Продукція > TOSHIBA SEMICONDUCTOR AND STORAGE > Всі товари виробника TOSHIBA SEMICONDUCTOR AND STORAGE (13548) > Сторінка 223 з 226
| Фото | Назва | Виробник | Інформація |
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RN1304,LF | Toshiba Semiconductor and Storage |
Description: TRANS PREBIAS NPN 50V 0.1A SC70Resistors Included: R1 and R2 Resistor - Emitter Base (R2): 47 kOhms Resistor - Base (R1): 47 kOhms Frequency - Transition: 250 MHz Power - Max: 100 mW Voltage - Collector Emitter Breakdown (Max): 50 V Current - Collector (Ic) (Max): 100 mA Supplier Device Package: SC-70 DC Current Gain (hFE) (Min) @ Ic, Vce: 80 @ 10mA, 5V Current - Collector Cutoff (Max): 500nA Vce Saturation (Max) @ Ib, Ic: 300mV @ 250µA, 5mA Transistor Type: NPN - Pre-Biased Mounting Type: Surface Mount Package / Case: SC-70, SOT-323 Packaging: Tape & Reel (TR) |
товару немає в наявності |
Мінімальне замовлення: 3000 шт В кошику од. на суму грн. | ||||||||||||||||
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RN1304,LF | Toshiba Semiconductor and Storage |
Description: TRANS PREBIAS NPN 50V 0.1A SC70Current - Collector (Ic) (Max): 100 mA Supplier Device Package: SC-70 DC Current Gain (hFE) (Min) @ Ic, Vce: 80 @ 10mA, 5V Current - Collector Cutoff (Max): 500nA Vce Saturation (Max) @ Ib, Ic: 300mV @ 250µA, 5mA Transistor Type: NPN - Pre-Biased Mounting Type: Surface Mount Package / Case: SC-70, SOT-323 Packaging: Cut Tape (CT) Resistors Included: R1 and R2 Resistor - Emitter Base (R2): 47 kOhms Resistor - Base (R1): 47 kOhms Frequency - Transition: 250 MHz Power - Max: 100 mW Voltage - Collector Emitter Breakdown (Max): 50 V |
на замовлення 2540 шт: термін постачання 21-31 дні (днів) |
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TLP620M(Y-TP1,E | Toshiba Semiconductor and Storage |
Description: OPTOISOLATOR 5KV 1CH TRANS 4-SMD Packaging: Tape & Reel (TR) Package / Case: 4-SMD (0.300", 7.62mm) Output Type: Transistor Mounting Type: Surface Mount Operating Temperature: -55°C ~ 125°C Voltage - Forward (Vf) (Typ): 1.25V Input Type: AC, DC Current - Output / Channel: 50mA Voltage - Isolation: 5000Vrms Current Transfer Ratio (Min): 50% @ 5mA Vce Saturation (Max): 300mV Current Transfer Ratio (Max): 600% @ 5mA Supplier Device Package: 4-SMD Voltage - Output (Max): 80V Turn On / Turn Off Time (Typ): 3µs, 3µs Rise / Fall Time (Typ): 2µs, 3µs Number of Channels: 1 Current - DC Forward (If) (Max): 50 mA |
товару немає в наявності |
Мінімальне замовлення: 1500 шт В кошику од. на суму грн. | ||||||||||||||||
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TLP620M(TP5,E | Toshiba Semiconductor and Storage |
Description: OPTOISOLATOR 5KV 1CH TRANS 4-SMD Packaging: Tape & Reel (TR) Package / Case: 4-SMD, Gull Wing Output Type: Transistor Mounting Type: Surface Mount Operating Temperature: -55°C ~ 125°C Voltage - Forward (Vf) (Typ): 1.25V Input Type: AC, DC Current - Output / Channel: 50mA Voltage - Isolation: 5000Vrms Current Transfer Ratio (Min): 50% @ 5mA Vce Saturation (Max): 300mV Current Transfer Ratio (Max): 600% @ 5mA Supplier Device Package: 4-SMD Voltage - Output (Max): 80V Turn On / Turn Off Time (Typ): 3µs, 3µs Rise / Fall Time (Typ): 2µs, 3µs Number of Channels: 1 Current - DC Forward (If) (Max): 50 mA |
товару немає в наявності |
Мінімальне замовлення: 1500 шт В кошику од. на суму грн. | ||||||||||||||||
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TLP620M(Y-TP5,E | Toshiba Semiconductor and Storage |
Description: OPTOISOLATOR 5KV 1CH TRANS 4-SMD Packaging: Tape & Reel (TR) Package / Case: 4-SMD, Gull Wing Output Type: Transistor Mounting Type: Surface Mount Operating Temperature: -55°C ~ 125°C Voltage - Forward (Vf) (Typ): 1.25V Input Type: AC, DC Current - Output / Channel: 50mA Voltage - Isolation: 5000Vrms Current Transfer Ratio (Min): 50% @ 5mA Vce Saturation (Max): 300mV Current Transfer Ratio (Max): 600% @ 5mA Supplier Device Package: 4-SMD Voltage - Output (Max): 80V Turn On / Turn Off Time (Typ): 3µs, 3µs Rise / Fall Time (Typ): 2µs, 3µs Number of Channels: 1 Current - DC Forward (If) (Max): 50 mA |
товару немає в наявності |
Мінімальне замовлення: 1500 шт В кошику од. на суму грн. | ||||||||||||||||
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TLP620M(GR-TP5,E | Toshiba Semiconductor and Storage |
Description: OPTOISOLATOR 5KV 1CH TRANS 4-SMD Packaging: Tape & Reel (TR) Package / Case: 4-SMD, Gull Wing Output Type: Transistor Mounting Type: Surface Mount Operating Temperature: -55°C ~ 125°C Voltage - Forward (Vf) (Typ): 1.25V Input Type: AC, DC Current - Output / Channel: 50mA Voltage - Isolation: 5000Vrms Current Transfer Ratio (Min): 50% @ 5mA Vce Saturation (Max): 300mV Current Transfer Ratio (Max): 600% @ 5mA Supplier Device Package: 4-SMD Voltage - Output (Max): 80V Turn On / Turn Off Time (Typ): 3µs, 3µs Rise / Fall Time (Typ): 2µs, 3µs Number of Channels: 1 Current - DC Forward (If) (Max): 50 mA |
товару немає в наявності |
Мінімальне замовлення: 1500 шт В кошику од. на суму грн. | ||||||||||||||||
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TMPM380FWFG | Toshiba Semiconductor and Storage |
Description: IC MCU 32BIT 128KB FLASH 100LQFP Packaging: Tray Package / Case: 100-LQFP Mounting Type: Surface Mount Speed: 40MHz Program Memory Size: 128KB (128K x 8) RAM Size: 12K x 8 Operating Temperature: -40°C ~ 85°C (TA) Oscillator Type: External Program Memory Type: FLASH Core Processor: ARM® Cortex®-M3 Data Converters: A/D 18x12b Core Size: 32-Bit Voltage - Supply (Vcc/Vdd): 4V ~ 5.5V Connectivity: I2C, SIO, UART/USART Peripherals: DMA, LVD, WDT Supplier Device Package: 100-LQFP (14x14) Number of I/O: 83 DigiKey Programmable: Not Verified |
товару немає в наявності |
Мінімальне замовлення: 200 шт В кошику од. на суму грн. | ||||||||||||||||
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TPCC8093,L1Q | Toshiba Semiconductor and Storage |
Description: MOSFET N-CH 20V 21A 8TSON Packaging: Tape & Reel (TR) Package / Case: 8-PowerVDFN Mounting Type: Surface Mount Operating Temperature: 150°C Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 21A (Ta) Rds On (Max) @ Id, Vgs: 5.8mOhm @ 10.5A, 4.5V Power Dissipation (Max): 1.9W (Ta), 30W (Tc) Vgs(th) (Max) @ Id: 1.2V @ 500µA Supplier Device Package: 8-TSON Advance (3.1x3.1) Drive Voltage (Max Rds On, Min Rds On): 2.5V, 4.5V Vgs (Max): ±12V Drain to Source Voltage (Vdss): 20 V Gate Charge (Qg) (Max) @ Vgs: 16 nC @ 5 V Input Capacitance (Ciss) (Max) @ Vds: 1860 pF @ 10 V |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||||||||||
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TC7WPB9306FK,LF | Toshiba Semiconductor and Storage |
Description: IC BUS SWITCH 2 X 1:1 8-SSOPSupplier Device Package: 8-SSOP Voltage Supply Source: Dual Supply Independent Circuits: 1 Voltage - Supply: 1.65V ~ 5V, 2.3V ~ 5.5V Operating Temperature: -40°C ~ 85°C Type: Bus Switch Circuit: 2 x 1:1 Mounting Type: Surface Mount Package / Case: 8-VFSOP (0.091", 2.30mm Width) Packaging: Cut Tape (CT) |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||||||||||
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7UL1G34NX,ELF | Toshiba Semiconductor and Storage |
Description: 1 GATE LOGIC, BUFFER, XSON6, NONSupplier Device Package: 6-MP6D (1.45x1) Current - Output High, Low: 8mA, 8mA Number of Bits per Element: 1 Voltage - Supply: 0.9V ~ 3.6V Operating Temperature: -40°C ~ 85°C (TA) Logic Type: Buffer, Non-Inverting Number of Elements: 1 Mounting Type: Surface Mount Package / Case: 6-XFDFN Packaging: Tape & Reel (TR) |
на замовлення 5000 шт: термін постачання 21-31 дні (днів) |
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7UL1G34NX,ELF | Toshiba Semiconductor and Storage |
Description: 1 GATE LOGIC, BUFFER, XSON6, NONSupplier Device Package: 6-MP6D (1.45x1) Current - Output High, Low: 8mA, 8mA Number of Bits per Element: 1 Voltage - Supply: 0.9V ~ 3.6V Operating Temperature: -40°C ~ 85°C (TA) Logic Type: Buffer, Non-Inverting Number of Elements: 1 Mounting Type: Surface Mount Package / Case: 6-XFDFN Packaging: Cut Tape (CT) |
на замовлення 5000 шт: термін постачання 21-31 дні (днів) |
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| TMPM4NRF10XBG | Toshiba Semiconductor and Storage |
Description: MCU, DATA PROCESSING, ARM CORTEX Packaging: Tray |
товару немає в наявності |
Мінімальне замовлення: 1190 шт В кошику од. на суму грн. | |||||||||||||||||
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2SD2695,T6F(J | Toshiba Semiconductor and Storage |
Description: TRANS NPN 60V 2A TO-92MODPower - Max: 900 mW Voltage - Collector Emitter Breakdown (Max): 60 V Current - Collector (Ic) (Max): 2 A Supplier Device Package: TO-92MOD Frequency - Transition: 100MHz DC Current Gain (hFE) (Min) @ Ic, Vce: 2000 @ 1A, 2V Current - Collector Cutoff (Max): 10µA (ICBO) Vce Saturation (Max) @ Ib, Ic: 1.5V @ 1mA, 1A Operating Temperature: 150°C (TJ) Transistor Type: NPN Mounting Type: Through Hole Package / Case: TO-226-3, TO-92-3 Long Body Packaging: Bulk |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||||||||||
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TMPM4GNF10FG | Toshiba Semiconductor and Storage |
Description: IC MCU 32BIT 1MB FLASH 100LQFPVoltage - Supply (Vcc/Vdd): 2.7V ~ 3.6V Core Size: 32-Bit Data Converters: A/D 24x12b SAR; D/A 2x8b Core Processor: ARM® Cortex®-M4F EEPROM Size: 32K x 8 Program Memory Type: FLASH Oscillator Type: External, Internal Operating Temperature: -40°C ~ 85°C RAM Size: 256K x 8 Program Memory Size: 1MB (1M x 8) Speed: 200MHz Mounting Type: Surface Mount Package / Case: 100-LQFP Packaging: Tray DigiKey Programmable: Not Verified Number of I/O: 91 Supplier Device Package: 100-LQFP (14x14) Peripherals: DMA, I2S, LVD, POR, PWM, WDT Connectivity: EBI/EMI, FIFO, I2C, IrDA, SIO, SPI, UART/USART |
товару немає в наявності |
Мінімальне замовлення: 900 шт В кошику од. на суму грн. | ||||||||||||||||
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DCM340D01(AS,EL) | Toshiba Semiconductor and Storage |
Description: 4-CH (4:0) AECQ HIGH SPEED DIGITQualification: AEC-Q100 Number of Channels: 4 Grade: Automotive Pulse Width Distortion (Max): 5.1ns Channel Type: Unidirectional Isolated Power: No Propagation Delay tpLH / tpHL (Max): 18.4ns, 18.4ns Common Mode Transient Immunity (Min): 100kV/µs (Typ) Rise / Fall Time (Typ): 0.9ns, 0.9ns Supplier Device Package: 16-SOIC Inputs - Side 1/Side 2: 4/0 Voltage - Isolation: 5000Vrms Technology: Magnetic Coupling Data Rate: 50Mbps Voltage - Supply: 3V ~ 5.5V Operating Temperature: -40°C ~ 125°C Type: SPI Mounting Type: Surface Mount Package / Case: 16-SOIC (0.295", 7.50mm Width) Packaging: Tape & Reel (TR) |
на замовлення 1500 шт: термін постачання 21-31 дні (днів) |
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DCM340D01(AS,EL) | Toshiba Semiconductor and Storage |
Description: 4-CH (4:0) AECQ HIGH SPEED DIGITRise / Fall Time (Typ): 0.9ns, 0.9ns Supplier Device Package: 16-SOIC Inputs - Side 1/Side 2: 4/0 Voltage - Isolation: 5000Vrms Technology: Magnetic Coupling Data Rate: 50Mbps Voltage - Supply: 3V ~ 5.5V Operating Temperature: -40°C ~ 125°C Type: SPI Mounting Type: Surface Mount Package / Case: 16-SOIC (0.295", 7.50mm Width) Packaging: Cut Tape (CT) Qualification: AEC-Q100 Number of Channels: 4 Grade: Automotive Pulse Width Distortion (Max): 5.1ns Channel Type: Unidirectional Isolated Power: No Propagation Delay tpLH / tpHL (Max): 18.4ns, 18.4ns Common Mode Transient Immunity (Min): 100kV/µs (Typ) |
на замовлення 1500 шт: термін постачання 21-31 дні (днів) |
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TCB001HQ | Toshiba Semiconductor and Storage |
Description: AUDIO POWER AMPLIFIER, CLASS-AB,Max Output Power x Channels @ Load: 45W x 4 @ 4Ohm Voltage - Supply: 6V ~ 18V Operating Temperature: -40°C ~ 105°C (TA) Type: Class AB Output Type: 4-Channel (Quad) Supplier Device Package: 25-HZIP Mounting Type: Through Hole Package / Case: 25-SIP Formed Leads Packaging: Tube |
товару немає в наявності |
Мінімальне замовлення: 17 шт В кошику од. на суму грн. | ||||||||||||||||
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TB62D786FTG,EL | Toshiba Semiconductor and Storage |
Description: IC LED DRVR LIN PWM 40MA 24VQFN Packaging: Tape & Reel (TR) Package / Case: 24-VFQFN Exposed Pad Voltage - Output: 28V Mounting Type: Surface Mount Number of Outputs: 9 Type: Linear Operating Temperature: -40°C ~ 85°C (TA) Current - Output / Channel: 40mA Internal Switch(s): Yes Supplier Device Package: 24-VQFN (4x4) Dimming: PWM Voltage - Supply (Min): 7V Voltage - Supply (Max): 28V |
товару немає в наявності |
Мінімальне замовлення: 4000 шт В кошику од. на суму грн. | ||||||||||||||||
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TB62D786FTG,EL | Toshiba Semiconductor and Storage |
Description: IC LED DRVR LIN PWM 40MA 24VQFN Packaging: Cut Tape (CT) Package / Case: 24-VFQFN Exposed Pad Voltage - Output: 28V Mounting Type: Surface Mount Number of Outputs: 9 Type: Linear Operating Temperature: -40°C ~ 85°C (TA) Current - Output / Channel: 40mA Internal Switch(s): Yes Supplier Device Package: 24-VQFN (4x4) Dimming: PWM Voltage - Supply (Min): 7V Voltage - Supply (Max): 28V |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||||||||||
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TRS10H120H,S1Q | Toshiba Semiconductor and Storage |
Description: DIODE SIL CARB 1200V 38A TO2472LPackaging: Tube Package / Case: TO-247-2 Mounting Type: Through Hole Speed: No Recovery Time > 500mA (Io) Reverse Recovery Time (trr): 0 ns Technology: SiC (Silicon Carbide) Schottky Capacitance @ Vr, F: 1148pF @ 1V, 1MHz Current - Average Rectified (Io): 38A Supplier Device Package: TO-247-2L Operating Temperature - Junction: 175°C Voltage - DC Reverse (Vr) (Max): 1200 V Voltage - Forward (Vf) (Max) @ If: 1.45 V @ 10 A Current - Reverse Leakage @ Vr: 80 µA @ 1200 V |
на замовлення 40 шт: термін постачання 21-31 дні (днів) |
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TRS15H120H,S1Q | Toshiba Semiconductor and Storage |
Description: DIODE SIL CARB 1200V 50A TO2472LPackaging: Tube Package / Case: TO-247-2 Mounting Type: Through Hole Speed: No Recovery Time > 500mA (Io) Reverse Recovery Time (trr): 0 ns Technology: SiC (Silicon Carbide) Schottky Capacitance @ Vr, F: 1673pF @ 1V, 1MHz Current - Average Rectified (Io): 50A Supplier Device Package: TO-247-2L Operating Temperature - Junction: 175°C Voltage - DC Reverse (Vr) (Max): 1200 V Voltage - Forward (Vf) (Max) @ If: 1.45 V @ 15 A Current - Reverse Leakage @ Vr: 100 µA @ 1200 V |
на замовлення 60 шт: термін постачання 21-31 дні (днів) |
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TRS40H120H,S1Q | Toshiba Semiconductor and Storage |
Description: 1200 V/40 A SIC SCHOTTKY BARRIERPackaging: Tube Package / Case: TO-247-2 Mounting Type: Through Hole Speed: No Recovery Time > 500mA (Io) Reverse Recovery Time (trr): 0 ns Technology: SiC (Silicon Carbide) Schottky Capacitance @ Vr, F: 4368pF @ 1V, 1MHz Current - Average Rectified (Io): 102A Supplier Device Package: TO-247-2L Operating Temperature - Junction: 175°C Voltage - DC Reverse (Vr) (Max): 1200 V Voltage - Forward (Vf) (Max) @ If: 1.45 V @ 40 A Current - Reverse Leakage @ Vr: 230 µA @ 1.2 kV |
на замовлення 60 шт: термін постачання 21-31 дні (днів) |
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| TLP532(BLL,F) | Toshiba Semiconductor and Storage |
Description: PHOTOCOUPLER Packaging: Tube |
товару немає в наявності |
В кошику од. на суму грн. | |||||||||||||||||
| TLP373(F) | Toshiba Semiconductor and Storage |
Description: PHOTOCOUPLER Packaging: Tube |
товару немає в наявності |
В кошику од. на суму грн. | |||||||||||||||||
| 74LV4T125FT | Toshiba Semiconductor and Storage |
Description: TSSOP14 UNIDIRECTIONAL LEVEL SHIPackaging: Tape & Reel (TR) Package / Case: 14-TSSOP (0.173", 4.40mm Width) Output Type: 3-State Mounting Type: Surface Mount Number of Elements: 4 Logic Type: Buffer, Non-Inverting Operating Temperature: -40°C ~ 125°C (TA) Voltage - Supply: 1.65V ~ 5.5V Number of Bits per Element: 1 Current - Output High, Low: 16mA, 16mA Supplier Device Package: 14-TSSOP Grade: Automotive Qualification: AEC-Q100 |
товару немає в наявності |
Мінімальне замовлення: 2500 шт В кошику од. на суму грн. | |||||||||||||||||
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TLX9150M(TPL,F | Toshiba Semiconductor and Storage |
Description: PHOTORELAY 900V AEC-Q101Packaging: Tape & Reel (TR) Package / Case: 12-SOIC (0.295", 7.50mm Width), 8 Leads Output Type: AC Mounting Type: Surface Mount Voltage - Input: 1.65VDC Circuit: SPST-NO (1 Form A) Operating Temperature: -40°C ~ 125°C Load Current: 50 mA Supplier Device Package: 12-SO Grade: Automotive Voltage - Load: 0 V ~ 900 V On-State Resistance (Max): 250 Ohms Qualification: AEC-Q101 |
товару немає в наявності |
Мінімальне замовлення: 1500 шт В кошику од. на суму грн. | ||||||||||||||||
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TLX9150M(TPL,F | Toshiba Semiconductor and Storage |
Description: PHOTORELAY 900V AEC-Q101Packaging: Cut Tape (CT) Package / Case: 12-SOIC (0.295", 7.50mm Width), 8 Leads Output Type: AC Mounting Type: Surface Mount Voltage - Input: 1.65VDC Circuit: SPST-NO (1 Form A) Operating Temperature: -40°C ~ 125°C Load Current: 50 mA Supplier Device Package: 12-SO Grade: Automotive Voltage - Load: 0 V ~ 900 V On-State Resistance (Max): 250 Ohms Qualification: AEC-Q101 |
на замовлення 1375 шт: термін постачання 21-31 дні (днів) |
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TLP3450S(TP,E | Toshiba Semiconductor and Storage |
Description: PHOTORELAY LOW CRPackaging: Tape & Reel (TR) Package / Case: 4-SMD (0.079", 2.00mm) Output Type: DC Mounting Type: Surface Mount Voltage - Input: 1.24VDC Circuit: SPST-NO (1 Form A) Operating Temperature: -40°C ~ 110°C Load Current: 160 mA Supplier Device Package: S-VSON4T (2x1.45) Voltage - Load: 0 V ~ 20 V On-State Resistance (Max): 8.5 Ohms |
товару немає в наявності |
Мінімальне замовлення: 2500 шт В кошику од. на суму грн. | ||||||||||||||||
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TLP3450S(TP,E | Toshiba Semiconductor and Storage |
Description: PHOTORELAY LOW CRPackaging: Cut Tape (CT) Package / Case: 4-SMD (0.079", 2.00mm) Output Type: DC Mounting Type: Surface Mount Voltage - Input: 1.24VDC Circuit: SPST-NO (1 Form A) Operating Temperature: -40°C ~ 110°C Load Current: 160 mA Supplier Device Package: S-VSON4T (2x1.45) Voltage - Load: 0 V ~ 20 V On-State Resistance (Max): 8.5 Ohms |
на замовлення 1772 шт: термін постачання 21-31 дні (днів) |
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TLP3431S(TP,E | Toshiba Semiconductor and Storage |
Description: PHOTORELAY; FAST SWITCHING; ROHS Packaging: Tape & Reel (TR) Package / Case: 4-SMD (0.079", 2.00mm) Output Type: DC Mounting Type: Surface Mount Voltage - Input: 1.24VDC Circuit: SPST-NO (1 Form A) Operating Temperature: -40°C ~ 110°C Load Current: 450 mA Supplier Device Package: S-VSON4T (2x1.45) Voltage - Load: 0 V ~ 20 V On-State Resistance (Max): 1.2 Ohms |
товару немає в наявності |
Мінімальне замовлення: 2500 шт В кошику од. на суму грн. | ||||||||||||||||
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TLP3431S(TP,E | Toshiba Semiconductor and Storage |
Description: PHOTORELAY; FAST SWITCHING; ROHS Packaging: Cut Tape (CT) Package / Case: 4-SMD (0.079", 2.00mm) Output Type: DC Mounting Type: Surface Mount Voltage - Input: 1.24VDC Circuit: SPST-NO (1 Form A) Operating Temperature: -40°C ~ 110°C Load Current: 450 mA Supplier Device Package: S-VSON4T (2x1.45) Voltage - Load: 0 V ~ 20 V On-State Resistance (Max): 1.2 Ohms |
на замовлення 2340 шт: термін постачання 21-31 дні (днів) |
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TLX9152M(TPL,F | Toshiba Semiconductor and Storage |
Description: PHOTORELAY ROHS AEC-Q101Packaging: Tape & Reel (TR) Package / Case: 16-SOIC (0.295", 7.50mm Width) Output Type: DC Mounting Type: Surface Mount Voltage - Input: 1.65VDC Circuit: SPST-NO (1 Form A) Operating Temperature: -40°C ~ 125°C Load Current: 50 mA Supplier Device Package: 16-SO Grade: Automotive Voltage - Load: 0 V ~ 900 V On-State Resistance (Max): 400 Ohms Qualification: AEC-Q101 |
товару немає в наявності |
Мінімальне замовлення: 1500 шт В кошику од. на суму грн. | ||||||||||||||||
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TLX9152M(TPL,F | Toshiba Semiconductor and Storage |
Description: PHOTORELAY ROHS AEC-Q101Packaging: Cut Tape (CT) Package / Case: 16-SOIC (0.295", 7.50mm Width) Output Type: DC Mounting Type: Surface Mount Voltage - Input: 1.65VDC Circuit: SPST-NO (1 Form A) Operating Temperature: -40°C ~ 125°C Load Current: 50 mA Supplier Device Package: 16-SO Grade: Automotive Voltage - Load: 0 V ~ 900 V On-State Resistance (Max): 400 Ohms Qualification: AEC-Q101 |
на замовлення 1440 шт: термін постачання 21-31 дні (днів) |
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TLP3475W(TP,E | Toshiba Semiconductor and Storage |
Description: PHOTORELAY; HIGH FREQUENCY; ROHSPackaging: Tape & Reel (TR) Package / Case: 4-SMD (0.096", 2.45mm) Output Type: DC Mounting Type: Surface Mount Voltage - Input: 1.27VDC Circuit: SPST-NO (1 Form A) Operating Temperature: -40°C ~ 110°C Termination Style: SMD (SMT) Tab Load Current: 300 mA Supplier Device Package: 4-VSON (1.45x2.45) Voltage - Load: 0 V ~ 50 V On-State Resistance (Max): 1.5 Ohms |
на замовлення 3000 шт: термін постачання 21-31 дні (днів) |
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TLP3475W(TP,E | Toshiba Semiconductor and Storage |
Description: PHOTORELAY; HIGH FREQUENCY; ROHSPackaging: Cut Tape (CT) Package / Case: 4-SMD (0.096", 2.45mm) Output Type: DC Mounting Type: Surface Mount Voltage - Input: 1.27VDC Circuit: SPST-NO (1 Form A) Operating Temperature: -40°C ~ 110°C Termination Style: SMD (SMT) Tab Load Current: 300 mA Supplier Device Package: 4-VSON (1.45x2.45) Voltage - Load: 0 V ~ 50 V On-State Resistance (Max): 1.5 Ohms |
на замовлення 3880 шт: термін постачання 21-31 дні (днів) |
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| TLP3483(TP,E | Toshiba Semiconductor and Storage |
Description: PHOTORELAY Packaging: Tape & Reel (TR) Package / Case: 4-LDFN Output Type: DC Mounting Type: Surface Mount Voltage - Input: 1.2VDC Circuit: SPST-NO (1 Form A) Operating Temperature: -40°C ~ 110°C Load Current: 350 mA Supplier Device Package: S-VSON4T (3.4x2.1) Voltage - Load: 0 V ~ 200 V On-State Resistance (Max): 8 Ohms |
товару немає в наявності |
Мінімальне замовлення: 1500 шт В кошику од. на суму грн. | |||||||||||||||||
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TLP176D(TP,M,F) | Toshiba Semiconductor and Storage |
Description: PHOTORELAY MOSFET OUT 8-SOPPackaging: Tape & Reel (TR) Package / Case: 4-SOP (0.173", 4.40mm) Output Type: AC, DC Mounting Type: Surface Mount Voltage - Input: 1.15VDC Circuit: SPST-NO (1 Form A) Operating Temperature: -40°C ~ 85°C Termination Style: Gull Wing Load Current: 200 mA Approval Agency: cUL, UL, VDE Supplier Device Package: 4-SOP Voltage - Load: 0 V ~ 200 V On-State Resistance (Max): 8 Ohms |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||||||||||
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TLP223GA(F | Toshiba Semiconductor and Storage |
Description: PHOTORELAY 400V 6-DIPPackaging: Tube Package / Case: 4-DIP (0.300", 7.62mm) Output Type: AC, DC Mounting Type: Through Hole Voltage - Input: 1.27VDC Circuit: SPST-NO (1 Form A) Operating Temperature: -40°C ~ 110°C Termination Style: PC Pin Load Current: 120 mA Approval Agency: cUL, UL, VDE Supplier Device Package: 4-DIP Voltage - Load: 0 V ~ 400 V On-State Resistance (Max): 35 Ohms |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||||||||||
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TK4R9E15Q5,S1X | Toshiba Semiconductor and Storage |
Description: 150V UMOS10-HSD TO-220 4.9MOHMPackaging: Tube Package / Case: TO-220-3 Mounting Type: Through Hole Operating Temperature: 175°C Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 120A (Tc) Rds On (Max) @ Id, Vgs: 4.9mOhm @ 50A, 10V Power Dissipation (Max): 300W (Tc) Vgs(th) (Max) @ Id: 4.5V @ 2.2mA Supplier Device Package: TO-220 Drive Voltage (Max Rds On, Min Rds On): 8V, 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 150 V Gate Charge (Qg) (Max) @ Vgs: 96 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 7820 pF @ 75 V |
на замовлення 132 шт: термін постачання 21-31 дні (днів) |
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TK115N65Z5,S1F | Toshiba Semiconductor and Storage |
Description: N-CH MOSFET, 650 V, 0.115 @10V,Packaging: Tube Package / Case: TO-247-3 Mounting Type: Through Hole Operating Temperature: 150°C Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 24A (Ta) Rds On (Max) @ Id, Vgs: 115mOhm @ 12A, 10V Power Dissipation (Max): 190W (Tc) Vgs(th) (Max) @ Id: 4.5V @ 1.02mA Supplier Device Package: TO-247 Drive Voltage (Max Rds On, Min Rds On): 10V Vgs (Max): ±30V Drain to Source Voltage (Vdss): 650 V Gate Charge (Qg) (Max) @ Vgs: 42 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 2280 pF @ 300 V |
на замовлення 60 шт: термін постачання 21-31 дні (днів) |
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| TMPM366FYXBG | Toshiba Semiconductor and Storage |
Description: IC MCU 32BIT 256KB FLSH 109TFBGAPackaging: Tray Package / Case: 109-TFBGA Mounting Type: Surface Mount Speed: 48MHz Program Memory Size: 256KB (256K x 8) RAM Size: 48K x 8 Operating Temperature: -40°C ~ 85°C (TA) Oscillator Type: Internal Program Memory Type: FLASH Core Processor: ARM® Cortex®-M3 Data Converters: A/D 12x12b Core Size: 32-Bit Voltage - Supply (Vcc/Vdd): 2.7V ~ 3.6V Connectivity: I2C, SIO, SPI, UART/USART Peripherals: DMA, LVD, WDT Supplier Device Package: 109-TFBGA (9x9) Number of I/O: 73 DigiKey Programmable: Not Verified |
товару немає в наявності |
В кошику од. на суму грн. | |||||||||||||||||
| TMPM366FDXBG | Toshiba Semiconductor and Storage |
Description: IC MCU 32BIT 512KB FLSH 109TFBGAPackaging: Tray Package / Case: 109-TFBGA Mounting Type: Surface Mount Speed: 48MHz Program Memory Size: 512KB (512K x 8) RAM Size: 64K x 8 Operating Temperature: -40°C ~ 85°C (TA) Oscillator Type: Internal Program Memory Type: FLASH Core Processor: ARM® Cortex®-M3 Data Converters: A/D 12x12b Core Size: 32-Bit Voltage - Supply (Vcc/Vdd): 2.7V ~ 3.6V Connectivity: I2C, SIO, UART/USART Peripherals: DMA, PWM, WDT Supplier Device Package: 109-TFBGA (9x9) Number of I/O: 74 DigiKey Programmable: Not Verified |
товару немає в наявності |
В кошику од. на суму грн. | |||||||||||||||||
| TMPM37AFSQG,EL | Toshiba Semiconductor and Storage |
Description: IC MCU 32BIT 64KB FLASH 32VQFN DigiKey Programmable: Not Verified Number of I/O: 13 Supplier Device Package: 32-VQFN (5x5) Peripherals: POR, PWM, Voltage Detect, WDT Connectivity: I2C, SIO, UART/USART Voltage - Supply (Vcc/Vdd): 4.5V ~ 5.5V Core Size: 32-Bit Data Converters: A/D 5x12b SAR Core Processor: ARM® Cortex®-M3 Program Memory Type: FLASH Oscillator Type: External, Internal Operating Temperature: -40°C ~ 85°C RAM Size: 4K x 8 Program Memory Size: 64KB (64K x 8) Speed: 40MHz Mounting Type: Surface Mount Package / Case: 32-VFQFN Exposed Pad Packaging: Tape & Reel (TR) |
товару немає в наявності |
В кошику од. на суму грн. | |||||||||||||||||
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RN2418,LF | Toshiba Semiconductor and Storage |
Description: TRANS PREBIAS PNP 50V 0.1A SMINIPackaging: Tape & Reel (TR) Package / Case: TO-236-3, SC-59, SOT-23-3 Mounting Type: Surface Mount Transistor Type: PNP - Pre-Biased Vce Saturation (Max) @ Ib, Ic: 300mV @ 250µA, 5mA Current - Collector Cutoff (Max): 500nA DC Current Gain (hFE) (Min) @ Ic, Vce: 50 @ 10mA, 5V Supplier Device Package: S-Mini Current - Collector (Ic) (Max): 100 mA Voltage - Collector Emitter Breakdown (Max): 50 V Power - Max: 200 mW Frequency - Transition: 200 MHz Resistor - Base (R1): 47 kOhms Resistor - Emitter Base (R2): 10 kOhms Resistors Included: R1 and R2 |
товару немає в наявності |
Мінімальне замовлення: 3000 шт В кошику од. на суму грн. | ||||||||||||||||
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RN2418,LF | Toshiba Semiconductor and Storage |
Description: TRANS PREBIAS PNP 50V 0.1A SMINIPackaging: Cut Tape (CT) Package / Case: TO-236-3, SC-59, SOT-23-3 Mounting Type: Surface Mount Transistor Type: PNP - Pre-Biased Vce Saturation (Max) @ Ib, Ic: 300mV @ 250µA, 5mA Current - Collector Cutoff (Max): 500nA DC Current Gain (hFE) (Min) @ Ic, Vce: 50 @ 10mA, 5V Supplier Device Package: S-Mini Current - Collector (Ic) (Max): 100 mA Voltage - Collector Emitter Breakdown (Max): 50 V Power - Max: 200 mW Frequency - Transition: 200 MHz Resistor - Base (R1): 47 kOhms Resistor - Emitter Base (R2): 10 kOhms Resistors Included: R1 and R2 |
на замовлення 2947 шт: термін постачання 21-31 дні (днів) |
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RN1418,LF | Toshiba Semiconductor and Storage |
Description: TRANS PREBIAS NPN 50V 0.1A SMINIPackaging: Tape & Reel (TR) Package / Case: TO-236-3, SC-59, SOT-23-3 Mounting Type: Surface Mount Transistor Type: NPN - Pre-Biased Vce Saturation (Max) @ Ib, Ic: 300mV @ 250µA, 5mA Current - Collector Cutoff (Max): 500nA DC Current Gain (hFE) (Min) @ Ic, Vce: 50 @ 10mA, 5V Supplier Device Package: S-Mini Current - Collector (Ic) (Max): 100 mA Voltage - Collector Emitter Breakdown (Max): 50 V Power - Max: 200 mW Frequency - Transition: 250 MHz Resistor - Base (R1): 47 kOhms Resistor - Emitter Base (R2): 10 kOhms Resistors Included: R1 and R2 |
товару немає в наявності |
Мінімальне замовлення: 3000 шт В кошику од. на суму грн. | ||||||||||||||||
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RN1418,LF | Toshiba Semiconductor and Storage |
Description: TRANS PREBIAS NPN 50V 0.1A SMINIPackaging: Cut Tape (CT) Package / Case: TO-236-3, SC-59, SOT-23-3 Mounting Type: Surface Mount Transistor Type: NPN - Pre-Biased Vce Saturation (Max) @ Ib, Ic: 300mV @ 250µA, 5mA Current - Collector Cutoff (Max): 500nA DC Current Gain (hFE) (Min) @ Ic, Vce: 50 @ 10mA, 5V Supplier Device Package: S-Mini Current - Collector (Ic) (Max): 100 mA Voltage - Collector Emitter Breakdown (Max): 50 V Power - Max: 200 mW Frequency - Transition: 250 MHz Resistor - Base (R1): 47 kOhms Resistor - Emitter Base (R2): 10 kOhms Resistors Included: R1 and R2 |
на замовлення 171 шт: термін постачання 21-31 дні (днів) |
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74HC00D | Toshiba Semiconductor and Storage |
Description: IC GATE NAND 4CH 2-INP 14SOICPackaging: Tape & Reel (TR) Package / Case: 14-SOIC (0.154", 3.90mm Width) Mounting Type: Surface Mount Logic Type: NAND Gate Operating Temperature: -40°C ~ 125°C Voltage - Supply: 2V ~ 6V Current - Output High, Low: 5.2mA, 5.2mA Number of Inputs: 2 Supplier Device Package: 14-SOIC Input Logic Level - High: 1.5V ~ 4.2V Input Logic Level - Low: 0.5V ~ 1.8V Max Propagation Delay @ V, Max CL: 13ns @ 6V, 50pF Number of Circuits: 4 Current - Quiescent (Max): 1 µA |
на замовлення 2500 шт: термін постачання 21-31 дні (днів) |
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74HC00D | Toshiba Semiconductor and Storage |
Description: IC GATE NAND 4CH 2-INP 14SOICPackaging: Cut Tape (CT) Package / Case: 14-SOIC (0.154", 3.90mm Width) Mounting Type: Surface Mount Logic Type: NAND Gate Operating Temperature: -40°C ~ 125°C Voltage - Supply: 2V ~ 6V Current - Output High, Low: 5.2mA, 5.2mA Number of Inputs: 2 Supplier Device Package: 14-SOIC Input Logic Level - High: 1.5V ~ 4.2V Input Logic Level - Low: 0.5V ~ 1.8V Max Propagation Delay @ V, Max CL: 13ns @ 6V, 50pF Number of Circuits: 4 Current - Quiescent (Max): 1 µA |
на замовлення 4181 шт: термін постачання 21-31 дні (днів) |
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CMH07,LQ | Toshiba Semiconductor and Storage |
Description: 200 V/2 A RECTIFIER DIODE, M-FLAPackaging: Tape & Reel (TR) Package / Case: SOD-128 Mounting Type: Surface Mount Speed: Fast Recovery =< 500ns, > 200mA (Io) Reverse Recovery Time (trr): 100 ns Technology: Standard Current - Average Rectified (Io): 2A Supplier Device Package: M-FLAT (2.4x3.8) Operating Temperature - Junction: -40°C ~ 150°C Voltage - DC Reverse (Vr) (Max): 200 V Voltage - Forward (Vf) (Max) @ If: 980 mV @ 2 A Current - Reverse Leakage @ Vr: 10 µA @ 200 V |
на замовлення 6000 шт: термін постачання 21-31 дні (днів) |
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CMH07,LQ | Toshiba Semiconductor and Storage |
Description: 200 V/2 A RECTIFIER DIODE, M-FLAPackaging: Cut Tape (CT) Package / Case: SOD-128 Mounting Type: Surface Mount Speed: Fast Recovery =< 500ns, > 200mA (Io) Reverse Recovery Time (trr): 100 ns Technology: Standard Current - Average Rectified (Io): 2A Supplier Device Package: M-FLAT (2.4x3.8) Operating Temperature - Junction: -40°C ~ 150°C Voltage - DC Reverse (Vr) (Max): 200 V Voltage - Forward (Vf) (Max) @ If: 980 mV @ 2 A Current - Reverse Leakage @ Vr: 10 µA @ 200 V |
на замовлення 6000 шт: термін постачання 21-31 дні (днів) |
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TC74HC123AF | Toshiba Semiconductor and Storage |
Description: SOP16 DUAL MONOSTABLE MULTIVIBRAPackaging: Tape & Reel (TR) Package / Case: 16-SOIC (0.209", 5.30mm Width) Mounting Type: Surface Mount Logic Type: Monostable Operating Temperature: -40°C ~ 85°C Propagation Delay: 23 ns Independent Circuits: 2 Current - Output High, Low: 5.2mA, 5.2mA Schmitt Trigger Input: Yes Supplier Device Package: 16-SOP Voltage - Supply: 2 V ~ 6 V |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||||||||||
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TCR3LM50A,RF | Toshiba Semiconductor and Storage |
Description: OUTPUT LDO REGULATOR 300 MA FIXEPackaging: Tape & Reel (TR) Package / Case: 4-XDFN Exposed Pad Output Type: Fixed Mounting Type: Surface Mount Current - Output: 300mA Operating Temperature: -40°C ~ 85°C Output Configuration: Positive Current - Quiescent (Iq): 2.2 µA Voltage - Input (Max): 5.5V Number of Regulators: 1 Supplier Device Package: 4-DFN (1x1) Voltage - Output (Min/Fixed): 5V Control Features: Enable PSRR: 74dB ~ 43dB (100Hz ~ 100kHz) Voltage Dropout (Max): 0.205V @ 200mA Protection Features: Over Current, Over Temperature |
на замовлення 10000 шт: термін постачання 21-31 дні (днів) |
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TCR3LM50A,RF | Toshiba Semiconductor and Storage |
Description: OUTPUT LDO REGULATOR 300 MA FIXEPackaging: Cut Tape (CT) Package / Case: 4-XDFN Exposed Pad Output Type: Fixed Mounting Type: Surface Mount Current - Output: 300mA Operating Temperature: -40°C ~ 85°C Output Configuration: Positive Current - Quiescent (Iq): 2.2 µA Voltage - Input (Max): 5.5V Number of Regulators: 1 Supplier Device Package: 4-DFN (1x1) Voltage - Output (Min/Fixed): 5V Control Features: Enable PSRR: 74dB ~ 43dB (100Hz ~ 100kHz) Voltage Dropout (Max): 0.205V @ 200mA Protection Features: Over Current, Over Temperature |
на замовлення 10000 шт: термін постачання 21-31 дні (днів) |
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7UL3G34FK,LF | Toshiba Semiconductor and Storage |
Description: IC BUFFER NON-INVERTING 3.6V US8Supplier Device Package: US8 Current - Output High, Low: 8mA, 8mA Number of Bits per Element: 1 Voltage - Supply: 0.9V ~ 3.6V Operating Temperature: -40°C ~ 125°C (TA) Logic Type: Buffer, Non-Inverting Number of Elements: 3 Mounting Type: Surface Mount Package / Case: 8-VFSOP (0.091", 2.30mm Width) Packaging: Tape & Reel (TR) |
на замовлення 3000 шт: термін постачання 21-31 дні (днів) |
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7UL3G34FK,LF | Toshiba Semiconductor and Storage |
Description: IC BUFFER NON-INVERTING 3.6V US8Supplier Device Package: US8 Current - Output High, Low: 8mA, 8mA Number of Bits per Element: 1 Voltage - Supply: 0.9V ~ 3.6V Operating Temperature: -40°C ~ 125°C (TA) Logic Type: Buffer, Non-Inverting Number of Elements: 3 Mounting Type: Surface Mount Package / Case: 8-VFSOP (0.091", 2.30mm Width) Packaging: Cut Tape (CT) |
на замовлення 3856 шт: термін постачання 21-31 дні (днів) |
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2SC4738-Y,LXHF | Toshiba Semiconductor and Storage |
Description: NPN BIPOLAR TRANSISTOR 50V 0.15ATransistor Type: NPN Mounting Type: Surface Mount Package / Case: SC-75, SOT-416 Packaging: Tape & Reel (TR) Qualification: AEC-Q101 Power - Max: 120 mW Voltage - Collector Emitter Breakdown (Max): 50 V Current - Collector (Ic) (Max): 150 mA Grade: Automotive Supplier Device Package: SSM Frequency - Transition: 80MHz DC Current Gain (hFE) (Min) @ Ic, Vce: 120 @ 2mA, 6V Current - Collector Cutoff (Max): 100nA (ICBO) Vce Saturation (Max) @ Ib, Ic: 250mV @ 10mA, 100mA |
на замовлення 6000 шт: термін постачання 21-31 дні (днів) |
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2SC4738-Y,LXHF | Toshiba Semiconductor and Storage |
Description: NPN BIPOLAR TRANSISTOR 50V 0.15AQualification: AEC-Q101 Power - Max: 120 mW Voltage - Collector Emitter Breakdown (Max): 50 V Current - Collector (Ic) (Max): 150 mA Grade: Automotive Supplier Device Package: SSM Frequency - Transition: 80MHz DC Current Gain (hFE) (Min) @ Ic, Vce: 120 @ 2mA, 6V Current - Collector Cutoff (Max): 100nA (ICBO) Vce Saturation (Max) @ Ib, Ic: 250mV @ 10mA, 100mA Transistor Type: NPN Mounting Type: Surface Mount Package / Case: SC-75, SOT-416 Packaging: Cut Tape (CT) |
на замовлення 6000 шт: термін постачання 21-31 дні (днів) |
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RN1114MFV,L3F | Toshiba Semiconductor and Storage |
Description: TRANS PREBIAS NPN 50V 0.1A VESMResistors Included: R1 and R2 Resistor - Emitter Base (R2): 10 kOhms Resistor - Base (R1): 1 kOhms Frequency - Transition: 250 MHz Power - Max: 150 mW Voltage - Collector Emitter Breakdown (Max): 50 V Current - Collector (Ic) (Max): 100 mA Supplier Device Package: VESM DC Current Gain (hFE) (Min) @ Ic, Vce: 50 @ 10mA, 5V Current - Collector Cutoff (Max): 500nA Vce Saturation (Max) @ Ib, Ic: 300mV @ 250µA, 5mA Transistor Type: NPN - Pre-Biased Mounting Type: Surface Mount Package / Case: SOT-723 Packaging: Tape & Reel (TR) |
товару немає в наявності |
Мінімальне замовлення: 8000 шт В кошику од. на суму грн. | ||||||||||||||||
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RN1114MFV,L3F | Toshiba Semiconductor and Storage |
Description: TRANS PREBIAS NPN 50V 0.1A VESMPower - Max: 150 mW Voltage - Collector Emitter Breakdown (Max): 50 V Current - Collector (Ic) (Max): 100 mA Supplier Device Package: VESM DC Current Gain (hFE) (Min) @ Ic, Vce: 50 @ 10mA, 5V Current - Collector Cutoff (Max): 500nA Vce Saturation (Max) @ Ib, Ic: 300mV @ 250µA, 5mA Transistor Type: NPN - Pre-Biased Mounting Type: Surface Mount Package / Case: SOT-723 Packaging: Cut Tape (CT) Resistors Included: R1 and R2 Resistor - Emitter Base (R2): 10 kOhms Resistor - Base (R1): 1 kOhms Frequency - Transition: 250 MHz |
на замовлення 6394 шт: термін постачання 21-31 дні (днів) |
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| RN1304,LF |
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Виробник: Toshiba Semiconductor and Storage
Description: TRANS PREBIAS NPN 50V 0.1A SC70
Resistors Included: R1 and R2
Resistor - Emitter Base (R2): 47 kOhms
Resistor - Base (R1): 47 kOhms
Frequency - Transition: 250 MHz
Power - Max: 100 mW
Voltage - Collector Emitter Breakdown (Max): 50 V
Current - Collector (Ic) (Max): 100 mA
Supplier Device Package: SC-70
DC Current Gain (hFE) (Min) @ Ic, Vce: 80 @ 10mA, 5V
Current - Collector Cutoff (Max): 500nA
Vce Saturation (Max) @ Ib, Ic: 300mV @ 250µA, 5mA
Transistor Type: NPN - Pre-Biased
Mounting Type: Surface Mount
Package / Case: SC-70, SOT-323
Packaging: Tape & Reel (TR)
Description: TRANS PREBIAS NPN 50V 0.1A SC70
Resistors Included: R1 and R2
Resistor - Emitter Base (R2): 47 kOhms
Resistor - Base (R1): 47 kOhms
Frequency - Transition: 250 MHz
Power - Max: 100 mW
Voltage - Collector Emitter Breakdown (Max): 50 V
Current - Collector (Ic) (Max): 100 mA
Supplier Device Package: SC-70
DC Current Gain (hFE) (Min) @ Ic, Vce: 80 @ 10mA, 5V
Current - Collector Cutoff (Max): 500nA
Vce Saturation (Max) @ Ib, Ic: 300mV @ 250µA, 5mA
Transistor Type: NPN - Pre-Biased
Mounting Type: Surface Mount
Package / Case: SC-70, SOT-323
Packaging: Tape & Reel (TR)
товару немає в наявності
Мінімальне замовлення: 3000 шт
В кошику
од. на суму грн.
| RN1304,LF |
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Виробник: Toshiba Semiconductor and Storage
Description: TRANS PREBIAS NPN 50V 0.1A SC70
Current - Collector (Ic) (Max): 100 mA
Supplier Device Package: SC-70
DC Current Gain (hFE) (Min) @ Ic, Vce: 80 @ 10mA, 5V
Current - Collector Cutoff (Max): 500nA
Vce Saturation (Max) @ Ib, Ic: 300mV @ 250µA, 5mA
Transistor Type: NPN - Pre-Biased
Mounting Type: Surface Mount
Package / Case: SC-70, SOT-323
Packaging: Cut Tape (CT)
Resistors Included: R1 and R2
Resistor - Emitter Base (R2): 47 kOhms
Resistor - Base (R1): 47 kOhms
Frequency - Transition: 250 MHz
Power - Max: 100 mW
Voltage - Collector Emitter Breakdown (Max): 50 V
Description: TRANS PREBIAS NPN 50V 0.1A SC70
Current - Collector (Ic) (Max): 100 mA
Supplier Device Package: SC-70
DC Current Gain (hFE) (Min) @ Ic, Vce: 80 @ 10mA, 5V
Current - Collector Cutoff (Max): 500nA
Vce Saturation (Max) @ Ib, Ic: 300mV @ 250µA, 5mA
Transistor Type: NPN - Pre-Biased
Mounting Type: Surface Mount
Package / Case: SC-70, SOT-323
Packaging: Cut Tape (CT)
Resistors Included: R1 and R2
Resistor - Emitter Base (R2): 47 kOhms
Resistor - Base (R1): 47 kOhms
Frequency - Transition: 250 MHz
Power - Max: 100 mW
Voltage - Collector Emitter Breakdown (Max): 50 V
на замовлення 2540 шт:
термін постачання 21-31 дні (днів)
| Кількість | Ціна |
|---|---|
| 23+ | 14.27 грн |
| 38+ | 8.09 грн |
| 100+ | 4.99 грн |
| 500+ | 3.41 грн |
| 1000+ | 3.00 грн |
| TLP620M(Y-TP1,E |
Виробник: Toshiba Semiconductor and Storage
Description: OPTOISOLATOR 5KV 1CH TRANS 4-SMD
Packaging: Tape & Reel (TR)
Package / Case: 4-SMD (0.300", 7.62mm)
Output Type: Transistor
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 125°C
Voltage - Forward (Vf) (Typ): 1.25V
Input Type: AC, DC
Current - Output / Channel: 50mA
Voltage - Isolation: 5000Vrms
Current Transfer Ratio (Min): 50% @ 5mA
Vce Saturation (Max): 300mV
Current Transfer Ratio (Max): 600% @ 5mA
Supplier Device Package: 4-SMD
Voltage - Output (Max): 80V
Turn On / Turn Off Time (Typ): 3µs, 3µs
Rise / Fall Time (Typ): 2µs, 3µs
Number of Channels: 1
Current - DC Forward (If) (Max): 50 mA
Description: OPTOISOLATOR 5KV 1CH TRANS 4-SMD
Packaging: Tape & Reel (TR)
Package / Case: 4-SMD (0.300", 7.62mm)
Output Type: Transistor
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 125°C
Voltage - Forward (Vf) (Typ): 1.25V
Input Type: AC, DC
Current - Output / Channel: 50mA
Voltage - Isolation: 5000Vrms
Current Transfer Ratio (Min): 50% @ 5mA
Vce Saturation (Max): 300mV
Current Transfer Ratio (Max): 600% @ 5mA
Supplier Device Package: 4-SMD
Voltage - Output (Max): 80V
Turn On / Turn Off Time (Typ): 3µs, 3µs
Rise / Fall Time (Typ): 2µs, 3µs
Number of Channels: 1
Current - DC Forward (If) (Max): 50 mA
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Мінімальне замовлення: 1500 шт
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| TLP620M(TP5,E |
Виробник: Toshiba Semiconductor and Storage
Description: OPTOISOLATOR 5KV 1CH TRANS 4-SMD
Packaging: Tape & Reel (TR)
Package / Case: 4-SMD, Gull Wing
Output Type: Transistor
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 125°C
Voltage - Forward (Vf) (Typ): 1.25V
Input Type: AC, DC
Current - Output / Channel: 50mA
Voltage - Isolation: 5000Vrms
Current Transfer Ratio (Min): 50% @ 5mA
Vce Saturation (Max): 300mV
Current Transfer Ratio (Max): 600% @ 5mA
Supplier Device Package: 4-SMD
Voltage - Output (Max): 80V
Turn On / Turn Off Time (Typ): 3µs, 3µs
Rise / Fall Time (Typ): 2µs, 3µs
Number of Channels: 1
Current - DC Forward (If) (Max): 50 mA
Description: OPTOISOLATOR 5KV 1CH TRANS 4-SMD
Packaging: Tape & Reel (TR)
Package / Case: 4-SMD, Gull Wing
Output Type: Transistor
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 125°C
Voltage - Forward (Vf) (Typ): 1.25V
Input Type: AC, DC
Current - Output / Channel: 50mA
Voltage - Isolation: 5000Vrms
Current Transfer Ratio (Min): 50% @ 5mA
Vce Saturation (Max): 300mV
Current Transfer Ratio (Max): 600% @ 5mA
Supplier Device Package: 4-SMD
Voltage - Output (Max): 80V
Turn On / Turn Off Time (Typ): 3µs, 3µs
Rise / Fall Time (Typ): 2µs, 3µs
Number of Channels: 1
Current - DC Forward (If) (Max): 50 mA
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Мінімальне замовлення: 1500 шт
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| TLP620M(Y-TP5,E |
Виробник: Toshiba Semiconductor and Storage
Description: OPTOISOLATOR 5KV 1CH TRANS 4-SMD
Packaging: Tape & Reel (TR)
Package / Case: 4-SMD, Gull Wing
Output Type: Transistor
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 125°C
Voltage - Forward (Vf) (Typ): 1.25V
Input Type: AC, DC
Current - Output / Channel: 50mA
Voltage - Isolation: 5000Vrms
Current Transfer Ratio (Min): 50% @ 5mA
Vce Saturation (Max): 300mV
Current Transfer Ratio (Max): 600% @ 5mA
Supplier Device Package: 4-SMD
Voltage - Output (Max): 80V
Turn On / Turn Off Time (Typ): 3µs, 3µs
Rise / Fall Time (Typ): 2µs, 3µs
Number of Channels: 1
Current - DC Forward (If) (Max): 50 mA
Description: OPTOISOLATOR 5KV 1CH TRANS 4-SMD
Packaging: Tape & Reel (TR)
Package / Case: 4-SMD, Gull Wing
Output Type: Transistor
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 125°C
Voltage - Forward (Vf) (Typ): 1.25V
Input Type: AC, DC
Current - Output / Channel: 50mA
Voltage - Isolation: 5000Vrms
Current Transfer Ratio (Min): 50% @ 5mA
Vce Saturation (Max): 300mV
Current Transfer Ratio (Max): 600% @ 5mA
Supplier Device Package: 4-SMD
Voltage - Output (Max): 80V
Turn On / Turn Off Time (Typ): 3µs, 3µs
Rise / Fall Time (Typ): 2µs, 3µs
Number of Channels: 1
Current - DC Forward (If) (Max): 50 mA
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Мінімальне замовлення: 1500 шт
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| TLP620M(GR-TP5,E |
Виробник: Toshiba Semiconductor and Storage
Description: OPTOISOLATOR 5KV 1CH TRANS 4-SMD
Packaging: Tape & Reel (TR)
Package / Case: 4-SMD, Gull Wing
Output Type: Transistor
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 125°C
Voltage - Forward (Vf) (Typ): 1.25V
Input Type: AC, DC
Current - Output / Channel: 50mA
Voltage - Isolation: 5000Vrms
Current Transfer Ratio (Min): 50% @ 5mA
Vce Saturation (Max): 300mV
Current Transfer Ratio (Max): 600% @ 5mA
Supplier Device Package: 4-SMD
Voltage - Output (Max): 80V
Turn On / Turn Off Time (Typ): 3µs, 3µs
Rise / Fall Time (Typ): 2µs, 3µs
Number of Channels: 1
Current - DC Forward (If) (Max): 50 mA
Description: OPTOISOLATOR 5KV 1CH TRANS 4-SMD
Packaging: Tape & Reel (TR)
Package / Case: 4-SMD, Gull Wing
Output Type: Transistor
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 125°C
Voltage - Forward (Vf) (Typ): 1.25V
Input Type: AC, DC
Current - Output / Channel: 50mA
Voltage - Isolation: 5000Vrms
Current Transfer Ratio (Min): 50% @ 5mA
Vce Saturation (Max): 300mV
Current Transfer Ratio (Max): 600% @ 5mA
Supplier Device Package: 4-SMD
Voltage - Output (Max): 80V
Turn On / Turn Off Time (Typ): 3µs, 3µs
Rise / Fall Time (Typ): 2µs, 3µs
Number of Channels: 1
Current - DC Forward (If) (Max): 50 mA
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Мінімальне замовлення: 1500 шт
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| TMPM380FWFG |
Виробник: Toshiba Semiconductor and Storage
Description: IC MCU 32BIT 128KB FLASH 100LQFP
Packaging: Tray
Package / Case: 100-LQFP
Mounting Type: Surface Mount
Speed: 40MHz
Program Memory Size: 128KB (128K x 8)
RAM Size: 12K x 8
Operating Temperature: -40°C ~ 85°C (TA)
Oscillator Type: External
Program Memory Type: FLASH
Core Processor: ARM® Cortex®-M3
Data Converters: A/D 18x12b
Core Size: 32-Bit
Voltage - Supply (Vcc/Vdd): 4V ~ 5.5V
Connectivity: I2C, SIO, UART/USART
Peripherals: DMA, LVD, WDT
Supplier Device Package: 100-LQFP (14x14)
Number of I/O: 83
DigiKey Programmable: Not Verified
Description: IC MCU 32BIT 128KB FLASH 100LQFP
Packaging: Tray
Package / Case: 100-LQFP
Mounting Type: Surface Mount
Speed: 40MHz
Program Memory Size: 128KB (128K x 8)
RAM Size: 12K x 8
Operating Temperature: -40°C ~ 85°C (TA)
Oscillator Type: External
Program Memory Type: FLASH
Core Processor: ARM® Cortex®-M3
Data Converters: A/D 18x12b
Core Size: 32-Bit
Voltage - Supply (Vcc/Vdd): 4V ~ 5.5V
Connectivity: I2C, SIO, UART/USART
Peripherals: DMA, LVD, WDT
Supplier Device Package: 100-LQFP (14x14)
Number of I/O: 83
DigiKey Programmable: Not Verified
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Мінімальне замовлення: 200 шт
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| TPCC8093,L1Q |
Виробник: Toshiba Semiconductor and Storage
Description: MOSFET N-CH 20V 21A 8TSON
Packaging: Tape & Reel (TR)
Package / Case: 8-PowerVDFN
Mounting Type: Surface Mount
Operating Temperature: 150°C
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 21A (Ta)
Rds On (Max) @ Id, Vgs: 5.8mOhm @ 10.5A, 4.5V
Power Dissipation (Max): 1.9W (Ta), 30W (Tc)
Vgs(th) (Max) @ Id: 1.2V @ 500µA
Supplier Device Package: 8-TSON Advance (3.1x3.1)
Drive Voltage (Max Rds On, Min Rds On): 2.5V, 4.5V
Vgs (Max): ±12V
Drain to Source Voltage (Vdss): 20 V
Gate Charge (Qg) (Max) @ Vgs: 16 nC @ 5 V
Input Capacitance (Ciss) (Max) @ Vds: 1860 pF @ 10 V
Description: MOSFET N-CH 20V 21A 8TSON
Packaging: Tape & Reel (TR)
Package / Case: 8-PowerVDFN
Mounting Type: Surface Mount
Operating Temperature: 150°C
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 21A (Ta)
Rds On (Max) @ Id, Vgs: 5.8mOhm @ 10.5A, 4.5V
Power Dissipation (Max): 1.9W (Ta), 30W (Tc)
Vgs(th) (Max) @ Id: 1.2V @ 500µA
Supplier Device Package: 8-TSON Advance (3.1x3.1)
Drive Voltage (Max Rds On, Min Rds On): 2.5V, 4.5V
Vgs (Max): ±12V
Drain to Source Voltage (Vdss): 20 V
Gate Charge (Qg) (Max) @ Vgs: 16 nC @ 5 V
Input Capacitance (Ciss) (Max) @ Vds: 1860 pF @ 10 V
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| TC7WPB9306FK,LF |
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Виробник: Toshiba Semiconductor and Storage
Description: IC BUS SWITCH 2 X 1:1 8-SSOP
Supplier Device Package: 8-SSOP
Voltage Supply Source: Dual Supply
Independent Circuits: 1
Voltage - Supply: 1.65V ~ 5V, 2.3V ~ 5.5V
Operating Temperature: -40°C ~ 85°C
Type: Bus Switch
Circuit: 2 x 1:1
Mounting Type: Surface Mount
Package / Case: 8-VFSOP (0.091", 2.30mm Width)
Packaging: Cut Tape (CT)
Description: IC BUS SWITCH 2 X 1:1 8-SSOP
Supplier Device Package: 8-SSOP
Voltage Supply Source: Dual Supply
Independent Circuits: 1
Voltage - Supply: 1.65V ~ 5V, 2.3V ~ 5.5V
Operating Temperature: -40°C ~ 85°C
Type: Bus Switch
Circuit: 2 x 1:1
Mounting Type: Surface Mount
Package / Case: 8-VFSOP (0.091", 2.30mm Width)
Packaging: Cut Tape (CT)
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| 7UL1G34NX,ELF |
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Виробник: Toshiba Semiconductor and Storage
Description: 1 GATE LOGIC, BUFFER, XSON6, NON
Supplier Device Package: 6-MP6D (1.45x1)
Current - Output High, Low: 8mA, 8mA
Number of Bits per Element: 1
Voltage - Supply: 0.9V ~ 3.6V
Operating Temperature: -40°C ~ 85°C (TA)
Logic Type: Buffer, Non-Inverting
Number of Elements: 1
Mounting Type: Surface Mount
Package / Case: 6-XFDFN
Packaging: Tape & Reel (TR)
Description: 1 GATE LOGIC, BUFFER, XSON6, NON
Supplier Device Package: 6-MP6D (1.45x1)
Current - Output High, Low: 8mA, 8mA
Number of Bits per Element: 1
Voltage - Supply: 0.9V ~ 3.6V
Operating Temperature: -40°C ~ 85°C (TA)
Logic Type: Buffer, Non-Inverting
Number of Elements: 1
Mounting Type: Surface Mount
Package / Case: 6-XFDFN
Packaging: Tape & Reel (TR)
на замовлення 5000 шт:
термін постачання 21-31 дні (днів)
| Кількість | Ціна |
|---|---|
| 5000+ | 5.97 грн |
| 7UL1G34NX,ELF |
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Виробник: Toshiba Semiconductor and Storage
Description: 1 GATE LOGIC, BUFFER, XSON6, NON
Supplier Device Package: 6-MP6D (1.45x1)
Current - Output High, Low: 8mA, 8mA
Number of Bits per Element: 1
Voltage - Supply: 0.9V ~ 3.6V
Operating Temperature: -40°C ~ 85°C (TA)
Logic Type: Buffer, Non-Inverting
Number of Elements: 1
Mounting Type: Surface Mount
Package / Case: 6-XFDFN
Packaging: Cut Tape (CT)
Description: 1 GATE LOGIC, BUFFER, XSON6, NON
Supplier Device Package: 6-MP6D (1.45x1)
Current - Output High, Low: 8mA, 8mA
Number of Bits per Element: 1
Voltage - Supply: 0.9V ~ 3.6V
Operating Temperature: -40°C ~ 85°C (TA)
Logic Type: Buffer, Non-Inverting
Number of Elements: 1
Mounting Type: Surface Mount
Package / Case: 6-XFDFN
Packaging: Cut Tape (CT)
на замовлення 5000 шт:
термін постачання 21-31 дні (днів)
| Кількість | Ціна |
|---|---|
| 20+ | 15.86 грн |
| 30+ | 10.31 грн |
| 34+ | 9.10 грн |
| 100+ | 7.31 грн |
| 250+ | 6.71 грн |
| 500+ | 6.36 грн |
| 1000+ | 5.96 грн |
| 2500+ | 5.78 грн |
| TMPM4NRF10XBG |
Виробник: Toshiba Semiconductor and Storage
Description: MCU, DATA PROCESSING, ARM CORTEX
Packaging: Tray
Description: MCU, DATA PROCESSING, ARM CORTEX
Packaging: Tray
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Мінімальне замовлення: 1190 шт
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| 2SD2695,T6F(J |
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Виробник: Toshiba Semiconductor and Storage
Description: TRANS NPN 60V 2A TO-92MOD
Power - Max: 900 mW
Voltage - Collector Emitter Breakdown (Max): 60 V
Current - Collector (Ic) (Max): 2 A
Supplier Device Package: TO-92MOD
Frequency - Transition: 100MHz
DC Current Gain (hFE) (Min) @ Ic, Vce: 2000 @ 1A, 2V
Current - Collector Cutoff (Max): 10µA (ICBO)
Vce Saturation (Max) @ Ib, Ic: 1.5V @ 1mA, 1A
Operating Temperature: 150°C (TJ)
Transistor Type: NPN
Mounting Type: Through Hole
Package / Case: TO-226-3, TO-92-3 Long Body
Packaging: Bulk
Description: TRANS NPN 60V 2A TO-92MOD
Power - Max: 900 mW
Voltage - Collector Emitter Breakdown (Max): 60 V
Current - Collector (Ic) (Max): 2 A
Supplier Device Package: TO-92MOD
Frequency - Transition: 100MHz
DC Current Gain (hFE) (Min) @ Ic, Vce: 2000 @ 1A, 2V
Current - Collector Cutoff (Max): 10µA (ICBO)
Vce Saturation (Max) @ Ib, Ic: 1.5V @ 1mA, 1A
Operating Temperature: 150°C (TJ)
Transistor Type: NPN
Mounting Type: Through Hole
Package / Case: TO-226-3, TO-92-3 Long Body
Packaging: Bulk
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| TMPM4GNF10FG |
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Виробник: Toshiba Semiconductor and Storage
Description: IC MCU 32BIT 1MB FLASH 100LQFP
Voltage - Supply (Vcc/Vdd): 2.7V ~ 3.6V
Core Size: 32-Bit
Data Converters: A/D 24x12b SAR; D/A 2x8b
Core Processor: ARM® Cortex®-M4F
EEPROM Size: 32K x 8
Program Memory Type: FLASH
Oscillator Type: External, Internal
Operating Temperature: -40°C ~ 85°C
RAM Size: 256K x 8
Program Memory Size: 1MB (1M x 8)
Speed: 200MHz
Mounting Type: Surface Mount
Package / Case: 100-LQFP
Packaging: Tray
DigiKey Programmable: Not Verified
Number of I/O: 91
Supplier Device Package: 100-LQFP (14x14)
Peripherals: DMA, I2S, LVD, POR, PWM, WDT
Connectivity: EBI/EMI, FIFO, I2C, IrDA, SIO, SPI, UART/USART
Description: IC MCU 32BIT 1MB FLASH 100LQFP
Voltage - Supply (Vcc/Vdd): 2.7V ~ 3.6V
Core Size: 32-Bit
Data Converters: A/D 24x12b SAR; D/A 2x8b
Core Processor: ARM® Cortex®-M4F
EEPROM Size: 32K x 8
Program Memory Type: FLASH
Oscillator Type: External, Internal
Operating Temperature: -40°C ~ 85°C
RAM Size: 256K x 8
Program Memory Size: 1MB (1M x 8)
Speed: 200MHz
Mounting Type: Surface Mount
Package / Case: 100-LQFP
Packaging: Tray
DigiKey Programmable: Not Verified
Number of I/O: 91
Supplier Device Package: 100-LQFP (14x14)
Peripherals: DMA, I2S, LVD, POR, PWM, WDT
Connectivity: EBI/EMI, FIFO, I2C, IrDA, SIO, SPI, UART/USART
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Мінімальне замовлення: 900 шт
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| DCM340D01(AS,EL) |
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Виробник: Toshiba Semiconductor and Storage
Description: 4-CH (4:0) AECQ HIGH SPEED DIGIT
Qualification: AEC-Q100
Number of Channels: 4
Grade: Automotive
Pulse Width Distortion (Max): 5.1ns
Channel Type: Unidirectional
Isolated Power: No
Propagation Delay tpLH / tpHL (Max): 18.4ns, 18.4ns
Common Mode Transient Immunity (Min): 100kV/µs (Typ)
Rise / Fall Time (Typ): 0.9ns, 0.9ns
Supplier Device Package: 16-SOIC
Inputs - Side 1/Side 2: 4/0
Voltage - Isolation: 5000Vrms
Technology: Magnetic Coupling
Data Rate: 50Mbps
Voltage - Supply: 3V ~ 5.5V
Operating Temperature: -40°C ~ 125°C
Type: SPI
Mounting Type: Surface Mount
Package / Case: 16-SOIC (0.295", 7.50mm Width)
Packaging: Tape & Reel (TR)
Description: 4-CH (4:0) AECQ HIGH SPEED DIGIT
Qualification: AEC-Q100
Number of Channels: 4
Grade: Automotive
Pulse Width Distortion (Max): 5.1ns
Channel Type: Unidirectional
Isolated Power: No
Propagation Delay tpLH / tpHL (Max): 18.4ns, 18.4ns
Common Mode Transient Immunity (Min): 100kV/µs (Typ)
Rise / Fall Time (Typ): 0.9ns, 0.9ns
Supplier Device Package: 16-SOIC
Inputs - Side 1/Side 2: 4/0
Voltage - Isolation: 5000Vrms
Technology: Magnetic Coupling
Data Rate: 50Mbps
Voltage - Supply: 3V ~ 5.5V
Operating Temperature: -40°C ~ 125°C
Type: SPI
Mounting Type: Surface Mount
Package / Case: 16-SOIC (0.295", 7.50mm Width)
Packaging: Tape & Reel (TR)
на замовлення 1500 шт:
термін постачання 21-31 дні (днів)
| Кількість | Ціна |
|---|---|
| 1500+ | 126.14 грн |
| DCM340D01(AS,EL) |
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Виробник: Toshiba Semiconductor and Storage
Description: 4-CH (4:0) AECQ HIGH SPEED DIGIT
Rise / Fall Time (Typ): 0.9ns, 0.9ns
Supplier Device Package: 16-SOIC
Inputs - Side 1/Side 2: 4/0
Voltage - Isolation: 5000Vrms
Technology: Magnetic Coupling
Data Rate: 50Mbps
Voltage - Supply: 3V ~ 5.5V
Operating Temperature: -40°C ~ 125°C
Type: SPI
Mounting Type: Surface Mount
Package / Case: 16-SOIC (0.295", 7.50mm Width)
Packaging: Cut Tape (CT)
Qualification: AEC-Q100
Number of Channels: 4
Grade: Automotive
Pulse Width Distortion (Max): 5.1ns
Channel Type: Unidirectional
Isolated Power: No
Propagation Delay tpLH / tpHL (Max): 18.4ns, 18.4ns
Common Mode Transient Immunity (Min): 100kV/µs (Typ)
Description: 4-CH (4:0) AECQ HIGH SPEED DIGIT
Rise / Fall Time (Typ): 0.9ns, 0.9ns
Supplier Device Package: 16-SOIC
Inputs - Side 1/Side 2: 4/0
Voltage - Isolation: 5000Vrms
Technology: Magnetic Coupling
Data Rate: 50Mbps
Voltage - Supply: 3V ~ 5.5V
Operating Temperature: -40°C ~ 125°C
Type: SPI
Mounting Type: Surface Mount
Package / Case: 16-SOIC (0.295", 7.50mm Width)
Packaging: Cut Tape (CT)
Qualification: AEC-Q100
Number of Channels: 4
Grade: Automotive
Pulse Width Distortion (Max): 5.1ns
Channel Type: Unidirectional
Isolated Power: No
Propagation Delay tpLH / tpHL (Max): 18.4ns, 18.4ns
Common Mode Transient Immunity (Min): 100kV/µs (Typ)
на замовлення 1500 шт:
термін постачання 21-31 дні (днів)
| Кількість | Ціна |
|---|---|
| 2+ | 232.33 грн |
| 10+ | 167.75 грн |
| 25+ | 153.87 грн |
| 100+ | 130.04 грн |
| 250+ | 123.20 грн |
| 500+ | 119.08 грн |
| TCB001HQ |
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Виробник: Toshiba Semiconductor and Storage
Description: AUDIO POWER AMPLIFIER, CLASS-AB,
Max Output Power x Channels @ Load: 45W x 4 @ 4Ohm
Voltage - Supply: 6V ~ 18V
Operating Temperature: -40°C ~ 105°C (TA)
Type: Class AB
Output Type: 4-Channel (Quad)
Supplier Device Package: 25-HZIP
Mounting Type: Through Hole
Package / Case: 25-SIP Formed Leads
Packaging: Tube
Description: AUDIO POWER AMPLIFIER, CLASS-AB,
Max Output Power x Channels @ Load: 45W x 4 @ 4Ohm
Voltage - Supply: 6V ~ 18V
Operating Temperature: -40°C ~ 105°C (TA)
Type: Class AB
Output Type: 4-Channel (Quad)
Supplier Device Package: 25-HZIP
Mounting Type: Through Hole
Package / Case: 25-SIP Formed Leads
Packaging: Tube
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Мінімальне замовлення: 17 шт
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| TB62D786FTG,EL |
Виробник: Toshiba Semiconductor and Storage
Description: IC LED DRVR LIN PWM 40MA 24VQFN
Packaging: Tape & Reel (TR)
Package / Case: 24-VFQFN Exposed Pad
Voltage - Output: 28V
Mounting Type: Surface Mount
Number of Outputs: 9
Type: Linear
Operating Temperature: -40°C ~ 85°C (TA)
Current - Output / Channel: 40mA
Internal Switch(s): Yes
Supplier Device Package: 24-VQFN (4x4)
Dimming: PWM
Voltage - Supply (Min): 7V
Voltage - Supply (Max): 28V
Description: IC LED DRVR LIN PWM 40MA 24VQFN
Packaging: Tape & Reel (TR)
Package / Case: 24-VFQFN Exposed Pad
Voltage - Output: 28V
Mounting Type: Surface Mount
Number of Outputs: 9
Type: Linear
Operating Temperature: -40°C ~ 85°C (TA)
Current - Output / Channel: 40mA
Internal Switch(s): Yes
Supplier Device Package: 24-VQFN (4x4)
Dimming: PWM
Voltage - Supply (Min): 7V
Voltage - Supply (Max): 28V
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Мінімальне замовлення: 4000 шт
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| TB62D786FTG,EL |
Виробник: Toshiba Semiconductor and Storage
Description: IC LED DRVR LIN PWM 40MA 24VQFN
Packaging: Cut Tape (CT)
Package / Case: 24-VFQFN Exposed Pad
Voltage - Output: 28V
Mounting Type: Surface Mount
Number of Outputs: 9
Type: Linear
Operating Temperature: -40°C ~ 85°C (TA)
Current - Output / Channel: 40mA
Internal Switch(s): Yes
Supplier Device Package: 24-VQFN (4x4)
Dimming: PWM
Voltage - Supply (Min): 7V
Voltage - Supply (Max): 28V
Description: IC LED DRVR LIN PWM 40MA 24VQFN
Packaging: Cut Tape (CT)
Package / Case: 24-VFQFN Exposed Pad
Voltage - Output: 28V
Mounting Type: Surface Mount
Number of Outputs: 9
Type: Linear
Operating Temperature: -40°C ~ 85°C (TA)
Current - Output / Channel: 40mA
Internal Switch(s): Yes
Supplier Device Package: 24-VQFN (4x4)
Dimming: PWM
Voltage - Supply (Min): 7V
Voltage - Supply (Max): 28V
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| TRS10H120H,S1Q |
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Виробник: Toshiba Semiconductor and Storage
Description: DIODE SIL CARB 1200V 38A TO2472L
Packaging: Tube
Package / Case: TO-247-2
Mounting Type: Through Hole
Speed: No Recovery Time > 500mA (Io)
Reverse Recovery Time (trr): 0 ns
Technology: SiC (Silicon Carbide) Schottky
Capacitance @ Vr, F: 1148pF @ 1V, 1MHz
Current - Average Rectified (Io): 38A
Supplier Device Package: TO-247-2L
Operating Temperature - Junction: 175°C
Voltage - DC Reverse (Vr) (Max): 1200 V
Voltage - Forward (Vf) (Max) @ If: 1.45 V @ 10 A
Current - Reverse Leakage @ Vr: 80 µA @ 1200 V
Description: DIODE SIL CARB 1200V 38A TO2472L
Packaging: Tube
Package / Case: TO-247-2
Mounting Type: Through Hole
Speed: No Recovery Time > 500mA (Io)
Reverse Recovery Time (trr): 0 ns
Technology: SiC (Silicon Carbide) Schottky
Capacitance @ Vr, F: 1148pF @ 1V, 1MHz
Current - Average Rectified (Io): 38A
Supplier Device Package: TO-247-2L
Operating Temperature - Junction: 175°C
Voltage - DC Reverse (Vr) (Max): 1200 V
Voltage - Forward (Vf) (Max) @ If: 1.45 V @ 10 A
Current - Reverse Leakage @ Vr: 80 µA @ 1200 V
на замовлення 40 шт:
термін постачання 21-31 дні (днів)
| Кількість | Ціна |
|---|---|
| 1+ | 620.07 грн |
| 30+ | 423.47 грн |
| TRS15H120H,S1Q |
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Виробник: Toshiba Semiconductor and Storage
Description: DIODE SIL CARB 1200V 50A TO2472L
Packaging: Tube
Package / Case: TO-247-2
Mounting Type: Through Hole
Speed: No Recovery Time > 500mA (Io)
Reverse Recovery Time (trr): 0 ns
Technology: SiC (Silicon Carbide) Schottky
Capacitance @ Vr, F: 1673pF @ 1V, 1MHz
Current - Average Rectified (Io): 50A
Supplier Device Package: TO-247-2L
Operating Temperature - Junction: 175°C
Voltage - DC Reverse (Vr) (Max): 1200 V
Voltage - Forward (Vf) (Max) @ If: 1.45 V @ 15 A
Current - Reverse Leakage @ Vr: 100 µA @ 1200 V
Description: DIODE SIL CARB 1200V 50A TO2472L
Packaging: Tube
Package / Case: TO-247-2
Mounting Type: Through Hole
Speed: No Recovery Time > 500mA (Io)
Reverse Recovery Time (trr): 0 ns
Technology: SiC (Silicon Carbide) Schottky
Capacitance @ Vr, F: 1673pF @ 1V, 1MHz
Current - Average Rectified (Io): 50A
Supplier Device Package: TO-247-2L
Operating Temperature - Junction: 175°C
Voltage - DC Reverse (Vr) (Max): 1200 V
Voltage - Forward (Vf) (Max) @ If: 1.45 V @ 15 A
Current - Reverse Leakage @ Vr: 100 µA @ 1200 V
на замовлення 60 шт:
термін постачання 21-31 дні (днів)
| Кількість | Ціна |
|---|---|
| 1+ | 822.27 грн |
| 30+ | 521.69 грн |
| TRS40H120H,S1Q |
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Виробник: Toshiba Semiconductor and Storage
Description: 1200 V/40 A SIC SCHOTTKY BARRIER
Packaging: Tube
Package / Case: TO-247-2
Mounting Type: Through Hole
Speed: No Recovery Time > 500mA (Io)
Reverse Recovery Time (trr): 0 ns
Technology: SiC (Silicon Carbide) Schottky
Capacitance @ Vr, F: 4368pF @ 1V, 1MHz
Current - Average Rectified (Io): 102A
Supplier Device Package: TO-247-2L
Operating Temperature - Junction: 175°C
Voltage - DC Reverse (Vr) (Max): 1200 V
Voltage - Forward (Vf) (Max) @ If: 1.45 V @ 40 A
Current - Reverse Leakage @ Vr: 230 µA @ 1.2 kV
Description: 1200 V/40 A SIC SCHOTTKY BARRIER
Packaging: Tube
Package / Case: TO-247-2
Mounting Type: Through Hole
Speed: No Recovery Time > 500mA (Io)
Reverse Recovery Time (trr): 0 ns
Technology: SiC (Silicon Carbide) Schottky
Capacitance @ Vr, F: 4368pF @ 1V, 1MHz
Current - Average Rectified (Io): 102A
Supplier Device Package: TO-247-2L
Operating Temperature - Junction: 175°C
Voltage - DC Reverse (Vr) (Max): 1200 V
Voltage - Forward (Vf) (Max) @ If: 1.45 V @ 40 A
Current - Reverse Leakage @ Vr: 230 µA @ 1.2 kV
на замовлення 60 шт:
термін постачання 21-31 дні (днів)
| Кількість | Ціна |
|---|---|
| 1+ | 1295.65 грн |
| 30+ | 780.92 грн |
| 74LV4T125FT |
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Виробник: Toshiba Semiconductor and Storage
Description: TSSOP14 UNIDIRECTIONAL LEVEL SHI
Packaging: Tape & Reel (TR)
Package / Case: 14-TSSOP (0.173", 4.40mm Width)
Output Type: 3-State
Mounting Type: Surface Mount
Number of Elements: 4
Logic Type: Buffer, Non-Inverting
Operating Temperature: -40°C ~ 125°C (TA)
Voltage - Supply: 1.65V ~ 5.5V
Number of Bits per Element: 1
Current - Output High, Low: 16mA, 16mA
Supplier Device Package: 14-TSSOP
Grade: Automotive
Qualification: AEC-Q100
Description: TSSOP14 UNIDIRECTIONAL LEVEL SHI
Packaging: Tape & Reel (TR)
Package / Case: 14-TSSOP (0.173", 4.40mm Width)
Output Type: 3-State
Mounting Type: Surface Mount
Number of Elements: 4
Logic Type: Buffer, Non-Inverting
Operating Temperature: -40°C ~ 125°C (TA)
Voltage - Supply: 1.65V ~ 5.5V
Number of Bits per Element: 1
Current - Output High, Low: 16mA, 16mA
Supplier Device Package: 14-TSSOP
Grade: Automotive
Qualification: AEC-Q100
товару немає в наявності
Мінімальне замовлення: 2500 шт
В кошику
од. на суму грн.
| TLX9150M(TPL,F |
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Виробник: Toshiba Semiconductor and Storage
Description: PHOTORELAY 900V AEC-Q101
Packaging: Tape & Reel (TR)
Package / Case: 12-SOIC (0.295", 7.50mm Width), 8 Leads
Output Type: AC
Mounting Type: Surface Mount
Voltage - Input: 1.65VDC
Circuit: SPST-NO (1 Form A)
Operating Temperature: -40°C ~ 125°C
Load Current: 50 mA
Supplier Device Package: 12-SO
Grade: Automotive
Voltage - Load: 0 V ~ 900 V
On-State Resistance (Max): 250 Ohms
Qualification: AEC-Q101
Description: PHOTORELAY 900V AEC-Q101
Packaging: Tape & Reel (TR)
Package / Case: 12-SOIC (0.295", 7.50mm Width), 8 Leads
Output Type: AC
Mounting Type: Surface Mount
Voltage - Input: 1.65VDC
Circuit: SPST-NO (1 Form A)
Operating Temperature: -40°C ~ 125°C
Load Current: 50 mA
Supplier Device Package: 12-SO
Grade: Automotive
Voltage - Load: 0 V ~ 900 V
On-State Resistance (Max): 250 Ohms
Qualification: AEC-Q101
товару немає в наявності
Мінімальне замовлення: 1500 шт
В кошику
од. на суму грн.
| TLX9150M(TPL,F |
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Виробник: Toshiba Semiconductor and Storage
Description: PHOTORELAY 900V AEC-Q101
Packaging: Cut Tape (CT)
Package / Case: 12-SOIC (0.295", 7.50mm Width), 8 Leads
Output Type: AC
Mounting Type: Surface Mount
Voltage - Input: 1.65VDC
Circuit: SPST-NO (1 Form A)
Operating Temperature: -40°C ~ 125°C
Load Current: 50 mA
Supplier Device Package: 12-SO
Grade: Automotive
Voltage - Load: 0 V ~ 900 V
On-State Resistance (Max): 250 Ohms
Qualification: AEC-Q101
Description: PHOTORELAY 900V AEC-Q101
Packaging: Cut Tape (CT)
Package / Case: 12-SOIC (0.295", 7.50mm Width), 8 Leads
Output Type: AC
Mounting Type: Surface Mount
Voltage - Input: 1.65VDC
Circuit: SPST-NO (1 Form A)
Operating Temperature: -40°C ~ 125°C
Load Current: 50 mA
Supplier Device Package: 12-SO
Grade: Automotive
Voltage - Load: 0 V ~ 900 V
On-State Resistance (Max): 250 Ohms
Qualification: AEC-Q101
на замовлення 1375 шт:
термін постачання 21-31 дні (днів)
| Кількість | Ціна |
|---|---|
| 1+ | 394.09 грн |
| 10+ | 283.82 грн |
| 100+ | 227.60 грн |
| 500+ | 192.78 грн |
| TLP3450S(TP,E |
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Виробник: Toshiba Semiconductor and Storage
Description: PHOTORELAY LOW CR
Packaging: Tape & Reel (TR)
Package / Case: 4-SMD (0.079", 2.00mm)
Output Type: DC
Mounting Type: Surface Mount
Voltage - Input: 1.24VDC
Circuit: SPST-NO (1 Form A)
Operating Temperature: -40°C ~ 110°C
Load Current: 160 mA
Supplier Device Package: S-VSON4T (2x1.45)
Voltage - Load: 0 V ~ 20 V
On-State Resistance (Max): 8.5 Ohms
Description: PHOTORELAY LOW CR
Packaging: Tape & Reel (TR)
Package / Case: 4-SMD (0.079", 2.00mm)
Output Type: DC
Mounting Type: Surface Mount
Voltage - Input: 1.24VDC
Circuit: SPST-NO (1 Form A)
Operating Temperature: -40°C ~ 110°C
Load Current: 160 mA
Supplier Device Package: S-VSON4T (2x1.45)
Voltage - Load: 0 V ~ 20 V
On-State Resistance (Max): 8.5 Ohms
товару немає в наявності
Мінімальне замовлення: 2500 шт
В кошику
од. на суму грн.
| TLP3450S(TP,E |
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Виробник: Toshiba Semiconductor and Storage
Description: PHOTORELAY LOW CR
Packaging: Cut Tape (CT)
Package / Case: 4-SMD (0.079", 2.00mm)
Output Type: DC
Mounting Type: Surface Mount
Voltage - Input: 1.24VDC
Circuit: SPST-NO (1 Form A)
Operating Temperature: -40°C ~ 110°C
Load Current: 160 mA
Supplier Device Package: S-VSON4T (2x1.45)
Voltage - Load: 0 V ~ 20 V
On-State Resistance (Max): 8.5 Ohms
Description: PHOTORELAY LOW CR
Packaging: Cut Tape (CT)
Package / Case: 4-SMD (0.079", 2.00mm)
Output Type: DC
Mounting Type: Surface Mount
Voltage - Input: 1.24VDC
Circuit: SPST-NO (1 Form A)
Operating Temperature: -40°C ~ 110°C
Load Current: 160 mA
Supplier Device Package: S-VSON4T (2x1.45)
Voltage - Load: 0 V ~ 20 V
On-State Resistance (Max): 8.5 Ohms
на замовлення 1772 шт:
термін постачання 21-31 дні (днів)
| Кількість | Ціна |
|---|---|
| 1+ | 405.19 грн |
| 10+ | 292.60 грн |
| 100+ | 234.78 грн |
| 500+ | 196.63 грн |
| 1000+ | 191.61 грн |
| TLP3431S(TP,E |
Виробник: Toshiba Semiconductor and Storage
Description: PHOTORELAY; FAST SWITCHING; ROHS
Packaging: Tape & Reel (TR)
Package / Case: 4-SMD (0.079", 2.00mm)
Output Type: DC
Mounting Type: Surface Mount
Voltage - Input: 1.24VDC
Circuit: SPST-NO (1 Form A)
Operating Temperature: -40°C ~ 110°C
Load Current: 450 mA
Supplier Device Package: S-VSON4T (2x1.45)
Voltage - Load: 0 V ~ 20 V
On-State Resistance (Max): 1.2 Ohms
Description: PHOTORELAY; FAST SWITCHING; ROHS
Packaging: Tape & Reel (TR)
Package / Case: 4-SMD (0.079", 2.00mm)
Output Type: DC
Mounting Type: Surface Mount
Voltage - Input: 1.24VDC
Circuit: SPST-NO (1 Form A)
Operating Temperature: -40°C ~ 110°C
Load Current: 450 mA
Supplier Device Package: S-VSON4T (2x1.45)
Voltage - Load: 0 V ~ 20 V
On-State Resistance (Max): 1.2 Ohms
товару немає в наявності
Мінімальне замовлення: 2500 шт
В кошику
од. на суму грн.
| TLP3431S(TP,E |
Виробник: Toshiba Semiconductor and Storage
Description: PHOTORELAY; FAST SWITCHING; ROHS
Packaging: Cut Tape (CT)
Package / Case: 4-SMD (0.079", 2.00mm)
Output Type: DC
Mounting Type: Surface Mount
Voltage - Input: 1.24VDC
Circuit: SPST-NO (1 Form A)
Operating Temperature: -40°C ~ 110°C
Load Current: 450 mA
Supplier Device Package: S-VSON4T (2x1.45)
Voltage - Load: 0 V ~ 20 V
On-State Resistance (Max): 1.2 Ohms
Description: PHOTORELAY; FAST SWITCHING; ROHS
Packaging: Cut Tape (CT)
Package / Case: 4-SMD (0.079", 2.00mm)
Output Type: DC
Mounting Type: Surface Mount
Voltage - Input: 1.24VDC
Circuit: SPST-NO (1 Form A)
Operating Temperature: -40°C ~ 110°C
Load Current: 450 mA
Supplier Device Package: S-VSON4T (2x1.45)
Voltage - Load: 0 V ~ 20 V
On-State Resistance (Max): 1.2 Ohms
на замовлення 2340 шт:
термін постачання 21-31 дні (днів)
| Кількість | Ціна |
|---|---|
| 1+ | 400.43 грн |
| 10+ | 288.70 грн |
| 100+ | 231.68 грн |
| 500+ | 196.64 грн |
| TLX9152M(TPL,F |
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Виробник: Toshiba Semiconductor and Storage
Description: PHOTORELAY ROHS AEC-Q101
Packaging: Tape & Reel (TR)
Package / Case: 16-SOIC (0.295", 7.50mm Width)
Output Type: DC
Mounting Type: Surface Mount
Voltage - Input: 1.65VDC
Circuit: SPST-NO (1 Form A)
Operating Temperature: -40°C ~ 125°C
Load Current: 50 mA
Supplier Device Package: 16-SO
Grade: Automotive
Voltage - Load: 0 V ~ 900 V
On-State Resistance (Max): 400 Ohms
Qualification: AEC-Q101
Description: PHOTORELAY ROHS AEC-Q101
Packaging: Tape & Reel (TR)
Package / Case: 16-SOIC (0.295", 7.50mm Width)
Output Type: DC
Mounting Type: Surface Mount
Voltage - Input: 1.65VDC
Circuit: SPST-NO (1 Form A)
Operating Temperature: -40°C ~ 125°C
Load Current: 50 mA
Supplier Device Package: 16-SO
Grade: Automotive
Voltage - Load: 0 V ~ 900 V
On-State Resistance (Max): 400 Ohms
Qualification: AEC-Q101
товару немає в наявності
Мінімальне замовлення: 1500 шт
В кошику
од. на суму грн.
| TLX9152M(TPL,F |
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Виробник: Toshiba Semiconductor and Storage
Description: PHOTORELAY ROHS AEC-Q101
Packaging: Cut Tape (CT)
Package / Case: 16-SOIC (0.295", 7.50mm Width)
Output Type: DC
Mounting Type: Surface Mount
Voltage - Input: 1.65VDC
Circuit: SPST-NO (1 Form A)
Operating Temperature: -40°C ~ 125°C
Load Current: 50 mA
Supplier Device Package: 16-SO
Grade: Automotive
Voltage - Load: 0 V ~ 900 V
On-State Resistance (Max): 400 Ohms
Qualification: AEC-Q101
Description: PHOTORELAY ROHS AEC-Q101
Packaging: Cut Tape (CT)
Package / Case: 16-SOIC (0.295", 7.50mm Width)
Output Type: DC
Mounting Type: Surface Mount
Voltage - Input: 1.65VDC
Circuit: SPST-NO (1 Form A)
Operating Temperature: -40°C ~ 125°C
Load Current: 50 mA
Supplier Device Package: 16-SO
Grade: Automotive
Voltage - Load: 0 V ~ 900 V
On-State Resistance (Max): 400 Ohms
Qualification: AEC-Q101
на замовлення 1440 шт:
термін постачання 21-31 дні (днів)
| Кількість | Ціна |
|---|---|
| 1+ | 449.59 грн |
| 10+ | 326.04 грн |
| 100+ | 263.08 грн |
| 500+ | 226.52 грн |
| TLP3475W(TP,E |
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Виробник: Toshiba Semiconductor and Storage
Description: PHOTORELAY; HIGH FREQUENCY; ROHS
Packaging: Tape & Reel (TR)
Package / Case: 4-SMD (0.096", 2.45mm)
Output Type: DC
Mounting Type: Surface Mount
Voltage - Input: 1.27VDC
Circuit: SPST-NO (1 Form A)
Operating Temperature: -40°C ~ 110°C
Termination Style: SMD (SMT) Tab
Load Current: 300 mA
Supplier Device Package: 4-VSON (1.45x2.45)
Voltage - Load: 0 V ~ 50 V
On-State Resistance (Max): 1.5 Ohms
Description: PHOTORELAY; HIGH FREQUENCY; ROHS
Packaging: Tape & Reel (TR)
Package / Case: 4-SMD (0.096", 2.45mm)
Output Type: DC
Mounting Type: Surface Mount
Voltage - Input: 1.27VDC
Circuit: SPST-NO (1 Form A)
Operating Temperature: -40°C ~ 110°C
Termination Style: SMD (SMT) Tab
Load Current: 300 mA
Supplier Device Package: 4-VSON (1.45x2.45)
Voltage - Load: 0 V ~ 50 V
On-State Resistance (Max): 1.5 Ohms
на замовлення 3000 шт:
термін постачання 21-31 дні (днів)
| Кількість | Ціна |
|---|---|
| 3000+ | 260.31 грн |
| TLP3475W(TP,E |
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Виробник: Toshiba Semiconductor and Storage
Description: PHOTORELAY; HIGH FREQUENCY; ROHS
Packaging: Cut Tape (CT)
Package / Case: 4-SMD (0.096", 2.45mm)
Output Type: DC
Mounting Type: Surface Mount
Voltage - Input: 1.27VDC
Circuit: SPST-NO (1 Form A)
Operating Temperature: -40°C ~ 110°C
Termination Style: SMD (SMT) Tab
Load Current: 300 mA
Supplier Device Package: 4-VSON (1.45x2.45)
Voltage - Load: 0 V ~ 50 V
On-State Resistance (Max): 1.5 Ohms
Description: PHOTORELAY; HIGH FREQUENCY; ROHS
Packaging: Cut Tape (CT)
Package / Case: 4-SMD (0.096", 2.45mm)
Output Type: DC
Mounting Type: Surface Mount
Voltage - Input: 1.27VDC
Circuit: SPST-NO (1 Form A)
Operating Temperature: -40°C ~ 110°C
Termination Style: SMD (SMT) Tab
Load Current: 300 mA
Supplier Device Package: 4-VSON (1.45x2.45)
Voltage - Load: 0 V ~ 50 V
On-State Resistance (Max): 1.5 Ohms
на замовлення 3880 шт:
термін постачання 21-31 дні (днів)
| Кількість | Ціна |
|---|---|
| 1+ | 513.82 грн |
| 10+ | 374.60 грн |
| 100+ | 304.13 грн |
| 500+ | 256.57 грн |
| TLP3483(TP,E |
Виробник: Toshiba Semiconductor and Storage
Description: PHOTORELAY
Packaging: Tape & Reel (TR)
Package / Case: 4-LDFN
Output Type: DC
Mounting Type: Surface Mount
Voltage - Input: 1.2VDC
Circuit: SPST-NO (1 Form A)
Operating Temperature: -40°C ~ 110°C
Load Current: 350 mA
Supplier Device Package: S-VSON4T (3.4x2.1)
Voltage - Load: 0 V ~ 200 V
On-State Resistance (Max): 8 Ohms
Description: PHOTORELAY
Packaging: Tape & Reel (TR)
Package / Case: 4-LDFN
Output Type: DC
Mounting Type: Surface Mount
Voltage - Input: 1.2VDC
Circuit: SPST-NO (1 Form A)
Operating Temperature: -40°C ~ 110°C
Load Current: 350 mA
Supplier Device Package: S-VSON4T (3.4x2.1)
Voltage - Load: 0 V ~ 200 V
On-State Resistance (Max): 8 Ohms
товару немає в наявності
Мінімальне замовлення: 1500 шт
В кошику
од. на суму грн.
| TLP176D(TP,M,F) |
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Виробник: Toshiba Semiconductor and Storage
Description: PHOTORELAY MOSFET OUT 8-SOP
Packaging: Tape & Reel (TR)
Package / Case: 4-SOP (0.173", 4.40mm)
Output Type: AC, DC
Mounting Type: Surface Mount
Voltage - Input: 1.15VDC
Circuit: SPST-NO (1 Form A)
Operating Temperature: -40°C ~ 85°C
Termination Style: Gull Wing
Load Current: 200 mA
Approval Agency: cUL, UL, VDE
Supplier Device Package: 4-SOP
Voltage - Load: 0 V ~ 200 V
On-State Resistance (Max): 8 Ohms
Description: PHOTORELAY MOSFET OUT 8-SOP
Packaging: Tape & Reel (TR)
Package / Case: 4-SOP (0.173", 4.40mm)
Output Type: AC, DC
Mounting Type: Surface Mount
Voltage - Input: 1.15VDC
Circuit: SPST-NO (1 Form A)
Operating Temperature: -40°C ~ 85°C
Termination Style: Gull Wing
Load Current: 200 mA
Approval Agency: cUL, UL, VDE
Supplier Device Package: 4-SOP
Voltage - Load: 0 V ~ 200 V
On-State Resistance (Max): 8 Ohms
товару немає в наявності
В кошику
од. на суму грн.
| TLP223GA(F |
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Виробник: Toshiba Semiconductor and Storage
Description: PHOTORELAY 400V 6-DIP
Packaging: Tube
Package / Case: 4-DIP (0.300", 7.62mm)
Output Type: AC, DC
Mounting Type: Through Hole
Voltage - Input: 1.27VDC
Circuit: SPST-NO (1 Form A)
Operating Temperature: -40°C ~ 110°C
Termination Style: PC Pin
Load Current: 120 mA
Approval Agency: cUL, UL, VDE
Supplier Device Package: 4-DIP
Voltage - Load: 0 V ~ 400 V
On-State Resistance (Max): 35 Ohms
Description: PHOTORELAY 400V 6-DIP
Packaging: Tube
Package / Case: 4-DIP (0.300", 7.62mm)
Output Type: AC, DC
Mounting Type: Through Hole
Voltage - Input: 1.27VDC
Circuit: SPST-NO (1 Form A)
Operating Temperature: -40°C ~ 110°C
Termination Style: PC Pin
Load Current: 120 mA
Approval Agency: cUL, UL, VDE
Supplier Device Package: 4-DIP
Voltage - Load: 0 V ~ 400 V
On-State Resistance (Max): 35 Ohms
товару немає в наявності
В кошику
од. на суму грн.
| TK4R9E15Q5,S1X |
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Виробник: Toshiba Semiconductor and Storage
Description: 150V UMOS10-HSD TO-220 4.9MOHM
Packaging: Tube
Package / Case: TO-220-3
Mounting Type: Through Hole
Operating Temperature: 175°C
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 120A (Tc)
Rds On (Max) @ Id, Vgs: 4.9mOhm @ 50A, 10V
Power Dissipation (Max): 300W (Tc)
Vgs(th) (Max) @ Id: 4.5V @ 2.2mA
Supplier Device Package: TO-220
Drive Voltage (Max Rds On, Min Rds On): 8V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 150 V
Gate Charge (Qg) (Max) @ Vgs: 96 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 7820 pF @ 75 V
Description: 150V UMOS10-HSD TO-220 4.9MOHM
Packaging: Tube
Package / Case: TO-220-3
Mounting Type: Through Hole
Operating Temperature: 175°C
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 120A (Tc)
Rds On (Max) @ Id, Vgs: 4.9mOhm @ 50A, 10V
Power Dissipation (Max): 300W (Tc)
Vgs(th) (Max) @ Id: 4.5V @ 2.2mA
Supplier Device Package: TO-220
Drive Voltage (Max Rds On, Min Rds On): 8V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 150 V
Gate Charge (Qg) (Max) @ Vgs: 96 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 7820 pF @ 75 V
на замовлення 132 шт:
термін постачання 21-31 дні (днів)
| Кількість | Ціна |
|---|---|
| 2+ | 293.38 грн |
| 50+ | 223.48 грн |
| 100+ | 218.89 грн |
| TK115N65Z5,S1F |
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Виробник: Toshiba Semiconductor and Storage
Description: N-CH MOSFET, 650 V, 0.115 @10V,
Packaging: Tube
Package / Case: TO-247-3
Mounting Type: Through Hole
Operating Temperature: 150°C
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 24A (Ta)
Rds On (Max) @ Id, Vgs: 115mOhm @ 12A, 10V
Power Dissipation (Max): 190W (Tc)
Vgs(th) (Max) @ Id: 4.5V @ 1.02mA
Supplier Device Package: TO-247
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±30V
Drain to Source Voltage (Vdss): 650 V
Gate Charge (Qg) (Max) @ Vgs: 42 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 2280 pF @ 300 V
Description: N-CH MOSFET, 650 V, 0.115 @10V,
Packaging: Tube
Package / Case: TO-247-3
Mounting Type: Through Hole
Operating Temperature: 150°C
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 24A (Ta)
Rds On (Max) @ Id, Vgs: 115mOhm @ 12A, 10V
Power Dissipation (Max): 190W (Tc)
Vgs(th) (Max) @ Id: 4.5V @ 1.02mA
Supplier Device Package: TO-247
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±30V
Drain to Source Voltage (Vdss): 650 V
Gate Charge (Qg) (Max) @ Vgs: 42 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 2280 pF @ 300 V
на замовлення 60 шт:
термін постачання 21-31 дні (днів)
| Кількість | Ціна |
|---|---|
| 1+ | 505.10 грн |
| 30+ | 279.41 грн |
| TMPM366FYXBG |
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Виробник: Toshiba Semiconductor and Storage
Description: IC MCU 32BIT 256KB FLSH 109TFBGA
Packaging: Tray
Package / Case: 109-TFBGA
Mounting Type: Surface Mount
Speed: 48MHz
Program Memory Size: 256KB (256K x 8)
RAM Size: 48K x 8
Operating Temperature: -40°C ~ 85°C (TA)
Oscillator Type: Internal
Program Memory Type: FLASH
Core Processor: ARM® Cortex®-M3
Data Converters: A/D 12x12b
Core Size: 32-Bit
Voltage - Supply (Vcc/Vdd): 2.7V ~ 3.6V
Connectivity: I2C, SIO, SPI, UART/USART
Peripherals: DMA, LVD, WDT
Supplier Device Package: 109-TFBGA (9x9)
Number of I/O: 73
DigiKey Programmable: Not Verified
Description: IC MCU 32BIT 256KB FLSH 109TFBGA
Packaging: Tray
Package / Case: 109-TFBGA
Mounting Type: Surface Mount
Speed: 48MHz
Program Memory Size: 256KB (256K x 8)
RAM Size: 48K x 8
Operating Temperature: -40°C ~ 85°C (TA)
Oscillator Type: Internal
Program Memory Type: FLASH
Core Processor: ARM® Cortex®-M3
Data Converters: A/D 12x12b
Core Size: 32-Bit
Voltage - Supply (Vcc/Vdd): 2.7V ~ 3.6V
Connectivity: I2C, SIO, SPI, UART/USART
Peripherals: DMA, LVD, WDT
Supplier Device Package: 109-TFBGA (9x9)
Number of I/O: 73
DigiKey Programmable: Not Verified
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В кошику
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| TMPM366FDXBG |
![]() |
Виробник: Toshiba Semiconductor and Storage
Description: IC MCU 32BIT 512KB FLSH 109TFBGA
Packaging: Tray
Package / Case: 109-TFBGA
Mounting Type: Surface Mount
Speed: 48MHz
Program Memory Size: 512KB (512K x 8)
RAM Size: 64K x 8
Operating Temperature: -40°C ~ 85°C (TA)
Oscillator Type: Internal
Program Memory Type: FLASH
Core Processor: ARM® Cortex®-M3
Data Converters: A/D 12x12b
Core Size: 32-Bit
Voltage - Supply (Vcc/Vdd): 2.7V ~ 3.6V
Connectivity: I2C, SIO, UART/USART
Peripherals: DMA, PWM, WDT
Supplier Device Package: 109-TFBGA (9x9)
Number of I/O: 74
DigiKey Programmable: Not Verified
Description: IC MCU 32BIT 512KB FLSH 109TFBGA
Packaging: Tray
Package / Case: 109-TFBGA
Mounting Type: Surface Mount
Speed: 48MHz
Program Memory Size: 512KB (512K x 8)
RAM Size: 64K x 8
Operating Temperature: -40°C ~ 85°C (TA)
Oscillator Type: Internal
Program Memory Type: FLASH
Core Processor: ARM® Cortex®-M3
Data Converters: A/D 12x12b
Core Size: 32-Bit
Voltage - Supply (Vcc/Vdd): 2.7V ~ 3.6V
Connectivity: I2C, SIO, UART/USART
Peripherals: DMA, PWM, WDT
Supplier Device Package: 109-TFBGA (9x9)
Number of I/O: 74
DigiKey Programmable: Not Verified
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В кошику
од. на суму грн.
| TMPM37AFSQG,EL |
Виробник: Toshiba Semiconductor and Storage
Description: IC MCU 32BIT 64KB FLASH 32VQFN
DigiKey Programmable: Not Verified
Number of I/O: 13
Supplier Device Package: 32-VQFN (5x5)
Peripherals: POR, PWM, Voltage Detect, WDT
Connectivity: I2C, SIO, UART/USART
Voltage - Supply (Vcc/Vdd): 4.5V ~ 5.5V
Core Size: 32-Bit
Data Converters: A/D 5x12b SAR
Core Processor: ARM® Cortex®-M3
Program Memory Type: FLASH
Oscillator Type: External, Internal
Operating Temperature: -40°C ~ 85°C
RAM Size: 4K x 8
Program Memory Size: 64KB (64K x 8)
Speed: 40MHz
Mounting Type: Surface Mount
Package / Case: 32-VFQFN Exposed Pad
Packaging: Tape & Reel (TR)
Description: IC MCU 32BIT 64KB FLASH 32VQFN
DigiKey Programmable: Not Verified
Number of I/O: 13
Supplier Device Package: 32-VQFN (5x5)
Peripherals: POR, PWM, Voltage Detect, WDT
Connectivity: I2C, SIO, UART/USART
Voltage - Supply (Vcc/Vdd): 4.5V ~ 5.5V
Core Size: 32-Bit
Data Converters: A/D 5x12b SAR
Core Processor: ARM® Cortex®-M3
Program Memory Type: FLASH
Oscillator Type: External, Internal
Operating Temperature: -40°C ~ 85°C
RAM Size: 4K x 8
Program Memory Size: 64KB (64K x 8)
Speed: 40MHz
Mounting Type: Surface Mount
Package / Case: 32-VFQFN Exposed Pad
Packaging: Tape & Reel (TR)
товару немає в наявності
В кошику
од. на суму грн.
| RN2418,LF |
![]() |
Виробник: Toshiba Semiconductor and Storage
Description: TRANS PREBIAS PNP 50V 0.1A SMINI
Packaging: Tape & Reel (TR)
Package / Case: TO-236-3, SC-59, SOT-23-3
Mounting Type: Surface Mount
Transistor Type: PNP - Pre-Biased
Vce Saturation (Max) @ Ib, Ic: 300mV @ 250µA, 5mA
Current - Collector Cutoff (Max): 500nA
DC Current Gain (hFE) (Min) @ Ic, Vce: 50 @ 10mA, 5V
Supplier Device Package: S-Mini
Current - Collector (Ic) (Max): 100 mA
Voltage - Collector Emitter Breakdown (Max): 50 V
Power - Max: 200 mW
Frequency - Transition: 200 MHz
Resistor - Base (R1): 47 kOhms
Resistor - Emitter Base (R2): 10 kOhms
Resistors Included: R1 and R2
Description: TRANS PREBIAS PNP 50V 0.1A SMINI
Packaging: Tape & Reel (TR)
Package / Case: TO-236-3, SC-59, SOT-23-3
Mounting Type: Surface Mount
Transistor Type: PNP - Pre-Biased
Vce Saturation (Max) @ Ib, Ic: 300mV @ 250µA, 5mA
Current - Collector Cutoff (Max): 500nA
DC Current Gain (hFE) (Min) @ Ic, Vce: 50 @ 10mA, 5V
Supplier Device Package: S-Mini
Current - Collector (Ic) (Max): 100 mA
Voltage - Collector Emitter Breakdown (Max): 50 V
Power - Max: 200 mW
Frequency - Transition: 200 MHz
Resistor - Base (R1): 47 kOhms
Resistor - Emitter Base (R2): 10 kOhms
Resistors Included: R1 and R2
товару немає в наявності
Мінімальне замовлення: 3000 шт
В кошику
од. на суму грн.
| RN2418,LF |
![]() |
Виробник: Toshiba Semiconductor and Storage
Description: TRANS PREBIAS PNP 50V 0.1A SMINI
Packaging: Cut Tape (CT)
Package / Case: TO-236-3, SC-59, SOT-23-3
Mounting Type: Surface Mount
Transistor Type: PNP - Pre-Biased
Vce Saturation (Max) @ Ib, Ic: 300mV @ 250µA, 5mA
Current - Collector Cutoff (Max): 500nA
DC Current Gain (hFE) (Min) @ Ic, Vce: 50 @ 10mA, 5V
Supplier Device Package: S-Mini
Current - Collector (Ic) (Max): 100 mA
Voltage - Collector Emitter Breakdown (Max): 50 V
Power - Max: 200 mW
Frequency - Transition: 200 MHz
Resistor - Base (R1): 47 kOhms
Resistor - Emitter Base (R2): 10 kOhms
Resistors Included: R1 and R2
Description: TRANS PREBIAS PNP 50V 0.1A SMINI
Packaging: Cut Tape (CT)
Package / Case: TO-236-3, SC-59, SOT-23-3
Mounting Type: Surface Mount
Transistor Type: PNP - Pre-Biased
Vce Saturation (Max) @ Ib, Ic: 300mV @ 250µA, 5mA
Current - Collector Cutoff (Max): 500nA
DC Current Gain (hFE) (Min) @ Ic, Vce: 50 @ 10mA, 5V
Supplier Device Package: S-Mini
Current - Collector (Ic) (Max): 100 mA
Voltage - Collector Emitter Breakdown (Max): 50 V
Power - Max: 200 mW
Frequency - Transition: 200 MHz
Resistor - Base (R1): 47 kOhms
Resistor - Emitter Base (R2): 10 kOhms
Resistors Included: R1 and R2
на замовлення 2947 шт:
термін постачання 21-31 дні (днів)
| Кількість | Ціна |
|---|---|
| 29+ | 11.10 грн |
| 50+ | 6.18 грн |
| 100+ | 3.83 грн |
| 500+ | 2.61 грн |
| 1000+ | 2.29 грн |
| RN1418,LF |
![]() |
Виробник: Toshiba Semiconductor and Storage
Description: TRANS PREBIAS NPN 50V 0.1A SMINI
Packaging: Tape & Reel (TR)
Package / Case: TO-236-3, SC-59, SOT-23-3
Mounting Type: Surface Mount
Transistor Type: NPN - Pre-Biased
Vce Saturation (Max) @ Ib, Ic: 300mV @ 250µA, 5mA
Current - Collector Cutoff (Max): 500nA
DC Current Gain (hFE) (Min) @ Ic, Vce: 50 @ 10mA, 5V
Supplier Device Package: S-Mini
Current - Collector (Ic) (Max): 100 mA
Voltage - Collector Emitter Breakdown (Max): 50 V
Power - Max: 200 mW
Frequency - Transition: 250 MHz
Resistor - Base (R1): 47 kOhms
Resistor - Emitter Base (R2): 10 kOhms
Resistors Included: R1 and R2
Description: TRANS PREBIAS NPN 50V 0.1A SMINI
Packaging: Tape & Reel (TR)
Package / Case: TO-236-3, SC-59, SOT-23-3
Mounting Type: Surface Mount
Transistor Type: NPN - Pre-Biased
Vce Saturation (Max) @ Ib, Ic: 300mV @ 250µA, 5mA
Current - Collector Cutoff (Max): 500nA
DC Current Gain (hFE) (Min) @ Ic, Vce: 50 @ 10mA, 5V
Supplier Device Package: S-Mini
Current - Collector (Ic) (Max): 100 mA
Voltage - Collector Emitter Breakdown (Max): 50 V
Power - Max: 200 mW
Frequency - Transition: 250 MHz
Resistor - Base (R1): 47 kOhms
Resistor - Emitter Base (R2): 10 kOhms
Resistors Included: R1 and R2
товару немає в наявності
Мінімальне замовлення: 3000 шт
В кошику
од. на суму грн.
| RN1418,LF |
![]() |
Виробник: Toshiba Semiconductor and Storage
Description: TRANS PREBIAS NPN 50V 0.1A SMINI
Packaging: Cut Tape (CT)
Package / Case: TO-236-3, SC-59, SOT-23-3
Mounting Type: Surface Mount
Transistor Type: NPN - Pre-Biased
Vce Saturation (Max) @ Ib, Ic: 300mV @ 250µA, 5mA
Current - Collector Cutoff (Max): 500nA
DC Current Gain (hFE) (Min) @ Ic, Vce: 50 @ 10mA, 5V
Supplier Device Package: S-Mini
Current - Collector (Ic) (Max): 100 mA
Voltage - Collector Emitter Breakdown (Max): 50 V
Power - Max: 200 mW
Frequency - Transition: 250 MHz
Resistor - Base (R1): 47 kOhms
Resistor - Emitter Base (R2): 10 kOhms
Resistors Included: R1 and R2
Description: TRANS PREBIAS NPN 50V 0.1A SMINI
Packaging: Cut Tape (CT)
Package / Case: TO-236-3, SC-59, SOT-23-3
Mounting Type: Surface Mount
Transistor Type: NPN - Pre-Biased
Vce Saturation (Max) @ Ib, Ic: 300mV @ 250µA, 5mA
Current - Collector Cutoff (Max): 500nA
DC Current Gain (hFE) (Min) @ Ic, Vce: 50 @ 10mA, 5V
Supplier Device Package: S-Mini
Current - Collector (Ic) (Max): 100 mA
Voltage - Collector Emitter Breakdown (Max): 50 V
Power - Max: 200 mW
Frequency - Transition: 250 MHz
Resistor - Base (R1): 47 kOhms
Resistor - Emitter Base (R2): 10 kOhms
Resistors Included: R1 and R2
на замовлення 171 шт:
термін постачання 21-31 дні (днів)
| Кількість | Ціна |
|---|---|
| 29+ | 11.10 грн |
| 50+ | 6.18 грн |
| 100+ | 3.83 грн |
| 74HC00D |
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Виробник: Toshiba Semiconductor and Storage
Description: IC GATE NAND 4CH 2-INP 14SOIC
Packaging: Tape & Reel (TR)
Package / Case: 14-SOIC (0.154", 3.90mm Width)
Mounting Type: Surface Mount
Logic Type: NAND Gate
Operating Temperature: -40°C ~ 125°C
Voltage - Supply: 2V ~ 6V
Current - Output High, Low: 5.2mA, 5.2mA
Number of Inputs: 2
Supplier Device Package: 14-SOIC
Input Logic Level - High: 1.5V ~ 4.2V
Input Logic Level - Low: 0.5V ~ 1.8V
Max Propagation Delay @ V, Max CL: 13ns @ 6V, 50pF
Number of Circuits: 4
Current - Quiescent (Max): 1 µA
Description: IC GATE NAND 4CH 2-INP 14SOIC
Packaging: Tape & Reel (TR)
Package / Case: 14-SOIC (0.154", 3.90mm Width)
Mounting Type: Surface Mount
Logic Type: NAND Gate
Operating Temperature: -40°C ~ 125°C
Voltage - Supply: 2V ~ 6V
Current - Output High, Low: 5.2mA, 5.2mA
Number of Inputs: 2
Supplier Device Package: 14-SOIC
Input Logic Level - High: 1.5V ~ 4.2V
Input Logic Level - Low: 0.5V ~ 1.8V
Max Propagation Delay @ V, Max CL: 13ns @ 6V, 50pF
Number of Circuits: 4
Current - Quiescent (Max): 1 µA
на замовлення 2500 шт:
термін постачання 21-31 дні (днів)
| Кількість | Ціна |
|---|---|
| 2500+ | 9.98 грн |
| 74HC00D |
![]() |
Виробник: Toshiba Semiconductor and Storage
Description: IC GATE NAND 4CH 2-INP 14SOIC
Packaging: Cut Tape (CT)
Package / Case: 14-SOIC (0.154", 3.90mm Width)
Mounting Type: Surface Mount
Logic Type: NAND Gate
Operating Temperature: -40°C ~ 125°C
Voltage - Supply: 2V ~ 6V
Current - Output High, Low: 5.2mA, 5.2mA
Number of Inputs: 2
Supplier Device Package: 14-SOIC
Input Logic Level - High: 1.5V ~ 4.2V
Input Logic Level - Low: 0.5V ~ 1.8V
Max Propagation Delay @ V, Max CL: 13ns @ 6V, 50pF
Number of Circuits: 4
Current - Quiescent (Max): 1 µA
Description: IC GATE NAND 4CH 2-INP 14SOIC
Packaging: Cut Tape (CT)
Package / Case: 14-SOIC (0.154", 3.90mm Width)
Mounting Type: Surface Mount
Logic Type: NAND Gate
Operating Temperature: -40°C ~ 125°C
Voltage - Supply: 2V ~ 6V
Current - Output High, Low: 5.2mA, 5.2mA
Number of Inputs: 2
Supplier Device Package: 14-SOIC
Input Logic Level - High: 1.5V ~ 4.2V
Input Logic Level - Low: 0.5V ~ 1.8V
Max Propagation Delay @ V, Max CL: 13ns @ 6V, 50pF
Number of Circuits: 4
Current - Quiescent (Max): 1 µA
на замовлення 4181 шт:
термін постачання 21-31 дні (днів)
| Кількість | Ціна |
|---|---|
| 14+ | 23.79 грн |
| 20+ | 15.73 грн |
| 25+ | 13.96 грн |
| 100+ | 11.28 грн |
| 250+ | 10.42 грн |
| 500+ | 9.90 грн |
| 1000+ | 9.32 грн |
| CMH07,LQ |
![]() |
Виробник: Toshiba Semiconductor and Storage
Description: 200 V/2 A RECTIFIER DIODE, M-FLA
Packaging: Tape & Reel (TR)
Package / Case: SOD-128
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 100 ns
Technology: Standard
Current - Average Rectified (Io): 2A
Supplier Device Package: M-FLAT (2.4x3.8)
Operating Temperature - Junction: -40°C ~ 150°C
Voltage - DC Reverse (Vr) (Max): 200 V
Voltage - Forward (Vf) (Max) @ If: 980 mV @ 2 A
Current - Reverse Leakage @ Vr: 10 µA @ 200 V
Description: 200 V/2 A RECTIFIER DIODE, M-FLA
Packaging: Tape & Reel (TR)
Package / Case: SOD-128
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 100 ns
Technology: Standard
Current - Average Rectified (Io): 2A
Supplier Device Package: M-FLAT (2.4x3.8)
Operating Temperature - Junction: -40°C ~ 150°C
Voltage - DC Reverse (Vr) (Max): 200 V
Voltage - Forward (Vf) (Max) @ If: 980 mV @ 2 A
Current - Reverse Leakage @ Vr: 10 µA @ 200 V
на замовлення 6000 шт:
термін постачання 21-31 дні (днів)
| Кількість | Ціна |
|---|---|
| 3000+ | 12.92 грн |
| 6000+ | 11.42 грн |
| CMH07,LQ |
![]() |
Виробник: Toshiba Semiconductor and Storage
Description: 200 V/2 A RECTIFIER DIODE, M-FLA
Packaging: Cut Tape (CT)
Package / Case: SOD-128
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 100 ns
Technology: Standard
Current - Average Rectified (Io): 2A
Supplier Device Package: M-FLAT (2.4x3.8)
Operating Temperature - Junction: -40°C ~ 150°C
Voltage - DC Reverse (Vr) (Max): 200 V
Voltage - Forward (Vf) (Max) @ If: 980 mV @ 2 A
Current - Reverse Leakage @ Vr: 10 µA @ 200 V
Description: 200 V/2 A RECTIFIER DIODE, M-FLA
Packaging: Cut Tape (CT)
Package / Case: SOD-128
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 100 ns
Technology: Standard
Current - Average Rectified (Io): 2A
Supplier Device Package: M-FLAT (2.4x3.8)
Operating Temperature - Junction: -40°C ~ 150°C
Voltage - DC Reverse (Vr) (Max): 200 V
Voltage - Forward (Vf) (Max) @ If: 980 mV @ 2 A
Current - Reverse Leakage @ Vr: 10 µA @ 200 V
на замовлення 6000 шт:
термін постачання 21-31 дні (днів)
| Кількість | Ціна |
|---|---|
| 6+ | 55.51 грн |
| 10+ | 33.52 грн |
| 100+ | 21.66 грн |
| 500+ | 15.54 грн |
| 1000+ | 14.00 грн |
| TC74HC123AF |
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Виробник: Toshiba Semiconductor and Storage
Description: SOP16 DUAL MONOSTABLE MULTIVIBRA
Packaging: Tape & Reel (TR)
Package / Case: 16-SOIC (0.209", 5.30mm Width)
Mounting Type: Surface Mount
Logic Type: Monostable
Operating Temperature: -40°C ~ 85°C
Propagation Delay: 23 ns
Independent Circuits: 2
Current - Output High, Low: 5.2mA, 5.2mA
Schmitt Trigger Input: Yes
Supplier Device Package: 16-SOP
Voltage - Supply: 2 V ~ 6 V
Description: SOP16 DUAL MONOSTABLE MULTIVIBRA
Packaging: Tape & Reel (TR)
Package / Case: 16-SOIC (0.209", 5.30mm Width)
Mounting Type: Surface Mount
Logic Type: Monostable
Operating Temperature: -40°C ~ 85°C
Propagation Delay: 23 ns
Independent Circuits: 2
Current - Output High, Low: 5.2mA, 5.2mA
Schmitt Trigger Input: Yes
Supplier Device Package: 16-SOP
Voltage - Supply: 2 V ~ 6 V
товару немає в наявності
В кошику
од. на суму грн.
| TCR3LM50A,RF |
![]() |
Виробник: Toshiba Semiconductor and Storage
Description: OUTPUT LDO REGULATOR 300 MA FIXE
Packaging: Tape & Reel (TR)
Package / Case: 4-XDFN Exposed Pad
Output Type: Fixed
Mounting Type: Surface Mount
Current - Output: 300mA
Operating Temperature: -40°C ~ 85°C
Output Configuration: Positive
Current - Quiescent (Iq): 2.2 µA
Voltage - Input (Max): 5.5V
Number of Regulators: 1
Supplier Device Package: 4-DFN (1x1)
Voltage - Output (Min/Fixed): 5V
Control Features: Enable
PSRR: 74dB ~ 43dB (100Hz ~ 100kHz)
Voltage Dropout (Max): 0.205V @ 200mA
Protection Features: Over Current, Over Temperature
Description: OUTPUT LDO REGULATOR 300 MA FIXE
Packaging: Tape & Reel (TR)
Package / Case: 4-XDFN Exposed Pad
Output Type: Fixed
Mounting Type: Surface Mount
Current - Output: 300mA
Operating Temperature: -40°C ~ 85°C
Output Configuration: Positive
Current - Quiescent (Iq): 2.2 µA
Voltage - Input (Max): 5.5V
Number of Regulators: 1
Supplier Device Package: 4-DFN (1x1)
Voltage - Output (Min/Fixed): 5V
Control Features: Enable
PSRR: 74dB ~ 43dB (100Hz ~ 100kHz)
Voltage Dropout (Max): 0.205V @ 200mA
Protection Features: Over Current, Over Temperature
на замовлення 10000 шт:
термін постачання 21-31 дні (днів)
| Кількість | Ціна |
|---|---|
| 5000+ | 6.19 грн |
| 10000+ | 5.80 грн |
| TCR3LM50A,RF |
![]() |
Виробник: Toshiba Semiconductor and Storage
Description: OUTPUT LDO REGULATOR 300 MA FIXE
Packaging: Cut Tape (CT)
Package / Case: 4-XDFN Exposed Pad
Output Type: Fixed
Mounting Type: Surface Mount
Current - Output: 300mA
Operating Temperature: -40°C ~ 85°C
Output Configuration: Positive
Current - Quiescent (Iq): 2.2 µA
Voltage - Input (Max): 5.5V
Number of Regulators: 1
Supplier Device Package: 4-DFN (1x1)
Voltage - Output (Min/Fixed): 5V
Control Features: Enable
PSRR: 74dB ~ 43dB (100Hz ~ 100kHz)
Voltage Dropout (Max): 0.205V @ 200mA
Protection Features: Over Current, Over Temperature
Description: OUTPUT LDO REGULATOR 300 MA FIXE
Packaging: Cut Tape (CT)
Package / Case: 4-XDFN Exposed Pad
Output Type: Fixed
Mounting Type: Surface Mount
Current - Output: 300mA
Operating Temperature: -40°C ~ 85°C
Output Configuration: Positive
Current - Quiescent (Iq): 2.2 µA
Voltage - Input (Max): 5.5V
Number of Regulators: 1
Supplier Device Package: 4-DFN (1x1)
Voltage - Output (Min/Fixed): 5V
Control Features: Enable
PSRR: 74dB ~ 43dB (100Hz ~ 100kHz)
Voltage Dropout (Max): 0.205V @ 200mA
Protection Features: Over Current, Over Temperature
на замовлення 10000 шт:
термін постачання 21-31 дні (днів)
| Кількість | Ціна |
|---|---|
| 22+ | 15.07 грн |
| 30+ | 10.31 грн |
| 34+ | 9.16 грн |
| 100+ | 7.34 грн |
| 250+ | 6.74 грн |
| 500+ | 6.39 грн |
| 1000+ | 5.99 грн |
| 2500+ | 5.69 грн |
| 7UL3G34FK,LF |
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Виробник: Toshiba Semiconductor and Storage
Description: IC BUFFER NON-INVERTING 3.6V US8
Supplier Device Package: US8
Current - Output High, Low: 8mA, 8mA
Number of Bits per Element: 1
Voltage - Supply: 0.9V ~ 3.6V
Operating Temperature: -40°C ~ 125°C (TA)
Logic Type: Buffer, Non-Inverting
Number of Elements: 3
Mounting Type: Surface Mount
Package / Case: 8-VFSOP (0.091", 2.30mm Width)
Packaging: Tape & Reel (TR)
Description: IC BUFFER NON-INVERTING 3.6V US8
Supplier Device Package: US8
Current - Output High, Low: 8mA, 8mA
Number of Bits per Element: 1
Voltage - Supply: 0.9V ~ 3.6V
Operating Temperature: -40°C ~ 125°C (TA)
Logic Type: Buffer, Non-Inverting
Number of Elements: 3
Mounting Type: Surface Mount
Package / Case: 8-VFSOP (0.091", 2.30mm Width)
Packaging: Tape & Reel (TR)
на замовлення 3000 шт:
термін постачання 21-31 дні (днів)
| Кількість | Ціна |
|---|---|
| 3000+ | 5.88 грн |
| 7UL3G34FK,LF |
![]() |
Виробник: Toshiba Semiconductor and Storage
Description: IC BUFFER NON-INVERTING 3.6V US8
Supplier Device Package: US8
Current - Output High, Low: 8mA, 8mA
Number of Bits per Element: 1
Voltage - Supply: 0.9V ~ 3.6V
Operating Temperature: -40°C ~ 125°C (TA)
Logic Type: Buffer, Non-Inverting
Number of Elements: 3
Mounting Type: Surface Mount
Package / Case: 8-VFSOP (0.091", 2.30mm Width)
Packaging: Cut Tape (CT)
Description: IC BUFFER NON-INVERTING 3.6V US8
Supplier Device Package: US8
Current - Output High, Low: 8mA, 8mA
Number of Bits per Element: 1
Voltage - Supply: 0.9V ~ 3.6V
Operating Temperature: -40°C ~ 125°C (TA)
Logic Type: Buffer, Non-Inverting
Number of Elements: 3
Mounting Type: Surface Mount
Package / Case: 8-VFSOP (0.091", 2.30mm Width)
Packaging: Cut Tape (CT)
на замовлення 3856 шт:
термін постачання 21-31 дні (днів)
| Кількість | Ціна |
|---|---|
| 20+ | 15.86 грн |
| 31+ | 10.00 грн |
| 35+ | 8.83 грн |
| 100+ | 7.09 грн |
| 250+ | 6.51 грн |
| 500+ | 6.16 грн |
| 1000+ | 5.78 грн |
| 2SC4738-Y,LXHF |
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Виробник: Toshiba Semiconductor and Storage
Description: NPN BIPOLAR TRANSISTOR 50V 0.15A
Transistor Type: NPN
Mounting Type: Surface Mount
Package / Case: SC-75, SOT-416
Packaging: Tape & Reel (TR)
Qualification: AEC-Q101
Power - Max: 120 mW
Voltage - Collector Emitter Breakdown (Max): 50 V
Current - Collector (Ic) (Max): 150 mA
Grade: Automotive
Supplier Device Package: SSM
Frequency - Transition: 80MHz
DC Current Gain (hFE) (Min) @ Ic, Vce: 120 @ 2mA, 6V
Current - Collector Cutoff (Max): 100nA (ICBO)
Vce Saturation (Max) @ Ib, Ic: 250mV @ 10mA, 100mA
Description: NPN BIPOLAR TRANSISTOR 50V 0.15A
Transistor Type: NPN
Mounting Type: Surface Mount
Package / Case: SC-75, SOT-416
Packaging: Tape & Reel (TR)
Qualification: AEC-Q101
Power - Max: 120 mW
Voltage - Collector Emitter Breakdown (Max): 50 V
Current - Collector (Ic) (Max): 150 mA
Grade: Automotive
Supplier Device Package: SSM
Frequency - Transition: 80MHz
DC Current Gain (hFE) (Min) @ Ic, Vce: 120 @ 2mA, 6V
Current - Collector Cutoff (Max): 100nA (ICBO)
Vce Saturation (Max) @ Ib, Ic: 250mV @ 10mA, 100mA
на замовлення 6000 шт:
термін постачання 21-31 дні (днів)
| Кількість | Ціна |
|---|---|
| 3000+ | 2.79 грн |
| 6000+ | 2.59 грн |
| 2SC4738-Y,LXHF |
![]() |
Виробник: Toshiba Semiconductor and Storage
Description: NPN BIPOLAR TRANSISTOR 50V 0.15A
Qualification: AEC-Q101
Power - Max: 120 mW
Voltage - Collector Emitter Breakdown (Max): 50 V
Current - Collector (Ic) (Max): 150 mA
Grade: Automotive
Supplier Device Package: SSM
Frequency - Transition: 80MHz
DC Current Gain (hFE) (Min) @ Ic, Vce: 120 @ 2mA, 6V
Current - Collector Cutoff (Max): 100nA (ICBO)
Vce Saturation (Max) @ Ib, Ic: 250mV @ 10mA, 100mA
Transistor Type: NPN
Mounting Type: Surface Mount
Package / Case: SC-75, SOT-416
Packaging: Cut Tape (CT)
Description: NPN BIPOLAR TRANSISTOR 50V 0.15A
Qualification: AEC-Q101
Power - Max: 120 mW
Voltage - Collector Emitter Breakdown (Max): 50 V
Current - Collector (Ic) (Max): 150 mA
Grade: Automotive
Supplier Device Package: SSM
Frequency - Transition: 80MHz
DC Current Gain (hFE) (Min) @ Ic, Vce: 120 @ 2mA, 6V
Current - Collector Cutoff (Max): 100nA (ICBO)
Vce Saturation (Max) @ Ib, Ic: 250mV @ 10mA, 100mA
Transistor Type: NPN
Mounting Type: Surface Mount
Package / Case: SC-75, SOT-416
Packaging: Cut Tape (CT)
на замовлення 6000 шт:
термін постачання 21-31 дні (днів)
| Кількість | Ціна |
|---|---|
| 45+ | 7.14 грн |
| 64+ | 4.81 грн |
| 73+ | 4.21 грн |
| 100+ | 3.33 грн |
| 250+ | 3.04 грн |
| 500+ | 2.85 грн |
| 1000+ | 2.66 грн |
| RN1114MFV,L3F |
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Виробник: Toshiba Semiconductor and Storage
Description: TRANS PREBIAS NPN 50V 0.1A VESM
Resistors Included: R1 and R2
Resistor - Emitter Base (R2): 10 kOhms
Resistor - Base (R1): 1 kOhms
Frequency - Transition: 250 MHz
Power - Max: 150 mW
Voltage - Collector Emitter Breakdown (Max): 50 V
Current - Collector (Ic) (Max): 100 mA
Supplier Device Package: VESM
DC Current Gain (hFE) (Min) @ Ic, Vce: 50 @ 10mA, 5V
Current - Collector Cutoff (Max): 500nA
Vce Saturation (Max) @ Ib, Ic: 300mV @ 250µA, 5mA
Transistor Type: NPN - Pre-Biased
Mounting Type: Surface Mount
Package / Case: SOT-723
Packaging: Tape & Reel (TR)
Description: TRANS PREBIAS NPN 50V 0.1A VESM
Resistors Included: R1 and R2
Resistor - Emitter Base (R2): 10 kOhms
Resistor - Base (R1): 1 kOhms
Frequency - Transition: 250 MHz
Power - Max: 150 mW
Voltage - Collector Emitter Breakdown (Max): 50 V
Current - Collector (Ic) (Max): 100 mA
Supplier Device Package: VESM
DC Current Gain (hFE) (Min) @ Ic, Vce: 50 @ 10mA, 5V
Current - Collector Cutoff (Max): 500nA
Vce Saturation (Max) @ Ib, Ic: 300mV @ 250µA, 5mA
Transistor Type: NPN - Pre-Biased
Mounting Type: Surface Mount
Package / Case: SOT-723
Packaging: Tape & Reel (TR)
товару немає в наявності
Мінімальне замовлення: 8000 шт
В кошику
од. на суму грн.
| RN1114MFV,L3F |
![]() |
Виробник: Toshiba Semiconductor and Storage
Description: TRANS PREBIAS NPN 50V 0.1A VESM
Power - Max: 150 mW
Voltage - Collector Emitter Breakdown (Max): 50 V
Current - Collector (Ic) (Max): 100 mA
Supplier Device Package: VESM
DC Current Gain (hFE) (Min) @ Ic, Vce: 50 @ 10mA, 5V
Current - Collector Cutoff (Max): 500nA
Vce Saturation (Max) @ Ib, Ic: 300mV @ 250µA, 5mA
Transistor Type: NPN - Pre-Biased
Mounting Type: Surface Mount
Package / Case: SOT-723
Packaging: Cut Tape (CT)
Resistors Included: R1 and R2
Resistor - Emitter Base (R2): 10 kOhms
Resistor - Base (R1): 1 kOhms
Frequency - Transition: 250 MHz
Description: TRANS PREBIAS NPN 50V 0.1A VESM
Power - Max: 150 mW
Voltage - Collector Emitter Breakdown (Max): 50 V
Current - Collector (Ic) (Max): 100 mA
Supplier Device Package: VESM
DC Current Gain (hFE) (Min) @ Ic, Vce: 50 @ 10mA, 5V
Current - Collector Cutoff (Max): 500nA
Vce Saturation (Max) @ Ib, Ic: 300mV @ 250µA, 5mA
Transistor Type: NPN - Pre-Biased
Mounting Type: Surface Mount
Package / Case: SOT-723
Packaging: Cut Tape (CT)
Resistors Included: R1 and R2
Resistor - Emitter Base (R2): 10 kOhms
Resistor - Base (R1): 1 kOhms
Frequency - Transition: 250 MHz
на замовлення 6394 шт:
термін постачання 21-31 дні (днів)
| Кількість | Ціна |
|---|---|
| 27+ | 11.89 грн |
| 42+ | 7.33 грн |
| 100+ | 4.54 грн |
| 500+ | 3.10 грн |
| 1000+ | 2.72 грн |
| 2000+ | 2.40 грн |





























