| Фото | Назва | Виробник | Інформація | Доступність | Ціна без ПДВ | ||||||||||
|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|
|
WML6N90D1B | WAYON |
Category: THT N channel transistors Description: Transistor: N-MOSFET; unipolar; 900V; 6A; TO220FP Type of transistor: N-MOSFET Polarisation: unipolar Drain-source voltage: 900V Drain current: 6A Case: TO220FP Gate-source voltage: ±30V On-state resistance: 2.3Ω Mounting: THT Kind of package: tube Kind of channel: enhancement |
на замовлення 676 шт: термін постачання 14-30 дні (днів) |
|
||||||||||
|
WML7N65D1B | WAYON |
Category: THT N channel transistors Description: Transistor: N-MOSFET; WMOS™ D1; unipolar; 650V; 7A; Idm: 28A; 63W Type of transistor: N-MOSFET Polarisation: unipolar Drain-source voltage: 650V Drain current: 7A Case: TO220FP Gate-source voltage: ±30V On-state resistance: 1.35Ω Mounting: THT Gate charge: 24.3nC Kind of channel: enhancement Pulsed drain current: 28A Power dissipation: 63W Technology: WMOS™ D1 Kind of package: tube |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||||
|
WML7N80D1 | WAYON |
Category: THT N channel transistors Description: Transistor: N-MOSFET; unipolar; 800V; 7A; Idm: 28A; 52W; TO220FP Type of transistor: N-MOSFET Polarisation: unipolar Drain-source voltage: 800V Drain current: 7A Power dissipation: 52W Case: TO220FP Gate-source voltage: ±30V On-state resistance: 1.4Ω Mounting: THT Kind of package: tube Kind of channel: enhancement Pulsed drain current: 28A Gate charge: 23nC |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||||
| WML80R1K0S | WAYON |
Category: THT N channel transistors Description: Transistor: N-MOSFET; WMOS™ S; unipolar; 800V; 3.6A; Idm: 22A; 29W Type of transistor: N-MOSFET Technology: WMOS™ S Polarisation: unipolar Drain-source voltage: 800V Drain current: 3.6A Pulsed drain current: 22A Power dissipation: 29W Case: TO220FP Gate-source voltage: ±30V On-state resistance: 1.05Ω Mounting: THT Gate charge: 13.2nC Kind of package: tube Kind of channel: enhancement |
товару немає в наявності |
В кошику од. на суму грн. | |||||||||||
| WML80R350S | WAYON |
Category: THT N channel transistors Description: Transistor: N-MOSFET; WMOS™ S; unipolar; 800V; 8.4A; Idm: 56A; 34W Type of transistor: N-MOSFET Technology: WMOS™ S Polarisation: unipolar Drain-source voltage: 800V Drain current: 8.4A Pulsed drain current: 56A Power dissipation: 34W Case: TO220FP Gate-source voltage: ±30V On-state resistance: 0.33Ω Mounting: THT Gate charge: 31nC Kind of package: tube Kind of channel: enhancement |
товару немає в наявності |
В кошику од. на суму грн. | |||||||||||
| WML80R480S | WAYON |
Category: THT N channel transistors Description: Transistor: N-MOSFET; WMOS™ S; unipolar; 800V; 7.2A; Idm: 48A; 31W Type of transistor: N-MOSFET Technology: WMOS™ S Polarisation: unipolar Drain-source voltage: 800V Drain current: 7.2A Pulsed drain current: 48A Power dissipation: 31W Case: TO220FP Gate-source voltage: ±30V On-state resistance: 0.48Ω Mounting: THT Gate charge: 25nC Kind of package: tube Kind of channel: enhancement |
товару немає в наявності |
В кошику од. на суму грн. | |||||||||||
| WML80R720S | WAYON |
Category: THT N channel transistors Description: Transistor: N-MOSFET; WMOS™ S; unipolar; 800V; 4.2A; Idm: 24A; 31W Type of transistor: N-MOSFET Technology: WMOS™ S Polarisation: unipolar Drain-source voltage: 800V Drain current: 4.2A Pulsed drain current: 24A Power dissipation: 31W Case: TO220FP Gate-source voltage: ±30V On-state resistance: 0.8Ω Mounting: THT Gate charge: 16nC Kind of package: tube Kind of channel: enhancement |
товару немає в наявності |
В кошику од. на суму грн. | |||||||||||
|
WML90R260S | WAYON |
Category: THT N channel transistors Description: Transistor: N-MOSFET; WMOS™ S; unipolar; 900V; 10A; Idm: 50A; 34W Mounting: THT Pulsed drain current: 50A Power dissipation: 34W Gate charge: 39.5nC Polarisation: unipolar Technology: WMOS™ S Drain current: 10A Kind of channel: enhancement Drain-source voltage: 900V Type of transistor: N-MOSFET Gate-source voltage: ±30V Kind of package: tube Case: TO220FP On-state resistance: 0.26Ω |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||||
| WML98N20JN | WAYON |
Category: THT N channel transistorsDescription: Transistor: N-MOSFET; unipolar; 200V; 87A; Idm: 435A; 35W; TO220FP Type of transistor: N-MOSFET Polarisation: unipolar Drain-source voltage: 200V Drain current: 87A Pulsed drain current: 435A Power dissipation: 35W Case: TO220FP Gate-source voltage: ±20V On-state resistance: 6.6mΩ Mounting: THT Gate charge: 121nC Kind of package: tube Kind of channel: enhancement Reverse recovery time: 160ns |
товару немає в наявності |
Мінімальне замовлення: 1000 шт В кошику од. на суму грн. | |||||||||||
|
WML9N50D1B | WAYON |
Category: THT N channel transistorsDescription: Transistor: N-MOSFET; WMOS™ D1; unipolar; 500V; 9A; Idm: 36A; 45W Type of transistor: N-MOSFET Polarisation: unipolar Drain-source voltage: 500V Drain current: 9A Case: TO220FP Gate-source voltage: ±30V On-state resistance: 0.68Ω Mounting: THT Gate charge: 72nC Kind of channel: enhancement Pulsed drain current: 36A Power dissipation: 45W Technology: WMOS™ D1 Kind of package: tube |
товару немає в наявності |
Мінімальне замовлення: 3 шт В кошику од. на суму грн. | ||||||||||
|
WMLL010N04LG4 | WAYON |
Category: SMD N channel transistorsDescription: Transistor: N-MOSFET; unipolar; 40V; 378A; Idm: 1512A; 333.3W; TOLL Type of transistor: N-MOSFET Polarisation: unipolar Drain-source voltage: 40V Drain current: 378A Pulsed drain current: 1512A Power dissipation: 333.3W Case: TOLL Gate-source voltage: ±20V On-state resistance: 1.3mΩ Mounting: SMD Kind of package: reel; tape Kind of channel: enhancement Gate charge: 118nC |
на замовлення 107 шт: термін постачання 14-30 дні (днів) |
|
||||||||||
|
WMLL013N08HGS | WAYON |
Category: SMD N channel transistors Description: Transistor: N-MOSFET; unipolar; 80V; 400A; Idm: 1600A; 468.8W; TOLL Type of transistor: N-MOSFET Polarisation: unipolar Drain-source voltage: 80V Drain current: 400A Pulsed drain current: 1.6kA Power dissipation: 468.8W Case: TOLL Gate-source voltage: ±20V On-state resistance: 1.35mΩ Mounting: SMD Gate charge: 243.6nC Kind of package: reel; tape Kind of channel: enhancement |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||||
|
WMLL014N06HG4 | WAYON |
Category: SMD N channel transistors Description: Transistor: N-MOSFET; unipolar; 60V; 378A; Idm: 1512A; 454.5W; TOLL Type of transistor: N-MOSFET Polarisation: unipolar Drain-source voltage: 60V Drain current: 378A Power dissipation: 454.5W Case: TOLL Mounting: SMD Kind of package: reel; tape Kind of channel: enhancement On-state resistance: 1.55mΩ Pulsed drain current: 1512A Gate charge: 102nC Gate-source voltage: ±20V |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||||
|
WMLL017N10HGS | WAYON |
Category: SMD N channel transistors Description: Transistor: N-MOSFET; unipolar; 60V; 378A; Idm: 1512A; 454.5W; TOLL Type of transistor: N-MOSFET Polarisation: unipolar Drain-source voltage: 60V Drain current: 378A Pulsed drain current: 1512A Power dissipation: 454.5W Case: TOLL Gate-source voltage: ±20V On-state resistance: 1.55mΩ Mounting: SMD Gate charge: 102nC Kind of package: reel; tape Kind of channel: enhancement |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||||
|
WMLL020N08HGS | WAYON |
Category: SMD N channel transistors Description: Transistor: N-MOSFET; unipolar; 80V; 310A; Idm: 1240A; 347.2W; TOLL Type of transistor: N-MOSFET Polarisation: unipolar Drain-source voltage: 80V Drain current: 310A Pulsed drain current: 1240A Power dissipation: 347.2W Case: TOLL Gate-source voltage: ±20V On-state resistance: 2mΩ Mounting: SMD Gate charge: 0.14µC Kind of package: reel; tape Kind of channel: enhancement |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||||
|
WMLL020N10HG4 | WAYON |
Category: SMD N channel transistors Description: Transistor: N-MOSFET; unipolar; 100V; 304A; Idm: 1216A; 468.7W; TOLL Type of transistor: N-MOSFET Polarisation: unipolar Drain-source voltage: 100V Drain current: 304A Pulsed drain current: 1216A Power dissipation: 468.7W Case: TOLL Gate-source voltage: ±20V On-state resistance: 2mΩ Mounting: SMD Gate charge: 125nC Kind of package: reel; tape Kind of channel: enhancement |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||||
|
WMLL020NV8HGS | WAYON |
Category: SMD N channel transistors Description: Transistor: N-MOSFET; unipolar; 85V; 190A; Idm: 1200A; 347.2W; TOLL Type of transistor: N-MOSFET Polarisation: unipolar Drain-source voltage: 85V Drain current: 190A Pulsed drain current: 1.2kA Power dissipation: 347.2W Case: TOLL Gate-source voltage: ±20V On-state resistance: 2.2mΩ Mounting: SMD Gate charge: 142nC Kind of package: reel; tape Kind of channel: enhancement |
на замовлення 40 шт: термін постачання 14-30 дні (днів) |
|
||||||||||
|
WMLL025N10HGS | WAYON |
Category: SMD N channel transistors Description: Transistor: N-MOSFET; unipolar; 100V; 260A; Idm: 1040A; 347.2W; TOLL Type of transistor: N-MOSFET Polarisation: unipolar Drain-source voltage: 100V Drain current: 260A Power dissipation: 347.2W Case: TOLL Gate-source voltage: ±20V On-state resistance: 2.6mΩ Mounting: SMD Kind of channel: enhancement Pulsed drain current: 1040A Gate charge: 150nC Kind of package: reel; tape |
на замовлення 89 шт: термін постачання 14-30 дні (днів) |
|
||||||||||
|
WMLL030N12HGS | WAYON |
Category: SMD N channel transistors Description: Transistor: N-MOSFET; unipolar; 120V; 225A; Idm: 900A; 365.8W; TOLL Type of transistor: N-MOSFET Polarisation: unipolar Drain-source voltage: 120V Drain current: 225A Pulsed drain current: 900A Power dissipation: 365.8W Case: TOLL Gate-source voltage: ±20V On-state resistance: 3.3mΩ Mounting: SMD Gate charge: 144nC Kind of package: reel; tape Kind of channel: enhancement |
на замовлення 165 шт: термін постачання 14-30 дні (днів) |
|
||||||||||
|
WMLL040N15HG2 | WAYON |
Category: SMD N channel transistors Description: Transistor: N-MOSFET; unipolar; 150V; 160A; Idm: 908A; 500W; TOLL Type of transistor: N-MOSFET Polarisation: unipolar Drain-source voltage: 150V Drain current: 160A Pulsed drain current: 908A Power dissipation: 500W Case: TOLL Gate-source voltage: ±20V On-state resistance: 4.2mΩ Mounting: SMD Gate charge: 74.3nC Kind of package: reel; tape Kind of channel: enhancement |
на замовлення 19 шт: термін постачання 14-30 дні (днів) |
|
||||||||||
|
WMLL065N15HG2 | WAYON |
Category: SMD N channel transistors Description: Transistor: N-MOSFET; unipolar; 150V; 172A; Idm: 688A; 394.7W; TOLL Type of transistor: N-MOSFET Polarisation: unipolar Drain-source voltage: 150V Drain current: 172A Power dissipation: 394.7W Case: TOLL Gate-source voltage: ±20V On-state resistance: 6mΩ Mounting: SMD Kind of channel: enhancement Pulsed drain current: 688A Gate charge: 85nC Kind of package: reel; tape |
товару немає в наявності |
Мінімальне замовлення: 2000 шт В кошику од. на суму грн. | ||||||||||
|
WMLL099N20HG2 | WAYON |
Category: SMD N channel transistors Description: Transistor: N-MOSFET; unipolar; 200V; 90A; Idm: 568A; 500W; TOLL Type of transistor: N-MOSFET Polarisation: unipolar Drain-source voltage: 200V Drain current: 90A Pulsed drain current: 568A Power dissipation: 500W Case: TOLL Gate-source voltage: ±20V On-state resistance: 10.5mΩ Mounting: SMD Gate charge: 68.5nC Kind of package: reel; tape Kind of channel: enhancement |
на замовлення 30 шт: термін постачання 14-30 дні (днів) |
|
||||||||||
| WMLL130N20JN | WAYON |
Category: SMD N channel transistorsDescription: Transistor: N-MOSFET; unipolar; 200V; 117A; Idm: 620A; 416W; TOLL Drain-source voltage: 200V Drain current: 117A Case: TOLL Polarisation: unipolar On-state resistance: 5.2mΩ Pulsed drain current: 620A Power dissipation: 416W Kind of channel: enhancement Gate charge: 188nC Reverse recovery time: 196ns Gate-source voltage: ±20V Type of transistor: N-MOSFET Kind of package: reel; tape Mounting: SMD |
товару немає в наявності |
Мінімальне замовлення: 2000 шт В кошику од. на суму грн. | |||||||||||
| WMLL130N25JN | WAYON |
Category: SMD N channel transistorsDescription: Transistor: N-MOSFET; unipolar; 250V; 96A; Idm: 435A; 312W; TOLL Type of transistor: N-MOSFET Polarisation: unipolar Drain-source voltage: 250V Drain current: 96A Pulsed drain current: 435A Power dissipation: 312W Case: TOLL Gate-source voltage: ±20V On-state resistance: 8.4mΩ Mounting: SMD Gate charge: 121nC Kind of package: reel; tape Kind of channel: enhancement Reverse recovery time: 195ns |
товару немає в наявності |
Мінімальне замовлення: 2000 шт В кошику од. на суму грн. | |||||||||||
| WMLL40N20JN | WAYON |
Category: SMD N channel transistorsDescription: Transistor: N-MOSFET; unipolar; 200V; 21A; Idm: 110A; 89W; TOLL Type of transistor: N-MOSFET Polarisation: unipolar Drain-source voltage: 200V Drain current: 21A Pulsed drain current: 110A Power dissipation: 89W Case: TOLL Gate-source voltage: ±20V On-state resistance: 46mΩ Mounting: SMD Gate charge: 7.7nC Kind of package: reel; tape Kind of channel: enhancement Reverse recovery time: 141ns |
товару немає в наявності |
Мінімальне замовлення: 2000 шт В кошику од. на суму грн. | |||||||||||
| WMLL50N20JN | WAYON |
Category: SMD N channel transistorsDescription: Transistor: N-MOSFET; unipolar; 200V; 24A; Idm: 120A; 90W; TOLL Type of transistor: N-MOSFET Polarisation: unipolar Drain-source voltage: 200V Drain current: 24A Pulsed drain current: 120A Power dissipation: 90W Case: TOLL Gate-source voltage: ±20V On-state resistance: 35mΩ Mounting: SMD Gate charge: 10nC Kind of package: reel; tape Kind of channel: enhancement Reverse recovery time: 138ns |
товару немає в наявності |
Мінімальне замовлення: 2000 шт В кошику од. на суму грн. | |||||||||||
| WMLL83N25JN | WAYON |
Category: SMD N channel transistorsDescription: Transistor: N-MOSFET; unipolar; 250V; 31A; Idm: 145A; 92W; TOLL Type of transistor: N-MOSFET Polarisation: unipolar Drain-source voltage: 250V Drain current: 31A Pulsed drain current: 145A Power dissipation: 92W Case: TOLL Gate-source voltage: ±20V On-state resistance: 31mΩ Mounting: SMD Gate charge: 10nC Kind of package: reel; tape Kind of channel: enhancement Reverse recovery time: 180ns |
товару немає в наявності |
Мінімальне замовлення: 2000 шт В кошику од. на суму грн. | |||||||||||
| WMLL85N20JN | WAYON |
Category: SMD N channel transistorsDescription: Transistor: N-MOSFET; unipolar; 200V; 50A; Idm: 240A; 180W; TOLL Type of transistor: N-MOSFET Polarisation: unipolar Drain-source voltage: 200V Drain current: 50A Pulsed drain current: 240A Power dissipation: 180W Case: TOLL Gate-source voltage: ±20V On-state resistance: 13.5mΩ Mounting: SMD Gate charge: 21nC Kind of package: reel; tape Kind of channel: enhancement Reverse recovery time: 160ns |
товару немає в наявності |
Мінімальне замовлення: 2000 шт В кошику од. на суму грн. | |||||||||||
| WMLL87N25JN | WAYON |
Category: SMD N channel transistorsDescription: Transistor: N-MOSFET; unipolar; 250V; 20A; Idm: 150A; 86W; TOLL Type of transistor: N-MOSFET Polarisation: unipolar Drain-source voltage: 250V Drain current: 20A Pulsed drain current: 150A Power dissipation: 86W Case: TOLL Gate-source voltage: ±20V On-state resistance: 25mΩ Mounting: SMD Gate charge: 12nC Kind of package: reel; tape Kind of channel: enhancement Reverse recovery time: 198ns |
товару немає в наявності |
Мінімальне замовлення: 2000 шт В кошику од. на суму грн. | |||||||||||
| WMLL98N20JN | WAYON |
Category: SMD N channel transistorsDescription: Transistor: N-MOSFET; unipolar; 200V; 87A; Idm: 435A; 312W; TOLL Type of transistor: N-MOSFET Polarisation: unipolar Drain-source voltage: 200V Drain current: 87A Pulsed drain current: 435A Power dissipation: 312W Case: TOLL Gate-source voltage: ±20V On-state resistance: 6.6mΩ Mounting: SMD Gate charge: 121nC Kind of package: reel; tape Kind of channel: enhancement Reverse recovery time: 160ns |
товару немає в наявності |
Мінімальне замовлення: 2000 шт В кошику од. на суму грн. | |||||||||||
| WMLL98N25JN | WAYON |
Category: SMD N channel transistorsDescription: Transistor: N-MOSFET; unipolar; 250V; 72A; Idm: 360A; 290W; TOLL Case: TOLL Mounting: SMD Pulsed drain current: 360A Power dissipation: 290W Gate charge: 96nC Polarisation: unipolar Drain current: 72A Kind of channel: enhancement Drain-source voltage: 250V Type of transistor: N-MOSFET Gate-source voltage: ±20V Kind of package: reel; tape On-state resistance: 10.6mΩ Reverse recovery time: 198ns |
товару немає в наявності |
Мінімальне замовлення: 2000 шт В кошику од. на суму грн. | |||||||||||
|
WMM020N06HG4 | WAYON |
Category: SMD N channel transistors Description: Transistor: N-MOSFET; unipolar; 60V; 258A; Idm: 1032A; 227W; TO263 Type of transistor: N-MOSFET Polarisation: unipolar Drain-source voltage: 60V Drain current: 258A Power dissipation: 227W Case: TO263 Gate-source voltage: ±20V On-state resistance: 2.1mΩ Mounting: SMD Kind of channel: enhancement Pulsed drain current: 1032A Gate charge: 102nC Kind of package: reel; tape |
на замовлення 10 шт: термін постачання 14-30 дні (днів) |
|
||||||||||
|
WMM020N10HGS | WAYON |
Category: SMD N channel transistorsDescription: Transistor: N-MOSFET; unipolar; 100V; 280A; Idm: 1120A; 390.6W Type of transistor: N-MOSFET Polarisation: unipolar Drain-source voltage: 100V Drain current: 280A Pulsed drain current: 1120A Power dissipation: 390.6W Case: TO263 Gate-source voltage: ±20V On-state resistance: 2.2mΩ Mounting: SMD Gate charge: 255nC Kind of package: reel; tape Kind of channel: enhancement |
на замовлення 66 шт: термін постачання 14-30 дні (днів) |
|
||||||||||
|
WMM030N06HG4 | WAYON |
Category: SMD N channel transistors Description: Transistor: N-MOSFET; unipolar; 60V; 184A; Idm: 736A; 208.3W; TO263 Type of transistor: N-MOSFET Polarisation: unipolar Drain-source voltage: 60V Drain current: 184A Pulsed drain current: 736A Power dissipation: 208.3W Case: TO263 Gate-source voltage: ±20V On-state resistance: 3mΩ Mounting: SMD Gate charge: 68nC Kind of package: reel; tape Kind of channel: enhancement |
на замовлення 19 шт: термін постачання 14-30 дні (днів) |
|
||||||||||
| WMM040N08HGS | WAYON |
Category: SMD N channel transistors Description: Transistor: N-MOSFET; unipolar; 80V; 180A; Idm: 720A; 227.3W; TO263 Type of transistor: N-MOSFET Polarisation: unipolar Drain-source voltage: 80V Drain current: 180A Power dissipation: 227.3W Case: TO263 Gate-source voltage: ±20V On-state resistance: 4.8mΩ Mounting: SMD Kind of channel: enhancement Kind of package: reel; tape Pulsed drain current: 720A Gate charge: 78.5nC |
на замовлення 96 шт: термін постачання 14-30 дні (днів) |
|
|||||||||||
|
WMM040N15HG2 | WAYON |
Category: SMD N channel transistors Description: Transistor: N-MOSFET; unipolar; 150V; 126A; Idm: 800A; 378.7W; TO263 Type of transistor: N-MOSFET Polarisation: unipolar Drain-source voltage: 150V Drain current: 126A Pulsed drain current: 800A Power dissipation: 378.7W Case: TO263 Gate-source voltage: ±20V On-state resistance: 4.6mΩ Mounting: SMD Gate charge: 74.3nC Kind of package: reel; tape Kind of channel: enhancement |
на замовлення 34 шт: термін постачання 14-30 дні (днів) |
|
||||||||||
|
WMM043N10HGS | WAYON |
Category: SMD N channel transistors Description: Transistor: N-MOSFET; unipolar; 100V; 145A; Idm: 580A; 208W; TO263 Type of transistor: N-MOSFET Polarisation: unipolar Drain-source voltage: 100V Drain current: 145A Pulsed drain current: 580A Power dissipation: 208W Case: TO263 Gate-source voltage: ±20V On-state resistance: 4.5mΩ Mounting: SMD Gate charge: 98.4nC Kind of package: reel; tape Kind of channel: enhancement |
на замовлення 27 шт: термін постачання 14-30 дні (днів) |
|
||||||||||
|
WMM048NV6HG4 | WAYON |
Category: SMD N channel transistors Description: Transistor: N-MOSFET; unipolar; 65V; 110A; Idm: 440A; 104.2W; TO263 Case: TO263 Kind of package: reel; tape Kind of channel: enhancement Type of transistor: N-MOSFET Mounting: SMD Polarisation: unipolar Gate charge: 28.5nC On-state resistance: 5.2mΩ Gate-source voltage: ±20V Drain current: 110A Drain-source voltage: 65V Power dissipation: 104.2W Pulsed drain current: 440A |
на замовлення 70 шт: термін постачання 14-30 дні (днів) |
|
||||||||||
|
WMM053N10HGS | WAYON |
Category: SMD N channel transistors Description: Transistor: N-MOSFET; unipolar; 100V; 120A; Idm: 480A; 164.5W; TO263 Type of transistor: N-MOSFET Polarisation: unipolar Drain-source voltage: 100V Drain current: 120A Pulsed drain current: 480A Power dissipation: 164.5W Case: TO263 Gate-source voltage: ±20V On-state resistance: 5.5mΩ Mounting: SMD Gate charge: 82.5nC Kind of package: reel; tape Kind of channel: enhancement |
на замовлення 28 шт: термін постачання 14-30 дні (днів) |
|
||||||||||
|
WMM06N80M3 | WAYON |
Category: SMD N channel transistorsDescription: Transistor: N-MOSFET; WMOS™ M3; unipolar; 800V; 5A; 50W; TO263 Type of transistor: N-MOSFET Technology: WMOS™ M3 Polarisation: unipolar Drain-source voltage: 800V Drain current: 5A Power dissipation: 50W Case: TO263 Gate-source voltage: ±30V On-state resistance: 2Ω Mounting: SMD Kind of package: reel; tape Kind of channel: enhancement |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||||
|
WMM07N60C2 | WAYON |
Category: SMD N channel transistorsDescription: Transistor: N-MOSFET; WMOS™ C2; unipolar; 600V; 5A; 42W; TO263 Type of transistor: N-MOSFET Technology: WMOS™ C2 Polarisation: unipolar Drain-source voltage: 600V Drain current: 5A Power dissipation: 42W Case: TO263 Gate-source voltage: ±30V On-state resistance: 1.14Ω Mounting: SMD Kind of package: reel; tape Kind of channel: enhancement |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||||
|
WMM07N65C2 | WAYON |
Category: SMD N channel transistorsDescription: Transistor: N-MOSFET; WMOS™ C2; unipolar; 650V; 5A; 42W; TO263 Type of transistor: N-MOSFET Polarisation: unipolar Drain-source voltage: 650V Drain current: 5A Case: TO263 Gate-source voltage: ±30V On-state resistance: 1.14Ω Mounting: SMD Kind of channel: enhancement Power dissipation: 42W Technology: WMOS™ C2 Kind of package: reel; tape |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||||
|
WMM07N80M3 | WAYON |
Category: SMD N channel transistorsDescription: Transistor: N-MOSFET; WMOS™ M3; unipolar; 800V; 6.8A; 55W; TO263 Type of transistor: N-MOSFET Technology: WMOS™ M3 Polarisation: unipolar Drain-source voltage: 800V Drain current: 6.8A Power dissipation: 55W Case: TO263 Gate-source voltage: ±30V On-state resistance: 1.8Ω Mounting: SMD Kind of package: reel; tape Kind of channel: enhancement |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||||
|
WMM08N80M3 | WAYON |
Category: SMD N channel transistorsDescription: Transistor: N-MOSFET; WMOS™ M3; unipolar; 800V; 7A; 70W; TO263 Type of transistor: N-MOSFET Technology: WMOS™ M3 Polarisation: unipolar Drain-source voltage: 800V Drain current: 7A Power dissipation: 70W Case: TO263 Gate-source voltage: ±30V On-state resistance: 1.38Ω Mounting: SMD Kind of package: reel; tape Kind of channel: enhancement |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||||
|
WMM09N60C2 | WAYON |
Category: SMD N channel transistorsDescription: Transistor: N-MOSFET; WMOS™ C2; unipolar; 600V; 6A; 45W; TO263 Type of transistor: N-MOSFET Technology: WMOS™ C2 Polarisation: unipolar Drain-source voltage: 600V Drain current: 6A Power dissipation: 45W Case: TO263 Gate-source voltage: ±30V On-state resistance: 940mΩ Mounting: SMD Kind of package: reel; tape Kind of channel: enhancement |
на замовлення 560 шт: термін постачання 14-30 дні (днів) |
|
||||||||||
|
WMM09N65C2 | WAYON |
Category: SMD N channel transistorsDescription: Transistor: N-MOSFET; WMOS™ C2; unipolar; 650V; 6A; 45W; TO263 Type of transistor: N-MOSFET Technology: WMOS™ C2 Polarisation: unipolar Drain-source voltage: 650V Drain current: 6A Power dissipation: 45W Case: TO263 Gate-source voltage: ±30V On-state resistance: 940mΩ Mounting: SMD Kind of package: reel; tape Kind of channel: enhancement |
на замовлення 612 шт: термін постачання 14-30 дні (днів) |
|
||||||||||
|
WMM10N60C2 | WAYON |
Category: SMD N channel transistorsDescription: Transistor: N-MOSFET; WMOS™ C2; unipolar; 600V; 8A; 57W; TO263 Type of transistor: N-MOSFET Technology: WMOS™ C2 Polarisation: unipolar Drain-source voltage: 600V Drain current: 8A Power dissipation: 57W Case: TO263 Gate-source voltage: ±30V On-state resistance: 690mΩ Mounting: SMD Kind of package: reel; tape Kind of channel: enhancement |
на замовлення 419 шт: термін постачання 14-30 дні (днів) |
|
||||||||||
|
WMM10N65C2 | WAYON |
Category: SMD N channel transistorsDescription: Transistor: N-MOSFET; WMOS™ C2; unipolar; 650V; 8A; 57W; TO263 Type of transistor: N-MOSFET Polarisation: unipolar Drain-source voltage: 650V Drain current: 8A Power dissipation: 57W Case: TO263 Gate-source voltage: ±30V On-state resistance: 690mΩ Mounting: SMD Kind of channel: enhancement Kind of package: reel; tape Technology: WMOS™ C2 |
на замовлення 563 шт: термін постачання 14-30 дні (днів) |
|
||||||||||
|
WMM10N70C2 | WAYON |
Category: SMD N channel transistorsDescription: Transistor: N-MOSFET; WMOS™ C2; unipolar; 700V; 7.5A; 57W; TO263 Type of transistor: N-MOSFET Technology: WMOS™ C2 Polarisation: unipolar Drain-source voltage: 700V Drain current: 7.5A Power dissipation: 57W Case: TO263 Gate-source voltage: ±30V On-state resistance: 920mΩ Mounting: SMD Kind of package: reel; tape Kind of channel: enhancement |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||||
|
WMM10N80M3 | WAYON |
Category: SMD N channel transistorsDescription: Transistor: N-MOSFET; WMOS™ M3; unipolar; 800V; 10A; 85W; TO263 Type of transistor: N-MOSFET Technology: WMOS™ M3 Polarisation: unipolar Drain-source voltage: 800V Drain current: 10A Power dissipation: 85W Case: TO263 Gate-source voltage: ±30V On-state resistance: 1.03Ω Mounting: SMD Kind of package: reel; tape Kind of channel: enhancement |
товару немає в наявності |
Мінімальне замовлення: 800 шт В кошику од. на суму грн. | ||||||||||
|
WMM11N60C2 | WAYON |
Category: SMD N channel transistorsDescription: Transistor: N-MOSFET; WMOS™ C2; unipolar; 600V; 9A; 63W; TO263 Type of transistor: N-MOSFET Polarisation: unipolar Drain-source voltage: 600V Drain current: 9A Case: TO263 Gate-source voltage: ±30V On-state resistance: 0.54Ω Mounting: SMD Kind of channel: enhancement Power dissipation: 63W Technology: WMOS™ C2 Kind of package: reel; tape |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||||
|
WMM11N65C2 | WAYON |
Category: SMD N channel transistors Description: Transistor: N-MOSFET; WMOS™ C2; unipolar; 650V; 9A; 63W; TO263 Type of transistor: N-MOSFET Technology: WMOS™ C2 Polarisation: unipolar Drain-source voltage: 650V Drain current: 9A Power dissipation: 63W Case: TO263 Gate-source voltage: ±30V On-state resistance: 0.54Ω Mounting: SMD Kind of package: reel; tape Kind of channel: enhancement |
на замовлення 518 шт: термін постачання 14-30 дні (днів) |
|
||||||||||
|
WMM11N80M3 | WAYON |
Category: SMD N channel transistors Description: Transistor: N-MOSFET; WMOS™ M3; unipolar; 800V; 10.5A; 85W; TO263 Type of transistor: N-MOSFET Technology: WMOS™ M3 Polarisation: unipolar Drain-source voltage: 800V Drain current: 10.5A Power dissipation: 85W Case: TO263 Gate-source voltage: ±30V On-state resistance: 0.8Ω Mounting: SMD Kind of package: reel; tape Kind of channel: enhancement |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||||
|
WMM120N04TS | WAYON |
Category: SMD N channel transistors Description: Transistor: N-MOSFET; unipolar; 40V; 170A; Idm: 680A; 192W; TO263 Type of transistor: N-MOSFET Polarisation: unipolar Drain-source voltage: 40V Drain current: 170A Power dissipation: 192W Case: TO263 Gate-source voltage: ±20V On-state resistance: 3.8mΩ Mounting: SMD Gate charge: 95nC Kind of channel: enhancement Pulsed drain current: 680A Kind of package: reel; tape |
на замовлення 55 шт: термін постачання 14-30 дні (днів) |
|
||||||||||
|
WMM120P06TS | WAYON |
Category: SMD P channel transistors Description: Transistor: P-MOSFET; unipolar; -60V; -120A; Idm: -480A; 183.8W Mounting: SMD Type of transistor: P-MOSFET Gate-source voltage: ±20V Kind of package: reel; tape Case: TO263 On-state resistance: 6.8mΩ Pulsed drain current: -480A Power dissipation: 183.8W Gate charge: 84nC Polarisation: unipolar Drain current: -120A Kind of channel: enhancement Drain-source voltage: -60V |
на замовлення 268 шт: термін постачання 14-30 дні (днів) |
|
||||||||||
|
WMM12N80M3 | WAYON |
Category: SMD N channel transistorsDescription: Transistor: N-MOSFET; WMOS™ M3; unipolar; 800V; 12A; 86W; TO263 Type of transistor: N-MOSFET Technology: WMOS™ M3 Polarisation: unipolar Drain-source voltage: 800V Drain current: 12A Power dissipation: 86W Case: TO263 Gate-source voltage: ±30V On-state resistance: 620mΩ Mounting: SMD Kind of package: reel; tape Kind of channel: enhancement |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||||
|
WMM130N20JN | WAYON |
Category: SMD N channel transistorsDescription: Transistor: N-MOSFET; unipolar; 200V; 117A; Idm: 620A; 416W; TO263 Drain-source voltage: 200V Drain current: 117A Case: TO263 Polarisation: unipolar On-state resistance: 5.2mΩ Pulsed drain current: 620A Power dissipation: 416W Kind of channel: enhancement Gate charge: 188nC Reverse recovery time: 196ns Gate-source voltage: ±20V Type of transistor: N-MOSFET Kind of package: reel; tape Mounting: SMD |
товару немає в наявності |
Мінімальне замовлення: 800 шт В кошику од. на суму грн. | ||||||||||
|
WMM13N80M3 | WAYON |
Category: SMD N channel transistorsDescription: Transistor: N-MOSFET; WMOS™ M3; unipolar; 800V; 13A; 130W; TO263 Type of transistor: N-MOSFET Technology: WMOS™ M3 Polarisation: unipolar Drain-source voltage: 800V Drain current: 13A Power dissipation: 130W Case: TO263 Gate-source voltage: ±30V On-state resistance: 0.48Ω Mounting: SMD Kind of package: reel; tape Kind of channel: enhancement |
на замовлення 58 шт: термін постачання 14-30 дні (днів) |
|
||||||||||
|
WMM14N65C4 | WAYON |
Category: SMD N channel transistorsDescription: Transistor: N-MOSFET; WMOS™ C4; unipolar; 650V; 6A; Idm: 26A; 85W Type of transistor: N-MOSFET Technology: WMOS™ C4 Polarisation: unipolar Drain-source voltage: 650V Drain current: 6A Power dissipation: 85W Case: TO263 Gate-source voltage: ±30V On-state resistance: 0.38Ω Mounting: SMD Kind of package: reel; tape Kind of channel: enhancement Pulsed drain current: 26A Gate charge: 13nC |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||||
|
WMM15N60C4 | WAYON |
Category: SMD N channel transistors Description: Transistor: N-MOSFET; WMOS™ C4; unipolar; 600V; 7.8A; Idm: 26A; 86W Mounting: SMD Kind of channel: enhancement Drain-source voltage: 600V Type of transistor: N-MOSFET Gate-source voltage: ±30V Kind of package: reel; tape Case: TO263 On-state resistance: 0.3Ω Pulsed drain current: 26A Power dissipation: 86W Gate charge: 14.6nC Polarisation: unipolar Technology: WMOS™ C4 Drain current: 7.8A |
на замовлення 269 шт: термін постачання 14-30 дні (днів) |
|
| WML6N90D1B |
Виробник: WAYON
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 900V; 6A; TO220FP
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 900V
Drain current: 6A
Case: TO220FP
Gate-source voltage: ±30V
On-state resistance: 2.3Ω
Mounting: THT
Kind of package: tube
Kind of channel: enhancement
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 900V; 6A; TO220FP
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 900V
Drain current: 6A
Case: TO220FP
Gate-source voltage: ±30V
On-state resistance: 2.3Ω
Mounting: THT
Kind of package: tube
Kind of channel: enhancement
на замовлення 676 шт:
термін постачання 14-30 дні (днів)
| Кількість | Ціна без ПДВ |
|---|---|
| 8+ | 60.57 грн |
| 11+ | 37.88 грн |
| 50+ | 28.62 грн |
| 250+ | 25.31 грн |
| 500+ | 21.92 грн |
| WML7N65D1B |
Виробник: WAYON
Category: THT N channel transistors
Description: Transistor: N-MOSFET; WMOS™ D1; unipolar; 650V; 7A; Idm: 28A; 63W
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 650V
Drain current: 7A
Case: TO220FP
Gate-source voltage: ±30V
On-state resistance: 1.35Ω
Mounting: THT
Gate charge: 24.3nC
Kind of channel: enhancement
Pulsed drain current: 28A
Power dissipation: 63W
Technology: WMOS™ D1
Kind of package: tube
Category: THT N channel transistors
Description: Transistor: N-MOSFET; WMOS™ D1; unipolar; 650V; 7A; Idm: 28A; 63W
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 650V
Drain current: 7A
Case: TO220FP
Gate-source voltage: ±30V
On-state resistance: 1.35Ω
Mounting: THT
Gate charge: 24.3nC
Kind of channel: enhancement
Pulsed drain current: 28A
Power dissipation: 63W
Technology: WMOS™ D1
Kind of package: tube
товару немає в наявності
В кошику
од. на суму грн.
| WML7N80D1 |
Виробник: WAYON
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 800V; 7A; Idm: 28A; 52W; TO220FP
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 800V
Drain current: 7A
Power dissipation: 52W
Case: TO220FP
Gate-source voltage: ±30V
On-state resistance: 1.4Ω
Mounting: THT
Kind of package: tube
Kind of channel: enhancement
Pulsed drain current: 28A
Gate charge: 23nC
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 800V; 7A; Idm: 28A; 52W; TO220FP
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 800V
Drain current: 7A
Power dissipation: 52W
Case: TO220FP
Gate-source voltage: ±30V
On-state resistance: 1.4Ω
Mounting: THT
Kind of package: tube
Kind of channel: enhancement
Pulsed drain current: 28A
Gate charge: 23nC
товару немає в наявності
В кошику
од. на суму грн.
| WML80R1K0S |
Виробник: WAYON
Category: THT N channel transistors
Description: Transistor: N-MOSFET; WMOS™ S; unipolar; 800V; 3.6A; Idm: 22A; 29W
Type of transistor: N-MOSFET
Technology: WMOS™ S
Polarisation: unipolar
Drain-source voltage: 800V
Drain current: 3.6A
Pulsed drain current: 22A
Power dissipation: 29W
Case: TO220FP
Gate-source voltage: ±30V
On-state resistance: 1.05Ω
Mounting: THT
Gate charge: 13.2nC
Kind of package: tube
Kind of channel: enhancement
Category: THT N channel transistors
Description: Transistor: N-MOSFET; WMOS™ S; unipolar; 800V; 3.6A; Idm: 22A; 29W
Type of transistor: N-MOSFET
Technology: WMOS™ S
Polarisation: unipolar
Drain-source voltage: 800V
Drain current: 3.6A
Pulsed drain current: 22A
Power dissipation: 29W
Case: TO220FP
Gate-source voltage: ±30V
On-state resistance: 1.05Ω
Mounting: THT
Gate charge: 13.2nC
Kind of package: tube
Kind of channel: enhancement
товару немає в наявності
В кошику
од. на суму грн.
| WML80R350S |
Виробник: WAYON
Category: THT N channel transistors
Description: Transistor: N-MOSFET; WMOS™ S; unipolar; 800V; 8.4A; Idm: 56A; 34W
Type of transistor: N-MOSFET
Technology: WMOS™ S
Polarisation: unipolar
Drain-source voltage: 800V
Drain current: 8.4A
Pulsed drain current: 56A
Power dissipation: 34W
Case: TO220FP
Gate-source voltage: ±30V
On-state resistance: 0.33Ω
Mounting: THT
Gate charge: 31nC
Kind of package: tube
Kind of channel: enhancement
Category: THT N channel transistors
Description: Transistor: N-MOSFET; WMOS™ S; unipolar; 800V; 8.4A; Idm: 56A; 34W
Type of transistor: N-MOSFET
Technology: WMOS™ S
Polarisation: unipolar
Drain-source voltage: 800V
Drain current: 8.4A
Pulsed drain current: 56A
Power dissipation: 34W
Case: TO220FP
Gate-source voltage: ±30V
On-state resistance: 0.33Ω
Mounting: THT
Gate charge: 31nC
Kind of package: tube
Kind of channel: enhancement
товару немає в наявності
В кошику
од. на суму грн.
| WML80R480S |
Виробник: WAYON
Category: THT N channel transistors
Description: Transistor: N-MOSFET; WMOS™ S; unipolar; 800V; 7.2A; Idm: 48A; 31W
Type of transistor: N-MOSFET
Technology: WMOS™ S
Polarisation: unipolar
Drain-source voltage: 800V
Drain current: 7.2A
Pulsed drain current: 48A
Power dissipation: 31W
Case: TO220FP
Gate-source voltage: ±30V
On-state resistance: 0.48Ω
Mounting: THT
Gate charge: 25nC
Kind of package: tube
Kind of channel: enhancement
Category: THT N channel transistors
Description: Transistor: N-MOSFET; WMOS™ S; unipolar; 800V; 7.2A; Idm: 48A; 31W
Type of transistor: N-MOSFET
Technology: WMOS™ S
Polarisation: unipolar
Drain-source voltage: 800V
Drain current: 7.2A
Pulsed drain current: 48A
Power dissipation: 31W
Case: TO220FP
Gate-source voltage: ±30V
On-state resistance: 0.48Ω
Mounting: THT
Gate charge: 25nC
Kind of package: tube
Kind of channel: enhancement
товару немає в наявності
В кошику
од. на суму грн.
| WML80R720S |
Виробник: WAYON
Category: THT N channel transistors
Description: Transistor: N-MOSFET; WMOS™ S; unipolar; 800V; 4.2A; Idm: 24A; 31W
Type of transistor: N-MOSFET
Technology: WMOS™ S
Polarisation: unipolar
Drain-source voltage: 800V
Drain current: 4.2A
Pulsed drain current: 24A
Power dissipation: 31W
Case: TO220FP
Gate-source voltage: ±30V
On-state resistance: 0.8Ω
Mounting: THT
Gate charge: 16nC
Kind of package: tube
Kind of channel: enhancement
Category: THT N channel transistors
Description: Transistor: N-MOSFET; WMOS™ S; unipolar; 800V; 4.2A; Idm: 24A; 31W
Type of transistor: N-MOSFET
Technology: WMOS™ S
Polarisation: unipolar
Drain-source voltage: 800V
Drain current: 4.2A
Pulsed drain current: 24A
Power dissipation: 31W
Case: TO220FP
Gate-source voltage: ±30V
On-state resistance: 0.8Ω
Mounting: THT
Gate charge: 16nC
Kind of package: tube
Kind of channel: enhancement
товару немає в наявності
В кошику
од. на суму грн.
| WML90R260S |
Виробник: WAYON
Category: THT N channel transistors
Description: Transistor: N-MOSFET; WMOS™ S; unipolar; 900V; 10A; Idm: 50A; 34W
Mounting: THT
Pulsed drain current: 50A
Power dissipation: 34W
Gate charge: 39.5nC
Polarisation: unipolar
Technology: WMOS™ S
Drain current: 10A
Kind of channel: enhancement
Drain-source voltage: 900V
Type of transistor: N-MOSFET
Gate-source voltage: ±30V
Kind of package: tube
Case: TO220FP
On-state resistance: 0.26Ω
Category: THT N channel transistors
Description: Transistor: N-MOSFET; WMOS™ S; unipolar; 900V; 10A; Idm: 50A; 34W
Mounting: THT
Pulsed drain current: 50A
Power dissipation: 34W
Gate charge: 39.5nC
Polarisation: unipolar
Technology: WMOS™ S
Drain current: 10A
Kind of channel: enhancement
Drain-source voltage: 900V
Type of transistor: N-MOSFET
Gate-source voltage: ±30V
Kind of package: tube
Case: TO220FP
On-state resistance: 0.26Ω
товару немає в наявності
В кошику
од. на суму грн.
| WML98N20JN |
![]() |
Виробник: WAYON
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 200V; 87A; Idm: 435A; 35W; TO220FP
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 200V
Drain current: 87A
Pulsed drain current: 435A
Power dissipation: 35W
Case: TO220FP
Gate-source voltage: ±20V
On-state resistance: 6.6mΩ
Mounting: THT
Gate charge: 121nC
Kind of package: tube
Kind of channel: enhancement
Reverse recovery time: 160ns
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 200V; 87A; Idm: 435A; 35W; TO220FP
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 200V
Drain current: 87A
Pulsed drain current: 435A
Power dissipation: 35W
Case: TO220FP
Gate-source voltage: ±20V
On-state resistance: 6.6mΩ
Mounting: THT
Gate charge: 121nC
Kind of package: tube
Kind of channel: enhancement
Reverse recovery time: 160ns
товару немає в наявності
Мінімальне замовлення: 1000 шт
В кошику
од. на суму грн.
| WML9N50D1B |
![]() |
Виробник: WAYON
Category: THT N channel transistors
Description: Transistor: N-MOSFET; WMOS™ D1; unipolar; 500V; 9A; Idm: 36A; 45W
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 500V
Drain current: 9A
Case: TO220FP
Gate-source voltage: ±30V
On-state resistance: 0.68Ω
Mounting: THT
Gate charge: 72nC
Kind of channel: enhancement
Pulsed drain current: 36A
Power dissipation: 45W
Technology: WMOS™ D1
Kind of package: tube
Category: THT N channel transistors
Description: Transistor: N-MOSFET; WMOS™ D1; unipolar; 500V; 9A; Idm: 36A; 45W
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 500V
Drain current: 9A
Case: TO220FP
Gate-source voltage: ±30V
On-state resistance: 0.68Ω
Mounting: THT
Gate charge: 72nC
Kind of channel: enhancement
Pulsed drain current: 36A
Power dissipation: 45W
Technology: WMOS™ D1
Kind of package: tube
товару немає в наявності
Мінімальне замовлення: 3 шт
В кошику
од. на суму грн.
| WMLL010N04LG4 |
![]() |
Виробник: WAYON
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 40V; 378A; Idm: 1512A; 333.3W; TOLL
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 40V
Drain current: 378A
Pulsed drain current: 1512A
Power dissipation: 333.3W
Case: TOLL
Gate-source voltage: ±20V
On-state resistance: 1.3mΩ
Mounting: SMD
Kind of package: reel; tape
Kind of channel: enhancement
Gate charge: 118nC
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 40V; 378A; Idm: 1512A; 333.3W; TOLL
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 40V
Drain current: 378A
Pulsed drain current: 1512A
Power dissipation: 333.3W
Case: TOLL
Gate-source voltage: ±20V
On-state resistance: 1.3mΩ
Mounting: SMD
Kind of package: reel; tape
Kind of channel: enhancement
Gate charge: 118nC
на замовлення 107 шт:
термін постачання 14-30 дні (днів)
| Кількість | Ціна без ПДВ |
|---|---|
| 5+ | 97.98 грн |
| 10+ | 86.02 грн |
| 15+ | 63.69 грн |
| 41+ | 60.38 грн |
| WMLL013N08HGS |
Виробник: WAYON
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 80V; 400A; Idm: 1600A; 468.8W; TOLL
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 80V
Drain current: 400A
Pulsed drain current: 1.6kA
Power dissipation: 468.8W
Case: TOLL
Gate-source voltage: ±20V
On-state resistance: 1.35mΩ
Mounting: SMD
Gate charge: 243.6nC
Kind of package: reel; tape
Kind of channel: enhancement
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 80V; 400A; Idm: 1600A; 468.8W; TOLL
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 80V
Drain current: 400A
Pulsed drain current: 1.6kA
Power dissipation: 468.8W
Case: TOLL
Gate-source voltage: ±20V
On-state resistance: 1.35mΩ
Mounting: SMD
Gate charge: 243.6nC
Kind of package: reel; tape
Kind of channel: enhancement
товару немає в наявності
В кошику
од. на суму грн.
| WMLL014N06HG4 |
Виробник: WAYON
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 60V; 378A; Idm: 1512A; 454.5W; TOLL
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 60V
Drain current: 378A
Power dissipation: 454.5W
Case: TOLL
Mounting: SMD
Kind of package: reel; tape
Kind of channel: enhancement
On-state resistance: 1.55mΩ
Pulsed drain current: 1512A
Gate charge: 102nC
Gate-source voltage: ±20V
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 60V; 378A; Idm: 1512A; 454.5W; TOLL
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 60V
Drain current: 378A
Power dissipation: 454.5W
Case: TOLL
Mounting: SMD
Kind of package: reel; tape
Kind of channel: enhancement
On-state resistance: 1.55mΩ
Pulsed drain current: 1512A
Gate charge: 102nC
Gate-source voltage: ±20V
товару немає в наявності
В кошику
од. на суму грн.
| WMLL017N10HGS |
Виробник: WAYON
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 60V; 378A; Idm: 1512A; 454.5W; TOLL
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 60V
Drain current: 378A
Pulsed drain current: 1512A
Power dissipation: 454.5W
Case: TOLL
Gate-source voltage: ±20V
On-state resistance: 1.55mΩ
Mounting: SMD
Gate charge: 102nC
Kind of package: reel; tape
Kind of channel: enhancement
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 60V; 378A; Idm: 1512A; 454.5W; TOLL
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 60V
Drain current: 378A
Pulsed drain current: 1512A
Power dissipation: 454.5W
Case: TOLL
Gate-source voltage: ±20V
On-state resistance: 1.55mΩ
Mounting: SMD
Gate charge: 102nC
Kind of package: reel; tape
Kind of channel: enhancement
товару немає в наявності
В кошику
од. на суму грн.
| WMLL020N08HGS |
Виробник: WAYON
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 80V; 310A; Idm: 1240A; 347.2W; TOLL
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 80V
Drain current: 310A
Pulsed drain current: 1240A
Power dissipation: 347.2W
Case: TOLL
Gate-source voltage: ±20V
On-state resistance: 2mΩ
Mounting: SMD
Gate charge: 0.14µC
Kind of package: reel; tape
Kind of channel: enhancement
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 80V; 310A; Idm: 1240A; 347.2W; TOLL
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 80V
Drain current: 310A
Pulsed drain current: 1240A
Power dissipation: 347.2W
Case: TOLL
Gate-source voltage: ±20V
On-state resistance: 2mΩ
Mounting: SMD
Gate charge: 0.14µC
Kind of package: reel; tape
Kind of channel: enhancement
товару немає в наявності
В кошику
од. на суму грн.
| WMLL020N10HG4 |
Виробник: WAYON
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 100V; 304A; Idm: 1216A; 468.7W; TOLL
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 100V
Drain current: 304A
Pulsed drain current: 1216A
Power dissipation: 468.7W
Case: TOLL
Gate-source voltage: ±20V
On-state resistance: 2mΩ
Mounting: SMD
Gate charge: 125nC
Kind of package: reel; tape
Kind of channel: enhancement
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 100V; 304A; Idm: 1216A; 468.7W; TOLL
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 100V
Drain current: 304A
Pulsed drain current: 1216A
Power dissipation: 468.7W
Case: TOLL
Gate-source voltage: ±20V
On-state resistance: 2mΩ
Mounting: SMD
Gate charge: 125nC
Kind of package: reel; tape
Kind of channel: enhancement
товару немає в наявності
В кошику
од. на суму грн.
| WMLL020NV8HGS |
Виробник: WAYON
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 85V; 190A; Idm: 1200A; 347.2W; TOLL
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 85V
Drain current: 190A
Pulsed drain current: 1.2kA
Power dissipation: 347.2W
Case: TOLL
Gate-source voltage: ±20V
On-state resistance: 2.2mΩ
Mounting: SMD
Gate charge: 142nC
Kind of package: reel; tape
Kind of channel: enhancement
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 85V; 190A; Idm: 1200A; 347.2W; TOLL
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 85V
Drain current: 190A
Pulsed drain current: 1.2kA
Power dissipation: 347.2W
Case: TOLL
Gate-source voltage: ±20V
On-state resistance: 2.2mΩ
Mounting: SMD
Gate charge: 142nC
Kind of package: reel; tape
Kind of channel: enhancement
на замовлення 40 шт:
термін постачання 14-30 дні (днів)
| Кількість | Ціна без ПДВ |
|---|---|
| 4+ | 129.16 грн |
| 10+ | 113.31 грн |
| 25+ | 100.91 грн |
| WMLL025N10HGS |
Виробник: WAYON
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 100V; 260A; Idm: 1040A; 347.2W; TOLL
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 100V
Drain current: 260A
Power dissipation: 347.2W
Case: TOLL
Gate-source voltage: ±20V
On-state resistance: 2.6mΩ
Mounting: SMD
Kind of channel: enhancement
Pulsed drain current: 1040A
Gate charge: 150nC
Kind of package: reel; tape
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 100V; 260A; Idm: 1040A; 347.2W; TOLL
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 100V
Drain current: 260A
Power dissipation: 347.2W
Case: TOLL
Gate-source voltage: ±20V
On-state resistance: 2.6mΩ
Mounting: SMD
Kind of channel: enhancement
Pulsed drain current: 1040A
Gate charge: 150nC
Kind of package: reel; tape
на замовлення 89 шт:
термін постачання 14-30 дні (днів)
| Кількість | Ціна без ПДВ |
|---|---|
| 5+ | 106.00 грн |
| 10+ | 93.46 грн |
| 25+ | 82.71 грн |
| WMLL030N12HGS |
Виробник: WAYON
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 120V; 225A; Idm: 900A; 365.8W; TOLL
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 120V
Drain current: 225A
Pulsed drain current: 900A
Power dissipation: 365.8W
Case: TOLL
Gate-source voltage: ±20V
On-state resistance: 3.3mΩ
Mounting: SMD
Gate charge: 144nC
Kind of package: reel; tape
Kind of channel: enhancement
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 120V; 225A; Idm: 900A; 365.8W; TOLL
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 120V
Drain current: 225A
Pulsed drain current: 900A
Power dissipation: 365.8W
Case: TOLL
Gate-source voltage: ±20V
On-state resistance: 3.3mΩ
Mounting: SMD
Gate charge: 144nC
Kind of package: reel; tape
Kind of channel: enhancement
на замовлення 165 шт:
термін постачання 14-30 дні (днів)
| Кількість | Ціна без ПДВ |
|---|---|
| 5+ | 91.75 грн |
| 10+ | 81.06 грн |
| 25+ | 71.96 грн |
| 100+ | 63.69 грн |
| WMLL040N15HG2 |
Виробник: WAYON
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 150V; 160A; Idm: 908A; 500W; TOLL
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 150V
Drain current: 160A
Pulsed drain current: 908A
Power dissipation: 500W
Case: TOLL
Gate-source voltage: ±20V
On-state resistance: 4.2mΩ
Mounting: SMD
Gate charge: 74.3nC
Kind of package: reel; tape
Kind of channel: enhancement
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 150V; 160A; Idm: 908A; 500W; TOLL
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 150V
Drain current: 160A
Pulsed drain current: 908A
Power dissipation: 500W
Case: TOLL
Gate-source voltage: ±20V
On-state resistance: 4.2mΩ
Mounting: SMD
Gate charge: 74.3nC
Kind of package: reel; tape
Kind of channel: enhancement
на замовлення 19 шт:
термін постачання 14-30 дні (днів)
| Кількість | Ціна без ПДВ |
|---|---|
| 2+ | 345.60 грн |
| 10+ | 302.72 грн |
| WMLL065N15HG2 |
Виробник: WAYON
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 150V; 172A; Idm: 688A; 394.7W; TOLL
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 150V
Drain current: 172A
Power dissipation: 394.7W
Case: TOLL
Gate-source voltage: ±20V
On-state resistance: 6mΩ
Mounting: SMD
Kind of channel: enhancement
Pulsed drain current: 688A
Gate charge: 85nC
Kind of package: reel; tape
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 150V; 172A; Idm: 688A; 394.7W; TOLL
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 150V
Drain current: 172A
Power dissipation: 394.7W
Case: TOLL
Gate-source voltage: ±20V
On-state resistance: 6mΩ
Mounting: SMD
Kind of channel: enhancement
Pulsed drain current: 688A
Gate charge: 85nC
Kind of package: reel; tape
товару немає в наявності
Мінімальне замовлення: 2000 шт
В кошику
од. на суму грн.
| WMLL099N20HG2 |
Виробник: WAYON
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 200V; 90A; Idm: 568A; 500W; TOLL
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 200V
Drain current: 90A
Pulsed drain current: 568A
Power dissipation: 500W
Case: TOLL
Gate-source voltage: ±20V
On-state resistance: 10.5mΩ
Mounting: SMD
Gate charge: 68.5nC
Kind of package: reel; tape
Kind of channel: enhancement
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 200V; 90A; Idm: 568A; 500W; TOLL
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 200V
Drain current: 90A
Pulsed drain current: 568A
Power dissipation: 500W
Case: TOLL
Gate-source voltage: ±20V
On-state resistance: 10.5mΩ
Mounting: SMD
Gate charge: 68.5nC
Kind of package: reel; tape
Kind of channel: enhancement
на замовлення 30 шт:
термін постачання 14-30 дні (днів)
| Кількість | Ціна без ПДВ |
|---|---|
| 2+ | 393.70 грн |
| 10+ | 344.90 грн |
| 25+ | 306.03 грн |
| WMLL130N20JN |
![]() |
Виробник: WAYON
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 200V; 117A; Idm: 620A; 416W; TOLL
Drain-source voltage: 200V
Drain current: 117A
Case: TOLL
Polarisation: unipolar
On-state resistance: 5.2mΩ
Pulsed drain current: 620A
Power dissipation: 416W
Kind of channel: enhancement
Gate charge: 188nC
Reverse recovery time: 196ns
Gate-source voltage: ±20V
Type of transistor: N-MOSFET
Kind of package: reel; tape
Mounting: SMD
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 200V; 117A; Idm: 620A; 416W; TOLL
Drain-source voltage: 200V
Drain current: 117A
Case: TOLL
Polarisation: unipolar
On-state resistance: 5.2mΩ
Pulsed drain current: 620A
Power dissipation: 416W
Kind of channel: enhancement
Gate charge: 188nC
Reverse recovery time: 196ns
Gate-source voltage: ±20V
Type of transistor: N-MOSFET
Kind of package: reel; tape
Mounting: SMD
товару немає в наявності
Мінімальне замовлення: 2000 шт
В кошику
од. на суму грн.
| WMLL130N25JN |
![]() |
Виробник: WAYON
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 250V; 96A; Idm: 435A; 312W; TOLL
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 250V
Drain current: 96A
Pulsed drain current: 435A
Power dissipation: 312W
Case: TOLL
Gate-source voltage: ±20V
On-state resistance: 8.4mΩ
Mounting: SMD
Gate charge: 121nC
Kind of package: reel; tape
Kind of channel: enhancement
Reverse recovery time: 195ns
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 250V; 96A; Idm: 435A; 312W; TOLL
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 250V
Drain current: 96A
Pulsed drain current: 435A
Power dissipation: 312W
Case: TOLL
Gate-source voltage: ±20V
On-state resistance: 8.4mΩ
Mounting: SMD
Gate charge: 121nC
Kind of package: reel; tape
Kind of channel: enhancement
Reverse recovery time: 195ns
товару немає в наявності
Мінімальне замовлення: 2000 шт
В кошику
од. на суму грн.
| WMLL40N20JN |
![]() |
Виробник: WAYON
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 200V; 21A; Idm: 110A; 89W; TOLL
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 200V
Drain current: 21A
Pulsed drain current: 110A
Power dissipation: 89W
Case: TOLL
Gate-source voltage: ±20V
On-state resistance: 46mΩ
Mounting: SMD
Gate charge: 7.7nC
Kind of package: reel; tape
Kind of channel: enhancement
Reverse recovery time: 141ns
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 200V; 21A; Idm: 110A; 89W; TOLL
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 200V
Drain current: 21A
Pulsed drain current: 110A
Power dissipation: 89W
Case: TOLL
Gate-source voltage: ±20V
On-state resistance: 46mΩ
Mounting: SMD
Gate charge: 7.7nC
Kind of package: reel; tape
Kind of channel: enhancement
Reverse recovery time: 141ns
товару немає в наявності
Мінімальне замовлення: 2000 шт
В кошику
од. на суму грн.
| WMLL50N20JN |
![]() |
Виробник: WAYON
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 200V; 24A; Idm: 120A; 90W; TOLL
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 200V
Drain current: 24A
Pulsed drain current: 120A
Power dissipation: 90W
Case: TOLL
Gate-source voltage: ±20V
On-state resistance: 35mΩ
Mounting: SMD
Gate charge: 10nC
Kind of package: reel; tape
Kind of channel: enhancement
Reverse recovery time: 138ns
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 200V; 24A; Idm: 120A; 90W; TOLL
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 200V
Drain current: 24A
Pulsed drain current: 120A
Power dissipation: 90W
Case: TOLL
Gate-source voltage: ±20V
On-state resistance: 35mΩ
Mounting: SMD
Gate charge: 10nC
Kind of package: reel; tape
Kind of channel: enhancement
Reverse recovery time: 138ns
товару немає в наявності
Мінімальне замовлення: 2000 шт
В кошику
од. на суму грн.
| WMLL83N25JN |
![]() |
Виробник: WAYON
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 250V; 31A; Idm: 145A; 92W; TOLL
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 250V
Drain current: 31A
Pulsed drain current: 145A
Power dissipation: 92W
Case: TOLL
Gate-source voltage: ±20V
On-state resistance: 31mΩ
Mounting: SMD
Gate charge: 10nC
Kind of package: reel; tape
Kind of channel: enhancement
Reverse recovery time: 180ns
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 250V; 31A; Idm: 145A; 92W; TOLL
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 250V
Drain current: 31A
Pulsed drain current: 145A
Power dissipation: 92W
Case: TOLL
Gate-source voltage: ±20V
On-state resistance: 31mΩ
Mounting: SMD
Gate charge: 10nC
Kind of package: reel; tape
Kind of channel: enhancement
Reverse recovery time: 180ns
товару немає в наявності
Мінімальне замовлення: 2000 шт
В кошику
од. на суму грн.
| WMLL85N20JN |
![]() |
Виробник: WAYON
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 200V; 50A; Idm: 240A; 180W; TOLL
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 200V
Drain current: 50A
Pulsed drain current: 240A
Power dissipation: 180W
Case: TOLL
Gate-source voltage: ±20V
On-state resistance: 13.5mΩ
Mounting: SMD
Gate charge: 21nC
Kind of package: reel; tape
Kind of channel: enhancement
Reverse recovery time: 160ns
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 200V; 50A; Idm: 240A; 180W; TOLL
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 200V
Drain current: 50A
Pulsed drain current: 240A
Power dissipation: 180W
Case: TOLL
Gate-source voltage: ±20V
On-state resistance: 13.5mΩ
Mounting: SMD
Gate charge: 21nC
Kind of package: reel; tape
Kind of channel: enhancement
Reverse recovery time: 160ns
товару немає в наявності
Мінімальне замовлення: 2000 шт
В кошику
од. на суму грн.
| WMLL87N25JN |
![]() |
Виробник: WAYON
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 250V; 20A; Idm: 150A; 86W; TOLL
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 250V
Drain current: 20A
Pulsed drain current: 150A
Power dissipation: 86W
Case: TOLL
Gate-source voltage: ±20V
On-state resistance: 25mΩ
Mounting: SMD
Gate charge: 12nC
Kind of package: reel; tape
Kind of channel: enhancement
Reverse recovery time: 198ns
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 250V; 20A; Idm: 150A; 86W; TOLL
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 250V
Drain current: 20A
Pulsed drain current: 150A
Power dissipation: 86W
Case: TOLL
Gate-source voltage: ±20V
On-state resistance: 25mΩ
Mounting: SMD
Gate charge: 12nC
Kind of package: reel; tape
Kind of channel: enhancement
Reverse recovery time: 198ns
товару немає в наявності
Мінімальне замовлення: 2000 шт
В кошику
од. на суму грн.
| WMLL98N20JN |
![]() |
Виробник: WAYON
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 200V; 87A; Idm: 435A; 312W; TOLL
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 200V
Drain current: 87A
Pulsed drain current: 435A
Power dissipation: 312W
Case: TOLL
Gate-source voltage: ±20V
On-state resistance: 6.6mΩ
Mounting: SMD
Gate charge: 121nC
Kind of package: reel; tape
Kind of channel: enhancement
Reverse recovery time: 160ns
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 200V; 87A; Idm: 435A; 312W; TOLL
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 200V
Drain current: 87A
Pulsed drain current: 435A
Power dissipation: 312W
Case: TOLL
Gate-source voltage: ±20V
On-state resistance: 6.6mΩ
Mounting: SMD
Gate charge: 121nC
Kind of package: reel; tape
Kind of channel: enhancement
Reverse recovery time: 160ns
товару немає в наявності
Мінімальне замовлення: 2000 шт
В кошику
од. на суму грн.
| WMLL98N25JN |
![]() |
Виробник: WAYON
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 250V; 72A; Idm: 360A; 290W; TOLL
Case: TOLL
Mounting: SMD
Pulsed drain current: 360A
Power dissipation: 290W
Gate charge: 96nC
Polarisation: unipolar
Drain current: 72A
Kind of channel: enhancement
Drain-source voltage: 250V
Type of transistor: N-MOSFET
Gate-source voltage: ±20V
Kind of package: reel; tape
On-state resistance: 10.6mΩ
Reverse recovery time: 198ns
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 250V; 72A; Idm: 360A; 290W; TOLL
Case: TOLL
Mounting: SMD
Pulsed drain current: 360A
Power dissipation: 290W
Gate charge: 96nC
Polarisation: unipolar
Drain current: 72A
Kind of channel: enhancement
Drain-source voltage: 250V
Type of transistor: N-MOSFET
Gate-source voltage: ±20V
Kind of package: reel; tape
On-state resistance: 10.6mΩ
Reverse recovery time: 198ns
товару немає в наявності
Мінімальне замовлення: 2000 шт
В кошику
од. на суму грн.
| WMM020N06HG4 |
Виробник: WAYON
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 60V; 258A; Idm: 1032A; 227W; TO263
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 60V
Drain current: 258A
Power dissipation: 227W
Case: TO263
Gate-source voltage: ±20V
On-state resistance: 2.1mΩ
Mounting: SMD
Kind of channel: enhancement
Pulsed drain current: 1032A
Gate charge: 102nC
Kind of package: reel; tape
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 60V; 258A; Idm: 1032A; 227W; TO263
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 60V
Drain current: 258A
Power dissipation: 227W
Case: TO263
Gate-source voltage: ±20V
On-state resistance: 2.1mΩ
Mounting: SMD
Kind of channel: enhancement
Pulsed drain current: 1032A
Gate charge: 102nC
Kind of package: reel; tape
на замовлення 10 шт:
термін постачання 14-30 дні (днів)
| Кількість | Ціна без ПДВ |
|---|---|
| 6+ | 75.27 грн |
| WMM020N10HGS |
![]() |
Виробник: WAYON
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 100V; 280A; Idm: 1120A; 390.6W
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 100V
Drain current: 280A
Pulsed drain current: 1120A
Power dissipation: 390.6W
Case: TO263
Gate-source voltage: ±20V
On-state resistance: 2.2mΩ
Mounting: SMD
Gate charge: 255nC
Kind of package: reel; tape
Kind of channel: enhancement
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 100V; 280A; Idm: 1120A; 390.6W
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 100V
Drain current: 280A
Pulsed drain current: 1120A
Power dissipation: 390.6W
Case: TO263
Gate-source voltage: ±20V
On-state resistance: 2.2mΩ
Mounting: SMD
Gate charge: 255nC
Kind of package: reel; tape
Kind of channel: enhancement
на замовлення 66 шт:
термін постачання 14-30 дні (днів)
| Кількість | Ціна без ПДВ |
|---|---|
| 3+ | 181.71 грн |
| 5+ | 161.29 грн |
| 25+ | 140.61 грн |
| WMM030N06HG4 |
Виробник: WAYON
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 60V; 184A; Idm: 736A; 208.3W; TO263
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 60V
Drain current: 184A
Pulsed drain current: 736A
Power dissipation: 208.3W
Case: TO263
Gate-source voltage: ±20V
On-state resistance: 3mΩ
Mounting: SMD
Gate charge: 68nC
Kind of package: reel; tape
Kind of channel: enhancement
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 60V; 184A; Idm: 736A; 208.3W; TO263
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 60V
Drain current: 184A
Pulsed drain current: 736A
Power dissipation: 208.3W
Case: TO263
Gate-source voltage: ±20V
On-state resistance: 3mΩ
Mounting: SMD
Gate charge: 68nC
Kind of package: reel; tape
Kind of channel: enhancement
на замовлення 19 шт:
термін постачання 14-30 дні (днів)
| Кількість | Ціна без ПДВ |
|---|---|
| 7+ | 63.69 грн |
| 19+ | 52.11 грн |
| WMM040N08HGS |
Виробник: WAYON
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 80V; 180A; Idm: 720A; 227.3W; TO263
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 80V
Drain current: 180A
Power dissipation: 227.3W
Case: TO263
Gate-source voltage: ±20V
On-state resistance: 4.8mΩ
Mounting: SMD
Kind of channel: enhancement
Kind of package: reel; tape
Pulsed drain current: 720A
Gate charge: 78.5nC
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 80V; 180A; Idm: 720A; 227.3W; TO263
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 80V
Drain current: 180A
Power dissipation: 227.3W
Case: TO263
Gate-source voltage: ±20V
On-state resistance: 4.8mΩ
Mounting: SMD
Kind of channel: enhancement
Kind of package: reel; tape
Pulsed drain current: 720A
Gate charge: 78.5nC
на замовлення 96 шт:
термін постачання 14-30 дні (днів)
| Кількість | Ціна без ПДВ |
|---|---|
| 7+ | 64.51 грн |
| 25+ | 57.07 грн |
| WMM040N15HG2 |
Виробник: WAYON
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 150V; 126A; Idm: 800A; 378.7W; TO263
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 150V
Drain current: 126A
Pulsed drain current: 800A
Power dissipation: 378.7W
Case: TO263
Gate-source voltage: ±20V
On-state resistance: 4.6mΩ
Mounting: SMD
Gate charge: 74.3nC
Kind of package: reel; tape
Kind of channel: enhancement
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 150V; 126A; Idm: 800A; 378.7W; TO263
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 150V
Drain current: 126A
Pulsed drain current: 800A
Power dissipation: 378.7W
Case: TO263
Gate-source voltage: ±20V
On-state resistance: 4.6mΩ
Mounting: SMD
Gate charge: 74.3nC
Kind of package: reel; tape
Kind of channel: enhancement
на замовлення 34 шт:
термін постачання 14-30 дні (днів)
| Кількість | Ціна без ПДВ |
|---|---|
| 2+ | 303.74 грн |
| 5+ | 265.50 грн |
| 25+ | 235.73 грн |
| WMM043N10HGS |
Виробник: WAYON
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 100V; 145A; Idm: 580A; 208W; TO263
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 100V
Drain current: 145A
Pulsed drain current: 580A
Power dissipation: 208W
Case: TO263
Gate-source voltage: ±20V
On-state resistance: 4.5mΩ
Mounting: SMD
Gate charge: 98.4nC
Kind of package: reel; tape
Kind of channel: enhancement
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 100V; 145A; Idm: 580A; 208W; TO263
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 100V
Drain current: 145A
Pulsed drain current: 580A
Power dissipation: 208W
Case: TO263
Gate-source voltage: ±20V
On-state resistance: 4.5mΩ
Mounting: SMD
Gate charge: 98.4nC
Kind of package: reel; tape
Kind of channel: enhancement
на замовлення 27 шт:
термін постачання 14-30 дні (днів)
| Кількість | Ціна без ПДВ |
|---|---|
| 6+ | 76.60 грн |
| 7+ | 67.82 грн |
| 18+ | 54.59 грн |
| WMM048NV6HG4 |
Виробник: WAYON
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 65V; 110A; Idm: 440A; 104.2W; TO263
Case: TO263
Kind of package: reel; tape
Kind of channel: enhancement
Type of transistor: N-MOSFET
Mounting: SMD
Polarisation: unipolar
Gate charge: 28.5nC
On-state resistance: 5.2mΩ
Gate-source voltage: ±20V
Drain current: 110A
Drain-source voltage: 65V
Power dissipation: 104.2W
Pulsed drain current: 440A
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 65V; 110A; Idm: 440A; 104.2W; TO263
Case: TO263
Kind of package: reel; tape
Kind of channel: enhancement
Type of transistor: N-MOSFET
Mounting: SMD
Polarisation: unipolar
Gate charge: 28.5nC
On-state resistance: 5.2mΩ
Gate-source voltage: ±20V
Drain current: 110A
Drain-source voltage: 65V
Power dissipation: 104.2W
Pulsed drain current: 440A
на замовлення 70 шт:
термін постачання 14-30 дні (днів)
| Кількість | Ціна без ПДВ |
|---|---|
| 7+ | 67.70 грн |
| 8+ | 52.11 грн |
| 25+ | 43.51 грн |
| WMM053N10HGS |
Виробник: WAYON
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 100V; 120A; Idm: 480A; 164.5W; TO263
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 100V
Drain current: 120A
Pulsed drain current: 480A
Power dissipation: 164.5W
Case: TO263
Gate-source voltage: ±20V
On-state resistance: 5.5mΩ
Mounting: SMD
Gate charge: 82.5nC
Kind of package: reel; tape
Kind of channel: enhancement
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 100V; 120A; Idm: 480A; 164.5W; TO263
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 100V
Drain current: 120A
Pulsed drain current: 480A
Power dissipation: 164.5W
Case: TO263
Gate-source voltage: ±20V
On-state resistance: 5.5mΩ
Mounting: SMD
Gate charge: 82.5nC
Kind of package: reel; tape
Kind of channel: enhancement
на замовлення 28 шт:
термін постачання 14-30 дні (днів)
| Кількість | Ціна без ПДВ |
|---|---|
| 7+ | 68.59 грн |
| 8+ | 52.77 грн |
| 25+ | 44.08 грн |
| WMM06N80M3 |
![]() |
Виробник: WAYON
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; WMOS™ M3; unipolar; 800V; 5A; 50W; TO263
Type of transistor: N-MOSFET
Technology: WMOS™ M3
Polarisation: unipolar
Drain-source voltage: 800V
Drain current: 5A
Power dissipation: 50W
Case: TO263
Gate-source voltage: ±30V
On-state resistance: 2Ω
Mounting: SMD
Kind of package: reel; tape
Kind of channel: enhancement
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; WMOS™ M3; unipolar; 800V; 5A; 50W; TO263
Type of transistor: N-MOSFET
Technology: WMOS™ M3
Polarisation: unipolar
Drain-source voltage: 800V
Drain current: 5A
Power dissipation: 50W
Case: TO263
Gate-source voltage: ±30V
On-state resistance: 2Ω
Mounting: SMD
Kind of package: reel; tape
Kind of channel: enhancement
товару немає в наявності
В кошику
од. на суму грн.
| WMM07N60C2 |
![]() |
Виробник: WAYON
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; WMOS™ C2; unipolar; 600V; 5A; 42W; TO263
Type of transistor: N-MOSFET
Technology: WMOS™ C2
Polarisation: unipolar
Drain-source voltage: 600V
Drain current: 5A
Power dissipation: 42W
Case: TO263
Gate-source voltage: ±30V
On-state resistance: 1.14Ω
Mounting: SMD
Kind of package: reel; tape
Kind of channel: enhancement
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; WMOS™ C2; unipolar; 600V; 5A; 42W; TO263
Type of transistor: N-MOSFET
Technology: WMOS™ C2
Polarisation: unipolar
Drain-source voltage: 600V
Drain current: 5A
Power dissipation: 42W
Case: TO263
Gate-source voltage: ±30V
On-state resistance: 1.14Ω
Mounting: SMD
Kind of package: reel; tape
Kind of channel: enhancement
товару немає в наявності
В кошику
од. на суму грн.
| WMM07N65C2 |
![]() |
Виробник: WAYON
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; WMOS™ C2; unipolar; 650V; 5A; 42W; TO263
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 650V
Drain current: 5A
Case: TO263
Gate-source voltage: ±30V
On-state resistance: 1.14Ω
Mounting: SMD
Kind of channel: enhancement
Power dissipation: 42W
Technology: WMOS™ C2
Kind of package: reel; tape
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; WMOS™ C2; unipolar; 650V; 5A; 42W; TO263
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 650V
Drain current: 5A
Case: TO263
Gate-source voltage: ±30V
On-state resistance: 1.14Ω
Mounting: SMD
Kind of channel: enhancement
Power dissipation: 42W
Technology: WMOS™ C2
Kind of package: reel; tape
товару немає в наявності
В кошику
од. на суму грн.
| WMM07N80M3 |
![]() |
Виробник: WAYON
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; WMOS™ M3; unipolar; 800V; 6.8A; 55W; TO263
Type of transistor: N-MOSFET
Technology: WMOS™ M3
Polarisation: unipolar
Drain-source voltage: 800V
Drain current: 6.8A
Power dissipation: 55W
Case: TO263
Gate-source voltage: ±30V
On-state resistance: 1.8Ω
Mounting: SMD
Kind of package: reel; tape
Kind of channel: enhancement
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; WMOS™ M3; unipolar; 800V; 6.8A; 55W; TO263
Type of transistor: N-MOSFET
Technology: WMOS™ M3
Polarisation: unipolar
Drain-source voltage: 800V
Drain current: 6.8A
Power dissipation: 55W
Case: TO263
Gate-source voltage: ±30V
On-state resistance: 1.8Ω
Mounting: SMD
Kind of package: reel; tape
Kind of channel: enhancement
товару немає в наявності
В кошику
од. на суму грн.
| WMM08N80M3 |
![]() |
Виробник: WAYON
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; WMOS™ M3; unipolar; 800V; 7A; 70W; TO263
Type of transistor: N-MOSFET
Technology: WMOS™ M3
Polarisation: unipolar
Drain-source voltage: 800V
Drain current: 7A
Power dissipation: 70W
Case: TO263
Gate-source voltage: ±30V
On-state resistance: 1.38Ω
Mounting: SMD
Kind of package: reel; tape
Kind of channel: enhancement
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; WMOS™ M3; unipolar; 800V; 7A; 70W; TO263
Type of transistor: N-MOSFET
Technology: WMOS™ M3
Polarisation: unipolar
Drain-source voltage: 800V
Drain current: 7A
Power dissipation: 70W
Case: TO263
Gate-source voltage: ±30V
On-state resistance: 1.38Ω
Mounting: SMD
Kind of package: reel; tape
Kind of channel: enhancement
товару немає в наявності
В кошику
од. на суму грн.
| WMM09N60C2 |
![]() |
Виробник: WAYON
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; WMOS™ C2; unipolar; 600V; 6A; 45W; TO263
Type of transistor: N-MOSFET
Technology: WMOS™ C2
Polarisation: unipolar
Drain-source voltage: 600V
Drain current: 6A
Power dissipation: 45W
Case: TO263
Gate-source voltage: ±30V
On-state resistance: 940mΩ
Mounting: SMD
Kind of package: reel; tape
Kind of channel: enhancement
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; WMOS™ C2; unipolar; 600V; 6A; 45W; TO263
Type of transistor: N-MOSFET
Technology: WMOS™ C2
Polarisation: unipolar
Drain-source voltage: 600V
Drain current: 6A
Power dissipation: 45W
Case: TO263
Gate-source voltage: ±30V
On-state resistance: 940mΩ
Mounting: SMD
Kind of package: reel; tape
Kind of channel: enhancement
на замовлення 560 шт:
термін постачання 14-30 дні (днів)
| Кількість | Ціна без ПДВ |
|---|---|
| 9+ | 49.88 грн |
| 16+ | 26.14 грн |
| 25+ | 23.24 грн |
| 100+ | 20.93 грн |
| WMM09N65C2 |
![]() |
Виробник: WAYON
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; WMOS™ C2; unipolar; 650V; 6A; 45W; TO263
Type of transistor: N-MOSFET
Technology: WMOS™ C2
Polarisation: unipolar
Drain-source voltage: 650V
Drain current: 6A
Power dissipation: 45W
Case: TO263
Gate-source voltage: ±30V
On-state resistance: 940mΩ
Mounting: SMD
Kind of package: reel; tape
Kind of channel: enhancement
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; WMOS™ C2; unipolar; 650V; 6A; 45W; TO263
Type of transistor: N-MOSFET
Technology: WMOS™ C2
Polarisation: unipolar
Drain-source voltage: 650V
Drain current: 6A
Power dissipation: 45W
Case: TO263
Gate-source voltage: ±30V
On-state resistance: 940mΩ
Mounting: SMD
Kind of package: reel; tape
Kind of channel: enhancement
на замовлення 612 шт:
термін постачання 14-30 дні (днів)
| Кількість | Ціна без ПДВ |
|---|---|
| 9+ | 49.88 грн |
| 16+ | 27.29 грн |
| 25+ | 24.40 грн |
| 100+ | 22.08 грн |
| WMM10N60C2 |
![]() |
Виробник: WAYON
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; WMOS™ C2; unipolar; 600V; 8A; 57W; TO263
Type of transistor: N-MOSFET
Technology: WMOS™ C2
Polarisation: unipolar
Drain-source voltage: 600V
Drain current: 8A
Power dissipation: 57W
Case: TO263
Gate-source voltage: ±30V
On-state resistance: 690mΩ
Mounting: SMD
Kind of package: reel; tape
Kind of channel: enhancement
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; WMOS™ C2; unipolar; 600V; 8A; 57W; TO263
Type of transistor: N-MOSFET
Technology: WMOS™ C2
Polarisation: unipolar
Drain-source voltage: 600V
Drain current: 8A
Power dissipation: 57W
Case: TO263
Gate-source voltage: ±30V
On-state resistance: 690mΩ
Mounting: SMD
Kind of package: reel; tape
Kind of channel: enhancement
на замовлення 419 шт:
термін постачання 14-30 дні (днів)
| Кількість | Ціна без ПДВ |
|---|---|
| 9+ | 51.66 грн |
| 12+ | 34.90 грн |
| 25+ | 30.77 грн |
| 47+ | 20.18 грн |
| 129+ | 19.11 грн |
| WMM10N65C2 |
![]() |
Виробник: WAYON
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; WMOS™ C2; unipolar; 650V; 8A; 57W; TO263
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 650V
Drain current: 8A
Power dissipation: 57W
Case: TO263
Gate-source voltage: ±30V
On-state resistance: 690mΩ
Mounting: SMD
Kind of channel: enhancement
Kind of package: reel; tape
Technology: WMOS™ C2
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; WMOS™ C2; unipolar; 650V; 8A; 57W; TO263
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 650V
Drain current: 8A
Power dissipation: 57W
Case: TO263
Gate-source voltage: ±30V
On-state resistance: 690mΩ
Mounting: SMD
Kind of channel: enhancement
Kind of package: reel; tape
Technology: WMOS™ C2
на замовлення 563 шт:
термін постачання 14-30 дні (днів)
| Кількість | Ціна без ПДВ |
|---|---|
| 9+ | 51.66 грн |
| 12+ | 35.40 грн |
| 25+ | 31.35 грн |
| 46+ | 20.84 грн |
| 125+ | 19.69 грн |
| WMM10N70C2 |
![]() |
Виробник: WAYON
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; WMOS™ C2; unipolar; 700V; 7.5A; 57W; TO263
Type of transistor: N-MOSFET
Technology: WMOS™ C2
Polarisation: unipolar
Drain-source voltage: 700V
Drain current: 7.5A
Power dissipation: 57W
Case: TO263
Gate-source voltage: ±30V
On-state resistance: 920mΩ
Mounting: SMD
Kind of package: reel; tape
Kind of channel: enhancement
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; WMOS™ C2; unipolar; 700V; 7.5A; 57W; TO263
Type of transistor: N-MOSFET
Technology: WMOS™ C2
Polarisation: unipolar
Drain-source voltage: 700V
Drain current: 7.5A
Power dissipation: 57W
Case: TO263
Gate-source voltage: ±30V
On-state resistance: 920mΩ
Mounting: SMD
Kind of package: reel; tape
Kind of channel: enhancement
товару немає в наявності
В кошику
од. на суму грн.
| WMM10N80M3 |
![]() |
Виробник: WAYON
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; WMOS™ M3; unipolar; 800V; 10A; 85W; TO263
Type of transistor: N-MOSFET
Technology: WMOS™ M3
Polarisation: unipolar
Drain-source voltage: 800V
Drain current: 10A
Power dissipation: 85W
Case: TO263
Gate-source voltage: ±30V
On-state resistance: 1.03Ω
Mounting: SMD
Kind of package: reel; tape
Kind of channel: enhancement
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; WMOS™ M3; unipolar; 800V; 10A; 85W; TO263
Type of transistor: N-MOSFET
Technology: WMOS™ M3
Polarisation: unipolar
Drain-source voltage: 800V
Drain current: 10A
Power dissipation: 85W
Case: TO263
Gate-source voltage: ±30V
On-state resistance: 1.03Ω
Mounting: SMD
Kind of package: reel; tape
Kind of channel: enhancement
товару немає в наявності
Мінімальне замовлення: 800 шт
В кошику
од. на суму грн.
| WMM11N60C2 |
![]() |
Виробник: WAYON
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; WMOS™ C2; unipolar; 600V; 9A; 63W; TO263
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 600V
Drain current: 9A
Case: TO263
Gate-source voltage: ±30V
On-state resistance: 0.54Ω
Mounting: SMD
Kind of channel: enhancement
Power dissipation: 63W
Technology: WMOS™ C2
Kind of package: reel; tape
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; WMOS™ C2; unipolar; 600V; 9A; 63W; TO263
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 600V
Drain current: 9A
Case: TO263
Gate-source voltage: ±30V
On-state resistance: 0.54Ω
Mounting: SMD
Kind of channel: enhancement
Power dissipation: 63W
Technology: WMOS™ C2
Kind of package: reel; tape
товару немає в наявності
В кошику
од. на суму грн.
| WMM11N65C2 |
Виробник: WAYON
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; WMOS™ C2; unipolar; 650V; 9A; 63W; TO263
Type of transistor: N-MOSFET
Technology: WMOS™ C2
Polarisation: unipolar
Drain-source voltage: 650V
Drain current: 9A
Power dissipation: 63W
Case: TO263
Gate-source voltage: ±30V
On-state resistance: 0.54Ω
Mounting: SMD
Kind of package: reel; tape
Kind of channel: enhancement
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; WMOS™ C2; unipolar; 650V; 9A; 63W; TO263
Type of transistor: N-MOSFET
Technology: WMOS™ C2
Polarisation: unipolar
Drain-source voltage: 650V
Drain current: 9A
Power dissipation: 63W
Case: TO263
Gate-source voltage: ±30V
On-state resistance: 0.54Ω
Mounting: SMD
Kind of package: reel; tape
Kind of channel: enhancement
на замовлення 518 шт:
термін постачання 14-30 дні (днів)
| Кількість | Ціна без ПДВ |
|---|---|
| 9+ | 51.66 грн |
| 10+ | 42.68 грн |
| 25+ | 37.22 грн |
| 39+ | 24.73 грн |
| 105+ | 23.41 грн |
| WMM11N80M3 |
Виробник: WAYON
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; WMOS™ M3; unipolar; 800V; 10.5A; 85W; TO263
Type of transistor: N-MOSFET
Technology: WMOS™ M3
Polarisation: unipolar
Drain-source voltage: 800V
Drain current: 10.5A
Power dissipation: 85W
Case: TO263
Gate-source voltage: ±30V
On-state resistance: 0.8Ω
Mounting: SMD
Kind of package: reel; tape
Kind of channel: enhancement
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; WMOS™ M3; unipolar; 800V; 10.5A; 85W; TO263
Type of transistor: N-MOSFET
Technology: WMOS™ M3
Polarisation: unipolar
Drain-source voltage: 800V
Drain current: 10.5A
Power dissipation: 85W
Case: TO263
Gate-source voltage: ±30V
On-state resistance: 0.8Ω
Mounting: SMD
Kind of package: reel; tape
Kind of channel: enhancement
товару немає в наявності
В кошику
од. на суму грн.
| WMM120N04TS |
Виробник: WAYON
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 40V; 170A; Idm: 680A; 192W; TO263
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 40V
Drain current: 170A
Power dissipation: 192W
Case: TO263
Gate-source voltage: ±20V
On-state resistance: 3.8mΩ
Mounting: SMD
Gate charge: 95nC
Kind of channel: enhancement
Pulsed drain current: 680A
Kind of package: reel; tape
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 40V; 170A; Idm: 680A; 192W; TO263
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 40V
Drain current: 170A
Power dissipation: 192W
Case: TO263
Gate-source voltage: ±20V
On-state resistance: 3.8mΩ
Mounting: SMD
Gate charge: 95nC
Kind of channel: enhancement
Pulsed drain current: 680A
Kind of package: reel; tape
на замовлення 55 шт:
термін постачання 14-30 дні (днів)
| Кількість | Ціна без ПДВ |
|---|---|
| 8+ | 60.48 грн |
| 12+ | 37.55 грн |
| 25+ | 31.26 грн |
| 36+ | 26.30 грн |
| WMM120P06TS |
Виробник: WAYON
Category: SMD P channel transistors
Description: Transistor: P-MOSFET; unipolar; -60V; -120A; Idm: -480A; 183.8W
Mounting: SMD
Type of transistor: P-MOSFET
Gate-source voltage: ±20V
Kind of package: reel; tape
Case: TO263
On-state resistance: 6.8mΩ
Pulsed drain current: -480A
Power dissipation: 183.8W
Gate charge: 84nC
Polarisation: unipolar
Drain current: -120A
Kind of channel: enhancement
Drain-source voltage: -60V
Category: SMD P channel transistors
Description: Transistor: P-MOSFET; unipolar; -60V; -120A; Idm: -480A; 183.8W
Mounting: SMD
Type of transistor: P-MOSFET
Gate-source voltage: ±20V
Kind of package: reel; tape
Case: TO263
On-state resistance: 6.8mΩ
Pulsed drain current: -480A
Power dissipation: 183.8W
Gate charge: 84nC
Polarisation: unipolar
Drain current: -120A
Kind of channel: enhancement
Drain-source voltage: -60V
на замовлення 268 шт:
термін постачання 14-30 дні (днів)
| Кількість | Ціна без ПДВ |
|---|---|
| 6+ | 75.71 грн |
| 7+ | 67.00 грн |
| 25+ | 60.38 грн |
| WMM12N80M3 |
![]() |
Виробник: WAYON
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; WMOS™ M3; unipolar; 800V; 12A; 86W; TO263
Type of transistor: N-MOSFET
Technology: WMOS™ M3
Polarisation: unipolar
Drain-source voltage: 800V
Drain current: 12A
Power dissipation: 86W
Case: TO263
Gate-source voltage: ±30V
On-state resistance: 620mΩ
Mounting: SMD
Kind of package: reel; tape
Kind of channel: enhancement
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; WMOS™ M3; unipolar; 800V; 12A; 86W; TO263
Type of transistor: N-MOSFET
Technology: WMOS™ M3
Polarisation: unipolar
Drain-source voltage: 800V
Drain current: 12A
Power dissipation: 86W
Case: TO263
Gate-source voltage: ±30V
On-state resistance: 620mΩ
Mounting: SMD
Kind of package: reel; tape
Kind of channel: enhancement
товару немає в наявності
В кошику
од. на суму грн.
| WMM130N20JN |
![]() |
Виробник: WAYON
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 200V; 117A; Idm: 620A; 416W; TO263
Drain-source voltage: 200V
Drain current: 117A
Case: TO263
Polarisation: unipolar
On-state resistance: 5.2mΩ
Pulsed drain current: 620A
Power dissipation: 416W
Kind of channel: enhancement
Gate charge: 188nC
Reverse recovery time: 196ns
Gate-source voltage: ±20V
Type of transistor: N-MOSFET
Kind of package: reel; tape
Mounting: SMD
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 200V; 117A; Idm: 620A; 416W; TO263
Drain-source voltage: 200V
Drain current: 117A
Case: TO263
Polarisation: unipolar
On-state resistance: 5.2mΩ
Pulsed drain current: 620A
Power dissipation: 416W
Kind of channel: enhancement
Gate charge: 188nC
Reverse recovery time: 196ns
Gate-source voltage: ±20V
Type of transistor: N-MOSFET
Kind of package: reel; tape
Mounting: SMD
товару немає в наявності
Мінімальне замовлення: 800 шт
В кошику
од. на суму грн.
| WMM13N80M3 |
![]() |
Виробник: WAYON
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; WMOS™ M3; unipolar; 800V; 13A; 130W; TO263
Type of transistor: N-MOSFET
Technology: WMOS™ M3
Polarisation: unipolar
Drain-source voltage: 800V
Drain current: 13A
Power dissipation: 130W
Case: TO263
Gate-source voltage: ±30V
On-state resistance: 0.48Ω
Mounting: SMD
Kind of package: reel; tape
Kind of channel: enhancement
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; WMOS™ M3; unipolar; 800V; 13A; 130W; TO263
Type of transistor: N-MOSFET
Technology: WMOS™ M3
Polarisation: unipolar
Drain-source voltage: 800V
Drain current: 13A
Power dissipation: 130W
Case: TO263
Gate-source voltage: ±30V
On-state resistance: 0.48Ω
Mounting: SMD
Kind of package: reel; tape
Kind of channel: enhancement
на замовлення 58 шт:
термін постачання 14-30 дні (днів)
| Кількість | Ціна без ПДВ |
|---|---|
| 10+ | 43.17 грн |
| 25+ | 39.12 грн |
| WMM14N65C4 |
![]() |
Виробник: WAYON
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; WMOS™ C4; unipolar; 650V; 6A; Idm: 26A; 85W
Type of transistor: N-MOSFET
Technology: WMOS™ C4
Polarisation: unipolar
Drain-source voltage: 650V
Drain current: 6A
Power dissipation: 85W
Case: TO263
Gate-source voltage: ±30V
On-state resistance: 0.38Ω
Mounting: SMD
Kind of package: reel; tape
Kind of channel: enhancement
Pulsed drain current: 26A
Gate charge: 13nC
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; WMOS™ C4; unipolar; 650V; 6A; Idm: 26A; 85W
Type of transistor: N-MOSFET
Technology: WMOS™ C4
Polarisation: unipolar
Drain-source voltage: 650V
Drain current: 6A
Power dissipation: 85W
Case: TO263
Gate-source voltage: ±30V
On-state resistance: 0.38Ω
Mounting: SMD
Kind of package: reel; tape
Kind of channel: enhancement
Pulsed drain current: 26A
Gate charge: 13nC
товару немає в наявності
В кошику
од. на суму грн.
| WMM15N60C4 |
Виробник: WAYON
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; WMOS™ C4; unipolar; 600V; 7.8A; Idm: 26A; 86W
Mounting: SMD
Kind of channel: enhancement
Drain-source voltage: 600V
Type of transistor: N-MOSFET
Gate-source voltage: ±30V
Kind of package: reel; tape
Case: TO263
On-state resistance: 0.3Ω
Pulsed drain current: 26A
Power dissipation: 86W
Gate charge: 14.6nC
Polarisation: unipolar
Technology: WMOS™ C4
Drain current: 7.8A
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; WMOS™ C4; unipolar; 600V; 7.8A; Idm: 26A; 86W
Mounting: SMD
Kind of channel: enhancement
Drain-source voltage: 600V
Type of transistor: N-MOSFET
Gate-source voltage: ±30V
Kind of package: reel; tape
Case: TO263
On-state resistance: 0.3Ω
Pulsed drain current: 26A
Power dissipation: 86W
Gate charge: 14.6nC
Polarisation: unipolar
Technology: WMOS™ C4
Drain current: 7.8A
на замовлення 269 шт:
термін постачання 14-30 дні (днів)
| Кількість | Ціна без ПДВ |
|---|---|
| 5+ | 94.42 грн |
| 6+ | 78.58 грн |
| 10+ | 66.17 грн |
| 20+ | 47.15 грн |
| 55+ | 44.66 грн |






















