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TLP3414S(TP,E TLP3414S(TP,E Toshiba Semiconductor and Storage Description: PHOTORELAY; FAST SWITCHING; ROHS
Packaging: Tape & Reel (TR)
Package / Case: 4-SMD (0.079", 2.00mm)
Output Type: DC
Mounting Type: Surface Mount
Voltage - Input: 1.24VDC
Circuit: SPST-NO (1 Form A)
Operating Temperature: -40°C ~ 110°C
Load Current: 250 mA
Supplier Device Package: S-VSON4T (2x1.45)
Voltage - Load: 0 V ~ 40 V
On-State Resistance (Max): 3 Ohms
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TLP3414S(TP,E TLP3414S(TP,E Toshiba Semiconductor and Storage Description: PHOTORELAY; FAST SWITCHING; ROHS
Packaging: Cut Tape (CT)
Package / Case: 4-SMD (0.079", 2.00mm)
Output Type: DC
Mounting Type: Surface Mount
Voltage - Input: 1.24VDC
Circuit: SPST-NO (1 Form A)
Operating Temperature: -40°C ~ 110°C
Load Current: 250 mA
Supplier Device Package: S-VSON4T (2x1.45)
Voltage - Load: 0 V ~ 40 V
On-State Resistance (Max): 3 Ohms
на замовлення 2464 шт:
термін постачання 21-31 дні (днів)
1+400.92 грн
10+289.05 грн
100+231.96 грн
500+196.88 грн
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CRG09A,LQ(M CRG09A,LQ(M Toshiba Semiconductor and Storage CRG09A_datasheet_en_20190709.pdf?did=63646&prodName=CRG09A Description: DIODE STANDARD 400V 1A SFLAT
Packaging: Tape & Reel (TR)
Package / Case: SOD-123F
Mounting Type: Surface Mount
Speed: Standard Recovery >500ns, > 200mA (Io)
Technology: Standard
Current - Average Rectified (Io): 1A
Supplier Device Package: S-FLAT (1.6x3.5)
Operating Temperature - Junction: 150°C (Max)
Voltage - DC Reverse (Vr) (Max): 400 V
Voltage - Forward (Vf) (Max) @ If: 1.1 V @ 700 mA
Current - Reverse Leakage @ Vr: 5 µA @ 400 V
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TK024N60Z1,S1F TK024N60Z1,S1F Toshiba Semiconductor and Storage TK024N60Z1_datasheet_en_20240522.pdf?did=158083&prodName=TK024N60Z1 Description: N-CH MOSFET 600V 0.024OHM 10V
Packaging: Tube
Package / Case: TO-247-3
Mounting Type: Through Hole
Operating Temperature: 150°C
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 80A (Ta)
Rds On (Max) @ Id, Vgs: 24mOhm @ 33A, 10V
Power Dissipation (Max): 506W (Tc)
Vgs(th) (Max) @ Id: 4V @ 3.84mA
Supplier Device Package: TO-247
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±30V
Drain to Source Voltage (Vdss): 600 V
Gate Charge (Qg) (Max) @ Vgs: 140 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 8420 pF @ 300 V
на замовлення 117 шт:
термін постачання 21-31 дні (днів)
1+1070.17 грн
50+598.66 грн
100+561.23 грн
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XCUZ18V,H3XHF(B XCUZ18V,H3XHF(B Toshiba Semiconductor and Storage docget.jsp?did=153645&prodName=XCUZ18V Description: TVS DIODE 13VWM 28.5VC USC
Packaging: Tape & Reel (TR)
Package / Case: SC-76, SOD-323
Mounting Type: Surface Mount
Type: Zener
Operating Temperature: 150°C (TJ)
Capacitance @ Frequency: 31pF @ 1MHz
Current - Peak Pulse (10/1000µs): 5.1A (8/20µs)
Voltage - Reverse Standoff (Typ): 13V (Max)
Supplier Device Package: USC
Unidirectional Channels: 1
Voltage - Breakdown (Min): 16.8V
Voltage - Clamping (Max) @ Ipp: 28.5V (Typ)
Power - Peak Pulse: 200W
Power Line Protection: No
Grade: Automotive
Qualification: AEC-Q101
на замовлення 3000 шт:
термін постачання 21-31 дні (днів)
3000+2.83 грн
Мінімальне замовлення: 3000
В кошику  од. на суму  грн.
XCUZ18V,H3XHF(B XCUZ18V,H3XHF(B Toshiba Semiconductor and Storage docget.jsp?did=153645&prodName=XCUZ18V Description: TVS DIODE 13VWM 28.5VC USC
Packaging: Cut Tape (CT)
Package / Case: SC-76, SOD-323
Mounting Type: Surface Mount
Type: Zener
Operating Temperature: 150°C (TJ)
Capacitance @ Frequency: 31pF @ 1MHz
Current - Peak Pulse (10/1000µs): 5.1A (8/20µs)
Voltage - Reverse Standoff (Typ): 13V (Max)
Supplier Device Package: USC
Unidirectional Channels: 1
Voltage - Breakdown (Min): 16.8V
Voltage - Clamping (Max) @ Ipp: 28.5V (Typ)
Power - Peak Pulse: 200W
Power Line Protection: No
Grade: Automotive
Qualification: AEC-Q101
на замовлення 5824 шт:
термін постачання 21-31 дні (днів)
23+14.29 грн
37+8.41 грн
100+5.16 грн
500+3.53 грн
1000+3.10 грн
Мінімальне замовлення: 23
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7UL1G00NX,ELF Toshiba Semiconductor and Storage Description: 1 GATE LOGIC, 2-INPUT/NAND, XSON
Packaging: Tape & Reel (TR)
Package / Case: 6-XFDFN
Mounting Type: Surface Mount
Logic Type: NAND Gate
Operating Temperature: -40°C ~ 125°C
Voltage - Supply: 0.9V ~ 3.6V
Current - Output High, Low: 8mA, 8mA
Number of Inputs: 2
Supplier Device Package: 6-MP6D (1.45x1)
Input Logic Level - High: 1.7V ~ 2V
Input Logic Level - Low: 0.7V ~ 0.8V
Max Propagation Delay @ V, Max CL: 6.6ns @ 3.3V, 30pF
Number of Circuits: 1
Current - Quiescent (Max): 1 µA
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7UL1G00NX,ELF Toshiba Semiconductor and Storage Description: 1 GATE LOGIC, 2-INPUT/NAND, XSON
Packaging: Cut Tape (CT)
Package / Case: 6-XFDFN
Mounting Type: Surface Mount
Logic Type: NAND Gate
Operating Temperature: -40°C ~ 125°C
Voltage - Supply: 0.9V ~ 3.6V
Current - Output High, Low: 8mA, 8mA
Number of Inputs: 2
Supplier Device Package: 6-MP6D (1.45x1)
Input Logic Level - High: 1.7V ~ 2V
Input Logic Level - Low: 0.7V ~ 0.8V
Max Propagation Delay @ V, Max CL: 6.6ns @ 3.3V, 30pF
Number of Circuits: 1
Current - Quiescent (Max): 1 µA
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TRS30N120HB,S1Q TRS30N120HB,S1Q Toshiba Semiconductor and Storage TRS30N120HB_datasheet_en_20240612.pdf?did=158285&prodName=TRS30N120HB Description: 1200V30A SIC SCHOTTKY BARR DIODE
Packaging: Tube
Package / Case: TO-247-3
Mounting Type: Through Hole
Speed: No Recovery Time > 500mA (Io)
Reverse Recovery Time (trr): 0 ns
Technology: SiC (Silicon Carbide) Schottky
Diode Configuration: 1 Pair Common Cathode
Current - Average Rectified (Io) (per Diode): 41A
Supplier Device Package: TO-247
Operating Temperature - Junction: 175°C
Voltage - DC Reverse (Vr) (Max): 1200 V
Voltage - Forward (Vf) (Max) @ If: 1.45 V @ 15 A
Current - Reverse Leakage @ Vr: 100 µA @ 1200 V
на замовлення 30 шт:
термін постачання 21-31 дні (днів)
1+1081.28 грн
30+641.38 грн
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DCM341A01(AS,EL) Toshiba Semiconductor and Storage Description: 4-CH (3:1) AECQ HIGH SPEED DIGIT
Packaging: Tape & Reel (TR)
Package / Case: 16-SOIC (0.295", 7.50mm Width)
Mounting Type: Surface Mount
Type: SPI
Operating Temperature: -40°C ~ 125°C
Voltage - Supply: 3V ~ 5.5V
Data Rate: 50Mbps
Technology: Magnetic Coupling
Voltage - Isolation: 5000Vrms
Inputs - Side 1/Side 2: 3/1
Supplier Device Package: 16-SOIC
Rise / Fall Time (Typ): 0.9ns, 0.9ns
Common Mode Transient Immunity (Min): 100kV/µs (Typ)
Propagation Delay tpLH / tpHL (Max): 18.4ns, 18.4ns
Isolated Power: No
Channel Type: Unidirectional
Pulse Width Distortion (Max): 5.1ns
Grade: Automotive
Number of Channels: 4
Qualification: AEC-Q100
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DCM341A01(AS,EL) Toshiba Semiconductor and Storage Description: 4-CH (3:1) AECQ HIGH SPEED DIGIT
Packaging: Cut Tape (CT)
Package / Case: 16-SOIC (0.295", 7.50mm Width)
Mounting Type: Surface Mount
Type: SPI
Operating Temperature: -40°C ~ 125°C
Voltage - Supply: 3V ~ 5.5V
Data Rate: 50Mbps
Technology: Magnetic Coupling
Voltage - Isolation: 5000Vrms
Inputs - Side 1/Side 2: 3/1
Supplier Device Package: 16-SOIC
Rise / Fall Time (Typ): 0.9ns, 0.9ns
Common Mode Transient Immunity (Min): 100kV/µs (Typ)
Propagation Delay tpLH / tpHL (Max): 18.4ns, 18.4ns
Isolated Power: No
Channel Type: Unidirectional
Pulse Width Distortion (Max): 5.1ns
Grade: Automotive
Number of Channels: 4
Qualification: AEC-Q100
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TC74VCX164245ELF TC74VCX164245ELF Toshiba Semiconductor and Storage Description: IC TRANSLATOR BIDIR 48TSSOP
Packaging: Tape & Reel (TR)
Package / Case: 48-TFSOP (0.240", 6.10mm Width)
Output Type: Tri-State
Mounting Type: Surface Mount
Operating Temperature: -40°C ~ 85°C (TA)
Supplier Device Package: 48-TSSOP
Channel Type: Bidirectional
Translator Type: Voltage Level
Channels per Circuit: 8
Voltage - VCCA: 1.65 V ~ 2.7 V
Voltage - VCCB: 2.3 V ~ 3.6 V
Number of Circuits: 2
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TBD62503AFG,EL TBD62503AFG,EL Toshiba Semiconductor and Storage TBD62502AFG_datasheet_en_20150724.pdf?did=29878&prodName=TBD62502AFG Description: IC PWR SWITCH N-CHAN 1:1 16SOP
Packaging: Tape & Reel (TR)
Package / Case: 16-SOIC (0.173", 4.40mm Width)
Output Type: N-Channel
Mounting Type: Surface Mount
Number of Outputs: 7
Interface: On/Off
Switch Type: General Purpose
Operating Temperature: -40°C ~ 85°C (TA)
Output Configuration: Low Side
Input Type: Inverting
Voltage - Load: 50V (Max)
Voltage - Supply (Vcc/Vdd): Not Required
Current - Output (Max): 300mA
Ratio - Input:Output: 1:1
Supplier Device Package: 16-SOP
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TBD62503AFG,EL TBD62503AFG,EL Toshiba Semiconductor and Storage TBD62502AFG_datasheet_en_20150724.pdf?did=29878&prodName=TBD62502AFG Description: IC PWR SWITCH N-CHAN 1:1 16SOP
Packaging: Cut Tape (CT)
Package / Case: 16-SOIC (0.173", 4.40mm Width)
Output Type: N-Channel
Mounting Type: Surface Mount
Number of Outputs: 7
Interface: On/Off
Switch Type: General Purpose
Operating Temperature: -40°C ~ 85°C (TA)
Output Configuration: Low Side
Input Type: Inverting
Voltage - Load: 50V (Max)
Voltage - Supply (Vcc/Vdd): Not Required
Current - Output (Max): 300mA
Ratio - Input:Output: 1:1
Supplier Device Package: 16-SOP
на замовлення 723 шт:
термін постачання 21-31 дні (днів)
3+148.46 грн
10+105.73 грн
25+96.45 грн
100+80.86 грн
250+76.27 грн
500+73.50 грн
Мінімальне замовлення: 3
В кошику  од. на суму  грн.
TBD62503AFWG,EL TBD62503AFWG,EL Toshiba Semiconductor and Storage TBD62502AFG_datasheet_en_20150724.pdf?did=29878&prodName=TBD62502AFG Description: IC PWR SWITCH N-CHAN 1:1 16SOP
Packaging: Tape & Reel (TR)
Package / Case: 16-SOIC (0.154", 3.90mm Width)
Output Type: N-Channel
Mounting Type: Surface Mount
Number of Outputs: 7
Interface: On/Off
Switch Type: General Purpose
Operating Temperature: -40°C ~ 85°C (TA)
Output Configuration: Low Side
Input Type: Inverting
Voltage - Load: 50V (Max)
Voltage - Supply (Vcc/Vdd): Not Required
Current - Output (Max): 300mA
Ratio - Input:Output: 1:1
Supplier Device Package: 16-SOP
на замовлення 6000 шт:
термін постачання 21-31 дні (днів)
2000+26.02 грн
Мінімальне замовлення: 2000
В кошику  од. на суму  грн.
TBD62503AFWG,EL TBD62503AFWG,EL Toshiba Semiconductor and Storage TBD62502AFG_datasheet_en_20150724.pdf?did=29878&prodName=TBD62502AFG Description: IC PWR SWITCH N-CHAN 1:1 16SOP
Packaging: Cut Tape (CT)
Package / Case: 16-SOIC (0.154", 3.90mm Width)
Output Type: N-Channel
Mounting Type: Surface Mount
Number of Outputs: 7
Interface: On/Off
Switch Type: General Purpose
Operating Temperature: -40°C ~ 85°C (TA)
Output Configuration: Low Side
Input Type: Inverting
Voltage - Load: 50V (Max)
Voltage - Supply (Vcc/Vdd): Not Required
Current - Output (Max): 300mA
Ratio - Input:Output: 1:1
Supplier Device Package: 16-SOP
на замовлення 9374 шт:
термін постачання 21-31 дні (днів)
3+119.08 грн
10+70.18 грн
25+58.71 грн
100+42.93 грн
250+36.95 грн
500+33.27 грн
1000+29.69 грн
Мінімальне замовлення: 3
В кошику  од. на суму  грн.
TC74VCX16245(EL,F) TC74VCX16245(EL,F) Toshiba Semiconductor and Storage docget.jsp?did=69808&prodName=TC74VCX16245 Description: 16-BIT TRANSCEIVER, TSSOP48
Packaging: Tape & Reel (TR)
Package / Case: 48-TFSOP (0.240", 6.10mm Width)
Output Type: 3-State
Mounting Type: Surface Mount
Number of Elements: 2
Logic Type: Transceiver, Non-Inverting
Operating Temperature: -40°C ~ 85°C (TA)
Voltage - Supply: 1.8V ~ 3.6V
Number of Bits per Element: 8
Current - Output High, Low: 24mA, 24mA
Supplier Device Package: 48-TSSOP
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1SS361FV,L3XGF 1SS361FV,L3XGF Toshiba Semiconductor and Storage docget.jsp?did=4394&prodName=1SS361FV Description: 80V/0.1 A SWITCHING DIODE, SOT-7
Packaging: Tape & Reel (TR)
Package / Case: SOT-723
Mounting Type: Surface Mount
Speed: Small Signal =< 200mA (Io), Any Speed
Reverse Recovery Time (trr): 4 ns
Technology: Standard
Diode Configuration: 1 Pair Common Cathode
Current - Average Rectified (Io) (per Diode): 100mA
Supplier Device Package: VESM
Operating Temperature - Junction: 150°C
Grade: Automotive
Voltage - DC Reverse (Vr) (Max): 80 V
Voltage - Forward (Vf) (Max) @ If: 1.2 V @ 100 mA
Current - Reverse Leakage @ Vr: 500 nA @ 80 V
Qualification: AEC-Q101
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TLX9910(TPL,F TLX9910(TPL,F Toshiba Semiconductor and Storage TLX9910_datasheet_en_20230920.pdf?did=154287&prodName=TLX9910 Description: OPTOISO 3.75KV 1CH PHVOLT 6-SOP
Packaging: Tape & Reel (TR)
Package / Case: 6-SOIC (0.173", 4.40mm Width), 4 Leads
Output Type: Photovoltaic
Mounting Type: Surface Mount
Operating Temperature: -40°C ~ 125°C
Voltage - Forward (Vf) (Typ): 1.65V
Input Type: DC
Voltage - Isolation: 3750Vrms
Supplier Device Package: 6-SOP
Voltage - Output (Max): 13.5V
Turn On / Turn Off Time (Typ): 100µs, 500µs
Grade: Automotive
Number of Channels: 1
Current - DC Forward (If) (Max): 30 mA
Qualification: AEC-Q101
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TLX9910(TPL,F TLX9910(TPL,F Toshiba Semiconductor and Storage TLX9910_datasheet_en_20230920.pdf?did=154287&prodName=TLX9910 Description: OPTOISO 3.75KV 1CH PHVOLT 6-SOP
Packaging: Cut Tape (CT)
Package / Case: 6-SOIC (0.173", 4.40mm Width), 4 Leads
Output Type: Photovoltaic
Mounting Type: Surface Mount
Operating Temperature: -40°C ~ 125°C
Voltage - Forward (Vf) (Typ): 1.65V
Input Type: DC
Voltage - Isolation: 3750Vrms
Supplier Device Package: 6-SOP
Voltage - Output (Max): 13.5V
Turn On / Turn Off Time (Typ): 100µs, 500µs
Grade: Automotive
Number of Channels: 1
Current - DC Forward (If) (Max): 30 mA
Qualification: AEC-Q101
на замовлення 2011 шт:
термін постачання 21-31 дні (днів)
1+344.55 грн
10+246.39 грн
100+195.82 грн
500+163.02 грн
1000+156.27 грн
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CMZ12(TE12L,Q,M) CMZ12(TE12L,Q,M) Toshiba Semiconductor and Storage CMZ12_datasheet_en_20150515.pdf?did=21287&prodName=CMZ12 Description: DIODE ZENER 12V 2W MFLAT
Packaging: Tape & Reel (TR)
Tolerance: ±10%
Package / Case: SOD-128
Mounting Type: Surface Mount
Operating Temperature: -40°C ~ 150°C (TJ)
Voltage - Zener (Nom) (Vz): 12 V
Impedance (Max) (Zzt): 30 Ohms
Supplier Device Package: M-FLAT (2.4x3.8)
Power - Max: 2 W
Voltage - Forward (Vf) (Max) @ If: 1.2 V @ 200 mA
Current - Reverse Leakage @ Vr: 10 µA @ 8 V
на замовлення 9000 шт:
термін постачання 21-31 дні (днів)
3000+12.89 грн
6000+11.42 грн
9000+10.49 грн
Мінімальне замовлення: 3000
В кошику  од. на суму  грн.
CMZ12(TE12L,Q,M) CMZ12(TE12L,Q,M) Toshiba Semiconductor and Storage CMZ12_datasheet_en_20150515.pdf?did=21287&prodName=CMZ12 Description: DIODE ZENER 12V 2W MFLAT
Packaging: Cut Tape (CT)
Tolerance: ±10%
Package / Case: SOD-128
Mounting Type: Surface Mount
Operating Temperature: -40°C ~ 150°C (TJ)
Voltage - Zener (Nom) (Vz): 12 V
Impedance (Max) (Zzt): 30 Ohms
Supplier Device Package: M-FLAT (2.4x3.8)
Power - Max: 2 W
Voltage - Forward (Vf) (Max) @ If: 1.2 V @ 200 mA
Current - Reverse Leakage @ Vr: 10 µA @ 8 V
на замовлення 10208 шт:
термін постачання 21-31 дні (днів)
8+42.87 грн
11+28.13 грн
100+19.18 грн
500+14.16 грн
1000+12.90 грн
Мінімальне замовлення: 8
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TB67S539SFTG(EL) Toshiba Semiconductor and Storage Description: 40V/2A 32 MICRO-STEP STEPPING MO
Packaging: Tape & Reel (TR)
Package / Case: 32-VFQFN Exposed Pad
Mounting Type: Surface Mount
Function: Driver - Fully Integrated, Control and Power Stage
Current - Output: 1.8A
Interface: Logic
Operating Temperature: -40°C ~ 85°C
Output Configuration: Half Bridge (4)
Voltage - Supply: 4.5V ~ 33V
Applications: General Purpose
Technology: DMOS
Voltage - Load: 4.5V ~ 33V
Supplier Device Package: 32-VQFN (5x5)
Motor Type - Stepper: Bipolar
Motor Type - AC, DC: Brushless DC (BLDC)
Step Resolution: 1, 1/2, 1/4, 1/8, 1/16, 1/32
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DCM341B01(AS,EL) DCM341B01(AS,EL) Toshiba Semiconductor and Storage Description: 4-CH (3:1) AECQ HIGH SPEED DIGIT
Packaging: Tape & Reel (TR)
Package / Case: 16-SOIC (0.295", 7.50mm Width)
Mounting Type: Surface Mount
Type: SPI
Operating Temperature: -40°C ~ 125°C
Voltage - Supply: 3V ~ 5.5V
Data Rate: 50Mbps
Technology: Magnetic Coupling
Voltage - Isolation: 5000Vrms
Inputs - Side 1/Side 2: 3/1
Supplier Device Package: 16-SOIC
Rise / Fall Time (Typ): 0.9ns, 0.9ns
Common Mode Transient Immunity (Min): 100kV/µs (Typ)
Propagation Delay tpLH / tpHL (Max): 18.4ns, 18.4ns
Isolated Power: No
Channel Type: Unidirectional
Pulse Width Distortion (Max): 5.1ns
Grade: Automotive
Number of Channels: 4
Qualification: AEC-Q100
на замовлення 1500 шт:
термін постачання 21-31 дні (днів)
1500+132.49 грн
Мінімальне замовлення: 1500
В кошику  од. на суму  грн.
DCM341B01(AS,EL) DCM341B01(AS,EL) Toshiba Semiconductor and Storage Description: 4-CH (3:1) AECQ HIGH SPEED DIGIT
Packaging: Cut Tape (CT)
Package / Case: 16-SOIC (0.295", 7.50mm Width)
Mounting Type: Surface Mount
Type: SPI
Operating Temperature: -40°C ~ 125°C
Voltage - Supply: 3V ~ 5.5V
Data Rate: 50Mbps
Technology: Magnetic Coupling
Voltage - Isolation: 5000Vrms
Inputs - Side 1/Side 2: 3/1
Supplier Device Package: 16-SOIC
Rise / Fall Time (Typ): 0.9ns, 0.9ns
Common Mode Transient Immunity (Min): 100kV/µs (Typ)
Propagation Delay tpLH / tpHL (Max): 18.4ns, 18.4ns
Isolated Power: No
Channel Type: Unidirectional
Pulse Width Distortion (Max): 5.1ns
Grade: Automotive
Number of Channels: 4
Qualification: AEC-Q100
на замовлення 1500 шт:
термін постачання 21-31 дні (днів)
2+243.72 грн
10+176.21 грн
25+161.61 грн
100+136.59 грн
250+129.42 грн
500+125.08 грн
Мінімальне замовлення: 2
В кошику  од. на суму  грн.
DCM341L01(AS,EL) DCM341L01(AS,EL) Toshiba Semiconductor and Storage standard-digital-isolators.html Description: 4-CH (3:1) AECQ HIGH SPEED DIGIT
Packaging: Tape & Reel (TR)
Package / Case: 16-SOIC (0.295", 7.50mm Width)
Mounting Type: Surface Mount
Type: SPI
Operating Temperature: -40°C ~ 125°C
Voltage - Supply: 3V ~ 5.5V
Data Rate: 50Mbps
Technology: Magnetic Coupling
Voltage - Isolation: 5000Vrms
Inputs - Side 1/Side 2: 3/1
Supplier Device Package: 16-SOIC
Rise / Fall Time (Typ): 0.9ns, 0.9ns
Common Mode Transient Immunity (Min): 100kV/µs (Typ)
Propagation Delay tpLH / tpHL (Max): 18.4ns, 18.4ns
Isolated Power: No
Channel Type: Unidirectional
Pulse Width Distortion (Max): 5.1ns
Grade: Automotive
Number of Channels: 4
Qualification: AEC-Q100
на замовлення 1500 шт:
термін постачання 21-31 дні (днів)
1500+132.49 грн
Мінімальне замовлення: 1500
В кошику  од. на суму  грн.
DCM341L01(AS,EL) DCM341L01(AS,EL) Toshiba Semiconductor and Storage standard-digital-isolators.html Description: 4-CH (3:1) AECQ HIGH SPEED DIGIT
Packaging: Cut Tape (CT)
Package / Case: 16-SOIC (0.295", 7.50mm Width)
Mounting Type: Surface Mount
Type: SPI
Operating Temperature: -40°C ~ 125°C
Voltage - Supply: 3V ~ 5.5V
Data Rate: 50Mbps
Technology: Magnetic Coupling
Voltage - Isolation: 5000Vrms
Inputs - Side 1/Side 2: 3/1
Supplier Device Package: 16-SOIC
Rise / Fall Time (Typ): 0.9ns, 0.9ns
Common Mode Transient Immunity (Min): 100kV/µs (Typ)
Propagation Delay tpLH / tpHL (Max): 18.4ns, 18.4ns
Isolated Power: No
Channel Type: Unidirectional
Pulse Width Distortion (Max): 5.1ns
Grade: Automotive
Number of Channels: 4
Qualification: AEC-Q100
на замовлення 1500 шт:
термін постачання 21-31 дні (днів)
2+243.72 грн
10+176.21 грн
25+161.61 грн
100+136.59 грн
250+129.42 грн
500+125.08 грн
Мінімальне замовлення: 2
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TCR3UF08A,LM TCR3UF08A,LM Toshiba Semiconductor and Storage docget.jsp?did=68764&prodName=TCR3UF08A Description: 300 MA FIXED OUTPUT LDO REGULATO
Packaging: Tape & Reel (TR)
Package / Case: SC-74A, SOT-753
Output Type: Fixed
Mounting Type: Surface Mount
Current - Output: 300mA
Operating Temperature: -40°C ~ 85°C
Output Configuration: Positive
Current - Quiescent (Iq): 580 nA
Voltage - Input (Max): 5.5V
Number of Regulators: 1
Supplier Device Package: SMV
Voltage - Output (Min/Fixed): 0.8V
Control Features: Enable
PSRR: 70dB (1kHz)
Voltage Dropout (Max): 1.257V @ 300mA
Protection Features: Over Current, Over Temperature
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TRS40N120HB,S1Q TRS40N120HB,S1Q Toshiba Semiconductor and Storage TRS40N120HB_datasheet_en_20240612.pdf?did=158293&prodName=TRS40N120HB Description: 1200V40A SIC SCHOTTKY BARRIER DI
Packaging: Tube
Package / Case: TO-247-3
Mounting Type: Through Hole
Speed: No Recovery Time > 500mA (Io)
Reverse Recovery Time (trr): 0 ns
Technology: SiC (Silicon Carbide) Schottky
Diode Configuration: 1 Pair Common Cathode
Current - Average Rectified (Io) (per Diode): 51A
Supplier Device Package: TO-247
Operating Temperature - Junction: 175°C
Voltage - DC Reverse (Vr) (Max): 1200 V
Voltage - Forward (Vf) (Max) @ If: 1.45 V @ 20 A
Current - Reverse Leakage @ Vr: 130 µA @ 1200 V
на замовлення 30 шт:
термін постачання 21-31 дні (днів)
1+1300.40 грн
30+784.08 грн
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TRS30H120H,S1Q TRS30H120H,S1Q Toshiba Semiconductor and Storage TRS30H120H_datasheet_en_20240612.pdf?did=158281&prodName=TRS30H120H Description: 1200 V/30 A SIC SCHOTTKY BARRIER
Packaging: Tube
Package / Case: TO-247-2
Mounting Type: Through Hole
Speed: No Recovery Time > 500mA (Io)
Reverse Recovery Time (trr): 0 ns
Technology: SiC (Silicon Carbide) Schottky
Capacitance @ Vr, F: 3205pF @ 1V, 1MHz
Current - Average Rectified (Io): 83A
Supplier Device Package: TO-247-2L
Operating Temperature - Junction: 175°C
Voltage - DC Reverse (Vr) (Max): 1200 V
Voltage - Forward (Vf) (Max) @ If: 1.45 V @ 30 A
Current - Reverse Leakage @ Vr: 180 µA @ 1200 V
на замовлення 60 шт:
термін постачання 21-31 дні (днів)
1+1072.55 грн
30+636.00 грн
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MKZ20V,LM MKZ20V,LM Toshiba Semiconductor and Storage docget.jsp?did=155143&prodName=MKZ20V Description: TVS DIODE 17.6VWM 30.5V SOT233
Packaging: Tape & Reel (TR)
Package / Case: TO-236-3, SC-59, SOT-23-3
Mounting Type: Surface Mount
Type: Zener
Operating Temperature: 150°C (TJ)
Applications: General Purpose
Capacitance @ Frequency: 29pF @ 1MHz
Current - Peak Pulse (10/1000µs): 5A (8/20µs)
Voltage - Reverse Standoff (Typ): 17.6V (Max)
Supplier Device Package: SOT-23-3
Unidirectional Channels: 1
Voltage - Breakdown (Min): 18.8V
Voltage - Clamping (Max) @ Ipp: 30.5V (Typ)
Power - Peak Pulse: 200W
Power Line Protection: No
на замовлення 3000 шт:
термін постачання 21-31 дні (днів)
3000+2.47 грн
Мінімальне замовлення: 3000
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MKZ20V,LM MKZ20V,LM Toshiba Semiconductor and Storage docget.jsp?did=155143&prodName=MKZ20V Description: TVS DIODE 17.6VWM 30.5V SOT233
Packaging: Cut Tape (CT)
Package / Case: TO-236-3, SC-59, SOT-23-3
Mounting Type: Surface Mount
Type: Zener
Operating Temperature: 150°C (TJ)
Applications: General Purpose
Capacitance @ Frequency: 29pF @ 1MHz
Current - Peak Pulse (10/1000µs): 5A (8/20µs)
Voltage - Reverse Standoff (Typ): 17.6V (Max)
Supplier Device Package: SOT-23-3
Unidirectional Channels: 1
Voltage - Breakdown (Min): 18.8V
Voltage - Clamping (Max) @ Ipp: 30.5V (Typ)
Power - Peak Pulse: 200W
Power Line Protection: No
на замовлення 5990 шт:
термін постачання 21-31 дні (днів)
25+12.70 грн
42+7.34 грн
100+4.53 грн
500+3.09 грн
1000+2.72 грн
Мінімальне замовлення: 25
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RN1304,LF RN1304,LF Toshiba Semiconductor and Storage docget.jsp?did=18776&prodName=RN1304 Description: TRANS PREBIAS NPN 50V 0.1A SC70
Packaging: Tape & Reel (TR)
Package / Case: SC-70, SOT-323
Mounting Type: Surface Mount
Transistor Type: NPN - Pre-Biased
Vce Saturation (Max) @ Ib, Ic: 300mV @ 250µA, 5mA
Current - Collector Cutoff (Max): 500nA
DC Current Gain (hFE) (Min) @ Ic, Vce: 80 @ 10mA, 5V
Supplier Device Package: SC-70
Current - Collector (Ic) (Max): 100 mA
Voltage - Collector Emitter Breakdown (Max): 50 V
Power - Max: 100 mW
Frequency - Transition: 250 MHz
Resistor - Base (R1): 47 kOhms
Resistor - Emitter Base (R2): 47 kOhms
Resistors Included: R1 and R2
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RN1304,LF RN1304,LF Toshiba Semiconductor and Storage docget.jsp?did=18776&prodName=RN1304 Description: TRANS PREBIAS NPN 50V 0.1A SC70
Packaging: Cut Tape (CT)
Package / Case: SC-70, SOT-323
Mounting Type: Surface Mount
Transistor Type: NPN - Pre-Biased
Vce Saturation (Max) @ Ib, Ic: 300mV @ 250µA, 5mA
Current - Collector Cutoff (Max): 500nA
DC Current Gain (hFE) (Min) @ Ic, Vce: 80 @ 10mA, 5V
Supplier Device Package: SC-70
Current - Collector (Ic) (Max): 100 mA
Voltage - Collector Emitter Breakdown (Max): 50 V
Power - Max: 100 mW
Frequency - Transition: 250 MHz
Resistor - Base (R1): 47 kOhms
Resistor - Emitter Base (R2): 47 kOhms
Resistors Included: R1 and R2
на замовлення 2540 шт:
термін постачання 21-31 дні (днів)
23+14.29 грн
38+8.10 грн
100+4.99 грн
500+3.42 грн
1000+3.00 грн
Мінімальне замовлення: 23
В кошику  од. на суму  грн.
TLP620M(Y-TP1,E TLP620M(Y-TP1,E Toshiba Semiconductor and Storage Description: OPTOISOLATOR 5KV 1CH TRANS 4-SMD
Packaging: Tape & Reel (TR)
Package / Case: 4-SMD (0.300", 7.62mm)
Output Type: Transistor
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 125°C
Voltage - Forward (Vf) (Typ): 1.25V
Input Type: AC, DC
Current - Output / Channel: 50mA
Voltage - Isolation: 5000Vrms
Current Transfer Ratio (Min): 50% @ 5mA
Vce Saturation (Max): 300mV
Current Transfer Ratio (Max): 600% @ 5mA
Supplier Device Package: 4-SMD
Voltage - Output (Max): 80V
Turn On / Turn Off Time (Typ): 3µs, 3µs
Rise / Fall Time (Typ): 2µs, 3µs
Number of Channels: 1
Current - DC Forward (If) (Max): 50 mA
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TLP620M(TP5,E TLP620M(TP5,E Toshiba Semiconductor and Storage Description: OPTOISOLATOR 5KV 1CH TRANS 4-SMD
Packaging: Tape & Reel (TR)
Package / Case: 4-SMD, Gull Wing
Output Type: Transistor
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 125°C
Voltage - Forward (Vf) (Typ): 1.25V
Input Type: AC, DC
Current - Output / Channel: 50mA
Voltage - Isolation: 5000Vrms
Current Transfer Ratio (Min): 50% @ 5mA
Vce Saturation (Max): 300mV
Current Transfer Ratio (Max): 600% @ 5mA
Supplier Device Package: 4-SMD
Voltage - Output (Max): 80V
Turn On / Turn Off Time (Typ): 3µs, 3µs
Rise / Fall Time (Typ): 2µs, 3µs
Number of Channels: 1
Current - DC Forward (If) (Max): 50 mA
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TLP620M(Y-TP5,E TLP620M(Y-TP5,E Toshiba Semiconductor and Storage Description: OPTOISOLATOR 5KV 1CH TRANS 4-SMD
Packaging: Tape & Reel (TR)
Package / Case: 4-SMD, Gull Wing
Output Type: Transistor
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 125°C
Voltage - Forward (Vf) (Typ): 1.25V
Input Type: AC, DC
Current - Output / Channel: 50mA
Voltage - Isolation: 5000Vrms
Current Transfer Ratio (Min): 50% @ 5mA
Vce Saturation (Max): 300mV
Current Transfer Ratio (Max): 600% @ 5mA
Supplier Device Package: 4-SMD
Voltage - Output (Max): 80V
Turn On / Turn Off Time (Typ): 3µs, 3µs
Rise / Fall Time (Typ): 2µs, 3µs
Number of Channels: 1
Current - DC Forward (If) (Max): 50 mA
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TLP620M(GR-TP5,E TLP620M(GR-TP5,E Toshiba Semiconductor and Storage Description: OPTOISOLATOR 5KV 1CH TRANS 4-SMD
Packaging: Tape & Reel (TR)
Package / Case: 4-SMD, Gull Wing
Output Type: Transistor
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 125°C
Voltage - Forward (Vf) (Typ): 1.25V
Input Type: AC, DC
Current - Output / Channel: 50mA
Voltage - Isolation: 5000Vrms
Current Transfer Ratio (Min): 50% @ 5mA
Vce Saturation (Max): 300mV
Current Transfer Ratio (Max): 600% @ 5mA
Supplier Device Package: 4-SMD
Voltage - Output (Max): 80V
Turn On / Turn Off Time (Typ): 3µs, 3µs
Rise / Fall Time (Typ): 2µs, 3µs
Number of Channels: 1
Current - DC Forward (If) (Max): 50 mA
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TMPM380FWFG TMPM380FWFG Toshiba Semiconductor and Storage Description: IC MCU 32BIT 128KB FLASH 100LQFP
Packaging: Tray
Package / Case: 100-LQFP
Mounting Type: Surface Mount
Speed: 40MHz
Program Memory Size: 128KB (128K x 8)
RAM Size: 12K x 8
Operating Temperature: -40°C ~ 85°C (TA)
Oscillator Type: External
Program Memory Type: FLASH
Core Processor: ARM® Cortex®-M3
Data Converters: A/D 18x12b
Core Size: 32-Bit Single-Core
Voltage - Supply (Vcc/Vdd): 4V ~ 5.5V
Connectivity: I2C, SIO, UART/USART
Peripherals: DMA, LVD, WDT
Supplier Device Package: 100-LQFP (14x14)
Number of I/O: 83
DigiKey Programmable: Not Verified
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TPCC8093,L1Q TPCC8093,L1Q Toshiba Semiconductor and Storage Description: MOSFET N-CH 20V 21A 8TSON
Packaging: Tape & Reel (TR)
Package / Case: 8-PowerVDFN
Mounting Type: Surface Mount
Operating Temperature: 150°C
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 21A (Ta)
Rds On (Max) @ Id, Vgs: 5.8mOhm @ 10.5A, 4.5V
Power Dissipation (Max): 1.9W (Ta), 30W (Tc)
Vgs(th) (Max) @ Id: 1.2V @ 500µA
Supplier Device Package: 8-TSON Advance (3.1x3.1)
Drive Voltage (Max Rds On, Min Rds On): 2.5V, 4.5V
Vgs (Max): ±12V
Drain to Source Voltage (Vdss): 20 V
Gate Charge (Qg) (Max) @ Vgs: 16 nC @ 5 V
Input Capacitance (Ciss) (Max) @ Vds: 1860 pF @ 10 V
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TC7WPB9306FK,LF TC7WPB9306FK,LF Toshiba Semiconductor and Storage docget.jsp?did=12388&prodName=TC7WPB9306FK Description: IC BUS SWITCH 2 X 1:1 8-SSOP
Packaging: Cut Tape (CT)
Package / Case: 8-VFSOP (0.091", 2.30mm Width)
Mounting Type: Surface Mount
Circuit: 2 x 1:1
Type: Bus Switch
Operating Temperature: -40°C ~ 85°C
Voltage - Supply: 1.65V ~ 5V, 2.3V ~ 5.5V
Independent Circuits: 1
Voltage Supply Source: Dual Supply
Supplier Device Package: 8-SSOP
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7UL1G34NX,ELF 7UL1G34NX,ELF Toshiba Semiconductor and Storage docget.jsp?did=156995&prodName=7UL1G34NX Description: 1 GATE LOGIC, BUFFER, XSON6, NON
Packaging: Tape & Reel (TR)
Package / Case: 6-XFDFN
Mounting Type: Surface Mount
Number of Elements: 1
Logic Type: Buffer, Non-Inverting
Operating Temperature: -40°C ~ 85°C (TA)
Voltage - Supply: 0.9V ~ 3.6V
Number of Bits per Element: 1
Current - Output High, Low: 8mA, 8mA
Supplier Device Package: 6-MP6D (1.45x1)
на замовлення 5000 шт:
термін постачання 21-31 дні (днів)
5000+5.98 грн
Мінімальне замовлення: 5000
В кошику  од. на суму  грн.
7UL1G34NX,ELF 7UL1G34NX,ELF Toshiba Semiconductor and Storage docget.jsp?did=156995&prodName=7UL1G34NX Description: 1 GATE LOGIC, BUFFER, XSON6, NON
Packaging: Cut Tape (CT)
Package / Case: 6-XFDFN
Mounting Type: Surface Mount
Number of Elements: 1
Logic Type: Buffer, Non-Inverting
Operating Temperature: -40°C ~ 85°C (TA)
Voltage - Supply: 0.9V ~ 3.6V
Number of Bits per Element: 1
Current - Output High, Low: 8mA, 8mA
Supplier Device Package: 6-MP6D (1.45x1)
на замовлення 5000 шт:
термін постачання 21-31 дні (днів)
20+15.88 грн
30+10.32 грн
34+9.11 грн
100+7.32 грн
250+6.72 грн
500+6.36 грн
1000+5.97 грн
2500+5.79 грн
Мінімальне замовлення: 20
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TMPM4NRF10XBG Toshiba Semiconductor and Storage Description: MCU, DATA PROCESSING, ARM CORTEX
Packaging: Tray
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2SD2695,T6F(J 2SD2695,T6F(J Toshiba Semiconductor and Storage 2SD2695_2009-12-21.pdf Description: TRANS NPN 60V 2A TO-92MOD
Packaging: Bulk
Package / Case: TO-226-3, TO-92-3 Long Body
Mounting Type: Through Hole
Transistor Type: NPN
Operating Temperature: 150°C (TJ)
Vce Saturation (Max) @ Ib, Ic: 1.5V @ 1mA, 1A
Current - Collector Cutoff (Max): 10µA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce: 2000 @ 1A, 2V
Frequency - Transition: 100MHz
Supplier Device Package: TO-92MOD
Current - Collector (Ic) (Max): 2 A
Voltage - Collector Emitter Breakdown (Max): 60 V
Power - Max: 900 mW
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TMPM4GNF10FG TMPM4GNF10FG Toshiba Semiconductor and Storage TMPM3HMFDAFG_datasheet_en_20250221.pdf Description: IC MCU 32BIT 1MB FLASH 100LQFP
Packaging: Tray
Package / Case: 100-LQFP
Mounting Type: Surface Mount
Speed: 200MHz
Program Memory Size: 1MB (1M x 8)
RAM Size: 256K x 8
Operating Temperature: -40°C ~ 85°C
Oscillator Type: External, Internal
Program Memory Type: FLASH
EEPROM Size: 32K x 8
Core Processor: ARM® Cortex®-M4F
Data Converters: A/D 24x12b SAR; D/A 2x8b
Core Size: 32-Bit
Voltage - Supply (Vcc/Vdd): 2.7V ~ 3.6V
Connectivity: EBI/EMI, FIFO, I2C, IrDA, SIO, SPI, UART/USART
Peripherals: DMA, I2S, LVD, POR, PWM, WDT
Supplier Device Package: 100-LQFP (14x14)
Number of I/O: 91
DigiKey Programmable: Not Verified
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DCM340D01(AS,EL) DCM340D01(AS,EL) Toshiba Semiconductor and Storage standard-digital-isolators.html Description: 4-CH (4:0) AECQ HIGH SPEED DIGIT
Packaging: Tape & Reel (TR)
Package / Case: 16-SOIC (0.295", 7.50mm Width)
Mounting Type: Surface Mount
Type: SPI
Operating Temperature: -40°C ~ 125°C
Voltage - Supply: 3V ~ 5.5V
Data Rate: 50Mbps
Technology: Magnetic Coupling
Voltage - Isolation: 5000Vrms
Inputs - Side 1/Side 2: 4/0
Supplier Device Package: 16-SOIC
Rise / Fall Time (Typ): 0.9ns, 0.9ns
Common Mode Transient Immunity (Min): 100kV/µs (Typ)
Propagation Delay tpLH / tpHL (Max): 18.4ns, 18.4ns
Isolated Power: No
Channel Type: Unidirectional
Pulse Width Distortion (Max): 5.1ns
Grade: Automotive
Number of Channels: 4
Qualification: AEC-Q100
на замовлення 1500 шт:
термін постачання 21-31 дні (днів)
1500+126.29 грн
Мінімальне замовлення: 1500
В кошику  од. на суму  грн.
DCM340D01(AS,EL) DCM340D01(AS,EL) Toshiba Semiconductor and Storage standard-digital-isolators.html Description: 4-CH (4:0) AECQ HIGH SPEED DIGIT
Packaging: Cut Tape (CT)
Package / Case: 16-SOIC (0.295", 7.50mm Width)
Mounting Type: Surface Mount
Type: SPI
Operating Temperature: -40°C ~ 125°C
Voltage - Supply: 3V ~ 5.5V
Data Rate: 50Mbps
Technology: Magnetic Coupling
Voltage - Isolation: 5000Vrms
Inputs - Side 1/Side 2: 4/0
Supplier Device Package: 16-SOIC
Rise / Fall Time (Typ): 0.9ns, 0.9ns
Common Mode Transient Immunity (Min): 100kV/µs (Typ)
Propagation Delay tpLH / tpHL (Max): 18.4ns, 18.4ns
Isolated Power: No
Channel Type: Unidirectional
Pulse Width Distortion (Max): 5.1ns
Grade: Automotive
Number of Channels: 4
Qualification: AEC-Q100
на замовлення 1500 шт:
термін постачання 21-31 дні (днів)
2+232.61 грн
10+167.96 грн
25+154.06 грн
100+130.20 грн
250+123.35 грн
500+119.23 грн
Мінімальне замовлення: 2
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TCB001HQ TCB001HQ Toshiba Semiconductor and Storage Description: AUDIO POWER AMPLIFIER, CLASS-AB,
Packaging: Tube
Package / Case: 25-SIP Formed Leads
Mounting Type: Through Hole
Supplier Device Package: 25-HZIP
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TB62D786FTG,EL TB62D786FTG,EL Toshiba Semiconductor and Storage Description: IC LED DRVR LIN PWM 40MA 24VQFN
Packaging: Tape & Reel (TR)
Package / Case: 24-VFQFN Exposed Pad
Voltage - Output: 28V
Mounting Type: Surface Mount
Number of Outputs: 9
Type: Linear
Operating Temperature: -40°C ~ 85°C (TA)
Current - Output / Channel: 40mA
Internal Switch(s): Yes
Supplier Device Package: 24-VQFN (4x4)
Dimming: PWM
Voltage - Supply (Min): 7V
Voltage - Supply (Max): 28V
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TB62D786FTG,EL TB62D786FTG,EL Toshiba Semiconductor and Storage Description: IC LED DRVR LIN PWM 40MA 24VQFN
Packaging: Cut Tape (CT)
Package / Case: 24-VFQFN Exposed Pad
Voltage - Output: 28V
Mounting Type: Surface Mount
Number of Outputs: 9
Type: Linear
Operating Temperature: -40°C ~ 85°C (TA)
Current - Output / Channel: 40mA
Internal Switch(s): Yes
Supplier Device Package: 24-VQFN (4x4)
Dimming: PWM
Voltage - Supply (Min): 7V
Voltage - Supply (Max): 28V
товару немає в наявності
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TRS10H120H,S1Q TRS10H120H,S1Q Toshiba Semiconductor and Storage docget.jsp?did=158257&prodName=TRS10H120H Description: DIODE SIL CARB 1200V 38A TO2472L
Packaging: Tube
Package / Case: TO-247-2
Mounting Type: Through Hole
Speed: No Recovery Time > 500mA (Io)
Reverse Recovery Time (trr): 0 ns
Technology: SiC (Silicon Carbide) Schottky
Capacitance @ Vr, F: 1148pF @ 1V, 1MHz
Current - Average Rectified (Io): 38A
Supplier Device Package: TO-247-2L
Operating Temperature - Junction: 175°C
Voltage - DC Reverse (Vr) (Max): 1200 V
Voltage - Forward (Vf) (Max) @ If: 1.45 V @ 10 A
Current - Reverse Leakage @ Vr: 80 µA @ 1200 V
на замовлення 40 шт:
термін постачання 21-31 дні (днів)
1+620.82 грн
30+423.99 грн
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TRS15H120H,S1Q TRS15H120H,S1Q Toshiba Semiconductor and Storage docget.jsp?did=158267&prodName=TRS15H120H Description: DIODE SIL CARB 1200V 50A TO2472L
Packaging: Tube
Package / Case: TO-247-2
Mounting Type: Through Hole
Speed: No Recovery Time > 500mA (Io)
Reverse Recovery Time (trr): 0 ns
Technology: SiC (Silicon Carbide) Schottky
Capacitance @ Vr, F: 1673pF @ 1V, 1MHz
Current - Average Rectified (Io): 50A
Supplier Device Package: TO-247-2L
Operating Temperature - Junction: 175°C
Voltage - DC Reverse (Vr) (Max): 1200 V
Voltage - Forward (Vf) (Max) @ If: 1.45 V @ 15 A
Current - Reverse Leakage @ Vr: 100 µA @ 1200 V
на замовлення 60 шт:
термін постачання 21-31 дні (днів)
1+823.27 грн
30+522.32 грн
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TRS40H120H,S1Q TRS40H120H,S1Q Toshiba Semiconductor and Storage TRS40H120H_datasheet_en_20240903.pdf?did=158289&prodName=TRS40H120H Description: 1200 V/40 A SIC SCHOTTKY BARRIER
Packaging: Tube
Package / Case: TO-247-2
Mounting Type: Through Hole
Speed: No Recovery Time > 500mA (Io)
Reverse Recovery Time (trr): 0 ns
Technology: SiC (Silicon Carbide) Schottky
Capacitance @ Vr, F: 4368pF @ 1V, 1MHz
Current - Average Rectified (Io): 102A
Supplier Device Package: TO-247-2L
Operating Temperature - Junction: 175°C
Voltage - DC Reverse (Vr) (Max): 1200 V
Voltage - Forward (Vf) (Max) @ If: 1.45 V @ 40 A
Current - Reverse Leakage @ Vr: 230 µA @ 1.2 kV
на замовлення 60 шт:
термін постачання 21-31 дні (днів)
1+1297.22 грн
30+781.87 грн
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TLP532(BLL,F) Toshiba Semiconductor and Storage Description: PHOTOCOUPLER
Packaging: Tube
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TLP373(F) Toshiba Semiconductor and Storage Description: PHOTOCOUPLER
Packaging: Tube
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74HC4538D 74HC4538D Toshiba Semiconductor and Storage 74HC4538D_datasheet_en_20170124.pdf?did=37371&prodName=74HC4538D Description: IC MMV 2-CIR 25-NS 16-SOIC
Packaging: Cut Tape (CT)
Package / Case: 16-SOIC (0.154", 3.90mm Width)
Mounting Type: Surface Mount
Logic Type: Monostable
Operating Temperature: -40°C ~ 125°C (TA)
Propagation Delay: 25 ns
Independent Circuits: 2
Current - Output High, Low: 5.2mA, 5.2mA
Schmitt Trigger Input: Yes
Supplier Device Package: 16-SOIC
Voltage - Supply: 2 V ~ 6 V
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74LV4T125FT Toshiba Semiconductor and Storage Description: TSSOP14 UNIDIRECTIONAL LEVEL SHI
Packaging: Tape & Reel (TR)
Package / Case: 14-TSSOP (0.173", 4.40mm Width)
Output Type: 3-State
Mounting Type: Surface Mount
Number of Elements: 4
Logic Type: Buffer, Non-Inverting
Operating Temperature: -40°C ~ 125°C (TA)
Voltage - Supply: 1.65V ~ 5.5V
Number of Bits per Element: 1
Current - Output High, Low: 16mA, 16mA
Supplier Device Package: 14-TSSOP
Grade: Automotive
Qualification: AEC-Q100
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TLX9150M(TPL,F TLX9150M(TPL,F Toshiba Semiconductor and Storage TLX9150M_datasheet_en_20240920.pdf?did=159447&prodName=TLX9150M Description: PHOTORELAY 900V AEC-Q101
Packaging: Tape & Reel (TR)
Package / Case: 12-SOIC (0.295", 7.50mm Width), 8 Leads
Output Type: AC
Mounting Type: Surface Mount
Voltage - Input: 1.65VDC
Circuit: SPST-NO (1 Form A)
Operating Temperature: -40°C ~ 125°C
Load Current: 50 mA
Supplier Device Package: 12-SO
Grade: Automotive
Voltage - Load: 0 V ~ 900 V
On-State Resistance (Max): 250 Ohms
Qualification: AEC-Q101
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TLX9150M(TPL,F TLX9150M(TPL,F Toshiba Semiconductor and Storage TLX9150M_datasheet_en_20240920.pdf?did=159447&prodName=TLX9150M Description: PHOTORELAY 900V AEC-Q101
Packaging: Cut Tape (CT)
Package / Case: 12-SOIC (0.295", 7.50mm Width), 8 Leads
Output Type: AC
Mounting Type: Surface Mount
Voltage - Input: 1.65VDC
Circuit: SPST-NO (1 Form A)
Operating Temperature: -40°C ~ 125°C
Load Current: 50 mA
Supplier Device Package: 12-SO
Grade: Automotive
Voltage - Load: 0 V ~ 900 V
On-State Resistance (Max): 250 Ohms
Qualification: AEC-Q101
на замовлення 1375 шт:
термін постачання 21-31 дні (днів)
1+394.56 грн
10+284.16 грн
100+227.88 грн
500+193.02 грн
В кошику  од. на суму  грн.
TLP3414S(TP,E
TLP3414S(TP,E
Виробник: Toshiba Semiconductor and Storage
Description: PHOTORELAY; FAST SWITCHING; ROHS
Packaging: Tape & Reel (TR)
Package / Case: 4-SMD (0.079", 2.00mm)
Output Type: DC
Mounting Type: Surface Mount
Voltage - Input: 1.24VDC
Circuit: SPST-NO (1 Form A)
Operating Temperature: -40°C ~ 110°C
Load Current: 250 mA
Supplier Device Package: S-VSON4T (2x1.45)
Voltage - Load: 0 V ~ 40 V
On-State Resistance (Max): 3 Ohms
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TLP3414S(TP,E
TLP3414S(TP,E
Виробник: Toshiba Semiconductor and Storage
Description: PHOTORELAY; FAST SWITCHING; ROHS
Packaging: Cut Tape (CT)
Package / Case: 4-SMD (0.079", 2.00mm)
Output Type: DC
Mounting Type: Surface Mount
Voltage - Input: 1.24VDC
Circuit: SPST-NO (1 Form A)
Operating Temperature: -40°C ~ 110°C
Load Current: 250 mA
Supplier Device Package: S-VSON4T (2x1.45)
Voltage - Load: 0 V ~ 40 V
On-State Resistance (Max): 3 Ohms
на замовлення 2464 шт:
термін постачання 21-31 дні (днів)
Кількість Ціна
1+400.92 грн
10+289.05 грн
100+231.96 грн
500+196.88 грн
В кошику  од. на суму  грн.
CRG09A,LQ(M CRG09A_datasheet_en_20190709.pdf?did=63646&prodName=CRG09A
CRG09A,LQ(M
Виробник: Toshiba Semiconductor and Storage
Description: DIODE STANDARD 400V 1A SFLAT
Packaging: Tape & Reel (TR)
Package / Case: SOD-123F
Mounting Type: Surface Mount
Speed: Standard Recovery >500ns, > 200mA (Io)
Technology: Standard
Current - Average Rectified (Io): 1A
Supplier Device Package: S-FLAT (1.6x3.5)
Operating Temperature - Junction: 150°C (Max)
Voltage - DC Reverse (Vr) (Max): 400 V
Voltage - Forward (Vf) (Max) @ If: 1.1 V @ 700 mA
Current - Reverse Leakage @ Vr: 5 µA @ 400 V
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TK024N60Z1,S1F TK024N60Z1_datasheet_en_20240522.pdf?did=158083&prodName=TK024N60Z1
TK024N60Z1,S1F
Виробник: Toshiba Semiconductor and Storage
Description: N-CH MOSFET 600V 0.024OHM 10V
Packaging: Tube
Package / Case: TO-247-3
Mounting Type: Through Hole
Operating Temperature: 150°C
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 80A (Ta)
Rds On (Max) @ Id, Vgs: 24mOhm @ 33A, 10V
Power Dissipation (Max): 506W (Tc)
Vgs(th) (Max) @ Id: 4V @ 3.84mA
Supplier Device Package: TO-247
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±30V
Drain to Source Voltage (Vdss): 600 V
Gate Charge (Qg) (Max) @ Vgs: 140 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 8420 pF @ 300 V
на замовлення 117 шт:
термін постачання 21-31 дні (днів)
Кількість Ціна
1+1070.17 грн
50+598.66 грн
100+561.23 грн
В кошику  од. на суму  грн.
XCUZ18V,H3XHF(B docget.jsp?did=153645&prodName=XCUZ18V
XCUZ18V,H3XHF(B
Виробник: Toshiba Semiconductor and Storage
Description: TVS DIODE 13VWM 28.5VC USC
Packaging: Tape & Reel (TR)
Package / Case: SC-76, SOD-323
Mounting Type: Surface Mount
Type: Zener
Operating Temperature: 150°C (TJ)
Capacitance @ Frequency: 31pF @ 1MHz
Current - Peak Pulse (10/1000µs): 5.1A (8/20µs)
Voltage - Reverse Standoff (Typ): 13V (Max)
Supplier Device Package: USC
Unidirectional Channels: 1
Voltage - Breakdown (Min): 16.8V
Voltage - Clamping (Max) @ Ipp: 28.5V (Typ)
Power - Peak Pulse: 200W
Power Line Protection: No
Grade: Automotive
Qualification: AEC-Q101
на замовлення 3000 шт:
термін постачання 21-31 дні (днів)
Кількість Ціна
3000+2.83 грн
Мінімальне замовлення: 3000
В кошику  од. на суму  грн.
XCUZ18V,H3XHF(B docget.jsp?did=153645&prodName=XCUZ18V
XCUZ18V,H3XHF(B
Виробник: Toshiba Semiconductor and Storage
Description: TVS DIODE 13VWM 28.5VC USC
Packaging: Cut Tape (CT)
Package / Case: SC-76, SOD-323
Mounting Type: Surface Mount
Type: Zener
Operating Temperature: 150°C (TJ)
Capacitance @ Frequency: 31pF @ 1MHz
Current - Peak Pulse (10/1000µs): 5.1A (8/20µs)
Voltage - Reverse Standoff (Typ): 13V (Max)
Supplier Device Package: USC
Unidirectional Channels: 1
Voltage - Breakdown (Min): 16.8V
Voltage - Clamping (Max) @ Ipp: 28.5V (Typ)
Power - Peak Pulse: 200W
Power Line Protection: No
Grade: Automotive
Qualification: AEC-Q101
на замовлення 5824 шт:
термін постачання 21-31 дні (днів)
Кількість Ціна
23+14.29 грн
37+8.41 грн
100+5.16 грн
500+3.53 грн
1000+3.10 грн
Мінімальне замовлення: 23
В кошику  од. на суму  грн.
7UL1G00NX,ELF
Виробник: Toshiba Semiconductor and Storage
Description: 1 GATE LOGIC, 2-INPUT/NAND, XSON
Packaging: Tape & Reel (TR)
Package / Case: 6-XFDFN
Mounting Type: Surface Mount
Logic Type: NAND Gate
Operating Temperature: -40°C ~ 125°C
Voltage - Supply: 0.9V ~ 3.6V
Current - Output High, Low: 8mA, 8mA
Number of Inputs: 2
Supplier Device Package: 6-MP6D (1.45x1)
Input Logic Level - High: 1.7V ~ 2V
Input Logic Level - Low: 0.7V ~ 0.8V
Max Propagation Delay @ V, Max CL: 6.6ns @ 3.3V, 30pF
Number of Circuits: 1
Current - Quiescent (Max): 1 µA
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7UL1G00NX,ELF
Виробник: Toshiba Semiconductor and Storage
Description: 1 GATE LOGIC, 2-INPUT/NAND, XSON
Packaging: Cut Tape (CT)
Package / Case: 6-XFDFN
Mounting Type: Surface Mount
Logic Type: NAND Gate
Operating Temperature: -40°C ~ 125°C
Voltage - Supply: 0.9V ~ 3.6V
Current - Output High, Low: 8mA, 8mA
Number of Inputs: 2
Supplier Device Package: 6-MP6D (1.45x1)
Input Logic Level - High: 1.7V ~ 2V
Input Logic Level - Low: 0.7V ~ 0.8V
Max Propagation Delay @ V, Max CL: 6.6ns @ 3.3V, 30pF
Number of Circuits: 1
Current - Quiescent (Max): 1 µA
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TRS30N120HB,S1Q TRS30N120HB_datasheet_en_20240612.pdf?did=158285&prodName=TRS30N120HB
TRS30N120HB,S1Q
Виробник: Toshiba Semiconductor and Storage
Description: 1200V30A SIC SCHOTTKY BARR DIODE
Packaging: Tube
Package / Case: TO-247-3
Mounting Type: Through Hole
Speed: No Recovery Time > 500mA (Io)
Reverse Recovery Time (trr): 0 ns
Technology: SiC (Silicon Carbide) Schottky
Diode Configuration: 1 Pair Common Cathode
Current - Average Rectified (Io) (per Diode): 41A
Supplier Device Package: TO-247
Operating Temperature - Junction: 175°C
Voltage - DC Reverse (Vr) (Max): 1200 V
Voltage - Forward (Vf) (Max) @ If: 1.45 V @ 15 A
Current - Reverse Leakage @ Vr: 100 µA @ 1200 V
на замовлення 30 шт:
термін постачання 21-31 дні (днів)
Кількість Ціна
1+1081.28 грн
30+641.38 грн
В кошику  од. на суму  грн.
DCM341A01(AS,EL)
Виробник: Toshiba Semiconductor and Storage
Description: 4-CH (3:1) AECQ HIGH SPEED DIGIT
Packaging: Tape & Reel (TR)
Package / Case: 16-SOIC (0.295", 7.50mm Width)
Mounting Type: Surface Mount
Type: SPI
Operating Temperature: -40°C ~ 125°C
Voltage - Supply: 3V ~ 5.5V
Data Rate: 50Mbps
Technology: Magnetic Coupling
Voltage - Isolation: 5000Vrms
Inputs - Side 1/Side 2: 3/1
Supplier Device Package: 16-SOIC
Rise / Fall Time (Typ): 0.9ns, 0.9ns
Common Mode Transient Immunity (Min): 100kV/µs (Typ)
Propagation Delay tpLH / tpHL (Max): 18.4ns, 18.4ns
Isolated Power: No
Channel Type: Unidirectional
Pulse Width Distortion (Max): 5.1ns
Grade: Automotive
Number of Channels: 4
Qualification: AEC-Q100
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DCM341A01(AS,EL)
Виробник: Toshiba Semiconductor and Storage
Description: 4-CH (3:1) AECQ HIGH SPEED DIGIT
Packaging: Cut Tape (CT)
Package / Case: 16-SOIC (0.295", 7.50mm Width)
Mounting Type: Surface Mount
Type: SPI
Operating Temperature: -40°C ~ 125°C
Voltage - Supply: 3V ~ 5.5V
Data Rate: 50Mbps
Technology: Magnetic Coupling
Voltage - Isolation: 5000Vrms
Inputs - Side 1/Side 2: 3/1
Supplier Device Package: 16-SOIC
Rise / Fall Time (Typ): 0.9ns, 0.9ns
Common Mode Transient Immunity (Min): 100kV/µs (Typ)
Propagation Delay tpLH / tpHL (Max): 18.4ns, 18.4ns
Isolated Power: No
Channel Type: Unidirectional
Pulse Width Distortion (Max): 5.1ns
Grade: Automotive
Number of Channels: 4
Qualification: AEC-Q100
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TC74VCX164245ELF
TC74VCX164245ELF
Виробник: Toshiba Semiconductor and Storage
Description: IC TRANSLATOR BIDIR 48TSSOP
Packaging: Tape & Reel (TR)
Package / Case: 48-TFSOP (0.240", 6.10mm Width)
Output Type: Tri-State
Mounting Type: Surface Mount
Operating Temperature: -40°C ~ 85°C (TA)
Supplier Device Package: 48-TSSOP
Channel Type: Bidirectional
Translator Type: Voltage Level
Channels per Circuit: 8
Voltage - VCCA: 1.65 V ~ 2.7 V
Voltage - VCCB: 2.3 V ~ 3.6 V
Number of Circuits: 2
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TBD62503AFG,EL TBD62502AFG_datasheet_en_20150724.pdf?did=29878&prodName=TBD62502AFG
TBD62503AFG,EL
Виробник: Toshiba Semiconductor and Storage
Description: IC PWR SWITCH N-CHAN 1:1 16SOP
Packaging: Tape & Reel (TR)
Package / Case: 16-SOIC (0.173", 4.40mm Width)
Output Type: N-Channel
Mounting Type: Surface Mount
Number of Outputs: 7
Interface: On/Off
Switch Type: General Purpose
Operating Temperature: -40°C ~ 85°C (TA)
Output Configuration: Low Side
Input Type: Inverting
Voltage - Load: 50V (Max)
Voltage - Supply (Vcc/Vdd): Not Required
Current - Output (Max): 300mA
Ratio - Input:Output: 1:1
Supplier Device Package: 16-SOP
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TBD62503AFG,EL TBD62502AFG_datasheet_en_20150724.pdf?did=29878&prodName=TBD62502AFG
TBD62503AFG,EL
Виробник: Toshiba Semiconductor and Storage
Description: IC PWR SWITCH N-CHAN 1:1 16SOP
Packaging: Cut Tape (CT)
Package / Case: 16-SOIC (0.173", 4.40mm Width)
Output Type: N-Channel
Mounting Type: Surface Mount
Number of Outputs: 7
Interface: On/Off
Switch Type: General Purpose
Operating Temperature: -40°C ~ 85°C (TA)
Output Configuration: Low Side
Input Type: Inverting
Voltage - Load: 50V (Max)
Voltage - Supply (Vcc/Vdd): Not Required
Current - Output (Max): 300mA
Ratio - Input:Output: 1:1
Supplier Device Package: 16-SOP
на замовлення 723 шт:
термін постачання 21-31 дні (днів)
Кількість Ціна
3+148.46 грн
10+105.73 грн
25+96.45 грн
100+80.86 грн
250+76.27 грн
500+73.50 грн
Мінімальне замовлення: 3
В кошику  од. на суму  грн.
TBD62503AFWG,EL TBD62502AFG_datasheet_en_20150724.pdf?did=29878&prodName=TBD62502AFG
TBD62503AFWG,EL
Виробник: Toshiba Semiconductor and Storage
Description: IC PWR SWITCH N-CHAN 1:1 16SOP
Packaging: Tape & Reel (TR)
Package / Case: 16-SOIC (0.154", 3.90mm Width)
Output Type: N-Channel
Mounting Type: Surface Mount
Number of Outputs: 7
Interface: On/Off
Switch Type: General Purpose
Operating Temperature: -40°C ~ 85°C (TA)
Output Configuration: Low Side
Input Type: Inverting
Voltage - Load: 50V (Max)
Voltage - Supply (Vcc/Vdd): Not Required
Current - Output (Max): 300mA
Ratio - Input:Output: 1:1
Supplier Device Package: 16-SOP
на замовлення 6000 шт:
термін постачання 21-31 дні (днів)
Кількість Ціна
2000+26.02 грн
Мінімальне замовлення: 2000
В кошику  од. на суму  грн.
TBD62503AFWG,EL TBD62502AFG_datasheet_en_20150724.pdf?did=29878&prodName=TBD62502AFG
TBD62503AFWG,EL
Виробник: Toshiba Semiconductor and Storage
Description: IC PWR SWITCH N-CHAN 1:1 16SOP
Packaging: Cut Tape (CT)
Package / Case: 16-SOIC (0.154", 3.90mm Width)
Output Type: N-Channel
Mounting Type: Surface Mount
Number of Outputs: 7
Interface: On/Off
Switch Type: General Purpose
Operating Temperature: -40°C ~ 85°C (TA)
Output Configuration: Low Side
Input Type: Inverting
Voltage - Load: 50V (Max)
Voltage - Supply (Vcc/Vdd): Not Required
Current - Output (Max): 300mA
Ratio - Input:Output: 1:1
Supplier Device Package: 16-SOP
на замовлення 9374 шт:
термін постачання 21-31 дні (днів)
Кількість Ціна
3+119.08 грн
10+70.18 грн
25+58.71 грн
100+42.93 грн
250+36.95 грн
500+33.27 грн
1000+29.69 грн
Мінімальне замовлення: 3
В кошику  од. на суму  грн.
TC74VCX16245(EL,F) docget.jsp?did=69808&prodName=TC74VCX16245
TC74VCX16245(EL,F)
Виробник: Toshiba Semiconductor and Storage
Description: 16-BIT TRANSCEIVER, TSSOP48
Packaging: Tape & Reel (TR)
Package / Case: 48-TFSOP (0.240", 6.10mm Width)
Output Type: 3-State
Mounting Type: Surface Mount
Number of Elements: 2
Logic Type: Transceiver, Non-Inverting
Operating Temperature: -40°C ~ 85°C (TA)
Voltage - Supply: 1.8V ~ 3.6V
Number of Bits per Element: 8
Current - Output High, Low: 24mA, 24mA
Supplier Device Package: 48-TSSOP
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1SS361FV,L3XGF docget.jsp?did=4394&prodName=1SS361FV
1SS361FV,L3XGF
Виробник: Toshiba Semiconductor and Storage
Description: 80V/0.1 A SWITCHING DIODE, SOT-7
Packaging: Tape & Reel (TR)
Package / Case: SOT-723
Mounting Type: Surface Mount
Speed: Small Signal =< 200mA (Io), Any Speed
Reverse Recovery Time (trr): 4 ns
Technology: Standard
Diode Configuration: 1 Pair Common Cathode
Current - Average Rectified (Io) (per Diode): 100mA
Supplier Device Package: VESM
Operating Temperature - Junction: 150°C
Grade: Automotive
Voltage - DC Reverse (Vr) (Max): 80 V
Voltage - Forward (Vf) (Max) @ If: 1.2 V @ 100 mA
Current - Reverse Leakage @ Vr: 500 nA @ 80 V
Qualification: AEC-Q101
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TLX9910(TPL,F TLX9910_datasheet_en_20230920.pdf?did=154287&prodName=TLX9910
TLX9910(TPL,F
Виробник: Toshiba Semiconductor and Storage
Description: OPTOISO 3.75KV 1CH PHVOLT 6-SOP
Packaging: Tape & Reel (TR)
Package / Case: 6-SOIC (0.173", 4.40mm Width), 4 Leads
Output Type: Photovoltaic
Mounting Type: Surface Mount
Operating Temperature: -40°C ~ 125°C
Voltage - Forward (Vf) (Typ): 1.65V
Input Type: DC
Voltage - Isolation: 3750Vrms
Supplier Device Package: 6-SOP
Voltage - Output (Max): 13.5V
Turn On / Turn Off Time (Typ): 100µs, 500µs
Grade: Automotive
Number of Channels: 1
Current - DC Forward (If) (Max): 30 mA
Qualification: AEC-Q101
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TLX9910(TPL,F TLX9910_datasheet_en_20230920.pdf?did=154287&prodName=TLX9910
TLX9910(TPL,F
Виробник: Toshiba Semiconductor and Storage
Description: OPTOISO 3.75KV 1CH PHVOLT 6-SOP
Packaging: Cut Tape (CT)
Package / Case: 6-SOIC (0.173", 4.40mm Width), 4 Leads
Output Type: Photovoltaic
Mounting Type: Surface Mount
Operating Temperature: -40°C ~ 125°C
Voltage - Forward (Vf) (Typ): 1.65V
Input Type: DC
Voltage - Isolation: 3750Vrms
Supplier Device Package: 6-SOP
Voltage - Output (Max): 13.5V
Turn On / Turn Off Time (Typ): 100µs, 500µs
Grade: Automotive
Number of Channels: 1
Current - DC Forward (If) (Max): 30 mA
Qualification: AEC-Q101
на замовлення 2011 шт:
термін постачання 21-31 дні (днів)
Кількість Ціна
1+344.55 грн
10+246.39 грн
100+195.82 грн
500+163.02 грн
1000+156.27 грн
В кошику  од. на суму  грн.
CMZ12(TE12L,Q,M) CMZ12_datasheet_en_20150515.pdf?did=21287&prodName=CMZ12
CMZ12(TE12L,Q,M)
Виробник: Toshiba Semiconductor and Storage
Description: DIODE ZENER 12V 2W MFLAT
Packaging: Tape & Reel (TR)
Tolerance: ±10%
Package / Case: SOD-128
Mounting Type: Surface Mount
Operating Temperature: -40°C ~ 150°C (TJ)
Voltage - Zener (Nom) (Vz): 12 V
Impedance (Max) (Zzt): 30 Ohms
Supplier Device Package: M-FLAT (2.4x3.8)
Power - Max: 2 W
Voltage - Forward (Vf) (Max) @ If: 1.2 V @ 200 mA
Current - Reverse Leakage @ Vr: 10 µA @ 8 V
на замовлення 9000 шт:
термін постачання 21-31 дні (днів)
Кількість Ціна
3000+12.89 грн
6000+11.42 грн
9000+10.49 грн
Мінімальне замовлення: 3000
В кошику  од. на суму  грн.
CMZ12(TE12L,Q,M) CMZ12_datasheet_en_20150515.pdf?did=21287&prodName=CMZ12
CMZ12(TE12L,Q,M)
Виробник: Toshiba Semiconductor and Storage
Description: DIODE ZENER 12V 2W MFLAT
Packaging: Cut Tape (CT)
Tolerance: ±10%
Package / Case: SOD-128
Mounting Type: Surface Mount
Operating Temperature: -40°C ~ 150°C (TJ)
Voltage - Zener (Nom) (Vz): 12 V
Impedance (Max) (Zzt): 30 Ohms
Supplier Device Package: M-FLAT (2.4x3.8)
Power - Max: 2 W
Voltage - Forward (Vf) (Max) @ If: 1.2 V @ 200 mA
Current - Reverse Leakage @ Vr: 10 µA @ 8 V
на замовлення 10208 шт:
термін постачання 21-31 дні (днів)
Кількість Ціна
8+42.87 грн
11+28.13 грн
100+19.18 грн
500+14.16 грн
1000+12.90 грн
Мінімальне замовлення: 8
В кошику  од. на суму  грн.
TB67S539SFTG(EL)
Виробник: Toshiba Semiconductor and Storage
Description: 40V/2A 32 MICRO-STEP STEPPING MO
Packaging: Tape & Reel (TR)
Package / Case: 32-VFQFN Exposed Pad
Mounting Type: Surface Mount
Function: Driver - Fully Integrated, Control and Power Stage
Current - Output: 1.8A
Interface: Logic
Operating Temperature: -40°C ~ 85°C
Output Configuration: Half Bridge (4)
Voltage - Supply: 4.5V ~ 33V
Applications: General Purpose
Technology: DMOS
Voltage - Load: 4.5V ~ 33V
Supplier Device Package: 32-VQFN (5x5)
Motor Type - Stepper: Bipolar
Motor Type - AC, DC: Brushless DC (BLDC)
Step Resolution: 1, 1/2, 1/4, 1/8, 1/16, 1/32
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DCM341B01(AS,EL)
DCM341B01(AS,EL)
Виробник: Toshiba Semiconductor and Storage
Description: 4-CH (3:1) AECQ HIGH SPEED DIGIT
Packaging: Tape & Reel (TR)
Package / Case: 16-SOIC (0.295", 7.50mm Width)
Mounting Type: Surface Mount
Type: SPI
Operating Temperature: -40°C ~ 125°C
Voltage - Supply: 3V ~ 5.5V
Data Rate: 50Mbps
Technology: Magnetic Coupling
Voltage - Isolation: 5000Vrms
Inputs - Side 1/Side 2: 3/1
Supplier Device Package: 16-SOIC
Rise / Fall Time (Typ): 0.9ns, 0.9ns
Common Mode Transient Immunity (Min): 100kV/µs (Typ)
Propagation Delay tpLH / tpHL (Max): 18.4ns, 18.4ns
Isolated Power: No
Channel Type: Unidirectional
Pulse Width Distortion (Max): 5.1ns
Grade: Automotive
Number of Channels: 4
Qualification: AEC-Q100
на замовлення 1500 шт:
термін постачання 21-31 дні (днів)
Кількість Ціна
1500+132.49 грн
Мінімальне замовлення: 1500
В кошику  од. на суму  грн.
DCM341B01(AS,EL)
DCM341B01(AS,EL)
Виробник: Toshiba Semiconductor and Storage
Description: 4-CH (3:1) AECQ HIGH SPEED DIGIT
Packaging: Cut Tape (CT)
Package / Case: 16-SOIC (0.295", 7.50mm Width)
Mounting Type: Surface Mount
Type: SPI
Operating Temperature: -40°C ~ 125°C
Voltage - Supply: 3V ~ 5.5V
Data Rate: 50Mbps
Technology: Magnetic Coupling
Voltage - Isolation: 5000Vrms
Inputs - Side 1/Side 2: 3/1
Supplier Device Package: 16-SOIC
Rise / Fall Time (Typ): 0.9ns, 0.9ns
Common Mode Transient Immunity (Min): 100kV/µs (Typ)
Propagation Delay tpLH / tpHL (Max): 18.4ns, 18.4ns
Isolated Power: No
Channel Type: Unidirectional
Pulse Width Distortion (Max): 5.1ns
Grade: Automotive
Number of Channels: 4
Qualification: AEC-Q100
на замовлення 1500 шт:
термін постачання 21-31 дні (днів)
Кількість Ціна
2+243.72 грн
10+176.21 грн
25+161.61 грн
100+136.59 грн
250+129.42 грн
500+125.08 грн
Мінімальне замовлення: 2
В кошику  од. на суму  грн.
DCM341L01(AS,EL) standard-digital-isolators.html
DCM341L01(AS,EL)
Виробник: Toshiba Semiconductor and Storage
Description: 4-CH (3:1) AECQ HIGH SPEED DIGIT
Packaging: Tape & Reel (TR)
Package / Case: 16-SOIC (0.295", 7.50mm Width)
Mounting Type: Surface Mount
Type: SPI
Operating Temperature: -40°C ~ 125°C
Voltage - Supply: 3V ~ 5.5V
Data Rate: 50Mbps
Technology: Magnetic Coupling
Voltage - Isolation: 5000Vrms
Inputs - Side 1/Side 2: 3/1
Supplier Device Package: 16-SOIC
Rise / Fall Time (Typ): 0.9ns, 0.9ns
Common Mode Transient Immunity (Min): 100kV/µs (Typ)
Propagation Delay tpLH / tpHL (Max): 18.4ns, 18.4ns
Isolated Power: No
Channel Type: Unidirectional
Pulse Width Distortion (Max): 5.1ns
Grade: Automotive
Number of Channels: 4
Qualification: AEC-Q100
на замовлення 1500 шт:
термін постачання 21-31 дні (днів)
Кількість Ціна
1500+132.49 грн
Мінімальне замовлення: 1500
В кошику  од. на суму  грн.
DCM341L01(AS,EL) standard-digital-isolators.html
DCM341L01(AS,EL)
Виробник: Toshiba Semiconductor and Storage
Description: 4-CH (3:1) AECQ HIGH SPEED DIGIT
Packaging: Cut Tape (CT)
Package / Case: 16-SOIC (0.295", 7.50mm Width)
Mounting Type: Surface Mount
Type: SPI
Operating Temperature: -40°C ~ 125°C
Voltage - Supply: 3V ~ 5.5V
Data Rate: 50Mbps
Technology: Magnetic Coupling
Voltage - Isolation: 5000Vrms
Inputs - Side 1/Side 2: 3/1
Supplier Device Package: 16-SOIC
Rise / Fall Time (Typ): 0.9ns, 0.9ns
Common Mode Transient Immunity (Min): 100kV/µs (Typ)
Propagation Delay tpLH / tpHL (Max): 18.4ns, 18.4ns
Isolated Power: No
Channel Type: Unidirectional
Pulse Width Distortion (Max): 5.1ns
Grade: Automotive
Number of Channels: 4
Qualification: AEC-Q100
на замовлення 1500 шт:
термін постачання 21-31 дні (днів)
Кількість Ціна
2+243.72 грн
10+176.21 грн
25+161.61 грн
100+136.59 грн
250+129.42 грн
500+125.08 грн
Мінімальне замовлення: 2
В кошику  од. на суму  грн.
TCR3UF08A,LM docget.jsp?did=68764&prodName=TCR3UF08A
TCR3UF08A,LM
Виробник: Toshiba Semiconductor and Storage
Description: 300 MA FIXED OUTPUT LDO REGULATO
Packaging: Tape & Reel (TR)
Package / Case: SC-74A, SOT-753
Output Type: Fixed
Mounting Type: Surface Mount
Current - Output: 300mA
Operating Temperature: -40°C ~ 85°C
Output Configuration: Positive
Current - Quiescent (Iq): 580 nA
Voltage - Input (Max): 5.5V
Number of Regulators: 1
Supplier Device Package: SMV
Voltage - Output (Min/Fixed): 0.8V
Control Features: Enable
PSRR: 70dB (1kHz)
Voltage Dropout (Max): 1.257V @ 300mA
Protection Features: Over Current, Over Temperature
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TRS40N120HB,S1Q TRS40N120HB_datasheet_en_20240612.pdf?did=158293&prodName=TRS40N120HB
TRS40N120HB,S1Q
Виробник: Toshiba Semiconductor and Storage
Description: 1200V40A SIC SCHOTTKY BARRIER DI
Packaging: Tube
Package / Case: TO-247-3
Mounting Type: Through Hole
Speed: No Recovery Time > 500mA (Io)
Reverse Recovery Time (trr): 0 ns
Technology: SiC (Silicon Carbide) Schottky
Diode Configuration: 1 Pair Common Cathode
Current - Average Rectified (Io) (per Diode): 51A
Supplier Device Package: TO-247
Operating Temperature - Junction: 175°C
Voltage - DC Reverse (Vr) (Max): 1200 V
Voltage - Forward (Vf) (Max) @ If: 1.45 V @ 20 A
Current - Reverse Leakage @ Vr: 130 µA @ 1200 V
на замовлення 30 шт:
термін постачання 21-31 дні (днів)
Кількість Ціна
1+1300.40 грн
30+784.08 грн
В кошику  од. на суму  грн.
TRS30H120H,S1Q TRS30H120H_datasheet_en_20240612.pdf?did=158281&prodName=TRS30H120H
TRS30H120H,S1Q
Виробник: Toshiba Semiconductor and Storage
Description: 1200 V/30 A SIC SCHOTTKY BARRIER
Packaging: Tube
Package / Case: TO-247-2
Mounting Type: Through Hole
Speed: No Recovery Time > 500mA (Io)
Reverse Recovery Time (trr): 0 ns
Technology: SiC (Silicon Carbide) Schottky
Capacitance @ Vr, F: 3205pF @ 1V, 1MHz
Current - Average Rectified (Io): 83A
Supplier Device Package: TO-247-2L
Operating Temperature - Junction: 175°C
Voltage - DC Reverse (Vr) (Max): 1200 V
Voltage - Forward (Vf) (Max) @ If: 1.45 V @ 30 A
Current - Reverse Leakage @ Vr: 180 µA @ 1200 V
на замовлення 60 шт:
термін постачання 21-31 дні (днів)
Кількість Ціна
1+1072.55 грн
30+636.00 грн
В кошику  од. на суму  грн.
MKZ20V,LM docget.jsp?did=155143&prodName=MKZ20V
MKZ20V,LM
Виробник: Toshiba Semiconductor and Storage
Description: TVS DIODE 17.6VWM 30.5V SOT233
Packaging: Tape & Reel (TR)
Package / Case: TO-236-3, SC-59, SOT-23-3
Mounting Type: Surface Mount
Type: Zener
Operating Temperature: 150°C (TJ)
Applications: General Purpose
Capacitance @ Frequency: 29pF @ 1MHz
Current - Peak Pulse (10/1000µs): 5A (8/20µs)
Voltage - Reverse Standoff (Typ): 17.6V (Max)
Supplier Device Package: SOT-23-3
Unidirectional Channels: 1
Voltage - Breakdown (Min): 18.8V
Voltage - Clamping (Max) @ Ipp: 30.5V (Typ)
Power - Peak Pulse: 200W
Power Line Protection: No
на замовлення 3000 шт:
термін постачання 21-31 дні (днів)
Кількість Ціна
3000+2.47 грн
Мінімальне замовлення: 3000
В кошику  од. на суму  грн.
MKZ20V,LM docget.jsp?did=155143&prodName=MKZ20V
MKZ20V,LM
Виробник: Toshiba Semiconductor and Storage
Description: TVS DIODE 17.6VWM 30.5V SOT233
Packaging: Cut Tape (CT)
Package / Case: TO-236-3, SC-59, SOT-23-3
Mounting Type: Surface Mount
Type: Zener
Operating Temperature: 150°C (TJ)
Applications: General Purpose
Capacitance @ Frequency: 29pF @ 1MHz
Current - Peak Pulse (10/1000µs): 5A (8/20µs)
Voltage - Reverse Standoff (Typ): 17.6V (Max)
Supplier Device Package: SOT-23-3
Unidirectional Channels: 1
Voltage - Breakdown (Min): 18.8V
Voltage - Clamping (Max) @ Ipp: 30.5V (Typ)
Power - Peak Pulse: 200W
Power Line Protection: No
на замовлення 5990 шт:
термін постачання 21-31 дні (днів)
Кількість Ціна
25+12.70 грн
42+7.34 грн
100+4.53 грн
500+3.09 грн
1000+2.72 грн
Мінімальне замовлення: 25
В кошику  од. на суму  грн.
RN1304,LF docget.jsp?did=18776&prodName=RN1304
RN1304,LF
Виробник: Toshiba Semiconductor and Storage
Description: TRANS PREBIAS NPN 50V 0.1A SC70
Packaging: Tape & Reel (TR)
Package / Case: SC-70, SOT-323
Mounting Type: Surface Mount
Transistor Type: NPN - Pre-Biased
Vce Saturation (Max) @ Ib, Ic: 300mV @ 250µA, 5mA
Current - Collector Cutoff (Max): 500nA
DC Current Gain (hFE) (Min) @ Ic, Vce: 80 @ 10mA, 5V
Supplier Device Package: SC-70
Current - Collector (Ic) (Max): 100 mA
Voltage - Collector Emitter Breakdown (Max): 50 V
Power - Max: 100 mW
Frequency - Transition: 250 MHz
Resistor - Base (R1): 47 kOhms
Resistor - Emitter Base (R2): 47 kOhms
Resistors Included: R1 and R2
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RN1304,LF docget.jsp?did=18776&prodName=RN1304
RN1304,LF
Виробник: Toshiba Semiconductor and Storage
Description: TRANS PREBIAS NPN 50V 0.1A SC70
Packaging: Cut Tape (CT)
Package / Case: SC-70, SOT-323
Mounting Type: Surface Mount
Transistor Type: NPN - Pre-Biased
Vce Saturation (Max) @ Ib, Ic: 300mV @ 250µA, 5mA
Current - Collector Cutoff (Max): 500nA
DC Current Gain (hFE) (Min) @ Ic, Vce: 80 @ 10mA, 5V
Supplier Device Package: SC-70
Current - Collector (Ic) (Max): 100 mA
Voltage - Collector Emitter Breakdown (Max): 50 V
Power - Max: 100 mW
Frequency - Transition: 250 MHz
Resistor - Base (R1): 47 kOhms
Resistor - Emitter Base (R2): 47 kOhms
Resistors Included: R1 and R2
на замовлення 2540 шт:
термін постачання 21-31 дні (днів)
Кількість Ціна
23+14.29 грн
38+8.10 грн
100+4.99 грн
500+3.42 грн
1000+3.00 грн
Мінімальне замовлення: 23
В кошику  од. на суму  грн.
TLP620M(Y-TP1,E
TLP620M(Y-TP1,E
Виробник: Toshiba Semiconductor and Storage
Description: OPTOISOLATOR 5KV 1CH TRANS 4-SMD
Packaging: Tape & Reel (TR)
Package / Case: 4-SMD (0.300", 7.62mm)
Output Type: Transistor
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 125°C
Voltage - Forward (Vf) (Typ): 1.25V
Input Type: AC, DC
Current - Output / Channel: 50mA
Voltage - Isolation: 5000Vrms
Current Transfer Ratio (Min): 50% @ 5mA
Vce Saturation (Max): 300mV
Current Transfer Ratio (Max): 600% @ 5mA
Supplier Device Package: 4-SMD
Voltage - Output (Max): 80V
Turn On / Turn Off Time (Typ): 3µs, 3µs
Rise / Fall Time (Typ): 2µs, 3µs
Number of Channels: 1
Current - DC Forward (If) (Max): 50 mA
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TLP620M(TP5,E
TLP620M(TP5,E
Виробник: Toshiba Semiconductor and Storage
Description: OPTOISOLATOR 5KV 1CH TRANS 4-SMD
Packaging: Tape & Reel (TR)
Package / Case: 4-SMD, Gull Wing
Output Type: Transistor
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 125°C
Voltage - Forward (Vf) (Typ): 1.25V
Input Type: AC, DC
Current - Output / Channel: 50mA
Voltage - Isolation: 5000Vrms
Current Transfer Ratio (Min): 50% @ 5mA
Vce Saturation (Max): 300mV
Current Transfer Ratio (Max): 600% @ 5mA
Supplier Device Package: 4-SMD
Voltage - Output (Max): 80V
Turn On / Turn Off Time (Typ): 3µs, 3µs
Rise / Fall Time (Typ): 2µs, 3µs
Number of Channels: 1
Current - DC Forward (If) (Max): 50 mA
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TLP620M(Y-TP5,E
TLP620M(Y-TP5,E
Виробник: Toshiba Semiconductor and Storage
Description: OPTOISOLATOR 5KV 1CH TRANS 4-SMD
Packaging: Tape & Reel (TR)
Package / Case: 4-SMD, Gull Wing
Output Type: Transistor
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 125°C
Voltage - Forward (Vf) (Typ): 1.25V
Input Type: AC, DC
Current - Output / Channel: 50mA
Voltage - Isolation: 5000Vrms
Current Transfer Ratio (Min): 50% @ 5mA
Vce Saturation (Max): 300mV
Current Transfer Ratio (Max): 600% @ 5mA
Supplier Device Package: 4-SMD
Voltage - Output (Max): 80V
Turn On / Turn Off Time (Typ): 3µs, 3µs
Rise / Fall Time (Typ): 2µs, 3µs
Number of Channels: 1
Current - DC Forward (If) (Max): 50 mA
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TLP620M(GR-TP5,E
TLP620M(GR-TP5,E
Виробник: Toshiba Semiconductor and Storage
Description: OPTOISOLATOR 5KV 1CH TRANS 4-SMD
Packaging: Tape & Reel (TR)
Package / Case: 4-SMD, Gull Wing
Output Type: Transistor
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 125°C
Voltage - Forward (Vf) (Typ): 1.25V
Input Type: AC, DC
Current - Output / Channel: 50mA
Voltage - Isolation: 5000Vrms
Current Transfer Ratio (Min): 50% @ 5mA
Vce Saturation (Max): 300mV
Current Transfer Ratio (Max): 600% @ 5mA
Supplier Device Package: 4-SMD
Voltage - Output (Max): 80V
Turn On / Turn Off Time (Typ): 3µs, 3µs
Rise / Fall Time (Typ): 2µs, 3µs
Number of Channels: 1
Current - DC Forward (If) (Max): 50 mA
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TMPM380FWFG
TMPM380FWFG
Виробник: Toshiba Semiconductor and Storage
Description: IC MCU 32BIT 128KB FLASH 100LQFP
Packaging: Tray
Package / Case: 100-LQFP
Mounting Type: Surface Mount
Speed: 40MHz
Program Memory Size: 128KB (128K x 8)
RAM Size: 12K x 8
Operating Temperature: -40°C ~ 85°C (TA)
Oscillator Type: External
Program Memory Type: FLASH
Core Processor: ARM® Cortex®-M3
Data Converters: A/D 18x12b
Core Size: 32-Bit Single-Core
Voltage - Supply (Vcc/Vdd): 4V ~ 5.5V
Connectivity: I2C, SIO, UART/USART
Peripherals: DMA, LVD, WDT
Supplier Device Package: 100-LQFP (14x14)
Number of I/O: 83
DigiKey Programmable: Not Verified
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TPCC8093,L1Q
TPCC8093,L1Q
Виробник: Toshiba Semiconductor and Storage
Description: MOSFET N-CH 20V 21A 8TSON
Packaging: Tape & Reel (TR)
Package / Case: 8-PowerVDFN
Mounting Type: Surface Mount
Operating Temperature: 150°C
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 21A (Ta)
Rds On (Max) @ Id, Vgs: 5.8mOhm @ 10.5A, 4.5V
Power Dissipation (Max): 1.9W (Ta), 30W (Tc)
Vgs(th) (Max) @ Id: 1.2V @ 500µA
Supplier Device Package: 8-TSON Advance (3.1x3.1)
Drive Voltage (Max Rds On, Min Rds On): 2.5V, 4.5V
Vgs (Max): ±12V
Drain to Source Voltage (Vdss): 20 V
Gate Charge (Qg) (Max) @ Vgs: 16 nC @ 5 V
Input Capacitance (Ciss) (Max) @ Vds: 1860 pF @ 10 V
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TC7WPB9306FK,LF docget.jsp?did=12388&prodName=TC7WPB9306FK
TC7WPB9306FK,LF
Виробник: Toshiba Semiconductor and Storage
Description: IC BUS SWITCH 2 X 1:1 8-SSOP
Packaging: Cut Tape (CT)
Package / Case: 8-VFSOP (0.091", 2.30mm Width)
Mounting Type: Surface Mount
Circuit: 2 x 1:1
Type: Bus Switch
Operating Temperature: -40°C ~ 85°C
Voltage - Supply: 1.65V ~ 5V, 2.3V ~ 5.5V
Independent Circuits: 1
Voltage Supply Source: Dual Supply
Supplier Device Package: 8-SSOP
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7UL1G34NX,ELF docget.jsp?did=156995&prodName=7UL1G34NX
7UL1G34NX,ELF
Виробник: Toshiba Semiconductor and Storage
Description: 1 GATE LOGIC, BUFFER, XSON6, NON
Packaging: Tape & Reel (TR)
Package / Case: 6-XFDFN
Mounting Type: Surface Mount
Number of Elements: 1
Logic Type: Buffer, Non-Inverting
Operating Temperature: -40°C ~ 85°C (TA)
Voltage - Supply: 0.9V ~ 3.6V
Number of Bits per Element: 1
Current - Output High, Low: 8mA, 8mA
Supplier Device Package: 6-MP6D (1.45x1)
на замовлення 5000 шт:
термін постачання 21-31 дні (днів)
Кількість Ціна
5000+5.98 грн
Мінімальне замовлення: 5000
В кошику  од. на суму  грн.
7UL1G34NX,ELF docget.jsp?did=156995&prodName=7UL1G34NX
7UL1G34NX,ELF
Виробник: Toshiba Semiconductor and Storage
Description: 1 GATE LOGIC, BUFFER, XSON6, NON
Packaging: Cut Tape (CT)
Package / Case: 6-XFDFN
Mounting Type: Surface Mount
Number of Elements: 1
Logic Type: Buffer, Non-Inverting
Operating Temperature: -40°C ~ 85°C (TA)
Voltage - Supply: 0.9V ~ 3.6V
Number of Bits per Element: 1
Current - Output High, Low: 8mA, 8mA
Supplier Device Package: 6-MP6D (1.45x1)
на замовлення 5000 шт:
термін постачання 21-31 дні (днів)
Кількість Ціна
20+15.88 грн
30+10.32 грн
34+9.11 грн
100+7.32 грн
250+6.72 грн
500+6.36 грн
1000+5.97 грн
2500+5.79 грн
Мінімальне замовлення: 20
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TMPM4NRF10XBG
Виробник: Toshiba Semiconductor and Storage
Description: MCU, DATA PROCESSING, ARM CORTEX
Packaging: Tray
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2SD2695,T6F(J 2SD2695_2009-12-21.pdf
2SD2695,T6F(J
Виробник: Toshiba Semiconductor and Storage
Description: TRANS NPN 60V 2A TO-92MOD
Packaging: Bulk
Package / Case: TO-226-3, TO-92-3 Long Body
Mounting Type: Through Hole
Transistor Type: NPN
Operating Temperature: 150°C (TJ)
Vce Saturation (Max) @ Ib, Ic: 1.5V @ 1mA, 1A
Current - Collector Cutoff (Max): 10µA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce: 2000 @ 1A, 2V
Frequency - Transition: 100MHz
Supplier Device Package: TO-92MOD
Current - Collector (Ic) (Max): 2 A
Voltage - Collector Emitter Breakdown (Max): 60 V
Power - Max: 900 mW
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TMPM4GNF10FG TMPM3HMFDAFG_datasheet_en_20250221.pdf
TMPM4GNF10FG
Виробник: Toshiba Semiconductor and Storage
Description: IC MCU 32BIT 1MB FLASH 100LQFP
Packaging: Tray
Package / Case: 100-LQFP
Mounting Type: Surface Mount
Speed: 200MHz
Program Memory Size: 1MB (1M x 8)
RAM Size: 256K x 8
Operating Temperature: -40°C ~ 85°C
Oscillator Type: External, Internal
Program Memory Type: FLASH
EEPROM Size: 32K x 8
Core Processor: ARM® Cortex®-M4F
Data Converters: A/D 24x12b SAR; D/A 2x8b
Core Size: 32-Bit
Voltage - Supply (Vcc/Vdd): 2.7V ~ 3.6V
Connectivity: EBI/EMI, FIFO, I2C, IrDA, SIO, SPI, UART/USART
Peripherals: DMA, I2S, LVD, POR, PWM, WDT
Supplier Device Package: 100-LQFP (14x14)
Number of I/O: 91
DigiKey Programmable: Not Verified
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DCM340D01(AS,EL) standard-digital-isolators.html
DCM340D01(AS,EL)
Виробник: Toshiba Semiconductor and Storage
Description: 4-CH (4:0) AECQ HIGH SPEED DIGIT
Packaging: Tape & Reel (TR)
Package / Case: 16-SOIC (0.295", 7.50mm Width)
Mounting Type: Surface Mount
Type: SPI
Operating Temperature: -40°C ~ 125°C
Voltage - Supply: 3V ~ 5.5V
Data Rate: 50Mbps
Technology: Magnetic Coupling
Voltage - Isolation: 5000Vrms
Inputs - Side 1/Side 2: 4/0
Supplier Device Package: 16-SOIC
Rise / Fall Time (Typ): 0.9ns, 0.9ns
Common Mode Transient Immunity (Min): 100kV/µs (Typ)
Propagation Delay tpLH / tpHL (Max): 18.4ns, 18.4ns
Isolated Power: No
Channel Type: Unidirectional
Pulse Width Distortion (Max): 5.1ns
Grade: Automotive
Number of Channels: 4
Qualification: AEC-Q100
на замовлення 1500 шт:
термін постачання 21-31 дні (днів)
Кількість Ціна
1500+126.29 грн
Мінімальне замовлення: 1500
В кошику  од. на суму  грн.
DCM340D01(AS,EL) standard-digital-isolators.html
DCM340D01(AS,EL)
Виробник: Toshiba Semiconductor and Storage
Description: 4-CH (4:0) AECQ HIGH SPEED DIGIT
Packaging: Cut Tape (CT)
Package / Case: 16-SOIC (0.295", 7.50mm Width)
Mounting Type: Surface Mount
Type: SPI
Operating Temperature: -40°C ~ 125°C
Voltage - Supply: 3V ~ 5.5V
Data Rate: 50Mbps
Technology: Magnetic Coupling
Voltage - Isolation: 5000Vrms
Inputs - Side 1/Side 2: 4/0
Supplier Device Package: 16-SOIC
Rise / Fall Time (Typ): 0.9ns, 0.9ns
Common Mode Transient Immunity (Min): 100kV/µs (Typ)
Propagation Delay tpLH / tpHL (Max): 18.4ns, 18.4ns
Isolated Power: No
Channel Type: Unidirectional
Pulse Width Distortion (Max): 5.1ns
Grade: Automotive
Number of Channels: 4
Qualification: AEC-Q100
на замовлення 1500 шт:
термін постачання 21-31 дні (днів)
Кількість Ціна
2+232.61 грн
10+167.96 грн
25+154.06 грн
100+130.20 грн
250+123.35 грн
500+119.23 грн
Мінімальне замовлення: 2
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TCB001HQ
TCB001HQ
Виробник: Toshiba Semiconductor and Storage
Description: AUDIO POWER AMPLIFIER, CLASS-AB,
Packaging: Tube
Package / Case: 25-SIP Formed Leads
Mounting Type: Through Hole
Supplier Device Package: 25-HZIP
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TB62D786FTG,EL
TB62D786FTG,EL
Виробник: Toshiba Semiconductor and Storage
Description: IC LED DRVR LIN PWM 40MA 24VQFN
Packaging: Tape & Reel (TR)
Package / Case: 24-VFQFN Exposed Pad
Voltage - Output: 28V
Mounting Type: Surface Mount
Number of Outputs: 9
Type: Linear
Operating Temperature: -40°C ~ 85°C (TA)
Current - Output / Channel: 40mA
Internal Switch(s): Yes
Supplier Device Package: 24-VQFN (4x4)
Dimming: PWM
Voltage - Supply (Min): 7V
Voltage - Supply (Max): 28V
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TB62D786FTG,EL
TB62D786FTG,EL
Виробник: Toshiba Semiconductor and Storage
Description: IC LED DRVR LIN PWM 40MA 24VQFN
Packaging: Cut Tape (CT)
Package / Case: 24-VFQFN Exposed Pad
Voltage - Output: 28V
Mounting Type: Surface Mount
Number of Outputs: 9
Type: Linear
Operating Temperature: -40°C ~ 85°C (TA)
Current - Output / Channel: 40mA
Internal Switch(s): Yes
Supplier Device Package: 24-VQFN (4x4)
Dimming: PWM
Voltage - Supply (Min): 7V
Voltage - Supply (Max): 28V
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TRS10H120H,S1Q docget.jsp?did=158257&prodName=TRS10H120H
TRS10H120H,S1Q
Виробник: Toshiba Semiconductor and Storage
Description: DIODE SIL CARB 1200V 38A TO2472L
Packaging: Tube
Package / Case: TO-247-2
Mounting Type: Through Hole
Speed: No Recovery Time > 500mA (Io)
Reverse Recovery Time (trr): 0 ns
Technology: SiC (Silicon Carbide) Schottky
Capacitance @ Vr, F: 1148pF @ 1V, 1MHz
Current - Average Rectified (Io): 38A
Supplier Device Package: TO-247-2L
Operating Temperature - Junction: 175°C
Voltage - DC Reverse (Vr) (Max): 1200 V
Voltage - Forward (Vf) (Max) @ If: 1.45 V @ 10 A
Current - Reverse Leakage @ Vr: 80 µA @ 1200 V
на замовлення 40 шт:
термін постачання 21-31 дні (днів)
Кількість Ціна
1+620.82 грн
30+423.99 грн
В кошику  од. на суму  грн.
TRS15H120H,S1Q docget.jsp?did=158267&prodName=TRS15H120H
TRS15H120H,S1Q
Виробник: Toshiba Semiconductor and Storage
Description: DIODE SIL CARB 1200V 50A TO2472L
Packaging: Tube
Package / Case: TO-247-2
Mounting Type: Through Hole
Speed: No Recovery Time > 500mA (Io)
Reverse Recovery Time (trr): 0 ns
Technology: SiC (Silicon Carbide) Schottky
Capacitance @ Vr, F: 1673pF @ 1V, 1MHz
Current - Average Rectified (Io): 50A
Supplier Device Package: TO-247-2L
Operating Temperature - Junction: 175°C
Voltage - DC Reverse (Vr) (Max): 1200 V
Voltage - Forward (Vf) (Max) @ If: 1.45 V @ 15 A
Current - Reverse Leakage @ Vr: 100 µA @ 1200 V
на замовлення 60 шт:
термін постачання 21-31 дні (днів)
Кількість Ціна
1+823.27 грн
30+522.32 грн
В кошику  од. на суму  грн.
TRS40H120H,S1Q TRS40H120H_datasheet_en_20240903.pdf?did=158289&prodName=TRS40H120H
TRS40H120H,S1Q
Виробник: Toshiba Semiconductor and Storage
Description: 1200 V/40 A SIC SCHOTTKY BARRIER
Packaging: Tube
Package / Case: TO-247-2
Mounting Type: Through Hole
Speed: No Recovery Time > 500mA (Io)
Reverse Recovery Time (trr): 0 ns
Technology: SiC (Silicon Carbide) Schottky
Capacitance @ Vr, F: 4368pF @ 1V, 1MHz
Current - Average Rectified (Io): 102A
Supplier Device Package: TO-247-2L
Operating Temperature - Junction: 175°C
Voltage - DC Reverse (Vr) (Max): 1200 V
Voltage - Forward (Vf) (Max) @ If: 1.45 V @ 40 A
Current - Reverse Leakage @ Vr: 230 µA @ 1.2 kV
на замовлення 60 шт:
термін постачання 21-31 дні (днів)
Кількість Ціна
1+1297.22 грн
30+781.87 грн
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TLP532(BLL,F)
Виробник: Toshiba Semiconductor and Storage
Description: PHOTOCOUPLER
Packaging: Tube
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TLP373(F)
Виробник: Toshiba Semiconductor and Storage
Description: PHOTOCOUPLER
Packaging: Tube
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74HC4538D 74HC4538D_datasheet_en_20170124.pdf?did=37371&prodName=74HC4538D
74HC4538D
Виробник: Toshiba Semiconductor and Storage
Description: IC MMV 2-CIR 25-NS 16-SOIC
Packaging: Cut Tape (CT)
Package / Case: 16-SOIC (0.154", 3.90mm Width)
Mounting Type: Surface Mount
Logic Type: Monostable
Operating Temperature: -40°C ~ 125°C (TA)
Propagation Delay: 25 ns
Independent Circuits: 2
Current - Output High, Low: 5.2mA, 5.2mA
Schmitt Trigger Input: Yes
Supplier Device Package: 16-SOIC
Voltage - Supply: 2 V ~ 6 V
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74LV4T125FT
Виробник: Toshiba Semiconductor and Storage
Description: TSSOP14 UNIDIRECTIONAL LEVEL SHI
Packaging: Tape & Reel (TR)
Package / Case: 14-TSSOP (0.173", 4.40mm Width)
Output Type: 3-State
Mounting Type: Surface Mount
Number of Elements: 4
Logic Type: Buffer, Non-Inverting
Operating Temperature: -40°C ~ 125°C (TA)
Voltage - Supply: 1.65V ~ 5.5V
Number of Bits per Element: 1
Current - Output High, Low: 16mA, 16mA
Supplier Device Package: 14-TSSOP
Grade: Automotive
Qualification: AEC-Q100
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TLX9150M(TPL,F TLX9150M_datasheet_en_20240920.pdf?did=159447&prodName=TLX9150M
TLX9150M(TPL,F
Виробник: Toshiba Semiconductor and Storage
Description: PHOTORELAY 900V AEC-Q101
Packaging: Tape & Reel (TR)
Package / Case: 12-SOIC (0.295", 7.50mm Width), 8 Leads
Output Type: AC
Mounting Type: Surface Mount
Voltage - Input: 1.65VDC
Circuit: SPST-NO (1 Form A)
Operating Temperature: -40°C ~ 125°C
Load Current: 50 mA
Supplier Device Package: 12-SO
Grade: Automotive
Voltage - Load: 0 V ~ 900 V
On-State Resistance (Max): 250 Ohms
Qualification: AEC-Q101
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TLX9150M(TPL,F TLX9150M_datasheet_en_20240920.pdf?did=159447&prodName=TLX9150M
TLX9150M(TPL,F
Виробник: Toshiba Semiconductor and Storage
Description: PHOTORELAY 900V AEC-Q101
Packaging: Cut Tape (CT)
Package / Case: 12-SOIC (0.295", 7.50mm Width), 8 Leads
Output Type: AC
Mounting Type: Surface Mount
Voltage - Input: 1.65VDC
Circuit: SPST-NO (1 Form A)
Operating Temperature: -40°C ~ 125°C
Load Current: 50 mA
Supplier Device Package: 12-SO
Grade: Automotive
Voltage - Load: 0 V ~ 900 V
On-State Resistance (Max): 250 Ohms
Qualification: AEC-Q101
на замовлення 1375 шт:
термін постачання 21-31 дні (днів)
Кількість Ціна
1+394.56 грн
10+284.16 грн
100+227.88 грн
500+193.02 грн
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