| Фото | Назва | Виробник | Інформація | Доступність | Ціна без ПДВ | ||||||||||||||
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WMM020N10HGS | WAYON |
Category: SMD N channel transistorsDescription: Transistor: N-MOSFET; unipolar; 100V; 280A; Idm: 1120A; 390.6W Type of transistor: N-MOSFET Polarisation: unipolar Drain-source voltage: 100V Drain current: 280A Pulsed drain current: 1120A Power dissipation: 390.6W Case: TO263 Gate-source voltage: ±20V On-state resistance: 2.2mΩ Mounting: SMD Gate charge: 255nC Kind of package: reel; tape Kind of channel: enhancement |
на замовлення 66 шт: термін постачання 14-30 дні (днів) |
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WMM028N10HG2 | WAYON |
Category: SMD N channel transistors Description: Transistor: N-MOSFET; unipolar; 100V; 245A; Idm: 780A; 278W; TO263 Type of transistor: N-MOSFET Polarisation: unipolar Drain-source voltage: 100V Drain current: 245A Pulsed drain current: 780A Power dissipation: 278W Case: TO263 Gate-source voltage: ±20V On-state resistance: 2.8mΩ Mounting: SMD Gate charge: 98nC Kind of package: reel; tape Kind of channel: enhancement |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||||||||
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WMM028N10HGS | WAYON |
Category: SMD N channel transistors Description: Transistor: N-MOSFET; unipolar; 100V; 257A; Idm: 1028A; 379W; TO263 Type of transistor: N-MOSFET Polarisation: unipolar Drain-source voltage: 100V Drain current: 257A Pulsed drain current: 1028A Power dissipation: 379W Case: TO263 Gate-source voltage: ±20V On-state resistance: 2.8mΩ Mounting: SMD Gate charge: 134nC Kind of package: reel; tape Kind of channel: enhancement |
товару немає в наявності |
Мінімальне замовлення: 800 шт В кошику од. на суму грн. | ||||||||||||||
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WMM030N06HG4 | WAYON |
Category: SMD N channel transistors Description: Transistor: N-MOSFET; unipolar; 60V; 184A; Idm: 736A; 208.3W; TO263 Type of transistor: N-MOSFET Polarisation: unipolar Drain-source voltage: 60V Drain current: 184A Pulsed drain current: 736A Power dissipation: 208.3W Case: TO263 Gate-source voltage: ±20V On-state resistance: 3mΩ Mounting: SMD Gate charge: 68nC Kind of package: reel; tape Kind of channel: enhancement |
на замовлення 19 шт: термін постачання 14-30 дні (днів) |
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| WMM040N08HGS | WAYON |
Category: SMD N channel transistors Description: Transistor: N-MOSFET; unipolar; 80V; 180A; Idm: 720A; 227.3W; TO263 Type of transistor: N-MOSFET Polarisation: unipolar Drain-source voltage: 80V Drain current: 180A Power dissipation: 227.3W Case: TO263 Gate-source voltage: ±20V On-state resistance: 4.8mΩ Mounting: SMD Kind of channel: enhancement Kind of package: reel; tape Pulsed drain current: 720A Gate charge: 78.5nC |
на замовлення 96 шт: термін постачання 14-30 дні (днів) |
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WMM040N15HG2 | WAYON |
Category: SMD N channel transistors Description: Transistor: N-MOSFET; unipolar; 150V; 126A; Idm: 800A; 378.7W; TO263 Type of transistor: N-MOSFET Polarisation: unipolar Drain-source voltage: 150V Drain current: 126A Pulsed drain current: 800A Power dissipation: 378.7W Case: TO263 Gate-source voltage: ±20V On-state resistance: 4.6mΩ Mounting: SMD Gate charge: 74.3nC Kind of package: reel; tape Kind of channel: enhancement |
на замовлення 34 шт: термін постачання 14-30 дні (днів) |
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WMM043N10HGS | WAYON |
Category: SMD N channel transistors Description: Transistor: N-MOSFET; unipolar; 100V; 145A; Idm: 580A; 208W; TO263 Type of transistor: N-MOSFET Polarisation: unipolar Drain-source voltage: 100V Drain current: 145A Pulsed drain current: 580A Power dissipation: 208W Case: TO263 Gate-source voltage: ±20V On-state resistance: 4.5mΩ Mounting: SMD Gate charge: 98.4nC Kind of package: reel; tape Kind of channel: enhancement |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||||||||
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WMM048NV6HG4 | WAYON |
Category: SMD N channel transistors Description: Transistor: N-MOSFET; unipolar; 65V; 110A; Idm: 440A; 104.2W; TO263 Case: TO263 Kind of package: reel; tape Kind of channel: enhancement Type of transistor: N-MOSFET Mounting: SMD Polarisation: unipolar Gate charge: 28.5nC On-state resistance: 5.2mΩ Gate-source voltage: ±20V Drain current: 110A Drain-source voltage: 65V Power dissipation: 104.2W Pulsed drain current: 440A |
на замовлення 70 шт: термін постачання 14-30 дні (днів) |
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WMM053N10HGS | WAYON |
Category: SMD N channel transistors Description: Transistor: N-MOSFET; unipolar; 100V; 120A; Idm: 480A; 164.5W; TO263 Type of transistor: N-MOSFET Polarisation: unipolar Drain-source voltage: 100V Drain current: 120A Pulsed drain current: 480A Power dissipation: 164.5W Case: TO263 Gate-source voltage: ±20V On-state resistance: 5.5mΩ Mounting: SMD Gate charge: 82.5nC Kind of package: reel; tape Kind of channel: enhancement |
на замовлення 28 шт: термін постачання 14-30 дні (днів) |
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WMM053NV8HGS | WAYON |
Category: SMD N channel transistors Description: Transistor: N-MOSFET; unipolar; 85V; 125A; Idm: 500A; 162W; TO263 Type of transistor: N-MOSFET Polarisation: unipolar Drain-source voltage: 85V Drain current: 125A Pulsed drain current: 500A Power dissipation: 162W Case: TO263 Gate-source voltage: ±20V On-state resistance: 5.5mΩ Mounting: SMD Gate charge: 76.2nC Kind of package: reel; tape Kind of channel: enhancement |
на замовлення 183 шт: термін постачання 14-30 дні (днів) |
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WMM06N80M3 | WAYON |
Category: SMD N channel transistorsDescription: Transistor: N-MOSFET; WMOS™ M3; unipolar; 800V; 5A; 50W; TO263 Type of transistor: N-MOSFET Technology: WMOS™ M3 Polarisation: unipolar Drain-source voltage: 800V Drain current: 5A Power dissipation: 50W Case: TO263 Gate-source voltage: ±30V On-state resistance: 2Ω Mounting: SMD Kind of package: reel; tape Kind of channel: enhancement |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||||||||
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WMM07N60C2 | WAYON |
Category: SMD N channel transistorsDescription: Transistor: N-MOSFET; WMOS™ C2; unipolar; 600V; 5A; 42W; TO263 Type of transistor: N-MOSFET Technology: WMOS™ C2 Polarisation: unipolar Drain-source voltage: 600V Drain current: 5A Power dissipation: 42W Case: TO263 Gate-source voltage: ±30V On-state resistance: 1.14Ω Mounting: SMD Kind of package: reel; tape Kind of channel: enhancement |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||||||||
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WMM07N65C2 | WAYON |
Category: SMD N channel transistorsDescription: Transistor: N-MOSFET; WMOS™ C2; unipolar; 650V; 5A; 42W; TO263 Type of transistor: N-MOSFET Polarisation: unipolar Drain-source voltage: 650V Drain current: 5A Case: TO263 Gate-source voltage: ±30V On-state resistance: 1.14Ω Mounting: SMD Kind of channel: enhancement Power dissipation: 42W Technology: WMOS™ C2 Kind of package: reel; tape |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||||||||
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WMM07N80M3 | WAYON |
Category: SMD N channel transistorsDescription: Transistor: N-MOSFET; WMOS™ M3; unipolar; 800V; 6.8A; 55W; TO263 Type of transistor: N-MOSFET Technology: WMOS™ M3 Polarisation: unipolar Drain-source voltage: 800V Drain current: 6.8A Power dissipation: 55W Case: TO263 Gate-source voltage: ±30V On-state resistance: 1.8Ω Mounting: SMD Kind of package: reel; tape Kind of channel: enhancement |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||||||||
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WMM08N80M3 | WAYON |
Category: SMD N channel transistorsDescription: Transistor: N-MOSFET; WMOS™ M3; unipolar; 800V; 7A; 70W; TO263 Type of transistor: N-MOSFET Technology: WMOS™ M3 Polarisation: unipolar Drain-source voltage: 800V Drain current: 7A Power dissipation: 70W Case: TO263 Gate-source voltage: ±30V On-state resistance: 1.38Ω Mounting: SMD Kind of package: reel; tape Kind of channel: enhancement |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||||||||
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WMM09N60C2 | WAYON |
Category: SMD N channel transistorsDescription: Transistor: N-MOSFET; WMOS™ C2; unipolar; 600V; 6A; 45W; TO263 Type of transistor: N-MOSFET Polarisation: unipolar Drain-source voltage: 600V Drain current: 6A Power dissipation: 45W Case: TO263 Gate-source voltage: ±30V On-state resistance: 940mΩ Mounting: SMD Kind of package: reel; tape Kind of channel: enhancement Technology: WMOS™ C2 |
на замовлення 560 шт: термін постачання 14-30 дні (днів) |
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WMM09N65C2 | WAYON |
Category: SMD N channel transistorsDescription: Transistor: N-MOSFET; WMOS™ C2; unipolar; 650V; 6A; 45W; TO263 Type of transistor: N-MOSFET Technology: WMOS™ C2 Polarisation: unipolar Drain-source voltage: 650V Drain current: 6A Power dissipation: 45W Case: TO263 Gate-source voltage: ±30V On-state resistance: 940mΩ Mounting: SMD Kind of package: reel; tape Kind of channel: enhancement |
на замовлення 612 шт: термін постачання 14-30 дні (днів) |
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WMM10N60C2 | WAYON |
Category: SMD N channel transistorsDescription: Transistor: N-MOSFET; WMOS™ C2; unipolar; 600V; 8A; 57W; TO263 Type of transistor: N-MOSFET Polarisation: unipolar Drain-source voltage: 600V Drain current: 8A Power dissipation: 57W Case: TO263 Gate-source voltage: ±30V On-state resistance: 690mΩ Mounting: SMD Kind of channel: enhancement Kind of package: reel; tape Technology: WMOS™ C2 |
на замовлення 414 шт: термін постачання 14-30 дні (днів) |
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WMM10N65C2 | WAYON |
Category: SMD N channel transistorsDescription: Transistor: N-MOSFET; WMOS™ C2; unipolar; 650V; 8A; 57W; TO263 Type of transistor: N-MOSFET Polarisation: unipolar Drain-source voltage: 650V Drain current: 8A Power dissipation: 57W Case: TO263 Gate-source voltage: ±30V On-state resistance: 690mΩ Mounting: SMD Kind of channel: enhancement Kind of package: reel; tape Technology: WMOS™ C2 |
на замовлення 563 шт: термін постачання 14-30 дні (днів) |
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WMM10N70C2 | WAYON |
Category: SMD N channel transistorsDescription: Transistor: N-MOSFET; WMOS™ C2; unipolar; 700V; 7.5A; 57W; TO263 Power dissipation: 57W Polarisation: unipolar Technology: WMOS™ C2 Drain current: 7.5A Kind of channel: enhancement Drain-source voltage: 700V Type of transistor: N-MOSFET Gate-source voltage: ±30V Kind of package: reel; tape Case: TO263 On-state resistance: 920mΩ Mounting: SMD |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||||||||
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WMM10N80M3 | WAYON |
Category: SMD N channel transistorsDescription: Transistor: N-MOSFET; WMOS™ M3; unipolar; 800V; 10A; 85W; TO263 Power dissipation: 85W Polarisation: unipolar Technology: WMOS™ M3 Drain current: 10A Kind of channel: enhancement Drain-source voltage: 800V Type of transistor: N-MOSFET Gate-source voltage: ±30V Kind of package: reel; tape Case: TO263 On-state resistance: 1.03Ω Mounting: SMD |
товару немає в наявності |
Мінімальне замовлення: 800 шт В кошику од. на суму грн. | ||||||||||||||
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WMM11N60C2 | WAYON |
Category: SMD N channel transistorsDescription: Transistor: N-MOSFET; WMOS™ C2; unipolar; 600V; 9A; 63W; TO263 Type of transistor: N-MOSFET Technology: WMOS™ C2 Polarisation: unipolar Drain-source voltage: 600V Drain current: 9A Power dissipation: 63W Case: TO263 Gate-source voltage: ±30V On-state resistance: 0.54Ω Mounting: SMD Kind of package: reel; tape Kind of channel: enhancement |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||||||||
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WMM11N65C2 | WAYON |
Category: SMD N channel transistors Description: Transistor: N-MOSFET; WMOS™ C2; unipolar; 650V; 9A; 63W; TO263 Type of transistor: N-MOSFET Technology: WMOS™ C2 Polarisation: unipolar Drain-source voltage: 650V Drain current: 9A Power dissipation: 63W Case: TO263 Gate-source voltage: ±30V On-state resistance: 0.54Ω Mounting: SMD Kind of package: reel; tape Kind of channel: enhancement |
на замовлення 518 шт: термін постачання 14-30 дні (днів) |
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WMM11N80M3 | WAYON |
Category: SMD N channel transistors Description: Transistor: N-MOSFET; WMOS™ M3; unipolar; 800V; 10.5A; 85W; TO263 Type of transistor: N-MOSFET Technology: WMOS™ M3 Polarisation: unipolar Drain-source voltage: 800V Drain current: 10.5A Power dissipation: 85W Case: TO263 Gate-source voltage: ±30V On-state resistance: 0.8Ω Mounting: SMD Kind of package: reel; tape Kind of channel: enhancement |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||||||||
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WMM120N04TS | WAYON |
Category: SMD N channel transistors Description: Transistor: N-MOSFET; unipolar; 40V; 170A; Idm: 680A; 192W; TO263 Type of transistor: N-MOSFET Polarisation: unipolar Drain-source voltage: 40V Drain current: 170A Power dissipation: 192W Case: TO263 Gate-source voltage: ±20V On-state resistance: 3.8mΩ Mounting: SMD Gate charge: 95nC Kind of channel: enhancement Pulsed drain current: 680A Kind of package: reel; tape |
на замовлення 55 шт: термін постачання 14-30 дні (днів) |
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WMM120P06TS | WAYON |
Category: SMD P channel transistors Description: Transistor: P-MOSFET; unipolar; -60V; -120A; Idm: -480A; 183.8W Mounting: SMD Type of transistor: P-MOSFET Gate-source voltage: ±20V Kind of package: reel; tape Case: TO263 On-state resistance: 6.8mΩ Pulsed drain current: -480A Power dissipation: 183.8W Gate charge: 84nC Polarisation: unipolar Drain current: -120A Kind of channel: enhancement Drain-source voltage: -60V |
на замовлення 268 шт: термін постачання 14-30 дні (днів) |
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WMM12N80M3 | WAYON |
Category: SMD N channel transistorsDescription: Transistor: N-MOSFET; WMOS™ M3; unipolar; 800V; 12A; 86W; TO263 Mounting: SMD Power dissipation: 86W Polarisation: unipolar Technology: WMOS™ M3 Drain current: 12A Kind of channel: enhancement Drain-source voltage: 800V Type of transistor: N-MOSFET Gate-source voltage: ±30V Kind of package: reel; tape Case: TO263 On-state resistance: 620mΩ |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||||||||
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WMM130N20JN | WAYON |
Category: SMD N channel transistorsDescription: Transistor: N-MOSFET; unipolar; 200V; 117A; Idm: 620A; 416W; TO263 Drain-source voltage: 200V Drain current: 117A Case: TO263 Polarisation: unipolar On-state resistance: 5.2mΩ Pulsed drain current: 620A Power dissipation: 416W Kind of channel: enhancement Gate charge: 188nC Reverse recovery time: 196ns Gate-source voltage: ±20V Type of transistor: N-MOSFET Kind of package: reel; tape Mounting: SMD |
товару немає в наявності |
Мінімальне замовлення: 800 шт В кошику од. на суму грн. | ||||||||||||||
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WMM13N80M3 | WAYON |
Category: SMD N channel transistorsDescription: Transistor: N-MOSFET; WMOS™ M3; unipolar; 800V; 13A; 130W; TO263 Type of transistor: N-MOSFET Technology: WMOS™ M3 Polarisation: unipolar Drain-source voltage: 800V Drain current: 13A Power dissipation: 130W Case: TO263 Gate-source voltage: ±30V On-state resistance: 0.48Ω Mounting: SMD Kind of package: reel; tape Kind of channel: enhancement |
на замовлення 58 шт: термін постачання 14-30 дні (днів) |
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WMM14N65C4 | WAYON |
Category: SMD N channel transistorsDescription: Transistor: N-MOSFET; WMOS™ C4; unipolar; 650V; 6A; Idm: 26A; 85W Type of transistor: N-MOSFET Technology: WMOS™ C4 Polarisation: unipolar Drain-source voltage: 650V Drain current: 6A Power dissipation: 85W Case: TO263 Gate-source voltage: ±30V On-state resistance: 0.38Ω Mounting: SMD Kind of package: reel; tape Kind of channel: enhancement Pulsed drain current: 26A Gate charge: 13nC |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||||||||
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WMM15N60C4 | WAYON |
Category: SMD N channel transistors Description: Transistor: N-MOSFET; WMOS™ C4; unipolar; 600V; 7.8A; Idm: 26A; 86W Mounting: SMD Kind of channel: enhancement Drain-source voltage: 600V Type of transistor: N-MOSFET Gate-source voltage: ±30V Kind of package: reel; tape Case: TO263 On-state resistance: 0.3Ω Pulsed drain current: 26A Power dissipation: 86W Gate charge: 14.6nC Polarisation: unipolar Technology: WMOS™ C4 Drain current: 7.8A |
на замовлення 269 шт: термін постачання 14-30 дні (днів) |
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WMM15N65C4 | WAYON |
Category: SMD N channel transistors Description: Transistor: N-MOSFET; WMOS™ C4; unipolar; 650V; 7.8A; Idm: 26A; 86W Type of transistor: N-MOSFET Power dissipation: 86W Case: TO263 Mounting: SMD Gate charge: 14.6nC Kind of package: reel; tape Pulsed drain current: 26A Polarisation: unipolar Technology: WMOS™ C4 Drain current: 7.8A Kind of channel: enhancement Drain-source voltage: 650V Gate-source voltage: ±30V On-state resistance: 0.3Ω |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||||||||
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WMM15N80M3 | WAYON |
Category: SMD N channel transistorsDescription: Transistor: N-MOSFET; WMOS™ M3; unipolar; 800V; 15A; 150W; TO263 Type of transistor: N-MOSFET Technology: WMOS™ M3 Polarisation: unipolar Drain-source voltage: 800V Drain current: 15A Power dissipation: 150W Case: TO263 Gate-source voltage: ±30V On-state resistance: 0.36Ω Mounting: SMD Kind of package: reel; tape Kind of channel: enhancement |
товару немає в наявності |
Мінімальне замовлення: 800 шт В кошику од. на суму грн. | ||||||||||||||
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WMM161N15T2 | WAYON |
Category: SMD N channel transistors Description: Transistor: N-MOSFET; unipolar; 150V; 161A; Idm: 540A; 365W; TO263 On-state resistance: 6mΩ Mounting: SMD Case: TO263 Pulsed drain current: 540A Power dissipation: 365W Gate charge: 78nC Polarisation: unipolar Drain current: 161A Kind of channel: enhancement Drain-source voltage: 150V Type of transistor: N-MOSFET Gate-source voltage: ±20V Kind of package: reel; tape |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||||||||
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WMM16N60FD | WAYON |
Category: SMD N channel transistorsDescription: Transistor: N-MOSFET; WMOS™ FD; unipolar; 600V; 13A; 86W; TO263 Type of transistor: N-MOSFET Power dissipation: 86W Case: TO263 Mounting: SMD Kind of package: reel; tape Drain current: 13A Kind of channel: enhancement Drain-source voltage: 600V Gate-source voltage: ±30V On-state resistance: 0.32Ω Polarisation: unipolar Technology: WMOS™ FD |
на замовлення 298 шт: термін постачання 14-30 дні (днів) |
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WMM17N25JN | WAYON |
Category: SMD N channel transistorsDescription: Transistor: N-MOSFET; unipolar; 250V; 6.5A; Idm: 33A; 36W; TO263 Type of transistor: N-MOSFET Polarisation: unipolar Drain-source voltage: 250V Drain current: 6.5A Pulsed drain current: 33A Power dissipation: 36W Case: TO263 Gate-source voltage: ±20V On-state resistance: 0.17Ω Mounting: SMD Gate charge: 7.1nC Kind of package: reel; tape Kind of channel: enhancement Reverse recovery time: 98ns |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||||||||
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WMM180N03TS | WAYON |
Category: SMD N channel transistors Description: Transistor: N-MOSFET; unipolar; 30V; 180A; Idm: 720A; 181W; TO263 Type of transistor: N-MOSFET Polarisation: unipolar Drain-source voltage: 30V Drain current: 180A Power dissipation: 181W Case: TO263 Gate-source voltage: ±20V On-state resistance: 3.5mΩ Mounting: SMD Kind of channel: enhancement Pulsed drain current: 720A Gate charge: 32nC Kind of package: reel; tape |
на замовлення 69 шт: термін постачання 14-30 дні (днів) |
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WMM18N20JN | WAYON |
Category: SMD N channel transistorsDescription: Transistor: N-MOSFET; unipolar; 200V; 7A; Idm: 39A; 36W; TO263; 80ns Type of transistor: N-MOSFET Polarisation: unipolar Drain-source voltage: 200V Drain current: 7A Power dissipation: 36W Case: TO263 Gate-source voltage: ±20V On-state resistance: 135mΩ Mounting: SMD Gate charge: 7.2nC Kind of package: reel; tape Kind of channel: enhancement Reverse recovery time: 80ns Pulsed drain current: 39A |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||||||||
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WMM190N03TS | WAYON |
Category: SMD N channel transistors Description: Transistor: N-MOSFET; unipolar; 30V; 190A; Idm: 760A; 192W; TO263 Type of transistor: N-MOSFET Polarisation: unipolar Drain-source voltage: 30V Drain current: 190A Pulsed drain current: 760A Power dissipation: 192W Case: TO263 Gate-source voltage: ±20V On-state resistance: 2.6mΩ Mounting: SMD Gate charge: 0.1µC Kind of package: reel; tape Kind of channel: enhancement |
на замовлення 74 шт: термін постачання 14-30 дні (днів) |
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WMM20N20JN | WAYON |
Category: SMD N channel transistorsDescription: Transistor: N-MOSFET; unipolar; 200V; 12A; Idm: 60A; 59W; TO263 Type of transistor: N-MOSFET Polarisation: unipolar Drain-source voltage: 200V Drain current: 12A Pulsed drain current: 60A Power dissipation: 59W Case: TO263 Gate-source voltage: ±20V On-state resistance: 80mΩ Mounting: SMD Kind of package: reel; tape Kind of channel: enhancement Gate charge: 4.1nC Reverse recovery time: 110ns |
на замовлення 587 шт: термін постачання 14-30 дні (днів) |
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WMM20N60C2 | WAYON |
Category: SMD N channel transistors Description: Transistor: N-MOSFET; WMOS™ C2; unipolar; 600V; 15A; 86W; TO263 Type of transistor: N-MOSFET Technology: WMOS™ C2 Polarisation: unipolar Drain-source voltage: 600V Drain current: 15A Power dissipation: 86W Case: TO263 Gate-source voltage: ±30V On-state resistance: 0.3Ω Mounting: SMD Kind of package: reel; tape Kind of channel: enhancement |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||||||||
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WMM240P10HG4 | WAYON |
Category: SMD P channel transistors Description: Transistor: P-MOSFET; unipolar; -100V; -38A; Idm: -240A; 192.3W Type of transistor: P-MOSFET Polarisation: unipolar Drain-source voltage: -100V Drain current: -38A Pulsed drain current: -240A Power dissipation: 192.3W Case: TO263 Gate-source voltage: ±20V On-state resistance: 26mΩ Mounting: SMD Gate charge: 64.6nC Kind of package: reel; tape Kind of channel: enhancement |
на замовлення 2 шт: термін постачання 14-30 дні (днів) |
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WMM25N80M3 | WAYON |
Category: SMD N channel transistorsDescription: Transistor: N-MOSFET; WMOS™ M3; unipolar; 800V; 21A; 250W; TO263 Type of transistor: N-MOSFET Technology: WMOS™ M3 Polarisation: unipolar Drain-source voltage: 800V Drain current: 21A Power dissipation: 250W Case: TO263 Gate-source voltage: ±30V On-state resistance: 0.26Ω Mounting: SMD Kind of package: reel; tape Kind of channel: enhancement |
на замовлення 352 шт: термін постачання 14-30 дні (днів) |
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WMM26N60C4 | WAYON |
Category: SMD N channel transistors Description: Transistor: N-MOSFET; WMOS™ C4; unipolar; 600V; 10.5A; Idm: 40A Type of transistor: N-MOSFET Technology: WMOS™ C4 Polarisation: unipolar Drain-source voltage: 600V Drain current: 10.5A Power dissipation: 135W Case: TO263 Gate-source voltage: ±30V On-state resistance: 0.19Ω Mounting: SMD Gate charge: 22.1nC Kind of package: reel; tape Kind of channel: enhancement Pulsed drain current: 40A |
на замовлення 780 шт: термін постачання 14-30 дні (днів) |
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WMM26N60F2 | WAYON |
Category: SMD N channel transistors Description: Transistor: N-MOSFET; WMOS™ F2; unipolar; 600V; 10.5A; Idm: 40A Type of transistor: N-MOSFET Technology: WMOS™ F2 Polarisation: unipolar Drain-source voltage: 600V Drain current: 10.5A Power dissipation: 135W Case: TO263 Gate-source voltage: ±30V On-state resistance: 0.21Ω Mounting: SMD Gate charge: 22.1nC Kind of package: reel; tape Kind of channel: enhancement Pulsed drain current: 40A |
на замовлення 796 шт: термін постачання 14-30 дні (днів) |
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WMM26N60FD | WAYON |
Category: SMD N channel transistorsDescription: Transistor: N-MOSFET; WMOS™ FD; unipolar; 600V; 20A; 147W; TO263 Type of transistor: N-MOSFET Technology: WMOS™ FD Polarisation: unipolar Drain-source voltage: 600V Drain current: 20A Power dissipation: 147W Case: TO263 Gate-source voltage: ±30V On-state resistance: 0.2Ω Mounting: SMD Kind of package: reel; tape Kind of channel: enhancement |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||||||||
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WMM26N65FD | WAYON |
Category: SMD N channel transistorsDescription: Transistor: N-MOSFET; WMOS™ FD; unipolar; 650V; 20A; 147W; TO263 Type of transistor: N-MOSFET Technology: WMOS™ FD Polarisation: unipolar Drain-source voltage: 650V Drain current: 20A Power dissipation: 147W Case: TO263 Gate-source voltage: ±30V On-state resistance: 0.2Ω Mounting: SMD Kind of package: reel; tape Kind of channel: enhancement |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||||||||
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WMM28N60C4 | WAYON |
Category: SMD N channel transistorsDescription: Transistor: N-MOSFET; WMOS™ C4; unipolar; 600V; 13A; Idm: 65A; 160W Type of transistor: N-MOSFET Technology: WMOS™ C4 Power dissipation: 160W Case: TO263 Mounting: SMD Gate charge: 27.3nC Kind of package: reel; tape Pulsed drain current: 65A Polarisation: unipolar Drain current: 13A Kind of channel: enhancement Drain-source voltage: 600V Gate-source voltage: ±30V On-state resistance: 0.16Ω |
на замовлення 498 шт: термін постачання 14-30 дні (днів) |
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WMM340N20HG2 | WAYON |
Category: SMD N channel transistors Description: Transistor: N-MOSFET; unipolar; 200V; 50A; Idm: 148A; 173.6W; TO263 Type of transistor: N-MOSFET Polarisation: unipolar Drain-source voltage: 200V Drain current: 50A Pulsed drain current: 148A Power dissipation: 173.6W Case: TO263 Gate-source voltage: ±20V On-state resistance: 34mΩ Mounting: SMD Gate charge: 23nC Kind of package: reel; tape Kind of channel: enhancement |
на замовлення 100 шт: термін постачання 14-30 дні (днів) |
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WMM36N60C4 | WAYON |
Category: SMD N channel transistorsDescription: Transistor: N-MOSFET; WMOS™ C4; unipolar; 600V; 20A; Idm: 100A; 277W Type of transistor: N-MOSFET Technology: WMOS™ C4 Power dissipation: 277W Case: TO263 Mounting: SMD Gate charge: 46nC Kind of package: reel; tape Drain current: 20A Kind of channel: enhancement Drain-source voltage: 600V Gate-source voltage: ±30V On-state resistance: 97mΩ Pulsed drain current: 100A Polarisation: unipolar |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||||||||
| WMM36N60F2 | WAYON |
Category: SMD N channel transistors Description: Transistor: N-MOSFET; WMOS™ F2; unipolar; 600V; 20A; Idm: 100A; 277W Type of transistor: N-MOSFET Technology: WMOS™ F2 Polarisation: unipolar Drain-source voltage: 600V Drain current: 20A Power dissipation: 277W Case: TO263 Gate-source voltage: ±30V On-state resistance: 0.11Ω Mounting: SMD Kind of package: reel; tape Kind of channel: enhancement Pulsed drain current: 100A Gate charge: 46nC |
товару немає в наявності |
В кошику од. на суму грн. | |||||||||||||||
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WMM36N65C4 | WAYON |
Category: SMD N channel transistors Description: Transistor: N-MOSFET; WMOS™ C4; unipolar; 650V; 20A; Idm: 100A; 277W Type of transistor: N-MOSFET Technology: WMOS™ C4 Polarisation: unipolar Drain-source voltage: 650V Drain current: 20A Pulsed drain current: 100A Power dissipation: 277W Case: TO263 Gate-source voltage: ±30V On-state resistance: 97mΩ Mounting: SMD Gate charge: 46nC Kind of package: reel; tape Kind of channel: enhancement |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||||||||
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WMM36N65F2 | WAYON |
Category: SMD N channel transistors Description: Transistor: N-MOSFET; WMOS™ F2; unipolar; 650V; 20A; Idm: 100A; 277W Type of transistor: N-MOSFET Technology: WMOS™ F2 Polarisation: unipolar Drain-source voltage: 650V Drain current: 20A Pulsed drain current: 100A Power dissipation: 277W Case: TO263 Gate-source voltage: ±30V On-state resistance: 0.11Ω Mounting: SMD Gate charge: 46nC Kind of package: reel; tape Kind of channel: enhancement |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||||||||
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WMM38N60C2 | WAYON |
Category: SMD N channel transistorsDescription: Transistor: N-MOSFET; WMOS™ C2; unipolar; 600V; 38A; 277W; TO263 Type of transistor: N-MOSFET Technology: WMOS™ C2 Power dissipation: 277W Case: TO263 Mounting: SMD Kind of package: reel; tape Polarisation: unipolar Drain current: 38A Kind of channel: enhancement Drain-source voltage: 600V Gate-source voltage: ±30V On-state resistance: 99mΩ |
на замовлення 6 шт: термін постачання 14-30 дні (днів) |
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WMM38N60FD | WAYON |
Category: SMD N channel transistors Description: Transistor: N-MOSFET; WMOS™ FD; unipolar; 600V; 38A; 277W; TO263 Type of transistor: N-MOSFET Technology: WMOS™ FD Polarisation: unipolar Drain-source voltage: 600V Drain current: 38A Power dissipation: 277W Case: TO263 Gate-source voltage: ±30V On-state resistance: 0.115Ω Mounting: SMD Kind of package: reel; tape Kind of channel: enhancement |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||||||||
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WMM38N65FD | WAYON |
Category: SMD N channel transistors Description: Transistor: N-MOSFET; WMOS™ FD; unipolar; 650V; 38A; 277W; TO263 Type of transistor: N-MOSFET Technology: WMOS™ FD Polarisation: unipolar Drain-source voltage: 650V Drain current: 38A Power dissipation: 277W Case: TO263 Gate-source voltage: ±30V On-state resistance: 0.115Ω Mounting: SMD Kind of package: reel; tape Kind of channel: enhancement |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||||||||
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WMM40N20JN | WAYON |
Category: SMD N channel transistorsDescription: Transistor: N-MOSFET; unipolar; 200V; 21A; Idm: 110A; 89W; TO263 Type of transistor: N-MOSFET Polarisation: unipolar Drain-source voltage: 200V Drain current: 21A Pulsed drain current: 110A Power dissipation: 89W Case: TO263 Gate-source voltage: ±20V On-state resistance: 46mΩ Mounting: SMD Gate charge: 7.7nC Kind of package: reel; tape Kind of channel: enhancement Reverse recovery time: 141ns |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||||||||
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WMM4N90D1 | WAYON |
Category: SMD N channel transistors Description: Transistor: N-MOSFET; WMOS™ D1; unipolar; 900V; 4A; Idm: 16A; 65W Type of transistor: N-MOSFET Polarisation: unipolar Drain-source voltage: 900V Drain current: 4A Case: TO263 Gate-source voltage: ±30V On-state resistance: 2.9Ω Mounting: SMD Gate charge: 26nC Kind of channel: enhancement Technology: WMOS™ D1 Kind of package: reel; tape Pulsed drain current: 16A Power dissipation: 65W |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||||||||
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WMM4N90D1B | WAYON |
Category: SMD N channel transistors Description: Transistor: N-MOSFET; WMOS™ D1; unipolar; 900V; 4A; Idm: 16A; 63W Type of transistor: N-MOSFET Polarisation: unipolar Drain-source voltage: 900V Drain current: 4A Case: TO263 Gate-source voltage: ±30V On-state resistance: 1.85Ω Mounting: SMD Gate charge: 34nC Kind of channel: enhancement Technology: WMOS™ D1 Kind of package: reel; tape Pulsed drain current: 16A Power dissipation: 63W |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||||||||
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WMM50N20JN | WAYON |
Category: SMD N channel transistorsDescription: Transistor: N-MOSFET; unipolar; 200V; 24A; Idm: 120A; 90W; TO263 Type of transistor: N-MOSFET Polarisation: unipolar Drain-source voltage: 200V Drain current: 24A Pulsed drain current: 120A Power dissipation: 90W Case: TO263 Gate-source voltage: ±20V On-state resistance: 35mΩ Mounting: SMD Gate charge: 10nC Kind of package: reel; tape Kind of channel: enhancement Reverse recovery time: 138ns |
товару немає в наявності |
В кошику од. на суму грн. |
| WMM020N10HGS |
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Виробник: WAYON
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 100V; 280A; Idm: 1120A; 390.6W
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 100V
Drain current: 280A
Pulsed drain current: 1120A
Power dissipation: 390.6W
Case: TO263
Gate-source voltage: ±20V
On-state resistance: 2.2mΩ
Mounting: SMD
Gate charge: 255nC
Kind of package: reel; tape
Kind of channel: enhancement
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 100V; 280A; Idm: 1120A; 390.6W
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 100V
Drain current: 280A
Pulsed drain current: 1120A
Power dissipation: 390.6W
Case: TO263
Gate-source voltage: ±20V
On-state resistance: 2.2mΩ
Mounting: SMD
Gate charge: 255nC
Kind of package: reel; tape
Kind of channel: enhancement
на замовлення 66 шт:
термін постачання 14-30 дні (днів)
| Кількість | Ціна без ПДВ |
|---|---|
| 3+ | 187.73 грн |
| 5+ | 166.63 грн |
| 25+ | 145.26 грн |
| WMM028N10HG2 |
Виробник: WAYON
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 100V; 245A; Idm: 780A; 278W; TO263
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 100V
Drain current: 245A
Pulsed drain current: 780A
Power dissipation: 278W
Case: TO263
Gate-source voltage: ±20V
On-state resistance: 2.8mΩ
Mounting: SMD
Gate charge: 98nC
Kind of package: reel; tape
Kind of channel: enhancement
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 100V; 245A; Idm: 780A; 278W; TO263
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 100V
Drain current: 245A
Pulsed drain current: 780A
Power dissipation: 278W
Case: TO263
Gate-source voltage: ±20V
On-state resistance: 2.8mΩ
Mounting: SMD
Gate charge: 98nC
Kind of package: reel; tape
Kind of channel: enhancement
товару немає в наявності
В кошику
од. на суму грн.
| WMM028N10HGS |
Виробник: WAYON
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 100V; 257A; Idm: 1028A; 379W; TO263
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 100V
Drain current: 257A
Pulsed drain current: 1028A
Power dissipation: 379W
Case: TO263
Gate-source voltage: ±20V
On-state resistance: 2.8mΩ
Mounting: SMD
Gate charge: 134nC
Kind of package: reel; tape
Kind of channel: enhancement
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 100V; 257A; Idm: 1028A; 379W; TO263
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 100V
Drain current: 257A
Pulsed drain current: 1028A
Power dissipation: 379W
Case: TO263
Gate-source voltage: ±20V
On-state resistance: 2.8mΩ
Mounting: SMD
Gate charge: 134nC
Kind of package: reel; tape
Kind of channel: enhancement
товару немає в наявності
Мінімальне замовлення: 800 шт
В кошику
од. на суму грн.
| WMM030N06HG4 |
Виробник: WAYON
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 60V; 184A; Idm: 736A; 208.3W; TO263
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 60V
Drain current: 184A
Pulsed drain current: 736A
Power dissipation: 208.3W
Case: TO263
Gate-source voltage: ±20V
On-state resistance: 3mΩ
Mounting: SMD
Gate charge: 68nC
Kind of package: reel; tape
Kind of channel: enhancement
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 60V; 184A; Idm: 736A; 208.3W; TO263
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 60V
Drain current: 184A
Pulsed drain current: 736A
Power dissipation: 208.3W
Case: TO263
Gate-source voltage: ±20V
On-state resistance: 3mΩ
Mounting: SMD
Gate charge: 68nC
Kind of package: reel; tape
Kind of channel: enhancement
на замовлення 19 шт:
термін постачання 14-30 дні (днів)
| Кількість | Ціна без ПДВ |
|---|---|
| 7+ | 65.80 грн |
| 19+ | 53.83 грн |
| WMM040N08HGS |
Виробник: WAYON
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 80V; 180A; Idm: 720A; 227.3W; TO263
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 80V
Drain current: 180A
Power dissipation: 227.3W
Case: TO263
Gate-source voltage: ±20V
On-state resistance: 4.8mΩ
Mounting: SMD
Kind of channel: enhancement
Kind of package: reel; tape
Pulsed drain current: 720A
Gate charge: 78.5nC
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 80V; 180A; Idm: 720A; 227.3W; TO263
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 80V
Drain current: 180A
Power dissipation: 227.3W
Case: TO263
Gate-source voltage: ±20V
On-state resistance: 4.8mΩ
Mounting: SMD
Kind of channel: enhancement
Kind of package: reel; tape
Pulsed drain current: 720A
Gate charge: 78.5nC
на замовлення 96 шт:
термін постачання 14-30 дні (днів)
| Кількість | Ціна без ПДВ |
|---|---|
| 7+ | 66.65 грн |
| 25+ | 58.96 грн |
| WMM040N15HG2 |
Виробник: WAYON
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 150V; 126A; Idm: 800A; 378.7W; TO263
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 150V
Drain current: 126A
Pulsed drain current: 800A
Power dissipation: 378.7W
Case: TO263
Gate-source voltage: ±20V
On-state resistance: 4.6mΩ
Mounting: SMD
Gate charge: 74.3nC
Kind of package: reel; tape
Kind of channel: enhancement
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 150V; 126A; Idm: 800A; 378.7W; TO263
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 150V
Drain current: 126A
Pulsed drain current: 800A
Power dissipation: 378.7W
Case: TO263
Gate-source voltage: ±20V
On-state resistance: 4.6mΩ
Mounting: SMD
Gate charge: 74.3nC
Kind of package: reel; tape
Kind of channel: enhancement
на замовлення 34 шт:
термін постачання 14-30 дні (днів)
| Кількість | Ціна без ПДВ |
|---|---|
| 2+ | 313.80 грн |
| 5+ | 274.29 грн |
| 25+ | 243.53 грн |
| WMM043N10HGS |
Виробник: WAYON
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 100V; 145A; Idm: 580A; 208W; TO263
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 100V
Drain current: 145A
Pulsed drain current: 580A
Power dissipation: 208W
Case: TO263
Gate-source voltage: ±20V
On-state resistance: 4.5mΩ
Mounting: SMD
Gate charge: 98.4nC
Kind of package: reel; tape
Kind of channel: enhancement
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 100V; 145A; Idm: 580A; 208W; TO263
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 100V
Drain current: 145A
Pulsed drain current: 580A
Power dissipation: 208W
Case: TO263
Gate-source voltage: ±20V
On-state resistance: 4.5mΩ
Mounting: SMD
Gate charge: 98.4nC
Kind of package: reel; tape
Kind of channel: enhancement
товару немає в наявності
В кошику
од. на суму грн.
| WMM048NV6HG4 |
Виробник: WAYON
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 65V; 110A; Idm: 440A; 104.2W; TO263
Case: TO263
Kind of package: reel; tape
Kind of channel: enhancement
Type of transistor: N-MOSFET
Mounting: SMD
Polarisation: unipolar
Gate charge: 28.5nC
On-state resistance: 5.2mΩ
Gate-source voltage: ±20V
Drain current: 110A
Drain-source voltage: 65V
Power dissipation: 104.2W
Pulsed drain current: 440A
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 65V; 110A; Idm: 440A; 104.2W; TO263
Case: TO263
Kind of package: reel; tape
Kind of channel: enhancement
Type of transistor: N-MOSFET
Mounting: SMD
Polarisation: unipolar
Gate charge: 28.5nC
On-state resistance: 5.2mΩ
Gate-source voltage: ±20V
Drain current: 110A
Drain-source voltage: 65V
Power dissipation: 104.2W
Pulsed drain current: 440A
на замовлення 70 шт:
термін постачання 14-30 дні (днів)
| Кількість | Ціна без ПДВ |
|---|---|
| 7+ | 69.94 грн |
| 8+ | 53.83 грн |
| 25+ | 44.95 грн |
| WMM053N10HGS |
Виробник: WAYON
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 100V; 120A; Idm: 480A; 164.5W; TO263
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 100V
Drain current: 120A
Pulsed drain current: 480A
Power dissipation: 164.5W
Case: TO263
Gate-source voltage: ±20V
On-state resistance: 5.5mΩ
Mounting: SMD
Gate charge: 82.5nC
Kind of package: reel; tape
Kind of channel: enhancement
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 100V; 120A; Idm: 480A; 164.5W; TO263
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 100V
Drain current: 120A
Pulsed drain current: 480A
Power dissipation: 164.5W
Case: TO263
Gate-source voltage: ±20V
On-state resistance: 5.5mΩ
Mounting: SMD
Gate charge: 82.5nC
Kind of package: reel; tape
Kind of channel: enhancement
на замовлення 28 шт:
термін постачання 14-30 дні (днів)
| Кількість | Ціна без ПДВ |
|---|---|
| 7+ | 70.86 грн |
| 8+ | 54.52 грн |
| 25+ | 45.54 грн |
| WMM053NV8HGS |
Виробник: WAYON
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 85V; 125A; Idm: 500A; 162W; TO263
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 85V
Drain current: 125A
Pulsed drain current: 500A
Power dissipation: 162W
Case: TO263
Gate-source voltage: ±20V
On-state resistance: 5.5mΩ
Mounting: SMD
Gate charge: 76.2nC
Kind of package: reel; tape
Kind of channel: enhancement
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 85V; 125A; Idm: 500A; 162W; TO263
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 85V
Drain current: 125A
Pulsed drain current: 500A
Power dissipation: 162W
Case: TO263
Gate-source voltage: ±20V
On-state resistance: 5.5mΩ
Mounting: SMD
Gate charge: 76.2nC
Kind of package: reel; tape
Kind of channel: enhancement
на замовлення 183 шт:
термін постачання 14-30 дні (днів)
| Кількість | Ціна без ПДВ |
|---|---|
| 7+ | 74.54 грн |
| 8+ | 53.49 грн |
| 24+ | 40.67 грн |
| 66+ | 38.45 грн |
| WMM06N80M3 |
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Виробник: WAYON
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; WMOS™ M3; unipolar; 800V; 5A; 50W; TO263
Type of transistor: N-MOSFET
Technology: WMOS™ M3
Polarisation: unipolar
Drain-source voltage: 800V
Drain current: 5A
Power dissipation: 50W
Case: TO263
Gate-source voltage: ±30V
On-state resistance: 2Ω
Mounting: SMD
Kind of package: reel; tape
Kind of channel: enhancement
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; WMOS™ M3; unipolar; 800V; 5A; 50W; TO263
Type of transistor: N-MOSFET
Technology: WMOS™ M3
Polarisation: unipolar
Drain-source voltage: 800V
Drain current: 5A
Power dissipation: 50W
Case: TO263
Gate-source voltage: ±30V
On-state resistance: 2Ω
Mounting: SMD
Kind of package: reel; tape
Kind of channel: enhancement
товару немає в наявності
В кошику
од. на суму грн.
| WMM07N60C2 |
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Виробник: WAYON
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; WMOS™ C2; unipolar; 600V; 5A; 42W; TO263
Type of transistor: N-MOSFET
Technology: WMOS™ C2
Polarisation: unipolar
Drain-source voltage: 600V
Drain current: 5A
Power dissipation: 42W
Case: TO263
Gate-source voltage: ±30V
On-state resistance: 1.14Ω
Mounting: SMD
Kind of package: reel; tape
Kind of channel: enhancement
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; WMOS™ C2; unipolar; 600V; 5A; 42W; TO263
Type of transistor: N-MOSFET
Technology: WMOS™ C2
Polarisation: unipolar
Drain-source voltage: 600V
Drain current: 5A
Power dissipation: 42W
Case: TO263
Gate-source voltage: ±30V
On-state resistance: 1.14Ω
Mounting: SMD
Kind of package: reel; tape
Kind of channel: enhancement
товару немає в наявності
В кошику
од. на суму грн.
| WMM07N65C2 |
![]() |
Виробник: WAYON
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; WMOS™ C2; unipolar; 650V; 5A; 42W; TO263
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 650V
Drain current: 5A
Case: TO263
Gate-source voltage: ±30V
On-state resistance: 1.14Ω
Mounting: SMD
Kind of channel: enhancement
Power dissipation: 42W
Technology: WMOS™ C2
Kind of package: reel; tape
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; WMOS™ C2; unipolar; 650V; 5A; 42W; TO263
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 650V
Drain current: 5A
Case: TO263
Gate-source voltage: ±30V
On-state resistance: 1.14Ω
Mounting: SMD
Kind of channel: enhancement
Power dissipation: 42W
Technology: WMOS™ C2
Kind of package: reel; tape
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| WMM07N80M3 |
![]() |
Виробник: WAYON
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; WMOS™ M3; unipolar; 800V; 6.8A; 55W; TO263
Type of transistor: N-MOSFET
Technology: WMOS™ M3
Polarisation: unipolar
Drain-source voltage: 800V
Drain current: 6.8A
Power dissipation: 55W
Case: TO263
Gate-source voltage: ±30V
On-state resistance: 1.8Ω
Mounting: SMD
Kind of package: reel; tape
Kind of channel: enhancement
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; WMOS™ M3; unipolar; 800V; 6.8A; 55W; TO263
Type of transistor: N-MOSFET
Technology: WMOS™ M3
Polarisation: unipolar
Drain-source voltage: 800V
Drain current: 6.8A
Power dissipation: 55W
Case: TO263
Gate-source voltage: ±30V
On-state resistance: 1.8Ω
Mounting: SMD
Kind of package: reel; tape
Kind of channel: enhancement
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В кошику
од. на суму грн.
| WMM08N80M3 |
![]() |
Виробник: WAYON
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; WMOS™ M3; unipolar; 800V; 7A; 70W; TO263
Type of transistor: N-MOSFET
Technology: WMOS™ M3
Polarisation: unipolar
Drain-source voltage: 800V
Drain current: 7A
Power dissipation: 70W
Case: TO263
Gate-source voltage: ±30V
On-state resistance: 1.38Ω
Mounting: SMD
Kind of package: reel; tape
Kind of channel: enhancement
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; WMOS™ M3; unipolar; 800V; 7A; 70W; TO263
Type of transistor: N-MOSFET
Technology: WMOS™ M3
Polarisation: unipolar
Drain-source voltage: 800V
Drain current: 7A
Power dissipation: 70W
Case: TO263
Gate-source voltage: ±30V
On-state resistance: 1.38Ω
Mounting: SMD
Kind of package: reel; tape
Kind of channel: enhancement
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В кошику
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| WMM09N60C2 |
![]() |
Виробник: WAYON
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; WMOS™ C2; unipolar; 600V; 6A; 45W; TO263
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 600V
Drain current: 6A
Power dissipation: 45W
Case: TO263
Gate-source voltage: ±30V
On-state resistance: 940mΩ
Mounting: SMD
Kind of package: reel; tape
Kind of channel: enhancement
Technology: WMOS™ C2
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; WMOS™ C2; unipolar; 600V; 6A; 45W; TO263
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 600V
Drain current: 6A
Power dissipation: 45W
Case: TO263
Gate-source voltage: ±30V
On-state resistance: 940mΩ
Mounting: SMD
Kind of package: reel; tape
Kind of channel: enhancement
Technology: WMOS™ C2
на замовлення 560 шт:
термін постачання 14-30 дні (днів)
| Кількість | Ціна без ПДВ |
|---|---|
| 9+ | 52.45 грн |
| 16+ | 27.34 грн |
| 25+ | 24.27 грн |
| 61+ | 16.06 грн |
| 168+ | 15.21 грн |
| WMM09N65C2 |
![]() |
Виробник: WAYON
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; WMOS™ C2; unipolar; 650V; 6A; 45W; TO263
Type of transistor: N-MOSFET
Technology: WMOS™ C2
Polarisation: unipolar
Drain-source voltage: 650V
Drain current: 6A
Power dissipation: 45W
Case: TO263
Gate-source voltage: ±30V
On-state resistance: 940mΩ
Mounting: SMD
Kind of package: reel; tape
Kind of channel: enhancement
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; WMOS™ C2; unipolar; 650V; 6A; 45W; TO263
Type of transistor: N-MOSFET
Technology: WMOS™ C2
Polarisation: unipolar
Drain-source voltage: 650V
Drain current: 6A
Power dissipation: 45W
Case: TO263
Gate-source voltage: ±30V
On-state resistance: 940mΩ
Mounting: SMD
Kind of package: reel; tape
Kind of channel: enhancement
на замовлення 612 шт:
термін постачання 14-30 дні (днів)
| Кількість | Ціна без ПДВ |
|---|---|
| 9+ | 51.53 грн |
| 16+ | 28.20 грн |
| 25+ | 25.21 грн |
| 100+ | 22.82 грн |
| WMM10N60C2 |
![]() |
Виробник: WAYON
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; WMOS™ C2; unipolar; 600V; 8A; 57W; TO263
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 600V
Drain current: 8A
Power dissipation: 57W
Case: TO263
Gate-source voltage: ±30V
On-state resistance: 690mΩ
Mounting: SMD
Kind of channel: enhancement
Kind of package: reel; tape
Technology: WMOS™ C2
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; WMOS™ C2; unipolar; 600V; 8A; 57W; TO263
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 600V
Drain current: 8A
Power dissipation: 57W
Case: TO263
Gate-source voltage: ±30V
On-state resistance: 690mΩ
Mounting: SMD
Kind of channel: enhancement
Kind of package: reel; tape
Technology: WMOS™ C2
на замовлення 414 шт:
термін постачання 14-30 дні (днів)
| Кількість | Ціна без ПДВ |
|---|---|
| 9+ | 53.37 грн |
| 12+ | 36.06 грн |
| 25+ | 31.79 грн |
| 47+ | 20.85 грн |
| 129+ | 19.65 грн |
| WMM10N65C2 |
![]() |
Виробник: WAYON
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; WMOS™ C2; unipolar; 650V; 8A; 57W; TO263
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 650V
Drain current: 8A
Power dissipation: 57W
Case: TO263
Gate-source voltage: ±30V
On-state resistance: 690mΩ
Mounting: SMD
Kind of channel: enhancement
Kind of package: reel; tape
Technology: WMOS™ C2
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; WMOS™ C2; unipolar; 650V; 8A; 57W; TO263
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 650V
Drain current: 8A
Power dissipation: 57W
Case: TO263
Gate-source voltage: ±30V
On-state resistance: 690mΩ
Mounting: SMD
Kind of channel: enhancement
Kind of package: reel; tape
Technology: WMOS™ C2
на замовлення 563 шт:
термін постачання 14-30 дні (днів)
| Кількість | Ціна без ПДВ |
|---|---|
| 9+ | 53.37 грн |
| 12+ | 36.91 грн |
| 25+ | 32.56 грн |
| 46+ | 21.62 грн |
| 124+ | 20.42 грн |
| WMM10N70C2 |
![]() |
Виробник: WAYON
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; WMOS™ C2; unipolar; 700V; 7.5A; 57W; TO263
Power dissipation: 57W
Polarisation: unipolar
Technology: WMOS™ C2
Drain current: 7.5A
Kind of channel: enhancement
Drain-source voltage: 700V
Type of transistor: N-MOSFET
Gate-source voltage: ±30V
Kind of package: reel; tape
Case: TO263
On-state resistance: 920mΩ
Mounting: SMD
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; WMOS™ C2; unipolar; 700V; 7.5A; 57W; TO263
Power dissipation: 57W
Polarisation: unipolar
Technology: WMOS™ C2
Drain current: 7.5A
Kind of channel: enhancement
Drain-source voltage: 700V
Type of transistor: N-MOSFET
Gate-source voltage: ±30V
Kind of package: reel; tape
Case: TO263
On-state resistance: 920mΩ
Mounting: SMD
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В кошику
од. на суму грн.
| WMM10N80M3 |
![]() |
Виробник: WAYON
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; WMOS™ M3; unipolar; 800V; 10A; 85W; TO263
Power dissipation: 85W
Polarisation: unipolar
Technology: WMOS™ M3
Drain current: 10A
Kind of channel: enhancement
Drain-source voltage: 800V
Type of transistor: N-MOSFET
Gate-source voltage: ±30V
Kind of package: reel; tape
Case: TO263
On-state resistance: 1.03Ω
Mounting: SMD
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; WMOS™ M3; unipolar; 800V; 10A; 85W; TO263
Power dissipation: 85W
Polarisation: unipolar
Technology: WMOS™ M3
Drain current: 10A
Kind of channel: enhancement
Drain-source voltage: 800V
Type of transistor: N-MOSFET
Gate-source voltage: ±30V
Kind of package: reel; tape
Case: TO263
On-state resistance: 1.03Ω
Mounting: SMD
товару немає в наявності
Мінімальне замовлення: 800 шт
В кошику
од. на суму грн.
| WMM11N60C2 |
![]() |
Виробник: WAYON
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; WMOS™ C2; unipolar; 600V; 9A; 63W; TO263
Type of transistor: N-MOSFET
Technology: WMOS™ C2
Polarisation: unipolar
Drain-source voltage: 600V
Drain current: 9A
Power dissipation: 63W
Case: TO263
Gate-source voltage: ±30V
On-state resistance: 0.54Ω
Mounting: SMD
Kind of package: reel; tape
Kind of channel: enhancement
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; WMOS™ C2; unipolar; 600V; 9A; 63W; TO263
Type of transistor: N-MOSFET
Technology: WMOS™ C2
Polarisation: unipolar
Drain-source voltage: 600V
Drain current: 9A
Power dissipation: 63W
Case: TO263
Gate-source voltage: ±30V
On-state resistance: 0.54Ω
Mounting: SMD
Kind of package: reel; tape
Kind of channel: enhancement
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В кошику
од. на суму грн.
| WMM11N65C2 |
Виробник: WAYON
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; WMOS™ C2; unipolar; 650V; 9A; 63W; TO263
Type of transistor: N-MOSFET
Technology: WMOS™ C2
Polarisation: unipolar
Drain-source voltage: 650V
Drain current: 9A
Power dissipation: 63W
Case: TO263
Gate-source voltage: ±30V
On-state resistance: 0.54Ω
Mounting: SMD
Kind of package: reel; tape
Kind of channel: enhancement
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; WMOS™ C2; unipolar; 650V; 9A; 63W; TO263
Type of transistor: N-MOSFET
Technology: WMOS™ C2
Polarisation: unipolar
Drain-source voltage: 650V
Drain current: 9A
Power dissipation: 63W
Case: TO263
Gate-source voltage: ±30V
On-state resistance: 0.54Ω
Mounting: SMD
Kind of package: reel; tape
Kind of channel: enhancement
на замовлення 518 шт:
термін постачання 14-30 дні (днів)
| Кількість | Ціна без ПДВ |
|---|---|
| 9+ | 53.37 грн |
| 10+ | 44.09 грн |
| 25+ | 38.54 грн |
| 39+ | 25.55 грн |
| 105+ | 24.10 грн |
| WMM11N80M3 |
Виробник: WAYON
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; WMOS™ M3; unipolar; 800V; 10.5A; 85W; TO263
Type of transistor: N-MOSFET
Technology: WMOS™ M3
Polarisation: unipolar
Drain-source voltage: 800V
Drain current: 10.5A
Power dissipation: 85W
Case: TO263
Gate-source voltage: ±30V
On-state resistance: 0.8Ω
Mounting: SMD
Kind of package: reel; tape
Kind of channel: enhancement
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; WMOS™ M3; unipolar; 800V; 10.5A; 85W; TO263
Type of transistor: N-MOSFET
Technology: WMOS™ M3
Polarisation: unipolar
Drain-source voltage: 800V
Drain current: 10.5A
Power dissipation: 85W
Case: TO263
Gate-source voltage: ±30V
On-state resistance: 0.8Ω
Mounting: SMD
Kind of package: reel; tape
Kind of channel: enhancement
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| WMM120N04TS |
Виробник: WAYON
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 40V; 170A; Idm: 680A; 192W; TO263
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 40V
Drain current: 170A
Power dissipation: 192W
Case: TO263
Gate-source voltage: ±20V
On-state resistance: 3.8mΩ
Mounting: SMD
Gate charge: 95nC
Kind of channel: enhancement
Pulsed drain current: 680A
Kind of package: reel; tape
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 40V; 170A; Idm: 680A; 192W; TO263
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 40V
Drain current: 170A
Power dissipation: 192W
Case: TO263
Gate-source voltage: ±20V
On-state resistance: 3.8mΩ
Mounting: SMD
Gate charge: 95nC
Kind of channel: enhancement
Pulsed drain current: 680A
Kind of package: reel; tape
на замовлення 55 шт:
термін постачання 14-30 дні (днів)
| Кількість | Ціна без ПДВ |
|---|---|
| 8+ | 62.48 грн |
| 12+ | 38.79 грн |
| 25+ | 32.30 грн |
| 36+ | 27.17 грн |
| WMM120P06TS |
Виробник: WAYON
Category: SMD P channel transistors
Description: Transistor: P-MOSFET; unipolar; -60V; -120A; Idm: -480A; 183.8W
Mounting: SMD
Type of transistor: P-MOSFET
Gate-source voltage: ±20V
Kind of package: reel; tape
Case: TO263
On-state resistance: 6.8mΩ
Pulsed drain current: -480A
Power dissipation: 183.8W
Gate charge: 84nC
Polarisation: unipolar
Drain current: -120A
Kind of channel: enhancement
Drain-source voltage: -60V
Category: SMD P channel transistors
Description: Transistor: P-MOSFET; unipolar; -60V; -120A; Idm: -480A; 183.8W
Mounting: SMD
Type of transistor: P-MOSFET
Gate-source voltage: ±20V
Kind of package: reel; tape
Case: TO263
On-state resistance: 6.8mΩ
Pulsed drain current: -480A
Power dissipation: 183.8W
Gate charge: 84nC
Polarisation: unipolar
Drain current: -120A
Kind of channel: enhancement
Drain-source voltage: -60V
на замовлення 268 шт:
термін постачання 14-30 дні (днів)
| Кількість | Ціна без ПДВ |
|---|---|
| 6+ | 78.22 грн |
| 7+ | 69.21 грн |
| 25+ | 62.38 грн |
| WMM12N80M3 |
![]() |
Виробник: WAYON
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; WMOS™ M3; unipolar; 800V; 12A; 86W; TO263
Mounting: SMD
Power dissipation: 86W
Polarisation: unipolar
Technology: WMOS™ M3
Drain current: 12A
Kind of channel: enhancement
Drain-source voltage: 800V
Type of transistor: N-MOSFET
Gate-source voltage: ±30V
Kind of package: reel; tape
Case: TO263
On-state resistance: 620mΩ
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; WMOS™ M3; unipolar; 800V; 12A; 86W; TO263
Mounting: SMD
Power dissipation: 86W
Polarisation: unipolar
Technology: WMOS™ M3
Drain current: 12A
Kind of channel: enhancement
Drain-source voltage: 800V
Type of transistor: N-MOSFET
Gate-source voltage: ±30V
Kind of package: reel; tape
Case: TO263
On-state resistance: 620mΩ
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од. на суму грн.
| WMM130N20JN |
![]() |
Виробник: WAYON
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 200V; 117A; Idm: 620A; 416W; TO263
Drain-source voltage: 200V
Drain current: 117A
Case: TO263
Polarisation: unipolar
On-state resistance: 5.2mΩ
Pulsed drain current: 620A
Power dissipation: 416W
Kind of channel: enhancement
Gate charge: 188nC
Reverse recovery time: 196ns
Gate-source voltage: ±20V
Type of transistor: N-MOSFET
Kind of package: reel; tape
Mounting: SMD
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 200V; 117A; Idm: 620A; 416W; TO263
Drain-source voltage: 200V
Drain current: 117A
Case: TO263
Polarisation: unipolar
On-state resistance: 5.2mΩ
Pulsed drain current: 620A
Power dissipation: 416W
Kind of channel: enhancement
Gate charge: 188nC
Reverse recovery time: 196ns
Gate-source voltage: ±20V
Type of transistor: N-MOSFET
Kind of package: reel; tape
Mounting: SMD
товару немає в наявності
Мінімальне замовлення: 800 шт
В кошику
од. на суму грн.
| WMM13N80M3 |
![]() |
Виробник: WAYON
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; WMOS™ M3; unipolar; 800V; 13A; 130W; TO263
Type of transistor: N-MOSFET
Technology: WMOS™ M3
Polarisation: unipolar
Drain-source voltage: 800V
Drain current: 13A
Power dissipation: 130W
Case: TO263
Gate-source voltage: ±30V
On-state resistance: 0.48Ω
Mounting: SMD
Kind of package: reel; tape
Kind of channel: enhancement
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; WMOS™ M3; unipolar; 800V; 13A; 130W; TO263
Type of transistor: N-MOSFET
Technology: WMOS™ M3
Polarisation: unipolar
Drain-source voltage: 800V
Drain current: 13A
Power dissipation: 130W
Case: TO263
Gate-source voltage: ±30V
On-state resistance: 0.48Ω
Mounting: SMD
Kind of package: reel; tape
Kind of channel: enhancement
на замовлення 58 шт:
термін постачання 14-30 дні (днів)
| Кількість | Ціна без ПДВ |
|---|---|
| 10+ | 44.60 грн |
| 25+ | 40.42 грн |
| WMM14N65C4 |
![]() |
Виробник: WAYON
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; WMOS™ C4; unipolar; 650V; 6A; Idm: 26A; 85W
Type of transistor: N-MOSFET
Technology: WMOS™ C4
Polarisation: unipolar
Drain-source voltage: 650V
Drain current: 6A
Power dissipation: 85W
Case: TO263
Gate-source voltage: ±30V
On-state resistance: 0.38Ω
Mounting: SMD
Kind of package: reel; tape
Kind of channel: enhancement
Pulsed drain current: 26A
Gate charge: 13nC
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; WMOS™ C4; unipolar; 650V; 6A; Idm: 26A; 85W
Type of transistor: N-MOSFET
Technology: WMOS™ C4
Polarisation: unipolar
Drain-source voltage: 650V
Drain current: 6A
Power dissipation: 85W
Case: TO263
Gate-source voltage: ±30V
On-state resistance: 0.38Ω
Mounting: SMD
Kind of package: reel; tape
Kind of channel: enhancement
Pulsed drain current: 26A
Gate charge: 13nC
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В кошику
од. на суму грн.
| WMM15N60C4 |
Виробник: WAYON
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; WMOS™ C4; unipolar; 600V; 7.8A; Idm: 26A; 86W
Mounting: SMD
Kind of channel: enhancement
Drain-source voltage: 600V
Type of transistor: N-MOSFET
Gate-source voltage: ±30V
Kind of package: reel; tape
Case: TO263
On-state resistance: 0.3Ω
Pulsed drain current: 26A
Power dissipation: 86W
Gate charge: 14.6nC
Polarisation: unipolar
Technology: WMOS™ C4
Drain current: 7.8A
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; WMOS™ C4; unipolar; 600V; 7.8A; Idm: 26A; 86W
Mounting: SMD
Kind of channel: enhancement
Drain-source voltage: 600V
Type of transistor: N-MOSFET
Gate-source voltage: ±30V
Kind of package: reel; tape
Case: TO263
On-state resistance: 0.3Ω
Pulsed drain current: 26A
Power dissipation: 86W
Gate charge: 14.6nC
Polarisation: unipolar
Technology: WMOS™ C4
Drain current: 7.8A
на замовлення 269 шт:
термін постачання 14-30 дні (днів)
| Кількість | Ціна без ПДВ |
|---|---|
| 5+ | 97.54 грн |
| 6+ | 81.18 грн |
| 10+ | 68.36 грн |
| 20+ | 48.71 грн |
| 55+ | 46.14 грн |
| WMM15N65C4 |
Виробник: WAYON
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; WMOS™ C4; unipolar; 650V; 7.8A; Idm: 26A; 86W
Type of transistor: N-MOSFET
Power dissipation: 86W
Case: TO263
Mounting: SMD
Gate charge: 14.6nC
Kind of package: reel; tape
Pulsed drain current: 26A
Polarisation: unipolar
Technology: WMOS™ C4
Drain current: 7.8A
Kind of channel: enhancement
Drain-source voltage: 650V
Gate-source voltage: ±30V
On-state resistance: 0.3Ω
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; WMOS™ C4; unipolar; 650V; 7.8A; Idm: 26A; 86W
Type of transistor: N-MOSFET
Power dissipation: 86W
Case: TO263
Mounting: SMD
Gate charge: 14.6nC
Kind of package: reel; tape
Pulsed drain current: 26A
Polarisation: unipolar
Technology: WMOS™ C4
Drain current: 7.8A
Kind of channel: enhancement
Drain-source voltage: 650V
Gate-source voltage: ±30V
On-state resistance: 0.3Ω
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од. на суму грн.
| WMM15N80M3 |
![]() |
Виробник: WAYON
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; WMOS™ M3; unipolar; 800V; 15A; 150W; TO263
Type of transistor: N-MOSFET
Technology: WMOS™ M3
Polarisation: unipolar
Drain-source voltage: 800V
Drain current: 15A
Power dissipation: 150W
Case: TO263
Gate-source voltage: ±30V
On-state resistance: 0.36Ω
Mounting: SMD
Kind of package: reel; tape
Kind of channel: enhancement
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; WMOS™ M3; unipolar; 800V; 15A; 150W; TO263
Type of transistor: N-MOSFET
Technology: WMOS™ M3
Polarisation: unipolar
Drain-source voltage: 800V
Drain current: 15A
Power dissipation: 150W
Case: TO263
Gate-source voltage: ±30V
On-state resistance: 0.36Ω
Mounting: SMD
Kind of package: reel; tape
Kind of channel: enhancement
товару немає в наявності
Мінімальне замовлення: 800 шт
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| WMM161N15T2 |
Виробник: WAYON
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 150V; 161A; Idm: 540A; 365W; TO263
On-state resistance: 6mΩ
Mounting: SMD
Case: TO263
Pulsed drain current: 540A
Power dissipation: 365W
Gate charge: 78nC
Polarisation: unipolar
Drain current: 161A
Kind of channel: enhancement
Drain-source voltage: 150V
Type of transistor: N-MOSFET
Gate-source voltage: ±20V
Kind of package: reel; tape
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 150V; 161A; Idm: 540A; 365W; TO263
On-state resistance: 6mΩ
Mounting: SMD
Case: TO263
Pulsed drain current: 540A
Power dissipation: 365W
Gate charge: 78nC
Polarisation: unipolar
Drain current: 161A
Kind of channel: enhancement
Drain-source voltage: 150V
Type of transistor: N-MOSFET
Gate-source voltage: ±20V
Kind of package: reel; tape
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| WMM16N60FD |
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Виробник: WAYON
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; WMOS™ FD; unipolar; 600V; 13A; 86W; TO263
Type of transistor: N-MOSFET
Power dissipation: 86W
Case: TO263
Mounting: SMD
Kind of package: reel; tape
Drain current: 13A
Kind of channel: enhancement
Drain-source voltage: 600V
Gate-source voltage: ±30V
On-state resistance: 0.32Ω
Polarisation: unipolar
Technology: WMOS™ FD
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; WMOS™ FD; unipolar; 600V; 13A; 86W; TO263
Type of transistor: N-MOSFET
Power dissipation: 86W
Case: TO263
Mounting: SMD
Kind of package: reel; tape
Drain current: 13A
Kind of channel: enhancement
Drain-source voltage: 600V
Gate-source voltage: ±30V
On-state resistance: 0.32Ω
Polarisation: unipolar
Technology: WMOS™ FD
на замовлення 298 шт:
термін постачання 14-30 дні (днів)
| Кількість | Ціна без ПДВ |
|---|---|
| 5+ | 98.46 грн |
| 6+ | 81.18 грн |
| 14+ | 72.63 грн |
| 38+ | 68.36 грн |
| 100+ | 67.51 грн |
| WMM17N25JN |
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Виробник: WAYON
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 250V; 6.5A; Idm: 33A; 36W; TO263
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 250V
Drain current: 6.5A
Pulsed drain current: 33A
Power dissipation: 36W
Case: TO263
Gate-source voltage: ±20V
On-state resistance: 0.17Ω
Mounting: SMD
Gate charge: 7.1nC
Kind of package: reel; tape
Kind of channel: enhancement
Reverse recovery time: 98ns
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 250V; 6.5A; Idm: 33A; 36W; TO263
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 250V
Drain current: 6.5A
Pulsed drain current: 33A
Power dissipation: 36W
Case: TO263
Gate-source voltage: ±20V
On-state resistance: 0.17Ω
Mounting: SMD
Gate charge: 7.1nC
Kind of package: reel; tape
Kind of channel: enhancement
Reverse recovery time: 98ns
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| WMM180N03TS |
Виробник: WAYON
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 30V; 180A; Idm: 720A; 181W; TO263
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 30V
Drain current: 180A
Power dissipation: 181W
Case: TO263
Gate-source voltage: ±20V
On-state resistance: 3.5mΩ
Mounting: SMD
Kind of channel: enhancement
Pulsed drain current: 720A
Gate charge: 32nC
Kind of package: reel; tape
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 30V; 180A; Idm: 720A; 181W; TO263
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 30V
Drain current: 180A
Power dissipation: 181W
Case: TO263
Gate-source voltage: ±20V
On-state resistance: 3.5mΩ
Mounting: SMD
Kind of channel: enhancement
Pulsed drain current: 720A
Gate charge: 32nC
Kind of package: reel; tape
на замовлення 69 шт:
термін постачання 14-30 дні (днів)
| Кількість | Ціна без ПДВ |
|---|---|
| 8+ | 62.58 грн |
| 14+ | 32.81 грн |
| 25+ | 27.34 грн |
| WMM18N20JN |
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Виробник: WAYON
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 200V; 7A; Idm: 39A; 36W; TO263; 80ns
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 200V
Drain current: 7A
Power dissipation: 36W
Case: TO263
Gate-source voltage: ±20V
On-state resistance: 135mΩ
Mounting: SMD
Gate charge: 7.2nC
Kind of package: reel; tape
Kind of channel: enhancement
Reverse recovery time: 80ns
Pulsed drain current: 39A
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 200V; 7A; Idm: 39A; 36W; TO263; 80ns
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 200V
Drain current: 7A
Power dissipation: 36W
Case: TO263
Gate-source voltage: ±20V
On-state resistance: 135mΩ
Mounting: SMD
Gate charge: 7.2nC
Kind of package: reel; tape
Kind of channel: enhancement
Reverse recovery time: 80ns
Pulsed drain current: 39A
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| WMM190N03TS |
Виробник: WAYON
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 30V; 190A; Idm: 760A; 192W; TO263
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 30V
Drain current: 190A
Pulsed drain current: 760A
Power dissipation: 192W
Case: TO263
Gate-source voltage: ±20V
On-state resistance: 2.6mΩ
Mounting: SMD
Gate charge: 0.1µC
Kind of package: reel; tape
Kind of channel: enhancement
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 30V; 190A; Idm: 760A; 192W; TO263
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 30V
Drain current: 190A
Pulsed drain current: 760A
Power dissipation: 192W
Case: TO263
Gate-source voltage: ±20V
On-state resistance: 2.6mΩ
Mounting: SMD
Gate charge: 0.1µC
Kind of package: reel; tape
Kind of channel: enhancement
на замовлення 74 шт:
термін постачання 14-30 дні (днів)
| Кількість | Ціна без ПДВ |
|---|---|
| 9+ | 56.13 грн |
| 13+ | 33.33 грн |
| 25+ | 27.86 грн |
| WMM20N20JN |
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Виробник: WAYON
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 200V; 12A; Idm: 60A; 59W; TO263
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 200V
Drain current: 12A
Pulsed drain current: 60A
Power dissipation: 59W
Case: TO263
Gate-source voltage: ±20V
On-state resistance: 80mΩ
Mounting: SMD
Kind of package: reel; tape
Kind of channel: enhancement
Gate charge: 4.1nC
Reverse recovery time: 110ns
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 200V; 12A; Idm: 60A; 59W; TO263
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 200V
Drain current: 12A
Pulsed drain current: 60A
Power dissipation: 59W
Case: TO263
Gate-source voltage: ±20V
On-state resistance: 80mΩ
Mounting: SMD
Kind of package: reel; tape
Kind of channel: enhancement
Gate charge: 4.1nC
Reverse recovery time: 110ns
на замовлення 587 шт:
термін постачання 14-30 дні (днів)
| Кількість | Ціна без ПДВ |
|---|---|
| 9+ | 54.29 грн |
| 13+ | 33.84 грн |
| 100+ | 30.59 грн |
| 200+ | 26.92 грн |
| 400+ | 24.27 грн |
| WMM20N60C2 |
Виробник: WAYON
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; WMOS™ C2; unipolar; 600V; 15A; 86W; TO263
Type of transistor: N-MOSFET
Technology: WMOS™ C2
Polarisation: unipolar
Drain-source voltage: 600V
Drain current: 15A
Power dissipation: 86W
Case: TO263
Gate-source voltage: ±30V
On-state resistance: 0.3Ω
Mounting: SMD
Kind of package: reel; tape
Kind of channel: enhancement
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; WMOS™ C2; unipolar; 600V; 15A; 86W; TO263
Type of transistor: N-MOSFET
Technology: WMOS™ C2
Polarisation: unipolar
Drain-source voltage: 600V
Drain current: 15A
Power dissipation: 86W
Case: TO263
Gate-source voltage: ±30V
On-state resistance: 0.3Ω
Mounting: SMD
Kind of package: reel; tape
Kind of channel: enhancement
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| WMM240P10HG4 |
Виробник: WAYON
Category: SMD P channel transistors
Description: Transistor: P-MOSFET; unipolar; -100V; -38A; Idm: -240A; 192.3W
Type of transistor: P-MOSFET
Polarisation: unipolar
Drain-source voltage: -100V
Drain current: -38A
Pulsed drain current: -240A
Power dissipation: 192.3W
Case: TO263
Gate-source voltage: ±20V
On-state resistance: 26mΩ
Mounting: SMD
Gate charge: 64.6nC
Kind of package: reel; tape
Kind of channel: enhancement
Category: SMD P channel transistors
Description: Transistor: P-MOSFET; unipolar; -100V; -38A; Idm: -240A; 192.3W
Type of transistor: P-MOSFET
Polarisation: unipolar
Drain-source voltage: -100V
Drain current: -38A
Pulsed drain current: -240A
Power dissipation: 192.3W
Case: TO263
Gate-source voltage: ±20V
On-state resistance: 26mΩ
Mounting: SMD
Gate charge: 64.6nC
Kind of package: reel; tape
Kind of channel: enhancement
на замовлення 2 шт:
термін постачання 14-30 дні (днів)
| Кількість | Ціна без ПДВ |
|---|---|
| 2+ | 230.06 грн |
| WMM25N80M3 |
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Виробник: WAYON
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; WMOS™ M3; unipolar; 800V; 21A; 250W; TO263
Type of transistor: N-MOSFET
Technology: WMOS™ M3
Polarisation: unipolar
Drain-source voltage: 800V
Drain current: 21A
Power dissipation: 250W
Case: TO263
Gate-source voltage: ±30V
On-state resistance: 0.26Ω
Mounting: SMD
Kind of package: reel; tape
Kind of channel: enhancement
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; WMOS™ M3; unipolar; 800V; 21A; 250W; TO263
Type of transistor: N-MOSFET
Technology: WMOS™ M3
Polarisation: unipolar
Drain-source voltage: 800V
Drain current: 21A
Power dissipation: 250W
Case: TO263
Gate-source voltage: ±30V
On-state resistance: 0.26Ω
Mounting: SMD
Kind of package: reel; tape
Kind of channel: enhancement
на замовлення 352 шт:
термін постачання 14-30 дні (днів)
| Кількість | Ціна без ПДВ |
|---|---|
| 3+ | 183.12 грн |
| 10+ | 161.50 грн |
| 100+ | 145.26 грн |
| 250+ | 137.57 грн |
| WMM26N60C4 |
Виробник: WAYON
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; WMOS™ C4; unipolar; 600V; 10.5A; Idm: 40A
Type of transistor: N-MOSFET
Technology: WMOS™ C4
Polarisation: unipolar
Drain-source voltage: 600V
Drain current: 10.5A
Power dissipation: 135W
Case: TO263
Gate-source voltage: ±30V
On-state resistance: 0.19Ω
Mounting: SMD
Gate charge: 22.1nC
Kind of package: reel; tape
Kind of channel: enhancement
Pulsed drain current: 40A
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; WMOS™ C4; unipolar; 600V; 10.5A; Idm: 40A
Type of transistor: N-MOSFET
Technology: WMOS™ C4
Polarisation: unipolar
Drain-source voltage: 600V
Drain current: 10.5A
Power dissipation: 135W
Case: TO263
Gate-source voltage: ±30V
On-state resistance: 0.19Ω
Mounting: SMD
Gate charge: 22.1nC
Kind of package: reel; tape
Kind of channel: enhancement
Pulsed drain current: 40A
на замовлення 780 шт:
термін постачання 14-30 дні (днів)
| Кількість | Ціна без ПДВ |
|---|---|
| 3+ | 161.04 грн |
| 4+ | 133.30 грн |
| 10+ | 112.79 грн |
| 12+ | 81.18 грн |
| 33+ | 76.90 грн |
| WMM26N60F2 |
Виробник: WAYON
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; WMOS™ F2; unipolar; 600V; 10.5A; Idm: 40A
Type of transistor: N-MOSFET
Technology: WMOS™ F2
Polarisation: unipolar
Drain-source voltage: 600V
Drain current: 10.5A
Power dissipation: 135W
Case: TO263
Gate-source voltage: ±30V
On-state resistance: 0.21Ω
Mounting: SMD
Gate charge: 22.1nC
Kind of package: reel; tape
Kind of channel: enhancement
Pulsed drain current: 40A
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; WMOS™ F2; unipolar; 600V; 10.5A; Idm: 40A
Type of transistor: N-MOSFET
Technology: WMOS™ F2
Polarisation: unipolar
Drain-source voltage: 600V
Drain current: 10.5A
Power dissipation: 135W
Case: TO263
Gate-source voltage: ±30V
On-state resistance: 0.21Ω
Mounting: SMD
Gate charge: 22.1nC
Kind of package: reel; tape
Kind of channel: enhancement
Pulsed drain current: 40A
на замовлення 796 шт:
термін постачання 14-30 дні (днів)
| Кількість | Ціна без ПДВ |
|---|---|
| 3+ | 153.68 грн |
| 4+ | 126.47 грн |
| 10+ | 105.96 грн |
| 11+ | 89.72 грн |
| 30+ | 85.45 грн |
| 100+ | 84.59 грн |
| 500+ | 82.03 грн |
| WMM26N60FD |
![]() |
Виробник: WAYON
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; WMOS™ FD; unipolar; 600V; 20A; 147W; TO263
Type of transistor: N-MOSFET
Technology: WMOS™ FD
Polarisation: unipolar
Drain-source voltage: 600V
Drain current: 20A
Power dissipation: 147W
Case: TO263
Gate-source voltage: ±30V
On-state resistance: 0.2Ω
Mounting: SMD
Kind of package: reel; tape
Kind of channel: enhancement
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; WMOS™ FD; unipolar; 600V; 20A; 147W; TO263
Type of transistor: N-MOSFET
Technology: WMOS™ FD
Polarisation: unipolar
Drain-source voltage: 600V
Drain current: 20A
Power dissipation: 147W
Case: TO263
Gate-source voltage: ±30V
On-state resistance: 0.2Ω
Mounting: SMD
Kind of package: reel; tape
Kind of channel: enhancement
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| WMM26N65FD |
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Виробник: WAYON
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; WMOS™ FD; unipolar; 650V; 20A; 147W; TO263
Type of transistor: N-MOSFET
Technology: WMOS™ FD
Polarisation: unipolar
Drain-source voltage: 650V
Drain current: 20A
Power dissipation: 147W
Case: TO263
Gate-source voltage: ±30V
On-state resistance: 0.2Ω
Mounting: SMD
Kind of package: reel; tape
Kind of channel: enhancement
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; WMOS™ FD; unipolar; 650V; 20A; 147W; TO263
Type of transistor: N-MOSFET
Technology: WMOS™ FD
Polarisation: unipolar
Drain-source voltage: 650V
Drain current: 20A
Power dissipation: 147W
Case: TO263
Gate-source voltage: ±30V
On-state resistance: 0.2Ω
Mounting: SMD
Kind of package: reel; tape
Kind of channel: enhancement
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| WMM28N60C4 |
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Виробник: WAYON
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; WMOS™ C4; unipolar; 600V; 13A; Idm: 65A; 160W
Type of transistor: N-MOSFET
Technology: WMOS™ C4
Power dissipation: 160W
Case: TO263
Mounting: SMD
Gate charge: 27.3nC
Kind of package: reel; tape
Pulsed drain current: 65A
Polarisation: unipolar
Drain current: 13A
Kind of channel: enhancement
Drain-source voltage: 600V
Gate-source voltage: ±30V
On-state resistance: 0.16Ω
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; WMOS™ C4; unipolar; 600V; 13A; Idm: 65A; 160W
Type of transistor: N-MOSFET
Technology: WMOS™ C4
Power dissipation: 160W
Case: TO263
Mounting: SMD
Gate charge: 27.3nC
Kind of package: reel; tape
Pulsed drain current: 65A
Polarisation: unipolar
Drain current: 13A
Kind of channel: enhancement
Drain-source voltage: 600V
Gate-source voltage: ±30V
On-state resistance: 0.16Ω
на замовлення 498 шт:
термін постачання 14-30 дні (днів)
| Кількість | Ціна без ПДВ |
|---|---|
| 4+ | 112.79 грн |
| 10+ | 104.25 грн |
| 11+ | 91.43 грн |
| 29+ | 87.16 грн |
| 250+ | 83.74 грн |
| WMM340N20HG2 |
Виробник: WAYON
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 200V; 50A; Idm: 148A; 173.6W; TO263
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 200V
Drain current: 50A
Pulsed drain current: 148A
Power dissipation: 173.6W
Case: TO263
Gate-source voltage: ±20V
On-state resistance: 34mΩ
Mounting: SMD
Gate charge: 23nC
Kind of package: reel; tape
Kind of channel: enhancement
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 200V; 50A; Idm: 148A; 173.6W; TO263
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 200V
Drain current: 50A
Pulsed drain current: 148A
Power dissipation: 173.6W
Case: TO263
Gate-source voltage: ±20V
On-state resistance: 34mΩ
Mounting: SMD
Gate charge: 23nC
Kind of package: reel; tape
Kind of channel: enhancement
на замовлення 100 шт:
термін постачання 14-30 дні (днів)
| Кількість | Ціна без ПДВ |
|---|---|
| 5+ | 96.56 грн |
| 25+ | 85.45 грн |
| 100+ | 76.90 грн |
| WMM36N60C4 |
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Виробник: WAYON
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; WMOS™ C4; unipolar; 600V; 20A; Idm: 100A; 277W
Type of transistor: N-MOSFET
Technology: WMOS™ C4
Power dissipation: 277W
Case: TO263
Mounting: SMD
Gate charge: 46nC
Kind of package: reel; tape
Drain current: 20A
Kind of channel: enhancement
Drain-source voltage: 600V
Gate-source voltage: ±30V
On-state resistance: 97mΩ
Pulsed drain current: 100A
Polarisation: unipolar
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; WMOS™ C4; unipolar; 600V; 20A; Idm: 100A; 277W
Type of transistor: N-MOSFET
Technology: WMOS™ C4
Power dissipation: 277W
Case: TO263
Mounting: SMD
Gate charge: 46nC
Kind of package: reel; tape
Drain current: 20A
Kind of channel: enhancement
Drain-source voltage: 600V
Gate-source voltage: ±30V
On-state resistance: 97mΩ
Pulsed drain current: 100A
Polarisation: unipolar
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| WMM36N60F2 |
Виробник: WAYON
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; WMOS™ F2; unipolar; 600V; 20A; Idm: 100A; 277W
Type of transistor: N-MOSFET
Technology: WMOS™ F2
Polarisation: unipolar
Drain-source voltage: 600V
Drain current: 20A
Power dissipation: 277W
Case: TO263
Gate-source voltage: ±30V
On-state resistance: 0.11Ω
Mounting: SMD
Kind of package: reel; tape
Kind of channel: enhancement
Pulsed drain current: 100A
Gate charge: 46nC
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; WMOS™ F2; unipolar; 600V; 20A; Idm: 100A; 277W
Type of transistor: N-MOSFET
Technology: WMOS™ F2
Polarisation: unipolar
Drain-source voltage: 600V
Drain current: 20A
Power dissipation: 277W
Case: TO263
Gate-source voltage: ±30V
On-state resistance: 0.11Ω
Mounting: SMD
Kind of package: reel; tape
Kind of channel: enhancement
Pulsed drain current: 100A
Gate charge: 46nC
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| WMM36N65C4 |
Виробник: WAYON
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; WMOS™ C4; unipolar; 650V; 20A; Idm: 100A; 277W
Type of transistor: N-MOSFET
Technology: WMOS™ C4
Polarisation: unipolar
Drain-source voltage: 650V
Drain current: 20A
Pulsed drain current: 100A
Power dissipation: 277W
Case: TO263
Gate-source voltage: ±30V
On-state resistance: 97mΩ
Mounting: SMD
Gate charge: 46nC
Kind of package: reel; tape
Kind of channel: enhancement
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; WMOS™ C4; unipolar; 650V; 20A; Idm: 100A; 277W
Type of transistor: N-MOSFET
Technology: WMOS™ C4
Polarisation: unipolar
Drain-source voltage: 650V
Drain current: 20A
Pulsed drain current: 100A
Power dissipation: 277W
Case: TO263
Gate-source voltage: ±30V
On-state resistance: 97mΩ
Mounting: SMD
Gate charge: 46nC
Kind of package: reel; tape
Kind of channel: enhancement
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| WMM36N65F2 |
Виробник: WAYON
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; WMOS™ F2; unipolar; 650V; 20A; Idm: 100A; 277W
Type of transistor: N-MOSFET
Technology: WMOS™ F2
Polarisation: unipolar
Drain-source voltage: 650V
Drain current: 20A
Pulsed drain current: 100A
Power dissipation: 277W
Case: TO263
Gate-source voltage: ±30V
On-state resistance: 0.11Ω
Mounting: SMD
Gate charge: 46nC
Kind of package: reel; tape
Kind of channel: enhancement
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; WMOS™ F2; unipolar; 650V; 20A; Idm: 100A; 277W
Type of transistor: N-MOSFET
Technology: WMOS™ F2
Polarisation: unipolar
Drain-source voltage: 650V
Drain current: 20A
Pulsed drain current: 100A
Power dissipation: 277W
Case: TO263
Gate-source voltage: ±30V
On-state resistance: 0.11Ω
Mounting: SMD
Gate charge: 46nC
Kind of package: reel; tape
Kind of channel: enhancement
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| WMM38N60C2 |
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Виробник: WAYON
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; WMOS™ C2; unipolar; 600V; 38A; 277W; TO263
Type of transistor: N-MOSFET
Technology: WMOS™ C2
Power dissipation: 277W
Case: TO263
Mounting: SMD
Kind of package: reel; tape
Polarisation: unipolar
Drain current: 38A
Kind of channel: enhancement
Drain-source voltage: 600V
Gate-source voltage: ±30V
On-state resistance: 99mΩ
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; WMOS™ C2; unipolar; 600V; 38A; 277W; TO263
Type of transistor: N-MOSFET
Technology: WMOS™ C2
Power dissipation: 277W
Case: TO263
Mounting: SMD
Kind of package: reel; tape
Polarisation: unipolar
Drain current: 38A
Kind of channel: enhancement
Drain-source voltage: 600V
Gate-source voltage: ±30V
On-state resistance: 99mΩ
на замовлення 6 шт:
термін постачання 14-30 дні (днів)
| Кількість | Ціна без ПДВ |
|---|---|
| 3+ | 177.60 грн |
| WMM38N60FD |
Виробник: WAYON
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; WMOS™ FD; unipolar; 600V; 38A; 277W; TO263
Type of transistor: N-MOSFET
Technology: WMOS™ FD
Polarisation: unipolar
Drain-source voltage: 600V
Drain current: 38A
Power dissipation: 277W
Case: TO263
Gate-source voltage: ±30V
On-state resistance: 0.115Ω
Mounting: SMD
Kind of package: reel; tape
Kind of channel: enhancement
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; WMOS™ FD; unipolar; 600V; 38A; 277W; TO263
Type of transistor: N-MOSFET
Technology: WMOS™ FD
Polarisation: unipolar
Drain-source voltage: 600V
Drain current: 38A
Power dissipation: 277W
Case: TO263
Gate-source voltage: ±30V
On-state resistance: 0.115Ω
Mounting: SMD
Kind of package: reel; tape
Kind of channel: enhancement
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| WMM38N65FD |
Виробник: WAYON
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; WMOS™ FD; unipolar; 650V; 38A; 277W; TO263
Type of transistor: N-MOSFET
Technology: WMOS™ FD
Polarisation: unipolar
Drain-source voltage: 650V
Drain current: 38A
Power dissipation: 277W
Case: TO263
Gate-source voltage: ±30V
On-state resistance: 0.115Ω
Mounting: SMD
Kind of package: reel; tape
Kind of channel: enhancement
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; WMOS™ FD; unipolar; 650V; 38A; 277W; TO263
Type of transistor: N-MOSFET
Technology: WMOS™ FD
Polarisation: unipolar
Drain-source voltage: 650V
Drain current: 38A
Power dissipation: 277W
Case: TO263
Gate-source voltage: ±30V
On-state resistance: 0.115Ω
Mounting: SMD
Kind of package: reel; tape
Kind of channel: enhancement
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| WMM40N20JN |
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Виробник: WAYON
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 200V; 21A; Idm: 110A; 89W; TO263
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 200V
Drain current: 21A
Pulsed drain current: 110A
Power dissipation: 89W
Case: TO263
Gate-source voltage: ±20V
On-state resistance: 46mΩ
Mounting: SMD
Gate charge: 7.7nC
Kind of package: reel; tape
Kind of channel: enhancement
Reverse recovery time: 141ns
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 200V; 21A; Idm: 110A; 89W; TO263
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 200V
Drain current: 21A
Pulsed drain current: 110A
Power dissipation: 89W
Case: TO263
Gate-source voltage: ±20V
On-state resistance: 46mΩ
Mounting: SMD
Gate charge: 7.7nC
Kind of package: reel; tape
Kind of channel: enhancement
Reverse recovery time: 141ns
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| WMM4N90D1 |
Виробник: WAYON
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; WMOS™ D1; unipolar; 900V; 4A; Idm: 16A; 65W
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 900V
Drain current: 4A
Case: TO263
Gate-source voltage: ±30V
On-state resistance: 2.9Ω
Mounting: SMD
Gate charge: 26nC
Kind of channel: enhancement
Technology: WMOS™ D1
Kind of package: reel; tape
Pulsed drain current: 16A
Power dissipation: 65W
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; WMOS™ D1; unipolar; 900V; 4A; Idm: 16A; 65W
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 900V
Drain current: 4A
Case: TO263
Gate-source voltage: ±30V
On-state resistance: 2.9Ω
Mounting: SMD
Gate charge: 26nC
Kind of channel: enhancement
Technology: WMOS™ D1
Kind of package: reel; tape
Pulsed drain current: 16A
Power dissipation: 65W
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| WMM4N90D1B |
Виробник: WAYON
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; WMOS™ D1; unipolar; 900V; 4A; Idm: 16A; 63W
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 900V
Drain current: 4A
Case: TO263
Gate-source voltage: ±30V
On-state resistance: 1.85Ω
Mounting: SMD
Gate charge: 34nC
Kind of channel: enhancement
Technology: WMOS™ D1
Kind of package: reel; tape
Pulsed drain current: 16A
Power dissipation: 63W
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; WMOS™ D1; unipolar; 900V; 4A; Idm: 16A; 63W
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 900V
Drain current: 4A
Case: TO263
Gate-source voltage: ±30V
On-state resistance: 1.85Ω
Mounting: SMD
Gate charge: 34nC
Kind of channel: enhancement
Technology: WMOS™ D1
Kind of package: reel; tape
Pulsed drain current: 16A
Power dissipation: 63W
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| WMM50N20JN |
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Виробник: WAYON
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 200V; 24A; Idm: 120A; 90W; TO263
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 200V
Drain current: 24A
Pulsed drain current: 120A
Power dissipation: 90W
Case: TO263
Gate-source voltage: ±20V
On-state resistance: 35mΩ
Mounting: SMD
Gate charge: 10nC
Kind of package: reel; tape
Kind of channel: enhancement
Reverse recovery time: 138ns
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 200V; 24A; Idm: 120A; 90W; TO263
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 200V
Drain current: 24A
Pulsed drain current: 120A
Power dissipation: 90W
Case: TO263
Gate-source voltage: ±20V
On-state resistance: 35mΩ
Mounting: SMD
Gate charge: 10nC
Kind of package: reel; tape
Kind of channel: enhancement
Reverse recovery time: 138ns
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