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IHW20N135R3FKSA1 IHW20N135R3FKSA1 Infineon Technologies DS_IHW20N135R3.pdf?folderId=db3a3043156fd5730115f56849b61941&fileId=db3a30433162923a0131897157e40e46 Description: IGBT TRENCH 1350V 40A TO247-3
Packaging: Bulk
Package / Case: TO-247-3
Mounting Type: Through Hole
Operating Temperature: -40°C ~ 175°C (TJ)
Input Type: Standard
Vce(on) (Max) @ Vge, Ic: 1.8V @ 15V, 20A
Supplier Device Package: PG-TO247-3-1
IGBT Type: Trench
Td (on/off) @ 25°C: -/335ns
Switching Energy: 1.3mJ (off)
Test Condition: 600V, 20A, 15Ohm, 15V
Gate Charge: 195 nC
Current - Collector (Ic) (Max): 40 A
Voltage - Collector Emitter Breakdown (Max): 1350 V
Current - Collector Pulsed (Icm): 60 A
Power - Max: 310 W
на замовлення 13692 шт:
термін постачання 21-31 дні (днів)
140+155.04 грн
Мінімальне замовлення: 140
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REF5QR2280BG124W1TOBO1 REF5QR2280BG124W1TOBO1 Infineon Technologies #!?fileId=8ac78c8c919c9f9d019233514f1f43d4 Description: REF5QR2280BG124W1TOBO1
Packaging: Box
Voltage - Output: 5V, 12V
Voltage - Input: 85 ~ 300 VAC
Current - Output: 1.92A, 200mA
Contents: Board(s)
Regulator Topology: Flyback
Utilized IC / Part: ICE5QR2280BG-1
Main Purpose: AC/DC Converter
Outputs and Type: 2 Non-Isolated Outputs
Power - Output: 24W
на замовлення 5 шт:
термін постачання 21-31 дні (днів)
1+9459.41 грн
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BAV99UE6327HTSA1 BAV99UE6327HTSA1 Infineon Technologies bav99series.pdf Description: DIODE ARRAY GP 80V 200MA SC74-6
Packaging: Bulk
Package / Case: SC-74, SOT-457
Mounting Type: Surface Mount
Speed: Small Signal =< 200mA (Io), Any Speed
Reverse Recovery Time (trr): 4 ns
Technology: Standard
Diode Configuration: 2 Pair Series Connection
Current - Average Rectified (Io) (per Diode): 200mA (DC)
Supplier Device Package: PG-SC74-6
Operating Temperature - Junction: 150°C (Max)
Voltage - DC Reverse (Vr) (Max): 80 V
Voltage - Forward (Vf) (Max) @ If: 1.25 V @ 150 mA
Current - Reverse Leakage @ Vr: 150 nA @ 70 V
на замовлення 3360 шт:
термін постачання 21-31 дні (днів)
3360+6.26 грн
Мінімальне замовлення: 3360
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BAS16SH6727XTSA1 BAS16SH6727XTSA1 Infineon Technologies bas16series.pdf?folderId=db3a30431400ef6801141b5844e103ea&fileId=db3a30431400ef6801141b93811b03ff Description: DIODE ARR GP 80V 200MA SOT363-PO
Packaging: Tape & Reel (TR)
Package / Case: 6-VSSOP, SC-88, SOT-363
Mounting Type: Surface Mount
Speed: Small Signal =< 200mA (Io), Any Speed
Reverse Recovery Time (trr): 4 ns
Technology: Standard
Diode Configuration: 3 Independent
Current - Average Rectified (Io) (per Diode): 200mA (DC)
Supplier Device Package: PG-SOT363-PO
Operating Temperature - Junction: 150°C (Max)
Voltage - DC Reverse (Vr) (Max): 80 V
Voltage - Forward (Vf) (Max) @ If: 1.25 V @ 150 mA
Current - Reverse Leakage @ Vr: 1 µA @ 75 V
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BGA231N7E6327XTSA2 BGA231N7E6327XTSA2 Infineon Technologies BGA231N7.pdf Description: IC AMP GPS 1.55-1.615GHZ TSLP7-1
Packaging: Tape & Reel (TR)
Package / Case: 6-XFDFN Exposed Pad
Mounting Type: Surface Mount
Frequency: 1.55GHz ~ 1.615GHz
RF Type: GPS
Voltage - Supply: 1.5V ~ 3.6V
Gain: 16dB
Current - Supply: 4.4mA
Noise Figure: 0.75dB
P1dB: -5dBm
Test Frequency: 1.55GHz ~ 1.615GHz
Supplier Device Package: PG-TSLP-7-1
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BGA231N7E6327XTSA2 BGA231N7E6327XTSA2 Infineon Technologies BGA231N7.pdf Description: IC AMP GPS 1.55-1.615GHZ TSLP7-1
Packaging: Cut Tape (CT)
Package / Case: 6-XFDFN Exposed Pad
Mounting Type: Surface Mount
Frequency: 1.55GHz ~ 1.615GHz
RF Type: GPS
Voltage - Supply: 1.5V ~ 3.6V
Gain: 16dB
Current - Supply: 4.4mA
Noise Figure: 0.75dB
P1dB: -5dBm
Test Frequency: 1.55GHz ~ 1.615GHz
Supplier Device Package: PG-TSLP-7-1
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CY8C4148AXQ-S445 CY8C4148AXQ-S445 Infineon Technologies Infineon-PSOC_4_PSOC_4100S_PLUS_256KB_DATASHEET_PROGRAMMABLE_SYSTEM-ON-CHIP_(PSOC)-DataSheet-v05_00-EN.pdf?fileId=8ac78c8c7d0d8da4017d0ee8193c7109 Description: IC MCU 32BIT 256KB FLASH 100TQFP
Packaging: Tray
Package / Case: 100-LQFP
Mounting Type: Surface Mount
Speed: 48MHz
Program Memory Size: 256KB (256K x 8)
RAM Size: 32K x 8
Operating Temperature: -40°C ~ 105°C (TA)
Oscillator Type: External, Internal
Program Memory Type: FLASH
Core Processor: ARM® Cortex®-M0+
Data Converters: A/D 16x10b SAR, 16x12b Sigma-Delta; D/A 2x7/8b
Core Size: 32-Bit
Voltage - Supply (Vcc/Vdd): 1.71V ~ 5.5V
Connectivity: FIFO, I2C, IrDA, LINbus, Microwire, QSPI, SmartCard, SPI, SSP, UART/USART
Peripherals: Brown-out Detect/Reset, CapSense, DMA, LCD, LVD, POR, PWM, Temp Sensor, WDT
Supplier Device Package: 100-TQFP (14x14)
Number of I/O: 54
DigiKey Programmable: Not Verified
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S6E2CC9J0AGB1000A S6E2CC9J0AGB1000A Infineon Technologies download Description: IC MCU 32BIT 1.5MB FLASH 192FBGA
Packaging: Tray
Package / Case: 192-LFBGA
Mounting Type: Surface Mount
Speed: 200MHz
Program Memory Size: 1.5MB (1.5M x 8)
RAM Size: 192K x 8
Operating Temperature: -40°C ~ 125°C (TA)
Oscillator Type: Internal
Program Memory Type: FLASH
Core Processor: ARM® Cortex®-M4F
Data Converters: A/D 32x12b; D/A 2x12b
Core Size: 32-Bit Single-Core
Voltage - Supply (Vcc/Vdd): 2.7V ~ 5.5V
Connectivity: CANbus, CSIO, EBI/EMI, Ethernet, I2C, LINbus, SD, SPI, UART/USART, USB
Peripherals: DMA, I2S, LVD, POR, PWM, WDT
Supplier Device Package: 192-FBGA (12x12)
Number of I/O: 152
DigiKey Programmable: Not Verified
на замовлення 1176 шт:
термін постачання 21-31 дні (днів)
1+1001.47 грн
10+764.31 грн
25+714.29 грн
168+653.68 грн
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IRG4BC40UPBF IRG4BC40UPBF Infineon Technologies irg4bc40upbf.pdf?fileId=5546d462533600a4015356433c83229e description Description: IGBT 600V 40A TO-220AB
Packaging: Tube
Package / Case: TO-220-3
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Input Type: Standard
Vce(on) (Max) @ Vge, Ic: 2.1V @ 15V, 20A
Supplier Device Package: TO-220AB
Td (on/off) @ 25°C: 34ns/110ns
Switching Energy: 320µJ (on), 350µJ (off)
Test Condition: 480V, 20A, 10Ohm, 15V
Gate Charge: 100 nC
Current - Collector (Ic) (Max): 40 A
Voltage - Collector Emitter Breakdown (Max): 600 V
Current - Collector Pulsed (Icm): 160 A
Power - Max: 160 W
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FM1608B-SGTR FM1608B-SGTR Infineon Technologies FM1608B.pdf Description: IC FRAM 64KBIT PARALLEL 28SOIC
Packaging: Tape & Reel (TR)
Package / Case: 28-SOIC (0.295", 7.50mm Width)
Mounting Type: Surface Mount
Memory Size: 64Kbit
Memory Type: Non-Volatile
Operating Temperature: -40°C ~ 85°C (TA)
Voltage - Supply: 4.5V ~ 5.5V
Technology: FRAM (Ferroelectric RAM)
Memory Format: FRAM
Supplier Device Package: 28-SOIC
Write Cycle Time - Word, Page: 130ns
Memory Interface: Parallel
Memory Organization: 8K x 8
DigiKey Programmable: Not Verified
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KP465XTMA1 KP465XTMA1 Infineon Technologies Infineon-KP465-DataSheet-v01_00-EN.pdf?fileId=8ac78c8c92bcf0b001930222427f1609 Description: MEMS GROWTH
Packaging: Tape & Reel (TR)
Package / Case: 8-SMD, Flat Leads, Exposed Pad
Output Type: SPI
Mounting Type: Surface Mount
Output: 14 b
Operating Pressure: 8.7PSI ~ 46.41PSI (60kPa ~ 320kPa)
Pressure Type: Absolute
Accuracy: ±0.435PSI (±3kPa)
Operating Temperature: -40°C ~ 125°C
Voltage - Supply: 3V ~ 5.25V
Applications: Board Mount, Industrial Automation
Supplier Device Package: PG-DFN-8-1
Port Style: No Port
Maximum Pressure: 87.02PSI (600kPa)
Grade: Automotive
Qualification: AEC-Q103-002
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KP465XTMA1 KP465XTMA1 Infineon Technologies Infineon-KP465-DataSheet-v01_00-EN.pdf?fileId=8ac78c8c92bcf0b001930222427f1609 Description: MEMS GROWTH
Packaging: Cut Tape (CT)
Package / Case: 8-SMD, Flat Leads, Exposed Pad
Output Type: SPI
Mounting Type: Surface Mount
Output: 14 b
Operating Pressure: 8.7PSI ~ 46.41PSI (60kPa ~ 320kPa)
Pressure Type: Absolute
Accuracy: ±0.435PSI (±3kPa)
Operating Temperature: -40°C ~ 125°C
Voltage - Supply: 3V ~ 5.25V
Applications: Board Mount, Industrial Automation
Supplier Device Package: PG-DFN-8-1
Port Style: No Port
Maximum Pressure: 87.02PSI (600kPa)
Grade: Automotive
Qualification: AEC-Q103-002
на замовлення 1000 шт:
термін постачання 21-31 дні (днів)
2+251.80 грн
10+181.74 грн
25+166.53 грн
100+140.68 грн
250+133.24 грн
500+128.76 грн
1000+123.02 грн
Мінімальне замовлення: 2
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CY25568SXCT CY25568SXCT Infineon Technologies Infineon-CY25568_Spread_Spectrum_Clock_Generator_Datasheet-AdditionalTechnicalInformation-v09_00-EN.pdf?fileId=8ac78c8c7d0d8da4017d0ec603023c21 Description: IC CLK/FREQ SYNTH 16SOIC
Packaging: Bulk
Package / Case: 16-SOIC (0.154", 3.90mm Width)
Mounting Type: Surface Mount
Output: Clock
Frequency - Max: 128MHz
Type: Clock/Frequency Synthesizer, Fanout Distribution, Frequency Modulator, Spread Spectrum Clock Generator
Input: Clock, Crystal, Resonator
Operating Temperature: 0°C ~ 70°C
Voltage - Supply: 2.9V ~ 3.6V
Ratio - Input:Output: 1:4
Differential - Input:Output: No/No
Supplier Device Package: 16-SOIC
PLL: Yes
Divider/Multiplier: Yes/Yes
Number of Circuits: 1
DigiKey Programmable: Not Verified
на замовлення 12500 шт:
термін постачання 21-31 дні (днів)
42+571.62 грн
Мінімальне замовлення: 42
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CY62157EV30LL-45ZXAT CY62157EV30LL-45ZXAT Infineon Technologies Description: IC SRAM 8MBIT PARALLEL 48TSOP I
Packaging: Tape & Reel (TR)
Package / Case: 48-TFSOP (0.724", 18.40mm Width)
Mounting Type: Surface Mount
Memory Size: 8Mbit
Memory Type: Volatile
Operating Temperature: -40°C ~ 85°C (TA)
Voltage - Supply: 2.2V ~ 3.6V
Technology: SRAM - Asynchronous
Memory Format: SRAM
Supplier Device Package: 48-TSOP I
Write Cycle Time - Word, Page: 45ns
Memory Interface: Parallel
Access Time: 45 ns
Memory Organization: 512K x 16
DigiKey Programmable: Not Verified
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CY62157EV30LL-55ZSXET CY62157EV30LL-55ZSXET Infineon Technologies Infineon-CY62157EV30_MoBL_8-Mbit_(512_K_16)_Static_RAM-DataSheet-v20_00-EN.pdf?fileId=8ac78c8c7d0d8da4017d0ebe669131ef&utm_source=cypress&utm_medium=referral&utm_campaign=202110_globe_en_all_integration-files&redirId=File_4_0 Description: IC SRAM 8MBIT PARALLEL 44TSOP II
Packaging: Tape & Reel (TR)
Package / Case: 44-TSOP (0.400", 10.16mm Width)
Mounting Type: Surface Mount
Memory Size: 8Mbit
Memory Type: Volatile
Operating Temperature: -40°C ~ 125°C (TA)
Voltage - Supply: 2.2V ~ 3.6V
Technology: SRAM - Asynchronous
Memory Format: SRAM
Supplier Device Package: 44-TSOP II
Write Cycle Time - Word, Page: 55ns
Memory Interface: Parallel
Access Time: 55 ns
Memory Organization: 512K x 16
DigiKey Programmable: Not Verified
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BTT60801ERLXUMA1 BTT60801ERLXUMA1 Infineon Technologies Infineon-BTT6080-1ERL-DataSheet-v01_00-EN.pdf?fileId=8ac78c8c92bcf0b00192dd3a20094ad3 Description: PROFET
Features: Slew Rate Controlled
Packaging: Tape & Reel (TR)
Package / Case: 14-SOIC (0.154", 3.90mm Width) Exposed Pad
Output Type: N-Channel
Mounting Type: Surface Mount
Number of Outputs: 1
Switch Type: General Purpose
Operating Temperature: -40°C ~ 150°C (TJ)
Output Configuration: High Side
Input Type: Non-Inverting
Voltage - Load: 8V ~ 36V
Voltage - Supply (Vcc/Vdd): 8V ~ 36V
Current - Output (Max): 2.5A
Ratio - Input:Output: 1:1
Supplier Device Package: PG-TDSO-14-11
Fault Protection: Current Limiting (Adjustable), Over Temperature, Over Voltage, UVLO
Grade: Automotive
Qualification: AEC-Q100
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BTT60801ERLXUMA1 BTT60801ERLXUMA1 Infineon Technologies Infineon-BTT6080-1ERL-DataSheet-v01_00-EN.pdf?fileId=8ac78c8c92bcf0b00192dd3a20094ad3 Description: PROFET
Features: Slew Rate Controlled
Packaging: Cut Tape (CT)
Package / Case: 14-SOIC (0.154", 3.90mm Width) Exposed Pad
Output Type: N-Channel
Mounting Type: Surface Mount
Number of Outputs: 1
Switch Type: General Purpose
Operating Temperature: -40°C ~ 150°C (TJ)
Output Configuration: High Side
Input Type: Non-Inverting
Voltage - Load: 8V ~ 36V
Voltage - Supply (Vcc/Vdd): 8V ~ 36V
Current - Output (Max): 2.5A
Ratio - Input:Output: 1:1
Supplier Device Package: PG-TDSO-14-11
Fault Protection: Current Limiting (Adjustable), Over Temperature, Over Voltage, UVLO
Grade: Automotive
Qualification: AEC-Q100
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BTT60351ERLXUMA1 BTT60351ERLXUMA1 Infineon Technologies Infineon-BTT6035-1ERL-DataSheet-v01_00-EN.pdf?fileId=8ac78c8c92bcf0b00192dd27d35f4ad0 Description: PROFET
Features: Slew Rate Controlled
Packaging: Tape & Reel (TR)
Package / Case: 14-SOIC (0.154", 3.90mm Width) Exposed Pad
Output Type: N-Channel
Mounting Type: Surface Mount
Number of Outputs: 1
Switch Type: Relay, Solenoid Driver
Operating Temperature: -40°C ~ 150°C (TJ)
Output Configuration: High Side
Rds On (Typ): 35mOhm
Input Type: Non-Inverting
Voltage - Load: 5V ~ 48V
Voltage - Supply (Vcc/Vdd): 5V ~ 48V
Current - Output (Max): 5A
Ratio - Input:Output: 1:1
Supplier Device Package: PG-TDSO-14-11
Fault Protection: Current Limiting (Adjustable), Over Temperature, Over Voltage, Reverse Battery, Short Circuit, UVLO
Grade: Automotive
Qualification: AEC-Q100
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BTT60351ERLXUMA1 BTT60351ERLXUMA1 Infineon Technologies Infineon-BTT6035-1ERL-DataSheet-v01_00-EN.pdf?fileId=8ac78c8c92bcf0b00192dd27d35f4ad0 Description: PROFET
Features: Slew Rate Controlled
Packaging: Cut Tape (CT)
Package / Case: 14-SOIC (0.154", 3.90mm Width) Exposed Pad
Output Type: N-Channel
Mounting Type: Surface Mount
Number of Outputs: 1
Switch Type: Relay, Solenoid Driver
Operating Temperature: -40°C ~ 150°C (TJ)
Output Configuration: High Side
Rds On (Typ): 35mOhm
Input Type: Non-Inverting
Voltage - Load: 5V ~ 48V
Voltage - Supply (Vcc/Vdd): 5V ~ 48V
Current - Output (Max): 5A
Ratio - Input:Output: 1:1
Supplier Device Package: PG-TDSO-14-11
Fault Protection: Current Limiting (Adjustable), Over Temperature, Over Voltage, Reverse Battery, Short Circuit, UVLO
Grade: Automotive
Qualification: AEC-Q100
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BTT60502EKAXUMA1 BTT60502EKAXUMA1 Infineon Technologies BTT6020_30_50-1EKA_PB.PDF?fileId=db3a3043405f2978014062e697d128ec Description: IC PWR SWITCH N-CHAN 1:1 DSO-14
Packaging: Bulk
Package / Case: 14-SOIC (0.154", 3.90mm Width) Exposed Pad
Output Type: N-Channel
Mounting Type: Surface Mount
Number of Outputs: 2
Interface: On/Off
Switch Type: General Purpose
Operating Temperature: -40°C ~ 150°C (TJ)
Output Configuration: High Side
Rds On (Typ): 50mOhm
Voltage - Load: 5V ~ 36V
Voltage - Supply (Vcc/Vdd): Not Required
Current - Output (Max): 3A
Ratio - Input:Output: 1:1
Supplier Device Package: PG-DSO-14-40-EP
Fault Protection: Current Limiting (Fixed), Open Load Detect, Over Temperature, Over Voltage
на замовлення 1 шт:
термін постачання 21-31 дні (днів)
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AIMCQ120R060M1TXTMA1 AIMCQ120R060M1TXTMA1 Infineon Technologies Infineon-AIMCQ120R060M1T-DataSheet-v01_00-EN.pdf?fileId=8ac78c8c90530b3a01910fe6494e6b21 Description: SIC_DISCRETE
Packaging: Tape & Reel (TR)
Package / Case: 22-PowerBSOP Module
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: SiCFET (Silicon Carbide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 44A (Tc)
Rds On (Max) @ Id, Vgs: 75mOhm @ 13A, 20V
Power Dissipation (Max): 259W (Tc)
Vgs(th) (Max) @ Id: 5.1V @ 4.3mA
Supplier Device Package: PG-HDSOP-22
Grade: Automotive
Drive Voltage (Max Rds On, Min Rds On): 18V, 20V
Vgs (Max): +25V, -10V
Drain to Source Voltage (Vdss): 1200 V
Gate Charge (Qg) (Max) @ Vgs: 32 nC @ 20 V
Input Capacitance (Ciss) (Max) @ Vds: 880 pF @ 800 V
Qualification: AEC-Q101
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AIMCQ120R060M1TXTMA1 AIMCQ120R060M1TXTMA1 Infineon Technologies Infineon-AIMCQ120R060M1T-DataSheet-v01_00-EN.pdf?fileId=8ac78c8c90530b3a01910fe6494e6b21 Description: SIC_DISCRETE
Packaging: Cut Tape (CT)
Package / Case: 22-PowerBSOP Module
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: SiCFET (Silicon Carbide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 44A (Tc)
Rds On (Max) @ Id, Vgs: 75mOhm @ 13A, 20V
Power Dissipation (Max): 259W (Tc)
Vgs(th) (Max) @ Id: 5.1V @ 4.3mA
Supplier Device Package: PG-HDSOP-22
Grade: Automotive
Drive Voltage (Max Rds On, Min Rds On): 18V, 20V
Vgs (Max): +25V, -10V
Drain to Source Voltage (Vdss): 1200 V
Gate Charge (Qg) (Max) @ Vgs: 32 nC @ 20 V
Input Capacitance (Ciss) (Max) @ Vds: 880 pF @ 800 V
Qualification: AEC-Q101
на замовлення 239 шт:
термін постачання 21-31 дні (днів)
1+778.37 грн
10+542.53 грн
100+465.08 грн
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IAUMN04S7N005GAUMA1 IAUMN04S7N005GAUMA1 Infineon Technologies Description: MOSFET_(20V 40V)
Packaging: Tray
Package / Case: 4-PowerSFN
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 250A (Tj)
Rds On (Max) @ Id, Vgs: 0.5mOhm @ 125A, 10V
Power Dissipation (Max): 240W (Tc)
Vgs(th) (Max) @ Id: 3V @ 140µA
Supplier Device Package: PG-HSOG-4-1
Grade: Automotive
Drive Voltage (Max Rds On, Min Rds On): 7V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 40 V
Gate Charge (Qg) (Max) @ Vgs: 185 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 12674 pF @ 20 V
Qualification: AEC-Q101
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CY8C4547AZQ-S453 CY8C4547AZQ-S453 Infineon Technologies Infineon-PSoC_4_PSoC_4500S_Datasheet_Programmable_System-on-Chip_(PSoC)-AdditionalTechnicalInformation-v05_00-EN.pdf?fileId=8ac78c8c7d0d8da4017d0ee812fa7101 Description: IC MCU 32BIT 128KB FLASH 48TQFP
Packaging: Tray
Package / Case: 48-LQFP
Mounting Type: Surface Mount
Speed: 48MHz
Program Memory Size: 128KB (128K x 8)
RAM Size: 32K x 8
Operating Temperature: -40°C ~ 105°C (TA)
Oscillator Type: External, Internal
Program Memory Type: FLASH
Core Processor: ARM® Cortex®-M0+
Data Converters: A/D 16x10b, 20x12b SAR; D/A 2x7/8b
Core Size: 32-Bit
Voltage - Supply (Vcc/Vdd): 1.71V ~ 5.5V
Connectivity: I2C, IrDA, LINbus, Microwire, SmartCard, SPI, SSP, UART/USART
Peripherals: Brown-out Detect/Reset, CapSense, LCD, POR, PWM, WDT
Supplier Device Package: 48-TQFP (7x7)
Number of I/O: 38
DigiKey Programmable: Not Verified
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CY8C4548AZI-S483 CY8C4548AZI-S483 Infineon Technologies Infineon-PSoC_4_PSoC_4500S_Datasheet_Programmable_System-on-Chip_(PSoC)-AdditionalTechnicalInformation-v05_00-EN.pdf?fileId=8ac78c8c7d0d8da4017d0ee812fa7101 Description: IC MCU 32BIT 256KB FLASH 48TQFP
Packaging: Tray
Package / Case: 48-LQFP
Mounting Type: Surface Mount
Speed: 48MHz
Program Memory Size: 256KB (256K x 8)
RAM Size: 32K x 8
Operating Temperature: -40°C ~ 85°C (TA)
Oscillator Type: External
Program Memory Type: FLASH
Core Processor: ARM® Cortex®-M0+
Data Converters: A/D 16x10b Slope, 16x12b SAR; D/A 2xIDAC
Core Size: 32-Bit Single-Core
Voltage - Supply (Vcc/Vdd): 1.71V ~ 5.5V
Connectivity: I2C, IrDA, LINbus, Microwire, SmartCard, SPI, SSP, UART/USART
Peripherals: Brown-out Detect/Reset, CapSense, LCD, POR, PWM, WDT
Supplier Device Package: 48-TQFP (7x7)
Number of I/O: 38
DigiKey Programmable: Not Verified
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CY8C4548AZI-S485 CY8C4548AZI-S485 Infineon Technologies Infineon-PSoC_4_PSoC_4500S_Datasheet_Programmable_System-on-Chip_(PSoC)-AdditionalTechnicalInformation-v05_00-EN.pdf?fileId=8ac78c8c7d0d8da4017d0ee812fa7101 Description: IC MCU 32BIT 256KB FLASH 64TQFP
Packaging: Tray
Package / Case: 64-LQFP
Mounting Type: Surface Mount
Speed: 48MHz
Program Memory Size: 256KB (256K x 8)
RAM Size: 32K x 8
Operating Temperature: -40°C ~ 85°C (TA)
Oscillator Type: External
Program Memory Type: FLASH
Core Processor: ARM® Cortex®-M0+
Data Converters: A/D 16x10b Slope, 16x12b SAR; D/A 2xIDAC
Core Size: 32-Bit Single-Core
Voltage - Supply (Vcc/Vdd): 1.71V ~ 5.5V
Connectivity: I2C, IrDA, LINbus, Microwire, SmartCard, SPI, SSP, UART/USART
Peripherals: Brown-out Detect/Reset, CapSense, LCD, POR, PWM, WDT
Supplier Device Package: 64-TQFP (10x10)
Number of I/O: 53
DigiKey Programmable: Not Verified
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CY8C4547AZI-S463 CY8C4547AZI-S463 Infineon Technologies Infineon-PSoC_4_PSoC_4500S_Datasheet_Programmable_System-on-Chip_(PSoC)-AdditionalTechnicalInformation-v05_00-EN.pdf?fileId=8ac78c8c7d0d8da4017d0ee812fa7101 Description: IC MCU 32BIT 128KB FLASH 48TQFP
Packaging: Tray
Package / Case: 48-LQFP
Mounting Type: Surface Mount
Speed: 48MHz
Program Memory Size: 128KB (128K x 8)
RAM Size: 32K x 8
Operating Temperature: -40°C ~ 85°C (TA)
Oscillator Type: External
Program Memory Type: FLASH
Core Processor: ARM® Cortex®-M0+
Data Converters: A/D 16x10b Slope, 16x12b SAR; D/A 2xIDAC
Core Size: 32-Bit Single-Core
Voltage - Supply (Vcc/Vdd): 1.71V ~ 5.5V
Connectivity: I2C, IrDA, LINbus, Microwire, SmartCard, SPI, SSP, UART/USART
Peripherals: Brown-out Detect/Reset, CapSense, LCD, POR, PWM, WDT
Supplier Device Package: 48-TQFP (7x7)
Number of I/O: 38
DigiKey Programmable: Not Verified
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CY8C26233-24PXI CY8C26233-24PXI Infineon Technologies CY8C25122%2C26233%2C26443%2C26643.pdf Description: IC MCU 8BIT 8KB FLASH 20DIP
Packaging: Tube
Package / Case: 20-DIP (0.300", 7.62mm)
Mounting Type: Through Hole
Speed: 24MHz
Program Memory Size: 8KB (8K x 8)
RAM Size: 256 x 8
Operating Temperature: -40°C ~ 85°C (TA)
Oscillator Type: Internal
Program Memory Type: FLASH
Core Processor: M8C
Data Converters: A/D 1x8b, 1x11b, 1x12b; D/A 1x9b
Core Size: 8-Bit
Voltage - Supply (Vcc/Vdd): 3V ~ 5.25V
Connectivity: SPI, UART/USART
Peripherals: LVD, POR, PWM, WDT
Supplier Device Package: 20-DIP
Number of I/O: 16
DigiKey Programmable: Not Verified
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TDA386410000AUMA1 TDA386410000AUMA1 Infineon Technologies Infineon-TDA38641-0000-DataSheet-v01_00-EN.pdf?fileId=8ac78c8c93dda25b01946ea0ecd10409 Description: IFX POL
Packaging: Cut Tape (CT)
Package / Case: 36-PowerVFQFN
Output Type: Programmable
Mounting Type: Surface Mount
Number of Outputs: 1
Function: Step-Down
Current - Output: 40A
Operating Temperature: -40°C ~ 125°C (TJ)
Output Configuration: Positive
Frequency - Switching: 600kHz ~ 1.2MHz
Voltage - Input (Max): 5.5V, 17V
Topology: Buck
Supplier Device Package: PG-IQFN-36-3
Synchronous Rectifier: Yes
Voltage - Output (Max): 3.04V
Voltage - Input (Min): 3V, 4.5V
Voltage - Output (Min/Fixed): 0.25V
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TDA386410000AUMA1 TDA386410000AUMA1 Infineon Technologies Infineon-TDA38641-0000-DataSheet-v01_00-EN.pdf?fileId=8ac78c8c93dda25b01946ea0ecd10409 Description: IFX POL
Packaging: Tray
Package / Case: 36-PowerVFQFN
Output Type: Programmable
Mounting Type: Surface Mount
Number of Outputs: 1
Function: Step-Down
Current - Output: 40A
Operating Temperature: -40°C ~ 125°C (TJ)
Output Configuration: Positive
Frequency - Switching: 600kHz ~ 1.2MHz
Voltage - Input (Max): 5.5V, 17V
Topology: Buck
Supplier Device Package: PG-IQFN-36-3
Synchronous Rectifier: Yes
Voltage - Output (Max): 3.04V
Voltage - Input (Min): 3V, 4.5V
Voltage - Output (Min/Fixed): 0.25V
на замовлення 5000 шт:
термін постачання 21-31 дні (днів)
5000+176.19 грн
Мінімальне замовлення: 5000
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TDA38641A0000AUMA1 Infineon Technologies Description: IFX POL
Packaging: Tape & Reel (TR)
Package / Case: 36-PowerVFQFN
Output Type: Programmable
Mounting Type: Surface Mount
Number of Outputs: 1
Function: Step-Down
Current - Output: 40A
Operating Temperature: -40°C ~ 125°C (TJ)
Output Configuration: Positive
Frequency - Switching: 600kHz ~ 1.2MHz
Voltage - Input (Max): 17V
Topology: Buck
Supplier Device Package: PG-IQFN-36-3
Synchronous Rectifier: Yes
Voltage - Output (Max): 3.04V
Voltage - Input (Min): 5V
Voltage - Output (Min/Fixed): 0.25V
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CY7C1168KV18-400BZXC CY7C1168KV18-400BZXC Infineon Technologies Infineon-CY7C1168KV18_CY7C1170KV18_18-Mbit_DDR_II+_SRAM_Two-Word_Burst_Architecture_(2.5_Cycle_Read_Latency)-DataSheet-v10_00-EN.pdf?fileId=8ac78c8c7d0d8da4017d0ebdb60c308a&utm_source=cypress&utm_medium=referral&utm_campaign= Description: IC SRAM 18MBIT PARALLEL 165FBGA
Packaging: Tray
Package / Case: 165-LBGA
Mounting Type: Surface Mount
Memory Size: 18Mbit
Memory Type: Volatile
Operating Temperature: 0°C ~ 70°C (TA)
Voltage - Supply: 1.7V ~ 1.9V
Technology: SRAM - Synchronous, DDR II+
Clock Frequency: 400 MHz
Memory Format: SRAM
Supplier Device Package: 165-FBGA (13x15)
Memory Interface: Parallel
Memory Organization: 1M x 18
DigiKey Programmable: Not Verified
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ISP670P06NMAXTSA1 ISP670P06NMAXTSA1 Infineon Technologies Infineon-ISP670P06NMA-DataSheet-v02_00-EN.pdf?fileId=8ac78c8c919c9f9d01921ed361683c30 Description: ISP670P06NMAXTSA1
Packaging: Tape & Reel (TR)
Package / Case: TO-261-4, TO-261AA
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: P-Channel
Current - Continuous Drain (Id) @ 25°C: 3.7A (Ta), 6.4A (Tc)
Rds On (Max) @ Id, Vgs: 67mOhm @ 3.7A, 10V
Power Dissipation (Max): 1.8W (Ta), 5W (Tc)
Vgs(th) (Max) @ Id: 4V @ 1.037mA
Supplier Device Package: PG-SOT223-4-21
Grade: Automotive
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 60 V
Gate Charge (Qg) (Max) @ Vgs: 48 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 1800 pF @ 30 V
Qualification: AEC-Q101
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ISP670P06NMAXTSA1 ISP670P06NMAXTSA1 Infineon Technologies Infineon-ISP670P06NMA-DataSheet-v02_00-EN.pdf?fileId=8ac78c8c919c9f9d01921ed361683c30 Description: ISP670P06NMAXTSA1
Packaging: Cut Tape (CT)
Package / Case: TO-261-4, TO-261AA
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: P-Channel
Current - Continuous Drain (Id) @ 25°C: 3.7A (Ta), 6.4A (Tc)
Rds On (Max) @ Id, Vgs: 67mOhm @ 3.7A, 10V
Power Dissipation (Max): 1.8W (Ta), 5W (Tc)
Vgs(th) (Max) @ Id: 4V @ 1.037mA
Supplier Device Package: PG-SOT223-4-21
Grade: Automotive
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 60 V
Gate Charge (Qg) (Max) @ Vgs: 48 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 1800 pF @ 30 V
Qualification: AEC-Q101
на замовлення 735 шт:
термін постачання 21-31 дні (днів)
3+146.82 грн
10+90.51 грн
100+61.29 грн
500+45.77 грн
Мінімальне замовлення: 3
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AUIRF9540N AUIRF9540N Infineon Technologies AUIRF9540N.pdf Description: MOSFET P-CH 100V 23A TO220
Packaging: Tube
Package / Case: TO-220-3
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: P-Channel
Current - Continuous Drain (Id) @ 25°C: 23A (Tc)
Rds On (Max) @ Id, Vgs: 117mOhm @ 11A, 10V
Power Dissipation (Max): 140W (Tc)
Vgs(th) (Max) @ Id: 4V @ 250µA
Supplier Device Package: TO-220AB
Grade: Automotive
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 100 V
Gate Charge (Qg) (Max) @ Vgs: 97 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 1300 pF @ 25 V
Qualification: AEC-Q101
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S29GL256P11TFIV23 S29GL256P11TFIV23 Infineon Technologies 128_Mbit_3_V_Page_Flash_with_90_nm_MirrorBit_Process_Technology-DataSheet-v03_00-EN.pdf?fileId=8ac78c8c7d0d8da4017d0ed7850458a5&utm_source=cypress&utm_medium=ref Description: IC FLASH 256MBIT PARALLEL 56TSOP
Packaging: Tape & Reel (TR)
Package / Case: 56-TFSOP (0.724", 18.40mm Width)
Mounting Type: Surface Mount
Memory Size: 256Mbit
Memory Type: Non-Volatile
Operating Temperature: -40°C ~ 85°C (TA)
Voltage - Supply: 1.65V ~ 3.6V
Technology: FLASH - NOR
Memory Format: FLASH
Supplier Device Package: 56-TSOP
Write Cycle Time - Word, Page: 110ns
Memory Interface: Parallel
Access Time: 110 ns
Memory Organization: 32M x 8
DigiKey Programmable: Not Verified
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BC846UE6727HTSA1 BC846UE6727HTSA1 Infineon Technologies bc846s_bc846u_bc847s.pdf?folderId=db3a304314dca389011541d30fa21656&fileId=db3a304314dca3890115423ee6b71751 Description: TRANS 2NPN 65V 100MA PG-SC74-6
Packaging: Tape & Reel (TR)
Package / Case: SC-74, SOT-457
Mounting Type: Surface Mount
Transistor Type: 2 NPN (Dual)
Operating Temperature: 150°C (TJ)
Power - Max: 250mW
Current - Collector (Ic) (Max): 100mA
Voltage - Collector Emitter Breakdown (Max): 65V
Vce Saturation (Max) @ Ib, Ic: 600mV @ 5mA, 100mA
Current - Collector Cutoff (Max): 15nA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce: 200 @ 2mA, 5V
Frequency - Transition: 250MHz
Supplier Device Package: PG-SC74-6
Grade: Automotive
Qualification: AEC-Q101
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65DN06B02ELEMXPSA1 65DN06B02ELEMXPSA1 Infineon Technologies Infineon-65DN06B02-DataSheet-v03_01-EN.pdf?fileId=5546d4627506bb320175079ef4d40391 Description: DIODE STD 600V 15130A BGDELEM1
Packaging: Bulk
Package / Case: DO-200AC, K-PUK
Mounting Type: Clamp On
Speed: Standard Recovery >500ns, > 200mA (Io)
Technology: Standard
Current - Average Rectified (Io): 15130A
Supplier Device Package: BG-D-ELEM-1
Operating Temperature - Junction: 180°C (Max)
Voltage - DC Reverse (Vr) (Max): 600 V
Voltage - Forward (Vf) (Max) @ If: 890 mV @ 8000 A
Current - Reverse Leakage @ Vr: 100 mA @ 600 V
на замовлення 20 шт:
термін постачання 21-31 дні (днів)
1+39813.50 грн
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CY8C4146AZS-S275 CY8C4146AZS-S275 Infineon Technologies Infineon-Automotive_PSoC_4100S_Plus-DataSheet-v01_00-EN.pdf?fileId=8ac78c8c8823155701884daaa2621e33 Description: IC MCU 32BIT 64KB FLASH 64LQFP
Packaging: Tray
Package / Case: 64-LQFP
Mounting Type: Surface Mount
Speed: 48MHz
Program Memory Size: 64KB (64K x 8)
RAM Size: 8K x 8
Operating Temperature: -40°C ~ 105°C (TA)
Oscillator Type: External, Internal
Program Memory Type: FLASH
Core Processor: ARM® Cortex®-M0+
Data Converters: A/D 16x10/16x12b SAR; D/A 2x7b
Core Size: 32-Bit
Voltage - Supply (Vcc/Vdd): 1.71V ~ 5.5V
Connectivity: I2C, IrDA, LINbus, Microwire, SmartCard, SPI, SSP, UART/USART
Peripherals: Brown-out Detect/Reset, CapSense, LCD, LVD, POR, PWM, WDT
Supplier Device Package: 64-TQFP (10x10)
Grade: Automotive
Number of I/O: 54
Qualification: AEC-Q100
на замовлення 1600 шт:
термін постачання 21-31 дні (днів)
1+613.51 грн
10+457.47 грн
25+424.04 грн
160+354.50 грн
320+343.27 грн
480+337.65 грн
960+324.00 грн
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IRFB7434GPBF IRFB7434GPBF Infineon Technologies IR_PartNumberingSystem.pdf Description: MOSFET N CH 40V 195A TO220AB
Packaging: Bulk
Package / Case: TO-220-3
Mounting Type: Through Hole
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 195A (Tc)
Rds On (Max) @ Id, Vgs: 1.6mOhm @ 100A, 10V
Vgs(th) (Max) @ Id: 3.9V @ 250µA
Supplier Device Package: TO-220-3
Drive Voltage (Max Rds On, Min Rds On): 6V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 40 V
Gate Charge (Qg) (Max) @ Vgs: 324 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 10820 pF @ 25 V
на замовлення 2 шт:
термін постачання 21-31 дні (днів)
2+10485.89 грн
Мінімальне замовлення: 2
В кошику  од. на суму  грн.
MB91F577BPMC-GSK5E2 MB91F577BPMC-GSK5E2 Infineon Technologies Description: IC MCU 32B 1.0625MB FLSH 144LQFP
Packaging: Tray
Package / Case: 144-LQFP
Mounting Type: Surface Mount
Speed: 80MHz
Program Memory Size: 1.0625MB (1.0625M x 8)
RAM Size: 72K x 8
Operating Temperature: -40°C ~ 105°C (TA)
Oscillator Type: External
Program Memory Type: FLASH
EEPROM Size: 64K x 8
Core Processor: FR81S
Data Converters: A/D 40x8/10b; D/A 2x8b
Core Size: 32-Bit Single-Core
Voltage - Supply (Vcc/Vdd): 3V ~ 5.5V
Connectivity: CANbus, CSIO, EBI/EMI, I2C, LINbus, SPI, UART/USART
Peripherals: DMA, LCD, LVD, POR, PWM, WDT
Supplier Device Package: 144-LQFP (20x20)
Number of I/O: 111
DigiKey Programmable: Not Verified
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MB91F577BHSPMC-GSK5E1 MB91F577BHSPMC-GSK5E1 Infineon Technologies download Description: IC MCU 32B 1.0625MB FLSH 144LQFP
Packaging: Tray
Package / Case: 144-LQFP
Mounting Type: Surface Mount
Speed: 80MHz
Program Memory Size: 1.0625MB (1.0625M x 8)
RAM Size: 72K x 8
Operating Temperature: -40°C ~ 105°C (TA)
Oscillator Type: External
Program Memory Type: FLASH
EEPROM Size: 64K x 8
Core Processor: FR81S
Data Converters: A/D 40x8/10b; D/A 2x8b
Core Size: 32-Bit Single-Core
Voltage - Supply (Vcc/Vdd): 3V ~ 5.5V
Connectivity: CANbus, CSIO, EBI/EMI, I2C, LINbus, SPI, UART/USART
Peripherals: DMA, LCD, LVD, POR, PWM, WDT
Supplier Device Package: 144-LQFP (20x20)
Number of I/O: 111
DigiKey Programmable: Not Verified
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IMBG65R060M2H IMBG65R060M2H Infineon Technologies Infineon-IMBG65R060M2H-DataSheet-v02_01-EN.pdf?fileId=8ac78c8c92bcf0b0019387a31dca4258 Description: IMBG65R060M2H
Packaging: Tape & Reel (TR)
Package / Case: TO-263-8, D2PAK (7 Leads + Tab), TO-263CA
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: SiC (Silicon Carbide Junction Transistor)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 34.9A (Tc)
Rds On (Max) @ Id, Vgs: 55mOhm @ 15.4A, 20V
Power Dissipation (Max): 148W (Tc)
Vgs(th) (Max) @ Id: 5.6V @ 3.1mA
Supplier Device Package: PG-TO263-7-12
Drive Voltage (Max Rds On, Min Rds On): 15V, 20V
Vgs (Max): +23V, -7V
Drain to Source Voltage (Vdss): 650 V
Gate Charge (Qg) (Max) @ Vgs: 18 nC @ 18 V
Input Capacitance (Ciss) (Max) @ Vds: 669 pF @ 400 V
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IMBG65R060M2H IMBG65R060M2H Infineon Technologies Infineon-IMBG65R060M2H-DataSheet-v02_01-EN.pdf?fileId=8ac78c8c92bcf0b0019387a31dca4258 Description: IMBG65R060M2H
Packaging: Cut Tape (CT)
Package / Case: TO-263-8, D2PAK (7 Leads + Tab), TO-263CA
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: SiC (Silicon Carbide Junction Transistor)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 34.9A (Tc)
Rds On (Max) @ Id, Vgs: 55mOhm @ 15.4A, 20V
Power Dissipation (Max): 148W (Tc)
Vgs(th) (Max) @ Id: 5.6V @ 3.1mA
Supplier Device Package: PG-TO263-7-12
Drive Voltage (Max Rds On, Min Rds On): 15V, 20V
Vgs (Max): +23V, -7V
Drain to Source Voltage (Vdss): 650 V
Gate Charge (Qg) (Max) @ Vgs: 18 nC @ 18 V
Input Capacitance (Ciss) (Max) @ Vds: 669 pF @ 400 V
на замовлення 440 шт:
термін постачання 21-31 дні (днів)
1+520.83 грн
10+385.91 грн
25+357.00 грн
100+305.21 грн
250+291.01 грн
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IMBG65R033M2H IMBG65R033M2H Infineon Technologies Infineon-IMBG65R033M2H-DataSheet-v02_00-EN.pdf?fileId=8ac78c8c92bcf0b001938810c42c42ce Description: IMBG65R033M2H
Packaging: Tape & Reel (TR)
Package / Case: TO-263-8, D2PAK (7 Leads + Tab), TO-263CA
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: SiC (Silicon Carbide Junction Transistor)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 58A (Tc)
Rds On (Max) @ Id, Vgs: 30mOhm @ 27.9A, 20V
Power Dissipation (Max): 227W (Tc)
Vgs(th) (Max) @ Id: 5.6V @ 5.7mA
Supplier Device Package: PG-TO263-7-12
Drive Voltage (Max Rds On, Min Rds On): 15V, 20V
Vgs (Max): +23V, -7V
Drain to Source Voltage (Vdss): 650 V
Gate Charge (Qg) (Max) @ Vgs: 34 nC @ 18 V
Input Capacitance (Ciss) (Max) @ Vds: 1214 pF @ 400 V
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IMBG65R033M2H IMBG65R033M2H Infineon Technologies Infineon-IMBG65R033M2H-DataSheet-v02_00-EN.pdf?fileId=8ac78c8c92bcf0b001938810c42c42ce Description: IMBG65R033M2H
Packaging: Cut Tape (CT)
Package / Case: TO-263-8, D2PAK (7 Leads + Tab), TO-263CA
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: SiC (Silicon Carbide Junction Transistor)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 58A (Tc)
Rds On (Max) @ Id, Vgs: 30mOhm @ 27.9A, 20V
Power Dissipation (Max): 227W (Tc)
Vgs(th) (Max) @ Id: 5.6V @ 5.7mA
Supplier Device Package: PG-TO263-7-12
Drive Voltage (Max Rds On, Min Rds On): 15V, 20V
Vgs (Max): +23V, -7V
Drain to Source Voltage (Vdss): 650 V
Gate Charge (Qg) (Max) @ Vgs: 34 nC @ 18 V
Input Capacitance (Ciss) (Max) @ Vds: 1214 pF @ 400 V
на замовлення 423 шт:
термін постачання 21-31 дні (днів)
1+766.89 грн
10+575.86 грн
25+535.19 грн
100+460.31 грн
250+440.30 грн
В кошику  од. на суму  грн.
IMBG65R026M2H IMBG65R026M2H Infineon Technologies Infineon-IMBG65R026M2H-DataSheet-v02_00-EN.pdf?fileId=8ac78c8c92bcf0b0019387f54b2542b0 Description: IMBG65R026M2H
Packaging: Tape & Reel (TR)
Package / Case: TO-263-8, D2PAK (7 Leads + Tab), TO-263CA
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: SiC (Silicon Carbide Junction Transistor)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 68A (Tc)
Rds On (Max) @ Id, Vgs: 24mOhm @ 34.5A, 20V
Power Dissipation (Max): 263W (Tc)
Vgs(th) (Max) @ Id: 5.6V @ 7mA
Supplier Device Package: PG-TO263-7-12
Drive Voltage (Max Rds On, Min Rds On): 15V, 20V
Vgs (Max): +23V, -7V
Drain to Source Voltage (Vdss): 650 V
Gate Charge (Qg) (Max) @ Vgs: 42 nC @ 18 V
Input Capacitance (Ciss) (Max) @ Vds: 1499 pF @ 400 V
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IMBG65R026M2H IMBG65R026M2H Infineon Technologies Infineon-IMBG65R026M2H-DataSheet-v02_00-EN.pdf?fileId=8ac78c8c92bcf0b0019387f54b2542b0 Description: IMBG65R026M2H
Packaging: Cut Tape (CT)
Package / Case: TO-263-8, D2PAK (7 Leads + Tab), TO-263CA
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: SiC (Silicon Carbide Junction Transistor)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 68A (Tc)
Rds On (Max) @ Id, Vgs: 24mOhm @ 34.5A, 20V
Power Dissipation (Max): 263W (Tc)
Vgs(th) (Max) @ Id: 5.6V @ 7mA
Supplier Device Package: PG-TO263-7-12
Drive Voltage (Max Rds On, Min Rds On): 15V, 20V
Vgs (Max): +23V, -7V
Drain to Source Voltage (Vdss): 650 V
Gate Charge (Qg) (Max) @ Vgs: 42 nC @ 18 V
Input Capacitance (Ciss) (Max) @ Vds: 1499 pF @ 400 V
на замовлення 490 шт:
термін постачання 21-31 дні (днів)
1+924.37 грн
10+698.13 грн
25+650.25 грн
100+560.80 грн
250+537.24 грн
В кошику  од. на суму  грн.
IMBG65R010M2H IMBG65R010M2H Infineon Technologies Infineon-IMBG65R010M2H-DataSheet-v02_00-EN.pdf?fileId=8ac78c8c92bcf0b0019387a32c38425b Description: IMBG65R010M2H
Packaging: Tape & Reel (TR)
Package / Case: TO-263-8, D2PAK (7 Leads + Tab), TO-263CA
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: SiC (Silicon Carbide Junction Transistor)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 158A (Tc)
Rds On (Max) @ Id, Vgs: 9.1mOhm @ 92.1A, 20V
Power Dissipation (Max): 535W (Tc)
Vgs(th) (Max) @ Id: 5.6V @ 18.7mA
Supplier Device Package: PG-TO263-7-12
Drive Voltage (Max Rds On, Min Rds On): 15V, 20V
Vgs (Max): +23V, -7V
Drain to Source Voltage (Vdss): 650 V
Gate Charge (Qg) (Max) @ Vgs: 112 nC @ 18 V
Input Capacitance (Ciss) (Max) @ Vds: 4001 pF @ 400 V
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IMBG65R010M2H IMBG65R010M2H Infineon Technologies Infineon-IMBG65R010M2H-DataSheet-v02_00-EN.pdf?fileId=8ac78c8c92bcf0b0019387a32c38425b Description: IMBG65R010M2H
Packaging: Cut Tape (CT)
Package / Case: TO-263-8, D2PAK (7 Leads + Tab), TO-263CA
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: SiC (Silicon Carbide Junction Transistor)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 158A (Tc)
Rds On (Max) @ Id, Vgs: 9.1mOhm @ 92.1A, 20V
Power Dissipation (Max): 535W (Tc)
Vgs(th) (Max) @ Id: 5.6V @ 18.7mA
Supplier Device Package: PG-TO263-7-12
Drive Voltage (Max Rds On, Min Rds On): 15V, 20V
Vgs (Max): +23V, -7V
Drain to Source Voltage (Vdss): 650 V
Gate Charge (Qg) (Max) @ Vgs: 112 nC @ 18 V
Input Capacitance (Ciss) (Max) @ Vds: 4001 pF @ 400 V
на замовлення 482 шт:
термін постачання 21-31 дні (днів)
1+1731.45 грн
10+1335.12 грн
25+1252.09 грн
100+1089.42 грн
250+1048.59 грн
В кошику  од. на суму  грн.
FS200R12N3T4RB81BPSA1 FS200R12N3T4RB81BPSA1 Infineon Technologies Description: LOW POWER ECONO AG-ECONO3-4
Packaging: Tray
на замовлення 10 шт:
термін постачання 21-31 дні (днів)
1+11489.41 грн
10+9827.80 грн
В кошику  од. на суму  грн.
IRS2607DSTRPBF IRS2607DSTRPBF Infineon Technologies fundamentals-of-power-semiconductors Description: IC GATE DRVR HALF-BRIDGE 8SOIC
Packaging: Tape & Reel (TR)
Package / Case: 8-SOIC (0.154", 3.90mm Width)
Mounting Type: Surface Mount
Operating Temperature: -40°C ~ 150°C (TJ)
Voltage - Supply: 10V ~ 20V
Input Type: Non-Inverting
High Side Voltage - Max (Bootstrap): 600 V
Supplier Device Package: 8-SOIC
Rise / Fall Time (Typ): 150ns, 50ns
Channel Type: Independent
Driven Configuration: Half-Bridge
Number of Drivers: 2
Gate Type: IGBT, MOSFET (N-Channel)
Logic Voltage - VIL, VIH: 0.8V, 2.2V
Current - Peak Output (Source, Sink): 200mA, 350mA
DigiKey Programmable: Not Verified
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IRS2607DSTRPBF IRS2607DSTRPBF Infineon Technologies fundamentals-of-power-semiconductors Description: IC GATE DRVR HALF-BRIDGE 8SOIC
Packaging: Cut Tape (CT)
Package / Case: 8-SOIC (0.154", 3.90mm Width)
Mounting Type: Surface Mount
Operating Temperature: -40°C ~ 150°C (TJ)
Voltage - Supply: 10V ~ 20V
Input Type: Non-Inverting
High Side Voltage - Max (Bootstrap): 600 V
Supplier Device Package: 8-SOIC
Rise / Fall Time (Typ): 150ns, 50ns
Channel Type: Independent
Driven Configuration: Half-Bridge
Number of Drivers: 2
Gate Type: IGBT, MOSFET (N-Channel)
Logic Voltage - VIL, VIH: 0.8V, 2.2V
Current - Peak Output (Source, Sink): 200mA, 350mA
DigiKey Programmable: Not Verified
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F3L300R12MT4PB23BPSA1 F3L300R12MT4PB23BPSA1 Infineon Technologies Infineon-F3L300R12MT4P_B23-DS-v03_00-EN.pdf?fileId=5546d4625debb399015e18a7da1f3327 Description: IGBT MOD 1200V 300A 20MW
Packaging: Bulk
Package / Case: Module
Mounting Type: Chassis Mount
Input: Standard
Configuration: Half Bridge
Operating Temperature: -40°C ~ 150°C (TJ)
Vce(on) (Max) @ Vge, Ic: 2.1V @ 15V, 300A
NTC Thermistor: Yes
Supplier Device Package: Module
IGBT Type: Trench Field Stop
Current - Collector (Ic) (Max): 300 A
Voltage - Collector Emitter Breakdown (Max): 1200 V
Current - Collector Cutoff (Max): 1 mA
Input Capacitance (Cies) @ Vce: 19 nF @ 25 V
на замовлення 15 шт:
термін постачання 21-31 дні (днів)
2+18635.43 грн
Мінімальне замовлення: 2
В кошику  од. на суму  грн.
F3L300R12MT4PB23BPSA1 F3L300R12MT4PB23BPSA1 Infineon Technologies Infineon-F3L300R12MT4P_B23-DS-v03_00-EN.pdf?fileId=5546d4625debb399015e18a7da1f3327 Description: IGBT MOD 1200V 300A 20MW
Packaging: Tray
Package / Case: Module
Mounting Type: Chassis Mount
Input: Standard
Configuration: Half Bridge
Operating Temperature: -40°C ~ 150°C (TJ)
Vce(on) (Max) @ Vge, Ic: 2.1V @ 15V, 300A
NTC Thermistor: Yes
Supplier Device Package: Module
IGBT Type: Trench Field Stop
Current - Collector (Ic) (Max): 300 A
Voltage - Collector Emitter Breakdown (Max): 1200 V
Current - Collector Cutoff (Max): 1 mA
Input Capacitance (Cies) @ Vce: 19 nF @ 25 V
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F3L300R12MT4PB22BPSA1 F3L300R12MT4PB22BPSA1 Infineon Technologies Infineon-F3L300R12MT4P_B22-DS-v03_00-EN.pdf?fileId=5546d4625debb399015e18a84176332d Description: IGBT MODULE MED POWER ECONO
Packaging: Bulk
на замовлення 3 шт:
термін постачання 21-31 дні (днів)
2+18635.43 грн
Мінімальне замовлення: 2
В кошику  од. на суму  грн.
F3L300R12MT4PB22BPSA1 F3L300R12MT4PB22BPSA1 Infineon Technologies Infineon-F3L300R12MT4P_B22-DS-v03_00-EN.pdf?fileId=5546d4625debb399015e18a84176332d Description: IGBT MODULE MED POWER ECONO
Packaging: Tray
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IR21844PBF IR21844PBF Infineon Technologies ir2184.pdf?fileId=5546d462533600a4015355c955e616d4 description Description: IC GATE DRVR HALF-BRIDGE 14DIP
Packaging: Bulk
Package / Case: 14-DIP (0.300", 7.62mm)
Mounting Type: Through Hole
Operating Temperature: -40°C ~ 150°C (TJ)
Voltage - Supply: 10V ~ 20V
Input Type: Non-Inverting
High Side Voltage - Max (Bootstrap): 600 V
Supplier Device Package: 14-DIP
Rise / Fall Time (Typ): 40ns, 20ns
Channel Type: Synchronous
Driven Configuration: Half-Bridge
Number of Drivers: 2
Gate Type: IGBT, MOSFET (N-Channel)
Logic Voltage - VIL, VIH: 0.8V, 2.7V
Current - Peak Output (Source, Sink): 1.9A, 2.3A
DigiKey Programmable: Not Verified
на замовлення 907 шт:
термін постачання 21-31 дні (днів)
90+235.70 грн
Мінімальне замовлення: 90
В кошику  од. на суму  грн.
IR21844PBF IR21844PBF Infineon Technologies ir2184.pdf?fileId=5546d462533600a4015355c955e616d4 description Description: IC GATE DRVR HALF-BRIDGE 14DIP
Packaging: Tube
Package / Case: 14-DIP (0.300", 7.62mm)
Mounting Type: Through Hole
Operating Temperature: -40°C ~ 150°C (TJ)
Voltage - Supply: 10V ~ 20V
Input Type: Non-Inverting
High Side Voltage - Max (Bootstrap): 600 V
Supplier Device Package: 14-DIP
Rise / Fall Time (Typ): 40ns, 20ns
Channel Type: Synchronous
Driven Configuration: Half-Bridge
Number of Drivers: 2
Gate Type: IGBT, MOSFET (N-Channel)
Logic Voltage - VIL, VIH: 0.8V, 2.7V
Current - Peak Output (Source, Sink): 1.9A, 2.3A
DigiKey Programmable: Not Verified
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IRFS4127PBF IRFS4127PBF Infineon Technologies irfs4127pbf.pdf?fileId=5546d462533600a401535636ee7b2192 description Description: MOSFET N-CH 200V 72A D2PAK
Packaging: Tube
Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 72A (Tc)
Rds On (Max) @ Id, Vgs: 22mOhm @ 44A, 10V
Power Dissipation (Max): 375W (Tc)
Vgs(th) (Max) @ Id: 5V @ 250µA
Supplier Device Package: D2PAK
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 200 V
Gate Charge (Qg) (Max) @ Vgs: 150 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 5380 pF @ 50 V
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IHW20N135R3FKSA1 DS_IHW20N135R3.pdf?folderId=db3a3043156fd5730115f56849b61941&fileId=db3a30433162923a0131897157e40e46
IHW20N135R3FKSA1
Виробник: Infineon Technologies
Description: IGBT TRENCH 1350V 40A TO247-3
Packaging: Bulk
Package / Case: TO-247-3
Mounting Type: Through Hole
Operating Temperature: -40°C ~ 175°C (TJ)
Input Type: Standard
Vce(on) (Max) @ Vge, Ic: 1.8V @ 15V, 20A
Supplier Device Package: PG-TO247-3-1
IGBT Type: Trench
Td (on/off) @ 25°C: -/335ns
Switching Energy: 1.3mJ (off)
Test Condition: 600V, 20A, 15Ohm, 15V
Gate Charge: 195 nC
Current - Collector (Ic) (Max): 40 A
Voltage - Collector Emitter Breakdown (Max): 1350 V
Current - Collector Pulsed (Icm): 60 A
Power - Max: 310 W
на замовлення 13692 шт:
термін постачання 21-31 дні (днів)
Кількість Ціна
140+155.04 грн
Мінімальне замовлення: 140
В кошику  од. на суму  грн.
REF5QR2280BG124W1TOBO1 #!?fileId=8ac78c8c919c9f9d019233514f1f43d4
REF5QR2280BG124W1TOBO1
Виробник: Infineon Technologies
Description: REF5QR2280BG124W1TOBO1
Packaging: Box
Voltage - Output: 5V, 12V
Voltage - Input: 85 ~ 300 VAC
Current - Output: 1.92A, 200mA
Contents: Board(s)
Regulator Topology: Flyback
Utilized IC / Part: ICE5QR2280BG-1
Main Purpose: AC/DC Converter
Outputs and Type: 2 Non-Isolated Outputs
Power - Output: 24W
на замовлення 5 шт:
термін постачання 21-31 дні (днів)
Кількість Ціна
1+9459.41 грн
В кошику  од. на суму  грн.
BAV99UE6327HTSA1 bav99series.pdf
BAV99UE6327HTSA1
Виробник: Infineon Technologies
Description: DIODE ARRAY GP 80V 200MA SC74-6
Packaging: Bulk
Package / Case: SC-74, SOT-457
Mounting Type: Surface Mount
Speed: Small Signal =< 200mA (Io), Any Speed
Reverse Recovery Time (trr): 4 ns
Technology: Standard
Diode Configuration: 2 Pair Series Connection
Current - Average Rectified (Io) (per Diode): 200mA (DC)
Supplier Device Package: PG-SC74-6
Operating Temperature - Junction: 150°C (Max)
Voltage - DC Reverse (Vr) (Max): 80 V
Voltage - Forward (Vf) (Max) @ If: 1.25 V @ 150 mA
Current - Reverse Leakage @ Vr: 150 nA @ 70 V
на замовлення 3360 шт:
термін постачання 21-31 дні (днів)
Кількість Ціна
3360+6.26 грн
Мінімальне замовлення: 3360
В кошику  од. на суму  грн.
BAS16SH6727XTSA1 bas16series.pdf?folderId=db3a30431400ef6801141b5844e103ea&fileId=db3a30431400ef6801141b93811b03ff
BAS16SH6727XTSA1
Виробник: Infineon Technologies
Description: DIODE ARR GP 80V 200MA SOT363-PO
Packaging: Tape & Reel (TR)
Package / Case: 6-VSSOP, SC-88, SOT-363
Mounting Type: Surface Mount
Speed: Small Signal =< 200mA (Io), Any Speed
Reverse Recovery Time (trr): 4 ns
Technology: Standard
Diode Configuration: 3 Independent
Current - Average Rectified (Io) (per Diode): 200mA (DC)
Supplier Device Package: PG-SOT363-PO
Operating Temperature - Junction: 150°C (Max)
Voltage - DC Reverse (Vr) (Max): 80 V
Voltage - Forward (Vf) (Max) @ If: 1.25 V @ 150 mA
Current - Reverse Leakage @ Vr: 1 µA @ 75 V
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BGA231N7E6327XTSA2 BGA231N7.pdf
BGA231N7E6327XTSA2
Виробник: Infineon Technologies
Description: IC AMP GPS 1.55-1.615GHZ TSLP7-1
Packaging: Tape & Reel (TR)
Package / Case: 6-XFDFN Exposed Pad
Mounting Type: Surface Mount
Frequency: 1.55GHz ~ 1.615GHz
RF Type: GPS
Voltage - Supply: 1.5V ~ 3.6V
Gain: 16dB
Current - Supply: 4.4mA
Noise Figure: 0.75dB
P1dB: -5dBm
Test Frequency: 1.55GHz ~ 1.615GHz
Supplier Device Package: PG-TSLP-7-1
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BGA231N7E6327XTSA2 BGA231N7.pdf
BGA231N7E6327XTSA2
Виробник: Infineon Technologies
Description: IC AMP GPS 1.55-1.615GHZ TSLP7-1
Packaging: Cut Tape (CT)
Package / Case: 6-XFDFN Exposed Pad
Mounting Type: Surface Mount
Frequency: 1.55GHz ~ 1.615GHz
RF Type: GPS
Voltage - Supply: 1.5V ~ 3.6V
Gain: 16dB
Current - Supply: 4.4mA
Noise Figure: 0.75dB
P1dB: -5dBm
Test Frequency: 1.55GHz ~ 1.615GHz
Supplier Device Package: PG-TSLP-7-1
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CY8C4148AXQ-S445 Infineon-PSOC_4_PSOC_4100S_PLUS_256KB_DATASHEET_PROGRAMMABLE_SYSTEM-ON-CHIP_(PSOC)-DataSheet-v05_00-EN.pdf?fileId=8ac78c8c7d0d8da4017d0ee8193c7109
CY8C4148AXQ-S445
Виробник: Infineon Technologies
Description: IC MCU 32BIT 256KB FLASH 100TQFP
Packaging: Tray
Package / Case: 100-LQFP
Mounting Type: Surface Mount
Speed: 48MHz
Program Memory Size: 256KB (256K x 8)
RAM Size: 32K x 8
Operating Temperature: -40°C ~ 105°C (TA)
Oscillator Type: External, Internal
Program Memory Type: FLASH
Core Processor: ARM® Cortex®-M0+
Data Converters: A/D 16x10b SAR, 16x12b Sigma-Delta; D/A 2x7/8b
Core Size: 32-Bit
Voltage - Supply (Vcc/Vdd): 1.71V ~ 5.5V
Connectivity: FIFO, I2C, IrDA, LINbus, Microwire, QSPI, SmartCard, SPI, SSP, UART/USART
Peripherals: Brown-out Detect/Reset, CapSense, DMA, LCD, LVD, POR, PWM, Temp Sensor, WDT
Supplier Device Package: 100-TQFP (14x14)
Number of I/O: 54
DigiKey Programmable: Not Verified
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S6E2CC9J0AGB1000A download
S6E2CC9J0AGB1000A
Виробник: Infineon Technologies
Description: IC MCU 32BIT 1.5MB FLASH 192FBGA
Packaging: Tray
Package / Case: 192-LFBGA
Mounting Type: Surface Mount
Speed: 200MHz
Program Memory Size: 1.5MB (1.5M x 8)
RAM Size: 192K x 8
Operating Temperature: -40°C ~ 125°C (TA)
Oscillator Type: Internal
Program Memory Type: FLASH
Core Processor: ARM® Cortex®-M4F
Data Converters: A/D 32x12b; D/A 2x12b
Core Size: 32-Bit Single-Core
Voltage - Supply (Vcc/Vdd): 2.7V ~ 5.5V
Connectivity: CANbus, CSIO, EBI/EMI, Ethernet, I2C, LINbus, SD, SPI, UART/USART, USB
Peripherals: DMA, I2S, LVD, POR, PWM, WDT
Supplier Device Package: 192-FBGA (12x12)
Number of I/O: 152
DigiKey Programmable: Not Verified
на замовлення 1176 шт:
термін постачання 21-31 дні (днів)
Кількість Ціна
1+1001.47 грн
10+764.31 грн
25+714.29 грн
168+653.68 грн
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IRG4BC40UPBF description irg4bc40upbf.pdf?fileId=5546d462533600a4015356433c83229e
IRG4BC40UPBF
Виробник: Infineon Technologies
Description: IGBT 600V 40A TO-220AB
Packaging: Tube
Package / Case: TO-220-3
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Input Type: Standard
Vce(on) (Max) @ Vge, Ic: 2.1V @ 15V, 20A
Supplier Device Package: TO-220AB
Td (on/off) @ 25°C: 34ns/110ns
Switching Energy: 320µJ (on), 350µJ (off)
Test Condition: 480V, 20A, 10Ohm, 15V
Gate Charge: 100 nC
Current - Collector (Ic) (Max): 40 A
Voltage - Collector Emitter Breakdown (Max): 600 V
Current - Collector Pulsed (Icm): 160 A
Power - Max: 160 W
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FM1608B-SGTR FM1608B.pdf
FM1608B-SGTR
Виробник: Infineon Technologies
Description: IC FRAM 64KBIT PARALLEL 28SOIC
Packaging: Tape & Reel (TR)
Package / Case: 28-SOIC (0.295", 7.50mm Width)
Mounting Type: Surface Mount
Memory Size: 64Kbit
Memory Type: Non-Volatile
Operating Temperature: -40°C ~ 85°C (TA)
Voltage - Supply: 4.5V ~ 5.5V
Technology: FRAM (Ferroelectric RAM)
Memory Format: FRAM
Supplier Device Package: 28-SOIC
Write Cycle Time - Word, Page: 130ns
Memory Interface: Parallel
Memory Organization: 8K x 8
DigiKey Programmable: Not Verified
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KP465XTMA1 Infineon-KP465-DataSheet-v01_00-EN.pdf?fileId=8ac78c8c92bcf0b001930222427f1609
KP465XTMA1
Виробник: Infineon Technologies
Description: MEMS GROWTH
Packaging: Tape & Reel (TR)
Package / Case: 8-SMD, Flat Leads, Exposed Pad
Output Type: SPI
Mounting Type: Surface Mount
Output: 14 b
Operating Pressure: 8.7PSI ~ 46.41PSI (60kPa ~ 320kPa)
Pressure Type: Absolute
Accuracy: ±0.435PSI (±3kPa)
Operating Temperature: -40°C ~ 125°C
Voltage - Supply: 3V ~ 5.25V
Applications: Board Mount, Industrial Automation
Supplier Device Package: PG-DFN-8-1
Port Style: No Port
Maximum Pressure: 87.02PSI (600kPa)
Grade: Automotive
Qualification: AEC-Q103-002
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KP465XTMA1 Infineon-KP465-DataSheet-v01_00-EN.pdf?fileId=8ac78c8c92bcf0b001930222427f1609
KP465XTMA1
Виробник: Infineon Technologies
Description: MEMS GROWTH
Packaging: Cut Tape (CT)
Package / Case: 8-SMD, Flat Leads, Exposed Pad
Output Type: SPI
Mounting Type: Surface Mount
Output: 14 b
Operating Pressure: 8.7PSI ~ 46.41PSI (60kPa ~ 320kPa)
Pressure Type: Absolute
Accuracy: ±0.435PSI (±3kPa)
Operating Temperature: -40°C ~ 125°C
Voltage - Supply: 3V ~ 5.25V
Applications: Board Mount, Industrial Automation
Supplier Device Package: PG-DFN-8-1
Port Style: No Port
Maximum Pressure: 87.02PSI (600kPa)
Grade: Automotive
Qualification: AEC-Q103-002
на замовлення 1000 шт:
термін постачання 21-31 дні (днів)
Кількість Ціна
2+251.80 грн
10+181.74 грн
25+166.53 грн
100+140.68 грн
250+133.24 грн
500+128.76 грн
1000+123.02 грн
Мінімальне замовлення: 2
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CY25568SXCT Infineon-CY25568_Spread_Spectrum_Clock_Generator_Datasheet-AdditionalTechnicalInformation-v09_00-EN.pdf?fileId=8ac78c8c7d0d8da4017d0ec603023c21
CY25568SXCT
Виробник: Infineon Technologies
Description: IC CLK/FREQ SYNTH 16SOIC
Packaging: Bulk
Package / Case: 16-SOIC (0.154", 3.90mm Width)
Mounting Type: Surface Mount
Output: Clock
Frequency - Max: 128MHz
Type: Clock/Frequency Synthesizer, Fanout Distribution, Frequency Modulator, Spread Spectrum Clock Generator
Input: Clock, Crystal, Resonator
Operating Temperature: 0°C ~ 70°C
Voltage - Supply: 2.9V ~ 3.6V
Ratio - Input:Output: 1:4
Differential - Input:Output: No/No
Supplier Device Package: 16-SOIC
PLL: Yes
Divider/Multiplier: Yes/Yes
Number of Circuits: 1
DigiKey Programmable: Not Verified
на замовлення 12500 шт:
термін постачання 21-31 дні (днів)
Кількість Ціна
42+571.62 грн
Мінімальне замовлення: 42
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CY62157EV30LL-45ZXAT
CY62157EV30LL-45ZXAT
Виробник: Infineon Technologies
Description: IC SRAM 8MBIT PARALLEL 48TSOP I
Packaging: Tape & Reel (TR)
Package / Case: 48-TFSOP (0.724", 18.40mm Width)
Mounting Type: Surface Mount
Memory Size: 8Mbit
Memory Type: Volatile
Operating Temperature: -40°C ~ 85°C (TA)
Voltage - Supply: 2.2V ~ 3.6V
Technology: SRAM - Asynchronous
Memory Format: SRAM
Supplier Device Package: 48-TSOP I
Write Cycle Time - Word, Page: 45ns
Memory Interface: Parallel
Access Time: 45 ns
Memory Organization: 512K x 16
DigiKey Programmable: Not Verified
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CY62157EV30LL-55ZSXET Infineon-CY62157EV30_MoBL_8-Mbit_(512_K_16)_Static_RAM-DataSheet-v20_00-EN.pdf?fileId=8ac78c8c7d0d8da4017d0ebe669131ef&utm_source=cypress&utm_medium=referral&utm_campaign=202110_globe_en_all_integration-files&redirId=File_4_0
CY62157EV30LL-55ZSXET
Виробник: Infineon Technologies
Description: IC SRAM 8MBIT PARALLEL 44TSOP II
Packaging: Tape & Reel (TR)
Package / Case: 44-TSOP (0.400", 10.16mm Width)
Mounting Type: Surface Mount
Memory Size: 8Mbit
Memory Type: Volatile
Operating Temperature: -40°C ~ 125°C (TA)
Voltage - Supply: 2.2V ~ 3.6V
Technology: SRAM - Asynchronous
Memory Format: SRAM
Supplier Device Package: 44-TSOP II
Write Cycle Time - Word, Page: 55ns
Memory Interface: Parallel
Access Time: 55 ns
Memory Organization: 512K x 16
DigiKey Programmable: Not Verified
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BTT60801ERLXUMA1 Infineon-BTT6080-1ERL-DataSheet-v01_00-EN.pdf?fileId=8ac78c8c92bcf0b00192dd3a20094ad3
BTT60801ERLXUMA1
Виробник: Infineon Technologies
Description: PROFET
Features: Slew Rate Controlled
Packaging: Tape & Reel (TR)
Package / Case: 14-SOIC (0.154", 3.90mm Width) Exposed Pad
Output Type: N-Channel
Mounting Type: Surface Mount
Number of Outputs: 1
Switch Type: General Purpose
Operating Temperature: -40°C ~ 150°C (TJ)
Output Configuration: High Side
Input Type: Non-Inverting
Voltage - Load: 8V ~ 36V
Voltage - Supply (Vcc/Vdd): 8V ~ 36V
Current - Output (Max): 2.5A
Ratio - Input:Output: 1:1
Supplier Device Package: PG-TDSO-14-11
Fault Protection: Current Limiting (Adjustable), Over Temperature, Over Voltage, UVLO
Grade: Automotive
Qualification: AEC-Q100
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BTT60801ERLXUMA1 Infineon-BTT6080-1ERL-DataSheet-v01_00-EN.pdf?fileId=8ac78c8c92bcf0b00192dd3a20094ad3
BTT60801ERLXUMA1
Виробник: Infineon Technologies
Description: PROFET
Features: Slew Rate Controlled
Packaging: Cut Tape (CT)
Package / Case: 14-SOIC (0.154", 3.90mm Width) Exposed Pad
Output Type: N-Channel
Mounting Type: Surface Mount
Number of Outputs: 1
Switch Type: General Purpose
Operating Temperature: -40°C ~ 150°C (TJ)
Output Configuration: High Side
Input Type: Non-Inverting
Voltage - Load: 8V ~ 36V
Voltage - Supply (Vcc/Vdd): 8V ~ 36V
Current - Output (Max): 2.5A
Ratio - Input:Output: 1:1
Supplier Device Package: PG-TDSO-14-11
Fault Protection: Current Limiting (Adjustable), Over Temperature, Over Voltage, UVLO
Grade: Automotive
Qualification: AEC-Q100
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BTT60351ERLXUMA1 Infineon-BTT6035-1ERL-DataSheet-v01_00-EN.pdf?fileId=8ac78c8c92bcf0b00192dd27d35f4ad0
BTT60351ERLXUMA1
Виробник: Infineon Technologies
Description: PROFET
Features: Slew Rate Controlled
Packaging: Tape & Reel (TR)
Package / Case: 14-SOIC (0.154", 3.90mm Width) Exposed Pad
Output Type: N-Channel
Mounting Type: Surface Mount
Number of Outputs: 1
Switch Type: Relay, Solenoid Driver
Operating Temperature: -40°C ~ 150°C (TJ)
Output Configuration: High Side
Rds On (Typ): 35mOhm
Input Type: Non-Inverting
Voltage - Load: 5V ~ 48V
Voltage - Supply (Vcc/Vdd): 5V ~ 48V
Current - Output (Max): 5A
Ratio - Input:Output: 1:1
Supplier Device Package: PG-TDSO-14-11
Fault Protection: Current Limiting (Adjustable), Over Temperature, Over Voltage, Reverse Battery, Short Circuit, UVLO
Grade: Automotive
Qualification: AEC-Q100
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BTT60351ERLXUMA1 Infineon-BTT6035-1ERL-DataSheet-v01_00-EN.pdf?fileId=8ac78c8c92bcf0b00192dd27d35f4ad0
BTT60351ERLXUMA1
Виробник: Infineon Technologies
Description: PROFET
Features: Slew Rate Controlled
Packaging: Cut Tape (CT)
Package / Case: 14-SOIC (0.154", 3.90mm Width) Exposed Pad
Output Type: N-Channel
Mounting Type: Surface Mount
Number of Outputs: 1
Switch Type: Relay, Solenoid Driver
Operating Temperature: -40°C ~ 150°C (TJ)
Output Configuration: High Side
Rds On (Typ): 35mOhm
Input Type: Non-Inverting
Voltage - Load: 5V ~ 48V
Voltage - Supply (Vcc/Vdd): 5V ~ 48V
Current - Output (Max): 5A
Ratio - Input:Output: 1:1
Supplier Device Package: PG-TDSO-14-11
Fault Protection: Current Limiting (Adjustable), Over Temperature, Over Voltage, Reverse Battery, Short Circuit, UVLO
Grade: Automotive
Qualification: AEC-Q100
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BTT60502EKAXUMA1 BTT6020_30_50-1EKA_PB.PDF?fileId=db3a3043405f2978014062e697d128ec
BTT60502EKAXUMA1
Виробник: Infineon Technologies
Description: IC PWR SWITCH N-CHAN 1:1 DSO-14
Packaging: Bulk
Package / Case: 14-SOIC (0.154", 3.90mm Width) Exposed Pad
Output Type: N-Channel
Mounting Type: Surface Mount
Number of Outputs: 2
Interface: On/Off
Switch Type: General Purpose
Operating Temperature: -40°C ~ 150°C (TJ)
Output Configuration: High Side
Rds On (Typ): 50mOhm
Voltage - Load: 5V ~ 36V
Voltage - Supply (Vcc/Vdd): Not Required
Current - Output (Max): 3A
Ratio - Input:Output: 1:1
Supplier Device Package: PG-DSO-14-40-EP
Fault Protection: Current Limiting (Fixed), Open Load Detect, Over Temperature, Over Voltage
на замовлення 1 шт:
термін постачання 21-31 дні (днів)
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AIMCQ120R060M1TXTMA1 Infineon-AIMCQ120R060M1T-DataSheet-v01_00-EN.pdf?fileId=8ac78c8c90530b3a01910fe6494e6b21
AIMCQ120R060M1TXTMA1
Виробник: Infineon Technologies
Description: SIC_DISCRETE
Packaging: Tape & Reel (TR)
Package / Case: 22-PowerBSOP Module
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: SiCFET (Silicon Carbide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 44A (Tc)
Rds On (Max) @ Id, Vgs: 75mOhm @ 13A, 20V
Power Dissipation (Max): 259W (Tc)
Vgs(th) (Max) @ Id: 5.1V @ 4.3mA
Supplier Device Package: PG-HDSOP-22
Grade: Automotive
Drive Voltage (Max Rds On, Min Rds On): 18V, 20V
Vgs (Max): +25V, -10V
Drain to Source Voltage (Vdss): 1200 V
Gate Charge (Qg) (Max) @ Vgs: 32 nC @ 20 V
Input Capacitance (Ciss) (Max) @ Vds: 880 pF @ 800 V
Qualification: AEC-Q101
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AIMCQ120R060M1TXTMA1 Infineon-AIMCQ120R060M1T-DataSheet-v01_00-EN.pdf?fileId=8ac78c8c90530b3a01910fe6494e6b21
AIMCQ120R060M1TXTMA1
Виробник: Infineon Technologies
Description: SIC_DISCRETE
Packaging: Cut Tape (CT)
Package / Case: 22-PowerBSOP Module
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: SiCFET (Silicon Carbide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 44A (Tc)
Rds On (Max) @ Id, Vgs: 75mOhm @ 13A, 20V
Power Dissipation (Max): 259W (Tc)
Vgs(th) (Max) @ Id: 5.1V @ 4.3mA
Supplier Device Package: PG-HDSOP-22
Grade: Automotive
Drive Voltage (Max Rds On, Min Rds On): 18V, 20V
Vgs (Max): +25V, -10V
Drain to Source Voltage (Vdss): 1200 V
Gate Charge (Qg) (Max) @ Vgs: 32 nC @ 20 V
Input Capacitance (Ciss) (Max) @ Vds: 880 pF @ 800 V
Qualification: AEC-Q101
на замовлення 239 шт:
термін постачання 21-31 дні (днів)
Кількість Ціна
1+778.37 грн
10+542.53 грн
100+465.08 грн
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IAUMN04S7N005GAUMA1
IAUMN04S7N005GAUMA1
Виробник: Infineon Technologies
Description: MOSFET_(20V 40V)
Packaging: Tray
Package / Case: 4-PowerSFN
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 250A (Tj)
Rds On (Max) @ Id, Vgs: 0.5mOhm @ 125A, 10V
Power Dissipation (Max): 240W (Tc)
Vgs(th) (Max) @ Id: 3V @ 140µA
Supplier Device Package: PG-HSOG-4-1
Grade: Automotive
Drive Voltage (Max Rds On, Min Rds On): 7V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 40 V
Gate Charge (Qg) (Max) @ Vgs: 185 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 12674 pF @ 20 V
Qualification: AEC-Q101
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CY8C4547AZQ-S453 Infineon-PSoC_4_PSoC_4500S_Datasheet_Programmable_System-on-Chip_(PSoC)-AdditionalTechnicalInformation-v05_00-EN.pdf?fileId=8ac78c8c7d0d8da4017d0ee812fa7101
CY8C4547AZQ-S453
Виробник: Infineon Technologies
Description: IC MCU 32BIT 128KB FLASH 48TQFP
Packaging: Tray
Package / Case: 48-LQFP
Mounting Type: Surface Mount
Speed: 48MHz
Program Memory Size: 128KB (128K x 8)
RAM Size: 32K x 8
Operating Temperature: -40°C ~ 105°C (TA)
Oscillator Type: External, Internal
Program Memory Type: FLASH
Core Processor: ARM® Cortex®-M0+
Data Converters: A/D 16x10b, 20x12b SAR; D/A 2x7/8b
Core Size: 32-Bit
Voltage - Supply (Vcc/Vdd): 1.71V ~ 5.5V
Connectivity: I2C, IrDA, LINbus, Microwire, SmartCard, SPI, SSP, UART/USART
Peripherals: Brown-out Detect/Reset, CapSense, LCD, POR, PWM, WDT
Supplier Device Package: 48-TQFP (7x7)
Number of I/O: 38
DigiKey Programmable: Not Verified
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CY8C4548AZI-S483 Infineon-PSoC_4_PSoC_4500S_Datasheet_Programmable_System-on-Chip_(PSoC)-AdditionalTechnicalInformation-v05_00-EN.pdf?fileId=8ac78c8c7d0d8da4017d0ee812fa7101
CY8C4548AZI-S483
Виробник: Infineon Technologies
Description: IC MCU 32BIT 256KB FLASH 48TQFP
Packaging: Tray
Package / Case: 48-LQFP
Mounting Type: Surface Mount
Speed: 48MHz
Program Memory Size: 256KB (256K x 8)
RAM Size: 32K x 8
Operating Temperature: -40°C ~ 85°C (TA)
Oscillator Type: External
Program Memory Type: FLASH
Core Processor: ARM® Cortex®-M0+
Data Converters: A/D 16x10b Slope, 16x12b SAR; D/A 2xIDAC
Core Size: 32-Bit Single-Core
Voltage - Supply (Vcc/Vdd): 1.71V ~ 5.5V
Connectivity: I2C, IrDA, LINbus, Microwire, SmartCard, SPI, SSP, UART/USART
Peripherals: Brown-out Detect/Reset, CapSense, LCD, POR, PWM, WDT
Supplier Device Package: 48-TQFP (7x7)
Number of I/O: 38
DigiKey Programmable: Not Verified
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CY8C4548AZI-S485 Infineon-PSoC_4_PSoC_4500S_Datasheet_Programmable_System-on-Chip_(PSoC)-AdditionalTechnicalInformation-v05_00-EN.pdf?fileId=8ac78c8c7d0d8da4017d0ee812fa7101
CY8C4548AZI-S485
Виробник: Infineon Technologies
Description: IC MCU 32BIT 256KB FLASH 64TQFP
Packaging: Tray
Package / Case: 64-LQFP
Mounting Type: Surface Mount
Speed: 48MHz
Program Memory Size: 256KB (256K x 8)
RAM Size: 32K x 8
Operating Temperature: -40°C ~ 85°C (TA)
Oscillator Type: External
Program Memory Type: FLASH
Core Processor: ARM® Cortex®-M0+
Data Converters: A/D 16x10b Slope, 16x12b SAR; D/A 2xIDAC
Core Size: 32-Bit Single-Core
Voltage - Supply (Vcc/Vdd): 1.71V ~ 5.5V
Connectivity: I2C, IrDA, LINbus, Microwire, SmartCard, SPI, SSP, UART/USART
Peripherals: Brown-out Detect/Reset, CapSense, LCD, POR, PWM, WDT
Supplier Device Package: 64-TQFP (10x10)
Number of I/O: 53
DigiKey Programmable: Not Verified
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CY8C4547AZI-S463 Infineon-PSoC_4_PSoC_4500S_Datasheet_Programmable_System-on-Chip_(PSoC)-AdditionalTechnicalInformation-v05_00-EN.pdf?fileId=8ac78c8c7d0d8da4017d0ee812fa7101
CY8C4547AZI-S463
Виробник: Infineon Technologies
Description: IC MCU 32BIT 128KB FLASH 48TQFP
Packaging: Tray
Package / Case: 48-LQFP
Mounting Type: Surface Mount
Speed: 48MHz
Program Memory Size: 128KB (128K x 8)
RAM Size: 32K x 8
Operating Temperature: -40°C ~ 85°C (TA)
Oscillator Type: External
Program Memory Type: FLASH
Core Processor: ARM® Cortex®-M0+
Data Converters: A/D 16x10b Slope, 16x12b SAR; D/A 2xIDAC
Core Size: 32-Bit Single-Core
Voltage - Supply (Vcc/Vdd): 1.71V ~ 5.5V
Connectivity: I2C, IrDA, LINbus, Microwire, SmartCard, SPI, SSP, UART/USART
Peripherals: Brown-out Detect/Reset, CapSense, LCD, POR, PWM, WDT
Supplier Device Package: 48-TQFP (7x7)
Number of I/O: 38
DigiKey Programmable: Not Verified
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CY8C26233-24PXI CY8C25122%2C26233%2C26443%2C26643.pdf
CY8C26233-24PXI
Виробник: Infineon Technologies
Description: IC MCU 8BIT 8KB FLASH 20DIP
Packaging: Tube
Package / Case: 20-DIP (0.300", 7.62mm)
Mounting Type: Through Hole
Speed: 24MHz
Program Memory Size: 8KB (8K x 8)
RAM Size: 256 x 8
Operating Temperature: -40°C ~ 85°C (TA)
Oscillator Type: Internal
Program Memory Type: FLASH
Core Processor: M8C
Data Converters: A/D 1x8b, 1x11b, 1x12b; D/A 1x9b
Core Size: 8-Bit
Voltage - Supply (Vcc/Vdd): 3V ~ 5.25V
Connectivity: SPI, UART/USART
Peripherals: LVD, POR, PWM, WDT
Supplier Device Package: 20-DIP
Number of I/O: 16
DigiKey Programmable: Not Verified
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TDA386410000AUMA1 Infineon-TDA38641-0000-DataSheet-v01_00-EN.pdf?fileId=8ac78c8c93dda25b01946ea0ecd10409
TDA386410000AUMA1
Виробник: Infineon Technologies
Description: IFX POL
Packaging: Cut Tape (CT)
Package / Case: 36-PowerVFQFN
Output Type: Programmable
Mounting Type: Surface Mount
Number of Outputs: 1
Function: Step-Down
Current - Output: 40A
Operating Temperature: -40°C ~ 125°C (TJ)
Output Configuration: Positive
Frequency - Switching: 600kHz ~ 1.2MHz
Voltage - Input (Max): 5.5V, 17V
Topology: Buck
Supplier Device Package: PG-IQFN-36-3
Synchronous Rectifier: Yes
Voltage - Output (Max): 3.04V
Voltage - Input (Min): 3V, 4.5V
Voltage - Output (Min/Fixed): 0.25V
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TDA386410000AUMA1 Infineon-TDA38641-0000-DataSheet-v01_00-EN.pdf?fileId=8ac78c8c93dda25b01946ea0ecd10409
TDA386410000AUMA1
Виробник: Infineon Technologies
Description: IFX POL
Packaging: Tray
Package / Case: 36-PowerVFQFN
Output Type: Programmable
Mounting Type: Surface Mount
Number of Outputs: 1
Function: Step-Down
Current - Output: 40A
Operating Temperature: -40°C ~ 125°C (TJ)
Output Configuration: Positive
Frequency - Switching: 600kHz ~ 1.2MHz
Voltage - Input (Max): 5.5V, 17V
Topology: Buck
Supplier Device Package: PG-IQFN-36-3
Synchronous Rectifier: Yes
Voltage - Output (Max): 3.04V
Voltage - Input (Min): 3V, 4.5V
Voltage - Output (Min/Fixed): 0.25V
на замовлення 5000 шт:
термін постачання 21-31 дні (днів)
Кількість Ціна
5000+176.19 грн
Мінімальне замовлення: 5000
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TDA38641A0000AUMA1
Виробник: Infineon Technologies
Description: IFX POL
Packaging: Tape & Reel (TR)
Package / Case: 36-PowerVFQFN
Output Type: Programmable
Mounting Type: Surface Mount
Number of Outputs: 1
Function: Step-Down
Current - Output: 40A
Operating Temperature: -40°C ~ 125°C (TJ)
Output Configuration: Positive
Frequency - Switching: 600kHz ~ 1.2MHz
Voltage - Input (Max): 17V
Topology: Buck
Supplier Device Package: PG-IQFN-36-3
Synchronous Rectifier: Yes
Voltage - Output (Max): 3.04V
Voltage - Input (Min): 5V
Voltage - Output (Min/Fixed): 0.25V
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CY7C1168KV18-400BZXC Infineon-CY7C1168KV18_CY7C1170KV18_18-Mbit_DDR_II+_SRAM_Two-Word_Burst_Architecture_(2.5_Cycle_Read_Latency)-DataSheet-v10_00-EN.pdf?fileId=8ac78c8c7d0d8da4017d0ebdb60c308a&utm_source=cypress&utm_medium=referral&utm_campaign=
CY7C1168KV18-400BZXC
Виробник: Infineon Technologies
Description: IC SRAM 18MBIT PARALLEL 165FBGA
Packaging: Tray
Package / Case: 165-LBGA
Mounting Type: Surface Mount
Memory Size: 18Mbit
Memory Type: Volatile
Operating Temperature: 0°C ~ 70°C (TA)
Voltage - Supply: 1.7V ~ 1.9V
Technology: SRAM - Synchronous, DDR II+
Clock Frequency: 400 MHz
Memory Format: SRAM
Supplier Device Package: 165-FBGA (13x15)
Memory Interface: Parallel
Memory Organization: 1M x 18
DigiKey Programmable: Not Verified
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ISP670P06NMAXTSA1 Infineon-ISP670P06NMA-DataSheet-v02_00-EN.pdf?fileId=8ac78c8c919c9f9d01921ed361683c30
ISP670P06NMAXTSA1
Виробник: Infineon Technologies
Description: ISP670P06NMAXTSA1
Packaging: Tape & Reel (TR)
Package / Case: TO-261-4, TO-261AA
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: P-Channel
Current - Continuous Drain (Id) @ 25°C: 3.7A (Ta), 6.4A (Tc)
Rds On (Max) @ Id, Vgs: 67mOhm @ 3.7A, 10V
Power Dissipation (Max): 1.8W (Ta), 5W (Tc)
Vgs(th) (Max) @ Id: 4V @ 1.037mA
Supplier Device Package: PG-SOT223-4-21
Grade: Automotive
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 60 V
Gate Charge (Qg) (Max) @ Vgs: 48 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 1800 pF @ 30 V
Qualification: AEC-Q101
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ISP670P06NMAXTSA1 Infineon-ISP670P06NMA-DataSheet-v02_00-EN.pdf?fileId=8ac78c8c919c9f9d01921ed361683c30
ISP670P06NMAXTSA1
Виробник: Infineon Technologies
Description: ISP670P06NMAXTSA1
Packaging: Cut Tape (CT)
Package / Case: TO-261-4, TO-261AA
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: P-Channel
Current - Continuous Drain (Id) @ 25°C: 3.7A (Ta), 6.4A (Tc)
Rds On (Max) @ Id, Vgs: 67mOhm @ 3.7A, 10V
Power Dissipation (Max): 1.8W (Ta), 5W (Tc)
Vgs(th) (Max) @ Id: 4V @ 1.037mA
Supplier Device Package: PG-SOT223-4-21
Grade: Automotive
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 60 V
Gate Charge (Qg) (Max) @ Vgs: 48 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 1800 pF @ 30 V
Qualification: AEC-Q101
на замовлення 735 шт:
термін постачання 21-31 дні (днів)
Кількість Ціна
3+146.82 грн
10+90.51 грн
100+61.29 грн
500+45.77 грн
Мінімальне замовлення: 3
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AUIRF9540N AUIRF9540N.pdf
AUIRF9540N
Виробник: Infineon Technologies
Description: MOSFET P-CH 100V 23A TO220
Packaging: Tube
Package / Case: TO-220-3
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: P-Channel
Current - Continuous Drain (Id) @ 25°C: 23A (Tc)
Rds On (Max) @ Id, Vgs: 117mOhm @ 11A, 10V
Power Dissipation (Max): 140W (Tc)
Vgs(th) (Max) @ Id: 4V @ 250µA
Supplier Device Package: TO-220AB
Grade: Automotive
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 100 V
Gate Charge (Qg) (Max) @ Vgs: 97 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 1300 pF @ 25 V
Qualification: AEC-Q101
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S29GL256P11TFIV23 128_Mbit_3_V_Page_Flash_with_90_nm_MirrorBit_Process_Technology-DataSheet-v03_00-EN.pdf?fileId=8ac78c8c7d0d8da4017d0ed7850458a5&utm_source=cypress&utm_medium=ref
S29GL256P11TFIV23
Виробник: Infineon Technologies
Description: IC FLASH 256MBIT PARALLEL 56TSOP
Packaging: Tape & Reel (TR)
Package / Case: 56-TFSOP (0.724", 18.40mm Width)
Mounting Type: Surface Mount
Memory Size: 256Mbit
Memory Type: Non-Volatile
Operating Temperature: -40°C ~ 85°C (TA)
Voltage - Supply: 1.65V ~ 3.6V
Technology: FLASH - NOR
Memory Format: FLASH
Supplier Device Package: 56-TSOP
Write Cycle Time - Word, Page: 110ns
Memory Interface: Parallel
Access Time: 110 ns
Memory Organization: 32M x 8
DigiKey Programmable: Not Verified
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BC846UE6727HTSA1 bc846s_bc846u_bc847s.pdf?folderId=db3a304314dca389011541d30fa21656&fileId=db3a304314dca3890115423ee6b71751
BC846UE6727HTSA1
Виробник: Infineon Technologies
Description: TRANS 2NPN 65V 100MA PG-SC74-6
Packaging: Tape & Reel (TR)
Package / Case: SC-74, SOT-457
Mounting Type: Surface Mount
Transistor Type: 2 NPN (Dual)
Operating Temperature: 150°C (TJ)
Power - Max: 250mW
Current - Collector (Ic) (Max): 100mA
Voltage - Collector Emitter Breakdown (Max): 65V
Vce Saturation (Max) @ Ib, Ic: 600mV @ 5mA, 100mA
Current - Collector Cutoff (Max): 15nA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce: 200 @ 2mA, 5V
Frequency - Transition: 250MHz
Supplier Device Package: PG-SC74-6
Grade: Automotive
Qualification: AEC-Q101
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65DN06B02ELEMXPSA1 Infineon-65DN06B02-DataSheet-v03_01-EN.pdf?fileId=5546d4627506bb320175079ef4d40391
65DN06B02ELEMXPSA1
Виробник: Infineon Technologies
Description: DIODE STD 600V 15130A BGDELEM1
Packaging: Bulk
Package / Case: DO-200AC, K-PUK
Mounting Type: Clamp On
Speed: Standard Recovery >500ns, > 200mA (Io)
Technology: Standard
Current - Average Rectified (Io): 15130A
Supplier Device Package: BG-D-ELEM-1
Operating Temperature - Junction: 180°C (Max)
Voltage - DC Reverse (Vr) (Max): 600 V
Voltage - Forward (Vf) (Max) @ If: 890 mV @ 8000 A
Current - Reverse Leakage @ Vr: 100 mA @ 600 V
на замовлення 20 шт:
термін постачання 21-31 дні (днів)
Кількість Ціна
1+39813.50 грн
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CY8C4146AZS-S275 Infineon-Automotive_PSoC_4100S_Plus-DataSheet-v01_00-EN.pdf?fileId=8ac78c8c8823155701884daaa2621e33
CY8C4146AZS-S275
Виробник: Infineon Technologies
Description: IC MCU 32BIT 64KB FLASH 64LQFP
Packaging: Tray
Package / Case: 64-LQFP
Mounting Type: Surface Mount
Speed: 48MHz
Program Memory Size: 64KB (64K x 8)
RAM Size: 8K x 8
Operating Temperature: -40°C ~ 105°C (TA)
Oscillator Type: External, Internal
Program Memory Type: FLASH
Core Processor: ARM® Cortex®-M0+
Data Converters: A/D 16x10/16x12b SAR; D/A 2x7b
Core Size: 32-Bit
Voltage - Supply (Vcc/Vdd): 1.71V ~ 5.5V
Connectivity: I2C, IrDA, LINbus, Microwire, SmartCard, SPI, SSP, UART/USART
Peripherals: Brown-out Detect/Reset, CapSense, LCD, LVD, POR, PWM, WDT
Supplier Device Package: 64-TQFP (10x10)
Grade: Automotive
Number of I/O: 54
Qualification: AEC-Q100
на замовлення 1600 шт:
термін постачання 21-31 дні (днів)
Кількість Ціна
1+613.51 грн
10+457.47 грн
25+424.04 грн
160+354.50 грн
320+343.27 грн
480+337.65 грн
960+324.00 грн
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IRFB7434GPBF IR_PartNumberingSystem.pdf
IRFB7434GPBF
Виробник: Infineon Technologies
Description: MOSFET N CH 40V 195A TO220AB
Packaging: Bulk
Package / Case: TO-220-3
Mounting Type: Through Hole
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 195A (Tc)
Rds On (Max) @ Id, Vgs: 1.6mOhm @ 100A, 10V
Vgs(th) (Max) @ Id: 3.9V @ 250µA
Supplier Device Package: TO-220-3
Drive Voltage (Max Rds On, Min Rds On): 6V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 40 V
Gate Charge (Qg) (Max) @ Vgs: 324 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 10820 pF @ 25 V
на замовлення 2 шт:
термін постачання 21-31 дні (днів)
Кількість Ціна
2+10485.89 грн
Мінімальне замовлення: 2
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MB91F577BPMC-GSK5E2
MB91F577BPMC-GSK5E2
Виробник: Infineon Technologies
Description: IC MCU 32B 1.0625MB FLSH 144LQFP
Packaging: Tray
Package / Case: 144-LQFP
Mounting Type: Surface Mount
Speed: 80MHz
Program Memory Size: 1.0625MB (1.0625M x 8)
RAM Size: 72K x 8
Operating Temperature: -40°C ~ 105°C (TA)
Oscillator Type: External
Program Memory Type: FLASH
EEPROM Size: 64K x 8
Core Processor: FR81S
Data Converters: A/D 40x8/10b; D/A 2x8b
Core Size: 32-Bit Single-Core
Voltage - Supply (Vcc/Vdd): 3V ~ 5.5V
Connectivity: CANbus, CSIO, EBI/EMI, I2C, LINbus, SPI, UART/USART
Peripherals: DMA, LCD, LVD, POR, PWM, WDT
Supplier Device Package: 144-LQFP (20x20)
Number of I/O: 111
DigiKey Programmable: Not Verified
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MB91F577BHSPMC-GSK5E1 download
MB91F577BHSPMC-GSK5E1
Виробник: Infineon Technologies
Description: IC MCU 32B 1.0625MB FLSH 144LQFP
Packaging: Tray
Package / Case: 144-LQFP
Mounting Type: Surface Mount
Speed: 80MHz
Program Memory Size: 1.0625MB (1.0625M x 8)
RAM Size: 72K x 8
Operating Temperature: -40°C ~ 105°C (TA)
Oscillator Type: External
Program Memory Type: FLASH
EEPROM Size: 64K x 8
Core Processor: FR81S
Data Converters: A/D 40x8/10b; D/A 2x8b
Core Size: 32-Bit Single-Core
Voltage - Supply (Vcc/Vdd): 3V ~ 5.5V
Connectivity: CANbus, CSIO, EBI/EMI, I2C, LINbus, SPI, UART/USART
Peripherals: DMA, LCD, LVD, POR, PWM, WDT
Supplier Device Package: 144-LQFP (20x20)
Number of I/O: 111
DigiKey Programmable: Not Verified
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IMBG65R060M2H Infineon-IMBG65R060M2H-DataSheet-v02_01-EN.pdf?fileId=8ac78c8c92bcf0b0019387a31dca4258
IMBG65R060M2H
Виробник: Infineon Technologies
Description: IMBG65R060M2H
Packaging: Tape & Reel (TR)
Package / Case: TO-263-8, D2PAK (7 Leads + Tab), TO-263CA
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: SiC (Silicon Carbide Junction Transistor)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 34.9A (Tc)
Rds On (Max) @ Id, Vgs: 55mOhm @ 15.4A, 20V
Power Dissipation (Max): 148W (Tc)
Vgs(th) (Max) @ Id: 5.6V @ 3.1mA
Supplier Device Package: PG-TO263-7-12
Drive Voltage (Max Rds On, Min Rds On): 15V, 20V
Vgs (Max): +23V, -7V
Drain to Source Voltage (Vdss): 650 V
Gate Charge (Qg) (Max) @ Vgs: 18 nC @ 18 V
Input Capacitance (Ciss) (Max) @ Vds: 669 pF @ 400 V
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IMBG65R060M2H Infineon-IMBG65R060M2H-DataSheet-v02_01-EN.pdf?fileId=8ac78c8c92bcf0b0019387a31dca4258
IMBG65R060M2H
Виробник: Infineon Technologies
Description: IMBG65R060M2H
Packaging: Cut Tape (CT)
Package / Case: TO-263-8, D2PAK (7 Leads + Tab), TO-263CA
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: SiC (Silicon Carbide Junction Transistor)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 34.9A (Tc)
Rds On (Max) @ Id, Vgs: 55mOhm @ 15.4A, 20V
Power Dissipation (Max): 148W (Tc)
Vgs(th) (Max) @ Id: 5.6V @ 3.1mA
Supplier Device Package: PG-TO263-7-12
Drive Voltage (Max Rds On, Min Rds On): 15V, 20V
Vgs (Max): +23V, -7V
Drain to Source Voltage (Vdss): 650 V
Gate Charge (Qg) (Max) @ Vgs: 18 nC @ 18 V
Input Capacitance (Ciss) (Max) @ Vds: 669 pF @ 400 V
на замовлення 440 шт:
термін постачання 21-31 дні (днів)
Кількість Ціна
1+520.83 грн
10+385.91 грн
25+357.00 грн
100+305.21 грн
250+291.01 грн
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IMBG65R033M2H Infineon-IMBG65R033M2H-DataSheet-v02_00-EN.pdf?fileId=8ac78c8c92bcf0b001938810c42c42ce
IMBG65R033M2H
Виробник: Infineon Technologies
Description: IMBG65R033M2H
Packaging: Tape & Reel (TR)
Package / Case: TO-263-8, D2PAK (7 Leads + Tab), TO-263CA
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: SiC (Silicon Carbide Junction Transistor)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 58A (Tc)
Rds On (Max) @ Id, Vgs: 30mOhm @ 27.9A, 20V
Power Dissipation (Max): 227W (Tc)
Vgs(th) (Max) @ Id: 5.6V @ 5.7mA
Supplier Device Package: PG-TO263-7-12
Drive Voltage (Max Rds On, Min Rds On): 15V, 20V
Vgs (Max): +23V, -7V
Drain to Source Voltage (Vdss): 650 V
Gate Charge (Qg) (Max) @ Vgs: 34 nC @ 18 V
Input Capacitance (Ciss) (Max) @ Vds: 1214 pF @ 400 V
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IMBG65R033M2H Infineon-IMBG65R033M2H-DataSheet-v02_00-EN.pdf?fileId=8ac78c8c92bcf0b001938810c42c42ce
IMBG65R033M2H
Виробник: Infineon Technologies
Description: IMBG65R033M2H
Packaging: Cut Tape (CT)
Package / Case: TO-263-8, D2PAK (7 Leads + Tab), TO-263CA
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: SiC (Silicon Carbide Junction Transistor)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 58A (Tc)
Rds On (Max) @ Id, Vgs: 30mOhm @ 27.9A, 20V
Power Dissipation (Max): 227W (Tc)
Vgs(th) (Max) @ Id: 5.6V @ 5.7mA
Supplier Device Package: PG-TO263-7-12
Drive Voltage (Max Rds On, Min Rds On): 15V, 20V
Vgs (Max): +23V, -7V
Drain to Source Voltage (Vdss): 650 V
Gate Charge (Qg) (Max) @ Vgs: 34 nC @ 18 V
Input Capacitance (Ciss) (Max) @ Vds: 1214 pF @ 400 V
на замовлення 423 шт:
термін постачання 21-31 дні (днів)
Кількість Ціна
1+766.89 грн
10+575.86 грн
25+535.19 грн
100+460.31 грн
250+440.30 грн
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IMBG65R026M2H Infineon-IMBG65R026M2H-DataSheet-v02_00-EN.pdf?fileId=8ac78c8c92bcf0b0019387f54b2542b0
IMBG65R026M2H
Виробник: Infineon Technologies
Description: IMBG65R026M2H
Packaging: Tape & Reel (TR)
Package / Case: TO-263-8, D2PAK (7 Leads + Tab), TO-263CA
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: SiC (Silicon Carbide Junction Transistor)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 68A (Tc)
Rds On (Max) @ Id, Vgs: 24mOhm @ 34.5A, 20V
Power Dissipation (Max): 263W (Tc)
Vgs(th) (Max) @ Id: 5.6V @ 7mA
Supplier Device Package: PG-TO263-7-12
Drive Voltage (Max Rds On, Min Rds On): 15V, 20V
Vgs (Max): +23V, -7V
Drain to Source Voltage (Vdss): 650 V
Gate Charge (Qg) (Max) @ Vgs: 42 nC @ 18 V
Input Capacitance (Ciss) (Max) @ Vds: 1499 pF @ 400 V
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IMBG65R026M2H Infineon-IMBG65R026M2H-DataSheet-v02_00-EN.pdf?fileId=8ac78c8c92bcf0b0019387f54b2542b0
IMBG65R026M2H
Виробник: Infineon Technologies
Description: IMBG65R026M2H
Packaging: Cut Tape (CT)
Package / Case: TO-263-8, D2PAK (7 Leads + Tab), TO-263CA
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: SiC (Silicon Carbide Junction Transistor)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 68A (Tc)
Rds On (Max) @ Id, Vgs: 24mOhm @ 34.5A, 20V
Power Dissipation (Max): 263W (Tc)
Vgs(th) (Max) @ Id: 5.6V @ 7mA
Supplier Device Package: PG-TO263-7-12
Drive Voltage (Max Rds On, Min Rds On): 15V, 20V
Vgs (Max): +23V, -7V
Drain to Source Voltage (Vdss): 650 V
Gate Charge (Qg) (Max) @ Vgs: 42 nC @ 18 V
Input Capacitance (Ciss) (Max) @ Vds: 1499 pF @ 400 V
на замовлення 490 шт:
термін постачання 21-31 дні (днів)
Кількість Ціна
1+924.37 грн
10+698.13 грн
25+650.25 грн
100+560.80 грн
250+537.24 грн
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IMBG65R010M2H Infineon-IMBG65R010M2H-DataSheet-v02_00-EN.pdf?fileId=8ac78c8c92bcf0b0019387a32c38425b
IMBG65R010M2H
Виробник: Infineon Technologies
Description: IMBG65R010M2H
Packaging: Tape & Reel (TR)
Package / Case: TO-263-8, D2PAK (7 Leads + Tab), TO-263CA
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: SiC (Silicon Carbide Junction Transistor)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 158A (Tc)
Rds On (Max) @ Id, Vgs: 9.1mOhm @ 92.1A, 20V
Power Dissipation (Max): 535W (Tc)
Vgs(th) (Max) @ Id: 5.6V @ 18.7mA
Supplier Device Package: PG-TO263-7-12
Drive Voltage (Max Rds On, Min Rds On): 15V, 20V
Vgs (Max): +23V, -7V
Drain to Source Voltage (Vdss): 650 V
Gate Charge (Qg) (Max) @ Vgs: 112 nC @ 18 V
Input Capacitance (Ciss) (Max) @ Vds: 4001 pF @ 400 V
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IMBG65R010M2H Infineon-IMBG65R010M2H-DataSheet-v02_00-EN.pdf?fileId=8ac78c8c92bcf0b0019387a32c38425b
IMBG65R010M2H
Виробник: Infineon Technologies
Description: IMBG65R010M2H
Packaging: Cut Tape (CT)
Package / Case: TO-263-8, D2PAK (7 Leads + Tab), TO-263CA
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: SiC (Silicon Carbide Junction Transistor)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 158A (Tc)
Rds On (Max) @ Id, Vgs: 9.1mOhm @ 92.1A, 20V
Power Dissipation (Max): 535W (Tc)
Vgs(th) (Max) @ Id: 5.6V @ 18.7mA
Supplier Device Package: PG-TO263-7-12
Drive Voltage (Max Rds On, Min Rds On): 15V, 20V
Vgs (Max): +23V, -7V
Drain to Source Voltage (Vdss): 650 V
Gate Charge (Qg) (Max) @ Vgs: 112 nC @ 18 V
Input Capacitance (Ciss) (Max) @ Vds: 4001 pF @ 400 V
на замовлення 482 шт:
термін постачання 21-31 дні (днів)
Кількість Ціна
1+1731.45 грн
10+1335.12 грн
25+1252.09 грн
100+1089.42 грн
250+1048.59 грн
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FS200R12N3T4RB81BPSA1
FS200R12N3T4RB81BPSA1
Виробник: Infineon Technologies
Description: LOW POWER ECONO AG-ECONO3-4
Packaging: Tray
на замовлення 10 шт:
термін постачання 21-31 дні (днів)
Кількість Ціна
1+11489.41 грн
10+9827.80 грн
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IRS2607DSTRPBF fundamentals-of-power-semiconductors
IRS2607DSTRPBF
Виробник: Infineon Technologies
Description: IC GATE DRVR HALF-BRIDGE 8SOIC
Packaging: Tape & Reel (TR)
Package / Case: 8-SOIC (0.154", 3.90mm Width)
Mounting Type: Surface Mount
Operating Temperature: -40°C ~ 150°C (TJ)
Voltage - Supply: 10V ~ 20V
Input Type: Non-Inverting
High Side Voltage - Max (Bootstrap): 600 V
Supplier Device Package: 8-SOIC
Rise / Fall Time (Typ): 150ns, 50ns
Channel Type: Independent
Driven Configuration: Half-Bridge
Number of Drivers: 2
Gate Type: IGBT, MOSFET (N-Channel)
Logic Voltage - VIL, VIH: 0.8V, 2.2V
Current - Peak Output (Source, Sink): 200mA, 350mA
DigiKey Programmable: Not Verified
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IRS2607DSTRPBF fundamentals-of-power-semiconductors
IRS2607DSTRPBF
Виробник: Infineon Technologies
Description: IC GATE DRVR HALF-BRIDGE 8SOIC
Packaging: Cut Tape (CT)
Package / Case: 8-SOIC (0.154", 3.90mm Width)
Mounting Type: Surface Mount
Operating Temperature: -40°C ~ 150°C (TJ)
Voltage - Supply: 10V ~ 20V
Input Type: Non-Inverting
High Side Voltage - Max (Bootstrap): 600 V
Supplier Device Package: 8-SOIC
Rise / Fall Time (Typ): 150ns, 50ns
Channel Type: Independent
Driven Configuration: Half-Bridge
Number of Drivers: 2
Gate Type: IGBT, MOSFET (N-Channel)
Logic Voltage - VIL, VIH: 0.8V, 2.2V
Current - Peak Output (Source, Sink): 200mA, 350mA
DigiKey Programmable: Not Verified
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F3L300R12MT4PB23BPSA1 Infineon-F3L300R12MT4P_B23-DS-v03_00-EN.pdf?fileId=5546d4625debb399015e18a7da1f3327
F3L300R12MT4PB23BPSA1
Виробник: Infineon Technologies
Description: IGBT MOD 1200V 300A 20MW
Packaging: Bulk
Package / Case: Module
Mounting Type: Chassis Mount
Input: Standard
Configuration: Half Bridge
Operating Temperature: -40°C ~ 150°C (TJ)
Vce(on) (Max) @ Vge, Ic: 2.1V @ 15V, 300A
NTC Thermistor: Yes
Supplier Device Package: Module
IGBT Type: Trench Field Stop
Current - Collector (Ic) (Max): 300 A
Voltage - Collector Emitter Breakdown (Max): 1200 V
Current - Collector Cutoff (Max): 1 mA
Input Capacitance (Cies) @ Vce: 19 nF @ 25 V
на замовлення 15 шт:
термін постачання 21-31 дні (днів)
Кількість Ціна
2+18635.43 грн
Мінімальне замовлення: 2
В кошику  од. на суму  грн.
F3L300R12MT4PB23BPSA1 Infineon-F3L300R12MT4P_B23-DS-v03_00-EN.pdf?fileId=5546d4625debb399015e18a7da1f3327
F3L300R12MT4PB23BPSA1
Виробник: Infineon Technologies
Description: IGBT MOD 1200V 300A 20MW
Packaging: Tray
Package / Case: Module
Mounting Type: Chassis Mount
Input: Standard
Configuration: Half Bridge
Operating Temperature: -40°C ~ 150°C (TJ)
Vce(on) (Max) @ Vge, Ic: 2.1V @ 15V, 300A
NTC Thermistor: Yes
Supplier Device Package: Module
IGBT Type: Trench Field Stop
Current - Collector (Ic) (Max): 300 A
Voltage - Collector Emitter Breakdown (Max): 1200 V
Current - Collector Cutoff (Max): 1 mA
Input Capacitance (Cies) @ Vce: 19 nF @ 25 V
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F3L300R12MT4PB22BPSA1 Infineon-F3L300R12MT4P_B22-DS-v03_00-EN.pdf?fileId=5546d4625debb399015e18a84176332d
F3L300R12MT4PB22BPSA1
Виробник: Infineon Technologies
Description: IGBT MODULE MED POWER ECONO
Packaging: Bulk
на замовлення 3 шт:
термін постачання 21-31 дні (днів)
Кількість Ціна
2+18635.43 грн
Мінімальне замовлення: 2
В кошику  од. на суму  грн.
F3L300R12MT4PB22BPSA1 Infineon-F3L300R12MT4P_B22-DS-v03_00-EN.pdf?fileId=5546d4625debb399015e18a84176332d
F3L300R12MT4PB22BPSA1
Виробник: Infineon Technologies
Description: IGBT MODULE MED POWER ECONO
Packaging: Tray
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IR21844PBF description ir2184.pdf?fileId=5546d462533600a4015355c955e616d4
IR21844PBF
Виробник: Infineon Technologies
Description: IC GATE DRVR HALF-BRIDGE 14DIP
Packaging: Bulk
Package / Case: 14-DIP (0.300", 7.62mm)
Mounting Type: Through Hole
Operating Temperature: -40°C ~ 150°C (TJ)
Voltage - Supply: 10V ~ 20V
Input Type: Non-Inverting
High Side Voltage - Max (Bootstrap): 600 V
Supplier Device Package: 14-DIP
Rise / Fall Time (Typ): 40ns, 20ns
Channel Type: Synchronous
Driven Configuration: Half-Bridge
Number of Drivers: 2
Gate Type: IGBT, MOSFET (N-Channel)
Logic Voltage - VIL, VIH: 0.8V, 2.7V
Current - Peak Output (Source, Sink): 1.9A, 2.3A
DigiKey Programmable: Not Verified
на замовлення 907 шт:
термін постачання 21-31 дні (днів)
Кількість Ціна
90+235.70 грн
Мінімальне замовлення: 90
В кошику  од. на суму  грн.
IR21844PBF description ir2184.pdf?fileId=5546d462533600a4015355c955e616d4
IR21844PBF
Виробник: Infineon Technologies
Description: IC GATE DRVR HALF-BRIDGE 14DIP
Packaging: Tube
Package / Case: 14-DIP (0.300", 7.62mm)
Mounting Type: Through Hole
Operating Temperature: -40°C ~ 150°C (TJ)
Voltage - Supply: 10V ~ 20V
Input Type: Non-Inverting
High Side Voltage - Max (Bootstrap): 600 V
Supplier Device Package: 14-DIP
Rise / Fall Time (Typ): 40ns, 20ns
Channel Type: Synchronous
Driven Configuration: Half-Bridge
Number of Drivers: 2
Gate Type: IGBT, MOSFET (N-Channel)
Logic Voltage - VIL, VIH: 0.8V, 2.7V
Current - Peak Output (Source, Sink): 1.9A, 2.3A
DigiKey Programmable: Not Verified
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IRFS4127PBF description irfs4127pbf.pdf?fileId=5546d462533600a401535636ee7b2192
IRFS4127PBF
Виробник: Infineon Technologies
Description: MOSFET N-CH 200V 72A D2PAK
Packaging: Tube
Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 72A (Tc)
Rds On (Max) @ Id, Vgs: 22mOhm @ 44A, 10V
Power Dissipation (Max): 375W (Tc)
Vgs(th) (Max) @ Id: 5V @ 250µA
Supplier Device Package: D2PAK
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 200 V
Gate Charge (Qg) (Max) @ Vgs: 150 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 5380 pF @ 50 V
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