Продукція > TOSHIBA SEMICONDUCTOR AND STORAGE > Всі товари виробника TOSHIBA SEMICONDUCTOR AND STORAGE (13538) > Сторінка 224 з 226
| Фото | Назва | Виробник | Інформація |
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74HC4538D | Toshiba Semiconductor and Storage |
Description: IC MMV 2-CIR 25-NS 16-SOICPackaging: Cut Tape (CT) Package / Case: 16-SOIC (0.154", 3.90mm Width) Mounting Type: Surface Mount Logic Type: Monostable Operating Temperature: -40°C ~ 125°C (TA) Propagation Delay: 25 ns Independent Circuits: 2 Current - Output High, Low: 5.2mA, 5.2mA Schmitt Trigger Input: Yes Supplier Device Package: 16-SOIC Voltage - Supply: 2 V ~ 6 V |
на замовлення 1640 шт: термін постачання 21-31 дні (днів) |
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| MN06ACA10T | Toshiba Semiconductor and Storage |
Description: HDD 10TB 3.5" SATA III 5V/12VPackaging: Bulk Size / Dimension: 147.00mm x 101.85mm x 26.10mm Memory Size: 10TB Memory Type: Magnetic Disk (HDD) Type: SATA III Operating Temperature: 0°C ~ 60°C Voltage - Supply: 5V, 12V Form Factor: 3.5" |
товару немає в наявності |
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| MN06ACA600 | Toshiba Semiconductor and Storage |
Description: HDD 6TB 3.5" SATA III 5V/12VPackaging: Bulk Size / Dimension: 147.00mm x 101.85mm x 26.10mm Memory Size: 6TB Memory Type: Magnetic Disk (HDD) Type: SATA III Operating Temperature: 0°C ~ 60°C Voltage - Supply: 5V, 12V Form Factor: 3.5" |
товару немає в наявності |
В кошику од. на суму грн. | |||||||||||||||||||
| MN06ACA800 | Toshiba Semiconductor and Storage |
Description: HDD 8TB 3.5" SATA III 5V/12VPackaging: Bulk Size / Dimension: 147.00mm x 101.85mm x 26.10mm Memory Size: 8TB Memory Type: Magnetic Disk (HDD) Type: SATA III Operating Temperature: 0°C ~ 60°C Voltage - Supply: 5V, 12V Form Factor: 3.5" |
товару немає в наявності |
В кошику од. на суму грн. | |||||||||||||||||||
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TLP387(TPR,E | Toshiba Semiconductor and Storage |
Description: OPTOISOLATOR 5KV 1CH DARL 6-SOPackaging: Tape & Reel (TR) Package / Case: 6-SOIC (0.295", 7.50mm Width), 4 Leads Output Type: Darlington Mounting Type: Surface Mount Operating Temperature: -55°C ~ 110°C Voltage - Forward (Vf) (Typ): 1.25V Input Type: DC Current - Output / Channel: 150mA Voltage - Isolation: 5000Vrms Current Transfer Ratio (Min): 1000% @ 1mA Vce Saturation (Max): 1V Supplier Device Package: 6-SO, 4 Lead Voltage - Output (Max): 300V Turn On / Turn Off Time (Typ): 50µs, 15µs Rise / Fall Time (Typ): 40µs, 15µs Number of Channels: 1 Current - DC Forward (If) (Max): 50 mA |
на замовлення 6000 шт: термін постачання 21-31 дні (днів) |
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TLP387(TPR,E | Toshiba Semiconductor and Storage |
Description: OPTOISOLATOR 5KV 1CH DARL 6-SOPackaging: Cut Tape (CT) Package / Case: 6-SOIC (0.295", 7.50mm Width), 4 Leads Output Type: Darlington Mounting Type: Surface Mount Operating Temperature: -55°C ~ 110°C Voltage - Forward (Vf) (Typ): 1.25V Input Type: DC Current - Output / Channel: 150mA Voltage - Isolation: 5000Vrms Current Transfer Ratio (Min): 1000% @ 1mA Vce Saturation (Max): 1V Supplier Device Package: 6-SO, 4 Lead Voltage - Output (Max): 300V Turn On / Turn Off Time (Typ): 50µs, 15µs Rise / Fall Time (Typ): 40µs, 15µs Number of Channels: 1 Current - DC Forward (If) (Max): 50 mA |
на замовлення 8436 шт: термін постачання 21-31 дні (днів) |
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TLP387(D4-TPR,E | Toshiba Semiconductor and Storage |
Description: OPTOISOLATOR 5KV 1CH DARL 6-SOPackaging: Tape & Reel (TR) Package / Case: 6-SOIC (0.295", 7.50mm Width), 4 Leads Output Type: Darlington Mounting Type: Surface Mount Operating Temperature: -55°C ~ 110°C Voltage - Forward (Vf) (Typ): 1.25V Input Type: DC Current - Output / Channel: 150mA Voltage - Isolation: 5000Vrms Current Transfer Ratio (Min): 1000% @ 1mA Vce Saturation (Max): 1V Supplier Device Package: 6-SO, 4 Lead Voltage - Output (Max): 300V Turn On / Turn Off Time (Typ): 50µs, 15µs Rise / Fall Time (Typ): 40µs, 15µs Number of Channels: 1 Current - DC Forward (If) (Max): 50 mA |
на замовлення 3000 шт: термін постачання 21-31 дні (днів) |
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TLP387(D4-TPR,E | Toshiba Semiconductor and Storage |
Description: OPTOISOLATOR 5KV 1CH DARL 6-SOPackaging: Cut Tape (CT) Package / Case: 6-SOIC (0.295", 7.50mm Width), 4 Leads Output Type: Darlington Mounting Type: Surface Mount Operating Temperature: -55°C ~ 110°C Voltage - Forward (Vf) (Typ): 1.25V Input Type: DC Current - Output / Channel: 150mA Voltage - Isolation: 5000Vrms Current Transfer Ratio (Min): 1000% @ 1mA Vce Saturation (Max): 1V Supplier Device Package: 6-SO, 4 Lead Voltage - Output (Max): 300V Turn On / Turn Off Time (Typ): 50µs, 15µs Rise / Fall Time (Typ): 40µs, 15µs Number of Channels: 1 Current - DC Forward (If) (Max): 50 mA |
на замовлення 4373 шт: термін постачання 21-31 дні (днів) |
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TLP387(D4,E | Toshiba Semiconductor and Storage |
Description: OPTOISOLATOR 5KV 1CH DARL 6-SOPackaging: Tube Package / Case: 6-SOIC (0.295", 7.50mm Width), 4 Leads Output Type: Darlington Mounting Type: Surface Mount Operating Temperature: -55°C ~ 110°C Voltage - Forward (Vf) (Typ): 1.25V Input Type: DC Current - Output / Channel: 150mA Voltage - Isolation: 5000Vrms Current Transfer Ratio (Min): 1000% @ 1mA Vce Saturation (Max): 1.2V Supplier Device Package: 6-SO, 4 Lead Voltage - Output (Max): 300V Turn On / Turn Off Time (Typ): 50µs, 15µs Rise / Fall Time (Typ): 40µs, 15µs Number of Channels: 1 Current - DC Forward (If) (Max): 50 mA |
на замовлення 195 шт: термін постачання 21-31 дні (днів) |
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TK115U65Z5,RQ | Toshiba Semiconductor and Storage |
Description: N-CH MOSFET, 650 V, 0.115 @10V,Packaging: Tape & Reel (TR) Package / Case: 8-PowerSFN Mounting Type: Surface Mount Operating Temperature: 150°C Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 24A (Ta) Rds On (Max) @ Id, Vgs: 115mOhm @ 12A, 10V Power Dissipation (Max): 190W (Tc) Vgs(th) (Max) @ Id: 4.5V @ 1.02mA Supplier Device Package: TOLL Drive Voltage (Max Rds On, Min Rds On): 10V Vgs (Max): ±30V Drain to Source Voltage (Vdss): 650 V Gate Charge (Qg) (Max) @ Vgs: 42 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 2280 pF @ 300 V |
на замовлення 4000 шт: термін постачання 21-31 дні (днів) |
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TK115U65Z5,RQ | Toshiba Semiconductor and Storage |
Description: N-CH MOSFET, 650 V, 0.115 @10V,Packaging: Cut Tape (CT) Package / Case: 8-PowerSFN Mounting Type: Surface Mount Operating Temperature: 150°C Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 24A (Ta) Rds On (Max) @ Id, Vgs: 115mOhm @ 12A, 10V Power Dissipation (Max): 190W (Tc) Vgs(th) (Max) @ Id: 4.5V @ 1.02mA Supplier Device Package: TOLL Drive Voltage (Max Rds On, Min Rds On): 10V Vgs (Max): ±30V Drain to Source Voltage (Vdss): 650 V Gate Charge (Qg) (Max) @ Vgs: 42 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 2280 pF @ 300 V |
на замовлення 4000 шт: термін постачання 21-31 дні (днів) |
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TK099N60Z1,S1F | Toshiba Semiconductor and Storage |
Description: N-CH MOSFET, 600 V, 0.099 @10V,Packaging: Tube Package / Case: TO-247-3 Mounting Type: Through Hole Operating Temperature: 150°C Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 25A (Ta) Rds On (Max) @ Id, Vgs: 99mOhm @ 8.1A, 10V Power Dissipation (Max): 176W (Tc) Vgs(th) (Max) @ Id: 4V @ 930µA Supplier Device Package: TO-247 Drive Voltage (Max Rds On, Min Rds On): 10V Vgs (Max): ±30V Drain to Source Voltage (Vdss): 600 V Gate Charge (Qg) (Max) @ Vgs: 36 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 2050 pF @ 300 V |
на замовлення 60 шт: термін постачання 21-31 дні (днів) |
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TK155U60Z1,RQ | Toshiba Semiconductor and Storage |
Description: N-CH MOSFET, 600 V, 0.155 @10V,Packaging: Tape & Reel (TR) Package / Case: 8-PowerSFN Mounting Type: Surface Mount Operating Temperature: 150°C Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 17A (Ta) Rds On (Max) @ Id, Vgs: 155mOhm @ 5.4A, 10V Power Dissipation (Max): 130W (Tc) Vgs(th) (Max) @ Id: 4V @ 610µA Supplier Device Package: TOLL Drive Voltage (Max Rds On, Min Rds On): 10V Vgs (Max): ±30V Drain to Source Voltage (Vdss): 600 V Gate Charge (Qg) (Max) @ Vgs: 24 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 1350 pF @ 300 V |
на замовлення 2000 шт: термін постачання 21-31 дні (днів) |
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TK155U60Z1,RQ | Toshiba Semiconductor and Storage |
Description: N-CH MOSFET, 600 V, 0.155 @10V,Packaging: Cut Tape (CT) Package / Case: 8-PowerSFN Mounting Type: Surface Mount Operating Temperature: 150°C Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 17A (Ta) Rds On (Max) @ Id, Vgs: 155mOhm @ 5.4A, 10V Power Dissipation (Max): 130W (Tc) Vgs(th) (Max) @ Id: 4V @ 610µA Supplier Device Package: TOLL Drive Voltage (Max Rds On, Min Rds On): 10V Vgs (Max): ±30V Drain to Source Voltage (Vdss): 600 V Gate Charge (Qg) (Max) @ Vgs: 24 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 1350 pF @ 300 V |
на замовлення 3995 шт: термін постачання 21-31 дні (днів) |
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TK125U60Z1,RQ | Toshiba Semiconductor and Storage |
Description: N-CH MOSFET, 600 V, 0.125 @10V,Packaging: Tape & Reel (TR) Package / Case: 8-PowerSFN Mounting Type: Surface Mount Operating Temperature: 150°C Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 20A (Ta) Rds On (Max) @ Id, Vgs: 125mOhm @ 6A, 10V Power Dissipation (Max): 150W (Tc) Vgs(th) (Max) @ Id: 4V @ 730µA Supplier Device Package: TOLL Drive Voltage (Max Rds On, Min Rds On): 10V Vgs (Max): ±30V Drain to Source Voltage (Vdss): 600 V Gate Charge (Qg) (Max) @ Vgs: 28 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 1620 pF @ 300 V |
на замовлення 4000 шт: термін постачання 21-31 дні (днів) |
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TK125U60Z1,RQ | Toshiba Semiconductor and Storage |
Description: N-CH MOSFET, 600 V, 0.125 @10V,Packaging: Cut Tape (CT) Package / Case: 8-PowerSFN Mounting Type: Surface Mount Operating Temperature: 150°C Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 20A (Ta) Rds On (Max) @ Id, Vgs: 125mOhm @ 6A, 10V Power Dissipation (Max): 150W (Tc) Vgs(th) (Max) @ Id: 4V @ 730µA Supplier Device Package: TOLL Drive Voltage (Max Rds On, Min Rds On): 10V Vgs (Max): ±30V Drain to Source Voltage (Vdss): 600 V Gate Charge (Qg) (Max) @ Vgs: 28 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 1620 pF @ 300 V |
на замовлення 4000 шт: термін постачання 21-31 дні (днів) |
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TK099U60Z1,RQ | Toshiba Semiconductor and Storage |
Description: N-CH MOSFET, 600 V, 0.099 @10V,Packaging: Tape & Reel (TR) Package / Case: 8-PowerSFN Mounting Type: Surface Mount Operating Temperature: 150°C Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 25A (Ta) Rds On (Max) @ Id, Vgs: 99mOhm @ 8.1A, 10V Power Dissipation (Max): 176W (Tc) Vgs(th) (Max) @ Id: 4V @ 930µA Supplier Device Package: TOLL Drive Voltage (Max Rds On, Min Rds On): 10V Vgs (Max): ±30V Drain to Source Voltage (Vdss): 600 V Gate Charge (Qg) (Max) @ Vgs: 36 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 2050 pF @ 300 V |
на замовлення 4000 шт: термін постачання 21-31 дні (днів) |
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TK099U60Z1,RQ | Toshiba Semiconductor and Storage |
Description: N-CH MOSFET, 600 V, 0.099 @10V,Packaging: Cut Tape (CT) Package / Case: 8-PowerSFN Mounting Type: Surface Mount Operating Temperature: 150°C Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 25A (Ta) Rds On (Max) @ Id, Vgs: 99mOhm @ 8.1A, 10V Power Dissipation (Max): 176W (Tc) Vgs(th) (Max) @ Id: 4V @ 930µA Supplier Device Package: TOLL Drive Voltage (Max Rds On, Min Rds On): 10V Vgs (Max): ±30V Drain to Source Voltage (Vdss): 600 V Gate Charge (Qg) (Max) @ Vgs: 36 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 2050 pF @ 300 V |
на замовлення 4000 шт: термін постачання 21-31 дні (днів) |
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TK080U60Z1,RQ | Toshiba Semiconductor and Storage |
Description: N-CH MOSFET, 600 V, 0.08 @10V, TPackaging: Tape & Reel (TR) Package / Case: 8-PowerSFN Mounting Type: Surface Mount Operating Temperature: 150°C Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 30A (Ta) Rds On (Max) @ Id, Vgs: 80mOhm @ 10.3A, 10V Power Dissipation (Max): 211W (Tc) Vgs(th) (Max) @ Id: 4V @ 1.17mA Supplier Device Package: TOLL Drive Voltage (Max Rds On, Min Rds On): 10V Vgs (Max): ±30V Drain to Source Voltage (Vdss): 600 V Gate Charge (Qg) (Max) @ Vgs: 43 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 2510 pF @ 300 V |
на замовлення 4000 шт: термін постачання 21-31 дні (днів) |
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TK080U60Z1,RQ | Toshiba Semiconductor and Storage |
Description: N-CH MOSFET, 600 V, 0.08 @10V, TPackaging: Cut Tape (CT) Package / Case: 8-PowerSFN Mounting Type: Surface Mount Operating Temperature: 150°C Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 30A (Ta) Rds On (Max) @ Id, Vgs: 80mOhm @ 10.3A, 10V Power Dissipation (Max): 211W (Tc) Vgs(th) (Max) @ Id: 4V @ 1.17mA Supplier Device Package: TOLL Drive Voltage (Max Rds On, Min Rds On): 10V Vgs (Max): ±30V Drain to Source Voltage (Vdss): 600 V Gate Charge (Qg) (Max) @ Vgs: 43 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 2510 pF @ 300 V |
на замовлення 4000 шт: термін постачання 21-31 дні (днів) |
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CRZ18(TE85L,Q,M) | Toshiba Semiconductor and Storage |
Description: DIODE ZENER 18V 700MW SFLATTolerance: ±10% Packaging: Tape & Reel (TR) Package / Case: SOD-123F Mounting Type: Surface Mount Operating Temperature: -40°C ~ 150°C (TJ) Voltage - Zener (Nom) (Vz): 18 V Impedance (Max) (Zzt): 30 Ohms Supplier Device Package: S-FLAT (1.6x3.5) Power - Max: 700 mW Voltage - Forward (Vf) (Max) @ If: 1 V @ 200 mA Current - Reverse Leakage @ Vr: 10 µA @ 13 V |
на замовлення 3000 шт: термін постачання 21-31 дні (днів) |
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CRZ18(TE85L,Q,M) | Toshiba Semiconductor and Storage |
Description: DIODE ZENER 18V 700MW SFLATTolerance: ±10% Packaging: Cut Tape (CT) Package / Case: SOD-123F Mounting Type: Surface Mount Operating Temperature: -40°C ~ 150°C (TJ) Voltage - Zener (Nom) (Vz): 18 V Impedance (Max) (Zzt): 30 Ohms Supplier Device Package: S-FLAT (1.6x3.5) Power - Max: 700 mW Voltage - Forward (Vf) (Max) @ If: 1 V @ 200 mA Current - Reverse Leakage @ Vr: 10 µA @ 13 V |
на замовлення 5992 шт: термін постачання 21-31 дні (днів) |
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CRS05(TE85L,Q,M) | Toshiba Semiconductor and Storage |
Description: DIODE SCHOTTKY 30V 1A SFLATPackaging: Cut Tape (CT) Package / Case: SOD-123F Mounting Type: Surface Mount Speed: Fast Recovery =< 500ns, > 200mA (Io) Technology: Schottky Current - Average Rectified (Io): 1A Supplier Device Package: S-FLAT (1.6x3.5) Operating Temperature - Junction: -40°C ~ 150°C Voltage - DC Reverse (Vr) (Max): 30 V Voltage - Forward (Vf) (Max) @ If: 450 mV @ 1 A Current - Reverse Leakage @ Vr: 200 µA @ 30 V |
на замовлення 2227 шт: термін постачання 21-31 дні (днів) |
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TC7MBL3125CFK(EL) | Toshiba Semiconductor and Storage |
Description: IC BUS SWITCH 4 X 1:1 14-VSSOPPackaging: Tape & Reel (TR) Package / Case: 14-VFSOP (0.118", 3.00mm Width) Mounting Type: Surface Mount Circuit: 4 x 1:1 Type: Bus Switch Operating Temperature: -40°C ~ 85°C Voltage - Supply: 1.65V ~ 3.6V Independent Circuits: 1 Voltage Supply Source: Single Supply Supplier Device Package: 14-VSSOP |
на замовлення 2500 шт: термін постачання 21-31 дні (днів) |
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TC7MBL3125CFK(EL) | Toshiba Semiconductor and Storage |
Description: IC BUS SWITCH 4 X 1:1 14-VSSOPPackaging: Cut Tape (CT) Package / Case: 14-VFSOP (0.118", 3.00mm Width) Mounting Type: Surface Mount Circuit: 4 x 1:1 Type: Bus Switch Operating Temperature: -40°C ~ 85°C Voltage - Supply: 1.65V ~ 3.6V Independent Circuits: 1 Voltage Supply Source: Single Supply Supplier Device Package: 14-VSSOP |
на замовлення 7314 шт: термін постачання 21-31 дні (днів) |
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TK20J50D(F) | Toshiba Semiconductor and Storage |
Description: MOSFET N-CH 500V 20A TO3PPackaging: Tube Package / Case: TO-3P-3, SC-65-3 Mounting Type: Through Hole Operating Temperature: 150°C Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 20A Rds On (Max) @ Id, Vgs: 270mOhm @ 10A, 10V Power Dissipation (Max): 280W Vgs(th) (Max) @ Id: 4V @ 1mA Supplier Device Package: TO-3P(N) Drive Voltage (Max Rds On, Min Rds On): 10V Vgs (Max): ±30V Drain to Source Voltage (Vdss): 500 V Gate Charge (Qg) (Max) @ Vgs: 45 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 2600 pF @ 25 V |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||||||||||||
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TCR2LN21,LF(SE | Toshiba Semiconductor and Storage |
Description: IC REG LINEAR 2.1V 200MA 4-SDFNPackaging: Tape & Reel (TR) Package / Case: 4-XFDFN Exposed Pad Output Type: Fixed Mounting Type: Surface Mount Current - Output: 200mA Operating Temperature: -40°C ~ 85°C (TJ) Output Configuration: Positive Current - Quiescent (Iq): 2 µA Voltage - Input (Max): 5.5V Number of Regulators: 1 Supplier Device Package: 4-SDFN (0.8x0.8) Voltage - Output (Min/Fixed): 2.1V Control Features: Enable Voltage Dropout (Max): 0.54V @ 150mA Protection Features: Over Current |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||||||||||||
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TCR2LN21,LF(SE | Toshiba Semiconductor and Storage |
Description: IC REG LINEAR 2.1V 200MA 4-SDFNPackaging: Cut Tape (CT) Package / Case: 4-XFDFN Exposed Pad Output Type: Fixed Mounting Type: Surface Mount Current - Output: 200mA Operating Temperature: -40°C ~ 85°C (TJ) Output Configuration: Positive Current - Quiescent (Iq): 2 µA Voltage - Input (Max): 5.5V Number of Regulators: 1 Supplier Device Package: 4-SDFN (0.8x0.8) Voltage - Output (Min/Fixed): 2.1V Control Features: Enable Voltage Dropout (Max): 0.54V @ 150mA Protection Features: Over Current |
на замовлення 8179 шт: термін постачання 21-31 дні (днів) |
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| 74LVC2T45FK,LF(CT | Toshiba Semiconductor and Storage |
Description: IC XLTR VL BIDIR US8Packaging: Tape & Reel (TR) Package / Case: 8-VFSOP (0.091", 2.30mm Width) Output Type: Tri-State Mounting Type: Surface Mount Operating Temperature: -40°C ~ 125°C (TA) Supplier Device Package: US8 Channel Type: Bidirectional Translator Type: Voltage Level Channels per Circuit: 2 Voltage - VCCA: 1.65 V ~ 5.5 V Voltage - VCCB: 1.65 V ~ 5.5 V Number of Circuits: 1 |
товару немає в наявності |
В кошику од. на суму грн. | |||||||||||||||||||
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TB67S149FG,EL | Toshiba Semiconductor and Storage |
Description: IC MOTOR DRIVER UNIPOLAR 28HSSOPPackaging: Tape & Reel (TR) Package / Case: 28-SOP (0.295", 7.50mm Width) + 2 Heat Tabs Mounting Type: Surface Mount Function: Driver - Fully Integrated, Control and Power Stage Current - Output: 3A Interface: Parallel Operating Temperature: -20°C ~ 85°C (TA) Output Configuration: Half Bridge (2) Voltage - Supply: 4.75V ~ 5.25V Applications: General Purpose Technology: Power MOSFET Voltage - Load: 10V ~ 40V Supplier Device Package: 28-HSSOP Motor Type - Stepper: Unipolar Step Resolution: 1 ~ 1/32 |
на замовлення 2000 шт: термін постачання 21-31 дні (днів) |
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TB67S149FG,EL | Toshiba Semiconductor and Storage |
Description: IC MOTOR DRIVER UNIPOLAR 28HSSOPPackaging: Cut Tape (CT) Package / Case: 28-SOP (0.295", 7.50mm Width) + 2 Heat Tabs Mounting Type: Surface Mount Function: Driver - Fully Integrated, Control and Power Stage Current - Output: 3A Interface: Parallel Operating Temperature: -20°C ~ 85°C (TA) Output Configuration: Half Bridge (2) Voltage - Supply: 4.75V ~ 5.25V Applications: General Purpose Technology: Power MOSFET Voltage - Load: 10V ~ 40V Supplier Device Package: 28-HSSOP Motor Type - Stepper: Unipolar Step Resolution: 1 ~ 1/32 |
на замовлення 3362 шт: термін постачання 21-31 дні (днів) |
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TB67S209FTG,EL | Toshiba Semiconductor and Storage |
Description: STEPPER MOTOR DRIVER IC, 50V/4.0Packaging: Tape & Reel (TR) Package / Case: 48-WFQFN Exposed Pad Mounting Type: Surface Mount Function: Driver - Fully Integrated, Control and Power Stage Current - Output: 3A Interface: Parallel Operating Temperature: -20°C ~ 85°C Output Configuration: Half Bridge (4) Voltage - Supply: 4.75V ~ 5.25V Applications: General Purpose Technology: NMOS, PMOS Voltage - Load: 10V ~ 47V Supplier Device Package: 48-WQFN (7x7) Motor Type - Stepper: Bipolar Motor Type - AC, DC: Brushed DC Step Resolution: 1, 1/2, 1/4, 1/8, 1/16, 1/32 |
на замовлення 4000 шт: термін постачання 21-31 дні (днів) |
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TB67S209FTG,EL | Toshiba Semiconductor and Storage |
Description: STEPPER MOTOR DRIVER IC, 50V/4.0Packaging: Cut Tape (CT) Package / Case: 48-WFQFN Exposed Pad Mounting Type: Surface Mount Function: Driver - Fully Integrated, Control and Power Stage Current - Output: 3A Interface: Parallel Operating Temperature: -20°C ~ 85°C Output Configuration: Half Bridge (4) Voltage - Supply: 4.75V ~ 5.25V Applications: General Purpose Technology: NMOS, PMOS Voltage - Load: 10V ~ 47V Supplier Device Package: 48-WQFN (7x7) Motor Type - Stepper: Bipolar Motor Type - AC, DC: Brushed DC Step Resolution: 1, 1/2, 1/4, 1/8, 1/16, 1/32 |
на замовлення 4000 шт: термін постачання 21-31 дні (днів) |
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TB67S579FTG(O,EL) | Toshiba Semiconductor and Storage |
Description: 2.0A/40V STEPPING MOTOR DRIVER IPackaging: Tape & Reel (TR) Package / Case: 48-VFQFN Exposed Pad Mounting Type: Surface Mount, Wettable Flank Function: Driver - Fully Integrated, Control and Power Stage Interface: PWM Operating Temperature: -40°C ~ 85°C Output Configuration: Half Bridge (4) Voltage - Supply: 2V ~ 5.5V Applications: General Purpose Technology: DMOS Voltage - Load: 4.5V ~ 34V Supplier Device Package: 48-VQFN (7x7) Motor Type - Stepper: Bipolar Motor Type - AC, DC: Brushless DC (BLDC) Step Resolution: 1, 1/2, 1/4, 1/8, 1/16, 1/32 |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||||||||||||
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TB67S579FTG(O,EL) | Toshiba Semiconductor and Storage |
Description: 2.0A/40V STEPPING MOTOR DRIVER IPackaging: Cut Tape (CT) Package / Case: 48-VFQFN Exposed Pad Mounting Type: Surface Mount, Wettable Flank Function: Driver - Fully Integrated, Control and Power Stage Interface: PWM Operating Temperature: -40°C ~ 85°C Output Configuration: Half Bridge (4) Voltage - Supply: 2V ~ 5.5V Applications: General Purpose Technology: DMOS Voltage - Load: 4.5V ~ 34V Supplier Device Package: 48-VQFN (7x7) Motor Type - Stepper: Bipolar Motor Type - AC, DC: Brushless DC (BLDC) Step Resolution: 1, 1/2, 1/4, 1/8, 1/16, 1/32 |
на замовлення 3427 шт: термін постачання 21-31 дні (днів) |
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TB67S559FTG(O,EL) | Toshiba Semiconductor and Storage |
Description: STEPPER MOTOR DRIVER IC, 50V/3.0Packaging: Tape & Reel (TR) Package / Case: 32-VFQFN Exposed Pad Mounting Type: Surface Mount Function: Driver - Fully Integrated, Control and Power Stage Current - Output: 3A Interface: Parallel, PWM Operating Temperature: -40°C ~ 85°C Output Configuration: Half Bridge (4) Voltage - Supply: 8.2V ~ 44V Applications: General Purpose Technology: DMOS Voltage - Load: 8.2V ~ 44V Supplier Device Package: 32-VQFN (5x5) Motor Type - Stepper: Bipolar Motor Type - AC, DC: Brushless DC (BLDC) Step Resolution: 1, 1/2, 1/4, 1/8, 1/16, 1/32 |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||||||||||||
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TB67S559FTG(O,EL) | Toshiba Semiconductor and Storage |
Description: STEPPER MOTOR DRIVER IC, 50V/3.0Packaging: Cut Tape (CT) Package / Case: 32-VFQFN Exposed Pad Mounting Type: Surface Mount Function: Driver - Fully Integrated, Control and Power Stage Current - Output: 3A Interface: Parallel, PWM Operating Temperature: -40°C ~ 85°C Output Configuration: Half Bridge (4) Voltage - Supply: 8.2V ~ 44V Applications: General Purpose Technology: DMOS Voltage - Load: 8.2V ~ 44V Supplier Device Package: 32-VQFN (5x5) Motor Type - Stepper: Bipolar Motor Type - AC, DC: Brushless DC (BLDC) Step Resolution: 1, 1/2, 1/4, 1/8, 1/16, 1/32 |
на замовлення 3494 шт: термін постачання 21-31 дні (днів) |
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| CUZ75V,H3F | Toshiba Semiconductor and Storage |
Description: 75 V ZENER DIODE, SOD-323 SOD-32Packaging: Tape & Reel (TR) Package / Case: SC-76, SOD-323 Mounting Type: Surface Mount Type: Zener Operating Temperature: 150°C (TJ) Applications: General Purpose Capacitance @ Frequency: 24pF @ 1MHz Current - Peak Pulse (10/1000µs): 5A (8/20µs) Voltage - Reverse Standoff (Typ): 66V (Max) Supplier Device Package: USC Unidirectional Channels: 1 Voltage - Breakdown (Min): 70V Voltage - Clamping (Max) @ Ipp: 112V Power - Peak Pulse: 620W Power Line Protection: No |
на замовлення 3000 шт: термін постачання 21-31 дні (днів) |
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| CUZ75V,H3F | Toshiba Semiconductor and Storage |
Description: 75 V ZENER DIODE, SOD-323 SOD-32Packaging: Cut Tape (CT) Package / Case: SC-76, SOD-323 Mounting Type: Surface Mount Type: Zener Operating Temperature: 150°C (TJ) Applications: General Purpose Capacitance @ Frequency: 24pF @ 1MHz Current - Peak Pulse (10/1000µs): 5A (8/20µs) Voltage - Reverse Standoff (Typ): 66V (Max) Supplier Device Package: USC Unidirectional Channels: 1 Voltage - Breakdown (Min): 70V Voltage - Clamping (Max) @ Ipp: 112V Power - Peak Pulse: 620W Power Line Protection: No |
на замовлення 3000 шт: термін постачання 21-31 дні (днів) |
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TBD62503APG | Toshiba Semiconductor and Storage |
Description: IC PWR SWITCH N-CHAN 1:1 16DIPPackaging: Tube Package / Case: 16-DIP (0.300", 7.62mm) Output Type: N-Channel Mounting Type: Through Hole Number of Outputs: 7 Interface: On/Off Switch Type: General Purpose Operating Temperature: -40°C ~ 85°C (TA) Output Configuration: Low Side Input Type: Inverting Voltage - Load: 50V (Max) Voltage - Supply (Vcc/Vdd): Not Required Current - Output (Max): 300mA Ratio - Input:Output: 1:1 Supplier Device Package: 16-DIP |
на замовлення 1803 шт: термін постачання 21-31 дні (днів) |
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TC358748XBG(EL) | Toshiba Semiconductor and Storage |
Description: IC INTFACE SPECIALIZED 80VFBGAPackaging: Tape & Reel (TR) Package / Case: 80-VFBGA Mounting Type: Surface Mount Interface: SPI Voltage - Supply: 1.8V ~ 3.3V Applications: Camera Supplier Device Package: 80-VFBGA (7x7) |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||||||||||||
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TC358748XBG(EL) | Toshiba Semiconductor and Storage |
Description: IC INTFACE SPECIALIZED 80VFBGAPackaging: Cut Tape (CT) Package / Case: 80-VFBGA Mounting Type: Surface Mount Interface: SPI Voltage - Supply: 1.8V ~ 3.3V Applications: Camera Supplier Device Package: 80-VFBGA (7x7) |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||||||||||||
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HN1A01FU-GR,LXHF | Toshiba Semiconductor and Storage |
Description: PNP + PNP BIPOLAR TRANSISTOR, -5Packaging: Tape & Reel (TR) Package / Case: 6-TSSOP, SC-88, SOT-363 Mounting Type: Surface Mount Transistor Type: 2 PNP Power - Max: 200mW Current - Collector (Ic) (Max): 150mA Voltage - Collector Emitter Breakdown (Max): 50V Vce Saturation (Max) @ Ib, Ic: 300mV @ 10mA, 100mA Current - Collector Cutoff (Max): 100nA (ICBO) DC Current Gain (hFE) (Min) @ Ic, Vce: 200 @ 2mA, 6V Frequency - Transition: 80MHz Supplier Device Package: US6 Grade: Automotive Qualification: AEC-Q101 |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||||||||||||
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SSM5P15FU,LF | Toshiba Semiconductor and Storage |
Description: MOSFET 2P-CH 30V 0.1A USVPackaging: Tape & Reel (TR) Package / Case: 5-TSSOP, SC-70-5, SOT-353 Mounting Type: Surface Mount Configuration: 2 P-Channel (Dual) Operating Temperature: 150°C Technology: MOSFET (Metal Oxide) Power - Max: 200mW (Ta) Drain to Source Voltage (Vdss): 30V Current - Continuous Drain (Id) @ 25°C: 100mA (Ta) Input Capacitance (Ciss) (Max) @ Vds: 9.1pF @ 3V Rds On (Max) @ Id, Vgs: 12Ohm @ 10mA, 4V Vgs(th) (Max) @ Id: 1.7V @ 100µA Supplier Device Package: USV |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||||||||||||
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SSM5P15FU,LF | Toshiba Semiconductor and Storage |
Description: MOSFET 2P-CH 30V 0.1A USVPackaging: Cut Tape (CT) Package / Case: 5-TSSOP, SC-70-5, SOT-353 Mounting Type: Surface Mount Configuration: 2 P-Channel (Dual) Operating Temperature: 150°C Technology: MOSFET (Metal Oxide) Power - Max: 200mW (Ta) Drain to Source Voltage (Vdss): 30V Current - Continuous Drain (Id) @ 25°C: 100mA (Ta) Input Capacitance (Ciss) (Max) @ Vds: 9.1pF @ 3V Rds On (Max) @ Id, Vgs: 12Ohm @ 10mA, 4V Vgs(th) (Max) @ Id: 1.7V @ 100µA Supplier Device Package: USV |
на замовлення 2956 шт: термін постачання 21-31 дні (днів) |
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RN2701,LF | Toshiba Semiconductor and Storage |
Description: TRANS PREBIAS 2PNP 50V 100MA USVPackaging: Tape & Reel (TR) Package / Case: 5-TSSOP, SC-70-5, SOT-353 Mounting Type: Surface Mount Transistor Type: 2 PNP - Pre-Biased (Dual) Power - Max: 200mW Current - Collector (Ic) (Max): 100mA Voltage - Collector Emitter Breakdown (Max): 50V Vce Saturation (Max) @ Ib, Ic: 300mV @ 250µA, 5mA Current - Collector Cutoff (Max): 500nA DC Current Gain (hFE) (Min) @ Ic, Vce: 30 @ 10mA, 5V Frequency - Transition: 200MHz Resistor - Base (R1): 4.7kOhms Resistor - Emitter Base (R2): 4.7kOhms Supplier Device Package: USV |
на замовлення 6000 шт: термін постачання 21-31 дні (днів) |
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RN2701,LF | Toshiba Semiconductor and Storage |
Description: TRANS PREBIAS 2PNP 50V 100MA USVPackaging: Cut Tape (CT) Package / Case: 5-TSSOP, SC-70-5, SOT-353 Mounting Type: Surface Mount Transistor Type: 2 PNP - Pre-Biased (Dual) Power - Max: 200mW Current - Collector (Ic) (Max): 100mA Voltage - Collector Emitter Breakdown (Max): 50V Vce Saturation (Max) @ Ib, Ic: 300mV @ 250µA, 5mA Current - Collector Cutoff (Max): 500nA DC Current Gain (hFE) (Min) @ Ic, Vce: 30 @ 10mA, 5V Frequency - Transition: 200MHz Resistor - Base (R1): 4.7kOhms Resistor - Emitter Base (R2): 4.7kOhms Supplier Device Package: USV |
на замовлення 8938 шт: термін постачання 21-31 дні (днів) |
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DF2B6USL,L3F | Toshiba Semiconductor and Storage |
Description: TVS DIODE 5.5VWM 20VC SL2Packaging: Tape & Reel (TR) Package / Case: 2-SMD, No Lead Mounting Type: Surface Mount Type: Zener Operating Temperature: 150°C (TJ) Capacitance @ Frequency: 1.5pF @ 1MHz Current - Peak Pulse (10/1000µs): 1.5A (8/20µs) Voltage - Reverse Standoff (Typ): 5.5V (Max) Supplier Device Package: SL2 Bidirectional Channels: 1 Voltage - Breakdown (Min): 5.7V Voltage - Clamping (Max) @ Ipp: 20V Power - Peak Pulse: 30W Power Line Protection: No |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||||||||||||
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DF2B6USL,L3F | Toshiba Semiconductor and Storage |
Description: TVS DIODE 5.5VWM 20VC SL2Packaging: Cut Tape (CT) Package / Case: 2-SMD, No Lead Mounting Type: Surface Mount Type: Zener Operating Temperature: 150°C (TJ) Capacitance @ Frequency: 1.5pF @ 1MHz Current - Peak Pulse (10/1000µs): 1.5A (8/20µs) Voltage - Reverse Standoff (Typ): 5.5V (Max) Supplier Device Package: SL2 Bidirectional Channels: 1 Voltage - Breakdown (Min): 5.7V Voltage - Clamping (Max) @ Ipp: 20V Power - Peak Pulse: 30W Power Line Protection: No |
на замовлення 492 шт: термін постачання 21-31 дні (днів) |
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DF2S6M5SL,L3F | Toshiba Semiconductor and Storage |
Description: TVS DIODE 5VWM 17VC SL2Packaging: Tape & Reel (TR) Package / Case: 2-SMD, No Lead Mounting Type: Surface Mount Type: Zener Operating Temperature: 150°C (TJ) Applications: General Purpose Capacitance @ Frequency: 0.6pF @ 1MHz Current - Peak Pulse (10/1000µs): 2.5A (8/20µs) Voltage - Reverse Standoff (Typ): 5V (Max) Supplier Device Package: SL2 Unidirectional Channels: 1 Voltage - Breakdown (Min): 5.5V Voltage - Clamping (Max) @ Ipp: 17V (Typ) Power - Peak Pulse: 37W Power Line Protection: No |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||||||||||||
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DF2S6M5SL,L3F | Toshiba Semiconductor and Storage |
Description: TVS DIODE 5VWM 17VC SL2Packaging: Cut Tape (CT) Package / Case: 2-SMD, No Lead Mounting Type: Surface Mount Type: Zener Operating Temperature: 150°C (TJ) Applications: General Purpose Capacitance @ Frequency: 0.6pF @ 1MHz Current - Peak Pulse (10/1000µs): 2.5A (8/20µs) Voltage - Reverse Standoff (Typ): 5V (Max) Supplier Device Package: SL2 Unidirectional Channels: 1 Voltage - Breakdown (Min): 5.5V Voltage - Clamping (Max) @ Ipp: 17V (Typ) Power - Peak Pulse: 37W Power Line Protection: No |
на замовлення 9249 шт: термін постачання 21-31 дні (днів) |
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DF2S30ASL,L3F | Toshiba Semiconductor and Storage |
Description: TVS DIODE 23VWM 58VC SL2Packaging: Tape & Reel (TR) Package / Case: 2-SMD, No Lead Mounting Type: Surface Mount Type: Zener Operating Temperature: 150°C (TJ) Applications: General Purpose Capacitance @ Frequency: 7.5pF @ 1MHz Current - Peak Pulse (10/1000µs): 2.5A (8/20µs) Voltage - Reverse Standoff (Typ): 23V (Max) Supplier Device Package: SL2 Unidirectional Channels: 1 Voltage - Breakdown (Min): 28V Voltage - Clamping (Max) @ Ipp: 58V Power - Peak Pulse: 145W Power Line Protection: No |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||||||||||||
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XCEZ13V,L3XHF | Toshiba Semiconductor and Storage |
Description: 13 V ZENER DIODE, SOD-523(ESC)Packaging: Tape & Reel (TR) Package / Case: SC-79, SOD-523 Mounting Type: Surface Mount Type: Zener Operating Temperature: 150°C (TJ) Capacitance @ Frequency: 42pF @ 1MHz Current - Peak Pulse (10/1000µs): 6.5A (8/20µs) Voltage - Reverse Standoff (Typ): 11V Supplier Device Package: ESC Unidirectional Channels: 1 Voltage - Breakdown (Min): 12.4V Voltage - Clamping (Max) @ Ipp: 27V Power - Peak Pulse: 200W Power Line Protection: No Grade: Automotive Qualification: AEC-Q101 |
на замовлення 16000 шт: термін постачання 21-31 дні (днів) |
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XCEZ13V,L3XHF | Toshiba Semiconductor and Storage |
Description: 13 V ZENER DIODE, SOD-523(ESC)Packaging: Cut Tape (CT) Package / Case: SC-79, SOD-523 Mounting Type: Surface Mount Type: Zener Operating Temperature: 150°C (TJ) Capacitance @ Frequency: 42pF @ 1MHz Current - Peak Pulse (10/1000µs): 6.5A (8/20µs) Voltage - Reverse Standoff (Typ): 11V Supplier Device Package: ESC Unidirectional Channels: 1 Voltage - Breakdown (Min): 12.4V Voltage - Clamping (Max) @ Ipp: 27V Power - Peak Pulse: 200W Power Line Protection: No Grade: Automotive Qualification: AEC-Q101 |
на замовлення 16000 шт: термін постачання 21-31 дні (днів) |
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XCEZ30V,L3XHF | Toshiba Semiconductor and Storage |
Description: 30 V ZENER DIODE, SOD-523(ESC)Packaging: Tape & Reel (TR) Package / Case: SC-79, SOD-523 Mounting Type: Surface Mount Type: Zener Operating Temperature: 150°C (TJ) Capacitance @ Frequency: 21pF @ 1MHz Current - Peak Pulse (10/1000µs): 4A (8/20µs) Voltage - Reverse Standoff (Typ): 27V Supplier Device Package: ESC Unidirectional Channels: 1 Voltage - Breakdown (Min): 28V Voltage - Clamping (Max) @ Ipp: 47.5V Power - Peak Pulse: 200W Power Line Protection: No Grade: Automotive Qualification: AEC-Q101 |
на замовлення 15890 шт: термін постачання 21-31 дні (днів) |
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XCEZ30V,L3XHF | Toshiba Semiconductor and Storage |
Description: 30 V ZENER DIODE, SOD-523(ESC)Packaging: Cut Tape (CT) Package / Case: SC-79, SOD-523 Mounting Type: Surface Mount Type: Zener Operating Temperature: 150°C (TJ) Capacitance @ Frequency: 21pF @ 1MHz Current - Peak Pulse (10/1000µs): 4A (8/20µs) Voltage - Reverse Standoff (Typ): 27V Supplier Device Package: ESC Unidirectional Channels: 1 Voltage - Breakdown (Min): 28V Voltage - Clamping (Max) @ Ipp: 47.5V Power - Peak Pulse: 200W Power Line Protection: No Grade: Automotive Qualification: AEC-Q101 |
на замовлення 15890 шт: термін постачання 21-31 дні (днів) |
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XCEZ22V,L3XHF | Toshiba Semiconductor and Storage |
Description: 22 V ZENER DIODE, SOD-523(ESC)Packaging: Tape & Reel (TR) Package / Case: SC-79, SOD-523 Mounting Type: Surface Mount Type: Zener Operating Temperature: 150°C (TJ) Capacitance @ Frequency: 27pF @ 1MHz Current - Peak Pulse (10/1000µs): 4.75A (8/20µs) Voltage - Reverse Standoff (Typ): 18V Supplier Device Package: ESC Unidirectional Channels: 1 Voltage - Breakdown (Min): 20.8V Voltage - Clamping (Max) @ Ipp: 32V Power - Peak Pulse: 200W Power Line Protection: No Grade: Automotive Qualification: AEC-Q101 |
на замовлення 15380 шт: термін постачання 21-31 дні (днів) |
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XCEZ22V,L3XHF | Toshiba Semiconductor and Storage |
Description: 22 V ZENER DIODE, SOD-523(ESC)Packaging: Cut Tape (CT) Package / Case: SC-79, SOD-523 Mounting Type: Surface Mount Type: Zener Operating Temperature: 150°C (TJ) Capacitance @ Frequency: 27pF @ 1MHz Current - Peak Pulse (10/1000µs): 4.75A (8/20µs) Voltage - Reverse Standoff (Typ): 18V Supplier Device Package: ESC Unidirectional Channels: 1 Voltage - Breakdown (Min): 20.8V Voltage - Clamping (Max) @ Ipp: 32V Power - Peak Pulse: 200W Power Line Protection: No Grade: Automotive Qualification: AEC-Q101 |
на замовлення 15380 шт: термін постачання 21-31 дні (днів) |
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XCEZ27V,L3XHF | Toshiba Semiconductor and Storage |
Description: 27 V ZENER DIODE, SOD-523(ESC) APackaging: Tape & Reel (TR) Package / Case: SC-79, SOD-523 Mounting Type: Surface Mount Type: Zener Operating Temperature: 150°C (TJ) Capacitance @ Frequency: 23pF @ 1MHz Current - Peak Pulse (10/1000µs): 4.1A (8/20µs) Voltage - Reverse Standoff (Typ): 23V (Max) Supplier Device Package: ESC Unidirectional Channels: 1 Voltage - Breakdown (Min): 25.1V Voltage - Clamping (Max) @ Ipp: 45V Power - Peak Pulse: 200W Power Line Protection: No Grade: Automotive Qualification: AEC-Q101 |
на замовлення 15900 шт: термін постачання 21-31 дні (днів) |
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XCEZ27V,L3XHF | Toshiba Semiconductor and Storage |
Description: 27 V ZENER DIODE, SOD-523(ESC) APackaging: Cut Tape (CT) Package / Case: SC-79, SOD-523 Mounting Type: Surface Mount Type: Zener Operating Temperature: 150°C (TJ) Capacitance @ Frequency: 23pF @ 1MHz Current - Peak Pulse (10/1000µs): 4.1A (8/20µs) Voltage - Reverse Standoff (Typ): 23V (Max) Supplier Device Package: ESC Unidirectional Channels: 1 Voltage - Breakdown (Min): 25.1V Voltage - Clamping (Max) @ Ipp: 45V Power - Peak Pulse: 200W Power Line Protection: No Grade: Automotive Qualification: AEC-Q101 |
на замовлення 15900 шт: термін постачання 21-31 дні (днів) |
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| 74HC4538D |
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Виробник: Toshiba Semiconductor and Storage
Description: IC MMV 2-CIR 25-NS 16-SOIC
Packaging: Cut Tape (CT)
Package / Case: 16-SOIC (0.154", 3.90mm Width)
Mounting Type: Surface Mount
Logic Type: Monostable
Operating Temperature: -40°C ~ 125°C (TA)
Propagation Delay: 25 ns
Independent Circuits: 2
Current - Output High, Low: 5.2mA, 5.2mA
Schmitt Trigger Input: Yes
Supplier Device Package: 16-SOIC
Voltage - Supply: 2 V ~ 6 V
Description: IC MMV 2-CIR 25-NS 16-SOIC
Packaging: Cut Tape (CT)
Package / Case: 16-SOIC (0.154", 3.90mm Width)
Mounting Type: Surface Mount
Logic Type: Monostable
Operating Temperature: -40°C ~ 125°C (TA)
Propagation Delay: 25 ns
Independent Circuits: 2
Current - Output High, Low: 5.2mA, 5.2mA
Schmitt Trigger Input: Yes
Supplier Device Package: 16-SOIC
Voltage - Supply: 2 V ~ 6 V
на замовлення 1640 шт:
термін постачання 21-31 дні (днів)| Кількість | Ціна |
|---|---|
| 15+ | 20.98 грн |
| 22+ | 13.77 грн |
| 25+ | 12.21 грн |
| 100+ | 9.86 грн |
| 250+ | 9.09 грн |
| 500+ | 8.63 грн |
| 1000+ | 8.12 грн |
| MN06ACA10T |
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Виробник: Toshiba Semiconductor and Storage
Description: HDD 10TB 3.5" SATA III 5V/12V
Packaging: Bulk
Size / Dimension: 147.00mm x 101.85mm x 26.10mm
Memory Size: 10TB
Memory Type: Magnetic Disk (HDD)
Type: SATA III
Operating Temperature: 0°C ~ 60°C
Voltage - Supply: 5V, 12V
Form Factor: 3.5"
Description: HDD 10TB 3.5" SATA III 5V/12V
Packaging: Bulk
Size / Dimension: 147.00mm x 101.85mm x 26.10mm
Memory Size: 10TB
Memory Type: Magnetic Disk (HDD)
Type: SATA III
Operating Temperature: 0°C ~ 60°C
Voltage - Supply: 5V, 12V
Form Factor: 3.5"
товару немає в наявності
В кошику
од. на суму грн.
| MN06ACA600 |
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Виробник: Toshiba Semiconductor and Storage
Description: HDD 6TB 3.5" SATA III 5V/12V
Packaging: Bulk
Size / Dimension: 147.00mm x 101.85mm x 26.10mm
Memory Size: 6TB
Memory Type: Magnetic Disk (HDD)
Type: SATA III
Operating Temperature: 0°C ~ 60°C
Voltage - Supply: 5V, 12V
Form Factor: 3.5"
Description: HDD 6TB 3.5" SATA III 5V/12V
Packaging: Bulk
Size / Dimension: 147.00mm x 101.85mm x 26.10mm
Memory Size: 6TB
Memory Type: Magnetic Disk (HDD)
Type: SATA III
Operating Temperature: 0°C ~ 60°C
Voltage - Supply: 5V, 12V
Form Factor: 3.5"
товару немає в наявності
В кошику
од. на суму грн.
| MN06ACA800 |
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Виробник: Toshiba Semiconductor and Storage
Description: HDD 8TB 3.5" SATA III 5V/12V
Packaging: Bulk
Size / Dimension: 147.00mm x 101.85mm x 26.10mm
Memory Size: 8TB
Memory Type: Magnetic Disk (HDD)
Type: SATA III
Operating Temperature: 0°C ~ 60°C
Voltage - Supply: 5V, 12V
Form Factor: 3.5"
Description: HDD 8TB 3.5" SATA III 5V/12V
Packaging: Bulk
Size / Dimension: 147.00mm x 101.85mm x 26.10mm
Memory Size: 8TB
Memory Type: Magnetic Disk (HDD)
Type: SATA III
Operating Temperature: 0°C ~ 60°C
Voltage - Supply: 5V, 12V
Form Factor: 3.5"
товару немає в наявності
В кошику
од. на суму грн.
| TLP387(TPR,E |
![]() |
Виробник: Toshiba Semiconductor and Storage
Description: OPTOISOLATOR 5KV 1CH DARL 6-SO
Packaging: Tape & Reel (TR)
Package / Case: 6-SOIC (0.295", 7.50mm Width), 4 Leads
Output Type: Darlington
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 110°C
Voltage - Forward (Vf) (Typ): 1.25V
Input Type: DC
Current - Output / Channel: 150mA
Voltage - Isolation: 5000Vrms
Current Transfer Ratio (Min): 1000% @ 1mA
Vce Saturation (Max): 1V
Supplier Device Package: 6-SO, 4 Lead
Voltage - Output (Max): 300V
Turn On / Turn Off Time (Typ): 50µs, 15µs
Rise / Fall Time (Typ): 40µs, 15µs
Number of Channels: 1
Current - DC Forward (If) (Max): 50 mA
Description: OPTOISOLATOR 5KV 1CH DARL 6-SO
Packaging: Tape & Reel (TR)
Package / Case: 6-SOIC (0.295", 7.50mm Width), 4 Leads
Output Type: Darlington
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 110°C
Voltage - Forward (Vf) (Typ): 1.25V
Input Type: DC
Current - Output / Channel: 150mA
Voltage - Isolation: 5000Vrms
Current Transfer Ratio (Min): 1000% @ 1mA
Vce Saturation (Max): 1V
Supplier Device Package: 6-SO, 4 Lead
Voltage - Output (Max): 300V
Turn On / Turn Off Time (Typ): 50µs, 15µs
Rise / Fall Time (Typ): 40µs, 15µs
Number of Channels: 1
Current - DC Forward (If) (Max): 50 mA
на замовлення 6000 шт:
термін постачання 21-31 дні (днів)| Кількість | Ціна |
|---|---|
| 3000+ | 20.72 грн |
| 6000+ | 18.98 грн |
| TLP387(TPR,E |
![]() |
Виробник: Toshiba Semiconductor and Storage
Description: OPTOISOLATOR 5KV 1CH DARL 6-SO
Packaging: Cut Tape (CT)
Package / Case: 6-SOIC (0.295", 7.50mm Width), 4 Leads
Output Type: Darlington
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 110°C
Voltage - Forward (Vf) (Typ): 1.25V
Input Type: DC
Current - Output / Channel: 150mA
Voltage - Isolation: 5000Vrms
Current Transfer Ratio (Min): 1000% @ 1mA
Vce Saturation (Max): 1V
Supplier Device Package: 6-SO, 4 Lead
Voltage - Output (Max): 300V
Turn On / Turn Off Time (Typ): 50µs, 15µs
Rise / Fall Time (Typ): 40µs, 15µs
Number of Channels: 1
Current - DC Forward (If) (Max): 50 mA
Description: OPTOISOLATOR 5KV 1CH DARL 6-SO
Packaging: Cut Tape (CT)
Package / Case: 6-SOIC (0.295", 7.50mm Width), 4 Leads
Output Type: Darlington
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 110°C
Voltage - Forward (Vf) (Typ): 1.25V
Input Type: DC
Current - Output / Channel: 150mA
Voltage - Isolation: 5000Vrms
Current Transfer Ratio (Min): 1000% @ 1mA
Vce Saturation (Max): 1V
Supplier Device Package: 6-SO, 4 Lead
Voltage - Output (Max): 300V
Turn On / Turn Off Time (Typ): 50µs, 15µs
Rise / Fall Time (Typ): 40µs, 15µs
Number of Channels: 1
Current - DC Forward (If) (Max): 50 mA
на замовлення 8436 шт:
термін постачання 21-31 дні (днів)| Кількість | Ціна |
|---|---|
| 6+ | 56.72 грн |
| 10+ | 38.01 грн |
| 100+ | 27.87 грн |
| 500+ | 21.90 грн |
| 1000+ | 20.51 грн |
| TLP387(D4-TPR,E |
![]() |
Виробник: Toshiba Semiconductor and Storage
Description: OPTOISOLATOR 5KV 1CH DARL 6-SO
Packaging: Tape & Reel (TR)
Package / Case: 6-SOIC (0.295", 7.50mm Width), 4 Leads
Output Type: Darlington
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 110°C
Voltage - Forward (Vf) (Typ): 1.25V
Input Type: DC
Current - Output / Channel: 150mA
Voltage - Isolation: 5000Vrms
Current Transfer Ratio (Min): 1000% @ 1mA
Vce Saturation (Max): 1V
Supplier Device Package: 6-SO, 4 Lead
Voltage - Output (Max): 300V
Turn On / Turn Off Time (Typ): 50µs, 15µs
Rise / Fall Time (Typ): 40µs, 15µs
Number of Channels: 1
Current - DC Forward (If) (Max): 50 mA
Description: OPTOISOLATOR 5KV 1CH DARL 6-SO
Packaging: Tape & Reel (TR)
Package / Case: 6-SOIC (0.295", 7.50mm Width), 4 Leads
Output Type: Darlington
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 110°C
Voltage - Forward (Vf) (Typ): 1.25V
Input Type: DC
Current - Output / Channel: 150mA
Voltage - Isolation: 5000Vrms
Current Transfer Ratio (Min): 1000% @ 1mA
Vce Saturation (Max): 1V
Supplier Device Package: 6-SO, 4 Lead
Voltage - Output (Max): 300V
Turn On / Turn Off Time (Typ): 50µs, 15µs
Rise / Fall Time (Typ): 40µs, 15µs
Number of Channels: 1
Current - DC Forward (If) (Max): 50 mA
на замовлення 3000 шт:
термін постачання 21-31 дні (днів)| Кількість | Ціна |
|---|---|
| 3000+ | 20.72 грн |
| TLP387(D4-TPR,E |
![]() |
Виробник: Toshiba Semiconductor and Storage
Description: OPTOISOLATOR 5KV 1CH DARL 6-SO
Packaging: Cut Tape (CT)
Package / Case: 6-SOIC (0.295", 7.50mm Width), 4 Leads
Output Type: Darlington
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 110°C
Voltage - Forward (Vf) (Typ): 1.25V
Input Type: DC
Current - Output / Channel: 150mA
Voltage - Isolation: 5000Vrms
Current Transfer Ratio (Min): 1000% @ 1mA
Vce Saturation (Max): 1V
Supplier Device Package: 6-SO, 4 Lead
Voltage - Output (Max): 300V
Turn On / Turn Off Time (Typ): 50µs, 15µs
Rise / Fall Time (Typ): 40µs, 15µs
Number of Channels: 1
Current - DC Forward (If) (Max): 50 mA
Description: OPTOISOLATOR 5KV 1CH DARL 6-SO
Packaging: Cut Tape (CT)
Package / Case: 6-SOIC (0.295", 7.50mm Width), 4 Leads
Output Type: Darlington
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 110°C
Voltage - Forward (Vf) (Typ): 1.25V
Input Type: DC
Current - Output / Channel: 150mA
Voltage - Isolation: 5000Vrms
Current Transfer Ratio (Min): 1000% @ 1mA
Vce Saturation (Max): 1V
Supplier Device Package: 6-SO, 4 Lead
Voltage - Output (Max): 300V
Turn On / Turn Off Time (Typ): 50µs, 15µs
Rise / Fall Time (Typ): 40µs, 15µs
Number of Channels: 1
Current - DC Forward (If) (Max): 50 mA
на замовлення 4373 шт:
термін постачання 21-31 дні (днів)| Кількість | Ціна |
|---|---|
| 6+ | 56.72 грн |
| 10+ | 38.01 грн |
| 100+ | 27.87 грн |
| 500+ | 21.90 грн |
| 1000+ | 20.51 грн |
| TLP387(D4,E |
![]() |
Виробник: Toshiba Semiconductor and Storage
Description: OPTOISOLATOR 5KV 1CH DARL 6-SO
Packaging: Tube
Package / Case: 6-SOIC (0.295", 7.50mm Width), 4 Leads
Output Type: Darlington
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 110°C
Voltage - Forward (Vf) (Typ): 1.25V
Input Type: DC
Current - Output / Channel: 150mA
Voltage - Isolation: 5000Vrms
Current Transfer Ratio (Min): 1000% @ 1mA
Vce Saturation (Max): 1.2V
Supplier Device Package: 6-SO, 4 Lead
Voltage - Output (Max): 300V
Turn On / Turn Off Time (Typ): 50µs, 15µs
Rise / Fall Time (Typ): 40µs, 15µs
Number of Channels: 1
Current - DC Forward (If) (Max): 50 mA
Description: OPTOISOLATOR 5KV 1CH DARL 6-SO
Packaging: Tube
Package / Case: 6-SOIC (0.295", 7.50mm Width), 4 Leads
Output Type: Darlington
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 110°C
Voltage - Forward (Vf) (Typ): 1.25V
Input Type: DC
Current - Output / Channel: 150mA
Voltage - Isolation: 5000Vrms
Current Transfer Ratio (Min): 1000% @ 1mA
Vce Saturation (Max): 1.2V
Supplier Device Package: 6-SO, 4 Lead
Voltage - Output (Max): 300V
Turn On / Turn Off Time (Typ): 50µs, 15µs
Rise / Fall Time (Typ): 40µs, 15µs
Number of Channels: 1
Current - DC Forward (If) (Max): 50 mA
на замовлення 195 шт:
термін постачання 21-31 дні (днів)| Кількість | Ціна |
|---|---|
| 6+ | 56.72 грн |
| 10+ | 38.01 грн |
| 125+ | 27.13 грн |
| TK115U65Z5,RQ |
![]() |
Виробник: Toshiba Semiconductor and Storage
Description: N-CH MOSFET, 650 V, 0.115 @10V,
Packaging: Tape & Reel (TR)
Package / Case: 8-PowerSFN
Mounting Type: Surface Mount
Operating Temperature: 150°C
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 24A (Ta)
Rds On (Max) @ Id, Vgs: 115mOhm @ 12A, 10V
Power Dissipation (Max): 190W (Tc)
Vgs(th) (Max) @ Id: 4.5V @ 1.02mA
Supplier Device Package: TOLL
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±30V
Drain to Source Voltage (Vdss): 650 V
Gate Charge (Qg) (Max) @ Vgs: 42 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 2280 pF @ 300 V
Description: N-CH MOSFET, 650 V, 0.115 @10V,
Packaging: Tape & Reel (TR)
Package / Case: 8-PowerSFN
Mounting Type: Surface Mount
Operating Temperature: 150°C
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 24A (Ta)
Rds On (Max) @ Id, Vgs: 115mOhm @ 12A, 10V
Power Dissipation (Max): 190W (Tc)
Vgs(th) (Max) @ Id: 4.5V @ 1.02mA
Supplier Device Package: TOLL
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±30V
Drain to Source Voltage (Vdss): 650 V
Gate Charge (Qg) (Max) @ Vgs: 42 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 2280 pF @ 300 V
на замовлення 4000 шт:
термін постачання 21-31 дні (днів)| Кількість | Ціна |
|---|---|
| 2000+ | 163.59 грн |
| TK115U65Z5,RQ |
![]() |
Виробник: Toshiba Semiconductor and Storage
Description: N-CH MOSFET, 650 V, 0.115 @10V,
Packaging: Cut Tape (CT)
Package / Case: 8-PowerSFN
Mounting Type: Surface Mount
Operating Temperature: 150°C
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 24A (Ta)
Rds On (Max) @ Id, Vgs: 115mOhm @ 12A, 10V
Power Dissipation (Max): 190W (Tc)
Vgs(th) (Max) @ Id: 4.5V @ 1.02mA
Supplier Device Package: TOLL
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±30V
Drain to Source Voltage (Vdss): 650 V
Gate Charge (Qg) (Max) @ Vgs: 42 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 2280 pF @ 300 V
Description: N-CH MOSFET, 650 V, 0.115 @10V,
Packaging: Cut Tape (CT)
Package / Case: 8-PowerSFN
Mounting Type: Surface Mount
Operating Temperature: 150°C
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 24A (Ta)
Rds On (Max) @ Id, Vgs: 115mOhm @ 12A, 10V
Power Dissipation (Max): 190W (Tc)
Vgs(th) (Max) @ Id: 4.5V @ 1.02mA
Supplier Device Package: TOLL
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±30V
Drain to Source Voltage (Vdss): 650 V
Gate Charge (Qg) (Max) @ Vgs: 42 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 2280 pF @ 300 V
на замовлення 4000 шт:
термін постачання 21-31 дні (днів)| Кількість | Ціна |
|---|---|
| 1+ | 415.71 грн |
| 10+ | 268.40 грн |
| 100+ | 193.78 грн |
| 500+ | 180.95 грн |
| TK099N60Z1,S1F |
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Виробник: Toshiba Semiconductor and Storage
Description: N-CH MOSFET, 600 V, 0.099 @10V,
Packaging: Tube
Package / Case: TO-247-3
Mounting Type: Through Hole
Operating Temperature: 150°C
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 25A (Ta)
Rds On (Max) @ Id, Vgs: 99mOhm @ 8.1A, 10V
Power Dissipation (Max): 176W (Tc)
Vgs(th) (Max) @ Id: 4V @ 930µA
Supplier Device Package: TO-247
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±30V
Drain to Source Voltage (Vdss): 600 V
Gate Charge (Qg) (Max) @ Vgs: 36 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 2050 pF @ 300 V
Description: N-CH MOSFET, 600 V, 0.099 @10V,
Packaging: Tube
Package / Case: TO-247-3
Mounting Type: Through Hole
Operating Temperature: 150°C
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 25A (Ta)
Rds On (Max) @ Id, Vgs: 99mOhm @ 8.1A, 10V
Power Dissipation (Max): 176W (Tc)
Vgs(th) (Max) @ Id: 4V @ 930µA
Supplier Device Package: TO-247
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±30V
Drain to Source Voltage (Vdss): 600 V
Gate Charge (Qg) (Max) @ Vgs: 36 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 2050 pF @ 300 V
на замовлення 60 шт:
термін постачання 21-31 дні (днів)| Кількість | Ціна |
|---|---|
| 1+ | 341.12 грн |
| 30+ | 184.82 грн |
| TK155U60Z1,RQ |
![]() |
Виробник: Toshiba Semiconductor and Storage
Description: N-CH MOSFET, 600 V, 0.155 @10V,
Packaging: Tape & Reel (TR)
Package / Case: 8-PowerSFN
Mounting Type: Surface Mount
Operating Temperature: 150°C
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 17A (Ta)
Rds On (Max) @ Id, Vgs: 155mOhm @ 5.4A, 10V
Power Dissipation (Max): 130W (Tc)
Vgs(th) (Max) @ Id: 4V @ 610µA
Supplier Device Package: TOLL
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±30V
Drain to Source Voltage (Vdss): 600 V
Gate Charge (Qg) (Max) @ Vgs: 24 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 1350 pF @ 300 V
Description: N-CH MOSFET, 600 V, 0.155 @10V,
Packaging: Tape & Reel (TR)
Package / Case: 8-PowerSFN
Mounting Type: Surface Mount
Operating Temperature: 150°C
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 17A (Ta)
Rds On (Max) @ Id, Vgs: 155mOhm @ 5.4A, 10V
Power Dissipation (Max): 130W (Tc)
Vgs(th) (Max) @ Id: 4V @ 610µA
Supplier Device Package: TOLL
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±30V
Drain to Source Voltage (Vdss): 600 V
Gate Charge (Qg) (Max) @ Vgs: 24 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 1350 pF @ 300 V
на замовлення 2000 шт:
термін постачання 21-31 дні (днів)| Кількість | Ціна |
|---|---|
| 2000+ | 79.28 грн |
| TK155U60Z1,RQ |
![]() |
Виробник: Toshiba Semiconductor and Storage
Description: N-CH MOSFET, 600 V, 0.155 @10V,
Packaging: Cut Tape (CT)
Package / Case: 8-PowerSFN
Mounting Type: Surface Mount
Operating Temperature: 150°C
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 17A (Ta)
Rds On (Max) @ Id, Vgs: 155mOhm @ 5.4A, 10V
Power Dissipation (Max): 130W (Tc)
Vgs(th) (Max) @ Id: 4V @ 610µA
Supplier Device Package: TOLL
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±30V
Drain to Source Voltage (Vdss): 600 V
Gate Charge (Qg) (Max) @ Vgs: 24 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 1350 pF @ 300 V
Description: N-CH MOSFET, 600 V, 0.155 @10V,
Packaging: Cut Tape (CT)
Package / Case: 8-PowerSFN
Mounting Type: Surface Mount
Operating Temperature: 150°C
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 17A (Ta)
Rds On (Max) @ Id, Vgs: 155mOhm @ 5.4A, 10V
Power Dissipation (Max): 130W (Tc)
Vgs(th) (Max) @ Id: 4V @ 610µA
Supplier Device Package: TOLL
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±30V
Drain to Source Voltage (Vdss): 600 V
Gate Charge (Qg) (Max) @ Vgs: 24 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 1350 pF @ 300 V
на замовлення 3995 шт:
термін постачання 21-31 дні (днів)| Кількість | Ціна |
|---|---|
| 2+ | 247.10 грн |
| 10+ | 155.56 грн |
| 100+ | 108.39 грн |
| 500+ | 82.82 грн |
| 1000+ | 82.29 грн |
| TK125U60Z1,RQ |
![]() |
Виробник: Toshiba Semiconductor and Storage
Description: N-CH MOSFET, 600 V, 0.125 @10V,
Packaging: Tape & Reel (TR)
Package / Case: 8-PowerSFN
Mounting Type: Surface Mount
Operating Temperature: 150°C
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 20A (Ta)
Rds On (Max) @ Id, Vgs: 125mOhm @ 6A, 10V
Power Dissipation (Max): 150W (Tc)
Vgs(th) (Max) @ Id: 4V @ 730µA
Supplier Device Package: TOLL
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±30V
Drain to Source Voltage (Vdss): 600 V
Gate Charge (Qg) (Max) @ Vgs: 28 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 1620 pF @ 300 V
Description: N-CH MOSFET, 600 V, 0.125 @10V,
Packaging: Tape & Reel (TR)
Package / Case: 8-PowerSFN
Mounting Type: Surface Mount
Operating Temperature: 150°C
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 20A (Ta)
Rds On (Max) @ Id, Vgs: 125mOhm @ 6A, 10V
Power Dissipation (Max): 150W (Tc)
Vgs(th) (Max) @ Id: 4V @ 730µA
Supplier Device Package: TOLL
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±30V
Drain to Source Voltage (Vdss): 600 V
Gate Charge (Qg) (Max) @ Vgs: 28 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 1620 pF @ 300 V
на замовлення 4000 шт:
термін постачання 21-31 дні (днів)| Кількість | Ціна |
|---|---|
| 2000+ | 84.02 грн |
| TK125U60Z1,RQ |
![]() |
Виробник: Toshiba Semiconductor and Storage
Description: N-CH MOSFET, 600 V, 0.125 @10V,
Packaging: Cut Tape (CT)
Package / Case: 8-PowerSFN
Mounting Type: Surface Mount
Operating Temperature: 150°C
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 20A (Ta)
Rds On (Max) @ Id, Vgs: 125mOhm @ 6A, 10V
Power Dissipation (Max): 150W (Tc)
Vgs(th) (Max) @ Id: 4V @ 730µA
Supplier Device Package: TOLL
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±30V
Drain to Source Voltage (Vdss): 600 V
Gate Charge (Qg) (Max) @ Vgs: 28 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 1620 pF @ 300 V
Description: N-CH MOSFET, 600 V, 0.125 @10V,
Packaging: Cut Tape (CT)
Package / Case: 8-PowerSFN
Mounting Type: Surface Mount
Operating Temperature: 150°C
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 20A (Ta)
Rds On (Max) @ Id, Vgs: 125mOhm @ 6A, 10V
Power Dissipation (Max): 150W (Tc)
Vgs(th) (Max) @ Id: 4V @ 730µA
Supplier Device Package: TOLL
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±30V
Drain to Source Voltage (Vdss): 600 V
Gate Charge (Qg) (Max) @ Vgs: 28 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 1620 pF @ 300 V
на замовлення 4000 шт:
термін постачання 21-31 дні (днів)| Кількість | Ціна |
|---|---|
| 2+ | 252.54 грн |
| 10+ | 159.08 грн |
| 100+ | 111.54 грн |
| 500+ | 92.94 грн |
| TK099U60Z1,RQ |
![]() |
Виробник: Toshiba Semiconductor and Storage
Description: N-CH MOSFET, 600 V, 0.099 @10V,
Packaging: Tape & Reel (TR)
Package / Case: 8-PowerSFN
Mounting Type: Surface Mount
Operating Temperature: 150°C
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 25A (Ta)
Rds On (Max) @ Id, Vgs: 99mOhm @ 8.1A, 10V
Power Dissipation (Max): 176W (Tc)
Vgs(th) (Max) @ Id: 4V @ 930µA
Supplier Device Package: TOLL
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±30V
Drain to Source Voltage (Vdss): 600 V
Gate Charge (Qg) (Max) @ Vgs: 36 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 2050 pF @ 300 V
Description: N-CH MOSFET, 600 V, 0.099 @10V,
Packaging: Tape & Reel (TR)
Package / Case: 8-PowerSFN
Mounting Type: Surface Mount
Operating Temperature: 150°C
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 25A (Ta)
Rds On (Max) @ Id, Vgs: 99mOhm @ 8.1A, 10V
Power Dissipation (Max): 176W (Tc)
Vgs(th) (Max) @ Id: 4V @ 930µA
Supplier Device Package: TOLL
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±30V
Drain to Source Voltage (Vdss): 600 V
Gate Charge (Qg) (Max) @ Vgs: 36 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 2050 pF @ 300 V
на замовлення 4000 шт:
термін постачання 21-31 дні (днів)| Кількість | Ціна |
|---|---|
| 2000+ | 103.31 грн |
| TK099U60Z1,RQ |
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Виробник: Toshiba Semiconductor and Storage
Description: N-CH MOSFET, 600 V, 0.099 @10V,
Packaging: Cut Tape (CT)
Package / Case: 8-PowerSFN
Mounting Type: Surface Mount
Operating Temperature: 150°C
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 25A (Ta)
Rds On (Max) @ Id, Vgs: 99mOhm @ 8.1A, 10V
Power Dissipation (Max): 176W (Tc)
Vgs(th) (Max) @ Id: 4V @ 930µA
Supplier Device Package: TOLL
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±30V
Drain to Source Voltage (Vdss): 600 V
Gate Charge (Qg) (Max) @ Vgs: 36 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 2050 pF @ 300 V
Description: N-CH MOSFET, 600 V, 0.099 @10V,
Packaging: Cut Tape (CT)
Package / Case: 8-PowerSFN
Mounting Type: Surface Mount
Operating Temperature: 150°C
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 25A (Ta)
Rds On (Max) @ Id, Vgs: 99mOhm @ 8.1A, 10V
Power Dissipation (Max): 176W (Tc)
Vgs(th) (Max) @ Id: 4V @ 930µA
Supplier Device Package: TOLL
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±30V
Drain to Source Voltage (Vdss): 600 V
Gate Charge (Qg) (Max) @ Vgs: 36 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 2050 pF @ 300 V
на замовлення 4000 шт:
термін постачання 21-31 дні (днів)| Кількість | Ціна |
|---|---|
| 2+ | 294.50 грн |
| 10+ | 187.14 грн |
| 100+ | 132.36 грн |
| 500+ | 114.28 грн |
| TK080U60Z1,RQ |
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Виробник: Toshiba Semiconductor and Storage
Description: N-CH MOSFET, 600 V, 0.08 @10V, T
Packaging: Tape & Reel (TR)
Package / Case: 8-PowerSFN
Mounting Type: Surface Mount
Operating Temperature: 150°C
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 30A (Ta)
Rds On (Max) @ Id, Vgs: 80mOhm @ 10.3A, 10V
Power Dissipation (Max): 211W (Tc)
Vgs(th) (Max) @ Id: 4V @ 1.17mA
Supplier Device Package: TOLL
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±30V
Drain to Source Voltage (Vdss): 600 V
Gate Charge (Qg) (Max) @ Vgs: 43 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 2510 pF @ 300 V
Description: N-CH MOSFET, 600 V, 0.08 @10V, T
Packaging: Tape & Reel (TR)
Package / Case: 8-PowerSFN
Mounting Type: Surface Mount
Operating Temperature: 150°C
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 30A (Ta)
Rds On (Max) @ Id, Vgs: 80mOhm @ 10.3A, 10V
Power Dissipation (Max): 211W (Tc)
Vgs(th) (Max) @ Id: 4V @ 1.17mA
Supplier Device Package: TOLL
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±30V
Drain to Source Voltage (Vdss): 600 V
Gate Charge (Qg) (Max) @ Vgs: 43 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 2510 pF @ 300 V
на замовлення 4000 шт:
термін постачання 21-31 дні (днів)| Кількість | Ціна |
|---|---|
| 2000+ | 124.14 грн |
| TK080U60Z1,RQ |
![]() |
Виробник: Toshiba Semiconductor and Storage
Description: N-CH MOSFET, 600 V, 0.08 @10V, T
Packaging: Cut Tape (CT)
Package / Case: 8-PowerSFN
Mounting Type: Surface Mount
Operating Temperature: 150°C
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 30A (Ta)
Rds On (Max) @ Id, Vgs: 80mOhm @ 10.3A, 10V
Power Dissipation (Max): 211W (Tc)
Vgs(th) (Max) @ Id: 4V @ 1.17mA
Supplier Device Package: TOLL
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±30V
Drain to Source Voltage (Vdss): 600 V
Gate Charge (Qg) (Max) @ Vgs: 43 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 2510 pF @ 300 V
Description: N-CH MOSFET, 600 V, 0.08 @10V, T
Packaging: Cut Tape (CT)
Package / Case: 8-PowerSFN
Mounting Type: Surface Mount
Operating Temperature: 150°C
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 30A (Ta)
Rds On (Max) @ Id, Vgs: 80mOhm @ 10.3A, 10V
Power Dissipation (Max): 211W (Tc)
Vgs(th) (Max) @ Id: 4V @ 1.17mA
Supplier Device Package: TOLL
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±30V
Drain to Source Voltage (Vdss): 600 V
Gate Charge (Qg) (Max) @ Vgs: 43 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 2510 pF @ 300 V
на замовлення 4000 шт:
термін постачання 21-31 дні (днів)| Кількість | Ціна |
|---|---|
| 1+ | 337.23 грн |
| 10+ | 215.95 грн |
| 100+ | 153.96 грн |
| 500+ | 137.32 грн |
| CRZ18(TE85L,Q,M) |
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Виробник: Toshiba Semiconductor and Storage
Description: DIODE ZENER 18V 700MW SFLAT
Tolerance: ±10%
Packaging: Tape & Reel (TR)
Package / Case: SOD-123F
Mounting Type: Surface Mount
Operating Temperature: -40°C ~ 150°C (TJ)
Voltage - Zener (Nom) (Vz): 18 V
Impedance (Max) (Zzt): 30 Ohms
Supplier Device Package: S-FLAT (1.6x3.5)
Power - Max: 700 mW
Voltage - Forward (Vf) (Max) @ If: 1 V @ 200 mA
Current - Reverse Leakage @ Vr: 10 µA @ 13 V
Description: DIODE ZENER 18V 700MW SFLAT
Tolerance: ±10%
Packaging: Tape & Reel (TR)
Package / Case: SOD-123F
Mounting Type: Surface Mount
Operating Temperature: -40°C ~ 150°C (TJ)
Voltage - Zener (Nom) (Vz): 18 V
Impedance (Max) (Zzt): 30 Ohms
Supplier Device Package: S-FLAT (1.6x3.5)
Power - Max: 700 mW
Voltage - Forward (Vf) (Max) @ If: 1 V @ 200 mA
Current - Reverse Leakage @ Vr: 10 µA @ 13 V
на замовлення 3000 шт:
термін постачання 21-31 дні (днів)| Кількість | Ціна |
|---|---|
| 3000+ | 11.51 грн |
| CRZ18(TE85L,Q,M) |
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Виробник: Toshiba Semiconductor and Storage
Description: DIODE ZENER 18V 700MW SFLAT
Tolerance: ±10%
Packaging: Cut Tape (CT)
Package / Case: SOD-123F
Mounting Type: Surface Mount
Operating Temperature: -40°C ~ 150°C (TJ)
Voltage - Zener (Nom) (Vz): 18 V
Impedance (Max) (Zzt): 30 Ohms
Supplier Device Package: S-FLAT (1.6x3.5)
Power - Max: 700 mW
Voltage - Forward (Vf) (Max) @ If: 1 V @ 200 mA
Current - Reverse Leakage @ Vr: 10 µA @ 13 V
Description: DIODE ZENER 18V 700MW SFLAT
Tolerance: ±10%
Packaging: Cut Tape (CT)
Package / Case: SOD-123F
Mounting Type: Surface Mount
Operating Temperature: -40°C ~ 150°C (TJ)
Voltage - Zener (Nom) (Vz): 18 V
Impedance (Max) (Zzt): 30 Ohms
Supplier Device Package: S-FLAT (1.6x3.5)
Power - Max: 700 mW
Voltage - Forward (Vf) (Max) @ If: 1 V @ 200 mA
Current - Reverse Leakage @ Vr: 10 µA @ 13 V
на замовлення 5992 шт:
термін постачання 21-31 дні (днів)| Кількість | Ціна |
|---|---|
| 7+ | 50.51 грн |
| 10+ | 30.15 грн |
| 100+ | 19.44 грн |
| 500+ | 13.91 грн |
| 1000+ | 12.51 грн |
| CRS05(TE85L,Q,M) |
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Виробник: Toshiba Semiconductor and Storage
Description: DIODE SCHOTTKY 30V 1A SFLAT
Packaging: Cut Tape (CT)
Package / Case: SOD-123F
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Technology: Schottky
Current - Average Rectified (Io): 1A
Supplier Device Package: S-FLAT (1.6x3.5)
Operating Temperature - Junction: -40°C ~ 150°C
Voltage - DC Reverse (Vr) (Max): 30 V
Voltage - Forward (Vf) (Max) @ If: 450 mV @ 1 A
Current - Reverse Leakage @ Vr: 200 µA @ 30 V
Description: DIODE SCHOTTKY 30V 1A SFLAT
Packaging: Cut Tape (CT)
Package / Case: SOD-123F
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Technology: Schottky
Current - Average Rectified (Io): 1A
Supplier Device Package: S-FLAT (1.6x3.5)
Operating Temperature - Junction: -40°C ~ 150°C
Voltage - DC Reverse (Vr) (Max): 30 V
Voltage - Forward (Vf) (Max) @ If: 450 mV @ 1 A
Current - Reverse Leakage @ Vr: 200 µA @ 30 V
на замовлення 2227 шт:
термін постачання 21-31 дні (днів)| Кількість | Ціна |
|---|---|
| 9+ | 35.74 грн |
| 13+ | 23.35 грн |
| 100+ | 15.16 грн |
| 500+ | 10.74 грн |
| 1000+ | 9.62 грн |
| TC7MBL3125CFK(EL) |
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Виробник: Toshiba Semiconductor and Storage
Description: IC BUS SWITCH 4 X 1:1 14-VSSOP
Packaging: Tape & Reel (TR)
Package / Case: 14-VFSOP (0.118", 3.00mm Width)
Mounting Type: Surface Mount
Circuit: 4 x 1:1
Type: Bus Switch
Operating Temperature: -40°C ~ 85°C
Voltage - Supply: 1.65V ~ 3.6V
Independent Circuits: 1
Voltage Supply Source: Single Supply
Supplier Device Package: 14-VSSOP
Description: IC BUS SWITCH 4 X 1:1 14-VSSOP
Packaging: Tape & Reel (TR)
Package / Case: 14-VFSOP (0.118", 3.00mm Width)
Mounting Type: Surface Mount
Circuit: 4 x 1:1
Type: Bus Switch
Operating Temperature: -40°C ~ 85°C
Voltage - Supply: 1.65V ~ 3.6V
Independent Circuits: 1
Voltage Supply Source: Single Supply
Supplier Device Package: 14-VSSOP
на замовлення 2500 шт:
термін постачання 21-31 дні (днів)| Кількість | Ціна |
|---|---|
| 2500+ | 21.00 грн |
| TC7MBL3125CFK(EL) |
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Виробник: Toshiba Semiconductor and Storage
Description: IC BUS SWITCH 4 X 1:1 14-VSSOP
Packaging: Cut Tape (CT)
Package / Case: 14-VFSOP (0.118", 3.00mm Width)
Mounting Type: Surface Mount
Circuit: 4 x 1:1
Type: Bus Switch
Operating Temperature: -40°C ~ 85°C
Voltage - Supply: 1.65V ~ 3.6V
Independent Circuits: 1
Voltage Supply Source: Single Supply
Supplier Device Package: 14-VSSOP
Description: IC BUS SWITCH 4 X 1:1 14-VSSOP
Packaging: Cut Tape (CT)
Package / Case: 14-VFSOP (0.118", 3.00mm Width)
Mounting Type: Surface Mount
Circuit: 4 x 1:1
Type: Bus Switch
Operating Temperature: -40°C ~ 85°C
Voltage - Supply: 1.65V ~ 3.6V
Independent Circuits: 1
Voltage Supply Source: Single Supply
Supplier Device Package: 14-VSSOP
на замовлення 7314 шт:
термін постачання 21-31 дні (днів)| Кількість | Ціна |
|---|---|
| 7+ | 47.40 грн |
| 10+ | 32.25 грн |
| 25+ | 29.00 грн |
| 100+ | 23.82 грн |
| 250+ | 22.20 грн |
| 500+ | 21.22 грн |
| 1000+ | 20.57 грн |
| TK20J50D(F) |
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Виробник: Toshiba Semiconductor and Storage
Description: MOSFET N-CH 500V 20A TO3P
Packaging: Tube
Package / Case: TO-3P-3, SC-65-3
Mounting Type: Through Hole
Operating Temperature: 150°C
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 20A
Rds On (Max) @ Id, Vgs: 270mOhm @ 10A, 10V
Power Dissipation (Max): 280W
Vgs(th) (Max) @ Id: 4V @ 1mA
Supplier Device Package: TO-3P(N)
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±30V
Drain to Source Voltage (Vdss): 500 V
Gate Charge (Qg) (Max) @ Vgs: 45 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 2600 pF @ 25 V
Description: MOSFET N-CH 500V 20A TO3P
Packaging: Tube
Package / Case: TO-3P-3, SC-65-3
Mounting Type: Through Hole
Operating Temperature: 150°C
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 20A
Rds On (Max) @ Id, Vgs: 270mOhm @ 10A, 10V
Power Dissipation (Max): 280W
Vgs(th) (Max) @ Id: 4V @ 1mA
Supplier Device Package: TO-3P(N)
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±30V
Drain to Source Voltage (Vdss): 500 V
Gate Charge (Qg) (Max) @ Vgs: 45 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 2600 pF @ 25 V
товару немає в наявності
В кошику
од. на суму грн.
| TCR2LN21,LF(SE |
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Виробник: Toshiba Semiconductor and Storage
Description: IC REG LINEAR 2.1V 200MA 4-SDFN
Packaging: Tape & Reel (TR)
Package / Case: 4-XFDFN Exposed Pad
Output Type: Fixed
Mounting Type: Surface Mount
Current - Output: 200mA
Operating Temperature: -40°C ~ 85°C (TJ)
Output Configuration: Positive
Current - Quiescent (Iq): 2 µA
Voltage - Input (Max): 5.5V
Number of Regulators: 1
Supplier Device Package: 4-SDFN (0.8x0.8)
Voltage - Output (Min/Fixed): 2.1V
Control Features: Enable
Voltage Dropout (Max): 0.54V @ 150mA
Protection Features: Over Current
Description: IC REG LINEAR 2.1V 200MA 4-SDFN
Packaging: Tape & Reel (TR)
Package / Case: 4-XFDFN Exposed Pad
Output Type: Fixed
Mounting Type: Surface Mount
Current - Output: 200mA
Operating Temperature: -40°C ~ 85°C (TJ)
Output Configuration: Positive
Current - Quiescent (Iq): 2 µA
Voltage - Input (Max): 5.5V
Number of Regulators: 1
Supplier Device Package: 4-SDFN (0.8x0.8)
Voltage - Output (Min/Fixed): 2.1V
Control Features: Enable
Voltage Dropout (Max): 0.54V @ 150mA
Protection Features: Over Current
товару немає в наявності
В кошику
од. на суму грн.
| TCR2LN21,LF(SE |
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Виробник: Toshiba Semiconductor and Storage
Description: IC REG LINEAR 2.1V 200MA 4-SDFN
Packaging: Cut Tape (CT)
Package / Case: 4-XFDFN Exposed Pad
Output Type: Fixed
Mounting Type: Surface Mount
Current - Output: 200mA
Operating Temperature: -40°C ~ 85°C (TJ)
Output Configuration: Positive
Current - Quiescent (Iq): 2 µA
Voltage - Input (Max): 5.5V
Number of Regulators: 1
Supplier Device Package: 4-SDFN (0.8x0.8)
Voltage - Output (Min/Fixed): 2.1V
Control Features: Enable
Voltage Dropout (Max): 0.54V @ 150mA
Protection Features: Over Current
Description: IC REG LINEAR 2.1V 200MA 4-SDFN
Packaging: Cut Tape (CT)
Package / Case: 4-XFDFN Exposed Pad
Output Type: Fixed
Mounting Type: Surface Mount
Current - Output: 200mA
Operating Temperature: -40°C ~ 85°C (TJ)
Output Configuration: Positive
Current - Quiescent (Iq): 2 µA
Voltage - Input (Max): 5.5V
Number of Regulators: 1
Supplier Device Package: 4-SDFN (0.8x0.8)
Voltage - Output (Min/Fixed): 2.1V
Control Features: Enable
Voltage Dropout (Max): 0.54V @ 150mA
Protection Features: Over Current
на замовлення 8179 шт:
термін постачання 21-31 дні (днів)| Кількість | Ціна |
|---|---|
| 27+ | 11.66 грн |
| 40+ | 7.63 грн |
| 45+ | 6.73 грн |
| 100+ | 5.38 грн |
| 250+ | 4.92 грн |
| 500+ | 4.65 грн |
| 1000+ | 4.35 грн |
| 2500+ | 4.12 грн |
| 5000+ | 3.98 грн |
| 74LVC2T45FK,LF(CT |
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Виробник: Toshiba Semiconductor and Storage
Description: IC XLTR VL BIDIR US8
Packaging: Tape & Reel (TR)
Package / Case: 8-VFSOP (0.091", 2.30mm Width)
Output Type: Tri-State
Mounting Type: Surface Mount
Operating Temperature: -40°C ~ 125°C (TA)
Supplier Device Package: US8
Channel Type: Bidirectional
Translator Type: Voltage Level
Channels per Circuit: 2
Voltage - VCCA: 1.65 V ~ 5.5 V
Voltage - VCCB: 1.65 V ~ 5.5 V
Number of Circuits: 1
Description: IC XLTR VL BIDIR US8
Packaging: Tape & Reel (TR)
Package / Case: 8-VFSOP (0.091", 2.30mm Width)
Output Type: Tri-State
Mounting Type: Surface Mount
Operating Temperature: -40°C ~ 125°C (TA)
Supplier Device Package: US8
Channel Type: Bidirectional
Translator Type: Voltage Level
Channels per Circuit: 2
Voltage - VCCA: 1.65 V ~ 5.5 V
Voltage - VCCB: 1.65 V ~ 5.5 V
Number of Circuits: 1
товару немає в наявності
В кошику
од. на суму грн.
| TB67S149FG,EL |
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Виробник: Toshiba Semiconductor and Storage
Description: IC MOTOR DRIVER UNIPOLAR 28HSSOP
Packaging: Tape & Reel (TR)
Package / Case: 28-SOP (0.295", 7.50mm Width) + 2 Heat Tabs
Mounting Type: Surface Mount
Function: Driver - Fully Integrated, Control and Power Stage
Current - Output: 3A
Interface: Parallel
Operating Temperature: -20°C ~ 85°C (TA)
Output Configuration: Half Bridge (2)
Voltage - Supply: 4.75V ~ 5.25V
Applications: General Purpose
Technology: Power MOSFET
Voltage - Load: 10V ~ 40V
Supplier Device Package: 28-HSSOP
Motor Type - Stepper: Unipolar
Step Resolution: 1 ~ 1/32
Description: IC MOTOR DRIVER UNIPOLAR 28HSSOP
Packaging: Tape & Reel (TR)
Package / Case: 28-SOP (0.295", 7.50mm Width) + 2 Heat Tabs
Mounting Type: Surface Mount
Function: Driver - Fully Integrated, Control and Power Stage
Current - Output: 3A
Interface: Parallel
Operating Temperature: -20°C ~ 85°C (TA)
Output Configuration: Half Bridge (2)
Voltage - Supply: 4.75V ~ 5.25V
Applications: General Purpose
Technology: Power MOSFET
Voltage - Load: 10V ~ 40V
Supplier Device Package: 28-HSSOP
Motor Type - Stepper: Unipolar
Step Resolution: 1 ~ 1/32
на замовлення 2000 шт:
термін постачання 21-31 дні (днів)| Кількість | Ціна |
|---|---|
| 1000+ | 127.85 грн |
| 2000+ | 120.16 грн |
| TB67S149FG,EL |
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Виробник: Toshiba Semiconductor and Storage
Description: IC MOTOR DRIVER UNIPOLAR 28HSSOP
Packaging: Cut Tape (CT)
Package / Case: 28-SOP (0.295", 7.50mm Width) + 2 Heat Tabs
Mounting Type: Surface Mount
Function: Driver - Fully Integrated, Control and Power Stage
Current - Output: 3A
Interface: Parallel
Operating Temperature: -20°C ~ 85°C (TA)
Output Configuration: Half Bridge (2)
Voltage - Supply: 4.75V ~ 5.25V
Applications: General Purpose
Technology: Power MOSFET
Voltage - Load: 10V ~ 40V
Supplier Device Package: 28-HSSOP
Motor Type - Stepper: Unipolar
Step Resolution: 1 ~ 1/32
Description: IC MOTOR DRIVER UNIPOLAR 28HSSOP
Packaging: Cut Tape (CT)
Package / Case: 28-SOP (0.295", 7.50mm Width) + 2 Heat Tabs
Mounting Type: Surface Mount
Function: Driver - Fully Integrated, Control and Power Stage
Current - Output: 3A
Interface: Parallel
Operating Temperature: -20°C ~ 85°C (TA)
Output Configuration: Half Bridge (2)
Voltage - Supply: 4.75V ~ 5.25V
Applications: General Purpose
Technology: Power MOSFET
Voltage - Load: 10V ~ 40V
Supplier Device Package: 28-HSSOP
Motor Type - Stepper: Unipolar
Step Resolution: 1 ~ 1/32
на замовлення 3362 шт:
термін постачання 21-31 дні (днів)| Кількість | Ціна |
|---|---|
| 2+ | 230.78 грн |
| 10+ | 167.24 грн |
| 25+ | 153.45 грн |
| 100+ | 129.78 грн |
| 250+ | 122.99 грн |
| 500+ | 118.90 грн |
| TB67S209FTG,EL |
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Виробник: Toshiba Semiconductor and Storage
Description: STEPPER MOTOR DRIVER IC, 50V/4.0
Packaging: Tape & Reel (TR)
Package / Case: 48-WFQFN Exposed Pad
Mounting Type: Surface Mount
Function: Driver - Fully Integrated, Control and Power Stage
Current - Output: 3A
Interface: Parallel
Operating Temperature: -20°C ~ 85°C
Output Configuration: Half Bridge (4)
Voltage - Supply: 4.75V ~ 5.25V
Applications: General Purpose
Technology: NMOS, PMOS
Voltage - Load: 10V ~ 47V
Supplier Device Package: 48-WQFN (7x7)
Motor Type - Stepper: Bipolar
Motor Type - AC, DC: Brushed DC
Step Resolution: 1, 1/2, 1/4, 1/8, 1/16, 1/32
Description: STEPPER MOTOR DRIVER IC, 50V/4.0
Packaging: Tape & Reel (TR)
Package / Case: 48-WFQFN Exposed Pad
Mounting Type: Surface Mount
Function: Driver - Fully Integrated, Control and Power Stage
Current - Output: 3A
Interface: Parallel
Operating Temperature: -20°C ~ 85°C
Output Configuration: Half Bridge (4)
Voltage - Supply: 4.75V ~ 5.25V
Applications: General Purpose
Technology: NMOS, PMOS
Voltage - Load: 10V ~ 47V
Supplier Device Package: 48-WQFN (7x7)
Motor Type - Stepper: Bipolar
Motor Type - AC, DC: Brushed DC
Step Resolution: 1, 1/2, 1/4, 1/8, 1/16, 1/32
на замовлення 4000 шт:
термін постачання 21-31 дні (днів)| Кількість | Ціна |
|---|---|
| 4000+ | 110.26 грн |
| TB67S209FTG,EL |
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Виробник: Toshiba Semiconductor and Storage
Description: STEPPER MOTOR DRIVER IC, 50V/4.0
Packaging: Cut Tape (CT)
Package / Case: 48-WFQFN Exposed Pad
Mounting Type: Surface Mount
Function: Driver - Fully Integrated, Control and Power Stage
Current - Output: 3A
Interface: Parallel
Operating Temperature: -20°C ~ 85°C
Output Configuration: Half Bridge (4)
Voltage - Supply: 4.75V ~ 5.25V
Applications: General Purpose
Technology: NMOS, PMOS
Voltage - Load: 10V ~ 47V
Supplier Device Package: 48-WQFN (7x7)
Motor Type - Stepper: Bipolar
Motor Type - AC, DC: Brushed DC
Step Resolution: 1, 1/2, 1/4, 1/8, 1/16, 1/32
Description: STEPPER MOTOR DRIVER IC, 50V/4.0
Packaging: Cut Tape (CT)
Package / Case: 48-WFQFN Exposed Pad
Mounting Type: Surface Mount
Function: Driver - Fully Integrated, Control and Power Stage
Current - Output: 3A
Interface: Parallel
Operating Temperature: -20°C ~ 85°C
Output Configuration: Half Bridge (4)
Voltage - Supply: 4.75V ~ 5.25V
Applications: General Purpose
Technology: NMOS, PMOS
Voltage - Load: 10V ~ 47V
Supplier Device Package: 48-WQFN (7x7)
Motor Type - Stepper: Bipolar
Motor Type - AC, DC: Brushed DC
Step Resolution: 1, 1/2, 1/4, 1/8, 1/16, 1/32
на замовлення 4000 шт:
термін постачання 21-31 дні (днів)| Кількість | Ціна |
|---|---|
| 2+ | 209.80 грн |
| 10+ | 151.67 грн |
| 25+ | 139.03 грн |
| 100+ | 117.37 грн |
| 250+ | 111.14 грн |
| 500+ | 107.38 грн |
| 1000+ | 102.57 грн |
| TB67S579FTG(O,EL) |
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Виробник: Toshiba Semiconductor and Storage
Description: 2.0A/40V STEPPING MOTOR DRIVER I
Packaging: Tape & Reel (TR)
Package / Case: 48-VFQFN Exposed Pad
Mounting Type: Surface Mount, Wettable Flank
Function: Driver - Fully Integrated, Control and Power Stage
Interface: PWM
Operating Temperature: -40°C ~ 85°C
Output Configuration: Half Bridge (4)
Voltage - Supply: 2V ~ 5.5V
Applications: General Purpose
Technology: DMOS
Voltage - Load: 4.5V ~ 34V
Supplier Device Package: 48-VQFN (7x7)
Motor Type - Stepper: Bipolar
Motor Type - AC, DC: Brushless DC (BLDC)
Step Resolution: 1, 1/2, 1/4, 1/8, 1/16, 1/32
Description: 2.0A/40V STEPPING MOTOR DRIVER I
Packaging: Tape & Reel (TR)
Package / Case: 48-VFQFN Exposed Pad
Mounting Type: Surface Mount, Wettable Flank
Function: Driver - Fully Integrated, Control and Power Stage
Interface: PWM
Operating Temperature: -40°C ~ 85°C
Output Configuration: Half Bridge (4)
Voltage - Supply: 2V ~ 5.5V
Applications: General Purpose
Technology: DMOS
Voltage - Load: 4.5V ~ 34V
Supplier Device Package: 48-VQFN (7x7)
Motor Type - Stepper: Bipolar
Motor Type - AC, DC: Brushless DC (BLDC)
Step Resolution: 1, 1/2, 1/4, 1/8, 1/16, 1/32
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| TB67S579FTG(O,EL) |
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Виробник: Toshiba Semiconductor and Storage
Description: 2.0A/40V STEPPING MOTOR DRIVER I
Packaging: Cut Tape (CT)
Package / Case: 48-VFQFN Exposed Pad
Mounting Type: Surface Mount, Wettable Flank
Function: Driver - Fully Integrated, Control and Power Stage
Interface: PWM
Operating Temperature: -40°C ~ 85°C
Output Configuration: Half Bridge (4)
Voltage - Supply: 2V ~ 5.5V
Applications: General Purpose
Technology: DMOS
Voltage - Load: 4.5V ~ 34V
Supplier Device Package: 48-VQFN (7x7)
Motor Type - Stepper: Bipolar
Motor Type - AC, DC: Brushless DC (BLDC)
Step Resolution: 1, 1/2, 1/4, 1/8, 1/16, 1/32
Description: 2.0A/40V STEPPING MOTOR DRIVER I
Packaging: Cut Tape (CT)
Package / Case: 48-VFQFN Exposed Pad
Mounting Type: Surface Mount, Wettable Flank
Function: Driver - Fully Integrated, Control and Power Stage
Interface: PWM
Operating Temperature: -40°C ~ 85°C
Output Configuration: Half Bridge (4)
Voltage - Supply: 2V ~ 5.5V
Applications: General Purpose
Technology: DMOS
Voltage - Load: 4.5V ~ 34V
Supplier Device Package: 48-VQFN (7x7)
Motor Type - Stepper: Bipolar
Motor Type - AC, DC: Brushless DC (BLDC)
Step Resolution: 1, 1/2, 1/4, 1/8, 1/16, 1/32
на замовлення 3427 шт:
термін постачання 21-31 дні (днів)| Кількість | Ціна |
|---|---|
| 3+ | 148.41 грн |
| 10+ | 105.80 грн |
| 25+ | 96.52 грн |
| 100+ | 80.95 грн |
| 250+ | 76.36 грн |
| 500+ | 73.97 грн |
| TB67S559FTG(O,EL) |
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Виробник: Toshiba Semiconductor and Storage
Description: STEPPER MOTOR DRIVER IC, 50V/3.0
Packaging: Tape & Reel (TR)
Package / Case: 32-VFQFN Exposed Pad
Mounting Type: Surface Mount
Function: Driver - Fully Integrated, Control and Power Stage
Current - Output: 3A
Interface: Parallel, PWM
Operating Temperature: -40°C ~ 85°C
Output Configuration: Half Bridge (4)
Voltage - Supply: 8.2V ~ 44V
Applications: General Purpose
Technology: DMOS
Voltage - Load: 8.2V ~ 44V
Supplier Device Package: 32-VQFN (5x5)
Motor Type - Stepper: Bipolar
Motor Type - AC, DC: Brushless DC (BLDC)
Step Resolution: 1, 1/2, 1/4, 1/8, 1/16, 1/32
Description: STEPPER MOTOR DRIVER IC, 50V/3.0
Packaging: Tape & Reel (TR)
Package / Case: 32-VFQFN Exposed Pad
Mounting Type: Surface Mount
Function: Driver - Fully Integrated, Control and Power Stage
Current - Output: 3A
Interface: Parallel, PWM
Operating Temperature: -40°C ~ 85°C
Output Configuration: Half Bridge (4)
Voltage - Supply: 8.2V ~ 44V
Applications: General Purpose
Technology: DMOS
Voltage - Load: 8.2V ~ 44V
Supplier Device Package: 32-VQFN (5x5)
Motor Type - Stepper: Bipolar
Motor Type - AC, DC: Brushless DC (BLDC)
Step Resolution: 1, 1/2, 1/4, 1/8, 1/16, 1/32
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| TB67S559FTG(O,EL) |
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Виробник: Toshiba Semiconductor and Storage
Description: STEPPER MOTOR DRIVER IC, 50V/3.0
Packaging: Cut Tape (CT)
Package / Case: 32-VFQFN Exposed Pad
Mounting Type: Surface Mount
Function: Driver - Fully Integrated, Control and Power Stage
Current - Output: 3A
Interface: Parallel, PWM
Operating Temperature: -40°C ~ 85°C
Output Configuration: Half Bridge (4)
Voltage - Supply: 8.2V ~ 44V
Applications: General Purpose
Technology: DMOS
Voltage - Load: 8.2V ~ 44V
Supplier Device Package: 32-VQFN (5x5)
Motor Type - Stepper: Bipolar
Motor Type - AC, DC: Brushless DC (BLDC)
Step Resolution: 1, 1/2, 1/4, 1/8, 1/16, 1/32
Description: STEPPER MOTOR DRIVER IC, 50V/3.0
Packaging: Cut Tape (CT)
Package / Case: 32-VFQFN Exposed Pad
Mounting Type: Surface Mount
Function: Driver - Fully Integrated, Control and Power Stage
Current - Output: 3A
Interface: Parallel, PWM
Operating Temperature: -40°C ~ 85°C
Output Configuration: Half Bridge (4)
Voltage - Supply: 8.2V ~ 44V
Applications: General Purpose
Technology: DMOS
Voltage - Load: 8.2V ~ 44V
Supplier Device Package: 32-VQFN (5x5)
Motor Type - Stepper: Bipolar
Motor Type - AC, DC: Brushless DC (BLDC)
Step Resolution: 1, 1/2, 1/4, 1/8, 1/16, 1/32
на замовлення 3494 шт:
термін постачання 21-31 дні (днів)| Кількість | Ціна |
|---|---|
| 2+ | 164.73 грн |
| 10+ | 117.55 грн |
| 25+ | 107.45 грн |
| 100+ | 90.34 грн |
| 250+ | 85.33 грн |
| 500+ | 82.32 грн |
| 1000+ | 78.53 грн |
| CUZ75V,H3F |
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Виробник: Toshiba Semiconductor and Storage
Description: 75 V ZENER DIODE, SOD-323 SOD-32
Packaging: Tape & Reel (TR)
Package / Case: SC-76, SOD-323
Mounting Type: Surface Mount
Type: Zener
Operating Temperature: 150°C (TJ)
Applications: General Purpose
Capacitance @ Frequency: 24pF @ 1MHz
Current - Peak Pulse (10/1000µs): 5A (8/20µs)
Voltage - Reverse Standoff (Typ): 66V (Max)
Supplier Device Package: USC
Unidirectional Channels: 1
Voltage - Breakdown (Min): 70V
Voltage - Clamping (Max) @ Ipp: 112V
Power - Peak Pulse: 620W
Power Line Protection: No
Description: 75 V ZENER DIODE, SOD-323 SOD-32
Packaging: Tape & Reel (TR)
Package / Case: SC-76, SOD-323
Mounting Type: Surface Mount
Type: Zener
Operating Temperature: 150°C (TJ)
Applications: General Purpose
Capacitance @ Frequency: 24pF @ 1MHz
Current - Peak Pulse (10/1000µs): 5A (8/20µs)
Voltage - Reverse Standoff (Typ): 66V (Max)
Supplier Device Package: USC
Unidirectional Channels: 1
Voltage - Breakdown (Min): 70V
Voltage - Clamping (Max) @ Ipp: 112V
Power - Peak Pulse: 620W
Power Line Protection: No
на замовлення 3000 шт:
термін постачання 21-31 дні (днів)| Кількість | Ціна |
|---|---|
| 3000+ | 1.98 грн |
| CUZ75V,H3F |
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Виробник: Toshiba Semiconductor and Storage
Description: 75 V ZENER DIODE, SOD-323 SOD-32
Packaging: Cut Tape (CT)
Package / Case: SC-76, SOD-323
Mounting Type: Surface Mount
Type: Zener
Operating Temperature: 150°C (TJ)
Applications: General Purpose
Capacitance @ Frequency: 24pF @ 1MHz
Current - Peak Pulse (10/1000µs): 5A (8/20µs)
Voltage - Reverse Standoff (Typ): 66V (Max)
Supplier Device Package: USC
Unidirectional Channels: 1
Voltage - Breakdown (Min): 70V
Voltage - Clamping (Max) @ Ipp: 112V
Power - Peak Pulse: 620W
Power Line Protection: No
Description: 75 V ZENER DIODE, SOD-323 SOD-32
Packaging: Cut Tape (CT)
Package / Case: SC-76, SOD-323
Mounting Type: Surface Mount
Type: Zener
Operating Temperature: 150°C (TJ)
Applications: General Purpose
Capacitance @ Frequency: 24pF @ 1MHz
Current - Peak Pulse (10/1000µs): 5A (8/20µs)
Voltage - Reverse Standoff (Typ): 66V (Max)
Supplier Device Package: USC
Unidirectional Channels: 1
Voltage - Breakdown (Min): 70V
Voltage - Clamping (Max) @ Ipp: 112V
Power - Peak Pulse: 620W
Power Line Protection: No
на замовлення 3000 шт:
термін постачання 21-31 дні (днів)| Кількість | Ціна |
|---|---|
| 45+ | 6.99 грн |
| 86+ | 3.52 грн |
| 99+ | 3.05 грн |
| 117+ | 2.40 грн |
| 250+ | 2.17 грн |
| 500+ | 2.04 грн |
| 1000+ | 1.89 грн |
| TBD62503APG |
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Виробник: Toshiba Semiconductor and Storage
Description: IC PWR SWITCH N-CHAN 1:1 16DIP
Packaging: Tube
Package / Case: 16-DIP (0.300", 7.62mm)
Output Type: N-Channel
Mounting Type: Through Hole
Number of Outputs: 7
Interface: On/Off
Switch Type: General Purpose
Operating Temperature: -40°C ~ 85°C (TA)
Output Configuration: Low Side
Input Type: Inverting
Voltage - Load: 50V (Max)
Voltage - Supply (Vcc/Vdd): Not Required
Current - Output (Max): 300mA
Ratio - Input:Output: 1:1
Supplier Device Package: 16-DIP
Description: IC PWR SWITCH N-CHAN 1:1 16DIP
Packaging: Tube
Package / Case: 16-DIP (0.300", 7.62mm)
Output Type: N-Channel
Mounting Type: Through Hole
Number of Outputs: 7
Interface: On/Off
Switch Type: General Purpose
Operating Temperature: -40°C ~ 85°C (TA)
Output Configuration: Low Side
Input Type: Inverting
Voltage - Load: 50V (Max)
Voltage - Supply (Vcc/Vdd): Not Required
Current - Output (Max): 300mA
Ratio - Input:Output: 1:1
Supplier Device Package: 16-DIP
на замовлення 1803 шт:
термін постачання 21-31 дні (днів)| Кількість | Ціна |
|---|---|
| 3+ | 131.32 грн |
| 10+ | 93.61 грн |
| 25+ | 85.24 грн |
| 100+ | 71.37 грн |
| 250+ | 67.26 грн |
| 500+ | 64.79 грн |
| 1000+ | 61.72 грн |
| TC358748XBG(EL) |
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Виробник: Toshiba Semiconductor and Storage
Description: IC INTFACE SPECIALIZED 80VFBGA
Packaging: Tape & Reel (TR)
Package / Case: 80-VFBGA
Mounting Type: Surface Mount
Interface: SPI
Voltage - Supply: 1.8V ~ 3.3V
Applications: Camera
Supplier Device Package: 80-VFBGA (7x7)
Description: IC INTFACE SPECIALIZED 80VFBGA
Packaging: Tape & Reel (TR)
Package / Case: 80-VFBGA
Mounting Type: Surface Mount
Interface: SPI
Voltage - Supply: 1.8V ~ 3.3V
Applications: Camera
Supplier Device Package: 80-VFBGA (7x7)
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| TC358748XBG(EL) |
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Виробник: Toshiba Semiconductor and Storage
Description: IC INTFACE SPECIALIZED 80VFBGA
Packaging: Cut Tape (CT)
Package / Case: 80-VFBGA
Mounting Type: Surface Mount
Interface: SPI
Voltage - Supply: 1.8V ~ 3.3V
Applications: Camera
Supplier Device Package: 80-VFBGA (7x7)
Description: IC INTFACE SPECIALIZED 80VFBGA
Packaging: Cut Tape (CT)
Package / Case: 80-VFBGA
Mounting Type: Surface Mount
Interface: SPI
Voltage - Supply: 1.8V ~ 3.3V
Applications: Camera
Supplier Device Package: 80-VFBGA (7x7)
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В кошику
од. на суму грн.
| HN1A01FU-GR,LXHF |
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Виробник: Toshiba Semiconductor and Storage
Description: PNP + PNP BIPOLAR TRANSISTOR, -5
Packaging: Tape & Reel (TR)
Package / Case: 6-TSSOP, SC-88, SOT-363
Mounting Type: Surface Mount
Transistor Type: 2 PNP
Power - Max: 200mW
Current - Collector (Ic) (Max): 150mA
Voltage - Collector Emitter Breakdown (Max): 50V
Vce Saturation (Max) @ Ib, Ic: 300mV @ 10mA, 100mA
Current - Collector Cutoff (Max): 100nA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce: 200 @ 2mA, 6V
Frequency - Transition: 80MHz
Supplier Device Package: US6
Grade: Automotive
Qualification: AEC-Q101
Description: PNP + PNP BIPOLAR TRANSISTOR, -5
Packaging: Tape & Reel (TR)
Package / Case: 6-TSSOP, SC-88, SOT-363
Mounting Type: Surface Mount
Transistor Type: 2 PNP
Power - Max: 200mW
Current - Collector (Ic) (Max): 150mA
Voltage - Collector Emitter Breakdown (Max): 50V
Vce Saturation (Max) @ Ib, Ic: 300mV @ 10mA, 100mA
Current - Collector Cutoff (Max): 100nA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce: 200 @ 2mA, 6V
Frequency - Transition: 80MHz
Supplier Device Package: US6
Grade: Automotive
Qualification: AEC-Q101
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од. на суму грн.
| SSM5P15FU,LF |
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Виробник: Toshiba Semiconductor and Storage
Description: MOSFET 2P-CH 30V 0.1A USV
Packaging: Tape & Reel (TR)
Package / Case: 5-TSSOP, SC-70-5, SOT-353
Mounting Type: Surface Mount
Configuration: 2 P-Channel (Dual)
Operating Temperature: 150°C
Technology: MOSFET (Metal Oxide)
Power - Max: 200mW (Ta)
Drain to Source Voltage (Vdss): 30V
Current - Continuous Drain (Id) @ 25°C: 100mA (Ta)
Input Capacitance (Ciss) (Max) @ Vds: 9.1pF @ 3V
Rds On (Max) @ Id, Vgs: 12Ohm @ 10mA, 4V
Vgs(th) (Max) @ Id: 1.7V @ 100µA
Supplier Device Package: USV
Description: MOSFET 2P-CH 30V 0.1A USV
Packaging: Tape & Reel (TR)
Package / Case: 5-TSSOP, SC-70-5, SOT-353
Mounting Type: Surface Mount
Configuration: 2 P-Channel (Dual)
Operating Temperature: 150°C
Technology: MOSFET (Metal Oxide)
Power - Max: 200mW (Ta)
Drain to Source Voltage (Vdss): 30V
Current - Continuous Drain (Id) @ 25°C: 100mA (Ta)
Input Capacitance (Ciss) (Max) @ Vds: 9.1pF @ 3V
Rds On (Max) @ Id, Vgs: 12Ohm @ 10mA, 4V
Vgs(th) (Max) @ Id: 1.7V @ 100µA
Supplier Device Package: USV
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од. на суму грн.
| SSM5P15FU,LF |
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Виробник: Toshiba Semiconductor and Storage
Description: MOSFET 2P-CH 30V 0.1A USV
Packaging: Cut Tape (CT)
Package / Case: 5-TSSOP, SC-70-5, SOT-353
Mounting Type: Surface Mount
Configuration: 2 P-Channel (Dual)
Operating Temperature: 150°C
Technology: MOSFET (Metal Oxide)
Power - Max: 200mW (Ta)
Drain to Source Voltage (Vdss): 30V
Current - Continuous Drain (Id) @ 25°C: 100mA (Ta)
Input Capacitance (Ciss) (Max) @ Vds: 9.1pF @ 3V
Rds On (Max) @ Id, Vgs: 12Ohm @ 10mA, 4V
Vgs(th) (Max) @ Id: 1.7V @ 100µA
Supplier Device Package: USV
Description: MOSFET 2P-CH 30V 0.1A USV
Packaging: Cut Tape (CT)
Package / Case: 5-TSSOP, SC-70-5, SOT-353
Mounting Type: Surface Mount
Configuration: 2 P-Channel (Dual)
Operating Temperature: 150°C
Technology: MOSFET (Metal Oxide)
Power - Max: 200mW (Ta)
Drain to Source Voltage (Vdss): 30V
Current - Continuous Drain (Id) @ 25°C: 100mA (Ta)
Input Capacitance (Ciss) (Max) @ Vds: 9.1pF @ 3V
Rds On (Max) @ Id, Vgs: 12Ohm @ 10mA, 4V
Vgs(th) (Max) @ Id: 1.7V @ 100µA
Supplier Device Package: USV
на замовлення 2956 шт:
термін постачання 21-31 дні (днів)| Кількість | Ціна |
|---|---|
| 13+ | 24.87 грн |
| 21+ | 14.74 грн |
| 100+ | 9.24 грн |
| 500+ | 6.44 грн |
| 1000+ | 5.72 грн |
| RN2701,LF |
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Виробник: Toshiba Semiconductor and Storage
Description: TRANS PREBIAS 2PNP 50V 100MA USV
Packaging: Tape & Reel (TR)
Package / Case: 5-TSSOP, SC-70-5, SOT-353
Mounting Type: Surface Mount
Transistor Type: 2 PNP - Pre-Biased (Dual)
Power - Max: 200mW
Current - Collector (Ic) (Max): 100mA
Voltage - Collector Emitter Breakdown (Max): 50V
Vce Saturation (Max) @ Ib, Ic: 300mV @ 250µA, 5mA
Current - Collector Cutoff (Max): 500nA
DC Current Gain (hFE) (Min) @ Ic, Vce: 30 @ 10mA, 5V
Frequency - Transition: 200MHz
Resistor - Base (R1): 4.7kOhms
Resistor - Emitter Base (R2): 4.7kOhms
Supplier Device Package: USV
Description: TRANS PREBIAS 2PNP 50V 100MA USV
Packaging: Tape & Reel (TR)
Package / Case: 5-TSSOP, SC-70-5, SOT-353
Mounting Type: Surface Mount
Transistor Type: 2 PNP - Pre-Biased (Dual)
Power - Max: 200mW
Current - Collector (Ic) (Max): 100mA
Voltage - Collector Emitter Breakdown (Max): 50V
Vce Saturation (Max) @ Ib, Ic: 300mV @ 250µA, 5mA
Current - Collector Cutoff (Max): 500nA
DC Current Gain (hFE) (Min) @ Ic, Vce: 30 @ 10mA, 5V
Frequency - Transition: 200MHz
Resistor - Base (R1): 4.7kOhms
Resistor - Emitter Base (R2): 4.7kOhms
Supplier Device Package: USV
на замовлення 6000 шт:
термін постачання 21-31 дні (днів)| Кількість | Ціна |
|---|---|
| 3000+ | 3.22 грн |
| 6000+ | 2.78 грн |
| RN2701,LF |
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Виробник: Toshiba Semiconductor and Storage
Description: TRANS PREBIAS 2PNP 50V 100MA USV
Packaging: Cut Tape (CT)
Package / Case: 5-TSSOP, SC-70-5, SOT-353
Mounting Type: Surface Mount
Transistor Type: 2 PNP - Pre-Biased (Dual)
Power - Max: 200mW
Current - Collector (Ic) (Max): 100mA
Voltage - Collector Emitter Breakdown (Max): 50V
Vce Saturation (Max) @ Ib, Ic: 300mV @ 250µA, 5mA
Current - Collector Cutoff (Max): 500nA
DC Current Gain (hFE) (Min) @ Ic, Vce: 30 @ 10mA, 5V
Frequency - Transition: 200MHz
Resistor - Base (R1): 4.7kOhms
Resistor - Emitter Base (R2): 4.7kOhms
Supplier Device Package: USV
Description: TRANS PREBIAS 2PNP 50V 100MA USV
Packaging: Cut Tape (CT)
Package / Case: 5-TSSOP, SC-70-5, SOT-353
Mounting Type: Surface Mount
Transistor Type: 2 PNP - Pre-Biased (Dual)
Power - Max: 200mW
Current - Collector (Ic) (Max): 100mA
Voltage - Collector Emitter Breakdown (Max): 50V
Vce Saturation (Max) @ Ib, Ic: 300mV @ 250µA, 5mA
Current - Collector Cutoff (Max): 500nA
DC Current Gain (hFE) (Min) @ Ic, Vce: 30 @ 10mA, 5V
Frequency - Transition: 200MHz
Resistor - Base (R1): 4.7kOhms
Resistor - Emitter Base (R2): 4.7kOhms
Supplier Device Package: USV
на замовлення 8938 шт:
термін постачання 21-31 дні (днів)| Кількість | Ціна |
|---|---|
| 20+ | 16.32 грн |
| 32+ | 9.58 грн |
| 100+ | 5.95 грн |
| 500+ | 4.10 грн |
| 1000+ | 3.61 грн |
| DF2B6USL,L3F |
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Виробник: Toshiba Semiconductor and Storage
Description: TVS DIODE 5.5VWM 20VC SL2
Packaging: Tape & Reel (TR)
Package / Case: 2-SMD, No Lead
Mounting Type: Surface Mount
Type: Zener
Operating Temperature: 150°C (TJ)
Capacitance @ Frequency: 1.5pF @ 1MHz
Current - Peak Pulse (10/1000µs): 1.5A (8/20µs)
Voltage - Reverse Standoff (Typ): 5.5V (Max)
Supplier Device Package: SL2
Bidirectional Channels: 1
Voltage - Breakdown (Min): 5.7V
Voltage - Clamping (Max) @ Ipp: 20V
Power - Peak Pulse: 30W
Power Line Protection: No
Description: TVS DIODE 5.5VWM 20VC SL2
Packaging: Tape & Reel (TR)
Package / Case: 2-SMD, No Lead
Mounting Type: Surface Mount
Type: Zener
Operating Temperature: 150°C (TJ)
Capacitance @ Frequency: 1.5pF @ 1MHz
Current - Peak Pulse (10/1000µs): 1.5A (8/20µs)
Voltage - Reverse Standoff (Typ): 5.5V (Max)
Supplier Device Package: SL2
Bidirectional Channels: 1
Voltage - Breakdown (Min): 5.7V
Voltage - Clamping (Max) @ Ipp: 20V
Power - Peak Pulse: 30W
Power Line Protection: No
товару немає в наявності
В кошику
од. на суму грн.
| DF2B6USL,L3F |
![]() |
Виробник: Toshiba Semiconductor and Storage
Description: TVS DIODE 5.5VWM 20VC SL2
Packaging: Cut Tape (CT)
Package / Case: 2-SMD, No Lead
Mounting Type: Surface Mount
Type: Zener
Operating Temperature: 150°C (TJ)
Capacitance @ Frequency: 1.5pF @ 1MHz
Current - Peak Pulse (10/1000µs): 1.5A (8/20µs)
Voltage - Reverse Standoff (Typ): 5.5V (Max)
Supplier Device Package: SL2
Bidirectional Channels: 1
Voltage - Breakdown (Min): 5.7V
Voltage - Clamping (Max) @ Ipp: 20V
Power - Peak Pulse: 30W
Power Line Protection: No
Description: TVS DIODE 5.5VWM 20VC SL2
Packaging: Cut Tape (CT)
Package / Case: 2-SMD, No Lead
Mounting Type: Surface Mount
Type: Zener
Operating Temperature: 150°C (TJ)
Capacitance @ Frequency: 1.5pF @ 1MHz
Current - Peak Pulse (10/1000µs): 1.5A (8/20µs)
Voltage - Reverse Standoff (Typ): 5.5V (Max)
Supplier Device Package: SL2
Bidirectional Channels: 1
Voltage - Breakdown (Min): 5.7V
Voltage - Clamping (Max) @ Ipp: 20V
Power - Peak Pulse: 30W
Power Line Protection: No
на замовлення 492 шт:
термін постачання 21-31 дні (днів)| Кількість | Ціна |
|---|---|
| 18+ | 17.87 грн |
| 29+ | 10.48 грн |
| 100+ | 6.54 грн |
| DF2S6M5SL,L3F |
![]() |
Виробник: Toshiba Semiconductor and Storage
Description: TVS DIODE 5VWM 17VC SL2
Packaging: Tape & Reel (TR)
Package / Case: 2-SMD, No Lead
Mounting Type: Surface Mount
Type: Zener
Operating Temperature: 150°C (TJ)
Applications: General Purpose
Capacitance @ Frequency: 0.6pF @ 1MHz
Current - Peak Pulse (10/1000µs): 2.5A (8/20µs)
Voltage - Reverse Standoff (Typ): 5V (Max)
Supplier Device Package: SL2
Unidirectional Channels: 1
Voltage - Breakdown (Min): 5.5V
Voltage - Clamping (Max) @ Ipp: 17V (Typ)
Power - Peak Pulse: 37W
Power Line Protection: No
Description: TVS DIODE 5VWM 17VC SL2
Packaging: Tape & Reel (TR)
Package / Case: 2-SMD, No Lead
Mounting Type: Surface Mount
Type: Zener
Operating Temperature: 150°C (TJ)
Applications: General Purpose
Capacitance @ Frequency: 0.6pF @ 1MHz
Current - Peak Pulse (10/1000µs): 2.5A (8/20µs)
Voltage - Reverse Standoff (Typ): 5V (Max)
Supplier Device Package: SL2
Unidirectional Channels: 1
Voltage - Breakdown (Min): 5.5V
Voltage - Clamping (Max) @ Ipp: 17V (Typ)
Power - Peak Pulse: 37W
Power Line Protection: No
товару немає в наявності
В кошику
од. на суму грн.
| DF2S6M5SL,L3F |
![]() |
Виробник: Toshiba Semiconductor and Storage
Description: TVS DIODE 5VWM 17VC SL2
Packaging: Cut Tape (CT)
Package / Case: 2-SMD, No Lead
Mounting Type: Surface Mount
Type: Zener
Operating Temperature: 150°C (TJ)
Applications: General Purpose
Capacitance @ Frequency: 0.6pF @ 1MHz
Current - Peak Pulse (10/1000µs): 2.5A (8/20µs)
Voltage - Reverse Standoff (Typ): 5V (Max)
Supplier Device Package: SL2
Unidirectional Channels: 1
Voltage - Breakdown (Min): 5.5V
Voltage - Clamping (Max) @ Ipp: 17V (Typ)
Power - Peak Pulse: 37W
Power Line Protection: No
Description: TVS DIODE 5VWM 17VC SL2
Packaging: Cut Tape (CT)
Package / Case: 2-SMD, No Lead
Mounting Type: Surface Mount
Type: Zener
Operating Temperature: 150°C (TJ)
Applications: General Purpose
Capacitance @ Frequency: 0.6pF @ 1MHz
Current - Peak Pulse (10/1000µs): 2.5A (8/20µs)
Voltage - Reverse Standoff (Typ): 5V (Max)
Supplier Device Package: SL2
Unidirectional Channels: 1
Voltage - Breakdown (Min): 5.5V
Voltage - Clamping (Max) @ Ipp: 17V (Typ)
Power - Peak Pulse: 37W
Power Line Protection: No
на замовлення 9249 шт:
термін постачання 21-31 дні (днів)| Кількість | Ціна |
|---|---|
| 18+ | 17.87 грн |
| 29+ | 10.48 грн |
| 100+ | 6.54 грн |
| 500+ | 4.50 грн |
| 1000+ | 3.97 грн |
| 2000+ | 3.53 грн |
| 5000+ | 2.99 грн |
| DF2S30ASL,L3F |
![]() |
Виробник: Toshiba Semiconductor and Storage
Description: TVS DIODE 23VWM 58VC SL2
Packaging: Tape & Reel (TR)
Package / Case: 2-SMD, No Lead
Mounting Type: Surface Mount
Type: Zener
Operating Temperature: 150°C (TJ)
Applications: General Purpose
Capacitance @ Frequency: 7.5pF @ 1MHz
Current - Peak Pulse (10/1000µs): 2.5A (8/20µs)
Voltage - Reverse Standoff (Typ): 23V (Max)
Supplier Device Package: SL2
Unidirectional Channels: 1
Voltage - Breakdown (Min): 28V
Voltage - Clamping (Max) @ Ipp: 58V
Power - Peak Pulse: 145W
Power Line Protection: No
Description: TVS DIODE 23VWM 58VC SL2
Packaging: Tape & Reel (TR)
Package / Case: 2-SMD, No Lead
Mounting Type: Surface Mount
Type: Zener
Operating Temperature: 150°C (TJ)
Applications: General Purpose
Capacitance @ Frequency: 7.5pF @ 1MHz
Current - Peak Pulse (10/1000µs): 2.5A (8/20µs)
Voltage - Reverse Standoff (Typ): 23V (Max)
Supplier Device Package: SL2
Unidirectional Channels: 1
Voltage - Breakdown (Min): 28V
Voltage - Clamping (Max) @ Ipp: 58V
Power - Peak Pulse: 145W
Power Line Protection: No
товару немає в наявності
В кошику
од. на суму грн.
| XCEZ13V,L3XHF |
![]() |
Виробник: Toshiba Semiconductor and Storage
Description: 13 V ZENER DIODE, SOD-523(ESC)
Packaging: Tape & Reel (TR)
Package / Case: SC-79, SOD-523
Mounting Type: Surface Mount
Type: Zener
Operating Temperature: 150°C (TJ)
Capacitance @ Frequency: 42pF @ 1MHz
Current - Peak Pulse (10/1000µs): 6.5A (8/20µs)
Voltage - Reverse Standoff (Typ): 11V
Supplier Device Package: ESC
Unidirectional Channels: 1
Voltage - Breakdown (Min): 12.4V
Voltage - Clamping (Max) @ Ipp: 27V
Power - Peak Pulse: 200W
Power Line Protection: No
Grade: Automotive
Qualification: AEC-Q101
Description: 13 V ZENER DIODE, SOD-523(ESC)
Packaging: Tape & Reel (TR)
Package / Case: SC-79, SOD-523
Mounting Type: Surface Mount
Type: Zener
Operating Temperature: 150°C (TJ)
Capacitance @ Frequency: 42pF @ 1MHz
Current - Peak Pulse (10/1000µs): 6.5A (8/20µs)
Voltage - Reverse Standoff (Typ): 11V
Supplier Device Package: ESC
Unidirectional Channels: 1
Voltage - Breakdown (Min): 12.4V
Voltage - Clamping (Max) @ Ipp: 27V
Power - Peak Pulse: 200W
Power Line Protection: No
Grade: Automotive
Qualification: AEC-Q101
на замовлення 16000 шт:
термін постачання 21-31 дні (днів)| Кількість | Ціна |
|---|---|
| 8000+ | 1.59 грн |
| 16000+ | 1.48 грн |
| XCEZ13V,L3XHF |
![]() |
Виробник: Toshiba Semiconductor and Storage
Description: 13 V ZENER DIODE, SOD-523(ESC)
Packaging: Cut Tape (CT)
Package / Case: SC-79, SOD-523
Mounting Type: Surface Mount
Type: Zener
Operating Temperature: 150°C (TJ)
Capacitance @ Frequency: 42pF @ 1MHz
Current - Peak Pulse (10/1000µs): 6.5A (8/20µs)
Voltage - Reverse Standoff (Typ): 11V
Supplier Device Package: ESC
Unidirectional Channels: 1
Voltage - Breakdown (Min): 12.4V
Voltage - Clamping (Max) @ Ipp: 27V
Power - Peak Pulse: 200W
Power Line Protection: No
Grade: Automotive
Qualification: AEC-Q101
Description: 13 V ZENER DIODE, SOD-523(ESC)
Packaging: Cut Tape (CT)
Package / Case: SC-79, SOD-523
Mounting Type: Surface Mount
Type: Zener
Operating Temperature: 150°C (TJ)
Capacitance @ Frequency: 42pF @ 1MHz
Current - Peak Pulse (10/1000µs): 6.5A (8/20µs)
Voltage - Reverse Standoff (Typ): 11V
Supplier Device Package: ESC
Unidirectional Channels: 1
Voltage - Breakdown (Min): 12.4V
Voltage - Clamping (Max) @ Ipp: 27V
Power - Peak Pulse: 200W
Power Line Protection: No
Grade: Automotive
Qualification: AEC-Q101
на замовлення 16000 шт:
термін постачання 21-31 дні (днів)| Кількість | Ціна |
|---|---|
| 45+ | 6.99 грн |
| 98+ | 3.07 грн |
| 115+ | 2.60 грн |
| 137+ | 2.05 грн |
| 250+ | 1.85 грн |
| 500+ | 1.74 грн |
| 1000+ | 1.61 грн |
| 2500+ | 1.51 грн |
| XCEZ30V,L3XHF |
![]() |
Виробник: Toshiba Semiconductor and Storage
Description: 30 V ZENER DIODE, SOD-523(ESC)
Packaging: Tape & Reel (TR)
Package / Case: SC-79, SOD-523
Mounting Type: Surface Mount
Type: Zener
Operating Temperature: 150°C (TJ)
Capacitance @ Frequency: 21pF @ 1MHz
Current - Peak Pulse (10/1000µs): 4A (8/20µs)
Voltage - Reverse Standoff (Typ): 27V
Supplier Device Package: ESC
Unidirectional Channels: 1
Voltage - Breakdown (Min): 28V
Voltage - Clamping (Max) @ Ipp: 47.5V
Power - Peak Pulse: 200W
Power Line Protection: No
Grade: Automotive
Qualification: AEC-Q101
Description: 30 V ZENER DIODE, SOD-523(ESC)
Packaging: Tape & Reel (TR)
Package / Case: SC-79, SOD-523
Mounting Type: Surface Mount
Type: Zener
Operating Temperature: 150°C (TJ)
Capacitance @ Frequency: 21pF @ 1MHz
Current - Peak Pulse (10/1000µs): 4A (8/20µs)
Voltage - Reverse Standoff (Typ): 27V
Supplier Device Package: ESC
Unidirectional Channels: 1
Voltage - Breakdown (Min): 28V
Voltage - Clamping (Max) @ Ipp: 47.5V
Power - Peak Pulse: 200W
Power Line Protection: No
Grade: Automotive
Qualification: AEC-Q101
на замовлення 15890 шт:
термін постачання 21-31 дні (днів)| Кількість | Ціна |
|---|---|
| 8000+ | 1.59 грн |
| XCEZ30V,L3XHF |
![]() |
Виробник: Toshiba Semiconductor and Storage
Description: 30 V ZENER DIODE, SOD-523(ESC)
Packaging: Cut Tape (CT)
Package / Case: SC-79, SOD-523
Mounting Type: Surface Mount
Type: Zener
Operating Temperature: 150°C (TJ)
Capacitance @ Frequency: 21pF @ 1MHz
Current - Peak Pulse (10/1000µs): 4A (8/20µs)
Voltage - Reverse Standoff (Typ): 27V
Supplier Device Package: ESC
Unidirectional Channels: 1
Voltage - Breakdown (Min): 28V
Voltage - Clamping (Max) @ Ipp: 47.5V
Power - Peak Pulse: 200W
Power Line Protection: No
Grade: Automotive
Qualification: AEC-Q101
Description: 30 V ZENER DIODE, SOD-523(ESC)
Packaging: Cut Tape (CT)
Package / Case: SC-79, SOD-523
Mounting Type: Surface Mount
Type: Zener
Operating Temperature: 150°C (TJ)
Capacitance @ Frequency: 21pF @ 1MHz
Current - Peak Pulse (10/1000µs): 4A (8/20µs)
Voltage - Reverse Standoff (Typ): 27V
Supplier Device Package: ESC
Unidirectional Channels: 1
Voltage - Breakdown (Min): 28V
Voltage - Clamping (Max) @ Ipp: 47.5V
Power - Peak Pulse: 200W
Power Line Protection: No
Grade: Automotive
Qualification: AEC-Q101
на замовлення 15890 шт:
термін постачання 21-31 дні (днів)| Кількість | Ціна |
|---|---|
| 45+ | 6.99 грн |
| 98+ | 3.07 грн |
| 115+ | 2.60 грн |
| 137+ | 2.05 грн |
| 250+ | 1.85 грн |
| 500+ | 1.74 грн |
| 1000+ | 1.61 грн |
| 2500+ | 1.51 грн |
| XCEZ22V,L3XHF |
![]() |
Виробник: Toshiba Semiconductor and Storage
Description: 22 V ZENER DIODE, SOD-523(ESC)
Packaging: Tape & Reel (TR)
Package / Case: SC-79, SOD-523
Mounting Type: Surface Mount
Type: Zener
Operating Temperature: 150°C (TJ)
Capacitance @ Frequency: 27pF @ 1MHz
Current - Peak Pulse (10/1000µs): 4.75A (8/20µs)
Voltage - Reverse Standoff (Typ): 18V
Supplier Device Package: ESC
Unidirectional Channels: 1
Voltage - Breakdown (Min): 20.8V
Voltage - Clamping (Max) @ Ipp: 32V
Power - Peak Pulse: 200W
Power Line Protection: No
Grade: Automotive
Qualification: AEC-Q101
Description: 22 V ZENER DIODE, SOD-523(ESC)
Packaging: Tape & Reel (TR)
Package / Case: SC-79, SOD-523
Mounting Type: Surface Mount
Type: Zener
Operating Temperature: 150°C (TJ)
Capacitance @ Frequency: 27pF @ 1MHz
Current - Peak Pulse (10/1000µs): 4.75A (8/20µs)
Voltage - Reverse Standoff (Typ): 18V
Supplier Device Package: ESC
Unidirectional Channels: 1
Voltage - Breakdown (Min): 20.8V
Voltage - Clamping (Max) @ Ipp: 32V
Power - Peak Pulse: 200W
Power Line Protection: No
Grade: Automotive
Qualification: AEC-Q101
на замовлення 15380 шт:
термін постачання 21-31 дні (днів)| Кількість | Ціна |
|---|---|
| 8000+ | 1.59 грн |
| XCEZ22V,L3XHF |
![]() |
Виробник: Toshiba Semiconductor and Storage
Description: 22 V ZENER DIODE, SOD-523(ESC)
Packaging: Cut Tape (CT)
Package / Case: SC-79, SOD-523
Mounting Type: Surface Mount
Type: Zener
Operating Temperature: 150°C (TJ)
Capacitance @ Frequency: 27pF @ 1MHz
Current - Peak Pulse (10/1000µs): 4.75A (8/20µs)
Voltage - Reverse Standoff (Typ): 18V
Supplier Device Package: ESC
Unidirectional Channels: 1
Voltage - Breakdown (Min): 20.8V
Voltage - Clamping (Max) @ Ipp: 32V
Power - Peak Pulse: 200W
Power Line Protection: No
Grade: Automotive
Qualification: AEC-Q101
Description: 22 V ZENER DIODE, SOD-523(ESC)
Packaging: Cut Tape (CT)
Package / Case: SC-79, SOD-523
Mounting Type: Surface Mount
Type: Zener
Operating Temperature: 150°C (TJ)
Capacitance @ Frequency: 27pF @ 1MHz
Current - Peak Pulse (10/1000µs): 4.75A (8/20µs)
Voltage - Reverse Standoff (Typ): 18V
Supplier Device Package: ESC
Unidirectional Channels: 1
Voltage - Breakdown (Min): 20.8V
Voltage - Clamping (Max) @ Ipp: 32V
Power - Peak Pulse: 200W
Power Line Protection: No
Grade: Automotive
Qualification: AEC-Q101
на замовлення 15380 шт:
термін постачання 21-31 дні (днів)| Кількість | Ціна |
|---|---|
| 45+ | 6.99 грн |
| 98+ | 3.07 грн |
| 115+ | 2.60 грн |
| 137+ | 2.05 грн |
| 250+ | 1.85 грн |
| 500+ | 1.74 грн |
| 1000+ | 1.61 грн |
| 2500+ | 1.51 грн |
| XCEZ27V,L3XHF |
![]() |
Виробник: Toshiba Semiconductor and Storage
Description: 27 V ZENER DIODE, SOD-523(ESC) A
Packaging: Tape & Reel (TR)
Package / Case: SC-79, SOD-523
Mounting Type: Surface Mount
Type: Zener
Operating Temperature: 150°C (TJ)
Capacitance @ Frequency: 23pF @ 1MHz
Current - Peak Pulse (10/1000µs): 4.1A (8/20µs)
Voltage - Reverse Standoff (Typ): 23V (Max)
Supplier Device Package: ESC
Unidirectional Channels: 1
Voltage - Breakdown (Min): 25.1V
Voltage - Clamping (Max) @ Ipp: 45V
Power - Peak Pulse: 200W
Power Line Protection: No
Grade: Automotive
Qualification: AEC-Q101
Description: 27 V ZENER DIODE, SOD-523(ESC) A
Packaging: Tape & Reel (TR)
Package / Case: SC-79, SOD-523
Mounting Type: Surface Mount
Type: Zener
Operating Temperature: 150°C (TJ)
Capacitance @ Frequency: 23pF @ 1MHz
Current - Peak Pulse (10/1000µs): 4.1A (8/20µs)
Voltage - Reverse Standoff (Typ): 23V (Max)
Supplier Device Package: ESC
Unidirectional Channels: 1
Voltage - Breakdown (Min): 25.1V
Voltage - Clamping (Max) @ Ipp: 45V
Power - Peak Pulse: 200W
Power Line Protection: No
Grade: Automotive
Qualification: AEC-Q101
на замовлення 15900 шт:
термін постачання 21-31 дні (днів)| Кількість | Ціна |
|---|---|
| 8000+ | 2.14 грн |
| XCEZ27V,L3XHF |
![]() |
Виробник: Toshiba Semiconductor and Storage
Description: 27 V ZENER DIODE, SOD-523(ESC) A
Packaging: Cut Tape (CT)
Package / Case: SC-79, SOD-523
Mounting Type: Surface Mount
Type: Zener
Operating Temperature: 150°C (TJ)
Capacitance @ Frequency: 23pF @ 1MHz
Current - Peak Pulse (10/1000µs): 4.1A (8/20µs)
Voltage - Reverse Standoff (Typ): 23V (Max)
Supplier Device Package: ESC
Unidirectional Channels: 1
Voltage - Breakdown (Min): 25.1V
Voltage - Clamping (Max) @ Ipp: 45V
Power - Peak Pulse: 200W
Power Line Protection: No
Grade: Automotive
Qualification: AEC-Q101
Description: 27 V ZENER DIODE, SOD-523(ESC) A
Packaging: Cut Tape (CT)
Package / Case: SC-79, SOD-523
Mounting Type: Surface Mount
Type: Zener
Operating Temperature: 150°C (TJ)
Capacitance @ Frequency: 23pF @ 1MHz
Current - Peak Pulse (10/1000µs): 4.1A (8/20µs)
Voltage - Reverse Standoff (Typ): 23V (Max)
Supplier Device Package: ESC
Unidirectional Channels: 1
Voltage - Breakdown (Min): 25.1V
Voltage - Clamping (Max) @ Ipp: 45V
Power - Peak Pulse: 200W
Power Line Protection: No
Grade: Automotive
Qualification: AEC-Q101
на замовлення 15900 шт:
термін постачання 21-31 дні (днів)| Кількість | Ціна |
|---|---|
| 25+ | 12.43 грн |
| 40+ | 7.63 грн |
| 100+ | 4.72 грн |
| 500+ | 3.23 грн |
| 1000+ | 2.84 грн |
| 2000+ | 2.51 грн |


















