| Фото | Назва | Виробник | Інформація |
Доступність |
Ціна |
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WML28N65C4 | WAYON |
Category: THT N channel transistorsDescription: Transistor: N-MOSFET; WMOS™ C4; unipolar; 650V; 13A; Idm: 65A; 31W Type of transistor: N-MOSFET Technology: WMOS™ C4 Polarisation: unipolar Drain-source voltage: 650V Drain current: 13A Pulsed drain current: 65A Power dissipation: 31W Case: TO220FP Gate-source voltage: ±30V On-state resistance: 0.16Ω Mounting: THT Gate charge: 27.3nC Kind of package: tube Kind of channel: enhancement кількість в упаковці: 1 шт |
на замовлення 167 шт: термін постачання 14-21 дні (днів) |
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| WML28N65F2 | WAYON |
Category: THT N channel transistors Description: Transistor: N-MOSFET; WMOS™ F2; unipolar; 650V; 13A; Idm: 65A; 31W Type of transistor: N-MOSFET Technology: WMOS™ F2 Polarisation: unipolar Drain-source voltage: 650V Drain current: 13A Pulsed drain current: 65A Power dissipation: 31W Case: TO220FP Gate-source voltage: ±30V On-state resistance: 0.19Ω Mounting: THT Gate charge: 27.3nC Kind of package: tube Kind of channel: enhancement |
товару немає в наявності |
В кошику од. на суму грн. | |||||||||||||||
| WML30N25JN | WAYON |
Category: THT N channel transistorsDescription: Transistor: N-MOSFET; unipolar; 250V; 12A; Idm: 63A; 27W; TO220FP Type of transistor: N-MOSFET Polarisation: unipolar Drain-source voltage: 250V Drain current: 12A Pulsed drain current: 63A Power dissipation: 27W Case: TO220FP Gate-source voltage: ±20V On-state resistance: 99mΩ Mounting: THT Gate charge: 9.8nC Kind of package: tube Kind of channel: enhancement Reverse recovery time: 133ns |
товару немає в наявності |
В кошику од. на суму грн. | |||||||||||||||
| WML30N65EM | WAYON |
Category: THT N channel transistors Description: Transistor: N-MOSFET; WMOS™ EM; unipolar; 650V; 16A; Idm: 100A; 34W Type of transistor: N-MOSFET Technology: WMOS™ EM Polarisation: unipolar Drain-source voltage: 650V Drain current: 16A Pulsed drain current: 100A Power dissipation: 34W Case: TO220FP Gate-source voltage: ±30V On-state resistance: 0.16Ω Mounting: THT Gate charge: 42nC Kind of package: tube Kind of channel: enhancement |
товару немає в наявності |
В кошику од. на суму грн. | |||||||||||||||
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WML340N20HG2 | WAYON |
Category: THT N channel transistors Description: Transistor: N-MOSFET; unipolar; 200V; 28A; Idm: 112A; 59.5W; TO220FP Type of transistor: N-MOSFET Polarisation: unipolar Drain-source voltage: 200V Drain current: 28A Pulsed drain current: 112A Power dissipation: 59.5W Case: TO220FP Gate-source voltage: ±20V On-state resistance: 34mΩ Mounting: THT Gate charge: 23nC Kind of package: tube Kind of channel: enhancement |
на замовлення 37 шт: термін постачання 21-30 дні (днів) |
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WML340N20HG2 | WAYON |
Category: THT N channel transistors Description: Transistor: N-MOSFET; unipolar; 200V; 28A; Idm: 112A; 59.5W; TO220FP Type of transistor: N-MOSFET Polarisation: unipolar Drain-source voltage: 200V Drain current: 28A Pulsed drain current: 112A Power dissipation: 59.5W Case: TO220FP Gate-source voltage: ±20V On-state resistance: 34mΩ Mounting: THT Gate charge: 23nC Kind of package: tube Kind of channel: enhancement кількість в упаковці: 1 шт |
на замовлення 37 шт: термін постачання 14-21 дні (днів) |
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WML36N60C4 | WAYON |
Category: THT N channel transistorsDescription: Transistor: N-MOSFET; WMOS™ C4; unipolar; 600V; 20A; Idm: 100A; 34W Type of transistor: N-MOSFET Technology: WMOS™ C4 Polarisation: unipolar Drain-source voltage: 600V Drain current: 20A Pulsed drain current: 100A Power dissipation: 34W Case: TO220FP Gate-source voltage: ±30V On-state resistance: 97mΩ Mounting: THT Gate charge: 46nC Kind of package: tube Kind of channel: enhancement |
на замовлення 69 шт: термін постачання 21-30 дні (днів) |
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WML36N60C4 | WAYON |
Category: THT N channel transistorsDescription: Transistor: N-MOSFET; WMOS™ C4; unipolar; 600V; 20A; Idm: 100A; 34W Type of transistor: N-MOSFET Technology: WMOS™ C4 Polarisation: unipolar Drain-source voltage: 600V Drain current: 20A Pulsed drain current: 100A Power dissipation: 34W Case: TO220FP Gate-source voltage: ±30V On-state resistance: 97mΩ Mounting: THT Gate charge: 46nC Kind of package: tube Kind of channel: enhancement кількість в упаковці: 1 шт |
на замовлення 69 шт: термін постачання 14-21 дні (днів) |
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WML36N60F2 | WAYON |
Category: THT N channel transistors Description: Transistor: N-MOSFET; WMOS™ F2; unipolar; 600V; 20A; Idm: 100A; 34W Type of transistor: N-MOSFET Technology: WMOS™ F2 Polarisation: unipolar Drain-source voltage: 600V Drain current: 20A Pulsed drain current: 100A Power dissipation: 34W Case: TO220FP Gate-source voltage: ±30V On-state resistance: 0.11Ω Mounting: THT Gate charge: 46nC Kind of package: tube Kind of channel: enhancement |
на замовлення 9 шт: термін постачання 21-30 дні (днів) |
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WML36N60F2 | WAYON |
Category: THT N channel transistors Description: Transistor: N-MOSFET; WMOS™ F2; unipolar; 600V; 20A; Idm: 100A; 34W Type of transistor: N-MOSFET Technology: WMOS™ F2 Polarisation: unipolar Drain-source voltage: 600V Drain current: 20A Pulsed drain current: 100A Power dissipation: 34W Case: TO220FP Gate-source voltage: ±30V On-state resistance: 0.11Ω Mounting: THT Gate charge: 46nC Kind of package: tube Kind of channel: enhancement кількість в упаковці: 1 шт |
на замовлення 9 шт: термін постачання 14-21 дні (днів) |
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| WML36N65C4 | WAYON |
Category: THT N channel transistors Description: Transistor: N-MOSFET; WMOS™ C4; unipolar; 650V; 20A; Idm: 100A; 34W Type of transistor: N-MOSFET Technology: WMOS™ C4 Polarisation: unipolar Drain-source voltage: 650V Drain current: 20A Pulsed drain current: 100A Power dissipation: 34W Case: TO220FP Gate-source voltage: ±30V On-state resistance: 97mΩ Mounting: THT Gate charge: 46nC Kind of package: tube Kind of channel: enhancement |
товару немає в наявності |
В кошику од. на суму грн. | |||||||||||||||
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WML38N60FD | WAYON |
Category: THT N channel transistors Description: Transistor: N-MOSFET; WMOS™ FD; unipolar; 600V; 38A; 34W; TO220FP Type of transistor: N-MOSFET Technology: WMOS™ FD Polarisation: unipolar Drain-source voltage: 600V Drain current: 38A Power dissipation: 34W Case: TO220FP Gate-source voltage: ±30V On-state resistance: 0.115Ω Mounting: THT Kind of package: tube Kind of channel: enhancement |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||||||||
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WML38N65FD | WAYON |
Category: THT N channel transistors Description: Transistor: N-MOSFET; WMOS™ FD; unipolar; 650V; 38A; 34W; TO220FP Type of transistor: N-MOSFET Technology: WMOS™ FD Polarisation: unipolar Drain-source voltage: 650V Drain current: 38A Power dissipation: 34W Case: TO220FP Gate-source voltage: ±30V On-state resistance: 0.115Ω Mounting: THT Kind of package: tube Kind of channel: enhancement |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||||||||
| WML3N150D1 | WAYON |
Category: THT N channel transistors Description: Transistor: N-MOSFET; WMOS™ D1; unipolar; 1.5kV; 3A; Idm: 12A; 41W Case: TO220FP Mounting: THT Kind of package: tube Type of transistor: N-MOSFET Polarisation: unipolar Gate charge: 40nC On-state resistance: 5.7Ω Drain current: 3A Pulsed drain current: 12A Gate-source voltage: ±30V Power dissipation: 41W Drain-source voltage: 1.5kV Kind of channel: enhancement Technology: WMOS™ D1 |
на замовлення 223 шт: термін постачання 21-30 дні (днів) |
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| WML3N150D1 | WAYON |
Category: THT N channel transistors Description: Transistor: N-MOSFET; WMOS™ D1; unipolar; 1.5kV; 3A; Idm: 12A; 41W Case: TO220FP Mounting: THT Kind of package: tube Type of transistor: N-MOSFET Polarisation: unipolar Gate charge: 40nC On-state resistance: 5.7Ω Drain current: 3A Pulsed drain current: 12A Gate-source voltage: ±30V Power dissipation: 41W Drain-source voltage: 1.5kV Kind of channel: enhancement Technology: WMOS™ D1 кількість в упаковці: 1 шт |
на замовлення 223 шт: термін постачання 14-21 дні (днів) |
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| WML40N20JN | WAYON |
Category: THT N channel transistorsDescription: Transistor: N-MOSFET; unipolar; 200V; 21A; Idm: 110A; 31W; TO220FP Type of transistor: N-MOSFET Polarisation: unipolar Drain-source voltage: 200V Drain current: 21A Pulsed drain current: 110A Power dissipation: 31W Case: TO220FP Gate-source voltage: ±20V On-state resistance: 46mΩ Mounting: THT Gate charge: 7.7nC Kind of package: tube Kind of channel: enhancement Reverse recovery time: 141ns |
товару немає в наявності |
В кошику од. на суму грн. | |||||||||||||||
| WML4N65D1B | WAYON |
Category: THT N channel transistors Description: Transistor: N-MOSFET; unipolar; 650V; 4A; Idm: 16A; 30W; TO220FP Type of transistor: N-MOSFET Polarisation: unipolar Drain-source voltage: 650V Drain current: 4A Pulsed drain current: 16A Power dissipation: 30W Case: TO220FP Gate-source voltage: ±30V On-state resistance: 2.2Ω Mounting: THT Gate charge: 14.5nC Kind of package: tube Kind of channel: enhancement |
товару немає в наявності |
В кошику од. на суму грн. | |||||||||||||||
| WML4N90D1 | WAYON |
Category: THT N channel transistors Description: Transistor: N-MOSFET; WMOS™ D1; unipolar; 900V; 4A; Idm: 16A; 40W Type of transistor: N-MOSFET Polarisation: unipolar Drain-source voltage: 900V Drain current: 4A Case: TO220FP Gate-source voltage: ±30V On-state resistance: 2.9Ω Mounting: THT Kind of package: tube Kind of channel: enhancement Technology: WMOS™ D1 Gate charge: 26nC Pulsed drain current: 16A Power dissipation: 40W |
товару немає в наявності |
В кошику од. на суму грн. | |||||||||||||||
| WML4N90D1B | WAYON |
Category: THT N channel transistors Description: Transistor: N-MOSFET; WMOS™ D1; unipolar; 900V; 4A; Idm: 16A; 45W Type of transistor: N-MOSFET Polarisation: unipolar Drain-source voltage: 900V Drain current: 4A Case: TO220FP Gate-source voltage: ±30V On-state resistance: 1.85Ω Mounting: THT Kind of package: tube Kind of channel: enhancement Technology: WMOS™ D1 Gate charge: 34nC Pulsed drain current: 16A Power dissipation: 45W |
товару немає в наявності |
В кошику од. на суму грн. | |||||||||||||||
| WML50N20JN | WAYON |
Category: THT N channel transistorsDescription: Transistor: N-MOSFET; unipolar; 200V; 24A; Idm: 120A; 31W; TO220FP Type of transistor: N-MOSFET Polarisation: unipolar Drain-source voltage: 200V Drain current: 24A Pulsed drain current: 120A Power dissipation: 31W Case: TO220FP Gate-source voltage: ±20V On-state resistance: 35mΩ Mounting: THT Gate charge: 10nC Kind of package: tube Kind of channel: enhancement Reverse recovery time: 138ns |
товару немає в наявності |
В кошику од. на суму грн. | |||||||||||||||
| WML50P04TS | WAYON | WML50P04TS-CYG THT P channel transistors |
на замовлення 57 шт: термін постачання 14-21 дні (днів) |
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WML53N60C2 | WAYON |
Category: THT N channel transistorsDescription: Transistor: N-MOSFET; WMOS™ C2; unipolar; 600V; 53A; 34W; TO220FP Type of transistor: N-MOSFET Technology: WMOS™ C2 Polarisation: unipolar Drain-source voltage: 600V Drain current: 53A Power dissipation: 34W Case: TO220FP Gate-source voltage: ±30V On-state resistance: 70mΩ Mounting: THT Kind of package: tube Kind of channel: enhancement |
на замовлення 143 шт: термін постачання 21-30 дні (днів) |
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WML53N60C2 | WAYON |
Category: THT N channel transistorsDescription: Transistor: N-MOSFET; WMOS™ C2; unipolar; 600V; 53A; 34W; TO220FP Type of transistor: N-MOSFET Technology: WMOS™ C2 Polarisation: unipolar Drain-source voltage: 600V Drain current: 53A Power dissipation: 34W Case: TO220FP Gate-source voltage: ±30V On-state resistance: 70mΩ Mounting: THT Kind of package: tube Kind of channel: enhancement кількість в упаковці: 1 шт |
на замовлення 143 шт: термін постачання 14-21 дні (днів) |
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WML53N60C4 | WAYON |
Category: THT N channel transistors Description: Transistor: N-MOSFET; WMOS™ C4; unipolar; 600V; 26A; Idm: 90A; 34W Type of transistor: N-MOSFET Technology: WMOS™ C4 Polarisation: unipolar Drain-source voltage: 600V Drain current: 26A Pulsed drain current: 90A Power dissipation: 34W Case: TO220FP Gate-source voltage: ±30V On-state resistance: 70mΩ Mounting: THT Gate charge: 58nC Kind of package: tube Kind of channel: enhancement |
на замовлення 24 шт: термін постачання 21-30 дні (днів) |
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WML53N60C4 | WAYON |
Category: THT N channel transistors Description: Transistor: N-MOSFET; WMOS™ C4; unipolar; 600V; 26A; Idm: 90A; 34W Type of transistor: N-MOSFET Technology: WMOS™ C4 Polarisation: unipolar Drain-source voltage: 600V Drain current: 26A Pulsed drain current: 90A Power dissipation: 34W Case: TO220FP Gate-source voltage: ±30V On-state resistance: 70mΩ Mounting: THT Gate charge: 58nC Kind of package: tube Kind of channel: enhancement кількість в упаковці: 1 шт |
на замовлення 24 шт: термін постачання 14-21 дні (днів) |
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WML53N60FD | WAYON |
Category: THT N channel transistors Description: Transistor: N-MOSFET; WMOS™ FD; unipolar; 600V; 53A; 34W; TO220FP Type of transistor: N-MOSFET Technology: WMOS™ FD Polarisation: unipolar Drain-source voltage: 600V Drain current: 53A Power dissipation: 34W Case: TO220FP Gate-source voltage: ±30V On-state resistance: 78mΩ Mounting: THT Kind of package: tube Kind of channel: enhancement |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||||||||
| WML6N100D1 | WAYON | WML6N100D1-CYG THT N channel transistors |
на замовлення 315 шт: термін постачання 14-21 дні (днів) |
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WML6N90D1 | WAYON |
Category: THT N channel transistors Description: Transistor: N-MOSFET; WMOS™ D1; unipolar; 900V; 6A; Idm: 24A; 50W Type of transistor: N-MOSFET Technology: WMOS™ D1 Polarisation: unipolar Drain-source voltage: 900V Drain current: 6A Pulsed drain current: 24A Power dissipation: 50W Case: TO220FP Gate-source voltage: ±30V On-state resistance: 1.7Ω Mounting: THT Gate charge: 86.2nC Kind of package: tube Kind of channel: enhancement |
на замовлення 256 шт: термін постачання 21-30 дні (днів) |
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WML6N90D1 | WAYON |
Category: THT N channel transistors Description: Transistor: N-MOSFET; WMOS™ D1; unipolar; 900V; 6A; Idm: 24A; 50W Type of transistor: N-MOSFET Technology: WMOS™ D1 Polarisation: unipolar Drain-source voltage: 900V Drain current: 6A Pulsed drain current: 24A Power dissipation: 50W Case: TO220FP Gate-source voltage: ±30V On-state resistance: 1.7Ω Mounting: THT Gate charge: 86.2nC Kind of package: tube Kind of channel: enhancement кількість в упаковці: 1 шт |
на замовлення 256 шт: термін постачання 14-21 дні (днів) |
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WML6N90D1B | WAYON |
Category: THT N channel transistors Description: Transistor: N-MOSFET; unipolar; 900V; 6A; TO220FP Type of transistor: N-MOSFET Polarisation: unipolar Drain-source voltage: 900V Drain current: 6A Case: TO220FP Gate-source voltage: ±30V On-state resistance: 2.3Ω Mounting: THT Kind of package: tube Kind of channel: enhancement |
на замовлення 679 шт: термін постачання 21-30 дні (днів) |
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WML6N90D1B | WAYON |
Category: THT N channel transistors Description: Transistor: N-MOSFET; unipolar; 900V; 6A; TO220FP Type of transistor: N-MOSFET Polarisation: unipolar Drain-source voltage: 900V Drain current: 6A Case: TO220FP Gate-source voltage: ±30V On-state resistance: 2.3Ω Mounting: THT Kind of package: tube Kind of channel: enhancement кількість в упаковці: 1 шт |
на замовлення 679 шт: термін постачання 14-21 дні (днів) |
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| WML7N65D1B | WAYON |
Category: THT N channel transistors Description: Transistor: N-MOSFET; WMOS™ D1; unipolar; 650V; 7A; Idm: 28A; 63W Type of transistor: N-MOSFET Polarisation: unipolar Drain-source voltage: 650V Drain current: 7A Pulsed drain current: 28A Power dissipation: 63W Case: TO220FP Gate-source voltage: ±30V On-state resistance: 1.35Ω Mounting: THT Gate charge: 24.3nC Kind of package: tube Kind of channel: enhancement Technology: WMOS™ D1 |
товару немає в наявності |
В кошику од. на суму грн. | |||||||||||||||
| WML7N80D1 | WAYON |
Category: THT N channel transistors Description: Transistor: N-MOSFET; unipolar; 800V; 7A; Idm: 28A; 52W; TO220FP Type of transistor: N-MOSFET Polarisation: unipolar Drain-source voltage: 800V Drain current: 7A Pulsed drain current: 28A Power dissipation: 52W Case: TO220FP Gate-source voltage: ±30V On-state resistance: 1.4Ω Mounting: THT Gate charge: 23nC Kind of package: tube Kind of channel: enhancement |
товару немає в наявності |
В кошику од. на суму грн. | |||||||||||||||
| WML90R830S | WAYON |
Category: THT N channel transistors Description: Transistor: N-MOSFET; WMOS™ S; unipolar; 900V; 7A; 73W; TO220FP Type of transistor: N-MOSFET Technology: WMOS™ S Polarisation: unipolar Drain-source voltage: 900V Drain current: 7A Power dissipation: 73W Case: TO220FP Gate-source voltage: ±30V On-state resistance: 0.83Ω Mounting: THT Kind of package: tube Kind of channel: enhancement |
товару немає в наявності |
В кошику од. на суму грн. | |||||||||||||||
| WML9N50D1B | WAYON |
Category: THT N channel transistors Description: Transistor: N-MOSFET; WMOS™ D1; unipolar; 500V; 9A; Idm: 36A; 45W Type of transistor: N-MOSFET Technology: WMOS™ D1 Polarisation: unipolar Drain-source voltage: 500V Drain current: 9A Pulsed drain current: 36A Power dissipation: 45W Case: TO220FP Gate-source voltage: ±30V On-state resistance: 0.68Ω Mounting: THT Gate charge: 72nC Kind of package: tube Kind of channel: enhancement |
товару немає в наявності |
В кошику од. на суму грн. | |||||||||||||||
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WMLL010N04LG4 | WAYON |
Category: SMD N channel transistorsDescription: Transistor: N-MOSFET; unipolar; 40V; 378A; Idm: 1512A; 333.3W; TOLL Type of transistor: N-MOSFET Polarisation: unipolar Drain-source voltage: 40V Drain current: 378A Pulsed drain current: 1512A Power dissipation: 333.3W Case: TOLL Gate-source voltage: ±20V On-state resistance: 1.3mΩ Mounting: SMD Gate charge: 118nC Kind of package: reel; tape Kind of channel: enhancement |
на замовлення 176 шт: термін постачання 21-30 дні (днів) |
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WMLL010N04LG4 | WAYON |
Category: SMD N channel transistorsDescription: Transistor: N-MOSFET; unipolar; 40V; 378A; Idm: 1512A; 333.3W; TOLL Type of transistor: N-MOSFET Polarisation: unipolar Drain-source voltage: 40V Drain current: 378A Pulsed drain current: 1512A Power dissipation: 333.3W Case: TOLL Gate-source voltage: ±20V On-state resistance: 1.3mΩ Mounting: SMD Gate charge: 118nC Kind of package: reel; tape Kind of channel: enhancement кількість в упаковці: 1 шт |
на замовлення 176 шт: термін постачання 14-21 дні (днів) |
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WMLL014N06HG4 | WAYON |
Category: SMD N channel transistors Description: Transistor: N-MOSFET; unipolar; 60V; 378A; Idm: 1512A; 454.5W; TOLL Type of transistor: N-MOSFET Polarisation: unipolar Drain-source voltage: 60V Drain current: 378A Pulsed drain current: 1512A Power dissipation: 454.5W Case: TOLL Gate-source voltage: ±20V On-state resistance: 1.55mΩ Mounting: SMD Gate charge: 102nC Kind of package: reel; tape Kind of channel: enhancement |
на замовлення 1 шт: термін постачання 21-30 дні (днів) |
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WMLL014N06HG4 | WAYON |
Category: SMD N channel transistors Description: Transistor: N-MOSFET; unipolar; 60V; 378A; Idm: 1512A; 454.5W; TOLL Type of transistor: N-MOSFET Polarisation: unipolar Drain-source voltage: 60V Drain current: 378A Pulsed drain current: 1512A Power dissipation: 454.5W Case: TOLL Gate-source voltage: ±20V On-state resistance: 1.55mΩ Mounting: SMD Gate charge: 102nC Kind of package: reel; tape Kind of channel: enhancement кількість в упаковці: 1 шт |
на замовлення 1 шт: термін постачання 14-21 дні (днів) |
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WMLL017N10HGS | WAYON |
Category: SMD N channel transistors Description: Transistor: N-MOSFET; unipolar; 60V; 378A; Idm: 1512A; 454.5W; TOLL Type of transistor: N-MOSFET Polarisation: unipolar Drain-source voltage: 60V Drain current: 378A Pulsed drain current: 1512A Power dissipation: 454.5W Case: TOLL Gate-source voltage: ±20V On-state resistance: 1.55mΩ Mounting: SMD Gate charge: 102nC Kind of package: reel; tape Kind of channel: enhancement |
на замовлення 2 шт: термін постачання 21-30 дні (днів) |
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WMLL017N10HGS | WAYON |
Category: SMD N channel transistors Description: Transistor: N-MOSFET; unipolar; 60V; 378A; Idm: 1512A; 454.5W; TOLL Type of transistor: N-MOSFET Polarisation: unipolar Drain-source voltage: 60V Drain current: 378A Pulsed drain current: 1512A Power dissipation: 454.5W Case: TOLL Gate-source voltage: ±20V On-state resistance: 1.55mΩ Mounting: SMD Gate charge: 102nC Kind of package: reel; tape Kind of channel: enhancement кількість в упаковці: 1 шт |
на замовлення 2 шт: термін постачання 14-21 дні (днів) |
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WMLL020N10HG4 | WAYON |
Category: SMD N channel transistors Description: Transistor: N-MOSFET; unipolar; 100V; 304A; Idm: 1216A; 468.7W; TOLL Mounting: SMD Kind of channel: enhancement Type of transistor: N-MOSFET Polarisation: unipolar Gate charge: 125nC On-state resistance: 2mΩ Gate-source voltage: ±20V Power dissipation: 468.7W Drain-source voltage: 100V Drain current: 304A Pulsed drain current: 1216A Case: TOLL Kind of package: reel; tape |
на замовлення 8 шт: термін постачання 21-30 дні (днів) |
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WMLL020N10HG4 | WAYON |
Category: SMD N channel transistors Description: Transistor: N-MOSFET; unipolar; 100V; 304A; Idm: 1216A; 468.7W; TOLL Mounting: SMD Kind of channel: enhancement Type of transistor: N-MOSFET Polarisation: unipolar Gate charge: 125nC On-state resistance: 2mΩ Gate-source voltage: ±20V Power dissipation: 468.7W Drain-source voltage: 100V Drain current: 304A Pulsed drain current: 1216A Case: TOLL Kind of package: reel; tape кількість в упаковці: 1 шт |
на замовлення 8 шт: термін постачання 14-21 дні (днів) |
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WMLL020N10HGS | WAYON |
Category: SMD N channel transistors Description: Transistor: N-MOSFET; unipolar; 100V; 200A; Idm: 1248A; 390.6W; TOLL Type of transistor: N-MOSFET Polarisation: unipolar Drain-source voltage: 100V Drain current: 200A Pulsed drain current: 1248A Power dissipation: 390.6W Case: TOLL Gate-source voltage: ±20V On-state resistance: 2mΩ Mounting: SMD Gate charge: 250nC Kind of package: reel; tape Kind of channel: enhancement |
на замовлення 22 шт: термін постачання 21-30 дні (днів) |
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WMLL020N10HGS | WAYON |
Category: SMD N channel transistors Description: Transistor: N-MOSFET; unipolar; 100V; 200A; Idm: 1248A; 390.6W; TOLL Type of transistor: N-MOSFET Polarisation: unipolar Drain-source voltage: 100V Drain current: 200A Pulsed drain current: 1248A Power dissipation: 390.6W Case: TOLL Gate-source voltage: ±20V On-state resistance: 2mΩ Mounting: SMD Gate charge: 250nC Kind of package: reel; tape Kind of channel: enhancement кількість в упаковці: 1 шт |
на замовлення 22 шт: термін постачання 14-21 дні (днів) |
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WMLL020NV8HGS | WAYON |
Category: SMD N channel transistors Description: Transistor: N-MOSFET; unipolar; 85V; 190A; Idm: 1200A; 347.2W; TOLL Type of transistor: N-MOSFET Polarisation: unipolar Drain-source voltage: 85V Drain current: 190A Pulsed drain current: 1.2kA Power dissipation: 347.2W Case: TOLL Gate-source voltage: ±20V On-state resistance: 2.2mΩ Mounting: SMD Gate charge: 142nC Kind of package: reel; tape Kind of channel: enhancement |
на замовлення 40 шт: термін постачання 21-30 дні (днів) |
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WMLL020NV8HGS | WAYON |
Category: SMD N channel transistors Description: Transistor: N-MOSFET; unipolar; 85V; 190A; Idm: 1200A; 347.2W; TOLL Type of transistor: N-MOSFET Polarisation: unipolar Drain-source voltage: 85V Drain current: 190A Pulsed drain current: 1.2kA Power dissipation: 347.2W Case: TOLL Gate-source voltage: ±20V On-state resistance: 2.2mΩ Mounting: SMD Gate charge: 142nC Kind of package: reel; tape Kind of channel: enhancement кількість в упаковці: 1 шт |
на замовлення 40 шт: термін постачання 14-21 дні (днів) |
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WMLL025N10HGS | WAYON |
Category: SMD N channel transistors Description: Transistor: N-MOSFET; unipolar; 100V; 260A; Idm: 1040A; 347.2W; TOLL Type of transistor: N-MOSFET Polarisation: unipolar Drain-source voltage: 100V Drain current: 260A Pulsed drain current: 1040A Power dissipation: 347.2W Case: TOLL Gate-source voltage: ±20V On-state resistance: 2.6mΩ Mounting: SMD Gate charge: 150nC Kind of package: reel; tape Kind of channel: enhancement |
на замовлення 23 шт: термін постачання 21-30 дні (днів) |
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WMLL025N10HGS | WAYON |
Category: SMD N channel transistors Description: Transistor: N-MOSFET; unipolar; 100V; 260A; Idm: 1040A; 347.2W; TOLL Type of transistor: N-MOSFET Polarisation: unipolar Drain-source voltage: 100V Drain current: 260A Pulsed drain current: 1040A Power dissipation: 347.2W Case: TOLL Gate-source voltage: ±20V On-state resistance: 2.6mΩ Mounting: SMD Gate charge: 150nC Kind of package: reel; tape Kind of channel: enhancement кількість в упаковці: 1 шт |
на замовлення 23 шт: термін постачання 14-21 дні (днів) |
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WMLL030N12HGS | WAYON |
Category: SMD N channel transistors Description: Transistor: N-MOSFET; unipolar; 120V; 225A; Idm: 900A; 365.8W; TOLL Type of transistor: N-MOSFET Polarisation: unipolar Drain-source voltage: 120V Drain current: 225A Pulsed drain current: 900A Power dissipation: 365.8W Case: TOLL Gate-source voltage: ±20V On-state resistance: 3.3mΩ Mounting: SMD Gate charge: 144nC Kind of package: reel; tape Kind of channel: enhancement |
на замовлення 205 шт: термін постачання 21-30 дні (днів) |
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WMLL030N12HGS | WAYON |
Category: SMD N channel transistors Description: Transistor: N-MOSFET; unipolar; 120V; 225A; Idm: 900A; 365.8W; TOLL Type of transistor: N-MOSFET Polarisation: unipolar Drain-source voltage: 120V Drain current: 225A Pulsed drain current: 900A Power dissipation: 365.8W Case: TOLL Gate-source voltage: ±20V On-state resistance: 3.3mΩ Mounting: SMD Gate charge: 144nC Kind of package: reel; tape Kind of channel: enhancement кількість в упаковці: 1 шт |
на замовлення 205 шт: термін постачання 14-21 дні (днів) |
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WMLL040N15HG2 | WAYON |
Category: SMD N channel transistors Description: Transistor: N-MOSFET; unipolar; 150V; 160A; Idm: 908A; 500W; TOLL Type of transistor: N-MOSFET Polarisation: unipolar Drain-source voltage: 150V Drain current: 160A Pulsed drain current: 908A Power dissipation: 500W Case: TOLL Gate-source voltage: ±20V On-state resistance: 4.2mΩ Mounting: SMD Gate charge: 74.3nC Kind of package: reel; tape Kind of channel: enhancement |
на замовлення 32 шт: термін постачання 21-30 дні (днів) |
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WMLL040N15HG2 | WAYON |
Category: SMD N channel transistors Description: Transistor: N-MOSFET; unipolar; 150V; 160A; Idm: 908A; 500W; TOLL Type of transistor: N-MOSFET Polarisation: unipolar Drain-source voltage: 150V Drain current: 160A Pulsed drain current: 908A Power dissipation: 500W Case: TOLL Gate-source voltage: ±20V On-state resistance: 4.2mΩ Mounting: SMD Gate charge: 74.3nC Kind of package: reel; tape Kind of channel: enhancement кількість в упаковці: 1 шт |
на замовлення 32 шт: термін постачання 14-21 дні (днів) |
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WMLL065N15HG2 | WAYON |
Category: SMD N channel transistors Description: Transistor: N-MOSFET; unipolar; 150V; 172A; Idm: 688A; 394.7W; TOLL Type of transistor: N-MOSFET Polarisation: unipolar Drain-source voltage: 150V Drain current: 172A Pulsed drain current: 688A Power dissipation: 394.7W Case: TOLL Gate-source voltage: ±20V On-state resistance: 6mΩ Mounting: SMD Gate charge: 85nC Kind of package: reel; tape Kind of channel: enhancement |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||||||||
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WMLL065N15HG2 | WAYON |
Category: SMD N channel transistors Description: Transistor: N-MOSFET; unipolar; 150V; 172A; Idm: 688A; 394.7W; TOLL Type of transistor: N-MOSFET Polarisation: unipolar Drain-source voltage: 150V Drain current: 172A Pulsed drain current: 688A Power dissipation: 394.7W Case: TOLL Gate-source voltage: ±20V On-state resistance: 6mΩ Mounting: SMD Gate charge: 85nC Kind of package: reel; tape Kind of channel: enhancement кількість в упаковці: 1 шт |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||||||||
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WMLL099N20HG2 | WAYON |
Category: SMD N channel transistors Description: Transistor: N-MOSFET; unipolar; 200V; 90A; Idm: 568A; 500W; TOLL Type of transistor: N-MOSFET Polarisation: unipolar Drain-source voltage: 200V Drain current: 90A Pulsed drain current: 568A Power dissipation: 500W Case: TOLL Gate-source voltage: ±20V On-state resistance: 10.5mΩ Mounting: SMD Gate charge: 68.5nC Kind of package: reel; tape Kind of channel: enhancement |
на замовлення 32 шт: термін постачання 21-30 дні (днів) |
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WMLL099N20HG2 | WAYON |
Category: SMD N channel transistors Description: Transistor: N-MOSFET; unipolar; 200V; 90A; Idm: 568A; 500W; TOLL Type of transistor: N-MOSFET Polarisation: unipolar Drain-source voltage: 200V Drain current: 90A Pulsed drain current: 568A Power dissipation: 500W Case: TOLL Gate-source voltage: ±20V On-state resistance: 10.5mΩ Mounting: SMD Gate charge: 68.5nC Kind of package: reel; tape Kind of channel: enhancement кількість в упаковці: 1 шт |
на замовлення 32 шт: термін постачання 14-21 дні (днів) |
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| WMLL130N20JN | WAYON |
Category: SMD N channel transistorsDescription: Transistor: N-MOSFET; unipolar; 200V; 117A; Idm: 620A; 416W; TOLL Case: TOLL Mounting: SMD Kind of channel: enhancement Type of transistor: N-MOSFET Polarisation: unipolar Gate-source voltage: ±20V Gate charge: 188nC Reverse recovery time: 196ns On-state resistance: 5.2mΩ Power dissipation: 416W Drain current: 117A Drain-source voltage: 200V Pulsed drain current: 620A Kind of package: reel; tape |
товару немає в наявності |
В кошику од. на суму грн. | |||||||||||||||
| WMLL130N25JN | WAYON |
Category: SMD N channel transistorsDescription: Transistor: N-MOSFET; unipolar; 250V; 96A; Idm: 435A; 312W; TOLL Type of transistor: N-MOSFET Polarisation: unipolar Drain-source voltage: 250V Drain current: 96A Pulsed drain current: 435A Power dissipation: 312W Case: TOLL Gate-source voltage: ±20V On-state resistance: 8.4mΩ Mounting: SMD Gate charge: 121nC Kind of package: reel; tape Kind of channel: enhancement Reverse recovery time: 195ns |
товару немає в наявності |
В кошику од. на суму грн. | |||||||||||||||
| WMLL160N25JN | WAYON |
Category: SMD N channel transistorsDescription: Transistor: N-MOSFET; unipolar; 250V; 96A; Idm: 580A; 416W; TOLL Type of transistor: N-MOSFET Polarisation: unipolar Drain-source voltage: 250V Drain current: 96A Pulsed drain current: 580A Power dissipation: 416W Case: TOLL Gate-source voltage: ±20V On-state resistance: 6.3mΩ Mounting: SMD Gate charge: 185nC Kind of package: reel; tape Kind of channel: enhancement Reverse recovery time: 260ns |
товару немає в наявності |
В кошику од. на суму грн. |
| WML28N65C4 |
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Виробник: WAYON
Category: THT N channel transistors
Description: Transistor: N-MOSFET; WMOS™ C4; unipolar; 650V; 13A; Idm: 65A; 31W
Type of transistor: N-MOSFET
Technology: WMOS™ C4
Polarisation: unipolar
Drain-source voltage: 650V
Drain current: 13A
Pulsed drain current: 65A
Power dissipation: 31W
Case: TO220FP
Gate-source voltage: ±30V
On-state resistance: 0.16Ω
Mounting: THT
Gate charge: 27.3nC
Kind of package: tube
Kind of channel: enhancement
кількість в упаковці: 1 шт
Category: THT N channel transistors
Description: Transistor: N-MOSFET; WMOS™ C4; unipolar; 650V; 13A; Idm: 65A; 31W
Type of transistor: N-MOSFET
Technology: WMOS™ C4
Polarisation: unipolar
Drain-source voltage: 650V
Drain current: 13A
Pulsed drain current: 65A
Power dissipation: 31W
Case: TO220FP
Gate-source voltage: ±30V
On-state resistance: 0.16Ω
Mounting: THT
Gate charge: 27.3nC
Kind of package: tube
Kind of channel: enhancement
кількість в упаковці: 1 шт
на замовлення 167 шт:
термін постачання 14-21 дні (днів)| Кількість | Ціна |
|---|---|
| 2+ | 161.60 грн |
| 5+ | 139.74 грн |
| 25+ | 119.08 грн |
| 100+ | 106.49 грн |
| 500+ | 105.52 грн |
| WML28N65F2 |
Виробник: WAYON
Category: THT N channel transistors
Description: Transistor: N-MOSFET; WMOS™ F2; unipolar; 650V; 13A; Idm: 65A; 31W
Type of transistor: N-MOSFET
Technology: WMOS™ F2
Polarisation: unipolar
Drain-source voltage: 650V
Drain current: 13A
Pulsed drain current: 65A
Power dissipation: 31W
Case: TO220FP
Gate-source voltage: ±30V
On-state resistance: 0.19Ω
Mounting: THT
Gate charge: 27.3nC
Kind of package: tube
Kind of channel: enhancement
Category: THT N channel transistors
Description: Transistor: N-MOSFET; WMOS™ F2; unipolar; 650V; 13A; Idm: 65A; 31W
Type of transistor: N-MOSFET
Technology: WMOS™ F2
Polarisation: unipolar
Drain-source voltage: 650V
Drain current: 13A
Pulsed drain current: 65A
Power dissipation: 31W
Case: TO220FP
Gate-source voltage: ±30V
On-state resistance: 0.19Ω
Mounting: THT
Gate charge: 27.3nC
Kind of package: tube
Kind of channel: enhancement
товару немає в наявності
В кошику
од. на суму грн.
| WML30N25JN |
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Виробник: WAYON
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 250V; 12A; Idm: 63A; 27W; TO220FP
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 250V
Drain current: 12A
Pulsed drain current: 63A
Power dissipation: 27W
Case: TO220FP
Gate-source voltage: ±20V
On-state resistance: 99mΩ
Mounting: THT
Gate charge: 9.8nC
Kind of package: tube
Kind of channel: enhancement
Reverse recovery time: 133ns
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 250V; 12A; Idm: 63A; 27W; TO220FP
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 250V
Drain current: 12A
Pulsed drain current: 63A
Power dissipation: 27W
Case: TO220FP
Gate-source voltage: ±20V
On-state resistance: 99mΩ
Mounting: THT
Gate charge: 9.8nC
Kind of package: tube
Kind of channel: enhancement
Reverse recovery time: 133ns
товару немає в наявності
В кошику
од. на суму грн.
| WML30N65EM |
Виробник: WAYON
Category: THT N channel transistors
Description: Transistor: N-MOSFET; WMOS™ EM; unipolar; 650V; 16A; Idm: 100A; 34W
Type of transistor: N-MOSFET
Technology: WMOS™ EM
Polarisation: unipolar
Drain-source voltage: 650V
Drain current: 16A
Pulsed drain current: 100A
Power dissipation: 34W
Case: TO220FP
Gate-source voltage: ±30V
On-state resistance: 0.16Ω
Mounting: THT
Gate charge: 42nC
Kind of package: tube
Kind of channel: enhancement
Category: THT N channel transistors
Description: Transistor: N-MOSFET; WMOS™ EM; unipolar; 650V; 16A; Idm: 100A; 34W
Type of transistor: N-MOSFET
Technology: WMOS™ EM
Polarisation: unipolar
Drain-source voltage: 650V
Drain current: 16A
Pulsed drain current: 100A
Power dissipation: 34W
Case: TO220FP
Gate-source voltage: ±30V
On-state resistance: 0.16Ω
Mounting: THT
Gate charge: 42nC
Kind of package: tube
Kind of channel: enhancement
товару немає в наявності
В кошику
од. на суму грн.
| WML340N20HG2 |
Виробник: WAYON
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 200V; 28A; Idm: 112A; 59.5W; TO220FP
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 200V
Drain current: 28A
Pulsed drain current: 112A
Power dissipation: 59.5W
Case: TO220FP
Gate-source voltage: ±20V
On-state resistance: 34mΩ
Mounting: THT
Gate charge: 23nC
Kind of package: tube
Kind of channel: enhancement
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 200V; 28A; Idm: 112A; 59.5W; TO220FP
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 200V
Drain current: 28A
Pulsed drain current: 112A
Power dissipation: 59.5W
Case: TO220FP
Gate-source voltage: ±20V
On-state resistance: 34mΩ
Mounting: THT
Gate charge: 23nC
Kind of package: tube
Kind of channel: enhancement
на замовлення 37 шт:
термін постачання 21-30 дні (днів)| Кількість | Ціна |
|---|---|
| 4+ | 136.41 грн |
| 10+ | 118.59 грн |
| WML340N20HG2 |
Виробник: WAYON
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 200V; 28A; Idm: 112A; 59.5W; TO220FP
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 200V
Drain current: 28A
Pulsed drain current: 112A
Power dissipation: 59.5W
Case: TO220FP
Gate-source voltage: ±20V
On-state resistance: 34mΩ
Mounting: THT
Gate charge: 23nC
Kind of package: tube
Kind of channel: enhancement
кількість в упаковці: 1 шт
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 200V; 28A; Idm: 112A; 59.5W; TO220FP
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 200V
Drain current: 28A
Pulsed drain current: 112A
Power dissipation: 59.5W
Case: TO220FP
Gate-source voltage: ±20V
On-state resistance: 34mΩ
Mounting: THT
Gate charge: 23nC
Kind of package: tube
Kind of channel: enhancement
кількість в упаковці: 1 шт
на замовлення 37 шт:
термін постачання 14-21 дні (днів)| Кількість | Ціна |
|---|---|
| 2+ | 163.69 грн |
| 10+ | 147.79 грн |
| 50+ | 126.82 грн |
| 250+ | 113.27 грн |
| 1000+ | 112.30 грн |
| WML36N60C4 |
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Виробник: WAYON
Category: THT N channel transistors
Description: Transistor: N-MOSFET; WMOS™ C4; unipolar; 600V; 20A; Idm: 100A; 34W
Type of transistor: N-MOSFET
Technology: WMOS™ C4
Polarisation: unipolar
Drain-source voltage: 600V
Drain current: 20A
Pulsed drain current: 100A
Power dissipation: 34W
Case: TO220FP
Gate-source voltage: ±30V
On-state resistance: 97mΩ
Mounting: THT
Gate charge: 46nC
Kind of package: tube
Kind of channel: enhancement
Category: THT N channel transistors
Description: Transistor: N-MOSFET; WMOS™ C4; unipolar; 600V; 20A; Idm: 100A; 34W
Type of transistor: N-MOSFET
Technology: WMOS™ C4
Polarisation: unipolar
Drain-source voltage: 600V
Drain current: 20A
Pulsed drain current: 100A
Power dissipation: 34W
Case: TO220FP
Gate-source voltage: ±30V
On-state resistance: 97mΩ
Mounting: THT
Gate charge: 46nC
Kind of package: tube
Kind of channel: enhancement
на замовлення 69 шт:
термін постачання 21-30 дні (днів)| Кількість | Ціна |
|---|---|
| 2+ | 238.06 грн |
| 3+ | 196.85 грн |
| 10+ | 165.39 грн |
| 25+ | 149.25 грн |
| WML36N60C4 |
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Виробник: WAYON
Category: THT N channel transistors
Description: Transistor: N-MOSFET; WMOS™ C4; unipolar; 600V; 20A; Idm: 100A; 34W
Type of transistor: N-MOSFET
Technology: WMOS™ C4
Polarisation: unipolar
Drain-source voltage: 600V
Drain current: 20A
Pulsed drain current: 100A
Power dissipation: 34W
Case: TO220FP
Gate-source voltage: ±30V
On-state resistance: 97mΩ
Mounting: THT
Gate charge: 46nC
Kind of package: tube
Kind of channel: enhancement
кількість в упаковці: 1 шт
Category: THT N channel transistors
Description: Transistor: N-MOSFET; WMOS™ C4; unipolar; 600V; 20A; Idm: 100A; 34W
Type of transistor: N-MOSFET
Technology: WMOS™ C4
Polarisation: unipolar
Drain-source voltage: 600V
Drain current: 20A
Pulsed drain current: 100A
Power dissipation: 34W
Case: TO220FP
Gate-source voltage: ±30V
On-state resistance: 97mΩ
Mounting: THT
Gate charge: 46nC
Kind of package: tube
Kind of channel: enhancement
кількість в упаковці: 1 шт
на замовлення 69 шт:
термін постачання 14-21 дні (днів)| Кількість | Ціна |
|---|---|
| 2+ | 285.67 грн |
| 3+ | 245.31 грн |
| 10+ | 198.46 грн |
| 25+ | 179.10 грн |
| 100+ | 165.55 грн |
| 250+ | 157.80 грн |
| 500+ | 150.06 грн |
| WML36N60F2 |
Виробник: WAYON
Category: THT N channel transistors
Description: Transistor: N-MOSFET; WMOS™ F2; unipolar; 600V; 20A; Idm: 100A; 34W
Type of transistor: N-MOSFET
Technology: WMOS™ F2
Polarisation: unipolar
Drain-source voltage: 600V
Drain current: 20A
Pulsed drain current: 100A
Power dissipation: 34W
Case: TO220FP
Gate-source voltage: ±30V
On-state resistance: 0.11Ω
Mounting: THT
Gate charge: 46nC
Kind of package: tube
Kind of channel: enhancement
Category: THT N channel transistors
Description: Transistor: N-MOSFET; WMOS™ F2; unipolar; 600V; 20A; Idm: 100A; 34W
Type of transistor: N-MOSFET
Technology: WMOS™ F2
Polarisation: unipolar
Drain-source voltage: 600V
Drain current: 20A
Pulsed drain current: 100A
Power dissipation: 34W
Case: TO220FP
Gate-source voltage: ±30V
On-state resistance: 0.11Ω
Mounting: THT
Gate charge: 46nC
Kind of package: tube
Kind of channel: enhancement
на замовлення 9 шт:
термін постачання 21-30 дні (днів)| Кількість | Ціна |
|---|---|
| 2+ | 277.15 грн |
| 3+ | 229.93 грн |
| WML36N60F2 |
Виробник: WAYON
Category: THT N channel transistors
Description: Transistor: N-MOSFET; WMOS™ F2; unipolar; 600V; 20A; Idm: 100A; 34W
Type of transistor: N-MOSFET
Technology: WMOS™ F2
Polarisation: unipolar
Drain-source voltage: 600V
Drain current: 20A
Pulsed drain current: 100A
Power dissipation: 34W
Case: TO220FP
Gate-source voltage: ±30V
On-state resistance: 0.11Ω
Mounting: THT
Gate charge: 46nC
Kind of package: tube
Kind of channel: enhancement
кількість в упаковці: 1 шт
Category: THT N channel transistors
Description: Transistor: N-MOSFET; WMOS™ F2; unipolar; 600V; 20A; Idm: 100A; 34W
Type of transistor: N-MOSFET
Technology: WMOS™ F2
Polarisation: unipolar
Drain-source voltage: 600V
Drain current: 20A
Pulsed drain current: 100A
Power dissipation: 34W
Case: TO220FP
Gate-source voltage: ±30V
On-state resistance: 0.11Ω
Mounting: THT
Gate charge: 46nC
Kind of package: tube
Kind of channel: enhancement
кількість в упаковці: 1 шт
на замовлення 9 шт:
термін постачання 14-21 дні (днів)| Кількість | Ціна |
|---|---|
| 1+ | 332.59 грн |
| 3+ | 286.53 грн |
| 10+ | 231.38 грн |
| 25+ | 208.15 грн |
| 100+ | 192.66 грн |
| 250+ | 183.94 грн |
| 500+ | 175.23 грн |
| WML36N65C4 |
Виробник: WAYON
Category: THT N channel transistors
Description: Transistor: N-MOSFET; WMOS™ C4; unipolar; 650V; 20A; Idm: 100A; 34W
Type of transistor: N-MOSFET
Technology: WMOS™ C4
Polarisation: unipolar
Drain-source voltage: 650V
Drain current: 20A
Pulsed drain current: 100A
Power dissipation: 34W
Case: TO220FP
Gate-source voltage: ±30V
On-state resistance: 97mΩ
Mounting: THT
Gate charge: 46nC
Kind of package: tube
Kind of channel: enhancement
Category: THT N channel transistors
Description: Transistor: N-MOSFET; WMOS™ C4; unipolar; 650V; 20A; Idm: 100A; 34W
Type of transistor: N-MOSFET
Technology: WMOS™ C4
Polarisation: unipolar
Drain-source voltage: 650V
Drain current: 20A
Pulsed drain current: 100A
Power dissipation: 34W
Case: TO220FP
Gate-source voltage: ±30V
On-state resistance: 97mΩ
Mounting: THT
Gate charge: 46nC
Kind of package: tube
Kind of channel: enhancement
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| WML38N60FD |
Виробник: WAYON
Category: THT N channel transistors
Description: Transistor: N-MOSFET; WMOS™ FD; unipolar; 600V; 38A; 34W; TO220FP
Type of transistor: N-MOSFET
Technology: WMOS™ FD
Polarisation: unipolar
Drain-source voltage: 600V
Drain current: 38A
Power dissipation: 34W
Case: TO220FP
Gate-source voltage: ±30V
On-state resistance: 0.115Ω
Mounting: THT
Kind of package: tube
Kind of channel: enhancement
Category: THT N channel transistors
Description: Transistor: N-MOSFET; WMOS™ FD; unipolar; 600V; 38A; 34W; TO220FP
Type of transistor: N-MOSFET
Technology: WMOS™ FD
Polarisation: unipolar
Drain-source voltage: 600V
Drain current: 38A
Power dissipation: 34W
Case: TO220FP
Gate-source voltage: ±30V
On-state resistance: 0.115Ω
Mounting: THT
Kind of package: tube
Kind of channel: enhancement
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| WML38N65FD |
Виробник: WAYON
Category: THT N channel transistors
Description: Transistor: N-MOSFET; WMOS™ FD; unipolar; 650V; 38A; 34W; TO220FP
Type of transistor: N-MOSFET
Technology: WMOS™ FD
Polarisation: unipolar
Drain-source voltage: 650V
Drain current: 38A
Power dissipation: 34W
Case: TO220FP
Gate-source voltage: ±30V
On-state resistance: 0.115Ω
Mounting: THT
Kind of package: tube
Kind of channel: enhancement
Category: THT N channel transistors
Description: Transistor: N-MOSFET; WMOS™ FD; unipolar; 650V; 38A; 34W; TO220FP
Type of transistor: N-MOSFET
Technology: WMOS™ FD
Polarisation: unipolar
Drain-source voltage: 650V
Drain current: 38A
Power dissipation: 34W
Case: TO220FP
Gate-source voltage: ±30V
On-state resistance: 0.115Ω
Mounting: THT
Kind of package: tube
Kind of channel: enhancement
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| WML3N150D1 |
Виробник: WAYON
Category: THT N channel transistors
Description: Transistor: N-MOSFET; WMOS™ D1; unipolar; 1.5kV; 3A; Idm: 12A; 41W
Case: TO220FP
Mounting: THT
Kind of package: tube
Type of transistor: N-MOSFET
Polarisation: unipolar
Gate charge: 40nC
On-state resistance: 5.7Ω
Drain current: 3A
Pulsed drain current: 12A
Gate-source voltage: ±30V
Power dissipation: 41W
Drain-source voltage: 1.5kV
Kind of channel: enhancement
Technology: WMOS™ D1
Category: THT N channel transistors
Description: Transistor: N-MOSFET; WMOS™ D1; unipolar; 1.5kV; 3A; Idm: 12A; 41W
Case: TO220FP
Mounting: THT
Kind of package: tube
Type of transistor: N-MOSFET
Polarisation: unipolar
Gate charge: 40nC
On-state resistance: 5.7Ω
Drain current: 3A
Pulsed drain current: 12A
Gate-source voltage: ±30V
Power dissipation: 41W
Drain-source voltage: 1.5kV
Kind of channel: enhancement
Technology: WMOS™ D1
на замовлення 223 шт:
термін постачання 21-30 дні (днів)| Кількість | Ціна |
|---|---|
| 6+ | 72.98 грн |
| 7+ | 61.31 грн |
| 30+ | 54.05 грн |
| 120+ | 48.41 грн |
| WML3N150D1 |
Виробник: WAYON
Category: THT N channel transistors
Description: Transistor: N-MOSFET; WMOS™ D1; unipolar; 1.5kV; 3A; Idm: 12A; 41W
Case: TO220FP
Mounting: THT
Kind of package: tube
Type of transistor: N-MOSFET
Polarisation: unipolar
Gate charge: 40nC
On-state resistance: 5.7Ω
Drain current: 3A
Pulsed drain current: 12A
Gate-source voltage: ±30V
Power dissipation: 41W
Drain-source voltage: 1.5kV
Kind of channel: enhancement
Technology: WMOS™ D1
кількість в упаковці: 1 шт
Category: THT N channel transistors
Description: Transistor: N-MOSFET; WMOS™ D1; unipolar; 1.5kV; 3A; Idm: 12A; 41W
Case: TO220FP
Mounting: THT
Kind of package: tube
Type of transistor: N-MOSFET
Polarisation: unipolar
Gate charge: 40nC
On-state resistance: 5.7Ω
Drain current: 3A
Pulsed drain current: 12A
Gate-source voltage: ±30V
Power dissipation: 41W
Drain-source voltage: 1.5kV
Kind of channel: enhancement
Technology: WMOS™ D1
кількість в упаковці: 1 шт
на замовлення 223 шт:
термін постачання 14-21 дні (днів)| Кількість | Ціна |
|---|---|
| 4+ | 87.58 грн |
| 5+ | 76.41 грн |
| 30+ | 64.86 грн |
| 120+ | 58.09 грн |
| 300+ | 56.15 грн |
| WML40N20JN |
![]() |
Виробник: WAYON
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 200V; 21A; Idm: 110A; 31W; TO220FP
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 200V
Drain current: 21A
Pulsed drain current: 110A
Power dissipation: 31W
Case: TO220FP
Gate-source voltage: ±20V
On-state resistance: 46mΩ
Mounting: THT
Gate charge: 7.7nC
Kind of package: tube
Kind of channel: enhancement
Reverse recovery time: 141ns
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 200V; 21A; Idm: 110A; 31W; TO220FP
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 200V
Drain current: 21A
Pulsed drain current: 110A
Power dissipation: 31W
Case: TO220FP
Gate-source voltage: ±20V
On-state resistance: 46mΩ
Mounting: THT
Gate charge: 7.7nC
Kind of package: tube
Kind of channel: enhancement
Reverse recovery time: 141ns
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| WML4N65D1B |
Виробник: WAYON
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 650V; 4A; Idm: 16A; 30W; TO220FP
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 650V
Drain current: 4A
Pulsed drain current: 16A
Power dissipation: 30W
Case: TO220FP
Gate-source voltage: ±30V
On-state resistance: 2.2Ω
Mounting: THT
Gate charge: 14.5nC
Kind of package: tube
Kind of channel: enhancement
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 650V; 4A; Idm: 16A; 30W; TO220FP
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 650V
Drain current: 4A
Pulsed drain current: 16A
Power dissipation: 30W
Case: TO220FP
Gate-source voltage: ±30V
On-state resistance: 2.2Ω
Mounting: THT
Gate charge: 14.5nC
Kind of package: tube
Kind of channel: enhancement
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В кошику
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| WML4N90D1 |
Виробник: WAYON
Category: THT N channel transistors
Description: Transistor: N-MOSFET; WMOS™ D1; unipolar; 900V; 4A; Idm: 16A; 40W
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 900V
Drain current: 4A
Case: TO220FP
Gate-source voltage: ±30V
On-state resistance: 2.9Ω
Mounting: THT
Kind of package: tube
Kind of channel: enhancement
Technology: WMOS™ D1
Gate charge: 26nC
Pulsed drain current: 16A
Power dissipation: 40W
Category: THT N channel transistors
Description: Transistor: N-MOSFET; WMOS™ D1; unipolar; 900V; 4A; Idm: 16A; 40W
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 900V
Drain current: 4A
Case: TO220FP
Gate-source voltage: ±30V
On-state resistance: 2.9Ω
Mounting: THT
Kind of package: tube
Kind of channel: enhancement
Technology: WMOS™ D1
Gate charge: 26nC
Pulsed drain current: 16A
Power dissipation: 40W
товару немає в наявності
В кошику
од. на суму грн.
| WML4N90D1B |
Виробник: WAYON
Category: THT N channel transistors
Description: Transistor: N-MOSFET; WMOS™ D1; unipolar; 900V; 4A; Idm: 16A; 45W
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 900V
Drain current: 4A
Case: TO220FP
Gate-source voltage: ±30V
On-state resistance: 1.85Ω
Mounting: THT
Kind of package: tube
Kind of channel: enhancement
Technology: WMOS™ D1
Gate charge: 34nC
Pulsed drain current: 16A
Power dissipation: 45W
Category: THT N channel transistors
Description: Transistor: N-MOSFET; WMOS™ D1; unipolar; 900V; 4A; Idm: 16A; 45W
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 900V
Drain current: 4A
Case: TO220FP
Gate-source voltage: ±30V
On-state resistance: 1.85Ω
Mounting: THT
Kind of package: tube
Kind of channel: enhancement
Technology: WMOS™ D1
Gate charge: 34nC
Pulsed drain current: 16A
Power dissipation: 45W
товару немає в наявності
В кошику
од. на суму грн.
| WML50N20JN |
![]() |
Виробник: WAYON
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 200V; 24A; Idm: 120A; 31W; TO220FP
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 200V
Drain current: 24A
Pulsed drain current: 120A
Power dissipation: 31W
Case: TO220FP
Gate-source voltage: ±20V
On-state resistance: 35mΩ
Mounting: THT
Gate charge: 10nC
Kind of package: tube
Kind of channel: enhancement
Reverse recovery time: 138ns
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 200V; 24A; Idm: 120A; 31W; TO220FP
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 200V
Drain current: 24A
Pulsed drain current: 120A
Power dissipation: 31W
Case: TO220FP
Gate-source voltage: ±20V
On-state resistance: 35mΩ
Mounting: THT
Gate charge: 10nC
Kind of package: tube
Kind of channel: enhancement
Reverse recovery time: 138ns
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| WML50P04TS |
Виробник: WAYON
WML50P04TS-CYG THT P channel transistors
WML50P04TS-CYG THT P channel transistors
на замовлення 57 шт:
термін постачання 14-21 дні (днів)| Кількість | Ціна |
|---|---|
| 4+ | 79.65 грн |
| 37+ | 31.37 грн |
| 100+ | 29.72 грн |
| WML53N60C2 |
![]() |
Виробник: WAYON
Category: THT N channel transistors
Description: Transistor: N-MOSFET; WMOS™ C2; unipolar; 600V; 53A; 34W; TO220FP
Type of transistor: N-MOSFET
Technology: WMOS™ C2
Polarisation: unipolar
Drain-source voltage: 600V
Drain current: 53A
Power dissipation: 34W
Case: TO220FP
Gate-source voltage: ±30V
On-state resistance: 70mΩ
Mounting: THT
Kind of package: tube
Kind of channel: enhancement
Category: THT N channel transistors
Description: Transistor: N-MOSFET; WMOS™ C2; unipolar; 600V; 53A; 34W; TO220FP
Type of transistor: N-MOSFET
Technology: WMOS™ C2
Polarisation: unipolar
Drain-source voltage: 600V
Drain current: 53A
Power dissipation: 34W
Case: TO220FP
Gate-source voltage: ±30V
On-state resistance: 70mΩ
Mounting: THT
Kind of package: tube
Kind of channel: enhancement
на замовлення 143 шт:
термін постачання 21-30 дні (днів)| Кількість | Ціна |
|---|---|
| 2+ | 315.38 грн |
| 5+ | 263.81 грн |
| 25+ | 232.35 грн |
| 100+ | 210.57 грн |
| WML53N60C2 |
![]() |
Виробник: WAYON
Category: THT N channel transistors
Description: Transistor: N-MOSFET; WMOS™ C2; unipolar; 600V; 53A; 34W; TO220FP
Type of transistor: N-MOSFET
Technology: WMOS™ C2
Polarisation: unipolar
Drain-source voltage: 600V
Drain current: 53A
Power dissipation: 34W
Case: TO220FP
Gate-source voltage: ±30V
On-state resistance: 70mΩ
Mounting: THT
Kind of package: tube
Kind of channel: enhancement
кількість в упаковці: 1 шт
Category: THT N channel transistors
Description: Transistor: N-MOSFET; WMOS™ C2; unipolar; 600V; 53A; 34W; TO220FP
Type of transistor: N-MOSFET
Technology: WMOS™ C2
Polarisation: unipolar
Drain-source voltage: 600V
Drain current: 53A
Power dissipation: 34W
Case: TO220FP
Gate-source voltage: ±30V
On-state resistance: 70mΩ
Mounting: THT
Kind of package: tube
Kind of channel: enhancement
кількість в упаковці: 1 шт
на замовлення 143 шт:
термін постачання 14-21 дні (днів)| Кількість | Ціна |
|---|---|
| 1+ | 378.46 грн |
| 5+ | 328.75 грн |
| 25+ | 278.82 грн |
| 100+ | 252.68 грн |
| WML53N60C4 |
Виробник: WAYON
Category: THT N channel transistors
Description: Transistor: N-MOSFET; WMOS™ C4; unipolar; 600V; 26A; Idm: 90A; 34W
Type of transistor: N-MOSFET
Technology: WMOS™ C4
Polarisation: unipolar
Drain-source voltage: 600V
Drain current: 26A
Pulsed drain current: 90A
Power dissipation: 34W
Case: TO220FP
Gate-source voltage: ±30V
On-state resistance: 70mΩ
Mounting: THT
Gate charge: 58nC
Kind of package: tube
Kind of channel: enhancement
Category: THT N channel transistors
Description: Transistor: N-MOSFET; WMOS™ C4; unipolar; 600V; 26A; Idm: 90A; 34W
Type of transistor: N-MOSFET
Technology: WMOS™ C4
Polarisation: unipolar
Drain-source voltage: 600V
Drain current: 26A
Pulsed drain current: 90A
Power dissipation: 34W
Case: TO220FP
Gate-source voltage: ±30V
On-state resistance: 70mΩ
Mounting: THT
Gate charge: 58nC
Kind of package: tube
Kind of channel: enhancement
на замовлення 24 шт:
термін постачання 21-30 дні (днів)| Кількість | Ціна |
|---|---|
| 2+ | 306.69 грн |
| 3+ | 254.13 грн |
| 10+ | 213.79 грн |
| WML53N60C4 |
Виробник: WAYON
Category: THT N channel transistors
Description: Transistor: N-MOSFET; WMOS™ C4; unipolar; 600V; 26A; Idm: 90A; 34W
Type of transistor: N-MOSFET
Technology: WMOS™ C4
Polarisation: unipolar
Drain-source voltage: 600V
Drain current: 26A
Pulsed drain current: 90A
Power dissipation: 34W
Case: TO220FP
Gate-source voltage: ±30V
On-state resistance: 70mΩ
Mounting: THT
Gate charge: 58nC
Kind of package: tube
Kind of channel: enhancement
кількість в упаковці: 1 шт
Category: THT N channel transistors
Description: Transistor: N-MOSFET; WMOS™ C4; unipolar; 600V; 26A; Idm: 90A; 34W
Type of transistor: N-MOSFET
Technology: WMOS™ C4
Polarisation: unipolar
Drain-source voltage: 600V
Drain current: 26A
Pulsed drain current: 90A
Power dissipation: 34W
Case: TO220FP
Gate-source voltage: ±30V
On-state resistance: 70mΩ
Mounting: THT
Gate charge: 58nC
Kind of package: tube
Kind of channel: enhancement
кількість в упаковці: 1 шт
на замовлення 24 шт:
термін постачання 14-21 дні (днів)| Кількість | Ціна |
|---|---|
| 1+ | 368.03 грн |
| 3+ | 316.69 грн |
| 10+ | 256.55 грн |
| 25+ | 230.41 грн |
| 100+ | 212.99 грн |
| 250+ | 203.30 грн |
| 500+ | 191.69 грн |
| WML53N60FD |
Виробник: WAYON
Category: THT N channel transistors
Description: Transistor: N-MOSFET; WMOS™ FD; unipolar; 600V; 53A; 34W; TO220FP
Type of transistor: N-MOSFET
Technology: WMOS™ FD
Polarisation: unipolar
Drain-source voltage: 600V
Drain current: 53A
Power dissipation: 34W
Case: TO220FP
Gate-source voltage: ±30V
On-state resistance: 78mΩ
Mounting: THT
Kind of package: tube
Kind of channel: enhancement
Category: THT N channel transistors
Description: Transistor: N-MOSFET; WMOS™ FD; unipolar; 600V; 53A; 34W; TO220FP
Type of transistor: N-MOSFET
Technology: WMOS™ FD
Polarisation: unipolar
Drain-source voltage: 600V
Drain current: 53A
Power dissipation: 34W
Case: TO220FP
Gate-source voltage: ±30V
On-state resistance: 78mΩ
Mounting: THT
Kind of package: tube
Kind of channel: enhancement
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| WML6N100D1 |
Виробник: WAYON
WML6N100D1-CYG THT N channel transistors
WML6N100D1-CYG THT N channel transistors
на замовлення 315 шт:
термін постачання 14-21 дні (днів)| Кількість | Ціна |
|---|---|
| 4+ | 84.35 грн |
| 18+ | 65.93 грн |
| 48+ | 62.25 грн |
| 2000+ | 62.23 грн |
| WML6N90D1 |
Виробник: WAYON
Category: THT N channel transistors
Description: Transistor: N-MOSFET; WMOS™ D1; unipolar; 900V; 6A; Idm: 24A; 50W
Type of transistor: N-MOSFET
Technology: WMOS™ D1
Polarisation: unipolar
Drain-source voltage: 900V
Drain current: 6A
Pulsed drain current: 24A
Power dissipation: 50W
Case: TO220FP
Gate-source voltage: ±30V
On-state resistance: 1.7Ω
Mounting: THT
Gate charge: 86.2nC
Kind of package: tube
Kind of channel: enhancement
Category: THT N channel transistors
Description: Transistor: N-MOSFET; WMOS™ D1; unipolar; 900V; 6A; Idm: 24A; 50W
Type of transistor: N-MOSFET
Technology: WMOS™ D1
Polarisation: unipolar
Drain-source voltage: 900V
Drain current: 6A
Pulsed drain current: 24A
Power dissipation: 50W
Case: TO220FP
Gate-source voltage: ±30V
On-state resistance: 1.7Ω
Mounting: THT
Gate charge: 86.2nC
Kind of package: tube
Kind of channel: enhancement
на замовлення 256 шт:
термін постачання 21-30 дні (днів)| Кількість | Ціна |
|---|---|
| 8+ | 55.60 грн |
| 10+ | 46.55 грн |
| 50+ | 41.06 грн |
| 250+ | 38.64 грн |
| WML6N90D1 |
Виробник: WAYON
Category: THT N channel transistors
Description: Transistor: N-MOSFET; WMOS™ D1; unipolar; 900V; 6A; Idm: 24A; 50W
Type of transistor: N-MOSFET
Technology: WMOS™ D1
Polarisation: unipolar
Drain-source voltage: 900V
Drain current: 6A
Pulsed drain current: 24A
Power dissipation: 50W
Case: TO220FP
Gate-source voltage: ±30V
On-state resistance: 1.7Ω
Mounting: THT
Gate charge: 86.2nC
Kind of package: tube
Kind of channel: enhancement
кількість в упаковці: 1 шт
Category: THT N channel transistors
Description: Transistor: N-MOSFET; WMOS™ D1; unipolar; 900V; 6A; Idm: 24A; 50W
Type of transistor: N-MOSFET
Technology: WMOS™ D1
Polarisation: unipolar
Drain-source voltage: 900V
Drain current: 6A
Pulsed drain current: 24A
Power dissipation: 50W
Case: TO220FP
Gate-source voltage: ±30V
On-state resistance: 1.7Ω
Mounting: THT
Gate charge: 86.2nC
Kind of package: tube
Kind of channel: enhancement
кількість в упаковці: 1 шт
на замовлення 256 шт:
термін постачання 14-21 дні (днів)| Кількість | Ціна |
|---|---|
| 5+ | 66.73 грн |
| 10+ | 58.01 грн |
| 50+ | 49.28 грн |
| 250+ | 46.37 грн |
| WML6N90D1B |
Виробник: WAYON
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 900V; 6A; TO220FP
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 900V
Drain current: 6A
Case: TO220FP
Gate-source voltage: ±30V
On-state resistance: 2.3Ω
Mounting: THT
Kind of package: tube
Kind of channel: enhancement
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 900V; 6A; TO220FP
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 900V
Drain current: 6A
Case: TO220FP
Gate-source voltage: ±30V
On-state resistance: 2.3Ω
Mounting: THT
Kind of package: tube
Kind of channel: enhancement
на замовлення 679 шт:
термін постачання 21-30 дні (днів)| Кількість | Ціна |
|---|---|
| 8+ | 56.47 грн |
| 12+ | 35.42 грн |
| 50+ | 26.70 грн |
| 250+ | 23.72 грн |
| 500+ | 20.49 грн |
| WML6N90D1B |
Виробник: WAYON
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 900V; 6A; TO220FP
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 900V
Drain current: 6A
Case: TO220FP
Gate-source voltage: ±30V
On-state resistance: 2.3Ω
Mounting: THT
Kind of package: tube
Kind of channel: enhancement
кількість в упаковці: 1 шт
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 900V; 6A; TO220FP
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 900V
Drain current: 6A
Case: TO220FP
Gate-source voltage: ±30V
On-state resistance: 2.3Ω
Mounting: THT
Kind of package: tube
Kind of channel: enhancement
кількість в упаковці: 1 шт
на замовлення 679 шт:
термін постачання 14-21 дні (днів)| Кількість | Ціна |
|---|---|
| 5+ | 67.77 грн |
| 10+ | 44.13 грн |
| 50+ | 32.04 грн |
| 250+ | 28.46 грн |
| 500+ | 24.59 грн |
| WML7N65D1B |
Виробник: WAYON
Category: THT N channel transistors
Description: Transistor: N-MOSFET; WMOS™ D1; unipolar; 650V; 7A; Idm: 28A; 63W
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 650V
Drain current: 7A
Pulsed drain current: 28A
Power dissipation: 63W
Case: TO220FP
Gate-source voltage: ±30V
On-state resistance: 1.35Ω
Mounting: THT
Gate charge: 24.3nC
Kind of package: tube
Kind of channel: enhancement
Technology: WMOS™ D1
Category: THT N channel transistors
Description: Transistor: N-MOSFET; WMOS™ D1; unipolar; 650V; 7A; Idm: 28A; 63W
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 650V
Drain current: 7A
Pulsed drain current: 28A
Power dissipation: 63W
Case: TO220FP
Gate-source voltage: ±30V
On-state resistance: 1.35Ω
Mounting: THT
Gate charge: 24.3nC
Kind of package: tube
Kind of channel: enhancement
Technology: WMOS™ D1
товару немає в наявності
В кошику
од. на суму грн.
| WML7N80D1 |
Виробник: WAYON
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 800V; 7A; Idm: 28A; 52W; TO220FP
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 800V
Drain current: 7A
Pulsed drain current: 28A
Power dissipation: 52W
Case: TO220FP
Gate-source voltage: ±30V
On-state resistance: 1.4Ω
Mounting: THT
Gate charge: 23nC
Kind of package: tube
Kind of channel: enhancement
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 800V; 7A; Idm: 28A; 52W; TO220FP
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 800V
Drain current: 7A
Pulsed drain current: 28A
Power dissipation: 52W
Case: TO220FP
Gate-source voltage: ±30V
On-state resistance: 1.4Ω
Mounting: THT
Gate charge: 23nC
Kind of package: tube
Kind of channel: enhancement
товару немає в наявності
В кошику
од. на суму грн.
| WML90R830S |
Виробник: WAYON
Category: THT N channel transistors
Description: Transistor: N-MOSFET; WMOS™ S; unipolar; 900V; 7A; 73W; TO220FP
Type of transistor: N-MOSFET
Technology: WMOS™ S
Polarisation: unipolar
Drain-source voltage: 900V
Drain current: 7A
Power dissipation: 73W
Case: TO220FP
Gate-source voltage: ±30V
On-state resistance: 0.83Ω
Mounting: THT
Kind of package: tube
Kind of channel: enhancement
Category: THT N channel transistors
Description: Transistor: N-MOSFET; WMOS™ S; unipolar; 900V; 7A; 73W; TO220FP
Type of transistor: N-MOSFET
Technology: WMOS™ S
Polarisation: unipolar
Drain-source voltage: 900V
Drain current: 7A
Power dissipation: 73W
Case: TO220FP
Gate-source voltage: ±30V
On-state resistance: 0.83Ω
Mounting: THT
Kind of package: tube
Kind of channel: enhancement
товару немає в наявності
В кошику
од. на суму грн.
| WML9N50D1B |
Виробник: WAYON
Category: THT N channel transistors
Description: Transistor: N-MOSFET; WMOS™ D1; unipolar; 500V; 9A; Idm: 36A; 45W
Type of transistor: N-MOSFET
Technology: WMOS™ D1
Polarisation: unipolar
Drain-source voltage: 500V
Drain current: 9A
Pulsed drain current: 36A
Power dissipation: 45W
Case: TO220FP
Gate-source voltage: ±30V
On-state resistance: 0.68Ω
Mounting: THT
Gate charge: 72nC
Kind of package: tube
Kind of channel: enhancement
Category: THT N channel transistors
Description: Transistor: N-MOSFET; WMOS™ D1; unipolar; 500V; 9A; Idm: 36A; 45W
Type of transistor: N-MOSFET
Technology: WMOS™ D1
Polarisation: unipolar
Drain-source voltage: 500V
Drain current: 9A
Pulsed drain current: 36A
Power dissipation: 45W
Case: TO220FP
Gate-source voltage: ±30V
On-state resistance: 0.68Ω
Mounting: THT
Gate charge: 72nC
Kind of package: tube
Kind of channel: enhancement
товару немає в наявності
В кошику
од. на суму грн.
| WMLL010N04LG4 |
![]() |
Виробник: WAYON
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 40V; 378A; Idm: 1512A; 333.3W; TOLL
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 40V
Drain current: 378A
Pulsed drain current: 1512A
Power dissipation: 333.3W
Case: TOLL
Gate-source voltage: ±20V
On-state resistance: 1.3mΩ
Mounting: SMD
Gate charge: 118nC
Kind of package: reel; tape
Kind of channel: enhancement
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 40V; 378A; Idm: 1512A; 333.3W; TOLL
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 40V
Drain current: 378A
Pulsed drain current: 1512A
Power dissipation: 333.3W
Case: TOLL
Gate-source voltage: ±20V
On-state resistance: 1.3mΩ
Mounting: SMD
Gate charge: 118nC
Kind of package: reel; tape
Kind of channel: enhancement
на замовлення 176 шт:
термін постачання 21-30 дні (днів)| Кількість | Ціна |
|---|---|
| 6+ | 79.93 грн |
| 10+ | 70.19 грн |
| 25+ | 62.12 грн |
| 100+ | 55.67 грн |
| WMLL010N04LG4 |
![]() |
Виробник: WAYON
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 40V; 378A; Idm: 1512A; 333.3W; TOLL
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 40V
Drain current: 378A
Pulsed drain current: 1512A
Power dissipation: 333.3W
Case: TOLL
Gate-source voltage: ±20V
On-state resistance: 1.3mΩ
Mounting: SMD
Gate charge: 118nC
Kind of package: reel; tape
Kind of channel: enhancement
кількість в упаковці: 1 шт
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 40V; 378A; Idm: 1512A; 333.3W; TOLL
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 40V
Drain current: 378A
Pulsed drain current: 1512A
Power dissipation: 333.3W
Case: TOLL
Gate-source voltage: ±20V
On-state resistance: 1.3mΩ
Mounting: SMD
Gate charge: 118nC
Kind of package: reel; tape
Kind of channel: enhancement
кількість в упаковці: 1 шт
на замовлення 176 шт:
термін постачання 14-21 дні (днів)| Кількість | Ціна |
|---|---|
| 4+ | 95.92 грн |
| 10+ | 87.47 грн |
| 25+ | 74.55 грн |
| 100+ | 66.80 грн |
| 500+ | 63.90 грн |
| WMLL014N06HG4 |
Виробник: WAYON
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 60V; 378A; Idm: 1512A; 454.5W; TOLL
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 60V
Drain current: 378A
Pulsed drain current: 1512A
Power dissipation: 454.5W
Case: TOLL
Gate-source voltage: ±20V
On-state resistance: 1.55mΩ
Mounting: SMD
Gate charge: 102nC
Kind of package: reel; tape
Kind of channel: enhancement
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 60V; 378A; Idm: 1512A; 454.5W; TOLL
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 60V
Drain current: 378A
Pulsed drain current: 1512A
Power dissipation: 454.5W
Case: TOLL
Gate-source voltage: ±20V
On-state resistance: 1.55mΩ
Mounting: SMD
Gate charge: 102nC
Kind of package: reel; tape
Kind of channel: enhancement
на замовлення 1 шт:
термін постачання 21-30 дні (днів)| Кількість | Ціна |
|---|---|
| 1+ | 434.41 грн |
| WMLL014N06HG4 |
Виробник: WAYON
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 60V; 378A; Idm: 1512A; 454.5W; TOLL
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 60V
Drain current: 378A
Pulsed drain current: 1512A
Power dissipation: 454.5W
Case: TOLL
Gate-source voltage: ±20V
On-state resistance: 1.55mΩ
Mounting: SMD
Gate charge: 102nC
Kind of package: reel; tape
Kind of channel: enhancement
кількість в упаковці: 1 шт
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 60V; 378A; Idm: 1512A; 454.5W; TOLL
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 60V
Drain current: 378A
Pulsed drain current: 1512A
Power dissipation: 454.5W
Case: TOLL
Gate-source voltage: ±20V
On-state resistance: 1.55mΩ
Mounting: SMD
Gate charge: 102nC
Kind of package: reel; tape
Kind of channel: enhancement
кількість в упаковці: 1 шт
на замовлення 1 шт:
термін постачання 14-21 дні (днів)| Кількість | Ціна |
|---|---|
| 1+ | 312.78 грн |
| 10+ | 121.65 грн |
| 25+ | 103.59 грн |
| 100+ | 96.81 грн |
| WMLL017N10HGS |
Виробник: WAYON
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 60V; 378A; Idm: 1512A; 454.5W; TOLL
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 60V
Drain current: 378A
Pulsed drain current: 1512A
Power dissipation: 454.5W
Case: TOLL
Gate-source voltage: ±20V
On-state resistance: 1.55mΩ
Mounting: SMD
Gate charge: 102nC
Kind of package: reel; tape
Kind of channel: enhancement
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 60V; 378A; Idm: 1512A; 454.5W; TOLL
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 60V
Drain current: 378A
Pulsed drain current: 1512A
Power dissipation: 454.5W
Case: TOLL
Gate-source voltage: ±20V
On-state resistance: 1.55mΩ
Mounting: SMD
Gate charge: 102nC
Kind of package: reel; tape
Kind of channel: enhancement
на замовлення 2 шт:
термін постачання 21-30 дні (днів)| Кількість | Ціна |
|---|---|
| 2+ | 217.21 грн |
| WMLL017N10HGS |
Виробник: WAYON
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 60V; 378A; Idm: 1512A; 454.5W; TOLL
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 60V
Drain current: 378A
Pulsed drain current: 1512A
Power dissipation: 454.5W
Case: TOLL
Gate-source voltage: ±20V
On-state resistance: 1.55mΩ
Mounting: SMD
Gate charge: 102nC
Kind of package: reel; tape
Kind of channel: enhancement
кількість в упаковці: 1 шт
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 60V; 378A; Idm: 1512A; 454.5W; TOLL
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 60V
Drain current: 378A
Pulsed drain current: 1512A
Power dissipation: 454.5W
Case: TOLL
Gate-source voltage: ±20V
On-state resistance: 1.55mΩ
Mounting: SMD
Gate charge: 102nC
Kind of package: reel; tape
Kind of channel: enhancement
кількість в упаковці: 1 шт
на замовлення 2 шт:
термін постачання 14-21 дні (днів)| Кількість | Ціна |
|---|---|
| 2+ | 186.62 грн |
| 10+ | 168.90 грн |
| 25+ | 144.25 грн |
| 100+ | 131.66 грн |
| WMLL020N10HG4 |
Виробник: WAYON
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 100V; 304A; Idm: 1216A; 468.7W; TOLL
Mounting: SMD
Kind of channel: enhancement
Type of transistor: N-MOSFET
Polarisation: unipolar
Gate charge: 125nC
On-state resistance: 2mΩ
Gate-source voltage: ±20V
Power dissipation: 468.7W
Drain-source voltage: 100V
Drain current: 304A
Pulsed drain current: 1216A
Case: TOLL
Kind of package: reel; tape
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 100V; 304A; Idm: 1216A; 468.7W; TOLL
Mounting: SMD
Kind of channel: enhancement
Type of transistor: N-MOSFET
Polarisation: unipolar
Gate charge: 125nC
On-state resistance: 2mΩ
Gate-source voltage: ±20V
Power dissipation: 468.7W
Drain-source voltage: 100V
Drain current: 304A
Pulsed drain current: 1216A
Case: TOLL
Kind of package: reel; tape
на замовлення 8 шт:
термін постачання 21-30 дні (днів)| Кількість | Ціна |
|---|---|
| 3+ | 175.50 грн |
| WMLL020N10HG4 |
Виробник: WAYON
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 100V; 304A; Idm: 1216A; 468.7W; TOLL
Mounting: SMD
Kind of channel: enhancement
Type of transistor: N-MOSFET
Polarisation: unipolar
Gate charge: 125nC
On-state resistance: 2mΩ
Gate-source voltage: ±20V
Power dissipation: 468.7W
Drain-source voltage: 100V
Drain current: 304A
Pulsed drain current: 1216A
Case: TOLL
Kind of package: reel; tape
кількість в упаковці: 1 шт
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 100V; 304A; Idm: 1216A; 468.7W; TOLL
Mounting: SMD
Kind of channel: enhancement
Type of transistor: N-MOSFET
Polarisation: unipolar
Gate charge: 125nC
On-state resistance: 2mΩ
Gate-source voltage: ±20V
Power dissipation: 468.7W
Drain-source voltage: 100V
Drain current: 304A
Pulsed drain current: 1216A
Case: TOLL
Kind of package: reel; tape
кількість в упаковці: 1 шт
на замовлення 8 шт:
термін постачання 14-21 дні (днів)| Кількість | Ціна |
|---|---|
| 2+ | 210.60 грн |
| 10+ | 192.02 грн |
| 25+ | 163.61 грн |
| 100+ | 147.15 грн |
| 500+ | 143.28 грн |
| WMLL020N10HGS |
Виробник: WAYON
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 100V; 200A; Idm: 1248A; 390.6W; TOLL
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 100V
Drain current: 200A
Pulsed drain current: 1248A
Power dissipation: 390.6W
Case: TOLL
Gate-source voltage: ±20V
On-state resistance: 2mΩ
Mounting: SMD
Gate charge: 250nC
Kind of package: reel; tape
Kind of channel: enhancement
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 100V; 200A; Idm: 1248A; 390.6W; TOLL
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 100V
Drain current: 200A
Pulsed drain current: 1248A
Power dissipation: 390.6W
Case: TOLL
Gate-source voltage: ±20V
On-state resistance: 2mΩ
Mounting: SMD
Gate charge: 250nC
Kind of package: reel; tape
Kind of channel: enhancement
на замовлення 22 шт:
термін постачання 21-30 дні (днів)| Кількість | Ціна |
|---|---|
| 4+ | 139.01 грн |
| 10+ | 122.63 грн |
| WMLL020N10HGS |
Виробник: WAYON
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 100V; 200A; Idm: 1248A; 390.6W; TOLL
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 100V
Drain current: 200A
Pulsed drain current: 1248A
Power dissipation: 390.6W
Case: TOLL
Gate-source voltage: ±20V
On-state resistance: 2mΩ
Mounting: SMD
Gate charge: 250nC
Kind of package: reel; tape
Kind of channel: enhancement
кількість в упаковці: 1 шт
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 100V; 200A; Idm: 1248A; 390.6W; TOLL
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 100V
Drain current: 200A
Pulsed drain current: 1248A
Power dissipation: 390.6W
Case: TOLL
Gate-source voltage: ±20V
On-state resistance: 2mΩ
Mounting: SMD
Gate charge: 250nC
Kind of package: reel; tape
Kind of channel: enhancement
кількість в упаковці: 1 шт
на замовлення 22 шт:
термін постачання 14-21 дні (днів)| Кількість | Ціна |
|---|---|
| 2+ | 166.81 грн |
| 10+ | 152.81 грн |
| 25+ | 128.76 грн |
| 100+ | 121.01 грн |
| WMLL020NV8HGS |
Виробник: WAYON
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 85V; 190A; Idm: 1200A; 347.2W; TOLL
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 85V
Drain current: 190A
Pulsed drain current: 1.2kA
Power dissipation: 347.2W
Case: TOLL
Gate-source voltage: ±20V
On-state resistance: 2.2mΩ
Mounting: SMD
Gate charge: 142nC
Kind of package: reel; tape
Kind of channel: enhancement
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 85V; 190A; Idm: 1200A; 347.2W; TOLL
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 85V
Drain current: 190A
Pulsed drain current: 1.2kA
Power dissipation: 347.2W
Case: TOLL
Gate-source voltage: ±20V
On-state resistance: 2.2mΩ
Mounting: SMD
Gate charge: 142nC
Kind of package: reel; tape
Kind of channel: enhancement
на замовлення 40 шт:
термін постачання 21-30 дні (днів)| Кількість | Ціна |
|---|---|
| 4+ | 122.50 грн |
| 10+ | 107.30 грн |
| 25+ | 95.20 грн |
| WMLL020NV8HGS |
Виробник: WAYON
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 85V; 190A; Idm: 1200A; 347.2W; TOLL
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 85V
Drain current: 190A
Pulsed drain current: 1.2kA
Power dissipation: 347.2W
Case: TOLL
Gate-source voltage: ±20V
On-state resistance: 2.2mΩ
Mounting: SMD
Gate charge: 142nC
Kind of package: reel; tape
Kind of channel: enhancement
кількість в упаковці: 1 шт
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 85V; 190A; Idm: 1200A; 347.2W; TOLL
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 85V
Drain current: 190A
Pulsed drain current: 1.2kA
Power dissipation: 347.2W
Case: TOLL
Gate-source voltage: ±20V
On-state resistance: 2.2mΩ
Mounting: SMD
Gate charge: 142nC
Kind of package: reel; tape
Kind of channel: enhancement
кількість в упаковці: 1 шт
на замовлення 40 шт:
термін постачання 14-21 дні (днів)| Кількість | Ціна |
|---|---|
| 3+ | 147.00 грн |
| 10+ | 133.71 грн |
| 25+ | 114.24 грн |
| 100+ | 102.62 грн |
| 500+ | 100.68 грн |
| WMLL025N10HGS |
Виробник: WAYON
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 100V; 260A; Idm: 1040A; 347.2W; TOLL
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 100V
Drain current: 260A
Pulsed drain current: 1040A
Power dissipation: 347.2W
Case: TOLL
Gate-source voltage: ±20V
On-state resistance: 2.6mΩ
Mounting: SMD
Gate charge: 150nC
Kind of package: reel; tape
Kind of channel: enhancement
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 100V; 260A; Idm: 1040A; 347.2W; TOLL
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 100V
Drain current: 260A
Pulsed drain current: 1040A
Power dissipation: 347.2W
Case: TOLL
Gate-source voltage: ±20V
On-state resistance: 2.6mΩ
Mounting: SMD
Gate charge: 150nC
Kind of package: reel; tape
Kind of channel: enhancement
на замовлення 23 шт:
термін постачання 21-30 дні (днів)| Кількість | Ціна |
|---|---|
| 5+ | 101.65 грн |
| 10+ | 90.36 грн |
| WMLL025N10HGS |
Виробник: WAYON
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 100V; 260A; Idm: 1040A; 347.2W; TOLL
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 100V
Drain current: 260A
Pulsed drain current: 1040A
Power dissipation: 347.2W
Case: TOLL
Gate-source voltage: ±20V
On-state resistance: 2.6mΩ
Mounting: SMD
Gate charge: 150nC
Kind of package: reel; tape
Kind of channel: enhancement
кількість в упаковці: 1 шт
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 100V; 260A; Idm: 1040A; 347.2W; TOLL
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 100V
Drain current: 260A
Pulsed drain current: 1040A
Power dissipation: 347.2W
Case: TOLL
Gate-source voltage: ±20V
On-state resistance: 2.6mΩ
Mounting: SMD
Gate charge: 150nC
Kind of package: reel; tape
Kind of channel: enhancement
кількість в упаковці: 1 шт
на замовлення 23 шт:
термін постачання 14-21 дні (днів)| Кількість | Ціна |
|---|---|
| 3+ | 121.98 грн |
| 10+ | 112.60 грн |
| 25+ | 95.84 грн |
| 100+ | 88.10 грн |
| WMLL030N12HGS |
Виробник: WAYON
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 120V; 225A; Idm: 900A; 365.8W; TOLL
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 120V
Drain current: 225A
Pulsed drain current: 900A
Power dissipation: 365.8W
Case: TOLL
Gate-source voltage: ±20V
On-state resistance: 3.3mΩ
Mounting: SMD
Gate charge: 144nC
Kind of package: reel; tape
Kind of channel: enhancement
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 120V; 225A; Idm: 900A; 365.8W; TOLL
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 120V
Drain current: 225A
Pulsed drain current: 900A
Power dissipation: 365.8W
Case: TOLL
Gate-source voltage: ±20V
On-state resistance: 3.3mΩ
Mounting: SMD
Gate charge: 144nC
Kind of package: reel; tape
Kind of channel: enhancement
на замовлення 205 шт:
термін постачання 21-30 дні (днів)| Кількість | Ціна |
|---|---|
| 5+ | 87.75 грн |
| 10+ | 77.45 грн |
| 25+ | 68.58 грн |
| 100+ | 61.31 грн |
| WMLL030N12HGS |
Виробник: WAYON
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 120V; 225A; Idm: 900A; 365.8W; TOLL
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 120V
Drain current: 225A
Pulsed drain current: 900A
Power dissipation: 365.8W
Case: TOLL
Gate-source voltage: ±20V
On-state resistance: 3.3mΩ
Mounting: SMD
Gate charge: 144nC
Kind of package: reel; tape
Kind of channel: enhancement
кількість в упаковці: 1 шт
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 120V; 225A; Idm: 900A; 365.8W; TOLL
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 120V
Drain current: 225A
Pulsed drain current: 900A
Power dissipation: 365.8W
Case: TOLL
Gate-source voltage: ±20V
On-state resistance: 3.3mΩ
Mounting: SMD
Gate charge: 144nC
Kind of package: reel; tape
Kind of channel: enhancement
кількість в упаковці: 1 шт
на замовлення 205 шт:
термін постачання 14-21 дні (днів)| Кількість | Ціна |
|---|---|
| 3+ | 105.30 грн |
| 10+ | 96.51 грн |
| 25+ | 82.29 грн |
| 100+ | 73.58 грн |
| 500+ | 70.67 грн |
| WMLL040N15HG2 |
Виробник: WAYON
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 150V; 160A; Idm: 908A; 500W; TOLL
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 150V
Drain current: 160A
Pulsed drain current: 908A
Power dissipation: 500W
Case: TOLL
Gate-source voltage: ±20V
On-state resistance: 4.2mΩ
Mounting: SMD
Gate charge: 74.3nC
Kind of package: reel; tape
Kind of channel: enhancement
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 150V; 160A; Idm: 908A; 500W; TOLL
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 150V
Drain current: 160A
Pulsed drain current: 908A
Power dissipation: 500W
Case: TOLL
Gate-source voltage: ±20V
On-state resistance: 4.2mΩ
Mounting: SMD
Gate charge: 74.3nC
Kind of package: reel; tape
Kind of channel: enhancement
на замовлення 32 шт:
термін постачання 21-30 дні (днів)| Кількість | Ціна |
|---|---|
| 2+ | 334.50 грн |
| 10+ | 292.86 грн |
| 25+ | 259.78 грн |
| WMLL040N15HG2 |
Виробник: WAYON
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 150V; 160A; Idm: 908A; 500W; TOLL
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 150V
Drain current: 160A
Pulsed drain current: 908A
Power dissipation: 500W
Case: TOLL
Gate-source voltage: ±20V
On-state resistance: 4.2mΩ
Mounting: SMD
Gate charge: 74.3nC
Kind of package: reel; tape
Kind of channel: enhancement
кількість в упаковці: 1 шт
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 150V; 160A; Idm: 908A; 500W; TOLL
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 150V
Drain current: 160A
Pulsed drain current: 908A
Power dissipation: 500W
Case: TOLL
Gate-source voltage: ±20V
On-state resistance: 4.2mΩ
Mounting: SMD
Gate charge: 74.3nC
Kind of package: reel; tape
Kind of channel: enhancement
кількість в упаковці: 1 шт
на замовлення 32 шт:
термін постачання 14-21 дні (днів)| Кількість | Ціна |
|---|---|
| 1+ | 401.40 грн |
| 10+ | 364.94 грн |
| 25+ | 311.73 грн |
| 100+ | 278.82 грн |
| 500+ | 269.14 грн |
| WMLL065N15HG2 |
Виробник: WAYON
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 150V; 172A; Idm: 688A; 394.7W; TOLL
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 150V
Drain current: 172A
Pulsed drain current: 688A
Power dissipation: 394.7W
Case: TOLL
Gate-source voltage: ±20V
On-state resistance: 6mΩ
Mounting: SMD
Gate charge: 85nC
Kind of package: reel; tape
Kind of channel: enhancement
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 150V; 172A; Idm: 688A; 394.7W; TOLL
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 150V
Drain current: 172A
Pulsed drain current: 688A
Power dissipation: 394.7W
Case: TOLL
Gate-source voltage: ±20V
On-state resistance: 6mΩ
Mounting: SMD
Gate charge: 85nC
Kind of package: reel; tape
Kind of channel: enhancement
товару немає в наявності
В кошику
од. на суму грн.
| WMLL065N15HG2 |
Виробник: WAYON
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 150V; 172A; Idm: 688A; 394.7W; TOLL
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 150V
Drain current: 172A
Pulsed drain current: 688A
Power dissipation: 394.7W
Case: TOLL
Gate-source voltage: ±20V
On-state resistance: 6mΩ
Mounting: SMD
Gate charge: 85nC
Kind of package: reel; tape
Kind of channel: enhancement
кількість в упаковці: 1 шт
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 150V; 172A; Idm: 688A; 394.7W; TOLL
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 150V
Drain current: 172A
Pulsed drain current: 688A
Power dissipation: 394.7W
Case: TOLL
Gate-source voltage: ±20V
On-state resistance: 6mΩ
Mounting: SMD
Gate charge: 85nC
Kind of package: reel; tape
Kind of channel: enhancement
кількість в упаковці: 1 шт
товару немає в наявності
В кошику
од. на суму грн.
| WMLL099N20HG2 |
Виробник: WAYON
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 200V; 90A; Idm: 568A; 500W; TOLL
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 200V
Drain current: 90A
Pulsed drain current: 568A
Power dissipation: 500W
Case: TOLL
Gate-source voltage: ±20V
On-state resistance: 10.5mΩ
Mounting: SMD
Gate charge: 68.5nC
Kind of package: reel; tape
Kind of channel: enhancement
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 200V; 90A; Idm: 568A; 500W; TOLL
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 200V
Drain current: 90A
Pulsed drain current: 568A
Power dissipation: 500W
Case: TOLL
Gate-source voltage: ±20V
On-state resistance: 10.5mΩ
Mounting: SMD
Gate charge: 68.5nC
Kind of package: reel; tape
Kind of channel: enhancement
на замовлення 32 шт:
термін постачання 21-30 дні (днів)| Кількість | Ціна |
|---|---|
| 2+ | 388.36 грн |
| 10+ | 340.45 грн |
| 25+ | 301.73 грн |
| WMLL099N20HG2 |
Виробник: WAYON
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 200V; 90A; Idm: 568A; 500W; TOLL
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 200V
Drain current: 90A
Pulsed drain current: 568A
Power dissipation: 500W
Case: TOLL
Gate-source voltage: ±20V
On-state resistance: 10.5mΩ
Mounting: SMD
Gate charge: 68.5nC
Kind of package: reel; tape
Kind of channel: enhancement
кількість в упаковці: 1 шт
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 200V; 90A; Idm: 568A; 500W; TOLL
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 200V
Drain current: 90A
Pulsed drain current: 568A
Power dissipation: 500W
Case: TOLL
Gate-source voltage: ±20V
On-state resistance: 10.5mΩ
Mounting: SMD
Gate charge: 68.5nC
Kind of package: reel; tape
Kind of channel: enhancement
кількість в упаковці: 1 шт
на замовлення 32 шт:
термін постачання 14-21 дні (днів)| Кількість | Ціна |
|---|---|
| 1+ | 466.04 грн |
| 10+ | 424.26 грн |
| 25+ | 362.08 грн |
| 100+ | 324.32 грн |
| 500+ | 313.67 грн |
| WMLL130N20JN |
![]() |
Виробник: WAYON
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 200V; 117A; Idm: 620A; 416W; TOLL
Case: TOLL
Mounting: SMD
Kind of channel: enhancement
Type of transistor: N-MOSFET
Polarisation: unipolar
Gate-source voltage: ±20V
Gate charge: 188nC
Reverse recovery time: 196ns
On-state resistance: 5.2mΩ
Power dissipation: 416W
Drain current: 117A
Drain-source voltage: 200V
Pulsed drain current: 620A
Kind of package: reel; tape
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 200V; 117A; Idm: 620A; 416W; TOLL
Case: TOLL
Mounting: SMD
Kind of channel: enhancement
Type of transistor: N-MOSFET
Polarisation: unipolar
Gate-source voltage: ±20V
Gate charge: 188nC
Reverse recovery time: 196ns
On-state resistance: 5.2mΩ
Power dissipation: 416W
Drain current: 117A
Drain-source voltage: 200V
Pulsed drain current: 620A
Kind of package: reel; tape
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В кошику
од. на суму грн.
| WMLL130N25JN |
![]() |
Виробник: WAYON
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 250V; 96A; Idm: 435A; 312W; TOLL
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 250V
Drain current: 96A
Pulsed drain current: 435A
Power dissipation: 312W
Case: TOLL
Gate-source voltage: ±20V
On-state resistance: 8.4mΩ
Mounting: SMD
Gate charge: 121nC
Kind of package: reel; tape
Kind of channel: enhancement
Reverse recovery time: 195ns
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 250V; 96A; Idm: 435A; 312W; TOLL
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 250V
Drain current: 96A
Pulsed drain current: 435A
Power dissipation: 312W
Case: TOLL
Gate-source voltage: ±20V
On-state resistance: 8.4mΩ
Mounting: SMD
Gate charge: 121nC
Kind of package: reel; tape
Kind of channel: enhancement
Reverse recovery time: 195ns
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од. на суму грн.
| WMLL160N25JN |
![]() |
Виробник: WAYON
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 250V; 96A; Idm: 580A; 416W; TOLL
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 250V
Drain current: 96A
Pulsed drain current: 580A
Power dissipation: 416W
Case: TOLL
Gate-source voltage: ±20V
On-state resistance: 6.3mΩ
Mounting: SMD
Gate charge: 185nC
Kind of package: reel; tape
Kind of channel: enhancement
Reverse recovery time: 260ns
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 250V; 96A; Idm: 580A; 416W; TOLL
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 250V
Drain current: 96A
Pulsed drain current: 580A
Power dissipation: 416W
Case: TOLL
Gate-source voltage: ±20V
On-state resistance: 6.3mΩ
Mounting: SMD
Gate charge: 185nC
Kind of package: reel; tape
Kind of channel: enhancement
Reverse recovery time: 260ns
товару немає в наявності
В кошику
од. на суму грн.













