| Фото | Назва | Виробник | Інформація | Доступність | Ціна без ПДВ | ||||||||||||
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WML07N100C2 | WAYON |
Category: THT N channel transistors Description: Transistor: N-MOSFET; WMOS™ C2; unipolar; 1kV; 2.2A; Idm: 12A; 27W Type of transistor: N-MOSFET Technology: WMOS™ C2 Polarisation: unipolar Drain-source voltage: 1kV Drain current: 2.2A Power dissipation: 27W Case: TO220FP Gate-source voltage: ±30V On-state resistance: 2.5Ω Mounting: THT Gate charge: 15.8nC Kind of package: tube Kind of channel: enhancement Pulsed drain current: 12A |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||||||
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WML07N60C2 | WAYON |
Category: THT N channel transistorsDescription: Transistor: N-MOSFET; WMOS™ C2; unipolar; 600V; 5A; 23W; TO220FP Type of transistor: N-MOSFET Technology: WMOS™ C2 Polarisation: unipolar Drain-source voltage: 600V Drain current: 5A Power dissipation: 23W Case: TO220FP Gate-source voltage: ±30V On-state resistance: 1.14Ω Mounting: THT Kind of package: tube Kind of channel: enhancement |
на замовлення 425 шт: термін постачання 14-30 дні (днів) |
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WML07N60C4 | WAYON |
Category: THT N channel transistors Description: Transistor: N-MOSFET; WMOS™ C4; unipolar; 600V; 2.8A; Idm: 9A; 23W Type of transistor: N-MOSFET Technology: WMOS™ C4 Polarisation: unipolar Drain-source voltage: 600V Drain current: 2.8A Power dissipation: 23W Case: TO220FP Gate-source voltage: ±30V On-state resistance: 1.14Ω Mounting: THT Kind of package: tube Kind of channel: enhancement Pulsed drain current: 9A Gate charge: 5.2nC |
на замовлення 381 шт: термін постачання 14-30 дні (днів) |
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WML07N65C4 | WAYON |
Category: THT N channel transistors Description: Transistor: N-MOSFET; WMOS™ C4; unipolar; 650V; 2.8A; Idm: 9A; 23W Type of transistor: N-MOSFET Polarisation: unipolar Drain-source voltage: 650V Drain current: 2.8A Case: TO220FP Gate-source voltage: ±30V On-state resistance: 1.14Ω Mounting: THT Gate charge: 5.2nC Kind of channel: enhancement Pulsed drain current: 9A Power dissipation: 23W Technology: WMOS™ C4 Kind of package: tube |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||||||
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WML07N70C4 | WAYON |
Category: THT N channel transistors Description: Transistor: N-MOSFET; WMOS™ C4; unipolar; 700V; 2.8A; Idm: 9A; 23W Type of transistor: N-MOSFET Technology: WMOS™ C4 Polarisation: unipolar Drain-source voltage: 700V Drain current: 2.8A Power dissipation: 23W Case: TO220FP Gate-source voltage: ±30V On-state resistance: 1.14Ω Mounting: THT Kind of package: tube Kind of channel: enhancement Pulsed drain current: 9A Gate charge: 5.2nC |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||||||
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WML080N10HG2 | WAYON |
Category: THT N channel transistors Description: Transistor: N-MOSFET; unipolar; 100V; 26A; Idm: 168A; 28.4W; TO220FP Type of transistor: N-MOSFET Polarisation: unipolar Drain-source voltage: 100V Drain current: 26A Power dissipation: 28.4W Case: TO220FP Gate-source voltage: ±20V On-state resistance: 8.8mΩ Mounting: THT Kind of channel: enhancement Pulsed drain current: 168A Gate charge: 25.4nC Kind of package: tube |
на замовлення 293 шт: термін постачання 14-30 дні (днів) |
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WML08N60C4 | WAYON |
Category: THT N channel transistors Description: Transistor: N-MOSFET; WMOS™ C4; unipolar; 600V; 3.6A; Idm: 12A; 26W Type of transistor: N-MOSFET Technology: WMOS™ C4 Power dissipation: 26W Case: TO220FP Mounting: THT Gate charge: 7.3nC Kind of package: tube Pulsed drain current: 12A Polarisation: unipolar Drain current: 3.6A Kind of channel: enhancement Drain-source voltage: 600V Gate-source voltage: ±30V On-state resistance: 780mΩ |
на замовлення 356 шт: термін постачання 14-30 дні (днів) |
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WML08N65C4 | WAYON |
Category: THT N channel transistors Description: Transistor: N-MOSFET; WMOS™ C4; unipolar; 650V; 3.6A; Idm: 12A; 26W Type of transistor: N-MOSFET Technology: WMOS™ C4 Polarisation: unipolar Drain-source voltage: 650V Drain current: 3.6A Power dissipation: 26W Case: TO220FP Gate-source voltage: ±30V On-state resistance: 780mΩ Mounting: THT Kind of package: tube Kind of channel: enhancement Pulsed drain current: 12A Gate charge: 7.3nC |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||||||
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WML08N80M3 | WAYON |
Category: THT N channel transistorsDescription: Transistor: N-MOSFET; WMOS™ M3; unipolar; 800V; 7A; 29W; TO220FP Mounting: THT Power dissipation: 29W Polarisation: unipolar Technology: WMOS™ M3 Drain current: 7A Kind of channel: enhancement Drain-source voltage: 800V Type of transistor: N-MOSFET Gate-source voltage: ±30V Kind of package: tube Case: TO220FP On-state resistance: 1.38Ω |
на замовлення 334 шт: термін постачання 14-30 дні (днів) |
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WML10N100C2 | WAYON |
Category: THT N channel transistors Description: Transistor: N-MOSFET; WMOS™ C2; unipolar; 1kV; 3.3A; Idm: 18A; 31W Type of transistor: N-MOSFET Polarisation: unipolar Drain-source voltage: 1kV Drain current: 3.3A Pulsed drain current: 18A Power dissipation: 31W Case: TO220FP Gate-source voltage: ±30V On-state resistance: 1.4Ω Mounting: THT Gate charge: 18.8nC Kind of package: tube Kind of channel: enhancement Technology: WMOS™ C2 |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||||||
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WML10N50C4 | WAYON |
Category: THT N channel transistors Description: Transistor: N-MOSFET; WMOS™ C4; unipolar; 500V; 4.8A; Idm: 16A; 26W Type of transistor: N-MOSFET Technology: WMOS™ C4 Polarisation: unipolar Drain-source voltage: 500V Drain current: 4.8A Pulsed drain current: 16A Power dissipation: 26W Case: TO220FP Gate-source voltage: ±30V On-state resistance: 0.63Ω Mounting: THT Gate charge: 7.3nC Kind of package: tube Kind of channel: enhancement |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||||||
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WML10N60C4 | WAYON |
Category: THT N channel transistors Description: Transistor: N-MOSFET; WMOS™ C4; unipolar; 600V; 4.8A; Idm: 19A; 27W Type of transistor: N-MOSFET Polarisation: unipolar Drain-source voltage: 600V Drain current: 4.8A Power dissipation: 27W Case: TO220FP Gate-source voltage: ±30V On-state resistance: 0.6Ω Mounting: THT Gate charge: 9.6nC Kind of channel: enhancement Kind of package: tube Pulsed drain current: 19A Technology: WMOS™ C4 |
на замовлення 194 шт: термін постачання 14-30 дні (днів) |
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WML10N65C2 | WAYON |
Category: THT N channel transistorsDescription: Transistor: N-MOSFET; WMOS™ C2; unipolar; 650V; 8A; 27W; TO220FP Type of transistor: N-MOSFET Technology: WMOS™ C2 Polarisation: unipolar Drain-source voltage: 650V Drain current: 8A Power dissipation: 27W Case: TO220FP Gate-source voltage: ±30V On-state resistance: 690mΩ Mounting: THT Kind of package: tube Kind of channel: enhancement |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||||||
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WML10N65C4 | WAYON |
Category: THT N channel transistors Description: Transistor: N-MOSFET; WMOS™ C4; unipolar; 650V; 4.8A; Idm: 19A; 27W Type of transistor: N-MOSFET Polarisation: unipolar Drain-source voltage: 650V Drain current: 4.8A Power dissipation: 27W Case: TO220FP Gate-source voltage: ±30V On-state resistance: 0.6Ω Mounting: THT Gate charge: 9.6nC Kind of channel: enhancement Kind of package: tube Pulsed drain current: 19A Technology: WMOS™ C4 |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||||||
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WML10N65EM | WAYON |
Category: THT N channel transistors Description: Transistor: N-MOSFET; WMOS™ EM; unipolar; 650V; 4.8A; Idm: 24A; 28W Type of transistor: N-MOSFET Polarisation: unipolar Drain-source voltage: 650V Drain current: 4.8A Power dissipation: 28W Case: TO220FP Gate-source voltage: ±30V On-state resistance: 0.6Ω Mounting: THT Gate charge: 13.5nC Kind of channel: enhancement Kind of package: tube Pulsed drain current: 24A Technology: WMOS™ EM |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||||||
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WML10N70C4 | WAYON |
Category: THT N channel transistors Description: Transistor: N-MOSFET; WMOS™ C4; unipolar; 700V; 4.8A; Idm: 19A; 27W Type of transistor: N-MOSFET Technology: WMOS™ C4 Polarisation: unipolar Drain-source voltage: 700V Drain current: 4.8A Power dissipation: 27W Case: TO220FP Gate-source voltage: ±30V On-state resistance: 0.6Ω Mounting: THT Kind of package: tube Kind of channel: enhancement Pulsed drain current: 19A Gate charge: 9.6nC |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||||||
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WML10N70D1 | WAYON |
Category: THT N channel transistors Description: Transistor: N-MOSFET; WMOS™ D1; unipolar; 700V; 10A; Idm: 40A; 62.5W Type of transistor: N-MOSFET Technology: WMOS™ D1 Polarisation: unipolar Drain-source voltage: 700V Drain current: 10A Power dissipation: 62.5W Case: TO220FP Gate-source voltage: ±30V On-state resistance: 880mΩ Mounting: THT Kind of package: tube Kind of channel: enhancement Pulsed drain current: 40A Gate charge: 25nC |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||||||
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WML10N70EM | WAYON |
Category: THT N channel transistors Description: Transistor: N-MOSFET; WMOS™ EM; unipolar; 700V; 4.8A; Idm: 24A; 28W Type of transistor: N-MOSFET Technology: WMOS™ EM Polarisation: unipolar Drain-source voltage: 700V Drain current: 4.8A Power dissipation: 28W Case: TO220FP Gate-source voltage: ±30V On-state resistance: 0.6Ω Mounting: THT Kind of package: tube Kind of channel: enhancement Pulsed drain current: 24A Gate charge: 13.5nC |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||||||
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WML10N80D1 | WAYON |
Category: THT N channel transistors Description: Transistor: N-MOSFET; WMOS™ D1; unipolar; 800V; 10A; Idm: 40A; 62.5W Type of transistor: N-MOSFET Technology: WMOS™ D1 Polarisation: unipolar Drain-source voltage: 800V Drain current: 10A Power dissipation: 62.5W Case: TO220FP Gate-source voltage: ±30V On-state resistance: 910mΩ Mounting: THT Kind of package: tube Kind of channel: enhancement Pulsed drain current: 40A Gate charge: 33nC |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||||||
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WML10N80D1B | WAYON |
Category: THT N channel transistors Description: Transistor: N-MOSFET; unipolar; 800V; 10A; Idm: 40A; 62.5W; TO220FP Type of transistor: N-MOSFET Polarisation: unipolar Drain-source voltage: 800V Drain current: 10A Pulsed drain current: 40A Power dissipation: 62.5W Case: TO220FP Gate-source voltage: ±30V On-state resistance: 910mΩ Mounting: THT Gate charge: 33nC Kind of package: tube Kind of channel: enhancement |
на замовлення 140 шт: термін постачання 14-30 дні (днів) |
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WML10N80M3 | WAYON |
Category: THT N channel transistorsDescription: Transistor: N-MOSFET; WMOS™ M3; unipolar; 800V; 10A; 31W; TO220FP Type of transistor: N-MOSFET Technology: WMOS™ M3 Polarisation: unipolar Drain-source voltage: 800V Drain current: 10A Power dissipation: 31W Case: TO220FP Gate-source voltage: ±30V On-state resistance: 1.03Ω Mounting: THT Kind of package: tube Kind of channel: enhancement |
на замовлення 370 шт: термін постачання 14-30 дні (днів) |
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WML11N65C2 | WAYON |
Category: THT N channel transistors Description: Transistor: N-MOSFET; WMOS™ C2; unipolar; 650V; 9A; 28W; TO220FP Type of transistor: N-MOSFET Technology: WMOS™ C2 Polarisation: unipolar Drain-source voltage: 650V Drain current: 9A Power dissipation: 28W Case: TO220FP Gate-source voltage: ±30V On-state resistance: 0.54Ω Mounting: THT Kind of package: tube Kind of channel: enhancement |
на замовлення 423 шт: термін постачання 14-30 дні (днів) |
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WML11N65SR | WAYON |
Category: THT N channel transistors Description: Transistor: N-MOSFET; WMOS™ SR; unipolar; 650V; 5.4A; Idm: 19A; 28W Type of transistor: N-MOSFET Technology: WMOS™ SR Polarisation: unipolar Drain-source voltage: 650V Drain current: 5.4A Power dissipation: 28W Case: TO220FP Gate-source voltage: ±30V On-state resistance: 0.6Ω Mounting: THT Kind of package: tube Kind of channel: enhancement Pulsed drain current: 19A Gate charge: 13.7nC |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||||||
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WML11N80M3 | WAYON |
Category: THT N channel transistors Description: Transistor: N-MOSFET; WMOS™ M3; unipolar; 800V; 10.5A; 31W; TO220FP Type of transistor: N-MOSFET Technology: WMOS™ M3 Polarisation: unipolar Drain-source voltage: 800V Drain current: 10.5A Power dissipation: 31W Case: TO220FP Gate-source voltage: ±30V On-state resistance: 0.8Ω Mounting: THT Kind of package: tube Kind of channel: enhancement |
на замовлення 472 шт: термін постачання 14-30 дні (днів) |
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WML125N12LG2 | WAYON |
Category: THT N channel transistors Description: Transistor: N-MOSFET; unipolar; 120V; 22A; Idm: 140A; 30.5W; TO220FP Type of transistor: N-MOSFET Power dissipation: 30.5W Case: TO220FP Mounting: THT Gate charge: 30nC Kind of package: tube On-state resistance: 17mΩ Pulsed drain current: 140A Polarisation: unipolar Drain current: 22A Kind of channel: enhancement Drain-source voltage: 120V Gate-source voltage: ±20V |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||||||
| WML12N100C2 | WAYON |
Category: THT N channel transistors Description: Transistor: N-MOSFET; WMOS™ C2; unipolar; 1kV; 4A; Idm: 18A; 35W Type of transistor: N-MOSFET Technology: WMOS™ C2 Polarisation: unipolar Drain-source voltage: 1kV Drain current: 4A Pulsed drain current: 18A Power dissipation: 35W Case: TO220FP Gate-source voltage: ±30V On-state resistance: 0.8Ω Mounting: THT Gate charge: 33nC Kind of package: tube Kind of channel: enhancement |
товару немає в наявності |
В кошику од. на суму грн. | |||||||||||||
| WML12N105C2 | WAYON |
Category: THT N channel transistors Description: Transistor: N-MOSFET; WMOS™ C2; unipolar; 1.05kV; 4A; Idm: 18A; 35W Type of transistor: N-MOSFET Technology: WMOS™ C2 Polarisation: unipolar Drain-source voltage: 1.05kV Drain current: 4A Pulsed drain current: 18A Power dissipation: 35W Case: TO220FP Gate-source voltage: ±30V On-state resistance: 0.8Ω Mounting: THT Gate charge: 33nC Kind of package: tube Kind of channel: enhancement |
товару немає в наявності |
В кошику од. на суму грн. | |||||||||||||
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WML12N70D1 | WAYON |
Category: THT N channel transistors Description: Transistor: N-MOSFET; unipolar; 700V; 12A; TO220FP Type of transistor: N-MOSFET Polarisation: unipolar Drain-source voltage: 700V Drain current: 12A Case: TO220FP Gate-source voltage: ±30V On-state resistance: 0.8Ω Mounting: THT Kind of package: tube Kind of channel: enhancement |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||||||
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WML12N80M3 | WAYON |
Category: THT N channel transistorsDescription: Transistor: N-MOSFET; WMOS™ M3; unipolar; 800V; 12A; 31W; TO220FP Mounting: THT Power dissipation: 31W Polarisation: unipolar Technology: WMOS™ M3 Drain current: 12A Kind of channel: enhancement Drain-source voltage: 800V Type of transistor: N-MOSFET Gate-source voltage: ±30V Kind of package: tube Case: TO220FP On-state resistance: 620mΩ |
на замовлення 406 шт: термін постачання 14-30 дні (днів) |
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WML13N50C4 | WAYON |
Category: THT N channel transistors Description: Transistor: N-MOSFET; WMOS™ C4; unipolar; 500V; 6A; Idm: 25A; 27W Type of transistor: N-MOSFET Polarisation: unipolar Drain-source voltage: 500V Drain current: 6A Power dissipation: 27W Case: TO220FP Gate-source voltage: ±30V On-state resistance: 0.48Ω Mounting: THT Gate charge: 9.6nC Kind of channel: enhancement Pulsed drain current: 25A Technology: WMOS™ C4 Kind of package: tube |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||||||
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WML13N50D1 | WAYON |
Category: THT N channel transistors Description: Transistor: N-MOSFET; unipolar; 500V; 13A; TO220FP Type of transistor: N-MOSFET Polarisation: unipolar Drain-source voltage: 500V Drain current: 13A Case: TO220FP Gate-source voltage: ±30V On-state resistance: 0.48Ω Mounting: THT Kind of channel: enhancement Kind of package: tube |
на замовлення 536 шт: термін постачання 14-30 дні (днів) |
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WML13N65EM | WAYON |
Category: THT N channel transistors Description: Transistor: N-MOSFET; WMOS™ EM; unipolar; 650V; 6.5A; Idm: 35A; 31W Mounting: THT Type of transistor: N-MOSFET Gate-source voltage: ±30V Kind of package: tube Case: TO220FP On-state resistance: 390mΩ Pulsed drain current: 35A Power dissipation: 31W Gate charge: 20.3nC Polarisation: unipolar Technology: WMOS™ EM Drain current: 6.5A Kind of channel: enhancement Drain-source voltage: 650V |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||||||
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WML13N80M3 | WAYON |
Category: THT N channel transistorsDescription: Transistor: N-MOSFET; WMOS™ M3; unipolar; 800V; 13A; 33W; TO220FP Type of transistor: N-MOSFET Technology: WMOS™ M3 Polarisation: unipolar Drain-source voltage: 800V Drain current: 13A Power dissipation: 33W Case: TO220FP Gate-source voltage: ±30V On-state resistance: 0.48Ω Mounting: THT Kind of package: tube Kind of channel: enhancement |
на замовлення 286 шт: термін постачання 14-30 дні (днів) |
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WML14N60C4 | WAYON |
Category: THT N channel transistors Description: Transistor: N-MOSFET; WMOS™ C4; unipolar; 600V; 6A; Idm: 26A; 31W Type of transistor: N-MOSFET Polarisation: unipolar Drain-source voltage: 600V Drain current: 6A Power dissipation: 31W Case: TO220FP Gate-source voltage: ±30V On-state resistance: 0.38Ω Mounting: THT Gate charge: 13nC Kind of channel: enhancement Pulsed drain current: 26A Technology: WMOS™ C4 Kind of package: tube |
на замовлення 200 шт: термін постачання 14-30 дні (днів) |
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WML14N65C4 | WAYON |
Category: THT N channel transistorsDescription: Transistor: N-MOSFET; WMOS™ C4; unipolar; 650V; 6A; Idm: 26A; 31W Type of transistor: N-MOSFET Technology: WMOS™ C4 Polarisation: unipolar Drain-source voltage: 650V Drain current: 6A Power dissipation: 31W Case: TO220FP Gate-source voltage: ±30V On-state resistance: 0.38Ω Mounting: THT Kind of package: tube Kind of channel: enhancement Pulsed drain current: 26A Gate charge: 13nC |
на замовлення 429 шт: термін постачання 14-30 дні (днів) |
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WML15N50D1B | WAYON |
Category: THT N channel transistors Description: Transistor: N-MOSFET; WMOS™ D1; unipolar; 500V; 15A; Idm: 60A; 45W Drain-source voltage: 500V Drain current: 15A Case: TO220FP Polarisation: unipolar On-state resistance: 370mΩ Pulsed drain current: 60A Power dissipation: 45W Technology: WMOS™ D1 Kind of channel: enhancement Gate charge: 43nC Gate-source voltage: ±30V Type of transistor: N-MOSFET Kind of package: tube Mounting: THT |
на замовлення 357 шт: термін постачання 14-30 дні (днів) |
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WML15N60C4 | WAYON |
Category: THT N channel transistors Description: Transistor: N-MOSFET; WMOS™ C4; unipolar; 600V; 7.8A; Idm: 26A; 31W Mounting: THT Kind of channel: enhancement Drain-source voltage: 600V Type of transistor: N-MOSFET Gate-source voltage: ±30V Kind of package: tube Case: TO220FP On-state resistance: 0.3Ω Pulsed drain current: 26A Power dissipation: 31W Gate charge: 14.6nC Polarisation: unipolar Technology: WMOS™ C4 Drain current: 7.8A |
на замовлення 68 шт: термін постачання 14-30 дні (днів) |
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WML15N65C4 | WAYON |
Category: THT N channel transistors Description: Transistor: N-MOSFET; WMOS™ C4; unipolar; 650V; 7.8A; Idm: 26A; 31W Type of transistor: N-MOSFET Technology: WMOS™ C4 Power dissipation: 31W Case: TO220FP Mounting: THT Gate charge: 14.6nC Kind of package: tube Drain current: 7.8A Kind of channel: enhancement Drain-source voltage: 650V Gate-source voltage: ±30V On-state resistance: 0.3Ω Pulsed drain current: 26A Polarisation: unipolar |
товару немає в наявності |
Мінімальне замовлення: 500 шт В кошику од. на суму грн. | ||||||||||||
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WML15N80M3 | WAYON |
Category: THT N channel transistorsDescription: Transistor: N-MOSFET; WMOS™ M3; unipolar; 800V; 15A; 35W; TO220FP Type of transistor: N-MOSFET Technology: WMOS™ M3 Polarisation: unipolar Drain-source voltage: 800V Drain current: 15A Power dissipation: 35W Case: TO220FP Gate-source voltage: ±30V On-state resistance: 0.36Ω Mounting: THT Kind of package: tube Kind of channel: enhancement |
на замовлення 12 шт: термін постачання 14-30 дні (днів) |
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WML16N60FD | WAYON |
Category: THT N channel transistorsDescription: Transistor: N-MOSFET; WMOS™ FD; unipolar; 600V; 13A; 31W; TO220FP Type of transistor: N-MOSFET Power dissipation: 31W Case: TO220FP Mounting: THT Kind of package: tube Drain current: 13A Kind of channel: enhancement Drain-source voltage: 600V Gate-source voltage: ±30V On-state resistance: 0.32Ω Polarisation: unipolar Technology: WMOS™ FD |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||||||
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WML16N65C2 | WAYON |
Category: THT N channel transistorsDescription: Transistor: N-MOSFET; WMOS™ C2; unipolar; 650V; 13A; 31W; TO220FP Type of transistor: N-MOSFET Technology: WMOS™ C2 Polarisation: unipolar Drain-source voltage: 650V Drain current: 13A Power dissipation: 31W Case: TO220FP Gate-source voltage: ±30V On-state resistance: 0.32Ω Mounting: THT Kind of package: tube Kind of channel: enhancement |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||||||
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WML16N65FD | WAYON |
Category: THT N channel transistorsDescription: Transistor: N-MOSFET; WMOS™ FD; unipolar; 650V; 13A; 31W; TO220FP Type of transistor: N-MOSFET Technology: WMOS™ FD Polarisation: unipolar Drain-source voltage: 650V Drain current: 13A Power dissipation: 31W Case: TO220FP Gate-source voltage: ±30V On-state resistance: 0.32Ω Mounting: THT Kind of package: tube Kind of channel: enhancement |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||||||
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WML16N65SR | WAYON |
Category: THT N channel transistors Description: Transistor: N-MOSFET; WMOS™ SR; unipolar; 650V; 8.4A; Idm: 35A; 31W Type of transistor: N-MOSFET Technology: WMOS™ SR Polarisation: unipolar Drain-source voltage: 650V Drain current: 8.4A Power dissipation: 31W Case: TO220FP Gate-source voltage: ±30V On-state resistance: 0.35Ω Mounting: THT Kind of package: tube Kind of channel: enhancement Pulsed drain current: 35A Gate charge: 19.5nC |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||||||
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WML17N25JN | WAYON |
Category: THT N channel transistorsDescription: Transistor: N-MOSFET; unipolar; 250V; 6.5A; Idm: 33A; 20W; TO220FP Type of transistor: N-MOSFET Polarisation: unipolar Drain-source voltage: 250V Drain current: 6.5A Pulsed drain current: 33A Power dissipation: 20W Case: TO220FP Gate-source voltage: ±20V On-state resistance: 0.17Ω Mounting: THT Gate charge: 7.1nC Kind of package: tube Kind of channel: enhancement Reverse recovery time: 98ns |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||||||
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WML18N06TS | WAYON |
Category: THT N channel transistors Description: Transistor: N-MOSFET; unipolar; 60V; 18A; Idm: 72A; 20.2W; TO220FP Type of transistor: N-MOSFET Polarisation: unipolar Drain-source voltage: 60V Drain current: 18A Power dissipation: 20.2W Case: TO220FP Gate-source voltage: ±20V On-state resistance: 35mΩ Mounting: THT Kind of channel: enhancement Pulsed drain current: 72A Gate charge: 22nC Kind of package: tube |
на замовлення 358 шт: термін постачання 14-30 дні (днів) |
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WML18N20JN | WAYON |
Category: THT N channel transistorsDescription: Transistor: N-MOSFET; unipolar; 200V; 7A; Idm: 39A; 36W; TO220FP Type of transistor: N-MOSFET Polarisation: unipolar Drain-source voltage: 200V Drain current: 7A Power dissipation: 36W Case: TO220FP Gate-source voltage: ±20V On-state resistance: 135mΩ Mounting: THT Gate charge: 7.2nC Kind of package: tube Kind of channel: enhancement Reverse recovery time: 80ns Pulsed drain current: 39A |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||||||
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WML18N50C4 | WAYON |
Category: THT N channel transistors Description: Transistor: N-MOSFET; WMOS™ C4; unipolar; 500V; 10A; Idm: 50A; 31W Type of transistor: N-MOSFET Technology: WMOS™ C4 Polarisation: unipolar Drain-source voltage: 500V Drain current: 10A Power dissipation: 31W Case: TO220FP Gate-source voltage: ±30V On-state resistance: 0.3Ω Mounting: THT Gate charge: 13nC Kind of package: tube Kind of channel: enhancement Pulsed drain current: 50A |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||||||
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WML18N50D1B | WAYON |
Category: THT N channel transistors Description: Transistor: N-MOSFET; WMOS™ D1; unipolar; 500V; 18A; Idm: 72A; 44.6W Type of transistor: N-MOSFET Technology: WMOS™ D1 Polarisation: unipolar Drain-source voltage: 500V Drain current: 18A Power dissipation: 44.6W Case: TO220FP Gate-source voltage: ±30V On-state resistance: 0.28Ω Mounting: THT Gate charge: 40nC Kind of package: tube Kind of channel: enhancement Pulsed drain current: 72A |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||||||
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WML18N65EM | WAYON |
Category: THT N channel transistors Description: Transistor: N-MOSFET; WMOS™ EM; unipolar; 650V; 8.6A; Idm: 43A; 34W Type of transistor: N-MOSFET Technology: WMOS™ EM Polarisation: unipolar Drain-source voltage: 650V Drain current: 8.6A Pulsed drain current: 43A Power dissipation: 34W Case: TO220FP Gate-source voltage: ±30V On-state resistance: 0.28Ω Mounting: THT Gate charge: 26nC Kind of package: tube Kind of channel: enhancement |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||||||
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WML20N50D1 | WAYON |
Category: THT N channel transistors Description: Transistor: N-MOSFET; WMOS™ D1; unipolar; 500V; 20A; Idm: 80A; 45W Type of transistor: N-MOSFET Technology: WMOS™ D1 Polarisation: unipolar Drain-source voltage: 500V Drain current: 20A Power dissipation: 45W Case: TO220FP Gate-source voltage: ±30V On-state resistance: 0.22Ω Mounting: THT Gate charge: 52.5nC Kind of package: tube Kind of channel: enhancement Pulsed drain current: 80A |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||||||
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WML20N65EM | WAYON |
Category: THT N channel transistors Description: Transistor: N-MOSFET; WMOS™ EM; unipolar; 650V; 17A; 34W; TO220FP Type of transistor: N-MOSFET Technology: WMOS™ EM Power dissipation: 34W Case: TO220FP Mounting: THT Kind of package: tube Drain current: 17A Kind of channel: enhancement Drain-source voltage: 650V Gate-source voltage: ±30V On-state resistance: 0.24Ω Polarisation: unipolar |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||||||
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WML20N70D1 | WAYON |
Category: THT N channel transistors Description: Transistor: N-MOSFET; WMOS™ D1; unipolar; 700V; 20A; Idm: 80A; 45W Type of transistor: N-MOSFET Polarisation: unipolar Drain-source voltage: 700V Drain current: 20A Pulsed drain current: 80A Power dissipation: 45W Case: TO220FP Gate-source voltage: ±30V On-state resistance: 0.42Ω Mounting: THT Gate charge: 66nC Kind of package: tube Kind of channel: enhancement Technology: WMOS™ D1 |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||||||
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WML22N50C4 | WAYON |
Category: THT N channel transistors Description: Transistor: N-MOSFET; WMOS™ C4; unipolar; 500V; 11A; Idm: 60A; 31W Type of transistor: N-MOSFET Polarisation: unipolar Drain-source voltage: 500V Drain current: 11A Power dissipation: 31W Case: TO220FP Gate-source voltage: ±30V On-state resistance: 0.27Ω Mounting: THT Gate charge: 14.6nC Kind of package: tube Kind of channel: enhancement Pulsed drain current: 60A Technology: WMOS™ C4 |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||||||
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WML25N50C4 | WAYON |
Category: THT N channel transistors Description: Transistor: N-MOSFET; WMOS™ C4; unipolar; 500V; 13A; Idm: 65A; 31W Polarisation: unipolar Technology: WMOS™ C4 Drain current: 13A Kind of channel: enhancement Drain-source voltage: 500V Type of transistor: N-MOSFET Gate-source voltage: ±30V Kind of package: tube Case: TO220FP On-state resistance: 0.16Ω Mounting: THT Pulsed drain current: 65A Power dissipation: 31W Gate charge: 22.1nC |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||||||
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WML25N50D1B | WAYON |
Category: THT N channel transistors Description: Transistor: N-MOSFET; WMOS™ D1; unipolar; 500V; 25A; TO220FP Polarisation: unipolar Technology: WMOS™ D1 Drain current: 25A Kind of channel: enhancement Drain-source voltage: 500V Type of transistor: N-MOSFET Gate-source voltage: ±30V Kind of package: tube Case: TO220FP On-state resistance: 0.27Ω Mounting: THT |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||||||
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WML25N65EM | WAYON |
Category: THT N channel transistors Description: Transistor: N-MOSFET; WMOS™ EM; unipolar; 650V; 13A; Idm: 80A; 34W Type of transistor: N-MOSFET Power dissipation: 34W Case: TO220FP Mounting: THT Gate charge: 36nC Kind of package: tube Pulsed drain current: 80A Polarisation: unipolar Technology: WMOS™ EM Drain current: 13A Kind of channel: enhancement Drain-source voltage: 650V Gate-source voltage: ±30V On-state resistance: 0.19Ω |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||||||
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WML26N60C4 | WAYON |
Category: THT N channel transistors Description: Transistor: N-MOSFET; WMOS™ C4; unipolar; 600V; 10.5A; Idm: 40A; 31W Type of transistor: N-MOSFET Technology: WMOS™ C4 Polarisation: unipolar Drain-source voltage: 600V Drain current: 10.5A Power dissipation: 31W Case: TO220FP Gate-source voltage: ±30V On-state resistance: 0.19Ω Mounting: THT Gate charge: 22.1nC Kind of package: tube Kind of channel: enhancement Pulsed drain current: 40A |
на замовлення 391 шт: термін постачання 14-30 дні (днів) |
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WML26N60F2 | WAYON |
Category: THT N channel transistors Description: Transistor: N-MOSFET; WMOS™ F2; unipolar; 600V; 10.5A; Idm: 40A; 31W Type of transistor: N-MOSFET Technology: WMOS™ F2 Polarisation: unipolar Drain-source voltage: 600V Drain current: 10.5A Power dissipation: 31W Case: TO220FP Gate-source voltage: ±30V On-state resistance: 0.21Ω Mounting: THT Gate charge: 22.1nC Kind of package: tube Kind of channel: enhancement Pulsed drain current: 40A |
на замовлення 85 шт: термін постачання 14-30 дні (днів) |
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WML26N60FD | WAYON |
Category: THT N channel transistorsDescription: Transistor: N-MOSFET; WMOS™ FD; unipolar; 600V; 20A; 34W; TO220FP Type of transistor: N-MOSFET Technology: WMOS™ FD Polarisation: unipolar Drain-source voltage: 600V Drain current: 20A Power dissipation: 34W Case: TO220FP Gate-source voltage: ±30V On-state resistance: 0.2Ω Mounting: THT Kind of package: tube Kind of channel: enhancement |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||||||
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WML26N65C4 | WAYON |
Category: THT N channel transistorsDescription: Transistor: N-MOSFET; WMOS™ C4; unipolar; 650V; 10.5A; Idm: 40A Type of transistor: N-MOSFET Technology: WMOS™ C4 Polarisation: unipolar Drain-source voltage: 650V Drain current: 10.5A Pulsed drain current: 40A Power dissipation: 135W Case: TO220FP Gate-source voltage: ±30V On-state resistance: 0.19Ω Mounting: THT Kind of package: tube Kind of channel: enhancement Heatsink thickness: 1.2...1.45mm |
на замовлення 178 шт: термін постачання 14-30 дні (днів) |
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| WML07N100C2 |
Виробник: WAYON
Category: THT N channel transistors
Description: Transistor: N-MOSFET; WMOS™ C2; unipolar; 1kV; 2.2A; Idm: 12A; 27W
Type of transistor: N-MOSFET
Technology: WMOS™ C2
Polarisation: unipolar
Drain-source voltage: 1kV
Drain current: 2.2A
Power dissipation: 27W
Case: TO220FP
Gate-source voltage: ±30V
On-state resistance: 2.5Ω
Mounting: THT
Gate charge: 15.8nC
Kind of package: tube
Kind of channel: enhancement
Pulsed drain current: 12A
Category: THT N channel transistors
Description: Transistor: N-MOSFET; WMOS™ C2; unipolar; 1kV; 2.2A; Idm: 12A; 27W
Type of transistor: N-MOSFET
Technology: WMOS™ C2
Polarisation: unipolar
Drain-source voltage: 1kV
Drain current: 2.2A
Power dissipation: 27W
Case: TO220FP
Gate-source voltage: ±30V
On-state resistance: 2.5Ω
Mounting: THT
Gate charge: 15.8nC
Kind of package: tube
Kind of channel: enhancement
Pulsed drain current: 12A
товару немає в наявності
В кошику
од. на суму грн.
| WML07N60C2 |
![]() |
Виробник: WAYON
Category: THT N channel transistors
Description: Transistor: N-MOSFET; WMOS™ C2; unipolar; 600V; 5A; 23W; TO220FP
Type of transistor: N-MOSFET
Technology: WMOS™ C2
Polarisation: unipolar
Drain-source voltage: 600V
Drain current: 5A
Power dissipation: 23W
Case: TO220FP
Gate-source voltage: ±30V
On-state resistance: 1.14Ω
Mounting: THT
Kind of package: tube
Kind of channel: enhancement
Category: THT N channel transistors
Description: Transistor: N-MOSFET; WMOS™ C2; unipolar; 600V; 5A; 23W; TO220FP
Type of transistor: N-MOSFET
Technology: WMOS™ C2
Polarisation: unipolar
Drain-source voltage: 600V
Drain current: 5A
Power dissipation: 23W
Case: TO220FP
Gate-source voltage: ±30V
On-state resistance: 1.14Ω
Mounting: THT
Kind of package: tube
Kind of channel: enhancement
на замовлення 425 шт:
термін постачання 14-30 дні (днів)
| Кількість | Ціна без ПДВ |
|---|---|
| 7+ | 67.18 грн |
| 14+ | 32.81 грн |
| 25+ | 28.63 грн |
| 35+ | 28.54 грн |
| 95+ | 26.92 грн |
| 100+ | 25.98 грн |
| WML07N60C4 |
Виробник: WAYON
Category: THT N channel transistors
Description: Transistor: N-MOSFET; WMOS™ C4; unipolar; 600V; 2.8A; Idm: 9A; 23W
Type of transistor: N-MOSFET
Technology: WMOS™ C4
Polarisation: unipolar
Drain-source voltage: 600V
Drain current: 2.8A
Power dissipation: 23W
Case: TO220FP
Gate-source voltage: ±30V
On-state resistance: 1.14Ω
Mounting: THT
Kind of package: tube
Kind of channel: enhancement
Pulsed drain current: 9A
Gate charge: 5.2nC
Category: THT N channel transistors
Description: Transistor: N-MOSFET; WMOS™ C4; unipolar; 600V; 2.8A; Idm: 9A; 23W
Type of transistor: N-MOSFET
Technology: WMOS™ C4
Polarisation: unipolar
Drain-source voltage: 600V
Drain current: 2.8A
Power dissipation: 23W
Case: TO220FP
Gate-source voltage: ±30V
On-state resistance: 1.14Ω
Mounting: THT
Kind of package: tube
Kind of channel: enhancement
Pulsed drain current: 9A
Gate charge: 5.2nC
на замовлення 381 шт:
термін постачання 14-30 дні (днів)
| Кількість | Ціна без ПДВ |
|---|---|
| 9+ | 55.21 грн |
| 10+ | 46.14 грн |
| 12+ | 38.54 грн |
| 25+ | 34.69 грн |
| 36+ | 27.43 грн |
| 98+ | 25.98 грн |
| WML07N65C4 |
Виробник: WAYON
Category: THT N channel transistors
Description: Transistor: N-MOSFET; WMOS™ C4; unipolar; 650V; 2.8A; Idm: 9A; 23W
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 650V
Drain current: 2.8A
Case: TO220FP
Gate-source voltage: ±30V
On-state resistance: 1.14Ω
Mounting: THT
Gate charge: 5.2nC
Kind of channel: enhancement
Pulsed drain current: 9A
Power dissipation: 23W
Technology: WMOS™ C4
Kind of package: tube
Category: THT N channel transistors
Description: Transistor: N-MOSFET; WMOS™ C4; unipolar; 650V; 2.8A; Idm: 9A; 23W
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 650V
Drain current: 2.8A
Case: TO220FP
Gate-source voltage: ±30V
On-state resistance: 1.14Ω
Mounting: THT
Gate charge: 5.2nC
Kind of channel: enhancement
Pulsed drain current: 9A
Power dissipation: 23W
Technology: WMOS™ C4
Kind of package: tube
товару немає в наявності
В кошику
од. на суму грн.
| WML07N70C4 |
Виробник: WAYON
Category: THT N channel transistors
Description: Transistor: N-MOSFET; WMOS™ C4; unipolar; 700V; 2.8A; Idm: 9A; 23W
Type of transistor: N-MOSFET
Technology: WMOS™ C4
Polarisation: unipolar
Drain-source voltage: 700V
Drain current: 2.8A
Power dissipation: 23W
Case: TO220FP
Gate-source voltage: ±30V
On-state resistance: 1.14Ω
Mounting: THT
Kind of package: tube
Kind of channel: enhancement
Pulsed drain current: 9A
Gate charge: 5.2nC
Category: THT N channel transistors
Description: Transistor: N-MOSFET; WMOS™ C4; unipolar; 700V; 2.8A; Idm: 9A; 23W
Type of transistor: N-MOSFET
Technology: WMOS™ C4
Polarisation: unipolar
Drain-source voltage: 700V
Drain current: 2.8A
Power dissipation: 23W
Case: TO220FP
Gate-source voltage: ±30V
On-state resistance: 1.14Ω
Mounting: THT
Kind of package: tube
Kind of channel: enhancement
Pulsed drain current: 9A
Gate charge: 5.2nC
товару немає в наявності
В кошику
од. на суму грн.
| WML080N10HG2 |
Виробник: WAYON
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 100V; 26A; Idm: 168A; 28.4W; TO220FP
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 100V
Drain current: 26A
Power dissipation: 28.4W
Case: TO220FP
Gate-source voltage: ±20V
On-state resistance: 8.8mΩ
Mounting: THT
Kind of channel: enhancement
Pulsed drain current: 168A
Gate charge: 25.4nC
Kind of package: tube
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 100V; 26A; Idm: 168A; 28.4W; TO220FP
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 100V
Drain current: 26A
Power dissipation: 28.4W
Case: TO220FP
Gate-source voltage: ±20V
On-state resistance: 8.8mΩ
Mounting: THT
Kind of channel: enhancement
Pulsed drain current: 168A
Gate charge: 25.4nC
Kind of package: tube
на замовлення 293 шт:
термін постачання 14-30 дні (днів)
| Кількість | Ціна без ПДВ |
|---|---|
| 8+ | 58.89 грн |
| 10+ | 45.63 грн |
| 50+ | 38.11 грн |
| 250+ | 34.18 грн |
| WML08N60C4 |
Виробник: WAYON
Category: THT N channel transistors
Description: Transistor: N-MOSFET; WMOS™ C4; unipolar; 600V; 3.6A; Idm: 12A; 26W
Type of transistor: N-MOSFET
Technology: WMOS™ C4
Power dissipation: 26W
Case: TO220FP
Mounting: THT
Gate charge: 7.3nC
Kind of package: tube
Pulsed drain current: 12A
Polarisation: unipolar
Drain current: 3.6A
Kind of channel: enhancement
Drain-source voltage: 600V
Gate-source voltage: ±30V
On-state resistance: 780mΩ
Category: THT N channel transistors
Description: Transistor: N-MOSFET; WMOS™ C4; unipolar; 600V; 3.6A; Idm: 12A; 26W
Type of transistor: N-MOSFET
Technology: WMOS™ C4
Power dissipation: 26W
Case: TO220FP
Mounting: THT
Gate charge: 7.3nC
Kind of package: tube
Pulsed drain current: 12A
Polarisation: unipolar
Drain current: 3.6A
Kind of channel: enhancement
Drain-source voltage: 600V
Gate-source voltage: ±30V
On-state resistance: 780mΩ
на замовлення 356 шт:
термін постачання 14-30 дні (днів)
| Кількість | Ціна без ПДВ |
|---|---|
| 7+ | 62.98 грн |
| 10+ | 52.81 грн |
| 25+ | 47.60 грн |
| 26+ | 37.60 грн |
| 71+ | 35.55 грн |
| WML08N65C4 |
Виробник: WAYON
Category: THT N channel transistors
Description: Transistor: N-MOSFET; WMOS™ C4; unipolar; 650V; 3.6A; Idm: 12A; 26W
Type of transistor: N-MOSFET
Technology: WMOS™ C4
Polarisation: unipolar
Drain-source voltage: 650V
Drain current: 3.6A
Power dissipation: 26W
Case: TO220FP
Gate-source voltage: ±30V
On-state resistance: 780mΩ
Mounting: THT
Kind of package: tube
Kind of channel: enhancement
Pulsed drain current: 12A
Gate charge: 7.3nC
Category: THT N channel transistors
Description: Transistor: N-MOSFET; WMOS™ C4; unipolar; 650V; 3.6A; Idm: 12A; 26W
Type of transistor: N-MOSFET
Technology: WMOS™ C4
Polarisation: unipolar
Drain-source voltage: 650V
Drain current: 3.6A
Power dissipation: 26W
Case: TO220FP
Gate-source voltage: ±30V
On-state resistance: 780mΩ
Mounting: THT
Kind of package: tube
Kind of channel: enhancement
Pulsed drain current: 12A
Gate charge: 7.3nC
товару немає в наявності
В кошику
од. на суму грн.
| WML08N80M3 |
![]() |
Виробник: WAYON
Category: THT N channel transistors
Description: Transistor: N-MOSFET; WMOS™ M3; unipolar; 800V; 7A; 29W; TO220FP
Mounting: THT
Power dissipation: 29W
Polarisation: unipolar
Technology: WMOS™ M3
Drain current: 7A
Kind of channel: enhancement
Drain-source voltage: 800V
Type of transistor: N-MOSFET
Gate-source voltage: ±30V
Kind of package: tube
Case: TO220FP
On-state resistance: 1.38Ω
Category: THT N channel transistors
Description: Transistor: N-MOSFET; WMOS™ M3; unipolar; 800V; 7A; 29W; TO220FP
Mounting: THT
Power dissipation: 29W
Polarisation: unipolar
Technology: WMOS™ M3
Drain current: 7A
Kind of channel: enhancement
Drain-source voltage: 800V
Type of transistor: N-MOSFET
Gate-source voltage: ±30V
Kind of package: tube
Case: TO220FP
On-state resistance: 1.38Ω
на замовлення 334 шт:
термін постачання 14-30 дні (днів)
| Кількість | Ціна без ПДВ |
|---|---|
| 6+ | 79.14 грн |
| 8+ | 59.47 грн |
| 21+ | 46.74 грн |
| 58+ | 44.18 грн |
| WML10N100C2 |
Виробник: WAYON
Category: THT N channel transistors
Description: Transistor: N-MOSFET; WMOS™ C2; unipolar; 1kV; 3.3A; Idm: 18A; 31W
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 1kV
Drain current: 3.3A
Pulsed drain current: 18A
Power dissipation: 31W
Case: TO220FP
Gate-source voltage: ±30V
On-state resistance: 1.4Ω
Mounting: THT
Gate charge: 18.8nC
Kind of package: tube
Kind of channel: enhancement
Technology: WMOS™ C2
Category: THT N channel transistors
Description: Transistor: N-MOSFET; WMOS™ C2; unipolar; 1kV; 3.3A; Idm: 18A; 31W
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 1kV
Drain current: 3.3A
Pulsed drain current: 18A
Power dissipation: 31W
Case: TO220FP
Gate-source voltage: ±30V
On-state resistance: 1.4Ω
Mounting: THT
Gate charge: 18.8nC
Kind of package: tube
Kind of channel: enhancement
Technology: WMOS™ C2
товару немає в наявності
В кошику
од. на суму грн.
| WML10N50C4 |
Виробник: WAYON
Category: THT N channel transistors
Description: Transistor: N-MOSFET; WMOS™ C4; unipolar; 500V; 4.8A; Idm: 16A; 26W
Type of transistor: N-MOSFET
Technology: WMOS™ C4
Polarisation: unipolar
Drain-source voltage: 500V
Drain current: 4.8A
Pulsed drain current: 16A
Power dissipation: 26W
Case: TO220FP
Gate-source voltage: ±30V
On-state resistance: 0.63Ω
Mounting: THT
Gate charge: 7.3nC
Kind of package: tube
Kind of channel: enhancement
Category: THT N channel transistors
Description: Transistor: N-MOSFET; WMOS™ C4; unipolar; 500V; 4.8A; Idm: 16A; 26W
Type of transistor: N-MOSFET
Technology: WMOS™ C4
Polarisation: unipolar
Drain-source voltage: 500V
Drain current: 4.8A
Pulsed drain current: 16A
Power dissipation: 26W
Case: TO220FP
Gate-source voltage: ±30V
On-state resistance: 0.63Ω
Mounting: THT
Gate charge: 7.3nC
Kind of package: tube
Kind of channel: enhancement
товару немає в наявності
В кошику
од. на суму грн.
| WML10N60C4 |
Виробник: WAYON
Category: THT N channel transistors
Description: Transistor: N-MOSFET; WMOS™ C4; unipolar; 600V; 4.8A; Idm: 19A; 27W
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 600V
Drain current: 4.8A
Power dissipation: 27W
Case: TO220FP
Gate-source voltage: ±30V
On-state resistance: 0.6Ω
Mounting: THT
Gate charge: 9.6nC
Kind of channel: enhancement
Kind of package: tube
Pulsed drain current: 19A
Technology: WMOS™ C4
Category: THT N channel transistors
Description: Transistor: N-MOSFET; WMOS™ C4; unipolar; 600V; 4.8A; Idm: 19A; 27W
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 600V
Drain current: 4.8A
Power dissipation: 27W
Case: TO220FP
Gate-source voltage: ±30V
On-state resistance: 0.6Ω
Mounting: THT
Gate charge: 9.6nC
Kind of channel: enhancement
Kind of package: tube
Pulsed drain current: 19A
Technology: WMOS™ C4
на замовлення 194 шт:
термін постачання 14-30 дні (днів)
| Кількість | Ціна без ПДВ |
|---|---|
| 6+ | 82.82 грн |
| 7+ | 68.10 грн |
| 10+ | 57.42 грн |
| 24+ | 40.67 грн |
| 66+ | 38.45 грн |
| WML10N65C2 |
![]() |
Виробник: WAYON
Category: THT N channel transistors
Description: Transistor: N-MOSFET; WMOS™ C2; unipolar; 650V; 8A; 27W; TO220FP
Type of transistor: N-MOSFET
Technology: WMOS™ C2
Polarisation: unipolar
Drain-source voltage: 650V
Drain current: 8A
Power dissipation: 27W
Case: TO220FP
Gate-source voltage: ±30V
On-state resistance: 690mΩ
Mounting: THT
Kind of package: tube
Kind of channel: enhancement
Category: THT N channel transistors
Description: Transistor: N-MOSFET; WMOS™ C2; unipolar; 650V; 8A; 27W; TO220FP
Type of transistor: N-MOSFET
Technology: WMOS™ C2
Polarisation: unipolar
Drain-source voltage: 650V
Drain current: 8A
Power dissipation: 27W
Case: TO220FP
Gate-source voltage: ±30V
On-state resistance: 690mΩ
Mounting: THT
Kind of package: tube
Kind of channel: enhancement
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В кошику
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| WML10N65C4 |
Виробник: WAYON
Category: THT N channel transistors
Description: Transistor: N-MOSFET; WMOS™ C4; unipolar; 650V; 4.8A; Idm: 19A; 27W
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 650V
Drain current: 4.8A
Power dissipation: 27W
Case: TO220FP
Gate-source voltage: ±30V
On-state resistance: 0.6Ω
Mounting: THT
Gate charge: 9.6nC
Kind of channel: enhancement
Kind of package: tube
Pulsed drain current: 19A
Technology: WMOS™ C4
Category: THT N channel transistors
Description: Transistor: N-MOSFET; WMOS™ C4; unipolar; 650V; 4.8A; Idm: 19A; 27W
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 650V
Drain current: 4.8A
Power dissipation: 27W
Case: TO220FP
Gate-source voltage: ±30V
On-state resistance: 0.6Ω
Mounting: THT
Gate charge: 9.6nC
Kind of channel: enhancement
Kind of package: tube
Pulsed drain current: 19A
Technology: WMOS™ C4
товару немає в наявності
В кошику
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| WML10N65EM |
Виробник: WAYON
Category: THT N channel transistors
Description: Transistor: N-MOSFET; WMOS™ EM; unipolar; 650V; 4.8A; Idm: 24A; 28W
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 650V
Drain current: 4.8A
Power dissipation: 28W
Case: TO220FP
Gate-source voltage: ±30V
On-state resistance: 0.6Ω
Mounting: THT
Gate charge: 13.5nC
Kind of channel: enhancement
Kind of package: tube
Pulsed drain current: 24A
Technology: WMOS™ EM
Category: THT N channel transistors
Description: Transistor: N-MOSFET; WMOS™ EM; unipolar; 650V; 4.8A; Idm: 24A; 28W
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 650V
Drain current: 4.8A
Power dissipation: 28W
Case: TO220FP
Gate-source voltage: ±30V
On-state resistance: 0.6Ω
Mounting: THT
Gate charge: 13.5nC
Kind of channel: enhancement
Kind of package: tube
Pulsed drain current: 24A
Technology: WMOS™ EM
товару немає в наявності
В кошику
од. на суму грн.
| WML10N70C4 |
Виробник: WAYON
Category: THT N channel transistors
Description: Transistor: N-MOSFET; WMOS™ C4; unipolar; 700V; 4.8A; Idm: 19A; 27W
Type of transistor: N-MOSFET
Technology: WMOS™ C4
Polarisation: unipolar
Drain-source voltage: 700V
Drain current: 4.8A
Power dissipation: 27W
Case: TO220FP
Gate-source voltage: ±30V
On-state resistance: 0.6Ω
Mounting: THT
Kind of package: tube
Kind of channel: enhancement
Pulsed drain current: 19A
Gate charge: 9.6nC
Category: THT N channel transistors
Description: Transistor: N-MOSFET; WMOS™ C4; unipolar; 700V; 4.8A; Idm: 19A; 27W
Type of transistor: N-MOSFET
Technology: WMOS™ C4
Polarisation: unipolar
Drain-source voltage: 700V
Drain current: 4.8A
Power dissipation: 27W
Case: TO220FP
Gate-source voltage: ±30V
On-state resistance: 0.6Ω
Mounting: THT
Kind of package: tube
Kind of channel: enhancement
Pulsed drain current: 19A
Gate charge: 9.6nC
товару немає в наявності
В кошику
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| WML10N70D1 |
Виробник: WAYON
Category: THT N channel transistors
Description: Transistor: N-MOSFET; WMOS™ D1; unipolar; 700V; 10A; Idm: 40A; 62.5W
Type of transistor: N-MOSFET
Technology: WMOS™ D1
Polarisation: unipolar
Drain-source voltage: 700V
Drain current: 10A
Power dissipation: 62.5W
Case: TO220FP
Gate-source voltage: ±30V
On-state resistance: 880mΩ
Mounting: THT
Kind of package: tube
Kind of channel: enhancement
Pulsed drain current: 40A
Gate charge: 25nC
Category: THT N channel transistors
Description: Transistor: N-MOSFET; WMOS™ D1; unipolar; 700V; 10A; Idm: 40A; 62.5W
Type of transistor: N-MOSFET
Technology: WMOS™ D1
Polarisation: unipolar
Drain-source voltage: 700V
Drain current: 10A
Power dissipation: 62.5W
Case: TO220FP
Gate-source voltage: ±30V
On-state resistance: 880mΩ
Mounting: THT
Kind of package: tube
Kind of channel: enhancement
Pulsed drain current: 40A
Gate charge: 25nC
товару немає в наявності
В кошику
од. на суму грн.
| WML10N70EM |
Виробник: WAYON
Category: THT N channel transistors
Description: Transistor: N-MOSFET; WMOS™ EM; unipolar; 700V; 4.8A; Idm: 24A; 28W
Type of transistor: N-MOSFET
Technology: WMOS™ EM
Polarisation: unipolar
Drain-source voltage: 700V
Drain current: 4.8A
Power dissipation: 28W
Case: TO220FP
Gate-source voltage: ±30V
On-state resistance: 0.6Ω
Mounting: THT
Kind of package: tube
Kind of channel: enhancement
Pulsed drain current: 24A
Gate charge: 13.5nC
Category: THT N channel transistors
Description: Transistor: N-MOSFET; WMOS™ EM; unipolar; 700V; 4.8A; Idm: 24A; 28W
Type of transistor: N-MOSFET
Technology: WMOS™ EM
Polarisation: unipolar
Drain-source voltage: 700V
Drain current: 4.8A
Power dissipation: 28W
Case: TO220FP
Gate-source voltage: ±30V
On-state resistance: 0.6Ω
Mounting: THT
Kind of package: tube
Kind of channel: enhancement
Pulsed drain current: 24A
Gate charge: 13.5nC
товару немає в наявності
В кошику
од. на суму грн.
| WML10N80D1 |
Виробник: WAYON
Category: THT N channel transistors
Description: Transistor: N-MOSFET; WMOS™ D1; unipolar; 800V; 10A; Idm: 40A; 62.5W
Type of transistor: N-MOSFET
Technology: WMOS™ D1
Polarisation: unipolar
Drain-source voltage: 800V
Drain current: 10A
Power dissipation: 62.5W
Case: TO220FP
Gate-source voltage: ±30V
On-state resistance: 910mΩ
Mounting: THT
Kind of package: tube
Kind of channel: enhancement
Pulsed drain current: 40A
Gate charge: 33nC
Category: THT N channel transistors
Description: Transistor: N-MOSFET; WMOS™ D1; unipolar; 800V; 10A; Idm: 40A; 62.5W
Type of transistor: N-MOSFET
Technology: WMOS™ D1
Polarisation: unipolar
Drain-source voltage: 800V
Drain current: 10A
Power dissipation: 62.5W
Case: TO220FP
Gate-source voltage: ±30V
On-state resistance: 910mΩ
Mounting: THT
Kind of package: tube
Kind of channel: enhancement
Pulsed drain current: 40A
Gate charge: 33nC
товару немає в наявності
В кошику
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| WML10N80D1B |
Виробник: WAYON
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 800V; 10A; Idm: 40A; 62.5W; TO220FP
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 800V
Drain current: 10A
Pulsed drain current: 40A
Power dissipation: 62.5W
Case: TO220FP
Gate-source voltage: ±30V
On-state resistance: 910mΩ
Mounting: THT
Gate charge: 33nC
Kind of package: tube
Kind of channel: enhancement
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 800V; 10A; Idm: 40A; 62.5W; TO220FP
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 800V
Drain current: 10A
Pulsed drain current: 40A
Power dissipation: 62.5W
Case: TO220FP
Gate-source voltage: ±30V
On-state resistance: 910mΩ
Mounting: THT
Gate charge: 33nC
Kind of package: tube
Kind of channel: enhancement
на замовлення 140 шт:
термін постачання 14-30 дні (днів)
| Кількість | Ціна без ПДВ |
|---|---|
| 7+ | 66.26 грн |
| 10+ | 50.59 грн |
| 24+ | 40.67 грн |
| 66+ | 38.45 грн |
| WML10N80M3 |
![]() |
Виробник: WAYON
Category: THT N channel transistors
Description: Transistor: N-MOSFET; WMOS™ M3; unipolar; 800V; 10A; 31W; TO220FP
Type of transistor: N-MOSFET
Technology: WMOS™ M3
Polarisation: unipolar
Drain-source voltage: 800V
Drain current: 10A
Power dissipation: 31W
Case: TO220FP
Gate-source voltage: ±30V
On-state resistance: 1.03Ω
Mounting: THT
Kind of package: tube
Kind of channel: enhancement
Category: THT N channel transistors
Description: Transistor: N-MOSFET; WMOS™ M3; unipolar; 800V; 10A; 31W; TO220FP
Type of transistor: N-MOSFET
Technology: WMOS™ M3
Polarisation: unipolar
Drain-source voltage: 800V
Drain current: 10A
Power dissipation: 31W
Case: TO220FP
Gate-source voltage: ±30V
On-state resistance: 1.03Ω
Mounting: THT
Kind of package: tube
Kind of channel: enhancement
на замовлення 370 шт:
термін постачання 14-30 дні (днів)
| Кількість | Ціна без ПДВ |
|---|---|
| 6+ | 76.90 грн |
| 18+ | 55.54 грн |
| 49+ | 52.12 грн |
| WML11N65C2 |
Виробник: WAYON
Category: THT N channel transistors
Description: Transistor: N-MOSFET; WMOS™ C2; unipolar; 650V; 9A; 28W; TO220FP
Type of transistor: N-MOSFET
Technology: WMOS™ C2
Polarisation: unipolar
Drain-source voltage: 650V
Drain current: 9A
Power dissipation: 28W
Case: TO220FP
Gate-source voltage: ±30V
On-state resistance: 0.54Ω
Mounting: THT
Kind of package: tube
Kind of channel: enhancement
Category: THT N channel transistors
Description: Transistor: N-MOSFET; WMOS™ C2; unipolar; 650V; 9A; 28W; TO220FP
Type of transistor: N-MOSFET
Technology: WMOS™ C2
Polarisation: unipolar
Drain-source voltage: 650V
Drain current: 9A
Power dissipation: 28W
Case: TO220FP
Gate-source voltage: ±30V
On-state resistance: 0.54Ω
Mounting: THT
Kind of package: tube
Kind of channel: enhancement
на замовлення 423 шт:
термін постачання 14-30 дні (днів)
| Кількість | Ціна без ПДВ |
|---|---|
| 7+ | 69.02 грн |
| 8+ | 56.57 грн |
| 22+ | 44.60 грн |
| 60+ | 42.13 грн |
| WML11N65SR |
Виробник: WAYON
Category: THT N channel transistors
Description: Transistor: N-MOSFET; WMOS™ SR; unipolar; 650V; 5.4A; Idm: 19A; 28W
Type of transistor: N-MOSFET
Technology: WMOS™ SR
Polarisation: unipolar
Drain-source voltage: 650V
Drain current: 5.4A
Power dissipation: 28W
Case: TO220FP
Gate-source voltage: ±30V
On-state resistance: 0.6Ω
Mounting: THT
Kind of package: tube
Kind of channel: enhancement
Pulsed drain current: 19A
Gate charge: 13.7nC
Category: THT N channel transistors
Description: Transistor: N-MOSFET; WMOS™ SR; unipolar; 650V; 5.4A; Idm: 19A; 28W
Type of transistor: N-MOSFET
Technology: WMOS™ SR
Polarisation: unipolar
Drain-source voltage: 650V
Drain current: 5.4A
Power dissipation: 28W
Case: TO220FP
Gate-source voltage: ±30V
On-state resistance: 0.6Ω
Mounting: THT
Kind of package: tube
Kind of channel: enhancement
Pulsed drain current: 19A
Gate charge: 13.7nC
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| WML11N80M3 |
Виробник: WAYON
Category: THT N channel transistors
Description: Transistor: N-MOSFET; WMOS™ M3; unipolar; 800V; 10.5A; 31W; TO220FP
Type of transistor: N-MOSFET
Technology: WMOS™ M3
Polarisation: unipolar
Drain-source voltage: 800V
Drain current: 10.5A
Power dissipation: 31W
Case: TO220FP
Gate-source voltage: ±30V
On-state resistance: 0.8Ω
Mounting: THT
Kind of package: tube
Kind of channel: enhancement
Category: THT N channel transistors
Description: Transistor: N-MOSFET; WMOS™ M3; unipolar; 800V; 10.5A; 31W; TO220FP
Type of transistor: N-MOSFET
Technology: WMOS™ M3
Polarisation: unipolar
Drain-source voltage: 800V
Drain current: 10.5A
Power dissipation: 31W
Case: TO220FP
Gate-source voltage: ±30V
On-state resistance: 0.8Ω
Mounting: THT
Kind of package: tube
Kind of channel: enhancement
на замовлення 472 шт:
термін постачання 14-30 дні (днів)
| Кількість | Ціна без ПДВ |
|---|---|
| 5+ | 85.45 грн |
| 15+ | 68.36 грн |
| 39+ | 64.94 грн |
| WML125N12LG2 |
Виробник: WAYON
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 120V; 22A; Idm: 140A; 30.5W; TO220FP
Type of transistor: N-MOSFET
Power dissipation: 30.5W
Case: TO220FP
Mounting: THT
Gate charge: 30nC
Kind of package: tube
On-state resistance: 17mΩ
Pulsed drain current: 140A
Polarisation: unipolar
Drain current: 22A
Kind of channel: enhancement
Drain-source voltage: 120V
Gate-source voltage: ±20V
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 120V; 22A; Idm: 140A; 30.5W; TO220FP
Type of transistor: N-MOSFET
Power dissipation: 30.5W
Case: TO220FP
Mounting: THT
Gate charge: 30nC
Kind of package: tube
On-state resistance: 17mΩ
Pulsed drain current: 140A
Polarisation: unipolar
Drain current: 22A
Kind of channel: enhancement
Drain-source voltage: 120V
Gate-source voltage: ±20V
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| WML12N100C2 |
Виробник: WAYON
Category: THT N channel transistors
Description: Transistor: N-MOSFET; WMOS™ C2; unipolar; 1kV; 4A; Idm: 18A; 35W
Type of transistor: N-MOSFET
Technology: WMOS™ C2
Polarisation: unipolar
Drain-source voltage: 1kV
Drain current: 4A
Pulsed drain current: 18A
Power dissipation: 35W
Case: TO220FP
Gate-source voltage: ±30V
On-state resistance: 0.8Ω
Mounting: THT
Gate charge: 33nC
Kind of package: tube
Kind of channel: enhancement
Category: THT N channel transistors
Description: Transistor: N-MOSFET; WMOS™ C2; unipolar; 1kV; 4A; Idm: 18A; 35W
Type of transistor: N-MOSFET
Technology: WMOS™ C2
Polarisation: unipolar
Drain-source voltage: 1kV
Drain current: 4A
Pulsed drain current: 18A
Power dissipation: 35W
Case: TO220FP
Gate-source voltage: ±30V
On-state resistance: 0.8Ω
Mounting: THT
Gate charge: 33nC
Kind of package: tube
Kind of channel: enhancement
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В кошику
од. на суму грн.
| WML12N105C2 |
Виробник: WAYON
Category: THT N channel transistors
Description: Transistor: N-MOSFET; WMOS™ C2; unipolar; 1.05kV; 4A; Idm: 18A; 35W
Type of transistor: N-MOSFET
Technology: WMOS™ C2
Polarisation: unipolar
Drain-source voltage: 1.05kV
Drain current: 4A
Pulsed drain current: 18A
Power dissipation: 35W
Case: TO220FP
Gate-source voltage: ±30V
On-state resistance: 0.8Ω
Mounting: THT
Gate charge: 33nC
Kind of package: tube
Kind of channel: enhancement
Category: THT N channel transistors
Description: Transistor: N-MOSFET; WMOS™ C2; unipolar; 1.05kV; 4A; Idm: 18A; 35W
Type of transistor: N-MOSFET
Technology: WMOS™ C2
Polarisation: unipolar
Drain-source voltage: 1.05kV
Drain current: 4A
Pulsed drain current: 18A
Power dissipation: 35W
Case: TO220FP
Gate-source voltage: ±30V
On-state resistance: 0.8Ω
Mounting: THT
Gate charge: 33nC
Kind of package: tube
Kind of channel: enhancement
товару немає в наявності
В кошику
од. на суму грн.
| WML12N70D1 |
Виробник: WAYON
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 700V; 12A; TO220FP
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 700V
Drain current: 12A
Case: TO220FP
Gate-source voltage: ±30V
On-state resistance: 0.8Ω
Mounting: THT
Kind of package: tube
Kind of channel: enhancement
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 700V; 12A; TO220FP
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 700V
Drain current: 12A
Case: TO220FP
Gate-source voltage: ±30V
On-state resistance: 0.8Ω
Mounting: THT
Kind of package: tube
Kind of channel: enhancement
товару немає в наявності
В кошику
од. на суму грн.
| WML12N80M3 |
![]() |
Виробник: WAYON
Category: THT N channel transistors
Description: Transistor: N-MOSFET; WMOS™ M3; unipolar; 800V; 12A; 31W; TO220FP
Mounting: THT
Power dissipation: 31W
Polarisation: unipolar
Technology: WMOS™ M3
Drain current: 12A
Kind of channel: enhancement
Drain-source voltage: 800V
Type of transistor: N-MOSFET
Gate-source voltage: ±30V
Kind of package: tube
Case: TO220FP
On-state resistance: 620mΩ
Category: THT N channel transistors
Description: Transistor: N-MOSFET; WMOS™ M3; unipolar; 800V; 12A; 31W; TO220FP
Mounting: THT
Power dissipation: 31W
Polarisation: unipolar
Technology: WMOS™ M3
Drain current: 12A
Kind of channel: enhancement
Drain-source voltage: 800V
Type of transistor: N-MOSFET
Gate-source voltage: ±30V
Kind of package: tube
Case: TO220FP
On-state resistance: 620mΩ
на замовлення 406 шт:
термін постачання 14-30 дні (днів)
| Кількість | Ціна без ПДВ |
|---|---|
| 4+ | 118.71 грн |
| 5+ | 99.98 грн |
| 13+ | 79.47 грн |
| 34+ | 75.20 грн |
| WML13N50C4 |
Виробник: WAYON
Category: THT N channel transistors
Description: Transistor: N-MOSFET; WMOS™ C4; unipolar; 500V; 6A; Idm: 25A; 27W
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 500V
Drain current: 6A
Power dissipation: 27W
Case: TO220FP
Gate-source voltage: ±30V
On-state resistance: 0.48Ω
Mounting: THT
Gate charge: 9.6nC
Kind of channel: enhancement
Pulsed drain current: 25A
Technology: WMOS™ C4
Kind of package: tube
Category: THT N channel transistors
Description: Transistor: N-MOSFET; WMOS™ C4; unipolar; 500V; 6A; Idm: 25A; 27W
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 500V
Drain current: 6A
Power dissipation: 27W
Case: TO220FP
Gate-source voltage: ±30V
On-state resistance: 0.48Ω
Mounting: THT
Gate charge: 9.6nC
Kind of channel: enhancement
Pulsed drain current: 25A
Technology: WMOS™ C4
Kind of package: tube
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| WML13N50D1 |
Виробник: WAYON
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 500V; 13A; TO220FP
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 500V
Drain current: 13A
Case: TO220FP
Gate-source voltage: ±30V
On-state resistance: 0.48Ω
Mounting: THT
Kind of channel: enhancement
Kind of package: tube
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 500V; 13A; TO220FP
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 500V
Drain current: 13A
Case: TO220FP
Gate-source voltage: ±30V
On-state resistance: 0.48Ω
Mounting: THT
Kind of channel: enhancement
Kind of package: tube
на замовлення 536 шт:
термін постачання 14-30 дні (днів)
| Кількість | Ціна без ПДВ |
|---|---|
| 7+ | 66.26 грн |
| 10+ | 44.95 грн |
| 36+ | 27.43 грн |
| 97+ | 25.98 грн |
| 500+ | 25.12 грн |
| WML13N65EM |
Виробник: WAYON
Category: THT N channel transistors
Description: Transistor: N-MOSFET; WMOS™ EM; unipolar; 650V; 6.5A; Idm: 35A; 31W
Mounting: THT
Type of transistor: N-MOSFET
Gate-source voltage: ±30V
Kind of package: tube
Case: TO220FP
On-state resistance: 390mΩ
Pulsed drain current: 35A
Power dissipation: 31W
Gate charge: 20.3nC
Polarisation: unipolar
Technology: WMOS™ EM
Drain current: 6.5A
Kind of channel: enhancement
Drain-source voltage: 650V
Category: THT N channel transistors
Description: Transistor: N-MOSFET; WMOS™ EM; unipolar; 650V; 6.5A; Idm: 35A; 31W
Mounting: THT
Type of transistor: N-MOSFET
Gate-source voltage: ±30V
Kind of package: tube
Case: TO220FP
On-state resistance: 390mΩ
Pulsed drain current: 35A
Power dissipation: 31W
Gate charge: 20.3nC
Polarisation: unipolar
Technology: WMOS™ EM
Drain current: 6.5A
Kind of channel: enhancement
Drain-source voltage: 650V
товару немає в наявності
В кошику
од. на суму грн.
| WML13N80M3 |
![]() |
Виробник: WAYON
Category: THT N channel transistors
Description: Transistor: N-MOSFET; WMOS™ M3; unipolar; 800V; 13A; 33W; TO220FP
Type of transistor: N-MOSFET
Technology: WMOS™ M3
Polarisation: unipolar
Drain-source voltage: 800V
Drain current: 13A
Power dissipation: 33W
Case: TO220FP
Gate-source voltage: ±30V
On-state resistance: 0.48Ω
Mounting: THT
Kind of package: tube
Kind of channel: enhancement
Category: THT N channel transistors
Description: Transistor: N-MOSFET; WMOS™ M3; unipolar; 800V; 13A; 33W; TO220FP
Type of transistor: N-MOSFET
Technology: WMOS™ M3
Polarisation: unipolar
Drain-source voltage: 800V
Drain current: 13A
Power dissipation: 33W
Case: TO220FP
Gate-source voltage: ±30V
On-state resistance: 0.48Ω
Mounting: THT
Kind of package: tube
Kind of channel: enhancement
на замовлення 286 шт:
термін постачання 14-30 дні (днів)
| Кількість | Ціна без ПДВ |
|---|---|
| 4+ | 129.75 грн |
| 10+ | 108.52 грн |
| 12+ | 85.45 грн |
| 32+ | 81.18 грн |
| WML14N60C4 |
Виробник: WAYON
Category: THT N channel transistors
Description: Transistor: N-MOSFET; WMOS™ C4; unipolar; 600V; 6A; Idm: 26A; 31W
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 600V
Drain current: 6A
Power dissipation: 31W
Case: TO220FP
Gate-source voltage: ±30V
On-state resistance: 0.38Ω
Mounting: THT
Gate charge: 13nC
Kind of channel: enhancement
Pulsed drain current: 26A
Technology: WMOS™ C4
Kind of package: tube
Category: THT N channel transistors
Description: Transistor: N-MOSFET; WMOS™ C4; unipolar; 600V; 6A; Idm: 26A; 31W
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 600V
Drain current: 6A
Power dissipation: 31W
Case: TO220FP
Gate-source voltage: ±30V
On-state resistance: 0.38Ω
Mounting: THT
Gate charge: 13nC
Kind of channel: enhancement
Pulsed drain current: 26A
Technology: WMOS™ C4
Kind of package: tube
на замовлення 200 шт:
термін постачання 14-30 дні (днів)
| Кількість | Ціна без ПДВ |
|---|---|
| 4+ | 121.47 грн |
| 5+ | 99.98 грн |
| 10+ | 83.74 грн |
| 17+ | 59.81 грн |
| 45+ | 56.40 грн |
| WML14N65C4 |
![]() |
Виробник: WAYON
Category: THT N channel transistors
Description: Transistor: N-MOSFET; WMOS™ C4; unipolar; 650V; 6A; Idm: 26A; 31W
Type of transistor: N-MOSFET
Technology: WMOS™ C4
Polarisation: unipolar
Drain-source voltage: 650V
Drain current: 6A
Power dissipation: 31W
Case: TO220FP
Gate-source voltage: ±30V
On-state resistance: 0.38Ω
Mounting: THT
Kind of package: tube
Kind of channel: enhancement
Pulsed drain current: 26A
Gate charge: 13nC
Category: THT N channel transistors
Description: Transistor: N-MOSFET; WMOS™ C4; unipolar; 650V; 6A; Idm: 26A; 31W
Type of transistor: N-MOSFET
Technology: WMOS™ C4
Polarisation: unipolar
Drain-source voltage: 650V
Drain current: 6A
Power dissipation: 31W
Case: TO220FP
Gate-source voltage: ±30V
On-state resistance: 0.38Ω
Mounting: THT
Kind of package: tube
Kind of channel: enhancement
Pulsed drain current: 26A
Gate charge: 13nC
на замовлення 429 шт:
термін постачання 14-30 дні (днів)
| Кількість | Ціна без ПДВ |
|---|---|
| 6+ | 80.98 грн |
| 7+ | 67.51 грн |
| 18+ | 54.69 грн |
| 49+ | 52.12 грн |
| WML15N50D1B |
Виробник: WAYON
Category: THT N channel transistors
Description: Transistor: N-MOSFET; WMOS™ D1; unipolar; 500V; 15A; Idm: 60A; 45W
Drain-source voltage: 500V
Drain current: 15A
Case: TO220FP
Polarisation: unipolar
On-state resistance: 370mΩ
Pulsed drain current: 60A
Power dissipation: 45W
Technology: WMOS™ D1
Kind of channel: enhancement
Gate charge: 43nC
Gate-source voltage: ±30V
Type of transistor: N-MOSFET
Kind of package: tube
Mounting: THT
Category: THT N channel transistors
Description: Transistor: N-MOSFET; WMOS™ D1; unipolar; 500V; 15A; Idm: 60A; 45W
Drain-source voltage: 500V
Drain current: 15A
Case: TO220FP
Polarisation: unipolar
On-state resistance: 370mΩ
Pulsed drain current: 60A
Power dissipation: 45W
Technology: WMOS™ D1
Kind of channel: enhancement
Gate charge: 43nC
Gate-source voltage: ±30V
Type of transistor: N-MOSFET
Kind of package: tube
Mounting: THT
на замовлення 357 шт:
термін постачання 14-30 дні (днів)
| Кількість | Ціна без ПДВ |
|---|---|
| 8+ | 63.50 грн |
| 12+ | 36.83 грн |
| 44+ | 22.47 грн |
| 119+ | 21.28 грн |
| WML15N60C4 |
Виробник: WAYON
Category: THT N channel transistors
Description: Transistor: N-MOSFET; WMOS™ C4; unipolar; 600V; 7.8A; Idm: 26A; 31W
Mounting: THT
Kind of channel: enhancement
Drain-source voltage: 600V
Type of transistor: N-MOSFET
Gate-source voltage: ±30V
Kind of package: tube
Case: TO220FP
On-state resistance: 0.3Ω
Pulsed drain current: 26A
Power dissipation: 31W
Gate charge: 14.6nC
Polarisation: unipolar
Technology: WMOS™ C4
Drain current: 7.8A
Category: THT N channel transistors
Description: Transistor: N-MOSFET; WMOS™ C4; unipolar; 600V; 7.8A; Idm: 26A; 31W
Mounting: THT
Kind of channel: enhancement
Drain-source voltage: 600V
Type of transistor: N-MOSFET
Gate-source voltage: ±30V
Kind of package: tube
Case: TO220FP
On-state resistance: 0.3Ω
Pulsed drain current: 26A
Power dissipation: 31W
Gate charge: 14.6nC
Polarisation: unipolar
Technology: WMOS™ C4
Drain current: 7.8A
на замовлення 68 шт:
термін постачання 14-30 дні (днів)
| Кількість | Ціна без ПДВ |
|---|---|
| 5+ | 90.58 грн |
| 10+ | 76.65 грн |
| 18+ | 54.17 грн |
| 50+ | 51.27 грн |
| WML15N65C4 |
Виробник: WAYON
Category: THT N channel transistors
Description: Transistor: N-MOSFET; WMOS™ C4; unipolar; 650V; 7.8A; Idm: 26A; 31W
Type of transistor: N-MOSFET
Technology: WMOS™ C4
Power dissipation: 31W
Case: TO220FP
Mounting: THT
Gate charge: 14.6nC
Kind of package: tube
Drain current: 7.8A
Kind of channel: enhancement
Drain-source voltage: 650V
Gate-source voltage: ±30V
On-state resistance: 0.3Ω
Pulsed drain current: 26A
Polarisation: unipolar
Category: THT N channel transistors
Description: Transistor: N-MOSFET; WMOS™ C4; unipolar; 650V; 7.8A; Idm: 26A; 31W
Type of transistor: N-MOSFET
Technology: WMOS™ C4
Power dissipation: 31W
Case: TO220FP
Mounting: THT
Gate charge: 14.6nC
Kind of package: tube
Drain current: 7.8A
Kind of channel: enhancement
Drain-source voltage: 650V
Gate-source voltage: ±30V
On-state resistance: 0.3Ω
Pulsed drain current: 26A
Polarisation: unipolar
товару немає в наявності
Мінімальне замовлення: 500 шт
В кошику
од. на суму грн.
| WML15N80M3 |
![]() |
Виробник: WAYON
Category: THT N channel transistors
Description: Transistor: N-MOSFET; WMOS™ M3; unipolar; 800V; 15A; 35W; TO220FP
Type of transistor: N-MOSFET
Technology: WMOS™ M3
Polarisation: unipolar
Drain-source voltage: 800V
Drain current: 15A
Power dissipation: 35W
Case: TO220FP
Gate-source voltage: ±30V
On-state resistance: 0.36Ω
Mounting: THT
Kind of package: tube
Kind of channel: enhancement
Category: THT N channel transistors
Description: Transistor: N-MOSFET; WMOS™ M3; unipolar; 800V; 15A; 35W; TO220FP
Type of transistor: N-MOSFET
Technology: WMOS™ M3
Polarisation: unipolar
Drain-source voltage: 800V
Drain current: 15A
Power dissipation: 35W
Case: TO220FP
Gate-source voltage: ±30V
On-state resistance: 0.36Ω
Mounting: THT
Kind of package: tube
Kind of channel: enhancement
на замовлення 12 шт:
термін постачання 14-30 дні (днів)
| Кількість | Ціна без ПДВ |
|---|---|
| 4+ | 138.95 грн |
| 5+ | 112.79 грн |
| WML16N60FD |
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Виробник: WAYON
Category: THT N channel transistors
Description: Transistor: N-MOSFET; WMOS™ FD; unipolar; 600V; 13A; 31W; TO220FP
Type of transistor: N-MOSFET
Power dissipation: 31W
Case: TO220FP
Mounting: THT
Kind of package: tube
Drain current: 13A
Kind of channel: enhancement
Drain-source voltage: 600V
Gate-source voltage: ±30V
On-state resistance: 0.32Ω
Polarisation: unipolar
Technology: WMOS™ FD
Category: THT N channel transistors
Description: Transistor: N-MOSFET; WMOS™ FD; unipolar; 600V; 13A; 31W; TO220FP
Type of transistor: N-MOSFET
Power dissipation: 31W
Case: TO220FP
Mounting: THT
Kind of package: tube
Drain current: 13A
Kind of channel: enhancement
Drain-source voltage: 600V
Gate-source voltage: ±30V
On-state resistance: 0.32Ω
Polarisation: unipolar
Technology: WMOS™ FD
товару немає в наявності
В кошику
од. на суму грн.
| WML16N65C2 |
![]() |
Виробник: WAYON
Category: THT N channel transistors
Description: Transistor: N-MOSFET; WMOS™ C2; unipolar; 650V; 13A; 31W; TO220FP
Type of transistor: N-MOSFET
Technology: WMOS™ C2
Polarisation: unipolar
Drain-source voltage: 650V
Drain current: 13A
Power dissipation: 31W
Case: TO220FP
Gate-source voltage: ±30V
On-state resistance: 0.32Ω
Mounting: THT
Kind of package: tube
Kind of channel: enhancement
Category: THT N channel transistors
Description: Transistor: N-MOSFET; WMOS™ C2; unipolar; 650V; 13A; 31W; TO220FP
Type of transistor: N-MOSFET
Technology: WMOS™ C2
Polarisation: unipolar
Drain-source voltage: 650V
Drain current: 13A
Power dissipation: 31W
Case: TO220FP
Gate-source voltage: ±30V
On-state resistance: 0.32Ω
Mounting: THT
Kind of package: tube
Kind of channel: enhancement
товару немає в наявності
В кошику
од. на суму грн.
| WML16N65FD |
![]() |
Виробник: WAYON
Category: THT N channel transistors
Description: Transistor: N-MOSFET; WMOS™ FD; unipolar; 650V; 13A; 31W; TO220FP
Type of transistor: N-MOSFET
Technology: WMOS™ FD
Polarisation: unipolar
Drain-source voltage: 650V
Drain current: 13A
Power dissipation: 31W
Case: TO220FP
Gate-source voltage: ±30V
On-state resistance: 0.32Ω
Mounting: THT
Kind of package: tube
Kind of channel: enhancement
Category: THT N channel transistors
Description: Transistor: N-MOSFET; WMOS™ FD; unipolar; 650V; 13A; 31W; TO220FP
Type of transistor: N-MOSFET
Technology: WMOS™ FD
Polarisation: unipolar
Drain-source voltage: 650V
Drain current: 13A
Power dissipation: 31W
Case: TO220FP
Gate-source voltage: ±30V
On-state resistance: 0.32Ω
Mounting: THT
Kind of package: tube
Kind of channel: enhancement
товару немає в наявності
В кошику
од. на суму грн.
| WML16N65SR |
Виробник: WAYON
Category: THT N channel transistors
Description: Transistor: N-MOSFET; WMOS™ SR; unipolar; 650V; 8.4A; Idm: 35A; 31W
Type of transistor: N-MOSFET
Technology: WMOS™ SR
Polarisation: unipolar
Drain-source voltage: 650V
Drain current: 8.4A
Power dissipation: 31W
Case: TO220FP
Gate-source voltage: ±30V
On-state resistance: 0.35Ω
Mounting: THT
Kind of package: tube
Kind of channel: enhancement
Pulsed drain current: 35A
Gate charge: 19.5nC
Category: THT N channel transistors
Description: Transistor: N-MOSFET; WMOS™ SR; unipolar; 650V; 8.4A; Idm: 35A; 31W
Type of transistor: N-MOSFET
Technology: WMOS™ SR
Polarisation: unipolar
Drain-source voltage: 650V
Drain current: 8.4A
Power dissipation: 31W
Case: TO220FP
Gate-source voltage: ±30V
On-state resistance: 0.35Ω
Mounting: THT
Kind of package: tube
Kind of channel: enhancement
Pulsed drain current: 35A
Gate charge: 19.5nC
товару немає в наявності
В кошику
од. на суму грн.
| WML17N25JN |
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Виробник: WAYON
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 250V; 6.5A; Idm: 33A; 20W; TO220FP
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 250V
Drain current: 6.5A
Pulsed drain current: 33A
Power dissipation: 20W
Case: TO220FP
Gate-source voltage: ±20V
On-state resistance: 0.17Ω
Mounting: THT
Gate charge: 7.1nC
Kind of package: tube
Kind of channel: enhancement
Reverse recovery time: 98ns
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 250V; 6.5A; Idm: 33A; 20W; TO220FP
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 250V
Drain current: 6.5A
Pulsed drain current: 33A
Power dissipation: 20W
Case: TO220FP
Gate-source voltage: ±20V
On-state resistance: 0.17Ω
Mounting: THT
Gate charge: 7.1nC
Kind of package: tube
Kind of channel: enhancement
Reverse recovery time: 98ns
товару немає в наявності
В кошику
од. на суму грн.
| WML18N06TS |
Виробник: WAYON
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 60V; 18A; Idm: 72A; 20.2W; TO220FP
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 60V
Drain current: 18A
Power dissipation: 20.2W
Case: TO220FP
Gate-source voltage: ±20V
On-state resistance: 35mΩ
Mounting: THT
Kind of channel: enhancement
Pulsed drain current: 72A
Gate charge: 22nC
Kind of package: tube
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 60V; 18A; Idm: 72A; 20.2W; TO220FP
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 60V
Drain current: 18A
Power dissipation: 20.2W
Case: TO220FP
Gate-source voltage: ±20V
On-state resistance: 35mΩ
Mounting: THT
Kind of channel: enhancement
Pulsed drain current: 72A
Gate charge: 22nC
Kind of package: tube
на замовлення 358 шт:
термін постачання 14-30 дні (днів)
| Кількість | Ціна без ПДВ |
|---|---|
| 11+ | 45.09 грн |
| 19+ | 23.33 грн |
| 50+ | 19.57 грн |
| 55+ | 17.86 грн |
| 150+ | 16.83 грн |
| WML18N20JN |
![]() |
Виробник: WAYON
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 200V; 7A; Idm: 39A; 36W; TO220FP
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 200V
Drain current: 7A
Power dissipation: 36W
Case: TO220FP
Gate-source voltage: ±20V
On-state resistance: 135mΩ
Mounting: THT
Gate charge: 7.2nC
Kind of package: tube
Kind of channel: enhancement
Reverse recovery time: 80ns
Pulsed drain current: 39A
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 200V; 7A; Idm: 39A; 36W; TO220FP
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 200V
Drain current: 7A
Power dissipation: 36W
Case: TO220FP
Gate-source voltage: ±20V
On-state resistance: 135mΩ
Mounting: THT
Gate charge: 7.2nC
Kind of package: tube
Kind of channel: enhancement
Reverse recovery time: 80ns
Pulsed drain current: 39A
товару немає в наявності
В кошику
од. на суму грн.
| WML18N50C4 |
Виробник: WAYON
Category: THT N channel transistors
Description: Transistor: N-MOSFET; WMOS™ C4; unipolar; 500V; 10A; Idm: 50A; 31W
Type of transistor: N-MOSFET
Technology: WMOS™ C4
Polarisation: unipolar
Drain-source voltage: 500V
Drain current: 10A
Power dissipation: 31W
Case: TO220FP
Gate-source voltage: ±30V
On-state resistance: 0.3Ω
Mounting: THT
Gate charge: 13nC
Kind of package: tube
Kind of channel: enhancement
Pulsed drain current: 50A
Category: THT N channel transistors
Description: Transistor: N-MOSFET; WMOS™ C4; unipolar; 500V; 10A; Idm: 50A; 31W
Type of transistor: N-MOSFET
Technology: WMOS™ C4
Polarisation: unipolar
Drain-source voltage: 500V
Drain current: 10A
Power dissipation: 31W
Case: TO220FP
Gate-source voltage: ±30V
On-state resistance: 0.3Ω
Mounting: THT
Gate charge: 13nC
Kind of package: tube
Kind of channel: enhancement
Pulsed drain current: 50A
товару немає в наявності
В кошику
од. на суму грн.
| WML18N50D1B |
Виробник: WAYON
Category: THT N channel transistors
Description: Transistor: N-MOSFET; WMOS™ D1; unipolar; 500V; 18A; Idm: 72A; 44.6W
Type of transistor: N-MOSFET
Technology: WMOS™ D1
Polarisation: unipolar
Drain-source voltage: 500V
Drain current: 18A
Power dissipation: 44.6W
Case: TO220FP
Gate-source voltage: ±30V
On-state resistance: 0.28Ω
Mounting: THT
Gate charge: 40nC
Kind of package: tube
Kind of channel: enhancement
Pulsed drain current: 72A
Category: THT N channel transistors
Description: Transistor: N-MOSFET; WMOS™ D1; unipolar; 500V; 18A; Idm: 72A; 44.6W
Type of transistor: N-MOSFET
Technology: WMOS™ D1
Polarisation: unipolar
Drain-source voltage: 500V
Drain current: 18A
Power dissipation: 44.6W
Case: TO220FP
Gate-source voltage: ±30V
On-state resistance: 0.28Ω
Mounting: THT
Gate charge: 40nC
Kind of package: tube
Kind of channel: enhancement
Pulsed drain current: 72A
товару немає в наявності
В кошику
од. на суму грн.
| WML18N65EM |
Виробник: WAYON
Category: THT N channel transistors
Description: Transistor: N-MOSFET; WMOS™ EM; unipolar; 650V; 8.6A; Idm: 43A; 34W
Type of transistor: N-MOSFET
Technology: WMOS™ EM
Polarisation: unipolar
Drain-source voltage: 650V
Drain current: 8.6A
Pulsed drain current: 43A
Power dissipation: 34W
Case: TO220FP
Gate-source voltage: ±30V
On-state resistance: 0.28Ω
Mounting: THT
Gate charge: 26nC
Kind of package: tube
Kind of channel: enhancement
Category: THT N channel transistors
Description: Transistor: N-MOSFET; WMOS™ EM; unipolar; 650V; 8.6A; Idm: 43A; 34W
Type of transistor: N-MOSFET
Technology: WMOS™ EM
Polarisation: unipolar
Drain-source voltage: 650V
Drain current: 8.6A
Pulsed drain current: 43A
Power dissipation: 34W
Case: TO220FP
Gate-source voltage: ±30V
On-state resistance: 0.28Ω
Mounting: THT
Gate charge: 26nC
Kind of package: tube
Kind of channel: enhancement
товару немає в наявності
В кошику
од. на суму грн.
| WML20N50D1 |
Виробник: WAYON
Category: THT N channel transistors
Description: Transistor: N-MOSFET; WMOS™ D1; unipolar; 500V; 20A; Idm: 80A; 45W
Type of transistor: N-MOSFET
Technology: WMOS™ D1
Polarisation: unipolar
Drain-source voltage: 500V
Drain current: 20A
Power dissipation: 45W
Case: TO220FP
Gate-source voltage: ±30V
On-state resistance: 0.22Ω
Mounting: THT
Gate charge: 52.5nC
Kind of package: tube
Kind of channel: enhancement
Pulsed drain current: 80A
Category: THT N channel transistors
Description: Transistor: N-MOSFET; WMOS™ D1; unipolar; 500V; 20A; Idm: 80A; 45W
Type of transistor: N-MOSFET
Technology: WMOS™ D1
Polarisation: unipolar
Drain-source voltage: 500V
Drain current: 20A
Power dissipation: 45W
Case: TO220FP
Gate-source voltage: ±30V
On-state resistance: 0.22Ω
Mounting: THT
Gate charge: 52.5nC
Kind of package: tube
Kind of channel: enhancement
Pulsed drain current: 80A
товару немає в наявності
В кошику
од. на суму грн.
| WML20N65EM |
Виробник: WAYON
Category: THT N channel transistors
Description: Transistor: N-MOSFET; WMOS™ EM; unipolar; 650V; 17A; 34W; TO220FP
Type of transistor: N-MOSFET
Technology: WMOS™ EM
Power dissipation: 34W
Case: TO220FP
Mounting: THT
Kind of package: tube
Drain current: 17A
Kind of channel: enhancement
Drain-source voltage: 650V
Gate-source voltage: ±30V
On-state resistance: 0.24Ω
Polarisation: unipolar
Category: THT N channel transistors
Description: Transistor: N-MOSFET; WMOS™ EM; unipolar; 650V; 17A; 34W; TO220FP
Type of transistor: N-MOSFET
Technology: WMOS™ EM
Power dissipation: 34W
Case: TO220FP
Mounting: THT
Kind of package: tube
Drain current: 17A
Kind of channel: enhancement
Drain-source voltage: 650V
Gate-source voltage: ±30V
On-state resistance: 0.24Ω
Polarisation: unipolar
товару немає в наявності
В кошику
од. на суму грн.
| WML20N70D1 |
Виробник: WAYON
Category: THT N channel transistors
Description: Transistor: N-MOSFET; WMOS™ D1; unipolar; 700V; 20A; Idm: 80A; 45W
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 700V
Drain current: 20A
Pulsed drain current: 80A
Power dissipation: 45W
Case: TO220FP
Gate-source voltage: ±30V
On-state resistance: 0.42Ω
Mounting: THT
Gate charge: 66nC
Kind of package: tube
Kind of channel: enhancement
Technology: WMOS™ D1
Category: THT N channel transistors
Description: Transistor: N-MOSFET; WMOS™ D1; unipolar; 700V; 20A; Idm: 80A; 45W
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 700V
Drain current: 20A
Pulsed drain current: 80A
Power dissipation: 45W
Case: TO220FP
Gate-source voltage: ±30V
On-state resistance: 0.42Ω
Mounting: THT
Gate charge: 66nC
Kind of package: tube
Kind of channel: enhancement
Technology: WMOS™ D1
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| WML22N50C4 |
Виробник: WAYON
Category: THT N channel transistors
Description: Transistor: N-MOSFET; WMOS™ C4; unipolar; 500V; 11A; Idm: 60A; 31W
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 500V
Drain current: 11A
Power dissipation: 31W
Case: TO220FP
Gate-source voltage: ±30V
On-state resistance: 0.27Ω
Mounting: THT
Gate charge: 14.6nC
Kind of package: tube
Kind of channel: enhancement
Pulsed drain current: 60A
Technology: WMOS™ C4
Category: THT N channel transistors
Description: Transistor: N-MOSFET; WMOS™ C4; unipolar; 500V; 11A; Idm: 60A; 31W
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 500V
Drain current: 11A
Power dissipation: 31W
Case: TO220FP
Gate-source voltage: ±30V
On-state resistance: 0.27Ω
Mounting: THT
Gate charge: 14.6nC
Kind of package: tube
Kind of channel: enhancement
Pulsed drain current: 60A
Technology: WMOS™ C4
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| WML25N50C4 |
Виробник: WAYON
Category: THT N channel transistors
Description: Transistor: N-MOSFET; WMOS™ C4; unipolar; 500V; 13A; Idm: 65A; 31W
Polarisation: unipolar
Technology: WMOS™ C4
Drain current: 13A
Kind of channel: enhancement
Drain-source voltage: 500V
Type of transistor: N-MOSFET
Gate-source voltage: ±30V
Kind of package: tube
Case: TO220FP
On-state resistance: 0.16Ω
Mounting: THT
Pulsed drain current: 65A
Power dissipation: 31W
Gate charge: 22.1nC
Category: THT N channel transistors
Description: Transistor: N-MOSFET; WMOS™ C4; unipolar; 500V; 13A; Idm: 65A; 31W
Polarisation: unipolar
Technology: WMOS™ C4
Drain current: 13A
Kind of channel: enhancement
Drain-source voltage: 500V
Type of transistor: N-MOSFET
Gate-source voltage: ±30V
Kind of package: tube
Case: TO220FP
On-state resistance: 0.16Ω
Mounting: THT
Pulsed drain current: 65A
Power dissipation: 31W
Gate charge: 22.1nC
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| WML25N50D1B |
Виробник: WAYON
Category: THT N channel transistors
Description: Transistor: N-MOSFET; WMOS™ D1; unipolar; 500V; 25A; TO220FP
Polarisation: unipolar
Technology: WMOS™ D1
Drain current: 25A
Kind of channel: enhancement
Drain-source voltage: 500V
Type of transistor: N-MOSFET
Gate-source voltage: ±30V
Kind of package: tube
Case: TO220FP
On-state resistance: 0.27Ω
Mounting: THT
Category: THT N channel transistors
Description: Transistor: N-MOSFET; WMOS™ D1; unipolar; 500V; 25A; TO220FP
Polarisation: unipolar
Technology: WMOS™ D1
Drain current: 25A
Kind of channel: enhancement
Drain-source voltage: 500V
Type of transistor: N-MOSFET
Gate-source voltage: ±30V
Kind of package: tube
Case: TO220FP
On-state resistance: 0.27Ω
Mounting: THT
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| WML25N65EM |
Виробник: WAYON
Category: THT N channel transistors
Description: Transistor: N-MOSFET; WMOS™ EM; unipolar; 650V; 13A; Idm: 80A; 34W
Type of transistor: N-MOSFET
Power dissipation: 34W
Case: TO220FP
Mounting: THT
Gate charge: 36nC
Kind of package: tube
Pulsed drain current: 80A
Polarisation: unipolar
Technology: WMOS™ EM
Drain current: 13A
Kind of channel: enhancement
Drain-source voltage: 650V
Gate-source voltage: ±30V
On-state resistance: 0.19Ω
Category: THT N channel transistors
Description: Transistor: N-MOSFET; WMOS™ EM; unipolar; 650V; 13A; Idm: 80A; 34W
Type of transistor: N-MOSFET
Power dissipation: 34W
Case: TO220FP
Mounting: THT
Gate charge: 36nC
Kind of package: tube
Pulsed drain current: 80A
Polarisation: unipolar
Technology: WMOS™ EM
Drain current: 13A
Kind of channel: enhancement
Drain-source voltage: 650V
Gate-source voltage: ±30V
On-state resistance: 0.19Ω
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| WML26N60C4 |
Виробник: WAYON
Category: THT N channel transistors
Description: Transistor: N-MOSFET; WMOS™ C4; unipolar; 600V; 10.5A; Idm: 40A; 31W
Type of transistor: N-MOSFET
Technology: WMOS™ C4
Polarisation: unipolar
Drain-source voltage: 600V
Drain current: 10.5A
Power dissipation: 31W
Case: TO220FP
Gate-source voltage: ±30V
On-state resistance: 0.19Ω
Mounting: THT
Gate charge: 22.1nC
Kind of package: tube
Kind of channel: enhancement
Pulsed drain current: 40A
Category: THT N channel transistors
Description: Transistor: N-MOSFET; WMOS™ C4; unipolar; 600V; 10.5A; Idm: 40A; 31W
Type of transistor: N-MOSFET
Technology: WMOS™ C4
Polarisation: unipolar
Drain-source voltage: 600V
Drain current: 10.5A
Power dissipation: 31W
Case: TO220FP
Gate-source voltage: ±30V
On-state resistance: 0.19Ω
Mounting: THT
Gate charge: 22.1nC
Kind of package: tube
Kind of channel: enhancement
Pulsed drain current: 40A
на замовлення 391 шт:
термін постачання 14-30 дні (днів)
| Кількість | Ціна без ПДВ |
|---|---|
| 3+ | 154.66 грн |
| 10+ | 130.74 грн |
| 11+ | 92.29 грн |
| 29+ | 87.16 грн |
| WML26N60F2 |
Виробник: WAYON
Category: THT N channel transistors
Description: Transistor: N-MOSFET; WMOS™ F2; unipolar; 600V; 10.5A; Idm: 40A; 31W
Type of transistor: N-MOSFET
Technology: WMOS™ F2
Polarisation: unipolar
Drain-source voltage: 600V
Drain current: 10.5A
Power dissipation: 31W
Case: TO220FP
Gate-source voltage: ±30V
On-state resistance: 0.21Ω
Mounting: THT
Gate charge: 22.1nC
Kind of package: tube
Kind of channel: enhancement
Pulsed drain current: 40A
Category: THT N channel transistors
Description: Transistor: N-MOSFET; WMOS™ F2; unipolar; 600V; 10.5A; Idm: 40A; 31W
Type of transistor: N-MOSFET
Technology: WMOS™ F2
Polarisation: unipolar
Drain-source voltage: 600V
Drain current: 10.5A
Power dissipation: 31W
Case: TO220FP
Gate-source voltage: ±30V
On-state resistance: 0.21Ω
Mounting: THT
Gate charge: 22.1nC
Kind of package: tube
Kind of channel: enhancement
Pulsed drain current: 40A
на замовлення 85 шт:
термін постачання 14-30 дні (днів)
| Кількість | Ціна без ПДВ |
|---|---|
| 3+ | 142.70 грн |
| 10+ | 119.63 грн |
| 12+ | 84.59 грн |
| 32+ | 80.32 грн |
| WML26N60FD |
![]() |
Виробник: WAYON
Category: THT N channel transistors
Description: Transistor: N-MOSFET; WMOS™ FD; unipolar; 600V; 20A; 34W; TO220FP
Type of transistor: N-MOSFET
Technology: WMOS™ FD
Polarisation: unipolar
Drain-source voltage: 600V
Drain current: 20A
Power dissipation: 34W
Case: TO220FP
Gate-source voltage: ±30V
On-state resistance: 0.2Ω
Mounting: THT
Kind of package: tube
Kind of channel: enhancement
Category: THT N channel transistors
Description: Transistor: N-MOSFET; WMOS™ FD; unipolar; 600V; 20A; 34W; TO220FP
Type of transistor: N-MOSFET
Technology: WMOS™ FD
Polarisation: unipolar
Drain-source voltage: 600V
Drain current: 20A
Power dissipation: 34W
Case: TO220FP
Gate-source voltage: ±30V
On-state resistance: 0.2Ω
Mounting: THT
Kind of package: tube
Kind of channel: enhancement
товару немає в наявності
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| WML26N65C4 |
![]() |
Виробник: WAYON
Category: THT N channel transistors
Description: Transistor: N-MOSFET; WMOS™ C4; unipolar; 650V; 10.5A; Idm: 40A
Type of transistor: N-MOSFET
Technology: WMOS™ C4
Polarisation: unipolar
Drain-source voltage: 650V
Drain current: 10.5A
Pulsed drain current: 40A
Power dissipation: 135W
Case: TO220FP
Gate-source voltage: ±30V
On-state resistance: 0.19Ω
Mounting: THT
Kind of package: tube
Kind of channel: enhancement
Heatsink thickness: 1.2...1.45mm
Category: THT N channel transistors
Description: Transistor: N-MOSFET; WMOS™ C4; unipolar; 650V; 10.5A; Idm: 40A
Type of transistor: N-MOSFET
Technology: WMOS™ C4
Polarisation: unipolar
Drain-source voltage: 650V
Drain current: 10.5A
Pulsed drain current: 40A
Power dissipation: 135W
Case: TO220FP
Gate-source voltage: ±30V
On-state resistance: 0.19Ω
Mounting: THT
Kind of package: tube
Kind of channel: enhancement
Heatsink thickness: 1.2...1.45mm
на замовлення 178 шт:
термін постачання 14-30 дні (днів)
| Кількість | Ціна без ПДВ |
|---|---|
| 4+ | 127.91 грн |
| 5+ | 106.81 грн |
| 25+ | 93.99 грн |
| 100+ | 85.45 грн |




















