Продукція > INFINEON TECHNOLOGIES > Всі товари виробника INFINEON TECHNOLOGIES (129057) > Сторінка 256 з 2151
| Фото | Назва | Виробник | Інформація | Доступність | Ціна без ПДВ | ||||||||||||||
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BSL316CH6327XTSA1 | Infineon Technologies |
 Description: MOSFET N/P-CH 30V 1.4A TSOP6-6Packaging: Tape & Reel (TR) Package / Case: SOT-23-6 Thin, TSOT-23-6 Mounting Type: Surface Mount Configuration: N and P-Channel Complementary Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) Power - Max: 500mW Drain to Source Voltage (Vdss): 30V Current - Continuous Drain (Id) @ 25°C: 1.4A, 1.5A Input Capacitance (Ciss) (Max) @ Vds: 282pF @ 15V Rds On (Max) @ Id, Vgs: 160mOhm @ 1.4A, 10V Gate Charge (Qg) (Max) @ Vgs: 0.6nC @ 5V FET Feature: Logic Level Gate, 4.5V Drive Vgs(th) (Max) @ Id: 2V @ 3.7µA Supplier Device Package: PG-TSOP6-6 Grade: Automotive Part Status: Active Qualification: AEC-Q101 |
на замовлення 57000 шт: термін постачання 21-31 дні (днів) |
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BSL606SNH6327XTSA1 | Infineon Technologies |
Description: MOSFET N-CH 60V 4.5A TSOP-6 Packaging: Tape & Reel (TR) Package / Case: SOT-23-6 Thin, TSOT-23-6 Mounting Type: Surface Mount Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 4.5A (Ta) Rds On (Max) @ Id, Vgs: 60mOhm @ 4.5A, 10V Power Dissipation (Max): 2W (Ta) Vgs(th) (Max) @ Id: 2.3V @ 15µA Supplier Device Package: PG-TSOP6-6 Grade: Automotive Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 60 V Gate Charge (Qg) (Max) @ Vgs: 5.6 nC @ 5 V Input Capacitance (Ciss) (Max) @ Vds: 657 pF @ 25 V Qualification: AEC-Q101 |
товару немає в наявності |
Мінімальне замовлення: 3000 шт В кошику од. на суму грн. | ||||||||||||||
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BSL802SNH6327XTSA1 | Infineon Technologies |
Description: MOSFET N-CH 20V 7.5A TSOP-6 |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||||||||
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BSP125H6433XTMA1 | Infineon Technologies |
Description: MOSFET N-CH 600V 120MA SOT223-4 Packaging: Tape & Reel (TR) Package / Case: TO-261-4, TO-261AA Mounting Type: Surface Mount Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 120mA (Ta) Power Dissipation (Max): 1.8W (Ta) Vgs(th) (Max) @ Id: 2.3V @ 94µA Supplier Device Package: PG-SOT223-4 Grade: Automotive Part Status: Active Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 600 V Gate Charge (Qg) (Max) @ Vgs: 6.6 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 150 pF @ 25 V Qualification: AEC-Q101 |
на замовлення 8000 шт: термін постачання 21-31 дні (днів) |
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BSP129H6906XTSA1 | Infineon Technologies |
Description: MOSFET N-CH 240V 350MA SOT223-4 Packaging: Tape & Reel (TR) Package / Case: TO-261-4, TO-261AA Mounting Type: Surface Mount Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel, Depletion Mode Current - Continuous Drain (Id) @ 25°C: 350mA (Ta) Rds On (Max) @ Id, Vgs: 6Ohm @ 350mA, 10V Power Dissipation (Max): 1.8W (Ta) Vgs(th) (Max) @ Id: 1V @ 108µA Supplier Device Package: PG-SOT223-4 Grade: Automotive Part Status: Last Time Buy Drive Voltage (Max Rds On, Min Rds On): 0V, 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 240 V Gate Charge (Qg) (Max) @ Vgs: 5.7 nC @ 5 V Input Capacitance (Ciss) (Max) @ Vds: 108 pF @ 25 V Qualification: AEC-Q101 |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||||||||
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BSP135H6433XTMA1 | Infineon Technologies |
Description: MOSFET N-CH 600V 120MA SOT223 Packaging: Tape & Reel (TR) Package / Case: TO-261-4, TO-261AA Mounting Type: Surface Mount Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel, Depletion Mode Current - Continuous Drain (Id) @ 25°C: 120mA (Ta) Rds On (Max) @ Id, Vgs: 45Ohm @ 120mA, 10V Power Dissipation (Max): 1.8W (Ta) Vgs(th) (Max) @ Id: 1V @ 94µA Supplier Device Package: SOT-223 Grade: Automotive Part Status: Last Time Buy Drive Voltage (Max Rds On, Min Rds On): 0V, 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 600 V Gate Charge (Qg) (Max) @ Vgs: 4.9 nC @ 5 V Input Capacitance (Ciss) (Max) @ Vds: 146 pF @ 25 V Qualification: AEC-Q101 |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||||||||
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BSP135H6906XTSA1 | Infineon Technologies |
Description: MOSFET N-CH 600V 120MA SOT223-4 Packaging: Tape & Reel (TR) Package / Case: TO-261-4, TO-261AA Mounting Type: Surface Mount Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel, Depletion Mode Current - Continuous Drain (Id) @ 25°C: 120mA (Ta) Rds On (Max) @ Id, Vgs: 45Ohm @ 120mA, 10V Power Dissipation (Max): 1.8W (Ta) Vgs(th) (Max) @ Id: 1V @ 94µA Supplier Device Package: PG-SOT223-4 Grade: Automotive Part Status: Active Drive Voltage (Max Rds On, Min Rds On): 0V, 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 600 V Gate Charge (Qg) (Max) @ Vgs: 4.9 nC @ 5 V Input Capacitance (Ciss) (Max) @ Vds: 146 pF @ 25 V Qualification: AEC-Q101 |
товару немає в наявності |
Мінімальне замовлення: 1000 шт В кошику од. на суму грн. | ||||||||||||||
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BSP299H6327XUSA1 | Infineon Technologies |
Description: MOSFET N-CH 500V 400MA SOT223-4 Packaging: Tape & Reel (TR) Package / Case: TO-261-4, TO-261AA Mounting Type: Surface Mount Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 400mA (Ta) Rds On (Max) @ Id, Vgs: 4Ohm @ 400mA, 10V Power Dissipation (Max): 1.8W (Ta) Vgs(th) (Max) @ Id: 4V @ 1mA Supplier Device Package: PG-SOT223-4 Drive Voltage (Max Rds On, Min Rds On): 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 500 V Input Capacitance (Ciss) (Max) @ Vds: 400 pF @ 25 V |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||||||||
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BSP320SH6327XTSA1 | Infineon Technologies |
Description: MOSFET N-CH 60V 2.9A SOT223-4 Packaging: Tape & Reel (TR) Package / Case: TO-261-4, TO-261AA Mounting Type: Surface Mount Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 2.9A (Tj) Rds On (Max) @ Id, Vgs: 120mOhm @ 2.9A, 10V Power Dissipation (Max): 1.8W (Ta) Vgs(th) (Max) @ Id: 4V @ 20µA Supplier Device Package: PG-SOT223-4 Grade: Automotive Part Status: Last Time Buy Drive Voltage (Max Rds On, Min Rds On): 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 60 V Gate Charge (Qg) (Max) @ Vgs: 12 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 340 pF @ 25 V Qualification: AEC-Q101 |
товару немає в наявності |
Мінімальне замовлення: 1000 шт В кошику од. на суму грн. | ||||||||||||||
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BSP320SH6433XTMA1 | Infineon Technologies |
Description: MOSFET N-CH 60V 2.9A SOT223 Packaging: Tape & Reel (TR) Package / Case: TO-261-4, TO-261AA Mounting Type: Surface Mount Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 2.9A (Tj) Rds On (Max) @ Id, Vgs: 120mOhm @ 2.9A, 10V Power Dissipation (Max): 1.8W (Ta) Vgs(th) (Max) @ Id: 4V @ 20µA Supplier Device Package: SOT-223 Grade: Automotive Part Status: Last Time Buy Drive Voltage (Max Rds On, Min Rds On): 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 60 V Gate Charge (Qg) (Max) @ Vgs: 9.3 nC @ 7 V Input Capacitance (Ciss) (Max) @ Vds: 340 pF @ 25 V Qualification: AEC-Q101 |
товару немає в наявності |
Мінімальне замовлення: 4000 шт В кошику од. на суму грн. | ||||||||||||||
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BSP716NH6327XTSA1 | Infineon Technologies |
Description: MOSFET N-CH 75V 2.3A SOT223-4 Packaging: Tape & Reel (TR) Package / Case: TO-261-4, TO-261AA Mounting Type: Surface Mount Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 2.3A (Ta) Rds On (Max) @ Id, Vgs: 160mOhm @ 2.3A, 10V Power Dissipation (Max): 1.8W (Ta) Vgs(th) (Max) @ Id: 1.8V @ 218µA Supplier Device Package: PG-SOT223-4 Part Status: Obsolete Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 75 V Gate Charge (Qg) (Max) @ Vgs: 13.1 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 315 pF @ 25 V |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||||||||
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BSP88H6327XTSA1 | Infineon Technologies |
Description: MOSFET N-CH 240V 350MA SOT223-4 Packaging: Tape & Reel (TR) Package / Case: TO-261-4, TO-261AA Mounting Type: Surface Mount Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 350mA (Ta) Rds On (Max) @ Id, Vgs: 6Ohm @ 350mA, 10V Power Dissipation (Max): 1.8W (Ta) Vgs(th) (Max) @ Id: 1.4V @ 108µA Supplier Device Package: PG-SOT223-4 Grade: Automotive Part Status: Active Drive Voltage (Max Rds On, Min Rds On): 2.8V, 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 240 V Gate Charge (Qg) (Max) @ Vgs: 6.8 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 95 pF @ 25 V Qualification: AEC-Q101 |
на замовлення 25000 шт: термін постачання 21-31 дні (днів) |
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BSP92PH6327XTSA1 | Infineon Technologies |
Description: MOSFET P-CH 250V 260MA SOT223-4 Packaging: Tape & Reel (TR) Package / Case: TO-261-4, TO-261AA Mounting Type: Surface Mount Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: P-Channel Current - Continuous Drain (Id) @ 25°C: 260mA (Ta) Rds On (Max) @ Id, Vgs: 12Ohm @ 260mA, 10V Power Dissipation (Max): 1.8W (Ta) Vgs(th) (Max) @ Id: 2V @ 130µA Supplier Device Package: PG-SOT223-4 Grade: Automotive Drive Voltage (Max Rds On, Min Rds On): 2.8V, 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 250 V Gate Charge (Qg) (Max) @ Vgs: 5.4 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 104 pF @ 25 V Qualification: AEC-Q101 |
на замовлення 10000 шт: термін постачання 21-31 дні (днів) |
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BSS119NH6433XTMA1 | Infineon Technologies |
Description: MOSFET N-CH 100V 190MA SOT23-3 |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||||||||
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BSS138WH6433XTMA1 | Infineon Technologies |
Description: MOSFET N-CH 60V 280MA SOT323-3 Packaging: Tape & Reel (TR) Package / Case: SC-70, SOT-323 Mounting Type: Surface Mount Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 280mA (Ta) Rds On (Max) @ Id, Vgs: 3.5Ohm @ 200mA, 10V Power Dissipation (Max): 500mW (Ta) Vgs(th) (Max) @ Id: 1.4V @ 26µA Supplier Device Package: PG-SOT323 Grade: Automotive Part Status: Active Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 60 V Gate Charge (Qg) (Max) @ Vgs: 1.5 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 43 pF @ 25 V Qualification: AEC-Q101 |
товару немає в наявності |
Мінімальне замовлення: 10000 шт В кошику од. на суму грн. | ||||||||||||||
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BSS139H6906XTSA1 | Infineon Technologies |
Description: MOSFET N-CH 250V 100MA SOT23-3 Packaging: Tape & Reel (TR) Package / Case: TO-236-3, SC-59, SOT-23-3 Mounting Type: Surface Mount Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel, Depletion Mode Current - Continuous Drain (Id) @ 25°C: 100mA (Ta) Rds On (Max) @ Id, Vgs: 14Ohm @ 100mA, 10V Power Dissipation (Max): 360mW (Ta) Vgs(th) (Max) @ Id: 1V @ 56µA Supplier Device Package: PG-SOT23-3-5 Grade: Automotive Part Status: Last Time Buy Drive Voltage (Max Rds On, Min Rds On): 0V, 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 250 V Gate Charge (Qg) (Max) @ Vgs: 3.5 nC @ 5 V Input Capacitance (Ciss) (Max) @ Vds: 76 pF @ 25 V Qualification: AEC-Q101 |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||||||||
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BSS169H6906XTSA1 | Infineon Technologies |
Description: MOSFET N-CH 100V 170MA SOT23-3 Packaging: Tape & Reel (TR) Package / Case: TO-236-3, SC-59, SOT-23-3 Mounting Type: Surface Mount Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel, Depletion Mode Current - Continuous Drain (Id) @ 25°C: 170mA (Ta) Rds On (Max) @ Id, Vgs: 6Ohm @ 170mA, 10V Power Dissipation (Max): 360mW (Ta) Vgs(th) (Max) @ Id: 1.8V @ 50µA Supplier Device Package: PG-SOT23 Grade: Automotive Part Status: Not For New Designs Drive Voltage (Max Rds On, Min Rds On): 0V, 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 100 V Gate Charge (Qg) (Max) @ Vgs: 2.8 nC @ 7 V Input Capacitance (Ciss) (Max) @ Vds: 68 pF @ 10 V Qualification: AEC-Q101 |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||||||||
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BSS192PH6327XTSA1 | Infineon Technologies |
Description: MOSFET P-CH 250V 190MA SOT89 Packaging: Tape & Reel (TR) Package / Case: TO-243AA Mounting Type: Surface Mount Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: P-Channel Current - Continuous Drain (Id) @ 25°C: 190mA (Ta) Rds On (Max) @ Id, Vgs: 12Ohm @ 190mA, 10V Power Dissipation (Max): 1W (Ta) Vgs(th) (Max) @ Id: 2V @ 130µA Supplier Device Package: PG-SOT89 Grade: Automotive Part Status: Active Drive Voltage (Max Rds On, Min Rds On): 2.8V, 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 250 V Gate Charge (Qg) (Max) @ Vgs: 6.1 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 104 pF @ 25 V Qualification: AEC-Q101 |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||||||||
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BSS214NWH6327XTSA1 | Infineon Technologies |
Description: MOSFET N-CH 20V 1.5A SOT323-3 Packaging: Tape & Reel (TR) Package / Case: SC-70, SOT-323 Mounting Type: Surface Mount Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 1.5A (Ta) Rds On (Max) @ Id, Vgs: 140mOhm @ 1.5A, 4.5V Power Dissipation (Max): 500mW (Ta) Vgs(th) (Max) @ Id: 1.2V @ 3.7µA Supplier Device Package: PG-SOT323 Grade: Automotive Part Status: Active Drive Voltage (Max Rds On, Min Rds On): 2.5V, 4.5V Vgs (Max): ±12V Drain to Source Voltage (Vdss): 20 V Gate Charge (Qg) (Max) @ Vgs: 0.8 nC @ 5 V Input Capacitance (Ciss) (Max) @ Vds: 143 pF @ 10 V Qualification: AEC-Q101 |
на замовлення 21000 шт: термін постачання 21-31 дні (днів) |
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BSS225H6327XTSA1 | Infineon Technologies |
Description: MOSFET N-CH 600V 90MA SOT89 Packaging: Tape & Reel (TR) Package / Case: TO-243AA Mounting Type: Surface Mount Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 90mA (Ta) Rds On (Max) @ Id, Vgs: 45Ohm @ 90mA, 10V Power Dissipation (Max): 1W (Ta) Vgs(th) (Max) @ Id: 2.3V @ 94µA Supplier Device Package: PG-SOT89 Grade: Automotive Part Status: Active Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 600 V Gate Charge (Qg) (Max) @ Vgs: 5.8 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 131 pF @ 25 V Qualification: AEC-Q101 |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||||||||
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BSS606NH6327XTSA1 | Infineon Technologies |
Description: MOSFET N-CH 60V 3.2A SOT89 Packaging: Tape & Reel (TR) Package / Case: TO-243AA Mounting Type: Surface Mount Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 3.2A (Ta) Rds On (Max) @ Id, Vgs: 60mOhm @ 3.2A, 10V Power Dissipation (Max): 1W (Ta) Vgs(th) (Max) @ Id: 2.3V @ 15µA Supplier Device Package: PG-SOT89 Grade: Automotive Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 60 V Gate Charge (Qg) (Max) @ Vgs: 5.6 nC @ 5 V Input Capacitance (Ciss) (Max) @ Vds: 657 pF @ 25 V Qualification: AEC-Q101 |
на замовлення 2000 шт: термін постачання 21-31 дні (днів) |
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BSS806NEH6327XTSA1 | Infineon Technologies |
Description: MOSFET N-CH 20V 2.3A SOT23-3 Packaging: Tape & Reel (TR) Package / Case: TO-236-3, SC-59, SOT-23-3 Mounting Type: Surface Mount Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 2.3A (Ta) Rds On (Max) @ Id, Vgs: 57mOhm @ 2.3A, 2.5V Power Dissipation (Max): 500mW (Ta) Vgs(th) (Max) @ Id: 750mV @ 11µA Supplier Device Package: PG-SOT23 Grade: Automotive Part Status: Active Drive Voltage (Max Rds On, Min Rds On): 1.8V, 2.5V Vgs (Max): ±8V Drain to Source Voltage (Vdss): 20 V Gate Charge (Qg) (Max) @ Vgs: 1.7 nC @ 2.5 V Input Capacitance (Ciss) (Max) @ Vds: 529 pF @ 10 V Qualification: AEC-Q101 |
на замовлення 90000 шт: термін постачання 21-31 дні (днів) |
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BSS816NWH6327XTSA1 | Infineon Technologies |
Description: MOSFET N-CH 20V 1.4A SOT323-3 Packaging: Tape & Reel (TR) Package / Case: SC-70, SOT-323 Mounting Type: Surface Mount Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 1.4A (Ta) Rds On (Max) @ Id, Vgs: 160mOhm @ 1.4A, 2.5V Power Dissipation (Max): 500mW (Ta) Vgs(th) (Max) @ Id: 750mV @ 3.7µA Supplier Device Package: PG-SOT323 Grade: Automotive Part Status: Active Drive Voltage (Max Rds On, Min Rds On): 1.8V, 2.5V Vgs (Max): ±8V Drain to Source Voltage (Vdss): 20 V Gate Charge (Qg) (Max) @ Vgs: 0.6 nC @ 2.5 V Input Capacitance (Ciss) (Max) @ Vds: 180 pF @ 10 V Qualification: AEC-Q101 |
на замовлення 456000 шт: термін постачання 21-31 дні (днів) |
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BSS87H6327FTSA1 | Infineon Technologies |
Description: MOSFET N-CH 240V 260MA SOT89-4 Packaging: Tape & Reel (TR) Package / Case: TO-243AA Mounting Type: Surface Mount Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 260mA (Ta) Rds On (Max) @ Id, Vgs: 6Ohm @ 260mA, 10V Power Dissipation (Max): 1W (Ta) Vgs(th) (Max) @ Id: 1.8V @ 108µA Supplier Device Package: PG-SOT89-4-2 Grade: Automotive Part Status: Active Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 240 V Gate Charge (Qg) (Max) @ Vgs: 5.5 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 97 pF @ 25 V Qualification: AEC-Q101 |
на замовлення 9000 шт: термін постачання 21-31 дні (днів) |
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BSS87H6327XTSA1 | Infineon Technologies |
Description: MOSFET N-CH 240V 260MA SOT89-4 Packaging: Tape & Reel (TR) Package / Case: TO-243AA Mounting Type: Surface Mount Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 260mA (Ta) Rds On (Max) @ Id, Vgs: 6Ohm @ 260mA, 10V Power Dissipation (Max): 1W (Ta) Vgs(th) (Max) @ Id: 1.8V @ 108µA Supplier Device Package: PG-SOT89-4-2 Grade: Automotive Part Status: Not For New Designs Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 240 V Gate Charge (Qg) (Max) @ Vgs: 5.5 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 97 pF @ 25 V Qualification: AEC-Q101 |
товару немає в наявності |
Мінімальне замовлення: 1000 шт В кошику од. на суму грн. | ||||||||||||||
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BSZ014NE2LS5IFATMA1 | Infineon Technologies |
Description: MOSFET N-CH 25V 31A/40A TSDSON Packaging: Tape & Reel (TR) Package / Case: 8-PowerTDFN Mounting Type: Surface Mount Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 31A (Ta), 40A (Tc) Rds On (Max) @ Id, Vgs: 1.45mOhm @ 20A, 10V FET Feature: Schottky Diode (Body) Power Dissipation (Max): 2.1W (Ta), 69W (Tc) Vgs(th) (Max) @ Id: 2V @ 250µA Supplier Device Package: PG-TSDSON-8-FL Part Status: Active Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Vgs (Max): ±16V Drain to Source Voltage (Vdss): 25 V Gate Charge (Qg) (Max) @ Vgs: 33 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 2300 pF @ 12 V |
товару немає в наявності |
Мінімальне замовлення: 5000 шт В кошику од. на суму грн. | ||||||||||||||
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BSZ034N04LSATMA1 | Infineon Technologies |
Description: MOSFET N-CH 40V 19A/40A TSDSON Packaging: Tape & Reel (TR) Package / Case: 8-PowerTDFN Mounting Type: Surface Mount Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 19A (Ta), 40A (Tc) Rds On (Max) @ Id, Vgs: 3.4mOhm @ 20A, 10V Power Dissipation (Max): 2.1W (Ta), 52W (Tc) Vgs(th) (Max) @ Id: 2V @ 250µA Supplier Device Package: PG-TSDSON-8-FL Grade: Automotive Part Status: Active Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 40 V Gate Charge (Qg) (Max) @ Vgs: 25 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 1800 pF @ 20 V Qualification: AEC-Q101 |
товару немає в наявності |
Мінімальне замовлення: 5000 шт В кошику од. на суму грн. | ||||||||||||||
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BSZ0506NSATMA1 | Infineon Technologies |
Description: MOSFET N-CH 30V 15A/40A TSDSON Packaging: Tape & Reel (TR) Package / Case: 8-PowerTDFN Mounting Type: Surface Mount Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 15A (Ta), 40A (Tc) Rds On (Max) @ Id, Vgs: 4.4mOhm @ 20A, 10V Power Dissipation (Max): 2.1W (Ta), 27W (Tc) Vgs(th) (Max) @ Id: 2V @ 250µA Supplier Device Package: PG-TSDSON-8-FL Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 30 V Gate Charge (Qg) (Max) @ Vgs: 15 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 950 pF @ 15 V |
на замовлення 5000 шт: термін постачання 21-31 дні (днів) |
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BSZ068N06NSATMA1 | Infineon Technologies |
Description: MOSFET N-CH 60V 40A TSDSON Packaging: Tape & Reel (TR) Package / Case: 8-PowerTDFN Mounting Type: Surface Mount Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 40A (Tc) Rds On (Max) @ Id, Vgs: 6.8mOhm @ 20A, 10V Power Dissipation (Max): 2.1W (Ta), 46W (Tc) Vgs(th) (Max) @ Id: 3.3V @ 20µA Supplier Device Package: PG-TSDSON-8-FL Part Status: Active Drive Voltage (Max Rds On, Min Rds On): 6V, 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 60 V Gate Charge (Qg) (Max) @ Vgs: 21 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 1500 pF @ 30 V |
товару немає в наявності |
Мінімальне замовлення: 5000 шт В кошику од. на суму грн. | ||||||||||||||
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BSZ075N08NS5ATMA1 | Infineon Technologies |
Description: MOSFET N-CH 80V 40A 8TSDSON Packaging: Tape & Reel (TR) Package / Case: 8-PowerTDFN Mounting Type: Surface Mount Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 40A (Tc) Rds On (Max) @ Id, Vgs: 7.5mOhm @ 20A, 10V Power Dissipation (Max): 69W (Tc) Vgs(th) (Max) @ Id: 3.8V @ 36µA Supplier Device Package: PG-TSDSON-8-26 Part Status: Active Drive Voltage (Max Rds On, Min Rds On): 6V, 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 80 V Gate Charge (Qg) (Max) @ Vgs: 29.5 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 2080 pF @ 40 V |
товару немає в наявності |
Мінімальне замовлення: 5000 шт В кошику од. на суму грн. | ||||||||||||||
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BSZ100N06NSATMA1 | Infineon Technologies |
Description: MOSFET N-CH 60V 40A TSDSON Packaging: Tape & Reel (TR) Package / Case: 8-PowerTDFN Mounting Type: Surface Mount Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 40A (Tc) Rds On (Max) @ Id, Vgs: 10mOhm @ 20A, 10V Power Dissipation (Max): 2.1W (Ta), 36W (Tc) Vgs(th) (Max) @ Id: 3.3V @ 14µA Supplier Device Package: PG-TSDSON-8-FL Part Status: Active Drive Voltage (Max Rds On, Min Rds On): 6V, 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 60 V Gate Charge (Qg) (Max) @ Vgs: 15 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 1075 pF @ 30 V |
товару немає в наявності |
Мінімальне замовлення: 5000 шт В кошику од. на суму грн. | ||||||||||||||
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BSZ150N10LS3GATMA1 | Infineon Technologies |
Description: MOSFET N-CH 100V 40A 8TSDSON Packaging: Tape & Reel (TR) Package / Case: 8-PowerTDFN Mounting Type: Surface Mount Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 40A (Tc) Rds On (Max) @ Id, Vgs: 15mOhm @ 20A, 10V Power Dissipation (Max): 2.1W (Ta), 63W (Tc) Vgs(th) (Max) @ Id: 2.1V @ 33µA Supplier Device Package: PG-TSDSON-8 Part Status: Active Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 100 V Gate Charge (Qg) (Max) @ Vgs: 35 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 2500 pF @ 50 V |
на замовлення 5000 шт: термін постачання 21-31 дні (днів) |
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BSZ15DC02KDHXTMA1 | Infineon Technologies |
Description: MOSFET N/P-CH 20V 5.1A 8TSDSON Packaging: Tape & Reel (TR) Package / Case: 8-PowerTDFN Mounting Type: Surface Mount Configuration: N and P-Channel Complementary Operating Temperature: -55°C ~ 175°C (TJ) Technology: MOSFET (Metal Oxide) Power - Max: 2.5W Drain to Source Voltage (Vdss): 20V Current - Continuous Drain (Id) @ 25°C: 5.1A, 3.2A Input Capacitance (Ciss) (Max) @ Vds: 419pF @ 10V Rds On (Max) @ Id, Vgs: 55mOhm @ 5.1A, 4.5V Gate Charge (Qg) (Max) @ Vgs: 2.8nC @ 4.5V FET Feature: Logic Level Gate, 2.5V Drive Vgs(th) (Max) @ Id: 1.4V @ 110µA Supplier Device Package: PG-TSDSON-8-FL Grade: Automotive Part Status: Active Qualification: AEC-Q101 |
на замовлення 10000 шт: термін постачання 21-31 дні (днів) |
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BSZ215CHXTMA1 | Infineon Technologies |
Description: MOSFET N/P-CH 20V 5.1A 8TSDSON Packaging: Tape & Reel (TR) Package / Case: 8-PowerTDFN Mounting Type: Surface Mount Configuration: N and P-Channel Complementary Operating Temperature: -55°C ~ 175°C (TJ) Technology: MOSFET (Metal Oxide) Power - Max: 2.5W Drain to Source Voltage (Vdss): 20V Current - Continuous Drain (Id) @ 25°C: 5.1A, 3.2A Input Capacitance (Ciss) (Max) @ Vds: 419pF @ 10V Rds On (Max) @ Id, Vgs: 55mOhm @ 5.1A, 4.5V Gate Charge (Qg) (Max) @ Vgs: 2.8nC @ 4.5V FET Feature: Logic Level Gate, 2.5V Drive Vgs(th) (Max) @ Id: 1.4V @ 110µA Supplier Device Package: PG-TSDSON-8 Grade: Automotive Part Status: Active Qualification: AEC-Q101 |
товару немає в наявності |
Мінімальне замовлення: 5000 шт В кошику од. на суму грн. | ||||||||||||||
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BTC300101TAAATMA1 | Infineon Technologies |
Description: IC PWR SWITCH N-CHAN 1:1 TO263-7 Packaging: Tape & Reel (TR) Package / Case: TO-263-7, D2PAK (6 Leads + Tab) Output Type: N-Channel Mounting Type: Surface Mount Number of Outputs: 1 Interface: On/Off Switch Type: General Purpose Operating Temperature: -40°C ~ 150°C (TJ) Output Configuration: High Side Input Type: Non-Inverting Voltage - Load: 5V ~ 28V Voltage - Supply (Vcc/Vdd): Not Required Current - Output (Max): 30A Ratio - Input:Output: 1:1 Supplier Device Package: PG-TO263-7-8 Grade: Automotive Part Status: Obsolete |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||||||||
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BTC500101TAAATMA1 | Infineon Technologies |
Description: IC PWR SWITCH N-CHAN 1:1 TO263-7 Packaging: Tape & Reel (TR) Package / Case: TO-263-7, D2PAK (6 Leads + Tab) Output Type: N-Channel Mounting Type: Surface Mount Number of Outputs: 1 Interface: Parallel Switch Type: General Purpose Operating Temperature: -40°C ~ 150°C (TJ) Output Configuration: High Side Input Type: Non-Inverting Voltage - Load: 5V ~ 28V Voltage - Supply (Vcc/Vdd): Not Required Current - Output (Max): 30A Ratio - Input:Output: 1:1 Supplier Device Package: PG-TO263-7-8 Grade: Automotive |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||||||||
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BTS500151TAAATMA1 | Infineon Technologies |
Description: IC PWR SWITCH N-CHAN 1:1 TO263-7 Packaging: Tape & Reel (TR) Package / Case: TO-263-7, D2PAK (6 Leads + Tab) Output Type: N-Channel Mounting Type: Surface Mount Number of Outputs: 1 Interface: On/Off Switch Type: General Purpose Operating Temperature: -40°C ~ 150°C (TJ) Output Configuration: High Side Input Type: Non-Inverting Voltage - Load: 5.5V ~ 28V Voltage - Supply (Vcc/Vdd): Not Required Current - Output (Max): 33A Ratio - Input:Output: 1:1 Supplier Device Package: PG-TO263-7-8 Fault Protection: Current Limiting (Fixed), Over Temperature, Over Voltage Grade: Automotive Qualification: AEC-Q100 |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||||||||
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BTS500151TMAAKSA1 | Infineon Technologies |
Description: IC PWR SWITCH N-CHAN 1:1 TO220-7 Packaging: Tube Package / Case: TO-220-7 Formed Leads Output Type: N-Channel Mounting Type: Through Hole Number of Outputs: 1 Interface: On/Off Switch Type: General Purpose Operating Temperature: -40°C ~ 150°C (TJ) Output Configuration: High Side Input Type: Non-Inverting Voltage - Load: 5.5V ~ 28V Voltage - Supply (Vcc/Vdd): Not Required Current - Output (Max): 33A Ratio - Input:Output: 1:1 Supplier Device Package: PG-TO220-7-232 Fault Protection: Current Limiting (Fixed), Over Temperature, Over Voltage Grade: Automotive Qualification: AEC-Q100 |
товару немає в наявності |
Мінімальне замовлення: 500 шт В кошику од. на суму грн. | ||||||||||||||
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BTS500402SFAXUMA1 | Infineon Technologies |
Description: IC PWR SWITCH N-CHAN 1:1 DSO-36 Features: Slew Rate Controlled Packaging: Tape & Reel (TR) Package / Case: 36-BSSOP (0.295", 7.50mm Width) Output Type: N-Channel Mounting Type: Surface Mount Number of Outputs: 2 Interface: Parallel Switch Type: General Purpose Operating Temperature: -40°C ~ 150°C (TJ) Output Configuration: High Side Rds On (Typ): 4mOhm Input Type: Non-Inverting Voltage - Load: 6V ~ 28V Voltage - Supply (Vcc/Vdd): 4.5V ~ 5.5V Current - Output (Max): 11A Ratio - Input:Output: 1:1 Supplier Device Package: PG-DSO-36-44 Fault Protection: Over Temperature, Over Voltage, Short Circuit Part Status: Obsolete |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||||||||
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BTS50081EKBXUMA1 | Infineon Technologies |
Description: IC PWR SWITCH N-CHAN 1:1 DSO-14 Packaging: Tape & Reel (TR) Package / Case: 14-SOIC (0.154", 3.90mm Width) Exposed Pad Output Type: N-Channel Mounting Type: Surface Mount Number of Outputs: 1 Interface: On/Off Switch Type: General Purpose Operating Temperature: -40°C ~ 150°C (TJ) Output Configuration: High Side Rds On (Typ): 8mOhm Input Type: Non-Inverting Voltage - Load: 5V ~ 28V Voltage - Supply (Vcc/Vdd): Not Required Current - Output (Max): 11A Ratio - Input:Output: 1:1 Supplier Device Package: PG-DSO-14-47-EP Fault Protection: Open Load Detect, Over Temperature, Over Voltage |
товару немає в наявності |
Мінімальне замовлення: 2500 шт В кошику од. на суму грн. | ||||||||||||||
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BTS50101EKBXUMA1 | Infineon Technologies |
Description: IC PWR SWITCH N-CHAN 1:1 DSO-14 Packaging: Tape & Reel (TR) Package / Case: 14-SOIC (0.154", 3.90mm Width) Exposed Pad Output Type: N-Channel Mounting Type: Surface Mount Number of Outputs: 1 Interface: On/Off Switch Type: General Purpose Operating Temperature: -40°C ~ 150°C (TJ) Output Configuration: High Side Rds On (Typ): 10mOhm Input Type: Non-Inverting Voltage - Load: 5V ~ 28V Voltage - Supply (Vcc/Vdd): Not Required Current - Output (Max): 10A Ratio - Input:Output: 1:1 Supplier Device Package: PG-DSO-14-47-EP Fault Protection: Current Limiting (Fixed), Open Load Detect, Over Temperature, Over Voltage Part Status: Active |
товару немає в наявності |
Мінімальне замовлення: 2500 шт В кошику од. на суму грн. | ||||||||||||||
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BTS50121EKBXUMA1 | Infineon Technologies |
Description: IC PWR SWITCH N-CHAN 1:1 DSO-14 Packaging: Tape & Reel (TR) Package / Case: 14-SOIC (0.154", 3.90mm Width) Exposed Pad Output Type: N-Channel Mounting Type: Surface Mount Number of Outputs: 1 Interface: On/Off Switch Type: General Purpose Operating Temperature: -40°C ~ 150°C (TJ) Output Configuration: High Side Rds On (Typ): 12mOhm Input Type: Non-Inverting Voltage - Load: 5V ~ 28V Voltage - Supply (Vcc/Vdd): Not Required Current - Output (Max): 10A Ratio - Input:Output: 1:1 Supplier Device Package: PG-DSO-14-47-EP Fault Protection: Current Limiting (Fixed), Open Load Detect, Over Temperature, Over Voltage Part Status: Active |
товару немає в наявності |
Мінімальне замовлення: 2500 шт В кошику од. на суму грн. | ||||||||||||||
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BTS50161EKBXUMA1 | Infineon Technologies |
Description: IC PWR SWITCH N-CHAN 1:1 DSO-14 Packaging: Tape & Reel (TR) Package / Case: 14-SOIC (0.154", 3.90mm Width) Exposed Pad Output Type: N-Channel Mounting Type: Surface Mount Number of Outputs: 1 Interface: On/Off Switch Type: General Purpose Operating Temperature: -40°C ~ 150°C (TJ) Output Configuration: High Side Rds On (Typ): 16mOhm Input Type: Non-Inverting Voltage - Load: 5V ~ 28V Voltage - Supply (Vcc/Vdd): Not Required Current - Output (Max): 8A Ratio - Input:Output: 1:1 Supplier Device Package: PG-DSO-14-47-EP Fault Protection: Current Limiting (Fixed), Open Load Detect, Over Temperature, Over Voltage |
товару немає в наявності |
Мінімальне замовлення: 2500 шт В кошику од. на суму грн. | ||||||||||||||
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BTS54040LBEAUMA1 | Infineon Technologies |
Description: IC PWR SWITCH N-CHAN 1:2 TSON-24 |
товару немає в наявності |
Мінімальне замовлення: 2500 шт В кошику од. на суму грн. | ||||||||||||||
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BTS54040LBFAUMA1 | Infineon Technologies |
Description: IC PWR SWITCH N-CHAN 1:2 TSON-24 Packaging: Tape & Reel (TR) Package / Case: 24-PowerTDFN Output Type: N-Channel Mounting Type: Surface Mount Number of Outputs: 4 Interface: SPI Switch Type: General Purpose Operating Temperature: -40°C ~ 150°C (TJ) Output Configuration: High Side Rds On (Typ): 39mOhm Voltage - Load: 5.5V ~ 28V Voltage - Supply (Vcc/Vdd): 3.8V ~ 5.5V Current - Output (Max): 2A Ratio - Input:Output: 1:2 Supplier Device Package: PG-TSON-24-3 Fault Protection: Current Limiting (Fixed), Over Temperature, Over Voltage Grade: Automotive Part Status: Discontinued at Digi-Key |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||||||||
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BTS54220LBBAUMA1 | Infineon Technologies |
Description: IC PWR SWITCH N-CHAN 1:1 TSON-24 Packaging: Tape & Reel (TR) Package / Case: 24-PowerTDFN Output Type: N-Channel Mounting Type: Surface Mount Number of Outputs: 4 Interface: SPI Switch Type: General Purpose Operating Temperature: -40°C ~ 150°C (TJ) Output Configuration: High Side Rds On (Typ): 9mOhm Voltage - Load: 5.5V ~ 28V Voltage - Supply (Vcc/Vdd): 3.8V ~ 5.5V Current - Output (Max): 5A Ratio - Input:Output: 1:1 Supplier Device Package: PG-TSON-24-3 Fault Protection: Current Limiting (Fixed), Over Temperature, Over Voltage Grade: Automotive Part Status: Discontinued at Digi-Key |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||||||||
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BUZ31H3046XKSA1 | Infineon Technologies |
Description: MOSFET N-CH 200V 14.5A TO262-3 Packaging: Tube Package / Case: TO-262-3 Long Leads, I2PAK, TO-262AA Mounting Type: Through Hole Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 14.5A (Tc) Rds On (Max) @ Id, Vgs: 200mOhm @ 9A, 5V Power Dissipation (Max): 95W (Tc) Vgs(th) (Max) @ Id: 4V @ 1mA Supplier Device Package: PG-TO262-3-1 Part Status: Obsolete Drive Voltage (Max Rds On, Min Rds On): 5V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 200 V Input Capacitance (Ciss) (Max) @ Vds: 1120 pF @ 25 V |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||||||||
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ESD205B102ELE6327XTMA1 | Infineon Technologies |
Description: TVS DIODE 5.5VWM 9V PGTSLP219 Packaging: Tape & Reel (TR) Package / Case: 0402 (1006 Metric) Mounting Type: Surface Mount Type: Zener Operating Temperature: -55°C ~ 125°C (TJ) Applications: General Purpose Capacitance @ Frequency: 5pF @ 1MHz Current - Peak Pulse (10/1000µs): 2.5A (8/20µs) Voltage - Reverse Standoff (Typ): 5.5V (Max) Supplier Device Package: PG-TSLP-2-19 Bidirectional Channels: 1 Voltage - Breakdown (Min): 6V Voltage - Clamping (Max) @ Ipp: 9V (Typ) Power - Peak Pulse: 30W Power Line Protection: No Part Status: Not For New Designs |
товару немає в наявності |
Мінімальне замовлення: 15000 шт В кошику од. на суму грн. | ||||||||||||||
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ESD218B102ELE6327XTMA1 | Infineon Technologies |
Description: TVS DIODE 24VWM 44.5VC PGTSLP220 Packaging: Tape & Reel (TR) Package / Case: 0402 (1006 Metric) Mounting Type: Surface Mount Type: Zener Operating Temperature: -55°C ~ 150°C (TJ) Applications: General Purpose Capacitance @ Frequency: 3pF @ 1MHz Current - Peak Pulse (10/1000µs): 1.5A (8/20µs) Voltage - Reverse Standoff (Typ): 24V (Max) Supplier Device Package: PG-TSLP-2-20 Bidirectional Channels: 1 Voltage - Breakdown (Min): 24.3V Voltage - Clamping (Max) @ Ipp: 44.5V Power - Peak Pulse: 67W Power Line Protection: No Part Status: Obsolete |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||||||||
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ICE2QR1065ZXKLA1 | Infineon Technologies |
Description: IC OFFLINE SWITCH FLYBACK 7DIP Packaging: Tube Package / Case: 8-DIP (0.300", 7.62mm), 7 Leads Mounting Type: Through Hole Operating Temperature: -40°C ~ 150°C (TJ) Duty Cycle: 50% Frequency - Switching: 52kHz Internal Switch(s): Yes Voltage - Breakdown: 650V Output Isolation: Isolated Topology: Flyback Voltage - Supply (Vcc/Vdd): 10.5V ~ 27V Supplier Device Package: PG-DIP-7-1 Fault Protection: Current Limiting, Over Load, Over Temperature, Over Voltage Voltage - Start Up: 18 V Part Status: Obsolete Power (Watts): 41 W |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||||||||
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ICE2QR4765ZXKLA1 | Infineon Technologies |
Description: IC OFFLINE SWITCH FLYBACK 7DIP Packaging: Tube Package / Case: 8-DIP (0.300", 7.62mm), 7 Leads Mounting Type: Through Hole Operating Temperature: -40°C ~ 150°C (TJ) Duty Cycle: 50% Frequency - Switching: 52kHz Internal Switch(s): Yes Voltage - Breakdown: 650V Output Isolation: Isolated Topology: Flyback Voltage - Supply (Vcc/Vdd): 10.5V ~ 27V Supplier Device Package: PG-DIP-7-1 Fault Protection: Current Limiting, Over Load, Over Temperature, Over Voltage Voltage - Start Up: 18 V Part Status: Active Power (Watts): 31 W |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||||||||
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ICE2QR4780ZXKLA1 | Infineon Technologies |
Description: IC OFFLINE SWITCH FLYBACK 7DIP Packaging: Tube Package / Case: 8-DIP (0.300", 7.62mm), 7 Leads Mounting Type: Through Hole Operating Temperature: -40°C ~ 150°C (TJ) Duty Cycle: 50% Frequency - Switching: 52kHz Internal Switch(s): Yes Voltage - Breakdown: 800V Output Isolation: Isolated Topology: Flyback Voltage - Supply (Vcc/Vdd): 10.5V ~ 27V Supplier Device Package: PG-DIP-7-1 Fault Protection: Current Limiting, Over Load, Over Temperature, Over Voltage Voltage - Start Up: 18 V Part Status: Obsolete Power (Watts): 39 W |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||||||||
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ICE3AR0680VJZXKLA1 | Infineon Technologies |
Description: IC OFFLINE SWITCH FLYBACK 7DIP Packaging: Tube Package / Case: 8-DIP (0.300", 7.62mm), 7 Leads Mounting Type: Through Hole Operating Temperature: -40°C ~ 150°C (TJ) Duty Cycle: 75% Frequency - Switching: 100kHz Internal Switch(s): Yes Voltage - Breakdown: 800V Output Isolation: Isolated Topology: Flyback Voltage - Supply (Vcc/Vdd): 10.5V ~ 27V Supplier Device Package: PG-DIP-7-1 Fault Protection: Over Load, Over Temperature, Over Voltage Voltage - Start Up: 17 V Part Status: Active Power (Watts): 82 W |
на замовлення 120 шт: термін постачання 21-31 дні (днів) |
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ICE3AR10080JZXKLA1 | Infineon Technologies |
Description: IC OFFLINE SWITCH FLYBACK 7DIP Packaging: Tube Package / Case: 8-DIP (0.300", 7.62mm), 7 Leads Mounting Type: Through Hole Operating Temperature: -40°C ~ 150°C (TJ) Duty Cycle: 75% Frequency - Switching: 100kHz Internal Switch(s): Yes Voltage - Breakdown: 800V Output Isolation: Isolated Topology: Flyback Voltage - Supply (Vcc/Vdd): 10.5V ~ 27V Supplier Device Package: PG-DIP-7-1 Fault Protection: Over Load, Over Temperature, Over Voltage Voltage - Start Up: 17 V Part Status: Active Power (Watts): 22 W |
на замовлення 678 шт: термін постачання 21-31 дні (днів) |
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ICE3AR4780CJZXKLA1 | Infineon Technologies |
Description: IC OFFLINE SWITCH FLYBACK 7DIP Packaging: Tube Package / Case: 8-DIP (0.300", 7.62mm), 7 Leads Mounting Type: Through Hole Operating Temperature: -40°C ~ 150°C (TJ) Duty Cycle: 75% Frequency - Switching: 100kHz Internal Switch(s): Yes Voltage - Breakdown: 800V Output Isolation: Isolated Topology: Flyback Voltage - Supply (Vcc/Vdd): 10.5V ~ 27V Supplier Device Package: PG-DIP-7-1 Fault Protection: Over Load, Over Temperature, Over Voltage Voltage - Start Up: 17 V Part Status: Active Power (Watts): 31 W |
товару немає в наявності |
Мінімальне замовлення: 2000 шт В кошику од. на суму грн. | ||||||||||||||
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ICE3BR0680JZXKLA1 | Infineon Technologies |
Description: IC OFFLINE SWITCH FLYBACK 7DIP Packaging: Tube Package / Case: 8-DIP (0.300", 7.62mm), 7 Leads Mounting Type: Through Hole Operating Temperature: -40°C ~ 150°C (TJ) Duty Cycle: 75% Frequency - Switching: 65kHz Internal Switch(s): Yes Voltage - Breakdown: 800V Output Isolation: Isolated Topology: Flyback Voltage - Supply (Vcc/Vdd): 10.5V ~ 27V Supplier Device Package: PG-DIP-7-1 Fault Protection: Over Load, Over Temperature, Over Voltage Voltage - Start Up: 17 V Part Status: Active Power (Watts): 82 W |
на замовлення 1837 шт: термін постачання 21-31 дні (днів) |
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ICE3BR4765JGXUMA1 | Infineon Technologies |
Description: IC OFFLINE SWITCH FLYBACK 12DSO Packaging: Tape & Reel (TR) Package / Case: 16-SOIC (0.154", 3.90mm Width), 12 Leads Mounting Type: Surface Mount Operating Temperature: -40°C ~ 150°C (TJ) Duty Cycle: 75% Frequency - Switching: 65kHz Internal Switch(s): Yes Voltage - Breakdown: 650V Output Isolation: Isolated Topology: Flyback Voltage - Supply (Vcc/Vdd): 10.5V ~ 27V Supplier Device Package: PG-DSO-12-10 Fault Protection: Current Limiting, Over Load, Over Temperature, Over Voltage Voltage - Start Up: 18 V Part Status: Not For New Designs Power (Watts): 24 W |
товару немає в наявності |
Мінімальне замовлення: 2500 шт В кошику од. на суму грн. | ||||||||||||||
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ICE3PCS02GXUMA1 | Infineon Technologies |
Description: IC PFC CCM PG-DSO-8 Packaging: Tape & Reel (TR) Package / Case: 8-SOIC (0.154", 3.90mm Width) Mounting Type: Surface Mount Operating Temperature: -25°C ~ 125°C Voltage - Supply: 11V ~ 25V Frequency - Switching: 21kHz ~ 100kHz Mode: Continuous Conduction (CCM) Supplier Device Package: PG-DSO-8 Part Status: Active Current - Startup: 380 µA |
на замовлення 12500 шт: термін постачання 21-31 дні (днів) |
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IDH02G120C5XKSA1 | Infineon Technologies |
Description: DIODE SIL CARB 1200V 2A PGTO2201 Packaging: Tube Package / Case: TO-220-2 Mounting Type: Through Hole Speed: Zero Recovery Time > 500mA (Io) Reverse Recovery Time (trr): 0 ns Technology: SiC (Silicon Carbide) Schottky Capacitance @ Vr, F: 182pF @ 1V, 1MHz Current - Average Rectified (Io): 2A Supplier Device Package: PG-TO220-2-1 Operating Temperature - Junction: 175°C (Max) Voltage - DC Reverse (Vr) (Max): 1200 V Voltage - Forward (Vf) (Max) @ If: 1.65 V @ 2 A Current - Reverse Leakage @ Vr: 18 µA @ 1200 V |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||||||||
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IDH02G65C5XKSA1 | Infineon Technologies |
Description: DIODE SIL CARB 650V 2A PGTO2201 Packaging: Tube Package / Case: TO-220-2 Mounting Type: Through Hole Speed: No Recovery Time > 500mA (Io) Reverse Recovery Time (trr): 0 ns Technology: SiC (Silicon Carbide) Schottky Capacitance @ Vr, F: 70pF @ 1V, 1MHz Current - Average Rectified (Io): 2A Supplier Device Package: PG-TO220-2-1 Operating Temperature - Junction: -55°C ~ 175°C Part Status: Discontinued at Digi-Key Voltage - DC Reverse (Vr) (Max): 650 V Voltage - Forward (Vf) (Max) @ If: 1.7 V @ 2 A Current - Reverse Leakage @ Vr: 35 µA @ 650 V |
товару немає в наявності |
В кошику од. на суму грн. |
| BSL316CH6327XTSA1 |
|
Виробник: Infineon Technologies
Description: MOSFET N/P-CH 30V 1.4A TSOP6-6
Packaging: Tape & Reel (TR)
Package / Case: SOT-23-6 Thin, TSOT-23-6
Mounting Type: Surface Mount
Configuration: N and P-Channel Complementary
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
Power - Max: 500mW
Drain to Source Voltage (Vdss): 30V
Current - Continuous Drain (Id) @ 25°C: 1.4A, 1.5A
Input Capacitance (Ciss) (Max) @ Vds: 282pF @ 15V
Rds On (Max) @ Id, Vgs: 160mOhm @ 1.4A, 10V
Gate Charge (Qg) (Max) @ Vgs: 0.6nC @ 5V
FET Feature: Logic Level Gate, 4.5V Drive
Vgs(th) (Max) @ Id: 2V @ 3.7µA
Supplier Device Package: PG-TSOP6-6
Grade: Automotive
Part Status: Active
Qualification: AEC-Q101
Description: MOSFET N/P-CH 30V 1.4A TSOP6-6
Packaging: Tape & Reel (TR)
Package / Case: SOT-23-6 Thin, TSOT-23-6
Mounting Type: Surface Mount
Configuration: N and P-Channel Complementary
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
Power - Max: 500mW
Drain to Source Voltage (Vdss): 30V
Current - Continuous Drain (Id) @ 25°C: 1.4A, 1.5A
Input Capacitance (Ciss) (Max) @ Vds: 282pF @ 15V
Rds On (Max) @ Id, Vgs: 160mOhm @ 1.4A, 10V
Gate Charge (Qg) (Max) @ Vgs: 0.6nC @ 5V
FET Feature: Logic Level Gate, 4.5V Drive
Vgs(th) (Max) @ Id: 2V @ 3.7µA
Supplier Device Package: PG-TSOP6-6
Grade: Automotive
Part Status: Active
Qualification: AEC-Q101
на замовлення 57000 шт:
термін постачання 21-31 дні (днів)
| Кількість | Ціна без ПДВ |
|---|---|
| 3000+ | 13.13 грн |
| 9000+ | 11.06 грн |
| BSL606SNH6327XTSA1 |
|
Виробник: Infineon Technologies
Description: MOSFET N-CH 60V 4.5A TSOP-6
Packaging: Tape & Reel (TR)
Package / Case: SOT-23-6 Thin, TSOT-23-6
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 4.5A (Ta)
Rds On (Max) @ Id, Vgs: 60mOhm @ 4.5A, 10V
Power Dissipation (Max): 2W (Ta)
Vgs(th) (Max) @ Id: 2.3V @ 15µA
Supplier Device Package: PG-TSOP6-6
Grade: Automotive
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 60 V
Gate Charge (Qg) (Max) @ Vgs: 5.6 nC @ 5 V
Input Capacitance (Ciss) (Max) @ Vds: 657 pF @ 25 V
Qualification: AEC-Q101
Description: MOSFET N-CH 60V 4.5A TSOP-6
Packaging: Tape & Reel (TR)
Package / Case: SOT-23-6 Thin, TSOT-23-6
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 4.5A (Ta)
Rds On (Max) @ Id, Vgs: 60mOhm @ 4.5A, 10V
Power Dissipation (Max): 2W (Ta)
Vgs(th) (Max) @ Id: 2.3V @ 15µA
Supplier Device Package: PG-TSOP6-6
Grade: Automotive
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 60 V
Gate Charge (Qg) (Max) @ Vgs: 5.6 nC @ 5 V
Input Capacitance (Ciss) (Max) @ Vds: 657 pF @ 25 V
Qualification: AEC-Q101
товару немає в наявності
Мінімальне замовлення: 3000 шт
В кошику
од. на суму грн.
| BSL802SNH6327XTSA1 |
|
Виробник: Infineon Technologies
Description: MOSFET N-CH 20V 7.5A TSOP-6
Description: MOSFET N-CH 20V 7.5A TSOP-6
товару немає в наявності
В кошику
од. на суму грн.
| BSP125H6433XTMA1 |
|
Виробник: Infineon Technologies
Description: MOSFET N-CH 600V 120MA SOT223-4
Packaging: Tape & Reel (TR)
Package / Case: TO-261-4, TO-261AA
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 120mA (Ta)
Power Dissipation (Max): 1.8W (Ta)
Vgs(th) (Max) @ Id: 2.3V @ 94µA
Supplier Device Package: PG-SOT223-4
Grade: Automotive
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 600 V
Gate Charge (Qg) (Max) @ Vgs: 6.6 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 150 pF @ 25 V
Qualification: AEC-Q101
Description: MOSFET N-CH 600V 120MA SOT223-4
Packaging: Tape & Reel (TR)
Package / Case: TO-261-4, TO-261AA
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 120mA (Ta)
Power Dissipation (Max): 1.8W (Ta)
Vgs(th) (Max) @ Id: 2.3V @ 94µA
Supplier Device Package: PG-SOT223-4
Grade: Automotive
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 600 V
Gate Charge (Qg) (Max) @ Vgs: 6.6 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 150 pF @ 25 V
Qualification: AEC-Q101
на замовлення 8000 шт:
термін постачання 21-31 дні (днів)
| Кількість | Ціна без ПДВ |
|---|---|
| 4000+ | 21.44 грн |
| BSP129H6906XTSA1 |
|
Виробник: Infineon Technologies
Description: MOSFET N-CH 240V 350MA SOT223-4
Packaging: Tape & Reel (TR)
Package / Case: TO-261-4, TO-261AA
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel, Depletion Mode
Current - Continuous Drain (Id) @ 25°C: 350mA (Ta)
Rds On (Max) @ Id, Vgs: 6Ohm @ 350mA, 10V
Power Dissipation (Max): 1.8W (Ta)
Vgs(th) (Max) @ Id: 1V @ 108µA
Supplier Device Package: PG-SOT223-4
Grade: Automotive
Part Status: Last Time Buy
Drive Voltage (Max Rds On, Min Rds On): 0V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 240 V
Gate Charge (Qg) (Max) @ Vgs: 5.7 nC @ 5 V
Input Capacitance (Ciss) (Max) @ Vds: 108 pF @ 25 V
Qualification: AEC-Q101
Description: MOSFET N-CH 240V 350MA SOT223-4
Packaging: Tape & Reel (TR)
Package / Case: TO-261-4, TO-261AA
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel, Depletion Mode
Current - Continuous Drain (Id) @ 25°C: 350mA (Ta)
Rds On (Max) @ Id, Vgs: 6Ohm @ 350mA, 10V
Power Dissipation (Max): 1.8W (Ta)
Vgs(th) (Max) @ Id: 1V @ 108µA
Supplier Device Package: PG-SOT223-4
Grade: Automotive
Part Status: Last Time Buy
Drive Voltage (Max Rds On, Min Rds On): 0V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 240 V
Gate Charge (Qg) (Max) @ Vgs: 5.7 nC @ 5 V
Input Capacitance (Ciss) (Max) @ Vds: 108 pF @ 25 V
Qualification: AEC-Q101
товару немає в наявності
В кошику
од. на суму грн.
| BSP135H6433XTMA1 |
|
Виробник: Infineon Technologies
Description: MOSFET N-CH 600V 120MA SOT223
Packaging: Tape & Reel (TR)
Package / Case: TO-261-4, TO-261AA
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel, Depletion Mode
Current - Continuous Drain (Id) @ 25°C: 120mA (Ta)
Rds On (Max) @ Id, Vgs: 45Ohm @ 120mA, 10V
Power Dissipation (Max): 1.8W (Ta)
Vgs(th) (Max) @ Id: 1V @ 94µA
Supplier Device Package: SOT-223
Grade: Automotive
Part Status: Last Time Buy
Drive Voltage (Max Rds On, Min Rds On): 0V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 600 V
Gate Charge (Qg) (Max) @ Vgs: 4.9 nC @ 5 V
Input Capacitance (Ciss) (Max) @ Vds: 146 pF @ 25 V
Qualification: AEC-Q101
Description: MOSFET N-CH 600V 120MA SOT223
Packaging: Tape & Reel (TR)
Package / Case: TO-261-4, TO-261AA
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel, Depletion Mode
Current - Continuous Drain (Id) @ 25°C: 120mA (Ta)
Rds On (Max) @ Id, Vgs: 45Ohm @ 120mA, 10V
Power Dissipation (Max): 1.8W (Ta)
Vgs(th) (Max) @ Id: 1V @ 94µA
Supplier Device Package: SOT-223
Grade: Automotive
Part Status: Last Time Buy
Drive Voltage (Max Rds On, Min Rds On): 0V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 600 V
Gate Charge (Qg) (Max) @ Vgs: 4.9 nC @ 5 V
Input Capacitance (Ciss) (Max) @ Vds: 146 pF @ 25 V
Qualification: AEC-Q101
товару немає в наявності
В кошику
од. на суму грн.
| BSP135H6906XTSA1 |
|
Виробник: Infineon Technologies
Description: MOSFET N-CH 600V 120MA SOT223-4
Packaging: Tape & Reel (TR)
Package / Case: TO-261-4, TO-261AA
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel, Depletion Mode
Current - Continuous Drain (Id) @ 25°C: 120mA (Ta)
Rds On (Max) @ Id, Vgs: 45Ohm @ 120mA, 10V
Power Dissipation (Max): 1.8W (Ta)
Vgs(th) (Max) @ Id: 1V @ 94µA
Supplier Device Package: PG-SOT223-4
Grade: Automotive
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 0V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 600 V
Gate Charge (Qg) (Max) @ Vgs: 4.9 nC @ 5 V
Input Capacitance (Ciss) (Max) @ Vds: 146 pF @ 25 V
Qualification: AEC-Q101
Description: MOSFET N-CH 600V 120MA SOT223-4
Packaging: Tape & Reel (TR)
Package / Case: TO-261-4, TO-261AA
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel, Depletion Mode
Current - Continuous Drain (Id) @ 25°C: 120mA (Ta)
Rds On (Max) @ Id, Vgs: 45Ohm @ 120mA, 10V
Power Dissipation (Max): 1.8W (Ta)
Vgs(th) (Max) @ Id: 1V @ 94µA
Supplier Device Package: PG-SOT223-4
Grade: Automotive
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 0V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 600 V
Gate Charge (Qg) (Max) @ Vgs: 4.9 nC @ 5 V
Input Capacitance (Ciss) (Max) @ Vds: 146 pF @ 25 V
Qualification: AEC-Q101
товару немає в наявності
Мінімальне замовлення: 1000 шт
В кошику
од. на суму грн.
| BSP299H6327XUSA1 |
|
Виробник: Infineon Technologies
Description: MOSFET N-CH 500V 400MA SOT223-4
Packaging: Tape & Reel (TR)
Package / Case: TO-261-4, TO-261AA
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 400mA (Ta)
Rds On (Max) @ Id, Vgs: 4Ohm @ 400mA, 10V
Power Dissipation (Max): 1.8W (Ta)
Vgs(th) (Max) @ Id: 4V @ 1mA
Supplier Device Package: PG-SOT223-4
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 500 V
Input Capacitance (Ciss) (Max) @ Vds: 400 pF @ 25 V
Description: MOSFET N-CH 500V 400MA SOT223-4
Packaging: Tape & Reel (TR)
Package / Case: TO-261-4, TO-261AA
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 400mA (Ta)
Rds On (Max) @ Id, Vgs: 4Ohm @ 400mA, 10V
Power Dissipation (Max): 1.8W (Ta)
Vgs(th) (Max) @ Id: 4V @ 1mA
Supplier Device Package: PG-SOT223-4
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 500 V
Input Capacitance (Ciss) (Max) @ Vds: 400 pF @ 25 V
товару немає в наявності
В кошику
од. на суму грн.
| BSP320SH6327XTSA1 |
|
Виробник: Infineon Technologies
Description: MOSFET N-CH 60V 2.9A SOT223-4
Packaging: Tape & Reel (TR)
Package / Case: TO-261-4, TO-261AA
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 2.9A (Tj)
Rds On (Max) @ Id, Vgs: 120mOhm @ 2.9A, 10V
Power Dissipation (Max): 1.8W (Ta)
Vgs(th) (Max) @ Id: 4V @ 20µA
Supplier Device Package: PG-SOT223-4
Grade: Automotive
Part Status: Last Time Buy
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 60 V
Gate Charge (Qg) (Max) @ Vgs: 12 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 340 pF @ 25 V
Qualification: AEC-Q101
Description: MOSFET N-CH 60V 2.9A SOT223-4
Packaging: Tape & Reel (TR)
Package / Case: TO-261-4, TO-261AA
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 2.9A (Tj)
Rds On (Max) @ Id, Vgs: 120mOhm @ 2.9A, 10V
Power Dissipation (Max): 1.8W (Ta)
Vgs(th) (Max) @ Id: 4V @ 20µA
Supplier Device Package: PG-SOT223-4
Grade: Automotive
Part Status: Last Time Buy
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 60 V
Gate Charge (Qg) (Max) @ Vgs: 12 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 340 pF @ 25 V
Qualification: AEC-Q101
товару немає в наявності
Мінімальне замовлення: 1000 шт
В кошику
од. на суму грн.
| BSP320SH6433XTMA1 |
|
Виробник: Infineon Technologies
Description: MOSFET N-CH 60V 2.9A SOT223
Packaging: Tape & Reel (TR)
Package / Case: TO-261-4, TO-261AA
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 2.9A (Tj)
Rds On (Max) @ Id, Vgs: 120mOhm @ 2.9A, 10V
Power Dissipation (Max): 1.8W (Ta)
Vgs(th) (Max) @ Id: 4V @ 20µA
Supplier Device Package: SOT-223
Grade: Automotive
Part Status: Last Time Buy
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 60 V
Gate Charge (Qg) (Max) @ Vgs: 9.3 nC @ 7 V
Input Capacitance (Ciss) (Max) @ Vds: 340 pF @ 25 V
Qualification: AEC-Q101
Description: MOSFET N-CH 60V 2.9A SOT223
Packaging: Tape & Reel (TR)
Package / Case: TO-261-4, TO-261AA
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 2.9A (Tj)
Rds On (Max) @ Id, Vgs: 120mOhm @ 2.9A, 10V
Power Dissipation (Max): 1.8W (Ta)
Vgs(th) (Max) @ Id: 4V @ 20µA
Supplier Device Package: SOT-223
Grade: Automotive
Part Status: Last Time Buy
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 60 V
Gate Charge (Qg) (Max) @ Vgs: 9.3 nC @ 7 V
Input Capacitance (Ciss) (Max) @ Vds: 340 pF @ 25 V
Qualification: AEC-Q101
товару немає в наявності
Мінімальне замовлення: 4000 шт
В кошику
од. на суму грн.
| BSP716NH6327XTSA1 |
|
Виробник: Infineon Technologies
Description: MOSFET N-CH 75V 2.3A SOT223-4
Packaging: Tape & Reel (TR)
Package / Case: TO-261-4, TO-261AA
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 2.3A (Ta)
Rds On (Max) @ Id, Vgs: 160mOhm @ 2.3A, 10V
Power Dissipation (Max): 1.8W (Ta)
Vgs(th) (Max) @ Id: 1.8V @ 218µA
Supplier Device Package: PG-SOT223-4
Part Status: Obsolete
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 75 V
Gate Charge (Qg) (Max) @ Vgs: 13.1 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 315 pF @ 25 V
Description: MOSFET N-CH 75V 2.3A SOT223-4
Packaging: Tape & Reel (TR)
Package / Case: TO-261-4, TO-261AA
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 2.3A (Ta)
Rds On (Max) @ Id, Vgs: 160mOhm @ 2.3A, 10V
Power Dissipation (Max): 1.8W (Ta)
Vgs(th) (Max) @ Id: 1.8V @ 218µA
Supplier Device Package: PG-SOT223-4
Part Status: Obsolete
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 75 V
Gate Charge (Qg) (Max) @ Vgs: 13.1 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 315 pF @ 25 V
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| BSP88H6327XTSA1 |
|
Виробник: Infineon Technologies
Description: MOSFET N-CH 240V 350MA SOT223-4
Packaging: Tape & Reel (TR)
Package / Case: TO-261-4, TO-261AA
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 350mA (Ta)
Rds On (Max) @ Id, Vgs: 6Ohm @ 350mA, 10V
Power Dissipation (Max): 1.8W (Ta)
Vgs(th) (Max) @ Id: 1.4V @ 108µA
Supplier Device Package: PG-SOT223-4
Grade: Automotive
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 2.8V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 240 V
Gate Charge (Qg) (Max) @ Vgs: 6.8 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 95 pF @ 25 V
Qualification: AEC-Q101
Description: MOSFET N-CH 240V 350MA SOT223-4
Packaging: Tape & Reel (TR)
Package / Case: TO-261-4, TO-261AA
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 350mA (Ta)
Rds On (Max) @ Id, Vgs: 6Ohm @ 350mA, 10V
Power Dissipation (Max): 1.8W (Ta)
Vgs(th) (Max) @ Id: 1.4V @ 108µA
Supplier Device Package: PG-SOT223-4
Grade: Automotive
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 2.8V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 240 V
Gate Charge (Qg) (Max) @ Vgs: 6.8 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 95 pF @ 25 V
Qualification: AEC-Q101
на замовлення 25000 шт:
термін постачання 21-31 дні (днів)
| Кількість | Ціна без ПДВ |
|---|---|
| 1000+ | 18.96 грн |
| 3000+ | 15.74 грн |
| BSP92PH6327XTSA1 |
|
Виробник: Infineon Technologies
Description: MOSFET P-CH 250V 260MA SOT223-4
Packaging: Tape & Reel (TR)
Package / Case: TO-261-4, TO-261AA
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: P-Channel
Current - Continuous Drain (Id) @ 25°C: 260mA (Ta)
Rds On (Max) @ Id, Vgs: 12Ohm @ 260mA, 10V
Power Dissipation (Max): 1.8W (Ta)
Vgs(th) (Max) @ Id: 2V @ 130µA
Supplier Device Package: PG-SOT223-4
Grade: Automotive
Drive Voltage (Max Rds On, Min Rds On): 2.8V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 250 V
Gate Charge (Qg) (Max) @ Vgs: 5.4 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 104 pF @ 25 V
Qualification: AEC-Q101
Description: MOSFET P-CH 250V 260MA SOT223-4
Packaging: Tape & Reel (TR)
Package / Case: TO-261-4, TO-261AA
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: P-Channel
Current - Continuous Drain (Id) @ 25°C: 260mA (Ta)
Rds On (Max) @ Id, Vgs: 12Ohm @ 260mA, 10V
Power Dissipation (Max): 1.8W (Ta)
Vgs(th) (Max) @ Id: 2V @ 130µA
Supplier Device Package: PG-SOT223-4
Grade: Automotive
Drive Voltage (Max Rds On, Min Rds On): 2.8V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 250 V
Gate Charge (Qg) (Max) @ Vgs: 5.4 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 104 pF @ 25 V
Qualification: AEC-Q101
на замовлення 10000 шт:
термін постачання 21-31 дні (днів)
| Кількість | Ціна без ПДВ |
|---|---|
| 1000+ | 19.42 грн |
| 3000+ | 16.15 грн |
| BSS119NH6433XTMA1 |
|
Виробник: Infineon Technologies
Description: MOSFET N-CH 100V 190MA SOT23-3
Description: MOSFET N-CH 100V 190MA SOT23-3
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В кошику
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| BSS138WH6433XTMA1 |
|
Виробник: Infineon Technologies
Description: MOSFET N-CH 60V 280MA SOT323-3
Packaging: Tape & Reel (TR)
Package / Case: SC-70, SOT-323
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 280mA (Ta)
Rds On (Max) @ Id, Vgs: 3.5Ohm @ 200mA, 10V
Power Dissipation (Max): 500mW (Ta)
Vgs(th) (Max) @ Id: 1.4V @ 26µA
Supplier Device Package: PG-SOT323
Grade: Automotive
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 60 V
Gate Charge (Qg) (Max) @ Vgs: 1.5 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 43 pF @ 25 V
Qualification: AEC-Q101
Description: MOSFET N-CH 60V 280MA SOT323-3
Packaging: Tape & Reel (TR)
Package / Case: SC-70, SOT-323
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 280mA (Ta)
Rds On (Max) @ Id, Vgs: 3.5Ohm @ 200mA, 10V
Power Dissipation (Max): 500mW (Ta)
Vgs(th) (Max) @ Id: 1.4V @ 26µA
Supplier Device Package: PG-SOT323
Grade: Automotive
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 60 V
Gate Charge (Qg) (Max) @ Vgs: 1.5 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 43 pF @ 25 V
Qualification: AEC-Q101
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Мінімальне замовлення: 10000 шт
В кошику
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| BSS139H6906XTSA1 |
|
Виробник: Infineon Technologies
Description: MOSFET N-CH 250V 100MA SOT23-3
Packaging: Tape & Reel (TR)
Package / Case: TO-236-3, SC-59, SOT-23-3
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel, Depletion Mode
Current - Continuous Drain (Id) @ 25°C: 100mA (Ta)
Rds On (Max) @ Id, Vgs: 14Ohm @ 100mA, 10V
Power Dissipation (Max): 360mW (Ta)
Vgs(th) (Max) @ Id: 1V @ 56µA
Supplier Device Package: PG-SOT23-3-5
Grade: Automotive
Part Status: Last Time Buy
Drive Voltage (Max Rds On, Min Rds On): 0V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 250 V
Gate Charge (Qg) (Max) @ Vgs: 3.5 nC @ 5 V
Input Capacitance (Ciss) (Max) @ Vds: 76 pF @ 25 V
Qualification: AEC-Q101
Description: MOSFET N-CH 250V 100MA SOT23-3
Packaging: Tape & Reel (TR)
Package / Case: TO-236-3, SC-59, SOT-23-3
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel, Depletion Mode
Current - Continuous Drain (Id) @ 25°C: 100mA (Ta)
Rds On (Max) @ Id, Vgs: 14Ohm @ 100mA, 10V
Power Dissipation (Max): 360mW (Ta)
Vgs(th) (Max) @ Id: 1V @ 56µA
Supplier Device Package: PG-SOT23-3-5
Grade: Automotive
Part Status: Last Time Buy
Drive Voltage (Max Rds On, Min Rds On): 0V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 250 V
Gate Charge (Qg) (Max) @ Vgs: 3.5 nC @ 5 V
Input Capacitance (Ciss) (Max) @ Vds: 76 pF @ 25 V
Qualification: AEC-Q101
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В кошику
од. на суму грн.
| BSS169H6906XTSA1 |
|
Виробник: Infineon Technologies
Description: MOSFET N-CH 100V 170MA SOT23-3
Packaging: Tape & Reel (TR)
Package / Case: TO-236-3, SC-59, SOT-23-3
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel, Depletion Mode
Current - Continuous Drain (Id) @ 25°C: 170mA (Ta)
Rds On (Max) @ Id, Vgs: 6Ohm @ 170mA, 10V
Power Dissipation (Max): 360mW (Ta)
Vgs(th) (Max) @ Id: 1.8V @ 50µA
Supplier Device Package: PG-SOT23
Grade: Automotive
Part Status: Not For New Designs
Drive Voltage (Max Rds On, Min Rds On): 0V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 100 V
Gate Charge (Qg) (Max) @ Vgs: 2.8 nC @ 7 V
Input Capacitance (Ciss) (Max) @ Vds: 68 pF @ 10 V
Qualification: AEC-Q101
Description: MOSFET N-CH 100V 170MA SOT23-3
Packaging: Tape & Reel (TR)
Package / Case: TO-236-3, SC-59, SOT-23-3
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel, Depletion Mode
Current - Continuous Drain (Id) @ 25°C: 170mA (Ta)
Rds On (Max) @ Id, Vgs: 6Ohm @ 170mA, 10V
Power Dissipation (Max): 360mW (Ta)
Vgs(th) (Max) @ Id: 1.8V @ 50µA
Supplier Device Package: PG-SOT23
Grade: Automotive
Part Status: Not For New Designs
Drive Voltage (Max Rds On, Min Rds On): 0V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 100 V
Gate Charge (Qg) (Max) @ Vgs: 2.8 nC @ 7 V
Input Capacitance (Ciss) (Max) @ Vds: 68 pF @ 10 V
Qualification: AEC-Q101
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В кошику
од. на суму грн.
| BSS192PH6327XTSA1 |
|
Виробник: Infineon Technologies
Description: MOSFET P-CH 250V 190MA SOT89
Packaging: Tape & Reel (TR)
Package / Case: TO-243AA
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: P-Channel
Current - Continuous Drain (Id) @ 25°C: 190mA (Ta)
Rds On (Max) @ Id, Vgs: 12Ohm @ 190mA, 10V
Power Dissipation (Max): 1W (Ta)
Vgs(th) (Max) @ Id: 2V @ 130µA
Supplier Device Package: PG-SOT89
Grade: Automotive
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 2.8V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 250 V
Gate Charge (Qg) (Max) @ Vgs: 6.1 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 104 pF @ 25 V
Qualification: AEC-Q101
Description: MOSFET P-CH 250V 190MA SOT89
Packaging: Tape & Reel (TR)
Package / Case: TO-243AA
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: P-Channel
Current - Continuous Drain (Id) @ 25°C: 190mA (Ta)
Rds On (Max) @ Id, Vgs: 12Ohm @ 190mA, 10V
Power Dissipation (Max): 1W (Ta)
Vgs(th) (Max) @ Id: 2V @ 130µA
Supplier Device Package: PG-SOT89
Grade: Automotive
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 2.8V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 250 V
Gate Charge (Qg) (Max) @ Vgs: 6.1 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 104 pF @ 25 V
Qualification: AEC-Q101
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В кошику
од. на суму грн.
| BSS214NWH6327XTSA1 |
|
Виробник: Infineon Technologies
Description: MOSFET N-CH 20V 1.5A SOT323-3
Packaging: Tape & Reel (TR)
Package / Case: SC-70, SOT-323
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 1.5A (Ta)
Rds On (Max) @ Id, Vgs: 140mOhm @ 1.5A, 4.5V
Power Dissipation (Max): 500mW (Ta)
Vgs(th) (Max) @ Id: 1.2V @ 3.7µA
Supplier Device Package: PG-SOT323
Grade: Automotive
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 2.5V, 4.5V
Vgs (Max): ±12V
Drain to Source Voltage (Vdss): 20 V
Gate Charge (Qg) (Max) @ Vgs: 0.8 nC @ 5 V
Input Capacitance (Ciss) (Max) @ Vds: 143 pF @ 10 V
Qualification: AEC-Q101
Description: MOSFET N-CH 20V 1.5A SOT323-3
Packaging: Tape & Reel (TR)
Package / Case: SC-70, SOT-323
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 1.5A (Ta)
Rds On (Max) @ Id, Vgs: 140mOhm @ 1.5A, 4.5V
Power Dissipation (Max): 500mW (Ta)
Vgs(th) (Max) @ Id: 1.2V @ 3.7µA
Supplier Device Package: PG-SOT323
Grade: Automotive
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 2.5V, 4.5V
Vgs (Max): ±12V
Drain to Source Voltage (Vdss): 20 V
Gate Charge (Qg) (Max) @ Vgs: 0.8 nC @ 5 V
Input Capacitance (Ciss) (Max) @ Vds: 143 pF @ 10 V
Qualification: AEC-Q101
на замовлення 21000 шт:
термін постачання 21-31 дні (днів)
| Кількість | Ціна без ПДВ |
|---|---|
| 3000+ | 5.36 грн |
| 9000+ | 4.40 грн |
| BSS225H6327XTSA1 |
|
Виробник: Infineon Technologies
Description: MOSFET N-CH 600V 90MA SOT89
Packaging: Tape & Reel (TR)
Package / Case: TO-243AA
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 90mA (Ta)
Rds On (Max) @ Id, Vgs: 45Ohm @ 90mA, 10V
Power Dissipation (Max): 1W (Ta)
Vgs(th) (Max) @ Id: 2.3V @ 94µA
Supplier Device Package: PG-SOT89
Grade: Automotive
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 600 V
Gate Charge (Qg) (Max) @ Vgs: 5.8 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 131 pF @ 25 V
Qualification: AEC-Q101
Description: MOSFET N-CH 600V 90MA SOT89
Packaging: Tape & Reel (TR)
Package / Case: TO-243AA
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 90mA (Ta)
Rds On (Max) @ Id, Vgs: 45Ohm @ 90mA, 10V
Power Dissipation (Max): 1W (Ta)
Vgs(th) (Max) @ Id: 2.3V @ 94µA
Supplier Device Package: PG-SOT89
Grade: Automotive
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 600 V
Gate Charge (Qg) (Max) @ Vgs: 5.8 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 131 pF @ 25 V
Qualification: AEC-Q101
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В кошику
од. на суму грн.
| BSS606NH6327XTSA1 |
|
Виробник: Infineon Technologies
Description: MOSFET N-CH 60V 3.2A SOT89
Packaging: Tape & Reel (TR)
Package / Case: TO-243AA
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 3.2A (Ta)
Rds On (Max) @ Id, Vgs: 60mOhm @ 3.2A, 10V
Power Dissipation (Max): 1W (Ta)
Vgs(th) (Max) @ Id: 2.3V @ 15µA
Supplier Device Package: PG-SOT89
Grade: Automotive
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 60 V
Gate Charge (Qg) (Max) @ Vgs: 5.6 nC @ 5 V
Input Capacitance (Ciss) (Max) @ Vds: 657 pF @ 25 V
Qualification: AEC-Q101
Description: MOSFET N-CH 60V 3.2A SOT89
Packaging: Tape & Reel (TR)
Package / Case: TO-243AA
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 3.2A (Ta)
Rds On (Max) @ Id, Vgs: 60mOhm @ 3.2A, 10V
Power Dissipation (Max): 1W (Ta)
Vgs(th) (Max) @ Id: 2.3V @ 15µA
Supplier Device Package: PG-SOT89
Grade: Automotive
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 60 V
Gate Charge (Qg) (Max) @ Vgs: 5.6 nC @ 5 V
Input Capacitance (Ciss) (Max) @ Vds: 657 pF @ 25 V
Qualification: AEC-Q101
на замовлення 2000 шт:
термін постачання 21-31 дні (днів)
| Кількість | Ціна без ПДВ |
|---|---|
| 1000+ | 17.60 грн |
| BSS806NEH6327XTSA1 |
|
Виробник: Infineon Technologies
Description: MOSFET N-CH 20V 2.3A SOT23-3
Packaging: Tape & Reel (TR)
Package / Case: TO-236-3, SC-59, SOT-23-3
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 2.3A (Ta)
Rds On (Max) @ Id, Vgs: 57mOhm @ 2.3A, 2.5V
Power Dissipation (Max): 500mW (Ta)
Vgs(th) (Max) @ Id: 750mV @ 11µA
Supplier Device Package: PG-SOT23
Grade: Automotive
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 1.8V, 2.5V
Vgs (Max): ±8V
Drain to Source Voltage (Vdss): 20 V
Gate Charge (Qg) (Max) @ Vgs: 1.7 nC @ 2.5 V
Input Capacitance (Ciss) (Max) @ Vds: 529 pF @ 10 V
Qualification: AEC-Q101
Description: MOSFET N-CH 20V 2.3A SOT23-3
Packaging: Tape & Reel (TR)
Package / Case: TO-236-3, SC-59, SOT-23-3
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 2.3A (Ta)
Rds On (Max) @ Id, Vgs: 57mOhm @ 2.3A, 2.5V
Power Dissipation (Max): 500mW (Ta)
Vgs(th) (Max) @ Id: 750mV @ 11µA
Supplier Device Package: PG-SOT23
Grade: Automotive
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 1.8V, 2.5V
Vgs (Max): ±8V
Drain to Source Voltage (Vdss): 20 V
Gate Charge (Qg) (Max) @ Vgs: 1.7 nC @ 2.5 V
Input Capacitance (Ciss) (Max) @ Vds: 529 pF @ 10 V
Qualification: AEC-Q101
на замовлення 90000 шт:
термін постачання 21-31 дні (днів)
| Кількість | Ціна без ПДВ |
|---|---|
| 3000+ | 6.40 грн |
| 9000+ | 5.27 грн |
| BSS816NWH6327XTSA1 |
|
Виробник: Infineon Technologies
Description: MOSFET N-CH 20V 1.4A SOT323-3
Packaging: Tape & Reel (TR)
Package / Case: SC-70, SOT-323
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 1.4A (Ta)
Rds On (Max) @ Id, Vgs: 160mOhm @ 1.4A, 2.5V
Power Dissipation (Max): 500mW (Ta)
Vgs(th) (Max) @ Id: 750mV @ 3.7µA
Supplier Device Package: PG-SOT323
Grade: Automotive
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 1.8V, 2.5V
Vgs (Max): ±8V
Drain to Source Voltage (Vdss): 20 V
Gate Charge (Qg) (Max) @ Vgs: 0.6 nC @ 2.5 V
Input Capacitance (Ciss) (Max) @ Vds: 180 pF @ 10 V
Qualification: AEC-Q101
Description: MOSFET N-CH 20V 1.4A SOT323-3
Packaging: Tape & Reel (TR)
Package / Case: SC-70, SOT-323
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 1.4A (Ta)
Rds On (Max) @ Id, Vgs: 160mOhm @ 1.4A, 2.5V
Power Dissipation (Max): 500mW (Ta)
Vgs(th) (Max) @ Id: 750mV @ 3.7µA
Supplier Device Package: PG-SOT323
Grade: Automotive
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 1.8V, 2.5V
Vgs (Max): ±8V
Drain to Source Voltage (Vdss): 20 V
Gate Charge (Qg) (Max) @ Vgs: 0.6 nC @ 2.5 V
Input Capacitance (Ciss) (Max) @ Vds: 180 pF @ 10 V
Qualification: AEC-Q101
на замовлення 456000 шт:
термін постачання 21-31 дні (днів)
| Кількість | Ціна без ПДВ |
|---|---|
| 3000+ | 4.97 грн |
| 9000+ | 4.07 грн |
| BSS87H6327FTSA1 |
|
Виробник: Infineon Technologies
Description: MOSFET N-CH 240V 260MA SOT89-4
Packaging: Tape & Reel (TR)
Package / Case: TO-243AA
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 260mA (Ta)
Rds On (Max) @ Id, Vgs: 6Ohm @ 260mA, 10V
Power Dissipation (Max): 1W (Ta)
Vgs(th) (Max) @ Id: 1.8V @ 108µA
Supplier Device Package: PG-SOT89-4-2
Grade: Automotive
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 240 V
Gate Charge (Qg) (Max) @ Vgs: 5.5 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 97 pF @ 25 V
Qualification: AEC-Q101
Description: MOSFET N-CH 240V 260MA SOT89-4
Packaging: Tape & Reel (TR)
Package / Case: TO-243AA
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 260mA (Ta)
Rds On (Max) @ Id, Vgs: 6Ohm @ 260mA, 10V
Power Dissipation (Max): 1W (Ta)
Vgs(th) (Max) @ Id: 1.8V @ 108µA
Supplier Device Package: PG-SOT89-4-2
Grade: Automotive
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 240 V
Gate Charge (Qg) (Max) @ Vgs: 5.5 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 97 pF @ 25 V
Qualification: AEC-Q101
на замовлення 9000 шт:
термін постачання 21-31 дні (днів)
| Кількість | Ціна без ПДВ |
|---|---|
| 1000+ | 17.15 грн |
| 3000+ | 14.19 грн |
| BSS87H6327XTSA1 |
|
Виробник: Infineon Technologies
Description: MOSFET N-CH 240V 260MA SOT89-4
Packaging: Tape & Reel (TR)
Package / Case: TO-243AA
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 260mA (Ta)
Rds On (Max) @ Id, Vgs: 6Ohm @ 260mA, 10V
Power Dissipation (Max): 1W (Ta)
Vgs(th) (Max) @ Id: 1.8V @ 108µA
Supplier Device Package: PG-SOT89-4-2
Grade: Automotive
Part Status: Not For New Designs
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 240 V
Gate Charge (Qg) (Max) @ Vgs: 5.5 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 97 pF @ 25 V
Qualification: AEC-Q101
Description: MOSFET N-CH 240V 260MA SOT89-4
Packaging: Tape & Reel (TR)
Package / Case: TO-243AA
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 260mA (Ta)
Rds On (Max) @ Id, Vgs: 6Ohm @ 260mA, 10V
Power Dissipation (Max): 1W (Ta)
Vgs(th) (Max) @ Id: 1.8V @ 108µA
Supplier Device Package: PG-SOT89-4-2
Grade: Automotive
Part Status: Not For New Designs
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 240 V
Gate Charge (Qg) (Max) @ Vgs: 5.5 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 97 pF @ 25 V
Qualification: AEC-Q101
товару немає в наявності
Мінімальне замовлення: 1000 шт
В кошику
од. на суму грн.
| BSZ014NE2LS5IFATMA1 |
|
Виробник: Infineon Technologies
Description: MOSFET N-CH 25V 31A/40A TSDSON
Packaging: Tape & Reel (TR)
Package / Case: 8-PowerTDFN
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 31A (Ta), 40A (Tc)
Rds On (Max) @ Id, Vgs: 1.45mOhm @ 20A, 10V
FET Feature: Schottky Diode (Body)
Power Dissipation (Max): 2.1W (Ta), 69W (Tc)
Vgs(th) (Max) @ Id: 2V @ 250µA
Supplier Device Package: PG-TSDSON-8-FL
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±16V
Drain to Source Voltage (Vdss): 25 V
Gate Charge (Qg) (Max) @ Vgs: 33 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 2300 pF @ 12 V
Description: MOSFET N-CH 25V 31A/40A TSDSON
Packaging: Tape & Reel (TR)
Package / Case: 8-PowerTDFN
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 31A (Ta), 40A (Tc)
Rds On (Max) @ Id, Vgs: 1.45mOhm @ 20A, 10V
FET Feature: Schottky Diode (Body)
Power Dissipation (Max): 2.1W (Ta), 69W (Tc)
Vgs(th) (Max) @ Id: 2V @ 250µA
Supplier Device Package: PG-TSDSON-8-FL
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±16V
Drain to Source Voltage (Vdss): 25 V
Gate Charge (Qg) (Max) @ Vgs: 33 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 2300 pF @ 12 V
товару немає в наявності
Мінімальне замовлення: 5000 шт
В кошику
од. на суму грн.
| BSZ034N04LSATMA1 |
|
Виробник: Infineon Technologies
Description: MOSFET N-CH 40V 19A/40A TSDSON
Packaging: Tape & Reel (TR)
Package / Case: 8-PowerTDFN
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 19A (Ta), 40A (Tc)
Rds On (Max) @ Id, Vgs: 3.4mOhm @ 20A, 10V
Power Dissipation (Max): 2.1W (Ta), 52W (Tc)
Vgs(th) (Max) @ Id: 2V @ 250µA
Supplier Device Package: PG-TSDSON-8-FL
Grade: Automotive
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 40 V
Gate Charge (Qg) (Max) @ Vgs: 25 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 1800 pF @ 20 V
Qualification: AEC-Q101
Description: MOSFET N-CH 40V 19A/40A TSDSON
Packaging: Tape & Reel (TR)
Package / Case: 8-PowerTDFN
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 19A (Ta), 40A (Tc)
Rds On (Max) @ Id, Vgs: 3.4mOhm @ 20A, 10V
Power Dissipation (Max): 2.1W (Ta), 52W (Tc)
Vgs(th) (Max) @ Id: 2V @ 250µA
Supplier Device Package: PG-TSDSON-8-FL
Grade: Automotive
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 40 V
Gate Charge (Qg) (Max) @ Vgs: 25 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 1800 pF @ 20 V
Qualification: AEC-Q101
товару немає в наявності
Мінімальне замовлення: 5000 шт
В кошику
од. на суму грн.
| BSZ0506NSATMA1 |
|
Виробник: Infineon Technologies
Description: MOSFET N-CH 30V 15A/40A TSDSON
Packaging: Tape & Reel (TR)
Package / Case: 8-PowerTDFN
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 15A (Ta), 40A (Tc)
Rds On (Max) @ Id, Vgs: 4.4mOhm @ 20A, 10V
Power Dissipation (Max): 2.1W (Ta), 27W (Tc)
Vgs(th) (Max) @ Id: 2V @ 250µA
Supplier Device Package: PG-TSDSON-8-FL
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 30 V
Gate Charge (Qg) (Max) @ Vgs: 15 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 950 pF @ 15 V
Description: MOSFET N-CH 30V 15A/40A TSDSON
Packaging: Tape & Reel (TR)
Package / Case: 8-PowerTDFN
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 15A (Ta), 40A (Tc)
Rds On (Max) @ Id, Vgs: 4.4mOhm @ 20A, 10V
Power Dissipation (Max): 2.1W (Ta), 27W (Tc)
Vgs(th) (Max) @ Id: 2V @ 250µA
Supplier Device Package: PG-TSDSON-8-FL
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 30 V
Gate Charge (Qg) (Max) @ Vgs: 15 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 950 pF @ 15 V
на замовлення 5000 шт:
термін постачання 21-31 дні (днів)
| Кількість | Ціна без ПДВ |
|---|---|
| 5000+ | 18.82 грн |
| BSZ068N06NSATMA1 |
|
Виробник: Infineon Technologies
Description: MOSFET N-CH 60V 40A TSDSON
Packaging: Tape & Reel (TR)
Package / Case: 8-PowerTDFN
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 40A (Tc)
Rds On (Max) @ Id, Vgs: 6.8mOhm @ 20A, 10V
Power Dissipation (Max): 2.1W (Ta), 46W (Tc)
Vgs(th) (Max) @ Id: 3.3V @ 20µA
Supplier Device Package: PG-TSDSON-8-FL
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 6V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 60 V
Gate Charge (Qg) (Max) @ Vgs: 21 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 1500 pF @ 30 V
Description: MOSFET N-CH 60V 40A TSDSON
Packaging: Tape & Reel (TR)
Package / Case: 8-PowerTDFN
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 40A (Tc)
Rds On (Max) @ Id, Vgs: 6.8mOhm @ 20A, 10V
Power Dissipation (Max): 2.1W (Ta), 46W (Tc)
Vgs(th) (Max) @ Id: 3.3V @ 20µA
Supplier Device Package: PG-TSDSON-8-FL
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 6V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 60 V
Gate Charge (Qg) (Max) @ Vgs: 21 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 1500 pF @ 30 V
товару немає в наявності
Мінімальне замовлення: 5000 шт
В кошику
од. на суму грн.
| BSZ075N08NS5ATMA1 |
|
Виробник: Infineon Technologies
Description: MOSFET N-CH 80V 40A 8TSDSON
Packaging: Tape & Reel (TR)
Package / Case: 8-PowerTDFN
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 40A (Tc)
Rds On (Max) @ Id, Vgs: 7.5mOhm @ 20A, 10V
Power Dissipation (Max): 69W (Tc)
Vgs(th) (Max) @ Id: 3.8V @ 36µA
Supplier Device Package: PG-TSDSON-8-26
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 6V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 80 V
Gate Charge (Qg) (Max) @ Vgs: 29.5 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 2080 pF @ 40 V
Description: MOSFET N-CH 80V 40A 8TSDSON
Packaging: Tape & Reel (TR)
Package / Case: 8-PowerTDFN
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 40A (Tc)
Rds On (Max) @ Id, Vgs: 7.5mOhm @ 20A, 10V
Power Dissipation (Max): 69W (Tc)
Vgs(th) (Max) @ Id: 3.8V @ 36µA
Supplier Device Package: PG-TSDSON-8-26
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 6V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 80 V
Gate Charge (Qg) (Max) @ Vgs: 29.5 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 2080 pF @ 40 V
товару немає в наявності
Мінімальне замовлення: 5000 шт
В кошику
од. на суму грн.
| BSZ100N06NSATMA1 |
|
Виробник: Infineon Technologies
Description: MOSFET N-CH 60V 40A TSDSON
Packaging: Tape & Reel (TR)
Package / Case: 8-PowerTDFN
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 40A (Tc)
Rds On (Max) @ Id, Vgs: 10mOhm @ 20A, 10V
Power Dissipation (Max): 2.1W (Ta), 36W (Tc)
Vgs(th) (Max) @ Id: 3.3V @ 14µA
Supplier Device Package: PG-TSDSON-8-FL
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 6V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 60 V
Gate Charge (Qg) (Max) @ Vgs: 15 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 1075 pF @ 30 V
Description: MOSFET N-CH 60V 40A TSDSON
Packaging: Tape & Reel (TR)
Package / Case: 8-PowerTDFN
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 40A (Tc)
Rds On (Max) @ Id, Vgs: 10mOhm @ 20A, 10V
Power Dissipation (Max): 2.1W (Ta), 36W (Tc)
Vgs(th) (Max) @ Id: 3.3V @ 14µA
Supplier Device Package: PG-TSDSON-8-FL
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 6V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 60 V
Gate Charge (Qg) (Max) @ Vgs: 15 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 1075 pF @ 30 V
товару немає в наявності
Мінімальне замовлення: 5000 шт
В кошику
од. на суму грн.
| BSZ150N10LS3GATMA1 |
|
Виробник: Infineon Technologies
Description: MOSFET N-CH 100V 40A 8TSDSON
Packaging: Tape & Reel (TR)
Package / Case: 8-PowerTDFN
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 40A (Tc)
Rds On (Max) @ Id, Vgs: 15mOhm @ 20A, 10V
Power Dissipation (Max): 2.1W (Ta), 63W (Tc)
Vgs(th) (Max) @ Id: 2.1V @ 33µA
Supplier Device Package: PG-TSDSON-8
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 100 V
Gate Charge (Qg) (Max) @ Vgs: 35 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 2500 pF @ 50 V
Description: MOSFET N-CH 100V 40A 8TSDSON
Packaging: Tape & Reel (TR)
Package / Case: 8-PowerTDFN
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 40A (Tc)
Rds On (Max) @ Id, Vgs: 15mOhm @ 20A, 10V
Power Dissipation (Max): 2.1W (Ta), 63W (Tc)
Vgs(th) (Max) @ Id: 2.1V @ 33µA
Supplier Device Package: PG-TSDSON-8
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 100 V
Gate Charge (Qg) (Max) @ Vgs: 35 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 2500 pF @ 50 V
на замовлення 5000 шт:
термін постачання 21-31 дні (днів)
| Кількість | Ціна без ПДВ |
|---|---|
| 5000+ | 36.50 грн |
| BSZ15DC02KDHXTMA1 |
|
Виробник: Infineon Technologies
Description: MOSFET N/P-CH 20V 5.1A 8TSDSON
Packaging: Tape & Reel (TR)
Package / Case: 8-PowerTDFN
Mounting Type: Surface Mount
Configuration: N and P-Channel Complementary
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
Power - Max: 2.5W
Drain to Source Voltage (Vdss): 20V
Current - Continuous Drain (Id) @ 25°C: 5.1A, 3.2A
Input Capacitance (Ciss) (Max) @ Vds: 419pF @ 10V
Rds On (Max) @ Id, Vgs: 55mOhm @ 5.1A, 4.5V
Gate Charge (Qg) (Max) @ Vgs: 2.8nC @ 4.5V
FET Feature: Logic Level Gate, 2.5V Drive
Vgs(th) (Max) @ Id: 1.4V @ 110µA
Supplier Device Package: PG-TSDSON-8-FL
Grade: Automotive
Part Status: Active
Qualification: AEC-Q101
Description: MOSFET N/P-CH 20V 5.1A 8TSDSON
Packaging: Tape & Reel (TR)
Package / Case: 8-PowerTDFN
Mounting Type: Surface Mount
Configuration: N and P-Channel Complementary
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
Power - Max: 2.5W
Drain to Source Voltage (Vdss): 20V
Current - Continuous Drain (Id) @ 25°C: 5.1A, 3.2A
Input Capacitance (Ciss) (Max) @ Vds: 419pF @ 10V
Rds On (Max) @ Id, Vgs: 55mOhm @ 5.1A, 4.5V
Gate Charge (Qg) (Max) @ Vgs: 2.8nC @ 4.5V
FET Feature: Logic Level Gate, 2.5V Drive
Vgs(th) (Max) @ Id: 1.4V @ 110µA
Supplier Device Package: PG-TSDSON-8-FL
Grade: Automotive
Part Status: Active
Qualification: AEC-Q101
на замовлення 10000 шт:
термін постачання 21-31 дні (днів)
| Кількість | Ціна без ПДВ |
|---|---|
| 5000+ | 35.13 грн |
| BSZ215CHXTMA1 |
|
Виробник: Infineon Technologies
Description: MOSFET N/P-CH 20V 5.1A 8TSDSON
Packaging: Tape & Reel (TR)
Package / Case: 8-PowerTDFN
Mounting Type: Surface Mount
Configuration: N and P-Channel Complementary
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
Power - Max: 2.5W
Drain to Source Voltage (Vdss): 20V
Current - Continuous Drain (Id) @ 25°C: 5.1A, 3.2A
Input Capacitance (Ciss) (Max) @ Vds: 419pF @ 10V
Rds On (Max) @ Id, Vgs: 55mOhm @ 5.1A, 4.5V
Gate Charge (Qg) (Max) @ Vgs: 2.8nC @ 4.5V
FET Feature: Logic Level Gate, 2.5V Drive
Vgs(th) (Max) @ Id: 1.4V @ 110µA
Supplier Device Package: PG-TSDSON-8
Grade: Automotive
Part Status: Active
Qualification: AEC-Q101
Description: MOSFET N/P-CH 20V 5.1A 8TSDSON
Packaging: Tape & Reel (TR)
Package / Case: 8-PowerTDFN
Mounting Type: Surface Mount
Configuration: N and P-Channel Complementary
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
Power - Max: 2.5W
Drain to Source Voltage (Vdss): 20V
Current - Continuous Drain (Id) @ 25°C: 5.1A, 3.2A
Input Capacitance (Ciss) (Max) @ Vds: 419pF @ 10V
Rds On (Max) @ Id, Vgs: 55mOhm @ 5.1A, 4.5V
Gate Charge (Qg) (Max) @ Vgs: 2.8nC @ 4.5V
FET Feature: Logic Level Gate, 2.5V Drive
Vgs(th) (Max) @ Id: 1.4V @ 110µA
Supplier Device Package: PG-TSDSON-8
Grade: Automotive
Part Status: Active
Qualification: AEC-Q101
товару немає в наявності
Мінімальне замовлення: 5000 шт
В кошику
од. на суму грн.
| BTC300101TAAATMA1 |
|
Виробник: Infineon Technologies
Description: IC PWR SWITCH N-CHAN 1:1 TO263-7
Packaging: Tape & Reel (TR)
Package / Case: TO-263-7, D2PAK (6 Leads + Tab)
Output Type: N-Channel
Mounting Type: Surface Mount
Number of Outputs: 1
Interface: On/Off
Switch Type: General Purpose
Operating Temperature: -40°C ~ 150°C (TJ)
Output Configuration: High Side
Input Type: Non-Inverting
Voltage - Load: 5V ~ 28V
Voltage - Supply (Vcc/Vdd): Not Required
Current - Output (Max): 30A
Ratio - Input:Output: 1:1
Supplier Device Package: PG-TO263-7-8
Grade: Automotive
Part Status: Obsolete
Description: IC PWR SWITCH N-CHAN 1:1 TO263-7
Packaging: Tape & Reel (TR)
Package / Case: TO-263-7, D2PAK (6 Leads + Tab)
Output Type: N-Channel
Mounting Type: Surface Mount
Number of Outputs: 1
Interface: On/Off
Switch Type: General Purpose
Operating Temperature: -40°C ~ 150°C (TJ)
Output Configuration: High Side
Input Type: Non-Inverting
Voltage - Load: 5V ~ 28V
Voltage - Supply (Vcc/Vdd): Not Required
Current - Output (Max): 30A
Ratio - Input:Output: 1:1
Supplier Device Package: PG-TO263-7-8
Grade: Automotive
Part Status: Obsolete
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В кошику
од. на суму грн.
| BTC500101TAAATMA1 |
|
Виробник: Infineon Technologies
Description: IC PWR SWITCH N-CHAN 1:1 TO263-7
Packaging: Tape & Reel (TR)
Package / Case: TO-263-7, D2PAK (6 Leads + Tab)
Output Type: N-Channel
Mounting Type: Surface Mount
Number of Outputs: 1
Interface: Parallel
Switch Type: General Purpose
Operating Temperature: -40°C ~ 150°C (TJ)
Output Configuration: High Side
Input Type: Non-Inverting
Voltage - Load: 5V ~ 28V
Voltage - Supply (Vcc/Vdd): Not Required
Current - Output (Max): 30A
Ratio - Input:Output: 1:1
Supplier Device Package: PG-TO263-7-8
Grade: Automotive
Description: IC PWR SWITCH N-CHAN 1:1 TO263-7
Packaging: Tape & Reel (TR)
Package / Case: TO-263-7, D2PAK (6 Leads + Tab)
Output Type: N-Channel
Mounting Type: Surface Mount
Number of Outputs: 1
Interface: Parallel
Switch Type: General Purpose
Operating Temperature: -40°C ~ 150°C (TJ)
Output Configuration: High Side
Input Type: Non-Inverting
Voltage - Load: 5V ~ 28V
Voltage - Supply (Vcc/Vdd): Not Required
Current - Output (Max): 30A
Ratio - Input:Output: 1:1
Supplier Device Package: PG-TO263-7-8
Grade: Automotive
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В кошику
од. на суму грн.
| BTS500151TAAATMA1 |
|
Виробник: Infineon Technologies
Description: IC PWR SWITCH N-CHAN 1:1 TO263-7
Packaging: Tape & Reel (TR)
Package / Case: TO-263-7, D2PAK (6 Leads + Tab)
Output Type: N-Channel
Mounting Type: Surface Mount
Number of Outputs: 1
Interface: On/Off
Switch Type: General Purpose
Operating Temperature: -40°C ~ 150°C (TJ)
Output Configuration: High Side
Input Type: Non-Inverting
Voltage - Load: 5.5V ~ 28V
Voltage - Supply (Vcc/Vdd): Not Required
Current - Output (Max): 33A
Ratio - Input:Output: 1:1
Supplier Device Package: PG-TO263-7-8
Fault Protection: Current Limiting (Fixed), Over Temperature, Over Voltage
Grade: Automotive
Qualification: AEC-Q100
Description: IC PWR SWITCH N-CHAN 1:1 TO263-7
Packaging: Tape & Reel (TR)
Package / Case: TO-263-7, D2PAK (6 Leads + Tab)
Output Type: N-Channel
Mounting Type: Surface Mount
Number of Outputs: 1
Interface: On/Off
Switch Type: General Purpose
Operating Temperature: -40°C ~ 150°C (TJ)
Output Configuration: High Side
Input Type: Non-Inverting
Voltage - Load: 5.5V ~ 28V
Voltage - Supply (Vcc/Vdd): Not Required
Current - Output (Max): 33A
Ratio - Input:Output: 1:1
Supplier Device Package: PG-TO263-7-8
Fault Protection: Current Limiting (Fixed), Over Temperature, Over Voltage
Grade: Automotive
Qualification: AEC-Q100
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| BTS500151TMAAKSA1 |
|
Виробник: Infineon Technologies
Description: IC PWR SWITCH N-CHAN 1:1 TO220-7
Packaging: Tube
Package / Case: TO-220-7 Formed Leads
Output Type: N-Channel
Mounting Type: Through Hole
Number of Outputs: 1
Interface: On/Off
Switch Type: General Purpose
Operating Temperature: -40°C ~ 150°C (TJ)
Output Configuration: High Side
Input Type: Non-Inverting
Voltage - Load: 5.5V ~ 28V
Voltage - Supply (Vcc/Vdd): Not Required
Current - Output (Max): 33A
Ratio - Input:Output: 1:1
Supplier Device Package: PG-TO220-7-232
Fault Protection: Current Limiting (Fixed), Over Temperature, Over Voltage
Grade: Automotive
Qualification: AEC-Q100
Description: IC PWR SWITCH N-CHAN 1:1 TO220-7
Packaging: Tube
Package / Case: TO-220-7 Formed Leads
Output Type: N-Channel
Mounting Type: Through Hole
Number of Outputs: 1
Interface: On/Off
Switch Type: General Purpose
Operating Temperature: -40°C ~ 150°C (TJ)
Output Configuration: High Side
Input Type: Non-Inverting
Voltage - Load: 5.5V ~ 28V
Voltage - Supply (Vcc/Vdd): Not Required
Current - Output (Max): 33A
Ratio - Input:Output: 1:1
Supplier Device Package: PG-TO220-7-232
Fault Protection: Current Limiting (Fixed), Over Temperature, Over Voltage
Grade: Automotive
Qualification: AEC-Q100
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Мінімальне замовлення: 500 шт
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| BTS500402SFAXUMA1 |
|
Виробник: Infineon Technologies
Description: IC PWR SWITCH N-CHAN 1:1 DSO-36
Features: Slew Rate Controlled
Packaging: Tape & Reel (TR)
Package / Case: 36-BSSOP (0.295", 7.50mm Width)
Output Type: N-Channel
Mounting Type: Surface Mount
Number of Outputs: 2
Interface: Parallel
Switch Type: General Purpose
Operating Temperature: -40°C ~ 150°C (TJ)
Output Configuration: High Side
Rds On (Typ): 4mOhm
Input Type: Non-Inverting
Voltage - Load: 6V ~ 28V
Voltage - Supply (Vcc/Vdd): 4.5V ~ 5.5V
Current - Output (Max): 11A
Ratio - Input:Output: 1:1
Supplier Device Package: PG-DSO-36-44
Fault Protection: Over Temperature, Over Voltage, Short Circuit
Part Status: Obsolete
Description: IC PWR SWITCH N-CHAN 1:1 DSO-36
Features: Slew Rate Controlled
Packaging: Tape & Reel (TR)
Package / Case: 36-BSSOP (0.295", 7.50mm Width)
Output Type: N-Channel
Mounting Type: Surface Mount
Number of Outputs: 2
Interface: Parallel
Switch Type: General Purpose
Operating Temperature: -40°C ~ 150°C (TJ)
Output Configuration: High Side
Rds On (Typ): 4mOhm
Input Type: Non-Inverting
Voltage - Load: 6V ~ 28V
Voltage - Supply (Vcc/Vdd): 4.5V ~ 5.5V
Current - Output (Max): 11A
Ratio - Input:Output: 1:1
Supplier Device Package: PG-DSO-36-44
Fault Protection: Over Temperature, Over Voltage, Short Circuit
Part Status: Obsolete
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| BTS50081EKBXUMA1 |
|
Виробник: Infineon Technologies
Description: IC PWR SWITCH N-CHAN 1:1 DSO-14
Packaging: Tape & Reel (TR)
Package / Case: 14-SOIC (0.154", 3.90mm Width) Exposed Pad
Output Type: N-Channel
Mounting Type: Surface Mount
Number of Outputs: 1
Interface: On/Off
Switch Type: General Purpose
Operating Temperature: -40°C ~ 150°C (TJ)
Output Configuration: High Side
Rds On (Typ): 8mOhm
Input Type: Non-Inverting
Voltage - Load: 5V ~ 28V
Voltage - Supply (Vcc/Vdd): Not Required
Current - Output (Max): 11A
Ratio - Input:Output: 1:1
Supplier Device Package: PG-DSO-14-47-EP
Fault Protection: Open Load Detect, Over Temperature, Over Voltage
Description: IC PWR SWITCH N-CHAN 1:1 DSO-14
Packaging: Tape & Reel (TR)
Package / Case: 14-SOIC (0.154", 3.90mm Width) Exposed Pad
Output Type: N-Channel
Mounting Type: Surface Mount
Number of Outputs: 1
Interface: On/Off
Switch Type: General Purpose
Operating Temperature: -40°C ~ 150°C (TJ)
Output Configuration: High Side
Rds On (Typ): 8mOhm
Input Type: Non-Inverting
Voltage - Load: 5V ~ 28V
Voltage - Supply (Vcc/Vdd): Not Required
Current - Output (Max): 11A
Ratio - Input:Output: 1:1
Supplier Device Package: PG-DSO-14-47-EP
Fault Protection: Open Load Detect, Over Temperature, Over Voltage
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Мінімальне замовлення: 2500 шт
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| BTS50101EKBXUMA1 |
|
Виробник: Infineon Technologies
Description: IC PWR SWITCH N-CHAN 1:1 DSO-14
Packaging: Tape & Reel (TR)
Package / Case: 14-SOIC (0.154", 3.90mm Width) Exposed Pad
Output Type: N-Channel
Mounting Type: Surface Mount
Number of Outputs: 1
Interface: On/Off
Switch Type: General Purpose
Operating Temperature: -40°C ~ 150°C (TJ)
Output Configuration: High Side
Rds On (Typ): 10mOhm
Input Type: Non-Inverting
Voltage - Load: 5V ~ 28V
Voltage - Supply (Vcc/Vdd): Not Required
Current - Output (Max): 10A
Ratio - Input:Output: 1:1
Supplier Device Package: PG-DSO-14-47-EP
Fault Protection: Current Limiting (Fixed), Open Load Detect, Over Temperature, Over Voltage
Part Status: Active
Description: IC PWR SWITCH N-CHAN 1:1 DSO-14
Packaging: Tape & Reel (TR)
Package / Case: 14-SOIC (0.154", 3.90mm Width) Exposed Pad
Output Type: N-Channel
Mounting Type: Surface Mount
Number of Outputs: 1
Interface: On/Off
Switch Type: General Purpose
Operating Temperature: -40°C ~ 150°C (TJ)
Output Configuration: High Side
Rds On (Typ): 10mOhm
Input Type: Non-Inverting
Voltage - Load: 5V ~ 28V
Voltage - Supply (Vcc/Vdd): Not Required
Current - Output (Max): 10A
Ratio - Input:Output: 1:1
Supplier Device Package: PG-DSO-14-47-EP
Fault Protection: Current Limiting (Fixed), Open Load Detect, Over Temperature, Over Voltage
Part Status: Active
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Мінімальне замовлення: 2500 шт
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| BTS50121EKBXUMA1 |
|
Виробник: Infineon Technologies
Description: IC PWR SWITCH N-CHAN 1:1 DSO-14
Packaging: Tape & Reel (TR)
Package / Case: 14-SOIC (0.154", 3.90mm Width) Exposed Pad
Output Type: N-Channel
Mounting Type: Surface Mount
Number of Outputs: 1
Interface: On/Off
Switch Type: General Purpose
Operating Temperature: -40°C ~ 150°C (TJ)
Output Configuration: High Side
Rds On (Typ): 12mOhm
Input Type: Non-Inverting
Voltage - Load: 5V ~ 28V
Voltage - Supply (Vcc/Vdd): Not Required
Current - Output (Max): 10A
Ratio - Input:Output: 1:1
Supplier Device Package: PG-DSO-14-47-EP
Fault Protection: Current Limiting (Fixed), Open Load Detect, Over Temperature, Over Voltage
Part Status: Active
Description: IC PWR SWITCH N-CHAN 1:1 DSO-14
Packaging: Tape & Reel (TR)
Package / Case: 14-SOIC (0.154", 3.90mm Width) Exposed Pad
Output Type: N-Channel
Mounting Type: Surface Mount
Number of Outputs: 1
Interface: On/Off
Switch Type: General Purpose
Operating Temperature: -40°C ~ 150°C (TJ)
Output Configuration: High Side
Rds On (Typ): 12mOhm
Input Type: Non-Inverting
Voltage - Load: 5V ~ 28V
Voltage - Supply (Vcc/Vdd): Not Required
Current - Output (Max): 10A
Ratio - Input:Output: 1:1
Supplier Device Package: PG-DSO-14-47-EP
Fault Protection: Current Limiting (Fixed), Open Load Detect, Over Temperature, Over Voltage
Part Status: Active
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Мінімальне замовлення: 2500 шт
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| BTS50161EKBXUMA1 |
|
Виробник: Infineon Technologies
Description: IC PWR SWITCH N-CHAN 1:1 DSO-14
Packaging: Tape & Reel (TR)
Package / Case: 14-SOIC (0.154", 3.90mm Width) Exposed Pad
Output Type: N-Channel
Mounting Type: Surface Mount
Number of Outputs: 1
Interface: On/Off
Switch Type: General Purpose
Operating Temperature: -40°C ~ 150°C (TJ)
Output Configuration: High Side
Rds On (Typ): 16mOhm
Input Type: Non-Inverting
Voltage - Load: 5V ~ 28V
Voltage - Supply (Vcc/Vdd): Not Required
Current - Output (Max): 8A
Ratio - Input:Output: 1:1
Supplier Device Package: PG-DSO-14-47-EP
Fault Protection: Current Limiting (Fixed), Open Load Detect, Over Temperature, Over Voltage
Description: IC PWR SWITCH N-CHAN 1:1 DSO-14
Packaging: Tape & Reel (TR)
Package / Case: 14-SOIC (0.154", 3.90mm Width) Exposed Pad
Output Type: N-Channel
Mounting Type: Surface Mount
Number of Outputs: 1
Interface: On/Off
Switch Type: General Purpose
Operating Temperature: -40°C ~ 150°C (TJ)
Output Configuration: High Side
Rds On (Typ): 16mOhm
Input Type: Non-Inverting
Voltage - Load: 5V ~ 28V
Voltage - Supply (Vcc/Vdd): Not Required
Current - Output (Max): 8A
Ratio - Input:Output: 1:1
Supplier Device Package: PG-DSO-14-47-EP
Fault Protection: Current Limiting (Fixed), Open Load Detect, Over Temperature, Over Voltage
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Мінімальне замовлення: 2500 шт
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| BTS54040LBEAUMA1 |
|
Виробник: Infineon Technologies
Description: IC PWR SWITCH N-CHAN 1:2 TSON-24
Description: IC PWR SWITCH N-CHAN 1:2 TSON-24
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Мінімальне замовлення: 2500 шт
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| BTS54040LBFAUMA1 |
|
Виробник: Infineon Technologies
Description: IC PWR SWITCH N-CHAN 1:2 TSON-24
Packaging: Tape & Reel (TR)
Package / Case: 24-PowerTDFN
Output Type: N-Channel
Mounting Type: Surface Mount
Number of Outputs: 4
Interface: SPI
Switch Type: General Purpose
Operating Temperature: -40°C ~ 150°C (TJ)
Output Configuration: High Side
Rds On (Typ): 39mOhm
Voltage - Load: 5.5V ~ 28V
Voltage - Supply (Vcc/Vdd): 3.8V ~ 5.5V
Current - Output (Max): 2A
Ratio - Input:Output: 1:2
Supplier Device Package: PG-TSON-24-3
Fault Protection: Current Limiting (Fixed), Over Temperature, Over Voltage
Grade: Automotive
Part Status: Discontinued at Digi-Key
Description: IC PWR SWITCH N-CHAN 1:2 TSON-24
Packaging: Tape & Reel (TR)
Package / Case: 24-PowerTDFN
Output Type: N-Channel
Mounting Type: Surface Mount
Number of Outputs: 4
Interface: SPI
Switch Type: General Purpose
Operating Temperature: -40°C ~ 150°C (TJ)
Output Configuration: High Side
Rds On (Typ): 39mOhm
Voltage - Load: 5.5V ~ 28V
Voltage - Supply (Vcc/Vdd): 3.8V ~ 5.5V
Current - Output (Max): 2A
Ratio - Input:Output: 1:2
Supplier Device Package: PG-TSON-24-3
Fault Protection: Current Limiting (Fixed), Over Temperature, Over Voltage
Grade: Automotive
Part Status: Discontinued at Digi-Key
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| BTS54220LBBAUMA1 |
|
Виробник: Infineon Technologies
Description: IC PWR SWITCH N-CHAN 1:1 TSON-24
Packaging: Tape & Reel (TR)
Package / Case: 24-PowerTDFN
Output Type: N-Channel
Mounting Type: Surface Mount
Number of Outputs: 4
Interface: SPI
Switch Type: General Purpose
Operating Temperature: -40°C ~ 150°C (TJ)
Output Configuration: High Side
Rds On (Typ): 9mOhm
Voltage - Load: 5.5V ~ 28V
Voltage - Supply (Vcc/Vdd): 3.8V ~ 5.5V
Current - Output (Max): 5A
Ratio - Input:Output: 1:1
Supplier Device Package: PG-TSON-24-3
Fault Protection: Current Limiting (Fixed), Over Temperature, Over Voltage
Grade: Automotive
Part Status: Discontinued at Digi-Key
Description: IC PWR SWITCH N-CHAN 1:1 TSON-24
Packaging: Tape & Reel (TR)
Package / Case: 24-PowerTDFN
Output Type: N-Channel
Mounting Type: Surface Mount
Number of Outputs: 4
Interface: SPI
Switch Type: General Purpose
Operating Temperature: -40°C ~ 150°C (TJ)
Output Configuration: High Side
Rds On (Typ): 9mOhm
Voltage - Load: 5.5V ~ 28V
Voltage - Supply (Vcc/Vdd): 3.8V ~ 5.5V
Current - Output (Max): 5A
Ratio - Input:Output: 1:1
Supplier Device Package: PG-TSON-24-3
Fault Protection: Current Limiting (Fixed), Over Temperature, Over Voltage
Grade: Automotive
Part Status: Discontinued at Digi-Key
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| BUZ31H3046XKSA1 |
|
Виробник: Infineon Technologies
Description: MOSFET N-CH 200V 14.5A TO262-3
Packaging: Tube
Package / Case: TO-262-3 Long Leads, I2PAK, TO-262AA
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 14.5A (Tc)
Rds On (Max) @ Id, Vgs: 200mOhm @ 9A, 5V
Power Dissipation (Max): 95W (Tc)
Vgs(th) (Max) @ Id: 4V @ 1mA
Supplier Device Package: PG-TO262-3-1
Part Status: Obsolete
Drive Voltage (Max Rds On, Min Rds On): 5V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 200 V
Input Capacitance (Ciss) (Max) @ Vds: 1120 pF @ 25 V
Description: MOSFET N-CH 200V 14.5A TO262-3
Packaging: Tube
Package / Case: TO-262-3 Long Leads, I2PAK, TO-262AA
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 14.5A (Tc)
Rds On (Max) @ Id, Vgs: 200mOhm @ 9A, 5V
Power Dissipation (Max): 95W (Tc)
Vgs(th) (Max) @ Id: 4V @ 1mA
Supplier Device Package: PG-TO262-3-1
Part Status: Obsolete
Drive Voltage (Max Rds On, Min Rds On): 5V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 200 V
Input Capacitance (Ciss) (Max) @ Vds: 1120 pF @ 25 V
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| ESD205B102ELE6327XTMA1 |
|
Виробник: Infineon Technologies
Description: TVS DIODE 5.5VWM 9V PGTSLP219
Packaging: Tape & Reel (TR)
Package / Case: 0402 (1006 Metric)
Mounting Type: Surface Mount
Type: Zener
Operating Temperature: -55°C ~ 125°C (TJ)
Applications: General Purpose
Capacitance @ Frequency: 5pF @ 1MHz
Current - Peak Pulse (10/1000µs): 2.5A (8/20µs)
Voltage - Reverse Standoff (Typ): 5.5V (Max)
Supplier Device Package: PG-TSLP-2-19
Bidirectional Channels: 1
Voltage - Breakdown (Min): 6V
Voltage - Clamping (Max) @ Ipp: 9V (Typ)
Power - Peak Pulse: 30W
Power Line Protection: No
Part Status: Not For New Designs
Description: TVS DIODE 5.5VWM 9V PGTSLP219
Packaging: Tape & Reel (TR)
Package / Case: 0402 (1006 Metric)
Mounting Type: Surface Mount
Type: Zener
Operating Temperature: -55°C ~ 125°C (TJ)
Applications: General Purpose
Capacitance @ Frequency: 5pF @ 1MHz
Current - Peak Pulse (10/1000µs): 2.5A (8/20µs)
Voltage - Reverse Standoff (Typ): 5.5V (Max)
Supplier Device Package: PG-TSLP-2-19
Bidirectional Channels: 1
Voltage - Breakdown (Min): 6V
Voltage - Clamping (Max) @ Ipp: 9V (Typ)
Power - Peak Pulse: 30W
Power Line Protection: No
Part Status: Not For New Designs
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Мінімальне замовлення: 15000 шт
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| ESD218B102ELE6327XTMA1 |
|
Виробник: Infineon Technologies
Description: TVS DIODE 24VWM 44.5VC PGTSLP220
Packaging: Tape & Reel (TR)
Package / Case: 0402 (1006 Metric)
Mounting Type: Surface Mount
Type: Zener
Operating Temperature: -55°C ~ 150°C (TJ)
Applications: General Purpose
Capacitance @ Frequency: 3pF @ 1MHz
Current - Peak Pulse (10/1000µs): 1.5A (8/20µs)
Voltage - Reverse Standoff (Typ): 24V (Max)
Supplier Device Package: PG-TSLP-2-20
Bidirectional Channels: 1
Voltage - Breakdown (Min): 24.3V
Voltage - Clamping (Max) @ Ipp: 44.5V
Power - Peak Pulse: 67W
Power Line Protection: No
Part Status: Obsolete
Description: TVS DIODE 24VWM 44.5VC PGTSLP220
Packaging: Tape & Reel (TR)
Package / Case: 0402 (1006 Metric)
Mounting Type: Surface Mount
Type: Zener
Operating Temperature: -55°C ~ 150°C (TJ)
Applications: General Purpose
Capacitance @ Frequency: 3pF @ 1MHz
Current - Peak Pulse (10/1000µs): 1.5A (8/20µs)
Voltage - Reverse Standoff (Typ): 24V (Max)
Supplier Device Package: PG-TSLP-2-20
Bidirectional Channels: 1
Voltage - Breakdown (Min): 24.3V
Voltage - Clamping (Max) @ Ipp: 44.5V
Power - Peak Pulse: 67W
Power Line Protection: No
Part Status: Obsolete
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| ICE2QR1065ZXKLA1 |
|
Виробник: Infineon Technologies
Description: IC OFFLINE SWITCH FLYBACK 7DIP
Packaging: Tube
Package / Case: 8-DIP (0.300", 7.62mm), 7 Leads
Mounting Type: Through Hole
Operating Temperature: -40°C ~ 150°C (TJ)
Duty Cycle: 50%
Frequency - Switching: 52kHz
Internal Switch(s): Yes
Voltage - Breakdown: 650V
Output Isolation: Isolated
Topology: Flyback
Voltage - Supply (Vcc/Vdd): 10.5V ~ 27V
Supplier Device Package: PG-DIP-7-1
Fault Protection: Current Limiting, Over Load, Over Temperature, Over Voltage
Voltage - Start Up: 18 V
Part Status: Obsolete
Power (Watts): 41 W
Description: IC OFFLINE SWITCH FLYBACK 7DIP
Packaging: Tube
Package / Case: 8-DIP (0.300", 7.62mm), 7 Leads
Mounting Type: Through Hole
Operating Temperature: -40°C ~ 150°C (TJ)
Duty Cycle: 50%
Frequency - Switching: 52kHz
Internal Switch(s): Yes
Voltage - Breakdown: 650V
Output Isolation: Isolated
Topology: Flyback
Voltage - Supply (Vcc/Vdd): 10.5V ~ 27V
Supplier Device Package: PG-DIP-7-1
Fault Protection: Current Limiting, Over Load, Over Temperature, Over Voltage
Voltage - Start Up: 18 V
Part Status: Obsolete
Power (Watts): 41 W
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| ICE2QR4765ZXKLA1 |
|
Виробник: Infineon Technologies
Description: IC OFFLINE SWITCH FLYBACK 7DIP
Packaging: Tube
Package / Case: 8-DIP (0.300", 7.62mm), 7 Leads
Mounting Type: Through Hole
Operating Temperature: -40°C ~ 150°C (TJ)
Duty Cycle: 50%
Frequency - Switching: 52kHz
Internal Switch(s): Yes
Voltage - Breakdown: 650V
Output Isolation: Isolated
Topology: Flyback
Voltage - Supply (Vcc/Vdd): 10.5V ~ 27V
Supplier Device Package: PG-DIP-7-1
Fault Protection: Current Limiting, Over Load, Over Temperature, Over Voltage
Voltage - Start Up: 18 V
Part Status: Active
Power (Watts): 31 W
Description: IC OFFLINE SWITCH FLYBACK 7DIP
Packaging: Tube
Package / Case: 8-DIP (0.300", 7.62mm), 7 Leads
Mounting Type: Through Hole
Operating Temperature: -40°C ~ 150°C (TJ)
Duty Cycle: 50%
Frequency - Switching: 52kHz
Internal Switch(s): Yes
Voltage - Breakdown: 650V
Output Isolation: Isolated
Topology: Flyback
Voltage - Supply (Vcc/Vdd): 10.5V ~ 27V
Supplier Device Package: PG-DIP-7-1
Fault Protection: Current Limiting, Over Load, Over Temperature, Over Voltage
Voltage - Start Up: 18 V
Part Status: Active
Power (Watts): 31 W
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| ICE2QR4780ZXKLA1 |
|
Виробник: Infineon Technologies
Description: IC OFFLINE SWITCH FLYBACK 7DIP
Packaging: Tube
Package / Case: 8-DIP (0.300", 7.62mm), 7 Leads
Mounting Type: Through Hole
Operating Temperature: -40°C ~ 150°C (TJ)
Duty Cycle: 50%
Frequency - Switching: 52kHz
Internal Switch(s): Yes
Voltage - Breakdown: 800V
Output Isolation: Isolated
Topology: Flyback
Voltage - Supply (Vcc/Vdd): 10.5V ~ 27V
Supplier Device Package: PG-DIP-7-1
Fault Protection: Current Limiting, Over Load, Over Temperature, Over Voltage
Voltage - Start Up: 18 V
Part Status: Obsolete
Power (Watts): 39 W
Description: IC OFFLINE SWITCH FLYBACK 7DIP
Packaging: Tube
Package / Case: 8-DIP (0.300", 7.62mm), 7 Leads
Mounting Type: Through Hole
Operating Temperature: -40°C ~ 150°C (TJ)
Duty Cycle: 50%
Frequency - Switching: 52kHz
Internal Switch(s): Yes
Voltage - Breakdown: 800V
Output Isolation: Isolated
Topology: Flyback
Voltage - Supply (Vcc/Vdd): 10.5V ~ 27V
Supplier Device Package: PG-DIP-7-1
Fault Protection: Current Limiting, Over Load, Over Temperature, Over Voltage
Voltage - Start Up: 18 V
Part Status: Obsolete
Power (Watts): 39 W
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| ICE3AR0680VJZXKLA1 |
|
Виробник: Infineon Technologies
Description: IC OFFLINE SWITCH FLYBACK 7DIP
Packaging: Tube
Package / Case: 8-DIP (0.300", 7.62mm), 7 Leads
Mounting Type: Through Hole
Operating Temperature: -40°C ~ 150°C (TJ)
Duty Cycle: 75%
Frequency - Switching: 100kHz
Internal Switch(s): Yes
Voltage - Breakdown: 800V
Output Isolation: Isolated
Topology: Flyback
Voltage - Supply (Vcc/Vdd): 10.5V ~ 27V
Supplier Device Package: PG-DIP-7-1
Fault Protection: Over Load, Over Temperature, Over Voltage
Voltage - Start Up: 17 V
Part Status: Active
Power (Watts): 82 W
Description: IC OFFLINE SWITCH FLYBACK 7DIP
Packaging: Tube
Package / Case: 8-DIP (0.300", 7.62mm), 7 Leads
Mounting Type: Through Hole
Operating Temperature: -40°C ~ 150°C (TJ)
Duty Cycle: 75%
Frequency - Switching: 100kHz
Internal Switch(s): Yes
Voltage - Breakdown: 800V
Output Isolation: Isolated
Topology: Flyback
Voltage - Supply (Vcc/Vdd): 10.5V ~ 27V
Supplier Device Package: PG-DIP-7-1
Fault Protection: Over Load, Over Temperature, Over Voltage
Voltage - Start Up: 17 V
Part Status: Active
Power (Watts): 82 W
на замовлення 120 шт:
термін постачання 21-31 дні (днів)
| Кількість | Ціна без ПДВ |
|---|---|
| 2+ | 212.58 грн |
| 10+ | 153.42 грн |
| 50+ | 132.87 грн |
| 100+ | 118.71 грн |
| ICE3AR10080JZXKLA1 |
|
Виробник: Infineon Technologies
Description: IC OFFLINE SWITCH FLYBACK 7DIP
Packaging: Tube
Package / Case: 8-DIP (0.300", 7.62mm), 7 Leads
Mounting Type: Through Hole
Operating Temperature: -40°C ~ 150°C (TJ)
Duty Cycle: 75%
Frequency - Switching: 100kHz
Internal Switch(s): Yes
Voltage - Breakdown: 800V
Output Isolation: Isolated
Topology: Flyback
Voltage - Supply (Vcc/Vdd): 10.5V ~ 27V
Supplier Device Package: PG-DIP-7-1
Fault Protection: Over Load, Over Temperature, Over Voltage
Voltage - Start Up: 17 V
Part Status: Active
Power (Watts): 22 W
Description: IC OFFLINE SWITCH FLYBACK 7DIP
Packaging: Tube
Package / Case: 8-DIP (0.300", 7.62mm), 7 Leads
Mounting Type: Through Hole
Operating Temperature: -40°C ~ 150°C (TJ)
Duty Cycle: 75%
Frequency - Switching: 100kHz
Internal Switch(s): Yes
Voltage - Breakdown: 800V
Output Isolation: Isolated
Topology: Flyback
Voltage - Supply (Vcc/Vdd): 10.5V ~ 27V
Supplier Device Package: PG-DIP-7-1
Fault Protection: Over Load, Over Temperature, Over Voltage
Voltage - Start Up: 17 V
Part Status: Active
Power (Watts): 22 W
на замовлення 678 шт:
термін постачання 21-31 дні (днів)
| Кількість | Ціна без ПДВ |
|---|---|
| 3+ | 119.05 грн |
| 10+ | 84.04 грн |
| 25+ | 76.43 грн |
| 100+ | 63.89 грн |
| 250+ | 60.13 грн |
| 500+ | 57.87 грн |
| ICE3AR4780CJZXKLA1 |
|
Виробник: Infineon Technologies
Description: IC OFFLINE SWITCH FLYBACK 7DIP
Packaging: Tube
Package / Case: 8-DIP (0.300", 7.62mm), 7 Leads
Mounting Type: Through Hole
Operating Temperature: -40°C ~ 150°C (TJ)
Duty Cycle: 75%
Frequency - Switching: 100kHz
Internal Switch(s): Yes
Voltage - Breakdown: 800V
Output Isolation: Isolated
Topology: Flyback
Voltage - Supply (Vcc/Vdd): 10.5V ~ 27V
Supplier Device Package: PG-DIP-7-1
Fault Protection: Over Load, Over Temperature, Over Voltage
Voltage - Start Up: 17 V
Part Status: Active
Power (Watts): 31 W
Description: IC OFFLINE SWITCH FLYBACK 7DIP
Packaging: Tube
Package / Case: 8-DIP (0.300", 7.62mm), 7 Leads
Mounting Type: Through Hole
Operating Temperature: -40°C ~ 150°C (TJ)
Duty Cycle: 75%
Frequency - Switching: 100kHz
Internal Switch(s): Yes
Voltage - Breakdown: 800V
Output Isolation: Isolated
Topology: Flyback
Voltage - Supply (Vcc/Vdd): 10.5V ~ 27V
Supplier Device Package: PG-DIP-7-1
Fault Protection: Over Load, Over Temperature, Over Voltage
Voltage - Start Up: 17 V
Part Status: Active
Power (Watts): 31 W
товару немає в наявності
Мінімальне замовлення: 2000 шт
В кошику
од. на суму грн.
| ICE3BR0680JZXKLA1 |
|
Виробник: Infineon Technologies
Description: IC OFFLINE SWITCH FLYBACK 7DIP
Packaging: Tube
Package / Case: 8-DIP (0.300", 7.62mm), 7 Leads
Mounting Type: Through Hole
Operating Temperature: -40°C ~ 150°C (TJ)
Duty Cycle: 75%
Frequency - Switching: 65kHz
Internal Switch(s): Yes
Voltage - Breakdown: 800V
Output Isolation: Isolated
Topology: Flyback
Voltage - Supply (Vcc/Vdd): 10.5V ~ 27V
Supplier Device Package: PG-DIP-7-1
Fault Protection: Over Load, Over Temperature, Over Voltage
Voltage - Start Up: 17 V
Part Status: Active
Power (Watts): 82 W
Description: IC OFFLINE SWITCH FLYBACK 7DIP
Packaging: Tube
Package / Case: 8-DIP (0.300", 7.62mm), 7 Leads
Mounting Type: Through Hole
Operating Temperature: -40°C ~ 150°C (TJ)
Duty Cycle: 75%
Frequency - Switching: 65kHz
Internal Switch(s): Yes
Voltage - Breakdown: 800V
Output Isolation: Isolated
Topology: Flyback
Voltage - Supply (Vcc/Vdd): 10.5V ~ 27V
Supplier Device Package: PG-DIP-7-1
Fault Protection: Over Load, Over Temperature, Over Voltage
Voltage - Start Up: 17 V
Part Status: Active
Power (Watts): 82 W
на замовлення 1837 шт:
термін постачання 21-31 дні (днів)
| Кількість | Ціна без ПДВ |
|---|---|
| 2+ | 199.44 грн |
| 10+ | 143.37 грн |
| 50+ | 123.99 грн |
| 100+ | 110.73 грн |
| 250+ | 104.77 грн |
| 500+ | 101.18 грн |
| 1000+ | 96.61 грн |
| ICE3BR4765JGXUMA1 |
|
Виробник: Infineon Technologies
Description: IC OFFLINE SWITCH FLYBACK 12DSO
Packaging: Tape & Reel (TR)
Package / Case: 16-SOIC (0.154", 3.90mm Width), 12 Leads
Mounting Type: Surface Mount
Operating Temperature: -40°C ~ 150°C (TJ)
Duty Cycle: 75%
Frequency - Switching: 65kHz
Internal Switch(s): Yes
Voltage - Breakdown: 650V
Output Isolation: Isolated
Topology: Flyback
Voltage - Supply (Vcc/Vdd): 10.5V ~ 27V
Supplier Device Package: PG-DSO-12-10
Fault Protection: Current Limiting, Over Load, Over Temperature, Over Voltage
Voltage - Start Up: 18 V
Part Status: Not For New Designs
Power (Watts): 24 W
Description: IC OFFLINE SWITCH FLYBACK 12DSO
Packaging: Tape & Reel (TR)
Package / Case: 16-SOIC (0.154", 3.90mm Width), 12 Leads
Mounting Type: Surface Mount
Operating Temperature: -40°C ~ 150°C (TJ)
Duty Cycle: 75%
Frequency - Switching: 65kHz
Internal Switch(s): Yes
Voltage - Breakdown: 650V
Output Isolation: Isolated
Topology: Flyback
Voltage - Supply (Vcc/Vdd): 10.5V ~ 27V
Supplier Device Package: PG-DSO-12-10
Fault Protection: Current Limiting, Over Load, Over Temperature, Over Voltage
Voltage - Start Up: 18 V
Part Status: Not For New Designs
Power (Watts): 24 W
товару немає в наявності
Мінімальне замовлення: 2500 шт
В кошику
од. на суму грн.
| ICE3PCS02GXUMA1 |
|
Виробник: Infineon Technologies
Description: IC PFC CCM PG-DSO-8
Packaging: Tape & Reel (TR)
Package / Case: 8-SOIC (0.154", 3.90mm Width)
Mounting Type: Surface Mount
Operating Temperature: -25°C ~ 125°C
Voltage - Supply: 11V ~ 25V
Frequency - Switching: 21kHz ~ 100kHz
Mode: Continuous Conduction (CCM)
Supplier Device Package: PG-DSO-8
Part Status: Active
Current - Startup: 380 µA
Description: IC PFC CCM PG-DSO-8
Packaging: Tape & Reel (TR)
Package / Case: 8-SOIC (0.154", 3.90mm Width)
Mounting Type: Surface Mount
Operating Temperature: -25°C ~ 125°C
Voltage - Supply: 11V ~ 25V
Frequency - Switching: 21kHz ~ 100kHz
Mode: Continuous Conduction (CCM)
Supplier Device Package: PG-DSO-8
Part Status: Active
Current - Startup: 380 µA
на замовлення 12500 шт:
термін постачання 21-31 дні (днів)
| Кількість | Ціна без ПДВ |
|---|---|
| 2500+ | 47.86 грн |
| 5000+ | 45.04 грн |
| 7500+ | 44.51 грн |
| 12500+ | 41.22 грн |
| IDH02G120C5XKSA1 |
|
Виробник: Infineon Technologies
Description: DIODE SIL CARB 1200V 2A PGTO2201
Packaging: Tube
Package / Case: TO-220-2
Mounting Type: Through Hole
Speed: Zero Recovery Time > 500mA (Io)
Reverse Recovery Time (trr): 0 ns
Technology: SiC (Silicon Carbide) Schottky
Capacitance @ Vr, F: 182pF @ 1V, 1MHz
Current - Average Rectified (Io): 2A
Supplier Device Package: PG-TO220-2-1
Operating Temperature - Junction: 175°C (Max)
Voltage - DC Reverse (Vr) (Max): 1200 V
Voltage - Forward (Vf) (Max) @ If: 1.65 V @ 2 A
Current - Reverse Leakage @ Vr: 18 µA @ 1200 V
Description: DIODE SIL CARB 1200V 2A PGTO2201
Packaging: Tube
Package / Case: TO-220-2
Mounting Type: Through Hole
Speed: Zero Recovery Time > 500mA (Io)
Reverse Recovery Time (trr): 0 ns
Technology: SiC (Silicon Carbide) Schottky
Capacitance @ Vr, F: 182pF @ 1V, 1MHz
Current - Average Rectified (Io): 2A
Supplier Device Package: PG-TO220-2-1
Operating Temperature - Junction: 175°C (Max)
Voltage - DC Reverse (Vr) (Max): 1200 V
Voltage - Forward (Vf) (Max) @ If: 1.65 V @ 2 A
Current - Reverse Leakage @ Vr: 18 µA @ 1200 V
товару немає в наявності
В кошику
од. на суму грн.
| IDH02G65C5XKSA1 |
|
Виробник: Infineon Technologies
Description: DIODE SIL CARB 650V 2A PGTO2201
Packaging: Tube
Package / Case: TO-220-2
Mounting Type: Through Hole
Speed: No Recovery Time > 500mA (Io)
Reverse Recovery Time (trr): 0 ns
Technology: SiC (Silicon Carbide) Schottky
Capacitance @ Vr, F: 70pF @ 1V, 1MHz
Current - Average Rectified (Io): 2A
Supplier Device Package: PG-TO220-2-1
Operating Temperature - Junction: -55°C ~ 175°C
Part Status: Discontinued at Digi-Key
Voltage - DC Reverse (Vr) (Max): 650 V
Voltage - Forward (Vf) (Max) @ If: 1.7 V @ 2 A
Current - Reverse Leakage @ Vr: 35 µA @ 650 V
Description: DIODE SIL CARB 650V 2A PGTO2201
Packaging: Tube
Package / Case: TO-220-2
Mounting Type: Through Hole
Speed: No Recovery Time > 500mA (Io)
Reverse Recovery Time (trr): 0 ns
Technology: SiC (Silicon Carbide) Schottky
Capacitance @ Vr, F: 70pF @ 1V, 1MHz
Current - Average Rectified (Io): 2A
Supplier Device Package: PG-TO220-2-1
Operating Temperature - Junction: -55°C ~ 175°C
Part Status: Discontinued at Digi-Key
Voltage - DC Reverse (Vr) (Max): 650 V
Voltage - Forward (Vf) (Max) @ If: 1.7 V @ 2 A
Current - Reverse Leakage @ Vr: 35 µA @ 650 V
товару немає в наявності
В кошику
од. на суму грн.