Фото | Назва | Виробник | Інформація |
Доступність |
Ціна |
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WMO06N80M3 | WAYON |
![]() Description: Transistor: N-MOSFET; WMOS™ M3; unipolar; 800V; 5A; 50W; TO252 Type of transistor: N-MOSFET Technology: WMOS™ M3 Polarisation: unipolar Drain-source voltage: 800V Drain current: 5A Power dissipation: 50W Case: TO252 Gate-source voltage: ±30V On-state resistance: 2Ω Mounting: SMD Kind of package: reel; tape Kind of channel: enhancement |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||||||||
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WMO07N60C2 | WAYON |
![]() Description: Transistor: N-MOSFET; WMOS™ C2; unipolar; 600V; 5A; 42W; TO252 Type of transistor: N-MOSFET Polarisation: unipolar Drain-source voltage: 600V Drain current: 5A Power dissipation: 42W Case: TO252 Gate-source voltage: ±30V On-state resistance: 1.14Ω Mounting: SMD Kind of package: reel; tape Kind of channel: enhancement Technology: WMOS™ C2 |
на замовлення 195 шт: термін постачання 21-30 дні (днів) |
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WMO07N60C4 | WAYON |
Category: SMD N channel transistors Description: Transistor: N-MOSFET; WMOS™ C4; unipolar; 600V; 2.8A; Idm: 9A; 42W Type of transistor: N-MOSFET Polarisation: unipolar Drain-source voltage: 600V Drain current: 2.8A Pulsed drain current: 9A Power dissipation: 42W Case: TO252 Gate-source voltage: ±30V On-state resistance: 1.14Ω Mounting: SMD Gate charge: 5.2nC Kind of package: reel; tape Kind of channel: enhancement Technology: WMOS™ C4 |
товару немає в наявності |
В кошику од. на суму грн. | |||||||||||||||
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WMO07N65C2 | WAYON |
![]() Description: Transistor: N-MOSFET; WMOS™ C2; unipolar; 650V; 5A; 42W; TO252 Type of transistor: N-MOSFET Polarisation: unipolar Drain-source voltage: 650V Drain current: 5A Power dissipation: 42W Case: TO252 Gate-source voltage: ±30V On-state resistance: 1.14Ω Mounting: SMD Kind of package: reel; tape Kind of channel: enhancement Technology: WMOS™ C2 |
на замовлення 328 шт: термін постачання 21-30 дні (днів) |
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WMO07N65C4 | WAYON |
Category: SMD N channel transistors Description: Transistor: N-MOSFET; WMOS™ C4; unipolar; 650V; 2.8A; Idm: 9A; 42W Type of transistor: N-MOSFET Polarisation: unipolar Drain-source voltage: 650V Drain current: 2.8A Pulsed drain current: 9A Power dissipation: 42W Case: TO252 Gate-source voltage: ±30V On-state resistance: 1.14Ω Mounting: SMD Gate charge: 5.2nC Kind of package: reel; tape Kind of channel: enhancement Technology: WMOS™ C4 |
товару немає в наявності |
В кошику од. на суму грн. | |||||||||||||||
WMO07N70C4 | WAYON |
Category: SMD N channel transistors Description: Transistor: N-MOSFET; WMOS™ C4; unipolar; 700V; 2.8A; Idm: 9A; 42W Type of transistor: N-MOSFET Technology: WMOS™ C4 Polarisation: unipolar Drain-source voltage: 700V Drain current: 2.8A Power dissipation: 42W Case: TO252 Gate-source voltage: ±30V On-state resistance: 1.14Ω Mounting: SMD Kind of package: reel; tape Kind of channel: enhancement Pulsed drain current: 9A Gate charge: 5.2nC |
товару немає в наявності |
В кошику од. на суму грн. | |||||||||||||||
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WMO07N80M3 | WAYON |
![]() Description: Transistor: N-MOSFET; WMOS™ M3; unipolar; 800V; 6.8A; 55W; TO252 Type of transistor: N-MOSFET Polarisation: unipolar Drain-source voltage: 800V Drain current: 6.8A Power dissipation: 55W Case: TO252 Gate-source voltage: ±30V On-state resistance: 1.8Ω Mounting: SMD Kind of package: reel; tape Kind of channel: enhancement Technology: WMOS™ M3 |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||||||||
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WMO080N10HG2 | WAYON |
Category: SMD N channel transistors Description: Transistor: N-MOSFET; unipolar; 100V; 53.7A; Idm: 340A; 108.7W Type of transistor: N-MOSFET Polarisation: unipolar Drain-source voltage: 100V Drain current: 53.7A Pulsed drain current: 340A Power dissipation: 108.7W Case: TO252 Gate-source voltage: ±20V On-state resistance: 8mΩ Mounting: SMD Gate charge: 21nC Kind of package: reel; tape Kind of channel: enhancement |
на замовлення 99 шт: термін постачання 21-30 дні (днів) |
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WMO08N60C4 | WAYON |
Category: SMD N channel transistors Description: Transistor: N-MOSFET; WMOS™ C4; unipolar; 600V; 3.6A; Idm: 12A; 45W Type of transistor: N-MOSFET Technology: WMOS™ C4 Polarisation: unipolar Drain-source voltage: 600V Drain current: 3.6A Power dissipation: 45W Case: TO252 Gate-source voltage: ±30V On-state resistance: 780mΩ Mounting: SMD Kind of package: reel; tape Kind of channel: enhancement Pulsed drain current: 12A Gate charge: 7.3nC |
товару немає в наявності |
В кошику од. на суму грн. | |||||||||||||||
WMO08N65C4 | WAYON |
Category: SMD N channel transistors Description: Transistor: N-MOSFET; WMOS™ C4; unipolar; 650V; 3.6A; Idm: 12A; 45W Type of transistor: N-MOSFET Technology: WMOS™ C4 Polarisation: unipolar Drain-source voltage: 650V Drain current: 3.6A Pulsed drain current: 12A Power dissipation: 45W Case: TO252 Gate-source voltage: ±30V On-state resistance: 780mΩ Mounting: SMD Gate charge: 7.3nC Kind of package: reel; tape Kind of channel: enhancement |
товару немає в наявності |
В кошику од. на суму грн. | |||||||||||||||
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WMO08N80M3 | WAYON |
![]() Description: Transistor: N-MOSFET; WMOS™ M3; unipolar; 800V; 7A; 70W; TO252 Type of transistor: N-MOSFET Technology: WMOS™ M3 Polarisation: unipolar Drain-source voltage: 800V Drain current: 7A Power dissipation: 70W Case: TO252 Gate-source voltage: ±30V On-state resistance: 1.38Ω Mounting: SMD Kind of package: reel; tape Kind of channel: enhancement |
на замовлення 1949 шт: термін постачання 21-30 дні (днів) |
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WMO09N20DM | WAYON |
Category: SMD N channel transistors Description: Transistor: N-MOSFET; unipolar; 200V; 9A; Idm: 36A; 80W; TO252 Case: TO252 Mounting: SMD Gate-source voltage: ±20V Pulsed drain current: 36A Drain-source voltage: 200V Drain current: 9A On-state resistance: 0.3Ω Type of transistor: N-MOSFET Power dissipation: 80W Polarisation: unipolar Kind of package: reel; tape Gate charge: 41.3nC Kind of channel: enhancement |
на замовлення 290 шт: термін постачання 21-30 дні (днів) |
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WMO09N20DMH | WAYON |
Category: SMD N channel transistors Description: Transistor: N-MOSFET; unipolar; 200V; 9A; Idm: 36A; 80.6W; TO252 Case: TO252 Mounting: SMD Gate-source voltage: ±20V Pulsed drain current: 36A Drain-source voltage: 200V Drain current: 9A On-state resistance: 0.35Ω Type of transistor: N-MOSFET Power dissipation: 80.6W Polarisation: unipolar Kind of package: reel; tape Gate charge: 19.1nC Kind of channel: enhancement |
на замовлення 297 шт: термін постачання 21-30 дні (днів) |
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WMO100N07T1 | WAYON |
Category: SMD N channel transistors Description: Transistor: N-MOSFET; unipolar; 70V; 100A; Idm: 400A; 133W; TO252 Type of transistor: N-MOSFET Polarisation: unipolar Drain-source voltage: 70V Drain current: 100A Pulsed drain current: 400A Power dissipation: 133W Case: TO252 Gate-source voltage: ±20V On-state resistance: 7.4mΩ Mounting: SMD Gate charge: 92nC Kind of package: reel; tape Kind of channel: enhancement |
на замовлення 100 шт: термін постачання 21-30 дні (днів) |
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WMO10N100C2 | WAYON |
Category: SMD N channel transistors Description: Transistor: N-MOSFET; WMOS™ C2; unipolar; 1kV; 3.3A; Idm: 18A; 86W Type of transistor: N-MOSFET Technology: WMOS™ C2 Polarisation: unipolar Drain-source voltage: 1kV Drain current: 3.3A Pulsed drain current: 18A Power dissipation: 86W Case: TO252 Gate-source voltage: ±30V On-state resistance: 1.4Ω Mounting: SMD Gate charge: 18.8nC Kind of package: reel; tape Kind of channel: enhancement |
товару немає в наявності |
В кошику од. на суму грн. | |||||||||||||||
WMO10N50C4 | WAYON |
Category: SMD N channel transistors Description: Transistor: N-MOSFET; WMOS™ C4; unipolar; 500V; 4.8A; Idm: 16A; 45W Type of transistor: N-MOSFET Technology: WMOS™ C4 Polarisation: unipolar Drain-source voltage: 500V Drain current: 4.8A Pulsed drain current: 16A Power dissipation: 45W Case: TO252 Gate-source voltage: ±30V On-state resistance: 0.63Ω Mounting: SMD Gate charge: 7.3nC Kind of package: reel; tape Kind of channel: enhancement |
товару немає в наявності |
В кошику од. на суму грн. | |||||||||||||||
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WMO10N60C2 | WAYON |
![]() Description: Transistor: N-MOSFET; WMOS™ C2; unipolar; 600V; 8A; 57W; TO252 Type of transistor: N-MOSFET Polarisation: unipolar Drain-source voltage: 600V Drain current: 8A Power dissipation: 57W Case: TO252 Gate-source voltage: ±30V On-state resistance: 690mΩ Mounting: SMD Kind of package: reel; tape Kind of channel: enhancement Technology: WMOS™ C2 |
на замовлення 1801 шт: термін постачання 21-30 дні (днів) |
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WMO10N60C4 | WAYON |
Category: SMD N channel transistors Description: Transistor: N-MOSFET; WMOS™ C4; unipolar; 600V; 4.8A; Idm: 19A; 57W Type of transistor: N-MOSFET Polarisation: unipolar Drain-source voltage: 600V Drain current: 4.8A Pulsed drain current: 19A Power dissipation: 57W Case: TO252 Gate-source voltage: ±30V On-state resistance: 0.6Ω Mounting: SMD Gate charge: 9.6nC Kind of package: reel; tape Kind of channel: enhancement Technology: WMOS™ C4 |
товару немає в наявності |
В кошику од. на суму грн. | |||||||||||||||
WMO10N65C4 | WAYON |
Category: SMD N channel transistors Description: Transistor: N-MOSFET; WMOS™ C4; unipolar; 650V; 4.8A; Idm: 19A; 57W Type of transistor: N-MOSFET Technology: WMOS™ C4 Polarisation: unipolar Drain-source voltage: 650V Drain current: 4.8A Power dissipation: 57W Case: TO252 Gate-source voltage: ±30V On-state resistance: 0.6Ω Mounting: SMD Kind of package: reel; tape Kind of channel: enhancement Gate charge: 9.6nC Pulsed drain current: 19A |
товару немає в наявності |
В кошику од. на суму грн. | |||||||||||||||
WMO10N65EM | WAYON |
Category: SMD N channel transistors Description: Transistor: N-MOSFET; WMOS™ EM; unipolar; 650V; 4.8A; Idm: 24A; 63W Type of transistor: N-MOSFET Technology: WMOS™ EM Polarisation: unipolar Drain-source voltage: 650V Drain current: 4.8A Power dissipation: 63W Case: TO252 Gate-source voltage: ±30V On-state resistance: 0.6Ω Mounting: SMD Kind of package: reel; tape Kind of channel: enhancement Gate charge: 13.5nC Pulsed drain current: 24A |
товару немає в наявності |
В кошику од. на суму грн. | |||||||||||||||
WMO10N70C4 | WAYON |
Category: SMD N channel transistors Description: Transistor: N-MOSFET; WMOS™ C4; unipolar; 700V; 4.8A; Idm: 19A; 57W Type of transistor: N-MOSFET Technology: WMOS™ C4 Polarisation: unipolar Drain-source voltage: 700V Drain current: 4.8A Pulsed drain current: 19A Power dissipation: 57W Case: TO252 Gate-source voltage: ±30V On-state resistance: 0.6Ω Mounting: SMD Gate charge: 9.6nC Kind of package: reel; tape Kind of channel: enhancement |
товару немає в наявності |
В кошику од. на суму грн. | |||||||||||||||
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WMO10N80M3 | WAYON |
![]() Description: Transistor: N-MOSFET; WMOS™ M3; unipolar; 800V; 10A; 85W; TO252 Type of transistor: N-MOSFET Technology: WMOS™ M3 Polarisation: unipolar Drain-source voltage: 800V Drain current: 10A Power dissipation: 85W Case: TO252 Gate-source voltage: ±30V On-state resistance: 1.03Ω Mounting: SMD Kind of package: reel; tape Kind of channel: enhancement |
на замовлення 2191 шт: термін постачання 21-30 дні (днів) |
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WMO11N60C2 | WAYON |
![]() Description: Transistor: N-MOSFET; WMOS™ C2; unipolar; 600V; 9A; 63W; TO252 Type of transistor: N-MOSFET Technology: WMOS™ C2 Polarisation: unipolar Drain-source voltage: 600V Drain current: 9A Power dissipation: 63W Case: TO252 Gate-source voltage: ±30V On-state resistance: 0.54Ω Mounting: SMD Kind of package: reel; tape Kind of channel: enhancement |
на замовлення 2097 шт: термін постачання 21-30 дні (днів) |
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WMO11N65C2 | WAYON |
Category: SMD N channel transistors Description: Transistor: N-MOSFET; WMOS™ C2; unipolar; 650V; 9A; 63W; TO252 Type of transistor: N-MOSFET Technology: WMOS™ C2 Polarisation: unipolar Drain-source voltage: 650V Drain current: 9A Power dissipation: 63W Case: TO252 Gate-source voltage: ±30V On-state resistance: 0.54Ω Mounting: SMD Kind of package: reel; tape Kind of channel: enhancement |
на замовлення 39 шт: термін постачання 21-30 дні (днів) |
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WMO11N65SR | WAYON |
Category: SMD N channel transistors Description: Transistor: N-MOSFET; WMOS™ SR; unipolar; 650V; 5.4A; Idm: 19A; 63W Type of transistor: N-MOSFET Technology: WMOS™ SR Polarisation: unipolar Drain-source voltage: 650V Drain current: 5.4A Power dissipation: 63W Case: TO252 Gate-source voltage: ±30V On-state resistance: 0.6Ω Mounting: SMD Kind of package: reel; tape Kind of channel: enhancement Pulsed drain current: 19A Gate charge: 13.7nC |
товару немає в наявності |
В кошику од. на суму грн. | |||||||||||||||
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WMO11N70C2 | WAYON |
![]() Description: Transistor: N-MOSFET; WMOS™ C2; unipolar; 700V; 8A; 63W; TO252 Type of transistor: N-MOSFET Technology: WMOS™ C2 Polarisation: unipolar Drain-source voltage: 700V Drain current: 8A Power dissipation: 63W Case: TO252 Gate-source voltage: ±30V On-state resistance: 0.68Ω Mounting: SMD Kind of package: reel; tape Kind of channel: enhancement |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||||||||
WMO11N70SR | WAYON |
Category: SMD N channel transistors Description: Transistor: N-MOSFET; WMOS™ SR; unipolar; 700V; 5.4A; Idm: 19A; 63W Type of transistor: N-MOSFET Technology: WMOS™ SR Polarisation: unipolar Drain-source voltage: 700V Drain current: 5.4A Power dissipation: 63W Case: TO252 Gate-source voltage: ±30V On-state resistance: 620mΩ Mounting: SMD Kind of package: reel; tape Kind of channel: enhancement Gate charge: 13.7nC Pulsed drain current: 19A |
товару немає в наявності |
В кошику од. на суму грн. | |||||||||||||||
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WMO11N80M3 | WAYON |
Category: SMD N channel transistors Description: Transistor: N-MOSFET; WMOS™ M3; unipolar; 800V; 10.5A; 85W; TO252 Type of transistor: N-MOSFET Technology: WMOS™ M3 Polarisation: unipolar Drain-source voltage: 800V Drain current: 10.5A Power dissipation: 85W Case: TO252 Gate-source voltage: ±30V On-state resistance: 0.8Ω Mounting: SMD Kind of package: reel; tape Kind of channel: enhancement |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||||||||
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WMO120N04TS | WAYON |
Category: SMD N channel transistors Description: Transistor: N-MOSFET; unipolar; 40V; 120A; Idm: 480A; 96W; TO252 Type of transistor: N-MOSFET Polarisation: unipolar Drain-source voltage: 40V Drain current: 120A Pulsed drain current: 480A Power dissipation: 96W Case: TO252 Gate-source voltage: ±20V On-state resistance: 3.8mΩ Mounting: SMD Gate charge: 95nC Kind of package: reel; tape Kind of channel: enhancement |
на замовлення 166 шт: термін постачання 21-30 дні (днів) |
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WMO12N80M3 | WAYON |
![]() Description: Transistor: N-MOSFET; WMOS™ M3; unipolar; 800V; 12A; 86W; TO252 Type of transistor: N-MOSFET Technology: WMOS™ M3 Polarisation: unipolar Drain-source voltage: 800V Drain current: 12A Power dissipation: 86W Case: TO252 Gate-source voltage: ±30V On-state resistance: 620mΩ Mounting: SMD Kind of package: reel; tape Kind of channel: enhancement |
на замовлення 1096 шт: термін постачання 21-30 дні (днів) |
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WMO13N10TS | WAYON |
Category: SMD N channel transistors Description: Transistor: N-MOSFET; unipolar; 100V; 13A; Idm: 52A; 39W; TO252 Type of transistor: N-MOSFET Polarisation: unipolar Drain-source voltage: 100V Drain current: 13A Pulsed drain current: 52A Power dissipation: 39W Case: TO252 Gate-source voltage: ±20V On-state resistance: 0.13Ω Mounting: SMD Kind of package: reel; tape Kind of channel: enhancement Gate charge: 4nC |
на замовлення 650 шт: термін постачання 21-30 дні (днів) |
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WMO13N50C4 | WAYON |
Category: SMD N channel transistors Description: Transistor: N-MOSFET; WMOS™ C4; unipolar; 500V; 6A; Idm: 25A; 57W Type of transistor: N-MOSFET Polarisation: unipolar Drain-source voltage: 500V Drain current: 6A Case: TO252 Gate-source voltage: ±30V On-state resistance: 0.48Ω Mounting: SMD Kind of package: reel; tape Kind of channel: enhancement Power dissipation: 57W Gate charge: 9.6nC Technology: WMOS™ C4 Pulsed drain current: 25A |
товару немає в наявності |
В кошику од. на суму грн. | |||||||||||||||
WMO13N65EM | WAYON |
Category: SMD N channel transistors Description: Transistor: N-MOSFET; WMOS™ EM; unipolar; 650V; 6.5A; Idm: 35A; 85W Type of transistor: N-MOSFET Technology: WMOS™ EM Polarisation: unipolar Drain-source voltage: 650V Drain current: 6.5A Pulsed drain current: 35A Power dissipation: 85W Case: TO252 Gate-source voltage: ±30V On-state resistance: 390mΩ Mounting: SMD Gate charge: 20.3nC Kind of package: reel; tape Kind of channel: enhancement |
товару немає в наявності |
В кошику од. на суму грн. | |||||||||||||||
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WMO13N80M3 | WAYON |
![]() Description: Transistor: N-MOSFET; WMOS™ M3; unipolar; 800V; 13A; 130W; TO252 Type of transistor: N-MOSFET Technology: WMOS™ M3 Polarisation: unipolar Drain-source voltage: 800V Drain current: 13A Power dissipation: 130W Case: TO252 Gate-source voltage: ±30V On-state resistance: 0.48Ω Mounting: SMD Kind of package: reel; tape Kind of channel: enhancement |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||||||||
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WMO14N60C2 | WAYON |
![]() Description: Transistor: N-MOSFET; WMOS™ C2; unipolar; 600V; 11A; 85W; TO252 Type of transistor: N-MOSFET Polarisation: unipolar Drain-source voltage: 600V Drain current: 11A Power dissipation: 85W Case: TO252 Gate-source voltage: ±30V On-state resistance: 405mΩ Mounting: SMD Kind of package: reel; tape Kind of channel: enhancement Technology: WMOS™ C2 |
на замовлення 1623 шт: термін постачання 21-30 дні (днів) |
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WMO14N60C4 | WAYON |
Category: SMD N channel transistors Description: Transistor: N-MOSFET; WMOS™ C4; unipolar; 600V; 6A; Idm: 26A; 85W Type of transistor: N-MOSFET Polarisation: unipolar Drain-source voltage: 600V Drain current: 6A Pulsed drain current: 26A Power dissipation: 85W Case: TO252 Gate-source voltage: ±30V On-state resistance: 0.38Ω Mounting: SMD Gate charge: 13nC Kind of package: reel; tape Kind of channel: enhancement Technology: WMOS™ C4 |
товару немає в наявності |
В кошику од. на суму грн. | |||||||||||||||
WMO14N65C4 | WAYON |
![]() Description: Transistor: N-MOSFET; WMOS™ C4; unipolar; 650V; 6A; Idm: 26A; 85W Type of transistor: N-MOSFET Polarisation: unipolar Drain-source voltage: 650V Drain current: 6A Pulsed drain current: 26A Power dissipation: 85W Case: TO252 Gate-source voltage: ±30V On-state resistance: 0.38Ω Mounting: SMD Gate charge: 13nC Kind of package: reel; tape Kind of channel: enhancement Technology: WMOS™ C4 |
товару немає в наявності |
В кошику од. на суму грн. | |||||||||||||||
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WMO15N10T1 | WAYON |
Category: SMD N channel transistors Description: Transistor: N-MOSFET; unipolar; 100V; 15A; Idm: 60A; 41.7W; TO252 Type of transistor: N-MOSFET Polarisation: unipolar Drain-source voltage: 100V Drain current: 15A Pulsed drain current: 60A Power dissipation: 41.7W Case: TO252 Gate-source voltage: ±20V On-state resistance: 90mΩ Mounting: SMD Gate charge: 20.6nC Kind of package: reel; tape Kind of channel: enhancement |
на замовлення 979 шт: термін постачання 21-30 дні (днів) |
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WMO15N60C4 | WAYON |
Category: SMD N channel transistors Description: Transistor: N-MOSFET; WMOS™ C4; unipolar; 600V; 7.8A; Idm: 26A; 86W Type of transistor: N-MOSFET Technology: WMOS™ C4 Polarisation: unipolar Drain-source voltage: 600V Drain current: 7.8A Pulsed drain current: 26A Power dissipation: 86W Case: TO252 Gate-source voltage: ±30V On-state resistance: 0.3Ω Mounting: SMD Gate charge: 14.6nC Kind of package: reel; tape Kind of channel: enhancement |
товару немає в наявності |
В кошику од. на суму грн. | |||||||||||||||
WMO15N65C4 | WAYON |
Category: SMD N channel transistors Description: Transistor: N-MOSFET; WMOS™ C4; unipolar; 650V; 7.8A; Idm: 26A; 86W Type of transistor: N-MOSFET Technology: WMOS™ C4 Polarisation: unipolar Drain-source voltage: 650V Case: TO252 On-state resistance: 0.3Ω Mounting: SMD Kind of package: reel; tape Kind of channel: enhancement Power dissipation: 86W Gate charge: 14.6nC Gate-source voltage: ±30V Pulsed drain current: 26A Drain current: 7.8A |
товару немає в наявності |
В кошику од. на суму грн. | |||||||||||||||
WMO15N65F2 | WAYON |
Category: SMD N channel transistors Description: Transistor: N-MOSFET; WMOS™ F2; unipolar; 650V; 7.8A; Idm: 26A; 86W Type of transistor: N-MOSFET Technology: WMOS™ F2 Polarisation: unipolar Drain-source voltage: 650V Case: TO252 On-state resistance: 335mΩ Mounting: SMD Kind of package: reel; tape Kind of channel: enhancement Power dissipation: 86W Gate charge: 14.7nC Gate-source voltage: ±30V Pulsed drain current: 26A Drain current: 7.8A |
товару немає в наявності |
В кошику од. на суму грн. | |||||||||||||||
WMO15N70C4 | WAYON |
Category: SMD N channel transistors Description: Transistor: N-MOSFET; WMOS™ C4; unipolar; 700V; 7.8A; Idm: 26A; 86W Type of transistor: N-MOSFET Technology: WMOS™ C4 Polarisation: unipolar Drain-source voltage: 700V Drain current: 7.8A Power dissipation: 86W Case: TO252 Gate-source voltage: ±30V On-state resistance: 0.32Ω Mounting: SMD Kind of package: reel; tape Kind of channel: enhancement Pulsed drain current: 26A Gate charge: 14.6nC |
товару немає в наявності |
В кошику од. на суму грн. | |||||||||||||||
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WMO16N60FD | WAYON |
![]() Description: Transistor: N-MOSFET; WMOS™ FD; unipolar; 600V; 13A; 86W; TO252 Type of transistor: N-MOSFET Technology: WMOS™ FD Polarisation: unipolar Drain-source voltage: 600V Drain current: 13A Power dissipation: 86W Case: TO252 Gate-source voltage: ±30V On-state resistance: 0.32Ω Mounting: SMD Kind of package: reel; tape Kind of channel: enhancement |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||||||||
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WMO16N65C2 | WAYON |
![]() Description: Transistor: N-MOSFET; WMOS™ C2; unipolar; 650V; 13A; 86W; TO252 Type of transistor: N-MOSFET Technology: WMOS™ C2 Polarisation: unipolar Drain-source voltage: 650V Drain current: 13A Power dissipation: 86W Case: TO252 Gate-source voltage: ±30V On-state resistance: 0.32Ω Mounting: SMD Kind of package: reel; tape Kind of channel: enhancement |
на замовлення 148 шт: термін постачання 21-30 дні (днів) |
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WMO16N65FD | WAYON |
![]() Description: Transistor: N-MOSFET; WMOS™ FD; unipolar; 650V; 13A; 86W; TO252 Type of transistor: N-MOSFET Technology: WMOS™ FD Polarisation: unipolar Drain-source voltage: 650V Drain current: 13A Power dissipation: 86W Case: TO252 Gate-source voltage: ±30V On-state resistance: 0.32Ω Mounting: SMD Kind of package: reel; tape Kind of channel: enhancement |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||||||||
WMO16N65SR | WAYON |
Category: SMD N channel transistors Description: Transistor: N-MOSFET; WMOS™ SR; unipolar; 650V; 8.4A; Idm: 35A; 86W Type of transistor: N-MOSFET Technology: WMOS™ SR Polarisation: unipolar Drain-source voltage: 650V Drain current: 8.4A Pulsed drain current: 35A Power dissipation: 86W Case: TO252 Gate-source voltage: ±30V On-state resistance: 0.35Ω Mounting: SMD Gate charge: 19.5nC Kind of package: reel; tape Kind of channel: enhancement |
товару немає в наявності |
В кошику од. на суму грн. | |||||||||||||||
WMO16N70SR | WAYON |
Category: SMD N channel transistors Description: Transistor: N-MOSFET; WMOS™ SR; unipolar; 700V; 8.4A; Idm: 35A; 86W Type of transistor: N-MOSFET Technology: WMOS™ SR Polarisation: unipolar Drain-source voltage: 700V Drain current: 8.4A Power dissipation: 86W Case: TO252 Gate-source voltage: ±30V On-state resistance: 0.36Ω Mounting: SMD Kind of package: reel; tape Kind of channel: enhancement Pulsed drain current: 35A Gate charge: 19.5nC |
товару немає в наявності |
В кошику од. на суму грн. | |||||||||||||||
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WMO175N10HG4 | WAYON |
Category: SMD N channel transistors Description: Transistor: N-MOSFET; unipolar; 100V; 45A; Idm: 180A; 67.5W; TO252 Type of transistor: N-MOSFET Polarisation: unipolar Drain-source voltage: 100V Drain current: 45A Pulsed drain current: 180A Power dissipation: 67.5W Case: TO252 Gate-source voltage: ±20V On-state resistance: 17.5mΩ Mounting: SMD Gate charge: 17nC Kind of package: reel; tape Kind of channel: enhancement |
на замовлення 200 шт: термін постачання 21-30 дні (днів) |
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WMO175N10LG4 | WAYON |
Category: SMD N channel transistors Description: Transistor: N-MOSFET; unipolar; 100V; 45A; Idm: 180A; 67.5W; TO252 Type of transistor: N-MOSFET Polarisation: unipolar Drain-source voltage: 100V Drain current: 45A Pulsed drain current: 180A Power dissipation: 67.5W Case: TO252 Gate-source voltage: ±20V On-state resistance: 17mΩ Mounting: SMD Gate charge: 22.5nC Kind of package: reel; tape Kind of channel: enhancement |
на замовлення 200 шт: термін постачання 21-30 дні (днів) |
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WMO18N20T2 | WAYON |
Category: SMD N channel transistors Description: Transistor: N-MOSFET; unipolar; 200V; 18A; Idm: 72A; 83W; TO252 Case: TO252 Mounting: SMD Kind of package: reel; tape Gate charge: 11nC Kind of channel: enhancement Gate-source voltage: ±20V Pulsed drain current: 72A Drain-source voltage: 200V Drain current: 18A On-state resistance: 0.13Ω Type of transistor: N-MOSFET Power dissipation: 83W Polarisation: unipolar |
на замовлення 90 шт: термін постачання 21-30 дні (днів) |
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WMO18N50C4 | WAYON |
Category: SMD N channel transistors Description: Transistor: N-MOSFET; WMOS™ C4; unipolar; 500V; 10A; Idm: 50A; 75W Type of transistor: N-MOSFET Technology: WMOS™ C4 Polarisation: unipolar Drain-source voltage: 500V Drain current: 10A Pulsed drain current: 50A Power dissipation: 75W Case: TO252 Gate-source voltage: ±30V On-state resistance: 0.3Ω Mounting: SMD Gate charge: 13nC Kind of package: reel; tape Kind of channel: enhancement |
товару немає в наявності |
В кошику од. на суму грн. | |||||||||||||||
WMO18N65EM | WAYON |
Category: SMD N channel transistors Description: Transistor: N-MOSFET; WMOS™ EM; unipolar; 650V; 8.6A; Idm: 43A; 125W Type of transistor: N-MOSFET Technology: WMOS™ EM Polarisation: unipolar Drain-source voltage: 650V Drain current: 8.6A Pulsed drain current: 43A Power dissipation: 125W Case: TO252 Gate-source voltage: ±30V On-state resistance: 0.28Ω Mounting: SMD Gate charge: 26nC Kind of package: reel; tape Kind of channel: enhancement |
товару немає в наявності |
В кошику од. на суму грн. | |||||||||||||||
WMO18N70EM | WAYON |
Category: SMD N channel transistors Description: Transistor: N-MOSFET; WMOS™ EM; unipolar; 700V; 8.6A; Idm: 43A; 125W Type of transistor: N-MOSFET Technology: WMOS™ EM Polarisation: unipolar Drain-source voltage: 700V Drain current: 8.6A Pulsed drain current: 43A Power dissipation: 125W Case: TO252 Gate-source voltage: ±30V On-state resistance: 0.28Ω Mounting: SMD Gate charge: 26nC Kind of package: reel; tape Kind of channel: enhancement |
товару немає в наявності |
В кошику од. на суму грн. | |||||||||||||||
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WMO18P10TS | WAYON |
Category: SMD P channel transistors Description: Transistor: P-MOSFET; unipolar; -100V; -18A; Idm: -72A; 70W; TO252 Type of transistor: P-MOSFET Polarisation: unipolar Drain-source voltage: -100V Drain current: -18A Pulsed drain current: -72A Power dissipation: 70W Case: TO252 Gate-source voltage: ±20V On-state resistance: 0.1Ω Mounting: SMD Kind of package: reel; tape Kind of channel: enhancement Gate charge: 65nC |
на замовлення 500 шт: термін постачання 21-30 дні (днів) |
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WMO190N03TS | WAYON |
Category: SMD N channel transistors Description: Transistor: N-MOSFET; unipolar; 30V; 190A; Idm: 760A; 166.7W; TO252 Type of transistor: N-MOSFET Polarisation: unipolar Drain-source voltage: 30V Drain current: 190A Pulsed drain current: 760A Power dissipation: 166.7W Case: TO252 Gate-source voltage: ±20V On-state resistance: 3mΩ Mounting: SMD Gate charge: 0.1µC Kind of package: reel; tape Kind of channel: enhancement |
на замовлення 73 шт: термін постачання 21-30 дні (днів) |
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WMO20N65EM | WAYON |
Category: SMD N channel transistors Description: Transistor: N-MOSFET; WMOS™ EM; unipolar; 650V; TO252 Type of transistor: N-MOSFET Technology: WMOS™ EM Polarisation: unipolar Drain-source voltage: 650V Case: TO252 On-state resistance: 0.24Ω Mounting: SMD Kind of package: reel; tape Kind of channel: enhancement |
товару немає в наявності |
В кошику од. на суму грн. | |||||||||||||||
WMO22N50C4 | WAYON |
Category: SMD N channel transistors Description: Transistor: N-MOSFET; WMOS™ C4; unipolar; 500V; 11A; Idm: 60A; 86W Type of transistor: N-MOSFET Technology: WMOS™ C4 Polarisation: unipolar Drain-source voltage: 500V Drain current: 11A Pulsed drain current: 60A Power dissipation: 86W Case: TO252 Gate-source voltage: ±30V On-state resistance: 0.27Ω Mounting: SMD Gate charge: 14.6nC Kind of package: reel; tape Kind of channel: enhancement |
товару немає в наявності |
В кошику од. на суму грн. | |||||||||||||||
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WMO240N10LG2 | WAYON |
Category: SMD N channel transistors Description: Transistor: N-MOSFET; unipolar; 100V; 36A; Idm: 144A; 56.8W; TO252 Type of transistor: N-MOSFET Polarisation: unipolar Drain-source voltage: 100V Drain current: 36A Pulsed drain current: 144A Power dissipation: 56.8W Case: TO252 Gate-source voltage: ±20V On-state resistance: 22mΩ Mounting: SMD Gate charge: 15.8nC Kind of package: reel; tape Kind of channel: enhancement |
на замовлення 455 шт: термін постачання 21-30 дні (днів) |
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WMO25N10T1 | WAYON |
Category: SMD N channel transistors Description: Transistor: N-MOSFET; unipolar; 100V; 25A; Idm: 100A; 53.2W; TO252 Type of transistor: N-MOSFET Polarisation: unipolar Drain-source voltage: 100V Drain current: 25A Pulsed drain current: 100A Power dissipation: 53.2W Case: TO252 Gate-source voltage: ±20V On-state resistance: 44mΩ Mounting: SMD Gate charge: 37.9nC Kind of package: reel; tape Kind of channel: enhancement |
на замовлення 500 шт: термін постачання 21-30 дні (днів) |
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WMO25N50C4 | WAYON |
Category: SMD N channel transistors Description: Transistor: N-MOSFET; WMOS™ C4; unipolar; 500V; 13A; Idm: 65A; 135W Type of transistor: N-MOSFET Technology: WMOS™ C4 Polarisation: unipolar Drain-source voltage: 500V Drain current: 13A Pulsed drain current: 65A Power dissipation: 135W Case: TO252 Gate-source voltage: ±30V On-state resistance: 0.16Ω Mounting: SMD Gate charge: 22.1nC Kind of package: reel; tape Kind of channel: enhancement |
товару немає в наявності |
В кошику од. на суму грн. |
WMO06N80M3 |
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Виробник: WAYON
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; WMOS™ M3; unipolar; 800V; 5A; 50W; TO252
Type of transistor: N-MOSFET
Technology: WMOS™ M3
Polarisation: unipolar
Drain-source voltage: 800V
Drain current: 5A
Power dissipation: 50W
Case: TO252
Gate-source voltage: ±30V
On-state resistance: 2Ω
Mounting: SMD
Kind of package: reel; tape
Kind of channel: enhancement
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; WMOS™ M3; unipolar; 800V; 5A; 50W; TO252
Type of transistor: N-MOSFET
Technology: WMOS™ M3
Polarisation: unipolar
Drain-source voltage: 800V
Drain current: 5A
Power dissipation: 50W
Case: TO252
Gate-source voltage: ±30V
On-state resistance: 2Ω
Mounting: SMD
Kind of package: reel; tape
Kind of channel: enhancement
товару немає в наявності
В кошику
од. на суму грн.
WMO07N60C2 |
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Виробник: WAYON
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; WMOS™ C2; unipolar; 600V; 5A; 42W; TO252
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 600V
Drain current: 5A
Power dissipation: 42W
Case: TO252
Gate-source voltage: ±30V
On-state resistance: 1.14Ω
Mounting: SMD
Kind of package: reel; tape
Kind of channel: enhancement
Technology: WMOS™ C2
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; WMOS™ C2; unipolar; 600V; 5A; 42W; TO252
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 600V
Drain current: 5A
Power dissipation: 42W
Case: TO252
Gate-source voltage: ±30V
On-state resistance: 1.14Ω
Mounting: SMD
Kind of package: reel; tape
Kind of channel: enhancement
Technology: WMOS™ C2
на замовлення 195 шт:
термін постачання 21-30 дні (днів)Кількість | Ціна |
---|---|
7+ | 65.04 грн |
16+ | 24.46 грн |
25+ | 21.18 грн |
45+ | 20.41 грн |
100+ | 19.88 грн |
122+ | 19.27 грн |
WMO07N60C4 |
Виробник: WAYON
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; WMOS™ C4; unipolar; 600V; 2.8A; Idm: 9A; 42W
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 600V
Drain current: 2.8A
Pulsed drain current: 9A
Power dissipation: 42W
Case: TO252
Gate-source voltage: ±30V
On-state resistance: 1.14Ω
Mounting: SMD
Gate charge: 5.2nC
Kind of package: reel; tape
Kind of channel: enhancement
Technology: WMOS™ C4
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; WMOS™ C4; unipolar; 600V; 2.8A; Idm: 9A; 42W
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 600V
Drain current: 2.8A
Pulsed drain current: 9A
Power dissipation: 42W
Case: TO252
Gate-source voltage: ±30V
On-state resistance: 1.14Ω
Mounting: SMD
Gate charge: 5.2nC
Kind of package: reel; tape
Kind of channel: enhancement
Technology: WMOS™ C4
товару немає в наявності
В кошику
од. на суму грн.
WMO07N65C2 |
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Виробник: WAYON
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; WMOS™ C2; unipolar; 650V; 5A; 42W; TO252
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 650V
Drain current: 5A
Power dissipation: 42W
Case: TO252
Gate-source voltage: ±30V
On-state resistance: 1.14Ω
Mounting: SMD
Kind of package: reel; tape
Kind of channel: enhancement
Technology: WMOS™ C2
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; WMOS™ C2; unipolar; 650V; 5A; 42W; TO252
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 650V
Drain current: 5A
Power dissipation: 42W
Case: TO252
Gate-source voltage: ±30V
On-state resistance: 1.14Ω
Mounting: SMD
Kind of package: reel; tape
Kind of channel: enhancement
Technology: WMOS™ C2
на замовлення 328 шт:
термін постачання 21-30 дні (днів)Кількість | Ціна |
---|---|
11+ | 39.52 грн |
18+ | 22.02 грн |
25+ | 19.42 грн |
43+ | 19.34 грн |
WMO07N65C4 |
Виробник: WAYON
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; WMOS™ C4; unipolar; 650V; 2.8A; Idm: 9A; 42W
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 650V
Drain current: 2.8A
Pulsed drain current: 9A
Power dissipation: 42W
Case: TO252
Gate-source voltage: ±30V
On-state resistance: 1.14Ω
Mounting: SMD
Gate charge: 5.2nC
Kind of package: reel; tape
Kind of channel: enhancement
Technology: WMOS™ C4
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; WMOS™ C4; unipolar; 650V; 2.8A; Idm: 9A; 42W
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 650V
Drain current: 2.8A
Pulsed drain current: 9A
Power dissipation: 42W
Case: TO252
Gate-source voltage: ±30V
On-state resistance: 1.14Ω
Mounting: SMD
Gate charge: 5.2nC
Kind of package: reel; tape
Kind of channel: enhancement
Technology: WMOS™ C4
товару немає в наявності
В кошику
од. на суму грн.
WMO07N70C4 |
Виробник: WAYON
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; WMOS™ C4; unipolar; 700V; 2.8A; Idm: 9A; 42W
Type of transistor: N-MOSFET
Technology: WMOS™ C4
Polarisation: unipolar
Drain-source voltage: 700V
Drain current: 2.8A
Power dissipation: 42W
Case: TO252
Gate-source voltage: ±30V
On-state resistance: 1.14Ω
Mounting: SMD
Kind of package: reel; tape
Kind of channel: enhancement
Pulsed drain current: 9A
Gate charge: 5.2nC
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; WMOS™ C4; unipolar; 700V; 2.8A; Idm: 9A; 42W
Type of transistor: N-MOSFET
Technology: WMOS™ C4
Polarisation: unipolar
Drain-source voltage: 700V
Drain current: 2.8A
Power dissipation: 42W
Case: TO252
Gate-source voltage: ±30V
On-state resistance: 1.14Ω
Mounting: SMD
Kind of package: reel; tape
Kind of channel: enhancement
Pulsed drain current: 9A
Gate charge: 5.2nC
товару немає в наявності
В кошику
од. на суму грн.
WMO07N80M3 |
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Виробник: WAYON
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; WMOS™ M3; unipolar; 800V; 6.8A; 55W; TO252
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 800V
Drain current: 6.8A
Power dissipation: 55W
Case: TO252
Gate-source voltage: ±30V
On-state resistance: 1.8Ω
Mounting: SMD
Kind of package: reel; tape
Kind of channel: enhancement
Technology: WMOS™ M3
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; WMOS™ M3; unipolar; 800V; 6.8A; 55W; TO252
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 800V
Drain current: 6.8A
Power dissipation: 55W
Case: TO252
Gate-source voltage: ±30V
On-state resistance: 1.8Ω
Mounting: SMD
Kind of package: reel; tape
Kind of channel: enhancement
Technology: WMOS™ M3
товару немає в наявності
В кошику
од. на суму грн.
WMO080N10HG2 |
Виробник: WAYON
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 100V; 53.7A; Idm: 340A; 108.7W
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 100V
Drain current: 53.7A
Pulsed drain current: 340A
Power dissipation: 108.7W
Case: TO252
Gate-source voltage: ±20V
On-state resistance: 8mΩ
Mounting: SMD
Gate charge: 21nC
Kind of package: reel; tape
Kind of channel: enhancement
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 100V; 53.7A; Idm: 340A; 108.7W
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 100V
Drain current: 53.7A
Pulsed drain current: 340A
Power dissipation: 108.7W
Case: TO252
Gate-source voltage: ±20V
On-state resistance: 8mΩ
Mounting: SMD
Gate charge: 21nC
Kind of package: reel; tape
Kind of channel: enhancement
на замовлення 99 шт:
термін постачання 21-30 дні (днів)Кількість | Ціна |
---|---|
7+ | 64.22 грн |
10+ | 40.98 грн |
25+ | 38.68 грн |
29+ | 31.34 грн |
79+ | 29.66 грн |
WMO08N60C4 |
Виробник: WAYON
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; WMOS™ C4; unipolar; 600V; 3.6A; Idm: 12A; 45W
Type of transistor: N-MOSFET
Technology: WMOS™ C4
Polarisation: unipolar
Drain-source voltage: 600V
Drain current: 3.6A
Power dissipation: 45W
Case: TO252
Gate-source voltage: ±30V
On-state resistance: 780mΩ
Mounting: SMD
Kind of package: reel; tape
Kind of channel: enhancement
Pulsed drain current: 12A
Gate charge: 7.3nC
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; WMOS™ C4; unipolar; 600V; 3.6A; Idm: 12A; 45W
Type of transistor: N-MOSFET
Technology: WMOS™ C4
Polarisation: unipolar
Drain-source voltage: 600V
Drain current: 3.6A
Power dissipation: 45W
Case: TO252
Gate-source voltage: ±30V
On-state resistance: 780mΩ
Mounting: SMD
Kind of package: reel; tape
Kind of channel: enhancement
Pulsed drain current: 12A
Gate charge: 7.3nC
товару немає в наявності
В кошику
од. на суму грн.
WMO08N65C4 |
Виробник: WAYON
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; WMOS™ C4; unipolar; 650V; 3.6A; Idm: 12A; 45W
Type of transistor: N-MOSFET
Technology: WMOS™ C4
Polarisation: unipolar
Drain-source voltage: 650V
Drain current: 3.6A
Pulsed drain current: 12A
Power dissipation: 45W
Case: TO252
Gate-source voltage: ±30V
On-state resistance: 780mΩ
Mounting: SMD
Gate charge: 7.3nC
Kind of package: reel; tape
Kind of channel: enhancement
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; WMOS™ C4; unipolar; 650V; 3.6A; Idm: 12A; 45W
Type of transistor: N-MOSFET
Technology: WMOS™ C4
Polarisation: unipolar
Drain-source voltage: 650V
Drain current: 3.6A
Pulsed drain current: 12A
Power dissipation: 45W
Case: TO252
Gate-source voltage: ±30V
On-state resistance: 780mΩ
Mounting: SMD
Gate charge: 7.3nC
Kind of package: reel; tape
Kind of channel: enhancement
товару немає в наявності
В кошику
од. на суму грн.
WMO08N80M3 |
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Виробник: WAYON
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; WMOS™ M3; unipolar; 800V; 7A; 70W; TO252
Type of transistor: N-MOSFET
Technology: WMOS™ M3
Polarisation: unipolar
Drain-source voltage: 800V
Drain current: 7A
Power dissipation: 70W
Case: TO252
Gate-source voltage: ±30V
On-state resistance: 1.38Ω
Mounting: SMD
Kind of package: reel; tape
Kind of channel: enhancement
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; WMOS™ M3; unipolar; 800V; 7A; 70W; TO252
Type of transistor: N-MOSFET
Technology: WMOS™ M3
Polarisation: unipolar
Drain-source voltage: 800V
Drain current: 7A
Power dissipation: 70W
Case: TO252
Gate-source voltage: ±30V
On-state resistance: 1.38Ω
Mounting: SMD
Kind of package: reel; tape
Kind of channel: enhancement
на замовлення 1949 шт:
термін постачання 21-30 дні (днів)Кількість | Ціна |
---|---|
14+ | 31.29 грн |
15+ | 26.45 грн |
91+ | 25.92 грн |
100+ | 25.30 грн |
250+ | 24.85 грн |
WMO09N20DM |
Виробник: WAYON
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 200V; 9A; Idm: 36A; 80W; TO252
Case: TO252
Mounting: SMD
Gate-source voltage: ±20V
Pulsed drain current: 36A
Drain-source voltage: 200V
Drain current: 9A
On-state resistance: 0.3Ω
Type of transistor: N-MOSFET
Power dissipation: 80W
Polarisation: unipolar
Kind of package: reel; tape
Gate charge: 41.3nC
Kind of channel: enhancement
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 200V; 9A; Idm: 36A; 80W; TO252
Case: TO252
Mounting: SMD
Gate-source voltage: ±20V
Pulsed drain current: 36A
Drain-source voltage: 200V
Drain current: 9A
On-state resistance: 0.3Ω
Type of transistor: N-MOSFET
Power dissipation: 80W
Polarisation: unipolar
Kind of package: reel; tape
Gate charge: 41.3nC
Kind of channel: enhancement
на замовлення 290 шт:
термін постачання 21-30 дні (днів)Кількість | Ціна |
---|---|
13+ | 33.76 грн |
24+ | 16.44 грн |
26+ | 14.83 грн |
75+ | 12.00 грн |
206+ | 11.31 грн |
WMO09N20DMH |
Виробник: WAYON
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 200V; 9A; Idm: 36A; 80.6W; TO252
Case: TO252
Mounting: SMD
Gate-source voltage: ±20V
Pulsed drain current: 36A
Drain-source voltage: 200V
Drain current: 9A
On-state resistance: 0.35Ω
Type of transistor: N-MOSFET
Power dissipation: 80.6W
Polarisation: unipolar
Kind of package: reel; tape
Gate charge: 19.1nC
Kind of channel: enhancement
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 200V; 9A; Idm: 36A; 80.6W; TO252
Case: TO252
Mounting: SMD
Gate-source voltage: ±20V
Pulsed drain current: 36A
Drain-source voltage: 200V
Drain current: 9A
On-state resistance: 0.35Ω
Type of transistor: N-MOSFET
Power dissipation: 80.6W
Polarisation: unipolar
Kind of package: reel; tape
Gate charge: 19.1nC
Kind of channel: enhancement
на замовлення 297 шт:
термін постачання 21-30 дні (днів)Кількість | Ціна |
---|---|
13+ | 33.76 грн |
24+ | 16.59 грн |
26+ | 14.91 грн |
74+ | 12.08 грн |
204+ | 11.47 грн |
WMO100N07T1 |
Виробник: WAYON
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 70V; 100A; Idm: 400A; 133W; TO252
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 70V
Drain current: 100A
Pulsed drain current: 400A
Power dissipation: 133W
Case: TO252
Gate-source voltage: ±20V
On-state resistance: 7.4mΩ
Mounting: SMD
Gate charge: 92nC
Kind of package: reel; tape
Kind of channel: enhancement
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 70V; 100A; Idm: 400A; 133W; TO252
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 70V
Drain current: 100A
Pulsed drain current: 400A
Power dissipation: 133W
Case: TO252
Gate-source voltage: ±20V
On-state resistance: 7.4mΩ
Mounting: SMD
Gate charge: 92nC
Kind of package: reel; tape
Kind of channel: enhancement
на замовлення 100 шт:
термін постачання 21-30 дні (днів)Кількість | Ціна |
---|---|
7+ | 64.22 грн |
11+ | 35.55 грн |
25+ | 32.03 грн |
35+ | 26.22 грн |
95+ | 24.77 грн |
WMO10N100C2 |
Виробник: WAYON
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; WMOS™ C2; unipolar; 1kV; 3.3A; Idm: 18A; 86W
Type of transistor: N-MOSFET
Technology: WMOS™ C2
Polarisation: unipolar
Drain-source voltage: 1kV
Drain current: 3.3A
Pulsed drain current: 18A
Power dissipation: 86W
Case: TO252
Gate-source voltage: ±30V
On-state resistance: 1.4Ω
Mounting: SMD
Gate charge: 18.8nC
Kind of package: reel; tape
Kind of channel: enhancement
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; WMOS™ C2; unipolar; 1kV; 3.3A; Idm: 18A; 86W
Type of transistor: N-MOSFET
Technology: WMOS™ C2
Polarisation: unipolar
Drain-source voltage: 1kV
Drain current: 3.3A
Pulsed drain current: 18A
Power dissipation: 86W
Case: TO252
Gate-source voltage: ±30V
On-state resistance: 1.4Ω
Mounting: SMD
Gate charge: 18.8nC
Kind of package: reel; tape
Kind of channel: enhancement
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WMO10N50C4 |
Виробник: WAYON
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; WMOS™ C4; unipolar; 500V; 4.8A; Idm: 16A; 45W
Type of transistor: N-MOSFET
Technology: WMOS™ C4
Polarisation: unipolar
Drain-source voltage: 500V
Drain current: 4.8A
Pulsed drain current: 16A
Power dissipation: 45W
Case: TO252
Gate-source voltage: ±30V
On-state resistance: 0.63Ω
Mounting: SMD
Gate charge: 7.3nC
Kind of package: reel; tape
Kind of channel: enhancement
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; WMOS™ C4; unipolar; 500V; 4.8A; Idm: 16A; 45W
Type of transistor: N-MOSFET
Technology: WMOS™ C4
Polarisation: unipolar
Drain-source voltage: 500V
Drain current: 4.8A
Pulsed drain current: 16A
Power dissipation: 45W
Case: TO252
Gate-source voltage: ±30V
On-state resistance: 0.63Ω
Mounting: SMD
Gate charge: 7.3nC
Kind of package: reel; tape
Kind of channel: enhancement
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WMO10N60C2 |
![]() |
Виробник: WAYON
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; WMOS™ C2; unipolar; 600V; 8A; 57W; TO252
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 600V
Drain current: 8A
Power dissipation: 57W
Case: TO252
Gate-source voltage: ±30V
On-state resistance: 690mΩ
Mounting: SMD
Kind of package: reel; tape
Kind of channel: enhancement
Technology: WMOS™ C2
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; WMOS™ C2; unipolar; 600V; 8A; 57W; TO252
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 600V
Drain current: 8A
Power dissipation: 57W
Case: TO252
Gate-source voltage: ±30V
On-state resistance: 690mΩ
Mounting: SMD
Kind of package: reel; tape
Kind of channel: enhancement
Technology: WMOS™ C2
на замовлення 1801 шт:
термін постачання 21-30 дні (днів)Кількість | Ціна |
---|---|
14+ | 31.29 грн |
16+ | 25.38 грн |
25+ | 22.63 грн |
100+ | 20.95 грн |
WMO10N60C4 |
Виробник: WAYON
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; WMOS™ C4; unipolar; 600V; 4.8A; Idm: 19A; 57W
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 600V
Drain current: 4.8A
Pulsed drain current: 19A
Power dissipation: 57W
Case: TO252
Gate-source voltage: ±30V
On-state resistance: 0.6Ω
Mounting: SMD
Gate charge: 9.6nC
Kind of package: reel; tape
Kind of channel: enhancement
Technology: WMOS™ C4
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; WMOS™ C4; unipolar; 600V; 4.8A; Idm: 19A; 57W
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 600V
Drain current: 4.8A
Pulsed drain current: 19A
Power dissipation: 57W
Case: TO252
Gate-source voltage: ±30V
On-state resistance: 0.6Ω
Mounting: SMD
Gate charge: 9.6nC
Kind of package: reel; tape
Kind of channel: enhancement
Technology: WMOS™ C4
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WMO10N65C4 |
Виробник: WAYON
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; WMOS™ C4; unipolar; 650V; 4.8A; Idm: 19A; 57W
Type of transistor: N-MOSFET
Technology: WMOS™ C4
Polarisation: unipolar
Drain-source voltage: 650V
Drain current: 4.8A
Power dissipation: 57W
Case: TO252
Gate-source voltage: ±30V
On-state resistance: 0.6Ω
Mounting: SMD
Kind of package: reel; tape
Kind of channel: enhancement
Gate charge: 9.6nC
Pulsed drain current: 19A
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; WMOS™ C4; unipolar; 650V; 4.8A; Idm: 19A; 57W
Type of transistor: N-MOSFET
Technology: WMOS™ C4
Polarisation: unipolar
Drain-source voltage: 650V
Drain current: 4.8A
Power dissipation: 57W
Case: TO252
Gate-source voltage: ±30V
On-state resistance: 0.6Ω
Mounting: SMD
Kind of package: reel; tape
Kind of channel: enhancement
Gate charge: 9.6nC
Pulsed drain current: 19A
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WMO10N65EM |
Виробник: WAYON
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; WMOS™ EM; unipolar; 650V; 4.8A; Idm: 24A; 63W
Type of transistor: N-MOSFET
Technology: WMOS™ EM
Polarisation: unipolar
Drain-source voltage: 650V
Drain current: 4.8A
Power dissipation: 63W
Case: TO252
Gate-source voltage: ±30V
On-state resistance: 0.6Ω
Mounting: SMD
Kind of package: reel; tape
Kind of channel: enhancement
Gate charge: 13.5nC
Pulsed drain current: 24A
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; WMOS™ EM; unipolar; 650V; 4.8A; Idm: 24A; 63W
Type of transistor: N-MOSFET
Technology: WMOS™ EM
Polarisation: unipolar
Drain-source voltage: 650V
Drain current: 4.8A
Power dissipation: 63W
Case: TO252
Gate-source voltage: ±30V
On-state resistance: 0.6Ω
Mounting: SMD
Kind of package: reel; tape
Kind of channel: enhancement
Gate charge: 13.5nC
Pulsed drain current: 24A
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WMO10N70C4 |
Виробник: WAYON
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; WMOS™ C4; unipolar; 700V; 4.8A; Idm: 19A; 57W
Type of transistor: N-MOSFET
Technology: WMOS™ C4
Polarisation: unipolar
Drain-source voltage: 700V
Drain current: 4.8A
Pulsed drain current: 19A
Power dissipation: 57W
Case: TO252
Gate-source voltage: ±30V
On-state resistance: 0.6Ω
Mounting: SMD
Gate charge: 9.6nC
Kind of package: reel; tape
Kind of channel: enhancement
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; WMOS™ C4; unipolar; 700V; 4.8A; Idm: 19A; 57W
Type of transistor: N-MOSFET
Technology: WMOS™ C4
Polarisation: unipolar
Drain-source voltage: 700V
Drain current: 4.8A
Pulsed drain current: 19A
Power dissipation: 57W
Case: TO252
Gate-source voltage: ±30V
On-state resistance: 0.6Ω
Mounting: SMD
Gate charge: 9.6nC
Kind of package: reel; tape
Kind of channel: enhancement
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WMO10N80M3 |
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Виробник: WAYON
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; WMOS™ M3; unipolar; 800V; 10A; 85W; TO252
Type of transistor: N-MOSFET
Technology: WMOS™ M3
Polarisation: unipolar
Drain-source voltage: 800V
Drain current: 10A
Power dissipation: 85W
Case: TO252
Gate-source voltage: ±30V
On-state resistance: 1.03Ω
Mounting: SMD
Kind of package: reel; tape
Kind of channel: enhancement
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; WMOS™ M3; unipolar; 800V; 10A; 85W; TO252
Type of transistor: N-MOSFET
Technology: WMOS™ M3
Polarisation: unipolar
Drain-source voltage: 800V
Drain current: 10A
Power dissipation: 85W
Case: TO252
Gate-source voltage: ±30V
On-state resistance: 1.03Ω
Mounting: SMD
Kind of package: reel; tape
Kind of channel: enhancement
на замовлення 2191 шт:
термін постачання 21-30 дні (днів)Кількість | Ціна |
---|---|
10+ | 38.22 грн |
25+ | 36.08 грн |
69+ | 34.10 грн |
250+ | 33.26 грн |
500+ | 32.80 грн |
WMO11N60C2 |
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Виробник: WAYON
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; WMOS™ C2; unipolar; 600V; 9A; 63W; TO252
Type of transistor: N-MOSFET
Technology: WMOS™ C2
Polarisation: unipolar
Drain-source voltage: 600V
Drain current: 9A
Power dissipation: 63W
Case: TO252
Gate-source voltage: ±30V
On-state resistance: 0.54Ω
Mounting: SMD
Kind of package: reel; tape
Kind of channel: enhancement
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; WMOS™ C2; unipolar; 600V; 9A; 63W; TO252
Type of transistor: N-MOSFET
Technology: WMOS™ C2
Polarisation: unipolar
Drain-source voltage: 600V
Drain current: 9A
Power dissipation: 63W
Case: TO252
Gate-source voltage: ±30V
On-state resistance: 0.54Ω
Mounting: SMD
Kind of package: reel; tape
Kind of channel: enhancement
на замовлення 2097 шт:
термін постачання 21-30 дні (днів)Кількість | Ціна |
---|---|
14+ | 28.36 грн |
WMO11N65C2 |
Виробник: WAYON
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; WMOS™ C2; unipolar; 650V; 9A; 63W; TO252
Type of transistor: N-MOSFET
Technology: WMOS™ C2
Polarisation: unipolar
Drain-source voltage: 650V
Drain current: 9A
Power dissipation: 63W
Case: TO252
Gate-source voltage: ±30V
On-state resistance: 0.54Ω
Mounting: SMD
Kind of package: reel; tape
Kind of channel: enhancement
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; WMOS™ C2; unipolar; 650V; 9A; 63W; TO252
Type of transistor: N-MOSFET
Technology: WMOS™ C2
Polarisation: unipolar
Drain-source voltage: 650V
Drain current: 9A
Power dissipation: 63W
Case: TO252
Gate-source voltage: ±30V
On-state resistance: 0.54Ω
Mounting: SMD
Kind of package: reel; tape
Kind of channel: enhancement
на замовлення 39 шт:
термін постачання 21-30 дні (днів)Кількість | Ціна |
---|---|
8+ | 54.34 грн |
10+ | 38.99 грн |
25+ | 33.87 грн |
31+ | 29.59 грн |
WMO11N65SR |
Виробник: WAYON
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; WMOS™ SR; unipolar; 650V; 5.4A; Idm: 19A; 63W
Type of transistor: N-MOSFET
Technology: WMOS™ SR
Polarisation: unipolar
Drain-source voltage: 650V
Drain current: 5.4A
Power dissipation: 63W
Case: TO252
Gate-source voltage: ±30V
On-state resistance: 0.6Ω
Mounting: SMD
Kind of package: reel; tape
Kind of channel: enhancement
Pulsed drain current: 19A
Gate charge: 13.7nC
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; WMOS™ SR; unipolar; 650V; 5.4A; Idm: 19A; 63W
Type of transistor: N-MOSFET
Technology: WMOS™ SR
Polarisation: unipolar
Drain-source voltage: 650V
Drain current: 5.4A
Power dissipation: 63W
Case: TO252
Gate-source voltage: ±30V
On-state resistance: 0.6Ω
Mounting: SMD
Kind of package: reel; tape
Kind of channel: enhancement
Pulsed drain current: 19A
Gate charge: 13.7nC
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WMO11N70C2 |
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Виробник: WAYON
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; WMOS™ C2; unipolar; 700V; 8A; 63W; TO252
Type of transistor: N-MOSFET
Technology: WMOS™ C2
Polarisation: unipolar
Drain-source voltage: 700V
Drain current: 8A
Power dissipation: 63W
Case: TO252
Gate-source voltage: ±30V
On-state resistance: 0.68Ω
Mounting: SMD
Kind of package: reel; tape
Kind of channel: enhancement
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; WMOS™ C2; unipolar; 700V; 8A; 63W; TO252
Type of transistor: N-MOSFET
Technology: WMOS™ C2
Polarisation: unipolar
Drain-source voltage: 700V
Drain current: 8A
Power dissipation: 63W
Case: TO252
Gate-source voltage: ±30V
On-state resistance: 0.68Ω
Mounting: SMD
Kind of package: reel; tape
Kind of channel: enhancement
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WMO11N70SR |
Виробник: WAYON
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; WMOS™ SR; unipolar; 700V; 5.4A; Idm: 19A; 63W
Type of transistor: N-MOSFET
Technology: WMOS™ SR
Polarisation: unipolar
Drain-source voltage: 700V
Drain current: 5.4A
Power dissipation: 63W
Case: TO252
Gate-source voltage: ±30V
On-state resistance: 620mΩ
Mounting: SMD
Kind of package: reel; tape
Kind of channel: enhancement
Gate charge: 13.7nC
Pulsed drain current: 19A
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; WMOS™ SR; unipolar; 700V; 5.4A; Idm: 19A; 63W
Type of transistor: N-MOSFET
Technology: WMOS™ SR
Polarisation: unipolar
Drain-source voltage: 700V
Drain current: 5.4A
Power dissipation: 63W
Case: TO252
Gate-source voltage: ±30V
On-state resistance: 620mΩ
Mounting: SMD
Kind of package: reel; tape
Kind of channel: enhancement
Gate charge: 13.7nC
Pulsed drain current: 19A
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WMO11N80M3 |
Виробник: WAYON
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; WMOS™ M3; unipolar; 800V; 10.5A; 85W; TO252
Type of transistor: N-MOSFET
Technology: WMOS™ M3
Polarisation: unipolar
Drain-source voltage: 800V
Drain current: 10.5A
Power dissipation: 85W
Case: TO252
Gate-source voltage: ±30V
On-state resistance: 0.8Ω
Mounting: SMD
Kind of package: reel; tape
Kind of channel: enhancement
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; WMOS™ M3; unipolar; 800V; 10.5A; 85W; TO252
Type of transistor: N-MOSFET
Technology: WMOS™ M3
Polarisation: unipolar
Drain-source voltage: 800V
Drain current: 10.5A
Power dissipation: 85W
Case: TO252
Gate-source voltage: ±30V
On-state resistance: 0.8Ω
Mounting: SMD
Kind of package: reel; tape
Kind of channel: enhancement
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WMO120N04TS |
Виробник: WAYON
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 40V; 120A; Idm: 480A; 96W; TO252
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 40V
Drain current: 120A
Pulsed drain current: 480A
Power dissipation: 96W
Case: TO252
Gate-source voltage: ±20V
On-state resistance: 3.8mΩ
Mounting: SMD
Gate charge: 95nC
Kind of package: reel; tape
Kind of channel: enhancement
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 40V; 120A; Idm: 480A; 96W; TO252
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 40V
Drain current: 120A
Pulsed drain current: 480A
Power dissipation: 96W
Case: TO252
Gate-source voltage: ±20V
On-state resistance: 3.8mΩ
Mounting: SMD
Gate charge: 95nC
Kind of package: reel; tape
Kind of channel: enhancement
на замовлення 166 шт:
термін постачання 21-30 дні (днів)Кількість | Ціна |
---|---|
9+ | 48.57 грн |
15+ | 26.83 грн |
25+ | 24.23 грн |
46+ | 19.57 грн |
126+ | 18.50 грн |
WMO12N80M3 |
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Виробник: WAYON
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; WMOS™ M3; unipolar; 800V; 12A; 86W; TO252
Type of transistor: N-MOSFET
Technology: WMOS™ M3
Polarisation: unipolar
Drain-source voltage: 800V
Drain current: 12A
Power dissipation: 86W
Case: TO252
Gate-source voltage: ±30V
On-state resistance: 620mΩ
Mounting: SMD
Kind of package: reel; tape
Kind of channel: enhancement
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; WMOS™ M3; unipolar; 800V; 12A; 86W; TO252
Type of transistor: N-MOSFET
Technology: WMOS™ M3
Polarisation: unipolar
Drain-source voltage: 800V
Drain current: 12A
Power dissipation: 86W
Case: TO252
Gate-source voltage: ±30V
On-state resistance: 620mΩ
Mounting: SMD
Kind of package: reel; tape
Kind of channel: enhancement
на замовлення 1096 шт:
термін постачання 21-30 дні (днів)Кількість | Ціна |
---|---|
3+ | 139.14 грн |
4+ | 118.50 грн |
10+ | 103.21 грн |
16+ | 59.63 грн |
42+ | 56.57 грн |
WMO13N10TS |
Виробник: WAYON
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 100V; 13A; Idm: 52A; 39W; TO252
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 100V
Drain current: 13A
Pulsed drain current: 52A
Power dissipation: 39W
Case: TO252
Gate-source voltage: ±20V
On-state resistance: 0.13Ω
Mounting: SMD
Kind of package: reel; tape
Kind of channel: enhancement
Gate charge: 4nC
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 100V; 13A; Idm: 52A; 39W; TO252
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 100V
Drain current: 13A
Pulsed drain current: 52A
Power dissipation: 39W
Case: TO252
Gate-source voltage: ±20V
On-state resistance: 0.13Ω
Mounting: SMD
Kind of package: reel; tape
Kind of channel: enhancement
Gate charge: 4nC
на замовлення 650 шт:
термін постачання 21-30 дні (днів)Кількість | Ціна |
---|---|
12+ | 34.58 грн |
29+ | 13.23 грн |
39+ | 10.01 грн |
100+ | 8.87 грн |
113+ | 8.18 грн |
250+ | 7.95 грн |
309+ | 7.72 грн |
WMO13N50C4 |
Виробник: WAYON
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; WMOS™ C4; unipolar; 500V; 6A; Idm: 25A; 57W
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 500V
Drain current: 6A
Case: TO252
Gate-source voltage: ±30V
On-state resistance: 0.48Ω
Mounting: SMD
Kind of package: reel; tape
Kind of channel: enhancement
Power dissipation: 57W
Gate charge: 9.6nC
Technology: WMOS™ C4
Pulsed drain current: 25A
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; WMOS™ C4; unipolar; 500V; 6A; Idm: 25A; 57W
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 500V
Drain current: 6A
Case: TO252
Gate-source voltage: ±30V
On-state resistance: 0.48Ω
Mounting: SMD
Kind of package: reel; tape
Kind of channel: enhancement
Power dissipation: 57W
Gate charge: 9.6nC
Technology: WMOS™ C4
Pulsed drain current: 25A
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WMO13N65EM |
Виробник: WAYON
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; WMOS™ EM; unipolar; 650V; 6.5A; Idm: 35A; 85W
Type of transistor: N-MOSFET
Technology: WMOS™ EM
Polarisation: unipolar
Drain-source voltage: 650V
Drain current: 6.5A
Pulsed drain current: 35A
Power dissipation: 85W
Case: TO252
Gate-source voltage: ±30V
On-state resistance: 390mΩ
Mounting: SMD
Gate charge: 20.3nC
Kind of package: reel; tape
Kind of channel: enhancement
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; WMOS™ EM; unipolar; 650V; 6.5A; Idm: 35A; 85W
Type of transistor: N-MOSFET
Technology: WMOS™ EM
Polarisation: unipolar
Drain-source voltage: 650V
Drain current: 6.5A
Pulsed drain current: 35A
Power dissipation: 85W
Case: TO252
Gate-source voltage: ±30V
On-state resistance: 390mΩ
Mounting: SMD
Gate charge: 20.3nC
Kind of package: reel; tape
Kind of channel: enhancement
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WMO13N80M3 |
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Виробник: WAYON
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; WMOS™ M3; unipolar; 800V; 13A; 130W; TO252
Type of transistor: N-MOSFET
Technology: WMOS™ M3
Polarisation: unipolar
Drain-source voltage: 800V
Drain current: 13A
Power dissipation: 130W
Case: TO252
Gate-source voltage: ±30V
On-state resistance: 0.48Ω
Mounting: SMD
Kind of package: reel; tape
Kind of channel: enhancement
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; WMOS™ M3; unipolar; 800V; 13A; 130W; TO252
Type of transistor: N-MOSFET
Technology: WMOS™ M3
Polarisation: unipolar
Drain-source voltage: 800V
Drain current: 13A
Power dissipation: 130W
Case: TO252
Gate-source voltage: ±30V
On-state resistance: 0.48Ω
Mounting: SMD
Kind of package: reel; tape
Kind of channel: enhancement
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WMO14N60C2 |
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Виробник: WAYON
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; WMOS™ C2; unipolar; 600V; 11A; 85W; TO252
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 600V
Drain current: 11A
Power dissipation: 85W
Case: TO252
Gate-source voltage: ±30V
On-state resistance: 405mΩ
Mounting: SMD
Kind of package: reel; tape
Kind of channel: enhancement
Technology: WMOS™ C2
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; WMOS™ C2; unipolar; 600V; 11A; 85W; TO252
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 600V
Drain current: 11A
Power dissipation: 85W
Case: TO252
Gate-source voltage: ±30V
On-state resistance: 405mΩ
Mounting: SMD
Kind of package: reel; tape
Kind of channel: enhancement
Technology: WMOS™ C2
на замовлення 1623 шт:
термін постачання 21-30 дні (днів)Кількість | Ціна |
---|---|
16+ | 26.35 грн |
17+ | 23.39 грн |
25+ | 22.48 грн |
WMO14N60C4 |
Виробник: WAYON
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; WMOS™ C4; unipolar; 600V; 6A; Idm: 26A; 85W
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 600V
Drain current: 6A
Pulsed drain current: 26A
Power dissipation: 85W
Case: TO252
Gate-source voltage: ±30V
On-state resistance: 0.38Ω
Mounting: SMD
Gate charge: 13nC
Kind of package: reel; tape
Kind of channel: enhancement
Technology: WMOS™ C4
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; WMOS™ C4; unipolar; 600V; 6A; Idm: 26A; 85W
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 600V
Drain current: 6A
Pulsed drain current: 26A
Power dissipation: 85W
Case: TO252
Gate-source voltage: ±30V
On-state resistance: 0.38Ω
Mounting: SMD
Gate charge: 13nC
Kind of package: reel; tape
Kind of channel: enhancement
Technology: WMOS™ C4
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WMO14N65C4 |
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Виробник: WAYON
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; WMOS™ C4; unipolar; 650V; 6A; Idm: 26A; 85W
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 650V
Drain current: 6A
Pulsed drain current: 26A
Power dissipation: 85W
Case: TO252
Gate-source voltage: ±30V
On-state resistance: 0.38Ω
Mounting: SMD
Gate charge: 13nC
Kind of package: reel; tape
Kind of channel: enhancement
Technology: WMOS™ C4
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; WMOS™ C4; unipolar; 650V; 6A; Idm: 26A; 85W
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 650V
Drain current: 6A
Pulsed drain current: 26A
Power dissipation: 85W
Case: TO252
Gate-source voltage: ±30V
On-state resistance: 0.38Ω
Mounting: SMD
Gate charge: 13nC
Kind of package: reel; tape
Kind of channel: enhancement
Technology: WMOS™ C4
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WMO15N10T1 |
Виробник: WAYON
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 100V; 15A; Idm: 60A; 41.7W; TO252
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 100V
Drain current: 15A
Pulsed drain current: 60A
Power dissipation: 41.7W
Case: TO252
Gate-source voltage: ±20V
On-state resistance: 90mΩ
Mounting: SMD
Gate charge: 20.6nC
Kind of package: reel; tape
Kind of channel: enhancement
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 100V; 15A; Idm: 60A; 41.7W; TO252
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 100V
Drain current: 15A
Pulsed drain current: 60A
Power dissipation: 41.7W
Case: TO252
Gate-source voltage: ±20V
On-state resistance: 90mΩ
Mounting: SMD
Gate charge: 20.6nC
Kind of package: reel; tape
Kind of channel: enhancement
на замовлення 979 шт:
термін постачання 21-30 дні (днів)Кількість | Ціна |
---|---|
11+ | 37.87 грн |
27+ | 14.37 грн |
36+ | 10.86 грн |
100+ | 9.71 грн |
102+ | 8.87 грн |
250+ | 8.64 грн |
278+ | 8.41 грн |
WMO15N60C4 |
Виробник: WAYON
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; WMOS™ C4; unipolar; 600V; 7.8A; Idm: 26A; 86W
Type of transistor: N-MOSFET
Technology: WMOS™ C4
Polarisation: unipolar
Drain-source voltage: 600V
Drain current: 7.8A
Pulsed drain current: 26A
Power dissipation: 86W
Case: TO252
Gate-source voltage: ±30V
On-state resistance: 0.3Ω
Mounting: SMD
Gate charge: 14.6nC
Kind of package: reel; tape
Kind of channel: enhancement
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; WMOS™ C4; unipolar; 600V; 7.8A; Idm: 26A; 86W
Type of transistor: N-MOSFET
Technology: WMOS™ C4
Polarisation: unipolar
Drain-source voltage: 600V
Drain current: 7.8A
Pulsed drain current: 26A
Power dissipation: 86W
Case: TO252
Gate-source voltage: ±30V
On-state resistance: 0.3Ω
Mounting: SMD
Gate charge: 14.6nC
Kind of package: reel; tape
Kind of channel: enhancement
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WMO15N65C4 |
Виробник: WAYON
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; WMOS™ C4; unipolar; 650V; 7.8A; Idm: 26A; 86W
Type of transistor: N-MOSFET
Technology: WMOS™ C4
Polarisation: unipolar
Drain-source voltage: 650V
Case: TO252
On-state resistance: 0.3Ω
Mounting: SMD
Kind of package: reel; tape
Kind of channel: enhancement
Power dissipation: 86W
Gate charge: 14.6nC
Gate-source voltage: ±30V
Pulsed drain current: 26A
Drain current: 7.8A
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; WMOS™ C4; unipolar; 650V; 7.8A; Idm: 26A; 86W
Type of transistor: N-MOSFET
Technology: WMOS™ C4
Polarisation: unipolar
Drain-source voltage: 650V
Case: TO252
On-state resistance: 0.3Ω
Mounting: SMD
Kind of package: reel; tape
Kind of channel: enhancement
Power dissipation: 86W
Gate charge: 14.6nC
Gate-source voltage: ±30V
Pulsed drain current: 26A
Drain current: 7.8A
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WMO15N65F2 |
Виробник: WAYON
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; WMOS™ F2; unipolar; 650V; 7.8A; Idm: 26A; 86W
Type of transistor: N-MOSFET
Technology: WMOS™ F2
Polarisation: unipolar
Drain-source voltage: 650V
Case: TO252
On-state resistance: 335mΩ
Mounting: SMD
Kind of package: reel; tape
Kind of channel: enhancement
Power dissipation: 86W
Gate charge: 14.7nC
Gate-source voltage: ±30V
Pulsed drain current: 26A
Drain current: 7.8A
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; WMOS™ F2; unipolar; 650V; 7.8A; Idm: 26A; 86W
Type of transistor: N-MOSFET
Technology: WMOS™ F2
Polarisation: unipolar
Drain-source voltage: 650V
Case: TO252
On-state resistance: 335mΩ
Mounting: SMD
Kind of package: reel; tape
Kind of channel: enhancement
Power dissipation: 86W
Gate charge: 14.7nC
Gate-source voltage: ±30V
Pulsed drain current: 26A
Drain current: 7.8A
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WMO15N70C4 |
Виробник: WAYON
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; WMOS™ C4; unipolar; 700V; 7.8A; Idm: 26A; 86W
Type of transistor: N-MOSFET
Technology: WMOS™ C4
Polarisation: unipolar
Drain-source voltage: 700V
Drain current: 7.8A
Power dissipation: 86W
Case: TO252
Gate-source voltage: ±30V
On-state resistance: 0.32Ω
Mounting: SMD
Kind of package: reel; tape
Kind of channel: enhancement
Pulsed drain current: 26A
Gate charge: 14.6nC
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; WMOS™ C4; unipolar; 700V; 7.8A; Idm: 26A; 86W
Type of transistor: N-MOSFET
Technology: WMOS™ C4
Polarisation: unipolar
Drain-source voltage: 700V
Drain current: 7.8A
Power dissipation: 86W
Case: TO252
Gate-source voltage: ±30V
On-state resistance: 0.32Ω
Mounting: SMD
Kind of package: reel; tape
Kind of channel: enhancement
Pulsed drain current: 26A
Gate charge: 14.6nC
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WMO16N60FD |
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Виробник: WAYON
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; WMOS™ FD; unipolar; 600V; 13A; 86W; TO252
Type of transistor: N-MOSFET
Technology: WMOS™ FD
Polarisation: unipolar
Drain-source voltage: 600V
Drain current: 13A
Power dissipation: 86W
Case: TO252
Gate-source voltage: ±30V
On-state resistance: 0.32Ω
Mounting: SMD
Kind of package: reel; tape
Kind of channel: enhancement
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; WMOS™ FD; unipolar; 600V; 13A; 86W; TO252
Type of transistor: N-MOSFET
Technology: WMOS™ FD
Polarisation: unipolar
Drain-source voltage: 600V
Drain current: 13A
Power dissipation: 86W
Case: TO252
Gate-source voltage: ±30V
On-state resistance: 0.32Ω
Mounting: SMD
Kind of package: reel; tape
Kind of channel: enhancement
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WMO16N65C2 |
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Виробник: WAYON
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; WMOS™ C2; unipolar; 650V; 13A; 86W; TO252
Type of transistor: N-MOSFET
Technology: WMOS™ C2
Polarisation: unipolar
Drain-source voltage: 650V
Drain current: 13A
Power dissipation: 86W
Case: TO252
Gate-source voltage: ±30V
On-state resistance: 0.32Ω
Mounting: SMD
Kind of package: reel; tape
Kind of channel: enhancement
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; WMOS™ C2; unipolar; 650V; 13A; 86W; TO252
Type of transistor: N-MOSFET
Technology: WMOS™ C2
Polarisation: unipolar
Drain-source voltage: 650V
Drain current: 13A
Power dissipation: 86W
Case: TO252
Gate-source voltage: ±30V
On-state resistance: 0.32Ω
Mounting: SMD
Kind of package: reel; tape
Kind of channel: enhancement
на замовлення 148 шт:
термін постачання 21-30 дні (днів)Кількість | Ціна |
---|---|
7+ | 65.04 грн |
8+ | 52.75 грн |
20+ | 45.87 грн |
54+ | 43.58 грн |
WMO16N65FD |
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Виробник: WAYON
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; WMOS™ FD; unipolar; 650V; 13A; 86W; TO252
Type of transistor: N-MOSFET
Technology: WMOS™ FD
Polarisation: unipolar
Drain-source voltage: 650V
Drain current: 13A
Power dissipation: 86W
Case: TO252
Gate-source voltage: ±30V
On-state resistance: 0.32Ω
Mounting: SMD
Kind of package: reel; tape
Kind of channel: enhancement
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; WMOS™ FD; unipolar; 650V; 13A; 86W; TO252
Type of transistor: N-MOSFET
Technology: WMOS™ FD
Polarisation: unipolar
Drain-source voltage: 650V
Drain current: 13A
Power dissipation: 86W
Case: TO252
Gate-source voltage: ±30V
On-state resistance: 0.32Ω
Mounting: SMD
Kind of package: reel; tape
Kind of channel: enhancement
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WMO16N65SR |
Виробник: WAYON
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; WMOS™ SR; unipolar; 650V; 8.4A; Idm: 35A; 86W
Type of transistor: N-MOSFET
Technology: WMOS™ SR
Polarisation: unipolar
Drain-source voltage: 650V
Drain current: 8.4A
Pulsed drain current: 35A
Power dissipation: 86W
Case: TO252
Gate-source voltage: ±30V
On-state resistance: 0.35Ω
Mounting: SMD
Gate charge: 19.5nC
Kind of package: reel; tape
Kind of channel: enhancement
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; WMOS™ SR; unipolar; 650V; 8.4A; Idm: 35A; 86W
Type of transistor: N-MOSFET
Technology: WMOS™ SR
Polarisation: unipolar
Drain-source voltage: 650V
Drain current: 8.4A
Pulsed drain current: 35A
Power dissipation: 86W
Case: TO252
Gate-source voltage: ±30V
On-state resistance: 0.35Ω
Mounting: SMD
Gate charge: 19.5nC
Kind of package: reel; tape
Kind of channel: enhancement
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WMO16N70SR |
Виробник: WAYON
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; WMOS™ SR; unipolar; 700V; 8.4A; Idm: 35A; 86W
Type of transistor: N-MOSFET
Technology: WMOS™ SR
Polarisation: unipolar
Drain-source voltage: 700V
Drain current: 8.4A
Power dissipation: 86W
Case: TO252
Gate-source voltage: ±30V
On-state resistance: 0.36Ω
Mounting: SMD
Kind of package: reel; tape
Kind of channel: enhancement
Pulsed drain current: 35A
Gate charge: 19.5nC
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; WMOS™ SR; unipolar; 700V; 8.4A; Idm: 35A; 86W
Type of transistor: N-MOSFET
Technology: WMOS™ SR
Polarisation: unipolar
Drain-source voltage: 700V
Drain current: 8.4A
Power dissipation: 86W
Case: TO252
Gate-source voltage: ±30V
On-state resistance: 0.36Ω
Mounting: SMD
Kind of package: reel; tape
Kind of channel: enhancement
Pulsed drain current: 35A
Gate charge: 19.5nC
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WMO175N10HG4 |
Виробник: WAYON
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 100V; 45A; Idm: 180A; 67.5W; TO252
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 100V
Drain current: 45A
Pulsed drain current: 180A
Power dissipation: 67.5W
Case: TO252
Gate-source voltage: ±20V
On-state resistance: 17.5mΩ
Mounting: SMD
Gate charge: 17nC
Kind of package: reel; tape
Kind of channel: enhancement
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 100V; 45A; Idm: 180A; 67.5W; TO252
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 100V
Drain current: 45A
Pulsed drain current: 180A
Power dissipation: 67.5W
Case: TO252
Gate-source voltage: ±20V
On-state resistance: 17.5mΩ
Mounting: SMD
Gate charge: 17nC
Kind of package: reel; tape
Kind of channel: enhancement
на замовлення 200 шт:
термін постачання 21-30 дні (днів)Кількість | Ціна |
---|---|
9+ | 49.40 грн |
14+ | 27.52 грн |
25+ | 24.69 грн |
45+ | 20.11 грн |
124+ | 18.96 грн |
WMO175N10LG4 |
Виробник: WAYON
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 100V; 45A; Idm: 180A; 67.5W; TO252
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 100V
Drain current: 45A
Pulsed drain current: 180A
Power dissipation: 67.5W
Case: TO252
Gate-source voltage: ±20V
On-state resistance: 17mΩ
Mounting: SMD
Gate charge: 22.5nC
Kind of package: reel; tape
Kind of channel: enhancement
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 100V; 45A; Idm: 180A; 67.5W; TO252
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 100V
Drain current: 45A
Pulsed drain current: 180A
Power dissipation: 67.5W
Case: TO252
Gate-source voltage: ±20V
On-state resistance: 17mΩ
Mounting: SMD
Gate charge: 22.5nC
Kind of package: reel; tape
Kind of channel: enhancement
на замовлення 200 шт:
термін постачання 21-30 дні (днів)Кількість | Ціна |
---|---|
11+ | 38.69 грн |
18+ | 21.56 грн |
25+ | 19.42 грн |
58+ | 15.67 грн |
159+ | 14.75 грн |
WMO18N20T2 |
Виробник: WAYON
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 200V; 18A; Idm: 72A; 83W; TO252
Case: TO252
Mounting: SMD
Kind of package: reel; tape
Gate charge: 11nC
Kind of channel: enhancement
Gate-source voltage: ±20V
Pulsed drain current: 72A
Drain-source voltage: 200V
Drain current: 18A
On-state resistance: 0.13Ω
Type of transistor: N-MOSFET
Power dissipation: 83W
Polarisation: unipolar
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 200V; 18A; Idm: 72A; 83W; TO252
Case: TO252
Mounting: SMD
Kind of package: reel; tape
Gate charge: 11nC
Kind of channel: enhancement
Gate-source voltage: ±20V
Pulsed drain current: 72A
Drain-source voltage: 200V
Drain current: 18A
On-state resistance: 0.13Ω
Type of transistor: N-MOSFET
Power dissipation: 83W
Polarisation: unipolar
на замовлення 90 шт:
термін постачання 21-30 дні (днів)Кількість | Ціна |
---|---|
7+ | 62.57 грн |
10+ | 44.42 грн |
25+ | 41.97 грн |
27+ | 34.40 грн |
72+ | 32.57 грн |
WMO18N50C4 |
Виробник: WAYON
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; WMOS™ C4; unipolar; 500V; 10A; Idm: 50A; 75W
Type of transistor: N-MOSFET
Technology: WMOS™ C4
Polarisation: unipolar
Drain-source voltage: 500V
Drain current: 10A
Pulsed drain current: 50A
Power dissipation: 75W
Case: TO252
Gate-source voltage: ±30V
On-state resistance: 0.3Ω
Mounting: SMD
Gate charge: 13nC
Kind of package: reel; tape
Kind of channel: enhancement
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; WMOS™ C4; unipolar; 500V; 10A; Idm: 50A; 75W
Type of transistor: N-MOSFET
Technology: WMOS™ C4
Polarisation: unipolar
Drain-source voltage: 500V
Drain current: 10A
Pulsed drain current: 50A
Power dissipation: 75W
Case: TO252
Gate-source voltage: ±30V
On-state resistance: 0.3Ω
Mounting: SMD
Gate charge: 13nC
Kind of package: reel; tape
Kind of channel: enhancement
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WMO18N65EM |
Виробник: WAYON
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; WMOS™ EM; unipolar; 650V; 8.6A; Idm: 43A; 125W
Type of transistor: N-MOSFET
Technology: WMOS™ EM
Polarisation: unipolar
Drain-source voltage: 650V
Drain current: 8.6A
Pulsed drain current: 43A
Power dissipation: 125W
Case: TO252
Gate-source voltage: ±30V
On-state resistance: 0.28Ω
Mounting: SMD
Gate charge: 26nC
Kind of package: reel; tape
Kind of channel: enhancement
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; WMOS™ EM; unipolar; 650V; 8.6A; Idm: 43A; 125W
Type of transistor: N-MOSFET
Technology: WMOS™ EM
Polarisation: unipolar
Drain-source voltage: 650V
Drain current: 8.6A
Pulsed drain current: 43A
Power dissipation: 125W
Case: TO252
Gate-source voltage: ±30V
On-state resistance: 0.28Ω
Mounting: SMD
Gate charge: 26nC
Kind of package: reel; tape
Kind of channel: enhancement
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WMO18N70EM |
Виробник: WAYON
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; WMOS™ EM; unipolar; 700V; 8.6A; Idm: 43A; 125W
Type of transistor: N-MOSFET
Technology: WMOS™ EM
Polarisation: unipolar
Drain-source voltage: 700V
Drain current: 8.6A
Pulsed drain current: 43A
Power dissipation: 125W
Case: TO252
Gate-source voltage: ±30V
On-state resistance: 0.28Ω
Mounting: SMD
Gate charge: 26nC
Kind of package: reel; tape
Kind of channel: enhancement
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; WMOS™ EM; unipolar; 700V; 8.6A; Idm: 43A; 125W
Type of transistor: N-MOSFET
Technology: WMOS™ EM
Polarisation: unipolar
Drain-source voltage: 700V
Drain current: 8.6A
Pulsed drain current: 43A
Power dissipation: 125W
Case: TO252
Gate-source voltage: ±30V
On-state resistance: 0.28Ω
Mounting: SMD
Gate charge: 26nC
Kind of package: reel; tape
Kind of channel: enhancement
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WMO18P10TS |
Виробник: WAYON
Category: SMD P channel transistors
Description: Transistor: P-MOSFET; unipolar; -100V; -18A; Idm: -72A; 70W; TO252
Type of transistor: P-MOSFET
Polarisation: unipolar
Drain-source voltage: -100V
Drain current: -18A
Pulsed drain current: -72A
Power dissipation: 70W
Case: TO252
Gate-source voltage: ±20V
On-state resistance: 0.1Ω
Mounting: SMD
Kind of package: reel; tape
Kind of channel: enhancement
Gate charge: 65nC
Category: SMD P channel transistors
Description: Transistor: P-MOSFET; unipolar; -100V; -18A; Idm: -72A; 70W; TO252
Type of transistor: P-MOSFET
Polarisation: unipolar
Drain-source voltage: -100V
Drain current: -18A
Pulsed drain current: -72A
Power dissipation: 70W
Case: TO252
Gate-source voltage: ±20V
On-state resistance: 0.1Ω
Mounting: SMD
Kind of package: reel; tape
Kind of channel: enhancement
Gate charge: 65nC
на замовлення 500 шт:
термін постачання 21-30 дні (днів)Кількість | Ціна |
---|---|
9+ | 49.40 грн |
14+ | 27.60 грн |
25+ | 24.77 грн |
46+ | 20.11 грн |
125+ | 19.04 грн |
WMO190N03TS |
Виробник: WAYON
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 30V; 190A; Idm: 760A; 166.7W; TO252
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 30V
Drain current: 190A
Pulsed drain current: 760A
Power dissipation: 166.7W
Case: TO252
Gate-source voltage: ±20V
On-state resistance: 3mΩ
Mounting: SMD
Gate charge: 0.1µC
Kind of package: reel; tape
Kind of channel: enhancement
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 30V; 190A; Idm: 760A; 166.7W; TO252
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 30V
Drain current: 190A
Pulsed drain current: 760A
Power dissipation: 166.7W
Case: TO252
Gate-source voltage: ±20V
On-state resistance: 3mΩ
Mounting: SMD
Gate charge: 0.1µC
Kind of package: reel; tape
Kind of channel: enhancement
на замовлення 73 шт:
термін постачання 21-30 дні (днів)Кількість | Ціна |
---|---|
11+ | 40.34 грн |
17+ | 22.71 грн |
25+ | 20.49 грн |
54+ | 16.59 грн |
WMO20N65EM |
Виробник: WAYON
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; WMOS™ EM; unipolar; 650V; TO252
Type of transistor: N-MOSFET
Technology: WMOS™ EM
Polarisation: unipolar
Drain-source voltage: 650V
Case: TO252
On-state resistance: 0.24Ω
Mounting: SMD
Kind of package: reel; tape
Kind of channel: enhancement
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; WMOS™ EM; unipolar; 650V; TO252
Type of transistor: N-MOSFET
Technology: WMOS™ EM
Polarisation: unipolar
Drain-source voltage: 650V
Case: TO252
On-state resistance: 0.24Ω
Mounting: SMD
Kind of package: reel; tape
Kind of channel: enhancement
товару немає в наявності
В кошику
од. на суму грн.
WMO22N50C4 |
Виробник: WAYON
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; WMOS™ C4; unipolar; 500V; 11A; Idm: 60A; 86W
Type of transistor: N-MOSFET
Technology: WMOS™ C4
Polarisation: unipolar
Drain-source voltage: 500V
Drain current: 11A
Pulsed drain current: 60A
Power dissipation: 86W
Case: TO252
Gate-source voltage: ±30V
On-state resistance: 0.27Ω
Mounting: SMD
Gate charge: 14.6nC
Kind of package: reel; tape
Kind of channel: enhancement
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; WMOS™ C4; unipolar; 500V; 11A; Idm: 60A; 86W
Type of transistor: N-MOSFET
Technology: WMOS™ C4
Polarisation: unipolar
Drain-source voltage: 500V
Drain current: 11A
Pulsed drain current: 60A
Power dissipation: 86W
Case: TO252
Gate-source voltage: ±30V
On-state resistance: 0.27Ω
Mounting: SMD
Gate charge: 14.6nC
Kind of package: reel; tape
Kind of channel: enhancement
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В кошику
од. на суму грн.
WMO240N10LG2 |
Виробник: WAYON
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 100V; 36A; Idm: 144A; 56.8W; TO252
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 100V
Drain current: 36A
Pulsed drain current: 144A
Power dissipation: 56.8W
Case: TO252
Gate-source voltage: ±20V
On-state resistance: 22mΩ
Mounting: SMD
Gate charge: 15.8nC
Kind of package: reel; tape
Kind of channel: enhancement
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 100V; 36A; Idm: 144A; 56.8W; TO252
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 100V
Drain current: 36A
Pulsed drain current: 144A
Power dissipation: 56.8W
Case: TO252
Gate-source voltage: ±20V
On-state resistance: 22mΩ
Mounting: SMD
Gate charge: 15.8nC
Kind of package: reel; tape
Kind of channel: enhancement
на замовлення 455 шт:
термін постачання 21-30 дні (днів)Кількість | Ціна |
---|---|
13+ | 32.11 грн |
25+ | 15.75 грн |
27+ | 14.22 грн |
78+ | 11.62 грн |
214+ | 10.93 грн |
WMO25N10T1 |
Виробник: WAYON
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 100V; 25A; Idm: 100A; 53.2W; TO252
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 100V
Drain current: 25A
Pulsed drain current: 100A
Power dissipation: 53.2W
Case: TO252
Gate-source voltage: ±20V
On-state resistance: 44mΩ
Mounting: SMD
Gate charge: 37.9nC
Kind of package: reel; tape
Kind of channel: enhancement
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 100V; 25A; Idm: 100A; 53.2W; TO252
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 100V
Drain current: 25A
Pulsed drain current: 100A
Power dissipation: 53.2W
Case: TO252
Gate-source voltage: ±20V
On-state resistance: 44mΩ
Mounting: SMD
Gate charge: 37.9nC
Kind of package: reel; tape
Kind of channel: enhancement
на замовлення 500 шт:
термін постачання 21-30 дні (днів)Кількість | Ціна |
---|---|
13+ | 32.11 грн |
28+ | 13.84 грн |
31+ | 12.54 грн |
90+ | 10.09 грн |
246+ | 9.56 грн |
WMO25N50C4 |
Виробник: WAYON
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; WMOS™ C4; unipolar; 500V; 13A; Idm: 65A; 135W
Type of transistor: N-MOSFET
Technology: WMOS™ C4
Polarisation: unipolar
Drain-source voltage: 500V
Drain current: 13A
Pulsed drain current: 65A
Power dissipation: 135W
Case: TO252
Gate-source voltage: ±30V
On-state resistance: 0.16Ω
Mounting: SMD
Gate charge: 22.1nC
Kind of package: reel; tape
Kind of channel: enhancement
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; WMOS™ C4; unipolar; 500V; 13A; Idm: 65A; 135W
Type of transistor: N-MOSFET
Technology: WMOS™ C4
Polarisation: unipolar
Drain-source voltage: 500V
Drain current: 13A
Pulsed drain current: 65A
Power dissipation: 135W
Case: TO252
Gate-source voltage: ±30V
On-state resistance: 0.16Ω
Mounting: SMD
Gate charge: 22.1nC
Kind of package: reel; tape
Kind of channel: enhancement
товару немає в наявності
В кошику
од. на суму грн.