Продукція > TOSHIBA SEMICONDUCTOR AND STORAGE > Всі товари виробника TOSHIBA SEMICONDUCTOR AND STORAGE (13496) > Сторінка 225 з 225
| Фото | Назва | Виробник | Інформація |
Доступність |
Ціна |
||||||||||||||||||
|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|
|
DF2S6M5SL,L3F | Toshiba Semiconductor and Storage |
Description: TVS DIODE 5VWM 17VC SL2Packaging: Tape & Reel (TR) Package / Case: 2-SMD, No Lead Mounting Type: Surface Mount Type: Zener Operating Temperature: 150°C (TJ) Applications: General Purpose Capacitance @ Frequency: 0.6pF @ 1MHz Current - Peak Pulse (10/1000µs): 2.5A (8/20µs) Voltage - Reverse Standoff (Typ): 5V (Max) Supplier Device Package: SL2 Unidirectional Channels: 1 Voltage - Breakdown (Min): 5.5V Voltage - Clamping (Max) @ Ipp: 17V (Typ) Power - Peak Pulse: 37W Power Line Protection: No |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||||||||||||
|
DF2S6M5SL,L3F | Toshiba Semiconductor and Storage |
Description: TVS DIODE 5VWM 17VC SL2Packaging: Cut Tape (CT) Package / Case: 2-SMD, No Lead Mounting Type: Surface Mount Type: Zener Operating Temperature: 150°C (TJ) Applications: General Purpose Capacitance @ Frequency: 0.6pF @ 1MHz Current - Peak Pulse (10/1000µs): 2.5A (8/20µs) Voltage - Reverse Standoff (Typ): 5V (Max) Supplier Device Package: SL2 Unidirectional Channels: 1 Voltage - Breakdown (Min): 5.5V Voltage - Clamping (Max) @ Ipp: 17V (Typ) Power - Peak Pulse: 37W Power Line Protection: No |
на замовлення 9678 шт: термін постачання 21-31 дні (днів) |
|
||||||||||||||||||
|
DF2S30ASL,L3F | Toshiba Semiconductor and Storage |
Description: TVS DIODE 23VWM 58VC SL2Packaging: Tape & Reel (TR) Package / Case: 2-SMD, No Lead Mounting Type: Surface Mount Type: Zener Operating Temperature: 150°C (TJ) Applications: General Purpose Capacitance @ Frequency: 7.5pF @ 1MHz Current - Peak Pulse (10/1000µs): 2.5A (8/20µs) Voltage - Reverse Standoff (Typ): 23V (Max) Supplier Device Package: SL2 Unidirectional Channels: 1 Voltage - Breakdown (Min): 28V Voltage - Clamping (Max) @ Ipp: 58V Power - Peak Pulse: 145W Power Line Protection: No |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||||||||||||
|
XCEZ13V,L3XHF | Toshiba Semiconductor and Storage |
Description: 13 V ZENER DIODE, SOD-523(ESC)Packaging: Tape & Reel (TR) Package / Case: SC-79, SOD-523 Mounting Type: Surface Mount Type: Zener Operating Temperature: 150°C (TJ) Capacitance @ Frequency: 42pF @ 1MHz Current - Peak Pulse (10/1000µs): 6.5A (8/20µs) Voltage - Reverse Standoff (Typ): 11V Supplier Device Package: ESC Unidirectional Channels: 1 Voltage - Breakdown (Min): 12.4V Voltage - Clamping (Max) @ Ipp: 27V Power - Peak Pulse: 200W Power Line Protection: No Grade: Automotive Qualification: AEC-Q101 |
на замовлення 16000 шт: термін постачання 21-31 дні (днів) |
|
||||||||||||||||||
|
XCEZ13V,L3XHF | Toshiba Semiconductor and Storage |
Description: 13 V ZENER DIODE, SOD-523(ESC)Packaging: Cut Tape (CT) Package / Case: SC-79, SOD-523 Mounting Type: Surface Mount Type: Zener Operating Temperature: 150°C (TJ) Capacitance @ Frequency: 42pF @ 1MHz Current - Peak Pulse (10/1000µs): 6.5A (8/20µs) Voltage - Reverse Standoff (Typ): 11V Supplier Device Package: ESC Unidirectional Channels: 1 Voltage - Breakdown (Min): 12.4V Voltage - Clamping (Max) @ Ipp: 27V Power - Peak Pulse: 200W Power Line Protection: No Grade: Automotive Qualification: AEC-Q101 |
на замовлення 16000 шт: термін постачання 21-31 дні (днів) |
|
||||||||||||||||||
|
XCEZ30V,L3XHF | Toshiba Semiconductor and Storage |
Description: 30 V ZENER DIODE, SOD-523(ESC)Packaging: Tape & Reel (TR) Package / Case: SC-79, SOD-523 Mounting Type: Surface Mount Type: Zener Operating Temperature: 150°C (TJ) Capacitance @ Frequency: 21pF @ 1MHz Current - Peak Pulse (10/1000µs): 4A (8/20µs) Voltage - Reverse Standoff (Typ): 27V Supplier Device Package: ESC Unidirectional Channels: 1 Voltage - Breakdown (Min): 28V Voltage - Clamping (Max) @ Ipp: 47.5V Power - Peak Pulse: 200W Power Line Protection: No Grade: Automotive Qualification: AEC-Q101 |
на замовлення 15890 шт: термін постачання 21-31 дні (днів) |
|
||||||||||||||||||
|
XCEZ30V,L3XHF | Toshiba Semiconductor and Storage |
Description: 30 V ZENER DIODE, SOD-523(ESC)Packaging: Cut Tape (CT) Package / Case: SC-79, SOD-523 Mounting Type: Surface Mount Type: Zener Operating Temperature: 150°C (TJ) Capacitance @ Frequency: 21pF @ 1MHz Current - Peak Pulse (10/1000µs): 4A (8/20µs) Voltage - Reverse Standoff (Typ): 27V Supplier Device Package: ESC Unidirectional Channels: 1 Voltage - Breakdown (Min): 28V Voltage - Clamping (Max) @ Ipp: 47.5V Power - Peak Pulse: 200W Power Line Protection: No Grade: Automotive Qualification: AEC-Q101 |
на замовлення 15890 шт: термін постачання 21-31 дні (днів) |
|
||||||||||||||||||
|
XCEZ22V,L3XHF | Toshiba Semiconductor and Storage |
Description: 22 V ZENER DIODE, SOD-523(ESC)Packaging: Tape & Reel (TR) Package / Case: SC-79, SOD-523 Mounting Type: Surface Mount Type: Zener Operating Temperature: 150°C (TJ) Capacitance @ Frequency: 27pF @ 1MHz Current - Peak Pulse (10/1000µs): 4.75A (8/20µs) Voltage - Reverse Standoff (Typ): 18V Supplier Device Package: ESC Unidirectional Channels: 1 Voltage - Breakdown (Min): 20.8V Voltage - Clamping (Max) @ Ipp: 32V Power - Peak Pulse: 200W Power Line Protection: No Grade: Automotive Qualification: AEC-Q101 |
на замовлення 15380 шт: термін постачання 21-31 дні (днів) |
|
||||||||||||||||||
|
XCEZ22V,L3XHF | Toshiba Semiconductor and Storage |
Description: 22 V ZENER DIODE, SOD-523(ESC)Packaging: Cut Tape (CT) Package / Case: SC-79, SOD-523 Mounting Type: Surface Mount Type: Zener Operating Temperature: 150°C (TJ) Capacitance @ Frequency: 27pF @ 1MHz Current - Peak Pulse (10/1000µs): 4.75A (8/20µs) Voltage - Reverse Standoff (Typ): 18V Supplier Device Package: ESC Unidirectional Channels: 1 Voltage - Breakdown (Min): 20.8V Voltage - Clamping (Max) @ Ipp: 32V Power - Peak Pulse: 200W Power Line Protection: No Grade: Automotive Qualification: AEC-Q101 |
на замовлення 15380 шт: термін постачання 21-31 дні (днів) |
|
||||||||||||||||||
|
XCEZ27V,L3XHF | Toshiba Semiconductor and Storage |
Description: 27 V ZENER DIODE, SOD-523(ESC) APackaging: Tape & Reel (TR) Package / Case: SC-79, SOD-523 Mounting Type: Surface Mount Type: Zener Operating Temperature: 150°C (TJ) Capacitance @ Frequency: 23pF @ 1MHz Current - Peak Pulse (10/1000µs): 4.1A (8/20µs) Voltage - Reverse Standoff (Typ): 23V (Max) Supplier Device Package: ESC Unidirectional Channels: 1 Voltage - Breakdown (Min): 25.1V Voltage - Clamping (Max) @ Ipp: 45V Power - Peak Pulse: 200W Power Line Protection: No Grade: Automotive Qualification: AEC-Q101 |
на замовлення 15900 шт: термін постачання 21-31 дні (днів) |
|
||||||||||||||||||
|
XCEZ27V,L3XHF | Toshiba Semiconductor and Storage |
Description: 27 V ZENER DIODE, SOD-523(ESC) APackaging: Cut Tape (CT) Package / Case: SC-79, SOD-523 Mounting Type: Surface Mount Type: Zener Operating Temperature: 150°C (TJ) Capacitance @ Frequency: 23pF @ 1MHz Current - Peak Pulse (10/1000µs): 4.1A (8/20µs) Voltage - Reverse Standoff (Typ): 23V (Max) Supplier Device Package: ESC Unidirectional Channels: 1 Voltage - Breakdown (Min): 25.1V Voltage - Clamping (Max) @ Ipp: 45V Power - Peak Pulse: 200W Power Line Protection: No Grade: Automotive Qualification: AEC-Q101 |
на замовлення 15900 шт: термін постачання 21-31 дні (днів) |
|
||||||||||||||||||
|
XCEZ16V,L3XHF | Toshiba Semiconductor and Storage |
Description: 16 V ZENER DIODE, SOD-523(ESC) APackaging: Tape & Reel (TR) Package / Case: SC-79, SOD-523 Mounting Type: Surface Mount Type: Zener Operating Temperature: 150°C (TJ) Capacitance @ Frequency: 35pF @ 1MHz Current - Peak Pulse (10/1000µs): 5.5A (8/20µs) Voltage - Reverse Standoff (Typ): 14V (Max) Supplier Device Package: ESC Unidirectional Channels: 1 Voltage - Breakdown (Min): 15.3V Voltage - Clamping (Max) @ Ipp: 27V Power - Peak Pulse: 200W Power Line Protection: No Grade: Automotive Qualification: AEC-Q101 |
на замовлення 15878 шт: термін постачання 21-31 дні (днів) |
|
||||||||||||||||||
|
XCEZ16V,L3XHF | Toshiba Semiconductor and Storage |
Description: 16 V ZENER DIODE, SOD-523(ESC) APackaging: Cut Tape (CT) Package / Case: SC-79, SOD-523 Mounting Type: Surface Mount Type: Zener Operating Temperature: 150°C (TJ) Capacitance @ Frequency: 35pF @ 1MHz Current - Peak Pulse (10/1000µs): 5.5A (8/20µs) Voltage - Reverse Standoff (Typ): 14V (Max) Supplier Device Package: ESC Unidirectional Channels: 1 Voltage - Breakdown (Min): 15.3V Voltage - Clamping (Max) @ Ipp: 27V Power - Peak Pulse: 200W Power Line Protection: No Grade: Automotive Qualification: AEC-Q101 |
на замовлення 15878 шт: термін постачання 21-31 дні (днів) |
|
||||||||||||||||||
|
XCEZ16V,H3XHF | Toshiba Semiconductor and Storage |
Description: 16 V ZENER DIODE, SOD-523(ESC)Packaging: Tape & Reel (TR) Package / Case: SC-79, SOD-523 Mounting Type: Surface Mount Type: Zener Operating Temperature: 150°C (TJ) Capacitance @ Frequency: 35pF @ 1MHz Current - Peak Pulse (10/1000µs): 5.5A (8/20µs) Voltage - Reverse Standoff (Typ): 14V (Max) Supplier Device Package: ESC Unidirectional Channels: 1 Voltage - Breakdown (Min): 15.3V Voltage - Clamping (Max) @ Ipp: 27V Power - Peak Pulse: 200W Power Line Protection: No Grade: Automotive Qualification: AEC-Q101 |
на замовлення 8000 шт: термін постачання 21-31 дні (днів) |
|
||||||||||||||||||
|
XCEZ16V,H3XHF | Toshiba Semiconductor and Storage |
Description: 16 V ZENER DIODE, SOD-523(ESC)Packaging: Cut Tape (CT) Package / Case: SC-79, SOD-523 Mounting Type: Surface Mount Type: Zener Operating Temperature: 150°C (TJ) Capacitance @ Frequency: 35pF @ 1MHz Current - Peak Pulse (10/1000µs): 5.5A (8/20µs) Voltage - Reverse Standoff (Typ): 14V (Max) Supplier Device Package: ESC Unidirectional Channels: 1 Voltage - Breakdown (Min): 15.3V Voltage - Clamping (Max) @ Ipp: 27V Power - Peak Pulse: 200W Power Line Protection: No Grade: Automotive Qualification: AEC-Q101 |
на замовлення 8000 шт: термін постачання 21-31 дні (днів) |
|
||||||||||||||||||
|
|
TLP621M(BLL-T1,E | Toshiba Semiconductor and Storage |
Description: TRANSISTOR OPTOCOUPLER; DC INPUTPackaging: Tape & Reel (TR) Package / Case: 4-DIP (0.300", 7.62mm) Output Type: Transistor Mounting Type: Through Hole Operating Temperature: -55°C ~ 125°C Voltage - Forward (Vf) (Typ): 1.25V Input Type: DC Current - Output / Channel: 50mA Voltage - Isolation: 5000Vrms Current Transfer Ratio (Min): 200% @ 500µA Vce Saturation (Max): 300mV Current Transfer Ratio (Max): 400% @ 500µA Supplier Device Package: 4-DIP Voltage - Output (Max): 80V Turn On / Turn Off Time (Typ): 3µs, 3µs Rise / Fall Time (Typ): 2µs, 3µs Number of Channels: 1 Current - DC Forward (If) (Max): 50 mA |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||||||||||||
|
|
TLP621M(D4B-T5,E | Toshiba Semiconductor and Storage |
Description: TRANSISTOR OPTOCOUPLER; DC INPUTPackaging: Tape & Reel (TR) Package / Case: 4-DIP (0.300", 7.62mm) Output Type: Transistor Mounting Type: Through Hole Operating Temperature: -55°C ~ 125°C Voltage - Forward (Vf) (Typ): 1.25V Input Type: DC Current - Output / Channel: 50mA Voltage - Isolation: 5000Vrms Current Transfer Ratio (Min): 50% @ 5mA Vce Saturation (Max): 300mV Current Transfer Ratio (Max): 600% @ 5mA Supplier Device Package: 4-DIP Voltage - Output (Max): 80V Turn On / Turn Off Time (Typ): 3µs, 3µs Rise / Fall Time (Typ): 2µs, 3µs Number of Channels: 1 Current - DC Forward (If) (Max): 50 mA |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||||||||||||
|
|
TLP621M(GRL-T5,E | Toshiba Semiconductor and Storage |
Description: TRANSISTOR OPTOCOUPLER; DC INPUTPackaging: Tape & Reel (TR) Package / Case: 4-DIP (0.300", 7.62mm) Output Type: Transistor Mounting Type: Through Hole Operating Temperature: -55°C ~ 125°C Voltage - Forward (Vf) (Typ): 1.25V Input Type: DC Current - Output / Channel: 50mA Voltage - Isolation: 5000Vrms Current Transfer Ratio (Min): 100% @ 500µA Vce Saturation (Max): 300mV Current Transfer Ratio (Max): 200% @ 500µA Supplier Device Package: 4-DIP Voltage - Output (Max): 80V Turn On / Turn Off Time (Typ): 3µs, 3µs Rise / Fall Time (Typ): 2µs, 3µs Number of Channels: 1 Current - DC Forward (If) (Max): 50 mA |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||||||||||||
|
TLP170AM(E | Toshiba Semiconductor and Storage |
Description: SSR RELAY SPST-NO 400MA 0-60VPackaging: Tube Package / Case: 6-SOIC (0.173", 4.40mm Width), 4 Leads Output Type: DC Mounting Type: Surface Mount Voltage - Input: 1.27VDC Circuit: SPST-NO (1 Form A) Operating Temperature: -55°C ~ 125°C Termination Style: Gull Wing Load Current: 700 mA Approval Agency: cUL, UL, VDE Relay Type: Photo-Coupled Relay (Photorelay) Supplier Device Package: 6-SOP Voltage - Load: 0 V ~ 60 V On-State Resistance (Max): 300 mOhms |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||||||||||||
|
TC78B043FTG(O,EL) | Toshiba Semiconductor and Storage |
Description: 25V/MA 3-PHASE BLDC SINUSOIDALPackaging: Tape & Reel (TR) Package / Case: 20-WFQFN Exposed Pad Mounting Type: Surface Mount Function: Controller - Speed Interface: PWM, SPI Operating Temperature: -40°C ~ 115°C Output Configuration: Half Bridge (3) Voltage - Supply: 6V ~ 23V Applications: Fan Controller Technology: NMOS Voltage - Load: 6V ~ 23V Supplier Device Package: 20-WQFN (3x3) Motor Type - AC, DC: Brushless DC (BLDC) |
на замовлення 4000 шт: термін постачання 21-31 дні (днів) |
|
||||||||||||||||||
|
TC78B043FTG(O,EL) | Toshiba Semiconductor and Storage |
Description: 25V/MA 3-PHASE BLDC SINUSOIDALPackaging: Cut Tape (CT) Package / Case: 20-WFQFN Exposed Pad Mounting Type: Surface Mount Function: Controller - Speed Interface: PWM, SPI Operating Temperature: -40°C ~ 115°C Output Configuration: Half Bridge (3) Voltage - Supply: 6V ~ 23V Applications: Fan Controller Technology: NMOS Voltage - Load: 6V ~ 23V Supplier Device Package: 20-WQFN (3x3) Motor Type - AC, DC: Brushless DC (BLDC) |
на замовлення 4000 шт: термін постачання 21-31 дні (днів) |
|
||||||||||||||||||
|
TC78B043FNG(O,EL) | Toshiba Semiconductor and Storage |
Description: 25V/MA 3-PHASE BLDC SINUSOIDALPackaging: Tape & Reel (TR) Package / Case: 28-TSSOP (0.173", 4.40mm Width) Exposed Pad Mounting Type: Surface Mount Function: Controller - Speed Interface: PWM, SPI Operating Temperature: -40°C ~ 115°C Output Configuration: Half Bridge (3) Voltage - Supply: 6V ~ 23V Applications: Fan Controller Technology: NMOS Voltage - Load: 6V ~ 23V Supplier Device Package: 28-HTSSOP Motor Type - AC, DC: Brushless DC (BLDC) |
на замовлення 4000 шт: термін постачання 21-31 дні (днів) |
|
||||||||||||||||||
|
TC78B043FNG(O,EL) | Toshiba Semiconductor and Storage |
Description: 25V/MA 3-PHASE BLDC SINUSOIDALPackaging: Cut Tape (CT) Package / Case: 28-TSSOP (0.173", 4.40mm Width) Exposed Pad Mounting Type: Surface Mount Function: Controller - Speed Interface: PWM, SPI Operating Temperature: -40°C ~ 115°C Output Configuration: Half Bridge (3) Voltage - Supply: 6V ~ 23V Applications: Fan Controller Technology: NMOS Voltage - Load: 6V ~ 23V Supplier Device Package: 28-HTSSOP Motor Type - AC, DC: Brushless DC (BLDC) |
на замовлення 4000 шт: термін постачання 21-31 дні (днів) |
|
||||||||||||||||||
|
TK095U65Z5,RQ | Toshiba Semiconductor and Storage |
Description: N-CH MOSFET, 650 V, 0.095 @10V,Packaging: Tape & Reel (TR) Package / Case: 8-PowerSFN Mounting Type: Surface Mount Operating Temperature: 150°C Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 29A (Ta) Rds On (Max) @ Id, Vgs: 95mOhm @ 14.5A, 10V Power Dissipation (Max): 230W (Tc) Vgs(th) (Max) @ Id: 4.5V @ 1.27mA Supplier Device Package: TOLL Drive Voltage (Max Rds On, Min Rds On): 10V Vgs (Max): ±30V Drain to Source Voltage (Vdss): 650 V Gate Charge (Qg) (Max) @ Vgs: 50 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 2880 pF @ 300 V |
на замовлення 4000 шт: термін постачання 21-31 дні (днів) |
|
||||||||||||||||||
|
TK095U65Z5,RQ | Toshiba Semiconductor and Storage |
Description: N-CH MOSFET, 650 V, 0.095 @10V,Packaging: Cut Tape (CT) Package / Case: 8-PowerSFN Mounting Type: Surface Mount Operating Temperature: 150°C Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 29A (Ta) Rds On (Max) @ Id, Vgs: 95mOhm @ 14.5A, 10V Power Dissipation (Max): 230W (Tc) Vgs(th) (Max) @ Id: 4.5V @ 1.27mA Supplier Device Package: TOLL Drive Voltage (Max Rds On, Min Rds On): 10V Vgs (Max): ±30V Drain to Source Voltage (Vdss): 650 V Gate Charge (Qg) (Max) @ Vgs: 50 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 2880 pF @ 300 V |
на замовлення 4000 шт: термін постачання 21-31 дні (днів) |
|
||||||||||||||||||
|
TK115A65Z5,S4X | Toshiba Semiconductor and Storage |
Description: N-CH MOSFET, 650 V, 0.115 @10V,Packaging: Tube Package / Case: TO-220-3 Full Pack Mounting Type: Through Hole Operating Temperature: 150°C Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 24A (Ta) Rds On (Max) @ Id, Vgs: 115mOhm @ 12A, 10V Power Dissipation (Max): 45W (Tc) Vgs(th) (Max) @ Id: 4.5V @ 1.02mA Supplier Device Package: TO-220SIS Drive Voltage (Max Rds On, Min Rds On): 10V Vgs (Max): ±30V Drain to Source Voltage (Vdss): 650 V Gate Charge (Qg) (Max) @ Vgs: 42 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 2280 pF @ 300 V |
на замовлення 90 шт: термін постачання 21-31 дні (днів) |
|
||||||||||||||||||
|
CMZB18A,LQ | Toshiba Semiconductor and Storage |
Description: 18 V ZENER DIODE, M-FLATTolerance: ±5% Packaging: Tape & Reel (TR) Package / Case: SOD-128 Mounting Type: Surface Mount Operating Temperature: 150°C (TJ) Voltage - Zener (Nom) (Vz): 18 V Impedance (Max) (Zzt): 20 Ohms Supplier Device Package: M-FLAT (2.4x3.8) Power - Max: 1 W Voltage - Forward (Vf) (Max) @ If: 1.2 V @ 200 mA Current - Reverse Leakage @ Vr: 500 nA @ 13 V |
на замовлення 3000 шт: термін постачання 21-31 дні (днів) |
|
||||||||||||||||||
|
CMZB18A,LQ | Toshiba Semiconductor and Storage |
Description: 18 V ZENER DIODE, M-FLATTolerance: ±5% Packaging: Cut Tape (CT) Package / Case: SOD-128 Mounting Type: Surface Mount Operating Temperature: 150°C (TJ) Voltage - Zener (Nom) (Vz): 18 V Impedance (Max) (Zzt): 20 Ohms Supplier Device Package: M-FLAT (2.4x3.8) Power - Max: 1 W Voltage - Forward (Vf) (Max) @ If: 1.2 V @ 200 mA Current - Reverse Leakage @ Vr: 500 nA @ 13 V |
на замовлення 5990 шт: термін постачання 21-31 дні (днів) |
|
||||||||||||||||||
|
TLP175A(V4-TPL,E | Toshiba Semiconductor and Storage |
Description: PHOTORELAY; LOW CURRENT TRIGGER;Packaging: Tape & Reel (TR) Package / Case: 6-SOIC (0.173", 4.40mm Width), 4 Leads Output Type: AC, DC Mounting Type: Surface Mount Voltage - Input: 1.27VDC Circuit: SPST-NO (1 Form A) Operating Temperature: -40°C ~ 85°C Load Current: 100 mA Relay Type: Photo-Coupled Relay (Photorelay) Supplier Device Package: 6-SOP Voltage - Load: 0 V ~ 60 V On-State Resistance (Max): 50 Ohms |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||||||||||||
|
TB67H453FTG(O,EL) | Toshiba Semiconductor and Storage |
Description: 50V 3.5A BRUSHED MOTOR DRIVER ICPackaging: Tape & Reel (TR) Package / Case: 16-VFQFN Exposed Pad Mounting Type: Surface Mount Function: Driver - Fully Integrated, Control and Power Stage Current - Output: 3.5A Operating Temperature: -40°C ~ 150°C (TJ) Output Configuration: Half Bridge (2) Voltage - Supply: 4.5V ~ 44V Applications: General Purpose Technology: NMOS Voltage - Load: 4.5V ~ 44V Supplier Device Package: 16-VQFN (3x3) Motor Type - AC, DC: Brushed DC |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||||||||||||
|
TB67H453FTG(O,EL) | Toshiba Semiconductor and Storage |
Description: 50V 3.5A BRUSHED MOTOR DRIVER ICPackaging: Cut Tape (CT) Package / Case: 16-VFQFN Exposed Pad Mounting Type: Surface Mount Function: Driver - Fully Integrated, Control and Power Stage Current - Output: 3.5A Operating Temperature: -40°C ~ 150°C (TJ) Output Configuration: Half Bridge (2) Voltage - Supply: 4.5V ~ 44V Applications: General Purpose Technology: NMOS Voltage - Load: 4.5V ~ 44V Supplier Device Package: 16-VQFN (3x3) Motor Type - AC, DC: Brushed DC |
на замовлення 2312 шт: термін постачання 21-31 дні (днів) |
|
||||||||||||||||||
|
TK155A60Z1,S4X | Toshiba Semiconductor and Storage |
Description: N-CH MOSFET, 600 V, 0.155 @10V,Packaging: Tube Package / Case: TO-220-3 Full Pack Mounting Type: Through Hole Operating Temperature: 150°C Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 17A (Ta) Rds On (Max) @ Id, Vgs: 155mOhm @ 5.4A, 10V Power Dissipation (Max): 40W (Tc) Vgs(th) (Max) @ Id: 4V @ 610µA Supplier Device Package: TO-220SIS Drive Voltage (Max Rds On, Min Rds On): 10V Vgs (Max): ±30V Drain to Source Voltage (Vdss): 600 V Gate Charge (Qg) (Max) @ Vgs: 24 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 1350 pF @ 300 V |
на замовлення 50 шт: термін постачання 21-31 дні (днів) |
|
||||||||||||||||||
|
RN2107MFV,L3XHF(CT | Toshiba Semiconductor and Storage |
Description: TRANS PREBIAS PNP 50V 0.1A VESMPackaging: Tape & Reel (TR) Package / Case: SOT-723 Mounting Type: Surface Mount Transistor Type: PNP - Pre-Biased Vce Saturation (Max) @ Ib, Ic: 300mV @ 500µA, 5mA Current - Collector Cutoff (Max): 500nA DC Current Gain (hFE) (Min) @ Ic, Vce: 80 @ 10mA, 5V Supplier Device Package: VESM Grade: Automotive Current - Collector (Ic) (Max): 100 mA Voltage - Collector Emitter Breakdown (Max): 50 V Power - Max: 150 mW Resistor - Base (R1): 10 kOhms Resistor - Emitter Base (R2): 47 kOhms Qualification: AEC-Q101 Resistors Included: R1 and R2 |
на замовлення 8000 шт: термін постачання 21-31 дні (днів) |
|
||||||||||||||||||
|
RN2107MFV,L3XHF(CT | Toshiba Semiconductor and Storage |
Description: TRANS PREBIAS PNP 50V 0.1A VESMPackaging: Cut Tape (CT) Package / Case: SOT-723 Mounting Type: Surface Mount Transistor Type: PNP - Pre-Biased Vce Saturation (Max) @ Ib, Ic: 300mV @ 500µA, 5mA Current - Collector Cutoff (Max): 500nA DC Current Gain (hFE) (Min) @ Ic, Vce: 80 @ 10mA, 5V Supplier Device Package: VESM Grade: Automotive Current - Collector (Ic) (Max): 100 mA Voltage - Collector Emitter Breakdown (Max): 50 V Power - Max: 150 mW Resistor - Base (R1): 10 kOhms Resistor - Emitter Base (R2): 47 kOhms Qualification: AEC-Q101 Resistors Included: R1 and R2 |
на замовлення 8000 шт: термін постачання 21-31 дні (днів) |
|
||||||||||||||||||
|
RN2107,LXHF(CT | Toshiba Semiconductor and Storage |
Description: TRANS PREBIAS PNP 50V 0.1A SSMPackaging: Tape & Reel (TR) Package / Case: SC-75, SOT-416 Mounting Type: Surface Mount Transistor Type: PNP - Pre-Biased Vce Saturation (Max) @ Ib, Ic: 300mV @ 250µA, 5mA Current - Collector Cutoff (Max): 500nA DC Current Gain (hFE) (Min) @ Ic, Vce: 80 @ 10mA, 5V Supplier Device Package: SSM Grade: Automotive Current - Collector (Ic) (Max): 100 mA Voltage - Collector Emitter Breakdown (Max): 50 V Power - Max: 100 mW Frequency - Transition: 200 MHz Resistor - Base (R1): 10 kOhms Resistor - Emitter Base (R2): 47 kOhms Qualification: AEC-Q101 Resistors Included: R1 and R2 |
на замовлення 3000 шт: термін постачання 21-31 дні (днів) |
|
||||||||||||||||||
|
RN2107,LXHF(CT | Toshiba Semiconductor and Storage |
Description: TRANS PREBIAS PNP 50V 0.1A SSMPackaging: Cut Tape (CT) Package / Case: SC-75, SOT-416 Mounting Type: Surface Mount Transistor Type: PNP - Pre-Biased Vce Saturation (Max) @ Ib, Ic: 300mV @ 250µA, 5mA Current - Collector Cutoff (Max): 500nA DC Current Gain (hFE) (Min) @ Ic, Vce: 80 @ 10mA, 5V Supplier Device Package: SSM Grade: Automotive Current - Collector (Ic) (Max): 100 mA Voltage - Collector Emitter Breakdown (Max): 50 V Power - Max: 100 mW Frequency - Transition: 200 MHz Resistor - Base (R1): 10 kOhms Resistor - Emitter Base (R2): 47 kOhms Qualification: AEC-Q101 Resistors Included: R1 and R2 |
на замовлення 5870 шт: термін постачання 21-31 дні (днів) |
|
||||||||||||||||||
|
TK125A60Z1,S4X | Toshiba Semiconductor and Storage |
Description: N-CH MOSFET, 600 V, 0.125 @10V,Packaging: Tube Package / Case: TO-220-3 Full Pack Mounting Type: Through Hole Operating Temperature: 150°C Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 20A (Ta) Rds On (Max) @ Id, Vgs: 125mOhm @ 6A, 10V Power Dissipation (Max): 40W (Tc) Vgs(th) (Max) @ Id: 4V @ 730µA Supplier Device Package: TO-220SIS Drive Voltage (Max Rds On, Min Rds On): 10V Vgs (Max): ±30V Drain to Source Voltage (Vdss): 600 V Gate Charge (Qg) (Max) @ Vgs: 28 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 1620 pF @ 300 V |
на замовлення 88 шт: термін постачання 21-31 дні (днів) |
|
||||||||||||||||||
|
CMH07(TE12L,Q,M) | Toshiba Semiconductor and Storage |
Description: DIODE STANDARD 200V 2A MFLATPackaging: Tape & Reel (TR) Package / Case: SOD-128 Mounting Type: Surface Mount Speed: Fast Recovery =< 500ns, > 200mA (Io) Reverse Recovery Time (trr): 100 ns Technology: Standard Current - Average Rectified (Io): 2A Supplier Device Package: M-FLAT (2.4x3.8) Operating Temperature - Junction: -40°C ~ 150°C Voltage - DC Reverse (Vr) (Max): 200 V Voltage - Forward (Vf) (Max) @ If: 980 mV @ 2 A Current - Reverse Leakage @ Vr: 10 µA @ 200 V |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||||||||||||
|
CMH07(TE12L,Q,M) | Toshiba Semiconductor and Storage |
Description: DIODE STANDARD 200V 2A MFLATPackaging: Cut Tape (CT) Package / Case: SOD-128 Mounting Type: Surface Mount Speed: Fast Recovery =< 500ns, > 200mA (Io) Reverse Recovery Time (trr): 100 ns Technology: Standard Current - Average Rectified (Io): 2A Supplier Device Package: M-FLAT (2.4x3.8) Operating Temperature - Junction: -40°C ~ 150°C Voltage - DC Reverse (Vr) (Max): 200 V Voltage - Forward (Vf) (Max) @ If: 980 mV @ 2 A Current - Reverse Leakage @ Vr: 10 µA @ 200 V |
на замовлення 2355 шт: термін постачання 21-31 дні (днів) |
|
||||||||||||||||||
|
2SK4037(TE12L,Q) | Toshiba Semiconductor and Storage |
Description: MOSFET N-CH PW-XPackaging: Tape & Reel (TR) Package / Case: SC-70, SOT-323 Current Rating (Amps): 3A Frequency: 470MHz Configuration: N-Channel Power - Output: 36.5dBmW Gain: 11.5dB Technology: MOSFET (Metal Oxide) Supplier Device Package: SC-70 Voltage - Rated: 12 V Voltage - Test: 6 V Current - Test: 250 mA |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||||||||||||
|
TK25S06N1L,LQ | Toshiba Semiconductor and Storage |
Description: MOSFET N-CH 60V 25A DPAKPackaging: Tape & Reel (TR) Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63 Mounting Type: Surface Mount Operating Temperature: 175°C Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 25A (Ta) Rds On (Max) @ Id, Vgs: 18.5mOhm @ 12.5A, 10V Power Dissipation (Max): 57W (Tc) Vgs(th) (Max) @ Id: 2.5V @ 100µA Supplier Device Package: DPAK+ Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 60 V Gate Charge (Qg) (Max) @ Vgs: 15 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 855 pF @ 10 V |
на замовлення 2000 шт: термін постачання 21-31 дні (днів) |
|
||||||||||||||||||
|
TK25S06N1L,LQ | Toshiba Semiconductor and Storage |
Description: MOSFET N-CH 60V 25A DPAKPackaging: Cut Tape (CT) Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63 Mounting Type: Surface Mount Operating Temperature: 175°C Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 25A (Ta) Rds On (Max) @ Id, Vgs: 18.5mOhm @ 12.5A, 10V Power Dissipation (Max): 57W (Tc) Vgs(th) (Max) @ Id: 2.5V @ 100µA Supplier Device Package: DPAK+ Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 60 V Gate Charge (Qg) (Max) @ Vgs: 15 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 855 pF @ 10 V |
на замовлення 3058 шт: термін постачання 21-31 дні (днів) |
|
||||||||||||||||||
|
XCEZ5V6,L3XHF | Toshiba Semiconductor and Storage |
Description: TVS DIODE 3.5VWM 9VC ESCPackaging: Tape & Reel (TR) Package / Case: SC-79, SOD-523 Mounting Type: Surface Mount Type: Zener Operating Temperature: 150°C (TJ) Capacitance @ Frequency: 125pF @ 1MHz Current - Peak Pulse (10/1000µs): 12A (8/20µs) Voltage - Reverse Standoff (Typ): 3.5V Supplier Device Package: ESC Unidirectional Channels: 1 Voltage - Breakdown (Min): 5.3V Voltage - Clamping (Max) @ Ipp: 9V Power - Peak Pulse: 155W Power Line Protection: No Grade: Automotive Qualification: AEC-Q101 |
на замовлення 8000 шт: термін постачання 21-31 дні (днів) |
|
||||||||||||||||||
|
XCEZ5V6,L3XHF | Toshiba Semiconductor and Storage |
Description: TVS DIODE 3.5VWM 9VC ESCPackaging: Cut Tape (CT) Package / Case: SC-79, SOD-523 Mounting Type: Surface Mount Type: Zener Operating Temperature: 150°C (TJ) Capacitance @ Frequency: 125pF @ 1MHz Current - Peak Pulse (10/1000µs): 12A (8/20µs) Voltage - Reverse Standoff (Typ): 3.5V Supplier Device Package: ESC Unidirectional Channels: 1 Voltage - Breakdown (Min): 5.3V Voltage - Clamping (Max) @ Ipp: 9V Power - Peak Pulse: 155W Power Line Protection: No Grade: Automotive Qualification: AEC-Q101 |
на замовлення 15480 шт: термін постачання 21-31 дні (днів) |
|
||||||||||||||||||
|
CEZ5V6,H3F | Toshiba Semiconductor and Storage |
Description: 5.6 V ZENER DIODE, SOD-523(ESC)Packaging: Tape & Reel (TR) Package / Case: SC-79, SOD-523 Mounting Type: Surface Mount Type: Zener Operating Temperature: 150°C (TJ) Applications: General Purpose Capacitance @ Frequency: 125pF @ 1MHz Current - Peak Pulse (10/1000µs): 12A (8/20µs) Voltage - Reverse Standoff (Typ): 3.5V (Max) Supplier Device Package: ESC Unidirectional Channels: 1 Voltage - Breakdown (Min): 5.3V Voltage - Clamping (Max) @ Ipp: 9V Power - Peak Pulse: 155W Power Line Protection: No |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||||||||||||
|
TC4066BFELNF | Toshiba Semiconductor and Storage |
Description: IC BILATERAL SWITCH 1X1:1 14-SOP Packaging: Cut Tape (CT) Package / Case: 14-SOIC (0.209", 5.30mm Width) Mounting Type: Surface Mount Circuit: 1 x 1:1 Type: Bilateral, FET Switches Operating Temperature: -40°C ~ 85°C Voltage - Supply: 3V ~ 18V Independent Circuits: 4 Voltage Supply Source: Dual Supply Supplier Device Package: 14-SOP |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||||||||||||
|
TCR3LM12A,RF | Toshiba Semiconductor and Storage |
Description: OUTPUT LDO REGULATOR 300 MA FIXEPackaging: Tape & Reel (TR) Package / Case: 4-XDFN Exposed Pad Output Type: Fixed Mounting Type: Surface Mount Current - Output: 300mA Operating Temperature: -40°C ~ 85°C Output Configuration: Positive Current - Quiescent (Iq): 2.2 µA Voltage - Input (Max): 5.5V Number of Regulators: 1 Supplier Device Package: 4-DFN (1x1) Voltage - Output (Min/Fixed): 1.2V Control Features: Enable PSRR: 74dB ~ 43dB (100Hz ~ 100kHz) Protection Features: Over Current, Over Temperature |
на замовлення 10000 шт: термін постачання 21-31 дні (днів) |
|
||||||||||||||||||
|
TCR3LM12A,RF | Toshiba Semiconductor and Storage |
Description: OUTPUT LDO REGULATOR 300 MA FIXEPackaging: Cut Tape (CT) Package / Case: 4-XDFN Exposed Pad Output Type: Fixed Mounting Type: Surface Mount Current - Output: 300mA Operating Temperature: -40°C ~ 85°C Output Configuration: Positive Current - Quiescent (Iq): 2.2 µA Voltage - Input (Max): 5.5V Number of Regulators: 1 Supplier Device Package: 4-DFN (1x1) Voltage - Output (Min/Fixed): 1.2V Control Features: Enable PSRR: 74dB ~ 43dB (100Hz ~ 100kHz) Protection Features: Over Current, Over Temperature |
на замовлення 10000 шт: термін постачання 21-31 дні (днів) |
|
||||||||||||||||||
|
CUZ68V,H3F | Toshiba Semiconductor and Storage |
Description: 68 V ZENER DIODE, SOD-323 SOD-32Packaging: Tape & Reel (TR) Package / Case: SC-76, SOD-323 Mounting Type: Surface Mount Type: Zener Operating Temperature: 150°C (TJ) Applications: General Purpose Capacitance @ Frequency: 25pF @ 1MHz Current - Peak Pulse (10/1000µs): 5A (8/20µs) Voltage - Reverse Standoff (Typ): 60V (Max) Supplier Device Package: USC Unidirectional Channels: 1 Voltage - Breakdown (Min): 64V Voltage - Clamping (Max) @ Ipp: 115V Power - Peak Pulse: 620W Power Line Protection: No |
на замовлення 3000 шт: термін постачання 21-31 дні (днів) |
|
||||||||||||||||||
|
CUZ68V,H3F | Toshiba Semiconductor and Storage |
Description: 68 V ZENER DIODE, SOD-323 SOD-32Packaging: Cut Tape (CT) Package / Case: SC-76, SOD-323 Mounting Type: Surface Mount Type: Zener Operating Temperature: 150°C (TJ) Applications: General Purpose Capacitance @ Frequency: 25pF @ 1MHz Current - Peak Pulse (10/1000µs): 5A (8/20µs) Voltage - Reverse Standoff (Typ): 60V (Max) Supplier Device Package: USC Unidirectional Channels: 1 Voltage - Breakdown (Min): 64V Voltage - Clamping (Max) @ Ipp: 115V Power - Peak Pulse: 620W Power Line Protection: No |
на замовлення 3000 шт: термін постачання 21-31 дні (днів) |
|
||||||||||||||||||
|
TC74HC4538AF-ELF | Toshiba Semiconductor and Storage |
Description: IC MMV 2-CIR 25-NS 14-SOP Packaging: Cut Tape (CT) Package / Case: 14-SOIC (0.209", 5.30mm Width) Mounting Type: Surface Mount Logic Type: Monostable Operating Temperature: -40°C ~ 85°C Propagation Delay: 25 ns Independent Circuits: 2 Current - Output High, Low: 5.2mA, 5.2mA Schmitt Trigger Input: Yes Supplier Device Package: 14-SOP Voltage - Supply: 2 V ~ 6 V |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||||||||||||
|
TCR3DM45,LF(SE | Toshiba Semiconductor and Storage |
Description: IC REG LINEAR 4.5V 300MA 4-DFNPackaging: Tape & Reel (TR) Package / Case: 4-UDFN Exposed Pad Output Type: Fixed Mounting Type: Surface Mount Current - Output: 300mA Operating Temperature: -40°C ~ 85°C Output Configuration: Positive Current - Quiescent (Iq): 125 µA Voltage - Input (Max): 5.5V Number of Regulators: 1 Supplier Device Package: 4-DFN (1x1) Voltage - Output (Min/Fixed): 4.5V Control Features: Enable Voltage Dropout (Max): 0.2V @ 300mA Protection Features: Over Current, Over Temperature |
на замовлення 30000 шт: термін постачання 21-31 дні (днів) |
|
||||||||||||||||||
|
TCR3DM45,LF(SE | Toshiba Semiconductor and Storage |
Description: IC REG LINEAR 4.5V 300MA 4-DFNPackaging: Cut Tape (CT) Package / Case: 4-UDFN Exposed Pad Output Type: Fixed Mounting Type: Surface Mount Current - Output: 300mA Operating Temperature: -40°C ~ 85°C Output Configuration: Positive Current - Quiescent (Iq): 125 µA Voltage - Input (Max): 5.5V Number of Regulators: 1 Supplier Device Package: 4-DFN (1x1) Voltage - Output (Min/Fixed): 4.5V Control Features: Enable Voltage Dropout (Max): 0.2V @ 300mA Protection Features: Over Current, Over Temperature |
на замовлення 30000 шт: термін постачання 21-31 дні (днів) |
|
||||||||||||||||||
| 2SC5738(TE85L,F) | Toshiba Semiconductor and Storage |
Description: NPN BIPOLAR TRANSISTOR, 20 V, 3.Packaging: Tape & Reel (TR) Package / Case: TO-236-3, SC-59, SOT-23-3 Mounting Type: Surface Mount Transistor Type: NPN Operating Temperature: 150°C (TJ) Vce Saturation (Max) @ Ib, Ic: 150mV @ 32mA, 1.6A Current - Collector Cutoff (Max): 100nA (ICBO) DC Current Gain (hFE) (Min) @ Ic, Vce: 400 @ 500mA, 2V Supplier Device Package: TSM Current - Collector (Ic) (Max): 3.5 A Voltage - Collector Emitter Breakdown (Max): 20 V Power - Max: 625 mW |
товару немає в наявності |
В кошику од. на суму грн. | |||||||||||||||||||
|
XSM6J372NW,LXHF | Toshiba Semiconductor and Storage |
Description: P-CH MOSFET, -30 V, -6.0 A, 0.04Packaging: Tape & Reel (TR) Package / Case: 6-UDFN Exposed Pad Mounting Type: Surface Mount, Wettable Flank Operating Temperature: 150°C Technology: MOSFET (Metal Oxide) FET Type: P-Channel Current - Continuous Drain (Id) @ 25°C: 6A (Ta) Rds On (Max) @ Id, Vgs: 42mOhm @ 4A, 10V Power Dissipation (Max): 1.51W (Ta) Vgs(th) (Max) @ Id: 1.2V @ 1mA Supplier Device Package: DFN2020B Drive Voltage (Max Rds On, Min Rds On): 1.8V, 10V Vgs (Max): +6V, -12V Drain to Source Voltage (Vdss): 30 V Gate Charge (Qg) (Max) @ Vgs: 8.2 nC @ 4.5 V Input Capacitance (Ciss) (Max) @ Vds: 560 pF @ 15 V |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||||||||||||
|
XSM6J372NW,LXHF | Toshiba Semiconductor and Storage |
Description: P-CH MOSFET, -30 V, -6.0 A, 0.04Packaging: Cut Tape (CT) Package / Case: 6-UDFN Exposed Pad Mounting Type: Surface Mount, Wettable Flank Operating Temperature: 150°C Technology: MOSFET (Metal Oxide) FET Type: P-Channel Current - Continuous Drain (Id) @ 25°C: 6A (Ta) Rds On (Max) @ Id, Vgs: 42mOhm @ 4A, 10V Power Dissipation (Max): 1.51W (Ta) Vgs(th) (Max) @ Id: 1.2V @ 1mA Supplier Device Package: DFN2020B Drive Voltage (Max Rds On, Min Rds On): 1.8V, 10V Vgs (Max): +6V, -12V Drain to Source Voltage (Vdss): 30 V Gate Charge (Qg) (Max) @ Vgs: 8.2 nC @ 4.5 V Input Capacitance (Ciss) (Max) @ Vds: 560 pF @ 15 V |
товару немає в наявності |
В кошику од. на суму грн. |
| DF2S6M5SL,L3F |
![]() |
Виробник: Toshiba Semiconductor and Storage
Description: TVS DIODE 5VWM 17VC SL2
Packaging: Tape & Reel (TR)
Package / Case: 2-SMD, No Lead
Mounting Type: Surface Mount
Type: Zener
Operating Temperature: 150°C (TJ)
Applications: General Purpose
Capacitance @ Frequency: 0.6pF @ 1MHz
Current - Peak Pulse (10/1000µs): 2.5A (8/20µs)
Voltage - Reverse Standoff (Typ): 5V (Max)
Supplier Device Package: SL2
Unidirectional Channels: 1
Voltage - Breakdown (Min): 5.5V
Voltage - Clamping (Max) @ Ipp: 17V (Typ)
Power - Peak Pulse: 37W
Power Line Protection: No
Description: TVS DIODE 5VWM 17VC SL2
Packaging: Tape & Reel (TR)
Package / Case: 2-SMD, No Lead
Mounting Type: Surface Mount
Type: Zener
Operating Temperature: 150°C (TJ)
Applications: General Purpose
Capacitance @ Frequency: 0.6pF @ 1MHz
Current - Peak Pulse (10/1000µs): 2.5A (8/20µs)
Voltage - Reverse Standoff (Typ): 5V (Max)
Supplier Device Package: SL2
Unidirectional Channels: 1
Voltage - Breakdown (Min): 5.5V
Voltage - Clamping (Max) @ Ipp: 17V (Typ)
Power - Peak Pulse: 37W
Power Line Protection: No
товару немає в наявності
В кошику
од. на суму грн.
| DF2S6M5SL,L3F |
![]() |
Виробник: Toshiba Semiconductor and Storage
Description: TVS DIODE 5VWM 17VC SL2
Packaging: Cut Tape (CT)
Package / Case: 2-SMD, No Lead
Mounting Type: Surface Mount
Type: Zener
Operating Temperature: 150°C (TJ)
Applications: General Purpose
Capacitance @ Frequency: 0.6pF @ 1MHz
Current - Peak Pulse (10/1000µs): 2.5A (8/20µs)
Voltage - Reverse Standoff (Typ): 5V (Max)
Supplier Device Package: SL2
Unidirectional Channels: 1
Voltage - Breakdown (Min): 5.5V
Voltage - Clamping (Max) @ Ipp: 17V (Typ)
Power - Peak Pulse: 37W
Power Line Protection: No
Description: TVS DIODE 5VWM 17VC SL2
Packaging: Cut Tape (CT)
Package / Case: 2-SMD, No Lead
Mounting Type: Surface Mount
Type: Zener
Operating Temperature: 150°C (TJ)
Applications: General Purpose
Capacitance @ Frequency: 0.6pF @ 1MHz
Current - Peak Pulse (10/1000µs): 2.5A (8/20µs)
Voltage - Reverse Standoff (Typ): 5V (Max)
Supplier Device Package: SL2
Unidirectional Channels: 1
Voltage - Breakdown (Min): 5.5V
Voltage - Clamping (Max) @ Ipp: 17V (Typ)
Power - Peak Pulse: 37W
Power Line Protection: No
на замовлення 9678 шт:
термін постачання 21-31 дні (днів)| Кількість | Ціна |
|---|---|
| 40+ | 8.58 грн |
| 55+ | 6.11 грн |
| 101+ | 3.28 грн |
| 500+ | 2.81 грн |
| 1000+ | 2.68 грн |
| 2000+ | 2.64 грн |
| 5000+ | 2.57 грн |
| DF2S30ASL,L3F |
![]() |
Виробник: Toshiba Semiconductor and Storage
Description: TVS DIODE 23VWM 58VC SL2
Packaging: Tape & Reel (TR)
Package / Case: 2-SMD, No Lead
Mounting Type: Surface Mount
Type: Zener
Operating Temperature: 150°C (TJ)
Applications: General Purpose
Capacitance @ Frequency: 7.5pF @ 1MHz
Current - Peak Pulse (10/1000µs): 2.5A (8/20µs)
Voltage - Reverse Standoff (Typ): 23V (Max)
Supplier Device Package: SL2
Unidirectional Channels: 1
Voltage - Breakdown (Min): 28V
Voltage - Clamping (Max) @ Ipp: 58V
Power - Peak Pulse: 145W
Power Line Protection: No
Description: TVS DIODE 23VWM 58VC SL2
Packaging: Tape & Reel (TR)
Package / Case: 2-SMD, No Lead
Mounting Type: Surface Mount
Type: Zener
Operating Temperature: 150°C (TJ)
Applications: General Purpose
Capacitance @ Frequency: 7.5pF @ 1MHz
Current - Peak Pulse (10/1000µs): 2.5A (8/20µs)
Voltage - Reverse Standoff (Typ): 23V (Max)
Supplier Device Package: SL2
Unidirectional Channels: 1
Voltage - Breakdown (Min): 28V
Voltage - Clamping (Max) @ Ipp: 58V
Power - Peak Pulse: 145W
Power Line Protection: No
товару немає в наявності
В кошику
од. на суму грн.
| XCEZ13V,L3XHF |
![]() |
Виробник: Toshiba Semiconductor and Storage
Description: 13 V ZENER DIODE, SOD-523(ESC)
Packaging: Tape & Reel (TR)
Package / Case: SC-79, SOD-523
Mounting Type: Surface Mount
Type: Zener
Operating Temperature: 150°C (TJ)
Capacitance @ Frequency: 42pF @ 1MHz
Current - Peak Pulse (10/1000µs): 6.5A (8/20µs)
Voltage - Reverse Standoff (Typ): 11V
Supplier Device Package: ESC
Unidirectional Channels: 1
Voltage - Breakdown (Min): 12.4V
Voltage - Clamping (Max) @ Ipp: 27V
Power - Peak Pulse: 200W
Power Line Protection: No
Grade: Automotive
Qualification: AEC-Q101
Description: 13 V ZENER DIODE, SOD-523(ESC)
Packaging: Tape & Reel (TR)
Package / Case: SC-79, SOD-523
Mounting Type: Surface Mount
Type: Zener
Operating Temperature: 150°C (TJ)
Capacitance @ Frequency: 42pF @ 1MHz
Current - Peak Pulse (10/1000µs): 6.5A (8/20µs)
Voltage - Reverse Standoff (Typ): 11V
Supplier Device Package: ESC
Unidirectional Channels: 1
Voltage - Breakdown (Min): 12.4V
Voltage - Clamping (Max) @ Ipp: 27V
Power - Peak Pulse: 200W
Power Line Protection: No
Grade: Automotive
Qualification: AEC-Q101
на замовлення 16000 шт:
термін постачання 21-31 дні (днів)| Кількість | Ціна |
|---|---|
| 8000+ | 1.75 грн |
| 16000+ | 1.64 грн |
| XCEZ13V,L3XHF |
![]() |
Виробник: Toshiba Semiconductor and Storage
Description: 13 V ZENER DIODE, SOD-523(ESC)
Packaging: Cut Tape (CT)
Package / Case: SC-79, SOD-523
Mounting Type: Surface Mount
Type: Zener
Operating Temperature: 150°C (TJ)
Capacitance @ Frequency: 42pF @ 1MHz
Current - Peak Pulse (10/1000µs): 6.5A (8/20µs)
Voltage - Reverse Standoff (Typ): 11V
Supplier Device Package: ESC
Unidirectional Channels: 1
Voltage - Breakdown (Min): 12.4V
Voltage - Clamping (Max) @ Ipp: 27V
Power - Peak Pulse: 200W
Power Line Protection: No
Grade: Automotive
Qualification: AEC-Q101
Description: 13 V ZENER DIODE, SOD-523(ESC)
Packaging: Cut Tape (CT)
Package / Case: SC-79, SOD-523
Mounting Type: Surface Mount
Type: Zener
Operating Temperature: 150°C (TJ)
Capacitance @ Frequency: 42pF @ 1MHz
Current - Peak Pulse (10/1000µs): 6.5A (8/20µs)
Voltage - Reverse Standoff (Typ): 11V
Supplier Device Package: ESC
Unidirectional Channels: 1
Voltage - Breakdown (Min): 12.4V
Voltage - Clamping (Max) @ Ipp: 27V
Power - Peak Pulse: 200W
Power Line Protection: No
Grade: Automotive
Qualification: AEC-Q101
на замовлення 16000 шт:
термін постачання 21-31 дні (днів)| Кількість | Ціна |
|---|---|
| 45+ | 7.72 грн |
| 98+ | 3.39 грн |
| 115+ | 2.87 грн |
| 137+ | 2.26 грн |
| 250+ | 2.05 грн |
| 500+ | 1.92 грн |
| 1000+ | 1.78 грн |
| 2500+ | 1.67 грн |
| XCEZ30V,L3XHF |
![]() |
Виробник: Toshiba Semiconductor and Storage
Description: 30 V ZENER DIODE, SOD-523(ESC)
Packaging: Tape & Reel (TR)
Package / Case: SC-79, SOD-523
Mounting Type: Surface Mount
Type: Zener
Operating Temperature: 150°C (TJ)
Capacitance @ Frequency: 21pF @ 1MHz
Current - Peak Pulse (10/1000µs): 4A (8/20µs)
Voltage - Reverse Standoff (Typ): 27V
Supplier Device Package: ESC
Unidirectional Channels: 1
Voltage - Breakdown (Min): 28V
Voltage - Clamping (Max) @ Ipp: 47.5V
Power - Peak Pulse: 200W
Power Line Protection: No
Grade: Automotive
Qualification: AEC-Q101
Description: 30 V ZENER DIODE, SOD-523(ESC)
Packaging: Tape & Reel (TR)
Package / Case: SC-79, SOD-523
Mounting Type: Surface Mount
Type: Zener
Operating Temperature: 150°C (TJ)
Capacitance @ Frequency: 21pF @ 1MHz
Current - Peak Pulse (10/1000µs): 4A (8/20µs)
Voltage - Reverse Standoff (Typ): 27V
Supplier Device Package: ESC
Unidirectional Channels: 1
Voltage - Breakdown (Min): 28V
Voltage - Clamping (Max) @ Ipp: 47.5V
Power - Peak Pulse: 200W
Power Line Protection: No
Grade: Automotive
Qualification: AEC-Q101
на замовлення 15890 шт:
термін постачання 21-31 дні (днів)| Кількість | Ціна |
|---|---|
| 8000+ | 1.75 грн |
| XCEZ30V,L3XHF |
![]() |
Виробник: Toshiba Semiconductor and Storage
Description: 30 V ZENER DIODE, SOD-523(ESC)
Packaging: Cut Tape (CT)
Package / Case: SC-79, SOD-523
Mounting Type: Surface Mount
Type: Zener
Operating Temperature: 150°C (TJ)
Capacitance @ Frequency: 21pF @ 1MHz
Current - Peak Pulse (10/1000µs): 4A (8/20µs)
Voltage - Reverse Standoff (Typ): 27V
Supplier Device Package: ESC
Unidirectional Channels: 1
Voltage - Breakdown (Min): 28V
Voltage - Clamping (Max) @ Ipp: 47.5V
Power - Peak Pulse: 200W
Power Line Protection: No
Grade: Automotive
Qualification: AEC-Q101
Description: 30 V ZENER DIODE, SOD-523(ESC)
Packaging: Cut Tape (CT)
Package / Case: SC-79, SOD-523
Mounting Type: Surface Mount
Type: Zener
Operating Temperature: 150°C (TJ)
Capacitance @ Frequency: 21pF @ 1MHz
Current - Peak Pulse (10/1000µs): 4A (8/20µs)
Voltage - Reverse Standoff (Typ): 27V
Supplier Device Package: ESC
Unidirectional Channels: 1
Voltage - Breakdown (Min): 28V
Voltage - Clamping (Max) @ Ipp: 47.5V
Power - Peak Pulse: 200W
Power Line Protection: No
Grade: Automotive
Qualification: AEC-Q101
на замовлення 15890 шт:
термін постачання 21-31 дні (днів)| Кількість | Ціна |
|---|---|
| 45+ | 7.72 грн |
| 98+ | 3.39 грн |
| 115+ | 2.87 грн |
| 137+ | 2.26 грн |
| 250+ | 2.05 грн |
| 500+ | 1.92 грн |
| 1000+ | 1.78 грн |
| 2500+ | 1.67 грн |
| XCEZ22V,L3XHF |
![]() |
Виробник: Toshiba Semiconductor and Storage
Description: 22 V ZENER DIODE, SOD-523(ESC)
Packaging: Tape & Reel (TR)
Package / Case: SC-79, SOD-523
Mounting Type: Surface Mount
Type: Zener
Operating Temperature: 150°C (TJ)
Capacitance @ Frequency: 27pF @ 1MHz
Current - Peak Pulse (10/1000µs): 4.75A (8/20µs)
Voltage - Reverse Standoff (Typ): 18V
Supplier Device Package: ESC
Unidirectional Channels: 1
Voltage - Breakdown (Min): 20.8V
Voltage - Clamping (Max) @ Ipp: 32V
Power - Peak Pulse: 200W
Power Line Protection: No
Grade: Automotive
Qualification: AEC-Q101
Description: 22 V ZENER DIODE, SOD-523(ESC)
Packaging: Tape & Reel (TR)
Package / Case: SC-79, SOD-523
Mounting Type: Surface Mount
Type: Zener
Operating Temperature: 150°C (TJ)
Capacitance @ Frequency: 27pF @ 1MHz
Current - Peak Pulse (10/1000µs): 4.75A (8/20µs)
Voltage - Reverse Standoff (Typ): 18V
Supplier Device Package: ESC
Unidirectional Channels: 1
Voltage - Breakdown (Min): 20.8V
Voltage - Clamping (Max) @ Ipp: 32V
Power - Peak Pulse: 200W
Power Line Protection: No
Grade: Automotive
Qualification: AEC-Q101
на замовлення 15380 шт:
термін постачання 21-31 дні (днів)| Кількість | Ціна |
|---|---|
| 8000+ | 1.75 грн |
| XCEZ22V,L3XHF |
![]() |
Виробник: Toshiba Semiconductor and Storage
Description: 22 V ZENER DIODE, SOD-523(ESC)
Packaging: Cut Tape (CT)
Package / Case: SC-79, SOD-523
Mounting Type: Surface Mount
Type: Zener
Operating Temperature: 150°C (TJ)
Capacitance @ Frequency: 27pF @ 1MHz
Current - Peak Pulse (10/1000µs): 4.75A (8/20µs)
Voltage - Reverse Standoff (Typ): 18V
Supplier Device Package: ESC
Unidirectional Channels: 1
Voltage - Breakdown (Min): 20.8V
Voltage - Clamping (Max) @ Ipp: 32V
Power - Peak Pulse: 200W
Power Line Protection: No
Grade: Automotive
Qualification: AEC-Q101
Description: 22 V ZENER DIODE, SOD-523(ESC)
Packaging: Cut Tape (CT)
Package / Case: SC-79, SOD-523
Mounting Type: Surface Mount
Type: Zener
Operating Temperature: 150°C (TJ)
Capacitance @ Frequency: 27pF @ 1MHz
Current - Peak Pulse (10/1000µs): 4.75A (8/20µs)
Voltage - Reverse Standoff (Typ): 18V
Supplier Device Package: ESC
Unidirectional Channels: 1
Voltage - Breakdown (Min): 20.8V
Voltage - Clamping (Max) @ Ipp: 32V
Power - Peak Pulse: 200W
Power Line Protection: No
Grade: Automotive
Qualification: AEC-Q101
на замовлення 15380 шт:
термін постачання 21-31 дні (днів)| Кількість | Ціна |
|---|---|
| 45+ | 7.72 грн |
| 98+ | 3.39 грн |
| 115+ | 2.87 грн |
| 137+ | 2.26 грн |
| 250+ | 2.05 грн |
| 500+ | 1.92 грн |
| 1000+ | 1.78 грн |
| 2500+ | 1.67 грн |
| XCEZ27V,L3XHF |
![]() |
Виробник: Toshiba Semiconductor and Storage
Description: 27 V ZENER DIODE, SOD-523(ESC) A
Packaging: Tape & Reel (TR)
Package / Case: SC-79, SOD-523
Mounting Type: Surface Mount
Type: Zener
Operating Temperature: 150°C (TJ)
Capacitance @ Frequency: 23pF @ 1MHz
Current - Peak Pulse (10/1000µs): 4.1A (8/20µs)
Voltage - Reverse Standoff (Typ): 23V (Max)
Supplier Device Package: ESC
Unidirectional Channels: 1
Voltage - Breakdown (Min): 25.1V
Voltage - Clamping (Max) @ Ipp: 45V
Power - Peak Pulse: 200W
Power Line Protection: No
Grade: Automotive
Qualification: AEC-Q101
Description: 27 V ZENER DIODE, SOD-523(ESC) A
Packaging: Tape & Reel (TR)
Package / Case: SC-79, SOD-523
Mounting Type: Surface Mount
Type: Zener
Operating Temperature: 150°C (TJ)
Capacitance @ Frequency: 23pF @ 1MHz
Current - Peak Pulse (10/1000µs): 4.1A (8/20µs)
Voltage - Reverse Standoff (Typ): 23V (Max)
Supplier Device Package: ESC
Unidirectional Channels: 1
Voltage - Breakdown (Min): 25.1V
Voltage - Clamping (Max) @ Ipp: 45V
Power - Peak Pulse: 200W
Power Line Protection: No
Grade: Automotive
Qualification: AEC-Q101
на замовлення 15900 шт:
термін постачання 21-31 дні (днів)| Кількість | Ціна |
|---|---|
| 8000+ | 2.36 грн |
| XCEZ27V,L3XHF |
![]() |
Виробник: Toshiba Semiconductor and Storage
Description: 27 V ZENER DIODE, SOD-523(ESC) A
Packaging: Cut Tape (CT)
Package / Case: SC-79, SOD-523
Mounting Type: Surface Mount
Type: Zener
Operating Temperature: 150°C (TJ)
Capacitance @ Frequency: 23pF @ 1MHz
Current - Peak Pulse (10/1000µs): 4.1A (8/20µs)
Voltage - Reverse Standoff (Typ): 23V (Max)
Supplier Device Package: ESC
Unidirectional Channels: 1
Voltage - Breakdown (Min): 25.1V
Voltage - Clamping (Max) @ Ipp: 45V
Power - Peak Pulse: 200W
Power Line Protection: No
Grade: Automotive
Qualification: AEC-Q101
Description: 27 V ZENER DIODE, SOD-523(ESC) A
Packaging: Cut Tape (CT)
Package / Case: SC-79, SOD-523
Mounting Type: Surface Mount
Type: Zener
Operating Temperature: 150°C (TJ)
Capacitance @ Frequency: 23pF @ 1MHz
Current - Peak Pulse (10/1000µs): 4.1A (8/20µs)
Voltage - Reverse Standoff (Typ): 23V (Max)
Supplier Device Package: ESC
Unidirectional Channels: 1
Voltage - Breakdown (Min): 25.1V
Voltage - Clamping (Max) @ Ipp: 45V
Power - Peak Pulse: 200W
Power Line Protection: No
Grade: Automotive
Qualification: AEC-Q101
на замовлення 15900 шт:
термін постачання 21-31 дні (днів)| Кількість | Ціна |
|---|---|
| 25+ | 13.72 грн |
| 40+ | 8.42 грн |
| 100+ | 5.21 грн |
| 500+ | 3.56 грн |
| 1000+ | 3.13 грн |
| 2000+ | 2.77 грн |
| XCEZ16V,L3XHF |
![]() |
Виробник: Toshiba Semiconductor and Storage
Description: 16 V ZENER DIODE, SOD-523(ESC) A
Packaging: Tape & Reel (TR)
Package / Case: SC-79, SOD-523
Mounting Type: Surface Mount
Type: Zener
Operating Temperature: 150°C (TJ)
Capacitance @ Frequency: 35pF @ 1MHz
Current - Peak Pulse (10/1000µs): 5.5A (8/20µs)
Voltage - Reverse Standoff (Typ): 14V (Max)
Supplier Device Package: ESC
Unidirectional Channels: 1
Voltage - Breakdown (Min): 15.3V
Voltage - Clamping (Max) @ Ipp: 27V
Power - Peak Pulse: 200W
Power Line Protection: No
Grade: Automotive
Qualification: AEC-Q101
Description: 16 V ZENER DIODE, SOD-523(ESC) A
Packaging: Tape & Reel (TR)
Package / Case: SC-79, SOD-523
Mounting Type: Surface Mount
Type: Zener
Operating Temperature: 150°C (TJ)
Capacitance @ Frequency: 35pF @ 1MHz
Current - Peak Pulse (10/1000µs): 5.5A (8/20µs)
Voltage - Reverse Standoff (Typ): 14V (Max)
Supplier Device Package: ESC
Unidirectional Channels: 1
Voltage - Breakdown (Min): 15.3V
Voltage - Clamping (Max) @ Ipp: 27V
Power - Peak Pulse: 200W
Power Line Protection: No
Grade: Automotive
Qualification: AEC-Q101
на замовлення 15878 шт:
термін постачання 21-31 дні (днів)| Кількість | Ціна |
|---|---|
| 8000+ | 2.37 грн |
| XCEZ16V,L3XHF |
![]() |
Виробник: Toshiba Semiconductor and Storage
Description: 16 V ZENER DIODE, SOD-523(ESC) A
Packaging: Cut Tape (CT)
Package / Case: SC-79, SOD-523
Mounting Type: Surface Mount
Type: Zener
Operating Temperature: 150°C (TJ)
Capacitance @ Frequency: 35pF @ 1MHz
Current - Peak Pulse (10/1000µs): 5.5A (8/20µs)
Voltage - Reverse Standoff (Typ): 14V (Max)
Supplier Device Package: ESC
Unidirectional Channels: 1
Voltage - Breakdown (Min): 15.3V
Voltage - Clamping (Max) @ Ipp: 27V
Power - Peak Pulse: 200W
Power Line Protection: No
Grade: Automotive
Qualification: AEC-Q101
Description: 16 V ZENER DIODE, SOD-523(ESC) A
Packaging: Cut Tape (CT)
Package / Case: SC-79, SOD-523
Mounting Type: Surface Mount
Type: Zener
Operating Temperature: 150°C (TJ)
Capacitance @ Frequency: 35pF @ 1MHz
Current - Peak Pulse (10/1000µs): 5.5A (8/20µs)
Voltage - Reverse Standoff (Typ): 14V (Max)
Supplier Device Package: ESC
Unidirectional Channels: 1
Voltage - Breakdown (Min): 15.3V
Voltage - Clamping (Max) @ Ipp: 27V
Power - Peak Pulse: 200W
Power Line Protection: No
Grade: Automotive
Qualification: AEC-Q101
на замовлення 15878 шт:
термін постачання 21-31 дні (днів)| Кількість | Ціна |
|---|---|
| 24+ | 14.58 грн |
| 32+ | 10.32 грн |
| 100+ | 6.57 грн |
| 500+ | 3.75 грн |
| 1000+ | 3.15 грн |
| 2000+ | 2.95 грн |
| XCEZ16V,H3XHF |
![]() |
Виробник: Toshiba Semiconductor and Storage
Description: 16 V ZENER DIODE, SOD-523(ESC)
Packaging: Tape & Reel (TR)
Package / Case: SC-79, SOD-523
Mounting Type: Surface Mount
Type: Zener
Operating Temperature: 150°C (TJ)
Capacitance @ Frequency: 35pF @ 1MHz
Current - Peak Pulse (10/1000µs): 5.5A (8/20µs)
Voltage - Reverse Standoff (Typ): 14V (Max)
Supplier Device Package: ESC
Unidirectional Channels: 1
Voltage - Breakdown (Min): 15.3V
Voltage - Clamping (Max) @ Ipp: 27V
Power - Peak Pulse: 200W
Power Line Protection: No
Grade: Automotive
Qualification: AEC-Q101
Description: 16 V ZENER DIODE, SOD-523(ESC)
Packaging: Tape & Reel (TR)
Package / Case: SC-79, SOD-523
Mounting Type: Surface Mount
Type: Zener
Operating Temperature: 150°C (TJ)
Capacitance @ Frequency: 35pF @ 1MHz
Current - Peak Pulse (10/1000µs): 5.5A (8/20µs)
Voltage - Reverse Standoff (Typ): 14V (Max)
Supplier Device Package: ESC
Unidirectional Channels: 1
Voltage - Breakdown (Min): 15.3V
Voltage - Clamping (Max) @ Ipp: 27V
Power - Peak Pulse: 200W
Power Line Protection: No
Grade: Automotive
Qualification: AEC-Q101
на замовлення 8000 шт:
термін постачання 21-31 дні (днів)| Кількість | Ціна |
|---|---|
| 4000+ | 3.51 грн |
| 8000+ | 3.04 грн |
| XCEZ16V,H3XHF |
![]() |
Виробник: Toshiba Semiconductor and Storage
Description: 16 V ZENER DIODE, SOD-523(ESC)
Packaging: Cut Tape (CT)
Package / Case: SC-79, SOD-523
Mounting Type: Surface Mount
Type: Zener
Operating Temperature: 150°C (TJ)
Capacitance @ Frequency: 35pF @ 1MHz
Current - Peak Pulse (10/1000µs): 5.5A (8/20µs)
Voltage - Reverse Standoff (Typ): 14V (Max)
Supplier Device Package: ESC
Unidirectional Channels: 1
Voltage - Breakdown (Min): 15.3V
Voltage - Clamping (Max) @ Ipp: 27V
Power - Peak Pulse: 200W
Power Line Protection: No
Grade: Automotive
Qualification: AEC-Q101
Description: 16 V ZENER DIODE, SOD-523(ESC)
Packaging: Cut Tape (CT)
Package / Case: SC-79, SOD-523
Mounting Type: Surface Mount
Type: Zener
Operating Temperature: 150°C (TJ)
Capacitance @ Frequency: 35pF @ 1MHz
Current - Peak Pulse (10/1000µs): 5.5A (8/20µs)
Voltage - Reverse Standoff (Typ): 14V (Max)
Supplier Device Package: ESC
Unidirectional Channels: 1
Voltage - Breakdown (Min): 15.3V
Voltage - Clamping (Max) @ Ipp: 27V
Power - Peak Pulse: 200W
Power Line Protection: No
Grade: Automotive
Qualification: AEC-Q101
на замовлення 8000 шт:
термін постачання 21-31 дні (днів)| Кількість | Ціна |
|---|---|
| 19+ | 18.87 грн |
| 31+ | 10.90 грн |
| 100+ | 6.79 грн |
| 500+ | 4.68 грн |
| 1000+ | 4.13 грн |
| 2000+ | 3.66 грн |
| TLP621M(BLL-T1,E |
![]() |
Виробник: Toshiba Semiconductor and Storage
Description: TRANSISTOR OPTOCOUPLER; DC INPUT
Packaging: Tape & Reel (TR)
Package / Case: 4-DIP (0.300", 7.62mm)
Output Type: Transistor
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 125°C
Voltage - Forward (Vf) (Typ): 1.25V
Input Type: DC
Current - Output / Channel: 50mA
Voltage - Isolation: 5000Vrms
Current Transfer Ratio (Min): 200% @ 500µA
Vce Saturation (Max): 300mV
Current Transfer Ratio (Max): 400% @ 500µA
Supplier Device Package: 4-DIP
Voltage - Output (Max): 80V
Turn On / Turn Off Time (Typ): 3µs, 3µs
Rise / Fall Time (Typ): 2µs, 3µs
Number of Channels: 1
Current - DC Forward (If) (Max): 50 mA
Description: TRANSISTOR OPTOCOUPLER; DC INPUT
Packaging: Tape & Reel (TR)
Package / Case: 4-DIP (0.300", 7.62mm)
Output Type: Transistor
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 125°C
Voltage - Forward (Vf) (Typ): 1.25V
Input Type: DC
Current - Output / Channel: 50mA
Voltage - Isolation: 5000Vrms
Current Transfer Ratio (Min): 200% @ 500µA
Vce Saturation (Max): 300mV
Current Transfer Ratio (Max): 400% @ 500µA
Supplier Device Package: 4-DIP
Voltage - Output (Max): 80V
Turn On / Turn Off Time (Typ): 3µs, 3µs
Rise / Fall Time (Typ): 2µs, 3µs
Number of Channels: 1
Current - DC Forward (If) (Max): 50 mA
товару немає в наявності
В кошику
од. на суму грн.
| TLP621M(D4B-T5,E |
![]() |
Виробник: Toshiba Semiconductor and Storage
Description: TRANSISTOR OPTOCOUPLER; DC INPUT
Packaging: Tape & Reel (TR)
Package / Case: 4-DIP (0.300", 7.62mm)
Output Type: Transistor
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 125°C
Voltage - Forward (Vf) (Typ): 1.25V
Input Type: DC
Current - Output / Channel: 50mA
Voltage - Isolation: 5000Vrms
Current Transfer Ratio (Min): 50% @ 5mA
Vce Saturation (Max): 300mV
Current Transfer Ratio (Max): 600% @ 5mA
Supplier Device Package: 4-DIP
Voltage - Output (Max): 80V
Turn On / Turn Off Time (Typ): 3µs, 3µs
Rise / Fall Time (Typ): 2µs, 3µs
Number of Channels: 1
Current - DC Forward (If) (Max): 50 mA
Description: TRANSISTOR OPTOCOUPLER; DC INPUT
Packaging: Tape & Reel (TR)
Package / Case: 4-DIP (0.300", 7.62mm)
Output Type: Transistor
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 125°C
Voltage - Forward (Vf) (Typ): 1.25V
Input Type: DC
Current - Output / Channel: 50mA
Voltage - Isolation: 5000Vrms
Current Transfer Ratio (Min): 50% @ 5mA
Vce Saturation (Max): 300mV
Current Transfer Ratio (Max): 600% @ 5mA
Supplier Device Package: 4-DIP
Voltage - Output (Max): 80V
Turn On / Turn Off Time (Typ): 3µs, 3µs
Rise / Fall Time (Typ): 2µs, 3µs
Number of Channels: 1
Current - DC Forward (If) (Max): 50 mA
товару немає в наявності
В кошику
од. на суму грн.
| TLP621M(GRL-T5,E |
![]() |
Виробник: Toshiba Semiconductor and Storage
Description: TRANSISTOR OPTOCOUPLER; DC INPUT
Packaging: Tape & Reel (TR)
Package / Case: 4-DIP (0.300", 7.62mm)
Output Type: Transistor
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 125°C
Voltage - Forward (Vf) (Typ): 1.25V
Input Type: DC
Current - Output / Channel: 50mA
Voltage - Isolation: 5000Vrms
Current Transfer Ratio (Min): 100% @ 500µA
Vce Saturation (Max): 300mV
Current Transfer Ratio (Max): 200% @ 500µA
Supplier Device Package: 4-DIP
Voltage - Output (Max): 80V
Turn On / Turn Off Time (Typ): 3µs, 3µs
Rise / Fall Time (Typ): 2µs, 3µs
Number of Channels: 1
Current - DC Forward (If) (Max): 50 mA
Description: TRANSISTOR OPTOCOUPLER; DC INPUT
Packaging: Tape & Reel (TR)
Package / Case: 4-DIP (0.300", 7.62mm)
Output Type: Transistor
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 125°C
Voltage - Forward (Vf) (Typ): 1.25V
Input Type: DC
Current - Output / Channel: 50mA
Voltage - Isolation: 5000Vrms
Current Transfer Ratio (Min): 100% @ 500µA
Vce Saturation (Max): 300mV
Current Transfer Ratio (Max): 200% @ 500µA
Supplier Device Package: 4-DIP
Voltage - Output (Max): 80V
Turn On / Turn Off Time (Typ): 3µs, 3µs
Rise / Fall Time (Typ): 2µs, 3µs
Number of Channels: 1
Current - DC Forward (If) (Max): 50 mA
товару немає в наявності
В кошику
од. на суму грн.
| TLP170AM(E |
![]() |
Виробник: Toshiba Semiconductor and Storage
Description: SSR RELAY SPST-NO 400MA 0-60V
Packaging: Tube
Package / Case: 6-SOIC (0.173", 4.40mm Width), 4 Leads
Output Type: DC
Mounting Type: Surface Mount
Voltage - Input: 1.27VDC
Circuit: SPST-NO (1 Form A)
Operating Temperature: -55°C ~ 125°C
Termination Style: Gull Wing
Load Current: 700 mA
Approval Agency: cUL, UL, VDE
Relay Type: Photo-Coupled Relay (Photorelay)
Supplier Device Package: 6-SOP
Voltage - Load: 0 V ~ 60 V
On-State Resistance (Max): 300 mOhms
Description: SSR RELAY SPST-NO 400MA 0-60V
Packaging: Tube
Package / Case: 6-SOIC (0.173", 4.40mm Width), 4 Leads
Output Type: DC
Mounting Type: Surface Mount
Voltage - Input: 1.27VDC
Circuit: SPST-NO (1 Form A)
Operating Temperature: -55°C ~ 125°C
Termination Style: Gull Wing
Load Current: 700 mA
Approval Agency: cUL, UL, VDE
Relay Type: Photo-Coupled Relay (Photorelay)
Supplier Device Package: 6-SOP
Voltage - Load: 0 V ~ 60 V
On-State Resistance (Max): 300 mOhms
товару немає в наявності
В кошику
од. на суму грн.
| TC78B043FTG(O,EL) |
![]() |
Виробник: Toshiba Semiconductor and Storage
Description: 25V/MA 3-PHASE BLDC SINUSOIDAL
Packaging: Tape & Reel (TR)
Package / Case: 20-WFQFN Exposed Pad
Mounting Type: Surface Mount
Function: Controller - Speed
Interface: PWM, SPI
Operating Temperature: -40°C ~ 115°C
Output Configuration: Half Bridge (3)
Voltage - Supply: 6V ~ 23V
Applications: Fan Controller
Technology: NMOS
Voltage - Load: 6V ~ 23V
Supplier Device Package: 20-WQFN (3x3)
Motor Type - AC, DC: Brushless DC (BLDC)
Description: 25V/MA 3-PHASE BLDC SINUSOIDAL
Packaging: Tape & Reel (TR)
Package / Case: 20-WFQFN Exposed Pad
Mounting Type: Surface Mount
Function: Controller - Speed
Interface: PWM, SPI
Operating Temperature: -40°C ~ 115°C
Output Configuration: Half Bridge (3)
Voltage - Supply: 6V ~ 23V
Applications: Fan Controller
Technology: NMOS
Voltage - Load: 6V ~ 23V
Supplier Device Package: 20-WQFN (3x3)
Motor Type - AC, DC: Brushless DC (BLDC)
на замовлення 4000 шт:
термін постачання 21-31 дні (днів)| Кількість | Ціна |
|---|---|
| 4000+ | 54.03 грн |
| TC78B043FTG(O,EL) |
![]() |
Виробник: Toshiba Semiconductor and Storage
Description: 25V/MA 3-PHASE BLDC SINUSOIDAL
Packaging: Cut Tape (CT)
Package / Case: 20-WFQFN Exposed Pad
Mounting Type: Surface Mount
Function: Controller - Speed
Interface: PWM, SPI
Operating Temperature: -40°C ~ 115°C
Output Configuration: Half Bridge (3)
Voltage - Supply: 6V ~ 23V
Applications: Fan Controller
Technology: NMOS
Voltage - Load: 6V ~ 23V
Supplier Device Package: 20-WQFN (3x3)
Motor Type - AC, DC: Brushless DC (BLDC)
Description: 25V/MA 3-PHASE BLDC SINUSOIDAL
Packaging: Cut Tape (CT)
Package / Case: 20-WFQFN Exposed Pad
Mounting Type: Surface Mount
Function: Controller - Speed
Interface: PWM, SPI
Operating Temperature: -40°C ~ 115°C
Output Configuration: Half Bridge (3)
Voltage - Supply: 6V ~ 23V
Applications: Fan Controller
Technology: NMOS
Voltage - Load: 6V ~ 23V
Supplier Device Package: 20-WQFN (3x3)
Motor Type - AC, DC: Brushless DC (BLDC)
на замовлення 4000 шт:
термін постачання 21-31 дні (днів)| Кількість | Ціна |
|---|---|
| 4+ | 111.49 грн |
| 10+ | 77.96 грн |
| 25+ | 70.73 грн |
| 100+ | 58.92 грн |
| 250+ | 55.37 грн |
| 500+ | 53.23 грн |
| 1000+ | 50.63 грн |
| TC78B043FNG(O,EL) |
![]() |
Виробник: Toshiba Semiconductor and Storage
Description: 25V/MA 3-PHASE BLDC SINUSOIDAL
Packaging: Tape & Reel (TR)
Package / Case: 28-TSSOP (0.173", 4.40mm Width) Exposed Pad
Mounting Type: Surface Mount
Function: Controller - Speed
Interface: PWM, SPI
Operating Temperature: -40°C ~ 115°C
Output Configuration: Half Bridge (3)
Voltage - Supply: 6V ~ 23V
Applications: Fan Controller
Technology: NMOS
Voltage - Load: 6V ~ 23V
Supplier Device Package: 28-HTSSOP
Motor Type - AC, DC: Brushless DC (BLDC)
Description: 25V/MA 3-PHASE BLDC SINUSOIDAL
Packaging: Tape & Reel (TR)
Package / Case: 28-TSSOP (0.173", 4.40mm Width) Exposed Pad
Mounting Type: Surface Mount
Function: Controller - Speed
Interface: PWM, SPI
Operating Temperature: -40°C ~ 115°C
Output Configuration: Half Bridge (3)
Voltage - Supply: 6V ~ 23V
Applications: Fan Controller
Technology: NMOS
Voltage - Load: 6V ~ 23V
Supplier Device Package: 28-HTSSOP
Motor Type - AC, DC: Brushless DC (BLDC)
на замовлення 4000 шт:
термін постачання 21-31 дні (днів)| Кількість | Ціна |
|---|---|
| 4000+ | 56.02 грн |
| TC78B043FNG(O,EL) |
![]() |
Виробник: Toshiba Semiconductor and Storage
Description: 25V/MA 3-PHASE BLDC SINUSOIDAL
Packaging: Cut Tape (CT)
Package / Case: 28-TSSOP (0.173", 4.40mm Width) Exposed Pad
Mounting Type: Surface Mount
Function: Controller - Speed
Interface: PWM, SPI
Operating Temperature: -40°C ~ 115°C
Output Configuration: Half Bridge (3)
Voltage - Supply: 6V ~ 23V
Applications: Fan Controller
Technology: NMOS
Voltage - Load: 6V ~ 23V
Supplier Device Package: 28-HTSSOP
Motor Type - AC, DC: Brushless DC (BLDC)
Description: 25V/MA 3-PHASE BLDC SINUSOIDAL
Packaging: Cut Tape (CT)
Package / Case: 28-TSSOP (0.173", 4.40mm Width) Exposed Pad
Mounting Type: Surface Mount
Function: Controller - Speed
Interface: PWM, SPI
Operating Temperature: -40°C ~ 115°C
Output Configuration: Half Bridge (3)
Voltage - Supply: 6V ~ 23V
Applications: Fan Controller
Technology: NMOS
Voltage - Load: 6V ~ 23V
Supplier Device Package: 28-HTSSOP
Motor Type - AC, DC: Brushless DC (BLDC)
на замовлення 4000 шт:
термін постачання 21-31 дні (днів)| Кількість | Ціна |
|---|---|
| 3+ | 114.92 грн |
| 10+ | 80.61 грн |
| 25+ | 73.17 грн |
| 100+ | 61.02 грн |
| 250+ | 57.37 грн |
| 500+ | 55.17 грн |
| 1000+ | 52.48 грн |
| TK095U65Z5,RQ |
![]() |
Виробник: Toshiba Semiconductor and Storage
Description: N-CH MOSFET, 650 V, 0.095 @10V,
Packaging: Tape & Reel (TR)
Package / Case: 8-PowerSFN
Mounting Type: Surface Mount
Operating Temperature: 150°C
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 29A (Ta)
Rds On (Max) @ Id, Vgs: 95mOhm @ 14.5A, 10V
Power Dissipation (Max): 230W (Tc)
Vgs(th) (Max) @ Id: 4.5V @ 1.27mA
Supplier Device Package: TOLL
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±30V
Drain to Source Voltage (Vdss): 650 V
Gate Charge (Qg) (Max) @ Vgs: 50 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 2880 pF @ 300 V
Description: N-CH MOSFET, 650 V, 0.095 @10V,
Packaging: Tape & Reel (TR)
Package / Case: 8-PowerSFN
Mounting Type: Surface Mount
Operating Temperature: 150°C
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 29A (Ta)
Rds On (Max) @ Id, Vgs: 95mOhm @ 14.5A, 10V
Power Dissipation (Max): 230W (Tc)
Vgs(th) (Max) @ Id: 4.5V @ 1.27mA
Supplier Device Package: TOLL
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±30V
Drain to Source Voltage (Vdss): 650 V
Gate Charge (Qg) (Max) @ Vgs: 50 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 2880 pF @ 300 V
на замовлення 4000 шт:
термін постачання 21-31 дні (днів)| Кількість | Ціна |
|---|---|
| 2000+ | 212.97 грн |
| TK095U65Z5,RQ |
![]() |
Виробник: Toshiba Semiconductor and Storage
Description: N-CH MOSFET, 650 V, 0.095 @10V,
Packaging: Cut Tape (CT)
Package / Case: 8-PowerSFN
Mounting Type: Surface Mount
Operating Temperature: 150°C
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 29A (Ta)
Rds On (Max) @ Id, Vgs: 95mOhm @ 14.5A, 10V
Power Dissipation (Max): 230W (Tc)
Vgs(th) (Max) @ Id: 4.5V @ 1.27mA
Supplier Device Package: TOLL
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±30V
Drain to Source Voltage (Vdss): 650 V
Gate Charge (Qg) (Max) @ Vgs: 50 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 2880 pF @ 300 V
Description: N-CH MOSFET, 650 V, 0.095 @10V,
Packaging: Cut Tape (CT)
Package / Case: 8-PowerSFN
Mounting Type: Surface Mount
Operating Temperature: 150°C
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 29A (Ta)
Rds On (Max) @ Id, Vgs: 95mOhm @ 14.5A, 10V
Power Dissipation (Max): 230W (Tc)
Vgs(th) (Max) @ Id: 4.5V @ 1.27mA
Supplier Device Package: TOLL
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±30V
Drain to Source Voltage (Vdss): 650 V
Gate Charge (Qg) (Max) @ Vgs: 50 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 2880 pF @ 300 V
на замовлення 4000 шт:
термін постачання 21-31 дні (днів)| Кількість | Ціна |
|---|---|
| 1+ | 518.88 грн |
| 10+ | 337.46 грн |
| 100+ | 251.02 грн |
| TK115A65Z5,S4X |
![]() |
Виробник: Toshiba Semiconductor and Storage
Description: N-CH MOSFET, 650 V, 0.115 @10V,
Packaging: Tube
Package / Case: TO-220-3 Full Pack
Mounting Type: Through Hole
Operating Temperature: 150°C
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 24A (Ta)
Rds On (Max) @ Id, Vgs: 115mOhm @ 12A, 10V
Power Dissipation (Max): 45W (Tc)
Vgs(th) (Max) @ Id: 4.5V @ 1.02mA
Supplier Device Package: TO-220SIS
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±30V
Drain to Source Voltage (Vdss): 650 V
Gate Charge (Qg) (Max) @ Vgs: 42 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 2280 pF @ 300 V
Description: N-CH MOSFET, 650 V, 0.115 @10V,
Packaging: Tube
Package / Case: TO-220-3 Full Pack
Mounting Type: Through Hole
Operating Temperature: 150°C
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 24A (Ta)
Rds On (Max) @ Id, Vgs: 115mOhm @ 12A, 10V
Power Dissipation (Max): 45W (Tc)
Vgs(th) (Max) @ Id: 4.5V @ 1.02mA
Supplier Device Package: TO-220SIS
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±30V
Drain to Source Voltage (Vdss): 650 V
Gate Charge (Qg) (Max) @ Vgs: 42 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 2280 pF @ 300 V
на замовлення 90 шт:
термін постачання 21-31 дні (днів)| Кількість | Ціна |
|---|---|
| 1+ | 441.69 грн |
| 50+ | 225.00 грн |
| CMZB18A,LQ |
![]() |
Виробник: Toshiba Semiconductor and Storage
Description: 18 V ZENER DIODE, M-FLAT
Tolerance: ±5%
Packaging: Tape & Reel (TR)
Package / Case: SOD-128
Mounting Type: Surface Mount
Operating Temperature: 150°C (TJ)
Voltage - Zener (Nom) (Vz): 18 V
Impedance (Max) (Zzt): 20 Ohms
Supplier Device Package: M-FLAT (2.4x3.8)
Power - Max: 1 W
Voltage - Forward (Vf) (Max) @ If: 1.2 V @ 200 mA
Current - Reverse Leakage @ Vr: 500 nA @ 13 V
Description: 18 V ZENER DIODE, M-FLAT
Tolerance: ±5%
Packaging: Tape & Reel (TR)
Package / Case: SOD-128
Mounting Type: Surface Mount
Operating Temperature: 150°C (TJ)
Voltage - Zener (Nom) (Vz): 18 V
Impedance (Max) (Zzt): 20 Ohms
Supplier Device Package: M-FLAT (2.4x3.8)
Power - Max: 1 W
Voltage - Forward (Vf) (Max) @ If: 1.2 V @ 200 mA
Current - Reverse Leakage @ Vr: 500 nA @ 13 V
на замовлення 3000 шт:
термін постачання 21-31 дні (днів)| Кількість | Ціна |
|---|---|
| 3000+ | 10.04 грн |
| CMZB18A,LQ |
![]() |
Виробник: Toshiba Semiconductor and Storage
Description: 18 V ZENER DIODE, M-FLAT
Tolerance: ±5%
Packaging: Cut Tape (CT)
Package / Case: SOD-128
Mounting Type: Surface Mount
Operating Temperature: 150°C (TJ)
Voltage - Zener (Nom) (Vz): 18 V
Impedance (Max) (Zzt): 20 Ohms
Supplier Device Package: M-FLAT (2.4x3.8)
Power - Max: 1 W
Voltage - Forward (Vf) (Max) @ If: 1.2 V @ 200 mA
Current - Reverse Leakage @ Vr: 500 nA @ 13 V
Description: 18 V ZENER DIODE, M-FLAT
Tolerance: ±5%
Packaging: Cut Tape (CT)
Package / Case: SOD-128
Mounting Type: Surface Mount
Operating Temperature: 150°C (TJ)
Voltage - Zener (Nom) (Vz): 18 V
Impedance (Max) (Zzt): 20 Ohms
Supplier Device Package: M-FLAT (2.4x3.8)
Power - Max: 1 W
Voltage - Forward (Vf) (Max) @ If: 1.2 V @ 200 mA
Current - Reverse Leakage @ Vr: 500 nA @ 13 V
на замовлення 5990 шт:
термін постачання 21-31 дні (днів)| Кількість | Ціна |
|---|---|
| 8+ | 45.46 грн |
| 13+ | 27.01 грн |
| 100+ | 17.28 грн |
| 500+ | 12.25 грн |
| 1000+ | 10.98 грн |
| TLP175A(V4-TPL,E |
![]() |
Виробник: Toshiba Semiconductor and Storage
Description: PHOTORELAY; LOW CURRENT TRIGGER;
Packaging: Tape & Reel (TR)
Package / Case: 6-SOIC (0.173", 4.40mm Width), 4 Leads
Output Type: AC, DC
Mounting Type: Surface Mount
Voltage - Input: 1.27VDC
Circuit: SPST-NO (1 Form A)
Operating Temperature: -40°C ~ 85°C
Load Current: 100 mA
Relay Type: Photo-Coupled Relay (Photorelay)
Supplier Device Package: 6-SOP
Voltage - Load: 0 V ~ 60 V
On-State Resistance (Max): 50 Ohms
Description: PHOTORELAY; LOW CURRENT TRIGGER;
Packaging: Tape & Reel (TR)
Package / Case: 6-SOIC (0.173", 4.40mm Width), 4 Leads
Output Type: AC, DC
Mounting Type: Surface Mount
Voltage - Input: 1.27VDC
Circuit: SPST-NO (1 Form A)
Operating Temperature: -40°C ~ 85°C
Load Current: 100 mA
Relay Type: Photo-Coupled Relay (Photorelay)
Supplier Device Package: 6-SOP
Voltage - Load: 0 V ~ 60 V
On-State Resistance (Max): 50 Ohms
товару немає в наявності
В кошику
од. на суму грн.
| TB67H453FTG(O,EL) |
![]() |
Виробник: Toshiba Semiconductor and Storage
Description: 50V 3.5A BRUSHED MOTOR DRIVER IC
Packaging: Tape & Reel (TR)
Package / Case: 16-VFQFN Exposed Pad
Mounting Type: Surface Mount
Function: Driver - Fully Integrated, Control and Power Stage
Current - Output: 3.5A
Operating Temperature: -40°C ~ 150°C (TJ)
Output Configuration: Half Bridge (2)
Voltage - Supply: 4.5V ~ 44V
Applications: General Purpose
Technology: NMOS
Voltage - Load: 4.5V ~ 44V
Supplier Device Package: 16-VQFN (3x3)
Motor Type - AC, DC: Brushed DC
Description: 50V 3.5A BRUSHED MOTOR DRIVER IC
Packaging: Tape & Reel (TR)
Package / Case: 16-VFQFN Exposed Pad
Mounting Type: Surface Mount
Function: Driver - Fully Integrated, Control and Power Stage
Current - Output: 3.5A
Operating Temperature: -40°C ~ 150°C (TJ)
Output Configuration: Half Bridge (2)
Voltage - Supply: 4.5V ~ 44V
Applications: General Purpose
Technology: NMOS
Voltage - Load: 4.5V ~ 44V
Supplier Device Package: 16-VQFN (3x3)
Motor Type - AC, DC: Brushed DC
товару немає в наявності
В кошику
од. на суму грн.
| TB67H453FTG(O,EL) |
![]() |
Виробник: Toshiba Semiconductor and Storage
Description: 50V 3.5A BRUSHED MOTOR DRIVER IC
Packaging: Cut Tape (CT)
Package / Case: 16-VFQFN Exposed Pad
Mounting Type: Surface Mount
Function: Driver - Fully Integrated, Control and Power Stage
Current - Output: 3.5A
Operating Temperature: -40°C ~ 150°C (TJ)
Output Configuration: Half Bridge (2)
Voltage - Supply: 4.5V ~ 44V
Applications: General Purpose
Technology: NMOS
Voltage - Load: 4.5V ~ 44V
Supplier Device Package: 16-VQFN (3x3)
Motor Type - AC, DC: Brushed DC
Description: 50V 3.5A BRUSHED MOTOR DRIVER IC
Packaging: Cut Tape (CT)
Package / Case: 16-VFQFN Exposed Pad
Mounting Type: Surface Mount
Function: Driver - Fully Integrated, Control and Power Stage
Current - Output: 3.5A
Operating Temperature: -40°C ~ 150°C (TJ)
Output Configuration: Half Bridge (2)
Voltage - Supply: 4.5V ~ 44V
Applications: General Purpose
Technology: NMOS
Voltage - Load: 4.5V ~ 44V
Supplier Device Package: 16-VQFN (3x3)
Motor Type - AC, DC: Brushed DC
на замовлення 2312 шт:
термін постачання 21-31 дні (днів)| Кількість | Ціна |
|---|---|
| 5+ | 77.19 грн |
| 10+ | 53.27 грн |
| 25+ | 48.10 грн |
| 100+ | 39.81 грн |
| 250+ | 37.26 грн |
| 500+ | 35.73 грн |
| 1000+ | 33.90 грн |
| TK155A60Z1,S4X |
![]() |
Виробник: Toshiba Semiconductor and Storage
Description: N-CH MOSFET, 600 V, 0.155 @10V,
Packaging: Tube
Package / Case: TO-220-3 Full Pack
Mounting Type: Through Hole
Operating Temperature: 150°C
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 17A (Ta)
Rds On (Max) @ Id, Vgs: 155mOhm @ 5.4A, 10V
Power Dissipation (Max): 40W (Tc)
Vgs(th) (Max) @ Id: 4V @ 610µA
Supplier Device Package: TO-220SIS
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±30V
Drain to Source Voltage (Vdss): 600 V
Gate Charge (Qg) (Max) @ Vgs: 24 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 1350 pF @ 300 V
Description: N-CH MOSFET, 600 V, 0.155 @10V,
Packaging: Tube
Package / Case: TO-220-3 Full Pack
Mounting Type: Through Hole
Operating Temperature: 150°C
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 17A (Ta)
Rds On (Max) @ Id, Vgs: 155mOhm @ 5.4A, 10V
Power Dissipation (Max): 40W (Tc)
Vgs(th) (Max) @ Id: 4V @ 610µA
Supplier Device Package: TO-220SIS
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±30V
Drain to Source Voltage (Vdss): 600 V
Gate Charge (Qg) (Max) @ Vgs: 24 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 1350 pF @ 300 V
на замовлення 50 шт:
термін постачання 21-31 дні (днів)| Кількість | Ціна |
|---|---|
| 2+ | 248.72 грн |
| 50+ | 120.40 грн |
| RN2107MFV,L3XHF(CT |
![]() |
Виробник: Toshiba Semiconductor and Storage
Description: TRANS PREBIAS PNP 50V 0.1A VESM
Packaging: Tape & Reel (TR)
Package / Case: SOT-723
Mounting Type: Surface Mount
Transistor Type: PNP - Pre-Biased
Vce Saturation (Max) @ Ib, Ic: 300mV @ 500µA, 5mA
Current - Collector Cutoff (Max): 500nA
DC Current Gain (hFE) (Min) @ Ic, Vce: 80 @ 10mA, 5V
Supplier Device Package: VESM
Grade: Automotive
Current - Collector (Ic) (Max): 100 mA
Voltage - Collector Emitter Breakdown (Max): 50 V
Power - Max: 150 mW
Resistor - Base (R1): 10 kOhms
Resistor - Emitter Base (R2): 47 kOhms
Qualification: AEC-Q101
Resistors Included: R1 and R2
Description: TRANS PREBIAS PNP 50V 0.1A VESM
Packaging: Tape & Reel (TR)
Package / Case: SOT-723
Mounting Type: Surface Mount
Transistor Type: PNP - Pre-Biased
Vce Saturation (Max) @ Ib, Ic: 300mV @ 500µA, 5mA
Current - Collector Cutoff (Max): 500nA
DC Current Gain (hFE) (Min) @ Ic, Vce: 80 @ 10mA, 5V
Supplier Device Package: VESM
Grade: Automotive
Current - Collector (Ic) (Max): 100 mA
Voltage - Collector Emitter Breakdown (Max): 50 V
Power - Max: 150 mW
Resistor - Base (R1): 10 kOhms
Resistor - Emitter Base (R2): 47 kOhms
Qualification: AEC-Q101
Resistors Included: R1 and R2
на замовлення 8000 шт:
термін постачання 21-31 дні (днів)| Кількість | Ціна |
|---|---|
| 8000+ | 3.37 грн |
| RN2107MFV,L3XHF(CT |
![]() |
Виробник: Toshiba Semiconductor and Storage
Description: TRANS PREBIAS PNP 50V 0.1A VESM
Packaging: Cut Tape (CT)
Package / Case: SOT-723
Mounting Type: Surface Mount
Transistor Type: PNP - Pre-Biased
Vce Saturation (Max) @ Ib, Ic: 300mV @ 500µA, 5mA
Current - Collector Cutoff (Max): 500nA
DC Current Gain (hFE) (Min) @ Ic, Vce: 80 @ 10mA, 5V
Supplier Device Package: VESM
Grade: Automotive
Current - Collector (Ic) (Max): 100 mA
Voltage - Collector Emitter Breakdown (Max): 50 V
Power - Max: 150 mW
Resistor - Base (R1): 10 kOhms
Resistor - Emitter Base (R2): 47 kOhms
Qualification: AEC-Q101
Resistors Included: R1 and R2
Description: TRANS PREBIAS PNP 50V 0.1A VESM
Packaging: Cut Tape (CT)
Package / Case: SOT-723
Mounting Type: Surface Mount
Transistor Type: PNP - Pre-Biased
Vce Saturation (Max) @ Ib, Ic: 300mV @ 500µA, 5mA
Current - Collector Cutoff (Max): 500nA
DC Current Gain (hFE) (Min) @ Ic, Vce: 80 @ 10mA, 5V
Supplier Device Package: VESM
Grade: Automotive
Current - Collector (Ic) (Max): 100 mA
Voltage - Collector Emitter Breakdown (Max): 50 V
Power - Max: 150 mW
Resistor - Base (R1): 10 kOhms
Resistor - Emitter Base (R2): 47 kOhms
Qualification: AEC-Q101
Resistors Included: R1 and R2
на замовлення 8000 шт:
термін постачання 21-31 дні (днів)| Кількість | Ціна |
|---|---|
| 18+ | 19.73 грн |
| RN2107,LXHF(CT |
![]() |
Виробник: Toshiba Semiconductor and Storage
Description: TRANS PREBIAS PNP 50V 0.1A SSM
Packaging: Tape & Reel (TR)
Package / Case: SC-75, SOT-416
Mounting Type: Surface Mount
Transistor Type: PNP - Pre-Biased
Vce Saturation (Max) @ Ib, Ic: 300mV @ 250µA, 5mA
Current - Collector Cutoff (Max): 500nA
DC Current Gain (hFE) (Min) @ Ic, Vce: 80 @ 10mA, 5V
Supplier Device Package: SSM
Grade: Automotive
Current - Collector (Ic) (Max): 100 mA
Voltage - Collector Emitter Breakdown (Max): 50 V
Power - Max: 100 mW
Frequency - Transition: 200 MHz
Resistor - Base (R1): 10 kOhms
Resistor - Emitter Base (R2): 47 kOhms
Qualification: AEC-Q101
Resistors Included: R1 and R2
Description: TRANS PREBIAS PNP 50V 0.1A SSM
Packaging: Tape & Reel (TR)
Package / Case: SC-75, SOT-416
Mounting Type: Surface Mount
Transistor Type: PNP - Pre-Biased
Vce Saturation (Max) @ Ib, Ic: 300mV @ 250µA, 5mA
Current - Collector Cutoff (Max): 500nA
DC Current Gain (hFE) (Min) @ Ic, Vce: 80 @ 10mA, 5V
Supplier Device Package: SSM
Grade: Automotive
Current - Collector (Ic) (Max): 100 mA
Voltage - Collector Emitter Breakdown (Max): 50 V
Power - Max: 100 mW
Frequency - Transition: 200 MHz
Resistor - Base (R1): 10 kOhms
Resistor - Emitter Base (R2): 47 kOhms
Qualification: AEC-Q101
Resistors Included: R1 and R2
на замовлення 3000 шт:
термін постачання 21-31 дні (днів)| Кількість | Ціна |
|---|---|
| 3000+ | 4.53 грн |
| RN2107,LXHF(CT |
![]() |
Виробник: Toshiba Semiconductor and Storage
Description: TRANS PREBIAS PNP 50V 0.1A SSM
Packaging: Cut Tape (CT)
Package / Case: SC-75, SOT-416
Mounting Type: Surface Mount
Transistor Type: PNP - Pre-Biased
Vce Saturation (Max) @ Ib, Ic: 300mV @ 250µA, 5mA
Current - Collector Cutoff (Max): 500nA
DC Current Gain (hFE) (Min) @ Ic, Vce: 80 @ 10mA, 5V
Supplier Device Package: SSM
Grade: Automotive
Current - Collector (Ic) (Max): 100 mA
Voltage - Collector Emitter Breakdown (Max): 50 V
Power - Max: 100 mW
Frequency - Transition: 200 MHz
Resistor - Base (R1): 10 kOhms
Resistor - Emitter Base (R2): 47 kOhms
Qualification: AEC-Q101
Resistors Included: R1 and R2
Description: TRANS PREBIAS PNP 50V 0.1A SSM
Packaging: Cut Tape (CT)
Package / Case: SC-75, SOT-416
Mounting Type: Surface Mount
Transistor Type: PNP - Pre-Biased
Vce Saturation (Max) @ Ib, Ic: 300mV @ 250µA, 5mA
Current - Collector Cutoff (Max): 500nA
DC Current Gain (hFE) (Min) @ Ic, Vce: 80 @ 10mA, 5V
Supplier Device Package: SSM
Grade: Automotive
Current - Collector (Ic) (Max): 100 mA
Voltage - Collector Emitter Breakdown (Max): 50 V
Power - Max: 100 mW
Frequency - Transition: 200 MHz
Resistor - Base (R1): 10 kOhms
Resistor - Emitter Base (R2): 47 kOhms
Qualification: AEC-Q101
Resistors Included: R1 and R2
на замовлення 5870 шт:
термін постачання 21-31 дні (днів)| Кількість | Ціна |
|---|---|
| 16+ | 21.44 грн |
| 26+ | 12.80 грн |
| 100+ | 8.00 грн |
| 500+ | 5.54 грн |
| 1000+ | 4.90 грн |
| TK125A60Z1,S4X |
![]() |
Виробник: Toshiba Semiconductor and Storage
Description: N-CH MOSFET, 600 V, 0.125 @10V,
Packaging: Tube
Package / Case: TO-220-3 Full Pack
Mounting Type: Through Hole
Operating Temperature: 150°C
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 20A (Ta)
Rds On (Max) @ Id, Vgs: 125mOhm @ 6A, 10V
Power Dissipation (Max): 40W (Tc)
Vgs(th) (Max) @ Id: 4V @ 730µA
Supplier Device Package: TO-220SIS
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±30V
Drain to Source Voltage (Vdss): 600 V
Gate Charge (Qg) (Max) @ Vgs: 28 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 1620 pF @ 300 V
Description: N-CH MOSFET, 600 V, 0.125 @10V,
Packaging: Tube
Package / Case: TO-220-3 Full Pack
Mounting Type: Through Hole
Operating Temperature: 150°C
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 20A (Ta)
Rds On (Max) @ Id, Vgs: 125mOhm @ 6A, 10V
Power Dissipation (Max): 40W (Tc)
Vgs(th) (Max) @ Id: 4V @ 730µA
Supplier Device Package: TO-220SIS
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±30V
Drain to Source Voltage (Vdss): 600 V
Gate Charge (Qg) (Max) @ Vgs: 28 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 1620 pF @ 300 V
на замовлення 88 шт:
термін постачання 21-31 дні (днів)| Кількість | Ціна |
|---|---|
| 2+ | 270.16 грн |
| 50+ | 131.83 грн |
| CMH07(TE12L,Q,M) |
![]() |
Виробник: Toshiba Semiconductor and Storage
Description: DIODE STANDARD 200V 2A MFLAT
Packaging: Tape & Reel (TR)
Package / Case: SOD-128
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 100 ns
Technology: Standard
Current - Average Rectified (Io): 2A
Supplier Device Package: M-FLAT (2.4x3.8)
Operating Temperature - Junction: -40°C ~ 150°C
Voltage - DC Reverse (Vr) (Max): 200 V
Voltage - Forward (Vf) (Max) @ If: 980 mV @ 2 A
Current - Reverse Leakage @ Vr: 10 µA @ 200 V
Description: DIODE STANDARD 200V 2A MFLAT
Packaging: Tape & Reel (TR)
Package / Case: SOD-128
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 100 ns
Technology: Standard
Current - Average Rectified (Io): 2A
Supplier Device Package: M-FLAT (2.4x3.8)
Operating Temperature - Junction: -40°C ~ 150°C
Voltage - DC Reverse (Vr) (Max): 200 V
Voltage - Forward (Vf) (Max) @ If: 980 mV @ 2 A
Current - Reverse Leakage @ Vr: 10 µA @ 200 V
товару немає в наявності
В кошику
од. на суму грн.
| CMH07(TE12L,Q,M) |
![]() |
Виробник: Toshiba Semiconductor and Storage
Description: DIODE STANDARD 200V 2A MFLAT
Packaging: Cut Tape (CT)
Package / Case: SOD-128
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 100 ns
Technology: Standard
Current - Average Rectified (Io): 2A
Supplier Device Package: M-FLAT (2.4x3.8)
Operating Temperature - Junction: -40°C ~ 150°C
Voltage - DC Reverse (Vr) (Max): 200 V
Voltage - Forward (Vf) (Max) @ If: 980 mV @ 2 A
Current - Reverse Leakage @ Vr: 10 µA @ 200 V
Description: DIODE STANDARD 200V 2A MFLAT
Packaging: Cut Tape (CT)
Package / Case: SOD-128
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 100 ns
Technology: Standard
Current - Average Rectified (Io): 2A
Supplier Device Package: M-FLAT (2.4x3.8)
Operating Temperature - Junction: -40°C ~ 150°C
Voltage - DC Reverse (Vr) (Max): 200 V
Voltage - Forward (Vf) (Max) @ If: 980 mV @ 2 A
Current - Reverse Leakage @ Vr: 10 µA @ 200 V
на замовлення 2355 шт:
термін постачання 21-31 дні (днів)| Кількість | Ціна |
|---|---|
| 6+ | 59.18 грн |
| 10+ | 34.19 грн |
| 100+ | 23.12 грн |
| 500+ | 16.60 грн |
| 1000+ | 14.95 грн |
| 2SK4037(TE12L,Q) |
![]() |
Виробник: Toshiba Semiconductor and Storage
Description: MOSFET N-CH PW-X
Packaging: Tape & Reel (TR)
Package / Case: SC-70, SOT-323
Current Rating (Amps): 3A
Frequency: 470MHz
Configuration: N-Channel
Power - Output: 36.5dBmW
Gain: 11.5dB
Technology: MOSFET (Metal Oxide)
Supplier Device Package: SC-70
Voltage - Rated: 12 V
Voltage - Test: 6 V
Current - Test: 250 mA
Description: MOSFET N-CH PW-X
Packaging: Tape & Reel (TR)
Package / Case: SC-70, SOT-323
Current Rating (Amps): 3A
Frequency: 470MHz
Configuration: N-Channel
Power - Output: 36.5dBmW
Gain: 11.5dB
Technology: MOSFET (Metal Oxide)
Supplier Device Package: SC-70
Voltage - Rated: 12 V
Voltage - Test: 6 V
Current - Test: 250 mA
товару немає в наявності
В кошику
од. на суму грн.
| TK25S06N1L,LQ |
![]() |
Виробник: Toshiba Semiconductor and Storage
Description: MOSFET N-CH 60V 25A DPAK
Packaging: Tape & Reel (TR)
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Mounting Type: Surface Mount
Operating Temperature: 175°C
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 25A (Ta)
Rds On (Max) @ Id, Vgs: 18.5mOhm @ 12.5A, 10V
Power Dissipation (Max): 57W (Tc)
Vgs(th) (Max) @ Id: 2.5V @ 100µA
Supplier Device Package: DPAK+
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 60 V
Gate Charge (Qg) (Max) @ Vgs: 15 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 855 pF @ 10 V
Description: MOSFET N-CH 60V 25A DPAK
Packaging: Tape & Reel (TR)
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Mounting Type: Surface Mount
Operating Temperature: 175°C
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 25A (Ta)
Rds On (Max) @ Id, Vgs: 18.5mOhm @ 12.5A, 10V
Power Dissipation (Max): 57W (Tc)
Vgs(th) (Max) @ Id: 2.5V @ 100µA
Supplier Device Package: DPAK+
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 60 V
Gate Charge (Qg) (Max) @ Vgs: 15 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 855 pF @ 10 V
на замовлення 2000 шт:
термін постачання 21-31 дні (днів)| Кількість | Ціна |
|---|---|
| 2000+ | 30.39 грн |
| TK25S06N1L,LQ |
![]() |
Виробник: Toshiba Semiconductor and Storage
Description: MOSFET N-CH 60V 25A DPAK
Packaging: Cut Tape (CT)
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Mounting Type: Surface Mount
Operating Temperature: 175°C
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 25A (Ta)
Rds On (Max) @ Id, Vgs: 18.5mOhm @ 12.5A, 10V
Power Dissipation (Max): 57W (Tc)
Vgs(th) (Max) @ Id: 2.5V @ 100µA
Supplier Device Package: DPAK+
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 60 V
Gate Charge (Qg) (Max) @ Vgs: 15 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 855 pF @ 10 V
Description: MOSFET N-CH 60V 25A DPAK
Packaging: Cut Tape (CT)
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Mounting Type: Surface Mount
Operating Temperature: 175°C
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 25A (Ta)
Rds On (Max) @ Id, Vgs: 18.5mOhm @ 12.5A, 10V
Power Dissipation (Max): 57W (Tc)
Vgs(th) (Max) @ Id: 2.5V @ 100µA
Supplier Device Package: DPAK+
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 60 V
Gate Charge (Qg) (Max) @ Vgs: 15 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 855 pF @ 10 V
на замовлення 3058 шт:
термін постачання 21-31 дні (днів)| Кількість | Ціна |
|---|---|
| 4+ | 112.35 грн |
| 10+ | 68.80 грн |
| 100+ | 45.84 грн |
| 500+ | 33.78 грн |
| 1000+ | 30.81 грн |
| XCEZ5V6,L3XHF |
![]() |
Виробник: Toshiba Semiconductor and Storage
Description: TVS DIODE 3.5VWM 9VC ESC
Packaging: Tape & Reel (TR)
Package / Case: SC-79, SOD-523
Mounting Type: Surface Mount
Type: Zener
Operating Temperature: 150°C (TJ)
Capacitance @ Frequency: 125pF @ 1MHz
Current - Peak Pulse (10/1000µs): 12A (8/20µs)
Voltage - Reverse Standoff (Typ): 3.5V
Supplier Device Package: ESC
Unidirectional Channels: 1
Voltage - Breakdown (Min): 5.3V
Voltage - Clamping (Max) @ Ipp: 9V
Power - Peak Pulse: 155W
Power Line Protection: No
Grade: Automotive
Qualification: AEC-Q101
Description: TVS DIODE 3.5VWM 9VC ESC
Packaging: Tape & Reel (TR)
Package / Case: SC-79, SOD-523
Mounting Type: Surface Mount
Type: Zener
Operating Temperature: 150°C (TJ)
Capacitance @ Frequency: 125pF @ 1MHz
Current - Peak Pulse (10/1000µs): 12A (8/20µs)
Voltage - Reverse Standoff (Typ): 3.5V
Supplier Device Package: ESC
Unidirectional Channels: 1
Voltage - Breakdown (Min): 5.3V
Voltage - Clamping (Max) @ Ipp: 9V
Power - Peak Pulse: 155W
Power Line Protection: No
Grade: Automotive
Qualification: AEC-Q101
на замовлення 8000 шт:
термін постачання 21-31 дні (днів)| Кількість | Ціна |
|---|---|
| 8000+ | 1.72 грн |
| XCEZ5V6,L3XHF |
![]() |
Виробник: Toshiba Semiconductor and Storage
Description: TVS DIODE 3.5VWM 9VC ESC
Packaging: Cut Tape (CT)
Package / Case: SC-79, SOD-523
Mounting Type: Surface Mount
Type: Zener
Operating Temperature: 150°C (TJ)
Capacitance @ Frequency: 125pF @ 1MHz
Current - Peak Pulse (10/1000µs): 12A (8/20µs)
Voltage - Reverse Standoff (Typ): 3.5V
Supplier Device Package: ESC
Unidirectional Channels: 1
Voltage - Breakdown (Min): 5.3V
Voltage - Clamping (Max) @ Ipp: 9V
Power - Peak Pulse: 155W
Power Line Protection: No
Grade: Automotive
Qualification: AEC-Q101
Description: TVS DIODE 3.5VWM 9VC ESC
Packaging: Cut Tape (CT)
Package / Case: SC-79, SOD-523
Mounting Type: Surface Mount
Type: Zener
Operating Temperature: 150°C (TJ)
Capacitance @ Frequency: 125pF @ 1MHz
Current - Peak Pulse (10/1000µs): 12A (8/20µs)
Voltage - Reverse Standoff (Typ): 3.5V
Supplier Device Package: ESC
Unidirectional Channels: 1
Voltage - Breakdown (Min): 5.3V
Voltage - Clamping (Max) @ Ipp: 9V
Power - Peak Pulse: 155W
Power Line Protection: No
Grade: Automotive
Qualification: AEC-Q101
на замовлення 15480 шт:
термін постачання 21-31 дні (днів)| Кількість | Ціна |
|---|---|
| 50+ | 6.86 грн |
| 100+ | 3.30 грн |
| 118+ | 2.81 грн |
| 141+ | 2.21 грн |
| 250+ | 2.00 грн |
| 500+ | 1.87 грн |
| 1000+ | 1.74 грн |
| 2500+ | 1.63 грн |
| CEZ5V6,H3F |
![]() |
Виробник: Toshiba Semiconductor and Storage
Description: 5.6 V ZENER DIODE, SOD-523(ESC)
Packaging: Tape & Reel (TR)
Package / Case: SC-79, SOD-523
Mounting Type: Surface Mount
Type: Zener
Operating Temperature: 150°C (TJ)
Applications: General Purpose
Capacitance @ Frequency: 125pF @ 1MHz
Current - Peak Pulse (10/1000µs): 12A (8/20µs)
Voltage - Reverse Standoff (Typ): 3.5V (Max)
Supplier Device Package: ESC
Unidirectional Channels: 1
Voltage - Breakdown (Min): 5.3V
Voltage - Clamping (Max) @ Ipp: 9V
Power - Peak Pulse: 155W
Power Line Protection: No
Description: 5.6 V ZENER DIODE, SOD-523(ESC)
Packaging: Tape & Reel (TR)
Package / Case: SC-79, SOD-523
Mounting Type: Surface Mount
Type: Zener
Operating Temperature: 150°C (TJ)
Applications: General Purpose
Capacitance @ Frequency: 125pF @ 1MHz
Current - Peak Pulse (10/1000µs): 12A (8/20µs)
Voltage - Reverse Standoff (Typ): 3.5V (Max)
Supplier Device Package: ESC
Unidirectional Channels: 1
Voltage - Breakdown (Min): 5.3V
Voltage - Clamping (Max) @ Ipp: 9V
Power - Peak Pulse: 155W
Power Line Protection: No
товару немає в наявності
В кошику
од. на суму грн.
| TC4066BFELNF |
Виробник: Toshiba Semiconductor and Storage
Description: IC BILATERAL SWITCH 1X1:1 14-SOP
Packaging: Cut Tape (CT)
Package / Case: 14-SOIC (0.209", 5.30mm Width)
Mounting Type: Surface Mount
Circuit: 1 x 1:1
Type: Bilateral, FET Switches
Operating Temperature: -40°C ~ 85°C
Voltage - Supply: 3V ~ 18V
Independent Circuits: 4
Voltage Supply Source: Dual Supply
Supplier Device Package: 14-SOP
Description: IC BILATERAL SWITCH 1X1:1 14-SOP
Packaging: Cut Tape (CT)
Package / Case: 14-SOIC (0.209", 5.30mm Width)
Mounting Type: Surface Mount
Circuit: 1 x 1:1
Type: Bilateral, FET Switches
Operating Temperature: -40°C ~ 85°C
Voltage - Supply: 3V ~ 18V
Independent Circuits: 4
Voltage Supply Source: Dual Supply
Supplier Device Package: 14-SOP
товару немає в наявності
В кошику
од. на суму грн.
| TCR3LM12A,RF |
![]() |
Виробник: Toshiba Semiconductor and Storage
Description: OUTPUT LDO REGULATOR 300 MA FIXE
Packaging: Tape & Reel (TR)
Package / Case: 4-XDFN Exposed Pad
Output Type: Fixed
Mounting Type: Surface Mount
Current - Output: 300mA
Operating Temperature: -40°C ~ 85°C
Output Configuration: Positive
Current - Quiescent (Iq): 2.2 µA
Voltage - Input (Max): 5.5V
Number of Regulators: 1
Supplier Device Package: 4-DFN (1x1)
Voltage - Output (Min/Fixed): 1.2V
Control Features: Enable
PSRR: 74dB ~ 43dB (100Hz ~ 100kHz)
Protection Features: Over Current, Over Temperature
Description: OUTPUT LDO REGULATOR 300 MA FIXE
Packaging: Tape & Reel (TR)
Package / Case: 4-XDFN Exposed Pad
Output Type: Fixed
Mounting Type: Surface Mount
Current - Output: 300mA
Operating Temperature: -40°C ~ 85°C
Output Configuration: Positive
Current - Quiescent (Iq): 2.2 µA
Voltage - Input (Max): 5.5V
Number of Regulators: 1
Supplier Device Package: 4-DFN (1x1)
Voltage - Output (Min/Fixed): 1.2V
Control Features: Enable
PSRR: 74dB ~ 43dB (100Hz ~ 100kHz)
Protection Features: Over Current, Over Temperature
на замовлення 10000 шт:
термін постачання 21-31 дні (днів)| Кількість | Ціна |
|---|---|
| 5000+ | 6.73 грн |
| 10000+ | 6.30 грн |
| TCR3LM12A,RF |
![]() |
Виробник: Toshiba Semiconductor and Storage
Description: OUTPUT LDO REGULATOR 300 MA FIXE
Packaging: Cut Tape (CT)
Package / Case: 4-XDFN Exposed Pad
Output Type: Fixed
Mounting Type: Surface Mount
Current - Output: 300mA
Operating Temperature: -40°C ~ 85°C
Output Configuration: Positive
Current - Quiescent (Iq): 2.2 µA
Voltage - Input (Max): 5.5V
Number of Regulators: 1
Supplier Device Package: 4-DFN (1x1)
Voltage - Output (Min/Fixed): 1.2V
Control Features: Enable
PSRR: 74dB ~ 43dB (100Hz ~ 100kHz)
Protection Features: Over Current, Over Temperature
Description: OUTPUT LDO REGULATOR 300 MA FIXE
Packaging: Cut Tape (CT)
Package / Case: 4-XDFN Exposed Pad
Output Type: Fixed
Mounting Type: Surface Mount
Current - Output: 300mA
Operating Temperature: -40°C ~ 85°C
Output Configuration: Positive
Current - Quiescent (Iq): 2.2 µA
Voltage - Input (Max): 5.5V
Number of Regulators: 1
Supplier Device Package: 4-DFN (1x1)
Voltage - Output (Min/Fixed): 1.2V
Control Features: Enable
PSRR: 74dB ~ 43dB (100Hz ~ 100kHz)
Protection Features: Over Current, Over Temperature
на замовлення 10000 шт:
термін постачання 21-31 дні (днів)| Кількість | Ціна |
|---|---|
| 20+ | 17.15 грн |
| 30+ | 11.23 грн |
| 34+ | 9.94 грн |
| 100+ | 7.98 грн |
| 250+ | 7.33 грн |
| 500+ | 6.94 грн |
| 1000+ | 6.51 грн |
| 2500+ | 6.18 грн |
| CUZ68V,H3F |
![]() |
Виробник: Toshiba Semiconductor and Storage
Description: 68 V ZENER DIODE, SOD-323 SOD-32
Packaging: Tape & Reel (TR)
Package / Case: SC-76, SOD-323
Mounting Type: Surface Mount
Type: Zener
Operating Temperature: 150°C (TJ)
Applications: General Purpose
Capacitance @ Frequency: 25pF @ 1MHz
Current - Peak Pulse (10/1000µs): 5A (8/20µs)
Voltage - Reverse Standoff (Typ): 60V (Max)
Supplier Device Package: USC
Unidirectional Channels: 1
Voltage - Breakdown (Min): 64V
Voltage - Clamping (Max) @ Ipp: 115V
Power - Peak Pulse: 620W
Power Line Protection: No
Description: 68 V ZENER DIODE, SOD-323 SOD-32
Packaging: Tape & Reel (TR)
Package / Case: SC-76, SOD-323
Mounting Type: Surface Mount
Type: Zener
Operating Temperature: 150°C (TJ)
Applications: General Purpose
Capacitance @ Frequency: 25pF @ 1MHz
Current - Peak Pulse (10/1000µs): 5A (8/20µs)
Voltage - Reverse Standoff (Typ): 60V (Max)
Supplier Device Package: USC
Unidirectional Channels: 1
Voltage - Breakdown (Min): 64V
Voltage - Clamping (Max) @ Ipp: 115V
Power - Peak Pulse: 620W
Power Line Protection: No
на замовлення 3000 шт:
термін постачання 21-31 дні (днів)| Кількість | Ціна |
|---|---|
| 3000+ | 2.14 грн |
| CUZ68V,H3F |
![]() |
Виробник: Toshiba Semiconductor and Storage
Description: 68 V ZENER DIODE, SOD-323 SOD-32
Packaging: Cut Tape (CT)
Package / Case: SC-76, SOD-323
Mounting Type: Surface Mount
Type: Zener
Operating Temperature: 150°C (TJ)
Applications: General Purpose
Capacitance @ Frequency: 25pF @ 1MHz
Current - Peak Pulse (10/1000µs): 5A (8/20µs)
Voltage - Reverse Standoff (Typ): 60V (Max)
Supplier Device Package: USC
Unidirectional Channels: 1
Voltage - Breakdown (Min): 64V
Voltage - Clamping (Max) @ Ipp: 115V
Power - Peak Pulse: 620W
Power Line Protection: No
Description: 68 V ZENER DIODE, SOD-323 SOD-32
Packaging: Cut Tape (CT)
Package / Case: SC-76, SOD-323
Mounting Type: Surface Mount
Type: Zener
Operating Temperature: 150°C (TJ)
Applications: General Purpose
Capacitance @ Frequency: 25pF @ 1MHz
Current - Peak Pulse (10/1000µs): 5A (8/20µs)
Voltage - Reverse Standoff (Typ): 60V (Max)
Supplier Device Package: USC
Unidirectional Channels: 1
Voltage - Breakdown (Min): 64V
Voltage - Clamping (Max) @ Ipp: 115V
Power - Peak Pulse: 620W
Power Line Protection: No
на замовлення 3000 шт:
термін постачання 21-31 дні (днів)| Кількість | Ціна |
|---|---|
| 50+ | 6.86 грн |
| 87+ | 3.80 грн |
| 100+ | 3.30 грн |
| 120+ | 2.60 грн |
| 250+ | 2.36 грн |
| 500+ | 2.21 грн |
| 1000+ | 2.05 грн |
| TC74HC4538AF-ELF |
Виробник: Toshiba Semiconductor and Storage
Description: IC MMV 2-CIR 25-NS 14-SOP
Packaging: Cut Tape (CT)
Package / Case: 14-SOIC (0.209", 5.30mm Width)
Mounting Type: Surface Mount
Logic Type: Monostable
Operating Temperature: -40°C ~ 85°C
Propagation Delay: 25 ns
Independent Circuits: 2
Current - Output High, Low: 5.2mA, 5.2mA
Schmitt Trigger Input: Yes
Supplier Device Package: 14-SOP
Voltage - Supply: 2 V ~ 6 V
Description: IC MMV 2-CIR 25-NS 14-SOP
Packaging: Cut Tape (CT)
Package / Case: 14-SOIC (0.209", 5.30mm Width)
Mounting Type: Surface Mount
Logic Type: Monostable
Operating Temperature: -40°C ~ 85°C
Propagation Delay: 25 ns
Independent Circuits: 2
Current - Output High, Low: 5.2mA, 5.2mA
Schmitt Trigger Input: Yes
Supplier Device Package: 14-SOP
Voltage - Supply: 2 V ~ 6 V
товару немає в наявності
В кошику
од. на суму грн.
| TCR3DM45,LF(SE |
![]() |
Виробник: Toshiba Semiconductor and Storage
Description: IC REG LINEAR 4.5V 300MA 4-DFN
Packaging: Tape & Reel (TR)
Package / Case: 4-UDFN Exposed Pad
Output Type: Fixed
Mounting Type: Surface Mount
Current - Output: 300mA
Operating Temperature: -40°C ~ 85°C
Output Configuration: Positive
Current - Quiescent (Iq): 125 µA
Voltage - Input (Max): 5.5V
Number of Regulators: 1
Supplier Device Package: 4-DFN (1x1)
Voltage - Output (Min/Fixed): 4.5V
Control Features: Enable
Voltage Dropout (Max): 0.2V @ 300mA
Protection Features: Over Current, Over Temperature
Description: IC REG LINEAR 4.5V 300MA 4-DFN
Packaging: Tape & Reel (TR)
Package / Case: 4-UDFN Exposed Pad
Output Type: Fixed
Mounting Type: Surface Mount
Current - Output: 300mA
Operating Temperature: -40°C ~ 85°C
Output Configuration: Positive
Current - Quiescent (Iq): 125 µA
Voltage - Input (Max): 5.5V
Number of Regulators: 1
Supplier Device Package: 4-DFN (1x1)
Voltage - Output (Min/Fixed): 4.5V
Control Features: Enable
Voltage Dropout (Max): 0.2V @ 300mA
Protection Features: Over Current, Over Temperature
на замовлення 30000 шт:
термін постачання 21-31 дні (днів)| Кількість | Ціна |
|---|---|
| 10000+ | 5.82 грн |
| 20000+ | 5.47 грн |
| 30000+ | 5.40 грн |
| TCR3DM45,LF(SE |
![]() |
Виробник: Toshiba Semiconductor and Storage
Description: IC REG LINEAR 4.5V 300MA 4-DFN
Packaging: Cut Tape (CT)
Package / Case: 4-UDFN Exposed Pad
Output Type: Fixed
Mounting Type: Surface Mount
Current - Output: 300mA
Operating Temperature: -40°C ~ 85°C
Output Configuration: Positive
Current - Quiescent (Iq): 125 µA
Voltage - Input (Max): 5.5V
Number of Regulators: 1
Supplier Device Package: 4-DFN (1x1)
Voltage - Output (Min/Fixed): 4.5V
Control Features: Enable
Voltage Dropout (Max): 0.2V @ 300mA
Protection Features: Over Current, Over Temperature
Description: IC REG LINEAR 4.5V 300MA 4-DFN
Packaging: Cut Tape (CT)
Package / Case: 4-UDFN Exposed Pad
Output Type: Fixed
Mounting Type: Surface Mount
Current - Output: 300mA
Operating Temperature: -40°C ~ 85°C
Output Configuration: Positive
Current - Quiescent (Iq): 125 µA
Voltage - Input (Max): 5.5V
Number of Regulators: 1
Supplier Device Package: 4-DFN (1x1)
Voltage - Output (Min/Fixed): 4.5V
Control Features: Enable
Voltage Dropout (Max): 0.2V @ 300mA
Protection Features: Over Current, Over Temperature
на замовлення 30000 шт:
термін постачання 21-31 дні (днів)| Кількість | Ціна |
|---|---|
| 23+ | 15.44 грн |
| 33+ | 10.08 грн |
| 38+ | 8.89 грн |
| 100+ | 7.12 грн |
| 250+ | 6.54 грн |
| 500+ | 6.19 грн |
| 1000+ | 5.80 грн |
| 2500+ | 5.50 грн |
| 5000+ | 5.32 грн |
| 2SC5738(TE85L,F) |
![]() |
Виробник: Toshiba Semiconductor and Storage
Description: NPN BIPOLAR TRANSISTOR, 20 V, 3.
Packaging: Tape & Reel (TR)
Package / Case: TO-236-3, SC-59, SOT-23-3
Mounting Type: Surface Mount
Transistor Type: NPN
Operating Temperature: 150°C (TJ)
Vce Saturation (Max) @ Ib, Ic: 150mV @ 32mA, 1.6A
Current - Collector Cutoff (Max): 100nA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce: 400 @ 500mA, 2V
Supplier Device Package: TSM
Current - Collector (Ic) (Max): 3.5 A
Voltage - Collector Emitter Breakdown (Max): 20 V
Power - Max: 625 mW
Description: NPN BIPOLAR TRANSISTOR, 20 V, 3.
Packaging: Tape & Reel (TR)
Package / Case: TO-236-3, SC-59, SOT-23-3
Mounting Type: Surface Mount
Transistor Type: NPN
Operating Temperature: 150°C (TJ)
Vce Saturation (Max) @ Ib, Ic: 150mV @ 32mA, 1.6A
Current - Collector Cutoff (Max): 100nA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce: 400 @ 500mA, 2V
Supplier Device Package: TSM
Current - Collector (Ic) (Max): 3.5 A
Voltage - Collector Emitter Breakdown (Max): 20 V
Power - Max: 625 mW
товару немає в наявності
В кошику
од. на суму грн.
| XSM6J372NW,LXHF |
![]() |
Виробник: Toshiba Semiconductor and Storage
Description: P-CH MOSFET, -30 V, -6.0 A, 0.04
Packaging: Tape & Reel (TR)
Package / Case: 6-UDFN Exposed Pad
Mounting Type: Surface Mount, Wettable Flank
Operating Temperature: 150°C
Technology: MOSFET (Metal Oxide)
FET Type: P-Channel
Current - Continuous Drain (Id) @ 25°C: 6A (Ta)
Rds On (Max) @ Id, Vgs: 42mOhm @ 4A, 10V
Power Dissipation (Max): 1.51W (Ta)
Vgs(th) (Max) @ Id: 1.2V @ 1mA
Supplier Device Package: DFN2020B
Drive Voltage (Max Rds On, Min Rds On): 1.8V, 10V
Vgs (Max): +6V, -12V
Drain to Source Voltage (Vdss): 30 V
Gate Charge (Qg) (Max) @ Vgs: 8.2 nC @ 4.5 V
Input Capacitance (Ciss) (Max) @ Vds: 560 pF @ 15 V
Description: P-CH MOSFET, -30 V, -6.0 A, 0.04
Packaging: Tape & Reel (TR)
Package / Case: 6-UDFN Exposed Pad
Mounting Type: Surface Mount, Wettable Flank
Operating Temperature: 150°C
Technology: MOSFET (Metal Oxide)
FET Type: P-Channel
Current - Continuous Drain (Id) @ 25°C: 6A (Ta)
Rds On (Max) @ Id, Vgs: 42mOhm @ 4A, 10V
Power Dissipation (Max): 1.51W (Ta)
Vgs(th) (Max) @ Id: 1.2V @ 1mA
Supplier Device Package: DFN2020B
Drive Voltage (Max Rds On, Min Rds On): 1.8V, 10V
Vgs (Max): +6V, -12V
Drain to Source Voltage (Vdss): 30 V
Gate Charge (Qg) (Max) @ Vgs: 8.2 nC @ 4.5 V
Input Capacitance (Ciss) (Max) @ Vds: 560 pF @ 15 V
товару немає в наявності
В кошику
од. на суму грн.
| XSM6J372NW,LXHF |
![]() |
Виробник: Toshiba Semiconductor and Storage
Description: P-CH MOSFET, -30 V, -6.0 A, 0.04
Packaging: Cut Tape (CT)
Package / Case: 6-UDFN Exposed Pad
Mounting Type: Surface Mount, Wettable Flank
Operating Temperature: 150°C
Technology: MOSFET (Metal Oxide)
FET Type: P-Channel
Current - Continuous Drain (Id) @ 25°C: 6A (Ta)
Rds On (Max) @ Id, Vgs: 42mOhm @ 4A, 10V
Power Dissipation (Max): 1.51W (Ta)
Vgs(th) (Max) @ Id: 1.2V @ 1mA
Supplier Device Package: DFN2020B
Drive Voltage (Max Rds On, Min Rds On): 1.8V, 10V
Vgs (Max): +6V, -12V
Drain to Source Voltage (Vdss): 30 V
Gate Charge (Qg) (Max) @ Vgs: 8.2 nC @ 4.5 V
Input Capacitance (Ciss) (Max) @ Vds: 560 pF @ 15 V
Description: P-CH MOSFET, -30 V, -6.0 A, 0.04
Packaging: Cut Tape (CT)
Package / Case: 6-UDFN Exposed Pad
Mounting Type: Surface Mount, Wettable Flank
Operating Temperature: 150°C
Technology: MOSFET (Metal Oxide)
FET Type: P-Channel
Current - Continuous Drain (Id) @ 25°C: 6A (Ta)
Rds On (Max) @ Id, Vgs: 42mOhm @ 4A, 10V
Power Dissipation (Max): 1.51W (Ta)
Vgs(th) (Max) @ Id: 1.2V @ 1mA
Supplier Device Package: DFN2020B
Drive Voltage (Max Rds On, Min Rds On): 1.8V, 10V
Vgs (Max): +6V, -12V
Drain to Source Voltage (Vdss): 30 V
Gate Charge (Qg) (Max) @ Vgs: 8.2 nC @ 4.5 V
Input Capacitance (Ciss) (Max) @ Vds: 560 pF @ 15 V
товару немає в наявності
В кошику
од. на суму грн.



















