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TLP620M(Y-TP1,E TLP620M(Y-TP1,E Toshiba Semiconductor and Storage Description: OPTOISOLATOR 5KV 1CH TRANS 4-SMD
Packaging: Tape & Reel (TR)
Package / Case: 4-SMD (0.300", 7.62mm)
Output Type: Transistor
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 125°C
Voltage - Forward (Vf) (Typ): 1.25V
Input Type: AC, DC
Current - Output / Channel: 50mA
Voltage - Isolation: 5000Vrms
Current Transfer Ratio (Min): 50% @ 5mA
Vce Saturation (Max): 300mV
Current Transfer Ratio (Max): 600% @ 5mA
Supplier Device Package: 4-SMD
Voltage - Output (Max): 80V
Turn On / Turn Off Time (Typ): 3µs, 3µs
Rise / Fall Time (Typ): 2µs, 3µs
Number of Channels: 1
Current - DC Forward (If) (Max): 50 mA
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TLP620M(TP5,E TLP620M(TP5,E Toshiba Semiconductor and Storage Description: OPTOISOLATOR 5KV 1CH TRANS 4-SMD
Packaging: Tape & Reel (TR)
Package / Case: 4-SMD, Gull Wing
Output Type: Transistor
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 125°C
Voltage - Forward (Vf) (Typ): 1.25V
Input Type: AC, DC
Current - Output / Channel: 50mA
Voltage - Isolation: 5000Vrms
Current Transfer Ratio (Min): 50% @ 5mA
Vce Saturation (Max): 300mV
Current Transfer Ratio (Max): 600% @ 5mA
Supplier Device Package: 4-SMD
Voltage - Output (Max): 80V
Turn On / Turn Off Time (Typ): 3µs, 3µs
Rise / Fall Time (Typ): 2µs, 3µs
Number of Channels: 1
Current - DC Forward (If) (Max): 50 mA
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TLP620M(Y-TP5,E TLP620M(Y-TP5,E Toshiba Semiconductor and Storage Description: OPTOISOLATOR 5KV 1CH TRANS 4-SMD
Packaging: Tape & Reel (TR)
Package / Case: 4-SMD, Gull Wing
Output Type: Transistor
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 125°C
Voltage - Forward (Vf) (Typ): 1.25V
Input Type: AC, DC
Current - Output / Channel: 50mA
Voltage - Isolation: 5000Vrms
Current Transfer Ratio (Min): 50% @ 5mA
Vce Saturation (Max): 300mV
Current Transfer Ratio (Max): 600% @ 5mA
Supplier Device Package: 4-SMD
Voltage - Output (Max): 80V
Turn On / Turn Off Time (Typ): 3µs, 3µs
Rise / Fall Time (Typ): 2µs, 3µs
Number of Channels: 1
Current - DC Forward (If) (Max): 50 mA
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TLP620M(GR-TP5,E TLP620M(GR-TP5,E Toshiba Semiconductor and Storage Description: OPTOISOLATOR 5KV 1CH TRANS 4-SMD
Packaging: Tape & Reel (TR)
Package / Case: 4-SMD, Gull Wing
Output Type: Transistor
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 125°C
Voltage - Forward (Vf) (Typ): 1.25V
Input Type: AC, DC
Current - Output / Channel: 50mA
Voltage - Isolation: 5000Vrms
Current Transfer Ratio (Min): 50% @ 5mA
Vce Saturation (Max): 300mV
Current Transfer Ratio (Max): 600% @ 5mA
Supplier Device Package: 4-SMD
Voltage - Output (Max): 80V
Turn On / Turn Off Time (Typ): 3µs, 3µs
Rise / Fall Time (Typ): 2µs, 3µs
Number of Channels: 1
Current - DC Forward (If) (Max): 50 mA
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TMPM380FWFG TMPM380FWFG Toshiba Semiconductor and Storage Description: IC MCU 32BIT 128KB FLASH 100LQFP
Packaging: Tray
Package / Case: 100-LQFP
Mounting Type: Surface Mount
Speed: 40MHz
Program Memory Size: 128KB (128K x 8)
RAM Size: 12K x 8
Operating Temperature: -40°C ~ 85°C (TA)
Oscillator Type: External
Program Memory Type: FLASH
Core Processor: ARM® Cortex®-M3
Data Converters: A/D 18x12b
Core Size: 32-Bit
Voltage - Supply (Vcc/Vdd): 4V ~ 5.5V
Connectivity: I2C, SIO, UART/USART
Peripherals: DMA, LVD, WDT
Supplier Device Package: 100-LQFP (14x14)
Number of I/O: 83
DigiKey Programmable: Not Verified
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TPCC8093,L1Q TPCC8093,L1Q Toshiba Semiconductor and Storage Description: MOSFET N-CH 20V 21A 8TSON
Packaging: Tape & Reel (TR)
Package / Case: 8-PowerVDFN
Mounting Type: Surface Mount
Operating Temperature: 150°C
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 21A (Ta)
Rds On (Max) @ Id, Vgs: 5.8mOhm @ 10.5A, 4.5V
Power Dissipation (Max): 1.9W (Ta), 30W (Tc)
Vgs(th) (Max) @ Id: 1.2V @ 500µA
Supplier Device Package: 8-TSON Advance (3.1x3.1)
Drive Voltage (Max Rds On, Min Rds On): 2.5V, 4.5V
Vgs (Max): ±12V
Drain to Source Voltage (Vdss): 20 V
Gate Charge (Qg) (Max) @ Vgs: 16 nC @ 5 V
Input Capacitance (Ciss) (Max) @ Vds: 1860 pF @ 10 V
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TC7WPB9306FK,LF TC7WPB9306FK,LF Toshiba Semiconductor and Storage docget.jsp?did=12388&prodName=TC7WPB9306FK Description: IC BUS SWITCH 2 X 1:1 8-SSOP
Packaging: Cut Tape (CT)
Package / Case: 8-VFSOP (0.091", 2.30mm Width)
Mounting Type: Surface Mount
Circuit: 2 x 1:1
Type: Bus Switch
Operating Temperature: -40°C ~ 85°C
Voltage - Supply: 1.65V ~ 5V, 2.3V ~ 5.5V
Independent Circuits: 1
Voltage Supply Source: Dual Supply
Supplier Device Package: 8-SSOP
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7UL1G34NX,ELF 7UL1G34NX,ELF Toshiba Semiconductor and Storage docget.jsp?did=156995&prodName=7UL1G34NX Description: 1 GATE LOGIC, BUFFER, XSON6, NON
Packaging: Tape & Reel (TR)
Package / Case: 6-XFDFN
Mounting Type: Surface Mount
Number of Elements: 1
Logic Type: Buffer, Non-Inverting
Operating Temperature: -40°C ~ 85°C (TA)
Voltage - Supply: 0.9V ~ 3.6V
Number of Bits per Element: 1
Current - Output High, Low: 8mA, 8mA
Supplier Device Package: 6-MP6D (1.45x1)
на замовлення 5000 шт:
термін постачання 21-31 дні (днів)
5000+5.85 грн
Мінімальне замовлення: 5000
В кошику  од. на суму  грн.
7UL1G34NX,ELF 7UL1G34NX,ELF Toshiba Semiconductor and Storage docget.jsp?did=156995&prodName=7UL1G34NX Description: 1 GATE LOGIC, BUFFER, XSON6, NON
Packaging: Cut Tape (CT)
Package / Case: 6-XFDFN
Mounting Type: Surface Mount
Number of Elements: 1
Logic Type: Buffer, Non-Inverting
Operating Temperature: -40°C ~ 85°C (TA)
Voltage - Supply: 0.9V ~ 3.6V
Number of Bits per Element: 1
Current - Output High, Low: 8mA, 8mA
Supplier Device Package: 6-MP6D (1.45x1)
на замовлення 5000 шт:
термін постачання 21-31 дні (днів)
20+15.54 грн
30+10.10 грн
34+8.92 грн
100+7.16 грн
250+6.58 грн
500+6.23 грн
1000+5.84 грн
2500+5.67 грн
Мінімальне замовлення: 20
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TMPM4NRF10XBG Toshiba Semiconductor and Storage Description: MCU, DATA PROCESSING, ARM CORTEX
Packaging: Tray
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2SD2695,T6F(J 2SD2695,T6F(J Toshiba Semiconductor and Storage 2SD2695_2009-12-21.pdf Description: TRANS NPN 60V 2A TO-92MOD
Packaging: Bulk
Package / Case: TO-226-3, TO-92-3 Long Body
Mounting Type: Through Hole
Transistor Type: NPN
Operating Temperature: 150°C (TJ)
Vce Saturation (Max) @ Ib, Ic: 1.5V @ 1mA, 1A
Current - Collector Cutoff (Max): 10µA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce: 2000 @ 1A, 2V
Frequency - Transition: 100MHz
Supplier Device Package: TO-92MOD
Current - Collector (Ic) (Max): 2 A
Voltage - Collector Emitter Breakdown (Max): 60 V
Power - Max: 900 mW
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TMPM4GNF10FG TMPM4GNF10FG Toshiba Semiconductor and Storage TMPM3HMFDAFG_datasheet_en_20250221.pdf Description: IC MCU 32BIT 1MB FLASH 100LQFP
Packaging: Tray
Package / Case: 100-LQFP
Mounting Type: Surface Mount
Speed: 200MHz
Program Memory Size: 1MB (1M x 8)
RAM Size: 256K x 8
Operating Temperature: -40°C ~ 85°C
Oscillator Type: External, Internal
Program Memory Type: FLASH
EEPROM Size: 32K x 8
Core Processor: ARM® Cortex®-M4F
Data Converters: A/D 24x12b SAR; D/A 2x8b
Core Size: 32-Bit
Voltage - Supply (Vcc/Vdd): 2.7V ~ 3.6V
Connectivity: EBI/EMI, FIFO, I2C, IrDA, SIO, SPI, UART/USART
Peripherals: DMA, I2S, LVD, POR, PWM, WDT
Supplier Device Package: 100-LQFP (14x14)
Number of I/O: 91
DigiKey Programmable: Not Verified
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DCM340D01(AS,EL) DCM340D01(AS,EL) Toshiba Semiconductor and Storage standard-digital-isolators.html Description: 4-CH (4:0) AECQ HIGH SPEED DIGIT
Packaging: Tape & Reel (TR)
Package / Case: 16-SOIC (0.295", 7.50mm Width)
Mounting Type: Surface Mount
Type: SPI
Operating Temperature: -40°C ~ 125°C
Voltage - Supply: 3V ~ 5.5V
Data Rate: 50Mbps
Technology: Magnetic Coupling
Voltage - Isolation: 5000Vrms
Inputs - Side 1/Side 2: 4/0
Supplier Device Package: 16-SOIC
Rise / Fall Time (Typ): 0.9ns, 0.9ns
Common Mode Transient Immunity (Min): 100kV/µs (Typ)
Propagation Delay tpLH / tpHL (Max): 18.4ns, 18.4ns
Isolated Power: No
Channel Type: Unidirectional
Pulse Width Distortion (Max): 5.1ns
Grade: Automotive
Number of Channels: 4
Qualification: AEC-Q100
на замовлення 1500 шт:
термін постачання 21-31 дні (днів)
1500+123.61 грн
Мінімальне замовлення: 1500
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DCM340D01(AS,EL) DCM340D01(AS,EL) Toshiba Semiconductor and Storage standard-digital-isolators.html Description: 4-CH (4:0) AECQ HIGH SPEED DIGIT
Packaging: Cut Tape (CT)
Package / Case: 16-SOIC (0.295", 7.50mm Width)
Mounting Type: Surface Mount
Type: SPI
Operating Temperature: -40°C ~ 125°C
Voltage - Supply: 3V ~ 5.5V
Data Rate: 50Mbps
Technology: Magnetic Coupling
Voltage - Isolation: 5000Vrms
Inputs - Side 1/Side 2: 4/0
Supplier Device Package: 16-SOIC
Rise / Fall Time (Typ): 0.9ns, 0.9ns
Common Mode Transient Immunity (Min): 100kV/µs (Typ)
Propagation Delay tpLH / tpHL (Max): 18.4ns, 18.4ns
Isolated Power: No
Channel Type: Unidirectional
Pulse Width Distortion (Max): 5.1ns
Grade: Automotive
Number of Channels: 4
Qualification: AEC-Q100
на замовлення 1500 шт:
термін постачання 21-31 дні (днів)
2+227.67 грн
10+164.39 грн
25+150.79 грн
100+127.44 грн
250+120.74 грн
500+116.69 грн
Мінімальне замовлення: 2
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TCB001HQ TCB001HQ Toshiba Semiconductor and Storage TCB001HQ_datasheet_en_20220727.pdf?did=29411&prodName=TCB001HQ Description: AUDIO POWER AMPLIFIER, CLASS-AB,
Packaging: Tube
Package / Case: 25-SIP Formed Leads
Mounting Type: Through Hole
Supplier Device Package: 25-HZIP
Output Type: 4-Channel (Quad)
Type: Class AB
Operating Temperature: -40°C ~ 105°C (TA)
Voltage - Supply: 6V ~ 18V
Max Output Power x Channels @ Load: 45W x 4 @ 4Ohm
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TB62D786FTG,EL TB62D786FTG,EL Toshiba Semiconductor and Storage Description: IC LED DRVR LIN PWM 40MA 24VQFN
Packaging: Tape & Reel (TR)
Package / Case: 24-VFQFN Exposed Pad
Voltage - Output: 28V
Mounting Type: Surface Mount
Number of Outputs: 9
Type: Linear
Operating Temperature: -40°C ~ 85°C (TA)
Current - Output / Channel: 40mA
Internal Switch(s): Yes
Supplier Device Package: 24-VQFN (4x4)
Dimming: PWM
Voltage - Supply (Min): 7V
Voltage - Supply (Max): 28V
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TB62D786FTG,EL TB62D786FTG,EL Toshiba Semiconductor and Storage Description: IC LED DRVR LIN PWM 40MA 24VQFN
Packaging: Cut Tape (CT)
Package / Case: 24-VFQFN Exposed Pad
Voltage - Output: 28V
Mounting Type: Surface Mount
Number of Outputs: 9
Type: Linear
Operating Temperature: -40°C ~ 85°C (TA)
Current - Output / Channel: 40mA
Internal Switch(s): Yes
Supplier Device Package: 24-VQFN (4x4)
Dimming: PWM
Voltage - Supply (Min): 7V
Voltage - Supply (Max): 28V
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TRS10H120H,S1Q TRS10H120H,S1Q Toshiba Semiconductor and Storage docget.jsp?did=158257&prodName=TRS10H120H Description: DIODE SIL CARB 1200V 38A TO2472L
Packaging: Tube
Package / Case: TO-247-2
Mounting Type: Through Hole
Speed: No Recovery Time > 500mA (Io)
Reverse Recovery Time (trr): 0 ns
Technology: SiC (Silicon Carbide) Schottky
Capacitance @ Vr, F: 1148pF @ 1V, 1MHz
Current - Average Rectified (Io): 38A
Supplier Device Package: TO-247-2L
Operating Temperature - Junction: 175°C
Voltage - DC Reverse (Vr) (Max): 1200 V
Voltage - Forward (Vf) (Max) @ If: 1.45 V @ 10 A
Current - Reverse Leakage @ Vr: 80 µA @ 1200 V
на замовлення 40 шт:
термін постачання 21-31 дні (днів)
1+607.64 грн
30+414.98 грн
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TRS15H120H,S1Q TRS15H120H,S1Q Toshiba Semiconductor and Storage docget.jsp?did=158267&prodName=TRS15H120H Description: DIODE SIL CARB 1200V 50A TO2472L
Packaging: Tube
Package / Case: TO-247-2
Mounting Type: Through Hole
Speed: No Recovery Time > 500mA (Io)
Reverse Recovery Time (trr): 0 ns
Technology: SiC (Silicon Carbide) Schottky
Capacitance @ Vr, F: 1673pF @ 1V, 1MHz
Current - Average Rectified (Io): 50A
Supplier Device Package: TO-247-2L
Operating Temperature - Junction: 175°C
Voltage - DC Reverse (Vr) (Max): 1200 V
Voltage - Forward (Vf) (Max) @ If: 1.45 V @ 15 A
Current - Reverse Leakage @ Vr: 100 µA @ 1200 V
на замовлення 60 шт:
термін постачання 21-31 дні (днів)
1+805.79 грн
30+511.23 грн
В кошику  од. на суму  грн.
TRS40H120H,S1Q TRS40H120H,S1Q Toshiba Semiconductor and Storage TRS40H120H_datasheet_en_20240903.pdf?did=158289&prodName=TRS40H120H Description: 1200 V/40 A SIC SCHOTTKY BARRIER
Packaging: Tube
Package / Case: TO-247-2
Mounting Type: Through Hole
Speed: No Recovery Time > 500mA (Io)
Reverse Recovery Time (trr): 0 ns
Technology: SiC (Silicon Carbide) Schottky
Capacitance @ Vr, F: 4368pF @ 1V, 1MHz
Current - Average Rectified (Io): 102A
Supplier Device Package: TO-247-2L
Operating Temperature - Junction: 175°C
Voltage - DC Reverse (Vr) (Max): 1200 V
Voltage - Forward (Vf) (Max) @ If: 1.45 V @ 40 A
Current - Reverse Leakage @ Vr: 230 µA @ 1.2 kV
на замовлення 60 шт:
термін постачання 21-31 дні (днів)
1+1269.68 грн
30+765.27 грн
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TLP532(BLL,F) Toshiba Semiconductor and Storage Description: PHOTOCOUPLER
Packaging: Tube
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TLP373(F) Toshiba Semiconductor and Storage Description: PHOTOCOUPLER
Packaging: Tube
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74LV4T125FT Toshiba Semiconductor and Storage 74LV4T125FT_datasheet_en_20220622.pdf?did=68941&prodName=74LV4T125FT Description: TSSOP14 UNIDIRECTIONAL LEVEL SHI
Packaging: Tape & Reel (TR)
Package / Case: 14-TSSOP (0.173", 4.40mm Width)
Output Type: 3-State
Mounting Type: Surface Mount
Number of Elements: 4
Logic Type: Buffer, Non-Inverting
Operating Temperature: -40°C ~ 125°C (TA)
Voltage - Supply: 1.65V ~ 5.5V
Number of Bits per Element: 1
Current - Output High, Low: 16mA, 16mA
Supplier Device Package: 14-TSSOP
Grade: Automotive
Qualification: AEC-Q100
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TLX9150M(TPL,F TLX9150M(TPL,F Toshiba Semiconductor and Storage TLX9150M_datasheet_en_20240920.pdf?did=159447&prodName=TLX9150M Description: PHOTORELAY 900V AEC-Q101
Packaging: Tape & Reel (TR)
Package / Case: 12-SOIC (0.295", 7.50mm Width), 8 Leads
Output Type: AC
Mounting Type: Surface Mount
Voltage - Input: 1.65VDC
Circuit: SPST-NO (1 Form A)
Operating Temperature: -40°C ~ 125°C
Load Current: 50 mA
Supplier Device Package: 12-SO
Grade: Automotive
Voltage - Load: 0 V ~ 900 V
On-State Resistance (Max): 250 Ohms
Qualification: AEC-Q101
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TLX9150M(TPL,F TLX9150M(TPL,F Toshiba Semiconductor and Storage TLX9150M_datasheet_en_20240920.pdf?did=159447&prodName=TLX9150M Description: PHOTORELAY 900V AEC-Q101
Packaging: Cut Tape (CT)
Package / Case: 12-SOIC (0.295", 7.50mm Width), 8 Leads
Output Type: AC
Mounting Type: Surface Mount
Voltage - Input: 1.65VDC
Circuit: SPST-NO (1 Form A)
Operating Temperature: -40°C ~ 125°C
Load Current: 50 mA
Supplier Device Package: 12-SO
Grade: Automotive
Voltage - Load: 0 V ~ 900 V
On-State Resistance (Max): 250 Ohms
Qualification: AEC-Q101
на замовлення 1375 шт:
термін постачання 21-31 дні (днів)
1+386.19 грн
10+278.13 грн
100+223.04 грн
500+188.92 грн
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TLP3450S(TP,E TLP3450S(TP,E Toshiba Semiconductor and Storage TLP3450S_datasheet_en_20240704.pdf?did=154727&prodName=TLP3450S Description: PHOTORELAY LOW CR
Packaging: Tape & Reel (TR)
Package / Case: 4-SMD (0.079", 2.00mm)
Output Type: DC
Mounting Type: Surface Mount
Voltage - Input: 1.24VDC
Circuit: SPST-NO (1 Form A)
Operating Temperature: -40°C ~ 110°C
Load Current: 160 mA
Supplier Device Package: S-VSON4T (2x1.45)
Voltage - Load: 0 V ~ 20 V
On-State Resistance (Max): 8.5 Ohms
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TLP3450S(TP,E TLP3450S(TP,E Toshiba Semiconductor and Storage TLP3450S_datasheet_en_20240704.pdf?did=154727&prodName=TLP3450S Description: PHOTORELAY LOW CR
Packaging: Cut Tape (CT)
Package / Case: 4-SMD (0.079", 2.00mm)
Output Type: DC
Mounting Type: Surface Mount
Voltage - Input: 1.24VDC
Circuit: SPST-NO (1 Form A)
Operating Temperature: -40°C ~ 110°C
Load Current: 160 mA
Supplier Device Package: S-VSON4T (2x1.45)
Voltage - Load: 0 V ~ 20 V
On-State Resistance (Max): 8.5 Ohms
на замовлення 2450 шт:
термін постачання 21-31 дні (днів)
1+392.40 грн
10+282.92 грн
100+227.04 грн
500+192.70 грн
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TLP3431S(TP,E TLP3431S(TP,E Toshiba Semiconductor and Storage Description: PHOTORELAY; FAST SWITCHING; ROHS
Packaging: Tape & Reel (TR)
Package / Case: 4-SMD (0.079", 2.00mm)
Output Type: DC
Mounting Type: Surface Mount
Voltage - Input: 1.24VDC
Circuit: SPST-NO (1 Form A)
Operating Temperature: -40°C ~ 110°C
Load Current: 450 mA
Supplier Device Package: S-VSON4T (2x1.45)
Voltage - Load: 0 V ~ 20 V
On-State Resistance (Max): 1.2 Ohms
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TLP3431S(TP,E TLP3431S(TP,E Toshiba Semiconductor and Storage Description: PHOTORELAY; FAST SWITCHING; ROHS
Packaging: Cut Tape (CT)
Package / Case: 4-SMD (0.079", 2.00mm)
Output Type: DC
Mounting Type: Surface Mount
Voltage - Input: 1.24VDC
Circuit: SPST-NO (1 Form A)
Operating Temperature: -40°C ~ 110°C
Load Current: 450 mA
Supplier Device Package: S-VSON4T (2x1.45)
Voltage - Load: 0 V ~ 20 V
On-State Resistance (Max): 1.2 Ohms
на замовлення 2340 шт:
термін постачання 21-31 дні (днів)
1+392.40 грн
10+282.92 грн
100+227.04 грн
500+192.70 грн
В кошику  од. на суму  грн.
TLX9152M(TPL,F TLX9152M(TPL,F Toshiba Semiconductor and Storage docget.jsp?did=158243&prodName=TLX9152M Description: PHOTORELAY ROHS AEC-Q101
Packaging: Tape & Reel (TR)
Package / Case: 16-SOIC (0.295", 7.50mm Width)
Output Type: DC
Mounting Type: Surface Mount
Voltage - Input: 1.65VDC
Circuit: SPST-NO (1 Form A)
Operating Temperature: -40°C ~ 125°C
Load Current: 50 mA
Supplier Device Package: 16-SO
Grade: Automotive
Voltage - Load: 0 V ~ 900 V
On-State Resistance (Max): 400 Ohms
Qualification: AEC-Q101
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TLX9152M(TPL,F TLX9152M(TPL,F Toshiba Semiconductor and Storage docget.jsp?did=158243&prodName=TLX9152M Description: PHOTORELAY ROHS AEC-Q101
Packaging: Cut Tape (CT)
Package / Case: 16-SOIC (0.295", 7.50mm Width)
Output Type: DC
Mounting Type: Surface Mount
Voltage - Input: 1.65VDC
Circuit: SPST-NO (1 Form A)
Operating Temperature: -40°C ~ 125°C
Load Current: 50 mA
Supplier Device Package: 16-SO
Grade: Automotive
Voltage - Load: 0 V ~ 900 V
On-State Resistance (Max): 400 Ohms
Qualification: AEC-Q101
на замовлення 1440 шт:
термін постачання 21-31 дні (днів)
1+440.58 грн
10+319.51 грн
100+257.80 грн
500+221.98 грн
В кошику  од. на суму  грн.
TLP3475W(TP,E TLP3475W(TP,E Toshiba Semiconductor and Storage datasheet_en_20230824.pdf?did=153823 Description: PHOTORELAY; HIGH FREQUENCY; ROHS
Packaging: Tape & Reel (TR)
Package / Case: 4-SMD (0.096", 2.45mm)
Output Type: DC
Mounting Type: Surface Mount
Voltage - Input: 1.27VDC
Circuit: SPST-NO (1 Form A)
Operating Temperature: -40°C ~ 110°C
Termination Style: SMD (SMT) Tab
Load Current: 300 mA
Supplier Device Package: 4-VSON (1.45x2.45)
Voltage - Load: 0 V ~ 50 V
On-State Resistance (Max): 1.5 Ohms
на замовлення 3000 шт:
термін постачання 21-31 дні (днів)
3000+255.09 грн
Мінімальне замовлення: 3000
В кошику  од. на суму  грн.
TLP3475W(TP,E TLP3475W(TP,E Toshiba Semiconductor and Storage datasheet_en_20230824.pdf?did=153823 Description: PHOTORELAY; HIGH FREQUENCY; ROHS
Packaging: Cut Tape (CT)
Package / Case: 4-SMD (0.096", 2.45mm)
Output Type: DC
Mounting Type: Surface Mount
Voltage - Input: 1.27VDC
Circuit: SPST-NO (1 Form A)
Operating Temperature: -40°C ~ 110°C
Termination Style: SMD (SMT) Tab
Load Current: 300 mA
Supplier Device Package: 4-VSON (1.45x2.45)
Voltage - Load: 0 V ~ 50 V
On-State Resistance (Max): 1.5 Ohms
на замовлення 3880 шт:
термін постачання 21-31 дні (днів)
1+503.52 грн
10+367.09 грн
100+298.03 грн
500+251.43 грн
В кошику  од. на суму  грн.
TLP3483(TP,E Toshiba Semiconductor and Storage Description: PHOTORELAY
Packaging: Tape & Reel (TR)
Package / Case: 4-LDFN
Output Type: DC
Mounting Type: Surface Mount
Voltage - Input: 1.2VDC
Circuit: SPST-NO (1 Form A)
Operating Temperature: -40°C ~ 110°C
Load Current: 350 mA
Supplier Device Package: S-VSON4T (3.4x2.1)
Voltage - Load: 0 V ~ 200 V
On-State Resistance (Max): 8 Ohms
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TLP176D(TP,M,F) TLP176D(TP,M,F) Toshiba Semiconductor and Storage docget.jsp?did=17004&prodName=TLP176D Description: PHOTORELAY MOSFET OUT 8-SOP
Packaging: Tape & Reel (TR)
Package / Case: 4-SOP (0.173", 4.40mm)
Output Type: AC, DC
Mounting Type: Surface Mount
Voltage - Input: 1.15VDC
Circuit: SPST-NO (1 Form A)
Operating Temperature: -40°C ~ 85°C
Termination Style: Gull Wing
Load Current: 200 mA
Approval Agency: cUL, UL, VDE
Supplier Device Package: 4-SOP
Voltage - Load: 0 V ~ 200 V
On-State Resistance (Max): 8 Ohms
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TLP223GA(F TLP223GA(F Toshiba Semiconductor and Storage datasheet_en_20220202.pdf?did=140401 Description: PHOTORELAY 400V 6-DIP
Packaging: Tube
Package / Case: 4-DIP (0.300", 7.62mm)
Output Type: AC, DC
Mounting Type: Through Hole
Voltage - Input: 1.27VDC
Circuit: SPST-NO (1 Form A)
Operating Temperature: -40°C ~ 110°C
Termination Style: PC Pin
Load Current: 120 mA
Approval Agency: cUL, UL, VDE
Supplier Device Package: 4-DIP
Voltage - Load: 0 V ~ 400 V
On-State Resistance (Max): 35 Ohms
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TK4R9E15Q5,S1X TK4R9E15Q5,S1X Toshiba Semiconductor and Storage TK4R9E15Q5_datasheet_en_20240617.pdf?did=158311&prodName=TK4R9E15Q5 Description: 150V UMOS10-HSD TO-220 4.9MOHM
Packaging: Tube
Package / Case: TO-220-3
Mounting Type: Through Hole
Operating Temperature: 175°C
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 120A (Tc)
Rds On (Max) @ Id, Vgs: 4.9mOhm @ 50A, 10V
Power Dissipation (Max): 300W (Tc)
Vgs(th) (Max) @ Id: 4.5V @ 2.2mA
Supplier Device Package: TO-220
Drive Voltage (Max Rds On, Min Rds On): 8V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 150 V
Gate Charge (Qg) (Max) @ Vgs: 96 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 7820 pF @ 75 V
на замовлення 132 шт:
термін постачання 21-31 дні (днів)
2+287.50 грн
50+219.00 грн
100+214.50 грн
Мінімальне замовлення: 2
В кошику  од. на суму  грн.
TK115N65Z5,S1F TK115N65Z5,S1F Toshiba Semiconductor and Storage TK115N65Z5_datasheet_en_20240215.pdf?did=157728&prodName=TK115N65Z5 Description: N-CH MOSFET, 650 V, 0.115 @10V,
Packaging: Tube
Package / Case: TO-247-3
Mounting Type: Through Hole
Operating Temperature: 150°C
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 24A (Ta)
Rds On (Max) @ Id, Vgs: 115mOhm @ 12A, 10V
Power Dissipation (Max): 190W (Tc)
Vgs(th) (Max) @ Id: 4.5V @ 1.02mA
Supplier Device Package: TO-247
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±30V
Drain to Source Voltage (Vdss): 650 V
Gate Charge (Qg) (Max) @ Vgs: 42 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 2280 pF @ 300 V
на замовлення 60 шт:
термін постачання 21-31 дні (днів)
1+494.97 грн
30+273.81 грн
В кошику  од. на суму  грн.
TMPM366FYXBG Toshiba Semiconductor and Storage TMPM366FxXBG_7-17-13.pdf Description: IC MCU 32BIT 256KB FLSH 109TFBGA
Packaging: Tray
Package / Case: 109-TFBGA
Mounting Type: Surface Mount
Speed: 48MHz
Program Memory Size: 256KB (256K x 8)
RAM Size: 48K x 8
Operating Temperature: -40°C ~ 85°C (TA)
Oscillator Type: Internal
Program Memory Type: FLASH
Core Processor: ARM® Cortex®-M3
Data Converters: A/D 12x12b
Core Size: 32-Bit
Voltage - Supply (Vcc/Vdd): 2.7V ~ 3.6V
Connectivity: I2C, SIO, SPI, UART/USART
Peripherals: DMA, LVD, WDT
Supplier Device Package: 109-TFBGA (9x9)
Number of I/O: 73
DigiKey Programmable: Not Verified
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TMPM366FDXBG Toshiba Semiconductor and Storage TMPM366FxXBG_7-17-13.pdf Description: IC MCU 32BIT 512KB FLSH 109TFBGA
Packaging: Tray
Package / Case: 109-TFBGA
Mounting Type: Surface Mount
Speed: 48MHz
Program Memory Size: 512KB (512K x 8)
RAM Size: 64K x 8
Operating Temperature: -40°C ~ 85°C (TA)
Oscillator Type: Internal
Program Memory Type: FLASH
Core Processor: ARM® Cortex®-M3
Data Converters: A/D 12x12b
Core Size: 32-Bit
Voltage - Supply (Vcc/Vdd): 2.7V ~ 3.6V
Connectivity: I2C, SIO, UART/USART
Peripherals: DMA, PWM, WDT
Supplier Device Package: 109-TFBGA (9x9)
Number of I/O: 74
DigiKey Programmable: Not Verified
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TMPM37AFSQG,EL Toshiba Semiconductor and Storage Description: IC MCU 32BIT 64KB FLASH 32VQFN
Packaging: Tape & Reel (TR)
Package / Case: 32-VFQFN Exposed Pad
Mounting Type: Surface Mount
Speed: 40MHz
Program Memory Size: 64KB (64K x 8)
RAM Size: 4K x 8
Operating Temperature: -40°C ~ 85°C
Oscillator Type: External, Internal
Program Memory Type: FLASH
Core Processor: ARM® Cortex®-M3
Data Converters: A/D 5x12b SAR
Core Size: 32-Bit
Voltage - Supply (Vcc/Vdd): 4.5V ~ 5.5V
Connectivity: I2C, SIO, UART/USART
Peripherals: POR, PWM, Voltage Detect, WDT
Supplier Device Package: 32-VQFN (5x5)
Number of I/O: 13
DigiKey Programmable: Not Verified
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В кошику  од. на суму  грн.
RN2418,LF RN2418,LF Toshiba Semiconductor and Storage docget.jsp?did=18883&prodName=RN2418 Description: TRANS PREBIAS PNP 50V 0.1A SMINI
Packaging: Tape & Reel (TR)
Package / Case: TO-236-3, SC-59, SOT-23-3
Mounting Type: Surface Mount
Transistor Type: PNP - Pre-Biased
Vce Saturation (Max) @ Ib, Ic: 300mV @ 250µA, 5mA
Current - Collector Cutoff (Max): 500nA
DC Current Gain (hFE) (Min) @ Ic, Vce: 50 @ 10mA, 5V
Supplier Device Package: S-Mini
Current - Collector (Ic) (Max): 100 mA
Voltage - Collector Emitter Breakdown (Max): 50 V
Power - Max: 200 mW
Frequency - Transition: 200 MHz
Resistor - Base (R1): 47 kOhms
Resistor - Emitter Base (R2): 10 kOhms
Resistors Included: R1 and R2
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RN2418,LF RN2418,LF Toshiba Semiconductor and Storage docget.jsp?did=18883&prodName=RN2418 Description: TRANS PREBIAS PNP 50V 0.1A SMINI
Packaging: Cut Tape (CT)
Package / Case: TO-236-3, SC-59, SOT-23-3
Mounting Type: Surface Mount
Transistor Type: PNP - Pre-Biased
Vce Saturation (Max) @ Ib, Ic: 300mV @ 250µA, 5mA
Current - Collector Cutoff (Max): 500nA
DC Current Gain (hFE) (Min) @ Ic, Vce: 50 @ 10mA, 5V
Supplier Device Package: S-Mini
Current - Collector (Ic) (Max): 100 mA
Voltage - Collector Emitter Breakdown (Max): 50 V
Power - Max: 200 mW
Frequency - Transition: 200 MHz
Resistor - Base (R1): 47 kOhms
Resistor - Emitter Base (R2): 10 kOhms
Resistors Included: R1 and R2
на замовлення 2947 шт:
термін постачання 21-31 дні (днів)
29+10.88 грн
50+6.06 грн
100+3.76 грн
500+2.55 грн
1000+2.24 грн
Мінімальне замовлення: 29
В кошику  од. на суму  грн.
RN1418,LF RN1418,LF Toshiba Semiconductor and Storage docget.jsp?did=18796&prodName=RN1418 Description: TRANS PREBIAS NPN 50V 0.1A SMINI
Packaging: Tape & Reel (TR)
Package / Case: TO-236-3, SC-59, SOT-23-3
Mounting Type: Surface Mount
Transistor Type: NPN - Pre-Biased
Vce Saturation (Max) @ Ib, Ic: 300mV @ 250µA, 5mA
Current - Collector Cutoff (Max): 500nA
DC Current Gain (hFE) (Min) @ Ic, Vce: 50 @ 10mA, 5V
Supplier Device Package: S-Mini
Current - Collector (Ic) (Max): 100 mA
Voltage - Collector Emitter Breakdown (Max): 50 V
Power - Max: 200 mW
Frequency - Transition: 250 MHz
Resistor - Base (R1): 47 kOhms
Resistor - Emitter Base (R2): 10 kOhms
Resistors Included: R1 and R2
товару немає в наявності
В кошику  од. на суму  грн.
RN1418,LF RN1418,LF Toshiba Semiconductor and Storage docget.jsp?did=18796&prodName=RN1418 Description: TRANS PREBIAS NPN 50V 0.1A SMINI
Packaging: Cut Tape (CT)
Package / Case: TO-236-3, SC-59, SOT-23-3
Mounting Type: Surface Mount
Transistor Type: NPN - Pre-Biased
Vce Saturation (Max) @ Ib, Ic: 300mV @ 250µA, 5mA
Current - Collector Cutoff (Max): 500nA
DC Current Gain (hFE) (Min) @ Ic, Vce: 50 @ 10mA, 5V
Supplier Device Package: S-Mini
Current - Collector (Ic) (Max): 100 mA
Voltage - Collector Emitter Breakdown (Max): 50 V
Power - Max: 200 mW
Frequency - Transition: 250 MHz
Resistor - Base (R1): 47 kOhms
Resistor - Emitter Base (R2): 10 kOhms
Resistors Included: R1 and R2
на замовлення 171 шт:
термін постачання 21-31 дні (днів)
29+10.88 грн
50+6.06 грн
100+3.76 грн
Мінімальне замовлення: 29
В кошику  од. на суму  грн.
74HC00D 74HC00D Toshiba Semiconductor and Storage docget.jsp?did=36764&prodName=74HC00D Description: IC GATE NAND 4CH 2-INP 14SOIC
Packaging: Tape & Reel (TR)
Package / Case: 14-SOIC (0.154", 3.90mm Width)
Mounting Type: Surface Mount
Logic Type: NAND Gate
Operating Temperature: -40°C ~ 125°C
Voltage - Supply: 2V ~ 6V
Current - Output High, Low: 5.2mA, 5.2mA
Number of Inputs: 2
Supplier Device Package: 14-SOIC
Input Logic Level - High: 1.5V ~ 4.2V
Input Logic Level - Low: 0.5V ~ 1.8V
Max Propagation Delay @ V, Max CL: 13ns @ 6V, 50pF
Number of Circuits: 4
Current - Quiescent (Max): 1 µA
на замовлення 2500 шт:
термін постачання 21-31 дні (днів)
2500+9.71 грн
Мінімальне замовлення: 2500
В кошику  од. на суму  грн.
74HC00D 74HC00D Toshiba Semiconductor and Storage docget.jsp?did=36764&prodName=74HC00D Description: IC GATE NAND 4CH 2-INP 14SOIC
Packaging: Cut Tape (CT)
Package / Case: 14-SOIC (0.154", 3.90mm Width)
Mounting Type: Surface Mount
Logic Type: NAND Gate
Operating Temperature: -40°C ~ 125°C
Voltage - Supply: 2V ~ 6V
Current - Output High, Low: 5.2mA, 5.2mA
Number of Inputs: 2
Supplier Device Package: 14-SOIC
Input Logic Level - High: 1.5V ~ 4.2V
Input Logic Level - Low: 0.5V ~ 1.8V
Max Propagation Delay @ V, Max CL: 13ns @ 6V, 50pF
Number of Circuits: 4
Current - Quiescent (Max): 1 µA
на замовлення 4343 шт:
термін постачання 21-31 дні (днів)
14+23.31 грн
20+15.26 грн
25+13.56 грн
100+10.96 грн
250+10.13 грн
500+9.62 грн
1000+9.06 грн
Мінімальне замовлення: 14
В кошику  од. на суму  грн.
CMH07,LQ CMH07,LQ Toshiba Semiconductor and Storage CMH07_datasheet_en_20181115.pdf?did=20248&prodName=CMH07 Description: 200 V/2 A RECTIFIER DIODE, M-FLA
Packaging: Tape & Reel (TR)
Package / Case: SOD-128
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 100 ns
Technology: Standard
Current - Average Rectified (Io): 2A
Supplier Device Package: M-FLAT (2.4x3.8)
Operating Temperature - Junction: -40°C ~ 150°C
Voltage - DC Reverse (Vr) (Max): 200 V
Voltage - Forward (Vf) (Max) @ If: 980 mV @ 2 A
Current - Reverse Leakage @ Vr: 10 µA @ 200 V
на замовлення 6000 шт:
термін постачання 21-31 дні (днів)
3000+12.66 грн
6000+11.19 грн
Мінімальне замовлення: 3000
В кошику  од. на суму  грн.
CMH07,LQ CMH07,LQ Toshiba Semiconductor and Storage CMH07_datasheet_en_20181115.pdf?did=20248&prodName=CMH07 Description: 200 V/2 A RECTIFIER DIODE, M-FLA
Packaging: Cut Tape (CT)
Package / Case: SOD-128
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 100 ns
Technology: Standard
Current - Average Rectified (Io): 2A
Supplier Device Package: M-FLAT (2.4x3.8)
Operating Temperature - Junction: -40°C ~ 150°C
Voltage - DC Reverse (Vr) (Max): 200 V
Voltage - Forward (Vf) (Max) @ If: 980 mV @ 2 A
Current - Reverse Leakage @ Vr: 10 µA @ 200 V
на замовлення 6000 шт:
термін постачання 21-31 дні (днів)
6+54.39 грн
10+32.85 грн
100+21.23 грн
500+15.23 грн
1000+13.72 грн
Мінімальне замовлення: 6
В кошику  од. на суму  грн.
TC74HC123AF TC74HC123AF Toshiba Semiconductor and Storage TC74HC123AF_datasheet_en_20161202.pdf?did=8561&prodName=TC74HC123AF Description: SOP16 DUAL MONOSTABLE MULTIVIBRA
Packaging: Tape & Reel (TR)
Package / Case: 16-SOIC (0.209", 5.30mm Width)
Mounting Type: Surface Mount
Logic Type: Monostable
Operating Temperature: -40°C ~ 85°C
Propagation Delay: 23 ns
Independent Circuits: 2
Current - Output High, Low: 5.2mA, 5.2mA
Schmitt Trigger Input: Yes
Supplier Device Package: 16-SOP
Voltage - Supply: 2 V ~ 6 V
товару немає в наявності
В кошику  од. на суму  грн.
TCR3LM50A,RF TCR3LM50A,RF Toshiba Semiconductor and Storage TCR3LM50A_datasheet_en_20241028.pdf?did=151501&prodName=TCR3LM50A Description: OUTPUT LDO REGULATOR 300 MA FIXE
Packaging: Tape & Reel (TR)
Package / Case: 4-XDFN Exposed Pad
Output Type: Fixed
Mounting Type: Surface Mount
Current - Output: 300mA
Operating Temperature: -40°C ~ 85°C
Output Configuration: Positive
Current - Quiescent (Iq): 2.2 µA
Voltage - Input (Max): 5.5V
Number of Regulators: 1
Supplier Device Package: 4-DFN (1x1)
Voltage - Output (Min/Fixed): 5V
Control Features: Enable
PSRR: 74dB ~ 43dB (100Hz ~ 100kHz)
Voltage Dropout (Max): 0.205V @ 200mA
Protection Features: Over Current, Over Temperature
на замовлення 10000 шт:
термін постачання 21-31 дні (днів)
5000+6.07 грн
10000+5.68 грн
Мінімальне замовлення: 5000
В кошику  од. на суму  грн.
TCR3LM50A,RF TCR3LM50A,RF Toshiba Semiconductor and Storage TCR3LM50A_datasheet_en_20241028.pdf?did=151501&prodName=TCR3LM50A Description: OUTPUT LDO REGULATOR 300 MA FIXE
Packaging: Cut Tape (CT)
Package / Case: 4-XDFN Exposed Pad
Output Type: Fixed
Mounting Type: Surface Mount
Current - Output: 300mA
Operating Temperature: -40°C ~ 85°C
Output Configuration: Positive
Current - Quiescent (Iq): 2.2 µA
Voltage - Input (Max): 5.5V
Number of Regulators: 1
Supplier Device Package: 4-DFN (1x1)
Voltage - Output (Min/Fixed): 5V
Control Features: Enable
PSRR: 74dB ~ 43dB (100Hz ~ 100kHz)
Voltage Dropout (Max): 0.205V @ 200mA
Protection Features: Over Current, Over Temperature
на замовлення 10000 шт:
термін постачання 21-31 дні (днів)
22+14.76 грн
30+10.10 грн
34+8.98 грн
100+7.19 грн
250+6.61 грн
500+6.26 грн
1000+5.87 грн
2500+5.57 грн
Мінімальне замовлення: 22
В кошику  од. на суму  грн.
7UL3G34FK,LF 7UL3G34FK,LF Toshiba Semiconductor and Storage docget.jsp?did=147413&prodName=7UL3G34FK Description: IC BUFFER NON-INVERTING 3.6V US8
Packaging: Tape & Reel (TR)
Package / Case: 8-VFSOP (0.091", 2.30mm Width)
Mounting Type: Surface Mount
Number of Elements: 3
Logic Type: Buffer, Non-Inverting
Operating Temperature: -40°C ~ 125°C (TA)
Voltage - Supply: 0.9V ~ 3.6V
Number of Bits per Element: 1
Current - Output High, Low: 8mA, 8mA
Supplier Device Package: US8
на замовлення 3000 шт:
термін постачання 21-31 дні (днів)
3000+5.76 грн
Мінімальне замовлення: 3000
В кошику  од. на суму  грн.
7UL3G34FK,LF 7UL3G34FK,LF Toshiba Semiconductor and Storage docget.jsp?did=147413&prodName=7UL3G34FK Description: IC BUFFER NON-INVERTING 3.6V US8
Packaging: Cut Tape (CT)
Package / Case: 8-VFSOP (0.091", 2.30mm Width)
Mounting Type: Surface Mount
Number of Elements: 3
Logic Type: Buffer, Non-Inverting
Operating Temperature: -40°C ~ 125°C (TA)
Voltage - Supply: 0.9V ~ 3.6V
Number of Bits per Element: 1
Current - Output High, Low: 8mA, 8mA
Supplier Device Package: US8
на замовлення 3856 шт:
термін постачання 21-31 дні (днів)
20+15.54 грн
31+9.80 грн
35+8.65 грн
100+6.94 грн
250+6.38 грн
500+6.04 грн
1000+5.66 грн
Мінімальне замовлення: 20
В кошику  од. на суму  грн.
2SC4738-Y,LXHF 2SC4738-Y,LXHF Toshiba Semiconductor and Storage docget.jsp?did=19314&prodName=2SC4738 Description: NPN BIPOLAR TRANSISTOR 50V 0.15A
Packaging: Tape & Reel (TR)
Package / Case: SC-75, SOT-416
Mounting Type: Surface Mount
Transistor Type: NPN
Vce Saturation (Max) @ Ib, Ic: 250mV @ 10mA, 100mA
Current - Collector Cutoff (Max): 100nA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce: 120 @ 2mA, 6V
Frequency - Transition: 80MHz
Supplier Device Package: SSM
Grade: Automotive
Current - Collector (Ic) (Max): 150 mA
Voltage - Collector Emitter Breakdown (Max): 50 V
Power - Max: 120 mW
Qualification: AEC-Q101
на замовлення 6000 шт:
термін постачання 21-31 дні (днів)
3000+2.73 грн
6000+2.54 грн
Мінімальне замовлення: 3000
В кошику  од. на суму  грн.
2SC4738-Y,LXHF 2SC4738-Y,LXHF Toshiba Semiconductor and Storage docget.jsp?did=19314&prodName=2SC4738 Description: NPN BIPOLAR TRANSISTOR 50V 0.15A
Packaging: Cut Tape (CT)
Package / Case: SC-75, SOT-416
Mounting Type: Surface Mount
Transistor Type: NPN
Vce Saturation (Max) @ Ib, Ic: 250mV @ 10mA, 100mA
Current - Collector Cutoff (Max): 100nA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce: 120 @ 2mA, 6V
Frequency - Transition: 80MHz
Supplier Device Package: SSM
Grade: Automotive
Current - Collector (Ic) (Max): 150 mA
Voltage - Collector Emitter Breakdown (Max): 50 V
Power - Max: 120 mW
Qualification: AEC-Q101
на замовлення 6000 шт:
термін постачання 21-31 дні (днів)
45+6.99 грн
64+4.71 грн
73+4.13 грн
100+3.27 грн
250+2.97 грн
500+2.80 грн
1000+2.61 грн
Мінімальне замовлення: 45
В кошику  од. на суму  грн.
RN1114MFV,L3F RN1114MFV,L3F Toshiba Semiconductor and Storage docget.jsp?did=721&prodName=RN1114MFV Description: TRANS PREBIAS NPN 50V 0.1A VESM
Packaging: Tape & Reel (TR)
Package / Case: SOT-723
Mounting Type: Surface Mount
Transistor Type: NPN - Pre-Biased
Vce Saturation (Max) @ Ib, Ic: 300mV @ 250µA, 5mA
Current - Collector Cutoff (Max): 500nA
DC Current Gain (hFE) (Min) @ Ic, Vce: 50 @ 10mA, 5V
Supplier Device Package: VESM
Current - Collector (Ic) (Max): 100 mA
Voltage - Collector Emitter Breakdown (Max): 50 V
Power - Max: 150 mW
Frequency - Transition: 250 MHz
Resistor - Base (R1): 1 kOhms
Resistor - Emitter Base (R2): 10 kOhms
Resistors Included: R1 and R2
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RN1114MFV,L3F RN1114MFV,L3F Toshiba Semiconductor and Storage docget.jsp?did=721&prodName=RN1114MFV Description: TRANS PREBIAS NPN 50V 0.1A VESM
Packaging: Cut Tape (CT)
Package / Case: SOT-723
Mounting Type: Surface Mount
Transistor Type: NPN - Pre-Biased
Vce Saturation (Max) @ Ib, Ic: 300mV @ 250µA, 5mA
Current - Collector Cutoff (Max): 500nA
DC Current Gain (hFE) (Min) @ Ic, Vce: 50 @ 10mA, 5V
Supplier Device Package: VESM
Current - Collector (Ic) (Max): 100 mA
Voltage - Collector Emitter Breakdown (Max): 50 V
Power - Max: 150 mW
Frequency - Transition: 250 MHz
Resistor - Base (R1): 1 kOhms
Resistor - Emitter Base (R2): 10 kOhms
Resistors Included: R1 and R2
на замовлення 6394 шт:
термін постачання 21-31 дні (днів)
27+11.66 грн
42+7.18 грн
100+4.44 грн
500+3.03 грн
1000+2.67 грн
2000+2.36 грн
Мінімальне замовлення: 27
В кошику  од. на суму  грн.
RN2114MFV,L3F RN2114MFV,L3F Toshiba Semiconductor and Storage docget.jsp?did=742&prodName=RN2114MFV Description: TRANS PREBIAS PNP 50V 0.1A VESM
Packaging: Tape & Reel (TR)
Package / Case: SOT-723
Mounting Type: Surface Mount
Transistor Type: PNP - Pre-Biased
Vce Saturation (Max) @ Ib, Ic: 300mV @ 500µA, 5mA
Current - Collector Cutoff (Max): 500nA
DC Current Gain (hFE) (Min) @ Ic, Vce: 50 @ 10mA, 5V
Supplier Device Package: VESM
Current - Collector (Ic) (Max): 100 mA
Voltage - Collector Emitter Breakdown (Max): 50 V
Power - Max: 150 mW
Resistor - Base (R1): 1 kOhms
Resistor - Emitter Base (R2): 10 kOhms
Resistors Included: R1 and R2
товару немає в наявності
В кошику  од. на суму  грн.
RN2114MFV,L3F RN2114MFV,L3F Toshiba Semiconductor and Storage docget.jsp?did=742&prodName=RN2114MFV Description: TRANS PREBIAS PNP 50V 0.1A VESM
Packaging: Cut Tape (CT)
Package / Case: SOT-723
Mounting Type: Surface Mount
Transistor Type: PNP - Pre-Biased
Vce Saturation (Max) @ Ib, Ic: 300mV @ 500µA, 5mA
Current - Collector Cutoff (Max): 500nA
DC Current Gain (hFE) (Min) @ Ic, Vce: 50 @ 10mA, 5V
Supplier Device Package: VESM
Current - Collector (Ic) (Max): 100 mA
Voltage - Collector Emitter Breakdown (Max): 50 V
Power - Max: 150 mW
Resistor - Base (R1): 1 kOhms
Resistor - Emitter Base (R2): 10 kOhms
Resistors Included: R1 and R2
на замовлення 7856 шт:
термін постачання 21-31 дні (днів)
27+11.66 грн
42+7.18 грн
100+4.44 грн
500+3.03 грн
1000+2.67 грн
2000+2.36 грн
Мінімальне замовлення: 27
В кошику  од. на суму  грн.
TLP620M(Y-TP1,E
TLP620M(Y-TP1,E
Виробник: Toshiba Semiconductor and Storage
Description: OPTOISOLATOR 5KV 1CH TRANS 4-SMD
Packaging: Tape & Reel (TR)
Package / Case: 4-SMD (0.300", 7.62mm)
Output Type: Transistor
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 125°C
Voltage - Forward (Vf) (Typ): 1.25V
Input Type: AC, DC
Current - Output / Channel: 50mA
Voltage - Isolation: 5000Vrms
Current Transfer Ratio (Min): 50% @ 5mA
Vce Saturation (Max): 300mV
Current Transfer Ratio (Max): 600% @ 5mA
Supplier Device Package: 4-SMD
Voltage - Output (Max): 80V
Turn On / Turn Off Time (Typ): 3µs, 3µs
Rise / Fall Time (Typ): 2µs, 3µs
Number of Channels: 1
Current - DC Forward (If) (Max): 50 mA
товару немає в наявності
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TLP620M(TP5,E
TLP620M(TP5,E
Виробник: Toshiba Semiconductor and Storage
Description: OPTOISOLATOR 5KV 1CH TRANS 4-SMD
Packaging: Tape & Reel (TR)
Package / Case: 4-SMD, Gull Wing
Output Type: Transistor
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 125°C
Voltage - Forward (Vf) (Typ): 1.25V
Input Type: AC, DC
Current - Output / Channel: 50mA
Voltage - Isolation: 5000Vrms
Current Transfer Ratio (Min): 50% @ 5mA
Vce Saturation (Max): 300mV
Current Transfer Ratio (Max): 600% @ 5mA
Supplier Device Package: 4-SMD
Voltage - Output (Max): 80V
Turn On / Turn Off Time (Typ): 3µs, 3µs
Rise / Fall Time (Typ): 2µs, 3µs
Number of Channels: 1
Current - DC Forward (If) (Max): 50 mA
товару немає в наявності
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TLP620M(Y-TP5,E
TLP620M(Y-TP5,E
Виробник: Toshiba Semiconductor and Storage
Description: OPTOISOLATOR 5KV 1CH TRANS 4-SMD
Packaging: Tape & Reel (TR)
Package / Case: 4-SMD, Gull Wing
Output Type: Transistor
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 125°C
Voltage - Forward (Vf) (Typ): 1.25V
Input Type: AC, DC
Current - Output / Channel: 50mA
Voltage - Isolation: 5000Vrms
Current Transfer Ratio (Min): 50% @ 5mA
Vce Saturation (Max): 300mV
Current Transfer Ratio (Max): 600% @ 5mA
Supplier Device Package: 4-SMD
Voltage - Output (Max): 80V
Turn On / Turn Off Time (Typ): 3µs, 3µs
Rise / Fall Time (Typ): 2µs, 3µs
Number of Channels: 1
Current - DC Forward (If) (Max): 50 mA
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TLP620M(GR-TP5,E
TLP620M(GR-TP5,E
Виробник: Toshiba Semiconductor and Storage
Description: OPTOISOLATOR 5KV 1CH TRANS 4-SMD
Packaging: Tape & Reel (TR)
Package / Case: 4-SMD, Gull Wing
Output Type: Transistor
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 125°C
Voltage - Forward (Vf) (Typ): 1.25V
Input Type: AC, DC
Current - Output / Channel: 50mA
Voltage - Isolation: 5000Vrms
Current Transfer Ratio (Min): 50% @ 5mA
Vce Saturation (Max): 300mV
Current Transfer Ratio (Max): 600% @ 5mA
Supplier Device Package: 4-SMD
Voltage - Output (Max): 80V
Turn On / Turn Off Time (Typ): 3µs, 3µs
Rise / Fall Time (Typ): 2µs, 3µs
Number of Channels: 1
Current - DC Forward (If) (Max): 50 mA
товару немає в наявності
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TMPM380FWFG
TMPM380FWFG
Виробник: Toshiba Semiconductor and Storage
Description: IC MCU 32BIT 128KB FLASH 100LQFP
Packaging: Tray
Package / Case: 100-LQFP
Mounting Type: Surface Mount
Speed: 40MHz
Program Memory Size: 128KB (128K x 8)
RAM Size: 12K x 8
Operating Temperature: -40°C ~ 85°C (TA)
Oscillator Type: External
Program Memory Type: FLASH
Core Processor: ARM® Cortex®-M3
Data Converters: A/D 18x12b
Core Size: 32-Bit
Voltage - Supply (Vcc/Vdd): 4V ~ 5.5V
Connectivity: I2C, SIO, UART/USART
Peripherals: DMA, LVD, WDT
Supplier Device Package: 100-LQFP (14x14)
Number of I/O: 83
DigiKey Programmable: Not Verified
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TPCC8093,L1Q
TPCC8093,L1Q
Виробник: Toshiba Semiconductor and Storage
Description: MOSFET N-CH 20V 21A 8TSON
Packaging: Tape & Reel (TR)
Package / Case: 8-PowerVDFN
Mounting Type: Surface Mount
Operating Temperature: 150°C
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 21A (Ta)
Rds On (Max) @ Id, Vgs: 5.8mOhm @ 10.5A, 4.5V
Power Dissipation (Max): 1.9W (Ta), 30W (Tc)
Vgs(th) (Max) @ Id: 1.2V @ 500µA
Supplier Device Package: 8-TSON Advance (3.1x3.1)
Drive Voltage (Max Rds On, Min Rds On): 2.5V, 4.5V
Vgs (Max): ±12V
Drain to Source Voltage (Vdss): 20 V
Gate Charge (Qg) (Max) @ Vgs: 16 nC @ 5 V
Input Capacitance (Ciss) (Max) @ Vds: 1860 pF @ 10 V
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TC7WPB9306FK,LF docget.jsp?did=12388&prodName=TC7WPB9306FK
TC7WPB9306FK,LF
Виробник: Toshiba Semiconductor and Storage
Description: IC BUS SWITCH 2 X 1:1 8-SSOP
Packaging: Cut Tape (CT)
Package / Case: 8-VFSOP (0.091", 2.30mm Width)
Mounting Type: Surface Mount
Circuit: 2 x 1:1
Type: Bus Switch
Operating Temperature: -40°C ~ 85°C
Voltage - Supply: 1.65V ~ 5V, 2.3V ~ 5.5V
Independent Circuits: 1
Voltage Supply Source: Dual Supply
Supplier Device Package: 8-SSOP
товару немає в наявності
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7UL1G34NX,ELF docget.jsp?did=156995&prodName=7UL1G34NX
7UL1G34NX,ELF
Виробник: Toshiba Semiconductor and Storage
Description: 1 GATE LOGIC, BUFFER, XSON6, NON
Packaging: Tape & Reel (TR)
Package / Case: 6-XFDFN
Mounting Type: Surface Mount
Number of Elements: 1
Logic Type: Buffer, Non-Inverting
Operating Temperature: -40°C ~ 85°C (TA)
Voltage - Supply: 0.9V ~ 3.6V
Number of Bits per Element: 1
Current - Output High, Low: 8mA, 8mA
Supplier Device Package: 6-MP6D (1.45x1)
на замовлення 5000 шт:
термін постачання 21-31 дні (днів)
Кількість Ціна
5000+5.85 грн
Мінімальне замовлення: 5000
В кошику  од. на суму  грн.
7UL1G34NX,ELF docget.jsp?did=156995&prodName=7UL1G34NX
7UL1G34NX,ELF
Виробник: Toshiba Semiconductor and Storage
Description: 1 GATE LOGIC, BUFFER, XSON6, NON
Packaging: Cut Tape (CT)
Package / Case: 6-XFDFN
Mounting Type: Surface Mount
Number of Elements: 1
Logic Type: Buffer, Non-Inverting
Operating Temperature: -40°C ~ 85°C (TA)
Voltage - Supply: 0.9V ~ 3.6V
Number of Bits per Element: 1
Current - Output High, Low: 8mA, 8mA
Supplier Device Package: 6-MP6D (1.45x1)
на замовлення 5000 шт:
термін постачання 21-31 дні (днів)
Кількість Ціна
20+15.54 грн
30+10.10 грн
34+8.92 грн
100+7.16 грн
250+6.58 грн
500+6.23 грн
1000+5.84 грн
2500+5.67 грн
Мінімальне замовлення: 20
В кошику  од. на суму  грн.
TMPM4NRF10XBG
Виробник: Toshiba Semiconductor and Storage
Description: MCU, DATA PROCESSING, ARM CORTEX
Packaging: Tray
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2SD2695,T6F(J 2SD2695_2009-12-21.pdf
2SD2695,T6F(J
Виробник: Toshiba Semiconductor and Storage
Description: TRANS NPN 60V 2A TO-92MOD
Packaging: Bulk
Package / Case: TO-226-3, TO-92-3 Long Body
Mounting Type: Through Hole
Transistor Type: NPN
Operating Temperature: 150°C (TJ)
Vce Saturation (Max) @ Ib, Ic: 1.5V @ 1mA, 1A
Current - Collector Cutoff (Max): 10µA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce: 2000 @ 1A, 2V
Frequency - Transition: 100MHz
Supplier Device Package: TO-92MOD
Current - Collector (Ic) (Max): 2 A
Voltage - Collector Emitter Breakdown (Max): 60 V
Power - Max: 900 mW
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TMPM4GNF10FG TMPM3HMFDAFG_datasheet_en_20250221.pdf
TMPM4GNF10FG
Виробник: Toshiba Semiconductor and Storage
Description: IC MCU 32BIT 1MB FLASH 100LQFP
Packaging: Tray
Package / Case: 100-LQFP
Mounting Type: Surface Mount
Speed: 200MHz
Program Memory Size: 1MB (1M x 8)
RAM Size: 256K x 8
Operating Temperature: -40°C ~ 85°C
Oscillator Type: External, Internal
Program Memory Type: FLASH
EEPROM Size: 32K x 8
Core Processor: ARM® Cortex®-M4F
Data Converters: A/D 24x12b SAR; D/A 2x8b
Core Size: 32-Bit
Voltage - Supply (Vcc/Vdd): 2.7V ~ 3.6V
Connectivity: EBI/EMI, FIFO, I2C, IrDA, SIO, SPI, UART/USART
Peripherals: DMA, I2S, LVD, POR, PWM, WDT
Supplier Device Package: 100-LQFP (14x14)
Number of I/O: 91
DigiKey Programmable: Not Verified
товару немає в наявності
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DCM340D01(AS,EL) standard-digital-isolators.html
DCM340D01(AS,EL)
Виробник: Toshiba Semiconductor and Storage
Description: 4-CH (4:0) AECQ HIGH SPEED DIGIT
Packaging: Tape & Reel (TR)
Package / Case: 16-SOIC (0.295", 7.50mm Width)
Mounting Type: Surface Mount
Type: SPI
Operating Temperature: -40°C ~ 125°C
Voltage - Supply: 3V ~ 5.5V
Data Rate: 50Mbps
Technology: Magnetic Coupling
Voltage - Isolation: 5000Vrms
Inputs - Side 1/Side 2: 4/0
Supplier Device Package: 16-SOIC
Rise / Fall Time (Typ): 0.9ns, 0.9ns
Common Mode Transient Immunity (Min): 100kV/µs (Typ)
Propagation Delay tpLH / tpHL (Max): 18.4ns, 18.4ns
Isolated Power: No
Channel Type: Unidirectional
Pulse Width Distortion (Max): 5.1ns
Grade: Automotive
Number of Channels: 4
Qualification: AEC-Q100
на замовлення 1500 шт:
термін постачання 21-31 дні (днів)
Кількість Ціна
1500+123.61 грн
Мінімальне замовлення: 1500
В кошику  од. на суму  грн.
DCM340D01(AS,EL) standard-digital-isolators.html
DCM340D01(AS,EL)
Виробник: Toshiba Semiconductor and Storage
Description: 4-CH (4:0) AECQ HIGH SPEED DIGIT
Packaging: Cut Tape (CT)
Package / Case: 16-SOIC (0.295", 7.50mm Width)
Mounting Type: Surface Mount
Type: SPI
Operating Temperature: -40°C ~ 125°C
Voltage - Supply: 3V ~ 5.5V
Data Rate: 50Mbps
Technology: Magnetic Coupling
Voltage - Isolation: 5000Vrms
Inputs - Side 1/Side 2: 4/0
Supplier Device Package: 16-SOIC
Rise / Fall Time (Typ): 0.9ns, 0.9ns
Common Mode Transient Immunity (Min): 100kV/µs (Typ)
Propagation Delay tpLH / tpHL (Max): 18.4ns, 18.4ns
Isolated Power: No
Channel Type: Unidirectional
Pulse Width Distortion (Max): 5.1ns
Grade: Automotive
Number of Channels: 4
Qualification: AEC-Q100
на замовлення 1500 шт:
термін постачання 21-31 дні (днів)
Кількість Ціна
2+227.67 грн
10+164.39 грн
25+150.79 грн
100+127.44 грн
250+120.74 грн
500+116.69 грн
Мінімальне замовлення: 2
В кошику  од. на суму  грн.
TCB001HQ TCB001HQ_datasheet_en_20220727.pdf?did=29411&prodName=TCB001HQ
TCB001HQ
Виробник: Toshiba Semiconductor and Storage
Description: AUDIO POWER AMPLIFIER, CLASS-AB,
Packaging: Tube
Package / Case: 25-SIP Formed Leads
Mounting Type: Through Hole
Supplier Device Package: 25-HZIP
Output Type: 4-Channel (Quad)
Type: Class AB
Operating Temperature: -40°C ~ 105°C (TA)
Voltage - Supply: 6V ~ 18V
Max Output Power x Channels @ Load: 45W x 4 @ 4Ohm
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TB62D786FTG,EL
TB62D786FTG,EL
Виробник: Toshiba Semiconductor and Storage
Description: IC LED DRVR LIN PWM 40MA 24VQFN
Packaging: Tape & Reel (TR)
Package / Case: 24-VFQFN Exposed Pad
Voltage - Output: 28V
Mounting Type: Surface Mount
Number of Outputs: 9
Type: Linear
Operating Temperature: -40°C ~ 85°C (TA)
Current - Output / Channel: 40mA
Internal Switch(s): Yes
Supplier Device Package: 24-VQFN (4x4)
Dimming: PWM
Voltage - Supply (Min): 7V
Voltage - Supply (Max): 28V
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TB62D786FTG,EL
TB62D786FTG,EL
Виробник: Toshiba Semiconductor and Storage
Description: IC LED DRVR LIN PWM 40MA 24VQFN
Packaging: Cut Tape (CT)
Package / Case: 24-VFQFN Exposed Pad
Voltage - Output: 28V
Mounting Type: Surface Mount
Number of Outputs: 9
Type: Linear
Operating Temperature: -40°C ~ 85°C (TA)
Current - Output / Channel: 40mA
Internal Switch(s): Yes
Supplier Device Package: 24-VQFN (4x4)
Dimming: PWM
Voltage - Supply (Min): 7V
Voltage - Supply (Max): 28V
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TRS10H120H,S1Q docget.jsp?did=158257&prodName=TRS10H120H
TRS10H120H,S1Q
Виробник: Toshiba Semiconductor and Storage
Description: DIODE SIL CARB 1200V 38A TO2472L
Packaging: Tube
Package / Case: TO-247-2
Mounting Type: Through Hole
Speed: No Recovery Time > 500mA (Io)
Reverse Recovery Time (trr): 0 ns
Technology: SiC (Silicon Carbide) Schottky
Capacitance @ Vr, F: 1148pF @ 1V, 1MHz
Current - Average Rectified (Io): 38A
Supplier Device Package: TO-247-2L
Operating Temperature - Junction: 175°C
Voltage - DC Reverse (Vr) (Max): 1200 V
Voltage - Forward (Vf) (Max) @ If: 1.45 V @ 10 A
Current - Reverse Leakage @ Vr: 80 µA @ 1200 V
на замовлення 40 шт:
термін постачання 21-31 дні (днів)
Кількість Ціна
1+607.64 грн
30+414.98 грн
В кошику  од. на суму  грн.
TRS15H120H,S1Q docget.jsp?did=158267&prodName=TRS15H120H
TRS15H120H,S1Q
Виробник: Toshiba Semiconductor and Storage
Description: DIODE SIL CARB 1200V 50A TO2472L
Packaging: Tube
Package / Case: TO-247-2
Mounting Type: Through Hole
Speed: No Recovery Time > 500mA (Io)
Reverse Recovery Time (trr): 0 ns
Technology: SiC (Silicon Carbide) Schottky
Capacitance @ Vr, F: 1673pF @ 1V, 1MHz
Current - Average Rectified (Io): 50A
Supplier Device Package: TO-247-2L
Operating Temperature - Junction: 175°C
Voltage - DC Reverse (Vr) (Max): 1200 V
Voltage - Forward (Vf) (Max) @ If: 1.45 V @ 15 A
Current - Reverse Leakage @ Vr: 100 µA @ 1200 V
на замовлення 60 шт:
термін постачання 21-31 дні (днів)
Кількість Ціна
1+805.79 грн
30+511.23 грн
В кошику  од. на суму  грн.
TRS40H120H,S1Q TRS40H120H_datasheet_en_20240903.pdf?did=158289&prodName=TRS40H120H
TRS40H120H,S1Q
Виробник: Toshiba Semiconductor and Storage
Description: 1200 V/40 A SIC SCHOTTKY BARRIER
Packaging: Tube
Package / Case: TO-247-2
Mounting Type: Through Hole
Speed: No Recovery Time > 500mA (Io)
Reverse Recovery Time (trr): 0 ns
Technology: SiC (Silicon Carbide) Schottky
Capacitance @ Vr, F: 4368pF @ 1V, 1MHz
Current - Average Rectified (Io): 102A
Supplier Device Package: TO-247-2L
Operating Temperature - Junction: 175°C
Voltage - DC Reverse (Vr) (Max): 1200 V
Voltage - Forward (Vf) (Max) @ If: 1.45 V @ 40 A
Current - Reverse Leakage @ Vr: 230 µA @ 1.2 kV
на замовлення 60 шт:
термін постачання 21-31 дні (днів)
Кількість Ціна
1+1269.68 грн
30+765.27 грн
В кошику  од. на суму  грн.
TLP532(BLL,F)
Виробник: Toshiba Semiconductor and Storage
Description: PHOTOCOUPLER
Packaging: Tube
товару немає в наявності
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TLP373(F)
Виробник: Toshiba Semiconductor and Storage
Description: PHOTOCOUPLER
Packaging: Tube
товару немає в наявності
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74LV4T125FT 74LV4T125FT_datasheet_en_20220622.pdf?did=68941&prodName=74LV4T125FT
Виробник: Toshiba Semiconductor and Storage
Description: TSSOP14 UNIDIRECTIONAL LEVEL SHI
Packaging: Tape & Reel (TR)
Package / Case: 14-TSSOP (0.173", 4.40mm Width)
Output Type: 3-State
Mounting Type: Surface Mount
Number of Elements: 4
Logic Type: Buffer, Non-Inverting
Operating Temperature: -40°C ~ 125°C (TA)
Voltage - Supply: 1.65V ~ 5.5V
Number of Bits per Element: 1
Current - Output High, Low: 16mA, 16mA
Supplier Device Package: 14-TSSOP
Grade: Automotive
Qualification: AEC-Q100
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TLX9150M(TPL,F TLX9150M_datasheet_en_20240920.pdf?did=159447&prodName=TLX9150M
TLX9150M(TPL,F
Виробник: Toshiba Semiconductor and Storage
Description: PHOTORELAY 900V AEC-Q101
Packaging: Tape & Reel (TR)
Package / Case: 12-SOIC (0.295", 7.50mm Width), 8 Leads
Output Type: AC
Mounting Type: Surface Mount
Voltage - Input: 1.65VDC
Circuit: SPST-NO (1 Form A)
Operating Temperature: -40°C ~ 125°C
Load Current: 50 mA
Supplier Device Package: 12-SO
Grade: Automotive
Voltage - Load: 0 V ~ 900 V
On-State Resistance (Max): 250 Ohms
Qualification: AEC-Q101
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TLX9150M(TPL,F TLX9150M_datasheet_en_20240920.pdf?did=159447&prodName=TLX9150M
TLX9150M(TPL,F
Виробник: Toshiba Semiconductor and Storage
Description: PHOTORELAY 900V AEC-Q101
Packaging: Cut Tape (CT)
Package / Case: 12-SOIC (0.295", 7.50mm Width), 8 Leads
Output Type: AC
Mounting Type: Surface Mount
Voltage - Input: 1.65VDC
Circuit: SPST-NO (1 Form A)
Operating Temperature: -40°C ~ 125°C
Load Current: 50 mA
Supplier Device Package: 12-SO
Grade: Automotive
Voltage - Load: 0 V ~ 900 V
On-State Resistance (Max): 250 Ohms
Qualification: AEC-Q101
на замовлення 1375 шт:
термін постачання 21-31 дні (днів)
Кількість Ціна
1+386.19 грн
10+278.13 грн
100+223.04 грн
500+188.92 грн
В кошику  од. на суму  грн.
TLP3450S(TP,E TLP3450S_datasheet_en_20240704.pdf?did=154727&prodName=TLP3450S
TLP3450S(TP,E
Виробник: Toshiba Semiconductor and Storage
Description: PHOTORELAY LOW CR
Packaging: Tape & Reel (TR)
Package / Case: 4-SMD (0.079", 2.00mm)
Output Type: DC
Mounting Type: Surface Mount
Voltage - Input: 1.24VDC
Circuit: SPST-NO (1 Form A)
Operating Temperature: -40°C ~ 110°C
Load Current: 160 mA
Supplier Device Package: S-VSON4T (2x1.45)
Voltage - Load: 0 V ~ 20 V
On-State Resistance (Max): 8.5 Ohms
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TLP3450S(TP,E TLP3450S_datasheet_en_20240704.pdf?did=154727&prodName=TLP3450S
TLP3450S(TP,E
Виробник: Toshiba Semiconductor and Storage
Description: PHOTORELAY LOW CR
Packaging: Cut Tape (CT)
Package / Case: 4-SMD (0.079", 2.00mm)
Output Type: DC
Mounting Type: Surface Mount
Voltage - Input: 1.24VDC
Circuit: SPST-NO (1 Form A)
Operating Temperature: -40°C ~ 110°C
Load Current: 160 mA
Supplier Device Package: S-VSON4T (2x1.45)
Voltage - Load: 0 V ~ 20 V
On-State Resistance (Max): 8.5 Ohms
на замовлення 2450 шт:
термін постачання 21-31 дні (днів)
Кількість Ціна
1+392.40 грн
10+282.92 грн
100+227.04 грн
500+192.70 грн
В кошику  од. на суму  грн.
TLP3431S(TP,E
TLP3431S(TP,E
Виробник: Toshiba Semiconductor and Storage
Description: PHOTORELAY; FAST SWITCHING; ROHS
Packaging: Tape & Reel (TR)
Package / Case: 4-SMD (0.079", 2.00mm)
Output Type: DC
Mounting Type: Surface Mount
Voltage - Input: 1.24VDC
Circuit: SPST-NO (1 Form A)
Operating Temperature: -40°C ~ 110°C
Load Current: 450 mA
Supplier Device Package: S-VSON4T (2x1.45)
Voltage - Load: 0 V ~ 20 V
On-State Resistance (Max): 1.2 Ohms
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TLP3431S(TP,E
TLP3431S(TP,E
Виробник: Toshiba Semiconductor and Storage
Description: PHOTORELAY; FAST SWITCHING; ROHS
Packaging: Cut Tape (CT)
Package / Case: 4-SMD (0.079", 2.00mm)
Output Type: DC
Mounting Type: Surface Mount
Voltage - Input: 1.24VDC
Circuit: SPST-NO (1 Form A)
Operating Temperature: -40°C ~ 110°C
Load Current: 450 mA
Supplier Device Package: S-VSON4T (2x1.45)
Voltage - Load: 0 V ~ 20 V
On-State Resistance (Max): 1.2 Ohms
на замовлення 2340 шт:
термін постачання 21-31 дні (днів)
Кількість Ціна
1+392.40 грн
10+282.92 грн
100+227.04 грн
500+192.70 грн
В кошику  од. на суму  грн.
TLX9152M(TPL,F docget.jsp?did=158243&prodName=TLX9152M
TLX9152M(TPL,F
Виробник: Toshiba Semiconductor and Storage
Description: PHOTORELAY ROHS AEC-Q101
Packaging: Tape & Reel (TR)
Package / Case: 16-SOIC (0.295", 7.50mm Width)
Output Type: DC
Mounting Type: Surface Mount
Voltage - Input: 1.65VDC
Circuit: SPST-NO (1 Form A)
Operating Temperature: -40°C ~ 125°C
Load Current: 50 mA
Supplier Device Package: 16-SO
Grade: Automotive
Voltage - Load: 0 V ~ 900 V
On-State Resistance (Max): 400 Ohms
Qualification: AEC-Q101
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TLX9152M(TPL,F docget.jsp?did=158243&prodName=TLX9152M
TLX9152M(TPL,F
Виробник: Toshiba Semiconductor and Storage
Description: PHOTORELAY ROHS AEC-Q101
Packaging: Cut Tape (CT)
Package / Case: 16-SOIC (0.295", 7.50mm Width)
Output Type: DC
Mounting Type: Surface Mount
Voltage - Input: 1.65VDC
Circuit: SPST-NO (1 Form A)
Operating Temperature: -40°C ~ 125°C
Load Current: 50 mA
Supplier Device Package: 16-SO
Grade: Automotive
Voltage - Load: 0 V ~ 900 V
On-State Resistance (Max): 400 Ohms
Qualification: AEC-Q101
на замовлення 1440 шт:
термін постачання 21-31 дні (днів)
Кількість Ціна
1+440.58 грн
10+319.51 грн
100+257.80 грн
500+221.98 грн
В кошику  од. на суму  грн.
TLP3475W(TP,E datasheet_en_20230824.pdf?did=153823
TLP3475W(TP,E
Виробник: Toshiba Semiconductor and Storage
Description: PHOTORELAY; HIGH FREQUENCY; ROHS
Packaging: Tape & Reel (TR)
Package / Case: 4-SMD (0.096", 2.45mm)
Output Type: DC
Mounting Type: Surface Mount
Voltage - Input: 1.27VDC
Circuit: SPST-NO (1 Form A)
Operating Temperature: -40°C ~ 110°C
Termination Style: SMD (SMT) Tab
Load Current: 300 mA
Supplier Device Package: 4-VSON (1.45x2.45)
Voltage - Load: 0 V ~ 50 V
On-State Resistance (Max): 1.5 Ohms
на замовлення 3000 шт:
термін постачання 21-31 дні (днів)
Кількість Ціна
3000+255.09 грн
Мінімальне замовлення: 3000
В кошику  од. на суму  грн.
TLP3475W(TP,E datasheet_en_20230824.pdf?did=153823
TLP3475W(TP,E
Виробник: Toshiba Semiconductor and Storage
Description: PHOTORELAY; HIGH FREQUENCY; ROHS
Packaging: Cut Tape (CT)
Package / Case: 4-SMD (0.096", 2.45mm)
Output Type: DC
Mounting Type: Surface Mount
Voltage - Input: 1.27VDC
Circuit: SPST-NO (1 Form A)
Operating Temperature: -40°C ~ 110°C
Termination Style: SMD (SMT) Tab
Load Current: 300 mA
Supplier Device Package: 4-VSON (1.45x2.45)
Voltage - Load: 0 V ~ 50 V
On-State Resistance (Max): 1.5 Ohms
на замовлення 3880 шт:
термін постачання 21-31 дні (днів)
Кількість Ціна
1+503.52 грн
10+367.09 грн
100+298.03 грн
500+251.43 грн
В кошику  од. на суму  грн.
TLP3483(TP,E
Виробник: Toshiba Semiconductor and Storage
Description: PHOTORELAY
Packaging: Tape & Reel (TR)
Package / Case: 4-LDFN
Output Type: DC
Mounting Type: Surface Mount
Voltage - Input: 1.2VDC
Circuit: SPST-NO (1 Form A)
Operating Temperature: -40°C ~ 110°C
Load Current: 350 mA
Supplier Device Package: S-VSON4T (3.4x2.1)
Voltage - Load: 0 V ~ 200 V
On-State Resistance (Max): 8 Ohms
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TLP176D(TP,M,F) docget.jsp?did=17004&prodName=TLP176D
TLP176D(TP,M,F)
Виробник: Toshiba Semiconductor and Storage
Description: PHOTORELAY MOSFET OUT 8-SOP
Packaging: Tape & Reel (TR)
Package / Case: 4-SOP (0.173", 4.40mm)
Output Type: AC, DC
Mounting Type: Surface Mount
Voltage - Input: 1.15VDC
Circuit: SPST-NO (1 Form A)
Operating Temperature: -40°C ~ 85°C
Termination Style: Gull Wing
Load Current: 200 mA
Approval Agency: cUL, UL, VDE
Supplier Device Package: 4-SOP
Voltage - Load: 0 V ~ 200 V
On-State Resistance (Max): 8 Ohms
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TLP223GA(F datasheet_en_20220202.pdf?did=140401
TLP223GA(F
Виробник: Toshiba Semiconductor and Storage
Description: PHOTORELAY 400V 6-DIP
Packaging: Tube
Package / Case: 4-DIP (0.300", 7.62mm)
Output Type: AC, DC
Mounting Type: Through Hole
Voltage - Input: 1.27VDC
Circuit: SPST-NO (1 Form A)
Operating Temperature: -40°C ~ 110°C
Termination Style: PC Pin
Load Current: 120 mA
Approval Agency: cUL, UL, VDE
Supplier Device Package: 4-DIP
Voltage - Load: 0 V ~ 400 V
On-State Resistance (Max): 35 Ohms
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TK4R9E15Q5,S1X TK4R9E15Q5_datasheet_en_20240617.pdf?did=158311&prodName=TK4R9E15Q5
TK4R9E15Q5,S1X
Виробник: Toshiba Semiconductor and Storage
Description: 150V UMOS10-HSD TO-220 4.9MOHM
Packaging: Tube
Package / Case: TO-220-3
Mounting Type: Through Hole
Operating Temperature: 175°C
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 120A (Tc)
Rds On (Max) @ Id, Vgs: 4.9mOhm @ 50A, 10V
Power Dissipation (Max): 300W (Tc)
Vgs(th) (Max) @ Id: 4.5V @ 2.2mA
Supplier Device Package: TO-220
Drive Voltage (Max Rds On, Min Rds On): 8V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 150 V
Gate Charge (Qg) (Max) @ Vgs: 96 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 7820 pF @ 75 V
на замовлення 132 шт:
термін постачання 21-31 дні (днів)
Кількість Ціна
2+287.50 грн
50+219.00 грн
100+214.50 грн
Мінімальне замовлення: 2
В кошику  од. на суму  грн.
TK115N65Z5,S1F TK115N65Z5_datasheet_en_20240215.pdf?did=157728&prodName=TK115N65Z5
TK115N65Z5,S1F
Виробник: Toshiba Semiconductor and Storage
Description: N-CH MOSFET, 650 V, 0.115 @10V,
Packaging: Tube
Package / Case: TO-247-3
Mounting Type: Through Hole
Operating Temperature: 150°C
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 24A (Ta)
Rds On (Max) @ Id, Vgs: 115mOhm @ 12A, 10V
Power Dissipation (Max): 190W (Tc)
Vgs(th) (Max) @ Id: 4.5V @ 1.02mA
Supplier Device Package: TO-247
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±30V
Drain to Source Voltage (Vdss): 650 V
Gate Charge (Qg) (Max) @ Vgs: 42 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 2280 pF @ 300 V
на замовлення 60 шт:
термін постачання 21-31 дні (днів)
Кількість Ціна
1+494.97 грн
30+273.81 грн
В кошику  од. на суму  грн.
TMPM366FYXBG TMPM366FxXBG_7-17-13.pdf
Виробник: Toshiba Semiconductor and Storage
Description: IC MCU 32BIT 256KB FLSH 109TFBGA
Packaging: Tray
Package / Case: 109-TFBGA
Mounting Type: Surface Mount
Speed: 48MHz
Program Memory Size: 256KB (256K x 8)
RAM Size: 48K x 8
Operating Temperature: -40°C ~ 85°C (TA)
Oscillator Type: Internal
Program Memory Type: FLASH
Core Processor: ARM® Cortex®-M3
Data Converters: A/D 12x12b
Core Size: 32-Bit
Voltage - Supply (Vcc/Vdd): 2.7V ~ 3.6V
Connectivity: I2C, SIO, SPI, UART/USART
Peripherals: DMA, LVD, WDT
Supplier Device Package: 109-TFBGA (9x9)
Number of I/O: 73
DigiKey Programmable: Not Verified
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TMPM366FDXBG TMPM366FxXBG_7-17-13.pdf
Виробник: Toshiba Semiconductor and Storage
Description: IC MCU 32BIT 512KB FLSH 109TFBGA
Packaging: Tray
Package / Case: 109-TFBGA
Mounting Type: Surface Mount
Speed: 48MHz
Program Memory Size: 512KB (512K x 8)
RAM Size: 64K x 8
Operating Temperature: -40°C ~ 85°C (TA)
Oscillator Type: Internal
Program Memory Type: FLASH
Core Processor: ARM® Cortex®-M3
Data Converters: A/D 12x12b
Core Size: 32-Bit
Voltage - Supply (Vcc/Vdd): 2.7V ~ 3.6V
Connectivity: I2C, SIO, UART/USART
Peripherals: DMA, PWM, WDT
Supplier Device Package: 109-TFBGA (9x9)
Number of I/O: 74
DigiKey Programmable: Not Verified
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TMPM37AFSQG,EL
Виробник: Toshiba Semiconductor and Storage
Description: IC MCU 32BIT 64KB FLASH 32VQFN
Packaging: Tape & Reel (TR)
Package / Case: 32-VFQFN Exposed Pad
Mounting Type: Surface Mount
Speed: 40MHz
Program Memory Size: 64KB (64K x 8)
RAM Size: 4K x 8
Operating Temperature: -40°C ~ 85°C
Oscillator Type: External, Internal
Program Memory Type: FLASH
Core Processor: ARM® Cortex®-M3
Data Converters: A/D 5x12b SAR
Core Size: 32-Bit
Voltage - Supply (Vcc/Vdd): 4.5V ~ 5.5V
Connectivity: I2C, SIO, UART/USART
Peripherals: POR, PWM, Voltage Detect, WDT
Supplier Device Package: 32-VQFN (5x5)
Number of I/O: 13
DigiKey Programmable: Not Verified
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RN2418,LF docget.jsp?did=18883&prodName=RN2418
RN2418,LF
Виробник: Toshiba Semiconductor and Storage
Description: TRANS PREBIAS PNP 50V 0.1A SMINI
Packaging: Tape & Reel (TR)
Package / Case: TO-236-3, SC-59, SOT-23-3
Mounting Type: Surface Mount
Transistor Type: PNP - Pre-Biased
Vce Saturation (Max) @ Ib, Ic: 300mV @ 250µA, 5mA
Current - Collector Cutoff (Max): 500nA
DC Current Gain (hFE) (Min) @ Ic, Vce: 50 @ 10mA, 5V
Supplier Device Package: S-Mini
Current - Collector (Ic) (Max): 100 mA
Voltage - Collector Emitter Breakdown (Max): 50 V
Power - Max: 200 mW
Frequency - Transition: 200 MHz
Resistor - Base (R1): 47 kOhms
Resistor - Emitter Base (R2): 10 kOhms
Resistors Included: R1 and R2
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RN2418,LF docget.jsp?did=18883&prodName=RN2418
RN2418,LF
Виробник: Toshiba Semiconductor and Storage
Description: TRANS PREBIAS PNP 50V 0.1A SMINI
Packaging: Cut Tape (CT)
Package / Case: TO-236-3, SC-59, SOT-23-3
Mounting Type: Surface Mount
Transistor Type: PNP - Pre-Biased
Vce Saturation (Max) @ Ib, Ic: 300mV @ 250µA, 5mA
Current - Collector Cutoff (Max): 500nA
DC Current Gain (hFE) (Min) @ Ic, Vce: 50 @ 10mA, 5V
Supplier Device Package: S-Mini
Current - Collector (Ic) (Max): 100 mA
Voltage - Collector Emitter Breakdown (Max): 50 V
Power - Max: 200 mW
Frequency - Transition: 200 MHz
Resistor - Base (R1): 47 kOhms
Resistor - Emitter Base (R2): 10 kOhms
Resistors Included: R1 and R2
на замовлення 2947 шт:
термін постачання 21-31 дні (днів)
Кількість Ціна
29+10.88 грн
50+6.06 грн
100+3.76 грн
500+2.55 грн
1000+2.24 грн
Мінімальне замовлення: 29
В кошику  од. на суму  грн.
RN1418,LF docget.jsp?did=18796&prodName=RN1418
RN1418,LF
Виробник: Toshiba Semiconductor and Storage
Description: TRANS PREBIAS NPN 50V 0.1A SMINI
Packaging: Tape & Reel (TR)
Package / Case: TO-236-3, SC-59, SOT-23-3
Mounting Type: Surface Mount
Transistor Type: NPN - Pre-Biased
Vce Saturation (Max) @ Ib, Ic: 300mV @ 250µA, 5mA
Current - Collector Cutoff (Max): 500nA
DC Current Gain (hFE) (Min) @ Ic, Vce: 50 @ 10mA, 5V
Supplier Device Package: S-Mini
Current - Collector (Ic) (Max): 100 mA
Voltage - Collector Emitter Breakdown (Max): 50 V
Power - Max: 200 mW
Frequency - Transition: 250 MHz
Resistor - Base (R1): 47 kOhms
Resistor - Emitter Base (R2): 10 kOhms
Resistors Included: R1 and R2
товару немає в наявності
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RN1418,LF docget.jsp?did=18796&prodName=RN1418
RN1418,LF
Виробник: Toshiba Semiconductor and Storage
Description: TRANS PREBIAS NPN 50V 0.1A SMINI
Packaging: Cut Tape (CT)
Package / Case: TO-236-3, SC-59, SOT-23-3
Mounting Type: Surface Mount
Transistor Type: NPN - Pre-Biased
Vce Saturation (Max) @ Ib, Ic: 300mV @ 250µA, 5mA
Current - Collector Cutoff (Max): 500nA
DC Current Gain (hFE) (Min) @ Ic, Vce: 50 @ 10mA, 5V
Supplier Device Package: S-Mini
Current - Collector (Ic) (Max): 100 mA
Voltage - Collector Emitter Breakdown (Max): 50 V
Power - Max: 200 mW
Frequency - Transition: 250 MHz
Resistor - Base (R1): 47 kOhms
Resistor - Emitter Base (R2): 10 kOhms
Resistors Included: R1 and R2
на замовлення 171 шт:
термін постачання 21-31 дні (днів)
Кількість Ціна
29+10.88 грн
50+6.06 грн
100+3.76 грн
Мінімальне замовлення: 29
В кошику  од. на суму  грн.
74HC00D docget.jsp?did=36764&prodName=74HC00D
74HC00D
Виробник: Toshiba Semiconductor and Storage
Description: IC GATE NAND 4CH 2-INP 14SOIC
Packaging: Tape & Reel (TR)
Package / Case: 14-SOIC (0.154", 3.90mm Width)
Mounting Type: Surface Mount
Logic Type: NAND Gate
Operating Temperature: -40°C ~ 125°C
Voltage - Supply: 2V ~ 6V
Current - Output High, Low: 5.2mA, 5.2mA
Number of Inputs: 2
Supplier Device Package: 14-SOIC
Input Logic Level - High: 1.5V ~ 4.2V
Input Logic Level - Low: 0.5V ~ 1.8V
Max Propagation Delay @ V, Max CL: 13ns @ 6V, 50pF
Number of Circuits: 4
Current - Quiescent (Max): 1 µA
на замовлення 2500 шт:
термін постачання 21-31 дні (днів)
Кількість Ціна
2500+9.71 грн
Мінімальне замовлення: 2500
В кошику  од. на суму  грн.
74HC00D docget.jsp?did=36764&prodName=74HC00D
74HC00D
Виробник: Toshiba Semiconductor and Storage
Description: IC GATE NAND 4CH 2-INP 14SOIC
Packaging: Cut Tape (CT)
Package / Case: 14-SOIC (0.154", 3.90mm Width)
Mounting Type: Surface Mount
Logic Type: NAND Gate
Operating Temperature: -40°C ~ 125°C
Voltage - Supply: 2V ~ 6V
Current - Output High, Low: 5.2mA, 5.2mA
Number of Inputs: 2
Supplier Device Package: 14-SOIC
Input Logic Level - High: 1.5V ~ 4.2V
Input Logic Level - Low: 0.5V ~ 1.8V
Max Propagation Delay @ V, Max CL: 13ns @ 6V, 50pF
Number of Circuits: 4
Current - Quiescent (Max): 1 µA
на замовлення 4343 шт:
термін постачання 21-31 дні (днів)
Кількість Ціна
14+23.31 грн
20+15.26 грн
25+13.56 грн
100+10.96 грн
250+10.13 грн
500+9.62 грн
1000+9.06 грн
Мінімальне замовлення: 14
В кошику  од. на суму  грн.
CMH07,LQ CMH07_datasheet_en_20181115.pdf?did=20248&prodName=CMH07
CMH07,LQ
Виробник: Toshiba Semiconductor and Storage
Description: 200 V/2 A RECTIFIER DIODE, M-FLA
Packaging: Tape & Reel (TR)
Package / Case: SOD-128
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 100 ns
Technology: Standard
Current - Average Rectified (Io): 2A
Supplier Device Package: M-FLAT (2.4x3.8)
Operating Temperature - Junction: -40°C ~ 150°C
Voltage - DC Reverse (Vr) (Max): 200 V
Voltage - Forward (Vf) (Max) @ If: 980 mV @ 2 A
Current - Reverse Leakage @ Vr: 10 µA @ 200 V
на замовлення 6000 шт:
термін постачання 21-31 дні (днів)
Кількість Ціна
3000+12.66 грн
6000+11.19 грн
Мінімальне замовлення: 3000
В кошику  од. на суму  грн.
CMH07,LQ CMH07_datasheet_en_20181115.pdf?did=20248&prodName=CMH07
CMH07,LQ
Виробник: Toshiba Semiconductor and Storage
Description: 200 V/2 A RECTIFIER DIODE, M-FLA
Packaging: Cut Tape (CT)
Package / Case: SOD-128
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 100 ns
Technology: Standard
Current - Average Rectified (Io): 2A
Supplier Device Package: M-FLAT (2.4x3.8)
Operating Temperature - Junction: -40°C ~ 150°C
Voltage - DC Reverse (Vr) (Max): 200 V
Voltage - Forward (Vf) (Max) @ If: 980 mV @ 2 A
Current - Reverse Leakage @ Vr: 10 µA @ 200 V
на замовлення 6000 шт:
термін постачання 21-31 дні (днів)
Кількість Ціна
6+54.39 грн
10+32.85 грн
100+21.23 грн
500+15.23 грн
1000+13.72 грн
Мінімальне замовлення: 6
В кошику  од. на суму  грн.
TC74HC123AF TC74HC123AF_datasheet_en_20161202.pdf?did=8561&prodName=TC74HC123AF
TC74HC123AF
Виробник: Toshiba Semiconductor and Storage
Description: SOP16 DUAL MONOSTABLE MULTIVIBRA
Packaging: Tape & Reel (TR)
Package / Case: 16-SOIC (0.209", 5.30mm Width)
Mounting Type: Surface Mount
Logic Type: Monostable
Operating Temperature: -40°C ~ 85°C
Propagation Delay: 23 ns
Independent Circuits: 2
Current - Output High, Low: 5.2mA, 5.2mA
Schmitt Trigger Input: Yes
Supplier Device Package: 16-SOP
Voltage - Supply: 2 V ~ 6 V
товару немає в наявності
В кошику  од. на суму  грн.
TCR3LM50A,RF TCR3LM50A_datasheet_en_20241028.pdf?did=151501&prodName=TCR3LM50A
TCR3LM50A,RF
Виробник: Toshiba Semiconductor and Storage
Description: OUTPUT LDO REGULATOR 300 MA FIXE
Packaging: Tape & Reel (TR)
Package / Case: 4-XDFN Exposed Pad
Output Type: Fixed
Mounting Type: Surface Mount
Current - Output: 300mA
Operating Temperature: -40°C ~ 85°C
Output Configuration: Positive
Current - Quiescent (Iq): 2.2 µA
Voltage - Input (Max): 5.5V
Number of Regulators: 1
Supplier Device Package: 4-DFN (1x1)
Voltage - Output (Min/Fixed): 5V
Control Features: Enable
PSRR: 74dB ~ 43dB (100Hz ~ 100kHz)
Voltage Dropout (Max): 0.205V @ 200mA
Protection Features: Over Current, Over Temperature
на замовлення 10000 шт:
термін постачання 21-31 дні (днів)
Кількість Ціна
5000+6.07 грн
10000+5.68 грн
Мінімальне замовлення: 5000
В кошику  од. на суму  грн.
TCR3LM50A,RF TCR3LM50A_datasheet_en_20241028.pdf?did=151501&prodName=TCR3LM50A
TCR3LM50A,RF
Виробник: Toshiba Semiconductor and Storage
Description: OUTPUT LDO REGULATOR 300 MA FIXE
Packaging: Cut Tape (CT)
Package / Case: 4-XDFN Exposed Pad
Output Type: Fixed
Mounting Type: Surface Mount
Current - Output: 300mA
Operating Temperature: -40°C ~ 85°C
Output Configuration: Positive
Current - Quiescent (Iq): 2.2 µA
Voltage - Input (Max): 5.5V
Number of Regulators: 1
Supplier Device Package: 4-DFN (1x1)
Voltage - Output (Min/Fixed): 5V
Control Features: Enable
PSRR: 74dB ~ 43dB (100Hz ~ 100kHz)
Voltage Dropout (Max): 0.205V @ 200mA
Protection Features: Over Current, Over Temperature
на замовлення 10000 шт:
термін постачання 21-31 дні (днів)
Кількість Ціна
22+14.76 грн
30+10.10 грн
34+8.98 грн
100+7.19 грн
250+6.61 грн
500+6.26 грн
1000+5.87 грн
2500+5.57 грн
Мінімальне замовлення: 22
В кошику  од. на суму  грн.
7UL3G34FK,LF docget.jsp?did=147413&prodName=7UL3G34FK
7UL3G34FK,LF
Виробник: Toshiba Semiconductor and Storage
Description: IC BUFFER NON-INVERTING 3.6V US8
Packaging: Tape & Reel (TR)
Package / Case: 8-VFSOP (0.091", 2.30mm Width)
Mounting Type: Surface Mount
Number of Elements: 3
Logic Type: Buffer, Non-Inverting
Operating Temperature: -40°C ~ 125°C (TA)
Voltage - Supply: 0.9V ~ 3.6V
Number of Bits per Element: 1
Current - Output High, Low: 8mA, 8mA
Supplier Device Package: US8
на замовлення 3000 шт:
термін постачання 21-31 дні (днів)
Кількість Ціна
3000+5.76 грн
Мінімальне замовлення: 3000
В кошику  од. на суму  грн.
7UL3G34FK,LF docget.jsp?did=147413&prodName=7UL3G34FK
7UL3G34FK,LF
Виробник: Toshiba Semiconductor and Storage
Description: IC BUFFER NON-INVERTING 3.6V US8
Packaging: Cut Tape (CT)
Package / Case: 8-VFSOP (0.091", 2.30mm Width)
Mounting Type: Surface Mount
Number of Elements: 3
Logic Type: Buffer, Non-Inverting
Operating Temperature: -40°C ~ 125°C (TA)
Voltage - Supply: 0.9V ~ 3.6V
Number of Bits per Element: 1
Current - Output High, Low: 8mA, 8mA
Supplier Device Package: US8
на замовлення 3856 шт:
термін постачання 21-31 дні (днів)
Кількість Ціна
20+15.54 грн
31+9.80 грн
35+8.65 грн
100+6.94 грн
250+6.38 грн
500+6.04 грн
1000+5.66 грн
Мінімальне замовлення: 20
В кошику  од. на суму  грн.
2SC4738-Y,LXHF docget.jsp?did=19314&prodName=2SC4738
2SC4738-Y,LXHF
Виробник: Toshiba Semiconductor and Storage
Description: NPN BIPOLAR TRANSISTOR 50V 0.15A
Packaging: Tape & Reel (TR)
Package / Case: SC-75, SOT-416
Mounting Type: Surface Mount
Transistor Type: NPN
Vce Saturation (Max) @ Ib, Ic: 250mV @ 10mA, 100mA
Current - Collector Cutoff (Max): 100nA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce: 120 @ 2mA, 6V
Frequency - Transition: 80MHz
Supplier Device Package: SSM
Grade: Automotive
Current - Collector (Ic) (Max): 150 mA
Voltage - Collector Emitter Breakdown (Max): 50 V
Power - Max: 120 mW
Qualification: AEC-Q101
на замовлення 6000 шт:
термін постачання 21-31 дні (днів)
Кількість Ціна
3000+2.73 грн
6000+2.54 грн
Мінімальне замовлення: 3000
В кошику  од. на суму  грн.
2SC4738-Y,LXHF docget.jsp?did=19314&prodName=2SC4738
2SC4738-Y,LXHF
Виробник: Toshiba Semiconductor and Storage
Description: NPN BIPOLAR TRANSISTOR 50V 0.15A
Packaging: Cut Tape (CT)
Package / Case: SC-75, SOT-416
Mounting Type: Surface Mount
Transistor Type: NPN
Vce Saturation (Max) @ Ib, Ic: 250mV @ 10mA, 100mA
Current - Collector Cutoff (Max): 100nA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce: 120 @ 2mA, 6V
Frequency - Transition: 80MHz
Supplier Device Package: SSM
Grade: Automotive
Current - Collector (Ic) (Max): 150 mA
Voltage - Collector Emitter Breakdown (Max): 50 V
Power - Max: 120 mW
Qualification: AEC-Q101
на замовлення 6000 шт:
термін постачання 21-31 дні (днів)
Кількість Ціна
45+6.99 грн
64+4.71 грн
73+4.13 грн
100+3.27 грн
250+2.97 грн
500+2.80 грн
1000+2.61 грн
Мінімальне замовлення: 45
В кошику  од. на суму  грн.
RN1114MFV,L3F docget.jsp?did=721&prodName=RN1114MFV
RN1114MFV,L3F
Виробник: Toshiba Semiconductor and Storage
Description: TRANS PREBIAS NPN 50V 0.1A VESM
Packaging: Tape & Reel (TR)
Package / Case: SOT-723
Mounting Type: Surface Mount
Transistor Type: NPN - Pre-Biased
Vce Saturation (Max) @ Ib, Ic: 300mV @ 250µA, 5mA
Current - Collector Cutoff (Max): 500nA
DC Current Gain (hFE) (Min) @ Ic, Vce: 50 @ 10mA, 5V
Supplier Device Package: VESM
Current - Collector (Ic) (Max): 100 mA
Voltage - Collector Emitter Breakdown (Max): 50 V
Power - Max: 150 mW
Frequency - Transition: 250 MHz
Resistor - Base (R1): 1 kOhms
Resistor - Emitter Base (R2): 10 kOhms
Resistors Included: R1 and R2
товару немає в наявності
В кошику  од. на суму  грн.
RN1114MFV,L3F docget.jsp?did=721&prodName=RN1114MFV
RN1114MFV,L3F
Виробник: Toshiba Semiconductor and Storage
Description: TRANS PREBIAS NPN 50V 0.1A VESM
Packaging: Cut Tape (CT)
Package / Case: SOT-723
Mounting Type: Surface Mount
Transistor Type: NPN - Pre-Biased
Vce Saturation (Max) @ Ib, Ic: 300mV @ 250µA, 5mA
Current - Collector Cutoff (Max): 500nA
DC Current Gain (hFE) (Min) @ Ic, Vce: 50 @ 10mA, 5V
Supplier Device Package: VESM
Current - Collector (Ic) (Max): 100 mA
Voltage - Collector Emitter Breakdown (Max): 50 V
Power - Max: 150 mW
Frequency - Transition: 250 MHz
Resistor - Base (R1): 1 kOhms
Resistor - Emitter Base (R2): 10 kOhms
Resistors Included: R1 and R2
на замовлення 6394 шт:
термін постачання 21-31 дні (днів)
Кількість Ціна
27+11.66 грн
42+7.18 грн
100+4.44 грн
500+3.03 грн
1000+2.67 грн
2000+2.36 грн
Мінімальне замовлення: 27
В кошику  од. на суму  грн.
RN2114MFV,L3F docget.jsp?did=742&prodName=RN2114MFV
RN2114MFV,L3F
Виробник: Toshiba Semiconductor and Storage
Description: TRANS PREBIAS PNP 50V 0.1A VESM
Packaging: Tape & Reel (TR)
Package / Case: SOT-723
Mounting Type: Surface Mount
Transistor Type: PNP - Pre-Biased
Vce Saturation (Max) @ Ib, Ic: 300mV @ 500µA, 5mA
Current - Collector Cutoff (Max): 500nA
DC Current Gain (hFE) (Min) @ Ic, Vce: 50 @ 10mA, 5V
Supplier Device Package: VESM
Current - Collector (Ic) (Max): 100 mA
Voltage - Collector Emitter Breakdown (Max): 50 V
Power - Max: 150 mW
Resistor - Base (R1): 1 kOhms
Resistor - Emitter Base (R2): 10 kOhms
Resistors Included: R1 and R2
товару немає в наявності
В кошику  од. на суму  грн.
RN2114MFV,L3F docget.jsp?did=742&prodName=RN2114MFV
RN2114MFV,L3F
Виробник: Toshiba Semiconductor and Storage
Description: TRANS PREBIAS PNP 50V 0.1A VESM
Packaging: Cut Tape (CT)
Package / Case: SOT-723
Mounting Type: Surface Mount
Transistor Type: PNP - Pre-Biased
Vce Saturation (Max) @ Ib, Ic: 300mV @ 500µA, 5mA
Current - Collector Cutoff (Max): 500nA
DC Current Gain (hFE) (Min) @ Ic, Vce: 50 @ 10mA, 5V
Supplier Device Package: VESM
Current - Collector (Ic) (Max): 100 mA
Voltage - Collector Emitter Breakdown (Max): 50 V
Power - Max: 150 mW
Resistor - Base (R1): 1 kOhms
Resistor - Emitter Base (R2): 10 kOhms
Resistors Included: R1 and R2
на замовлення 7856 шт:
термін постачання 21-31 дні (днів)
Кількість Ціна
27+11.66 грн
42+7.18 грн
100+4.44 грн
500+3.03 грн
1000+2.67 грн
2000+2.36 грн
Мінімальне замовлення: 27
В кошику  од. на суму  грн.
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