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IRS21858SPBF IRS21858SPBF Infineon Technologies Part_Number_Guide_Web.pdf Description: IC GATE DRVR HIGH-SIDE 16SOIC
Packaging: Tube
Package / Case: 16-SOIC (0.154", 3.90mm Width)
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Voltage - Supply: 10V ~ 20V
Input Type: Non-Inverting
High Side Voltage - Max (Bootstrap): 600 V
Supplier Device Package: 16-SOIC
Rise / Fall Time (Typ): 60ns, 20ns
Channel Type: Independent
Driven Configuration: High-Side
Number of Drivers: 2
Gate Type: IGBT, N-Channel MOSFET
Logic Voltage - VIL, VIH: 0.8V, 3.5V
Current - Peak Output (Source, Sink): 290mA, 600mA
Part Status: Obsolete
DigiKey Programmable: Not Verified
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IRS2301SPBF IRS2301SPBF Infineon Technologies IRSDS10790-1.pdf?t.download=true&u=5oefqw Description: IC GATE DRVR HALF-BRIDGE 8SOIC
Packaging: Tube
Package / Case: 8-SOIC (0.154", 3.90mm Width)
Mounting Type: Surface Mount
Operating Temperature: -40°C ~ 150°C (TJ)
Voltage - Supply: 5V ~ 20V
Input Type: Non-Inverting
High Side Voltage - Max (Bootstrap): 600 V
Supplier Device Package: 8-SOIC
Rise / Fall Time (Typ): 130ns, 50ns
Channel Type: Independent
Driven Configuration: Half-Bridge
Number of Drivers: 2
Gate Type: IGBT, MOSFET (N-Channel)
Logic Voltage - VIL, VIH: 0.8V, 2.5V
Current - Peak Output (Source, Sink): 200mA, 350mA
Part Status: Last Time Buy
DigiKey Programmable: Not Verified
на замовлення 1408 шт:
термін постачання 21-31 дні (днів)
4+102.29 грн
10+72.00 грн
95+58.19 грн
190+52.00 грн
285+50.69 грн
570+48.78 грн
1045+46.60 грн
Мінімальне замовлення: 4 шт
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IRS2330SPBF IRS2330SPBF Infineon Technologies fundamentals-of-power-semiconductors Description: IC GATE DRVR HALF-BRIDGE 28SOIC
Packaging: Tube
Package / Case: 28-SOIC (0.295", 7.50mm Width)
Mounting Type: Surface Mount
Operating Temperature: -40°C ~ 150°C (TJ)
Voltage - Supply: 10V ~ 20V
Input Type: Inverting
High Side Voltage - Max (Bootstrap): 600 V
Supplier Device Package: 28-SOIC
Rise / Fall Time (Typ): 80ns, 35ns
Channel Type: 3-Phase
Driven Configuration: Half-Bridge
Number of Drivers: 6
Gate Type: IGBT, MOSFET (N-Channel)
Logic Voltage - VIL, VIH: 0.8V, 2.2V
Current - Peak Output (Source, Sink): 250mA, 500mA
Part Status: Obsolete
DigiKey Programmable: Not Verified
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IRS2332DSPBF IRS2332DSPBF Infineon Technologies fundamentals-of-power-semiconductors Description: IC GATE DRVR HALF-BRIDGE 28SOIC
Packaging: Tube
Package / Case: 28-SOIC (0.295", 7.50mm Width)
Mounting Type: Surface Mount
Operating Temperature: -40°C ~ 150°C (TJ)
Voltage - Supply: 10V ~ 20V
Input Type: Inverting
High Side Voltage - Max (Bootstrap): 600 V
Supplier Device Package: 28-SOIC
Rise / Fall Time (Typ): 80ns, 35ns
Channel Type: 3-Phase
Driven Configuration: Half-Bridge
Number of Drivers: 6
Gate Type: IGBT, MOSFET (N-Channel)
Logic Voltage - VIL, VIH: 0.8V, 2.2V
Current - Peak Output (Source, Sink): 250mA, 500mA
Part Status: Obsolete
DigiKey Programmable: Not Verified
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IRS2573DSTRPBF IRS2573DSTRPBF Infineon Technologies irs2573dspbf.pdf?fileId=5546d462533600a40153567b288c2835 Description: IC HID LAMP CNTRL 240HZ 28SOIC
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IRS26072DSPBF IRS26072DSPBF Infineon Technologies Part_Number_Guide_Web.pdf Description: IC GATE DRVR HALF-BRIDGE 8SOIC
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IRS4426STRPBF IRS4426STRPBF Infineon Technologies IRSDS11546-1.pdf?t.download=true&u=5oefqw Description: IC GATE DRVR LOW-SIDE 8SOIC
Packaging: Tape & Reel (TR)
Package / Case: 8-SOIC (0.154", 3.90mm Width)
Mounting Type: Surface Mount
Operating Temperature: -40°C ~ 150°C (TJ)
Voltage - Supply: 6V ~ 20V
Input Type: Inverting
Supplier Device Package: 8-SOIC
Rise / Fall Time (Typ): 25ns, 25ns
Channel Type: Independent
Driven Configuration: Low-Side
Number of Drivers: 2
Gate Type: IGBT, MOSFET (N-Channel)
Logic Voltage - VIL, VIH: 0.8V, 2.5V
Current - Peak Output (Source, Sink): 2.3A, 3.3A
Part Status: Active
DigiKey Programmable: Not Verified
на замовлення 2500 шт:
термін постачання 21-31 дні (днів)
2500+34.48 грн
Мінімальне замовлення: 2500 шт
В кошику  од. на суму  грн.
IRS4427SPBF IRS4427SPBF Infineon Technologies IRSDS11546-1.pdf?t.download=true&u=5oefqw Description: IC GATE DRVR LOW-SIDE 8SOIC
Packaging: Tube
Package / Case: 8-SOIC (0.154", 3.90mm Width)
Mounting Type: Surface Mount
Operating Temperature: -40°C ~ 150°C (TJ)
Voltage - Supply: 6V ~ 20V
Input Type: Non-Inverting
Supplier Device Package: 8-SOIC
Rise / Fall Time (Typ): 25ns, 25ns
Channel Type: Independent
Driven Configuration: Low-Side
Number of Drivers: 2
Gate Type: IGBT, MOSFET (N-Channel)
Logic Voltage - VIL, VIH: 0.8V, 2.5V
Current - Peak Output (Source, Sink): 2.3A, 3.3A
Part Status: Obsolete
DigiKey Programmable: Not Verified
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IRS4428STRPBF IRS4428STRPBF Infineon Technologies IRSDS11546-1.pdf?t.download=true&u=5oefqw Description: IC GATE DRVR LOW-SIDE 8SOIC
Packaging: Tape & Reel (TR)
Package / Case: 8-SOIC (0.154", 3.90mm Width)
Mounting Type: Surface Mount
Operating Temperature: -40°C ~ 150°C (TJ)
Voltage - Supply: 6V ~ 20V
Input Type: Inverting, Non-Inverting
Supplier Device Package: 8-SOIC
Rise / Fall Time (Typ): 25ns, 25ns
Channel Type: Independent
Driven Configuration: Low-Side
Number of Drivers: 2
Gate Type: IGBT, MOSFET (N-Channel)
Logic Voltage - VIL, VIH: 0.8V, 2.5V
Current - Peak Output (Source, Sink): 2.3A, 3.3A
Part Status: Active
DigiKey Programmable: Not Verified
на замовлення 2500 шт:
термін постачання 21-31 дні (днів)
2500+35.28 грн
Мінімальне замовлення: 2500 шт
В кошику  од. на суму  грн.
IR11682STRPBF IR11682STRPBF Infineon Technologies ir11682spbf.pdf?fileId=5546d462533600a4015355c47188165a Description: IC SECONDARY SIDE CTRLR 8SOIC
Packaging: Cut Tape (CT)
Package / Case: 8-SOIC (0.154", 3.90mm Width)
Mounting Type: Surface Mount
Operating Temperature: -25°C ~ 125°C
Voltage - Supply: 8.6V ~ 18V
Applications: Secondary-Side Controller, Synchronous Rectifier
Supplier Device Package: 8-SOIC
Part Status: Active
Current - Supply: 48 mA
DigiKey Programmable: Not Verified
на замовлення 2870 шт:
термін постачання 21-31 дні (днів)
2+186.34 грн
10+133.32 грн
25+121.89 грн
100+102.58 грн
250+96.96 грн
500+94.71 грн
Мінімальне замовлення: 2 шт
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IR3529MTRPBF IR3529MTRPBF Infineon Technologies fundamentals-of-power-semiconductors Description: IC CTRL XPHASE CPU/ASIC 20-MLPQ
Packaging: Cut Tape (CT)
Package / Case: 20-VFQFN Exposed Pad
Mounting Type: Surface Mount
Operating Temperature: 0°C ~ 125°C
Voltage - Supply: 8V ~ 16V
Applications: Multiphase Controller
Current - Supply: 2mA
Supplier Device Package: 20-MLPQ (4x4)
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IRF6706S2TR1PBF IRF6706S2TR1PBF Infineon Technologies IRF6706S2TR%281%29PbF.pdf Description: MOSFET N-CH 25V 17A DIRECTFET
Packaging: Cut Tape (CT)
Package / Case: DirectFET™ Isometric S1
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 17A (Ta), 63A (Tc)
Rds On (Max) @ Id, Vgs: 3.8mOhm @ 17A, 10V
Power Dissipation (Max): 1.8W (Ta), 26W (Tc)
Vgs(th) (Max) @ Id: 2.35V @ 25µA
Supplier Device Package: DirectFET™ Isometric S1
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 25 V
Gate Charge (Qg) (Max) @ Vgs: 20 nC @ 4.5 V
Input Capacitance (Ciss) (Max) @ Vds: 1810 pF @ 13 V
на замовлення 838 шт:
термін постачання 21-31 дні (днів)
5+74.54 грн
10+61.31 грн
100+54.41 грн
Мінімальне замовлення: 5 шт
В кошику  од. на суму  грн.
IRF6794MTR1PBF IRF6794MTR1PBF Infineon Technologies IRF6794M%28TR%291PBF.pdf Description: MOSFET N-CH 25V 32A DIRECTFET
Packaging: Cut Tape (CT)
Package / Case: DirectFET™ Isometric MX
Mounting Type: Surface Mount
Operating Temperature: -40°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 32A (Ta), 200A (Tc)
Rds On (Max) @ Id, Vgs: 1.7mOhm @ 32A, 10V
FET Feature: Schottky Diode (Body)
Power Dissipation (Max): 2.8W (Ta), 100W (Tc)
Vgs(th) (Max) @ Id: 2.35V @ 100µA
Supplier Device Package: DIRECTFET™ MX
Part Status: Obsolete
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 25 V
Gate Charge (Qg) (Max) @ Vgs: 47 nC @ 4.5 V
Input Capacitance (Ciss) (Max) @ Vds: 4420 pF @ 13 V
на замовлення 300 шт:
термін постачання 21-31 дні (днів)
1+350.47 грн
10+223.04 грн
100+158.35 грн
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IRF6798MTR1PBF IRF6798MTR1PBF Infineon Technologies IRF6798M(TR)PbF.pdf Description: MOSFET N-CH 25V 37A DIRECTFET
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IRF7316GTRPBF IRF7316GTRPBF Infineon Technologies IRF7316GPBF.pdf Description: MOSFET 2P-CH 30V 4.9A 8SO
Packaging: Cut Tape (CT)
Package / Case: 8-SOIC (0.154", 3.90mm Width)
Mounting Type: Surface Mount
Configuration: 2 P-Channel (Dual)
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
Power - Max: 2W
Drain to Source Voltage (Vdss): 30V
Current - Continuous Drain (Id) @ 25°C: 4.9A
Input Capacitance (Ciss) (Max) @ Vds: 710pF @ 25V
Rds On (Max) @ Id, Vgs: 58mOhm @ 4.9A, 10V
Gate Charge (Qg) (Max) @ Vgs: 34nC @ 10V
FET Feature: Logic Level Gate
Vgs(th) (Max) @ Id: 1V @ 250µA
Supplier Device Package: 8-SO
Part Status: Obsolete
на замовлення 1852 шт:
термін постачання 21-31 дні (днів)
3+140.35 грн
10+85.67 грн
100+57.31 грн
500+42.35 грн
1000+38.67 грн
Мінімальне замовлення: 3 шт
В кошику  од. на суму  грн.
IRF7811WGTRPBF IRF7811WGTRPBF Infineon Technologies irf7811wgpbf.pdf Description: MOSFET N-CH 30V 14A 8SO
Packaging: Cut Tape (CT)
Package / Case: 8-SOIC (0.154", 3.90mm Width)
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 14A (Ta)
Rds On (Max) @ Id, Vgs: 12mOhm @ 15A, 4.5V
Power Dissipation (Max): 3.1W (Ta)
Vgs(th) (Max) @ Id: 1V @ 250µA
Supplier Device Package: 8-SO
Part Status: Obsolete
Drive Voltage (Max Rds On, Min Rds On): 4.5V
Vgs (Max): ±12V
Drain to Source Voltage (Vdss): 30 V
Gate Charge (Qg) (Max) @ Vgs: 33 nC @ 5 V
Input Capacitance (Ciss) (Max) @ Vds: 2335 pF @ 16 V
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IRF7821GTRPBF IRF7821GTRPBF Infineon Technologies IRF7821GPBF.pdf Description: MOSFET N-CH 30V 13.6A 8SO
Packaging: Cut Tape (CT)
Package / Case: 8-SOIC (0.154", 3.90mm Width)
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 155°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 13.6A (Ta)
Rds On (Max) @ Id, Vgs: 9.1mOhm @ 13A, 10V
Power Dissipation (Max): 2.5W (Ta)
Vgs(th) (Max) @ Id: 1V @ 250µA
Supplier Device Package: 8-SO
Part Status: Obsolete
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 30 V
Gate Charge (Qg) (Max) @ Vgs: 14 nC @ 4.5 V
Input Capacitance (Ciss) (Max) @ Vds: 1010 pF @ 15 V
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IRF8852TRPBF IRF8852TRPBF Infineon Technologies IRF8852PBF.pdf Description: MOSFET 2N-CH 25V 7.8A 8TSSOP
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IRF9317TRPBF IRF9317TRPBF Infineon Technologies infineon-irf9317-datasheet-en.pdf Description: MOSFET P-CH 30V 16A 8SO
Packaging: Cut Tape (CT)
Package / Case: 8-SOIC (0.154", 3.90mm Width)
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: P-Channel
Current - Continuous Drain (Id) @ 25°C: 16A (Ta)
Rds On (Max) @ Id, Vgs: 6.6mOhm @ 16A, 10V
Power Dissipation (Max): 2.5W (Ta)
Vgs(th) (Max) @ Id: 2.4V @ 50µA
Supplier Device Package: 8-SO
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 30 V
Gate Charge (Qg) (Max) @ Vgs: 92 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 2820 pF @ 15 V
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IRF9321TRPBF IRF9321TRPBF Infineon Technologies irf9321pbf.pdf?fileId=5546d462533600a40153561125fc1d9b Description: MOSFET P-CH 30V 15A 8SO
Packaging: Cut Tape (CT)
Package / Case: 8-SOIC (0.154", 3.90mm Width)
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: P-Channel
Current - Continuous Drain (Id) @ 25°C: 15A (Ta)
Rds On (Max) @ Id, Vgs: 7.2mOhm @ 15A, 10V
Power Dissipation (Max): 2.5W (Ta)
Vgs(th) (Max) @ Id: 2.4V @ 50µA
Supplier Device Package: 8-SO
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 30 V
Gate Charge (Qg) (Max) @ Vgs: 98 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 2590 pF @ 25 V
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IRF9335TRPBF IRF9335TRPBF Infineon Technologies irf9335pbf.pdf?fileId=5546d462533600a40153561147881da3 Description: MOSFET P-CH 30V 5.4A 8SO
Packaging: Cut Tape (CT)
Package / Case: 8-SOIC (0.154", 3.90mm Width)
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: P-Channel
Current - Continuous Drain (Id) @ 25°C: 5.4A (Ta)
Rds On (Max) @ Id, Vgs: 59mOhm @ 5.4A, 10V
Power Dissipation (Max): 2.5W (Ta)
Vgs(th) (Max) @ Id: 2.4V @ 10µA
Supplier Device Package: 8-SO
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 30 V
Gate Charge (Qg) (Max) @ Vgs: 14 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 386 pF @ 25 V
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IRF9362TRPBF IRF9362TRPBF Infineon Technologies irf9362pbf.pdf?fileId=5546d462533600a40153561158c41da7 Description: MOSFET 2P-CH 30V 8A 8SO
Packaging: Cut Tape (CT)
Package / Case: 8-SOIC (0.154", 3.90mm Width)
Mounting Type: Surface Mount
Configuration: 2 P-Channel (Dual)
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
Power - Max: 2W
Drain to Source Voltage (Vdss): 30V
Current - Continuous Drain (Id) @ 25°C: 8A
Input Capacitance (Ciss) (Max) @ Vds: 1300pF @ 25V
Rds On (Max) @ Id, Vgs: 21mOhm @ 8A, 10V
Gate Charge (Qg) (Max) @ Vgs: 39nC @ 10V
FET Feature: Logic Level Gate
Vgs(th) (Max) @ Id: 2.4V @ 25µA
Supplier Device Package: 8-SO
Part Status: Active
на замовлення 4372 шт:
термін постачання 21-31 дні (днів)
4+87.22 грн
10+52.69 грн
100+34.68 грн
500+25.28 грн
1000+22.94 грн
2000+20.98 грн
Мінімальне замовлення: 4 шт
В кошику  од. на суму  грн.
IRF9388TRPBF IRF9388TRPBF Infineon Technologies irf9388pbf.pdf?fileId=5546d462533600a40153561170191dad Description: MOSFET P-CH 30V 12A 8SO
Packaging: Cut Tape (CT)
Package / Case: 8-SOIC (0.154", 3.90mm Width)
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: P-Channel
Current - Continuous Drain (Id) @ 25°C: 12A (Ta)
Rds On (Max) @ Id, Vgs: 8.5mOhm @ 12A, 20V
Power Dissipation (Max): 2.5W (Ta)
Vgs(th) (Max) @ Id: 2.4V @ 25µA
Supplier Device Package: 8-SO
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V, 20V
Vgs (Max): ±25V
Drain to Source Voltage (Vdss): 30 V
Gate Charge (Qg) (Max) @ Vgs: 52 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 1680 pF @ 25 V
на замовлення 20 шт:
термін постачання 21-31 дні (днів)
4+79.29 грн
10+47.72 грн
Мінімальне замовлення: 4 шт
В кошику  од. на суму  грн.
IRF9393TRPBF IRF9393TRPBF Infineon Technologies irf9393pbf.pdf?fileId=5546d462533600a401535611877d1db3 Description: MOSFET P-CH 30V 9.2A 8SO
Packaging: Cut Tape (CT)
Package / Case: 8-SOIC (0.154", 3.90mm Width)
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: P-Channel
Current - Continuous Drain (Id) @ 25°C: 9.2A (Ta)
Rds On (Max) @ Id, Vgs: 13.3mOhm @ 9.2A, 20V
Power Dissipation (Max): 2.5W (Ta)
Vgs(th) (Max) @ Id: 2.4V @ 25µA
Supplier Device Package: 8-SO
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V, 20V
Vgs (Max): ±25V
Drain to Source Voltage (Vdss): 30 V
Gate Charge (Qg) (Max) @ Vgs: 38 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 1110 pF @ 25 V
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IRFH5006TR2PBF IRFH5006TR2PBF Infineon Technologies irfh5006pbf.pdf?fileId=5546d462533600a40153561aa6561e96 Description: MOSFET N-CH 60V 100A 5X6 PQFN
Packaging: Cut Tape (CT)
Package / Case: 8-PowerTDFN
Mounting Type: Surface Mount
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 21A (Ta), 100A (Tc)
Rds On (Max) @ Id, Vgs: 4.1mOhm @ 50A, 10V
Vgs(th) (Max) @ Id: 4V @ 150µA
Supplier Device Package: 8-PQFN (5x6)
Part Status: Obsolete
Drain to Source Voltage (Vdss): 60 V
Gate Charge (Qg) (Max) @ Vgs: 100 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 4175 pF @ 30 V
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IRFH5007TR2PBF IRFH5007TR2PBF Infineon Technologies irfh5007pbf.pdf?fileId=5546d462533600a40153561aad861e98 Description: MOSFET N-CH 75V 17A 5X6 PQFN
Packaging: Cut Tape (CT)
Package / Case: 8-PowerTDFN
Mounting Type: Surface Mount
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 17A (Ta), 100A (Tc)
Rds On (Max) @ Id, Vgs: 5.9mOhm @ 50A, 10V
Vgs(th) (Max) @ Id: 4V @ 150µA
Supplier Device Package: 8-PQFN (5x6)
Part Status: Obsolete
Drain to Source Voltage (Vdss): 75 V
Gate Charge (Qg) (Max) @ Vgs: 98 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 4290 pF @ 25 V
товару немає в наявності
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IRFH5010TR2PBF IRFH5010TR2PBF Infineon Technologies irfh5010pbf.pdf?fileId=5546d462533600a40153561ab6f31e9a Description: MOSFET N-CH 100V 13A 5X6 PQFN
Packaging: Cut Tape (CT)
Package / Case: 8-PowerVDFN
Mounting Type: Surface Mount
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 13A (Ta), 100A (Tc)
Rds On (Max) @ Id, Vgs: 9mOhm @ 50A, 10V
Vgs(th) (Max) @ Id: 4V @ 150µA
Supplier Device Package: 8-PQFN (5x6)
Part Status: Obsolete
Drain to Source Voltage (Vdss): 100 V
Gate Charge (Qg) (Max) @ Vgs: 98 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 4340 pF @ 25 V
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IRFH5106TR2PBF IRFH5106TR2PBF Infineon Technologies irfh5106pbf.pdf?fileId=5546d462533600a40153561ae5e81ea6 Description: MOSFET N-CH 60V 100A 5X6 PQFN
Packaging: Cut Tape (CT)
Package / Case: 8-PowerVDFN
Mounting Type: Surface Mount
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 21A (Ta), 100A (Tc)
Rds On (Max) @ Id, Vgs: 5.6mOhm @ 50A, 10V
Vgs(th) (Max) @ Id: 4V @ 250µA
Supplier Device Package: 8-PQFN (5x6)
Part Status: Obsolete
Drain to Source Voltage (Vdss): 60 V
Gate Charge (Qg) (Max) @ Vgs: 75 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 3090 pF @ 25 V
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IRFH5110TR2PBF IRFH5110TR2PBF Infineon Technologies irfh5110pbf.pdf?fileId=5546d462533600a40153561aec951ea8 Description: MOSFET N-CH 100V 5X6 PQFN
Packaging: Cut Tape (CT)
Package / Case: 8-PowerVDFN
Mounting Type: Surface Mount
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 11A (Ta), 63A (Tc)
Rds On (Max) @ Id, Vgs: 12.4mOhm @ 37A, 10V
Vgs(th) (Max) @ Id: 4V @ 100µA
Supplier Device Package: 8-PQFN (5x6)
Part Status: Obsolete
Drain to Source Voltage (Vdss): 100 V
Gate Charge (Qg) (Max) @ Vgs: 72 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 3152 pF @ 25 V
товару немає в наявності
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IRFH5206TR2PBF IRFH5206TR2PBF Infineon Technologies irfh5206pbf.pdf?fileId=5546d462533600a40153561afcd01eac Description: MOSFET N-CH 60V 16A 5X6 PQFN
Packaging: Cut Tape (CT)
Package / Case: 8-PowerVDFN
Mounting Type: Surface Mount
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 16A (Ta), 89A (Tc)
Rds On (Max) @ Id, Vgs: 6.7mOhm @ 50A, 10V
Vgs(th) (Max) @ Id: 4V @ 100µA
Supplier Device Package: 8-PQFN (5x6)
Drain to Source Voltage (Vdss): 60 V
Gate Charge (Qg) (Max) @ Vgs: 60 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 2490 pF @ 25 V
товару немає в наявності
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IRFH5207TR2PBF IRFH5207TR2PBF Infineon Technologies irfh5207pbf.pdf?fileId=5546d462533600a40153561b05871eae Description: MOSFET N-CH 75V 5X6 PQFN
Packaging: Cut Tape (CT)
Package / Case: 8-PowerVDFN
Mounting Type: Surface Mount
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 13A (Ta), 71A (Tc)
Rds On (Max) @ Id, Vgs: 9.6mOhm @ 43A, 10V
Vgs(th) (Max) @ Id: 4V @ 100µA
Supplier Device Package: 8-PQFN (5x6)
Part Status: Obsolete
Drain to Source Voltage (Vdss): 75 V
Gate Charge (Qg) (Max) @ Vgs: 59 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 2474 pF @ 25 V
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IRFH5210TR2PBF IRFH5210TR2PBF Infineon Technologies irfh5210pbf.pdf?fileId=5546d462533600a40153561b0c461eb0 Description: MOSFET N-CH 100V 10A 5X6 PQFN
Packaging: Cut Tape (CT)
Package / Case: 8-PowerVDFN
Mounting Type: Surface Mount
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 10A (Ta), 55A (Tc)
Rds On (Max) @ Id, Vgs: 14.9mOhm @ 33A, 10V
Vgs(th) (Max) @ Id: 4V @ 100µA
Supplier Device Package: 8-PQFN (5x6)
Part Status: Obsolete
Drain to Source Voltage (Vdss): 100 V
Gate Charge (Qg) (Max) @ Vgs: 59 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 2570 pF @ 25 V
товару немає в наявності
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IRFH5406TR2PBF IRFH5406TR2PBF Infineon Technologies irfh5406pbf.pdf?fileId=5546d462533600a40153561e92861ece Description: MOSFET N-CH 60V 40A 5X6 PQFN
Packaging: Cut Tape (CT)
Package / Case: 8-PowerVDFN
Mounting Type: Surface Mount
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 11A (Ta), 40A (Tc)
Rds On (Max) @ Id, Vgs: 14.4mOhm @ 24A, 10V
Vgs(th) (Max) @ Id: 4V @ 50µA
Supplier Device Package: 8-PQFN (5x6)
Part Status: Obsolete
Drain to Source Voltage (Vdss): 60 V
Gate Charge (Qg) (Max) @ Vgs: 35 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 1256 pF @ 25 V
товару немає в наявності
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IRFH6200TR2PBF IRFH6200TR2PBF Infineon Technologies irfh6200pbf.pdf?fileId=5546d462533600a40153561e9b131ed0 Description: MOSFET N-CH 20V 100A 5X6 PQFN
Packaging: Cut Tape (CT)
Package / Case: 8-PowerVDFN
Mounting Type: Surface Mount
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 49A (Ta), 100A (Tc)
Rds On (Max) @ Id, Vgs: 0.95mOhm @ 50A, 10V
Vgs(th) (Max) @ Id: 1.1V @ 150µA
Supplier Device Package: 8-PQFN (5x6)
Drain to Source Voltage (Vdss): 20 V
Gate Charge (Qg) (Max) @ Vgs: 230 nC @ 4.5 V
Input Capacitance (Ciss) (Max) @ Vds: 10890 pF @ 10 V
товару немає в наявності
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IRFH7911TR2PBF IRFH7911TR2PBF Infineon Technologies irfh7911pbf.pdf?fileId=5546d462533600a40153561f3e731efa Description: MOSFET 2N-CH 30V 13A/28A PQFN
Packaging: Cut Tape (CT)
Package / Case: 18-PowerVQFN
Mounting Type: Surface Mount
Configuration: 2 N-Channel (Dual)
Technology: MOSFET (Metal Oxide)
Power - Max: 2.4W, 3.4W
Drain to Source Voltage (Vdss): 30V
Current - Continuous Drain (Id) @ 25°C: 13A, 28A
Input Capacitance (Ciss) (Max) @ Vds: 1060pF @ 15V
Rds On (Max) @ Id, Vgs: 8.6mOhm @ 12A, 10V
Gate Charge (Qg) (Max) @ Vgs: 12nC @ 4.5V
FET Feature: Logic Level Gate
Vgs(th) (Max) @ Id: 2.35V @ 25µA
Supplier Device Package: PQFN (5x6)
Part Status: Obsolete
товару немає в наявності
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IRFH7934TR2PBF IRFH7934TR2PBF Infineon Technologies irfh7934pbf.pdf?fileId=5546d462533600a40153561f63e41f05 Description: MOSFET N-CH 30V 24A 5X6 PQFN
товару немає в наявності
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IRFS3307ZTRLPBF IRFS3307ZTRLPBF Infineon Technologies irfs3307zpbf.pdf?fileId=5546d462533600a40153563691d7216c Description: MOSFET N-CH 75V 120A D2PAK
Packaging: Cut Tape (CT)
Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 120A (Tc)
Rds On (Max) @ Id, Vgs: 5.8mOhm @ 75A, 10V
Power Dissipation (Max): 230W (Tc)
Vgs(th) (Max) @ Id: 4V @ 150µA
Supplier Device Package: D2PAK
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 75 V
Gate Charge (Qg) (Max) @ Vgs: 110 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 4750 pF @ 50 V
товару немає в наявності
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IRG4BC30F-STRLP IRG4BC30F-STRLP Infineon Technologies IRG4BC30F.pdf Description: IGBT 600V 31A 100W D2PAK
Packaging: Cut Tape (CT)
Package / Case: TO-263-3, D²Pak (2 Leads + Tab), TO-263AB
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Input Type: Standard
Vce(on) (Max) @ Vge, Ic: 1.8V @ 15V, 17A
Supplier Device Package: D2PAK
Td (on/off) @ 25°C: 21ns/200ns
Switching Energy: 230µJ (on), 1.18mJ (off)
Test Condition: 480V, 17A, 23Ohm, 15V
Gate Charge: 51 nC
Part Status: Obsolete
Current - Collector (Ic) (Max): 31 A
Voltage - Collector Emitter Breakdown (Max): 600 V
Current - Collector Pulsed (Icm): 120 A
Power - Max: 100 W
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IRG4BC30F-STRRP IRG4BC30F-STRRP Infineon Technologies IRG4BC30F.pdf Description: IGBT 600V 31A 100W D2PAK
Packaging: Cut Tape (CT)
Package / Case: TO-263-3, D²Pak (2 Leads + Tab), TO-263AB
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Input Type: Standard
Vce(on) (Max) @ Vge, Ic: 1.8V @ 15V, 17A
Supplier Device Package: D2PAK
Td (on/off) @ 25°C: 21ns/200ns
Switching Energy: 230µJ (on), 1.18mJ (off)
Test Condition: 480V, 17A, 23Ohm, 15V
Gate Charge: 51 nC
Part Status: Obsolete
Current - Collector (Ic) (Max): 31 A
Voltage - Collector Emitter Breakdown (Max): 600 V
Current - Collector Pulsed (Icm): 120 A
Power - Max: 100 W
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IRG6S320UTRLPBF IRG6S320UTRLPBF Infineon Technologies IRG6S320UPbF.pdf Description: IGBT 330V 50A 114W D2PAK
товару немає в наявності
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IRG7S313UTRLPBF IRG7S313UTRLPBF Infineon Technologies IRG7S313UPbF.pdf Description: IGBT TRENCH 330V 40A D2PAK
Packaging: Cut Tape (CT)
Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
Mounting Type: Surface Mount
Input Type: Standard
Vce(on) (Max) @ Vge, Ic: 2.14V @ 15V, 60A
Supplier Device Package: D2PAK
IGBT Type: Trench
Td (on/off) @ 25°C: 1ns/65ns
Test Condition: 196V, 12A, 10Ohm
Gate Charge: 33 nC
Part Status: Obsolete
Current - Collector (Ic) (Max): 40 A
Voltage - Collector Emitter Breakdown (Max): 330 V
Power - Max: 78 W
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IRLH5034TR2PBF IRLH5034TR2PBF Infineon Technologies irlh5034pbf.pdf?fileId=5546d462533600a4015356636815259b Description: MOSFET N-CH 40V 100A 5X6 PQFN
Packaging: Cut Tape (CT)
Package / Case: 8-PowerVDFN
Mounting Type: Surface Mount
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 29A (Ta), 100A (Tc)
Rds On (Max) @ Id, Vgs: 2.4mOhm @ 50A, 10V
Vgs(th) (Max) @ Id: 2.5V @ 150µA
Supplier Device Package: 8-PQFN (5x6)
Drain to Source Voltage (Vdss): 40 V
Gate Charge (Qg) (Max) @ Vgs: 82 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 4730 pF @ 25 V
товару немає в наявності
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IRLH5036TR2PBF IRLH5036TR2PBF Infineon Technologies irlh5036pbf.pdf?fileId=5546d462533600a4015356637102259d Description: MOSFET N-CH 60V 100A 5X6 PQFN
Packaging: Cut Tape (CT)
Package / Case: 8-PowerVDFN
Mounting Type: Surface Mount
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 20A (Ta), 100A (Tc)
Rds On (Max) @ Id, Vgs: 4.4mOhm @ 50A, 10V
Vgs(th) (Max) @ Id: 2.5V @ 150µA
Supplier Device Package: 8-PQFN (5x6)
Part Status: Obsolete
Drain to Source Voltage (Vdss): 60 V
Gate Charge (Qg) (Max) @ Vgs: 90 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 5360 pF @ 25 V
товару немає в наявності
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IRLML0040TRPBF IRLML0040TRPBF Infineon Technologies irlml0040pbf.pdf?fileId=5546d462533600a401535664894825e4 Description: MOSFET N-CH 40V 3.6A SOT23
Packaging: Cut Tape (CT)
Package / Case: TO-236-3, SC-59, SOT-23-3
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 3.6A (Ta)
Rds On (Max) @ Id, Vgs: 56mOhm @ 3.6A, 10V
Power Dissipation (Max): 1.3W (Ta)
Vgs(th) (Max) @ Id: 2.5V @ 25µA
Supplier Device Package: Micro3™/SOT-23
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±16V
Drain to Source Voltage (Vdss): 40 V
Gate Charge (Qg) (Max) @ Vgs: 3.9 nC @ 4.5 V
Input Capacitance (Ciss) (Max) @ Vds: 266 pF @ 25 V
на замовлення 9000 шт:
термін постачання 21-31 дні (днів)
9+35.68 грн
15+21.46 грн
50+15.52 грн
100+12.75 грн
500+9.56 грн
Мінімальне замовлення: 9 шт
В кошику  од. на суму  грн.
IRLML5103GTRPBF IRLML5103GTRPBF Infineon Technologies irlml5103gpbf.pdf?fileId=5546d462533600a40153566844fd2615 Description: MOSFET P-CH 30V 0.76A SOT-23-3
Packaging: Cut Tape (CT)
Package / Case: TO-236-3, SC-59, SOT-23-3
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: P-Channel
Current - Continuous Drain (Id) @ 25°C: 760mA (Ta)
Rds On (Max) @ Id, Vgs: 600mOhm @ 600mA, 10V
Power Dissipation (Max): 540mW (Ta)
Vgs(th) (Max) @ Id: 1V @ 250µA
Supplier Device Package: Micro3™/SOT-23
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 30 V
Gate Charge (Qg) (Max) @ Vgs: 5.1 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 75 pF @ 25 V
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IRLML9303TRPBF IRLML9303TRPBF Infineon Technologies irlml9303pbf.pdf?fileId=5546d462533600a401535668ef1d2642 Description: MOSFET P-CH 30V 2.3A SOT23
Packaging: Cut Tape (CT)
Package / Case: TO-236-3, SC-59, SOT-23-3
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: P-Channel
Current - Continuous Drain (Id) @ 25°C: 2.3A (Ta)
Rds On (Max) @ Id, Vgs: 165mOhm @ 2.3A, 10V
Power Dissipation (Max): 1.25W (Ta)
Vgs(th) (Max) @ Id: 2.4V @ 10µA
Supplier Device Package: Micro3™/SOT-23
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 30 V
Gate Charge (Qg) (Max) @ Vgs: 2 nC @ 4.5 V
Input Capacitance (Ciss) (Max) @ Vds: 160 pF @ 25 V
на замовлення 10 шт:
термін постачання 21-31 дні (днів)
В кошику  од. на суму  грн.
IRLR8726TRPBF IRLR8726TRPBF Infineon Technologies irlr8726pbf.pdf?fileId=5546d462533600a40153567181dd26f7 Description: MOSFET N-CH 30V 86A DPAK
Packaging: Cut Tape (CT)
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 86A (Tc)
Rds On (Max) @ Id, Vgs: 5.8mOhm @ 25A, 10V
Power Dissipation (Max): 75W (Tc)
Vgs(th) (Max) @ Id: 2.35V @ 50µA
Supplier Device Package: TO-252AA (DPAK)
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 30 V
Gate Charge (Qg) (Max) @ Vgs: 23 nC @ 4.5 V
Input Capacitance (Ciss) (Max) @ Vds: 2150 pF @ 15 V
на замовлення 56213 шт:
термін постачання 21-31 дні (днів)
3+113.39 грн
10+68.72 грн
50+51.34 грн
100+42.92 грн
500+33.67 грн
Мінімальне замовлення: 3 шт
В кошику  од. на суму  грн.
IRS2573DSTRPBF IRS2573DSTRPBF Infineon Technologies irs2573dspbf.pdf?fileId=5546d462533600a40153567b288c2835 Description: IC HID LAMP CNTRL 240HZ 28SOIC
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В кошику  од. на суму  грн.
IRS4426STRPBF IRS4426STRPBF Infineon Technologies IRSDS11546-1.pdf?t.download=true&u=5oefqw Description: IC GATE DRVR LOW-SIDE 8SOIC
Packaging: Cut Tape (CT)
Package / Case: 8-SOIC (0.154", 3.90mm Width)
Mounting Type: Surface Mount
Operating Temperature: -40°C ~ 150°C (TJ)
Voltage - Supply: 6V ~ 20V
Input Type: Inverting
Supplier Device Package: 8-SOIC
Rise / Fall Time (Typ): 25ns, 25ns
Channel Type: Independent
Driven Configuration: Low-Side
Number of Drivers: 2
Gate Type: IGBT, MOSFET (N-Channel)
Logic Voltage - VIL, VIH: 0.8V, 2.5V
Current - Peak Output (Source, Sink): 2.3A, 3.3A
Part Status: Active
DigiKey Programmable: Not Verified
на замовлення 4425 шт:
термін постачання 21-31 дні (днів)
5+72.16 грн
10+50.01 грн
25+45.17 грн
100+37.41 грн
250+35.03 грн
500+33.59 грн
1000+31.88 грн
Мінімальне замовлення: 5 шт
В кошику  од. на суму  грн.
IRS4428STRPBF IRS4428STRPBF Infineon Technologies IRSDS11546-1.pdf?t.download=true&u=5oefqw Description: IC GATE DRVR LOW-SIDE 8SOIC
Packaging: Cut Tape (CT)
Package / Case: 8-SOIC (0.154", 3.90mm Width)
Mounting Type: Surface Mount
Operating Temperature: -40°C ~ 150°C (TJ)
Voltage - Supply: 6V ~ 20V
Input Type: Inverting, Non-Inverting
Supplier Device Package: 8-SOIC
Rise / Fall Time (Typ): 25ns, 25ns
Channel Type: Independent
Driven Configuration: Low-Side
Number of Drivers: 2
Gate Type: IGBT, MOSFET (N-Channel)
Logic Voltage - VIL, VIH: 0.8V, 2.5V
Current - Peak Output (Source, Sink): 2.3A, 3.3A
Part Status: Active
DigiKey Programmable: Not Verified
на замовлення 3693 шт:
термін постачання 21-31 дні (днів)
5+73.74 грн
10+51.16 грн
25+46.21 грн
100+38.27 грн
250+35.84 грн
500+34.37 грн
1000+32.62 грн
Мінімальне замовлення: 5 шт
В кошику  од. на суму  грн.
IR3840WMTRPBF IR3840WMTRPBF Infineon Technologies ir3840wm.pdf?fileId=5546d462533600a4015355d21b6217d3 Description: IC REG BUCK ADJ 12A 22QFN
Voltage - Output (Min/Fixed): 0.7V
Voltage - Input (Min): 1.5V
Voltage - Output (Max): 14.4V
Synchronous Rectifier: Yes
Supplier Device Package: 22-PQFN (5x6)
Topology: Buck
Voltage - Input (Max): 16V
Frequency - Switching: 225kHz ~ 1.65MHz
Output Configuration: Positive
Operating Temperature: -40°C ~ 125°C (TJ)
Current - Output: 12A
Function: Step-Down
Number of Outputs: 1
Mounting Type: Surface Mount
Output Type: Adjustable
Package / Case: 22-PowerVQFN
Packaging: Tape & Reel (TR)
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IR3841WMTRPBF IR3841WMTRPBF Infineon Technologies ir3841wm.pdf?fileId=5546d462533600a4015355d22bdc17d7 Description: IC REG BUCK ADJ 8A PQFN
Voltage - Output (Min/Fixed): 0.7V
Voltage - Input (Min): 1.5V
Voltage - Output (Max): 14.4V
Synchronous Rectifier: Yes
Supplier Device Package: PQFN (5x6)
Topology: Buck
Voltage - Input (Max): 16V
Frequency - Switching: 225kHz ~ 1.65MHz
Output Configuration: Positive
Operating Temperature: -40°C ~ 125°C (TJ)
Current - Output: 8A
Function: Step-Down
Number of Outputs: 1
Mounting Type: Surface Mount
Output Type: Adjustable
Package / Case: 15-PowerVQFN
Packaging: Tape & Reel (TR)
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IR3843WMTRPBF IR3843WMTRPBF Infineon Technologies ir3843wm.pdf?fileId=5546d462533600a4015355d5602f17ec Description: IC REG BUCK ADJ 2A PQFN
Packaging: Tape & Reel (TR)
Package / Case: 15-PowerVQFN
Output Type: Adjustable
Mounting Type: Surface Mount
Number of Outputs: 1
Function: Step-Down
Current - Output: 2A
Operating Temperature: -40°C ~ 125°C (TJ)
Output Configuration: Positive
Frequency - Switching: 225kHz ~ 1.65MHz
Voltage - Input (Max): 16V
Topology: Buck
Supplier Device Package: PQFN (5x6)
Synchronous Rectifier: Yes
Voltage - Output (Max): 14.4V
Voltage - Input (Min): 1.5V
Voltage - Output (Min/Fixed): 0.7V
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IR11662SPBF IR11662SPBF Infineon Technologies IR11662S.pdf Description: IC GATE DRVR LOW-SIDE 8SOIC
Part Status: Discontinued at Digi-Key
Current - Peak Output (Source, Sink): 1A, 4A
Logic Voltage - VIL, VIH: 2V, 2.15V
Gate Type: MOSFET (N-Channel)
Number of Drivers: 1
Driven Configuration: Low-Side
Channel Type: Single
Rise / Fall Time (Typ): 21ns, 10ns
Supplier Device Package: 8-SOIC
Input Type: Non-Inverting
Voltage - Supply: 11.4V ~ 18V
Operating Temperature: -25°C ~ 125°C (TJ)
Mounting Type: Surface Mount
Package / Case: 8-SOIC (0.154", 3.90mm Width)
Packaging: Tube
DigiKey Programmable: Not Verified
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IR11682SPBF IR11682SPBF Infineon Technologies ir11682spbf.pdf?fileId=5546d462533600a4015355c47188165a Description: IC SECONDARY SIDE CTRLR 8SOIC
Packaging: Tube
Package / Case: 8-SOIC (0.154", 3.90mm Width)
Mounting Type: Surface Mount
Operating Temperature: -25°C ~ 125°C
Voltage - Supply: 8.6V ~ 18V
Applications: Secondary-Side Controller, Synchronous Rectifier
Supplier Device Package: 8-SOIC
Part Status: Discontinued at Digi-Key
Current - Supply: 48 mA
DigiKey Programmable: Not Verified
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IR3840AMTRPBF IR3840AMTRPBF Infineon Technologies ir3840am.pdf?fileId=5546d462533600a4015355d20aff17cf Description: IC REG BUCK ADJ 14A PQFN
Packaging: Tape & Reel (TR)
Package / Case: 15-PowerVQFN
Output Type: Adjustable
Mounting Type: Surface Mount
Number of Outputs: 1
Function: Step-Down
Current - Output: 14A
Operating Temperature: -40°C ~ 125°C (TJ)
Output Configuration: Positive
Frequency - Switching: 225kHz ~ 1MHz
Voltage - Input (Max): 16V
Topology: Buck
Supplier Device Package: PQFN (5x6)
Synchronous Rectifier: Yes
Voltage - Output (Max): 14.4V
Voltage - Input (Min): 1.5V
Voltage - Output (Min/Fixed): 0.9V
товару немає в наявності
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IR3856WMTRPBF IR3856WMTRPBF Infineon Technologies IR3856WMPbF.pdf Description: IC REG BUCK ADJUSTABLE 6A 17PQFN
товару немає в наявності
 Мінімальне замовлення: 4000 шт
В кошику  од. на суму  грн.
IR3876MTRPBF IR3876MTRPBF Infineon Technologies IR3876MPBF.pdf Description: IC REG BUCK ADJUSTABLE 12A PQFN
Packaging: Tape & Reel (TR)
Package / Case: 17-PowerVQFN
Output Type: Adjustable
Mounting Type: Surface Mount
Number of Outputs: 1
Function: Step-Down
Current - Output: 12A
Operating Temperature: 0°C ~ 125°C (TJ)
Output Configuration: Positive
Frequency - Switching: Up to 1MHz
Voltage - Input (Max): 21V
Topology: Buck
Supplier Device Package: PQFN (5x6)
Synchronous Rectifier: Yes
Voltage - Output (Max): 12V
Voltage - Input (Min): 3V
Voltage - Output (Min/Fixed): 0.5V
Part Status: Obsolete
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IRF6706S2TRPBF IRF6706S2TRPBF Infineon Technologies IRF6706S2TR(1)PbF.pdf Description: MOSFET N-CH 25V 17A DIRECTFET
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IRF6794MTRPBF IRF6794MTRPBF Infineon Technologies IRF6794M(TR)1PBF.pdf Description: MOSFET N-CH 25V 32A DIRECTFET
Packaging: Tape & Reel (TR)
Package / Case: DirectFET™ Isometric MX
Mounting Type: Surface Mount
Operating Temperature: -40°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 32A (Ta), 200A (Tc)
Rds On (Max) @ Id, Vgs: 1.7mOhm @ 32A, 10V
FET Feature: Schottky Diode (Body)
Power Dissipation (Max): 2.8W (Ta), 100W (Tc)
Vgs(th) (Max) @ Id: 2.35V @ 100µA
Supplier Device Package: DIRECTFET™ MX
Part Status: Obsolete
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 25 V
Gate Charge (Qg) (Max) @ Vgs: 47 nC @ 4.5 V
Input Capacitance (Ciss) (Max) @ Vds: 4420 pF @ 13 V
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IRS21858SPBF Part_Number_Guide_Web.pdf
IRS21858SPBF
Виробник: Infineon Technologies
Description: IC GATE DRVR HIGH-SIDE 16SOIC
Packaging: Tube
Package / Case: 16-SOIC (0.154", 3.90mm Width)
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Voltage - Supply: 10V ~ 20V
Input Type: Non-Inverting
High Side Voltage - Max (Bootstrap): 600 V
Supplier Device Package: 16-SOIC
Rise / Fall Time (Typ): 60ns, 20ns
Channel Type: Independent
Driven Configuration: High-Side
Number of Drivers: 2
Gate Type: IGBT, N-Channel MOSFET
Logic Voltage - VIL, VIH: 0.8V, 3.5V
Current - Peak Output (Source, Sink): 290mA, 600mA
Part Status: Obsolete
DigiKey Programmable: Not Verified
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IRS2301SPBF IRSDS10790-1.pdf?t.download=true&u=5oefqw
IRS2301SPBF
Виробник: Infineon Technologies
Description: IC GATE DRVR HALF-BRIDGE 8SOIC
Packaging: Tube
Package / Case: 8-SOIC (0.154", 3.90mm Width)
Mounting Type: Surface Mount
Operating Temperature: -40°C ~ 150°C (TJ)
Voltage - Supply: 5V ~ 20V
Input Type: Non-Inverting
High Side Voltage - Max (Bootstrap): 600 V
Supplier Device Package: 8-SOIC
Rise / Fall Time (Typ): 130ns, 50ns
Channel Type: Independent
Driven Configuration: Half-Bridge
Number of Drivers: 2
Gate Type: IGBT, MOSFET (N-Channel)
Logic Voltage - VIL, VIH: 0.8V, 2.5V
Current - Peak Output (Source, Sink): 200mA, 350mA
Part Status: Last Time Buy
DigiKey Programmable: Not Verified
на замовлення 1408 шт:
термін постачання 21-31 дні (днів)
КількістьЦіна без ПДВ
4+102.29 грн
10+72.00 грн
95+58.19 грн
190+52.00 грн
285+50.69 грн
570+48.78 грн
1045+46.60 грн
Мінімальне замовлення: 4 шт
В кошику  од. на суму  грн.
IRS2330SPBF fundamentals-of-power-semiconductors
IRS2330SPBF
Виробник: Infineon Technologies
Description: IC GATE DRVR HALF-BRIDGE 28SOIC
Packaging: Tube
Package / Case: 28-SOIC (0.295", 7.50mm Width)
Mounting Type: Surface Mount
Operating Temperature: -40°C ~ 150°C (TJ)
Voltage - Supply: 10V ~ 20V
Input Type: Inverting
High Side Voltage - Max (Bootstrap): 600 V
Supplier Device Package: 28-SOIC
Rise / Fall Time (Typ): 80ns, 35ns
Channel Type: 3-Phase
Driven Configuration: Half-Bridge
Number of Drivers: 6
Gate Type: IGBT, MOSFET (N-Channel)
Logic Voltage - VIL, VIH: 0.8V, 2.2V
Current - Peak Output (Source, Sink): 250mA, 500mA
Part Status: Obsolete
DigiKey Programmable: Not Verified
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IRS2332DSPBF fundamentals-of-power-semiconductors
IRS2332DSPBF
Виробник: Infineon Technologies
Description: IC GATE DRVR HALF-BRIDGE 28SOIC
Packaging: Tube
Package / Case: 28-SOIC (0.295", 7.50mm Width)
Mounting Type: Surface Mount
Operating Temperature: -40°C ~ 150°C (TJ)
Voltage - Supply: 10V ~ 20V
Input Type: Inverting
High Side Voltage - Max (Bootstrap): 600 V
Supplier Device Package: 28-SOIC
Rise / Fall Time (Typ): 80ns, 35ns
Channel Type: 3-Phase
Driven Configuration: Half-Bridge
Number of Drivers: 6
Gate Type: IGBT, MOSFET (N-Channel)
Logic Voltage - VIL, VIH: 0.8V, 2.2V
Current - Peak Output (Source, Sink): 250mA, 500mA
Part Status: Obsolete
DigiKey Programmable: Not Verified
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IRS2573DSTRPBF irs2573dspbf.pdf?fileId=5546d462533600a40153567b288c2835
IRS2573DSTRPBF
Виробник: Infineon Technologies
Description: IC HID LAMP CNTRL 240HZ 28SOIC
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IRS26072DSPBF Part_Number_Guide_Web.pdf
IRS26072DSPBF
Виробник: Infineon Technologies
Description: IC GATE DRVR HALF-BRIDGE 8SOIC
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IRS4426STRPBF IRSDS11546-1.pdf?t.download=true&u=5oefqw
IRS4426STRPBF
Виробник: Infineon Technologies
Description: IC GATE DRVR LOW-SIDE 8SOIC
Packaging: Tape & Reel (TR)
Package / Case: 8-SOIC (0.154", 3.90mm Width)
Mounting Type: Surface Mount
Operating Temperature: -40°C ~ 150°C (TJ)
Voltage - Supply: 6V ~ 20V
Input Type: Inverting
Supplier Device Package: 8-SOIC
Rise / Fall Time (Typ): 25ns, 25ns
Channel Type: Independent
Driven Configuration: Low-Side
Number of Drivers: 2
Gate Type: IGBT, MOSFET (N-Channel)
Logic Voltage - VIL, VIH: 0.8V, 2.5V
Current - Peak Output (Source, Sink): 2.3A, 3.3A
Part Status: Active
DigiKey Programmable: Not Verified
на замовлення 2500 шт:
термін постачання 21-31 дні (днів)
КількістьЦіна без ПДВ
2500+34.48 грн
Мінімальне замовлення: 2500 шт
В кошику  од. на суму  грн.
IRS4427SPBF IRSDS11546-1.pdf?t.download=true&u=5oefqw
IRS4427SPBF
Виробник: Infineon Technologies
Description: IC GATE DRVR LOW-SIDE 8SOIC
Packaging: Tube
Package / Case: 8-SOIC (0.154", 3.90mm Width)
Mounting Type: Surface Mount
Operating Temperature: -40°C ~ 150°C (TJ)
Voltage - Supply: 6V ~ 20V
Input Type: Non-Inverting
Supplier Device Package: 8-SOIC
Rise / Fall Time (Typ): 25ns, 25ns
Channel Type: Independent
Driven Configuration: Low-Side
Number of Drivers: 2
Gate Type: IGBT, MOSFET (N-Channel)
Logic Voltage - VIL, VIH: 0.8V, 2.5V
Current - Peak Output (Source, Sink): 2.3A, 3.3A
Part Status: Obsolete
DigiKey Programmable: Not Verified
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IRS4428STRPBF IRSDS11546-1.pdf?t.download=true&u=5oefqw
IRS4428STRPBF
Виробник: Infineon Technologies
Description: IC GATE DRVR LOW-SIDE 8SOIC
Packaging: Tape & Reel (TR)
Package / Case: 8-SOIC (0.154", 3.90mm Width)
Mounting Type: Surface Mount
Operating Temperature: -40°C ~ 150°C (TJ)
Voltage - Supply: 6V ~ 20V
Input Type: Inverting, Non-Inverting
Supplier Device Package: 8-SOIC
Rise / Fall Time (Typ): 25ns, 25ns
Channel Type: Independent
Driven Configuration: Low-Side
Number of Drivers: 2
Gate Type: IGBT, MOSFET (N-Channel)
Logic Voltage - VIL, VIH: 0.8V, 2.5V
Current - Peak Output (Source, Sink): 2.3A, 3.3A
Part Status: Active
DigiKey Programmable: Not Verified
на замовлення 2500 шт:
термін постачання 21-31 дні (днів)
КількістьЦіна без ПДВ
2500+35.28 грн
Мінімальне замовлення: 2500 шт
В кошику  од. на суму  грн.
IR11682STRPBF ir11682spbf.pdf?fileId=5546d462533600a4015355c47188165a
IR11682STRPBF
Виробник: Infineon Technologies
Description: IC SECONDARY SIDE CTRLR 8SOIC
Packaging: Cut Tape (CT)
Package / Case: 8-SOIC (0.154", 3.90mm Width)
Mounting Type: Surface Mount
Operating Temperature: -25°C ~ 125°C
Voltage - Supply: 8.6V ~ 18V
Applications: Secondary-Side Controller, Synchronous Rectifier
Supplier Device Package: 8-SOIC
Part Status: Active
Current - Supply: 48 mA
DigiKey Programmable: Not Verified
на замовлення 2870 шт:
термін постачання 21-31 дні (днів)
КількістьЦіна без ПДВ
2+186.34 грн
10+133.32 грн
25+121.89 грн
100+102.58 грн
250+96.96 грн
500+94.71 грн
Мінімальне замовлення: 2 шт
В кошику  од. на суму  грн.
IR3529MTRPBF fundamentals-of-power-semiconductors
IR3529MTRPBF
Виробник: Infineon Technologies
Description: IC CTRL XPHASE CPU/ASIC 20-MLPQ
Packaging: Cut Tape (CT)
Package / Case: 20-VFQFN Exposed Pad
Mounting Type: Surface Mount
Operating Temperature: 0°C ~ 125°C
Voltage - Supply: 8V ~ 16V
Applications: Multiphase Controller
Current - Supply: 2mA
Supplier Device Package: 20-MLPQ (4x4)
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IRF6706S2TR1PBF IRF6706S2TR%281%29PbF.pdf
IRF6706S2TR1PBF
Виробник: Infineon Technologies
Description: MOSFET N-CH 25V 17A DIRECTFET
Packaging: Cut Tape (CT)
Package / Case: DirectFET™ Isometric S1
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 17A (Ta), 63A (Tc)
Rds On (Max) @ Id, Vgs: 3.8mOhm @ 17A, 10V
Power Dissipation (Max): 1.8W (Ta), 26W (Tc)
Vgs(th) (Max) @ Id: 2.35V @ 25µA
Supplier Device Package: DirectFET™ Isometric S1
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 25 V
Gate Charge (Qg) (Max) @ Vgs: 20 nC @ 4.5 V
Input Capacitance (Ciss) (Max) @ Vds: 1810 pF @ 13 V
на замовлення 838 шт:
термін постачання 21-31 дні (днів)
КількістьЦіна без ПДВ
5+74.54 грн
10+61.31 грн
100+54.41 грн
Мінімальне замовлення: 5 шт
В кошику  од. на суму  грн.
IRF6794MTR1PBF IRF6794M%28TR%291PBF.pdf
IRF6794MTR1PBF
Виробник: Infineon Technologies
Description: MOSFET N-CH 25V 32A DIRECTFET
Packaging: Cut Tape (CT)
Package / Case: DirectFET™ Isometric MX
Mounting Type: Surface Mount
Operating Temperature: -40°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 32A (Ta), 200A (Tc)
Rds On (Max) @ Id, Vgs: 1.7mOhm @ 32A, 10V
FET Feature: Schottky Diode (Body)
Power Dissipation (Max): 2.8W (Ta), 100W (Tc)
Vgs(th) (Max) @ Id: 2.35V @ 100µA
Supplier Device Package: DIRECTFET™ MX
Part Status: Obsolete
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 25 V
Gate Charge (Qg) (Max) @ Vgs: 47 nC @ 4.5 V
Input Capacitance (Ciss) (Max) @ Vds: 4420 pF @ 13 V
на замовлення 300 шт:
термін постачання 21-31 дні (днів)
КількістьЦіна без ПДВ
1+350.47 грн
10+223.04 грн
100+158.35 грн
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IRF6798MTR1PBF IRF6798M(TR)PbF.pdf
IRF6798MTR1PBF
Виробник: Infineon Technologies
Description: MOSFET N-CH 25V 37A DIRECTFET
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IRF7316GTRPBF IRF7316GPBF.pdf
IRF7316GTRPBF
Виробник: Infineon Technologies
Description: MOSFET 2P-CH 30V 4.9A 8SO
Packaging: Cut Tape (CT)
Package / Case: 8-SOIC (0.154", 3.90mm Width)
Mounting Type: Surface Mount
Configuration: 2 P-Channel (Dual)
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
Power - Max: 2W
Drain to Source Voltage (Vdss): 30V
Current - Continuous Drain (Id) @ 25°C: 4.9A
Input Capacitance (Ciss) (Max) @ Vds: 710pF @ 25V
Rds On (Max) @ Id, Vgs: 58mOhm @ 4.9A, 10V
Gate Charge (Qg) (Max) @ Vgs: 34nC @ 10V
FET Feature: Logic Level Gate
Vgs(th) (Max) @ Id: 1V @ 250µA
Supplier Device Package: 8-SO
Part Status: Obsolete
на замовлення 1852 шт:
термін постачання 21-31 дні (днів)
КількістьЦіна без ПДВ
3+140.35 грн
10+85.67 грн
100+57.31 грн
500+42.35 грн
1000+38.67 грн
Мінімальне замовлення: 3 шт
В кошику  од. на суму  грн.
IRF7811WGTRPBF irf7811wgpbf.pdf
IRF7811WGTRPBF
Виробник: Infineon Technologies
Description: MOSFET N-CH 30V 14A 8SO
Packaging: Cut Tape (CT)
Package / Case: 8-SOIC (0.154", 3.90mm Width)
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 14A (Ta)
Rds On (Max) @ Id, Vgs: 12mOhm @ 15A, 4.5V
Power Dissipation (Max): 3.1W (Ta)
Vgs(th) (Max) @ Id: 1V @ 250µA
Supplier Device Package: 8-SO
Part Status: Obsolete
Drive Voltage (Max Rds On, Min Rds On): 4.5V
Vgs (Max): ±12V
Drain to Source Voltage (Vdss): 30 V
Gate Charge (Qg) (Max) @ Vgs: 33 nC @ 5 V
Input Capacitance (Ciss) (Max) @ Vds: 2335 pF @ 16 V
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IRF7821GTRPBF IRF7821GPBF.pdf
IRF7821GTRPBF
Виробник: Infineon Technologies
Description: MOSFET N-CH 30V 13.6A 8SO
Packaging: Cut Tape (CT)
Package / Case: 8-SOIC (0.154", 3.90mm Width)
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 155°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 13.6A (Ta)
Rds On (Max) @ Id, Vgs: 9.1mOhm @ 13A, 10V
Power Dissipation (Max): 2.5W (Ta)
Vgs(th) (Max) @ Id: 1V @ 250µA
Supplier Device Package: 8-SO
Part Status: Obsolete
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 30 V
Gate Charge (Qg) (Max) @ Vgs: 14 nC @ 4.5 V
Input Capacitance (Ciss) (Max) @ Vds: 1010 pF @ 15 V
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IRF8852TRPBF IRF8852PBF.pdf
IRF8852TRPBF
Виробник: Infineon Technologies
Description: MOSFET 2N-CH 25V 7.8A 8TSSOP
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IRF9317TRPBF infineon-irf9317-datasheet-en.pdf
IRF9317TRPBF
Виробник: Infineon Technologies
Description: MOSFET P-CH 30V 16A 8SO
Packaging: Cut Tape (CT)
Package / Case: 8-SOIC (0.154", 3.90mm Width)
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: P-Channel
Current - Continuous Drain (Id) @ 25°C: 16A (Ta)
Rds On (Max) @ Id, Vgs: 6.6mOhm @ 16A, 10V
Power Dissipation (Max): 2.5W (Ta)
Vgs(th) (Max) @ Id: 2.4V @ 50µA
Supplier Device Package: 8-SO
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 30 V
Gate Charge (Qg) (Max) @ Vgs: 92 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 2820 pF @ 15 V
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IRF9321TRPBF irf9321pbf.pdf?fileId=5546d462533600a40153561125fc1d9b
IRF9321TRPBF
Виробник: Infineon Technologies
Description: MOSFET P-CH 30V 15A 8SO
Packaging: Cut Tape (CT)
Package / Case: 8-SOIC (0.154", 3.90mm Width)
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: P-Channel
Current - Continuous Drain (Id) @ 25°C: 15A (Ta)
Rds On (Max) @ Id, Vgs: 7.2mOhm @ 15A, 10V
Power Dissipation (Max): 2.5W (Ta)
Vgs(th) (Max) @ Id: 2.4V @ 50µA
Supplier Device Package: 8-SO
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 30 V
Gate Charge (Qg) (Max) @ Vgs: 98 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 2590 pF @ 25 V
товару немає в наявності
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IRF9335TRPBF irf9335pbf.pdf?fileId=5546d462533600a40153561147881da3
IRF9335TRPBF
Виробник: Infineon Technologies
Description: MOSFET P-CH 30V 5.4A 8SO
Packaging: Cut Tape (CT)
Package / Case: 8-SOIC (0.154", 3.90mm Width)
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: P-Channel
Current - Continuous Drain (Id) @ 25°C: 5.4A (Ta)
Rds On (Max) @ Id, Vgs: 59mOhm @ 5.4A, 10V
Power Dissipation (Max): 2.5W (Ta)
Vgs(th) (Max) @ Id: 2.4V @ 10µA
Supplier Device Package: 8-SO
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 30 V
Gate Charge (Qg) (Max) @ Vgs: 14 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 386 pF @ 25 V
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IRF9362TRPBF irf9362pbf.pdf?fileId=5546d462533600a40153561158c41da7
IRF9362TRPBF
Виробник: Infineon Technologies
Description: MOSFET 2P-CH 30V 8A 8SO
Packaging: Cut Tape (CT)
Package / Case: 8-SOIC (0.154", 3.90mm Width)
Mounting Type: Surface Mount
Configuration: 2 P-Channel (Dual)
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
Power - Max: 2W
Drain to Source Voltage (Vdss): 30V
Current - Continuous Drain (Id) @ 25°C: 8A
Input Capacitance (Ciss) (Max) @ Vds: 1300pF @ 25V
Rds On (Max) @ Id, Vgs: 21mOhm @ 8A, 10V
Gate Charge (Qg) (Max) @ Vgs: 39nC @ 10V
FET Feature: Logic Level Gate
Vgs(th) (Max) @ Id: 2.4V @ 25µA
Supplier Device Package: 8-SO
Part Status: Active
на замовлення 4372 шт:
термін постачання 21-31 дні (днів)
КількістьЦіна без ПДВ
4+87.22 грн
10+52.69 грн
100+34.68 грн
500+25.28 грн
1000+22.94 грн
2000+20.98 грн
Мінімальне замовлення: 4 шт
В кошику  од. на суму  грн.
IRF9388TRPBF irf9388pbf.pdf?fileId=5546d462533600a40153561170191dad
IRF9388TRPBF
Виробник: Infineon Technologies
Description: MOSFET P-CH 30V 12A 8SO
Packaging: Cut Tape (CT)
Package / Case: 8-SOIC (0.154", 3.90mm Width)
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: P-Channel
Current - Continuous Drain (Id) @ 25°C: 12A (Ta)
Rds On (Max) @ Id, Vgs: 8.5mOhm @ 12A, 20V
Power Dissipation (Max): 2.5W (Ta)
Vgs(th) (Max) @ Id: 2.4V @ 25µA
Supplier Device Package: 8-SO
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V, 20V
Vgs (Max): ±25V
Drain to Source Voltage (Vdss): 30 V
Gate Charge (Qg) (Max) @ Vgs: 52 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 1680 pF @ 25 V
на замовлення 20 шт:
термін постачання 21-31 дні (днів)
КількістьЦіна без ПДВ
4+79.29 грн
10+47.72 грн
Мінімальне замовлення: 4 шт
В кошику  од. на суму  грн.
IRF9393TRPBF irf9393pbf.pdf?fileId=5546d462533600a401535611877d1db3
IRF9393TRPBF
Виробник: Infineon Technologies
Description: MOSFET P-CH 30V 9.2A 8SO
Packaging: Cut Tape (CT)
Package / Case: 8-SOIC (0.154", 3.90mm Width)
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: P-Channel
Current - Continuous Drain (Id) @ 25°C: 9.2A (Ta)
Rds On (Max) @ Id, Vgs: 13.3mOhm @ 9.2A, 20V
Power Dissipation (Max): 2.5W (Ta)
Vgs(th) (Max) @ Id: 2.4V @ 25µA
Supplier Device Package: 8-SO
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V, 20V
Vgs (Max): ±25V
Drain to Source Voltage (Vdss): 30 V
Gate Charge (Qg) (Max) @ Vgs: 38 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 1110 pF @ 25 V
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IRFH5006TR2PBF irfh5006pbf.pdf?fileId=5546d462533600a40153561aa6561e96
IRFH5006TR2PBF
Виробник: Infineon Technologies
Description: MOSFET N-CH 60V 100A 5X6 PQFN
Packaging: Cut Tape (CT)
Package / Case: 8-PowerTDFN
Mounting Type: Surface Mount
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 21A (Ta), 100A (Tc)
Rds On (Max) @ Id, Vgs: 4.1mOhm @ 50A, 10V
Vgs(th) (Max) @ Id: 4V @ 150µA
Supplier Device Package: 8-PQFN (5x6)
Part Status: Obsolete
Drain to Source Voltage (Vdss): 60 V
Gate Charge (Qg) (Max) @ Vgs: 100 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 4175 pF @ 30 V
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IRFH5007TR2PBF irfh5007pbf.pdf?fileId=5546d462533600a40153561aad861e98
IRFH5007TR2PBF
Виробник: Infineon Technologies
Description: MOSFET N-CH 75V 17A 5X6 PQFN
Packaging: Cut Tape (CT)
Package / Case: 8-PowerTDFN
Mounting Type: Surface Mount
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 17A (Ta), 100A (Tc)
Rds On (Max) @ Id, Vgs: 5.9mOhm @ 50A, 10V
Vgs(th) (Max) @ Id: 4V @ 150µA
Supplier Device Package: 8-PQFN (5x6)
Part Status: Obsolete
Drain to Source Voltage (Vdss): 75 V
Gate Charge (Qg) (Max) @ Vgs: 98 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 4290 pF @ 25 V
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IRFH5010TR2PBF irfh5010pbf.pdf?fileId=5546d462533600a40153561ab6f31e9a
IRFH5010TR2PBF
Виробник: Infineon Technologies
Description: MOSFET N-CH 100V 13A 5X6 PQFN
Packaging: Cut Tape (CT)
Package / Case: 8-PowerVDFN
Mounting Type: Surface Mount
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 13A (Ta), 100A (Tc)
Rds On (Max) @ Id, Vgs: 9mOhm @ 50A, 10V
Vgs(th) (Max) @ Id: 4V @ 150µA
Supplier Device Package: 8-PQFN (5x6)
Part Status: Obsolete
Drain to Source Voltage (Vdss): 100 V
Gate Charge (Qg) (Max) @ Vgs: 98 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 4340 pF @ 25 V
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IRFH5106TR2PBF irfh5106pbf.pdf?fileId=5546d462533600a40153561ae5e81ea6
IRFH5106TR2PBF
Виробник: Infineon Technologies
Description: MOSFET N-CH 60V 100A 5X6 PQFN
Packaging: Cut Tape (CT)
Package / Case: 8-PowerVDFN
Mounting Type: Surface Mount
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 21A (Ta), 100A (Tc)
Rds On (Max) @ Id, Vgs: 5.6mOhm @ 50A, 10V
Vgs(th) (Max) @ Id: 4V @ 250µA
Supplier Device Package: 8-PQFN (5x6)
Part Status: Obsolete
Drain to Source Voltage (Vdss): 60 V
Gate Charge (Qg) (Max) @ Vgs: 75 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 3090 pF @ 25 V
товару немає в наявності
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IRFH5110TR2PBF irfh5110pbf.pdf?fileId=5546d462533600a40153561aec951ea8
IRFH5110TR2PBF
Виробник: Infineon Technologies
Description: MOSFET N-CH 100V 5X6 PQFN
Packaging: Cut Tape (CT)
Package / Case: 8-PowerVDFN
Mounting Type: Surface Mount
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 11A (Ta), 63A (Tc)
Rds On (Max) @ Id, Vgs: 12.4mOhm @ 37A, 10V
Vgs(th) (Max) @ Id: 4V @ 100µA
Supplier Device Package: 8-PQFN (5x6)
Part Status: Obsolete
Drain to Source Voltage (Vdss): 100 V
Gate Charge (Qg) (Max) @ Vgs: 72 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 3152 pF @ 25 V
товару немає в наявності
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IRFH5206TR2PBF irfh5206pbf.pdf?fileId=5546d462533600a40153561afcd01eac
IRFH5206TR2PBF
Виробник: Infineon Technologies
Description: MOSFET N-CH 60V 16A 5X6 PQFN
Packaging: Cut Tape (CT)
Package / Case: 8-PowerVDFN
Mounting Type: Surface Mount
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 16A (Ta), 89A (Tc)
Rds On (Max) @ Id, Vgs: 6.7mOhm @ 50A, 10V
Vgs(th) (Max) @ Id: 4V @ 100µA
Supplier Device Package: 8-PQFN (5x6)
Drain to Source Voltage (Vdss): 60 V
Gate Charge (Qg) (Max) @ Vgs: 60 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 2490 pF @ 25 V
товару немає в наявності
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IRFH5207TR2PBF irfh5207pbf.pdf?fileId=5546d462533600a40153561b05871eae
IRFH5207TR2PBF
Виробник: Infineon Technologies
Description: MOSFET N-CH 75V 5X6 PQFN
Packaging: Cut Tape (CT)
Package / Case: 8-PowerVDFN
Mounting Type: Surface Mount
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 13A (Ta), 71A (Tc)
Rds On (Max) @ Id, Vgs: 9.6mOhm @ 43A, 10V
Vgs(th) (Max) @ Id: 4V @ 100µA
Supplier Device Package: 8-PQFN (5x6)
Part Status: Obsolete
Drain to Source Voltage (Vdss): 75 V
Gate Charge (Qg) (Max) @ Vgs: 59 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 2474 pF @ 25 V
товару немає в наявності
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IRFH5210TR2PBF irfh5210pbf.pdf?fileId=5546d462533600a40153561b0c461eb0
IRFH5210TR2PBF
Виробник: Infineon Technologies
Description: MOSFET N-CH 100V 10A 5X6 PQFN
Packaging: Cut Tape (CT)
Package / Case: 8-PowerVDFN
Mounting Type: Surface Mount
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 10A (Ta), 55A (Tc)
Rds On (Max) @ Id, Vgs: 14.9mOhm @ 33A, 10V
Vgs(th) (Max) @ Id: 4V @ 100µA
Supplier Device Package: 8-PQFN (5x6)
Part Status: Obsolete
Drain to Source Voltage (Vdss): 100 V
Gate Charge (Qg) (Max) @ Vgs: 59 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 2570 pF @ 25 V
товару немає в наявності
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IRFH5406TR2PBF irfh5406pbf.pdf?fileId=5546d462533600a40153561e92861ece
IRFH5406TR2PBF
Виробник: Infineon Technologies
Description: MOSFET N-CH 60V 40A 5X6 PQFN
Packaging: Cut Tape (CT)
Package / Case: 8-PowerVDFN
Mounting Type: Surface Mount
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 11A (Ta), 40A (Tc)
Rds On (Max) @ Id, Vgs: 14.4mOhm @ 24A, 10V
Vgs(th) (Max) @ Id: 4V @ 50µA
Supplier Device Package: 8-PQFN (5x6)
Part Status: Obsolete
Drain to Source Voltage (Vdss): 60 V
Gate Charge (Qg) (Max) @ Vgs: 35 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 1256 pF @ 25 V
товару немає в наявності
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IRFH6200TR2PBF irfh6200pbf.pdf?fileId=5546d462533600a40153561e9b131ed0
IRFH6200TR2PBF
Виробник: Infineon Technologies
Description: MOSFET N-CH 20V 100A 5X6 PQFN
Packaging: Cut Tape (CT)
Package / Case: 8-PowerVDFN
Mounting Type: Surface Mount
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 49A (Ta), 100A (Tc)
Rds On (Max) @ Id, Vgs: 0.95mOhm @ 50A, 10V
Vgs(th) (Max) @ Id: 1.1V @ 150µA
Supplier Device Package: 8-PQFN (5x6)
Drain to Source Voltage (Vdss): 20 V
Gate Charge (Qg) (Max) @ Vgs: 230 nC @ 4.5 V
Input Capacitance (Ciss) (Max) @ Vds: 10890 pF @ 10 V
товару немає в наявності
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IRFH7911TR2PBF irfh7911pbf.pdf?fileId=5546d462533600a40153561f3e731efa
IRFH7911TR2PBF
Виробник: Infineon Technologies
Description: MOSFET 2N-CH 30V 13A/28A PQFN
Packaging: Cut Tape (CT)
Package / Case: 18-PowerVQFN
Mounting Type: Surface Mount
Configuration: 2 N-Channel (Dual)
Technology: MOSFET (Metal Oxide)
Power - Max: 2.4W, 3.4W
Drain to Source Voltage (Vdss): 30V
Current - Continuous Drain (Id) @ 25°C: 13A, 28A
Input Capacitance (Ciss) (Max) @ Vds: 1060pF @ 15V
Rds On (Max) @ Id, Vgs: 8.6mOhm @ 12A, 10V
Gate Charge (Qg) (Max) @ Vgs: 12nC @ 4.5V
FET Feature: Logic Level Gate
Vgs(th) (Max) @ Id: 2.35V @ 25µA
Supplier Device Package: PQFN (5x6)
Part Status: Obsolete
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IRFH7934TR2PBF irfh7934pbf.pdf?fileId=5546d462533600a40153561f63e41f05
IRFH7934TR2PBF
Виробник: Infineon Technologies
Description: MOSFET N-CH 30V 24A 5X6 PQFN
товару немає в наявності
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IRFS3307ZTRLPBF irfs3307zpbf.pdf?fileId=5546d462533600a40153563691d7216c
IRFS3307ZTRLPBF
Виробник: Infineon Technologies
Description: MOSFET N-CH 75V 120A D2PAK
Packaging: Cut Tape (CT)
Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 120A (Tc)
Rds On (Max) @ Id, Vgs: 5.8mOhm @ 75A, 10V
Power Dissipation (Max): 230W (Tc)
Vgs(th) (Max) @ Id: 4V @ 150µA
Supplier Device Package: D2PAK
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 75 V
Gate Charge (Qg) (Max) @ Vgs: 110 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 4750 pF @ 50 V
товару немає в наявності
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IRG4BC30F-STRLP IRG4BC30F.pdf
IRG4BC30F-STRLP
Виробник: Infineon Technologies
Description: IGBT 600V 31A 100W D2PAK
Packaging: Cut Tape (CT)
Package / Case: TO-263-3, D²Pak (2 Leads + Tab), TO-263AB
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Input Type: Standard
Vce(on) (Max) @ Vge, Ic: 1.8V @ 15V, 17A
Supplier Device Package: D2PAK
Td (on/off) @ 25°C: 21ns/200ns
Switching Energy: 230µJ (on), 1.18mJ (off)
Test Condition: 480V, 17A, 23Ohm, 15V
Gate Charge: 51 nC
Part Status: Obsolete
Current - Collector (Ic) (Max): 31 A
Voltage - Collector Emitter Breakdown (Max): 600 V
Current - Collector Pulsed (Icm): 120 A
Power - Max: 100 W
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IRG4BC30F-STRRP IRG4BC30F.pdf
IRG4BC30F-STRRP
Виробник: Infineon Technologies
Description: IGBT 600V 31A 100W D2PAK
Packaging: Cut Tape (CT)
Package / Case: TO-263-3, D²Pak (2 Leads + Tab), TO-263AB
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Input Type: Standard
Vce(on) (Max) @ Vge, Ic: 1.8V @ 15V, 17A
Supplier Device Package: D2PAK
Td (on/off) @ 25°C: 21ns/200ns
Switching Energy: 230µJ (on), 1.18mJ (off)
Test Condition: 480V, 17A, 23Ohm, 15V
Gate Charge: 51 nC
Part Status: Obsolete
Current - Collector (Ic) (Max): 31 A
Voltage - Collector Emitter Breakdown (Max): 600 V
Current - Collector Pulsed (Icm): 120 A
Power - Max: 100 W
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IRG6S320UTRLPBF IRG6S320UPbF.pdf
IRG6S320UTRLPBF
Виробник: Infineon Technologies
Description: IGBT 330V 50A 114W D2PAK
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IRG7S313UTRLPBF IRG7S313UPbF.pdf
IRG7S313UTRLPBF
Виробник: Infineon Technologies
Description: IGBT TRENCH 330V 40A D2PAK
Packaging: Cut Tape (CT)
Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
Mounting Type: Surface Mount
Input Type: Standard
Vce(on) (Max) @ Vge, Ic: 2.14V @ 15V, 60A
Supplier Device Package: D2PAK
IGBT Type: Trench
Td (on/off) @ 25°C: 1ns/65ns
Test Condition: 196V, 12A, 10Ohm
Gate Charge: 33 nC
Part Status: Obsolete
Current - Collector (Ic) (Max): 40 A
Voltage - Collector Emitter Breakdown (Max): 330 V
Power - Max: 78 W
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IRLH5034TR2PBF irlh5034pbf.pdf?fileId=5546d462533600a4015356636815259b
IRLH5034TR2PBF
Виробник: Infineon Technologies
Description: MOSFET N-CH 40V 100A 5X6 PQFN
Packaging: Cut Tape (CT)
Package / Case: 8-PowerVDFN
Mounting Type: Surface Mount
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 29A (Ta), 100A (Tc)
Rds On (Max) @ Id, Vgs: 2.4mOhm @ 50A, 10V
Vgs(th) (Max) @ Id: 2.5V @ 150µA
Supplier Device Package: 8-PQFN (5x6)
Drain to Source Voltage (Vdss): 40 V
Gate Charge (Qg) (Max) @ Vgs: 82 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 4730 pF @ 25 V
товару немає в наявності
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IRLH5036TR2PBF irlh5036pbf.pdf?fileId=5546d462533600a4015356637102259d
IRLH5036TR2PBF
Виробник: Infineon Technologies
Description: MOSFET N-CH 60V 100A 5X6 PQFN
Packaging: Cut Tape (CT)
Package / Case: 8-PowerVDFN
Mounting Type: Surface Mount
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 20A (Ta), 100A (Tc)
Rds On (Max) @ Id, Vgs: 4.4mOhm @ 50A, 10V
Vgs(th) (Max) @ Id: 2.5V @ 150µA
Supplier Device Package: 8-PQFN (5x6)
Part Status: Obsolete
Drain to Source Voltage (Vdss): 60 V
Gate Charge (Qg) (Max) @ Vgs: 90 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 5360 pF @ 25 V
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IRLML0040TRPBF irlml0040pbf.pdf?fileId=5546d462533600a401535664894825e4
IRLML0040TRPBF
Виробник: Infineon Technologies
Description: MOSFET N-CH 40V 3.6A SOT23
Packaging: Cut Tape (CT)
Package / Case: TO-236-3, SC-59, SOT-23-3
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 3.6A (Ta)
Rds On (Max) @ Id, Vgs: 56mOhm @ 3.6A, 10V
Power Dissipation (Max): 1.3W (Ta)
Vgs(th) (Max) @ Id: 2.5V @ 25µA
Supplier Device Package: Micro3™/SOT-23
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±16V
Drain to Source Voltage (Vdss): 40 V
Gate Charge (Qg) (Max) @ Vgs: 3.9 nC @ 4.5 V
Input Capacitance (Ciss) (Max) @ Vds: 266 pF @ 25 V
на замовлення 9000 шт:
термін постачання 21-31 дні (днів)
КількістьЦіна без ПДВ
9+35.68 грн
15+21.46 грн
50+15.52 грн
100+12.75 грн
500+9.56 грн
Мінімальне замовлення: 9 шт
В кошику  од. на суму  грн.
IRLML5103GTRPBF irlml5103gpbf.pdf?fileId=5546d462533600a40153566844fd2615
IRLML5103GTRPBF
Виробник: Infineon Technologies
Description: MOSFET P-CH 30V 0.76A SOT-23-3
Packaging: Cut Tape (CT)
Package / Case: TO-236-3, SC-59, SOT-23-3
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: P-Channel
Current - Continuous Drain (Id) @ 25°C: 760mA (Ta)
Rds On (Max) @ Id, Vgs: 600mOhm @ 600mA, 10V
Power Dissipation (Max): 540mW (Ta)
Vgs(th) (Max) @ Id: 1V @ 250µA
Supplier Device Package: Micro3™/SOT-23
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 30 V
Gate Charge (Qg) (Max) @ Vgs: 5.1 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 75 pF @ 25 V
товару немає в наявності
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IRLML9303TRPBF irlml9303pbf.pdf?fileId=5546d462533600a401535668ef1d2642
IRLML9303TRPBF
Виробник: Infineon Technologies
Description: MOSFET P-CH 30V 2.3A SOT23
Packaging: Cut Tape (CT)
Package / Case: TO-236-3, SC-59, SOT-23-3
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: P-Channel
Current - Continuous Drain (Id) @ 25°C: 2.3A (Ta)
Rds On (Max) @ Id, Vgs: 165mOhm @ 2.3A, 10V
Power Dissipation (Max): 1.25W (Ta)
Vgs(th) (Max) @ Id: 2.4V @ 10µA
Supplier Device Package: Micro3™/SOT-23
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 30 V
Gate Charge (Qg) (Max) @ Vgs: 2 nC @ 4.5 V
Input Capacitance (Ciss) (Max) @ Vds: 160 pF @ 25 V
на замовлення 10 шт:
термін постачання 21-31 дні (днів)
В кошику  од. на суму  грн.
IRLR8726TRPBF irlr8726pbf.pdf?fileId=5546d462533600a40153567181dd26f7
IRLR8726TRPBF
Виробник: Infineon Technologies
Description: MOSFET N-CH 30V 86A DPAK
Packaging: Cut Tape (CT)
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 86A (Tc)
Rds On (Max) @ Id, Vgs: 5.8mOhm @ 25A, 10V
Power Dissipation (Max): 75W (Tc)
Vgs(th) (Max) @ Id: 2.35V @ 50µA
Supplier Device Package: TO-252AA (DPAK)
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 30 V
Gate Charge (Qg) (Max) @ Vgs: 23 nC @ 4.5 V
Input Capacitance (Ciss) (Max) @ Vds: 2150 pF @ 15 V
на замовлення 56213 шт:
термін постачання 21-31 дні (днів)
КількістьЦіна без ПДВ
3+113.39 грн
10+68.72 грн
50+51.34 грн
100+42.92 грн
500+33.67 грн
Мінімальне замовлення: 3 шт
В кошику  од. на суму  грн.
IRS2573DSTRPBF irs2573dspbf.pdf?fileId=5546d462533600a40153567b288c2835
IRS2573DSTRPBF
Виробник: Infineon Technologies
Description: IC HID LAMP CNTRL 240HZ 28SOIC
товару немає в наявності
В кошику  од. на суму  грн.
IRS4426STRPBF IRSDS11546-1.pdf?t.download=true&u=5oefqw
IRS4426STRPBF
Виробник: Infineon Technologies
Description: IC GATE DRVR LOW-SIDE 8SOIC
Packaging: Cut Tape (CT)
Package / Case: 8-SOIC (0.154", 3.90mm Width)
Mounting Type: Surface Mount
Operating Temperature: -40°C ~ 150°C (TJ)
Voltage - Supply: 6V ~ 20V
Input Type: Inverting
Supplier Device Package: 8-SOIC
Rise / Fall Time (Typ): 25ns, 25ns
Channel Type: Independent
Driven Configuration: Low-Side
Number of Drivers: 2
Gate Type: IGBT, MOSFET (N-Channel)
Logic Voltage - VIL, VIH: 0.8V, 2.5V
Current - Peak Output (Source, Sink): 2.3A, 3.3A
Part Status: Active
DigiKey Programmable: Not Verified
на замовлення 4425 шт:
термін постачання 21-31 дні (днів)
КількістьЦіна без ПДВ
5+72.16 грн
10+50.01 грн
25+45.17 грн
100+37.41 грн
250+35.03 грн
500+33.59 грн
1000+31.88 грн
Мінімальне замовлення: 5 шт
В кошику  од. на суму  грн.
IRS4428STRPBF IRSDS11546-1.pdf?t.download=true&u=5oefqw
IRS4428STRPBF
Виробник: Infineon Technologies
Description: IC GATE DRVR LOW-SIDE 8SOIC
Packaging: Cut Tape (CT)
Package / Case: 8-SOIC (0.154", 3.90mm Width)
Mounting Type: Surface Mount
Operating Temperature: -40°C ~ 150°C (TJ)
Voltage - Supply: 6V ~ 20V
Input Type: Inverting, Non-Inverting
Supplier Device Package: 8-SOIC
Rise / Fall Time (Typ): 25ns, 25ns
Channel Type: Independent
Driven Configuration: Low-Side
Number of Drivers: 2
Gate Type: IGBT, MOSFET (N-Channel)
Logic Voltage - VIL, VIH: 0.8V, 2.5V
Current - Peak Output (Source, Sink): 2.3A, 3.3A
Part Status: Active
DigiKey Programmable: Not Verified
на замовлення 3693 шт:
термін постачання 21-31 дні (днів)
КількістьЦіна без ПДВ
5+73.74 грн
10+51.16 грн
25+46.21 грн
100+38.27 грн
250+35.84 грн
500+34.37 грн
1000+32.62 грн
Мінімальне замовлення: 5 шт
В кошику  од. на суму  грн.
IR3840WMTRPBF ir3840wm.pdf?fileId=5546d462533600a4015355d21b6217d3
IR3840WMTRPBF
Виробник: Infineon Technologies
Description: IC REG BUCK ADJ 12A 22QFN
Voltage - Output (Min/Fixed): 0.7V
Voltage - Input (Min): 1.5V
Voltage - Output (Max): 14.4V
Synchronous Rectifier: Yes
Supplier Device Package: 22-PQFN (5x6)
Topology: Buck
Voltage - Input (Max): 16V
Frequency - Switching: 225kHz ~ 1.65MHz
Output Configuration: Positive
Operating Temperature: -40°C ~ 125°C (TJ)
Current - Output: 12A
Function: Step-Down
Number of Outputs: 1
Mounting Type: Surface Mount
Output Type: Adjustable
Package / Case: 22-PowerVQFN
Packaging: Tape & Reel (TR)
товару немає в наявності
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IR3841WMTRPBF ir3841wm.pdf?fileId=5546d462533600a4015355d22bdc17d7
IR3841WMTRPBF
Виробник: Infineon Technologies
Description: IC REG BUCK ADJ 8A PQFN
Voltage - Output (Min/Fixed): 0.7V
Voltage - Input (Min): 1.5V
Voltage - Output (Max): 14.4V
Synchronous Rectifier: Yes
Supplier Device Package: PQFN (5x6)
Topology: Buck
Voltage - Input (Max): 16V
Frequency - Switching: 225kHz ~ 1.65MHz
Output Configuration: Positive
Operating Temperature: -40°C ~ 125°C (TJ)
Current - Output: 8A
Function: Step-Down
Number of Outputs: 1
Mounting Type: Surface Mount
Output Type: Adjustable
Package / Case: 15-PowerVQFN
Packaging: Tape & Reel (TR)
товару немає в наявності
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IR3843WMTRPBF ir3843wm.pdf?fileId=5546d462533600a4015355d5602f17ec
IR3843WMTRPBF
Виробник: Infineon Technologies
Description: IC REG BUCK ADJ 2A PQFN
Packaging: Tape & Reel (TR)
Package / Case: 15-PowerVQFN
Output Type: Adjustable
Mounting Type: Surface Mount
Number of Outputs: 1
Function: Step-Down
Current - Output: 2A
Operating Temperature: -40°C ~ 125°C (TJ)
Output Configuration: Positive
Frequency - Switching: 225kHz ~ 1.65MHz
Voltage - Input (Max): 16V
Topology: Buck
Supplier Device Package: PQFN (5x6)
Synchronous Rectifier: Yes
Voltage - Output (Max): 14.4V
Voltage - Input (Min): 1.5V
Voltage - Output (Min/Fixed): 0.7V
товару немає в наявності
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IR11662SPBF IR11662S.pdf
IR11662SPBF
Виробник: Infineon Technologies
Description: IC GATE DRVR LOW-SIDE 8SOIC
Part Status: Discontinued at Digi-Key
Current - Peak Output (Source, Sink): 1A, 4A
Logic Voltage - VIL, VIH: 2V, 2.15V
Gate Type: MOSFET (N-Channel)
Number of Drivers: 1
Driven Configuration: Low-Side
Channel Type: Single
Rise / Fall Time (Typ): 21ns, 10ns
Supplier Device Package: 8-SOIC
Input Type: Non-Inverting
Voltage - Supply: 11.4V ~ 18V
Operating Temperature: -25°C ~ 125°C (TJ)
Mounting Type: Surface Mount
Package / Case: 8-SOIC (0.154", 3.90mm Width)
Packaging: Tube
DigiKey Programmable: Not Verified
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IR11682SPBF ir11682spbf.pdf?fileId=5546d462533600a4015355c47188165a
IR11682SPBF
Виробник: Infineon Technologies
Description: IC SECONDARY SIDE CTRLR 8SOIC
Packaging: Tube
Package / Case: 8-SOIC (0.154", 3.90mm Width)
Mounting Type: Surface Mount
Operating Temperature: -25°C ~ 125°C
Voltage - Supply: 8.6V ~ 18V
Applications: Secondary-Side Controller, Synchronous Rectifier
Supplier Device Package: 8-SOIC
Part Status: Discontinued at Digi-Key
Current - Supply: 48 mA
DigiKey Programmable: Not Verified
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IR3840AMTRPBF ir3840am.pdf?fileId=5546d462533600a4015355d20aff17cf
IR3840AMTRPBF
Виробник: Infineon Technologies
Description: IC REG BUCK ADJ 14A PQFN
Packaging: Tape & Reel (TR)
Package / Case: 15-PowerVQFN
Output Type: Adjustable
Mounting Type: Surface Mount
Number of Outputs: 1
Function: Step-Down
Current - Output: 14A
Operating Temperature: -40°C ~ 125°C (TJ)
Output Configuration: Positive
Frequency - Switching: 225kHz ~ 1MHz
Voltage - Input (Max): 16V
Topology: Buck
Supplier Device Package: PQFN (5x6)
Synchronous Rectifier: Yes
Voltage - Output (Max): 14.4V
Voltage - Input (Min): 1.5V
Voltage - Output (Min/Fixed): 0.9V
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IR3856WMTRPBF IR3856WMPbF.pdf
IR3856WMTRPBF
Виробник: Infineon Technologies
Description: IC REG BUCK ADJUSTABLE 6A 17PQFN
товару немає в наявності
Мінімальне замовлення: 4000 шт
В кошику  од. на суму  грн.
IR3876MTRPBF IR3876MPBF.pdf
IR3876MTRPBF
Виробник: Infineon Technologies
Description: IC REG BUCK ADJUSTABLE 12A PQFN
Packaging: Tape & Reel (TR)
Package / Case: 17-PowerVQFN
Output Type: Adjustable
Mounting Type: Surface Mount
Number of Outputs: 1
Function: Step-Down
Current - Output: 12A
Operating Temperature: 0°C ~ 125°C (TJ)
Output Configuration: Positive
Frequency - Switching: Up to 1MHz
Voltage - Input (Max): 21V
Topology: Buck
Supplier Device Package: PQFN (5x6)
Synchronous Rectifier: Yes
Voltage - Output (Max): 12V
Voltage - Input (Min): 3V
Voltage - Output (Min/Fixed): 0.5V
Part Status: Obsolete
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IRF6706S2TRPBF IRF6706S2TR(1)PbF.pdf
IRF6706S2TRPBF
Виробник: Infineon Technologies
Description: MOSFET N-CH 25V 17A DIRECTFET
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IRF6794MTRPBF IRF6794M(TR)1PBF.pdf
IRF6794MTRPBF
Виробник: Infineon Technologies
Description: MOSFET N-CH 25V 32A DIRECTFET
Packaging: Tape & Reel (TR)
Package / Case: DirectFET™ Isometric MX
Mounting Type: Surface Mount
Operating Temperature: -40°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 32A (Ta), 200A (Tc)
Rds On (Max) @ Id, Vgs: 1.7mOhm @ 32A, 10V
FET Feature: Schottky Diode (Body)
Power Dissipation (Max): 2.8W (Ta), 100W (Tc)
Vgs(th) (Max) @ Id: 2.35V @ 100µA
Supplier Device Package: DIRECTFET™ MX
Part Status: Obsolete
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 25 V
Gate Charge (Qg) (Max) @ Vgs: 47 nC @ 4.5 V
Input Capacitance (Ciss) (Max) @ Vds: 4420 pF @ 13 V
товару немає в наявності
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