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XPQR8308QB,LXHQ XPQR8308QB,LXHQ Toshiba Semiconductor and Storage docget.jsp?did=152781&prodName=XPQR8308QB Description: 80V UMOS10 L-TOGL 0.83MOHM
Packaging: Tape & Reel (TR)
Package / Case: 8-PowerBSFN
Mounting Type: Surface Mount
Operating Temperature: 175°C
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 350A (Ta)
Rds On (Max) @ Id, Vgs: 0.83mOhm @ 175A, 10V
Power Dissipation (Max): 750W (Tc)
Vgs(th) (Max) @ Id: 3.5V @ 3.2mA
Supplier Device Package: L-TOGL™
Grade: Automotive
Drive Voltage (Max Rds On, Min Rds On): 6V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 80 V
Gate Charge (Qg) (Max) @ Vgs: 305 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 24700 pF @ 10 V
Qualification: AEC-Q101
товару немає в наявності
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XPQR8308QB,LXHQ XPQR8308QB,LXHQ Toshiba Semiconductor and Storage docget.jsp?did=152781&prodName=XPQR8308QB Description: 80V UMOS10 L-TOGL 0.83MOHM
Packaging: Cut Tape (CT)
Package / Case: 8-PowerBSFN
Mounting Type: Surface Mount
Operating Temperature: 175°C
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 350A (Ta)
Rds On (Max) @ Id, Vgs: 0.83mOhm @ 175A, 10V
Power Dissipation (Max): 750W (Tc)
Vgs(th) (Max) @ Id: 3.5V @ 3.2mA
Supplier Device Package: L-TOGL™
Grade: Automotive
Drive Voltage (Max Rds On, Min Rds On): 6V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 80 V
Gate Charge (Qg) (Max) @ Vgs: 305 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 24700 pF @ 10 V
Qualification: AEC-Q101
на замовлення 1052 шт:
термін постачання 21-31 дні (днів)
1+450.93 грн
10+285.46 грн
25+246.75 грн
100+190.46 грн
250+170.28 грн
500+157.87 грн
В кошику  од. на суму  грн.
TLP171A(TP,F Toshiba Semiconductor and Storage TLP171A_datasheet_en_20230620.pdf?did=13862&prodName=TLP171A Description: SSR RELAY SPST-NO 400MA 0-60V
Packaging: Tape & Reel (TR)
Package / Case: 4-SOP (0.173", 4.40mm)
Output Type: AC, DC
Mounting Type: Surface Mount
Voltage - Input: 1.27VDC
Circuit: SPST-NO (1 Form A)
Operating Temperature: -40°C ~ 85°C
Termination Style: Gull Wing
Load Current: 400 mA
Approval Agency: cUL, UL, VDE
Supplier Device Package: 4-SOP
Voltage - Load: 0 V ~ 60 V
On-State Resistance (Max): 2 Ohms
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TLP171A(TP,F Toshiba Semiconductor and Storage TLP171A_datasheet_en_20230620.pdf?did=13862&prodName=TLP171A Description: SSR RELAY SPST-NO 400MA 0-60V
Packaging: Cut Tape (CT)
Package / Case: 4-SOP (0.173", 4.40mm)
Output Type: AC, DC
Mounting Type: Surface Mount
Voltage - Input: 1.27VDC
Circuit: SPST-NO (1 Form A)
Operating Temperature: -40°C ~ 85°C
Termination Style: Gull Wing
Load Current: 400 mA
Approval Agency: cUL, UL, VDE
Supplier Device Package: 4-SOP
Voltage - Load: 0 V ~ 60 V
On-State Resistance (Max): 2 Ohms
на замовлення 1428 шт:
термін постачання 21-31 дні (днів)
3+130.99 грн
10+110.09 грн
25+104.31 грн
50+93.97 грн
100+90.23 грн
250+85.50 грн
500+80.75 грн
1000+77.52 грн
Мінімальне замовлення: 3
В кошику  од. на суму  грн.
TC7WH125FU,LJ(CT TC7WH125FU,LJ(CT Toshiba Semiconductor and Storage TC7WH125FU_datasheet_en_20200205.pdf?did=20134&prodName=TC7WH125FU Description: IC BUFFER NON-INVERT 5.5V SM8
Packaging: Tape & Reel (TR)
Package / Case: 8-TSSOP, 8-MSOP (0.110", 2.80mm Width)
Output Type: 3-State
Mounting Type: Surface Mount
Number of Elements: 2
Logic Type: Buffer, Non-Inverting
Operating Temperature: -40°C ~ 85°C (TA)
Voltage - Supply: 2V ~ 5.5V
Number of Bits per Element: 1
Current - Output High, Low: 8mA, 8mA
Supplier Device Package: 8-SSOP
товару немає в наявності
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TC7WH125FU,LJ(CT TC7WH125FU,LJ(CT Toshiba Semiconductor and Storage TC7WH125FU_datasheet_en_20200205.pdf?did=20134&prodName=TC7WH125FU Description: IC BUFFER NON-INVERT 5.5V SM8
Packaging: Cut Tape (CT)
Package / Case: 8-TSSOP, 8-MSOP (0.110", 2.80mm Width)
Output Type: 3-State
Mounting Type: Surface Mount
Number of Elements: 2
Logic Type: Buffer, Non-Inverting
Operating Temperature: -40°C ~ 85°C (TA)
Voltage - Supply: 2V ~ 5.5V
Number of Bits per Element: 1
Current - Output High, Low: 8mA, 8mA
Supplier Device Package: 8-SSOP
на замовлення 2542 шт:
термін постачання 21-31 дні (днів)
24+13.50 грн
36+8.64 грн
41+7.55 грн
100+6.03 грн
250+5.52 грн
500+5.22 грн
1000+4.88 грн
Мінімальне замовлення: 24
В кошику  од. на суму  грн.
TB9083FTG(EL) Toshiba Semiconductor and Storage docget.jsp?did=90360&prodName=TB9083FTG Description: AEC-Q100 3-PHASE BLDC GATE DRV 4
Packaging: Tape & Reel (TR)
Package / Case: 48-VFQFN Exposed Pad
Mounting Type: Surface Mount, Wettable Flank
Function: Controller - Current Management
Interface: SPI
Operating Temperature: -40°C ~ 150°C (TA)
Output Configuration: Half Bridge (3)
Voltage - Supply: 3V ~ 5.5V, 4.5V ~ 28V
Applications: General Purpose
Technology: Power MOSFET
Supplier Device Package: 48-VQFN (7x7)
Motor Type - Stepper: Multiphase
Motor Type - AC, DC: Brushless DC (BLDC)
Grade: Automotive
Qualification: AEC-Q100
на замовлення 3000 шт:
термін постачання 21-31 дні (днів)
3000+310.85 грн
Мінімальне замовлення: 3000
В кошику  од. на суму  грн.
TB9083FTG(EL) Toshiba Semiconductor and Storage docget.jsp?did=90360&prodName=TB9083FTG Description: AEC-Q100 3-PHASE BLDC GATE DRV 4
Packaging: Cut Tape (CT)
Package / Case: 48-VFQFN Exposed Pad
Mounting Type: Surface Mount, Wettable Flank
Function: Controller - Current Management
Interface: SPI
Operating Temperature: -40°C ~ 150°C (TA)
Output Configuration: Half Bridge (3)
Voltage - Supply: 3V ~ 5.5V, 4.5V ~ 28V
Applications: General Purpose
Technology: Power MOSFET
Supplier Device Package: 48-VQFN (7x7)
Motor Type - Stepper: Multiphase
Motor Type - AC, DC: Brushless DC (BLDC)
Grade: Automotive
Qualification: AEC-Q100
на замовлення 3008 шт:
термін постачання 21-31 дні (днів)
1+693.86 грн
10+451.58 грн
25+395.24 грн
100+311.15 грн
250+281.80 грн
500+280.92 грн
В кошику  од. на суму  грн.
DF2B7AFU,H3F DF2B7AFU,H3F Toshiba Semiconductor and Storage DF2B7AFU_datasheet_en_20180118.pdf?did=55588&prodName=DF2B7AFU Description: TVS DIODE 5.5VWM 20VC USC
Packaging: Tape & Reel (TR)
Package / Case: SC-76, SOD-323
Mounting Type: Surface Mount
Type: Zener
Operating Temperature: 150°C (TJ)
Applications: General Purpose
Capacitance @ Frequency: 8.5pF @ 1MHz
Current - Peak Pulse (10/1000µs): 4A (8/20µs)
Voltage - Reverse Standoff (Typ): 5.5V (Max)
Supplier Device Package: USC
Bidirectional Channels: 1
Voltage - Breakdown (Min): 5.8V
Voltage - Clamping (Max) @ Ipp: 20V
Power - Peak Pulse: 80W
Power Line Protection: No
на замовлення 6000 шт:
термін постачання 21-31 дні (днів)
3000+1.59 грн
6000+1.49 грн
Мінімальне замовлення: 3000
В кошику  од. на суму  грн.
DF2B7AFU,H3F DF2B7AFU,H3F Toshiba Semiconductor and Storage DF2B7AFU_datasheet_en_20180118.pdf?did=55588&prodName=DF2B7AFU Description: TVS DIODE 5.5VWM 20VC USC
Packaging: Cut Tape (CT)
Package / Case: SC-76, SOD-323
Mounting Type: Surface Mount
Type: Zener
Operating Temperature: 150°C (TJ)
Applications: General Purpose
Capacitance @ Frequency: 8.5pF @ 1MHz
Current - Peak Pulse (10/1000µs): 4A (8/20µs)
Voltage - Reverse Standoff (Typ): 5.5V (Max)
Supplier Device Package: USC
Bidirectional Channels: 1
Voltage - Breakdown (Min): 5.8V
Voltage - Clamping (Max) @ Ipp: 20V
Power - Peak Pulse: 80W
Power Line Protection: No
на замовлення 6809 шт:
термін постачання 21-31 дні (днів)
37+8.73 грн
49+6.27 грн
103+2.99 грн
500+2.74 грн
1000+2.67 грн
Мінімальне замовлення: 37
В кошику  од. на суму  грн.
DF2B7AE,L3F DF2B7AE,L3F Toshiba Semiconductor and Storage DF2B7AE_datasheet_en_20220907.pdf?did=55583&prodName=DF2B7AE Description: TVS DIODE 5.5VWM 20VC ESC
Packaging: Tape & Reel (TR)
Package / Case: SC-79, SOD-523
Mounting Type: Surface Mount
Type: Zener
Operating Temperature: 150°C (TJ)
Applications: General Purpose
Capacitance @ Frequency: 8.5pF @ 1MHz
Current - Peak Pulse (10/1000µs): 4A (8/20µs)
Voltage - Reverse Standoff (Typ): 5.5V (Max)
Supplier Device Package: ESC
Bidirectional Channels: 1
Voltage - Breakdown (Min): 5.8V
Voltage - Clamping (Max) @ Ipp: 20V
Power - Peak Pulse: 80W
Power Line Protection: No
товару немає в наявності
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DF2B7AE,L3F DF2B7AE,L3F Toshiba Semiconductor and Storage DF2B7AE_datasheet_en_20220907.pdf?did=55583&prodName=DF2B7AE Description: TVS DIODE 5.5VWM 20VC ESC
Packaging: Cut Tape (CT)
Package / Case: SC-79, SOD-523
Mounting Type: Surface Mount
Type: Zener
Operating Temperature: 150°C (TJ)
Applications: General Purpose
Capacitance @ Frequency: 8.5pF @ 1MHz
Current - Peak Pulse (10/1000µs): 4A (8/20µs)
Voltage - Reverse Standoff (Typ): 5.5V (Max)
Supplier Device Package: ESC
Bidirectional Channels: 1
Voltage - Breakdown (Min): 5.8V
Voltage - Clamping (Max) @ Ipp: 20V
Power - Peak Pulse: 80W
Power Line Protection: No
на замовлення 5066 шт:
термін постачання 21-31 дні (днів)
37+8.73 грн
50+6.12 грн
100+3.13 грн
500+2.63 грн
1000+2.33 грн
2000+2.27 грн
Мінімальне замовлення: 37
В кошику  од. на суму  грн.
TRS20H120H,S1Q TRS20H120H,S1Q Toshiba Semiconductor and Storage docget.jsp?did=158273&prodName=TRS20H120H Description: DIODE SIL CARB 1200V 61A TO2472L
Packaging: Tube
Package / Case: TO-247-2
Mounting Type: Through Hole
Speed: No Recovery Time > 500mA (Io)
Reverse Recovery Time (trr): 0 ns
Technology: SiC (Silicon Carbide) Schottky
Capacitance @ Vr, F: 2070pF @ 1V, 1MHz
Current - Average Rectified (Io): 61A
Supplier Device Package: TO-247-2L
Operating Temperature - Junction: 175°C
Voltage - DC Reverse (Vr) (Max): 1200 V
Voltage - Forward (Vf) (Max) @ If: 1.45 V @ 20 A
Current - Reverse Leakage @ Vr: 130 µA @ 1200 V
на замовлення 60 шт:
термін постачання 21-31 дні (днів)
1+893.92 грн
30+678.43 грн
В кошику  од. на суму  грн.
RN4906FE,LXHF(CT RN4906FE,LXHF(CT Toshiba Semiconductor and Storage RN4906FE_datasheet_en_20210818.pdf?did=19027&prodName=RN4906FE Description: AUTO AEC-Q 2-IN-1 (POINT-SYMMETR
Packaging: Tape & Reel (TR)
Package / Case: SOT-563, SOT-666
Mounting Type: Surface Mount
Transistor Type: 1 NPN, 1 PNP - Pre-Biased (Dual)
Power - Max: 100mW
Current - Collector (Ic) (Max): 100mA
Voltage - Collector Emitter Breakdown (Max): 50V
Vce Saturation (Max) @ Ib, Ic: 300mV @ 250µA, 5mA
Current - Collector Cutoff (Max): 500nA
DC Current Gain (hFE) (Min) @ Ic, Vce: 80 @ 10mA, 5V
Frequency - Transition: 200MHz, 250MHz
Resistor - Base (R1): 4.7kOhms
Resistor - Emitter Base (R2): 47kOhms
Supplier Device Package: ES6
Grade: Automotive
Qualification: AEC-Q101
на замовлення 4000 шт:
термін постачання 21-31 дні (днів)
4000+5.97 грн
Мінімальне замовлення: 4000
В кошику  од. на суму  грн.
RN4906FE,LXHF(CT RN4906FE,LXHF(CT Toshiba Semiconductor and Storage RN4906FE_datasheet_en_20210818.pdf?did=19027&prodName=RN4906FE Description: AUTO AEC-Q 2-IN-1 (POINT-SYMMETR
Packaging: Cut Tape (CT)
Package / Case: SOT-563, SOT-666
Mounting Type: Surface Mount
Transistor Type: 1 NPN, 1 PNP - Pre-Biased (Dual)
Power - Max: 100mW
Current - Collector (Ic) (Max): 100mA
Voltage - Collector Emitter Breakdown (Max): 50V
Vce Saturation (Max) @ Ib, Ic: 300mV @ 250µA, 5mA
Current - Collector Cutoff (Max): 500nA
DC Current Gain (hFE) (Min) @ Ic, Vce: 80 @ 10mA, 5V
Frequency - Transition: 200MHz, 250MHz
Resistor - Base (R1): 4.7kOhms
Resistor - Emitter Base (R2): 47kOhms
Supplier Device Package: ES6
Grade: Automotive
Qualification: AEC-Q101
на замовлення 7868 шт:
термін постачання 21-31 дні (днів)
11+29.37 грн
18+17.66 грн
100+11.09 грн
500+7.75 грн
1000+6.89 грн
2000+6.17 грн
Мінімальне замовлення: 11
В кошику  од. на суму  грн.
SSM3J66MFV,L3F SSM3J66MFV,L3F Toshiba Semiconductor and Storage SSM3J66MFV_datasheet_en_20210928.pdf?did=61143&prodName=SSM3J66MFV Description: MOSFET P-CH 20V 800MA VESM
Packaging: Tape & Reel (TR)
Package / Case: SOT-723
Mounting Type: Surface Mount
Operating Temperature: 150°C
Technology: MOSFET (Metal Oxide)
FET Type: P-Channel
Current - Continuous Drain (Id) @ 25°C: 800mA (Ta)
Rds On (Max) @ Id, Vgs: 390mOhm @ 800mA, 4.5V
Power Dissipation (Max): 150mW (Ta)
Vgs(th) (Max) @ Id: 1V @ 1mA
Supplier Device Package: VESM
Drive Voltage (Max Rds On, Min Rds On): 1.2V, 4.5V
Vgs (Max): +6V, -8V
Drain to Source Voltage (Vdss): 20 V
Gate Charge (Qg) (Max) @ Vgs: 1.6 nC @ 4.5 V
Input Capacitance (Ciss) (Max) @ Vds: 100 pF @ 10 V
товару немає в наявності
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SSM3J66MFV,L3F SSM3J66MFV,L3F Toshiba Semiconductor and Storage SSM3J66MFV_datasheet_en_20210928.pdf?did=61143&prodName=SSM3J66MFV Description: MOSFET P-CH 20V 800MA VESM
Packaging: Cut Tape (CT)
Package / Case: SOT-723
Mounting Type: Surface Mount
Operating Temperature: 150°C
Technology: MOSFET (Metal Oxide)
FET Type: P-Channel
Current - Continuous Drain (Id) @ 25°C: 800mA (Ta)
Rds On (Max) @ Id, Vgs: 390mOhm @ 800mA, 4.5V
Power Dissipation (Max): 150mW (Ta)
Vgs(th) (Max) @ Id: 1V @ 1mA
Supplier Device Package: VESM
Drive Voltage (Max Rds On, Min Rds On): 1.2V, 4.5V
Vgs (Max): +6V, -8V
Drain to Source Voltage (Vdss): 20 V
Gate Charge (Qg) (Max) @ Vgs: 1.6 nC @ 4.5 V
Input Capacitance (Ciss) (Max) @ Vds: 100 pF @ 10 V
на замовлення 10535 шт:
термін постачання 21-31 дні (днів)
14+23.82 грн
22+13.91 грн
100+8.74 грн
500+6.07 грн
1000+5.38 грн
2000+4.80 грн
Мінімальне замовлення: 14
В кошику  од. на суму  грн.
TCR3DM18,RF(SE TCR3DM18,RF(SE Toshiba Semiconductor and Storage TCR3DM10_datasheet_en_20210927.pdf?did=140551&prodName=TCR3DM10 Description: LDO REG IOUT: 300MA VIN: 6V VOUT
Packaging: Tape & Reel (TR)
Package / Case: 4-UDFN Exposed Pad
Output Type: Fixed
Mounting Type: Surface Mount
Current - Output: 300mA
Operating Temperature: -40°C ~ 85°C
Output Configuration: Positive
Voltage - Input (Max): 5.5V
Number of Regulators: 1
Supplier Device Package: 4-DFN (1x1)
Voltage - Output (Min/Fixed): 1.8V
Control Features: Enable
Voltage Dropout (Max): 0.38V @ 300mA
Protection Features: Over Current, Over Temperature
товару немає в наявності
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TCR3DM18,RF(SE TCR3DM18,RF(SE Toshiba Semiconductor and Storage TCR3DM10_datasheet_en_20210927.pdf?did=140551&prodName=TCR3DM10 Description: LDO REG IOUT: 300MA VIN: 6V VOUT
Packaging: Cut Tape (CT)
Package / Case: 4-UDFN Exposed Pad
Output Type: Fixed
Mounting Type: Surface Mount
Current - Output: 300mA
Operating Temperature: -40°C ~ 85°C
Output Configuration: Positive
Voltage - Input (Max): 5.5V
Number of Regulators: 1
Supplier Device Package: 4-DFN (1x1)
Voltage - Output (Min/Fixed): 1.8V
Control Features: Enable
Voltage Dropout (Max): 0.38V @ 300mA
Protection Features: Over Current, Over Temperature
на замовлення 2675 шт:
термін постачання 21-31 дні (днів)
9+38.90 грн
14+22.48 грн
25+18.44 грн
100+13.01 грн
250+10.90 грн
500+9.60 грн
1000+8.37 грн
2500+7.21 грн
Мінімальне замовлення: 9
В кошику  од. на суму  грн.
TJ20S04M3L(T6L1,NQ TJ20S04M3L(T6L1,NQ Toshiba Semiconductor and Storage TJ20S04M3L_datasheet_en_20200624.pdf?did=11300&prodName=TJ20S04M3L Description: MOSFET P-CH 40V 20A DPAK
Packaging: Tape & Reel (TR)
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Mounting Type: Surface Mount
Operating Temperature: 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: P-Channel
Current - Continuous Drain (Id) @ 25°C: 20A (Ta)
Rds On (Max) @ Id, Vgs: 22.2mOhm @ 10A, 10V
Power Dissipation (Max): 41W (Tc)
Vgs(th) (Max) @ Id: 3V @ 1mA
Supplier Device Package: DPAK+
Drive Voltage (Max Rds On, Min Rds On): 6V, 10V
Vgs (Max): +10V, -20V
Drain to Source Voltage (Vdss): 40 V
Gate Charge (Qg) (Max) @ Vgs: 37 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 1850 pF @ 10 V
товару немає в наявності
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TJ20S04M3L(T6L1,NQ TJ20S04M3L(T6L1,NQ Toshiba Semiconductor and Storage TJ20S04M3L_datasheet_en_20200624.pdf?did=11300&prodName=TJ20S04M3L Description: MOSFET P-CH 40V 20A DPAK
Packaging: Cut Tape (CT)
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Mounting Type: Surface Mount
Operating Temperature: 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: P-Channel
Current - Continuous Drain (Id) @ 25°C: 20A (Ta)
Rds On (Max) @ Id, Vgs: 22.2mOhm @ 10A, 10V
Power Dissipation (Max): 41W (Tc)
Vgs(th) (Max) @ Id: 3V @ 1mA
Supplier Device Package: DPAK+
Drive Voltage (Max Rds On, Min Rds On): 6V, 10V
Vgs (Max): +10V, -20V
Drain to Source Voltage (Vdss): 40 V
Gate Charge (Qg) (Max) @ Vgs: 37 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 1850 pF @ 10 V
на замовлення 1067 шт:
термін постачання 21-31 дні (днів)
3+134.17 грн
10+82.34 грн
100+55.46 грн
500+41.22 грн
1000+37.74 грн
Мінімальне замовлення: 3
В кошику  од. на суму  грн.
RN2410,LF RN2410,LF Toshiba Semiconductor and Storage RN2410_datasheet_en_20210830.pdf?did=18878&prodName=RN2410 Description: TRANS PREBIAS PNP 50V SMINI
Packaging: Tape & Reel (TR)
Package / Case: TO-236-3, SC-59, SOT-23-3
Mounting Type: Surface Mount
Transistor Type: PNP - Pre-Biased
Vce Saturation (Max) @ Ib, Ic: 300mV @ 250µA, 5mA
Current - Collector Cutoff (Max): 100nA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce: 120 @ 1mA, 5V
Supplier Device Package: S-Mini
Current - Collector (Ic) (Max): 100 mA
Voltage - Collector Emitter Breakdown (Max): 50 V
Power - Max: 200 mW
Frequency - Transition: 200 MHz
Resistor - Base (R1): 4.7 kOhms
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RN2410,LF RN2410,LF Toshiba Semiconductor and Storage RN2410_datasheet_en_20210830.pdf?did=18878&prodName=RN2410 Description: TRANS PREBIAS PNP 50V SMINI
Packaging: Cut Tape (CT)
Package / Case: TO-236-3, SC-59, SOT-23-3
Mounting Type: Surface Mount
Transistor Type: PNP - Pre-Biased
Vce Saturation (Max) @ Ib, Ic: 300mV @ 250µA, 5mA
Current - Collector Cutoff (Max): 100nA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce: 120 @ 1mA, 5V
Supplier Device Package: S-Mini
Current - Collector (Ic) (Max): 100 mA
Voltage - Collector Emitter Breakdown (Max): 50 V
Power - Max: 200 mW
Frequency - Transition: 200 MHz
Resistor - Base (R1): 4.7 kOhms
на замовлення 200 шт:
термін постачання 21-31 дні (днів)
27+11.91 грн
44+7.03 грн
100+4.33 грн
Мінімальне замовлення: 27
В кошику  од. на суму  грн.
RN2410,LXHF RN2410,LXHF Toshiba Semiconductor and Storage RN2410_datasheet_en_20210830.pdf?did=18878&prodName=RN2410 Description: TRANS PREBIAS PNP 50V SMINI
Packaging: Tape & Reel (TR)
Package / Case: TO-236-3, SC-59, SOT-23-3
Mounting Type: Surface Mount
Transistor Type: PNP - Pre-Biased
Vce Saturation (Max) @ Ib, Ic: 300mV @ 250µA, 5mA
Current - Collector Cutoff (Max): 100nA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce: 120 @ 1mA, 5V
Supplier Device Package: S-Mini
Grade: Automotive
Current - Collector (Ic) (Max): 100 mA
Voltage - Collector Emitter Breakdown (Max): 50 V
Power - Max: 200 mW
Frequency - Transition: 200 MHz
Resistor - Base (R1): 4.7 kOhms
Qualification: AEC-Q101
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RN2410,LXHF RN2410,LXHF Toshiba Semiconductor and Storage RN2410_datasheet_en_20210830.pdf?did=18878&prodName=RN2410 Description: TRANS PREBIAS PNP 50V SMINI
Packaging: Cut Tape (CT)
Package / Case: TO-236-3, SC-59, SOT-23-3
Mounting Type: Surface Mount
Transistor Type: PNP - Pre-Biased
Vce Saturation (Max) @ Ib, Ic: 300mV @ 250µA, 5mA
Current - Collector Cutoff (Max): 100nA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce: 120 @ 1mA, 5V
Supplier Device Package: S-Mini
Grade: Automotive
Current - Collector (Ic) (Max): 100 mA
Voltage - Collector Emitter Breakdown (Max): 50 V
Power - Max: 200 mW
Frequency - Transition: 200 MHz
Resistor - Base (R1): 4.7 kOhms
Qualification: AEC-Q101
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TC74HC21AF(EL,F) Toshiba Semiconductor and Storage docget.jsp?did=12794&prodName=TC74HC21AF Description: IC GATE AND 2CH 4-INP 14SOIC
Packaging: Tape & Reel (TR)
Package / Case: 14-SOIC (0.209", 5.30mm Width)
Mounting Type: Surface Mount
Logic Type: AND Gate
Operating Temperature: -40°C ~ 85°C
Voltage - Supply: 2V ~ 6V
Current - Output High, Low: 5.2mA, 5.2mA
Number of Inputs: 4
Supplier Device Package: 14-SOP
Input Logic Level - High: 1.5V ~ 4.2V
Input Logic Level - Low: 0.5V ~ 1.8V
Max Propagation Delay @ V, Max CL: 17ns @ 6V, 50pF
Number of Circuits: 2
Current - Quiescent (Max): 1 µA
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TRS10N120HB,S1Q TRS10N120HB,S1Q Toshiba Semiconductor and Storage docget.jsp?did=158263&prodName=TRS10N120HB Description: DIODE ARRAY SIC 1200V 18A TO-247
Packaging: Tube
Package / Case: TO-247-3
Mounting Type: Through Hole
Speed: No Recovery Time > 500mA (Io)
Reverse Recovery Time (trr): 0 ns
Technology: SiC (Silicon Carbide) Schottky
Diode Configuration: 1 Pair Common Cathode
Current - Average Rectified (Io) (per Diode): 18A
Supplier Device Package: TO-247
Operating Temperature - Junction: 175°C
Voltage - DC Reverse (Vr) (Max): 1200 V
Voltage - Forward (Vf) (Max) @ If: 1.45 V @ 5 A
Current - Reverse Leakage @ Vr: 50 µA @ 1200 V
на замовлення 60 шт:
термін постачання 21-31 дні (днів)
1+657.34 грн
30+417.36 грн
В кошику  од. на суму  грн.
DF5A6.8LJE,LM DF5A6.8LJE,LM Toshiba Semiconductor and Storage DF5A6.8LJE_datasheet_en_20140301.pdf?did=22265&prodName=DF5A6.8LJE Description: TVS DIODE 5VWM ESV
Packaging: Tape & Reel (TR)
Package / Case: SOT-553
Mounting Type: Surface Mount
Type: Zener
Applications: General Purpose
Capacitance @ Frequency: 6pF @ 1MHz
Voltage - Reverse Standoff (Typ): 5V
Supplier Device Package: ESV
Unidirectional Channels: 4
Voltage - Breakdown (Min): 6.5V
Power Line Protection: No
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DF5A6.8LJE,LM DF5A6.8LJE,LM Toshiba Semiconductor and Storage DF5A6.8LJE_datasheet_en_20140301.pdf?did=22265&prodName=DF5A6.8LJE Description: TVS DIODE 5VWM ESV
Packaging: Cut Tape (CT)
Package / Case: SOT-553
Mounting Type: Surface Mount
Type: Zener
Applications: General Purpose
Capacitance @ Frequency: 6pF @ 1MHz
Voltage - Reverse Standoff (Typ): 5V
Supplier Device Package: ESV
Unidirectional Channels: 4
Voltage - Breakdown (Min): 6.5V
Power Line Protection: No
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TLP3083F(D4,TP4F TLP3083F(D4,TP4F Toshiba Semiconductor and Storage TLP3083F_datasheet_en_20200217.pdf?did=30348&prodName=TLP3083F Description: PHOTOTRIAC; ZVC; WIDE CREEPAGE;
Packaging: Tape & Reel (TR)
Package / Case: 6-SMD, Gull Wing, 5 Leads
Output Type: Triac
Mounting Type: Surface Mount
Operating Temperature: -40°C ~ 100°C
Voltage - Forward (Vf) (Typ): 1.15V
Voltage - Isolation: 5000Vrms
Approval Agency: CQC, CSA, cUL, UL, VDE
Current - Hold (Ih): 600µA
Supplier Device Package: 6-SMD
Zero Crossing Circuit: Yes
Static dV/dt (Min): 2kV/µs (Typ)
Current - LED Trigger (Ift) (Max): 5mA
Number of Channels: 1
Current - On State (It (RMS)) (Max): 100 mA
Voltage - Off State: 800 V
Current - DC Forward (If) (Max): 50 mA
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TLP3083F(D4,TP4F TLP3083F(D4,TP4F Toshiba Semiconductor and Storage TLP3083F_datasheet_en_20200217.pdf?did=30348&prodName=TLP3083F Description: PHOTOTRIAC; ZVC; WIDE CREEPAGE;
Packaging: Cut Tape (CT)
Package / Case: 6-SMD, Gull Wing, 5 Leads
Output Type: Triac
Mounting Type: Surface Mount
Operating Temperature: -40°C ~ 100°C
Voltage - Forward (Vf) (Typ): 1.15V
Voltage - Isolation: 5000Vrms
Approval Agency: CQC, CSA, cUL, UL, VDE
Current - Hold (Ih): 600µA
Supplier Device Package: 6-SMD
Zero Crossing Circuit: Yes
Static dV/dt (Min): 2kV/µs (Typ)
Current - LED Trigger (Ift) (Max): 5mA
Number of Channels: 1
Current - On State (It (RMS)) (Max): 100 mA
Voltage - Off State: 800 V
Current - DC Forward (If) (Max): 50 mA
на замовлення 975 шт:
термін постачання 21-31 дні (днів)
3+147.66 грн
10+91.59 грн
100+65.66 грн
500+52.04 грн
Мінімальне замовлення: 3
В кошику  од. на суму  грн.
TLP3083F(D4,LF4F TLP3083F(D4,LF4F Toshiba Semiconductor and Storage TLP3083F_datasheet_en_20200217.pdf?did=30348&prodName=TLP3083F Description: PHOTOTRIAC; ZVC; WIDE CREEPAGE;
Packaging: Tube
Package / Case: 6-SMD, Gull Wing, 5 Leads
Output Type: Triac
Mounting Type: Surface Mount
Operating Temperature: -40°C ~ 100°C
Voltage - Forward (Vf) (Typ): 1.15V
Voltage - Isolation: 5000Vrms
Approval Agency: CQC, CSA, cUL, UL, VDE
Current - Hold (Ih): 600µA
Supplier Device Package: 6-SMD
Zero Crossing Circuit: Yes
Static dV/dt (Min): 2kV/µs (Typ)
Current - LED Trigger (Ift) (Max): 5mA
Number of Channels: 1
Current - On State (It (RMS)) (Max): 100 mA
Voltage - Off State: 800 V
Current - DC Forward (If) (Max): 50 mA
на замовлення 47 шт:
термін постачання 21-31 дні (днів)
3+147.66 грн
Мінімальне замовлення: 3
В кошику  од. на суму  грн.
TLP3083F(D4,F TLP3083F(D4,F Toshiba Semiconductor and Storage TLP3083_datasheet_en_20200217.pdf?did=30348&prodName=TLP3083 Description: PHOTOCOUPLER
Packaging: Tube
Package / Case: 6-DIP (0.400", 10.16mm), 5 Leads
Output Type: Triac
Mounting Type: Through Hole
Operating Temperature: -40°C ~ 100°C
Voltage - Forward (Vf) (Typ): 1.15V
Voltage - Isolation: 5000Vrms
Approval Agency: CQC, CSA, cUL, UL, VDE
Current - Hold (Ih): 600µA
Supplier Device Package: 6-DIP
Zero Crossing Circuit: Yes
Static dV/dt (Min): 2kV/µs (Typ)
Current - LED Trigger (Ift) (Max): 5mA
Number of Channels: 1
Current - On State (It (RMS)) (Max): 100 mA
Voltage - Off State: 800 V
Current - DC Forward (If) (Max): 50 mA
на замовлення 23 шт:
термін постачання 21-31 дні (днів)
3+147.66 грн
Мінімальне замовлення: 3
В кошику  од. на суму  грн.
TC74ACT04FTEL TC74ACT04FTEL Toshiba Semiconductor and Storage Description: IC INVERTER 6CH 1IN 14TSSOP
Packaging: Cut Tape (CT)
Package / Case: 14-TSSOP (0.173", 4.40mm Width)
Mounting Type: Surface Mount
Logic Type: Inverter
Operating Temperature: -40°C ~ 85°C
Voltage - Supply: 4.5V ~ 5.5V
Current - Output High, Low: 24mA, 24mA
Number of Inputs: 1
Supplier Device Package: 14-TSSOP
Input Logic Level - High: 2V
Input Logic Level - Low: 0.8V
Max Propagation Delay @ V, Max CL: 7.9ns @ 5V, 50pF
Number of Circuits: 6
Current - Quiescent (Max): 4 µA
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TC74VHC14FK(EL,K) TC74VHC14FK(EL,K) Toshiba Semiconductor and Storage Description: IC INVERTER 6CH 1-INP 14VSSOP
Features: Schmitt Trigger
Packaging: Cut Tape (CT)
Package / Case: 14-VFSOP (0.118", 3.00mm Width)
Mounting Type: Surface Mount
Logic Type: Inverter
Operating Temperature: -40°C ~ 85°C
Voltage - Supply: 2V ~ 5.5V
Current - Output High, Low: 8mA, 8mA
Number of Inputs: 1
Supplier Device Package: 14-VSSOP
Input Logic Level - High: 2.2V ~ 3.85V
Input Logic Level - Low: 0.9V ~ 1.65V
Max Propagation Delay @ V, Max CL: 10.6ns @ 5V, 50pF
Number of Circuits: 6
Current - Quiescent (Max): 2 µA
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XPH1R104PS,L1XHQ Toshiba Semiconductor and Storage docget.jsp?did=139827&prodName=XPH1R104PS Description: 40V UMOS9-H SOP ADVANCE
Packaging: Tape & Reel (TR)
Package / Case: 8-PowerVDFN
Mounting Type: Surface Mount
Operating Temperature: 175°C
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 120A (Ta)
Rds On (Max) @ Id, Vgs: 1.14mOhm @ 60A, 10V
Power Dissipation (Max): 3W (Ta), 132W (Tc)
Vgs(th) (Max) @ Id: 3V @ 500µA
Supplier Device Package: 8-SOP Advance (5x5)
Grade: Automotive
Drive Voltage (Max Rds On, Min Rds On): 6V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 40 V
Gate Charge (Qg) (Max) @ Vgs: 55 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 4560 pF @ 10 V
Qualification: AEC-Q101
на замовлення 5000 шт:
термін постачання 21-31 дні (днів)
5000+43.45 грн
Мінімальне замовлення: 5000
В кошику  од. на суму  грн.
XPH1R104PS,L1XHQ Toshiba Semiconductor and Storage docget.jsp?did=139827&prodName=XPH1R104PS Description: 40V UMOS9-H SOP ADVANCE
Packaging: Cut Tape (CT)
Package / Case: 8-PowerVDFN
Mounting Type: Surface Mount
Operating Temperature: 175°C
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 120A (Ta)
Rds On (Max) @ Id, Vgs: 1.14mOhm @ 60A, 10V
Power Dissipation (Max): 3W (Ta), 132W (Tc)
Vgs(th) (Max) @ Id: 3V @ 500µA
Supplier Device Package: 8-SOP Advance (5x5)
Grade: Automotive
Drive Voltage (Max Rds On, Min Rds On): 6V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 40 V
Gate Charge (Qg) (Max) @ Vgs: 55 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 4560 pF @ 10 V
Qualification: AEC-Q101
на замовлення 5000 шт:
термін постачання 21-31 дні (днів)
2+169.10 грн
10+101.91 грн
25+85.96 грн
100+63.71 грн
250+55.38 грн
500+50.26 грн
1000+45.22 грн
2500+40.67 грн
Мінімальне замовлення: 2
В кошику  од. на суму  грн.
TCK1024G,LF TCK1024G,LF Toshiba Semiconductor and Storage TCK22946G_datasheet_en_20220609.pdf?did=36710&prodName=TCK22946G Description: IC PWR SWITCH P-CHAN 1:1 WCSP6E
Features: Load Discharge
Packaging: Tape & Reel (TR)
Package / Case: 6-UFBGA, WLCSP
Output Type: P-Channel
Mounting Type: Surface Mount
Number of Outputs: 1
Interface: On/Off
Switch Type: General Purpose
Operating Temperature: -40°C ~ 85°C (TA)
Output Configuration: High Side
Rds On (Typ): 31mOhm
Input Type: Non-Inverting
Voltage - Load: 1.4V ~ 5.5V
Current - Output (Max): 1.54A
Ratio - Input:Output: 1:1
Supplier Device Package: 6-WCSPE (0.80x1.2)
Fault Protection: Current Limiting (Fixed), Over Temperature, Reverse Current
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TCK1024G,LF TCK1024G,LF Toshiba Semiconductor and Storage TCK22946G_datasheet_en_20220609.pdf?did=36710&prodName=TCK22946G Description: IC PWR SWITCH P-CHAN 1:1 WCSP6E
Features: Load Discharge
Packaging: Cut Tape (CT)
Package / Case: 6-UFBGA, WLCSP
Output Type: P-Channel
Mounting Type: Surface Mount
Number of Outputs: 1
Interface: On/Off
Switch Type: General Purpose
Operating Temperature: -40°C ~ 85°C (TA)
Output Configuration: High Side
Rds On (Typ): 31mOhm
Input Type: Non-Inverting
Voltage - Load: 1.4V ~ 5.5V
Current - Output (Max): 1.54A
Ratio - Input:Output: 1:1
Supplier Device Package: 6-WCSPE (0.80x1.2)
Fault Protection: Current Limiting (Fixed), Over Temperature, Reverse Current
на замовлення 4448 шт:
термін постачання 21-31 дні (днів)
6+60.34 грн
10+36.08 грн
100+23.35 грн
500+16.75 грн
1000+15.08 грн
2000+13.68 грн
Мінімальне замовлення: 6
В кошику  од. на суму  грн.
XCUZ30V,H3XHF(B XCUZ30V,H3XHF(B Toshiba Semiconductor and Storage docget.jsp?did=153645&prodName=XCUZ30V Description: 30 V ZENER DIODEAEC-Q, SOD-323(U
Packaging: Tape & Reel (TR)
Package / Case: SC-76, SOD-323
Mounting Type: Surface Mount
Type: Zener
Operating Temperature: 150°C (TJ)
Capacitance @ Frequency: 21pF @ 1MHz
Current - Peak Pulse (10/1000µs): 4A (8/20µs)
Voltage - Reverse Standoff (Typ): 23V (Max)
Supplier Device Package: USC
Unidirectional Channels: 1
Voltage - Breakdown (Min): 28V
Voltage - Clamping (Max) @ Ipp: 47.5V (Typ)
Power - Peak Pulse: 200W
Power Line Protection: No
Grade: Automotive
Qualification: AEC-Q101
на замовлення 6000 шт:
термін постачання 21-31 дні (днів)
3000+2.33 грн
6000+2.00 грн
Мінімальне замовлення: 3000
В кошику  од. на суму  грн.
XCUZ30V,H3XHF(B XCUZ30V,H3XHF(B Toshiba Semiconductor and Storage docget.jsp?did=153645&prodName=XCUZ30V Description: 30 V ZENER DIODEAEC-Q, SOD-323(U
Packaging: Cut Tape (CT)
Package / Case: SC-76, SOD-323
Mounting Type: Surface Mount
Type: Zener
Operating Temperature: 150°C (TJ)
Capacitance @ Frequency: 21pF @ 1MHz
Current - Peak Pulse (10/1000µs): 4A (8/20µs)
Voltage - Reverse Standoff (Typ): 23V (Max)
Supplier Device Package: USC
Unidirectional Channels: 1
Voltage - Breakdown (Min): 28V
Voltage - Clamping (Max) @ Ipp: 47.5V (Typ)
Power - Peak Pulse: 200W
Power Line Protection: No
Grade: Automotive
Qualification: AEC-Q101
на замовлення 6000 шт:
термін постачання 21-31 дні (днів)
23+14.29 грн
37+8.33 грн
100+5.15 грн
500+3.53 грн
1000+3.10 грн
Мінімальне замовлення: 23
В кошику  од. на суму  грн.
2SC4213-A(TE85L,F) 2SC4213-A(TE85L,F) Toshiba Semiconductor and Storage 2SC4213_datasheet_en_20210625.pdf?did=19305&prodName=2SC4213 Description: TRANS NPN 20V 0.3A SC-70
Packaging: Cut Tape (CT)
Package / Case: SC-70, SOT-323
Mounting Type: Surface Mount
Transistor Type: NPN
Operating Temperature: 125°C (TJ)
Vce Saturation (Max) @ Ib, Ic: 100mV @ 3mA, 30A
Current - Collector Cutoff (Max): 100nA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce: 200 @ 4mA, 2V
Frequency - Transition: 30MHz
Supplier Device Package: SC-70
Current - Collector (Ic) (Max): 300 mA
Voltage - Collector Emitter Breakdown (Max): 20 V
Power - Max: 100 mW
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XCUZ6V2,H3XHF(B XCUZ6V2,H3XHF(B Toshiba Semiconductor and Storage docget.jsp?did=153645&prodName=XCUZ15V Description: 6.2 V ZENER DIODEAEC-Q, SOD-323(
Packaging: Tape & Reel (TR)
Package / Case: SC-76, SOD-323
Mounting Type: Surface Mount
Type: Zener
Operating Temperature: 150°C (TJ)
Capacitance @ Frequency: 105pF @ 1MHz
Current - Peak Pulse (10/1000µs): 11A (8/20µs)
Voltage - Reverse Standoff (Typ): 3V (Max)
Supplier Device Package: USC
Unidirectional Channels: 1
Voltage - Breakdown (Min): 5.8V
Voltage - Clamping (Max) @ Ipp: 10V (Typ)
Power - Peak Pulse: 175W
Power Line Protection: No
Grade: Automotive
Qualification: AEC-Q101
на замовлення 3000 шт:
термін постачання 21-31 дні (днів)
3000+2.33 грн
Мінімальне замовлення: 3000
В кошику  од. на суму  грн.
XCUZ6V2,H3XHF(B XCUZ6V2,H3XHF(B Toshiba Semiconductor and Storage docget.jsp?did=153645&prodName=XCUZ15V Description: 6.2 V ZENER DIODEAEC-Q, SOD-323(
Packaging: Cut Tape (CT)
Package / Case: SC-76, SOD-323
Mounting Type: Surface Mount
Type: Zener
Operating Temperature: 150°C (TJ)
Capacitance @ Frequency: 105pF @ 1MHz
Current - Peak Pulse (10/1000µs): 11A (8/20µs)
Voltage - Reverse Standoff (Typ): 3V (Max)
Supplier Device Package: USC
Unidirectional Channels: 1
Voltage - Breakdown (Min): 5.8V
Voltage - Clamping (Max) @ Ipp: 10V (Typ)
Power - Peak Pulse: 175W
Power Line Protection: No
Grade: Automotive
Qualification: AEC-Q101
на замовлення 5960 шт:
термін постачання 21-31 дні (днів)
23+14.29 грн
37+8.33 грн
100+5.15 грн
500+3.53 грн
1000+3.10 грн
Мінімальне замовлення: 23
В кошику  од. на суму  грн.
TLP620M(BL-TP5,E TLP620M(BL-TP5,E Toshiba Semiconductor and Storage Description: OPTOISOLATOR 5KV 1CH TRANS 4-SMD
Packaging: Tape & Reel (TR)
Package / Case: 4-SMD, Gull Wing
Output Type: Transistor
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 125°C
Voltage - Forward (Vf) (Typ): 1.25V
Input Type: AC, DC
Current - Output / Channel: 50mA
Voltage - Isolation: 5000Vrms
Current Transfer Ratio (Min): 50% @ 5mA
Vce Saturation (Max): 300mV
Current Transfer Ratio (Max): 600% @ 5mA
Supplier Device Package: 4-SMD
Voltage - Output (Max): 80V
Turn On / Turn Off Time (Typ): 3µs, 3µs
Rise / Fall Time (Typ): 2µs, 3µs
Number of Channels: 1
Current - DC Forward (If) (Max): 50 mA
товару немає в наявності
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TLP620M(D4BLT5,E TLP620M(D4BLT5,E Toshiba Semiconductor and Storage Description: OPTOISOLATOR 5KV 1CH TRANS 4-DIP
Packaging: Tape & Reel (TR)
Package / Case: 4-DIP (0.300", 7.62mm)
Output Type: Transistor
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 125°C
Voltage - Forward (Vf) (Typ): 1.25V
Input Type: AC, DC
Current - Output / Channel: 50mA
Voltage - Isolation: 5000Vrms
Current Transfer Ratio (Min): 50% @ 5mA
Vce Saturation (Max): 300mV
Current Transfer Ratio (Max): 600% @ 5mA
Supplier Device Package: 4-DIP
Voltage - Output (Max): 80V
Turn On / Turn Off Time (Typ): 3µs, 3µs
Rise / Fall Time (Typ): 2µs, 3µs
Number of Channels: 1
Current - DC Forward (If) (Max): 50 mA
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TLP620M(D4-TP5,E TLP620M(D4-TP5,E Toshiba Semiconductor and Storage Description: OPTOISOLATOR 5KV 1CH TRANS 4-SMD
Packaging: Tape & Reel (TR)
Package / Case: 4-SMD, Gull Wing
Output Type: Transistor
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 125°C
Voltage - Forward (Vf) (Typ): 1.25V
Input Type: AC, DC
Current - Output / Channel: 50mA
Voltage - Isolation: 5000Vrms
Current Transfer Ratio (Min): 50% @ 5mA
Vce Saturation (Max): 300mV
Current Transfer Ratio (Max): 600% @ 5mA
Supplier Device Package: 4-SMD
Voltage - Output (Max): 80V
Turn On / Turn Off Time (Typ): 3µs, 3µs
Rise / Fall Time (Typ): 2µs, 3µs
Number of Channels: 1
Current - DC Forward (If) (Max): 50 mA
товару немає в наявності
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TLP620M(D4BLT1,E TLP620M(D4BLT1,E Toshiba Semiconductor and Storage Description: OPTOISOLATOR 5KV 1CH TRANS 4-DIP
Packaging: Tape & Reel (TR)
Package / Case: 4-DIP (0.300", 7.62mm)
Output Type: Transistor
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 125°C
Voltage - Forward (Vf) (Typ): 1.25V
Input Type: AC, DC
Current - Output / Channel: 50mA
Voltage - Isolation: 5000Vrms
Current Transfer Ratio (Min): 50% @ 5mA
Vce Saturation (Max): 300mV
Current Transfer Ratio (Max): 600% @ 5mA
Supplier Device Package: 4-DIP
Voltage - Output (Max): 80V
Turn On / Turn Off Time (Typ): 3µs, 3µs
Rise / Fall Time (Typ): 2µs, 3µs
Number of Channels: 1
Current - DC Forward (If) (Max): 50 mA
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TLP620M(D4GBT5,E TLP620M(D4GBT5,E Toshiba Semiconductor and Storage Description: OPTOISOLATOR 5KV 1CH TRANS 4-DIP
Packaging: Tape & Reel (TR)
Package / Case: 4-DIP (0.300", 7.62mm)
Output Type: Transistor
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 125°C
Voltage - Forward (Vf) (Typ): 1.25V
Input Type: AC, DC
Current - Output / Channel: 50mA
Voltage - Isolation: 5000Vrms
Current Transfer Ratio (Min): 100% @ 5mA
Vce Saturation (Max): 300mV
Current Transfer Ratio (Max): 600% @ 5mA
Supplier Device Package: 4-DIP
Voltage - Output (Max): 80V
Turn On / Turn Off Time (Typ): 3µs, 3µs
Rise / Fall Time (Typ): 2µs, 3µs
Number of Channels: 1
Current - DC Forward (If) (Max): 50 mA
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TLP620M(D4GRT5,E TLP620M(D4GRT5,E Toshiba Semiconductor and Storage Description: OPTOISOLATOR 5KV 1CH TRANS 4-DIP
Packaging: Tape & Reel (TR)
Package / Case: 4-DIP (0.300", 7.62mm)
Output Type: Transistor
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 125°C
Voltage - Forward (Vf) (Typ): 1.25V
Input Type: AC, DC
Current - Output / Channel: 50mA
Voltage - Isolation: 5000Vrms
Current Transfer Ratio (Min): 50% @ 5mA
Vce Saturation (Max): 300mV
Current Transfer Ratio (Max): 600% @ 5mA
Supplier Device Package: 4-DIP
Voltage - Output (Max): 80V
Turn On / Turn Off Time (Typ): 3µs, 3µs
Rise / Fall Time (Typ): 2µs, 3µs
Number of Channels: 1
Current - DC Forward (If) (Max): 50 mA
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TLP620M(D4GRT1,E TLP620M(D4GRT1,E Toshiba Semiconductor and Storage Description: OPTOISOLATOR 5KV 1CH TRANS 4-DIP
Packaging: Tape & Reel (TR)
Package / Case: 4-DIP (0.300", 7.62mm)
Output Type: Transistor
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 125°C
Voltage - Forward (Vf) (Typ): 1.25V
Input Type: AC, DC
Current - Output / Channel: 50mA
Voltage - Isolation: 5000Vrms
Current Transfer Ratio (Min): 50% @ 5mA
Vce Saturation (Max): 300mV
Current Transfer Ratio (Max): 600% @ 5mA
Supplier Device Package: 4-DIP
Voltage - Output (Max): 80V
Turn On / Turn Off Time (Typ): 3µs, 3µs
Rise / Fall Time (Typ): 2µs, 3µs
Number of Channels: 1
Current - DC Forward (If) (Max): 50 mA
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TLP620M(GR-TP1,E TLP620M(GR-TP1,E Toshiba Semiconductor and Storage Description: OPTOISOLATOR 5KV 1CH TRANS 4-SMD
Packaging: Tape & Reel (TR)
Package / Case: 4-SMD (0.300", 7.62mm)
Output Type: Transistor
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 125°C
Voltage - Forward (Vf) (Typ): 1.25V
Input Type: AC, DC
Current - Output / Channel: 50mA
Voltage - Isolation: 5000Vrms
Current Transfer Ratio (Min): 50% @ 5mA
Vce Saturation (Max): 300mV
Current Transfer Ratio (Max): 600% @ 5mA
Supplier Device Package: 4-SMD
Voltage - Output (Max): 80V
Turn On / Turn Off Time (Typ): 3µs, 3µs
Rise / Fall Time (Typ): 2µs, 3µs
Number of Channels: 1
Current - DC Forward (If) (Max): 50 mA
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TLP620M(D4Y-T1,E TLP620M(D4Y-T1,E Toshiba Semiconductor and Storage Description: OPTOISOLATOR 5KV 1CH TRANS 4-DIP
Packaging: Tape & Reel (TR)
Package / Case: 4-DIP (0.300", 7.62mm)
Output Type: Transistor
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 125°C
Voltage - Forward (Vf) (Typ): 1.25V
Input Type: AC, DC
Current - Output / Channel: 50mA
Voltage - Isolation: 5000Vrms
Current Transfer Ratio (Min): 50% @ 5mA
Vce Saturation (Max): 300mV
Current Transfer Ratio (Max): 600% @ 5mA
Supplier Device Package: 4-DIP
Voltage - Output (Max): 80V
Turn On / Turn Off Time (Typ): 3µs, 3µs
Rise / Fall Time (Typ): 2µs, 3µs
Number of Channels: 1
Current - DC Forward (If) (Max): 50 mA
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TLP620M(D4GBT1,E TLP620M(D4GBT1,E Toshiba Semiconductor and Storage Description: OPTOISOLATOR 5KV 1CH TRANS 4-DIP
Packaging: Tape & Reel (TR)
Package / Case: 4-DIP (0.300", 7.62mm)
Output Type: Transistor
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 125°C
Voltage - Forward (Vf) (Typ): 1.25V
Input Type: AC, DC
Current - Output / Channel: 50mA
Voltage - Isolation: 5000Vrms
Current Transfer Ratio (Min): 100% @ 5mA
Vce Saturation (Max): 300mV
Current Transfer Ratio (Max): 600% @ 5mA
Supplier Device Package: 4-DIP
Voltage - Output (Max): 80V
Turn On / Turn Off Time (Typ): 3µs, 3µs
Rise / Fall Time (Typ): 2µs, 3µs
Number of Channels: 1
Current - DC Forward (If) (Max): 50 mA
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TLP620M(BL-TP1,E TLP620M(BL-TP1,E Toshiba Semiconductor and Storage Description: OPTOISOLATOR 5KV 1CH TRANS 4-SMD
Packaging: Tape & Reel (TR)
Package / Case: 4-SMD (0.300", 7.62mm)
Output Type: Transistor
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 125°C
Voltage - Forward (Vf) (Typ): 1.25V
Input Type: AC, DC
Current - Output / Channel: 50mA
Voltage - Isolation: 5000Vrms
Current Transfer Ratio (Min): 50% @ 5mA
Vce Saturation (Max): 300mV
Current Transfer Ratio (Max): 600% @ 5mA
Supplier Device Package: 4-SMD
Voltage - Output (Max): 80V
Turn On / Turn Off Time (Typ): 3µs, 3µs
Rise / Fall Time (Typ): 2µs, 3µs
Number of Channels: 1
Current - DC Forward (If) (Max): 50 mA
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TLP620M(GB-TP5,E TLP620M(GB-TP5,E Toshiba Semiconductor and Storage Description: OPTOISOLATOR 5KV 1CH TRANS 4-SMD
Packaging: Tape & Reel (TR)
Package / Case: 4-SMD, Gull Wing
Output Type: Transistor
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 125°C
Voltage - Forward (Vf) (Typ): 1.25V
Input Type: AC, DC
Current - Output / Channel: 50mA
Voltage - Isolation: 5000Vrms
Current Transfer Ratio (Min): 100% @ 5mA
Vce Saturation (Max): 300mV
Current Transfer Ratio (Max): 600% @ 5mA
Supplier Device Package: 4-SMD
Voltage - Output (Max): 80V
Turn On / Turn Off Time (Typ): 3µs, 3µs
Rise / Fall Time (Typ): 2µs, 3µs
Number of Channels: 1
Current - DC Forward (If) (Max): 50 mA
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TLP620M(D4Y-T5,E TLP620M(D4Y-T5,E Toshiba Semiconductor and Storage Description: OPTOISOLATOR 5KV 1CH TRANS 4-DIP
Packaging: Tape & Reel (TR)
Package / Case: 4-DIP (0.300", 7.62mm)
Output Type: Transistor
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 125°C
Voltage - Forward (Vf) (Typ): 1.25V
Input Type: AC, DC
Current - Output / Channel: 50mA
Voltage - Isolation: 5000Vrms
Current Transfer Ratio (Min): 50% @ 5mA
Vce Saturation (Max): 300mV
Current Transfer Ratio (Max): 600% @ 5mA
Supplier Device Package: 4-DIP
Voltage - Output (Max): 80V
Turn On / Turn Off Time (Typ): 3µs, 3µs
Rise / Fall Time (Typ): 2µs, 3µs
Number of Channels: 1
Current - DC Forward (If) (Max): 50 mA
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RN1410,LF RN1410,LF Toshiba Semiconductor and Storage docget.jsp?did=18792&prodName=RN1410 Description: TRANS PREBIAS NPN 50V SMINI
Packaging: Tape & Reel (TR)
Package / Case: TO-236-3, SC-59, SOT-23-3
Mounting Type: Surface Mount
Transistor Type: NPN - Pre-Biased
Vce Saturation (Max) @ Ib, Ic: 300mV @ 250µA, 5mA
Current - Collector Cutoff (Max): 100nA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce: 120 @ 1mA, 5V
Supplier Device Package: S-Mini
Current - Collector (Ic) (Max): 100 mA
Voltage - Collector Emitter Breakdown (Max): 50 V
Power - Max: 200 mW
Frequency - Transition: 250 MHz
Resistor - Base (R1): 4.7 kOhms
на замовлення 6000 шт:
термін постачання 21-31 дні (днів)
3000+2.41 грн
6000+2.07 грн
Мінімальне замовлення: 3000
В кошику  од. на суму  грн.
RN1410,LF RN1410,LF Toshiba Semiconductor and Storage docget.jsp?did=18792&prodName=RN1410 Description: TRANS PREBIAS NPN 50V SMINI
Packaging: Cut Tape (CT)
Package / Case: TO-236-3, SC-59, SOT-23-3
Mounting Type: Surface Mount
Transistor Type: NPN - Pre-Biased
Vce Saturation (Max) @ Ib, Ic: 300mV @ 250µA, 5mA
Current - Collector Cutoff (Max): 100nA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce: 120 @ 1mA, 5V
Supplier Device Package: S-Mini
Current - Collector (Ic) (Max): 100 mA
Voltage - Collector Emitter Breakdown (Max): 50 V
Power - Max: 200 mW
Frequency - Transition: 250 MHz
Resistor - Base (R1): 4.7 kOhms
на замовлення 10350 шт:
термін постачання 21-31 дні (днів)
27+11.91 грн
43+7.19 грн
100+4.43 грн
500+3.02 грн
1000+2.65 грн
Мінімальне замовлення: 27
В кошику  од. на суму  грн.
TLP2370(E TLP2370(E Toshiba Semiconductor and Storage TLP2370_datasheet_en_20170609.pdf?did=30500&prodName=TLP2370 Description: HIGH SPEED PHOTOCOUPLER; 5PIN SO
Packaging: Tube
Package / Case: 6-SOIC (0.179", 4.55mm Width), 5 Leads
Output Type: Push-Pull, Totem Pole
Mounting Type: Surface Mount
Operating Temperature: -40°C ~ 125°C
Voltage - Supply: 2.7V ~ 5.5V
Voltage - Forward (Vf) (Typ): 1.5V
Data Rate: 20Mbps
Input Type: DC
Voltage - Isolation: 3750Vrms
Current - DC Forward (If) (Max): 8mA
Inputs - Side 1/Side 2: 1/0
Supplier Device Package: 6-SO, 5 Lead
Rise / Fall Time (Typ): 3ns, 2ns
Common Mode Transient Immunity (Min): 20kV/µs
Propagation Delay tpLH / tpHL (Max): 60ns, 60ns
Number of Channels: 1
Current - Output / Channel: 10 mA
на замовлення 125 шт:
термін постачання 21-31 дні (днів)
3+136.55 грн
10+84.25 грн
125+58.28 грн
Мінімальне замовлення: 3
В кошику  од. на суму  грн.
XPQR8308QB,LXHQ docget.jsp?did=152781&prodName=XPQR8308QB
XPQR8308QB,LXHQ
Виробник: Toshiba Semiconductor and Storage
Description: 80V UMOS10 L-TOGL 0.83MOHM
Packaging: Tape & Reel (TR)
Package / Case: 8-PowerBSFN
Mounting Type: Surface Mount
Operating Temperature: 175°C
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 350A (Ta)
Rds On (Max) @ Id, Vgs: 0.83mOhm @ 175A, 10V
Power Dissipation (Max): 750W (Tc)
Vgs(th) (Max) @ Id: 3.5V @ 3.2mA
Supplier Device Package: L-TOGL™
Grade: Automotive
Drive Voltage (Max Rds On, Min Rds On): 6V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 80 V
Gate Charge (Qg) (Max) @ Vgs: 305 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 24700 pF @ 10 V
Qualification: AEC-Q101
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XPQR8308QB,LXHQ docget.jsp?did=152781&prodName=XPQR8308QB
XPQR8308QB,LXHQ
Виробник: Toshiba Semiconductor and Storage
Description: 80V UMOS10 L-TOGL 0.83MOHM
Packaging: Cut Tape (CT)
Package / Case: 8-PowerBSFN
Mounting Type: Surface Mount
Operating Temperature: 175°C
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 350A (Ta)
Rds On (Max) @ Id, Vgs: 0.83mOhm @ 175A, 10V
Power Dissipation (Max): 750W (Tc)
Vgs(th) (Max) @ Id: 3.5V @ 3.2mA
Supplier Device Package: L-TOGL™
Grade: Automotive
Drive Voltage (Max Rds On, Min Rds On): 6V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 80 V
Gate Charge (Qg) (Max) @ Vgs: 305 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 24700 pF @ 10 V
Qualification: AEC-Q101
на замовлення 1052 шт:
термін постачання 21-31 дні (днів)
Кількість Ціна
1+450.93 грн
10+285.46 грн
25+246.75 грн
100+190.46 грн
250+170.28 грн
500+157.87 грн
В кошику  од. на суму  грн.
TLP171A(TP,F TLP171A_datasheet_en_20230620.pdf?did=13862&prodName=TLP171A
Виробник: Toshiba Semiconductor and Storage
Description: SSR RELAY SPST-NO 400MA 0-60V
Packaging: Tape & Reel (TR)
Package / Case: 4-SOP (0.173", 4.40mm)
Output Type: AC, DC
Mounting Type: Surface Mount
Voltage - Input: 1.27VDC
Circuit: SPST-NO (1 Form A)
Operating Temperature: -40°C ~ 85°C
Termination Style: Gull Wing
Load Current: 400 mA
Approval Agency: cUL, UL, VDE
Supplier Device Package: 4-SOP
Voltage - Load: 0 V ~ 60 V
On-State Resistance (Max): 2 Ohms
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TLP171A(TP,F TLP171A_datasheet_en_20230620.pdf?did=13862&prodName=TLP171A
Виробник: Toshiba Semiconductor and Storage
Description: SSR RELAY SPST-NO 400MA 0-60V
Packaging: Cut Tape (CT)
Package / Case: 4-SOP (0.173", 4.40mm)
Output Type: AC, DC
Mounting Type: Surface Mount
Voltage - Input: 1.27VDC
Circuit: SPST-NO (1 Form A)
Operating Temperature: -40°C ~ 85°C
Termination Style: Gull Wing
Load Current: 400 mA
Approval Agency: cUL, UL, VDE
Supplier Device Package: 4-SOP
Voltage - Load: 0 V ~ 60 V
On-State Resistance (Max): 2 Ohms
на замовлення 1428 шт:
термін постачання 21-31 дні (днів)
Кількість Ціна
3+130.99 грн
10+110.09 грн
25+104.31 грн
50+93.97 грн
100+90.23 грн
250+85.50 грн
500+80.75 грн
1000+77.52 грн
Мінімальне замовлення: 3
В кошику  од. на суму  грн.
TC7WH125FU,LJ(CT TC7WH125FU_datasheet_en_20200205.pdf?did=20134&prodName=TC7WH125FU
TC7WH125FU,LJ(CT
Виробник: Toshiba Semiconductor and Storage
Description: IC BUFFER NON-INVERT 5.5V SM8
Packaging: Tape & Reel (TR)
Package / Case: 8-TSSOP, 8-MSOP (0.110", 2.80mm Width)
Output Type: 3-State
Mounting Type: Surface Mount
Number of Elements: 2
Logic Type: Buffer, Non-Inverting
Operating Temperature: -40°C ~ 85°C (TA)
Voltage - Supply: 2V ~ 5.5V
Number of Bits per Element: 1
Current - Output High, Low: 8mA, 8mA
Supplier Device Package: 8-SSOP
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TC7WH125FU,LJ(CT TC7WH125FU_datasheet_en_20200205.pdf?did=20134&prodName=TC7WH125FU
TC7WH125FU,LJ(CT
Виробник: Toshiba Semiconductor and Storage
Description: IC BUFFER NON-INVERT 5.5V SM8
Packaging: Cut Tape (CT)
Package / Case: 8-TSSOP, 8-MSOP (0.110", 2.80mm Width)
Output Type: 3-State
Mounting Type: Surface Mount
Number of Elements: 2
Logic Type: Buffer, Non-Inverting
Operating Temperature: -40°C ~ 85°C (TA)
Voltage - Supply: 2V ~ 5.5V
Number of Bits per Element: 1
Current - Output High, Low: 8mA, 8mA
Supplier Device Package: 8-SSOP
на замовлення 2542 шт:
термін постачання 21-31 дні (днів)
Кількість Ціна
24+13.50 грн
36+8.64 грн
41+7.55 грн
100+6.03 грн
250+5.52 грн
500+5.22 грн
1000+4.88 грн
Мінімальне замовлення: 24
В кошику  од. на суму  грн.
TB9083FTG(EL) docget.jsp?did=90360&prodName=TB9083FTG
Виробник: Toshiba Semiconductor and Storage
Description: AEC-Q100 3-PHASE BLDC GATE DRV 4
Packaging: Tape & Reel (TR)
Package / Case: 48-VFQFN Exposed Pad
Mounting Type: Surface Mount, Wettable Flank
Function: Controller - Current Management
Interface: SPI
Operating Temperature: -40°C ~ 150°C (TA)
Output Configuration: Half Bridge (3)
Voltage - Supply: 3V ~ 5.5V, 4.5V ~ 28V
Applications: General Purpose
Technology: Power MOSFET
Supplier Device Package: 48-VQFN (7x7)
Motor Type - Stepper: Multiphase
Motor Type - AC, DC: Brushless DC (BLDC)
Grade: Automotive
Qualification: AEC-Q100
на замовлення 3000 шт:
термін постачання 21-31 дні (днів)
Кількість Ціна
3000+310.85 грн
Мінімальне замовлення: 3000
В кошику  од. на суму  грн.
TB9083FTG(EL) docget.jsp?did=90360&prodName=TB9083FTG
Виробник: Toshiba Semiconductor and Storage
Description: AEC-Q100 3-PHASE BLDC GATE DRV 4
Packaging: Cut Tape (CT)
Package / Case: 48-VFQFN Exposed Pad
Mounting Type: Surface Mount, Wettable Flank
Function: Controller - Current Management
Interface: SPI
Operating Temperature: -40°C ~ 150°C (TA)
Output Configuration: Half Bridge (3)
Voltage - Supply: 3V ~ 5.5V, 4.5V ~ 28V
Applications: General Purpose
Technology: Power MOSFET
Supplier Device Package: 48-VQFN (7x7)
Motor Type - Stepper: Multiphase
Motor Type - AC, DC: Brushless DC (BLDC)
Grade: Automotive
Qualification: AEC-Q100
на замовлення 3008 шт:
термін постачання 21-31 дні (днів)
Кількість Ціна
1+693.86 грн
10+451.58 грн
25+395.24 грн
100+311.15 грн
250+281.80 грн
500+280.92 грн
В кошику  од. на суму  грн.
DF2B7AFU,H3F DF2B7AFU_datasheet_en_20180118.pdf?did=55588&prodName=DF2B7AFU
DF2B7AFU,H3F
Виробник: Toshiba Semiconductor and Storage
Description: TVS DIODE 5.5VWM 20VC USC
Packaging: Tape & Reel (TR)
Package / Case: SC-76, SOD-323
Mounting Type: Surface Mount
Type: Zener
Operating Temperature: 150°C (TJ)
Applications: General Purpose
Capacitance @ Frequency: 8.5pF @ 1MHz
Current - Peak Pulse (10/1000µs): 4A (8/20µs)
Voltage - Reverse Standoff (Typ): 5.5V (Max)
Supplier Device Package: USC
Bidirectional Channels: 1
Voltage - Breakdown (Min): 5.8V
Voltage - Clamping (Max) @ Ipp: 20V
Power - Peak Pulse: 80W
Power Line Protection: No
на замовлення 6000 шт:
термін постачання 21-31 дні (днів)
Кількість Ціна
3000+1.59 грн
6000+1.49 грн
Мінімальне замовлення: 3000
В кошику  од. на суму  грн.
DF2B7AFU,H3F DF2B7AFU_datasheet_en_20180118.pdf?did=55588&prodName=DF2B7AFU
DF2B7AFU,H3F
Виробник: Toshiba Semiconductor and Storage
Description: TVS DIODE 5.5VWM 20VC USC
Packaging: Cut Tape (CT)
Package / Case: SC-76, SOD-323
Mounting Type: Surface Mount
Type: Zener
Operating Temperature: 150°C (TJ)
Applications: General Purpose
Capacitance @ Frequency: 8.5pF @ 1MHz
Current - Peak Pulse (10/1000µs): 4A (8/20µs)
Voltage - Reverse Standoff (Typ): 5.5V (Max)
Supplier Device Package: USC
Bidirectional Channels: 1
Voltage - Breakdown (Min): 5.8V
Voltage - Clamping (Max) @ Ipp: 20V
Power - Peak Pulse: 80W
Power Line Protection: No
на замовлення 6809 шт:
термін постачання 21-31 дні (днів)
Кількість Ціна
37+8.73 грн
49+6.27 грн
103+2.99 грн
500+2.74 грн
1000+2.67 грн
Мінімальне замовлення: 37
В кошику  од. на суму  грн.
DF2B7AE,L3F DF2B7AE_datasheet_en_20220907.pdf?did=55583&prodName=DF2B7AE
DF2B7AE,L3F
Виробник: Toshiba Semiconductor and Storage
Description: TVS DIODE 5.5VWM 20VC ESC
Packaging: Tape & Reel (TR)
Package / Case: SC-79, SOD-523
Mounting Type: Surface Mount
Type: Zener
Operating Temperature: 150°C (TJ)
Applications: General Purpose
Capacitance @ Frequency: 8.5pF @ 1MHz
Current - Peak Pulse (10/1000µs): 4A (8/20µs)
Voltage - Reverse Standoff (Typ): 5.5V (Max)
Supplier Device Package: ESC
Bidirectional Channels: 1
Voltage - Breakdown (Min): 5.8V
Voltage - Clamping (Max) @ Ipp: 20V
Power - Peak Pulse: 80W
Power Line Protection: No
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DF2B7AE,L3F DF2B7AE_datasheet_en_20220907.pdf?did=55583&prodName=DF2B7AE
DF2B7AE,L3F
Виробник: Toshiba Semiconductor and Storage
Description: TVS DIODE 5.5VWM 20VC ESC
Packaging: Cut Tape (CT)
Package / Case: SC-79, SOD-523
Mounting Type: Surface Mount
Type: Zener
Operating Temperature: 150°C (TJ)
Applications: General Purpose
Capacitance @ Frequency: 8.5pF @ 1MHz
Current - Peak Pulse (10/1000µs): 4A (8/20µs)
Voltage - Reverse Standoff (Typ): 5.5V (Max)
Supplier Device Package: ESC
Bidirectional Channels: 1
Voltage - Breakdown (Min): 5.8V
Voltage - Clamping (Max) @ Ipp: 20V
Power - Peak Pulse: 80W
Power Line Protection: No
на замовлення 5066 шт:
термін постачання 21-31 дні (днів)
Кількість Ціна
37+8.73 грн
50+6.12 грн
100+3.13 грн
500+2.63 грн
1000+2.33 грн
2000+2.27 грн
Мінімальне замовлення: 37
В кошику  од. на суму  грн.
TRS20H120H,S1Q docget.jsp?did=158273&prodName=TRS20H120H
TRS20H120H,S1Q
Виробник: Toshiba Semiconductor and Storage
Description: DIODE SIL CARB 1200V 61A TO2472L
Packaging: Tube
Package / Case: TO-247-2
Mounting Type: Through Hole
Speed: No Recovery Time > 500mA (Io)
Reverse Recovery Time (trr): 0 ns
Technology: SiC (Silicon Carbide) Schottky
Capacitance @ Vr, F: 2070pF @ 1V, 1MHz
Current - Average Rectified (Io): 61A
Supplier Device Package: TO-247-2L
Operating Temperature - Junction: 175°C
Voltage - DC Reverse (Vr) (Max): 1200 V
Voltage - Forward (Vf) (Max) @ If: 1.45 V @ 20 A
Current - Reverse Leakage @ Vr: 130 µA @ 1200 V
на замовлення 60 шт:
термін постачання 21-31 дні (днів)
Кількість Ціна
1+893.92 грн
30+678.43 грн
В кошику  од. на суму  грн.
RN4906FE,LXHF(CT RN4906FE_datasheet_en_20210818.pdf?did=19027&prodName=RN4906FE
RN4906FE,LXHF(CT
Виробник: Toshiba Semiconductor and Storage
Description: AUTO AEC-Q 2-IN-1 (POINT-SYMMETR
Packaging: Tape & Reel (TR)
Package / Case: SOT-563, SOT-666
Mounting Type: Surface Mount
Transistor Type: 1 NPN, 1 PNP - Pre-Biased (Dual)
Power - Max: 100mW
Current - Collector (Ic) (Max): 100mA
Voltage - Collector Emitter Breakdown (Max): 50V
Vce Saturation (Max) @ Ib, Ic: 300mV @ 250µA, 5mA
Current - Collector Cutoff (Max): 500nA
DC Current Gain (hFE) (Min) @ Ic, Vce: 80 @ 10mA, 5V
Frequency - Transition: 200MHz, 250MHz
Resistor - Base (R1): 4.7kOhms
Resistor - Emitter Base (R2): 47kOhms
Supplier Device Package: ES6
Grade: Automotive
Qualification: AEC-Q101
на замовлення 4000 шт:
термін постачання 21-31 дні (днів)
Кількість Ціна
4000+5.97 грн
Мінімальне замовлення: 4000
В кошику  од. на суму  грн.
RN4906FE,LXHF(CT RN4906FE_datasheet_en_20210818.pdf?did=19027&prodName=RN4906FE
RN4906FE,LXHF(CT
Виробник: Toshiba Semiconductor and Storage
Description: AUTO AEC-Q 2-IN-1 (POINT-SYMMETR
Packaging: Cut Tape (CT)
Package / Case: SOT-563, SOT-666
Mounting Type: Surface Mount
Transistor Type: 1 NPN, 1 PNP - Pre-Biased (Dual)
Power - Max: 100mW
Current - Collector (Ic) (Max): 100mA
Voltage - Collector Emitter Breakdown (Max): 50V
Vce Saturation (Max) @ Ib, Ic: 300mV @ 250µA, 5mA
Current - Collector Cutoff (Max): 500nA
DC Current Gain (hFE) (Min) @ Ic, Vce: 80 @ 10mA, 5V
Frequency - Transition: 200MHz, 250MHz
Resistor - Base (R1): 4.7kOhms
Resistor - Emitter Base (R2): 47kOhms
Supplier Device Package: ES6
Grade: Automotive
Qualification: AEC-Q101
на замовлення 7868 шт:
термін постачання 21-31 дні (днів)
Кількість Ціна
11+29.37 грн
18+17.66 грн
100+11.09 грн
500+7.75 грн
1000+6.89 грн
2000+6.17 грн
Мінімальне замовлення: 11
В кошику  од. на суму  грн.
SSM3J66MFV,L3F SSM3J66MFV_datasheet_en_20210928.pdf?did=61143&prodName=SSM3J66MFV
SSM3J66MFV,L3F
Виробник: Toshiba Semiconductor and Storage
Description: MOSFET P-CH 20V 800MA VESM
Packaging: Tape & Reel (TR)
Package / Case: SOT-723
Mounting Type: Surface Mount
Operating Temperature: 150°C
Technology: MOSFET (Metal Oxide)
FET Type: P-Channel
Current - Continuous Drain (Id) @ 25°C: 800mA (Ta)
Rds On (Max) @ Id, Vgs: 390mOhm @ 800mA, 4.5V
Power Dissipation (Max): 150mW (Ta)
Vgs(th) (Max) @ Id: 1V @ 1mA
Supplier Device Package: VESM
Drive Voltage (Max Rds On, Min Rds On): 1.2V, 4.5V
Vgs (Max): +6V, -8V
Drain to Source Voltage (Vdss): 20 V
Gate Charge (Qg) (Max) @ Vgs: 1.6 nC @ 4.5 V
Input Capacitance (Ciss) (Max) @ Vds: 100 pF @ 10 V
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SSM3J66MFV,L3F SSM3J66MFV_datasheet_en_20210928.pdf?did=61143&prodName=SSM3J66MFV
SSM3J66MFV,L3F
Виробник: Toshiba Semiconductor and Storage
Description: MOSFET P-CH 20V 800MA VESM
Packaging: Cut Tape (CT)
Package / Case: SOT-723
Mounting Type: Surface Mount
Operating Temperature: 150°C
Technology: MOSFET (Metal Oxide)
FET Type: P-Channel
Current - Continuous Drain (Id) @ 25°C: 800mA (Ta)
Rds On (Max) @ Id, Vgs: 390mOhm @ 800mA, 4.5V
Power Dissipation (Max): 150mW (Ta)
Vgs(th) (Max) @ Id: 1V @ 1mA
Supplier Device Package: VESM
Drive Voltage (Max Rds On, Min Rds On): 1.2V, 4.5V
Vgs (Max): +6V, -8V
Drain to Source Voltage (Vdss): 20 V
Gate Charge (Qg) (Max) @ Vgs: 1.6 nC @ 4.5 V
Input Capacitance (Ciss) (Max) @ Vds: 100 pF @ 10 V
на замовлення 10535 шт:
термін постачання 21-31 дні (днів)
Кількість Ціна
14+23.82 грн
22+13.91 грн
100+8.74 грн
500+6.07 грн
1000+5.38 грн
2000+4.80 грн
Мінімальне замовлення: 14
В кошику  од. на суму  грн.
TCR3DM18,RF(SE TCR3DM10_datasheet_en_20210927.pdf?did=140551&prodName=TCR3DM10
TCR3DM18,RF(SE
Виробник: Toshiba Semiconductor and Storage
Description: LDO REG IOUT: 300MA VIN: 6V VOUT
Packaging: Tape & Reel (TR)
Package / Case: 4-UDFN Exposed Pad
Output Type: Fixed
Mounting Type: Surface Mount
Current - Output: 300mA
Operating Temperature: -40°C ~ 85°C
Output Configuration: Positive
Voltage - Input (Max): 5.5V
Number of Regulators: 1
Supplier Device Package: 4-DFN (1x1)
Voltage - Output (Min/Fixed): 1.8V
Control Features: Enable
Voltage Dropout (Max): 0.38V @ 300mA
Protection Features: Over Current, Over Temperature
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TCR3DM18,RF(SE TCR3DM10_datasheet_en_20210927.pdf?did=140551&prodName=TCR3DM10
TCR3DM18,RF(SE
Виробник: Toshiba Semiconductor and Storage
Description: LDO REG IOUT: 300MA VIN: 6V VOUT
Packaging: Cut Tape (CT)
Package / Case: 4-UDFN Exposed Pad
Output Type: Fixed
Mounting Type: Surface Mount
Current - Output: 300mA
Operating Temperature: -40°C ~ 85°C
Output Configuration: Positive
Voltage - Input (Max): 5.5V
Number of Regulators: 1
Supplier Device Package: 4-DFN (1x1)
Voltage - Output (Min/Fixed): 1.8V
Control Features: Enable
Voltage Dropout (Max): 0.38V @ 300mA
Protection Features: Over Current, Over Temperature
на замовлення 2675 шт:
термін постачання 21-31 дні (днів)
Кількість Ціна
9+38.90 грн
14+22.48 грн
25+18.44 грн
100+13.01 грн
250+10.90 грн
500+9.60 грн
1000+8.37 грн
2500+7.21 грн
Мінімальне замовлення: 9
В кошику  од. на суму  грн.
TJ20S04M3L(T6L1,NQ TJ20S04M3L_datasheet_en_20200624.pdf?did=11300&prodName=TJ20S04M3L
TJ20S04M3L(T6L1,NQ
Виробник: Toshiba Semiconductor and Storage
Description: MOSFET P-CH 40V 20A DPAK
Packaging: Tape & Reel (TR)
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Mounting Type: Surface Mount
Operating Temperature: 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: P-Channel
Current - Continuous Drain (Id) @ 25°C: 20A (Ta)
Rds On (Max) @ Id, Vgs: 22.2mOhm @ 10A, 10V
Power Dissipation (Max): 41W (Tc)
Vgs(th) (Max) @ Id: 3V @ 1mA
Supplier Device Package: DPAK+
Drive Voltage (Max Rds On, Min Rds On): 6V, 10V
Vgs (Max): +10V, -20V
Drain to Source Voltage (Vdss): 40 V
Gate Charge (Qg) (Max) @ Vgs: 37 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 1850 pF @ 10 V
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TJ20S04M3L(T6L1,NQ TJ20S04M3L_datasheet_en_20200624.pdf?did=11300&prodName=TJ20S04M3L
TJ20S04M3L(T6L1,NQ
Виробник: Toshiba Semiconductor and Storage
Description: MOSFET P-CH 40V 20A DPAK
Packaging: Cut Tape (CT)
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Mounting Type: Surface Mount
Operating Temperature: 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: P-Channel
Current - Continuous Drain (Id) @ 25°C: 20A (Ta)
Rds On (Max) @ Id, Vgs: 22.2mOhm @ 10A, 10V
Power Dissipation (Max): 41W (Tc)
Vgs(th) (Max) @ Id: 3V @ 1mA
Supplier Device Package: DPAK+
Drive Voltage (Max Rds On, Min Rds On): 6V, 10V
Vgs (Max): +10V, -20V
Drain to Source Voltage (Vdss): 40 V
Gate Charge (Qg) (Max) @ Vgs: 37 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 1850 pF @ 10 V
на замовлення 1067 шт:
термін постачання 21-31 дні (днів)
Кількість Ціна
3+134.17 грн
10+82.34 грн
100+55.46 грн
500+41.22 грн
1000+37.74 грн
Мінімальне замовлення: 3
В кошику  од. на суму  грн.
RN2410,LF RN2410_datasheet_en_20210830.pdf?did=18878&prodName=RN2410
RN2410,LF
Виробник: Toshiba Semiconductor and Storage
Description: TRANS PREBIAS PNP 50V SMINI
Packaging: Tape & Reel (TR)
Package / Case: TO-236-3, SC-59, SOT-23-3
Mounting Type: Surface Mount
Transistor Type: PNP - Pre-Biased
Vce Saturation (Max) @ Ib, Ic: 300mV @ 250µA, 5mA
Current - Collector Cutoff (Max): 100nA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce: 120 @ 1mA, 5V
Supplier Device Package: S-Mini
Current - Collector (Ic) (Max): 100 mA
Voltage - Collector Emitter Breakdown (Max): 50 V
Power - Max: 200 mW
Frequency - Transition: 200 MHz
Resistor - Base (R1): 4.7 kOhms
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RN2410,LF RN2410_datasheet_en_20210830.pdf?did=18878&prodName=RN2410
RN2410,LF
Виробник: Toshiba Semiconductor and Storage
Description: TRANS PREBIAS PNP 50V SMINI
Packaging: Cut Tape (CT)
Package / Case: TO-236-3, SC-59, SOT-23-3
Mounting Type: Surface Mount
Transistor Type: PNP - Pre-Biased
Vce Saturation (Max) @ Ib, Ic: 300mV @ 250µA, 5mA
Current - Collector Cutoff (Max): 100nA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce: 120 @ 1mA, 5V
Supplier Device Package: S-Mini
Current - Collector (Ic) (Max): 100 mA
Voltage - Collector Emitter Breakdown (Max): 50 V
Power - Max: 200 mW
Frequency - Transition: 200 MHz
Resistor - Base (R1): 4.7 kOhms
на замовлення 200 шт:
термін постачання 21-31 дні (днів)
Кількість Ціна
27+11.91 грн
44+7.03 грн
100+4.33 грн
Мінімальне замовлення: 27
В кошику  од. на суму  грн.
RN2410,LXHF RN2410_datasheet_en_20210830.pdf?did=18878&prodName=RN2410
RN2410,LXHF
Виробник: Toshiba Semiconductor and Storage
Description: TRANS PREBIAS PNP 50V SMINI
Packaging: Tape & Reel (TR)
Package / Case: TO-236-3, SC-59, SOT-23-3
Mounting Type: Surface Mount
Transistor Type: PNP - Pre-Biased
Vce Saturation (Max) @ Ib, Ic: 300mV @ 250µA, 5mA
Current - Collector Cutoff (Max): 100nA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce: 120 @ 1mA, 5V
Supplier Device Package: S-Mini
Grade: Automotive
Current - Collector (Ic) (Max): 100 mA
Voltage - Collector Emitter Breakdown (Max): 50 V
Power - Max: 200 mW
Frequency - Transition: 200 MHz
Resistor - Base (R1): 4.7 kOhms
Qualification: AEC-Q101
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RN2410,LXHF RN2410_datasheet_en_20210830.pdf?did=18878&prodName=RN2410
RN2410,LXHF
Виробник: Toshiba Semiconductor and Storage
Description: TRANS PREBIAS PNP 50V SMINI
Packaging: Cut Tape (CT)
Package / Case: TO-236-3, SC-59, SOT-23-3
Mounting Type: Surface Mount
Transistor Type: PNP - Pre-Biased
Vce Saturation (Max) @ Ib, Ic: 300mV @ 250µA, 5mA
Current - Collector Cutoff (Max): 100nA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce: 120 @ 1mA, 5V
Supplier Device Package: S-Mini
Grade: Automotive
Current - Collector (Ic) (Max): 100 mA
Voltage - Collector Emitter Breakdown (Max): 50 V
Power - Max: 200 mW
Frequency - Transition: 200 MHz
Resistor - Base (R1): 4.7 kOhms
Qualification: AEC-Q101
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TC74HC21AF(EL,F) docget.jsp?did=12794&prodName=TC74HC21AF
Виробник: Toshiba Semiconductor and Storage
Description: IC GATE AND 2CH 4-INP 14SOIC
Packaging: Tape & Reel (TR)
Package / Case: 14-SOIC (0.209", 5.30mm Width)
Mounting Type: Surface Mount
Logic Type: AND Gate
Operating Temperature: -40°C ~ 85°C
Voltage - Supply: 2V ~ 6V
Current - Output High, Low: 5.2mA, 5.2mA
Number of Inputs: 4
Supplier Device Package: 14-SOP
Input Logic Level - High: 1.5V ~ 4.2V
Input Logic Level - Low: 0.5V ~ 1.8V
Max Propagation Delay @ V, Max CL: 17ns @ 6V, 50pF
Number of Circuits: 2
Current - Quiescent (Max): 1 µA
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TRS10N120HB,S1Q docget.jsp?did=158263&prodName=TRS10N120HB
TRS10N120HB,S1Q
Виробник: Toshiba Semiconductor and Storage
Description: DIODE ARRAY SIC 1200V 18A TO-247
Packaging: Tube
Package / Case: TO-247-3
Mounting Type: Through Hole
Speed: No Recovery Time > 500mA (Io)
Reverse Recovery Time (trr): 0 ns
Technology: SiC (Silicon Carbide) Schottky
Diode Configuration: 1 Pair Common Cathode
Current - Average Rectified (Io) (per Diode): 18A
Supplier Device Package: TO-247
Operating Temperature - Junction: 175°C
Voltage - DC Reverse (Vr) (Max): 1200 V
Voltage - Forward (Vf) (Max) @ If: 1.45 V @ 5 A
Current - Reverse Leakage @ Vr: 50 µA @ 1200 V
на замовлення 60 шт:
термін постачання 21-31 дні (днів)
Кількість Ціна
1+657.34 грн
30+417.36 грн
В кошику  од. на суму  грн.
DF5A6.8LJE,LM DF5A6.8LJE_datasheet_en_20140301.pdf?did=22265&prodName=DF5A6.8LJE
DF5A6.8LJE,LM
Виробник: Toshiba Semiconductor and Storage
Description: TVS DIODE 5VWM ESV
Packaging: Tape & Reel (TR)
Package / Case: SOT-553
Mounting Type: Surface Mount
Type: Zener
Applications: General Purpose
Capacitance @ Frequency: 6pF @ 1MHz
Voltage - Reverse Standoff (Typ): 5V
Supplier Device Package: ESV
Unidirectional Channels: 4
Voltage - Breakdown (Min): 6.5V
Power Line Protection: No
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DF5A6.8LJE,LM DF5A6.8LJE_datasheet_en_20140301.pdf?did=22265&prodName=DF5A6.8LJE
DF5A6.8LJE,LM
Виробник: Toshiba Semiconductor and Storage
Description: TVS DIODE 5VWM ESV
Packaging: Cut Tape (CT)
Package / Case: SOT-553
Mounting Type: Surface Mount
Type: Zener
Applications: General Purpose
Capacitance @ Frequency: 6pF @ 1MHz
Voltage - Reverse Standoff (Typ): 5V
Supplier Device Package: ESV
Unidirectional Channels: 4
Voltage - Breakdown (Min): 6.5V
Power Line Protection: No
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TLP3083F(D4,TP4F TLP3083F_datasheet_en_20200217.pdf?did=30348&prodName=TLP3083F
TLP3083F(D4,TP4F
Виробник: Toshiba Semiconductor and Storage
Description: PHOTOTRIAC; ZVC; WIDE CREEPAGE;
Packaging: Tape & Reel (TR)
Package / Case: 6-SMD, Gull Wing, 5 Leads
Output Type: Triac
Mounting Type: Surface Mount
Operating Temperature: -40°C ~ 100°C
Voltage - Forward (Vf) (Typ): 1.15V
Voltage - Isolation: 5000Vrms
Approval Agency: CQC, CSA, cUL, UL, VDE
Current - Hold (Ih): 600µA
Supplier Device Package: 6-SMD
Zero Crossing Circuit: Yes
Static dV/dt (Min): 2kV/µs (Typ)
Current - LED Trigger (Ift) (Max): 5mA
Number of Channels: 1
Current - On State (It (RMS)) (Max): 100 mA
Voltage - Off State: 800 V
Current - DC Forward (If) (Max): 50 mA
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TLP3083F(D4,TP4F TLP3083F_datasheet_en_20200217.pdf?did=30348&prodName=TLP3083F
TLP3083F(D4,TP4F
Виробник: Toshiba Semiconductor and Storage
Description: PHOTOTRIAC; ZVC; WIDE CREEPAGE;
Packaging: Cut Tape (CT)
Package / Case: 6-SMD, Gull Wing, 5 Leads
Output Type: Triac
Mounting Type: Surface Mount
Operating Temperature: -40°C ~ 100°C
Voltage - Forward (Vf) (Typ): 1.15V
Voltage - Isolation: 5000Vrms
Approval Agency: CQC, CSA, cUL, UL, VDE
Current - Hold (Ih): 600µA
Supplier Device Package: 6-SMD
Zero Crossing Circuit: Yes
Static dV/dt (Min): 2kV/µs (Typ)
Current - LED Trigger (Ift) (Max): 5mA
Number of Channels: 1
Current - On State (It (RMS)) (Max): 100 mA
Voltage - Off State: 800 V
Current - DC Forward (If) (Max): 50 mA
на замовлення 975 шт:
термін постачання 21-31 дні (днів)
Кількість Ціна
3+147.66 грн
10+91.59 грн
100+65.66 грн
500+52.04 грн
Мінімальне замовлення: 3
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TLP3083F(D4,LF4F TLP3083F_datasheet_en_20200217.pdf?did=30348&prodName=TLP3083F
TLP3083F(D4,LF4F
Виробник: Toshiba Semiconductor and Storage
Description: PHOTOTRIAC; ZVC; WIDE CREEPAGE;
Packaging: Tube
Package / Case: 6-SMD, Gull Wing, 5 Leads
Output Type: Triac
Mounting Type: Surface Mount
Operating Temperature: -40°C ~ 100°C
Voltage - Forward (Vf) (Typ): 1.15V
Voltage - Isolation: 5000Vrms
Approval Agency: CQC, CSA, cUL, UL, VDE
Current - Hold (Ih): 600µA
Supplier Device Package: 6-SMD
Zero Crossing Circuit: Yes
Static dV/dt (Min): 2kV/µs (Typ)
Current - LED Trigger (Ift) (Max): 5mA
Number of Channels: 1
Current - On State (It (RMS)) (Max): 100 mA
Voltage - Off State: 800 V
Current - DC Forward (If) (Max): 50 mA
на замовлення 47 шт:
термін постачання 21-31 дні (днів)
Кількість Ціна
3+147.66 грн
Мінімальне замовлення: 3
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TLP3083F(D4,F TLP3083_datasheet_en_20200217.pdf?did=30348&prodName=TLP3083
TLP3083F(D4,F
Виробник: Toshiba Semiconductor and Storage
Description: PHOTOCOUPLER
Packaging: Tube
Package / Case: 6-DIP (0.400", 10.16mm), 5 Leads
Output Type: Triac
Mounting Type: Through Hole
Operating Temperature: -40°C ~ 100°C
Voltage - Forward (Vf) (Typ): 1.15V
Voltage - Isolation: 5000Vrms
Approval Agency: CQC, CSA, cUL, UL, VDE
Current - Hold (Ih): 600µA
Supplier Device Package: 6-DIP
Zero Crossing Circuit: Yes
Static dV/dt (Min): 2kV/µs (Typ)
Current - LED Trigger (Ift) (Max): 5mA
Number of Channels: 1
Current - On State (It (RMS)) (Max): 100 mA
Voltage - Off State: 800 V
Current - DC Forward (If) (Max): 50 mA
на замовлення 23 шт:
термін постачання 21-31 дні (днів)
Кількість Ціна
3+147.66 грн
Мінімальне замовлення: 3
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TC74ACT04FTEL
TC74ACT04FTEL
Виробник: Toshiba Semiconductor and Storage
Description: IC INVERTER 6CH 1IN 14TSSOP
Packaging: Cut Tape (CT)
Package / Case: 14-TSSOP (0.173", 4.40mm Width)
Mounting Type: Surface Mount
Logic Type: Inverter
Operating Temperature: -40°C ~ 85°C
Voltage - Supply: 4.5V ~ 5.5V
Current - Output High, Low: 24mA, 24mA
Number of Inputs: 1
Supplier Device Package: 14-TSSOP
Input Logic Level - High: 2V
Input Logic Level - Low: 0.8V
Max Propagation Delay @ V, Max CL: 7.9ns @ 5V, 50pF
Number of Circuits: 6
Current - Quiescent (Max): 4 µA
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TC74VHC14FK(EL,K)
TC74VHC14FK(EL,K)
Виробник: Toshiba Semiconductor and Storage
Description: IC INVERTER 6CH 1-INP 14VSSOP
Features: Schmitt Trigger
Packaging: Cut Tape (CT)
Package / Case: 14-VFSOP (0.118", 3.00mm Width)
Mounting Type: Surface Mount
Logic Type: Inverter
Operating Temperature: -40°C ~ 85°C
Voltage - Supply: 2V ~ 5.5V
Current - Output High, Low: 8mA, 8mA
Number of Inputs: 1
Supplier Device Package: 14-VSSOP
Input Logic Level - High: 2.2V ~ 3.85V
Input Logic Level - Low: 0.9V ~ 1.65V
Max Propagation Delay @ V, Max CL: 10.6ns @ 5V, 50pF
Number of Circuits: 6
Current - Quiescent (Max): 2 µA
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XPH1R104PS,L1XHQ docget.jsp?did=139827&prodName=XPH1R104PS
Виробник: Toshiba Semiconductor and Storage
Description: 40V UMOS9-H SOP ADVANCE
Packaging: Tape & Reel (TR)
Package / Case: 8-PowerVDFN
Mounting Type: Surface Mount
Operating Temperature: 175°C
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 120A (Ta)
Rds On (Max) @ Id, Vgs: 1.14mOhm @ 60A, 10V
Power Dissipation (Max): 3W (Ta), 132W (Tc)
Vgs(th) (Max) @ Id: 3V @ 500µA
Supplier Device Package: 8-SOP Advance (5x5)
Grade: Automotive
Drive Voltage (Max Rds On, Min Rds On): 6V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 40 V
Gate Charge (Qg) (Max) @ Vgs: 55 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 4560 pF @ 10 V
Qualification: AEC-Q101
на замовлення 5000 шт:
термін постачання 21-31 дні (днів)
Кількість Ціна
5000+43.45 грн
Мінімальне замовлення: 5000
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XPH1R104PS,L1XHQ docget.jsp?did=139827&prodName=XPH1R104PS
Виробник: Toshiba Semiconductor and Storage
Description: 40V UMOS9-H SOP ADVANCE
Packaging: Cut Tape (CT)
Package / Case: 8-PowerVDFN
Mounting Type: Surface Mount
Operating Temperature: 175°C
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 120A (Ta)
Rds On (Max) @ Id, Vgs: 1.14mOhm @ 60A, 10V
Power Dissipation (Max): 3W (Ta), 132W (Tc)
Vgs(th) (Max) @ Id: 3V @ 500µA
Supplier Device Package: 8-SOP Advance (5x5)
Grade: Automotive
Drive Voltage (Max Rds On, Min Rds On): 6V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 40 V
Gate Charge (Qg) (Max) @ Vgs: 55 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 4560 pF @ 10 V
Qualification: AEC-Q101
на замовлення 5000 шт:
термін постачання 21-31 дні (днів)
Кількість Ціна
2+169.10 грн
10+101.91 грн
25+85.96 грн
100+63.71 грн
250+55.38 грн
500+50.26 грн
1000+45.22 грн
2500+40.67 грн
Мінімальне замовлення: 2
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TCK1024G,LF TCK22946G_datasheet_en_20220609.pdf?did=36710&prodName=TCK22946G
TCK1024G,LF
Виробник: Toshiba Semiconductor and Storage
Description: IC PWR SWITCH P-CHAN 1:1 WCSP6E
Features: Load Discharge
Packaging: Tape & Reel (TR)
Package / Case: 6-UFBGA, WLCSP
Output Type: P-Channel
Mounting Type: Surface Mount
Number of Outputs: 1
Interface: On/Off
Switch Type: General Purpose
Operating Temperature: -40°C ~ 85°C (TA)
Output Configuration: High Side
Rds On (Typ): 31mOhm
Input Type: Non-Inverting
Voltage - Load: 1.4V ~ 5.5V
Current - Output (Max): 1.54A
Ratio - Input:Output: 1:1
Supplier Device Package: 6-WCSPE (0.80x1.2)
Fault Protection: Current Limiting (Fixed), Over Temperature, Reverse Current
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TCK1024G,LF TCK22946G_datasheet_en_20220609.pdf?did=36710&prodName=TCK22946G
TCK1024G,LF
Виробник: Toshiba Semiconductor and Storage
Description: IC PWR SWITCH P-CHAN 1:1 WCSP6E
Features: Load Discharge
Packaging: Cut Tape (CT)
Package / Case: 6-UFBGA, WLCSP
Output Type: P-Channel
Mounting Type: Surface Mount
Number of Outputs: 1
Interface: On/Off
Switch Type: General Purpose
Operating Temperature: -40°C ~ 85°C (TA)
Output Configuration: High Side
Rds On (Typ): 31mOhm
Input Type: Non-Inverting
Voltage - Load: 1.4V ~ 5.5V
Current - Output (Max): 1.54A
Ratio - Input:Output: 1:1
Supplier Device Package: 6-WCSPE (0.80x1.2)
Fault Protection: Current Limiting (Fixed), Over Temperature, Reverse Current
на замовлення 4448 шт:
термін постачання 21-31 дні (днів)
Кількість Ціна
6+60.34 грн
10+36.08 грн
100+23.35 грн
500+16.75 грн
1000+15.08 грн
2000+13.68 грн
Мінімальне замовлення: 6
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XCUZ30V,H3XHF(B docget.jsp?did=153645&prodName=XCUZ30V
XCUZ30V,H3XHF(B
Виробник: Toshiba Semiconductor and Storage
Description: 30 V ZENER DIODEAEC-Q, SOD-323(U
Packaging: Tape & Reel (TR)
Package / Case: SC-76, SOD-323
Mounting Type: Surface Mount
Type: Zener
Operating Temperature: 150°C (TJ)
Capacitance @ Frequency: 21pF @ 1MHz
Current - Peak Pulse (10/1000µs): 4A (8/20µs)
Voltage - Reverse Standoff (Typ): 23V (Max)
Supplier Device Package: USC
Unidirectional Channels: 1
Voltage - Breakdown (Min): 28V
Voltage - Clamping (Max) @ Ipp: 47.5V (Typ)
Power - Peak Pulse: 200W
Power Line Protection: No
Grade: Automotive
Qualification: AEC-Q101
на замовлення 6000 шт:
термін постачання 21-31 дні (днів)
Кількість Ціна
3000+2.33 грн
6000+2.00 грн
Мінімальне замовлення: 3000
В кошику  од. на суму  грн.
XCUZ30V,H3XHF(B docget.jsp?did=153645&prodName=XCUZ30V
XCUZ30V,H3XHF(B
Виробник: Toshiba Semiconductor and Storage
Description: 30 V ZENER DIODEAEC-Q, SOD-323(U
Packaging: Cut Tape (CT)
Package / Case: SC-76, SOD-323
Mounting Type: Surface Mount
Type: Zener
Operating Temperature: 150°C (TJ)
Capacitance @ Frequency: 21pF @ 1MHz
Current - Peak Pulse (10/1000µs): 4A (8/20µs)
Voltage - Reverse Standoff (Typ): 23V (Max)
Supplier Device Package: USC
Unidirectional Channels: 1
Voltage - Breakdown (Min): 28V
Voltage - Clamping (Max) @ Ipp: 47.5V (Typ)
Power - Peak Pulse: 200W
Power Line Protection: No
Grade: Automotive
Qualification: AEC-Q101
на замовлення 6000 шт:
термін постачання 21-31 дні (днів)
Кількість Ціна
23+14.29 грн
37+8.33 грн
100+5.15 грн
500+3.53 грн
1000+3.10 грн
Мінімальне замовлення: 23
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2SC4213-A(TE85L,F) 2SC4213_datasheet_en_20210625.pdf?did=19305&prodName=2SC4213
2SC4213-A(TE85L,F)
Виробник: Toshiba Semiconductor and Storage
Description: TRANS NPN 20V 0.3A SC-70
Packaging: Cut Tape (CT)
Package / Case: SC-70, SOT-323
Mounting Type: Surface Mount
Transistor Type: NPN
Operating Temperature: 125°C (TJ)
Vce Saturation (Max) @ Ib, Ic: 100mV @ 3mA, 30A
Current - Collector Cutoff (Max): 100nA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce: 200 @ 4mA, 2V
Frequency - Transition: 30MHz
Supplier Device Package: SC-70
Current - Collector (Ic) (Max): 300 mA
Voltage - Collector Emitter Breakdown (Max): 20 V
Power - Max: 100 mW
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XCUZ6V2,H3XHF(B docget.jsp?did=153645&prodName=XCUZ15V
XCUZ6V2,H3XHF(B
Виробник: Toshiba Semiconductor and Storage
Description: 6.2 V ZENER DIODEAEC-Q, SOD-323(
Packaging: Tape & Reel (TR)
Package / Case: SC-76, SOD-323
Mounting Type: Surface Mount
Type: Zener
Operating Temperature: 150°C (TJ)
Capacitance @ Frequency: 105pF @ 1MHz
Current - Peak Pulse (10/1000µs): 11A (8/20µs)
Voltage - Reverse Standoff (Typ): 3V (Max)
Supplier Device Package: USC
Unidirectional Channels: 1
Voltage - Breakdown (Min): 5.8V
Voltage - Clamping (Max) @ Ipp: 10V (Typ)
Power - Peak Pulse: 175W
Power Line Protection: No
Grade: Automotive
Qualification: AEC-Q101
на замовлення 3000 шт:
термін постачання 21-31 дні (днів)
Кількість Ціна
3000+2.33 грн
Мінімальне замовлення: 3000
В кошику  од. на суму  грн.
XCUZ6V2,H3XHF(B docget.jsp?did=153645&prodName=XCUZ15V
XCUZ6V2,H3XHF(B
Виробник: Toshiba Semiconductor and Storage
Description: 6.2 V ZENER DIODEAEC-Q, SOD-323(
Packaging: Cut Tape (CT)
Package / Case: SC-76, SOD-323
Mounting Type: Surface Mount
Type: Zener
Operating Temperature: 150°C (TJ)
Capacitance @ Frequency: 105pF @ 1MHz
Current - Peak Pulse (10/1000µs): 11A (8/20µs)
Voltage - Reverse Standoff (Typ): 3V (Max)
Supplier Device Package: USC
Unidirectional Channels: 1
Voltage - Breakdown (Min): 5.8V
Voltage - Clamping (Max) @ Ipp: 10V (Typ)
Power - Peak Pulse: 175W
Power Line Protection: No
Grade: Automotive
Qualification: AEC-Q101
на замовлення 5960 шт:
термін постачання 21-31 дні (днів)
Кількість Ціна
23+14.29 грн
37+8.33 грн
100+5.15 грн
500+3.53 грн
1000+3.10 грн
Мінімальне замовлення: 23
В кошику  од. на суму  грн.
TLP620M(BL-TP5,E
TLP620M(BL-TP5,E
Виробник: Toshiba Semiconductor and Storage
Description: OPTOISOLATOR 5KV 1CH TRANS 4-SMD
Packaging: Tape & Reel (TR)
Package / Case: 4-SMD, Gull Wing
Output Type: Transistor
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 125°C
Voltage - Forward (Vf) (Typ): 1.25V
Input Type: AC, DC
Current - Output / Channel: 50mA
Voltage - Isolation: 5000Vrms
Current Transfer Ratio (Min): 50% @ 5mA
Vce Saturation (Max): 300mV
Current Transfer Ratio (Max): 600% @ 5mA
Supplier Device Package: 4-SMD
Voltage - Output (Max): 80V
Turn On / Turn Off Time (Typ): 3µs, 3µs
Rise / Fall Time (Typ): 2µs, 3µs
Number of Channels: 1
Current - DC Forward (If) (Max): 50 mA
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TLP620M(D4BLT5,E
TLP620M(D4BLT5,E
Виробник: Toshiba Semiconductor and Storage
Description: OPTOISOLATOR 5KV 1CH TRANS 4-DIP
Packaging: Tape & Reel (TR)
Package / Case: 4-DIP (0.300", 7.62mm)
Output Type: Transistor
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 125°C
Voltage - Forward (Vf) (Typ): 1.25V
Input Type: AC, DC
Current - Output / Channel: 50mA
Voltage - Isolation: 5000Vrms
Current Transfer Ratio (Min): 50% @ 5mA
Vce Saturation (Max): 300mV
Current Transfer Ratio (Max): 600% @ 5mA
Supplier Device Package: 4-DIP
Voltage - Output (Max): 80V
Turn On / Turn Off Time (Typ): 3µs, 3µs
Rise / Fall Time (Typ): 2µs, 3µs
Number of Channels: 1
Current - DC Forward (If) (Max): 50 mA
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TLP620M(D4-TP5,E
TLP620M(D4-TP5,E
Виробник: Toshiba Semiconductor and Storage
Description: OPTOISOLATOR 5KV 1CH TRANS 4-SMD
Packaging: Tape & Reel (TR)
Package / Case: 4-SMD, Gull Wing
Output Type: Transistor
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 125°C
Voltage - Forward (Vf) (Typ): 1.25V
Input Type: AC, DC
Current - Output / Channel: 50mA
Voltage - Isolation: 5000Vrms
Current Transfer Ratio (Min): 50% @ 5mA
Vce Saturation (Max): 300mV
Current Transfer Ratio (Max): 600% @ 5mA
Supplier Device Package: 4-SMD
Voltage - Output (Max): 80V
Turn On / Turn Off Time (Typ): 3µs, 3µs
Rise / Fall Time (Typ): 2µs, 3µs
Number of Channels: 1
Current - DC Forward (If) (Max): 50 mA
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TLP620M(D4BLT1,E
TLP620M(D4BLT1,E
Виробник: Toshiba Semiconductor and Storage
Description: OPTOISOLATOR 5KV 1CH TRANS 4-DIP
Packaging: Tape & Reel (TR)
Package / Case: 4-DIP (0.300", 7.62mm)
Output Type: Transistor
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 125°C
Voltage - Forward (Vf) (Typ): 1.25V
Input Type: AC, DC
Current - Output / Channel: 50mA
Voltage - Isolation: 5000Vrms
Current Transfer Ratio (Min): 50% @ 5mA
Vce Saturation (Max): 300mV
Current Transfer Ratio (Max): 600% @ 5mA
Supplier Device Package: 4-DIP
Voltage - Output (Max): 80V
Turn On / Turn Off Time (Typ): 3µs, 3µs
Rise / Fall Time (Typ): 2µs, 3µs
Number of Channels: 1
Current - DC Forward (If) (Max): 50 mA
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TLP620M(D4GBT5,E
TLP620M(D4GBT5,E
Виробник: Toshiba Semiconductor and Storage
Description: OPTOISOLATOR 5KV 1CH TRANS 4-DIP
Packaging: Tape & Reel (TR)
Package / Case: 4-DIP (0.300", 7.62mm)
Output Type: Transistor
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 125°C
Voltage - Forward (Vf) (Typ): 1.25V
Input Type: AC, DC
Current - Output / Channel: 50mA
Voltage - Isolation: 5000Vrms
Current Transfer Ratio (Min): 100% @ 5mA
Vce Saturation (Max): 300mV
Current Transfer Ratio (Max): 600% @ 5mA
Supplier Device Package: 4-DIP
Voltage - Output (Max): 80V
Turn On / Turn Off Time (Typ): 3µs, 3µs
Rise / Fall Time (Typ): 2µs, 3µs
Number of Channels: 1
Current - DC Forward (If) (Max): 50 mA
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TLP620M(D4GRT5,E
TLP620M(D4GRT5,E
Виробник: Toshiba Semiconductor and Storage
Description: OPTOISOLATOR 5KV 1CH TRANS 4-DIP
Packaging: Tape & Reel (TR)
Package / Case: 4-DIP (0.300", 7.62mm)
Output Type: Transistor
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 125°C
Voltage - Forward (Vf) (Typ): 1.25V
Input Type: AC, DC
Current - Output / Channel: 50mA
Voltage - Isolation: 5000Vrms
Current Transfer Ratio (Min): 50% @ 5mA
Vce Saturation (Max): 300mV
Current Transfer Ratio (Max): 600% @ 5mA
Supplier Device Package: 4-DIP
Voltage - Output (Max): 80V
Turn On / Turn Off Time (Typ): 3µs, 3µs
Rise / Fall Time (Typ): 2µs, 3µs
Number of Channels: 1
Current - DC Forward (If) (Max): 50 mA
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TLP620M(D4GRT1,E
TLP620M(D4GRT1,E
Виробник: Toshiba Semiconductor and Storage
Description: OPTOISOLATOR 5KV 1CH TRANS 4-DIP
Packaging: Tape & Reel (TR)
Package / Case: 4-DIP (0.300", 7.62mm)
Output Type: Transistor
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 125°C
Voltage - Forward (Vf) (Typ): 1.25V
Input Type: AC, DC
Current - Output / Channel: 50mA
Voltage - Isolation: 5000Vrms
Current Transfer Ratio (Min): 50% @ 5mA
Vce Saturation (Max): 300mV
Current Transfer Ratio (Max): 600% @ 5mA
Supplier Device Package: 4-DIP
Voltage - Output (Max): 80V
Turn On / Turn Off Time (Typ): 3µs, 3µs
Rise / Fall Time (Typ): 2µs, 3µs
Number of Channels: 1
Current - DC Forward (If) (Max): 50 mA
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TLP620M(GR-TP1,E
TLP620M(GR-TP1,E
Виробник: Toshiba Semiconductor and Storage
Description: OPTOISOLATOR 5KV 1CH TRANS 4-SMD
Packaging: Tape & Reel (TR)
Package / Case: 4-SMD (0.300", 7.62mm)
Output Type: Transistor
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 125°C
Voltage - Forward (Vf) (Typ): 1.25V
Input Type: AC, DC
Current - Output / Channel: 50mA
Voltage - Isolation: 5000Vrms
Current Transfer Ratio (Min): 50% @ 5mA
Vce Saturation (Max): 300mV
Current Transfer Ratio (Max): 600% @ 5mA
Supplier Device Package: 4-SMD
Voltage - Output (Max): 80V
Turn On / Turn Off Time (Typ): 3µs, 3µs
Rise / Fall Time (Typ): 2µs, 3µs
Number of Channels: 1
Current - DC Forward (If) (Max): 50 mA
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TLP620M(D4Y-T1,E
TLP620M(D4Y-T1,E
Виробник: Toshiba Semiconductor and Storage
Description: OPTOISOLATOR 5KV 1CH TRANS 4-DIP
Packaging: Tape & Reel (TR)
Package / Case: 4-DIP (0.300", 7.62mm)
Output Type: Transistor
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 125°C
Voltage - Forward (Vf) (Typ): 1.25V
Input Type: AC, DC
Current - Output / Channel: 50mA
Voltage - Isolation: 5000Vrms
Current Transfer Ratio (Min): 50% @ 5mA
Vce Saturation (Max): 300mV
Current Transfer Ratio (Max): 600% @ 5mA
Supplier Device Package: 4-DIP
Voltage - Output (Max): 80V
Turn On / Turn Off Time (Typ): 3µs, 3µs
Rise / Fall Time (Typ): 2µs, 3µs
Number of Channels: 1
Current - DC Forward (If) (Max): 50 mA
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TLP620M(D4GBT1,E
TLP620M(D4GBT1,E
Виробник: Toshiba Semiconductor and Storage
Description: OPTOISOLATOR 5KV 1CH TRANS 4-DIP
Packaging: Tape & Reel (TR)
Package / Case: 4-DIP (0.300", 7.62mm)
Output Type: Transistor
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 125°C
Voltage - Forward (Vf) (Typ): 1.25V
Input Type: AC, DC
Current - Output / Channel: 50mA
Voltage - Isolation: 5000Vrms
Current Transfer Ratio (Min): 100% @ 5mA
Vce Saturation (Max): 300mV
Current Transfer Ratio (Max): 600% @ 5mA
Supplier Device Package: 4-DIP
Voltage - Output (Max): 80V
Turn On / Turn Off Time (Typ): 3µs, 3µs
Rise / Fall Time (Typ): 2µs, 3µs
Number of Channels: 1
Current - DC Forward (If) (Max): 50 mA
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TLP620M(BL-TP1,E
TLP620M(BL-TP1,E
Виробник: Toshiba Semiconductor and Storage
Description: OPTOISOLATOR 5KV 1CH TRANS 4-SMD
Packaging: Tape & Reel (TR)
Package / Case: 4-SMD (0.300", 7.62mm)
Output Type: Transistor
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 125°C
Voltage - Forward (Vf) (Typ): 1.25V
Input Type: AC, DC
Current - Output / Channel: 50mA
Voltage - Isolation: 5000Vrms
Current Transfer Ratio (Min): 50% @ 5mA
Vce Saturation (Max): 300mV
Current Transfer Ratio (Max): 600% @ 5mA
Supplier Device Package: 4-SMD
Voltage - Output (Max): 80V
Turn On / Turn Off Time (Typ): 3µs, 3µs
Rise / Fall Time (Typ): 2µs, 3µs
Number of Channels: 1
Current - DC Forward (If) (Max): 50 mA
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TLP620M(GB-TP5,E
TLP620M(GB-TP5,E
Виробник: Toshiba Semiconductor and Storage
Description: OPTOISOLATOR 5KV 1CH TRANS 4-SMD
Packaging: Tape & Reel (TR)
Package / Case: 4-SMD, Gull Wing
Output Type: Transistor
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 125°C
Voltage - Forward (Vf) (Typ): 1.25V
Input Type: AC, DC
Current - Output / Channel: 50mA
Voltage - Isolation: 5000Vrms
Current Transfer Ratio (Min): 100% @ 5mA
Vce Saturation (Max): 300mV
Current Transfer Ratio (Max): 600% @ 5mA
Supplier Device Package: 4-SMD
Voltage - Output (Max): 80V
Turn On / Turn Off Time (Typ): 3µs, 3µs
Rise / Fall Time (Typ): 2µs, 3µs
Number of Channels: 1
Current - DC Forward (If) (Max): 50 mA
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TLP620M(D4Y-T5,E
TLP620M(D4Y-T5,E
Виробник: Toshiba Semiconductor and Storage
Description: OPTOISOLATOR 5KV 1CH TRANS 4-DIP
Packaging: Tape & Reel (TR)
Package / Case: 4-DIP (0.300", 7.62mm)
Output Type: Transistor
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 125°C
Voltage - Forward (Vf) (Typ): 1.25V
Input Type: AC, DC
Current - Output / Channel: 50mA
Voltage - Isolation: 5000Vrms
Current Transfer Ratio (Min): 50% @ 5mA
Vce Saturation (Max): 300mV
Current Transfer Ratio (Max): 600% @ 5mA
Supplier Device Package: 4-DIP
Voltage - Output (Max): 80V
Turn On / Turn Off Time (Typ): 3µs, 3µs
Rise / Fall Time (Typ): 2µs, 3µs
Number of Channels: 1
Current - DC Forward (If) (Max): 50 mA
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RN1410,LF docget.jsp?did=18792&prodName=RN1410
RN1410,LF
Виробник: Toshiba Semiconductor and Storage
Description: TRANS PREBIAS NPN 50V SMINI
Packaging: Tape & Reel (TR)
Package / Case: TO-236-3, SC-59, SOT-23-3
Mounting Type: Surface Mount
Transistor Type: NPN - Pre-Biased
Vce Saturation (Max) @ Ib, Ic: 300mV @ 250µA, 5mA
Current - Collector Cutoff (Max): 100nA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce: 120 @ 1mA, 5V
Supplier Device Package: S-Mini
Current - Collector (Ic) (Max): 100 mA
Voltage - Collector Emitter Breakdown (Max): 50 V
Power - Max: 200 mW
Frequency - Transition: 250 MHz
Resistor - Base (R1): 4.7 kOhms
на замовлення 6000 шт:
термін постачання 21-31 дні (днів)
Кількість Ціна
3000+2.41 грн
6000+2.07 грн
Мінімальне замовлення: 3000
В кошику  од. на суму  грн.
RN1410,LF docget.jsp?did=18792&prodName=RN1410
RN1410,LF
Виробник: Toshiba Semiconductor and Storage
Description: TRANS PREBIAS NPN 50V SMINI
Packaging: Cut Tape (CT)
Package / Case: TO-236-3, SC-59, SOT-23-3
Mounting Type: Surface Mount
Transistor Type: NPN - Pre-Biased
Vce Saturation (Max) @ Ib, Ic: 300mV @ 250µA, 5mA
Current - Collector Cutoff (Max): 100nA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce: 120 @ 1mA, 5V
Supplier Device Package: S-Mini
Current - Collector (Ic) (Max): 100 mA
Voltage - Collector Emitter Breakdown (Max): 50 V
Power - Max: 200 mW
Frequency - Transition: 250 MHz
Resistor - Base (R1): 4.7 kOhms
на замовлення 10350 шт:
термін постачання 21-31 дні (днів)
Кількість Ціна
27+11.91 грн
43+7.19 грн
100+4.43 грн
500+3.02 грн
1000+2.65 грн
Мінімальне замовлення: 27
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TLP2370(E TLP2370_datasheet_en_20170609.pdf?did=30500&prodName=TLP2370
TLP2370(E
Виробник: Toshiba Semiconductor and Storage
Description: HIGH SPEED PHOTOCOUPLER; 5PIN SO
Packaging: Tube
Package / Case: 6-SOIC (0.179", 4.55mm Width), 5 Leads
Output Type: Push-Pull, Totem Pole
Mounting Type: Surface Mount
Operating Temperature: -40°C ~ 125°C
Voltage - Supply: 2.7V ~ 5.5V
Voltage - Forward (Vf) (Typ): 1.5V
Data Rate: 20Mbps
Input Type: DC
Voltage - Isolation: 3750Vrms
Current - DC Forward (If) (Max): 8mA
Inputs - Side 1/Side 2: 1/0
Supplier Device Package: 6-SO, 5 Lead
Rise / Fall Time (Typ): 3ns, 2ns
Common Mode Transient Immunity (Min): 20kV/µs
Propagation Delay tpLH / tpHL (Max): 60ns, 60ns
Number of Channels: 1
Current - Output / Channel: 10 mA
на замовлення 125 шт:
термін постачання 21-31 дні (днів)
Кількість Ціна
3+136.55 грн
10+84.25 грн
125+58.28 грн
Мінімальне замовлення: 3
В кошику  од. на суму  грн.
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