| Фото | Назва | Виробник | Інформація |
Доступність |
Ціна |
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WMK340N20HG2 | WAYON |
Category: THT N channel transistors Description: Transistor: N-MOSFET; unipolar; 200V; 50A; Idm: 200A; 173.6W Type of transistor: N-MOSFET Polarisation: unipolar Drain-source voltage: 200V Drain current: 50A Pulsed drain current: 200A Power dissipation: 173.6W Case: TO220-3 Gate-source voltage: ±20V On-state resistance: 34mΩ Mounting: THT Gate charge: 23nC Kind of package: tube Kind of channel: enhancement кількість в упаковці: 1 шт |
на замовлення 89 шт: термін постачання 14-21 дні (днів) |
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WMK36N60C4 | WAYON |
Category: THT N channel transistorsDescription: Transistor: N-MOSFET; WMOS™ C4; unipolar; 600V; 20A; Idm: 100A; 277W Type of transistor: N-MOSFET Technology: WMOS™ C4 Polarisation: unipolar Drain-source voltage: 600V Drain current: 20A Pulsed drain current: 100A Power dissipation: 277W Case: TO220-3 Gate-source voltage: ±30V On-state resistance: 97mΩ Mounting: THT Gate charge: 46nC Kind of package: tube Kind of channel: enhancement |
на замовлення 334 шт: термін постачання 21-30 дні (днів) |
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WMK36N60C4 | WAYON |
Category: THT N channel transistorsDescription: Transistor: N-MOSFET; WMOS™ C4; unipolar; 600V; 20A; Idm: 100A; 277W Type of transistor: N-MOSFET Technology: WMOS™ C4 Polarisation: unipolar Drain-source voltage: 600V Drain current: 20A Pulsed drain current: 100A Power dissipation: 277W Case: TO220-3 Gate-source voltage: ±30V On-state resistance: 97mΩ Mounting: THT Gate charge: 46nC Kind of package: tube Kind of channel: enhancement кількість в упаковці: 1 шт |
на замовлення 334 шт: термін постачання 14-21 дні (днів) |
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WMK36N60F2 | WAYON |
Category: THT N channel transistors Description: Transistor: N-MOSFET; WMOS™ F2; unipolar; 600V; 20A; Idm: 100A; 277W Type of transistor: N-MOSFET Technology: WMOS™ F2 Polarisation: unipolar Drain-source voltage: 600V Drain current: 20A Pulsed drain current: 100A Power dissipation: 277W Case: TO220-3 Gate-source voltage: ±30V On-state resistance: 0.11Ω Mounting: THT Gate charge: 46nC Kind of package: tube Kind of channel: enhancement |
на замовлення 9 шт: термін постачання 21-30 дні (днів) |
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WMK36N60F2 | WAYON |
Category: THT N channel transistors Description: Transistor: N-MOSFET; WMOS™ F2; unipolar; 600V; 20A; Idm: 100A; 277W Type of transistor: N-MOSFET Technology: WMOS™ F2 Polarisation: unipolar Drain-source voltage: 600V Drain current: 20A Pulsed drain current: 100A Power dissipation: 277W Case: TO220-3 Gate-source voltage: ±30V On-state resistance: 0.11Ω Mounting: THT Gate charge: 46nC Kind of package: tube Kind of channel: enhancement кількість в упаковці: 1 шт |
на замовлення 9 шт: термін постачання 14-21 дні (днів) |
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WMK36N65C4 | WAYON |
Category: THT N channel transistors Description: Transistor: N-MOSFET; WMOS™ C4; unipolar; 650V; 20A; Idm: 100A; 277W Type of transistor: N-MOSFET Technology: WMOS™ C4 Polarisation: unipolar Drain-source voltage: 650V Drain current: 20A Pulsed drain current: 100A Power dissipation: 277W Case: TO220-3 Gate-source voltage: ±30V On-state resistance: 97mΩ Mounting: THT Gate charge: 46nC Kind of package: tube Kind of channel: enhancement |
на замовлення 208 шт: термін постачання 21-30 дні (днів) |
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WMK36N65C4 | WAYON |
Category: THT N channel transistors Description: Transistor: N-MOSFET; WMOS™ C4; unipolar; 650V; 20A; Idm: 100A; 277W Type of transistor: N-MOSFET Technology: WMOS™ C4 Polarisation: unipolar Drain-source voltage: 650V Drain current: 20A Pulsed drain current: 100A Power dissipation: 277W Case: TO220-3 Gate-source voltage: ±30V On-state resistance: 97mΩ Mounting: THT Gate charge: 46nC Kind of package: tube Kind of channel: enhancement кількість в упаковці: 1 шт |
на замовлення 208 шт: термін постачання 14-21 дні (днів) |
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| WMK36N65F2 | WAYON |
Category: THT N channel transistors Description: Transistor: N-MOSFET; WMOS™ F2; unipolar; 650V; 20A; Idm: 100A; 277W Type of transistor: N-MOSFET Technology: WMOS™ F2 Polarisation: unipolar Drain-source voltage: 650V Drain current: 20A Pulsed drain current: 100A Power dissipation: 277W Case: TO220-3 Gate-source voltage: ±30V On-state resistance: 0.11Ω Mounting: THT Gate charge: 46nC Kind of package: tube Kind of channel: enhancement |
товару немає в наявності |
В кошику од. на суму грн. | |||||||||||||||
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WMK38N60FD | WAYON |
Category: THT N channel transistors Description: Transistor: N-MOSFET; WMOS™ FD; unipolar; 600V; 38A; 277W; TO220-3 Type of transistor: N-MOSFET Technology: WMOS™ FD Polarisation: unipolar Drain-source voltage: 600V Drain current: 38A Power dissipation: 277W Case: TO220-3 Gate-source voltage: ±30V On-state resistance: 0.115Ω Mounting: THT Kind of package: tube Kind of channel: enhancement Heatsink thickness: 1.2...1.45mm |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||||||||
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WMK38N65C2 | WAYON |
Category: THT N channel transistorsDescription: Transistor: N-MOSFET; WMOS™ C2; unipolar; 650V; 38A; 277W; TO220-3 Type of transistor: N-MOSFET Technology: WMOS™ C2 Polarisation: unipolar Drain-source voltage: 650V Drain current: 38A Power dissipation: 277W Case: TO220-3 Gate-source voltage: ±30V On-state resistance: 99mΩ Mounting: THT Kind of package: tube Kind of channel: enhancement Heatsink thickness: 1.2...1.45mm |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||||||||
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WMK38N65FD | WAYON |
Category: THT N channel transistors Description: Transistor: N-MOSFET; WMOS™ FD; unipolar; 650V; 38A; 277W; TO220-3 Type of transistor: N-MOSFET Technology: WMOS™ FD Polarisation: unipolar Drain-source voltage: 650V Drain current: 38A Power dissipation: 277W Case: TO220-3 Gate-source voltage: ±30V On-state resistance: 0.115Ω Mounting: THT Kind of package: tube Kind of channel: enhancement Heatsink thickness: 1.2...1.45mm |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||||||||
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WMK3N150D1 | WAYON |
Category: THT N channel transistors Description: Transistor: N-MOSFET; WMOS™ D1; unipolar; 1.5kV; 3A; Idm: 12A; 125W Case: TO220-3 Mounting: THT Kind of package: tube Type of transistor: N-MOSFET Polarisation: unipolar Gate charge: 40nC On-state resistance: 5.7Ω Drain current: 3A Pulsed drain current: 12A Gate-source voltage: ±30V Power dissipation: 125W Drain-source voltage: 1.5kV Kind of channel: enhancement Technology: WMOS™ D1 |
на замовлення 171 шт: термін постачання 21-30 дні (днів) |
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WMK3N150D1 | WAYON |
Category: THT N channel transistors Description: Transistor: N-MOSFET; WMOS™ D1; unipolar; 1.5kV; 3A; Idm: 12A; 125W Case: TO220-3 Mounting: THT Kind of package: tube Type of transistor: N-MOSFET Polarisation: unipolar Gate charge: 40nC On-state resistance: 5.7Ω Drain current: 3A Pulsed drain current: 12A Gate-source voltage: ±30V Power dissipation: 125W Drain-source voltage: 1.5kV Kind of channel: enhancement Technology: WMOS™ D1 кількість в упаковці: 1 шт |
на замовлення 171 шт: термін постачання 14-21 дні (днів) |
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| WMK40N20JN | WAYON |
Category: THT N channel transistorsDescription: Transistor: N-MOSFET; unipolar; 200V; 21A; Idm: 110A; 89W; TO220-3 Type of transistor: N-MOSFET Polarisation: unipolar Drain-source voltage: 200V Drain current: 21A Pulsed drain current: 110A Power dissipation: 89W Case: TO220-3 Gate-source voltage: ±20V On-state resistance: 46mΩ Mounting: THT Gate charge: 7.7nC Kind of package: tube Kind of channel: enhancement Reverse recovery time: 141ns |
товару немає в наявності |
В кошику од. на суму грн. | |||||||||||||||
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WMK4N65D1B | WAYON |
Category: THT N channel transistors Description: Transistor: N-MOSFET; WMOS™ D1; unipolar; 650V; 4A; Idm: 16A; 112W Type of transistor: N-MOSFET Polarisation: unipolar Drain-source voltage: 650V Drain current: 4A Pulsed drain current: 16A Power dissipation: 112W Case: TO220-3 Gate-source voltage: ±30V On-state resistance: 2.2Ω Mounting: THT Gate charge: 14.5nC Kind of package: tube Kind of channel: enhancement Technology: WMOS™ D1 |
на замовлення 31 шт: термін постачання 21-30 дні (днів) |
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WMK4N65D1B | WAYON |
Category: THT N channel transistors Description: Transistor: N-MOSFET; WMOS™ D1; unipolar; 650V; 4A; Idm: 16A; 112W Type of transistor: N-MOSFET Polarisation: unipolar Drain-source voltage: 650V Drain current: 4A Pulsed drain current: 16A Power dissipation: 112W Case: TO220-3 Gate-source voltage: ±30V On-state resistance: 2.2Ω Mounting: THT Gate charge: 14.5nC Kind of package: tube Kind of channel: enhancement Technology: WMOS™ D1 кількість в упаковці: 1 шт |
на замовлення 31 шт: термін постачання 14-21 дні (днів) |
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| WMK4N90D1 | WAYON |
Category: THT N channel transistors Description: Transistor: N-MOSFET; WMOS™ D1; unipolar; 900V; 4A; Idm: 16A; 65W Type of transistor: N-MOSFET Polarisation: unipolar Drain-source voltage: 900V Drain current: 4A Case: TO220-3 Gate-source voltage: ±30V On-state resistance: 2.9Ω Mounting: THT Kind of package: tube Kind of channel: enhancement Technology: WMOS™ D1 Gate charge: 26nC Pulsed drain current: 16A Power dissipation: 65W |
товару немає в наявності |
В кошику од. на суму грн. | |||||||||||||||
| WMK4N90D1B | WAYON |
Category: THT N channel transistors Description: Transistor: N-MOSFET; WMOS™ D1; unipolar; 900V; 4A; Idm: 16A; 63W Type of transistor: N-MOSFET Polarisation: unipolar Drain-source voltage: 900V Drain current: 4A Case: TO220-3 Gate-source voltage: ±30V On-state resistance: 1.85Ω Mounting: THT Kind of package: tube Kind of channel: enhancement Technology: WMOS™ D1 Gate charge: 34nC Pulsed drain current: 16A Power dissipation: 63W |
товару немає в наявності |
В кошику од. на суму грн. | |||||||||||||||
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WMK50N06TS | WAYON |
Category: THT N channel transistors Description: Transistor: N-MOSFET; unipolar; 60V; 50A; Idm: 200A; 69.4W; TO220-3 Type of transistor: N-MOSFET Polarisation: unipolar Drain-source voltage: 60V Drain current: 50A Pulsed drain current: 200A Power dissipation: 69.4W Case: TO220-3 Gate-source voltage: ±20V On-state resistance: 16mΩ Mounting: THT Gate charge: 46nC Kind of package: tube Kind of channel: enhancement |
на замовлення 338 шт: термін постачання 21-30 дні (днів) |
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WMK50N06TS | WAYON |
Category: THT N channel transistors Description: Transistor: N-MOSFET; unipolar; 60V; 50A; Idm: 200A; 69.4W; TO220-3 Type of transistor: N-MOSFET Polarisation: unipolar Drain-source voltage: 60V Drain current: 50A Pulsed drain current: 200A Power dissipation: 69.4W Case: TO220-3 Gate-source voltage: ±20V On-state resistance: 16mΩ Mounting: THT Gate charge: 46nC Kind of package: tube Kind of channel: enhancement кількість в упаковці: 1 шт |
на замовлення 338 шт: термін постачання 14-21 дні (днів) |
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| WMK50N20JN | WAYON |
Category: THT N channel transistorsDescription: Transistor: N-MOSFET; unipolar; 200V; 24A; Idm: 120A; 90W; TO220-3 Type of transistor: N-MOSFET Polarisation: unipolar Drain-source voltage: 200V Drain current: 24A Pulsed drain current: 120A Power dissipation: 90W Case: TO220-3 Gate-source voltage: ±20V On-state resistance: 35mΩ Mounting: THT Gate charge: 10nC Kind of package: tube Kind of channel: enhancement Reverse recovery time: 138ns |
товару немає в наявності |
В кошику од. на суму грн. | |||||||||||||||
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WMK53N60F2 | WAYON |
Category: THT N channel transistors Description: Transistor: N-MOSFET; WMOS™ F2; unipolar; 600V; 26A; Idm: 90A; 350W Type of transistor: N-MOSFET Technology: WMOS™ F2 Polarisation: unipolar Drain-source voltage: 600V Drain current: 26A Pulsed drain current: 90A Power dissipation: 350W Case: TO220-3 Gate-source voltage: ±30V On-state resistance: 78mΩ Mounting: THT Gate charge: 58nC Kind of package: tube Kind of channel: enhancement |
на замовлення 28 шт: термін постачання 21-30 дні (днів) |
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WMK53N60F2 | WAYON |
Category: THT N channel transistors Description: Transistor: N-MOSFET; WMOS™ F2; unipolar; 600V; 26A; Idm: 90A; 350W Type of transistor: N-MOSFET Technology: WMOS™ F2 Polarisation: unipolar Drain-source voltage: 600V Drain current: 26A Pulsed drain current: 90A Power dissipation: 350W Case: TO220-3 Gate-source voltage: ±30V On-state resistance: 78mΩ Mounting: THT Gate charge: 58nC Kind of package: tube Kind of channel: enhancement кількість в упаковці: 1 шт |
на замовлення 28 шт: термін постачання 14-21 дні (днів) |
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| WMK53N65F2 | WAYON | WMK53N65F2-CYG THT N channel transistors |
на замовлення 484 шт: термін постачання 14-21 дні (днів) |
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| WMK6N90D1 | WAYON |
Category: THT N channel transistors Description: Transistor: N-MOSFET; WMOS™ D1; unipolar; 900V; 6A; Idm: 24A; 100W Type of transistor: N-MOSFET Technology: WMOS™ D1 Polarisation: unipolar Drain-source voltage: 900V Drain current: 6A Pulsed drain current: 24A Power dissipation: 100W Case: TO220-3 Gate-source voltage: ±30V On-state resistance: 1.7Ω Mounting: THT Gate charge: 86.2nC Kind of package: tube Kind of channel: enhancement |
товару немає в наявності |
В кошику од. на суму грн. | |||||||||||||||
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WMK6N90D1B | WAYON |
Category: THT N channel transistors Description: Transistor: N-MOSFET; unipolar; 900V; 6A; TO220-3 Type of transistor: N-MOSFET Polarisation: unipolar Drain-source voltage: 900V Drain current: 6A Case: TO220-3 Gate-source voltage: ±30V On-state resistance: 2.3Ω Mounting: THT Kind of package: tube Kind of channel: enhancement |
на замовлення 125 шт: термін постачання 21-30 дні (днів) |
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WMK6N90D1B | WAYON |
Category: THT N channel transistors Description: Transistor: N-MOSFET; unipolar; 900V; 6A; TO220-3 Type of transistor: N-MOSFET Polarisation: unipolar Drain-source voltage: 900V Drain current: 6A Case: TO220-3 Gate-source voltage: ±30V On-state resistance: 2.3Ω Mounting: THT Kind of package: tube Kind of channel: enhancement кількість в упаковці: 1 шт |
на замовлення 125 шт: термін постачання 14-21 дні (днів) |
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| WMK75N03T1 | WAYON | WMK75N03T1-CYG THT N channel transistors |
на замовлення 78 шт: термін постачання 14-21 дні (днів) |
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| WMK7N65D1B | WAYON |
Category: THT N channel transistors Description: Transistor: N-MOSFET; WMOS™ D1; unipolar; 650V; 7A; Idm: 28A; 150W Type of transistor: N-MOSFET Polarisation: unipolar Drain-source voltage: 650V Drain current: 7A Pulsed drain current: 28A Power dissipation: 150W Case: TO220-3 Gate-source voltage: ±30V On-state resistance: 1.35Ω Mounting: THT Gate charge: 24.3nC Kind of package: tube Kind of channel: enhancement Technology: WMOS™ D1 |
товару немає в наявності |
В кошику од. на суму грн. | |||||||||||||||
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WMK80N04T1 | WAYON |
Category: THT N channel transistors Description: Transistor: N-MOSFET; unipolar; 40V; 80A; Idm: 320A; 56.8W; TO220-3 Type of transistor: N-MOSFET Polarisation: unipolar Drain-source voltage: 40V Drain current: 80A Pulsed drain current: 320A Power dissipation: 56.8W Case: TO220-3 Gate-source voltage: ±20V On-state resistance: 7mΩ Mounting: THT Gate charge: 36nC Kind of package: tube Kind of channel: enhancement |
на замовлення 215 шт: термін постачання 21-30 дні (днів) |
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WMK80N04T1 | WAYON |
Category: THT N channel transistors Description: Transistor: N-MOSFET; unipolar; 40V; 80A; Idm: 320A; 56.8W; TO220-3 Type of transistor: N-MOSFET Polarisation: unipolar Drain-source voltage: 40V Drain current: 80A Pulsed drain current: 320A Power dissipation: 56.8W Case: TO220-3 Gate-source voltage: ±20V On-state resistance: 7mΩ Mounting: THT Gate charge: 36nC Kind of package: tube Kind of channel: enhancement кількість в упаковці: 1 шт |
на замовлення 215 шт: термін постачання 14-21 дні (днів) |
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WMK80N08TS | WAYON |
Category: THT N channel transistors Description: Transistor: N-MOSFET; unipolar; 60V; 80A; Idm: 320A; 93W; TO220-3 Type of transistor: N-MOSFET Polarisation: unipolar Drain-source voltage: 60V Drain current: 80A Pulsed drain current: 320A Power dissipation: 93W Case: TO220-3 Gate-source voltage: ±20V On-state resistance: 8mΩ Mounting: THT Gate charge: 67nC Kind of package: tube Kind of channel: enhancement |
на замовлення 871 шт: термін постачання 21-30 дні (днів) |
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WMK80N08TS | WAYON |
Category: THT N channel transistors Description: Transistor: N-MOSFET; unipolar; 60V; 80A; Idm: 320A; 93W; TO220-3 Type of transistor: N-MOSFET Polarisation: unipolar Drain-source voltage: 60V Drain current: 80A Pulsed drain current: 320A Power dissipation: 93W Case: TO220-3 Gate-source voltage: ±20V On-state resistance: 8mΩ Mounting: THT Gate charge: 67nC Kind of package: tube Kind of channel: enhancement кількість в упаковці: 1 шт |
на замовлення 871 шт: термін постачання 14-21 дні (днів) |
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| WMK83N25JN | WAYON |
Category: THT N channel transistorsDescription: Transistor: N-MOSFET; unipolar; 250V; 31A; Idm: 145A; 92W; TO220-3 Type of transistor: N-MOSFET Polarisation: unipolar Drain-source voltage: 250V Drain current: 31A Pulsed drain current: 145A Power dissipation: 92W Case: TO220-3 Gate-source voltage: ±20V On-state resistance: 31mΩ Mounting: THT Gate charge: 10nC Kind of package: tube Kind of channel: enhancement Reverse recovery time: 180ns |
товару немає в наявності |
В кошику од. на суму грн. | |||||||||||||||
| WMK85N20JN | WAYON |
Category: THT N channel transistorsDescription: Transistor: N-MOSFET; unipolar; 200V; 50A; Idm: 240A; 180W; TO220-3 Type of transistor: N-MOSFET Polarisation: unipolar Drain-source voltage: 200V Drain current: 50A Pulsed drain current: 240A Power dissipation: 180W Case: TO220-3 Gate-source voltage: ±20V On-state resistance: 13.5mΩ Mounting: THT Kind of package: tube Kind of channel: enhancement Gate charge: 21nC Reverse recovery time: 160ns |
товару немає в наявності |
В кошику од. на суму грн. | |||||||||||||||
| WMK90N08TS | WAYON | WMK90N08TS-CYG THT N channel transistors |
на замовлення 82 шт: термін постачання 14-21 дні (днів) |
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| WMK93N25JN | WAYON |
Category: THT N channel transistorsDescription: Transistor: N-MOSFET; unipolar; 250V; 42A; Idm: 280A; 180W; TO220-3 Type of transistor: N-MOSFET Polarisation: unipolar Drain-source voltage: 250V Drain current: 42A Pulsed drain current: 280A Power dissipation: 180W Case: TO220-3 Gate-source voltage: ±20V On-state resistance: 17mΩ Mounting: THT Gate charge: 21nC Kind of package: tube Kind of channel: enhancement Reverse recovery time: 190ns |
товару немає в наявності |
В кошику од. на суму грн. | |||||||||||||||
| WMK9N50D1B | WAYON |
Category: THT N channel transistors Description: Transistor: N-MOSFET; WMOS™ D1; unipolar; 500V; 9A; Idm: 36A; 150W Type of transistor: N-MOSFET Technology: WMOS™ D1 Polarisation: unipolar Drain-source voltage: 500V Drain current: 9A Pulsed drain current: 36A Power dissipation: 150W Case: TO220-3 Gate-source voltage: ±30V On-state resistance: 0.68Ω Mounting: THT Gate charge: 72nC Kind of package: tube Kind of channel: enhancement |
товару немає в наявності |
В кошику од. на суму грн. | |||||||||||||||
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WML030N06HG4 | WAYON |
Category: THT N channel transistors Description: Transistor: N-MOSFET; unipolar; 60V; 78A; Idm: 312A; 35.7W; TO220FP Type of transistor: N-MOSFET Polarisation: unipolar Drain-source voltage: 60V Drain current: 78A Pulsed drain current: 312A Power dissipation: 35.7W Case: TO220FP Gate-source voltage: ±20V On-state resistance: 3.4mΩ Mounting: THT Gate charge: 68nC Kind of package: tube Kind of channel: enhancement |
на замовлення 1 шт: термін постачання 21-30 дні (днів) |
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WML030N06HG4 | WAYON |
Category: THT N channel transistors Description: Transistor: N-MOSFET; unipolar; 60V; 78A; Idm: 312A; 35.7W; TO220FP Type of transistor: N-MOSFET Polarisation: unipolar Drain-source voltage: 60V Drain current: 78A Pulsed drain current: 312A Power dissipation: 35.7W Case: TO220FP Gate-source voltage: ±20V On-state resistance: 3.4mΩ Mounting: THT Gate charge: 68nC Kind of package: tube Kind of channel: enhancement кількість в упаковці: 1 шт |
на замовлення 1 шт: термін постачання 14-21 дні (днів) |
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WML043N10HGS | WAYON |
Category: THT N channel transistors Description: Transistor: N-MOSFET; unipolar; 100V; 70A; Idm: 280A; 50W; TO220FP Type of transistor: N-MOSFET Polarisation: unipolar Drain-source voltage: 100V Drain current: 70A Pulsed drain current: 280A Power dissipation: 50W Case: TO220FP Gate-source voltage: ±20V On-state resistance: 5mΩ Mounting: THT Gate charge: 98.4nC Kind of package: tube Kind of channel: enhancement |
на замовлення 14 шт: термін постачання 21-30 дні (днів) |
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WML043N10HGS | WAYON |
Category: THT N channel transistors Description: Transistor: N-MOSFET; unipolar; 100V; 70A; Idm: 280A; 50W; TO220FP Type of transistor: N-MOSFET Polarisation: unipolar Drain-source voltage: 100V Drain current: 70A Pulsed drain current: 280A Power dissipation: 50W Case: TO220FP Gate-source voltage: ±20V On-state resistance: 5mΩ Mounting: THT Gate charge: 98.4nC Kind of package: tube Kind of channel: enhancement кількість в упаковці: 1 шт |
на замовлення 14 шт: термін постачання 14-21 дні (днів) |
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WML04N60C2 | WAYON |
Category: THT N channel transistors Description: Transistor: N-MOSFET; WMOS™ C2; unipolar; 600V; 3A; 20W; TO220FP Type of transistor: N-MOSFET Technology: WMOS™ C2 Polarisation: unipolar Drain-source voltage: 600V Drain current: 3A Power dissipation: 20W Case: TO220FP Gate-source voltage: ±30V On-state resistance: 1.9Ω Mounting: THT Kind of package: tube Kind of channel: enhancement |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||||||||
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WML04N60PC4 | WAYON |
Category: THT N channel transistors Description: Transistor: N-MOSFET; WMOS™ C4; unipolar; 600V; 1.6A; Idm: 7A; 18W Type of transistor: N-MOSFET Polarisation: unipolar Drain-source voltage: 600V Drain current: 1.6A Pulsed drain current: 7A Power dissipation: 18W Case: TO220FP Gate-source voltage: ±20V On-state resistance: 2.8Ω Mounting: THT Gate charge: 2.8nC Kind of package: tube Kind of channel: enhancement Technology: WMOS™ C4 |
на замовлення 973 шт: термін постачання 21-30 дні (днів) |
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WML04N60PC4 | WAYON |
Category: THT N channel transistors Description: Transistor: N-MOSFET; WMOS™ C4; unipolar; 600V; 1.6A; Idm: 7A; 18W Type of transistor: N-MOSFET Polarisation: unipolar Drain-source voltage: 600V Drain current: 1.6A Pulsed drain current: 7A Power dissipation: 18W Case: TO220FP Gate-source voltage: ±20V On-state resistance: 2.8Ω Mounting: THT Gate charge: 2.8nC Kind of package: tube Kind of channel: enhancement Technology: WMOS™ C4 кількість в упаковці: 1 шт |
на замовлення 973 шт: термін постачання 14-21 дні (днів) |
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| WML05N100C2 | WAYON |
Category: THT N channel transistors Description: Transistor: N-MOSFET; WMOS™ C2; unipolar; 1kV; 2A; Idm: 11A; 27W Type of transistor: N-MOSFET Technology: WMOS™ C2 Polarisation: unipolar Drain-source voltage: 1kV Drain current: 2A Pulsed drain current: 11A Power dissipation: 27W Case: TO220FP Gate-source voltage: ±30V On-state resistance: 3.5Ω Mounting: THT Gate charge: 12.6nC Kind of package: tube Kind of channel: enhancement |
товару немає в наявності |
В кошику од. на суму грн. | |||||||||||||||
| WML05N80M3 | WAYON | WML05N80M3-CYG THT N channel transistors |
на замовлення 191 шт: термін постачання 14-21 дні (днів) |
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| WML060N10HGS | WAYON | WML060N10HGS-CYG THT N channel transistors |
на замовлення 42 шт: термін постачання 14-21 дні (днів) |
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WML06N80M3 | WAYON |
Category: THT N channel transistorsDescription: Transistor: N-MOSFET; WMOS™ M3; unipolar; 800V; 5A; 23W; TO220FP Type of transistor: N-MOSFET Technology: WMOS™ M3 Polarisation: unipolar Drain-source voltage: 800V Drain current: 5A Power dissipation: 23W Case: TO220FP Gate-source voltage: ±30V On-state resistance: 2Ω Mounting: THT Kind of package: tube Kind of channel: enhancement |
на замовлення 135 шт: термін постачання 21-30 дні (днів) |
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WML06N80M3 | WAYON |
Category: THT N channel transistorsDescription: Transistor: N-MOSFET; WMOS™ M3; unipolar; 800V; 5A; 23W; TO220FP Type of transistor: N-MOSFET Technology: WMOS™ M3 Polarisation: unipolar Drain-source voltage: 800V Drain current: 5A Power dissipation: 23W Case: TO220FP Gate-source voltage: ±30V On-state resistance: 2Ω Mounting: THT Kind of package: tube Kind of channel: enhancement кількість в упаковці: 1 шт |
на замовлення 135 шт: термін постачання 14-21 дні (днів) |
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WML06N80M3 Код товару: 193245
Додати до обраних
Обраний товар
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Wayon |
Транзистори > Польові N-канальні Корпус: TO-220F Uds,V: 800 V Idd,A: 5 A Rds(on), Ohm: 1,8 Ohm Ciss, pF/Qg, nC: 300/10,7 Монтаж: THT |
товару немає в наявності
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В кошику од. на суму грн. | ||||||||||||||
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WML071N15HG2 | WAYON |
Category: THT N channel transistors Description: Transistor: N-MOSFET; unipolar; 150V; 120A; Idm: 480A; 272.7W Kind of package: tube Kind of channel: enhancement Mounting: THT Type of transistor: N-MOSFET Case: TO220FP Gate charge: 69nC On-state resistance: 7.1mΩ Gate-source voltage: ±20V Drain current: 120A Drain-source voltage: 150V Power dissipation: 272.7W Pulsed drain current: 480A Polarisation: unipolar |
на замовлення 190 шт: термін постачання 21-30 дні (днів) |
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WML071N15HG2 | WAYON |
Category: THT N channel transistors Description: Transistor: N-MOSFET; unipolar; 150V; 120A; Idm: 480A; 272.7W Kind of package: tube Kind of channel: enhancement Mounting: THT Type of transistor: N-MOSFET Case: TO220FP Gate charge: 69nC On-state resistance: 7.1mΩ Gate-source voltage: ±20V Drain current: 120A Drain-source voltage: 150V Power dissipation: 272.7W Pulsed drain current: 480A Polarisation: unipolar кількість в упаковці: 1 шт |
на замовлення 190 шт: термін постачання 14-21 дні (днів) |
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WML07N60C2 | WAYON |
Category: THT N channel transistorsDescription: Transistor: N-MOSFET; WMOS™ C2; unipolar; 600V; 5A; 23W; TO220FP Type of transistor: N-MOSFET Polarisation: unipolar Drain-source voltage: 600V Drain current: 5A Power dissipation: 23W Case: TO220FP Gate-source voltage: ±30V On-state resistance: 1.14Ω Mounting: THT Kind of package: tube Kind of channel: enhancement Technology: WMOS™ C2 |
на замовлення 428 шт: термін постачання 21-30 дні (днів) |
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WML07N60C2 | WAYON |
Category: THT N channel transistorsDescription: Transistor: N-MOSFET; WMOS™ C2; unipolar; 600V; 5A; 23W; TO220FP Type of transistor: N-MOSFET Polarisation: unipolar Drain-source voltage: 600V Drain current: 5A Power dissipation: 23W Case: TO220FP Gate-source voltage: ±30V On-state resistance: 1.14Ω Mounting: THT Kind of package: tube Kind of channel: enhancement Technology: WMOS™ C2 кількість в упаковці: 1 шт |
на замовлення 428 шт: термін постачання 14-21 дні (днів) |
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WML07N60C4 | WAYON |
Category: THT N channel transistors Description: Transistor: N-MOSFET; WMOS™ C4; unipolar; 600V; 2.8A; Idm: 9A; 23W Type of transistor: N-MOSFET Polarisation: unipolar Drain-source voltage: 600V Drain current: 2.8A Pulsed drain current: 9A Power dissipation: 23W Case: TO220FP Gate-source voltage: ±30V On-state resistance: 1.14Ω Mounting: THT Gate charge: 5.2nC Kind of package: tube Kind of channel: enhancement Technology: WMOS™ C4 |
на замовлення 464 шт: термін постачання 21-30 дні (днів) |
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WML07N60C4 | WAYON |
Category: THT N channel transistors Description: Transistor: N-MOSFET; WMOS™ C4; unipolar; 600V; 2.8A; Idm: 9A; 23W Type of transistor: N-MOSFET Polarisation: unipolar Drain-source voltage: 600V Drain current: 2.8A Pulsed drain current: 9A Power dissipation: 23W Case: TO220FP Gate-source voltage: ±30V On-state resistance: 1.14Ω Mounting: THT Gate charge: 5.2nC Kind of package: tube Kind of channel: enhancement Technology: WMOS™ C4 кількість в упаковці: 1 шт |
на замовлення 464 шт: термін постачання 14-21 дні (днів) |
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| WML07N65C4 | WAYON |
Category: THT N channel transistors Description: Transistor: N-MOSFET; WMOS™ C4; unipolar; 650V; 2.8A; Idm: 9A; 23W Type of transistor: N-MOSFET Technology: WMOS™ C4 Polarisation: unipolar Drain-source voltage: 650V Drain current: 2.8A Pulsed drain current: 9A Power dissipation: 23W Case: TO220FP Gate-source voltage: ±30V On-state resistance: 1.14Ω Mounting: THT Gate charge: 5.2nC Kind of package: tube Kind of channel: enhancement |
товару немає в наявності |
В кошику од. на суму грн. | |||||||||||||||
| WML07N70C4 | WAYON |
Category: THT N channel transistors Description: Transistor: N-MOSFET; WMOS™ C4; unipolar; 700V; 2.8A; Idm: 9A; 23W Type of transistor: N-MOSFET Technology: WMOS™ C4 Polarisation: unipolar Drain-source voltage: 700V Drain current: 2.8A Power dissipation: 23W Case: TO220FP Gate-source voltage: ±30V On-state resistance: 1.14Ω Mounting: THT Kind of package: tube Kind of channel: enhancement Gate charge: 5.2nC Pulsed drain current: 9A |
товару немає в наявності |
В кошику од. на суму грн. | |||||||||||||||
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WML080N10HG2 | WAYON |
Category: THT N channel transistors Description: Transistor: N-MOSFET; unipolar; 100V; 26A; Idm: 168A; 28.4W; TO220FP Type of transistor: N-MOSFET Polarisation: unipolar Drain-source voltage: 100V Drain current: 26A Pulsed drain current: 168A Power dissipation: 28.4W Case: TO220FP Gate-source voltage: ±20V On-state resistance: 8.8mΩ Mounting: THT Gate charge: 25.4nC Kind of package: tube Kind of channel: enhancement |
на замовлення 31 шт: термін постачання 21-30 дні (днів) |
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| WMK340N20HG2 |
Виробник: WAYON
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 200V; 50A; Idm: 200A; 173.6W
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 200V
Drain current: 50A
Pulsed drain current: 200A
Power dissipation: 173.6W
Case: TO220-3
Gate-source voltage: ±20V
On-state resistance: 34mΩ
Mounting: THT
Gate charge: 23nC
Kind of package: tube
Kind of channel: enhancement
кількість в упаковці: 1 шт
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 200V; 50A; Idm: 200A; 173.6W
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 200V
Drain current: 50A
Pulsed drain current: 200A
Power dissipation: 173.6W
Case: TO220-3
Gate-source voltage: ±20V
On-state resistance: 34mΩ
Mounting: THT
Gate charge: 23nC
Kind of package: tube
Kind of channel: enhancement
кількість в упаковці: 1 шт
на замовлення 89 шт:
термін постачання 14-21 дні (днів)| Кількість | Ціна |
|---|---|
| 3+ | 141.17 грн |
| 10+ | 129.18 грн |
| 50+ | 109.08 грн |
| 250+ | 97.60 грн |
| 1000+ | 94.73 грн |
| WMK36N60C4 |
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Виробник: WAYON
Category: THT N channel transistors
Description: Transistor: N-MOSFET; WMOS™ C4; unipolar; 600V; 20A; Idm: 100A; 277W
Type of transistor: N-MOSFET
Technology: WMOS™ C4
Polarisation: unipolar
Drain-source voltage: 600V
Drain current: 20A
Pulsed drain current: 100A
Power dissipation: 277W
Case: TO220-3
Gate-source voltage: ±30V
On-state resistance: 97mΩ
Mounting: THT
Gate charge: 46nC
Kind of package: tube
Kind of channel: enhancement
Category: THT N channel transistors
Description: Transistor: N-MOSFET; WMOS™ C4; unipolar; 600V; 20A; Idm: 100A; 277W
Type of transistor: N-MOSFET
Technology: WMOS™ C4
Polarisation: unipolar
Drain-source voltage: 600V
Drain current: 20A
Pulsed drain current: 100A
Power dissipation: 277W
Case: TO220-3
Gate-source voltage: ±30V
On-state resistance: 97mΩ
Mounting: THT
Gate charge: 46nC
Kind of package: tube
Kind of channel: enhancement
на замовлення 334 шт:
термін постачання 21-30 дні (днів)| Кількість | Ціна |
|---|---|
| 2+ | 298.83 грн |
| 3+ | 248.78 грн |
| 10+ | 208.91 грн |
| 25+ | 187.39 грн |
| 100+ | 173.83 грн |
| 250+ | 165.86 грн |
| WMK36N60C4 |
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Виробник: WAYON
Category: THT N channel transistors
Description: Transistor: N-MOSFET; WMOS™ C4; unipolar; 600V; 20A; Idm: 100A; 277W
Type of transistor: N-MOSFET
Technology: WMOS™ C4
Polarisation: unipolar
Drain-source voltage: 600V
Drain current: 20A
Pulsed drain current: 100A
Power dissipation: 277W
Case: TO220-3
Gate-source voltage: ±30V
On-state resistance: 97mΩ
Mounting: THT
Gate charge: 46nC
Kind of package: tube
Kind of channel: enhancement
кількість в упаковці: 1 шт
Category: THT N channel transistors
Description: Transistor: N-MOSFET; WMOS™ C4; unipolar; 600V; 20A; Idm: 100A; 277W
Type of transistor: N-MOSFET
Technology: WMOS™ C4
Polarisation: unipolar
Drain-source voltage: 600V
Drain current: 20A
Pulsed drain current: 100A
Power dissipation: 277W
Case: TO220-3
Gate-source voltage: ±30V
On-state resistance: 97mΩ
Mounting: THT
Gate charge: 46nC
Kind of package: tube
Kind of channel: enhancement
кількість в упаковці: 1 шт
на замовлення 334 шт:
термін постачання 14-21 дні (днів)| Кількість | Ціна |
|---|---|
| 1+ | 358.60 грн |
| 3+ | 310.02 грн |
| 10+ | 250.70 грн |
| 25+ | 224.86 грн |
| 100+ | 208.60 грн |
| 250+ | 199.03 грн |
| 500+ | 178.93 грн |
| WMK36N60F2 |
Виробник: WAYON
Category: THT N channel transistors
Description: Transistor: N-MOSFET; WMOS™ F2; unipolar; 600V; 20A; Idm: 100A; 277W
Type of transistor: N-MOSFET
Technology: WMOS™ F2
Polarisation: unipolar
Drain-source voltage: 600V
Drain current: 20A
Pulsed drain current: 100A
Power dissipation: 277W
Case: TO220-3
Gate-source voltage: ±30V
On-state resistance: 0.11Ω
Mounting: THT
Gate charge: 46nC
Kind of package: tube
Kind of channel: enhancement
Category: THT N channel transistors
Description: Transistor: N-MOSFET; WMOS™ F2; unipolar; 600V; 20A; Idm: 100A; 277W
Type of transistor: N-MOSFET
Technology: WMOS™ F2
Polarisation: unipolar
Drain-source voltage: 600V
Drain current: 20A
Pulsed drain current: 100A
Power dissipation: 277W
Case: TO220-3
Gate-source voltage: ±30V
On-state resistance: 0.11Ω
Mounting: THT
Gate charge: 46nC
Kind of package: tube
Kind of channel: enhancement
на замовлення 9 шт:
термін постачання 21-30 дні (днів)| Кількість | Ціна |
|---|---|
| 2+ | 275.65 грн |
| 3+ | 228.85 грн |
| WMK36N60F2 |
Виробник: WAYON
Category: THT N channel transistors
Description: Transistor: N-MOSFET; WMOS™ F2; unipolar; 600V; 20A; Idm: 100A; 277W
Type of transistor: N-MOSFET
Technology: WMOS™ F2
Polarisation: unipolar
Drain-source voltage: 600V
Drain current: 20A
Pulsed drain current: 100A
Power dissipation: 277W
Case: TO220-3
Gate-source voltage: ±30V
On-state resistance: 0.11Ω
Mounting: THT
Gate charge: 46nC
Kind of package: tube
Kind of channel: enhancement
кількість в упаковці: 1 шт
Category: THT N channel transistors
Description: Transistor: N-MOSFET; WMOS™ F2; unipolar; 600V; 20A; Idm: 100A; 277W
Type of transistor: N-MOSFET
Technology: WMOS™ F2
Polarisation: unipolar
Drain-source voltage: 600V
Drain current: 20A
Pulsed drain current: 100A
Power dissipation: 277W
Case: TO220-3
Gate-source voltage: ±30V
On-state resistance: 0.11Ω
Mounting: THT
Gate charge: 46nC
Kind of package: tube
Kind of channel: enhancement
кількість в упаковці: 1 шт
на замовлення 9 шт:
термін постачання 14-21 дні (днів)| Кількість | Ціна |
|---|---|
| 1+ | 330.78 грн |
| 3+ | 285.18 грн |
| 10+ | 230.60 грн |
| 25+ | 206.68 грн |
| 100+ | 192.33 грн |
| 250+ | 183.72 грн |
| 500+ | 172.23 грн |
| WMK36N65C4 |
Виробник: WAYON
Category: THT N channel transistors
Description: Transistor: N-MOSFET; WMOS™ C4; unipolar; 650V; 20A; Idm: 100A; 277W
Type of transistor: N-MOSFET
Technology: WMOS™ C4
Polarisation: unipolar
Drain-source voltage: 650V
Drain current: 20A
Pulsed drain current: 100A
Power dissipation: 277W
Case: TO220-3
Gate-source voltage: ±30V
On-state resistance: 97mΩ
Mounting: THT
Gate charge: 46nC
Kind of package: tube
Kind of channel: enhancement
Category: THT N channel transistors
Description: Transistor: N-MOSFET; WMOS™ C4; unipolar; 650V; 20A; Idm: 100A; 277W
Type of transistor: N-MOSFET
Technology: WMOS™ C4
Polarisation: unipolar
Drain-source voltage: 650V
Drain current: 20A
Pulsed drain current: 100A
Power dissipation: 277W
Case: TO220-3
Gate-source voltage: ±30V
On-state resistance: 97mΩ
Mounting: THT
Gate charge: 46nC
Kind of package: tube
Kind of channel: enhancement
на замовлення 208 шт:
термін постачання 21-30 дні (днів)| Кількість | Ціна |
|---|---|
| 3+ | 208.67 грн |
| 10+ | 179.41 грн |
| 50+ | 168.25 грн |
| 100+ | 150.71 грн |
| WMK36N65C4 |
Виробник: WAYON
Category: THT N channel transistors
Description: Transistor: N-MOSFET; WMOS™ C4; unipolar; 650V; 20A; Idm: 100A; 277W
Type of transistor: N-MOSFET
Technology: WMOS™ C4
Polarisation: unipolar
Drain-source voltage: 650V
Drain current: 20A
Pulsed drain current: 100A
Power dissipation: 277W
Case: TO220-3
Gate-source voltage: ±30V
On-state resistance: 97mΩ
Mounting: THT
Gate charge: 46nC
Kind of package: tube
Kind of channel: enhancement
кількість в упаковці: 1 шт
Category: THT N channel transistors
Description: Transistor: N-MOSFET; WMOS™ C4; unipolar; 650V; 20A; Idm: 100A; 277W
Type of transistor: N-MOSFET
Technology: WMOS™ C4
Polarisation: unipolar
Drain-source voltage: 650V
Drain current: 20A
Pulsed drain current: 100A
Power dissipation: 277W
Case: TO220-3
Gate-source voltage: ±30V
On-state resistance: 97mΩ
Mounting: THT
Gate charge: 46nC
Kind of package: tube
Kind of channel: enhancement
кількість в упаковці: 1 шт
на замовлення 208 шт:
термін постачання 14-21 дні (днів)| Кількість | Ціна |
|---|---|
| 2+ | 250.40 грн |
| 10+ | 223.57 грн |
| 50+ | 201.90 грн |
| 100+ | 180.85 грн |
| 250+ | 176.06 грн |
| WMK36N65F2 |
Виробник: WAYON
Category: THT N channel transistors
Description: Transistor: N-MOSFET; WMOS™ F2; unipolar; 650V; 20A; Idm: 100A; 277W
Type of transistor: N-MOSFET
Technology: WMOS™ F2
Polarisation: unipolar
Drain-source voltage: 650V
Drain current: 20A
Pulsed drain current: 100A
Power dissipation: 277W
Case: TO220-3
Gate-source voltage: ±30V
On-state resistance: 0.11Ω
Mounting: THT
Gate charge: 46nC
Kind of package: tube
Kind of channel: enhancement
Category: THT N channel transistors
Description: Transistor: N-MOSFET; WMOS™ F2; unipolar; 650V; 20A; Idm: 100A; 277W
Type of transistor: N-MOSFET
Technology: WMOS™ F2
Polarisation: unipolar
Drain-source voltage: 650V
Drain current: 20A
Pulsed drain current: 100A
Power dissipation: 277W
Case: TO220-3
Gate-source voltage: ±30V
On-state resistance: 0.11Ω
Mounting: THT
Gate charge: 46nC
Kind of package: tube
Kind of channel: enhancement
товару немає в наявності
В кошику
од. на суму грн.
| WMK38N60FD |
Виробник: WAYON
Category: THT N channel transistors
Description: Transistor: N-MOSFET; WMOS™ FD; unipolar; 600V; 38A; 277W; TO220-3
Type of transistor: N-MOSFET
Technology: WMOS™ FD
Polarisation: unipolar
Drain-source voltage: 600V
Drain current: 38A
Power dissipation: 277W
Case: TO220-3
Gate-source voltage: ±30V
On-state resistance: 0.115Ω
Mounting: THT
Kind of package: tube
Kind of channel: enhancement
Heatsink thickness: 1.2...1.45mm
Category: THT N channel transistors
Description: Transistor: N-MOSFET; WMOS™ FD; unipolar; 600V; 38A; 277W; TO220-3
Type of transistor: N-MOSFET
Technology: WMOS™ FD
Polarisation: unipolar
Drain-source voltage: 600V
Drain current: 38A
Power dissipation: 277W
Case: TO220-3
Gate-source voltage: ±30V
On-state resistance: 0.115Ω
Mounting: THT
Kind of package: tube
Kind of channel: enhancement
Heatsink thickness: 1.2...1.45mm
товару немає в наявності
В кошику
од. на суму грн.
| WMK38N65C2 |
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Виробник: WAYON
Category: THT N channel transistors
Description: Transistor: N-MOSFET; WMOS™ C2; unipolar; 650V; 38A; 277W; TO220-3
Type of transistor: N-MOSFET
Technology: WMOS™ C2
Polarisation: unipolar
Drain-source voltage: 650V
Drain current: 38A
Power dissipation: 277W
Case: TO220-3
Gate-source voltage: ±30V
On-state resistance: 99mΩ
Mounting: THT
Kind of package: tube
Kind of channel: enhancement
Heatsink thickness: 1.2...1.45mm
Category: THT N channel transistors
Description: Transistor: N-MOSFET; WMOS™ C2; unipolar; 650V; 38A; 277W; TO220-3
Type of transistor: N-MOSFET
Technology: WMOS™ C2
Polarisation: unipolar
Drain-source voltage: 650V
Drain current: 38A
Power dissipation: 277W
Case: TO220-3
Gate-source voltage: ±30V
On-state resistance: 99mΩ
Mounting: THT
Kind of package: tube
Kind of channel: enhancement
Heatsink thickness: 1.2...1.45mm
товару немає в наявності
В кошику
од. на суму грн.
| WMK38N65FD |
Виробник: WAYON
Category: THT N channel transistors
Description: Transistor: N-MOSFET; WMOS™ FD; unipolar; 650V; 38A; 277W; TO220-3
Type of transistor: N-MOSFET
Technology: WMOS™ FD
Polarisation: unipolar
Drain-source voltage: 650V
Drain current: 38A
Power dissipation: 277W
Case: TO220-3
Gate-source voltage: ±30V
On-state resistance: 0.115Ω
Mounting: THT
Kind of package: tube
Kind of channel: enhancement
Heatsink thickness: 1.2...1.45mm
Category: THT N channel transistors
Description: Transistor: N-MOSFET; WMOS™ FD; unipolar; 650V; 38A; 277W; TO220-3
Type of transistor: N-MOSFET
Technology: WMOS™ FD
Polarisation: unipolar
Drain-source voltage: 650V
Drain current: 38A
Power dissipation: 277W
Case: TO220-3
Gate-source voltage: ±30V
On-state resistance: 0.115Ω
Mounting: THT
Kind of package: tube
Kind of channel: enhancement
Heatsink thickness: 1.2...1.45mm
товару немає в наявності
В кошику
од. на суму грн.
| WMK3N150D1 |
Виробник: WAYON
Category: THT N channel transistors
Description: Transistor: N-MOSFET; WMOS™ D1; unipolar; 1.5kV; 3A; Idm: 12A; 125W
Case: TO220-3
Mounting: THT
Kind of package: tube
Type of transistor: N-MOSFET
Polarisation: unipolar
Gate charge: 40nC
On-state resistance: 5.7Ω
Drain current: 3A
Pulsed drain current: 12A
Gate-source voltage: ±30V
Power dissipation: 125W
Drain-source voltage: 1.5kV
Kind of channel: enhancement
Technology: WMOS™ D1
Category: THT N channel transistors
Description: Transistor: N-MOSFET; WMOS™ D1; unipolar; 1.5kV; 3A; Idm: 12A; 125W
Case: TO220-3
Mounting: THT
Kind of package: tube
Type of transistor: N-MOSFET
Polarisation: unipolar
Gate charge: 40nC
On-state resistance: 5.7Ω
Drain current: 3A
Pulsed drain current: 12A
Gate-source voltage: ±30V
Power dissipation: 125W
Drain-source voltage: 1.5kV
Kind of channel: enhancement
Technology: WMOS™ D1
на замовлення 171 шт:
термін постачання 21-30 дні (днів)| Кількість | Ціна |
|---|---|
| 6+ | 74.71 грн |
| 10+ | 62.99 грн |
| 50+ | 55.02 грн |
| WMK3N150D1 |
Виробник: WAYON
Category: THT N channel transistors
Description: Transistor: N-MOSFET; WMOS™ D1; unipolar; 1.5kV; 3A; Idm: 12A; 125W
Case: TO220-3
Mounting: THT
Kind of package: tube
Type of transistor: N-MOSFET
Polarisation: unipolar
Gate charge: 40nC
On-state resistance: 5.7Ω
Drain current: 3A
Pulsed drain current: 12A
Gate-source voltage: ±30V
Power dissipation: 125W
Drain-source voltage: 1.5kV
Kind of channel: enhancement
Technology: WMOS™ D1
кількість в упаковці: 1 шт
Category: THT N channel transistors
Description: Transistor: N-MOSFET; WMOS™ D1; unipolar; 1.5kV; 3A; Idm: 12A; 125W
Case: TO220-3
Mounting: THT
Kind of package: tube
Type of transistor: N-MOSFET
Polarisation: unipolar
Gate charge: 40nC
On-state resistance: 5.7Ω
Drain current: 3A
Pulsed drain current: 12A
Gate-source voltage: ±30V
Power dissipation: 125W
Drain-source voltage: 1.5kV
Kind of channel: enhancement
Technology: WMOS™ D1
кількість в упаковці: 1 шт
на замовлення 171 шт:
термін постачання 14-21 дні (днів)| Кількість | Ціна |
|---|---|
| 4+ | 89.65 грн |
| 10+ | 78.50 грн |
| 50+ | 66.02 грн |
| 250+ | 59.33 грн |
| 500+ | 57.41 грн |
| WMK40N20JN |
![]() |
Виробник: WAYON
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 200V; 21A; Idm: 110A; 89W; TO220-3
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 200V
Drain current: 21A
Pulsed drain current: 110A
Power dissipation: 89W
Case: TO220-3
Gate-source voltage: ±20V
On-state resistance: 46mΩ
Mounting: THT
Gate charge: 7.7nC
Kind of package: tube
Kind of channel: enhancement
Reverse recovery time: 141ns
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 200V; 21A; Idm: 110A; 89W; TO220-3
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 200V
Drain current: 21A
Pulsed drain current: 110A
Power dissipation: 89W
Case: TO220-3
Gate-source voltage: ±20V
On-state resistance: 46mΩ
Mounting: THT
Gate charge: 7.7nC
Kind of package: tube
Kind of channel: enhancement
Reverse recovery time: 141ns
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| WMK4N65D1B |
Виробник: WAYON
Category: THT N channel transistors
Description: Transistor: N-MOSFET; WMOS™ D1; unipolar; 650V; 4A; Idm: 16A; 112W
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 650V
Drain current: 4A
Pulsed drain current: 16A
Power dissipation: 112W
Case: TO220-3
Gate-source voltage: ±30V
On-state resistance: 2.2Ω
Mounting: THT
Gate charge: 14.5nC
Kind of package: tube
Kind of channel: enhancement
Technology: WMOS™ D1
Category: THT N channel transistors
Description: Transistor: N-MOSFET; WMOS™ D1; unipolar; 650V; 4A; Idm: 16A; 112W
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 650V
Drain current: 4A
Pulsed drain current: 16A
Power dissipation: 112W
Case: TO220-3
Gate-source voltage: ±30V
On-state resistance: 2.2Ω
Mounting: THT
Gate charge: 14.5nC
Kind of package: tube
Kind of channel: enhancement
Technology: WMOS™ D1
на замовлення 31 шт:
термін постачання 21-30 дні (днів)| Кількість | Ціна |
|---|---|
| 23+ | 19.15 грн |
| 30+ | 13.40 грн |
| WMK4N65D1B |
Виробник: WAYON
Category: THT N channel transistors
Description: Transistor: N-MOSFET; WMOS™ D1; unipolar; 650V; 4A; Idm: 16A; 112W
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 650V
Drain current: 4A
Pulsed drain current: 16A
Power dissipation: 112W
Case: TO220-3
Gate-source voltage: ±30V
On-state resistance: 2.2Ω
Mounting: THT
Gate charge: 14.5nC
Kind of package: tube
Kind of channel: enhancement
Technology: WMOS™ D1
кількість в упаковці: 1 шт
Category: THT N channel transistors
Description: Transistor: N-MOSFET; WMOS™ D1; unipolar; 650V; 4A; Idm: 16A; 112W
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 650V
Drain current: 4A
Pulsed drain current: 16A
Power dissipation: 112W
Case: TO220-3
Gate-source voltage: ±30V
On-state resistance: 2.2Ω
Mounting: THT
Gate charge: 14.5nC
Kind of package: tube
Kind of channel: enhancement
Technology: WMOS™ D1
кількість в упаковці: 1 шт
на замовлення 31 шт:
термін постачання 14-21 дні (днів)| Кількість | Ціна |
|---|---|
| 14+ | 22.98 грн |
| 18+ | 16.69 грн |
| 50+ | 14.26 грн |
| 250+ | 12.73 грн |
| 500+ | 12.44 грн |
| WMK4N90D1 |
Виробник: WAYON
Category: THT N channel transistors
Description: Transistor: N-MOSFET; WMOS™ D1; unipolar; 900V; 4A; Idm: 16A; 65W
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 900V
Drain current: 4A
Case: TO220-3
Gate-source voltage: ±30V
On-state resistance: 2.9Ω
Mounting: THT
Kind of package: tube
Kind of channel: enhancement
Technology: WMOS™ D1
Gate charge: 26nC
Pulsed drain current: 16A
Power dissipation: 65W
Category: THT N channel transistors
Description: Transistor: N-MOSFET; WMOS™ D1; unipolar; 900V; 4A; Idm: 16A; 65W
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 900V
Drain current: 4A
Case: TO220-3
Gate-source voltage: ±30V
On-state resistance: 2.9Ω
Mounting: THT
Kind of package: tube
Kind of channel: enhancement
Technology: WMOS™ D1
Gate charge: 26nC
Pulsed drain current: 16A
Power dissipation: 65W
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| WMK4N90D1B |
Виробник: WAYON
Category: THT N channel transistors
Description: Transistor: N-MOSFET; WMOS™ D1; unipolar; 900V; 4A; Idm: 16A; 63W
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 900V
Drain current: 4A
Case: TO220-3
Gate-source voltage: ±30V
On-state resistance: 1.85Ω
Mounting: THT
Kind of package: tube
Kind of channel: enhancement
Technology: WMOS™ D1
Gate charge: 34nC
Pulsed drain current: 16A
Power dissipation: 63W
Category: THT N channel transistors
Description: Transistor: N-MOSFET; WMOS™ D1; unipolar; 900V; 4A; Idm: 16A; 63W
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 900V
Drain current: 4A
Case: TO220-3
Gate-source voltage: ±30V
On-state resistance: 1.85Ω
Mounting: THT
Kind of package: tube
Kind of channel: enhancement
Technology: WMOS™ D1
Gate charge: 34nC
Pulsed drain current: 16A
Power dissipation: 63W
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од. на суму грн.
| WMK50N06TS |
Виробник: WAYON
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 60V; 50A; Idm: 200A; 69.4W; TO220-3
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 60V
Drain current: 50A
Pulsed drain current: 200A
Power dissipation: 69.4W
Case: TO220-3
Gate-source voltage: ±20V
On-state resistance: 16mΩ
Mounting: THT
Gate charge: 46nC
Kind of package: tube
Kind of channel: enhancement
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 60V; 50A; Idm: 200A; 69.4W; TO220-3
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 60V
Drain current: 50A
Pulsed drain current: 200A
Power dissipation: 69.4W
Case: TO220-3
Gate-source voltage: ±20V
On-state resistance: 16mΩ
Mounting: THT
Gate charge: 46nC
Kind of package: tube
Kind of channel: enhancement
на замовлення 338 шт:
термін постачання 21-30 дні (днів)| Кількість | Ціна |
|---|---|
| 10+ | 42.94 грн |
| 18+ | 22.73 грн |
| 50+ | 19.06 грн |
| 250+ | 17.06 грн |
| WMK50N06TS |
Виробник: WAYON
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 60V; 50A; Idm: 200A; 69.4W; TO220-3
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 60V
Drain current: 50A
Pulsed drain current: 200A
Power dissipation: 69.4W
Case: TO220-3
Gate-source voltage: ±20V
On-state resistance: 16mΩ
Mounting: THT
Gate charge: 46nC
Kind of package: tube
Kind of channel: enhancement
кількість в упаковці: 1 шт
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 60V; 50A; Idm: 200A; 69.4W; TO220-3
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 60V
Drain current: 50A
Pulsed drain current: 200A
Power dissipation: 69.4W
Case: TO220-3
Gate-source voltage: ±20V
On-state resistance: 16mΩ
Mounting: THT
Gate charge: 46nC
Kind of package: tube
Kind of channel: enhancement
кількість в упаковці: 1 шт
на замовлення 338 шт:
термін постачання 14-21 дні (днів)| Кількість | Ціна |
|---|---|
| 6+ | 51.52 грн |
| 11+ | 28.32 грн |
| 50+ | 22.87 грн |
| 250+ | 20.48 грн |
| 1000+ | 19.90 грн |
| WMK50N20JN |
![]() |
Виробник: WAYON
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 200V; 24A; Idm: 120A; 90W; TO220-3
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 200V
Drain current: 24A
Pulsed drain current: 120A
Power dissipation: 90W
Case: TO220-3
Gate-source voltage: ±20V
On-state resistance: 35mΩ
Mounting: THT
Gate charge: 10nC
Kind of package: tube
Kind of channel: enhancement
Reverse recovery time: 138ns
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 200V; 24A; Idm: 120A; 90W; TO220-3
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 200V
Drain current: 24A
Pulsed drain current: 120A
Power dissipation: 90W
Case: TO220-3
Gate-source voltage: ±20V
On-state resistance: 35mΩ
Mounting: THT
Gate charge: 10nC
Kind of package: tube
Kind of channel: enhancement
Reverse recovery time: 138ns
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од. на суму грн.
| WMK53N60F2 |
Виробник: WAYON
Category: THT N channel transistors
Description: Transistor: N-MOSFET; WMOS™ F2; unipolar; 600V; 26A; Idm: 90A; 350W
Type of transistor: N-MOSFET
Technology: WMOS™ F2
Polarisation: unipolar
Drain-source voltage: 600V
Drain current: 26A
Pulsed drain current: 90A
Power dissipation: 350W
Case: TO220-3
Gate-source voltage: ±30V
On-state resistance: 78mΩ
Mounting: THT
Gate charge: 58nC
Kind of package: tube
Kind of channel: enhancement
Category: THT N channel transistors
Description: Transistor: N-MOSFET; WMOS™ F2; unipolar; 600V; 26A; Idm: 90A; 350W
Type of transistor: N-MOSFET
Technology: WMOS™ F2
Polarisation: unipolar
Drain-source voltage: 600V
Drain current: 26A
Pulsed drain current: 90A
Power dissipation: 350W
Case: TO220-3
Gate-source voltage: ±30V
On-state resistance: 78mΩ
Mounting: THT
Gate charge: 58nC
Kind of package: tube
Kind of channel: enhancement
на замовлення 28 шт:
термін постачання 21-30 дні (днів)| Кількість | Ціна |
|---|---|
| 2+ | 349.50 грн |
| 3+ | 288.65 грн |
| 10+ | 242.40 грн |
| 25+ | 218.48 грн |
| WMK53N60F2 |
Виробник: WAYON
Category: THT N channel transistors
Description: Transistor: N-MOSFET; WMOS™ F2; unipolar; 600V; 26A; Idm: 90A; 350W
Type of transistor: N-MOSFET
Technology: WMOS™ F2
Polarisation: unipolar
Drain-source voltage: 600V
Drain current: 26A
Pulsed drain current: 90A
Power dissipation: 350W
Case: TO220-3
Gate-source voltage: ±30V
On-state resistance: 78mΩ
Mounting: THT
Gate charge: 58nC
Kind of package: tube
Kind of channel: enhancement
кількість в упаковці: 1 шт
Category: THT N channel transistors
Description: Transistor: N-MOSFET; WMOS™ F2; unipolar; 600V; 26A; Idm: 90A; 350W
Type of transistor: N-MOSFET
Technology: WMOS™ F2
Polarisation: unipolar
Drain-source voltage: 600V
Drain current: 26A
Pulsed drain current: 90A
Power dissipation: 350W
Case: TO220-3
Gate-source voltage: ±30V
On-state resistance: 78mΩ
Mounting: THT
Gate charge: 58nC
Kind of package: tube
Kind of channel: enhancement
кількість в упаковці: 1 шт
на замовлення 28 шт:
термін постачання 14-21 дні (днів)| Кількість | Ціна |
|---|---|
| 1+ | 419.40 грн |
| 3+ | 359.71 грн |
| 10+ | 290.89 грн |
| 25+ | 262.18 грн |
| 100+ | 242.09 грн |
| 250+ | 231.56 грн |
| 500+ | 219.12 грн |
| WMK53N65F2 |
Виробник: WAYON
WMK53N65F2-CYG THT N channel transistors
WMK53N65F2-CYG THT N channel transistors
на замовлення 484 шт:
термін постачання 14-21 дні (днів)| Кількість | Ціна |
|---|---|
| 1+ | 391.58 грн |
| 5+ | 264.09 грн |
| 12+ | 249.74 грн |
| WMK6N90D1 |
Виробник: WAYON
Category: THT N channel transistors
Description: Transistor: N-MOSFET; WMOS™ D1; unipolar; 900V; 6A; Idm: 24A; 100W
Type of transistor: N-MOSFET
Technology: WMOS™ D1
Polarisation: unipolar
Drain-source voltage: 900V
Drain current: 6A
Pulsed drain current: 24A
Power dissipation: 100W
Case: TO220-3
Gate-source voltage: ±30V
On-state resistance: 1.7Ω
Mounting: THT
Gate charge: 86.2nC
Kind of package: tube
Kind of channel: enhancement
Category: THT N channel transistors
Description: Transistor: N-MOSFET; WMOS™ D1; unipolar; 900V; 6A; Idm: 24A; 100W
Type of transistor: N-MOSFET
Technology: WMOS™ D1
Polarisation: unipolar
Drain-source voltage: 900V
Drain current: 6A
Pulsed drain current: 24A
Power dissipation: 100W
Case: TO220-3
Gate-source voltage: ±30V
On-state resistance: 1.7Ω
Mounting: THT
Gate charge: 86.2nC
Kind of package: tube
Kind of channel: enhancement
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| WMK6N90D1B |
Виробник: WAYON
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 900V; 6A; TO220-3
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 900V
Drain current: 6A
Case: TO220-3
Gate-source voltage: ±30V
On-state resistance: 2.3Ω
Mounting: THT
Kind of package: tube
Kind of channel: enhancement
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 900V; 6A; TO220-3
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 900V
Drain current: 6A
Case: TO220-3
Gate-source voltage: ±30V
On-state resistance: 2.3Ω
Mounting: THT
Kind of package: tube
Kind of channel: enhancement
на замовлення 125 шт:
термін постачання 21-30 дні (днів)| Кількість | Ціна |
|---|---|
| 9+ | 51.52 грн |
| 13+ | 32.21 грн |
| 50+ | 24.32 грн |
| WMK6N90D1B |
Виробник: WAYON
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 900V; 6A; TO220-3
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 900V
Drain current: 6A
Case: TO220-3
Gate-source voltage: ±30V
On-state resistance: 2.3Ω
Mounting: THT
Kind of package: tube
Kind of channel: enhancement
кількість в упаковці: 1 шт
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 900V; 6A; TO220-3
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 900V
Drain current: 6A
Case: TO220-3
Gate-source voltage: ±30V
On-state resistance: 2.3Ω
Mounting: THT
Kind of package: tube
Kind of channel: enhancement
кількість в упаковці: 1 шт
на замовлення 125 шт:
термін постачання 14-21 дні (днів)| Кількість | Ціна |
|---|---|
| 5+ | 61.83 грн |
| 10+ | 40.14 грн |
| 50+ | 29.18 грн |
| 250+ | 25.84 грн |
| 500+ | 24.21 грн |
| WMK75N03T1 |
Виробник: WAYON
WMK75N03T1-CYG THT N channel transistors
WMK75N03T1-CYG THT N channel transistors
на замовлення 78 шт:
термін постачання 14-21 дні (днів)| Кількість | Ціна |
|---|---|
| 6+ | 51.83 грн |
| 59+ | 19.23 грн |
| 162+ | 18.08 грн |
| WMK7N65D1B |
Виробник: WAYON
Category: THT N channel transistors
Description: Transistor: N-MOSFET; WMOS™ D1; unipolar; 650V; 7A; Idm: 28A; 150W
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 650V
Drain current: 7A
Pulsed drain current: 28A
Power dissipation: 150W
Case: TO220-3
Gate-source voltage: ±30V
On-state resistance: 1.35Ω
Mounting: THT
Gate charge: 24.3nC
Kind of package: tube
Kind of channel: enhancement
Technology: WMOS™ D1
Category: THT N channel transistors
Description: Transistor: N-MOSFET; WMOS™ D1; unipolar; 650V; 7A; Idm: 28A; 150W
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 650V
Drain current: 7A
Pulsed drain current: 28A
Power dissipation: 150W
Case: TO220-3
Gate-source voltage: ±30V
On-state resistance: 1.35Ω
Mounting: THT
Gate charge: 24.3nC
Kind of package: tube
Kind of channel: enhancement
Technology: WMOS™ D1
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| WMK80N04T1 |
Виробник: WAYON
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 40V; 80A; Idm: 320A; 56.8W; TO220-3
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 40V
Drain current: 80A
Pulsed drain current: 320A
Power dissipation: 56.8W
Case: TO220-3
Gate-source voltage: ±20V
On-state resistance: 7mΩ
Mounting: THT
Gate charge: 36nC
Kind of package: tube
Kind of channel: enhancement
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 40V; 80A; Idm: 320A; 56.8W; TO220-3
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 40V
Drain current: 80A
Pulsed drain current: 320A
Power dissipation: 56.8W
Case: TO220-3
Gate-source voltage: ±20V
On-state resistance: 7mΩ
Mounting: THT
Gate charge: 36nC
Kind of package: tube
Kind of channel: enhancement
на замовлення 215 шт:
термін постачання 21-30 дні (днів)| Кількість | Ціна |
|---|---|
| 11+ | 41.22 грн |
| 19+ | 21.93 грн |
| 50+ | 18.26 грн |
| WMK80N04T1 |
Виробник: WAYON
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 40V; 80A; Idm: 320A; 56.8W; TO220-3
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 40V
Drain current: 80A
Pulsed drain current: 320A
Power dissipation: 56.8W
Case: TO220-3
Gate-source voltage: ±20V
On-state resistance: 7mΩ
Mounting: THT
Gate charge: 36nC
Kind of package: tube
Kind of channel: enhancement
кількість в упаковці: 1 шт
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 40V; 80A; Idm: 320A; 56.8W; TO220-3
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 40V
Drain current: 80A
Pulsed drain current: 320A
Power dissipation: 56.8W
Case: TO220-3
Gate-source voltage: ±20V
On-state resistance: 7mΩ
Mounting: THT
Gate charge: 36nC
Kind of package: tube
Kind of channel: enhancement
кількість в упаковці: 1 шт
на замовлення 215 шт:
термін постачання 14-21 дні (днів)| Кількість | Ціна |
|---|---|
| 7+ | 49.46 грн |
| 11+ | 27.33 грн |
| 50+ | 21.91 грн |
| 250+ | 19.71 грн |
| 1000+ | 19.04 грн |
| WMK80N08TS |
Виробник: WAYON
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 60V; 80A; Idm: 320A; 93W; TO220-3
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 60V
Drain current: 80A
Pulsed drain current: 320A
Power dissipation: 93W
Case: TO220-3
Gate-source voltage: ±20V
On-state resistance: 8mΩ
Mounting: THT
Gate charge: 67nC
Kind of package: tube
Kind of channel: enhancement
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 60V; 80A; Idm: 320A; 93W; TO220-3
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 60V
Drain current: 80A
Pulsed drain current: 320A
Power dissipation: 93W
Case: TO220-3
Gate-source voltage: ±20V
On-state resistance: 8mΩ
Mounting: THT
Gate charge: 67nC
Kind of package: tube
Kind of channel: enhancement
на замовлення 871 шт:
термін постачання 21-30 дні (днів)| Кількість | Ціна |
|---|---|
| 7+ | 64.40 грн |
| 10+ | 46.25 грн |
| 28+ | 34.13 грн |
| 76+ | 32.21 грн |
| WMK80N08TS |
Виробник: WAYON
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 60V; 80A; Idm: 320A; 93W; TO220-3
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 60V
Drain current: 80A
Pulsed drain current: 320A
Power dissipation: 93W
Case: TO220-3
Gate-source voltage: ±20V
On-state resistance: 8mΩ
Mounting: THT
Gate charge: 67nC
Kind of package: tube
Kind of channel: enhancement
кількість в упаковці: 1 шт
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 60V; 80A; Idm: 320A; 93W; TO220-3
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 60V
Drain current: 80A
Pulsed drain current: 320A
Power dissipation: 93W
Case: TO220-3
Gate-source voltage: ±20V
On-state resistance: 8mΩ
Mounting: THT
Gate charge: 67nC
Kind of package: tube
Kind of channel: enhancement
кількість в упаковці: 1 шт
на замовлення 871 шт:
термін постачання 14-21 дні (днів)| Кількість | Ціна |
|---|---|
| 4+ | 77.28 грн |
| 10+ | 57.63 грн |
| 28+ | 40.95 грн |
| 76+ | 38.66 грн |
| 2000+ | 37.22 грн |
| WMK83N25JN |
![]() |
Виробник: WAYON
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 250V; 31A; Idm: 145A; 92W; TO220-3
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 250V
Drain current: 31A
Pulsed drain current: 145A
Power dissipation: 92W
Case: TO220-3
Gate-source voltage: ±20V
On-state resistance: 31mΩ
Mounting: THT
Gate charge: 10nC
Kind of package: tube
Kind of channel: enhancement
Reverse recovery time: 180ns
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 250V; 31A; Idm: 145A; 92W; TO220-3
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 250V
Drain current: 31A
Pulsed drain current: 145A
Power dissipation: 92W
Case: TO220-3
Gate-source voltage: ±20V
On-state resistance: 31mΩ
Mounting: THT
Gate charge: 10nC
Kind of package: tube
Kind of channel: enhancement
Reverse recovery time: 180ns
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В кошику
од. на суму грн.
| WMK85N20JN |
![]() |
Виробник: WAYON
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 200V; 50A; Idm: 240A; 180W; TO220-3
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 200V
Drain current: 50A
Pulsed drain current: 240A
Power dissipation: 180W
Case: TO220-3
Gate-source voltage: ±20V
On-state resistance: 13.5mΩ
Mounting: THT
Kind of package: tube
Kind of channel: enhancement
Gate charge: 21nC
Reverse recovery time: 160ns
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 200V; 50A; Idm: 240A; 180W; TO220-3
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 200V
Drain current: 50A
Pulsed drain current: 240A
Power dissipation: 180W
Case: TO220-3
Gate-source voltage: ±20V
On-state resistance: 13.5mΩ
Mounting: THT
Kind of package: tube
Kind of channel: enhancement
Gate charge: 21nC
Reverse recovery time: 160ns
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| WMK90N08TS |
Виробник: WAYON
WMK90N08TS-CYG THT N channel transistors
WMK90N08TS-CYG THT N channel transistors
на замовлення 82 шт:
термін постачання 14-21 дні (днів)| Кількість | Ціна |
|---|---|
| 5+ | 76.46 грн |
| 27+ | 41.91 грн |
| 75+ | 39.61 грн |
| WMK93N25JN |
![]() |
Виробник: WAYON
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 250V; 42A; Idm: 280A; 180W; TO220-3
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 250V
Drain current: 42A
Pulsed drain current: 280A
Power dissipation: 180W
Case: TO220-3
Gate-source voltage: ±20V
On-state resistance: 17mΩ
Mounting: THT
Gate charge: 21nC
Kind of package: tube
Kind of channel: enhancement
Reverse recovery time: 190ns
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 250V; 42A; Idm: 280A; 180W; TO220-3
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 250V
Drain current: 42A
Pulsed drain current: 280A
Power dissipation: 180W
Case: TO220-3
Gate-source voltage: ±20V
On-state resistance: 17mΩ
Mounting: THT
Gate charge: 21nC
Kind of package: tube
Kind of channel: enhancement
Reverse recovery time: 190ns
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В кошику
од. на суму грн.
| WMK9N50D1B |
Виробник: WAYON
Category: THT N channel transistors
Description: Transistor: N-MOSFET; WMOS™ D1; unipolar; 500V; 9A; Idm: 36A; 150W
Type of transistor: N-MOSFET
Technology: WMOS™ D1
Polarisation: unipolar
Drain-source voltage: 500V
Drain current: 9A
Pulsed drain current: 36A
Power dissipation: 150W
Case: TO220-3
Gate-source voltage: ±30V
On-state resistance: 0.68Ω
Mounting: THT
Gate charge: 72nC
Kind of package: tube
Kind of channel: enhancement
Category: THT N channel transistors
Description: Transistor: N-MOSFET; WMOS™ D1; unipolar; 500V; 9A; Idm: 36A; 150W
Type of transistor: N-MOSFET
Technology: WMOS™ D1
Polarisation: unipolar
Drain-source voltage: 500V
Drain current: 9A
Pulsed drain current: 36A
Power dissipation: 150W
Case: TO220-3
Gate-source voltage: ±30V
On-state resistance: 0.68Ω
Mounting: THT
Gate charge: 72nC
Kind of package: tube
Kind of channel: enhancement
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В кошику
од. на суму грн.
| WML030N06HG4 |
Виробник: WAYON
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 60V; 78A; Idm: 312A; 35.7W; TO220FP
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 60V
Drain current: 78A
Pulsed drain current: 312A
Power dissipation: 35.7W
Case: TO220FP
Gate-source voltage: ±20V
On-state resistance: 3.4mΩ
Mounting: THT
Gate charge: 68nC
Kind of package: tube
Kind of channel: enhancement
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 60V; 78A; Idm: 312A; 35.7W; TO220FP
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 60V
Drain current: 78A
Pulsed drain current: 312A
Power dissipation: 35.7W
Case: TO220FP
Gate-source voltage: ±20V
On-state resistance: 3.4mΩ
Mounting: THT
Gate charge: 68nC
Kind of package: tube
Kind of channel: enhancement
на замовлення 1 шт:
термін постачання 21-30 дні (днів)| Кількість | Ціна |
|---|---|
| 1+ | 429.36 грн |
| WML030N06HG4 |
Виробник: WAYON
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 60V; 78A; Idm: 312A; 35.7W; TO220FP
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 60V
Drain current: 78A
Pulsed drain current: 312A
Power dissipation: 35.7W
Case: TO220FP
Gate-source voltage: ±20V
On-state resistance: 3.4mΩ
Mounting: THT
Gate charge: 68nC
Kind of package: tube
Kind of channel: enhancement
кількість в упаковці: 1 шт
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 60V; 78A; Idm: 312A; 35.7W; TO220FP
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 60V
Drain current: 78A
Pulsed drain current: 312A
Power dissipation: 35.7W
Case: TO220FP
Gate-source voltage: ±20V
On-state resistance: 3.4mΩ
Mounting: THT
Gate charge: 68nC
Kind of package: tube
Kind of channel: enhancement
кількість в упаковці: 1 шт
на замовлення 1 шт:
термін постачання 14-21 дні (днів)| Кількість | Ціна |
|---|---|
| 1+ | 309.14 грн |
| 10+ | 67.57 грн |
| 50+ | 57.41 грн |
| 250+ | 51.38 грн |
| 1000+ | 50.33 грн |
| WML043N10HGS |
Виробник: WAYON
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 100V; 70A; Idm: 280A; 50W; TO220FP
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 100V
Drain current: 70A
Pulsed drain current: 280A
Power dissipation: 50W
Case: TO220FP
Gate-source voltage: ±20V
On-state resistance: 5mΩ
Mounting: THT
Gate charge: 98.4nC
Kind of package: tube
Kind of channel: enhancement
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 100V; 70A; Idm: 280A; 50W; TO220FP
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 100V
Drain current: 70A
Pulsed drain current: 280A
Power dissipation: 50W
Case: TO220FP
Gate-source voltage: ±20V
On-state resistance: 5mΩ
Mounting: THT
Gate charge: 98.4nC
Kind of package: tube
Kind of channel: enhancement
на замовлення 14 шт:
термін постачання 21-30 дні (днів)| Кількість | Ціна |
|---|---|
| 6+ | 72.13 грн |
| 10+ | 63.79 грн |
| WML043N10HGS |
Виробник: WAYON
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 100V; 70A; Idm: 280A; 50W; TO220FP
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 100V
Drain current: 70A
Pulsed drain current: 280A
Power dissipation: 50W
Case: TO220FP
Gate-source voltage: ±20V
On-state resistance: 5mΩ
Mounting: THT
Gate charge: 98.4nC
Kind of package: tube
Kind of channel: enhancement
кількість в упаковці: 1 шт
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 100V; 70A; Idm: 280A; 50W; TO220FP
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 100V
Drain current: 70A
Pulsed drain current: 280A
Power dissipation: 50W
Case: TO220FP
Gate-source voltage: ±20V
On-state resistance: 5mΩ
Mounting: THT
Gate charge: 98.4nC
Kind of package: tube
Kind of channel: enhancement
кількість в упаковці: 1 шт
на замовлення 14 шт:
термін постачання 14-21 дні (днів)| Кількість | Ціна |
|---|---|
| 4+ | 86.56 грн |
| 10+ | 79.49 грн |
| 50+ | 67.94 грн |
| 250+ | 62.20 грн |
| WML04N60C2 |
Виробник: WAYON
Category: THT N channel transistors
Description: Transistor: N-MOSFET; WMOS™ C2; unipolar; 600V; 3A; 20W; TO220FP
Type of transistor: N-MOSFET
Technology: WMOS™ C2
Polarisation: unipolar
Drain-source voltage: 600V
Drain current: 3A
Power dissipation: 20W
Case: TO220FP
Gate-source voltage: ±30V
On-state resistance: 1.9Ω
Mounting: THT
Kind of package: tube
Kind of channel: enhancement
Category: THT N channel transistors
Description: Transistor: N-MOSFET; WMOS™ C2; unipolar; 600V; 3A; 20W; TO220FP
Type of transistor: N-MOSFET
Technology: WMOS™ C2
Polarisation: unipolar
Drain-source voltage: 600V
Drain current: 3A
Power dissipation: 20W
Case: TO220FP
Gate-source voltage: ±30V
On-state resistance: 1.9Ω
Mounting: THT
Kind of package: tube
Kind of channel: enhancement
товару немає в наявності
В кошику
од. на суму грн.
| WML04N60PC4 |
Виробник: WAYON
Category: THT N channel transistors
Description: Transistor: N-MOSFET; WMOS™ C4; unipolar; 600V; 1.6A; Idm: 7A; 18W
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 600V
Drain current: 1.6A
Pulsed drain current: 7A
Power dissipation: 18W
Case: TO220FP
Gate-source voltage: ±20V
On-state resistance: 2.8Ω
Mounting: THT
Gate charge: 2.8nC
Kind of package: tube
Kind of channel: enhancement
Technology: WMOS™ C4
Category: THT N channel transistors
Description: Transistor: N-MOSFET; WMOS™ C4; unipolar; 600V; 1.6A; Idm: 7A; 18W
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 600V
Drain current: 1.6A
Pulsed drain current: 7A
Power dissipation: 18W
Case: TO220FP
Gate-source voltage: ±20V
On-state resistance: 2.8Ω
Mounting: THT
Gate charge: 2.8nC
Kind of package: tube
Kind of channel: enhancement
Technology: WMOS™ C4
на замовлення 973 шт:
термін постачання 21-30 дні (днів)| Кількість | Ціна |
|---|---|
| 8+ | 55.82 грн |
| 14+ | 29.98 грн |
| 25+ | 17.94 грн |
| 100+ | 15.39 грн |
| 500+ | 12.84 грн |
| WML04N60PC4 |
Виробник: WAYON
Category: THT N channel transistors
Description: Transistor: N-MOSFET; WMOS™ C4; unipolar; 600V; 1.6A; Idm: 7A; 18W
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 600V
Drain current: 1.6A
Pulsed drain current: 7A
Power dissipation: 18W
Case: TO220FP
Gate-source voltage: ±20V
On-state resistance: 2.8Ω
Mounting: THT
Gate charge: 2.8nC
Kind of package: tube
Kind of channel: enhancement
Technology: WMOS™ C4
кількість в упаковці: 1 шт
Category: THT N channel transistors
Description: Transistor: N-MOSFET; WMOS™ C4; unipolar; 600V; 1.6A; Idm: 7A; 18W
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 600V
Drain current: 1.6A
Pulsed drain current: 7A
Power dissipation: 18W
Case: TO220FP
Gate-source voltage: ±20V
On-state resistance: 2.8Ω
Mounting: THT
Gate charge: 2.8nC
Kind of package: tube
Kind of channel: enhancement
Technology: WMOS™ C4
кількість в упаковці: 1 шт
на замовлення 973 шт:
термін постачання 14-21 дні (днів)| Кількість | Ціна |
|---|---|
| 5+ | 66.98 грн |
| 8+ | 37.36 грн |
| 25+ | 21.53 грн |
| 100+ | 18.47 грн |
| 500+ | 15.41 грн |
| 1000+ | 14.64 грн |
| WML05N100C2 |
Виробник: WAYON
Category: THT N channel transistors
Description: Transistor: N-MOSFET; WMOS™ C2; unipolar; 1kV; 2A; Idm: 11A; 27W
Type of transistor: N-MOSFET
Technology: WMOS™ C2
Polarisation: unipolar
Drain-source voltage: 1kV
Drain current: 2A
Pulsed drain current: 11A
Power dissipation: 27W
Case: TO220FP
Gate-source voltage: ±30V
On-state resistance: 3.5Ω
Mounting: THT
Gate charge: 12.6nC
Kind of package: tube
Kind of channel: enhancement
Category: THT N channel transistors
Description: Transistor: N-MOSFET; WMOS™ C2; unipolar; 1kV; 2A; Idm: 11A; 27W
Type of transistor: N-MOSFET
Technology: WMOS™ C2
Polarisation: unipolar
Drain-source voltage: 1kV
Drain current: 2A
Pulsed drain current: 11A
Power dissipation: 27W
Case: TO220FP
Gate-source voltage: ±30V
On-state resistance: 3.5Ω
Mounting: THT
Gate charge: 12.6nC
Kind of package: tube
Kind of channel: enhancement
товару немає в наявності
В кошику
од. на суму грн.
| WML05N80M3 |
Виробник: WAYON
WML05N80M3-CYG THT N channel transistors
WML05N80M3-CYG THT N channel transistors
на замовлення 191 шт:
термін постачання 14-21 дні (днів)| Кількість | Ціна |
|---|---|
| 3+ | 108.20 грн |
| 29+ | 39.52 грн |
| 79+ | 37.41 грн |
| WML060N10HGS |
Виробник: WAYON
WML060N10HGS-CYG THT N channel transistors
WML060N10HGS-CYG THT N channel transistors
на замовлення 42 шт:
термін постачання 14-21 дні (днів)| Кількість | Ціна |
|---|---|
| 4+ | 88.21 грн |
| 21+ | 54.54 грн |
| 57+ | 51.57 грн |
| WML06N80M3 |
![]() |
Виробник: WAYON
Category: THT N channel transistors
Description: Transistor: N-MOSFET; WMOS™ M3; unipolar; 800V; 5A; 23W; TO220FP
Type of transistor: N-MOSFET
Technology: WMOS™ M3
Polarisation: unipolar
Drain-source voltage: 800V
Drain current: 5A
Power dissipation: 23W
Case: TO220FP
Gate-source voltage: ±30V
On-state resistance: 2Ω
Mounting: THT
Kind of package: tube
Kind of channel: enhancement
Category: THT N channel transistors
Description: Transistor: N-MOSFET; WMOS™ M3; unipolar; 800V; 5A; 23W; TO220FP
Type of transistor: N-MOSFET
Technology: WMOS™ M3
Polarisation: unipolar
Drain-source voltage: 800V
Drain current: 5A
Power dissipation: 23W
Case: TO220FP
Gate-source voltage: ±30V
On-state resistance: 2Ω
Mounting: THT
Kind of package: tube
Kind of channel: enhancement
на замовлення 135 шт:
термін постачання 21-30 дні (днів)| Кількість | Ціна |
|---|---|
| 8+ | 56.68 грн |
| 11+ | 39.07 грн |
| 25+ | 34.53 грн |
| 74+ | 33.33 грн |
| 100+ | 31.98 грн |
| WML06N80M3 |
![]() |
Виробник: WAYON
Category: THT N channel transistors
Description: Transistor: N-MOSFET; WMOS™ M3; unipolar; 800V; 5A; 23W; TO220FP
Type of transistor: N-MOSFET
Technology: WMOS™ M3
Polarisation: unipolar
Drain-source voltage: 800V
Drain current: 5A
Power dissipation: 23W
Case: TO220FP
Gate-source voltage: ±30V
On-state resistance: 2Ω
Mounting: THT
Kind of package: tube
Kind of channel: enhancement
кількість в упаковці: 1 шт
Category: THT N channel transistors
Description: Transistor: N-MOSFET; WMOS™ M3; unipolar; 800V; 5A; 23W; TO220FP
Type of transistor: N-MOSFET
Technology: WMOS™ M3
Polarisation: unipolar
Drain-source voltage: 800V
Drain current: 5A
Power dissipation: 23W
Case: TO220FP
Gate-source voltage: ±30V
On-state resistance: 2Ω
Mounting: THT
Kind of package: tube
Kind of channel: enhancement
кількість в упаковці: 1 шт
на замовлення 135 шт:
термін постачання 14-21 дні (днів)| Кількість | Ціна |
|---|---|
| 5+ | 68.01 грн |
| 7+ | 48.69 грн |
| 25+ | 41.43 грн |
| 74+ | 40.00 грн |
| 100+ | 38.37 грн |
| WML06N80M3 Код товару: 193245
Додати до обраних
Обраний товар
|
Виробник: Wayon
Транзистори > Польові N-канальні
Корпус: TO-220F
Uds,V: 800 V
Idd,A: 5 A
Rds(on), Ohm: 1,8 Ohm
Ciss, pF/Qg, nC: 300/10,7
Монтаж: THT
Транзистори > Польові N-канальні
Корпус: TO-220F
Uds,V: 800 V
Idd,A: 5 A
Rds(on), Ohm: 1,8 Ohm
Ciss, pF/Qg, nC: 300/10,7
Монтаж: THT
товару немає в наявності
В кошику
од. на суму грн.
| WML071N15HG2 |
Виробник: WAYON
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 150V; 120A; Idm: 480A; 272.7W
Kind of package: tube
Kind of channel: enhancement
Mounting: THT
Type of transistor: N-MOSFET
Case: TO220FP
Gate charge: 69nC
On-state resistance: 7.1mΩ
Gate-source voltage: ±20V
Drain current: 120A
Drain-source voltage: 150V
Power dissipation: 272.7W
Pulsed drain current: 480A
Polarisation: unipolar
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 150V; 120A; Idm: 480A; 272.7W
Kind of package: tube
Kind of channel: enhancement
Mounting: THT
Type of transistor: N-MOSFET
Case: TO220FP
Gate charge: 69nC
On-state resistance: 7.1mΩ
Gate-source voltage: ±20V
Drain current: 120A
Drain-source voltage: 150V
Power dissipation: 272.7W
Pulsed drain current: 480A
Polarisation: unipolar
на замовлення 190 шт:
термін постачання 21-30 дні (днів)| Кількість | Ціна |
|---|---|
| 3+ | 205.23 грн |
| 7+ | 140.34 грн |
| 19+ | 133.16 грн |
| WML071N15HG2 |
Виробник: WAYON
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 150V; 120A; Idm: 480A; 272.7W
Kind of package: tube
Kind of channel: enhancement
Mounting: THT
Type of transistor: N-MOSFET
Case: TO220FP
Gate charge: 69nC
On-state resistance: 7.1mΩ
Gate-source voltage: ±20V
Drain current: 120A
Drain-source voltage: 150V
Power dissipation: 272.7W
Pulsed drain current: 480A
Polarisation: unipolar
кількість в упаковці: 1 шт
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 150V; 120A; Idm: 480A; 272.7W
Kind of package: tube
Kind of channel: enhancement
Mounting: THT
Type of transistor: N-MOSFET
Case: TO220FP
Gate charge: 69nC
On-state resistance: 7.1mΩ
Gate-source voltage: ±20V
Drain current: 120A
Drain-source voltage: 150V
Power dissipation: 272.7W
Pulsed drain current: 480A
Polarisation: unipolar
кількість в упаковці: 1 шт
на замовлення 190 шт:
термін постачання 14-21 дні (днів)| Кількість | Ціна |
|---|---|
| 2+ | 246.28 грн |
| 7+ | 174.88 грн |
| 19+ | 159.80 грн |
| 2000+ | 153.10 грн |
| WML07N60C2 |
![]() |
Виробник: WAYON
Category: THT N channel transistors
Description: Transistor: N-MOSFET; WMOS™ C2; unipolar; 600V; 5A; 23W; TO220FP
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 600V
Drain current: 5A
Power dissipation: 23W
Case: TO220FP
Gate-source voltage: ±30V
On-state resistance: 1.14Ω
Mounting: THT
Kind of package: tube
Kind of channel: enhancement
Technology: WMOS™ C2
Category: THT N channel transistors
Description: Transistor: N-MOSFET; WMOS™ C2; unipolar; 600V; 5A; 23W; TO220FP
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 600V
Drain current: 5A
Power dissipation: 23W
Case: TO220FP
Gate-source voltage: ±30V
On-state resistance: 1.14Ω
Mounting: THT
Kind of package: tube
Kind of channel: enhancement
Technology: WMOS™ C2
на замовлення 428 шт:
термін постачання 21-30 дні (днів)| Кількість | Ціна |
|---|---|
| 8+ | 60.11 грн |
| 14+ | 29.66 грн |
| 25+ | 25.84 грн |
| 100+ | 24.96 грн |
| WML07N60C2 |
![]() |
Виробник: WAYON
Category: THT N channel transistors
Description: Transistor: N-MOSFET; WMOS™ C2; unipolar; 600V; 5A; 23W; TO220FP
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 600V
Drain current: 5A
Power dissipation: 23W
Case: TO220FP
Gate-source voltage: ±30V
On-state resistance: 1.14Ω
Mounting: THT
Kind of package: tube
Kind of channel: enhancement
Technology: WMOS™ C2
кількість в упаковці: 1 шт
Category: THT N channel transistors
Description: Transistor: N-MOSFET; WMOS™ C2; unipolar; 600V; 5A; 23W; TO220FP
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 600V
Drain current: 5A
Power dissipation: 23W
Case: TO220FP
Gate-source voltage: ±30V
On-state resistance: 1.14Ω
Mounting: THT
Kind of package: tube
Kind of channel: enhancement
Technology: WMOS™ C2
кількість в упаковці: 1 шт
на замовлення 428 шт:
термін постачання 14-21 дні (днів)| Кількість | Ціна |
|---|---|
| 5+ | 72.13 грн |
| 9+ | 36.96 грн |
| 25+ | 31.00 грн |
| 100+ | 29.95 грн |
| WML07N60C4 |
Виробник: WAYON
Category: THT N channel transistors
Description: Transistor: N-MOSFET; WMOS™ C4; unipolar; 600V; 2.8A; Idm: 9A; 23W
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 600V
Drain current: 2.8A
Pulsed drain current: 9A
Power dissipation: 23W
Case: TO220FP
Gate-source voltage: ±30V
On-state resistance: 1.14Ω
Mounting: THT
Gate charge: 5.2nC
Kind of package: tube
Kind of channel: enhancement
Technology: WMOS™ C4
Category: THT N channel transistors
Description: Transistor: N-MOSFET; WMOS™ C4; unipolar; 600V; 2.8A; Idm: 9A; 23W
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 600V
Drain current: 2.8A
Pulsed drain current: 9A
Power dissipation: 23W
Case: TO220FP
Gate-source voltage: ±30V
On-state resistance: 1.14Ω
Mounting: THT
Gate charge: 5.2nC
Kind of package: tube
Kind of channel: enhancement
Technology: WMOS™ C4
на замовлення 464 шт:
термін постачання 21-30 дні (днів)| Кількість | Ціна |
|---|---|
| 10+ | 39.87 грн |
| 12+ | 33.25 грн |
| 25+ | 29.90 грн |
| 100+ | 27.75 грн |
| 250+ | 26.47 грн |
| WML07N60C4 |
Виробник: WAYON
Category: THT N channel transistors
Description: Transistor: N-MOSFET; WMOS™ C4; unipolar; 600V; 2.8A; Idm: 9A; 23W
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 600V
Drain current: 2.8A
Pulsed drain current: 9A
Power dissipation: 23W
Case: TO220FP
Gate-source voltage: ±30V
On-state resistance: 1.14Ω
Mounting: THT
Gate charge: 5.2nC
Kind of package: tube
Kind of channel: enhancement
Technology: WMOS™ C4
кількість в упаковці: 1 шт
Category: THT N channel transistors
Description: Transistor: N-MOSFET; WMOS™ C4; unipolar; 600V; 2.8A; Idm: 9A; 23W
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 600V
Drain current: 2.8A
Pulsed drain current: 9A
Power dissipation: 23W
Case: TO220FP
Gate-source voltage: ±30V
On-state resistance: 1.14Ω
Mounting: THT
Gate charge: 5.2nC
Kind of package: tube
Kind of channel: enhancement
Technology: WMOS™ C4
кількість в упаковці: 1 шт
на замовлення 464 шт:
термін постачання 14-21 дні (днів)| Кількість | Ціна |
|---|---|
| 6+ | 49.68 грн |
| 10+ | 39.90 грн |
| 25+ | 35.88 грн |
| 100+ | 33.30 грн |
| 250+ | 31.77 грн |
| 500+ | 29.57 грн |
| WML07N65C4 |
Виробник: WAYON
Category: THT N channel transistors
Description: Transistor: N-MOSFET; WMOS™ C4; unipolar; 650V; 2.8A; Idm: 9A; 23W
Type of transistor: N-MOSFET
Technology: WMOS™ C4
Polarisation: unipolar
Drain-source voltage: 650V
Drain current: 2.8A
Pulsed drain current: 9A
Power dissipation: 23W
Case: TO220FP
Gate-source voltage: ±30V
On-state resistance: 1.14Ω
Mounting: THT
Gate charge: 5.2nC
Kind of package: tube
Kind of channel: enhancement
Category: THT N channel transistors
Description: Transistor: N-MOSFET; WMOS™ C4; unipolar; 650V; 2.8A; Idm: 9A; 23W
Type of transistor: N-MOSFET
Technology: WMOS™ C4
Polarisation: unipolar
Drain-source voltage: 650V
Drain current: 2.8A
Pulsed drain current: 9A
Power dissipation: 23W
Case: TO220FP
Gate-source voltage: ±30V
On-state resistance: 1.14Ω
Mounting: THT
Gate charge: 5.2nC
Kind of package: tube
Kind of channel: enhancement
товару немає в наявності
В кошику
од. на суму грн.
| WML07N70C4 |
Виробник: WAYON
Category: THT N channel transistors
Description: Transistor: N-MOSFET; WMOS™ C4; unipolar; 700V; 2.8A; Idm: 9A; 23W
Type of transistor: N-MOSFET
Technology: WMOS™ C4
Polarisation: unipolar
Drain-source voltage: 700V
Drain current: 2.8A
Power dissipation: 23W
Case: TO220FP
Gate-source voltage: ±30V
On-state resistance: 1.14Ω
Mounting: THT
Kind of package: tube
Kind of channel: enhancement
Gate charge: 5.2nC
Pulsed drain current: 9A
Category: THT N channel transistors
Description: Transistor: N-MOSFET; WMOS™ C4; unipolar; 700V; 2.8A; Idm: 9A; 23W
Type of transistor: N-MOSFET
Technology: WMOS™ C4
Polarisation: unipolar
Drain-source voltage: 700V
Drain current: 2.8A
Power dissipation: 23W
Case: TO220FP
Gate-source voltage: ±30V
On-state resistance: 1.14Ω
Mounting: THT
Kind of package: tube
Kind of channel: enhancement
Gate charge: 5.2nC
Pulsed drain current: 9A
товару немає в наявності
В кошику
од. на суму грн.
| WML080N10HG2 |
Виробник: WAYON
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 100V; 26A; Idm: 168A; 28.4W; TO220FP
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 100V
Drain current: 26A
Pulsed drain current: 168A
Power dissipation: 28.4W
Case: TO220FP
Gate-source voltage: ±20V
On-state resistance: 8.8mΩ
Mounting: THT
Gate charge: 25.4nC
Kind of package: tube
Kind of channel: enhancement
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 100V; 26A; Idm: 168A; 28.4W; TO220FP
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 100V
Drain current: 26A
Pulsed drain current: 168A
Power dissipation: 28.4W
Case: TO220FP
Gate-source voltage: ±20V
On-state resistance: 8.8mΩ
Mounting: THT
Gate charge: 25.4nC
Kind of package: tube
Kind of channel: enhancement
на замовлення 31 шт:
термін постачання 21-30 дні (днів)| Кількість | Ціна |
|---|---|
| 9+ | 51.52 грн |
| 11+ | 39.63 грн |




















