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KP276D1201XTMA1 KP276D1201XTMA1 Infineon Technologies Infineon-KP276D1201-DataSheet-v01_00-EN.pdf?fileId=8ac78c8c7d0d8da4017d0fd7eeeb2fe1 Description: SENSOR 58.02PSIA 12BIT DSOF8
Features: Temperature Compensated
Packaging: Tape & Reel (TR)
Package / Case: 8-SMD Module
Output Type: SENT
Mounting Type: Surface Mount
Output: 12 b
Operating Pressure: 1.45 ~ 58.02PSI (10kPa ~ 400kPa)
Pressure Type: Absolute
Accuracy: ±0.77%
Operating Temperature: -40°C ~ 150°C
Termination Style: SMD (SMT) Tab
Voltage - Supply: 4.5V ~ 5.5V
Supplier Device Package: PG-DSOF-8-162
Port Style: No Port
Grade: Automotive
Qualification: AEC-Q100
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CYT4DNJBMCQ1BZSGS Infineon Technologies Infineon-TRAVEO_T2G_CYT4DN-DataSheet-v01_00-EN.pdf?fileId=8ac78c8c869190210186f0cceff43fd0 Description: TRAVEO-2 CLUST.2.5DGRAPH
Packaging: Tray
Package / Case: 327-LFBGA
Mounting Type: Surface Mount
Speed: 100MHz, 320MHz
Program Memory Size: 6.19MB (6.19M x 8)
RAM Size: 640K x 8
Operating Temperature: -40°C ~ 105°C (TA)
Oscillator Type: External, Internal
Program Memory Type: FLASH
EEPROM Size: 128K x 8
Core Processor: ARM® Cortex®-M0+, ARM® Cortex®-M7F
Data Converters: A/D 48x12b SAR
Core Size: 32-Bit Tri-Core
Voltage - Supply (Vcc/Vdd): 2.7V ~ 5.5V
Connectivity: CANbus, Ethernet, I2C, LINbus, SPI, UART/USART
Peripherals: DMA, I2S, LVD, Temp Sensor, WDT
Supplier Device Package: 327-FBGA (17x17)
Number of I/O: 168
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S25HL01GTFAMHB010 S25HL01GTFAMHB010 Infineon Technologies en?dcId=8a8181663431cb50013431cb500b0000&downloadTitle=Infineon-S25HS256T_S25HS512T_S25HS01GT_S25HL256T_S25HL512T_S25HL01GT_256Mb_512Mb_1Gb_SEMPER_TM_Flash_Quad_SPI_1_8V_3-DataSheet-v68_00-EN.pdf&download=L2RnZGwvSW5maW5lb24 Description: IC FLASH 1GBIT SPI/QUAD 16SOIC
Packaging: Tray
Package / Case: 16-SOIC (0.295", 7.50mm Width)
Mounting Type: Surface Mount
Memory Size: 1Gbit
Memory Type: Non-Volatile
Operating Temperature: -40°C ~ 105°C (TA)
Voltage - Supply: 2.7V ~ 3.6V
Technology: FLASH - NOR (SLC)
Clock Frequency: 166 MHz
Memory Format: FLASH
Supplier Device Package: 16-SOIC
Memory Interface: SPI - Quad I/O, QPI
Memory Organization: 128M x 8
DigiKey Programmable: Not Verified
на замовлення 480 шт:
термін постачання 21-31 дні (днів)
1+1742.03 грн
10+1489.14 грн
25+1420.11 грн
40+1300.59 грн
80+1254.58 грн
230+1187.44 грн
440+1129.08 грн
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S25HL01GTFAMHB013 S25HL01GTFAMHB013 Infineon Technologies en?dcId=8a8181663431cb50013431cb500b0000&downloadTitle=Infineon-S25HS256T_S25HS512T_S25HS01GT_S25HL256T_S25HL512T_S25HL01GT_256Mb_512Mb_1Gb_SEMPER_TM_Flash_Quad_SPI_1_8V_3-DataSheet-v68_00-EN.pdf&download=L2RnZGwvSW5maW5lb24 Description: IC FLASH 1GBIT SPI/QUAD 16SOIC
Packaging: Tape & Reel (TR)
Package / Case: 16-SOIC (0.295", 7.50mm Width)
Mounting Type: Surface Mount
Memory Size: 1Gbit
Memory Type: Non-Volatile
Operating Temperature: -40°C ~ 105°C (TA)
Voltage - Supply: 2.7V ~ 3.6V
Technology: FLASH - NOR (SLC)
Clock Frequency: 166 MHz
Memory Format: FLASH
Supplier Device Package: 16-SOIC
Memory Interface: SPI - Quad I/O, QPI
Memory Organization: 128M x 8
DigiKey Programmable: Not Verified
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FM22L16-55-TGTR FM22L16-55-TGTR Infineon Technologies Infineon-FM22L16_4_MBIT_(256K_X_16)_F-RAM-DataSheet-v09_00-EN.pdf?fileId=8ac78c8c7d0d8da4017d0ec87dbd40fc&utm_source=cypress&utm_medium=referral&utm_campaign=202110_globe_en_all_integration-files Description: IC FRAM 4MBIT PARALLEL 44TSOP II
Packaging: Cut Tape (CT)
Package / Case: 44-TSOP (0.400", 10.16mm Width)
Mounting Type: Surface Mount
Memory Size: 4Mbit
Memory Type: Non-Volatile
Operating Temperature: -40°C ~ 85°C (TA)
Voltage - Supply: 2.7V ~ 3.6V
Technology: FRAM (Ferroelectric RAM)
Memory Format: FRAM
Supplier Device Package: 44-TSOP II
Write Cycle Time - Word, Page: 110ns
Memory Interface: Parallel
Access Time: 110 ns
Memory Organization: 256K x 16
DigiKey Programmable: Not Verified
на замовлення 1850 шт:
термін постачання 21-31 дні (днів)
1+2938.13 грн
10+2615.27 грн
25+2530.96 грн
50+2316.08 грн
100+2257.76 грн
250+2182.25 грн
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TLE42632GMXUMA1 TLE42632GMXUMA1 Infineon Technologies Infineon-TLE4263-2GM-DataSheet-v01_00-EN.pdf?fileId=8ac78c8c8e7ead30018ec6d7d79f43f5 Description: IC REG LIN 5V 180MA PG-DSO-14-61
Packaging: Tape & Reel (TR)
Package / Case: 14-SOIC (0.154", 3.90mm Width)
Output Type: Fixed
Mounting Type: Surface Mount
Current - Output: 180mA
Operating Temperature: -40°C ~ 150°C
Output Configuration: Positive
Voltage - Input (Max): 45V
Number of Regulators: 1
Supplier Device Package: PG-DSO-14-61
Voltage - Output (Min/Fixed): 5V
Control Features: Delay, Inhibit, Reset Output, Watchdog
Grade: Automotive
Protection Features: Over Temperature, Reverse Polarity, Short Circuit
Qualification: AEC-Q100
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TLE42632GSXUMA1 TLE42632GSXUMA1 Infineon Technologies Infineon-TLE4263-2GS-DataSheet-v01_00-EN.pdf?fileId=8ac78c8c8e7ead30018ec6d7e1c743f8 Description: IC REG LINEAR 5V 180MA 8DSO-62
Packaging: Tape & Reel (TR)
Package / Case: 8-SOIC (0.154", 3.90mm Width)
Output Type: Fixed
Mounting Type: Surface Mount
Current - Output: 180mA
Operating Temperature: -40°C ~ 150°C
Output Configuration: Positive
Voltage - Input (Max): 45V
Number of Regulators: 1
Supplier Device Package: PG-DSO-8-62
Voltage - Output (Min/Fixed): 5V
Control Features: Delay, Inhibit, Reset Output, Watchdog
Grade: Automotive
Protection Features: Over Temperature, Reverse Polarity, Short Circuit
Qualification: AEC-Q100
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IPA65R150CFDXKSA2 IPA65R150CFDXKSA2 Infineon Technologies Infineon-IPX65R150CFD-DS-v02_00-en.pdf?fileId=db3a3043338c8ac80133ace218433063 Description: MOSFET N-CH 650V 22.4A TO220
Packaging: Tube
Package / Case: TO-220-3 Full Pack
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 22.4A (Tc)
Rds On (Max) @ Id, Vgs: 150mOhm @ 9.3A, 10V
Power Dissipation (Max): 34.7W (Tc)
Vgs(th) (Max) @ Id: 4.5V @ 900µA
Supplier Device Package: PG-TO220-FP
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 650 V
Gate Charge (Qg) (Max) @ Vgs: 86 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 2340 pF @ 100 V
на замовлення 494 шт:
термін постачання 21-31 дні (днів)
1+334.24 грн
50+165.73 грн
100+150.60 грн
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CYT4DNJBCCQ1BZSGS CYT4DNJBCCQ1BZSGS Infineon Technologies Infineon-TRAVEO_T2G_CYT4DN-DataSheet-v01_00-EN.pdf?fileId=8ac78c8c869190210186f0cceff43fd0 Description: TRAVEO-2 CLUST.2.5DGRAPH
Packaging: Tray
Package / Case: 327-LFBGA
Mounting Type: Surface Mount
Speed: 100MHz, 320MHz
Program Memory Size: 6.19MB (6.19M x 8)
RAM Size: 640K x 8
Operating Temperature: -40°C ~ 105°C (TA)
Oscillator Type: External, Internal
Program Memory Type: FLASH
EEPROM Size: 128K x 8
Core Processor: ARM® Cortex®-M0+, ARM® Cortex®-M7F
Data Converters: A/D 48x12b SAR
Core Size: 32-Bit Tri-Core
Voltage - Supply (Vcc/Vdd): 2.7V ~ 5.5V
Connectivity: CANbus, Ethernet, I2C, LINbus, SPI, UART/USART
Peripherals: DMA, I2S, LVD, Temp Sensor, WDT
Supplier Device Package: 327-FBGA (17x17)
Number of I/O: 168
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CYT4DNJBCCQ1BZSGST CYT4DNJBCCQ1BZSGST Infineon Technologies Infineon-TRAVEO_T2G_CYT4DN-DataSheet-v01_00-EN.pdf?fileId=8ac78c8c869190210186f0cceff43fd0 Description: TRAVEO-2 CLUST.2.5DGRAPH
Packaging: Tape & Reel (TR)
Package / Case: 327-LFBGA
Mounting Type: Surface Mount
Speed: 100MHz, 320MHz
Program Memory Size: 6.19MB (6.19M x 8)
RAM Size: 640K x 8
Operating Temperature: -40°C ~ 105°C (TA)
Oscillator Type: External, Internal
Program Memory Type: FLASH
EEPROM Size: 128K x 8
Core Processor: ARM® Cortex®-M0+, ARM® Cortex®-M7F
Data Converters: A/D 48x12b SAR
Core Size: 32-Bit Tri-Core
Voltage - Supply (Vcc/Vdd): 2.7V ~ 5.5V
Connectivity: CANbus, Ethernet, I2C, LINbus, SPI, UART/USART
Peripherals: DMA, I2S, LVD, Temp Sensor, WDT
Supplier Device Package: 327-FBGA (17x17)
Number of I/O: 168
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FF1500R12IE5BPSA1 FF1500R12IE5BPSA1 Infineon Technologies Infineon-FF1500R12IE5-DS-v03_00-EN.pdf?fileId=5546d4625f2e26bc015f2e9197d90007 Description: IGBT MOD 1200V 1500A 20MW
Packaging: Tray
Package / Case: Module
Mounting Type: Chassis Mount
Input: Standard
Configuration: 2 Independent
Operating Temperature: -40°C ~ 175°C (TJ)
Vce(on) (Max) @ Vge, Ic: 2.15V @ 15V, 1500A
NTC Thermistor: Yes
Supplier Device Package: Module
IGBT Type: Trench Field Stop
Current - Collector (Ic) (Max): 1500 A
Voltage - Collector Emitter Breakdown (Max): 1200 V
Power - Max: 20 mW
Current - Collector Cutoff (Max): 5 mA
Input Capacitance (Cies) @ Vce: 82 nF @ 25 V
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CY8C4125PVE-S412 CY8C4125PVE-S412 Infineon Technologies Description: IC MCU 32BIT 32KB FLASH 28SSOP
Packaging: Tube
Package / Case: 28-SSOP (0.209", 5.30mm Width)
Mounting Type: Surface Mount
Speed: 24MHz
Program Memory Size: 32KB (32K x 8)
RAM Size: 4K x 8
Operating Temperature: -40°C ~ 125°C (TA)
Oscillator Type: Internal
Program Memory Type: FLASH
Core Processor: ARM® Cortex®-M0+
Data Converters: A/D 16x10b, 12x12b SAR; D/A 2x7b
Core Size: 32-Bit
Voltage - Supply (Vcc/Vdd): 1.71V ~ 5.5V
Connectivity: I2C, IrDA, LINbus, Microwire, SmartCard, SPI, SSP, UART/USART
Peripherals: Brown-out Detect/Reset, CapSense, LCD, LVD, POR, PWM, WDT
Supplier Device Package: 28-SSOP
Grade: Automotive
Number of I/O: 24
Qualification: AEC-Q100
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CY8C4147AZS-S475T CY8C4147AZS-S475T Infineon Technologies Description: IC MCU 32BIT 128KB FLASH 64LQFP
Packaging: Tape & Reel (TR)
Package / Case: 64-LQFP
Mounting Type: Surface Mount
Speed: 24MHz
Program Memory Size: 128KB (128K x 8)
RAM Size: 16K x 8
Operating Temperature: -40°C ~ 105°C (TA)
Oscillator Type: Internal
Program Memory Type: FLASH
Core Processor: ARM® Cortex®-M0+
Data Converters: A/D 16, 20x10/12b SAR
Core Size: 32-Bit
Voltage - Supply (Vcc/Vdd): 1.71V ~ 5.5V
Connectivity: I2C, IrDA, LINbus, Microwire, SmartCard, SPI, SSP, UART/USART
Peripherals: Brown-out Detect/Reset, CapSense, LCD, POR, PWM, WDT
Supplier Device Package: 64-TQFP (10x10)
Grade: Automotive
Number of I/O: 54
Qualification: AEC-Q100
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CY8C24423A-24LTXIT CY8C24423A-24LTXIT Infineon Technologies Infineon-CY8C24123A_CY8C24223A_CY8C24423A_PSoC_Programmable_System-on-Chip-DataSheet-v24_00-EN.pdf?fileId=8ac78c8c7d0d8da4017d0ec6aaf93d0f Description: IC MCU 8BIT 4KB FLASH 32QFN
Packaging: Cut Tape (CT)
Package / Case: 32-UFQFN Exposed Pad
Mounting Type: Surface Mount
Speed: 24MHz
Program Memory Size: 4KB (4K x 8)
RAM Size: 256 x 8
Operating Temperature: -40°C ~ 85°C (TA)
Oscillator Type: Internal
Program Memory Type: FLASH
Core Processor: M8C
Data Converters: A/D 10x14b; D/A 2x9b
Core Size: 8-Bit
Voltage - Supply (Vcc/Vdd): 2.4V ~ 5.25V
Connectivity: I2C, SPI, UART/USART
Peripherals: POR, PWM, WDT
Supplier Device Package: 32-QFN (5x5)
Number of I/O: 24
DigiKey Programmable: Not Verified
на замовлення 2500 шт:
термін постачання 21-31 дні (днів)
1+436.10 грн
10+321.94 грн
25+297.43 грн
100+253.83 грн
250+241.76 грн
500+234.49 грн
1000+224.76 грн
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CY8C24423A-24LFXI CY8C24423A-24LFXI Infineon Technologies CY8C24x23A.pdf Description: IC MCU 8BIT 4KB FLASH 32QFN
Packaging: Tube
Package / Case: 32-VFQFN Exposed Pad
Mounting Type: Surface Mount
Speed: 24MHz
Program Memory Size: 4KB (4K x 8)
RAM Size: 256 x 8
Operating Temperature: -40°C ~ 85°C (TA)
Oscillator Type: Internal
Program Memory Type: FLASH
Core Processor: M8C
Data Converters: A/D 10x14b; D/A 2x9b
Core Size: 8-Bit
Voltage - Supply (Vcc/Vdd): 2.4V ~ 5.25V
Connectivity: I2C, SPI, UART/USART
Peripherals: POR, PWM, WDT
Supplier Device Package: 32-QFN (5x5)
Number of I/O: 24
DigiKey Programmable: Not Verified
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CY3250-20SSOP-FK CY3250-20SSOP-FK Infineon Technologies Description: PSOC POD FEET FOR 20-SSOP
Packaging: Bulk
For Use With/Related Products: CY3215-DK, CY8C21334-24PVXI, CY8C21323-24PVXI, CY8C27243-24PVXI, CY8C24423A-24PVXI
Accessory Type: 4 Emulation Pods
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IPP60R037CM8XKSA1 IPP60R037CM8XKSA1 Infineon Technologies Description: IPP60R037CM8XKSA1
Packaging: Tube
Package / Case: TO-220-3
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 70A (Tj)
Rds On (Max) @ Id, Vgs: 37mOhm @ 27A, 10V
Power Dissipation (Max): 390W (Tc)
Vgs(th) (Max) @ Id: 4.7V @ 680µA
Supplier Device Package: PG-TO220-3-1
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 600 V
Gate Charge (Qg) (Max) @ Vgs: 79 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 3458 pF @ 400 V
на замовлення 252 шт:
термін постачання 21-31 дні (днів)
1+489.42 грн
50+345.83 грн
100+311.46 грн
В кошику  од. на суму  грн.
IPP018N03LF2SAKSA1 IPP018N03LF2SAKSA1 Infineon Technologies Infineon-IPP018N03LF2S-DataSheet-v02_00-EN.pdf?fileId=8ac78c8c901008d1019030cd1e162b8f Description: TRENCH <= 40V
Packaging: Tube
Package / Case: TO-220-3
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 35A (Ta), 128A (Tc)
Rds On (Max) @ Id, Vgs: 1.8mOhm @ 100A, 10V
Power Dissipation (Max): 3.8W (Ta), 167W (Tc)
Vgs(th) (Max) @ Id: 2.35V @ 110µA
Supplier Device Package: PG-TO220-3-U05
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 30 V
Gate Charge (Qg) (Max) @ Vgs: 143 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 6400 pF @ 15 V
на замовлення 1953 шт:
термін постачання 21-31 дні (днів)
4+101.07 грн
10+72.96 грн
100+60.89 грн
500+48.45 грн
1000+44.46 грн
Мінімальне замовлення: 4
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IPD06P003NATMA1 IPD06P003NATMA1 Infineon Technologies IPD06P003N.pdf Description: MOSFET P-CH 60V 22A TO252-3
Packaging: Tape & Reel (TR)
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: P-Channel
Current - Continuous Drain (Id) @ 25°C: 22A (Tc)
Rds On (Max) @ Id, Vgs: 65mOhm @ 22A, 10V
Power Dissipation (Max): 83W (Tc)
Vgs(th) (Max) @ Id: 4V @ 1.04mA
Supplier Device Package: PG-TO252-3
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 60 V
Gate Charge (Qg) (Max) @ Vgs: 39 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 1600 pF @ 30 V
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S29GL512T10TFI040 S29GL512T10TFI040 Infineon Technologies Infineon-S29GL01GT_S29GL512T_1-Gb_(128_MB)_512-Mb_(64_MB)_GL-T_MirrorBit_Eclipse_Flash-DataSheet-v13_00-EN.pdf?fileId=8ac78c8c7d0d8da4017d0ed2abb34fce&utm_source=cypress&utm_medium=referral&utm_campaign=202110_globe_en_all_in Description: IC FLASH 512MBIT PARALLEL 56TSOP
Packaging: Tray
Package / Case: 56-TFSOP (0.724", 18.40mm Width)
Mounting Type: Surface Mount
Memory Size: 512Mbit
Memory Type: Non-Volatile
Operating Temperature: -40°C ~ 85°C (TA)
Voltage - Supply: 2.7V ~ 3.6V
Technology: FLASH - NOR
Memory Format: FLASH
Supplier Device Package: 56-TSOP
Write Cycle Time - Word, Page: 60ns
Memory Interface: Parallel
Access Time: 100 ns
Memory Organization: 64M x 8
DigiKey Programmable: Not Verified
на замовлення 268 шт:
термін постачання 21-31 дні (днів)
1+771.94 грн
10+690.24 грн
25+668.98 грн
40+617.56 грн
91+599.77 грн
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IM64D121AXTMA1 IM64D121AXTMA1 Infineon Technologies Description: XENSIV - IM64D121A AUTOMOTIVE ME
Packaging: Tape & Reel (TR)
Output Type: Digital, PDM
Size / Dimension: 0.138" L x 0.104" W (3.50mm x 2.65mm)
Sensitivity: -26dB ±1dB @ 94dB SPL
Shape: Rectangular
Type: MEMS (Silicon)
S/N Ratio: 64dB
Termination: Solder Pads
Direction: Omnidirectional
Ratings: IP57 - Dust Protected, Waterproof
Port Location: Bottom
Height (Max): 0.043" (1.08mm)
Grade: Automotive
Voltage - Rated: 1.8 V
Current - Supply: 1.4 A
Voltage Range: 1.62 V ~ 3.6 V
Frequency Range: 10 Hz ~ 10 kHz
Qualification: AEC-Q103
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IM64D121AXTMA1 IM64D121AXTMA1 Infineon Technologies Description: XENSIV - IM64D121A AUTOMOTIVE ME
Packaging: Cut Tape (CT)
Output Type: Digital, PDM
Size / Dimension: 0.138" L x 0.104" W (3.50mm x 2.65mm)
Sensitivity: -26dB ±1dB @ 94dB SPL
Shape: Rectangular
Type: MEMS (Silicon)
S/N Ratio: 64dB
Termination: Solder Pads
Direction: Omnidirectional
Ratings: IP57 - Dust Protected, Waterproof
Port Location: Bottom
Height (Max): 0.043" (1.08mm)
Grade: Automotive
Voltage - Rated: 1.8 V
Current - Supply: 1.4 A
Voltage Range: 1.62 V ~ 3.6 V
Frequency Range: 10 Hz ~ 10 kHz
Qualification: AEC-Q103
на замовлення 4718 шт:
термін постачання 21-31 дні (днів)
3+125.74 грн
10+98.78 грн
25+91.04 грн
50+80.33 грн
100+75.53 грн
250+69.64 грн
500+64.44 грн
1000+60.64 грн
Мінімальне замовлення: 3
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ESD160B1W0201E6327XTSA1 Infineon Technologies Description: TVS DIODES
Packaging: Tape & Reel (TR)
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ESD160B1W0201E6327XTSA1 Infineon Technologies Description: TVS DIODES
Packaging: Cut Tape (CT)
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CYTVII-B-H-8M-176-CPU CYTVII-B-H-8M-176-CPU Infineon Technologies Infineon-002-25907_0C_CYTVII-B-H-8M-176-CPU_EVALUATION_BOARD-UserManual-v01_00-EN.pdf?fileId=8ac78c8c8b6555fe018baddfdf637dd4 Description: CPU_BOARD FOR TVII-B-H-4M-176
Packaging: Bulk
Mounting Type: Socket
Type: MCU 32-Bit
Contents: Board(s)
Core Processor: ARM® Cortex®-M7
Utilized IC / Part: CYT4BF
на замовлення 3 шт:
термін постачання 21-31 дні (днів)
1+55054.11 грн
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IPA60R1K5CEXKSA1 IPA60R1K5CEXKSA1 Infineon Technologies Infineon-IPA60R1K5CE-DS-v02_00-EN.pdf?fileId=5546d462533600a401537a8c69e87218 Description: MOSFET N-CH 600V 5A TO220
Packaging: Tube
Package / Case: TO-220-3 Full Pack
Mounting Type: Through Hole
Operating Temperature: -40°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 5A (Tc)
Rds On (Max) @ Id, Vgs: 1.5Ohm @ 1.1A, 10V
Power Dissipation (Max): 20W (Tc)
Vgs(th) (Max) @ Id: 3.5V @ 90µA
Supplier Device Package: PG-TO220-FP
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 600 V
Gate Charge (Qg) (Max) @ Vgs: 9.4 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 200 pF @ 100 V
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TLE49SRC8XUMA1 Infineon Technologies TLE49SR.pdf Description: POSITION SENSORS
Packaging: Tape & Reel (TR)
Features: Temperature Compensated
Package / Case: 8-SOIC (0.154", 3.90mm Width)
Output Type: SPC
Mounting Type: Surface Mount
Axis: X, Y, Z
Operating Temperature: -40°C ~ 125°C
Voltage - Supply: 4.5V ~ 5.5V
Technology: Hall Effect
Resolution: 14 b
Sensing Range: 20mT ~ 90mT
Current - Output (Max): 120µA
Current - Supply (Max): 16.5mA
Supplier Device Package: PG-TDSO-8-1
Grade: Automotive
Qualification: AEC-Q100
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TLE49SRC8XUMA1 Infineon Technologies TLE49SR.pdf Description: POSITION SENSORS
Features: Temperature Compensated
Packaging: Cut Tape (CT)
Package / Case: 8-SOIC (0.154", 3.90mm Width)
Output Type: SPC
Mounting Type: Surface Mount
Axis: X, Y, Z
Operating Temperature: -40°C ~ 125°C
Voltage - Supply: 4.5V ~ 5.5V
Technology: Hall Effect
Resolution: 14 b
Sensing Range: 20mT ~ 90mT
Current - Output (Max): 120µA
Current - Supply (Max): 16.5mA
Supplier Device Package: PG-TDSO-8-1
Grade: Automotive
Qualification: AEC-Q100
на замовлення 300 шт:
термін постачання 21-31 дні (днів)
1+524.44 грн
5+425.62 грн
10+395.43 грн
25+336.78 грн
50+312.97 грн
100+290.86 грн
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TLE49SRP8XUMA1 Infineon Technologies TLE49SR.pdf Description: POSITION SENSORS
Features: Temperature Compensated
Packaging: Tape & Reel (TR)
Package / Case: 8-SOIC (0.154", 3.90mm Width)
Output Type: PWM
Mounting Type: Surface Mount
Axis: X, Y, Z
Operating Temperature: -40°C ~ 125°C
Voltage - Supply: 4.5V ~ 5.5V
Technology: Hall Effect
Resolution: 14 b
Sensing Range: 20mT ~ 90mT
Current - Output (Max): 120µA
Current - Supply (Max): 16.5mA
Supplier Device Package: PG-TDSO-8-1
Grade: Automotive
Qualification: AEC-Q100
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TLE49SRP8XUMA1 Infineon Technologies TLE49SR.pdf Description: POSITION SENSORS
Features: Temperature Compensated
Packaging: Cut Tape (CT)
Package / Case: 8-SOIC (0.154", 3.90mm Width)
Output Type: PWM
Mounting Type: Surface Mount
Axis: X, Y, Z
Operating Temperature: -40°C ~ 125°C
Voltage - Supply: 4.5V ~ 5.5V
Technology: Hall Effect
Resolution: 14 b
Sensing Range: 20mT ~ 90mT
Current - Output (Max): 120µA
Current - Supply (Max): 16.5mA
Supplier Device Package: PG-TDSO-8-1
Grade: Automotive
Qualification: AEC-Q100
на замовлення 300 шт:
термін постачання 21-31 дні (днів)
1+511.71 грн
5+415.51 грн
10+386.08 грн
25+328.81 грн
50+305.55 грн
100+283.97 грн
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S29GL128S10GHB013 S29GL128S10GHB013 Infineon Technologies Infineon-S29GL01GS_S29GL512S_S29GL256S_S29GL128S_128_Mb_256_Mb_512_Mb_1_Gb_GL-S_MIRRORBIT_TM_Flash_Parallel_3-DataSheet-v20_00-EN.pdf?fileId=8ac78c8c7d0d8da4017d0ed07ac14bd5 Description: IC FLASH 128MBIT CFI 56FBGA
Packaging: Cut Tape (CT)
Package / Case: 56-VFBGA
Mounting Type: Surface Mount
Memory Size: 128Mbit
Memory Type: Non-Volatile
Operating Temperature: -40°C ~ 105°C (TA)
Voltage - Supply: 2.7V ~ 3.6V
Technology: FLASH - NOR (SLC)
Memory Format: FLASH
Supplier Device Package: 56-FBGA (9x7)
Grade: Automotive
Write Cycle Time - Word, Page: 60ns
Memory Interface: CFI
Access Time: 100 ns
Memory Organization: 16M x 8
Qualification: AEC-Q100
на замовлення 2700 шт:
термін постачання 21-31 дні (днів)
1+463.96 грн
10+415.43 грн
25+402.82 грн
50+369.11 грн
100+360.21 грн
250+348.56 грн
500+334.29 грн
1000+325.85 грн
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IPP020N03LF2SAKSA1 IPP020N03LF2SAKSA1 Infineon Technologies Infineon-IPP020N03LF2S-DataSheet-v02_01-EN.pdf?fileId=8ac78c8c901008d101902fe2ba53256d Description: TRENCH <= 40V
Packaging: Tube
Package / Case: TO-220-3
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 33A (Ta), 125A (Tc)
Rds On (Max) @ Id, Vgs: 2.05mOhm @ 70A, 10V
Power Dissipation (Max): 3.8W (Ta), 136W (Tc)
Vgs(th) (Max) @ Id: 2.35V @ 80µA
Supplier Device Package: PG-TO220-3-U05
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 30 V
Gate Charge (Qg) (Max) @ Vgs: 104 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 4700 pF @ 15 V
на замовлення 877 шт:
термін постачання 21-31 дні (днів)
3+113.80 грн
10+77.09 грн
100+57.29 грн
500+43.86 грн
Мінімальне замовлення: 3
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TLD5098EPVSEPICTOBO1 TLD5098EPVSEPICTOBO1 Infineon Technologies Infineon-TLD5098EP_VSEPIC-UserManual-v01_00-EN.pdf?fileId=5546d46274dd77260174eb6fd9eb0ae7 Description: EVAL BOARD FOR TLD5098EP
Packaging: Bulk
Voltage - Output: 12V
Voltage - Input: 8V ~ 27V
Current - Output: 1A
Contents: Board(s)
Frequency - Switching: 400kHz
Regulator Topology: Buck-Boost
Board Type: Fully Populated
Utilized IC / Part: TLD5098EP
Supplied Contents: Board(s)
Main Purpose: DC/DC, Step Up or Down
Outputs and Type: 1 Non-Isolated Output
на замовлення 3 шт:
термін постачання 21-31 дні (днів)
1+5131.38 грн
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IMT65R107M1HXUMA1 IMT65R107M1HXUMA1 Infineon Technologies Infineon-IMT65R107M1H-DataSheet-v02_00-EN.pdf?fileId=8ac78c8c872bd8d601876f66b5d971d0 Description: SILICON CARBIDE MOSFET
Packaging: Tape & Reel (TR)
Package / Case: 8-PowerSFN
Mounting Type: Surface Mount
Technology: SiCFET (Silicon Carbide)
Supplier Device Package: PG-HSOF-8-2
Drive Voltage (Max Rds On, Min Rds On): 18V
Drain to Source Voltage (Vdss): 650 V
на замовлення 2000 шт:
термін постачання 21-31 дні (днів)
2000+197.39 грн
Мінімальне замовлення: 2000
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IMT65R107M1HXUMA1 IMT65R107M1HXUMA1 Infineon Technologies Infineon-IMT65R107M1H-DataSheet-v02_00-EN.pdf?fileId=8ac78c8c872bd8d601876f66b5d971d0 Description: SILICON CARBIDE MOSFET
Packaging: Cut Tape (CT)
Package / Case: 8-PowerSFN
Mounting Type: Surface Mount
Technology: SiCFET (Silicon Carbide)
Supplier Device Package: PG-HSOF-8-2
Drive Voltage (Max Rds On, Min Rds On): 18V
Drain to Source Voltage (Vdss): 650 V
на замовлення 2479 шт:
термін постачання 21-31 дні (днів)
1+476.69 грн
10+308.53 грн
100+224.67 грн
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ETD540N22P60XPSA1 Infineon Technologies Infineon-DS_eTT540N22P60-DS-v03_01-EN.pdf?fileId=5546d46266f85d6301670d4da56a366a Description: THYR / DIODE MODULE DK
Packaging: Tray
Package / Case: Module
Mounting Type: Chassis Mount
Operating Temperature: 135°C (TJ)
Structure: Series Connection - SCR/Diode
Current - Hold (Ih) (Max): 300 mA
Current - Gate Trigger (Igt) (Max): 250 mA
Current - Non Rep. Surge 50, 60Hz (Itsm): 16300A @ 50Hz
Number of SCRs, Diodes: 1 SCR, 1 Diode
Current - On State (It (AV)) (Max): 542 A
Voltage - Gate Trigger (Vgt) (Max): 2.2 V
Current - On State (It (RMS)) (Max): 700 A
Voltage - Off State: 2.2 kV
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FD401R17KF6CB2NOSA1 Infineon Technologies INFNS28314-1.pdf?t.download=true&u=ovmfp3 Description: FD401R17 - IGBT MODULE
Packaging: Bulk
на замовлення 28 шт:
термін постачання 21-31 дні (днів)
1+61022.68 грн
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CYPAP111A3-10SXQT CYPAP111A3-10SXQT Infineon Technologies Infineon-PAG1P_Datasheet_Primary_Side_Startup_Controller-DataSheet-v07_00-EN.pdf?fileId=8ac78c8c7d0d8da4017d0ee9bdef7294 Description: PRIMARY SIDE STARTUP CONTROLLER
Packaging: Cut Tape (CT)
Package / Case: 10-SOP (0.154", 3.90mm Width)
Output Connector: USB Micro
Mounting Type: Surface Mount
Voltage - Input: 85 ~ 265 VAC
Operating Temperature: -40°C ~ 125°C (TJ)
Duty Cycle: 70%
Frequency - Switching: 30kHz
Input Type: Fixed Blade
Internal Switch(s): No
Voltage - Breakdown: 500V
Form: Wall Mount (Class II)
Output Isolation: Isolated
Topology: Flyback, Secondary Side SR
Voltage - Supply (Vcc/Vdd): 85V ~ 265V
Supplier Device Package: 10-SOIC
Input Connector: NEMA 1-15P
Region Utilized: North America
Fault Protection: Current Limiting, Over Temperature, Over Voltage, Short Circuit, UVLO
Control Features: Frequency Control, Soft Start
на замовлення 2500 шт:
термін постачання 21-31 дні (днів)
4+93.11 грн
10+64.76 грн
25+58.61 грн
100+48.63 грн
250+45.60 грн
500+43.77 грн
1000+41.58 грн
Мінімальне замовлення: 4
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BCR420UE6433HTMA1 BCR420UE6433HTMA1 Infineon Technologies Infineon-BCR420U-BCR421U-DataSheet-v02_01-EN.pdf?fileId=5546d4626102d35a01617524f09e061d Description: IC LED DRIVER LINEAR 65MA SC74-6
Packaging: Tape & Reel (TR)
Package / Case: SC-74, SOT-457
Voltage - Output: 40V
Mounting Type: Surface Mount
Number of Outputs: 1
Type: Linear
Applications: Lighting
Current - Output / Channel: 65mA
Internal Switch(s): Yes
Supplier Device Package: PG-SC74-6
Voltage - Supply (Max): 40V
Grade: Automotive
Qualification: AEC-Q101
на замовлення 130000 шт:
термін постачання 21-31 дні (днів)
10000+8.94 грн
Мінімальне замовлення: 10000
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BCR420UE6433HTMA1 BCR420UE6433HTMA1 Infineon Technologies Infineon-BCR420U-BCR421U-DataSheet-v02_01-EN.pdf?fileId=5546d4626102d35a01617524f09e061d Description: IC LED DRIVER LINEAR 65MA SC74-6
Packaging: Cut Tape (CT)
Package / Case: SC-74, SOT-457
Voltage - Output: 40V
Mounting Type: Surface Mount
Number of Outputs: 1
Type: Linear
Applications: Lighting
Current - Output / Channel: 65mA
Internal Switch(s): Yes
Supplier Device Package: PG-SC74-6
Voltage - Supply (Max): 40V
Grade: Automotive
Qualification: AEC-Q101
на замовлення 132616 шт:
термін постачання 21-31 дні (днів)
13+24.67 грн
19+16.55 грн
25+14.71 грн
100+11.89 грн
250+10.98 грн
500+10.43 грн
1000+9.82 грн
2500+9.35 грн
5000+9.07 грн
Мінімальне замовлення: 13
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IPA082N10NF2SXKSA1 IPA082N10NF2SXKSA1 Infineon Technologies Infineon-IPA082N10NF2S-DataSheet-v02_01-EN.pdf?fileId=5546d46278d64ffd0179176be5971162 Description: TRENCH >=100V PG-TO220-3
Packaging: Bulk
Package / Case: TO-220-3 Full Pack
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 46A (Tc)
Rds On (Max) @ Id, Vgs: 8.2mOhm @ 30A, 10V
Power Dissipation (Max): 35W (Tc)
Vgs(th) (Max) @ Id: 3.8V @ 46µA
Supplier Device Package: PG-TO220 Full Pack
Drive Voltage (Max Rds On, Min Rds On): 6V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 100 V
Gate Charge (Qg) (Max) @ Vgs: 42 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 2000 pF @ 50 V
на замовлення 3000 шт:
термін постачання 21-31 дні (днів)
412+55.61 грн
Мінімальне замовлення: 412
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BTS700121ESPXUMA2 BTS700121ESPXUMA2 Infineon Technologies Infineon-BTS70012-1ESP-DataSheet-v01_20-EN.pdf?fileId=5546d462758f5bd1017598473e2a39a7 Description: PROFET PG-TSDSO-24
Features: Slew Rate Controlled
Packaging: Cut Tape (CT)
Package / Case: 24-TSSOP (0.154", 3.90mm Width) Exposed Pad
Output Type: N-Channel
Mounting Type: Surface Mount
Number of Outputs: 1
Switch Type: Relay, Solenoid Driver
Operating Temperature: -40°C ~ 150°C (TJ)
Output Configuration: High Side
Rds On (Typ): 1.4mOhm
Input Type: Non-Inverting
Voltage - Load: 4.1V ~ 28V
Voltage - Supply (Vcc/Vdd): 4.1V ~ 28V
Current - Output (Max): 31.3A
Ratio - Input:Output: 1:1
Supplier Device Package: PG-TSDSO-24-32
Fault Protection: Current Limiting (Fixed), Open Load Detect, Over Temperature, Over Voltage, Reverse Battery, UVLO
на замовлення 3069 шт:
термін постачання 21-31 дні (днів)
1+337.42 грн
10+247.30 грн
25+227.69 грн
100+193.52 грн
250+183.90 грн
500+178.10 грн
1000+170.49 грн
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BSC026N02KSGAUMA1 BSC026N02KSGAUMA1 Infineon Technologies BSC026N02KS+G+Rev1.05.pdf?folderId=db3a3043163797a6011637c252b10018&fileId=db3a3043163797a6011637c2a4280019 Description: MOSFET N-CH 20V 25A/100A TDSON
Packaging: Bulk
Package / Case: 8-PowerTDFN
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 25A (Ta), 100A (Tc)
Rds On (Max) @ Id, Vgs: 2.6mOhm @ 50A, 4.5V
Power Dissipation (Max): 2.8W (Ta), 78W (Tc)
Vgs(th) (Max) @ Id: 1.2V @ 200µA
Supplier Device Package: PG-TDSON-8-1
Drive Voltage (Max Rds On, Min Rds On): 2.5V, 4.5V
Vgs (Max): ±12V
Drain to Source Voltage (Vdss): 20 V
Gate Charge (Qg) (Max) @ Vgs: 52.7 nC @ 4.5 V
Input Capacitance (Ciss) (Max) @ Vds: 7800 pF @ 10 V
на замовлення 26892 шт:
термін постачання 21-31 дні (днів)
363+59.33 грн
Мінімальне замовлення: 363
В кошику  од. на суму  грн.
S29GL01GS11FHIV13 S29GL01GS11FHIV13 Infineon Technologies Infineon-1_GBIT_(128_MBYTE)_512_MBIT_(64_MBYTE)_256_MBIT_(32_MBYTE)_128_MBIT_(16_MBYTE)_3.0_V_GL-S_FLASH_MEMORY-DataSheet-v19_00-EN.pdf?fileId=8ac78c8c7d0d8da4017d0ed07ac14bd5&utm_source=cypress&utm_medium=referral&utm_campai Description: IC FLASH 1GBIT PARALLEL 64FBGA
Packaging: Tape & Reel (TR)
Package / Case: 64-LBGA
Mounting Type: Surface Mount
Memory Size: 1Gbit
Memory Type: Non-Volatile
Operating Temperature: -40°C ~ 85°C (TA)
Voltage - Supply: 1.65V ~ 3.6V
Technology: FLASH - NOR
Memory Format: FLASH
Supplier Device Package: 64-FBGA (13x11)
Write Cycle Time - Word, Page: 60ns
Memory Interface: Parallel
Access Time: 110 ns
Memory Organization: 64M x 16
DigiKey Programmable: Not Verified
на замовлення 1600 шт:
термін постачання 21-31 дні (днів)
1600+717.44 грн
Мінімальне замовлення: 1600
В кошику  од. на суму  грн.
S29GL01GS11FHIV13 S29GL01GS11FHIV13 Infineon Technologies Infineon-1_GBIT_(128_MBYTE)_512_MBIT_(64_MBYTE)_256_MBIT_(32_MBYTE)_128_MBIT_(16_MBYTE)_3.0_V_GL-S_FLASH_MEMORY-DataSheet-v19_00-EN.pdf?fileId=8ac78c8c7d0d8da4017d0ed07ac14bd5&utm_source=cypress&utm_medium=referral&utm_campai Description: IC FLASH 1GBIT PARALLEL 64FBGA
Packaging: Cut Tape (CT)
Package / Case: 64-LBGA
Mounting Type: Surface Mount
Memory Size: 1Gbit
Memory Type: Non-Volatile
Operating Temperature: -40°C ~ 85°C (TA)
Voltage - Supply: 1.65V ~ 3.6V
Technology: FLASH - NOR
Memory Format: FLASH
Supplier Device Package: 64-FBGA (13x11)
Write Cycle Time - Word, Page: 60ns
Memory Interface: Parallel
Access Time: 110 ns
Memory Organization: 64M x 16
DigiKey Programmable: Not Verified
на замовлення 1600 шт:
термін постачання 21-31 дні (днів)
1+1053.65 грн
10+899.83 грн
25+858.05 грн
50+776.75 грн
100+749.26 грн
250+714.35 грн
500+677.69 грн
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IR2308SPBF IR2308SPBF Infineon Technologies ir2308.pdf?fileId=5546d462533600a4015355c9a2b816e2 Description: IC GATE DRVR HALF-BRIDGE 8SOIC
Packaging: Tube
Package / Case: 8-SOIC (0.154", 3.90mm Width)
Mounting Type: Surface Mount
Operating Temperature: -40°C ~ 150°C (TJ)
Voltage - Supply: 10V ~ 20V
Input Type: Non-Inverting
High Side Voltage - Max (Bootstrap): 600 V
Supplier Device Package: 8-SOIC
Rise / Fall Time (Typ): 150ns, 50ns
Channel Type: Independent
Driven Configuration: Half-Bridge
Number of Drivers: 2
Gate Type: IGBT, N-Channel MOSFET
Logic Voltage - VIL, VIH: 0.8V, 2.9V
Current - Peak Output (Source, Sink): 200mA, 350mA
DigiKey Programmable: Not Verified
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IR2308PBF IR2308PBF Infineon Technologies ir2308.pdf?fileId=5546d462533600a4015355c9a2b816e2 Description: IC GATE DRVR HALF-BRIDGE 8DIP
Packaging: Tube
Package / Case: 8-DIP (0.300", 7.62mm)
Mounting Type: Through Hole
Operating Temperature: -40°C ~ 150°C (TJ)
Voltage - Supply: 10V ~ 20V
Input Type: Non-Inverting
High Side Voltage - Max (Bootstrap): 600 V
Supplier Device Package: 8-PDIP
Rise / Fall Time (Typ): 150ns, 50ns
Channel Type: Independent
Driven Configuration: Half-Bridge
Number of Drivers: 2
Gate Type: IGBT, N-Channel MOSFET
Logic Voltage - VIL, VIH: 0.8V, 2.9V
Current - Peak Output (Source, Sink): 200mA, 350mA
DigiKey Programmable: Not Verified
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CY8C4126AZI-M475 CY8C4126AZI-M475 Infineon Technologies download Description: IC MCU 32BIT 64KB FLASH 64TQFP
Packaging: Tray
Package / Case: 64-LQFP
Mounting Type: Surface Mount
Speed: 24MHz
Program Memory Size: 64KB (64K x 8)
RAM Size: 8K x 8
Operating Temperature: -40°C ~ 85°C (TA)
Oscillator Type: Internal
Program Memory Type: FLASH
Core Processor: ARM® Cortex®-M0
Data Converters: A/D 16x12b SAR; 2xIDAC
Core Size: 32-Bit Single-Core
Voltage - Supply (Vcc/Vdd): 1.71V ~ 5.5V
Connectivity: I2C, IrDA, LINbus, Microwire, SmartCard, SPI, SSP, UART/USART
Peripherals: Brown-out Detect/Reset, CapSense, LCD, LVD, POR, PWM, WDT
Supplier Device Package: 64-TQFP (10x10)
Number of I/O: 51
DigiKey Programmable: Not Verified
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IRS2003PBF IRS2003PBF Infineon Technologies irs2003pbf.pdf?fileId=5546d462533600a401535675afec2780 Description: IC GATE DRVR HALF-BRIDGE 8DIP
Packaging: Tube
Package / Case: 8-DIP (0.300", 7.62mm)
Mounting Type: Through Hole
Operating Temperature: -40°C ~ 150°C (TJ)
Voltage - Supply: 10V ~ 20V
Input Type: Inverting, Non-Inverting
High Side Voltage - Max (Bootstrap): 200 V
Supplier Device Package: 8-PDIP
Rise / Fall Time (Typ): 70ns, 35ns
Channel Type: Independent
Driven Configuration: Half-Bridge
Number of Drivers: 2
Gate Type: IGBT, MOSFET (N-Channel)
Logic Voltage - VIL, VIH: 0.8V, 2.5V
Current - Peak Output (Source, Sink): 290mA, 600mA
DigiKey Programmable: Not Verified
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IR2109PBF IR2109PBF Infineon Technologies ir2109.pdf?fileId=5546d462533600a4015355c7e85b1679 Description: IC GATE DRVR HALF-BRIDGE 8DIP
Packaging: Tube
Package / Case: 8-DIP (0.300", 7.62mm)
Mounting Type: Through Hole
Operating Temperature: -40°C ~ 150°C (TJ)
Voltage - Supply: 10V ~ 20V
Input Type: Non-Inverting
High Side Voltage - Max (Bootstrap): 600 V
Supplier Device Package: 8-PDIP
Rise / Fall Time (Typ): 150ns, 50ns
Channel Type: Synchronous
Driven Configuration: Half-Bridge
Number of Drivers: 2
Gate Type: IGBT, MOSFET (N-Channel)
Logic Voltage - VIL, VIH: 0.8V, 2.9V
Current - Peak Output (Source, Sink): 200mA, 350mA
DigiKey Programmable: Not Verified
на замовлення 387 шт:
термін постачання 21-31 дні (днів)
2+243.52 грн
10+176.49 грн
50+153.02 грн
100+136.80 грн
250+129.60 грн
Мінімальне замовлення: 2
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IAUTN06S5N008GATMA1 IAUTN06S5N008GATMA1 Infineon Technologies Infineon-IAUTN06S5N008G-DataSheet-v02_00-EN.pdf?fileId=8ac78c8c85ecb34701863141615f0dfd Description: MOSFET_)40V 60V)
Packaging: Tape & Reel (TR)
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IAUTN06S5N008GATMA1 IAUTN06S5N008GATMA1 Infineon Technologies Infineon-IAUTN06S5N008G-DataSheet-v02_00-EN.pdf?fileId=8ac78c8c85ecb34701863141615f0dfd Description: MOSFET_)40V 60V)
Packaging: Cut Tape (CT)
на замовлення 1790 шт:
термін постачання 21-31 дні (днів)
1+519.66 грн
10+338.87 грн
100+247.06 грн
500+199.95 грн
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IAUTN06S5N008ATMA1 IAUTN06S5N008ATMA1 Infineon Technologies Infineon-IAUTN06S5N008_Datasheet-DataSheet-v02_00-EN.pdf?fileId=8ac78c8c85ecb3470186314156af0dfa Description: MOSFET_)40V 60V)
Packaging: Tape & Reel (TR)
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IAUTN06S5N008ATMA1 IAUTN06S5N008ATMA1 Infineon Technologies Infineon-IAUTN06S5N008_Datasheet-DataSheet-v02_00-EN.pdf?fileId=8ac78c8c85ecb3470186314156af0dfa Description: MOSFET_)40V 60V)
Packaging: Cut Tape (CT)
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S6BP401AM2SN1B200 Infineon Technologies Infineon-S6BP401A_Power_Management_IC_for_Automotive_ADAS_Platform-DataSheet-v10_00-EN.pdf?fileId=8ac78c8c7d0d8da4017d0ed50c9b53cf Description: PMIC AUTO ANALOG
Packaging: Tape & Reel (TR)
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FS200R07A02E3S6BKSA3 Infineon Technologies Infineon-FS200R07A02E3_S6-DataSheet-v03_01-EN.pdf?fileId=5546d462636cc8fb016402b5998407c4 Description: HYBRID PACK DSC SI
Packaging: Tube
Package / Case: Module
Mounting Type: Chassis Mount
Input: Standard
Configuration: Three Phase
Operating Temperature: -40°C ~ 150°C (TJ)
Vce(on) (Max) @ Vge, Ic: 2.25V @ 15V, 200A
NTC Thermistor: Yes
Supplier Device Package: PG-MDIP-28
IGBT Type: Trench Field Stop
Current - Collector (Ic) (Max): 200 A
Voltage - Collector Emitter Breakdown (Max): 700 V
Power - Max: 694 W
Current - Collector Cutoff (Max): 100 µA
Input Capacitance (Cies) @ Vce: 13500 pF @ 25 V
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CY9AF112NPMC-GNE1 CY9AF112NPMC-GNE1 Infineon Technologies Description: IC MCU 32BIT 128KB FLASH 100LQFP
Packaging: Tray
Package / Case: 100-LQFP
Mounting Type: Surface Mount
Speed: 40MHz
Program Memory Size: 128KB (128K x 8)
RAM Size: 16K x 8
Operating Temperature: -40°C ~ 105°C (TA)
Oscillator Type: External, Internal
Program Memory Type: FLASH
Core Processor: ARM® Cortex®-M3
Data Converters: A/D 16x12b SAR
Core Size: 32-Bit Single-Core
Voltage - Supply (Vcc/Vdd): 2.7V ~ 5.5V
Connectivity: CSIO, EBI/EMI, I2C, LINbus, SPI, UART/USART
Peripherals: DMA, LVD, POR, PWM, WDT
Supplier Device Package: 100-LQFP (14x14)
Number of I/O: 83
DigiKey Programmable: Not Verified
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ETT540N22P60XPSA1 Infineon Technologies Infineon-DS_eTT540N22P60-DS-v03_01-EN.pdf?fileId=5546d46266f85d6301670d4da56a366a Description: THYR / DIODE MODULE DK
Packaging: Tray
Package / Case: Module
Mounting Type: Chassis Mount
Operating Temperature: 135°C (TJ)
Structure: Series Connection - All SCRs
Current - Hold (Ih) (Max): 300 mA
Current - Gate Trigger (Igt) (Max): 250 mA
Current - Non Rep. Surge 50, 60Hz (Itsm): 16300A @ 50Hz
Number of SCRs, Diodes: 2 SCRs
Current - On State (It (AV)) (Max): 542 A
Voltage - Gate Trigger (Vgt) (Max): 2.2 V
Current - On State (It (RMS)) (Max): 700 A
Voltage - Off State: 2.2 kV
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CY8CLED04-68LTXI CY8CLED04-68LTXI Infineon Technologies CY8CLED04.pdf Description: IC MCU 8BIT 16KB FLASH 68QFN
Packaging: Tray
Package / Case: 68-VFQFN Exposed Pad
Mounting Type: Surface Mount
Interface: I2C, SPI, UART/USART, USB
RAM Size: 1K x 8
Operating Temperature: -40°C ~ 85°C
Voltage - Supply: 3V ~ 5.25V
Controller Series: CY8CLED
Program Memory Type: FLASH (16kB)
Applications: HB LED Controller
Core Processor: M8C
Supplier Device Package: 68-QFN (8x8)
Number of I/O: 56
DigiKey Programmable: Not Verified
на замовлення 78 шт:
термін постачання 21-31 дні (днів)
1+650.97 грн
10+486.55 грн
25+451.49 грн
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CY7C1383KV33-133AXI CY7C1383KV33-133AXI Infineon Technologies Infineon-CY7C1381KV33_CY_7C1381KVE33_CY7C1383KV33_CY_7C1383KVE33_18-Mbit_(512_K_36_1_M_18)_Flow-Through_SRAM_(With_ECC)-DataSheet-v07_00-EN.pdf?fileId=8ac78c8c7d0d8da4017d0ed61b255667&utm_source=cypress&utm_medium=referral&ut Description: IC SRAM 18MBIT PARALLEL 100TQFP
Packaging: Tray
Package / Case: 100-LQFP
Mounting Type: Surface Mount
Memory Size: 18Mbit
Memory Type: Volatile
Operating Temperature: -40°C ~ 85°C (TA)
Voltage - Supply: 3.135V ~ 3.6V
Technology: SRAM - Synchronous, SDR
Clock Frequency: 133 MHz
Memory Format: SRAM
Supplier Device Package: 100-TQFP (14x20)
Memory Interface: Parallel
Access Time: 6.5 ns
Memory Organization: 1M x 18
DigiKey Programmable: Not Verified
на замовлення 97 шт:
термін постачання 21-31 дні (днів)
1+2420.06 грн
10+2155.16 грн
25+2086.00 грн
72+1883.73 грн
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KP276D1201XTMA1 Infineon-KP276D1201-DataSheet-v01_00-EN.pdf?fileId=8ac78c8c7d0d8da4017d0fd7eeeb2fe1
KP276D1201XTMA1
Виробник: Infineon Technologies
Description: SENSOR 58.02PSIA 12BIT DSOF8
Features: Temperature Compensated
Packaging: Tape & Reel (TR)
Package / Case: 8-SMD Module
Output Type: SENT
Mounting Type: Surface Mount
Output: 12 b
Operating Pressure: 1.45 ~ 58.02PSI (10kPa ~ 400kPa)
Pressure Type: Absolute
Accuracy: ±0.77%
Operating Temperature: -40°C ~ 150°C
Termination Style: SMD (SMT) Tab
Voltage - Supply: 4.5V ~ 5.5V
Supplier Device Package: PG-DSOF-8-162
Port Style: No Port
Grade: Automotive
Qualification: AEC-Q100
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CYT4DNJBMCQ1BZSGS Infineon-TRAVEO_T2G_CYT4DN-DataSheet-v01_00-EN.pdf?fileId=8ac78c8c869190210186f0cceff43fd0
Виробник: Infineon Technologies
Description: TRAVEO-2 CLUST.2.5DGRAPH
Packaging: Tray
Package / Case: 327-LFBGA
Mounting Type: Surface Mount
Speed: 100MHz, 320MHz
Program Memory Size: 6.19MB (6.19M x 8)
RAM Size: 640K x 8
Operating Temperature: -40°C ~ 105°C (TA)
Oscillator Type: External, Internal
Program Memory Type: FLASH
EEPROM Size: 128K x 8
Core Processor: ARM® Cortex®-M0+, ARM® Cortex®-M7F
Data Converters: A/D 48x12b SAR
Core Size: 32-Bit Tri-Core
Voltage - Supply (Vcc/Vdd): 2.7V ~ 5.5V
Connectivity: CANbus, Ethernet, I2C, LINbus, SPI, UART/USART
Peripherals: DMA, I2S, LVD, Temp Sensor, WDT
Supplier Device Package: 327-FBGA (17x17)
Number of I/O: 168
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S25HL01GTFAMHB010 en?dcId=8a8181663431cb50013431cb500b0000&downloadTitle=Infineon-S25HS256T_S25HS512T_S25HS01GT_S25HL256T_S25HL512T_S25HL01GT_256Mb_512Mb_1Gb_SEMPER_TM_Flash_Quad_SPI_1_8V_3-DataSheet-v68_00-EN.pdf&download=L2RnZGwvSW5maW5lb24
S25HL01GTFAMHB010
Виробник: Infineon Technologies
Description: IC FLASH 1GBIT SPI/QUAD 16SOIC
Packaging: Tray
Package / Case: 16-SOIC (0.295", 7.50mm Width)
Mounting Type: Surface Mount
Memory Size: 1Gbit
Memory Type: Non-Volatile
Operating Temperature: -40°C ~ 105°C (TA)
Voltage - Supply: 2.7V ~ 3.6V
Technology: FLASH - NOR (SLC)
Clock Frequency: 166 MHz
Memory Format: FLASH
Supplier Device Package: 16-SOIC
Memory Interface: SPI - Quad I/O, QPI
Memory Organization: 128M x 8
DigiKey Programmable: Not Verified
на замовлення 480 шт:
термін постачання 21-31 дні (днів)
Кількість Ціна
1+1742.03 грн
10+1489.14 грн
25+1420.11 грн
40+1300.59 грн
80+1254.58 грн
230+1187.44 грн
440+1129.08 грн
В кошику  од. на суму  грн.
S25HL01GTFAMHB013 en?dcId=8a8181663431cb50013431cb500b0000&downloadTitle=Infineon-S25HS256T_S25HS512T_S25HS01GT_S25HL256T_S25HL512T_S25HL01GT_256Mb_512Mb_1Gb_SEMPER_TM_Flash_Quad_SPI_1_8V_3-DataSheet-v68_00-EN.pdf&download=L2RnZGwvSW5maW5lb24
S25HL01GTFAMHB013
Виробник: Infineon Technologies
Description: IC FLASH 1GBIT SPI/QUAD 16SOIC
Packaging: Tape & Reel (TR)
Package / Case: 16-SOIC (0.295", 7.50mm Width)
Mounting Type: Surface Mount
Memory Size: 1Gbit
Memory Type: Non-Volatile
Operating Temperature: -40°C ~ 105°C (TA)
Voltage - Supply: 2.7V ~ 3.6V
Technology: FLASH - NOR (SLC)
Clock Frequency: 166 MHz
Memory Format: FLASH
Supplier Device Package: 16-SOIC
Memory Interface: SPI - Quad I/O, QPI
Memory Organization: 128M x 8
DigiKey Programmable: Not Verified
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FM22L16-55-TGTR Infineon-FM22L16_4_MBIT_(256K_X_16)_F-RAM-DataSheet-v09_00-EN.pdf?fileId=8ac78c8c7d0d8da4017d0ec87dbd40fc&utm_source=cypress&utm_medium=referral&utm_campaign=202110_globe_en_all_integration-files
FM22L16-55-TGTR
Виробник: Infineon Technologies
Description: IC FRAM 4MBIT PARALLEL 44TSOP II
Packaging: Cut Tape (CT)
Package / Case: 44-TSOP (0.400", 10.16mm Width)
Mounting Type: Surface Mount
Memory Size: 4Mbit
Memory Type: Non-Volatile
Operating Temperature: -40°C ~ 85°C (TA)
Voltage - Supply: 2.7V ~ 3.6V
Technology: FRAM (Ferroelectric RAM)
Memory Format: FRAM
Supplier Device Package: 44-TSOP II
Write Cycle Time - Word, Page: 110ns
Memory Interface: Parallel
Access Time: 110 ns
Memory Organization: 256K x 16
DigiKey Programmable: Not Verified
на замовлення 1850 шт:
термін постачання 21-31 дні (днів)
Кількість Ціна
1+2938.13 грн
10+2615.27 грн
25+2530.96 грн
50+2316.08 грн
100+2257.76 грн
250+2182.25 грн
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TLE42632GMXUMA1 Infineon-TLE4263-2GM-DataSheet-v01_00-EN.pdf?fileId=8ac78c8c8e7ead30018ec6d7d79f43f5
TLE42632GMXUMA1
Виробник: Infineon Technologies
Description: IC REG LIN 5V 180MA PG-DSO-14-61
Packaging: Tape & Reel (TR)
Package / Case: 14-SOIC (0.154", 3.90mm Width)
Output Type: Fixed
Mounting Type: Surface Mount
Current - Output: 180mA
Operating Temperature: -40°C ~ 150°C
Output Configuration: Positive
Voltage - Input (Max): 45V
Number of Regulators: 1
Supplier Device Package: PG-DSO-14-61
Voltage - Output (Min/Fixed): 5V
Control Features: Delay, Inhibit, Reset Output, Watchdog
Grade: Automotive
Protection Features: Over Temperature, Reverse Polarity, Short Circuit
Qualification: AEC-Q100
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TLE42632GSXUMA1 Infineon-TLE4263-2GS-DataSheet-v01_00-EN.pdf?fileId=8ac78c8c8e7ead30018ec6d7e1c743f8
TLE42632GSXUMA1
Виробник: Infineon Technologies
Description: IC REG LINEAR 5V 180MA 8DSO-62
Packaging: Tape & Reel (TR)
Package / Case: 8-SOIC (0.154", 3.90mm Width)
Output Type: Fixed
Mounting Type: Surface Mount
Current - Output: 180mA
Operating Temperature: -40°C ~ 150°C
Output Configuration: Positive
Voltage - Input (Max): 45V
Number of Regulators: 1
Supplier Device Package: PG-DSO-8-62
Voltage - Output (Min/Fixed): 5V
Control Features: Delay, Inhibit, Reset Output, Watchdog
Grade: Automotive
Protection Features: Over Temperature, Reverse Polarity, Short Circuit
Qualification: AEC-Q100
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IPA65R150CFDXKSA2 Infineon-IPX65R150CFD-DS-v02_00-en.pdf?fileId=db3a3043338c8ac80133ace218433063
IPA65R150CFDXKSA2
Виробник: Infineon Technologies
Description: MOSFET N-CH 650V 22.4A TO220
Packaging: Tube
Package / Case: TO-220-3 Full Pack
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 22.4A (Tc)
Rds On (Max) @ Id, Vgs: 150mOhm @ 9.3A, 10V
Power Dissipation (Max): 34.7W (Tc)
Vgs(th) (Max) @ Id: 4.5V @ 900µA
Supplier Device Package: PG-TO220-FP
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 650 V
Gate Charge (Qg) (Max) @ Vgs: 86 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 2340 pF @ 100 V
на замовлення 494 шт:
термін постачання 21-31 дні (днів)
Кількість Ціна
1+334.24 грн
50+165.73 грн
100+150.60 грн
В кошику  од. на суму  грн.
CYT4DNJBCCQ1BZSGS Infineon-TRAVEO_T2G_CYT4DN-DataSheet-v01_00-EN.pdf?fileId=8ac78c8c869190210186f0cceff43fd0
CYT4DNJBCCQ1BZSGS
Виробник: Infineon Technologies
Description: TRAVEO-2 CLUST.2.5DGRAPH
Packaging: Tray
Package / Case: 327-LFBGA
Mounting Type: Surface Mount
Speed: 100MHz, 320MHz
Program Memory Size: 6.19MB (6.19M x 8)
RAM Size: 640K x 8
Operating Temperature: -40°C ~ 105°C (TA)
Oscillator Type: External, Internal
Program Memory Type: FLASH
EEPROM Size: 128K x 8
Core Processor: ARM® Cortex®-M0+, ARM® Cortex®-M7F
Data Converters: A/D 48x12b SAR
Core Size: 32-Bit Tri-Core
Voltage - Supply (Vcc/Vdd): 2.7V ~ 5.5V
Connectivity: CANbus, Ethernet, I2C, LINbus, SPI, UART/USART
Peripherals: DMA, I2S, LVD, Temp Sensor, WDT
Supplier Device Package: 327-FBGA (17x17)
Number of I/O: 168
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CYT4DNJBCCQ1BZSGST Infineon-TRAVEO_T2G_CYT4DN-DataSheet-v01_00-EN.pdf?fileId=8ac78c8c869190210186f0cceff43fd0
CYT4DNJBCCQ1BZSGST
Виробник: Infineon Technologies
Description: TRAVEO-2 CLUST.2.5DGRAPH
Packaging: Tape & Reel (TR)
Package / Case: 327-LFBGA
Mounting Type: Surface Mount
Speed: 100MHz, 320MHz
Program Memory Size: 6.19MB (6.19M x 8)
RAM Size: 640K x 8
Operating Temperature: -40°C ~ 105°C (TA)
Oscillator Type: External, Internal
Program Memory Type: FLASH
EEPROM Size: 128K x 8
Core Processor: ARM® Cortex®-M0+, ARM® Cortex®-M7F
Data Converters: A/D 48x12b SAR
Core Size: 32-Bit Tri-Core
Voltage - Supply (Vcc/Vdd): 2.7V ~ 5.5V
Connectivity: CANbus, Ethernet, I2C, LINbus, SPI, UART/USART
Peripherals: DMA, I2S, LVD, Temp Sensor, WDT
Supplier Device Package: 327-FBGA (17x17)
Number of I/O: 168
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FF1500R12IE5BPSA1 Infineon-FF1500R12IE5-DS-v03_00-EN.pdf?fileId=5546d4625f2e26bc015f2e9197d90007
FF1500R12IE5BPSA1
Виробник: Infineon Technologies
Description: IGBT MOD 1200V 1500A 20MW
Packaging: Tray
Package / Case: Module
Mounting Type: Chassis Mount
Input: Standard
Configuration: 2 Independent
Operating Temperature: -40°C ~ 175°C (TJ)
Vce(on) (Max) @ Vge, Ic: 2.15V @ 15V, 1500A
NTC Thermistor: Yes
Supplier Device Package: Module
IGBT Type: Trench Field Stop
Current - Collector (Ic) (Max): 1500 A
Voltage - Collector Emitter Breakdown (Max): 1200 V
Power - Max: 20 mW
Current - Collector Cutoff (Max): 5 mA
Input Capacitance (Cies) @ Vce: 82 nF @ 25 V
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CY8C4125PVE-S412
CY8C4125PVE-S412
Виробник: Infineon Technologies
Description: IC MCU 32BIT 32KB FLASH 28SSOP
Packaging: Tube
Package / Case: 28-SSOP (0.209", 5.30mm Width)
Mounting Type: Surface Mount
Speed: 24MHz
Program Memory Size: 32KB (32K x 8)
RAM Size: 4K x 8
Operating Temperature: -40°C ~ 125°C (TA)
Oscillator Type: Internal
Program Memory Type: FLASH
Core Processor: ARM® Cortex®-M0+
Data Converters: A/D 16x10b, 12x12b SAR; D/A 2x7b
Core Size: 32-Bit
Voltage - Supply (Vcc/Vdd): 1.71V ~ 5.5V
Connectivity: I2C, IrDA, LINbus, Microwire, SmartCard, SPI, SSP, UART/USART
Peripherals: Brown-out Detect/Reset, CapSense, LCD, LVD, POR, PWM, WDT
Supplier Device Package: 28-SSOP
Grade: Automotive
Number of I/O: 24
Qualification: AEC-Q100
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CY8C4147AZS-S475T
CY8C4147AZS-S475T
Виробник: Infineon Technologies
Description: IC MCU 32BIT 128KB FLASH 64LQFP
Packaging: Tape & Reel (TR)
Package / Case: 64-LQFP
Mounting Type: Surface Mount
Speed: 24MHz
Program Memory Size: 128KB (128K x 8)
RAM Size: 16K x 8
Operating Temperature: -40°C ~ 105°C (TA)
Oscillator Type: Internal
Program Memory Type: FLASH
Core Processor: ARM® Cortex®-M0+
Data Converters: A/D 16, 20x10/12b SAR
Core Size: 32-Bit
Voltage - Supply (Vcc/Vdd): 1.71V ~ 5.5V
Connectivity: I2C, IrDA, LINbus, Microwire, SmartCard, SPI, SSP, UART/USART
Peripherals: Brown-out Detect/Reset, CapSense, LCD, POR, PWM, WDT
Supplier Device Package: 64-TQFP (10x10)
Grade: Automotive
Number of I/O: 54
Qualification: AEC-Q100
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CY8C24423A-24LTXIT Infineon-CY8C24123A_CY8C24223A_CY8C24423A_PSoC_Programmable_System-on-Chip-DataSheet-v24_00-EN.pdf?fileId=8ac78c8c7d0d8da4017d0ec6aaf93d0f
CY8C24423A-24LTXIT
Виробник: Infineon Technologies
Description: IC MCU 8BIT 4KB FLASH 32QFN
Packaging: Cut Tape (CT)
Package / Case: 32-UFQFN Exposed Pad
Mounting Type: Surface Mount
Speed: 24MHz
Program Memory Size: 4KB (4K x 8)
RAM Size: 256 x 8
Operating Temperature: -40°C ~ 85°C (TA)
Oscillator Type: Internal
Program Memory Type: FLASH
Core Processor: M8C
Data Converters: A/D 10x14b; D/A 2x9b
Core Size: 8-Bit
Voltage - Supply (Vcc/Vdd): 2.4V ~ 5.25V
Connectivity: I2C, SPI, UART/USART
Peripherals: POR, PWM, WDT
Supplier Device Package: 32-QFN (5x5)
Number of I/O: 24
DigiKey Programmable: Not Verified
на замовлення 2500 шт:
термін постачання 21-31 дні (днів)
Кількість Ціна
1+436.10 грн
10+321.94 грн
25+297.43 грн
100+253.83 грн
250+241.76 грн
500+234.49 грн
1000+224.76 грн
В кошику  од. на суму  грн.
CY8C24423A-24LFXI CY8C24x23A.pdf
CY8C24423A-24LFXI
Виробник: Infineon Technologies
Description: IC MCU 8BIT 4KB FLASH 32QFN
Packaging: Tube
Package / Case: 32-VFQFN Exposed Pad
Mounting Type: Surface Mount
Speed: 24MHz
Program Memory Size: 4KB (4K x 8)
RAM Size: 256 x 8
Operating Temperature: -40°C ~ 85°C (TA)
Oscillator Type: Internal
Program Memory Type: FLASH
Core Processor: M8C
Data Converters: A/D 10x14b; D/A 2x9b
Core Size: 8-Bit
Voltage - Supply (Vcc/Vdd): 2.4V ~ 5.25V
Connectivity: I2C, SPI, UART/USART
Peripherals: POR, PWM, WDT
Supplier Device Package: 32-QFN (5x5)
Number of I/O: 24
DigiKey Programmable: Not Verified
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CY3250-20SSOP-FK
CY3250-20SSOP-FK
Виробник: Infineon Technologies
Description: PSOC POD FEET FOR 20-SSOP
Packaging: Bulk
For Use With/Related Products: CY3215-DK, CY8C21334-24PVXI, CY8C21323-24PVXI, CY8C27243-24PVXI, CY8C24423A-24PVXI
Accessory Type: 4 Emulation Pods
товару немає в наявності
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IPP60R037CM8XKSA1
IPP60R037CM8XKSA1
Виробник: Infineon Technologies
Description: IPP60R037CM8XKSA1
Packaging: Tube
Package / Case: TO-220-3
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 70A (Tj)
Rds On (Max) @ Id, Vgs: 37mOhm @ 27A, 10V
Power Dissipation (Max): 390W (Tc)
Vgs(th) (Max) @ Id: 4.7V @ 680µA
Supplier Device Package: PG-TO220-3-1
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 600 V
Gate Charge (Qg) (Max) @ Vgs: 79 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 3458 pF @ 400 V
на замовлення 252 шт:
термін постачання 21-31 дні (днів)
Кількість Ціна
1+489.42 грн
50+345.83 грн
100+311.46 грн
В кошику  од. на суму  грн.
IPP018N03LF2SAKSA1 Infineon-IPP018N03LF2S-DataSheet-v02_00-EN.pdf?fileId=8ac78c8c901008d1019030cd1e162b8f
IPP018N03LF2SAKSA1
Виробник: Infineon Technologies
Description: TRENCH <= 40V
Packaging: Tube
Package / Case: TO-220-3
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 35A (Ta), 128A (Tc)
Rds On (Max) @ Id, Vgs: 1.8mOhm @ 100A, 10V
Power Dissipation (Max): 3.8W (Ta), 167W (Tc)
Vgs(th) (Max) @ Id: 2.35V @ 110µA
Supplier Device Package: PG-TO220-3-U05
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 30 V
Gate Charge (Qg) (Max) @ Vgs: 143 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 6400 pF @ 15 V
на замовлення 1953 шт:
термін постачання 21-31 дні (днів)
Кількість Ціна
4+101.07 грн
10+72.96 грн
100+60.89 грн
500+48.45 грн
1000+44.46 грн
Мінімальне замовлення: 4
В кошику  од. на суму  грн.
IPD06P003NATMA1 IPD06P003N.pdf
IPD06P003NATMA1
Виробник: Infineon Technologies
Description: MOSFET P-CH 60V 22A TO252-3
Packaging: Tape & Reel (TR)
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: P-Channel
Current - Continuous Drain (Id) @ 25°C: 22A (Tc)
Rds On (Max) @ Id, Vgs: 65mOhm @ 22A, 10V
Power Dissipation (Max): 83W (Tc)
Vgs(th) (Max) @ Id: 4V @ 1.04mA
Supplier Device Package: PG-TO252-3
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 60 V
Gate Charge (Qg) (Max) @ Vgs: 39 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 1600 pF @ 30 V
товару немає в наявності
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S29GL512T10TFI040 Infineon-S29GL01GT_S29GL512T_1-Gb_(128_MB)_512-Mb_(64_MB)_GL-T_MirrorBit_Eclipse_Flash-DataSheet-v13_00-EN.pdf?fileId=8ac78c8c7d0d8da4017d0ed2abb34fce&utm_source=cypress&utm_medium=referral&utm_campaign=202110_globe_en_all_in
S29GL512T10TFI040
Виробник: Infineon Technologies
Description: IC FLASH 512MBIT PARALLEL 56TSOP
Packaging: Tray
Package / Case: 56-TFSOP (0.724", 18.40mm Width)
Mounting Type: Surface Mount
Memory Size: 512Mbit
Memory Type: Non-Volatile
Operating Temperature: -40°C ~ 85°C (TA)
Voltage - Supply: 2.7V ~ 3.6V
Technology: FLASH - NOR
Memory Format: FLASH
Supplier Device Package: 56-TSOP
Write Cycle Time - Word, Page: 60ns
Memory Interface: Parallel
Access Time: 100 ns
Memory Organization: 64M x 8
DigiKey Programmable: Not Verified
на замовлення 268 шт:
термін постачання 21-31 дні (днів)
Кількість Ціна
1+771.94 грн
10+690.24 грн
25+668.98 грн
40+617.56 грн
91+599.77 грн
В кошику  од. на суму  грн.
IM64D121AXTMA1
IM64D121AXTMA1
Виробник: Infineon Technologies
Description: XENSIV - IM64D121A AUTOMOTIVE ME
Packaging: Tape & Reel (TR)
Output Type: Digital, PDM
Size / Dimension: 0.138" L x 0.104" W (3.50mm x 2.65mm)
Sensitivity: -26dB ±1dB @ 94dB SPL
Shape: Rectangular
Type: MEMS (Silicon)
S/N Ratio: 64dB
Termination: Solder Pads
Direction: Omnidirectional
Ratings: IP57 - Dust Protected, Waterproof
Port Location: Bottom
Height (Max): 0.043" (1.08mm)
Grade: Automotive
Voltage - Rated: 1.8 V
Current - Supply: 1.4 A
Voltage Range: 1.62 V ~ 3.6 V
Frequency Range: 10 Hz ~ 10 kHz
Qualification: AEC-Q103
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IM64D121AXTMA1
IM64D121AXTMA1
Виробник: Infineon Technologies
Description: XENSIV - IM64D121A AUTOMOTIVE ME
Packaging: Cut Tape (CT)
Output Type: Digital, PDM
Size / Dimension: 0.138" L x 0.104" W (3.50mm x 2.65mm)
Sensitivity: -26dB ±1dB @ 94dB SPL
Shape: Rectangular
Type: MEMS (Silicon)
S/N Ratio: 64dB
Termination: Solder Pads
Direction: Omnidirectional
Ratings: IP57 - Dust Protected, Waterproof
Port Location: Bottom
Height (Max): 0.043" (1.08mm)
Grade: Automotive
Voltage - Rated: 1.8 V
Current - Supply: 1.4 A
Voltage Range: 1.62 V ~ 3.6 V
Frequency Range: 10 Hz ~ 10 kHz
Qualification: AEC-Q103
на замовлення 4718 шт:
термін постачання 21-31 дні (днів)
Кількість Ціна
3+125.74 грн
10+98.78 грн
25+91.04 грн
50+80.33 грн
100+75.53 грн
250+69.64 грн
500+64.44 грн
1000+60.64 грн
Мінімальне замовлення: 3
В кошику  од. на суму  грн.
ESD160B1W0201E6327XTSA1
Виробник: Infineon Technologies
Description: TVS DIODES
Packaging: Tape & Reel (TR)
товару немає в наявності
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ESD160B1W0201E6327XTSA1
Виробник: Infineon Technologies
Description: TVS DIODES
Packaging: Cut Tape (CT)
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CYTVII-B-H-8M-176-CPU Infineon-002-25907_0C_CYTVII-B-H-8M-176-CPU_EVALUATION_BOARD-UserManual-v01_00-EN.pdf?fileId=8ac78c8c8b6555fe018baddfdf637dd4
CYTVII-B-H-8M-176-CPU
Виробник: Infineon Technologies
Description: CPU_BOARD FOR TVII-B-H-4M-176
Packaging: Bulk
Mounting Type: Socket
Type: MCU 32-Bit
Contents: Board(s)
Core Processor: ARM® Cortex®-M7
Utilized IC / Part: CYT4BF
на замовлення 3 шт:
термін постачання 21-31 дні (днів)
Кількість Ціна
1+55054.11 грн
В кошику  од. на суму  грн.
IPA60R1K5CEXKSA1 Infineon-IPA60R1K5CE-DS-v02_00-EN.pdf?fileId=5546d462533600a401537a8c69e87218
IPA60R1K5CEXKSA1
Виробник: Infineon Technologies
Description: MOSFET N-CH 600V 5A TO220
Packaging: Tube
Package / Case: TO-220-3 Full Pack
Mounting Type: Through Hole
Operating Temperature: -40°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 5A (Tc)
Rds On (Max) @ Id, Vgs: 1.5Ohm @ 1.1A, 10V
Power Dissipation (Max): 20W (Tc)
Vgs(th) (Max) @ Id: 3.5V @ 90µA
Supplier Device Package: PG-TO220-FP
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 600 V
Gate Charge (Qg) (Max) @ Vgs: 9.4 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 200 pF @ 100 V
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TLE49SRC8XUMA1 TLE49SR.pdf
Виробник: Infineon Technologies
Description: POSITION SENSORS
Packaging: Tape & Reel (TR)
Features: Temperature Compensated
Package / Case: 8-SOIC (0.154", 3.90mm Width)
Output Type: SPC
Mounting Type: Surface Mount
Axis: X, Y, Z
Operating Temperature: -40°C ~ 125°C
Voltage - Supply: 4.5V ~ 5.5V
Technology: Hall Effect
Resolution: 14 b
Sensing Range: 20mT ~ 90mT
Current - Output (Max): 120µA
Current - Supply (Max): 16.5mA
Supplier Device Package: PG-TDSO-8-1
Grade: Automotive
Qualification: AEC-Q100
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TLE49SRC8XUMA1 TLE49SR.pdf
Виробник: Infineon Technologies
Description: POSITION SENSORS
Features: Temperature Compensated
Packaging: Cut Tape (CT)
Package / Case: 8-SOIC (0.154", 3.90mm Width)
Output Type: SPC
Mounting Type: Surface Mount
Axis: X, Y, Z
Operating Temperature: -40°C ~ 125°C
Voltage - Supply: 4.5V ~ 5.5V
Technology: Hall Effect
Resolution: 14 b
Sensing Range: 20mT ~ 90mT
Current - Output (Max): 120µA
Current - Supply (Max): 16.5mA
Supplier Device Package: PG-TDSO-8-1
Grade: Automotive
Qualification: AEC-Q100
на замовлення 300 шт:
термін постачання 21-31 дні (днів)
Кількість Ціна
1+524.44 грн
5+425.62 грн
10+395.43 грн
25+336.78 грн
50+312.97 грн
100+290.86 грн
В кошику  од. на суму  грн.
TLE49SRP8XUMA1 TLE49SR.pdf
Виробник: Infineon Technologies
Description: POSITION SENSORS
Features: Temperature Compensated
Packaging: Tape & Reel (TR)
Package / Case: 8-SOIC (0.154", 3.90mm Width)
Output Type: PWM
Mounting Type: Surface Mount
Axis: X, Y, Z
Operating Temperature: -40°C ~ 125°C
Voltage - Supply: 4.5V ~ 5.5V
Technology: Hall Effect
Resolution: 14 b
Sensing Range: 20mT ~ 90mT
Current - Output (Max): 120µA
Current - Supply (Max): 16.5mA
Supplier Device Package: PG-TDSO-8-1
Grade: Automotive
Qualification: AEC-Q100
товару немає в наявності
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TLE49SRP8XUMA1 TLE49SR.pdf
Виробник: Infineon Technologies
Description: POSITION SENSORS
Features: Temperature Compensated
Packaging: Cut Tape (CT)
Package / Case: 8-SOIC (0.154", 3.90mm Width)
Output Type: PWM
Mounting Type: Surface Mount
Axis: X, Y, Z
Operating Temperature: -40°C ~ 125°C
Voltage - Supply: 4.5V ~ 5.5V
Technology: Hall Effect
Resolution: 14 b
Sensing Range: 20mT ~ 90mT
Current - Output (Max): 120µA
Current - Supply (Max): 16.5mA
Supplier Device Package: PG-TDSO-8-1
Grade: Automotive
Qualification: AEC-Q100
на замовлення 300 шт:
термін постачання 21-31 дні (днів)
Кількість Ціна
1+511.71 грн
5+415.51 грн
10+386.08 грн
25+328.81 грн
50+305.55 грн
100+283.97 грн
В кошику  од. на суму  грн.
S29GL128S10GHB013 Infineon-S29GL01GS_S29GL512S_S29GL256S_S29GL128S_128_Mb_256_Mb_512_Mb_1_Gb_GL-S_MIRRORBIT_TM_Flash_Parallel_3-DataSheet-v20_00-EN.pdf?fileId=8ac78c8c7d0d8da4017d0ed07ac14bd5
S29GL128S10GHB013
Виробник: Infineon Technologies
Description: IC FLASH 128MBIT CFI 56FBGA
Packaging: Cut Tape (CT)
Package / Case: 56-VFBGA
Mounting Type: Surface Mount
Memory Size: 128Mbit
Memory Type: Non-Volatile
Operating Temperature: -40°C ~ 105°C (TA)
Voltage - Supply: 2.7V ~ 3.6V
Technology: FLASH - NOR (SLC)
Memory Format: FLASH
Supplier Device Package: 56-FBGA (9x7)
Grade: Automotive
Write Cycle Time - Word, Page: 60ns
Memory Interface: CFI
Access Time: 100 ns
Memory Organization: 16M x 8
Qualification: AEC-Q100
на замовлення 2700 шт:
термін постачання 21-31 дні (днів)
Кількість Ціна
1+463.96 грн
10+415.43 грн
25+402.82 грн
50+369.11 грн
100+360.21 грн
250+348.56 грн
500+334.29 грн
1000+325.85 грн
В кошику  од. на суму  грн.
IPP020N03LF2SAKSA1 Infineon-IPP020N03LF2S-DataSheet-v02_01-EN.pdf?fileId=8ac78c8c901008d101902fe2ba53256d
IPP020N03LF2SAKSA1
Виробник: Infineon Technologies
Description: TRENCH <= 40V
Packaging: Tube
Package / Case: TO-220-3
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 33A (Ta), 125A (Tc)
Rds On (Max) @ Id, Vgs: 2.05mOhm @ 70A, 10V
Power Dissipation (Max): 3.8W (Ta), 136W (Tc)
Vgs(th) (Max) @ Id: 2.35V @ 80µA
Supplier Device Package: PG-TO220-3-U05
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 30 V
Gate Charge (Qg) (Max) @ Vgs: 104 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 4700 pF @ 15 V
на замовлення 877 шт:
термін постачання 21-31 дні (днів)
Кількість Ціна
3+113.80 грн
10+77.09 грн
100+57.29 грн
500+43.86 грн
Мінімальне замовлення: 3
В кошику  од. на суму  грн.
TLD5098EPVSEPICTOBO1 Infineon-TLD5098EP_VSEPIC-UserManual-v01_00-EN.pdf?fileId=5546d46274dd77260174eb6fd9eb0ae7
TLD5098EPVSEPICTOBO1
Виробник: Infineon Technologies
Description: EVAL BOARD FOR TLD5098EP
Packaging: Bulk
Voltage - Output: 12V
Voltage - Input: 8V ~ 27V
Current - Output: 1A
Contents: Board(s)
Frequency - Switching: 400kHz
Regulator Topology: Buck-Boost
Board Type: Fully Populated
Utilized IC / Part: TLD5098EP
Supplied Contents: Board(s)
Main Purpose: DC/DC, Step Up or Down
Outputs and Type: 1 Non-Isolated Output
на замовлення 3 шт:
термін постачання 21-31 дні (днів)
Кількість Ціна
1+5131.38 грн
В кошику  од. на суму  грн.
IMT65R107M1HXUMA1 Infineon-IMT65R107M1H-DataSheet-v02_00-EN.pdf?fileId=8ac78c8c872bd8d601876f66b5d971d0
IMT65R107M1HXUMA1
Виробник: Infineon Technologies
Description: SILICON CARBIDE MOSFET
Packaging: Tape & Reel (TR)
Package / Case: 8-PowerSFN
Mounting Type: Surface Mount
Technology: SiCFET (Silicon Carbide)
Supplier Device Package: PG-HSOF-8-2
Drive Voltage (Max Rds On, Min Rds On): 18V
Drain to Source Voltage (Vdss): 650 V
на замовлення 2000 шт:
термін постачання 21-31 дні (днів)
Кількість Ціна
2000+197.39 грн
Мінімальне замовлення: 2000
В кошику  од. на суму  грн.
IMT65R107M1HXUMA1 Infineon-IMT65R107M1H-DataSheet-v02_00-EN.pdf?fileId=8ac78c8c872bd8d601876f66b5d971d0
IMT65R107M1HXUMA1
Виробник: Infineon Technologies
Description: SILICON CARBIDE MOSFET
Packaging: Cut Tape (CT)
Package / Case: 8-PowerSFN
Mounting Type: Surface Mount
Technology: SiCFET (Silicon Carbide)
Supplier Device Package: PG-HSOF-8-2
Drive Voltage (Max Rds On, Min Rds On): 18V
Drain to Source Voltage (Vdss): 650 V
на замовлення 2479 шт:
термін постачання 21-31 дні (днів)
Кількість Ціна
1+476.69 грн
10+308.53 грн
100+224.67 грн
В кошику  од. на суму  грн.
ETD540N22P60XPSA1 Infineon-DS_eTT540N22P60-DS-v03_01-EN.pdf?fileId=5546d46266f85d6301670d4da56a366a
Виробник: Infineon Technologies
Description: THYR / DIODE MODULE DK
Packaging: Tray
Package / Case: Module
Mounting Type: Chassis Mount
Operating Temperature: 135°C (TJ)
Structure: Series Connection - SCR/Diode
Current - Hold (Ih) (Max): 300 mA
Current - Gate Trigger (Igt) (Max): 250 mA
Current - Non Rep. Surge 50, 60Hz (Itsm): 16300A @ 50Hz
Number of SCRs, Diodes: 1 SCR, 1 Diode
Current - On State (It (AV)) (Max): 542 A
Voltage - Gate Trigger (Vgt) (Max): 2.2 V
Current - On State (It (RMS)) (Max): 700 A
Voltage - Off State: 2.2 kV
товару немає в наявності
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FD401R17KF6CB2NOSA1 INFNS28314-1.pdf?t.download=true&u=ovmfp3
Виробник: Infineon Technologies
Description: FD401R17 - IGBT MODULE
Packaging: Bulk
на замовлення 28 шт:
термін постачання 21-31 дні (днів)
Кількість Ціна
1+61022.68 грн
В кошику  од. на суму  грн.
CYPAP111A3-10SXQT Infineon-PAG1P_Datasheet_Primary_Side_Startup_Controller-DataSheet-v07_00-EN.pdf?fileId=8ac78c8c7d0d8da4017d0ee9bdef7294
CYPAP111A3-10SXQT
Виробник: Infineon Technologies
Description: PRIMARY SIDE STARTUP CONTROLLER
Packaging: Cut Tape (CT)
Package / Case: 10-SOP (0.154", 3.90mm Width)
Output Connector: USB Micro
Mounting Type: Surface Mount
Voltage - Input: 85 ~ 265 VAC
Operating Temperature: -40°C ~ 125°C (TJ)
Duty Cycle: 70%
Frequency - Switching: 30kHz
Input Type: Fixed Blade
Internal Switch(s): No
Voltage - Breakdown: 500V
Form: Wall Mount (Class II)
Output Isolation: Isolated
Topology: Flyback, Secondary Side SR
Voltage - Supply (Vcc/Vdd): 85V ~ 265V
Supplier Device Package: 10-SOIC
Input Connector: NEMA 1-15P
Region Utilized: North America
Fault Protection: Current Limiting, Over Temperature, Over Voltage, Short Circuit, UVLO
Control Features: Frequency Control, Soft Start
на замовлення 2500 шт:
термін постачання 21-31 дні (днів)
Кількість Ціна
4+93.11 грн
10+64.76 грн
25+58.61 грн
100+48.63 грн
250+45.60 грн
500+43.77 грн
1000+41.58 грн
Мінімальне замовлення: 4
В кошику  од. на суму  грн.
BCR420UE6433HTMA1 Infineon-BCR420U-BCR421U-DataSheet-v02_01-EN.pdf?fileId=5546d4626102d35a01617524f09e061d
BCR420UE6433HTMA1
Виробник: Infineon Technologies
Description: IC LED DRIVER LINEAR 65MA SC74-6
Packaging: Tape & Reel (TR)
Package / Case: SC-74, SOT-457
Voltage - Output: 40V
Mounting Type: Surface Mount
Number of Outputs: 1
Type: Linear
Applications: Lighting
Current - Output / Channel: 65mA
Internal Switch(s): Yes
Supplier Device Package: PG-SC74-6
Voltage - Supply (Max): 40V
Grade: Automotive
Qualification: AEC-Q101
на замовлення 130000 шт:
термін постачання 21-31 дні (днів)
Кількість Ціна
10000+8.94 грн
Мінімальне замовлення: 10000
В кошику  од. на суму  грн.
BCR420UE6433HTMA1 Infineon-BCR420U-BCR421U-DataSheet-v02_01-EN.pdf?fileId=5546d4626102d35a01617524f09e061d
BCR420UE6433HTMA1
Виробник: Infineon Technologies
Description: IC LED DRIVER LINEAR 65MA SC74-6
Packaging: Cut Tape (CT)
Package / Case: SC-74, SOT-457
Voltage - Output: 40V
Mounting Type: Surface Mount
Number of Outputs: 1
Type: Linear
Applications: Lighting
Current - Output / Channel: 65mA
Internal Switch(s): Yes
Supplier Device Package: PG-SC74-6
Voltage - Supply (Max): 40V
Grade: Automotive
Qualification: AEC-Q101
на замовлення 132616 шт:
термін постачання 21-31 дні (днів)
Кількість Ціна
13+24.67 грн
19+16.55 грн
25+14.71 грн
100+11.89 грн
250+10.98 грн
500+10.43 грн
1000+9.82 грн
2500+9.35 грн
5000+9.07 грн
Мінімальне замовлення: 13
В кошику  од. на суму  грн.
IPA082N10NF2SXKSA1 Infineon-IPA082N10NF2S-DataSheet-v02_01-EN.pdf?fileId=5546d46278d64ffd0179176be5971162
IPA082N10NF2SXKSA1
Виробник: Infineon Technologies
Description: TRENCH >=100V PG-TO220-3
Packaging: Bulk
Package / Case: TO-220-3 Full Pack
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 46A (Tc)
Rds On (Max) @ Id, Vgs: 8.2mOhm @ 30A, 10V
Power Dissipation (Max): 35W (Tc)
Vgs(th) (Max) @ Id: 3.8V @ 46µA
Supplier Device Package: PG-TO220 Full Pack
Drive Voltage (Max Rds On, Min Rds On): 6V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 100 V
Gate Charge (Qg) (Max) @ Vgs: 42 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 2000 pF @ 50 V
на замовлення 3000 шт:
термін постачання 21-31 дні (днів)
Кількість Ціна
412+55.61 грн
Мінімальне замовлення: 412
В кошику  од. на суму  грн.
BTS700121ESPXUMA2 Infineon-BTS70012-1ESP-DataSheet-v01_20-EN.pdf?fileId=5546d462758f5bd1017598473e2a39a7
BTS700121ESPXUMA2
Виробник: Infineon Technologies
Description: PROFET PG-TSDSO-24
Features: Slew Rate Controlled
Packaging: Cut Tape (CT)
Package / Case: 24-TSSOP (0.154", 3.90mm Width) Exposed Pad
Output Type: N-Channel
Mounting Type: Surface Mount
Number of Outputs: 1
Switch Type: Relay, Solenoid Driver
Operating Temperature: -40°C ~ 150°C (TJ)
Output Configuration: High Side
Rds On (Typ): 1.4mOhm
Input Type: Non-Inverting
Voltage - Load: 4.1V ~ 28V
Voltage - Supply (Vcc/Vdd): 4.1V ~ 28V
Current - Output (Max): 31.3A
Ratio - Input:Output: 1:1
Supplier Device Package: PG-TSDSO-24-32
Fault Protection: Current Limiting (Fixed), Open Load Detect, Over Temperature, Over Voltage, Reverse Battery, UVLO
на замовлення 3069 шт:
термін постачання 21-31 дні (днів)
Кількість Ціна
1+337.42 грн
10+247.30 грн
25+227.69 грн
100+193.52 грн
250+183.90 грн
500+178.10 грн
1000+170.49 грн
В кошику  од. на суму  грн.
BSC026N02KSGAUMA1 BSC026N02KS+G+Rev1.05.pdf?folderId=db3a3043163797a6011637c252b10018&fileId=db3a3043163797a6011637c2a4280019
BSC026N02KSGAUMA1
Виробник: Infineon Technologies
Description: MOSFET N-CH 20V 25A/100A TDSON
Packaging: Bulk
Package / Case: 8-PowerTDFN
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 25A (Ta), 100A (Tc)
Rds On (Max) @ Id, Vgs: 2.6mOhm @ 50A, 4.5V
Power Dissipation (Max): 2.8W (Ta), 78W (Tc)
Vgs(th) (Max) @ Id: 1.2V @ 200µA
Supplier Device Package: PG-TDSON-8-1
Drive Voltage (Max Rds On, Min Rds On): 2.5V, 4.5V
Vgs (Max): ±12V
Drain to Source Voltage (Vdss): 20 V
Gate Charge (Qg) (Max) @ Vgs: 52.7 nC @ 4.5 V
Input Capacitance (Ciss) (Max) @ Vds: 7800 pF @ 10 V
на замовлення 26892 шт:
термін постачання 21-31 дні (днів)
Кількість Ціна
363+59.33 грн
Мінімальне замовлення: 363
В кошику  од. на суму  грн.
S29GL01GS11FHIV13 Infineon-1_GBIT_(128_MBYTE)_512_MBIT_(64_MBYTE)_256_MBIT_(32_MBYTE)_128_MBIT_(16_MBYTE)_3.0_V_GL-S_FLASH_MEMORY-DataSheet-v19_00-EN.pdf?fileId=8ac78c8c7d0d8da4017d0ed07ac14bd5&utm_source=cypress&utm_medium=referral&utm_campai
S29GL01GS11FHIV13
Виробник: Infineon Technologies
Description: IC FLASH 1GBIT PARALLEL 64FBGA
Packaging: Tape & Reel (TR)
Package / Case: 64-LBGA
Mounting Type: Surface Mount
Memory Size: 1Gbit
Memory Type: Non-Volatile
Operating Temperature: -40°C ~ 85°C (TA)
Voltage - Supply: 1.65V ~ 3.6V
Technology: FLASH - NOR
Memory Format: FLASH
Supplier Device Package: 64-FBGA (13x11)
Write Cycle Time - Word, Page: 60ns
Memory Interface: Parallel
Access Time: 110 ns
Memory Organization: 64M x 16
DigiKey Programmable: Not Verified
на замовлення 1600 шт:
термін постачання 21-31 дні (днів)
Кількість Ціна
1600+717.44 грн
Мінімальне замовлення: 1600
В кошику  од. на суму  грн.
S29GL01GS11FHIV13 Infineon-1_GBIT_(128_MBYTE)_512_MBIT_(64_MBYTE)_256_MBIT_(32_MBYTE)_128_MBIT_(16_MBYTE)_3.0_V_GL-S_FLASH_MEMORY-DataSheet-v19_00-EN.pdf?fileId=8ac78c8c7d0d8da4017d0ed07ac14bd5&utm_source=cypress&utm_medium=referral&utm_campai
S29GL01GS11FHIV13
Виробник: Infineon Technologies
Description: IC FLASH 1GBIT PARALLEL 64FBGA
Packaging: Cut Tape (CT)
Package / Case: 64-LBGA
Mounting Type: Surface Mount
Memory Size: 1Gbit
Memory Type: Non-Volatile
Operating Temperature: -40°C ~ 85°C (TA)
Voltage - Supply: 1.65V ~ 3.6V
Technology: FLASH - NOR
Memory Format: FLASH
Supplier Device Package: 64-FBGA (13x11)
Write Cycle Time - Word, Page: 60ns
Memory Interface: Parallel
Access Time: 110 ns
Memory Organization: 64M x 16
DigiKey Programmable: Not Verified
на замовлення 1600 шт:
термін постачання 21-31 дні (днів)
Кількість Ціна
1+1053.65 грн
10+899.83 грн
25+858.05 грн
50+776.75 грн
100+749.26 грн
250+714.35 грн
500+677.69 грн
В кошику  од. на суму  грн.
IR2308SPBF ir2308.pdf?fileId=5546d462533600a4015355c9a2b816e2
IR2308SPBF
Виробник: Infineon Technologies
Description: IC GATE DRVR HALF-BRIDGE 8SOIC
Packaging: Tube
Package / Case: 8-SOIC (0.154", 3.90mm Width)
Mounting Type: Surface Mount
Operating Temperature: -40°C ~ 150°C (TJ)
Voltage - Supply: 10V ~ 20V
Input Type: Non-Inverting
High Side Voltage - Max (Bootstrap): 600 V
Supplier Device Package: 8-SOIC
Rise / Fall Time (Typ): 150ns, 50ns
Channel Type: Independent
Driven Configuration: Half-Bridge
Number of Drivers: 2
Gate Type: IGBT, N-Channel MOSFET
Logic Voltage - VIL, VIH: 0.8V, 2.9V
Current - Peak Output (Source, Sink): 200mA, 350mA
DigiKey Programmable: Not Verified
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IR2308PBF ir2308.pdf?fileId=5546d462533600a4015355c9a2b816e2
IR2308PBF
Виробник: Infineon Technologies
Description: IC GATE DRVR HALF-BRIDGE 8DIP
Packaging: Tube
Package / Case: 8-DIP (0.300", 7.62mm)
Mounting Type: Through Hole
Operating Temperature: -40°C ~ 150°C (TJ)
Voltage - Supply: 10V ~ 20V
Input Type: Non-Inverting
High Side Voltage - Max (Bootstrap): 600 V
Supplier Device Package: 8-PDIP
Rise / Fall Time (Typ): 150ns, 50ns
Channel Type: Independent
Driven Configuration: Half-Bridge
Number of Drivers: 2
Gate Type: IGBT, N-Channel MOSFET
Logic Voltage - VIL, VIH: 0.8V, 2.9V
Current - Peak Output (Source, Sink): 200mA, 350mA
DigiKey Programmable: Not Verified
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CY8C4126AZI-M475 download
CY8C4126AZI-M475
Виробник: Infineon Technologies
Description: IC MCU 32BIT 64KB FLASH 64TQFP
Packaging: Tray
Package / Case: 64-LQFP
Mounting Type: Surface Mount
Speed: 24MHz
Program Memory Size: 64KB (64K x 8)
RAM Size: 8K x 8
Operating Temperature: -40°C ~ 85°C (TA)
Oscillator Type: Internal
Program Memory Type: FLASH
Core Processor: ARM® Cortex®-M0
Data Converters: A/D 16x12b SAR; 2xIDAC
Core Size: 32-Bit Single-Core
Voltage - Supply (Vcc/Vdd): 1.71V ~ 5.5V
Connectivity: I2C, IrDA, LINbus, Microwire, SmartCard, SPI, SSP, UART/USART
Peripherals: Brown-out Detect/Reset, CapSense, LCD, LVD, POR, PWM, WDT
Supplier Device Package: 64-TQFP (10x10)
Number of I/O: 51
DigiKey Programmable: Not Verified
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IRS2003PBF irs2003pbf.pdf?fileId=5546d462533600a401535675afec2780
IRS2003PBF
Виробник: Infineon Technologies
Description: IC GATE DRVR HALF-BRIDGE 8DIP
Packaging: Tube
Package / Case: 8-DIP (0.300", 7.62mm)
Mounting Type: Through Hole
Operating Temperature: -40°C ~ 150°C (TJ)
Voltage - Supply: 10V ~ 20V
Input Type: Inverting, Non-Inverting
High Side Voltage - Max (Bootstrap): 200 V
Supplier Device Package: 8-PDIP
Rise / Fall Time (Typ): 70ns, 35ns
Channel Type: Independent
Driven Configuration: Half-Bridge
Number of Drivers: 2
Gate Type: IGBT, MOSFET (N-Channel)
Logic Voltage - VIL, VIH: 0.8V, 2.5V
Current - Peak Output (Source, Sink): 290mA, 600mA
DigiKey Programmable: Not Verified
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IR2109PBF ir2109.pdf?fileId=5546d462533600a4015355c7e85b1679
IR2109PBF
Виробник: Infineon Technologies
Description: IC GATE DRVR HALF-BRIDGE 8DIP
Packaging: Tube
Package / Case: 8-DIP (0.300", 7.62mm)
Mounting Type: Through Hole
Operating Temperature: -40°C ~ 150°C (TJ)
Voltage - Supply: 10V ~ 20V
Input Type: Non-Inverting
High Side Voltage - Max (Bootstrap): 600 V
Supplier Device Package: 8-PDIP
Rise / Fall Time (Typ): 150ns, 50ns
Channel Type: Synchronous
Driven Configuration: Half-Bridge
Number of Drivers: 2
Gate Type: IGBT, MOSFET (N-Channel)
Logic Voltage - VIL, VIH: 0.8V, 2.9V
Current - Peak Output (Source, Sink): 200mA, 350mA
DigiKey Programmable: Not Verified
на замовлення 387 шт:
термін постачання 21-31 дні (днів)
Кількість Ціна
2+243.52 грн
10+176.49 грн
50+153.02 грн
100+136.80 грн
250+129.60 грн
Мінімальне замовлення: 2
В кошику  од. на суму  грн.
IAUTN06S5N008GATMA1 Infineon-IAUTN06S5N008G-DataSheet-v02_00-EN.pdf?fileId=8ac78c8c85ecb34701863141615f0dfd
IAUTN06S5N008GATMA1
Виробник: Infineon Technologies
Description: MOSFET_)40V 60V)
Packaging: Tape & Reel (TR)
товару немає в наявності
В кошику  од. на суму  грн.
IAUTN06S5N008GATMA1 Infineon-IAUTN06S5N008G-DataSheet-v02_00-EN.pdf?fileId=8ac78c8c85ecb34701863141615f0dfd
IAUTN06S5N008GATMA1
Виробник: Infineon Technologies
Description: MOSFET_)40V 60V)
Packaging: Cut Tape (CT)
на замовлення 1790 шт:
термін постачання 21-31 дні (днів)
Кількість Ціна
1+519.66 грн
10+338.87 грн
100+247.06 грн
500+199.95 грн
В кошику  од. на суму  грн.
IAUTN06S5N008ATMA1 Infineon-IAUTN06S5N008_Datasheet-DataSheet-v02_00-EN.pdf?fileId=8ac78c8c85ecb3470186314156af0dfa
IAUTN06S5N008ATMA1
Виробник: Infineon Technologies
Description: MOSFET_)40V 60V)
Packaging: Tape & Reel (TR)
товару немає в наявності
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IAUTN06S5N008ATMA1 Infineon-IAUTN06S5N008_Datasheet-DataSheet-v02_00-EN.pdf?fileId=8ac78c8c85ecb3470186314156af0dfa
IAUTN06S5N008ATMA1
Виробник: Infineon Technologies
Description: MOSFET_)40V 60V)
Packaging: Cut Tape (CT)
товару немає в наявності
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S6BP401AM2SN1B200 Infineon-S6BP401A_Power_Management_IC_for_Automotive_ADAS_Platform-DataSheet-v10_00-EN.pdf?fileId=8ac78c8c7d0d8da4017d0ed50c9b53cf
Виробник: Infineon Technologies
Description: PMIC AUTO ANALOG
Packaging: Tape & Reel (TR)
товару немає в наявності
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FS200R07A02E3S6BKSA3 Infineon-FS200R07A02E3_S6-DataSheet-v03_01-EN.pdf?fileId=5546d462636cc8fb016402b5998407c4
Виробник: Infineon Technologies
Description: HYBRID PACK DSC SI
Packaging: Tube
Package / Case: Module
Mounting Type: Chassis Mount
Input: Standard
Configuration: Three Phase
Operating Temperature: -40°C ~ 150°C (TJ)
Vce(on) (Max) @ Vge, Ic: 2.25V @ 15V, 200A
NTC Thermistor: Yes
Supplier Device Package: PG-MDIP-28
IGBT Type: Trench Field Stop
Current - Collector (Ic) (Max): 200 A
Voltage - Collector Emitter Breakdown (Max): 700 V
Power - Max: 694 W
Current - Collector Cutoff (Max): 100 µA
Input Capacitance (Cies) @ Vce: 13500 pF @ 25 V
товару немає в наявності
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CY9AF112NPMC-GNE1
CY9AF112NPMC-GNE1
Виробник: Infineon Technologies
Description: IC MCU 32BIT 128KB FLASH 100LQFP
Packaging: Tray
Package / Case: 100-LQFP
Mounting Type: Surface Mount
Speed: 40MHz
Program Memory Size: 128KB (128K x 8)
RAM Size: 16K x 8
Operating Temperature: -40°C ~ 105°C (TA)
Oscillator Type: External, Internal
Program Memory Type: FLASH
Core Processor: ARM® Cortex®-M3
Data Converters: A/D 16x12b SAR
Core Size: 32-Bit Single-Core
Voltage - Supply (Vcc/Vdd): 2.7V ~ 5.5V
Connectivity: CSIO, EBI/EMI, I2C, LINbus, SPI, UART/USART
Peripherals: DMA, LVD, POR, PWM, WDT
Supplier Device Package: 100-LQFP (14x14)
Number of I/O: 83
DigiKey Programmable: Not Verified
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ETT540N22P60XPSA1 Infineon-DS_eTT540N22P60-DS-v03_01-EN.pdf?fileId=5546d46266f85d6301670d4da56a366a
Виробник: Infineon Technologies
Description: THYR / DIODE MODULE DK
Packaging: Tray
Package / Case: Module
Mounting Type: Chassis Mount
Operating Temperature: 135°C (TJ)
Structure: Series Connection - All SCRs
Current - Hold (Ih) (Max): 300 mA
Current - Gate Trigger (Igt) (Max): 250 mA
Current - Non Rep. Surge 50, 60Hz (Itsm): 16300A @ 50Hz
Number of SCRs, Diodes: 2 SCRs
Current - On State (It (AV)) (Max): 542 A
Voltage - Gate Trigger (Vgt) (Max): 2.2 V
Current - On State (It (RMS)) (Max): 700 A
Voltage - Off State: 2.2 kV
товару немає в наявності
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CY8CLED04-68LTXI CY8CLED04.pdf
CY8CLED04-68LTXI
Виробник: Infineon Technologies
Description: IC MCU 8BIT 16KB FLASH 68QFN
Packaging: Tray
Package / Case: 68-VFQFN Exposed Pad
Mounting Type: Surface Mount
Interface: I2C, SPI, UART/USART, USB
RAM Size: 1K x 8
Operating Temperature: -40°C ~ 85°C
Voltage - Supply: 3V ~ 5.25V
Controller Series: CY8CLED
Program Memory Type: FLASH (16kB)
Applications: HB LED Controller
Core Processor: M8C
Supplier Device Package: 68-QFN (8x8)
Number of I/O: 56
DigiKey Programmable: Not Verified
на замовлення 78 шт:
термін постачання 21-31 дні (днів)
Кількість Ціна
1+650.97 грн
10+486.55 грн
25+451.49 грн
В кошику  од. на суму  грн.
CY7C1383KV33-133AXI Infineon-CY7C1381KV33_CY_7C1381KVE33_CY7C1383KV33_CY_7C1383KVE33_18-Mbit_(512_K_36_1_M_18)_Flow-Through_SRAM_(With_ECC)-DataSheet-v07_00-EN.pdf?fileId=8ac78c8c7d0d8da4017d0ed61b255667&utm_source=cypress&utm_medium=referral&ut
CY7C1383KV33-133AXI
Виробник: Infineon Technologies
Description: IC SRAM 18MBIT PARALLEL 100TQFP
Packaging: Tray
Package / Case: 100-LQFP
Mounting Type: Surface Mount
Memory Size: 18Mbit
Memory Type: Volatile
Operating Temperature: -40°C ~ 85°C (TA)
Voltage - Supply: 3.135V ~ 3.6V
Technology: SRAM - Synchronous, SDR
Clock Frequency: 133 MHz
Memory Format: SRAM
Supplier Device Package: 100-TQFP (14x20)
Memory Interface: Parallel
Access Time: 6.5 ns
Memory Organization: 1M x 18
DigiKey Programmable: Not Verified
на замовлення 97 шт:
термін постачання 21-31 дні (днів)
Кількість Ціна
1+2420.06 грн
10+2155.16 грн
25+2086.00 грн
72+1883.73 грн
В кошику  од. на суму  грн.
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