Продукція > INFINEON TECHNOLOGIES > Всі товари виробника INFINEON TECHNOLOGIES (148384) > Сторінка 740 з 2474
| Фото | Назва | Виробник | Інформація |
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IRF150DM115XTMA1 | Infineon Technologies |
 Description: TRENCH >=100V DIRECTFETPackaging: Cut Tape (CT) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Drain to Source Voltage (Vdss): 150 V |
товару немає в наявності |
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IPTG025N15NM6ATMA1 | Infineon Technologies |
Description: TRENCH >=100V Packaging: Cut Tape (CT) Package / Case: 8-PowerSMD, Gull Wing Mounting Type: Surface Mount Operating Temperature: -55°C ~ 175°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 26A (Ta), 264A (Tc) Rds On (Max) @ Id, Vgs: 2.4mOhm @ 120A, 15V Power Dissipation (Max): 3.8W (Ta), 395W (Tc) Vgs(th) (Max) @ Id: 4V @ 275µA Supplier Device Package: PG-HSOG-8-1 Drive Voltage (Max Rds On, Min Rds On): 8V, 15V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 150 V Gate Charge (Qg) (Max) @ Vgs: 137 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 9800 pF @ 75 V |
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IPTG025N15NM6ATMA1 | Infineon Technologies |
Description: TRENCH >=100V Packaging: Tape & Reel (TR) Package / Case: 8-PowerSMD, Gull Wing Mounting Type: Surface Mount Operating Temperature: -55°C ~ 175°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 26A (Ta), 264A (Tc) Rds On (Max) @ Id, Vgs: 2.4mOhm @ 120A, 15V Power Dissipation (Max): 3.8W (Ta), 395W (Tc) Vgs(th) (Max) @ Id: 4V @ 275µA Supplier Device Package: PG-HSOG-8-1 Drive Voltage (Max Rds On, Min Rds On): 8V, 15V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 150 V Gate Charge (Qg) (Max) @ Vgs: 137 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 9800 pF @ 75 V |
товару немає в наявності |
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IPB95R130PFD7ATMA1 | Infineon Technologies |
Description: HIGH POWER_NEW Packaging: Tape & Reel (TR) Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB Mounting Type: Surface Mount Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 36.5A (Tc) Rds On (Max) @ Id, Vgs: 130mOhm @ 25.1A, 10V Power Dissipation (Max): 227W (Tc) Vgs(th) (Max) @ Id: 3.5V @ 1.25mA Supplier Device Package: PG-TO263-3-2 Drive Voltage (Max Rds On, Min Rds On): 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 950 V Gate Charge (Qg) (Max) @ Vgs: 141 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 4170 pF @ 400 V |
на замовлення 1000 шт: термін постачання 21-31 дні (днів) |
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IPB95R130PFD7ATMA1 | Infineon Technologies |
Description: HIGH POWER_NEW Packaging: Cut Tape (CT) Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB Mounting Type: Surface Mount Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 36.5A (Tc) Rds On (Max) @ Id, Vgs: 130mOhm @ 25.1A, 10V Power Dissipation (Max): 227W (Tc) Vgs(th) (Max) @ Id: 3.5V @ 1.25mA Supplier Device Package: PG-TO263-3-2 Drive Voltage (Max Rds On, Min Rds On): 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 950 V Gate Charge (Qg) (Max) @ Vgs: 141 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 4170 pF @ 400 V |
на замовлення 1678 шт: термін постачання 21-31 дні (днів) |
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| CG8354AF | Infineon Technologies |
Description: IC USB PERIPHERAL HS 56QFN Packaging: Tray DigiKey Programmable: Not Verified |
на замовлення 2388 шт: термін постачання 21-31 дні (днів) |
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| CG8354AF | Infineon Technologies |
Description: IC USB PERIPHERAL HS 56QFN Packaging: Tray DigiKey Programmable: Not Verified |
товару немає в наявності |
В кошику од. на суму грн. | |||||||||||
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CG8352AF | Infineon Technologies |
Description: IC USB PERIPHERAL HS 56QFN Packaging: Tray DigiKey Programmable: Not Verified |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||||
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TLD609812BEVALTOBO1 | Infineon Technologies |
Description: EVAL BOARD FOR TLD6098-1EP Features: Dimmable Packaging: Bulk Voltage - Input: 8V ~ 27V Contents: Board(s) Current - Output / Channel: 1A Utilized IC / Part: TLD6098-1EP Supplied Contents: Board(s) Outputs and Type: 1 Non-Isolated Output |
на замовлення 2 шт: термін постачання 21-31 дні (днів) |
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IR3865MTRPBF | Infineon Technologies |
Description: IC REG BUCK ADJ 10A 17PWRQFN Packaging: Tape & Reel (TR) Package / Case: 17-PowerVQFN Output Type: Adjustable Mounting Type: Surface Mount Number of Outputs: 1 Function: Step-Down Current - Output: 10A Operating Temperature: -40°C ~ 125°C (TJ) Output Configuration: Positive Frequency - Switching: Up to 750kHz Voltage - Input (Max): 21V Topology: Buck Supplier Device Package: 17-PowerQFN (4x5) Synchronous Rectifier: Yes Voltage - Output (Max): 12V Voltage - Input (Min): 3V Voltage - Output (Min/Fixed): 0.5V |
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| TDA19988BHN/C1,551 | Infineon Technologies |
Description: TDA19988NHD1.transmittwithoHDenc Packaging: Bulk |
на замовлення 240 шт: термін постачання 21-31 дні (днів) |
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SGB15N60HSATMA1 | Infineon Technologies |
Description: IGBT NPT 600V 27A TO263-3-2 Packaging: Tape & Reel (TR) Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB Mounting Type: Surface Mount Operating Temperature: -55°C ~ 150°C (TJ) Input Type: Standard Vce(on) (Max) @ Vge, Ic: 3.15V @ 15V, 15A Supplier Device Package: PG-TO263-3-2 IGBT Type: NPT Td (on/off) @ 25°C: 13ns/209ns Switching Energy: 530µJ Test Condition: 400V, 15A, 23Ohm, 15V Gate Charge: 80 nC Current - Collector (Ic) (Max): 27 A Voltage - Collector Emitter Breakdown (Max): 600 V Current - Collector Pulsed (Icm): 60 A Power - Max: 138 W |
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AIMZH120R040M1TXKSA1 | Infineon Technologies |
Description: SIC_DISCRETE Packaging: Tube Package / Case: TO-247-4 Mounting Type: Through Hole Operating Temperature: -55°C ~ 175°C (TJ) Technology: SiCFET (Silicon Carbide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 55A (Tc) Rds On (Max) @ Id, Vgs: 50mOhm @ 20A, 20V Power Dissipation (Max): 268W (Tc) Vgs(th) (Max) @ Id: 5.1V @ 6.4mA Supplier Device Package: PG-TO247-4-11 Grade: Automotive Drive Voltage (Max Rds On, Min Rds On): 18V, 20V Vgs (Max): +23V, -5V Drain to Source Voltage (Vdss): 1200 V Gate Charge (Qg) (Max) @ Vgs: 43 nC @ 20 V Input Capacitance (Ciss) (Max) @ Vds: 1264 pF @ 800 V Qualification: AEC-Q101 |
на замовлення 216 шт: термін постачання 21-31 дні (днів) |
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BTS721L1 | Infineon Technologies |
Description: IC PWR SWITCH N-CHAN 1:1 PDSO-20 Features: Auto Restart, Status Flag Packaging: Tape & Reel (TR) Package / Case: 20-SOIC (0.295", 7.50mm Width) Output Type: N-Channel Mounting Type: Surface Mount Number of Outputs: 4 Interface: On/Off Switch Type: General Purpose Operating Temperature: -40°C ~ 150°C (TJ) Output Configuration: High Side Rds On (Typ): 85mOhm Input Type: Non-Inverting Voltage - Load: 5V ~ 34V Voltage - Supply (Vcc/Vdd): Not Required Current - Output (Max): 2.5A Ratio - Input:Output: 1:1 Supplier Device Package: PG-DSO-20 Fault Protection: Current Limiting (Fixed), Open Load Detect, Over Temperature, Over Voltage Grade: Automotive Qualification: AEC-Q100 |
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DD600N12KHPSA2 | Infineon Technologies |
Description: DIODE MODULE GP 1.2KV 600A Packaging: Tray Package / Case: Module Mounting Type: Chassis Mount Speed: Standard Recovery >500ns, > 200mA (Io) Technology: Standard Diode Configuration: 1 Pair Series Connection Current - Average Rectified (Io) (per Diode): 600A Supplier Device Package: Module Operating Temperature - Junction: -40°C ~ 150°C Voltage - DC Reverse (Vr) (Max): 1200 V Voltage - Forward (Vf) (Max) @ If: 1.32 V @ 1800 A Current - Reverse Leakage @ Vr: 40 mA @ 1200 V |
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| CYW55501IUBGTXTMA1 | Infineon Technologies |
Description: WI-FI COMBO IOT Packaging: Tape & Reel (TR) |
товару немає в наявності |
В кошику од. на суму грн. | |||||||||||
| CYW55502IUBGTXTMA1 | Infineon Technologies |
Description: WI-FI COMBO IOT Packaging: Tray |
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В кошику од. на суму грн. | |||||||||||
| CYW55503IUBGTXTMA1 | Infineon Technologies |
Description: WI-FI COMBO IOT Packaging: Tube |
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В кошику од. на суму грн. | |||||||||||
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CYW55511IUBGTXTMA1 | Infineon Technologies |
Description: WI-FI COMBO IOT Packaging: Tape & Reel (TR) Package / Case: 143-BGA, WLBGA Sensitivity: -105.5dBm Mounting Type: Surface Mount Memory Size: 3.6MB ROM, 1.7MB SRAM Type: TxRx + MCU Operating Temperature: -40°C ~ 85°C Voltage - Supply: 3V ~ 4.8V Power - Output: 19dBm Protocol: Bluetooth v5.4 Data Rate (Max): 2Mbps Supplier Device Package: SG-XFWLB-143 GPIO: 39 Modulation: OFDM RF Family/Standard: 802.15.4 Serial Interfaces: I2C, SDIO, SPI, UART |
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CYW55512IUBGTXTMA1 | Infineon Technologies |
Description: WI-FI COMBO IOT Packaging: Tape & Reel (TR) Package / Case: 143-BGA, WLBGA Sensitivity: -105.5dBm Mounting Type: Surface Mount Frequency: 2.4GHz ~ 5GHz Memory Size: 3.6MB ROM, 1.7MB SRAM Type: TxRx + MCU Operating Temperature: -40°C ~ 85°C Voltage - Supply: 3V ~ 4.8V Power - Output: 19dBm Protocol: Bluetooth v5.4 Data Rate (Max): 2Mbps Supplier Device Package: SG-XFWLB-143 GPIO: 39 Modulation: OFDM RF Family/Standard: 802.15.4 Serial Interfaces: I2C, SDIO, SPI, UART |
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В кошику од. на суму грн. | ||||||||||
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CYW55513IUBGT | Infineon Technologies |
Description: WI-FI COMBO IOT Packaging: Tape & Reel (TR) Package / Case: 143-BGA, WLBGA Sensitivity: -105.5dBm Mounting Type: Surface Mount Frequency: 2.4GHz ~ 6GHz Memory Size: 3.6MB ROM, 1.7MB SRAM Type: TxRx + MCU Operating Temperature: -40°C ~ 85°C Voltage - Supply: 3V ~ 4.8V Power - Output: 19dBm Protocol: Bluetooth v5.4 Data Rate (Max): 2Mbps Supplier Device Package: SG-XFWLB-143 GPIO: 39 Modulation: OFDM RF Family/Standard: 802.15.4 Serial Interfaces: I2C, SDIO, SPI, UART |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||||
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CY8C3666AXI-036 | Infineon Technologies |
Description: IC MCU 8BIT 64KB FLASH 100TQFP Packaging: Tray Package / Case: 100-LQFP Mounting Type: Surface Mount Speed: 67MHz Program Memory Size: 64KB (64K x 8) RAM Size: 8K x 8 Operating Temperature: -40°C ~ 85°C (TA) Oscillator Type: Internal Program Memory Type: FLASH EEPROM Size: 2K x 8 Core Processor: 8051 Data Converters: A/D 16x12b; D/A 4x8b Core Size: 8-Bit Voltage - Supply (Vcc/Vdd): 1.71V ~ 5.5V Connectivity: EBI/EMI, I2C, LINbus, SPI, UART/USART, USB Peripherals: CapSense, DMA, LCD, POR, PWM, WDT Supplier Device Package: 100-TQFP (14x14) Number of I/O: 62 DigiKey Programmable: Not Verified |
на замовлення 315 шт: термін постачання 21-31 дні (днів) |
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CY8C3666LTI-201T | Infineon Technologies |
Description: IC MCU 8BIT 64KB FLASH 68QFN Packaging: Tape & Reel (TR) Package / Case: 68-VFQFN Exposed Pad Mounting Type: Surface Mount Speed: 67MHz Program Memory Size: 64KB (64K x 8) RAM Size: 8K x 8 Operating Temperature: -40°C ~ 85°C (TA) Oscillator Type: Internal Program Memory Type: FLASH EEPROM Size: 2K x 8 Core Processor: 8051 Data Converters: A/D 16x12b; D/A 2x8b Core Size: 8-Bit Voltage - Supply (Vcc/Vdd): 1.71V ~ 5.5V Connectivity: EBI/EMI, I2C, LINbus, SPI, UART/USART Peripherals: CapSense, DMA, LCD, POR, PWM, WDT Supplier Device Package: 68-QFN (8x8) Number of I/O: 38 DigiKey Programmable: Not Verified |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||||
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CY8C3665LTI-044T | Infineon Technologies |
Description: IC MCU 8BIT 32KB FLASH 68QFN Packaging: Tape & Reel (TR) Package / Case: 68-VFQFN Exposed Pad Mounting Type: Surface Mount Speed: 67MHz Program Memory Size: 32KB (32K x 8) RAM Size: 4K x 8 Operating Temperature: -40°C ~ 85°C (TA) Oscillator Type: Internal Program Memory Type: FLASH EEPROM Size: 1K x 8 Core Processor: 8051 Data Converters: A/D 16x12b; D/A 4x8b Core Size: 8-Bit Voltage - Supply (Vcc/Vdd): 1.71V ~ 5.5V Connectivity: EBI/EMI, I2C, LINbus, SPI, UART/USART, USB Peripherals: CapSense, DMA, POR, PWM, WDT Supplier Device Package: 68-QFN (8x8) Number of I/O: 38 DigiKey Programmable: Not Verified |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||||
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CY8C3666LTI-203T | Infineon Technologies |
Description: IC MCU 8BIT 64KB FLASH 68QFN Packaging: Tape & Reel (TR) Package / Case: 68-VFQFN Exposed Pad Mounting Type: Surface Mount Speed: 67MHz Program Memory Size: 64KB (64K x 8) RAM Size: 8K x 8 Operating Temperature: -40°C ~ 85°C (TA) Oscillator Type: Internal Program Memory Type: FLASH EEPROM Size: 2K x 8 Core Processor: 8051 Data Converters: A/D 16x12b; D/A 4x8b Core Size: 8-Bit Voltage - Supply (Vcc/Vdd): 1.71V ~ 5.5V Connectivity: EBI/EMI, I2C, LINbus, SPI, UART/USART Peripherals: CapSense, DMA, LCD, POR, PWM, WDT Supplier Device Package: 68-QFN (8x8) Number of I/O: 38 DigiKey Programmable: Not Verified |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||||
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CY8C3666AXI-037T | Infineon Technologies |
Description: IC MCU 8BIT 64KB FLASH 100TQFP Packaging: Tape & Reel (TR) Package / Case: 100-LQFP Mounting Type: Surface Mount Speed: 67MHz Program Memory Size: 64KB (64K x 8) RAM Size: 8K x 8 Operating Temperature: -40°C ~ 85°C (TA) Oscillator Type: Internal Program Memory Type: FLASH EEPROM Size: 2K x 8 Core Processor: 8051 Data Converters: A/D 16x12b; D/A 4x8b Core Size: 8-Bit Voltage - Supply (Vcc/Vdd): 1.71V ~ 5.5V Connectivity: CANbus, EBI/EMI, I2C, LINbus, SPI, UART/USART Peripherals: CapSense, DMA, LCD, POR, PWM, WDT Supplier Device Package: 100-TQFP (14x14) Number of I/O: 62 DigiKey Programmable: Not Verified |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||||
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CY8C3666LTI-050T | Infineon Technologies |
Description: IC MCU 8BIT 64KB FLASH 48QFN Packaging: Tape & Reel (TR) Package / Case: 48-VFQFN Exposed Pad Mounting Type: Surface Mount Speed: 67MHz Program Memory Size: 64KB (64K x 8) RAM Size: 8K x 8 Operating Temperature: -40°C ~ 85°C (TA) Oscillator Type: Internal Program Memory Type: FLASH EEPROM Size: 2K x 8 Core Processor: 8051 Data Converters: A/D 16x12b; D/A 4x8b Core Size: 8-Bit Voltage - Supply (Vcc/Vdd): 1.71V ~ 5.5V Connectivity: EBI/EMI, I2C, LINbus, SPI, UART/USART, USB Peripherals: CapSense, DMA, LCD, POR, PWM, WDT Supplier Device Package: 48-QFN (7x7) Number of I/O: 25 DigiKey Programmable: Not Verified |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||||
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CY8C3865LTI-014T | Infineon Technologies |
Description: IC MCU 8BIT 32KB FLASH 68QFN Packaging: Tape & Reel (TR) Package / Case: 68-VFQFN Exposed Pad Mounting Type: Surface Mount Speed: 67MHz Program Memory Size: 32KB (32K x 8) RAM Size: 4K x 8 Operating Temperature: -40°C ~ 85°C (TA) Oscillator Type: Internal Program Memory Type: FLASH EEPROM Size: 1K x 8 Core Processor: 8051 Data Converters: A/D 16x20b; D/A 4x8b Core Size: 8-Bit Voltage - Supply (Vcc/Vdd): 1.71V ~ 5.5V Connectivity: EBI/EMI, I2C, LINbus, SPI, UART/USART, USB Peripherals: CapSense, DMA, LCD, POR, PWM, WDT Supplier Device Package: 68-QFN (8x8) Number of I/O: 38 DigiKey Programmable: Not Verified |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||||
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CY8C3666LTI-027T | Infineon Technologies |
Description: IC MCU 8BIT 64KB FLASH 68QFN Packaging: Tape & Reel (TR) Package / Case: 68-VFQFN Exposed Pad Mounting Type: Surface Mount Speed: 67MHz Program Memory Size: 64KB (64K x 8) RAM Size: 8K x 8 Operating Temperature: -40°C ~ 85°C (TA) Oscillator Type: Internal Program Memory Type: FLASH EEPROM Size: 2K x 8 Core Processor: 8051 Data Converters: A/D 16x12b; D/A 4x8b Core Size: 8-Bit Voltage - Supply (Vcc/Vdd): 1.71V ~ 5.5V Connectivity: EBI/EMI, I2C, LINbus, SPI, UART/USART, USB Peripherals: CapSense, DMA, LCD, POR, PWM, WDT Supplier Device Package: 68-QFN (8x8) Number of I/O: 38 DigiKey Programmable: Not Verified |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||||
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CY8C3865AXI-019T | Infineon Technologies |
Description: IC MCU 8BIT 32KB FLASH 100TQFP Packaging: Tape & Reel (TR) Package / Case: 100-LQFP Mounting Type: Surface Mount Speed: 67MHz Program Memory Size: 32KB (32K x 8) RAM Size: 4K x 8 Operating Temperature: -40°C ~ 85°C (TA) Oscillator Type: Internal Program Memory Type: FLASH EEPROM Size: 1K x 8 Core Processor: 8051 Data Converters: A/D 16x20b; D/A 4x8b Core Size: 8-Bit Voltage - Supply (Vcc/Vdd): 1.71V ~ 5.5V Connectivity: EBI/EMI, I2C, LINbus, SPI, UART/USART, USB Peripherals: CapSense, DMA, LCD, POR, PWM, WDT Supplier Device Package: 100-TQFP (14x14) Number of I/O: 62 DigiKey Programmable: Not Verified |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||||
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CY8C3865LTI-014 | Infineon Technologies |
Description: IC MCU 8BIT 32KB FLASH 68QFN Packaging: Tray Package / Case: 68-VFQFN Exposed Pad Mounting Type: Surface Mount Speed: 67MHz Program Memory Size: 32KB (32K x 8) RAM Size: 4K x 8 Operating Temperature: -40°C ~ 85°C (TA) Oscillator Type: Internal Program Memory Type: FLASH EEPROM Size: 1K x 8 Core Processor: 8051 Data Converters: A/D 16x20b; D/A 4x8b Core Size: 8-Bit Voltage - Supply (Vcc/Vdd): 1.71V ~ 5.5V Connectivity: EBI/EMI, I2C, LINbus, SPI, UART/USART, USB Peripherals: CapSense, DMA, LCD, POR, PWM, WDT Supplier Device Package: 68-QFN (8x8) Number of I/O: 38 DigiKey Programmable: Not Verified |
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В кошику од. на суму грн. | ||||||||||
| FZ2400R17KF6CB2S1NDSA1 | Infineon Technologies |
Description: IGBT MODULE 1700V 2400A Packaging: Tray |
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В кошику од. на суму грн. | |||||||||||
| FZ1600R17KF6CB2S2NOSA1 | Infineon Technologies |
Description: IGBT MODULE A-IHM130-1 Packaging: Tray |
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В кошику од. на суму грн. | |||||||||||
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IRFZ44VPBF | Infineon Technologies |
Description: MOSFET N-CH 60V 55A TO220AB Packaging: Tube Package / Case: TO-220-3 Mounting Type: Through Hole Operating Temperature: -55°C ~ 175°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 55A (Tc) Rds On (Max) @ Id, Vgs: 16.5mOhm @ 31A, 10V Power Dissipation (Max): 115W (Tc) Vgs(th) (Max) @ Id: 4V @ 250µA Supplier Device Package: TO-220AB Drive Voltage (Max Rds On, Min Rds On): 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 60 V Gate Charge (Qg) (Max) @ Vgs: 67 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 1812 pF @ 25 V |
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В кошику од. на суму грн. | ||||||||||
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IR3892MTRPBF | Infineon Technologies |
Description: IC REG BUCK ADJ 6A DL PQFN Packaging: Tape & Reel (TR) Package / Case: 31-PowerVFQFN Output Type: Adjustable Mounting Type: Surface Mount Number of Outputs: 2 Function: Step-Down Current - Output: 6A Operating Temperature: -40°C ~ 125°C (TJ) Output Configuration: Positive Frequency - Switching: 300kHz ~ 1MHz Voltage - Input (Max): 21V Topology: Buck Supplier Device Package: 31-PQFN (5x6) Synchronous Rectifier: Yes Voltage - Output (Max): 18.06V Voltage - Input (Min): 1V Voltage - Output (Min/Fixed): 0.5V |
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В кошику од. на суму грн. | ||||||||||
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CY62147DV30LL-70BVXA | Infineon Technologies |
Description: IC SRAM 4MBIT PARALLEL 48VFBGA Packaging: Tray Package / Case: 48-VFBGA Mounting Type: Surface Mount Memory Size: 4Mbit Memory Type: Volatile Operating Temperature: -40°C ~ 85°C (TA) Voltage - Supply: 2.2V ~ 3.6V Technology: SRAM - Asynchronous Memory Format: SRAM Supplier Device Package: 48-VFBGA (6x8) Write Cycle Time - Word, Page: 70ns Memory Interface: Parallel Access Time: 70 ns Memory Organization: 256K x 16 DigiKey Programmable: Not Verified |
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В кошику од. на суму грн. | ||||||||||
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CY62147DV30L-55BVXE | Infineon Technologies |
Description: IC SRAM 4MBIT PARALLEL 48VFBGA Packaging: Tray Package / Case: 48-VFBGA Mounting Type: Surface Mount Memory Size: 4Mbit Memory Type: Volatile Operating Temperature: -40°C ~ 125°C (TA) Voltage - Supply: 2.2V ~ 3.6V Technology: SRAM - Asynchronous Memory Format: SRAM Supplier Device Package: 48-VFBGA (6x8) Write Cycle Time - Word, Page: 55ns Memory Interface: Parallel Access Time: 55 ns Memory Organization: 256K x 16 DigiKey Programmable: Not Verified |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||||
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CY62147DV30L-55ZSXE | Infineon Technologies |
Description: IC SRAM 4MBIT PARALLEL 44TSOP II Packaging: Tube Package / Case: 44-TSOP (0.400", 10.16mm Width) Mounting Type: Surface Mount Memory Size: 4Mbit Memory Type: Volatile Operating Temperature: -40°C ~ 125°C (TA) Voltage - Supply: 2.2V ~ 3.6V Technology: SRAM - Asynchronous Memory Format: SRAM Supplier Device Package: 44-TSOP II Write Cycle Time - Word, Page: 55ns Memory Interface: Parallel Access Time: 55 ns Memory Organization: 256K x 16 DigiKey Programmable: Not Verified |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||||
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IPS021S | Infineon Technologies |
 Description: IC PWR SWITCH N-CHAN 1:1 D2PAKPackaging: Tube Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB Output Type: N-Channel Mounting Type: Surface Mount Number of Outputs: 1 Interface: On/Off Switch Type: General Purpose Operating Temperature: -40°C ~ 150°C (TJ) Output Configuration: Low Side Rds On (Typ): 130mOhm Input Type: Non-Inverting Voltage - Load: 35V (Max) Voltage - Supply (Vcc/Vdd): Not Required Current - Output (Max): 1.8A Ratio - Input:Output: 1:1 Supplier Device Package: D2PAK Fault Protection: Current Limiting (Fixed), Over Temperature |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||||
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EVAL6EDL04I065PRTOBO1 | Infineon Technologies |
Description: EVAL6EDL04I065PRTOBO1 Packaging: Box |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||||
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BTG70013A1ESWDBTOBO1 | Infineon Technologies |
Description: BTG70013A-1ESW DB Packaging: Bulk Function: Switch Type: Power Management Contents: Board(s) Utilized IC / Part: BTG70013A-1ESW Platform: Arduino |
на замовлення 1 шт: термін постачання 21-31 дні (днів) |
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IAUCN04S7N040DATMA1 | Infineon Technologies |
Description: MOSFET_(20V 40V) Packaging: Tape & Reel (TR) |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||||
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IAUCN04S7N040DATMA1 | Infineon Technologies |
Description: MOSFET_(20V 40V) Packaging: Cut Tape (CT) |
на замовлення 497 шт: термін постачання 21-31 дні (днів) |
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CY7C1148KV18-400BZXC | Infineon Technologies |
Description: IC SRAM 18MBIT PARALLEL 165FBGA Packaging: Tray Package / Case: 165-LBGA Mounting Type: Surface Mount Memory Size: 18Mbit Memory Type: Volatile Operating Temperature: 0°C ~ 70°C (TA) Voltage - Supply: 1.7V ~ 1.9V Technology: SRAM - Synchronous, DDR II+ Clock Frequency: 400 MHz Memory Format: SRAM Supplier Device Package: 165-FBGA (13x15) Memory Interface: Parallel Memory Organization: 1M x 18 DigiKey Programmable: Not Verified |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||||
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IAUCN04S7L011ATMA1 | Infineon Technologies |
Description: MOSFET_(20V 40V) Packaging: Tape & Reel (TR) Package / Case: 8-PowerTDFN Mounting Type: Surface Mount Operating Temperature: -55°C ~ 175°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 222A (Tj) Rds On (Max) @ Id, Vgs: 1.13mOhm @ 60A, 10V Power Dissipation (Max): 105W (Tc) Vgs(th) (Max) @ Id: 1.8V @ 45µA Supplier Device Package: PG-TDSON-8-34 Grade: Automotive Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Vgs (Max): ±16V Drain to Source Voltage (Vdss): 40 V Gate Charge (Qg) (Max) @ Vgs: 64 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 4240 pF @ 20 V Qualification: AEC-Q101 |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||||
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IAUCN04S7L011ATMA1 | Infineon Technologies |
Description: MOSFET_(20V 40V) Packaging: Cut Tape (CT) Package / Case: 8-PowerTDFN Mounting Type: Surface Mount Operating Temperature: -55°C ~ 175°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 222A (Tj) Rds On (Max) @ Id, Vgs: 1.13mOhm @ 60A, 10V Power Dissipation (Max): 105W (Tc) Vgs(th) (Max) @ Id: 1.8V @ 45µA Supplier Device Package: PG-TDSON-8-34 Grade: Automotive Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Vgs (Max): ±16V Drain to Source Voltage (Vdss): 40 V Gate Charge (Qg) (Max) @ Vgs: 64 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 4240 pF @ 20 V Qualification: AEC-Q101 |
на замовлення 862 шт: термін постачання 21-31 дні (днів) |
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IQFH55N04NM6ATMA1 | Infineon Technologies |
Description: TRENCH <= 40V Packaging: Cut Tape (CT) Package / Case: 12-PowerTDFN Mounting Type: Surface Mount Operating Temperature: -55°C ~ 175°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 53A (Ta), 451A (Tc) Rds On (Max) @ Id, Vgs: 0.55mOhm @ 100A, 10V Power Dissipation (Max): 3W (Ta), 214W (Tc) Vgs(th) (Max) @ Id: 2.8V @ 1.05mA Supplier Device Package: PG-TSON-12-1 Drive Voltage (Max Rds On, Min Rds On): 6V, 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 40 V Gate Charge (Qg) (Max) @ Vgs: 177 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 11000 pF @ 20 V |
на замовлення 3000 шт: термін постачання 21-31 дні (днів) |
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| DF225R07W2S5PB97BPSA1 | Infineon Technologies |
Description: EASY STANDARD Packaging: Tray |
товару немає в наявності |
В кошику од. на суму грн. | |||||||||||
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CY9AF315NAPF-G-JNE1 | Infineon Technologies |
Description: IC MCU 32BIT 384KB FLASH 100QFP Packaging: Tray Package / Case: 100-BQFP Mounting Type: Surface Mount Speed: 40MHz Program Memory Size: 384KB (384K x 8) RAM Size: 32K x 8 Operating Temperature: -40°C ~ 105°C (TA) Oscillator Type: Internal Program Memory Type: FLASH Core Processor: ARM® Cortex®-M3 Data Converters: A/D 16x12b Core Size: 32-Bit Single-Core Voltage - Supply (Vcc/Vdd): 2.7V ~ 5.5V Connectivity: CSIO, EBI/EMI, I2C, LINbus, UART/USART, USB Peripherals: DMA, LVD, POR, PWM, WDT Supplier Device Package: 100-QFP (14x20) Number of I/O: 83 DigiKey Programmable: Not Verified |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||||
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IRLU3636PBF | Infineon Technologies |
Description: MOSFET N-CH 60V 50A IPAK Packaging: Tube Package / Case: TO-251-3 Short Leads, IPak, TO-251AA Mounting Type: Through Hole Operating Temperature: -55°C ~ 175°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 50A (Tc) Rds On (Max) @ Id, Vgs: 6.8mOhm @ 50A, 10V Power Dissipation (Max): 143W (Tc) Vgs(th) (Max) @ Id: 2.5V @ 100µA Supplier Device Package: IPAK Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Vgs (Max): ±16V Drain to Source Voltage (Vdss): 60 V Gate Charge (Qg) (Max) @ Vgs: 49 nC @ 4.5 V Input Capacitance (Ciss) (Max) @ Vds: 3779 pF @ 50 V |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||||
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CY62177GE30-55ZXIT | Infineon Technologies |
Description: IC SRAM 32MBIT PARALLEL 48TSOP I Packaging: Tape & Reel (TR) Package / Case: 48-TFSOP (0.724", 18.40mm Width) Mounting Type: Surface Mount Memory Size: 32Mbit Memory Type: Volatile Operating Temperature: -40°C ~ 85°C (TA) Voltage - Supply: 2.2V ~ 3.6V Technology: SRAM - Asynchronous Memory Format: SRAM Supplier Device Package: 48-TSOP I Write Cycle Time - Word, Page: 55ns Memory Interface: Parallel Access Time: 55 ns Memory Organization: 2M x 16 DigiKey Programmable: Not Verified |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||||
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CY62177GE30-55ZXI | Infineon Technologies |
Description: IC SRAM 32MBIT PARALLEL 48TSOP I Packaging: Tray Package / Case: 48-TFSOP (0.724", 18.40mm Width) Mounting Type: Surface Mount Memory Size: 32Mbit Memory Type: Volatile Operating Temperature: -40°C ~ 85°C (TA) Voltage - Supply: 2.2V ~ 3.6V Technology: SRAM - Asynchronous Memory Format: SRAM Supplier Device Package: 48-TSOP I Write Cycle Time - Word, Page: 55ns Memory Interface: Parallel Access Time: 55 ns Memory Organization: 2M x 16 DigiKey Programmable: Not Verified |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||||
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CY7C1370D-200BZC | Infineon Technologies |
Description: IC SRAM 18MBIT PARALLEL 165FBGA Packaging: Tray Package / Case: 165-LBGA Mounting Type: Surface Mount Memory Size: 18Mbit Memory Type: Volatile Operating Temperature: 0°C ~ 70°C (TA) Voltage - Supply: 3.135V ~ 3.6V Technology: SRAM - Synchronous, SDR Clock Frequency: 200 MHz Memory Format: SRAM Supplier Device Package: 165-FBGA (13x15) Memory Interface: Parallel Access Time: 3 ns Memory Organization: 512K x 36 DigiKey Programmable: Not Verified |
на замовлення 205 шт: термін постачання 21-31 дні (днів) |
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CY7C1354D-200BZC | Infineon Technologies |
Description: IC SRAM 9MBIT PARALLEL 165FBGA Packaging: Bulk Package / Case: 165-LBGA Mounting Type: Surface Mount Memory Size: 9Mbit Memory Type: Volatile Operating Temperature: 0°C ~ 70°C (TA) Voltage - Supply: 2.4V ~ 2.6V Technology: SRAM - Synchronous, SDR Clock Frequency: 200 MHz Memory Format: SRAM Supplier Device Package: 165-FBGA (13x15) Memory Interface: Parallel Access Time: 3.2 ns Memory Organization: 256K x 36 DigiKey Programmable: Not Verified |
на замовлення 57 шт: термін постачання 21-31 дні (днів) |
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CY7C1382D-200AXC | Infineon Technologies |
Description: IC SRAM 18MBIT PARALLEL 100TQFP Packaging: Tray Package / Case: 100-LQFP Mounting Type: Surface Mount Memory Size: 18Mbit Memory Type: Volatile Operating Temperature: 0°C ~ 70°C (TA) Voltage - Supply: 3.135V ~ 3.6V Technology: SRAM - Synchronous, SDR Clock Frequency: 200 MHz Memory Format: SRAM Supplier Device Package: 100-TQFP (14x20) Memory Interface: Parallel Access Time: 3 ns Memory Organization: 1M x 18 DigiKey Programmable: Not Verified |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||||
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CY7C1370D-200BGXC | Infineon Technologies |
Description: IC SRAM 18MBIT PARALLEL 119PBGA Packaging: Tray Package / Case: 119-BGA Mounting Type: Surface Mount Memory Size: 18Mbit Memory Type: Volatile Operating Temperature: 0°C ~ 70°C (TA) Voltage - Supply: 3.135V ~ 3.6V Technology: SRAM - Synchronous, SDR Clock Frequency: 200 MHz Memory Format: SRAM Supplier Device Package: 119-PBGA (14x22) Memory Interface: Parallel Access Time: 3 ns Memory Organization: 512K x 36 DigiKey Programmable: Not Verified |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||||
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CY7C1370D-200AXC | Infineon Technologies |
Description: IC SRAM 18MBIT PARALLEL 100TQFP Packaging: Tray Package / Case: 100-LQFP Mounting Type: Surface Mount Memory Size: 18Mbit Memory Type: Volatile Operating Temperature: 0°C ~ 70°C (TA) Voltage - Supply: 3.135V ~ 3.6V Technology: SRAM - Synchronous, SDR Clock Frequency: 200 MHz Memory Format: SRAM Supplier Device Package: 100-TQFP (14x20) Memory Interface: Parallel Access Time: 3 ns Memory Organization: 512K x 36 DigiKey Programmable: Not Verified |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||||
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FD200R12KE3PHOSA1 | Infineon Technologies |
Description: IGBT MODULE 1200V 200A Packaging: Tray Package / Case: Module Mounting Type: Chassis Mount Input: Standard Configuration: Single Operating Temperature: -40°C ~ 125°C Vce(on) (Max) @ Vge, Ic: 2.15V @ 15V, 200A NTC Thermistor: No Supplier Device Package: Module IGBT Type: Trench Field Stop Current - Collector (Ic) (Max): 200 A Voltage - Collector Emitter Breakdown (Max): 1200 V Current - Collector Cutoff (Max): 5 mA Input Capacitance (Cies) @ Vce: 14 nF @ 25 V |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||||
| D2000U65X122XPSA1 | Infineon Technologies |
Description: HIGH POWER THYR / DIO Packaging: Tray |
товару немає в наявності |
В кошику од. на суму грн. | |||||||||||
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BGT24ATR22E6433XUMA1 | Infineon Technologies |
Description: BGT24ATR22E6433XUMA1 Packaging: Tape & Reel (TR) Package / Case: 32-PowerVFQFN Mounting Type: Surface Mount Function: VCO Frequency: 24GHz ~ 24.25GHz RF Type: Radar Secondary Attributes: ADC Supplier Device Package: PG-VQFN-32-9 Grade: Automotive Qualification: AEC-Q100 |
товару немає в наявності |
В кошику од. на суму грн. |
| IRF150DM115XTMA1 |
|
Виробник: Infineon Technologies
Description: TRENCH >=100V DIRECTFET
Packaging: Cut Tape (CT)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Drain to Source Voltage (Vdss): 150 V
Description: TRENCH >=100V DIRECTFET
Packaging: Cut Tape (CT)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Drain to Source Voltage (Vdss): 150 V
товару немає в наявності
В кошику
од. на суму грн.
| IPTG025N15NM6ATMA1 |
|
Виробник: Infineon Technologies
Description: TRENCH >=100V
Packaging: Cut Tape (CT)
Package / Case: 8-PowerSMD, Gull Wing
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 26A (Ta), 264A (Tc)
Rds On (Max) @ Id, Vgs: 2.4mOhm @ 120A, 15V
Power Dissipation (Max): 3.8W (Ta), 395W (Tc)
Vgs(th) (Max) @ Id: 4V @ 275µA
Supplier Device Package: PG-HSOG-8-1
Drive Voltage (Max Rds On, Min Rds On): 8V, 15V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 150 V
Gate Charge (Qg) (Max) @ Vgs: 137 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 9800 pF @ 75 V
Description: TRENCH >=100V
Packaging: Cut Tape (CT)
Package / Case: 8-PowerSMD, Gull Wing
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 26A (Ta), 264A (Tc)
Rds On (Max) @ Id, Vgs: 2.4mOhm @ 120A, 15V
Power Dissipation (Max): 3.8W (Ta), 395W (Tc)
Vgs(th) (Max) @ Id: 4V @ 275µA
Supplier Device Package: PG-HSOG-8-1
Drive Voltage (Max Rds On, Min Rds On): 8V, 15V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 150 V
Gate Charge (Qg) (Max) @ Vgs: 137 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 9800 pF @ 75 V
товару немає в наявності
В кошику
од. на суму грн.
| IPTG025N15NM6ATMA1 |
|
Виробник: Infineon Technologies
Description: TRENCH >=100V
Packaging: Tape & Reel (TR)
Package / Case: 8-PowerSMD, Gull Wing
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 26A (Ta), 264A (Tc)
Rds On (Max) @ Id, Vgs: 2.4mOhm @ 120A, 15V
Power Dissipation (Max): 3.8W (Ta), 395W (Tc)
Vgs(th) (Max) @ Id: 4V @ 275µA
Supplier Device Package: PG-HSOG-8-1
Drive Voltage (Max Rds On, Min Rds On): 8V, 15V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 150 V
Gate Charge (Qg) (Max) @ Vgs: 137 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 9800 pF @ 75 V
Description: TRENCH >=100V
Packaging: Tape & Reel (TR)
Package / Case: 8-PowerSMD, Gull Wing
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 26A (Ta), 264A (Tc)
Rds On (Max) @ Id, Vgs: 2.4mOhm @ 120A, 15V
Power Dissipation (Max): 3.8W (Ta), 395W (Tc)
Vgs(th) (Max) @ Id: 4V @ 275µA
Supplier Device Package: PG-HSOG-8-1
Drive Voltage (Max Rds On, Min Rds On): 8V, 15V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 150 V
Gate Charge (Qg) (Max) @ Vgs: 137 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 9800 pF @ 75 V
товару немає в наявності
В кошику
од. на суму грн.
| IPB95R130PFD7ATMA1 |
|
Виробник: Infineon Technologies
Description: HIGH POWER_NEW
Packaging: Tape & Reel (TR)
Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 36.5A (Tc)
Rds On (Max) @ Id, Vgs: 130mOhm @ 25.1A, 10V
Power Dissipation (Max): 227W (Tc)
Vgs(th) (Max) @ Id: 3.5V @ 1.25mA
Supplier Device Package: PG-TO263-3-2
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 950 V
Gate Charge (Qg) (Max) @ Vgs: 141 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 4170 pF @ 400 V
Description: HIGH POWER_NEW
Packaging: Tape & Reel (TR)
Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 36.5A (Tc)
Rds On (Max) @ Id, Vgs: 130mOhm @ 25.1A, 10V
Power Dissipation (Max): 227W (Tc)
Vgs(th) (Max) @ Id: 3.5V @ 1.25mA
Supplier Device Package: PG-TO263-3-2
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 950 V
Gate Charge (Qg) (Max) @ Vgs: 141 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 4170 pF @ 400 V
на замовлення 1000 шт:
термін постачання 21-31 дні (днів)| Кількість | Ціна |
|---|---|
| 1000+ | 247.13 грн |
| IPB95R130PFD7ATMA1 |
|
Виробник: Infineon Technologies
Description: HIGH POWER_NEW
Packaging: Cut Tape (CT)
Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 36.5A (Tc)
Rds On (Max) @ Id, Vgs: 130mOhm @ 25.1A, 10V
Power Dissipation (Max): 227W (Tc)
Vgs(th) (Max) @ Id: 3.5V @ 1.25mA
Supplier Device Package: PG-TO263-3-2
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 950 V
Gate Charge (Qg) (Max) @ Vgs: 141 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 4170 pF @ 400 V
Description: HIGH POWER_NEW
Packaging: Cut Tape (CT)
Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 36.5A (Tc)
Rds On (Max) @ Id, Vgs: 130mOhm @ 25.1A, 10V
Power Dissipation (Max): 227W (Tc)
Vgs(th) (Max) @ Id: 3.5V @ 1.25mA
Supplier Device Package: PG-TO263-3-2
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 950 V
Gate Charge (Qg) (Max) @ Vgs: 141 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 4170 pF @ 400 V
на замовлення 1678 шт:
термін постачання 21-31 дні (днів)| Кількість | Ціна |
|---|---|
| 1+ | 562.64 грн |
| 10+ | 368.22 грн |
| 100+ | 269.81 грн |
| 500+ | 223.33 грн |
| CG8354AF |
Виробник: Infineon Technologies
Description: IC USB PERIPHERAL HS 56QFN
Packaging: Tray
DigiKey Programmable: Not Verified
Description: IC USB PERIPHERAL HS 56QFN
Packaging: Tray
DigiKey Programmable: Not Verified
на замовлення 2388 шт:
термін постачання 21-31 дні (днів)| Кількість | Ціна |
|---|---|
| 65+ | 333.81 грн |
| CG8354AF |
Виробник: Infineon Technologies
Description: IC USB PERIPHERAL HS 56QFN
Packaging: Tray
DigiKey Programmable: Not Verified
Description: IC USB PERIPHERAL HS 56QFN
Packaging: Tray
DigiKey Programmable: Not Verified
товару немає в наявності
В кошику
од. на суму грн.
| CG8352AF |
Виробник: Infineon Technologies
Description: IC USB PERIPHERAL HS 56QFN
Packaging: Tray
DigiKey Programmable: Not Verified
Description: IC USB PERIPHERAL HS 56QFN
Packaging: Tray
DigiKey Programmable: Not Verified
товару немає в наявності
В кошику
од. на суму грн.
| TLD609812BEVALTOBO1 |
Виробник: Infineon Technologies
Description: EVAL BOARD FOR TLD6098-1EP
Features: Dimmable
Packaging: Bulk
Voltage - Input: 8V ~ 27V
Contents: Board(s)
Current - Output / Channel: 1A
Utilized IC / Part: TLD6098-1EP
Supplied Contents: Board(s)
Outputs and Type: 1 Non-Isolated Output
Description: EVAL BOARD FOR TLD6098-1EP
Features: Dimmable
Packaging: Bulk
Voltage - Input: 8V ~ 27V
Contents: Board(s)
Current - Output / Channel: 1A
Utilized IC / Part: TLD6098-1EP
Supplied Contents: Board(s)
Outputs and Type: 1 Non-Isolated Output
на замовлення 2 шт:
термін постачання 21-31 дні (днів)| Кількість | Ціна |
|---|---|
| 1+ | 10414.76 грн |
| IR3865MTRPBF |
|
Виробник: Infineon Technologies
Description: IC REG BUCK ADJ 10A 17PWRQFN
Packaging: Tape & Reel (TR)
Package / Case: 17-PowerVQFN
Output Type: Adjustable
Mounting Type: Surface Mount
Number of Outputs: 1
Function: Step-Down
Current - Output: 10A
Operating Temperature: -40°C ~ 125°C (TJ)
Output Configuration: Positive
Frequency - Switching: Up to 750kHz
Voltage - Input (Max): 21V
Topology: Buck
Supplier Device Package: 17-PowerQFN (4x5)
Synchronous Rectifier: Yes
Voltage - Output (Max): 12V
Voltage - Input (Min): 3V
Voltage - Output (Min/Fixed): 0.5V
Description: IC REG BUCK ADJ 10A 17PWRQFN
Packaging: Tape & Reel (TR)
Package / Case: 17-PowerVQFN
Output Type: Adjustable
Mounting Type: Surface Mount
Number of Outputs: 1
Function: Step-Down
Current - Output: 10A
Operating Temperature: -40°C ~ 125°C (TJ)
Output Configuration: Positive
Frequency - Switching: Up to 750kHz
Voltage - Input (Max): 21V
Topology: Buck
Supplier Device Package: 17-PowerQFN (4x5)
Synchronous Rectifier: Yes
Voltage - Output (Max): 12V
Voltage - Input (Min): 3V
Voltage - Output (Min/Fixed): 0.5V
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| TDA19988BHN/C1,551 |
|
на замовлення 240 шт:
термін постачання 21-31 дні (днів)| Кількість | Ціна |
|---|---|
| 90+ | 238.74 грн |
| SGB15N60HSATMA1 |
|
Виробник: Infineon Technologies
Description: IGBT NPT 600V 27A TO263-3-2
Packaging: Tape & Reel (TR)
Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Input Type: Standard
Vce(on) (Max) @ Vge, Ic: 3.15V @ 15V, 15A
Supplier Device Package: PG-TO263-3-2
IGBT Type: NPT
Td (on/off) @ 25°C: 13ns/209ns
Switching Energy: 530µJ
Test Condition: 400V, 15A, 23Ohm, 15V
Gate Charge: 80 nC
Current - Collector (Ic) (Max): 27 A
Voltage - Collector Emitter Breakdown (Max): 600 V
Current - Collector Pulsed (Icm): 60 A
Power - Max: 138 W
Description: IGBT NPT 600V 27A TO263-3-2
Packaging: Tape & Reel (TR)
Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Input Type: Standard
Vce(on) (Max) @ Vge, Ic: 3.15V @ 15V, 15A
Supplier Device Package: PG-TO263-3-2
IGBT Type: NPT
Td (on/off) @ 25°C: 13ns/209ns
Switching Energy: 530µJ
Test Condition: 400V, 15A, 23Ohm, 15V
Gate Charge: 80 nC
Current - Collector (Ic) (Max): 27 A
Voltage - Collector Emitter Breakdown (Max): 600 V
Current - Collector Pulsed (Icm): 60 A
Power - Max: 138 W
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| AIMZH120R040M1TXKSA1 |
|
Виробник: Infineon Technologies
Description: SIC_DISCRETE
Packaging: Tube
Package / Case: TO-247-4
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: SiCFET (Silicon Carbide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 55A (Tc)
Rds On (Max) @ Id, Vgs: 50mOhm @ 20A, 20V
Power Dissipation (Max): 268W (Tc)
Vgs(th) (Max) @ Id: 5.1V @ 6.4mA
Supplier Device Package: PG-TO247-4-11
Grade: Automotive
Drive Voltage (Max Rds On, Min Rds On): 18V, 20V
Vgs (Max): +23V, -5V
Drain to Source Voltage (Vdss): 1200 V
Gate Charge (Qg) (Max) @ Vgs: 43 nC @ 20 V
Input Capacitance (Ciss) (Max) @ Vds: 1264 pF @ 800 V
Qualification: AEC-Q101
Description: SIC_DISCRETE
Packaging: Tube
Package / Case: TO-247-4
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: SiCFET (Silicon Carbide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 55A (Tc)
Rds On (Max) @ Id, Vgs: 50mOhm @ 20A, 20V
Power Dissipation (Max): 268W (Tc)
Vgs(th) (Max) @ Id: 5.1V @ 6.4mA
Supplier Device Package: PG-TO247-4-11
Grade: Automotive
Drive Voltage (Max Rds On, Min Rds On): 18V, 20V
Vgs (Max): +23V, -5V
Drain to Source Voltage (Vdss): 1200 V
Gate Charge (Qg) (Max) @ Vgs: 43 nC @ 20 V
Input Capacitance (Ciss) (Max) @ Vds: 1264 pF @ 800 V
Qualification: AEC-Q101
на замовлення 216 шт:
термін постачання 21-31 дні (днів)| Кількість | Ціна |
|---|---|
| 1+ | 1232.71 грн |
| 10+ | 877.99 грн |
| BTS721L1 |
|
Виробник: Infineon Technologies
Description: IC PWR SWITCH N-CHAN 1:1 PDSO-20
Features: Auto Restart, Status Flag
Packaging: Tape & Reel (TR)
Package / Case: 20-SOIC (0.295", 7.50mm Width)
Output Type: N-Channel
Mounting Type: Surface Mount
Number of Outputs: 4
Interface: On/Off
Switch Type: General Purpose
Operating Temperature: -40°C ~ 150°C (TJ)
Output Configuration: High Side
Rds On (Typ): 85mOhm
Input Type: Non-Inverting
Voltage - Load: 5V ~ 34V
Voltage - Supply (Vcc/Vdd): Not Required
Current - Output (Max): 2.5A
Ratio - Input:Output: 1:1
Supplier Device Package: PG-DSO-20
Fault Protection: Current Limiting (Fixed), Open Load Detect, Over Temperature, Over Voltage
Grade: Automotive
Qualification: AEC-Q100
Description: IC PWR SWITCH N-CHAN 1:1 PDSO-20
Features: Auto Restart, Status Flag
Packaging: Tape & Reel (TR)
Package / Case: 20-SOIC (0.295", 7.50mm Width)
Output Type: N-Channel
Mounting Type: Surface Mount
Number of Outputs: 4
Interface: On/Off
Switch Type: General Purpose
Operating Temperature: -40°C ~ 150°C (TJ)
Output Configuration: High Side
Rds On (Typ): 85mOhm
Input Type: Non-Inverting
Voltage - Load: 5V ~ 34V
Voltage - Supply (Vcc/Vdd): Not Required
Current - Output (Max): 2.5A
Ratio - Input:Output: 1:1
Supplier Device Package: PG-DSO-20
Fault Protection: Current Limiting (Fixed), Open Load Detect, Over Temperature, Over Voltage
Grade: Automotive
Qualification: AEC-Q100
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| DD600N12KHPSA2 |
|
Виробник: Infineon Technologies
Description: DIODE MODULE GP 1.2KV 600A
Packaging: Tray
Package / Case: Module
Mounting Type: Chassis Mount
Speed: Standard Recovery >500ns, > 200mA (Io)
Technology: Standard
Diode Configuration: 1 Pair Series Connection
Current - Average Rectified (Io) (per Diode): 600A
Supplier Device Package: Module
Operating Temperature - Junction: -40°C ~ 150°C
Voltage - DC Reverse (Vr) (Max): 1200 V
Voltage - Forward (Vf) (Max) @ If: 1.32 V @ 1800 A
Current - Reverse Leakage @ Vr: 40 mA @ 1200 V
Description: DIODE MODULE GP 1.2KV 600A
Packaging: Tray
Package / Case: Module
Mounting Type: Chassis Mount
Speed: Standard Recovery >500ns, > 200mA (Io)
Technology: Standard
Diode Configuration: 1 Pair Series Connection
Current - Average Rectified (Io) (per Diode): 600A
Supplier Device Package: Module
Operating Temperature - Junction: -40°C ~ 150°C
Voltage - DC Reverse (Vr) (Max): 1200 V
Voltage - Forward (Vf) (Max) @ If: 1.32 V @ 1800 A
Current - Reverse Leakage @ Vr: 40 mA @ 1200 V
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| CYW55511IUBGTXTMA1 |
|
Виробник: Infineon Technologies
Description: WI-FI COMBO IOT
Packaging: Tape & Reel (TR)
Package / Case: 143-BGA, WLBGA
Sensitivity: -105.5dBm
Mounting Type: Surface Mount
Memory Size: 3.6MB ROM, 1.7MB SRAM
Type: TxRx + MCU
Operating Temperature: -40°C ~ 85°C
Voltage - Supply: 3V ~ 4.8V
Power - Output: 19dBm
Protocol: Bluetooth v5.4
Data Rate (Max): 2Mbps
Supplier Device Package: SG-XFWLB-143
GPIO: 39
Modulation: OFDM
RF Family/Standard: 802.15.4
Serial Interfaces: I2C, SDIO, SPI, UART
Description: WI-FI COMBO IOT
Packaging: Tape & Reel (TR)
Package / Case: 143-BGA, WLBGA
Sensitivity: -105.5dBm
Mounting Type: Surface Mount
Memory Size: 3.6MB ROM, 1.7MB SRAM
Type: TxRx + MCU
Operating Temperature: -40°C ~ 85°C
Voltage - Supply: 3V ~ 4.8V
Power - Output: 19dBm
Protocol: Bluetooth v5.4
Data Rate (Max): 2Mbps
Supplier Device Package: SG-XFWLB-143
GPIO: 39
Modulation: OFDM
RF Family/Standard: 802.15.4
Serial Interfaces: I2C, SDIO, SPI, UART
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| CYW55512IUBGTXTMA1 |
|
Виробник: Infineon Technologies
Description: WI-FI COMBO IOT
Packaging: Tape & Reel (TR)
Package / Case: 143-BGA, WLBGA
Sensitivity: -105.5dBm
Mounting Type: Surface Mount
Frequency: 2.4GHz ~ 5GHz
Memory Size: 3.6MB ROM, 1.7MB SRAM
Type: TxRx + MCU
Operating Temperature: -40°C ~ 85°C
Voltage - Supply: 3V ~ 4.8V
Power - Output: 19dBm
Protocol: Bluetooth v5.4
Data Rate (Max): 2Mbps
Supplier Device Package: SG-XFWLB-143
GPIO: 39
Modulation: OFDM
RF Family/Standard: 802.15.4
Serial Interfaces: I2C, SDIO, SPI, UART
Description: WI-FI COMBO IOT
Packaging: Tape & Reel (TR)
Package / Case: 143-BGA, WLBGA
Sensitivity: -105.5dBm
Mounting Type: Surface Mount
Frequency: 2.4GHz ~ 5GHz
Memory Size: 3.6MB ROM, 1.7MB SRAM
Type: TxRx + MCU
Operating Temperature: -40°C ~ 85°C
Voltage - Supply: 3V ~ 4.8V
Power - Output: 19dBm
Protocol: Bluetooth v5.4
Data Rate (Max): 2Mbps
Supplier Device Package: SG-XFWLB-143
GPIO: 39
Modulation: OFDM
RF Family/Standard: 802.15.4
Serial Interfaces: I2C, SDIO, SPI, UART
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| CYW55513IUBGT |
|
Виробник: Infineon Technologies
Description: WI-FI COMBO IOT
Packaging: Tape & Reel (TR)
Package / Case: 143-BGA, WLBGA
Sensitivity: -105.5dBm
Mounting Type: Surface Mount
Frequency: 2.4GHz ~ 6GHz
Memory Size: 3.6MB ROM, 1.7MB SRAM
Type: TxRx + MCU
Operating Temperature: -40°C ~ 85°C
Voltage - Supply: 3V ~ 4.8V
Power - Output: 19dBm
Protocol: Bluetooth v5.4
Data Rate (Max): 2Mbps
Supplier Device Package: SG-XFWLB-143
GPIO: 39
Modulation: OFDM
RF Family/Standard: 802.15.4
Serial Interfaces: I2C, SDIO, SPI, UART
Description: WI-FI COMBO IOT
Packaging: Tape & Reel (TR)
Package / Case: 143-BGA, WLBGA
Sensitivity: -105.5dBm
Mounting Type: Surface Mount
Frequency: 2.4GHz ~ 6GHz
Memory Size: 3.6MB ROM, 1.7MB SRAM
Type: TxRx + MCU
Operating Temperature: -40°C ~ 85°C
Voltage - Supply: 3V ~ 4.8V
Power - Output: 19dBm
Protocol: Bluetooth v5.4
Data Rate (Max): 2Mbps
Supplier Device Package: SG-XFWLB-143
GPIO: 39
Modulation: OFDM
RF Family/Standard: 802.15.4
Serial Interfaces: I2C, SDIO, SPI, UART
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| CY8C3666AXI-036 |
|
Виробник: Infineon Technologies
Description: IC MCU 8BIT 64KB FLASH 100TQFP
Packaging: Tray
Package / Case: 100-LQFP
Mounting Type: Surface Mount
Speed: 67MHz
Program Memory Size: 64KB (64K x 8)
RAM Size: 8K x 8
Operating Temperature: -40°C ~ 85°C (TA)
Oscillator Type: Internal
Program Memory Type: FLASH
EEPROM Size: 2K x 8
Core Processor: 8051
Data Converters: A/D 16x12b; D/A 4x8b
Core Size: 8-Bit
Voltage - Supply (Vcc/Vdd): 1.71V ~ 5.5V
Connectivity: EBI/EMI, I2C, LINbus, SPI, UART/USART, USB
Peripherals: CapSense, DMA, LCD, POR, PWM, WDT
Supplier Device Package: 100-TQFP (14x14)
Number of I/O: 62
DigiKey Programmable: Not Verified
Description: IC MCU 8BIT 64KB FLASH 100TQFP
Packaging: Tray
Package / Case: 100-LQFP
Mounting Type: Surface Mount
Speed: 67MHz
Program Memory Size: 64KB (64K x 8)
RAM Size: 8K x 8
Operating Temperature: -40°C ~ 85°C (TA)
Oscillator Type: Internal
Program Memory Type: FLASH
EEPROM Size: 2K x 8
Core Processor: 8051
Data Converters: A/D 16x12b; D/A 4x8b
Core Size: 8-Bit
Voltage - Supply (Vcc/Vdd): 1.71V ~ 5.5V
Connectivity: EBI/EMI, I2C, LINbus, SPI, UART/USART, USB
Peripherals: CapSense, DMA, LCD, POR, PWM, WDT
Supplier Device Package: 100-TQFP (14x14)
Number of I/O: 62
DigiKey Programmable: Not Verified
на замовлення 315 шт:
термін постачання 21-31 дні (днів)| Кількість | Ціна |
|---|---|
| 1+ | 1239.87 грн |
| 10+ | 1097.55 грн |
| 25+ | 1052.06 грн |
| 90+ | 869.91 грн |
| 270+ | 827.21 грн |
| CY8C3666LTI-201T |
|
Виробник: Infineon Technologies
Description: IC MCU 8BIT 64KB FLASH 68QFN
Packaging: Tape & Reel (TR)
Package / Case: 68-VFQFN Exposed Pad
Mounting Type: Surface Mount
Speed: 67MHz
Program Memory Size: 64KB (64K x 8)
RAM Size: 8K x 8
Operating Temperature: -40°C ~ 85°C (TA)
Oscillator Type: Internal
Program Memory Type: FLASH
EEPROM Size: 2K x 8
Core Processor: 8051
Data Converters: A/D 16x12b; D/A 2x8b
Core Size: 8-Bit
Voltage - Supply (Vcc/Vdd): 1.71V ~ 5.5V
Connectivity: EBI/EMI, I2C, LINbus, SPI, UART/USART
Peripherals: CapSense, DMA, LCD, POR, PWM, WDT
Supplier Device Package: 68-QFN (8x8)
Number of I/O: 38
DigiKey Programmable: Not Verified
Description: IC MCU 8BIT 64KB FLASH 68QFN
Packaging: Tape & Reel (TR)
Package / Case: 68-VFQFN Exposed Pad
Mounting Type: Surface Mount
Speed: 67MHz
Program Memory Size: 64KB (64K x 8)
RAM Size: 8K x 8
Operating Temperature: -40°C ~ 85°C (TA)
Oscillator Type: Internal
Program Memory Type: FLASH
EEPROM Size: 2K x 8
Core Processor: 8051
Data Converters: A/D 16x12b; D/A 2x8b
Core Size: 8-Bit
Voltage - Supply (Vcc/Vdd): 1.71V ~ 5.5V
Connectivity: EBI/EMI, I2C, LINbus, SPI, UART/USART
Peripherals: CapSense, DMA, LCD, POR, PWM, WDT
Supplier Device Package: 68-QFN (8x8)
Number of I/O: 38
DigiKey Programmable: Not Verified
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| CY8C3665LTI-044T |
|
Виробник: Infineon Technologies
Description: IC MCU 8BIT 32KB FLASH 68QFN
Packaging: Tape & Reel (TR)
Package / Case: 68-VFQFN Exposed Pad
Mounting Type: Surface Mount
Speed: 67MHz
Program Memory Size: 32KB (32K x 8)
RAM Size: 4K x 8
Operating Temperature: -40°C ~ 85°C (TA)
Oscillator Type: Internal
Program Memory Type: FLASH
EEPROM Size: 1K x 8
Core Processor: 8051
Data Converters: A/D 16x12b; D/A 4x8b
Core Size: 8-Bit
Voltage - Supply (Vcc/Vdd): 1.71V ~ 5.5V
Connectivity: EBI/EMI, I2C, LINbus, SPI, UART/USART, USB
Peripherals: CapSense, DMA, POR, PWM, WDT
Supplier Device Package: 68-QFN (8x8)
Number of I/O: 38
DigiKey Programmable: Not Verified
Description: IC MCU 8BIT 32KB FLASH 68QFN
Packaging: Tape & Reel (TR)
Package / Case: 68-VFQFN Exposed Pad
Mounting Type: Surface Mount
Speed: 67MHz
Program Memory Size: 32KB (32K x 8)
RAM Size: 4K x 8
Operating Temperature: -40°C ~ 85°C (TA)
Oscillator Type: Internal
Program Memory Type: FLASH
EEPROM Size: 1K x 8
Core Processor: 8051
Data Converters: A/D 16x12b; D/A 4x8b
Core Size: 8-Bit
Voltage - Supply (Vcc/Vdd): 1.71V ~ 5.5V
Connectivity: EBI/EMI, I2C, LINbus, SPI, UART/USART, USB
Peripherals: CapSense, DMA, POR, PWM, WDT
Supplier Device Package: 68-QFN (8x8)
Number of I/O: 38
DigiKey Programmable: Not Verified
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| CY8C3666LTI-203T |
|
Виробник: Infineon Technologies
Description: IC MCU 8BIT 64KB FLASH 68QFN
Packaging: Tape & Reel (TR)
Package / Case: 68-VFQFN Exposed Pad
Mounting Type: Surface Mount
Speed: 67MHz
Program Memory Size: 64KB (64K x 8)
RAM Size: 8K x 8
Operating Temperature: -40°C ~ 85°C (TA)
Oscillator Type: Internal
Program Memory Type: FLASH
EEPROM Size: 2K x 8
Core Processor: 8051
Data Converters: A/D 16x12b; D/A 4x8b
Core Size: 8-Bit
Voltage - Supply (Vcc/Vdd): 1.71V ~ 5.5V
Connectivity: EBI/EMI, I2C, LINbus, SPI, UART/USART
Peripherals: CapSense, DMA, LCD, POR, PWM, WDT
Supplier Device Package: 68-QFN (8x8)
Number of I/O: 38
DigiKey Programmable: Not Verified
Description: IC MCU 8BIT 64KB FLASH 68QFN
Packaging: Tape & Reel (TR)
Package / Case: 68-VFQFN Exposed Pad
Mounting Type: Surface Mount
Speed: 67MHz
Program Memory Size: 64KB (64K x 8)
RAM Size: 8K x 8
Operating Temperature: -40°C ~ 85°C (TA)
Oscillator Type: Internal
Program Memory Type: FLASH
EEPROM Size: 2K x 8
Core Processor: 8051
Data Converters: A/D 16x12b; D/A 4x8b
Core Size: 8-Bit
Voltage - Supply (Vcc/Vdd): 1.71V ~ 5.5V
Connectivity: EBI/EMI, I2C, LINbus, SPI, UART/USART
Peripherals: CapSense, DMA, LCD, POR, PWM, WDT
Supplier Device Package: 68-QFN (8x8)
Number of I/O: 38
DigiKey Programmable: Not Verified
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| CY8C3666AXI-037T |
|
Виробник: Infineon Technologies
Description: IC MCU 8BIT 64KB FLASH 100TQFP
Packaging: Tape & Reel (TR)
Package / Case: 100-LQFP
Mounting Type: Surface Mount
Speed: 67MHz
Program Memory Size: 64KB (64K x 8)
RAM Size: 8K x 8
Operating Temperature: -40°C ~ 85°C (TA)
Oscillator Type: Internal
Program Memory Type: FLASH
EEPROM Size: 2K x 8
Core Processor: 8051
Data Converters: A/D 16x12b; D/A 4x8b
Core Size: 8-Bit
Voltage - Supply (Vcc/Vdd): 1.71V ~ 5.5V
Connectivity: CANbus, EBI/EMI, I2C, LINbus, SPI, UART/USART
Peripherals: CapSense, DMA, LCD, POR, PWM, WDT
Supplier Device Package: 100-TQFP (14x14)
Number of I/O: 62
DigiKey Programmable: Not Verified
Description: IC MCU 8BIT 64KB FLASH 100TQFP
Packaging: Tape & Reel (TR)
Package / Case: 100-LQFP
Mounting Type: Surface Mount
Speed: 67MHz
Program Memory Size: 64KB (64K x 8)
RAM Size: 8K x 8
Operating Temperature: -40°C ~ 85°C (TA)
Oscillator Type: Internal
Program Memory Type: FLASH
EEPROM Size: 2K x 8
Core Processor: 8051
Data Converters: A/D 16x12b; D/A 4x8b
Core Size: 8-Bit
Voltage - Supply (Vcc/Vdd): 1.71V ~ 5.5V
Connectivity: CANbus, EBI/EMI, I2C, LINbus, SPI, UART/USART
Peripherals: CapSense, DMA, LCD, POR, PWM, WDT
Supplier Device Package: 100-TQFP (14x14)
Number of I/O: 62
DigiKey Programmable: Not Verified
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| CY8C3666LTI-050T |
|
Виробник: Infineon Technologies
Description: IC MCU 8BIT 64KB FLASH 48QFN
Packaging: Tape & Reel (TR)
Package / Case: 48-VFQFN Exposed Pad
Mounting Type: Surface Mount
Speed: 67MHz
Program Memory Size: 64KB (64K x 8)
RAM Size: 8K x 8
Operating Temperature: -40°C ~ 85°C (TA)
Oscillator Type: Internal
Program Memory Type: FLASH
EEPROM Size: 2K x 8
Core Processor: 8051
Data Converters: A/D 16x12b; D/A 4x8b
Core Size: 8-Bit
Voltage - Supply (Vcc/Vdd): 1.71V ~ 5.5V
Connectivity: EBI/EMI, I2C, LINbus, SPI, UART/USART, USB
Peripherals: CapSense, DMA, LCD, POR, PWM, WDT
Supplier Device Package: 48-QFN (7x7)
Number of I/O: 25
DigiKey Programmable: Not Verified
Description: IC MCU 8BIT 64KB FLASH 48QFN
Packaging: Tape & Reel (TR)
Package / Case: 48-VFQFN Exposed Pad
Mounting Type: Surface Mount
Speed: 67MHz
Program Memory Size: 64KB (64K x 8)
RAM Size: 8K x 8
Operating Temperature: -40°C ~ 85°C (TA)
Oscillator Type: Internal
Program Memory Type: FLASH
EEPROM Size: 2K x 8
Core Processor: 8051
Data Converters: A/D 16x12b; D/A 4x8b
Core Size: 8-Bit
Voltage - Supply (Vcc/Vdd): 1.71V ~ 5.5V
Connectivity: EBI/EMI, I2C, LINbus, SPI, UART/USART, USB
Peripherals: CapSense, DMA, LCD, POR, PWM, WDT
Supplier Device Package: 48-QFN (7x7)
Number of I/O: 25
DigiKey Programmable: Not Verified
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| CY8C3865LTI-014T |
|
Виробник: Infineon Technologies
Description: IC MCU 8BIT 32KB FLASH 68QFN
Packaging: Tape & Reel (TR)
Package / Case: 68-VFQFN Exposed Pad
Mounting Type: Surface Mount
Speed: 67MHz
Program Memory Size: 32KB (32K x 8)
RAM Size: 4K x 8
Operating Temperature: -40°C ~ 85°C (TA)
Oscillator Type: Internal
Program Memory Type: FLASH
EEPROM Size: 1K x 8
Core Processor: 8051
Data Converters: A/D 16x20b; D/A 4x8b
Core Size: 8-Bit
Voltage - Supply (Vcc/Vdd): 1.71V ~ 5.5V
Connectivity: EBI/EMI, I2C, LINbus, SPI, UART/USART, USB
Peripherals: CapSense, DMA, LCD, POR, PWM, WDT
Supplier Device Package: 68-QFN (8x8)
Number of I/O: 38
DigiKey Programmable: Not Verified
Description: IC MCU 8BIT 32KB FLASH 68QFN
Packaging: Tape & Reel (TR)
Package / Case: 68-VFQFN Exposed Pad
Mounting Type: Surface Mount
Speed: 67MHz
Program Memory Size: 32KB (32K x 8)
RAM Size: 4K x 8
Operating Temperature: -40°C ~ 85°C (TA)
Oscillator Type: Internal
Program Memory Type: FLASH
EEPROM Size: 1K x 8
Core Processor: 8051
Data Converters: A/D 16x20b; D/A 4x8b
Core Size: 8-Bit
Voltage - Supply (Vcc/Vdd): 1.71V ~ 5.5V
Connectivity: EBI/EMI, I2C, LINbus, SPI, UART/USART, USB
Peripherals: CapSense, DMA, LCD, POR, PWM, WDT
Supplier Device Package: 68-QFN (8x8)
Number of I/O: 38
DigiKey Programmable: Not Verified
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| CY8C3666LTI-027T |
|
Виробник: Infineon Technologies
Description: IC MCU 8BIT 64KB FLASH 68QFN
Packaging: Tape & Reel (TR)
Package / Case: 68-VFQFN Exposed Pad
Mounting Type: Surface Mount
Speed: 67MHz
Program Memory Size: 64KB (64K x 8)
RAM Size: 8K x 8
Operating Temperature: -40°C ~ 85°C (TA)
Oscillator Type: Internal
Program Memory Type: FLASH
EEPROM Size: 2K x 8
Core Processor: 8051
Data Converters: A/D 16x12b; D/A 4x8b
Core Size: 8-Bit
Voltage - Supply (Vcc/Vdd): 1.71V ~ 5.5V
Connectivity: EBI/EMI, I2C, LINbus, SPI, UART/USART, USB
Peripherals: CapSense, DMA, LCD, POR, PWM, WDT
Supplier Device Package: 68-QFN (8x8)
Number of I/O: 38
DigiKey Programmable: Not Verified
Description: IC MCU 8BIT 64KB FLASH 68QFN
Packaging: Tape & Reel (TR)
Package / Case: 68-VFQFN Exposed Pad
Mounting Type: Surface Mount
Speed: 67MHz
Program Memory Size: 64KB (64K x 8)
RAM Size: 8K x 8
Operating Temperature: -40°C ~ 85°C (TA)
Oscillator Type: Internal
Program Memory Type: FLASH
EEPROM Size: 2K x 8
Core Processor: 8051
Data Converters: A/D 16x12b; D/A 4x8b
Core Size: 8-Bit
Voltage - Supply (Vcc/Vdd): 1.71V ~ 5.5V
Connectivity: EBI/EMI, I2C, LINbus, SPI, UART/USART, USB
Peripherals: CapSense, DMA, LCD, POR, PWM, WDT
Supplier Device Package: 68-QFN (8x8)
Number of I/O: 38
DigiKey Programmable: Not Verified
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| CY8C3865AXI-019T |
|
Виробник: Infineon Technologies
Description: IC MCU 8BIT 32KB FLASH 100TQFP
Packaging: Tape & Reel (TR)
Package / Case: 100-LQFP
Mounting Type: Surface Mount
Speed: 67MHz
Program Memory Size: 32KB (32K x 8)
RAM Size: 4K x 8
Operating Temperature: -40°C ~ 85°C (TA)
Oscillator Type: Internal
Program Memory Type: FLASH
EEPROM Size: 1K x 8
Core Processor: 8051
Data Converters: A/D 16x20b; D/A 4x8b
Core Size: 8-Bit
Voltage - Supply (Vcc/Vdd): 1.71V ~ 5.5V
Connectivity: EBI/EMI, I2C, LINbus, SPI, UART/USART, USB
Peripherals: CapSense, DMA, LCD, POR, PWM, WDT
Supplier Device Package: 100-TQFP (14x14)
Number of I/O: 62
DigiKey Programmable: Not Verified
Description: IC MCU 8BIT 32KB FLASH 100TQFP
Packaging: Tape & Reel (TR)
Package / Case: 100-LQFP
Mounting Type: Surface Mount
Speed: 67MHz
Program Memory Size: 32KB (32K x 8)
RAM Size: 4K x 8
Operating Temperature: -40°C ~ 85°C (TA)
Oscillator Type: Internal
Program Memory Type: FLASH
EEPROM Size: 1K x 8
Core Processor: 8051
Data Converters: A/D 16x20b; D/A 4x8b
Core Size: 8-Bit
Voltage - Supply (Vcc/Vdd): 1.71V ~ 5.5V
Connectivity: EBI/EMI, I2C, LINbus, SPI, UART/USART, USB
Peripherals: CapSense, DMA, LCD, POR, PWM, WDT
Supplier Device Package: 100-TQFP (14x14)
Number of I/O: 62
DigiKey Programmable: Not Verified
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| CY8C3865LTI-014 |
|
Виробник: Infineon Technologies
Description: IC MCU 8BIT 32KB FLASH 68QFN
Packaging: Tray
Package / Case: 68-VFQFN Exposed Pad
Mounting Type: Surface Mount
Speed: 67MHz
Program Memory Size: 32KB (32K x 8)
RAM Size: 4K x 8
Operating Temperature: -40°C ~ 85°C (TA)
Oscillator Type: Internal
Program Memory Type: FLASH
EEPROM Size: 1K x 8
Core Processor: 8051
Data Converters: A/D 16x20b; D/A 4x8b
Core Size: 8-Bit
Voltage - Supply (Vcc/Vdd): 1.71V ~ 5.5V
Connectivity: EBI/EMI, I2C, LINbus, SPI, UART/USART, USB
Peripherals: CapSense, DMA, LCD, POR, PWM, WDT
Supplier Device Package: 68-QFN (8x8)
Number of I/O: 38
DigiKey Programmable: Not Verified
Description: IC MCU 8BIT 32KB FLASH 68QFN
Packaging: Tray
Package / Case: 68-VFQFN Exposed Pad
Mounting Type: Surface Mount
Speed: 67MHz
Program Memory Size: 32KB (32K x 8)
RAM Size: 4K x 8
Operating Temperature: -40°C ~ 85°C (TA)
Oscillator Type: Internal
Program Memory Type: FLASH
EEPROM Size: 1K x 8
Core Processor: 8051
Data Converters: A/D 16x20b; D/A 4x8b
Core Size: 8-Bit
Voltage - Supply (Vcc/Vdd): 1.71V ~ 5.5V
Connectivity: EBI/EMI, I2C, LINbus, SPI, UART/USART, USB
Peripherals: CapSense, DMA, LCD, POR, PWM, WDT
Supplier Device Package: 68-QFN (8x8)
Number of I/O: 38
DigiKey Programmable: Not Verified
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| IRFZ44VPBF |
|
Виробник: Infineon Technologies
Description: MOSFET N-CH 60V 55A TO220AB
Packaging: Tube
Package / Case: TO-220-3
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 55A (Tc)
Rds On (Max) @ Id, Vgs: 16.5mOhm @ 31A, 10V
Power Dissipation (Max): 115W (Tc)
Vgs(th) (Max) @ Id: 4V @ 250µA
Supplier Device Package: TO-220AB
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 60 V
Gate Charge (Qg) (Max) @ Vgs: 67 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 1812 pF @ 25 V
Description: MOSFET N-CH 60V 55A TO220AB
Packaging: Tube
Package / Case: TO-220-3
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 55A (Tc)
Rds On (Max) @ Id, Vgs: 16.5mOhm @ 31A, 10V
Power Dissipation (Max): 115W (Tc)
Vgs(th) (Max) @ Id: 4V @ 250µA
Supplier Device Package: TO-220AB
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 60 V
Gate Charge (Qg) (Max) @ Vgs: 67 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 1812 pF @ 25 V
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| IR3892MTRPBF |
|
Виробник: Infineon Technologies
Description: IC REG BUCK ADJ 6A DL PQFN
Packaging: Tape & Reel (TR)
Package / Case: 31-PowerVFQFN
Output Type: Adjustable
Mounting Type: Surface Mount
Number of Outputs: 2
Function: Step-Down
Current - Output: 6A
Operating Temperature: -40°C ~ 125°C (TJ)
Output Configuration: Positive
Frequency - Switching: 300kHz ~ 1MHz
Voltage - Input (Max): 21V
Topology: Buck
Supplier Device Package: 31-PQFN (5x6)
Synchronous Rectifier: Yes
Voltage - Output (Max): 18.06V
Voltage - Input (Min): 1V
Voltage - Output (Min/Fixed): 0.5V
Description: IC REG BUCK ADJ 6A DL PQFN
Packaging: Tape & Reel (TR)
Package / Case: 31-PowerVFQFN
Output Type: Adjustable
Mounting Type: Surface Mount
Number of Outputs: 2
Function: Step-Down
Current - Output: 6A
Operating Temperature: -40°C ~ 125°C (TJ)
Output Configuration: Positive
Frequency - Switching: 300kHz ~ 1MHz
Voltage - Input (Max): 21V
Topology: Buck
Supplier Device Package: 31-PQFN (5x6)
Synchronous Rectifier: Yes
Voltage - Output (Max): 18.06V
Voltage - Input (Min): 1V
Voltage - Output (Min/Fixed): 0.5V
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| CY62147DV30LL-70BVXA |
|
Виробник: Infineon Technologies
Description: IC SRAM 4MBIT PARALLEL 48VFBGA
Packaging: Tray
Package / Case: 48-VFBGA
Mounting Type: Surface Mount
Memory Size: 4Mbit
Memory Type: Volatile
Operating Temperature: -40°C ~ 85°C (TA)
Voltage - Supply: 2.2V ~ 3.6V
Technology: SRAM - Asynchronous
Memory Format: SRAM
Supplier Device Package: 48-VFBGA (6x8)
Write Cycle Time - Word, Page: 70ns
Memory Interface: Parallel
Access Time: 70 ns
Memory Organization: 256K x 16
DigiKey Programmable: Not Verified
Description: IC SRAM 4MBIT PARALLEL 48VFBGA
Packaging: Tray
Package / Case: 48-VFBGA
Mounting Type: Surface Mount
Memory Size: 4Mbit
Memory Type: Volatile
Operating Temperature: -40°C ~ 85°C (TA)
Voltage - Supply: 2.2V ~ 3.6V
Technology: SRAM - Asynchronous
Memory Format: SRAM
Supplier Device Package: 48-VFBGA (6x8)
Write Cycle Time - Word, Page: 70ns
Memory Interface: Parallel
Access Time: 70 ns
Memory Organization: 256K x 16
DigiKey Programmable: Not Verified
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| CY62147DV30L-55BVXE |
|
Виробник: Infineon Technologies
Description: IC SRAM 4MBIT PARALLEL 48VFBGA
Packaging: Tray
Package / Case: 48-VFBGA
Mounting Type: Surface Mount
Memory Size: 4Mbit
Memory Type: Volatile
Operating Temperature: -40°C ~ 125°C (TA)
Voltage - Supply: 2.2V ~ 3.6V
Technology: SRAM - Asynchronous
Memory Format: SRAM
Supplier Device Package: 48-VFBGA (6x8)
Write Cycle Time - Word, Page: 55ns
Memory Interface: Parallel
Access Time: 55 ns
Memory Organization: 256K x 16
DigiKey Programmable: Not Verified
Description: IC SRAM 4MBIT PARALLEL 48VFBGA
Packaging: Tray
Package / Case: 48-VFBGA
Mounting Type: Surface Mount
Memory Size: 4Mbit
Memory Type: Volatile
Operating Temperature: -40°C ~ 125°C (TA)
Voltage - Supply: 2.2V ~ 3.6V
Technology: SRAM - Asynchronous
Memory Format: SRAM
Supplier Device Package: 48-VFBGA (6x8)
Write Cycle Time - Word, Page: 55ns
Memory Interface: Parallel
Access Time: 55 ns
Memory Organization: 256K x 16
DigiKey Programmable: Not Verified
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| CY62147DV30L-55ZSXE |
|
Виробник: Infineon Technologies
Description: IC SRAM 4MBIT PARALLEL 44TSOP II
Packaging: Tube
Package / Case: 44-TSOP (0.400", 10.16mm Width)
Mounting Type: Surface Mount
Memory Size: 4Mbit
Memory Type: Volatile
Operating Temperature: -40°C ~ 125°C (TA)
Voltage - Supply: 2.2V ~ 3.6V
Technology: SRAM - Asynchronous
Memory Format: SRAM
Supplier Device Package: 44-TSOP II
Write Cycle Time - Word, Page: 55ns
Memory Interface: Parallel
Access Time: 55 ns
Memory Organization: 256K x 16
DigiKey Programmable: Not Verified
Description: IC SRAM 4MBIT PARALLEL 44TSOP II
Packaging: Tube
Package / Case: 44-TSOP (0.400", 10.16mm Width)
Mounting Type: Surface Mount
Memory Size: 4Mbit
Memory Type: Volatile
Operating Temperature: -40°C ~ 125°C (TA)
Voltage - Supply: 2.2V ~ 3.6V
Technology: SRAM - Asynchronous
Memory Format: SRAM
Supplier Device Package: 44-TSOP II
Write Cycle Time - Word, Page: 55ns
Memory Interface: Parallel
Access Time: 55 ns
Memory Organization: 256K x 16
DigiKey Programmable: Not Verified
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| IPS021S | |
|
Виробник: Infineon Technologies
Description: IC PWR SWITCH N-CHAN 1:1 D2PAK
Packaging: Tube
Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
Output Type: N-Channel
Mounting Type: Surface Mount
Number of Outputs: 1
Interface: On/Off
Switch Type: General Purpose
Operating Temperature: -40°C ~ 150°C (TJ)
Output Configuration: Low Side
Rds On (Typ): 130mOhm
Input Type: Non-Inverting
Voltage - Load: 35V (Max)
Voltage - Supply (Vcc/Vdd): Not Required
Current - Output (Max): 1.8A
Ratio - Input:Output: 1:1
Supplier Device Package: D2PAK
Fault Protection: Current Limiting (Fixed), Over Temperature
Description: IC PWR SWITCH N-CHAN 1:1 D2PAK
Packaging: Tube
Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
Output Type: N-Channel
Mounting Type: Surface Mount
Number of Outputs: 1
Interface: On/Off
Switch Type: General Purpose
Operating Temperature: -40°C ~ 150°C (TJ)
Output Configuration: Low Side
Rds On (Typ): 130mOhm
Input Type: Non-Inverting
Voltage - Load: 35V (Max)
Voltage - Supply (Vcc/Vdd): Not Required
Current - Output (Max): 1.8A
Ratio - Input:Output: 1:1
Supplier Device Package: D2PAK
Fault Protection: Current Limiting (Fixed), Over Temperature
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| BTG70013A1ESWDBTOBO1 |
|
Виробник: Infineon Technologies
Description: BTG70013A-1ESW DB
Packaging: Bulk
Function: Switch
Type: Power Management
Contents: Board(s)
Utilized IC / Part: BTG70013A-1ESW
Platform: Arduino
Description: BTG70013A-1ESW DB
Packaging: Bulk
Function: Switch
Type: Power Management
Contents: Board(s)
Utilized IC / Part: BTG70013A-1ESW
Platform: Arduino
на замовлення 1 шт:
термін постачання 21-31 дні (днів)| Кількість | Ціна |
|---|---|
| 1+ | 3748.26 грн |
| IAUCN04S7N040DATMA1 |
на замовлення 497 шт:
термін постачання 21-31 дні (днів)| Кількість | Ціна |
|---|---|
| 4+ | 89.13 грн |
| 10+ | 71.19 грн |
| 100+ | 53.20 грн |
| CY7C1148KV18-400BZXC |
|
Виробник: Infineon Technologies
Description: IC SRAM 18MBIT PARALLEL 165FBGA
Packaging: Tray
Package / Case: 165-LBGA
Mounting Type: Surface Mount
Memory Size: 18Mbit
Memory Type: Volatile
Operating Temperature: 0°C ~ 70°C (TA)
Voltage - Supply: 1.7V ~ 1.9V
Technology: SRAM - Synchronous, DDR II+
Clock Frequency: 400 MHz
Memory Format: SRAM
Supplier Device Package: 165-FBGA (13x15)
Memory Interface: Parallel
Memory Organization: 1M x 18
DigiKey Programmable: Not Verified
Description: IC SRAM 18MBIT PARALLEL 165FBGA
Packaging: Tray
Package / Case: 165-LBGA
Mounting Type: Surface Mount
Memory Size: 18Mbit
Memory Type: Volatile
Operating Temperature: 0°C ~ 70°C (TA)
Voltage - Supply: 1.7V ~ 1.9V
Technology: SRAM - Synchronous, DDR II+
Clock Frequency: 400 MHz
Memory Format: SRAM
Supplier Device Package: 165-FBGA (13x15)
Memory Interface: Parallel
Memory Organization: 1M x 18
DigiKey Programmable: Not Verified
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| IAUCN04S7L011ATMA1 |
|
Виробник: Infineon Technologies
Description: MOSFET_(20V 40V)
Packaging: Tape & Reel (TR)
Package / Case: 8-PowerTDFN
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 222A (Tj)
Rds On (Max) @ Id, Vgs: 1.13mOhm @ 60A, 10V
Power Dissipation (Max): 105W (Tc)
Vgs(th) (Max) @ Id: 1.8V @ 45µA
Supplier Device Package: PG-TDSON-8-34
Grade: Automotive
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±16V
Drain to Source Voltage (Vdss): 40 V
Gate Charge (Qg) (Max) @ Vgs: 64 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 4240 pF @ 20 V
Qualification: AEC-Q101
Description: MOSFET_(20V 40V)
Packaging: Tape & Reel (TR)
Package / Case: 8-PowerTDFN
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 222A (Tj)
Rds On (Max) @ Id, Vgs: 1.13mOhm @ 60A, 10V
Power Dissipation (Max): 105W (Tc)
Vgs(th) (Max) @ Id: 1.8V @ 45µA
Supplier Device Package: PG-TDSON-8-34
Grade: Automotive
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±16V
Drain to Source Voltage (Vdss): 40 V
Gate Charge (Qg) (Max) @ Vgs: 64 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 4240 pF @ 20 V
Qualification: AEC-Q101
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| IAUCN04S7L011ATMA1 |
|
Виробник: Infineon Technologies
Description: MOSFET_(20V 40V)
Packaging: Cut Tape (CT)
Package / Case: 8-PowerTDFN
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 222A (Tj)
Rds On (Max) @ Id, Vgs: 1.13mOhm @ 60A, 10V
Power Dissipation (Max): 105W (Tc)
Vgs(th) (Max) @ Id: 1.8V @ 45µA
Supplier Device Package: PG-TDSON-8-34
Grade: Automotive
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±16V
Drain to Source Voltage (Vdss): 40 V
Gate Charge (Qg) (Max) @ Vgs: 64 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 4240 pF @ 20 V
Qualification: AEC-Q101
Description: MOSFET_(20V 40V)
Packaging: Cut Tape (CT)
Package / Case: 8-PowerTDFN
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 222A (Tj)
Rds On (Max) @ Id, Vgs: 1.13mOhm @ 60A, 10V
Power Dissipation (Max): 105W (Tc)
Vgs(th) (Max) @ Id: 1.8V @ 45µA
Supplier Device Package: PG-TDSON-8-34
Grade: Automotive
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±16V
Drain to Source Voltage (Vdss): 40 V
Gate Charge (Qg) (Max) @ Vgs: 64 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 4240 pF @ 20 V
Qualification: AEC-Q101
на замовлення 862 шт:
термін постачання 21-31 дні (днів)| Кількість | Ціна |
|---|---|
| 4+ | 85.15 грн |
| 10+ | 53.26 грн |
| 100+ | 44.04 грн |
| 500+ | 41.25 грн |
| IQFH55N04NM6ATMA1 |
|
Виробник: Infineon Technologies
Description: TRENCH <= 40V
Packaging: Cut Tape (CT)
Package / Case: 12-PowerTDFN
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 53A (Ta), 451A (Tc)
Rds On (Max) @ Id, Vgs: 0.55mOhm @ 100A, 10V
Power Dissipation (Max): 3W (Ta), 214W (Tc)
Vgs(th) (Max) @ Id: 2.8V @ 1.05mA
Supplier Device Package: PG-TSON-12-1
Drive Voltage (Max Rds On, Min Rds On): 6V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 40 V
Gate Charge (Qg) (Max) @ Vgs: 177 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 11000 pF @ 20 V
Description: TRENCH <= 40V
Packaging: Cut Tape (CT)
Package / Case: 12-PowerTDFN
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 53A (Ta), 451A (Tc)
Rds On (Max) @ Id, Vgs: 0.55mOhm @ 100A, 10V
Power Dissipation (Max): 3W (Ta), 214W (Tc)
Vgs(th) (Max) @ Id: 2.8V @ 1.05mA
Supplier Device Package: PG-TSON-12-1
Drive Voltage (Max Rds On, Min Rds On): 6V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 40 V
Gate Charge (Qg) (Max) @ Vgs: 177 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 11000 pF @ 20 V
на замовлення 3000 шт:
термін постачання 21-31 дні (днів)| Кількість | Ціна |
|---|---|
| 1+ | 366.87 грн |
| 10+ | 234.42 грн |
| 100+ | 166.92 грн |
| 500+ | 129.66 грн |
| 1000+ | 124.81 грн |
| CY9AF315NAPF-G-JNE1 |
|
Виробник: Infineon Technologies
Description: IC MCU 32BIT 384KB FLASH 100QFP
Packaging: Tray
Package / Case: 100-BQFP
Mounting Type: Surface Mount
Speed: 40MHz
Program Memory Size: 384KB (384K x 8)
RAM Size: 32K x 8
Operating Temperature: -40°C ~ 105°C (TA)
Oscillator Type: Internal
Program Memory Type: FLASH
Core Processor: ARM® Cortex®-M3
Data Converters: A/D 16x12b
Core Size: 32-Bit Single-Core
Voltage - Supply (Vcc/Vdd): 2.7V ~ 5.5V
Connectivity: CSIO, EBI/EMI, I2C, LINbus, UART/USART, USB
Peripherals: DMA, LVD, POR, PWM, WDT
Supplier Device Package: 100-QFP (14x20)
Number of I/O: 83
DigiKey Programmable: Not Verified
Description: IC MCU 32BIT 384KB FLASH 100QFP
Packaging: Tray
Package / Case: 100-BQFP
Mounting Type: Surface Mount
Speed: 40MHz
Program Memory Size: 384KB (384K x 8)
RAM Size: 32K x 8
Operating Temperature: -40°C ~ 105°C (TA)
Oscillator Type: Internal
Program Memory Type: FLASH
Core Processor: ARM® Cortex®-M3
Data Converters: A/D 16x12b
Core Size: 32-Bit Single-Core
Voltage - Supply (Vcc/Vdd): 2.7V ~ 5.5V
Connectivity: CSIO, EBI/EMI, I2C, LINbus, UART/USART, USB
Peripherals: DMA, LVD, POR, PWM, WDT
Supplier Device Package: 100-QFP (14x20)
Number of I/O: 83
DigiKey Programmable: Not Verified
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| IRLU3636PBF |
|
Виробник: Infineon Technologies
Description: MOSFET N-CH 60V 50A IPAK
Packaging: Tube
Package / Case: TO-251-3 Short Leads, IPak, TO-251AA
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 50A (Tc)
Rds On (Max) @ Id, Vgs: 6.8mOhm @ 50A, 10V
Power Dissipation (Max): 143W (Tc)
Vgs(th) (Max) @ Id: 2.5V @ 100µA
Supplier Device Package: IPAK
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±16V
Drain to Source Voltage (Vdss): 60 V
Gate Charge (Qg) (Max) @ Vgs: 49 nC @ 4.5 V
Input Capacitance (Ciss) (Max) @ Vds: 3779 pF @ 50 V
Description: MOSFET N-CH 60V 50A IPAK
Packaging: Tube
Package / Case: TO-251-3 Short Leads, IPak, TO-251AA
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 50A (Tc)
Rds On (Max) @ Id, Vgs: 6.8mOhm @ 50A, 10V
Power Dissipation (Max): 143W (Tc)
Vgs(th) (Max) @ Id: 2.5V @ 100µA
Supplier Device Package: IPAK
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±16V
Drain to Source Voltage (Vdss): 60 V
Gate Charge (Qg) (Max) @ Vgs: 49 nC @ 4.5 V
Input Capacitance (Ciss) (Max) @ Vds: 3779 pF @ 50 V
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| CY62177GE30-55ZXIT |
|
Виробник: Infineon Technologies
Description: IC SRAM 32MBIT PARALLEL 48TSOP I
Packaging: Tape & Reel (TR)
Package / Case: 48-TFSOP (0.724", 18.40mm Width)
Mounting Type: Surface Mount
Memory Size: 32Mbit
Memory Type: Volatile
Operating Temperature: -40°C ~ 85°C (TA)
Voltage - Supply: 2.2V ~ 3.6V
Technology: SRAM - Asynchronous
Memory Format: SRAM
Supplier Device Package: 48-TSOP I
Write Cycle Time - Word, Page: 55ns
Memory Interface: Parallel
Access Time: 55 ns
Memory Organization: 2M x 16
DigiKey Programmable: Not Verified
Description: IC SRAM 32MBIT PARALLEL 48TSOP I
Packaging: Tape & Reel (TR)
Package / Case: 48-TFSOP (0.724", 18.40mm Width)
Mounting Type: Surface Mount
Memory Size: 32Mbit
Memory Type: Volatile
Operating Temperature: -40°C ~ 85°C (TA)
Voltage - Supply: 2.2V ~ 3.6V
Technology: SRAM - Asynchronous
Memory Format: SRAM
Supplier Device Package: 48-TSOP I
Write Cycle Time - Word, Page: 55ns
Memory Interface: Parallel
Access Time: 55 ns
Memory Organization: 2M x 16
DigiKey Programmable: Not Verified
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| CY62177GE30-55ZXI |
|
Виробник: Infineon Technologies
Description: IC SRAM 32MBIT PARALLEL 48TSOP I
Packaging: Tray
Package / Case: 48-TFSOP (0.724", 18.40mm Width)
Mounting Type: Surface Mount
Memory Size: 32Mbit
Memory Type: Volatile
Operating Temperature: -40°C ~ 85°C (TA)
Voltage - Supply: 2.2V ~ 3.6V
Technology: SRAM - Asynchronous
Memory Format: SRAM
Supplier Device Package: 48-TSOP I
Write Cycle Time - Word, Page: 55ns
Memory Interface: Parallel
Access Time: 55 ns
Memory Organization: 2M x 16
DigiKey Programmable: Not Verified
Description: IC SRAM 32MBIT PARALLEL 48TSOP I
Packaging: Tray
Package / Case: 48-TFSOP (0.724", 18.40mm Width)
Mounting Type: Surface Mount
Memory Size: 32Mbit
Memory Type: Volatile
Operating Temperature: -40°C ~ 85°C (TA)
Voltage - Supply: 2.2V ~ 3.6V
Technology: SRAM - Asynchronous
Memory Format: SRAM
Supplier Device Package: 48-TSOP I
Write Cycle Time - Word, Page: 55ns
Memory Interface: Parallel
Access Time: 55 ns
Memory Organization: 2M x 16
DigiKey Programmable: Not Verified
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| CY7C1370D-200BZC |
|
Виробник: Infineon Technologies
Description: IC SRAM 18MBIT PARALLEL 165FBGA
Packaging: Tray
Package / Case: 165-LBGA
Mounting Type: Surface Mount
Memory Size: 18Mbit
Memory Type: Volatile
Operating Temperature: 0°C ~ 70°C (TA)
Voltage - Supply: 3.135V ~ 3.6V
Technology: SRAM - Synchronous, SDR
Clock Frequency: 200 MHz
Memory Format: SRAM
Supplier Device Package: 165-FBGA (13x15)
Memory Interface: Parallel
Access Time: 3 ns
Memory Organization: 512K x 36
DigiKey Programmable: Not Verified
Description: IC SRAM 18MBIT PARALLEL 165FBGA
Packaging: Tray
Package / Case: 165-LBGA
Mounting Type: Surface Mount
Memory Size: 18Mbit
Memory Type: Volatile
Operating Temperature: 0°C ~ 70°C (TA)
Voltage - Supply: 3.135V ~ 3.6V
Technology: SRAM - Synchronous, SDR
Clock Frequency: 200 MHz
Memory Format: SRAM
Supplier Device Package: 165-FBGA (13x15)
Memory Interface: Parallel
Access Time: 3 ns
Memory Organization: 512K x 36
DigiKey Programmable: Not Verified
на замовлення 205 шт:
термін постачання 21-31 дні (днів)| Кількість | Ціна |
|---|---|
| 11+ | 2026.20 грн |
| CY7C1354D-200BZC |
|
Виробник: Infineon Technologies
Description: IC SRAM 9MBIT PARALLEL 165FBGA
Packaging: Bulk
Package / Case: 165-LBGA
Mounting Type: Surface Mount
Memory Size: 9Mbit
Memory Type: Volatile
Operating Temperature: 0°C ~ 70°C (TA)
Voltage - Supply: 2.4V ~ 2.6V
Technology: SRAM - Synchronous, SDR
Clock Frequency: 200 MHz
Memory Format: SRAM
Supplier Device Package: 165-FBGA (13x15)
Memory Interface: Parallel
Access Time: 3.2 ns
Memory Organization: 256K x 36
DigiKey Programmable: Not Verified
Description: IC SRAM 9MBIT PARALLEL 165FBGA
Packaging: Bulk
Package / Case: 165-LBGA
Mounting Type: Surface Mount
Memory Size: 9Mbit
Memory Type: Volatile
Operating Temperature: 0°C ~ 70°C (TA)
Voltage - Supply: 2.4V ~ 2.6V
Technology: SRAM - Synchronous, SDR
Clock Frequency: 200 MHz
Memory Format: SRAM
Supplier Device Package: 165-FBGA (13x15)
Memory Interface: Parallel
Access Time: 3.2 ns
Memory Organization: 256K x 36
DigiKey Programmable: Not Verified
на замовлення 57 шт:
термін постачання 21-31 дні (днів)| Кількість | Ціна |
|---|---|
| 26+ | 870.13 грн |
| CY7C1382D-200AXC |
Виробник: Infineon Technologies
Description: IC SRAM 18MBIT PARALLEL 100TQFP
Packaging: Tray
Package / Case: 100-LQFP
Mounting Type: Surface Mount
Memory Size: 18Mbit
Memory Type: Volatile
Operating Temperature: 0°C ~ 70°C (TA)
Voltage - Supply: 3.135V ~ 3.6V
Technology: SRAM - Synchronous, SDR
Clock Frequency: 200 MHz
Memory Format: SRAM
Supplier Device Package: 100-TQFP (14x20)
Memory Interface: Parallel
Access Time: 3 ns
Memory Organization: 1M x 18
DigiKey Programmable: Not Verified
Description: IC SRAM 18MBIT PARALLEL 100TQFP
Packaging: Tray
Package / Case: 100-LQFP
Mounting Type: Surface Mount
Memory Size: 18Mbit
Memory Type: Volatile
Operating Temperature: 0°C ~ 70°C (TA)
Voltage - Supply: 3.135V ~ 3.6V
Technology: SRAM - Synchronous, SDR
Clock Frequency: 200 MHz
Memory Format: SRAM
Supplier Device Package: 100-TQFP (14x20)
Memory Interface: Parallel
Access Time: 3 ns
Memory Organization: 1M x 18
DigiKey Programmable: Not Verified
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| CY7C1370D-200BGXC |
|
Виробник: Infineon Technologies
Description: IC SRAM 18MBIT PARALLEL 119PBGA
Packaging: Tray
Package / Case: 119-BGA
Mounting Type: Surface Mount
Memory Size: 18Mbit
Memory Type: Volatile
Operating Temperature: 0°C ~ 70°C (TA)
Voltage - Supply: 3.135V ~ 3.6V
Technology: SRAM - Synchronous, SDR
Clock Frequency: 200 MHz
Memory Format: SRAM
Supplier Device Package: 119-PBGA (14x22)
Memory Interface: Parallel
Access Time: 3 ns
Memory Organization: 512K x 36
DigiKey Programmable: Not Verified
Description: IC SRAM 18MBIT PARALLEL 119PBGA
Packaging: Tray
Package / Case: 119-BGA
Mounting Type: Surface Mount
Memory Size: 18Mbit
Memory Type: Volatile
Operating Temperature: 0°C ~ 70°C (TA)
Voltage - Supply: 3.135V ~ 3.6V
Technology: SRAM - Synchronous, SDR
Clock Frequency: 200 MHz
Memory Format: SRAM
Supplier Device Package: 119-PBGA (14x22)
Memory Interface: Parallel
Access Time: 3 ns
Memory Organization: 512K x 36
DigiKey Programmable: Not Verified
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| CY7C1370D-200AXC |
Виробник: Infineon Technologies
Description: IC SRAM 18MBIT PARALLEL 100TQFP
Packaging: Tray
Package / Case: 100-LQFP
Mounting Type: Surface Mount
Memory Size: 18Mbit
Memory Type: Volatile
Operating Temperature: 0°C ~ 70°C (TA)
Voltage - Supply: 3.135V ~ 3.6V
Technology: SRAM - Synchronous, SDR
Clock Frequency: 200 MHz
Memory Format: SRAM
Supplier Device Package: 100-TQFP (14x20)
Memory Interface: Parallel
Access Time: 3 ns
Memory Organization: 512K x 36
DigiKey Programmable: Not Verified
Description: IC SRAM 18MBIT PARALLEL 100TQFP
Packaging: Tray
Package / Case: 100-LQFP
Mounting Type: Surface Mount
Memory Size: 18Mbit
Memory Type: Volatile
Operating Temperature: 0°C ~ 70°C (TA)
Voltage - Supply: 3.135V ~ 3.6V
Technology: SRAM - Synchronous, SDR
Clock Frequency: 200 MHz
Memory Format: SRAM
Supplier Device Package: 100-TQFP (14x20)
Memory Interface: Parallel
Access Time: 3 ns
Memory Organization: 512K x 36
DigiKey Programmable: Not Verified
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| FD200R12KE3PHOSA1 |
|
Виробник: Infineon Technologies
Description: IGBT MODULE 1200V 200A
Packaging: Tray
Package / Case: Module
Mounting Type: Chassis Mount
Input: Standard
Configuration: Single
Operating Temperature: -40°C ~ 125°C
Vce(on) (Max) @ Vge, Ic: 2.15V @ 15V, 200A
NTC Thermistor: No
Supplier Device Package: Module
IGBT Type: Trench Field Stop
Current - Collector (Ic) (Max): 200 A
Voltage - Collector Emitter Breakdown (Max): 1200 V
Current - Collector Cutoff (Max): 5 mA
Input Capacitance (Cies) @ Vce: 14 nF @ 25 V
Description: IGBT MODULE 1200V 200A
Packaging: Tray
Package / Case: Module
Mounting Type: Chassis Mount
Input: Standard
Configuration: Single
Operating Temperature: -40°C ~ 125°C
Vce(on) (Max) @ Vge, Ic: 2.15V @ 15V, 200A
NTC Thermistor: No
Supplier Device Package: Module
IGBT Type: Trench Field Stop
Current - Collector (Ic) (Max): 200 A
Voltage - Collector Emitter Breakdown (Max): 1200 V
Current - Collector Cutoff (Max): 5 mA
Input Capacitance (Cies) @ Vce: 14 nF @ 25 V
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| BGT24ATR22E6433XUMA1 |
Виробник: Infineon Technologies
Description: BGT24ATR22E6433XUMA1
Packaging: Tape & Reel (TR)
Package / Case: 32-PowerVFQFN
Mounting Type: Surface Mount
Function: VCO
Frequency: 24GHz ~ 24.25GHz
RF Type: Radar
Secondary Attributes: ADC
Supplier Device Package: PG-VQFN-32-9
Grade: Automotive
Qualification: AEC-Q100
Description: BGT24ATR22E6433XUMA1
Packaging: Tape & Reel (TR)
Package / Case: 32-PowerVFQFN
Mounting Type: Surface Mount
Function: VCO
Frequency: 24GHz ~ 24.25GHz
RF Type: Radar
Secondary Attributes: ADC
Supplier Device Package: PG-VQFN-32-9
Grade: Automotive
Qualification: AEC-Q100
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