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IRLU3636PBF IRLU3636PBF Infineon Technologies IRSDS10828-1.pdf?t.download=true&u=5oefqw Description: MOSFET N-CH 60V 50A IPAK
Packaging: Tube
Package / Case: TO-251-3 Short Leads, IPak, TO-251AA
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 50A (Tc)
Rds On (Max) @ Id, Vgs: 6.8mOhm @ 50A, 10V
Power Dissipation (Max): 143W (Tc)
Vgs(th) (Max) @ Id: 2.5V @ 100µA
Supplier Device Package: IPAK
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±16V
Drain to Source Voltage (Vdss): 60 V
Gate Charge (Qg) (Max) @ Vgs: 49 nC @ 4.5 V
Input Capacitance (Ciss) (Max) @ Vds: 3779 pF @ 50 V
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CY62177GE30-55ZXIT CY62177GE30-55ZXIT Infineon Technologies Infineon-CY62177G30_CY62177GE30_MoBL_32-Mbit_(2M_words_16-bit_4M_words_8-bit)_Static_RAM_with_Error-Correcting_Code_(ECC)-DataSheet-v04_00-EN.pdf?fileId=8ac78c8c7d0d8da4017d0ee97f1d725c Description: IC SRAM 32MBIT PARALLEL 48TSOP I
Packaging: Tape & Reel (TR)
Package / Case: 48-TFSOP (0.724", 18.40mm Width)
Mounting Type: Surface Mount
Memory Size: 32Mbit
Memory Type: Volatile
Operating Temperature: -40°C ~ 85°C (TA)
Voltage - Supply: 2.2V ~ 3.6V
Technology: SRAM - Asynchronous
Memory Format: SRAM
Supplier Device Package: 48-TSOP I
Write Cycle Time - Word, Page: 55ns
Memory Interface: Parallel
Access Time: 55 ns
Memory Organization: 2M x 16
DigiKey Programmable: Not Verified
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CY62177GE30-55ZXI CY62177GE30-55ZXI Infineon Technologies Infineon-CY62177G30_CY62177GE30_MoBL_32-Mbit_(2M_words_16-bit_4M_words_8-bit)_Static_RAM_with_Error-Correcting_Code_(ECC)-DataSheet-v04_00-EN.pdf?fileId=8ac78c8c7d0d8da4017d0ee97f1d725c Description: IC SRAM 32MBIT PARALLEL 48TSOP I
Packaging: Tray
Package / Case: 48-TFSOP (0.724", 18.40mm Width)
Mounting Type: Surface Mount
Memory Size: 32Mbit
Memory Type: Volatile
Operating Temperature: -40°C ~ 85°C (TA)
Voltage - Supply: 2.2V ~ 3.6V
Technology: SRAM - Asynchronous
Memory Format: SRAM
Supplier Device Package: 48-TSOP I
Write Cycle Time - Word, Page: 55ns
Memory Interface: Parallel
Access Time: 55 ns
Memory Organization: 2M x 16
DigiKey Programmable: Not Verified
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CY7C1382D-200AXC CY7C1382D-200AXC Infineon Technologies Description: IC SRAM 18MBIT PARALLEL 100TQFP
Packaging: Tray
Package / Case: 100-LQFP
Mounting Type: Surface Mount
Memory Size: 18Mbit
Memory Type: Volatile
Operating Temperature: 0°C ~ 70°C (TA)
Voltage - Supply: 3.135V ~ 3.6V
Technology: SRAM - Synchronous, SDR
Clock Frequency: 200 MHz
Memory Format: SRAM
Supplier Device Package: 100-TQFP (14x20)
Memory Interface: Parallel
Access Time: 3 ns
Memory Organization: 1M x 18
DigiKey Programmable: Not Verified
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CY7C1370D-200BGXC CY7C1370D-200BGXC Infineon Technologies CY7C1370%2C72D.pdf Description: IC SRAM 18MBIT PARALLEL 119PBGA
Packaging: Tray
Package / Case: 119-BGA
Mounting Type: Surface Mount
Memory Size: 18Mbit
Memory Type: Volatile
Operating Temperature: 0°C ~ 70°C (TA)
Voltage - Supply: 3.135V ~ 3.6V
Technology: SRAM - Synchronous, SDR
Clock Frequency: 200 MHz
Memory Format: SRAM
Supplier Device Package: 119-PBGA (14x22)
Memory Interface: Parallel
Access Time: 3 ns
Memory Organization: 512K x 36
DigiKey Programmable: Not Verified
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CY7C1370D-200AXC CY7C1370D-200AXC Infineon Technologies Description: IC SRAM 18MBIT PARALLEL 100TQFP
Packaging: Tray
Package / Case: 100-LQFP
Mounting Type: Surface Mount
Memory Size: 18Mbit
Memory Type: Volatile
Operating Temperature: 0°C ~ 70°C (TA)
Voltage - Supply: 3.135V ~ 3.6V
Technology: SRAM - Synchronous, SDR
Clock Frequency: 200 MHz
Memory Format: SRAM
Supplier Device Package: 100-TQFP (14x20)
Memory Interface: Parallel
Access Time: 3 ns
Memory Organization: 512K x 36
DigiKey Programmable: Not Verified
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FD200R12KE3PHOSA1 FD200R12KE3PHOSA1 Infineon Technologies Infineon-FD200R12KE3P-DS-v02_00-EN.pdf?fileId=5546d46253e9fadc0153efbccd9b3c14 Description: IGBT MODULE 1200V 200A
Packaging: Tray
Package / Case: Module
Mounting Type: Chassis Mount
Input: Standard
Configuration: Single
Operating Temperature: -40°C ~ 125°C
Vce(on) (Max) @ Vge, Ic: 2.15V @ 15V, 200A
NTC Thermistor: No
Supplier Device Package: Module
IGBT Type: Trench Field Stop
Current - Collector (Ic) (Max): 200 A
Voltage - Collector Emitter Breakdown (Max): 1200 V
Current - Collector Cutoff (Max): 5 mA
Input Capacitance (Cies) @ Vce: 14 nF @ 25 V
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D2000U65X122XPSA1 D2000U65X122XPSA1 Infineon Technologies Description: HIGH POWER THYR / DIO
Packaging: Tray
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BGT24ATR22E6433XUMA1 BGT24ATR22E6433XUMA1 Infineon Technologies Description: BGT24ATR22E6433XUMA1
Packaging: Tape & Reel (TR)
Package / Case: 32-PowerVFQFN
Mounting Type: Surface Mount
Function: VCO
Frequency: 24GHz ~ 24.25GHz
RF Type: Radar
Secondary Attributes: ADC
Supplier Device Package: PG-VQFN-32-9
Grade: Automotive
Qualification: AEC-Q100
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BGT24ATR22E6433XUMA1 BGT24ATR22E6433XUMA1 Infineon Technologies Description: BGT24ATR22E6433XUMA1
Packaging: Cut Tape (CT)
Package / Case: 32-PowerVFQFN
Mounting Type: Surface Mount
Function: VCO
Frequency: 24GHz ~ 24.25GHz
RF Type: Radar
Secondary Attributes: ADC
Supplier Device Package: PG-VQFN-32-9
Grade: Automotive
Qualification: AEC-Q100
на замовлення 296 шт:
термін постачання 21-31 дні (днів)
1+903.50 грн
10+660.73 грн
25+608.29 грн
100+516.75 грн
250+490.95 грн
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TLE9274QXV33XUMA2 TLE9274QXV33XUMA2 Infineon Technologies Infineon-TLE9274QX%20V33-DataSheet-v02_00-EN.pdf?fileId=5546d4627762291e01776d6101847b85 Description: OPTIREG SYST BASIS CHIPS
Packaging: Tape & Reel (TR)
Package / Case: 48-VFQFN Exposed Pad
Mounting Type: Surface Mount
Number of Outputs: 3
Voltage - Input: 4.5V ~ 28V
Operating Temperature: -40°C ~ 150°C (TJ)
Applications: Converter, Automotive
Supplier Device Package: PG-VQFN-48-31
Grade: Automotive
Qualification: AEC-Q100
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CY241V8ASXC-12 CY241V8ASXC-12 Infineon Technologies CY241V08A-12.pdf Description: IC CLOCK GENERATOR 8SOIC
Packaging: Tube
Package / Case: 8-SOIC (0.154", 3.90mm Width)
Mounting Type: Surface Mount
Output: Clock
Frequency - Max: 74.25MHz
Type: Clock Generator, Fanout Distribution
Input: Clock
Operating Temperature: 0°C ~ 70°C
Voltage - Supply: 3.135V ~ 3.465V
Ratio - Input:Output: 1:2
Differential - Input:Output: No/No
Supplier Device Package: 8-SOIC
PLL: Yes with Bypass
Divider/Multiplier: Yes/No
Number of Circuits: 1
DigiKey Programmable: Not Verified
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EVALCO25VMINIBOARDTOBO1 EVALCO25VMINIBOARDTOBO1 Infineon Technologies Infineon-User_manual_EVAL_CO2_5V_MINIBOARD-UserManual-v01_02-EN.pdf?fileId=8ac78c8c8d2fe47b018df40eb06f7004 Description: EVAL BOARD
Packaging: Box
Sensitivity: ±3%
Interface: I2C, PWM, UART
Voltage - Supply: 3.3V
Sensor Type: Carbon Dioxide (CO2)
Utilized IC / Part: PAS CO2
Supplied Contents: Board(s)
Embedded: Yes, MCU
Contents: Board(s)
на замовлення 69 шт:
термін постачання 21-31 дні (днів)
1+1439.64 грн
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EVALCO25VSENSOR2GOTOBO1 EVALCO25VSENSOR2GOTOBO1 Infineon Technologies Infineon-Quickstart_guide_PAS_CO2_Sensor2Go_eval-UserManual-v01_03-EN.pdf?fileId=8ac78c8c8d2fe47b018ded80a4b76bcf Description: EVAL BOARD
Packaging: Box
Sensitivity: ±3%
Interface: I2C, PWM, UART
Voltage - Supply: 3.3V
Sensor Type: Carbon Dioxide (CO2)
Utilized IC / Part: PAS CO2
Supplied Contents: Board(s)
Embedded: Yes, MCU
Contents: Board(s)
на замовлення 13 шт:
термін постачання 21-31 дні (днів)
1+2456.96 грн
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PASCO2V15AUMA1 PASCO2V15AUMA1 Infineon Technologies Infineon-XENSIV_PAS_CO2_5V_Sensor-ProductBrief-v01_00-EN.pdf?fileId=8ac78c8c8d2fe47b018e2da2d3ab413c Description: PASCO2V15AUMA1
Packaging: Tape & Reel (TR)
Output: I2C, PWM, UART
Type: Carbon Dioxide (CO2)
Accuracy: ±5%
Operating Temperature: 0°C ~ 50°C
Voltage - Supply: 4.45V ~ 5.5V
Oxygen Range: 0 mbar ~ 800 bar
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PASCO2V15AUMA1 PASCO2V15AUMA1 Infineon Technologies Infineon-XENSIV_PAS_CO2_5V_Sensor-ProductBrief-v01_00-EN.pdf?fileId=8ac78c8c8d2fe47b018e2da2d3ab413c Description: PASCO2V15AUMA1
Packaging: Cut Tape (CT)
Output: I2C, PWM, UART
Type: Carbon Dioxide (CO2)
Accuracy: ±5%
Operating Temperature: 0°C ~ 50°C
Voltage - Supply: 4.45V ~ 5.5V
Oxygen Range: 0 mbar ~ 800 bar
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PASCO2V01AUMA3 PASCO2V01AUMA3 Infineon Technologies Infineon-PASCO2V01-DataSheet-v01_70-EN.pdf?fileId=8ac78c8c80027ecd01809278f1af1ba2 Description: SENSOR CARBON DIOXIDE I2C OUTPUT
Packaging: Tape & Reel (TR)
Output: I2C, PWM, UART
Type: Carbon Dioxide (CO2)
Accuracy: ±3%
Operating Temperature: 0°C ~ 50°C
Voltage - Supply: 10.8V ~ 13.2V
Oxygen Range: 0 mbar ~ 800 bar
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PASCO2V11AUMA1 Infineon Technologies Description: SENSOR ENVIRONMENTAL
Packaging: Tape & Reel (TR)
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PASCO2V01AUMA2 PASCO2V01AUMA2 Infineon Technologies Description: SENSOR CARBON DIOXIDE I2C OUTPUT
Packaging: Tape & Reel (TR)
Output: I2C, PWM, UART
Type: Carbon Dioxide (CO2)
Operating Temperature: 0°C ~ 50°C (TA)
Voltage - Supply: 3V ~ 3.6V, 10.8V ~ 13.2V
Current - Supply: 800µA, 6.1mA
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4DIR1420HAXUMA1 4DIR1420HAXUMA1 Infineon Technologies Infineon-Datasheet_ISOFACE(TM)_4DIRx4xxHA_family-DataSheet-v01_00-EN.pdf?fileId=8ac78c8c8929aa4d01899cd5eb0a5610 Description: DIGITAL ISOLATORS
Packaging: Tape & Reel (TR)
Package / Case: 16-SOIC (0.295", 7.50mm Width)
Mounting Type: Surface Mount
Type: SPI
Operating Temperature: -40°C ~ 125°C
Voltage - Supply: 2.7V ~ 6.5V
Data Rate: 40Mbps
Technology: Magnetic Coupling
Voltage - Isolation: 5700Vrms
Inputs - Side 1/Side 2: 3/1
Supplier Device Package: PG-DSO-16-46
Rise / Fall Time (Typ): 4ns, 4ns (Max)
Common Mode Transient Immunity (Min): 100kV/µs
Propagation Delay tpLH / tpHL (Max): 33ns, 33ns
Isolated Power: Yes
Channel Type: Unidirectional
Pulse Width Distortion (Max): 3ns
Grade: Automotive
Number of Channels: 4
Qualification: AEC-Q100
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4DIR1420HAXUMA1 4DIR1420HAXUMA1 Infineon Technologies Infineon-Datasheet_ISOFACE(TM)_4DIRx4xxHA_family-DataSheet-v01_00-EN.pdf?fileId=8ac78c8c8929aa4d01899cd5eb0a5610 Description: DIGITAL ISOLATORS
Packaging: Cut Tape (CT)
Package / Case: 16-SOIC (0.295", 7.50mm Width)
Mounting Type: Surface Mount
Type: SPI
Operating Temperature: -40°C ~ 125°C
Voltage - Supply: 2.7V ~ 6.5V
Data Rate: 40Mbps
Technology: Magnetic Coupling
Voltage - Isolation: 5700Vrms
Inputs - Side 1/Side 2: 3/1
Supplier Device Package: PG-DSO-16-46
Rise / Fall Time (Typ): 4ns, 4ns (Max)
Common Mode Transient Immunity (Min): 100kV/µs
Propagation Delay tpLH / tpHL (Max): 33ns, 33ns
Isolated Power: Yes
Channel Type: Unidirectional
Pulse Width Distortion (Max): 3ns
Grade: Automotive
Number of Channels: 4
Qualification: AEC-Q100
на замовлення 1486 шт:
термін постачання 21-31 дні (днів)
2+193.89 грн
10+124.65 грн
100+95.91 грн
500+81.36 грн
Мінімальне замовлення: 2
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PEB22320NV2.1 Infineon Technologies Description: CLOCK GENERATOR
Packaging: Bulk
DigiKey Programmable: Not Verified
на замовлення 415 шт:
термін постачання 21-31 дні (днів)
16+1398.13 грн
Мінімальне замовлення: 16
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CY4603 CY4603 Infineon Technologies Infineon-CY4603_HX3_USB_3.0_Hub_Development_Kit_(DVK)_Quick_Start_Guide-UserManual-v01_00-EN.pdf?fileId=8ac78c8c7d0d8da4017d0ef8e51d0e82&utm_source=cypress&utm_medium=referral&utm_campaign=202110_globe_en_all_integration-file Description: EVAL BOARD HX3 USB HUB CYUSB3314
Packaging: Box
Function: USB 3.0 Hub
Type: Interface
Contents: Board(s), Cable(s), Power Supply
Utilized IC / Part: CYUSB3314
Primary Attributes: 4-Channel (Quad)
Secondary Attributes: I2C Interface(s)
на замовлення 10 шт:
термін постачання 21-31 дні (днів)
1+7077.31 грн
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BGSX24MU16E6327XTSA1 Infineon Technologies Description: IC RF SWITCH DP4T 5GHZ ULGA16-1
Features: DC Blocked
Packaging: Tape & Reel (TR)
Package / Case: 16-UFLGA Exposed Pad
Mounting Type: Surface Mount
Circuit: DP4T
RF Type: GSM, LTE, WCDMA
Operating Temperature: -40°C ~ 85°C
Voltage - Supply: 1.65V ~ 3.4V
Insertion Loss: 1dB
Frequency Range: 100MHz ~ 5GHz
Topology: Reflective
Test Frequency: 5GHz
Isolation: 34dB
Supplier Device Package: PG-ULGA-16-1
IIP3: 77dBm
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S29GL064N90FAI040 S29GL064N90FAI040 Infineon Technologies Infineon-S29GL064N_S29GL032N_64_Mbit_32_Mbit_3_V_Page_Mode_MirrorBit_Flash-DataSheet-v03_00-EN.pdf?fileId=8ac78c8c7d0d8da4017d0ed556fd548b&utm_source=cypress&utm_medium=referral&utm_campaign=202110_globe_en_all_integration-fi Description: IC FLASH 64MBIT PARALLEL 64FBGA
Packaging: Tray
Package / Case: 64-LBGA
Mounting Type: Surface Mount
Memory Size: 64Mbit
Memory Type: Non-Volatile
Operating Temperature: -40°C ~ 85°C (TA)
Voltage - Supply: 2.7V ~ 3.6V
Technology: FLASH - NOR
Memory Format: FLASH
Supplier Device Package: 64-FBGA (13x11)
Write Cycle Time - Word, Page: 90ns
Memory Interface: Parallel
Access Time: 90 ns
Memory Organization: 8M x 8, 4M x 16
DigiKey Programmable: Not Verified
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S29GL064N90FFIS10 S29GL064N90FFIS10 Infineon Technologies Description: IC FLASH 64MBIT PARALLEL 64FBGA
Packaging: Tray
Package / Case: 64-LBGA
Mounting Type: Surface Mount
Memory Size: 64Mbit
Memory Type: Non-Volatile
Operating Temperature: -40°C ~ 85°C (TA)
Voltage - Supply: 2.7V ~ 3.6V
Technology: FLASH - NOR
Memory Format: FLASH
Supplier Device Package: 64-FBGA (13x11)
Write Cycle Time - Word, Page: 90ns
Memory Interface: Parallel
Access Time: 90 ns
Memory Organization: 8M x 8, 4M x 16
DigiKey Programmable: Not Verified
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S29GL064N90FFA040 S29GL064N90FFA040 Infineon Technologies S29GL064N_032N_RevB_5-26-17.pdf Description: IC FLASH 64MBIT PARALLEL 64FBGA
Packaging: Tray
Package / Case: 64-LBGA
Mounting Type: Surface Mount
Memory Size: 64Mbit
Memory Type: Non-Volatile
Operating Temperature: -40°C ~ 85°C (TA)
Voltage - Supply: 2.7V ~ 3.6V
Technology: FLASH - NOR
Memory Format: FLASH
Supplier Device Package: 64-FBGA (13x11)
Grade: Automotive
Write Cycle Time - Word, Page: 90ns
Memory Interface: Parallel
Access Time: 90 ns
Memory Organization: 8M x 8, 4M x 16
DigiKey Programmable: Not Verified
Qualification: AEC-Q100
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DD380N22KXPSA1 DD380N22KXPSA1 Infineon Technologies Infineon-DD380N22K-DataSheet-v03_01-EN.pdf?fileId=8ac78c8c8d2fe47b018d5f08cc4e379e Description: DIODE MOD GP 2200V 393A BGPB50AT
Packaging: Bulk
Package / Case: Module
Mounting Type: Chassis Mount
Speed: Standard Recovery >500ns, > 200mA (Io)
Technology: Standard
Diode Configuration: 1 Pair Series Connection
Current - Average Rectified (Io) (per Diode): 393A
Supplier Device Package: BG-PB50AT-1
Operating Temperature - Junction: 150°C
Voltage - DC Reverse (Vr) (Max): 2200 V
Voltage - Forward (Vf) (Max) @ If: 1.16 V @ 800 A
Current - Reverse Leakage @ Vr: 25 mA @ 2200 V
на замовлення 3 шт:
термін постачання 21-31 дні (днів)
1+13879.09 грн
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DD380N22KOFXPSA1 DD380N22KOFXPSA1 Infineon Technologies Infineon-DD380N22K-DataSheet-v03_01-EN.pdf?fileId=8ac78c8c8d2fe47b018d5f08cc4e379e Description: DIODE MOD GP 2200V 393A BGPB50AT
Packaging: Bulk
Package / Case: Module
Mounting Type: Chassis Mount
Speed: Standard Recovery >500ns, > 200mA (Io)
Technology: Standard
Diode Configuration: 1 Pair Series Connection
Current - Average Rectified (Io) (per Diode): 393A
Supplier Device Package: BG-PB50AT-1
Operating Temperature - Junction: 150°C
Voltage - DC Reverse (Vr) (Max): 2200 V
Voltage - Forward (Vf) (Max) @ If: 1.16 V @ 800 A
Current - Reverse Leakage @ Vr: 25 mA @ 2200 V
на замовлення 5 шт:
термін постачання 21-31 дні (днів)
1+13879.09 грн
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DD360N22KHPSA1 DD360N22KHPSA1 Infineon Technologies Infineon-DD360N22K-DS-v03_02-en_de.pdf?fileId=5546d461464245d301465bd363e470f5 Description: BRIDGE RECT 1P 2.2KV 360A PB50AT
Packaging: Tray
Package / Case: Module
Mounting Type: Chassis Mount
Diode Type: Single Phase
Operating Temperature: 150°C (TJ)
Technology: Standard
Supplier Device Package: BG-PB50AT-1
Voltage - Peak Reverse (Max): 2.2 kV
Current - Average Rectified (Io): 360 A
Current - Reverse Leakage @ Vr: 25 mA @ 2200 V
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PSB2134HV2.2 PSB2134HV2.2 Infineon Technologies psb213x.pdf Description: SICOFI-TE FOUR CH CODEC FILTER
Packaging: Bulk
Package / Case: 64-QFP
Mounting Type: Surface Mount
Function: CODEC Filter
Interface: IOM-2 PCM, SPI
Voltage - Supply: 5V
Current - Supply: 26mA
Supplier Device Package: P-MQFP-64
Number of Circuits: 4
Power (Watts): 130 mW
на замовлення 5617 шт:
термін постачання 21-31 дні (днів)
33+643.72 грн
Мінімальне замовлення: 33
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PSB2134HV1.4GD PSB2134HV1.4GD Infineon Technologies Description: SICOFI-TE FOUR CH CODEC FILTER
Packaging: Bulk
на замовлення 850 шт:
термін постачання 21-31 дні (днів)
31+699.41 грн
Мінімальне замовлення: 31
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IPB65R225C7ATMA2 IPB65R225C7ATMA2 Infineon Technologies Infineon-IPB65R225C7-DS-v02_00-en.pdf?fileId=db3a30433e78ea82013e7921c0d800bc Description: MOSFET N-CH 650V 11A TO263-3
Packaging: Cut Tape (CT)
Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 11A (Tc)
Rds On (Max) @ Id, Vgs: 225mOhm @ 4.8A, 10V
Power Dissipation (Max): 63W (Tc)
Vgs(th) (Max) @ Id: 4V @ 240µA
Supplier Device Package: PG-TO263-3
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 650 V
Gate Charge (Qg) (Max) @ Vgs: 20 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 996 pF @ 400 V
на замовлення 868 шт:
термін постачання 21-31 дні (днів)
2+225.29 грн
10+141.43 грн
100+98.26 грн
500+74.86 грн
Мінімальне замовлення: 2
В кошику  од. на суму  грн.
IMT40R015M2HXTMA1 IMT40R015M2HXTMA1 Infineon Technologies Infineon-IMT40R015M2H-DataSheet-v02_00-EN.pdf?fileId=8ac78c8c8eeb092c018f84b72f374933 Description: SIC-MOS
Packaging: Tape & Reel (TR)
Package / Case: 8-PowerSFN
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: SiCFET (Silicon Carbide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 11.7A (Ta), 111A (Tc)
Rds On (Max) @ Id, Vgs: 19.1mOhm @ 27.1A, 18V
Power Dissipation (Max): 3.8W (Ta), 341W (Tc)
Vgs(th) (Max) @ Id: 5.6V @ 9.7mA
Supplier Device Package: PG-HSOF-8-2
Drive Voltage (Max Rds On, Min Rds On): 15V, 18V
Vgs (Max): +23V, -7V
Drain to Source Voltage (Vdss): 400 V
Gate Charge (Qg) (Max) @ Vgs: 62 nC @ 18 V
Input Capacitance (Ciss) (Max) @ Vds: 2730 pF @ 200 V
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IMT40R015M2HXTMA1 IMT40R015M2HXTMA1 Infineon Technologies Infineon-IMT40R015M2H-DataSheet-v02_00-EN.pdf?fileId=8ac78c8c8eeb092c018f84b72f374933 Description: SIC-MOS
Packaging: Cut Tape (CT)
Package / Case: 8-PowerSFN
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: SiCFET (Silicon Carbide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 11.7A (Ta), 111A (Tc)
Rds On (Max) @ Id, Vgs: 19.1mOhm @ 27.1A, 18V
Power Dissipation (Max): 3.8W (Ta), 341W (Tc)
Vgs(th) (Max) @ Id: 5.6V @ 9.7mA
Supplier Device Package: PG-HSOF-8-2
Drive Voltage (Max Rds On, Min Rds On): 15V, 18V
Vgs (Max): +23V, -7V
Drain to Source Voltage (Vdss): 400 V
Gate Charge (Qg) (Max) @ Vgs: 62 nC @ 18 V
Input Capacitance (Ciss) (Max) @ Vds: 2730 pF @ 200 V
на замовлення 1917 шт:
термін постачання 21-31 дні (днів)
1+1026.74 грн
10+693.76 грн
100+581.59 грн
500+502.50 грн
1000+488.61 грн
В кошику  од. на суму  грн.
IMBG40R015M2HXTMA1 IMBG40R015M2HXTMA1 Infineon Technologies Infineon-IMBG40R015M2H-DataSheet-v02_00-EN.pdf?fileId=8ac78c8c8eeb092c018f5801017032f3 Description: SIC-MOS
Packaging: Cut Tape (CT)
Package / Case: TO-263-8, D2PAK (7 Leads + Tab), TO-263CA
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: SiC (Silicon Carbide Junction Transistor)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 11.7A (Ta), 111A (Tc)
Rds On (Max) @ Id, Vgs: 19.1mOhm @ 27.1A, 18V
Power Dissipation (Max): 3.8W (Ta), 341W (Tc)
Vgs(th) (Max) @ Id: 5.6V @ 9.7mA
Supplier Device Package: PG-TO263-7-11
Drive Voltage (Max Rds On, Min Rds On): 15V, 18V
Vgs (Max): +23V, -7V
Drain to Source Voltage (Vdss): 400 V
Gate Charge (Qg) (Max) @ Vgs: 62 nC @ 18 V
Input Capacitance (Ciss) (Max) @ Vds: 2730 pF @ 200 V
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IMBG40R015M2HXTMA1 IMBG40R015M2HXTMA1 Infineon Technologies Infineon-IMBG40R015M2H-DataSheet-v02_00-EN.pdf?fileId=8ac78c8c8eeb092c018f5801017032f3 Description: SIC-MOS
Packaging: Tray
Package / Case: TO-263-8, D2PAK (7 Leads + Tab), TO-263CA
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: SiC (Silicon Carbide Junction Transistor)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 11.7A (Ta), 111A (Tc)
Rds On (Max) @ Id, Vgs: 19.1mOhm @ 27.1A, 18V
Power Dissipation (Max): 3.8W (Ta), 341W (Tc)
Vgs(th) (Max) @ Id: 5.6V @ 9.7mA
Supplier Device Package: PG-TO263-7-11
Drive Voltage (Max Rds On, Min Rds On): 15V, 18V
Vgs (Max): +23V, -7V
Drain to Source Voltage (Vdss): 400 V
Gate Charge (Qg) (Max) @ Vgs: 62 nC @ 18 V
Input Capacitance (Ciss) (Max) @ Vds: 2730 pF @ 200 V
на замовлення 1000 шт:
термін постачання 21-31 дні (днів)
1000+609.47 грн
Мінімальне замовлення: 1000
В кошику  од. на суму  грн.
IPB65R225C7ATMA1 IPB65R225C7ATMA1 Infineon Technologies DS_IPB65R225C7_2_0.pdf?folderId=db3a3043163797a6011637d4bae7003b&fileId=db3a30433e78ea82013e7921c0d800bc Description: MOSFET N-CH 650V 11A D2PAK
Packaging: Cut Tape (CT)
Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 11A (Tc)
Rds On (Max) @ Id, Vgs: 225mOhm @ 4.8A, 10V
Power Dissipation (Max): 63W (Tc)
Vgs(th) (Max) @ Id: 4V @ 240µA
Supplier Device Package: PG-TO263-3
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 650 V
Gate Charge (Qg) (Max) @ Vgs: 20 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 996 pF @ 400 V
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IDWD120E120D7XKSA1 IDWD120E120D7XKSA1 Infineon Technologies IDWD120E120D7_Rev1.00_12-15-23.pdf Description: DIODE GEN PURP 1200V 177A TO247
Packaging: Tube
Package / Case: TO-247-2
Mounting Type: Through Hole
Speed: Fast Recovery =< 500ns, > 5A (Io)
Reverse Recovery Time (trr): 215 ns
Technology: Standard
Current - Average Rectified (Io): 177A
Supplier Device Package: PG-TO247-2-2
Operating Temperature - Junction: -40°C ~ 175°C
Voltage - DC Reverse (Vr) (Max): 1200 V
Voltage - Forward (Vf) (Max) @ If: 3 V @ 120 A
Current - Reverse Leakage @ Vr: 20 µA @ 1200 V
на замовлення 184 шт:
термін постачання 21-31 дні (днів)
1+444.29 грн
10+386.57 грн
25+368.61 грн
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IPAW70R950CEXKSA1 IPAW70R950CEXKSA1 Infineon Technologies Infineon-IPAW70R950CE-DS-v02_00-EN.pdf?fileId=5546d462576f34750157d20d148c71ef Description: MOSFET N-CH 700V 7.4A TO220-3-31
Packaging: Bulk
Package / Case: TO-220-3 Full Pack
Mounting Type: Through Hole
Operating Temperature: -40°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 7.4A (Tc)
Rds On (Max) @ Id, Vgs: 950mOhm @ 1.5A, 10V
Power Dissipation (Max): 68W (Tc)
Vgs(th) (Max) @ Id: 3.5V @ 150µA
Supplier Device Package: PG-TO220-3-FP
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 700 V
Gate Charge (Qg) (Max) @ Vgs: 15.3 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 328 pF @ 100 V
на замовлення 10800 шт:
термін постачання 21-31 дні (днів)
483+43.71 грн
Мінімальне замовлення: 483
В кошику  од. на суму  грн.
CY91F527USDPMC-GSE2 Infineon Technologies Description: IC MCU 32BT 1.5625MB FLSH 176QFP
Packaging: Tray
Package / Case: 176-LQFP
Mounting Type: Surface Mount
Speed: 128MHz
Program Memory Size: 1.5625MB (1.5625M x 8)
RAM Size: 208K x 8
Operating Temperature: -40°C ~ 125°C (TA)
Oscillator Type: External, Internal
Program Memory Type: FLASH
EEPROM Size: 64K x 8
Core Processor: FR81S
Data Converters: A/D 48x12b SAR; D/A 2x8b
Core Size: 32-Bit
Voltage - Supply (Vcc/Vdd): 2.7V ~ 5.5V
Connectivity: CANbus, EBI/EMI, FlexRay, I2C, LINbus, UART/USART
Peripherals: DMA, LVD, PWM, WDT
Supplier Device Package: 176-LQFP (24x24)
Number of I/O: 115
DigiKey Programmable: Not Verified
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CY3201-06 CY3201-06 Infineon Technologies Description: MCU EMULATOR POD FOR 20-SSOP
Packaging: Bulk
For Use With/Related Products: CY8C26233
Accessory Type: Emulation Pod
на замовлення 4 шт:
термін постачання 21-31 дні (днів)
1+4891.16 грн
В кошику  од. на суму  грн.
CY3201-07 CY3201-07 Infineon Technologies Description: MCU EMULATOR POD FOR 28-SOIC
Packaging: Bulk
For Use With/Related Products: CY8C26443
Accessory Type: Emulation Pod
на замовлення 3 шт:
термін постачання 21-31 дні (днів)
1+4494.75 грн
В кошику  од. на суму  грн.
CY3207ISSP CY3207ISSP Infineon Technologies Infineon-CY3207-ISSP_Kit_Quick_Start_Guide-UserManual-v01_00-EN.pdf?fileId=8ac78c8c7d0d8da4017d0eef6ede7f43&utm_source=cypress&utm_medium=referral&utm_campaign=202110_globe_en_all_integration-files Description: PSOC USB IN-SYSTEM PROGRAMMER
Packaging: Bulk
For Use With/Related Products: PSoC Mixed Signal Arrays
Type: Programmer
Contents: Board(s), Cable(s), Power Supply
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CY3203A-CAPSENSE CY3203A-CAPSENSE Infineon Technologies CY3203A-CapSense%20Kit%20Quick%20Start.pdf Description: KIT EVAL CAPSENSE CSA
Packaging: Bulk
Interface: LCD
Voltage - Supply: 5V, USB
Sensor Type: Touch, Capacitive
Utilized IC / Part: CY8C20x34
Supplied Contents: Board(s), Cable(s), Accessories
Embedded: Yes, MCU, 8-Bit
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TLE94108ELXUMA1 TLE94108ELXUMA1 Infineon Technologies Infineon-TLE94108EL-DS-v01_00-EN.pdf?fileId=5546d462576f347501579a157dc07d16 Description: IC HALF BRIDGE DRVR 500MA 24SSOP
Packaging: Bulk
Package / Case: 24-LSSOP (0.154", 3.90mm Width) Exposed Pad
Mounting Type: Surface Mount
Interface: SPI
Operating Temperature: -40°C ~ 150°C (TJ)
Output Configuration: Half Bridge (8)
Voltage - Supply: 3V ~ 5.5V
Rds On (Typ): 850mOhm LS, 850mOhm HS
Applications: AC Motors, DC Motors, General Purpose
Current - Output / Channel: 500mA
Current - Peak Output: 2A
Technology: Power MOSFET
Voltage - Load: 5.5V ~ 20V
Supplier Device Package: PG-SSOP-24-4
Fault Protection: Over Temperature, Short Circuit, UVLO
Load Type: Inductive
на замовлення 8914 шт:
термін постачання 21-31 дні (днів)
179+126.24 грн
Мінімальне замовлення: 179
В кошику  од. на суму  грн.
TLE7233EMXUMA1 Infineon Technologies fundamentals-of-power-semiconductors Description: IC PWR DRIVER N-CHAN 1:4 24-SSOP
Packaging: Tape & Reel (TR)
Package / Case: 24-LSSOP (0.154", 3.90mm Width) Exposed Pad
Output Type: N-Channel
Mounting Type: Surface Mount
Number of Outputs: 4
Interface: SPI
Switch Type: General Purpose
Operating Temperature: -40°C ~ 150°C (TJ)
Output Configuration: Low Side
Rds On (Typ): 1Ohm
Voltage - Load: 4.5V ~ 5.5V
Voltage - Supply (Vcc/Vdd): 3V ~ 5.5V
Current - Output (Max): 470mA
Ratio - Input:Output: 1:4
Supplier Device Package: PG-SSOP-24-4
Fault Protection: Open Load Detect, Over Temperature
Grade: Automotive
Qualification: AEC-Q100
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DZ540N26KHPSA1 DZ540N26KHPSA1 Infineon Technologies DZ540N.pdf Description: DIODE GEN PURP 2.6KV 732A MODULE
Packaging: Tray
Package / Case: Module
Mounting Type: Chassis Mount
Speed: Standard Recovery >500ns, > 200mA (Io)
Technology: Standard
Current - Average Rectified (Io): 732A
Supplier Device Package: Module
Operating Temperature - Junction: -40°C ~ 150°C
Voltage - DC Reverse (Vr) (Max): 2600 V
Voltage - Forward (Vf) (Max) @ If: 1.64 V @ 2200 A
Current - Reverse Leakage @ Vr: 40 mA @ 2600 V
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T740N26TOFPRXOSA1 Infineon Technologies Description: DIODE BG-T5814K0-1
Packaging: Tray
Package / Case: TO-200AB, A-PUK
Mounting Type: Clamp On
Operating Temperature: -40°C ~ 125°C
Structure: Single
Current - Hold (Ih) (Max): 300 mA
Current - Gate Trigger (Igt) (Max): 250 mA
Current - Non Rep. Surge 50, 60Hz (Itsm): 13000A @ 50Hz
Number of SCRs, Diodes: 1 SCR
Current - On State (It (AV)) (Max): 745 A
Voltage - Gate Trigger (Vgt) (Max): 2.2 V
Current - On State (It (RMS)) (Max): 1500 A
Voltage - Off State: 2.6 kV
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ISZ173N15NM6ATMA1 ISZ173N15NM6ATMA1 Infineon Technologies Infineon-ISZ173N15NM6-DataSheet-v02_00-EN.pdf?fileId=8ac78c8c90530b3a019077406e337014 Description: TRENCH >=100V
Packaging: Tape & Reel (TR)
Package / Case: 8-PowerTDFN
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 7.9A (Ta), 48A (Tc)
Rds On (Max) @ Id, Vgs: 16.3mOhm @ 16A, 15V
Power Dissipation (Max): 2.5W (Ta), 94W (Tc)
Vgs(th) (Max) @ Id: 4V @ 35µA
Supplier Device Package: PG-TSDSON-8 FL
Drive Voltage (Max Rds On, Min Rds On): 8V, 15V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 150 V
Gate Charge (Qg) (Max) @ Vgs: 19.2 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 1300 pF @ 75 V
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ISZ173N15NM6ATMA1 ISZ173N15NM6ATMA1 Infineon Technologies Infineon-ISZ173N15NM6-DataSheet-v02_00-EN.pdf?fileId=8ac78c8c90530b3a019077406e337014 Description: TRENCH >=100V
Packaging: Cut Tape (CT)
Package / Case: 8-PowerTDFN
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 7.9A (Ta), 48A (Tc)
Rds On (Max) @ Id, Vgs: 16.3mOhm @ 16A, 15V
Power Dissipation (Max): 2.5W (Ta), 94W (Tc)
Vgs(th) (Max) @ Id: 4V @ 35µA
Supplier Device Package: PG-TSDSON-8 FL
Drive Voltage (Max Rds On, Min Rds On): 8V, 15V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 150 V
Gate Charge (Qg) (Max) @ Vgs: 19.2 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 1300 pF @ 75 V
на замовлення 4906 шт:
термін постачання 21-31 дні (днів)
2+184.47 грн
10+132.28 грн
100+101.12 грн
500+77.02 грн
1000+75.08 грн
Мінімальне замовлення: 2
В кошику  од. на суму  грн.
IPQC60R010S7AXTMA1 IPQC60R010S7AXTMA1 Infineon Technologies Infineon-IPQC60R010S7A-DataSheet-v02_00-EN.pdf?fileId=8ac78c8c850f4bee0185150c5c7a6cf0 Description: MOSFET
Packaging: Tape & Reel (TR)
Package / Case: 22-PowerBSOP Module
Mounting Type: Surface Mount
Operating Temperature: -40°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 50A (Tc)
Rds On (Max) @ Id, Vgs: 10mOhm @ 50A, 12V
Power Dissipation (Max): 694W (Tc)
Vgs(th) (Max) @ Id: 4.5V @ 3.08mA
Supplier Device Package: PG-HDSOP-22
Grade: Automotive
Drive Voltage (Max Rds On, Min Rds On): 12V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 600 V
Gate Charge (Qg) (Max) @ Vgs: 318 nC @ 12 V
Qualification: AEC-Q101
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IPQC60R010S7AXTMA1 IPQC60R010S7AXTMA1 Infineon Technologies Infineon-IPQC60R010S7A-DataSheet-v02_00-EN.pdf?fileId=8ac78c8c850f4bee0185150c5c7a6cf0 Description: MOSFET
Packaging: Cut Tape (CT)
Package / Case: 22-PowerBSOP Module
Mounting Type: Surface Mount
Operating Temperature: -40°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 50A (Tc)
Rds On (Max) @ Id, Vgs: 10mOhm @ 50A, 12V
Power Dissipation (Max): 694W (Tc)
Vgs(th) (Max) @ Id: 4.5V @ 3.08mA
Supplier Device Package: PG-HDSOP-22
Grade: Automotive
Drive Voltage (Max Rds On, Min Rds On): 12V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 600 V
Gate Charge (Qg) (Max) @ Vgs: 318 nC @ 12 V
Qualification: AEC-Q101
на замовлення 660 шт:
термін постачання 21-31 дні (днів)
1+1420.80 грн
10+1021.60 грн
100+937.85 грн
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CY29942AXCT CY29942AXCT Infineon Technologies Infineon-CY29942AXC-DataSheet-v13_00-EN.pdf?fileId=8ac78c8c7d0d8da4017d0ebd015d2ef5&utm_source=cypress&utm_medium=referral&utm_campaign=202110_globe_en_all_integration-files Description: IC CLK BUFFER 1:18 200MHZ 32TQFP
Packaging: Bulk
Package / Case: 32-LQFP
Number of Circuits: 1
Mounting Type: Surface Mount
Output: LVCMOS, LVTTL
Type: Fanout Buffer (Distribution)
Input: LVCMOS, LVTTL
Operating Temperature: 0°C ~ 70°C
Voltage - Supply: 2.375V ~ 3.465V
Ratio - Input:Output: 1:18
Differential - Input:Output: No/No
Supplier Device Package: 32-TQFP (7x7)
Frequency - Max: 200 MHz
на замовлення 4000 шт:
термін постачання 21-31 дні (днів)
19+1123.87 грн
Мінімальне замовлення: 19
В кошику  од. на суму  грн.
CY29942AXI CY29942AXI Infineon Technologies Infineon-CY29942AXC-DataSheet-v13_00-EN.pdf?fileId=8ac78c8c7d0d8da4017d0ebd015d2ef5&utm_source=cypress&utm_medium=referral&utm_campaign=202110_globe_en_all_integration-files Description: IC CLK BUFFER 1:18 200MHZ 32TQFP
Packaging: Tray
Package / Case: 32-LQFP
Number of Circuits: 1
Mounting Type: Surface Mount
Output: LVCMOS, LVTTL
Type: Fanout Buffer (Distribution)
Input: LVCMOS, LVTTL
Operating Temperature: -40°C ~ 85°C
Voltage - Supply: 2.375V ~ 3.465V
Ratio - Input:Output: 1:18
Differential - Input:Output: No/No
Supplier Device Package: 32-TQFP (7x7)
Frequency - Max: 200 MHz
на замовлення 554 шт:
термін постачання 21-31 дні (днів)
12+1850.11 грн
Мінімальне замовлення: 12
В кошику  од. на суму  грн.
CY29942AXI CY29942AXI Infineon Technologies Infineon-CY29942AXC-DataSheet-v13_00-EN.pdf?fileId=8ac78c8c7d0d8da4017d0ebd015d2ef5&utm_source=cypress&utm_medium=referral&utm_campaign=202110_globe_en_all_integration-files Description: IC CLK BUFFER 1:18 200MHZ 32TQFP
Packaging: Tray
Package / Case: 32-LQFP
Number of Circuits: 1
Mounting Type: Surface Mount
Output: LVCMOS, LVTTL
Type: Fanout Buffer (Distribution)
Input: LVCMOS, LVTTL
Operating Temperature: -40°C ~ 85°C
Voltage - Supply: 2.375V ~ 3.465V
Ratio - Input:Output: 1:18
Differential - Input:Output: No/No
Supplier Device Package: 32-TQFP (7x7)
Frequency - Max: 200 MHz
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TLE5046MTICPW2100HALA1 TLE5046MTICPW2100HALA1 Infineon Technologies Description: SPEED & CURRENT SENSORS
Packaging: Tape & Box (TB)
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DD600N18KXPSA1 DD600N18KXPSA1 Infineon Technologies Infineon-DD600N-DS-v03_02-EN.pdf?fileId=db3a304412b407950112b42fbcc44d54 Description: DIODE MODULE GP 1800V BGPB60E2A1
Packaging: Tray
Package / Case: Module
Mounting Type: Chassis Mount
Speed: Standard Recovery >500ns, > 200mA (Io)
Technology: Standard
Diode Configuration: 1 Pair Series Connection
Current - Average Rectified (Io) (per Diode): 600A
Supplier Device Package: BG-PB60E2A-1
Operating Temperature - Junction: 150°C
Voltage - DC Reverse (Vr) (Max): 1800 V
Voltage - Forward (Vf) (Max) @ If: 1.32 V @ 1.8 kA
Current - Reverse Leakage @ Vr: 40 mA @ 1800 V
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IRAM136-1060A IRAM136-1060A Infineon Technologies IRAM136-1060A.pdf Description: IC MOD PWR HYBRID 600V 10A MOTOR
Packaging: Tube
Package / Case: 29-PowerSSIP Module, 21 Leads, Formed Leads
Mounting Type: Through Hole
Type: IGBT
Configuration: 3 Phase
Voltage - Isolation: 2000Vrms
Current: 10 A
Voltage: 600 V
на замовлення 99 шт:
термін постачання 21-31 дні (днів)
22+1033.95 грн
Мінімальне замовлення: 22
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IRAM136-1060A IRAM136-1060A Infineon Technologies IRAM136-1060A.pdf Description: IC MOD PWR HYBRID 600V 10A MOTOR
Packaging: Tube
Package / Case: 29-PowerSSIP Module, 21 Leads, Formed Leads
Mounting Type: Through Hole
Type: IGBT
Configuration: 3 Phase
Voltage - Isolation: 2000Vrms
Current: 10 A
Voltage: 600 V
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IRLU3636PBF IRSDS10828-1.pdf?t.download=true&u=5oefqw
IRLU3636PBF
Виробник: Infineon Technologies
Description: MOSFET N-CH 60V 50A IPAK
Packaging: Tube
Package / Case: TO-251-3 Short Leads, IPak, TO-251AA
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 50A (Tc)
Rds On (Max) @ Id, Vgs: 6.8mOhm @ 50A, 10V
Power Dissipation (Max): 143W (Tc)
Vgs(th) (Max) @ Id: 2.5V @ 100µA
Supplier Device Package: IPAK
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±16V
Drain to Source Voltage (Vdss): 60 V
Gate Charge (Qg) (Max) @ Vgs: 49 nC @ 4.5 V
Input Capacitance (Ciss) (Max) @ Vds: 3779 pF @ 50 V
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CY62177GE30-55ZXIT Infineon-CY62177G30_CY62177GE30_MoBL_32-Mbit_(2M_words_16-bit_4M_words_8-bit)_Static_RAM_with_Error-Correcting_Code_(ECC)-DataSheet-v04_00-EN.pdf?fileId=8ac78c8c7d0d8da4017d0ee97f1d725c
CY62177GE30-55ZXIT
Виробник: Infineon Technologies
Description: IC SRAM 32MBIT PARALLEL 48TSOP I
Packaging: Tape & Reel (TR)
Package / Case: 48-TFSOP (0.724", 18.40mm Width)
Mounting Type: Surface Mount
Memory Size: 32Mbit
Memory Type: Volatile
Operating Temperature: -40°C ~ 85°C (TA)
Voltage - Supply: 2.2V ~ 3.6V
Technology: SRAM - Asynchronous
Memory Format: SRAM
Supplier Device Package: 48-TSOP I
Write Cycle Time - Word, Page: 55ns
Memory Interface: Parallel
Access Time: 55 ns
Memory Organization: 2M x 16
DigiKey Programmable: Not Verified
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CY62177GE30-55ZXI Infineon-CY62177G30_CY62177GE30_MoBL_32-Mbit_(2M_words_16-bit_4M_words_8-bit)_Static_RAM_with_Error-Correcting_Code_(ECC)-DataSheet-v04_00-EN.pdf?fileId=8ac78c8c7d0d8da4017d0ee97f1d725c
CY62177GE30-55ZXI
Виробник: Infineon Technologies
Description: IC SRAM 32MBIT PARALLEL 48TSOP I
Packaging: Tray
Package / Case: 48-TFSOP (0.724", 18.40mm Width)
Mounting Type: Surface Mount
Memory Size: 32Mbit
Memory Type: Volatile
Operating Temperature: -40°C ~ 85°C (TA)
Voltage - Supply: 2.2V ~ 3.6V
Technology: SRAM - Asynchronous
Memory Format: SRAM
Supplier Device Package: 48-TSOP I
Write Cycle Time - Word, Page: 55ns
Memory Interface: Parallel
Access Time: 55 ns
Memory Organization: 2M x 16
DigiKey Programmable: Not Verified
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CY7C1382D-200AXC
CY7C1382D-200AXC
Виробник: Infineon Technologies
Description: IC SRAM 18MBIT PARALLEL 100TQFP
Packaging: Tray
Package / Case: 100-LQFP
Mounting Type: Surface Mount
Memory Size: 18Mbit
Memory Type: Volatile
Operating Temperature: 0°C ~ 70°C (TA)
Voltage - Supply: 3.135V ~ 3.6V
Technology: SRAM - Synchronous, SDR
Clock Frequency: 200 MHz
Memory Format: SRAM
Supplier Device Package: 100-TQFP (14x20)
Memory Interface: Parallel
Access Time: 3 ns
Memory Organization: 1M x 18
DigiKey Programmable: Not Verified
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CY7C1370D-200BGXC CY7C1370%2C72D.pdf
CY7C1370D-200BGXC
Виробник: Infineon Technologies
Description: IC SRAM 18MBIT PARALLEL 119PBGA
Packaging: Tray
Package / Case: 119-BGA
Mounting Type: Surface Mount
Memory Size: 18Mbit
Memory Type: Volatile
Operating Temperature: 0°C ~ 70°C (TA)
Voltage - Supply: 3.135V ~ 3.6V
Technology: SRAM - Synchronous, SDR
Clock Frequency: 200 MHz
Memory Format: SRAM
Supplier Device Package: 119-PBGA (14x22)
Memory Interface: Parallel
Access Time: 3 ns
Memory Organization: 512K x 36
DigiKey Programmable: Not Verified
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CY7C1370D-200AXC
CY7C1370D-200AXC
Виробник: Infineon Technologies
Description: IC SRAM 18MBIT PARALLEL 100TQFP
Packaging: Tray
Package / Case: 100-LQFP
Mounting Type: Surface Mount
Memory Size: 18Mbit
Memory Type: Volatile
Operating Temperature: 0°C ~ 70°C (TA)
Voltage - Supply: 3.135V ~ 3.6V
Technology: SRAM - Synchronous, SDR
Clock Frequency: 200 MHz
Memory Format: SRAM
Supplier Device Package: 100-TQFP (14x20)
Memory Interface: Parallel
Access Time: 3 ns
Memory Organization: 512K x 36
DigiKey Programmable: Not Verified
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FD200R12KE3PHOSA1 Infineon-FD200R12KE3P-DS-v02_00-EN.pdf?fileId=5546d46253e9fadc0153efbccd9b3c14
FD200R12KE3PHOSA1
Виробник: Infineon Technologies
Description: IGBT MODULE 1200V 200A
Packaging: Tray
Package / Case: Module
Mounting Type: Chassis Mount
Input: Standard
Configuration: Single
Operating Temperature: -40°C ~ 125°C
Vce(on) (Max) @ Vge, Ic: 2.15V @ 15V, 200A
NTC Thermistor: No
Supplier Device Package: Module
IGBT Type: Trench Field Stop
Current - Collector (Ic) (Max): 200 A
Voltage - Collector Emitter Breakdown (Max): 1200 V
Current - Collector Cutoff (Max): 5 mA
Input Capacitance (Cies) @ Vce: 14 nF @ 25 V
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D2000U65X122XPSA1
D2000U65X122XPSA1
Виробник: Infineon Technologies
Description: HIGH POWER THYR / DIO
Packaging: Tray
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BGT24ATR22E6433XUMA1
BGT24ATR22E6433XUMA1
Виробник: Infineon Technologies
Description: BGT24ATR22E6433XUMA1
Packaging: Tape & Reel (TR)
Package / Case: 32-PowerVFQFN
Mounting Type: Surface Mount
Function: VCO
Frequency: 24GHz ~ 24.25GHz
RF Type: Radar
Secondary Attributes: ADC
Supplier Device Package: PG-VQFN-32-9
Grade: Automotive
Qualification: AEC-Q100
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BGT24ATR22E6433XUMA1
BGT24ATR22E6433XUMA1
Виробник: Infineon Technologies
Description: BGT24ATR22E6433XUMA1
Packaging: Cut Tape (CT)
Package / Case: 32-PowerVFQFN
Mounting Type: Surface Mount
Function: VCO
Frequency: 24GHz ~ 24.25GHz
RF Type: Radar
Secondary Attributes: ADC
Supplier Device Package: PG-VQFN-32-9
Grade: Automotive
Qualification: AEC-Q100
на замовлення 296 шт:
термін постачання 21-31 дні (днів)
Кількість Ціна
1+903.50 грн
10+660.73 грн
25+608.29 грн
100+516.75 грн
250+490.95 грн
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TLE9274QXV33XUMA2 Infineon-TLE9274QX%20V33-DataSheet-v02_00-EN.pdf?fileId=5546d4627762291e01776d6101847b85
TLE9274QXV33XUMA2
Виробник: Infineon Technologies
Description: OPTIREG SYST BASIS CHIPS
Packaging: Tape & Reel (TR)
Package / Case: 48-VFQFN Exposed Pad
Mounting Type: Surface Mount
Number of Outputs: 3
Voltage - Input: 4.5V ~ 28V
Operating Temperature: -40°C ~ 150°C (TJ)
Applications: Converter, Automotive
Supplier Device Package: PG-VQFN-48-31
Grade: Automotive
Qualification: AEC-Q100
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CY241V8ASXC-12 CY241V08A-12.pdf
CY241V8ASXC-12
Виробник: Infineon Technologies
Description: IC CLOCK GENERATOR 8SOIC
Packaging: Tube
Package / Case: 8-SOIC (0.154", 3.90mm Width)
Mounting Type: Surface Mount
Output: Clock
Frequency - Max: 74.25MHz
Type: Clock Generator, Fanout Distribution
Input: Clock
Operating Temperature: 0°C ~ 70°C
Voltage - Supply: 3.135V ~ 3.465V
Ratio - Input:Output: 1:2
Differential - Input:Output: No/No
Supplier Device Package: 8-SOIC
PLL: Yes with Bypass
Divider/Multiplier: Yes/No
Number of Circuits: 1
DigiKey Programmable: Not Verified
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EVALCO25VMINIBOARDTOBO1 Infineon-User_manual_EVAL_CO2_5V_MINIBOARD-UserManual-v01_02-EN.pdf?fileId=8ac78c8c8d2fe47b018df40eb06f7004
EVALCO25VMINIBOARDTOBO1
Виробник: Infineon Technologies
Description: EVAL BOARD
Packaging: Box
Sensitivity: ±3%
Interface: I2C, PWM, UART
Voltage - Supply: 3.3V
Sensor Type: Carbon Dioxide (CO2)
Utilized IC / Part: PAS CO2
Supplied Contents: Board(s)
Embedded: Yes, MCU
Contents: Board(s)
на замовлення 69 шт:
термін постачання 21-31 дні (днів)
Кількість Ціна
1+1439.64 грн
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EVALCO25VSENSOR2GOTOBO1 Infineon-Quickstart_guide_PAS_CO2_Sensor2Go_eval-UserManual-v01_03-EN.pdf?fileId=8ac78c8c8d2fe47b018ded80a4b76bcf
EVALCO25VSENSOR2GOTOBO1
Виробник: Infineon Technologies
Description: EVAL BOARD
Packaging: Box
Sensitivity: ±3%
Interface: I2C, PWM, UART
Voltage - Supply: 3.3V
Sensor Type: Carbon Dioxide (CO2)
Utilized IC / Part: PAS CO2
Supplied Contents: Board(s)
Embedded: Yes, MCU
Contents: Board(s)
на замовлення 13 шт:
термін постачання 21-31 дні (днів)
Кількість Ціна
1+2456.96 грн
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PASCO2V15AUMA1 Infineon-XENSIV_PAS_CO2_5V_Sensor-ProductBrief-v01_00-EN.pdf?fileId=8ac78c8c8d2fe47b018e2da2d3ab413c
PASCO2V15AUMA1
Виробник: Infineon Technologies
Description: PASCO2V15AUMA1
Packaging: Tape & Reel (TR)
Output: I2C, PWM, UART
Type: Carbon Dioxide (CO2)
Accuracy: ±5%
Operating Temperature: 0°C ~ 50°C
Voltage - Supply: 4.45V ~ 5.5V
Oxygen Range: 0 mbar ~ 800 bar
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PASCO2V15AUMA1 Infineon-XENSIV_PAS_CO2_5V_Sensor-ProductBrief-v01_00-EN.pdf?fileId=8ac78c8c8d2fe47b018e2da2d3ab413c
PASCO2V15AUMA1
Виробник: Infineon Technologies
Description: PASCO2V15AUMA1
Packaging: Cut Tape (CT)
Output: I2C, PWM, UART
Type: Carbon Dioxide (CO2)
Accuracy: ±5%
Operating Temperature: 0°C ~ 50°C
Voltage - Supply: 4.45V ~ 5.5V
Oxygen Range: 0 mbar ~ 800 bar
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PASCO2V01AUMA3 Infineon-PASCO2V01-DataSheet-v01_70-EN.pdf?fileId=8ac78c8c80027ecd01809278f1af1ba2
PASCO2V01AUMA3
Виробник: Infineon Technologies
Description: SENSOR CARBON DIOXIDE I2C OUTPUT
Packaging: Tape & Reel (TR)
Output: I2C, PWM, UART
Type: Carbon Dioxide (CO2)
Accuracy: ±3%
Operating Temperature: 0°C ~ 50°C
Voltage - Supply: 10.8V ~ 13.2V
Oxygen Range: 0 mbar ~ 800 bar
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PASCO2V11AUMA1
Виробник: Infineon Technologies
Description: SENSOR ENVIRONMENTAL
Packaging: Tape & Reel (TR)
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PASCO2V01AUMA2
PASCO2V01AUMA2
Виробник: Infineon Technologies
Description: SENSOR CARBON DIOXIDE I2C OUTPUT
Packaging: Tape & Reel (TR)
Output: I2C, PWM, UART
Type: Carbon Dioxide (CO2)
Operating Temperature: 0°C ~ 50°C (TA)
Voltage - Supply: 3V ~ 3.6V, 10.8V ~ 13.2V
Current - Supply: 800µA, 6.1mA
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4DIR1420HAXUMA1 Infineon-Datasheet_ISOFACE(TM)_4DIRx4xxHA_family-DataSheet-v01_00-EN.pdf?fileId=8ac78c8c8929aa4d01899cd5eb0a5610
4DIR1420HAXUMA1
Виробник: Infineon Technologies
Description: DIGITAL ISOLATORS
Packaging: Tape & Reel (TR)
Package / Case: 16-SOIC (0.295", 7.50mm Width)
Mounting Type: Surface Mount
Type: SPI
Operating Temperature: -40°C ~ 125°C
Voltage - Supply: 2.7V ~ 6.5V
Data Rate: 40Mbps
Technology: Magnetic Coupling
Voltage - Isolation: 5700Vrms
Inputs - Side 1/Side 2: 3/1
Supplier Device Package: PG-DSO-16-46
Rise / Fall Time (Typ): 4ns, 4ns (Max)
Common Mode Transient Immunity (Min): 100kV/µs
Propagation Delay tpLH / tpHL (Max): 33ns, 33ns
Isolated Power: Yes
Channel Type: Unidirectional
Pulse Width Distortion (Max): 3ns
Grade: Automotive
Number of Channels: 4
Qualification: AEC-Q100
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4DIR1420HAXUMA1 Infineon-Datasheet_ISOFACE(TM)_4DIRx4xxHA_family-DataSheet-v01_00-EN.pdf?fileId=8ac78c8c8929aa4d01899cd5eb0a5610
4DIR1420HAXUMA1
Виробник: Infineon Technologies
Description: DIGITAL ISOLATORS
Packaging: Cut Tape (CT)
Package / Case: 16-SOIC (0.295", 7.50mm Width)
Mounting Type: Surface Mount
Type: SPI
Operating Temperature: -40°C ~ 125°C
Voltage - Supply: 2.7V ~ 6.5V
Data Rate: 40Mbps
Technology: Magnetic Coupling
Voltage - Isolation: 5700Vrms
Inputs - Side 1/Side 2: 3/1
Supplier Device Package: PG-DSO-16-46
Rise / Fall Time (Typ): 4ns, 4ns (Max)
Common Mode Transient Immunity (Min): 100kV/µs
Propagation Delay tpLH / tpHL (Max): 33ns, 33ns
Isolated Power: Yes
Channel Type: Unidirectional
Pulse Width Distortion (Max): 3ns
Grade: Automotive
Number of Channels: 4
Qualification: AEC-Q100
на замовлення 1486 шт:
термін постачання 21-31 дні (днів)
Кількість Ціна
2+193.89 грн
10+124.65 грн
100+95.91 грн
500+81.36 грн
Мінімальне замовлення: 2
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PEB22320NV2.1
Виробник: Infineon Technologies
Description: CLOCK GENERATOR
Packaging: Bulk
DigiKey Programmable: Not Verified
на замовлення 415 шт:
термін постачання 21-31 дні (днів)
Кількість Ціна
16+1398.13 грн
Мінімальне замовлення: 16
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CY4603 Infineon-CY4603_HX3_USB_3.0_Hub_Development_Kit_(DVK)_Quick_Start_Guide-UserManual-v01_00-EN.pdf?fileId=8ac78c8c7d0d8da4017d0ef8e51d0e82&utm_source=cypress&utm_medium=referral&utm_campaign=202110_globe_en_all_integration-file
CY4603
Виробник: Infineon Technologies
Description: EVAL BOARD HX3 USB HUB CYUSB3314
Packaging: Box
Function: USB 3.0 Hub
Type: Interface
Contents: Board(s), Cable(s), Power Supply
Utilized IC / Part: CYUSB3314
Primary Attributes: 4-Channel (Quad)
Secondary Attributes: I2C Interface(s)
на замовлення 10 шт:
термін постачання 21-31 дні (днів)
Кількість Ціна
1+7077.31 грн
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BGSX24MU16E6327XTSA1
Виробник: Infineon Technologies
Description: IC RF SWITCH DP4T 5GHZ ULGA16-1
Features: DC Blocked
Packaging: Tape & Reel (TR)
Package / Case: 16-UFLGA Exposed Pad
Mounting Type: Surface Mount
Circuit: DP4T
RF Type: GSM, LTE, WCDMA
Operating Temperature: -40°C ~ 85°C
Voltage - Supply: 1.65V ~ 3.4V
Insertion Loss: 1dB
Frequency Range: 100MHz ~ 5GHz
Topology: Reflective
Test Frequency: 5GHz
Isolation: 34dB
Supplier Device Package: PG-ULGA-16-1
IIP3: 77dBm
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S29GL064N90FAI040 Infineon-S29GL064N_S29GL032N_64_Mbit_32_Mbit_3_V_Page_Mode_MirrorBit_Flash-DataSheet-v03_00-EN.pdf?fileId=8ac78c8c7d0d8da4017d0ed556fd548b&utm_source=cypress&utm_medium=referral&utm_campaign=202110_globe_en_all_integration-fi
S29GL064N90FAI040
Виробник: Infineon Technologies
Description: IC FLASH 64MBIT PARALLEL 64FBGA
Packaging: Tray
Package / Case: 64-LBGA
Mounting Type: Surface Mount
Memory Size: 64Mbit
Memory Type: Non-Volatile
Operating Temperature: -40°C ~ 85°C (TA)
Voltage - Supply: 2.7V ~ 3.6V
Technology: FLASH - NOR
Memory Format: FLASH
Supplier Device Package: 64-FBGA (13x11)
Write Cycle Time - Word, Page: 90ns
Memory Interface: Parallel
Access Time: 90 ns
Memory Organization: 8M x 8, 4M x 16
DigiKey Programmable: Not Verified
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S29GL064N90FFIS10
S29GL064N90FFIS10
Виробник: Infineon Technologies
Description: IC FLASH 64MBIT PARALLEL 64FBGA
Packaging: Tray
Package / Case: 64-LBGA
Mounting Type: Surface Mount
Memory Size: 64Mbit
Memory Type: Non-Volatile
Operating Temperature: -40°C ~ 85°C (TA)
Voltage - Supply: 2.7V ~ 3.6V
Technology: FLASH - NOR
Memory Format: FLASH
Supplier Device Package: 64-FBGA (13x11)
Write Cycle Time - Word, Page: 90ns
Memory Interface: Parallel
Access Time: 90 ns
Memory Organization: 8M x 8, 4M x 16
DigiKey Programmable: Not Verified
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S29GL064N90FFA040 S29GL064N_032N_RevB_5-26-17.pdf
S29GL064N90FFA040
Виробник: Infineon Technologies
Description: IC FLASH 64MBIT PARALLEL 64FBGA
Packaging: Tray
Package / Case: 64-LBGA
Mounting Type: Surface Mount
Memory Size: 64Mbit
Memory Type: Non-Volatile
Operating Temperature: -40°C ~ 85°C (TA)
Voltage - Supply: 2.7V ~ 3.6V
Technology: FLASH - NOR
Memory Format: FLASH
Supplier Device Package: 64-FBGA (13x11)
Grade: Automotive
Write Cycle Time - Word, Page: 90ns
Memory Interface: Parallel
Access Time: 90 ns
Memory Organization: 8M x 8, 4M x 16
DigiKey Programmable: Not Verified
Qualification: AEC-Q100
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DD380N22KXPSA1 Infineon-DD380N22K-DataSheet-v03_01-EN.pdf?fileId=8ac78c8c8d2fe47b018d5f08cc4e379e
DD380N22KXPSA1
Виробник: Infineon Technologies
Description: DIODE MOD GP 2200V 393A BGPB50AT
Packaging: Bulk
Package / Case: Module
Mounting Type: Chassis Mount
Speed: Standard Recovery >500ns, > 200mA (Io)
Technology: Standard
Diode Configuration: 1 Pair Series Connection
Current - Average Rectified (Io) (per Diode): 393A
Supplier Device Package: BG-PB50AT-1
Operating Temperature - Junction: 150°C
Voltage - DC Reverse (Vr) (Max): 2200 V
Voltage - Forward (Vf) (Max) @ If: 1.16 V @ 800 A
Current - Reverse Leakage @ Vr: 25 mA @ 2200 V
на замовлення 3 шт:
термін постачання 21-31 дні (днів)
Кількість Ціна
1+13879.09 грн
В кошику  од. на суму  грн.
DD380N22KOFXPSA1 Infineon-DD380N22K-DataSheet-v03_01-EN.pdf?fileId=8ac78c8c8d2fe47b018d5f08cc4e379e
DD380N22KOFXPSA1
Виробник: Infineon Technologies
Description: DIODE MOD GP 2200V 393A BGPB50AT
Packaging: Bulk
Package / Case: Module
Mounting Type: Chassis Mount
Speed: Standard Recovery >500ns, > 200mA (Io)
Technology: Standard
Diode Configuration: 1 Pair Series Connection
Current - Average Rectified (Io) (per Diode): 393A
Supplier Device Package: BG-PB50AT-1
Operating Temperature - Junction: 150°C
Voltage - DC Reverse (Vr) (Max): 2200 V
Voltage - Forward (Vf) (Max) @ If: 1.16 V @ 800 A
Current - Reverse Leakage @ Vr: 25 mA @ 2200 V
на замовлення 5 шт:
термін постачання 21-31 дні (днів)
Кількість Ціна
1+13879.09 грн
В кошику  од. на суму  грн.
DD360N22KHPSA1 Infineon-DD360N22K-DS-v03_02-en_de.pdf?fileId=5546d461464245d301465bd363e470f5
DD360N22KHPSA1
Виробник: Infineon Technologies
Description: BRIDGE RECT 1P 2.2KV 360A PB50AT
Packaging: Tray
Package / Case: Module
Mounting Type: Chassis Mount
Diode Type: Single Phase
Operating Temperature: 150°C (TJ)
Technology: Standard
Supplier Device Package: BG-PB50AT-1
Voltage - Peak Reverse (Max): 2.2 kV
Current - Average Rectified (Io): 360 A
Current - Reverse Leakage @ Vr: 25 mA @ 2200 V
товару немає в наявності
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PSB2134HV2.2 psb213x.pdf
PSB2134HV2.2
Виробник: Infineon Technologies
Description: SICOFI-TE FOUR CH CODEC FILTER
Packaging: Bulk
Package / Case: 64-QFP
Mounting Type: Surface Mount
Function: CODEC Filter
Interface: IOM-2 PCM, SPI
Voltage - Supply: 5V
Current - Supply: 26mA
Supplier Device Package: P-MQFP-64
Number of Circuits: 4
Power (Watts): 130 mW
на замовлення 5617 шт:
термін постачання 21-31 дні (днів)
Кількість Ціна
33+643.72 грн
Мінімальне замовлення: 33
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PSB2134HV1.4GD
PSB2134HV1.4GD
Виробник: Infineon Technologies
Description: SICOFI-TE FOUR CH CODEC FILTER
Packaging: Bulk
на замовлення 850 шт:
термін постачання 21-31 дні (днів)
Кількість Ціна
31+699.41 грн
Мінімальне замовлення: 31
В кошику  од. на суму  грн.
IPB65R225C7ATMA2 Infineon-IPB65R225C7-DS-v02_00-en.pdf?fileId=db3a30433e78ea82013e7921c0d800bc
IPB65R225C7ATMA2
Виробник: Infineon Technologies
Description: MOSFET N-CH 650V 11A TO263-3
Packaging: Cut Tape (CT)
Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 11A (Tc)
Rds On (Max) @ Id, Vgs: 225mOhm @ 4.8A, 10V
Power Dissipation (Max): 63W (Tc)
Vgs(th) (Max) @ Id: 4V @ 240µA
Supplier Device Package: PG-TO263-3
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 650 V
Gate Charge (Qg) (Max) @ Vgs: 20 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 996 pF @ 400 V
на замовлення 868 шт:
термін постачання 21-31 дні (днів)
Кількість Ціна
2+225.29 грн
10+141.43 грн
100+98.26 грн
500+74.86 грн
Мінімальне замовлення: 2
В кошику  од. на суму  грн.
IMT40R015M2HXTMA1 Infineon-IMT40R015M2H-DataSheet-v02_00-EN.pdf?fileId=8ac78c8c8eeb092c018f84b72f374933
IMT40R015M2HXTMA1
Виробник: Infineon Technologies
Description: SIC-MOS
Packaging: Tape & Reel (TR)
Package / Case: 8-PowerSFN
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: SiCFET (Silicon Carbide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 11.7A (Ta), 111A (Tc)
Rds On (Max) @ Id, Vgs: 19.1mOhm @ 27.1A, 18V
Power Dissipation (Max): 3.8W (Ta), 341W (Tc)
Vgs(th) (Max) @ Id: 5.6V @ 9.7mA
Supplier Device Package: PG-HSOF-8-2
Drive Voltage (Max Rds On, Min Rds On): 15V, 18V
Vgs (Max): +23V, -7V
Drain to Source Voltage (Vdss): 400 V
Gate Charge (Qg) (Max) @ Vgs: 62 nC @ 18 V
Input Capacitance (Ciss) (Max) @ Vds: 2730 pF @ 200 V
товару немає в наявності
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IMT40R015M2HXTMA1 Infineon-IMT40R015M2H-DataSheet-v02_00-EN.pdf?fileId=8ac78c8c8eeb092c018f84b72f374933
IMT40R015M2HXTMA1
Виробник: Infineon Technologies
Description: SIC-MOS
Packaging: Cut Tape (CT)
Package / Case: 8-PowerSFN
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: SiCFET (Silicon Carbide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 11.7A (Ta), 111A (Tc)
Rds On (Max) @ Id, Vgs: 19.1mOhm @ 27.1A, 18V
Power Dissipation (Max): 3.8W (Ta), 341W (Tc)
Vgs(th) (Max) @ Id: 5.6V @ 9.7mA
Supplier Device Package: PG-HSOF-8-2
Drive Voltage (Max Rds On, Min Rds On): 15V, 18V
Vgs (Max): +23V, -7V
Drain to Source Voltage (Vdss): 400 V
Gate Charge (Qg) (Max) @ Vgs: 62 nC @ 18 V
Input Capacitance (Ciss) (Max) @ Vds: 2730 pF @ 200 V
на замовлення 1917 шт:
термін постачання 21-31 дні (днів)
Кількість Ціна
1+1026.74 грн
10+693.76 грн
100+581.59 грн
500+502.50 грн
1000+488.61 грн
В кошику  од. на суму  грн.
IMBG40R015M2HXTMA1 Infineon-IMBG40R015M2H-DataSheet-v02_00-EN.pdf?fileId=8ac78c8c8eeb092c018f5801017032f3
IMBG40R015M2HXTMA1
Виробник: Infineon Technologies
Description: SIC-MOS
Packaging: Cut Tape (CT)
Package / Case: TO-263-8, D2PAK (7 Leads + Tab), TO-263CA
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: SiC (Silicon Carbide Junction Transistor)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 11.7A (Ta), 111A (Tc)
Rds On (Max) @ Id, Vgs: 19.1mOhm @ 27.1A, 18V
Power Dissipation (Max): 3.8W (Ta), 341W (Tc)
Vgs(th) (Max) @ Id: 5.6V @ 9.7mA
Supplier Device Package: PG-TO263-7-11
Drive Voltage (Max Rds On, Min Rds On): 15V, 18V
Vgs (Max): +23V, -7V
Drain to Source Voltage (Vdss): 400 V
Gate Charge (Qg) (Max) @ Vgs: 62 nC @ 18 V
Input Capacitance (Ciss) (Max) @ Vds: 2730 pF @ 200 V
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IMBG40R015M2HXTMA1 Infineon-IMBG40R015M2H-DataSheet-v02_00-EN.pdf?fileId=8ac78c8c8eeb092c018f5801017032f3
IMBG40R015M2HXTMA1
Виробник: Infineon Technologies
Description: SIC-MOS
Packaging: Tray
Package / Case: TO-263-8, D2PAK (7 Leads + Tab), TO-263CA
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: SiC (Silicon Carbide Junction Transistor)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 11.7A (Ta), 111A (Tc)
Rds On (Max) @ Id, Vgs: 19.1mOhm @ 27.1A, 18V
Power Dissipation (Max): 3.8W (Ta), 341W (Tc)
Vgs(th) (Max) @ Id: 5.6V @ 9.7mA
Supplier Device Package: PG-TO263-7-11
Drive Voltage (Max Rds On, Min Rds On): 15V, 18V
Vgs (Max): +23V, -7V
Drain to Source Voltage (Vdss): 400 V
Gate Charge (Qg) (Max) @ Vgs: 62 nC @ 18 V
Input Capacitance (Ciss) (Max) @ Vds: 2730 pF @ 200 V
на замовлення 1000 шт:
термін постачання 21-31 дні (днів)
Кількість Ціна
1000+609.47 грн
Мінімальне замовлення: 1000
В кошику  од. на суму  грн.
IPB65R225C7ATMA1 DS_IPB65R225C7_2_0.pdf?folderId=db3a3043163797a6011637d4bae7003b&fileId=db3a30433e78ea82013e7921c0d800bc
IPB65R225C7ATMA1
Виробник: Infineon Technologies
Description: MOSFET N-CH 650V 11A D2PAK
Packaging: Cut Tape (CT)
Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 11A (Tc)
Rds On (Max) @ Id, Vgs: 225mOhm @ 4.8A, 10V
Power Dissipation (Max): 63W (Tc)
Vgs(th) (Max) @ Id: 4V @ 240µA
Supplier Device Package: PG-TO263-3
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 650 V
Gate Charge (Qg) (Max) @ Vgs: 20 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 996 pF @ 400 V
товару немає в наявності
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IDWD120E120D7XKSA1 IDWD120E120D7_Rev1.00_12-15-23.pdf
IDWD120E120D7XKSA1
Виробник: Infineon Technologies
Description: DIODE GEN PURP 1200V 177A TO247
Packaging: Tube
Package / Case: TO-247-2
Mounting Type: Through Hole
Speed: Fast Recovery =< 500ns, > 5A (Io)
Reverse Recovery Time (trr): 215 ns
Technology: Standard
Current - Average Rectified (Io): 177A
Supplier Device Package: PG-TO247-2-2
Operating Temperature - Junction: -40°C ~ 175°C
Voltage - DC Reverse (Vr) (Max): 1200 V
Voltage - Forward (Vf) (Max) @ If: 3 V @ 120 A
Current - Reverse Leakage @ Vr: 20 µA @ 1200 V
на замовлення 184 шт:
термін постачання 21-31 дні (днів)
Кількість Ціна
1+444.29 грн
10+386.57 грн
25+368.61 грн
В кошику  од. на суму  грн.
IPAW70R950CEXKSA1 Infineon-IPAW70R950CE-DS-v02_00-EN.pdf?fileId=5546d462576f34750157d20d148c71ef
IPAW70R950CEXKSA1
Виробник: Infineon Technologies
Description: MOSFET N-CH 700V 7.4A TO220-3-31
Packaging: Bulk
Package / Case: TO-220-3 Full Pack
Mounting Type: Through Hole
Operating Temperature: -40°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 7.4A (Tc)
Rds On (Max) @ Id, Vgs: 950mOhm @ 1.5A, 10V
Power Dissipation (Max): 68W (Tc)
Vgs(th) (Max) @ Id: 3.5V @ 150µA
Supplier Device Package: PG-TO220-3-FP
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 700 V
Gate Charge (Qg) (Max) @ Vgs: 15.3 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 328 pF @ 100 V
на замовлення 10800 шт:
термін постачання 21-31 дні (днів)
Кількість Ціна
483+43.71 грн
Мінімальне замовлення: 483
В кошику  од. на суму  грн.
CY91F527USDPMC-GSE2
Виробник: Infineon Technologies
Description: IC MCU 32BT 1.5625MB FLSH 176QFP
Packaging: Tray
Package / Case: 176-LQFP
Mounting Type: Surface Mount
Speed: 128MHz
Program Memory Size: 1.5625MB (1.5625M x 8)
RAM Size: 208K x 8
Operating Temperature: -40°C ~ 125°C (TA)
Oscillator Type: External, Internal
Program Memory Type: FLASH
EEPROM Size: 64K x 8
Core Processor: FR81S
Data Converters: A/D 48x12b SAR; D/A 2x8b
Core Size: 32-Bit
Voltage - Supply (Vcc/Vdd): 2.7V ~ 5.5V
Connectivity: CANbus, EBI/EMI, FlexRay, I2C, LINbus, UART/USART
Peripherals: DMA, LVD, PWM, WDT
Supplier Device Package: 176-LQFP (24x24)
Number of I/O: 115
DigiKey Programmable: Not Verified
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CY3201-06
CY3201-06
Виробник: Infineon Technologies
Description: MCU EMULATOR POD FOR 20-SSOP
Packaging: Bulk
For Use With/Related Products: CY8C26233
Accessory Type: Emulation Pod
на замовлення 4 шт:
термін постачання 21-31 дні (днів)
Кількість Ціна
1+4891.16 грн
В кошику  од. на суму  грн.
CY3201-07
CY3201-07
Виробник: Infineon Technologies
Description: MCU EMULATOR POD FOR 28-SOIC
Packaging: Bulk
For Use With/Related Products: CY8C26443
Accessory Type: Emulation Pod
на замовлення 3 шт:
термін постачання 21-31 дні (днів)
Кількість Ціна
1+4494.75 грн
В кошику  од. на суму  грн.
CY3207ISSP Infineon-CY3207-ISSP_Kit_Quick_Start_Guide-UserManual-v01_00-EN.pdf?fileId=8ac78c8c7d0d8da4017d0eef6ede7f43&utm_source=cypress&utm_medium=referral&utm_campaign=202110_globe_en_all_integration-files
CY3207ISSP
Виробник: Infineon Technologies
Description: PSOC USB IN-SYSTEM PROGRAMMER
Packaging: Bulk
For Use With/Related Products: PSoC Mixed Signal Arrays
Type: Programmer
Contents: Board(s), Cable(s), Power Supply
товару немає в наявності
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CY3203A-CAPSENSE CY3203A-CapSense%20Kit%20Quick%20Start.pdf
CY3203A-CAPSENSE
Виробник: Infineon Technologies
Description: KIT EVAL CAPSENSE CSA
Packaging: Bulk
Interface: LCD
Voltage - Supply: 5V, USB
Sensor Type: Touch, Capacitive
Utilized IC / Part: CY8C20x34
Supplied Contents: Board(s), Cable(s), Accessories
Embedded: Yes, MCU, 8-Bit
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TLE94108ELXUMA1 Infineon-TLE94108EL-DS-v01_00-EN.pdf?fileId=5546d462576f347501579a157dc07d16
TLE94108ELXUMA1
Виробник: Infineon Technologies
Description: IC HALF BRIDGE DRVR 500MA 24SSOP
Packaging: Bulk
Package / Case: 24-LSSOP (0.154", 3.90mm Width) Exposed Pad
Mounting Type: Surface Mount
Interface: SPI
Operating Temperature: -40°C ~ 150°C (TJ)
Output Configuration: Half Bridge (8)
Voltage - Supply: 3V ~ 5.5V
Rds On (Typ): 850mOhm LS, 850mOhm HS
Applications: AC Motors, DC Motors, General Purpose
Current - Output / Channel: 500mA
Current - Peak Output: 2A
Technology: Power MOSFET
Voltage - Load: 5.5V ~ 20V
Supplier Device Package: PG-SSOP-24-4
Fault Protection: Over Temperature, Short Circuit, UVLO
Load Type: Inductive
на замовлення 8914 шт:
термін постачання 21-31 дні (днів)
Кількість Ціна
179+126.24 грн
Мінімальне замовлення: 179
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TLE7233EMXUMA1 fundamentals-of-power-semiconductors
Виробник: Infineon Technologies
Description: IC PWR DRIVER N-CHAN 1:4 24-SSOP
Packaging: Tape & Reel (TR)
Package / Case: 24-LSSOP (0.154", 3.90mm Width) Exposed Pad
Output Type: N-Channel
Mounting Type: Surface Mount
Number of Outputs: 4
Interface: SPI
Switch Type: General Purpose
Operating Temperature: -40°C ~ 150°C (TJ)
Output Configuration: Low Side
Rds On (Typ): 1Ohm
Voltage - Load: 4.5V ~ 5.5V
Voltage - Supply (Vcc/Vdd): 3V ~ 5.5V
Current - Output (Max): 470mA
Ratio - Input:Output: 1:4
Supplier Device Package: PG-SSOP-24-4
Fault Protection: Open Load Detect, Over Temperature
Grade: Automotive
Qualification: AEC-Q100
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DZ540N26KHPSA1 DZ540N.pdf
DZ540N26KHPSA1
Виробник: Infineon Technologies
Description: DIODE GEN PURP 2.6KV 732A MODULE
Packaging: Tray
Package / Case: Module
Mounting Type: Chassis Mount
Speed: Standard Recovery >500ns, > 200mA (Io)
Technology: Standard
Current - Average Rectified (Io): 732A
Supplier Device Package: Module
Operating Temperature - Junction: -40°C ~ 150°C
Voltage - DC Reverse (Vr) (Max): 2600 V
Voltage - Forward (Vf) (Max) @ If: 1.64 V @ 2200 A
Current - Reverse Leakage @ Vr: 40 mA @ 2600 V
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T740N26TOFPRXOSA1
Виробник: Infineon Technologies
Description: DIODE BG-T5814K0-1
Packaging: Tray
Package / Case: TO-200AB, A-PUK
Mounting Type: Clamp On
Operating Temperature: -40°C ~ 125°C
Structure: Single
Current - Hold (Ih) (Max): 300 mA
Current - Gate Trigger (Igt) (Max): 250 mA
Current - Non Rep. Surge 50, 60Hz (Itsm): 13000A @ 50Hz
Number of SCRs, Diodes: 1 SCR
Current - On State (It (AV)) (Max): 745 A
Voltage - Gate Trigger (Vgt) (Max): 2.2 V
Current - On State (It (RMS)) (Max): 1500 A
Voltage - Off State: 2.6 kV
товару немає в наявності
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ISZ173N15NM6ATMA1 Infineon-ISZ173N15NM6-DataSheet-v02_00-EN.pdf?fileId=8ac78c8c90530b3a019077406e337014
ISZ173N15NM6ATMA1
Виробник: Infineon Technologies
Description: TRENCH >=100V
Packaging: Tape & Reel (TR)
Package / Case: 8-PowerTDFN
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 7.9A (Ta), 48A (Tc)
Rds On (Max) @ Id, Vgs: 16.3mOhm @ 16A, 15V
Power Dissipation (Max): 2.5W (Ta), 94W (Tc)
Vgs(th) (Max) @ Id: 4V @ 35µA
Supplier Device Package: PG-TSDSON-8 FL
Drive Voltage (Max Rds On, Min Rds On): 8V, 15V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 150 V
Gate Charge (Qg) (Max) @ Vgs: 19.2 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 1300 pF @ 75 V
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ISZ173N15NM6ATMA1 Infineon-ISZ173N15NM6-DataSheet-v02_00-EN.pdf?fileId=8ac78c8c90530b3a019077406e337014
ISZ173N15NM6ATMA1
Виробник: Infineon Technologies
Description: TRENCH >=100V
Packaging: Cut Tape (CT)
Package / Case: 8-PowerTDFN
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 7.9A (Ta), 48A (Tc)
Rds On (Max) @ Id, Vgs: 16.3mOhm @ 16A, 15V
Power Dissipation (Max): 2.5W (Ta), 94W (Tc)
Vgs(th) (Max) @ Id: 4V @ 35µA
Supplier Device Package: PG-TSDSON-8 FL
Drive Voltage (Max Rds On, Min Rds On): 8V, 15V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 150 V
Gate Charge (Qg) (Max) @ Vgs: 19.2 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 1300 pF @ 75 V
на замовлення 4906 шт:
термін постачання 21-31 дні (днів)
Кількість Ціна
2+184.47 грн
10+132.28 грн
100+101.12 грн
500+77.02 грн
1000+75.08 грн
Мінімальне замовлення: 2
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IPQC60R010S7AXTMA1 Infineon-IPQC60R010S7A-DataSheet-v02_00-EN.pdf?fileId=8ac78c8c850f4bee0185150c5c7a6cf0
IPQC60R010S7AXTMA1
Виробник: Infineon Technologies
Description: MOSFET
Packaging: Tape & Reel (TR)
Package / Case: 22-PowerBSOP Module
Mounting Type: Surface Mount
Operating Temperature: -40°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 50A (Tc)
Rds On (Max) @ Id, Vgs: 10mOhm @ 50A, 12V
Power Dissipation (Max): 694W (Tc)
Vgs(th) (Max) @ Id: 4.5V @ 3.08mA
Supplier Device Package: PG-HDSOP-22
Grade: Automotive
Drive Voltage (Max Rds On, Min Rds On): 12V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 600 V
Gate Charge (Qg) (Max) @ Vgs: 318 nC @ 12 V
Qualification: AEC-Q101
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IPQC60R010S7AXTMA1 Infineon-IPQC60R010S7A-DataSheet-v02_00-EN.pdf?fileId=8ac78c8c850f4bee0185150c5c7a6cf0
IPQC60R010S7AXTMA1
Виробник: Infineon Technologies
Description: MOSFET
Packaging: Cut Tape (CT)
Package / Case: 22-PowerBSOP Module
Mounting Type: Surface Mount
Operating Temperature: -40°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 50A (Tc)
Rds On (Max) @ Id, Vgs: 10mOhm @ 50A, 12V
Power Dissipation (Max): 694W (Tc)
Vgs(th) (Max) @ Id: 4.5V @ 3.08mA
Supplier Device Package: PG-HDSOP-22
Grade: Automotive
Drive Voltage (Max Rds On, Min Rds On): 12V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 600 V
Gate Charge (Qg) (Max) @ Vgs: 318 nC @ 12 V
Qualification: AEC-Q101
на замовлення 660 шт:
термін постачання 21-31 дні (днів)
Кількість Ціна
1+1420.80 грн
10+1021.60 грн
100+937.85 грн
В кошику  од. на суму  грн.
CY29942AXCT Infineon-CY29942AXC-DataSheet-v13_00-EN.pdf?fileId=8ac78c8c7d0d8da4017d0ebd015d2ef5&utm_source=cypress&utm_medium=referral&utm_campaign=202110_globe_en_all_integration-files
CY29942AXCT
Виробник: Infineon Technologies
Description: IC CLK BUFFER 1:18 200MHZ 32TQFP
Packaging: Bulk
Package / Case: 32-LQFP
Number of Circuits: 1
Mounting Type: Surface Mount
Output: LVCMOS, LVTTL
Type: Fanout Buffer (Distribution)
Input: LVCMOS, LVTTL
Operating Temperature: 0°C ~ 70°C
Voltage - Supply: 2.375V ~ 3.465V
Ratio - Input:Output: 1:18
Differential - Input:Output: No/No
Supplier Device Package: 32-TQFP (7x7)
Frequency - Max: 200 MHz
на замовлення 4000 шт:
термін постачання 21-31 дні (днів)
Кількість Ціна
19+1123.87 грн
Мінімальне замовлення: 19
В кошику  од. на суму  грн.
CY29942AXI Infineon-CY29942AXC-DataSheet-v13_00-EN.pdf?fileId=8ac78c8c7d0d8da4017d0ebd015d2ef5&utm_source=cypress&utm_medium=referral&utm_campaign=202110_globe_en_all_integration-files
CY29942AXI
Виробник: Infineon Technologies
Description: IC CLK BUFFER 1:18 200MHZ 32TQFP
Packaging: Tray
Package / Case: 32-LQFP
Number of Circuits: 1
Mounting Type: Surface Mount
Output: LVCMOS, LVTTL
Type: Fanout Buffer (Distribution)
Input: LVCMOS, LVTTL
Operating Temperature: -40°C ~ 85°C
Voltage - Supply: 2.375V ~ 3.465V
Ratio - Input:Output: 1:18
Differential - Input:Output: No/No
Supplier Device Package: 32-TQFP (7x7)
Frequency - Max: 200 MHz
на замовлення 554 шт:
термін постачання 21-31 дні (днів)
Кількість Ціна
12+1850.11 грн
Мінімальне замовлення: 12
В кошику  од. на суму  грн.
CY29942AXI Infineon-CY29942AXC-DataSheet-v13_00-EN.pdf?fileId=8ac78c8c7d0d8da4017d0ebd015d2ef5&utm_source=cypress&utm_medium=referral&utm_campaign=202110_globe_en_all_integration-files
CY29942AXI
Виробник: Infineon Technologies
Description: IC CLK BUFFER 1:18 200MHZ 32TQFP
Packaging: Tray
Package / Case: 32-LQFP
Number of Circuits: 1
Mounting Type: Surface Mount
Output: LVCMOS, LVTTL
Type: Fanout Buffer (Distribution)
Input: LVCMOS, LVTTL
Operating Temperature: -40°C ~ 85°C
Voltage - Supply: 2.375V ~ 3.465V
Ratio - Input:Output: 1:18
Differential - Input:Output: No/No
Supplier Device Package: 32-TQFP (7x7)
Frequency - Max: 200 MHz
товару немає в наявності
В кошику  од. на суму  грн.
TLE5046MTICPW2100HALA1
TLE5046MTICPW2100HALA1
Виробник: Infineon Technologies
Description: SPEED & CURRENT SENSORS
Packaging: Tape & Box (TB)
товару немає в наявності
В кошику  од. на суму  грн.
DD600N18KXPSA1 Infineon-DD600N-DS-v03_02-EN.pdf?fileId=db3a304412b407950112b42fbcc44d54
DD600N18KXPSA1
Виробник: Infineon Technologies
Description: DIODE MODULE GP 1800V BGPB60E2A1
Packaging: Tray
Package / Case: Module
Mounting Type: Chassis Mount
Speed: Standard Recovery >500ns, > 200mA (Io)
Technology: Standard
Diode Configuration: 1 Pair Series Connection
Current - Average Rectified (Io) (per Diode): 600A
Supplier Device Package: BG-PB60E2A-1
Operating Temperature - Junction: 150°C
Voltage - DC Reverse (Vr) (Max): 1800 V
Voltage - Forward (Vf) (Max) @ If: 1.32 V @ 1.8 kA
Current - Reverse Leakage @ Vr: 40 mA @ 1800 V
товару немає в наявності
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IRAM136-1060A IRAM136-1060A.pdf
IRAM136-1060A
Виробник: Infineon Technologies
Description: IC MOD PWR HYBRID 600V 10A MOTOR
Packaging: Tube
Package / Case: 29-PowerSSIP Module, 21 Leads, Formed Leads
Mounting Type: Through Hole
Type: IGBT
Configuration: 3 Phase
Voltage - Isolation: 2000Vrms
Current: 10 A
Voltage: 600 V
на замовлення 99 шт:
термін постачання 21-31 дні (днів)
Кількість Ціна
22+1033.95 грн
Мінімальне замовлення: 22
В кошику  од. на суму  грн.
IRAM136-1060A IRAM136-1060A.pdf
IRAM136-1060A
Виробник: Infineon Technologies
Description: IC MOD PWR HYBRID 600V 10A MOTOR
Packaging: Tube
Package / Case: 29-PowerSSIP Module, 21 Leads, Formed Leads
Mounting Type: Through Hole
Type: IGBT
Configuration: 3 Phase
Voltage - Isolation: 2000Vrms
Current: 10 A
Voltage: 600 V
товару немає в наявності
В кошику  од. на суму  грн.
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