Продукція > INFINEON TECHNOLOGIES > Всі товари виробника INFINEON TECHNOLOGIES (126755) > Сторінка 167 з 2113
| Фото | Назва | Виробник | Інформація | Доступність | Ціна без ПДВ | ||||||||||
|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|
| IRDC3822A | Infineon Technologies |
 Description: BOARD EVAL SYNC BUCK CONVERTER |
товару немає в наявності |
В кошику од. на суму грн. | |||||||||||
| IRDC3831 | Infineon Technologies |
Description: BOARD EVAL SYNC BUCK CONVERTER |
товару немає в наявності |
В кошику од. на суму грн. | |||||||||||
| IRDC3840 | Infineon Technologies |
Description: BOARD EVAL SYNC BUCK CONVERTER Packaging: Tube Voltage - Output: 1.8V Voltage - Input: 12V Current - Output: 12A Frequency - Switching: 600kHz Regulator Topology: Buck Board Type: Fully Populated Utilized IC / Part: IR3840 Supplied Contents: Board(s) Main Purpose: DC/DC, Step Down Outputs and Type: 1, Non-Isolated |
товару немає в наявності |
В кошику од. на суму грн. | |||||||||||
| IRDC3841 | Infineon Technologies |
Description: BOARD EVAL SYNC BUCK CONVERTER Packaging: Tube Voltage - Output: 1.8V Voltage - Input: 12V Current - Output: 8A Frequency - Switching: 600kHz Regulator Topology: Buck Board Type: Fully Populated Utilized IC / Part: IR3841 Supplied Contents: Board(s) Main Purpose: DC/DC, Step Down Outputs and Type: 1, Non-Isolated |
товару немає в наявності |
В кошику од. на суму грн. | |||||||||||
| IRDC3842 | Infineon Technologies |
Description: BOARD EVAL SYNC BUCK CONVERTER |
товару немає в наявності |
В кошику од. на суму грн. | |||||||||||
| IRDC3870 | Infineon Technologies |
Description: BOARD EVAL REG SUPIRBUCK DC/DC Packaging: Box Voltage - Output: 1.1V Voltage - Input: 8V ~ 19V Current - Output: 10A Frequency - Switching: 500kHz Regulator Topology: Buck Board Type: Fully Populated Utilized IC / Part: IR3870 Supplied Contents: Board(s) Main Purpose: DC/DC, Step Down Outputs and Type: 1, Non-Isolated |
товару немає в наявності |
В кошику од. на суму грн. | |||||||||||
| IRDCIP1206-A | Infineon Technologies |
Description: EVAL BOARD FOR IP1206 |
товару немає в наявності |
В кошику од. на суму грн. | |||||||||||
| IRDCIP1206-B | Infineon Technologies |
Description: EVAL BOARD FOR IP1206 |
товару немає в наявності |
В кошику од. на суму грн. | |||||||||||
| IRDCIP2005C-2 | Infineon Technologies |
Description: EVAL BOARD FOR IP2005C Packaging: Box Voltage - Output: 1.5V, 2.5V Voltage - Input: 8.5V ~ 14.5V Current - Output: 30A, 30A Frequency - Switching: 500kHz Regulator Topology: Buck Board Type: Fully Populated Utilized IC / Part: iP2005C Supplied Contents: Board(s) Main Purpose: DC/DC, Step Down Outputs and Type: 2, Non-Isolated Part Status: Obsolete |
товару немає в наявності |
В кошику од. на суму грн. | |||||||||||
 |
IRF1405ZL-7PPBF | Infineon Technologies |
Description: MOSFET N-CH 55V 120A TO263CA-7 Packaging: Tube Package / Case: TO-263-7 (Straight Leads) Mounting Type: Through Hole Operating Temperature: -55°C ~ 175°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 120A (Tc) Rds On (Max) @ Id, Vgs: 4.9mOhm @ 88A, 10V Power Dissipation (Max): 230W (Tc) Vgs(th) (Max) @ Id: 4V @ 150µA Supplier Device Package: TO-263CA-7 Part Status: Obsolete Drive Voltage (Max Rds On, Min Rds On): 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 55 V Gate Charge (Qg) (Max) @ Vgs: 230 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 5360 pF @ 25 V |
товару немає в наявності |
Мінімальне замовлення: 200 шт В кошику од. на суму грн. | ||||||||||
 |
IRF6614TR1 | Infineon Technologies |
Description: MOSFET N-CH 40V 12.7A DIRECTFET |
товару немає в наявності |
Мінімальне замовлення: 1000 шт В кошику од. на суму грн. | ||||||||||
 |
IRF6644 | Infineon Technologies |
Description: MOSFET N-CH 100V 10.3A DIRECTFET Packaging: Tube Package / Case: DirectFET™ Isometric MN Mounting Type: Surface Mount Operating Temperature: -40°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 10.3A (Ta), 60A (Tc) Rds On (Max) @ Id, Vgs: 13mOhm @ 10.3A, 10V Power Dissipation (Max): 2.8W (Ta), 89W (Tc) Vgs(th) (Max) @ Id: 4.8V @ 150µA Supplier Device Package: DIRECTFET™ MN Drive Voltage (Max Rds On, Min Rds On): 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 100 V Gate Charge (Qg) (Max) @ Vgs: 47 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 2210 pF @ 25 V |
товару немає в наявності |
Мінімальне замовлення: 4800 шт В кошику од. на суму грн. | ||||||||||
|
|
IRF6644TR1 | Infineon Technologies |
Description: MOSFET N-CH 100V 10.3A DIRECTFET Packaging: Tape & Reel (TR) Package / Case: DirectFET™ Isometric MN Mounting Type: Surface Mount Operating Temperature: -40°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 10.3A (Ta), 60A (Tc) Rds On (Max) @ Id, Vgs: 13mOhm @ 10.3A, 10V Power Dissipation (Max): 2.8W (Ta), 89W (Tc) Vgs(th) (Max) @ Id: 4.8V @ 150µA Supplier Device Package: DIRECTFET™ MN Drive Voltage (Max Rds On, Min Rds On): 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 100 V Gate Charge (Qg) (Max) @ Vgs: 47 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 2210 pF @ 25 V |
товару немає в наявності |
Мінімальне замовлення: 1000 шт В кошику од. на суму грн. | ||||||||||
|
|
IRF6645 | Infineon Technologies |
Description: MOSFET N-CH 100V 5.7A DIRECTFET Packaging: Tube Package / Case: DirectFET™ Isometric SJ Mounting Type: Surface Mount Operating Temperature: -40°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 5.7A (Ta), 25A (Tc) Rds On (Max) @ Id, Vgs: 35mOhm @ 5.7A, 10V Power Dissipation (Max): 3W (Ta), 42W (Tc) Vgs(th) (Max) @ Id: 4.9V @ 50µA Supplier Device Package: DIRECTFET™ SJ Part Status: Obsolete Drive Voltage (Max Rds On, Min Rds On): 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 100 V Gate Charge (Qg) (Max) @ Vgs: 20 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 890 pF @ 25 V |
товару немає в наявності |
Мінімальне замовлення: 4800 шт В кошику од. на суму грн. | ||||||||||
 |
IRF6655TR1 | Infineon Technologies |
Description: MOSFET N-CH 100V 4.2A DIRECTFET Packaging: Tape & Reel (TR) Package / Case: DirectFET™ Isometric SH Mounting Type: Surface Mount Operating Temperature: -40°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 4.2A (Ta), 19A (Tc) Rds On (Max) @ Id, Vgs: 62mOhm @ 5A, 10V Power Dissipation (Max): 2.2W (Ta), 42W (Tc) Vgs(th) (Max) @ Id: 4.8V @ 25µA Supplier Device Package: DIRECTFET™ SH Drive Voltage (Max Rds On, Min Rds On): 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 100 V Gate Charge (Qg) (Max) @ Vgs: 11.7 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 530 pF @ 25 V |
товару немає в наявності |
Мінімальне замовлення: 1000 шт В кошику од. на суму грн. | ||||||||||
|
|
IRF6665 | Infineon Technologies |
Description: MOSFET N-CH 100V 4.2A DIRECTFET Packaging: Tube Package / Case: DirectFET™ Isometric SH Mounting Type: Surface Mount Operating Temperature: -40°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 4.2A (Ta), 19A (Tc) Rds On (Max) @ Id, Vgs: 62mOhm @ 5A, 10V Power Dissipation (Max): 2.2W (Ta), 42W (Tc) Vgs(th) (Max) @ Id: 5V @ 250µA Supplier Device Package: DIRECTFET™ SH Drive Voltage (Max Rds On, Min Rds On): 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 100 V Gate Charge (Qg) (Max) @ Vgs: 13 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 530 pF @ 25 V |
товару немає в наявності |
Мінімальне замовлення: 4800 шт В кошику од. на суму грн. | ||||||||||
|
|
IRF6665TR1 | Infineon Technologies |
Description: MOSFET N-CH 100V 4.2A DIRECTFET Packaging: Tape & Reel (TR) Package / Case: DirectFET™ Isometric SH Mounting Type: Surface Mount Operating Temperature: -40°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 4.2A (Ta), 19A (Tc) Rds On (Max) @ Id, Vgs: 62mOhm @ 5A, 10V Power Dissipation (Max): 2.2W (Ta), 42W (Tc) Vgs(th) (Max) @ Id: 5V @ 250µA Supplier Device Package: DIRECTFET™ SH Drive Voltage (Max Rds On, Min Rds On): 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 100 V Gate Charge (Qg) (Max) @ Vgs: 13 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 530 pF @ 25 V |
товару немає в наявності |
Мінімальне замовлення: 1000 шт В кошику од. на суму грн. | ||||||||||
|
|
IRF6668TR1 | Infineon Technologies |
Description: MOSFET N-CH 80V 55A DIRECTFET MZ Packaging: Tape & Reel (TR) Package / Case: DirectFET™ Isometric MZ Mounting Type: Surface Mount Operating Temperature: -40°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 55A (Tc) Rds On (Max) @ Id, Vgs: 15mOhm @ 12A, 10V Power Dissipation (Max): 2.8W (Ta), 89W (Tc) Vgs(th) (Max) @ Id: 4.9V @ 100µA Supplier Device Package: DIRECTFET™ MZ Drive Voltage (Max Rds On, Min Rds On): 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 80 V Gate Charge (Qg) (Max) @ Vgs: 31 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 1320 pF @ 25 V |
товару немає в наявності |
Мінімальне замовлення: 1000 шт В кошику од. на суму грн. | ||||||||||
|
|
IRF6709S2TRPBF | Infineon Technologies |
Description: MOSFET N-CH 25V 12A DIRECTFET Packaging: Tape & Reel (TR) Package / Case: DirectFET™ Isometric S1 Mounting Type: Surface Mount Operating Temperature: -55°C ~ 175°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 12A (Ta), 39A (Tc) Rds On (Max) @ Id, Vgs: 7.8mOhm @ 12A, 10V Power Dissipation (Max): 1.8W (Ta), 21W (Tc) Vgs(th) (Max) @ Id: 2.35V @ 25µA Supplier Device Package: DirectFET™ Isometric S1 Part Status: Obsolete Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 25 V Gate Charge (Qg) (Max) @ Vgs: 12 nC @ 4.5 V Input Capacitance (Ciss) (Max) @ Vds: 1010 pF @ 13 V |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||||
 |
IRF6720S2TRPBF | Infineon Technologies |
Description: MOSFET N-CH 30V 11A DIRECTFET |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||||
 |
IRF6723M2DTRPBF | Infineon Technologies |
Description: MOSFET 2N-CH 30V 15A DIRECTFET |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||||
 |
62-0203PBF | Infineon Technologies |
Description: MOSFET P-CH 12V 16A 8SO Packaging: Tube Package / Case: 8-SOIC (0.154", 3.90mm Width) Mounting Type: Surface Mount Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: P-Channel Current - Continuous Drain (Id) @ 25°C: 16A (Ta) Rds On (Max) @ Id, Vgs: 7mOhm @ 16A, 4.5V Power Dissipation (Max): 2.5W (Ta) Vgs(th) (Max) @ Id: 900mV @ 250µA Supplier Device Package: 8-SO Part Status: Obsolete Drive Voltage (Max Rds On, Min Rds On): 1.8V, 4.5V Vgs (Max): ±8V Drain to Source Voltage (Vdss): 12 V Gate Charge (Qg) (Max) @ Vgs: 91 nC @ 4.5 V Input Capacitance (Ciss) (Max) @ Vds: 8676 pF @ 10 V |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||||
|
|
IRF8113GPBF | Infineon Technologies |
Description: MOSFET N-CH 30V 17.2A 8SO Packaging: Tube Package / Case: 8-SOIC (0.154", 3.90mm Width) Mounting Type: Surface Mount Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 17.2A (Ta) Rds On (Max) @ Id, Vgs: 5.6mOhm @ 17.2A, 10V Power Dissipation (Max): 2.5W (Ta) Vgs(th) (Max) @ Id: 2.2V @ 250µA Supplier Device Package: 8-SO Part Status: Obsolete Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 30 V Gate Charge (Qg) (Max) @ Vgs: 36 nC @ 4.5 V Input Capacitance (Ciss) (Max) @ Vds: 2910 pF @ 15 V |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||||
|
|
IRF8252PBF | Infineon Technologies |
 Description: MOSFET N-CH 25V 25A 8SOPackaging: Tube Package / Case: 8-SOIC (0.154", 3.90mm Width) Mounting Type: Surface Mount Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 25A (Ta) Rds On (Max) @ Id, Vgs: 2.7mOhm @ 25A, 10V Power Dissipation (Max): 2.5W (Ta) Vgs(th) (Max) @ Id: 2.35V @ 100µA Supplier Device Package: 8-SO Part Status: Obsolete Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 25 V Gate Charge (Qg) (Max) @ Vgs: 53 nC @ 4.5 V Input Capacitance (Ciss) (Max) @ Vds: 5305 pF @ 13 V |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||||
|
|
IRF8788PBF | Infineon Technologies |
Description: MOSFET N-CH 30V 24A 8SO Packaging: Tube Package / Case: 8-SOIC (0.154", 3.90mm Width) Mounting Type: Surface Mount Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 24A (Ta) Rds On (Max) @ Id, Vgs: 2.8mOhm @ 24A, 10V Power Dissipation (Max): 2.5W (Ta) Vgs(th) (Max) @ Id: 2.35V @ 100µA Supplier Device Package: 8-SO Part Status: Discontinued at Digi-Key Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 30 V Gate Charge (Qg) (Max) @ Vgs: 66 nC @ 4.5 V Input Capacitance (Ciss) (Max) @ Vds: 5720 pF @ 15 V |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||||
|
|
IRF8910GPBF | Infineon Technologies |
Description: MOSFET 2N-CH 20V 10A 8SO Packaging: Tube Package / Case: 8-SOIC (0.154", 3.90mm Width) Mounting Type: Surface Mount Configuration: 2 N-Channel (Dual) Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) Power - Max: 2W Drain to Source Voltage (Vdss): 20V Current - Continuous Drain (Id) @ 25°C: 10A Input Capacitance (Ciss) (Max) @ Vds: 960pF @ 10V Rds On (Max) @ Id, Vgs: 13.4mOhm @ 10A, 10V Gate Charge (Qg) (Max) @ Vgs: 11nC @ 4.5V FET Feature: Logic Level Gate Vgs(th) (Max) @ Id: 2.55V @ 250µA Supplier Device Package: 8-SO Part Status: Obsolete |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||||
 |
IRFH7911TRPBF | Infineon Technologies |
Description: MOSFET 2N-CH 30V 13A/28A PQFN Packaging: Tape & Reel (TR) Package / Case: 18-PowerVQFN Mounting Type: Surface Mount Configuration: 2 N-Channel (Dual) Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) Power - Max: 2.4W, 3.4W Drain to Source Voltage (Vdss): 30V Current - Continuous Drain (Id) @ 25°C: 13A, 28A Input Capacitance (Ciss) (Max) @ Vds: 1060pF @ 15V Rds On (Max) @ Id, Vgs: 8.6mOhm @ 12A, 10V Gate Charge (Qg) (Max) @ Vgs: 12nC @ 4.5V FET Feature: Logic Level Gate Vgs(th) (Max) @ Id: 2.35V @ 25µA Supplier Device Package: PQFN (5x6) |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||||
 |
IRFR1018ETRRPBF | Infineon Technologies |
Description: MOSFET N-CH 60V 56A DPAK Packaging: Tape & Reel (TR) Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63 Mounting Type: Surface Mount Operating Temperature: -55°C ~ 175°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 56A (Tc) Rds On (Max) @ Id, Vgs: 8.4mOhm @ 47A, 10V Power Dissipation (Max): 110W (Tc) Vgs(th) (Max) @ Id: 4V @ 100µA Supplier Device Package: TO-252AA (DPAK) Drive Voltage (Max Rds On, Min Rds On): 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 60 V Gate Charge (Qg) (Max) @ Vgs: 69 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 2290 pF @ 50 V |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||||
 |
IRFR3410TRRPBF | Infineon Technologies |
Description: MOSFET N-CH 100V 31A DPAK Packaging: Tape & Reel (TR) Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63 Mounting Type: Surface Mount Operating Temperature: -55°C ~ 175°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 31A (Tc) Rds On (Max) @ Id, Vgs: 39mOhm @ 18A, 10V Power Dissipation (Max): 3W (Ta), 110W (Tc) Vgs(th) (Max) @ Id: 4V @ 250µA Supplier Device Package: TO-252AA (DPAK) Part Status: Obsolete Drive Voltage (Max Rds On, Min Rds On): 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 100 V Gate Charge (Qg) (Max) @ Vgs: 56 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 1690 pF @ 25 V |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||||
 |
IRFS4229TRLPBF | Infineon Technologies |
Description: MOSFET N-CH 250V 45A D2PAK Packaging: Tape & Reel (TR) Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB Mounting Type: Surface Mount Operating Temperature: -40°C ~ 175°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 45A (Tc) Rds On (Max) @ Id, Vgs: 48mOhm @ 26A, 10V Power Dissipation (Max): 330W (Tc) Vgs(th) (Max) @ Id: 5V @ 250µA Supplier Device Package: PG-TO263-3 Part Status: Active Drive Voltage (Max Rds On, Min Rds On): 10V Vgs (Max): ±30V Drain to Source Voltage (Vdss): 250 V Gate Charge (Qg) (Max) @ Vgs: 110 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 4560 pF @ 25 V |
на замовлення 800 шт: термін постачання 21-31 дні (днів) |
|
||||||||||
|
|
IRLR8726PBF | Infineon Technologies |
Description: MOSFET N-CH 30V 86A DPAK Packaging: Tube Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63 Mounting Type: Surface Mount Operating Temperature: -55°C ~ 175°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 86A (Tc) Rds On (Max) @ Id, Vgs: 5.8mOhm @ 25A, 10V Power Dissipation (Max): 75W (Tc) Vgs(th) (Max) @ Id: 2.35V @ 50µA Supplier Device Package: TO-252AA (DPAK) Part Status: Discontinued at Digi-Key Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 30 V Gate Charge (Qg) (Max) @ Vgs: 23 nC @ 4.5 V Input Capacitance (Ciss) (Max) @ Vds: 2150 pF @ 15 V |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||||
|
|
IRLR8726TRLPBF | Infineon Technologies |
Description: MOSFET N-CH 30V 86A DPAK Packaging: Tape & Reel (TR) Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63 Mounting Type: Surface Mount Operating Temperature: -55°C ~ 175°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 86A (Tc) Rds On (Max) @ Id, Vgs: 5.8mOhm @ 25A, 10V Power Dissipation (Max): 75W (Tc) Vgs(th) (Max) @ Id: 2.35V @ 50µA Supplier Device Package: TO-252AA (DPAK) Part Status: Not For New Designs Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 30 V Gate Charge (Qg) (Max) @ Vgs: 23 nC @ 4.5 V Input Capacitance (Ciss) (Max) @ Vds: 2150 pF @ 15 V |
товару немає в наявності |
Мінімальне замовлення: 3000 шт В кошику од. на суму грн. | ||||||||||
|
|
IRLR8729PBF | Infineon Technologies |
Description: MOSFET N-CH 30V 58A D-PAK Packaging: Tube Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63 Mounting Type: Surface Mount Operating Temperature: -55°C ~ 175°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 58A (Tc) Rds On (Max) @ Id, Vgs: 8.9mOhm @ 25A, 10V Power Dissipation (Max): 55W (Tc) Vgs(th) (Max) @ Id: 2.35V @ 25µA Supplier Device Package: TO-252AA (DPAK) Part Status: Discontinued at Digi-Key Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 30 V Gate Charge (Qg) (Max) @ Vgs: 16 nC @ 4.5 V Input Capacitance (Ciss) (Max) @ Vds: 1350 pF @ 15 V |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||||
|
|
IRLR8729TRLPBF | Infineon Technologies |
Description: MOSFET N-CH 30V 58A D-PAK Packaging: Tape & Reel (TR) Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63 Mounting Type: Surface Mount Operating Temperature: -55°C ~ 175°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 58A (Tc) Rds On (Max) @ Id, Vgs: 8.9mOhm @ 25A, 10V Power Dissipation (Max): 55W (Tc) Vgs(th) (Max) @ Id: 2.35V @ 25µA Supplier Device Package: TO-252AA (DPAK) Part Status: Obsolete Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 30 V Gate Charge (Qg) (Max) @ Vgs: 16 nC @ 4.5 V Input Capacitance (Ciss) (Max) @ Vds: 1350 pF @ 15 V |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||||
 |
IRLS3036TRRPBF | Infineon Technologies |
Description: MOSFET N-CH 60V 195A D2PAK Packaging: Tape & Reel (TR) Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB Mounting Type: Surface Mount Operating Temperature: -55°C ~ 175°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 195A (Tc) Rds On (Max) @ Id, Vgs: 2.4mOhm @ 165A, 10V Power Dissipation (Max): 380W (Tc) Vgs(th) (Max) @ Id: 2.5V @ 250µA Supplier Device Package: D2PAK Part Status: Obsolete Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Vgs (Max): ±16V Drain to Source Voltage (Vdss): 60 V Gate Charge (Qg) (Max) @ Vgs: 140 nC @ 4.5 V Input Capacitance (Ciss) (Max) @ Vds: 11210 pF @ 50 V |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||||
 |
IRLU8256PBF | Infineon Technologies |
Description: MOSFET N-CH 25V 81A IPAK Packaging: Tube Package / Case: TO-251-3 Short Leads, IPak, TO-251AA Mounting Type: Through Hole Operating Temperature: -55°C ~ 175°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 81A (Tc) Rds On (Max) @ Id, Vgs: 5.7mOhm @ 25A, 10V Power Dissipation (Max): 63W (Tc) Vgs(th) (Max) @ Id: 2.35V @ 25µA Supplier Device Package: IPAK Part Status: Obsolete Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 25 V Gate Charge (Qg) (Max) @ Vgs: 15 nC @ 4.5 V Input Capacitance (Ciss) (Max) @ Vds: 1470 pF @ 13 V |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||||
|
|
IRLU8259PBF | Infineon Technologies |
Description: MOSFET N-CH 25V 57A IPAK Packaging: Tube Package / Case: TO-251-3 Short Leads, IPak, TO-251AA Mounting Type: Through Hole Operating Temperature: -55°C ~ 175°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 57A (Tc) Rds On (Max) @ Id, Vgs: 8.7mOhm @ 21A, 10V Power Dissipation (Max): 48W (Tc) Vgs(th) (Max) @ Id: 2.35V @ 25µA Supplier Device Package: IPAK Part Status: Obsolete Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 25 V Gate Charge (Qg) (Max) @ Vgs: 10 nC @ 4.5 V Input Capacitance (Ciss) (Max) @ Vds: 900 pF @ 13 V Voltage Coupled to Gate Charge (Qg) (Max) @ Vgs: 4.5 Voltage Coupled to Input Capacitance (Ciss) (Max) @ Vds: 13 |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||||
 |
IRMCF343TY | Infineon Technologies |
Description: IC MOTOR DRIVER 64MQFP |
товару немає в наявності |
Мінімальне замовлення: 1600 шт В кошику од. на суму грн. | ||||||||||
 |
IRMCF371TY | Infineon Technologies |
Description: IC MTRDRV 1.62-1.98/3-3.6V 48QFP Interface: I²C, RS-232, SPI Function: Controller - Commutation, Direction Management Mounting Type: Surface Mount Package / Case: 48-LQFP Packaging: Tray Motor Type - AC, DC: AC, Synchronous Supplier Device Package: 48-QFP (7x7) Technology: IGBT Applications: Appliance Voltage - Supply: 1.62V ~ 1.98V, 3V ~ 3.6V Output Configuration: Pre-Driver - Half Bridge (3) Operating Temperature: -40°C ~ 85°C (TA) |
товару немає в наявності |
Мінімальне замовлення: 1500 шт В кошику од. на суму грн. | ||||||||||
|
|
IRMCK371TY | Infineon Technologies |
Description: IC MTRDRV 1.62-1.98/3-3.6V 48QFP Motor Type - AC, DC: AC, Synchronous Supplier Device Package: 48-QFP (7x7) Technology: IGBT Applications: Appliance Voltage - Supply: 1.62V ~ 1.98V, 3V ~ 3.6V Output Configuration: Pre-Driver - Half Bridge (3) Operating Temperature: -40°C ~ 85°C (TA) Interface: I2C, RS-232, SPI Function: Controller - Commutation, Direction Management Mounting Type: Surface Mount Package / Case: 48-LQFP Packaging: Tray |
товару немає в наявності |
Мінімальне замовлення: 1500 шт В кошику од. на суму грн. | ||||||||||
| IRPP3637-06A | Infineon Technologies |
Description: BOARD REF DESIGN POWIR+ Part Status: Obsolete Outputs and Type: 1, Non-Isolated Main Purpose: DC/DC, Step Down Supplied Contents: Board(s) Utilized IC / Part: IR3637, IRF8910 Board Type: Fully Populated Regulator Topology: Buck Frequency - Switching: 600kHz Current - Output: 6A Voltage - Input: 4.5V ~ 5.5V Voltage - Output: 1.25V Packaging: Tube |
товару немає в наявності |
В кошику од. на суму грн. | |||||||||||
 |
IRS2093MTRPBF | Infineon Technologies |
Description: IC AUDIO AMP D PG-VQFN-48 Packaging: Tape & Reel (TR) Part Status: Active Supplier Device Package: PG-VQFN-48 Voltage - Supply: 10V ~ 15V Operating Temperature: -40°C ~ 125°C (TA) Type: Class D Mounting Type: Surface Mount Output Type: 4-Channel (Quad) Package / Case: 48-VFQFN Exposed Pad Features: Depop, Short-Circuit Protection, Shutdown |
товару немає в наявності |
Мінімальне замовлення: 3000 шт В кошику од. на суму грн. | ||||||||||
 |
IRS210614STRPBF | Infineon Technologies |
Description: IC GATE DRVR HALF-BRIDGE 14SOIC Packaging: Tape & Reel (TR) Package / Case: 14-SOIC (0.154", 3.90mm Width) Mounting Type: Surface Mount Operating Temperature: -40°C ~ 150°C (TJ) Voltage - Supply: 10V ~ 20V Input Type: Non-Inverting High Side Voltage - Max (Bootstrap): 600 V Supplier Device Package: 14-SOIC Rise / Fall Time (Typ): 100ns, 35ns Channel Type: Independent Driven Configuration: Half-Bridge Number of Drivers: 2 Gate Type: IGBT, MOSFET (N-Channel) Logic Voltage - VIL, VIH: 0.8V, 2.5V Current - Peak Output (Source, Sink): 290mA, 600mA DigiKey Programmable: Not Verified |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||||
|
|
IRS2123SPBF | Infineon Technologies |
Description: IC GATE DRVR HIGH-SIDE 8SOIC Packaging: Tube Package / Case: 8-SOIC (0.154", 3.90mm Width) Mounting Type: Surface Mount Operating Temperature: -40°C ~ 150°C (TJ) Voltage - Supply: 10V ~ 20V Input Type: Non-Inverting High Side Voltage - Max (Bootstrap): 600 V Supplier Device Package: 8-SOIC Rise / Fall Time (Typ): 80ns, 80ns Channel Type: Single Driven Configuration: High-Side Number of Drivers: 1 Gate Type: IGBT, N-Channel MOSFET Current - Peak Output (Source, Sink): 500mA, 500mA Part Status: Obsolete DigiKey Programmable: Not Verified |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||||
 |
IRS21571DSTRPBF | Infineon Technologies |
Description: IC BALLAST CNTRL 48.3KHZ 16SOIC Packaging: Tape & Reel (TR) Package / Case: 16-SOIC (0.154", 3.90mm Width) Mounting Type: Surface Mount Frequency: 43.7kHz ~ 48.3kHz Type: Ballast Controller Operating Temperature: -40°C ~ 125°C Voltage - Supply: 11.5V ~ 15.6V Supplier Device Package: 16-SOIC Current - Supply: 10 mA |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||||
 |
IRS21850STRPBF | Infineon Technologies |
Description: IC GATE DRVR HIGH-SIDE 8SOIC Packaging: Tape & Reel (TR) Package / Case: 8-SOIC (0.154", 3.90mm Width) Mounting Type: Surface Mount Operating Temperature: -55°C ~ 150°C (TJ) Voltage - Supply: 10V ~ 20V Input Type: Non-Inverting High Side Voltage - Max (Bootstrap): 600 V Supplier Device Package: 8-SOIC Rise / Fall Time (Typ): 15ns, 15ns Channel Type: Single Driven Configuration: High-Side Number of Drivers: 1 Gate Type: IGBT, MOSFET (N-Channel) Logic Voltage - VIL, VIH: 0.8V, 2.5V Current - Peak Output (Source, Sink): 4A, 4A Part Status: Obsolete DigiKey Programmable: Not Verified |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||||
|
|
IRS21856STRPBF | Infineon Technologies |
Description: IC GATE DRVR HALF-BRIDGE 14SOIC Packaging: Tape & Reel (TR) Package / Case: 14-SOIC (0.154", 3.90mm Width) Mounting Type: Surface Mount Operating Temperature: -55°C ~ 150°C (TJ) Voltage - Supply: 10V ~ 20V Input Type: Non-Inverting High Side Voltage - Max (Bootstrap): 600 V Supplier Device Package: 14-SOIC Rise / Fall Time (Typ): 30ns, 20ns Channel Type: Independent Driven Configuration: Half-Bridge Number of Drivers: 2 Gate Type: IGBT, MOSFET (N-Channel) Logic Voltage - VIL, VIH: 0.8V, 3.5V Current - Peak Output (Source, Sink): 500mA, 500mA DigiKey Programmable: Not Verified |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||||
 |
IRS21858STRPBF | Infineon Technologies |
Description: IC GATE DRVR HIGH-SIDE 16SOIC Packaging: Tape & Reel (TR) Package / Case: 16-SOIC (0.154", 3.90mm Width) Mounting Type: Surface Mount Operating Temperature: -55°C ~ 150°C (TJ) Voltage - Supply: 10V ~ 20V Input Type: Non-Inverting High Side Voltage - Max (Bootstrap): 600 V Supplier Device Package: 16-SOIC Rise / Fall Time (Typ): 60ns, 20ns Channel Type: Independent Driven Configuration: High-Side Number of Drivers: 2 Gate Type: IGBT, N-Channel MOSFET Logic Voltage - VIL, VIH: 0.8V, 3.5V Current - Peak Output (Source, Sink): 290mA, 600mA DigiKey Programmable: Not Verified |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||||
 |
IRS21956STRPBF | Infineon Technologies |
Description: IC GATE DRVR HALF-BRIDGE 20SOIC Packaging: Tape & Reel (TR) Package / Case: 20-SOIC (0.295", 7.50mm Width) Mounting Type: Surface Mount Operating Temperature: -55°C ~ 150°C (TJ) Voltage - Supply: 10V ~ 20V Input Type: Non-Inverting High Side Voltage - Max (Bootstrap): 600 V Supplier Device Package: 20-SOIC Rise / Fall Time (Typ): 25ns, 15ns Channel Type: Independent Driven Configuration: Half-Bridge Number of Drivers: 2 Gate Type: IGBT, N-Channel MOSFET Logic Voltage - VIL, VIH: 0.8V, 3.5V Current - Peak Output (Source, Sink): 500mA, 500mA DigiKey Programmable: Not Verified |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||||
|
|
IRS21962STRPBF | Infineon Technologies |
Description: IC GATE DRVR HIGH-SIDE 16SOIC Packaging: Tape & Reel (TR) Package / Case: 16-SOIC (0.154", 3.90mm Width) Mounting Type: Surface Mount Operating Temperature: -55°C ~ 150°C (TJ) Voltage - Supply: 10V ~ 20V Input Type: Non-Inverting High Side Voltage - Max (Bootstrap): 600 V Supplier Device Package: 16-SOIC Rise / Fall Time (Typ): 25ns, 25ns Channel Type: Independent Driven Configuration: High-Side Number of Drivers: 2 Gate Type: IGBT, N-Channel MOSFET Logic Voltage - VIL, VIH: 0.6V, 3.5V Current - Peak Output (Source, Sink): 500mA, 500mA DigiKey Programmable: Not Verified |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||||
 |
IRS2330STRPBF | Infineon Technologies |
Description: IC GATE DRVR HALF-BRIDGE 28SOIC Packaging: Tape & Reel (TR) Package / Case: 28-SOIC (0.295", 7.50mm Width) Mounting Type: Surface Mount Operating Temperature: -40°C ~ 150°C (TJ) Voltage - Supply: 10V ~ 20V Input Type: Inverting High Side Voltage - Max (Bootstrap): 600 V Supplier Device Package: 28-SOIC Rise / Fall Time (Typ): 80ns, 35ns Channel Type: 3-Phase Driven Configuration: Half-Bridge Number of Drivers: 6 Gate Type: IGBT, MOSFET (N-Channel) Logic Voltage - VIL, VIH: 0.8V, 2.2V Current - Peak Output (Source, Sink): 250mA, 500mA Part Status: Obsolete DigiKey Programmable: Not Verified |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||||
 |
IRS2332DJPBF | Infineon Technologies |
Description: IC GATE DRVR HALF-BRIDGE 44PLCC Packaging: Tube Package / Case: 44-LCC (J-Lead), 32 Leads Mounting Type: Surface Mount Operating Temperature: -40°C ~ 150°C (TJ) Voltage - Supply: 10V ~ 20V Input Type: Inverting High Side Voltage - Max (Bootstrap): 600 V Supplier Device Package: 44-PLCC, 32 Leads (16.58x16.58) Rise / Fall Time (Typ): 80ns, 35ns Channel Type: 3-Phase Driven Configuration: Half-Bridge Number of Drivers: 6 Gate Type: IGBT, MOSFET (N-Channel) Logic Voltage - VIL, VIH: 0.8V, 2.2V Current - Peak Output (Source, Sink): 250mA, 500mA Part Status: Obsolete DigiKey Programmable: Not Verified |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||||
|
|
IRS2332DSTRPBF | Infineon Technologies |
Description: IC GATE DRVR HALF-BRIDGE 28SOIC Packaging: Tape & Reel (TR) Package / Case: 28-SOIC (0.295", 7.50mm Width) Mounting Type: Surface Mount Operating Temperature: -40°C ~ 150°C (TJ) Voltage - Supply: 10V ~ 20V Input Type: Inverting High Side Voltage - Max (Bootstrap): 600 V Supplier Device Package: 28-SOIC Rise / Fall Time (Typ): 80ns, 35ns Channel Type: 3-Phase Driven Configuration: Half-Bridge Number of Drivers: 6 Gate Type: IGBT, MOSFET (N-Channel) Logic Voltage - VIL, VIH: 0.8V, 2.2V Current - Peak Output (Source, Sink): 250mA, 500mA Part Status: Obsolete DigiKey Programmable: Not Verified |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||||
|
|
IRS2332STRPBF | Infineon Technologies |
Description: IC GATE DRVR HALF-BRIDGE 28SOIC Packaging: Tape & Reel (TR) Package / Case: 28-SOIC (0.295", 7.50mm Width) Mounting Type: Surface Mount Operating Temperature: -40°C ~ 150°C (TJ) Voltage - Supply: 10V ~ 20V Input Type: Inverting High Side Voltage - Max (Bootstrap): 600 V Supplier Device Package: 28-SOIC Rise / Fall Time (Typ): 80ns, 35ns Channel Type: 3-Phase Driven Configuration: Half-Bridge Number of Drivers: 6 Gate Type: IGBT, MOSFET (N-Channel) Logic Voltage - VIL, VIH: 0.8V, 2.2V Current - Peak Output (Source, Sink): 250mA, 500mA Part Status: Obsolete DigiKey Programmable: Not Verified |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||||
|
|
IRS26072DSTRPBF | Infineon Technologies |
Description: IC GATE DRVR HALF-BRIDGE 8SOIC Packaging: Tape & Reel (TR) Package / Case: 8-SOIC (0.154", 3.90mm Width) Mounting Type: Surface Mount Operating Temperature: -40°C ~ 150°C (TJ) Voltage - Supply: 10V ~ 20V Input Type: Non-Inverting High Side Voltage - Max (Bootstrap): 600 V Supplier Device Package: 8-SOIC Rise / Fall Time (Typ): 150ns, 50ns Channel Type: Independent Driven Configuration: Half-Bridge Number of Drivers: 2 Gate Type: IGBT, MOSFET (N-Channel) Logic Voltage - VIL, VIH: 0.8V, 2.5V Current - Peak Output (Source, Sink): 200mA, 350mA Part Status: Obsolete DigiKey Programmable: Not Verified |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||||
|
|
IRS4427STRPBF | Infineon Technologies |
Description: IC GATE DRVR LOW-SIDE 8SOIC Packaging: Tape & Reel (TR) Package / Case: 8-SOIC (0.154", 3.90mm Width) Mounting Type: Surface Mount Operating Temperature: -40°C ~ 150°C (TJ) Voltage - Supply: 6V ~ 20V Input Type: Non-Inverting Supplier Device Package: 8-SOIC Rise / Fall Time (Typ): 25ns, 25ns Channel Type: Independent Driven Configuration: Low-Side Number of Drivers: 2 Gate Type: IGBT, MOSFET (N-Channel) Logic Voltage - VIL, VIH: 0.8V, 2.5V Current - Peak Output (Source, Sink): 2.3A, 3.3A Part Status: Active DigiKey Programmable: Not Verified |
на замовлення 5000 шт: термін постачання 21-31 дні (днів) |
|
||||||||||
|
|
IRU3037ACSTR | Infineon Technologies |
Description: IC REG CTRLR BUCK/BOOST 8SOIC Packaging: Tape & Reel (TR) Package / Case: 8-SOIC (0.154", 3.90mm Width) Output Type: Transistor Driver Mounting Type: Surface Mount Function: Step-Up, Step-Down Operating Temperature: 0°C ~ 70°C (TA) Output Configuration: Positive Frequency - Switching: 400kHz Topology: Buck, Boost Voltage - Supply (Vcc/Vdd): 4.2V ~ 25V Supplier Device Package: 8-SOIC Synchronous Rectifier: Yes Control Features: Enable, Soft Start Output Phases: 1 Duty Cycle (Max): 90% Clock Sync: No Part Status: Obsolete Number of Outputs: 1 |
товару немає в наявності |
Мінімальне замовлення: 2500 шт В кошику од. на суму грн. | ||||||||||
 |
IPB60R190C6ATMA1 | Infineon Technologies |
Description: MOSFET N-CH 600V 20.2A D2PAK Packaging: Cut Tape (CT) Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB Mounting Type: Surface Mount Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 20.2A (Tc) Rds On (Max) @ Id, Vgs: 190mOhm @ 9.5A, 10V Power Dissipation (Max): 151W (Tc) Vgs(th) (Max) @ Id: 3.5V @ 630µA Supplier Device Package: PG-TO263-3 Part Status: Not For New Designs Drive Voltage (Max Rds On, Min Rds On): 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 600 V Gate Charge (Qg) (Max) @ Vgs: 63 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 1400 pF @ 100 V |
на замовлення 9450 шт: термін постачання 21-31 дні (днів) |
|
||||||||||
 |
CY14B101KA-ZS45XI | Infineon Technologies |
Description: IC NVSRAM 1MBIT PAR 44TSOP II Packaging: Tray Package / Case: 44-TSOP (0.400", 10.16mm Width) Mounting Type: Surface Mount Memory Size: 1Mbit Memory Type: Non-Volatile Operating Temperature: -40°C ~ 85°C (TA) Voltage - Supply: 2.7V ~ 3.6V Technology: NVSRAM (Non-Volatile SRAM) Memory Format: NVSRAM Supplier Device Package: 44-TSOP II Part Status: Active Write Cycle Time - Word, Page: 45ns Memory Interface: Parallel Access Time: 45 ns Memory Organization: 128K x 8 DigiKey Programmable: Not Verified |
на замовлення 100 шт: термін постачання 21-31 дні (днів) |
|
||||||||||
 |
CY14B101LA-SP25XI | Infineon Technologies |
Description: IC NVSRAM 1MBIT PARALLEL 48SSOP Packaging: Tube Package / Case: 48-BSSOP (0.295", 7.50mm Width) Mounting Type: Surface Mount Memory Size: 1Mbit Memory Type: Non-Volatile Operating Temperature: -40°C ~ 85°C (TA) Voltage - Supply: 2.7V ~ 3.6V Technology: NVSRAM (Non-Volatile SRAM) Memory Format: NVSRAM Supplier Device Package: 48-SSOP Write Cycle Time - Word, Page: 25ns Memory Interface: Parallel Access Time: 25 ns Memory Organization: 128K x 8 DigiKey Programmable: Not Verified |
на замовлення 144 шт: термін постачання 21-31 дні (днів) |
|
| IRDC3822A |
|
Виробник: Infineon Technologies
Description: BOARD EVAL SYNC BUCK CONVERTER
Description: BOARD EVAL SYNC BUCK CONVERTER
товару немає в наявності
В кошику
од. на суму грн.
| IRDC3831 |
|
Виробник: Infineon Technologies
Description: BOARD EVAL SYNC BUCK CONVERTER
Description: BOARD EVAL SYNC BUCK CONVERTER
товару немає в наявності
В кошику
од. на суму грн.
| IRDC3840 |
|
Виробник: Infineon Technologies
Description: BOARD EVAL SYNC BUCK CONVERTER
Packaging: Tube
Voltage - Output: 1.8V
Voltage - Input: 12V
Current - Output: 12A
Frequency - Switching: 600kHz
Regulator Topology: Buck
Board Type: Fully Populated
Utilized IC / Part: IR3840
Supplied Contents: Board(s)
Main Purpose: DC/DC, Step Down
Outputs and Type: 1, Non-Isolated
Description: BOARD EVAL SYNC BUCK CONVERTER
Packaging: Tube
Voltage - Output: 1.8V
Voltage - Input: 12V
Current - Output: 12A
Frequency - Switching: 600kHz
Regulator Topology: Buck
Board Type: Fully Populated
Utilized IC / Part: IR3840
Supplied Contents: Board(s)
Main Purpose: DC/DC, Step Down
Outputs and Type: 1, Non-Isolated
товару немає в наявності
В кошику
од. на суму грн.
| IRDC3841 |
|
Виробник: Infineon Technologies
Description: BOARD EVAL SYNC BUCK CONVERTER
Packaging: Tube
Voltage - Output: 1.8V
Voltage - Input: 12V
Current - Output: 8A
Frequency - Switching: 600kHz
Regulator Topology: Buck
Board Type: Fully Populated
Utilized IC / Part: IR3841
Supplied Contents: Board(s)
Main Purpose: DC/DC, Step Down
Outputs and Type: 1, Non-Isolated
Description: BOARD EVAL SYNC BUCK CONVERTER
Packaging: Tube
Voltage - Output: 1.8V
Voltage - Input: 12V
Current - Output: 8A
Frequency - Switching: 600kHz
Regulator Topology: Buck
Board Type: Fully Populated
Utilized IC / Part: IR3841
Supplied Contents: Board(s)
Main Purpose: DC/DC, Step Down
Outputs and Type: 1, Non-Isolated
товару немає в наявності
В кошику
од. на суму грн.
| IRDC3842 |
|
Виробник: Infineon Technologies
Description: BOARD EVAL SYNC BUCK CONVERTER
Description: BOARD EVAL SYNC BUCK CONVERTER
товару немає в наявності
В кошику
од. на суму грн.
| IRDC3870 |
|
Виробник: Infineon Technologies
Description: BOARD EVAL REG SUPIRBUCK DC/DC
Packaging: Box
Voltage - Output: 1.1V
Voltage - Input: 8V ~ 19V
Current - Output: 10A
Frequency - Switching: 500kHz
Regulator Topology: Buck
Board Type: Fully Populated
Utilized IC / Part: IR3870
Supplied Contents: Board(s)
Main Purpose: DC/DC, Step Down
Outputs and Type: 1, Non-Isolated
Description: BOARD EVAL REG SUPIRBUCK DC/DC
Packaging: Box
Voltage - Output: 1.1V
Voltage - Input: 8V ~ 19V
Current - Output: 10A
Frequency - Switching: 500kHz
Regulator Topology: Buck
Board Type: Fully Populated
Utilized IC / Part: IR3870
Supplied Contents: Board(s)
Main Purpose: DC/DC, Step Down
Outputs and Type: 1, Non-Isolated
товару немає в наявності
В кошику
од. на суму грн.
| IRDCIP1206-A |
|
Виробник: Infineon Technologies
Description: EVAL BOARD FOR IP1206
Description: EVAL BOARD FOR IP1206
товару немає в наявності
В кошику
од. на суму грн.
| IRDCIP1206-B |
|
Виробник: Infineon Technologies
Description: EVAL BOARD FOR IP1206
Description: EVAL BOARD FOR IP1206
товару немає в наявності
В кошику
од. на суму грн.
| IRDCIP2005C-2 |
|
Виробник: Infineon Technologies
Description: EVAL BOARD FOR IP2005C
Packaging: Box
Voltage - Output: 1.5V, 2.5V
Voltage - Input: 8.5V ~ 14.5V
Current - Output: 30A, 30A
Frequency - Switching: 500kHz
Regulator Topology: Buck
Board Type: Fully Populated
Utilized IC / Part: iP2005C
Supplied Contents: Board(s)
Main Purpose: DC/DC, Step Down
Outputs and Type: 2, Non-Isolated
Part Status: Obsolete
Description: EVAL BOARD FOR IP2005C
Packaging: Box
Voltage - Output: 1.5V, 2.5V
Voltage - Input: 8.5V ~ 14.5V
Current - Output: 30A, 30A
Frequency - Switching: 500kHz
Regulator Topology: Buck
Board Type: Fully Populated
Utilized IC / Part: iP2005C
Supplied Contents: Board(s)
Main Purpose: DC/DC, Step Down
Outputs and Type: 2, Non-Isolated
Part Status: Obsolete
товару немає в наявності
В кошику
од. на суму грн.
| IRF1405ZL-7PPBF |
|
Виробник: Infineon Technologies
Description: MOSFET N-CH 55V 120A TO263CA-7
Packaging: Tube
Package / Case: TO-263-7 (Straight Leads)
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 120A (Tc)
Rds On (Max) @ Id, Vgs: 4.9mOhm @ 88A, 10V
Power Dissipation (Max): 230W (Tc)
Vgs(th) (Max) @ Id: 4V @ 150µA
Supplier Device Package: TO-263CA-7
Part Status: Obsolete
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 55 V
Gate Charge (Qg) (Max) @ Vgs: 230 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 5360 pF @ 25 V
Description: MOSFET N-CH 55V 120A TO263CA-7
Packaging: Tube
Package / Case: TO-263-7 (Straight Leads)
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 120A (Tc)
Rds On (Max) @ Id, Vgs: 4.9mOhm @ 88A, 10V
Power Dissipation (Max): 230W (Tc)
Vgs(th) (Max) @ Id: 4V @ 150µA
Supplier Device Package: TO-263CA-7
Part Status: Obsolete
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 55 V
Gate Charge (Qg) (Max) @ Vgs: 230 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 5360 pF @ 25 V
товару немає в наявності
Мінімальне замовлення: 200 шт
В кошику
од. на суму грн.
| IRF6614TR1 |
|
Виробник: Infineon Technologies
Description: MOSFET N-CH 40V 12.7A DIRECTFET
Description: MOSFET N-CH 40V 12.7A DIRECTFET
товару немає в наявності
Мінімальне замовлення: 1000 шт
В кошику
од. на суму грн.
| IRF6644 |
|
Виробник: Infineon Technologies
Description: MOSFET N-CH 100V 10.3A DIRECTFET
Packaging: Tube
Package / Case: DirectFET™ Isometric MN
Mounting Type: Surface Mount
Operating Temperature: -40°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 10.3A (Ta), 60A (Tc)
Rds On (Max) @ Id, Vgs: 13mOhm @ 10.3A, 10V
Power Dissipation (Max): 2.8W (Ta), 89W (Tc)
Vgs(th) (Max) @ Id: 4.8V @ 150µA
Supplier Device Package: DIRECTFET™ MN
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 100 V
Gate Charge (Qg) (Max) @ Vgs: 47 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 2210 pF @ 25 V
Description: MOSFET N-CH 100V 10.3A DIRECTFET
Packaging: Tube
Package / Case: DirectFET™ Isometric MN
Mounting Type: Surface Mount
Operating Temperature: -40°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 10.3A (Ta), 60A (Tc)
Rds On (Max) @ Id, Vgs: 13mOhm @ 10.3A, 10V
Power Dissipation (Max): 2.8W (Ta), 89W (Tc)
Vgs(th) (Max) @ Id: 4.8V @ 150µA
Supplier Device Package: DIRECTFET™ MN
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 100 V
Gate Charge (Qg) (Max) @ Vgs: 47 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 2210 pF @ 25 V
товару немає в наявності
Мінімальне замовлення: 4800 шт
В кошику
од. на суму грн.
| IRF6644TR1 |
|
Виробник: Infineon Technologies
Description: MOSFET N-CH 100V 10.3A DIRECTFET
Packaging: Tape & Reel (TR)
Package / Case: DirectFET™ Isometric MN
Mounting Type: Surface Mount
Operating Temperature: -40°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 10.3A (Ta), 60A (Tc)
Rds On (Max) @ Id, Vgs: 13mOhm @ 10.3A, 10V
Power Dissipation (Max): 2.8W (Ta), 89W (Tc)
Vgs(th) (Max) @ Id: 4.8V @ 150µA
Supplier Device Package: DIRECTFET™ MN
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 100 V
Gate Charge (Qg) (Max) @ Vgs: 47 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 2210 pF @ 25 V
Description: MOSFET N-CH 100V 10.3A DIRECTFET
Packaging: Tape & Reel (TR)
Package / Case: DirectFET™ Isometric MN
Mounting Type: Surface Mount
Operating Temperature: -40°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 10.3A (Ta), 60A (Tc)
Rds On (Max) @ Id, Vgs: 13mOhm @ 10.3A, 10V
Power Dissipation (Max): 2.8W (Ta), 89W (Tc)
Vgs(th) (Max) @ Id: 4.8V @ 150µA
Supplier Device Package: DIRECTFET™ MN
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 100 V
Gate Charge (Qg) (Max) @ Vgs: 47 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 2210 pF @ 25 V
товару немає в наявності
Мінімальне замовлення: 1000 шт
В кошику
од. на суму грн.
| IRF6645 |
|
Виробник: Infineon Technologies
Description: MOSFET N-CH 100V 5.7A DIRECTFET
Packaging: Tube
Package / Case: DirectFET™ Isometric SJ
Mounting Type: Surface Mount
Operating Temperature: -40°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 5.7A (Ta), 25A (Tc)
Rds On (Max) @ Id, Vgs: 35mOhm @ 5.7A, 10V
Power Dissipation (Max): 3W (Ta), 42W (Tc)
Vgs(th) (Max) @ Id: 4.9V @ 50µA
Supplier Device Package: DIRECTFET™ SJ
Part Status: Obsolete
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 100 V
Gate Charge (Qg) (Max) @ Vgs: 20 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 890 pF @ 25 V
Description: MOSFET N-CH 100V 5.7A DIRECTFET
Packaging: Tube
Package / Case: DirectFET™ Isometric SJ
Mounting Type: Surface Mount
Operating Temperature: -40°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 5.7A (Ta), 25A (Tc)
Rds On (Max) @ Id, Vgs: 35mOhm @ 5.7A, 10V
Power Dissipation (Max): 3W (Ta), 42W (Tc)
Vgs(th) (Max) @ Id: 4.9V @ 50µA
Supplier Device Package: DIRECTFET™ SJ
Part Status: Obsolete
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 100 V
Gate Charge (Qg) (Max) @ Vgs: 20 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 890 pF @ 25 V
товару немає в наявності
Мінімальне замовлення: 4800 шт
В кошику
од. на суму грн.
| IRF6655TR1 |
|
Виробник: Infineon Technologies
Description: MOSFET N-CH 100V 4.2A DIRECTFET
Packaging: Tape & Reel (TR)
Package / Case: DirectFET™ Isometric SH
Mounting Type: Surface Mount
Operating Temperature: -40°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 4.2A (Ta), 19A (Tc)
Rds On (Max) @ Id, Vgs: 62mOhm @ 5A, 10V
Power Dissipation (Max): 2.2W (Ta), 42W (Tc)
Vgs(th) (Max) @ Id: 4.8V @ 25µA
Supplier Device Package: DIRECTFET™ SH
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 100 V
Gate Charge (Qg) (Max) @ Vgs: 11.7 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 530 pF @ 25 V
Description: MOSFET N-CH 100V 4.2A DIRECTFET
Packaging: Tape & Reel (TR)
Package / Case: DirectFET™ Isometric SH
Mounting Type: Surface Mount
Operating Temperature: -40°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 4.2A (Ta), 19A (Tc)
Rds On (Max) @ Id, Vgs: 62mOhm @ 5A, 10V
Power Dissipation (Max): 2.2W (Ta), 42W (Tc)
Vgs(th) (Max) @ Id: 4.8V @ 25µA
Supplier Device Package: DIRECTFET™ SH
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 100 V
Gate Charge (Qg) (Max) @ Vgs: 11.7 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 530 pF @ 25 V
товару немає в наявності
Мінімальне замовлення: 1000 шт
В кошику
од. на суму грн.
| IRF6665 |
|
Виробник: Infineon Technologies
Description: MOSFET N-CH 100V 4.2A DIRECTFET
Packaging: Tube
Package / Case: DirectFET™ Isometric SH
Mounting Type: Surface Mount
Operating Temperature: -40°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 4.2A (Ta), 19A (Tc)
Rds On (Max) @ Id, Vgs: 62mOhm @ 5A, 10V
Power Dissipation (Max): 2.2W (Ta), 42W (Tc)
Vgs(th) (Max) @ Id: 5V @ 250µA
Supplier Device Package: DIRECTFET™ SH
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 100 V
Gate Charge (Qg) (Max) @ Vgs: 13 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 530 pF @ 25 V
Description: MOSFET N-CH 100V 4.2A DIRECTFET
Packaging: Tube
Package / Case: DirectFET™ Isometric SH
Mounting Type: Surface Mount
Operating Temperature: -40°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 4.2A (Ta), 19A (Tc)
Rds On (Max) @ Id, Vgs: 62mOhm @ 5A, 10V
Power Dissipation (Max): 2.2W (Ta), 42W (Tc)
Vgs(th) (Max) @ Id: 5V @ 250µA
Supplier Device Package: DIRECTFET™ SH
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 100 V
Gate Charge (Qg) (Max) @ Vgs: 13 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 530 pF @ 25 V
товару немає в наявності
Мінімальне замовлення: 4800 шт
В кошику
од. на суму грн.
| IRF6665TR1 |
|
Виробник: Infineon Technologies
Description: MOSFET N-CH 100V 4.2A DIRECTFET
Packaging: Tape & Reel (TR)
Package / Case: DirectFET™ Isometric SH
Mounting Type: Surface Mount
Operating Temperature: -40°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 4.2A (Ta), 19A (Tc)
Rds On (Max) @ Id, Vgs: 62mOhm @ 5A, 10V
Power Dissipation (Max): 2.2W (Ta), 42W (Tc)
Vgs(th) (Max) @ Id: 5V @ 250µA
Supplier Device Package: DIRECTFET™ SH
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 100 V
Gate Charge (Qg) (Max) @ Vgs: 13 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 530 pF @ 25 V
Description: MOSFET N-CH 100V 4.2A DIRECTFET
Packaging: Tape & Reel (TR)
Package / Case: DirectFET™ Isometric SH
Mounting Type: Surface Mount
Operating Temperature: -40°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 4.2A (Ta), 19A (Tc)
Rds On (Max) @ Id, Vgs: 62mOhm @ 5A, 10V
Power Dissipation (Max): 2.2W (Ta), 42W (Tc)
Vgs(th) (Max) @ Id: 5V @ 250µA
Supplier Device Package: DIRECTFET™ SH
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 100 V
Gate Charge (Qg) (Max) @ Vgs: 13 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 530 pF @ 25 V
товару немає в наявності
Мінімальне замовлення: 1000 шт
В кошику
од. на суму грн.
| IRF6668TR1 |
|
Виробник: Infineon Technologies
Description: MOSFET N-CH 80V 55A DIRECTFET MZ
Packaging: Tape & Reel (TR)
Package / Case: DirectFET™ Isometric MZ
Mounting Type: Surface Mount
Operating Temperature: -40°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 55A (Tc)
Rds On (Max) @ Id, Vgs: 15mOhm @ 12A, 10V
Power Dissipation (Max): 2.8W (Ta), 89W (Tc)
Vgs(th) (Max) @ Id: 4.9V @ 100µA
Supplier Device Package: DIRECTFET™ MZ
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 80 V
Gate Charge (Qg) (Max) @ Vgs: 31 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 1320 pF @ 25 V
Description: MOSFET N-CH 80V 55A DIRECTFET MZ
Packaging: Tape & Reel (TR)
Package / Case: DirectFET™ Isometric MZ
Mounting Type: Surface Mount
Operating Temperature: -40°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 55A (Tc)
Rds On (Max) @ Id, Vgs: 15mOhm @ 12A, 10V
Power Dissipation (Max): 2.8W (Ta), 89W (Tc)
Vgs(th) (Max) @ Id: 4.9V @ 100µA
Supplier Device Package: DIRECTFET™ MZ
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 80 V
Gate Charge (Qg) (Max) @ Vgs: 31 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 1320 pF @ 25 V
товару немає в наявності
Мінімальне замовлення: 1000 шт
В кошику
од. на суму грн.
| IRF6709S2TRPBF |
|
Виробник: Infineon Technologies
Description: MOSFET N-CH 25V 12A DIRECTFET
Packaging: Tape & Reel (TR)
Package / Case: DirectFET™ Isometric S1
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 12A (Ta), 39A (Tc)
Rds On (Max) @ Id, Vgs: 7.8mOhm @ 12A, 10V
Power Dissipation (Max): 1.8W (Ta), 21W (Tc)
Vgs(th) (Max) @ Id: 2.35V @ 25µA
Supplier Device Package: DirectFET™ Isometric S1
Part Status: Obsolete
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 25 V
Gate Charge (Qg) (Max) @ Vgs: 12 nC @ 4.5 V
Input Capacitance (Ciss) (Max) @ Vds: 1010 pF @ 13 V
Description: MOSFET N-CH 25V 12A DIRECTFET
Packaging: Tape & Reel (TR)
Package / Case: DirectFET™ Isometric S1
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 12A (Ta), 39A (Tc)
Rds On (Max) @ Id, Vgs: 7.8mOhm @ 12A, 10V
Power Dissipation (Max): 1.8W (Ta), 21W (Tc)
Vgs(th) (Max) @ Id: 2.35V @ 25µA
Supplier Device Package: DirectFET™ Isometric S1
Part Status: Obsolete
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 25 V
Gate Charge (Qg) (Max) @ Vgs: 12 nC @ 4.5 V
Input Capacitance (Ciss) (Max) @ Vds: 1010 pF @ 13 V
товару немає в наявності
В кошику
од. на суму грн.
| IRF6720S2TRPBF |
|
Виробник: Infineon Technologies
Description: MOSFET N-CH 30V 11A DIRECTFET
Description: MOSFET N-CH 30V 11A DIRECTFET
товару немає в наявності
В кошику
од. на суму грн.
| IRF6723M2DTRPBF |
|
Виробник: Infineon Technologies
Description: MOSFET 2N-CH 30V 15A DIRECTFET
Description: MOSFET 2N-CH 30V 15A DIRECTFET
товару немає в наявності
В кошику
од. на суму грн.
| 62-0203PBF |
|
Виробник: Infineon Technologies
Description: MOSFET P-CH 12V 16A 8SO
Packaging: Tube
Package / Case: 8-SOIC (0.154", 3.90mm Width)
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: P-Channel
Current - Continuous Drain (Id) @ 25°C: 16A (Ta)
Rds On (Max) @ Id, Vgs: 7mOhm @ 16A, 4.5V
Power Dissipation (Max): 2.5W (Ta)
Vgs(th) (Max) @ Id: 900mV @ 250µA
Supplier Device Package: 8-SO
Part Status: Obsolete
Drive Voltage (Max Rds On, Min Rds On): 1.8V, 4.5V
Vgs (Max): ±8V
Drain to Source Voltage (Vdss): 12 V
Gate Charge (Qg) (Max) @ Vgs: 91 nC @ 4.5 V
Input Capacitance (Ciss) (Max) @ Vds: 8676 pF @ 10 V
Description: MOSFET P-CH 12V 16A 8SO
Packaging: Tube
Package / Case: 8-SOIC (0.154", 3.90mm Width)
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: P-Channel
Current - Continuous Drain (Id) @ 25°C: 16A (Ta)
Rds On (Max) @ Id, Vgs: 7mOhm @ 16A, 4.5V
Power Dissipation (Max): 2.5W (Ta)
Vgs(th) (Max) @ Id: 900mV @ 250µA
Supplier Device Package: 8-SO
Part Status: Obsolete
Drive Voltage (Max Rds On, Min Rds On): 1.8V, 4.5V
Vgs (Max): ±8V
Drain to Source Voltage (Vdss): 12 V
Gate Charge (Qg) (Max) @ Vgs: 91 nC @ 4.5 V
Input Capacitance (Ciss) (Max) @ Vds: 8676 pF @ 10 V
товару немає в наявності
В кошику
од. на суму грн.
| IRF8113GPBF |
|
Виробник: Infineon Technologies
Description: MOSFET N-CH 30V 17.2A 8SO
Packaging: Tube
Package / Case: 8-SOIC (0.154", 3.90mm Width)
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 17.2A (Ta)
Rds On (Max) @ Id, Vgs: 5.6mOhm @ 17.2A, 10V
Power Dissipation (Max): 2.5W (Ta)
Vgs(th) (Max) @ Id: 2.2V @ 250µA
Supplier Device Package: 8-SO
Part Status: Obsolete
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 30 V
Gate Charge (Qg) (Max) @ Vgs: 36 nC @ 4.5 V
Input Capacitance (Ciss) (Max) @ Vds: 2910 pF @ 15 V
Description: MOSFET N-CH 30V 17.2A 8SO
Packaging: Tube
Package / Case: 8-SOIC (0.154", 3.90mm Width)
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 17.2A (Ta)
Rds On (Max) @ Id, Vgs: 5.6mOhm @ 17.2A, 10V
Power Dissipation (Max): 2.5W (Ta)
Vgs(th) (Max) @ Id: 2.2V @ 250µA
Supplier Device Package: 8-SO
Part Status: Obsolete
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 30 V
Gate Charge (Qg) (Max) @ Vgs: 36 nC @ 4.5 V
Input Capacitance (Ciss) (Max) @ Vds: 2910 pF @ 15 V
товару немає в наявності
В кошику
од. на суму грн.
| IRF8252PBF |
|
Виробник: Infineon Technologies
Description: MOSFET N-CH 25V 25A 8SO
Packaging: Tube
Package / Case: 8-SOIC (0.154", 3.90mm Width)
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 25A (Ta)
Rds On (Max) @ Id, Vgs: 2.7mOhm @ 25A, 10V
Power Dissipation (Max): 2.5W (Ta)
Vgs(th) (Max) @ Id: 2.35V @ 100µA
Supplier Device Package: 8-SO
Part Status: Obsolete
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 25 V
Gate Charge (Qg) (Max) @ Vgs: 53 nC @ 4.5 V
Input Capacitance (Ciss) (Max) @ Vds: 5305 pF @ 13 V
Description: MOSFET N-CH 25V 25A 8SO
Packaging: Tube
Package / Case: 8-SOIC (0.154", 3.90mm Width)
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 25A (Ta)
Rds On (Max) @ Id, Vgs: 2.7mOhm @ 25A, 10V
Power Dissipation (Max): 2.5W (Ta)
Vgs(th) (Max) @ Id: 2.35V @ 100µA
Supplier Device Package: 8-SO
Part Status: Obsolete
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 25 V
Gate Charge (Qg) (Max) @ Vgs: 53 nC @ 4.5 V
Input Capacitance (Ciss) (Max) @ Vds: 5305 pF @ 13 V
товару немає в наявності
В кошику
од. на суму грн.
| IRF8788PBF |
|
Виробник: Infineon Technologies
Description: MOSFET N-CH 30V 24A 8SO
Packaging: Tube
Package / Case: 8-SOIC (0.154", 3.90mm Width)
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 24A (Ta)
Rds On (Max) @ Id, Vgs: 2.8mOhm @ 24A, 10V
Power Dissipation (Max): 2.5W (Ta)
Vgs(th) (Max) @ Id: 2.35V @ 100µA
Supplier Device Package: 8-SO
Part Status: Discontinued at Digi-Key
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 30 V
Gate Charge (Qg) (Max) @ Vgs: 66 nC @ 4.5 V
Input Capacitance (Ciss) (Max) @ Vds: 5720 pF @ 15 V
Description: MOSFET N-CH 30V 24A 8SO
Packaging: Tube
Package / Case: 8-SOIC (0.154", 3.90mm Width)
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 24A (Ta)
Rds On (Max) @ Id, Vgs: 2.8mOhm @ 24A, 10V
Power Dissipation (Max): 2.5W (Ta)
Vgs(th) (Max) @ Id: 2.35V @ 100µA
Supplier Device Package: 8-SO
Part Status: Discontinued at Digi-Key
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 30 V
Gate Charge (Qg) (Max) @ Vgs: 66 nC @ 4.5 V
Input Capacitance (Ciss) (Max) @ Vds: 5720 pF @ 15 V
товару немає в наявності
В кошику
од. на суму грн.
| IRF8910GPBF |
|
Виробник: Infineon Technologies
Description: MOSFET 2N-CH 20V 10A 8SO
Packaging: Tube
Package / Case: 8-SOIC (0.154", 3.90mm Width)
Mounting Type: Surface Mount
Configuration: 2 N-Channel (Dual)
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
Power - Max: 2W
Drain to Source Voltage (Vdss): 20V
Current - Continuous Drain (Id) @ 25°C: 10A
Input Capacitance (Ciss) (Max) @ Vds: 960pF @ 10V
Rds On (Max) @ Id, Vgs: 13.4mOhm @ 10A, 10V
Gate Charge (Qg) (Max) @ Vgs: 11nC @ 4.5V
FET Feature: Logic Level Gate
Vgs(th) (Max) @ Id: 2.55V @ 250µA
Supplier Device Package: 8-SO
Part Status: Obsolete
Description: MOSFET 2N-CH 20V 10A 8SO
Packaging: Tube
Package / Case: 8-SOIC (0.154", 3.90mm Width)
Mounting Type: Surface Mount
Configuration: 2 N-Channel (Dual)
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
Power - Max: 2W
Drain to Source Voltage (Vdss): 20V
Current - Continuous Drain (Id) @ 25°C: 10A
Input Capacitance (Ciss) (Max) @ Vds: 960pF @ 10V
Rds On (Max) @ Id, Vgs: 13.4mOhm @ 10A, 10V
Gate Charge (Qg) (Max) @ Vgs: 11nC @ 4.5V
FET Feature: Logic Level Gate
Vgs(th) (Max) @ Id: 2.55V @ 250µA
Supplier Device Package: 8-SO
Part Status: Obsolete
товару немає в наявності
В кошику
од. на суму грн.
| IRFH7911TRPBF |
|
Виробник: Infineon Technologies
Description: MOSFET 2N-CH 30V 13A/28A PQFN
Packaging: Tape & Reel (TR)
Package / Case: 18-PowerVQFN
Mounting Type: Surface Mount
Configuration: 2 N-Channel (Dual)
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
Power - Max: 2.4W, 3.4W
Drain to Source Voltage (Vdss): 30V
Current - Continuous Drain (Id) @ 25°C: 13A, 28A
Input Capacitance (Ciss) (Max) @ Vds: 1060pF @ 15V
Rds On (Max) @ Id, Vgs: 8.6mOhm @ 12A, 10V
Gate Charge (Qg) (Max) @ Vgs: 12nC @ 4.5V
FET Feature: Logic Level Gate
Vgs(th) (Max) @ Id: 2.35V @ 25µA
Supplier Device Package: PQFN (5x6)
Description: MOSFET 2N-CH 30V 13A/28A PQFN
Packaging: Tape & Reel (TR)
Package / Case: 18-PowerVQFN
Mounting Type: Surface Mount
Configuration: 2 N-Channel (Dual)
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
Power - Max: 2.4W, 3.4W
Drain to Source Voltage (Vdss): 30V
Current - Continuous Drain (Id) @ 25°C: 13A, 28A
Input Capacitance (Ciss) (Max) @ Vds: 1060pF @ 15V
Rds On (Max) @ Id, Vgs: 8.6mOhm @ 12A, 10V
Gate Charge (Qg) (Max) @ Vgs: 12nC @ 4.5V
FET Feature: Logic Level Gate
Vgs(th) (Max) @ Id: 2.35V @ 25µA
Supplier Device Package: PQFN (5x6)
товару немає в наявності
В кошику
од. на суму грн.
| IRFR1018ETRRPBF |
|
Виробник: Infineon Technologies
Description: MOSFET N-CH 60V 56A DPAK
Packaging: Tape & Reel (TR)
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 56A (Tc)
Rds On (Max) @ Id, Vgs: 8.4mOhm @ 47A, 10V
Power Dissipation (Max): 110W (Tc)
Vgs(th) (Max) @ Id: 4V @ 100µA
Supplier Device Package: TO-252AA (DPAK)
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 60 V
Gate Charge (Qg) (Max) @ Vgs: 69 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 2290 pF @ 50 V
Description: MOSFET N-CH 60V 56A DPAK
Packaging: Tape & Reel (TR)
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 56A (Tc)
Rds On (Max) @ Id, Vgs: 8.4mOhm @ 47A, 10V
Power Dissipation (Max): 110W (Tc)
Vgs(th) (Max) @ Id: 4V @ 100µA
Supplier Device Package: TO-252AA (DPAK)
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 60 V
Gate Charge (Qg) (Max) @ Vgs: 69 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 2290 pF @ 50 V
товару немає в наявності
В кошику
од. на суму грн.
| IRFR3410TRRPBF |
|
Виробник: Infineon Technologies
Description: MOSFET N-CH 100V 31A DPAK
Packaging: Tape & Reel (TR)
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 31A (Tc)
Rds On (Max) @ Id, Vgs: 39mOhm @ 18A, 10V
Power Dissipation (Max): 3W (Ta), 110W (Tc)
Vgs(th) (Max) @ Id: 4V @ 250µA
Supplier Device Package: TO-252AA (DPAK)
Part Status: Obsolete
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 100 V
Gate Charge (Qg) (Max) @ Vgs: 56 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 1690 pF @ 25 V
Description: MOSFET N-CH 100V 31A DPAK
Packaging: Tape & Reel (TR)
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 31A (Tc)
Rds On (Max) @ Id, Vgs: 39mOhm @ 18A, 10V
Power Dissipation (Max): 3W (Ta), 110W (Tc)
Vgs(th) (Max) @ Id: 4V @ 250µA
Supplier Device Package: TO-252AA (DPAK)
Part Status: Obsolete
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 100 V
Gate Charge (Qg) (Max) @ Vgs: 56 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 1690 pF @ 25 V
товару немає в наявності
В кошику
од. на суму грн.
| IRFS4229TRLPBF |
|
Виробник: Infineon Technologies
Description: MOSFET N-CH 250V 45A D2PAK
Packaging: Tape & Reel (TR)
Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
Mounting Type: Surface Mount
Operating Temperature: -40°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 45A (Tc)
Rds On (Max) @ Id, Vgs: 48mOhm @ 26A, 10V
Power Dissipation (Max): 330W (Tc)
Vgs(th) (Max) @ Id: 5V @ 250µA
Supplier Device Package: PG-TO263-3
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±30V
Drain to Source Voltage (Vdss): 250 V
Gate Charge (Qg) (Max) @ Vgs: 110 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 4560 pF @ 25 V
Description: MOSFET N-CH 250V 45A D2PAK
Packaging: Tape & Reel (TR)
Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
Mounting Type: Surface Mount
Operating Temperature: -40°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 45A (Tc)
Rds On (Max) @ Id, Vgs: 48mOhm @ 26A, 10V
Power Dissipation (Max): 330W (Tc)
Vgs(th) (Max) @ Id: 5V @ 250µA
Supplier Device Package: PG-TO263-3
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±30V
Drain to Source Voltage (Vdss): 250 V
Gate Charge (Qg) (Max) @ Vgs: 110 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 4560 pF @ 25 V
на замовлення 800 шт:
термін постачання 21-31 дні (днів)
| Кількість | Ціна без ПДВ |
|---|---|
| 800+ | 116.99 грн |
| IRLR8726PBF |
|
Виробник: Infineon Technologies
Description: MOSFET N-CH 30V 86A DPAK
Packaging: Tube
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 86A (Tc)
Rds On (Max) @ Id, Vgs: 5.8mOhm @ 25A, 10V
Power Dissipation (Max): 75W (Tc)
Vgs(th) (Max) @ Id: 2.35V @ 50µA
Supplier Device Package: TO-252AA (DPAK)
Part Status: Discontinued at Digi-Key
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 30 V
Gate Charge (Qg) (Max) @ Vgs: 23 nC @ 4.5 V
Input Capacitance (Ciss) (Max) @ Vds: 2150 pF @ 15 V
Description: MOSFET N-CH 30V 86A DPAK
Packaging: Tube
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 86A (Tc)
Rds On (Max) @ Id, Vgs: 5.8mOhm @ 25A, 10V
Power Dissipation (Max): 75W (Tc)
Vgs(th) (Max) @ Id: 2.35V @ 50µA
Supplier Device Package: TO-252AA (DPAK)
Part Status: Discontinued at Digi-Key
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 30 V
Gate Charge (Qg) (Max) @ Vgs: 23 nC @ 4.5 V
Input Capacitance (Ciss) (Max) @ Vds: 2150 pF @ 15 V
товару немає в наявності
В кошику
од. на суму грн.
| IRLR8726TRLPBF |
|
Виробник: Infineon Technologies
Description: MOSFET N-CH 30V 86A DPAK
Packaging: Tape & Reel (TR)
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 86A (Tc)
Rds On (Max) @ Id, Vgs: 5.8mOhm @ 25A, 10V
Power Dissipation (Max): 75W (Tc)
Vgs(th) (Max) @ Id: 2.35V @ 50µA
Supplier Device Package: TO-252AA (DPAK)
Part Status: Not For New Designs
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 30 V
Gate Charge (Qg) (Max) @ Vgs: 23 nC @ 4.5 V
Input Capacitance (Ciss) (Max) @ Vds: 2150 pF @ 15 V
Description: MOSFET N-CH 30V 86A DPAK
Packaging: Tape & Reel (TR)
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 86A (Tc)
Rds On (Max) @ Id, Vgs: 5.8mOhm @ 25A, 10V
Power Dissipation (Max): 75W (Tc)
Vgs(th) (Max) @ Id: 2.35V @ 50µA
Supplier Device Package: TO-252AA (DPAK)
Part Status: Not For New Designs
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 30 V
Gate Charge (Qg) (Max) @ Vgs: 23 nC @ 4.5 V
Input Capacitance (Ciss) (Max) @ Vds: 2150 pF @ 15 V
товару немає в наявності
Мінімальне замовлення: 3000 шт
В кошику
од. на суму грн.
| IRLR8729PBF |
|
Виробник: Infineon Technologies
Description: MOSFET N-CH 30V 58A D-PAK
Packaging: Tube
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 58A (Tc)
Rds On (Max) @ Id, Vgs: 8.9mOhm @ 25A, 10V
Power Dissipation (Max): 55W (Tc)
Vgs(th) (Max) @ Id: 2.35V @ 25µA
Supplier Device Package: TO-252AA (DPAK)
Part Status: Discontinued at Digi-Key
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 30 V
Gate Charge (Qg) (Max) @ Vgs: 16 nC @ 4.5 V
Input Capacitance (Ciss) (Max) @ Vds: 1350 pF @ 15 V
Description: MOSFET N-CH 30V 58A D-PAK
Packaging: Tube
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 58A (Tc)
Rds On (Max) @ Id, Vgs: 8.9mOhm @ 25A, 10V
Power Dissipation (Max): 55W (Tc)
Vgs(th) (Max) @ Id: 2.35V @ 25µA
Supplier Device Package: TO-252AA (DPAK)
Part Status: Discontinued at Digi-Key
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 30 V
Gate Charge (Qg) (Max) @ Vgs: 16 nC @ 4.5 V
Input Capacitance (Ciss) (Max) @ Vds: 1350 pF @ 15 V
товару немає в наявності
В кошику
од. на суму грн.
| IRLR8729TRLPBF |
|
Виробник: Infineon Technologies
Description: MOSFET N-CH 30V 58A D-PAK
Packaging: Tape & Reel (TR)
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 58A (Tc)
Rds On (Max) @ Id, Vgs: 8.9mOhm @ 25A, 10V
Power Dissipation (Max): 55W (Tc)
Vgs(th) (Max) @ Id: 2.35V @ 25µA
Supplier Device Package: TO-252AA (DPAK)
Part Status: Obsolete
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 30 V
Gate Charge (Qg) (Max) @ Vgs: 16 nC @ 4.5 V
Input Capacitance (Ciss) (Max) @ Vds: 1350 pF @ 15 V
Description: MOSFET N-CH 30V 58A D-PAK
Packaging: Tape & Reel (TR)
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 58A (Tc)
Rds On (Max) @ Id, Vgs: 8.9mOhm @ 25A, 10V
Power Dissipation (Max): 55W (Tc)
Vgs(th) (Max) @ Id: 2.35V @ 25µA
Supplier Device Package: TO-252AA (DPAK)
Part Status: Obsolete
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 30 V
Gate Charge (Qg) (Max) @ Vgs: 16 nC @ 4.5 V
Input Capacitance (Ciss) (Max) @ Vds: 1350 pF @ 15 V
товару немає в наявності
В кошику
од. на суму грн.
| IRLS3036TRRPBF |
|
Виробник: Infineon Technologies
Description: MOSFET N-CH 60V 195A D2PAK
Packaging: Tape & Reel (TR)
Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 195A (Tc)
Rds On (Max) @ Id, Vgs: 2.4mOhm @ 165A, 10V
Power Dissipation (Max): 380W (Tc)
Vgs(th) (Max) @ Id: 2.5V @ 250µA
Supplier Device Package: D2PAK
Part Status: Obsolete
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±16V
Drain to Source Voltage (Vdss): 60 V
Gate Charge (Qg) (Max) @ Vgs: 140 nC @ 4.5 V
Input Capacitance (Ciss) (Max) @ Vds: 11210 pF @ 50 V
Description: MOSFET N-CH 60V 195A D2PAK
Packaging: Tape & Reel (TR)
Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 195A (Tc)
Rds On (Max) @ Id, Vgs: 2.4mOhm @ 165A, 10V
Power Dissipation (Max): 380W (Tc)
Vgs(th) (Max) @ Id: 2.5V @ 250µA
Supplier Device Package: D2PAK
Part Status: Obsolete
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±16V
Drain to Source Voltage (Vdss): 60 V
Gate Charge (Qg) (Max) @ Vgs: 140 nC @ 4.5 V
Input Capacitance (Ciss) (Max) @ Vds: 11210 pF @ 50 V
товару немає в наявності
В кошику
од. на суму грн.
| IRLU8256PBF |
|
Виробник: Infineon Technologies
Description: MOSFET N-CH 25V 81A IPAK
Packaging: Tube
Package / Case: TO-251-3 Short Leads, IPak, TO-251AA
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 81A (Tc)
Rds On (Max) @ Id, Vgs: 5.7mOhm @ 25A, 10V
Power Dissipation (Max): 63W (Tc)
Vgs(th) (Max) @ Id: 2.35V @ 25µA
Supplier Device Package: IPAK
Part Status: Obsolete
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 25 V
Gate Charge (Qg) (Max) @ Vgs: 15 nC @ 4.5 V
Input Capacitance (Ciss) (Max) @ Vds: 1470 pF @ 13 V
Description: MOSFET N-CH 25V 81A IPAK
Packaging: Tube
Package / Case: TO-251-3 Short Leads, IPak, TO-251AA
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 81A (Tc)
Rds On (Max) @ Id, Vgs: 5.7mOhm @ 25A, 10V
Power Dissipation (Max): 63W (Tc)
Vgs(th) (Max) @ Id: 2.35V @ 25µA
Supplier Device Package: IPAK
Part Status: Obsolete
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 25 V
Gate Charge (Qg) (Max) @ Vgs: 15 nC @ 4.5 V
Input Capacitance (Ciss) (Max) @ Vds: 1470 pF @ 13 V
товару немає в наявності
В кошику
од. на суму грн.
| IRLU8259PBF |
|
Виробник: Infineon Technologies
Description: MOSFET N-CH 25V 57A IPAK
Packaging: Tube
Package / Case: TO-251-3 Short Leads, IPak, TO-251AA
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 57A (Tc)
Rds On (Max) @ Id, Vgs: 8.7mOhm @ 21A, 10V
Power Dissipation (Max): 48W (Tc)
Vgs(th) (Max) @ Id: 2.35V @ 25µA
Supplier Device Package: IPAK
Part Status: Obsolete
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 25 V
Gate Charge (Qg) (Max) @ Vgs: 10 nC @ 4.5 V
Input Capacitance (Ciss) (Max) @ Vds: 900 pF @ 13 V
Voltage Coupled to Gate Charge (Qg) (Max) @ Vgs: 4.5
Voltage Coupled to Input Capacitance (Ciss) (Max) @ Vds: 13
Description: MOSFET N-CH 25V 57A IPAK
Packaging: Tube
Package / Case: TO-251-3 Short Leads, IPak, TO-251AA
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 57A (Tc)
Rds On (Max) @ Id, Vgs: 8.7mOhm @ 21A, 10V
Power Dissipation (Max): 48W (Tc)
Vgs(th) (Max) @ Id: 2.35V @ 25µA
Supplier Device Package: IPAK
Part Status: Obsolete
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 25 V
Gate Charge (Qg) (Max) @ Vgs: 10 nC @ 4.5 V
Input Capacitance (Ciss) (Max) @ Vds: 900 pF @ 13 V
Voltage Coupled to Gate Charge (Qg) (Max) @ Vgs: 4.5
Voltage Coupled to Input Capacitance (Ciss) (Max) @ Vds: 13
товару немає в наявності
В кошику
од. на суму грн.
| IRMCF343TY |
|
Виробник: Infineon Technologies
Description: IC MOTOR DRIVER 64MQFP
Description: IC MOTOR DRIVER 64MQFP
товару немає в наявності
Мінімальне замовлення: 1600 шт
В кошику
од. на суму грн.
| IRMCF371TY |
|
Виробник: Infineon Technologies
Description: IC MTRDRV 1.62-1.98/3-3.6V 48QFP
Interface: I²C, RS-232, SPI
Function: Controller - Commutation, Direction Management
Mounting Type: Surface Mount
Package / Case: 48-LQFP
Packaging: Tray
Motor Type - AC, DC: AC, Synchronous
Supplier Device Package: 48-QFP (7x7)
Technology: IGBT
Applications: Appliance
Voltage - Supply: 1.62V ~ 1.98V, 3V ~ 3.6V
Output Configuration: Pre-Driver - Half Bridge (3)
Operating Temperature: -40°C ~ 85°C (TA)
Description: IC MTRDRV 1.62-1.98/3-3.6V 48QFP
Interface: I²C, RS-232, SPI
Function: Controller - Commutation, Direction Management
Mounting Type: Surface Mount
Package / Case: 48-LQFP
Packaging: Tray
Motor Type - AC, DC: AC, Synchronous
Supplier Device Package: 48-QFP (7x7)
Technology: IGBT
Applications: Appliance
Voltage - Supply: 1.62V ~ 1.98V, 3V ~ 3.6V
Output Configuration: Pre-Driver - Half Bridge (3)
Operating Temperature: -40°C ~ 85°C (TA)
товару немає в наявності
Мінімальне замовлення: 1500 шт
В кошику
од. на суму грн.
| IRMCK371TY |
|
Виробник: Infineon Technologies
Description: IC MTRDRV 1.62-1.98/3-3.6V 48QFP
Motor Type - AC, DC: AC, Synchronous
Supplier Device Package: 48-QFP (7x7)
Technology: IGBT
Applications: Appliance
Voltage - Supply: 1.62V ~ 1.98V, 3V ~ 3.6V
Output Configuration: Pre-Driver - Half Bridge (3)
Operating Temperature: -40°C ~ 85°C (TA)
Interface: I2C, RS-232, SPI
Function: Controller - Commutation, Direction Management
Mounting Type: Surface Mount
Package / Case: 48-LQFP
Packaging: Tray
Description: IC MTRDRV 1.62-1.98/3-3.6V 48QFP
Motor Type - AC, DC: AC, Synchronous
Supplier Device Package: 48-QFP (7x7)
Technology: IGBT
Applications: Appliance
Voltage - Supply: 1.62V ~ 1.98V, 3V ~ 3.6V
Output Configuration: Pre-Driver - Half Bridge (3)
Operating Temperature: -40°C ~ 85°C (TA)
Interface: I2C, RS-232, SPI
Function: Controller - Commutation, Direction Management
Mounting Type: Surface Mount
Package / Case: 48-LQFP
Packaging: Tray
товару немає в наявності
Мінімальне замовлення: 1500 шт
В кошику
од. на суму грн.
| IRPP3637-06A |
|
Виробник: Infineon Technologies
Description: BOARD REF DESIGN POWIR+
Part Status: Obsolete
Outputs and Type: 1, Non-Isolated
Main Purpose: DC/DC, Step Down
Supplied Contents: Board(s)
Utilized IC / Part: IR3637, IRF8910
Board Type: Fully Populated
Regulator Topology: Buck
Frequency - Switching: 600kHz
Current - Output: 6A
Voltage - Input: 4.5V ~ 5.5V
Voltage - Output: 1.25V
Packaging: Tube
Description: BOARD REF DESIGN POWIR+
Part Status: Obsolete
Outputs and Type: 1, Non-Isolated
Main Purpose: DC/DC, Step Down
Supplied Contents: Board(s)
Utilized IC / Part: IR3637, IRF8910
Board Type: Fully Populated
Regulator Topology: Buck
Frequency - Switching: 600kHz
Current - Output: 6A
Voltage - Input: 4.5V ~ 5.5V
Voltage - Output: 1.25V
Packaging: Tube
товару немає в наявності
В кошику
од. на суму грн.
| IRS2093MTRPBF |
|
Виробник: Infineon Technologies
Description: IC AUDIO AMP D PG-VQFN-48
Packaging: Tape & Reel (TR)
Part Status: Active
Supplier Device Package: PG-VQFN-48
Voltage - Supply: 10V ~ 15V
Operating Temperature: -40°C ~ 125°C (TA)
Type: Class D
Mounting Type: Surface Mount
Output Type: 4-Channel (Quad)
Package / Case: 48-VFQFN Exposed Pad
Features: Depop, Short-Circuit Protection, Shutdown
Description: IC AUDIO AMP D PG-VQFN-48
Packaging: Tape & Reel (TR)
Part Status: Active
Supplier Device Package: PG-VQFN-48
Voltage - Supply: 10V ~ 15V
Operating Temperature: -40°C ~ 125°C (TA)
Type: Class D
Mounting Type: Surface Mount
Output Type: 4-Channel (Quad)
Package / Case: 48-VFQFN Exposed Pad
Features: Depop, Short-Circuit Protection, Shutdown
товару немає в наявності
Мінімальне замовлення: 3000 шт
В кошику
од. на суму грн.
| IRS210614STRPBF |
|
Виробник: Infineon Technologies
Description: IC GATE DRVR HALF-BRIDGE 14SOIC
Packaging: Tape & Reel (TR)
Package / Case: 14-SOIC (0.154", 3.90mm Width)
Mounting Type: Surface Mount
Operating Temperature: -40°C ~ 150°C (TJ)
Voltage - Supply: 10V ~ 20V
Input Type: Non-Inverting
High Side Voltage - Max (Bootstrap): 600 V
Supplier Device Package: 14-SOIC
Rise / Fall Time (Typ): 100ns, 35ns
Channel Type: Independent
Driven Configuration: Half-Bridge
Number of Drivers: 2
Gate Type: IGBT, MOSFET (N-Channel)
Logic Voltage - VIL, VIH: 0.8V, 2.5V
Current - Peak Output (Source, Sink): 290mA, 600mA
DigiKey Programmable: Not Verified
Description: IC GATE DRVR HALF-BRIDGE 14SOIC
Packaging: Tape & Reel (TR)
Package / Case: 14-SOIC (0.154", 3.90mm Width)
Mounting Type: Surface Mount
Operating Temperature: -40°C ~ 150°C (TJ)
Voltage - Supply: 10V ~ 20V
Input Type: Non-Inverting
High Side Voltage - Max (Bootstrap): 600 V
Supplier Device Package: 14-SOIC
Rise / Fall Time (Typ): 100ns, 35ns
Channel Type: Independent
Driven Configuration: Half-Bridge
Number of Drivers: 2
Gate Type: IGBT, MOSFET (N-Channel)
Logic Voltage - VIL, VIH: 0.8V, 2.5V
Current - Peak Output (Source, Sink): 290mA, 600mA
DigiKey Programmable: Not Verified
товару немає в наявності
В кошику
од. на суму грн.
| IRS2123SPBF |
|
Виробник: Infineon Technologies
Description: IC GATE DRVR HIGH-SIDE 8SOIC
Packaging: Tube
Package / Case: 8-SOIC (0.154", 3.90mm Width)
Mounting Type: Surface Mount
Operating Temperature: -40°C ~ 150°C (TJ)
Voltage - Supply: 10V ~ 20V
Input Type: Non-Inverting
High Side Voltage - Max (Bootstrap): 600 V
Supplier Device Package: 8-SOIC
Rise / Fall Time (Typ): 80ns, 80ns
Channel Type: Single
Driven Configuration: High-Side
Number of Drivers: 1
Gate Type: IGBT, N-Channel MOSFET
Current - Peak Output (Source, Sink): 500mA, 500mA
Part Status: Obsolete
DigiKey Programmable: Not Verified
Description: IC GATE DRVR HIGH-SIDE 8SOIC
Packaging: Tube
Package / Case: 8-SOIC (0.154", 3.90mm Width)
Mounting Type: Surface Mount
Operating Temperature: -40°C ~ 150°C (TJ)
Voltage - Supply: 10V ~ 20V
Input Type: Non-Inverting
High Side Voltage - Max (Bootstrap): 600 V
Supplier Device Package: 8-SOIC
Rise / Fall Time (Typ): 80ns, 80ns
Channel Type: Single
Driven Configuration: High-Side
Number of Drivers: 1
Gate Type: IGBT, N-Channel MOSFET
Current - Peak Output (Source, Sink): 500mA, 500mA
Part Status: Obsolete
DigiKey Programmable: Not Verified
товару немає в наявності
В кошику
од. на суму грн.
| IRS21571DSTRPBF |
|
Виробник: Infineon Technologies
Description: IC BALLAST CNTRL 48.3KHZ 16SOIC
Packaging: Tape & Reel (TR)
Package / Case: 16-SOIC (0.154", 3.90mm Width)
Mounting Type: Surface Mount
Frequency: 43.7kHz ~ 48.3kHz
Type: Ballast Controller
Operating Temperature: -40°C ~ 125°C
Voltage - Supply: 11.5V ~ 15.6V
Supplier Device Package: 16-SOIC
Current - Supply: 10 mA
Description: IC BALLAST CNTRL 48.3KHZ 16SOIC
Packaging: Tape & Reel (TR)
Package / Case: 16-SOIC (0.154", 3.90mm Width)
Mounting Type: Surface Mount
Frequency: 43.7kHz ~ 48.3kHz
Type: Ballast Controller
Operating Temperature: -40°C ~ 125°C
Voltage - Supply: 11.5V ~ 15.6V
Supplier Device Package: 16-SOIC
Current - Supply: 10 mA
товару немає в наявності
В кошику
од. на суму грн.
| IRS21850STRPBF |
|
Виробник: Infineon Technologies
Description: IC GATE DRVR HIGH-SIDE 8SOIC
Packaging: Tape & Reel (TR)
Package / Case: 8-SOIC (0.154", 3.90mm Width)
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Voltage - Supply: 10V ~ 20V
Input Type: Non-Inverting
High Side Voltage - Max (Bootstrap): 600 V
Supplier Device Package: 8-SOIC
Rise / Fall Time (Typ): 15ns, 15ns
Channel Type: Single
Driven Configuration: High-Side
Number of Drivers: 1
Gate Type: IGBT, MOSFET (N-Channel)
Logic Voltage - VIL, VIH: 0.8V, 2.5V
Current - Peak Output (Source, Sink): 4A, 4A
Part Status: Obsolete
DigiKey Programmable: Not Verified
Description: IC GATE DRVR HIGH-SIDE 8SOIC
Packaging: Tape & Reel (TR)
Package / Case: 8-SOIC (0.154", 3.90mm Width)
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Voltage - Supply: 10V ~ 20V
Input Type: Non-Inverting
High Side Voltage - Max (Bootstrap): 600 V
Supplier Device Package: 8-SOIC
Rise / Fall Time (Typ): 15ns, 15ns
Channel Type: Single
Driven Configuration: High-Side
Number of Drivers: 1
Gate Type: IGBT, MOSFET (N-Channel)
Logic Voltage - VIL, VIH: 0.8V, 2.5V
Current - Peak Output (Source, Sink): 4A, 4A
Part Status: Obsolete
DigiKey Programmable: Not Verified
товару немає в наявності
В кошику
од. на суму грн.
| IRS21856STRPBF |
|
Виробник: Infineon Technologies
Description: IC GATE DRVR HALF-BRIDGE 14SOIC
Packaging: Tape & Reel (TR)
Package / Case: 14-SOIC (0.154", 3.90mm Width)
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Voltage - Supply: 10V ~ 20V
Input Type: Non-Inverting
High Side Voltage - Max (Bootstrap): 600 V
Supplier Device Package: 14-SOIC
Rise / Fall Time (Typ): 30ns, 20ns
Channel Type: Independent
Driven Configuration: Half-Bridge
Number of Drivers: 2
Gate Type: IGBT, MOSFET (N-Channel)
Logic Voltage - VIL, VIH: 0.8V, 3.5V
Current - Peak Output (Source, Sink): 500mA, 500mA
DigiKey Programmable: Not Verified
Description: IC GATE DRVR HALF-BRIDGE 14SOIC
Packaging: Tape & Reel (TR)
Package / Case: 14-SOIC (0.154", 3.90mm Width)
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Voltage - Supply: 10V ~ 20V
Input Type: Non-Inverting
High Side Voltage - Max (Bootstrap): 600 V
Supplier Device Package: 14-SOIC
Rise / Fall Time (Typ): 30ns, 20ns
Channel Type: Independent
Driven Configuration: Half-Bridge
Number of Drivers: 2
Gate Type: IGBT, MOSFET (N-Channel)
Logic Voltage - VIL, VIH: 0.8V, 3.5V
Current - Peak Output (Source, Sink): 500mA, 500mA
DigiKey Programmable: Not Verified
товару немає в наявності
В кошику
од. на суму грн.
| IRS21858STRPBF |
|
Виробник: Infineon Technologies
Description: IC GATE DRVR HIGH-SIDE 16SOIC
Packaging: Tape & Reel (TR)
Package / Case: 16-SOIC (0.154", 3.90mm Width)
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Voltage - Supply: 10V ~ 20V
Input Type: Non-Inverting
High Side Voltage - Max (Bootstrap): 600 V
Supplier Device Package: 16-SOIC
Rise / Fall Time (Typ): 60ns, 20ns
Channel Type: Independent
Driven Configuration: High-Side
Number of Drivers: 2
Gate Type: IGBT, N-Channel MOSFET
Logic Voltage - VIL, VIH: 0.8V, 3.5V
Current - Peak Output (Source, Sink): 290mA, 600mA
DigiKey Programmable: Not Verified
Description: IC GATE DRVR HIGH-SIDE 16SOIC
Packaging: Tape & Reel (TR)
Package / Case: 16-SOIC (0.154", 3.90mm Width)
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Voltage - Supply: 10V ~ 20V
Input Type: Non-Inverting
High Side Voltage - Max (Bootstrap): 600 V
Supplier Device Package: 16-SOIC
Rise / Fall Time (Typ): 60ns, 20ns
Channel Type: Independent
Driven Configuration: High-Side
Number of Drivers: 2
Gate Type: IGBT, N-Channel MOSFET
Logic Voltage - VIL, VIH: 0.8V, 3.5V
Current - Peak Output (Source, Sink): 290mA, 600mA
DigiKey Programmable: Not Verified
товару немає в наявності
В кошику
од. на суму грн.
| IRS21956STRPBF |
|
Виробник: Infineon Technologies
Description: IC GATE DRVR HALF-BRIDGE 20SOIC
Packaging: Tape & Reel (TR)
Package / Case: 20-SOIC (0.295", 7.50mm Width)
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Voltage - Supply: 10V ~ 20V
Input Type: Non-Inverting
High Side Voltage - Max (Bootstrap): 600 V
Supplier Device Package: 20-SOIC
Rise / Fall Time (Typ): 25ns, 15ns
Channel Type: Independent
Driven Configuration: Half-Bridge
Number of Drivers: 2
Gate Type: IGBT, N-Channel MOSFET
Logic Voltage - VIL, VIH: 0.8V, 3.5V
Current - Peak Output (Source, Sink): 500mA, 500mA
DigiKey Programmable: Not Verified
Description: IC GATE DRVR HALF-BRIDGE 20SOIC
Packaging: Tape & Reel (TR)
Package / Case: 20-SOIC (0.295", 7.50mm Width)
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Voltage - Supply: 10V ~ 20V
Input Type: Non-Inverting
High Side Voltage - Max (Bootstrap): 600 V
Supplier Device Package: 20-SOIC
Rise / Fall Time (Typ): 25ns, 15ns
Channel Type: Independent
Driven Configuration: Half-Bridge
Number of Drivers: 2
Gate Type: IGBT, N-Channel MOSFET
Logic Voltage - VIL, VIH: 0.8V, 3.5V
Current - Peak Output (Source, Sink): 500mA, 500mA
DigiKey Programmable: Not Verified
товару немає в наявності
В кошику
од. на суму грн.
| IRS21962STRPBF |
|
Виробник: Infineon Technologies
Description: IC GATE DRVR HIGH-SIDE 16SOIC
Packaging: Tape & Reel (TR)
Package / Case: 16-SOIC (0.154", 3.90mm Width)
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Voltage - Supply: 10V ~ 20V
Input Type: Non-Inverting
High Side Voltage - Max (Bootstrap): 600 V
Supplier Device Package: 16-SOIC
Rise / Fall Time (Typ): 25ns, 25ns
Channel Type: Independent
Driven Configuration: High-Side
Number of Drivers: 2
Gate Type: IGBT, N-Channel MOSFET
Logic Voltage - VIL, VIH: 0.6V, 3.5V
Current - Peak Output (Source, Sink): 500mA, 500mA
DigiKey Programmable: Not Verified
Description: IC GATE DRVR HIGH-SIDE 16SOIC
Packaging: Tape & Reel (TR)
Package / Case: 16-SOIC (0.154", 3.90mm Width)
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Voltage - Supply: 10V ~ 20V
Input Type: Non-Inverting
High Side Voltage - Max (Bootstrap): 600 V
Supplier Device Package: 16-SOIC
Rise / Fall Time (Typ): 25ns, 25ns
Channel Type: Independent
Driven Configuration: High-Side
Number of Drivers: 2
Gate Type: IGBT, N-Channel MOSFET
Logic Voltage - VIL, VIH: 0.6V, 3.5V
Current - Peak Output (Source, Sink): 500mA, 500mA
DigiKey Programmable: Not Verified
товару немає в наявності
В кошику
од. на суму грн.
| IRS2330STRPBF |
|
Виробник: Infineon Technologies
Description: IC GATE DRVR HALF-BRIDGE 28SOIC
Packaging: Tape & Reel (TR)
Package / Case: 28-SOIC (0.295", 7.50mm Width)
Mounting Type: Surface Mount
Operating Temperature: -40°C ~ 150°C (TJ)
Voltage - Supply: 10V ~ 20V
Input Type: Inverting
High Side Voltage - Max (Bootstrap): 600 V
Supplier Device Package: 28-SOIC
Rise / Fall Time (Typ): 80ns, 35ns
Channel Type: 3-Phase
Driven Configuration: Half-Bridge
Number of Drivers: 6
Gate Type: IGBT, MOSFET (N-Channel)
Logic Voltage - VIL, VIH: 0.8V, 2.2V
Current - Peak Output (Source, Sink): 250mA, 500mA
Part Status: Obsolete
DigiKey Programmable: Not Verified
Description: IC GATE DRVR HALF-BRIDGE 28SOIC
Packaging: Tape & Reel (TR)
Package / Case: 28-SOIC (0.295", 7.50mm Width)
Mounting Type: Surface Mount
Operating Temperature: -40°C ~ 150°C (TJ)
Voltage - Supply: 10V ~ 20V
Input Type: Inverting
High Side Voltage - Max (Bootstrap): 600 V
Supplier Device Package: 28-SOIC
Rise / Fall Time (Typ): 80ns, 35ns
Channel Type: 3-Phase
Driven Configuration: Half-Bridge
Number of Drivers: 6
Gate Type: IGBT, MOSFET (N-Channel)
Logic Voltage - VIL, VIH: 0.8V, 2.2V
Current - Peak Output (Source, Sink): 250mA, 500mA
Part Status: Obsolete
DigiKey Programmable: Not Verified
товару немає в наявності
В кошику
од. на суму грн.
| IRS2332DJPBF |
|
Виробник: Infineon Technologies
Description: IC GATE DRVR HALF-BRIDGE 44PLCC
Packaging: Tube
Package / Case: 44-LCC (J-Lead), 32 Leads
Mounting Type: Surface Mount
Operating Temperature: -40°C ~ 150°C (TJ)
Voltage - Supply: 10V ~ 20V
Input Type: Inverting
High Side Voltage - Max (Bootstrap): 600 V
Supplier Device Package: 44-PLCC, 32 Leads (16.58x16.58)
Rise / Fall Time (Typ): 80ns, 35ns
Channel Type: 3-Phase
Driven Configuration: Half-Bridge
Number of Drivers: 6
Gate Type: IGBT, MOSFET (N-Channel)
Logic Voltage - VIL, VIH: 0.8V, 2.2V
Current - Peak Output (Source, Sink): 250mA, 500mA
Part Status: Obsolete
DigiKey Programmable: Not Verified
Description: IC GATE DRVR HALF-BRIDGE 44PLCC
Packaging: Tube
Package / Case: 44-LCC (J-Lead), 32 Leads
Mounting Type: Surface Mount
Operating Temperature: -40°C ~ 150°C (TJ)
Voltage - Supply: 10V ~ 20V
Input Type: Inverting
High Side Voltage - Max (Bootstrap): 600 V
Supplier Device Package: 44-PLCC, 32 Leads (16.58x16.58)
Rise / Fall Time (Typ): 80ns, 35ns
Channel Type: 3-Phase
Driven Configuration: Half-Bridge
Number of Drivers: 6
Gate Type: IGBT, MOSFET (N-Channel)
Logic Voltage - VIL, VIH: 0.8V, 2.2V
Current - Peak Output (Source, Sink): 250mA, 500mA
Part Status: Obsolete
DigiKey Programmable: Not Verified
товару немає в наявності
В кошику
од. на суму грн.
| IRS2332DSTRPBF |
|
Виробник: Infineon Technologies
Description: IC GATE DRVR HALF-BRIDGE 28SOIC
Packaging: Tape & Reel (TR)
Package / Case: 28-SOIC (0.295", 7.50mm Width)
Mounting Type: Surface Mount
Operating Temperature: -40°C ~ 150°C (TJ)
Voltage - Supply: 10V ~ 20V
Input Type: Inverting
High Side Voltage - Max (Bootstrap): 600 V
Supplier Device Package: 28-SOIC
Rise / Fall Time (Typ): 80ns, 35ns
Channel Type: 3-Phase
Driven Configuration: Half-Bridge
Number of Drivers: 6
Gate Type: IGBT, MOSFET (N-Channel)
Logic Voltage - VIL, VIH: 0.8V, 2.2V
Current - Peak Output (Source, Sink): 250mA, 500mA
Part Status: Obsolete
DigiKey Programmable: Not Verified
Description: IC GATE DRVR HALF-BRIDGE 28SOIC
Packaging: Tape & Reel (TR)
Package / Case: 28-SOIC (0.295", 7.50mm Width)
Mounting Type: Surface Mount
Operating Temperature: -40°C ~ 150°C (TJ)
Voltage - Supply: 10V ~ 20V
Input Type: Inverting
High Side Voltage - Max (Bootstrap): 600 V
Supplier Device Package: 28-SOIC
Rise / Fall Time (Typ): 80ns, 35ns
Channel Type: 3-Phase
Driven Configuration: Half-Bridge
Number of Drivers: 6
Gate Type: IGBT, MOSFET (N-Channel)
Logic Voltage - VIL, VIH: 0.8V, 2.2V
Current - Peak Output (Source, Sink): 250mA, 500mA
Part Status: Obsolete
DigiKey Programmable: Not Verified
товару немає в наявності
В кошику
од. на суму грн.
| IRS2332STRPBF |
|
Виробник: Infineon Technologies
Description: IC GATE DRVR HALF-BRIDGE 28SOIC
Packaging: Tape & Reel (TR)
Package / Case: 28-SOIC (0.295", 7.50mm Width)
Mounting Type: Surface Mount
Operating Temperature: -40°C ~ 150°C (TJ)
Voltage - Supply: 10V ~ 20V
Input Type: Inverting
High Side Voltage - Max (Bootstrap): 600 V
Supplier Device Package: 28-SOIC
Rise / Fall Time (Typ): 80ns, 35ns
Channel Type: 3-Phase
Driven Configuration: Half-Bridge
Number of Drivers: 6
Gate Type: IGBT, MOSFET (N-Channel)
Logic Voltage - VIL, VIH: 0.8V, 2.2V
Current - Peak Output (Source, Sink): 250mA, 500mA
Part Status: Obsolete
DigiKey Programmable: Not Verified
Description: IC GATE DRVR HALF-BRIDGE 28SOIC
Packaging: Tape & Reel (TR)
Package / Case: 28-SOIC (0.295", 7.50mm Width)
Mounting Type: Surface Mount
Operating Temperature: -40°C ~ 150°C (TJ)
Voltage - Supply: 10V ~ 20V
Input Type: Inverting
High Side Voltage - Max (Bootstrap): 600 V
Supplier Device Package: 28-SOIC
Rise / Fall Time (Typ): 80ns, 35ns
Channel Type: 3-Phase
Driven Configuration: Half-Bridge
Number of Drivers: 6
Gate Type: IGBT, MOSFET (N-Channel)
Logic Voltage - VIL, VIH: 0.8V, 2.2V
Current - Peak Output (Source, Sink): 250mA, 500mA
Part Status: Obsolete
DigiKey Programmable: Not Verified
товару немає в наявності
В кошику
од. на суму грн.
| IRS26072DSTRPBF |
|
Виробник: Infineon Technologies
Description: IC GATE DRVR HALF-BRIDGE 8SOIC
Packaging: Tape & Reel (TR)
Package / Case: 8-SOIC (0.154", 3.90mm Width)
Mounting Type: Surface Mount
Operating Temperature: -40°C ~ 150°C (TJ)
Voltage - Supply: 10V ~ 20V
Input Type: Non-Inverting
High Side Voltage - Max (Bootstrap): 600 V
Supplier Device Package: 8-SOIC
Rise / Fall Time (Typ): 150ns, 50ns
Channel Type: Independent
Driven Configuration: Half-Bridge
Number of Drivers: 2
Gate Type: IGBT, MOSFET (N-Channel)
Logic Voltage - VIL, VIH: 0.8V, 2.5V
Current - Peak Output (Source, Sink): 200mA, 350mA
Part Status: Obsolete
DigiKey Programmable: Not Verified
Description: IC GATE DRVR HALF-BRIDGE 8SOIC
Packaging: Tape & Reel (TR)
Package / Case: 8-SOIC (0.154", 3.90mm Width)
Mounting Type: Surface Mount
Operating Temperature: -40°C ~ 150°C (TJ)
Voltage - Supply: 10V ~ 20V
Input Type: Non-Inverting
High Side Voltage - Max (Bootstrap): 600 V
Supplier Device Package: 8-SOIC
Rise / Fall Time (Typ): 150ns, 50ns
Channel Type: Independent
Driven Configuration: Half-Bridge
Number of Drivers: 2
Gate Type: IGBT, MOSFET (N-Channel)
Logic Voltage - VIL, VIH: 0.8V, 2.5V
Current - Peak Output (Source, Sink): 200mA, 350mA
Part Status: Obsolete
DigiKey Programmable: Not Verified
товару немає в наявності
В кошику
од. на суму грн.
| IRS4427STRPBF |
|
Виробник: Infineon Technologies
Description: IC GATE DRVR LOW-SIDE 8SOIC
Packaging: Tape & Reel (TR)
Package / Case: 8-SOIC (0.154", 3.90mm Width)
Mounting Type: Surface Mount
Operating Temperature: -40°C ~ 150°C (TJ)
Voltage - Supply: 6V ~ 20V
Input Type: Non-Inverting
Supplier Device Package: 8-SOIC
Rise / Fall Time (Typ): 25ns, 25ns
Channel Type: Independent
Driven Configuration: Low-Side
Number of Drivers: 2
Gate Type: IGBT, MOSFET (N-Channel)
Logic Voltage - VIL, VIH: 0.8V, 2.5V
Current - Peak Output (Source, Sink): 2.3A, 3.3A
Part Status: Active
DigiKey Programmable: Not Verified
Description: IC GATE DRVR LOW-SIDE 8SOIC
Packaging: Tape & Reel (TR)
Package / Case: 8-SOIC (0.154", 3.90mm Width)
Mounting Type: Surface Mount
Operating Temperature: -40°C ~ 150°C (TJ)
Voltage - Supply: 6V ~ 20V
Input Type: Non-Inverting
Supplier Device Package: 8-SOIC
Rise / Fall Time (Typ): 25ns, 25ns
Channel Type: Independent
Driven Configuration: Low-Side
Number of Drivers: 2
Gate Type: IGBT, MOSFET (N-Channel)
Logic Voltage - VIL, VIH: 0.8V, 2.5V
Current - Peak Output (Source, Sink): 2.3A, 3.3A
Part Status: Active
DigiKey Programmable: Not Verified
на замовлення 5000 шт:
термін постачання 21-31 дні (днів)
| Кількість | Ціна без ПДВ |
|---|---|
| 2500+ | 40.37 грн |
| 5000+ | 37.95 грн |
| IRU3037ACSTR |
|
Виробник: Infineon Technologies
Description: IC REG CTRLR BUCK/BOOST 8SOIC
Packaging: Tape & Reel (TR)
Package / Case: 8-SOIC (0.154", 3.90mm Width)
Output Type: Transistor Driver
Mounting Type: Surface Mount
Function: Step-Up, Step-Down
Operating Temperature: 0°C ~ 70°C (TA)
Output Configuration: Positive
Frequency - Switching: 400kHz
Topology: Buck, Boost
Voltage - Supply (Vcc/Vdd): 4.2V ~ 25V
Supplier Device Package: 8-SOIC
Synchronous Rectifier: Yes
Control Features: Enable, Soft Start
Output Phases: 1
Duty Cycle (Max): 90%
Clock Sync: No
Part Status: Obsolete
Number of Outputs: 1
Description: IC REG CTRLR BUCK/BOOST 8SOIC
Packaging: Tape & Reel (TR)
Package / Case: 8-SOIC (0.154", 3.90mm Width)
Output Type: Transistor Driver
Mounting Type: Surface Mount
Function: Step-Up, Step-Down
Operating Temperature: 0°C ~ 70°C (TA)
Output Configuration: Positive
Frequency - Switching: 400kHz
Topology: Buck, Boost
Voltage - Supply (Vcc/Vdd): 4.2V ~ 25V
Supplier Device Package: 8-SOIC
Synchronous Rectifier: Yes
Control Features: Enable, Soft Start
Output Phases: 1
Duty Cycle (Max): 90%
Clock Sync: No
Part Status: Obsolete
Number of Outputs: 1
товару немає в наявності
Мінімальне замовлення: 2500 шт
В кошику
од. на суму грн.
| IPB60R190C6ATMA1 |
|
Виробник: Infineon Technologies
Description: MOSFET N-CH 600V 20.2A D2PAK
Packaging: Cut Tape (CT)
Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 20.2A (Tc)
Rds On (Max) @ Id, Vgs: 190mOhm @ 9.5A, 10V
Power Dissipation (Max): 151W (Tc)
Vgs(th) (Max) @ Id: 3.5V @ 630µA
Supplier Device Package: PG-TO263-3
Part Status: Not For New Designs
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 600 V
Gate Charge (Qg) (Max) @ Vgs: 63 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 1400 pF @ 100 V
Description: MOSFET N-CH 600V 20.2A D2PAK
Packaging: Cut Tape (CT)
Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 20.2A (Tc)
Rds On (Max) @ Id, Vgs: 190mOhm @ 9.5A, 10V
Power Dissipation (Max): 151W (Tc)
Vgs(th) (Max) @ Id: 3.5V @ 630µA
Supplier Device Package: PG-TO263-3
Part Status: Not For New Designs
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 600 V
Gate Charge (Qg) (Max) @ Vgs: 63 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 1400 pF @ 100 V
на замовлення 9450 шт:
термін постачання 21-31 дні (днів)
| Кількість | Ціна без ПДВ |
|---|---|
| 2+ | 300.52 грн |
| 10+ | 189.82 грн |
| 50+ | 146.88 грн |
| 100+ | 124.87 грн |
| 500+ | 97.74 грн |
| CY14B101KA-ZS45XI |
|
Виробник: Infineon Technologies
Description: IC NVSRAM 1MBIT PAR 44TSOP II
Packaging: Tray
Package / Case: 44-TSOP (0.400", 10.16mm Width)
Mounting Type: Surface Mount
Memory Size: 1Mbit
Memory Type: Non-Volatile
Operating Temperature: -40°C ~ 85°C (TA)
Voltage - Supply: 2.7V ~ 3.6V
Technology: NVSRAM (Non-Volatile SRAM)
Memory Format: NVSRAM
Supplier Device Package: 44-TSOP II
Part Status: Active
Write Cycle Time - Word, Page: 45ns
Memory Interface: Parallel
Access Time: 45 ns
Memory Organization: 128K x 8
DigiKey Programmable: Not Verified
Description: IC NVSRAM 1MBIT PAR 44TSOP II
Packaging: Tray
Package / Case: 44-TSOP (0.400", 10.16mm Width)
Mounting Type: Surface Mount
Memory Size: 1Mbit
Memory Type: Non-Volatile
Operating Temperature: -40°C ~ 85°C (TA)
Voltage - Supply: 2.7V ~ 3.6V
Technology: NVSRAM (Non-Volatile SRAM)
Memory Format: NVSRAM
Supplier Device Package: 44-TSOP II
Part Status: Active
Write Cycle Time - Word, Page: 45ns
Memory Interface: Parallel
Access Time: 45 ns
Memory Organization: 128K x 8
DigiKey Programmable: Not Verified
на замовлення 100 шт:
термін постачання 21-31 дні (днів)
| Кількість | Ціна без ПДВ |
|---|---|
| 1+ | 2552.44 грн |
| 10+ | 2310.99 грн |
| 25+ | 2230.79 грн |
| 40+ | 2027.31 грн |
| CY14B101LA-SP25XI |
|
Виробник: Infineon Technologies
Description: IC NVSRAM 1MBIT PARALLEL 48SSOP
Packaging: Tube
Package / Case: 48-BSSOP (0.295", 7.50mm Width)
Mounting Type: Surface Mount
Memory Size: 1Mbit
Memory Type: Non-Volatile
Operating Temperature: -40°C ~ 85°C (TA)
Voltage - Supply: 2.7V ~ 3.6V
Technology: NVSRAM (Non-Volatile SRAM)
Memory Format: NVSRAM
Supplier Device Package: 48-SSOP
Write Cycle Time - Word, Page: 25ns
Memory Interface: Parallel
Access Time: 25 ns
Memory Organization: 128K x 8
DigiKey Programmable: Not Verified
Description: IC NVSRAM 1MBIT PARALLEL 48SSOP
Packaging: Tube
Package / Case: 48-BSSOP (0.295", 7.50mm Width)
Mounting Type: Surface Mount
Memory Size: 1Mbit
Memory Type: Non-Volatile
Operating Temperature: -40°C ~ 85°C (TA)
Voltage - Supply: 2.7V ~ 3.6V
Technology: NVSRAM (Non-Volatile SRAM)
Memory Format: NVSRAM
Supplier Device Package: 48-SSOP
Write Cycle Time - Word, Page: 25ns
Memory Interface: Parallel
Access Time: 25 ns
Memory Organization: 128K x 8
DigiKey Programmable: Not Verified
на замовлення 144 шт:
термін постачання 21-31 дні (днів)
| Кількість | Ціна без ПДВ |
|---|---|
| 1+ | 3671.26 грн |
| 10+ | 3267.96 грн |
| 30+ | 3141.90 грн |
| 60+ | 2874.91 грн |
| 120+ | 2802.39 грн |