Продукція > INFINEON TECHNOLOGIES > Всі товари виробника INFINEON TECHNOLOGIES (117864) > Сторінка 164 з 1965

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TLE7240SL TLE7240SL Infineon Technologies TLE7240SL_Rev1.4_Oct2011.pdf Description: IC PWR DRIVER N-CHAN 1:2 24SSOP
Packaging: Tape & Reel (TR)
Package / Case: 24-SSOP (0.154", 3.90mm Width)
Output Type: N-Channel
Mounting Type: Surface Mount
Number of Outputs: 8
Interface: SPI
Switch Type: General Purpose
Operating Temperature: -40°C ~ 150°C (TJ)
Output Configuration: Low Side
Rds On (Typ): 1.5Ohm
Voltage - Load: 4.5V ~ 5.5V
Voltage - Supply (Vcc/Vdd): 3V ~ 5.5V
Current - Output (Max): 210mA
Ratio - Input:Output: 1:2
Supplier Device Package: PG-SSOP-24-7
Fault Protection: Open Load Detect, Over Temperature
Part Status: Obsolete
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TLE7243SLXUMA2 TLE7243SLXUMA2 Infineon Technologies TLE7243SL.pdf Description: IC PWR DRIVER N-CHAN 1:2 24SSOP
Packaging: Tape & Reel (TR)
Package / Case: 24-SSOP (0.154", 3.90mm Width)
Output Type: N-Channel
Mounting Type: Surface Mount
Number of Outputs: 8
Interface: SPI
Switch Type: General Purpose
Operating Temperature: -40°C ~ 150°C (TJ)
Output Configuration: Low Side
Rds On (Typ): 1.2Ohm
Voltage - Load: 4.5V ~ 5.5V
Voltage - Supply (Vcc/Vdd): 3V ~ 5.5V
Current - Output (Max): 260mA
Ratio - Input:Output: 1:2
Supplier Device Package: PG-SSOP-24-7
Fault Protection: Open Load Detect, Over Temperature
Part Status: Obsolete
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TLE7244SL TLE7244SL Infineon Technologies TLE7244SL_v1.3_Oct2011.pdf Description: IC PWR DRIVER N-CHAN 1:2 24SSOP
Packaging: Tape & Reel (TR)
Package / Case: 24-SSOP (0.154", 3.90mm Width)
Output Type: N-Channel
Mounting Type: Surface Mount
Number of Outputs: 8
Interface: SPI
Switch Type: Relay, Solenoid Driver
Operating Temperature: -40°C ~ 150°C (TJ)
Output Configuration: Low Side
Rds On (Typ): 800mOhm
Voltage - Load: 4.5V ~ 5.5V
Voltage - Supply (Vcc/Vdd): 3V ~ 5.5V
Current - Output (Max): 290mA
Ratio - Input:Output: 1:2
Supplier Device Package: PG-SSOP-24-7
Fault Protection: Open Load Detect, Over Temperature
Part Status: Obsolete
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TLE7272-2E TLE7272-2E Infineon Technologies Infineon-TLE7272_2-DS-v01_00-en.pdf?folderId=db3a304318f3fe290118f5a433570040&fileId=db3a304327b89750012801509d8437e2&ack=t Description: IC REG LDO 5V 0.3A 14SSOP
на замовлення 2500 шт:
термін постачання 21-31 дні (днів)
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TLE72732EV50XUMA1 TLE72732EV50XUMA1 Infineon Technologies Infineon-TLE7273-2-DS-v01_21-EN.pdf?fileId=5546d46259d9a4bf0159f9d710123eee Description: IC REG LIN 5V 180MA SSOP-14-EP
Packaging: Tape & Reel (TR)
Package / Case: 14-LSSOP (0.154", 3.90mm Width) Exposed Pad
Output Type: Fixed
Mounting Type: Surface Mount
Current - Output: 180mA
Operating Temperature: -40°C ~ 150°C
Output Configuration: Positive
Current - Quiescent (Iq): 36 µA
Voltage - Input (Max): 45V
Number of Regulators: 1
Supplier Device Package: PG-SSOP-14-EP
Voltage - Output (Min/Fixed): 5V
Control Features: Enable, Reset, Watchdog
Part Status: Active
PSRR: 60dB (100Hz)
Voltage Dropout (Max): 0.5V @ 180mA
Protection Features: Over Current, Over Temperature, Short Circuit
Grade: Automotive
Qualification: AEC-Q100
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TLE72732GV26XUMA1 TLE72732GV26XUMA1 Infineon Technologies Infineon-TLE7273-2-DS-v01_21-EN.pdf?fileId=5546d46259d9a4bf0159f9d710123eee Description: IC REG LIN 2.6V 180MA PG-DSO-14
Packaging: Tape & Reel (TR)
Package / Case: 14-SOIC (0.154", 3.90mm Width)
Output Type: Fixed
Mounting Type: Surface Mount
Current - Output: 180mA
Operating Temperature: -40°C ~ 150°C
Output Configuration: Positive
Current - Quiescent (Iq): 36 µA
Voltage - Input (Max): 45V
Number of Regulators: 1
Supplier Device Package: PG-DSO-14
Voltage - Output (Min/Fixed): 2.6V
Control Features: Enable, Reset, Watchdog
Grade: Automotive
PSRR: 60dB (100Hz)
Voltage Dropout (Max): 0.5V @ 180mA
Protection Features: Over Current, Over Temperature, Short Circuit
Qualification: AEC-Q100
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TLE72782EV50XUMA1 TLE72782EV50XUMA1 Infineon Technologies TLE7278-2.pdf Description: IC REG LIN 5V 180MA SSOP-14-EP
Packaging: Tape & Reel (TR)
Package / Case: 14-LSSOP (0.154", 3.90mm Width) Exposed Pad
Output Type: Fixed
Mounting Type: Surface Mount
Current - Output: 180mA
Operating Temperature: -40°C ~ 150°C
Output Configuration: Positive
Current - Quiescent (Iq): 36 µA
Voltage - Input (Max): 45V
Number of Regulators: 1
Supplier Device Package: PG-SSOP-14-EP
Voltage - Output (Min/Fixed): 5V
Control Features: Enable, Reset, Watchdog
Grade: Automotive
PSRR: 60dB (100Hz)
Voltage Dropout (Max): 0.5V @ 180mA
Protection Features: Over Current, Over Temperature, Short Circuit
Qualification: AEC-Q100
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TLE72782GV26XUMA1 TLE72782GV26XUMA1 Infineon Technologies Infineon-TLE7278_2-DS-v01_02-en.pdf?folderId=db3a304318f3fe290118f5a433570040&fileId=db3a30431be39b97011be5492aa10094&ack=t Description: IC REG LDO 2.6V 0.18A 14DSO
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TLE72792EV50XUMA1 TLE72792EV50XUMA1 Infineon Technologies TLE7279-2.pdf Description: IC REG LIN 5V 180MA SSOP-14-EP
Packaging: Tape & Reel (TR)
Package / Case: 14-LSSOP (0.154", 3.90mm Width) Exposed Pad
Output Type: Fixed
Mounting Type: Surface Mount
Current - Output: 180mA
Operating Temperature: -40°C ~ 150°C
Output Configuration: Positive
Current - Quiescent (Iq): 36 µA
Voltage - Input (Max): 45V
Number of Regulators: 1
Supplier Device Package: PG-SSOP-14-EP
Voltage - Output (Min/Fixed): 5V
Control Features: Enable, Reset
Grade: Automotive
PSRR: 60dB (100Hz)
Voltage Dropout (Max): 0.5V @ 180mA
Protection Features: Over Current, Over Temperature, Short Circuit
Qualification: AEC-Q100
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TLE72792GV26XUMA1 TLE72792GV26XUMA1 Infineon Technologies Infineon-TLE7279_2-DS-v01_02-en.pdf?folderId=db3a304318f3fe290118f5a433570040&fileId=db3a30431be39b97011be54c333b00a0&ack=t Description: IC REG LDO 2.6V 0.18A 14DSO
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TLE7729TXUMA1 TLE7729TXUMA1 Infineon Technologies TLE7729_PB.pdf Description: IC INTERFACE SPECIALIZED 28TSSOP
Packaging: Tape & Reel (TR)
Package / Case: 28-TSSOP (0.173", 4.40mm Width)
Mounting Type: Surface Mount
Interface: SPI Serial
Voltage - Supply: 3.3V, 5V
Supplier Device Package: PG-TSSOP-28
Part Status: Obsolete
Grade: Automotive
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TLE8203EXUMA1 TLE8203EXUMA1 Infineon Technologies Infineon-TLE8203E-DS-v01_00-EN.pdf?fileId=5546d46259d9a4bf015a84d87c5b7568 Description: IC DRV MOTOR MIRROR PWR DSO-36
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TLE8366EV33XUMA1 TLE8366EV33XUMA1 Infineon Technologies Infineon-TLE8366-DS-v01_00-EN.pdf?fileId=5546d46258fc0bc1015969d2def641fa Description: IC REG BUCK 3.3V 1.8A PGDSO-8
Packaging: Tape & Reel (TR)
Package / Case: 8-SOIC (0.154", 3.90mm Width)
Output Type: Fixed
Mounting Type: Surface Mount
Number of Outputs: 1
Function: Step-Down
Current - Output: 1.8A
Operating Temperature: -40°C ~ 150°C (TJ)
Output Configuration: Positive
Frequency - Switching: 370kHz
Voltage - Input (Max): 45V
Topology: Buck
Supplier Device Package: PG-DSO-8
Synchronous Rectifier: No
Voltage - Input (Min): 4.75V
Voltage - Output (Min/Fixed): 3.3V
Part Status: Active
Grade: Automotive
Qualification: AEC-Q100
на замовлення 2500 шт:
термін постачання 21-31 дні (днів)
2500+95.39 грн
Мінімальне замовлення: 2500
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TLE8366EV50XUMA1 TLE8366EV50XUMA1 Infineon Technologies Infineon-TLE8366-DS-v01_00-EN.pdf?fileId=5546d46258fc0bc1015969d2def641fa Description: IC REG BUCK 5V 1.8A PGDSO-8
Packaging: Tape & Reel (TR)
Package / Case: 8-SOIC (0.154", 3.90mm Width)
Output Type: Fixed
Mounting Type: Surface Mount
Number of Outputs: 1
Function: Step-Down
Current - Output: 1.8A
Operating Temperature: -40°C ~ 150°C (TJ)
Output Configuration: Positive
Frequency - Switching: 370kHz
Voltage - Input (Max): 45V
Topology: Buck
Supplier Device Package: PG-DSO-8
Synchronous Rectifier: No
Voltage - Input (Min): 4.75V
Voltage - Output (Min/Fixed): 5V
Part Status: Active
Grade: Automotive
Qualification: AEC-Q100
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TLE8366EVXUMA1 TLE8366EVXUMA1 Infineon Technologies Infineon-TLE8366-DS-v01_00-EN.pdf?fileId=5546d46258fc0bc1015969d2def641fa Description: IC REG BUCK ADJ 1.8A PGDSO-8
Packaging: Tape & Reel (TR)
Package / Case: 8-SOIC (0.154", 3.90mm Width)
Output Type: Adjustable
Mounting Type: Surface Mount
Number of Outputs: 1
Function: Step-Down
Current - Output: 1.8A
Operating Temperature: -40°C ~ 150°C (TJ)
Output Configuration: Positive
Frequency - Switching: 370kHz
Voltage - Input (Max): 45V
Topology: Buck
Supplier Device Package: PG-DSO-8
Synchronous Rectifier: No
Voltage - Output (Max): 16V
Voltage - Input (Min): 4.75V
Voltage - Output (Min/Fixed): 0.6V
Part Status: Active
Grade: Automotive
Qualification: AEC-Q100
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TLE8444SLXUMA1 TLE8444SLXUMA1 Infineon Technologies Infineon-TLE8444SL-DS-v01_01-en.pdf?fileId=db3a30431ff98815012060afb566617a Description: IC MOTOR DRIVER BIPOLAR 24SSOP
Packaging: Tape & Reel (TR)
Package / Case: 24-SSOP (0.154", 3.90mm Width)
Mounting Type: Surface Mount
Function: Driver - Fully Integrated, Control and Power Stage
Current - Output: 1A
Interface: Parallel
Operating Temperature: -40°C ~ 150°C (TJ)
Output Configuration: Half Bridge (4)
Voltage - Supply: 8V ~ 18V
Technology: BiCDMOS
Voltage - Load: 8V ~ 18V
Supplier Device Package: PG-SSOP-24-7
Motor Type - Stepper: Bipolar, Unipolar
Motor Type - AC, DC: Brushed DC
Part Status: Active
Grade: Automotive
на замовлення 20000 шт:
термін постачання 21-31 дні (днів)
2500+106.69 грн
Мінімальне замовлення: 2500
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TLE8458GXUMA1 TLE8458GXUMA1 Infineon Technologies Infineon-TLE8458-DS-v01_00-EN.pdf?fileId=5546d46259d9a4bf015a3d2da4b66071 Description: IC TRANSCEIVER FULL 1/1 DSO-8
Packaging: Tape & Reel (TR)
Package / Case: 8-SOIC (0.154", 3.90mm Width)
Mounting Type: Surface Mount
Type: Transceiver
Operating Temperature: -40°C ~ 150°C
Voltage - Supply: 7V ~ 27V
Number of Drivers/Receivers: 1/1
Data Rate: 20kbps
Protocol: LINbus
Supplier Device Package: PG-DSO-8-16
Duplex: Full
Part Status: Not For New Designs
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TLI4906KHTSA1 TLI4906KHTSA1 Infineon Technologies TLI4906x_DS_Rev1.0.pdf?folderId=db3a30431f848401011facc1c83b4674&fileId=db3a304320d39d590121543b7ddc05c4 Description: MAGNETIC SWITCH UNIPOL SC59
Packaging: Tape & Reel (TR)
Features: Temperature Compensated
Package / Case: TO-236-3, SC-59, SOT-23-3
Output Type: Open Drain
Polarization: South Pole
Mounting Type: Surface Mount
Function: Unipolar Switch
Operating Temperature: -40°C ~ 125°C (TA)
Voltage - Supply: 2.7V ~ 18V
Technology: Hall Effect
Sensing Range: 13.9mT Trip, 4.7mT Release
Current - Output (Max): 20mA
Current - Supply (Max): 6mA
Supplier Device Package: PG-SC59-3
Test Condition: -40°C ~ 125°C
Part Status: Active
Grade: Automotive
Qualification: AEC-Q100
на замовлення 3000 шт:
термін постачання 21-31 дні (днів)
3000+21.29 грн
Мінімальне замовлення: 3000
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TLI49462KHTSA1 TLI49462KHTSA1 Infineon Technologies TLI4946xy_DS_Rev1.0.pdf?folderId=db3a30431f848401011facc1c83b4674&fileId=db3a304320d39d590121543f7e4c05c8 Description: MAGNETIC SWITCH UNIPOLAR SC59
Packaging: Tape & Reel (TR)
Features: Temperature Compensated
Package / Case: TO-236-3, SC-59, SOT-23-3
Output Type: Open Drain
Polarization: South Pole
Mounting Type: Surface Mount
Function: Unipolar Switch
Operating Temperature: -40°C ~ 125°C (TA)
Voltage - Supply: 2.7V ~ 18V
Technology: Hall Effect
Sensing Range: 19.2mT Trip, -19.2mT Release
Current - Output (Max): 20mA
Current - Supply (Max): 6mA
Supplier Device Package: PG-SC59-3
Test Condition: -40°C ~ 125°C
Grade: Automotive
Qualification: AEC-Q100
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TLI49462LHALA1 TLI49462LHALA1 Infineon Technologies TLI4946xy_DS_Rev1.0.pdf?folderId=db3a30431f848401011facc1c83b4674&fileId=db3a304320d39d590121543f7e4c05c8 Description: MAGNETIC SWITCH UNIPOLAR SSO-3-2
Packaging: Tape & Box (TB)
Features: Temperature Compensated
Package / Case: 3-SSIP, SSO-3-02
Output Type: Open Drain
Polarization: South Pole
Mounting Type: Through Hole
Function: Unipolar Switch
Operating Temperature: -40°C ~ 125°C (TA)
Voltage - Supply: 2.7V ~ 18V
Technology: Hall Effect
Sensing Range: 3.5mT Trip, -3.5mT Release
Current - Output (Max): 20mA
Current - Supply (Max): 6mA
Supplier Device Package: PG-SSO-3-2
Test Condition: -40°C ~ 125°C
Grade: Automotive
Qualification: AEC-Q100
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TLI4946KHTSA1 TLI4946KHTSA1 Infineon Technologies TLI4946xy_DS_Rev1.0.pdf?folderId=db3a30431f848401011facc1c83b4674&fileId=db3a304320d39d590121543f7e4c05c8 Description: MAGNETIC SWITCH UNIPOLAR SC59
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TLV4906K TLV4906K Infineon Technologies TLV4906x_DS_Rev1.0.pdf?folderId=db3a30431f848401011facc1c83b4674&fileId=db3a304320d39d590121544295e605cd Description: IC HALL EFFECT SW SC59-3
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TLV4906LHALA1 TLV4906LHALA1 Infineon Technologies dgdl?fileId=db3a30432ea425a4012ec42cfd2b550a Description: MAGNETIC SWITCH UNIPOLAR SSO-3-2
Packaging: Tape & Box (TB)
Features: Temperature Compensated
Package / Case: 3-SSIP, SSO-3-02
Output Type: Open Collector
Polarization: South Pole
Mounting Type: Through Hole
Function: Unipolar Switch
Operating Temperature: -40°C ~ 85°C (TA)
Voltage - Supply: 2.7V ~ 18V
Technology: Hall Effect
Sensing Range: 13.9mT Trip, 4.7mT Release
Current - Output (Max): 20mA
Current - Supply (Max): 6mA
Supplier Device Package: PG-SSO-3-2
Test Condition: -40°C ~ 85°C
Grade: Automotive
Qualification: AEC-Q100
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TLV49462KFTSA1 TLV49462KFTSA1 Infineon Technologies TLV4946xy_Rev1.0.pdf?folderId=db3a30431f848401011facc1c83b4674&fileId=db3a304320d39d5901215443fca305d1 Description: IC HALL EFFECT LATCH SC59-3
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TLV49462LHALA1 TLV49462LHALA1 Infineon Technologies TLV4946xy_Rev1.0.pdf?folderId=db3a30431f848401011facc1c83b4674&fileId=db3a304320d39d5901215443fca305d1 Description: MAGNETIC SWITCH LATCH SSO-3-2
Packaging: Tape & Box (TB)
Features: Temperature Compensated
Package / Case: 3-SSIP, SSO-3-02
Output Type: Open Drain
Polarization: South Pole
Mounting Type: Through Hole
Function: Latch
Operating Temperature: -40°C ~ 85°C (TA)
Voltage - Supply: 2.7V ~ 18V
Technology: Hall Effect
Sensing Range: 3.5mT Trip, -3.5mT Release
Current - Output (Max): 20mA
Current - Supply (Max): 6mA
Supplier Device Package: PG-SSO-3-2
Test Condition: -40°C ~ 85°C
Grade: Automotive
Qualification: AEC-Q100
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TLV4946KFTSA1 TLV4946KFTSA1 Infineon Technologies TLV4946xy_Rev1.0.pdf?folderId=db3a30431f848401011facc1c83b4674&fileId=db3a304320d39d5901215443fca305d1 Description: IC HALL EFFECT LATCH SC59-3
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IPB020NE7N3GATMA1 IPB020NE7N3GATMA1 Infineon Technologies IPB020NE7N3_Rev2.2.pdf?folderId=db3a304313b8b5a60113cee8763b02d7&fileId=db3a304320d39d590121e31c838554d3 Description: MOSFET N-CH 75V 120A D2PAK
Packaging: Tape & Reel (TR)
Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 120A (Tc)
Rds On (Max) @ Id, Vgs: 2mOhm @ 100A, 10V
Power Dissipation (Max): 300W (Tc)
Vgs(th) (Max) @ Id: 3.8V @ 273µA
Supplier Device Package: PG-TO263-3
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 75 V
Gate Charge (Qg) (Max) @ Vgs: 206 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 14400 pF @ 37.5 V
на замовлення 6000 шт:
термін постачання 21-31 дні (днів)
1000+189.47 грн
Мінімальне замовлення: 1000
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BSC042NE7NS3GATMA1 BSC042NE7NS3GATMA1 Infineon Technologies BSC042NE7NS3G_Rev2.21.pdf?folderId=db3a304313b8b5a60113cee8763b02d7&fileId=db3a304320d39d590121a5f8baf30c25 Description: MOSFET N-CH 75V 19A/100A TDSON
Packaging: Cut Tape (CT)
Package / Case: 8-PowerTDFN
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 19A (Ta), 100A (Tc)
Rds On (Max) @ Id, Vgs: 4.2mOhm @ 50A, 10V
Power Dissipation (Max): 2.5W (Ta), 125W (Tc)
Vgs(th) (Max) @ Id: 3.8V @ 91µA
Supplier Device Package: PG-TDSON-8-1
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 75 V
Gate Charge (Qg) (Max) @ Vgs: 69 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 4800 pF @ 37.5 V
на замовлення 21088 шт:
термін постачання 21-31 дні (днів)
2+218.06 грн
10+136.79 грн
100+94.92 грн
500+75.71 грн
Мінімальне замовлення: 2
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BSC077N12NS3 G BSC077N12NS3 G Infineon Technologies BSC077N12NS3++Rev2.5.pdf?folderId=db3a304313b8b5a60113cee8763b02d7&fileId=db3a30432239cccd0122a7b3afe37d39 Description: MOSFET N-CH 120V 98A 8TDSON
на замовлення 34970 шт:
термін постачання 21-31 дні (днів)
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BSC100N10NSFGATMA1 BSC100N10NSFGATMA1 Infineon Technologies BSC100N10NSF+Rev2.06.pdf?folderId=db3a304313b8b5a60113cee8763b02d7&fileId=db3a30431b3e89eb011b49a75b607b57 Description: MOSFET N-CH 100V 11.4/90A 8TDSON
Packaging: Cut Tape (CT)
Package / Case: 8-PowerTDFN
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 11.4A (Ta), 90A (Tc)
Rds On (Max) @ Id, Vgs: 10mOhm @ 25A, 10V
Power Dissipation (Max): 156W (Tc)
Vgs(th) (Max) @ Id: 4V @ 110µA
Supplier Device Package: PG-TDSON-8-1
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 100 V
Gate Charge (Qg) (Max) @ Vgs: 44 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 2900 pF @ 50 V
на замовлення 5183 шт:
термін постачання 21-31 дні (днів)
2+177.27 грн
10+109.98 грн
100+75.42 грн
500+56.96 грн
Мінімальне замовлення: 2
В кошику  од. на суму  грн.
BSC190N12NS3GATMA1 BSC190N12NS3GATMA1 Infineon Technologies BSC190N12NS3+Rev2.5.pdf?folderId=db3a304313b8b5a60113cee8763b02d7&fileId=db3a30432239cccd0122a7bb1e767d49 Description: MOSFET N-CH 120V 8.6A/44A TDSON
Packaging: Cut Tape (CT)
Package / Case: 8-PowerTDFN
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 8.6A (Ta), 44A (Tc)
Rds On (Max) @ Id, Vgs: 19mOhm @ 39A, 10V
Power Dissipation (Max): 69W (Tc)
Vgs(th) (Max) @ Id: 4V @ 42µA
Supplier Device Package: PG-TDSON-8-1
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 120 V
Gate Charge (Qg) (Max) @ Vgs: 34 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 2300 pF @ 60 V
на замовлення 10717 шт:
термін постачання 21-31 дні (днів)
3+130.99 грн
10+80.67 грн
100+54.47 грн
500+40.58 грн
1000+38.02 грн
Мінімальне замовлення: 3
В кошику  од. на суму  грн.
BSC320N20NS3GATMA1 BSC320N20NS3GATMA1 Infineon Technologies BSC320N20NS3+G+Rev2.2.pdf?folderId=db3a3043163797a6011637d4bae7003b&fileId=db3a3043243b5f17012495e37b301571 Description: MOSFET N-CH 200V 36A TDSON-8
Packaging: Cut Tape (CT)
Package / Case: 8-PowerTDFN
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 36A (Tc)
Rds On (Max) @ Id, Vgs: 32mOhm @ 36A, 10V
Power Dissipation (Max): 125W (Tc)
Vgs(th) (Max) @ Id: 4V @ 90µA
Supplier Device Package: PG-TDSON-8-1
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 200 V
Gate Charge (Qg) (Max) @ Vgs: 29 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 2350 pF @ 100 V
на замовлення 14605 шт:
термін постачання 21-31 дні (днів)
2+215.71 грн
10+135.43 грн
100+94.04 грн
500+75.24 грн
Мінімальне замовлення: 2
В кошику  од. на суму  грн.
BSC520N15NS3GATMA1 BSC520N15NS3GATMA1 Infineon Technologies BSC520N15NS3+Rev2.2.pdf?folderId=db3a304313b8b5a60113cee8763b02d7&fileId=db3a30432239cccd0122eee57d9b21a4 Description: MOSFET N-CH 150V 21A TDSON-8-5
Packaging: Cut Tape (CT)
Package / Case: 8-PowerTDFN
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 21A (Tc)
Rds On (Max) @ Id, Vgs: 52mOhm @ 18A, 10V
Power Dissipation (Max): 57W (Tc)
Vgs(th) (Max) @ Id: 4V @ 35µA
Supplier Device Package: PG-TDSON-8-5
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 8V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 150 V
Gate Charge (Qg) (Max) @ Vgs: 12 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 890 pF @ 75 V
на замовлення 33279 шт:
термін постачання 21-31 дні (днів)
3+112.17 грн
10+68.21 грн
100+45.68 грн
500+33.79 грн
1000+30.87 грн
2000+30.41 грн
Мінімальне замовлення: 3
В кошику  од. на суму  грн.
BSC600N25NS3GATMA1 BSC600N25NS3GATMA1 Infineon Technologies BSC600N25NS3+G+Rev2.3.pdf?folderId=db3a3043163797a6011637d4bae7003b&fileId=db3a3043243b5f17012496ab13871948 Description: MOSFET N-CH 250V 25A TDSON-8-1
Packaging: Cut Tape (CT)
Package / Case: 8-PowerTDFN
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 25A (Tc)
Rds On (Max) @ Id, Vgs: 60mOhm @ 25A, 10V
Power Dissipation (Max): 125W (Tc)
Vgs(th) (Max) @ Id: 4V @ 90µA
Supplier Device Package: PG-TDSON-8-1
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 250 V
Gate Charge (Qg) (Max) @ Vgs: 29 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 2350 pF @ 100 V
на замовлення 12955 шт:
термін постачання 21-31 дні (днів)
2+269.83 грн
10+170.93 грн
100+120.30 грн
500+101.85 грн
Мінімальне замовлення: 2
В кошику  од. на суму  грн.
BSZ520N15NS3GATMA1 BSZ520N15NS3GATMA1 Infineon Technologies BSZ520N15NS3+Rev2.2.pdf?folderId=db3a304326623792012669f6bee2224b&fileId=db3a30432662379201266a0dd612226c Description: MOSFET N-CH 150V 21A 8TSDSON
Packaging: Cut Tape (CT)
Package / Case: 8-PowerTDFN
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 21A (Tc)
Rds On (Max) @ Id, Vgs: 52mOhm @ 18A, 10V
Power Dissipation (Max): 57W (Tc)
Vgs(th) (Max) @ Id: 4V @ 35µA
Supplier Device Package: PG-TSDSON-8
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 8V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 150 V
Gate Charge (Qg) (Max) @ Vgs: 12 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 890 pF @ 75 V
на замовлення 6859 шт:
термін постачання 21-31 дні (днів)
3+138.84 грн
10+85.58 грн
100+57.91 грн
500+43.22 грн
1000+40.87 грн
Мінімальне замовлення: 3
В кошику  од. на суму  грн.
IPB017N06N3GATMA1 IPB017N06N3GATMA1 Infineon Technologies IPB017N06N3_Rev2.0.pdf?folderId=db3a30431441fb5d01148ca9f1be0e77&fileId=db3a30431ddc9372011e264a7ab746ea Description: MOSFET N-CH 60V 180A TO263-7
Packaging: Cut Tape (CT)
Package / Case: TO-263-7, D2PAK (6 Leads + Tab)
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 180A (Tc)
Rds On (Max) @ Id, Vgs: 1.7mOhm @ 100A, 10V
Power Dissipation (Max): 250W (Tc)
Vgs(th) (Max) @ Id: 4V @ 196µA
Supplier Device Package: PG-TO263-7
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 60 V
Gate Charge (Qg) (Max) @ Vgs: 275 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 23000 pF @ 30 V
на замовлення 5663 шт:
термін постачання 21-31 дні (днів)
2+309.05 грн
10+196.61 грн
100+139.34 грн
500+121.23 грн
Мінімальне замовлення: 2
В кошику  од. на суму  грн.
IPB034N06N3GATMA1 IPB034N06N3GATMA1 Infineon Technologies IPB034N06N3_G.pdf Description: MOSFET N-CH 60V 100A TO263-7
Packaging: Cut Tape (CT)
Package / Case: TO-263-7, D2PAK (6 Leads + Tab)
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 100A (Tc)
Rds On (Max) @ Id, Vgs: 3.4mOhm @ 100A, 10V
Power Dissipation (Max): 167W (Tc)
Vgs(th) (Max) @ Id: 4V @ 93µA
Supplier Device Package: PG-TO263-7
Part Status: Obsolete
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 60 V
Gate Charge (Qg) (Max) @ Vgs: 130 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 11000 pF @ 30 V
товару немає в наявності
В кошику  од. на суму  грн.
IPB036N12N3 G IPB036N12N3 G Infineon Technologies IPB036N12N3+G_Rev2.2.pdf?folderId=db3a304313b8b5a60113cee8763b02d7&fileId=db3a304323b87bc20123c7030ed51f56 Description: MOSFET N-CH 120V 180A TO263-7
на замовлення 5518 шт:
термін постачання 21-31 дні (днів)
В кошику  од. на суму  грн.
IPB038N12N3GATMA1 IPB038N12N3GATMA1 Infineon Technologies IPP_I_B041N12N3_Rev2.2.pdf?folderId=db3a304313b8b5a60113cee8763b02d7&fileId=db3a30432239cccd0122a75b86467ca4 Description: MOSFET N-CH 120V 120A D2PAK
Packaging: Cut Tape (CT)
Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 120A (Tc)
Rds On (Max) @ Id, Vgs: 3.8mOhm @ 100A, 10V
Power Dissipation (Max): 300W (Tc)
Vgs(th) (Max) @ Id: 4V @ 270µA
Supplier Device Package: PG-TO263-3
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 120 V
Gate Charge (Qg) (Max) @ Vgs: 211 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 13800 pF @ 60 V
на замовлення 1857 шт:
термін постачання 21-31 дні (днів)
1+346.70 грн
10+221.92 грн
100+158.39 грн
500+141.63 грн
В кошику  од. на суму  грн.
IPB039N10N3GATMA1 IPB039N10N3GATMA1 Infineon Technologies IPB039N10N3+G_Rev2.1.pdf?folderId=db3a304313b8b5a60113cee8763b02d7&fileId=db3a30431ce5fb52011d1ed1fd3915e0 Description: MOSFET N-CH 100V 160A TO263-7
Packaging: Cut Tape (CT)
Package / Case: TO-263-7, D2PAK (6 Leads + Tab)
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 160A (Tc)
Rds On (Max) @ Id, Vgs: 3.9mOhm @ 100A, 10V
Power Dissipation (Max): 214W (Tc)
Vgs(th) (Max) @ Id: 3.5V @ 160µA
Supplier Device Package: PG-TO263-7
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 6V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 100 V
Gate Charge (Qg) (Max) @ Vgs: 117 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 8410 pF @ 50 V
на замовлення 20306 шт:
термін постачання 21-31 дні (днів)
2+258.85 грн
10+163.76 грн
100+114.92 грн
500+96.30 грн
Мінімальне замовлення: 2
В кошику  од. на суму  грн.
IPB107N20N3GATMA1 IPB107N20N3GATMA1 Infineon Technologies IPP_I_110N20N3+G_IPB107N20N3+G+Rev2.2.pdf?folderId=db3a3043163797a6011637d4bae7003b&fileId=db3a3043243b5f170124968e7d1f18e7 Description: MOSFET N-CH 200V 88A D2PAK
Packaging: Cut Tape (CT)
Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 88A (Tc)
Rds On (Max) @ Id, Vgs: 10.7mOhm @ 88A, 10V
Power Dissipation (Max): 300W (Tc)
Vgs(th) (Max) @ Id: 4V @ 270µA
Supplier Device Package: PG-TO263-3
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 200 V
Gate Charge (Qg) (Max) @ Vgs: 87 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 7100 pF @ 100 V
на замовлення 4330 шт:
термін постачання 21-31 дні (днів)
1+413.37 грн
10+266.79 грн
100+192.72 грн
500+180.24 грн
В кошику  од. на суму  грн.
IPB123N10N3GATMA1 IPB123N10N3GATMA1 Infineon Technologies Infineon-IPB123N10N3+G-DS-v02_03-EN.pdf?fileId=5546d4624fb7fef2014ffe55aac64b6e Description: MOSFET N-CH 100V 58A D2PAK
Packaging: Cut Tape (CT)
Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 58A (Tc)
Rds On (Max) @ Id, Vgs: 12.3mOhm @ 46A, 10V
Power Dissipation (Max): 94W (Tc)
Vgs(th) (Max) @ Id: 3.5V @ 46µA
Supplier Device Package: PG-TO263-3
Drive Voltage (Max Rds On, Min Rds On): 6V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 100 V
Gate Charge (Qg) (Max) @ Vgs: 35 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 2500 pF @ 50 V
на замовлення 97 шт:
термін постачання 21-31 дні (днів)
3+145.90 грн
10+90.04 грн
Мінімальне замовлення: 3
В кошику  од. на суму  грн.
IPB200N15N3 G IPB200N15N3 G Infineon Technologies IPD200N15N3_Rev2.02.pdf?folderId=db3a304313b8b5a60113cee7c66a02d6&fileId=db3a304319c6f18c0119cd1cc23279be Description: MOSFET N-CH 150V 50A TO263-3
на замовлення 4367 шт:
термін постачання 21-31 дні (днів)
В кошику  од. на суму  грн.
IPB200N25N3GATMA1 IPB200N25N3GATMA1 Infineon Technologies IPP_B_I_200N25N3+G+Rev2.2.pdf?folderId=db3a3043163797a6011637d4bae7003b&fileId=db3a3043243b5f17012496b87e9f1971 Description: MOSFET N-CH 250V 64A D2PAK
Packaging: Cut Tape (CT)
Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 64A (Tc)
Rds On (Max) @ Id, Vgs: 20mOhm @ 64A, 10V
Power Dissipation (Max): 300W (Tc)
Vgs(th) (Max) @ Id: 4V @ 270µA
Supplier Device Package: PG-TO263-3
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 250 V
Gate Charge (Qg) (Max) @ Vgs: 86 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 7100 pF @ 100 V
на замовлення 3185 шт:
термін постачання 21-31 дні (днів)
1+495.73 грн
10+323.13 грн
100+244.42 грн
В кошику  од. на суму  грн.
IPB320N20N3GATMA1 IPB320N20N3GATMA1 Infineon Technologies IPP_B_I_320N20N3+G+Rev2.2.pdf?folderId=db3a3043163797a6011637d4bae7003b&fileId=db3a3043243b5f170124967064ba184a Description: MOSFET N-CH 200V 34A D2PAK
Packaging: Cut Tape (CT)
Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 34A (Tc)
Rds On (Max) @ Id, Vgs: 32mOhm @ 34A, 10V
Power Dissipation (Max): 136W (Tc)
Vgs(th) (Max) @ Id: 4V @ 90µA
Supplier Device Package: PG-TO263-3
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 200 V
Gate Charge (Qg) (Max) @ Vgs: 29 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 2350 pF @ 100 V
на замовлення 5957 шт:
термін постачання 21-31 дні (днів)
2+247.87 грн
10+156.28 грн
100+109.38 грн
500+90.55 грн
Мінімальне замовлення: 2
В кошику  од. на суму  грн.
IPB600N25N3GATMA1 IPB600N25N3GATMA1 Infineon Technologies IPP_B_600N25N3+G+Rev2.3.pdf?folderId=db3a3043163797a6011637d4bae7003b&fileId=db3a3043243b5f17012496c9548d199c Description: MOSFET N-CH 250V 25A D2PAK
Packaging: Cut Tape (CT)
Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 25A (Tc)
Rds On (Max) @ Id, Vgs: 60mOhm @ 25A, 10V
Power Dissipation (Max): 136W (Tc)
Vgs(th) (Max) @ Id: 4V @ 90µA
Supplier Device Package: PG-TO263-3
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 250 V
Gate Charge (Qg) (Max) @ Vgs: 29 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 2350 pF @ 100 V
на замовлення 2844 шт:
термін постачання 21-31 дні (днів)
2+238.45 грн
10+150.54 грн
100+105.13 грн
500+86.23 грн
Мінімальне замовлення: 2
В кошику  од. на суму  грн.
IPB60R099CPATMA1 IPB60R099CPATMA1 Infineon Technologies IPB60R099CP_rev2.0.pdf?folderId=db3a304412b407950112b408e8c90004&fileId=db3a304412b407950112b42ded51491b Description: MOSFET N-CH 600V 31A TO263-3
Packaging: Cut Tape (CT)
Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 31A (Tc)
Rds On (Max) @ Id, Vgs: 99mOhm @ 18A, 10V
Power Dissipation (Max): 255W (Tc)
Vgs(th) (Max) @ Id: 3.5V @ 1.2mA
Supplier Device Package: PG-TO263-3-2
Part Status: Not For New Designs
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 600 V
Gate Charge (Qg) (Max) @ Vgs: 80 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 2800 pF @ 100 V
на замовлення 4360 шт:
термін постачання 21-31 дні (днів)
1+398.47 грн
10+310.97 грн
100+239.91 грн
В кошику  од. на суму  грн.
IPB60R280C6ATMA1 IPB60R280C6ATMA1 Infineon Technologies IPB60R280C6_2_1.pdf?folderId=db3a3043163797a6011638933eda014b&fileId=db3a30432313ff5e0123a4413ff0274a Description: MOSFET N-CH 600V 13.8A D2PAK
Packaging: Cut Tape (CT)
Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 13.8A (Tc)
Rds On (Max) @ Id, Vgs: 280mOhm @ 6.5A, 10V
Power Dissipation (Max): 104W (Tc)
Vgs(th) (Max) @ Id: 3.5V @ 430µA
Supplier Device Package: PG-TO263-3
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 600 V
Gate Charge (Qg) (Max) @ Vgs: 43 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 950 pF @ 100 V
товару немає в наявності
В кошику  од. на суму  грн.
IPB60R600CPATMA1 IPB60R600CPATMA1 Infineon Technologies IPB60R600CP_rev2.0.pdf?folderId=db3a3043163797a6011637d4bae7003b&fileId=db3a3043183a95550118792f22ec0462 Description: MOSFET N-CH 600V 6.1A D2PAK
Packaging: Cut Tape (CT)
Package / Case: TO-263-3, D²Pak (2 Leads + Tab), TO-263AB
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 6.1A (Tc)
Rds On (Max) @ Id, Vgs: 600mOhm @ 3.3A, 10V
Power Dissipation (Max): 60W (Tc)
Vgs(th) (Max) @ Id: 3.5V @ 220µA
Supplier Device Package: PG-TO263-3
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 600 V
Gate Charge (Qg) (Max) @ Vgs: 27 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 550 pF @ 100 V
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IPD110N12N3GBUMA1 IPD110N12N3GBUMA1 Infineon Technologies IPD_S110N12N3_G.pdf Description: MOSFET N-CH 120V 75A TO252-3
Packaging: Cut Tape (CT)
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 75A (Tc)
Rds On (Max) @ Id, Vgs: 11mOhm @ 75A, 10V
Power Dissipation (Max): 136W (Tc)
Vgs(th) (Max) @ Id: 4V @ 83µA
Supplier Device Package: PG-TO252-3
Part Status: Obsolete
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 120 V
Gate Charge (Qg) (Max) @ Vgs: 65 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 4310 pF @ 60 V
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IPD320N20N3GBTMA1 IPD320N20N3GBTMA1 Infineon Technologies Infineon-IPD320N20N3+G-DS-v02_03-en.pdf?fileId=db3a3043243b5f1701249669796017f3 Description: MOSFET N-CH 200V 34A TO252-3
Packaging: Cut Tape (CT)
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 34A (Tc)
Rds On (Max) @ Id, Vgs: 32mOhm @ 34A, 10V
Power Dissipation (Max): 136W (Tc)
Vgs(th) (Max) @ Id: 4V @ 90µA
Supplier Device Package: PG-TO252-3
Part Status: Obsolete
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 200 V
Gate Charge (Qg) (Max) @ Vgs: 29 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 2350 pF @ 100 V
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IPD600N25N3GBTMA1 IPD600N25N3GBTMA1 Infineon Technologies Infineon-IPD600N25N3G_-DS-v02_03-en.pdf?fileId=db3a3043243b5f17012496b03c67195b Description: MOSFET N-CH 250V 25A TO252-3
Packaging: Cut Tape (CT)
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 25A (Tc)
Rds On (Max) @ Id, Vgs: 60mOhm @ 25A, 10V
Power Dissipation (Max): 136W (Tc)
Vgs(th) (Max) @ Id: 4V @ 90µA
Supplier Device Package: PG-TO252-3
Part Status: Obsolete
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 250 V
Gate Charge (Qg) (Max) @ Vgs: 29 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 2350 pF @ 100 V
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BSC077N12NS3 G BSC077N12NS3 G Infineon Technologies BSC077N12NS3++Rev2.5.pdf?folderId=db3a304313b8b5a60113cee8763b02d7&fileId=db3a30432239cccd0122a7b3afe37d39 Description: MOSFET N-CH 120V 98A 8TDSON
на замовлення 34970 шт:
термін постачання 21-31 дні (днів)
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IPB036N12N3 G IPB036N12N3 G Infineon Technologies IPB036N12N3+G_Rev2.2.pdf?folderId=db3a304313b8b5a60113cee8763b02d7&fileId=db3a304323b87bc20123c7030ed51f56 Description: MOSFET N-CH 120V 180A TO263-7
на замовлення 5518 шт:
термін постачання 21-31 дні (днів)
В кошику  од. на суму  грн.
IPB200N15N3 G IPB200N15N3 G Infineon Technologies IPD200N15N3_Rev2.02.pdf?folderId=db3a304313b8b5a60113cee7c66a02d6&fileId=db3a304319c6f18c0119cd1cc23279be Description: MOSFET N-CH 150V 50A TO263-3
на замовлення 4367 шт:
термін постачання 21-31 дні (днів)
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IR11672ASPBF IR11672ASPBF Infineon Technologies ir11672aspbf.pdf?fileId=5546d462533600a4015355c455561653 Description: IC MOSFET DRIVER 200V 8-SOIC
Packaging: Tube
Package / Case: 8-SOIC (0.154", 3.90mm Width)
Mounting Type: Surface Mount
Voltage - Input: 200V
Operating Temperature: -25°C ~ 125°C (TJ)
Voltage - Supply: 11.4V ~ 18V
Applications: Secondary-Side Controller
Supplier Device Package: 8-SOIC
Part Status: Discontinued at Digi-Key
Current - Supply: 50 mA
DigiKey Programmable: Not Verified
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IR11682STRPBF IR11682STRPBF Infineon Technologies ir11682spbf.pdf?fileId=5546d462533600a4015355c47188165a Description: IC SECONDARY SIDE CTRLR 8SOIC
Packaging: Tape & Reel (TR)
Package / Case: 8-SOIC (0.154", 3.90mm Width)
Mounting Type: Surface Mount
Operating Temperature: -25°C ~ 125°C
Voltage - Supply: 8.6V ~ 18V
Applications: Secondary-Side Controller, Synchronous Rectifier
Supplier Device Package: 8-SOIC
Part Status: Active
Current - Supply: 48 mA
DigiKey Programmable: Not Verified
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IR1168SPBF IR1168SPBF Infineon Technologies ir1168.pdf?fileId=5546d462533600a4015355c467fa1658 Description: IC SECONDARY SIDE CTRLR 8SOIC
Packaging: Tube
Package / Case: 8-SOIC (0.154", 3.90mm Width)
Mounting Type: Surface Mount
Operating Temperature: -25°C ~ 125°C
Voltage - Supply: 8.6V ~ 18V
Applications: Secondary-Side Controller, Synchronous Rectifier
Supplier Device Package: 8-SOIC
Part Status: Discontinued at Digi-Key
Current - Supply: 48 mA
DigiKey Programmable: Not Verified
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IR2521DSTRPBF IR2521DSTRPBF Infineon Technologies fundamentals-of-power-semiconductors Description: IC BALLAST CTLR ADAPTIVE 8-SOIC
Packaging: Tape & Reel (TR)
Package / Case: 8-SOIC (0.154", 3.90mm Width)
Mounting Type: Surface Mount
Supplier Device Package: 8-SOIC
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IR3411SPBF IR3411SPBF Infineon Technologies Part_Number_Guide_Web.pdf Description: IC SWITCH HIGH SIDE D2PAK-5
Packaging: Tube
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TLE7240SL TLE7240SL_Rev1.4_Oct2011.pdf
TLE7240SL
Виробник: Infineon Technologies
Description: IC PWR DRIVER N-CHAN 1:2 24SSOP
Packaging: Tape & Reel (TR)
Package / Case: 24-SSOP (0.154", 3.90mm Width)
Output Type: N-Channel
Mounting Type: Surface Mount
Number of Outputs: 8
Interface: SPI
Switch Type: General Purpose
Operating Temperature: -40°C ~ 150°C (TJ)
Output Configuration: Low Side
Rds On (Typ): 1.5Ohm
Voltage - Load: 4.5V ~ 5.5V
Voltage - Supply (Vcc/Vdd): 3V ~ 5.5V
Current - Output (Max): 210mA
Ratio - Input:Output: 1:2
Supplier Device Package: PG-SSOP-24-7
Fault Protection: Open Load Detect, Over Temperature
Part Status: Obsolete
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TLE7243SLXUMA2 TLE7243SL.pdf
TLE7243SLXUMA2
Виробник: Infineon Technologies
Description: IC PWR DRIVER N-CHAN 1:2 24SSOP
Packaging: Tape & Reel (TR)
Package / Case: 24-SSOP (0.154", 3.90mm Width)
Output Type: N-Channel
Mounting Type: Surface Mount
Number of Outputs: 8
Interface: SPI
Switch Type: General Purpose
Operating Temperature: -40°C ~ 150°C (TJ)
Output Configuration: Low Side
Rds On (Typ): 1.2Ohm
Voltage - Load: 4.5V ~ 5.5V
Voltage - Supply (Vcc/Vdd): 3V ~ 5.5V
Current - Output (Max): 260mA
Ratio - Input:Output: 1:2
Supplier Device Package: PG-SSOP-24-7
Fault Protection: Open Load Detect, Over Temperature
Part Status: Obsolete
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TLE7244SL TLE7244SL_v1.3_Oct2011.pdf
TLE7244SL
Виробник: Infineon Technologies
Description: IC PWR DRIVER N-CHAN 1:2 24SSOP
Packaging: Tape & Reel (TR)
Package / Case: 24-SSOP (0.154", 3.90mm Width)
Output Type: N-Channel
Mounting Type: Surface Mount
Number of Outputs: 8
Interface: SPI
Switch Type: Relay, Solenoid Driver
Operating Temperature: -40°C ~ 150°C (TJ)
Output Configuration: Low Side
Rds On (Typ): 800mOhm
Voltage - Load: 4.5V ~ 5.5V
Voltage - Supply (Vcc/Vdd): 3V ~ 5.5V
Current - Output (Max): 290mA
Ratio - Input:Output: 1:2
Supplier Device Package: PG-SSOP-24-7
Fault Protection: Open Load Detect, Over Temperature
Part Status: Obsolete
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TLE7272-2E Infineon-TLE7272_2-DS-v01_00-en.pdf?folderId=db3a304318f3fe290118f5a433570040&fileId=db3a304327b89750012801509d8437e2&ack=t
TLE7272-2E
Виробник: Infineon Technologies
Description: IC REG LDO 5V 0.3A 14SSOP
на замовлення 2500 шт:
термін постачання 21-31 дні (днів)
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TLE72732EV50XUMA1 Infineon-TLE7273-2-DS-v01_21-EN.pdf?fileId=5546d46259d9a4bf0159f9d710123eee
TLE72732EV50XUMA1
Виробник: Infineon Technologies
Description: IC REG LIN 5V 180MA SSOP-14-EP
Packaging: Tape & Reel (TR)
Package / Case: 14-LSSOP (0.154", 3.90mm Width) Exposed Pad
Output Type: Fixed
Mounting Type: Surface Mount
Current - Output: 180mA
Operating Temperature: -40°C ~ 150°C
Output Configuration: Positive
Current - Quiescent (Iq): 36 µA
Voltage - Input (Max): 45V
Number of Regulators: 1
Supplier Device Package: PG-SSOP-14-EP
Voltage - Output (Min/Fixed): 5V
Control Features: Enable, Reset, Watchdog
Part Status: Active
PSRR: 60dB (100Hz)
Voltage Dropout (Max): 0.5V @ 180mA
Protection Features: Over Current, Over Temperature, Short Circuit
Grade: Automotive
Qualification: AEC-Q100
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TLE72732GV26XUMA1 Infineon-TLE7273-2-DS-v01_21-EN.pdf?fileId=5546d46259d9a4bf0159f9d710123eee
TLE72732GV26XUMA1
Виробник: Infineon Technologies
Description: IC REG LIN 2.6V 180MA PG-DSO-14
Packaging: Tape & Reel (TR)
Package / Case: 14-SOIC (0.154", 3.90mm Width)
Output Type: Fixed
Mounting Type: Surface Mount
Current - Output: 180mA
Operating Temperature: -40°C ~ 150°C
Output Configuration: Positive
Current - Quiescent (Iq): 36 µA
Voltage - Input (Max): 45V
Number of Regulators: 1
Supplier Device Package: PG-DSO-14
Voltage - Output (Min/Fixed): 2.6V
Control Features: Enable, Reset, Watchdog
Grade: Automotive
PSRR: 60dB (100Hz)
Voltage Dropout (Max): 0.5V @ 180mA
Protection Features: Over Current, Over Temperature, Short Circuit
Qualification: AEC-Q100
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TLE72782EV50XUMA1 TLE7278-2.pdf
TLE72782EV50XUMA1
Виробник: Infineon Technologies
Description: IC REG LIN 5V 180MA SSOP-14-EP
Packaging: Tape & Reel (TR)
Package / Case: 14-LSSOP (0.154", 3.90mm Width) Exposed Pad
Output Type: Fixed
Mounting Type: Surface Mount
Current - Output: 180mA
Operating Temperature: -40°C ~ 150°C
Output Configuration: Positive
Current - Quiescent (Iq): 36 µA
Voltage - Input (Max): 45V
Number of Regulators: 1
Supplier Device Package: PG-SSOP-14-EP
Voltage - Output (Min/Fixed): 5V
Control Features: Enable, Reset, Watchdog
Grade: Automotive
PSRR: 60dB (100Hz)
Voltage Dropout (Max): 0.5V @ 180mA
Protection Features: Over Current, Over Temperature, Short Circuit
Qualification: AEC-Q100
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TLE72782GV26XUMA1 Infineon-TLE7278_2-DS-v01_02-en.pdf?folderId=db3a304318f3fe290118f5a433570040&fileId=db3a30431be39b97011be5492aa10094&ack=t
TLE72782GV26XUMA1
Виробник: Infineon Technologies
Description: IC REG LDO 2.6V 0.18A 14DSO
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TLE72792EV50XUMA1 TLE7279-2.pdf
TLE72792EV50XUMA1
Виробник: Infineon Technologies
Description: IC REG LIN 5V 180MA SSOP-14-EP
Packaging: Tape & Reel (TR)
Package / Case: 14-LSSOP (0.154", 3.90mm Width) Exposed Pad
Output Type: Fixed
Mounting Type: Surface Mount
Current - Output: 180mA
Operating Temperature: -40°C ~ 150°C
Output Configuration: Positive
Current - Quiescent (Iq): 36 µA
Voltage - Input (Max): 45V
Number of Regulators: 1
Supplier Device Package: PG-SSOP-14-EP
Voltage - Output (Min/Fixed): 5V
Control Features: Enable, Reset
Grade: Automotive
PSRR: 60dB (100Hz)
Voltage Dropout (Max): 0.5V @ 180mA
Protection Features: Over Current, Over Temperature, Short Circuit
Qualification: AEC-Q100
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TLE72792GV26XUMA1 Infineon-TLE7279_2-DS-v01_02-en.pdf?folderId=db3a304318f3fe290118f5a433570040&fileId=db3a30431be39b97011be54c333b00a0&ack=t
TLE72792GV26XUMA1
Виробник: Infineon Technologies
Description: IC REG LDO 2.6V 0.18A 14DSO
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TLE7729TXUMA1 TLE7729_PB.pdf
TLE7729TXUMA1
Виробник: Infineon Technologies
Description: IC INTERFACE SPECIALIZED 28TSSOP
Packaging: Tape & Reel (TR)
Package / Case: 28-TSSOP (0.173", 4.40mm Width)
Mounting Type: Surface Mount
Interface: SPI Serial
Voltage - Supply: 3.3V, 5V
Supplier Device Package: PG-TSSOP-28
Part Status: Obsolete
Grade: Automotive
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TLE8203EXUMA1 Infineon-TLE8203E-DS-v01_00-EN.pdf?fileId=5546d46259d9a4bf015a84d87c5b7568
TLE8203EXUMA1
Виробник: Infineon Technologies
Description: IC DRV MOTOR MIRROR PWR DSO-36
товару немає в наявності
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TLE8366EV33XUMA1 Infineon-TLE8366-DS-v01_00-EN.pdf?fileId=5546d46258fc0bc1015969d2def641fa
TLE8366EV33XUMA1
Виробник: Infineon Technologies
Description: IC REG BUCK 3.3V 1.8A PGDSO-8
Packaging: Tape & Reel (TR)
Package / Case: 8-SOIC (0.154", 3.90mm Width)
Output Type: Fixed
Mounting Type: Surface Mount
Number of Outputs: 1
Function: Step-Down
Current - Output: 1.8A
Operating Temperature: -40°C ~ 150°C (TJ)
Output Configuration: Positive
Frequency - Switching: 370kHz
Voltage - Input (Max): 45V
Topology: Buck
Supplier Device Package: PG-DSO-8
Synchronous Rectifier: No
Voltage - Input (Min): 4.75V
Voltage - Output (Min/Fixed): 3.3V
Part Status: Active
Grade: Automotive
Qualification: AEC-Q100
на замовлення 2500 шт:
термін постачання 21-31 дні (днів)
Кількість Ціна
2500+95.39 грн
Мінімальне замовлення: 2500
В кошику  од. на суму  грн.
TLE8366EV50XUMA1 Infineon-TLE8366-DS-v01_00-EN.pdf?fileId=5546d46258fc0bc1015969d2def641fa
TLE8366EV50XUMA1
Виробник: Infineon Technologies
Description: IC REG BUCK 5V 1.8A PGDSO-8
Packaging: Tape & Reel (TR)
Package / Case: 8-SOIC (0.154", 3.90mm Width)
Output Type: Fixed
Mounting Type: Surface Mount
Number of Outputs: 1
Function: Step-Down
Current - Output: 1.8A
Operating Temperature: -40°C ~ 150°C (TJ)
Output Configuration: Positive
Frequency - Switching: 370kHz
Voltage - Input (Max): 45V
Topology: Buck
Supplier Device Package: PG-DSO-8
Synchronous Rectifier: No
Voltage - Input (Min): 4.75V
Voltage - Output (Min/Fixed): 5V
Part Status: Active
Grade: Automotive
Qualification: AEC-Q100
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TLE8366EVXUMA1 Infineon-TLE8366-DS-v01_00-EN.pdf?fileId=5546d46258fc0bc1015969d2def641fa
TLE8366EVXUMA1
Виробник: Infineon Technologies
Description: IC REG BUCK ADJ 1.8A PGDSO-8
Packaging: Tape & Reel (TR)
Package / Case: 8-SOIC (0.154", 3.90mm Width)
Output Type: Adjustable
Mounting Type: Surface Mount
Number of Outputs: 1
Function: Step-Down
Current - Output: 1.8A
Operating Temperature: -40°C ~ 150°C (TJ)
Output Configuration: Positive
Frequency - Switching: 370kHz
Voltage - Input (Max): 45V
Topology: Buck
Supplier Device Package: PG-DSO-8
Synchronous Rectifier: No
Voltage - Output (Max): 16V
Voltage - Input (Min): 4.75V
Voltage - Output (Min/Fixed): 0.6V
Part Status: Active
Grade: Automotive
Qualification: AEC-Q100
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TLE8444SLXUMA1 Infineon-TLE8444SL-DS-v01_01-en.pdf?fileId=db3a30431ff98815012060afb566617a
TLE8444SLXUMA1
Виробник: Infineon Technologies
Description: IC MOTOR DRIVER BIPOLAR 24SSOP
Packaging: Tape & Reel (TR)
Package / Case: 24-SSOP (0.154", 3.90mm Width)
Mounting Type: Surface Mount
Function: Driver - Fully Integrated, Control and Power Stage
Current - Output: 1A
Interface: Parallel
Operating Temperature: -40°C ~ 150°C (TJ)
Output Configuration: Half Bridge (4)
Voltage - Supply: 8V ~ 18V
Technology: BiCDMOS
Voltage - Load: 8V ~ 18V
Supplier Device Package: PG-SSOP-24-7
Motor Type - Stepper: Bipolar, Unipolar
Motor Type - AC, DC: Brushed DC
Part Status: Active
Grade: Automotive
на замовлення 20000 шт:
термін постачання 21-31 дні (днів)
Кількість Ціна
2500+106.69 грн
Мінімальне замовлення: 2500
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TLE8458GXUMA1 Infineon-TLE8458-DS-v01_00-EN.pdf?fileId=5546d46259d9a4bf015a3d2da4b66071
TLE8458GXUMA1
Виробник: Infineon Technologies
Description: IC TRANSCEIVER FULL 1/1 DSO-8
Packaging: Tape & Reel (TR)
Package / Case: 8-SOIC (0.154", 3.90mm Width)
Mounting Type: Surface Mount
Type: Transceiver
Operating Temperature: -40°C ~ 150°C
Voltage - Supply: 7V ~ 27V
Number of Drivers/Receivers: 1/1
Data Rate: 20kbps
Protocol: LINbus
Supplier Device Package: PG-DSO-8-16
Duplex: Full
Part Status: Not For New Designs
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TLI4906KHTSA1 TLI4906x_DS_Rev1.0.pdf?folderId=db3a30431f848401011facc1c83b4674&fileId=db3a304320d39d590121543b7ddc05c4
TLI4906KHTSA1
Виробник: Infineon Technologies
Description: MAGNETIC SWITCH UNIPOL SC59
Packaging: Tape & Reel (TR)
Features: Temperature Compensated
Package / Case: TO-236-3, SC-59, SOT-23-3
Output Type: Open Drain
Polarization: South Pole
Mounting Type: Surface Mount
Function: Unipolar Switch
Operating Temperature: -40°C ~ 125°C (TA)
Voltage - Supply: 2.7V ~ 18V
Technology: Hall Effect
Sensing Range: 13.9mT Trip, 4.7mT Release
Current - Output (Max): 20mA
Current - Supply (Max): 6mA
Supplier Device Package: PG-SC59-3
Test Condition: -40°C ~ 125°C
Part Status: Active
Grade: Automotive
Qualification: AEC-Q100
на замовлення 3000 шт:
термін постачання 21-31 дні (днів)
Кількість Ціна
3000+21.29 грн
Мінімальне замовлення: 3000
В кошику  од. на суму  грн.
TLI49462KHTSA1 TLI4946xy_DS_Rev1.0.pdf?folderId=db3a30431f848401011facc1c83b4674&fileId=db3a304320d39d590121543f7e4c05c8
TLI49462KHTSA1
Виробник: Infineon Technologies
Description: MAGNETIC SWITCH UNIPOLAR SC59
Packaging: Tape & Reel (TR)
Features: Temperature Compensated
Package / Case: TO-236-3, SC-59, SOT-23-3
Output Type: Open Drain
Polarization: South Pole
Mounting Type: Surface Mount
Function: Unipolar Switch
Operating Temperature: -40°C ~ 125°C (TA)
Voltage - Supply: 2.7V ~ 18V
Technology: Hall Effect
Sensing Range: 19.2mT Trip, -19.2mT Release
Current - Output (Max): 20mA
Current - Supply (Max): 6mA
Supplier Device Package: PG-SC59-3
Test Condition: -40°C ~ 125°C
Grade: Automotive
Qualification: AEC-Q100
товару немає в наявності
В кошику  од. на суму  грн.
TLI49462LHALA1 TLI4946xy_DS_Rev1.0.pdf?folderId=db3a30431f848401011facc1c83b4674&fileId=db3a304320d39d590121543f7e4c05c8
TLI49462LHALA1
Виробник: Infineon Technologies
Description: MAGNETIC SWITCH UNIPOLAR SSO-3-2
Packaging: Tape & Box (TB)
Features: Temperature Compensated
Package / Case: 3-SSIP, SSO-3-02
Output Type: Open Drain
Polarization: South Pole
Mounting Type: Through Hole
Function: Unipolar Switch
Operating Temperature: -40°C ~ 125°C (TA)
Voltage - Supply: 2.7V ~ 18V
Technology: Hall Effect
Sensing Range: 3.5mT Trip, -3.5mT Release
Current - Output (Max): 20mA
Current - Supply (Max): 6mA
Supplier Device Package: PG-SSO-3-2
Test Condition: -40°C ~ 125°C
Grade: Automotive
Qualification: AEC-Q100
товару немає в наявності
В кошику  од. на суму  грн.
TLI4946KHTSA1 TLI4946xy_DS_Rev1.0.pdf?folderId=db3a30431f848401011facc1c83b4674&fileId=db3a304320d39d590121543f7e4c05c8
TLI4946KHTSA1
Виробник: Infineon Technologies
Description: MAGNETIC SWITCH UNIPOLAR SC59
товару немає в наявності
В кошику  од. на суму  грн.
TLV4906K TLV4906x_DS_Rev1.0.pdf?folderId=db3a30431f848401011facc1c83b4674&fileId=db3a304320d39d590121544295e605cd
TLV4906K
Виробник: Infineon Technologies
Description: IC HALL EFFECT SW SC59-3
товару немає в наявності
В кошику  од. на суму  грн.
TLV4906LHALA1 dgdl?fileId=db3a30432ea425a4012ec42cfd2b550a
TLV4906LHALA1
Виробник: Infineon Technologies
Description: MAGNETIC SWITCH UNIPOLAR SSO-3-2
Packaging: Tape & Box (TB)
Features: Temperature Compensated
Package / Case: 3-SSIP, SSO-3-02
Output Type: Open Collector
Polarization: South Pole
Mounting Type: Through Hole
Function: Unipolar Switch
Operating Temperature: -40°C ~ 85°C (TA)
Voltage - Supply: 2.7V ~ 18V
Technology: Hall Effect
Sensing Range: 13.9mT Trip, 4.7mT Release
Current - Output (Max): 20mA
Current - Supply (Max): 6mA
Supplier Device Package: PG-SSO-3-2
Test Condition: -40°C ~ 85°C
Grade: Automotive
Qualification: AEC-Q100
товару немає в наявності
В кошику  од. на суму  грн.
TLV49462KFTSA1 TLV4946xy_Rev1.0.pdf?folderId=db3a30431f848401011facc1c83b4674&fileId=db3a304320d39d5901215443fca305d1
TLV49462KFTSA1
Виробник: Infineon Technologies
Description: IC HALL EFFECT LATCH SC59-3
товару немає в наявності
В кошику  од. на суму  грн.
TLV49462LHALA1 TLV4946xy_Rev1.0.pdf?folderId=db3a30431f848401011facc1c83b4674&fileId=db3a304320d39d5901215443fca305d1
TLV49462LHALA1
Виробник: Infineon Technologies
Description: MAGNETIC SWITCH LATCH SSO-3-2
Packaging: Tape & Box (TB)
Features: Temperature Compensated
Package / Case: 3-SSIP, SSO-3-02
Output Type: Open Drain
Polarization: South Pole
Mounting Type: Through Hole
Function: Latch
Operating Temperature: -40°C ~ 85°C (TA)
Voltage - Supply: 2.7V ~ 18V
Technology: Hall Effect
Sensing Range: 3.5mT Trip, -3.5mT Release
Current - Output (Max): 20mA
Current - Supply (Max): 6mA
Supplier Device Package: PG-SSO-3-2
Test Condition: -40°C ~ 85°C
Grade: Automotive
Qualification: AEC-Q100
товару немає в наявності
В кошику  од. на суму  грн.
TLV4946KFTSA1 TLV4946xy_Rev1.0.pdf?folderId=db3a30431f848401011facc1c83b4674&fileId=db3a304320d39d5901215443fca305d1
TLV4946KFTSA1
Виробник: Infineon Technologies
Description: IC HALL EFFECT LATCH SC59-3
товару немає в наявності
В кошику  од. на суму  грн.
IPB020NE7N3GATMA1 IPB020NE7N3_Rev2.2.pdf?folderId=db3a304313b8b5a60113cee8763b02d7&fileId=db3a304320d39d590121e31c838554d3
IPB020NE7N3GATMA1
Виробник: Infineon Technologies
Description: MOSFET N-CH 75V 120A D2PAK
Packaging: Tape & Reel (TR)
Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 120A (Tc)
Rds On (Max) @ Id, Vgs: 2mOhm @ 100A, 10V
Power Dissipation (Max): 300W (Tc)
Vgs(th) (Max) @ Id: 3.8V @ 273µA
Supplier Device Package: PG-TO263-3
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 75 V
Gate Charge (Qg) (Max) @ Vgs: 206 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 14400 pF @ 37.5 V
на замовлення 6000 шт:
термін постачання 21-31 дні (днів)
Кількість Ціна
1000+189.47 грн
Мінімальне замовлення: 1000
В кошику  од. на суму  грн.
BSC042NE7NS3GATMA1 BSC042NE7NS3G_Rev2.21.pdf?folderId=db3a304313b8b5a60113cee8763b02d7&fileId=db3a304320d39d590121a5f8baf30c25
BSC042NE7NS3GATMA1
Виробник: Infineon Technologies
Description: MOSFET N-CH 75V 19A/100A TDSON
Packaging: Cut Tape (CT)
Package / Case: 8-PowerTDFN
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 19A (Ta), 100A (Tc)
Rds On (Max) @ Id, Vgs: 4.2mOhm @ 50A, 10V
Power Dissipation (Max): 2.5W (Ta), 125W (Tc)
Vgs(th) (Max) @ Id: 3.8V @ 91µA
Supplier Device Package: PG-TDSON-8-1
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 75 V
Gate Charge (Qg) (Max) @ Vgs: 69 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 4800 pF @ 37.5 V
на замовлення 21088 шт:
термін постачання 21-31 дні (днів)
Кількість Ціна
2+218.06 грн
10+136.79 грн
100+94.92 грн
500+75.71 грн
Мінімальне замовлення: 2
В кошику  од. на суму  грн.
BSC077N12NS3 G BSC077N12NS3++Rev2.5.pdf?folderId=db3a304313b8b5a60113cee8763b02d7&fileId=db3a30432239cccd0122a7b3afe37d39
BSC077N12NS3 G
Виробник: Infineon Technologies
Description: MOSFET N-CH 120V 98A 8TDSON
на замовлення 34970 шт:
термін постачання 21-31 дні (днів)
В кошику  од. на суму  грн.
BSC100N10NSFGATMA1 BSC100N10NSF+Rev2.06.pdf?folderId=db3a304313b8b5a60113cee8763b02d7&fileId=db3a30431b3e89eb011b49a75b607b57
BSC100N10NSFGATMA1
Виробник: Infineon Technologies
Description: MOSFET N-CH 100V 11.4/90A 8TDSON
Packaging: Cut Tape (CT)
Package / Case: 8-PowerTDFN
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 11.4A (Ta), 90A (Tc)
Rds On (Max) @ Id, Vgs: 10mOhm @ 25A, 10V
Power Dissipation (Max): 156W (Tc)
Vgs(th) (Max) @ Id: 4V @ 110µA
Supplier Device Package: PG-TDSON-8-1
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 100 V
Gate Charge (Qg) (Max) @ Vgs: 44 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 2900 pF @ 50 V
на замовлення 5183 шт:
термін постачання 21-31 дні (днів)
Кількість Ціна
2+177.27 грн
10+109.98 грн
100+75.42 грн
500+56.96 грн
Мінімальне замовлення: 2
В кошику  од. на суму  грн.
BSC190N12NS3GATMA1 BSC190N12NS3+Rev2.5.pdf?folderId=db3a304313b8b5a60113cee8763b02d7&fileId=db3a30432239cccd0122a7bb1e767d49
BSC190N12NS3GATMA1
Виробник: Infineon Technologies
Description: MOSFET N-CH 120V 8.6A/44A TDSON
Packaging: Cut Tape (CT)
Package / Case: 8-PowerTDFN
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 8.6A (Ta), 44A (Tc)
Rds On (Max) @ Id, Vgs: 19mOhm @ 39A, 10V
Power Dissipation (Max): 69W (Tc)
Vgs(th) (Max) @ Id: 4V @ 42µA
Supplier Device Package: PG-TDSON-8-1
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 120 V
Gate Charge (Qg) (Max) @ Vgs: 34 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 2300 pF @ 60 V
на замовлення 10717 шт:
термін постачання 21-31 дні (днів)
Кількість Ціна
3+130.99 грн
10+80.67 грн
100+54.47 грн
500+40.58 грн
1000+38.02 грн
Мінімальне замовлення: 3
В кошику  од. на суму  грн.
BSC320N20NS3GATMA1 BSC320N20NS3+G+Rev2.2.pdf?folderId=db3a3043163797a6011637d4bae7003b&fileId=db3a3043243b5f17012495e37b301571
BSC320N20NS3GATMA1
Виробник: Infineon Technologies
Description: MOSFET N-CH 200V 36A TDSON-8
Packaging: Cut Tape (CT)
Package / Case: 8-PowerTDFN
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 36A (Tc)
Rds On (Max) @ Id, Vgs: 32mOhm @ 36A, 10V
Power Dissipation (Max): 125W (Tc)
Vgs(th) (Max) @ Id: 4V @ 90µA
Supplier Device Package: PG-TDSON-8-1
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 200 V
Gate Charge (Qg) (Max) @ Vgs: 29 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 2350 pF @ 100 V
на замовлення 14605 шт:
термін постачання 21-31 дні (днів)
Кількість Ціна
2+215.71 грн
10+135.43 грн
100+94.04 грн
500+75.24 грн
Мінімальне замовлення: 2
В кошику  од. на суму  грн.
BSC520N15NS3GATMA1 BSC520N15NS3+Rev2.2.pdf?folderId=db3a304313b8b5a60113cee8763b02d7&fileId=db3a30432239cccd0122eee57d9b21a4
BSC520N15NS3GATMA1
Виробник: Infineon Technologies
Description: MOSFET N-CH 150V 21A TDSON-8-5
Packaging: Cut Tape (CT)
Package / Case: 8-PowerTDFN
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 21A (Tc)
Rds On (Max) @ Id, Vgs: 52mOhm @ 18A, 10V
Power Dissipation (Max): 57W (Tc)
Vgs(th) (Max) @ Id: 4V @ 35µA
Supplier Device Package: PG-TDSON-8-5
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 8V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 150 V
Gate Charge (Qg) (Max) @ Vgs: 12 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 890 pF @ 75 V
на замовлення 33279 шт:
термін постачання 21-31 дні (днів)
Кількість Ціна
3+112.17 грн
10+68.21 грн
100+45.68 грн
500+33.79 грн
1000+30.87 грн
2000+30.41 грн
Мінімальне замовлення: 3
В кошику  од. на суму  грн.
BSC600N25NS3GATMA1 BSC600N25NS3+G+Rev2.3.pdf?folderId=db3a3043163797a6011637d4bae7003b&fileId=db3a3043243b5f17012496ab13871948
BSC600N25NS3GATMA1
Виробник: Infineon Technologies
Description: MOSFET N-CH 250V 25A TDSON-8-1
Packaging: Cut Tape (CT)
Package / Case: 8-PowerTDFN
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 25A (Tc)
Rds On (Max) @ Id, Vgs: 60mOhm @ 25A, 10V
Power Dissipation (Max): 125W (Tc)
Vgs(th) (Max) @ Id: 4V @ 90µA
Supplier Device Package: PG-TDSON-8-1
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 250 V
Gate Charge (Qg) (Max) @ Vgs: 29 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 2350 pF @ 100 V
на замовлення 12955 шт:
термін постачання 21-31 дні (днів)
Кількість Ціна
2+269.83 грн
10+170.93 грн
100+120.30 грн
500+101.85 грн
Мінімальне замовлення: 2
В кошику  од. на суму  грн.
BSZ520N15NS3GATMA1 BSZ520N15NS3+Rev2.2.pdf?folderId=db3a304326623792012669f6bee2224b&fileId=db3a30432662379201266a0dd612226c
BSZ520N15NS3GATMA1
Виробник: Infineon Technologies
Description: MOSFET N-CH 150V 21A 8TSDSON
Packaging: Cut Tape (CT)
Package / Case: 8-PowerTDFN
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 21A (Tc)
Rds On (Max) @ Id, Vgs: 52mOhm @ 18A, 10V
Power Dissipation (Max): 57W (Tc)
Vgs(th) (Max) @ Id: 4V @ 35µA
Supplier Device Package: PG-TSDSON-8
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 8V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 150 V
Gate Charge (Qg) (Max) @ Vgs: 12 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 890 pF @ 75 V
на замовлення 6859 шт:
термін постачання 21-31 дні (днів)
Кількість Ціна
3+138.84 грн
10+85.58 грн
100+57.91 грн
500+43.22 грн
1000+40.87 грн
Мінімальне замовлення: 3
В кошику  од. на суму  грн.
IPB017N06N3GATMA1 IPB017N06N3_Rev2.0.pdf?folderId=db3a30431441fb5d01148ca9f1be0e77&fileId=db3a30431ddc9372011e264a7ab746ea
IPB017N06N3GATMA1
Виробник: Infineon Technologies
Description: MOSFET N-CH 60V 180A TO263-7
Packaging: Cut Tape (CT)
Package / Case: TO-263-7, D2PAK (6 Leads + Tab)
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 180A (Tc)
Rds On (Max) @ Id, Vgs: 1.7mOhm @ 100A, 10V
Power Dissipation (Max): 250W (Tc)
Vgs(th) (Max) @ Id: 4V @ 196µA
Supplier Device Package: PG-TO263-7
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 60 V
Gate Charge (Qg) (Max) @ Vgs: 275 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 23000 pF @ 30 V
на замовлення 5663 шт:
термін постачання 21-31 дні (днів)
Кількість Ціна
2+309.05 грн
10+196.61 грн
100+139.34 грн
500+121.23 грн
Мінімальне замовлення: 2
В кошику  од. на суму  грн.
IPB034N06N3GATMA1 IPB034N06N3_G.pdf
IPB034N06N3GATMA1
Виробник: Infineon Technologies
Description: MOSFET N-CH 60V 100A TO263-7
Packaging: Cut Tape (CT)
Package / Case: TO-263-7, D2PAK (6 Leads + Tab)
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 100A (Tc)
Rds On (Max) @ Id, Vgs: 3.4mOhm @ 100A, 10V
Power Dissipation (Max): 167W (Tc)
Vgs(th) (Max) @ Id: 4V @ 93µA
Supplier Device Package: PG-TO263-7
Part Status: Obsolete
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 60 V
Gate Charge (Qg) (Max) @ Vgs: 130 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 11000 pF @ 30 V
товару немає в наявності
В кошику  од. на суму  грн.
IPB036N12N3 G IPB036N12N3+G_Rev2.2.pdf?folderId=db3a304313b8b5a60113cee8763b02d7&fileId=db3a304323b87bc20123c7030ed51f56
IPB036N12N3 G
Виробник: Infineon Technologies
Description: MOSFET N-CH 120V 180A TO263-7
на замовлення 5518 шт:
термін постачання 21-31 дні (днів)
В кошику  од. на суму  грн.
IPB038N12N3GATMA1 IPP_I_B041N12N3_Rev2.2.pdf?folderId=db3a304313b8b5a60113cee8763b02d7&fileId=db3a30432239cccd0122a75b86467ca4
IPB038N12N3GATMA1
Виробник: Infineon Technologies
Description: MOSFET N-CH 120V 120A D2PAK
Packaging: Cut Tape (CT)
Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 120A (Tc)
Rds On (Max) @ Id, Vgs: 3.8mOhm @ 100A, 10V
Power Dissipation (Max): 300W (Tc)
Vgs(th) (Max) @ Id: 4V @ 270µA
Supplier Device Package: PG-TO263-3
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 120 V
Gate Charge (Qg) (Max) @ Vgs: 211 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 13800 pF @ 60 V
на замовлення 1857 шт:
термін постачання 21-31 дні (днів)
Кількість Ціна
1+346.70 грн
10+221.92 грн
100+158.39 грн
500+141.63 грн
В кошику  од. на суму  грн.
IPB039N10N3GATMA1 IPB039N10N3+G_Rev2.1.pdf?folderId=db3a304313b8b5a60113cee8763b02d7&fileId=db3a30431ce5fb52011d1ed1fd3915e0
IPB039N10N3GATMA1
Виробник: Infineon Technologies
Description: MOSFET N-CH 100V 160A TO263-7
Packaging: Cut Tape (CT)
Package / Case: TO-263-7, D2PAK (6 Leads + Tab)
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 160A (Tc)
Rds On (Max) @ Id, Vgs: 3.9mOhm @ 100A, 10V
Power Dissipation (Max): 214W (Tc)
Vgs(th) (Max) @ Id: 3.5V @ 160µA
Supplier Device Package: PG-TO263-7
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 6V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 100 V
Gate Charge (Qg) (Max) @ Vgs: 117 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 8410 pF @ 50 V
на замовлення 20306 шт:
термін постачання 21-31 дні (днів)
Кількість Ціна
2+258.85 грн
10+163.76 грн
100+114.92 грн
500+96.30 грн
Мінімальне замовлення: 2
В кошику  од. на суму  грн.
IPB107N20N3GATMA1 IPP_I_110N20N3+G_IPB107N20N3+G+Rev2.2.pdf?folderId=db3a3043163797a6011637d4bae7003b&fileId=db3a3043243b5f170124968e7d1f18e7
IPB107N20N3GATMA1
Виробник: Infineon Technologies
Description: MOSFET N-CH 200V 88A D2PAK
Packaging: Cut Tape (CT)
Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 88A (Tc)
Rds On (Max) @ Id, Vgs: 10.7mOhm @ 88A, 10V
Power Dissipation (Max): 300W (Tc)
Vgs(th) (Max) @ Id: 4V @ 270µA
Supplier Device Package: PG-TO263-3
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 200 V
Gate Charge (Qg) (Max) @ Vgs: 87 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 7100 pF @ 100 V
на замовлення 4330 шт:
термін постачання 21-31 дні (днів)
Кількість Ціна
1+413.37 грн
10+266.79 грн
100+192.72 грн
500+180.24 грн
В кошику  од. на суму  грн.
IPB123N10N3GATMA1 Infineon-IPB123N10N3+G-DS-v02_03-EN.pdf?fileId=5546d4624fb7fef2014ffe55aac64b6e
IPB123N10N3GATMA1
Виробник: Infineon Technologies
Description: MOSFET N-CH 100V 58A D2PAK
Packaging: Cut Tape (CT)
Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 58A (Tc)
Rds On (Max) @ Id, Vgs: 12.3mOhm @ 46A, 10V
Power Dissipation (Max): 94W (Tc)
Vgs(th) (Max) @ Id: 3.5V @ 46µA
Supplier Device Package: PG-TO263-3
Drive Voltage (Max Rds On, Min Rds On): 6V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 100 V
Gate Charge (Qg) (Max) @ Vgs: 35 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 2500 pF @ 50 V
на замовлення 97 шт:
термін постачання 21-31 дні (днів)
Кількість Ціна
3+145.90 грн
10+90.04 грн
Мінімальне замовлення: 3
В кошику  од. на суму  грн.
IPB200N15N3 G IPD200N15N3_Rev2.02.pdf?folderId=db3a304313b8b5a60113cee7c66a02d6&fileId=db3a304319c6f18c0119cd1cc23279be
IPB200N15N3 G
Виробник: Infineon Technologies
Description: MOSFET N-CH 150V 50A TO263-3
на замовлення 4367 шт:
термін постачання 21-31 дні (днів)
В кошику  од. на суму  грн.
IPB200N25N3GATMA1 IPP_B_I_200N25N3+G+Rev2.2.pdf?folderId=db3a3043163797a6011637d4bae7003b&fileId=db3a3043243b5f17012496b87e9f1971
IPB200N25N3GATMA1
Виробник: Infineon Technologies
Description: MOSFET N-CH 250V 64A D2PAK
Packaging: Cut Tape (CT)
Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 64A (Tc)
Rds On (Max) @ Id, Vgs: 20mOhm @ 64A, 10V
Power Dissipation (Max): 300W (Tc)
Vgs(th) (Max) @ Id: 4V @ 270µA
Supplier Device Package: PG-TO263-3
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 250 V
Gate Charge (Qg) (Max) @ Vgs: 86 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 7100 pF @ 100 V
на замовлення 3185 шт:
термін постачання 21-31 дні (днів)
Кількість Ціна
1+495.73 грн
10+323.13 грн
100+244.42 грн
В кошику  од. на суму  грн.
IPB320N20N3GATMA1 IPP_B_I_320N20N3+G+Rev2.2.pdf?folderId=db3a3043163797a6011637d4bae7003b&fileId=db3a3043243b5f170124967064ba184a
IPB320N20N3GATMA1
Виробник: Infineon Technologies
Description: MOSFET N-CH 200V 34A D2PAK
Packaging: Cut Tape (CT)
Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 34A (Tc)
Rds On (Max) @ Id, Vgs: 32mOhm @ 34A, 10V
Power Dissipation (Max): 136W (Tc)
Vgs(th) (Max) @ Id: 4V @ 90µA
Supplier Device Package: PG-TO263-3
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 200 V
Gate Charge (Qg) (Max) @ Vgs: 29 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 2350 pF @ 100 V
на замовлення 5957 шт:
термін постачання 21-31 дні (днів)
Кількість Ціна
2+247.87 грн
10+156.28 грн
100+109.38 грн
500+90.55 грн
Мінімальне замовлення: 2
В кошику  од. на суму  грн.
IPB600N25N3GATMA1 IPP_B_600N25N3+G+Rev2.3.pdf?folderId=db3a3043163797a6011637d4bae7003b&fileId=db3a3043243b5f17012496c9548d199c
IPB600N25N3GATMA1
Виробник: Infineon Technologies
Description: MOSFET N-CH 250V 25A D2PAK
Packaging: Cut Tape (CT)
Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 25A (Tc)
Rds On (Max) @ Id, Vgs: 60mOhm @ 25A, 10V
Power Dissipation (Max): 136W (Tc)
Vgs(th) (Max) @ Id: 4V @ 90µA
Supplier Device Package: PG-TO263-3
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 250 V
Gate Charge (Qg) (Max) @ Vgs: 29 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 2350 pF @ 100 V
на замовлення 2844 шт:
термін постачання 21-31 дні (днів)
Кількість Ціна
2+238.45 грн
10+150.54 грн
100+105.13 грн
500+86.23 грн
Мінімальне замовлення: 2
В кошику  од. на суму  грн.
IPB60R099CPATMA1 IPB60R099CP_rev2.0.pdf?folderId=db3a304412b407950112b408e8c90004&fileId=db3a304412b407950112b42ded51491b
IPB60R099CPATMA1
Виробник: Infineon Technologies
Description: MOSFET N-CH 600V 31A TO263-3
Packaging: Cut Tape (CT)
Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 31A (Tc)
Rds On (Max) @ Id, Vgs: 99mOhm @ 18A, 10V
Power Dissipation (Max): 255W (Tc)
Vgs(th) (Max) @ Id: 3.5V @ 1.2mA
Supplier Device Package: PG-TO263-3-2
Part Status: Not For New Designs
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 600 V
Gate Charge (Qg) (Max) @ Vgs: 80 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 2800 pF @ 100 V
на замовлення 4360 шт:
термін постачання 21-31 дні (днів)
Кількість Ціна
1+398.47 грн
10+310.97 грн
100+239.91 грн
В кошику  од. на суму  грн.
IPB60R280C6ATMA1 IPB60R280C6_2_1.pdf?folderId=db3a3043163797a6011638933eda014b&fileId=db3a30432313ff5e0123a4413ff0274a
IPB60R280C6ATMA1
Виробник: Infineon Technologies
Description: MOSFET N-CH 600V 13.8A D2PAK
Packaging: Cut Tape (CT)
Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 13.8A (Tc)
Rds On (Max) @ Id, Vgs: 280mOhm @ 6.5A, 10V
Power Dissipation (Max): 104W (Tc)
Vgs(th) (Max) @ Id: 3.5V @ 430µA
Supplier Device Package: PG-TO263-3
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 600 V
Gate Charge (Qg) (Max) @ Vgs: 43 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 950 pF @ 100 V
товару немає в наявності
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IPB60R600CPATMA1 IPB60R600CP_rev2.0.pdf?folderId=db3a3043163797a6011637d4bae7003b&fileId=db3a3043183a95550118792f22ec0462
IPB60R600CPATMA1
Виробник: Infineon Technologies
Description: MOSFET N-CH 600V 6.1A D2PAK
Packaging: Cut Tape (CT)
Package / Case: TO-263-3, D²Pak (2 Leads + Tab), TO-263AB
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 6.1A (Tc)
Rds On (Max) @ Id, Vgs: 600mOhm @ 3.3A, 10V
Power Dissipation (Max): 60W (Tc)
Vgs(th) (Max) @ Id: 3.5V @ 220µA
Supplier Device Package: PG-TO263-3
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 600 V
Gate Charge (Qg) (Max) @ Vgs: 27 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 550 pF @ 100 V
товару немає в наявності
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IPD110N12N3GBUMA1 IPD_S110N12N3_G.pdf
IPD110N12N3GBUMA1
Виробник: Infineon Technologies
Description: MOSFET N-CH 120V 75A TO252-3
Packaging: Cut Tape (CT)
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 75A (Tc)
Rds On (Max) @ Id, Vgs: 11mOhm @ 75A, 10V
Power Dissipation (Max): 136W (Tc)
Vgs(th) (Max) @ Id: 4V @ 83µA
Supplier Device Package: PG-TO252-3
Part Status: Obsolete
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 120 V
Gate Charge (Qg) (Max) @ Vgs: 65 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 4310 pF @ 60 V
товару немає в наявності
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IPD320N20N3GBTMA1 Infineon-IPD320N20N3+G-DS-v02_03-en.pdf?fileId=db3a3043243b5f1701249669796017f3
IPD320N20N3GBTMA1
Виробник: Infineon Technologies
Description: MOSFET N-CH 200V 34A TO252-3
Packaging: Cut Tape (CT)
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 34A (Tc)
Rds On (Max) @ Id, Vgs: 32mOhm @ 34A, 10V
Power Dissipation (Max): 136W (Tc)
Vgs(th) (Max) @ Id: 4V @ 90µA
Supplier Device Package: PG-TO252-3
Part Status: Obsolete
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 200 V
Gate Charge (Qg) (Max) @ Vgs: 29 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 2350 pF @ 100 V
товару немає в наявності
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IPD600N25N3GBTMA1 Infineon-IPD600N25N3G_-DS-v02_03-en.pdf?fileId=db3a3043243b5f17012496b03c67195b
IPD600N25N3GBTMA1
Виробник: Infineon Technologies
Description: MOSFET N-CH 250V 25A TO252-3
Packaging: Cut Tape (CT)
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 25A (Tc)
Rds On (Max) @ Id, Vgs: 60mOhm @ 25A, 10V
Power Dissipation (Max): 136W (Tc)
Vgs(th) (Max) @ Id: 4V @ 90µA
Supplier Device Package: PG-TO252-3
Part Status: Obsolete
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 250 V
Gate Charge (Qg) (Max) @ Vgs: 29 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 2350 pF @ 100 V
товару немає в наявності
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BSC077N12NS3 G BSC077N12NS3++Rev2.5.pdf?folderId=db3a304313b8b5a60113cee8763b02d7&fileId=db3a30432239cccd0122a7b3afe37d39
BSC077N12NS3 G
Виробник: Infineon Technologies
Description: MOSFET N-CH 120V 98A 8TDSON
на замовлення 34970 шт:
термін постачання 21-31 дні (днів)
В кошику  од. на суму  грн.
IPB036N12N3 G IPB036N12N3+G_Rev2.2.pdf?folderId=db3a304313b8b5a60113cee8763b02d7&fileId=db3a304323b87bc20123c7030ed51f56
IPB036N12N3 G
Виробник: Infineon Technologies
Description: MOSFET N-CH 120V 180A TO263-7
на замовлення 5518 шт:
термін постачання 21-31 дні (днів)
В кошику  од. на суму  грн.
IPB200N15N3 G IPD200N15N3_Rev2.02.pdf?folderId=db3a304313b8b5a60113cee7c66a02d6&fileId=db3a304319c6f18c0119cd1cc23279be
IPB200N15N3 G
Виробник: Infineon Technologies
Description: MOSFET N-CH 150V 50A TO263-3
на замовлення 4367 шт:
термін постачання 21-31 дні (днів)
В кошику  од. на суму  грн.
IR11672ASPBF ir11672aspbf.pdf?fileId=5546d462533600a4015355c455561653
IR11672ASPBF
Виробник: Infineon Technologies
Description: IC MOSFET DRIVER 200V 8-SOIC
Packaging: Tube
Package / Case: 8-SOIC (0.154", 3.90mm Width)
Mounting Type: Surface Mount
Voltage - Input: 200V
Operating Temperature: -25°C ~ 125°C (TJ)
Voltage - Supply: 11.4V ~ 18V
Applications: Secondary-Side Controller
Supplier Device Package: 8-SOIC
Part Status: Discontinued at Digi-Key
Current - Supply: 50 mA
DigiKey Programmable: Not Verified
товару немає в наявності
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IR11682STRPBF ir11682spbf.pdf?fileId=5546d462533600a4015355c47188165a
IR11682STRPBF
Виробник: Infineon Technologies
Description: IC SECONDARY SIDE CTRLR 8SOIC
Packaging: Tape & Reel (TR)
Package / Case: 8-SOIC (0.154", 3.90mm Width)
Mounting Type: Surface Mount
Operating Temperature: -25°C ~ 125°C
Voltage - Supply: 8.6V ~ 18V
Applications: Secondary-Side Controller, Synchronous Rectifier
Supplier Device Package: 8-SOIC
Part Status: Active
Current - Supply: 48 mA
DigiKey Programmable: Not Verified
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IR1168SPBF ir1168.pdf?fileId=5546d462533600a4015355c467fa1658
IR1168SPBF
Виробник: Infineon Technologies
Description: IC SECONDARY SIDE CTRLR 8SOIC
Packaging: Tube
Package / Case: 8-SOIC (0.154", 3.90mm Width)
Mounting Type: Surface Mount
Operating Temperature: -25°C ~ 125°C
Voltage - Supply: 8.6V ~ 18V
Applications: Secondary-Side Controller, Synchronous Rectifier
Supplier Device Package: 8-SOIC
Part Status: Discontinued at Digi-Key
Current - Supply: 48 mA
DigiKey Programmable: Not Verified
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IR2521DSTRPBF fundamentals-of-power-semiconductors
IR2521DSTRPBF
Виробник: Infineon Technologies
Description: IC BALLAST CTLR ADAPTIVE 8-SOIC
Packaging: Tape & Reel (TR)
Package / Case: 8-SOIC (0.154", 3.90mm Width)
Mounting Type: Surface Mount
Supplier Device Package: 8-SOIC
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IR3411SPBF Part_Number_Guide_Web.pdf
IR3411SPBF
Виробник: Infineon Technologies
Description: IC SWITCH HIGH SIDE D2PAK-5
Packaging: Tube
товару немає в наявності
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