Продукція > TOSHIBA SEMICONDUCTOR AND STORAGE > Всі товари виробника TOSHIBA SEMICONDUCTOR AND STORAGE (13529) > Сторінка 223 з 226
| Фото | Назва | Виробник | Інформація | Доступність | Ціна без ПДВ | ||||||||||||||||||
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CMH07,LQ | Toshiba Semiconductor and Storage |
Description: 200 V/2 A RECTIFIER DIODE, M-FLAPackaging: Cut Tape (CT) Package / Case: SOD-128 Mounting Type: Surface Mount Speed: Fast Recovery =< 500ns, > 200mA (Io) Reverse Recovery Time (trr): 100 ns Technology: Standard Current - Average Rectified (Io): 2A Supplier Device Package: M-FLAT (2.4x3.8) Operating Temperature - Junction: -40°C ~ 150°C Voltage - DC Reverse (Vr) (Max): 200 V Voltage - Forward (Vf) (Max) @ If: 980 mV @ 2 A Current - Reverse Leakage @ Vr: 10 µA @ 200 V |
на замовлення 6000 шт: термін постачання 21-31 дні (днів) |
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TC74HC123AF | Toshiba Semiconductor and Storage |
Description: SOP16 DUAL MONOSTABLE MULTIVIBRAPackaging: Tape & Reel (TR) Package / Case: 16-SOIC (0.209", 5.30mm Width) Mounting Type: Surface Mount Logic Type: Monostable Operating Temperature: -40°C ~ 85°C Propagation Delay: 23 ns Independent Circuits: 2 Current - Output High, Low: 5.2mA, 5.2mA Schmitt Trigger Input: Yes Supplier Device Package: 16-SOP Voltage - Supply: 2 V ~ 6 V |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||||||||||||
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TCR3LM50A,RF | Toshiba Semiconductor and Storage |
Description: OUTPUT LDO REGULATOR 300 MA FIXEPackaging: Tape & Reel (TR) Package / Case: 4-XDFN Exposed Pad Output Type: Fixed Mounting Type: Surface Mount Current - Output: 300mA Operating Temperature: -40°C ~ 85°C Output Configuration: Positive Current - Quiescent (Iq): 2.2 µA Voltage - Input (Max): 5.5V Number of Regulators: 1 Supplier Device Package: 4-DFN (1x1) Voltage - Output (Min/Fixed): 5V Control Features: Enable PSRR: 74dB ~ 43dB (100Hz ~ 100kHz) Voltage Dropout (Max): 0.205V @ 200mA Protection Features: Over Current, Over Temperature |
на замовлення 10000 шт: термін постачання 21-31 дні (днів) |
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TCR3LM50A,RF | Toshiba Semiconductor and Storage |
Description: OUTPUT LDO REGULATOR 300 MA FIXEPackaging: Cut Tape (CT) Package / Case: 4-XDFN Exposed Pad Output Type: Fixed Mounting Type: Surface Mount Current - Output: 300mA Operating Temperature: -40°C ~ 85°C Output Configuration: Positive Current - Quiescent (Iq): 2.2 µA Voltage - Input (Max): 5.5V Number of Regulators: 1 Supplier Device Package: 4-DFN (1x1) Voltage - Output (Min/Fixed): 5V Control Features: Enable PSRR: 74dB ~ 43dB (100Hz ~ 100kHz) Voltage Dropout (Max): 0.205V @ 200mA Protection Features: Over Current, Over Temperature |
на замовлення 10000 шт: термін постачання 21-31 дні (днів) |
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7UL3G34FK,LF | Toshiba Semiconductor and Storage |
Description: IC BUFFER NON-INVERTING 3.6V US8Supplier Device Package: US8 Current - Output High, Low: 8mA, 8mA Number of Bits per Element: 1 Voltage - Supply: 0.9V ~ 3.6V Operating Temperature: -40°C ~ 125°C (TA) Logic Type: Buffer, Non-Inverting Number of Elements: 3 Mounting Type: Surface Mount Package / Case: 8-VFSOP (0.091", 2.30mm Width) Packaging: Tape & Reel (TR) |
на замовлення 3000 шт: термін постачання 21-31 дні (днів) |
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7UL3G34FK,LF | Toshiba Semiconductor and Storage |
Description: IC BUFFER NON-INVERTING 3.6V US8Supplier Device Package: US8 Current - Output High, Low: 8mA, 8mA Number of Bits per Element: 1 Voltage - Supply: 0.9V ~ 3.6V Operating Temperature: -40°C ~ 125°C (TA) Logic Type: Buffer, Non-Inverting Number of Elements: 3 Mounting Type: Surface Mount Package / Case: 8-VFSOP (0.091", 2.30mm Width) Packaging: Cut Tape (CT) |
на замовлення 3856 шт: термін постачання 21-31 дні (днів) |
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2SC4738-Y,LXHF | Toshiba Semiconductor and Storage |
Description: NPN BIPOLAR TRANSISTOR 50V 0.15ATransistor Type: NPN Mounting Type: Surface Mount Package / Case: SC-75, SOT-416 Packaging: Tape & Reel (TR) Qualification: AEC-Q101 Power - Max: 120 mW Voltage - Collector Emitter Breakdown (Max): 50 V Current - Collector (Ic) (Max): 150 mA Grade: Automotive Supplier Device Package: SSM Frequency - Transition: 80MHz DC Current Gain (hFE) (Min) @ Ic, Vce: 120 @ 2mA, 6V Current - Collector Cutoff (Max): 100nA (ICBO) Vce Saturation (Max) @ Ib, Ic: 250mV @ 10mA, 100mA |
на замовлення 6000 шт: термін постачання 21-31 дні (днів) |
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2SC4738-Y,LXHF | Toshiba Semiconductor and Storage |
Description: NPN BIPOLAR TRANSISTOR 50V 0.15AQualification: AEC-Q101 Power - Max: 120 mW Voltage - Collector Emitter Breakdown (Max): 50 V Current - Collector (Ic) (Max): 150 mA Grade: Automotive Supplier Device Package: SSM Frequency - Transition: 80MHz DC Current Gain (hFE) (Min) @ Ic, Vce: 120 @ 2mA, 6V Current - Collector Cutoff (Max): 100nA (ICBO) Vce Saturation (Max) @ Ib, Ic: 250mV @ 10mA, 100mA Transistor Type: NPN Mounting Type: Surface Mount Package / Case: SC-75, SOT-416 Packaging: Cut Tape (CT) |
на замовлення 6000 шт: термін постачання 21-31 дні (днів) |
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RN1114MFV,L3F | Toshiba Semiconductor and Storage |
Description: TRANS PREBIAS NPN 50V 0.1A VESMResistors Included: R1 and R2 Resistor - Emitter Base (R2): 10 kOhms Resistor - Base (R1): 1 kOhms Frequency - Transition: 250 MHz Power - Max: 150 mW Voltage - Collector Emitter Breakdown (Max): 50 V Current - Collector (Ic) (Max): 100 mA Supplier Device Package: VESM DC Current Gain (hFE) (Min) @ Ic, Vce: 50 @ 10mA, 5V Current - Collector Cutoff (Max): 500nA Vce Saturation (Max) @ Ib, Ic: 300mV @ 250µA, 5mA Transistor Type: NPN - Pre-Biased Mounting Type: Surface Mount Package / Case: SOT-723 Packaging: Tape & Reel (TR) |
товару немає в наявності |
Мінімальне замовлення: 8000 шт В кошику од. на суму грн. | ||||||||||||||||||
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RN1114MFV,L3F | Toshiba Semiconductor and Storage |
Description: TRANS PREBIAS NPN 50V 0.1A VESMPower - Max: 150 mW Voltage - Collector Emitter Breakdown (Max): 50 V Current - Collector (Ic) (Max): 100 mA Supplier Device Package: VESM DC Current Gain (hFE) (Min) @ Ic, Vce: 50 @ 10mA, 5V Current - Collector Cutoff (Max): 500nA Vce Saturation (Max) @ Ib, Ic: 300mV @ 250µA, 5mA Transistor Type: NPN - Pre-Biased Mounting Type: Surface Mount Package / Case: SOT-723 Packaging: Cut Tape (CT) Resistors Included: R1 and R2 Resistor - Emitter Base (R2): 10 kOhms Resistor - Base (R1): 1 kOhms Frequency - Transition: 250 MHz |
на замовлення 6394 шт: термін постачання 21-31 дні (днів) |
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RN2114MFV,L3F | Toshiba Semiconductor and Storage |
Description: TRANS PREBIAS PNP 50V 0.1A VESMResistors Included: R1 and R2 Resistor - Emitter Base (R2): 10 kOhms Resistor - Base (R1): 1 kOhms Power - Max: 150 mW Voltage - Collector Emitter Breakdown (Max): 50 V Current - Collector (Ic) (Max): 100 mA Supplier Device Package: VESM DC Current Gain (hFE) (Min) @ Ic, Vce: 50 @ 10mA, 5V Current - Collector Cutoff (Max): 500nA Vce Saturation (Max) @ Ib, Ic: 300mV @ 500µA, 5mA Transistor Type: PNP - Pre-Biased Mounting Type: Surface Mount Package / Case: SOT-723 Packaging: Tape & Reel (TR) |
товару немає в наявності |
Мінімальне замовлення: 8000 шт В кошику од. на суму грн. | ||||||||||||||||||
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RN2114MFV,L3F | Toshiba Semiconductor and Storage |
Description: TRANS PREBIAS PNP 50V 0.1A VESMResistors Included: R1 and R2 Resistor - Emitter Base (R2): 10 kOhms Resistor - Base (R1): 1 kOhms Power - Max: 150 mW Voltage - Collector Emitter Breakdown (Max): 50 V Current - Collector (Ic) (Max): 100 mA Supplier Device Package: VESM DC Current Gain (hFE) (Min) @ Ic, Vce: 50 @ 10mA, 5V Current - Collector Cutoff (Max): 500nA Vce Saturation (Max) @ Ib, Ic: 300mV @ 500µA, 5mA Transistor Type: PNP - Pre-Biased Mounting Type: Surface Mount Package / Case: SOT-723 Packaging: Cut Tape (CT) |
на замовлення 7856 шт: термін постачання 21-31 дні (днів) |
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| MN06ACA10T | Toshiba Semiconductor and Storage |
Description: HDD 10TB 3.5" SATA III 5V/12VPackaging: Bulk Size / Dimension: 147.00mm x 101.85mm x 26.10mm Memory Size: 10TB Memory Type: Magnetic Disk (HDD) Type: SATA III Operating Temperature: 0°C ~ 60°C Voltage - Supply: 5V, 12V Form Factor: 3.5" |
товару немає в наявності |
Мінімальне замовлення: 20 шт В кошику од. на суму грн. | |||||||||||||||||||
| MN06ACA600 | Toshiba Semiconductor and Storage |
Description: HDD 6TB 3.5" SATA III 5V/12VPackaging: Bulk Size / Dimension: 147.00mm x 101.85mm x 26.10mm Memory Size: 6TB Memory Type: Magnetic Disk (HDD) Type: SATA III Operating Temperature: 0°C ~ 60°C Voltage - Supply: 5V, 12V Form Factor: 3.5" |
товару немає в наявності |
В кошику од. на суму грн. | |||||||||||||||||||
| MN06ACA800 | Toshiba Semiconductor and Storage |
Description: HDD 8TB 3.5" SATA III 5V/12VPackaging: Bulk Size / Dimension: 147.00mm x 101.85mm x 26.10mm Memory Size: 8TB Memory Type: Magnetic Disk (HDD) Type: SATA III Operating Temperature: 0°C ~ 60°C Voltage - Supply: 5V, 12V Form Factor: 3.5" |
товару немає в наявності |
В кошику од. на суму грн. | |||||||||||||||||||
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TLP387(TPR,E | Toshiba Semiconductor and Storage |
Description: OPTOISOLATOR 5KV 1CH DARL 6-SOCurrent - DC Forward (If) (Max): 50 mA Number of Channels: 1 Output Type: Darlington Package / Case: 6-SOIC (0.295", 7.50mm Width), 4 Leads Packaging: Tape & Reel (TR) Rise / Fall Time (Typ): 40µs, 15µs Turn On / Turn Off Time (Typ): 50µs, 15µs Voltage - Output (Max): 300V Supplier Device Package: 6-SO, 4 Lead Vce Saturation (Max): 1V Current Transfer Ratio (Min): 1000% @ 1mA Voltage - Isolation: 5000Vrms Current - Output / Channel: 150mA Input Type: DC Voltage - Forward (Vf) (Typ): 1.25V Operating Temperature: -55°C ~ 110°C Mounting Type: Surface Mount |
на замовлення 6000 шт: термін постачання 21-31 дні (днів) |
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TLP387(TPR,E | Toshiba Semiconductor and Storage |
Description: OPTOISOLATOR 5KV 1CH DARL 6-SOVce Saturation (Max): 1V Current Transfer Ratio (Min): 1000% @ 1mA Voltage - Isolation: 5000Vrms Current - Output / Channel: 150mA Input Type: DC Voltage - Forward (Vf) (Typ): 1.25V Operating Temperature: -55°C ~ 110°C Mounting Type: Surface Mount Output Type: Darlington Package / Case: 6-SOIC (0.295", 7.50mm Width), 4 Leads Packaging: Cut Tape (CT) Current - DC Forward (If) (Max): 50 mA Number of Channels: 1 Rise / Fall Time (Typ): 40µs, 15µs Turn On / Turn Off Time (Typ): 50µs, 15µs Voltage - Output (Max): 300V Supplier Device Package: 6-SO, 4 Lead |
на замовлення 8436 шт: термін постачання 21-31 дні (днів) |
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TLP387(D4-TPR,E | Toshiba Semiconductor and Storage |
Description: OPTOISOLATOR 5KV 1CH DARL 6-SOCurrent - DC Forward (If) (Max): 50 mA Number of Channels: 1 Rise / Fall Time (Typ): 40µs, 15µs Turn On / Turn Off Time (Typ): 50µs, 15µs Voltage - Output (Max): 300V Supplier Device Package: 6-SO, 4 Lead Vce Saturation (Max): 1V Current Transfer Ratio (Min): 1000% @ 1mA Voltage - Isolation: 5000Vrms Current - Output / Channel: 150mA Input Type: DC Voltage - Forward (Vf) (Typ): 1.25V Operating Temperature: -55°C ~ 110°C Mounting Type: Surface Mount Output Type: Darlington Package / Case: 6-SOIC (0.295", 7.50mm Width), 4 Leads Packaging: Tape & Reel (TR) |
на замовлення 3000 шт: термін постачання 21-31 дні (днів) |
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TLP387(D4-TPR,E | Toshiba Semiconductor and Storage |
Description: OPTOISOLATOR 5KV 1CH DARL 6-SOCurrent - Output / Channel: 150mA Input Type: DC Voltage - Forward (Vf) (Typ): 1.25V Operating Temperature: -55°C ~ 110°C Mounting Type: Surface Mount Output Type: Darlington Package / Case: 6-SOIC (0.295", 7.50mm Width), 4 Leads Packaging: Cut Tape (CT) Current - DC Forward (If) (Max): 50 mA Number of Channels: 1 Rise / Fall Time (Typ): 40µs, 15µs Turn On / Turn Off Time (Typ): 50µs, 15µs Voltage - Output (Max): 300V Supplier Device Package: 6-SO, 4 Lead Vce Saturation (Max): 1V Current Transfer Ratio (Min): 1000% @ 1mA Voltage - Isolation: 5000Vrms |
на замовлення 4373 шт: термін постачання 21-31 дні (днів) |
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TLP387(D4,E | Toshiba Semiconductor and Storage |
Description: OPTOISOLATOR 5KV 1CH DARL 6-SOOperating Temperature: -55°C ~ 110°C Mounting Type: Surface Mount Output Type: Darlington Package / Case: 6-SOIC (0.295", 7.50mm Width), 4 Leads Packaging: Tube Current - DC Forward (If) (Max): 50 mA Number of Channels: 1 Rise / Fall Time (Typ): 40µs, 15µs Turn On / Turn Off Time (Typ): 50µs, 15µs Voltage - Output (Max): 300V Supplier Device Package: 6-SO, 4 Lead Vce Saturation (Max): 1.2V Current Transfer Ratio (Min): 1000% @ 1mA Voltage - Isolation: 5000Vrms Current - Output / Channel: 150mA Input Type: DC Voltage - Forward (Vf) (Typ): 1.25V |
на замовлення 195 шт: термін постачання 21-31 дні (днів) |
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TK115U65Z5,RQ | Toshiba Semiconductor and Storage |
Description: N-CH MOSFET, 650 V, 0.115 @10V,Packaging: Tape & Reel (TR) Package / Case: 8-PowerSFN Mounting Type: Surface Mount Operating Temperature: 150°C Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 24A (Ta) Rds On (Max) @ Id, Vgs: 115mOhm @ 12A, 10V Power Dissipation (Max): 190W (Tc) Vgs(th) (Max) @ Id: 4.5V @ 1.02mA Supplier Device Package: TOLL Drive Voltage (Max Rds On, Min Rds On): 10V Vgs (Max): ±30V Drain to Source Voltage (Vdss): 650 V Gate Charge (Qg) (Max) @ Vgs: 42 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 2280 pF @ 300 V |
на замовлення 4000 шт: термін постачання 21-31 дні (днів) |
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TK115U65Z5,RQ | Toshiba Semiconductor and Storage |
Description: N-CH MOSFET, 650 V, 0.115 @10V,Packaging: Cut Tape (CT) Package / Case: 8-PowerSFN Mounting Type: Surface Mount Operating Temperature: 150°C Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 24A (Ta) Rds On (Max) @ Id, Vgs: 115mOhm @ 12A, 10V Power Dissipation (Max): 190W (Tc) Vgs(th) (Max) @ Id: 4.5V @ 1.02mA Supplier Device Package: TOLL Drive Voltage (Max Rds On, Min Rds On): 10V Vgs (Max): ±30V Drain to Source Voltage (Vdss): 650 V Gate Charge (Qg) (Max) @ Vgs: 42 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 2280 pF @ 300 V |
на замовлення 4000 шт: термін постачання 21-31 дні (днів) |
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TK099N60Z1,S1F | Toshiba Semiconductor and Storage |
Description: N-CH MOSFET, 600 V, 0.099 @10V,Packaging: Tube Package / Case: TO-247-3 Mounting Type: Through Hole Operating Temperature: 150°C Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 25A (Ta) Rds On (Max) @ Id, Vgs: 99mOhm @ 8.1A, 10V Power Dissipation (Max): 176W (Tc) Vgs(th) (Max) @ Id: 4V @ 930µA Supplier Device Package: TO-247 Drive Voltage (Max Rds On, Min Rds On): 10V Vgs (Max): ±30V Drain to Source Voltage (Vdss): 600 V Gate Charge (Qg) (Max) @ Vgs: 36 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 2050 pF @ 300 V |
на замовлення 60 шт: термін постачання 21-31 дні (днів) |
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TK155U60Z1,RQ | Toshiba Semiconductor and Storage |
Description: N-CH MOSFET, 600 V, 0.155 @10V,Packaging: Tape & Reel (TR) Package / Case: 8-PowerSFN Mounting Type: Surface Mount Operating Temperature: 150°C Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 17A (Ta) Rds On (Max) @ Id, Vgs: 155mOhm @ 5.4A, 10V Power Dissipation (Max): 130W (Tc) Vgs(th) (Max) @ Id: 4V @ 610µA Supplier Device Package: TOLL Drive Voltage (Max Rds On, Min Rds On): 10V Vgs (Max): ±30V Drain to Source Voltage (Vdss): 600 V Gate Charge (Qg) (Max) @ Vgs: 24 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 1350 pF @ 300 V |
на замовлення 2000 шт: термін постачання 21-31 дні (днів) |
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TK155U60Z1,RQ | Toshiba Semiconductor and Storage |
Description: N-CH MOSFET, 600 V, 0.155 @10V,Packaging: Cut Tape (CT) Package / Case: 8-PowerSFN Mounting Type: Surface Mount Operating Temperature: 150°C Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 17A (Ta) Rds On (Max) @ Id, Vgs: 155mOhm @ 5.4A, 10V Power Dissipation (Max): 130W (Tc) Vgs(th) (Max) @ Id: 4V @ 610µA Supplier Device Package: TOLL Drive Voltage (Max Rds On, Min Rds On): 10V Vgs (Max): ±30V Drain to Source Voltage (Vdss): 600 V Gate Charge (Qg) (Max) @ Vgs: 24 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 1350 pF @ 300 V |
на замовлення 3989 шт: термін постачання 21-31 дні (днів) |
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TK125U60Z1,RQ | Toshiba Semiconductor and Storage |
Description: N-CH MOSFET, 600 V, 0.125 @10V,Packaging: Tape & Reel (TR) Package / Case: 8-PowerSFN Mounting Type: Surface Mount Operating Temperature: 150°C Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 20A (Ta) Rds On (Max) @ Id, Vgs: 125mOhm @ 6A, 10V Power Dissipation (Max): 150W (Tc) Vgs(th) (Max) @ Id: 4V @ 730µA Supplier Device Package: TOLL Drive Voltage (Max Rds On, Min Rds On): 10V Vgs (Max): ±30V Drain to Source Voltage (Vdss): 600 V Gate Charge (Qg) (Max) @ Vgs: 28 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 1620 pF @ 300 V |
на замовлення 4000 шт: термін постачання 21-31 дні (днів) |
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TK125U60Z1,RQ | Toshiba Semiconductor and Storage |
Description: N-CH MOSFET, 600 V, 0.125 @10V,Packaging: Cut Tape (CT) Package / Case: 8-PowerSFN Mounting Type: Surface Mount Operating Temperature: 150°C Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 20A (Ta) Rds On (Max) @ Id, Vgs: 125mOhm @ 6A, 10V Power Dissipation (Max): 150W (Tc) Vgs(th) (Max) @ Id: 4V @ 730µA Supplier Device Package: TOLL Drive Voltage (Max Rds On, Min Rds On): 10V Vgs (Max): ±30V Drain to Source Voltage (Vdss): 600 V Gate Charge (Qg) (Max) @ Vgs: 28 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 1620 pF @ 300 V |
на замовлення 4000 шт: термін постачання 21-31 дні (днів) |
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TK099U60Z1,RQ | Toshiba Semiconductor and Storage |
Description: N-CH MOSFET, 600 V, 0.099 @10V,Technology: MOSFET (Metal Oxide) Operating Temperature: 150°C Mounting Type: Surface Mount Package / Case: 8-PowerSFN Packaging: Tape & Reel (TR) Input Capacitance (Ciss) (Max) @ Vds: 2050 pF @ 300 V Gate Charge (Qg) (Max) @ Vgs: 36 nC @ 10 V Drain to Source Voltage (Vdss): 600 V Vgs (Max): ±30V Drive Voltage (Max Rds On, Min Rds On): 10V Supplier Device Package: TOLL Vgs(th) (Max) @ Id: 4V @ 930µA Power Dissipation (Max): 176W (Tc) Rds On (Max) @ Id, Vgs: 99mOhm @ 8.1A, 10V Current - Continuous Drain (Id) @ 25°C: 25A (Ta) FET Type: N-Channel |
на замовлення 4000 шт: термін постачання 21-31 дні (днів) |
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TK099U60Z1,RQ | Toshiba Semiconductor and Storage |
Description: N-CH MOSFET, 600 V, 0.099 @10V,Input Capacitance (Ciss) (Max) @ Vds: 2050 pF @ 300 V Gate Charge (Qg) (Max) @ Vgs: 36 nC @ 10 V Drain to Source Voltage (Vdss): 600 V Vgs (Max): ±30V Drive Voltage (Max Rds On, Min Rds On): 10V Supplier Device Package: TOLL Vgs(th) (Max) @ Id: 4V @ 930µA Power Dissipation (Max): 176W (Tc) Rds On (Max) @ Id, Vgs: 99mOhm @ 8.1A, 10V Current - Continuous Drain (Id) @ 25°C: 25A (Ta) FET Type: N-Channel Technology: MOSFET (Metal Oxide) Operating Temperature: 150°C Mounting Type: Surface Mount Package / Case: 8-PowerSFN Packaging: Cut Tape (CT) |
на замовлення 4000 шт: термін постачання 21-31 дні (днів) |
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TK080U60Z1,RQ | Toshiba Semiconductor and Storage |
Description: N-CH MOSFET, 600 V, 0.08 @10V, TTechnology: MOSFET (Metal Oxide) Operating Temperature: 150°C Mounting Type: Surface Mount Package / Case: 8-PowerSFN Packaging: Tape & Reel (TR) Input Capacitance (Ciss) (Max) @ Vds: 2510 pF @ 300 V Gate Charge (Qg) (Max) @ Vgs: 43 nC @ 10 V Drain to Source Voltage (Vdss): 600 V Vgs (Max): ±30V Drive Voltage (Max Rds On, Min Rds On): 10V Supplier Device Package: TOLL Vgs(th) (Max) @ Id: 4V @ 1.17mA Power Dissipation (Max): 211W (Tc) Rds On (Max) @ Id, Vgs: 80mOhm @ 10.3A, 10V Current - Continuous Drain (Id) @ 25°C: 30A (Ta) FET Type: N-Channel |
на замовлення 4000 шт: термін постачання 21-31 дні (днів) |
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TK080U60Z1,RQ | Toshiba Semiconductor and Storage |
Description: N-CH MOSFET, 600 V, 0.08 @10V, TInput Capacitance (Ciss) (Max) @ Vds: 2510 pF @ 300 V Gate Charge (Qg) (Max) @ Vgs: 43 nC @ 10 V Drain to Source Voltage (Vdss): 600 V Vgs (Max): ±30V Drive Voltage (Max Rds On, Min Rds On): 10V Supplier Device Package: TOLL Vgs(th) (Max) @ Id: 4V @ 1.17mA Power Dissipation (Max): 211W (Tc) Rds On (Max) @ Id, Vgs: 80mOhm @ 10.3A, 10V Current - Continuous Drain (Id) @ 25°C: 30A (Ta) FET Type: N-Channel Technology: MOSFET (Metal Oxide) Operating Temperature: 150°C Mounting Type: Surface Mount Package / Case: 8-PowerSFN Packaging: Cut Tape (CT) |
на замовлення 4000 шт: термін постачання 21-31 дні (днів) |
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CRZ18(TE85L,Q,M) | Toshiba Semiconductor and Storage |
Description: DIODE ZENER 18V 700MW SFLATTolerance: ±10% Packaging: Tape & Reel (TR) Package / Case: SOD-123F Mounting Type: Surface Mount Operating Temperature: -40°C ~ 150°C (TJ) Voltage - Zener (Nom) (Vz): 18 V Impedance (Max) (Zzt): 30 Ohms Supplier Device Package: S-FLAT (1.6x3.5) Power - Max: 700 mW Voltage - Forward (Vf) (Max) @ If: 1 V @ 200 mA Current - Reverse Leakage @ Vr: 10 µA @ 13 V |
на замовлення 3000 шт: термін постачання 21-31 дні (днів) |
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CRZ18(TE85L,Q,M) | Toshiba Semiconductor and Storage |
Description: DIODE ZENER 18V 700MW SFLATTolerance: ±10% Packaging: Cut Tape (CT) Package / Case: SOD-123F Mounting Type: Surface Mount Operating Temperature: -40°C ~ 150°C (TJ) Voltage - Zener (Nom) (Vz): 18 V Impedance (Max) (Zzt): 30 Ohms Supplier Device Package: S-FLAT (1.6x3.5) Power - Max: 700 mW Voltage - Forward (Vf) (Max) @ If: 1 V @ 200 mA Current - Reverse Leakage @ Vr: 10 µA @ 13 V |
на замовлення 5992 шт: термін постачання 21-31 дні (днів) |
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CRS05(TE85L,Q,M) | Toshiba Semiconductor and Storage |
Description: DIODE SCHOTTKY 30V 1A SFLATPackaging: Cut Tape (CT) Package / Case: SOD-123F Mounting Type: Surface Mount Speed: Fast Recovery =< 500ns, > 200mA (Io) Technology: Schottky Current - Average Rectified (Io): 1A Supplier Device Package: S-FLAT (1.6x3.5) Operating Temperature - Junction: -40°C ~ 150°C Voltage - DC Reverse (Vr) (Max): 30 V Voltage - Forward (Vf) (Max) @ If: 450 mV @ 1 A Current - Reverse Leakage @ Vr: 200 µA @ 30 V |
на замовлення 2227 шт: термін постачання 21-31 дні (днів) |
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TC7MBL3125CFK(EL) | Toshiba Semiconductor and Storage |
Description: IC BUS SWITCH 4 X 1:1 14-VSSOPPackaging: Tape & Reel (TR) Package / Case: 14-VFSOP (0.118", 3.00mm Width) Mounting Type: Surface Mount Circuit: 4 x 1:1 Type: Bus Switch Operating Temperature: -40°C ~ 85°C Voltage - Supply: 1.65V ~ 3.6V Independent Circuits: 1 Voltage Supply Source: Single Supply Supplier Device Package: 14-VSSOP |
на замовлення 2500 шт: термін постачання 21-31 дні (днів) |
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TC7MBL3125CFK(EL) | Toshiba Semiconductor and Storage |
Description: IC BUS SWITCH 4 X 1:1 14-VSSOPPackaging: Cut Tape (CT) Package / Case: 14-VFSOP (0.118", 3.00mm Width) Mounting Type: Surface Mount Circuit: 4 x 1:1 Type: Bus Switch Operating Temperature: -40°C ~ 85°C Voltage - Supply: 1.65V ~ 3.6V Independent Circuits: 1 Voltage Supply Source: Single Supply Supplier Device Package: 14-VSSOP |
на замовлення 7314 шт: термін постачання 21-31 дні (днів) |
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TK20J50D(F) | Toshiba Semiconductor and Storage |
Description: MOSFET N-CH 500V 20A TO3PPackaging: Tube Package / Case: TO-3P-3, SC-65-3 Mounting Type: Through Hole Operating Temperature: 150°C Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 20A Rds On (Max) @ Id, Vgs: 270mOhm @ 10A, 10V Power Dissipation (Max): 280W Vgs(th) (Max) @ Id: 4V @ 1mA Supplier Device Package: TO-3P(N) Drive Voltage (Max Rds On, Min Rds On): 10V Vgs (Max): ±30V Drain to Source Voltage (Vdss): 500 V Gate Charge (Qg) (Max) @ Vgs: 45 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 2600 pF @ 25 V |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||||||||||||
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TCR2LN21,LF(SE | Toshiba Semiconductor and Storage |
Description: IC REG LINEAR 2.1V 200MA 4-SDFNPackaging: Tape & Reel (TR) Package / Case: 4-XFDFN Exposed Pad Output Type: Fixed Mounting Type: Surface Mount Current - Output: 200mA Operating Temperature: -40°C ~ 85°C (TJ) Output Configuration: Positive Current - Quiescent (Iq): 2 µA Voltage - Input (Max): 5.5V Number of Regulators: 1 Supplier Device Package: 4-SDFN (0.8x0.8) Voltage - Output (Min/Fixed): 2.1V Control Features: Enable Voltage Dropout (Max): 0.54V @ 150mA Protection Features: Over Current |
товару немає в наявності |
Мінімальне замовлення: 10000 шт В кошику од. на суму грн. | ||||||||||||||||||
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TCR2LN21,LF(SE | Toshiba Semiconductor and Storage |
Description: IC REG LINEAR 2.1V 200MA 4-SDFNPackaging: Cut Tape (CT) Package / Case: 4-XFDFN Exposed Pad Output Type: Fixed Mounting Type: Surface Mount Current - Output: 200mA Operating Temperature: -40°C ~ 85°C (TJ) Output Configuration: Positive Current - Quiescent (Iq): 2 µA Voltage - Input (Max): 5.5V Number of Regulators: 1 Supplier Device Package: 4-SDFN (0.8x0.8) Voltage - Output (Min/Fixed): 2.1V Control Features: Enable Voltage Dropout (Max): 0.54V @ 150mA Protection Features: Over Current |
на замовлення 8179 шт: термін постачання 21-31 дні (днів) |
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| 74LVC2T45FK,LF(CT | Toshiba Semiconductor and Storage |
Description: IC XLTR VL BIDIR US8Packaging: Tape & Reel (TR) Package / Case: 8-VFSOP (0.091", 2.30mm Width) Output Type: Tri-State Mounting Type: Surface Mount Operating Temperature: -40°C ~ 125°C (TA) Supplier Device Package: US8 Channel Type: Bidirectional Translator Type: Voltage Level Channels per Circuit: 2 Voltage - VCCA: 1.65 V ~ 5.5 V Voltage - VCCB: 1.65 V ~ 5.5 V Number of Circuits: 1 |
товару немає в наявності |
Мінімальне замовлення: 3000 шт В кошику од. на суму грн. | |||||||||||||||||||
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TB67S149FG,EL | Toshiba Semiconductor and Storage |
Description: IC MOTOR DRIVER UNIPOLAR 28HSSOPPackaging: Tape & Reel (TR) Package / Case: 28-SOP (0.295", 7.50mm Width) + 2 Heat Tabs Mounting Type: Surface Mount Function: Driver - Fully Integrated, Control and Power Stage Current - Output: 3A Interface: Parallel Operating Temperature: -20°C ~ 85°C (TA) Output Configuration: Half Bridge (2) Voltage - Supply: 4.75V ~ 5.25V Applications: General Purpose Technology: Power MOSFET Voltage - Load: 10V ~ 40V Supplier Device Package: 28-HSSOP Motor Type - Stepper: Unipolar Step Resolution: 1 ~ 1/32 |
на замовлення 2000 шт: термін постачання 21-31 дні (днів) |
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TB67S149FG,EL | Toshiba Semiconductor and Storage |
Description: IC MOTOR DRIVER UNIPOLAR 28HSSOPPackaging: Cut Tape (CT) Package / Case: 28-SOP (0.295", 7.50mm Width) + 2 Heat Tabs Mounting Type: Surface Mount Function: Driver - Fully Integrated, Control and Power Stage Current - Output: 3A Interface: Parallel Operating Temperature: -20°C ~ 85°C (TA) Output Configuration: Half Bridge (2) Voltage - Supply: 4.75V ~ 5.25V Applications: General Purpose Technology: Power MOSFET Voltage - Load: 10V ~ 40V Supplier Device Package: 28-HSSOP Motor Type - Stepper: Unipolar Step Resolution: 1 ~ 1/32 |
на замовлення 3362 шт: термін постачання 21-31 дні (днів) |
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TB67S209FTG,EL | Toshiba Semiconductor and Storage |
Description: STEPPER MOTOR DRIVER IC, 50V/4.0Packaging: Tape & Reel (TR) Package / Case: 48-WFQFN Exposed Pad Mounting Type: Surface Mount Function: Driver - Fully Integrated, Control and Power Stage Current - Output: 3A Interface: Parallel Operating Temperature: -20°C ~ 85°C Output Configuration: Half Bridge (4) Voltage - Supply: 4.75V ~ 5.25V Applications: General Purpose Technology: NMOS, PMOS Voltage - Load: 10V ~ 47V Supplier Device Package: 48-WQFN (7x7) Motor Type - Stepper: Bipolar Motor Type - AC, DC: Brushed DC Step Resolution: 1, 1/2, 1/4, 1/8, 1/16, 1/32 |
на замовлення 4000 шт: термін постачання 21-31 дні (днів) |
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TB67S209FTG,EL | Toshiba Semiconductor and Storage |
Description: STEPPER MOTOR DRIVER IC, 50V/4.0Packaging: Cut Tape (CT) Package / Case: 48-WFQFN Exposed Pad Mounting Type: Surface Mount Function: Driver - Fully Integrated, Control and Power Stage Current - Output: 3A Interface: Parallel Operating Temperature: -20°C ~ 85°C Output Configuration: Half Bridge (4) Voltage - Supply: 4.75V ~ 5.25V Applications: General Purpose Technology: NMOS, PMOS Voltage - Load: 10V ~ 47V Supplier Device Package: 48-WQFN (7x7) Motor Type - Stepper: Bipolar Motor Type - AC, DC: Brushed DC Step Resolution: 1, 1/2, 1/4, 1/8, 1/16, 1/32 |
на замовлення 4000 шт: термін постачання 21-31 дні (днів) |
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TB67S579FTG(O,EL) | Toshiba Semiconductor and Storage |
Description: 2.0A/40V STEPPING MOTOR DRIVER IPackaging: Tape & Reel (TR) Package / Case: 48-VFQFN Exposed Pad Mounting Type: Surface Mount, Wettable Flank Function: Driver - Fully Integrated, Control and Power Stage Interface: PWM Operating Temperature: -40°C ~ 85°C Output Configuration: Half Bridge (4) Voltage - Supply: 2V ~ 5.5V Applications: General Purpose Technology: DMOS Voltage - Load: 4.5V ~ 34V Supplier Device Package: 48-VQFN (7x7) Motor Type - Stepper: Bipolar Motor Type - AC, DC: Brushless DC (BLDC) Step Resolution: 1, 1/2, 1/4, 1/8, 1/16, 1/32 |
товару немає в наявності |
Мінімальне замовлення: 4000 шт В кошику од. на суму грн. | ||||||||||||||||||
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TB67S579FTG(O,EL) | Toshiba Semiconductor and Storage |
Description: 2.0A/40V STEPPING MOTOR DRIVER IPackaging: Cut Tape (CT) Package / Case: 48-VFQFN Exposed Pad Mounting Type: Surface Mount, Wettable Flank Function: Driver - Fully Integrated, Control and Power Stage Interface: PWM Operating Temperature: -40°C ~ 85°C Output Configuration: Half Bridge (4) Voltage - Supply: 2V ~ 5.5V Applications: General Purpose Technology: DMOS Voltage - Load: 4.5V ~ 34V Supplier Device Package: 48-VQFN (7x7) Motor Type - Stepper: Bipolar Motor Type - AC, DC: Brushless DC (BLDC) Step Resolution: 1, 1/2, 1/4, 1/8, 1/16, 1/32 |
на замовлення 3422 шт: термін постачання 21-31 дні (днів) |
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TB67S559FTG(O,EL) | Toshiba Semiconductor and Storage |
Description: STEPPER MOTOR DRIVER IC, 50V/3.0Packaging: Tape & Reel (TR) Package / Case: 32-VFQFN Exposed Pad Mounting Type: Surface Mount Function: Driver - Fully Integrated, Control and Power Stage Current - Output: 3A Interface: Parallel, PWM Operating Temperature: -40°C ~ 85°C Output Configuration: Half Bridge (4) Voltage - Supply: 8.2V ~ 44V Applications: General Purpose Technology: DMOS Voltage - Load: 8.2V ~ 44V Supplier Device Package: 32-VQFN (5x5) Motor Type - Stepper: Bipolar Motor Type - AC, DC: Brushless DC (BLDC) Step Resolution: 1, 1/2, 1/4, 1/8, 1/16, 1/32 |
товару немає в наявності |
Мінімальне замовлення: 4000 шт В кошику од. на суму грн. | ||||||||||||||||||
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TB67S559FTG(O,EL) | Toshiba Semiconductor and Storage |
Description: STEPPER MOTOR DRIVER IC, 50V/3.0Packaging: Cut Tape (CT) Package / Case: 32-VFQFN Exposed Pad Mounting Type: Surface Mount Function: Driver - Fully Integrated, Control and Power Stage Current - Output: 3A Interface: Parallel, PWM Operating Temperature: -40°C ~ 85°C Output Configuration: Half Bridge (4) Voltage - Supply: 8.2V ~ 44V Applications: General Purpose Technology: DMOS Voltage - Load: 8.2V ~ 44V Supplier Device Package: 32-VQFN (5x5) Motor Type - Stepper: Bipolar Motor Type - AC, DC: Brushless DC (BLDC) Step Resolution: 1, 1/2, 1/4, 1/8, 1/16, 1/32 |
на замовлення 3494 шт: термін постачання 21-31 дні (днів) |
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CUZ75V,H3F | Toshiba Semiconductor and Storage |
Description: 75 V ZENER DIODE, SOD-323 SOD-32Capacitance @ Frequency: 24pF @ 1MHz Applications: General Purpose Operating Temperature: 150°C (TJ) Type: Zener Mounting Type: Surface Mount Package / Case: SC-76, SOD-323 Packaging: Tape & Reel (TR) Power Line Protection: No Power - Peak Pulse: 620W Voltage - Clamping (Max) @ Ipp: 112V Voltage - Breakdown (Min): 70V Unidirectional Channels: 1 Supplier Device Package: USC Voltage - Reverse Standoff (Typ): 66V (Max) Current - Peak Pulse (10/1000µs): 5A (8/20µs) |
товару немає в наявності |
Мінімальне замовлення: 3000 шт В кошику од. на суму грн. | ||||||||||||||||||
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CUZ75V,H3F | Toshiba Semiconductor and Storage |
Description: 75 V ZENER DIODE, SOD-323 SOD-32Power Line Protection: No Power - Peak Pulse: 620W Voltage - Clamping (Max) @ Ipp: 112V Voltage - Breakdown (Min): 70V Unidirectional Channels: 1 Supplier Device Package: USC Voltage - Reverse Standoff (Typ): 66V (Max) Current - Peak Pulse (10/1000µs): 5A (8/20µs) Capacitance @ Frequency: 24pF @ 1MHz Applications: General Purpose Operating Temperature: 150°C (TJ) Type: Zener Mounting Type: Surface Mount Package / Case: SC-76, SOD-323 Packaging: Cut Tape (CT) |
на замовлення 2740 шт: термін постачання 21-31 дні (днів) |
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TBD62503APG | Toshiba Semiconductor and Storage |
Description: IC PWR SWITCH N-CHAN 1:1 16DIPPackaging: Tube Package / Case: 16-DIP (0.300", 7.62mm) Output Type: N-Channel Mounting Type: Through Hole Number of Outputs: 7 Interface: On/Off Switch Type: General Purpose Operating Temperature: -40°C ~ 85°C (TA) Output Configuration: Low Side Input Type: Inverting Voltage - Load: 50V (Max) Voltage - Supply (Vcc/Vdd): Not Required Current - Output (Max): 300mA Ratio - Input:Output: 1:1 Supplier Device Package: 16-DIP |
на замовлення 1740 шт: термін постачання 21-31 дні (днів) |
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TC358748XBG(EL) | Toshiba Semiconductor and Storage |
Description: IC INTFACE SPECIALIZED 80VFBGAPackaging: Tape & Reel (TR) Package / Case: 80-VFBGA Mounting Type: Surface Mount Interface: SPI Voltage - Supply: 1.8V ~ 3.3V Applications: Camera Supplier Device Package: 80-VFBGA (7x7) |
товару немає в наявності |
Мінімальне замовлення: 1000 шт В кошику од. на суму грн. | ||||||||||||||||||
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TC358748XBG(EL) | Toshiba Semiconductor and Storage |
Description: IC INTFACE SPECIALIZED 80VFBGAPackaging: Cut Tape (CT) Package / Case: 80-VFBGA Mounting Type: Surface Mount Interface: SPI Voltage - Supply: 1.8V ~ 3.3V Applications: Camera Supplier Device Package: 80-VFBGA (7x7) |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||||||||||||
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HN1A01FU-GR,LXHF | Toshiba Semiconductor and Storage |
Description: PNP + PNP BIPOLAR TRANSISTOR, -5Packaging: Tape & Reel (TR) Package / Case: 6-TSSOP, SC-88, SOT-363 Mounting Type: Surface Mount Transistor Type: 2 PNP Power - Max: 200mW Current - Collector (Ic) (Max): 150mA Voltage - Collector Emitter Breakdown (Max): 50V Vce Saturation (Max) @ Ib, Ic: 300mV @ 10mA, 100mA Current - Collector Cutoff (Max): 100nA (ICBO) DC Current Gain (hFE) (Min) @ Ic, Vce: 200 @ 2mA, 6V Frequency - Transition: 80MHz Supplier Device Package: US6 Grade: Automotive Qualification: AEC-Q101 |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||||||||||||
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SSM5P15FU,LF | Toshiba Semiconductor and Storage |
Description: MOSFET 2P-CH 30V 0.1A USVSupplier Device Package: USV Vgs(th) (Max) @ Id: 1.7V @ 100µA Rds On (Max) @ Id, Vgs: 12Ohm @ 10mA, 4V Input Capacitance (Ciss) (Max) @ Vds: 9.1pF @ 3V Current - Continuous Drain (Id) @ 25°C: 100mA (Ta) Drain to Source Voltage (Vdss): 30V Power - Max: 200mW (Ta) Technology: MOSFET (Metal Oxide) Operating Temperature: 150°C Configuration: 2 P-Channel (Dual) Mounting Type: Surface Mount Package / Case: 5-TSSOP, SC-70-5, SOT-353 Packaging: Tape & Reel (TR) |
товару немає в наявності |
Мінімальне замовлення: 3000 шт В кошику од. на суму грн. | ||||||||||||||||||
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SSM5P15FU,LF | Toshiba Semiconductor and Storage |
Description: MOSFET 2P-CH 30V 0.1A USVPackaging: Cut Tape (CT) Supplier Device Package: USV Vgs(th) (Max) @ Id: 1.7V @ 100µA Rds On (Max) @ Id, Vgs: 12Ohm @ 10mA, 4V Input Capacitance (Ciss) (Max) @ Vds: 9.1pF @ 3V Current - Continuous Drain (Id) @ 25°C: 100mA (Ta) Drain to Source Voltage (Vdss): 30V Power - Max: 200mW (Ta) Technology: MOSFET (Metal Oxide) Operating Temperature: 150°C Configuration: 2 P-Channel (Dual) Mounting Type: Surface Mount Package / Case: 5-TSSOP, SC-70-5, SOT-353 |
на замовлення 2956 шт: термін постачання 21-31 дні (днів) |
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RN2701,LF | Toshiba Semiconductor and Storage |
Description: TRANS PREBIAS 2PNP 50V 100MA USVPackaging: Tape & Reel (TR) Package / Case: 5-TSSOP, SC-70-5, SOT-353 Mounting Type: Surface Mount Transistor Type: 2 PNP - Pre-Biased (Dual) Power - Max: 200mW Current - Collector (Ic) (Max): 100mA Voltage - Collector Emitter Breakdown (Max): 50V Vce Saturation (Max) @ Ib, Ic: 300mV @ 250µA, 5mA Current - Collector Cutoff (Max): 500nA DC Current Gain (hFE) (Min) @ Ic, Vce: 30 @ 10mA, 5V Frequency - Transition: 200MHz Resistor - Base (R1): 4.7kOhms Resistor - Emitter Base (R2): 4.7kOhms Supplier Device Package: USV |
на замовлення 6000 шт: термін постачання 21-31 дні (днів) |
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RN2701,LF | Toshiba Semiconductor and Storage |
Description: TRANS PREBIAS 2PNP 50V 100MA USVPackaging: Cut Tape (CT) Package / Case: 5-TSSOP, SC-70-5, SOT-353 Mounting Type: Surface Mount Transistor Type: 2 PNP - Pre-Biased (Dual) Power - Max: 200mW Current - Collector (Ic) (Max): 100mA Voltage - Collector Emitter Breakdown (Max): 50V Vce Saturation (Max) @ Ib, Ic: 300mV @ 250µA, 5mA Current - Collector Cutoff (Max): 500nA DC Current Gain (hFE) (Min) @ Ic, Vce: 30 @ 10mA, 5V Frequency - Transition: 200MHz Resistor - Base (R1): 4.7kOhms Resistor - Emitter Base (R2): 4.7kOhms Supplier Device Package: USV |
на замовлення 8938 шт: термін постачання 21-31 дні (днів) |
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DF2B6USL,L3F | Toshiba Semiconductor and Storage |
Description: TVS DIODE 5.5VWM 20VC SL2Packaging: Tape & Reel (TR) Package / Case: 2-SMD, No Lead Mounting Type: Surface Mount Type: Zener Operating Temperature: 150°C (TJ) Capacitance @ Frequency: 1.5pF @ 1MHz Current - Peak Pulse (10/1000µs): 1.5A (8/20µs) Voltage - Reverse Standoff (Typ): 5.5V (Max) Supplier Device Package: SL2 Bidirectional Channels: 1 Voltage - Breakdown (Min): 5.7V Voltage - Clamping (Max) @ Ipp: 20V Power - Peak Pulse: 30W Power Line Protection: No |
товару немає в наявності |
Мінімальне замовлення: 10000 шт В кошику од. на суму грн. | ||||||||||||||||||
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DF2B6USL,L3F | Toshiba Semiconductor and Storage |
Description: TVS DIODE 5.5VWM 20VC SL2Packaging: Cut Tape (CT) Package / Case: 2-SMD, No Lead Mounting Type: Surface Mount Type: Zener Operating Temperature: 150°C (TJ) Capacitance @ Frequency: 1.5pF @ 1MHz Current - Peak Pulse (10/1000µs): 1.5A (8/20µs) Voltage - Reverse Standoff (Typ): 5.5V (Max) Supplier Device Package: SL2 Bidirectional Channels: 1 Voltage - Breakdown (Min): 5.7V Voltage - Clamping (Max) @ Ipp: 20V Power - Peak Pulse: 30W Power Line Protection: No |
на замовлення 492 шт: термін постачання 21-31 дні (днів) |
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| CMH07,LQ |
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Виробник: Toshiba Semiconductor and Storage
Description: 200 V/2 A RECTIFIER DIODE, M-FLA
Packaging: Cut Tape (CT)
Package / Case: SOD-128
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 100 ns
Technology: Standard
Current - Average Rectified (Io): 2A
Supplier Device Package: M-FLAT (2.4x3.8)
Operating Temperature - Junction: -40°C ~ 150°C
Voltage - DC Reverse (Vr) (Max): 200 V
Voltage - Forward (Vf) (Max) @ If: 980 mV @ 2 A
Current - Reverse Leakage @ Vr: 10 µA @ 200 V
Description: 200 V/2 A RECTIFIER DIODE, M-FLA
Packaging: Cut Tape (CT)
Package / Case: SOD-128
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 100 ns
Technology: Standard
Current - Average Rectified (Io): 2A
Supplier Device Package: M-FLAT (2.4x3.8)
Operating Temperature - Junction: -40°C ~ 150°C
Voltage - DC Reverse (Vr) (Max): 200 V
Voltage - Forward (Vf) (Max) @ If: 980 mV @ 2 A
Current - Reverse Leakage @ Vr: 10 µA @ 200 V
на замовлення 6000 шт:
термін постачання 21-31 дні (днів)
| Кількість | Ціна без ПДВ |
|---|---|
| 6+ | 54.24 грн |
| 10+ | 32.76 грн |
| 100+ | 21.17 грн |
| 500+ | 15.19 грн |
| 1000+ | 13.68 грн |
| TC74HC123AF |
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Виробник: Toshiba Semiconductor and Storage
Description: SOP16 DUAL MONOSTABLE MULTIVIBRA
Packaging: Tape & Reel (TR)
Package / Case: 16-SOIC (0.209", 5.30mm Width)
Mounting Type: Surface Mount
Logic Type: Monostable
Operating Temperature: -40°C ~ 85°C
Propagation Delay: 23 ns
Independent Circuits: 2
Current - Output High, Low: 5.2mA, 5.2mA
Schmitt Trigger Input: Yes
Supplier Device Package: 16-SOP
Voltage - Supply: 2 V ~ 6 V
Description: SOP16 DUAL MONOSTABLE MULTIVIBRA
Packaging: Tape & Reel (TR)
Package / Case: 16-SOIC (0.209", 5.30mm Width)
Mounting Type: Surface Mount
Logic Type: Monostable
Operating Temperature: -40°C ~ 85°C
Propagation Delay: 23 ns
Independent Circuits: 2
Current - Output High, Low: 5.2mA, 5.2mA
Schmitt Trigger Input: Yes
Supplier Device Package: 16-SOP
Voltage - Supply: 2 V ~ 6 V
товару немає в наявності
В кошику
од. на суму грн.
| TCR3LM50A,RF |
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Виробник: Toshiba Semiconductor and Storage
Description: OUTPUT LDO REGULATOR 300 MA FIXE
Packaging: Tape & Reel (TR)
Package / Case: 4-XDFN Exposed Pad
Output Type: Fixed
Mounting Type: Surface Mount
Current - Output: 300mA
Operating Temperature: -40°C ~ 85°C
Output Configuration: Positive
Current - Quiescent (Iq): 2.2 µA
Voltage - Input (Max): 5.5V
Number of Regulators: 1
Supplier Device Package: 4-DFN (1x1)
Voltage - Output (Min/Fixed): 5V
Control Features: Enable
PSRR: 74dB ~ 43dB (100Hz ~ 100kHz)
Voltage Dropout (Max): 0.205V @ 200mA
Protection Features: Over Current, Over Temperature
Description: OUTPUT LDO REGULATOR 300 MA FIXE
Packaging: Tape & Reel (TR)
Package / Case: 4-XDFN Exposed Pad
Output Type: Fixed
Mounting Type: Surface Mount
Current - Output: 300mA
Operating Temperature: -40°C ~ 85°C
Output Configuration: Positive
Current - Quiescent (Iq): 2.2 µA
Voltage - Input (Max): 5.5V
Number of Regulators: 1
Supplier Device Package: 4-DFN (1x1)
Voltage - Output (Min/Fixed): 5V
Control Features: Enable
PSRR: 74dB ~ 43dB (100Hz ~ 100kHz)
Voltage Dropout (Max): 0.205V @ 200mA
Protection Features: Over Current, Over Temperature
на замовлення 10000 шт:
термін постачання 21-31 дні (днів)
| Кількість | Ціна без ПДВ |
|---|---|
| 5000+ | 6.05 грн |
| 10000+ | 5.66 грн |
| TCR3LM50A,RF |
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Виробник: Toshiba Semiconductor and Storage
Description: OUTPUT LDO REGULATOR 300 MA FIXE
Packaging: Cut Tape (CT)
Package / Case: 4-XDFN Exposed Pad
Output Type: Fixed
Mounting Type: Surface Mount
Current - Output: 300mA
Operating Temperature: -40°C ~ 85°C
Output Configuration: Positive
Current - Quiescent (Iq): 2.2 µA
Voltage - Input (Max): 5.5V
Number of Regulators: 1
Supplier Device Package: 4-DFN (1x1)
Voltage - Output (Min/Fixed): 5V
Control Features: Enable
PSRR: 74dB ~ 43dB (100Hz ~ 100kHz)
Voltage Dropout (Max): 0.205V @ 200mA
Protection Features: Over Current, Over Temperature
Description: OUTPUT LDO REGULATOR 300 MA FIXE
Packaging: Cut Tape (CT)
Package / Case: 4-XDFN Exposed Pad
Output Type: Fixed
Mounting Type: Surface Mount
Current - Output: 300mA
Operating Temperature: -40°C ~ 85°C
Output Configuration: Positive
Current - Quiescent (Iq): 2.2 µA
Voltage - Input (Max): 5.5V
Number of Regulators: 1
Supplier Device Package: 4-DFN (1x1)
Voltage - Output (Min/Fixed): 5V
Control Features: Enable
PSRR: 74dB ~ 43dB (100Hz ~ 100kHz)
Voltage Dropout (Max): 0.205V @ 200mA
Protection Features: Over Current, Over Temperature
на замовлення 10000 шт:
термін постачання 21-31 дні (днів)
| Кількість | Ціна без ПДВ |
|---|---|
| 22+ | 14.72 грн |
| 30+ | 10.07 грн |
| 34+ | 8.95 грн |
| 100+ | 7.17 грн |
| 250+ | 6.59 грн |
| 500+ | 6.24 грн |
| 1000+ | 5.86 грн |
| 2500+ | 5.56 грн |
| 7UL3G34FK,LF |
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Виробник: Toshiba Semiconductor and Storage
Description: IC BUFFER NON-INVERTING 3.6V US8
Supplier Device Package: US8
Current - Output High, Low: 8mA, 8mA
Number of Bits per Element: 1
Voltage - Supply: 0.9V ~ 3.6V
Operating Temperature: -40°C ~ 125°C (TA)
Logic Type: Buffer, Non-Inverting
Number of Elements: 3
Mounting Type: Surface Mount
Package / Case: 8-VFSOP (0.091", 2.30mm Width)
Packaging: Tape & Reel (TR)
Description: IC BUFFER NON-INVERTING 3.6V US8
Supplier Device Package: US8
Current - Output High, Low: 8mA, 8mA
Number of Bits per Element: 1
Voltage - Supply: 0.9V ~ 3.6V
Operating Temperature: -40°C ~ 125°C (TA)
Logic Type: Buffer, Non-Inverting
Number of Elements: 3
Mounting Type: Surface Mount
Package / Case: 8-VFSOP (0.091", 2.30mm Width)
Packaging: Tape & Reel (TR)
на замовлення 3000 шт:
термін постачання 21-31 дні (днів)
| Кількість | Ціна без ПДВ |
|---|---|
| 3000+ | 5.75 грн |
| 7UL3G34FK,LF |
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Виробник: Toshiba Semiconductor and Storage
Description: IC BUFFER NON-INVERTING 3.6V US8
Supplier Device Package: US8
Current - Output High, Low: 8mA, 8mA
Number of Bits per Element: 1
Voltage - Supply: 0.9V ~ 3.6V
Operating Temperature: -40°C ~ 125°C (TA)
Logic Type: Buffer, Non-Inverting
Number of Elements: 3
Mounting Type: Surface Mount
Package / Case: 8-VFSOP (0.091", 2.30mm Width)
Packaging: Cut Tape (CT)
Description: IC BUFFER NON-INVERTING 3.6V US8
Supplier Device Package: US8
Current - Output High, Low: 8mA, 8mA
Number of Bits per Element: 1
Voltage - Supply: 0.9V ~ 3.6V
Operating Temperature: -40°C ~ 125°C (TA)
Logic Type: Buffer, Non-Inverting
Number of Elements: 3
Mounting Type: Surface Mount
Package / Case: 8-VFSOP (0.091", 2.30mm Width)
Packaging: Cut Tape (CT)
на замовлення 3856 шт:
термін постачання 21-31 дні (днів)
| Кількість | Ціна без ПДВ |
|---|---|
| 20+ | 15.50 грн |
| 31+ | 9.78 грн |
| 35+ | 8.63 грн |
| 100+ | 6.93 грн |
| 250+ | 6.36 грн |
| 500+ | 6.02 грн |
| 1000+ | 5.65 грн |
| 2SC4738-Y,LXHF |
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Виробник: Toshiba Semiconductor and Storage
Description: NPN BIPOLAR TRANSISTOR 50V 0.15A
Transistor Type: NPN
Mounting Type: Surface Mount
Package / Case: SC-75, SOT-416
Packaging: Tape & Reel (TR)
Qualification: AEC-Q101
Power - Max: 120 mW
Voltage - Collector Emitter Breakdown (Max): 50 V
Current - Collector (Ic) (Max): 150 mA
Grade: Automotive
Supplier Device Package: SSM
Frequency - Transition: 80MHz
DC Current Gain (hFE) (Min) @ Ic, Vce: 120 @ 2mA, 6V
Current - Collector Cutoff (Max): 100nA (ICBO)
Vce Saturation (Max) @ Ib, Ic: 250mV @ 10mA, 100mA
Description: NPN BIPOLAR TRANSISTOR 50V 0.15A
Transistor Type: NPN
Mounting Type: Surface Mount
Package / Case: SC-75, SOT-416
Packaging: Tape & Reel (TR)
Qualification: AEC-Q101
Power - Max: 120 mW
Voltage - Collector Emitter Breakdown (Max): 50 V
Current - Collector (Ic) (Max): 150 mA
Grade: Automotive
Supplier Device Package: SSM
Frequency - Transition: 80MHz
DC Current Gain (hFE) (Min) @ Ic, Vce: 120 @ 2mA, 6V
Current - Collector Cutoff (Max): 100nA (ICBO)
Vce Saturation (Max) @ Ib, Ic: 250mV @ 10mA, 100mA
на замовлення 6000 шт:
термін постачання 21-31 дні (днів)
| Кількість | Ціна без ПДВ |
|---|---|
| 3000+ | 2.73 грн |
| 6000+ | 2.53 грн |
| 2SC4738-Y,LXHF |
![]() |
Виробник: Toshiba Semiconductor and Storage
Description: NPN BIPOLAR TRANSISTOR 50V 0.15A
Qualification: AEC-Q101
Power - Max: 120 mW
Voltage - Collector Emitter Breakdown (Max): 50 V
Current - Collector (Ic) (Max): 150 mA
Grade: Automotive
Supplier Device Package: SSM
Frequency - Transition: 80MHz
DC Current Gain (hFE) (Min) @ Ic, Vce: 120 @ 2mA, 6V
Current - Collector Cutoff (Max): 100nA (ICBO)
Vce Saturation (Max) @ Ib, Ic: 250mV @ 10mA, 100mA
Transistor Type: NPN
Mounting Type: Surface Mount
Package / Case: SC-75, SOT-416
Packaging: Cut Tape (CT)
Description: NPN BIPOLAR TRANSISTOR 50V 0.15A
Qualification: AEC-Q101
Power - Max: 120 mW
Voltage - Collector Emitter Breakdown (Max): 50 V
Current - Collector (Ic) (Max): 150 mA
Grade: Automotive
Supplier Device Package: SSM
Frequency - Transition: 80MHz
DC Current Gain (hFE) (Min) @ Ic, Vce: 120 @ 2mA, 6V
Current - Collector Cutoff (Max): 100nA (ICBO)
Vce Saturation (Max) @ Ib, Ic: 250mV @ 10mA, 100mA
Transistor Type: NPN
Mounting Type: Surface Mount
Package / Case: SC-75, SOT-416
Packaging: Cut Tape (CT)
на замовлення 6000 шт:
термін постачання 21-31 дні (днів)
| Кількість | Ціна без ПДВ |
|---|---|
| 45+ | 6.97 грн |
| 64+ | 4.70 грн |
| 73+ | 4.12 грн |
| 100+ | 3.26 грн |
| 250+ | 2.97 грн |
| 500+ | 2.79 грн |
| 1000+ | 2.60 грн |
| RN1114MFV,L3F |
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Виробник: Toshiba Semiconductor and Storage
Description: TRANS PREBIAS NPN 50V 0.1A VESM
Resistors Included: R1 and R2
Resistor - Emitter Base (R2): 10 kOhms
Resistor - Base (R1): 1 kOhms
Frequency - Transition: 250 MHz
Power - Max: 150 mW
Voltage - Collector Emitter Breakdown (Max): 50 V
Current - Collector (Ic) (Max): 100 mA
Supplier Device Package: VESM
DC Current Gain (hFE) (Min) @ Ic, Vce: 50 @ 10mA, 5V
Current - Collector Cutoff (Max): 500nA
Vce Saturation (Max) @ Ib, Ic: 300mV @ 250µA, 5mA
Transistor Type: NPN - Pre-Biased
Mounting Type: Surface Mount
Package / Case: SOT-723
Packaging: Tape & Reel (TR)
Description: TRANS PREBIAS NPN 50V 0.1A VESM
Resistors Included: R1 and R2
Resistor - Emitter Base (R2): 10 kOhms
Resistor - Base (R1): 1 kOhms
Frequency - Transition: 250 MHz
Power - Max: 150 mW
Voltage - Collector Emitter Breakdown (Max): 50 V
Current - Collector (Ic) (Max): 100 mA
Supplier Device Package: VESM
DC Current Gain (hFE) (Min) @ Ic, Vce: 50 @ 10mA, 5V
Current - Collector Cutoff (Max): 500nA
Vce Saturation (Max) @ Ib, Ic: 300mV @ 250µA, 5mA
Transistor Type: NPN - Pre-Biased
Mounting Type: Surface Mount
Package / Case: SOT-723
Packaging: Tape & Reel (TR)
товару немає в наявності
Мінімальне замовлення: 8000 шт
В кошику
од. на суму грн.
| RN1114MFV,L3F |
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Виробник: Toshiba Semiconductor and Storage
Description: TRANS PREBIAS NPN 50V 0.1A VESM
Power - Max: 150 mW
Voltage - Collector Emitter Breakdown (Max): 50 V
Current - Collector (Ic) (Max): 100 mA
Supplier Device Package: VESM
DC Current Gain (hFE) (Min) @ Ic, Vce: 50 @ 10mA, 5V
Current - Collector Cutoff (Max): 500nA
Vce Saturation (Max) @ Ib, Ic: 300mV @ 250µA, 5mA
Transistor Type: NPN - Pre-Biased
Mounting Type: Surface Mount
Package / Case: SOT-723
Packaging: Cut Tape (CT)
Resistors Included: R1 and R2
Resistor - Emitter Base (R2): 10 kOhms
Resistor - Base (R1): 1 kOhms
Frequency - Transition: 250 MHz
Description: TRANS PREBIAS NPN 50V 0.1A VESM
Power - Max: 150 mW
Voltage - Collector Emitter Breakdown (Max): 50 V
Current - Collector (Ic) (Max): 100 mA
Supplier Device Package: VESM
DC Current Gain (hFE) (Min) @ Ic, Vce: 50 @ 10mA, 5V
Current - Collector Cutoff (Max): 500nA
Vce Saturation (Max) @ Ib, Ic: 300mV @ 250µA, 5mA
Transistor Type: NPN - Pre-Biased
Mounting Type: Surface Mount
Package / Case: SOT-723
Packaging: Cut Tape (CT)
Resistors Included: R1 and R2
Resistor - Emitter Base (R2): 10 kOhms
Resistor - Base (R1): 1 kOhms
Frequency - Transition: 250 MHz
на замовлення 6394 шт:
термін постачання 21-31 дні (днів)
| Кількість | Ціна без ПДВ |
|---|---|
| 27+ | 11.62 грн |
| 42+ | 7.16 грн |
| 100+ | 4.43 грн |
| 500+ | 3.03 грн |
| 1000+ | 2.66 грн |
| 2000+ | 2.35 грн |
| RN2114MFV,L3F |
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Виробник: Toshiba Semiconductor and Storage
Description: TRANS PREBIAS PNP 50V 0.1A VESM
Resistors Included: R1 and R2
Resistor - Emitter Base (R2): 10 kOhms
Resistor - Base (R1): 1 kOhms
Power - Max: 150 mW
Voltage - Collector Emitter Breakdown (Max): 50 V
Current - Collector (Ic) (Max): 100 mA
Supplier Device Package: VESM
DC Current Gain (hFE) (Min) @ Ic, Vce: 50 @ 10mA, 5V
Current - Collector Cutoff (Max): 500nA
Vce Saturation (Max) @ Ib, Ic: 300mV @ 500µA, 5mA
Transistor Type: PNP - Pre-Biased
Mounting Type: Surface Mount
Package / Case: SOT-723
Packaging: Tape & Reel (TR)
Description: TRANS PREBIAS PNP 50V 0.1A VESM
Resistors Included: R1 and R2
Resistor - Emitter Base (R2): 10 kOhms
Resistor - Base (R1): 1 kOhms
Power - Max: 150 mW
Voltage - Collector Emitter Breakdown (Max): 50 V
Current - Collector (Ic) (Max): 100 mA
Supplier Device Package: VESM
DC Current Gain (hFE) (Min) @ Ic, Vce: 50 @ 10mA, 5V
Current - Collector Cutoff (Max): 500nA
Vce Saturation (Max) @ Ib, Ic: 300mV @ 500µA, 5mA
Transistor Type: PNP - Pre-Biased
Mounting Type: Surface Mount
Package / Case: SOT-723
Packaging: Tape & Reel (TR)
товару немає в наявності
Мінімальне замовлення: 8000 шт
В кошику
од. на суму грн.
| RN2114MFV,L3F |
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Виробник: Toshiba Semiconductor and Storage
Description: TRANS PREBIAS PNP 50V 0.1A VESM
Resistors Included: R1 and R2
Resistor - Emitter Base (R2): 10 kOhms
Resistor - Base (R1): 1 kOhms
Power - Max: 150 mW
Voltage - Collector Emitter Breakdown (Max): 50 V
Current - Collector (Ic) (Max): 100 mA
Supplier Device Package: VESM
DC Current Gain (hFE) (Min) @ Ic, Vce: 50 @ 10mA, 5V
Current - Collector Cutoff (Max): 500nA
Vce Saturation (Max) @ Ib, Ic: 300mV @ 500µA, 5mA
Transistor Type: PNP - Pre-Biased
Mounting Type: Surface Mount
Package / Case: SOT-723
Packaging: Cut Tape (CT)
Description: TRANS PREBIAS PNP 50V 0.1A VESM
Resistors Included: R1 and R2
Resistor - Emitter Base (R2): 10 kOhms
Resistor - Base (R1): 1 kOhms
Power - Max: 150 mW
Voltage - Collector Emitter Breakdown (Max): 50 V
Current - Collector (Ic) (Max): 100 mA
Supplier Device Package: VESM
DC Current Gain (hFE) (Min) @ Ic, Vce: 50 @ 10mA, 5V
Current - Collector Cutoff (Max): 500nA
Vce Saturation (Max) @ Ib, Ic: 300mV @ 500µA, 5mA
Transistor Type: PNP - Pre-Biased
Mounting Type: Surface Mount
Package / Case: SOT-723
Packaging: Cut Tape (CT)
на замовлення 7856 шт:
термін постачання 21-31 дні (днів)
| Кількість | Ціна без ПДВ |
|---|---|
| 27+ | 11.62 грн |
| 42+ | 7.16 грн |
| 100+ | 4.43 грн |
| 500+ | 3.03 грн |
| 1000+ | 2.66 грн |
| 2000+ | 2.35 грн |
| MN06ACA10T |
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Виробник: Toshiba Semiconductor and Storage
Description: HDD 10TB 3.5" SATA III 5V/12V
Packaging: Bulk
Size / Dimension: 147.00mm x 101.85mm x 26.10mm
Memory Size: 10TB
Memory Type: Magnetic Disk (HDD)
Type: SATA III
Operating Temperature: 0°C ~ 60°C
Voltage - Supply: 5V, 12V
Form Factor: 3.5"
Description: HDD 10TB 3.5" SATA III 5V/12V
Packaging: Bulk
Size / Dimension: 147.00mm x 101.85mm x 26.10mm
Memory Size: 10TB
Memory Type: Magnetic Disk (HDD)
Type: SATA III
Operating Temperature: 0°C ~ 60°C
Voltage - Supply: 5V, 12V
Form Factor: 3.5"
товару немає в наявності
Мінімальне замовлення: 20 шт
В кошику
од. на суму грн.
| MN06ACA600 |
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Виробник: Toshiba Semiconductor and Storage
Description: HDD 6TB 3.5" SATA III 5V/12V
Packaging: Bulk
Size / Dimension: 147.00mm x 101.85mm x 26.10mm
Memory Size: 6TB
Memory Type: Magnetic Disk (HDD)
Type: SATA III
Operating Temperature: 0°C ~ 60°C
Voltage - Supply: 5V, 12V
Form Factor: 3.5"
Description: HDD 6TB 3.5" SATA III 5V/12V
Packaging: Bulk
Size / Dimension: 147.00mm x 101.85mm x 26.10mm
Memory Size: 6TB
Memory Type: Magnetic Disk (HDD)
Type: SATA III
Operating Temperature: 0°C ~ 60°C
Voltage - Supply: 5V, 12V
Form Factor: 3.5"
товару немає в наявності
В кошику
од. на суму грн.
| MN06ACA800 |
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Виробник: Toshiba Semiconductor and Storage
Description: HDD 8TB 3.5" SATA III 5V/12V
Packaging: Bulk
Size / Dimension: 147.00mm x 101.85mm x 26.10mm
Memory Size: 8TB
Memory Type: Magnetic Disk (HDD)
Type: SATA III
Operating Temperature: 0°C ~ 60°C
Voltage - Supply: 5V, 12V
Form Factor: 3.5"
Description: HDD 8TB 3.5" SATA III 5V/12V
Packaging: Bulk
Size / Dimension: 147.00mm x 101.85mm x 26.10mm
Memory Size: 8TB
Memory Type: Magnetic Disk (HDD)
Type: SATA III
Operating Temperature: 0°C ~ 60°C
Voltage - Supply: 5V, 12V
Form Factor: 3.5"
товару немає в наявності
В кошику
од. на суму грн.
| TLP387(TPR,E |
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Виробник: Toshiba Semiconductor and Storage
Description: OPTOISOLATOR 5KV 1CH DARL 6-SO
Current - DC Forward (If) (Max): 50 mA
Number of Channels: 1
Output Type: Darlington
Package / Case: 6-SOIC (0.295", 7.50mm Width), 4 Leads
Packaging: Tape & Reel (TR)
Rise / Fall Time (Typ): 40µs, 15µs
Turn On / Turn Off Time (Typ): 50µs, 15µs
Voltage - Output (Max): 300V
Supplier Device Package: 6-SO, 4 Lead
Vce Saturation (Max): 1V
Current Transfer Ratio (Min): 1000% @ 1mA
Voltage - Isolation: 5000Vrms
Current - Output / Channel: 150mA
Input Type: DC
Voltage - Forward (Vf) (Typ): 1.25V
Operating Temperature: -55°C ~ 110°C
Mounting Type: Surface Mount
Description: OPTOISOLATOR 5KV 1CH DARL 6-SO
Current - DC Forward (If) (Max): 50 mA
Number of Channels: 1
Output Type: Darlington
Package / Case: 6-SOIC (0.295", 7.50mm Width), 4 Leads
Packaging: Tape & Reel (TR)
Rise / Fall Time (Typ): 40µs, 15µs
Turn On / Turn Off Time (Typ): 50µs, 15µs
Voltage - Output (Max): 300V
Supplier Device Package: 6-SO, 4 Lead
Vce Saturation (Max): 1V
Current Transfer Ratio (Min): 1000% @ 1mA
Voltage - Isolation: 5000Vrms
Current - Output / Channel: 150mA
Input Type: DC
Voltage - Forward (Vf) (Typ): 1.25V
Operating Temperature: -55°C ~ 110°C
Mounting Type: Surface Mount
на замовлення 6000 шт:
термін постачання 21-31 дні (днів)
| Кількість | Ціна без ПДВ |
|---|---|
| 3000+ | 20.66 грн |
| 6000+ | 18.93 грн |
| TLP387(TPR,E |
![]() |
Виробник: Toshiba Semiconductor and Storage
Description: OPTOISOLATOR 5KV 1CH DARL 6-SO
Vce Saturation (Max): 1V
Current Transfer Ratio (Min): 1000% @ 1mA
Voltage - Isolation: 5000Vrms
Current - Output / Channel: 150mA
Input Type: DC
Voltage - Forward (Vf) (Typ): 1.25V
Operating Temperature: -55°C ~ 110°C
Mounting Type: Surface Mount
Output Type: Darlington
Package / Case: 6-SOIC (0.295", 7.50mm Width), 4 Leads
Packaging: Cut Tape (CT)
Current - DC Forward (If) (Max): 50 mA
Number of Channels: 1
Rise / Fall Time (Typ): 40µs, 15µs
Turn On / Turn Off Time (Typ): 50µs, 15µs
Voltage - Output (Max): 300V
Supplier Device Package: 6-SO, 4 Lead
Description: OPTOISOLATOR 5KV 1CH DARL 6-SO
Vce Saturation (Max): 1V
Current Transfer Ratio (Min): 1000% @ 1mA
Voltage - Isolation: 5000Vrms
Current - Output / Channel: 150mA
Input Type: DC
Voltage - Forward (Vf) (Typ): 1.25V
Operating Temperature: -55°C ~ 110°C
Mounting Type: Surface Mount
Output Type: Darlington
Package / Case: 6-SOIC (0.295", 7.50mm Width), 4 Leads
Packaging: Cut Tape (CT)
Current - DC Forward (If) (Max): 50 mA
Number of Channels: 1
Rise / Fall Time (Typ): 40µs, 15µs
Turn On / Turn Off Time (Typ): 50µs, 15µs
Voltage - Output (Max): 300V
Supplier Device Package: 6-SO, 4 Lead
на замовлення 8436 шт:
термін постачання 21-31 дні (днів)
| Кількість | Ціна без ПДВ |
|---|---|
| 6+ | 56.57 грн |
| 10+ | 37.91 грн |
| 100+ | 27.79 грн |
| 500+ | 21.84 грн |
| 1000+ | 20.46 грн |
| TLP387(D4-TPR,E |
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Виробник: Toshiba Semiconductor and Storage
Description: OPTOISOLATOR 5KV 1CH DARL 6-SO
Current - DC Forward (If) (Max): 50 mA
Number of Channels: 1
Rise / Fall Time (Typ): 40µs, 15µs
Turn On / Turn Off Time (Typ): 50µs, 15µs
Voltage - Output (Max): 300V
Supplier Device Package: 6-SO, 4 Lead
Vce Saturation (Max): 1V
Current Transfer Ratio (Min): 1000% @ 1mA
Voltage - Isolation: 5000Vrms
Current - Output / Channel: 150mA
Input Type: DC
Voltage - Forward (Vf) (Typ): 1.25V
Operating Temperature: -55°C ~ 110°C
Mounting Type: Surface Mount
Output Type: Darlington
Package / Case: 6-SOIC (0.295", 7.50mm Width), 4 Leads
Packaging: Tape & Reel (TR)
Description: OPTOISOLATOR 5KV 1CH DARL 6-SO
Current - DC Forward (If) (Max): 50 mA
Number of Channels: 1
Rise / Fall Time (Typ): 40µs, 15µs
Turn On / Turn Off Time (Typ): 50µs, 15µs
Voltage - Output (Max): 300V
Supplier Device Package: 6-SO, 4 Lead
Vce Saturation (Max): 1V
Current Transfer Ratio (Min): 1000% @ 1mA
Voltage - Isolation: 5000Vrms
Current - Output / Channel: 150mA
Input Type: DC
Voltage - Forward (Vf) (Typ): 1.25V
Operating Temperature: -55°C ~ 110°C
Mounting Type: Surface Mount
Output Type: Darlington
Package / Case: 6-SOIC (0.295", 7.50mm Width), 4 Leads
Packaging: Tape & Reel (TR)
на замовлення 3000 шт:
термін постачання 21-31 дні (днів)
| Кількість | Ціна без ПДВ |
|---|---|
| 3000+ | 20.66 грн |
| TLP387(D4-TPR,E |
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Виробник: Toshiba Semiconductor and Storage
Description: OPTOISOLATOR 5KV 1CH DARL 6-SO
Current - Output / Channel: 150mA
Input Type: DC
Voltage - Forward (Vf) (Typ): 1.25V
Operating Temperature: -55°C ~ 110°C
Mounting Type: Surface Mount
Output Type: Darlington
Package / Case: 6-SOIC (0.295", 7.50mm Width), 4 Leads
Packaging: Cut Tape (CT)
Current - DC Forward (If) (Max): 50 mA
Number of Channels: 1
Rise / Fall Time (Typ): 40µs, 15µs
Turn On / Turn Off Time (Typ): 50µs, 15µs
Voltage - Output (Max): 300V
Supplier Device Package: 6-SO, 4 Lead
Vce Saturation (Max): 1V
Current Transfer Ratio (Min): 1000% @ 1mA
Voltage - Isolation: 5000Vrms
Description: OPTOISOLATOR 5KV 1CH DARL 6-SO
Current - Output / Channel: 150mA
Input Type: DC
Voltage - Forward (Vf) (Typ): 1.25V
Operating Temperature: -55°C ~ 110°C
Mounting Type: Surface Mount
Output Type: Darlington
Package / Case: 6-SOIC (0.295", 7.50mm Width), 4 Leads
Packaging: Cut Tape (CT)
Current - DC Forward (If) (Max): 50 mA
Number of Channels: 1
Rise / Fall Time (Typ): 40µs, 15µs
Turn On / Turn Off Time (Typ): 50µs, 15µs
Voltage - Output (Max): 300V
Supplier Device Package: 6-SO, 4 Lead
Vce Saturation (Max): 1V
Current Transfer Ratio (Min): 1000% @ 1mA
Voltage - Isolation: 5000Vrms
на замовлення 4373 шт:
термін постачання 21-31 дні (днів)
| Кількість | Ціна без ПДВ |
|---|---|
| 6+ | 56.57 грн |
| 10+ | 37.91 грн |
| 100+ | 27.79 грн |
| 500+ | 21.84 грн |
| 1000+ | 20.46 грн |
| TLP387(D4,E |
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Виробник: Toshiba Semiconductor and Storage
Description: OPTOISOLATOR 5KV 1CH DARL 6-SO
Operating Temperature: -55°C ~ 110°C
Mounting Type: Surface Mount
Output Type: Darlington
Package / Case: 6-SOIC (0.295", 7.50mm Width), 4 Leads
Packaging: Tube
Current - DC Forward (If) (Max): 50 mA
Number of Channels: 1
Rise / Fall Time (Typ): 40µs, 15µs
Turn On / Turn Off Time (Typ): 50µs, 15µs
Voltage - Output (Max): 300V
Supplier Device Package: 6-SO, 4 Lead
Vce Saturation (Max): 1.2V
Current Transfer Ratio (Min): 1000% @ 1mA
Voltage - Isolation: 5000Vrms
Current - Output / Channel: 150mA
Input Type: DC
Voltage - Forward (Vf) (Typ): 1.25V
Description: OPTOISOLATOR 5KV 1CH DARL 6-SO
Operating Temperature: -55°C ~ 110°C
Mounting Type: Surface Mount
Output Type: Darlington
Package / Case: 6-SOIC (0.295", 7.50mm Width), 4 Leads
Packaging: Tube
Current - DC Forward (If) (Max): 50 mA
Number of Channels: 1
Rise / Fall Time (Typ): 40µs, 15µs
Turn On / Turn Off Time (Typ): 50µs, 15µs
Voltage - Output (Max): 300V
Supplier Device Package: 6-SO, 4 Lead
Vce Saturation (Max): 1.2V
Current Transfer Ratio (Min): 1000% @ 1mA
Voltage - Isolation: 5000Vrms
Current - Output / Channel: 150mA
Input Type: DC
Voltage - Forward (Vf) (Typ): 1.25V
на замовлення 195 шт:
термін постачання 21-31 дні (днів)
| Кількість | Ціна без ПДВ |
|---|---|
| 6+ | 56.57 грн |
| 10+ | 37.91 грн |
| 125+ | 27.05 грн |
| TK115U65Z5,RQ |
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Виробник: Toshiba Semiconductor and Storage
Description: N-CH MOSFET, 650 V, 0.115 @10V,
Packaging: Tape & Reel (TR)
Package / Case: 8-PowerSFN
Mounting Type: Surface Mount
Operating Temperature: 150°C
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 24A (Ta)
Rds On (Max) @ Id, Vgs: 115mOhm @ 12A, 10V
Power Dissipation (Max): 190W (Tc)
Vgs(th) (Max) @ Id: 4.5V @ 1.02mA
Supplier Device Package: TOLL
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±30V
Drain to Source Voltage (Vdss): 650 V
Gate Charge (Qg) (Max) @ Vgs: 42 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 2280 pF @ 300 V
Description: N-CH MOSFET, 650 V, 0.115 @10V,
Packaging: Tape & Reel (TR)
Package / Case: 8-PowerSFN
Mounting Type: Surface Mount
Operating Temperature: 150°C
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 24A (Ta)
Rds On (Max) @ Id, Vgs: 115mOhm @ 12A, 10V
Power Dissipation (Max): 190W (Tc)
Vgs(th) (Max) @ Id: 4.5V @ 1.02mA
Supplier Device Package: TOLL
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±30V
Drain to Source Voltage (Vdss): 650 V
Gate Charge (Qg) (Max) @ Vgs: 42 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 2280 pF @ 300 V
на замовлення 4000 шт:
термін постачання 21-31 дні (днів)
| Кількість | Ціна без ПДВ |
|---|---|
| 2000+ | 163.14 грн |
| TK115U65Z5,RQ |
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Виробник: Toshiba Semiconductor and Storage
Description: N-CH MOSFET, 650 V, 0.115 @10V,
Packaging: Cut Tape (CT)
Package / Case: 8-PowerSFN
Mounting Type: Surface Mount
Operating Temperature: 150°C
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 24A (Ta)
Rds On (Max) @ Id, Vgs: 115mOhm @ 12A, 10V
Power Dissipation (Max): 190W (Tc)
Vgs(th) (Max) @ Id: 4.5V @ 1.02mA
Supplier Device Package: TOLL
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±30V
Drain to Source Voltage (Vdss): 650 V
Gate Charge (Qg) (Max) @ Vgs: 42 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 2280 pF @ 300 V
Description: N-CH MOSFET, 650 V, 0.115 @10V,
Packaging: Cut Tape (CT)
Package / Case: 8-PowerSFN
Mounting Type: Surface Mount
Operating Temperature: 150°C
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 24A (Ta)
Rds On (Max) @ Id, Vgs: 115mOhm @ 12A, 10V
Power Dissipation (Max): 190W (Tc)
Vgs(th) (Max) @ Id: 4.5V @ 1.02mA
Supplier Device Package: TOLL
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±30V
Drain to Source Voltage (Vdss): 650 V
Gate Charge (Qg) (Max) @ Vgs: 42 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 2280 pF @ 300 V
на замовлення 4000 шт:
термін постачання 21-31 дні (днів)
| Кількість | Ціна без ПДВ |
|---|---|
| 1+ | 414.58 грн |
| 10+ | 267.66 грн |
| 100+ | 193.25 грн |
| 500+ | 180.45 грн |
| TK099N60Z1,S1F |
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Виробник: Toshiba Semiconductor and Storage
Description: N-CH MOSFET, 600 V, 0.099 @10V,
Packaging: Tube
Package / Case: TO-247-3
Mounting Type: Through Hole
Operating Temperature: 150°C
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 25A (Ta)
Rds On (Max) @ Id, Vgs: 99mOhm @ 8.1A, 10V
Power Dissipation (Max): 176W (Tc)
Vgs(th) (Max) @ Id: 4V @ 930µA
Supplier Device Package: TO-247
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±30V
Drain to Source Voltage (Vdss): 600 V
Gate Charge (Qg) (Max) @ Vgs: 36 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 2050 pF @ 300 V
Description: N-CH MOSFET, 600 V, 0.099 @10V,
Packaging: Tube
Package / Case: TO-247-3
Mounting Type: Through Hole
Operating Temperature: 150°C
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 25A (Ta)
Rds On (Max) @ Id, Vgs: 99mOhm @ 8.1A, 10V
Power Dissipation (Max): 176W (Tc)
Vgs(th) (Max) @ Id: 4V @ 930µA
Supplier Device Package: TO-247
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±30V
Drain to Source Voltage (Vdss): 600 V
Gate Charge (Qg) (Max) @ Vgs: 36 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 2050 pF @ 300 V
на замовлення 60 шт:
термін постачання 21-31 дні (днів)
| Кількість | Ціна без ПДВ |
|---|---|
| 1+ | 340.18 грн |
| 30+ | 184.31 грн |
| TK155U60Z1,RQ |
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Виробник: Toshiba Semiconductor and Storage
Description: N-CH MOSFET, 600 V, 0.155 @10V,
Packaging: Tape & Reel (TR)
Package / Case: 8-PowerSFN
Mounting Type: Surface Mount
Operating Temperature: 150°C
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 17A (Ta)
Rds On (Max) @ Id, Vgs: 155mOhm @ 5.4A, 10V
Power Dissipation (Max): 130W (Tc)
Vgs(th) (Max) @ Id: 4V @ 610µA
Supplier Device Package: TOLL
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±30V
Drain to Source Voltage (Vdss): 600 V
Gate Charge (Qg) (Max) @ Vgs: 24 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 1350 pF @ 300 V
Description: N-CH MOSFET, 600 V, 0.155 @10V,
Packaging: Tape & Reel (TR)
Package / Case: 8-PowerSFN
Mounting Type: Surface Mount
Operating Temperature: 150°C
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 17A (Ta)
Rds On (Max) @ Id, Vgs: 155mOhm @ 5.4A, 10V
Power Dissipation (Max): 130W (Tc)
Vgs(th) (Max) @ Id: 4V @ 610µA
Supplier Device Package: TOLL
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±30V
Drain to Source Voltage (Vdss): 600 V
Gate Charge (Qg) (Max) @ Vgs: 24 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 1350 pF @ 300 V
на замовлення 2000 шт:
термін постачання 21-31 дні (днів)
| Кількість | Ціна без ПДВ |
|---|---|
| 2000+ | 84.15 грн |
| TK155U60Z1,RQ |
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Виробник: Toshiba Semiconductor and Storage
Description: N-CH MOSFET, 600 V, 0.155 @10V,
Packaging: Cut Tape (CT)
Package / Case: 8-PowerSFN
Mounting Type: Surface Mount
Operating Temperature: 150°C
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 17A (Ta)
Rds On (Max) @ Id, Vgs: 155mOhm @ 5.4A, 10V
Power Dissipation (Max): 130W (Tc)
Vgs(th) (Max) @ Id: 4V @ 610µA
Supplier Device Package: TOLL
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±30V
Drain to Source Voltage (Vdss): 600 V
Gate Charge (Qg) (Max) @ Vgs: 24 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 1350 pF @ 300 V
Description: N-CH MOSFET, 600 V, 0.155 @10V,
Packaging: Cut Tape (CT)
Package / Case: 8-PowerSFN
Mounting Type: Surface Mount
Operating Temperature: 150°C
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 17A (Ta)
Rds On (Max) @ Id, Vgs: 155mOhm @ 5.4A, 10V
Power Dissipation (Max): 130W (Tc)
Vgs(th) (Max) @ Id: 4V @ 610µA
Supplier Device Package: TOLL
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±30V
Drain to Source Voltage (Vdss): 600 V
Gate Charge (Qg) (Max) @ Vgs: 24 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 1350 pF @ 300 V
на замовлення 3989 шт:
термін постачання 21-31 дні (днів)
| Кількість | Ціна без ПДВ |
|---|---|
| 2+ | 261.14 грн |
| 10+ | 164.24 грн |
| 100+ | 114.69 грн |
| 500+ | 87.90 грн |
| TK125U60Z1,RQ |
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Виробник: Toshiba Semiconductor and Storage
Description: N-CH MOSFET, 600 V, 0.125 @10V,
Packaging: Tape & Reel (TR)
Package / Case: 8-PowerSFN
Mounting Type: Surface Mount
Operating Temperature: 150°C
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 20A (Ta)
Rds On (Max) @ Id, Vgs: 125mOhm @ 6A, 10V
Power Dissipation (Max): 150W (Tc)
Vgs(th) (Max) @ Id: 4V @ 730µA
Supplier Device Package: TOLL
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±30V
Drain to Source Voltage (Vdss): 600 V
Gate Charge (Qg) (Max) @ Vgs: 28 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 1620 pF @ 300 V
Description: N-CH MOSFET, 600 V, 0.125 @10V,
Packaging: Tape & Reel (TR)
Package / Case: 8-PowerSFN
Mounting Type: Surface Mount
Operating Temperature: 150°C
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 20A (Ta)
Rds On (Max) @ Id, Vgs: 125mOhm @ 6A, 10V
Power Dissipation (Max): 150W (Tc)
Vgs(th) (Max) @ Id: 4V @ 730µA
Supplier Device Package: TOLL
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±30V
Drain to Source Voltage (Vdss): 600 V
Gate Charge (Qg) (Max) @ Vgs: 28 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 1620 pF @ 300 V
на замовлення 4000 шт:
термін постачання 21-31 дні (днів)
| Кількість | Ціна без ПДВ |
|---|---|
| 2000+ | 95.01 грн |
| 4000+ | 87.89 грн |
| TK125U60Z1,RQ |
![]() |
Виробник: Toshiba Semiconductor and Storage
Description: N-CH MOSFET, 600 V, 0.125 @10V,
Packaging: Cut Tape (CT)
Package / Case: 8-PowerSFN
Mounting Type: Surface Mount
Operating Temperature: 150°C
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 20A (Ta)
Rds On (Max) @ Id, Vgs: 125mOhm @ 6A, 10V
Power Dissipation (Max): 150W (Tc)
Vgs(th) (Max) @ Id: 4V @ 730µA
Supplier Device Package: TOLL
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±30V
Drain to Source Voltage (Vdss): 600 V
Gate Charge (Qg) (Max) @ Vgs: 28 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 1620 pF @ 300 V
Description: N-CH MOSFET, 600 V, 0.125 @10V,
Packaging: Cut Tape (CT)
Package / Case: 8-PowerSFN
Mounting Type: Surface Mount
Operating Temperature: 150°C
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 20A (Ta)
Rds On (Max) @ Id, Vgs: 125mOhm @ 6A, 10V
Power Dissipation (Max): 150W (Tc)
Vgs(th) (Max) @ Id: 4V @ 730µA
Supplier Device Package: TOLL
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±30V
Drain to Source Voltage (Vdss): 600 V
Gate Charge (Qg) (Max) @ Vgs: 28 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 1620 pF @ 300 V
на замовлення 4000 шт:
термін постачання 21-31 дні (днів)
| Кількість | Ціна без ПДВ |
|---|---|
| 2+ | 289.04 грн |
| 10+ | 182.75 грн |
| 100+ | 128.40 грн |
| 500+ | 100.96 грн |
| TK099U60Z1,RQ |
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Виробник: Toshiba Semiconductor and Storage
Description: N-CH MOSFET, 600 V, 0.099 @10V,
Technology: MOSFET (Metal Oxide)
Operating Temperature: 150°C
Mounting Type: Surface Mount
Package / Case: 8-PowerSFN
Packaging: Tape & Reel (TR)
Input Capacitance (Ciss) (Max) @ Vds: 2050 pF @ 300 V
Gate Charge (Qg) (Max) @ Vgs: 36 nC @ 10 V
Drain to Source Voltage (Vdss): 600 V
Vgs (Max): ±30V
Drive Voltage (Max Rds On, Min Rds On): 10V
Supplier Device Package: TOLL
Vgs(th) (Max) @ Id: 4V @ 930µA
Power Dissipation (Max): 176W (Tc)
Rds On (Max) @ Id, Vgs: 99mOhm @ 8.1A, 10V
Current - Continuous Drain (Id) @ 25°C: 25A (Ta)
FET Type: N-Channel
Description: N-CH MOSFET, 600 V, 0.099 @10V,
Technology: MOSFET (Metal Oxide)
Operating Temperature: 150°C
Mounting Type: Surface Mount
Package / Case: 8-PowerSFN
Packaging: Tape & Reel (TR)
Input Capacitance (Ciss) (Max) @ Vds: 2050 pF @ 300 V
Gate Charge (Qg) (Max) @ Vgs: 36 nC @ 10 V
Drain to Source Voltage (Vdss): 600 V
Vgs (Max): ±30V
Drive Voltage (Max Rds On, Min Rds On): 10V
Supplier Device Package: TOLL
Vgs(th) (Max) @ Id: 4V @ 930µA
Power Dissipation (Max): 176W (Tc)
Rds On (Max) @ Id, Vgs: 99mOhm @ 8.1A, 10V
Current - Continuous Drain (Id) @ 25°C: 25A (Ta)
FET Type: N-Channel
на замовлення 4000 шт:
термін постачання 21-31 дні (днів)
| Кількість | Ціна без ПДВ |
|---|---|
| 2000+ | 108.50 грн |
| 4000+ | 102.20 грн |
| TK099U60Z1,RQ |
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Виробник: Toshiba Semiconductor and Storage
Description: N-CH MOSFET, 600 V, 0.099 @10V,
Input Capacitance (Ciss) (Max) @ Vds: 2050 pF @ 300 V
Gate Charge (Qg) (Max) @ Vgs: 36 nC @ 10 V
Drain to Source Voltage (Vdss): 600 V
Vgs (Max): ±30V
Drive Voltage (Max Rds On, Min Rds On): 10V
Supplier Device Package: TOLL
Vgs(th) (Max) @ Id: 4V @ 930µA
Power Dissipation (Max): 176W (Tc)
Rds On (Max) @ Id, Vgs: 99mOhm @ 8.1A, 10V
Current - Continuous Drain (Id) @ 25°C: 25A (Ta)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: 150°C
Mounting Type: Surface Mount
Package / Case: 8-PowerSFN
Packaging: Cut Tape (CT)
Description: N-CH MOSFET, 600 V, 0.099 @10V,
Input Capacitance (Ciss) (Max) @ Vds: 2050 pF @ 300 V
Gate Charge (Qg) (Max) @ Vgs: 36 nC @ 10 V
Drain to Source Voltage (Vdss): 600 V
Vgs (Max): ±30V
Drive Voltage (Max Rds On, Min Rds On): 10V
Supplier Device Package: TOLL
Vgs(th) (Max) @ Id: 4V @ 930µA
Power Dissipation (Max): 176W (Tc)
Rds On (Max) @ Id, Vgs: 99mOhm @ 8.1A, 10V
Current - Continuous Drain (Id) @ 25°C: 25A (Ta)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: 150°C
Mounting Type: Surface Mount
Package / Case: 8-PowerSFN
Packaging: Cut Tape (CT)
на замовлення 4000 шт:
термін постачання 21-31 дні (днів)
| Кількість | Ціна без ПДВ |
|---|---|
| 1+ | 323.14 грн |
| 10+ | 205.36 грн |
| 100+ | 145.27 грн |
| 500+ | 117.39 грн |
| TK080U60Z1,RQ |
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Виробник: Toshiba Semiconductor and Storage
Description: N-CH MOSFET, 600 V, 0.08 @10V, T
Technology: MOSFET (Metal Oxide)
Operating Temperature: 150°C
Mounting Type: Surface Mount
Package / Case: 8-PowerSFN
Packaging: Tape & Reel (TR)
Input Capacitance (Ciss) (Max) @ Vds: 2510 pF @ 300 V
Gate Charge (Qg) (Max) @ Vgs: 43 nC @ 10 V
Drain to Source Voltage (Vdss): 600 V
Vgs (Max): ±30V
Drive Voltage (Max Rds On, Min Rds On): 10V
Supplier Device Package: TOLL
Vgs(th) (Max) @ Id: 4V @ 1.17mA
Power Dissipation (Max): 211W (Tc)
Rds On (Max) @ Id, Vgs: 80mOhm @ 10.3A, 10V
Current - Continuous Drain (Id) @ 25°C: 30A (Ta)
FET Type: N-Channel
Description: N-CH MOSFET, 600 V, 0.08 @10V, T
Technology: MOSFET (Metal Oxide)
Operating Temperature: 150°C
Mounting Type: Surface Mount
Package / Case: 8-PowerSFN
Packaging: Tape & Reel (TR)
Input Capacitance (Ciss) (Max) @ Vds: 2510 pF @ 300 V
Gate Charge (Qg) (Max) @ Vgs: 43 nC @ 10 V
Drain to Source Voltage (Vdss): 600 V
Vgs (Max): ±30V
Drive Voltage (Max Rds On, Min Rds On): 10V
Supplier Device Package: TOLL
Vgs(th) (Max) @ Id: 4V @ 1.17mA
Power Dissipation (Max): 211W (Tc)
Rds On (Max) @ Id, Vgs: 80mOhm @ 10.3A, 10V
Current - Continuous Drain (Id) @ 25°C: 30A (Ta)
FET Type: N-Channel
на замовлення 4000 шт:
термін постачання 21-31 дні (днів)
| Кількість | Ціна без ПДВ |
|---|---|
| 2000+ | 132.95 грн |
| TK080U60Z1,RQ |
![]() |
Виробник: Toshiba Semiconductor and Storage
Description: N-CH MOSFET, 600 V, 0.08 @10V, T
Input Capacitance (Ciss) (Max) @ Vds: 2510 pF @ 300 V
Gate Charge (Qg) (Max) @ Vgs: 43 nC @ 10 V
Drain to Source Voltage (Vdss): 600 V
Vgs (Max): ±30V
Drive Voltage (Max Rds On, Min Rds On): 10V
Supplier Device Package: TOLL
Vgs(th) (Max) @ Id: 4V @ 1.17mA
Power Dissipation (Max): 211W (Tc)
Rds On (Max) @ Id, Vgs: 80mOhm @ 10.3A, 10V
Current - Continuous Drain (Id) @ 25°C: 30A (Ta)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: 150°C
Mounting Type: Surface Mount
Package / Case: 8-PowerSFN
Packaging: Cut Tape (CT)
Description: N-CH MOSFET, 600 V, 0.08 @10V, T
Input Capacitance (Ciss) (Max) @ Vds: 2510 pF @ 300 V
Gate Charge (Qg) (Max) @ Vgs: 43 nC @ 10 V
Drain to Source Voltage (Vdss): 600 V
Vgs (Max): ±30V
Drive Voltage (Max Rds On, Min Rds On): 10V
Supplier Device Package: TOLL
Vgs(th) (Max) @ Id: 4V @ 1.17mA
Power Dissipation (Max): 211W (Tc)
Rds On (Max) @ Id, Vgs: 80mOhm @ 10.3A, 10V
Current - Continuous Drain (Id) @ 25°C: 30A (Ta)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: 150°C
Mounting Type: Surface Mount
Package / Case: 8-PowerSFN
Packaging: Cut Tape (CT)
на замовлення 4000 шт:
термін постачання 21-31 дні (днів)
| Кількість | Ціна без ПДВ |
|---|---|
| 1+ | 382.03 грн |
| 10+ | 244.76 грн |
| 100+ | 174.91 грн |
| 500+ | 147.07 грн |
| CRZ18(TE85L,Q,M) |
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Виробник: Toshiba Semiconductor and Storage
Description: DIODE ZENER 18V 700MW SFLAT
Tolerance: ±10%
Packaging: Tape & Reel (TR)
Package / Case: SOD-123F
Mounting Type: Surface Mount
Operating Temperature: -40°C ~ 150°C (TJ)
Voltage - Zener (Nom) (Vz): 18 V
Impedance (Max) (Zzt): 30 Ohms
Supplier Device Package: S-FLAT (1.6x3.5)
Power - Max: 700 mW
Voltage - Forward (Vf) (Max) @ If: 1 V @ 200 mA
Current - Reverse Leakage @ Vr: 10 µA @ 13 V
Description: DIODE ZENER 18V 700MW SFLAT
Tolerance: ±10%
Packaging: Tape & Reel (TR)
Package / Case: SOD-123F
Mounting Type: Surface Mount
Operating Temperature: -40°C ~ 150°C (TJ)
Voltage - Zener (Nom) (Vz): 18 V
Impedance (Max) (Zzt): 30 Ohms
Supplier Device Package: S-FLAT (1.6x3.5)
Power - Max: 700 mW
Voltage - Forward (Vf) (Max) @ If: 1 V @ 200 mA
Current - Reverse Leakage @ Vr: 10 µA @ 13 V
на замовлення 3000 шт:
термін постачання 21-31 дні (днів)
| Кількість | Ціна без ПДВ |
|---|---|
| 3000+ | 11.48 грн |
| CRZ18(TE85L,Q,M) |
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Виробник: Toshiba Semiconductor and Storage
Description: DIODE ZENER 18V 700MW SFLAT
Tolerance: ±10%
Packaging: Cut Tape (CT)
Package / Case: SOD-123F
Mounting Type: Surface Mount
Operating Temperature: -40°C ~ 150°C (TJ)
Voltage - Zener (Nom) (Vz): 18 V
Impedance (Max) (Zzt): 30 Ohms
Supplier Device Package: S-FLAT (1.6x3.5)
Power - Max: 700 mW
Voltage - Forward (Vf) (Max) @ If: 1 V @ 200 mA
Current - Reverse Leakage @ Vr: 10 µA @ 13 V
Description: DIODE ZENER 18V 700MW SFLAT
Tolerance: ±10%
Packaging: Cut Tape (CT)
Package / Case: SOD-123F
Mounting Type: Surface Mount
Operating Temperature: -40°C ~ 150°C (TJ)
Voltage - Zener (Nom) (Vz): 18 V
Impedance (Max) (Zzt): 30 Ohms
Supplier Device Package: S-FLAT (1.6x3.5)
Power - Max: 700 mW
Voltage - Forward (Vf) (Max) @ If: 1 V @ 200 mA
Current - Reverse Leakage @ Vr: 10 µA @ 13 V
на замовлення 5992 шт:
термін постачання 21-31 дні (днів)
| Кількість | Ціна без ПДВ |
|---|---|
| 7+ | 50.37 грн |
| 10+ | 30.07 грн |
| 100+ | 19.39 грн |
| 500+ | 13.87 грн |
| 1000+ | 12.47 грн |
| CRS05(TE85L,Q,M) |
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Виробник: Toshiba Semiconductor and Storage
Description: DIODE SCHOTTKY 30V 1A SFLAT
Packaging: Cut Tape (CT)
Package / Case: SOD-123F
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Technology: Schottky
Current - Average Rectified (Io): 1A
Supplier Device Package: S-FLAT (1.6x3.5)
Operating Temperature - Junction: -40°C ~ 150°C
Voltage - DC Reverse (Vr) (Max): 30 V
Voltage - Forward (Vf) (Max) @ If: 450 mV @ 1 A
Current - Reverse Leakage @ Vr: 200 µA @ 30 V
Description: DIODE SCHOTTKY 30V 1A SFLAT
Packaging: Cut Tape (CT)
Package / Case: SOD-123F
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Technology: Schottky
Current - Average Rectified (Io): 1A
Supplier Device Package: S-FLAT (1.6x3.5)
Operating Temperature - Junction: -40°C ~ 150°C
Voltage - DC Reverse (Vr) (Max): 30 V
Voltage - Forward (Vf) (Max) @ If: 450 mV @ 1 A
Current - Reverse Leakage @ Vr: 200 µA @ 30 V
на замовлення 2227 шт:
термін постачання 21-31 дні (днів)
| Кількість | Ціна без ПДВ |
|---|---|
| 9+ | 35.65 грн |
| 13+ | 23.28 грн |
| 100+ | 15.12 грн |
| 500+ | 10.71 грн |
| 1000+ | 9.59 грн |
| TC7MBL3125CFK(EL) |
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Виробник: Toshiba Semiconductor and Storage
Description: IC BUS SWITCH 4 X 1:1 14-VSSOP
Packaging: Tape & Reel (TR)
Package / Case: 14-VFSOP (0.118", 3.00mm Width)
Mounting Type: Surface Mount
Circuit: 4 x 1:1
Type: Bus Switch
Operating Temperature: -40°C ~ 85°C
Voltage - Supply: 1.65V ~ 3.6V
Independent Circuits: 1
Voltage Supply Source: Single Supply
Supplier Device Package: 14-VSSOP
Description: IC BUS SWITCH 4 X 1:1 14-VSSOP
Packaging: Tape & Reel (TR)
Package / Case: 14-VFSOP (0.118", 3.00mm Width)
Mounting Type: Surface Mount
Circuit: 4 x 1:1
Type: Bus Switch
Operating Temperature: -40°C ~ 85°C
Voltage - Supply: 1.65V ~ 3.6V
Independent Circuits: 1
Voltage Supply Source: Single Supply
Supplier Device Package: 14-VSSOP
на замовлення 2500 шт:
термін постачання 21-31 дні (днів)
| Кількість | Ціна без ПДВ |
|---|---|
| 2500+ | 21.40 грн |
| TC7MBL3125CFK(EL) |
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Виробник: Toshiba Semiconductor and Storage
Description: IC BUS SWITCH 4 X 1:1 14-VSSOP
Packaging: Cut Tape (CT)
Package / Case: 14-VFSOP (0.118", 3.00mm Width)
Mounting Type: Surface Mount
Circuit: 4 x 1:1
Type: Bus Switch
Operating Temperature: -40°C ~ 85°C
Voltage - Supply: 1.65V ~ 3.6V
Independent Circuits: 1
Voltage Supply Source: Single Supply
Supplier Device Package: 14-VSSOP
Description: IC BUS SWITCH 4 X 1:1 14-VSSOP
Packaging: Cut Tape (CT)
Package / Case: 14-VFSOP (0.118", 3.00mm Width)
Mounting Type: Surface Mount
Circuit: 4 x 1:1
Type: Bus Switch
Operating Temperature: -40°C ~ 85°C
Voltage - Supply: 1.65V ~ 3.6V
Independent Circuits: 1
Voltage Supply Source: Single Supply
Supplier Device Package: 14-VSSOP
на замовлення 7314 шт:
термін постачання 21-31 дні (днів)
| Кількість | Ціна без ПДВ |
|---|---|
| 7+ | 46.49 грн |
| 10+ | 31.86 грн |
| 25+ | 28.65 грн |
| 100+ | 23.55 грн |
| 250+ | 21.94 грн |
| 500+ | 20.98 грн |
| 1000+ | 20.33 грн |
| TK20J50D(F) |
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Виробник: Toshiba Semiconductor and Storage
Description: MOSFET N-CH 500V 20A TO3P
Packaging: Tube
Package / Case: TO-3P-3, SC-65-3
Mounting Type: Through Hole
Operating Temperature: 150°C
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 20A
Rds On (Max) @ Id, Vgs: 270mOhm @ 10A, 10V
Power Dissipation (Max): 280W
Vgs(th) (Max) @ Id: 4V @ 1mA
Supplier Device Package: TO-3P(N)
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±30V
Drain to Source Voltage (Vdss): 500 V
Gate Charge (Qg) (Max) @ Vgs: 45 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 2600 pF @ 25 V
Description: MOSFET N-CH 500V 20A TO3P
Packaging: Tube
Package / Case: TO-3P-3, SC-65-3
Mounting Type: Through Hole
Operating Temperature: 150°C
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 20A
Rds On (Max) @ Id, Vgs: 270mOhm @ 10A, 10V
Power Dissipation (Max): 280W
Vgs(th) (Max) @ Id: 4V @ 1mA
Supplier Device Package: TO-3P(N)
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±30V
Drain to Source Voltage (Vdss): 500 V
Gate Charge (Qg) (Max) @ Vgs: 45 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 2600 pF @ 25 V
товару немає в наявності
В кошику
од. на суму грн.
| TCR2LN21,LF(SE |
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Виробник: Toshiba Semiconductor and Storage
Description: IC REG LINEAR 2.1V 200MA 4-SDFN
Packaging: Tape & Reel (TR)
Package / Case: 4-XFDFN Exposed Pad
Output Type: Fixed
Mounting Type: Surface Mount
Current - Output: 200mA
Operating Temperature: -40°C ~ 85°C (TJ)
Output Configuration: Positive
Current - Quiescent (Iq): 2 µA
Voltage - Input (Max): 5.5V
Number of Regulators: 1
Supplier Device Package: 4-SDFN (0.8x0.8)
Voltage - Output (Min/Fixed): 2.1V
Control Features: Enable
Voltage Dropout (Max): 0.54V @ 150mA
Protection Features: Over Current
Description: IC REG LINEAR 2.1V 200MA 4-SDFN
Packaging: Tape & Reel (TR)
Package / Case: 4-XFDFN Exposed Pad
Output Type: Fixed
Mounting Type: Surface Mount
Current - Output: 200mA
Operating Temperature: -40°C ~ 85°C (TJ)
Output Configuration: Positive
Current - Quiescent (Iq): 2 µA
Voltage - Input (Max): 5.5V
Number of Regulators: 1
Supplier Device Package: 4-SDFN (0.8x0.8)
Voltage - Output (Min/Fixed): 2.1V
Control Features: Enable
Voltage Dropout (Max): 0.54V @ 150mA
Protection Features: Over Current
товару немає в наявності
Мінімальне замовлення: 10000 шт
В кошику
од. на суму грн.
| TCR2LN21,LF(SE |
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Виробник: Toshiba Semiconductor and Storage
Description: IC REG LINEAR 2.1V 200MA 4-SDFN
Packaging: Cut Tape (CT)
Package / Case: 4-XFDFN Exposed Pad
Output Type: Fixed
Mounting Type: Surface Mount
Current - Output: 200mA
Operating Temperature: -40°C ~ 85°C (TJ)
Output Configuration: Positive
Current - Quiescent (Iq): 2 µA
Voltage - Input (Max): 5.5V
Number of Regulators: 1
Supplier Device Package: 4-SDFN (0.8x0.8)
Voltage - Output (Min/Fixed): 2.1V
Control Features: Enable
Voltage Dropout (Max): 0.54V @ 150mA
Protection Features: Over Current
Description: IC REG LINEAR 2.1V 200MA 4-SDFN
Packaging: Cut Tape (CT)
Package / Case: 4-XFDFN Exposed Pad
Output Type: Fixed
Mounting Type: Surface Mount
Current - Output: 200mA
Operating Temperature: -40°C ~ 85°C (TJ)
Output Configuration: Positive
Current - Quiescent (Iq): 2 µA
Voltage - Input (Max): 5.5V
Number of Regulators: 1
Supplier Device Package: 4-SDFN (0.8x0.8)
Voltage - Output (Min/Fixed): 2.1V
Control Features: Enable
Voltage Dropout (Max): 0.54V @ 150mA
Protection Features: Over Current
на замовлення 8179 шт:
термін постачання 21-31 дні (днів)
| Кількість | Ціна без ПДВ |
|---|---|
| 27+ | 11.62 грн |
| 40+ | 7.61 грн |
| 45+ | 6.72 грн |
| 100+ | 5.36 грн |
| 250+ | 4.91 грн |
| 500+ | 4.64 грн |
| 1000+ | 4.34 грн |
| 2500+ | 4.11 грн |
| 5000+ | 3.97 грн |
| 74LVC2T45FK,LF(CT |
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Виробник: Toshiba Semiconductor and Storage
Description: IC XLTR VL BIDIR US8
Packaging: Tape & Reel (TR)
Package / Case: 8-VFSOP (0.091", 2.30mm Width)
Output Type: Tri-State
Mounting Type: Surface Mount
Operating Temperature: -40°C ~ 125°C (TA)
Supplier Device Package: US8
Channel Type: Bidirectional
Translator Type: Voltage Level
Channels per Circuit: 2
Voltage - VCCA: 1.65 V ~ 5.5 V
Voltage - VCCB: 1.65 V ~ 5.5 V
Number of Circuits: 1
Description: IC XLTR VL BIDIR US8
Packaging: Tape & Reel (TR)
Package / Case: 8-VFSOP (0.091", 2.30mm Width)
Output Type: Tri-State
Mounting Type: Surface Mount
Operating Temperature: -40°C ~ 125°C (TA)
Supplier Device Package: US8
Channel Type: Bidirectional
Translator Type: Voltage Level
Channels per Circuit: 2
Voltage - VCCA: 1.65 V ~ 5.5 V
Voltage - VCCB: 1.65 V ~ 5.5 V
Number of Circuits: 1
товару немає в наявності
Мінімальне замовлення: 3000 шт
В кошику
од. на суму грн.
| TB67S149FG,EL |
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Виробник: Toshiba Semiconductor and Storage
Description: IC MOTOR DRIVER UNIPOLAR 28HSSOP
Packaging: Tape & Reel (TR)
Package / Case: 28-SOP (0.295", 7.50mm Width) + 2 Heat Tabs
Mounting Type: Surface Mount
Function: Driver - Fully Integrated, Control and Power Stage
Current - Output: 3A
Interface: Parallel
Operating Temperature: -20°C ~ 85°C (TA)
Output Configuration: Half Bridge (2)
Voltage - Supply: 4.75V ~ 5.25V
Applications: General Purpose
Technology: Power MOSFET
Voltage - Load: 10V ~ 40V
Supplier Device Package: 28-HSSOP
Motor Type - Stepper: Unipolar
Step Resolution: 1 ~ 1/32
Description: IC MOTOR DRIVER UNIPOLAR 28HSSOP
Packaging: Tape & Reel (TR)
Package / Case: 28-SOP (0.295", 7.50mm Width) + 2 Heat Tabs
Mounting Type: Surface Mount
Function: Driver - Fully Integrated, Control and Power Stage
Current - Output: 3A
Interface: Parallel
Operating Temperature: -20°C ~ 85°C (TA)
Output Configuration: Half Bridge (2)
Voltage - Supply: 4.75V ~ 5.25V
Applications: General Purpose
Technology: Power MOSFET
Voltage - Load: 10V ~ 40V
Supplier Device Package: 28-HSSOP
Motor Type - Stepper: Unipolar
Step Resolution: 1 ~ 1/32
на замовлення 2000 шт:
термін постачання 21-31 дні (днів)
| Кількість | Ціна без ПДВ |
|---|---|
| 1000+ | 127.50 грн |
| 2000+ | 119.83 грн |
| TB67S149FG,EL |
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Виробник: Toshiba Semiconductor and Storage
Description: IC MOTOR DRIVER UNIPOLAR 28HSSOP
Packaging: Cut Tape (CT)
Package / Case: 28-SOP (0.295", 7.50mm Width) + 2 Heat Tabs
Mounting Type: Surface Mount
Function: Driver - Fully Integrated, Control and Power Stage
Current - Output: 3A
Interface: Parallel
Operating Temperature: -20°C ~ 85°C (TA)
Output Configuration: Half Bridge (2)
Voltage - Supply: 4.75V ~ 5.25V
Applications: General Purpose
Technology: Power MOSFET
Voltage - Load: 10V ~ 40V
Supplier Device Package: 28-HSSOP
Motor Type - Stepper: Unipolar
Step Resolution: 1 ~ 1/32
Description: IC MOTOR DRIVER UNIPOLAR 28HSSOP
Packaging: Cut Tape (CT)
Package / Case: 28-SOP (0.295", 7.50mm Width) + 2 Heat Tabs
Mounting Type: Surface Mount
Function: Driver - Fully Integrated, Control and Power Stage
Current - Output: 3A
Interface: Parallel
Operating Temperature: -20°C ~ 85°C (TA)
Output Configuration: Half Bridge (2)
Voltage - Supply: 4.75V ~ 5.25V
Applications: General Purpose
Technology: Power MOSFET
Voltage - Load: 10V ~ 40V
Supplier Device Package: 28-HSSOP
Motor Type - Stepper: Unipolar
Step Resolution: 1 ~ 1/32
на замовлення 3362 шт:
термін постачання 21-31 дні (днів)
| Кількість | Ціна без ПДВ |
|---|---|
| 2+ | 230.15 грн |
| 10+ | 166.78 грн |
| 25+ | 153.03 грн |
| 100+ | 129.42 грн |
| 250+ | 122.65 грн |
| 500+ | 118.58 грн |
| TB67S209FTG,EL |
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Виробник: Toshiba Semiconductor and Storage
Description: STEPPER MOTOR DRIVER IC, 50V/4.0
Packaging: Tape & Reel (TR)
Package / Case: 48-WFQFN Exposed Pad
Mounting Type: Surface Mount
Function: Driver - Fully Integrated, Control and Power Stage
Current - Output: 3A
Interface: Parallel
Operating Temperature: -20°C ~ 85°C
Output Configuration: Half Bridge (4)
Voltage - Supply: 4.75V ~ 5.25V
Applications: General Purpose
Technology: NMOS, PMOS
Voltage - Load: 10V ~ 47V
Supplier Device Package: 48-WQFN (7x7)
Motor Type - Stepper: Bipolar
Motor Type - AC, DC: Brushed DC
Step Resolution: 1, 1/2, 1/4, 1/8, 1/16, 1/32
Description: STEPPER MOTOR DRIVER IC, 50V/4.0
Packaging: Tape & Reel (TR)
Package / Case: 48-WFQFN Exposed Pad
Mounting Type: Surface Mount
Function: Driver - Fully Integrated, Control and Power Stage
Current - Output: 3A
Interface: Parallel
Operating Temperature: -20°C ~ 85°C
Output Configuration: Half Bridge (4)
Voltage - Supply: 4.75V ~ 5.25V
Applications: General Purpose
Technology: NMOS, PMOS
Voltage - Load: 10V ~ 47V
Supplier Device Package: 48-WQFN (7x7)
Motor Type - Stepper: Bipolar
Motor Type - AC, DC: Brushed DC
Step Resolution: 1, 1/2, 1/4, 1/8, 1/16, 1/32
на замовлення 4000 шт:
термін постачання 21-31 дні (днів)
| Кількість | Ціна без ПДВ |
|---|---|
| 4000+ | 109.96 грн |
| TB67S209FTG,EL |
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Виробник: Toshiba Semiconductor and Storage
Description: STEPPER MOTOR DRIVER IC, 50V/4.0
Packaging: Cut Tape (CT)
Package / Case: 48-WFQFN Exposed Pad
Mounting Type: Surface Mount
Function: Driver - Fully Integrated, Control and Power Stage
Current - Output: 3A
Interface: Parallel
Operating Temperature: -20°C ~ 85°C
Output Configuration: Half Bridge (4)
Voltage - Supply: 4.75V ~ 5.25V
Applications: General Purpose
Technology: NMOS, PMOS
Voltage - Load: 10V ~ 47V
Supplier Device Package: 48-WQFN (7x7)
Motor Type - Stepper: Bipolar
Motor Type - AC, DC: Brushed DC
Step Resolution: 1, 1/2, 1/4, 1/8, 1/16, 1/32
Description: STEPPER MOTOR DRIVER IC, 50V/4.0
Packaging: Cut Tape (CT)
Package / Case: 48-WFQFN Exposed Pad
Mounting Type: Surface Mount
Function: Driver - Fully Integrated, Control and Power Stage
Current - Output: 3A
Interface: Parallel
Operating Temperature: -20°C ~ 85°C
Output Configuration: Half Bridge (4)
Voltage - Supply: 4.75V ~ 5.25V
Applications: General Purpose
Technology: NMOS, PMOS
Voltage - Load: 10V ~ 47V
Supplier Device Package: 48-WQFN (7x7)
Motor Type - Stepper: Bipolar
Motor Type - AC, DC: Brushed DC
Step Resolution: 1, 1/2, 1/4, 1/8, 1/16, 1/32
на замовлення 4000 шт:
термін постачання 21-31 дні (днів)
| Кількість | Ціна без ПДВ |
|---|---|
| 2+ | 209.23 грн |
| 10+ | 151.26 грн |
| 25+ | 138.65 грн |
| 100+ | 117.05 грн |
| 250+ | 110.84 грн |
| 500+ | 107.09 грн |
| 1000+ | 102.29 грн |
| TB67S579FTG(O,EL) |
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Виробник: Toshiba Semiconductor and Storage
Description: 2.0A/40V STEPPING MOTOR DRIVER I
Packaging: Tape & Reel (TR)
Package / Case: 48-VFQFN Exposed Pad
Mounting Type: Surface Mount, Wettable Flank
Function: Driver - Fully Integrated, Control and Power Stage
Interface: PWM
Operating Temperature: -40°C ~ 85°C
Output Configuration: Half Bridge (4)
Voltage - Supply: 2V ~ 5.5V
Applications: General Purpose
Technology: DMOS
Voltage - Load: 4.5V ~ 34V
Supplier Device Package: 48-VQFN (7x7)
Motor Type - Stepper: Bipolar
Motor Type - AC, DC: Brushless DC (BLDC)
Step Resolution: 1, 1/2, 1/4, 1/8, 1/16, 1/32
Description: 2.0A/40V STEPPING MOTOR DRIVER I
Packaging: Tape & Reel (TR)
Package / Case: 48-VFQFN Exposed Pad
Mounting Type: Surface Mount, Wettable Flank
Function: Driver - Fully Integrated, Control and Power Stage
Interface: PWM
Operating Temperature: -40°C ~ 85°C
Output Configuration: Half Bridge (4)
Voltage - Supply: 2V ~ 5.5V
Applications: General Purpose
Technology: DMOS
Voltage - Load: 4.5V ~ 34V
Supplier Device Package: 48-VQFN (7x7)
Motor Type - Stepper: Bipolar
Motor Type - AC, DC: Brushless DC (BLDC)
Step Resolution: 1, 1/2, 1/4, 1/8, 1/16, 1/32
товару немає в наявності
Мінімальне замовлення: 4000 шт
В кошику
од. на суму грн.
| TB67S579FTG(O,EL) |
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Виробник: Toshiba Semiconductor and Storage
Description: 2.0A/40V STEPPING MOTOR DRIVER I
Packaging: Cut Tape (CT)
Package / Case: 48-VFQFN Exposed Pad
Mounting Type: Surface Mount, Wettable Flank
Function: Driver - Fully Integrated, Control and Power Stage
Interface: PWM
Operating Temperature: -40°C ~ 85°C
Output Configuration: Half Bridge (4)
Voltage - Supply: 2V ~ 5.5V
Applications: General Purpose
Technology: DMOS
Voltage - Load: 4.5V ~ 34V
Supplier Device Package: 48-VQFN (7x7)
Motor Type - Stepper: Bipolar
Motor Type - AC, DC: Brushless DC (BLDC)
Step Resolution: 1, 1/2, 1/4, 1/8, 1/16, 1/32
Description: 2.0A/40V STEPPING MOTOR DRIVER I
Packaging: Cut Tape (CT)
Package / Case: 48-VFQFN Exposed Pad
Mounting Type: Surface Mount, Wettable Flank
Function: Driver - Fully Integrated, Control and Power Stage
Interface: PWM
Operating Temperature: -40°C ~ 85°C
Output Configuration: Half Bridge (4)
Voltage - Supply: 2V ~ 5.5V
Applications: General Purpose
Technology: DMOS
Voltage - Load: 4.5V ~ 34V
Supplier Device Package: 48-VQFN (7x7)
Motor Type - Stepper: Bipolar
Motor Type - AC, DC: Brushless DC (BLDC)
Step Resolution: 1, 1/2, 1/4, 1/8, 1/16, 1/32
на замовлення 3422 шт:
термін постачання 21-31 дні (днів)
| Кількість | Ціна без ПДВ |
|---|---|
| 3+ | 151.11 грн |
| 10+ | 107.45 грн |
| 25+ | 98.02 грн |
| 100+ | 82.22 грн |
| 250+ | 77.56 грн |
| 500+ | 75.13 грн |
| TB67S559FTG(O,EL) |
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Виробник: Toshiba Semiconductor and Storage
Description: STEPPER MOTOR DRIVER IC, 50V/3.0
Packaging: Tape & Reel (TR)
Package / Case: 32-VFQFN Exposed Pad
Mounting Type: Surface Mount
Function: Driver - Fully Integrated, Control and Power Stage
Current - Output: 3A
Interface: Parallel, PWM
Operating Temperature: -40°C ~ 85°C
Output Configuration: Half Bridge (4)
Voltage - Supply: 8.2V ~ 44V
Applications: General Purpose
Technology: DMOS
Voltage - Load: 8.2V ~ 44V
Supplier Device Package: 32-VQFN (5x5)
Motor Type - Stepper: Bipolar
Motor Type - AC, DC: Brushless DC (BLDC)
Step Resolution: 1, 1/2, 1/4, 1/8, 1/16, 1/32
Description: STEPPER MOTOR DRIVER IC, 50V/3.0
Packaging: Tape & Reel (TR)
Package / Case: 32-VFQFN Exposed Pad
Mounting Type: Surface Mount
Function: Driver - Fully Integrated, Control and Power Stage
Current - Output: 3A
Interface: Parallel, PWM
Operating Temperature: -40°C ~ 85°C
Output Configuration: Half Bridge (4)
Voltage - Supply: 8.2V ~ 44V
Applications: General Purpose
Technology: DMOS
Voltage - Load: 8.2V ~ 44V
Supplier Device Package: 32-VQFN (5x5)
Motor Type - Stepper: Bipolar
Motor Type - AC, DC: Brushless DC (BLDC)
Step Resolution: 1, 1/2, 1/4, 1/8, 1/16, 1/32
товару немає в наявності
Мінімальне замовлення: 4000 шт
В кошику
од. на суму грн.
| TB67S559FTG(O,EL) |
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Виробник: Toshiba Semiconductor and Storage
Description: STEPPER MOTOR DRIVER IC, 50V/3.0
Packaging: Cut Tape (CT)
Package / Case: 32-VFQFN Exposed Pad
Mounting Type: Surface Mount
Function: Driver - Fully Integrated, Control and Power Stage
Current - Output: 3A
Interface: Parallel, PWM
Operating Temperature: -40°C ~ 85°C
Output Configuration: Half Bridge (4)
Voltage - Supply: 8.2V ~ 44V
Applications: General Purpose
Technology: DMOS
Voltage - Load: 8.2V ~ 44V
Supplier Device Package: 32-VQFN (5x5)
Motor Type - Stepper: Bipolar
Motor Type - AC, DC: Brushless DC (BLDC)
Step Resolution: 1, 1/2, 1/4, 1/8, 1/16, 1/32
Description: STEPPER MOTOR DRIVER IC, 50V/3.0
Packaging: Cut Tape (CT)
Package / Case: 32-VFQFN Exposed Pad
Mounting Type: Surface Mount
Function: Driver - Fully Integrated, Control and Power Stage
Current - Output: 3A
Interface: Parallel, PWM
Operating Temperature: -40°C ~ 85°C
Output Configuration: Half Bridge (4)
Voltage - Supply: 8.2V ~ 44V
Applications: General Purpose
Technology: DMOS
Voltage - Load: 8.2V ~ 44V
Supplier Device Package: 32-VQFN (5x5)
Motor Type - Stepper: Bipolar
Motor Type - AC, DC: Brushless DC (BLDC)
Step Resolution: 1, 1/2, 1/4, 1/8, 1/16, 1/32
на замовлення 3494 шт:
термін постачання 21-31 дні (днів)
| Кількість | Ціна без ПДВ |
|---|---|
| 2+ | 164.28 грн |
| 10+ | 117.23 грн |
| 25+ | 107.16 грн |
| 100+ | 90.09 грн |
| 250+ | 85.10 грн |
| 500+ | 82.09 грн |
| 1000+ | 78.31 грн |
| CUZ75V,H3F |
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Виробник: Toshiba Semiconductor and Storage
Description: 75 V ZENER DIODE, SOD-323 SOD-32
Capacitance @ Frequency: 24pF @ 1MHz
Applications: General Purpose
Operating Temperature: 150°C (TJ)
Type: Zener
Mounting Type: Surface Mount
Package / Case: SC-76, SOD-323
Packaging: Tape & Reel (TR)
Power Line Protection: No
Power - Peak Pulse: 620W
Voltage - Clamping (Max) @ Ipp: 112V
Voltage - Breakdown (Min): 70V
Unidirectional Channels: 1
Supplier Device Package: USC
Voltage - Reverse Standoff (Typ): 66V (Max)
Current - Peak Pulse (10/1000µs): 5A (8/20µs)
Description: 75 V ZENER DIODE, SOD-323 SOD-32
Capacitance @ Frequency: 24pF @ 1MHz
Applications: General Purpose
Operating Temperature: 150°C (TJ)
Type: Zener
Mounting Type: Surface Mount
Package / Case: SC-76, SOD-323
Packaging: Tape & Reel (TR)
Power Line Protection: No
Power - Peak Pulse: 620W
Voltage - Clamping (Max) @ Ipp: 112V
Voltage - Breakdown (Min): 70V
Unidirectional Channels: 1
Supplier Device Package: USC
Voltage - Reverse Standoff (Typ): 66V (Max)
Current - Peak Pulse (10/1000µs): 5A (8/20µs)
товару немає в наявності
Мінімальне замовлення: 3000 шт
В кошику
од. на суму грн.
| CUZ75V,H3F |
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Виробник: Toshiba Semiconductor and Storage
Description: 75 V ZENER DIODE, SOD-323 SOD-32
Power Line Protection: No
Power - Peak Pulse: 620W
Voltage - Clamping (Max) @ Ipp: 112V
Voltage - Breakdown (Min): 70V
Unidirectional Channels: 1
Supplier Device Package: USC
Voltage - Reverse Standoff (Typ): 66V (Max)
Current - Peak Pulse (10/1000µs): 5A (8/20µs)
Capacitance @ Frequency: 24pF @ 1MHz
Applications: General Purpose
Operating Temperature: 150°C (TJ)
Type: Zener
Mounting Type: Surface Mount
Package / Case: SC-76, SOD-323
Packaging: Cut Tape (CT)
Description: 75 V ZENER DIODE, SOD-323 SOD-32
Power Line Protection: No
Power - Peak Pulse: 620W
Voltage - Clamping (Max) @ Ipp: 112V
Voltage - Breakdown (Min): 70V
Unidirectional Channels: 1
Supplier Device Package: USC
Voltage - Reverse Standoff (Typ): 66V (Max)
Current - Peak Pulse (10/1000µs): 5A (8/20µs)
Capacitance @ Frequency: 24pF @ 1MHz
Applications: General Purpose
Operating Temperature: 150°C (TJ)
Type: Zener
Mounting Type: Surface Mount
Package / Case: SC-76, SOD-323
Packaging: Cut Tape (CT)
на замовлення 2740 шт:
термін постачання 21-31 дні (днів)
| Кількість | Ціна без ПДВ |
|---|---|
| 20+ | 16.27 грн |
| 32+ | 9.63 грн |
| 100+ | 5.93 грн |
| 500+ | 4.07 грн |
| 1000+ | 3.59 грн |
| TBD62503APG |
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Виробник: Toshiba Semiconductor and Storage
Description: IC PWR SWITCH N-CHAN 1:1 16DIP
Packaging: Tube
Package / Case: 16-DIP (0.300", 7.62mm)
Output Type: N-Channel
Mounting Type: Through Hole
Number of Outputs: 7
Interface: On/Off
Switch Type: General Purpose
Operating Temperature: -40°C ~ 85°C (TA)
Output Configuration: Low Side
Input Type: Inverting
Voltage - Load: 50V (Max)
Voltage - Supply (Vcc/Vdd): Not Required
Current - Output (Max): 300mA
Ratio - Input:Output: 1:1
Supplier Device Package: 16-DIP
Description: IC PWR SWITCH N-CHAN 1:1 16DIP
Packaging: Tube
Package / Case: 16-DIP (0.300", 7.62mm)
Output Type: N-Channel
Mounting Type: Through Hole
Number of Outputs: 7
Interface: On/Off
Switch Type: General Purpose
Operating Temperature: -40°C ~ 85°C (TA)
Output Configuration: Low Side
Input Type: Inverting
Voltage - Load: 50V (Max)
Voltage - Supply (Vcc/Vdd): Not Required
Current - Output (Max): 300mA
Ratio - Input:Output: 1:1
Supplier Device Package: 16-DIP
на замовлення 1740 шт:
термін постачання 21-31 дні (днів)
| Кількість | Ціна без ПДВ |
|---|---|
| 3+ | 134.06 грн |
| 10+ | 95.29 грн |
| 25+ | 86.83 грн |
| 100+ | 72.71 грн |
| 250+ | 68.53 грн |
| 500+ | 66.01 грн |
| 1000+ | 62.88 грн |
| TC358748XBG(EL) |
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Виробник: Toshiba Semiconductor and Storage
Description: IC INTFACE SPECIALIZED 80VFBGA
Packaging: Tape & Reel (TR)
Package / Case: 80-VFBGA
Mounting Type: Surface Mount
Interface: SPI
Voltage - Supply: 1.8V ~ 3.3V
Applications: Camera
Supplier Device Package: 80-VFBGA (7x7)
Description: IC INTFACE SPECIALIZED 80VFBGA
Packaging: Tape & Reel (TR)
Package / Case: 80-VFBGA
Mounting Type: Surface Mount
Interface: SPI
Voltage - Supply: 1.8V ~ 3.3V
Applications: Camera
Supplier Device Package: 80-VFBGA (7x7)
товару немає в наявності
Мінімальне замовлення: 1000 шт
В кошику
од. на суму грн.
| TC358748XBG(EL) |
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Виробник: Toshiba Semiconductor and Storage
Description: IC INTFACE SPECIALIZED 80VFBGA
Packaging: Cut Tape (CT)
Package / Case: 80-VFBGA
Mounting Type: Surface Mount
Interface: SPI
Voltage - Supply: 1.8V ~ 3.3V
Applications: Camera
Supplier Device Package: 80-VFBGA (7x7)
Description: IC INTFACE SPECIALIZED 80VFBGA
Packaging: Cut Tape (CT)
Package / Case: 80-VFBGA
Mounting Type: Surface Mount
Interface: SPI
Voltage - Supply: 1.8V ~ 3.3V
Applications: Camera
Supplier Device Package: 80-VFBGA (7x7)
товару немає в наявності
В кошику
од. на суму грн.
| HN1A01FU-GR,LXHF |
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Виробник: Toshiba Semiconductor and Storage
Description: PNP + PNP BIPOLAR TRANSISTOR, -5
Packaging: Tape & Reel (TR)
Package / Case: 6-TSSOP, SC-88, SOT-363
Mounting Type: Surface Mount
Transistor Type: 2 PNP
Power - Max: 200mW
Current - Collector (Ic) (Max): 150mA
Voltage - Collector Emitter Breakdown (Max): 50V
Vce Saturation (Max) @ Ib, Ic: 300mV @ 10mA, 100mA
Current - Collector Cutoff (Max): 100nA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce: 200 @ 2mA, 6V
Frequency - Transition: 80MHz
Supplier Device Package: US6
Grade: Automotive
Qualification: AEC-Q101
Description: PNP + PNP BIPOLAR TRANSISTOR, -5
Packaging: Tape & Reel (TR)
Package / Case: 6-TSSOP, SC-88, SOT-363
Mounting Type: Surface Mount
Transistor Type: 2 PNP
Power - Max: 200mW
Current - Collector (Ic) (Max): 150mA
Voltage - Collector Emitter Breakdown (Max): 50V
Vce Saturation (Max) @ Ib, Ic: 300mV @ 10mA, 100mA
Current - Collector Cutoff (Max): 100nA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce: 200 @ 2mA, 6V
Frequency - Transition: 80MHz
Supplier Device Package: US6
Grade: Automotive
Qualification: AEC-Q101
товару немає в наявності
В кошику
од. на суму грн.
| SSM5P15FU,LF |
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Виробник: Toshiba Semiconductor and Storage
Description: MOSFET 2P-CH 30V 0.1A USV
Supplier Device Package: USV
Vgs(th) (Max) @ Id: 1.7V @ 100µA
Rds On (Max) @ Id, Vgs: 12Ohm @ 10mA, 4V
Input Capacitance (Ciss) (Max) @ Vds: 9.1pF @ 3V
Current - Continuous Drain (Id) @ 25°C: 100mA (Ta)
Drain to Source Voltage (Vdss): 30V
Power - Max: 200mW (Ta)
Technology: MOSFET (Metal Oxide)
Operating Temperature: 150°C
Configuration: 2 P-Channel (Dual)
Mounting Type: Surface Mount
Package / Case: 5-TSSOP, SC-70-5, SOT-353
Packaging: Tape & Reel (TR)
Description: MOSFET 2P-CH 30V 0.1A USV
Supplier Device Package: USV
Vgs(th) (Max) @ Id: 1.7V @ 100µA
Rds On (Max) @ Id, Vgs: 12Ohm @ 10mA, 4V
Input Capacitance (Ciss) (Max) @ Vds: 9.1pF @ 3V
Current - Continuous Drain (Id) @ 25°C: 100mA (Ta)
Drain to Source Voltage (Vdss): 30V
Power - Max: 200mW (Ta)
Technology: MOSFET (Metal Oxide)
Operating Temperature: 150°C
Configuration: 2 P-Channel (Dual)
Mounting Type: Surface Mount
Package / Case: 5-TSSOP, SC-70-5, SOT-353
Packaging: Tape & Reel (TR)
товару немає в наявності
Мінімальне замовлення: 3000 шт
В кошику
од. на суму грн.
| SSM5P15FU,LF |
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Виробник: Toshiba Semiconductor and Storage
Description: MOSFET 2P-CH 30V 0.1A USV
Packaging: Cut Tape (CT)
Supplier Device Package: USV
Vgs(th) (Max) @ Id: 1.7V @ 100µA
Rds On (Max) @ Id, Vgs: 12Ohm @ 10mA, 4V
Input Capacitance (Ciss) (Max) @ Vds: 9.1pF @ 3V
Current - Continuous Drain (Id) @ 25°C: 100mA (Ta)
Drain to Source Voltage (Vdss): 30V
Power - Max: 200mW (Ta)
Technology: MOSFET (Metal Oxide)
Operating Temperature: 150°C
Configuration: 2 P-Channel (Dual)
Mounting Type: Surface Mount
Package / Case: 5-TSSOP, SC-70-5, SOT-353
Description: MOSFET 2P-CH 30V 0.1A USV
Packaging: Cut Tape (CT)
Supplier Device Package: USV
Vgs(th) (Max) @ Id: 1.7V @ 100µA
Rds On (Max) @ Id, Vgs: 12Ohm @ 10mA, 4V
Input Capacitance (Ciss) (Max) @ Vds: 9.1pF @ 3V
Current - Continuous Drain (Id) @ 25°C: 100mA (Ta)
Drain to Source Voltage (Vdss): 30V
Power - Max: 200mW (Ta)
Technology: MOSFET (Metal Oxide)
Operating Temperature: 150°C
Configuration: 2 P-Channel (Dual)
Mounting Type: Surface Mount
Package / Case: 5-TSSOP, SC-70-5, SOT-353
на замовлення 2956 шт:
термін постачання 21-31 дні (днів)
| Кількість | Ціна без ПДВ |
|---|---|
| 13+ | 24.80 грн |
| 21+ | 14.70 грн |
| 100+ | 9.22 грн |
| 500+ | 6.42 грн |
| 1000+ | 5.70 грн |
| RN2701,LF |
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Виробник: Toshiba Semiconductor and Storage
Description: TRANS PREBIAS 2PNP 50V 100MA USV
Packaging: Tape & Reel (TR)
Package / Case: 5-TSSOP, SC-70-5, SOT-353
Mounting Type: Surface Mount
Transistor Type: 2 PNP - Pre-Biased (Dual)
Power - Max: 200mW
Current - Collector (Ic) (Max): 100mA
Voltage - Collector Emitter Breakdown (Max): 50V
Vce Saturation (Max) @ Ib, Ic: 300mV @ 250µA, 5mA
Current - Collector Cutoff (Max): 500nA
DC Current Gain (hFE) (Min) @ Ic, Vce: 30 @ 10mA, 5V
Frequency - Transition: 200MHz
Resistor - Base (R1): 4.7kOhms
Resistor - Emitter Base (R2): 4.7kOhms
Supplier Device Package: USV
Description: TRANS PREBIAS 2PNP 50V 100MA USV
Packaging: Tape & Reel (TR)
Package / Case: 5-TSSOP, SC-70-5, SOT-353
Mounting Type: Surface Mount
Transistor Type: 2 PNP - Pre-Biased (Dual)
Power - Max: 200mW
Current - Collector (Ic) (Max): 100mA
Voltage - Collector Emitter Breakdown (Max): 50V
Vce Saturation (Max) @ Ib, Ic: 300mV @ 250µA, 5mA
Current - Collector Cutoff (Max): 500nA
DC Current Gain (hFE) (Min) @ Ic, Vce: 30 @ 10mA, 5V
Frequency - Transition: 200MHz
Resistor - Base (R1): 4.7kOhms
Resistor - Emitter Base (R2): 4.7kOhms
Supplier Device Package: USV
на замовлення 6000 шт:
термін постачання 21-31 дні (днів)
| Кількість | Ціна без ПДВ |
|---|---|
| 3000+ | 3.21 грн |
| 6000+ | 2.77 грн |
| RN2701,LF |
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Виробник: Toshiba Semiconductor and Storage
Description: TRANS PREBIAS 2PNP 50V 100MA USV
Packaging: Cut Tape (CT)
Package / Case: 5-TSSOP, SC-70-5, SOT-353
Mounting Type: Surface Mount
Transistor Type: 2 PNP - Pre-Biased (Dual)
Power - Max: 200mW
Current - Collector (Ic) (Max): 100mA
Voltage - Collector Emitter Breakdown (Max): 50V
Vce Saturation (Max) @ Ib, Ic: 300mV @ 250µA, 5mA
Current - Collector Cutoff (Max): 500nA
DC Current Gain (hFE) (Min) @ Ic, Vce: 30 @ 10mA, 5V
Frequency - Transition: 200MHz
Resistor - Base (R1): 4.7kOhms
Resistor - Emitter Base (R2): 4.7kOhms
Supplier Device Package: USV
Description: TRANS PREBIAS 2PNP 50V 100MA USV
Packaging: Cut Tape (CT)
Package / Case: 5-TSSOP, SC-70-5, SOT-353
Mounting Type: Surface Mount
Transistor Type: 2 PNP - Pre-Biased (Dual)
Power - Max: 200mW
Current - Collector (Ic) (Max): 100mA
Voltage - Collector Emitter Breakdown (Max): 50V
Vce Saturation (Max) @ Ib, Ic: 300mV @ 250µA, 5mA
Current - Collector Cutoff (Max): 500nA
DC Current Gain (hFE) (Min) @ Ic, Vce: 30 @ 10mA, 5V
Frequency - Transition: 200MHz
Resistor - Base (R1): 4.7kOhms
Resistor - Emitter Base (R2): 4.7kOhms
Supplier Device Package: USV
на замовлення 8938 шт:
термін постачання 21-31 дні (днів)
| Кількість | Ціна без ПДВ |
|---|---|
| 20+ | 16.27 грн |
| 32+ | 9.55 грн |
| 100+ | 5.93 грн |
| 500+ | 4.09 грн |
| 1000+ | 3.60 грн |
| DF2B6USL,L3F |
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Виробник: Toshiba Semiconductor and Storage
Description: TVS DIODE 5.5VWM 20VC SL2
Packaging: Tape & Reel (TR)
Package / Case: 2-SMD, No Lead
Mounting Type: Surface Mount
Type: Zener
Operating Temperature: 150°C (TJ)
Capacitance @ Frequency: 1.5pF @ 1MHz
Current - Peak Pulse (10/1000µs): 1.5A (8/20µs)
Voltage - Reverse Standoff (Typ): 5.5V (Max)
Supplier Device Package: SL2
Bidirectional Channels: 1
Voltage - Breakdown (Min): 5.7V
Voltage - Clamping (Max) @ Ipp: 20V
Power - Peak Pulse: 30W
Power Line Protection: No
Description: TVS DIODE 5.5VWM 20VC SL2
Packaging: Tape & Reel (TR)
Package / Case: 2-SMD, No Lead
Mounting Type: Surface Mount
Type: Zener
Operating Temperature: 150°C (TJ)
Capacitance @ Frequency: 1.5pF @ 1MHz
Current - Peak Pulse (10/1000µs): 1.5A (8/20µs)
Voltage - Reverse Standoff (Typ): 5.5V (Max)
Supplier Device Package: SL2
Bidirectional Channels: 1
Voltage - Breakdown (Min): 5.7V
Voltage - Clamping (Max) @ Ipp: 20V
Power - Peak Pulse: 30W
Power Line Protection: No
товару немає в наявності
Мінімальне замовлення: 10000 шт
В кошику
од. на суму грн.
| DF2B6USL,L3F |
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Виробник: Toshiba Semiconductor and Storage
Description: TVS DIODE 5.5VWM 20VC SL2
Packaging: Cut Tape (CT)
Package / Case: 2-SMD, No Lead
Mounting Type: Surface Mount
Type: Zener
Operating Temperature: 150°C (TJ)
Capacitance @ Frequency: 1.5pF @ 1MHz
Current - Peak Pulse (10/1000µs): 1.5A (8/20µs)
Voltage - Reverse Standoff (Typ): 5.5V (Max)
Supplier Device Package: SL2
Bidirectional Channels: 1
Voltage - Breakdown (Min): 5.7V
Voltage - Clamping (Max) @ Ipp: 20V
Power - Peak Pulse: 30W
Power Line Protection: No
Description: TVS DIODE 5.5VWM 20VC SL2
Packaging: Cut Tape (CT)
Package / Case: 2-SMD, No Lead
Mounting Type: Surface Mount
Type: Zener
Operating Temperature: 150°C (TJ)
Capacitance @ Frequency: 1.5pF @ 1MHz
Current - Peak Pulse (10/1000µs): 1.5A (8/20µs)
Voltage - Reverse Standoff (Typ): 5.5V (Max)
Supplier Device Package: SL2
Bidirectional Channels: 1
Voltage - Breakdown (Min): 5.7V
Voltage - Clamping (Max) @ Ipp: 20V
Power - Peak Pulse: 30W
Power Line Protection: No
на замовлення 492 шт:
термін постачання 21-31 дні (днів)
| Кількість | Ціна без ПДВ |
|---|---|
| 18+ | 17.82 грн |
| 29+ | 10.45 грн |
| 100+ | 6.52 грн |

























