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BCV29H6327XTSA1 BCV29H6327XTSA1 Infineon Technologies BCV29_49.pdf Description: TRANS NPN DARL 30V 0.5A SOT89
Packaging: Tape & Reel (TR)
Package / Case: TO-243AA
Mounting Type: Surface Mount
Transistor Type: NPN - Darlington
Operating Temperature: 150°C (TJ)
Vce Saturation (Max) @ Ib, Ic: 1V @ 100µA, 100mA
Current - Collector Cutoff (Max): 100nA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce: 20000 @ 100mA, 5V
Frequency - Transition: 150MHz
Supplier Device Package: PG-SOT89
Grade: Automotive
Current - Collector (Ic) (Max): 500 mA
Voltage - Collector Emitter Breakdown (Max): 30 V
Power - Max: 1 W
Qualification: AEC-Q101
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BCX51H6327XTSA1 BCX51H6327XTSA1 Infineon Technologies infineon-bcx51-bcx52-bcx53-ds-en.pdf Description: TRANS PNP 45V 1A PG-SOT89
Packaging: Tape & Reel (TR)
Package / Case: TO-243AA
Mounting Type: Surface Mount
Transistor Type: PNP
Operating Temperature: 150°C (TJ)
Vce Saturation (Max) @ Ib, Ic: 500mV @ 50mA, 500mA
Current - Collector Cutoff (Max): 100nA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce: 40 @ 150mA, 2V
Frequency - Transition: 125MHz
Supplier Device Package: PG-SOT89
Part Status: Not For New Designs
Current - Collector (Ic) (Max): 1 A
Voltage - Collector Emitter Breakdown (Max): 45 V
Power - Max: 2 W
Grade: Automotive
Qualification: AEC-Q101
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BCX5216H6327XTSA1 BCX5216H6327XTSA1 Infineon Technologies infineon-bcx51-bcx52-bcx53-ds-en.pdf Description: TRANS PNP 60V 1A PG-SOT89
Packaging: Tape & Reel (TR)
Package / Case: TO-243AA
Mounting Type: Surface Mount
Transistor Type: PNP
Operating Temperature: 150°C (TJ)
Vce Saturation (Max) @ Ib, Ic: 500mV @ 50mA, 500mA
Current - Collector Cutoff (Max): 100nA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce: 100 @ 150mA, 2V
Frequency - Transition: 125MHz
Supplier Device Package: PG-SOT89
Part Status: Last Time Buy
Current - Collector (Ic) (Max): 1 A
Voltage - Collector Emitter Breakdown (Max): 60 V
Power - Max: 2 W
Grade: Automotive
Qualification: AEC-Q101
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BCX52H6327XTSA1 BCX52H6327XTSA1 Infineon Technologies infineon-bcx51-bcx52-bcx53-ds-en.pdf Description: TRANS PNP 60V 1A PG-SOT89
Packaging: Tape & Reel (TR)
Package / Case: TO-243AA
Mounting Type: Surface Mount
Transistor Type: PNP
Operating Temperature: 150°C (TJ)
Vce Saturation (Max) @ Ib, Ic: 500mV @ 50mA, 500mA
Current - Collector Cutoff (Max): 100nA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce: 40 @ 150mA, 2V
Frequency - Transition: 125MHz
Supplier Device Package: PG-SOT89
Part Status: Last Time Buy
Current - Collector (Ic) (Max): 1 A
Voltage - Collector Emitter Breakdown (Max): 60 V
Power - Max: 2 W
Grade: Automotive
Qualification: AEC-Q101
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BCX5310H6327XTSA1 BCX5310H6327XTSA1 Infineon Technologies infineon-bcx51-bcx52-bcx53-ds-en.pdf Description: TRANS PNP 80V 1A PG-SOT89
Packaging: Tape & Reel (TR)
Package / Case: TO-243AA
Mounting Type: Surface Mount
Transistor Type: PNP
Operating Temperature: 150°C (TJ)
Vce Saturation (Max) @ Ib, Ic: 500mV @ 50mA, 500mA
Current - Collector Cutoff (Max): 100nA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce: 63 @ 150mA, 2V
Frequency - Transition: 125MHz
Supplier Device Package: PG-SOT89
Part Status: Last Time Buy
Current - Collector (Ic) (Max): 1 A
Voltage - Collector Emitter Breakdown (Max): 80 V
Power - Max: 2 W
Grade: Automotive
Qualification: AEC-Q101
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BCX53H6327XTSA1 BCX53H6327XTSA1 Infineon Technologies infineon-bcx51-bcx52-bcx53-ds-en.pdf Description: TRANS PNP 80V 1A PG-SOT89
Packaging: Tape & Reel (TR)
Package / Case: TO-243AA
Mounting Type: Surface Mount
Transistor Type: PNP
Operating Temperature: 150°C (TJ)
Vce Saturation (Max) @ Ib, Ic: 500mV @ 50mA, 500mA
Current - Collector Cutoff (Max): 100nA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce: 40 @ 150mA, 2V
Frequency - Transition: 125MHz
Supplier Device Package: PG-SOT89
Part Status: Last Time Buy
Current - Collector (Ic) (Max): 1 A
Voltage - Collector Emitter Breakdown (Max): 80 V
Power - Max: 2 W
Grade: Automotive
Qualification: AEC-Q101
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BCX5516H6327XTSA1 BCX5516H6327XTSA1 Infineon Technologies bcx54_bcx55_bcx56.pdf?folderId=db3a304314dca38901155ffc06d51dc7&fileId=db3a3043156fd573011589d20fda0368 Description: TRANS NPN 60V 1A PG-SOT89
Packaging: Tape & Reel (TR)
Package / Case: TO-243AA
Mounting Type: Surface Mount
Transistor Type: NPN
Operating Temperature: 150°C (TJ)
Vce Saturation (Max) @ Ib, Ic: 500mV @ 50mA, 500mA
Current - Collector Cutoff (Max): 100nA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce: 100 @ 150mA, 2V
Frequency - Transition: 100MHz
Supplier Device Package: PG-SOT89
Part Status: Last Time Buy
Current - Collector (Ic) (Max): 1 A
Voltage - Collector Emitter Breakdown (Max): 60 V
Power - Max: 2 W
Grade: Automotive
Qualification: AEC-Q101
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BCX5516H6433XTMA1 BCX5516H6433XTMA1 Infineon Technologies bcx54_bcx55_bcx56.pdf?folderId=db3a304314dca38901155ffc06d51dc7&fileId=db3a3043156fd573011589d20fda0368 Description: TRANS NPN 60V 1A PG-SOT89
Packaging: Tape & Reel (TR)
Package / Case: TO-243AA
Mounting Type: Surface Mount
Transistor Type: NPN
Operating Temperature: 150°C (TJ)
Vce Saturation (Max) @ Ib, Ic: 500mV @ 50mA, 500mA
Current - Collector Cutoff (Max): 100nA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce: 100 @ 150mA, 2V
Frequency - Transition: 100MHz
Supplier Device Package: PG-SOT89
Part Status: Last Time Buy
Current - Collector (Ic) (Max): 1 A
Voltage - Collector Emitter Breakdown (Max): 60 V
Power - Max: 2 W
Grade: Automotive
Qualification: AEC-Q101
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BCX5616H6433XTMA1 BCX5616H6433XTMA1 Infineon Technologies bcx54_bcx55_bcx56.pdf?folderId=db3a304314dca38901155ffc06d51dc7&fileId=db3a3043156fd573011589d20fda0368 Description: TRANS NPN 80V 1A PG-SOT89
Packaging: Tape & Reel (TR)
Package / Case: TO-243AA
Mounting Type: Surface Mount
Transistor Type: NPN
Operating Temperature: 150°C (TJ)
Vce Saturation (Max) @ Ib, Ic: 500mV @ 50mA, 500mA
Current - Collector Cutoff (Max): 100nA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce: 100 @ 150mA, 2V
Frequency - Transition: 100MHz
Supplier Device Package: PG-SOT89
Part Status: Last Time Buy
Current - Collector (Ic) (Max): 1 A
Voltage - Collector Emitter Breakdown (Max): 80 V
Power - Max: 2 W
Grade: Automotive
Qualification: AEC-Q101
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BCX56H6327XTSA1 BCX56H6327XTSA1 Infineon Technologies bcx54_bcx55_bcx56.pdf?folderId=db3a304314dca38901155ffc06d51dc7&fileId=db3a3043156fd573011589d20fda0368 Description: TRANS NPN 80V 1A PG-SOT89
Packaging: Tape & Reel (TR)
Package / Case: TO-243AA
Mounting Type: Surface Mount
Transistor Type: NPN
Operating Temperature: 150°C (TJ)
Vce Saturation (Max) @ Ib, Ic: 500mV @ 50mA, 500mA
Current - Collector Cutoff (Max): 100nA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce: 40 @ 150mA, 2V
Frequency - Transition: 100MHz
Supplier Device Package: PG-SOT89
Part Status: Last Time Buy
Current - Collector (Ic) (Max): 1 A
Voltage - Collector Emitter Breakdown (Max): 80 V
Power - Max: 2 W
Grade: Automotive
Qualification: AEC-Q101
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BCX6816H6327XTSA1 BCX6816H6327XTSA1 Infineon Technologies bcx68.pdf?folderId=db3a304314dca38901155ffc06d51dc7&fileId=db3a3043156fd573011589ef403903e7 Description: TRANS NPN 20V 1A PG-SOT89
Packaging: Tape & Reel (TR)
Package / Case: TO-243AA
Mounting Type: Surface Mount
Transistor Type: NPN
Operating Temperature: 150°C (TJ)
Vce Saturation (Max) @ Ib, Ic: 500mV @ 100mA, 1A
Current - Collector Cutoff (Max): 100nA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce: 100 @ 500mA, 1V
Frequency - Transition: 100MHz
Supplier Device Package: PG-SOT89
Part Status: Last Time Buy
Current - Collector (Ic) (Max): 1 A
Voltage - Collector Emitter Breakdown (Max): 20 V
Power - Max: 3 W
Grade: Automotive
Qualification: AEC-Q101
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BCX6910H6327XTSA1 BCX6910H6327XTSA1 Infineon Technologies bcx69.pdf?folderId=db3a304314dca38901155ffc06d51dc7&fileId=db3a3043156fd573011589f3f56603ee&location=.en.product.findProductTypeByName.html_dgdl_bcx69.pdf Description: TRANS PNP 20V 1A PG-SOT89
Packaging: Tape & Reel (TR)
Package / Case: TO-243AA
Mounting Type: Surface Mount
Transistor Type: PNP
Operating Temperature: 150°C (TJ)
Vce Saturation (Max) @ Ib, Ic: 500mV @ 100mA, 1A
Current - Collector Cutoff (Max): 100nA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce: 85 @ 500mA, 1V
Frequency - Transition: 100MHz
Supplier Device Package: PG-SOT89
Grade: Automotive
Current - Collector (Ic) (Max): 1 A
Voltage - Collector Emitter Breakdown (Max): 20 V
Power - Max: 3 W
Qualification: AEC-Q101
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BCX6916H6327XTSA1 BCX6916H6327XTSA1 Infineon Technologies bcx69.pdf?folderId=db3a304314dca38901155ffc06d51dc7&fileId=db3a3043156fd573011589f3f56603ee&location=.en.product.findProductTypeByName.html_dgdl_bcx69.pdf Description: TRANS PNP 20V 1A PG-SOT89
Packaging: Tape & Reel (TR)
Package / Case: TO-243AA
Mounting Type: Surface Mount
Transistor Type: PNP
Operating Temperature: 150°C (TJ)
Vce Saturation (Max) @ Ib, Ic: 500mV @ 100mA, 1A
Current - Collector Cutoff (Max): 100nA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce: 100 @ 500mA, 1V
Frequency - Transition: 100MHz
Supplier Device Package: PG-SOT89
Part Status: Last Time Buy
Current - Collector (Ic) (Max): 1 A
Voltage - Collector Emitter Breakdown (Max): 20 V
Power - Max: 3 W
Grade: Automotive
Qualification: AEC-Q101
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BCX6925H6327XTSA1 BCX6925H6327XTSA1 Infineon Technologies bcx69.pdf?folderId=db3a304314dca38901155ffc06d51dc7&fileId=db3a3043156fd573011589f3f56603ee&location=.en.product.findProductTypeByName.html_dgdl_bcx69.pdf Description: TRANS PNP 20V 1A PG-SOT89
Packaging: Tape & Reel (TR)
Package / Case: TO-243AA
Mounting Type: Surface Mount
Transistor Type: PNP
Operating Temperature: 150°C (TJ)
Vce Saturation (Max) @ Ib, Ic: 500mV @ 100mA, 1A
Current - Collector Cutoff (Max): 100nA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce: 160 @ 500mA, 1V
Frequency - Transition: 100MHz
Supplier Device Package: PG-SOT89
Grade: Automotive
Current - Collector (Ic) (Max): 1 A
Voltage - Collector Emitter Breakdown (Max): 20 V
Power - Max: 3 W
Qualification: AEC-Q101
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BFN18H6327XTSA1 BFN18H6327XTSA1 Infineon Technologies bfn18.pdf?folderId=db3a30431441fb5d011449af3ad90232&fileId=db3a30431441fb5d011449b188060234 Description: TRANSISTOR AF SOT89-4
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BFN19H6327XTSA1 BFN19H6327XTSA1 Infineon Technologies bfn19.pdf?folderId=db3a30431441fb5d011449af3ad90232&fileId=db3a30431441fb5d011449c1d62e0238 Description: TRANS PNP 300V 0.2A SOT89
Packaging: Tape & Reel (TR)
Package / Case: TO-243AA
Mounting Type: Surface Mount
Transistor Type: PNP
Operating Temperature: 150°C (TJ)
Vce Saturation (Max) @ Ib, Ic: 500mV @ 2mA, 20mA
Current - Collector Cutoff (Max): 100nA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce: 30 @ 30mA, 10V
Frequency - Transition: 100MHz
Supplier Device Package: PG-SOT89
Grade: Automotive
Current - Collector (Ic) (Max): 200 mA
Voltage - Collector Emitter Breakdown (Max): 300 V
Power - Max: 1 W
Qualification: AEC-Q101
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FF150R17KE4HOSA1 Infineon Technologies Infineon-FF150R17KE4-DS-v02_02-en_de.pdf?fileId=db3a3043294a3558012959da50bd7c47 Description: MODULE IGBT 1700V AG-62MM-1
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BSM100GB170DN2HOSA1 Infineon Technologies BSM_100_GB_170_DN2.pdf Description: IGBT MOD 1700V 145A 1000W
Packaging: Tray
Package / Case: Module
Mounting Type: Chassis Mount
Input: Standard
Configuration: Half Bridge
Operating Temperature: 150°C (TJ)
Vce(on) (Max) @ Vge, Ic: 3.9V @ 15V, 100A
NTC Thermistor: No
Supplier Device Package: Module
Current - Collector (Ic) (Max): 145 A
Voltage - Collector Emitter Breakdown (Max): 1700 V
Power - Max: 1000 W
Current - Collector Cutoff (Max): 1 mA
Input Capacitance (Cies) @ Vce: 16 nF @ 25 V
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BSM150GB170DN2HOSA1 Infineon Technologies BSM_150_GB_170_DN2.pdf Description: IGBT MOD 1700V 220A 1250W MOD
Packaging: Tray
Package / Case: Module
Mounting Type: Chassis Mount
Input: Standard
Configuration: Half Bridge
Operating Temperature: 150°C (TJ)
Vce(on) (Max) @ Vge, Ic: 3.9V @ 15V, 150A
NTC Thermistor: No
Supplier Device Package: Module
Part Status: Obsolete
Current - Collector (Ic) (Max): 220 A
Voltage - Collector Emitter Breakdown (Max): 1700 V
Power - Max: 1250 W
Current - Collector Cutoff (Max): 1.5 mA
Input Capacitance (Cies) @ Vce: 20 nF @ 25 V
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BSM300GA170DN2HOSA1 Infineon Technologies BSM_300_GA_170_DN2.pdf Description: IGBT MOD 1700V 440A 2500W
Packaging: Tray
Package / Case: Module
Mounting Type: Chassis Mount
Input: Standard
Configuration: Single
Operating Temperature: 150°C (TJ)
Vce(on) (Max) @ Vge, Ic: 3.9V @ 15V, 300A
NTC Thermistor: No
Supplier Device Package: Module
Current - Collector (Ic) (Max): 440 A
Voltage - Collector Emitter Breakdown (Max): 1700 V
Power - Max: 2500 W
Current - Collector Cutoff (Max): 3 mA
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TLV493DA1B6HTSA2 TLV493DA1B6HTSA2 Infineon Technologies TLV493D-A1B6_Rev1.1_4-9-19.pdf Description: SENSOR ROTARY 360DEG SMD
Packaging: Tape & Reel (TR)
Package / Case: SOT-23-6 Thin, TSOT-23-6
Mounting Type: Surface Mount
Output: I2C
Operating Temperature: -40°C ~ 125°C
Termination Style: SMD (SMT) Tab
Voltage - Supply: 2.7V ~ 3.5V
Actuator Type: External Magnet, Not Included
Technology: Hall Effect
For Measuring: Linear, Rotary Position
Supplier Device Package: PG-TSOP-6-6-5
Rotation Angle - Electrical, Mechanical: 0° ~ 360°, Continuous
Part Status: Active
Grade: Automotive
Qualification: AEC-Q100
на замовлення 12000 шт:
термін постачання 21-31 дні (днів)
3000+34.55 грн
6000+32.12 грн
9000+31.50 грн
Мінімальне замовлення: 3000
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TLV493DA1B62GOKITTOBO1 TLV493DA1B62GOKITTOBO1 Infineon Technologies TLV493D-A1B6_Rev1.1_4-9-19.pdf Description: 3D MAGNETICS SENSOR 2GO KIT-TL
Packaging: Bulk
Interface: I2C
Voltage - Supply: 2.7V ~ 3.5V
Sensor Type: Magnetic, Linear, Rotary Position
Utilized IC / Part: TLV493D-A1B6
Supplied Contents: Board(s)
Part Status: Obsolete
Contents: Board(s)
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TLV493DA1B6HTSA2 TLV493DA1B6HTSA2 Infineon Technologies TLV493D-A1B6_Rev1.1_4-9-19.pdf Description: SENSOR ROTARY 360DEG SMD
Packaging: Cut Tape (CT)
Package / Case: SOT-23-6 Thin, TSOT-23-6
Mounting Type: Surface Mount
Output: I2C
Operating Temperature: -40°C ~ 125°C
Termination Style: SMD (SMT) Tab
Voltage - Supply: 2.7V ~ 3.5V
Actuator Type: External Magnet, Not Included
Technology: Hall Effect
For Measuring: Linear, Rotary Position
Supplier Device Package: PG-TSOP-6-6-5
Rotation Angle - Electrical, Mechanical: 0° ~ 360°, Continuous
Part Status: Active
Grade: Automotive
Qualification: AEC-Q100
на замовлення 12248 шт:
термін постачання 21-31 дні (днів)
6+59.61 грн
7+50.35 грн
10+47.73 грн
25+41.90 грн
50+39.93 грн
100+38.11 грн
500+33.92 грн
1000+32.59 грн
Мінімальне замовлення: 6
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BFP780H6327XTSA1 BFP780H6327XTSA1 Infineon Technologies Infineon-BFP780-DS-v04_00-EN.pdf?fileId=5546d46265f064ff01663896b2fe4eb3 Description: RF TRANS NPN 6.1V 900MHZ SOT343
Packaging: Cut Tape (CT)
Package / Case: SC-82A, SOT-343
Mounting Type: Surface Mount
Transistor Type: NPN
Operating Temperature: 150°C (TJ)
Gain: 27dB
Power - Max: 600mW
Current - Collector (Ic) (Max): 120mA
Voltage - Collector Emitter Breakdown (Max): 6.1V
DC Current Gain (hFE) (Min) @ Ic, Vce: 85 @ 90mA, 5V
Frequency - Transition: 900MHz
Noise Figure (dB Typ @ f): 1.2dB ~ 2.4dB @ 900MHz ~ 3.5GHz
Supplier Device Package: PG-SOT343-4-1
Part Status: Obsolete
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BSC009NE2LS5ATMA1 BSC009NE2LS5ATMA1 Infineon Technologies Infineon-BSC009NE2LS5-DS-v02_00-EN.pdf?fileId=5546d4624bcaebcf014c096c7c152310 Description: MOSFET N-CH 25V 41A/223A TDSON
Packaging: Tape & Reel (TR)
Package / Case: 8-PowerTDFN
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 41A (Ta), 223A (Tc)
Rds On (Max) @ Id, Vgs: 0.9mOhm @ 30A, 10V
Power Dissipation (Max): 2.5W (Ta), 74W (Tc)
Vgs(th) (Max) @ Id: 2V @ 250µA
Supplier Device Package: PG-TDSON-8-7
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±16V
Drain to Source Voltage (Vdss): 25 V
Gate Charge (Qg) (Max) @ Vgs: 57 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 3900 pF @ 12 V
на замовлення 10000 шт:
термін постачання 21-31 дні (днів)
5000+49.79 грн
Мінімальне замовлення: 5000
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BSC009NE2LS5IATMA1 BSC009NE2LS5IATMA1 Infineon Technologies Infineon-BSC009NE2LS5I-DS-v02_00-EN.pdf?fileId=5546d4624bcaebcf014c09a38586234e Description: MOSFET N-CH 25V 40A/217A TDSON
Packaging: Tape & Reel (TR)
Package / Case: 8-PowerTDFN
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 40A (Ta), 217A (Tc)
Rds On (Max) @ Id, Vgs: 0.95mOhm @ 30A, 10V
Power Dissipation (Max): 2.5W (Ta), 74W (Tc)
Vgs(th) (Max) @ Id: 2V @ 250µA
Supplier Device Package: PG-TDSON-8-7
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±16V
Drain to Source Voltage (Vdss): 25 V
Gate Charge (Qg) (Max) @ Vgs: 49 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 3200 pF @ 12 V
на замовлення 5000 шт:
термін постачання 21-31 дні (днів)
5000+57.04 грн
Мінімальне замовлення: 5000
В кошику  од. на суму  грн.
IRF8252TRPBF-1 IRF8252TRPBF-1 Infineon Technologies irf8252pbf-1.pdf?fileId=5546d462533600a40153560d053a1d56 Description: MOSFET N-CH 25V 25A 8SO
Packaging: Tape & Reel (TR)
Package / Case: 8-SOIC (0.154", 3.90mm Width)
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 25A (Ta)
Rds On (Max) @ Id, Vgs: 2.7mOhm @ 25A, 10V
Power Dissipation (Max): 2.5W (Ta)
Vgs(th) (Max) @ Id: 2.35V @ 100µA
Supplier Device Package: PG-DSO-8
Part Status: Obsolete
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 25 V
Gate Charge (Qg) (Max) @ Vgs: 53 nC @ 4.5 V
Input Capacitance (Ciss) (Max) @ Vds: 5305 pF @ 13 V
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IRFH7187TRPBF Infineon Technologies irfh7187pbf.pdf Description: MOSFET N-CH 100V 18A/105A 8PQFN
Packaging: Tape & Reel (TR)
Package / Case: 8-PowerVDFN
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 18A (Ta), 105A (Tc)
Rds On (Max) @ Id, Vgs: 6mOhm @ 50A, 10V
Power Dissipation (Max): 3.8W (Ta), 132W (Tc)
Vgs(th) (Max) @ Id: 3.6V @ 150µA
Supplier Device Package: 8-PQFN (5x6)
Part Status: Obsolete
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 100 V
Gate Charge (Qg) (Max) @ Vgs: 50 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 2116 pF @ 50 V
товару немає в наявності
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62-0209PBF Infineon Technologies Description: DIODE SHOCTTKY
товару немає в наявності
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62-0216PBF Infineon Technologies Description: DIODE SHOCTTKY
товару немає в наявності
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62-0239PBF Infineon Technologies Description: DIODE SHOCTTKY
товару немає в наявності
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62-0245PBF Infineon Technologies Description: DIODE SHOCTTKY
товару немає в наявності
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62-0253PBF Infineon Technologies Description: DIODE SHOCTTKY
товару немає в наявності
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62-0254PBF Infineon Technologies Part_Number_Guide_Web.pdf Description: DIODE SHOCTTKY
товару немає в наявності
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BSC265N10LSFGATMA1 BSC265N10LSFGATMA1 Infineon Technologies BSC265N10LSF+G_+Rev2.06.pdf?folderId=db3a304313b8b5a60113cee8763b02d7&fileId=db3a30431b3e89eb011b49a375207b46 Description: MOSFET N-CH 100V 6.5A/40A TDSON
Packaging: Cut Tape (CT)
Package / Case: 8-PowerTDFN
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 6.5A (Ta), 40A (Tc)
Rds On (Max) @ Id, Vgs: 26.5mOhm @ 20A, 10V
Power Dissipation (Max): 78W (Tc)
Vgs(th) (Max) @ Id: 2.4V @ 43µA
Supplier Device Package: PG-TDSON-8-1
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 100 V
Gate Charge (Qg) (Max) @ Vgs: 21 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 1600 pF @ 50 V
на замовлення 13438 шт:
термін постачання 21-31 дні (днів)
4+109.00 грн
10+66.18 грн
100+44.00 грн
500+32.36 грн
1000+29.48 грн
2000+28.16 грн
Мінімальне замовлення: 4
В кошику  од. на суму  грн.
IPD048N06L3GBTMA1 IPD048N06L3GBTMA1 Infineon Technologies IPD048N06L3_Rev2.0.pdf?folderId=db3a30431441fb5d01148ca9f1be0e77&fileId=db3a30431ddc9372011e2b4f496e4db0 Description: MOSFET N-CH 60V 90A TO252-3
Packaging: Cut Tape (CT)
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 90A (Tc)
Rds On (Max) @ Id, Vgs: 4.8mOhm @ 90A, 10V
Power Dissipation (Max): 115W (Tc)
Vgs(th) (Max) @ Id: 2.2V @ 58µA
Supplier Device Package: PG-TO252-3
Part Status: Obsolete
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 60 V
Gate Charge (Qg) (Max) @ Vgs: 50 nC @ 4.5 V
Input Capacitance (Ciss) (Max) @ Vds: 8400 pF @ 30 V
товару немає в наявності
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1EBN1001AEXUMA1 1EBN1001AEXUMA1 Infineon Technologies Infineon-1EBN1001AE-DS-v03_00-EN.pdf?fileId=5546d462503812bb01505fa4d89805a0 Description: IC GATE DRVR HI/LOW SIDE 14SOIC
Packaging: Tape & Reel (TR)
Package / Case: 14-SOIC (0.154", 3.90mm Width) Exposed Pad
Mounting Type: Surface Mount
Operating Temperature: -40°C ~ 150°C (TJ)
Voltage - Supply: 13V ~ 18V
High Side Voltage - Max (Bootstrap): 1200 V
Supplier Device Package: PG-DSO-14-43
Rise / Fall Time (Typ): 50ns, 90ns
Channel Type: Single
Driven Configuration: High-Side or Low-Side
Number of Drivers: 1
Gate Type: IGBT, MOSFET (N-Channel, P-Channel)
Logic Voltage - VIL, VIH: 1.5V, 3.5V
Part Status: Active
DigiKey Programmable: Not Verified
Grade: Automotive
Qualification: AEC-Q100
товару немає в наявності
В кошику  од. на суму  грн.
1ED020I12B2XUMA1 1ED020I12B2XUMA1 Infineon Technologies Infineon-1ED020I12-B2-DataSheet-v02_02-EN.pdf?fileId=db3a304333227b5e013344bf16f84ca6 Description: DGT ISO 4.5KV 1CH GT DVR DSO16
Packaging: Tape & Reel (TR)
Package / Case: 16-SOIC (0.295", 7.50mm Width)
Mounting Type: Surface Mount
Operating Temperature: -40°C ~ 150°C (TJ)
Technology: Magnetic Coupling
Current - Output High, Low: 2A, 2A
Voltage - Isolation: 4500Vrms
Supplier Device Package: PG-DSO-16-15
Rise / Fall Time (Typ): 30ns, 50ns
Part Status: Active
Number of Channels: 1
Voltage - Output Supply: 13V ~ 20V
на замовлення 4000 шт:
термін постачання 21-31 дні (днів)
1000+201.08 грн
2000+189.28 грн
3000+187.10 грн
Мінімальне замовлення: 1000
В кошику  од. на суму  грн.
1ED020I12FA2XUMA2 1ED020I12FA2XUMA2 Infineon Technologies Infineon-1ED020I12FA2-DS-v02_00-en.pdf?fileId=db3a304333227b5e013344d078be4cdf Description: DGTL ISO 4.5KV 1CH GT DVR DSO20
Packaging: Tape & Reel (TR)
Package / Case: 20-SOIC (0.295", 7.50mm Width)
Mounting Type: Surface Mount
Operating Temperature: -40°C ~ 150°C (TJ)
Technology: Magnetic Coupling
Current - Output High, Low: 2A, 2A
Voltage - Isolation: 4500Vrms
Supplier Device Package: PG-DSO-20
Rise / Fall Time (Typ): 30ns, 50ns
Part Status: Not For New Designs
Number of Channels: 1
Voltage - Output Supply: 13V ~ 20V
Grade: Automotive
Qualification: AEC-Q100
на замовлення 3000 шт:
термін постачання 21-31 дні (днів)
1000+290.84 грн
Мінімальне замовлення: 1000
В кошику  од. на суму  грн.
1ED020I12FTAXUMA2 1ED020I12FTAXUMA2 Infineon Technologies Infineon-1ED020I12FTA-DS-v03_00-EN.pdf?fileId=db3a30432e779412012e7b85bdb73874 Description: DGT ISO 4.5KV 1CH GT DVR DSO20
Packaging: Tape & Reel (TR)
Package / Case: 20-SOIC (0.295", 7.50mm Width)
Mounting Type: Surface Mount
Operating Temperature: -40°C ~ 150°C (TJ)
Technology: Magnetic Coupling
Current - Output High, Low: 2A, 2A
Voltage - Isolation: 4500Vrms
Supplier Device Package: PG-DSO-20-55
Rise / Fall Time (Typ): 30ns, 20ns
Part Status: Not For New Designs
Number of Channels: 1
Voltage - Output Supply: 4.5V ~ 5.5V
на замовлення 1000 шт:
термін постачання 21-31 дні (днів)
1000+291.31 грн
Мінімальне замовлення: 1000
В кошику  од. на суму  грн.
1EDI05I12AFXUMA1 1EDI05I12AFXUMA1 Infineon Technologies Infineon--DS-v02_00-EN.pdf?fileId=db3a3043427ac3e201428e648a333734 Description: DIGITAL ISO 1CH GATE DVR DSO8-51
Packaging: Tape & Reel (TR)
Package / Case: 8-SOIC (0.154", 3.90mm Width)
Mounting Type: Surface Mount
Operating Temperature: -40°C ~ 150°C (TJ)
Technology: Magnetic Coupling
Supplier Device Package: PG-DSO-8-51
Rise / Fall Time (Typ): 10ns, 9ns
Number of Channels: 1
Voltage - Output Supply: 13V ~ 35V
на замовлення 10000 шт:
термін постачання 21-31 дні (днів)
2500+59.81 грн
5000+55.46 грн
Мінімальне замовлення: 2500
В кошику  од. на суму  грн.
1EDI2001ASXUMA2 1EDI2001ASXUMA2 Infineon Technologies 1EDI2001AS.pdf Description: DGT ISO 3.75KV 1CH GT DVR DSO36
Packaging: Tape & Reel (TR)
Package / Case: 36-BSSOP (0.295", 7.50mm Width)
Mounting Type: Surface Mount
Operating Temperature: -40°C ~ 150°C (TJ)
Technology: Magnetic Coupling
Current - Output High, Low: 1A, 1A
Voltage - Isolation: 3750Vrms
Supplier Device Package: PG-DSO-36-63
Rise / Fall Time (Typ): 30ns, 60ns
Number of Channels: 1
Voltage - Output Supply: 13V ~ 18V
товару немає в наявності
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1EDI20I12MFXUMA1 1EDI20I12MFXUMA1 Infineon Technologies 1EDI10I12MFXUMA1.pdf Description: DIGITAL ISO 1CH GATE DVR DSO8-51
Packaging: Tape & Reel (TR)
Package / Case: 8-SOIC (0.154", 3.90mm Width)
Mounting Type: Surface Mount
Operating Temperature: -40°C ~ 150°C (TJ)
Technology: Magnetic Coupling
Supplier Device Package: PG-DSO-8-51
Rise / Fall Time (Typ): 9ns, 6ns
Number of Channels: 1
Voltage - Output Supply: 13V ~ 18V
на замовлення 2500 шт:
термін постачання 21-31 дні (днів)
2500+57.30 грн
Мінімальне замовлення: 2500
В кошику  од. на суму  грн.
1EDI20N12AFXUMA1 1EDI20N12AFXUMA1 Infineon Technologies 1EDIxxy12AF.pdf Description: DIGITAL ISO 1CH GATE DVR DSO8-51
Packaging: Tape & Reel (TR)
Package / Case: 8-SOIC (0.154", 3.90mm Width)
Mounting Type: Surface Mount
Operating Temperature: -40°C ~ 150°C (TJ)
Technology: Magnetic Coupling
Supplier Device Package: PG-DSO-8-51
Rise / Fall Time (Typ): 10ns, 9ns
Number of Channels: 1
Voltage - Output Supply: 10V ~ 35V
на замовлення 7500 шт:
термін постачання 21-31 дні (днів)
2500+57.30 грн
5000+53.94 грн
7500+53.32 грн
Мінімальне замовлення: 2500
В кошику  од. на суму  грн.
1EDI30I12MFXUMA1 1EDI30I12MFXUMA1 Infineon Technologies Infineon-1EDIXXI12MF-DS-v02_00-EN.pdf?fileId=5546d46145f1f3a401462944e0190fd7 Description: DIGITAL ISO 1CH GATE DVR DSO8-51
Packaging: Tape & Reel (TR)
Package / Case: 8-SOIC (0.154", 3.90mm Width)
Mounting Type: Surface Mount
Operating Temperature: -40°C ~ 150°C (TJ)
Technology: Magnetic Coupling
Supplier Device Package: PG-DSO-8-51
Rise / Fall Time (Typ): 9ns, 6ns
Part Status: Active
Number of Channels: 1
Voltage - Output Supply: 13V ~ 18V
товару немає в наявності
В кошику  од. на суму  грн.
1EDI40I12AFXUMA1 1EDI40I12AFXUMA1 Infineon Technologies Infineon--DS-v02_00-EN.pdf?fileId=db3a3043427ac3e201428e648a333734 Description: DIGITAL ISO 1CH GATE DVR DSO8-51
Packaging: Tape & Reel (TR)
Package / Case: 8-SOIC (0.154", 3.90mm Width)
Mounting Type: Surface Mount
Operating Temperature: -40°C ~ 150°C (TJ)
Technology: Magnetic Coupling
Supplier Device Package: PG-DSO-8-51
Rise / Fall Time (Typ): 10ns, 9ns
Number of Channels: 1
Voltage - Output Supply: 13V ~ 35V
на замовлення 7500 шт:
термін постачання 21-31 дні (днів)
2500+66.07 грн
5000+61.27 грн
Мінімальне замовлення: 2500
В кошику  од. на суму  грн.
1EDI60I12AFXUMA1 1EDI60I12AFXUMA1 Infineon Technologies Infineon--DS-v02_00-EN.pdf?fileId=db3a3043427ac3e201428e648a333734 Description: DIGITAL ISO 1CH GATE DVR DSO8-51
Packaging: Tape & Reel (TR)
Package / Case: 8-SOIC (0.154", 3.90mm Width)
Mounting Type: Surface Mount
Operating Temperature: -40°C ~ 150°C (TJ)
Technology: Magnetic Coupling
Supplier Device Package: PG-DSO-8-51
Rise / Fall Time (Typ): 10ns, 9ns
Number of Channels: 1
Voltage - Output Supply: 13V ~ 35V
на замовлення 5000 шт:
термін постачання 21-31 дні (днів)
2500+74.52 грн
5000+70.21 грн
Мінімальне замовлення: 2500
В кошику  од. на суму  грн.
1EDI60N12AFXUMA1 1EDI60N12AFXUMA1 Infineon Technologies 1EDIxxy12AF.pdf Description: DIGITAL ISO 1CH GATE DVR DSO8-51
Packaging: Tape & Reel (TR)
Package / Case: 8-SOIC (0.154", 3.90mm Width)
Mounting Type: Surface Mount
Operating Temperature: -40°C ~ 150°C (TJ)
Technology: Magnetic Coupling
Supplier Device Package: PG-DSO-8-51
Rise / Fall Time (Typ): 10ns, 9ns
Part Status: Active
Number of Channels: 1
Voltage - Output Supply: 10V ~ 35V
на замовлення 2500 шт:
термін постачання 21-31 дні (днів)
2500+69.24 грн
Мінімальне замовлення: 2500
В кошику  од. на суму  грн.
2ED020I06FIXUMA1 2ED020I06FIXUMA1 Infineon Technologies Infineon-2ED020I06-FI-DS-v02_00-EN.pdf?fileId=5546d4624fb7fef2014fda7f8a9335d0 Description: IC GATE DRVR HALF-BRIDGE DSO18-2
Packaging: Tape & Reel (TR)
Package / Case: 18-SOIC (0.295", 7.50mm Width)
Mounting Type: Surface Mount
Operating Temperature: -40°C ~ 125°C (TJ)
Voltage - Supply: 14V ~ 18V
Input Type: Inverting
High Side Voltage - Max (Bootstrap): 650 V
Supplier Device Package: PG-DSO-18-2
Rise / Fall Time (Typ): 20ns, 20ns
Channel Type: Independent
Driven Configuration: Half-Bridge
Number of Drivers: 2
Gate Type: IGBT, MOSFET (N-Channel)
Logic Voltage - VIL, VIH: 0.8V, 2V
Current - Peak Output (Source, Sink): 1A, 2A
Part Status: Active
DigiKey Programmable: Not Verified
товару немає в наявності
В кошику  од. на суму  грн.
2ED020I12F2XUMA1 2ED020I12F2XUMA1 Infineon Technologies Infineon-2ED020I12_F2-DS-v02_00-en.pdf?fileId=db3a304333227b5e013344c70fc64cc8 Description: IC GATE DRVR HALF-BRIDG DSO36-58
Packaging: Tape & Reel (TR)
Package / Case: 36-BSSOP (0.295", 7.50mm Width), 32 Leads
Mounting Type: Surface Mount
Operating Temperature: -40°C ~ 150°C (TJ)
Voltage - Supply: 13V ~ 20V
Input Type: Inverting, Non-Inverting
High Side Voltage - Max (Bootstrap): 1200 V
Supplier Device Package: PG-DSO-36-58
Rise / Fall Time (Typ): 30ns, 50ns
Channel Type: Independent
Driven Configuration: Half-Bridge
Number of Drivers: 2
Gate Type: IGBT
Logic Voltage - VIL, VIH: 1.5V, 3.5V
Current - Peak Output (Source, Sink): 2A, 2A
Part Status: Active
DigiKey Programmable: Not Verified
на замовлення 2000 шт:
термін постачання 21-31 дні (днів)
1000+265.56 грн
2000+250.26 грн
Мінімальне замовлення: 1000
В кошику  од. на суму  грн.
2ED020I12FAXUMA2 2ED020I12FAXUMA2 Infineon Technologies Infineon-2ED020I12FA-DS-v02_02-en.pdf?fileId=db3a30432e779412012e7b87d2b23878 Description: IC GATE DRVR HALF-BRIDG DSO36-58
Packaging: Tape & Reel (TR)
Package / Case: 36-BSSOP (0.295", 7.50mm Width), 32 Leads
Mounting Type: Surface Mount
Operating Temperature: -40°C ~ 150°C (TJ)
Voltage - Supply: 13V ~ 20V
Input Type: Inverting, Non-Inverting
High Side Voltage - Max (Bootstrap): 1200 V
Supplier Device Package: PG-DSO-36-58
Rise / Fall Time (Typ): 30ns, 50ns
Channel Type: Independent
Driven Configuration: Half-Bridge
Number of Drivers: 2
Gate Type: IGBT, MOSFET (N-Channel, P-Channel)
Logic Voltage - VIL, VIH: 1.5V, 3.5V
Current - Peak Output (Source, Sink): 2.4A, 2.4A
Part Status: Not For New Designs
DigiKey Programmable: Not Verified
на замовлення 1000 шт:
термін постачання 21-31 дні (днів)
1000+558.44 грн
Мінімальне замовлення: 1000
В кошику  од. на суму  грн.
2EDN7524FXTMA1 2EDN7524FXTMA1 Infineon Technologies Infineon-2EDN752x-2EDN852x-DS--DS-v02_03-EN.pdf?fileId=5546d462525dbac40152abcc7dbb1727 Description: IC GATE DRVR LOW-SIDE 8SOIC
Packaging: Tape & Reel (TR)
Package / Case: 8-SOIC (0.154", 3.90mm Width)
Mounting Type: Surface Mount
Operating Temperature: -40°C ~ 150°C (TJ)
Voltage - Supply: 4.5V ~ 20V
Input Type: Non-Inverting
Supplier Device Package: PG-DSO-8-60
Rise / Fall Time (Typ): 5.3ns, 4.5ns
Channel Type: Independent
Driven Configuration: Low-Side
Number of Drivers: 2
Gate Type: MOSFET (N-Channel)
Current - Peak Output (Source, Sink): 5A, 5A
Part Status: Active
DigiKey Programmable: Not Verified
на замовлення 15000 шт:
термін постачання 21-31 дні (днів)
2500+26.71 грн
5000+25.06 грн
7500+24.73 грн
12500+22.87 грн
Мінімальне замовлення: 2500
В кошику  од. на суму  грн.
6ED003L06F2XUMA1 6ED003L06F2XUMA1 Infineon Technologies Infineon-6ED003L0x_F2-DS-v02_09-EN.pdf?fileId=db3a3043315daf4401316108306d4190 Description: IC GATE DRVR HALF-BRIDGE 28SOIC
Packaging: Tape & Reel (TR)
Package / Case: 28-SOIC (0.295", 7.50mm Width)
Mounting Type: Surface Mount
Operating Temperature: -40°C ~ 125°C (TJ)
Voltage - Supply: 13V ~ 17.5V
Input Type: Inverting
High Side Voltage - Max (Bootstrap): 620 V
Supplier Device Package: PG-DSO-28
Rise / Fall Time (Typ): 60ns, 26ns
Channel Type: 3-Phase
Driven Configuration: Half-Bridge
Number of Drivers: 6
Gate Type: IGBT, MOSFET (N-Channel, P-Channel)
Logic Voltage - VIL, VIH: 1.1V, 1.7V
Part Status: Not For New Designs
DigiKey Programmable: Not Verified
на замовлення 1000 шт:
термін постачання 21-31 дні (днів)
1000+165.52 грн
Мінімальне замовлення: 1000
В кошику  од. на суму  грн.
6EDL04I06PTXUMA1 6EDL04I06PTXUMA1 Infineon Technologies 6ED2-DB-Rev2_3.pdf?folderId=db3a30431a5c32f2011a77fa27a86cb5&fileId=db3a304336797ff901367c18c18445af Description: IC GATE DRVR HALF-BRIDGE DSO28
Packaging: Tape & Reel (TR)
Package / Case: 28-SOIC (0.295", 7.50mm Width)
Mounting Type: Surface Mount
Operating Temperature: -40°C ~ 125°C (TJ)
Voltage - Supply: 13V ~ 17.5V
Input Type: Non-Inverting
High Side Voltage - Max (Bootstrap): 600 V
Supplier Device Package: PG-DSO-28
Rise / Fall Time (Typ): 60ns, 26ns
Channel Type: 3-Phase
Driven Configuration: Half-Bridge
Number of Drivers: 6
Gate Type: IGBT, MOSFET (N-Channel, P-Channel)
Logic Voltage - VIL, VIH: 1.1V, 1.7V
DigiKey Programmable: Not Verified
на замовлення 1000 шт:
термін постачання 21-31 дні (днів)
1000+142.41 грн
Мінімальне замовлення: 1000
В кошику  од. на суму  грн.
6EDL04N06PTXUMA1 6EDL04N06PTXUMA1 Infineon Technologies 6ED2-DB-Rev2_3.pdf?folderId=db3a30431a5c32f2011a77fa27a86cb5&fileId=db3a304336797ff901367c18c18445af Description: IC GATE DRVR HALF-BRIDGE 28TSSOP
Packaging: Tape & Reel (TR)
Package / Case: 28-SOIC (0.295", 7.50mm Width)
Mounting Type: Surface Mount
Operating Temperature: -40°C ~ 125°C (TJ)
Voltage - Supply: 10V ~ 17.5V
Input Type: Non-Inverting
High Side Voltage - Max (Bootstrap): 620 V
Supplier Device Package: PG-DSO-28
Rise / Fall Time (Typ): 60ns, 26ns
Channel Type: 3-Phase
Driven Configuration: Half-Bridge
Number of Drivers: 6
Gate Type: IGBT, MOSFET (N-Channel, P-Channel)
Logic Voltage - VIL, VIH: 1.1V, 1.7V
Part Status: Active
DigiKey Programmable: Not Verified
на замовлення 1000 шт:
термін постачання 21-31 дні (днів)
1000+132.36 грн
Мінімальне замовлення: 1000
В кошику  од. на суму  грн.
BA89502VH6327XTSA1 Infineon Technologies Part_Number_Guide_Web.pdf Description: DIODE GEN PURP SC79-2
Packaging: Tape & Reel (TR)
Part Status: Obsolete
товару немає в наявності
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BAS7002VH6327XTSA1 BAS7002VH6327XTSA1 Infineon Technologies INFNS30154-1.pdf?t.download=true&u=5oefqw Description: DIODE SCHOTTKY 70V 70MA PGSC7921
Packaging: Tape & Reel (TR)
Package / Case: SC-79, SOD-523
Mounting Type: Surface Mount
Speed: Small Signal =< 200mA (Io), Any Speed
Reverse Recovery Time (trr): 100 ps
Technology: Schottky
Capacitance @ Vr, F: 2pF @ 0V, 1MHz
Current - Average Rectified (Io): 70mA
Supplier Device Package: PG-SC79-2-1
Operating Temperature - Junction: 150°C (Max)
Part Status: Active
Voltage - DC Reverse (Vr) (Max): 70 V
Voltage - Forward (Vf) (Max) @ If: 1 V @ 15 mA
Current - Reverse Leakage @ Vr: 100 nA @ 50 V
Grade: Automotive
Qualification: AEC-Q101
на замовлення 3000 шт:
термін постачання 21-31 дні (днів)
3000+3.34 грн
Мінімальне замовлення: 3000
В кошику  од. на суму  грн.
BAT1502ELE6327XTMA1 BAT1502ELE6327XTMA1 Infineon Technologies Infineon-BAT15-02EL-DS-v01_00-EN.pdf?fileId=5546d46265f064ff01663895df9e4e74 Description: DIODE SCHOTTKY 4V 100MW TSLP219
Packaging: Tape & Reel (TR)
Package / Case: 0402 (1006 Metric)
Diode Type: Schottky - Single
Operating Temperature: 150°C (TJ)
Capacitance @ Vr, F: 0.35pF @ 0V, 1MHz
Voltage - Peak Reverse (Max): 4V
Supplier Device Package: PG-TSLP-2-19
Part Status: Active
Current - Max: 110 mA
Power Dissipation (Max): 100 mW
на замовлення 15000 шт:
термін постачання 21-31 дні (днів)
15000+14.78 грн
Мінімальне замовлення: 15000
В кошику  од. на суму  грн.
BAT6402VH6327XTSA1 BAT6402VH6327XTSA1 Infineon Technologies Infineon-BAT64SERIES-DataSheet-v01_00-EN.pdf?fileId=5546d4626d66c2b1016d73f85ab420ed Description: DIODE SCHOTTK 40V 250MA PGSC7921
Packaging: Tape & Reel (TR)
Package / Case: SC-79, SOD-523
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 5 ns
Technology: Schottky
Capacitance @ Vr, F: 6pF @ 0V, 1MHz
Current - Average Rectified (Io): 250mA
Supplier Device Package: PG-SC79-2-1
Operating Temperature - Junction: 150°C (Max)
Part Status: Active
Voltage - DC Reverse (Vr) (Max): 40 V
Voltage - Forward (Vf) (Max) @ If: 750 mV @ 100 mA
Current - Reverse Leakage @ Vr: 2 µA @ 30 V
Grade: Automotive
Qualification: AEC-Q101
на замовлення 78000 шт:
термін постачання 21-31 дні (днів)
3000+5.95 грн
6000+5.18 грн
9000+4.90 грн
15000+4.30 грн
21000+4.12 грн
30000+3.95 грн
75000+3.52 грн
Мінімальне замовлення: 3000
В кошику  од. на суму  грн.
BB85702VH7902XTSA1 BB85702VH7902XTSA1 Infineon Technologies BB837_BB857.pdf Description: DIODE VARACTOR 30V SNGL PG-SC79
Packaging: Tape & Reel (TR)
Package / Case: SC-79, SOD-523
Mounting Type: Surface Mount
Diode Type: Single
Operating Temperature: -55°C ~ 150°C (TJ)
Capacitance @ Vr, F: 0.52pF @ 28V, 1MHz
Capacitance Ratio Condition: C1/C28
Supplier Device Package: PG-SC79-2-1
Voltage - Peak Reverse (Max): 30 V
Capacitance Ratio: 12.7
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BCV29H6327XTSA1 BCV29_49.pdf
BCV29H6327XTSA1
Виробник: Infineon Technologies
Description: TRANS NPN DARL 30V 0.5A SOT89
Packaging: Tape & Reel (TR)
Package / Case: TO-243AA
Mounting Type: Surface Mount
Transistor Type: NPN - Darlington
Operating Temperature: 150°C (TJ)
Vce Saturation (Max) @ Ib, Ic: 1V @ 100µA, 100mA
Current - Collector Cutoff (Max): 100nA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce: 20000 @ 100mA, 5V
Frequency - Transition: 150MHz
Supplier Device Package: PG-SOT89
Grade: Automotive
Current - Collector (Ic) (Max): 500 mA
Voltage - Collector Emitter Breakdown (Max): 30 V
Power - Max: 1 W
Qualification: AEC-Q101
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BCX51H6327XTSA1 infineon-bcx51-bcx52-bcx53-ds-en.pdf
BCX51H6327XTSA1
Виробник: Infineon Technologies
Description: TRANS PNP 45V 1A PG-SOT89
Packaging: Tape & Reel (TR)
Package / Case: TO-243AA
Mounting Type: Surface Mount
Transistor Type: PNP
Operating Temperature: 150°C (TJ)
Vce Saturation (Max) @ Ib, Ic: 500mV @ 50mA, 500mA
Current - Collector Cutoff (Max): 100nA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce: 40 @ 150mA, 2V
Frequency - Transition: 125MHz
Supplier Device Package: PG-SOT89
Part Status: Not For New Designs
Current - Collector (Ic) (Max): 1 A
Voltage - Collector Emitter Breakdown (Max): 45 V
Power - Max: 2 W
Grade: Automotive
Qualification: AEC-Q101
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BCX5216H6327XTSA1 infineon-bcx51-bcx52-bcx53-ds-en.pdf
BCX5216H6327XTSA1
Виробник: Infineon Technologies
Description: TRANS PNP 60V 1A PG-SOT89
Packaging: Tape & Reel (TR)
Package / Case: TO-243AA
Mounting Type: Surface Mount
Transistor Type: PNP
Operating Temperature: 150°C (TJ)
Vce Saturation (Max) @ Ib, Ic: 500mV @ 50mA, 500mA
Current - Collector Cutoff (Max): 100nA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce: 100 @ 150mA, 2V
Frequency - Transition: 125MHz
Supplier Device Package: PG-SOT89
Part Status: Last Time Buy
Current - Collector (Ic) (Max): 1 A
Voltage - Collector Emitter Breakdown (Max): 60 V
Power - Max: 2 W
Grade: Automotive
Qualification: AEC-Q101
товару немає в наявності
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BCX52H6327XTSA1 infineon-bcx51-bcx52-bcx53-ds-en.pdf
BCX52H6327XTSA1
Виробник: Infineon Technologies
Description: TRANS PNP 60V 1A PG-SOT89
Packaging: Tape & Reel (TR)
Package / Case: TO-243AA
Mounting Type: Surface Mount
Transistor Type: PNP
Operating Temperature: 150°C (TJ)
Vce Saturation (Max) @ Ib, Ic: 500mV @ 50mA, 500mA
Current - Collector Cutoff (Max): 100nA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce: 40 @ 150mA, 2V
Frequency - Transition: 125MHz
Supplier Device Package: PG-SOT89
Part Status: Last Time Buy
Current - Collector (Ic) (Max): 1 A
Voltage - Collector Emitter Breakdown (Max): 60 V
Power - Max: 2 W
Grade: Automotive
Qualification: AEC-Q101
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BCX5310H6327XTSA1 infineon-bcx51-bcx52-bcx53-ds-en.pdf
BCX5310H6327XTSA1
Виробник: Infineon Technologies
Description: TRANS PNP 80V 1A PG-SOT89
Packaging: Tape & Reel (TR)
Package / Case: TO-243AA
Mounting Type: Surface Mount
Transistor Type: PNP
Operating Temperature: 150°C (TJ)
Vce Saturation (Max) @ Ib, Ic: 500mV @ 50mA, 500mA
Current - Collector Cutoff (Max): 100nA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce: 63 @ 150mA, 2V
Frequency - Transition: 125MHz
Supplier Device Package: PG-SOT89
Part Status: Last Time Buy
Current - Collector (Ic) (Max): 1 A
Voltage - Collector Emitter Breakdown (Max): 80 V
Power - Max: 2 W
Grade: Automotive
Qualification: AEC-Q101
товару немає в наявності
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BCX53H6327XTSA1 infineon-bcx51-bcx52-bcx53-ds-en.pdf
BCX53H6327XTSA1
Виробник: Infineon Technologies
Description: TRANS PNP 80V 1A PG-SOT89
Packaging: Tape & Reel (TR)
Package / Case: TO-243AA
Mounting Type: Surface Mount
Transistor Type: PNP
Operating Temperature: 150°C (TJ)
Vce Saturation (Max) @ Ib, Ic: 500mV @ 50mA, 500mA
Current - Collector Cutoff (Max): 100nA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce: 40 @ 150mA, 2V
Frequency - Transition: 125MHz
Supplier Device Package: PG-SOT89
Part Status: Last Time Buy
Current - Collector (Ic) (Max): 1 A
Voltage - Collector Emitter Breakdown (Max): 80 V
Power - Max: 2 W
Grade: Automotive
Qualification: AEC-Q101
товару немає в наявності
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BCX5516H6327XTSA1 bcx54_bcx55_bcx56.pdf?folderId=db3a304314dca38901155ffc06d51dc7&fileId=db3a3043156fd573011589d20fda0368
BCX5516H6327XTSA1
Виробник: Infineon Technologies
Description: TRANS NPN 60V 1A PG-SOT89
Packaging: Tape & Reel (TR)
Package / Case: TO-243AA
Mounting Type: Surface Mount
Transistor Type: NPN
Operating Temperature: 150°C (TJ)
Vce Saturation (Max) @ Ib, Ic: 500mV @ 50mA, 500mA
Current - Collector Cutoff (Max): 100nA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce: 100 @ 150mA, 2V
Frequency - Transition: 100MHz
Supplier Device Package: PG-SOT89
Part Status: Last Time Buy
Current - Collector (Ic) (Max): 1 A
Voltage - Collector Emitter Breakdown (Max): 60 V
Power - Max: 2 W
Grade: Automotive
Qualification: AEC-Q101
товару немає в наявності
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BCX5516H6433XTMA1 bcx54_bcx55_bcx56.pdf?folderId=db3a304314dca38901155ffc06d51dc7&fileId=db3a3043156fd573011589d20fda0368
BCX5516H6433XTMA1
Виробник: Infineon Technologies
Description: TRANS NPN 60V 1A PG-SOT89
Packaging: Tape & Reel (TR)
Package / Case: TO-243AA
Mounting Type: Surface Mount
Transistor Type: NPN
Operating Temperature: 150°C (TJ)
Vce Saturation (Max) @ Ib, Ic: 500mV @ 50mA, 500mA
Current - Collector Cutoff (Max): 100nA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce: 100 @ 150mA, 2V
Frequency - Transition: 100MHz
Supplier Device Package: PG-SOT89
Part Status: Last Time Buy
Current - Collector (Ic) (Max): 1 A
Voltage - Collector Emitter Breakdown (Max): 60 V
Power - Max: 2 W
Grade: Automotive
Qualification: AEC-Q101
товару немає в наявності
В кошику  од. на суму  грн.
BCX5616H6433XTMA1 bcx54_bcx55_bcx56.pdf?folderId=db3a304314dca38901155ffc06d51dc7&fileId=db3a3043156fd573011589d20fda0368
BCX5616H6433XTMA1
Виробник: Infineon Technologies
Description: TRANS NPN 80V 1A PG-SOT89
Packaging: Tape & Reel (TR)
Package / Case: TO-243AA
Mounting Type: Surface Mount
Transistor Type: NPN
Operating Temperature: 150°C (TJ)
Vce Saturation (Max) @ Ib, Ic: 500mV @ 50mA, 500mA
Current - Collector Cutoff (Max): 100nA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce: 100 @ 150mA, 2V
Frequency - Transition: 100MHz
Supplier Device Package: PG-SOT89
Part Status: Last Time Buy
Current - Collector (Ic) (Max): 1 A
Voltage - Collector Emitter Breakdown (Max): 80 V
Power - Max: 2 W
Grade: Automotive
Qualification: AEC-Q101
товару немає в наявності
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BCX56H6327XTSA1 bcx54_bcx55_bcx56.pdf?folderId=db3a304314dca38901155ffc06d51dc7&fileId=db3a3043156fd573011589d20fda0368
BCX56H6327XTSA1
Виробник: Infineon Technologies
Description: TRANS NPN 80V 1A PG-SOT89
Packaging: Tape & Reel (TR)
Package / Case: TO-243AA
Mounting Type: Surface Mount
Transistor Type: NPN
Operating Temperature: 150°C (TJ)
Vce Saturation (Max) @ Ib, Ic: 500mV @ 50mA, 500mA
Current - Collector Cutoff (Max): 100nA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce: 40 @ 150mA, 2V
Frequency - Transition: 100MHz
Supplier Device Package: PG-SOT89
Part Status: Last Time Buy
Current - Collector (Ic) (Max): 1 A
Voltage - Collector Emitter Breakdown (Max): 80 V
Power - Max: 2 W
Grade: Automotive
Qualification: AEC-Q101
товару немає в наявності
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BCX6816H6327XTSA1 bcx68.pdf?folderId=db3a304314dca38901155ffc06d51dc7&fileId=db3a3043156fd573011589ef403903e7
BCX6816H6327XTSA1
Виробник: Infineon Technologies
Description: TRANS NPN 20V 1A PG-SOT89
Packaging: Tape & Reel (TR)
Package / Case: TO-243AA
Mounting Type: Surface Mount
Transistor Type: NPN
Operating Temperature: 150°C (TJ)
Vce Saturation (Max) @ Ib, Ic: 500mV @ 100mA, 1A
Current - Collector Cutoff (Max): 100nA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce: 100 @ 500mA, 1V
Frequency - Transition: 100MHz
Supplier Device Package: PG-SOT89
Part Status: Last Time Buy
Current - Collector (Ic) (Max): 1 A
Voltage - Collector Emitter Breakdown (Max): 20 V
Power - Max: 3 W
Grade: Automotive
Qualification: AEC-Q101
товару немає в наявності
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BCX6910H6327XTSA1 bcx69.pdf?folderId=db3a304314dca38901155ffc06d51dc7&fileId=db3a3043156fd573011589f3f56603ee&location=.en.product.findProductTypeByName.html_dgdl_bcx69.pdf
BCX6910H6327XTSA1
Виробник: Infineon Technologies
Description: TRANS PNP 20V 1A PG-SOT89
Packaging: Tape & Reel (TR)
Package / Case: TO-243AA
Mounting Type: Surface Mount
Transistor Type: PNP
Operating Temperature: 150°C (TJ)
Vce Saturation (Max) @ Ib, Ic: 500mV @ 100mA, 1A
Current - Collector Cutoff (Max): 100nA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce: 85 @ 500mA, 1V
Frequency - Transition: 100MHz
Supplier Device Package: PG-SOT89
Grade: Automotive
Current - Collector (Ic) (Max): 1 A
Voltage - Collector Emitter Breakdown (Max): 20 V
Power - Max: 3 W
Qualification: AEC-Q101
товару немає в наявності
В кошику  од. на суму  грн.
BCX6916H6327XTSA1 bcx69.pdf?folderId=db3a304314dca38901155ffc06d51dc7&fileId=db3a3043156fd573011589f3f56603ee&location=.en.product.findProductTypeByName.html_dgdl_bcx69.pdf
BCX6916H6327XTSA1
Виробник: Infineon Technologies
Description: TRANS PNP 20V 1A PG-SOT89
Packaging: Tape & Reel (TR)
Package / Case: TO-243AA
Mounting Type: Surface Mount
Transistor Type: PNP
Operating Temperature: 150°C (TJ)
Vce Saturation (Max) @ Ib, Ic: 500mV @ 100mA, 1A
Current - Collector Cutoff (Max): 100nA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce: 100 @ 500mA, 1V
Frequency - Transition: 100MHz
Supplier Device Package: PG-SOT89
Part Status: Last Time Buy
Current - Collector (Ic) (Max): 1 A
Voltage - Collector Emitter Breakdown (Max): 20 V
Power - Max: 3 W
Grade: Automotive
Qualification: AEC-Q101
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BCX6925H6327XTSA1 bcx69.pdf?folderId=db3a304314dca38901155ffc06d51dc7&fileId=db3a3043156fd573011589f3f56603ee&location=.en.product.findProductTypeByName.html_dgdl_bcx69.pdf
BCX6925H6327XTSA1
Виробник: Infineon Technologies
Description: TRANS PNP 20V 1A PG-SOT89
Packaging: Tape & Reel (TR)
Package / Case: TO-243AA
Mounting Type: Surface Mount
Transistor Type: PNP
Operating Temperature: 150°C (TJ)
Vce Saturation (Max) @ Ib, Ic: 500mV @ 100mA, 1A
Current - Collector Cutoff (Max): 100nA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce: 160 @ 500mA, 1V
Frequency - Transition: 100MHz
Supplier Device Package: PG-SOT89
Grade: Automotive
Current - Collector (Ic) (Max): 1 A
Voltage - Collector Emitter Breakdown (Max): 20 V
Power - Max: 3 W
Qualification: AEC-Q101
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BFN18H6327XTSA1 bfn18.pdf?folderId=db3a30431441fb5d011449af3ad90232&fileId=db3a30431441fb5d011449b188060234
BFN18H6327XTSA1
Виробник: Infineon Technologies
Description: TRANSISTOR AF SOT89-4
товару немає в наявності
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BFN19H6327XTSA1 bfn19.pdf?folderId=db3a30431441fb5d011449af3ad90232&fileId=db3a30431441fb5d011449c1d62e0238
BFN19H6327XTSA1
Виробник: Infineon Technologies
Description: TRANS PNP 300V 0.2A SOT89
Packaging: Tape & Reel (TR)
Package / Case: TO-243AA
Mounting Type: Surface Mount
Transistor Type: PNP
Operating Temperature: 150°C (TJ)
Vce Saturation (Max) @ Ib, Ic: 500mV @ 2mA, 20mA
Current - Collector Cutoff (Max): 100nA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce: 30 @ 30mA, 10V
Frequency - Transition: 100MHz
Supplier Device Package: PG-SOT89
Grade: Automotive
Current - Collector (Ic) (Max): 200 mA
Voltage - Collector Emitter Breakdown (Max): 300 V
Power - Max: 1 W
Qualification: AEC-Q101
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FF150R17KE4HOSA1 Infineon-FF150R17KE4-DS-v02_02-en_de.pdf?fileId=db3a3043294a3558012959da50bd7c47
Виробник: Infineon Technologies
Description: MODULE IGBT 1700V AG-62MM-1
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BSM100GB170DN2HOSA1 BSM_100_GB_170_DN2.pdf
Виробник: Infineon Technologies
Description: IGBT MOD 1700V 145A 1000W
Packaging: Tray
Package / Case: Module
Mounting Type: Chassis Mount
Input: Standard
Configuration: Half Bridge
Operating Temperature: 150°C (TJ)
Vce(on) (Max) @ Vge, Ic: 3.9V @ 15V, 100A
NTC Thermistor: No
Supplier Device Package: Module
Current - Collector (Ic) (Max): 145 A
Voltage - Collector Emitter Breakdown (Max): 1700 V
Power - Max: 1000 W
Current - Collector Cutoff (Max): 1 mA
Input Capacitance (Cies) @ Vce: 16 nF @ 25 V
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BSM150GB170DN2HOSA1 BSM_150_GB_170_DN2.pdf
Виробник: Infineon Technologies
Description: IGBT MOD 1700V 220A 1250W MOD
Packaging: Tray
Package / Case: Module
Mounting Type: Chassis Mount
Input: Standard
Configuration: Half Bridge
Operating Temperature: 150°C (TJ)
Vce(on) (Max) @ Vge, Ic: 3.9V @ 15V, 150A
NTC Thermistor: No
Supplier Device Package: Module
Part Status: Obsolete
Current - Collector (Ic) (Max): 220 A
Voltage - Collector Emitter Breakdown (Max): 1700 V
Power - Max: 1250 W
Current - Collector Cutoff (Max): 1.5 mA
Input Capacitance (Cies) @ Vce: 20 nF @ 25 V
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BSM300GA170DN2HOSA1 BSM_300_GA_170_DN2.pdf
Виробник: Infineon Technologies
Description: IGBT MOD 1700V 440A 2500W
Packaging: Tray
Package / Case: Module
Mounting Type: Chassis Mount
Input: Standard
Configuration: Single
Operating Temperature: 150°C (TJ)
Vce(on) (Max) @ Vge, Ic: 3.9V @ 15V, 300A
NTC Thermistor: No
Supplier Device Package: Module
Current - Collector (Ic) (Max): 440 A
Voltage - Collector Emitter Breakdown (Max): 1700 V
Power - Max: 2500 W
Current - Collector Cutoff (Max): 3 mA
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TLV493DA1B6HTSA2 TLV493D-A1B6_Rev1.1_4-9-19.pdf
TLV493DA1B6HTSA2
Виробник: Infineon Technologies
Description: SENSOR ROTARY 360DEG SMD
Packaging: Tape & Reel (TR)
Package / Case: SOT-23-6 Thin, TSOT-23-6
Mounting Type: Surface Mount
Output: I2C
Operating Temperature: -40°C ~ 125°C
Termination Style: SMD (SMT) Tab
Voltage - Supply: 2.7V ~ 3.5V
Actuator Type: External Magnet, Not Included
Technology: Hall Effect
For Measuring: Linear, Rotary Position
Supplier Device Package: PG-TSOP-6-6-5
Rotation Angle - Electrical, Mechanical: 0° ~ 360°, Continuous
Part Status: Active
Grade: Automotive
Qualification: AEC-Q100
на замовлення 12000 шт:
термін постачання 21-31 дні (днів)
Кількість Ціна
3000+34.55 грн
6000+32.12 грн
9000+31.50 грн
Мінімальне замовлення: 3000
В кошику  од. на суму  грн.
TLV493DA1B62GOKITTOBO1 TLV493D-A1B6_Rev1.1_4-9-19.pdf
TLV493DA1B62GOKITTOBO1
Виробник: Infineon Technologies
Description: 3D MAGNETICS SENSOR 2GO KIT-TL
Packaging: Bulk
Interface: I2C
Voltage - Supply: 2.7V ~ 3.5V
Sensor Type: Magnetic, Linear, Rotary Position
Utilized IC / Part: TLV493D-A1B6
Supplied Contents: Board(s)
Part Status: Obsolete
Contents: Board(s)
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TLV493DA1B6HTSA2 TLV493D-A1B6_Rev1.1_4-9-19.pdf
TLV493DA1B6HTSA2
Виробник: Infineon Technologies
Description: SENSOR ROTARY 360DEG SMD
Packaging: Cut Tape (CT)
Package / Case: SOT-23-6 Thin, TSOT-23-6
Mounting Type: Surface Mount
Output: I2C
Operating Temperature: -40°C ~ 125°C
Termination Style: SMD (SMT) Tab
Voltage - Supply: 2.7V ~ 3.5V
Actuator Type: External Magnet, Not Included
Technology: Hall Effect
For Measuring: Linear, Rotary Position
Supplier Device Package: PG-TSOP-6-6-5
Rotation Angle - Electrical, Mechanical: 0° ~ 360°, Continuous
Part Status: Active
Grade: Automotive
Qualification: AEC-Q100
на замовлення 12248 шт:
термін постачання 21-31 дні (днів)
Кількість Ціна
6+59.61 грн
7+50.35 грн
10+47.73 грн
25+41.90 грн
50+39.93 грн
100+38.11 грн
500+33.92 грн
1000+32.59 грн
Мінімальне замовлення: 6
В кошику  од. на суму  грн.
BFP780H6327XTSA1 Infineon-BFP780-DS-v04_00-EN.pdf?fileId=5546d46265f064ff01663896b2fe4eb3
BFP780H6327XTSA1
Виробник: Infineon Technologies
Description: RF TRANS NPN 6.1V 900MHZ SOT343
Packaging: Cut Tape (CT)
Package / Case: SC-82A, SOT-343
Mounting Type: Surface Mount
Transistor Type: NPN
Operating Temperature: 150°C (TJ)
Gain: 27dB
Power - Max: 600mW
Current - Collector (Ic) (Max): 120mA
Voltage - Collector Emitter Breakdown (Max): 6.1V
DC Current Gain (hFE) (Min) @ Ic, Vce: 85 @ 90mA, 5V
Frequency - Transition: 900MHz
Noise Figure (dB Typ @ f): 1.2dB ~ 2.4dB @ 900MHz ~ 3.5GHz
Supplier Device Package: PG-SOT343-4-1
Part Status: Obsolete
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BSC009NE2LS5ATMA1 Infineon-BSC009NE2LS5-DS-v02_00-EN.pdf?fileId=5546d4624bcaebcf014c096c7c152310
BSC009NE2LS5ATMA1
Виробник: Infineon Technologies
Description: MOSFET N-CH 25V 41A/223A TDSON
Packaging: Tape & Reel (TR)
Package / Case: 8-PowerTDFN
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 41A (Ta), 223A (Tc)
Rds On (Max) @ Id, Vgs: 0.9mOhm @ 30A, 10V
Power Dissipation (Max): 2.5W (Ta), 74W (Tc)
Vgs(th) (Max) @ Id: 2V @ 250µA
Supplier Device Package: PG-TDSON-8-7
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±16V
Drain to Source Voltage (Vdss): 25 V
Gate Charge (Qg) (Max) @ Vgs: 57 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 3900 pF @ 12 V
на замовлення 10000 шт:
термін постачання 21-31 дні (днів)
Кількість Ціна
5000+49.79 грн
Мінімальне замовлення: 5000
В кошику  од. на суму  грн.
BSC009NE2LS5IATMA1 Infineon-BSC009NE2LS5I-DS-v02_00-EN.pdf?fileId=5546d4624bcaebcf014c09a38586234e
BSC009NE2LS5IATMA1
Виробник: Infineon Technologies
Description: MOSFET N-CH 25V 40A/217A TDSON
Packaging: Tape & Reel (TR)
Package / Case: 8-PowerTDFN
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 40A (Ta), 217A (Tc)
Rds On (Max) @ Id, Vgs: 0.95mOhm @ 30A, 10V
Power Dissipation (Max): 2.5W (Ta), 74W (Tc)
Vgs(th) (Max) @ Id: 2V @ 250µA
Supplier Device Package: PG-TDSON-8-7
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±16V
Drain to Source Voltage (Vdss): 25 V
Gate Charge (Qg) (Max) @ Vgs: 49 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 3200 pF @ 12 V
на замовлення 5000 шт:
термін постачання 21-31 дні (днів)
Кількість Ціна
5000+57.04 грн
Мінімальне замовлення: 5000
В кошику  од. на суму  грн.
IRF8252TRPBF-1 irf8252pbf-1.pdf?fileId=5546d462533600a40153560d053a1d56
IRF8252TRPBF-1
Виробник: Infineon Technologies
Description: MOSFET N-CH 25V 25A 8SO
Packaging: Tape & Reel (TR)
Package / Case: 8-SOIC (0.154", 3.90mm Width)
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 25A (Ta)
Rds On (Max) @ Id, Vgs: 2.7mOhm @ 25A, 10V
Power Dissipation (Max): 2.5W (Ta)
Vgs(th) (Max) @ Id: 2.35V @ 100µA
Supplier Device Package: PG-DSO-8
Part Status: Obsolete
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 25 V
Gate Charge (Qg) (Max) @ Vgs: 53 nC @ 4.5 V
Input Capacitance (Ciss) (Max) @ Vds: 5305 pF @ 13 V
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IRFH7187TRPBF irfh7187pbf.pdf
Виробник: Infineon Technologies
Description: MOSFET N-CH 100V 18A/105A 8PQFN
Packaging: Tape & Reel (TR)
Package / Case: 8-PowerVDFN
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 18A (Ta), 105A (Tc)
Rds On (Max) @ Id, Vgs: 6mOhm @ 50A, 10V
Power Dissipation (Max): 3.8W (Ta), 132W (Tc)
Vgs(th) (Max) @ Id: 3.6V @ 150µA
Supplier Device Package: 8-PQFN (5x6)
Part Status: Obsolete
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 100 V
Gate Charge (Qg) (Max) @ Vgs: 50 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 2116 pF @ 50 V
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62-0209PBF
Виробник: Infineon Technologies
Description: DIODE SHOCTTKY
товару немає в наявності
В кошику  од. на суму  грн.
62-0216PBF
Виробник: Infineon Technologies
Description: DIODE SHOCTTKY
товару немає в наявності
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62-0239PBF
Виробник: Infineon Technologies
Description: DIODE SHOCTTKY
товару немає в наявності
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62-0245PBF
Виробник: Infineon Technologies
Description: DIODE SHOCTTKY
товару немає в наявності
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62-0253PBF
Виробник: Infineon Technologies
Description: DIODE SHOCTTKY
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62-0254PBF Part_Number_Guide_Web.pdf
Виробник: Infineon Technologies
Description: DIODE SHOCTTKY
товару немає в наявності
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BSC265N10LSFGATMA1 BSC265N10LSF+G_+Rev2.06.pdf?folderId=db3a304313b8b5a60113cee8763b02d7&fileId=db3a30431b3e89eb011b49a375207b46
BSC265N10LSFGATMA1
Виробник: Infineon Technologies
Description: MOSFET N-CH 100V 6.5A/40A TDSON
Packaging: Cut Tape (CT)
Package / Case: 8-PowerTDFN
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 6.5A (Ta), 40A (Tc)
Rds On (Max) @ Id, Vgs: 26.5mOhm @ 20A, 10V
Power Dissipation (Max): 78W (Tc)
Vgs(th) (Max) @ Id: 2.4V @ 43µA
Supplier Device Package: PG-TDSON-8-1
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 100 V
Gate Charge (Qg) (Max) @ Vgs: 21 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 1600 pF @ 50 V
на замовлення 13438 шт:
термін постачання 21-31 дні (днів)
Кількість Ціна
4+109.00 грн
10+66.18 грн
100+44.00 грн
500+32.36 грн
1000+29.48 грн
2000+28.16 грн
Мінімальне замовлення: 4
В кошику  од. на суму  грн.
IPD048N06L3GBTMA1 IPD048N06L3_Rev2.0.pdf?folderId=db3a30431441fb5d01148ca9f1be0e77&fileId=db3a30431ddc9372011e2b4f496e4db0
IPD048N06L3GBTMA1
Виробник: Infineon Technologies
Description: MOSFET N-CH 60V 90A TO252-3
Packaging: Cut Tape (CT)
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 90A (Tc)
Rds On (Max) @ Id, Vgs: 4.8mOhm @ 90A, 10V
Power Dissipation (Max): 115W (Tc)
Vgs(th) (Max) @ Id: 2.2V @ 58µA
Supplier Device Package: PG-TO252-3
Part Status: Obsolete
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 60 V
Gate Charge (Qg) (Max) @ Vgs: 50 nC @ 4.5 V
Input Capacitance (Ciss) (Max) @ Vds: 8400 pF @ 30 V
товару немає в наявності
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1EBN1001AEXUMA1 Infineon-1EBN1001AE-DS-v03_00-EN.pdf?fileId=5546d462503812bb01505fa4d89805a0
1EBN1001AEXUMA1
Виробник: Infineon Technologies
Description: IC GATE DRVR HI/LOW SIDE 14SOIC
Packaging: Tape & Reel (TR)
Package / Case: 14-SOIC (0.154", 3.90mm Width) Exposed Pad
Mounting Type: Surface Mount
Operating Temperature: -40°C ~ 150°C (TJ)
Voltage - Supply: 13V ~ 18V
High Side Voltage - Max (Bootstrap): 1200 V
Supplier Device Package: PG-DSO-14-43
Rise / Fall Time (Typ): 50ns, 90ns
Channel Type: Single
Driven Configuration: High-Side or Low-Side
Number of Drivers: 1
Gate Type: IGBT, MOSFET (N-Channel, P-Channel)
Logic Voltage - VIL, VIH: 1.5V, 3.5V
Part Status: Active
DigiKey Programmable: Not Verified
Grade: Automotive
Qualification: AEC-Q100
товару немає в наявності
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1ED020I12B2XUMA1 Infineon-1ED020I12-B2-DataSheet-v02_02-EN.pdf?fileId=db3a304333227b5e013344bf16f84ca6
1ED020I12B2XUMA1
Виробник: Infineon Technologies
Description: DGT ISO 4.5KV 1CH GT DVR DSO16
Packaging: Tape & Reel (TR)
Package / Case: 16-SOIC (0.295", 7.50mm Width)
Mounting Type: Surface Mount
Operating Temperature: -40°C ~ 150°C (TJ)
Technology: Magnetic Coupling
Current - Output High, Low: 2A, 2A
Voltage - Isolation: 4500Vrms
Supplier Device Package: PG-DSO-16-15
Rise / Fall Time (Typ): 30ns, 50ns
Part Status: Active
Number of Channels: 1
Voltage - Output Supply: 13V ~ 20V
на замовлення 4000 шт:
термін постачання 21-31 дні (днів)
Кількість Ціна
1000+201.08 грн
2000+189.28 грн
3000+187.10 грн
Мінімальне замовлення: 1000
В кошику  од. на суму  грн.
1ED020I12FA2XUMA2 Infineon-1ED020I12FA2-DS-v02_00-en.pdf?fileId=db3a304333227b5e013344d078be4cdf
1ED020I12FA2XUMA2
Виробник: Infineon Technologies
Description: DGTL ISO 4.5KV 1CH GT DVR DSO20
Packaging: Tape & Reel (TR)
Package / Case: 20-SOIC (0.295", 7.50mm Width)
Mounting Type: Surface Mount
Operating Temperature: -40°C ~ 150°C (TJ)
Technology: Magnetic Coupling
Current - Output High, Low: 2A, 2A
Voltage - Isolation: 4500Vrms
Supplier Device Package: PG-DSO-20
Rise / Fall Time (Typ): 30ns, 50ns
Part Status: Not For New Designs
Number of Channels: 1
Voltage - Output Supply: 13V ~ 20V
Grade: Automotive
Qualification: AEC-Q100
на замовлення 3000 шт:
термін постачання 21-31 дні (днів)
Кількість Ціна
1000+290.84 грн
Мінімальне замовлення: 1000
В кошику  од. на суму  грн.
1ED020I12FTAXUMA2 Infineon-1ED020I12FTA-DS-v03_00-EN.pdf?fileId=db3a30432e779412012e7b85bdb73874
1ED020I12FTAXUMA2
Виробник: Infineon Technologies
Description: DGT ISO 4.5KV 1CH GT DVR DSO20
Packaging: Tape & Reel (TR)
Package / Case: 20-SOIC (0.295", 7.50mm Width)
Mounting Type: Surface Mount
Operating Temperature: -40°C ~ 150°C (TJ)
Technology: Magnetic Coupling
Current - Output High, Low: 2A, 2A
Voltage - Isolation: 4500Vrms
Supplier Device Package: PG-DSO-20-55
Rise / Fall Time (Typ): 30ns, 20ns
Part Status: Not For New Designs
Number of Channels: 1
Voltage - Output Supply: 4.5V ~ 5.5V
на замовлення 1000 шт:
термін постачання 21-31 дні (днів)
Кількість Ціна
1000+291.31 грн
Мінімальне замовлення: 1000
В кошику  од. на суму  грн.
1EDI05I12AFXUMA1 Infineon--DS-v02_00-EN.pdf?fileId=db3a3043427ac3e201428e648a333734
1EDI05I12AFXUMA1
Виробник: Infineon Technologies
Description: DIGITAL ISO 1CH GATE DVR DSO8-51
Packaging: Tape & Reel (TR)
Package / Case: 8-SOIC (0.154", 3.90mm Width)
Mounting Type: Surface Mount
Operating Temperature: -40°C ~ 150°C (TJ)
Technology: Magnetic Coupling
Supplier Device Package: PG-DSO-8-51
Rise / Fall Time (Typ): 10ns, 9ns
Number of Channels: 1
Voltage - Output Supply: 13V ~ 35V
на замовлення 10000 шт:
термін постачання 21-31 дні (днів)
Кількість Ціна
2500+59.81 грн
5000+55.46 грн
Мінімальне замовлення: 2500
В кошику  од. на суму  грн.
1EDI2001ASXUMA2 1EDI2001AS.pdf
1EDI2001ASXUMA2
Виробник: Infineon Technologies
Description: DGT ISO 3.75KV 1CH GT DVR DSO36
Packaging: Tape & Reel (TR)
Package / Case: 36-BSSOP (0.295", 7.50mm Width)
Mounting Type: Surface Mount
Operating Temperature: -40°C ~ 150°C (TJ)
Technology: Magnetic Coupling
Current - Output High, Low: 1A, 1A
Voltage - Isolation: 3750Vrms
Supplier Device Package: PG-DSO-36-63
Rise / Fall Time (Typ): 30ns, 60ns
Number of Channels: 1
Voltage - Output Supply: 13V ~ 18V
товару немає в наявності
В кошику  од. на суму  грн.
1EDI20I12MFXUMA1 1EDI10I12MFXUMA1.pdf
1EDI20I12MFXUMA1
Виробник: Infineon Technologies
Description: DIGITAL ISO 1CH GATE DVR DSO8-51
Packaging: Tape & Reel (TR)
Package / Case: 8-SOIC (0.154", 3.90mm Width)
Mounting Type: Surface Mount
Operating Temperature: -40°C ~ 150°C (TJ)
Technology: Magnetic Coupling
Supplier Device Package: PG-DSO-8-51
Rise / Fall Time (Typ): 9ns, 6ns
Number of Channels: 1
Voltage - Output Supply: 13V ~ 18V
на замовлення 2500 шт:
термін постачання 21-31 дні (днів)
Кількість Ціна
2500+57.30 грн
Мінімальне замовлення: 2500
В кошику  од. на суму  грн.
1EDI20N12AFXUMA1 1EDIxxy12AF.pdf
1EDI20N12AFXUMA1
Виробник: Infineon Technologies
Description: DIGITAL ISO 1CH GATE DVR DSO8-51
Packaging: Tape & Reel (TR)
Package / Case: 8-SOIC (0.154", 3.90mm Width)
Mounting Type: Surface Mount
Operating Temperature: -40°C ~ 150°C (TJ)
Technology: Magnetic Coupling
Supplier Device Package: PG-DSO-8-51
Rise / Fall Time (Typ): 10ns, 9ns
Number of Channels: 1
Voltage - Output Supply: 10V ~ 35V
на замовлення 7500 шт:
термін постачання 21-31 дні (днів)
Кількість Ціна
2500+57.30 грн
5000+53.94 грн
7500+53.32 грн
Мінімальне замовлення: 2500
В кошику  од. на суму  грн.
1EDI30I12MFXUMA1 Infineon-1EDIXXI12MF-DS-v02_00-EN.pdf?fileId=5546d46145f1f3a401462944e0190fd7
1EDI30I12MFXUMA1
Виробник: Infineon Technologies
Description: DIGITAL ISO 1CH GATE DVR DSO8-51
Packaging: Tape & Reel (TR)
Package / Case: 8-SOIC (0.154", 3.90mm Width)
Mounting Type: Surface Mount
Operating Temperature: -40°C ~ 150°C (TJ)
Technology: Magnetic Coupling
Supplier Device Package: PG-DSO-8-51
Rise / Fall Time (Typ): 9ns, 6ns
Part Status: Active
Number of Channels: 1
Voltage - Output Supply: 13V ~ 18V
товару немає в наявності
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1EDI40I12AFXUMA1 Infineon--DS-v02_00-EN.pdf?fileId=db3a3043427ac3e201428e648a333734
1EDI40I12AFXUMA1
Виробник: Infineon Technologies
Description: DIGITAL ISO 1CH GATE DVR DSO8-51
Packaging: Tape & Reel (TR)
Package / Case: 8-SOIC (0.154", 3.90mm Width)
Mounting Type: Surface Mount
Operating Temperature: -40°C ~ 150°C (TJ)
Technology: Magnetic Coupling
Supplier Device Package: PG-DSO-8-51
Rise / Fall Time (Typ): 10ns, 9ns
Number of Channels: 1
Voltage - Output Supply: 13V ~ 35V
на замовлення 7500 шт:
термін постачання 21-31 дні (днів)
Кількість Ціна
2500+66.07 грн
5000+61.27 грн
Мінімальне замовлення: 2500
В кошику  од. на суму  грн.
1EDI60I12AFXUMA1 Infineon--DS-v02_00-EN.pdf?fileId=db3a3043427ac3e201428e648a333734
1EDI60I12AFXUMA1
Виробник: Infineon Technologies
Description: DIGITAL ISO 1CH GATE DVR DSO8-51
Packaging: Tape & Reel (TR)
Package / Case: 8-SOIC (0.154", 3.90mm Width)
Mounting Type: Surface Mount
Operating Temperature: -40°C ~ 150°C (TJ)
Technology: Magnetic Coupling
Supplier Device Package: PG-DSO-8-51
Rise / Fall Time (Typ): 10ns, 9ns
Number of Channels: 1
Voltage - Output Supply: 13V ~ 35V
на замовлення 5000 шт:
термін постачання 21-31 дні (днів)
Кількість Ціна
2500+74.52 грн
5000+70.21 грн
Мінімальне замовлення: 2500
В кошику  од. на суму  грн.
1EDI60N12AFXUMA1 1EDIxxy12AF.pdf
1EDI60N12AFXUMA1
Виробник: Infineon Technologies
Description: DIGITAL ISO 1CH GATE DVR DSO8-51
Packaging: Tape & Reel (TR)
Package / Case: 8-SOIC (0.154", 3.90mm Width)
Mounting Type: Surface Mount
Operating Temperature: -40°C ~ 150°C (TJ)
Technology: Magnetic Coupling
Supplier Device Package: PG-DSO-8-51
Rise / Fall Time (Typ): 10ns, 9ns
Part Status: Active
Number of Channels: 1
Voltage - Output Supply: 10V ~ 35V
на замовлення 2500 шт:
термін постачання 21-31 дні (днів)
Кількість Ціна
2500+69.24 грн
Мінімальне замовлення: 2500
В кошику  од. на суму  грн.
2ED020I06FIXUMA1 Infineon-2ED020I06-FI-DS-v02_00-EN.pdf?fileId=5546d4624fb7fef2014fda7f8a9335d0
2ED020I06FIXUMA1
Виробник: Infineon Technologies
Description: IC GATE DRVR HALF-BRIDGE DSO18-2
Packaging: Tape & Reel (TR)
Package / Case: 18-SOIC (0.295", 7.50mm Width)
Mounting Type: Surface Mount
Operating Temperature: -40°C ~ 125°C (TJ)
Voltage - Supply: 14V ~ 18V
Input Type: Inverting
High Side Voltage - Max (Bootstrap): 650 V
Supplier Device Package: PG-DSO-18-2
Rise / Fall Time (Typ): 20ns, 20ns
Channel Type: Independent
Driven Configuration: Half-Bridge
Number of Drivers: 2
Gate Type: IGBT, MOSFET (N-Channel)
Logic Voltage - VIL, VIH: 0.8V, 2V
Current - Peak Output (Source, Sink): 1A, 2A
Part Status: Active
DigiKey Programmable: Not Verified
товару немає в наявності
В кошику  од. на суму  грн.
2ED020I12F2XUMA1 Infineon-2ED020I12_F2-DS-v02_00-en.pdf?fileId=db3a304333227b5e013344c70fc64cc8
2ED020I12F2XUMA1
Виробник: Infineon Technologies
Description: IC GATE DRVR HALF-BRIDG DSO36-58
Packaging: Tape & Reel (TR)
Package / Case: 36-BSSOP (0.295", 7.50mm Width), 32 Leads
Mounting Type: Surface Mount
Operating Temperature: -40°C ~ 150°C (TJ)
Voltage - Supply: 13V ~ 20V
Input Type: Inverting, Non-Inverting
High Side Voltage - Max (Bootstrap): 1200 V
Supplier Device Package: PG-DSO-36-58
Rise / Fall Time (Typ): 30ns, 50ns
Channel Type: Independent
Driven Configuration: Half-Bridge
Number of Drivers: 2
Gate Type: IGBT
Logic Voltage - VIL, VIH: 1.5V, 3.5V
Current - Peak Output (Source, Sink): 2A, 2A
Part Status: Active
DigiKey Programmable: Not Verified
на замовлення 2000 шт:
термін постачання 21-31 дні (днів)
Кількість Ціна
1000+265.56 грн
2000+250.26 грн
Мінімальне замовлення: 1000
В кошику  од. на суму  грн.
2ED020I12FAXUMA2 Infineon-2ED020I12FA-DS-v02_02-en.pdf?fileId=db3a30432e779412012e7b87d2b23878
2ED020I12FAXUMA2
Виробник: Infineon Technologies
Description: IC GATE DRVR HALF-BRIDG DSO36-58
Packaging: Tape & Reel (TR)
Package / Case: 36-BSSOP (0.295", 7.50mm Width), 32 Leads
Mounting Type: Surface Mount
Operating Temperature: -40°C ~ 150°C (TJ)
Voltage - Supply: 13V ~ 20V
Input Type: Inverting, Non-Inverting
High Side Voltage - Max (Bootstrap): 1200 V
Supplier Device Package: PG-DSO-36-58
Rise / Fall Time (Typ): 30ns, 50ns
Channel Type: Independent
Driven Configuration: Half-Bridge
Number of Drivers: 2
Gate Type: IGBT, MOSFET (N-Channel, P-Channel)
Logic Voltage - VIL, VIH: 1.5V, 3.5V
Current - Peak Output (Source, Sink): 2.4A, 2.4A
Part Status: Not For New Designs
DigiKey Programmable: Not Verified
на замовлення 1000 шт:
термін постачання 21-31 дні (днів)
Кількість Ціна
1000+558.44 грн
Мінімальне замовлення: 1000
В кошику  од. на суму  грн.
2EDN7524FXTMA1 Infineon-2EDN752x-2EDN852x-DS--DS-v02_03-EN.pdf?fileId=5546d462525dbac40152abcc7dbb1727
2EDN7524FXTMA1
Виробник: Infineon Technologies
Description: IC GATE DRVR LOW-SIDE 8SOIC
Packaging: Tape & Reel (TR)
Package / Case: 8-SOIC (0.154", 3.90mm Width)
Mounting Type: Surface Mount
Operating Temperature: -40°C ~ 150°C (TJ)
Voltage - Supply: 4.5V ~ 20V
Input Type: Non-Inverting
Supplier Device Package: PG-DSO-8-60
Rise / Fall Time (Typ): 5.3ns, 4.5ns
Channel Type: Independent
Driven Configuration: Low-Side
Number of Drivers: 2
Gate Type: MOSFET (N-Channel)
Current - Peak Output (Source, Sink): 5A, 5A
Part Status: Active
DigiKey Programmable: Not Verified
на замовлення 15000 шт:
термін постачання 21-31 дні (днів)
Кількість Ціна
2500+26.71 грн
5000+25.06 грн
7500+24.73 грн
12500+22.87 грн
Мінімальне замовлення: 2500
В кошику  од. на суму  грн.
6ED003L06F2XUMA1 Infineon-6ED003L0x_F2-DS-v02_09-EN.pdf?fileId=db3a3043315daf4401316108306d4190
6ED003L06F2XUMA1
Виробник: Infineon Technologies
Description: IC GATE DRVR HALF-BRIDGE 28SOIC
Packaging: Tape & Reel (TR)
Package / Case: 28-SOIC (0.295", 7.50mm Width)
Mounting Type: Surface Mount
Operating Temperature: -40°C ~ 125°C (TJ)
Voltage - Supply: 13V ~ 17.5V
Input Type: Inverting
High Side Voltage - Max (Bootstrap): 620 V
Supplier Device Package: PG-DSO-28
Rise / Fall Time (Typ): 60ns, 26ns
Channel Type: 3-Phase
Driven Configuration: Half-Bridge
Number of Drivers: 6
Gate Type: IGBT, MOSFET (N-Channel, P-Channel)
Logic Voltage - VIL, VIH: 1.1V, 1.7V
Part Status: Not For New Designs
DigiKey Programmable: Not Verified
на замовлення 1000 шт:
термін постачання 21-31 дні (днів)
Кількість Ціна
1000+165.52 грн
Мінімальне замовлення: 1000
В кошику  од. на суму  грн.
6EDL04I06PTXUMA1 6ED2-DB-Rev2_3.pdf?folderId=db3a30431a5c32f2011a77fa27a86cb5&fileId=db3a304336797ff901367c18c18445af
6EDL04I06PTXUMA1
Виробник: Infineon Technologies
Description: IC GATE DRVR HALF-BRIDGE DSO28
Packaging: Tape & Reel (TR)
Package / Case: 28-SOIC (0.295", 7.50mm Width)
Mounting Type: Surface Mount
Operating Temperature: -40°C ~ 125°C (TJ)
Voltage - Supply: 13V ~ 17.5V
Input Type: Non-Inverting
High Side Voltage - Max (Bootstrap): 600 V
Supplier Device Package: PG-DSO-28
Rise / Fall Time (Typ): 60ns, 26ns
Channel Type: 3-Phase
Driven Configuration: Half-Bridge
Number of Drivers: 6
Gate Type: IGBT, MOSFET (N-Channel, P-Channel)
Logic Voltage - VIL, VIH: 1.1V, 1.7V
DigiKey Programmable: Not Verified
на замовлення 1000 шт:
термін постачання 21-31 дні (днів)
Кількість Ціна
1000+142.41 грн
Мінімальне замовлення: 1000
В кошику  од. на суму  грн.
6EDL04N06PTXUMA1 6ED2-DB-Rev2_3.pdf?folderId=db3a30431a5c32f2011a77fa27a86cb5&fileId=db3a304336797ff901367c18c18445af
6EDL04N06PTXUMA1
Виробник: Infineon Technologies
Description: IC GATE DRVR HALF-BRIDGE 28TSSOP
Packaging: Tape & Reel (TR)
Package / Case: 28-SOIC (0.295", 7.50mm Width)
Mounting Type: Surface Mount
Operating Temperature: -40°C ~ 125°C (TJ)
Voltage - Supply: 10V ~ 17.5V
Input Type: Non-Inverting
High Side Voltage - Max (Bootstrap): 620 V
Supplier Device Package: PG-DSO-28
Rise / Fall Time (Typ): 60ns, 26ns
Channel Type: 3-Phase
Driven Configuration: Half-Bridge
Number of Drivers: 6
Gate Type: IGBT, MOSFET (N-Channel, P-Channel)
Logic Voltage - VIL, VIH: 1.1V, 1.7V
Part Status: Active
DigiKey Programmable: Not Verified
на замовлення 1000 шт:
термін постачання 21-31 дні (днів)
Кількість Ціна
1000+132.36 грн
Мінімальне замовлення: 1000
В кошику  од. на суму  грн.
BA89502VH6327XTSA1 Part_Number_Guide_Web.pdf
Виробник: Infineon Technologies
Description: DIODE GEN PURP SC79-2
Packaging: Tape & Reel (TR)
Part Status: Obsolete
товару немає в наявності
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BAS7002VH6327XTSA1 INFNS30154-1.pdf?t.download=true&u=5oefqw
BAS7002VH6327XTSA1
Виробник: Infineon Technologies
Description: DIODE SCHOTTKY 70V 70MA PGSC7921
Packaging: Tape & Reel (TR)
Package / Case: SC-79, SOD-523
Mounting Type: Surface Mount
Speed: Small Signal =< 200mA (Io), Any Speed
Reverse Recovery Time (trr): 100 ps
Technology: Schottky
Capacitance @ Vr, F: 2pF @ 0V, 1MHz
Current - Average Rectified (Io): 70mA
Supplier Device Package: PG-SC79-2-1
Operating Temperature - Junction: 150°C (Max)
Part Status: Active
Voltage - DC Reverse (Vr) (Max): 70 V
Voltage - Forward (Vf) (Max) @ If: 1 V @ 15 mA
Current - Reverse Leakage @ Vr: 100 nA @ 50 V
Grade: Automotive
Qualification: AEC-Q101
на замовлення 3000 шт:
термін постачання 21-31 дні (днів)
Кількість Ціна
3000+3.34 грн
Мінімальне замовлення: 3000
В кошику  од. на суму  грн.
BAT1502ELE6327XTMA1 Infineon-BAT15-02EL-DS-v01_00-EN.pdf?fileId=5546d46265f064ff01663895df9e4e74
BAT1502ELE6327XTMA1
Виробник: Infineon Technologies
Description: DIODE SCHOTTKY 4V 100MW TSLP219
Packaging: Tape & Reel (TR)
Package / Case: 0402 (1006 Metric)
Diode Type: Schottky - Single
Operating Temperature: 150°C (TJ)
Capacitance @ Vr, F: 0.35pF @ 0V, 1MHz
Voltage - Peak Reverse (Max): 4V
Supplier Device Package: PG-TSLP-2-19
Part Status: Active
Current - Max: 110 mA
Power Dissipation (Max): 100 mW
на замовлення 15000 шт:
термін постачання 21-31 дні (днів)
Кількість Ціна
15000+14.78 грн
Мінімальне замовлення: 15000
В кошику  од. на суму  грн.
BAT6402VH6327XTSA1 Infineon-BAT64SERIES-DataSheet-v01_00-EN.pdf?fileId=5546d4626d66c2b1016d73f85ab420ed
BAT6402VH6327XTSA1
Виробник: Infineon Technologies
Description: DIODE SCHOTTK 40V 250MA PGSC7921
Packaging: Tape & Reel (TR)
Package / Case: SC-79, SOD-523
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 5 ns
Technology: Schottky
Capacitance @ Vr, F: 6pF @ 0V, 1MHz
Current - Average Rectified (Io): 250mA
Supplier Device Package: PG-SC79-2-1
Operating Temperature - Junction: 150°C (Max)
Part Status: Active
Voltage - DC Reverse (Vr) (Max): 40 V
Voltage - Forward (Vf) (Max) @ If: 750 mV @ 100 mA
Current - Reverse Leakage @ Vr: 2 µA @ 30 V
Grade: Automotive
Qualification: AEC-Q101
на замовлення 78000 шт:
термін постачання 21-31 дні (днів)
Кількість Ціна
3000+5.95 грн
6000+5.18 грн
9000+4.90 грн
15000+4.30 грн
21000+4.12 грн
30000+3.95 грн
75000+3.52 грн
Мінімальне замовлення: 3000
В кошику  од. на суму  грн.
BB85702VH7902XTSA1 BB837_BB857.pdf
BB85702VH7902XTSA1
Виробник: Infineon Technologies
Description: DIODE VARACTOR 30V SNGL PG-SC79
Packaging: Tape & Reel (TR)
Package / Case: SC-79, SOD-523
Mounting Type: Surface Mount
Diode Type: Single
Operating Temperature: -55°C ~ 150°C (TJ)
Capacitance @ Vr, F: 0.52pF @ 28V, 1MHz
Capacitance Ratio Condition: C1/C28
Supplier Device Package: PG-SC79-2-1
Voltage - Peak Reverse (Max): 30 V
Capacitance Ratio: 12.7
товару немає в наявності
В кошику  од. на суму  грн.
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