| Фото | Назва | Виробник | Інформація |
Доступність |
Ціна |
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WMM16N70C2 | WAYON |
Category: SMD N channel transistorsDescription: Transistor: N-MOSFET; WMOS™ C2; unipolar; 700V; 12A; 86W; TO263 Type of transistor: N-MOSFET Technology: WMOS™ C2 Polarisation: unipolar Drain-source voltage: 700V Drain current: 12A Power dissipation: 86W Case: TO263 Gate-source voltage: ±30V On-state resistance: 0.42Ω Mounting: SMD Kind of package: reel; tape Kind of channel: enhancement |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||||||||
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WMM180N03TS | WAYON |
Category: SMD N channel transistors Description: Transistor: N-MOSFET; unipolar; 30V; 180A; Idm: 720A; 181W; TO263 Type of transistor: N-MOSFET Polarisation: unipolar Drain-source voltage: 30V Drain current: 180A Pulsed drain current: 720A Power dissipation: 181W Case: TO263 Gate-source voltage: ±20V On-state resistance: 3.5mΩ Mounting: SMD Gate charge: 32nC Kind of package: reel; tape Kind of channel: enhancement |
на замовлення 76 шт: термін постачання 21-30 дні (днів) |
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WMM180N03TS | WAYON |
Category: SMD N channel transistors Description: Transistor: N-MOSFET; unipolar; 30V; 180A; Idm: 720A; 181W; TO263 Type of transistor: N-MOSFET Polarisation: unipolar Drain-source voltage: 30V Drain current: 180A Pulsed drain current: 720A Power dissipation: 181W Case: TO263 Gate-source voltage: ±20V On-state resistance: 3.5mΩ Mounting: SMD Gate charge: 32nC Kind of package: reel; tape Kind of channel: enhancement кількість в упаковці: 1 шт |
на замовлення 76 шт: термін постачання 14-21 дні (днів) |
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| WMM18N20JN | WAYON |
Category: SMD N channel transistorsDescription: Transistor: N-MOSFET; unipolar; 200V; 7A; Idm: 39A; 36W; TO263; 80ns Case: TO263 Mounting: SMD Reverse recovery time: 80ns On-state resistance: 135mΩ Drain current: 7A Gate-source voltage: ±20V Power dissipation: 36W Pulsed drain current: 39A Drain-source voltage: 200V Kind of channel: enhancement Type of transistor: N-MOSFET Kind of package: reel; tape Polarisation: unipolar Gate charge: 7.2nC |
товару немає в наявності |
В кошику од. на суму грн. | |||||||||||||||
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WMM190N03TS | WAYON |
Category: SMD N channel transistors Description: Transistor: N-MOSFET; unipolar; 30V; 190A; Idm: 760A; 192W; TO263 Type of transistor: N-MOSFET Polarisation: unipolar Drain-source voltage: 30V Case: TO263 Gate-source voltage: ±20V On-state resistance: 2.6mΩ Mounting: SMD Kind of package: reel; tape Kind of channel: enhancement Power dissipation: 192W Drain current: 190A Pulsed drain current: 760A Gate charge: 0.1µC |
на замовлення 79 шт: термін постачання 21-30 дні (днів) |
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WMM190N03TS | WAYON |
Category: SMD N channel transistors Description: Transistor: N-MOSFET; unipolar; 30V; 190A; Idm: 760A; 192W; TO263 Type of transistor: N-MOSFET Polarisation: unipolar Drain-source voltage: 30V Case: TO263 Gate-source voltage: ±20V On-state resistance: 2.6mΩ Mounting: SMD Kind of package: reel; tape Kind of channel: enhancement Power dissipation: 192W Drain current: 190A Pulsed drain current: 760A Gate charge: 0.1µC кількість в упаковці: 1 шт |
на замовлення 79 шт: термін постачання 14-21 дні (днів) |
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| WMM20N20JN | WAYON | WMM20N20JN-CYG SMD N channel transistors |
на замовлення 600 шт: термін постачання 14-21 дні (днів) |
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WMM20N60C2 | WAYON |
Category: SMD N channel transistors Description: Transistor: N-MOSFET; WMOS™ C2; unipolar; 600V; 15A; 86W; TO263 Type of transistor: N-MOSFET Technology: WMOS™ C2 Polarisation: unipolar Drain-source voltage: 600V Drain current: 15A Power dissipation: 86W Case: TO263 Gate-source voltage: ±30V On-state resistance: 0.3Ω Mounting: SMD Kind of package: reel; tape Kind of channel: enhancement |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||||||||
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WMM220N20HG3 | WAYON |
Category: SMD N channel transistors Description: Transistor: N-MOSFET; unipolar; 200V; 78A; Idm: 312A; 312.5W; TO263 Type of transistor: N-MOSFET Polarisation: unipolar Drain-source voltage: 200V Drain current: 78A Pulsed drain current: 312A Power dissipation: 312.5W Case: TO263 Gate-source voltage: ±20V On-state resistance: 22mΩ Mounting: SMD Gate charge: 37nC Kind of package: reel; tape Kind of channel: enhancement |
на замовлення 17 шт: термін постачання 21-30 дні (днів) |
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WMM220N20HG3 | WAYON |
Category: SMD N channel transistors Description: Transistor: N-MOSFET; unipolar; 200V; 78A; Idm: 312A; 312.5W; TO263 Type of transistor: N-MOSFET Polarisation: unipolar Drain-source voltage: 200V Drain current: 78A Pulsed drain current: 312A Power dissipation: 312.5W Case: TO263 Gate-source voltage: ±20V On-state resistance: 22mΩ Mounting: SMD Gate charge: 37nC Kind of package: reel; tape Kind of channel: enhancement кількість в упаковці: 1 шт |
на замовлення 17 шт: термін постачання 14-21 дні (днів) |
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| WMM240P10HG4 | WAYON | WMM240P10HG4-CYG SMD P channel transistors |
на замовлення 66 шт: термін постачання 14-21 дні (днів) |
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| WMM25N80M3 | WAYON | WMM25N80M3-CYG SMD N channel transistors |
на замовлення 359 шт: термін постачання 14-21 дні (днів) |
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WMM26N60C4 | WAYON |
Category: SMD N channel transistors Description: Transistor: N-MOSFET; WMOS™ C4; unipolar; 600V; 10.5A; Idm: 40A Type of transistor: N-MOSFET Technology: WMOS™ C4 Polarisation: unipolar Drain-source voltage: 600V Drain current: 10.5A Pulsed drain current: 40A Power dissipation: 135W Case: TO263 Gate-source voltage: ±30V On-state resistance: 0.19Ω Mounting: SMD Gate charge: 22.1nC Kind of package: reel; tape Kind of channel: enhancement |
на замовлення 780 шт: термін постачання 21-30 дні (днів) |
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WMM26N60C4 | WAYON |
Category: SMD N channel transistors Description: Transistor: N-MOSFET; WMOS™ C4; unipolar; 600V; 10.5A; Idm: 40A Type of transistor: N-MOSFET Technology: WMOS™ C4 Polarisation: unipolar Drain-source voltage: 600V Drain current: 10.5A Pulsed drain current: 40A Power dissipation: 135W Case: TO263 Gate-source voltage: ±30V On-state resistance: 0.19Ω Mounting: SMD Gate charge: 22.1nC Kind of package: reel; tape Kind of channel: enhancement кількість в упаковці: 1 шт |
на замовлення 780 шт: термін постачання 14-21 дні (днів) |
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WMM26N60F2 | WAYON |
Category: SMD N channel transistors Description: Transistor: N-MOSFET; WMOS™ F2; unipolar; 600V; 10.5A; Idm: 40A Type of transistor: N-MOSFET Technology: WMOS™ F2 Polarisation: unipolar Drain-source voltage: 600V Drain current: 10.5A Pulsed drain current: 40A Power dissipation: 135W Case: TO263 Gate-source voltage: ±30V On-state resistance: 0.21Ω Mounting: SMD Gate charge: 22.1nC Kind of package: reel; tape Kind of channel: enhancement |
на замовлення 796 шт: термін постачання 21-30 дні (днів) |
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WMM26N60F2 | WAYON |
Category: SMD N channel transistors Description: Transistor: N-MOSFET; WMOS™ F2; unipolar; 600V; 10.5A; Idm: 40A Type of transistor: N-MOSFET Technology: WMOS™ F2 Polarisation: unipolar Drain-source voltage: 600V Drain current: 10.5A Pulsed drain current: 40A Power dissipation: 135W Case: TO263 Gate-source voltage: ±30V On-state resistance: 0.21Ω Mounting: SMD Gate charge: 22.1nC Kind of package: reel; tape Kind of channel: enhancement кількість в упаковці: 1 шт |
на замовлення 796 шт: термін постачання 14-21 дні (днів) |
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WMM26N60FD | WAYON |
Category: SMD N channel transistorsDescription: Transistor: N-MOSFET; WMOS™ FD; unipolar; 600V; 20A; 147W; TO263 Type of transistor: N-MOSFET Technology: WMOS™ FD Polarisation: unipolar Drain-source voltage: 600V Drain current: 20A Power dissipation: 147W Case: TO263 Gate-source voltage: ±30V On-state resistance: 0.2Ω Mounting: SMD Kind of package: reel; tape Kind of channel: enhancement |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||||||||
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WMM26N65FD | WAYON |
Category: SMD N channel transistorsDescription: Transistor: N-MOSFET; WMOS™ FD; unipolar; 650V; 20A; 147W; TO263 Type of transistor: N-MOSFET Technology: WMOS™ FD Polarisation: unipolar Drain-source voltage: 650V Drain current: 20A Power dissipation: 147W Case: TO263 Gate-source voltage: ±30V On-state resistance: 0.2Ω Mounting: SMD Kind of package: reel; tape Kind of channel: enhancement |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||||||||
| WMM26N65SR | WAYON |
Category: SMD N channel transistors Description: Transistor: N-MOSFET; WMOS™ SR; unipolar; 650V; 12A; Idm: 50A; 147W Type of transistor: N-MOSFET Technology: WMOS™ SR Polarisation: unipolar Drain-source voltage: 650V Drain current: 12A Pulsed drain current: 50A Power dissipation: 147W Case: TO263 Gate-source voltage: ±30V On-state resistance: 198mΩ Mounting: SMD Gate charge: 34.7nC Kind of package: reel; tape Kind of channel: enhancement |
товару немає в наявності |
В кошику од. на суму грн. | |||||||||||||||
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WMM28N60C4 | WAYON |
Category: SMD N channel transistorsDescription: Transistor: N-MOSFET; WMOS™ C4; unipolar; 600V; 13A; Idm: 65A; 160W Type of transistor: N-MOSFET Technology: WMOS™ C4 Polarisation: unipolar Drain-source voltage: 600V Drain current: 13A Pulsed drain current: 65A Power dissipation: 160W Case: TO263 Gate-source voltage: ±30V On-state resistance: 0.16Ω Mounting: SMD Gate charge: 27.3nC Kind of package: reel; tape Kind of channel: enhancement |
на замовлення 800 шт: термін постачання 21-30 дні (днів) |
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WMM28N60C4 | WAYON |
Category: SMD N channel transistorsDescription: Transistor: N-MOSFET; WMOS™ C4; unipolar; 600V; 13A; Idm: 65A; 160W Type of transistor: N-MOSFET Technology: WMOS™ C4 Polarisation: unipolar Drain-source voltage: 600V Drain current: 13A Pulsed drain current: 65A Power dissipation: 160W Case: TO263 Gate-source voltage: ±30V On-state resistance: 0.16Ω Mounting: SMD Gate charge: 27.3nC Kind of package: reel; tape Kind of channel: enhancement кількість в упаковці: 1 шт |
на замовлення 800 шт: термін постачання 14-21 дні (днів) |
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| WMM30N25JN | WAYON |
Category: SMD N channel transistorsDescription: Transistor: N-MOSFET; unipolar; 250V; 12A; Idm: 63A; 59W; TO263 Type of transistor: N-MOSFET Polarisation: unipolar Drain-source voltage: 250V Drain current: 12A Pulsed drain current: 63A Power dissipation: 59W Case: TO263 Gate-source voltage: ±20V On-state resistance: 99mΩ Mounting: SMD Gate charge: 9.8nC Kind of package: reel; tape Kind of channel: enhancement Reverse recovery time: 133ns |
товару немає в наявності |
В кошику од. на суму грн. | |||||||||||||||
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WMM340N20HG2 | WAYON |
Category: SMD N channel transistors Description: Transistor: N-MOSFET; unipolar; 200V; 50A; Idm: 148A; 173.6W; TO263 Type of transistor: N-MOSFET Polarisation: unipolar Drain-source voltage: 200V Drain current: 50A Pulsed drain current: 148A Power dissipation: 173.6W Case: TO263 Gate-source voltage: ±20V On-state resistance: 34mΩ Mounting: SMD Gate charge: 23nC Kind of package: reel; tape Kind of channel: enhancement |
на замовлення 40 шт: термін постачання 21-30 дні (днів) |
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WMM340N20HG2 | WAYON |
Category: SMD N channel transistors Description: Transistor: N-MOSFET; unipolar; 200V; 50A; Idm: 148A; 173.6W; TO263 Type of transistor: N-MOSFET Polarisation: unipolar Drain-source voltage: 200V Drain current: 50A Pulsed drain current: 148A Power dissipation: 173.6W Case: TO263 Gate-source voltage: ±20V On-state resistance: 34mΩ Mounting: SMD Gate charge: 23nC Kind of package: reel; tape Kind of channel: enhancement кількість в упаковці: 1 шт |
на замовлення 40 шт: термін постачання 14-21 дні (днів) |
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| WMM36N60C4 | WAYON |
Category: SMD N channel transistorsDescription: Transistor: N-MOSFET; WMOS™ C4; unipolar; 600V; 20A; Idm: 100A; 277W Type of transistor: N-MOSFET Technology: WMOS™ C4 Polarisation: unipolar Drain-source voltage: 600V Drain current: 20A Pulsed drain current: 100A Power dissipation: 277W Case: TO263 Gate-source voltage: ±30V On-state resistance: 97mΩ Mounting: SMD Gate charge: 46nC Kind of package: reel; tape Kind of channel: enhancement |
товару немає в наявності |
В кошику од. на суму грн. | |||||||||||||||
| WMM36N60F2 | WAYON |
Category: SMD N channel transistors Description: Transistor: N-MOSFET; WMOS™ F2; unipolar; 600V; 20A; Idm: 100A; 277W Type of transistor: N-MOSFET Technology: WMOS™ F2 Polarisation: unipolar Drain-source voltage: 600V Drain current: 20A Power dissipation: 277W Case: TO263 Gate-source voltage: ±30V On-state resistance: 0.11Ω Mounting: SMD Kind of package: reel; tape Kind of channel: enhancement Pulsed drain current: 100A Gate charge: 46nC |
товару немає в наявності |
В кошику од. на суму грн. | |||||||||||||||
| WMM36N65C4 | WAYON |
Category: SMD N channel transistors Description: Transistor: N-MOSFET; WMOS™ C4; unipolar; 650V; 20A; Idm: 100A; 277W Type of transistor: N-MOSFET Technology: WMOS™ C4 Polarisation: unipolar Drain-source voltage: 650V Drain current: 20A Pulsed drain current: 100A Power dissipation: 277W Case: TO263 Gate-source voltage: ±30V On-state resistance: 97mΩ Mounting: SMD Gate charge: 46nC Kind of package: reel; tape Kind of channel: enhancement |
товару немає в наявності |
В кошику од. на суму грн. | |||||||||||||||
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WMM38N60C2 | WAYON |
Category: SMD N channel transistorsDescription: Transistor: N-MOSFET; WMOS™ C2; unipolar; 600V; 38A; 277W; TO263 Type of transistor: N-MOSFET Technology: WMOS™ C2 Polarisation: unipolar Drain-source voltage: 600V Drain current: 38A Power dissipation: 277W Case: TO263 Gate-source voltage: ±30V On-state resistance: 99mΩ Mounting: SMD Kind of package: reel; tape Kind of channel: enhancement |
на замовлення 371 шт: термін постачання 21-30 дні (днів) |
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WMM38N60C2 | WAYON |
Category: SMD N channel transistorsDescription: Transistor: N-MOSFET; WMOS™ C2; unipolar; 600V; 38A; 277W; TO263 Type of transistor: N-MOSFET Technology: WMOS™ C2 Polarisation: unipolar Drain-source voltage: 600V Drain current: 38A Power dissipation: 277W Case: TO263 Gate-source voltage: ±30V On-state resistance: 99mΩ Mounting: SMD Kind of package: reel; tape Kind of channel: enhancement кількість в упаковці: 1 шт |
на замовлення 371 шт: термін постачання 14-21 дні (днів) |
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| WMM40N20JN | WAYON |
Category: SMD N channel transistorsDescription: Transistor: N-MOSFET; unipolar; 200V; 21A; Idm: 110A; 89W; TO263 Type of transistor: N-MOSFET Polarisation: unipolar Drain-source voltage: 200V Drain current: 21A Pulsed drain current: 110A Power dissipation: 89W Case: TO263 Gate-source voltage: ±20V On-state resistance: 46mΩ Mounting: SMD Gate charge: 7.7nC Kind of package: reel; tape Kind of channel: enhancement Reverse recovery time: 141ns |
товару немає в наявності |
В кошику од. на суму грн. | |||||||||||||||
| WMM4N90D1 | WAYON |
Category: SMD N channel transistors Description: Transistor: N-MOSFET; WMOS™ D1; unipolar; 900V; 4A; Idm: 16A; 65W Type of transistor: N-MOSFET Polarisation: unipolar Drain-source voltage: 900V Drain current: 4A Case: TO263 Gate-source voltage: ±30V On-state resistance: 2.9Ω Mounting: SMD Kind of package: reel; tape Kind of channel: enhancement Technology: WMOS™ D1 Pulsed drain current: 16A Power dissipation: 65W Gate charge: 26nC |
товару немає в наявності |
В кошику од. на суму грн. | |||||||||||||||
| WMM4N90D1B | WAYON |
Category: SMD N channel transistors Description: Transistor: N-MOSFET; WMOS™ D1; unipolar; 900V; 4A; Idm: 16A; 63W Type of transistor: N-MOSFET Polarisation: unipolar Drain-source voltage: 900V Drain current: 4A Case: TO263 Gate-source voltage: ±30V On-state resistance: 1.85Ω Mounting: SMD Kind of package: reel; tape Kind of channel: enhancement Technology: WMOS™ D1 Pulsed drain current: 16A Power dissipation: 63W Gate charge: 34nC |
товару немає в наявності |
В кошику од. на суму грн. | |||||||||||||||
| WMM50N20JN | WAYON |
Category: SMD N channel transistorsDescription: Transistor: N-MOSFET; unipolar; 200V; 24A; Idm: 120A; 90W; TO263 Type of transistor: N-MOSFET Polarisation: unipolar Drain-source voltage: 200V Drain current: 24A Pulsed drain current: 120A Power dissipation: 90W Case: TO263 Gate-source voltage: ±20V On-state resistance: 35mΩ Mounting: SMD Gate charge: 10nC Kind of package: reel; tape Kind of channel: enhancement Reverse recovery time: 138ns |
товару немає в наявності |
В кошику од. на суму грн. | |||||||||||||||
| WMM50P04T1 | WAYON | WMM50P04T1-CYG SMD P channel transistors |
на замовлення 56 шт: термін постачання 14-21 дні (днів) |
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| WMM53N60C4 | WAYON |
Category: SMD N channel transistors Description: Transistor: N-MOSFET; WMOS™ C4; unipolar; 600V; 26A; Idm: 90A; 350W Type of transistor: N-MOSFET Technology: WMOS™ C4 Polarisation: unipolar Drain-source voltage: 600V Drain current: 26A Pulsed drain current: 90A Power dissipation: 350W Case: TO263 Gate-source voltage: ±30V On-state resistance: 70mΩ Mounting: SMD Gate charge: 58nC Kind of package: reel; tape Kind of channel: enhancement |
товару немає в наявності |
В кошику од. на суму грн. | |||||||||||||||
| WMM53N60F2 | WAYON |
Category: SMD N channel transistors Description: Transistor: N-MOSFET; WMOS™ F2; unipolar; 600V; 26A; Idm: 90A; 350W Type of transistor: N-MOSFET Technology: WMOS™ F2 Polarisation: unipolar Drain-source voltage: 600V Drain current: 26A Pulsed drain current: 90A Power dissipation: 350W Case: TO263 Gate-source voltage: ±30V On-state resistance: 78mΩ Mounting: SMD Gate charge: 58nC Kind of package: reel; tape Kind of channel: enhancement |
товару немає в наявності |
В кошику од. на суму грн. | |||||||||||||||
| WMM6N90D1 | WAYON |
Category: SMD N channel transistors Description: Transistor: N-MOSFET; WMOS™ D1; unipolar; 900V; 6A; Idm: 24A; 100W Type of transistor: N-MOSFET Technology: WMOS™ D1 Polarisation: unipolar Drain-source voltage: 900V Drain current: 6A Pulsed drain current: 24A Power dissipation: 100W Case: TO263 Gate-source voltage: ±30V On-state resistance: 1.7Ω Mounting: SMD Gate charge: 86.2nC Kind of package: reel; tape Kind of channel: enhancement |
товару немає в наявності |
В кошику од. на суму грн. | |||||||||||||||
| WMM6N90D1B | WAYON |
Category: SMD N channel transistors Description: Transistor: N-MOSFET; unipolar; 900V; 6A; TO263 Type of transistor: N-MOSFET Polarisation: unipolar Drain-source voltage: 900V Drain current: 6A Case: TO263 Gate-source voltage: ±30V On-state resistance: 2.3Ω Mounting: SMD Kind of package: reel; tape Kind of channel: enhancement |
товару немає в наявності |
В кошику од. на суму грн. | |||||||||||||||
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WMM80N08TS | WAYON |
Category: SMD N channel transistors Description: Transistor: N-MOSFET; unipolar; 80V; 80A; Idm: 320A; 133W; TO263 Type of transistor: N-MOSFET Polarisation: unipolar Drain-source voltage: 80V Drain current: 80A Pulsed drain current: 320A Power dissipation: 133W Case: TO263 Gate-source voltage: ±20V On-state resistance: 12mΩ Mounting: SMD Gate charge: 68.7nC Kind of package: reel; tape Kind of channel: enhancement |
на замовлення 72 шт: термін постачання 21-30 дні (днів) |
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WMM80N08TS | WAYON |
Category: SMD N channel transistors Description: Transistor: N-MOSFET; unipolar; 80V; 80A; Idm: 320A; 133W; TO263 Type of transistor: N-MOSFET Polarisation: unipolar Drain-source voltage: 80V Drain current: 80A Pulsed drain current: 320A Power dissipation: 133W Case: TO263 Gate-source voltage: ±20V On-state resistance: 12mΩ Mounting: SMD Gate charge: 68.7nC Kind of package: reel; tape Kind of channel: enhancement кількість в упаковці: 1 шт |
на замовлення 72 шт: термін постачання 14-21 дні (днів) |
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| WMM80P04TS | WAYON | WMM80P04TS-CYG SMD P channel transistors |
на замовлення 56 шт: термін постачання 14-21 дні (днів) |
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WMM90N08TS | WAYON |
Category: SMD N channel transistors Description: Transistor: N-MOSFET; unipolar; 80V; 90A; Idm: 360A; 135.9W; TO263 Type of transistor: N-MOSFET Polarisation: unipolar Drain-source voltage: 80V Case: TO263 Gate-source voltage: ±20V On-state resistance: 8.5mΩ Mounting: SMD Kind of package: reel; tape Kind of channel: enhancement Power dissipation: 135.9W Drain current: 90A Pulsed drain current: 360A Gate charge: 111nC |
на замовлення 86 шт: термін постачання 21-30 дні (днів) |
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WMM90N08TS | WAYON |
Category: SMD N channel transistors Description: Transistor: N-MOSFET; unipolar; 80V; 90A; Idm: 360A; 135.9W; TO263 Type of transistor: N-MOSFET Polarisation: unipolar Drain-source voltage: 80V Case: TO263 Gate-source voltage: ±20V On-state resistance: 8.5mΩ Mounting: SMD Kind of package: reel; tape Kind of channel: enhancement Power dissipation: 135.9W Drain current: 90A Pulsed drain current: 360A Gate charge: 111nC кількість в упаковці: 1 шт |
на замовлення 86 шт: термін постачання 14-21 дні (днів) |
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| WMM95P06TS | WAYON | WMM95P06TS-CYG SMD P channel transistors |
на замовлення 62 шт: термін постачання 14-21 дні (днів) |
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WMMB015N08HGS | WAYON |
Category: SMD N channel transistors Description: Transistor: N-MOSFET; unipolar; 80V; 358A; Idm: 1432A; 347.2W Type of transistor: N-MOSFET Polarisation: unipolar Drain-source voltage: 80V Drain current: 358A Pulsed drain current: 1432A Power dissipation: 347.2W Case: TO263-7 Gate-source voltage: ±20V On-state resistance: 1.5mΩ Mounting: SMD Gate charge: 238nC Kind of package: reel; tape Kind of channel: enhancement |
на замовлення 17 шт: термін постачання 21-30 дні (днів) |
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WMMB015N08HGS | WAYON |
Category: SMD N channel transistors Description: Transistor: N-MOSFET; unipolar; 80V; 358A; Idm: 1432A; 347.2W Type of transistor: N-MOSFET Polarisation: unipolar Drain-source voltage: 80V Drain current: 358A Pulsed drain current: 1432A Power dissipation: 347.2W Case: TO263-7 Gate-source voltage: ±20V On-state resistance: 1.5mΩ Mounting: SMD Gate charge: 238nC Kind of package: reel; tape Kind of channel: enhancement кількість в упаковці: 1 шт |
на замовлення 17 шт: термін постачання 14-21 дні (днів) |
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WMMB020N10HG4 | WAYON |
Category: SMD N channel transistors Description: Transistor: N-MOSFET; unipolar; 100V; 238A; Idm: 952A; 277.8W Type of transistor: N-MOSFET Polarisation: unipolar Drain-source voltage: 100V Drain current: 238A Pulsed drain current: 952A Power dissipation: 277.8W Case: TO263-7 Gate-source voltage: ±20V On-state resistance: 2.5mΩ Mounting: SMD Gate charge: 123.4nC Kind of package: reel; tape Kind of channel: enhancement |
на замовлення 285 шт: термін постачання 21-30 дні (днів) |
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WMMB020N10HG4 | WAYON |
Category: SMD N channel transistors Description: Transistor: N-MOSFET; unipolar; 100V; 238A; Idm: 952A; 277.8W Type of transistor: N-MOSFET Polarisation: unipolar Drain-source voltage: 100V Drain current: 238A Pulsed drain current: 952A Power dissipation: 277.8W Case: TO263-7 Gate-source voltage: ±20V On-state resistance: 2.5mΩ Mounting: SMD Gate charge: 123.4nC Kind of package: reel; tape Kind of channel: enhancement кількість в упаковці: 1 шт |
на замовлення 285 шт: термін постачання 14-21 дні (днів) |
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WMN07N60C2 | WAYON |
Category: THT N channel transistorsDescription: Transistor: N-MOSFET; WMOS™ C2; unipolar; 600V; 5A; 42W; TO262 Type of transistor: N-MOSFET Polarisation: unipolar Drain-source voltage: 600V Drain current: 5A Power dissipation: 42W Case: TO262 Gate-source voltage: ±30V On-state resistance: 1.14Ω Mounting: THT Kind of package: tube Kind of channel: enhancement Technology: WMOS™ C2 |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||||||||
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WMN07N65C2 | WAYON |
Category: THT N channel transistorsDescription: Transistor: N-MOSFET; WMOS™ C2; unipolar; 650V; 5A; 42W; TO262 Type of transistor: N-MOSFET Polarisation: unipolar Drain-source voltage: 650V Drain current: 5A Power dissipation: 42W Case: TO262 Gate-source voltage: ±30V On-state resistance: 1.14Ω Mounting: THT Kind of package: tube Kind of channel: enhancement Technology: WMOS™ C2 |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||||||||
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WMN07N80M3 | WAYON |
Category: THT N channel transistorsDescription: Transistor: N-MOSFET; WMOS™ M3; unipolar; 800V; 6.8A; 55W; TO262 Type of transistor: N-MOSFET Polarisation: unipolar Drain-source voltage: 800V Drain current: 6.8A Power dissipation: 55W Case: TO262 Gate-source voltage: ±30V On-state resistance: 1.8Ω Mounting: THT Kind of package: tube Kind of channel: enhancement Technology: WMOS™ M3 |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||||||||
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WMN08N80M3 | WAYON |
Category: THT N channel transistorsDescription: Transistor: N-MOSFET; WMOS™ M3; unipolar; 800V; 7A; 70W; TO262 Type of transistor: N-MOSFET Technology: WMOS™ M3 Polarisation: unipolar Drain-source voltage: 800V Drain current: 7A Power dissipation: 70W Case: TO262 Gate-source voltage: ±30V On-state resistance: 1.38Ω Mounting: THT Kind of package: tube Kind of channel: enhancement |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||||||||
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WMN09N60C2 | WAYON |
Category: THT N channel transistorsDescription: Transistor: N-MOSFET; WMOS™ C2; unipolar; 600V; 6A; 45W; TO262 Type of transistor: N-MOSFET Technology: WMOS™ C2 Polarisation: unipolar Drain-source voltage: 600V Drain current: 6A Power dissipation: 45W Case: TO262 Gate-source voltage: ±30V On-state resistance: 940mΩ Mounting: THT Kind of package: tube Kind of channel: enhancement |
на замовлення 27 шт: термін постачання 21-30 дні (днів) |
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WMN09N60C2 | WAYON |
Category: THT N channel transistorsDescription: Transistor: N-MOSFET; WMOS™ C2; unipolar; 600V; 6A; 45W; TO262 Type of transistor: N-MOSFET Technology: WMOS™ C2 Polarisation: unipolar Drain-source voltage: 600V Drain current: 6A Power dissipation: 45W Case: TO262 Gate-source voltage: ±30V On-state resistance: 940mΩ Mounting: THT Kind of package: tube Kind of channel: enhancement кількість в упаковці: 1 шт |
на замовлення 27 шт: термін постачання 14-21 дні (днів) |
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WMN10N60C2 | WAYON |
Category: THT N channel transistorsDescription: Transistor: N-MOSFET; WMOS™ C2; unipolar; 600V; 8A; 57W; TO262 Type of transistor: N-MOSFET Technology: WMOS™ C2 Polarisation: unipolar Drain-source voltage: 600V Drain current: 8A Power dissipation: 57W Case: TO262 Gate-source voltage: ±30V On-state resistance: 690mΩ Mounting: THT Kind of package: tube Kind of channel: enhancement |
на замовлення 2 шт: термін постачання 21-30 дні (днів) |
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WMN10N60C2 | WAYON |
Category: THT N channel transistorsDescription: Transistor: N-MOSFET; WMOS™ C2; unipolar; 600V; 8A; 57W; TO262 Type of transistor: N-MOSFET Technology: WMOS™ C2 Polarisation: unipolar Drain-source voltage: 600V Drain current: 8A Power dissipation: 57W Case: TO262 Gate-source voltage: ±30V On-state resistance: 690mΩ Mounting: THT Kind of package: tube Kind of channel: enhancement кількість в упаковці: 1 шт |
на замовлення 2 шт: термін постачання 14-21 дні (днів) |
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WMN10N65C2 | WAYON |
Category: THT N channel transistorsDescription: Transistor: N-MOSFET; WMOS™ C2; unipolar; 650V; 8A; 57W; TO262 Type of transistor: N-MOSFET Technology: WMOS™ C2 Polarisation: unipolar Drain-source voltage: 650V Drain current: 8A Power dissipation: 57W Case: TO262 Gate-source voltage: ±30V On-state resistance: 690mΩ Mounting: THT Kind of package: tube Kind of channel: enhancement |
на замовлення 17 шт: термін постачання 21-30 дні (днів) |
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WMN10N65C2 | WAYON |
Category: THT N channel transistorsDescription: Transistor: N-MOSFET; WMOS™ C2; unipolar; 650V; 8A; 57W; TO262 Type of transistor: N-MOSFET Technology: WMOS™ C2 Polarisation: unipolar Drain-source voltage: 650V Drain current: 8A Power dissipation: 57W Case: TO262 Gate-source voltage: ±30V On-state resistance: 690mΩ Mounting: THT Kind of package: tube Kind of channel: enhancement кількість в упаковці: 1 шт |
на замовлення 17 шт: термін постачання 14-21 дні (днів) |
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WMN10N70C2 | WAYON |
Category: THT N channel transistorsDescription: Transistor: N-MOSFET; WMOS™ C2; unipolar; 700V; 7.5A; 57W; TO262 Type of transistor: N-MOSFET Technology: WMOS™ C2 Polarisation: unipolar Drain-source voltage: 700V Drain current: 7.5A Power dissipation: 57W Case: TO262 Gate-source voltage: ±30V On-state resistance: 920mΩ Mounting: THT Kind of package: tube Kind of channel: enhancement |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||||||||
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WMN10N80M3 | WAYON |
Category: THT N channel transistorsDescription: Transistor: N-MOSFET; WMOS™ M3; unipolar; 800V; 10A; 85W; TO262 Type of transistor: N-MOSFET Technology: WMOS™ M3 Polarisation: unipolar Drain-source voltage: 800V Drain current: 10A Power dissipation: 85W Case: TO262 Gate-source voltage: ±30V On-state resistance: 1.03Ω Mounting: THT Kind of package: tube Kind of channel: enhancement |
товару немає в наявності |
В кошику од. на суму грн. |
| WMM16N70C2 |
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Виробник: WAYON
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; WMOS™ C2; unipolar; 700V; 12A; 86W; TO263
Type of transistor: N-MOSFET
Technology: WMOS™ C2
Polarisation: unipolar
Drain-source voltage: 700V
Drain current: 12A
Power dissipation: 86W
Case: TO263
Gate-source voltage: ±30V
On-state resistance: 0.42Ω
Mounting: SMD
Kind of package: reel; tape
Kind of channel: enhancement
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; WMOS™ C2; unipolar; 700V; 12A; 86W; TO263
Type of transistor: N-MOSFET
Technology: WMOS™ C2
Polarisation: unipolar
Drain-source voltage: 700V
Drain current: 12A
Power dissipation: 86W
Case: TO263
Gate-source voltage: ±30V
On-state resistance: 0.42Ω
Mounting: SMD
Kind of package: reel; tape
Kind of channel: enhancement
товару немає в наявності
В кошику
од. на суму грн.
| WMM180N03TS |
Виробник: WAYON
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 30V; 180A; Idm: 720A; 181W; TO263
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 30V
Drain current: 180A
Pulsed drain current: 720A
Power dissipation: 181W
Case: TO263
Gate-source voltage: ±20V
On-state resistance: 3.5mΩ
Mounting: SMD
Gate charge: 32nC
Kind of package: reel; tape
Kind of channel: enhancement
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 30V; 180A; Idm: 720A; 181W; TO263
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 30V
Drain current: 180A
Pulsed drain current: 720A
Power dissipation: 181W
Case: TO263
Gate-source voltage: ±20V
On-state resistance: 3.5mΩ
Mounting: SMD
Gate charge: 32nC
Kind of package: reel; tape
Kind of channel: enhancement
на замовлення 76 шт:
термін постачання 21-30 дні (днів)| Кількість | Ціна |
|---|---|
| 8+ | 59.17 грн |
| 14+ | 31.00 грн |
| 25+ | 25.91 грн |
| WMM180N03TS |
Виробник: WAYON
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 30V; 180A; Idm: 720A; 181W; TO263
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 30V
Drain current: 180A
Pulsed drain current: 720A
Power dissipation: 181W
Case: TO263
Gate-source voltage: ±20V
On-state resistance: 3.5mΩ
Mounting: SMD
Gate charge: 32nC
Kind of package: reel; tape
Kind of channel: enhancement
кількість в упаковці: 1 шт
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 30V; 180A; Idm: 720A; 181W; TO263
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 30V
Drain current: 180A
Pulsed drain current: 720A
Power dissipation: 181W
Case: TO263
Gate-source voltage: ±20V
On-state resistance: 3.5mΩ
Mounting: SMD
Gate charge: 32nC
Kind of package: reel; tape
Kind of channel: enhancement
кількість в упаковці: 1 шт
на замовлення 76 шт:
термін постачання 14-21 дні (днів)| Кількість | Ціна |
|---|---|
| 5+ | 71.00 грн |
| 8+ | 38.63 грн |
| 25+ | 31.10 грн |
| 100+ | 28.05 грн |
| 800+ | 27.36 грн |
| WMM18N20JN |
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Виробник: WAYON
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 200V; 7A; Idm: 39A; 36W; TO263; 80ns
Case: TO263
Mounting: SMD
Reverse recovery time: 80ns
On-state resistance: 135mΩ
Drain current: 7A
Gate-source voltage: ±20V
Power dissipation: 36W
Pulsed drain current: 39A
Drain-source voltage: 200V
Kind of channel: enhancement
Type of transistor: N-MOSFET
Kind of package: reel; tape
Polarisation: unipolar
Gate charge: 7.2nC
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 200V; 7A; Idm: 39A; 36W; TO263; 80ns
Case: TO263
Mounting: SMD
Reverse recovery time: 80ns
On-state resistance: 135mΩ
Drain current: 7A
Gate-source voltage: ±20V
Power dissipation: 36W
Pulsed drain current: 39A
Drain-source voltage: 200V
Kind of channel: enhancement
Type of transistor: N-MOSFET
Kind of package: reel; tape
Polarisation: unipolar
Gate charge: 7.2nC
товару немає в наявності
В кошику
од. на суму грн.
| WMM190N03TS |
Виробник: WAYON
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 30V; 190A; Idm: 760A; 192W; TO263
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 30V
Case: TO263
Gate-source voltage: ±20V
On-state resistance: 2.6mΩ
Mounting: SMD
Kind of package: reel; tape
Kind of channel: enhancement
Power dissipation: 192W
Drain current: 190A
Pulsed drain current: 760A
Gate charge: 0.1µC
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 30V; 190A; Idm: 760A; 192W; TO263
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 30V
Case: TO263
Gate-source voltage: ±20V
On-state resistance: 2.6mΩ
Mounting: SMD
Kind of package: reel; tape
Kind of channel: enhancement
Power dissipation: 192W
Drain current: 190A
Pulsed drain current: 760A
Gate charge: 0.1µC
на замовлення 79 шт:
термін постачання 21-30 дні (днів)| Кількість | Ціна |
|---|---|
| 9+ | 52.11 грн |
| 14+ | 31.16 грн |
| 25+ | 26.08 грн |
| WMM190N03TS |
Виробник: WAYON
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 30V; 190A; Idm: 760A; 192W; TO263
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 30V
Case: TO263
Gate-source voltage: ±20V
On-state resistance: 2.6mΩ
Mounting: SMD
Kind of package: reel; tape
Kind of channel: enhancement
Power dissipation: 192W
Drain current: 190A
Pulsed drain current: 760A
Gate charge: 0.1µC
кількість в упаковці: 1 шт
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 30V; 190A; Idm: 760A; 192W; TO263
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 30V
Case: TO263
Gate-source voltage: ±20V
On-state resistance: 2.6mΩ
Mounting: SMD
Kind of package: reel; tape
Kind of channel: enhancement
Power dissipation: 192W
Drain current: 190A
Pulsed drain current: 760A
Gate charge: 0.1µC
кількість в упаковці: 1 шт
на замовлення 79 шт:
термін постачання 14-21 дні (днів)| Кількість | Ціна |
|---|---|
| 6+ | 62.53 грн |
| 8+ | 38.83 грн |
| 25+ | 31.29 грн |
| 100+ | 28.14 грн |
| 800+ | 27.55 грн |
| WMM20N20JN |
Виробник: WAYON
WMM20N20JN-CYG SMD N channel transistors
WMM20N20JN-CYG SMD N channel transistors
на замовлення 600 шт:
термін постачання 14-21 дні (днів)| Кількість | Ціна |
|---|---|
| 5+ | 68.88 грн |
| 41+ | 28.93 грн |
| 112+ | 27.36 грн |
| WMM20N60C2 |
Виробник: WAYON
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; WMOS™ C2; unipolar; 600V; 15A; 86W; TO263
Type of transistor: N-MOSFET
Technology: WMOS™ C2
Polarisation: unipolar
Drain-source voltage: 600V
Drain current: 15A
Power dissipation: 86W
Case: TO263
Gate-source voltage: ±30V
On-state resistance: 0.3Ω
Mounting: SMD
Kind of package: reel; tape
Kind of channel: enhancement
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; WMOS™ C2; unipolar; 600V; 15A; 86W; TO263
Type of transistor: N-MOSFET
Technology: WMOS™ C2
Polarisation: unipolar
Drain-source voltage: 600V
Drain current: 15A
Power dissipation: 86W
Case: TO263
Gate-source voltage: ±30V
On-state resistance: 0.3Ω
Mounting: SMD
Kind of package: reel; tape
Kind of channel: enhancement
товару немає в наявності
В кошику
од. на суму грн.
| WMM220N20HG3 |
Виробник: WAYON
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 200V; 78A; Idm: 312A; 312.5W; TO263
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 200V
Drain current: 78A
Pulsed drain current: 312A
Power dissipation: 312.5W
Case: TO263
Gate-source voltage: ±20V
On-state resistance: 22mΩ
Mounting: SMD
Gate charge: 37nC
Kind of package: reel; tape
Kind of channel: enhancement
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 200V; 78A; Idm: 312A; 312.5W; TO263
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 200V
Drain current: 78A
Pulsed drain current: 312A
Power dissipation: 312.5W
Case: TO263
Gate-source voltage: ±20V
On-state resistance: 22mΩ
Mounting: SMD
Gate charge: 37nC
Kind of package: reel; tape
Kind of channel: enhancement
на замовлення 17 шт:
термін постачання 21-30 дні (днів)| Кількість | Ціна |
|---|---|
| 3+ | 219.90 грн |
| 5+ | 192.71 грн |
| WMM220N20HG3 |
Виробник: WAYON
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 200V; 78A; Idm: 312A; 312.5W; TO263
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 200V
Drain current: 78A
Pulsed drain current: 312A
Power dissipation: 312.5W
Case: TO263
Gate-source voltage: ±20V
On-state resistance: 22mΩ
Mounting: SMD
Gate charge: 37nC
Kind of package: reel; tape
Kind of channel: enhancement
кількість в упаковці: 1 шт
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 200V; 78A; Idm: 312A; 312.5W; TO263
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 200V
Drain current: 78A
Pulsed drain current: 312A
Power dissipation: 312.5W
Case: TO263
Gate-source voltage: ±20V
On-state resistance: 22mΩ
Mounting: SMD
Gate charge: 37nC
Kind of package: reel; tape
Kind of channel: enhancement
кількість в упаковці: 1 шт
на замовлення 17 шт:
термін постачання 14-21 дні (днів)| Кількість | Ціна |
|---|---|
| 2+ | 263.88 грн |
| 5+ | 240.15 грн |
| 25+ | 204.69 грн |
| 100+ | 184.02 грн |
| 800+ | 181.07 грн |
| WMM240P10HG4 |
Виробник: WAYON
WMM240P10HG4-CYG SMD P channel transistors
WMM240P10HG4-CYG SMD P channel transistors
на замовлення 66 шт:
термін постачання 14-21 дні (днів)| Кількість | Ціна |
|---|---|
| 4+ | 94.32 грн |
| 19+ | 62.98 грн |
| 51+ | 60.03 грн |
| WMM25N80M3 |
Виробник: WAYON
WMM25N80M3-CYG SMD N channel transistors
WMM25N80M3-CYG SMD N channel transistors
на замовлення 359 шт:
термін постачання 14-21 дні (днів)| Кількість | Ціна |
|---|---|
| 2+ | 233.15 грн |
| 7+ | 172.21 грн |
| 19+ | 162.37 грн |
| WMM26N60C4 |
Виробник: WAYON
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; WMOS™ C4; unipolar; 600V; 10.5A; Idm: 40A
Type of transistor: N-MOSFET
Technology: WMOS™ C4
Polarisation: unipolar
Drain-source voltage: 600V
Drain current: 10.5A
Pulsed drain current: 40A
Power dissipation: 135W
Case: TO263
Gate-source voltage: ±30V
On-state resistance: 0.19Ω
Mounting: SMD
Gate charge: 22.1nC
Kind of package: reel; tape
Kind of channel: enhancement
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; WMOS™ C4; unipolar; 600V; 10.5A; Idm: 40A
Type of transistor: N-MOSFET
Technology: WMOS™ C4
Polarisation: unipolar
Drain-source voltage: 600V
Drain current: 10.5A
Pulsed drain current: 40A
Power dissipation: 135W
Case: TO263
Gate-source voltage: ±30V
On-state resistance: 0.19Ω
Mounting: SMD
Gate charge: 22.1nC
Kind of package: reel; tape
Kind of channel: enhancement
на замовлення 780 шт:
термін постачання 21-30 дні (днів)| Кількість | Ціна |
|---|---|
| 4+ | 118.09 грн |
| 10+ | 99.23 грн |
| 25+ | 89.39 грн |
| 100+ | 82.83 грн |
| 250+ | 78.73 грн |
| 500+ | 73.81 грн |
| WMM26N60C4 |
Виробник: WAYON
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; WMOS™ C4; unipolar; 600V; 10.5A; Idm: 40A
Type of transistor: N-MOSFET
Technology: WMOS™ C4
Polarisation: unipolar
Drain-source voltage: 600V
Drain current: 10.5A
Pulsed drain current: 40A
Power dissipation: 135W
Case: TO263
Gate-source voltage: ±30V
On-state resistance: 0.19Ω
Mounting: SMD
Gate charge: 22.1nC
Kind of package: reel; tape
Kind of channel: enhancement
кількість в упаковці: 1 шт
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; WMOS™ C4; unipolar; 600V; 10.5A; Idm: 40A
Type of transistor: N-MOSFET
Technology: WMOS™ C4
Polarisation: unipolar
Drain-source voltage: 600V
Drain current: 10.5A
Pulsed drain current: 40A
Power dissipation: 135W
Case: TO263
Gate-source voltage: ±30V
On-state resistance: 0.19Ω
Mounting: SMD
Gate charge: 22.1nC
Kind of package: reel; tape
Kind of channel: enhancement
кількість в упаковці: 1 шт
на замовлення 780 шт:
термін постачання 14-21 дні (днів)| Кількість | Ціна |
|---|---|
| 2+ | 170.62 грн |
| 3+ | 147.16 грн |
| 10+ | 119.07 грн |
| 25+ | 107.26 грн |
| 100+ | 99.39 грн |
| 250+ | 94.47 грн |
| 500+ | 88.57 грн |
| WMM26N60F2 |
Виробник: WAYON
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; WMOS™ F2; unipolar; 600V; 10.5A; Idm: 40A
Type of transistor: N-MOSFET
Technology: WMOS™ F2
Polarisation: unipolar
Drain-source voltage: 600V
Drain current: 10.5A
Pulsed drain current: 40A
Power dissipation: 135W
Case: TO263
Gate-source voltage: ±30V
On-state resistance: 0.21Ω
Mounting: SMD
Gate charge: 22.1nC
Kind of package: reel; tape
Kind of channel: enhancement
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; WMOS™ F2; unipolar; 600V; 10.5A; Idm: 40A
Type of transistor: N-MOSFET
Technology: WMOS™ F2
Polarisation: unipolar
Drain-source voltage: 600V
Drain current: 10.5A
Pulsed drain current: 40A
Power dissipation: 135W
Case: TO263
Gate-source voltage: ±30V
On-state resistance: 0.21Ω
Mounting: SMD
Gate charge: 22.1nC
Kind of package: reel; tape
Kind of channel: enhancement
на замовлення 796 шт:
термін постачання 21-30 дні (днів)| Кількість | Ціна |
|---|---|
| 4+ | 111.53 грн |
| 10+ | 93.49 грн |
| 25+ | 84.47 грн |
| 100+ | 82.01 грн |
| WMM26N60F2 |
Виробник: WAYON
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; WMOS™ F2; unipolar; 600V; 10.5A; Idm: 40A
Type of transistor: N-MOSFET
Technology: WMOS™ F2
Polarisation: unipolar
Drain-source voltage: 600V
Drain current: 10.5A
Pulsed drain current: 40A
Power dissipation: 135W
Case: TO263
Gate-source voltage: ±30V
On-state resistance: 0.21Ω
Mounting: SMD
Gate charge: 22.1nC
Kind of package: reel; tape
Kind of channel: enhancement
кількість в упаковці: 1 шт
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; WMOS™ F2; unipolar; 600V; 10.5A; Idm: 40A
Type of transistor: N-MOSFET
Technology: WMOS™ F2
Polarisation: unipolar
Drain-source voltage: 600V
Drain current: 10.5A
Pulsed drain current: 40A
Power dissipation: 135W
Case: TO263
Gate-source voltage: ±30V
On-state resistance: 0.21Ω
Mounting: SMD
Gate charge: 22.1nC
Kind of package: reel; tape
Kind of channel: enhancement
кількість в упаковці: 1 шт
на замовлення 796 шт:
термін постачання 14-21 дні (днів)| Кількість | Ціна |
|---|---|
| 2+ | 162.14 грн |
| 3+ | 138.98 грн |
| 10+ | 112.18 грн |
| 25+ | 101.36 грн |
| 100+ | 98.41 грн |
| WMM26N60FD |
![]() |
Виробник: WAYON
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; WMOS™ FD; unipolar; 600V; 20A; 147W; TO263
Type of transistor: N-MOSFET
Technology: WMOS™ FD
Polarisation: unipolar
Drain-source voltage: 600V
Drain current: 20A
Power dissipation: 147W
Case: TO263
Gate-source voltage: ±30V
On-state resistance: 0.2Ω
Mounting: SMD
Kind of package: reel; tape
Kind of channel: enhancement
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; WMOS™ FD; unipolar; 600V; 20A; 147W; TO263
Type of transistor: N-MOSFET
Technology: WMOS™ FD
Polarisation: unipolar
Drain-source voltage: 600V
Drain current: 20A
Power dissipation: 147W
Case: TO263
Gate-source voltage: ±30V
On-state resistance: 0.2Ω
Mounting: SMD
Kind of package: reel; tape
Kind of channel: enhancement
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| WMM26N65FD |
![]() |
Виробник: WAYON
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; WMOS™ FD; unipolar; 650V; 20A; 147W; TO263
Type of transistor: N-MOSFET
Technology: WMOS™ FD
Polarisation: unipolar
Drain-source voltage: 650V
Drain current: 20A
Power dissipation: 147W
Case: TO263
Gate-source voltage: ±30V
On-state resistance: 0.2Ω
Mounting: SMD
Kind of package: reel; tape
Kind of channel: enhancement
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; WMOS™ FD; unipolar; 650V; 20A; 147W; TO263
Type of transistor: N-MOSFET
Technology: WMOS™ FD
Polarisation: unipolar
Drain-source voltage: 650V
Drain current: 20A
Power dissipation: 147W
Case: TO263
Gate-source voltage: ±30V
On-state resistance: 0.2Ω
Mounting: SMD
Kind of package: reel; tape
Kind of channel: enhancement
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| WMM26N65SR |
Виробник: WAYON
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; WMOS™ SR; unipolar; 650V; 12A; Idm: 50A; 147W
Type of transistor: N-MOSFET
Technology: WMOS™ SR
Polarisation: unipolar
Drain-source voltage: 650V
Drain current: 12A
Pulsed drain current: 50A
Power dissipation: 147W
Case: TO263
Gate-source voltage: ±30V
On-state resistance: 198mΩ
Mounting: SMD
Gate charge: 34.7nC
Kind of package: reel; tape
Kind of channel: enhancement
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; WMOS™ SR; unipolar; 650V; 12A; Idm: 50A; 147W
Type of transistor: N-MOSFET
Technology: WMOS™ SR
Polarisation: unipolar
Drain-source voltage: 650V
Drain current: 12A
Pulsed drain current: 50A
Power dissipation: 147W
Case: TO263
Gate-source voltage: ±30V
On-state resistance: 198mΩ
Mounting: SMD
Gate charge: 34.7nC
Kind of package: reel; tape
Kind of channel: enhancement
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| WMM28N60C4 |
![]() |
Виробник: WAYON
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; WMOS™ C4; unipolar; 600V; 13A; Idm: 65A; 160W
Type of transistor: N-MOSFET
Technology: WMOS™ C4
Polarisation: unipolar
Drain-source voltage: 600V
Drain current: 13A
Pulsed drain current: 65A
Power dissipation: 160W
Case: TO263
Gate-source voltage: ±30V
On-state resistance: 0.16Ω
Mounting: SMD
Gate charge: 27.3nC
Kind of package: reel; tape
Kind of channel: enhancement
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; WMOS™ C4; unipolar; 600V; 13A; Idm: 65A; 160W
Type of transistor: N-MOSFET
Technology: WMOS™ C4
Polarisation: unipolar
Drain-source voltage: 600V
Drain current: 13A
Pulsed drain current: 65A
Power dissipation: 160W
Case: TO263
Gate-source voltage: ±30V
On-state resistance: 0.16Ω
Mounting: SMD
Gate charge: 27.3nC
Kind of package: reel; tape
Kind of channel: enhancement
на замовлення 800 шт:
термін постачання 21-30 дні (днів)| Кількість | Ціна |
|---|---|
| 4+ | 119.22 грн |
| 5+ | 99.23 грн |
| 10+ | 91.85 грн |
| 25+ | 87.75 грн |
| 100+ | 84.47 грн |
| WMM28N60C4 |
![]() |
Виробник: WAYON
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; WMOS™ C4; unipolar; 600V; 13A; Idm: 65A; 160W
Type of transistor: N-MOSFET
Technology: WMOS™ C4
Polarisation: unipolar
Drain-source voltage: 600V
Drain current: 13A
Pulsed drain current: 65A
Power dissipation: 160W
Case: TO263
Gate-source voltage: ±30V
On-state resistance: 0.16Ω
Mounting: SMD
Gate charge: 27.3nC
Kind of package: reel; tape
Kind of channel: enhancement
кількість в упаковці: 1 шт
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; WMOS™ C4; unipolar; 600V; 13A; Idm: 65A; 160W
Type of transistor: N-MOSFET
Technology: WMOS™ C4
Polarisation: unipolar
Drain-source voltage: 600V
Drain current: 13A
Pulsed drain current: 65A
Power dissipation: 160W
Case: TO263
Gate-source voltage: ±30V
On-state resistance: 0.16Ω
Mounting: SMD
Gate charge: 27.3nC
Kind of package: reel; tape
Kind of channel: enhancement
кількість в упаковці: 1 шт
на замовлення 800 шт:
термін постачання 14-21 дні (днів)| Кількість | Ціна |
|---|---|
| 3+ | 123.65 грн |
| 10+ | 110.22 грн |
| 25+ | 105.30 грн |
| 100+ | 101.36 грн |
| WMM30N25JN |
![]() |
Виробник: WAYON
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 250V; 12A; Idm: 63A; 59W; TO263
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 250V
Drain current: 12A
Pulsed drain current: 63A
Power dissipation: 59W
Case: TO263
Gate-source voltage: ±20V
On-state resistance: 99mΩ
Mounting: SMD
Gate charge: 9.8nC
Kind of package: reel; tape
Kind of channel: enhancement
Reverse recovery time: 133ns
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 250V; 12A; Idm: 63A; 59W; TO263
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 250V
Drain current: 12A
Pulsed drain current: 63A
Power dissipation: 59W
Case: TO263
Gate-source voltage: ±20V
On-state resistance: 99mΩ
Mounting: SMD
Gate charge: 9.8nC
Kind of package: reel; tape
Kind of channel: enhancement
Reverse recovery time: 133ns
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| WMM340N20HG2 |
Виробник: WAYON
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 200V; 50A; Idm: 148A; 173.6W; TO263
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 200V
Drain current: 50A
Pulsed drain current: 148A
Power dissipation: 173.6W
Case: TO263
Gate-source voltage: ±20V
On-state resistance: 34mΩ
Mounting: SMD
Gate charge: 23nC
Kind of package: reel; tape
Kind of channel: enhancement
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 200V; 50A; Idm: 148A; 173.6W; TO263
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 200V
Drain current: 50A
Pulsed drain current: 148A
Power dissipation: 173.6W
Case: TO263
Gate-source voltage: ±20V
On-state resistance: 34mΩ
Mounting: SMD
Gate charge: 23nC
Kind of package: reel; tape
Kind of channel: enhancement
на замовлення 40 шт:
термін постачання 21-30 дні (днів)| Кількість | Ціна |
|---|---|
| 5+ | 91.03 грн |
| 25+ | 80.37 грн |
| WMM340N20HG2 |
Виробник: WAYON
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 200V; 50A; Idm: 148A; 173.6W; TO263
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 200V
Drain current: 50A
Pulsed drain current: 148A
Power dissipation: 173.6W
Case: TO263
Gate-source voltage: ±20V
On-state resistance: 34mΩ
Mounting: SMD
Gate charge: 23nC
Kind of package: reel; tape
Kind of channel: enhancement
кількість в упаковці: 1 шт
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 200V; 50A; Idm: 148A; 173.6W; TO263
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 200V
Drain current: 50A
Pulsed drain current: 148A
Power dissipation: 173.6W
Case: TO263
Gate-source voltage: ±20V
On-state resistance: 34mΩ
Mounting: SMD
Gate charge: 23nC
Kind of package: reel; tape
Kind of channel: enhancement
кількість в упаковці: 1 шт
на замовлення 40 шт:
термін постачання 14-21 дні (днів)| Кількість | Ціна |
|---|---|
| 3+ | 123.99 грн |
| 5+ | 113.43 грн |
| 25+ | 96.44 грн |
| 100+ | 86.60 грн |
| 800+ | 84.63 грн |
| WMM36N60C4 |
![]() |
Виробник: WAYON
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; WMOS™ C4; unipolar; 600V; 20A; Idm: 100A; 277W
Type of transistor: N-MOSFET
Technology: WMOS™ C4
Polarisation: unipolar
Drain-source voltage: 600V
Drain current: 20A
Pulsed drain current: 100A
Power dissipation: 277W
Case: TO263
Gate-source voltage: ±30V
On-state resistance: 97mΩ
Mounting: SMD
Gate charge: 46nC
Kind of package: reel; tape
Kind of channel: enhancement
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; WMOS™ C4; unipolar; 600V; 20A; Idm: 100A; 277W
Type of transistor: N-MOSFET
Technology: WMOS™ C4
Polarisation: unipolar
Drain-source voltage: 600V
Drain current: 20A
Pulsed drain current: 100A
Power dissipation: 277W
Case: TO263
Gate-source voltage: ±30V
On-state resistance: 97mΩ
Mounting: SMD
Gate charge: 46nC
Kind of package: reel; tape
Kind of channel: enhancement
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од. на суму грн.
| WMM36N60F2 |
Виробник: WAYON
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; WMOS™ F2; unipolar; 600V; 20A; Idm: 100A; 277W
Type of transistor: N-MOSFET
Technology: WMOS™ F2
Polarisation: unipolar
Drain-source voltage: 600V
Drain current: 20A
Power dissipation: 277W
Case: TO263
Gate-source voltage: ±30V
On-state resistance: 0.11Ω
Mounting: SMD
Kind of package: reel; tape
Kind of channel: enhancement
Pulsed drain current: 100A
Gate charge: 46nC
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; WMOS™ F2; unipolar; 600V; 20A; Idm: 100A; 277W
Type of transistor: N-MOSFET
Technology: WMOS™ F2
Polarisation: unipolar
Drain-source voltage: 600V
Drain current: 20A
Power dissipation: 277W
Case: TO263
Gate-source voltage: ±30V
On-state resistance: 0.11Ω
Mounting: SMD
Kind of package: reel; tape
Kind of channel: enhancement
Pulsed drain current: 100A
Gate charge: 46nC
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од. на суму грн.
| WMM36N65C4 |
Виробник: WAYON
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; WMOS™ C4; unipolar; 650V; 20A; Idm: 100A; 277W
Type of transistor: N-MOSFET
Technology: WMOS™ C4
Polarisation: unipolar
Drain-source voltage: 650V
Drain current: 20A
Pulsed drain current: 100A
Power dissipation: 277W
Case: TO263
Gate-source voltage: ±30V
On-state resistance: 97mΩ
Mounting: SMD
Gate charge: 46nC
Kind of package: reel; tape
Kind of channel: enhancement
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; WMOS™ C4; unipolar; 650V; 20A; Idm: 100A; 277W
Type of transistor: N-MOSFET
Technology: WMOS™ C4
Polarisation: unipolar
Drain-source voltage: 650V
Drain current: 20A
Pulsed drain current: 100A
Power dissipation: 277W
Case: TO263
Gate-source voltage: ±30V
On-state resistance: 97mΩ
Mounting: SMD
Gate charge: 46nC
Kind of package: reel; tape
Kind of channel: enhancement
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| WMM38N60C2 |
![]() |
Виробник: WAYON
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; WMOS™ C2; unipolar; 600V; 38A; 277W; TO263
Type of transistor: N-MOSFET
Technology: WMOS™ C2
Polarisation: unipolar
Drain-source voltage: 600V
Drain current: 38A
Power dissipation: 277W
Case: TO263
Gate-source voltage: ±30V
On-state resistance: 99mΩ
Mounting: SMD
Kind of package: reel; tape
Kind of channel: enhancement
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; WMOS™ C2; unipolar; 600V; 38A; 277W; TO263
Type of transistor: N-MOSFET
Technology: WMOS™ C2
Polarisation: unipolar
Drain-source voltage: 600V
Drain current: 38A
Power dissipation: 277W
Case: TO263
Gate-source voltage: ±30V
On-state resistance: 99mΩ
Mounting: SMD
Kind of package: reel; tape
Kind of channel: enhancement
на замовлення 371 шт:
термін постачання 21-30 дні (днів)| Кількість | Ціна |
|---|---|
| 3+ | 179.28 грн |
| 10+ | 154.17 грн |
| 50+ | 147.61 грн |
| 100+ | 136.13 грн |
| WMM38N60C2 |
![]() |
Виробник: WAYON
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; WMOS™ C2; unipolar; 600V; 38A; 277W; TO263
Type of transistor: N-MOSFET
Technology: WMOS™ C2
Polarisation: unipolar
Drain-source voltage: 600V
Drain current: 38A
Power dissipation: 277W
Case: TO263
Gate-source voltage: ±30V
On-state resistance: 99mΩ
Mounting: SMD
Kind of package: reel; tape
Kind of channel: enhancement
кількість в упаковці: 1 шт
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; WMOS™ C2; unipolar; 600V; 38A; 277W; TO263
Type of transistor: N-MOSFET
Technology: WMOS™ C2
Polarisation: unipolar
Drain-source voltage: 600V
Drain current: 38A
Power dissipation: 277W
Case: TO263
Gate-source voltage: ±30V
On-state resistance: 99mΩ
Mounting: SMD
Kind of package: reel; tape
Kind of channel: enhancement
кількість в упаковці: 1 шт
на замовлення 371 шт:
термін постачання 14-21 дні (днів)| Кількість | Ціна |
|---|---|
| 2+ | 215.13 грн |
| 10+ | 192.12 грн |
| 50+ | 177.13 грн |
| 100+ | 163.36 грн |
| WMM40N20JN |
![]() |
Виробник: WAYON
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 200V; 21A; Idm: 110A; 89W; TO263
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 200V
Drain current: 21A
Pulsed drain current: 110A
Power dissipation: 89W
Case: TO263
Gate-source voltage: ±20V
On-state resistance: 46mΩ
Mounting: SMD
Gate charge: 7.7nC
Kind of package: reel; tape
Kind of channel: enhancement
Reverse recovery time: 141ns
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 200V; 21A; Idm: 110A; 89W; TO263
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 200V
Drain current: 21A
Pulsed drain current: 110A
Power dissipation: 89W
Case: TO263
Gate-source voltage: ±20V
On-state resistance: 46mΩ
Mounting: SMD
Gate charge: 7.7nC
Kind of package: reel; tape
Kind of channel: enhancement
Reverse recovery time: 141ns
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| WMM4N90D1 |
Виробник: WAYON
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; WMOS™ D1; unipolar; 900V; 4A; Idm: 16A; 65W
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 900V
Drain current: 4A
Case: TO263
Gate-source voltage: ±30V
On-state resistance: 2.9Ω
Mounting: SMD
Kind of package: reel; tape
Kind of channel: enhancement
Technology: WMOS™ D1
Pulsed drain current: 16A
Power dissipation: 65W
Gate charge: 26nC
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; WMOS™ D1; unipolar; 900V; 4A; Idm: 16A; 65W
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 900V
Drain current: 4A
Case: TO263
Gate-source voltage: ±30V
On-state resistance: 2.9Ω
Mounting: SMD
Kind of package: reel; tape
Kind of channel: enhancement
Technology: WMOS™ D1
Pulsed drain current: 16A
Power dissipation: 65W
Gate charge: 26nC
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| WMM4N90D1B |
Виробник: WAYON
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; WMOS™ D1; unipolar; 900V; 4A; Idm: 16A; 63W
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 900V
Drain current: 4A
Case: TO263
Gate-source voltage: ±30V
On-state resistance: 1.85Ω
Mounting: SMD
Kind of package: reel; tape
Kind of channel: enhancement
Technology: WMOS™ D1
Pulsed drain current: 16A
Power dissipation: 63W
Gate charge: 34nC
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; WMOS™ D1; unipolar; 900V; 4A; Idm: 16A; 63W
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 900V
Drain current: 4A
Case: TO263
Gate-source voltage: ±30V
On-state resistance: 1.85Ω
Mounting: SMD
Kind of package: reel; tape
Kind of channel: enhancement
Technology: WMOS™ D1
Pulsed drain current: 16A
Power dissipation: 63W
Gate charge: 34nC
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| WMM50N20JN |
![]() |
Виробник: WAYON
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 200V; 24A; Idm: 120A; 90W; TO263
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 200V
Drain current: 24A
Pulsed drain current: 120A
Power dissipation: 90W
Case: TO263
Gate-source voltage: ±20V
On-state resistance: 35mΩ
Mounting: SMD
Gate charge: 10nC
Kind of package: reel; tape
Kind of channel: enhancement
Reverse recovery time: 138ns
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 200V; 24A; Idm: 120A; 90W; TO263
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 200V
Drain current: 24A
Pulsed drain current: 120A
Power dissipation: 90W
Case: TO263
Gate-source voltage: ±20V
On-state resistance: 35mΩ
Mounting: SMD
Gate charge: 10nC
Kind of package: reel; tape
Kind of channel: enhancement
Reverse recovery time: 138ns
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| WMM50P04T1 |
Виробник: WAYON
WMM50P04T1-CYG SMD P channel transistors
WMM50P04T1-CYG SMD P channel transistors
на замовлення 56 шт:
термін постачання 14-21 дні (днів)| Кількість | Ціна |
|---|---|
| 5+ | 79.38 грн |
| 39+ | 30.11 грн |
| 107+ | 28.44 грн |
| WMM53N60C4 |
Виробник: WAYON
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; WMOS™ C4; unipolar; 600V; 26A; Idm: 90A; 350W
Type of transistor: N-MOSFET
Technology: WMOS™ C4
Polarisation: unipolar
Drain-source voltage: 600V
Drain current: 26A
Pulsed drain current: 90A
Power dissipation: 350W
Case: TO263
Gate-source voltage: ±30V
On-state resistance: 70mΩ
Mounting: SMD
Gate charge: 58nC
Kind of package: reel; tape
Kind of channel: enhancement
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; WMOS™ C4; unipolar; 600V; 26A; Idm: 90A; 350W
Type of transistor: N-MOSFET
Technology: WMOS™ C4
Polarisation: unipolar
Drain-source voltage: 600V
Drain current: 26A
Pulsed drain current: 90A
Power dissipation: 350W
Case: TO263
Gate-source voltage: ±30V
On-state resistance: 70mΩ
Mounting: SMD
Gate charge: 58nC
Kind of package: reel; tape
Kind of channel: enhancement
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В кошику
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| WMM53N60F2 |
Виробник: WAYON
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; WMOS™ F2; unipolar; 600V; 26A; Idm: 90A; 350W
Type of transistor: N-MOSFET
Technology: WMOS™ F2
Polarisation: unipolar
Drain-source voltage: 600V
Drain current: 26A
Pulsed drain current: 90A
Power dissipation: 350W
Case: TO263
Gate-source voltage: ±30V
On-state resistance: 78mΩ
Mounting: SMD
Gate charge: 58nC
Kind of package: reel; tape
Kind of channel: enhancement
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; WMOS™ F2; unipolar; 600V; 26A; Idm: 90A; 350W
Type of transistor: N-MOSFET
Technology: WMOS™ F2
Polarisation: unipolar
Drain-source voltage: 600V
Drain current: 26A
Pulsed drain current: 90A
Power dissipation: 350W
Case: TO263
Gate-source voltage: ±30V
On-state resistance: 78mΩ
Mounting: SMD
Gate charge: 58nC
Kind of package: reel; tape
Kind of channel: enhancement
товару немає в наявності
В кошику
од. на суму грн.
| WMM6N90D1 |
Виробник: WAYON
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; WMOS™ D1; unipolar; 900V; 6A; Idm: 24A; 100W
Type of transistor: N-MOSFET
Technology: WMOS™ D1
Polarisation: unipolar
Drain-source voltage: 900V
Drain current: 6A
Pulsed drain current: 24A
Power dissipation: 100W
Case: TO263
Gate-source voltage: ±30V
On-state resistance: 1.7Ω
Mounting: SMD
Gate charge: 86.2nC
Kind of package: reel; tape
Kind of channel: enhancement
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; WMOS™ D1; unipolar; 900V; 6A; Idm: 24A; 100W
Type of transistor: N-MOSFET
Technology: WMOS™ D1
Polarisation: unipolar
Drain-source voltage: 900V
Drain current: 6A
Pulsed drain current: 24A
Power dissipation: 100W
Case: TO263
Gate-source voltage: ±30V
On-state resistance: 1.7Ω
Mounting: SMD
Gate charge: 86.2nC
Kind of package: reel; tape
Kind of channel: enhancement
товару немає в наявності
В кошику
од. на суму грн.
| WMM6N90D1B |
Виробник: WAYON
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 900V; 6A; TO263
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 900V
Drain current: 6A
Case: TO263
Gate-source voltage: ±30V
On-state resistance: 2.3Ω
Mounting: SMD
Kind of package: reel; tape
Kind of channel: enhancement
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 900V; 6A; TO263
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 900V
Drain current: 6A
Case: TO263
Gate-source voltage: ±30V
On-state resistance: 2.3Ω
Mounting: SMD
Kind of package: reel; tape
Kind of channel: enhancement
товару немає в наявності
В кошику
од. на суму грн.
| WMM80N08TS |
Виробник: WAYON
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 80V; 80A; Idm: 320A; 133W; TO263
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 80V
Drain current: 80A
Pulsed drain current: 320A
Power dissipation: 133W
Case: TO263
Gate-source voltage: ±20V
On-state resistance: 12mΩ
Mounting: SMD
Gate charge: 68.7nC
Kind of package: reel; tape
Kind of channel: enhancement
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 80V; 80A; Idm: 320A; 133W; TO263
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 80V
Drain current: 80A
Pulsed drain current: 320A
Power dissipation: 133W
Case: TO263
Gate-source voltage: ±20V
On-state resistance: 12mΩ
Mounting: SMD
Gate charge: 68.7nC
Kind of package: reel; tape
Kind of channel: enhancement
на замовлення 72 шт:
термін постачання 21-30 дні (днів)| Кількість | Ціна |
|---|---|
| 7+ | 66.24 грн |
| 9+ | 49.20 грн |
| 25+ | 41.17 грн |
| WMM80N08TS |
Виробник: WAYON
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 80V; 80A; Idm: 320A; 133W; TO263
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 80V
Drain current: 80A
Pulsed drain current: 320A
Power dissipation: 133W
Case: TO263
Gate-source voltage: ±20V
On-state resistance: 12mΩ
Mounting: SMD
Gate charge: 68.7nC
Kind of package: reel; tape
Kind of channel: enhancement
кількість в упаковці: 1 шт
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 80V; 80A; Idm: 320A; 133W; TO263
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 80V
Drain current: 80A
Pulsed drain current: 320A
Power dissipation: 133W
Case: TO263
Gate-source voltage: ±20V
On-state resistance: 12mΩ
Mounting: SMD
Gate charge: 68.7nC
Kind of package: reel; tape
Kind of channel: enhancement
кількість в упаковці: 1 шт
на замовлення 72 шт:
термін постачання 14-21 дні (днів)| Кількість | Ціна |
|---|---|
| 4+ | 79.48 грн |
| 5+ | 61.32 грн |
| 25+ | 49.40 грн |
| 100+ | 44.28 грн |
| 800+ | 43.10 грн |
| WMM80P04TS |
Виробник: WAYON
WMM80P04TS-CYG SMD P channel transistors
WMM80P04TS-CYG SMD P channel transistors
на замовлення 56 шт:
термін постачання 14-21 дні (днів)| Кількість | Ціна |
|---|---|
| 4+ | 87.32 грн |
| 27+ | 44.38 грн |
| 73+ | 42.02 грн |
| WMM90N08TS |
Виробник: WAYON
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 80V; 90A; Idm: 360A; 135.9W; TO263
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 80V
Case: TO263
Gate-source voltage: ±20V
On-state resistance: 8.5mΩ
Mounting: SMD
Kind of package: reel; tape
Kind of channel: enhancement
Power dissipation: 135.9W
Drain current: 90A
Pulsed drain current: 360A
Gate charge: 111nC
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 80V; 90A; Idm: 360A; 135.9W; TO263
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 80V
Case: TO263
Gate-source voltage: ±20V
On-state resistance: 8.5mΩ
Mounting: SMD
Kind of package: reel; tape
Kind of channel: enhancement
Power dissipation: 135.9W
Drain current: 90A
Pulsed drain current: 360A
Gate charge: 111nC
на замовлення 86 шт:
термін постачання 21-30 дні (днів)| Кількість | Ціна |
|---|---|
| 7+ | 63.59 грн |
| 9+ | 50.52 грн |
| 25+ | 44.78 грн |
| WMM90N08TS |
Виробник: WAYON
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 80V; 90A; Idm: 360A; 135.9W; TO263
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 80V
Case: TO263
Gate-source voltage: ±20V
On-state resistance: 8.5mΩ
Mounting: SMD
Kind of package: reel; tape
Kind of channel: enhancement
Power dissipation: 135.9W
Drain current: 90A
Pulsed drain current: 360A
Gate charge: 111nC
кількість в упаковці: 1 шт
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 80V; 90A; Idm: 360A; 135.9W; TO263
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 80V
Case: TO263
Gate-source voltage: ±20V
On-state resistance: 8.5mΩ
Mounting: SMD
Kind of package: reel; tape
Kind of channel: enhancement
Power dissipation: 135.9W
Drain current: 90A
Pulsed drain current: 360A
Gate charge: 111nC
кількість в упаковці: 1 шт
на замовлення 86 шт:
термін постачання 14-21 дні (днів)| Кількість | Ціна |
|---|---|
| 5+ | 62.95 грн |
| 25+ | 53.73 грн |
| 100+ | 48.22 грн |
| 800+ | 47.33 грн |
| WMM95P06TS |
Виробник: WAYON
WMM95P06TS-CYG SMD P channel transistors
WMM95P06TS-CYG SMD P channel transistors
на замовлення 62 шт:
термін постачання 14-21 дні (днів)| Кількість | Ціна |
|---|---|
| 4+ | 89.55 грн |
| 20+ | 59.34 грн |
| 55+ | 56.09 грн |
| WMMB015N08HGS |
Виробник: WAYON
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 80V; 358A; Idm: 1432A; 347.2W
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 80V
Drain current: 358A
Pulsed drain current: 1432A
Power dissipation: 347.2W
Case: TO263-7
Gate-source voltage: ±20V
On-state resistance: 1.5mΩ
Mounting: SMD
Gate charge: 238nC
Kind of package: reel; tape
Kind of channel: enhancement
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 80V; 358A; Idm: 1432A; 347.2W
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 80V
Drain current: 358A
Pulsed drain current: 1432A
Power dissipation: 347.2W
Case: TO263-7
Gate-source voltage: ±20V
On-state resistance: 1.5mΩ
Mounting: SMD
Gate charge: 238nC
Kind of package: reel; tape
Kind of channel: enhancement
на замовлення 17 шт:
термін постачання 21-30 дні (днів)| Кількість | Ціна |
|---|---|
| 3+ | 181.93 грн |
| 5+ | 160.73 грн |
| WMMB015N08HGS |
Виробник: WAYON
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 80V; 358A; Idm: 1432A; 347.2W
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 80V
Drain current: 358A
Pulsed drain current: 1432A
Power dissipation: 347.2W
Case: TO263-7
Gate-source voltage: ±20V
On-state resistance: 1.5mΩ
Mounting: SMD
Gate charge: 238nC
Kind of package: reel; tape
Kind of channel: enhancement
кількість в упаковці: 1 шт
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 80V; 358A; Idm: 1432A; 347.2W
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 80V
Drain current: 358A
Pulsed drain current: 1432A
Power dissipation: 347.2W
Case: TO263-7
Gate-source voltage: ±20V
On-state resistance: 1.5mΩ
Mounting: SMD
Gate charge: 238nC
Kind of package: reel; tape
Kind of channel: enhancement
кількість в упаковці: 1 шт
на замовлення 17 шт:
термін постачання 14-21 дні (днів)| Кількість | Ціна |
|---|---|
| 2+ | 218.31 грн |
| 5+ | 200.30 грн |
| 25+ | 168.28 грн |
| 100+ | 152.53 грн |
| 800+ | 147.61 грн |
| WMMB020N10HG4 |
Виробник: WAYON
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 100V; 238A; Idm: 952A; 277.8W
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 100V
Drain current: 238A
Pulsed drain current: 952A
Power dissipation: 277.8W
Case: TO263-7
Gate-source voltage: ±20V
On-state resistance: 2.5mΩ
Mounting: SMD
Gate charge: 123.4nC
Kind of package: reel; tape
Kind of channel: enhancement
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 100V; 238A; Idm: 952A; 277.8W
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 100V
Drain current: 238A
Pulsed drain current: 952A
Power dissipation: 277.8W
Case: TO263-7
Gate-source voltage: ±20V
On-state resistance: 2.5mΩ
Mounting: SMD
Gate charge: 123.4nC
Kind of package: reel; tape
Kind of channel: enhancement
на замовлення 285 шт:
термін постачання 21-30 дні (днів)| Кількість | Ціна |
|---|---|
| 3+ | 160.73 грн |
| 5+ | 141.05 грн |
| 25+ | 124.65 грн |
| 100+ | 111.53 грн |
| WMMB020N10HG4 |
Виробник: WAYON
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 100V; 238A; Idm: 952A; 277.8W
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 100V
Drain current: 238A
Pulsed drain current: 952A
Power dissipation: 277.8W
Case: TO263-7
Gate-source voltage: ±20V
On-state resistance: 2.5mΩ
Mounting: SMD
Gate charge: 123.4nC
Kind of package: reel; tape
Kind of channel: enhancement
кількість в упаковці: 1 шт
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 100V; 238A; Idm: 952A; 277.8W
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 100V
Drain current: 238A
Pulsed drain current: 952A
Power dissipation: 277.8W
Case: TO263-7
Gate-source voltage: ±20V
On-state resistance: 2.5mΩ
Mounting: SMD
Gate charge: 123.4nC
Kind of package: reel; tape
Kind of channel: enhancement
кількість в упаковці: 1 шт
на замовлення 285 шт:
термін постачання 14-21 дні (днів)| Кількість | Ціна |
|---|---|
| 2+ | 192.88 грн |
| 5+ | 175.77 грн |
| 25+ | 149.58 грн |
| 100+ | 133.83 грн |
| 800+ | 129.90 грн |
| WMN07N60C2 |
![]() |
Виробник: WAYON
Category: THT N channel transistors
Description: Transistor: N-MOSFET; WMOS™ C2; unipolar; 600V; 5A; 42W; TO262
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 600V
Drain current: 5A
Power dissipation: 42W
Case: TO262
Gate-source voltage: ±30V
On-state resistance: 1.14Ω
Mounting: THT
Kind of package: tube
Kind of channel: enhancement
Technology: WMOS™ C2
Category: THT N channel transistors
Description: Transistor: N-MOSFET; WMOS™ C2; unipolar; 600V; 5A; 42W; TO262
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 600V
Drain current: 5A
Power dissipation: 42W
Case: TO262
Gate-source voltage: ±30V
On-state resistance: 1.14Ω
Mounting: THT
Kind of package: tube
Kind of channel: enhancement
Technology: WMOS™ C2
товару немає в наявності
В кошику
од. на суму грн.
| WMN07N65C2 |
![]() |
Виробник: WAYON
Category: THT N channel transistors
Description: Transistor: N-MOSFET; WMOS™ C2; unipolar; 650V; 5A; 42W; TO262
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 650V
Drain current: 5A
Power dissipation: 42W
Case: TO262
Gate-source voltage: ±30V
On-state resistance: 1.14Ω
Mounting: THT
Kind of package: tube
Kind of channel: enhancement
Technology: WMOS™ C2
Category: THT N channel transistors
Description: Transistor: N-MOSFET; WMOS™ C2; unipolar; 650V; 5A; 42W; TO262
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 650V
Drain current: 5A
Power dissipation: 42W
Case: TO262
Gate-source voltage: ±30V
On-state resistance: 1.14Ω
Mounting: THT
Kind of package: tube
Kind of channel: enhancement
Technology: WMOS™ C2
товару немає в наявності
В кошику
од. на суму грн.
| WMN07N80M3 |
![]() |
Виробник: WAYON
Category: THT N channel transistors
Description: Transistor: N-MOSFET; WMOS™ M3; unipolar; 800V; 6.8A; 55W; TO262
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 800V
Drain current: 6.8A
Power dissipation: 55W
Case: TO262
Gate-source voltage: ±30V
On-state resistance: 1.8Ω
Mounting: THT
Kind of package: tube
Kind of channel: enhancement
Technology: WMOS™ M3
Category: THT N channel transistors
Description: Transistor: N-MOSFET; WMOS™ M3; unipolar; 800V; 6.8A; 55W; TO262
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 800V
Drain current: 6.8A
Power dissipation: 55W
Case: TO262
Gate-source voltage: ±30V
On-state resistance: 1.8Ω
Mounting: THT
Kind of package: tube
Kind of channel: enhancement
Technology: WMOS™ M3
товару немає в наявності
В кошику
од. на суму грн.
| WMN08N80M3 |
![]() |
Виробник: WAYON
Category: THT N channel transistors
Description: Transistor: N-MOSFET; WMOS™ M3; unipolar; 800V; 7A; 70W; TO262
Type of transistor: N-MOSFET
Technology: WMOS™ M3
Polarisation: unipolar
Drain-source voltage: 800V
Drain current: 7A
Power dissipation: 70W
Case: TO262
Gate-source voltage: ±30V
On-state resistance: 1.38Ω
Mounting: THT
Kind of package: tube
Kind of channel: enhancement
Category: THT N channel transistors
Description: Transistor: N-MOSFET; WMOS™ M3; unipolar; 800V; 7A; 70W; TO262
Type of transistor: N-MOSFET
Technology: WMOS™ M3
Polarisation: unipolar
Drain-source voltage: 800V
Drain current: 7A
Power dissipation: 70W
Case: TO262
Gate-source voltage: ±30V
On-state resistance: 1.38Ω
Mounting: THT
Kind of package: tube
Kind of channel: enhancement
товару немає в наявності
В кошику
од. на суму грн.
| WMN09N60C2 |
![]() |
Виробник: WAYON
Category: THT N channel transistors
Description: Transistor: N-MOSFET; WMOS™ C2; unipolar; 600V; 6A; 45W; TO262
Type of transistor: N-MOSFET
Technology: WMOS™ C2
Polarisation: unipolar
Drain-source voltage: 600V
Drain current: 6A
Power dissipation: 45W
Case: TO262
Gate-source voltage: ±30V
On-state resistance: 940mΩ
Mounting: THT
Kind of package: tube
Kind of channel: enhancement
Category: THT N channel transistors
Description: Transistor: N-MOSFET; WMOS™ C2; unipolar; 600V; 6A; 45W; TO262
Type of transistor: N-MOSFET
Technology: WMOS™ C2
Polarisation: unipolar
Drain-source voltage: 600V
Drain current: 6A
Power dissipation: 45W
Case: TO262
Gate-source voltage: ±30V
On-state resistance: 940mΩ
Mounting: THT
Kind of package: tube
Kind of channel: enhancement
на замовлення 27 шт:
термін постачання 21-30 дні (днів)| Кількість | Ціна |
|---|---|
| 13+ | 36.21 грн |
| 21+ | 20.01 грн |
| 25+ | 17.88 грн |
| WMN09N60C2 |
![]() |
Виробник: WAYON
Category: THT N channel transistors
Description: Transistor: N-MOSFET; WMOS™ C2; unipolar; 600V; 6A; 45W; TO262
Type of transistor: N-MOSFET
Technology: WMOS™ C2
Polarisation: unipolar
Drain-source voltage: 600V
Drain current: 6A
Power dissipation: 45W
Case: TO262
Gate-source voltage: ±30V
On-state resistance: 940mΩ
Mounting: THT
Kind of package: tube
Kind of channel: enhancement
кількість в упаковці: 1 шт
Category: THT N channel transistors
Description: Transistor: N-MOSFET; WMOS™ C2; unipolar; 600V; 6A; 45W; TO262
Type of transistor: N-MOSFET
Technology: WMOS™ C2
Polarisation: unipolar
Drain-source voltage: 600V
Drain current: 6A
Power dissipation: 45W
Case: TO262
Gate-source voltage: ±30V
On-state resistance: 940mΩ
Mounting: THT
Kind of package: tube
Kind of channel: enhancement
кількість в упаковці: 1 шт
на замовлення 27 шт:
термін постачання 14-21 дні (днів)| Кількість | Ціна |
|---|---|
| 8+ | 43.45 грн |
| 13+ | 24.93 грн |
| 25+ | 21.45 грн |
| 100+ | 19.39 грн |
| 500+ | 18.40 грн |
| WMN10N60C2 |
![]() |
Виробник: WAYON
Category: THT N channel transistors
Description: Transistor: N-MOSFET; WMOS™ C2; unipolar; 600V; 8A; 57W; TO262
Type of transistor: N-MOSFET
Technology: WMOS™ C2
Polarisation: unipolar
Drain-source voltage: 600V
Drain current: 8A
Power dissipation: 57W
Case: TO262
Gate-source voltage: ±30V
On-state resistance: 690mΩ
Mounting: THT
Kind of package: tube
Kind of channel: enhancement
Category: THT N channel transistors
Description: Transistor: N-MOSFET; WMOS™ C2; unipolar; 600V; 8A; 57W; TO262
Type of transistor: N-MOSFET
Technology: WMOS™ C2
Polarisation: unipolar
Drain-source voltage: 600V
Drain current: 8A
Power dissipation: 57W
Case: TO262
Gate-source voltage: ±30V
On-state resistance: 690mΩ
Mounting: THT
Kind of package: tube
Kind of channel: enhancement
на замовлення 2 шт:
термін постачання 21-30 дні (днів)| Кількість | Ціна |
|---|---|
| 2+ | 220.78 грн |
| WMN10N60C2 |
![]() |
Виробник: WAYON
Category: THT N channel transistors
Description: Transistor: N-MOSFET; WMOS™ C2; unipolar; 600V; 8A; 57W; TO262
Type of transistor: N-MOSFET
Technology: WMOS™ C2
Polarisation: unipolar
Drain-source voltage: 600V
Drain current: 8A
Power dissipation: 57W
Case: TO262
Gate-source voltage: ±30V
On-state resistance: 690mΩ
Mounting: THT
Kind of package: tube
Kind of channel: enhancement
кількість в упаковці: 1 шт
Category: THT N channel transistors
Description: Transistor: N-MOSFET; WMOS™ C2; unipolar; 600V; 8A; 57W; TO262
Type of transistor: N-MOSFET
Technology: WMOS™ C2
Polarisation: unipolar
Drain-source voltage: 600V
Drain current: 8A
Power dissipation: 57W
Case: TO262
Gate-source voltage: ±30V
On-state resistance: 690mΩ
Mounting: THT
Kind of package: tube
Kind of channel: enhancement
кількість в упаковці: 1 шт
на замовлення 2 шт:
термін постачання 14-21 дні (днів)| Кількість | Ціна |
|---|---|
| 2+ | 158.97 грн |
| 5+ | 61.32 грн |
| 25+ | 38.58 грн |
| 100+ | 34.84 грн |
| WMN10N65C2 |
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Виробник: WAYON
Category: THT N channel transistors
Description: Transistor: N-MOSFET; WMOS™ C2; unipolar; 650V; 8A; 57W; TO262
Type of transistor: N-MOSFET
Technology: WMOS™ C2
Polarisation: unipolar
Drain-source voltage: 650V
Drain current: 8A
Power dissipation: 57W
Case: TO262
Gate-source voltage: ±30V
On-state resistance: 690mΩ
Mounting: THT
Kind of package: tube
Kind of channel: enhancement
Category: THT N channel transistors
Description: Transistor: N-MOSFET; WMOS™ C2; unipolar; 650V; 8A; 57W; TO262
Type of transistor: N-MOSFET
Technology: WMOS™ C2
Polarisation: unipolar
Drain-source voltage: 650V
Drain current: 8A
Power dissipation: 57W
Case: TO262
Gate-source voltage: ±30V
On-state resistance: 690mΩ
Mounting: THT
Kind of package: tube
Kind of channel: enhancement
на замовлення 17 шт:
термін постачання 21-30 дні (днів)| Кількість | Ціна |
|---|---|
| 13+ | 36.21 грн |
| 17+ | 25.09 грн |
| WMN10N65C2 |
![]() |
Виробник: WAYON
Category: THT N channel transistors
Description: Transistor: N-MOSFET; WMOS™ C2; unipolar; 650V; 8A; 57W; TO262
Type of transistor: N-MOSFET
Technology: WMOS™ C2
Polarisation: unipolar
Drain-source voltage: 650V
Drain current: 8A
Power dissipation: 57W
Case: TO262
Gate-source voltage: ±30V
On-state resistance: 690mΩ
Mounting: THT
Kind of package: tube
Kind of channel: enhancement
кількість в упаковці: 1 шт
Category: THT N channel transistors
Description: Transistor: N-MOSFET; WMOS™ C2; unipolar; 650V; 8A; 57W; TO262
Type of transistor: N-MOSFET
Technology: WMOS™ C2
Polarisation: unipolar
Drain-source voltage: 650V
Drain current: 8A
Power dissipation: 57W
Case: TO262
Gate-source voltage: ±30V
On-state resistance: 690mΩ
Mounting: THT
Kind of package: tube
Kind of channel: enhancement
кількість в упаковці: 1 шт
на замовлення 17 шт:
термін постачання 14-21 дні (днів)| Кількість | Ціна |
|---|---|
| 8+ | 43.45 грн |
| 10+ | 31.27 грн |
| 25+ | 26.57 грн |
| 100+ | 24.01 грн |
| 500+ | 22.93 грн |
| WMN10N70C2 |
![]() |
Виробник: WAYON
Category: THT N channel transistors
Description: Transistor: N-MOSFET; WMOS™ C2; unipolar; 700V; 7.5A; 57W; TO262
Type of transistor: N-MOSFET
Technology: WMOS™ C2
Polarisation: unipolar
Drain-source voltage: 700V
Drain current: 7.5A
Power dissipation: 57W
Case: TO262
Gate-source voltage: ±30V
On-state resistance: 920mΩ
Mounting: THT
Kind of package: tube
Kind of channel: enhancement
Category: THT N channel transistors
Description: Transistor: N-MOSFET; WMOS™ C2; unipolar; 700V; 7.5A; 57W; TO262
Type of transistor: N-MOSFET
Technology: WMOS™ C2
Polarisation: unipolar
Drain-source voltage: 700V
Drain current: 7.5A
Power dissipation: 57W
Case: TO262
Gate-source voltage: ±30V
On-state resistance: 920mΩ
Mounting: THT
Kind of package: tube
Kind of channel: enhancement
товару немає в наявності
В кошику
од. на суму грн.
| WMN10N80M3 |
![]() |
Виробник: WAYON
Category: THT N channel transistors
Description: Transistor: N-MOSFET; WMOS™ M3; unipolar; 800V; 10A; 85W; TO262
Type of transistor: N-MOSFET
Technology: WMOS™ M3
Polarisation: unipolar
Drain-source voltage: 800V
Drain current: 10A
Power dissipation: 85W
Case: TO262
Gate-source voltage: ±30V
On-state resistance: 1.03Ω
Mounting: THT
Kind of package: tube
Kind of channel: enhancement
Category: THT N channel transistors
Description: Transistor: N-MOSFET; WMOS™ M3; unipolar; 800V; 10A; 85W; TO262
Type of transistor: N-MOSFET
Technology: WMOS™ M3
Polarisation: unipolar
Drain-source voltage: 800V
Drain current: 10A
Power dissipation: 85W
Case: TO262
Gate-source voltage: ±30V
On-state resistance: 1.03Ω
Mounting: THT
Kind of package: tube
Kind of channel: enhancement
товару немає в наявності
В кошику
од. на суму грн.










