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TLE49614MXTMA1 TLE49614MXTMA1 Infineon Technologies Infineon-TLE4961_4M-DS-v01_00-en.pdf?fileId=db3a304340155f3d0140394b4fd67ddc Description: MAG SWITCH IC HALL EFF SOT23-3
Packaging: Tape & Reel (TR)
Grade: Automotive
Qualification: AEC-Q100
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CY62128EV30LL-45SXIT CY62128EV30LL-45SXIT Infineon Technologies Infineon-CY62128EV30_MoBL_1_Mbit_(128K_X_8)_Static_RAM-DataSheet-v17_00-EN.pdf?fileId=8ac78c8c7d0d8da4017d0ebe867f322f&utm_source=cypress&utm_medium=referral&utm_campaign=202110_globe_en_all_integration-files Description: IC SRAM 1MBIT PARALLEL 32SOIC
Packaging: Tape & Reel (TR)
Package / Case: 32-SOIC (0.445", 11.30mm Width)
Mounting Type: Surface Mount
Memory Size: 1Mbit
Memory Type: Volatile
Operating Temperature: -40°C ~ 85°C (TA)
Voltage - Supply: 2.2V ~ 3.6V
Technology: SRAM - Asynchronous
Memory Format: SRAM
Supplier Device Package: 32-SOIC
Write Cycle Time - Word, Page: 45ns
Memory Interface: Parallel
Access Time: 45 ns
Memory Organization: 128K x 8
DigiKey Programmable: Not Verified
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CY62128EV30LL-45SXIT CY62128EV30LL-45SXIT Infineon Technologies Infineon-CY62128EV30_MoBL_1_Mbit_(128K_X_8)_Static_RAM-DataSheet-v17_00-EN.pdf?fileId=8ac78c8c7d0d8da4017d0ebe867f322f&utm_source=cypress&utm_medium=referral&utm_campaign=202110_globe_en_all_integration-files Description: IC SRAM 1MBIT PARALLEL 32SOIC
Packaging: Cut Tape (CT)
Package / Case: 32-SOIC (0.445", 11.30mm Width)
Mounting Type: Surface Mount
Memory Size: 1Mbit
Memory Type: Volatile
Operating Temperature: -40°C ~ 85°C (TA)
Voltage - Supply: 2.2V ~ 3.6V
Technology: SRAM - Asynchronous
Memory Format: SRAM
Supplier Device Package: 32-SOIC
Write Cycle Time - Word, Page: 45ns
Memory Interface: Parallel
Access Time: 45 ns
Memory Organization: 128K x 8
DigiKey Programmable: Not Verified
на замовлення 559 шт:
термін постачання 21-31 дні (днів)
2+296.04 грн
10+252.66 грн
25+240.91 грн
50+218.10 грн
100+210.39 грн
250+200.61 грн
500+190.33 грн
Мінімальне замовлення: 2
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CY62128DV30LL-70ZXI CY62128DV30LL-70ZXI Infineon Technologies CY62128DV30%20Rev2006.pdf Description: IC SRAM 1MBIT PARALLEL 32TSOP I
Packaging: Tube
Package / Case: 32-TFSOP (0.724", 18.40mm Width)
Mounting Type: Surface Mount
Memory Size: 1Mbit
Memory Type: Volatile
Operating Temperature: -40°C ~ 85°C (TA)
Voltage - Supply: 2.2V ~ 3.6V
Technology: SRAM - Asynchronous
Memory Format: SRAM
Supplier Device Package: 32-TSOP I
Write Cycle Time - Word, Page: 70ns
Memory Interface: Parallel
Access Time: 70 ns
Memory Organization: 128K x 8
DigiKey Programmable: Not Verified
на замовлення 891 шт:
термін постачання 21-31 дні (днів)
128+172.06 грн
Мінімальне замовлення: 128
В кошику  од. на суму  грн.
CY62128DV30LL-70ZXI CY62128DV30LL-70ZXI Infineon Technologies CY62128DV30%20Rev2006.pdf Description: IC SRAM 1MBIT PARALLEL 32TSOP I
Packaging: Tube
Package / Case: 32-TFSOP (0.724", 18.40mm Width)
Mounting Type: Surface Mount
Memory Size: 1Mbit
Memory Type: Volatile
Operating Temperature: -40°C ~ 85°C (TA)
Voltage - Supply: 2.2V ~ 3.6V
Technology: SRAM - Asynchronous
Memory Format: SRAM
Supplier Device Package: 32-TSOP I
Write Cycle Time - Word, Page: 70ns
Memory Interface: Parallel
Access Time: 70 ns
Memory Organization: 128K x 8
DigiKey Programmable: Not Verified
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IM66D120AXTMA1 IM66D120AXTMA1 Infineon Technologies Infineon-IM66D120A-DataSheet-v01_00-EN.pdf?fileId=8ac78c8c8c3de074018c63d5dd683a35 Description: MEMS GROWTH
Packaging: Tape & Reel (TR)
Output Type: Digital, PDM
Size / Dimension: 0.138" L x 0.104" W (3.50mm x 2.65mm)
Sensitivity: -26dB ±1dB @ 94dB SPL
Shape: Rectangular
Type: MEMS (Silicon)
S/N Ratio: 66dB
Termination: Solder Pads
Direction: Omnidirectional
Port Location: Bottom
Height (Max): 0.039" (0.99mm)
Voltage - Rated: 1.8 V
Current - Supply: 1.4 mA
Voltage Range: 1.62 V ~ 3.6 V
Frequency Range: 10 Hz ~ 10 kHz
на замовлення 5000 шт:
термін постачання 21-31 дні (днів)
5000+76.76 грн
Мінімальне замовлення: 5000
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IM66D120AXTMA1 IM66D120AXTMA1 Infineon Technologies Infineon-IM66D120A-DataSheet-v01_00-EN.pdf?fileId=8ac78c8c8c3de074018c63d5dd683a35 Description: MEMS GROWTH
Packaging: Cut Tape (CT)
Output Type: Digital, PDM
Size / Dimension: 0.138" L x 0.104" W (3.50mm x 2.65mm)
Sensitivity: -26dB ±1dB @ 94dB SPL
Shape: Rectangular
Type: MEMS (Silicon)
S/N Ratio: 66dB
Termination: Solder Pads
Direction: Omnidirectional
Port Location: Bottom
Height (Max): 0.039" (0.99mm)
Voltage - Rated: 1.8 V
Current - Supply: 1.4 mA
Voltage Range: 1.62 V ~ 3.6 V
Frequency Range: 10 Hz ~ 10 kHz
на замовлення 5064 шт:
термін постачання 21-31 дні (днів)
3+152.80 грн
10+109.05 грн
25+99.41 грн
100+83.33 грн
250+78.58 грн
500+75.71 грн
1000+72.15 грн
2500+69.71 грн
Мінімальне замовлення: 3
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S6E2C39J0AGB1000A S6E2C39J0AGB1000A Infineon Technologies download Description: IC MCU 32BIT 1.5MB FLASH 192FBGA
Packaging: Tray
Package / Case: 192-LFBGA
Mounting Type: Surface Mount
Speed: 200MHz
Program Memory Size: 1.5MB (1.5M x 8)
RAM Size: 192K x 8
Operating Temperature: -40°C ~ 125°C (TA)
Oscillator Type: Internal
Program Memory Type: FLASH
Core Processor: ARM® Cortex®-M4F
Data Converters: A/D 32x12b; D/A 2x12b
Core Size: 32-Bit Single-Core
Voltage - Supply (Vcc/Vdd): 2.7V ~ 5.5V
Connectivity: CSIO, EBI/EMI, I2C, LINbus, SD, SPI, UART/USART, USB
Peripherals: DMA, I2S, LVD, POR, PWM, WDT
Supplier Device Package: 192-FBGA (12x12)
Number of I/O: 152
DigiKey Programmable: Not Verified
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S6E2C38H0AGV2000A S6E2C38H0AGV2000A Infineon Technologies download Description: IC MCU 32BIT 1MB FLASH 144LQFP
Packaging: Tray
Package / Case: 144-LQFP
Mounting Type: Surface Mount
Speed: 200MHz
Program Memory Size: 1MB (1M x 8)
RAM Size: 128K x 8
Operating Temperature: -40°C ~ 125°C (TA)
Oscillator Type: Internal
Program Memory Type: FLASH
Core Processor: ARM® Cortex®-M4F
Data Converters: A/D 24x12b; D/A 2x12b
Core Size: 32-Bit Single-Core
Voltage - Supply (Vcc/Vdd): 2.7V ~ 5.5V
Connectivity: CSIO, EBI/EMI, I2C, LINbus, SD, UART/USART, USB
Peripherals: DMA, LVD, POR, PWM, WDT
Supplier Device Package: 144-LQFP (20x20)
Number of I/O: 120
DigiKey Programmable: Not Verified
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IPSA70R1K2P7SAKMA1 IPSA70R1K2P7SAKMA1 Infineon Technologies Infineon-IPSA70R1K2P7S-DS-v02_00-EN.pdf?fileId=5546d4625f2e26bc015f4d40e16a1340 Description: MOSFET N-CH 700V 4.5A TO251-3
Packaging: Tube
Package / Case: TO-251-3 Short Leads, IPak, TO-251AA
Mounting Type: Through Hole
Operating Temperature: -40°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 4.5A (Tc)
Rds On (Max) @ Id, Vgs: 1.2Ohm @ 900mA, 10V
Power Dissipation (Max): 25W (Tc)
Vgs(th) (Max) @ Id: 3.5V @ 40µA
Supplier Device Package: PG-TO251-3
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±16V
Drain to Source Voltage (Vdss): 700 V
Gate Charge (Qg) (Max) @ Vgs: 4.8 nC @ 400 V
Input Capacitance (Ciss) (Max) @ Vds: 174 pF @ 400 V
на замовлення 2 шт:
термін постачання 21-31 дні (днів)
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62-0095PBF Infineon Technologies fundamentals-of-power-semiconductors Description: MOSFET N-CH 20V 10A/12A 8SOIC
Packaging: Tube
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 10A (Ta), 12A (Tc)
Rds On (Max) @ Id, Vgs: 13.4mOhm @ 10A, 10V
Power Dissipation (Max): 2W
Vgs(th) (Max) @ Id: 2.55V @ 250µA
Drive Voltage (Max Rds On, Min Rds On): 10V
Drain to Source Voltage (Vdss): 20 V
Gate Charge (Qg) (Max) @ Vgs: 11 nC @ 4.5 V
Input Capacitance (Ciss) (Max) @ Vds: 900 pF @ 10 V
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D2200N24TVFXPSA1 D2200N24TVFXPSA1 Infineon Technologies D2200N.pdf Description: DIODE GEN PURP 2.4KV 2200A
Packaging: Tray
Package / Case: DO-200AC, K-PUK
Mounting Type: Clamp On
Speed: Standard Recovery >500ns, > 200mA (Io)
Technology: Standard
Current - Average Rectified (Io): 2200A
Operating Temperature - Junction: -40°C ~ 160°C
Voltage - DC Reverse (Vr) (Max): 2400 V
Voltage - Forward (Vf) (Max) @ If: 1.2 V @ 2000 A
Current - Reverse Leakage @ Vr: 150 mA @ 2400 V
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BSM15GD120DN2BOSA1 Infineon Technologies Description: IGBT MOD 1200V 25A 145W
Packaging: Tray
Package / Case: Module
Mounting Type: Chassis Mount
Input: Standard
Configuration: Three Phase Inverter
Operating Temperature: 150°C (TJ)
Vce(on) (Max) @ Vge, Ic: 3V @ 15V, 15A
NTC Thermistor: No
Supplier Device Package: Module
Current - Collector (Ic) (Max): 25 A
Voltage - Collector Emitter Breakdown (Max): 1200 V
Power - Max: 145 W
Current - Collector Cutoff (Max): 500 µA
Input Capacitance (Cies) @ Vce: 100 pF @ 25 V
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IGB15N120S7ATMA1 IGB15N120S7ATMA1 Infineon Technologies Infineon-IGB15N120S7-DataSheet-v01_00-EN.pdf?fileId=8ac78c8c914a3ac801917eb7408c326a Description: IGBT TRENCH FS 1200V 34A TO263-3
Packaging: Cut Tape (CT)
Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
Mounting Type: Surface Mount
Operating Temperature: -40°C ~ 150°C (TJ)
Input Type: Standard
Vce(on) (Max) @ Vge, Ic: 2V @ 15V, 15A
Supplier Device Package: PG-TO263-3-2
IGBT Type: Trench Field Stop
Td (on/off) @ 25°C: 16ns/156ns
Switching Energy: 900µJ (on), 680µJ (off)
Test Condition: 600V, 15A, 10Ohm, 15V
Gate Charge: 97 nC
Current - Collector (Ic) (Max): 34 A
Voltage - Collector Emitter Breakdown (Max): 1200 V
Current - Collector Pulsed (Icm): 45 A
Power - Max: 141 W
на замовлення 740 шт:
термін постачання 21-31 дні (днів)
1+387.56 грн
10+248.45 грн
100+177.64 грн
500+160.00 грн
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BGSX24M2U16E6327XTSA1 BGSX24M2U16E6327XTSA1 Infineon Technologies Infineon-BGSX24M2U16-DataSheet-v01_00-EN.pdf?fileId=8ac78c8c8d2fe47b018dd17eaaed054c Description: ANTENNA DEVICES
Features: DC Blocked
Packaging: Tape & Reel (TR)
Package / Case: 16-UFLGA Exposed Pad
Impedance: 50Ohm
Mounting Type: Surface Mount
Circuit: DP4T
RF Type: 5G, LTE
Operating Temperature: -40°C ~ 85°C
Voltage - Supply: 1.1V ~ 1.3V, 1.65V ~ 1.95V
Insertion Loss: 1.14dB
Frequency Range: 400MHz ~ 7.125GHz
Topology: Absorptive
Test Frequency: 7.125GHz
Isolation: 35dB
Supplier Device Package: PG-ULGA-16-6
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AUIRFSL8408 AUIRFSL8408 Infineon Technologies AUIRFS%28L%298408.pdf Description: MOSFET N-CH 40V 195A TO262
Packaging: Tube
Package / Case: TO-262-3 Long Leads, I2PAK, TO-262AA
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 195A (Tc)
Rds On (Max) @ Id, Vgs: 1.6mOhm @ 100A, 10V
Power Dissipation (Max): 294W (Tc)
Vgs(th) (Max) @ Id: 3.9V @ 250µA
Supplier Device Package: TO-262
Drain to Source Voltage (Vdss): 40 V
Gate Charge (Qg) (Max) @ Vgs: 324 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 10820 pF @ 25 V
на замовлення 450 шт:
термін постачання 21-31 дні (днів)
176+125.53 грн
Мінімальне замовлення: 176
В кошику  од. на суму  грн.
ROTATEKNOB3D2GOKITTOBO1 ROTATEKNOB3D2GOKITTOBO1 Infineon Technologies ROTATEKNOB3D2GOKITTOBO1_Web.pdf Description: ROTATE & PUSH BUTTON CONTROL ELE
Packaging: Bulk
For Use With/Related Products: 3D Magnetic Sensor
Accessory Type: Knob
на замовлення 6 шт:
термін постачання 21-31 дні (днів)
1+2042.05 грн
В кошику  од. на суму  грн.
IRGP4760DPBF IRGP4760DPBF Infineon Technologies IRGP4760D%28-E%29PbF.pdf Description: IGBT 650V TO-247
Packaging: Tube
Package / Case: TO-247-3
Mounting Type: Through Hole
Operating Temperature: -40°C ~ 175°C (TJ)
Input Type: Standard
Reverse Recovery Time (trr): 170 ns
Vce(on) (Max) @ Vge, Ic: 2V @ 15V, 48A
Supplier Device Package: TO-247AC
Td (on/off) @ 25°C: 70ns/140ns
Switching Energy: 1.7mJ (on), 1mJ (off)
Test Condition: 400V, 48A, 10Ohm, 15V
Gate Charge: 145 nC
Current - Collector (Ic) (Max): 90 A
Voltage - Collector Emitter Breakdown (Max): 650 V
Current - Collector Pulsed (Icm): 144 A
Power - Max: 325 W
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IRGP4760-EPBF IRGP4760-EPBF Infineon Technologies IRGP4760%28-E%29PbF.pdf Description: IGBT 650V TO-247
Packaging: Tube
Package / Case: TO-247-3
Mounting Type: Through Hole
Operating Temperature: -40°C ~ 175°C (TJ)
Input Type: Standard
Vce(on) (Max) @ Vge, Ic: 2V @ 15V, 48A
Supplier Device Package: TO-247AD
Td (on/off) @ 25°C: 70ns/140ns
Switching Energy: 1.7mJ (on), 1mJ (off)
Test Condition: 400V, 48A, 10Ohm, 15V
Gate Charge: 145 nC
Current - Collector (Ic) (Max): 90 A
Voltage - Collector Emitter Breakdown (Max): 650 V
Current - Collector Pulsed (Icm): 144 A
Power - Max: 325 W
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IRGP4760PBF IRGP4760PBF Infineon Technologies IRGP4760%28-E%29PbF.pdf Description: IGBT 650V TO-247
Packaging: Tube
Package / Case: TO-247-3
Mounting Type: Through Hole
Operating Temperature: -40°C ~ 175°C (TJ)
Input Type: Standard
Vce(on) (Max) @ Vge, Ic: 2V @ 15V, 48A
Supplier Device Package: TO-247AC
Td (on/off) @ 25°C: 70ns/140ns
Switching Energy: 1.7mJ (on), 1mJ (off)
Test Condition: 400V, 48A, 10Ohm, 15V
Gate Charge: 145 nC
Current - Collector (Ic) (Max): 90 A
Voltage - Collector Emitter Breakdown (Max): 650 V
Current - Collector Pulsed (Icm): 144 A
Power - Max: 325 W
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BGS12WN6E6329XTSA1 BGS12WN6E6329XTSA1 Infineon Technologies 3_cip11424.pdf Description: IC RF SWITCH SPDT 9GHZ CELL WIFI
Features: DC Blocked
Packaging: Tape & Reel (TR)
Package / Case: 6-XFDFN
Impedance: 50Ohm
Mounting Type: Surface Mount
Circuit: SPDT
RF Type: Bluetooth, UWB, WiFi, WLAN
Operating Temperature: -40°C ~ 85°C (TA)
Voltage - Supply: 1.65V ~ 3.6V
Insertion Loss: 1.12dB
Frequency Range: 50MHz ~ 9GHz
Topology: Reflective
Test Frequency: 9GHz
Isolation: 22dB
Supplier Device Package: PG-TSNP-6-2
IIP3: 70dBm
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BGS12WN6E6329XTSA1 BGS12WN6E6329XTSA1 Infineon Technologies 3_cip11424.pdf Description: IC RF SWITCH SPDT 9GHZ CELL WIFI
Features: DC Blocked
Packaging: Cut Tape (CT)
Package / Case: 6-XFDFN
Impedance: 50Ohm
Mounting Type: Surface Mount
Circuit: SPDT
RF Type: Bluetooth, UWB, WiFi, WLAN
Operating Temperature: -40°C ~ 85°C (TA)
Voltage - Supply: 1.65V ~ 3.6V
Insertion Loss: 1.12dB
Frequency Range: 50MHz ~ 9GHz
Topology: Reflective
Test Frequency: 9GHz
Isolation: 22dB
Supplier Device Package: PG-TSNP-6-2
IIP3: 70dBm
на замовлення 5975 шт:
термін постачання 21-31 дні (днів)
14+23.87 грн
16+20.00 грн
25+18.82 грн
100+16.15 грн
250+15.24 грн
500+14.59 грн
1000+13.75 грн
5000+12.48 грн
Мінімальне замовлення: 14
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2ED3145MC12LXUMA1 2ED3145MC12LXUMA1 Infineon Technologies Infineon-2ED314xMC12L-DataSheet-v01_00-EN.pdf?fileId=8ac78c8c90530b3a019058e3ec3a2da2 Description: 2ED3145MC12LXUMA1
Packaging: Tape & Reel (TR)
Package / Case: 14-SOIC (0.295", 7.50mm Width)
Mounting Type: Surface Mount
Operating Temperature: -40°C ~ 125°C
Current - Peak Output: 6A, 6.5A
Technology: Capacitive Coupling
Current - Output High, Low: 6A, 6.5A
Voltage - Isolation: 5700Vrms
Approval Agency: UL
Supplier Device Package: PG-DSO-14-71
Rise / Fall Time (Typ): 20ns, 20ns (Max)
Common Mode Transient Immunity (Min): 200kV/µs
Propagation Delay tpLH / tpHL (Max): 40ns, 40ns
Number of Channels: 2
Voltage - Output Supply: 35V
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2ED3145MC12LXUMA1 2ED3145MC12LXUMA1 Infineon Technologies Infineon-2ED314xMC12L-DataSheet-v01_00-EN.pdf?fileId=8ac78c8c90530b3a019058e3ec3a2da2 Description: 2ED3145MC12LXUMA1
Packaging: Cut Tape (CT)
Package / Case: 14-SOIC (0.295", 7.50mm Width)
Mounting Type: Surface Mount
Operating Temperature: -40°C ~ 125°C
Current - Peak Output: 6A, 6.5A
Technology: Capacitive Coupling
Current - Output High, Low: 6A, 6.5A
Voltage - Isolation: 5700Vrms
Approval Agency: UL
Supplier Device Package: PG-DSO-14-71
Rise / Fall Time (Typ): 20ns, 20ns (Max)
Common Mode Transient Immunity (Min): 200kV/µs
Propagation Delay tpLH / tpHL (Max): 40ns, 40ns
Number of Channels: 2
Voltage - Output Supply: 35V
на замовлення 1480 шт:
термін постачання 21-31 дні (днів)
2+179.85 грн
10+128.36 грн
25+117.19 грн
100+98.46 грн
250+92.96 грн
500+89.66 грн
Мінімальне замовлення: 2
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CY7C024-25JXC CY7C024-25JXC Infineon Technologies CY7C024%2C41%2C025%2C0251%20RevC.pdf Description: IC SRAM 64KBIT PARALLEL 84PLCC
Packaging: Tube
Package / Case: 84-LCC (J-Lead)
Mounting Type: Surface Mount
Memory Size: 64Kbit
Memory Type: Volatile
Operating Temperature: 0°C ~ 70°C (TA)
Voltage - Supply: 4.5V ~ 5.5V
Technology: SRAM - Dual Port, Asynchronous
Memory Format: SRAM
Supplier Device Package: 84-PLCC (29.31x29.31)
Write Cycle Time - Word, Page: 25ns
Memory Interface: Parallel
Access Time: 25 ns
Memory Organization: 4K x 16
DigiKey Programmable: Not Verified
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CY7C0241-15AXC CY7C0241-15AXC Infineon Technologies CY7C024%2CA%2C0241%2C%20CY7C025%2C0251.pdf Description: IC SRAM 72KBIT PARALLEL 100TQFP
Packaging: Bulk
Package / Case: 100-LQFP
Mounting Type: Surface Mount
Memory Size: 72Kbit
Memory Type: Volatile
Operating Temperature: 0°C ~ 70°C (TA)
Voltage - Supply: 4.5V ~ 5.5V
Technology: SRAM - Dual Port, Asynchronous
Memory Format: SRAM
Supplier Device Package: 100-TQFP (14x14)
Write Cycle Time - Word, Page: 15ns
Memory Interface: Parallel
Access Time: 15 ns
Memory Organization: 4K x 18
DigiKey Programmable: Not Verified
на замовлення 848 шт:
термін постачання 21-31 дні (днів)
18+1263.70 грн
Мінімальне замовлення: 18
В кошику  од. на суму  грн.
CY7C0241E-15AXC CY7C0241E-15AXC Infineon Technologies CY7C024%2C241%2C25%2C251E_RevA.pdf Description: IC SRAM 72KBIT PARALLEL 100TQFP
Packaging: Tray
Package / Case: 100-LQFP
Mounting Type: Surface Mount
Memory Size: 72Kbit
Memory Type: Volatile
Operating Temperature: 0°C ~ 70°C (TA)
Voltage - Supply: 4.5V ~ 5.5V
Technology: SRAM - Dual Port, Asynchronous
Memory Format: SRAM
Supplier Device Package: 100-TQFP (14x14)
Write Cycle Time - Word, Page: 15ns
Memory Interface: Parallel
Access Time: 15 ns
Memory Organization: 4K x 18
DigiKey Programmable: Not Verified
на замовлення 81 шт:
термін постачання 21-31 дні (днів)
1+1180.19 грн
10+1051.80 грн
25+1037.59 грн
40+961.50 грн
В кошику  од. на суму  грн.
CY7C0241E-15AXI CY7C0241E-15AXI Infineon Technologies CY7C024%2C241%2C25%2C251E_RevA.pdf Description: IC SRAM 72KBIT PARALLEL 100TQFP
Packaging: Tray
Package / Case: 100-LQFP
Mounting Type: Surface Mount
Memory Size: 72Kbit
Memory Type: Volatile
Operating Temperature: -40°C ~ 85°C (TA)
Voltage - Supply: 4.5V ~ 5.5V
Technology: SRAM - Dual Port, Asynchronous
Memory Format: SRAM
Supplier Device Package: 100-TQFP (14x14)
Write Cycle Time - Word, Page: 15ns
Memory Interface: Parallel
Access Time: 15 ns
Memory Organization: 4K x 18
DigiKey Programmable: Not Verified
на замовлення 69 шт:
термін постачання 21-31 дні (днів)
1+1180.19 грн
10+1051.80 грн
25+1037.59 грн
40+961.50 грн
В кошику  од. на суму  грн.
CY7C024-55AXC CY7C024-55AXC Infineon Technologies CY7C024%2CA%2C0241%2C%20CY7C025%2C0251.pdf Description: IC SRAM 64KBIT PARALLEL 100TQFP
Packaging: Tray
Package / Case: 100-LQFP
Mounting Type: Surface Mount
Memory Size: 64Kbit
Memory Type: Volatile
Operating Temperature: 0°C ~ 70°C (TA)
Voltage - Supply: 4.5V ~ 5.5V
Technology: SRAM - Dual Port, Asynchronous
Memory Format: SRAM
Supplier Device Package: 100-TQFP (14x14)
Write Cycle Time - Word, Page: 55ns
Memory Interface: Parallel
Access Time: 55 ns
Memory Organization: 4K x 16
DigiKey Programmable: Not Verified
товару немає в наявності
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CY7C024-25AXC CY7C024-25AXC Infineon Technologies CY7C024%2CA%2C0241%2C%20CY7C025%2C0251.pdf Description: IC SRAM 64KBIT PARALLEL 100TQFP
Packaging: Tray
Package / Case: 100-LQFP
Mounting Type: Surface Mount
Memory Size: 64Kbit
Memory Type: Volatile
Operating Temperature: 0°C ~ 70°C (TA)
Voltage - Supply: 4.5V ~ 5.5V
Technology: SRAM - Dual Port, Asynchronous
Memory Format: SRAM
Supplier Device Package: 100-TQFP (14x14)
Write Cycle Time - Word, Page: 25ns
Memory Interface: Parallel
Access Time: 25 ns
Memory Organization: 4K x 16
DigiKey Programmable: Not Verified
товару немає в наявності
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CY7C024-25AXI CY7C024-25AXI Infineon Technologies CY7C024%2CA%2C0241%2C%20CY7C025%2C0251.pdf Description: IC SRAM 64KBIT PARALLEL 100TQFP
Packaging: Tray
Package / Case: 100-LQFP
Mounting Type: Surface Mount
Memory Size: 64Kbit
Memory Type: Volatile
Operating Temperature: -40°C ~ 85°C (TA)
Voltage - Supply: 4.5V ~ 5.5V
Technology: SRAM - Dual Port, Asynchronous
Memory Format: SRAM
Supplier Device Package: 100-TQFP (14x14)
Write Cycle Time - Word, Page: 25ns
Memory Interface: Parallel
Access Time: 25 ns
Memory Organization: 4K x 16
DigiKey Programmable: Not Verified
товару немає в наявності
В кошику  од. на суму  грн.
CY7C0241-25AXC CY7C0241-25AXC Infineon Technologies CY7C024%2CA%2C0241%2C%20CY7C025%2C0251.pdf Description: IC SRAM 72KBIT PARALLEL 100TQFP
Packaging: Tray
Package / Case: 100-LQFP
Mounting Type: Surface Mount
Memory Size: 72Kbit
Memory Type: Volatile
Operating Temperature: 0°C ~ 70°C (TA)
Voltage - Supply: 4.5V ~ 5.5V
Technology: SRAM - Dual Port, Asynchronous
Memory Format: SRAM
Supplier Device Package: 100-TQFP (14x14)
Write Cycle Time - Word, Page: 25ns
Memory Interface: Parallel
Access Time: 25 ns
Memory Organization: 4K x 18
DigiKey Programmable: Not Verified
товару немає в наявності
В кошику  од. на суму  грн.
CY7C024A-25JXC CY7C024A-25JXC Infineon Technologies CY7C024%2CA%2C0241%2C%20CY7C025%2C0251.pdf Description: IC SRAM 64KBIT PARALLEL 84PLCC
Packaging: Tube
Package / Case: 84-LCC (J-Lead)
Mounting Type: Surface Mount
Memory Size: 64Kbit
Memory Type: Volatile
Operating Temperature: 0°C ~ 70°C (TA)
Voltage - Supply: 3V ~ 3.6V
Technology: SRAM - Dual Port, Asynchronous
Memory Format: SRAM
Supplier Device Package: 84-PLCC (29.31x29.31)
Write Cycle Time - Word, Page: 25ns
Memory Interface: Parallel
Access Time: 25 ns
Memory Organization: 4K x 16
DigiKey Programmable: Not Verified
товару немає в наявності
В кошику  од. на суму  грн.
CY7C0241-15AXI CY7C0241-15AXI Infineon Technologies CY7C024%2CA%2C0241%2C%20CY7C025%2C0251.pdf Description: IC SRAM 72KBIT PARALLEL 100TQFP
Packaging: Tray
Package / Case: 100-LQFP
Mounting Type: Surface Mount
Memory Size: 72Kbit
Memory Type: Volatile
Operating Temperature: -40°C ~ 85°C (TA)
Voltage - Supply: 4.5V ~ 5.5V
Technology: SRAM - Dual Port, Asynchronous
Memory Format: SRAM
Supplier Device Package: 100-TQFP (14x14)
Write Cycle Time - Word, Page: 15ns
Memory Interface: Parallel
Access Time: 15 ns
Memory Organization: 4K x 18
DigiKey Programmable: Not Verified
товару немає в наявності
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CY7C024-55AC CY7C024-55AC Infineon Technologies CY7C024%2CA%2C0241%2C%20CY7C025%2C0251.pdf Description: IC SRAM 64KBIT PARALLEL 100TQFP
Packaging: Bag
Package / Case: 100-LQFP
Mounting Type: Surface Mount
Memory Size: 64Kbit
Memory Type: Volatile
Operating Temperature: 0°C ~ 70°C (TA)
Voltage - Supply: 4.5V ~ 5.5V
Technology: SRAM - Dual Port, Asynchronous
Memory Format: SRAM
Supplier Device Package: 100-TQFP (14x14)
Write Cycle Time - Word, Page: 55ns
Memory Interface: Parallel
Access Time: 55 ns
Memory Organization: 4K x 16
DigiKey Programmable: Not Verified
товару немає в наявності
В кошику  од. на суму  грн.
CY7C024-15AC CY7C024-15AC Infineon Technologies CY7C024%2CA%2C0241%2C%20CY7C025%2C0251.pdf Description: IC SRAM 64KBIT PARALLEL 100TQFP
Packaging: Bag
Package / Case: 100-LQFP
Mounting Type: Surface Mount
Memory Size: 64Kbit
Memory Type: Volatile
Operating Temperature: 0°C ~ 70°C (TA)
Voltage - Supply: 4.5V ~ 5.5V
Technology: SRAM - Dual Port, Asynchronous
Memory Format: SRAM
Supplier Device Package: 100-TQFP (14x14)
Write Cycle Time - Word, Page: 15ns
Memory Interface: Parallel
Access Time: 15 ns
Memory Organization: 4K x 16
DigiKey Programmable: Not Verified
товару немає в наявності
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CY7C024AV-25AC CY7C024AV-25AC Infineon Technologies CY7C0xxAV_RevH.pdf Description: IC SRAM 64KBIT PARALLEL 100TQFP
Packaging: Tray
Package / Case: 100-LQFP
Mounting Type: Surface Mount
Memory Size: 64Kbit
Memory Type: Volatile
Operating Temperature: 0°C ~ 70°C (TA)
Voltage - Supply: 3V ~ 3.6V
Technology: SRAM - Dual Port, Asynchronous
Memory Format: SRAM
Supplier Device Package: 100-TQFP (14x14)
Write Cycle Time - Word, Page: 25ns
Memory Interface: Parallel
Access Time: 25 ns
Memory Organization: 4K x 16
DigiKey Programmable: Not Verified
товару немає в наявності
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CY7C024AV-20AXCT CY7C024AV-20AXCT Infineon Technologies CY7C024AV_25AV_26AV_RevT_8-1-17.pdf Description: IC SRAM 64KBIT PARALLEL 100TQFP
Packaging: Tape & Reel (TR)
Package / Case: 100-LQFP
Mounting Type: Surface Mount
Memory Size: 64Kbit
Memory Type: Volatile
Operating Temperature: 0°C ~ 70°C (TA)
Voltage - Supply: 3V ~ 3.6V
Technology: SRAM - Dual Port, Asynchronous
Memory Format: SRAM
Supplier Device Package: 100-TQFP (14x14)
Write Cycle Time - Word, Page: 20ns
Memory Interface: Parallel
Access Time: 20 ns
Memory Organization: 4K x 16
DigiKey Programmable: Not Verified
товару немає в наявності
В кошику  од. на суму  грн.
SKW07N120FKSA1 SKW07N120FKSA1 Infineon Technologies SKW07N120.pdf Description: IGBT 1200V 16.5A 125W TO247
Packaging: Tube
Package / Case: TO-247-3
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Input Type: Standard
Reverse Recovery Time (trr): 60 ns
Vce(on) (Max) @ Vge, Ic: 3.6V @ 15V, 8A
Supplier Device Package: PG-TO247-3-1
IGBT Type: NPT
Td (on/off) @ 25°C: 27ns/440ns
Switching Energy: 1mJ
Test Condition: 800V, 8A, 47Ohm, 15V
Gate Charge: 70 nC
Current - Collector (Ic) (Max): 16.5 A
Voltage - Collector Emitter Breakdown (Max): 1200 V
Current - Collector Pulsed (Icm): 27 A
Power - Max: 125 W
на замовлення 1682 шт:
термін постачання 21-31 дні (днів)
79+280.41 грн
Мінімальне замовлення: 79
В кошику  од. на суму  грн.
EVALISSI30R11HTOBO1 EVALISSI30R11HTOBO1 Infineon Technologies Infineon-UG-2023-18_EVAL_iSSI30R11H-UserManual-v01_00-EN.pdf?fileId=8ac78c8c8d1b852e018d2c5b86fe5c61 Description: EVAL BOARD FOR ISSI30R11H
Packaging: Box
Function: Isolator
Type: Interface
Contents: Board(s)
Utilized IC / Part: iSSI30R11H
Supplied Contents: Board(s)
Primary Attributes: 2.5V ~ 3.5V Input Voltage
Embedded: No
на замовлення 7 шт:
термін постачання 21-31 дні (днів)
1+13647.34 грн
В кошику  од. на суму  грн.
CYAT81685-100AA71Z CYAT81685-100AA71Z Infineon Technologies Infineon-CYAT81682-100AA61Z-DataSheet-v01_00-EN.pdf?fileId=8ac78c8c82ce566401837edabc100b8b Description: PSOC BASED - TRUETOUCH
Packaging: Tray
Package / Case: 100-LQFP
Mounting Type: Surface Mount
Interface: I2C, SPI
Operating Temperature: -40°C ~ 85°C (TA)
Voltage - Supply: 1.71V ~ 1.95V, 3V ~ 5.5V
Supplier Device Package: 100-TQFP (14x14)
Touchscreen: 2 Wire Capacitive
Grade: Automotive
Qualification: AEC-Q100
товару немає в наявності
В кошику  од. на суму  грн.
IRFB4127PBFXKMA1 Infineon Technologies Description: TRENCH >=100V
Packaging: Tube
товару немає в наявності
В кошику  од. на суму  грн.
BTS700201ESPXUMA2 BTS700201ESPXUMA2 Infineon Technologies Infineon-BTS70020-1ESP-DataSheet-v01_20-EN.pdf?fileId=5546d462758f5bd101759850731539ad Description: PROFET PG-TSDSO-24
Packaging: Cut Tape (CT)
Package / Case: 24-TSSOP (0.154", 3.90mm Width) Exposed Pad
Output Type: N-Channel
Mounting Type: Surface Mount
Number of Outputs: 1
Switch Type: Relay, Solenoid Driver
Operating Temperature: -40°C ~ 150°C (TJ)
Output Configuration: High Side
Rds On (Typ): 2.3mOhm
Input Type: Non-Inverting
Voltage - Load: 4.1V ~ 28V
Voltage - Supply (Vcc/Vdd): 4.1V ~ 28V
Current - Output (Max): 23.2A
Ratio - Input:Output: 1:1
Supplier Device Package: PG-TSDSO-24-32
Fault Protection: Current Limiting (Fixed), Open Load Detect, Over Temperature, Over Voltage, Reverse Battery, UVLO
на замовлення 1877 шт:
термін постачання 21-31 дні (днів)
2+267.39 грн
10+193.58 грн
25+177.79 грн
100+150.50 грн
250+142.71 грн
500+138.02 грн
1000+131.95 грн
Мінімальне замовлення: 2
В кошику  од. на суму  грн.
FF5MR20KM1HPHPSA1 FF5MR20KM1HPHPSA1 Infineon Technologies Infineon-FF5MR20KM1HP-DataSheet-v00_10-EN.pdf?fileId=8ac78c8c8d2fe47b018dc623a8dc0d8c Description: MEDIUM POWER 62MM
Packaging: Tray
на замовлення 14 шт:
термін постачання 21-31 дні (днів)
1+29372.54 грн
В кошику  од. на суму  грн.
XC2365B40F80LAAKXUMA1 XC2365B40F80LAAKXUMA1 Infineon Technologies Infineon-SAK-XC2365B-40F80LR%20AB-DataSheet-v01_05-EN.pdf?fileId=5546d4626b2d8e69016b46cda5a330d0 Description: IC MCU 16/32B 320KB FLSH 100LQFP
Packaging: Tape & Reel (TR)
Package / Case: 100-LQFP Exposed Pad
Mounting Type: Surface Mount
Speed: 80MHz
Program Memory Size: 320KB (320K x 8)
RAM Size: 34K x 8
Operating Temperature: -40°C ~ 125°C (TA)
Oscillator Type: Internal
Program Memory Type: FLASH
Core Processor: C166SV2
Data Converters: A/D 16x10b
Core Size: 16/32-Bit
Voltage - Supply (Vcc/Vdd): 3V ~ 5.5V
Connectivity: CANbus, EBI/EMI, I2C, LINbus, SPI, SSC, UART/USART, USI
Peripherals: I2S, POR, PWM, WDT
Supplier Device Package: PG-LQFP-100-8
Number of I/O: 76
DigiKey Programmable: Not Verified
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PSB 6970 HL V1.3 PSB 6970 HL V1.3 Infineon Technologies PSB697x.pdf Description: IC TELECOM INTERFACE LQFP-100
Packaging: Tray
Package / Case: 100-LQFP Exposed Pad
Mounting Type: Surface Mount
Function: Ethernet Switch Controller
Interface: TX / FX
Voltage - Supply: 3.3V
Supplier Device Package: PG-LQFP-100
Number of Circuits: 1
товару немає в наявності
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SAF-XE164HN-24F80L AA SAF-XE164HN-24F80L AA Infineon Technologies Infineon-SAK-XE164FN-40F80LR%20AB-DataSheet-v01_40-EN.pdf?fileId=8ac78c8c8d2fe47b018dc5cc3b160cb9 Description: IC MCU 16BIT 192KB FLASH 100LQFP
Packaging: Tape & Reel (TR)
Package / Case: 100-LQFP Exposed Pad
Mounting Type: Surface Mount
Speed: 80MHz
Program Memory Size: 192KB (192K x 8)
RAM Size: 26K x 8
Operating Temperature: -40°C ~ 85°C (TA)
Oscillator Type: Internal
Program Memory Type: FLASH
Core Processor: C166SV2
Data Converters: A/D 16x10b
Core Size: 16-Bit
Voltage - Supply (Vcc/Vdd): 3V ~ 5.5V
Connectivity: EBI/EMI, I2C, LINbus, SPI, SSC, UART/USART, USI
Peripherals: I2S, POR, PWM, WDT
Supplier Device Package: PG-LQFP-100-8
Number of I/O: 75
DigiKey Programmable: Not Verified
товару немає в наявності
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IPP011N03LF2SAKSA1 IPP011N03LF2SAKSA1 Infineon Technologies Infineon-IPP011N03LF2S-DataSheet-v02_00-EN.pdf?fileId=8ac78c8c901008d101902fe1fa872535 Description: TRENCH <= 40V
Packaging: Tube
Package / Case: TO-220-3
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 46A (Ta), 210A (Tc)
Rds On (Max) @ Id, Vgs: 1.05mOhm @ 100A, 10V
Power Dissipation (Max): 3.8W (Ta), 375W (Tc)
Vgs(th) (Max) @ Id: 2.35V @ 250µA
Supplier Device Package: PG-TO220-3-U05
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 30 V
Gate Charge (Qg) (Max) @ Vgs: 336 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 15100 pF @ 15 V
на замовлення 790 шт:
термін постачання 21-31 дні (днів)
2+169.51 грн
10+135.64 грн
100+103.82 грн
500+78.73 грн
Мінімальне замовлення: 2
В кошику  од. на суму  грн.
IPTC026N12NM6ATMA1 IPTC026N12NM6ATMA1 Infineon Technologies Infineon-IPTC026N12NM6-DataSheet-v02_00-EN.pdf?fileId=8ac78c8c8d2fe47b018d35cc74f919ef Description: TRENCH >=100V
Packaging: Tape & Reel (TR)
Package / Case: 16-PowerSOP Module
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 26A (Ta), 222A (Tc)
Rds On (Max) @ Id, Vgs: 2.6mOhm @ 115A, 10V
Power Dissipation (Max): 3.8W (Ta), 278W (Tc)
Vgs(th) (Max) @ Id: 3.6V @ 169µA
Supplier Device Package: PG-HDSOP-16-2
Drive Voltage (Max Rds On, Min Rds On): 8V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 120 V
Gate Charge (Qg) (Max) @ Vgs: 88 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 6500 pF @ 60 V
товару немає в наявності
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IPTC026N12NM6ATMA1 IPTC026N12NM6ATMA1 Infineon Technologies Infineon-IPTC026N12NM6-DataSheet-v02_00-EN.pdf?fileId=8ac78c8c8d2fe47b018d35cc74f919ef Description: TRENCH >=100V
Packaging: Cut Tape (CT)
Package / Case: 16-PowerSOP Module
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 26A (Ta), 222A (Tc)
Rds On (Max) @ Id, Vgs: 2.6mOhm @ 115A, 10V
Power Dissipation (Max): 3.8W (Ta), 278W (Tc)
Vgs(th) (Max) @ Id: 3.6V @ 169µA
Supplier Device Package: PG-HDSOP-16-2
Drive Voltage (Max Rds On, Min Rds On): 8V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 120 V
Gate Charge (Qg) (Max) @ Vgs: 88 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 6500 pF @ 60 V
на замовлення 552 шт:
термін постачання 21-31 дні (днів)
1+478.28 грн
10+340.87 грн
100+246.61 грн
500+209.13 грн
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IPQC60R040S7AXTMA1 IPQC60R040S7AXTMA1 Infineon Technologies Infineon-IPQC60R040S7A-DataSheet-v02_00-EN.pdf?fileId=8ac78c8c850f4bee0185150cb48e6cfc Description: MOSFET
Packaging: Tape & Reel (TR)
Package / Case: 22-PowerBSOP Module
Mounting Type: Surface Mount
Operating Temperature: -40°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 14A (Tc)
Rds On (Max) @ Id, Vgs: 40mOhm @ 13A, 12V
Power Dissipation (Max): 272W (Tc)
Vgs(th) (Max) @ Id: 4.5V @ 790µA
Supplier Device Package: PG-HDSOP-22
Grade: Automotive
Drive Voltage (Max Rds On, Min Rds On): 12V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 600 V
Gate Charge (Qg) (Max) @ Vgs: 83 nC @ 12 V
Qualification: AEC-Q101
на замовлення 750 шт:
термін постачання 21-31 дні (днів)
750+363.07 грн
Мінімальне замовлення: 750
В кошику  од. на суму  грн.
IPQC60R040S7AXTMA1 IPQC60R040S7AXTMA1 Infineon Technologies Infineon-IPQC60R040S7A-DataSheet-v02_00-EN.pdf?fileId=8ac78c8c850f4bee0185150cb48e6cfc Description: MOSFET
Packaging: Cut Tape (CT)
Package / Case: 22-PowerBSOP Module
Mounting Type: Surface Mount
Operating Temperature: -40°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 14A (Tc)
Rds On (Max) @ Id, Vgs: 40mOhm @ 13A, 12V
Power Dissipation (Max): 272W (Tc)
Vgs(th) (Max) @ Id: 4.5V @ 790µA
Supplier Device Package: PG-HDSOP-22
Grade: Automotive
Drive Voltage (Max Rds On, Min Rds On): 12V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 600 V
Gate Charge (Qg) (Max) @ Vgs: 83 nC @ 12 V
Qualification: AEC-Q101
на замовлення 750 шт:
термін постачання 21-31 дні (днів)
1+576.17 грн
10+475.43 грн
100+396.25 грн
В кошику  од. на суму  грн.
IRGS4062DTRLPBF IRGS4062DTRLPBF Infineon Technologies IRGS%28SL%294062DPbF.pdf Description: IGBT TRENCH 600V 48A TO263-3
Packaging: Tape & Reel (TR)
Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Input Type: Standard
Reverse Recovery Time (trr): 89 ns
Vce(on) (Max) @ Vge, Ic: 1.95V @ 15V, 24A
Supplier Device Package: PG-TO263-3
IGBT Type: Trench
Td (on/off) @ 25°C: 41ns/104ns
Switching Energy: 115µJ (on), 600µJ (off)
Test Condition: 400V, 24A, 10Ohm, 15V
Gate Charge: 50 nC
Current - Collector (Ic) (Max): 48 A
Voltage - Collector Emitter Breakdown (Max): 600 V
Current - Collector Pulsed (Icm): 96 A
Power - Max: 250 W
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IRF7458PBF IRF7458PBF Infineon Technologies irf7458pbf.pdf?fileId=5546d462533600a4015355fecb231bfe Description: MOSFET N-CH 30V 14A 8SO
Packaging: Tube
Package / Case: 8-SOIC (0.154", 3.90mm Width)
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 14A (Ta)
Rds On (Max) @ Id, Vgs: 8mOhm @ 14A, 16V
Power Dissipation (Max): 2.5W (Ta)
Vgs(th) (Max) @ Id: 4V @ 250µA
Supplier Device Package: 8-SO
Drive Voltage (Max Rds On, Min Rds On): 10V, 16V
Vgs (Max): ±30V
Drain to Source Voltage (Vdss): 30 V
Gate Charge (Qg) (Max) @ Vgs: 59 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 2410 pF @ 15 V
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S25FL256SDPMFV000 S25FL256SDPMFV000 Infineon Technologies Infineon-S25FL128S_S25FL256S_128_Mb_(16_MB)_256_Mb_(32_MB)_3.0V_SPI_Flash_Memory-DataSheet-v18_00-EN.pdf?fileId=8ac78c8c7d0d8da4017d0ecfb6a64a17 Description: IC FLASH 256MBIT SPI/QUAD 16SOIC
Packaging: Tray
Package / Case: 16-SOIC (0.295", 7.50mm Width)
Mounting Type: Surface Mount
Memory Size: 256Mbit
Memory Type: Non-Volatile
Operating Temperature: -40°C ~ 105°C (TA)
Voltage - Supply: 2.7V ~ 3.6V
Technology: FLASH - NOR
Clock Frequency: 66 MHz
Memory Format: FLASH
Supplier Device Package: 16-SOIC
Memory Interface: SPI - Quad I/O
Memory Organization: 32M x 8
DigiKey Programmable: Not Verified
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CY8C4247AZS-M485T CY8C4247AZS-M485T Infineon Technologies Description: IC MCU 32BIT 128KB FLASH 64LQFP
Packaging: Tape & Reel (TR)
Package / Case: 64-LQFP
Mounting Type: Surface Mount
Speed: 48MHz
Program Memory Size: 128KB (128K x 8)
RAM Size: 16K x 8
Operating Temperature: -40°C ~ 105°C (TA)
Oscillator Type: External, Internal
Program Memory Type: FLASH
Core Processor: ARM® Cortex®-M0
Data Converters: A/D 24x12b SAR; D/A 4x7/8b
Core Size: 32-Bit
Voltage - Supply (Vcc/Vdd): 1.71V ~ 5.5V
Connectivity: CANbus, I2C, IrDA, LINbus, Microwire, SmartCard, SPI, SSP, UART/USART
Peripherals: Brown-out Detect/Reset, Cap Sense, LCD, LVD, POR, PWM, SmartSense, WDT
Supplier Device Package: 64-TQFP (10x10)
Grade: Automotive
Number of I/O: 51
Qualification: AEC-Q100
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TLE82092EXUMA2 TLE82092EXUMA2 Infineon Technologies Infineon-TLE8209-2SA-DS-v01_02-EN.pdf?fileId=5546d4624a0bf290014a0f5818836a1e Description: IC MOTOR DRIVER 4.4V-5.25V 20DSO
Packaging: Tape & Reel (TR)
Package / Case: 20-SOIC (0.433", 11.00mm Width) Exposed Pad
Mounting Type: Surface Mount
Function: Driver - Fully Integrated, Control and Power Stage
Current - Output: 8.6A
Interface: SPI
Operating Temperature: -40°C ~ 150°C (TJ)
Output Configuration: Half Bridge (2)
Voltage - Supply: 4.4V ~ 5.25V
Technology: Power MOSFET
Voltage - Load: 4.5V ~ 28V
Supplier Device Package: PG-DSO-20-65
Motor Type - AC, DC: Brushed DC
Grade: Automotive
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BTT60201ERAXUMA1 BTT60201ERAXUMA1 Infineon Technologies Infineon-BTT6020-1ERA-DS-v01_00-EN.pdf?fileId=5546d46269e1c019016a21e800960d76 Description: IC PWR SWITCH N-CHAN 1:1 TDSO-14
Packaging: Cut Tape (CT)
Package / Case: 14-SOIC (0.154", 3.90mm Width) Exposed Pad
Output Type: N-Channel
Mounting Type: Surface Mount
Number of Outputs: 1
Interface: On/Off
Switch Type: General Purpose
Operating Temperature: -40°C ~ 150°C (TJ)
Output Configuration: High Side
Rds On (Typ): 20mOhm
Input Type: Non-Inverting
Voltage - Load: 5V ~ 36V
Voltage - Supply (Vcc/Vdd): Not Required
Current - Output (Max): 7A
Ratio - Input:Output: 1:1
Supplier Device Package: PG-TDSO-14-11
Fault Protection: Current Limiting (Fixed), Open Load Detect, Over Temperature, Over Voltage
Grade: Automotive
Qualification: AEC-Q100
на замовлення 731 шт:
термін постачання 21-31 дні (днів)
2+230.78 грн
10+166.52 грн
25+152.59 грн
100+128.85 грн
250+122.01 грн
500+117.89 грн
Мінімальне замовлення: 2
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KP276D1201XTMA1 KP276D1201XTMA1 Infineon Technologies Infineon-KP276D1201-DataSheet-v01_00-EN.pdf?fileId=8ac78c8c7d0d8da4017d0fd7eeeb2fe1 Description: SENSOR 58.02PSIA 12BIT DSOF8
Features: Temperature Compensated
Packaging: Tape & Reel (TR)
Package / Case: 8-SMD Module
Output Type: SENT
Mounting Type: Surface Mount
Output: 12 b
Operating Pressure: 1.45 ~ 58.02PSI (10kPa ~ 400kPa)
Pressure Type: Absolute
Accuracy: ±0.77%
Operating Temperature: -40°C ~ 150°C
Termination Style: SMD (SMT) Tab
Voltage - Supply: 4.5V ~ 5.5V
Supplier Device Package: PG-DSOF-8-162
Port Style: No Port
Grade: Automotive
Qualification: AEC-Q100
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CYT4DNJBMCQ1BZSGS Infineon Technologies Infineon-TRAVEO_T2G_CYT4DN-DataSheet-v01_00-EN.pdf?fileId=8ac78c8c869190210186f0cceff43fd0 Description: TRAVEO-2 CLUST.2.5DGRAPH
Packaging: Tray
Package / Case: 327-LFBGA
Mounting Type: Surface Mount
Speed: 100MHz, 320MHz
Program Memory Size: 6.19MB (6.19M x 8)
RAM Size: 640K x 8
Operating Temperature: -40°C ~ 105°C (TA)
Oscillator Type: External, Internal
Program Memory Type: FLASH
EEPROM Size: 128K x 8
Core Processor: ARM® Cortex®-M0+, ARM® Cortex®-M7F
Data Converters: A/D 48x12b SAR
Core Size: 32-Bit Tri-Core
Voltage - Supply (Vcc/Vdd): 2.7V ~ 5.5V
Connectivity: CANbus, Ethernet, I2C, LINbus, SPI, UART/USART
Peripherals: DMA, I2S, LVD, Temp Sensor, WDT
Supplier Device Package: 327-FBGA (17x17)
Number of I/O: 168
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TLE49614MXTMA1 Infineon-TLE4961_4M-DS-v01_00-en.pdf?fileId=db3a304340155f3d0140394b4fd67ddc
TLE49614MXTMA1
Виробник: Infineon Technologies
Description: MAG SWITCH IC HALL EFF SOT23-3
Packaging: Tape & Reel (TR)
Grade: Automotive
Qualification: AEC-Q100
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CY62128EV30LL-45SXIT Infineon-CY62128EV30_MoBL_1_Mbit_(128K_X_8)_Static_RAM-DataSheet-v17_00-EN.pdf?fileId=8ac78c8c7d0d8da4017d0ebe867f322f&utm_source=cypress&utm_medium=referral&utm_campaign=202110_globe_en_all_integration-files
CY62128EV30LL-45SXIT
Виробник: Infineon Technologies
Description: IC SRAM 1MBIT PARALLEL 32SOIC
Packaging: Tape & Reel (TR)
Package / Case: 32-SOIC (0.445", 11.30mm Width)
Mounting Type: Surface Mount
Memory Size: 1Mbit
Memory Type: Volatile
Operating Temperature: -40°C ~ 85°C (TA)
Voltage - Supply: 2.2V ~ 3.6V
Technology: SRAM - Asynchronous
Memory Format: SRAM
Supplier Device Package: 32-SOIC
Write Cycle Time - Word, Page: 45ns
Memory Interface: Parallel
Access Time: 45 ns
Memory Organization: 128K x 8
DigiKey Programmable: Not Verified
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CY62128EV30LL-45SXIT Infineon-CY62128EV30_MoBL_1_Mbit_(128K_X_8)_Static_RAM-DataSheet-v17_00-EN.pdf?fileId=8ac78c8c7d0d8da4017d0ebe867f322f&utm_source=cypress&utm_medium=referral&utm_campaign=202110_globe_en_all_integration-files
CY62128EV30LL-45SXIT
Виробник: Infineon Technologies
Description: IC SRAM 1MBIT PARALLEL 32SOIC
Packaging: Cut Tape (CT)
Package / Case: 32-SOIC (0.445", 11.30mm Width)
Mounting Type: Surface Mount
Memory Size: 1Mbit
Memory Type: Volatile
Operating Temperature: -40°C ~ 85°C (TA)
Voltage - Supply: 2.2V ~ 3.6V
Technology: SRAM - Asynchronous
Memory Format: SRAM
Supplier Device Package: 32-SOIC
Write Cycle Time - Word, Page: 45ns
Memory Interface: Parallel
Access Time: 45 ns
Memory Organization: 128K x 8
DigiKey Programmable: Not Verified
на замовлення 559 шт:
термін постачання 21-31 дні (днів)
Кількість Ціна
2+296.04 грн
10+252.66 грн
25+240.91 грн
50+218.10 грн
100+210.39 грн
250+200.61 грн
500+190.33 грн
Мінімальне замовлення: 2
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CY62128DV30LL-70ZXI CY62128DV30%20Rev2006.pdf
CY62128DV30LL-70ZXI
Виробник: Infineon Technologies
Description: IC SRAM 1MBIT PARALLEL 32TSOP I
Packaging: Tube
Package / Case: 32-TFSOP (0.724", 18.40mm Width)
Mounting Type: Surface Mount
Memory Size: 1Mbit
Memory Type: Volatile
Operating Temperature: -40°C ~ 85°C (TA)
Voltage - Supply: 2.2V ~ 3.6V
Technology: SRAM - Asynchronous
Memory Format: SRAM
Supplier Device Package: 32-TSOP I
Write Cycle Time - Word, Page: 70ns
Memory Interface: Parallel
Access Time: 70 ns
Memory Organization: 128K x 8
DigiKey Programmable: Not Verified
на замовлення 891 шт:
термін постачання 21-31 дні (днів)
Кількість Ціна
128+172.06 грн
Мінімальне замовлення: 128
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CY62128DV30LL-70ZXI CY62128DV30%20Rev2006.pdf
CY62128DV30LL-70ZXI
Виробник: Infineon Technologies
Description: IC SRAM 1MBIT PARALLEL 32TSOP I
Packaging: Tube
Package / Case: 32-TFSOP (0.724", 18.40mm Width)
Mounting Type: Surface Mount
Memory Size: 1Mbit
Memory Type: Volatile
Operating Temperature: -40°C ~ 85°C (TA)
Voltage - Supply: 2.2V ~ 3.6V
Technology: SRAM - Asynchronous
Memory Format: SRAM
Supplier Device Package: 32-TSOP I
Write Cycle Time - Word, Page: 70ns
Memory Interface: Parallel
Access Time: 70 ns
Memory Organization: 128K x 8
DigiKey Programmable: Not Verified
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IM66D120AXTMA1 Infineon-IM66D120A-DataSheet-v01_00-EN.pdf?fileId=8ac78c8c8c3de074018c63d5dd683a35
IM66D120AXTMA1
Виробник: Infineon Technologies
Description: MEMS GROWTH
Packaging: Tape & Reel (TR)
Output Type: Digital, PDM
Size / Dimension: 0.138" L x 0.104" W (3.50mm x 2.65mm)
Sensitivity: -26dB ±1dB @ 94dB SPL
Shape: Rectangular
Type: MEMS (Silicon)
S/N Ratio: 66dB
Termination: Solder Pads
Direction: Omnidirectional
Port Location: Bottom
Height (Max): 0.039" (0.99mm)
Voltage - Rated: 1.8 V
Current - Supply: 1.4 mA
Voltage Range: 1.62 V ~ 3.6 V
Frequency Range: 10 Hz ~ 10 kHz
на замовлення 5000 шт:
термін постачання 21-31 дні (днів)
Кількість Ціна
5000+76.76 грн
Мінімальне замовлення: 5000
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IM66D120AXTMA1 Infineon-IM66D120A-DataSheet-v01_00-EN.pdf?fileId=8ac78c8c8c3de074018c63d5dd683a35
IM66D120AXTMA1
Виробник: Infineon Technologies
Description: MEMS GROWTH
Packaging: Cut Tape (CT)
Output Type: Digital, PDM
Size / Dimension: 0.138" L x 0.104" W (3.50mm x 2.65mm)
Sensitivity: -26dB ±1dB @ 94dB SPL
Shape: Rectangular
Type: MEMS (Silicon)
S/N Ratio: 66dB
Termination: Solder Pads
Direction: Omnidirectional
Port Location: Bottom
Height (Max): 0.039" (0.99mm)
Voltage - Rated: 1.8 V
Current - Supply: 1.4 mA
Voltage Range: 1.62 V ~ 3.6 V
Frequency Range: 10 Hz ~ 10 kHz
на замовлення 5064 шт:
термін постачання 21-31 дні (днів)
Кількість Ціна
3+152.80 грн
10+109.05 грн
25+99.41 грн
100+83.33 грн
250+78.58 грн
500+75.71 грн
1000+72.15 грн
2500+69.71 грн
Мінімальне замовлення: 3
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S6E2C39J0AGB1000A download
S6E2C39J0AGB1000A
Виробник: Infineon Technologies
Description: IC MCU 32BIT 1.5MB FLASH 192FBGA
Packaging: Tray
Package / Case: 192-LFBGA
Mounting Type: Surface Mount
Speed: 200MHz
Program Memory Size: 1.5MB (1.5M x 8)
RAM Size: 192K x 8
Operating Temperature: -40°C ~ 125°C (TA)
Oscillator Type: Internal
Program Memory Type: FLASH
Core Processor: ARM® Cortex®-M4F
Data Converters: A/D 32x12b; D/A 2x12b
Core Size: 32-Bit Single-Core
Voltage - Supply (Vcc/Vdd): 2.7V ~ 5.5V
Connectivity: CSIO, EBI/EMI, I2C, LINbus, SD, SPI, UART/USART, USB
Peripherals: DMA, I2S, LVD, POR, PWM, WDT
Supplier Device Package: 192-FBGA (12x12)
Number of I/O: 152
DigiKey Programmable: Not Verified
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S6E2C38H0AGV2000A download
S6E2C38H0AGV2000A
Виробник: Infineon Technologies
Description: IC MCU 32BIT 1MB FLASH 144LQFP
Packaging: Tray
Package / Case: 144-LQFP
Mounting Type: Surface Mount
Speed: 200MHz
Program Memory Size: 1MB (1M x 8)
RAM Size: 128K x 8
Operating Temperature: -40°C ~ 125°C (TA)
Oscillator Type: Internal
Program Memory Type: FLASH
Core Processor: ARM® Cortex®-M4F
Data Converters: A/D 24x12b; D/A 2x12b
Core Size: 32-Bit Single-Core
Voltage - Supply (Vcc/Vdd): 2.7V ~ 5.5V
Connectivity: CSIO, EBI/EMI, I2C, LINbus, SD, UART/USART, USB
Peripherals: DMA, LVD, POR, PWM, WDT
Supplier Device Package: 144-LQFP (20x20)
Number of I/O: 120
DigiKey Programmable: Not Verified
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IPSA70R1K2P7SAKMA1 Infineon-IPSA70R1K2P7S-DS-v02_00-EN.pdf?fileId=5546d4625f2e26bc015f4d40e16a1340
IPSA70R1K2P7SAKMA1
Виробник: Infineon Technologies
Description: MOSFET N-CH 700V 4.5A TO251-3
Packaging: Tube
Package / Case: TO-251-3 Short Leads, IPak, TO-251AA
Mounting Type: Through Hole
Operating Temperature: -40°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 4.5A (Tc)
Rds On (Max) @ Id, Vgs: 1.2Ohm @ 900mA, 10V
Power Dissipation (Max): 25W (Tc)
Vgs(th) (Max) @ Id: 3.5V @ 40µA
Supplier Device Package: PG-TO251-3
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±16V
Drain to Source Voltage (Vdss): 700 V
Gate Charge (Qg) (Max) @ Vgs: 4.8 nC @ 400 V
Input Capacitance (Ciss) (Max) @ Vds: 174 pF @ 400 V
на замовлення 2 шт:
термін постачання 21-31 дні (днів)
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62-0095PBF fundamentals-of-power-semiconductors
Виробник: Infineon Technologies
Description: MOSFET N-CH 20V 10A/12A 8SOIC
Packaging: Tube
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 10A (Ta), 12A (Tc)
Rds On (Max) @ Id, Vgs: 13.4mOhm @ 10A, 10V
Power Dissipation (Max): 2W
Vgs(th) (Max) @ Id: 2.55V @ 250µA
Drive Voltage (Max Rds On, Min Rds On): 10V
Drain to Source Voltage (Vdss): 20 V
Gate Charge (Qg) (Max) @ Vgs: 11 nC @ 4.5 V
Input Capacitance (Ciss) (Max) @ Vds: 900 pF @ 10 V
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D2200N24TVFXPSA1 D2200N.pdf
D2200N24TVFXPSA1
Виробник: Infineon Technologies
Description: DIODE GEN PURP 2.4KV 2200A
Packaging: Tray
Package / Case: DO-200AC, K-PUK
Mounting Type: Clamp On
Speed: Standard Recovery >500ns, > 200mA (Io)
Technology: Standard
Current - Average Rectified (Io): 2200A
Operating Temperature - Junction: -40°C ~ 160°C
Voltage - DC Reverse (Vr) (Max): 2400 V
Voltage - Forward (Vf) (Max) @ If: 1.2 V @ 2000 A
Current - Reverse Leakage @ Vr: 150 mA @ 2400 V
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BSM15GD120DN2BOSA1
Виробник: Infineon Technologies
Description: IGBT MOD 1200V 25A 145W
Packaging: Tray
Package / Case: Module
Mounting Type: Chassis Mount
Input: Standard
Configuration: Three Phase Inverter
Operating Temperature: 150°C (TJ)
Vce(on) (Max) @ Vge, Ic: 3V @ 15V, 15A
NTC Thermistor: No
Supplier Device Package: Module
Current - Collector (Ic) (Max): 25 A
Voltage - Collector Emitter Breakdown (Max): 1200 V
Power - Max: 145 W
Current - Collector Cutoff (Max): 500 µA
Input Capacitance (Cies) @ Vce: 100 pF @ 25 V
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IGB15N120S7ATMA1 Infineon-IGB15N120S7-DataSheet-v01_00-EN.pdf?fileId=8ac78c8c914a3ac801917eb7408c326a
IGB15N120S7ATMA1
Виробник: Infineon Technologies
Description: IGBT TRENCH FS 1200V 34A TO263-3
Packaging: Cut Tape (CT)
Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
Mounting Type: Surface Mount
Operating Temperature: -40°C ~ 150°C (TJ)
Input Type: Standard
Vce(on) (Max) @ Vge, Ic: 2V @ 15V, 15A
Supplier Device Package: PG-TO263-3-2
IGBT Type: Trench Field Stop
Td (on/off) @ 25°C: 16ns/156ns
Switching Energy: 900µJ (on), 680µJ (off)
Test Condition: 600V, 15A, 10Ohm, 15V
Gate Charge: 97 nC
Current - Collector (Ic) (Max): 34 A
Voltage - Collector Emitter Breakdown (Max): 1200 V
Current - Collector Pulsed (Icm): 45 A
Power - Max: 141 W
на замовлення 740 шт:
термін постачання 21-31 дні (днів)
Кількість Ціна
1+387.56 грн
10+248.45 грн
100+177.64 грн
500+160.00 грн
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BGSX24M2U16E6327XTSA1 Infineon-BGSX24M2U16-DataSheet-v01_00-EN.pdf?fileId=8ac78c8c8d2fe47b018dd17eaaed054c
BGSX24M2U16E6327XTSA1
Виробник: Infineon Technologies
Description: ANTENNA DEVICES
Features: DC Blocked
Packaging: Tape & Reel (TR)
Package / Case: 16-UFLGA Exposed Pad
Impedance: 50Ohm
Mounting Type: Surface Mount
Circuit: DP4T
RF Type: 5G, LTE
Operating Temperature: -40°C ~ 85°C
Voltage - Supply: 1.1V ~ 1.3V, 1.65V ~ 1.95V
Insertion Loss: 1.14dB
Frequency Range: 400MHz ~ 7.125GHz
Topology: Absorptive
Test Frequency: 7.125GHz
Isolation: 35dB
Supplier Device Package: PG-ULGA-16-6
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AUIRFSL8408 AUIRFS%28L%298408.pdf
AUIRFSL8408
Виробник: Infineon Technologies
Description: MOSFET N-CH 40V 195A TO262
Packaging: Tube
Package / Case: TO-262-3 Long Leads, I2PAK, TO-262AA
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 195A (Tc)
Rds On (Max) @ Id, Vgs: 1.6mOhm @ 100A, 10V
Power Dissipation (Max): 294W (Tc)
Vgs(th) (Max) @ Id: 3.9V @ 250µA
Supplier Device Package: TO-262
Drain to Source Voltage (Vdss): 40 V
Gate Charge (Qg) (Max) @ Vgs: 324 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 10820 pF @ 25 V
на замовлення 450 шт:
термін постачання 21-31 дні (днів)
Кількість Ціна
176+125.53 грн
Мінімальне замовлення: 176
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ROTATEKNOB3D2GOKITTOBO1 ROTATEKNOB3D2GOKITTOBO1_Web.pdf
ROTATEKNOB3D2GOKITTOBO1
Виробник: Infineon Technologies
Description: ROTATE & PUSH BUTTON CONTROL ELE
Packaging: Bulk
For Use With/Related Products: 3D Magnetic Sensor
Accessory Type: Knob
на замовлення 6 шт:
термін постачання 21-31 дні (днів)
Кількість Ціна
1+2042.05 грн
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IRGP4760DPBF IRGP4760D%28-E%29PbF.pdf
IRGP4760DPBF
Виробник: Infineon Technologies
Description: IGBT 650V TO-247
Packaging: Tube
Package / Case: TO-247-3
Mounting Type: Through Hole
Operating Temperature: -40°C ~ 175°C (TJ)
Input Type: Standard
Reverse Recovery Time (trr): 170 ns
Vce(on) (Max) @ Vge, Ic: 2V @ 15V, 48A
Supplier Device Package: TO-247AC
Td (on/off) @ 25°C: 70ns/140ns
Switching Energy: 1.7mJ (on), 1mJ (off)
Test Condition: 400V, 48A, 10Ohm, 15V
Gate Charge: 145 nC
Current - Collector (Ic) (Max): 90 A
Voltage - Collector Emitter Breakdown (Max): 650 V
Current - Collector Pulsed (Icm): 144 A
Power - Max: 325 W
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IRGP4760-EPBF IRGP4760%28-E%29PbF.pdf
IRGP4760-EPBF
Виробник: Infineon Technologies
Description: IGBT 650V TO-247
Packaging: Tube
Package / Case: TO-247-3
Mounting Type: Through Hole
Operating Temperature: -40°C ~ 175°C (TJ)
Input Type: Standard
Vce(on) (Max) @ Vge, Ic: 2V @ 15V, 48A
Supplier Device Package: TO-247AD
Td (on/off) @ 25°C: 70ns/140ns
Switching Energy: 1.7mJ (on), 1mJ (off)
Test Condition: 400V, 48A, 10Ohm, 15V
Gate Charge: 145 nC
Current - Collector (Ic) (Max): 90 A
Voltage - Collector Emitter Breakdown (Max): 650 V
Current - Collector Pulsed (Icm): 144 A
Power - Max: 325 W
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IRGP4760PBF IRGP4760%28-E%29PbF.pdf
IRGP4760PBF
Виробник: Infineon Technologies
Description: IGBT 650V TO-247
Packaging: Tube
Package / Case: TO-247-3
Mounting Type: Through Hole
Operating Temperature: -40°C ~ 175°C (TJ)
Input Type: Standard
Vce(on) (Max) @ Vge, Ic: 2V @ 15V, 48A
Supplier Device Package: TO-247AC
Td (on/off) @ 25°C: 70ns/140ns
Switching Energy: 1.7mJ (on), 1mJ (off)
Test Condition: 400V, 48A, 10Ohm, 15V
Gate Charge: 145 nC
Current - Collector (Ic) (Max): 90 A
Voltage - Collector Emitter Breakdown (Max): 650 V
Current - Collector Pulsed (Icm): 144 A
Power - Max: 325 W
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BGS12WN6E6329XTSA1 3_cip11424.pdf
BGS12WN6E6329XTSA1
Виробник: Infineon Technologies
Description: IC RF SWITCH SPDT 9GHZ CELL WIFI
Features: DC Blocked
Packaging: Tape & Reel (TR)
Package / Case: 6-XFDFN
Impedance: 50Ohm
Mounting Type: Surface Mount
Circuit: SPDT
RF Type: Bluetooth, UWB, WiFi, WLAN
Operating Temperature: -40°C ~ 85°C (TA)
Voltage - Supply: 1.65V ~ 3.6V
Insertion Loss: 1.12dB
Frequency Range: 50MHz ~ 9GHz
Topology: Reflective
Test Frequency: 9GHz
Isolation: 22dB
Supplier Device Package: PG-TSNP-6-2
IIP3: 70dBm
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BGS12WN6E6329XTSA1 3_cip11424.pdf
BGS12WN6E6329XTSA1
Виробник: Infineon Technologies
Description: IC RF SWITCH SPDT 9GHZ CELL WIFI
Features: DC Blocked
Packaging: Cut Tape (CT)
Package / Case: 6-XFDFN
Impedance: 50Ohm
Mounting Type: Surface Mount
Circuit: SPDT
RF Type: Bluetooth, UWB, WiFi, WLAN
Operating Temperature: -40°C ~ 85°C (TA)
Voltage - Supply: 1.65V ~ 3.6V
Insertion Loss: 1.12dB
Frequency Range: 50MHz ~ 9GHz
Topology: Reflective
Test Frequency: 9GHz
Isolation: 22dB
Supplier Device Package: PG-TSNP-6-2
IIP3: 70dBm
на замовлення 5975 шт:
термін постачання 21-31 дні (днів)
Кількість Ціна
14+23.87 грн
16+20.00 грн
25+18.82 грн
100+16.15 грн
250+15.24 грн
500+14.59 грн
1000+13.75 грн
5000+12.48 грн
Мінімальне замовлення: 14
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2ED3145MC12LXUMA1 Infineon-2ED314xMC12L-DataSheet-v01_00-EN.pdf?fileId=8ac78c8c90530b3a019058e3ec3a2da2
2ED3145MC12LXUMA1
Виробник: Infineon Technologies
Description: 2ED3145MC12LXUMA1
Packaging: Tape & Reel (TR)
Package / Case: 14-SOIC (0.295", 7.50mm Width)
Mounting Type: Surface Mount
Operating Temperature: -40°C ~ 125°C
Current - Peak Output: 6A, 6.5A
Technology: Capacitive Coupling
Current - Output High, Low: 6A, 6.5A
Voltage - Isolation: 5700Vrms
Approval Agency: UL
Supplier Device Package: PG-DSO-14-71
Rise / Fall Time (Typ): 20ns, 20ns (Max)
Common Mode Transient Immunity (Min): 200kV/µs
Propagation Delay tpLH / tpHL (Max): 40ns, 40ns
Number of Channels: 2
Voltage - Output Supply: 35V
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2ED3145MC12LXUMA1 Infineon-2ED314xMC12L-DataSheet-v01_00-EN.pdf?fileId=8ac78c8c90530b3a019058e3ec3a2da2
2ED3145MC12LXUMA1
Виробник: Infineon Technologies
Description: 2ED3145MC12LXUMA1
Packaging: Cut Tape (CT)
Package / Case: 14-SOIC (0.295", 7.50mm Width)
Mounting Type: Surface Mount
Operating Temperature: -40°C ~ 125°C
Current - Peak Output: 6A, 6.5A
Technology: Capacitive Coupling
Current - Output High, Low: 6A, 6.5A
Voltage - Isolation: 5700Vrms
Approval Agency: UL
Supplier Device Package: PG-DSO-14-71
Rise / Fall Time (Typ): 20ns, 20ns (Max)
Common Mode Transient Immunity (Min): 200kV/µs
Propagation Delay tpLH / tpHL (Max): 40ns, 40ns
Number of Channels: 2
Voltage - Output Supply: 35V
на замовлення 1480 шт:
термін постачання 21-31 дні (днів)
Кількість Ціна
2+179.85 грн
10+128.36 грн
25+117.19 грн
100+98.46 грн
250+92.96 грн
500+89.66 грн
Мінімальне замовлення: 2
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CY7C024-25JXC CY7C024%2C41%2C025%2C0251%20RevC.pdf
CY7C024-25JXC
Виробник: Infineon Technologies
Description: IC SRAM 64KBIT PARALLEL 84PLCC
Packaging: Tube
Package / Case: 84-LCC (J-Lead)
Mounting Type: Surface Mount
Memory Size: 64Kbit
Memory Type: Volatile
Operating Temperature: 0°C ~ 70°C (TA)
Voltage - Supply: 4.5V ~ 5.5V
Technology: SRAM - Dual Port, Asynchronous
Memory Format: SRAM
Supplier Device Package: 84-PLCC (29.31x29.31)
Write Cycle Time - Word, Page: 25ns
Memory Interface: Parallel
Access Time: 25 ns
Memory Organization: 4K x 16
DigiKey Programmable: Not Verified
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CY7C0241-15AXC CY7C024%2CA%2C0241%2C%20CY7C025%2C0251.pdf
CY7C0241-15AXC
Виробник: Infineon Technologies
Description: IC SRAM 72KBIT PARALLEL 100TQFP
Packaging: Bulk
Package / Case: 100-LQFP
Mounting Type: Surface Mount
Memory Size: 72Kbit
Memory Type: Volatile
Operating Temperature: 0°C ~ 70°C (TA)
Voltage - Supply: 4.5V ~ 5.5V
Technology: SRAM - Dual Port, Asynchronous
Memory Format: SRAM
Supplier Device Package: 100-TQFP (14x14)
Write Cycle Time - Word, Page: 15ns
Memory Interface: Parallel
Access Time: 15 ns
Memory Organization: 4K x 18
DigiKey Programmable: Not Verified
на замовлення 848 шт:
термін постачання 21-31 дні (днів)
Кількість Ціна
18+1263.70 грн
Мінімальне замовлення: 18
В кошику  од. на суму  грн.
CY7C0241E-15AXC CY7C024%2C241%2C25%2C251E_RevA.pdf
CY7C0241E-15AXC
Виробник: Infineon Technologies
Description: IC SRAM 72KBIT PARALLEL 100TQFP
Packaging: Tray
Package / Case: 100-LQFP
Mounting Type: Surface Mount
Memory Size: 72Kbit
Memory Type: Volatile
Operating Temperature: 0°C ~ 70°C (TA)
Voltage - Supply: 4.5V ~ 5.5V
Technology: SRAM - Dual Port, Asynchronous
Memory Format: SRAM
Supplier Device Package: 100-TQFP (14x14)
Write Cycle Time - Word, Page: 15ns
Memory Interface: Parallel
Access Time: 15 ns
Memory Organization: 4K x 18
DigiKey Programmable: Not Verified
на замовлення 81 шт:
термін постачання 21-31 дні (днів)
Кількість Ціна
1+1180.19 грн
10+1051.80 грн
25+1037.59 грн
40+961.50 грн
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CY7C0241E-15AXI CY7C024%2C241%2C25%2C251E_RevA.pdf
CY7C0241E-15AXI
Виробник: Infineon Technologies
Description: IC SRAM 72KBIT PARALLEL 100TQFP
Packaging: Tray
Package / Case: 100-LQFP
Mounting Type: Surface Mount
Memory Size: 72Kbit
Memory Type: Volatile
Operating Temperature: -40°C ~ 85°C (TA)
Voltage - Supply: 4.5V ~ 5.5V
Technology: SRAM - Dual Port, Asynchronous
Memory Format: SRAM
Supplier Device Package: 100-TQFP (14x14)
Write Cycle Time - Word, Page: 15ns
Memory Interface: Parallel
Access Time: 15 ns
Memory Organization: 4K x 18
DigiKey Programmable: Not Verified
на замовлення 69 шт:
термін постачання 21-31 дні (днів)
Кількість Ціна
1+1180.19 грн
10+1051.80 грн
25+1037.59 грн
40+961.50 грн
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CY7C024-55AXC CY7C024%2CA%2C0241%2C%20CY7C025%2C0251.pdf
CY7C024-55AXC
Виробник: Infineon Technologies
Description: IC SRAM 64KBIT PARALLEL 100TQFP
Packaging: Tray
Package / Case: 100-LQFP
Mounting Type: Surface Mount
Memory Size: 64Kbit
Memory Type: Volatile
Operating Temperature: 0°C ~ 70°C (TA)
Voltage - Supply: 4.5V ~ 5.5V
Technology: SRAM - Dual Port, Asynchronous
Memory Format: SRAM
Supplier Device Package: 100-TQFP (14x14)
Write Cycle Time - Word, Page: 55ns
Memory Interface: Parallel
Access Time: 55 ns
Memory Organization: 4K x 16
DigiKey Programmable: Not Verified
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CY7C024-25AXC CY7C024%2CA%2C0241%2C%20CY7C025%2C0251.pdf
CY7C024-25AXC
Виробник: Infineon Technologies
Description: IC SRAM 64KBIT PARALLEL 100TQFP
Packaging: Tray
Package / Case: 100-LQFP
Mounting Type: Surface Mount
Memory Size: 64Kbit
Memory Type: Volatile
Operating Temperature: 0°C ~ 70°C (TA)
Voltage - Supply: 4.5V ~ 5.5V
Technology: SRAM - Dual Port, Asynchronous
Memory Format: SRAM
Supplier Device Package: 100-TQFP (14x14)
Write Cycle Time - Word, Page: 25ns
Memory Interface: Parallel
Access Time: 25 ns
Memory Organization: 4K x 16
DigiKey Programmable: Not Verified
товару немає в наявності
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CY7C024-25AXI CY7C024%2CA%2C0241%2C%20CY7C025%2C0251.pdf
CY7C024-25AXI
Виробник: Infineon Technologies
Description: IC SRAM 64KBIT PARALLEL 100TQFP
Packaging: Tray
Package / Case: 100-LQFP
Mounting Type: Surface Mount
Memory Size: 64Kbit
Memory Type: Volatile
Operating Temperature: -40°C ~ 85°C (TA)
Voltage - Supply: 4.5V ~ 5.5V
Technology: SRAM - Dual Port, Asynchronous
Memory Format: SRAM
Supplier Device Package: 100-TQFP (14x14)
Write Cycle Time - Word, Page: 25ns
Memory Interface: Parallel
Access Time: 25 ns
Memory Organization: 4K x 16
DigiKey Programmable: Not Verified
товару немає в наявності
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CY7C0241-25AXC CY7C024%2CA%2C0241%2C%20CY7C025%2C0251.pdf
CY7C0241-25AXC
Виробник: Infineon Technologies
Description: IC SRAM 72KBIT PARALLEL 100TQFP
Packaging: Tray
Package / Case: 100-LQFP
Mounting Type: Surface Mount
Memory Size: 72Kbit
Memory Type: Volatile
Operating Temperature: 0°C ~ 70°C (TA)
Voltage - Supply: 4.5V ~ 5.5V
Technology: SRAM - Dual Port, Asynchronous
Memory Format: SRAM
Supplier Device Package: 100-TQFP (14x14)
Write Cycle Time - Word, Page: 25ns
Memory Interface: Parallel
Access Time: 25 ns
Memory Organization: 4K x 18
DigiKey Programmable: Not Verified
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CY7C024A-25JXC CY7C024%2CA%2C0241%2C%20CY7C025%2C0251.pdf
CY7C024A-25JXC
Виробник: Infineon Technologies
Description: IC SRAM 64KBIT PARALLEL 84PLCC
Packaging: Tube
Package / Case: 84-LCC (J-Lead)
Mounting Type: Surface Mount
Memory Size: 64Kbit
Memory Type: Volatile
Operating Temperature: 0°C ~ 70°C (TA)
Voltage - Supply: 3V ~ 3.6V
Technology: SRAM - Dual Port, Asynchronous
Memory Format: SRAM
Supplier Device Package: 84-PLCC (29.31x29.31)
Write Cycle Time - Word, Page: 25ns
Memory Interface: Parallel
Access Time: 25 ns
Memory Organization: 4K x 16
DigiKey Programmable: Not Verified
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CY7C0241-15AXI CY7C024%2CA%2C0241%2C%20CY7C025%2C0251.pdf
CY7C0241-15AXI
Виробник: Infineon Technologies
Description: IC SRAM 72KBIT PARALLEL 100TQFP
Packaging: Tray
Package / Case: 100-LQFP
Mounting Type: Surface Mount
Memory Size: 72Kbit
Memory Type: Volatile
Operating Temperature: -40°C ~ 85°C (TA)
Voltage - Supply: 4.5V ~ 5.5V
Technology: SRAM - Dual Port, Asynchronous
Memory Format: SRAM
Supplier Device Package: 100-TQFP (14x14)
Write Cycle Time - Word, Page: 15ns
Memory Interface: Parallel
Access Time: 15 ns
Memory Organization: 4K x 18
DigiKey Programmable: Not Verified
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CY7C024-55AC CY7C024%2CA%2C0241%2C%20CY7C025%2C0251.pdf
CY7C024-55AC
Виробник: Infineon Technologies
Description: IC SRAM 64KBIT PARALLEL 100TQFP
Packaging: Bag
Package / Case: 100-LQFP
Mounting Type: Surface Mount
Memory Size: 64Kbit
Memory Type: Volatile
Operating Temperature: 0°C ~ 70°C (TA)
Voltage - Supply: 4.5V ~ 5.5V
Technology: SRAM - Dual Port, Asynchronous
Memory Format: SRAM
Supplier Device Package: 100-TQFP (14x14)
Write Cycle Time - Word, Page: 55ns
Memory Interface: Parallel
Access Time: 55 ns
Memory Organization: 4K x 16
DigiKey Programmable: Not Verified
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CY7C024-15AC CY7C024%2CA%2C0241%2C%20CY7C025%2C0251.pdf
CY7C024-15AC
Виробник: Infineon Technologies
Description: IC SRAM 64KBIT PARALLEL 100TQFP
Packaging: Bag
Package / Case: 100-LQFP
Mounting Type: Surface Mount
Memory Size: 64Kbit
Memory Type: Volatile
Operating Temperature: 0°C ~ 70°C (TA)
Voltage - Supply: 4.5V ~ 5.5V
Technology: SRAM - Dual Port, Asynchronous
Memory Format: SRAM
Supplier Device Package: 100-TQFP (14x14)
Write Cycle Time - Word, Page: 15ns
Memory Interface: Parallel
Access Time: 15 ns
Memory Organization: 4K x 16
DigiKey Programmable: Not Verified
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CY7C024AV-25AC CY7C0xxAV_RevH.pdf
CY7C024AV-25AC
Виробник: Infineon Technologies
Description: IC SRAM 64KBIT PARALLEL 100TQFP
Packaging: Tray
Package / Case: 100-LQFP
Mounting Type: Surface Mount
Memory Size: 64Kbit
Memory Type: Volatile
Operating Temperature: 0°C ~ 70°C (TA)
Voltage - Supply: 3V ~ 3.6V
Technology: SRAM - Dual Port, Asynchronous
Memory Format: SRAM
Supplier Device Package: 100-TQFP (14x14)
Write Cycle Time - Word, Page: 25ns
Memory Interface: Parallel
Access Time: 25 ns
Memory Organization: 4K x 16
DigiKey Programmable: Not Verified
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CY7C024AV-20AXCT CY7C024AV_25AV_26AV_RevT_8-1-17.pdf
CY7C024AV-20AXCT
Виробник: Infineon Technologies
Description: IC SRAM 64KBIT PARALLEL 100TQFP
Packaging: Tape & Reel (TR)
Package / Case: 100-LQFP
Mounting Type: Surface Mount
Memory Size: 64Kbit
Memory Type: Volatile
Operating Temperature: 0°C ~ 70°C (TA)
Voltage - Supply: 3V ~ 3.6V
Technology: SRAM - Dual Port, Asynchronous
Memory Format: SRAM
Supplier Device Package: 100-TQFP (14x14)
Write Cycle Time - Word, Page: 20ns
Memory Interface: Parallel
Access Time: 20 ns
Memory Organization: 4K x 16
DigiKey Programmable: Not Verified
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SKW07N120FKSA1 SKW07N120.pdf
SKW07N120FKSA1
Виробник: Infineon Technologies
Description: IGBT 1200V 16.5A 125W TO247
Packaging: Tube
Package / Case: TO-247-3
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Input Type: Standard
Reverse Recovery Time (trr): 60 ns
Vce(on) (Max) @ Vge, Ic: 3.6V @ 15V, 8A
Supplier Device Package: PG-TO247-3-1
IGBT Type: NPT
Td (on/off) @ 25°C: 27ns/440ns
Switching Energy: 1mJ
Test Condition: 800V, 8A, 47Ohm, 15V
Gate Charge: 70 nC
Current - Collector (Ic) (Max): 16.5 A
Voltage - Collector Emitter Breakdown (Max): 1200 V
Current - Collector Pulsed (Icm): 27 A
Power - Max: 125 W
на замовлення 1682 шт:
термін постачання 21-31 дні (днів)
Кількість Ціна
79+280.41 грн
Мінімальне замовлення: 79
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EVALISSI30R11HTOBO1 Infineon-UG-2023-18_EVAL_iSSI30R11H-UserManual-v01_00-EN.pdf?fileId=8ac78c8c8d1b852e018d2c5b86fe5c61
EVALISSI30R11HTOBO1
Виробник: Infineon Technologies
Description: EVAL BOARD FOR ISSI30R11H
Packaging: Box
Function: Isolator
Type: Interface
Contents: Board(s)
Utilized IC / Part: iSSI30R11H
Supplied Contents: Board(s)
Primary Attributes: 2.5V ~ 3.5V Input Voltage
Embedded: No
на замовлення 7 шт:
термін постачання 21-31 дні (днів)
Кількість Ціна
1+13647.34 грн
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CYAT81685-100AA71Z Infineon-CYAT81682-100AA61Z-DataSheet-v01_00-EN.pdf?fileId=8ac78c8c82ce566401837edabc100b8b
CYAT81685-100AA71Z
Виробник: Infineon Technologies
Description: PSOC BASED - TRUETOUCH
Packaging: Tray
Package / Case: 100-LQFP
Mounting Type: Surface Mount
Interface: I2C, SPI
Operating Temperature: -40°C ~ 85°C (TA)
Voltage - Supply: 1.71V ~ 1.95V, 3V ~ 5.5V
Supplier Device Package: 100-TQFP (14x14)
Touchscreen: 2 Wire Capacitive
Grade: Automotive
Qualification: AEC-Q100
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IRFB4127PBFXKMA1
Виробник: Infineon Technologies
Description: TRENCH >=100V
Packaging: Tube
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BTS700201ESPXUMA2 Infineon-BTS70020-1ESP-DataSheet-v01_20-EN.pdf?fileId=5546d462758f5bd101759850731539ad
BTS700201ESPXUMA2
Виробник: Infineon Technologies
Description: PROFET PG-TSDSO-24
Packaging: Cut Tape (CT)
Package / Case: 24-TSSOP (0.154", 3.90mm Width) Exposed Pad
Output Type: N-Channel
Mounting Type: Surface Mount
Number of Outputs: 1
Switch Type: Relay, Solenoid Driver
Operating Temperature: -40°C ~ 150°C (TJ)
Output Configuration: High Side
Rds On (Typ): 2.3mOhm
Input Type: Non-Inverting
Voltage - Load: 4.1V ~ 28V
Voltage - Supply (Vcc/Vdd): 4.1V ~ 28V
Current - Output (Max): 23.2A
Ratio - Input:Output: 1:1
Supplier Device Package: PG-TSDSO-24-32
Fault Protection: Current Limiting (Fixed), Open Load Detect, Over Temperature, Over Voltage, Reverse Battery, UVLO
на замовлення 1877 шт:
термін постачання 21-31 дні (днів)
Кількість Ціна
2+267.39 грн
10+193.58 грн
25+177.79 грн
100+150.50 грн
250+142.71 грн
500+138.02 грн
1000+131.95 грн
Мінімальне замовлення: 2
В кошику  од. на суму  грн.
FF5MR20KM1HPHPSA1 Infineon-FF5MR20KM1HP-DataSheet-v00_10-EN.pdf?fileId=8ac78c8c8d2fe47b018dc623a8dc0d8c
FF5MR20KM1HPHPSA1
Виробник: Infineon Technologies
Description: MEDIUM POWER 62MM
Packaging: Tray
на замовлення 14 шт:
термін постачання 21-31 дні (днів)
Кількість Ціна
1+29372.54 грн
В кошику  од. на суму  грн.
XC2365B40F80LAAKXUMA1 Infineon-SAK-XC2365B-40F80LR%20AB-DataSheet-v01_05-EN.pdf?fileId=5546d4626b2d8e69016b46cda5a330d0
XC2365B40F80LAAKXUMA1
Виробник: Infineon Technologies
Description: IC MCU 16/32B 320KB FLSH 100LQFP
Packaging: Tape & Reel (TR)
Package / Case: 100-LQFP Exposed Pad
Mounting Type: Surface Mount
Speed: 80MHz
Program Memory Size: 320KB (320K x 8)
RAM Size: 34K x 8
Operating Temperature: -40°C ~ 125°C (TA)
Oscillator Type: Internal
Program Memory Type: FLASH
Core Processor: C166SV2
Data Converters: A/D 16x10b
Core Size: 16/32-Bit
Voltage - Supply (Vcc/Vdd): 3V ~ 5.5V
Connectivity: CANbus, EBI/EMI, I2C, LINbus, SPI, SSC, UART/USART, USI
Peripherals: I2S, POR, PWM, WDT
Supplier Device Package: PG-LQFP-100-8
Number of I/O: 76
DigiKey Programmable: Not Verified
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PSB 6970 HL V1.3 PSB697x.pdf
PSB 6970 HL V1.3
Виробник: Infineon Technologies
Description: IC TELECOM INTERFACE LQFP-100
Packaging: Tray
Package / Case: 100-LQFP Exposed Pad
Mounting Type: Surface Mount
Function: Ethernet Switch Controller
Interface: TX / FX
Voltage - Supply: 3.3V
Supplier Device Package: PG-LQFP-100
Number of Circuits: 1
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SAF-XE164HN-24F80L AA Infineon-SAK-XE164FN-40F80LR%20AB-DataSheet-v01_40-EN.pdf?fileId=8ac78c8c8d2fe47b018dc5cc3b160cb9
SAF-XE164HN-24F80L AA
Виробник: Infineon Technologies
Description: IC MCU 16BIT 192KB FLASH 100LQFP
Packaging: Tape & Reel (TR)
Package / Case: 100-LQFP Exposed Pad
Mounting Type: Surface Mount
Speed: 80MHz
Program Memory Size: 192KB (192K x 8)
RAM Size: 26K x 8
Operating Temperature: -40°C ~ 85°C (TA)
Oscillator Type: Internal
Program Memory Type: FLASH
Core Processor: C166SV2
Data Converters: A/D 16x10b
Core Size: 16-Bit
Voltage - Supply (Vcc/Vdd): 3V ~ 5.5V
Connectivity: EBI/EMI, I2C, LINbus, SPI, SSC, UART/USART, USI
Peripherals: I2S, POR, PWM, WDT
Supplier Device Package: PG-LQFP-100-8
Number of I/O: 75
DigiKey Programmable: Not Verified
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IPP011N03LF2SAKSA1 Infineon-IPP011N03LF2S-DataSheet-v02_00-EN.pdf?fileId=8ac78c8c901008d101902fe1fa872535
IPP011N03LF2SAKSA1
Виробник: Infineon Technologies
Description: TRENCH <= 40V
Packaging: Tube
Package / Case: TO-220-3
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 46A (Ta), 210A (Tc)
Rds On (Max) @ Id, Vgs: 1.05mOhm @ 100A, 10V
Power Dissipation (Max): 3.8W (Ta), 375W (Tc)
Vgs(th) (Max) @ Id: 2.35V @ 250µA
Supplier Device Package: PG-TO220-3-U05
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 30 V
Gate Charge (Qg) (Max) @ Vgs: 336 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 15100 pF @ 15 V
на замовлення 790 шт:
термін постачання 21-31 дні (днів)
Кількість Ціна
2+169.51 грн
10+135.64 грн
100+103.82 грн
500+78.73 грн
Мінімальне замовлення: 2
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IPTC026N12NM6ATMA1 Infineon-IPTC026N12NM6-DataSheet-v02_00-EN.pdf?fileId=8ac78c8c8d2fe47b018d35cc74f919ef
IPTC026N12NM6ATMA1
Виробник: Infineon Technologies
Description: TRENCH >=100V
Packaging: Tape & Reel (TR)
Package / Case: 16-PowerSOP Module
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 26A (Ta), 222A (Tc)
Rds On (Max) @ Id, Vgs: 2.6mOhm @ 115A, 10V
Power Dissipation (Max): 3.8W (Ta), 278W (Tc)
Vgs(th) (Max) @ Id: 3.6V @ 169µA
Supplier Device Package: PG-HDSOP-16-2
Drive Voltage (Max Rds On, Min Rds On): 8V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 120 V
Gate Charge (Qg) (Max) @ Vgs: 88 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 6500 pF @ 60 V
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IPTC026N12NM6ATMA1 Infineon-IPTC026N12NM6-DataSheet-v02_00-EN.pdf?fileId=8ac78c8c8d2fe47b018d35cc74f919ef
IPTC026N12NM6ATMA1
Виробник: Infineon Technologies
Description: TRENCH >=100V
Packaging: Cut Tape (CT)
Package / Case: 16-PowerSOP Module
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 26A (Ta), 222A (Tc)
Rds On (Max) @ Id, Vgs: 2.6mOhm @ 115A, 10V
Power Dissipation (Max): 3.8W (Ta), 278W (Tc)
Vgs(th) (Max) @ Id: 3.6V @ 169µA
Supplier Device Package: PG-HDSOP-16-2
Drive Voltage (Max Rds On, Min Rds On): 8V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 120 V
Gate Charge (Qg) (Max) @ Vgs: 88 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 6500 pF @ 60 V
на замовлення 552 шт:
термін постачання 21-31 дні (днів)
Кількість Ціна
1+478.28 грн
10+340.87 грн
100+246.61 грн
500+209.13 грн
В кошику  од. на суму  грн.
IPQC60R040S7AXTMA1 Infineon-IPQC60R040S7A-DataSheet-v02_00-EN.pdf?fileId=8ac78c8c850f4bee0185150cb48e6cfc
IPQC60R040S7AXTMA1
Виробник: Infineon Technologies
Description: MOSFET
Packaging: Tape & Reel (TR)
Package / Case: 22-PowerBSOP Module
Mounting Type: Surface Mount
Operating Temperature: -40°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 14A (Tc)
Rds On (Max) @ Id, Vgs: 40mOhm @ 13A, 12V
Power Dissipation (Max): 272W (Tc)
Vgs(th) (Max) @ Id: 4.5V @ 790µA
Supplier Device Package: PG-HDSOP-22
Grade: Automotive
Drive Voltage (Max Rds On, Min Rds On): 12V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 600 V
Gate Charge (Qg) (Max) @ Vgs: 83 nC @ 12 V
Qualification: AEC-Q101
на замовлення 750 шт:
термін постачання 21-31 дні (днів)
Кількість Ціна
750+363.07 грн
Мінімальне замовлення: 750
В кошику  од. на суму  грн.
IPQC60R040S7AXTMA1 Infineon-IPQC60R040S7A-DataSheet-v02_00-EN.pdf?fileId=8ac78c8c850f4bee0185150cb48e6cfc
IPQC60R040S7AXTMA1
Виробник: Infineon Technologies
Description: MOSFET
Packaging: Cut Tape (CT)
Package / Case: 22-PowerBSOP Module
Mounting Type: Surface Mount
Operating Temperature: -40°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 14A (Tc)
Rds On (Max) @ Id, Vgs: 40mOhm @ 13A, 12V
Power Dissipation (Max): 272W (Tc)
Vgs(th) (Max) @ Id: 4.5V @ 790µA
Supplier Device Package: PG-HDSOP-22
Grade: Automotive
Drive Voltage (Max Rds On, Min Rds On): 12V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 600 V
Gate Charge (Qg) (Max) @ Vgs: 83 nC @ 12 V
Qualification: AEC-Q101
на замовлення 750 шт:
термін постачання 21-31 дні (днів)
Кількість Ціна
1+576.17 грн
10+475.43 грн
100+396.25 грн
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IRGS4062DTRLPBF IRGS%28SL%294062DPbF.pdf
IRGS4062DTRLPBF
Виробник: Infineon Technologies
Description: IGBT TRENCH 600V 48A TO263-3
Packaging: Tape & Reel (TR)
Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Input Type: Standard
Reverse Recovery Time (trr): 89 ns
Vce(on) (Max) @ Vge, Ic: 1.95V @ 15V, 24A
Supplier Device Package: PG-TO263-3
IGBT Type: Trench
Td (on/off) @ 25°C: 41ns/104ns
Switching Energy: 115µJ (on), 600µJ (off)
Test Condition: 400V, 24A, 10Ohm, 15V
Gate Charge: 50 nC
Current - Collector (Ic) (Max): 48 A
Voltage - Collector Emitter Breakdown (Max): 600 V
Current - Collector Pulsed (Icm): 96 A
Power - Max: 250 W
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IRF7458PBF irf7458pbf.pdf?fileId=5546d462533600a4015355fecb231bfe
IRF7458PBF
Виробник: Infineon Technologies
Description: MOSFET N-CH 30V 14A 8SO
Packaging: Tube
Package / Case: 8-SOIC (0.154", 3.90mm Width)
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 14A (Ta)
Rds On (Max) @ Id, Vgs: 8mOhm @ 14A, 16V
Power Dissipation (Max): 2.5W (Ta)
Vgs(th) (Max) @ Id: 4V @ 250µA
Supplier Device Package: 8-SO
Drive Voltage (Max Rds On, Min Rds On): 10V, 16V
Vgs (Max): ±30V
Drain to Source Voltage (Vdss): 30 V
Gate Charge (Qg) (Max) @ Vgs: 59 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 2410 pF @ 15 V
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S25FL256SDPMFV000 Infineon-S25FL128S_S25FL256S_128_Mb_(16_MB)_256_Mb_(32_MB)_3.0V_SPI_Flash_Memory-DataSheet-v18_00-EN.pdf?fileId=8ac78c8c7d0d8da4017d0ecfb6a64a17
S25FL256SDPMFV000
Виробник: Infineon Technologies
Description: IC FLASH 256MBIT SPI/QUAD 16SOIC
Packaging: Tray
Package / Case: 16-SOIC (0.295", 7.50mm Width)
Mounting Type: Surface Mount
Memory Size: 256Mbit
Memory Type: Non-Volatile
Operating Temperature: -40°C ~ 105°C (TA)
Voltage - Supply: 2.7V ~ 3.6V
Technology: FLASH - NOR
Clock Frequency: 66 MHz
Memory Format: FLASH
Supplier Device Package: 16-SOIC
Memory Interface: SPI - Quad I/O
Memory Organization: 32M x 8
DigiKey Programmable: Not Verified
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CY8C4247AZS-M485T
CY8C4247AZS-M485T
Виробник: Infineon Technologies
Description: IC MCU 32BIT 128KB FLASH 64LQFP
Packaging: Tape & Reel (TR)
Package / Case: 64-LQFP
Mounting Type: Surface Mount
Speed: 48MHz
Program Memory Size: 128KB (128K x 8)
RAM Size: 16K x 8
Operating Temperature: -40°C ~ 105°C (TA)
Oscillator Type: External, Internal
Program Memory Type: FLASH
Core Processor: ARM® Cortex®-M0
Data Converters: A/D 24x12b SAR; D/A 4x7/8b
Core Size: 32-Bit
Voltage - Supply (Vcc/Vdd): 1.71V ~ 5.5V
Connectivity: CANbus, I2C, IrDA, LINbus, Microwire, SmartCard, SPI, SSP, UART/USART
Peripherals: Brown-out Detect/Reset, Cap Sense, LCD, LVD, POR, PWM, SmartSense, WDT
Supplier Device Package: 64-TQFP (10x10)
Grade: Automotive
Number of I/O: 51
Qualification: AEC-Q100
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TLE82092EXUMA2 Infineon-TLE8209-2SA-DS-v01_02-EN.pdf?fileId=5546d4624a0bf290014a0f5818836a1e
TLE82092EXUMA2
Виробник: Infineon Technologies
Description: IC MOTOR DRIVER 4.4V-5.25V 20DSO
Packaging: Tape & Reel (TR)
Package / Case: 20-SOIC (0.433", 11.00mm Width) Exposed Pad
Mounting Type: Surface Mount
Function: Driver - Fully Integrated, Control and Power Stage
Current - Output: 8.6A
Interface: SPI
Operating Temperature: -40°C ~ 150°C (TJ)
Output Configuration: Half Bridge (2)
Voltage - Supply: 4.4V ~ 5.25V
Technology: Power MOSFET
Voltage - Load: 4.5V ~ 28V
Supplier Device Package: PG-DSO-20-65
Motor Type - AC, DC: Brushed DC
Grade: Automotive
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BTT60201ERAXUMA1 Infineon-BTT6020-1ERA-DS-v01_00-EN.pdf?fileId=5546d46269e1c019016a21e800960d76
BTT60201ERAXUMA1
Виробник: Infineon Technologies
Description: IC PWR SWITCH N-CHAN 1:1 TDSO-14
Packaging: Cut Tape (CT)
Package / Case: 14-SOIC (0.154", 3.90mm Width) Exposed Pad
Output Type: N-Channel
Mounting Type: Surface Mount
Number of Outputs: 1
Interface: On/Off
Switch Type: General Purpose
Operating Temperature: -40°C ~ 150°C (TJ)
Output Configuration: High Side
Rds On (Typ): 20mOhm
Input Type: Non-Inverting
Voltage - Load: 5V ~ 36V
Voltage - Supply (Vcc/Vdd): Not Required
Current - Output (Max): 7A
Ratio - Input:Output: 1:1
Supplier Device Package: PG-TDSO-14-11
Fault Protection: Current Limiting (Fixed), Open Load Detect, Over Temperature, Over Voltage
Grade: Automotive
Qualification: AEC-Q100
на замовлення 731 шт:
термін постачання 21-31 дні (днів)
Кількість Ціна
2+230.78 грн
10+166.52 грн
25+152.59 грн
100+128.85 грн
250+122.01 грн
500+117.89 грн
Мінімальне замовлення: 2
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KP276D1201XTMA1 Infineon-KP276D1201-DataSheet-v01_00-EN.pdf?fileId=8ac78c8c7d0d8da4017d0fd7eeeb2fe1
KP276D1201XTMA1
Виробник: Infineon Technologies
Description: SENSOR 58.02PSIA 12BIT DSOF8
Features: Temperature Compensated
Packaging: Tape & Reel (TR)
Package / Case: 8-SMD Module
Output Type: SENT
Mounting Type: Surface Mount
Output: 12 b
Operating Pressure: 1.45 ~ 58.02PSI (10kPa ~ 400kPa)
Pressure Type: Absolute
Accuracy: ±0.77%
Operating Temperature: -40°C ~ 150°C
Termination Style: SMD (SMT) Tab
Voltage - Supply: 4.5V ~ 5.5V
Supplier Device Package: PG-DSOF-8-162
Port Style: No Port
Grade: Automotive
Qualification: AEC-Q100
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CYT4DNJBMCQ1BZSGS Infineon-TRAVEO_T2G_CYT4DN-DataSheet-v01_00-EN.pdf?fileId=8ac78c8c869190210186f0cceff43fd0
Виробник: Infineon Technologies
Description: TRAVEO-2 CLUST.2.5DGRAPH
Packaging: Tray
Package / Case: 327-LFBGA
Mounting Type: Surface Mount
Speed: 100MHz, 320MHz
Program Memory Size: 6.19MB (6.19M x 8)
RAM Size: 640K x 8
Operating Temperature: -40°C ~ 105°C (TA)
Oscillator Type: External, Internal
Program Memory Type: FLASH
EEPROM Size: 128K x 8
Core Processor: ARM® Cortex®-M0+, ARM® Cortex®-M7F
Data Converters: A/D 48x12b SAR
Core Size: 32-Bit Tri-Core
Voltage - Supply (Vcc/Vdd): 2.7V ~ 5.5V
Connectivity: CANbus, Ethernet, I2C, LINbus, SPI, UART/USART
Peripherals: DMA, I2S, LVD, Temp Sensor, WDT
Supplier Device Package: 327-FBGA (17x17)
Number of I/O: 168
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