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IRF7406GTRPBF IRF7406GTRPBF Infineon Technologies IRF7406GPBF.pdf Description: MOSFET P-CH 30V 5.8A 8SO
Packaging: Tape & Reel (TR)
Package / Case: 8-SOIC (0.154", 3.90mm Width)
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: P-Channel
Current - Continuous Drain (Id) @ 25°C: 5.8A (Ta)
Rds On (Max) @ Id, Vgs: 45mOhm @ 2.8A, 10V
Power Dissipation (Max): 2.5W (Ta)
Vgs(th) (Max) @ Id: 1V @ 250µA
Supplier Device Package: 8-SO
Part Status: Obsolete
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 30 V
Gate Charge (Qg) (Max) @ Vgs: 59 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 1100 pF @ 25 V
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IRF7413GTRPBF IRF7413GTRPBF Infineon Technologies IRF7413GPBF.pdf Description: MOSFET N-CH 30V 13A 8SO
Packaging: Tape & Reel (TR)
Package / Case: 8-SOIC (0.154", 3.90mm Width)
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 13A (Ta)
Rds On (Max) @ Id, Vgs: 11mOhm @ 7.3A, 10V
Power Dissipation (Max): 2.5W (Ta)
Vgs(th) (Max) @ Id: 3V @ 250µA
Supplier Device Package: 8-SO
Part Status: Obsolete
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 30 V
Gate Charge (Qg) (Max) @ Vgs: 79 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 1800 pF @ 25 V
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IRF7413ZGTRPBF IRF7413ZGTRPBF Infineon Technologies IRF7413ZGPBF.pdf Description: MOSFET N-CH 30V 13A 8SO
Packaging: Tape & Reel (TR)
Package / Case: 8-SOIC (0.154", 3.90mm Width)
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 13A (Ta)
Rds On (Max) @ Id, Vgs: 10mOhm @ 13A, 10V
Power Dissipation (Max): 2.5W (Ta)
Vgs(th) (Max) @ Id: 2.25V @ 25µA
Supplier Device Package: 8-SO
Part Status: Obsolete
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 30 V
Gate Charge (Qg) (Max) @ Vgs: 14 nC @ 4.5 V
Input Capacitance (Ciss) (Max) @ Vds: 1210 pF @ 15 V
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IRF7416GTRPBF IRF7416GTRPBF Infineon Technologies irf7416gpbf.pdf Description: MOSFET P-CH 30V 10A 8SO
Packaging: Tape & Reel (TR)
Package / Case: 8-SOIC (0.154", 3.90mm Width)
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: P-Channel
Current - Continuous Drain (Id) @ 25°C: 10A (Ta)
Rds On (Max) @ Id, Vgs: 20mOhm @ 5.6A, 10V
Power Dissipation (Max): 2.5W (Ta)
Vgs(th) (Max) @ Id: 1V @ 250µA
Supplier Device Package: 8-SO
Part Status: Obsolete
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 30 V
Gate Charge (Qg) (Max) @ Vgs: 92 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 1700 pF @ 25 V
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IRF7424GTRPBF IRF7424GTRPBF Infineon Technologies irf7424gpbf.pdf Description: MOSFET P-CH 30V 11A 8SO
Packaging: Tape & Reel (TR)
Package / Case: 8-SOIC (0.154", 3.90mm Width)
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: P-Channel
Current - Continuous Drain (Id) @ 25°C: 11A (Ta)
Rds On (Max) @ Id, Vgs: 13.5mOhm @ 11A, 10V
Power Dissipation (Max): 2.5W (Ta)
Vgs(th) (Max) @ Id: 2.5V @ 250µA
Supplier Device Package: 8-SO
Part Status: Obsolete
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 30 V
Gate Charge (Qg) (Max) @ Vgs: 110 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 4030 pF @ 25 V
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IRF7524D1GTRPBF IRF7524D1GTRPBF Infineon Technologies IRF7524D1GPBF.pdf Description: MOSFET P-CH 20V 1.7A 8USMD
Packaging: Tape & Reel (TR)
Package / Case: 8-TSSOP, 8-MSOP (0.118", 3.00mm Width)
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: P-Channel
Current - Continuous Drain (Id) @ 25°C: 1.7A (Ta)
Rds On (Max) @ Id, Vgs: 270mOhm @ 1.2A, 4.5V
FET Feature: Schottky Diode (Isolated)
Power Dissipation (Max): 1.25W (Ta)
Vgs(th) (Max) @ Id: 700mV @ 250µA (Min)
Supplier Device Package: 8-uSMD
Part Status: Obsolete
Drive Voltage (Max Rds On, Min Rds On): 2.7V, 4.5V
Vgs (Max): ±12V
Drain to Source Voltage (Vdss): 20 V
Gate Charge (Qg) (Max) @ Vgs: 8.2 nC @ 4.5 V
Input Capacitance (Ciss) (Max) @ Vds: 240 pF @ 15 V
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IRF7811WGTRPBF IRF7811WGTRPBF Infineon Technologies irf7811wgpbf.pdf Description: MOSFET N-CH 30V 14A 8SO
Packaging: Tape & Reel (TR)
Package / Case: 8-SOIC (0.154", 3.90mm Width)
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 14A (Ta)
Rds On (Max) @ Id, Vgs: 12mOhm @ 15A, 4.5V
Power Dissipation (Max): 3.1W (Ta)
Vgs(th) (Max) @ Id: 1V @ 250µA
Supplier Device Package: 8-SO
Part Status: Obsolete
Drive Voltage (Max Rds On, Min Rds On): 4.5V
Vgs (Max): ±12V
Drain to Source Voltage (Vdss): 30 V
Gate Charge (Qg) (Max) @ Vgs: 33 nC @ 5 V
Input Capacitance (Ciss) (Max) @ Vds: 2335 pF @ 16 V
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IRF7821GTRPBF IRF7821GTRPBF Infineon Technologies IRF7821GPBF.pdf Description: MOSFET N-CH 30V 13.6A 8SO
Packaging: Tape & Reel (TR)
Package / Case: 8-SOIC (0.154", 3.90mm Width)
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 155°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 13.6A (Ta)
Rds On (Max) @ Id, Vgs: 9.1mOhm @ 13A, 10V
Power Dissipation (Max): 2.5W (Ta)
Vgs(th) (Max) @ Id: 1V @ 250µA
Supplier Device Package: 8-SO
Part Status: Obsolete
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 30 V
Gate Charge (Qg) (Max) @ Vgs: 14 nC @ 4.5 V
Input Capacitance (Ciss) (Max) @ Vds: 1010 pF @ 15 V
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IRF8113GTRPBF IRF8113GTRPBF Infineon Technologies IRF8113GPBF.pdf Description: MOSFET N-CH 30V 17.2A 8SO
Packaging: Tape & Reel (TR)
Package / Case: 8-SOIC (0.154", 3.90mm Width)
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 17.2A (Ta)
Rds On (Max) @ Id, Vgs: 5.6mOhm @ 17.2A, 10V
Power Dissipation (Max): 2.5W (Ta)
Vgs(th) (Max) @ Id: 2.2V @ 250µA
Supplier Device Package: 8-SO
Part Status: Obsolete
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 30 V
Gate Charge (Qg) (Max) @ Vgs: 36 nC @ 4.5 V
Input Capacitance (Ciss) (Max) @ Vds: 2910 pF @ 15 V
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IRF8852TRPBF IRF8852TRPBF Infineon Technologies IRF8852PBF.pdf Description: MOSFET 2N-CH 25V 7.8A 8TSSOP
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IRF8910GTRPBF IRF8910GTRPBF Infineon Technologies irf8910gpbf.pdf?fileId=5546d462533600a401535610e2721d8b Description: MOSFET 2N-CH 20V 10A 8SO
Packaging: Tape & Reel (TR)
Package / Case: 8-SOIC (0.154", 3.90mm Width)
Mounting Type: Surface Mount
Configuration: 2 N-Channel (Dual)
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
Power - Max: 2W
Drain to Source Voltage (Vdss): 20V
Current - Continuous Drain (Id) @ 25°C: 10A
Input Capacitance (Ciss) (Max) @ Vds: 960pF @ 10V
Rds On (Max) @ Id, Vgs: 13.4mOhm @ 10A, 10V
Gate Charge (Qg) (Max) @ Vgs: 11nC @ 4.5V
FET Feature: Logic Level Gate
Vgs(th) (Max) @ Id: 2.55V @ 250µA
Supplier Device Package: 8-SO
Part Status: Obsolete
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IRF9204PBF IRF9204PBF Infineon Technologies IRF9204PbF.pdf Description: MOSFET P-CH 40V 56A TO220AB
Packaging: Tube
Package / Case: TO-220-3
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: P-Channel
Current - Continuous Drain (Id) @ 25°C: 56A (Ta)
Rds On (Max) @ Id, Vgs: 16mOhm @ 37A, 10V
Power Dissipation (Max): 143W (Tc)
Vgs(th) (Max) @ Id: 3V @ 100µA
Supplier Device Package: TO-220AB
Part Status: Obsolete
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 40 V
Gate Charge (Qg) (Max) @ Vgs: 224 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 7676 pF @ 25 V
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IRF9317TRPBF IRF9317TRPBF Infineon Technologies irf9317pbf.pdf?fileId=5546d462533600a4015356111d801d99 Description: MOSFET P-CH 30V 16A 8SO
Packaging: Tape & Reel (TR)
Package / Case: 8-SOIC (0.154", 3.90mm Width)
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: P-Channel
Current - Continuous Drain (Id) @ 25°C: 16A (Ta)
Rds On (Max) @ Id, Vgs: 6.6mOhm @ 16A, 10V
Power Dissipation (Max): 2.5W (Ta)
Vgs(th) (Max) @ Id: 2.4V @ 50µA
Supplier Device Package: 8-SO
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 30 V
Gate Charge (Qg) (Max) @ Vgs: 92 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 2820 pF @ 15 V
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IRF9321TRPBF IRF9321TRPBF Infineon Technologies irf9321pbf.pdf?fileId=5546d462533600a40153561125fc1d9b Description: MOSFET P-CH 30V 15A 8SO
Packaging: Tape & Reel (TR)
Package / Case: 8-SOIC (0.154", 3.90mm Width)
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: P-Channel
Current - Continuous Drain (Id) @ 25°C: 15A (Ta)
Rds On (Max) @ Id, Vgs: 7.2mOhm @ 15A, 10V
Power Dissipation (Max): 2.5W (Ta)
Vgs(th) (Max) @ Id: 2.4V @ 50µA
Supplier Device Package: 8-SO
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 30 V
Gate Charge (Qg) (Max) @ Vgs: 98 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 2590 pF @ 25 V
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IRF9328TRPBF IRF9328TRPBF Infineon Technologies irf9328pbf.pdf?fileId=5546d462533600a4015356112e591d9d Description: MOSFET P-CH 30V 12A 8SO
Packaging: Tape & Reel (TR)
Package / Case: 8-SOIC (0.154", 3.90mm Width)
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: P-Channel
Current - Continuous Drain (Id) @ 25°C: 12A (Tc)
Rds On (Max) @ Id, Vgs: 11.9mOhm @ 12A, 10V
Power Dissipation (Max): 2.5W (Ta)
Vgs(th) (Max) @ Id: 2.4V @ 25µA
Supplier Device Package: 8-SO
Part Status: Obsolete
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 30 V
Gate Charge (Qg) (Max) @ Vgs: 52 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 1680 pF @ 25 V
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IRF9333TRPBF IRF9333TRPBF Infineon Technologies irf9333pbf.pdf?fileId=5546d462533600a4015356113f1c1da1 Description: MOSFET P-CH 30V 9.2A 8SO
Packaging: Tape & Reel (TR)
Package / Case: 8-SOIC (0.154", 3.90mm Width)
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: P-Channel
Current - Continuous Drain (Id) @ 25°C: 9.2A (Ta)
Rds On (Max) @ Id, Vgs: 19.4mOhm @ 9.2A, 10V
Power Dissipation (Max): 2.5W (Ta)
Vgs(th) (Max) @ Id: 2.4V @ 25µA
Supplier Device Package: 8-SO
Part Status: Obsolete
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 30 V
Gate Charge (Qg) (Max) @ Vgs: 38 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 1110 pF @ 25 V
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IRF9335TRPBF IRF9335TRPBF Infineon Technologies irf9335pbf.pdf?fileId=5546d462533600a40153561147881da3 Description: MOSFET P-CH 30V 5.4A 8SO
Packaging: Tape & Reel (TR)
Package / Case: 8-SOIC (0.154", 3.90mm Width)
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: P-Channel
Current - Continuous Drain (Id) @ 25°C: 5.4A (Ta)
Rds On (Max) @ Id, Vgs: 59mOhm @ 5.4A, 10V
Power Dissipation (Max): 2.5W (Ta)
Vgs(th) (Max) @ Id: 2.4V @ 10µA
Supplier Device Package: 8-SO
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 30 V
Gate Charge (Qg) (Max) @ Vgs: 14 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 386 pF @ 25 V
на замовлення 8000 шт:
термін постачання 21-31 дні (днів)
4000+18.44 грн
8000+16.78 грн
Мінімальне замовлення: 4000
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IRF9362TRPBF IRF9362TRPBF Infineon Technologies irf9362pbf.pdf?fileId=5546d462533600a40153561158c41da7 Description: MOSFET 2P-CH 30V 8A 8SO
Packaging: Tape & Reel (TR)
Package / Case: 8-SOIC (0.154", 3.90mm Width)
Mounting Type: Surface Mount
Configuration: 2 P-Channel (Dual)
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
Power - Max: 2W
Drain to Source Voltage (Vdss): 30V
Current - Continuous Drain (Id) @ 25°C: 8A
Input Capacitance (Ciss) (Max) @ Vds: 1300pF @ 25V
Rds On (Max) @ Id, Vgs: 21mOhm @ 8A, 10V
Gate Charge (Qg) (Max) @ Vgs: 39nC @ 10V
FET Feature: Logic Level Gate
Vgs(th) (Max) @ Id: 2.4V @ 25µA
Supplier Device Package: 8-SO
Part Status: Active
на замовлення 32000 шт:
термін постачання 21-31 дні (днів)
4000+21.01 грн
8000+18.77 грн
Мінімальне замовлення: 4000
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IRF9388TRPBF IRF9388TRPBF Infineon Technologies irf9388pbf.pdf?fileId=5546d462533600a40153561170191dad Description: MOSFET P-CH 30V 12A 8SO
Packaging: Tape & Reel (TR)
Package / Case: 8-SOIC (0.154", 3.90mm Width)
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: P-Channel
Current - Continuous Drain (Id) @ 25°C: 12A (Ta)
Rds On (Max) @ Id, Vgs: 8.5mOhm @ 12A, 20V
Power Dissipation (Max): 2.5W (Ta)
Vgs(th) (Max) @ Id: 2.4V @ 25µA
Supplier Device Package: 8-SO
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V, 20V
Vgs (Max): ±25V
Drain to Source Voltage (Vdss): 30 V
Gate Charge (Qg) (Max) @ Vgs: 52 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 1680 pF @ 25 V
на замовлення 8000 шт:
термін постачання 21-31 дні (днів)
4000+18.02 грн
8000+16.05 грн
Мінімальне замовлення: 4000
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IRF9393TRPBF IRF9393TRPBF Infineon Technologies irf9393pbf.pdf?fileId=5546d462533600a401535611877d1db3 Description: MOSFET P-CH 30V 9.2A 8SO
Packaging: Tape & Reel (TR)
Package / Case: 8-SOIC (0.154", 3.90mm Width)
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: P-Channel
Current - Continuous Drain (Id) @ 25°C: 9.2A (Ta)
Rds On (Max) @ Id, Vgs: 13.3mOhm @ 9.2A, 20V
Power Dissipation (Max): 2.5W (Ta)
Vgs(th) (Max) @ Id: 2.4V @ 25µA
Supplier Device Package: 8-SO
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V, 20V
Vgs (Max): ±25V
Drain to Source Voltage (Vdss): 30 V
Gate Charge (Qg) (Max) @ Vgs: 38 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 1110 pF @ 25 V
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IRFB3077GPBF IRFB3077GPBF Infineon Technologies IRFB3077GPBF.pdf Description: MOSFET N-CH 75V 120A TO220AB
Packaging: Tube
Package / Case: TO-220-3
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 120A (Tc)
Rds On (Max) @ Id, Vgs: 3.3mOhm @ 75A, 10V
Power Dissipation (Max): 370W (Tc)
Vgs(th) (Max) @ Id: 4V @ 250µA
Supplier Device Package: TO-220AB
Part Status: Obsolete
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 75 V
Gate Charge (Qg) (Max) @ Vgs: 220 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 9400 pF @ 50 V
Voltage Coupled to Gate Charge (Qg) (Max) @ Vgs: 10
Voltage Coupled to Input Capacitance (Ciss) (Max) @ Vds: 50
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IRFB4310GPBF IRFB4310GPBF Infineon Technologies IRFB4310GPBF.pdf Description: MOSFET N-CH 100V 130A TO220AB
Packaging: Tube
Package / Case: TO-220-3
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 130A (Tc)
Rds On (Max) @ Id, Vgs: 7mOhm @ 75A, 10V
Power Dissipation (Max): 300W (Tc)
Vgs(th) (Max) @ Id: 4V @ 250µA
Supplier Device Package: TO-220AB
Part Status: Obsolete
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 100 V
Gate Charge (Qg) (Max) @ Vgs: 250 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 7670 pF @ 50 V
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IRFB4310ZGPBF IRFB4310ZGPBF Infineon Technologies IRFB4310ZGPBF.pdf Description: MOSFET N-CH 100V 120A TO220AB
Packaging: Tube
Package / Case: TO-220-3
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 120A (Tc)
Rds On (Max) @ Id, Vgs: 6mOhm @ 75A, 10V
Power Dissipation (Max): 250W (Tc)
Vgs(th) (Max) @ Id: 4V @ 150µA
Supplier Device Package: TO-220AB
Part Status: Obsolete
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 100 V
Gate Charge (Qg) (Max) @ Vgs: 170 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 6860 pF @ 50 V
товару немає в наявності
В кошику  од. на суму  грн.
IRFH5303TR2PBF IRFH5303TR2PBF Infineon Technologies irfh5303pbf.pdf?fileId=5546d462533600a40153561b604a1ec5 Description: MOSFET N-CH 30V 23A/82A 8PQFN
Packaging: Tape & Reel (TR)
Package / Case: 8-PowerVDFN
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 23A (Ta), 82A (Tc)
Rds On (Max) @ Id, Vgs: 4.2mOhm @ 49A, 10V
Power Dissipation (Max): 3.6W (Ta), 46W (Tc)
Vgs(th) (Max) @ Id: 2.35V @ 50µA
Supplier Device Package: 8-PQFN (5x6)
Part Status: Obsolete
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 30 V
Gate Charge (Qg) (Max) @ Vgs: 41 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 2190 pF @ 15 V
товару немає в наявності
В кошику  од. на суму  грн.
IRFI4019HG-117P IRFI4019HG-117P Infineon Technologies irfi4019hg-117p.pdf?fileId=5546d462533600a401535623e0901f71 Description: MOSFET 2N-CH 150V 8.7A TO220-5
Packaging: Tube
Package / Case: TO-220-5 Full Pack, Formed Leads
Mounting Type: Through Hole
Configuration: 2 N-Channel (Dual)
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
Power - Max: 18W
Drain to Source Voltage (Vdss): 150V
Current - Continuous Drain (Id) @ 25°C: 8.7A
Input Capacitance (Ciss) (Max) @ Vds: 810pF @ 25V
Rds On (Max) @ Id, Vgs: 95mOhm @ 5.2A, 10V
Gate Charge (Qg) (Max) @ Vgs: 20nC @ 10V
Vgs(th) (Max) @ Id: 4.9V @ 50µA
Supplier Device Package: TO-220-5 Full-Pak
товару немає в наявності
В кошику  од. на суму  грн.
IRFP150MPBF IRFP150MPBF Infineon Technologies irfp150mpbf.pdf?fileId=5546d462533600a4015356285f3f1fd2 Description: MOSFET N-CH 100V 42A TO247AC
Packaging: Tube
Package / Case: TO-247-3
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 42A (Tc)
Rds On (Max) @ Id, Vgs: 36mOhm @ 23A, 10V
Power Dissipation (Max): 160W (Tc)
Vgs(th) (Max) @ Id: 4V @ 250µA
Supplier Device Package: TO-247AC
Part Status: Last Time Buy
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 100 V
Gate Charge (Qg) (Max) @ Vgs: 110 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 1900 pF @ 25 V
товару немає в наявності
В кошику  од. на суму  грн.
IRFP250MPBF IRFP250MPBF Infineon Technologies IRLES00077-1.pdf?t.download=true&u=5oefqw Description: MOSFET N-CH 200V 30A TO247AC
Packaging: Tube
Package / Case: TO-247-3
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 30A (Tc)
Rds On (Max) @ Id, Vgs: 75mOhm @ 18A, 10V
Power Dissipation (Max): 214W (Tc)
Vgs(th) (Max) @ Id: 4V @ 250µA
Supplier Device Package: TO-247AC
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 200 V
Gate Charge (Qg) (Max) @ Vgs: 123 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 2159 pF @ 25 V
на замовлення 2170 шт:
термін постачання 21-31 дні (днів)
2+207.35 грн
25+110.99 грн
100+89.64 грн
500+68.08 грн
1000+62.92 грн
2000+59.21 грн
Мінімальне замовлення: 2
В кошику  од. на суму  грн.
IRFP260MPBF IRFP260MPBF Infineon Technologies irfp260mpbf.pdf?fileId=5546d462533600a40153562894e91fe0 Description: MOSFET N-CH 200V 50A TO247AC
Packaging: Tube
Package / Case: TO-247-3
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 50A (Tc)
Rds On (Max) @ Id, Vgs: 40mOhm @ 28A, 10V
Power Dissipation (Max): 300W (Tc)
Vgs(th) (Max) @ Id: 4V @ 250µA
Supplier Device Package: TO-247AC
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 200 V
Gate Charge (Qg) (Max) @ Vgs: 234 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 4057 pF @ 25 V
Voltage Coupled to Gate Charge (Qg) (Max) @ Vgs: 10
Voltage Coupled to Input Capacitance (Ciss) (Max) @ Vds: 25
на замовлення 4288 шт:
термін постачання 21-31 дні (днів)
2+253.61 грн
25+124.92 грн
100+111.68 грн
500+81.92 грн
1000+78.37 грн
2000+76.49 грн
Мінімальне замовлення: 2
В кошику  од. на суму  грн.
IRFS3307ZTRLPBF IRFS3307ZTRLPBF Infineon Technologies irfs3307zpbf.pdf?fileId=5546d462533600a40153563691d7216c Description: MOSFET N-CH 75V 120A D2PAK
Packaging: Tape & Reel (TR)
Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 120A (Tc)
Rds On (Max) @ Id, Vgs: 5.8mOhm @ 75A, 10V
Power Dissipation (Max): 230W (Tc)
Vgs(th) (Max) @ Id: 4V @ 150µA
Supplier Device Package: D2PAK
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 75 V
Gate Charge (Qg) (Max) @ Vgs: 110 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 4750 pF @ 50 V
на замовлення 3200 шт:
термін постачання 21-31 дні (днів)
800+106.74 грн
1600+100.59 грн
Мінімальне замовлення: 800
В кошику  од. на суму  грн.
IRFSL4229PBF IRFSL4229PBF Infineon Technologies IRFSL4229PBF.pdf Description: MOSFET N-CH 250V 45A TO262
Packaging: Tube
Package / Case: TO-262-3 Long Leads, I2PAK, TO-262AA
Mounting Type: Through Hole
Operating Temperature: -40°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 45A (Tc)
Rds On (Max) @ Id, Vgs: 48mOhm @ 26A, 10V
Power Dissipation (Max): 330W (Tc)
Vgs(th) (Max) @ Id: 5V @ 250µA
Supplier Device Package: TO-262
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±30V
Drain to Source Voltage (Vdss): 250 V
Gate Charge (Qg) (Max) @ Vgs: 110 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 4560 pF @ 25 V
товару немає в наявності
В кошику  од. на суму  грн.
IRG6IC30U-110P IRG6IC30U-110P Infineon Technologies Part_Number_Guide_Web.pdf Description: IGBT 330V 28A 43W TO220ABFP
Packaging: Tube
Package / Case: TO-220-3 Full Pack
Mounting Type: Through Hole
Input Type: Standard
Vce(on) (Max) @ Vge, Ic: 2.38V @ 15V, 120A
Supplier Device Package: TO-220AB Full-Pak
IGBT Type: Trench
Current - Collector (Ic) (Max): 28 A
Voltage - Collector Emitter Breakdown (Max): 330 V
Power - Max: 43 W
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IRG6IC30UPBF IRG6IC30UPBF Infineon Technologies Part_Number_Guide_Web.pdf Description: IGBT 600V 25A 37W TO220ABFP
Packaging: Tube
Package / Case: TO-220-3 Full Pack
Mounting Type: Through Hole
Operating Temperature: -40°C ~ 150°C (TJ)
Input Type: Standard
Vce(on) (Max) @ Vge, Ic: 2.88V @ 15V, 120A
Supplier Device Package: TO-220AB Full-Pak
IGBT Type: Trench
Td (on/off) @ 25°C: 20ns/160ns
Test Condition: 400V, 25A, 10Ohm
Gate Charge: 79 nC
Part Status: Obsolete
Current - Collector (Ic) (Max): 25 A
Voltage - Collector Emitter Breakdown (Max): 600 V
Power - Max: 37 W
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IRG6S320UTRLPBF IRG6S320UTRLPBF Infineon Technologies IRG6S320UPbF.pdf Description: IGBT 330V 50A 114W D2PAK
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IRG6S330UPBF IRG6S330UPBF Infineon Technologies Part_Number_Guide_Web.pdf Description: IGBT 330V 70A 160W D2PAK
Packaging: Tube
Package / Case: TO-263-3, D²Pak (2 Leads + Tab), TO-263AB
Mounting Type: Surface Mount
Operating Temperature: -40°C ~ 150°C (TJ)
Input Type: Standard
Vce(on) (Max) @ Vge, Ic: 2.1V @ 15V, 70A
Supplier Device Package: D2PAK
IGBT Type: Trench
Td (on/off) @ 25°C: 39ns/120ns
Test Condition: 196V, 25A, 10Ohm
Gate Charge: 86 nC
Part Status: Obsolete
Current - Collector (Ic) (Max): 70 A
Voltage - Collector Emitter Breakdown (Max): 330 V
Power - Max: 160 W
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IRG7PH30K10PBF IRG7PH30K10PBF Infineon Technologies IRG7PH30K10PBF.pdf Description: IGBT 1200V 33A 210W TO247AC
Packaging: Tube
Package / Case: TO-247-3
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 175°C (TJ)
Input Type: Standard
Vce(on) (Max) @ Vge, Ic: 2.35V @ 15V, 9A
Supplier Device Package: TO-247AC
IGBT Type: Trench
Td (on/off) @ 25°C: 14ns/110ns
Switching Energy: 530µJ (on), 380µJ (off)
Test Condition: 600V, 9A, 22Ohm, 15V
Gate Charge: 45 nC
Part Status: Obsolete
Current - Collector (Ic) (Max): 33 A
Voltage - Collector Emitter Breakdown (Max): 1200 V
Current - Collector Pulsed (Icm): 27 A
Power - Max: 210 W
товару немає в наявності
В кошику  од. на суму  грн.
IRG7PH35UDPBF IRG7PH35UDPBF Infineon Technologies irg7ph35udpbf.pdf?fileId=5546d462533600a40153564d601323ad Description: IGBT TRENCH 1200V 50A TO-247AC
Packaging: Tube
Package / Case: TO-247-3
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Input Type: Standard
Reverse Recovery Time (trr): 105 ns
Vce(on) (Max) @ Vge, Ic: 2.2V @ 15V, 20A
Supplier Device Package: TO-247AC
IGBT Type: Trench
Td (on/off) @ 25°C: 30ns/160ns
Switching Energy: 1.06mJ (on), 620µJ (off)
Test Condition: 600V, 20A, 10Ohm, 15V
Gate Charge: 85 nC
Part Status: Obsolete
Current - Collector (Ic) (Max): 50 A
Voltage - Collector Emitter Breakdown (Max): 1200 V
Current - Collector Pulsed (Icm): 60 A
Power - Max: 180 W
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IRG7PH42UD1PBF IRG7PH42UD1PBF Infineon Technologies fundamentals-of-power-semiconductors Description: IGBT TRENCH 1200V 85A TO-247AC
Packaging: Tube
Package / Case: TO-247-3
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Input Type: Standard
Vce(on) (Max) @ Vge, Ic: 2V @ 15V, 30A
Supplier Device Package: TO-247AC
IGBT Type: Trench
Td (on/off) @ 25°C: -/270ns
Switching Energy: 1.21mJ (off)
Test Condition: 600V, 30A, 10Ohm, 15V
Gate Charge: 180 nC
Part Status: Obsolete
Current - Collector (Ic) (Max): 85 A
Voltage - Collector Emitter Breakdown (Max): 1200 V
Current - Collector Pulsed (Icm): 200 A
Power - Max: 313 W
товару немає в наявності
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IRG7PH46UDPBF IRG7PH46UDPBF Infineon Technologies fundamentals-of-power-semiconductors Description: IGBT TRENCH 1200V 40A TO-247AC
Packaging: Tube
Package / Case: TO-247-3
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Input Type: Standard
Reverse Recovery Time (trr): 140 ns
Vce(on) (Max) @ Vge, Ic: 2V @ 15V, 40A
Supplier Device Package: TO-247AC
IGBT Type: Trench
Td (on/off) @ 25°C: 45ns/410ns
Switching Energy: 2.61mJ (on), 1.85mJ (off)
Test Condition: 600V, 40A, 10Ohm, 15V
Gate Charge: 220 nC
Part Status: Obsolete
Current - Collector (Ic) (Max): 40 A
Voltage - Collector Emitter Breakdown (Max): 1200 V
Current - Collector Pulsed (Icm): 160 A
Power - Max: 390 W
товару немає в наявності
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IRGB4086PBF IRGB4086PBF Infineon Technologies IRGB(S)4086PbF.pdf Description: IGBT 300V 70A 160W TO220AB
Packaging: Tube
Package / Case: TO-220-3
Mounting Type: Through Hole
Operating Temperature: -40°C ~ 150°C (TJ)
Input Type: Standard
Vce(on) (Max) @ Vge, Ic: 2.96V @ 15V, 120A
Supplier Device Package: TO-220AB
IGBT Type: Trench
Td (on/off) @ 25°C: 36ns/112ns
Test Condition: 196V, 25A, 10Ohm
Gate Charge: 65 nC
Current - Collector (Ic) (Max): 70 A
Voltage - Collector Emitter Breakdown (Max): 300 V
Power - Max: 160 W
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IRGI4086PBF IRGI4086PBF Infineon Technologies IRGI4086PbF.pdf Description: IGBT TRENCH 300V 25A TO220AB FP
Packaging: Tube
Package / Case: TO-220-3 Full Pack
Mounting Type: Through Hole
Operating Temperature: -40°C ~ 150°C (TJ)
Input Type: Standard
Vce(on) (Max) @ Vge, Ic: 2.96V @ 15V, 120A
Supplier Device Package: TO-220AB Full-Pak
IGBT Type: Trench
Td (on/off) @ 25°C: 36ns/112ns
Test Condition: 196V, 25A, 10Ohm
Gate Charge: 65 nC
Current - Collector (Ic) (Max): 25 A
Voltage - Collector Emitter Breakdown (Max): 300 V
Power - Max: 43 W
товару немає в наявності
В кошику  од. на суму  грн.
IRGP4063PBF IRGP4063PBF Infineon Technologies IRSDS11858-1.pdf?t.download=true&u=5oefqw Description: IGBT TRENCH 600V 96A TO-247AC
Packaging: Tube
Package / Case: TO-247-3
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 175°C (TJ)
Input Type: Standard
Vce(on) (Max) @ Vge, Ic: 2.14V @ 15V, 48A
Supplier Device Package: TO-247AC
IGBT Type: Trench
Td (on/off) @ 25°C: 60ns/145ns
Switching Energy: 625µJ (on), 1.28mJ (off)
Test Condition: 400V, 48A, 10Ohm, 15V
Gate Charge: 95 nC
Part Status: Obsolete
Current - Collector (Ic) (Max): 96 A
Voltage - Collector Emitter Breakdown (Max): 600 V
Current - Collector Pulsed (Icm): 144 A
Power - Max: 330 W
товару немає в наявності
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IRGP50B60PD1-EP IRGP50B60PD1-EP Infineon Technologies fundamentals-of-power-semiconductors Description: IGBT NPT 600V 75A TO-247AD
Packaging: Tube
Package / Case: TO-3P-3 Full Pack
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Input Type: Standard
Reverse Recovery Time (trr): 42 ns
Vce(on) (Max) @ Vge, Ic: 2.85V @ 15V, 50A
Supplier Device Package: TO-247AD
IGBT Type: NPT
Td (on/off) @ 25°C: 30ns/130ns
Switching Energy: 255µJ (on), 375µJ (off)
Test Condition: 390V, 33A, 3.3Ohm, 15V
Gate Charge: 205 nC
Part Status: Obsolete
Current - Collector (Ic) (Max): 75 A
Voltage - Collector Emitter Breakdown (Max): 600 V
Current - Collector Pulsed (Icm): 150 A
Power - Max: 390 W
товару немає в наявності
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IRGS4086PBF IRGS4086PBF Infineon Technologies IRGB(S)4086PbF.pdf Description: IGBT 300V 70A 160W D2PAK
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IRLB3036GPBF IRLB3036GPBF Infineon Technologies IRLB3036GPbF.pdf Description: MOSFET N-CH 60V 195A TO220AB
Packaging: Tube
Package / Case: TO-220-3
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 195A (Tc)
Rds On (Max) @ Id, Vgs: 2.4mOhm @ 165A, 10V
Power Dissipation (Max): 380W (Tc)
Vgs(th) (Max) @ Id: 2.5V @ 250µA
Supplier Device Package: TO-220AB
Part Status: Obsolete
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±16V
Drain to Source Voltage (Vdss): 60 V
Gate Charge (Qg) (Max) @ Vgs: 140 nC @ 4.5 V
Input Capacitance (Ciss) (Max) @ Vds: 11210 pF @ 50 V
товару немає в наявності
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IRLML0040TRPBF IRLML0040TRPBF Infineon Technologies irlml0040pbf.pdf?fileId=5546d462533600a401535664894825e4 Description: MOSFET N-CH 40V 3.6A SOT23
Packaging: Tape & Reel (TR)
Package / Case: TO-236-3, SC-59, SOT-23-3
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 3.6A (Ta)
Rds On (Max) @ Id, Vgs: 56mOhm @ 3.6A, 10V
Power Dissipation (Max): 1.3W (Ta)
Vgs(th) (Max) @ Id: 2.5V @ 25µA
Supplier Device Package: Micro3™/SOT-23
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±16V
Drain to Source Voltage (Vdss): 40 V
Gate Charge (Qg) (Max) @ Vgs: 3.9 nC @ 4.5 V
Input Capacitance (Ciss) (Max) @ Vds: 266 pF @ 25 V
на замовлення 63000 шт:
термін постачання 21-31 дні (днів)
3000+6.65 грн
6000+6.05 грн
9000+4.80 грн
15000+4.42 грн
Мінімальне замовлення: 3000
В кошику  од. на суму  грн.
IRLML2502GTRPBF IRLML2502GTRPBF Infineon Technologies irlml2502gpbf.pdf?fileId=5546d462533600a401535667fb882604 Description: MOSFET N-CH 20V 4.2A SOT23
Packaging: Tape & Reel (TR)
Package / Case: TO-236-3, SC-59, SOT-23-3
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 4.2A (Ta)
Rds On (Max) @ Id, Vgs: 45mOhm @ 4.2A, 4.5V
Power Dissipation (Max): 1.25W (Ta)
Vgs(th) (Max) @ Id: 1.2V @ 250µA
Supplier Device Package: Micro3™/SOT-23
Part Status: Discontinued at Digi-Key
Drive Voltage (Max Rds On, Min Rds On): 2.5V, 4.5V
Vgs (Max): ±12V
Drain to Source Voltage (Vdss): 20 V
Gate Charge (Qg) (Max) @ Vgs: 12 nC @ 5 V
Input Capacitance (Ciss) (Max) @ Vds: 740 pF @ 15 V
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IRLML2803GTRPBF IRLML2803GTRPBF Infineon Technologies irlml2803gpbf.pdf?fileId=5546d462533600a4015356681f1b260d Description: MOSFET N-CH 30V 1.2A SOT-23-3
Packaging: Tape & Reel (TR)
Package / Case: TO-236-3, SC-59, SOT-23-3
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 1.2A (Ta)
Rds On (Max) @ Id, Vgs: 250mOhm @ 910mA, 10V
Power Dissipation (Max): 540mW (Ta)
Vgs(th) (Max) @ Id: 1V @ 250µA
Supplier Device Package: Micro3™/SOT-23
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 30 V
Gate Charge (Qg) (Max) @ Vgs: 5 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 85 pF @ 25 V
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IRLML5103GTRPBF IRLML5103GTRPBF Infineon Technologies irlml5103gpbf.pdf?fileId=5546d462533600a40153566844fd2615 Description: MOSFET P-CH 30V 0.76A SOT-23-3
Packaging: Tape & Reel (TR)
Package / Case: TO-236-3, SC-59, SOT-23-3
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: P-Channel
Current - Continuous Drain (Id) @ 25°C: 760mA (Ta)
Rds On (Max) @ Id, Vgs: 600mOhm @ 600mA, 10V
Power Dissipation (Max): 540mW (Ta)
Vgs(th) (Max) @ Id: 1V @ 250µA
Supplier Device Package: Micro3™/SOT-23
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 30 V
Gate Charge (Qg) (Max) @ Vgs: 5.1 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 75 pF @ 25 V
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IRLML5203GTRPBF IRLML5203GTRPBF Infineon Technologies irlml5203gpbf.pdf?fileId=5546d462533600a40153566861dc261b Description: MOSFET P-CH 30V 3A SOT-23-3
Packaging: Tape & Reel (TR)
Package / Case: TO-236-3, SC-59, SOT-23-3
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: P-Channel
Current - Continuous Drain (Id) @ 25°C: 3A (Ta)
Rds On (Max) @ Id, Vgs: 98mOhm @ 3A, 10V
Power Dissipation (Max): 1.25W (Ta)
Vgs(th) (Max) @ Id: 2.5V @ 250µA
Supplier Device Package: Micro3™/SOT-23
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 30 V
Gate Charge (Qg) (Max) @ Vgs: 14 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 510 pF @ 25 V
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IRLML6402GTRPBF IRLML6402GTRPBF Infineon Technologies irlml6402gpbf.pdf?fileId=5546d462533600a401535668ccbf263a Description: MOSFET P-CH 20V 3.7A SOT23
Packaging: Tape & Reel (TR)
Package / Case: TO-236-3, SC-59, SOT-23-3
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: P-Channel
Current - Continuous Drain (Id) @ 25°C: 3.7A (Ta)
Rds On (Max) @ Id, Vgs: 65mOhm @ 3.7A, 4.5V
Power Dissipation (Max): 1.3W (Ta)
Vgs(th) (Max) @ Id: 1.2V @ 250µA
Supplier Device Package: Micro3™/SOT-23
Part Status: Discontinued at Digi-Key
Drive Voltage (Max Rds On, Min Rds On): 2.5V, 4.5V
Vgs (Max): ±12V
Drain to Source Voltage (Vdss): 20 V
Gate Charge (Qg) (Max) @ Vgs: 12 nC @ 5 V
Input Capacitance (Ciss) (Max) @ Vds: 633 pF @ 10 V
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IRLML9303TRPBF IRLML9303TRPBF Infineon Technologies irlml9303pbf.pdf?fileId=5546d462533600a401535668ef1d2642 Description: MOSFET P-CH 30V 2.3A SOT23
Packaging: Tape & Reel (TR)
Package / Case: TO-236-3, SC-59, SOT-23-3
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: P-Channel
Current - Continuous Drain (Id) @ 25°C: 2.3A (Ta)
Rds On (Max) @ Id, Vgs: 165mOhm @ 2.3A, 10V
Power Dissipation (Max): 1.25W (Ta)
Vgs(th) (Max) @ Id: 2.4V @ 10µA
Supplier Device Package: Micro3™/SOT-23
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 30 V
Gate Charge (Qg) (Max) @ Vgs: 2 nC @ 4.5 V
Input Capacitance (Ciss) (Max) @ Vds: 160 pF @ 25 V
на замовлення 12000 шт:
термін постачання 21-31 дні (днів)
3000+5.28 грн
6000+4.80 грн
9000+4.23 грн
Мінімальне замовлення: 3000
В кошику  од. на суму  грн.
IRLP3034PBF IRLP3034PBF Infineon Technologies irlp3034pbf.pdf?fileId=5546d462533600a4015356693edf2656 Description: MOSFET N-CH 40V 195A TO247AC
Packaging: Tube
Package / Case: TO-247-3
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 195A (Tc)
Rds On (Max) @ Id, Vgs: 1.7mOhm @ 195A, 10V
Power Dissipation (Max): 341W (Tc)
Vgs(th) (Max) @ Id: 2.5V @ 250µA
Supplier Device Package: TO-247AC
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 40 V
Gate Charge (Qg) (Max) @ Vgs: 162 nC @ 4.5 V
Input Capacitance (Ciss) (Max) @ Vds: 10315 pF @ 25 V
на замовлення 171 шт:
термін постачання 21-31 дні (днів)
1+370.91 грн
25+193.85 грн
100+171.19 грн
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IRLR024ZTRPBF IRLR024ZTRPBF Infineon Technologies IRLR024ZPbF%2C%20IRLU024ZPbF.pdf Description: MOSFET N-CH 55V 16A DPAK
Packaging: Tape & Reel (TR)
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 16A (Tc)
Rds On (Max) @ Id, Vgs: 58mOhm @ 9.6A, 10V
Power Dissipation (Max): 35W (Tc)
Vgs(th) (Max) @ Id: 3V @ 250µA
Supplier Device Package: TO-252AA (DPAK)
Part Status: Obsolete
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±16V
Drain to Source Voltage (Vdss): 55 V
Gate Charge (Qg) (Max) @ Vgs: 9.9 nC @ 5 V
Input Capacitance (Ciss) (Max) @ Vds: 380 pF @ 25 V
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IRLR8726TRPBF IRLR8726TRPBF Infineon Technologies irlr8726pbf.pdf?fileId=5546d462533600a40153567181dd26f7 Description: MOSFET N-CH 30V 86A DPAK
Packaging: Tape & Reel (TR)
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 86A (Tc)
Rds On (Max) @ Id, Vgs: 5.8mOhm @ 25A, 10V
Power Dissipation (Max): 75W (Tc)
Vgs(th) (Max) @ Id: 2.35V @ 50µA
Supplier Device Package: TO-252AA (DPAK)
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 30 V
Gate Charge (Qg) (Max) @ Vgs: 23 nC @ 4.5 V
Input Capacitance (Ciss) (Max) @ Vds: 2150 pF @ 15 V
на замовлення 66000 шт:
термін постачання 21-31 дні (днів)
2000+15.97 грн
4000+13.09 грн
6000+12.70 грн
10000+11.81 грн
14000+11.40 грн
20000+11.18 грн
Мінімальне замовлення: 2000
В кошику  од. на суму  грн.
IRLR8729TRPBF IRLR8729TRPBF Infineon Technologies irlr8729pbf.pdf?fileId=5546d462533600a4015356718abb26fa Description: MOSFET N-CH 30V 58A DPAK
Packaging: Tape & Reel (TR)
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 58A (Tc)
Rds On (Max) @ Id, Vgs: 8.9mOhm @ 25A, 10V
Power Dissipation (Max): 55W (Tc)
Vgs(th) (Max) @ Id: 2.35V @ 25µA
Supplier Device Package: TO-252AA (DPAK)
Part Status: Obsolete
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 30 V
Gate Charge (Qg) (Max) @ Vgs: 16 nC @ 4.5 V
Input Capacitance (Ciss) (Max) @ Vds: 1350 pF @ 15 V
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IRLU8726PBF IRLU8726PBF Infineon Technologies irlr8726pbf.pdf?fileId=5546d462533600a40153567181dd26f7 description Description: MOSFET N-CH 30V 86A IPAK
Packaging: Tube
Package / Case: TO-251-3 Short Leads, IPak, TO-251AA
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 86A (Tc)
Rds On (Max) @ Id, Vgs: 5.8mOhm @ 25A, 10V
Power Dissipation (Max): 75W (Tc)
Vgs(th) (Max) @ Id: 2.35V @ 50µA
Supplier Device Package: IPAK
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 30 V
Gate Charge (Qg) (Max) @ Vgs: 23 nC @ 4.5 V
Input Capacitance (Ciss) (Max) @ Vds: 2150 pF @ 15 V
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IRPLHID2 IRPLHID2 Infineon Technologies irplhid2.pdf?fileId=5546d462533600a4015356a011722c87 Description: EVAL BOARD FOR IRS2573D
Packaging: Box
Function: Ballast Control
Type: Opto/Lighting
Contents: Board(s)
Utilized IC / Part: IRS2573D
Supplied Contents: Board(s)
Secondary Attributes: Short-Circuit Protection
Embedded: No
Part Status: Obsolete
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IRS210614SPBF IRS210614SPBF Infineon Technologies fundamentals-of-power-semiconductors Description: IC GATE DRVR HALF-BRIDGE 14SOIC
Packaging: Tube
Package / Case: 14-SOIC (0.154", 3.90mm Width)
Mounting Type: Surface Mount
Operating Temperature: -40°C ~ 150°C (TJ)
Voltage - Supply: 10V ~ 20V
Input Type: Non-Inverting
High Side Voltage - Max (Bootstrap): 600 V
Supplier Device Package: 14-SOIC
Rise / Fall Time (Typ): 100ns, 35ns
Channel Type: Independent
Driven Configuration: Half-Bridge
Number of Drivers: 2
Gate Type: IGBT, MOSFET (N-Channel)
Logic Voltage - VIL, VIH: 0.8V, 2.5V
Current - Peak Output (Source, Sink): 290mA, 600mA
DigiKey Programmable: Not Verified
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IRS21571DSPBF IRS21571DSPBF Infineon Technologies IRS21571D.pdf Description: IC BALLAST CNTRL 48.3KHZ 16SOIC
Packaging: Tube
Package / Case: 16-SOIC (0.154", 3.90mm Width)
Mounting Type: Surface Mount
Frequency: 43.7kHz ~ 48.3kHz
Type: Ballast Controller
Operating Temperature: -40°C ~ 125°C
Voltage - Supply: 11.5V ~ 15.6V
Supplier Device Package: 16-SOIC
Part Status: Obsolete
Current - Supply: 10 mA
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IRS21850SPBF IRS21850SPBF Infineon Technologies fundamentals-of-power-semiconductors Description: IC GATE DRVR HIGH-SIDE 8SOIC
Packaging: Tube
Package / Case: 8-SOIC (0.154", 3.90mm Width)
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Voltage - Supply: 10V ~ 20V
Input Type: Non-Inverting
High Side Voltage - Max (Bootstrap): 600 V
Supplier Device Package: 8-SOIC
Rise / Fall Time (Typ): 15ns, 15ns
Channel Type: Single
Driven Configuration: High-Side
Number of Drivers: 1
Gate Type: IGBT, N-Channel MOSFET
Logic Voltage - VIL, VIH: 0.8V, 2.5V
Current - Peak Output (Source, Sink): 4A, 4A
Part Status: Obsolete
DigiKey Programmable: Not Verified
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IRF7406GTRPBF IRF7406GPBF.pdf
IRF7406GTRPBF
Виробник: Infineon Technologies
Description: MOSFET P-CH 30V 5.8A 8SO
Packaging: Tape & Reel (TR)
Package / Case: 8-SOIC (0.154", 3.90mm Width)
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: P-Channel
Current - Continuous Drain (Id) @ 25°C: 5.8A (Ta)
Rds On (Max) @ Id, Vgs: 45mOhm @ 2.8A, 10V
Power Dissipation (Max): 2.5W (Ta)
Vgs(th) (Max) @ Id: 1V @ 250µA
Supplier Device Package: 8-SO
Part Status: Obsolete
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 30 V
Gate Charge (Qg) (Max) @ Vgs: 59 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 1100 pF @ 25 V
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IRF7413GTRPBF IRF7413GPBF.pdf
IRF7413GTRPBF
Виробник: Infineon Technologies
Description: MOSFET N-CH 30V 13A 8SO
Packaging: Tape & Reel (TR)
Package / Case: 8-SOIC (0.154", 3.90mm Width)
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 13A (Ta)
Rds On (Max) @ Id, Vgs: 11mOhm @ 7.3A, 10V
Power Dissipation (Max): 2.5W (Ta)
Vgs(th) (Max) @ Id: 3V @ 250µA
Supplier Device Package: 8-SO
Part Status: Obsolete
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 30 V
Gate Charge (Qg) (Max) @ Vgs: 79 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 1800 pF @ 25 V
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IRF7413ZGTRPBF IRF7413ZGPBF.pdf
IRF7413ZGTRPBF
Виробник: Infineon Technologies
Description: MOSFET N-CH 30V 13A 8SO
Packaging: Tape & Reel (TR)
Package / Case: 8-SOIC (0.154", 3.90mm Width)
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 13A (Ta)
Rds On (Max) @ Id, Vgs: 10mOhm @ 13A, 10V
Power Dissipation (Max): 2.5W (Ta)
Vgs(th) (Max) @ Id: 2.25V @ 25µA
Supplier Device Package: 8-SO
Part Status: Obsolete
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 30 V
Gate Charge (Qg) (Max) @ Vgs: 14 nC @ 4.5 V
Input Capacitance (Ciss) (Max) @ Vds: 1210 pF @ 15 V
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IRF7416GTRPBF irf7416gpbf.pdf
IRF7416GTRPBF
Виробник: Infineon Technologies
Description: MOSFET P-CH 30V 10A 8SO
Packaging: Tape & Reel (TR)
Package / Case: 8-SOIC (0.154", 3.90mm Width)
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: P-Channel
Current - Continuous Drain (Id) @ 25°C: 10A (Ta)
Rds On (Max) @ Id, Vgs: 20mOhm @ 5.6A, 10V
Power Dissipation (Max): 2.5W (Ta)
Vgs(th) (Max) @ Id: 1V @ 250µA
Supplier Device Package: 8-SO
Part Status: Obsolete
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 30 V
Gate Charge (Qg) (Max) @ Vgs: 92 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 1700 pF @ 25 V
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IRF7424GTRPBF irf7424gpbf.pdf
IRF7424GTRPBF
Виробник: Infineon Technologies
Description: MOSFET P-CH 30V 11A 8SO
Packaging: Tape & Reel (TR)
Package / Case: 8-SOIC (0.154", 3.90mm Width)
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: P-Channel
Current - Continuous Drain (Id) @ 25°C: 11A (Ta)
Rds On (Max) @ Id, Vgs: 13.5mOhm @ 11A, 10V
Power Dissipation (Max): 2.5W (Ta)
Vgs(th) (Max) @ Id: 2.5V @ 250µA
Supplier Device Package: 8-SO
Part Status: Obsolete
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 30 V
Gate Charge (Qg) (Max) @ Vgs: 110 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 4030 pF @ 25 V
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IRF7524D1GTRPBF IRF7524D1GPBF.pdf
IRF7524D1GTRPBF
Виробник: Infineon Technologies
Description: MOSFET P-CH 20V 1.7A 8USMD
Packaging: Tape & Reel (TR)
Package / Case: 8-TSSOP, 8-MSOP (0.118", 3.00mm Width)
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: P-Channel
Current - Continuous Drain (Id) @ 25°C: 1.7A (Ta)
Rds On (Max) @ Id, Vgs: 270mOhm @ 1.2A, 4.5V
FET Feature: Schottky Diode (Isolated)
Power Dissipation (Max): 1.25W (Ta)
Vgs(th) (Max) @ Id: 700mV @ 250µA (Min)
Supplier Device Package: 8-uSMD
Part Status: Obsolete
Drive Voltage (Max Rds On, Min Rds On): 2.7V, 4.5V
Vgs (Max): ±12V
Drain to Source Voltage (Vdss): 20 V
Gate Charge (Qg) (Max) @ Vgs: 8.2 nC @ 4.5 V
Input Capacitance (Ciss) (Max) @ Vds: 240 pF @ 15 V
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IRF7811WGTRPBF irf7811wgpbf.pdf
IRF7811WGTRPBF
Виробник: Infineon Technologies
Description: MOSFET N-CH 30V 14A 8SO
Packaging: Tape & Reel (TR)
Package / Case: 8-SOIC (0.154", 3.90mm Width)
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 14A (Ta)
Rds On (Max) @ Id, Vgs: 12mOhm @ 15A, 4.5V
Power Dissipation (Max): 3.1W (Ta)
Vgs(th) (Max) @ Id: 1V @ 250µA
Supplier Device Package: 8-SO
Part Status: Obsolete
Drive Voltage (Max Rds On, Min Rds On): 4.5V
Vgs (Max): ±12V
Drain to Source Voltage (Vdss): 30 V
Gate Charge (Qg) (Max) @ Vgs: 33 nC @ 5 V
Input Capacitance (Ciss) (Max) @ Vds: 2335 pF @ 16 V
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IRF7821GTRPBF IRF7821GPBF.pdf
IRF7821GTRPBF
Виробник: Infineon Technologies
Description: MOSFET N-CH 30V 13.6A 8SO
Packaging: Tape & Reel (TR)
Package / Case: 8-SOIC (0.154", 3.90mm Width)
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 155°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 13.6A (Ta)
Rds On (Max) @ Id, Vgs: 9.1mOhm @ 13A, 10V
Power Dissipation (Max): 2.5W (Ta)
Vgs(th) (Max) @ Id: 1V @ 250µA
Supplier Device Package: 8-SO
Part Status: Obsolete
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 30 V
Gate Charge (Qg) (Max) @ Vgs: 14 nC @ 4.5 V
Input Capacitance (Ciss) (Max) @ Vds: 1010 pF @ 15 V
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IRF8113GTRPBF IRF8113GPBF.pdf
IRF8113GTRPBF
Виробник: Infineon Technologies
Description: MOSFET N-CH 30V 17.2A 8SO
Packaging: Tape & Reel (TR)
Package / Case: 8-SOIC (0.154", 3.90mm Width)
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 17.2A (Ta)
Rds On (Max) @ Id, Vgs: 5.6mOhm @ 17.2A, 10V
Power Dissipation (Max): 2.5W (Ta)
Vgs(th) (Max) @ Id: 2.2V @ 250µA
Supplier Device Package: 8-SO
Part Status: Obsolete
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 30 V
Gate Charge (Qg) (Max) @ Vgs: 36 nC @ 4.5 V
Input Capacitance (Ciss) (Max) @ Vds: 2910 pF @ 15 V
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IRF8852TRPBF IRF8852PBF.pdf
IRF8852TRPBF
Виробник: Infineon Technologies
Description: MOSFET 2N-CH 25V 7.8A 8TSSOP
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IRF8910GTRPBF irf8910gpbf.pdf?fileId=5546d462533600a401535610e2721d8b
IRF8910GTRPBF
Виробник: Infineon Technologies
Description: MOSFET 2N-CH 20V 10A 8SO
Packaging: Tape & Reel (TR)
Package / Case: 8-SOIC (0.154", 3.90mm Width)
Mounting Type: Surface Mount
Configuration: 2 N-Channel (Dual)
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
Power - Max: 2W
Drain to Source Voltage (Vdss): 20V
Current - Continuous Drain (Id) @ 25°C: 10A
Input Capacitance (Ciss) (Max) @ Vds: 960pF @ 10V
Rds On (Max) @ Id, Vgs: 13.4mOhm @ 10A, 10V
Gate Charge (Qg) (Max) @ Vgs: 11nC @ 4.5V
FET Feature: Logic Level Gate
Vgs(th) (Max) @ Id: 2.55V @ 250µA
Supplier Device Package: 8-SO
Part Status: Obsolete
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IRF9204PBF IRF9204PbF.pdf
IRF9204PBF
Виробник: Infineon Technologies
Description: MOSFET P-CH 40V 56A TO220AB
Packaging: Tube
Package / Case: TO-220-3
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: P-Channel
Current - Continuous Drain (Id) @ 25°C: 56A (Ta)
Rds On (Max) @ Id, Vgs: 16mOhm @ 37A, 10V
Power Dissipation (Max): 143W (Tc)
Vgs(th) (Max) @ Id: 3V @ 100µA
Supplier Device Package: TO-220AB
Part Status: Obsolete
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 40 V
Gate Charge (Qg) (Max) @ Vgs: 224 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 7676 pF @ 25 V
товару немає в наявності
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IRF9317TRPBF irf9317pbf.pdf?fileId=5546d462533600a4015356111d801d99
IRF9317TRPBF
Виробник: Infineon Technologies
Description: MOSFET P-CH 30V 16A 8SO
Packaging: Tape & Reel (TR)
Package / Case: 8-SOIC (0.154", 3.90mm Width)
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: P-Channel
Current - Continuous Drain (Id) @ 25°C: 16A (Ta)
Rds On (Max) @ Id, Vgs: 6.6mOhm @ 16A, 10V
Power Dissipation (Max): 2.5W (Ta)
Vgs(th) (Max) @ Id: 2.4V @ 50µA
Supplier Device Package: 8-SO
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 30 V
Gate Charge (Qg) (Max) @ Vgs: 92 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 2820 pF @ 15 V
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IRF9321TRPBF irf9321pbf.pdf?fileId=5546d462533600a40153561125fc1d9b
IRF9321TRPBF
Виробник: Infineon Technologies
Description: MOSFET P-CH 30V 15A 8SO
Packaging: Tape & Reel (TR)
Package / Case: 8-SOIC (0.154", 3.90mm Width)
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: P-Channel
Current - Continuous Drain (Id) @ 25°C: 15A (Ta)
Rds On (Max) @ Id, Vgs: 7.2mOhm @ 15A, 10V
Power Dissipation (Max): 2.5W (Ta)
Vgs(th) (Max) @ Id: 2.4V @ 50µA
Supplier Device Package: 8-SO
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 30 V
Gate Charge (Qg) (Max) @ Vgs: 98 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 2590 pF @ 25 V
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IRF9328TRPBF irf9328pbf.pdf?fileId=5546d462533600a4015356112e591d9d
IRF9328TRPBF
Виробник: Infineon Technologies
Description: MOSFET P-CH 30V 12A 8SO
Packaging: Tape & Reel (TR)
Package / Case: 8-SOIC (0.154", 3.90mm Width)
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: P-Channel
Current - Continuous Drain (Id) @ 25°C: 12A (Tc)
Rds On (Max) @ Id, Vgs: 11.9mOhm @ 12A, 10V
Power Dissipation (Max): 2.5W (Ta)
Vgs(th) (Max) @ Id: 2.4V @ 25µA
Supplier Device Package: 8-SO
Part Status: Obsolete
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 30 V
Gate Charge (Qg) (Max) @ Vgs: 52 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 1680 pF @ 25 V
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IRF9333TRPBF irf9333pbf.pdf?fileId=5546d462533600a4015356113f1c1da1
IRF9333TRPBF
Виробник: Infineon Technologies
Description: MOSFET P-CH 30V 9.2A 8SO
Packaging: Tape & Reel (TR)
Package / Case: 8-SOIC (0.154", 3.90mm Width)
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: P-Channel
Current - Continuous Drain (Id) @ 25°C: 9.2A (Ta)
Rds On (Max) @ Id, Vgs: 19.4mOhm @ 9.2A, 10V
Power Dissipation (Max): 2.5W (Ta)
Vgs(th) (Max) @ Id: 2.4V @ 25µA
Supplier Device Package: 8-SO
Part Status: Obsolete
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 30 V
Gate Charge (Qg) (Max) @ Vgs: 38 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 1110 pF @ 25 V
товару немає в наявності
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IRF9335TRPBF irf9335pbf.pdf?fileId=5546d462533600a40153561147881da3
IRF9335TRPBF
Виробник: Infineon Technologies
Description: MOSFET P-CH 30V 5.4A 8SO
Packaging: Tape & Reel (TR)
Package / Case: 8-SOIC (0.154", 3.90mm Width)
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: P-Channel
Current - Continuous Drain (Id) @ 25°C: 5.4A (Ta)
Rds On (Max) @ Id, Vgs: 59mOhm @ 5.4A, 10V
Power Dissipation (Max): 2.5W (Ta)
Vgs(th) (Max) @ Id: 2.4V @ 10µA
Supplier Device Package: 8-SO
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 30 V
Gate Charge (Qg) (Max) @ Vgs: 14 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 386 pF @ 25 V
на замовлення 8000 шт:
термін постачання 21-31 дні (днів)
Кількість Ціна
4000+18.44 грн
8000+16.78 грн
Мінімальне замовлення: 4000
В кошику  од. на суму  грн.
IRF9362TRPBF irf9362pbf.pdf?fileId=5546d462533600a40153561158c41da7
IRF9362TRPBF
Виробник: Infineon Technologies
Description: MOSFET 2P-CH 30V 8A 8SO
Packaging: Tape & Reel (TR)
Package / Case: 8-SOIC (0.154", 3.90mm Width)
Mounting Type: Surface Mount
Configuration: 2 P-Channel (Dual)
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
Power - Max: 2W
Drain to Source Voltage (Vdss): 30V
Current - Continuous Drain (Id) @ 25°C: 8A
Input Capacitance (Ciss) (Max) @ Vds: 1300pF @ 25V
Rds On (Max) @ Id, Vgs: 21mOhm @ 8A, 10V
Gate Charge (Qg) (Max) @ Vgs: 39nC @ 10V
FET Feature: Logic Level Gate
Vgs(th) (Max) @ Id: 2.4V @ 25µA
Supplier Device Package: 8-SO
Part Status: Active
на замовлення 32000 шт:
термін постачання 21-31 дні (днів)
Кількість Ціна
4000+21.01 грн
8000+18.77 грн
Мінімальне замовлення: 4000
В кошику  од. на суму  грн.
IRF9388TRPBF irf9388pbf.pdf?fileId=5546d462533600a40153561170191dad
IRF9388TRPBF
Виробник: Infineon Technologies
Description: MOSFET P-CH 30V 12A 8SO
Packaging: Tape & Reel (TR)
Package / Case: 8-SOIC (0.154", 3.90mm Width)
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: P-Channel
Current - Continuous Drain (Id) @ 25°C: 12A (Ta)
Rds On (Max) @ Id, Vgs: 8.5mOhm @ 12A, 20V
Power Dissipation (Max): 2.5W (Ta)
Vgs(th) (Max) @ Id: 2.4V @ 25µA
Supplier Device Package: 8-SO
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V, 20V
Vgs (Max): ±25V
Drain to Source Voltage (Vdss): 30 V
Gate Charge (Qg) (Max) @ Vgs: 52 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 1680 pF @ 25 V
на замовлення 8000 шт:
термін постачання 21-31 дні (днів)
Кількість Ціна
4000+18.02 грн
8000+16.05 грн
Мінімальне замовлення: 4000
В кошику  од. на суму  грн.
IRF9393TRPBF irf9393pbf.pdf?fileId=5546d462533600a401535611877d1db3
IRF9393TRPBF
Виробник: Infineon Technologies
Description: MOSFET P-CH 30V 9.2A 8SO
Packaging: Tape & Reel (TR)
Package / Case: 8-SOIC (0.154", 3.90mm Width)
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: P-Channel
Current - Continuous Drain (Id) @ 25°C: 9.2A (Ta)
Rds On (Max) @ Id, Vgs: 13.3mOhm @ 9.2A, 20V
Power Dissipation (Max): 2.5W (Ta)
Vgs(th) (Max) @ Id: 2.4V @ 25µA
Supplier Device Package: 8-SO
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V, 20V
Vgs (Max): ±25V
Drain to Source Voltage (Vdss): 30 V
Gate Charge (Qg) (Max) @ Vgs: 38 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 1110 pF @ 25 V
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IRFB3077GPBF IRFB3077GPBF.pdf
IRFB3077GPBF
Виробник: Infineon Technologies
Description: MOSFET N-CH 75V 120A TO220AB
Packaging: Tube
Package / Case: TO-220-3
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 120A (Tc)
Rds On (Max) @ Id, Vgs: 3.3mOhm @ 75A, 10V
Power Dissipation (Max): 370W (Tc)
Vgs(th) (Max) @ Id: 4V @ 250µA
Supplier Device Package: TO-220AB
Part Status: Obsolete
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 75 V
Gate Charge (Qg) (Max) @ Vgs: 220 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 9400 pF @ 50 V
Voltage Coupled to Gate Charge (Qg) (Max) @ Vgs: 10
Voltage Coupled to Input Capacitance (Ciss) (Max) @ Vds: 50
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IRFB4310GPBF IRFB4310GPBF.pdf
IRFB4310GPBF
Виробник: Infineon Technologies
Description: MOSFET N-CH 100V 130A TO220AB
Packaging: Tube
Package / Case: TO-220-3
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 130A (Tc)
Rds On (Max) @ Id, Vgs: 7mOhm @ 75A, 10V
Power Dissipation (Max): 300W (Tc)
Vgs(th) (Max) @ Id: 4V @ 250µA
Supplier Device Package: TO-220AB
Part Status: Obsolete
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 100 V
Gate Charge (Qg) (Max) @ Vgs: 250 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 7670 pF @ 50 V
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IRFB4310ZGPBF IRFB4310ZGPBF.pdf
IRFB4310ZGPBF
Виробник: Infineon Technologies
Description: MOSFET N-CH 100V 120A TO220AB
Packaging: Tube
Package / Case: TO-220-3
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 120A (Tc)
Rds On (Max) @ Id, Vgs: 6mOhm @ 75A, 10V
Power Dissipation (Max): 250W (Tc)
Vgs(th) (Max) @ Id: 4V @ 150µA
Supplier Device Package: TO-220AB
Part Status: Obsolete
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 100 V
Gate Charge (Qg) (Max) @ Vgs: 170 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 6860 pF @ 50 V
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IRFH5303TR2PBF irfh5303pbf.pdf?fileId=5546d462533600a40153561b604a1ec5
IRFH5303TR2PBF
Виробник: Infineon Technologies
Description: MOSFET N-CH 30V 23A/82A 8PQFN
Packaging: Tape & Reel (TR)
Package / Case: 8-PowerVDFN
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 23A (Ta), 82A (Tc)
Rds On (Max) @ Id, Vgs: 4.2mOhm @ 49A, 10V
Power Dissipation (Max): 3.6W (Ta), 46W (Tc)
Vgs(th) (Max) @ Id: 2.35V @ 50µA
Supplier Device Package: 8-PQFN (5x6)
Part Status: Obsolete
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 30 V
Gate Charge (Qg) (Max) @ Vgs: 41 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 2190 pF @ 15 V
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IRFI4019HG-117P irfi4019hg-117p.pdf?fileId=5546d462533600a401535623e0901f71
IRFI4019HG-117P
Виробник: Infineon Technologies
Description: MOSFET 2N-CH 150V 8.7A TO220-5
Packaging: Tube
Package / Case: TO-220-5 Full Pack, Formed Leads
Mounting Type: Through Hole
Configuration: 2 N-Channel (Dual)
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
Power - Max: 18W
Drain to Source Voltage (Vdss): 150V
Current - Continuous Drain (Id) @ 25°C: 8.7A
Input Capacitance (Ciss) (Max) @ Vds: 810pF @ 25V
Rds On (Max) @ Id, Vgs: 95mOhm @ 5.2A, 10V
Gate Charge (Qg) (Max) @ Vgs: 20nC @ 10V
Vgs(th) (Max) @ Id: 4.9V @ 50µA
Supplier Device Package: TO-220-5 Full-Pak
товару немає в наявності
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IRFP150MPBF irfp150mpbf.pdf?fileId=5546d462533600a4015356285f3f1fd2
IRFP150MPBF
Виробник: Infineon Technologies
Description: MOSFET N-CH 100V 42A TO247AC
Packaging: Tube
Package / Case: TO-247-3
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 42A (Tc)
Rds On (Max) @ Id, Vgs: 36mOhm @ 23A, 10V
Power Dissipation (Max): 160W (Tc)
Vgs(th) (Max) @ Id: 4V @ 250µA
Supplier Device Package: TO-247AC
Part Status: Last Time Buy
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 100 V
Gate Charge (Qg) (Max) @ Vgs: 110 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 1900 pF @ 25 V
товару немає в наявності
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IRFP250MPBF IRLES00077-1.pdf?t.download=true&u=5oefqw
IRFP250MPBF
Виробник: Infineon Technologies
Description: MOSFET N-CH 200V 30A TO247AC
Packaging: Tube
Package / Case: TO-247-3
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 30A (Tc)
Rds On (Max) @ Id, Vgs: 75mOhm @ 18A, 10V
Power Dissipation (Max): 214W (Tc)
Vgs(th) (Max) @ Id: 4V @ 250µA
Supplier Device Package: TO-247AC
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 200 V
Gate Charge (Qg) (Max) @ Vgs: 123 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 2159 pF @ 25 V
на замовлення 2170 шт:
термін постачання 21-31 дні (днів)
Кількість Ціна
2+207.35 грн
25+110.99 грн
100+89.64 грн
500+68.08 грн
1000+62.92 грн
2000+59.21 грн
Мінімальне замовлення: 2
В кошику  од. на суму  грн.
IRFP260MPBF irfp260mpbf.pdf?fileId=5546d462533600a40153562894e91fe0
IRFP260MPBF
Виробник: Infineon Technologies
Description: MOSFET N-CH 200V 50A TO247AC
Packaging: Tube
Package / Case: TO-247-3
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 50A (Tc)
Rds On (Max) @ Id, Vgs: 40mOhm @ 28A, 10V
Power Dissipation (Max): 300W (Tc)
Vgs(th) (Max) @ Id: 4V @ 250µA
Supplier Device Package: TO-247AC
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 200 V
Gate Charge (Qg) (Max) @ Vgs: 234 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 4057 pF @ 25 V
Voltage Coupled to Gate Charge (Qg) (Max) @ Vgs: 10
Voltage Coupled to Input Capacitance (Ciss) (Max) @ Vds: 25
на замовлення 4288 шт:
термін постачання 21-31 дні (днів)
Кількість Ціна
2+253.61 грн
25+124.92 грн
100+111.68 грн
500+81.92 грн
1000+78.37 грн
2000+76.49 грн
Мінімальне замовлення: 2
В кошику  од. на суму  грн.
IRFS3307ZTRLPBF irfs3307zpbf.pdf?fileId=5546d462533600a40153563691d7216c
IRFS3307ZTRLPBF
Виробник: Infineon Technologies
Description: MOSFET N-CH 75V 120A D2PAK
Packaging: Tape & Reel (TR)
Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 120A (Tc)
Rds On (Max) @ Id, Vgs: 5.8mOhm @ 75A, 10V
Power Dissipation (Max): 230W (Tc)
Vgs(th) (Max) @ Id: 4V @ 150µA
Supplier Device Package: D2PAK
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 75 V
Gate Charge (Qg) (Max) @ Vgs: 110 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 4750 pF @ 50 V
на замовлення 3200 шт:
термін постачання 21-31 дні (днів)
Кількість Ціна
800+106.74 грн
1600+100.59 грн
Мінімальне замовлення: 800
В кошику  од. на суму  грн.
IRFSL4229PBF IRFSL4229PBF.pdf
IRFSL4229PBF
Виробник: Infineon Technologies
Description: MOSFET N-CH 250V 45A TO262
Packaging: Tube
Package / Case: TO-262-3 Long Leads, I2PAK, TO-262AA
Mounting Type: Through Hole
Operating Temperature: -40°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 45A (Tc)
Rds On (Max) @ Id, Vgs: 48mOhm @ 26A, 10V
Power Dissipation (Max): 330W (Tc)
Vgs(th) (Max) @ Id: 5V @ 250µA
Supplier Device Package: TO-262
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±30V
Drain to Source Voltage (Vdss): 250 V
Gate Charge (Qg) (Max) @ Vgs: 110 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 4560 pF @ 25 V
товару немає в наявності
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IRG6IC30U-110P Part_Number_Guide_Web.pdf
IRG6IC30U-110P
Виробник: Infineon Technologies
Description: IGBT 330V 28A 43W TO220ABFP
Packaging: Tube
Package / Case: TO-220-3 Full Pack
Mounting Type: Through Hole
Input Type: Standard
Vce(on) (Max) @ Vge, Ic: 2.38V @ 15V, 120A
Supplier Device Package: TO-220AB Full-Pak
IGBT Type: Trench
Current - Collector (Ic) (Max): 28 A
Voltage - Collector Emitter Breakdown (Max): 330 V
Power - Max: 43 W
товару немає в наявності
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IRG6IC30UPBF Part_Number_Guide_Web.pdf
IRG6IC30UPBF
Виробник: Infineon Technologies
Description: IGBT 600V 25A 37W TO220ABFP
Packaging: Tube
Package / Case: TO-220-3 Full Pack
Mounting Type: Through Hole
Operating Temperature: -40°C ~ 150°C (TJ)
Input Type: Standard
Vce(on) (Max) @ Vge, Ic: 2.88V @ 15V, 120A
Supplier Device Package: TO-220AB Full-Pak
IGBT Type: Trench
Td (on/off) @ 25°C: 20ns/160ns
Test Condition: 400V, 25A, 10Ohm
Gate Charge: 79 nC
Part Status: Obsolete
Current - Collector (Ic) (Max): 25 A
Voltage - Collector Emitter Breakdown (Max): 600 V
Power - Max: 37 W
товару немає в наявності
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IRG6S320UTRLPBF IRG6S320UPbF.pdf
IRG6S320UTRLPBF
Виробник: Infineon Technologies
Description: IGBT 330V 50A 114W D2PAK
товару немає в наявності
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IRG6S330UPBF Part_Number_Guide_Web.pdf
IRG6S330UPBF
Виробник: Infineon Technologies
Description: IGBT 330V 70A 160W D2PAK
Packaging: Tube
Package / Case: TO-263-3, D²Pak (2 Leads + Tab), TO-263AB
Mounting Type: Surface Mount
Operating Temperature: -40°C ~ 150°C (TJ)
Input Type: Standard
Vce(on) (Max) @ Vge, Ic: 2.1V @ 15V, 70A
Supplier Device Package: D2PAK
IGBT Type: Trench
Td (on/off) @ 25°C: 39ns/120ns
Test Condition: 196V, 25A, 10Ohm
Gate Charge: 86 nC
Part Status: Obsolete
Current - Collector (Ic) (Max): 70 A
Voltage - Collector Emitter Breakdown (Max): 330 V
Power - Max: 160 W
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IRG7PH30K10PBF IRG7PH30K10PBF.pdf
IRG7PH30K10PBF
Виробник: Infineon Technologies
Description: IGBT 1200V 33A 210W TO247AC
Packaging: Tube
Package / Case: TO-247-3
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 175°C (TJ)
Input Type: Standard
Vce(on) (Max) @ Vge, Ic: 2.35V @ 15V, 9A
Supplier Device Package: TO-247AC
IGBT Type: Trench
Td (on/off) @ 25°C: 14ns/110ns
Switching Energy: 530µJ (on), 380µJ (off)
Test Condition: 600V, 9A, 22Ohm, 15V
Gate Charge: 45 nC
Part Status: Obsolete
Current - Collector (Ic) (Max): 33 A
Voltage - Collector Emitter Breakdown (Max): 1200 V
Current - Collector Pulsed (Icm): 27 A
Power - Max: 210 W
товару немає в наявності
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IRG7PH35UDPBF irg7ph35udpbf.pdf?fileId=5546d462533600a40153564d601323ad
IRG7PH35UDPBF
Виробник: Infineon Technologies
Description: IGBT TRENCH 1200V 50A TO-247AC
Packaging: Tube
Package / Case: TO-247-3
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Input Type: Standard
Reverse Recovery Time (trr): 105 ns
Vce(on) (Max) @ Vge, Ic: 2.2V @ 15V, 20A
Supplier Device Package: TO-247AC
IGBT Type: Trench
Td (on/off) @ 25°C: 30ns/160ns
Switching Energy: 1.06mJ (on), 620µJ (off)
Test Condition: 600V, 20A, 10Ohm, 15V
Gate Charge: 85 nC
Part Status: Obsolete
Current - Collector (Ic) (Max): 50 A
Voltage - Collector Emitter Breakdown (Max): 1200 V
Current - Collector Pulsed (Icm): 60 A
Power - Max: 180 W
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IRG7PH42UD1PBF fundamentals-of-power-semiconductors
IRG7PH42UD1PBF
Виробник: Infineon Technologies
Description: IGBT TRENCH 1200V 85A TO-247AC
Packaging: Tube
Package / Case: TO-247-3
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Input Type: Standard
Vce(on) (Max) @ Vge, Ic: 2V @ 15V, 30A
Supplier Device Package: TO-247AC
IGBT Type: Trench
Td (on/off) @ 25°C: -/270ns
Switching Energy: 1.21mJ (off)
Test Condition: 600V, 30A, 10Ohm, 15V
Gate Charge: 180 nC
Part Status: Obsolete
Current - Collector (Ic) (Max): 85 A
Voltage - Collector Emitter Breakdown (Max): 1200 V
Current - Collector Pulsed (Icm): 200 A
Power - Max: 313 W
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IRG7PH46UDPBF fundamentals-of-power-semiconductors
IRG7PH46UDPBF
Виробник: Infineon Technologies
Description: IGBT TRENCH 1200V 40A TO-247AC
Packaging: Tube
Package / Case: TO-247-3
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Input Type: Standard
Reverse Recovery Time (trr): 140 ns
Vce(on) (Max) @ Vge, Ic: 2V @ 15V, 40A
Supplier Device Package: TO-247AC
IGBT Type: Trench
Td (on/off) @ 25°C: 45ns/410ns
Switching Energy: 2.61mJ (on), 1.85mJ (off)
Test Condition: 600V, 40A, 10Ohm, 15V
Gate Charge: 220 nC
Part Status: Obsolete
Current - Collector (Ic) (Max): 40 A
Voltage - Collector Emitter Breakdown (Max): 1200 V
Current - Collector Pulsed (Icm): 160 A
Power - Max: 390 W
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IRGB4086PBF IRGB(S)4086PbF.pdf
IRGB4086PBF
Виробник: Infineon Technologies
Description: IGBT 300V 70A 160W TO220AB
Packaging: Tube
Package / Case: TO-220-3
Mounting Type: Through Hole
Operating Temperature: -40°C ~ 150°C (TJ)
Input Type: Standard
Vce(on) (Max) @ Vge, Ic: 2.96V @ 15V, 120A
Supplier Device Package: TO-220AB
IGBT Type: Trench
Td (on/off) @ 25°C: 36ns/112ns
Test Condition: 196V, 25A, 10Ohm
Gate Charge: 65 nC
Current - Collector (Ic) (Max): 70 A
Voltage - Collector Emitter Breakdown (Max): 300 V
Power - Max: 160 W
товару немає в наявності
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IRGI4086PBF IRGI4086PbF.pdf
IRGI4086PBF
Виробник: Infineon Technologies
Description: IGBT TRENCH 300V 25A TO220AB FP
Packaging: Tube
Package / Case: TO-220-3 Full Pack
Mounting Type: Through Hole
Operating Temperature: -40°C ~ 150°C (TJ)
Input Type: Standard
Vce(on) (Max) @ Vge, Ic: 2.96V @ 15V, 120A
Supplier Device Package: TO-220AB Full-Pak
IGBT Type: Trench
Td (on/off) @ 25°C: 36ns/112ns
Test Condition: 196V, 25A, 10Ohm
Gate Charge: 65 nC
Current - Collector (Ic) (Max): 25 A
Voltage - Collector Emitter Breakdown (Max): 300 V
Power - Max: 43 W
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IRGP4063PBF IRSDS11858-1.pdf?t.download=true&u=5oefqw
IRGP4063PBF
Виробник: Infineon Technologies
Description: IGBT TRENCH 600V 96A TO-247AC
Packaging: Tube
Package / Case: TO-247-3
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 175°C (TJ)
Input Type: Standard
Vce(on) (Max) @ Vge, Ic: 2.14V @ 15V, 48A
Supplier Device Package: TO-247AC
IGBT Type: Trench
Td (on/off) @ 25°C: 60ns/145ns
Switching Energy: 625µJ (on), 1.28mJ (off)
Test Condition: 400V, 48A, 10Ohm, 15V
Gate Charge: 95 nC
Part Status: Obsolete
Current - Collector (Ic) (Max): 96 A
Voltage - Collector Emitter Breakdown (Max): 600 V
Current - Collector Pulsed (Icm): 144 A
Power - Max: 330 W
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IRGP50B60PD1-EP fundamentals-of-power-semiconductors
IRGP50B60PD1-EP
Виробник: Infineon Technologies
Description: IGBT NPT 600V 75A TO-247AD
Packaging: Tube
Package / Case: TO-3P-3 Full Pack
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Input Type: Standard
Reverse Recovery Time (trr): 42 ns
Vce(on) (Max) @ Vge, Ic: 2.85V @ 15V, 50A
Supplier Device Package: TO-247AD
IGBT Type: NPT
Td (on/off) @ 25°C: 30ns/130ns
Switching Energy: 255µJ (on), 375µJ (off)
Test Condition: 390V, 33A, 3.3Ohm, 15V
Gate Charge: 205 nC
Part Status: Obsolete
Current - Collector (Ic) (Max): 75 A
Voltage - Collector Emitter Breakdown (Max): 600 V
Current - Collector Pulsed (Icm): 150 A
Power - Max: 390 W
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IRGS4086PBF IRGB(S)4086PbF.pdf
IRGS4086PBF
Виробник: Infineon Technologies
Description: IGBT 300V 70A 160W D2PAK
товару немає в наявності
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IRLB3036GPBF IRLB3036GPbF.pdf
IRLB3036GPBF
Виробник: Infineon Technologies
Description: MOSFET N-CH 60V 195A TO220AB
Packaging: Tube
Package / Case: TO-220-3
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 195A (Tc)
Rds On (Max) @ Id, Vgs: 2.4mOhm @ 165A, 10V
Power Dissipation (Max): 380W (Tc)
Vgs(th) (Max) @ Id: 2.5V @ 250µA
Supplier Device Package: TO-220AB
Part Status: Obsolete
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±16V
Drain to Source Voltage (Vdss): 60 V
Gate Charge (Qg) (Max) @ Vgs: 140 nC @ 4.5 V
Input Capacitance (Ciss) (Max) @ Vds: 11210 pF @ 50 V
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IRLML0040TRPBF irlml0040pbf.pdf?fileId=5546d462533600a401535664894825e4
IRLML0040TRPBF
Виробник: Infineon Technologies
Description: MOSFET N-CH 40V 3.6A SOT23
Packaging: Tape & Reel (TR)
Package / Case: TO-236-3, SC-59, SOT-23-3
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 3.6A (Ta)
Rds On (Max) @ Id, Vgs: 56mOhm @ 3.6A, 10V
Power Dissipation (Max): 1.3W (Ta)
Vgs(th) (Max) @ Id: 2.5V @ 25µA
Supplier Device Package: Micro3™/SOT-23
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±16V
Drain to Source Voltage (Vdss): 40 V
Gate Charge (Qg) (Max) @ Vgs: 3.9 nC @ 4.5 V
Input Capacitance (Ciss) (Max) @ Vds: 266 pF @ 25 V
на замовлення 63000 шт:
термін постачання 21-31 дні (днів)
Кількість Ціна
3000+6.65 грн
6000+6.05 грн
9000+4.80 грн
15000+4.42 грн
Мінімальне замовлення: 3000
В кошику  од. на суму  грн.
IRLML2502GTRPBF irlml2502gpbf.pdf?fileId=5546d462533600a401535667fb882604
IRLML2502GTRPBF
Виробник: Infineon Technologies
Description: MOSFET N-CH 20V 4.2A SOT23
Packaging: Tape & Reel (TR)
Package / Case: TO-236-3, SC-59, SOT-23-3
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 4.2A (Ta)
Rds On (Max) @ Id, Vgs: 45mOhm @ 4.2A, 4.5V
Power Dissipation (Max): 1.25W (Ta)
Vgs(th) (Max) @ Id: 1.2V @ 250µA
Supplier Device Package: Micro3™/SOT-23
Part Status: Discontinued at Digi-Key
Drive Voltage (Max Rds On, Min Rds On): 2.5V, 4.5V
Vgs (Max): ±12V
Drain to Source Voltage (Vdss): 20 V
Gate Charge (Qg) (Max) @ Vgs: 12 nC @ 5 V
Input Capacitance (Ciss) (Max) @ Vds: 740 pF @ 15 V
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IRLML2803GTRPBF irlml2803gpbf.pdf?fileId=5546d462533600a4015356681f1b260d
IRLML2803GTRPBF
Виробник: Infineon Technologies
Description: MOSFET N-CH 30V 1.2A SOT-23-3
Packaging: Tape & Reel (TR)
Package / Case: TO-236-3, SC-59, SOT-23-3
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 1.2A (Ta)
Rds On (Max) @ Id, Vgs: 250mOhm @ 910mA, 10V
Power Dissipation (Max): 540mW (Ta)
Vgs(th) (Max) @ Id: 1V @ 250µA
Supplier Device Package: Micro3™/SOT-23
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 30 V
Gate Charge (Qg) (Max) @ Vgs: 5 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 85 pF @ 25 V
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IRLML5103GTRPBF irlml5103gpbf.pdf?fileId=5546d462533600a40153566844fd2615
IRLML5103GTRPBF
Виробник: Infineon Technologies
Description: MOSFET P-CH 30V 0.76A SOT-23-3
Packaging: Tape & Reel (TR)
Package / Case: TO-236-3, SC-59, SOT-23-3
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: P-Channel
Current - Continuous Drain (Id) @ 25°C: 760mA (Ta)
Rds On (Max) @ Id, Vgs: 600mOhm @ 600mA, 10V
Power Dissipation (Max): 540mW (Ta)
Vgs(th) (Max) @ Id: 1V @ 250µA
Supplier Device Package: Micro3™/SOT-23
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 30 V
Gate Charge (Qg) (Max) @ Vgs: 5.1 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 75 pF @ 25 V
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IRLML5203GTRPBF irlml5203gpbf.pdf?fileId=5546d462533600a40153566861dc261b
IRLML5203GTRPBF
Виробник: Infineon Technologies
Description: MOSFET P-CH 30V 3A SOT-23-3
Packaging: Tape & Reel (TR)
Package / Case: TO-236-3, SC-59, SOT-23-3
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: P-Channel
Current - Continuous Drain (Id) @ 25°C: 3A (Ta)
Rds On (Max) @ Id, Vgs: 98mOhm @ 3A, 10V
Power Dissipation (Max): 1.25W (Ta)
Vgs(th) (Max) @ Id: 2.5V @ 250µA
Supplier Device Package: Micro3™/SOT-23
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 30 V
Gate Charge (Qg) (Max) @ Vgs: 14 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 510 pF @ 25 V
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IRLML6402GTRPBF irlml6402gpbf.pdf?fileId=5546d462533600a401535668ccbf263a
IRLML6402GTRPBF
Виробник: Infineon Technologies
Description: MOSFET P-CH 20V 3.7A SOT23
Packaging: Tape & Reel (TR)
Package / Case: TO-236-3, SC-59, SOT-23-3
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: P-Channel
Current - Continuous Drain (Id) @ 25°C: 3.7A (Ta)
Rds On (Max) @ Id, Vgs: 65mOhm @ 3.7A, 4.5V
Power Dissipation (Max): 1.3W (Ta)
Vgs(th) (Max) @ Id: 1.2V @ 250µA
Supplier Device Package: Micro3™/SOT-23
Part Status: Discontinued at Digi-Key
Drive Voltage (Max Rds On, Min Rds On): 2.5V, 4.5V
Vgs (Max): ±12V
Drain to Source Voltage (Vdss): 20 V
Gate Charge (Qg) (Max) @ Vgs: 12 nC @ 5 V
Input Capacitance (Ciss) (Max) @ Vds: 633 pF @ 10 V
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IRLML9303TRPBF irlml9303pbf.pdf?fileId=5546d462533600a401535668ef1d2642
IRLML9303TRPBF
Виробник: Infineon Technologies
Description: MOSFET P-CH 30V 2.3A SOT23
Packaging: Tape & Reel (TR)
Package / Case: TO-236-3, SC-59, SOT-23-3
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: P-Channel
Current - Continuous Drain (Id) @ 25°C: 2.3A (Ta)
Rds On (Max) @ Id, Vgs: 165mOhm @ 2.3A, 10V
Power Dissipation (Max): 1.25W (Ta)
Vgs(th) (Max) @ Id: 2.4V @ 10µA
Supplier Device Package: Micro3™/SOT-23
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 30 V
Gate Charge (Qg) (Max) @ Vgs: 2 nC @ 4.5 V
Input Capacitance (Ciss) (Max) @ Vds: 160 pF @ 25 V
на замовлення 12000 шт:
термін постачання 21-31 дні (днів)
Кількість Ціна
3000+5.28 грн
6000+4.80 грн
9000+4.23 грн
Мінімальне замовлення: 3000
В кошику  од. на суму  грн.
IRLP3034PBF irlp3034pbf.pdf?fileId=5546d462533600a4015356693edf2656
IRLP3034PBF
Виробник: Infineon Technologies
Description: MOSFET N-CH 40V 195A TO247AC
Packaging: Tube
Package / Case: TO-247-3
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 195A (Tc)
Rds On (Max) @ Id, Vgs: 1.7mOhm @ 195A, 10V
Power Dissipation (Max): 341W (Tc)
Vgs(th) (Max) @ Id: 2.5V @ 250µA
Supplier Device Package: TO-247AC
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 40 V
Gate Charge (Qg) (Max) @ Vgs: 162 nC @ 4.5 V
Input Capacitance (Ciss) (Max) @ Vds: 10315 pF @ 25 V
на замовлення 171 шт:
термін постачання 21-31 дні (днів)
Кількість Ціна
1+370.91 грн
25+193.85 грн
100+171.19 грн
В кошику  од. на суму  грн.
IRLR024ZTRPBF IRLR024ZPbF%2C%20IRLU024ZPbF.pdf
IRLR024ZTRPBF
Виробник: Infineon Technologies
Description: MOSFET N-CH 55V 16A DPAK
Packaging: Tape & Reel (TR)
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 16A (Tc)
Rds On (Max) @ Id, Vgs: 58mOhm @ 9.6A, 10V
Power Dissipation (Max): 35W (Tc)
Vgs(th) (Max) @ Id: 3V @ 250µA
Supplier Device Package: TO-252AA (DPAK)
Part Status: Obsolete
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±16V
Drain to Source Voltage (Vdss): 55 V
Gate Charge (Qg) (Max) @ Vgs: 9.9 nC @ 5 V
Input Capacitance (Ciss) (Max) @ Vds: 380 pF @ 25 V
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IRLR8726TRPBF irlr8726pbf.pdf?fileId=5546d462533600a40153567181dd26f7
IRLR8726TRPBF
Виробник: Infineon Technologies
Description: MOSFET N-CH 30V 86A DPAK
Packaging: Tape & Reel (TR)
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 86A (Tc)
Rds On (Max) @ Id, Vgs: 5.8mOhm @ 25A, 10V
Power Dissipation (Max): 75W (Tc)
Vgs(th) (Max) @ Id: 2.35V @ 50µA
Supplier Device Package: TO-252AA (DPAK)
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 30 V
Gate Charge (Qg) (Max) @ Vgs: 23 nC @ 4.5 V
Input Capacitance (Ciss) (Max) @ Vds: 2150 pF @ 15 V
на замовлення 66000 шт:
термін постачання 21-31 дні (днів)
Кількість Ціна
2000+15.97 грн
4000+13.09 грн
6000+12.70 грн
10000+11.81 грн
14000+11.40 грн
20000+11.18 грн
Мінімальне замовлення: 2000
В кошику  од. на суму  грн.
IRLR8729TRPBF irlr8729pbf.pdf?fileId=5546d462533600a4015356718abb26fa
IRLR8729TRPBF
Виробник: Infineon Technologies
Description: MOSFET N-CH 30V 58A DPAK
Packaging: Tape & Reel (TR)
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 58A (Tc)
Rds On (Max) @ Id, Vgs: 8.9mOhm @ 25A, 10V
Power Dissipation (Max): 55W (Tc)
Vgs(th) (Max) @ Id: 2.35V @ 25µA
Supplier Device Package: TO-252AA (DPAK)
Part Status: Obsolete
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 30 V
Gate Charge (Qg) (Max) @ Vgs: 16 nC @ 4.5 V
Input Capacitance (Ciss) (Max) @ Vds: 1350 pF @ 15 V
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IRLU8726PBF description irlr8726pbf.pdf?fileId=5546d462533600a40153567181dd26f7
IRLU8726PBF
Виробник: Infineon Technologies
Description: MOSFET N-CH 30V 86A IPAK
Packaging: Tube
Package / Case: TO-251-3 Short Leads, IPak, TO-251AA
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 86A (Tc)
Rds On (Max) @ Id, Vgs: 5.8mOhm @ 25A, 10V
Power Dissipation (Max): 75W (Tc)
Vgs(th) (Max) @ Id: 2.35V @ 50µA
Supplier Device Package: IPAK
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 30 V
Gate Charge (Qg) (Max) @ Vgs: 23 nC @ 4.5 V
Input Capacitance (Ciss) (Max) @ Vds: 2150 pF @ 15 V
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IRPLHID2 irplhid2.pdf?fileId=5546d462533600a4015356a011722c87
IRPLHID2
Виробник: Infineon Technologies
Description: EVAL BOARD FOR IRS2573D
Packaging: Box
Function: Ballast Control
Type: Opto/Lighting
Contents: Board(s)
Utilized IC / Part: IRS2573D
Supplied Contents: Board(s)
Secondary Attributes: Short-Circuit Protection
Embedded: No
Part Status: Obsolete
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IRS210614SPBF fundamentals-of-power-semiconductors
IRS210614SPBF
Виробник: Infineon Technologies
Description: IC GATE DRVR HALF-BRIDGE 14SOIC
Packaging: Tube
Package / Case: 14-SOIC (0.154", 3.90mm Width)
Mounting Type: Surface Mount
Operating Temperature: -40°C ~ 150°C (TJ)
Voltage - Supply: 10V ~ 20V
Input Type: Non-Inverting
High Side Voltage - Max (Bootstrap): 600 V
Supplier Device Package: 14-SOIC
Rise / Fall Time (Typ): 100ns, 35ns
Channel Type: Independent
Driven Configuration: Half-Bridge
Number of Drivers: 2
Gate Type: IGBT, MOSFET (N-Channel)
Logic Voltage - VIL, VIH: 0.8V, 2.5V
Current - Peak Output (Source, Sink): 290mA, 600mA
DigiKey Programmable: Not Verified
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IRS21571DSPBF IRS21571D.pdf
IRS21571DSPBF
Виробник: Infineon Technologies
Description: IC BALLAST CNTRL 48.3KHZ 16SOIC
Packaging: Tube
Package / Case: 16-SOIC (0.154", 3.90mm Width)
Mounting Type: Surface Mount
Frequency: 43.7kHz ~ 48.3kHz
Type: Ballast Controller
Operating Temperature: -40°C ~ 125°C
Voltage - Supply: 11.5V ~ 15.6V
Supplier Device Package: 16-SOIC
Part Status: Obsolete
Current - Supply: 10 mA
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IRS21850SPBF fundamentals-of-power-semiconductors
IRS21850SPBF
Виробник: Infineon Technologies
Description: IC GATE DRVR HIGH-SIDE 8SOIC
Packaging: Tube
Package / Case: 8-SOIC (0.154", 3.90mm Width)
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Voltage - Supply: 10V ~ 20V
Input Type: Non-Inverting
High Side Voltage - Max (Bootstrap): 600 V
Supplier Device Package: 8-SOIC
Rise / Fall Time (Typ): 15ns, 15ns
Channel Type: Single
Driven Configuration: High-Side
Number of Drivers: 1
Gate Type: IGBT, N-Channel MOSFET
Logic Voltage - VIL, VIH: 0.8V, 2.5V
Current - Peak Output (Source, Sink): 4A, 4A
Part Status: Obsolete
DigiKey Programmable: Not Verified
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