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TC74VHC14FK(EL,K) TC74VHC14FK(EL,K) Toshiba Semiconductor and Storage TC74VHC14FK_datasheet_en_20190131.pdf?did=17593&prodName=TC74VHC14FK Description: IC INVERTER 6CH 1-INP 14VSSOP
Features: Schmitt Trigger
Packaging: Cut Tape (CT)
Package / Case: 14-VFSOP (0.118", 3.00mm Width)
Mounting Type: Surface Mount
Logic Type: Inverter
Operating Temperature: -40°C ~ 85°C
Voltage - Supply: 2V ~ 5.5V
Current - Output High, Low: 8mA, 8mA
Number of Inputs: 1
Supplier Device Package: 14-VSSOP
Input Logic Level - High: 2.2V ~ 3.85V
Input Logic Level - Low: 0.9V ~ 1.65V
Max Propagation Delay @ V, Max CL: 10.6ns @ 5V, 50pF
Number of Circuits: 6
Current - Quiescent (Max): 2 µA
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XPH1R104PS,L1XHQ XPH1R104PS,L1XHQ Toshiba Semiconductor and Storage docget.jsp?did=139827&prodName=XPH1R104PS Description: 40V UMOS9-H SOP ADVANCE
Packaging: Tape & Reel (TR)
Package / Case: 8-PowerVDFN
Mounting Type: Surface Mount
Operating Temperature: 175°C
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 120A (Ta)
Rds On (Max) @ Id, Vgs: 1.14mOhm @ 60A, 10V
Power Dissipation (Max): 3W (Ta), 132W (Tc)
Vgs(th) (Max) @ Id: 3V @ 500µA
Supplier Device Package: 8-SOP Advance (5x5)
Grade: Automotive
Drive Voltage (Max Rds On, Min Rds On): 6V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 40 V
Gate Charge (Qg) (Max) @ Vgs: 55 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 4560 pF @ 10 V
Qualification: AEC-Q101
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XPH1R104PS,L1XHQ XPH1R104PS,L1XHQ Toshiba Semiconductor and Storage docget.jsp?did=139827&prodName=XPH1R104PS Description: 40V UMOS9-H SOP ADVANCE
Packaging: Cut Tape (CT)
Package / Case: 8-PowerVDFN
Mounting Type: Surface Mount
Operating Temperature: 175°C
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 120A (Ta)
Rds On (Max) @ Id, Vgs: 1.14mOhm @ 60A, 10V
Power Dissipation (Max): 3W (Ta), 132W (Tc)
Vgs(th) (Max) @ Id: 3V @ 500µA
Supplier Device Package: 8-SOP Advance (5x5)
Grade: Automotive
Drive Voltage (Max Rds On, Min Rds On): 6V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 40 V
Gate Charge (Qg) (Max) @ Vgs: 55 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 4560 pF @ 10 V
Qualification: AEC-Q101
на замовлення 4750 шт:
термін постачання 21-31 дні (днів)
3+131.32 грн
10+85.90 грн
100+61.48 грн
500+47.14 грн
1000+42.46 грн
Мінімальне замовлення: 3
В кошику  од. на суму  грн.
TCK1024G,LF TCK1024G,LF Toshiba Semiconductor and Storage TCK22946G_datasheet_en_20220609.pdf?did=36710&prodName=TCK22946G Description: IC PWR SWITCH P-CHAN 1:1 WCSP6E
Packaging: Tape & Reel (TR)
Features: Load Discharge
Package / Case: 6-UFBGA, WLCSP
Output Type: P-Channel
Mounting Type: Surface Mount
Number of Outputs: 1
Interface: On/Off
Switch Type: General Purpose
Operating Temperature: -40°C ~ 85°C (TA)
Output Configuration: High Side
Rds On (Typ): 31mOhm
Input Type: Non-Inverting
Voltage - Load: 1.4V ~ 5.5V
Current - Output (Max): 1.54A
Ratio - Input:Output: 1:1
Supplier Device Package: 6-WCSPE (0.80x1.2)
Fault Protection: Current Limiting (Fixed), Over Temperature, Reverse Current
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TCK1024G,LF TCK1024G,LF Toshiba Semiconductor and Storage TCK22946G_datasheet_en_20220609.pdf?did=36710&prodName=TCK22946G Description: IC PWR SWITCH P-CHAN 1:1 WCSP6E
Packaging: Cut Tape (CT)
Features: Load Discharge
Package / Case: 6-UFBGA, WLCSP
Output Type: P-Channel
Mounting Type: Surface Mount
Number of Outputs: 1
Interface: On/Off
Switch Type: General Purpose
Operating Temperature: -40°C ~ 85°C (TA)
Output Configuration: High Side
Rds On (Typ): 31mOhm
Input Type: Non-Inverting
Voltage - Load: 1.4V ~ 5.5V
Current - Output (Max): 1.54A
Ratio - Input:Output: 1:1
Supplier Device Package: 6-WCSPE (0.80x1.2)
Fault Protection: Current Limiting (Fixed), Over Temperature, Reverse Current
на замовлення 4448 шт:
термін постачання 21-31 дні (днів)
6+59.05 грн
10+35.32 грн
100+22.85 грн
500+16.39 грн
1000+14.76 грн
2000+13.39 грн
Мінімальне замовлення: 6
В кошику  од. на суму  грн.
XCUZ30V,H3XHF(B XCUZ30V,H3XHF(B Toshiba Semiconductor and Storage docget.jsp?did=153645&prodName=XCUZ30V Description: TVS DIODE 23VWM 47.5VC USC
Packaging: Tape & Reel (TR)
Package / Case: SC-76, SOD-323
Mounting Type: Surface Mount
Type: Zener
Operating Temperature: 150°C (TJ)
Capacitance @ Frequency: 21pF @ 1MHz
Current - Peak Pulse (10/1000µs): 4A (8/20µs)
Voltage - Reverse Standoff (Typ): 23V (Max)
Supplier Device Package: USC
Unidirectional Channels: 1
Voltage - Breakdown (Min): 28V
Voltage - Clamping (Max) @ Ipp: 47.5V (Typ)
Power - Peak Pulse: 200W
Power Line Protection: No
Grade: Automotive
Qualification: AEC-Q101
на замовлення 6000 шт:
термін постачання 21-31 дні (днів)
3000+2.51 грн
6000+2.16 грн
Мінімальне замовлення: 3000
В кошику  од. на суму  грн.
XCUZ30V,H3XHF(B XCUZ30V,H3XHF(B Toshiba Semiconductor and Storage docget.jsp?did=153645&prodName=XCUZ30V Description: TVS DIODE 23VWM 47.5VC USC
Packaging: Cut Tape (CT)
Package / Case: SC-76, SOD-323
Mounting Type: Surface Mount
Type: Zener
Operating Temperature: 150°C (TJ)
Capacitance @ Frequency: 21pF @ 1MHz
Current - Peak Pulse (10/1000µs): 4A (8/20µs)
Voltage - Reverse Standoff (Typ): 23V (Max)
Supplier Device Package: USC
Unidirectional Channels: 1
Voltage - Breakdown (Min): 28V
Voltage - Clamping (Max) @ Ipp: 47.5V (Typ)
Power - Peak Pulse: 200W
Power Line Protection: No
Grade: Automotive
Qualification: AEC-Q101
на замовлення 6000 шт:
термін постачання 21-31 дні (днів)
25+12.43 грн
40+7.63 грн
100+4.72 грн
500+3.23 грн
1000+2.84 грн
Мінімальне замовлення: 25
В кошику  од. на суму  грн.
2SC4213-A(TE85L,F) 2SC4213-A(TE85L,F) Toshiba Semiconductor and Storage 2SC4213_datasheet_en_20210625.pdf?did=19305&prodName=2SC4213 Description: TRANS NPN 20V 0.3A SC-70
Packaging: Cut Tape (CT)
Package / Case: SC-70, SOT-323
Mounting Type: Surface Mount
Transistor Type: NPN
Operating Temperature: 125°C (TJ)
Vce Saturation (Max) @ Ib, Ic: 100mV @ 3mA, 30A
Current - Collector Cutoff (Max): 100nA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce: 200 @ 4mA, 2V
Frequency - Transition: 30MHz
Supplier Device Package: SC-70
Current - Collector (Ic) (Max): 300 mA
Voltage - Collector Emitter Breakdown (Max): 20 V
Power - Max: 100 mW
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XCUZ6V2,H3XHF(B XCUZ6V2,H3XHF(B Toshiba Semiconductor and Storage docget.jsp?did=153645&prodName=XCUZ15V Description: 6.2 V ZENER DIODEAEC-Q, SOD-323(
Packaging: Tape & Reel (TR)
Package / Case: SC-76, SOD-323
Mounting Type: Surface Mount
Type: Zener
Operating Temperature: 150°C (TJ)
Capacitance @ Frequency: 105pF @ 1MHz
Current - Peak Pulse (10/1000µs): 11A (8/20µs)
Voltage - Reverse Standoff (Typ): 3V (Max)
Supplier Device Package: USC
Unidirectional Channels: 1
Voltage - Breakdown (Min): 5.8V
Voltage - Clamping (Max) @ Ipp: 10V (Typ)
Power - Peak Pulse: 175W
Power Line Protection: No
Grade: Automotive
Qualification: AEC-Q101
на замовлення 3000 шт:
термін постачання 21-31 дні (днів)
3000+2.28 грн
Мінімальне замовлення: 3000
В кошику  од. на суму  грн.
XCUZ6V2,H3XHF(B XCUZ6V2,H3XHF(B Toshiba Semiconductor and Storage docget.jsp?did=153645&prodName=XCUZ15V Description: 6.2 V ZENER DIODEAEC-Q, SOD-323(
Packaging: Cut Tape (CT)
Package / Case: SC-76, SOD-323
Mounting Type: Surface Mount
Type: Zener
Operating Temperature: 150°C (TJ)
Capacitance @ Frequency: 105pF @ 1MHz
Current - Peak Pulse (10/1000µs): 11A (8/20µs)
Voltage - Reverse Standoff (Typ): 3V (Max)
Supplier Device Package: USC
Unidirectional Channels: 1
Voltage - Breakdown (Min): 5.8V
Voltage - Clamping (Max) @ Ipp: 10V (Typ)
Power - Peak Pulse: 175W
Power Line Protection: No
Grade: Automotive
Qualification: AEC-Q101
на замовлення 5960 шт:
термін постачання 21-31 дні (днів)
23+13.99 грн
37+8.16 грн
100+5.04 грн
500+3.45 грн
1000+3.03 грн
Мінімальне замовлення: 23
В кошику  од. на суму  грн.
TLP620M(BL-TP5,E TLP620M(BL-TP5,E Toshiba Semiconductor and Storage TLP620M_datasheet_en_20250708.pdf?did=68743&prodName=TLP620M Description: OPTOISOLATOR 5KV 1CH TRANS 4-SMD
Packaging: Tape & Reel (TR)
Package / Case: 4-SMD, Gull Wing
Output Type: Transistor
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 125°C
Voltage - Forward (Vf) (Typ): 1.25V
Input Type: AC, DC
Current - Output / Channel: 50mA
Voltage - Isolation: 5000Vrms
Current Transfer Ratio (Min): 50% @ 5mA
Vce Saturation (Max): 300mV
Current Transfer Ratio (Max): 600% @ 5mA
Supplier Device Package: 4-SMD
Voltage - Output (Max): 80V
Turn On / Turn Off Time (Typ): 3µs, 3µs
Rise / Fall Time (Typ): 2µs, 3µs
Number of Channels: 1
Current - DC Forward (If) (Max): 50 mA
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TLP620M(D4BLT5,E TLP620M(D4BLT5,E Toshiba Semiconductor and Storage TLP620M_datasheet_en_20250708.pdf?did=68743&prodName=TLP620M Description: OPTOISOLATOR 5KV 1CH TRANS 4-DIP
Packaging: Tape & Reel (TR)
Package / Case: 4-DIP (0.300", 7.62mm)
Output Type: Transistor
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 125°C
Voltage - Forward (Vf) (Typ): 1.25V
Input Type: AC, DC
Current - Output / Channel: 50mA
Voltage - Isolation: 5000Vrms
Current Transfer Ratio (Min): 50% @ 5mA
Vce Saturation (Max): 300mV
Current Transfer Ratio (Max): 600% @ 5mA
Supplier Device Package: 4-DIP
Voltage - Output (Max): 80V
Turn On / Turn Off Time (Typ): 3µs, 3µs
Rise / Fall Time (Typ): 2µs, 3µs
Number of Channels: 1
Current - DC Forward (If) (Max): 50 mA
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TLP620M(D4-TP5,E TLP620M(D4-TP5,E Toshiba Semiconductor and Storage TLP620M_datasheet_en_20250708.pdf?did=68743&prodName=TLP620M Description: OPTOISOLATOR 5KV 1CH TRANS 4-SMD
Packaging: Tape & Reel (TR)
Package / Case: 4-SMD, Gull Wing
Output Type: Transistor
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 125°C
Voltage - Forward (Vf) (Typ): 1.25V
Input Type: AC, DC
Current - Output / Channel: 50mA
Voltage - Isolation: 5000Vrms
Current Transfer Ratio (Min): 50% @ 5mA
Vce Saturation (Max): 300mV
Current Transfer Ratio (Max): 600% @ 5mA
Supplier Device Package: 4-SMD
Voltage - Output (Max): 80V
Turn On / Turn Off Time (Typ): 3µs, 3µs
Rise / Fall Time (Typ): 2µs, 3µs
Number of Channels: 1
Current - DC Forward (If) (Max): 50 mA
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TLP620M(D4BLT1,E TLP620M(D4BLT1,E Toshiba Semiconductor and Storage TLP620M_datasheet_en_20250708.pdf?did=68743&prodName=TLP620M Description: OPTOISOLATOR 5KV 1CH TRANS 4-DIP
Packaging: Tape & Reel (TR)
Package / Case: 4-DIP (0.300", 7.62mm)
Output Type: Transistor
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 125°C
Voltage - Forward (Vf) (Typ): 1.25V
Input Type: AC, DC
Current - Output / Channel: 50mA
Voltage - Isolation: 5000Vrms
Current Transfer Ratio (Min): 50% @ 5mA
Vce Saturation (Max): 300mV
Current Transfer Ratio (Max): 600% @ 5mA
Supplier Device Package: 4-DIP
Voltage - Output (Max): 80V
Turn On / Turn Off Time (Typ): 3µs, 3µs
Rise / Fall Time (Typ): 2µs, 3µs
Number of Channels: 1
Current - DC Forward (If) (Max): 50 mA
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TLP620M(D4GBT5,E TLP620M(D4GBT5,E Toshiba Semiconductor and Storage TLP620M_datasheet_en_20250708.pdf?did=68743&prodName=TLP620M Description: OPTOISOLATOR 5KV 1CH TRANS 4-DIP
Packaging: Tape & Reel (TR)
Package / Case: 4-DIP (0.300", 7.62mm)
Output Type: Transistor
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 125°C
Voltage - Forward (Vf) (Typ): 1.25V
Input Type: AC, DC
Current - Output / Channel: 50mA
Voltage - Isolation: 5000Vrms
Current Transfer Ratio (Min): 100% @ 5mA
Vce Saturation (Max): 300mV
Current Transfer Ratio (Max): 600% @ 5mA
Supplier Device Package: 4-DIP
Voltage - Output (Max): 80V
Turn On / Turn Off Time (Typ): 3µs, 3µs
Rise / Fall Time (Typ): 2µs, 3µs
Number of Channels: 1
Current - DC Forward (If) (Max): 50 mA
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TLP620M(D4GRT5,E Toshiba Semiconductor and Storage Description: OPTOISOLATOR 5KV 1CH TRANS 4-DIP
Packaging: Tape & Reel (TR)
Package / Case: 4-DIP (0.300", 7.62mm)
Output Type: Transistor
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 125°C
Voltage - Forward (Vf) (Typ): 1.25V
Input Type: AC, DC
Current - Output / Channel: 50mA
Voltage - Isolation: 5000Vrms
Current Transfer Ratio (Min): 50% @ 5mA
Vce Saturation (Max): 300mV
Current Transfer Ratio (Max): 600% @ 5mA
Supplier Device Package: 4-DIP
Voltage - Output (Max): 80V
Turn On / Turn Off Time (Typ): 3µs, 3µs
Rise / Fall Time (Typ): 2µs, 3µs
Number of Channels: 1
Current - DC Forward (If) (Max): 50 mA
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TLP620M(D4GRT1,E TLP620M(D4GRT1,E Toshiba Semiconductor and Storage TLP620M_datasheet_en_20250708.pdf?did=68743&prodName=TLP620M Description: OPTOISOLATOR 5KV 1CH TRANS 4-DIP
Packaging: Tape & Reel (TR)
Package / Case: 4-DIP (0.300", 7.62mm)
Output Type: Transistor
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 125°C
Voltage - Forward (Vf) (Typ): 1.25V
Input Type: AC, DC
Current - Output / Channel: 50mA
Voltage - Isolation: 5000Vrms
Current Transfer Ratio (Min): 50% @ 5mA
Vce Saturation (Max): 300mV
Current Transfer Ratio (Max): 600% @ 5mA
Supplier Device Package: 4-DIP
Voltage - Output (Max): 80V
Turn On / Turn Off Time (Typ): 3µs, 3µs
Rise / Fall Time (Typ): 2µs, 3µs
Number of Channels: 1
Current - DC Forward (If) (Max): 50 mA
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TLP620M(GR-TP1,E TLP620M(GR-TP1,E Toshiba Semiconductor and Storage TLP620M_datasheet_en_20250708.pdf?did=68743&prodName=TLP620M Description: OPTOISOLATOR 5KV 1CH TRANS 4-SMD
Packaging: Tape & Reel (TR)
Package / Case: 4-SMD (0.300", 7.62mm)
Output Type: Transistor
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 125°C
Voltage - Forward (Vf) (Typ): 1.25V
Input Type: AC, DC
Current - Output / Channel: 50mA
Voltage - Isolation: 5000Vrms
Current Transfer Ratio (Min): 50% @ 5mA
Vce Saturation (Max): 300mV
Current Transfer Ratio (Max): 600% @ 5mA
Supplier Device Package: 4-SMD
Voltage - Output (Max): 80V
Turn On / Turn Off Time (Typ): 3µs, 3µs
Rise / Fall Time (Typ): 2µs, 3µs
Number of Channels: 1
Current - DC Forward (If) (Max): 50 mA
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TLP620M(D4Y-T1,E TLP620M(D4Y-T1,E Toshiba Semiconductor and Storage TLP620M_datasheet_en_20250708.pdf?did=68743&prodName=TLP620M Description: OPTOISOLATOR 5KV 1CH TRANS 4-DIP
Packaging: Tape & Reel (TR)
Package / Case: 4-DIP (0.300", 7.62mm)
Output Type: Transistor
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 125°C
Voltage - Forward (Vf) (Typ): 1.25V
Input Type: AC, DC
Current - Output / Channel: 50mA
Voltage - Isolation: 5000Vrms
Current Transfer Ratio (Min): 50% @ 5mA
Vce Saturation (Max): 300mV
Current Transfer Ratio (Max): 600% @ 5mA
Supplier Device Package: 4-DIP
Voltage - Output (Max): 80V
Turn On / Turn Off Time (Typ): 3µs, 3µs
Rise / Fall Time (Typ): 2µs, 3µs
Number of Channels: 1
Current - DC Forward (If) (Max): 50 mA
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TLP620M(D4GBT1,E TLP620M(D4GBT1,E Toshiba Semiconductor and Storage TLP620M_datasheet_en_20250708.pdf?did=68743&prodName=TLP620M Description: OPTOISOLATOR 5KV 1CH TRANS 4-DIP
Packaging: Tape & Reel (TR)
Package / Case: 4-DIP (0.300", 7.62mm)
Output Type: Transistor
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 125°C
Voltage - Forward (Vf) (Typ): 1.25V
Input Type: AC, DC
Current - Output / Channel: 50mA
Voltage - Isolation: 5000Vrms
Current Transfer Ratio (Min): 100% @ 5mA
Vce Saturation (Max): 300mV
Current Transfer Ratio (Max): 600% @ 5mA
Supplier Device Package: 4-DIP
Voltage - Output (Max): 80V
Turn On / Turn Off Time (Typ): 3µs, 3µs
Rise / Fall Time (Typ): 2µs, 3µs
Number of Channels: 1
Current - DC Forward (If) (Max): 50 mA
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TLP620M(BL-TP1,E Toshiba Semiconductor and Storage Description: OPTOISOLATOR 5KV 1CH TRANS 4-SMD
Packaging: Tape & Reel (TR)
Package / Case: 4-SMD (0.300", 7.62mm)
Output Type: Transistor
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 125°C
Voltage - Forward (Vf) (Typ): 1.25V
Input Type: AC, DC
Current - Output / Channel: 50mA
Voltage - Isolation: 5000Vrms
Current Transfer Ratio (Min): 50% @ 5mA
Vce Saturation (Max): 300mV
Current Transfer Ratio (Max): 600% @ 5mA
Supplier Device Package: 4-SMD
Voltage - Output (Max): 80V
Turn On / Turn Off Time (Typ): 3µs, 3µs
Rise / Fall Time (Typ): 2µs, 3µs
Number of Channels: 1
Current - DC Forward (If) (Max): 50 mA
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TLP620M(GB-TP5,E TLP620M(GB-TP5,E Toshiba Semiconductor and Storage TLP620M_datasheet_en_20250708.pdf?did=68743&prodName=TLP620M Description: OPTOISOLATOR 5KV 1CH TRANS 4-SMD
Packaging: Tape & Reel (TR)
Package / Case: 4-SMD, Gull Wing
Output Type: Transistor
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 125°C
Voltage - Forward (Vf) (Typ): 1.25V
Input Type: AC, DC
Current - Output / Channel: 50mA
Voltage - Isolation: 5000Vrms
Current Transfer Ratio (Min): 100% @ 5mA
Vce Saturation (Max): 300mV
Current Transfer Ratio (Max): 600% @ 5mA
Supplier Device Package: 4-SMD
Voltage - Output (Max): 80V
Turn On / Turn Off Time (Typ): 3µs, 3µs
Rise / Fall Time (Typ): 2µs, 3µs
Number of Channels: 1
Current - DC Forward (If) (Max): 50 mA
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TLP620M(D4Y-T5,E TLP620M(D4Y-T5,E Toshiba Semiconductor and Storage TLP620M_datasheet_en_20250708.pdf?did=68743&prodName=TLP620M Description: OPTOISOLATOR 5KV 1CH TRANS 4-DIP
Packaging: Tape & Reel (TR)
Package / Case: 4-DIP (0.300", 7.62mm)
Output Type: Transistor
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 125°C
Voltage - Forward (Vf) (Typ): 1.25V
Input Type: AC, DC
Current - Output / Channel: 50mA
Voltage - Isolation: 5000Vrms
Current Transfer Ratio (Min): 50% @ 5mA
Vce Saturation (Max): 300mV
Current Transfer Ratio (Max): 600% @ 5mA
Supplier Device Package: 4-DIP
Voltage - Output (Max): 80V
Turn On / Turn Off Time (Typ): 3µs, 3µs
Rise / Fall Time (Typ): 2µs, 3µs
Number of Channels: 1
Current - DC Forward (If) (Max): 50 mA
товару немає в наявності
В кошику  од. на суму  грн.
RN1410,LF RN1410,LF Toshiba Semiconductor and Storage docget.jsp?did=18792&prodName=RN1410 Description: TRANS PREBIAS NPN 50V SMINI
Packaging: Tape & Reel (TR)
Package / Case: TO-236-3, SC-59, SOT-23-3
Mounting Type: Surface Mount
Transistor Type: NPN - Pre-Biased
Vce Saturation (Max) @ Ib, Ic: 300mV @ 250µA, 5mA
Current - Collector Cutoff (Max): 100nA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce: 120 @ 1mA, 5V
Supplier Device Package: S-Mini
Current - Collector (Ic) (Max): 100 mA
Voltage - Collector Emitter Breakdown (Max): 50 V
Power - Max: 200 mW
Frequency - Transition: 250 MHz
Resistor - Base (R1): 4.7 kOhms
на замовлення 6000 шт:
термін постачання 21-31 дні (днів)
3000+2.36 грн
6000+2.02 грн
Мінімальне замовлення: 3000
В кошику  од. на суму  грн.
RN1410,LF RN1410,LF Toshiba Semiconductor and Storage docget.jsp?did=18792&prodName=RN1410 Description: TRANS PREBIAS NPN 50V SMINI
Packaging: Cut Tape (CT)
Package / Case: TO-236-3, SC-59, SOT-23-3
Mounting Type: Surface Mount
Transistor Type: NPN - Pre-Biased
Vce Saturation (Max) @ Ib, Ic: 300mV @ 250µA, 5mA
Current - Collector Cutoff (Max): 100nA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce: 120 @ 1mA, 5V
Supplier Device Package: S-Mini
Current - Collector (Ic) (Max): 100 mA
Voltage - Collector Emitter Breakdown (Max): 50 V
Power - Max: 200 mW
Frequency - Transition: 250 MHz
Resistor - Base (R1): 4.7 kOhms
на замовлення 10350 шт:
термін постачання 21-31 дні (днів)
27+11.66 грн
43+7.03 грн
100+4.34 грн
500+2.96 грн
1000+2.59 грн
Мінімальне замовлення: 27
В кошику  од. на суму  грн.
TLP2370(E TLP2370(E Toshiba Semiconductor and Storage TLP2370_datasheet_en_20170609.pdf?did=30500&prodName=TLP2370 Description: HIGH SPEED PHOTOCOUPLER; 5PIN SO
Packaging: Tube
Package / Case: 6-SOIC (0.179", 4.55mm Width), 5 Leads
Output Type: Push-Pull, Totem Pole
Mounting Type: Surface Mount
Operating Temperature: -40°C ~ 125°C
Voltage - Supply: 2.7V ~ 5.5V
Voltage - Forward (Vf) (Typ): 1.5V
Data Rate: 20Mbps
Input Type: DC
Voltage - Isolation: 3750Vrms
Current - DC Forward (If) (Max): 8mA
Inputs - Side 1/Side 2: 1/0
Supplier Device Package: 6-SO, 5 Lead
Rise / Fall Time (Typ): 3ns, 2ns
Common Mode Transient Immunity (Min): 20kV/µs
Propagation Delay tpLH / tpHL (Max): 60ns, 60ns
Number of Channels: 1
Current - Output / Channel: 10 mA
на замовлення 125 шт:
термін постачання 21-31 дні (днів)
3+133.65 грн
10+82.46 грн
125+57.05 грн
Мінімальне замовлення: 3
В кошику  од. на суму  грн.
RN1417,LF RN1417,LF Toshiba Semiconductor and Storage docget.jsp?did=18796&prodName=RN1415 Description: TRANS PREBIAS NPN 50V 0.1A SMINI
Packaging: Tape & Reel (TR)
Package / Case: TO-236-3, SC-59, SOT-23-3
Mounting Type: Surface Mount
Transistor Type: NPN - Pre-Biased
Vce Saturation (Max) @ Ib, Ic: 300mV @ 250µA, 5mA
Current - Collector Cutoff (Max): 500nA
DC Current Gain (hFE) (Min) @ Ic, Vce: 30 @ 10mA, 5V
Supplier Device Package: S-Mini
Current - Collector (Ic) (Max): 100 mA
Voltage - Collector Emitter Breakdown (Max): 50 V
Power - Max: 200 mW
Frequency - Transition: 250 MHz
Resistor - Base (R1): 10 kOhms
Resistor - Emitter Base (R2): 4.7 kOhms
на замовлення 3000 шт:
термін постачання 21-31 дні (днів)
3000+2.22 грн
Мінімальне замовлення: 3000
В кошику  од. на суму  грн.
RN1417,LF RN1417,LF Toshiba Semiconductor and Storage docget.jsp?did=18796&prodName=RN1415 Description: TRANS PREBIAS NPN 50V 0.1A SMINI
Packaging: Cut Tape (CT)
Package / Case: TO-236-3, SC-59, SOT-23-3
Mounting Type: Surface Mount
Transistor Type: NPN - Pre-Biased
Vce Saturation (Max) @ Ib, Ic: 300mV @ 250µA, 5mA
Current - Collector Cutoff (Max): 500nA
DC Current Gain (hFE) (Min) @ Ic, Vce: 30 @ 10mA, 5V
Supplier Device Package: S-Mini
Current - Collector (Ic) (Max): 100 mA
Voltage - Collector Emitter Breakdown (Max): 50 V
Power - Max: 200 mW
Frequency - Transition: 250 MHz
Resistor - Base (R1): 10 kOhms
Resistor - Emitter Base (R2): 4.7 kOhms
на замовлення 4070 шт:
термін постачання 21-31 дні (днів)
29+10.88 грн
45+6.66 грн
100+4.09 грн
500+2.79 грн
1000+2.44 грн
Мінімальне замовлення: 29
В кошику  од. на суму  грн.
RN1414,LF RN1414,LF Toshiba Semiconductor and Storage docget.jsp?did=18796&prodName=RN1415 Description: TRANS PREBIAS NPN 50V 0.1A SMINI
Packaging: Tape & Reel (TR)
Package / Case: TO-236-3, SC-59, SOT-23-3
Mounting Type: Surface Mount
Transistor Type: NPN - Pre-Biased
Vce Saturation (Max) @ Ib, Ic: 300mV @ 250µA, 5mA
Current - Collector Cutoff (Max): 500nA
DC Current Gain (hFE) (Min) @ Ic, Vce: 50 @ 10mA, 5V
Supplier Device Package: S-Mini
Current - Collector (Ic) (Max): 100 mA
Voltage - Collector Emitter Breakdown (Max): 50 V
Power - Max: 200 mW
Frequency - Transition: 250 MHz
Resistor - Base (R1): 1 kOhms
Resistor - Emitter Base (R2): 10 kOhms
на замовлення 12000 шт:
термін постачання 21-31 дні (днів)
3000+2.36 грн
6000+2.02 грн
9000+1.89 грн
Мінімальне замовлення: 3000
В кошику  од. на суму  грн.
RN1414,LF RN1414,LF Toshiba Semiconductor and Storage docget.jsp?did=18796&prodName=RN1415 Description: TRANS PREBIAS NPN 50V 0.1A SMINI
Packaging: Cut Tape (CT)
Package / Case: TO-236-3, SC-59, SOT-23-3
Mounting Type: Surface Mount
Transistor Type: NPN - Pre-Biased
Vce Saturation (Max) @ Ib, Ic: 300mV @ 250µA, 5mA
Current - Collector Cutoff (Max): 500nA
DC Current Gain (hFE) (Min) @ Ic, Vce: 50 @ 10mA, 5V
Supplier Device Package: S-Mini
Current - Collector (Ic) (Max): 100 mA
Voltage - Collector Emitter Breakdown (Max): 50 V
Power - Max: 200 mW
Frequency - Transition: 250 MHz
Resistor - Base (R1): 1 kOhms
Resistor - Emitter Base (R2): 10 kOhms
на замовлення 14779 шт:
термін постачання 21-31 дні (днів)
27+11.66 грн
43+7.03 грн
100+4.34 грн
500+2.96 грн
1000+2.59 грн
Мінімальне замовлення: 27
В кошику  од. на суму  грн.
RN1404,LF RN1404,LF Toshiba Semiconductor and Storage docget.jsp?did=18787&prodName=RN1401 Description: TRANS PREBIAS NPN 50V 0.1A SMINI
Packaging: Tape & Reel (TR)
Package / Case: TO-236-3, SC-59, SOT-23-3
Mounting Type: Surface Mount
Transistor Type: NPN - Pre-Biased
Vce Saturation (Max) @ Ib, Ic: 300mV @ 250µA, 5mA
Current - Collector Cutoff (Max): 500nA
DC Current Gain (hFE) (Min) @ Ic, Vce: 80 @ 10mA, 5V
Supplier Device Package: S-Mini
Current - Collector (Ic) (Max): 100 mA
Voltage - Collector Emitter Breakdown (Max): 50 V
Power - Max: 200 mW
Frequency - Transition: 250 MHz
Resistor - Base (R1): 47 kOhms
Resistor - Emitter Base (R2): 47 kOhms
товару немає в наявності
В кошику  од. на суму  грн.
RN1404,LF RN1404,LF Toshiba Semiconductor and Storage docget.jsp?did=18787&prodName=RN1401 Description: TRANS PREBIAS NPN 50V 0.1A SMINI
Packaging: Cut Tape (CT)
Package / Case: TO-236-3, SC-59, SOT-23-3
Mounting Type: Surface Mount
Transistor Type: NPN - Pre-Biased
Vce Saturation (Max) @ Ib, Ic: 300mV @ 250µA, 5mA
Current - Collector Cutoff (Max): 500nA
DC Current Gain (hFE) (Min) @ Ic, Vce: 80 @ 10mA, 5V
Supplier Device Package: S-Mini
Current - Collector (Ic) (Max): 100 mA
Voltage - Collector Emitter Breakdown (Max): 50 V
Power - Max: 200 mW
Frequency - Transition: 250 MHz
Resistor - Base (R1): 47 kOhms
Resistor - Emitter Base (R2): 47 kOhms
на замовлення 2413 шт:
термін постачання 21-31 дні (днів)
23+13.99 грн
37+8.16 грн
100+5.04 грн
500+3.45 грн
1000+3.03 грн
Мінімальне замовлення: 23
В кошику  од. на суму  грн.
RN1415,LF RN1415,LF Toshiba Semiconductor and Storage Description: TRANS PREBIAS NPN 50V 0.1A SMINI
Packaging: Tape & Reel (TR)
Package / Case: TO-236-3, SC-59, SOT-23-3
Mounting Type: Surface Mount
Transistor Type: NPN - Pre-Biased
Vce Saturation (Max) @ Ib, Ic: 300mV @ 250µA, 5mA
Current - Collector Cutoff (Max): 500nA
DC Current Gain (hFE) (Min) @ Ic, Vce: 50 @ 10mA, 5V
Supplier Device Package: S-Mini
Current - Collector (Ic) (Max): 100 mA
Voltage - Collector Emitter Breakdown (Max): 50 V
Power - Max: 200 mW
Frequency - Transition: 250 MHz
Resistor - Base (R1): 2.2 kOhms
Resistor - Emitter Base (R2): 10 kOhms
на замовлення 3000 шт:
термін постачання 21-31 дні (днів)
3000+2.22 грн
Мінімальне замовлення: 3000
В кошику  од. на суму  грн.
RN1415,LF RN1415,LF Toshiba Semiconductor and Storage Description: TRANS PREBIAS NPN 50V 0.1A SMINI
Packaging: Cut Tape (CT)
Package / Case: TO-236-3, SC-59, SOT-23-3
Mounting Type: Surface Mount
Transistor Type: NPN - Pre-Biased
Vce Saturation (Max) @ Ib, Ic: 300mV @ 250µA, 5mA
Current - Collector Cutoff (Max): 500nA
DC Current Gain (hFE) (Min) @ Ic, Vce: 50 @ 10mA, 5V
Supplier Device Package: S-Mini
Current - Collector (Ic) (Max): 100 mA
Voltage - Collector Emitter Breakdown (Max): 50 V
Power - Max: 200 mW
Frequency - Transition: 250 MHz
Resistor - Base (R1): 2.2 kOhms
Resistor - Emitter Base (R2): 10 kOhms
на замовлення 5406 шт:
термін постачання 21-31 дні (днів)
27+11.66 грн
44+6.81 грн
100+4.22 грн
500+2.87 грн
1000+2.52 грн
Мінімальне замовлення: 27
В кошику  од. на суму  грн.
TLP3555A(LF1,F TLP3555A(LF1,F Toshiba Semiconductor and Storage docget.jsp?did=61844&prodName=TLP3555A Description: SSR RELAY SPST-NO 2.5A 0-40V
Packaging: Tube
Package / Case: 4-SMD (0.300", 7.62mm)
Output Type: AC, DC
Mounting Type: Surface Mount
Voltage - Input: 1.64VDC
Circuit: SPST-NO (1 Form A)
Operating Temperature: -40°C ~ 110°C
Termination Style: SMD (SMT) Tab
Load Current: 3 A
Approval Agency: CSA, cUL, UL, VDE
Supplier Device Package: 4-SMD
Voltage - Load: 0 V ~ 60 V
On-State Resistance (Max): 100 mOhms
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TTB1020B,S4X(S Toshiba Semiconductor and Storage TTB1020B_datasheet_en_20200129.pdf?did=13851&prodName=TTB1020B Description: TRANSISTOR PNP TO220
Packaging: Tube
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В кошику  од. на суму  грн.
TB62218AFTG,C8,EL TB62218AFTG,C8,EL Toshiba Semiconductor and Storage TB62218AFTG_datasheet_en_20120312.pdf?did=13039&prodName=TB62218AFTG Description: IC MTRDRV BIPLR 4.75-5.25V 48QFN
Packaging: Cut Tape (CT)
Package / Case: 48-VFQFN Exposed Pad
Mounting Type: Surface Mount
Function: Driver - Fully Integrated, Control and Power Stage
Current - Output: 2A
Interface: Parallel
Operating Temperature: -20°C ~ 150°C (TJ)
Output Configuration: Half Bridge (4)
Voltage - Supply: 4.75V ~ 5.25V
Applications: General Purpose
Technology: DMOS
Voltage - Load: 10V ~ 38V
Supplier Device Package: 48-QFN (7x7)
Motor Type - Stepper: Bipolar
Step Resolution: 1, 1/2, 1/4
на замовлення 2000 шт:
термін постачання 21-31 дні (днів)
2+284.39 грн
10+175.84 грн
25+150.25 грн
100+113.86 грн
250+100.53 грн
500+92.33 грн
1000+84.07 грн
Мінімальне замовлення: 2
В кошику  од. на суму  грн.
TCR3LM18A,RF Toshiba Semiconductor and Storage docget.jsp?did=151501&prodName=TCR3LM33A Description: LDO IOUT: 300MA PD: 420MW VIN: 6
Packaging: Tape & Reel (TR)
Package / Case: 4-XDFN Exposed Pad
Output Type: Fixed
Mounting Type: Surface Mount
Current - Output: 300mA
Operating Temperature: -40°C ~ 85°C
Output Configuration: Positive
Current - Quiescent (Iq): 2.2 µA
Voltage - Input (Max): 5.5V
Number of Regulators: 1
Supplier Device Package: 4-DFN (1x1)
Voltage - Output (Min/Fixed): 1.8V
Control Features: Current Limit, Enable
Voltage Dropout (Max): 0.445V @ 200mA
Protection Features: Over Current, Over Temperature
на замовлення 10000 шт:
термін постачання 21-31 дні (днів)
5000+6.49 грн
10000+5.74 грн
Мінімальне замовлення: 5000
В кошику  од. на суму  грн.
TCR3LM18A,RF Toshiba Semiconductor and Storage docget.jsp?did=151501&prodName=TCR3LM33A Description: LDO IOUT: 300MA PD: 420MW VIN: 6
Packaging: Cut Tape (CT)
Package / Case: 4-XDFN Exposed Pad
Output Type: Fixed
Mounting Type: Surface Mount
Current - Output: 300mA
Operating Temperature: -40°C ~ 85°C
Output Configuration: Positive
Current - Quiescent (Iq): 2.2 µA
Voltage - Input (Max): 5.5V
Number of Regulators: 1
Supplier Device Package: 4-DFN (1x1)
Voltage - Output (Min/Fixed): 1.8V
Control Features: Current Limit, Enable
Voltage Dropout (Max): 0.445V @ 200mA
Protection Features: Over Current, Over Temperature
на замовлення 10000 шт:
термін постачання 21-31 дні (днів)
8+43.51 грн
13+24.62 грн
25+20.20 грн
100+14.30 грн
250+12.00 грн
500+10.58 грн
1000+9.24 грн
2500+7.98 грн
Мінімальне замовлення: 8
В кошику  од. на суму  грн.
TCR3LM33A,RF Toshiba Semiconductor and Storage docget.jsp?did=151501&prodName=TCR3LM33A Description: LDO IOUT: 300MA PD: 420MW VIN: 6
Packaging: Tape & Reel (TR)
Package / Case: 4-XDFN Exposed Pad
Output Type: Fixed
Mounting Type: Surface Mount
Current - Output: 300mA
Operating Temperature: -40°C ~ 85°C
Output Configuration: Positive
Current - Quiescent (Iq): 2.2 µA
Voltage - Input (Max): 5.5V
Number of Regulators: 1
Supplier Device Package: 4-DFN (1x1)
Voltage - Output (Min/Fixed): 3.3V
Control Features: Current Limit, Enable
Voltage Dropout (Max): 0.251V @ 200mA
Protection Features: Over Current, Over Temperature
на замовлення 10000 шт:
термін постачання 21-31 дні (днів)
5000+8.11 грн
10000+7.11 грн
Мінімальне замовлення: 5000
В кошику  од. на суму  грн.
TCR3LM33A,RF Toshiba Semiconductor and Storage docget.jsp?did=151501&prodName=TCR3LM33A Description: LDO IOUT: 300MA PD: 420MW VIN: 6
Packaging: Cut Tape (CT)
Package / Case: 4-XDFN Exposed Pad
Output Type: Fixed
Mounting Type: Surface Mount
Current - Output: 300mA
Operating Temperature: -40°C ~ 85°C
Output Configuration: Positive
Current - Quiescent (Iq): 2.2 µA
Voltage - Input (Max): 5.5V
Number of Regulators: 1
Supplier Device Package: 4-DFN (1x1)
Voltage - Output (Min/Fixed): 3.3V
Control Features: Current Limit, Enable
Voltage Dropout (Max): 0.251V @ 200mA
Protection Features: Over Current, Over Temperature
на замовлення 10000 шт:
термін постачання 21-31 дні (днів)
8+43.51 грн
13+24.62 грн
25+20.20 грн
100+14.30 грн
250+12.00 грн
500+10.58 грн
1000+9.24 грн
2500+7.98 грн
Мінімальне замовлення: 8
В кошику  од. на суму  грн.
TC74HC4049AF(EL,F) TC74HC4049AF(EL,F) Toshiba Semiconductor and Storage docget.jsp?did=70208&prodName=TC74HC4049AF Description: IC BUFFER INVERTING 6V 16-SOP
Packaging: Tape & Reel (TR)
Package / Case: 16-SOIC (0.209", 5.30mm Width)
Output Type: Push-Pull
Mounting Type: Surface Mount
Number of Elements: 6
Logic Type: Buffer, Inverting
Operating Temperature: -40°C ~ 85°C (TA)
Voltage - Supply: 2V ~ 6V
Number of Bits per Element: 1
Current - Output High, Low: 7.8mA, 7.8mA
Supplier Device Package: 16-SOP
товару немає в наявності
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HN4A06J(TE85L,F) HN4A06J(TE85L,F) Toshiba Semiconductor and Storage HN4A06J.pdf Description: TRANS 2PNP 120V 100MA SMV
Packaging: Tape & Reel (TR)
Package / Case: SC-74A, SOT-753
Mounting Type: Surface Mount
Transistor Type: 2 PNP (Dual) Matched Pair, Common Emitter
Operating Temperature: 150°C (TJ)
Power - Max: 300mW
Current - Collector (Ic) (Max): 100mA
Voltage - Collector Emitter Breakdown (Max): 120V
Vce Saturation (Max) @ Ib, Ic: 300mV @ 1mA, 10mA
Current - Collector Cutoff (Max): 100nA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce: 200 @ 2mA, 6V
Frequency - Transition: 100MHz
Supplier Device Package: SMV
товару немає в наявності
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HN4C06J-BL(TE85L,F HN4C06J-BL(TE85L,F Toshiba Semiconductor and Storage Description: TRANS 2NPN 120V 100MA SMV
Packaging: Cut Tape (CT)
Package / Case: SC-74A, SOT-753
Mounting Type: Surface Mount
Transistor Type: 2 NPN (Dual) Common Emitter
Operating Temperature: 150°C (TJ)
Power - Max: 300mW
Current - Collector (Ic) (Max): 100mA
Voltage - Collector Emitter Breakdown (Max): 120V
Vce Saturation (Max) @ Ib, Ic: 300mV @ 1mA, 10mA
Current - Collector Cutoff (Max): 100nA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce: 200 @ 2mA, 6V
Frequency - Transition: 100MHz
Supplier Device Package: SMV
товару немає в наявності
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TLP241BP(D4TP5,E TLP241BP(D4TP5,E Toshiba Semiconductor and Storage Description: PHOTORELAY, OVP, OTP, ROHS; VDE
Packaging: Tape & Reel (TR)
Package / Case: 4-DIP (0.300", 7.62mm)
Output Type: DC
Mounting Type: Through Hole
Voltage - Input: 1.65VDC
Circuit: SPST-NO (1 Form A)
Operating Temperature: -40°C ~ 110°C
Termination Style: PC Pin
Load Current: 1.4 A
Approval Agency: cUR, UR, VDE
Supplier Device Package: 4-DIP
Voltage - Load: 0 V ~ 80 V
On-State Resistance (Max): 280 mOhms
товару немає в наявності
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TLP241BP(TP1,E TLP241BP(TP1,E Toshiba Semiconductor and Storage Description: PHOTORELAY, OVP, OTP, ROHS
Packaging: Tape & Reel (TR)
Package / Case: 4-DIP (0.300", 7.62mm)
Output Type: DC
Mounting Type: Through Hole
Voltage - Input: 1.65VDC
Circuit: SPST-NO (1 Form A)
Operating Temperature: -40°C ~ 110°C
Termination Style: PC Pin
Load Current: 1.4 A
Approval Agency: cUR, UR, VDE
Supplier Device Package: 4-DIP
Voltage - Load: 0 V ~ 80 V
On-State Resistance (Max): 280 mOhms
товару немає в наявності
В кошику  од. на суму  грн.
TLP241BP(TP5,E TLP241BP(TP5,E Toshiba Semiconductor and Storage Description: PHOTORELAY, OVP, OTP, ROHS
Packaging: Tape & Reel (TR)
Package / Case: 4-DIP (0.300", 7.62mm)
Output Type: DC
Mounting Type: Through Hole
Voltage - Input: 1.65VDC
Circuit: SPST-NO (1 Form A)
Operating Temperature: -40°C ~ 110°C
Termination Style: PC Pin
Load Current: 1.4 A
Approval Agency: cUR, UR, VDE
Supplier Device Package: 4-DIP
Voltage - Load: 0 V ~ 80 V
On-State Resistance (Max): 280 mOhms
товару немає в наявності
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TLP241BPF(TP4,E TLP241BPF(TP4,E Toshiba Semiconductor and Storage Description: PHOTORELAY, OVP, OTP, ROHS; WIDE
Packaging: Tape & Reel (TR)
Package / Case: 4-SMD, Gull Wing
Output Type: DC
Mounting Type: Surface Mount
Voltage - Input: 1.65VDC
Circuit: SPST-NO (1 Form A)
Operating Temperature: -40°C ~ 110°C
Termination Style: PC Pin
Load Current: 1.4 A
Approval Agency: cUR, UR, VDE
Supplier Device Package: 4-SMD
Voltage - Load: 0 V ~ 80 V
On-State Resistance (Max): 280 mOhms
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TLP241BPF(D4TP4E TLP241BPF(D4TP4E Toshiba Semiconductor and Storage Description: PHOTORELAY, OVP, OTP, ROHS; VDE;
Packaging: Tape & Reel (TR)
Package / Case: 4-SMD, Gull Wing
Output Type: DC
Mounting Type: Surface Mount
Voltage - Input: 1.65VDC
Circuit: SPST-NO (1 Form A)
Operating Temperature: -40°C ~ 110°C
Termination Style: PC Pin
Load Current: 1.4 A
Approval Agency: cUR, UR, VDE
Supplier Device Package: 4-SMD
Voltage - Load: 0 V ~ 80 V
On-State Resistance (Max): 280 mOhms
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TLP241BP(LF1,E TLP241BP(LF1,E Toshiba Semiconductor and Storage Description: PHOTORELAY, OVP, OTP, ROHS
Packaging: Tube
Package / Case: 4-SMD (0.300", 7.62mm)
Output Type: DC
Mounting Type: Surface Mount
Voltage - Input: 1.65VDC
Circuit: SPST-NO (1 Form A)
Operating Temperature: -40°C ~ 110°C
Termination Style: SMD (SMT) Tab
Load Current: 1.4 A
Approval Agency: cUR, UR, VDE
Supplier Device Package: 4-SMD
Voltage - Load: 0 V ~ 80 V
On-State Resistance (Max): 280 mOhms
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TLP241BP(LF5,E TLP241BP(LF5,E Toshiba Semiconductor and Storage Description: PHOTORELAY, OVP, OTP, ROHS
Packaging: Tube
Package / Case: 4-SMD, Gull Wing
Output Type: DC
Mounting Type: Surface Mount
Voltage - Input: 1.65VDC
Circuit: SPST-NO (1 Form A)
Operating Temperature: -40°C ~ 110°C
Termination Style: SMD (SMT) Tab
Load Current: 1.4 A
Approval Agency: cUR, UR, VDE
Supplier Device Package: 4-SMD
Voltage - Load: 0 V ~ 80 V
On-State Resistance (Max): 280 mOhms
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TLP241BP(D4LF5,E TLP241BP(D4LF5,E Toshiba Semiconductor and Storage Description: PHOTORELAY, OVP, OTP, ROHS; VDE
Packaging: Tube
Package / Case: 4-SMD, Gull Wing
Output Type: DC
Mounting Type: Surface Mount
Voltage - Input: 1.65VDC
Circuit: SPST-NO (1 Form A)
Operating Temperature: -40°C ~ 110°C
Termination Style: SMD (SMT) Tab
Load Current: 1.4 A
Approval Agency: cUR, UR, VDE
Supplier Device Package: 4-SMD
Voltage - Load: 0 V ~ 80 V
On-State Resistance (Max): 280 mOhms
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TLP241BPF(D4LF4E TLP241BPF(D4LF4E Toshiba Semiconductor and Storage Description: PHOTORELAY, OVP, OTP, ROHS; VDE;
Packaging: Tube
Package / Case: 4-SMD, Gull Wing
Output Type: DC
Mounting Type: Surface Mount
Voltage - Input: 1.65VDC
Circuit: SPST-NO (1 Form A)
Operating Temperature: -40°C ~ 110°C
Termination Style: Gull Wing
Load Current: 1.4 A
Approval Agency: cUR, UR, VDE
Supplier Device Package: 4-SMD
Voltage - Load: 0 V ~ 80 V
On-State Resistance (Max): 280 mOhms
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TLP241BP(D4LF1,E TLP241BP(D4LF1,E Toshiba Semiconductor and Storage Description: PHOTORELAY, OVP, OTP, ROHS; VDE
Packaging: Tube
Package / Case: 4-SMD (0.300", 7.62mm)
Output Type: DC
Mounting Type: Surface Mount
Voltage - Input: 1.65VDC
Circuit: SPST-NO (1 Form A)
Operating Temperature: -40°C ~ 110°C
Termination Style: SMD (SMT) Tab
Load Current: 1.4 A
Approval Agency: cUR, UR, VDE
Supplier Device Package: 4-SMD
Voltage - Load: 0 V ~ 80 V
On-State Resistance (Max): 280 mOhms
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TLP241BPF(D4,E TLP241BPF(D4,E Toshiba Semiconductor and Storage Description: PHOTORELAY, OVP, OTP, ROHS; VDE;
Packaging: Tube
Package / Case: 4-DIP (0.400", 10.16mm)
Output Type: DC
Mounting Type: Through Hole
Voltage - Input: 1.65VDC
Circuit: SPST-NO (1 Form A)
Operating Temperature: -40°C ~ 110°C
Termination Style: PC Pin
Load Current: 1.4 A
Approval Agency: cUR, UR, VDE
Supplier Device Package: 4-DIP
Voltage - Load: 0 V ~ 80 V
On-State Resistance (Max): 280 mOhms
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TLP241BP(E TLP241BP(E Toshiba Semiconductor and Storage Description: PHOTORELAY, OVP, OTP, ROHS
Packaging: Tube
Package / Case: 4-DIP (0.300", 7.62mm)
Output Type: DC
Mounting Type: Through Hole
Voltage - Input: 1.65VDC
Circuit: SPST-NO (1 Form A)
Operating Temperature: -40°C ~ 110°C
Termination Style: PC Pin
Load Current: 1.4 A
Approval Agency: cUR, UR, VDE
Supplier Device Package: 4-DIP
Voltage - Load: 0 V ~ 80 V
On-State Resistance (Max): 280 mOhms
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TLP241BPF(E TLP241BPF(E Toshiba Semiconductor and Storage Description: PHOTORELAY, OVP, OTP, ROHS; WIDE
Packaging: Tube
Package / Case: 4-DIP (0.400", 10.16mm)
Output Type: DC
Mounting Type: Through Hole
Voltage - Input: 1.65VDC
Circuit: SPST-NO (1 Form A)
Operating Temperature: -40°C ~ 110°C
Termination Style: PC Pin
Load Current: 1.4 A
Approval Agency: cUR, UR, VDE
Supplier Device Package: 4-DIP
Voltage - Load: 0 V ~ 80 V
On-State Resistance (Max): 280 mOhms
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TLP241BPF(LF4,E TLP241BPF(LF4,E Toshiba Semiconductor and Storage Description: PHOTORELAY, OVP, OTP, ROHS; WIDE
Packaging: Tube
Package / Case: 4-SMD, Gull Wing
Output Type: DC
Mounting Type: Surface Mount
Voltage - Input: 1.65VDC
Circuit: SPST-NO (1 Form A)
Operating Temperature: -40°C ~ 110°C
Termination Style: Gull Wing
Load Current: 1.4 A
Approval Agency: cUR, UR, VDE
Supplier Device Package: 4-SMD
Voltage - Load: 0 V ~ 80 V
On-State Resistance (Max): 280 mOhms
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TLP785(D4-GRH,F Toshiba Semiconductor and Storage TLP785_datasheet_en_20190311.pdf?did=10569&prodName=TLP785 Description: OPTOISOLATOR 5KV 1CH TRANS 4-DIP
Packaging: Tube
Package / Case: 4-DIP (0.300", 7.62mm)
Output Type: Transistor
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 110°C
Voltage - Forward (Vf) (Typ): 1.15V
Input Type: DC
Current - Output / Channel: 50mA
Voltage - Isolation: 5000Vrms
Current Transfer Ratio (Min): 150% @ 5mA
Vce Saturation (Max): 400mV
Current Transfer Ratio (Max): 300% @ 5mA
Supplier Device Package: 4-DIP
Voltage - Output (Max): 80V
Turn On / Turn Off Time (Typ): 3µs, 3µs
Rise / Fall Time (Typ): 2µs, 3µs
Number of Channels: 1
Current - DC Forward (If) (Max): 60 mA
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TC78H620FNG TC78H620FNG Toshiba Semiconductor and Storage TC78H620FNG_datasheet_en_20161125.pdf?did=35802&prodName=TC78H620FNG Description: IC MTRDRV UNIPLR 2.7-5.5V 16SSOP
Packaging: Tape & Reel (TR)
Package / Case: 16-LSSOP (0.173", 4.40mm Width)
Mounting Type: Surface Mount
Function: Driver - Fully Integrated, Control and Power Stage
Current - Output: 1A
Interface: Parallel
Operating Temperature: -20°C ~ 85°C (TA)
Output Configuration: Half Bridge (4)
Voltage - Supply: 2.7V ~ 5.5V
Applications: General Purpose
Technology: DMOS
Voltage - Load: 2.5V ~ 15V
Supplier Device Package: 16-SSOP
Motor Type - Stepper: Unipolar
Motor Type - AC, DC: Brushed DC
Step Resolution: 1, 1/2
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TC74VHC14FK(EL,K) TC74VHC14FK_datasheet_en_20190131.pdf?did=17593&prodName=TC74VHC14FK
TC74VHC14FK(EL,K)
Виробник: Toshiba Semiconductor and Storage
Description: IC INVERTER 6CH 1-INP 14VSSOP
Features: Schmitt Trigger
Packaging: Cut Tape (CT)
Package / Case: 14-VFSOP (0.118", 3.00mm Width)
Mounting Type: Surface Mount
Logic Type: Inverter
Operating Temperature: -40°C ~ 85°C
Voltage - Supply: 2V ~ 5.5V
Current - Output High, Low: 8mA, 8mA
Number of Inputs: 1
Supplier Device Package: 14-VSSOP
Input Logic Level - High: 2.2V ~ 3.85V
Input Logic Level - Low: 0.9V ~ 1.65V
Max Propagation Delay @ V, Max CL: 10.6ns @ 5V, 50pF
Number of Circuits: 6
Current - Quiescent (Max): 2 µA
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XPH1R104PS,L1XHQ docget.jsp?did=139827&prodName=XPH1R104PS
XPH1R104PS,L1XHQ
Виробник: Toshiba Semiconductor and Storage
Description: 40V UMOS9-H SOP ADVANCE
Packaging: Tape & Reel (TR)
Package / Case: 8-PowerVDFN
Mounting Type: Surface Mount
Operating Temperature: 175°C
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 120A (Ta)
Rds On (Max) @ Id, Vgs: 1.14mOhm @ 60A, 10V
Power Dissipation (Max): 3W (Ta), 132W (Tc)
Vgs(th) (Max) @ Id: 3V @ 500µA
Supplier Device Package: 8-SOP Advance (5x5)
Grade: Automotive
Drive Voltage (Max Rds On, Min Rds On): 6V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 40 V
Gate Charge (Qg) (Max) @ Vgs: 55 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 4560 pF @ 10 V
Qualification: AEC-Q101
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XPH1R104PS,L1XHQ docget.jsp?did=139827&prodName=XPH1R104PS
XPH1R104PS,L1XHQ
Виробник: Toshiba Semiconductor and Storage
Description: 40V UMOS9-H SOP ADVANCE
Packaging: Cut Tape (CT)
Package / Case: 8-PowerVDFN
Mounting Type: Surface Mount
Operating Temperature: 175°C
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 120A (Ta)
Rds On (Max) @ Id, Vgs: 1.14mOhm @ 60A, 10V
Power Dissipation (Max): 3W (Ta), 132W (Tc)
Vgs(th) (Max) @ Id: 3V @ 500µA
Supplier Device Package: 8-SOP Advance (5x5)
Grade: Automotive
Drive Voltage (Max Rds On, Min Rds On): 6V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 40 V
Gate Charge (Qg) (Max) @ Vgs: 55 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 4560 pF @ 10 V
Qualification: AEC-Q101
на замовлення 4750 шт:
термін постачання 21-31 дні (днів)
Кількість Ціна
3+131.32 грн
10+85.90 грн
100+61.48 грн
500+47.14 грн
1000+42.46 грн
Мінімальне замовлення: 3
В кошику  од. на суму  грн.
TCK1024G,LF TCK22946G_datasheet_en_20220609.pdf?did=36710&prodName=TCK22946G
TCK1024G,LF
Виробник: Toshiba Semiconductor and Storage
Description: IC PWR SWITCH P-CHAN 1:1 WCSP6E
Packaging: Tape & Reel (TR)
Features: Load Discharge
Package / Case: 6-UFBGA, WLCSP
Output Type: P-Channel
Mounting Type: Surface Mount
Number of Outputs: 1
Interface: On/Off
Switch Type: General Purpose
Operating Temperature: -40°C ~ 85°C (TA)
Output Configuration: High Side
Rds On (Typ): 31mOhm
Input Type: Non-Inverting
Voltage - Load: 1.4V ~ 5.5V
Current - Output (Max): 1.54A
Ratio - Input:Output: 1:1
Supplier Device Package: 6-WCSPE (0.80x1.2)
Fault Protection: Current Limiting (Fixed), Over Temperature, Reverse Current
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TCK1024G,LF TCK22946G_datasheet_en_20220609.pdf?did=36710&prodName=TCK22946G
TCK1024G,LF
Виробник: Toshiba Semiconductor and Storage
Description: IC PWR SWITCH P-CHAN 1:1 WCSP6E
Packaging: Cut Tape (CT)
Features: Load Discharge
Package / Case: 6-UFBGA, WLCSP
Output Type: P-Channel
Mounting Type: Surface Mount
Number of Outputs: 1
Interface: On/Off
Switch Type: General Purpose
Operating Temperature: -40°C ~ 85°C (TA)
Output Configuration: High Side
Rds On (Typ): 31mOhm
Input Type: Non-Inverting
Voltage - Load: 1.4V ~ 5.5V
Current - Output (Max): 1.54A
Ratio - Input:Output: 1:1
Supplier Device Package: 6-WCSPE (0.80x1.2)
Fault Protection: Current Limiting (Fixed), Over Temperature, Reverse Current
на замовлення 4448 шт:
термін постачання 21-31 дні (днів)
Кількість Ціна
6+59.05 грн
10+35.32 грн
100+22.85 грн
500+16.39 грн
1000+14.76 грн
2000+13.39 грн
Мінімальне замовлення: 6
В кошику  од. на суму  грн.
XCUZ30V,H3XHF(B docget.jsp?did=153645&prodName=XCUZ30V
XCUZ30V,H3XHF(B
Виробник: Toshiba Semiconductor and Storage
Description: TVS DIODE 23VWM 47.5VC USC
Packaging: Tape & Reel (TR)
Package / Case: SC-76, SOD-323
Mounting Type: Surface Mount
Type: Zener
Operating Temperature: 150°C (TJ)
Capacitance @ Frequency: 21pF @ 1MHz
Current - Peak Pulse (10/1000µs): 4A (8/20µs)
Voltage - Reverse Standoff (Typ): 23V (Max)
Supplier Device Package: USC
Unidirectional Channels: 1
Voltage - Breakdown (Min): 28V
Voltage - Clamping (Max) @ Ipp: 47.5V (Typ)
Power - Peak Pulse: 200W
Power Line Protection: No
Grade: Automotive
Qualification: AEC-Q101
на замовлення 6000 шт:
термін постачання 21-31 дні (днів)
Кількість Ціна
3000+2.51 грн
6000+2.16 грн
Мінімальне замовлення: 3000
В кошику  од. на суму  грн.
XCUZ30V,H3XHF(B docget.jsp?did=153645&prodName=XCUZ30V
XCUZ30V,H3XHF(B
Виробник: Toshiba Semiconductor and Storage
Description: TVS DIODE 23VWM 47.5VC USC
Packaging: Cut Tape (CT)
Package / Case: SC-76, SOD-323
Mounting Type: Surface Mount
Type: Zener
Operating Temperature: 150°C (TJ)
Capacitance @ Frequency: 21pF @ 1MHz
Current - Peak Pulse (10/1000µs): 4A (8/20µs)
Voltage - Reverse Standoff (Typ): 23V (Max)
Supplier Device Package: USC
Unidirectional Channels: 1
Voltage - Breakdown (Min): 28V
Voltage - Clamping (Max) @ Ipp: 47.5V (Typ)
Power - Peak Pulse: 200W
Power Line Protection: No
Grade: Automotive
Qualification: AEC-Q101
на замовлення 6000 шт:
термін постачання 21-31 дні (днів)
Кількість Ціна
25+12.43 грн
40+7.63 грн
100+4.72 грн
500+3.23 грн
1000+2.84 грн
Мінімальне замовлення: 25
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2SC4213-A(TE85L,F) 2SC4213_datasheet_en_20210625.pdf?did=19305&prodName=2SC4213
2SC4213-A(TE85L,F)
Виробник: Toshiba Semiconductor and Storage
Description: TRANS NPN 20V 0.3A SC-70
Packaging: Cut Tape (CT)
Package / Case: SC-70, SOT-323
Mounting Type: Surface Mount
Transistor Type: NPN
Operating Temperature: 125°C (TJ)
Vce Saturation (Max) @ Ib, Ic: 100mV @ 3mA, 30A
Current - Collector Cutoff (Max): 100nA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce: 200 @ 4mA, 2V
Frequency - Transition: 30MHz
Supplier Device Package: SC-70
Current - Collector (Ic) (Max): 300 mA
Voltage - Collector Emitter Breakdown (Max): 20 V
Power - Max: 100 mW
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XCUZ6V2,H3XHF(B docget.jsp?did=153645&prodName=XCUZ15V
XCUZ6V2,H3XHF(B
Виробник: Toshiba Semiconductor and Storage
Description: 6.2 V ZENER DIODEAEC-Q, SOD-323(
Packaging: Tape & Reel (TR)
Package / Case: SC-76, SOD-323
Mounting Type: Surface Mount
Type: Zener
Operating Temperature: 150°C (TJ)
Capacitance @ Frequency: 105pF @ 1MHz
Current - Peak Pulse (10/1000µs): 11A (8/20µs)
Voltage - Reverse Standoff (Typ): 3V (Max)
Supplier Device Package: USC
Unidirectional Channels: 1
Voltage - Breakdown (Min): 5.8V
Voltage - Clamping (Max) @ Ipp: 10V (Typ)
Power - Peak Pulse: 175W
Power Line Protection: No
Grade: Automotive
Qualification: AEC-Q101
на замовлення 3000 шт:
термін постачання 21-31 дні (днів)
Кількість Ціна
3000+2.28 грн
Мінімальне замовлення: 3000
В кошику  од. на суму  грн.
XCUZ6V2,H3XHF(B docget.jsp?did=153645&prodName=XCUZ15V
XCUZ6V2,H3XHF(B
Виробник: Toshiba Semiconductor and Storage
Description: 6.2 V ZENER DIODEAEC-Q, SOD-323(
Packaging: Cut Tape (CT)
Package / Case: SC-76, SOD-323
Mounting Type: Surface Mount
Type: Zener
Operating Temperature: 150°C (TJ)
Capacitance @ Frequency: 105pF @ 1MHz
Current - Peak Pulse (10/1000µs): 11A (8/20µs)
Voltage - Reverse Standoff (Typ): 3V (Max)
Supplier Device Package: USC
Unidirectional Channels: 1
Voltage - Breakdown (Min): 5.8V
Voltage - Clamping (Max) @ Ipp: 10V (Typ)
Power - Peak Pulse: 175W
Power Line Protection: No
Grade: Automotive
Qualification: AEC-Q101
на замовлення 5960 шт:
термін постачання 21-31 дні (днів)
Кількість Ціна
23+13.99 грн
37+8.16 грн
100+5.04 грн
500+3.45 грн
1000+3.03 грн
Мінімальне замовлення: 23
В кошику  од. на суму  грн.
TLP620M(BL-TP5,E TLP620M_datasheet_en_20250708.pdf?did=68743&prodName=TLP620M
TLP620M(BL-TP5,E
Виробник: Toshiba Semiconductor and Storage
Description: OPTOISOLATOR 5KV 1CH TRANS 4-SMD
Packaging: Tape & Reel (TR)
Package / Case: 4-SMD, Gull Wing
Output Type: Transistor
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 125°C
Voltage - Forward (Vf) (Typ): 1.25V
Input Type: AC, DC
Current - Output / Channel: 50mA
Voltage - Isolation: 5000Vrms
Current Transfer Ratio (Min): 50% @ 5mA
Vce Saturation (Max): 300mV
Current Transfer Ratio (Max): 600% @ 5mA
Supplier Device Package: 4-SMD
Voltage - Output (Max): 80V
Turn On / Turn Off Time (Typ): 3µs, 3µs
Rise / Fall Time (Typ): 2µs, 3µs
Number of Channels: 1
Current - DC Forward (If) (Max): 50 mA
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TLP620M(D4BLT5,E TLP620M_datasheet_en_20250708.pdf?did=68743&prodName=TLP620M
TLP620M(D4BLT5,E
Виробник: Toshiba Semiconductor and Storage
Description: OPTOISOLATOR 5KV 1CH TRANS 4-DIP
Packaging: Tape & Reel (TR)
Package / Case: 4-DIP (0.300", 7.62mm)
Output Type: Transistor
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 125°C
Voltage - Forward (Vf) (Typ): 1.25V
Input Type: AC, DC
Current - Output / Channel: 50mA
Voltage - Isolation: 5000Vrms
Current Transfer Ratio (Min): 50% @ 5mA
Vce Saturation (Max): 300mV
Current Transfer Ratio (Max): 600% @ 5mA
Supplier Device Package: 4-DIP
Voltage - Output (Max): 80V
Turn On / Turn Off Time (Typ): 3µs, 3µs
Rise / Fall Time (Typ): 2µs, 3µs
Number of Channels: 1
Current - DC Forward (If) (Max): 50 mA
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TLP620M(D4-TP5,E TLP620M_datasheet_en_20250708.pdf?did=68743&prodName=TLP620M
TLP620M(D4-TP5,E
Виробник: Toshiba Semiconductor and Storage
Description: OPTOISOLATOR 5KV 1CH TRANS 4-SMD
Packaging: Tape & Reel (TR)
Package / Case: 4-SMD, Gull Wing
Output Type: Transistor
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 125°C
Voltage - Forward (Vf) (Typ): 1.25V
Input Type: AC, DC
Current - Output / Channel: 50mA
Voltage - Isolation: 5000Vrms
Current Transfer Ratio (Min): 50% @ 5mA
Vce Saturation (Max): 300mV
Current Transfer Ratio (Max): 600% @ 5mA
Supplier Device Package: 4-SMD
Voltage - Output (Max): 80V
Turn On / Turn Off Time (Typ): 3µs, 3µs
Rise / Fall Time (Typ): 2µs, 3µs
Number of Channels: 1
Current - DC Forward (If) (Max): 50 mA
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TLP620M(D4BLT1,E TLP620M_datasheet_en_20250708.pdf?did=68743&prodName=TLP620M
TLP620M(D4BLT1,E
Виробник: Toshiba Semiconductor and Storage
Description: OPTOISOLATOR 5KV 1CH TRANS 4-DIP
Packaging: Tape & Reel (TR)
Package / Case: 4-DIP (0.300", 7.62mm)
Output Type: Transistor
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 125°C
Voltage - Forward (Vf) (Typ): 1.25V
Input Type: AC, DC
Current - Output / Channel: 50mA
Voltage - Isolation: 5000Vrms
Current Transfer Ratio (Min): 50% @ 5mA
Vce Saturation (Max): 300mV
Current Transfer Ratio (Max): 600% @ 5mA
Supplier Device Package: 4-DIP
Voltage - Output (Max): 80V
Turn On / Turn Off Time (Typ): 3µs, 3µs
Rise / Fall Time (Typ): 2µs, 3µs
Number of Channels: 1
Current - DC Forward (If) (Max): 50 mA
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TLP620M(D4GBT5,E TLP620M_datasheet_en_20250708.pdf?did=68743&prodName=TLP620M
TLP620M(D4GBT5,E
Виробник: Toshiba Semiconductor and Storage
Description: OPTOISOLATOR 5KV 1CH TRANS 4-DIP
Packaging: Tape & Reel (TR)
Package / Case: 4-DIP (0.300", 7.62mm)
Output Type: Transistor
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 125°C
Voltage - Forward (Vf) (Typ): 1.25V
Input Type: AC, DC
Current - Output / Channel: 50mA
Voltage - Isolation: 5000Vrms
Current Transfer Ratio (Min): 100% @ 5mA
Vce Saturation (Max): 300mV
Current Transfer Ratio (Max): 600% @ 5mA
Supplier Device Package: 4-DIP
Voltage - Output (Max): 80V
Turn On / Turn Off Time (Typ): 3µs, 3µs
Rise / Fall Time (Typ): 2µs, 3µs
Number of Channels: 1
Current - DC Forward (If) (Max): 50 mA
товару немає в наявності
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TLP620M(D4GRT5,E
Виробник: Toshiba Semiconductor and Storage
Description: OPTOISOLATOR 5KV 1CH TRANS 4-DIP
Packaging: Tape & Reel (TR)
Package / Case: 4-DIP (0.300", 7.62mm)
Output Type: Transistor
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 125°C
Voltage - Forward (Vf) (Typ): 1.25V
Input Type: AC, DC
Current - Output / Channel: 50mA
Voltage - Isolation: 5000Vrms
Current Transfer Ratio (Min): 50% @ 5mA
Vce Saturation (Max): 300mV
Current Transfer Ratio (Max): 600% @ 5mA
Supplier Device Package: 4-DIP
Voltage - Output (Max): 80V
Turn On / Turn Off Time (Typ): 3µs, 3µs
Rise / Fall Time (Typ): 2µs, 3µs
Number of Channels: 1
Current - DC Forward (If) (Max): 50 mA
товару немає в наявності
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TLP620M(D4GRT1,E TLP620M_datasheet_en_20250708.pdf?did=68743&prodName=TLP620M
TLP620M(D4GRT1,E
Виробник: Toshiba Semiconductor and Storage
Description: OPTOISOLATOR 5KV 1CH TRANS 4-DIP
Packaging: Tape & Reel (TR)
Package / Case: 4-DIP (0.300", 7.62mm)
Output Type: Transistor
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 125°C
Voltage - Forward (Vf) (Typ): 1.25V
Input Type: AC, DC
Current - Output / Channel: 50mA
Voltage - Isolation: 5000Vrms
Current Transfer Ratio (Min): 50% @ 5mA
Vce Saturation (Max): 300mV
Current Transfer Ratio (Max): 600% @ 5mA
Supplier Device Package: 4-DIP
Voltage - Output (Max): 80V
Turn On / Turn Off Time (Typ): 3µs, 3µs
Rise / Fall Time (Typ): 2µs, 3µs
Number of Channels: 1
Current - DC Forward (If) (Max): 50 mA
товару немає в наявності
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TLP620M(GR-TP1,E TLP620M_datasheet_en_20250708.pdf?did=68743&prodName=TLP620M
TLP620M(GR-TP1,E
Виробник: Toshiba Semiconductor and Storage
Description: OPTOISOLATOR 5KV 1CH TRANS 4-SMD
Packaging: Tape & Reel (TR)
Package / Case: 4-SMD (0.300", 7.62mm)
Output Type: Transistor
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 125°C
Voltage - Forward (Vf) (Typ): 1.25V
Input Type: AC, DC
Current - Output / Channel: 50mA
Voltage - Isolation: 5000Vrms
Current Transfer Ratio (Min): 50% @ 5mA
Vce Saturation (Max): 300mV
Current Transfer Ratio (Max): 600% @ 5mA
Supplier Device Package: 4-SMD
Voltage - Output (Max): 80V
Turn On / Turn Off Time (Typ): 3µs, 3µs
Rise / Fall Time (Typ): 2µs, 3µs
Number of Channels: 1
Current - DC Forward (If) (Max): 50 mA
товару немає в наявності
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TLP620M(D4Y-T1,E TLP620M_datasheet_en_20250708.pdf?did=68743&prodName=TLP620M
TLP620M(D4Y-T1,E
Виробник: Toshiba Semiconductor and Storage
Description: OPTOISOLATOR 5KV 1CH TRANS 4-DIP
Packaging: Tape & Reel (TR)
Package / Case: 4-DIP (0.300", 7.62mm)
Output Type: Transistor
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 125°C
Voltage - Forward (Vf) (Typ): 1.25V
Input Type: AC, DC
Current - Output / Channel: 50mA
Voltage - Isolation: 5000Vrms
Current Transfer Ratio (Min): 50% @ 5mA
Vce Saturation (Max): 300mV
Current Transfer Ratio (Max): 600% @ 5mA
Supplier Device Package: 4-DIP
Voltage - Output (Max): 80V
Turn On / Turn Off Time (Typ): 3µs, 3µs
Rise / Fall Time (Typ): 2µs, 3µs
Number of Channels: 1
Current - DC Forward (If) (Max): 50 mA
товару немає в наявності
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TLP620M(D4GBT1,E TLP620M_datasheet_en_20250708.pdf?did=68743&prodName=TLP620M
TLP620M(D4GBT1,E
Виробник: Toshiba Semiconductor and Storage
Description: OPTOISOLATOR 5KV 1CH TRANS 4-DIP
Packaging: Tape & Reel (TR)
Package / Case: 4-DIP (0.300", 7.62mm)
Output Type: Transistor
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 125°C
Voltage - Forward (Vf) (Typ): 1.25V
Input Type: AC, DC
Current - Output / Channel: 50mA
Voltage - Isolation: 5000Vrms
Current Transfer Ratio (Min): 100% @ 5mA
Vce Saturation (Max): 300mV
Current Transfer Ratio (Max): 600% @ 5mA
Supplier Device Package: 4-DIP
Voltage - Output (Max): 80V
Turn On / Turn Off Time (Typ): 3µs, 3µs
Rise / Fall Time (Typ): 2µs, 3µs
Number of Channels: 1
Current - DC Forward (If) (Max): 50 mA
товару немає в наявності
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TLP620M(BL-TP1,E
Виробник: Toshiba Semiconductor and Storage
Description: OPTOISOLATOR 5KV 1CH TRANS 4-SMD
Packaging: Tape & Reel (TR)
Package / Case: 4-SMD (0.300", 7.62mm)
Output Type: Transistor
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 125°C
Voltage - Forward (Vf) (Typ): 1.25V
Input Type: AC, DC
Current - Output / Channel: 50mA
Voltage - Isolation: 5000Vrms
Current Transfer Ratio (Min): 50% @ 5mA
Vce Saturation (Max): 300mV
Current Transfer Ratio (Max): 600% @ 5mA
Supplier Device Package: 4-SMD
Voltage - Output (Max): 80V
Turn On / Turn Off Time (Typ): 3µs, 3µs
Rise / Fall Time (Typ): 2µs, 3µs
Number of Channels: 1
Current - DC Forward (If) (Max): 50 mA
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TLP620M(GB-TP5,E TLP620M_datasheet_en_20250708.pdf?did=68743&prodName=TLP620M
TLP620M(GB-TP5,E
Виробник: Toshiba Semiconductor and Storage
Description: OPTOISOLATOR 5KV 1CH TRANS 4-SMD
Packaging: Tape & Reel (TR)
Package / Case: 4-SMD, Gull Wing
Output Type: Transistor
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 125°C
Voltage - Forward (Vf) (Typ): 1.25V
Input Type: AC, DC
Current - Output / Channel: 50mA
Voltage - Isolation: 5000Vrms
Current Transfer Ratio (Min): 100% @ 5mA
Vce Saturation (Max): 300mV
Current Transfer Ratio (Max): 600% @ 5mA
Supplier Device Package: 4-SMD
Voltage - Output (Max): 80V
Turn On / Turn Off Time (Typ): 3µs, 3µs
Rise / Fall Time (Typ): 2µs, 3µs
Number of Channels: 1
Current - DC Forward (If) (Max): 50 mA
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TLP620M(D4Y-T5,E TLP620M_datasheet_en_20250708.pdf?did=68743&prodName=TLP620M
TLP620M(D4Y-T5,E
Виробник: Toshiba Semiconductor and Storage
Description: OPTOISOLATOR 5KV 1CH TRANS 4-DIP
Packaging: Tape & Reel (TR)
Package / Case: 4-DIP (0.300", 7.62mm)
Output Type: Transistor
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 125°C
Voltage - Forward (Vf) (Typ): 1.25V
Input Type: AC, DC
Current - Output / Channel: 50mA
Voltage - Isolation: 5000Vrms
Current Transfer Ratio (Min): 50% @ 5mA
Vce Saturation (Max): 300mV
Current Transfer Ratio (Max): 600% @ 5mA
Supplier Device Package: 4-DIP
Voltage - Output (Max): 80V
Turn On / Turn Off Time (Typ): 3µs, 3µs
Rise / Fall Time (Typ): 2µs, 3µs
Number of Channels: 1
Current - DC Forward (If) (Max): 50 mA
товару немає в наявності
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RN1410,LF docget.jsp?did=18792&prodName=RN1410
RN1410,LF
Виробник: Toshiba Semiconductor and Storage
Description: TRANS PREBIAS NPN 50V SMINI
Packaging: Tape & Reel (TR)
Package / Case: TO-236-3, SC-59, SOT-23-3
Mounting Type: Surface Mount
Transistor Type: NPN - Pre-Biased
Vce Saturation (Max) @ Ib, Ic: 300mV @ 250µA, 5mA
Current - Collector Cutoff (Max): 100nA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce: 120 @ 1mA, 5V
Supplier Device Package: S-Mini
Current - Collector (Ic) (Max): 100 mA
Voltage - Collector Emitter Breakdown (Max): 50 V
Power - Max: 200 mW
Frequency - Transition: 250 MHz
Resistor - Base (R1): 4.7 kOhms
на замовлення 6000 шт:
термін постачання 21-31 дні (днів)
Кількість Ціна
3000+2.36 грн
6000+2.02 грн
Мінімальне замовлення: 3000
В кошику  од. на суму  грн.
RN1410,LF docget.jsp?did=18792&prodName=RN1410
RN1410,LF
Виробник: Toshiba Semiconductor and Storage
Description: TRANS PREBIAS NPN 50V SMINI
Packaging: Cut Tape (CT)
Package / Case: TO-236-3, SC-59, SOT-23-3
Mounting Type: Surface Mount
Transistor Type: NPN - Pre-Biased
Vce Saturation (Max) @ Ib, Ic: 300mV @ 250µA, 5mA
Current - Collector Cutoff (Max): 100nA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce: 120 @ 1mA, 5V
Supplier Device Package: S-Mini
Current - Collector (Ic) (Max): 100 mA
Voltage - Collector Emitter Breakdown (Max): 50 V
Power - Max: 200 mW
Frequency - Transition: 250 MHz
Resistor - Base (R1): 4.7 kOhms
на замовлення 10350 шт:
термін постачання 21-31 дні (днів)
Кількість Ціна
27+11.66 грн
43+7.03 грн
100+4.34 грн
500+2.96 грн
1000+2.59 грн
Мінімальне замовлення: 27
В кошику  од. на суму  грн.
TLP2370(E TLP2370_datasheet_en_20170609.pdf?did=30500&prodName=TLP2370
TLP2370(E
Виробник: Toshiba Semiconductor and Storage
Description: HIGH SPEED PHOTOCOUPLER; 5PIN SO
Packaging: Tube
Package / Case: 6-SOIC (0.179", 4.55mm Width), 5 Leads
Output Type: Push-Pull, Totem Pole
Mounting Type: Surface Mount
Operating Temperature: -40°C ~ 125°C
Voltage - Supply: 2.7V ~ 5.5V
Voltage - Forward (Vf) (Typ): 1.5V
Data Rate: 20Mbps
Input Type: DC
Voltage - Isolation: 3750Vrms
Current - DC Forward (If) (Max): 8mA
Inputs - Side 1/Side 2: 1/0
Supplier Device Package: 6-SO, 5 Lead
Rise / Fall Time (Typ): 3ns, 2ns
Common Mode Transient Immunity (Min): 20kV/µs
Propagation Delay tpLH / tpHL (Max): 60ns, 60ns
Number of Channels: 1
Current - Output / Channel: 10 mA
на замовлення 125 шт:
термін постачання 21-31 дні (днів)
Кількість Ціна
3+133.65 грн
10+82.46 грн
125+57.05 грн
Мінімальне замовлення: 3
В кошику  од. на суму  грн.
RN1417,LF docget.jsp?did=18796&prodName=RN1415
RN1417,LF
Виробник: Toshiba Semiconductor and Storage
Description: TRANS PREBIAS NPN 50V 0.1A SMINI
Packaging: Tape & Reel (TR)
Package / Case: TO-236-3, SC-59, SOT-23-3
Mounting Type: Surface Mount
Transistor Type: NPN - Pre-Biased
Vce Saturation (Max) @ Ib, Ic: 300mV @ 250µA, 5mA
Current - Collector Cutoff (Max): 500nA
DC Current Gain (hFE) (Min) @ Ic, Vce: 30 @ 10mA, 5V
Supplier Device Package: S-Mini
Current - Collector (Ic) (Max): 100 mA
Voltage - Collector Emitter Breakdown (Max): 50 V
Power - Max: 200 mW
Frequency - Transition: 250 MHz
Resistor - Base (R1): 10 kOhms
Resistor - Emitter Base (R2): 4.7 kOhms
на замовлення 3000 шт:
термін постачання 21-31 дні (днів)
Кількість Ціна
3000+2.22 грн
Мінімальне замовлення: 3000
В кошику  од. на суму  грн.
RN1417,LF docget.jsp?did=18796&prodName=RN1415
RN1417,LF
Виробник: Toshiba Semiconductor and Storage
Description: TRANS PREBIAS NPN 50V 0.1A SMINI
Packaging: Cut Tape (CT)
Package / Case: TO-236-3, SC-59, SOT-23-3
Mounting Type: Surface Mount
Transistor Type: NPN - Pre-Biased
Vce Saturation (Max) @ Ib, Ic: 300mV @ 250µA, 5mA
Current - Collector Cutoff (Max): 500nA
DC Current Gain (hFE) (Min) @ Ic, Vce: 30 @ 10mA, 5V
Supplier Device Package: S-Mini
Current - Collector (Ic) (Max): 100 mA
Voltage - Collector Emitter Breakdown (Max): 50 V
Power - Max: 200 mW
Frequency - Transition: 250 MHz
Resistor - Base (R1): 10 kOhms
Resistor - Emitter Base (R2): 4.7 kOhms
на замовлення 4070 шт:
термін постачання 21-31 дні (днів)
Кількість Ціна
29+10.88 грн
45+6.66 грн
100+4.09 грн
500+2.79 грн
1000+2.44 грн
Мінімальне замовлення: 29
В кошику  од. на суму  грн.
RN1414,LF docget.jsp?did=18796&prodName=RN1415
RN1414,LF
Виробник: Toshiba Semiconductor and Storage
Description: TRANS PREBIAS NPN 50V 0.1A SMINI
Packaging: Tape & Reel (TR)
Package / Case: TO-236-3, SC-59, SOT-23-3
Mounting Type: Surface Mount
Transistor Type: NPN - Pre-Biased
Vce Saturation (Max) @ Ib, Ic: 300mV @ 250µA, 5mA
Current - Collector Cutoff (Max): 500nA
DC Current Gain (hFE) (Min) @ Ic, Vce: 50 @ 10mA, 5V
Supplier Device Package: S-Mini
Current - Collector (Ic) (Max): 100 mA
Voltage - Collector Emitter Breakdown (Max): 50 V
Power - Max: 200 mW
Frequency - Transition: 250 MHz
Resistor - Base (R1): 1 kOhms
Resistor - Emitter Base (R2): 10 kOhms
на замовлення 12000 шт:
термін постачання 21-31 дні (днів)
Кількість Ціна
3000+2.36 грн
6000+2.02 грн
9000+1.89 грн
Мінімальне замовлення: 3000
В кошику  од. на суму  грн.
RN1414,LF docget.jsp?did=18796&prodName=RN1415
RN1414,LF
Виробник: Toshiba Semiconductor and Storage
Description: TRANS PREBIAS NPN 50V 0.1A SMINI
Packaging: Cut Tape (CT)
Package / Case: TO-236-3, SC-59, SOT-23-3
Mounting Type: Surface Mount
Transistor Type: NPN - Pre-Biased
Vce Saturation (Max) @ Ib, Ic: 300mV @ 250µA, 5mA
Current - Collector Cutoff (Max): 500nA
DC Current Gain (hFE) (Min) @ Ic, Vce: 50 @ 10mA, 5V
Supplier Device Package: S-Mini
Current - Collector (Ic) (Max): 100 mA
Voltage - Collector Emitter Breakdown (Max): 50 V
Power - Max: 200 mW
Frequency - Transition: 250 MHz
Resistor - Base (R1): 1 kOhms
Resistor - Emitter Base (R2): 10 kOhms
на замовлення 14779 шт:
термін постачання 21-31 дні (днів)
Кількість Ціна
27+11.66 грн
43+7.03 грн
100+4.34 грн
500+2.96 грн
1000+2.59 грн
Мінімальне замовлення: 27
В кошику  од. на суму  грн.
RN1404,LF docget.jsp?did=18787&prodName=RN1401
RN1404,LF
Виробник: Toshiba Semiconductor and Storage
Description: TRANS PREBIAS NPN 50V 0.1A SMINI
Packaging: Tape & Reel (TR)
Package / Case: TO-236-3, SC-59, SOT-23-3
Mounting Type: Surface Mount
Transistor Type: NPN - Pre-Biased
Vce Saturation (Max) @ Ib, Ic: 300mV @ 250µA, 5mA
Current - Collector Cutoff (Max): 500nA
DC Current Gain (hFE) (Min) @ Ic, Vce: 80 @ 10mA, 5V
Supplier Device Package: S-Mini
Current - Collector (Ic) (Max): 100 mA
Voltage - Collector Emitter Breakdown (Max): 50 V
Power - Max: 200 mW
Frequency - Transition: 250 MHz
Resistor - Base (R1): 47 kOhms
Resistor - Emitter Base (R2): 47 kOhms
товару немає в наявності
В кошику  од. на суму  грн.
RN1404,LF docget.jsp?did=18787&prodName=RN1401
RN1404,LF
Виробник: Toshiba Semiconductor and Storage
Description: TRANS PREBIAS NPN 50V 0.1A SMINI
Packaging: Cut Tape (CT)
Package / Case: TO-236-3, SC-59, SOT-23-3
Mounting Type: Surface Mount
Transistor Type: NPN - Pre-Biased
Vce Saturation (Max) @ Ib, Ic: 300mV @ 250µA, 5mA
Current - Collector Cutoff (Max): 500nA
DC Current Gain (hFE) (Min) @ Ic, Vce: 80 @ 10mA, 5V
Supplier Device Package: S-Mini
Current - Collector (Ic) (Max): 100 mA
Voltage - Collector Emitter Breakdown (Max): 50 V
Power - Max: 200 mW
Frequency - Transition: 250 MHz
Resistor - Base (R1): 47 kOhms
Resistor - Emitter Base (R2): 47 kOhms
на замовлення 2413 шт:
термін постачання 21-31 дні (днів)
Кількість Ціна
23+13.99 грн
37+8.16 грн
100+5.04 грн
500+3.45 грн
1000+3.03 грн
Мінімальне замовлення: 23
В кошику  од. на суму  грн.
RN1415,LF
RN1415,LF
Виробник: Toshiba Semiconductor and Storage
Description: TRANS PREBIAS NPN 50V 0.1A SMINI
Packaging: Tape & Reel (TR)
Package / Case: TO-236-3, SC-59, SOT-23-3
Mounting Type: Surface Mount
Transistor Type: NPN - Pre-Biased
Vce Saturation (Max) @ Ib, Ic: 300mV @ 250µA, 5mA
Current - Collector Cutoff (Max): 500nA
DC Current Gain (hFE) (Min) @ Ic, Vce: 50 @ 10mA, 5V
Supplier Device Package: S-Mini
Current - Collector (Ic) (Max): 100 mA
Voltage - Collector Emitter Breakdown (Max): 50 V
Power - Max: 200 mW
Frequency - Transition: 250 MHz
Resistor - Base (R1): 2.2 kOhms
Resistor - Emitter Base (R2): 10 kOhms
на замовлення 3000 шт:
термін постачання 21-31 дні (днів)
Кількість Ціна
3000+2.22 грн
Мінімальне замовлення: 3000
В кошику  од. на суму  грн.
RN1415,LF
RN1415,LF
Виробник: Toshiba Semiconductor and Storage
Description: TRANS PREBIAS NPN 50V 0.1A SMINI
Packaging: Cut Tape (CT)
Package / Case: TO-236-3, SC-59, SOT-23-3
Mounting Type: Surface Mount
Transistor Type: NPN - Pre-Biased
Vce Saturation (Max) @ Ib, Ic: 300mV @ 250µA, 5mA
Current - Collector Cutoff (Max): 500nA
DC Current Gain (hFE) (Min) @ Ic, Vce: 50 @ 10mA, 5V
Supplier Device Package: S-Mini
Current - Collector (Ic) (Max): 100 mA
Voltage - Collector Emitter Breakdown (Max): 50 V
Power - Max: 200 mW
Frequency - Transition: 250 MHz
Resistor - Base (R1): 2.2 kOhms
Resistor - Emitter Base (R2): 10 kOhms
на замовлення 5406 шт:
термін постачання 21-31 дні (днів)
Кількість Ціна
27+11.66 грн
44+6.81 грн
100+4.22 грн
500+2.87 грн
1000+2.52 грн
Мінімальне замовлення: 27
В кошику  од. на суму  грн.
TLP3555A(LF1,F docget.jsp?did=61844&prodName=TLP3555A
TLP3555A(LF1,F
Виробник: Toshiba Semiconductor and Storage
Description: SSR RELAY SPST-NO 2.5A 0-40V
Packaging: Tube
Package / Case: 4-SMD (0.300", 7.62mm)
Output Type: AC, DC
Mounting Type: Surface Mount
Voltage - Input: 1.64VDC
Circuit: SPST-NO (1 Form A)
Operating Temperature: -40°C ~ 110°C
Termination Style: SMD (SMT) Tab
Load Current: 3 A
Approval Agency: CSA, cUL, UL, VDE
Supplier Device Package: 4-SMD
Voltage - Load: 0 V ~ 60 V
On-State Resistance (Max): 100 mOhms
товару немає в наявності
В кошику  од. на суму  грн.
TTB1020B,S4X(S TTB1020B_datasheet_en_20200129.pdf?did=13851&prodName=TTB1020B
Виробник: Toshiba Semiconductor and Storage
Description: TRANSISTOR PNP TO220
Packaging: Tube
товару немає в наявності
В кошику  од. на суму  грн.
TB62218AFTG,C8,EL TB62218AFTG_datasheet_en_20120312.pdf?did=13039&prodName=TB62218AFTG
TB62218AFTG,C8,EL
Виробник: Toshiba Semiconductor and Storage
Description: IC MTRDRV BIPLR 4.75-5.25V 48QFN
Packaging: Cut Tape (CT)
Package / Case: 48-VFQFN Exposed Pad
Mounting Type: Surface Mount
Function: Driver - Fully Integrated, Control and Power Stage
Current - Output: 2A
Interface: Parallel
Operating Temperature: -20°C ~ 150°C (TJ)
Output Configuration: Half Bridge (4)
Voltage - Supply: 4.75V ~ 5.25V
Applications: General Purpose
Technology: DMOS
Voltage - Load: 10V ~ 38V
Supplier Device Package: 48-QFN (7x7)
Motor Type - Stepper: Bipolar
Step Resolution: 1, 1/2, 1/4
на замовлення 2000 шт:
термін постачання 21-31 дні (днів)
Кількість Ціна
2+284.39 грн
10+175.84 грн
25+150.25 грн
100+113.86 грн
250+100.53 грн
500+92.33 грн
1000+84.07 грн
Мінімальне замовлення: 2
В кошику  од. на суму  грн.
TCR3LM18A,RF docget.jsp?did=151501&prodName=TCR3LM33A
Виробник: Toshiba Semiconductor and Storage
Description: LDO IOUT: 300MA PD: 420MW VIN: 6
Packaging: Tape & Reel (TR)
Package / Case: 4-XDFN Exposed Pad
Output Type: Fixed
Mounting Type: Surface Mount
Current - Output: 300mA
Operating Temperature: -40°C ~ 85°C
Output Configuration: Positive
Current - Quiescent (Iq): 2.2 µA
Voltage - Input (Max): 5.5V
Number of Regulators: 1
Supplier Device Package: 4-DFN (1x1)
Voltage - Output (Min/Fixed): 1.8V
Control Features: Current Limit, Enable
Voltage Dropout (Max): 0.445V @ 200mA
Protection Features: Over Current, Over Temperature
на замовлення 10000 шт:
термін постачання 21-31 дні (днів)
Кількість Ціна
5000+6.49 грн
10000+5.74 грн
Мінімальне замовлення: 5000
В кошику  од. на суму  грн.
TCR3LM18A,RF docget.jsp?did=151501&prodName=TCR3LM33A
Виробник: Toshiba Semiconductor and Storage
Description: LDO IOUT: 300MA PD: 420MW VIN: 6
Packaging: Cut Tape (CT)
Package / Case: 4-XDFN Exposed Pad
Output Type: Fixed
Mounting Type: Surface Mount
Current - Output: 300mA
Operating Temperature: -40°C ~ 85°C
Output Configuration: Positive
Current - Quiescent (Iq): 2.2 µA
Voltage - Input (Max): 5.5V
Number of Regulators: 1
Supplier Device Package: 4-DFN (1x1)
Voltage - Output (Min/Fixed): 1.8V
Control Features: Current Limit, Enable
Voltage Dropout (Max): 0.445V @ 200mA
Protection Features: Over Current, Over Temperature
на замовлення 10000 шт:
термін постачання 21-31 дні (днів)
Кількість Ціна
8+43.51 грн
13+24.62 грн
25+20.20 грн
100+14.30 грн
250+12.00 грн
500+10.58 грн
1000+9.24 грн
2500+7.98 грн
Мінімальне замовлення: 8
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TCR3LM33A,RF docget.jsp?did=151501&prodName=TCR3LM33A
Виробник: Toshiba Semiconductor and Storage
Description: LDO IOUT: 300MA PD: 420MW VIN: 6
Packaging: Tape & Reel (TR)
Package / Case: 4-XDFN Exposed Pad
Output Type: Fixed
Mounting Type: Surface Mount
Current - Output: 300mA
Operating Temperature: -40°C ~ 85°C
Output Configuration: Positive
Current - Quiescent (Iq): 2.2 µA
Voltage - Input (Max): 5.5V
Number of Regulators: 1
Supplier Device Package: 4-DFN (1x1)
Voltage - Output (Min/Fixed): 3.3V
Control Features: Current Limit, Enable
Voltage Dropout (Max): 0.251V @ 200mA
Protection Features: Over Current, Over Temperature
на замовлення 10000 шт:
термін постачання 21-31 дні (днів)
Кількість Ціна
5000+8.11 грн
10000+7.11 грн
Мінімальне замовлення: 5000
В кошику  од. на суму  грн.
TCR3LM33A,RF docget.jsp?did=151501&prodName=TCR3LM33A
Виробник: Toshiba Semiconductor and Storage
Description: LDO IOUT: 300MA PD: 420MW VIN: 6
Packaging: Cut Tape (CT)
Package / Case: 4-XDFN Exposed Pad
Output Type: Fixed
Mounting Type: Surface Mount
Current - Output: 300mA
Operating Temperature: -40°C ~ 85°C
Output Configuration: Positive
Current - Quiescent (Iq): 2.2 µA
Voltage - Input (Max): 5.5V
Number of Regulators: 1
Supplier Device Package: 4-DFN (1x1)
Voltage - Output (Min/Fixed): 3.3V
Control Features: Current Limit, Enable
Voltage Dropout (Max): 0.251V @ 200mA
Protection Features: Over Current, Over Temperature
на замовлення 10000 шт:
термін постачання 21-31 дні (днів)
Кількість Ціна
8+43.51 грн
13+24.62 грн
25+20.20 грн
100+14.30 грн
250+12.00 грн
500+10.58 грн
1000+9.24 грн
2500+7.98 грн
Мінімальне замовлення: 8
В кошику  од. на суму  грн.
TC74HC4049AF(EL,F) docget.jsp?did=70208&prodName=TC74HC4049AF
TC74HC4049AF(EL,F)
Виробник: Toshiba Semiconductor and Storage
Description: IC BUFFER INVERTING 6V 16-SOP
Packaging: Tape & Reel (TR)
Package / Case: 16-SOIC (0.209", 5.30mm Width)
Output Type: Push-Pull
Mounting Type: Surface Mount
Number of Elements: 6
Logic Type: Buffer, Inverting
Operating Temperature: -40°C ~ 85°C (TA)
Voltage - Supply: 2V ~ 6V
Number of Bits per Element: 1
Current - Output High, Low: 7.8mA, 7.8mA
Supplier Device Package: 16-SOP
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HN4A06J(TE85L,F) HN4A06J.pdf
HN4A06J(TE85L,F)
Виробник: Toshiba Semiconductor and Storage
Description: TRANS 2PNP 120V 100MA SMV
Packaging: Tape & Reel (TR)
Package / Case: SC-74A, SOT-753
Mounting Type: Surface Mount
Transistor Type: 2 PNP (Dual) Matched Pair, Common Emitter
Operating Temperature: 150°C (TJ)
Power - Max: 300mW
Current - Collector (Ic) (Max): 100mA
Voltage - Collector Emitter Breakdown (Max): 120V
Vce Saturation (Max) @ Ib, Ic: 300mV @ 1mA, 10mA
Current - Collector Cutoff (Max): 100nA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce: 200 @ 2mA, 6V
Frequency - Transition: 100MHz
Supplier Device Package: SMV
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HN4C06J-BL(TE85L,F
HN4C06J-BL(TE85L,F
Виробник: Toshiba Semiconductor and Storage
Description: TRANS 2NPN 120V 100MA SMV
Packaging: Cut Tape (CT)
Package / Case: SC-74A, SOT-753
Mounting Type: Surface Mount
Transistor Type: 2 NPN (Dual) Common Emitter
Operating Temperature: 150°C (TJ)
Power - Max: 300mW
Current - Collector (Ic) (Max): 100mA
Voltage - Collector Emitter Breakdown (Max): 120V
Vce Saturation (Max) @ Ib, Ic: 300mV @ 1mA, 10mA
Current - Collector Cutoff (Max): 100nA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce: 200 @ 2mA, 6V
Frequency - Transition: 100MHz
Supplier Device Package: SMV
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TLP241BP(D4TP5,E
TLP241BP(D4TP5,E
Виробник: Toshiba Semiconductor and Storage
Description: PHOTORELAY, OVP, OTP, ROHS; VDE
Packaging: Tape & Reel (TR)
Package / Case: 4-DIP (0.300", 7.62mm)
Output Type: DC
Mounting Type: Through Hole
Voltage - Input: 1.65VDC
Circuit: SPST-NO (1 Form A)
Operating Temperature: -40°C ~ 110°C
Termination Style: PC Pin
Load Current: 1.4 A
Approval Agency: cUR, UR, VDE
Supplier Device Package: 4-DIP
Voltage - Load: 0 V ~ 80 V
On-State Resistance (Max): 280 mOhms
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TLP241BP(TP1,E
TLP241BP(TP1,E
Виробник: Toshiba Semiconductor and Storage
Description: PHOTORELAY, OVP, OTP, ROHS
Packaging: Tape & Reel (TR)
Package / Case: 4-DIP (0.300", 7.62mm)
Output Type: DC
Mounting Type: Through Hole
Voltage - Input: 1.65VDC
Circuit: SPST-NO (1 Form A)
Operating Temperature: -40°C ~ 110°C
Termination Style: PC Pin
Load Current: 1.4 A
Approval Agency: cUR, UR, VDE
Supplier Device Package: 4-DIP
Voltage - Load: 0 V ~ 80 V
On-State Resistance (Max): 280 mOhms
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TLP241BP(TP5,E
TLP241BP(TP5,E
Виробник: Toshiba Semiconductor and Storage
Description: PHOTORELAY, OVP, OTP, ROHS
Packaging: Tape & Reel (TR)
Package / Case: 4-DIP (0.300", 7.62mm)
Output Type: DC
Mounting Type: Through Hole
Voltage - Input: 1.65VDC
Circuit: SPST-NO (1 Form A)
Operating Temperature: -40°C ~ 110°C
Termination Style: PC Pin
Load Current: 1.4 A
Approval Agency: cUR, UR, VDE
Supplier Device Package: 4-DIP
Voltage - Load: 0 V ~ 80 V
On-State Resistance (Max): 280 mOhms
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TLP241BPF(TP4,E
TLP241BPF(TP4,E
Виробник: Toshiba Semiconductor and Storage
Description: PHOTORELAY, OVP, OTP, ROHS; WIDE
Packaging: Tape & Reel (TR)
Package / Case: 4-SMD, Gull Wing
Output Type: DC
Mounting Type: Surface Mount
Voltage - Input: 1.65VDC
Circuit: SPST-NO (1 Form A)
Operating Temperature: -40°C ~ 110°C
Termination Style: PC Pin
Load Current: 1.4 A
Approval Agency: cUR, UR, VDE
Supplier Device Package: 4-SMD
Voltage - Load: 0 V ~ 80 V
On-State Resistance (Max): 280 mOhms
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TLP241BPF(D4TP4E
TLP241BPF(D4TP4E
Виробник: Toshiba Semiconductor and Storage
Description: PHOTORELAY, OVP, OTP, ROHS; VDE;
Packaging: Tape & Reel (TR)
Package / Case: 4-SMD, Gull Wing
Output Type: DC
Mounting Type: Surface Mount
Voltage - Input: 1.65VDC
Circuit: SPST-NO (1 Form A)
Operating Temperature: -40°C ~ 110°C
Termination Style: PC Pin
Load Current: 1.4 A
Approval Agency: cUR, UR, VDE
Supplier Device Package: 4-SMD
Voltage - Load: 0 V ~ 80 V
On-State Resistance (Max): 280 mOhms
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TLP241BP(LF1,E
TLP241BP(LF1,E
Виробник: Toshiba Semiconductor and Storage
Description: PHOTORELAY, OVP, OTP, ROHS
Packaging: Tube
Package / Case: 4-SMD (0.300", 7.62mm)
Output Type: DC
Mounting Type: Surface Mount
Voltage - Input: 1.65VDC
Circuit: SPST-NO (1 Form A)
Operating Temperature: -40°C ~ 110°C
Termination Style: SMD (SMT) Tab
Load Current: 1.4 A
Approval Agency: cUR, UR, VDE
Supplier Device Package: 4-SMD
Voltage - Load: 0 V ~ 80 V
On-State Resistance (Max): 280 mOhms
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TLP241BP(LF5,E
TLP241BP(LF5,E
Виробник: Toshiba Semiconductor and Storage
Description: PHOTORELAY, OVP, OTP, ROHS
Packaging: Tube
Package / Case: 4-SMD, Gull Wing
Output Type: DC
Mounting Type: Surface Mount
Voltage - Input: 1.65VDC
Circuit: SPST-NO (1 Form A)
Operating Temperature: -40°C ~ 110°C
Termination Style: SMD (SMT) Tab
Load Current: 1.4 A
Approval Agency: cUR, UR, VDE
Supplier Device Package: 4-SMD
Voltage - Load: 0 V ~ 80 V
On-State Resistance (Max): 280 mOhms
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TLP241BP(D4LF5,E
TLP241BP(D4LF5,E
Виробник: Toshiba Semiconductor and Storage
Description: PHOTORELAY, OVP, OTP, ROHS; VDE
Packaging: Tube
Package / Case: 4-SMD, Gull Wing
Output Type: DC
Mounting Type: Surface Mount
Voltage - Input: 1.65VDC
Circuit: SPST-NO (1 Form A)
Operating Temperature: -40°C ~ 110°C
Termination Style: SMD (SMT) Tab
Load Current: 1.4 A
Approval Agency: cUR, UR, VDE
Supplier Device Package: 4-SMD
Voltage - Load: 0 V ~ 80 V
On-State Resistance (Max): 280 mOhms
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TLP241BPF(D4LF4E
TLP241BPF(D4LF4E
Виробник: Toshiba Semiconductor and Storage
Description: PHOTORELAY, OVP, OTP, ROHS; VDE;
Packaging: Tube
Package / Case: 4-SMD, Gull Wing
Output Type: DC
Mounting Type: Surface Mount
Voltage - Input: 1.65VDC
Circuit: SPST-NO (1 Form A)
Operating Temperature: -40°C ~ 110°C
Termination Style: Gull Wing
Load Current: 1.4 A
Approval Agency: cUR, UR, VDE
Supplier Device Package: 4-SMD
Voltage - Load: 0 V ~ 80 V
On-State Resistance (Max): 280 mOhms
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TLP241BP(D4LF1,E
TLP241BP(D4LF1,E
Виробник: Toshiba Semiconductor and Storage
Description: PHOTORELAY, OVP, OTP, ROHS; VDE
Packaging: Tube
Package / Case: 4-SMD (0.300", 7.62mm)
Output Type: DC
Mounting Type: Surface Mount
Voltage - Input: 1.65VDC
Circuit: SPST-NO (1 Form A)
Operating Temperature: -40°C ~ 110°C
Termination Style: SMD (SMT) Tab
Load Current: 1.4 A
Approval Agency: cUR, UR, VDE
Supplier Device Package: 4-SMD
Voltage - Load: 0 V ~ 80 V
On-State Resistance (Max): 280 mOhms
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TLP241BPF(D4,E
TLP241BPF(D4,E
Виробник: Toshiba Semiconductor and Storage
Description: PHOTORELAY, OVP, OTP, ROHS; VDE;
Packaging: Tube
Package / Case: 4-DIP (0.400", 10.16mm)
Output Type: DC
Mounting Type: Through Hole
Voltage - Input: 1.65VDC
Circuit: SPST-NO (1 Form A)
Operating Temperature: -40°C ~ 110°C
Termination Style: PC Pin
Load Current: 1.4 A
Approval Agency: cUR, UR, VDE
Supplier Device Package: 4-DIP
Voltage - Load: 0 V ~ 80 V
On-State Resistance (Max): 280 mOhms
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TLP241BP(E
TLP241BP(E
Виробник: Toshiba Semiconductor and Storage
Description: PHOTORELAY, OVP, OTP, ROHS
Packaging: Tube
Package / Case: 4-DIP (0.300", 7.62mm)
Output Type: DC
Mounting Type: Through Hole
Voltage - Input: 1.65VDC
Circuit: SPST-NO (1 Form A)
Operating Temperature: -40°C ~ 110°C
Termination Style: PC Pin
Load Current: 1.4 A
Approval Agency: cUR, UR, VDE
Supplier Device Package: 4-DIP
Voltage - Load: 0 V ~ 80 V
On-State Resistance (Max): 280 mOhms
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TLP241BPF(E
TLP241BPF(E
Виробник: Toshiba Semiconductor and Storage
Description: PHOTORELAY, OVP, OTP, ROHS; WIDE
Packaging: Tube
Package / Case: 4-DIP (0.400", 10.16mm)
Output Type: DC
Mounting Type: Through Hole
Voltage - Input: 1.65VDC
Circuit: SPST-NO (1 Form A)
Operating Temperature: -40°C ~ 110°C
Termination Style: PC Pin
Load Current: 1.4 A
Approval Agency: cUR, UR, VDE
Supplier Device Package: 4-DIP
Voltage - Load: 0 V ~ 80 V
On-State Resistance (Max): 280 mOhms
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TLP241BPF(LF4,E
TLP241BPF(LF4,E
Виробник: Toshiba Semiconductor and Storage
Description: PHOTORELAY, OVP, OTP, ROHS; WIDE
Packaging: Tube
Package / Case: 4-SMD, Gull Wing
Output Type: DC
Mounting Type: Surface Mount
Voltage - Input: 1.65VDC
Circuit: SPST-NO (1 Form A)
Operating Temperature: -40°C ~ 110°C
Termination Style: Gull Wing
Load Current: 1.4 A
Approval Agency: cUR, UR, VDE
Supplier Device Package: 4-SMD
Voltage - Load: 0 V ~ 80 V
On-State Resistance (Max): 280 mOhms
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TLP785(D4-GRH,F TLP785_datasheet_en_20190311.pdf?did=10569&prodName=TLP785
Виробник: Toshiba Semiconductor and Storage
Description: OPTOISOLATOR 5KV 1CH TRANS 4-DIP
Packaging: Tube
Package / Case: 4-DIP (0.300", 7.62mm)
Output Type: Transistor
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 110°C
Voltage - Forward (Vf) (Typ): 1.15V
Input Type: DC
Current - Output / Channel: 50mA
Voltage - Isolation: 5000Vrms
Current Transfer Ratio (Min): 150% @ 5mA
Vce Saturation (Max): 400mV
Current Transfer Ratio (Max): 300% @ 5mA
Supplier Device Package: 4-DIP
Voltage - Output (Max): 80V
Turn On / Turn Off Time (Typ): 3µs, 3µs
Rise / Fall Time (Typ): 2µs, 3µs
Number of Channels: 1
Current - DC Forward (If) (Max): 60 mA
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TC78H620FNG TC78H620FNG_datasheet_en_20161125.pdf?did=35802&prodName=TC78H620FNG
TC78H620FNG
Виробник: Toshiba Semiconductor and Storage
Description: IC MTRDRV UNIPLR 2.7-5.5V 16SSOP
Packaging: Tape & Reel (TR)
Package / Case: 16-LSSOP (0.173", 4.40mm Width)
Mounting Type: Surface Mount
Function: Driver - Fully Integrated, Control and Power Stage
Current - Output: 1A
Interface: Parallel
Operating Temperature: -20°C ~ 85°C (TA)
Output Configuration: Half Bridge (4)
Voltage - Supply: 2.7V ~ 5.5V
Applications: General Purpose
Technology: DMOS
Voltage - Load: 2.5V ~ 15V
Supplier Device Package: 16-SSOP
Motor Type - Stepper: Unipolar
Motor Type - AC, DC: Brushed DC
Step Resolution: 1, 1/2
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