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BCR198E6393HTSA1 BCR198E6393HTSA1 Infineon Technologies bcr198series.pdf?folderId=db3a30431f848401011fcbf2ab4c04c4&fileId=db3a304320d39d590121e8552c2f65bb Description: TRANS PREBIAS PNP 50V SOT23
Packaging: Tape & Reel (TR)
Package / Case: TO-236-3, SC-59, SOT-23-3
Mounting Type: Surface Mount
Transistor Type: PNP - Pre-Biased
Vce Saturation (Max) @ Ib, Ic: 300mV @ 500µA, 10mA
Current - Collector Cutoff (Max): 100nA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce: 70 @ 5mA, 5V
Supplier Device Package: PG-SOT23
Current - Collector (Ic) (Max): 100 mA
Voltage - Collector Emitter Breakdown (Max): 50 V
Power - Max: 200 mW
Frequency - Transition: 190 MHz
Resistor - Base (R1): 47 kOhms
Resistor - Emitter Base (R2): 47 kOhms
Grade: Automotive
Qualification: AEC-Q101
Resistors Included: R1 and R2
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BCR503E6393HTSA1 BCR503E6393HTSA1 Infineon Technologies bcr503.pdf?folderId=db3a30431428a373011440769fd70304&fileId=db3a30431428a3730114407759130305 Description: TRANS PREBIAS PNP SOT23
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BCR505E6778HTSA1 BCR505E6778HTSA1 Infineon Technologies bcr505.pdf?folderId=db3a30431428a373011440769fd70304&fileId=db3a30431428a3730114407910280306 Description: TRANS PREBIAS NPN 50V SOT23
Packaging: Tape & Reel (TR)
Package / Case: TO-236-3, SC-59, SOT-23-3
Mounting Type: Surface Mount
Transistor Type: NPN - Pre-Biased
Vce Saturation (Max) @ Ib, Ic: 300mV @ 2.5mA, 50mA
Current - Collector Cutoff (Max): 100nA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce: 70 @ 50mA, 5V
Supplier Device Package: PG-SOT23
Part Status: Last Time Buy
Current - Collector (Ic) (Max): 500 mA
Voltage - Collector Emitter Breakdown (Max): 50 V
Power - Max: 330 mW
Frequency - Transition: 100 MHz
Resistor - Base (R1): 2.2 kOhms
Resistor - Emitter Base (R2): 10 kOhms
Resistors Included: R1 and R2
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BCV27E6395HTMA1 BCV27E6395HTMA1 Infineon Technologies bcv27_bcv47.pdf?folderId=db3a30431441fb5d011445c30f210183&fileId=db3a30431441fb5d011445cf7c3b0188 Description: TRANS NPN DARL 30V 0.5A SOT23
Packaging: Tape & Reel (TR)
Package / Case: TO-236-3, SC-59, SOT-23-3
Mounting Type: Surface Mount
Transistor Type: NPN - Darlington
Operating Temperature: 150°C (TJ)
Vce Saturation (Max) @ Ib, Ic: 1V @ 100µA, 100mA
Current - Collector Cutoff (Max): 100nA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce: 20000 @ 100mA, 5V
Frequency - Transition: 170MHz
Supplier Device Package: PG-SOT23
Part Status: Last Time Buy
Current - Collector (Ic) (Max): 500 mA
Voltage - Collector Emitter Breakdown (Max): 30 V
Power - Max: 360 mW
Grade: Automotive
Qualification: AEC-Q101
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BCV47E6393HTSA1 BCV47E6393HTSA1 Infineon Technologies bcv27_bcv47.pdf?folderId=db3a30431441fb5d011445c30f210183&fileId=db3a30431441fb5d011445cf7c3b0188 Description: TRANS NPN DARL 60V 0.5A PG-SOT23
Packaging: Tape & Reel (TR)
Package / Case: TO-236-3, SC-59, SOT-23-3
Mounting Type: Surface Mount
Transistor Type: NPN - Darlington
Operating Temperature: 150°C (TJ)
Vce Saturation (Max) @ Ib, Ic: 1V @ 100µA, 100mA
Current - Collector Cutoff (Max): 100nA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce: 10000 @ 100mA, 5V
Frequency - Transition: 170MHz
Supplier Device Package: PG-SOT23
Part Status: Last Time Buy
Current - Collector (Ic) (Max): 500 mA
Voltage - Collector Emitter Breakdown (Max): 60 V
Power - Max: 360 mW
Grade: Automotive
Qualification: AEC-Q101
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BCW60FNE6393HTSA1 BCW60FNE6393HTSA1 Infineon Technologies bcw60_bcx70.pdf Description: TRANS NPN 32V 0.1A PG-SOT23
Packaging: Tape & Reel (TR)
Package / Case: TO-236-3, SC-59, SOT-23-3
Mounting Type: Surface Mount
Transistor Type: NPN
Operating Temperature: 150°C (TJ)
Vce Saturation (Max) @ Ib, Ic: 550mV @ 1.25mA, 50mA
Current - Collector Cutoff (Max): 20nA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce: 380 @ 2mA, 5V
Frequency - Transition: 250MHz
Supplier Device Package: PG-SOT23
Part Status: Last Time Buy
Current - Collector (Ic) (Max): 100 mA
Voltage - Collector Emitter Breakdown (Max): 32 V
Power - Max: 330 mW
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BCW61E6384HTMA1 Infineon Technologies fundamentals-of-power-semiconductors Description: TRANSISTOR AF SOT23
Packaging: Tape & Reel (TR)
Part Status: Last Time Buy
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BCW66KE6359HTMA1 BCW66KE6359HTMA1 Infineon Technologies fundamentals-of-power-semiconductors Description: TRANS NPN 45V 0.8A PG-SOT23
Packaging: Tape & Reel (TR)
Package / Case: TO-236-3, SC-59, SOT-23-3
Mounting Type: Surface Mount
Transistor Type: NPN
Operating Temperature: 150°C (TJ)
Vce Saturation (Max) @ Ib, Ic: 450mV @ 50mA, 500mA
Current - Collector Cutoff (Max): 20nA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce: 40 @ 500mA, 1V
Frequency - Transition: 170MHz
Supplier Device Package: PG-SOT23
Part Status: Last Time Buy
Current - Collector (Ic) (Max): 800 mA
Voltage - Collector Emitter Breakdown (Max): 45 V
Power - Max: 500 mW
Grade: Automotive
Qualification: AEC-Q101
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BCW68E6359HTMA1 Infineon Technologies Part_Number_Guide_Web.pdf Description: TRANSISTOR AF SOT23
Packaging: Tape & Reel (TR)
Part Status: Last Time Buy
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BAW78DH6327XTSA1 BAW78DH6327XTSA1 Infineon Technologies baw78_baw79series.pdf?folderId=db3a30431400ef6801141c4ed9df0449&fileId=db3a30431400ef6801141c5037ac044a Description: DIODE GEN PURP 400V 1A SOT89
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BAW79DH6327XTSA1 BAW79DH6327XTSA1 Infineon Technologies baw78_baw79series.pdf?folderId=db3a30431400ef6801141c4ed9df0449&fileId=db3a30431400ef6801141c5037ac044a Description: DIODE ARRAY GP 400V 500MA SOT89
Packaging: Tape & Reel (TR)
Package / Case: TO-243AA
Mounting Type: Surface Mount
Speed: Standard Recovery >500ns, > 200mA (Io)
Reverse Recovery Time (trr): 1 µs
Technology: Standard
Diode Configuration: 1 Pair Common Cathode
Current - Average Rectified (Io) (per Diode): 500mA
Supplier Device Package: PG-SOT89
Operating Temperature - Junction: 150°C (Max)
Part Status: Last Time Buy
Voltage - DC Reverse (Vr) (Max): 400 V
Voltage - Forward (Vf) (Max) @ If: 1.6 V @ 1 A
Current - Reverse Leakage @ Vr: 1 µA @ 400 V
Grade: Automotive
Qualification: AEC-Q101
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BCV28H6327XTSA1 BCV28H6327XTSA1 Infineon Technologies BCV28_48.pdf Description: TRANS PNP DARL 30V 0.5A SOT89
Packaging: Tape & Reel (TR)
Package / Case: TO-243AA
Mounting Type: Surface Mount
Transistor Type: PNP - Darlington
Operating Temperature: 150°C (TJ)
Vce Saturation (Max) @ Ib, Ic: 1V @ 100µA, 100mA
Current - Collector Cutoff (Max): 100nA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce: 20000 @ 100mA, 5V
Frequency - Transition: 200MHz
Supplier Device Package: PG-SOT89
Grade: Automotive
Current - Collector (Ic) (Max): 500 mA
Voltage - Collector Emitter Breakdown (Max): 30 V
Power - Max: 1 W
Qualification: AEC-Q101
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BCV29H6327XTSA1 BCV29H6327XTSA1 Infineon Technologies BCV29_49.pdf Description: TRANS NPN DARL 30V 0.5A SOT89
Packaging: Tape & Reel (TR)
Package / Case: TO-243AA
Mounting Type: Surface Mount
Transistor Type: NPN - Darlington
Operating Temperature: 150°C (TJ)
Vce Saturation (Max) @ Ib, Ic: 1V @ 100µA, 100mA
Current - Collector Cutoff (Max): 100nA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce: 20000 @ 100mA, 5V
Frequency - Transition: 150MHz
Supplier Device Package: PG-SOT89
Grade: Automotive
Current - Collector (Ic) (Max): 500 mA
Voltage - Collector Emitter Breakdown (Max): 30 V
Power - Max: 1 W
Qualification: AEC-Q101
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BCX51H6327XTSA1 BCX51H6327XTSA1 Infineon Technologies infineon-bcx51-bcx52-bcx53-ds-en.pdf Description: TRANS PNP 45V 1A PG-SOT89
Packaging: Tape & Reel (TR)
Package / Case: TO-243AA
Mounting Type: Surface Mount
Transistor Type: PNP
Operating Temperature: 150°C (TJ)
Vce Saturation (Max) @ Ib, Ic: 500mV @ 50mA, 500mA
Current - Collector Cutoff (Max): 100nA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce: 40 @ 150mA, 2V
Frequency - Transition: 125MHz
Supplier Device Package: PG-SOT89
Part Status: Not For New Designs
Current - Collector (Ic) (Max): 1 A
Voltage - Collector Emitter Breakdown (Max): 45 V
Power - Max: 2 W
Grade: Automotive
Qualification: AEC-Q101
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BCX5216H6327XTSA1 BCX5216H6327XTSA1 Infineon Technologies infineon-bcx51-bcx52-bcx53-ds-en.pdf Description: TRANS PNP 60V 1A PG-SOT89
Packaging: Tape & Reel (TR)
Package / Case: TO-243AA
Mounting Type: Surface Mount
Transistor Type: PNP
Operating Temperature: 150°C (TJ)
Vce Saturation (Max) @ Ib, Ic: 500mV @ 50mA, 500mA
Current - Collector Cutoff (Max): 100nA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce: 100 @ 150mA, 2V
Frequency - Transition: 125MHz
Supplier Device Package: PG-SOT89
Part Status: Last Time Buy
Current - Collector (Ic) (Max): 1 A
Voltage - Collector Emitter Breakdown (Max): 60 V
Power - Max: 2 W
Grade: Automotive
Qualification: AEC-Q101
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BCX52H6327XTSA1 BCX52H6327XTSA1 Infineon Technologies infineon-bcx51-bcx52-bcx53-ds-en.pdf Description: TRANS PNP 60V 1A PG-SOT89
Packaging: Tape & Reel (TR)
Package / Case: TO-243AA
Mounting Type: Surface Mount
Transistor Type: PNP
Operating Temperature: 150°C (TJ)
Vce Saturation (Max) @ Ib, Ic: 500mV @ 50mA, 500mA
Current - Collector Cutoff (Max): 100nA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce: 40 @ 150mA, 2V
Frequency - Transition: 125MHz
Supplier Device Package: PG-SOT89
Part Status: Last Time Buy
Current - Collector (Ic) (Max): 1 A
Voltage - Collector Emitter Breakdown (Max): 60 V
Power - Max: 2 W
Grade: Automotive
Qualification: AEC-Q101
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BCX5310H6327XTSA1 BCX5310H6327XTSA1 Infineon Technologies infineon-bcx51-bcx52-bcx53-ds-en.pdf Description: TRANS PNP 80V 1A PG-SOT89
Packaging: Tape & Reel (TR)
Package / Case: TO-243AA
Mounting Type: Surface Mount
Transistor Type: PNP
Operating Temperature: 150°C (TJ)
Vce Saturation (Max) @ Ib, Ic: 500mV @ 50mA, 500mA
Current - Collector Cutoff (Max): 100nA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce: 63 @ 150mA, 2V
Frequency - Transition: 125MHz
Supplier Device Package: PG-SOT89
Part Status: Last Time Buy
Current - Collector (Ic) (Max): 1 A
Voltage - Collector Emitter Breakdown (Max): 80 V
Power - Max: 2 W
Grade: Automotive
Qualification: AEC-Q101
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BCX53H6327XTSA1 BCX53H6327XTSA1 Infineon Technologies infineon-bcx51-bcx52-bcx53-ds-en.pdf Description: TRANS PNP 80V 1A PG-SOT89
Packaging: Tape & Reel (TR)
Package / Case: TO-243AA
Mounting Type: Surface Mount
Transistor Type: PNP
Operating Temperature: 150°C (TJ)
Vce Saturation (Max) @ Ib, Ic: 500mV @ 50mA, 500mA
Current - Collector Cutoff (Max): 100nA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce: 40 @ 150mA, 2V
Frequency - Transition: 125MHz
Supplier Device Package: PG-SOT89
Part Status: Last Time Buy
Current - Collector (Ic) (Max): 1 A
Voltage - Collector Emitter Breakdown (Max): 80 V
Power - Max: 2 W
Grade: Automotive
Qualification: AEC-Q101
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BCX5516H6327XTSA1 BCX5516H6327XTSA1 Infineon Technologies bcx54_bcx55_bcx56.pdf?folderId=db3a304314dca38901155ffc06d51dc7&fileId=db3a3043156fd573011589d20fda0368 Description: TRANS NPN 60V 1A PG-SOT89
Packaging: Tape & Reel (TR)
Package / Case: TO-243AA
Mounting Type: Surface Mount
Transistor Type: NPN
Operating Temperature: 150°C (TJ)
Vce Saturation (Max) @ Ib, Ic: 500mV @ 50mA, 500mA
Current - Collector Cutoff (Max): 100nA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce: 100 @ 150mA, 2V
Frequency - Transition: 100MHz
Supplier Device Package: PG-SOT89
Part Status: Last Time Buy
Current - Collector (Ic) (Max): 1 A
Voltage - Collector Emitter Breakdown (Max): 60 V
Power - Max: 2 W
Grade: Automotive
Qualification: AEC-Q101
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BCX5516H6433XTMA1 BCX5516H6433XTMA1 Infineon Technologies bcx54_bcx55_bcx56.pdf?folderId=db3a304314dca38901155ffc06d51dc7&fileId=db3a3043156fd573011589d20fda0368 Description: TRANS NPN 60V 1A PG-SOT89
Packaging: Tape & Reel (TR)
Package / Case: TO-243AA
Mounting Type: Surface Mount
Transistor Type: NPN
Operating Temperature: 150°C (TJ)
Vce Saturation (Max) @ Ib, Ic: 500mV @ 50mA, 500mA
Current - Collector Cutoff (Max): 100nA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce: 100 @ 150mA, 2V
Frequency - Transition: 100MHz
Supplier Device Package: PG-SOT89
Part Status: Last Time Buy
Current - Collector (Ic) (Max): 1 A
Voltage - Collector Emitter Breakdown (Max): 60 V
Power - Max: 2 W
Grade: Automotive
Qualification: AEC-Q101
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BCX5616H6433XTMA1 BCX5616H6433XTMA1 Infineon Technologies bcx54_bcx55_bcx56.pdf?folderId=db3a304314dca38901155ffc06d51dc7&fileId=db3a3043156fd573011589d20fda0368 Description: TRANS NPN 80V 1A PG-SOT89
Packaging: Tape & Reel (TR)
Package / Case: TO-243AA
Mounting Type: Surface Mount
Transistor Type: NPN
Operating Temperature: 150°C (TJ)
Vce Saturation (Max) @ Ib, Ic: 500mV @ 50mA, 500mA
Current - Collector Cutoff (Max): 100nA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce: 100 @ 150mA, 2V
Frequency - Transition: 100MHz
Supplier Device Package: PG-SOT89
Part Status: Last Time Buy
Current - Collector (Ic) (Max): 1 A
Voltage - Collector Emitter Breakdown (Max): 80 V
Power - Max: 2 W
Grade: Automotive
Qualification: AEC-Q101
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BCX56H6327XTSA1 BCX56H6327XTSA1 Infineon Technologies bcx54_bcx55_bcx56.pdf?folderId=db3a304314dca38901155ffc06d51dc7&fileId=db3a3043156fd573011589d20fda0368 Description: TRANS NPN 80V 1A PG-SOT89
Packaging: Tape & Reel (TR)
Package / Case: TO-243AA
Mounting Type: Surface Mount
Transistor Type: NPN
Operating Temperature: 150°C (TJ)
Vce Saturation (Max) @ Ib, Ic: 500mV @ 50mA, 500mA
Current - Collector Cutoff (Max): 100nA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce: 40 @ 150mA, 2V
Frequency - Transition: 100MHz
Supplier Device Package: PG-SOT89
Part Status: Last Time Buy
Current - Collector (Ic) (Max): 1 A
Voltage - Collector Emitter Breakdown (Max): 80 V
Power - Max: 2 W
Grade: Automotive
Qualification: AEC-Q101
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BCX6816H6327XTSA1 BCX6816H6327XTSA1 Infineon Technologies bcx68.pdf?folderId=db3a304314dca38901155ffc06d51dc7&fileId=db3a3043156fd573011589ef403903e7 Description: TRANS NPN 20V 1A PG-SOT89
Packaging: Tape & Reel (TR)
Package / Case: TO-243AA
Mounting Type: Surface Mount
Transistor Type: NPN
Operating Temperature: 150°C (TJ)
Vce Saturation (Max) @ Ib, Ic: 500mV @ 100mA, 1A
Current - Collector Cutoff (Max): 100nA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce: 100 @ 500mA, 1V
Frequency - Transition: 100MHz
Supplier Device Package: PG-SOT89
Part Status: Last Time Buy
Current - Collector (Ic) (Max): 1 A
Voltage - Collector Emitter Breakdown (Max): 20 V
Power - Max: 3 W
Grade: Automotive
Qualification: AEC-Q101
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BCX6910H6327XTSA1 BCX6910H6327XTSA1 Infineon Technologies bcx69.pdf?folderId=db3a304314dca38901155ffc06d51dc7&fileId=db3a3043156fd573011589f3f56603ee&location=.en.product.findProductTypeByName.html_dgdl_bcx69.pdf Description: TRANS PNP 20V 1A PG-SOT89
Packaging: Tape & Reel (TR)
Package / Case: TO-243AA
Mounting Type: Surface Mount
Transistor Type: PNP
Operating Temperature: 150°C (TJ)
Vce Saturation (Max) @ Ib, Ic: 500mV @ 100mA, 1A
Current - Collector Cutoff (Max): 100nA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce: 85 @ 500mA, 1V
Frequency - Transition: 100MHz
Supplier Device Package: PG-SOT89
Grade: Automotive
Current - Collector (Ic) (Max): 1 A
Voltage - Collector Emitter Breakdown (Max): 20 V
Power - Max: 3 W
Qualification: AEC-Q101
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BCX6916H6327XTSA1 BCX6916H6327XTSA1 Infineon Technologies bcx69.pdf?folderId=db3a304314dca38901155ffc06d51dc7&fileId=db3a3043156fd573011589f3f56603ee&location=.en.product.findProductTypeByName.html_dgdl_bcx69.pdf Description: TRANS PNP 20V 1A PG-SOT89
Packaging: Tape & Reel (TR)
Package / Case: TO-243AA
Mounting Type: Surface Mount
Transistor Type: PNP
Operating Temperature: 150°C (TJ)
Vce Saturation (Max) @ Ib, Ic: 500mV @ 100mA, 1A
Current - Collector Cutoff (Max): 100nA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce: 100 @ 500mA, 1V
Frequency - Transition: 100MHz
Supplier Device Package: PG-SOT89
Part Status: Last Time Buy
Current - Collector (Ic) (Max): 1 A
Voltage - Collector Emitter Breakdown (Max): 20 V
Power - Max: 3 W
Grade: Automotive
Qualification: AEC-Q101
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BCX6925H6327XTSA1 BCX6925H6327XTSA1 Infineon Technologies bcx69.pdf?folderId=db3a304314dca38901155ffc06d51dc7&fileId=db3a3043156fd573011589f3f56603ee&location=.en.product.findProductTypeByName.html_dgdl_bcx69.pdf Description: TRANS PNP 20V 1A PG-SOT89
Packaging: Tape & Reel (TR)
Package / Case: TO-243AA
Mounting Type: Surface Mount
Transistor Type: PNP
Operating Temperature: 150°C (TJ)
Vce Saturation (Max) @ Ib, Ic: 500mV @ 100mA, 1A
Current - Collector Cutoff (Max): 100nA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce: 160 @ 500mA, 1V
Frequency - Transition: 100MHz
Supplier Device Package: PG-SOT89
Grade: Automotive
Current - Collector (Ic) (Max): 1 A
Voltage - Collector Emitter Breakdown (Max): 20 V
Power - Max: 3 W
Qualification: AEC-Q101
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BFN18H6327XTSA1 BFN18H6327XTSA1 Infineon Technologies bfn18.pdf?folderId=db3a30431441fb5d011449af3ad90232&fileId=db3a30431441fb5d011449b188060234 Description: TRANSISTOR AF SOT89-4
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BFN19H6327XTSA1 BFN19H6327XTSA1 Infineon Technologies bfn19.pdf?folderId=db3a30431441fb5d011449af3ad90232&fileId=db3a30431441fb5d011449c1d62e0238 Description: TRANS PNP 300V 0.2A SOT89
Packaging: Tape & Reel (TR)
Package / Case: TO-243AA
Mounting Type: Surface Mount
Transistor Type: PNP
Operating Temperature: 150°C (TJ)
Vce Saturation (Max) @ Ib, Ic: 500mV @ 2mA, 20mA
Current - Collector Cutoff (Max): 100nA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce: 30 @ 30mA, 10V
Frequency - Transition: 100MHz
Supplier Device Package: PG-SOT89
Grade: Automotive
Current - Collector (Ic) (Max): 200 mA
Voltage - Collector Emitter Breakdown (Max): 300 V
Power - Max: 1 W
Qualification: AEC-Q101
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FF150R17KE4HOSA1 Infineon Technologies Infineon-FF150R17KE4-DS-v02_02-en_de.pdf?fileId=db3a3043294a3558012959da50bd7c47 Description: MODULE IGBT 1700V AG-62MM-1
товару немає в наявності
В кошику  од. на суму  грн.
BSM100GB170DN2HOSA1 Infineon Technologies BSM_100_GB_170_DN2.pdf Description: IGBT MOD 1700V 145A 1000W
Packaging: Tray
Package / Case: Module
Mounting Type: Chassis Mount
Input: Standard
Configuration: Half Bridge
Operating Temperature: 150°C (TJ)
Vce(on) (Max) @ Vge, Ic: 3.9V @ 15V, 100A
NTC Thermistor: No
Supplier Device Package: Module
Current - Collector (Ic) (Max): 145 A
Voltage - Collector Emitter Breakdown (Max): 1700 V
Power - Max: 1000 W
Current - Collector Cutoff (Max): 1 mA
Input Capacitance (Cies) @ Vce: 16 nF @ 25 V
товару немає в наявності
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BSM150GB170DN2HOSA1 Infineon Technologies BSM_150_GB_170_DN2.pdf Description: IGBT MOD 1700V 220A 1250W MOD
Packaging: Tray
Package / Case: Module
Mounting Type: Chassis Mount
Input: Standard
Configuration: Half Bridge
Operating Temperature: 150°C (TJ)
Vce(on) (Max) @ Vge, Ic: 3.9V @ 15V, 150A
NTC Thermistor: No
Supplier Device Package: Module
Part Status: Obsolete
Current - Collector (Ic) (Max): 220 A
Voltage - Collector Emitter Breakdown (Max): 1700 V
Power - Max: 1250 W
Current - Collector Cutoff (Max): 1.5 mA
Input Capacitance (Cies) @ Vce: 20 nF @ 25 V
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BSM300GA170DN2HOSA1 Infineon Technologies BSM_300_GA_170_DN2.pdf Description: IGBT MOD 1700V 440A 2500W
Packaging: Tray
Package / Case: Module
Mounting Type: Chassis Mount
Input: Standard
Configuration: Single
Operating Temperature: 150°C (TJ)
Vce(on) (Max) @ Vge, Ic: 3.9V @ 15V, 300A
NTC Thermistor: No
Supplier Device Package: Module
Current - Collector (Ic) (Max): 440 A
Voltage - Collector Emitter Breakdown (Max): 1700 V
Power - Max: 2500 W
Current - Collector Cutoff (Max): 3 mA
товару немає в наявності
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TLV493DA1B6HTSA2 TLV493DA1B6HTSA2 Infineon Technologies TLV493D-A1B6_Rev1.1_4-9-19.pdf Description: SENSOR ROTARY 360DEG SMD
Packaging: Tape & Reel (TR)
Package / Case: SOT-23-6 Thin, TSOT-23-6
Mounting Type: Surface Mount
Output: I2C
Operating Temperature: -40°C ~ 125°C
Termination Style: SMD (SMT) Tab
Voltage - Supply: 2.7V ~ 3.5V
Actuator Type: External Magnet, Not Included
Technology: Hall Effect
For Measuring: Linear, Rotary Position
Supplier Device Package: PG-TSOP-6-6-5
Rotation Angle - Electrical, Mechanical: 0° ~ 360°, Continuous
Part Status: Active
Grade: Automotive
Qualification: AEC-Q100
на замовлення 12000 шт:
термін постачання 21-31 дні (днів)
3000+33.67 грн
6000+31.31 грн
9000+30.70 грн
Мінімальне замовлення: 3000
В кошику  од. на суму  грн.
TLV493DA1B62GOKITTOBO1 TLV493DA1B62GOKITTOBO1 Infineon Technologies TLV493D-A1B6_Rev1.1_4-9-19.pdf Description: 3D MAGNETICS SENSOR 2GO KIT-TL
Packaging: Bulk
Interface: I2C
Voltage - Supply: 2.7V ~ 3.5V
Sensor Type: Magnetic, Linear, Rotary Position
Utilized IC / Part: TLV493D-A1B6
Supplied Contents: Board(s)
Part Status: Obsolete
Contents: Board(s)
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TLV493DA1B6HTSA2 TLV493DA1B6HTSA2 Infineon Technologies TLV493D-A1B6_Rev1.1_4-9-19.pdf Description: SENSOR ROTARY 360DEG SMD
Packaging: Cut Tape (CT)
Package / Case: SOT-23-6 Thin, TSOT-23-6
Mounting Type: Surface Mount
Output: I2C
Operating Temperature: -40°C ~ 125°C
Termination Style: SMD (SMT) Tab
Voltage - Supply: 2.7V ~ 3.5V
Actuator Type: External Magnet, Not Included
Technology: Hall Effect
For Measuring: Linear, Rotary Position
Supplier Device Package: PG-TSOP-6-6-5
Rotation Angle - Electrical, Mechanical: 0° ~ 360°, Continuous
Part Status: Active
Grade: Automotive
Qualification: AEC-Q100
на замовлення 12300 шт:
термін постачання 21-31 дні (днів)
6+58.10 грн
7+49.08 грн
10+46.52 грн
25+40.83 грн
50+38.91 грн
100+37.14 грн
500+33.06 грн
1000+31.77 грн
Мінімальне замовлення: 6
В кошику  од. на суму  грн.
BFP780H6327XTSA1 BFP780H6327XTSA1 Infineon Technologies Infineon-BFP780-DS-v04_00-EN.pdf?fileId=5546d46265f064ff01663896b2fe4eb3 Description: RF TRANS NPN 6.1V 900MHZ SOT343
Packaging: Cut Tape (CT)
Package / Case: SC-82A, SOT-343
Mounting Type: Surface Mount
Transistor Type: NPN
Operating Temperature: 150°C (TJ)
Gain: 27dB
Power - Max: 600mW
Current - Collector (Ic) (Max): 120mA
Voltage - Collector Emitter Breakdown (Max): 6.1V
DC Current Gain (hFE) (Min) @ Ic, Vce: 85 @ 90mA, 5V
Frequency - Transition: 900MHz
Noise Figure (dB Typ @ f): 1.2dB ~ 2.4dB @ 900MHz ~ 3.5GHz
Supplier Device Package: PG-SOT343-4-1
Part Status: Obsolete
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BSC009NE2LS5ATMA1 BSC009NE2LS5ATMA1 Infineon Technologies Infineon-BSC009NE2LS5-DS-v02_00-EN.pdf?fileId=5546d4624bcaebcf014c096c7c152310 Description: MOSFET N-CH 25V 41A/223A TDSON
Packaging: Tape & Reel (TR)
Package / Case: 8-PowerTDFN
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 41A (Ta), 223A (Tc)
Rds On (Max) @ Id, Vgs: 0.9mOhm @ 30A, 10V
Power Dissipation (Max): 2.5W (Ta), 74W (Tc)
Vgs(th) (Max) @ Id: 2V @ 250µA
Supplier Device Package: PG-TDSON-8-7
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±16V
Drain to Source Voltage (Vdss): 25 V
Gate Charge (Qg) (Max) @ Vgs: 57 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 3900 pF @ 12 V
на замовлення 10000 шт:
термін постачання 21-31 дні (днів)
5000+48.53 грн
Мінімальне замовлення: 5000
В кошику  од. на суму  грн.
BSC009NE2LS5IATMA1 BSC009NE2LS5IATMA1 Infineon Technologies Infineon-BSC009NE2LS5I-DS-v02_00-EN.pdf?fileId=5546d4624bcaebcf014c09a38586234e Description: MOSFET N-CH 25V 40A/217A TDSON
Packaging: Tape & Reel (TR)
Package / Case: 8-PowerTDFN
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 40A (Ta), 217A (Tc)
Rds On (Max) @ Id, Vgs: 0.95mOhm @ 30A, 10V
Power Dissipation (Max): 2.5W (Ta), 74W (Tc)
Vgs(th) (Max) @ Id: 2V @ 250µA
Supplier Device Package: PG-TDSON-8-7
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±16V
Drain to Source Voltage (Vdss): 25 V
Gate Charge (Qg) (Max) @ Vgs: 49 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 3200 pF @ 12 V
на замовлення 5000 шт:
термін постачання 21-31 дні (днів)
5000+56.62 грн
Мінімальне замовлення: 5000
В кошику  од. на суму  грн.
IRF8252TRPBF-1 IRF8252TRPBF-1 Infineon Technologies irf8252pbf-1.pdf?fileId=5546d462533600a40153560d053a1d56 Description: MOSFET N-CH 25V 25A 8SO
Packaging: Tape & Reel (TR)
Package / Case: 8-SOIC (0.154", 3.90mm Width)
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 25A (Ta)
Rds On (Max) @ Id, Vgs: 2.7mOhm @ 25A, 10V
Power Dissipation (Max): 2.5W (Ta)
Vgs(th) (Max) @ Id: 2.35V @ 100µA
Supplier Device Package: PG-DSO-8
Part Status: Obsolete
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 25 V
Gate Charge (Qg) (Max) @ Vgs: 53 nC @ 4.5 V
Input Capacitance (Ciss) (Max) @ Vds: 5305 pF @ 13 V
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IRFH7187TRPBF Infineon Technologies irfh7187pbf.pdf Description: MOSFET N-CH 100V 18A/105A 8PQFN
Packaging: Tape & Reel (TR)
Package / Case: 8-PowerVDFN
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 18A (Ta), 105A (Tc)
Rds On (Max) @ Id, Vgs: 6mOhm @ 50A, 10V
Power Dissipation (Max): 3.8W (Ta), 132W (Tc)
Vgs(th) (Max) @ Id: 3.6V @ 150µA
Supplier Device Package: 8-PQFN (5x6)
Part Status: Obsolete
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 100 V
Gate Charge (Qg) (Max) @ Vgs: 50 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 2116 pF @ 50 V
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В кошику  од. на суму  грн.
62-0209PBF Infineon Technologies Description: DIODE SHOCTTKY
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62-0216PBF Infineon Technologies Description: DIODE SHOCTTKY
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62-0239PBF Infineon Technologies Description: DIODE SHOCTTKY
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62-0245PBF Infineon Technologies Description: DIODE SHOCTTKY
товару немає в наявності
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62-0253PBF Infineon Technologies Description: DIODE SHOCTTKY
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62-0254PBF Infineon Technologies Part_Number_Guide_Web.pdf Description: DIODE SHOCTTKY
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BSC265N10LSFGATMA1 BSC265N10LSFGATMA1 Infineon Technologies BSC265N10LSF+G_+Rev2.06.pdf?folderId=db3a304313b8b5a60113cee8763b02d7&fileId=db3a30431b3e89eb011b49a375207b46 Description: MOSFET N-CH 100V 6.5A/40A TDSON
Packaging: Cut Tape (CT)
Package / Case: 8-PowerTDFN
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 6.5A (Ta), 40A (Tc)
Rds On (Max) @ Id, Vgs: 26.5mOhm @ 20A, 10V
Power Dissipation (Max): 78W (Tc)
Vgs(th) (Max) @ Id: 2.4V @ 43µA
Supplier Device Package: PG-TDSON-8-1
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 100 V
Gate Charge (Qg) (Max) @ Vgs: 21 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 1600 pF @ 50 V
на замовлення 13438 шт:
термін постачання 21-31 дні (днів)
4+106.24 грн
10+64.50 грн
100+42.88 грн
500+31.54 грн
1000+28.74 грн
2000+27.45 грн
Мінімальне замовлення: 4
В кошику  од. на суму  грн.
IPD048N06L3GBTMA1 IPD048N06L3GBTMA1 Infineon Technologies IPD048N06L3_Rev2.0.pdf?folderId=db3a30431441fb5d01148ca9f1be0e77&fileId=db3a30431ddc9372011e2b4f496e4db0 Description: MOSFET N-CH 60V 90A TO252-3
Packaging: Cut Tape (CT)
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 90A (Tc)
Rds On (Max) @ Id, Vgs: 4.8mOhm @ 90A, 10V
Power Dissipation (Max): 115W (Tc)
Vgs(th) (Max) @ Id: 2.2V @ 58µA
Supplier Device Package: PG-TO252-3
Part Status: Obsolete
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 60 V
Gate Charge (Qg) (Max) @ Vgs: 50 nC @ 4.5 V
Input Capacitance (Ciss) (Max) @ Vds: 8400 pF @ 30 V
товару немає в наявності
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1EBN1001AEXUMA1 1EBN1001AEXUMA1 Infineon Technologies Infineon-1EBN1001AE-DS-v03_00-EN.pdf?fileId=5546d462503812bb01505fa4d89805a0 Description: IC GATE DRVR HI/LOW SIDE 14SOIC
Packaging: Tape & Reel (TR)
Package / Case: 14-SOIC (0.154", 3.90mm Width) Exposed Pad
Mounting Type: Surface Mount
Operating Temperature: -40°C ~ 150°C (TJ)
Voltage - Supply: 13V ~ 18V
High Side Voltage - Max (Bootstrap): 1200 V
Supplier Device Package: PG-DSO-14-43
Rise / Fall Time (Typ): 50ns, 90ns
Channel Type: Single
Driven Configuration: High-Side or Low-Side
Number of Drivers: 1
Gate Type: IGBT, MOSFET (N-Channel, P-Channel)
Logic Voltage - VIL, VIH: 1.5V, 3.5V
Part Status: Active
DigiKey Programmable: Not Verified
Grade: Automotive
Qualification: AEC-Q100
товару немає в наявності
В кошику  од. на суму  грн.
1ED020I12B2XUMA1 1ED020I12B2XUMA1 Infineon Technologies Infineon-1ED020I12-B2-DataSheet-v02_02-EN.pdf?fileId=db3a304333227b5e013344bf16f84ca6 Description: DGT ISO 4.5KV 1CH GT DVR DSO16
Packaging: Tape & Reel (TR)
Package / Case: 16-SOIC (0.295", 7.50mm Width)
Mounting Type: Surface Mount
Operating Temperature: -40°C ~ 150°C (TJ)
Technology: Magnetic Coupling
Current - Output High, Low: 2A, 2A
Voltage - Isolation: 4500Vrms
Supplier Device Package: PG-DSO-16-15
Rise / Fall Time (Typ): 30ns, 50ns
Part Status: Active
Number of Channels: 1
Voltage - Output Supply: 13V ~ 20V
на замовлення 4000 шт:
термін постачання 21-31 дні (днів)
1000+195.98 грн
2000+184.48 грн
3000+182.36 грн
Мінімальне замовлення: 1000
В кошику  од. на суму  грн.
1ED020I12FA2XUMA2 1ED020I12FA2XUMA2 Infineon Technologies Infineon-1ED020I12FA2-DS-v02_00-en.pdf?fileId=db3a304333227b5e013344d078be4cdf Description: DGTL ISO 4.5KV 1CH GT DVR DSO20
Packaging: Tape & Reel (TR)
Package / Case: 20-SOIC (0.295", 7.50mm Width)
Mounting Type: Surface Mount
Operating Temperature: -40°C ~ 150°C (TJ)
Technology: Magnetic Coupling
Current - Output High, Low: 2A, 2A
Voltage - Isolation: 4500Vrms
Supplier Device Package: PG-DSO-20
Rise / Fall Time (Typ): 30ns, 50ns
Part Status: Not For New Designs
Number of Channels: 1
Voltage - Output Supply: 13V ~ 20V
Grade: Automotive
Qualification: AEC-Q100
на замовлення 3000 шт:
термін постачання 21-31 дні (днів)
1000+283.47 грн
Мінімальне замовлення: 1000
В кошику  од. на суму  грн.
1ED020I12FTAXUMA2 1ED020I12FTAXUMA2 Infineon Technologies Infineon-1ED020I12FTA-DS-v03_00-EN.pdf?fileId=db3a30432e779412012e7b85bdb73874 Description: DGT ISO 4.5KV 1CH GT DVR DSO20
Packaging: Tape & Reel (TR)
Package / Case: 20-SOIC (0.295", 7.50mm Width)
Mounting Type: Surface Mount
Operating Temperature: -40°C ~ 150°C (TJ)
Technology: Magnetic Coupling
Current - Output High, Low: 2A, 2A
Voltage - Isolation: 4500Vrms
Supplier Device Package: PG-DSO-20-55
Rise / Fall Time (Typ): 30ns, 20ns
Part Status: Not For New Designs
Number of Channels: 1
Voltage - Output Supply: 4.5V ~ 5.5V
на замовлення 1000 шт:
термін постачання 21-31 дні (днів)
1000+283.93 грн
Мінімальне замовлення: 1000
В кошику  од. на суму  грн.
1EDI05I12AFXUMA1 1EDI05I12AFXUMA1 Infineon Technologies Infineon--DS-v02_00-EN.pdf?fileId=db3a3043427ac3e201428e648a333734 Description: DIGITAL ISO 1CH GATE DVR DSO8-51
Packaging: Tape & Reel (TR)
Package / Case: 8-SOIC (0.154", 3.90mm Width)
Mounting Type: Surface Mount
Operating Temperature: -40°C ~ 150°C (TJ)
Technology: Magnetic Coupling
Supplier Device Package: PG-DSO-8-51
Rise / Fall Time (Typ): 10ns, 9ns
Number of Channels: 1
Voltage - Output Supply: 13V ~ 35V
на замовлення 10000 шт:
термін постачання 21-31 дні (днів)
2500+58.29 грн
5000+54.05 грн
Мінімальне замовлення: 2500
В кошику  од. на суму  грн.
1EDI2001ASXUMA2 1EDI2001ASXUMA2 Infineon Technologies 1EDI2001AS.pdf Description: DGT ISO 3.75KV 1CH GT DVR DSO36
Packaging: Tape & Reel (TR)
Package / Case: 36-BSSOP (0.295", 7.50mm Width)
Mounting Type: Surface Mount
Operating Temperature: -40°C ~ 150°C (TJ)
Technology: Magnetic Coupling
Current - Output High, Low: 1A, 1A
Voltage - Isolation: 3750Vrms
Supplier Device Package: PG-DSO-36-63
Rise / Fall Time (Typ): 30ns, 60ns
Number of Channels: 1
Voltage - Output Supply: 13V ~ 18V
товару немає в наявності
В кошику  од. на суму  грн.
1EDI20I12MFXUMA1 1EDI20I12MFXUMA1 Infineon Technologies Infineon-1EDIXXI12MF-DS-v02_00-EN.pdf?fileId=5546d46145f1f3a401462944e0190fd7 Description: DIGITAL ISO 1CH GATE DVR DSO8-51
Packaging: Tape & Reel (TR)
Package / Case: 8-SOIC (0.154", 3.90mm Width)
Mounting Type: Surface Mount
Operating Temperature: -40°C ~ 150°C (TJ)
Technology: Magnetic Coupling
Supplier Device Package: PG-DSO-8-51
Rise / Fall Time (Typ): 9ns, 6ns
Number of Channels: 1
Voltage - Output Supply: 13V ~ 18V
на замовлення 2500 шт:
термін постачання 21-31 дні (днів)
2500+60.10 грн
Мінімальне замовлення: 2500
В кошику  од. на суму  грн.
1EDI20N12AFXUMA1 1EDI20N12AFXUMA1 Infineon Technologies Infineon-1EDI20N12AF-DS-v02_00-EN.pdf?fileId=5546d4614755559a014790299add6112 Description: DIGITAL ISO 1CH GATE DVR DSO8-51
Packaging: Tape & Reel (TR)
Package / Case: 8-SOIC (0.154", 3.90mm Width)
Mounting Type: Surface Mount
Operating Temperature: -40°C ~ 150°C (TJ)
Technology: Magnetic Coupling
Supplier Device Package: PG-DSO-8-51
Rise / Fall Time (Typ): 10ns, 9ns
Number of Channels: 1
Voltage - Output Supply: 10V ~ 35V
на замовлення 10000 шт:
термін постачання 21-31 дні (днів)
2500+55.84 грн
5000+52.57 грн
7500+51.97 грн
Мінімальне замовлення: 2500
В кошику  од. на суму  грн.
1EDI30I12MFXUMA1 1EDI30I12MFXUMA1 Infineon Technologies Infineon-1EDIXXI12MF-DS-v02_00-EN.pdf?fileId=5546d46145f1f3a401462944e0190fd7 Description: DIGITAL ISO 1CH GATE DVR DSO8-51
Packaging: Tape & Reel (TR)
Package / Case: 8-SOIC (0.154", 3.90mm Width)
Mounting Type: Surface Mount
Operating Temperature: -40°C ~ 150°C (TJ)
Technology: Magnetic Coupling
Supplier Device Package: PG-DSO-8-51
Rise / Fall Time (Typ): 9ns, 6ns
Part Status: Active
Number of Channels: 1
Voltage - Output Supply: 13V ~ 18V
товару немає в наявності
В кошику  од. на суму  грн.
1EDI40I12AFXUMA1 1EDI40I12AFXUMA1 Infineon Technologies Infineon--DS-v02_00-EN.pdf?fileId=db3a3043427ac3e201428e648a333734 Description: DIGITAL ISO 1CH GATE DVR DSO8-51
Packaging: Tape & Reel (TR)
Package / Case: 8-SOIC (0.154", 3.90mm Width)
Mounting Type: Surface Mount
Operating Temperature: -40°C ~ 150°C (TJ)
Technology: Magnetic Coupling
Supplier Device Package: PG-DSO-8-51
Rise / Fall Time (Typ): 10ns, 9ns
Number of Channels: 1
Voltage - Output Supply: 13V ~ 35V
на замовлення 7500 шт:
термін постачання 21-31 дні (днів)
2500+64.40 грн
5000+59.71 грн
Мінімальне замовлення: 2500
В кошику  од. на суму  грн.
1EDI60I12AFXUMA1 1EDI60I12AFXUMA1 Infineon Technologies Infineon--DS-v02_00-EN.pdf?fileId=db3a3043427ac3e201428e648a333734 Description: DIGITAL ISO 1CH GATE DVR DSO8-51
Packaging: Tape & Reel (TR)
Package / Case: 8-SOIC (0.154", 3.90mm Width)
Mounting Type: Surface Mount
Operating Temperature: -40°C ~ 150°C (TJ)
Technology: Magnetic Coupling
Supplier Device Package: PG-DSO-8-51
Rise / Fall Time (Typ): 10ns, 9ns
Number of Channels: 1
Voltage - Output Supply: 13V ~ 35V
на замовлення 5000 шт:
термін постачання 21-31 дні (днів)
2500+72.63 грн
5000+68.43 грн
Мінімальне замовлення: 2500
В кошику  од. на суму  грн.
1EDI60N12AFXUMA1 1EDI60N12AFXUMA1 Infineon Technologies Infineon-1EDI60N12AF-DS-v02_00-EN.pdf?fileId=db3a3043427ac3e201428e5da08f372a Description: DIGITAL ISO 1CH GATE DVR DSO8-51
Packaging: Tape & Reel (TR)
Package / Case: 8-SOIC (0.154", 3.90mm Width)
Mounting Type: Surface Mount
Operating Temperature: -40°C ~ 150°C (TJ)
Technology: Magnetic Coupling
Supplier Device Package: PG-DSO-8-51
Rise / Fall Time (Typ): 10ns, 9ns
Part Status: Active
Number of Channels: 1
Voltage - Output Supply: 10V ~ 35V
на замовлення 2500 шт:
термін постачання 21-31 дні (днів)
2500+67.49 грн
Мінімальне замовлення: 2500
В кошику  од. на суму  грн.
BCR198E6393HTSA1 bcr198series.pdf?folderId=db3a30431f848401011fcbf2ab4c04c4&fileId=db3a304320d39d590121e8552c2f65bb
BCR198E6393HTSA1
Виробник: Infineon Technologies
Description: TRANS PREBIAS PNP 50V SOT23
Packaging: Tape & Reel (TR)
Package / Case: TO-236-3, SC-59, SOT-23-3
Mounting Type: Surface Mount
Transistor Type: PNP - Pre-Biased
Vce Saturation (Max) @ Ib, Ic: 300mV @ 500µA, 10mA
Current - Collector Cutoff (Max): 100nA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce: 70 @ 5mA, 5V
Supplier Device Package: PG-SOT23
Current - Collector (Ic) (Max): 100 mA
Voltage - Collector Emitter Breakdown (Max): 50 V
Power - Max: 200 mW
Frequency - Transition: 190 MHz
Resistor - Base (R1): 47 kOhms
Resistor - Emitter Base (R2): 47 kOhms
Grade: Automotive
Qualification: AEC-Q101
Resistors Included: R1 and R2
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BCR503E6393HTSA1 bcr503.pdf?folderId=db3a30431428a373011440769fd70304&fileId=db3a30431428a3730114407759130305
BCR503E6393HTSA1
Виробник: Infineon Technologies
Description: TRANS PREBIAS PNP SOT23
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BCR505E6778HTSA1 bcr505.pdf?folderId=db3a30431428a373011440769fd70304&fileId=db3a30431428a3730114407910280306
BCR505E6778HTSA1
Виробник: Infineon Technologies
Description: TRANS PREBIAS NPN 50V SOT23
Packaging: Tape & Reel (TR)
Package / Case: TO-236-3, SC-59, SOT-23-3
Mounting Type: Surface Mount
Transistor Type: NPN - Pre-Biased
Vce Saturation (Max) @ Ib, Ic: 300mV @ 2.5mA, 50mA
Current - Collector Cutoff (Max): 100nA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce: 70 @ 50mA, 5V
Supplier Device Package: PG-SOT23
Part Status: Last Time Buy
Current - Collector (Ic) (Max): 500 mA
Voltage - Collector Emitter Breakdown (Max): 50 V
Power - Max: 330 mW
Frequency - Transition: 100 MHz
Resistor - Base (R1): 2.2 kOhms
Resistor - Emitter Base (R2): 10 kOhms
Resistors Included: R1 and R2
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BCV27E6395HTMA1 bcv27_bcv47.pdf?folderId=db3a30431441fb5d011445c30f210183&fileId=db3a30431441fb5d011445cf7c3b0188
BCV27E6395HTMA1
Виробник: Infineon Technologies
Description: TRANS NPN DARL 30V 0.5A SOT23
Packaging: Tape & Reel (TR)
Package / Case: TO-236-3, SC-59, SOT-23-3
Mounting Type: Surface Mount
Transistor Type: NPN - Darlington
Operating Temperature: 150°C (TJ)
Vce Saturation (Max) @ Ib, Ic: 1V @ 100µA, 100mA
Current - Collector Cutoff (Max): 100nA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce: 20000 @ 100mA, 5V
Frequency - Transition: 170MHz
Supplier Device Package: PG-SOT23
Part Status: Last Time Buy
Current - Collector (Ic) (Max): 500 mA
Voltage - Collector Emitter Breakdown (Max): 30 V
Power - Max: 360 mW
Grade: Automotive
Qualification: AEC-Q101
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BCV47E6393HTSA1 bcv27_bcv47.pdf?folderId=db3a30431441fb5d011445c30f210183&fileId=db3a30431441fb5d011445cf7c3b0188
BCV47E6393HTSA1
Виробник: Infineon Technologies
Description: TRANS NPN DARL 60V 0.5A PG-SOT23
Packaging: Tape & Reel (TR)
Package / Case: TO-236-3, SC-59, SOT-23-3
Mounting Type: Surface Mount
Transistor Type: NPN - Darlington
Operating Temperature: 150°C (TJ)
Vce Saturation (Max) @ Ib, Ic: 1V @ 100µA, 100mA
Current - Collector Cutoff (Max): 100nA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce: 10000 @ 100mA, 5V
Frequency - Transition: 170MHz
Supplier Device Package: PG-SOT23
Part Status: Last Time Buy
Current - Collector (Ic) (Max): 500 mA
Voltage - Collector Emitter Breakdown (Max): 60 V
Power - Max: 360 mW
Grade: Automotive
Qualification: AEC-Q101
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BCW60FNE6393HTSA1 bcw60_bcx70.pdf
BCW60FNE6393HTSA1
Виробник: Infineon Technologies
Description: TRANS NPN 32V 0.1A PG-SOT23
Packaging: Tape & Reel (TR)
Package / Case: TO-236-3, SC-59, SOT-23-3
Mounting Type: Surface Mount
Transistor Type: NPN
Operating Temperature: 150°C (TJ)
Vce Saturation (Max) @ Ib, Ic: 550mV @ 1.25mA, 50mA
Current - Collector Cutoff (Max): 20nA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce: 380 @ 2mA, 5V
Frequency - Transition: 250MHz
Supplier Device Package: PG-SOT23
Part Status: Last Time Buy
Current - Collector (Ic) (Max): 100 mA
Voltage - Collector Emitter Breakdown (Max): 32 V
Power - Max: 330 mW
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BCW61E6384HTMA1 fundamentals-of-power-semiconductors
Виробник: Infineon Technologies
Description: TRANSISTOR AF SOT23
Packaging: Tape & Reel (TR)
Part Status: Last Time Buy
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BCW66KE6359HTMA1 fundamentals-of-power-semiconductors
BCW66KE6359HTMA1
Виробник: Infineon Technologies
Description: TRANS NPN 45V 0.8A PG-SOT23
Packaging: Tape & Reel (TR)
Package / Case: TO-236-3, SC-59, SOT-23-3
Mounting Type: Surface Mount
Transistor Type: NPN
Operating Temperature: 150°C (TJ)
Vce Saturation (Max) @ Ib, Ic: 450mV @ 50mA, 500mA
Current - Collector Cutoff (Max): 20nA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce: 40 @ 500mA, 1V
Frequency - Transition: 170MHz
Supplier Device Package: PG-SOT23
Part Status: Last Time Buy
Current - Collector (Ic) (Max): 800 mA
Voltage - Collector Emitter Breakdown (Max): 45 V
Power - Max: 500 mW
Grade: Automotive
Qualification: AEC-Q101
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BCW68E6359HTMA1 Part_Number_Guide_Web.pdf
Виробник: Infineon Technologies
Description: TRANSISTOR AF SOT23
Packaging: Tape & Reel (TR)
Part Status: Last Time Buy
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BAW78DH6327XTSA1 baw78_baw79series.pdf?folderId=db3a30431400ef6801141c4ed9df0449&fileId=db3a30431400ef6801141c5037ac044a
BAW78DH6327XTSA1
Виробник: Infineon Technologies
Description: DIODE GEN PURP 400V 1A SOT89
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BAW79DH6327XTSA1 baw78_baw79series.pdf?folderId=db3a30431400ef6801141c4ed9df0449&fileId=db3a30431400ef6801141c5037ac044a
BAW79DH6327XTSA1
Виробник: Infineon Technologies
Description: DIODE ARRAY GP 400V 500MA SOT89
Packaging: Tape & Reel (TR)
Package / Case: TO-243AA
Mounting Type: Surface Mount
Speed: Standard Recovery >500ns, > 200mA (Io)
Reverse Recovery Time (trr): 1 µs
Technology: Standard
Diode Configuration: 1 Pair Common Cathode
Current - Average Rectified (Io) (per Diode): 500mA
Supplier Device Package: PG-SOT89
Operating Temperature - Junction: 150°C (Max)
Part Status: Last Time Buy
Voltage - DC Reverse (Vr) (Max): 400 V
Voltage - Forward (Vf) (Max) @ If: 1.6 V @ 1 A
Current - Reverse Leakage @ Vr: 1 µA @ 400 V
Grade: Automotive
Qualification: AEC-Q101
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BCV28H6327XTSA1 BCV28_48.pdf
BCV28H6327XTSA1
Виробник: Infineon Technologies
Description: TRANS PNP DARL 30V 0.5A SOT89
Packaging: Tape & Reel (TR)
Package / Case: TO-243AA
Mounting Type: Surface Mount
Transistor Type: PNP - Darlington
Operating Temperature: 150°C (TJ)
Vce Saturation (Max) @ Ib, Ic: 1V @ 100µA, 100mA
Current - Collector Cutoff (Max): 100nA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce: 20000 @ 100mA, 5V
Frequency - Transition: 200MHz
Supplier Device Package: PG-SOT89
Grade: Automotive
Current - Collector (Ic) (Max): 500 mA
Voltage - Collector Emitter Breakdown (Max): 30 V
Power - Max: 1 W
Qualification: AEC-Q101
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BCV29H6327XTSA1 BCV29_49.pdf
BCV29H6327XTSA1
Виробник: Infineon Technologies
Description: TRANS NPN DARL 30V 0.5A SOT89
Packaging: Tape & Reel (TR)
Package / Case: TO-243AA
Mounting Type: Surface Mount
Transistor Type: NPN - Darlington
Operating Temperature: 150°C (TJ)
Vce Saturation (Max) @ Ib, Ic: 1V @ 100µA, 100mA
Current - Collector Cutoff (Max): 100nA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce: 20000 @ 100mA, 5V
Frequency - Transition: 150MHz
Supplier Device Package: PG-SOT89
Grade: Automotive
Current - Collector (Ic) (Max): 500 mA
Voltage - Collector Emitter Breakdown (Max): 30 V
Power - Max: 1 W
Qualification: AEC-Q101
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BCX51H6327XTSA1 infineon-bcx51-bcx52-bcx53-ds-en.pdf
BCX51H6327XTSA1
Виробник: Infineon Technologies
Description: TRANS PNP 45V 1A PG-SOT89
Packaging: Tape & Reel (TR)
Package / Case: TO-243AA
Mounting Type: Surface Mount
Transistor Type: PNP
Operating Temperature: 150°C (TJ)
Vce Saturation (Max) @ Ib, Ic: 500mV @ 50mA, 500mA
Current - Collector Cutoff (Max): 100nA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce: 40 @ 150mA, 2V
Frequency - Transition: 125MHz
Supplier Device Package: PG-SOT89
Part Status: Not For New Designs
Current - Collector (Ic) (Max): 1 A
Voltage - Collector Emitter Breakdown (Max): 45 V
Power - Max: 2 W
Grade: Automotive
Qualification: AEC-Q101
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BCX5216H6327XTSA1 infineon-bcx51-bcx52-bcx53-ds-en.pdf
BCX5216H6327XTSA1
Виробник: Infineon Technologies
Description: TRANS PNP 60V 1A PG-SOT89
Packaging: Tape & Reel (TR)
Package / Case: TO-243AA
Mounting Type: Surface Mount
Transistor Type: PNP
Operating Temperature: 150°C (TJ)
Vce Saturation (Max) @ Ib, Ic: 500mV @ 50mA, 500mA
Current - Collector Cutoff (Max): 100nA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce: 100 @ 150mA, 2V
Frequency - Transition: 125MHz
Supplier Device Package: PG-SOT89
Part Status: Last Time Buy
Current - Collector (Ic) (Max): 1 A
Voltage - Collector Emitter Breakdown (Max): 60 V
Power - Max: 2 W
Grade: Automotive
Qualification: AEC-Q101
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BCX52H6327XTSA1 infineon-bcx51-bcx52-bcx53-ds-en.pdf
BCX52H6327XTSA1
Виробник: Infineon Technologies
Description: TRANS PNP 60V 1A PG-SOT89
Packaging: Tape & Reel (TR)
Package / Case: TO-243AA
Mounting Type: Surface Mount
Transistor Type: PNP
Operating Temperature: 150°C (TJ)
Vce Saturation (Max) @ Ib, Ic: 500mV @ 50mA, 500mA
Current - Collector Cutoff (Max): 100nA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce: 40 @ 150mA, 2V
Frequency - Transition: 125MHz
Supplier Device Package: PG-SOT89
Part Status: Last Time Buy
Current - Collector (Ic) (Max): 1 A
Voltage - Collector Emitter Breakdown (Max): 60 V
Power - Max: 2 W
Grade: Automotive
Qualification: AEC-Q101
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BCX5310H6327XTSA1 infineon-bcx51-bcx52-bcx53-ds-en.pdf
BCX5310H6327XTSA1
Виробник: Infineon Technologies
Description: TRANS PNP 80V 1A PG-SOT89
Packaging: Tape & Reel (TR)
Package / Case: TO-243AA
Mounting Type: Surface Mount
Transistor Type: PNP
Operating Temperature: 150°C (TJ)
Vce Saturation (Max) @ Ib, Ic: 500mV @ 50mA, 500mA
Current - Collector Cutoff (Max): 100nA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce: 63 @ 150mA, 2V
Frequency - Transition: 125MHz
Supplier Device Package: PG-SOT89
Part Status: Last Time Buy
Current - Collector (Ic) (Max): 1 A
Voltage - Collector Emitter Breakdown (Max): 80 V
Power - Max: 2 W
Grade: Automotive
Qualification: AEC-Q101
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BCX53H6327XTSA1 infineon-bcx51-bcx52-bcx53-ds-en.pdf
BCX53H6327XTSA1
Виробник: Infineon Technologies
Description: TRANS PNP 80V 1A PG-SOT89
Packaging: Tape & Reel (TR)
Package / Case: TO-243AA
Mounting Type: Surface Mount
Transistor Type: PNP
Operating Temperature: 150°C (TJ)
Vce Saturation (Max) @ Ib, Ic: 500mV @ 50mA, 500mA
Current - Collector Cutoff (Max): 100nA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce: 40 @ 150mA, 2V
Frequency - Transition: 125MHz
Supplier Device Package: PG-SOT89
Part Status: Last Time Buy
Current - Collector (Ic) (Max): 1 A
Voltage - Collector Emitter Breakdown (Max): 80 V
Power - Max: 2 W
Grade: Automotive
Qualification: AEC-Q101
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BCX5516H6327XTSA1 bcx54_bcx55_bcx56.pdf?folderId=db3a304314dca38901155ffc06d51dc7&fileId=db3a3043156fd573011589d20fda0368
BCX5516H6327XTSA1
Виробник: Infineon Technologies
Description: TRANS NPN 60V 1A PG-SOT89
Packaging: Tape & Reel (TR)
Package / Case: TO-243AA
Mounting Type: Surface Mount
Transistor Type: NPN
Operating Temperature: 150°C (TJ)
Vce Saturation (Max) @ Ib, Ic: 500mV @ 50mA, 500mA
Current - Collector Cutoff (Max): 100nA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce: 100 @ 150mA, 2V
Frequency - Transition: 100MHz
Supplier Device Package: PG-SOT89
Part Status: Last Time Buy
Current - Collector (Ic) (Max): 1 A
Voltage - Collector Emitter Breakdown (Max): 60 V
Power - Max: 2 W
Grade: Automotive
Qualification: AEC-Q101
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BCX5516H6433XTMA1 bcx54_bcx55_bcx56.pdf?folderId=db3a304314dca38901155ffc06d51dc7&fileId=db3a3043156fd573011589d20fda0368
BCX5516H6433XTMA1
Виробник: Infineon Technologies
Description: TRANS NPN 60V 1A PG-SOT89
Packaging: Tape & Reel (TR)
Package / Case: TO-243AA
Mounting Type: Surface Mount
Transistor Type: NPN
Operating Temperature: 150°C (TJ)
Vce Saturation (Max) @ Ib, Ic: 500mV @ 50mA, 500mA
Current - Collector Cutoff (Max): 100nA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce: 100 @ 150mA, 2V
Frequency - Transition: 100MHz
Supplier Device Package: PG-SOT89
Part Status: Last Time Buy
Current - Collector (Ic) (Max): 1 A
Voltage - Collector Emitter Breakdown (Max): 60 V
Power - Max: 2 W
Grade: Automotive
Qualification: AEC-Q101
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BCX5616H6433XTMA1 bcx54_bcx55_bcx56.pdf?folderId=db3a304314dca38901155ffc06d51dc7&fileId=db3a3043156fd573011589d20fda0368
BCX5616H6433XTMA1
Виробник: Infineon Technologies
Description: TRANS NPN 80V 1A PG-SOT89
Packaging: Tape & Reel (TR)
Package / Case: TO-243AA
Mounting Type: Surface Mount
Transistor Type: NPN
Operating Temperature: 150°C (TJ)
Vce Saturation (Max) @ Ib, Ic: 500mV @ 50mA, 500mA
Current - Collector Cutoff (Max): 100nA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce: 100 @ 150mA, 2V
Frequency - Transition: 100MHz
Supplier Device Package: PG-SOT89
Part Status: Last Time Buy
Current - Collector (Ic) (Max): 1 A
Voltage - Collector Emitter Breakdown (Max): 80 V
Power - Max: 2 W
Grade: Automotive
Qualification: AEC-Q101
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BCX56H6327XTSA1 bcx54_bcx55_bcx56.pdf?folderId=db3a304314dca38901155ffc06d51dc7&fileId=db3a3043156fd573011589d20fda0368
BCX56H6327XTSA1
Виробник: Infineon Technologies
Description: TRANS NPN 80V 1A PG-SOT89
Packaging: Tape & Reel (TR)
Package / Case: TO-243AA
Mounting Type: Surface Mount
Transistor Type: NPN
Operating Temperature: 150°C (TJ)
Vce Saturation (Max) @ Ib, Ic: 500mV @ 50mA, 500mA
Current - Collector Cutoff (Max): 100nA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce: 40 @ 150mA, 2V
Frequency - Transition: 100MHz
Supplier Device Package: PG-SOT89
Part Status: Last Time Buy
Current - Collector (Ic) (Max): 1 A
Voltage - Collector Emitter Breakdown (Max): 80 V
Power - Max: 2 W
Grade: Automotive
Qualification: AEC-Q101
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BCX6816H6327XTSA1 bcx68.pdf?folderId=db3a304314dca38901155ffc06d51dc7&fileId=db3a3043156fd573011589ef403903e7
BCX6816H6327XTSA1
Виробник: Infineon Technologies
Description: TRANS NPN 20V 1A PG-SOT89
Packaging: Tape & Reel (TR)
Package / Case: TO-243AA
Mounting Type: Surface Mount
Transistor Type: NPN
Operating Temperature: 150°C (TJ)
Vce Saturation (Max) @ Ib, Ic: 500mV @ 100mA, 1A
Current - Collector Cutoff (Max): 100nA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce: 100 @ 500mA, 1V
Frequency - Transition: 100MHz
Supplier Device Package: PG-SOT89
Part Status: Last Time Buy
Current - Collector (Ic) (Max): 1 A
Voltage - Collector Emitter Breakdown (Max): 20 V
Power - Max: 3 W
Grade: Automotive
Qualification: AEC-Q101
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BCX6910H6327XTSA1 bcx69.pdf?folderId=db3a304314dca38901155ffc06d51dc7&fileId=db3a3043156fd573011589f3f56603ee&location=.en.product.findProductTypeByName.html_dgdl_bcx69.pdf
BCX6910H6327XTSA1
Виробник: Infineon Technologies
Description: TRANS PNP 20V 1A PG-SOT89
Packaging: Tape & Reel (TR)
Package / Case: TO-243AA
Mounting Type: Surface Mount
Transistor Type: PNP
Operating Temperature: 150°C (TJ)
Vce Saturation (Max) @ Ib, Ic: 500mV @ 100mA, 1A
Current - Collector Cutoff (Max): 100nA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce: 85 @ 500mA, 1V
Frequency - Transition: 100MHz
Supplier Device Package: PG-SOT89
Grade: Automotive
Current - Collector (Ic) (Max): 1 A
Voltage - Collector Emitter Breakdown (Max): 20 V
Power - Max: 3 W
Qualification: AEC-Q101
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BCX6916H6327XTSA1 bcx69.pdf?folderId=db3a304314dca38901155ffc06d51dc7&fileId=db3a3043156fd573011589f3f56603ee&location=.en.product.findProductTypeByName.html_dgdl_bcx69.pdf
BCX6916H6327XTSA1
Виробник: Infineon Technologies
Description: TRANS PNP 20V 1A PG-SOT89
Packaging: Tape & Reel (TR)
Package / Case: TO-243AA
Mounting Type: Surface Mount
Transistor Type: PNP
Operating Temperature: 150°C (TJ)
Vce Saturation (Max) @ Ib, Ic: 500mV @ 100mA, 1A
Current - Collector Cutoff (Max): 100nA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce: 100 @ 500mA, 1V
Frequency - Transition: 100MHz
Supplier Device Package: PG-SOT89
Part Status: Last Time Buy
Current - Collector (Ic) (Max): 1 A
Voltage - Collector Emitter Breakdown (Max): 20 V
Power - Max: 3 W
Grade: Automotive
Qualification: AEC-Q101
товару немає в наявності
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BCX6925H6327XTSA1 bcx69.pdf?folderId=db3a304314dca38901155ffc06d51dc7&fileId=db3a3043156fd573011589f3f56603ee&location=.en.product.findProductTypeByName.html_dgdl_bcx69.pdf
BCX6925H6327XTSA1
Виробник: Infineon Technologies
Description: TRANS PNP 20V 1A PG-SOT89
Packaging: Tape & Reel (TR)
Package / Case: TO-243AA
Mounting Type: Surface Mount
Transistor Type: PNP
Operating Temperature: 150°C (TJ)
Vce Saturation (Max) @ Ib, Ic: 500mV @ 100mA, 1A
Current - Collector Cutoff (Max): 100nA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce: 160 @ 500mA, 1V
Frequency - Transition: 100MHz
Supplier Device Package: PG-SOT89
Grade: Automotive
Current - Collector (Ic) (Max): 1 A
Voltage - Collector Emitter Breakdown (Max): 20 V
Power - Max: 3 W
Qualification: AEC-Q101
товару немає в наявності
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BFN18H6327XTSA1 bfn18.pdf?folderId=db3a30431441fb5d011449af3ad90232&fileId=db3a30431441fb5d011449b188060234
BFN18H6327XTSA1
Виробник: Infineon Technologies
Description: TRANSISTOR AF SOT89-4
товару немає в наявності
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BFN19H6327XTSA1 bfn19.pdf?folderId=db3a30431441fb5d011449af3ad90232&fileId=db3a30431441fb5d011449c1d62e0238
BFN19H6327XTSA1
Виробник: Infineon Technologies
Description: TRANS PNP 300V 0.2A SOT89
Packaging: Tape & Reel (TR)
Package / Case: TO-243AA
Mounting Type: Surface Mount
Transistor Type: PNP
Operating Temperature: 150°C (TJ)
Vce Saturation (Max) @ Ib, Ic: 500mV @ 2mA, 20mA
Current - Collector Cutoff (Max): 100nA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce: 30 @ 30mA, 10V
Frequency - Transition: 100MHz
Supplier Device Package: PG-SOT89
Grade: Automotive
Current - Collector (Ic) (Max): 200 mA
Voltage - Collector Emitter Breakdown (Max): 300 V
Power - Max: 1 W
Qualification: AEC-Q101
товару немає в наявності
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FF150R17KE4HOSA1 Infineon-FF150R17KE4-DS-v02_02-en_de.pdf?fileId=db3a3043294a3558012959da50bd7c47
Виробник: Infineon Technologies
Description: MODULE IGBT 1700V AG-62MM-1
товару немає в наявності
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BSM100GB170DN2HOSA1 BSM_100_GB_170_DN2.pdf
Виробник: Infineon Technologies
Description: IGBT MOD 1700V 145A 1000W
Packaging: Tray
Package / Case: Module
Mounting Type: Chassis Mount
Input: Standard
Configuration: Half Bridge
Operating Temperature: 150°C (TJ)
Vce(on) (Max) @ Vge, Ic: 3.9V @ 15V, 100A
NTC Thermistor: No
Supplier Device Package: Module
Current - Collector (Ic) (Max): 145 A
Voltage - Collector Emitter Breakdown (Max): 1700 V
Power - Max: 1000 W
Current - Collector Cutoff (Max): 1 mA
Input Capacitance (Cies) @ Vce: 16 nF @ 25 V
товару немає в наявності
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BSM150GB170DN2HOSA1 BSM_150_GB_170_DN2.pdf
Виробник: Infineon Technologies
Description: IGBT MOD 1700V 220A 1250W MOD
Packaging: Tray
Package / Case: Module
Mounting Type: Chassis Mount
Input: Standard
Configuration: Half Bridge
Operating Temperature: 150°C (TJ)
Vce(on) (Max) @ Vge, Ic: 3.9V @ 15V, 150A
NTC Thermistor: No
Supplier Device Package: Module
Part Status: Obsolete
Current - Collector (Ic) (Max): 220 A
Voltage - Collector Emitter Breakdown (Max): 1700 V
Power - Max: 1250 W
Current - Collector Cutoff (Max): 1.5 mA
Input Capacitance (Cies) @ Vce: 20 nF @ 25 V
товару немає в наявності
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BSM300GA170DN2HOSA1 BSM_300_GA_170_DN2.pdf
Виробник: Infineon Technologies
Description: IGBT MOD 1700V 440A 2500W
Packaging: Tray
Package / Case: Module
Mounting Type: Chassis Mount
Input: Standard
Configuration: Single
Operating Temperature: 150°C (TJ)
Vce(on) (Max) @ Vge, Ic: 3.9V @ 15V, 300A
NTC Thermistor: No
Supplier Device Package: Module
Current - Collector (Ic) (Max): 440 A
Voltage - Collector Emitter Breakdown (Max): 1700 V
Power - Max: 2500 W
Current - Collector Cutoff (Max): 3 mA
товару немає в наявності
В кошику  од. на суму  грн.
TLV493DA1B6HTSA2 TLV493D-A1B6_Rev1.1_4-9-19.pdf
TLV493DA1B6HTSA2
Виробник: Infineon Technologies
Description: SENSOR ROTARY 360DEG SMD
Packaging: Tape & Reel (TR)
Package / Case: SOT-23-6 Thin, TSOT-23-6
Mounting Type: Surface Mount
Output: I2C
Operating Temperature: -40°C ~ 125°C
Termination Style: SMD (SMT) Tab
Voltage - Supply: 2.7V ~ 3.5V
Actuator Type: External Magnet, Not Included
Technology: Hall Effect
For Measuring: Linear, Rotary Position
Supplier Device Package: PG-TSOP-6-6-5
Rotation Angle - Electrical, Mechanical: 0° ~ 360°, Continuous
Part Status: Active
Grade: Automotive
Qualification: AEC-Q100
на замовлення 12000 шт:
термін постачання 21-31 дні (днів)
Кількість Ціна
3000+33.67 грн
6000+31.31 грн
9000+30.70 грн
Мінімальне замовлення: 3000
В кошику  од. на суму  грн.
TLV493DA1B62GOKITTOBO1 TLV493D-A1B6_Rev1.1_4-9-19.pdf
TLV493DA1B62GOKITTOBO1
Виробник: Infineon Technologies
Description: 3D MAGNETICS SENSOR 2GO KIT-TL
Packaging: Bulk
Interface: I2C
Voltage - Supply: 2.7V ~ 3.5V
Sensor Type: Magnetic, Linear, Rotary Position
Utilized IC / Part: TLV493D-A1B6
Supplied Contents: Board(s)
Part Status: Obsolete
Contents: Board(s)
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TLV493DA1B6HTSA2 TLV493D-A1B6_Rev1.1_4-9-19.pdf
TLV493DA1B6HTSA2
Виробник: Infineon Technologies
Description: SENSOR ROTARY 360DEG SMD
Packaging: Cut Tape (CT)
Package / Case: SOT-23-6 Thin, TSOT-23-6
Mounting Type: Surface Mount
Output: I2C
Operating Temperature: -40°C ~ 125°C
Termination Style: SMD (SMT) Tab
Voltage - Supply: 2.7V ~ 3.5V
Actuator Type: External Magnet, Not Included
Technology: Hall Effect
For Measuring: Linear, Rotary Position
Supplier Device Package: PG-TSOP-6-6-5
Rotation Angle - Electrical, Mechanical: 0° ~ 360°, Continuous
Part Status: Active
Grade: Automotive
Qualification: AEC-Q100
на замовлення 12300 шт:
термін постачання 21-31 дні (днів)
Кількість Ціна
6+58.10 грн
7+49.08 грн
10+46.52 грн
25+40.83 грн
50+38.91 грн
100+37.14 грн
500+33.06 грн
1000+31.77 грн
Мінімальне замовлення: 6
В кошику  од. на суму  грн.
BFP780H6327XTSA1 Infineon-BFP780-DS-v04_00-EN.pdf?fileId=5546d46265f064ff01663896b2fe4eb3
BFP780H6327XTSA1
Виробник: Infineon Technologies
Description: RF TRANS NPN 6.1V 900MHZ SOT343
Packaging: Cut Tape (CT)
Package / Case: SC-82A, SOT-343
Mounting Type: Surface Mount
Transistor Type: NPN
Operating Temperature: 150°C (TJ)
Gain: 27dB
Power - Max: 600mW
Current - Collector (Ic) (Max): 120mA
Voltage - Collector Emitter Breakdown (Max): 6.1V
DC Current Gain (hFE) (Min) @ Ic, Vce: 85 @ 90mA, 5V
Frequency - Transition: 900MHz
Noise Figure (dB Typ @ f): 1.2dB ~ 2.4dB @ 900MHz ~ 3.5GHz
Supplier Device Package: PG-SOT343-4-1
Part Status: Obsolete
товару немає в наявності
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BSC009NE2LS5ATMA1 Infineon-BSC009NE2LS5-DS-v02_00-EN.pdf?fileId=5546d4624bcaebcf014c096c7c152310
BSC009NE2LS5ATMA1
Виробник: Infineon Technologies
Description: MOSFET N-CH 25V 41A/223A TDSON
Packaging: Tape & Reel (TR)
Package / Case: 8-PowerTDFN
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 41A (Ta), 223A (Tc)
Rds On (Max) @ Id, Vgs: 0.9mOhm @ 30A, 10V
Power Dissipation (Max): 2.5W (Ta), 74W (Tc)
Vgs(th) (Max) @ Id: 2V @ 250µA
Supplier Device Package: PG-TDSON-8-7
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±16V
Drain to Source Voltage (Vdss): 25 V
Gate Charge (Qg) (Max) @ Vgs: 57 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 3900 pF @ 12 V
на замовлення 10000 шт:
термін постачання 21-31 дні (днів)
Кількість Ціна
5000+48.53 грн
Мінімальне замовлення: 5000
В кошику  од. на суму  грн.
BSC009NE2LS5IATMA1 Infineon-BSC009NE2LS5I-DS-v02_00-EN.pdf?fileId=5546d4624bcaebcf014c09a38586234e
BSC009NE2LS5IATMA1
Виробник: Infineon Technologies
Description: MOSFET N-CH 25V 40A/217A TDSON
Packaging: Tape & Reel (TR)
Package / Case: 8-PowerTDFN
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 40A (Ta), 217A (Tc)
Rds On (Max) @ Id, Vgs: 0.95mOhm @ 30A, 10V
Power Dissipation (Max): 2.5W (Ta), 74W (Tc)
Vgs(th) (Max) @ Id: 2V @ 250µA
Supplier Device Package: PG-TDSON-8-7
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±16V
Drain to Source Voltage (Vdss): 25 V
Gate Charge (Qg) (Max) @ Vgs: 49 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 3200 pF @ 12 V
на замовлення 5000 шт:
термін постачання 21-31 дні (днів)
Кількість Ціна
5000+56.62 грн
Мінімальне замовлення: 5000
В кошику  од. на суму  грн.
IRF8252TRPBF-1 irf8252pbf-1.pdf?fileId=5546d462533600a40153560d053a1d56
IRF8252TRPBF-1
Виробник: Infineon Technologies
Description: MOSFET N-CH 25V 25A 8SO
Packaging: Tape & Reel (TR)
Package / Case: 8-SOIC (0.154", 3.90mm Width)
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 25A (Ta)
Rds On (Max) @ Id, Vgs: 2.7mOhm @ 25A, 10V
Power Dissipation (Max): 2.5W (Ta)
Vgs(th) (Max) @ Id: 2.35V @ 100µA
Supplier Device Package: PG-DSO-8
Part Status: Obsolete
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 25 V
Gate Charge (Qg) (Max) @ Vgs: 53 nC @ 4.5 V
Input Capacitance (Ciss) (Max) @ Vds: 5305 pF @ 13 V
товару немає в наявності
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IRFH7187TRPBF irfh7187pbf.pdf
Виробник: Infineon Technologies
Description: MOSFET N-CH 100V 18A/105A 8PQFN
Packaging: Tape & Reel (TR)
Package / Case: 8-PowerVDFN
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 18A (Ta), 105A (Tc)
Rds On (Max) @ Id, Vgs: 6mOhm @ 50A, 10V
Power Dissipation (Max): 3.8W (Ta), 132W (Tc)
Vgs(th) (Max) @ Id: 3.6V @ 150µA
Supplier Device Package: 8-PQFN (5x6)
Part Status: Obsolete
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 100 V
Gate Charge (Qg) (Max) @ Vgs: 50 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 2116 pF @ 50 V
товару немає в наявності
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62-0209PBF
Виробник: Infineon Technologies
Description: DIODE SHOCTTKY
товару немає в наявності
В кошику  од. на суму  грн.
62-0216PBF
Виробник: Infineon Technologies
Description: DIODE SHOCTTKY
товару немає в наявності
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62-0239PBF
Виробник: Infineon Technologies
Description: DIODE SHOCTTKY
товару немає в наявності
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62-0245PBF
Виробник: Infineon Technologies
Description: DIODE SHOCTTKY
товару немає в наявності
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62-0253PBF
Виробник: Infineon Technologies
Description: DIODE SHOCTTKY
товару немає в наявності
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62-0254PBF Part_Number_Guide_Web.pdf
Виробник: Infineon Technologies
Description: DIODE SHOCTTKY
товару немає в наявності
В кошику  од. на суму  грн.
BSC265N10LSFGATMA1 BSC265N10LSF+G_+Rev2.06.pdf?folderId=db3a304313b8b5a60113cee8763b02d7&fileId=db3a30431b3e89eb011b49a375207b46
BSC265N10LSFGATMA1
Виробник: Infineon Technologies
Description: MOSFET N-CH 100V 6.5A/40A TDSON
Packaging: Cut Tape (CT)
Package / Case: 8-PowerTDFN
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 6.5A (Ta), 40A (Tc)
Rds On (Max) @ Id, Vgs: 26.5mOhm @ 20A, 10V
Power Dissipation (Max): 78W (Tc)
Vgs(th) (Max) @ Id: 2.4V @ 43µA
Supplier Device Package: PG-TDSON-8-1
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 100 V
Gate Charge (Qg) (Max) @ Vgs: 21 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 1600 pF @ 50 V
на замовлення 13438 шт:
термін постачання 21-31 дні (днів)
Кількість Ціна
4+106.24 грн
10+64.50 грн
100+42.88 грн
500+31.54 грн
1000+28.74 грн
2000+27.45 грн
Мінімальне замовлення: 4
В кошику  од. на суму  грн.
IPD048N06L3GBTMA1 IPD048N06L3_Rev2.0.pdf?folderId=db3a30431441fb5d01148ca9f1be0e77&fileId=db3a30431ddc9372011e2b4f496e4db0
IPD048N06L3GBTMA1
Виробник: Infineon Technologies
Description: MOSFET N-CH 60V 90A TO252-3
Packaging: Cut Tape (CT)
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 90A (Tc)
Rds On (Max) @ Id, Vgs: 4.8mOhm @ 90A, 10V
Power Dissipation (Max): 115W (Tc)
Vgs(th) (Max) @ Id: 2.2V @ 58µA
Supplier Device Package: PG-TO252-3
Part Status: Obsolete
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 60 V
Gate Charge (Qg) (Max) @ Vgs: 50 nC @ 4.5 V
Input Capacitance (Ciss) (Max) @ Vds: 8400 pF @ 30 V
товару немає в наявності
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1EBN1001AEXUMA1 Infineon-1EBN1001AE-DS-v03_00-EN.pdf?fileId=5546d462503812bb01505fa4d89805a0
1EBN1001AEXUMA1
Виробник: Infineon Technologies
Description: IC GATE DRVR HI/LOW SIDE 14SOIC
Packaging: Tape & Reel (TR)
Package / Case: 14-SOIC (0.154", 3.90mm Width) Exposed Pad
Mounting Type: Surface Mount
Operating Temperature: -40°C ~ 150°C (TJ)
Voltage - Supply: 13V ~ 18V
High Side Voltage - Max (Bootstrap): 1200 V
Supplier Device Package: PG-DSO-14-43
Rise / Fall Time (Typ): 50ns, 90ns
Channel Type: Single
Driven Configuration: High-Side or Low-Side
Number of Drivers: 1
Gate Type: IGBT, MOSFET (N-Channel, P-Channel)
Logic Voltage - VIL, VIH: 1.5V, 3.5V
Part Status: Active
DigiKey Programmable: Not Verified
Grade: Automotive
Qualification: AEC-Q100
товару немає в наявності
В кошику  од. на суму  грн.
1ED020I12B2XUMA1 Infineon-1ED020I12-B2-DataSheet-v02_02-EN.pdf?fileId=db3a304333227b5e013344bf16f84ca6
1ED020I12B2XUMA1
Виробник: Infineon Technologies
Description: DGT ISO 4.5KV 1CH GT DVR DSO16
Packaging: Tape & Reel (TR)
Package / Case: 16-SOIC (0.295", 7.50mm Width)
Mounting Type: Surface Mount
Operating Temperature: -40°C ~ 150°C (TJ)
Technology: Magnetic Coupling
Current - Output High, Low: 2A, 2A
Voltage - Isolation: 4500Vrms
Supplier Device Package: PG-DSO-16-15
Rise / Fall Time (Typ): 30ns, 50ns
Part Status: Active
Number of Channels: 1
Voltage - Output Supply: 13V ~ 20V
на замовлення 4000 шт:
термін постачання 21-31 дні (днів)
Кількість Ціна
1000+195.98 грн
2000+184.48 грн
3000+182.36 грн
Мінімальне замовлення: 1000
В кошику  од. на суму  грн.
1ED020I12FA2XUMA2 Infineon-1ED020I12FA2-DS-v02_00-en.pdf?fileId=db3a304333227b5e013344d078be4cdf
1ED020I12FA2XUMA2
Виробник: Infineon Technologies
Description: DGTL ISO 4.5KV 1CH GT DVR DSO20
Packaging: Tape & Reel (TR)
Package / Case: 20-SOIC (0.295", 7.50mm Width)
Mounting Type: Surface Mount
Operating Temperature: -40°C ~ 150°C (TJ)
Technology: Magnetic Coupling
Current - Output High, Low: 2A, 2A
Voltage - Isolation: 4500Vrms
Supplier Device Package: PG-DSO-20
Rise / Fall Time (Typ): 30ns, 50ns
Part Status: Not For New Designs
Number of Channels: 1
Voltage - Output Supply: 13V ~ 20V
Grade: Automotive
Qualification: AEC-Q100
на замовлення 3000 шт:
термін постачання 21-31 дні (днів)
Кількість Ціна
1000+283.47 грн
Мінімальне замовлення: 1000
В кошику  од. на суму  грн.
1ED020I12FTAXUMA2 Infineon-1ED020I12FTA-DS-v03_00-EN.pdf?fileId=db3a30432e779412012e7b85bdb73874
1ED020I12FTAXUMA2
Виробник: Infineon Technologies
Description: DGT ISO 4.5KV 1CH GT DVR DSO20
Packaging: Tape & Reel (TR)
Package / Case: 20-SOIC (0.295", 7.50mm Width)
Mounting Type: Surface Mount
Operating Temperature: -40°C ~ 150°C (TJ)
Technology: Magnetic Coupling
Current - Output High, Low: 2A, 2A
Voltage - Isolation: 4500Vrms
Supplier Device Package: PG-DSO-20-55
Rise / Fall Time (Typ): 30ns, 20ns
Part Status: Not For New Designs
Number of Channels: 1
Voltage - Output Supply: 4.5V ~ 5.5V
на замовлення 1000 шт:
термін постачання 21-31 дні (днів)
Кількість Ціна
1000+283.93 грн
Мінімальне замовлення: 1000
В кошику  од. на суму  грн.
1EDI05I12AFXUMA1 Infineon--DS-v02_00-EN.pdf?fileId=db3a3043427ac3e201428e648a333734
1EDI05I12AFXUMA1
Виробник: Infineon Technologies
Description: DIGITAL ISO 1CH GATE DVR DSO8-51
Packaging: Tape & Reel (TR)
Package / Case: 8-SOIC (0.154", 3.90mm Width)
Mounting Type: Surface Mount
Operating Temperature: -40°C ~ 150°C (TJ)
Technology: Magnetic Coupling
Supplier Device Package: PG-DSO-8-51
Rise / Fall Time (Typ): 10ns, 9ns
Number of Channels: 1
Voltage - Output Supply: 13V ~ 35V
на замовлення 10000 шт:
термін постачання 21-31 дні (днів)
Кількість Ціна
2500+58.29 грн
5000+54.05 грн
Мінімальне замовлення: 2500
В кошику  од. на суму  грн.
1EDI2001ASXUMA2 1EDI2001AS.pdf
1EDI2001ASXUMA2
Виробник: Infineon Technologies
Description: DGT ISO 3.75KV 1CH GT DVR DSO36
Packaging: Tape & Reel (TR)
Package / Case: 36-BSSOP (0.295", 7.50mm Width)
Mounting Type: Surface Mount
Operating Temperature: -40°C ~ 150°C (TJ)
Technology: Magnetic Coupling
Current - Output High, Low: 1A, 1A
Voltage - Isolation: 3750Vrms
Supplier Device Package: PG-DSO-36-63
Rise / Fall Time (Typ): 30ns, 60ns
Number of Channels: 1
Voltage - Output Supply: 13V ~ 18V
товару немає в наявності
В кошику  од. на суму  грн.
1EDI20I12MFXUMA1 Infineon-1EDIXXI12MF-DS-v02_00-EN.pdf?fileId=5546d46145f1f3a401462944e0190fd7
1EDI20I12MFXUMA1
Виробник: Infineon Technologies
Description: DIGITAL ISO 1CH GATE DVR DSO8-51
Packaging: Tape & Reel (TR)
Package / Case: 8-SOIC (0.154", 3.90mm Width)
Mounting Type: Surface Mount
Operating Temperature: -40°C ~ 150°C (TJ)
Technology: Magnetic Coupling
Supplier Device Package: PG-DSO-8-51
Rise / Fall Time (Typ): 9ns, 6ns
Number of Channels: 1
Voltage - Output Supply: 13V ~ 18V
на замовлення 2500 шт:
термін постачання 21-31 дні (днів)
Кількість Ціна
2500+60.10 грн
Мінімальне замовлення: 2500
В кошику  од. на суму  грн.
1EDI20N12AFXUMA1 Infineon-1EDI20N12AF-DS-v02_00-EN.pdf?fileId=5546d4614755559a014790299add6112
1EDI20N12AFXUMA1
Виробник: Infineon Technologies
Description: DIGITAL ISO 1CH GATE DVR DSO8-51
Packaging: Tape & Reel (TR)
Package / Case: 8-SOIC (0.154", 3.90mm Width)
Mounting Type: Surface Mount
Operating Temperature: -40°C ~ 150°C (TJ)
Technology: Magnetic Coupling
Supplier Device Package: PG-DSO-8-51
Rise / Fall Time (Typ): 10ns, 9ns
Number of Channels: 1
Voltage - Output Supply: 10V ~ 35V
на замовлення 10000 шт:
термін постачання 21-31 дні (днів)
Кількість Ціна
2500+55.84 грн
5000+52.57 грн
7500+51.97 грн
Мінімальне замовлення: 2500
В кошику  од. на суму  грн.
1EDI30I12MFXUMA1 Infineon-1EDIXXI12MF-DS-v02_00-EN.pdf?fileId=5546d46145f1f3a401462944e0190fd7
1EDI30I12MFXUMA1
Виробник: Infineon Technologies
Description: DIGITAL ISO 1CH GATE DVR DSO8-51
Packaging: Tape & Reel (TR)
Package / Case: 8-SOIC (0.154", 3.90mm Width)
Mounting Type: Surface Mount
Operating Temperature: -40°C ~ 150°C (TJ)
Technology: Magnetic Coupling
Supplier Device Package: PG-DSO-8-51
Rise / Fall Time (Typ): 9ns, 6ns
Part Status: Active
Number of Channels: 1
Voltage - Output Supply: 13V ~ 18V
товару немає в наявності
В кошику  од. на суму  грн.
1EDI40I12AFXUMA1 Infineon--DS-v02_00-EN.pdf?fileId=db3a3043427ac3e201428e648a333734
1EDI40I12AFXUMA1
Виробник: Infineon Technologies
Description: DIGITAL ISO 1CH GATE DVR DSO8-51
Packaging: Tape & Reel (TR)
Package / Case: 8-SOIC (0.154", 3.90mm Width)
Mounting Type: Surface Mount
Operating Temperature: -40°C ~ 150°C (TJ)
Technology: Magnetic Coupling
Supplier Device Package: PG-DSO-8-51
Rise / Fall Time (Typ): 10ns, 9ns
Number of Channels: 1
Voltage - Output Supply: 13V ~ 35V
на замовлення 7500 шт:
термін постачання 21-31 дні (днів)
Кількість Ціна
2500+64.40 грн
5000+59.71 грн
Мінімальне замовлення: 2500
В кошику  од. на суму  грн.
1EDI60I12AFXUMA1 Infineon--DS-v02_00-EN.pdf?fileId=db3a3043427ac3e201428e648a333734
1EDI60I12AFXUMA1
Виробник: Infineon Technologies
Description: DIGITAL ISO 1CH GATE DVR DSO8-51
Packaging: Tape & Reel (TR)
Package / Case: 8-SOIC (0.154", 3.90mm Width)
Mounting Type: Surface Mount
Operating Temperature: -40°C ~ 150°C (TJ)
Technology: Magnetic Coupling
Supplier Device Package: PG-DSO-8-51
Rise / Fall Time (Typ): 10ns, 9ns
Number of Channels: 1
Voltage - Output Supply: 13V ~ 35V
на замовлення 5000 шт:
термін постачання 21-31 дні (днів)
Кількість Ціна
2500+72.63 грн
5000+68.43 грн
Мінімальне замовлення: 2500
В кошику  од. на суму  грн.
1EDI60N12AFXUMA1 Infineon-1EDI60N12AF-DS-v02_00-EN.pdf?fileId=db3a3043427ac3e201428e5da08f372a
1EDI60N12AFXUMA1
Виробник: Infineon Technologies
Description: DIGITAL ISO 1CH GATE DVR DSO8-51
Packaging: Tape & Reel (TR)
Package / Case: 8-SOIC (0.154", 3.90mm Width)
Mounting Type: Surface Mount
Operating Temperature: -40°C ~ 150°C (TJ)
Technology: Magnetic Coupling
Supplier Device Package: PG-DSO-8-51
Rise / Fall Time (Typ): 10ns, 9ns
Part Status: Active
Number of Channels: 1
Voltage - Output Supply: 10V ~ 35V
на замовлення 2500 шт:
термін постачання 21-31 дні (днів)
Кількість Ціна
2500+67.49 грн
Мінімальне замовлення: 2500
В кошику  од. на суму  грн.
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