| Фото | Назва | Виробник | Інформація |
Доступність |
Ціна |
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WMM10N65C2 | WAYON |
Category: SMD N channel transistorsDescription: Transistor: N-MOSFET; WMOS™ C2; unipolar; 650V; 8A; 57W; TO263 Type of transistor: N-MOSFET Technology: WMOS™ C2 Polarisation: unipolar Drain-source voltage: 650V Drain current: 8A Power dissipation: 57W Case: TO263 Gate-source voltage: ±30V On-state resistance: 690mΩ Mounting: SMD Kind of package: reel; tape Kind of channel: enhancement |
на замовлення 574 шт: термін постачання 21-30 дні (днів) |
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WMM10N65C2 | WAYON |
Category: SMD N channel transistorsDescription: Transistor: N-MOSFET; WMOS™ C2; unipolar; 650V; 8A; 57W; TO263 Type of transistor: N-MOSFET Technology: WMOS™ C2 Polarisation: unipolar Drain-source voltage: 650V Drain current: 8A Power dissipation: 57W Case: TO263 Gate-source voltage: ±30V On-state resistance: 690mΩ Mounting: SMD Kind of package: reel; tape Kind of channel: enhancement кількість в упаковці: 1 шт |
на замовлення 574 шт: термін постачання 7-14 дні (днів) |
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WMM10N70C2 | WAYON |
Category: SMD N channel transistorsDescription: Transistor: N-MOSFET; WMOS™ C2; unipolar; 700V; 7.5A; 57W; TO263 Type of transistor: N-MOSFET Technology: WMOS™ C2 Polarisation: unipolar Drain-source voltage: 700V Drain current: 7.5A Power dissipation: 57W Case: TO263 Gate-source voltage: ±30V On-state resistance: 920mΩ Mounting: SMD Kind of package: reel; tape Kind of channel: enhancement |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||||||||
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WMM10N80M3 | WAYON |
Category: SMD N channel transistorsDescription: Transistor: N-MOSFET; WMOS™ M3; unipolar; 800V; 10A; 85W; TO263 Type of transistor: N-MOSFET Technology: WMOS™ M3 Polarisation: unipolar Drain-source voltage: 800V Drain current: 10A Power dissipation: 85W Case: TO263 Gate-source voltage: ±30V On-state resistance: 1.03Ω Mounting: SMD Kind of package: reel; tape Kind of channel: enhancement |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||||||||
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WMM115N15HG4 | WAYON |
Category: SMD N channel transistors Description: Transistor: N-MOSFET; unipolar; 150V; 88A; Idm: 352A; 178.6W; TO263 Type of transistor: N-MOSFET Polarisation: unipolar Drain-source voltage: 150V Drain current: 88A Pulsed drain current: 352A Power dissipation: 178.6W Case: TO263 Gate-source voltage: ±20V On-state resistance: 11.5mΩ Mounting: SMD Gate charge: 45nC Kind of package: reel; tape Kind of channel: enhancement |
на замовлення 95 шт: термін постачання 21-30 дні (днів) |
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WMM115N15HG4 | WAYON |
Category: SMD N channel transistors Description: Transistor: N-MOSFET; unipolar; 150V; 88A; Idm: 352A; 178.6W; TO263 Type of transistor: N-MOSFET Polarisation: unipolar Drain-source voltage: 150V Drain current: 88A Pulsed drain current: 352A Power dissipation: 178.6W Case: TO263 Gate-source voltage: ±20V On-state resistance: 11.5mΩ Mounting: SMD Gate charge: 45nC Kind of package: reel; tape Kind of channel: enhancement кількість в упаковці: 1 шт |
на замовлення 95 шт: термін постачання 7-14 дні (днів) |
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WMM11N60C2 | WAYON |
Category: SMD N channel transistorsDescription: Transistor: N-MOSFET; WMOS™ C2; unipolar; 600V; 9A; 63W; TO263 Type of transistor: N-MOSFET Technology: WMOS™ C2 Polarisation: unipolar Drain-source voltage: 600V Drain current: 9A Power dissipation: 63W Case: TO263 Gate-source voltage: ±30V On-state resistance: 0.54Ω Mounting: SMD Kind of package: reel; tape Kind of channel: enhancement |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||||||||
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WMM11N65C2 | WAYON |
Category: SMD N channel transistors Description: Transistor: N-MOSFET; WMOS™ C2; unipolar; 650V; 9A; 63W; TO263 Type of transistor: N-MOSFET Technology: WMOS™ C2 Polarisation: unipolar Drain-source voltage: 650V Drain current: 9A Power dissipation: 63W Case: TO263 Gate-source voltage: ±30V On-state resistance: 0.54Ω Mounting: SMD Kind of package: reel; tape Kind of channel: enhancement |
на замовлення 557 шт: термін постачання 21-30 дні (днів) |
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WMM11N65C2 | WAYON |
Category: SMD N channel transistors Description: Transistor: N-MOSFET; WMOS™ C2; unipolar; 650V; 9A; 63W; TO263 Type of transistor: N-MOSFET Technology: WMOS™ C2 Polarisation: unipolar Drain-source voltage: 650V Drain current: 9A Power dissipation: 63W Case: TO263 Gate-source voltage: ±30V On-state resistance: 0.54Ω Mounting: SMD Kind of package: reel; tape Kind of channel: enhancement кількість в упаковці: 1 шт |
на замовлення 557 шт: термін постачання 7-14 дні (днів) |
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| WMM120N04TS | WAYON | WMM120N04TS-CYG SMD N channel transistors |
на замовлення 81 шт: термін постачання 7-14 дні (днів) |
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| WMM120P06TS | WAYON | WMM120P06TS-CYG SMD P channel transistors |
на замовлення 361 шт: термін постачання 7-14 дні (днів) |
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WMM12N80M3 | WAYON |
Category: SMD N channel transistorsDescription: Transistor: N-MOSFET; WMOS™ M3; unipolar; 800V; 12A; 86W; TO263 Case: TO263 Mounting: SMD Kind of package: reel; tape On-state resistance: 620mΩ Drain current: 12A Power dissipation: 86W Gate-source voltage: ±30V Drain-source voltage: 800V Kind of channel: enhancement Technology: WMOS™ M3 Type of transistor: N-MOSFET Polarisation: unipolar |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||||||||
| WMM130N20JN | WAYON |
Category: SMD N channel transistorsDescription: Transistor: N-MOSFET; unipolar; 200V; 117A; Idm: 620A; 416W; TO263 Type of transistor: N-MOSFET Polarisation: unipolar Drain-source voltage: 200V Drain current: 117A Pulsed drain current: 620A Power dissipation: 416W Case: TO263 Gate-source voltage: ±20V On-state resistance: 5.2mΩ Mounting: SMD Gate charge: 188nC Kind of package: reel; tape Kind of channel: enhancement Reverse recovery time: 196ns |
товару немає в наявності |
В кошику од. на суму грн. | |||||||||||||||
| WMM13N80M3 | WAYON | WMM13N80M3-CYG SMD N channel transistors |
на замовлення 575 шт: термін постачання 7-14 дні (днів) |
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WMM14N60C2 | WAYON |
Category: SMD N channel transistorsDescription: Transistor: N-MOSFET; WMOS™ C2; unipolar; 600V; 11A; 85W; TO263 Type of transistor: N-MOSFET Technology: WMOS™ C2 Polarisation: unipolar Drain-source voltage: 600V Drain current: 11A Power dissipation: 85W Case: TO263 Gate-source voltage: ±30V On-state resistance: 405mΩ Mounting: SMD Kind of package: reel; tape Kind of channel: enhancement |
на замовлення 11 шт: термін постачання 21-30 дні (днів) |
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WMM14N60C2 | WAYON |
Category: SMD N channel transistorsDescription: Transistor: N-MOSFET; WMOS™ C2; unipolar; 600V; 11A; 85W; TO263 Type of transistor: N-MOSFET Technology: WMOS™ C2 Polarisation: unipolar Drain-source voltage: 600V Drain current: 11A Power dissipation: 85W Case: TO263 Gate-source voltage: ±30V On-state resistance: 405mΩ Mounting: SMD Kind of package: reel; tape Kind of channel: enhancement кількість в упаковці: 1 шт |
на замовлення 11 шт: термін постачання 7-14 дні (днів) |
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| WMM14N65C4 | WAYON |
Category: SMD N channel transistorsDescription: Transistor: N-MOSFET; WMOS™ C4; unipolar; 650V; 6A; Idm: 26A; 85W Type of transistor: N-MOSFET Polarisation: unipolar Drain-source voltage: 650V Drain current: 6A Pulsed drain current: 26A Power dissipation: 85W Case: TO263 Gate-source voltage: ±30V On-state resistance: 0.38Ω Mounting: SMD Gate charge: 13nC Kind of package: reel; tape Kind of channel: enhancement Technology: WMOS™ C4 |
товару немає в наявності |
В кошику од. на суму грн. | |||||||||||||||
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WMM14N70C2 | WAYON |
Category: SMD N channel transistors Description: Transistor: N-MOSFET; WMOS™ C2; unipolar; 700V; 11A; 85W; TO263 Type of transistor: N-MOSFET Technology: WMOS™ C2 Polarisation: unipolar Drain-source voltage: 700V Drain current: 11A Power dissipation: 85W Case: TO263 Gate-source voltage: ±30V On-state resistance: 530mΩ Mounting: SMD Kind of package: reel; tape Kind of channel: enhancement |
на замовлення 233 шт: термін постачання 21-30 дні (днів) |
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WMM14N70C2 | WAYON |
Category: SMD N channel transistors Description: Transistor: N-MOSFET; WMOS™ C2; unipolar; 700V; 11A; 85W; TO263 Type of transistor: N-MOSFET Technology: WMOS™ C2 Polarisation: unipolar Drain-source voltage: 700V Drain current: 11A Power dissipation: 85W Case: TO263 Gate-source voltage: ±30V On-state resistance: 530mΩ Mounting: SMD Kind of package: reel; tape Kind of channel: enhancement кількість в упаковці: 1 шт |
на замовлення 233 шт: термін постачання 7-14 дні (днів) |
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WMM15N60C4 | WAYON |
Category: SMD N channel transistors Description: Transistor: N-MOSFET; WMOS™ C4; unipolar; 600V; 7.8A; Idm: 26A; 86W Type of transistor: N-MOSFET Technology: WMOS™ C4 Polarisation: unipolar Drain-source voltage: 600V Drain current: 7.8A Pulsed drain current: 26A Power dissipation: 86W Case: TO263 Gate-source voltage: ±30V On-state resistance: 0.3Ω Mounting: SMD Gate charge: 14.6nC Kind of package: reel; tape Kind of channel: enhancement |
на замовлення 490 шт: термін постачання 21-30 дні (днів) |
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WMM15N60C4 | WAYON |
Category: SMD N channel transistors Description: Transistor: N-MOSFET; WMOS™ C4; unipolar; 600V; 7.8A; Idm: 26A; 86W Type of transistor: N-MOSFET Technology: WMOS™ C4 Polarisation: unipolar Drain-source voltage: 600V Drain current: 7.8A Pulsed drain current: 26A Power dissipation: 86W Case: TO263 Gate-source voltage: ±30V On-state resistance: 0.3Ω Mounting: SMD Gate charge: 14.6nC Kind of package: reel; tape Kind of channel: enhancement кількість в упаковці: 1 шт |
на замовлення 490 шт: термін постачання 7-14 дні (днів) |
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| WMM15N65C4 | WAYON |
Category: SMD N channel transistors Description: Transistor: N-MOSFET; WMOS™ C4; unipolar; 650V; 7.8A; Idm: 26A; 86W Type of transistor: N-MOSFET Technology: WMOS™ C4 Polarisation: unipolar Drain-source voltage: 650V Drain current: 7.8A Power dissipation: 86W Case: TO263 Gate-source voltage: ±30V On-state resistance: 0.3Ω Mounting: SMD Kind of package: reel; tape Kind of channel: enhancement Gate charge: 14.6nC Pulsed drain current: 26A |
товару немає в наявності |
В кошику од. на суму грн. | |||||||||||||||
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WMM161N15T2 | WAYON |
Category: SMD N channel transistors Description: Transistor: N-MOSFET; unipolar; 150V; 161A; Idm: 540A; 365W; TO263 Type of transistor: N-MOSFET Polarisation: unipolar Drain-source voltage: 150V Drain current: 161A Pulsed drain current: 540A Power dissipation: 365W Case: TO263 Gate-source voltage: ±20V On-state resistance: 6mΩ Mounting: SMD Gate charge: 78nC Kind of package: reel; tape Kind of channel: enhancement |
на замовлення 25 шт: термін постачання 21-30 дні (днів) |
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WMM161N15T2 | WAYON |
Category: SMD N channel transistors Description: Transistor: N-MOSFET; unipolar; 150V; 161A; Idm: 540A; 365W; TO263 Type of transistor: N-MOSFET Polarisation: unipolar Drain-source voltage: 150V Drain current: 161A Pulsed drain current: 540A Power dissipation: 365W Case: TO263 Gate-source voltage: ±20V On-state resistance: 6mΩ Mounting: SMD Gate charge: 78nC Kind of package: reel; tape Kind of channel: enhancement кількість в упаковці: 1 шт |
на замовлення 25 шт: термін постачання 7-14 дні (днів) |
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WMM16N60FD | WAYON |
Category: SMD N channel transistorsDescription: Transistor: N-MOSFET; WMOS™ FD; unipolar; 600V; 13A; 86W; TO263 Type of transistor: N-MOSFET Technology: WMOS™ FD Polarisation: unipolar Drain-source voltage: 600V Drain current: 13A Power dissipation: 86W Case: TO263 Gate-source voltage: ±30V On-state resistance: 0.32Ω Mounting: SMD Kind of package: reel; tape Kind of channel: enhancement |
на замовлення 298 шт: термін постачання 21-30 дні (днів) |
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WMM16N60FD | WAYON |
Category: SMD N channel transistorsDescription: Transistor: N-MOSFET; WMOS™ FD; unipolar; 600V; 13A; 86W; TO263 Type of transistor: N-MOSFET Technology: WMOS™ FD Polarisation: unipolar Drain-source voltage: 600V Drain current: 13A Power dissipation: 86W Case: TO263 Gate-source voltage: ±30V On-state resistance: 0.32Ω Mounting: SMD Kind of package: reel; tape Kind of channel: enhancement кількість в упаковці: 1 шт |
на замовлення 298 шт: термін постачання 7-14 дні (днів) |
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WMM16N70C2 | WAYON |
Category: SMD N channel transistorsDescription: Transistor: N-MOSFET; WMOS™ C2; unipolar; 700V; 12A; 86W; TO263 Type of transistor: N-MOSFET Technology: WMOS™ C2 Polarisation: unipolar Drain-source voltage: 700V Drain current: 12A Power dissipation: 86W Case: TO263 Gate-source voltage: ±30V On-state resistance: 0.42Ω Mounting: SMD Kind of package: reel; tape Kind of channel: enhancement |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||||||||
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WMM180N03TS | WAYON |
Category: SMD N channel transistors Description: Transistor: N-MOSFET; unipolar; 30V; 180A; Idm: 720A; 181W; TO263 Type of transistor: N-MOSFET Polarisation: unipolar Drain-source voltage: 30V Drain current: 180A Pulsed drain current: 720A Power dissipation: 181W Case: TO263 Gate-source voltage: ±20V On-state resistance: 3.5mΩ Mounting: SMD Gate charge: 32nC Kind of package: reel; tape Kind of channel: enhancement |
на замовлення 76 шт: термін постачання 21-30 дні (днів) |
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WMM180N03TS | WAYON |
Category: SMD N channel transistors Description: Transistor: N-MOSFET; unipolar; 30V; 180A; Idm: 720A; 181W; TO263 Type of transistor: N-MOSFET Polarisation: unipolar Drain-source voltage: 30V Drain current: 180A Pulsed drain current: 720A Power dissipation: 181W Case: TO263 Gate-source voltage: ±20V On-state resistance: 3.5mΩ Mounting: SMD Gate charge: 32nC Kind of package: reel; tape Kind of channel: enhancement кількість в упаковці: 1 шт |
на замовлення 76 шт: термін постачання 7-14 дні (днів) |
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| WMM18N65EM | WAYON |
Category: SMD N channel transistors Description: Transistor: N-MOSFET; WMOS™ EM; unipolar; 650V; 8.6A; Idm: 43A; 125W Type of transistor: N-MOSFET Technology: WMOS™ EM Polarisation: unipolar Drain-source voltage: 650V Drain current: 8.6A Pulsed drain current: 43A Power dissipation: 125W Case: TO263 Gate-source voltage: ±30V On-state resistance: 0.28Ω Mounting: SMD Gate charge: 26nC Kind of package: reel; tape Kind of channel: enhancement |
товару немає в наявності |
В кошику од. на суму грн. | |||||||||||||||
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WMM190N03TS | WAYON |
Category: SMD N channel transistors Description: Transistor: N-MOSFET; unipolar; 30V; 190A; Idm: 760A; 192W; TO263 Type of transistor: N-MOSFET Polarisation: unipolar Drain-source voltage: 30V Case: TO263 Gate-source voltage: ±20V On-state resistance: 2.6mΩ Mounting: SMD Kind of package: reel; tape Kind of channel: enhancement Power dissipation: 192W Drain current: 190A Pulsed drain current: 760A Gate charge: 0.1µC |
на замовлення 79 шт: термін постачання 21-30 дні (днів) |
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WMM190N03TS | WAYON |
Category: SMD N channel transistors Description: Transistor: N-MOSFET; unipolar; 30V; 190A; Idm: 760A; 192W; TO263 Type of transistor: N-MOSFET Polarisation: unipolar Drain-source voltage: 30V Case: TO263 Gate-source voltage: ±20V On-state resistance: 2.6mΩ Mounting: SMD Kind of package: reel; tape Kind of channel: enhancement Power dissipation: 192W Drain current: 190A Pulsed drain current: 760A Gate charge: 0.1µC кількість в упаковці: 1 шт |
на замовлення 79 шт: термін постачання 7-14 дні (днів) |
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| WMM20N20JN | WAYON | WMM20N20JN-CYG SMD N channel transistors |
на замовлення 590 шт: термін постачання 7-14 дні (днів) |
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WMM20N60C2 | WAYON |
Category: SMD N channel transistors Description: Transistor: N-MOSFET; WMOS™ C2; unipolar; 600V; 15A; 86W; TO263 Type of transistor: N-MOSFET Technology: WMOS™ C2 Polarisation: unipolar Drain-source voltage: 600V Drain current: 15A Power dissipation: 86W Case: TO263 Gate-source voltage: ±30V On-state resistance: 0.3Ω Mounting: SMD Kind of package: reel; tape Kind of channel: enhancement |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||||||||
| WMM220N20HG3 | WAYON | WMM220N20HG3-CYG SMD N channel transistors |
на замовлення 11 шт: термін постачання 7-14 дні (днів) |
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| WMM240P10HG4 | WAYON | WMM240P10HG4-CYG SMD P channel transistors |
на замовлення 47 шт: термін постачання 7-14 дні (днів) |
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WMM25N80M3 | WAYON |
Category: SMD N channel transistorsDescription: Transistor: N-MOSFET; WMOS™ M3; unipolar; 800V; 21A; 250W; TO263 Type of transistor: N-MOSFET Technology: WMOS™ M3 Polarisation: unipolar Drain-source voltage: 800V Drain current: 21A Power dissipation: 250W Case: TO263 Gate-source voltage: ±30V On-state resistance: 0.26Ω Mounting: SMD Kind of package: reel; tape Kind of channel: enhancement |
на замовлення 359 шт: термін постачання 21-30 дні (днів) |
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WMM25N80M3 | WAYON |
Category: SMD N channel transistorsDescription: Transistor: N-MOSFET; WMOS™ M3; unipolar; 800V; 21A; 250W; TO263 Type of transistor: N-MOSFET Technology: WMOS™ M3 Polarisation: unipolar Drain-source voltage: 800V Drain current: 21A Power dissipation: 250W Case: TO263 Gate-source voltage: ±30V On-state resistance: 0.26Ω Mounting: SMD Kind of package: reel; tape Kind of channel: enhancement кількість в упаковці: 1 шт |
на замовлення 359 шт: термін постачання 7-14 дні (днів) |
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WMM26N60C4 | WAYON |
Category: SMD N channel transistors Description: Transistor: N-MOSFET; WMOS™ C4; unipolar; 600V; 10.5A; Idm: 40A Type of transistor: N-MOSFET Technology: WMOS™ C4 Polarisation: unipolar Drain-source voltage: 600V Drain current: 10.5A Pulsed drain current: 40A Power dissipation: 135W Case: TO263 Gate-source voltage: ±30V On-state resistance: 0.19Ω Mounting: SMD Gate charge: 22.1nC Kind of package: reel; tape Kind of channel: enhancement |
на замовлення 780 шт: термін постачання 21-30 дні (днів) |
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WMM26N60C4 | WAYON |
Category: SMD N channel transistors Description: Transistor: N-MOSFET; WMOS™ C4; unipolar; 600V; 10.5A; Idm: 40A Type of transistor: N-MOSFET Technology: WMOS™ C4 Polarisation: unipolar Drain-source voltage: 600V Drain current: 10.5A Pulsed drain current: 40A Power dissipation: 135W Case: TO263 Gate-source voltage: ±30V On-state resistance: 0.19Ω Mounting: SMD Gate charge: 22.1nC Kind of package: reel; tape Kind of channel: enhancement кількість в упаковці: 1 шт |
на замовлення 780 шт: термін постачання 7-14 дні (днів) |
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WMM26N60F2 | WAYON |
Category: SMD N channel transistors Description: Transistor: N-MOSFET; WMOS™ F2; unipolar; 600V; 10.5A; Idm: 40A Type of transistor: N-MOSFET Technology: WMOS™ F2 Polarisation: unipolar Drain-source voltage: 600V Drain current: 10.5A Pulsed drain current: 40A Power dissipation: 135W Case: TO263 Gate-source voltage: ±30V On-state resistance: 0.21Ω Mounting: SMD Gate charge: 22.1nC Kind of package: reel; tape Kind of channel: enhancement |
на замовлення 796 шт: термін постачання 21-30 дні (днів) |
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WMM26N60F2 | WAYON |
Category: SMD N channel transistors Description: Transistor: N-MOSFET; WMOS™ F2; unipolar; 600V; 10.5A; Idm: 40A Type of transistor: N-MOSFET Technology: WMOS™ F2 Polarisation: unipolar Drain-source voltage: 600V Drain current: 10.5A Pulsed drain current: 40A Power dissipation: 135W Case: TO263 Gate-source voltage: ±30V On-state resistance: 0.21Ω Mounting: SMD Gate charge: 22.1nC Kind of package: reel; tape Kind of channel: enhancement кількість в упаковці: 1 шт |
на замовлення 796 шт: термін постачання 7-14 дні (днів) |
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WMM26N60FD | WAYON |
Category: SMD N channel transistorsDescription: Transistor: N-MOSFET; WMOS™ FD; unipolar; 600V; 20A; 147W; TO263 Type of transistor: N-MOSFET Technology: WMOS™ FD Polarisation: unipolar Drain-source voltage: 600V Drain current: 20A Power dissipation: 147W Case: TO263 Gate-source voltage: ±30V On-state resistance: 0.2Ω Mounting: SMD Kind of package: reel; tape Kind of channel: enhancement |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||||||||
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WMM26N65FD | WAYON |
Category: SMD N channel transistorsDescription: Transistor: N-MOSFET; WMOS™ FD; unipolar; 650V; 20A; 147W; TO263 Type of transistor: N-MOSFET Technology: WMOS™ FD Polarisation: unipolar Drain-source voltage: 650V Drain current: 20A Power dissipation: 147W Case: TO263 Gate-source voltage: ±30V On-state resistance: 0.2Ω Mounting: SMD Kind of package: reel; tape Kind of channel: enhancement |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||||||||
| WMM26N65SR | WAYON |
Category: SMD N channel transistors Description: Transistor: N-MOSFET; WMOS™ SR; unipolar; 650V; 12A; Idm: 50A; 147W Type of transistor: N-MOSFET Technology: WMOS™ SR Polarisation: unipolar Drain-source voltage: 650V Drain current: 12A Pulsed drain current: 50A Power dissipation: 147W Case: TO263 Gate-source voltage: ±30V On-state resistance: 198mΩ Mounting: SMD Gate charge: 34.7nC Kind of package: reel; tape Kind of channel: enhancement |
товару немає в наявності |
В кошику од. на суму грн. | |||||||||||||||
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WMM28N60C4 | WAYON |
Category: SMD N channel transistorsDescription: Transistor: N-MOSFET; WMOS™ C4; unipolar; 600V; 13A; Idm: 65A; 160W Type of transistor: N-MOSFET Technology: WMOS™ C4 Polarisation: unipolar Drain-source voltage: 600V Drain current: 13A Pulsed drain current: 65A Power dissipation: 160W Case: TO263 Gate-source voltage: ±30V On-state resistance: 0.16Ω Mounting: SMD Gate charge: 27.3nC Kind of package: reel; tape Kind of channel: enhancement |
на замовлення 800 шт: термін постачання 21-30 дні (днів) |
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WMM28N60C4 | WAYON |
Category: SMD N channel transistorsDescription: Transistor: N-MOSFET; WMOS™ C4; unipolar; 600V; 13A; Idm: 65A; 160W Type of transistor: N-MOSFET Technology: WMOS™ C4 Polarisation: unipolar Drain-source voltage: 600V Drain current: 13A Pulsed drain current: 65A Power dissipation: 160W Case: TO263 Gate-source voltage: ±30V On-state resistance: 0.16Ω Mounting: SMD Gate charge: 27.3nC Kind of package: reel; tape Kind of channel: enhancement кількість в упаковці: 1 шт |
на замовлення 800 шт: термін постачання 7-14 дні (днів) |
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| WMM340N20HG2 | WAYON | WMM340N20HG2-CYG SMD N channel transistors |
на замовлення 38 шт: термін постачання 7-14 дні (днів) |
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| WMM36N60C4 | WAYON |
Category: SMD N channel transistorsDescription: Transistor: N-MOSFET; WMOS™ C4; unipolar; 600V; 20A; Idm: 100A; 277W Type of transistor: N-MOSFET Technology: WMOS™ C4 Polarisation: unipolar Drain-source voltage: 600V Drain current: 20A Pulsed drain current: 100A Power dissipation: 277W Case: TO263 Gate-source voltage: ±30V On-state resistance: 97mΩ Mounting: SMD Gate charge: 46nC Kind of package: reel; tape Kind of channel: enhancement |
товару немає в наявності |
В кошику од. на суму грн. | |||||||||||||||
| WMM36N60F2 | WAYON |
Category: SMD N channel transistors Description: Transistor: N-MOSFET; WMOS™ F2; unipolar; 600V; 20A; Idm: 100A; 277W Type of transistor: N-MOSFET Technology: WMOS™ F2 Polarisation: unipolar Drain-source voltage: 600V Drain current: 20A Power dissipation: 277W Case: TO263 Gate-source voltage: ±30V On-state resistance: 0.11Ω Mounting: SMD Kind of package: reel; tape Kind of channel: enhancement Pulsed drain current: 100A Gate charge: 46nC |
товару немає в наявності |
В кошику од. на суму грн. | |||||||||||||||
| WMM36N65C4 | WAYON |
Category: SMD N channel transistors Description: Transistor: N-MOSFET; WMOS™ C4; unipolar; 650V; 20A; Idm: 100A; 277W Type of transistor: N-MOSFET Technology: WMOS™ C4 Polarisation: unipolar Drain-source voltage: 650V Drain current: 20A Pulsed drain current: 100A Power dissipation: 277W Case: TO263 Gate-source voltage: ±30V On-state resistance: 97mΩ Mounting: SMD Gate charge: 46nC Kind of package: reel; tape Kind of channel: enhancement |
товару немає в наявності |
В кошику од. на суму грн. | |||||||||||||||
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WMM38N60C2 | WAYON |
Category: SMD N channel transistorsDescription: Transistor: N-MOSFET; WMOS™ C2; unipolar; 600V; 38A; 277W; TO263 Type of transistor: N-MOSFET Technology: WMOS™ C2 Polarisation: unipolar Drain-source voltage: 600V Drain current: 38A Power dissipation: 277W Case: TO263 Gate-source voltage: ±30V On-state resistance: 99mΩ Mounting: SMD Kind of package: reel; tape Kind of channel: enhancement |
на замовлення 361 шт: термін постачання 21-30 дні (днів) |
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WMM38N60C2 | WAYON |
Category: SMD N channel transistorsDescription: Transistor: N-MOSFET; WMOS™ C2; unipolar; 600V; 38A; 277W; TO263 Type of transistor: N-MOSFET Technology: WMOS™ C2 Polarisation: unipolar Drain-source voltage: 600V Drain current: 38A Power dissipation: 277W Case: TO263 Gate-source voltage: ±30V On-state resistance: 99mΩ Mounting: SMD Kind of package: reel; tape Kind of channel: enhancement кількість в упаковці: 1 шт |
на замовлення 361 шт: термін постачання 7-14 дні (днів) |
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| WMM4N90D1 | WAYON |
Category: SMD N channel transistors Description: Transistor: N-MOSFET; WMOS™ D1; unipolar; 900V; 4A; Idm: 16A; 65W Type of transistor: N-MOSFET Polarisation: unipolar Drain-source voltage: 900V Drain current: 4A Case: TO263 Gate-source voltage: ±30V On-state resistance: 2.9Ω Mounting: SMD Kind of package: reel; tape Kind of channel: enhancement Technology: WMOS™ D1 Pulsed drain current: 16A Power dissipation: 65W Gate charge: 26nC |
товару немає в наявності |
В кошику од. на суму грн. | |||||||||||||||
| WMM4N90D1B | WAYON |
Category: SMD N channel transistors Description: Transistor: N-MOSFET; WMOS™ D1; unipolar; 900V; 4A; Idm: 16A; 63W Type of transistor: N-MOSFET Polarisation: unipolar Drain-source voltage: 900V Drain current: 4A Case: TO263 Gate-source voltage: ±30V On-state resistance: 1.85Ω Mounting: SMD Kind of package: reel; tape Kind of channel: enhancement Technology: WMOS™ D1 Pulsed drain current: 16A Power dissipation: 63W Gate charge: 34nC |
товару немає в наявності |
В кошику од. на суму грн. | |||||||||||||||
| WMM50P04T1 | WAYON | WMM50P04T1-CYG SMD P channel transistors |
на замовлення 56 шт: термін постачання 7-14 дні (днів) |
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| WMM6N90D1 | WAYON |
Category: SMD N channel transistors Description: Transistor: N-MOSFET; WMOS™ D1; unipolar; 900V; 6A; Idm: 24A; 100W Type of transistor: N-MOSFET Technology: WMOS™ D1 Polarisation: unipolar Drain-source voltage: 900V Drain current: 6A Pulsed drain current: 24A Power dissipation: 100W Case: TO263 Gate-source voltage: ±30V On-state resistance: 1.7Ω Mounting: SMD Gate charge: 86.2nC Kind of package: reel; tape Kind of channel: enhancement |
товару немає в наявності |
В кошику од. на суму грн. | |||||||||||||||
| WMM6N90D1B | WAYON |
Category: SMD N channel transistors Description: Transistor: N-MOSFET; unipolar; 900V; 6A; TO263 Type of transistor: N-MOSFET Polarisation: unipolar Drain-source voltage: 900V Drain current: 6A Case: TO263 Gate-source voltage: ±30V On-state resistance: 2.3Ω Mounting: SMD Kind of package: reel; tape Kind of channel: enhancement |
товару немає в наявності |
В кошику од. на суму грн. | |||||||||||||||
| WMM80N08TS | WAYON | WMM80N08TS-CYG SMD N channel transistors |
на замовлення 72 шт: термін постачання 7-14 дні (днів) |
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| WMM80P04TS | WAYON | WMM80P04TS-CYG SMD P channel transistors |
на замовлення 35 шт: термін постачання 7-14 дні (днів) |
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| WMM10N65C2 |
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Виробник: WAYON
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; WMOS™ C2; unipolar; 650V; 8A; 57W; TO263
Type of transistor: N-MOSFET
Technology: WMOS™ C2
Polarisation: unipolar
Drain-source voltage: 650V
Drain current: 8A
Power dissipation: 57W
Case: TO263
Gate-source voltage: ±30V
On-state resistance: 690mΩ
Mounting: SMD
Kind of package: reel; tape
Kind of channel: enhancement
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; WMOS™ C2; unipolar; 650V; 8A; 57W; TO263
Type of transistor: N-MOSFET
Technology: WMOS™ C2
Polarisation: unipolar
Drain-source voltage: 650V
Drain current: 8A
Power dissipation: 57W
Case: TO263
Gate-source voltage: ±30V
On-state resistance: 690mΩ
Mounting: SMD
Kind of package: reel; tape
Kind of channel: enhancement
на замовлення 574 шт:
термін постачання 21-30 дні (днів)| Кількість | Ціна |
|---|---|
| 10+ | 47.92 грн |
| 13+ | 33.62 грн |
| 25+ | 29.66 грн |
| 100+ | 26.86 грн |
| WMM10N65C2 |
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Виробник: WAYON
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; WMOS™ C2; unipolar; 650V; 8A; 57W; TO263
Type of transistor: N-MOSFET
Technology: WMOS™ C2
Polarisation: unipolar
Drain-source voltage: 650V
Drain current: 8A
Power dissipation: 57W
Case: TO263
Gate-source voltage: ±30V
On-state resistance: 690mΩ
Mounting: SMD
Kind of package: reel; tape
Kind of channel: enhancement
кількість в упаковці: 1 шт
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; WMOS™ C2; unipolar; 650V; 8A; 57W; TO263
Type of transistor: N-MOSFET
Technology: WMOS™ C2
Polarisation: unipolar
Drain-source voltage: 650V
Drain current: 8A
Power dissipation: 57W
Case: TO263
Gate-source voltage: ±30V
On-state resistance: 690mΩ
Mounting: SMD
Kind of package: reel; tape
Kind of channel: enhancement
кількість в упаковці: 1 шт
на замовлення 574 шт:
термін постачання 7-14 дні (днів)| Кількість | Ціна |
|---|---|
| 6+ | 57.50 грн |
| 8+ | 41.89 грн |
| 25+ | 35.60 грн |
| 100+ | 32.23 грн |
| 800+ | 30.26 грн |
| WMM10N70C2 |
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Виробник: WAYON
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; WMOS™ C2; unipolar; 700V; 7.5A; 57W; TO263
Type of transistor: N-MOSFET
Technology: WMOS™ C2
Polarisation: unipolar
Drain-source voltage: 700V
Drain current: 7.5A
Power dissipation: 57W
Case: TO263
Gate-source voltage: ±30V
On-state resistance: 920mΩ
Mounting: SMD
Kind of package: reel; tape
Kind of channel: enhancement
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; WMOS™ C2; unipolar; 700V; 7.5A; 57W; TO263
Type of transistor: N-MOSFET
Technology: WMOS™ C2
Polarisation: unipolar
Drain-source voltage: 700V
Drain current: 7.5A
Power dissipation: 57W
Case: TO263
Gate-source voltage: ±30V
On-state resistance: 920mΩ
Mounting: SMD
Kind of package: reel; tape
Kind of channel: enhancement
товару немає в наявності
В кошику
од. на суму грн.
| WMM10N80M3 |
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Виробник: WAYON
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; WMOS™ M3; unipolar; 800V; 10A; 85W; TO263
Type of transistor: N-MOSFET
Technology: WMOS™ M3
Polarisation: unipolar
Drain-source voltage: 800V
Drain current: 10A
Power dissipation: 85W
Case: TO263
Gate-source voltage: ±30V
On-state resistance: 1.03Ω
Mounting: SMD
Kind of package: reel; tape
Kind of channel: enhancement
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; WMOS™ M3; unipolar; 800V; 10A; 85W; TO263
Type of transistor: N-MOSFET
Technology: WMOS™ M3
Polarisation: unipolar
Drain-source voltage: 800V
Drain current: 10A
Power dissipation: 85W
Case: TO263
Gate-source voltage: ±30V
On-state resistance: 1.03Ω
Mounting: SMD
Kind of package: reel; tape
Kind of channel: enhancement
товару немає в наявності
В кошику
од. на суму грн.
| WMM115N15HG4 |
Виробник: WAYON
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 150V; 88A; Idm: 352A; 178.6W; TO263
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 150V
Drain current: 88A
Pulsed drain current: 352A
Power dissipation: 178.6W
Case: TO263
Gate-source voltage: ±20V
On-state resistance: 11.5mΩ
Mounting: SMD
Gate charge: 45nC
Kind of package: reel; tape
Kind of channel: enhancement
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 150V; 88A; Idm: 352A; 178.6W; TO263
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 150V
Drain current: 88A
Pulsed drain current: 352A
Power dissipation: 178.6W
Case: TO263
Gate-source voltage: ±20V
On-state resistance: 11.5mΩ
Mounting: SMD
Gate charge: 45nC
Kind of package: reel; tape
Kind of channel: enhancement
на замовлення 95 шт:
термін постачання 21-30 дні (днів)| Кількість | Ціна |
|---|---|
| 6+ | 71.69 грн |
| 25+ | 63.45 грн |
| WMM115N15HG4 |
Виробник: WAYON
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 150V; 88A; Idm: 352A; 178.6W; TO263
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 150V
Drain current: 88A
Pulsed drain current: 352A
Power dissipation: 178.6W
Case: TO263
Gate-source voltage: ±20V
On-state resistance: 11.5mΩ
Mounting: SMD
Gate charge: 45nC
Kind of package: reel; tape
Kind of channel: enhancement
кількість в упаковці: 1 шт
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 150V; 88A; Idm: 352A; 178.6W; TO263
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 150V
Drain current: 88A
Pulsed drain current: 352A
Power dissipation: 178.6W
Case: TO263
Gate-source voltage: ±20V
On-state resistance: 11.5mΩ
Mounting: SMD
Gate charge: 45nC
Kind of package: reel; tape
Kind of channel: enhancement
кількість в упаковці: 1 шт
на замовлення 95 шт:
термін постачання 7-14 дні (днів)| Кількість | Ціна |
|---|---|
| 4+ | 97.96 грн |
| 5+ | 89.33 грн |
| 25+ | 76.13 грн |
| 100+ | 67.24 грн |
| WMM11N60C2 |
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Виробник: WAYON
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; WMOS™ C2; unipolar; 600V; 9A; 63W; TO263
Type of transistor: N-MOSFET
Technology: WMOS™ C2
Polarisation: unipolar
Drain-source voltage: 600V
Drain current: 9A
Power dissipation: 63W
Case: TO263
Gate-source voltage: ±30V
On-state resistance: 0.54Ω
Mounting: SMD
Kind of package: reel; tape
Kind of channel: enhancement
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; WMOS™ C2; unipolar; 600V; 9A; 63W; TO263
Type of transistor: N-MOSFET
Technology: WMOS™ C2
Polarisation: unipolar
Drain-source voltage: 600V
Drain current: 9A
Power dissipation: 63W
Case: TO263
Gate-source voltage: ±30V
On-state resistance: 0.54Ω
Mounting: SMD
Kind of package: reel; tape
Kind of channel: enhancement
товару немає в наявності
В кошику
од. на суму грн.
| WMM11N65C2 |
Виробник: WAYON
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; WMOS™ C2; unipolar; 650V; 9A; 63W; TO263
Type of transistor: N-MOSFET
Technology: WMOS™ C2
Polarisation: unipolar
Drain-source voltage: 650V
Drain current: 9A
Power dissipation: 63W
Case: TO263
Gate-source voltage: ±30V
On-state resistance: 0.54Ω
Mounting: SMD
Kind of package: reel; tape
Kind of channel: enhancement
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; WMOS™ C2; unipolar; 650V; 9A; 63W; TO263
Type of transistor: N-MOSFET
Technology: WMOS™ C2
Polarisation: unipolar
Drain-source voltage: 650V
Drain current: 9A
Power dissipation: 63W
Case: TO263
Gate-source voltage: ±30V
On-state resistance: 0.54Ω
Mounting: SMD
Kind of package: reel; tape
Kind of channel: enhancement
на замовлення 557 шт:
термін постачання 21-30 дні (днів)| Кількість | Ціна |
|---|---|
| 10+ | 47.92 грн |
| 11+ | 40.37 грн |
| 25+ | 35.35 грн |
| 100+ | 31.97 грн |
| WMM11N65C2 |
Виробник: WAYON
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; WMOS™ C2; unipolar; 650V; 9A; 63W; TO263
Type of transistor: N-MOSFET
Technology: WMOS™ C2
Polarisation: unipolar
Drain-source voltage: 650V
Drain current: 9A
Power dissipation: 63W
Case: TO263
Gate-source voltage: ±30V
On-state resistance: 0.54Ω
Mounting: SMD
Kind of package: reel; tape
Kind of channel: enhancement
кількість в упаковці: 1 шт
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; WMOS™ C2; unipolar; 650V; 9A; 63W; TO263
Type of transistor: N-MOSFET
Technology: WMOS™ C2
Polarisation: unipolar
Drain-source voltage: 650V
Drain current: 9A
Power dissipation: 63W
Case: TO263
Gate-source voltage: ±30V
On-state resistance: 0.54Ω
Mounting: SMD
Kind of package: reel; tape
Kind of channel: enhancement
кількість в упаковці: 1 шт
на замовлення 557 шт:
термін постачання 7-14 дні (днів)| Кількість | Ціна |
|---|---|
| 6+ | 57.50 грн |
| 7+ | 50.31 грн |
| 25+ | 42.42 грн |
| 100+ | 38.36 грн |
| 800+ | 35.69 грн |
| WMM120N04TS |
Виробник: WAYON
WMM120N04TS-CYG SMD N channel transistors
WMM120N04TS-CYG SMD N channel transistors
на замовлення 81 шт:
термін постачання 7-14 дні (днів)| Кількість | Ціна |
|---|---|
| 5+ | 68.79 грн |
| 39+ | 30.75 грн |
| 105+ | 29.07 грн |
| WMM120P06TS |
Виробник: WAYON
WMM120P06TS-CYG SMD P channel transistors
WMM120P06TS-CYG SMD P channel transistors
на замовлення 361 шт:
термін постачання 7-14 дні (днів)| Кількість | Ціна |
|---|---|
| 4+ | 101.16 грн |
| 15+ | 81.08 грн |
| 40+ | 77.12 грн |
| 1600+ | 77.01 грн |
| WMM12N80M3 |
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Виробник: WAYON
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; WMOS™ M3; unipolar; 800V; 12A; 86W; TO263
Case: TO263
Mounting: SMD
Kind of package: reel; tape
On-state resistance: 620mΩ
Drain current: 12A
Power dissipation: 86W
Gate-source voltage: ±30V
Drain-source voltage: 800V
Kind of channel: enhancement
Technology: WMOS™ M3
Type of transistor: N-MOSFET
Polarisation: unipolar
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; WMOS™ M3; unipolar; 800V; 12A; 86W; TO263
Case: TO263
Mounting: SMD
Kind of package: reel; tape
On-state resistance: 620mΩ
Drain current: 12A
Power dissipation: 86W
Gate-source voltage: ±30V
Drain-source voltage: 800V
Kind of channel: enhancement
Technology: WMOS™ M3
Type of transistor: N-MOSFET
Polarisation: unipolar
товару немає в наявності
В кошику
од. на суму грн.
| WMM130N20JN |
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Виробник: WAYON
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 200V; 117A; Idm: 620A; 416W; TO263
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 200V
Drain current: 117A
Pulsed drain current: 620A
Power dissipation: 416W
Case: TO263
Gate-source voltage: ±20V
On-state resistance: 5.2mΩ
Mounting: SMD
Gate charge: 188nC
Kind of package: reel; tape
Kind of channel: enhancement
Reverse recovery time: 196ns
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 200V; 117A; Idm: 620A; 416W; TO263
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 200V
Drain current: 117A
Pulsed drain current: 620A
Power dissipation: 416W
Case: TO263
Gate-source voltage: ±20V
On-state resistance: 5.2mΩ
Mounting: SMD
Gate charge: 188nC
Kind of package: reel; tape
Kind of channel: enhancement
Reverse recovery time: 196ns
товару немає в наявності
В кошику
од. на суму грн.
| WMM13N80M3 |
Виробник: WAYON
WMM13N80M3-CYG SMD N channel transistors
WMM13N80M3-CYG SMD N channel transistors
на замовлення 575 шт:
термін постачання 7-14 дні (днів)| Кількість | Ціна |
|---|---|
| 6+ | 56.97 грн |
| 24+ | 50.62 грн |
| 64+ | 47.86 грн |
| WMM14N60C2 |
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Виробник: WAYON
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; WMOS™ C2; unipolar; 600V; 11A; 85W; TO263
Type of transistor: N-MOSFET
Technology: WMOS™ C2
Polarisation: unipolar
Drain-source voltage: 600V
Drain current: 11A
Power dissipation: 85W
Case: TO263
Gate-source voltage: ±30V
On-state resistance: 405mΩ
Mounting: SMD
Kind of package: reel; tape
Kind of channel: enhancement
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; WMOS™ C2; unipolar; 600V; 11A; 85W; TO263
Type of transistor: N-MOSFET
Technology: WMOS™ C2
Polarisation: unipolar
Drain-source voltage: 600V
Drain current: 11A
Power dissipation: 85W
Case: TO263
Gate-source voltage: ±30V
On-state resistance: 405mΩ
Mounting: SMD
Kind of package: reel; tape
Kind of channel: enhancement
на замовлення 11 шт:
термін постачання 21-30 дні (днів)| Кількість | Ціна |
|---|---|
| 7+ | 63.89 грн |
| 8+ | 53.56 грн |
| WMM14N60C2 |
![]() |
Виробник: WAYON
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; WMOS™ C2; unipolar; 600V; 11A; 85W; TO263
Type of transistor: N-MOSFET
Technology: WMOS™ C2
Polarisation: unipolar
Drain-source voltage: 600V
Drain current: 11A
Power dissipation: 85W
Case: TO263
Gate-source voltage: ±30V
On-state resistance: 405mΩ
Mounting: SMD
Kind of package: reel; tape
Kind of channel: enhancement
кількість в упаковці: 1 шт
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; WMOS™ C2; unipolar; 600V; 11A; 85W; TO263
Type of transistor: N-MOSFET
Technology: WMOS™ C2
Polarisation: unipolar
Drain-source voltage: 600V
Drain current: 11A
Power dissipation: 85W
Case: TO263
Gate-source voltage: ±30V
On-state resistance: 405mΩ
Mounting: SMD
Kind of package: reel; tape
Kind of channel: enhancement
кількість в упаковці: 1 шт
на замовлення 11 шт:
термін постачання 7-14 дні (днів)| Кількість | Ціна |
|---|---|
| 5+ | 66.74 грн |
| 25+ | 56.76 грн |
| 100+ | 50.92 грн |
| 800+ | 47.26 грн |
| WMM14N65C4 |
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Виробник: WAYON
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; WMOS™ C4; unipolar; 650V; 6A; Idm: 26A; 85W
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 650V
Drain current: 6A
Pulsed drain current: 26A
Power dissipation: 85W
Case: TO263
Gate-source voltage: ±30V
On-state resistance: 0.38Ω
Mounting: SMD
Gate charge: 13nC
Kind of package: reel; tape
Kind of channel: enhancement
Technology: WMOS™ C4
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; WMOS™ C4; unipolar; 650V; 6A; Idm: 26A; 85W
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 650V
Drain current: 6A
Pulsed drain current: 26A
Power dissipation: 85W
Case: TO263
Gate-source voltage: ±30V
On-state resistance: 0.38Ω
Mounting: SMD
Gate charge: 13nC
Kind of package: reel; tape
Kind of channel: enhancement
Technology: WMOS™ C4
товару немає в наявності
В кошику
од. на суму грн.
| WMM14N70C2 |
Виробник: WAYON
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; WMOS™ C2; unipolar; 700V; 11A; 85W; TO263
Type of transistor: N-MOSFET
Technology: WMOS™ C2
Polarisation: unipolar
Drain-source voltage: 700V
Drain current: 11A
Power dissipation: 85W
Case: TO263
Gate-source voltage: ±30V
On-state resistance: 530mΩ
Mounting: SMD
Kind of package: reel; tape
Kind of channel: enhancement
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; WMOS™ C2; unipolar; 700V; 11A; 85W; TO263
Type of transistor: N-MOSFET
Technology: WMOS™ C2
Polarisation: unipolar
Drain-source voltage: 700V
Drain current: 11A
Power dissipation: 85W
Case: TO263
Gate-source voltage: ±30V
On-state resistance: 530mΩ
Mounting: SMD
Kind of package: reel; tape
Kind of channel: enhancement
на замовлення 233 шт:
термін постачання 21-30 дні (днів)| Кількість | Ціна |
|---|---|
| 7+ | 65.66 грн |
| 8+ | 53.56 грн |
| 25+ | 48.61 грн |
| 100+ | 44.49 грн |
| WMM14N70C2 |
Виробник: WAYON
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; WMOS™ C2; unipolar; 700V; 11A; 85W; TO263
Type of transistor: N-MOSFET
Technology: WMOS™ C2
Polarisation: unipolar
Drain-source voltage: 700V
Drain current: 11A
Power dissipation: 85W
Case: TO263
Gate-source voltage: ±30V
On-state resistance: 530mΩ
Mounting: SMD
Kind of package: reel; tape
Kind of channel: enhancement
кількість в упаковці: 1 шт
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; WMOS™ C2; unipolar; 700V; 11A; 85W; TO263
Type of transistor: N-MOSFET
Technology: WMOS™ C2
Polarisation: unipolar
Drain-source voltage: 700V
Drain current: 11A
Power dissipation: 85W
Case: TO263
Gate-source voltage: ±30V
On-state resistance: 530mΩ
Mounting: SMD
Kind of package: reel; tape
Kind of channel: enhancement
кількість в упаковці: 1 шт
на замовлення 233 шт:
термін постачання 7-14 дні (днів)| Кількість | Ціна |
|---|---|
| 5+ | 66.74 грн |
| 25+ | 58.34 грн |
| 100+ | 53.39 грн |
| 800+ | 50.43 грн |
| WMM15N60C4 |
Виробник: WAYON
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; WMOS™ C4; unipolar; 600V; 7.8A; Idm: 26A; 86W
Type of transistor: N-MOSFET
Technology: WMOS™ C4
Polarisation: unipolar
Drain-source voltage: 600V
Drain current: 7.8A
Pulsed drain current: 26A
Power dissipation: 86W
Case: TO263
Gate-source voltage: ±30V
On-state resistance: 0.3Ω
Mounting: SMD
Gate charge: 14.6nC
Kind of package: reel; tape
Kind of channel: enhancement
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; WMOS™ C4; unipolar; 600V; 7.8A; Idm: 26A; 86W
Type of transistor: N-MOSFET
Technology: WMOS™ C4
Polarisation: unipolar
Drain-source voltage: 600V
Drain current: 7.8A
Pulsed drain current: 26A
Power dissipation: 86W
Case: TO263
Gate-source voltage: ±30V
On-state resistance: 0.3Ω
Mounting: SMD
Gate charge: 14.6nC
Kind of package: reel; tape
Kind of channel: enhancement
на замовлення 490 шт:
термін постачання 21-30 дні (днів)| Кількість | Ціна |
|---|---|
| 6+ | 70.86 грн |
| 10+ | 60.15 грн |
| 25+ | 53.56 грн |
| 100+ | 50.26 грн |
| 250+ | 47.79 грн |
| WMM15N60C4 |
Виробник: WAYON
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; WMOS™ C4; unipolar; 600V; 7.8A; Idm: 26A; 86W
Type of transistor: N-MOSFET
Technology: WMOS™ C4
Polarisation: unipolar
Drain-source voltage: 600V
Drain current: 7.8A
Pulsed drain current: 26A
Power dissipation: 86W
Case: TO263
Gate-source voltage: ±30V
On-state resistance: 0.3Ω
Mounting: SMD
Gate charge: 14.6nC
Kind of package: reel; tape
Kind of channel: enhancement
кількість в упаковці: 1 шт
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; WMOS™ C4; unipolar; 600V; 7.8A; Idm: 26A; 86W
Type of transistor: N-MOSFET
Technology: WMOS™ C4
Polarisation: unipolar
Drain-source voltage: 600V
Drain current: 7.8A
Pulsed drain current: 26A
Power dissipation: 86W
Case: TO263
Gate-source voltage: ±30V
On-state resistance: 0.3Ω
Mounting: SMD
Gate charge: 14.6nC
Kind of package: reel; tape
Kind of channel: enhancement
кількість в упаковці: 1 шт
на замовлення 490 шт:
термін постачання 7-14 дні (днів)| Кількість | Ціна |
|---|---|
| 4+ | 88.30 грн |
| 10+ | 72.18 грн |
| 25+ | 64.27 грн |
| 100+ | 60.31 грн |
| 250+ | 57.35 грн |
| 500+ | 53.39 грн |
| WMM15N65C4 |
Виробник: WAYON
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; WMOS™ C4; unipolar; 650V; 7.8A; Idm: 26A; 86W
Type of transistor: N-MOSFET
Technology: WMOS™ C4
Polarisation: unipolar
Drain-source voltage: 650V
Drain current: 7.8A
Power dissipation: 86W
Case: TO263
Gate-source voltage: ±30V
On-state resistance: 0.3Ω
Mounting: SMD
Kind of package: reel; tape
Kind of channel: enhancement
Gate charge: 14.6nC
Pulsed drain current: 26A
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; WMOS™ C4; unipolar; 650V; 7.8A; Idm: 26A; 86W
Type of transistor: N-MOSFET
Technology: WMOS™ C4
Polarisation: unipolar
Drain-source voltage: 650V
Drain current: 7.8A
Power dissipation: 86W
Case: TO263
Gate-source voltage: ±30V
On-state resistance: 0.3Ω
Mounting: SMD
Kind of package: reel; tape
Kind of channel: enhancement
Gate charge: 14.6nC
Pulsed drain current: 26A
товару немає в наявності
В кошику
од. на суму грн.
| WMM161N15T2 |
Виробник: WAYON
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 150V; 161A; Idm: 540A; 365W; TO263
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 150V
Drain current: 161A
Pulsed drain current: 540A
Power dissipation: 365W
Case: TO263
Gate-source voltage: ±20V
On-state resistance: 6mΩ
Mounting: SMD
Gate charge: 78nC
Kind of package: reel; tape
Kind of channel: enhancement
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 150V; 161A; Idm: 540A; 365W; TO263
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 150V
Drain current: 161A
Pulsed drain current: 540A
Power dissipation: 365W
Case: TO263
Gate-source voltage: ±20V
On-state resistance: 6mΩ
Mounting: SMD
Gate charge: 78nC
Kind of package: reel; tape
Kind of channel: enhancement
на замовлення 25 шт:
термін постачання 21-30 дні (днів)| Кількість | Ціна |
|---|---|
| 3+ | 212.96 грн |
| 5+ | 187.04 грн |
| 25+ | 164.79 грн |
| WMM161N15T2 |
Виробник: WAYON
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 150V; 161A; Idm: 540A; 365W; TO263
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 150V
Drain current: 161A
Pulsed drain current: 540A
Power dissipation: 365W
Case: TO263
Gate-source voltage: ±20V
On-state resistance: 6mΩ
Mounting: SMD
Gate charge: 78nC
Kind of package: reel; tape
Kind of channel: enhancement
кількість в упаковці: 1 шт
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 150V; 161A; Idm: 540A; 365W; TO263
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 150V
Drain current: 161A
Pulsed drain current: 540A
Power dissipation: 365W
Case: TO263
Gate-source voltage: ±20V
On-state resistance: 6mΩ
Mounting: SMD
Gate charge: 78nC
Kind of package: reel; tape
Kind of channel: enhancement
кількість в упаковці: 1 шт
на замовлення 25 шт:
термін постачання 7-14 дні (днів)| Кількість | Ціна |
|---|---|
| 2+ | 255.56 грн |
| 5+ | 233.08 грн |
| 25+ | 197.75 грн |
| 100+ | 177.98 грн |
| 800+ | 176.00 грн |
| WMM16N60FD |
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Виробник: WAYON
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; WMOS™ FD; unipolar; 600V; 13A; 86W; TO263
Type of transistor: N-MOSFET
Technology: WMOS™ FD
Polarisation: unipolar
Drain-source voltage: 600V
Drain current: 13A
Power dissipation: 86W
Case: TO263
Gate-source voltage: ±30V
On-state resistance: 0.32Ω
Mounting: SMD
Kind of package: reel; tape
Kind of channel: enhancement
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; WMOS™ FD; unipolar; 600V; 13A; 86W; TO263
Type of transistor: N-MOSFET
Technology: WMOS™ FD
Polarisation: unipolar
Drain-source voltage: 600V
Drain current: 13A
Power dissipation: 86W
Case: TO263
Gate-source voltage: ±30V
On-state resistance: 0.32Ω
Mounting: SMD
Kind of package: reel; tape
Kind of channel: enhancement
на замовлення 298 шт:
термін постачання 21-30 дні (днів)| Кількість | Ціна |
|---|---|
| 6+ | 71.69 грн |
| 25+ | 65.09 грн |
| 100+ | 61.80 грн |
| WMM16N60FD |
![]() |
Виробник: WAYON
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; WMOS™ FD; unipolar; 600V; 13A; 86W; TO263
Type of transistor: N-MOSFET
Technology: WMOS™ FD
Polarisation: unipolar
Drain-source voltage: 600V
Drain current: 13A
Power dissipation: 86W
Case: TO263
Gate-source voltage: ±30V
On-state resistance: 0.32Ω
Mounting: SMD
Kind of package: reel; tape
Kind of channel: enhancement
кількість в упаковці: 1 шт
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; WMOS™ FD; unipolar; 600V; 13A; 86W; TO263
Type of transistor: N-MOSFET
Technology: WMOS™ FD
Polarisation: unipolar
Drain-source voltage: 600V
Drain current: 13A
Power dissipation: 86W
Case: TO263
Gate-source voltage: ±30V
On-state resistance: 0.32Ω
Mounting: SMD
Kind of package: reel; tape
Kind of channel: enhancement
кількість в упаковці: 1 шт
на замовлення 298 шт:
термін постачання 7-14 дні (днів)| Кількість | Ціна |
|---|---|
| 4+ | 103.29 грн |
| 5+ | 89.33 грн |
| 25+ | 78.11 грн |
| 100+ | 74.16 грн |
| WMM16N70C2 |
![]() |
Виробник: WAYON
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; WMOS™ C2; unipolar; 700V; 12A; 86W; TO263
Type of transistor: N-MOSFET
Technology: WMOS™ C2
Polarisation: unipolar
Drain-source voltage: 700V
Drain current: 12A
Power dissipation: 86W
Case: TO263
Gate-source voltage: ±30V
On-state resistance: 0.42Ω
Mounting: SMD
Kind of package: reel; tape
Kind of channel: enhancement
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; WMOS™ C2; unipolar; 700V; 12A; 86W; TO263
Type of transistor: N-MOSFET
Technology: WMOS™ C2
Polarisation: unipolar
Drain-source voltage: 700V
Drain current: 12A
Power dissipation: 86W
Case: TO263
Gate-source voltage: ±30V
On-state resistance: 0.42Ω
Mounting: SMD
Kind of package: reel; tape
Kind of channel: enhancement
товару немає в наявності
В кошику
од. на суму грн.
| WMM180N03TS |
Виробник: WAYON
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 30V; 180A; Idm: 720A; 181W; TO263
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 30V
Drain current: 180A
Pulsed drain current: 720A
Power dissipation: 181W
Case: TO263
Gate-source voltage: ±20V
On-state resistance: 3.5mΩ
Mounting: SMD
Gate charge: 32nC
Kind of package: reel; tape
Kind of channel: enhancement
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 30V; 180A; Idm: 720A; 181W; TO263
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 30V
Drain current: 180A
Pulsed drain current: 720A
Power dissipation: 181W
Case: TO263
Gate-source voltage: ±20V
On-state resistance: 3.5mΩ
Mounting: SMD
Gate charge: 32nC
Kind of package: reel; tape
Kind of channel: enhancement
на замовлення 76 шт:
термін постачання 21-30 дні (днів)| Кількість | Ціна |
|---|---|
| 8+ | 57.68 грн |
| 14+ | 30.49 грн |
| 25+ | 25.38 грн |
| WMM180N03TS |
Виробник: WAYON
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 30V; 180A; Idm: 720A; 181W; TO263
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 30V
Drain current: 180A
Pulsed drain current: 720A
Power dissipation: 181W
Case: TO263
Gate-source voltage: ±20V
On-state resistance: 3.5mΩ
Mounting: SMD
Gate charge: 32nC
Kind of package: reel; tape
Kind of channel: enhancement
кількість в упаковці: 1 шт
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 30V; 180A; Idm: 720A; 181W; TO263
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 30V
Drain current: 180A
Pulsed drain current: 720A
Power dissipation: 181W
Case: TO263
Gate-source voltage: ±20V
On-state resistance: 3.5mΩ
Mounting: SMD
Gate charge: 32nC
Kind of package: reel; tape
Kind of channel: enhancement
кількість в упаковці: 1 шт
на замовлення 76 шт:
термін постачання 7-14 дні (днів)| Кількість | Ціна |
|---|---|
| 5+ | 69.21 грн |
| 9+ | 37.99 грн |
| 25+ | 30.45 грн |
| 100+ | 27.59 грн |
| WMM18N65EM |
Виробник: WAYON
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; WMOS™ EM; unipolar; 650V; 8.6A; Idm: 43A; 125W
Type of transistor: N-MOSFET
Technology: WMOS™ EM
Polarisation: unipolar
Drain-source voltage: 650V
Drain current: 8.6A
Pulsed drain current: 43A
Power dissipation: 125W
Case: TO263
Gate-source voltage: ±30V
On-state resistance: 0.28Ω
Mounting: SMD
Gate charge: 26nC
Kind of package: reel; tape
Kind of channel: enhancement
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; WMOS™ EM; unipolar; 650V; 8.6A; Idm: 43A; 125W
Type of transistor: N-MOSFET
Technology: WMOS™ EM
Polarisation: unipolar
Drain-source voltage: 650V
Drain current: 8.6A
Pulsed drain current: 43A
Power dissipation: 125W
Case: TO263
Gate-source voltage: ±30V
On-state resistance: 0.28Ω
Mounting: SMD
Gate charge: 26nC
Kind of package: reel; tape
Kind of channel: enhancement
товару немає в наявності
В кошику
од. на суму грн.
| WMM190N03TS |
Виробник: WAYON
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 30V; 190A; Idm: 760A; 192W; TO263
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 30V
Case: TO263
Gate-source voltage: ±20V
On-state resistance: 2.6mΩ
Mounting: SMD
Kind of package: reel; tape
Kind of channel: enhancement
Power dissipation: 192W
Drain current: 190A
Pulsed drain current: 760A
Gate charge: 0.1µC
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 30V; 190A; Idm: 760A; 192W; TO263
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 30V
Case: TO263
Gate-source voltage: ±20V
On-state resistance: 2.6mΩ
Mounting: SMD
Kind of package: reel; tape
Kind of channel: enhancement
Power dissipation: 192W
Drain current: 190A
Pulsed drain current: 760A
Gate charge: 0.1µC
на замовлення 79 шт:
термін постачання 21-30 дні (днів)| Кількість | Ціна |
|---|---|
| 9+ | 52.35 грн |
| 14+ | 31.31 грн |
| 25+ | 26.20 грн |
| WMM190N03TS |
Виробник: WAYON
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 30V; 190A; Idm: 760A; 192W; TO263
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 30V
Case: TO263
Gate-source voltage: ±20V
On-state resistance: 2.6mΩ
Mounting: SMD
Kind of package: reel; tape
Kind of channel: enhancement
Power dissipation: 192W
Drain current: 190A
Pulsed drain current: 760A
Gate charge: 0.1µC
кількість в упаковці: 1 шт
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 30V; 190A; Idm: 760A; 192W; TO263
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 30V
Case: TO263
Gate-source voltage: ±20V
On-state resistance: 2.6mΩ
Mounting: SMD
Kind of package: reel; tape
Kind of channel: enhancement
Power dissipation: 192W
Drain current: 190A
Pulsed drain current: 760A
Gate charge: 0.1µC
кількість в упаковці: 1 шт
на замовлення 79 шт:
термін постачання 7-14 дні (днів)| Кількість | Ціна |
|---|---|
| 6+ | 62.82 грн |
| 8+ | 39.02 грн |
| 25+ | 31.44 грн |
| 100+ | 28.28 грн |
| 800+ | 27.69 грн |
| WMM20N20JN |
Виробник: WAYON
WMM20N20JN-CYG SMD N channel transistors
WMM20N20JN-CYG SMD N channel transistors
на замовлення 590 шт:
термін постачання 7-14 дні (днів)| Кількість | Ціна |
|---|---|
| 5+ | 69.11 грн |
| 41+ | 28.87 грн |
| 112+ | 27.29 грн |
| WMM20N60C2 |
Виробник: WAYON
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; WMOS™ C2; unipolar; 600V; 15A; 86W; TO263
Type of transistor: N-MOSFET
Technology: WMOS™ C2
Polarisation: unipolar
Drain-source voltage: 600V
Drain current: 15A
Power dissipation: 86W
Case: TO263
Gate-source voltage: ±30V
On-state resistance: 0.3Ω
Mounting: SMD
Kind of package: reel; tape
Kind of channel: enhancement
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; WMOS™ C2; unipolar; 600V; 15A; 86W; TO263
Type of transistor: N-MOSFET
Technology: WMOS™ C2
Polarisation: unipolar
Drain-source voltage: 600V
Drain current: 15A
Power dissipation: 86W
Case: TO263
Gate-source voltage: ±30V
On-state resistance: 0.3Ω
Mounting: SMD
Kind of package: reel; tape
Kind of channel: enhancement
товару немає в наявності
В кошику
од. на суму грн.
| WMM220N20HG3 |
Виробник: WAYON
WMM220N20HG3-CYG SMD N channel transistors
WMM220N20HG3-CYG SMD N channel transistors
на замовлення 11 шт:
термін постачання 7-14 дні (днів)| Кількість | Ціна |
|---|---|
| 2+ | 298.15 грн |
| 6+ | 200.72 грн |
| 17+ | 189.84 грн |
| WMM240P10HG4 |
Виробник: WAYON
WMM240P10HG4-CYG SMD P channel transistors
WMM240P10HG4-CYG SMD P channel transistors
на замовлення 47 шт:
термін постачання 7-14 дні (днів)| Кількість | Ціна |
|---|---|
| 4+ | 93.70 грн |
| 19+ | 63.28 грн |
| 51+ | 59.33 грн |
| WMM25N80M3 |
![]() |
Виробник: WAYON
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; WMOS™ M3; unipolar; 800V; 21A; 250W; TO263
Type of transistor: N-MOSFET
Technology: WMOS™ M3
Polarisation: unipolar
Drain-source voltage: 800V
Drain current: 21A
Power dissipation: 250W
Case: TO263
Gate-source voltage: ±30V
On-state resistance: 0.26Ω
Mounting: SMD
Kind of package: reel; tape
Kind of channel: enhancement
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; WMOS™ M3; unipolar; 800V; 21A; 250W; TO263
Type of transistor: N-MOSFET
Technology: WMOS™ M3
Polarisation: unipolar
Drain-source voltage: 800V
Drain current: 21A
Power dissipation: 250W
Case: TO263
Gate-source voltage: ±30V
On-state resistance: 0.26Ω
Mounting: SMD
Kind of package: reel; tape
Kind of channel: enhancement
на замовлення 359 шт:
термін постачання 21-30 дні (днів)| Кількість | Ціна |
|---|---|
| 3+ | 172.15 грн |
| 10+ | 152.43 грн |
| 100+ | 136.78 грн |
| 250+ | 131.01 грн |
| WMM25N80M3 |
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Виробник: WAYON
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; WMOS™ M3; unipolar; 800V; 21A; 250W; TO263
Type of transistor: N-MOSFET
Technology: WMOS™ M3
Polarisation: unipolar
Drain-source voltage: 800V
Drain current: 21A
Power dissipation: 250W
Case: TO263
Gate-source voltage: ±30V
On-state resistance: 0.26Ω
Mounting: SMD
Kind of package: reel; tape
Kind of channel: enhancement
кількість в упаковці: 1 шт
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; WMOS™ M3; unipolar; 800V; 21A; 250W; TO263
Type of transistor: N-MOSFET
Technology: WMOS™ M3
Polarisation: unipolar
Drain-source voltage: 800V
Drain current: 21A
Power dissipation: 250W
Case: TO263
Gate-source voltage: ±30V
On-state resistance: 0.26Ω
Mounting: SMD
Kind of package: reel; tape
Kind of channel: enhancement
кількість в упаковці: 1 шт
на замовлення 359 шт:
термін постачання 7-14 дні (днів)| Кількість | Ціна |
|---|---|
| 2+ | 206.58 грн |
| 10+ | 189.96 грн |
| 100+ | 164.13 грн |
| 250+ | 157.21 грн |
| WMM26N60C4 |
Виробник: WAYON
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; WMOS™ C4; unipolar; 600V; 10.5A; Idm: 40A
Type of transistor: N-MOSFET
Technology: WMOS™ C4
Polarisation: unipolar
Drain-source voltage: 600V
Drain current: 10.5A
Pulsed drain current: 40A
Power dissipation: 135W
Case: TO263
Gate-source voltage: ±30V
On-state resistance: 0.19Ω
Mounting: SMD
Gate charge: 22.1nC
Kind of package: reel; tape
Kind of channel: enhancement
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; WMOS™ C4; unipolar; 600V; 10.5A; Idm: 40A
Type of transistor: N-MOSFET
Technology: WMOS™ C4
Polarisation: unipolar
Drain-source voltage: 600V
Drain current: 10.5A
Pulsed drain current: 40A
Power dissipation: 135W
Case: TO263
Gate-source voltage: ±30V
On-state resistance: 0.19Ω
Mounting: SMD
Gate charge: 22.1nC
Kind of package: reel; tape
Kind of channel: enhancement
на замовлення 780 шт:
термін постачання 21-30 дні (днів)| Кількість | Ціна |
|---|---|
| 4+ | 117.00 грн |
| 10+ | 98.88 грн |
| 25+ | 88.99 грн |
| 100+ | 81.57 грн |
| 250+ | 78.28 грн |
| 500+ | 74.16 грн |
| WMM26N60C4 |
Виробник: WAYON
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; WMOS™ C4; unipolar; 600V; 10.5A; Idm: 40A
Type of transistor: N-MOSFET
Technology: WMOS™ C4
Polarisation: unipolar
Drain-source voltage: 600V
Drain current: 10.5A
Pulsed drain current: 40A
Power dissipation: 135W
Case: TO263
Gate-source voltage: ±30V
On-state resistance: 0.19Ω
Mounting: SMD
Gate charge: 22.1nC
Kind of package: reel; tape
Kind of channel: enhancement
кількість в упаковці: 1 шт
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; WMOS™ C4; unipolar; 600V; 10.5A; Idm: 40A
Type of transistor: N-MOSFET
Technology: WMOS™ C4
Polarisation: unipolar
Drain-source voltage: 600V
Drain current: 10.5A
Pulsed drain current: 40A
Power dissipation: 135W
Case: TO263
Gate-source voltage: ±30V
On-state resistance: 0.19Ω
Mounting: SMD
Gate charge: 22.1nC
Kind of package: reel; tape
Kind of channel: enhancement
кількість в упаковці: 1 шт
на замовлення 780 шт:
термін постачання 7-14 дні (днів)| Кількість | Ціна |
|---|---|
| 2+ | 169.31 грн |
| 3+ | 145.80 грн |
| 10+ | 118.65 грн |
| 25+ | 106.79 грн |
| 100+ | 97.89 грн |
| 250+ | 93.93 грн |
| 500+ | 88.99 грн |
| WMM26N60F2 |
Виробник: WAYON
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; WMOS™ F2; unipolar; 600V; 10.5A; Idm: 40A
Type of transistor: N-MOSFET
Technology: WMOS™ F2
Polarisation: unipolar
Drain-source voltage: 600V
Drain current: 10.5A
Pulsed drain current: 40A
Power dissipation: 135W
Case: TO263
Gate-source voltage: ±30V
On-state resistance: 0.21Ω
Mounting: SMD
Gate charge: 22.1nC
Kind of package: reel; tape
Kind of channel: enhancement
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; WMOS™ F2; unipolar; 600V; 10.5A; Idm: 40A
Type of transistor: N-MOSFET
Technology: WMOS™ F2
Polarisation: unipolar
Drain-source voltage: 600V
Drain current: 10.5A
Pulsed drain current: 40A
Power dissipation: 135W
Case: TO263
Gate-source voltage: ±30V
On-state resistance: 0.21Ω
Mounting: SMD
Gate charge: 22.1nC
Kind of package: reel; tape
Kind of channel: enhancement
на замовлення 796 шт:
термін постачання 21-30 дні (днів)| Кількість | Ціна |
|---|---|
| 4+ | 111.24 грн |
| 10+ | 93.11 грн |
| 25+ | 84.04 грн |
| 100+ | 82.40 грн |
| WMM26N60F2 |
Виробник: WAYON
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; WMOS™ F2; unipolar; 600V; 10.5A; Idm: 40A
Type of transistor: N-MOSFET
Technology: WMOS™ F2
Polarisation: unipolar
Drain-source voltage: 600V
Drain current: 10.5A
Pulsed drain current: 40A
Power dissipation: 135W
Case: TO263
Gate-source voltage: ±30V
On-state resistance: 0.21Ω
Mounting: SMD
Gate charge: 22.1nC
Kind of package: reel; tape
Kind of channel: enhancement
кількість в упаковці: 1 шт
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; WMOS™ F2; unipolar; 600V; 10.5A; Idm: 40A
Type of transistor: N-MOSFET
Technology: WMOS™ F2
Polarisation: unipolar
Drain-source voltage: 600V
Drain current: 10.5A
Pulsed drain current: 40A
Power dissipation: 135W
Case: TO263
Gate-source voltage: ±30V
On-state resistance: 0.21Ω
Mounting: SMD
Gate charge: 22.1nC
Kind of package: reel; tape
Kind of channel: enhancement
кількість в упаковці: 1 шт
на замовлення 796 шт:
термін постачання 7-14 дні (днів)| Кількість | Ціна |
|---|---|
| 2+ | 160.79 грн |
| 3+ | 138.62 грн |
| 10+ | 111.73 грн |
| 25+ | 100.85 грн |
| 100+ | 98.88 грн |
| WMM26N60FD |
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Виробник: WAYON
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; WMOS™ FD; unipolar; 600V; 20A; 147W; TO263
Type of transistor: N-MOSFET
Technology: WMOS™ FD
Polarisation: unipolar
Drain-source voltage: 600V
Drain current: 20A
Power dissipation: 147W
Case: TO263
Gate-source voltage: ±30V
On-state resistance: 0.2Ω
Mounting: SMD
Kind of package: reel; tape
Kind of channel: enhancement
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; WMOS™ FD; unipolar; 600V; 20A; 147W; TO263
Type of transistor: N-MOSFET
Technology: WMOS™ FD
Polarisation: unipolar
Drain-source voltage: 600V
Drain current: 20A
Power dissipation: 147W
Case: TO263
Gate-source voltage: ±30V
On-state resistance: 0.2Ω
Mounting: SMD
Kind of package: reel; tape
Kind of channel: enhancement
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В кошику
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| WMM26N65FD |
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Виробник: WAYON
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; WMOS™ FD; unipolar; 650V; 20A; 147W; TO263
Type of transistor: N-MOSFET
Technology: WMOS™ FD
Polarisation: unipolar
Drain-source voltage: 650V
Drain current: 20A
Power dissipation: 147W
Case: TO263
Gate-source voltage: ±30V
On-state resistance: 0.2Ω
Mounting: SMD
Kind of package: reel; tape
Kind of channel: enhancement
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; WMOS™ FD; unipolar; 650V; 20A; 147W; TO263
Type of transistor: N-MOSFET
Technology: WMOS™ FD
Polarisation: unipolar
Drain-source voltage: 650V
Drain current: 20A
Power dissipation: 147W
Case: TO263
Gate-source voltage: ±30V
On-state resistance: 0.2Ω
Mounting: SMD
Kind of package: reel; tape
Kind of channel: enhancement
товару немає в наявності
В кошику
од. на суму грн.
| WMM26N65SR |
Виробник: WAYON
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; WMOS™ SR; unipolar; 650V; 12A; Idm: 50A; 147W
Type of transistor: N-MOSFET
Technology: WMOS™ SR
Polarisation: unipolar
Drain-source voltage: 650V
Drain current: 12A
Pulsed drain current: 50A
Power dissipation: 147W
Case: TO263
Gate-source voltage: ±30V
On-state resistance: 198mΩ
Mounting: SMD
Gate charge: 34.7nC
Kind of package: reel; tape
Kind of channel: enhancement
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; WMOS™ SR; unipolar; 650V; 12A; Idm: 50A; 147W
Type of transistor: N-MOSFET
Technology: WMOS™ SR
Polarisation: unipolar
Drain-source voltage: 650V
Drain current: 12A
Pulsed drain current: 50A
Power dissipation: 147W
Case: TO263
Gate-source voltage: ±30V
On-state resistance: 198mΩ
Mounting: SMD
Gate charge: 34.7nC
Kind of package: reel; tape
Kind of channel: enhancement
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В кошику
од. на суму грн.
| WMM28N60C4 |
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Виробник: WAYON
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; WMOS™ C4; unipolar; 600V; 13A; Idm: 65A; 160W
Type of transistor: N-MOSFET
Technology: WMOS™ C4
Polarisation: unipolar
Drain-source voltage: 600V
Drain current: 13A
Pulsed drain current: 65A
Power dissipation: 160W
Case: TO263
Gate-source voltage: ±30V
On-state resistance: 0.16Ω
Mounting: SMD
Gate charge: 27.3nC
Kind of package: reel; tape
Kind of channel: enhancement
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; WMOS™ C4; unipolar; 600V; 13A; Idm: 65A; 160W
Type of transistor: N-MOSFET
Technology: WMOS™ C4
Polarisation: unipolar
Drain-source voltage: 600V
Drain current: 13A
Pulsed drain current: 65A
Power dissipation: 160W
Case: TO263
Gate-source voltage: ±30V
On-state resistance: 0.16Ω
Mounting: SMD
Gate charge: 27.3nC
Kind of package: reel; tape
Kind of channel: enhancement
на замовлення 800 шт:
термін постачання 21-30 дні (днів)| Кількість | Ціна |
|---|---|
| 4+ | 118.02 грн |
| 5+ | 98.05 грн |
| 10+ | 90.64 грн |
| 25+ | 86.52 грн |
| 100+ | 84.87 грн |
| WMM28N60C4 |
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Виробник: WAYON
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; WMOS™ C4; unipolar; 600V; 13A; Idm: 65A; 160W
Type of transistor: N-MOSFET
Technology: WMOS™ C4
Polarisation: unipolar
Drain-source voltage: 600V
Drain current: 13A
Pulsed drain current: 65A
Power dissipation: 160W
Case: TO263
Gate-source voltage: ±30V
On-state resistance: 0.16Ω
Mounting: SMD
Gate charge: 27.3nC
Kind of package: reel; tape
Kind of channel: enhancement
кількість в упаковці: 1 шт
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; WMOS™ C4; unipolar; 600V; 13A; Idm: 65A; 160W
Type of transistor: N-MOSFET
Technology: WMOS™ C4
Polarisation: unipolar
Drain-source voltage: 600V
Drain current: 13A
Pulsed drain current: 65A
Power dissipation: 160W
Case: TO263
Gate-source voltage: ±30V
On-state resistance: 0.16Ω
Mounting: SMD
Gate charge: 27.3nC
Kind of package: reel; tape
Kind of channel: enhancement
кількість в упаковці: 1 шт
на замовлення 800 шт:
термін постачання 7-14 дні (днів)| Кількість | Ціна |
|---|---|
| 3+ | 122.19 грн |
| 10+ | 108.76 грн |
| 25+ | 103.82 грн |
| 100+ | 101.84 грн |
| WMM340N20HG2 |
Виробник: WAYON
WMM340N20HG2-CYG SMD N channel transistors
WMM340N20HG2-CYG SMD N channel transistors
на замовлення 38 шт:
термін постачання 7-14 дні (днів)| Кількість | Ціна |
|---|---|
| 3+ | 141.62 грн |
| 13+ | 93.93 грн |
| 35+ | 88.99 грн |
| WMM36N60C4 |
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Виробник: WAYON
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; WMOS™ C4; unipolar; 600V; 20A; Idm: 100A; 277W
Type of transistor: N-MOSFET
Technology: WMOS™ C4
Polarisation: unipolar
Drain-source voltage: 600V
Drain current: 20A
Pulsed drain current: 100A
Power dissipation: 277W
Case: TO263
Gate-source voltage: ±30V
On-state resistance: 97mΩ
Mounting: SMD
Gate charge: 46nC
Kind of package: reel; tape
Kind of channel: enhancement
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; WMOS™ C4; unipolar; 600V; 20A; Idm: 100A; 277W
Type of transistor: N-MOSFET
Technology: WMOS™ C4
Polarisation: unipolar
Drain-source voltage: 600V
Drain current: 20A
Pulsed drain current: 100A
Power dissipation: 277W
Case: TO263
Gate-source voltage: ±30V
On-state resistance: 97mΩ
Mounting: SMD
Gate charge: 46nC
Kind of package: reel; tape
Kind of channel: enhancement
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од. на суму грн.
| WMM36N60F2 |
Виробник: WAYON
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; WMOS™ F2; unipolar; 600V; 20A; Idm: 100A; 277W
Type of transistor: N-MOSFET
Technology: WMOS™ F2
Polarisation: unipolar
Drain-source voltage: 600V
Drain current: 20A
Power dissipation: 277W
Case: TO263
Gate-source voltage: ±30V
On-state resistance: 0.11Ω
Mounting: SMD
Kind of package: reel; tape
Kind of channel: enhancement
Pulsed drain current: 100A
Gate charge: 46nC
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; WMOS™ F2; unipolar; 600V; 20A; Idm: 100A; 277W
Type of transistor: N-MOSFET
Technology: WMOS™ F2
Polarisation: unipolar
Drain-source voltage: 600V
Drain current: 20A
Power dissipation: 277W
Case: TO263
Gate-source voltage: ±30V
On-state resistance: 0.11Ω
Mounting: SMD
Kind of package: reel; tape
Kind of channel: enhancement
Pulsed drain current: 100A
Gate charge: 46nC
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од. на суму грн.
| WMM36N65C4 |
Виробник: WAYON
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; WMOS™ C4; unipolar; 650V; 20A; Idm: 100A; 277W
Type of transistor: N-MOSFET
Technology: WMOS™ C4
Polarisation: unipolar
Drain-source voltage: 650V
Drain current: 20A
Pulsed drain current: 100A
Power dissipation: 277W
Case: TO263
Gate-source voltage: ±30V
On-state resistance: 97mΩ
Mounting: SMD
Gate charge: 46nC
Kind of package: reel; tape
Kind of channel: enhancement
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; WMOS™ C4; unipolar; 650V; 20A; Idm: 100A; 277W
Type of transistor: N-MOSFET
Technology: WMOS™ C4
Polarisation: unipolar
Drain-source voltage: 650V
Drain current: 20A
Pulsed drain current: 100A
Power dissipation: 277W
Case: TO263
Gate-source voltage: ±30V
On-state resistance: 97mΩ
Mounting: SMD
Gate charge: 46nC
Kind of package: reel; tape
Kind of channel: enhancement
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од. на суму грн.
| WMM38N60C2 |
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Виробник: WAYON
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; WMOS™ C2; unipolar; 600V; 38A; 277W; TO263
Type of transistor: N-MOSFET
Technology: WMOS™ C2
Polarisation: unipolar
Drain-source voltage: 600V
Drain current: 38A
Power dissipation: 277W
Case: TO263
Gate-source voltage: ±30V
On-state resistance: 99mΩ
Mounting: SMD
Kind of package: reel; tape
Kind of channel: enhancement
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; WMOS™ C2; unipolar; 600V; 38A; 277W; TO263
Type of transistor: N-MOSFET
Technology: WMOS™ C2
Polarisation: unipolar
Drain-source voltage: 600V
Drain current: 38A
Power dissipation: 277W
Case: TO263
Gate-source voltage: ±30V
On-state resistance: 99mΩ
Mounting: SMD
Kind of package: reel; tape
Kind of channel: enhancement
на замовлення 361 шт:
термін постачання 21-30 дні (днів)| Кількість | Ціна |
|---|---|
| 3+ | 177.47 грн |
| 10+ | 152.43 грн |
| 50+ | 145.84 грн |
| 100+ | 136.78 грн |
| WMM38N60C2 |
![]() |
Виробник: WAYON
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; WMOS™ C2; unipolar; 600V; 38A; 277W; TO263
Type of transistor: N-MOSFET
Technology: WMOS™ C2
Polarisation: unipolar
Drain-source voltage: 600V
Drain current: 38A
Power dissipation: 277W
Case: TO263
Gate-source voltage: ±30V
On-state resistance: 99mΩ
Mounting: SMD
Kind of package: reel; tape
Kind of channel: enhancement
кількість в упаковці: 1 шт
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; WMOS™ C2; unipolar; 600V; 38A; 277W; TO263
Type of transistor: N-MOSFET
Technology: WMOS™ C2
Polarisation: unipolar
Drain-source voltage: 600V
Drain current: 38A
Power dissipation: 277W
Case: TO263
Gate-source voltage: ±30V
On-state resistance: 99mΩ
Mounting: SMD
Kind of package: reel; tape
Kind of channel: enhancement
кількість в упаковці: 1 шт
на замовлення 361 шт:
термін постачання 7-14 дні (днів)| Кількість | Ціна |
|---|---|
| 2+ | 212.96 грн |
| 10+ | 189.96 грн |
| 50+ | 175.01 грн |
| 100+ | 164.13 грн |
| WMM4N90D1 |
Виробник: WAYON
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; WMOS™ D1; unipolar; 900V; 4A; Idm: 16A; 65W
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 900V
Drain current: 4A
Case: TO263
Gate-source voltage: ±30V
On-state resistance: 2.9Ω
Mounting: SMD
Kind of package: reel; tape
Kind of channel: enhancement
Technology: WMOS™ D1
Pulsed drain current: 16A
Power dissipation: 65W
Gate charge: 26nC
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; WMOS™ D1; unipolar; 900V; 4A; Idm: 16A; 65W
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 900V
Drain current: 4A
Case: TO263
Gate-source voltage: ±30V
On-state resistance: 2.9Ω
Mounting: SMD
Kind of package: reel; tape
Kind of channel: enhancement
Technology: WMOS™ D1
Pulsed drain current: 16A
Power dissipation: 65W
Gate charge: 26nC
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| WMM4N90D1B |
Виробник: WAYON
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; WMOS™ D1; unipolar; 900V; 4A; Idm: 16A; 63W
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 900V
Drain current: 4A
Case: TO263
Gate-source voltage: ±30V
On-state resistance: 1.85Ω
Mounting: SMD
Kind of package: reel; tape
Kind of channel: enhancement
Technology: WMOS™ D1
Pulsed drain current: 16A
Power dissipation: 63W
Gate charge: 34nC
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; WMOS™ D1; unipolar; 900V; 4A; Idm: 16A; 63W
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 900V
Drain current: 4A
Case: TO263
Gate-source voltage: ±30V
On-state resistance: 1.85Ω
Mounting: SMD
Kind of package: reel; tape
Kind of channel: enhancement
Technology: WMOS™ D1
Pulsed drain current: 16A
Power dissipation: 63W
Gate charge: 34nC
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од. на суму грн.
| WMM50P04T1 |
Виробник: WAYON
WMM50P04T1-CYG SMD P channel transistors
WMM50P04T1-CYG SMD P channel transistors
на замовлення 56 шт:
термін постачання 7-14 дні (днів)| Кількість | Ціна |
|---|---|
| 5+ | 78.69 грн |
| 39+ | 30.16 грн |
| 107+ | 28.48 грн |
| WMM6N90D1 |
Виробник: WAYON
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; WMOS™ D1; unipolar; 900V; 6A; Idm: 24A; 100W
Type of transistor: N-MOSFET
Technology: WMOS™ D1
Polarisation: unipolar
Drain-source voltage: 900V
Drain current: 6A
Pulsed drain current: 24A
Power dissipation: 100W
Case: TO263
Gate-source voltage: ±30V
On-state resistance: 1.7Ω
Mounting: SMD
Gate charge: 86.2nC
Kind of package: reel; tape
Kind of channel: enhancement
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; WMOS™ D1; unipolar; 900V; 6A; Idm: 24A; 100W
Type of transistor: N-MOSFET
Technology: WMOS™ D1
Polarisation: unipolar
Drain-source voltage: 900V
Drain current: 6A
Pulsed drain current: 24A
Power dissipation: 100W
Case: TO263
Gate-source voltage: ±30V
On-state resistance: 1.7Ω
Mounting: SMD
Gate charge: 86.2nC
Kind of package: reel; tape
Kind of channel: enhancement
товару немає в наявності
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од. на суму грн.
| WMM6N90D1B |
Виробник: WAYON
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 900V; 6A; TO263
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 900V
Drain current: 6A
Case: TO263
Gate-source voltage: ±30V
On-state resistance: 2.3Ω
Mounting: SMD
Kind of package: reel; tape
Kind of channel: enhancement
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 900V; 6A; TO263
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 900V
Drain current: 6A
Case: TO263
Gate-source voltage: ±30V
On-state resistance: 2.3Ω
Mounting: SMD
Kind of package: reel; tape
Kind of channel: enhancement
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В кошику
од. на суму грн.
| WMM80N08TS |
Виробник: WAYON
WMM80N08TS-CYG SMD N channel transistors
WMM80N08TS-CYG SMD N channel transistors
на замовлення 72 шт:
термін постачання 7-14 дні (днів)| Кількість | Ціна |
|---|---|
| 4+ | 89.02 грн |
| 25+ | 47.76 грн |
| 68+ | 45.19 грн |
| WMM80P04TS |
Виробник: WAYON
WMM80P04TS-CYG SMD P channel transistors
WMM80P04TS-CYG SMD P channel transistors
на замовлення 35 шт:
термін постачання 7-14 дні (днів)| Кількість | Ціна |
|---|---|
| 4+ | 86.57 грн |
| 27+ | 44.49 грн |
| 73+ | 42.12 грн |






