Продукція > INFINEON TECHNOLOGIES > Всі товари виробника INFINEON TECHNOLOGIES (123028) > Сторінка 169 з 2051
| Фото | Назва | Виробник | Інформація | Доступність | Ціна без ПДВ | ||||||||||||
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62-0203PBF | Infineon Technologies |
Description: MOSFET P-CH 12V 16A 8SOPackaging: Tube Package / Case: 8-SOIC (0.154", 3.90mm Width) Mounting Type: Surface Mount Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: P-Channel Current - Continuous Drain (Id) @ 25°C: 16A (Ta) Rds On (Max) @ Id, Vgs: 7mOhm @ 16A, 4.5V Power Dissipation (Max): 2.5W (Ta) Vgs(th) (Max) @ Id: 900mV @ 250µA Supplier Device Package: 8-SO Part Status: Obsolete Drive Voltage (Max Rds On, Min Rds On): 1.8V, 4.5V Vgs (Max): ±8V Drain to Source Voltage (Vdss): 12 V Gate Charge (Qg) (Max) @ Vgs: 91 nC @ 4.5 V Input Capacitance (Ciss) (Max) @ Vds: 8676 pF @ 10 V |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||||||
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IRF8113GPBF | Infineon Technologies |
Description: MOSFET N-CH 30V 17.2A 8SOPackaging: Tube Package / Case: 8-SOIC (0.154", 3.90mm Width) Mounting Type: Surface Mount Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 17.2A (Ta) Rds On (Max) @ Id, Vgs: 5.6mOhm @ 17.2A, 10V Power Dissipation (Max): 2.5W (Ta) Vgs(th) (Max) @ Id: 2.2V @ 250µA Supplier Device Package: 8-SO Part Status: Obsolete Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 30 V Gate Charge (Qg) (Max) @ Vgs: 36 nC @ 4.5 V Input Capacitance (Ciss) (Max) @ Vds: 2910 pF @ 15 V |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||||||
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IRF8252PBF | Infineon Technologies |
Description: MOSFET N-CH 25V 25A 8SOPackaging: Tube Package / Case: 8-SOIC (0.154", 3.90mm Width) Mounting Type: Surface Mount Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 25A (Ta) Rds On (Max) @ Id, Vgs: 2.7mOhm @ 25A, 10V Power Dissipation (Max): 2.5W (Ta) Vgs(th) (Max) @ Id: 2.35V @ 100µA Supplier Device Package: 8-SO Part Status: Obsolete Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 25 V Gate Charge (Qg) (Max) @ Vgs: 53 nC @ 4.5 V Input Capacitance (Ciss) (Max) @ Vds: 5305 pF @ 13 V |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||||||
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IRF8788PBF | Infineon Technologies |
Description: MOSFET N-CH 30V 24A 8SOPackaging: Tube Package / Case: 8-SOIC (0.154", 3.90mm Width) Mounting Type: Surface Mount Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 24A (Ta) Rds On (Max) @ Id, Vgs: 2.8mOhm @ 24A, 10V Power Dissipation (Max): 2.5W (Ta) Vgs(th) (Max) @ Id: 2.35V @ 100µA Supplier Device Package: 8-SO Part Status: Discontinued at Digi-Key Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 30 V Gate Charge (Qg) (Max) @ Vgs: 66 nC @ 4.5 V Input Capacitance (Ciss) (Max) @ Vds: 5720 pF @ 15 V |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||||||
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IRF8910GPBF | Infineon Technologies |
Description: MOSFET 2N-CH 20V 10A 8SOPackaging: Tube Package / Case: 8-SOIC (0.154", 3.90mm Width) Mounting Type: Surface Mount Configuration: 2 N-Channel (Dual) Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) Power - Max: 2W Drain to Source Voltage (Vdss): 20V Current - Continuous Drain (Id) @ 25°C: 10A Input Capacitance (Ciss) (Max) @ Vds: 960pF @ 10V Rds On (Max) @ Id, Vgs: 13.4mOhm @ 10A, 10V Gate Charge (Qg) (Max) @ Vgs: 11nC @ 4.5V FET Feature: Logic Level Gate Vgs(th) (Max) @ Id: 2.55V @ 250µA Supplier Device Package: 8-SO Part Status: Obsolete |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||||||
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IRFH7911TRPBF | Infineon Technologies |
Description: MOSFET 2N-CH 30V 13A/28A PQFNPackaging: Tape & Reel (TR) Package / Case: 18-PowerVQFN Mounting Type: Surface Mount Configuration: 2 N-Channel (Dual) Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) Power - Max: 2.4W, 3.4W Drain to Source Voltage (Vdss): 30V Current - Continuous Drain (Id) @ 25°C: 13A, 28A Input Capacitance (Ciss) (Max) @ Vds: 1060pF @ 15V Rds On (Max) @ Id, Vgs: 8.6mOhm @ 12A, 10V Gate Charge (Qg) (Max) @ Vgs: 12nC @ 4.5V FET Feature: Logic Level Gate Vgs(th) (Max) @ Id: 2.35V @ 25µA Supplier Device Package: PQFN (5x6) |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||||||
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IRFR1018ETRRPBF | Infineon Technologies |
Description: MOSFET N-CH 60V 56A DPAKPackaging: Tape & Reel (TR) Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63 Mounting Type: Surface Mount Operating Temperature: -55°C ~ 175°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 56A (Tc) Rds On (Max) @ Id, Vgs: 8.4mOhm @ 47A, 10V Power Dissipation (Max): 110W (Tc) Vgs(th) (Max) @ Id: 4V @ 100µA Supplier Device Package: TO-252AA (DPAK) Drive Voltage (Max Rds On, Min Rds On): 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 60 V Gate Charge (Qg) (Max) @ Vgs: 69 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 2290 pF @ 50 V |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||||||
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IRFR3410TRRPBF | Infineon Technologies |
Description: MOSFET N-CH 100V 31A DPAKPackaging: Tape & Reel (TR) Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63 Mounting Type: Surface Mount Operating Temperature: -55°C ~ 175°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 31A (Tc) Rds On (Max) @ Id, Vgs: 39mOhm @ 18A, 10V Power Dissipation (Max): 3W (Ta), 110W (Tc) Vgs(th) (Max) @ Id: 4V @ 250µA Supplier Device Package: TO-252AA (DPAK) Part Status: Obsolete Drive Voltage (Max Rds On, Min Rds On): 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 100 V Gate Charge (Qg) (Max) @ Vgs: 56 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 1690 pF @ 25 V |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||||||
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IRFS4229TRLPBF | Infineon Technologies |
Description: MOSFET N-CH 250V 45A D2PAKPackaging: Tape & Reel (TR) Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB Mounting Type: Surface Mount Operating Temperature: -40°C ~ 175°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 45A (Tc) Rds On (Max) @ Id, Vgs: 48mOhm @ 26A, 10V Power Dissipation (Max): 330W (Tc) Vgs(th) (Max) @ Id: 5V @ 250µA Supplier Device Package: PG-TO263-3 Part Status: Active Drive Voltage (Max Rds On, Min Rds On): 10V Vgs (Max): ±30V Drain to Source Voltage (Vdss): 250 V Gate Charge (Qg) (Max) @ Vgs: 110 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 4560 pF @ 25 V |
на замовлення 1600 шт: термін постачання 21-31 дні (днів) |
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IRLR8726PBF | Infineon Technologies |
Description: MOSFET N-CH 30V 86A DPAKPackaging: Tube Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63 Mounting Type: Surface Mount Operating Temperature: -55°C ~ 175°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 86A (Tc) Rds On (Max) @ Id, Vgs: 5.8mOhm @ 25A, 10V Power Dissipation (Max): 75W (Tc) Vgs(th) (Max) @ Id: 2.35V @ 50µA Supplier Device Package: TO-252AA (DPAK) Part Status: Discontinued at Digi-Key Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 30 V Gate Charge (Qg) (Max) @ Vgs: 23 nC @ 4.5 V Input Capacitance (Ciss) (Max) @ Vds: 2150 pF @ 15 V |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||||||
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IRLR8726TRLPBF | Infineon Technologies |
Description: MOSFET N-CH 30V 86A DPAKPackaging: Tape & Reel (TR) Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63 Mounting Type: Surface Mount Operating Temperature: -55°C ~ 175°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 86A (Tc) Rds On (Max) @ Id, Vgs: 5.8mOhm @ 25A, 10V Power Dissipation (Max): 75W (Tc) Vgs(th) (Max) @ Id: 2.35V @ 50µA Supplier Device Package: TO-252AA (DPAK) Part Status: Not For New Designs Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 30 V Gate Charge (Qg) (Max) @ Vgs: 23 nC @ 4.5 V Input Capacitance (Ciss) (Max) @ Vds: 2150 pF @ 15 V |
товару немає в наявності |
Мінімальне замовлення: 3000 шт В кошику од. на суму грн. | ||||||||||||
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IRLR8729PBF | Infineon Technologies |
Description: MOSFET N-CH 30V 58A D-PAKPackaging: Tube Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63 Mounting Type: Surface Mount Operating Temperature: -55°C ~ 175°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 58A (Tc) Rds On (Max) @ Id, Vgs: 8.9mOhm @ 25A, 10V Power Dissipation (Max): 55W (Tc) Vgs(th) (Max) @ Id: 2.35V @ 25µA Supplier Device Package: TO-252AA (DPAK) Part Status: Discontinued at Digi-Key Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 30 V Gate Charge (Qg) (Max) @ Vgs: 16 nC @ 4.5 V Input Capacitance (Ciss) (Max) @ Vds: 1350 pF @ 15 V |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||||||
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IRLR8729TRLPBF | Infineon Technologies |
Description: MOSFET N-CH 30V 58A D-PAKPackaging: Tape & Reel (TR) Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63 Mounting Type: Surface Mount Operating Temperature: -55°C ~ 175°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 58A (Tc) Rds On (Max) @ Id, Vgs: 8.9mOhm @ 25A, 10V Power Dissipation (Max): 55W (Tc) Vgs(th) (Max) @ Id: 2.35V @ 25µA Supplier Device Package: TO-252AA (DPAK) Part Status: Obsolete Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 30 V Gate Charge (Qg) (Max) @ Vgs: 16 nC @ 4.5 V Input Capacitance (Ciss) (Max) @ Vds: 1350 pF @ 15 V |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||||||
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IRLS3036TRRPBF | Infineon Technologies |
Description: MOSFET N-CH 60V 195A D2PAKPackaging: Tape & Reel (TR) Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB Mounting Type: Surface Mount Operating Temperature: -55°C ~ 175°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 195A (Tc) Rds On (Max) @ Id, Vgs: 2.4mOhm @ 165A, 10V Power Dissipation (Max): 380W (Tc) Vgs(th) (Max) @ Id: 2.5V @ 250µA Supplier Device Package: D2PAK Part Status: Obsolete Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Vgs (Max): ±16V Drain to Source Voltage (Vdss): 60 V Gate Charge (Qg) (Max) @ Vgs: 140 nC @ 4.5 V Input Capacitance (Ciss) (Max) @ Vds: 11210 pF @ 50 V |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||||||
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IRLU8256PBF | Infineon Technologies |
Description: MOSFET N-CH 25V 81A IPAKPackaging: Tube Package / Case: TO-251-3 Short Leads, IPak, TO-251AA Mounting Type: Through Hole Operating Temperature: -55°C ~ 175°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 81A (Tc) Rds On (Max) @ Id, Vgs: 5.7mOhm @ 25A, 10V Power Dissipation (Max): 63W (Tc) Vgs(th) (Max) @ Id: 2.35V @ 25µA Supplier Device Package: IPAK Part Status: Obsolete Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 25 V Gate Charge (Qg) (Max) @ Vgs: 15 nC @ 4.5 V Input Capacitance (Ciss) (Max) @ Vds: 1470 pF @ 13 V |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||||||
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IRLU8259PBF | Infineon Technologies |
Description: MOSFET N-CH 25V 57A IPAKPackaging: Tube Package / Case: TO-251-3 Short Leads, IPak, TO-251AA Mounting Type: Through Hole Operating Temperature: -55°C ~ 175°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 57A (Tc) Rds On (Max) @ Id, Vgs: 8.7mOhm @ 21A, 10V Power Dissipation (Max): 48W (Tc) Vgs(th) (Max) @ Id: 2.35V @ 25µA Supplier Device Package: IPAK Part Status: Obsolete Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 25 V Gate Charge (Qg) (Max) @ Vgs: 10 nC @ 4.5 V Input Capacitance (Ciss) (Max) @ Vds: 900 pF @ 13 V Voltage Coupled to Gate Charge (Qg) (Max) @ Vgs: 4.5 Voltage Coupled to Input Capacitance (Ciss) (Max) @ Vds: 13 |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||||||
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IRMCF343TY | Infineon Technologies |
Description: IC MOTOR DRIVER 64MQFP |
товару немає в наявності |
Мінімальне замовлення: 1600 шт В кошику од. на суму грн. | ||||||||||||
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IRMCF371TY | Infineon Technologies |
Description: IC MTRDRV 1.62-1.98/3-3.6V 48QFPInterface: I²C, RS-232, SPI Function: Controller - Commutation, Direction Management Mounting Type: Surface Mount Package / Case: 48-LQFP Packaging: Tray Motor Type - AC, DC: AC, Synchronous Supplier Device Package: 48-QFP (7x7) Technology: IGBT Applications: Appliance Voltage - Supply: 1.62V ~ 1.98V, 3V ~ 3.6V Output Configuration: Pre-Driver - Half Bridge (3) Operating Temperature: -40°C ~ 85°C (TA) |
товару немає в наявності |
Мінімальне замовлення: 1500 шт В кошику од. на суму грн. | ||||||||||||
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IRMCK371TY | Infineon Technologies |
Description: IC MTRDRV 1.62-1.98/3-3.6V 48QFPMotor Type - AC, DC: AC, Synchronous Supplier Device Package: 48-QFP (7x7) Technology: IGBT Applications: Appliance Voltage - Supply: 1.62V ~ 1.98V, 3V ~ 3.6V Output Configuration: Pre-Driver - Half Bridge (3) Operating Temperature: -40°C ~ 85°C (TA) Interface: I2C, RS-232, SPI Function: Controller - Commutation, Direction Management Mounting Type: Surface Mount Package / Case: 48-LQFP Packaging: Tray |
товару немає в наявності |
Мінімальне замовлення: 1500 шт В кошику од. на суму грн. | ||||||||||||
| IRPP3637-06A | Infineon Technologies |
Description: BOARD REF DESIGN POWIR+Part Status: Obsolete Outputs and Type: 1, Non-Isolated Main Purpose: DC/DC, Step Down Supplied Contents: Board(s) Utilized IC / Part: IR3637, IRF8910 Board Type: Fully Populated Regulator Topology: Buck Frequency - Switching: 600kHz Current - Output: 6A Voltage - Input: 4.5V ~ 5.5V Voltage - Output: 1.25V Packaging: Tube |
товару немає в наявності |
В кошику од. на суму грн. | |||||||||||||
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IRS2093MTRPBF | Infineon Technologies |
Description: IC AMP CLASS D QUAD 48MLPQPackaging: Tape & Reel (TR) Part Status: Active Supplier Device Package: PG-VQFN-48 Voltage - Supply: 10V ~ 15V Operating Temperature: -40°C ~ 125°C (TA) Type: Class D Mounting Type: Surface Mount Output Type: 4-Channel (Quad) Package / Case: 48-VFQFN Exposed Pad Features: Depop, Short-Circuit Protection, Shutdown |
товару немає в наявності |
Мінімальне замовлення: 3000 шт В кошику од. на суму грн. | ||||||||||||
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IRS210614STRPBF | Infineon Technologies |
Description: IC GATE DRVR HALF-BRIDGE 14SOICPackaging: Tape & Reel (TR) Package / Case: 14-SOIC (0.154", 3.90mm Width) Mounting Type: Surface Mount Operating Temperature: -40°C ~ 150°C (TJ) Voltage - Supply: 10V ~ 20V Input Type: Non-Inverting High Side Voltage - Max (Bootstrap): 600 V Supplier Device Package: 14-SOIC Rise / Fall Time (Typ): 100ns, 35ns Channel Type: Independent Driven Configuration: Half-Bridge Number of Drivers: 2 Gate Type: IGBT, MOSFET (N-Channel) Logic Voltage - VIL, VIH: 0.8V, 2.5V Current - Peak Output (Source, Sink): 290mA, 600mA DigiKey Programmable: Not Verified |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||||||
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IRS2123SPBF | Infineon Technologies |
Description: IC GATE DRVR HIGH-SIDE 8SOICPackaging: Tube Package / Case: 8-SOIC (0.154", 3.90mm Width) Mounting Type: Surface Mount Operating Temperature: -40°C ~ 150°C (TJ) Voltage - Supply: 10V ~ 20V Input Type: Non-Inverting High Side Voltage - Max (Bootstrap): 600 V Supplier Device Package: 8-SOIC Rise / Fall Time (Typ): 80ns, 80ns Channel Type: Single Driven Configuration: High-Side Number of Drivers: 1 Gate Type: IGBT, N-Channel MOSFET Current - Peak Output (Source, Sink): 500mA, 500mA Part Status: Obsolete DigiKey Programmable: Not Verified |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||||||
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IRS21571DSTRPBF | Infineon Technologies |
Description: IC BALLAST CNTRL 48.3KHZ 16SOICPackaging: Tape & Reel (TR) Package / Case: 16-SOIC (0.154", 3.90mm Width) Mounting Type: Surface Mount Frequency: 43.7kHz ~ 48.3kHz Type: Ballast Controller Operating Temperature: -40°C ~ 125°C Voltage - Supply: 11.5V ~ 15.6V Supplier Device Package: 16-SOIC Current - Supply: 10 mA |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||||||
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IRS21850STRPBF | Infineon Technologies |
Description: IC GATE DRVR HIGH-SIDE 8SOICPackaging: Tape & Reel (TR) Package / Case: 8-SOIC (0.154", 3.90mm Width) Mounting Type: Surface Mount Operating Temperature: -55°C ~ 150°C (TJ) Voltage - Supply: 10V ~ 20V Input Type: Non-Inverting High Side Voltage - Max (Bootstrap): 600 V Supplier Device Package: 8-SOIC Rise / Fall Time (Typ): 15ns, 15ns Channel Type: Single Driven Configuration: High-Side Number of Drivers: 1 Gate Type: IGBT, MOSFET (N-Channel) Logic Voltage - VIL, VIH: 0.8V, 2.5V Current - Peak Output (Source, Sink): 4A, 4A Part Status: Obsolete DigiKey Programmable: Not Verified |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||||||
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IRS21856STRPBF | Infineon Technologies |
Description: IC GATE DRVR HALF-BRIDGE 14SOICPackaging: Tape & Reel (TR) Package / Case: 14-SOIC (0.154", 3.90mm Width) Mounting Type: Surface Mount Operating Temperature: -55°C ~ 150°C (TJ) Voltage - Supply: 10V ~ 20V Input Type: Non-Inverting High Side Voltage - Max (Bootstrap): 600 V Supplier Device Package: 14-SOIC Rise / Fall Time (Typ): 30ns, 20ns Channel Type: Independent Driven Configuration: Half-Bridge Number of Drivers: 2 Gate Type: IGBT, MOSFET (N-Channel) Logic Voltage - VIL, VIH: 0.8V, 3.5V Current - Peak Output (Source, Sink): 500mA, 500mA DigiKey Programmable: Not Verified |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||||||
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IRS21858STRPBF | Infineon Technologies |
Description: IC GATE DRVR HIGH-SIDE 16SOICPackaging: Tape & Reel (TR) Package / Case: 16-SOIC (0.154", 3.90mm Width) Mounting Type: Surface Mount Operating Temperature: -55°C ~ 150°C (TJ) Voltage - Supply: 10V ~ 20V Input Type: Non-Inverting High Side Voltage - Max (Bootstrap): 600 V Supplier Device Package: 16-SOIC Rise / Fall Time (Typ): 60ns, 20ns Channel Type: Independent Driven Configuration: High-Side Number of Drivers: 2 Gate Type: IGBT, N-Channel MOSFET Logic Voltage - VIL, VIH: 0.8V, 3.5V Current - Peak Output (Source, Sink): 290mA, 600mA DigiKey Programmable: Not Verified |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||||||
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IRS21956STRPBF | Infineon Technologies |
Description: IC GATE DRVR HALF-BRIDGE 20SOICPackaging: Tape & Reel (TR) Package / Case: 20-SOIC (0.295", 7.50mm Width) Mounting Type: Surface Mount Operating Temperature: -55°C ~ 150°C (TJ) Voltage - Supply: 10V ~ 20V Input Type: Non-Inverting High Side Voltage - Max (Bootstrap): 600 V Supplier Device Package: 20-SOIC Rise / Fall Time (Typ): 25ns, 15ns Channel Type: Independent Driven Configuration: Half-Bridge Number of Drivers: 2 Gate Type: IGBT, N-Channel MOSFET Logic Voltage - VIL, VIH: 0.8V, 3.5V Current - Peak Output (Source, Sink): 500mA, 500mA DigiKey Programmable: Not Verified |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||||||
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IRS21962STRPBF | Infineon Technologies |
Description: IC GATE DRVR HIGH-SIDE 16SOICPackaging: Tape & Reel (TR) Package / Case: 16-SOIC (0.154", 3.90mm Width) Mounting Type: Surface Mount Operating Temperature: -55°C ~ 150°C (TJ) Voltage - Supply: 10V ~ 20V Input Type: Non-Inverting High Side Voltage - Max (Bootstrap): 600 V Supplier Device Package: 16-SOIC Rise / Fall Time (Typ): 25ns, 25ns Channel Type: Independent Driven Configuration: High-Side Number of Drivers: 2 Gate Type: IGBT, N-Channel MOSFET Logic Voltage - VIL, VIH: 0.6V, 3.5V Current - Peak Output (Source, Sink): 500mA, 500mA DigiKey Programmable: Not Verified |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||||||
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IRS2330STRPBF | Infineon Technologies |
Description: IC GATE DRVR HALF-BRIDGE 28SOICPackaging: Tape & Reel (TR) Package / Case: 28-SOIC (0.295", 7.50mm Width) Mounting Type: Surface Mount Operating Temperature: -40°C ~ 150°C (TJ) Voltage - Supply: 10V ~ 20V Input Type: Inverting High Side Voltage - Max (Bootstrap): 600 V Supplier Device Package: 28-SOIC Rise / Fall Time (Typ): 80ns, 35ns Channel Type: 3-Phase Driven Configuration: Half-Bridge Number of Drivers: 6 Gate Type: IGBT, MOSFET (N-Channel) Logic Voltage - VIL, VIH: 0.8V, 2.2V Current - Peak Output (Source, Sink): 250mA, 500mA Part Status: Obsolete DigiKey Programmable: Not Verified |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||||||
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IRS2332DJPBF | Infineon Technologies |
Description: IC GATE DRVR HALF-BRIDGE 44PLCCPackaging: Tube Package / Case: 44-LCC (J-Lead), 32 Leads Mounting Type: Surface Mount Operating Temperature: -40°C ~ 150°C (TJ) Voltage - Supply: 10V ~ 20V Input Type: Inverting High Side Voltage - Max (Bootstrap): 600 V Supplier Device Package: 44-PLCC, 32 Leads (16.58x16.58) Rise / Fall Time (Typ): 80ns, 35ns Channel Type: 3-Phase Driven Configuration: Half-Bridge Number of Drivers: 6 Gate Type: IGBT, MOSFET (N-Channel) Logic Voltage - VIL, VIH: 0.8V, 2.2V Current - Peak Output (Source, Sink): 250mA, 500mA Part Status: Obsolete DigiKey Programmable: Not Verified |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||||||
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IRS2332DSTRPBF | Infineon Technologies |
Description: IC GATE DRVR HALF-BRIDGE 28SOICPackaging: Tape & Reel (TR) Package / Case: 28-SOIC (0.295", 7.50mm Width) Mounting Type: Surface Mount Operating Temperature: -40°C ~ 150°C (TJ) Voltage - Supply: 10V ~ 20V Input Type: Inverting High Side Voltage - Max (Bootstrap): 600 V Supplier Device Package: 28-SOIC Rise / Fall Time (Typ): 80ns, 35ns Channel Type: 3-Phase Driven Configuration: Half-Bridge Number of Drivers: 6 Gate Type: IGBT, MOSFET (N-Channel) Logic Voltage - VIL, VIH: 0.8V, 2.2V Current - Peak Output (Source, Sink): 250mA, 500mA Part Status: Obsolete DigiKey Programmable: Not Verified |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||||||
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IRS2332STRPBF | Infineon Technologies |
Description: IC GATE DRVR HALF-BRIDGE 28SOICPackaging: Tape & Reel (TR) Package / Case: 28-SOIC (0.295", 7.50mm Width) Mounting Type: Surface Mount Operating Temperature: -40°C ~ 150°C (TJ) Voltage - Supply: 10V ~ 20V Input Type: Inverting High Side Voltage - Max (Bootstrap): 600 V Supplier Device Package: 28-SOIC Rise / Fall Time (Typ): 80ns, 35ns Channel Type: 3-Phase Driven Configuration: Half-Bridge Number of Drivers: 6 Gate Type: IGBT, MOSFET (N-Channel) Logic Voltage - VIL, VIH: 0.8V, 2.2V Current - Peak Output (Source, Sink): 250mA, 500mA Part Status: Obsolete DigiKey Programmable: Not Verified |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||||||
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IRS26072DSTRPBF | Infineon Technologies |
Description: IC GATE DRVR HALF-BRIDGE 8SOICPackaging: Tape & Reel (TR) Package / Case: 8-SOIC (0.154", 3.90mm Width) Mounting Type: Surface Mount Operating Temperature: -40°C ~ 150°C (TJ) Voltage - Supply: 10V ~ 20V Input Type: Non-Inverting High Side Voltage - Max (Bootstrap): 600 V Supplier Device Package: 8-SOIC Rise / Fall Time (Typ): 150ns, 50ns Channel Type: Independent Driven Configuration: Half-Bridge Number of Drivers: 2 Gate Type: IGBT, MOSFET (N-Channel) Logic Voltage - VIL, VIH: 0.8V, 2.5V Current - Peak Output (Source, Sink): 200mA, 350mA Part Status: Obsolete DigiKey Programmable: Not Verified |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||||||
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IRS4427STRPBF | Infineon Technologies |
Description: IC GATE DRVR LOW-SIDE 8SOICPackaging: Tape & Reel (TR) Package / Case: 8-SOIC (0.154", 3.90mm Width) Mounting Type: Surface Mount Operating Temperature: -40°C ~ 150°C (TJ) Voltage - Supply: 6V ~ 20V Input Type: Non-Inverting Supplier Device Package: 8-SOIC Rise / Fall Time (Typ): 25ns, 25ns Channel Type: Independent Driven Configuration: Low-Side Number of Drivers: 2 Gate Type: IGBT, MOSFET (N-Channel) Logic Voltage - VIL, VIH: 0.8V, 2.5V Current - Peak Output (Source, Sink): 2.3A, 3.3A Part Status: Active DigiKey Programmable: Not Verified |
на замовлення 2350 шт: термін постачання 21-31 дні (днів) |
Мінімальне замовлення: 2350 шт В кошику од. на суму грн. | ||||||||||||
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IRU3037ACSTR | Infineon Technologies |
Description: IC REG CTRLR BUCK/BOOST 8SOICPackaging: Tape & Reel (TR) Package / Case: 8-SOIC (0.154", 3.90mm Width) Output Type: Transistor Driver Mounting Type: Surface Mount Function: Step-Up, Step-Down Operating Temperature: 0°C ~ 70°C (TA) Output Configuration: Positive Frequency - Switching: 400kHz Topology: Buck, Boost Voltage - Supply (Vcc/Vdd): 4.2V ~ 25V Supplier Device Package: 8-SOIC Synchronous Rectifier: Yes Control Features: Enable, Soft Start Output Phases: 1 Duty Cycle (Max): 90% Clock Sync: No Part Status: Obsolete Number of Outputs: 1 |
товару немає в наявності |
Мінімальне замовлення: 2500 шт В кошику од. на суму грн. | ||||||||||||
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IPB60R190C6ATMA1 | Infineon Technologies |
Description: MOSFET N-CH 600V 20.2A D2PAKPackaging: Cut Tape (CT) Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB Mounting Type: Surface Mount Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 20.2A (Tc) Rds On (Max) @ Id, Vgs: 190mOhm @ 9.5A, 10V Power Dissipation (Max): 151W (Tc) Vgs(th) (Max) @ Id: 3.5V @ 630µA Supplier Device Package: PG-TO263-3 Part Status: Not For New Designs Drive Voltage (Max Rds On, Min Rds On): 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 600 V Gate Charge (Qg) (Max) @ Vgs: 63 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 1400 pF @ 100 V |
на замовлення 1064 шт: термін постачання 21-31 дні (днів) |
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CY14B101KA-ZS45XI | Infineon Technologies |
Description: IC NVSRAM 1MBIT PAR 44TSOP IIPackaging: Tray Package / Case: 44-TSOP (0.400", 10.16mm Width) Mounting Type: Surface Mount Memory Size: 1Mbit Memory Type: Non-Volatile Operating Temperature: -40°C ~ 85°C (TA) Voltage - Supply: 2.7V ~ 3.6V Technology: NVSRAM (Non-Volatile SRAM) Memory Format: NVSRAM Supplier Device Package: 44-TSOP II Part Status: Active Write Cycle Time - Word, Page: 45ns Memory Interface: Parallel Access Time: 45 ns Memory Organization: 128K x 8 DigiKey Programmable: Not Verified |
на замовлення 100 шт: термін постачання 21-31 дні (днів) |
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CY14B101LA-SP25XI | Infineon Technologies |
Description: IC NVSRAM 1MBIT PARALLEL 48SSOPPackaging: Tube Package / Case: 48-BSSOP (0.295", 7.50mm Width) Mounting Type: Surface Mount Memory Size: 1Mbit Memory Type: Non-Volatile Operating Temperature: -40°C ~ 85°C (TA) Voltage - Supply: 2.7V ~ 3.6V Technology: NVSRAM (Non-Volatile SRAM) Memory Format: NVSRAM Supplier Device Package: 48-SSOP Write Cycle Time - Word, Page: 25ns Memory Interface: Parallel Access Time: 25 ns Memory Organization: 128K x 8 DigiKey Programmable: Not Verified |
на замовлення 144 шт: термін постачання 21-31 дні (днів) |
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CY14B101LA-SP45XI | Infineon Technologies |
Description: IC NVSRAM 1MBIT PARALLEL 48SSOPPackaging: Tube Package / Case: 48-BSSOP (0.295", 7.50mm Width) Mounting Type: Surface Mount Memory Size: 1Mbit Memory Type: Non-Volatile Operating Temperature: -40°C ~ 85°C (TA) Voltage - Supply: 2.7V ~ 3.6V Technology: NVSRAM (Non-Volatile SRAM) Memory Format: NVSRAM Supplier Device Package: 48-SSOP Write Cycle Time - Word, Page: 45ns Memory Interface: Parallel Access Time: 45 ns Memory Organization: 128K x 8 DigiKey Programmable: Not Verified |
на замовлення 812 шт: термін постачання 21-31 дні (днів) |
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CY14B101LA-ZS25XI | Infineon Technologies |
Description: IC NVSRAM 1MBIT PAR 44TSOP IIPackaging: Tray Package / Case: 44-TSOP (0.400", 10.16mm Width) Mounting Type: Surface Mount Memory Size: 1Mbit Memory Type: Non-Volatile Operating Temperature: -40°C ~ 85°C (TA) Voltage - Supply: 2.7V ~ 3.6V Technology: NVSRAM (Non-Volatile SRAM) Memory Format: NVSRAM Supplier Device Package: 44-TSOP II Write Cycle Time - Word, Page: 25ns Memory Interface: Parallel Access Time: 25 ns Memory Organization: 128K x 8 DigiKey Programmable: Not Verified |
товару немає в наявності |
Мінімальне замовлення: 270 шт В кошику од. на суму грн. | ||||||||||||
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CY14B101LA-ZS45XI | Infineon Technologies |
Description: IC NVSRAM 1MBIT PAR 44TSOP IIPackaging: Tray Package / Case: 44-TSOP (0.400", 10.16mm Width) Mounting Type: Surface Mount Memory Size: 1Mbit Memory Type: Non-Volatile Operating Temperature: -40°C ~ 85°C (TA) Voltage - Supply: 2.7V ~ 3.6V Technology: NVSRAM (Non-Volatile SRAM) Memory Format: NVSRAM Supplier Device Package: 44-TSOP II Write Cycle Time - Word, Page: 45ns Memory Interface: Parallel Access Time: 45 ns Memory Organization: 128K x 8 DigiKey Programmable: Not Verified |
на замовлення 270 шт: термін постачання 21-31 дні (днів) |
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CY14B101NA-ZS45XI | Infineon Technologies |
Description: IC NVSRAM 1MBIT PAR 44TSOP IIPackaging: Tray Package / Case: 44-TSOP (0.400", 10.16mm Width) Mounting Type: Surface Mount Memory Size: 1Mbit Memory Type: Non-Volatile Operating Temperature: -40°C ~ 85°C (TA) Voltage - Supply: 2.7V ~ 3.6V Technology: NVSRAM (Non-Volatile SRAM) Memory Format: NVSRAM Supplier Device Package: 44-TSOP II Write Cycle Time - Word, Page: 45ns Memory Interface: Parallel Access Time: 45 ns Memory Organization: 64K x 16 DigiKey Programmable: Not Verified |
на замовлення 601 шт: термін постачання 21-31 дні (днів) |
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CY14B108N-ZSP25XI | Infineon Technologies |
Description: IC NVSRAM 8MBIT PAR 54TSOP IIPackaging: Tray Package / Case: 54-TSOP (0.400", 10.16mm Width) Mounting Type: Surface Mount Memory Size: 8Mbit Memory Type: Non-Volatile Operating Temperature: -40°C ~ 85°C (TA) Voltage - Supply: 2.7V ~ 3.6V Technology: NVSRAM (Non-Volatile SRAM) Memory Format: NVSRAM Supplier Device Package: 54-TSOP II Write Cycle Time - Word, Page: 25ns Memory Interface: Parallel Access Time: 25 ns Memory Organization: 512K x 16 DigiKey Programmable: Not Verified |
на замовлення 157 шт: термін постачання 21-31 дні (днів) |
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CY14B256KA-SP45XI | Infineon Technologies |
Description: IC NVSRAM 256KBIT PAR 48SSOPPackaging: Tube Package / Case: 48-BSSOP (0.295", 7.50mm Width) Mounting Type: Surface Mount Memory Size: 256Kbit Memory Type: Non-Volatile Operating Temperature: -40°C ~ 85°C (TA) Voltage - Supply: 2.7V ~ 3.6V Technology: NVSRAM (Non-Volatile SRAM) Memory Format: NVSRAM Supplier Device Package: 48-SSOP Write Cycle Time - Word, Page: 45ns Memory Interface: Parallel Access Time: 45 ns Memory Organization: 32K x 8 DigiKey Programmable: Not Verified |
на замовлення 148 шт: термін постачання 21-31 дні (днів) |
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CY14B256LA-SP45XI | Infineon Technologies |
Description: IC NVSRAM 256KBIT PAR 48SSOPPackaging: Tube Package / Case: 48-BSSOP (0.295", 7.50mm Width) Mounting Type: Surface Mount Memory Size: 256Kbit Memory Type: Non-Volatile Operating Temperature: -40°C ~ 85°C (TA) Voltage - Supply: 2.7V ~ 3.6V Technology: NVSRAM (Non-Volatile SRAM) Memory Format: NVSRAM Supplier Device Package: 48-SSOP Part Status: Active Write Cycle Time - Word, Page: 45ns Memory Interface: Parallel Access Time: 45 ns Memory Organization: 32K x 8 DigiKey Programmable: Not Verified |
на замовлення 183 шт: термін постачання 21-31 дні (днів) |
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CY2VC511ZXC | Infineon Technologies |
Description: IC CLOCK GENERATOR 16TSSOPPackaging: Tube Package / Case: 16-TSSOP (0.173", 4.40mm Width) Mounting Type: Surface Mount Output: LVCMOS Frequency - Max: 27MHz Type: Clock Generator Input: LVCMOS Operating Temperature: 0°C ~ 70°C Voltage - Supply: 3.135V ~ 3.465V Ratio - Input:Output: 1:1 Differential - Input:Output: No/No Supplier Device Package: 16-TSSOP PLL: Yes Divider/Multiplier: No/No Number of Circuits: 1 DigiKey Programmable: Not Verified |
товару немає в наявності |
Мінімальне замовлення: 960 шт В кошику од. на суму грн. | ||||||||||||
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CY7C1071DV33-12BAXI | Infineon Technologies |
Description: IC SRAM 32MBIT PARALLEL 48FBGAPackaging: Tray Package / Case: 48-TFBGA Mounting Type: Surface Mount Memory Size: 32Mbit Memory Type: Volatile Operating Temperature: -40°C ~ 85°C (TA) Voltage - Supply: 3V ~ 3.6V Technology: SRAM - Asynchronous Memory Format: SRAM Supplier Device Package: 48-FBGA (8x9.5) Part Status: Active Write Cycle Time - Word, Page: 12ns Memory Interface: Parallel Access Time: 12 ns Memory Organization: 2M x 16 DigiKey Programmable: Not Verified |
на замовлення 392 шт: термін постачання 21-31 дні (днів) |
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CY7C11481KV18-400BZXC | Infineon Technologies |
Description: IC SRAM 18MBIT PARALLEL 165FBGAPackaging: Tray Package / Case: 165-LBGA Mounting Type: Surface Mount Memory Size: 18Mbit Memory Type: Volatile Operating Temperature: 0°C ~ 70°C (TA) Voltage - Supply: 1.7V ~ 1.9V Technology: SRAM - Synchronous, DDR II+ Clock Frequency: 400 MHz Memory Format: SRAM Supplier Device Package: 165-FBGA (13x15) Part Status: Obsolete Memory Interface: Parallel Memory Organization: 1M x 18 DigiKey Programmable: Not Verified |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||||||
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CY7C11701KV18-400BZXC | Infineon Technologies |
Description: IC SRAM 18MBIT PARALLEL 165FBGAPackaging: Tray Package / Case: 165-LBGA Mounting Type: Surface Mount Memory Size: 18Mbit Memory Type: Volatile Operating Temperature: 0°C ~ 70°C (TA) Voltage - Supply: 1.7V ~ 1.9V Technology: SRAM - Synchronous, DDR II+ Clock Frequency: 400 MHz Memory Format: SRAM Supplier Device Package: 165-FBGA (13x15) Part Status: Obsolete Memory Interface: Parallel Memory Organization: 512K x 36 DigiKey Programmable: Not Verified |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||||||
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CY7C12681KV18-450BZXC | Infineon Technologies |
Description: IC SRAM 36MBIT PAR 165FBGAPackaging: Tray Package / Case: 165-LBGA Mounting Type: Surface Mount Memory Size: 36Mbit Memory Type: Volatile Operating Temperature: 0°C ~ 70°C (TA) Voltage - Supply: 1.7V ~ 1.9V Technology: SRAM - Synchronous, DDR II+ Clock Frequency: 450 MHz Memory Format: SRAM Supplier Device Package: 165-FBGA (13x15) Memory Interface: Parallel Memory Organization: 2M x 18 DigiKey Programmable: Not Verified |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||||||
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CY7C1565KV18-450BZXC | Infineon Technologies |
Description: IC SRAM 72MBIT PAR 165FBGAPackaging: Tray Package / Case: 165-LBGA Mounting Type: Surface Mount Memory Size: 72Mbit Memory Type: Volatile Operating Temperature: 0°C ~ 70°C (TA) Voltage - Supply: 1.7V ~ 1.9V Technology: SRAM - Synchronous, QDR II+ Clock Frequency: 450 MHz Memory Format: SRAM Supplier Device Package: 165-FBGA (13x15) Memory Interface: Parallel Memory Organization: 2M x 36 DigiKey Programmable: Not Verified |
товару немає в наявності |
Мінімальне замовлення: 136 шт В кошику од. на суму грн. | ||||||||||||
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CY7C1570KV18-450BZXC | Infineon Technologies |
Description: IC SRAM 72MBIT PAR 165FBGAPackaging: Tray Package / Case: 165-LBGA Mounting Type: Surface Mount Memory Size: 72Mbit Memory Type: Volatile Operating Temperature: 0°C ~ 70°C (TA) Voltage - Supply: 1.7V ~ 1.9V Technology: SRAM - Synchronous, DDR II+ Clock Frequency: 450 MHz Memory Format: SRAM Supplier Device Package: 165-FBGA (13x15) Part Status: Active Memory Interface: Parallel Memory Organization: 2M x 36 DigiKey Programmable: Not Verified |
товару немає в наявності |
Мінімальне замовлення: 680 шт В кошику од. на суму грн. | ||||||||||||
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CY7C21701KV18-400BZXC | Infineon Technologies |
Description: IC SRAM 18MBIT PARALLEL 165FBGA |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||||||
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CY7C64215-56LTXI | Infineon Technologies |
Description: IC USB CTLR ENCORE III 56QFNDigiKey Programmable: Not Verified Number of I/O: 50 Supplier Device Package: 56-QFN-EP (8x8) Core Processor: M8C Applications: USB Microcontroller Program Memory Type: FLASH (16kB) Controller Series: CY7C642xx Voltage - Supply: 3V ~ 5.25V Operating Temperature: -40°C ~ 85°C RAM Size: 1K x 8 Interface: I2C, USB Mounting Type: Surface Mount Package / Case: 56-VFQFN Exposed Pad Packaging: Tray |
товару немає в наявності |
Мінімальне замовлення: 2600 шт В кошику од. на суму грн. | ||||||||||||
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CY7C65621-56LTXC | Infineon Technologies |
Description: IC USB CTLR 2.0 2-PORT AEC 56QFNDigiKey Programmable: Not Verified Part Status: Active Supplier Device Package: 56-QFN (8x8) Standards: USB 2.0 Protocol: USB Voltage - Supply: 3.15V ~ 3.45V Operating Temperature: 0°C ~ 70°C Interface: USB Function: Hub Controller Package / Case: 56-VFQFN Exposed Pad Packaging: Tray |
товару немає в наявності |
Мінімальне замовлення: 2600 шт В кошику од. на суму грн. | ||||||||||||
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CY8C20446H-24LQXI | Infineon Technologies |
Description: IC PSOC CAPSENSE 24MHZ 32QFNPackaging: Tray Package / Case: 32-UFQFN Exposed Pad Mounting Type: Surface Mount Interface: I2C, SPI RAM Size: 2K x 8 Operating Temperature: -40°C ~ 85°C Voltage - Supply: 1.71V ~ 5.5V Controller Series: CY8C20xx6 Program Memory Type: FLASH (16kB) Applications: Capacitive Sensing Core Processor: M8C Supplier Device Package: 32-QFN (5x5) Number of I/O: 28 DigiKey Programmable: Not Verified |
на замовлення 15 шт: термін постачання 21-31 дні (днів) |
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CY8C21345-24PVXA | Infineon Technologies |
Description: IC MCU 8BIT 8KB FLASH 28SSOPPackaging: Tube Package / Case: 28-SSOP (0.209", 5.30mm Width) Mounting Type: Surface Mount Speed: 24MHz Program Memory Size: 8KB (8K x 8) RAM Size: 512 x 8 Operating Temperature: -40°C ~ 85°C (TA) Oscillator Type: Internal Program Memory Type: FLASH Core Processor: M8C Data Converters: A/D 3x10b Core Size: 8-Bit Voltage - Supply (Vcc/Vdd): 3V ~ 5.25V Connectivity: I2C, IrDA, SPI, UART/USART Peripherals: LVD, POR, PWM, WDT Supplier Device Package: 28-SSOP Number of I/O: 24 DigiKey Programmable: Not Verified |
товару немає в наявності |
Мінімальне замовлення: 940 шт В кошику од. на суму грн. | ||||||||||||
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CY8C24894-24LFXA | Infineon Technologies |
Description: IC MCU 8BIT 16KB FLASH 56QFNPackaging: Tray Package / Case: 56-VFQFN Exposed Pad Mounting Type: Surface Mount Speed: 24MHz Program Memory Size: 16KB (16K x 8) RAM Size: 1K x 8 Operating Temperature: -40°C ~ 85°C (TA) Oscillator Type: Internal Program Memory Type: FLASH Core Processor: M8C Data Converters: A/D 48x14b; D/A 2x9b Core Size: 8-Bit Voltage - Supply (Vcc/Vdd): 3V ~ 5.25V Connectivity: I2C, SPI, UART/USART, USB Peripherals: POR, PWM, WDT Supplier Device Package: 56-QFN (8x8) Number of I/O: 49 DigiKey Programmable: Not Verified |
товару немає в наявності |
Мінімальне замовлення: 260 шт В кошику од. на суму грн. | ||||||||||||
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IR3837MTRPBF | Infineon Technologies |
Description: IC REG BUCK ADJ 14A 17PQFN |
товару немає в наявності |
Мінімальне замовлення: 4000 шт В кошику од. на суму грн. |
| 62-0203PBF |
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Виробник: Infineon Technologies
Description: MOSFET P-CH 12V 16A 8SO
Packaging: Tube
Package / Case: 8-SOIC (0.154", 3.90mm Width)
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: P-Channel
Current - Continuous Drain (Id) @ 25°C: 16A (Ta)
Rds On (Max) @ Id, Vgs: 7mOhm @ 16A, 4.5V
Power Dissipation (Max): 2.5W (Ta)
Vgs(th) (Max) @ Id: 900mV @ 250µA
Supplier Device Package: 8-SO
Part Status: Obsolete
Drive Voltage (Max Rds On, Min Rds On): 1.8V, 4.5V
Vgs (Max): ±8V
Drain to Source Voltage (Vdss): 12 V
Gate Charge (Qg) (Max) @ Vgs: 91 nC @ 4.5 V
Input Capacitance (Ciss) (Max) @ Vds: 8676 pF @ 10 V
Description: MOSFET P-CH 12V 16A 8SO
Packaging: Tube
Package / Case: 8-SOIC (0.154", 3.90mm Width)
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: P-Channel
Current - Continuous Drain (Id) @ 25°C: 16A (Ta)
Rds On (Max) @ Id, Vgs: 7mOhm @ 16A, 4.5V
Power Dissipation (Max): 2.5W (Ta)
Vgs(th) (Max) @ Id: 900mV @ 250µA
Supplier Device Package: 8-SO
Part Status: Obsolete
Drive Voltage (Max Rds On, Min Rds On): 1.8V, 4.5V
Vgs (Max): ±8V
Drain to Source Voltage (Vdss): 12 V
Gate Charge (Qg) (Max) @ Vgs: 91 nC @ 4.5 V
Input Capacitance (Ciss) (Max) @ Vds: 8676 pF @ 10 V
товару немає в наявності
В кошику
од. на суму грн.
| IRF8113GPBF |
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Виробник: Infineon Technologies
Description: MOSFET N-CH 30V 17.2A 8SO
Packaging: Tube
Package / Case: 8-SOIC (0.154", 3.90mm Width)
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 17.2A (Ta)
Rds On (Max) @ Id, Vgs: 5.6mOhm @ 17.2A, 10V
Power Dissipation (Max): 2.5W (Ta)
Vgs(th) (Max) @ Id: 2.2V @ 250µA
Supplier Device Package: 8-SO
Part Status: Obsolete
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 30 V
Gate Charge (Qg) (Max) @ Vgs: 36 nC @ 4.5 V
Input Capacitance (Ciss) (Max) @ Vds: 2910 pF @ 15 V
Description: MOSFET N-CH 30V 17.2A 8SO
Packaging: Tube
Package / Case: 8-SOIC (0.154", 3.90mm Width)
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 17.2A (Ta)
Rds On (Max) @ Id, Vgs: 5.6mOhm @ 17.2A, 10V
Power Dissipation (Max): 2.5W (Ta)
Vgs(th) (Max) @ Id: 2.2V @ 250µA
Supplier Device Package: 8-SO
Part Status: Obsolete
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 30 V
Gate Charge (Qg) (Max) @ Vgs: 36 nC @ 4.5 V
Input Capacitance (Ciss) (Max) @ Vds: 2910 pF @ 15 V
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| IRF8252PBF |
![]() |
Виробник: Infineon Technologies
Description: MOSFET N-CH 25V 25A 8SO
Packaging: Tube
Package / Case: 8-SOIC (0.154", 3.90mm Width)
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 25A (Ta)
Rds On (Max) @ Id, Vgs: 2.7mOhm @ 25A, 10V
Power Dissipation (Max): 2.5W (Ta)
Vgs(th) (Max) @ Id: 2.35V @ 100µA
Supplier Device Package: 8-SO
Part Status: Obsolete
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 25 V
Gate Charge (Qg) (Max) @ Vgs: 53 nC @ 4.5 V
Input Capacitance (Ciss) (Max) @ Vds: 5305 pF @ 13 V
Description: MOSFET N-CH 25V 25A 8SO
Packaging: Tube
Package / Case: 8-SOIC (0.154", 3.90mm Width)
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 25A (Ta)
Rds On (Max) @ Id, Vgs: 2.7mOhm @ 25A, 10V
Power Dissipation (Max): 2.5W (Ta)
Vgs(th) (Max) @ Id: 2.35V @ 100µA
Supplier Device Package: 8-SO
Part Status: Obsolete
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 25 V
Gate Charge (Qg) (Max) @ Vgs: 53 nC @ 4.5 V
Input Capacitance (Ciss) (Max) @ Vds: 5305 pF @ 13 V
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| IRF8788PBF |
![]() |
Виробник: Infineon Technologies
Description: MOSFET N-CH 30V 24A 8SO
Packaging: Tube
Package / Case: 8-SOIC (0.154", 3.90mm Width)
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 24A (Ta)
Rds On (Max) @ Id, Vgs: 2.8mOhm @ 24A, 10V
Power Dissipation (Max): 2.5W (Ta)
Vgs(th) (Max) @ Id: 2.35V @ 100µA
Supplier Device Package: 8-SO
Part Status: Discontinued at Digi-Key
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 30 V
Gate Charge (Qg) (Max) @ Vgs: 66 nC @ 4.5 V
Input Capacitance (Ciss) (Max) @ Vds: 5720 pF @ 15 V
Description: MOSFET N-CH 30V 24A 8SO
Packaging: Tube
Package / Case: 8-SOIC (0.154", 3.90mm Width)
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 24A (Ta)
Rds On (Max) @ Id, Vgs: 2.8mOhm @ 24A, 10V
Power Dissipation (Max): 2.5W (Ta)
Vgs(th) (Max) @ Id: 2.35V @ 100µA
Supplier Device Package: 8-SO
Part Status: Discontinued at Digi-Key
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 30 V
Gate Charge (Qg) (Max) @ Vgs: 66 nC @ 4.5 V
Input Capacitance (Ciss) (Max) @ Vds: 5720 pF @ 15 V
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| IRF8910GPBF |
![]() |
Виробник: Infineon Technologies
Description: MOSFET 2N-CH 20V 10A 8SO
Packaging: Tube
Package / Case: 8-SOIC (0.154", 3.90mm Width)
Mounting Type: Surface Mount
Configuration: 2 N-Channel (Dual)
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
Power - Max: 2W
Drain to Source Voltage (Vdss): 20V
Current - Continuous Drain (Id) @ 25°C: 10A
Input Capacitance (Ciss) (Max) @ Vds: 960pF @ 10V
Rds On (Max) @ Id, Vgs: 13.4mOhm @ 10A, 10V
Gate Charge (Qg) (Max) @ Vgs: 11nC @ 4.5V
FET Feature: Logic Level Gate
Vgs(th) (Max) @ Id: 2.55V @ 250µA
Supplier Device Package: 8-SO
Part Status: Obsolete
Description: MOSFET 2N-CH 20V 10A 8SO
Packaging: Tube
Package / Case: 8-SOIC (0.154", 3.90mm Width)
Mounting Type: Surface Mount
Configuration: 2 N-Channel (Dual)
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
Power - Max: 2W
Drain to Source Voltage (Vdss): 20V
Current - Continuous Drain (Id) @ 25°C: 10A
Input Capacitance (Ciss) (Max) @ Vds: 960pF @ 10V
Rds On (Max) @ Id, Vgs: 13.4mOhm @ 10A, 10V
Gate Charge (Qg) (Max) @ Vgs: 11nC @ 4.5V
FET Feature: Logic Level Gate
Vgs(th) (Max) @ Id: 2.55V @ 250µA
Supplier Device Package: 8-SO
Part Status: Obsolete
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| IRFH7911TRPBF |
![]() |
Виробник: Infineon Technologies
Description: MOSFET 2N-CH 30V 13A/28A PQFN
Packaging: Tape & Reel (TR)
Package / Case: 18-PowerVQFN
Mounting Type: Surface Mount
Configuration: 2 N-Channel (Dual)
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
Power - Max: 2.4W, 3.4W
Drain to Source Voltage (Vdss): 30V
Current - Continuous Drain (Id) @ 25°C: 13A, 28A
Input Capacitance (Ciss) (Max) @ Vds: 1060pF @ 15V
Rds On (Max) @ Id, Vgs: 8.6mOhm @ 12A, 10V
Gate Charge (Qg) (Max) @ Vgs: 12nC @ 4.5V
FET Feature: Logic Level Gate
Vgs(th) (Max) @ Id: 2.35V @ 25µA
Supplier Device Package: PQFN (5x6)
Description: MOSFET 2N-CH 30V 13A/28A PQFN
Packaging: Tape & Reel (TR)
Package / Case: 18-PowerVQFN
Mounting Type: Surface Mount
Configuration: 2 N-Channel (Dual)
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
Power - Max: 2.4W, 3.4W
Drain to Source Voltage (Vdss): 30V
Current - Continuous Drain (Id) @ 25°C: 13A, 28A
Input Capacitance (Ciss) (Max) @ Vds: 1060pF @ 15V
Rds On (Max) @ Id, Vgs: 8.6mOhm @ 12A, 10V
Gate Charge (Qg) (Max) @ Vgs: 12nC @ 4.5V
FET Feature: Logic Level Gate
Vgs(th) (Max) @ Id: 2.35V @ 25µA
Supplier Device Package: PQFN (5x6)
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| IRFR1018ETRRPBF |
![]() |
Виробник: Infineon Technologies
Description: MOSFET N-CH 60V 56A DPAK
Packaging: Tape & Reel (TR)
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 56A (Tc)
Rds On (Max) @ Id, Vgs: 8.4mOhm @ 47A, 10V
Power Dissipation (Max): 110W (Tc)
Vgs(th) (Max) @ Id: 4V @ 100µA
Supplier Device Package: TO-252AA (DPAK)
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 60 V
Gate Charge (Qg) (Max) @ Vgs: 69 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 2290 pF @ 50 V
Description: MOSFET N-CH 60V 56A DPAK
Packaging: Tape & Reel (TR)
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 56A (Tc)
Rds On (Max) @ Id, Vgs: 8.4mOhm @ 47A, 10V
Power Dissipation (Max): 110W (Tc)
Vgs(th) (Max) @ Id: 4V @ 100µA
Supplier Device Package: TO-252AA (DPAK)
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 60 V
Gate Charge (Qg) (Max) @ Vgs: 69 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 2290 pF @ 50 V
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| IRFR3410TRRPBF |
![]() |
Виробник: Infineon Technologies
Description: MOSFET N-CH 100V 31A DPAK
Packaging: Tape & Reel (TR)
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 31A (Tc)
Rds On (Max) @ Id, Vgs: 39mOhm @ 18A, 10V
Power Dissipation (Max): 3W (Ta), 110W (Tc)
Vgs(th) (Max) @ Id: 4V @ 250µA
Supplier Device Package: TO-252AA (DPAK)
Part Status: Obsolete
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 100 V
Gate Charge (Qg) (Max) @ Vgs: 56 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 1690 pF @ 25 V
Description: MOSFET N-CH 100V 31A DPAK
Packaging: Tape & Reel (TR)
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 31A (Tc)
Rds On (Max) @ Id, Vgs: 39mOhm @ 18A, 10V
Power Dissipation (Max): 3W (Ta), 110W (Tc)
Vgs(th) (Max) @ Id: 4V @ 250µA
Supplier Device Package: TO-252AA (DPAK)
Part Status: Obsolete
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 100 V
Gate Charge (Qg) (Max) @ Vgs: 56 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 1690 pF @ 25 V
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| IRFS4229TRLPBF |
![]() |
Виробник: Infineon Technologies
Description: MOSFET N-CH 250V 45A D2PAK
Packaging: Tape & Reel (TR)
Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
Mounting Type: Surface Mount
Operating Temperature: -40°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 45A (Tc)
Rds On (Max) @ Id, Vgs: 48mOhm @ 26A, 10V
Power Dissipation (Max): 330W (Tc)
Vgs(th) (Max) @ Id: 5V @ 250µA
Supplier Device Package: PG-TO263-3
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±30V
Drain to Source Voltage (Vdss): 250 V
Gate Charge (Qg) (Max) @ Vgs: 110 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 4560 pF @ 25 V
Description: MOSFET N-CH 250V 45A D2PAK
Packaging: Tape & Reel (TR)
Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
Mounting Type: Surface Mount
Operating Temperature: -40°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 45A (Tc)
Rds On (Max) @ Id, Vgs: 48mOhm @ 26A, 10V
Power Dissipation (Max): 330W (Tc)
Vgs(th) (Max) @ Id: 5V @ 250µA
Supplier Device Package: PG-TO263-3
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±30V
Drain to Source Voltage (Vdss): 250 V
Gate Charge (Qg) (Max) @ Vgs: 110 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 4560 pF @ 25 V
на замовлення 1600 шт:
термін постачання 21-31 дні (днів)
| Кількість | Ціна без ПДВ |
|---|---|
| 800+ | 101.26 грн |
| 1600+ | 96.21 грн |
| IRLR8726PBF |
![]() |
Виробник: Infineon Technologies
Description: MOSFET N-CH 30V 86A DPAK
Packaging: Tube
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 86A (Tc)
Rds On (Max) @ Id, Vgs: 5.8mOhm @ 25A, 10V
Power Dissipation (Max): 75W (Tc)
Vgs(th) (Max) @ Id: 2.35V @ 50µA
Supplier Device Package: TO-252AA (DPAK)
Part Status: Discontinued at Digi-Key
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 30 V
Gate Charge (Qg) (Max) @ Vgs: 23 nC @ 4.5 V
Input Capacitance (Ciss) (Max) @ Vds: 2150 pF @ 15 V
Description: MOSFET N-CH 30V 86A DPAK
Packaging: Tube
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 86A (Tc)
Rds On (Max) @ Id, Vgs: 5.8mOhm @ 25A, 10V
Power Dissipation (Max): 75W (Tc)
Vgs(th) (Max) @ Id: 2.35V @ 50µA
Supplier Device Package: TO-252AA (DPAK)
Part Status: Discontinued at Digi-Key
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 30 V
Gate Charge (Qg) (Max) @ Vgs: 23 nC @ 4.5 V
Input Capacitance (Ciss) (Max) @ Vds: 2150 pF @ 15 V
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| IRLR8726TRLPBF |
![]() |
Виробник: Infineon Technologies
Description: MOSFET N-CH 30V 86A DPAK
Packaging: Tape & Reel (TR)
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 86A (Tc)
Rds On (Max) @ Id, Vgs: 5.8mOhm @ 25A, 10V
Power Dissipation (Max): 75W (Tc)
Vgs(th) (Max) @ Id: 2.35V @ 50µA
Supplier Device Package: TO-252AA (DPAK)
Part Status: Not For New Designs
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 30 V
Gate Charge (Qg) (Max) @ Vgs: 23 nC @ 4.5 V
Input Capacitance (Ciss) (Max) @ Vds: 2150 pF @ 15 V
Description: MOSFET N-CH 30V 86A DPAK
Packaging: Tape & Reel (TR)
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 86A (Tc)
Rds On (Max) @ Id, Vgs: 5.8mOhm @ 25A, 10V
Power Dissipation (Max): 75W (Tc)
Vgs(th) (Max) @ Id: 2.35V @ 50µA
Supplier Device Package: TO-252AA (DPAK)
Part Status: Not For New Designs
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 30 V
Gate Charge (Qg) (Max) @ Vgs: 23 nC @ 4.5 V
Input Capacitance (Ciss) (Max) @ Vds: 2150 pF @ 15 V
товару немає в наявності
Мінімальне замовлення: 3000 шт
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| IRLR8729PBF |
![]() |
Виробник: Infineon Technologies
Description: MOSFET N-CH 30V 58A D-PAK
Packaging: Tube
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 58A (Tc)
Rds On (Max) @ Id, Vgs: 8.9mOhm @ 25A, 10V
Power Dissipation (Max): 55W (Tc)
Vgs(th) (Max) @ Id: 2.35V @ 25µA
Supplier Device Package: TO-252AA (DPAK)
Part Status: Discontinued at Digi-Key
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 30 V
Gate Charge (Qg) (Max) @ Vgs: 16 nC @ 4.5 V
Input Capacitance (Ciss) (Max) @ Vds: 1350 pF @ 15 V
Description: MOSFET N-CH 30V 58A D-PAK
Packaging: Tube
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 58A (Tc)
Rds On (Max) @ Id, Vgs: 8.9mOhm @ 25A, 10V
Power Dissipation (Max): 55W (Tc)
Vgs(th) (Max) @ Id: 2.35V @ 25µA
Supplier Device Package: TO-252AA (DPAK)
Part Status: Discontinued at Digi-Key
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 30 V
Gate Charge (Qg) (Max) @ Vgs: 16 nC @ 4.5 V
Input Capacitance (Ciss) (Max) @ Vds: 1350 pF @ 15 V
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| IRLR8729TRLPBF |
![]() |
Виробник: Infineon Technologies
Description: MOSFET N-CH 30V 58A D-PAK
Packaging: Tape & Reel (TR)
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 58A (Tc)
Rds On (Max) @ Id, Vgs: 8.9mOhm @ 25A, 10V
Power Dissipation (Max): 55W (Tc)
Vgs(th) (Max) @ Id: 2.35V @ 25µA
Supplier Device Package: TO-252AA (DPAK)
Part Status: Obsolete
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 30 V
Gate Charge (Qg) (Max) @ Vgs: 16 nC @ 4.5 V
Input Capacitance (Ciss) (Max) @ Vds: 1350 pF @ 15 V
Description: MOSFET N-CH 30V 58A D-PAK
Packaging: Tape & Reel (TR)
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 58A (Tc)
Rds On (Max) @ Id, Vgs: 8.9mOhm @ 25A, 10V
Power Dissipation (Max): 55W (Tc)
Vgs(th) (Max) @ Id: 2.35V @ 25µA
Supplier Device Package: TO-252AA (DPAK)
Part Status: Obsolete
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 30 V
Gate Charge (Qg) (Max) @ Vgs: 16 nC @ 4.5 V
Input Capacitance (Ciss) (Max) @ Vds: 1350 pF @ 15 V
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| IRLS3036TRRPBF |
![]() |
Виробник: Infineon Technologies
Description: MOSFET N-CH 60V 195A D2PAK
Packaging: Tape & Reel (TR)
Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 195A (Tc)
Rds On (Max) @ Id, Vgs: 2.4mOhm @ 165A, 10V
Power Dissipation (Max): 380W (Tc)
Vgs(th) (Max) @ Id: 2.5V @ 250µA
Supplier Device Package: D2PAK
Part Status: Obsolete
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±16V
Drain to Source Voltage (Vdss): 60 V
Gate Charge (Qg) (Max) @ Vgs: 140 nC @ 4.5 V
Input Capacitance (Ciss) (Max) @ Vds: 11210 pF @ 50 V
Description: MOSFET N-CH 60V 195A D2PAK
Packaging: Tape & Reel (TR)
Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 195A (Tc)
Rds On (Max) @ Id, Vgs: 2.4mOhm @ 165A, 10V
Power Dissipation (Max): 380W (Tc)
Vgs(th) (Max) @ Id: 2.5V @ 250µA
Supplier Device Package: D2PAK
Part Status: Obsolete
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±16V
Drain to Source Voltage (Vdss): 60 V
Gate Charge (Qg) (Max) @ Vgs: 140 nC @ 4.5 V
Input Capacitance (Ciss) (Max) @ Vds: 11210 pF @ 50 V
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| IRLU8256PBF |
![]() |
Виробник: Infineon Technologies
Description: MOSFET N-CH 25V 81A IPAK
Packaging: Tube
Package / Case: TO-251-3 Short Leads, IPak, TO-251AA
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 81A (Tc)
Rds On (Max) @ Id, Vgs: 5.7mOhm @ 25A, 10V
Power Dissipation (Max): 63W (Tc)
Vgs(th) (Max) @ Id: 2.35V @ 25µA
Supplier Device Package: IPAK
Part Status: Obsolete
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 25 V
Gate Charge (Qg) (Max) @ Vgs: 15 nC @ 4.5 V
Input Capacitance (Ciss) (Max) @ Vds: 1470 pF @ 13 V
Description: MOSFET N-CH 25V 81A IPAK
Packaging: Tube
Package / Case: TO-251-3 Short Leads, IPak, TO-251AA
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 81A (Tc)
Rds On (Max) @ Id, Vgs: 5.7mOhm @ 25A, 10V
Power Dissipation (Max): 63W (Tc)
Vgs(th) (Max) @ Id: 2.35V @ 25µA
Supplier Device Package: IPAK
Part Status: Obsolete
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 25 V
Gate Charge (Qg) (Max) @ Vgs: 15 nC @ 4.5 V
Input Capacitance (Ciss) (Max) @ Vds: 1470 pF @ 13 V
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| IRLU8259PBF |
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Виробник: Infineon Technologies
Description: MOSFET N-CH 25V 57A IPAK
Packaging: Tube
Package / Case: TO-251-3 Short Leads, IPak, TO-251AA
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 57A (Tc)
Rds On (Max) @ Id, Vgs: 8.7mOhm @ 21A, 10V
Power Dissipation (Max): 48W (Tc)
Vgs(th) (Max) @ Id: 2.35V @ 25µA
Supplier Device Package: IPAK
Part Status: Obsolete
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 25 V
Gate Charge (Qg) (Max) @ Vgs: 10 nC @ 4.5 V
Input Capacitance (Ciss) (Max) @ Vds: 900 pF @ 13 V
Voltage Coupled to Gate Charge (Qg) (Max) @ Vgs: 4.5
Voltage Coupled to Input Capacitance (Ciss) (Max) @ Vds: 13
Description: MOSFET N-CH 25V 57A IPAK
Packaging: Tube
Package / Case: TO-251-3 Short Leads, IPak, TO-251AA
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 57A (Tc)
Rds On (Max) @ Id, Vgs: 8.7mOhm @ 21A, 10V
Power Dissipation (Max): 48W (Tc)
Vgs(th) (Max) @ Id: 2.35V @ 25µA
Supplier Device Package: IPAK
Part Status: Obsolete
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 25 V
Gate Charge (Qg) (Max) @ Vgs: 10 nC @ 4.5 V
Input Capacitance (Ciss) (Max) @ Vds: 900 pF @ 13 V
Voltage Coupled to Gate Charge (Qg) (Max) @ Vgs: 4.5
Voltage Coupled to Input Capacitance (Ciss) (Max) @ Vds: 13
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| IRMCF343TY |
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Виробник: Infineon Technologies
Description: IC MOTOR DRIVER 64MQFP
Description: IC MOTOR DRIVER 64MQFP
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| IRMCF371TY |
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Виробник: Infineon Technologies
Description: IC MTRDRV 1.62-1.98/3-3.6V 48QFP
Interface: I²C, RS-232, SPI
Function: Controller - Commutation, Direction Management
Mounting Type: Surface Mount
Package / Case: 48-LQFP
Packaging: Tray
Motor Type - AC, DC: AC, Synchronous
Supplier Device Package: 48-QFP (7x7)
Technology: IGBT
Applications: Appliance
Voltage - Supply: 1.62V ~ 1.98V, 3V ~ 3.6V
Output Configuration: Pre-Driver - Half Bridge (3)
Operating Temperature: -40°C ~ 85°C (TA)
Description: IC MTRDRV 1.62-1.98/3-3.6V 48QFP
Interface: I²C, RS-232, SPI
Function: Controller - Commutation, Direction Management
Mounting Type: Surface Mount
Package / Case: 48-LQFP
Packaging: Tray
Motor Type - AC, DC: AC, Synchronous
Supplier Device Package: 48-QFP (7x7)
Technology: IGBT
Applications: Appliance
Voltage - Supply: 1.62V ~ 1.98V, 3V ~ 3.6V
Output Configuration: Pre-Driver - Half Bridge (3)
Operating Temperature: -40°C ~ 85°C (TA)
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| IRMCK371TY |
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Виробник: Infineon Technologies
Description: IC MTRDRV 1.62-1.98/3-3.6V 48QFP
Motor Type - AC, DC: AC, Synchronous
Supplier Device Package: 48-QFP (7x7)
Technology: IGBT
Applications: Appliance
Voltage - Supply: 1.62V ~ 1.98V, 3V ~ 3.6V
Output Configuration: Pre-Driver - Half Bridge (3)
Operating Temperature: -40°C ~ 85°C (TA)
Interface: I2C, RS-232, SPI
Function: Controller - Commutation, Direction Management
Mounting Type: Surface Mount
Package / Case: 48-LQFP
Packaging: Tray
Description: IC MTRDRV 1.62-1.98/3-3.6V 48QFP
Motor Type - AC, DC: AC, Synchronous
Supplier Device Package: 48-QFP (7x7)
Technology: IGBT
Applications: Appliance
Voltage - Supply: 1.62V ~ 1.98V, 3V ~ 3.6V
Output Configuration: Pre-Driver - Half Bridge (3)
Operating Temperature: -40°C ~ 85°C (TA)
Interface: I2C, RS-232, SPI
Function: Controller - Commutation, Direction Management
Mounting Type: Surface Mount
Package / Case: 48-LQFP
Packaging: Tray
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Мінімальне замовлення: 1500 шт
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| IRPP3637-06A |
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Виробник: Infineon Technologies
Description: BOARD REF DESIGN POWIR+
Part Status: Obsolete
Outputs and Type: 1, Non-Isolated
Main Purpose: DC/DC, Step Down
Supplied Contents: Board(s)
Utilized IC / Part: IR3637, IRF8910
Board Type: Fully Populated
Regulator Topology: Buck
Frequency - Switching: 600kHz
Current - Output: 6A
Voltage - Input: 4.5V ~ 5.5V
Voltage - Output: 1.25V
Packaging: Tube
Description: BOARD REF DESIGN POWIR+
Part Status: Obsolete
Outputs and Type: 1, Non-Isolated
Main Purpose: DC/DC, Step Down
Supplied Contents: Board(s)
Utilized IC / Part: IR3637, IRF8910
Board Type: Fully Populated
Regulator Topology: Buck
Frequency - Switching: 600kHz
Current - Output: 6A
Voltage - Input: 4.5V ~ 5.5V
Voltage - Output: 1.25V
Packaging: Tube
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| IRS2093MTRPBF |
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Виробник: Infineon Technologies
Description: IC AMP CLASS D QUAD 48MLPQ
Packaging: Tape & Reel (TR)
Part Status: Active
Supplier Device Package: PG-VQFN-48
Voltage - Supply: 10V ~ 15V
Operating Temperature: -40°C ~ 125°C (TA)
Type: Class D
Mounting Type: Surface Mount
Output Type: 4-Channel (Quad)
Package / Case: 48-VFQFN Exposed Pad
Features: Depop, Short-Circuit Protection, Shutdown
Description: IC AMP CLASS D QUAD 48MLPQ
Packaging: Tape & Reel (TR)
Part Status: Active
Supplier Device Package: PG-VQFN-48
Voltage - Supply: 10V ~ 15V
Operating Temperature: -40°C ~ 125°C (TA)
Type: Class D
Mounting Type: Surface Mount
Output Type: 4-Channel (Quad)
Package / Case: 48-VFQFN Exposed Pad
Features: Depop, Short-Circuit Protection, Shutdown
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| IRS210614STRPBF |
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Виробник: Infineon Technologies
Description: IC GATE DRVR HALF-BRIDGE 14SOIC
Packaging: Tape & Reel (TR)
Package / Case: 14-SOIC (0.154", 3.90mm Width)
Mounting Type: Surface Mount
Operating Temperature: -40°C ~ 150°C (TJ)
Voltage - Supply: 10V ~ 20V
Input Type: Non-Inverting
High Side Voltage - Max (Bootstrap): 600 V
Supplier Device Package: 14-SOIC
Rise / Fall Time (Typ): 100ns, 35ns
Channel Type: Independent
Driven Configuration: Half-Bridge
Number of Drivers: 2
Gate Type: IGBT, MOSFET (N-Channel)
Logic Voltage - VIL, VIH: 0.8V, 2.5V
Current - Peak Output (Source, Sink): 290mA, 600mA
DigiKey Programmable: Not Verified
Description: IC GATE DRVR HALF-BRIDGE 14SOIC
Packaging: Tape & Reel (TR)
Package / Case: 14-SOIC (0.154", 3.90mm Width)
Mounting Type: Surface Mount
Operating Temperature: -40°C ~ 150°C (TJ)
Voltage - Supply: 10V ~ 20V
Input Type: Non-Inverting
High Side Voltage - Max (Bootstrap): 600 V
Supplier Device Package: 14-SOIC
Rise / Fall Time (Typ): 100ns, 35ns
Channel Type: Independent
Driven Configuration: Half-Bridge
Number of Drivers: 2
Gate Type: IGBT, MOSFET (N-Channel)
Logic Voltage - VIL, VIH: 0.8V, 2.5V
Current - Peak Output (Source, Sink): 290mA, 600mA
DigiKey Programmable: Not Verified
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| IRS2123SPBF |
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Виробник: Infineon Technologies
Description: IC GATE DRVR HIGH-SIDE 8SOIC
Packaging: Tube
Package / Case: 8-SOIC (0.154", 3.90mm Width)
Mounting Type: Surface Mount
Operating Temperature: -40°C ~ 150°C (TJ)
Voltage - Supply: 10V ~ 20V
Input Type: Non-Inverting
High Side Voltage - Max (Bootstrap): 600 V
Supplier Device Package: 8-SOIC
Rise / Fall Time (Typ): 80ns, 80ns
Channel Type: Single
Driven Configuration: High-Side
Number of Drivers: 1
Gate Type: IGBT, N-Channel MOSFET
Current - Peak Output (Source, Sink): 500mA, 500mA
Part Status: Obsolete
DigiKey Programmable: Not Verified
Description: IC GATE DRVR HIGH-SIDE 8SOIC
Packaging: Tube
Package / Case: 8-SOIC (0.154", 3.90mm Width)
Mounting Type: Surface Mount
Operating Temperature: -40°C ~ 150°C (TJ)
Voltage - Supply: 10V ~ 20V
Input Type: Non-Inverting
High Side Voltage - Max (Bootstrap): 600 V
Supplier Device Package: 8-SOIC
Rise / Fall Time (Typ): 80ns, 80ns
Channel Type: Single
Driven Configuration: High-Side
Number of Drivers: 1
Gate Type: IGBT, N-Channel MOSFET
Current - Peak Output (Source, Sink): 500mA, 500mA
Part Status: Obsolete
DigiKey Programmable: Not Verified
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| IRS21571DSTRPBF |
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Виробник: Infineon Technologies
Description: IC BALLAST CNTRL 48.3KHZ 16SOIC
Packaging: Tape & Reel (TR)
Package / Case: 16-SOIC (0.154", 3.90mm Width)
Mounting Type: Surface Mount
Frequency: 43.7kHz ~ 48.3kHz
Type: Ballast Controller
Operating Temperature: -40°C ~ 125°C
Voltage - Supply: 11.5V ~ 15.6V
Supplier Device Package: 16-SOIC
Current - Supply: 10 mA
Description: IC BALLAST CNTRL 48.3KHZ 16SOIC
Packaging: Tape & Reel (TR)
Package / Case: 16-SOIC (0.154", 3.90mm Width)
Mounting Type: Surface Mount
Frequency: 43.7kHz ~ 48.3kHz
Type: Ballast Controller
Operating Temperature: -40°C ~ 125°C
Voltage - Supply: 11.5V ~ 15.6V
Supplier Device Package: 16-SOIC
Current - Supply: 10 mA
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| IRS21850STRPBF |
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Виробник: Infineon Technologies
Description: IC GATE DRVR HIGH-SIDE 8SOIC
Packaging: Tape & Reel (TR)
Package / Case: 8-SOIC (0.154", 3.90mm Width)
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Voltage - Supply: 10V ~ 20V
Input Type: Non-Inverting
High Side Voltage - Max (Bootstrap): 600 V
Supplier Device Package: 8-SOIC
Rise / Fall Time (Typ): 15ns, 15ns
Channel Type: Single
Driven Configuration: High-Side
Number of Drivers: 1
Gate Type: IGBT, MOSFET (N-Channel)
Logic Voltage - VIL, VIH: 0.8V, 2.5V
Current - Peak Output (Source, Sink): 4A, 4A
Part Status: Obsolete
DigiKey Programmable: Not Verified
Description: IC GATE DRVR HIGH-SIDE 8SOIC
Packaging: Tape & Reel (TR)
Package / Case: 8-SOIC (0.154", 3.90mm Width)
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Voltage - Supply: 10V ~ 20V
Input Type: Non-Inverting
High Side Voltage - Max (Bootstrap): 600 V
Supplier Device Package: 8-SOIC
Rise / Fall Time (Typ): 15ns, 15ns
Channel Type: Single
Driven Configuration: High-Side
Number of Drivers: 1
Gate Type: IGBT, MOSFET (N-Channel)
Logic Voltage - VIL, VIH: 0.8V, 2.5V
Current - Peak Output (Source, Sink): 4A, 4A
Part Status: Obsolete
DigiKey Programmable: Not Verified
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| IRS21856STRPBF |
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Виробник: Infineon Technologies
Description: IC GATE DRVR HALF-BRIDGE 14SOIC
Packaging: Tape & Reel (TR)
Package / Case: 14-SOIC (0.154", 3.90mm Width)
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Voltage - Supply: 10V ~ 20V
Input Type: Non-Inverting
High Side Voltage - Max (Bootstrap): 600 V
Supplier Device Package: 14-SOIC
Rise / Fall Time (Typ): 30ns, 20ns
Channel Type: Independent
Driven Configuration: Half-Bridge
Number of Drivers: 2
Gate Type: IGBT, MOSFET (N-Channel)
Logic Voltage - VIL, VIH: 0.8V, 3.5V
Current - Peak Output (Source, Sink): 500mA, 500mA
DigiKey Programmable: Not Verified
Description: IC GATE DRVR HALF-BRIDGE 14SOIC
Packaging: Tape & Reel (TR)
Package / Case: 14-SOIC (0.154", 3.90mm Width)
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Voltage - Supply: 10V ~ 20V
Input Type: Non-Inverting
High Side Voltage - Max (Bootstrap): 600 V
Supplier Device Package: 14-SOIC
Rise / Fall Time (Typ): 30ns, 20ns
Channel Type: Independent
Driven Configuration: Half-Bridge
Number of Drivers: 2
Gate Type: IGBT, MOSFET (N-Channel)
Logic Voltage - VIL, VIH: 0.8V, 3.5V
Current - Peak Output (Source, Sink): 500mA, 500mA
DigiKey Programmable: Not Verified
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| IRS21858STRPBF |
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Виробник: Infineon Technologies
Description: IC GATE DRVR HIGH-SIDE 16SOIC
Packaging: Tape & Reel (TR)
Package / Case: 16-SOIC (0.154", 3.90mm Width)
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Voltage - Supply: 10V ~ 20V
Input Type: Non-Inverting
High Side Voltage - Max (Bootstrap): 600 V
Supplier Device Package: 16-SOIC
Rise / Fall Time (Typ): 60ns, 20ns
Channel Type: Independent
Driven Configuration: High-Side
Number of Drivers: 2
Gate Type: IGBT, N-Channel MOSFET
Logic Voltage - VIL, VIH: 0.8V, 3.5V
Current - Peak Output (Source, Sink): 290mA, 600mA
DigiKey Programmable: Not Verified
Description: IC GATE DRVR HIGH-SIDE 16SOIC
Packaging: Tape & Reel (TR)
Package / Case: 16-SOIC (0.154", 3.90mm Width)
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Voltage - Supply: 10V ~ 20V
Input Type: Non-Inverting
High Side Voltage - Max (Bootstrap): 600 V
Supplier Device Package: 16-SOIC
Rise / Fall Time (Typ): 60ns, 20ns
Channel Type: Independent
Driven Configuration: High-Side
Number of Drivers: 2
Gate Type: IGBT, N-Channel MOSFET
Logic Voltage - VIL, VIH: 0.8V, 3.5V
Current - Peak Output (Source, Sink): 290mA, 600mA
DigiKey Programmable: Not Verified
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| IRS21956STRPBF |
![]() |
Виробник: Infineon Technologies
Description: IC GATE DRVR HALF-BRIDGE 20SOIC
Packaging: Tape & Reel (TR)
Package / Case: 20-SOIC (0.295", 7.50mm Width)
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Voltage - Supply: 10V ~ 20V
Input Type: Non-Inverting
High Side Voltage - Max (Bootstrap): 600 V
Supplier Device Package: 20-SOIC
Rise / Fall Time (Typ): 25ns, 15ns
Channel Type: Independent
Driven Configuration: Half-Bridge
Number of Drivers: 2
Gate Type: IGBT, N-Channel MOSFET
Logic Voltage - VIL, VIH: 0.8V, 3.5V
Current - Peak Output (Source, Sink): 500mA, 500mA
DigiKey Programmable: Not Verified
Description: IC GATE DRVR HALF-BRIDGE 20SOIC
Packaging: Tape & Reel (TR)
Package / Case: 20-SOIC (0.295", 7.50mm Width)
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Voltage - Supply: 10V ~ 20V
Input Type: Non-Inverting
High Side Voltage - Max (Bootstrap): 600 V
Supplier Device Package: 20-SOIC
Rise / Fall Time (Typ): 25ns, 15ns
Channel Type: Independent
Driven Configuration: Half-Bridge
Number of Drivers: 2
Gate Type: IGBT, N-Channel MOSFET
Logic Voltage - VIL, VIH: 0.8V, 3.5V
Current - Peak Output (Source, Sink): 500mA, 500mA
DigiKey Programmable: Not Verified
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| IRS21962STRPBF |
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Виробник: Infineon Technologies
Description: IC GATE DRVR HIGH-SIDE 16SOIC
Packaging: Tape & Reel (TR)
Package / Case: 16-SOIC (0.154", 3.90mm Width)
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Voltage - Supply: 10V ~ 20V
Input Type: Non-Inverting
High Side Voltage - Max (Bootstrap): 600 V
Supplier Device Package: 16-SOIC
Rise / Fall Time (Typ): 25ns, 25ns
Channel Type: Independent
Driven Configuration: High-Side
Number of Drivers: 2
Gate Type: IGBT, N-Channel MOSFET
Logic Voltage - VIL, VIH: 0.6V, 3.5V
Current - Peak Output (Source, Sink): 500mA, 500mA
DigiKey Programmable: Not Verified
Description: IC GATE DRVR HIGH-SIDE 16SOIC
Packaging: Tape & Reel (TR)
Package / Case: 16-SOIC (0.154", 3.90mm Width)
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Voltage - Supply: 10V ~ 20V
Input Type: Non-Inverting
High Side Voltage - Max (Bootstrap): 600 V
Supplier Device Package: 16-SOIC
Rise / Fall Time (Typ): 25ns, 25ns
Channel Type: Independent
Driven Configuration: High-Side
Number of Drivers: 2
Gate Type: IGBT, N-Channel MOSFET
Logic Voltage - VIL, VIH: 0.6V, 3.5V
Current - Peak Output (Source, Sink): 500mA, 500mA
DigiKey Programmable: Not Verified
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| IRS2330STRPBF |
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Виробник: Infineon Technologies
Description: IC GATE DRVR HALF-BRIDGE 28SOIC
Packaging: Tape & Reel (TR)
Package / Case: 28-SOIC (0.295", 7.50mm Width)
Mounting Type: Surface Mount
Operating Temperature: -40°C ~ 150°C (TJ)
Voltage - Supply: 10V ~ 20V
Input Type: Inverting
High Side Voltage - Max (Bootstrap): 600 V
Supplier Device Package: 28-SOIC
Rise / Fall Time (Typ): 80ns, 35ns
Channel Type: 3-Phase
Driven Configuration: Half-Bridge
Number of Drivers: 6
Gate Type: IGBT, MOSFET (N-Channel)
Logic Voltage - VIL, VIH: 0.8V, 2.2V
Current - Peak Output (Source, Sink): 250mA, 500mA
Part Status: Obsolete
DigiKey Programmable: Not Verified
Description: IC GATE DRVR HALF-BRIDGE 28SOIC
Packaging: Tape & Reel (TR)
Package / Case: 28-SOIC (0.295", 7.50mm Width)
Mounting Type: Surface Mount
Operating Temperature: -40°C ~ 150°C (TJ)
Voltage - Supply: 10V ~ 20V
Input Type: Inverting
High Side Voltage - Max (Bootstrap): 600 V
Supplier Device Package: 28-SOIC
Rise / Fall Time (Typ): 80ns, 35ns
Channel Type: 3-Phase
Driven Configuration: Half-Bridge
Number of Drivers: 6
Gate Type: IGBT, MOSFET (N-Channel)
Logic Voltage - VIL, VIH: 0.8V, 2.2V
Current - Peak Output (Source, Sink): 250mA, 500mA
Part Status: Obsolete
DigiKey Programmable: Not Verified
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| IRS2332DJPBF |
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Виробник: Infineon Technologies
Description: IC GATE DRVR HALF-BRIDGE 44PLCC
Packaging: Tube
Package / Case: 44-LCC (J-Lead), 32 Leads
Mounting Type: Surface Mount
Operating Temperature: -40°C ~ 150°C (TJ)
Voltage - Supply: 10V ~ 20V
Input Type: Inverting
High Side Voltage - Max (Bootstrap): 600 V
Supplier Device Package: 44-PLCC, 32 Leads (16.58x16.58)
Rise / Fall Time (Typ): 80ns, 35ns
Channel Type: 3-Phase
Driven Configuration: Half-Bridge
Number of Drivers: 6
Gate Type: IGBT, MOSFET (N-Channel)
Logic Voltage - VIL, VIH: 0.8V, 2.2V
Current - Peak Output (Source, Sink): 250mA, 500mA
Part Status: Obsolete
DigiKey Programmable: Not Verified
Description: IC GATE DRVR HALF-BRIDGE 44PLCC
Packaging: Tube
Package / Case: 44-LCC (J-Lead), 32 Leads
Mounting Type: Surface Mount
Operating Temperature: -40°C ~ 150°C (TJ)
Voltage - Supply: 10V ~ 20V
Input Type: Inverting
High Side Voltage - Max (Bootstrap): 600 V
Supplier Device Package: 44-PLCC, 32 Leads (16.58x16.58)
Rise / Fall Time (Typ): 80ns, 35ns
Channel Type: 3-Phase
Driven Configuration: Half-Bridge
Number of Drivers: 6
Gate Type: IGBT, MOSFET (N-Channel)
Logic Voltage - VIL, VIH: 0.8V, 2.2V
Current - Peak Output (Source, Sink): 250mA, 500mA
Part Status: Obsolete
DigiKey Programmable: Not Verified
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| IRS2332DSTRPBF |
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Виробник: Infineon Technologies
Description: IC GATE DRVR HALF-BRIDGE 28SOIC
Packaging: Tape & Reel (TR)
Package / Case: 28-SOIC (0.295", 7.50mm Width)
Mounting Type: Surface Mount
Operating Temperature: -40°C ~ 150°C (TJ)
Voltage - Supply: 10V ~ 20V
Input Type: Inverting
High Side Voltage - Max (Bootstrap): 600 V
Supplier Device Package: 28-SOIC
Rise / Fall Time (Typ): 80ns, 35ns
Channel Type: 3-Phase
Driven Configuration: Half-Bridge
Number of Drivers: 6
Gate Type: IGBT, MOSFET (N-Channel)
Logic Voltage - VIL, VIH: 0.8V, 2.2V
Current - Peak Output (Source, Sink): 250mA, 500mA
Part Status: Obsolete
DigiKey Programmable: Not Verified
Description: IC GATE DRVR HALF-BRIDGE 28SOIC
Packaging: Tape & Reel (TR)
Package / Case: 28-SOIC (0.295", 7.50mm Width)
Mounting Type: Surface Mount
Operating Temperature: -40°C ~ 150°C (TJ)
Voltage - Supply: 10V ~ 20V
Input Type: Inverting
High Side Voltage - Max (Bootstrap): 600 V
Supplier Device Package: 28-SOIC
Rise / Fall Time (Typ): 80ns, 35ns
Channel Type: 3-Phase
Driven Configuration: Half-Bridge
Number of Drivers: 6
Gate Type: IGBT, MOSFET (N-Channel)
Logic Voltage - VIL, VIH: 0.8V, 2.2V
Current - Peak Output (Source, Sink): 250mA, 500mA
Part Status: Obsolete
DigiKey Programmable: Not Verified
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В кошику
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| IRS2332STRPBF |
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Виробник: Infineon Technologies
Description: IC GATE DRVR HALF-BRIDGE 28SOIC
Packaging: Tape & Reel (TR)
Package / Case: 28-SOIC (0.295", 7.50mm Width)
Mounting Type: Surface Mount
Operating Temperature: -40°C ~ 150°C (TJ)
Voltage - Supply: 10V ~ 20V
Input Type: Inverting
High Side Voltage - Max (Bootstrap): 600 V
Supplier Device Package: 28-SOIC
Rise / Fall Time (Typ): 80ns, 35ns
Channel Type: 3-Phase
Driven Configuration: Half-Bridge
Number of Drivers: 6
Gate Type: IGBT, MOSFET (N-Channel)
Logic Voltage - VIL, VIH: 0.8V, 2.2V
Current - Peak Output (Source, Sink): 250mA, 500mA
Part Status: Obsolete
DigiKey Programmable: Not Verified
Description: IC GATE DRVR HALF-BRIDGE 28SOIC
Packaging: Tape & Reel (TR)
Package / Case: 28-SOIC (0.295", 7.50mm Width)
Mounting Type: Surface Mount
Operating Temperature: -40°C ~ 150°C (TJ)
Voltage - Supply: 10V ~ 20V
Input Type: Inverting
High Side Voltage - Max (Bootstrap): 600 V
Supplier Device Package: 28-SOIC
Rise / Fall Time (Typ): 80ns, 35ns
Channel Type: 3-Phase
Driven Configuration: Half-Bridge
Number of Drivers: 6
Gate Type: IGBT, MOSFET (N-Channel)
Logic Voltage - VIL, VIH: 0.8V, 2.2V
Current - Peak Output (Source, Sink): 250mA, 500mA
Part Status: Obsolete
DigiKey Programmable: Not Verified
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В кошику
од. на суму грн.
| IRS26072DSTRPBF |
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Виробник: Infineon Technologies
Description: IC GATE DRVR HALF-BRIDGE 8SOIC
Packaging: Tape & Reel (TR)
Package / Case: 8-SOIC (0.154", 3.90mm Width)
Mounting Type: Surface Mount
Operating Temperature: -40°C ~ 150°C (TJ)
Voltage - Supply: 10V ~ 20V
Input Type: Non-Inverting
High Side Voltage - Max (Bootstrap): 600 V
Supplier Device Package: 8-SOIC
Rise / Fall Time (Typ): 150ns, 50ns
Channel Type: Independent
Driven Configuration: Half-Bridge
Number of Drivers: 2
Gate Type: IGBT, MOSFET (N-Channel)
Logic Voltage - VIL, VIH: 0.8V, 2.5V
Current - Peak Output (Source, Sink): 200mA, 350mA
Part Status: Obsolete
DigiKey Programmable: Not Verified
Description: IC GATE DRVR HALF-BRIDGE 8SOIC
Packaging: Tape & Reel (TR)
Package / Case: 8-SOIC (0.154", 3.90mm Width)
Mounting Type: Surface Mount
Operating Temperature: -40°C ~ 150°C (TJ)
Voltage - Supply: 10V ~ 20V
Input Type: Non-Inverting
High Side Voltage - Max (Bootstrap): 600 V
Supplier Device Package: 8-SOIC
Rise / Fall Time (Typ): 150ns, 50ns
Channel Type: Independent
Driven Configuration: Half-Bridge
Number of Drivers: 2
Gate Type: IGBT, MOSFET (N-Channel)
Logic Voltage - VIL, VIH: 0.8V, 2.5V
Current - Peak Output (Source, Sink): 200mA, 350mA
Part Status: Obsolete
DigiKey Programmable: Not Verified
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В кошику
од. на суму грн.
| IRS4427STRPBF |
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Виробник: Infineon Technologies
Description: IC GATE DRVR LOW-SIDE 8SOIC
Packaging: Tape & Reel (TR)
Package / Case: 8-SOIC (0.154", 3.90mm Width)
Mounting Type: Surface Mount
Operating Temperature: -40°C ~ 150°C (TJ)
Voltage - Supply: 6V ~ 20V
Input Type: Non-Inverting
Supplier Device Package: 8-SOIC
Rise / Fall Time (Typ): 25ns, 25ns
Channel Type: Independent
Driven Configuration: Low-Side
Number of Drivers: 2
Gate Type: IGBT, MOSFET (N-Channel)
Logic Voltage - VIL, VIH: 0.8V, 2.5V
Current - Peak Output (Source, Sink): 2.3A, 3.3A
Part Status: Active
DigiKey Programmable: Not Verified
Description: IC GATE DRVR LOW-SIDE 8SOIC
Packaging: Tape & Reel (TR)
Package / Case: 8-SOIC (0.154", 3.90mm Width)
Mounting Type: Surface Mount
Operating Temperature: -40°C ~ 150°C (TJ)
Voltage - Supply: 6V ~ 20V
Input Type: Non-Inverting
Supplier Device Package: 8-SOIC
Rise / Fall Time (Typ): 25ns, 25ns
Channel Type: Independent
Driven Configuration: Low-Side
Number of Drivers: 2
Gate Type: IGBT, MOSFET (N-Channel)
Logic Voltage - VIL, VIH: 0.8V, 2.5V
Current - Peak Output (Source, Sink): 2.3A, 3.3A
Part Status: Active
DigiKey Programmable: Not Verified
на замовлення 2350 шт:
термін постачання 21-31 дні (днів)
| IRU3037ACSTR |
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Виробник: Infineon Technologies
Description: IC REG CTRLR BUCK/BOOST 8SOIC
Packaging: Tape & Reel (TR)
Package / Case: 8-SOIC (0.154", 3.90mm Width)
Output Type: Transistor Driver
Mounting Type: Surface Mount
Function: Step-Up, Step-Down
Operating Temperature: 0°C ~ 70°C (TA)
Output Configuration: Positive
Frequency - Switching: 400kHz
Topology: Buck, Boost
Voltage - Supply (Vcc/Vdd): 4.2V ~ 25V
Supplier Device Package: 8-SOIC
Synchronous Rectifier: Yes
Control Features: Enable, Soft Start
Output Phases: 1
Duty Cycle (Max): 90%
Clock Sync: No
Part Status: Obsolete
Number of Outputs: 1
Description: IC REG CTRLR BUCK/BOOST 8SOIC
Packaging: Tape & Reel (TR)
Package / Case: 8-SOIC (0.154", 3.90mm Width)
Output Type: Transistor Driver
Mounting Type: Surface Mount
Function: Step-Up, Step-Down
Operating Temperature: 0°C ~ 70°C (TA)
Output Configuration: Positive
Frequency - Switching: 400kHz
Topology: Buck, Boost
Voltage - Supply (Vcc/Vdd): 4.2V ~ 25V
Supplier Device Package: 8-SOIC
Synchronous Rectifier: Yes
Control Features: Enable, Soft Start
Output Phases: 1
Duty Cycle (Max): 90%
Clock Sync: No
Part Status: Obsolete
Number of Outputs: 1
товару немає в наявності
Мінімальне замовлення: 2500 шт
В кошику
од. на суму грн.
| IPB60R190C6ATMA1 |
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Виробник: Infineon Technologies
Description: MOSFET N-CH 600V 20.2A D2PAK
Packaging: Cut Tape (CT)
Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 20.2A (Tc)
Rds On (Max) @ Id, Vgs: 190mOhm @ 9.5A, 10V
Power Dissipation (Max): 151W (Tc)
Vgs(th) (Max) @ Id: 3.5V @ 630µA
Supplier Device Package: PG-TO263-3
Part Status: Not For New Designs
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 600 V
Gate Charge (Qg) (Max) @ Vgs: 63 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 1400 pF @ 100 V
Description: MOSFET N-CH 600V 20.2A D2PAK
Packaging: Cut Tape (CT)
Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 20.2A (Tc)
Rds On (Max) @ Id, Vgs: 190mOhm @ 9.5A, 10V
Power Dissipation (Max): 151W (Tc)
Vgs(th) (Max) @ Id: 3.5V @ 630µA
Supplier Device Package: PG-TO263-3
Part Status: Not For New Designs
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 600 V
Gate Charge (Qg) (Max) @ Vgs: 63 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 1400 pF @ 100 V
на замовлення 1064 шт:
термін постачання 21-31 дні (днів)
| Кількість | Ціна без ПДВ |
|---|---|
| 2+ | 247.97 грн |
| 10+ | 156.11 грн |
| 100+ | 109.22 грн |
| 500+ | 90.25 грн |
| CY14B101KA-ZS45XI |
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Виробник: Infineon Technologies
Description: IC NVSRAM 1MBIT PAR 44TSOP II
Packaging: Tray
Package / Case: 44-TSOP (0.400", 10.16mm Width)
Mounting Type: Surface Mount
Memory Size: 1Mbit
Memory Type: Non-Volatile
Operating Temperature: -40°C ~ 85°C (TA)
Voltage - Supply: 2.7V ~ 3.6V
Technology: NVSRAM (Non-Volatile SRAM)
Memory Format: NVSRAM
Supplier Device Package: 44-TSOP II
Part Status: Active
Write Cycle Time - Word, Page: 45ns
Memory Interface: Parallel
Access Time: 45 ns
Memory Organization: 128K x 8
DigiKey Programmable: Not Verified
Description: IC NVSRAM 1MBIT PAR 44TSOP II
Packaging: Tray
Package / Case: 44-TSOP (0.400", 10.16mm Width)
Mounting Type: Surface Mount
Memory Size: 1Mbit
Memory Type: Non-Volatile
Operating Temperature: -40°C ~ 85°C (TA)
Voltage - Supply: 2.7V ~ 3.6V
Technology: NVSRAM (Non-Volatile SRAM)
Memory Format: NVSRAM
Supplier Device Package: 44-TSOP II
Part Status: Active
Write Cycle Time - Word, Page: 45ns
Memory Interface: Parallel
Access Time: 45 ns
Memory Organization: 128K x 8
DigiKey Programmable: Not Verified
на замовлення 100 шт:
термін постачання 21-31 дні (днів)
| Кількість | Ціна без ПДВ |
|---|---|
| 1+ | 2494.43 грн |
| 10+ | 2258.47 грн |
| 25+ | 2180.09 грн |
| 40+ | 1981.23 грн |
| CY14B101LA-SP25XI |
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Виробник: Infineon Technologies
Description: IC NVSRAM 1MBIT PARALLEL 48SSOP
Packaging: Tube
Package / Case: 48-BSSOP (0.295", 7.50mm Width)
Mounting Type: Surface Mount
Memory Size: 1Mbit
Memory Type: Non-Volatile
Operating Temperature: -40°C ~ 85°C (TA)
Voltage - Supply: 2.7V ~ 3.6V
Technology: NVSRAM (Non-Volatile SRAM)
Memory Format: NVSRAM
Supplier Device Package: 48-SSOP
Write Cycle Time - Word, Page: 25ns
Memory Interface: Parallel
Access Time: 25 ns
Memory Organization: 128K x 8
DigiKey Programmable: Not Verified
Description: IC NVSRAM 1MBIT PARALLEL 48SSOP
Packaging: Tube
Package / Case: 48-BSSOP (0.295", 7.50mm Width)
Mounting Type: Surface Mount
Memory Size: 1Mbit
Memory Type: Non-Volatile
Operating Temperature: -40°C ~ 85°C (TA)
Voltage - Supply: 2.7V ~ 3.6V
Technology: NVSRAM (Non-Volatile SRAM)
Memory Format: NVSRAM
Supplier Device Package: 48-SSOP
Write Cycle Time - Word, Page: 25ns
Memory Interface: Parallel
Access Time: 25 ns
Memory Organization: 128K x 8
DigiKey Programmable: Not Verified
на замовлення 144 шт:
термін постачання 21-31 дні (днів)
| Кількість | Ціна без ПДВ |
|---|---|
| 1+ | 3587.82 грн |
| 10+ | 3193.69 грн |
| 30+ | 3070.49 грн |
| 60+ | 2809.57 грн |
| 120+ | 2738.70 грн |
| CY14B101LA-SP45XI |
![]() |
Виробник: Infineon Technologies
Description: IC NVSRAM 1MBIT PARALLEL 48SSOP
Packaging: Tube
Package / Case: 48-BSSOP (0.295", 7.50mm Width)
Mounting Type: Surface Mount
Memory Size: 1Mbit
Memory Type: Non-Volatile
Operating Temperature: -40°C ~ 85°C (TA)
Voltage - Supply: 2.7V ~ 3.6V
Technology: NVSRAM (Non-Volatile SRAM)
Memory Format: NVSRAM
Supplier Device Package: 48-SSOP
Write Cycle Time - Word, Page: 45ns
Memory Interface: Parallel
Access Time: 45 ns
Memory Organization: 128K x 8
DigiKey Programmable: Not Verified
Description: IC NVSRAM 1MBIT PARALLEL 48SSOP
Packaging: Tube
Package / Case: 48-BSSOP (0.295", 7.50mm Width)
Mounting Type: Surface Mount
Memory Size: 1Mbit
Memory Type: Non-Volatile
Operating Temperature: -40°C ~ 85°C (TA)
Voltage - Supply: 2.7V ~ 3.6V
Technology: NVSRAM (Non-Volatile SRAM)
Memory Format: NVSRAM
Supplier Device Package: 48-SSOP
Write Cycle Time - Word, Page: 45ns
Memory Interface: Parallel
Access Time: 45 ns
Memory Organization: 128K x 8
DigiKey Programmable: Not Verified
на замовлення 812 шт:
термін постачання 21-31 дні (днів)
| Кількість | Ціна без ПДВ |
|---|---|
| 1+ | 2374.32 грн |
| 10+ | 2028.94 грн |
| 30+ | 1916.31 грн |
| 60+ | 1734.67 грн |
| 120+ | 1673.12 грн |
| 270+ | 1603.78 грн |
| CY14B101LA-ZS25XI |
![]() |
Виробник: Infineon Technologies
Description: IC NVSRAM 1MBIT PAR 44TSOP II
Packaging: Tray
Package / Case: 44-TSOP (0.400", 10.16mm Width)
Mounting Type: Surface Mount
Memory Size: 1Mbit
Memory Type: Non-Volatile
Operating Temperature: -40°C ~ 85°C (TA)
Voltage - Supply: 2.7V ~ 3.6V
Technology: NVSRAM (Non-Volatile SRAM)
Memory Format: NVSRAM
Supplier Device Package: 44-TSOP II
Write Cycle Time - Word, Page: 25ns
Memory Interface: Parallel
Access Time: 25 ns
Memory Organization: 128K x 8
DigiKey Programmable: Not Verified
Description: IC NVSRAM 1MBIT PAR 44TSOP II
Packaging: Tray
Package / Case: 44-TSOP (0.400", 10.16mm Width)
Mounting Type: Surface Mount
Memory Size: 1Mbit
Memory Type: Non-Volatile
Operating Temperature: -40°C ~ 85°C (TA)
Voltage - Supply: 2.7V ~ 3.6V
Technology: NVSRAM (Non-Volatile SRAM)
Memory Format: NVSRAM
Supplier Device Package: 44-TSOP II
Write Cycle Time - Word, Page: 25ns
Memory Interface: Parallel
Access Time: 25 ns
Memory Organization: 128K x 8
DigiKey Programmable: Not Verified
товару немає в наявності
Мінімальне замовлення: 270 шт
В кошику
од. на суму грн.
| CY14B101LA-ZS45XI |
![]() |
Виробник: Infineon Technologies
Description: IC NVSRAM 1MBIT PAR 44TSOP II
Packaging: Tray
Package / Case: 44-TSOP (0.400", 10.16mm Width)
Mounting Type: Surface Mount
Memory Size: 1Mbit
Memory Type: Non-Volatile
Operating Temperature: -40°C ~ 85°C (TA)
Voltage - Supply: 2.7V ~ 3.6V
Technology: NVSRAM (Non-Volatile SRAM)
Memory Format: NVSRAM
Supplier Device Package: 44-TSOP II
Write Cycle Time - Word, Page: 45ns
Memory Interface: Parallel
Access Time: 45 ns
Memory Organization: 128K x 8
DigiKey Programmable: Not Verified
Description: IC NVSRAM 1MBIT PAR 44TSOP II
Packaging: Tray
Package / Case: 44-TSOP (0.400", 10.16mm Width)
Mounting Type: Surface Mount
Memory Size: 1Mbit
Memory Type: Non-Volatile
Operating Temperature: -40°C ~ 85°C (TA)
Voltage - Supply: 2.7V ~ 3.6V
Technology: NVSRAM (Non-Volatile SRAM)
Memory Format: NVSRAM
Supplier Device Package: 44-TSOP II
Write Cycle Time - Word, Page: 45ns
Memory Interface: Parallel
Access Time: 45 ns
Memory Organization: 128K x 8
DigiKey Programmable: Not Verified
на замовлення 270 шт:
термін постачання 21-31 дні (днів)
| Кількість | Ціна без ПДВ |
|---|---|
| 1+ | 1923.32 грн |
| 10+ | 1714.41 грн |
| 25+ | 1659.92 грн |
| 50+ | 1519.44 грн |
| 135+ | 1465.31 грн |
| 270+ | 1428.23 грн |
| CY14B101NA-ZS45XI |
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Виробник: Infineon Technologies
Description: IC NVSRAM 1MBIT PAR 44TSOP II
Packaging: Tray
Package / Case: 44-TSOP (0.400", 10.16mm Width)
Mounting Type: Surface Mount
Memory Size: 1Mbit
Memory Type: Non-Volatile
Operating Temperature: -40°C ~ 85°C (TA)
Voltage - Supply: 2.7V ~ 3.6V
Technology: NVSRAM (Non-Volatile SRAM)
Memory Format: NVSRAM
Supplier Device Package: 44-TSOP II
Write Cycle Time - Word, Page: 45ns
Memory Interface: Parallel
Access Time: 45 ns
Memory Organization: 64K x 16
DigiKey Programmable: Not Verified
Description: IC NVSRAM 1MBIT PAR 44TSOP II
Packaging: Tray
Package / Case: 44-TSOP (0.400", 10.16mm Width)
Mounting Type: Surface Mount
Memory Size: 1Mbit
Memory Type: Non-Volatile
Operating Temperature: -40°C ~ 85°C (TA)
Voltage - Supply: 2.7V ~ 3.6V
Technology: NVSRAM (Non-Volatile SRAM)
Memory Format: NVSRAM
Supplier Device Package: 44-TSOP II
Write Cycle Time - Word, Page: 45ns
Memory Interface: Parallel
Access Time: 45 ns
Memory Organization: 64K x 16
DigiKey Programmable: Not Verified
на замовлення 601 шт:
термін постачання 21-31 дні (днів)
| Кількість | Ціна без ПДВ |
|---|---|
| 1+ | 1534.32 грн |
| 10+ | 1463.98 грн |
| CY14B108N-ZSP25XI |
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Виробник: Infineon Technologies
Description: IC NVSRAM 8MBIT PAR 54TSOP II
Packaging: Tray
Package / Case: 54-TSOP (0.400", 10.16mm Width)
Mounting Type: Surface Mount
Memory Size: 8Mbit
Memory Type: Non-Volatile
Operating Temperature: -40°C ~ 85°C (TA)
Voltage - Supply: 2.7V ~ 3.6V
Technology: NVSRAM (Non-Volatile SRAM)
Memory Format: NVSRAM
Supplier Device Package: 54-TSOP II
Write Cycle Time - Word, Page: 25ns
Memory Interface: Parallel
Access Time: 25 ns
Memory Organization: 512K x 16
DigiKey Programmable: Not Verified
Description: IC NVSRAM 8MBIT PAR 54TSOP II
Packaging: Tray
Package / Case: 54-TSOP (0.400", 10.16mm Width)
Mounting Type: Surface Mount
Memory Size: 8Mbit
Memory Type: Non-Volatile
Operating Temperature: -40°C ~ 85°C (TA)
Voltage - Supply: 2.7V ~ 3.6V
Technology: NVSRAM (Non-Volatile SRAM)
Memory Format: NVSRAM
Supplier Device Package: 54-TSOP II
Write Cycle Time - Word, Page: 25ns
Memory Interface: Parallel
Access Time: 25 ns
Memory Organization: 512K x 16
DigiKey Programmable: Not Verified
на замовлення 157 шт:
термін постачання 21-31 дні (днів)
| Кількість | Ціна без ПДВ |
|---|---|
| 1+ | 4434.02 грн |
| 10+ | 3790.21 грн |
| 25+ | 3613.94 грн |
| 40+ | 3309.57 грн |
| 108+ | 3142.46 грн |
| CY14B256KA-SP45XI |
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Виробник: Infineon Technologies
Description: IC NVSRAM 256KBIT PAR 48SSOP
Packaging: Tube
Package / Case: 48-BSSOP (0.295", 7.50mm Width)
Mounting Type: Surface Mount
Memory Size: 256Kbit
Memory Type: Non-Volatile
Operating Temperature: -40°C ~ 85°C (TA)
Voltage - Supply: 2.7V ~ 3.6V
Technology: NVSRAM (Non-Volatile SRAM)
Memory Format: NVSRAM
Supplier Device Package: 48-SSOP
Write Cycle Time - Word, Page: 45ns
Memory Interface: Parallel
Access Time: 45 ns
Memory Organization: 32K x 8
DigiKey Programmable: Not Verified
Description: IC NVSRAM 256KBIT PAR 48SSOP
Packaging: Tube
Package / Case: 48-BSSOP (0.295", 7.50mm Width)
Mounting Type: Surface Mount
Memory Size: 256Kbit
Memory Type: Non-Volatile
Operating Temperature: -40°C ~ 85°C (TA)
Voltage - Supply: 2.7V ~ 3.6V
Technology: NVSRAM (Non-Volatile SRAM)
Memory Format: NVSRAM
Supplier Device Package: 48-SSOP
Write Cycle Time - Word, Page: 45ns
Memory Interface: Parallel
Access Time: 45 ns
Memory Organization: 32K x 8
DigiKey Programmable: Not Verified
на замовлення 148 шт:
термін постачання 21-31 дні (днів)
| Кількість | Ціна без ПДВ |
|---|---|
| 1+ | 1687.75 грн |
| 10+ | 1505.70 грн |
| 30+ | 1448.61 грн |
| 60+ | 1325.99 грн |
| 120+ | 1292.90 грн |
| CY14B256LA-SP45XI |
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Виробник: Infineon Technologies
Description: IC NVSRAM 256KBIT PAR 48SSOP
Packaging: Tube
Package / Case: 48-BSSOP (0.295", 7.50mm Width)
Mounting Type: Surface Mount
Memory Size: 256Kbit
Memory Type: Non-Volatile
Operating Temperature: -40°C ~ 85°C (TA)
Voltage - Supply: 2.7V ~ 3.6V
Technology: NVSRAM (Non-Volatile SRAM)
Memory Format: NVSRAM
Supplier Device Package: 48-SSOP
Part Status: Active
Write Cycle Time - Word, Page: 45ns
Memory Interface: Parallel
Access Time: 45 ns
Memory Organization: 32K x 8
DigiKey Programmable: Not Verified
Description: IC NVSRAM 256KBIT PAR 48SSOP
Packaging: Tube
Package / Case: 48-BSSOP (0.295", 7.50mm Width)
Mounting Type: Surface Mount
Memory Size: 256Kbit
Memory Type: Non-Volatile
Operating Temperature: -40°C ~ 85°C (TA)
Voltage - Supply: 2.7V ~ 3.6V
Technology: NVSRAM (Non-Volatile SRAM)
Memory Format: NVSRAM
Supplier Device Package: 48-SSOP
Part Status: Active
Write Cycle Time - Word, Page: 45ns
Memory Interface: Parallel
Access Time: 45 ns
Memory Organization: 32K x 8
DigiKey Programmable: Not Verified
на замовлення 183 шт:
термін постачання 21-31 дні (днів)
| Кількість | Ціна без ПДВ |
|---|---|
| 1+ | 1120.52 грн |
| 10+ | 1000.22 грн |
| 30+ | 962.68 грн |
| 60+ | 881.39 грн |
| 120+ | 859.53 грн |
| CY2VC511ZXC |
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Виробник: Infineon Technologies
Description: IC CLOCK GENERATOR 16TSSOP
Packaging: Tube
Package / Case: 16-TSSOP (0.173", 4.40mm Width)
Mounting Type: Surface Mount
Output: LVCMOS
Frequency - Max: 27MHz
Type: Clock Generator
Input: LVCMOS
Operating Temperature: 0°C ~ 70°C
Voltage - Supply: 3.135V ~ 3.465V
Ratio - Input:Output: 1:1
Differential - Input:Output: No/No
Supplier Device Package: 16-TSSOP
PLL: Yes
Divider/Multiplier: No/No
Number of Circuits: 1
DigiKey Programmable: Not Verified
Description: IC CLOCK GENERATOR 16TSSOP
Packaging: Tube
Package / Case: 16-TSSOP (0.173", 4.40mm Width)
Mounting Type: Surface Mount
Output: LVCMOS
Frequency - Max: 27MHz
Type: Clock Generator
Input: LVCMOS
Operating Temperature: 0°C ~ 70°C
Voltage - Supply: 3.135V ~ 3.465V
Ratio - Input:Output: 1:1
Differential - Input:Output: No/No
Supplier Device Package: 16-TSSOP
PLL: Yes
Divider/Multiplier: No/No
Number of Circuits: 1
DigiKey Programmable: Not Verified
товару немає в наявності
Мінімальне замовлення: 960 шт
В кошику
од. на суму грн.
| CY7C1071DV33-12BAXI |
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Виробник: Infineon Technologies
Description: IC SRAM 32MBIT PARALLEL 48FBGA
Packaging: Tray
Package / Case: 48-TFBGA
Mounting Type: Surface Mount
Memory Size: 32Mbit
Memory Type: Volatile
Operating Temperature: -40°C ~ 85°C (TA)
Voltage - Supply: 3V ~ 3.6V
Technology: SRAM - Asynchronous
Memory Format: SRAM
Supplier Device Package: 48-FBGA (8x9.5)
Part Status: Active
Write Cycle Time - Word, Page: 12ns
Memory Interface: Parallel
Access Time: 12 ns
Memory Organization: 2M x 16
DigiKey Programmable: Not Verified
Description: IC SRAM 32MBIT PARALLEL 48FBGA
Packaging: Tray
Package / Case: 48-TFBGA
Mounting Type: Surface Mount
Memory Size: 32Mbit
Memory Type: Volatile
Operating Temperature: -40°C ~ 85°C (TA)
Voltage - Supply: 3V ~ 3.6V
Technology: SRAM - Asynchronous
Memory Format: SRAM
Supplier Device Package: 48-FBGA (8x9.5)
Part Status: Active
Write Cycle Time - Word, Page: 12ns
Memory Interface: Parallel
Access Time: 12 ns
Memory Organization: 2M x 16
DigiKey Programmable: Not Verified
на замовлення 392 шт:
термін постачання 21-31 дні (днів)
| Кількість | Ціна без ПДВ |
|---|---|
| 1+ | 9179.56 грн |
| 10+ | 7842.27 грн |
| 25+ | 7476.55 грн |
| 40+ | 6846.41 грн |
| CY7C11481KV18-400BZXC |
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Виробник: Infineon Technologies
Description: IC SRAM 18MBIT PARALLEL 165FBGA
Packaging: Tray
Package / Case: 165-LBGA
Mounting Type: Surface Mount
Memory Size: 18Mbit
Memory Type: Volatile
Operating Temperature: 0°C ~ 70°C (TA)
Voltage - Supply: 1.7V ~ 1.9V
Technology: SRAM - Synchronous, DDR II+
Clock Frequency: 400 MHz
Memory Format: SRAM
Supplier Device Package: 165-FBGA (13x15)
Part Status: Obsolete
Memory Interface: Parallel
Memory Organization: 1M x 18
DigiKey Programmable: Not Verified
Description: IC SRAM 18MBIT PARALLEL 165FBGA
Packaging: Tray
Package / Case: 165-LBGA
Mounting Type: Surface Mount
Memory Size: 18Mbit
Memory Type: Volatile
Operating Temperature: 0°C ~ 70°C (TA)
Voltage - Supply: 1.7V ~ 1.9V
Technology: SRAM - Synchronous, DDR II+
Clock Frequency: 400 MHz
Memory Format: SRAM
Supplier Device Package: 165-FBGA (13x15)
Part Status: Obsolete
Memory Interface: Parallel
Memory Organization: 1M x 18
DigiKey Programmable: Not Verified
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| CY7C11701KV18-400BZXC |
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Виробник: Infineon Technologies
Description: IC SRAM 18MBIT PARALLEL 165FBGA
Packaging: Tray
Package / Case: 165-LBGA
Mounting Type: Surface Mount
Memory Size: 18Mbit
Memory Type: Volatile
Operating Temperature: 0°C ~ 70°C (TA)
Voltage - Supply: 1.7V ~ 1.9V
Technology: SRAM - Synchronous, DDR II+
Clock Frequency: 400 MHz
Memory Format: SRAM
Supplier Device Package: 165-FBGA (13x15)
Part Status: Obsolete
Memory Interface: Parallel
Memory Organization: 512K x 36
DigiKey Programmable: Not Verified
Description: IC SRAM 18MBIT PARALLEL 165FBGA
Packaging: Tray
Package / Case: 165-LBGA
Mounting Type: Surface Mount
Memory Size: 18Mbit
Memory Type: Volatile
Operating Temperature: 0°C ~ 70°C (TA)
Voltage - Supply: 1.7V ~ 1.9V
Technology: SRAM - Synchronous, DDR II+
Clock Frequency: 400 MHz
Memory Format: SRAM
Supplier Device Package: 165-FBGA (13x15)
Part Status: Obsolete
Memory Interface: Parallel
Memory Organization: 512K x 36
DigiKey Programmable: Not Verified
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| CY7C12681KV18-450BZXC |
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Виробник: Infineon Technologies
Description: IC SRAM 36MBIT PAR 165FBGA
Packaging: Tray
Package / Case: 165-LBGA
Mounting Type: Surface Mount
Memory Size: 36Mbit
Memory Type: Volatile
Operating Temperature: 0°C ~ 70°C (TA)
Voltage - Supply: 1.7V ~ 1.9V
Technology: SRAM - Synchronous, DDR II+
Clock Frequency: 450 MHz
Memory Format: SRAM
Supplier Device Package: 165-FBGA (13x15)
Memory Interface: Parallel
Memory Organization: 2M x 18
DigiKey Programmable: Not Verified
Description: IC SRAM 36MBIT PAR 165FBGA
Packaging: Tray
Package / Case: 165-LBGA
Mounting Type: Surface Mount
Memory Size: 36Mbit
Memory Type: Volatile
Operating Temperature: 0°C ~ 70°C (TA)
Voltage - Supply: 1.7V ~ 1.9V
Technology: SRAM - Synchronous, DDR II+
Clock Frequency: 450 MHz
Memory Format: SRAM
Supplier Device Package: 165-FBGA (13x15)
Memory Interface: Parallel
Memory Organization: 2M x 18
DigiKey Programmable: Not Verified
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| CY7C1565KV18-450BZXC |
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Виробник: Infineon Technologies
Description: IC SRAM 72MBIT PAR 165FBGA
Packaging: Tray
Package / Case: 165-LBGA
Mounting Type: Surface Mount
Memory Size: 72Mbit
Memory Type: Volatile
Operating Temperature: 0°C ~ 70°C (TA)
Voltage - Supply: 1.7V ~ 1.9V
Technology: SRAM - Synchronous, QDR II+
Clock Frequency: 450 MHz
Memory Format: SRAM
Supplier Device Package: 165-FBGA (13x15)
Memory Interface: Parallel
Memory Organization: 2M x 36
DigiKey Programmable: Not Verified
Description: IC SRAM 72MBIT PAR 165FBGA
Packaging: Tray
Package / Case: 165-LBGA
Mounting Type: Surface Mount
Memory Size: 72Mbit
Memory Type: Volatile
Operating Temperature: 0°C ~ 70°C (TA)
Voltage - Supply: 1.7V ~ 1.9V
Technology: SRAM - Synchronous, QDR II+
Clock Frequency: 450 MHz
Memory Format: SRAM
Supplier Device Package: 165-FBGA (13x15)
Memory Interface: Parallel
Memory Organization: 2M x 36
DigiKey Programmable: Not Verified
товару немає в наявності
Мінімальне замовлення: 136 шт
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| CY7C1570KV18-450BZXC |
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Виробник: Infineon Technologies
Description: IC SRAM 72MBIT PAR 165FBGA
Packaging: Tray
Package / Case: 165-LBGA
Mounting Type: Surface Mount
Memory Size: 72Mbit
Memory Type: Volatile
Operating Temperature: 0°C ~ 70°C (TA)
Voltage - Supply: 1.7V ~ 1.9V
Technology: SRAM - Synchronous, DDR II+
Clock Frequency: 450 MHz
Memory Format: SRAM
Supplier Device Package: 165-FBGA (13x15)
Part Status: Active
Memory Interface: Parallel
Memory Organization: 2M x 36
DigiKey Programmable: Not Verified
Description: IC SRAM 72MBIT PAR 165FBGA
Packaging: Tray
Package / Case: 165-LBGA
Mounting Type: Surface Mount
Memory Size: 72Mbit
Memory Type: Volatile
Operating Temperature: 0°C ~ 70°C (TA)
Voltage - Supply: 1.7V ~ 1.9V
Technology: SRAM - Synchronous, DDR II+
Clock Frequency: 450 MHz
Memory Format: SRAM
Supplier Device Package: 165-FBGA (13x15)
Part Status: Active
Memory Interface: Parallel
Memory Organization: 2M x 36
DigiKey Programmable: Not Verified
товару немає в наявності
Мінімальне замовлення: 680 шт
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| CY7C21701KV18-400BZXC |
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Виробник: Infineon Technologies
Description: IC SRAM 18MBIT PARALLEL 165FBGA
Description: IC SRAM 18MBIT PARALLEL 165FBGA
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| CY7C64215-56LTXI |
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Виробник: Infineon Technologies
Description: IC USB CTLR ENCORE III 56QFN
DigiKey Programmable: Not Verified
Number of I/O: 50
Supplier Device Package: 56-QFN-EP (8x8)
Core Processor: M8C
Applications: USB Microcontroller
Program Memory Type: FLASH (16kB)
Controller Series: CY7C642xx
Voltage - Supply: 3V ~ 5.25V
Operating Temperature: -40°C ~ 85°C
RAM Size: 1K x 8
Interface: I2C, USB
Mounting Type: Surface Mount
Package / Case: 56-VFQFN Exposed Pad
Packaging: Tray
Description: IC USB CTLR ENCORE III 56QFN
DigiKey Programmable: Not Verified
Number of I/O: 50
Supplier Device Package: 56-QFN-EP (8x8)
Core Processor: M8C
Applications: USB Microcontroller
Program Memory Type: FLASH (16kB)
Controller Series: CY7C642xx
Voltage - Supply: 3V ~ 5.25V
Operating Temperature: -40°C ~ 85°C
RAM Size: 1K x 8
Interface: I2C, USB
Mounting Type: Surface Mount
Package / Case: 56-VFQFN Exposed Pad
Packaging: Tray
товару немає в наявності
Мінімальне замовлення: 2600 шт
В кошику
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| CY7C65621-56LTXC |
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Виробник: Infineon Technologies
Description: IC USB CTLR 2.0 2-PORT AEC 56QFN
DigiKey Programmable: Not Verified
Part Status: Active
Supplier Device Package: 56-QFN (8x8)
Standards: USB 2.0
Protocol: USB
Voltage - Supply: 3.15V ~ 3.45V
Operating Temperature: 0°C ~ 70°C
Interface: USB
Function: Hub Controller
Package / Case: 56-VFQFN Exposed Pad
Packaging: Tray
Description: IC USB CTLR 2.0 2-PORT AEC 56QFN
DigiKey Programmable: Not Verified
Part Status: Active
Supplier Device Package: 56-QFN (8x8)
Standards: USB 2.0
Protocol: USB
Voltage - Supply: 3.15V ~ 3.45V
Operating Temperature: 0°C ~ 70°C
Interface: USB
Function: Hub Controller
Package / Case: 56-VFQFN Exposed Pad
Packaging: Tray
товару немає в наявності
Мінімальне замовлення: 2600 шт
В кошику
од. на суму грн.
| CY8C20446H-24LQXI |
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Виробник: Infineon Technologies
Description: IC PSOC CAPSENSE 24MHZ 32QFN
Packaging: Tray
Package / Case: 32-UFQFN Exposed Pad
Mounting Type: Surface Mount
Interface: I2C, SPI
RAM Size: 2K x 8
Operating Temperature: -40°C ~ 85°C
Voltage - Supply: 1.71V ~ 5.5V
Controller Series: CY8C20xx6
Program Memory Type: FLASH (16kB)
Applications: Capacitive Sensing
Core Processor: M8C
Supplier Device Package: 32-QFN (5x5)
Number of I/O: 28
DigiKey Programmable: Not Verified
Description: IC PSOC CAPSENSE 24MHZ 32QFN
Packaging: Tray
Package / Case: 32-UFQFN Exposed Pad
Mounting Type: Surface Mount
Interface: I2C, SPI
RAM Size: 2K x 8
Operating Temperature: -40°C ~ 85°C
Voltage - Supply: 1.71V ~ 5.5V
Controller Series: CY8C20xx6
Program Memory Type: FLASH (16kB)
Applications: Capacitive Sensing
Core Processor: M8C
Supplier Device Package: 32-QFN (5x5)
Number of I/O: 28
DigiKey Programmable: Not Verified
на замовлення 15 шт:
термін постачання 21-31 дні (днів)
| Кількість | Ціна без ПДВ |
|---|---|
| 2+ | 293.69 грн |
| 10+ | 214.98 грн |
| CY8C21345-24PVXA |
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Виробник: Infineon Technologies
Description: IC MCU 8BIT 8KB FLASH 28SSOP
Packaging: Tube
Package / Case: 28-SSOP (0.209", 5.30mm Width)
Mounting Type: Surface Mount
Speed: 24MHz
Program Memory Size: 8KB (8K x 8)
RAM Size: 512 x 8
Operating Temperature: -40°C ~ 85°C (TA)
Oscillator Type: Internal
Program Memory Type: FLASH
Core Processor: M8C
Data Converters: A/D 3x10b
Core Size: 8-Bit
Voltage - Supply (Vcc/Vdd): 3V ~ 5.25V
Connectivity: I2C, IrDA, SPI, UART/USART
Peripherals: LVD, POR, PWM, WDT
Supplier Device Package: 28-SSOP
Number of I/O: 24
DigiKey Programmable: Not Verified
Description: IC MCU 8BIT 8KB FLASH 28SSOP
Packaging: Tube
Package / Case: 28-SSOP (0.209", 5.30mm Width)
Mounting Type: Surface Mount
Speed: 24MHz
Program Memory Size: 8KB (8K x 8)
RAM Size: 512 x 8
Operating Temperature: -40°C ~ 85°C (TA)
Oscillator Type: Internal
Program Memory Type: FLASH
Core Processor: M8C
Data Converters: A/D 3x10b
Core Size: 8-Bit
Voltage - Supply (Vcc/Vdd): 3V ~ 5.25V
Connectivity: I2C, IrDA, SPI, UART/USART
Peripherals: LVD, POR, PWM, WDT
Supplier Device Package: 28-SSOP
Number of I/O: 24
DigiKey Programmable: Not Verified
товару немає в наявності
Мінімальне замовлення: 940 шт
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| CY8C24894-24LFXA |
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Виробник: Infineon Technologies
Description: IC MCU 8BIT 16KB FLASH 56QFN
Packaging: Tray
Package / Case: 56-VFQFN Exposed Pad
Mounting Type: Surface Mount
Speed: 24MHz
Program Memory Size: 16KB (16K x 8)
RAM Size: 1K x 8
Operating Temperature: -40°C ~ 85°C (TA)
Oscillator Type: Internal
Program Memory Type: FLASH
Core Processor: M8C
Data Converters: A/D 48x14b; D/A 2x9b
Core Size: 8-Bit
Voltage - Supply (Vcc/Vdd): 3V ~ 5.25V
Connectivity: I2C, SPI, UART/USART, USB
Peripherals: POR, PWM, WDT
Supplier Device Package: 56-QFN (8x8)
Number of I/O: 49
DigiKey Programmable: Not Verified
Description: IC MCU 8BIT 16KB FLASH 56QFN
Packaging: Tray
Package / Case: 56-VFQFN Exposed Pad
Mounting Type: Surface Mount
Speed: 24MHz
Program Memory Size: 16KB (16K x 8)
RAM Size: 1K x 8
Operating Temperature: -40°C ~ 85°C (TA)
Oscillator Type: Internal
Program Memory Type: FLASH
Core Processor: M8C
Data Converters: A/D 48x14b; D/A 2x9b
Core Size: 8-Bit
Voltage - Supply (Vcc/Vdd): 3V ~ 5.25V
Connectivity: I2C, SPI, UART/USART, USB
Peripherals: POR, PWM, WDT
Supplier Device Package: 56-QFN (8x8)
Number of I/O: 49
DigiKey Programmable: Not Verified
товару немає в наявності
Мінімальне замовлення: 260 шт
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| IR3837MTRPBF |
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Виробник: Infineon Technologies
Description: IC REG BUCK ADJ 14A 17PQFN
Description: IC REG BUCK ADJ 14A 17PQFN
товару немає в наявності
Мінімальне замовлення: 4000 шт
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од. на суму грн.



































