Продукція > INFINEON TECHNOLOGIES > Всі товари виробника INFINEON TECHNOLOGIES (123035) > Сторінка 761 з 2051
| Фото | Назва | Виробник | Інформація | Доступність | Ціна без ПДВ | ||||||||||
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IQFH39N04NM6ATMA1 | Infineon Technologies |
Description: TRENCH <= 40VInput Capacitance (Ciss) (Max) @ Vds: 16400 pF @ 20 V Gate Charge (Qg) (Max) @ Vgs: 273 nC @ 10 V Drain to Source Voltage (Vdss): 40 V Vgs (Max): ±20V Drive Voltage (Max Rds On, Min Rds On): 6V, 10V Supplier Device Package: PG-TSON-12-1 Vgs(th) (Max) @ Id: 2.8V @ 1.05mA Power Dissipation (Max): 3W (Ta), 273W (Tc) Rds On (Max) @ Id, Vgs: 0.39mOhm @ 100A, 10V Current - Continuous Drain (Id) @ 25°C: 63A (Ta), 600A (Tc) FET Type: N-Channel Technology: MOSFET (Metal Oxide) Operating Temperature: -55°C ~ 175°C (TJ) Mounting Type: Surface Mount Package / Case: 12-PowerTDFN Packaging: Cut Tape (CT) |
на замовлення 2996 шт: термін постачання 21-31 дні (днів) |
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SAF-XC866-4FRA BC | Infineon Technologies |
Description: IC MCU 8BIT 16KB FLASH 38TSSOPDigiKey Programmable: Not Verified Number of I/O: 19 Supplier Device Package: PG-TSSOP-38 Peripherals: Brown-out Detect/Reset, POR, PWM, WDT Connectivity: SSI, UART/USART Voltage - Supply (Vcc/Vdd): 4.5V ~ 5.5V Core Size: 8-Bit Data Converters: A/D 8x10b Core Processor: XC800 Program Memory Type: FLASH Oscillator Type: Internal Operating Temperature: -40°C ~ 85°C (TA) RAM Size: 768 x 8 Program Memory Size: 16KB (16K x 8) Speed: 86MHz Mounting Type: Surface Mount Package / Case: 38-TFSOP (0.173", 4.40mm Width) Packaging: Tape & Reel (TR) |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||||
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SPU02N60S5BKMA1 | Infineon Technologies |
Description: MOSFET N-CH 600V 1.8A TO251-3Packaging: Bulk Package / Case: TO-251-3 Short Leads, IPak, TO-251AA Mounting Type: Through Hole Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 1.8A (Tc) Rds On (Max) @ Id, Vgs: 3Ohm @ 1.1A, 10V Power Dissipation (Max): 25W (Tc) Vgs(th) (Max) @ Id: 5.5V @ 80µA Supplier Device Package: PG-TO251-3-21 Drive Voltage (Max Rds On, Min Rds On): 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 600 V Gate Charge (Qg) (Max) @ Vgs: 9.5 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 240 pF @ 25 V |
на замовлення 23717 шт: термін постачання 21-31 дні (днів) |
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IMT65R033M2HXUMA1 | Infineon Technologies |
Description: SILICON CARBIDE MOSFETPackaging: Tape & Reel (TR) Package / Case: 8-PowerSFN Mounting Type: Surface Mount Operating Temperature: -55°C ~ 175°C (TJ) Technology: SiCFET (Silicon Carbide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 68A (Tc) Rds On (Max) @ Id, Vgs: 30mOhm @ 27.9A, 20V Power Dissipation (Max): 312W (Tc) Vgs(th) (Max) @ Id: 5.6V @ 5.7mA Supplier Device Package: PG-HSOF-8-2 Drive Voltage (Max Rds On, Min Rds On): 15V, 20V Vgs (Max): +23V, -7V Drain to Source Voltage (Vdss): 650 V Gate Charge (Qg) (Max) @ Vgs: 34 nC @ 18 V Input Capacitance (Ciss) (Max) @ Vds: 1215 pF @ 400 V |
товару немає в наявності |
Мінімальне замовлення: 2000 шт В кошику од. на суму грн. | ||||||||||
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IMT65R033M2HXUMA1 | Infineon Technologies |
Description: SILICON CARBIDE MOSFETPackaging: Cut Tape (CT) Package / Case: 8-PowerSFN Mounting Type: Surface Mount Operating Temperature: -55°C ~ 175°C (TJ) Technology: SiCFET (Silicon Carbide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 68A (Tc) Rds On (Max) @ Id, Vgs: 30mOhm @ 27.9A, 20V Power Dissipation (Max): 312W (Tc) Vgs(th) (Max) @ Id: 5.6V @ 5.7mA Supplier Device Package: PG-HSOF-8-2 Drive Voltage (Max Rds On, Min Rds On): 15V, 20V Vgs (Max): +23V, -7V Drain to Source Voltage (Vdss): 650 V Gate Charge (Qg) (Max) @ Vgs: 34 nC @ 18 V Input Capacitance (Ciss) (Max) @ Vds: 1215 pF @ 400 V |
на замовлення 1103 шт: термін постачання 21-31 дні (днів) |
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CY8C20636A-24LTXI | Infineon Technologies |
Description: MCU 8K FLASH 1K SRAM 48QFNPackaging: Tray Package / Case: 48-VFQFN Exposed Pad Mounting Type: Surface Mount Interface: I2C, SPI RAM Size: 1K x 8 Operating Temperature: -40°C ~ 85°C Voltage - Supply: 1.71V ~ 5.5V Controller Series: CY8C20xx6A Program Memory Type: FLASH (8kB) Applications: Capacitive Sensing Core Processor: M8C Supplier Device Package: 48-QFN (7x7) Number of I/O: 36 DigiKey Programmable: Not Verified |
товару немає в наявності |
Мінімальне замовлення: 520 шт В кошику од. на суму грн. | ||||||||||
| SIGC28T60SEX1SA2 | Infineon Technologies |
Description: IGBT TRENCH FS 600V 50A DIE Packaging: Bulk Package / Case: Die Mounting Type: Surface Mount Operating Temperature: -40°C ~ 175°C (TJ) Input Type: Standard Vce(on) (Max) @ Vge, Ic: 2.05V @ 15V, 50A Supplier Device Package: Die IGBT Type: Trench Field Stop Current - Collector (Ic) (Max): 50 A Voltage - Collector Emitter Breakdown (Max): 600 V Current - Collector Pulsed (Icm): 150 A |
товару немає в наявності |
В кошику од. на суму грн. | |||||||||||
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CYPD8225-97BZXIT | Infineon Technologies |
Description: IC USB MCU 256KB FLASH 97-VFBGAPackaging: Cut Tape (CT) Package / Case: 97-VFBGA Mounting Type: Surface Mount Interface: I2C, SPI, UART, USB RAM Size: 32K x 8 Operating Temperature: -40°C ~ 85°C (TA) Voltage - Supply: 2.7V ~ 5.5V Controller Series: EZ-PD™ Program Memory Type: FLASH (256kB), ROM (96kB) Applications: USB Type C Core Processor: ARM® Cortex®-M0+ Supplier Device Package: 97-BGA (6x6) Number of I/O: 50 |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||||
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SPD02N60S5BTMA1 | Infineon Technologies |
Description: MOSFET N-CH 600V 1.8A TO252-3Packaging: Bulk Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63 Mounting Type: Surface Mount Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 1.8A (Tc) Rds On (Max) @ Id, Vgs: 3Ohm @ 1.1A, 10V Power Dissipation (Max): 25W (Tc) Vgs(th) (Max) @ Id: 5.5V @ 80µA Supplier Device Package: PG-TO252-3-11 Drive Voltage (Max Rds On, Min Rds On): 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 600 V Gate Charge (Qg) (Max) @ Vgs: 9.5 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 240 pF @ 25 V |
на замовлення 13370 шт: термін постачання 21-31 дні (днів) |
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| T7300N85X203A11XPSA1 | Infineon Technologies |
Description: SCR MODULE HP T20235K-1 Packaging: Tray |
товару немає в наявності |
В кошику од. на суму грн. | |||||||||||
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IPW60R099CM8XKSA1 | Infineon Technologies |
Description: IPW60R099CM8XKSA1Packaging: Tape & Reel (TR) Package / Case: TO-247-3 Mounting Type: Through Hole Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 29A (Tc) Rds On (Max) @ Id, Vgs: 99mOhm @ 10.1A, 10V Power Dissipation (Max): 176W (Tc) Vgs(th) (Max) @ Id: 4.7V @ 260µA Supplier Device Package: PG-TO247-3-U06 Drive Voltage (Max Rds On, Min Rds On): 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 600 V Gate Charge (Qg) (Max) @ Vgs: 31 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 1330 pF @ 400 V |
на замовлення 334 шт: термін постачання 21-31 дні (днів) |
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IPW60R055CM8XKSA1 | Infineon Technologies |
Description: IPW60R055CM8XKSA1Packaging: Tube Package / Case: TO-247-3 Mounting Type: Through Hole Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 44A (Tc) Rds On (Max) @ Id, Vgs: 55mOhm @ 18.2A, 10V Power Dissipation (Max): 227W (Tc) Vgs(th) (Max) @ Id: 4.7V @ 440µA Supplier Device Package: PG-TO247-3-U06 Drive Voltage (Max Rds On, Min Rds On): 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 600 V Gate Charge (Qg) (Max) @ Vgs: 51 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 2245 pF @ 400 V |
на замовлення 135 шт: термін постачання 21-31 дні (днів) |
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IPW60R024CM8XKSA1 | Infineon Technologies |
Description: IPW60R024CM8XKSA1Packaging: Tape & Reel (TR) Package / Case: TO-247-3 Mounting Type: Through Hole Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 91A (Tc) Rds On (Max) @ Id, Vgs: 24mOhm @ 41.7A, 10V Power Dissipation (Max): 431W (Tc) Vgs(th) (Max) @ Id: 4.7V @ 1.06mA Supplier Device Package: PG-TO247-3-U06 Drive Voltage (Max Rds On, Min Rds On): 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 600 V Gate Charge (Qg) (Max) @ Vgs: 122 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 5382 pF @ 400 V |
на замовлення 359 шт: термін постачання 21-31 дні (днів) |
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IPW60R120CM8XKSA1 | Infineon Technologies |
Description: IPW60R120CM8XKSA1Packaging: Tube Package / Case: TO-247-3 Mounting Type: Through Hole Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 23A (Tc) Rds On (Max) @ Id, Vgs: 120mOhm @ 8.3A, 10V Power Dissipation (Max): 131W (Tc) Vgs(th) (Max) @ Id: 4.7V @ 200µA Supplier Device Package: PG-TO247-3-U06 Drive Voltage (Max Rds On, Min Rds On): 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 600 V Gate Charge (Qg) (Max) @ Vgs: 24 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 1045 pF @ 400 V |
на замовлення 184 шт: термін постачання 21-31 дні (днів) |
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IPW60R070CM8XKSA1 | Infineon Technologies |
Description: IPW60R070CM8XKSA1Packaging: Tube Package / Case: TO-247-3 Mounting Type: Through Hole Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 37A (Tc) Rds On (Max) @ Id, Vgs: 70mOhm @ 14.3A, 10V Power Dissipation (Max): 201W (Tc) Vgs(th) (Max) @ Id: 4.7V @ 360µA Supplier Device Package: PG-TO247-3-U06 Drive Voltage (Max Rds On, Min Rds On): 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 600 V Gate Charge (Qg) (Max) @ Vgs: 43 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 1878 pF @ 400 V |
на замовлення 32 шт: термін постачання 21-31 дні (днів) |
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IPP040N08NF2SAKMA1 | Infineon Technologies |
Description: TRENCH 40<-<100VPackaging: Bulk Package / Case: TO-220-3 Mounting Type: Through Hole Operating Temperature: -55°C ~ 175°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 22A (Ta), 115A (Tc) Rds On (Max) @ Id, Vgs: 4mOhm @ 80A, 10V Power Dissipation (Max): 3.8W (Ta), 150W (Tc) Vgs(th) (Max) @ Id: 3.8V @ 85µA Supplier Device Package: PG-TO220-3 Drive Voltage (Max Rds On, Min Rds On): 6V, 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 80 V Gate Charge (Qg) (Max) @ Vgs: 81 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 3800 pF @ 40 V |
на замовлення 250000 шт: термін постачання 21-31 дні (днів) |
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CYT2B75CADQ0AZEGST | Infineon Technologies |
Description: IC MCU 32BT 1.0625MB FLSH 100QFPRAM Size: 128K x 8 Program Memory Size: 1.0625MB (1.0625M x 8) Speed: 100MHz, 160MHz Mounting Type: Surface Mount Package / Case: 100-LQFP Packaging: Cut Tape (CT) DigiKey Programmable: Not Verified Number of I/O: 78 Supplier Device Package: 100-LQFP (14x14) Peripherals: Brown-out Detect/Reset, Crypto - AES, DMA, LVD, POR, PWM, SHA, TRNG, WDT Connectivity: CANbus, FIFO, I2C, IrDA, LINbus, SPI, UART/USART Voltage - Supply (Vcc/Vdd): 2.7V ~ 5.5V Core Size: 32-Bit Dual-Core Data Converters: A/D 57x12b SAR Core Processor: ARM® Cortex®-M0+, ARM® Cortex®-M4F EEPROM Size: 96K x 8 Program Memory Type: FLASH Oscillator Type: External, Internal Operating Temperature: -40°C ~ 125°C (TA) |
на замовлення 500 шт: термін постачання 21-31 дні (днів) |
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S26HS512TGABHI003 | Infineon Technologies |
Description: IC FLASH 512MBIT HYPERBUS 24FBGAPackaging: Tape & Reel (TR) Package / Case: 24-VBGA Mounting Type: Surface Mount Memory Size: 512Mbit Memory Type: Non-Volatile Operating Temperature: -40°C ~ 85°C (TA) Voltage - Supply: 1.7V ~ 2V Technology: FLASH - NOR (SLC) Clock Frequency: 200 MHz Memory Format: FLASH Supplier Device Package: 24-FBGA (8x8) Write Cycle Time - Word, Page: 1.7ms Memory Interface: HyperBus Access Time: 5.45 ns Memory Organization: 64M x 8 DigiKey Programmable: Not Verified |
товару немає в наявності |
Мінімальне замовлення: 2500 шт В кошику од. на суму грн. | ||||||||||
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S26HL512TFPBHV003 | Infineon Technologies |
Description: IC FLASH 512MBIT HYPERBUS 24FBGAPackaging: Tape & Reel (TR) Package / Case: 24-VBGA Mounting Type: Surface Mount Memory Size: 512Mbit Memory Type: Non-Volatile Operating Temperature: -40°C ~ 105°C (TA) Voltage - Supply: 2.7V ~ 3.6V Technology: FLASH - NOR (SLC) Clock Frequency: 166 MHz Memory Format: FLASH Supplier Device Package: 24-FBGA (6x8) Write Cycle Time - Word, Page: 1.7ms Memory Interface: HyperBus Access Time: 6.5 ns Memory Organization: 64M x 8 DigiKey Programmable: Not Verified |
товару немає в наявності |
Мінімальне замовлення: 2500 шт В кошику од. на суму грн. | ||||||||||
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S26HL512TFPBHV013 | Infineon Technologies |
Description: IC FLASH 512MBIT HYPERBUS 24FBGAPackaging: Tape & Reel (TR) Package / Case: 24-VBGA Mounting Type: Surface Mount Memory Size: 512Mbit Memory Type: Non-Volatile Operating Temperature: -40°C ~ 105°C (TA) Voltage - Supply: 2.7V ~ 3.6V Technology: FLASH - NOR (SLC) Clock Frequency: 166 MHz Memory Format: FLASH Supplier Device Package: 24-FBGA (6x8) Write Cycle Time - Word, Page: 1.7ms Memory Interface: HyperBus Access Time: 6.5 ns Memory Organization: 64M x 8 DigiKey Programmable: Not Verified |
товару немає в наявності |
Мінімальне замовлення: 2500 шт В кошику од. на суму грн. | ||||||||||
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S26HS512TGABHV013 | Infineon Technologies |
Description: IC FLASH 512MBIT HYPERBUS 24FBGAPackaging: Tape & Reel (TR) Package / Case: 24-VBGA Mounting Type: Surface Mount Memory Size: 512Mbit Memory Type: Non-Volatile Operating Temperature: -40°C ~ 105°C (TA) Voltage - Supply: 1.7V ~ 2V Technology: FLASH - NOR (SLC) Clock Frequency: 200 MHz Memory Format: FLASH Supplier Device Package: 24-FBGA (6x8) Write Cycle Time - Word, Page: 1.7ms Memory Interface: HyperBus Access Time: 5.45 ns Memory Organization: 64M x 8 DigiKey Programmable: Not Verified |
товару немає в наявності |
Мінімальне замовлення: 2500 шт В кошику од. на суму грн. | ||||||||||
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S28HL512TFPBHV010 | Infineon Technologies |
Description: IC FLASH 512MBIT SPI/OCTL 24FBGAPackaging: Tray Package / Case: 24-VBGA Mounting Type: Surface Mount Memory Size: 512Mbit Memory Type: Non-Volatile Operating Temperature: -40°C ~ 105°C (TA) Voltage - Supply: 2.7V ~ 3.6V Technology: FLASH - NOR (SLC) Clock Frequency: 166 MHz Memory Format: FLASH Supplier Device Package: 24-FBGA (6x8) Write Cycle Time - Word, Page: 1.7ms Memory Interface: SPI - Octal I/O Access Time: 6.5 ns Memory Organization: 64M x 8 DigiKey Programmable: Not Verified |
товару немає в наявності |
Мінімальне замовлення: 338 шт В кошику од. на суму грн. | ||||||||||
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S28HL512TFPBHB013 | Infineon Technologies |
Description: IC FLASH 512MBIT SPI/OCTL 24FBGAPackaging: Tape & Reel (TR) Package / Case: 24-VBGA Mounting Type: Surface Mount Memory Size: 512Mbit Memory Type: Non-Volatile Operating Temperature: -40°C ~ 105°C (TA) Voltage - Supply: 2.7V ~ 3.6V Technology: FLASH - NOR (SLC) Clock Frequency: 166 MHz Memory Format: FLASH Supplier Device Package: 24-FBGA (6x8) Write Cycle Time - Word, Page: 1.7ms Memory Interface: SPI - Octal I/O Access Time: 6.5 ns Memory Organization: 64M x 8 DigiKey Programmable: Not Verified |
товару немає в наявності |
Мінімальне замовлення: 2500 шт В кошику од. на суму грн. | ||||||||||
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S26HL512TFPBHB003 | Infineon Technologies |
Description: IC FLASH 512MBIT HYPERBUS 24FBGAPackaging: Tape & Reel (TR) Package / Case: 24-VBGA Mounting Type: Surface Mount Memory Size: 512Mbit Memory Type: Non-Volatile Operating Temperature: -40°C ~ 105°C (TA) Voltage - Supply: 2.7V ~ 3.6V Technology: FLASH - NOR (SLC) Clock Frequency: 166 MHz Memory Format: FLASH Supplier Device Package: 24-FBGA (6x8) Write Cycle Time - Word, Page: 1.7ms Memory Interface: HyperBus Access Time: 6.5 ns Memory Organization: 64M x 8 DigiKey Programmable: Not Verified |
товару немає в наявності |
Мінімальне замовлення: 2500 шт В кошику од. на суму грн. | ||||||||||
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S26HL512TFPBHB013 | Infineon Technologies |
Description: IC FLASH 512MBIT HYPERBUS 24FBGAPackaging: Tape & Reel (TR) Package / Case: 24-VBGA Mounting Type: Surface Mount Memory Size: 512Mbit Memory Type: Non-Volatile Operating Temperature: -40°C ~ 105°C (TA) Voltage - Supply: 2.7V ~ 3.6V Technology: FLASH - NOR (SLC) Clock Frequency: 166 MHz Memory Format: FLASH Supplier Device Package: 24-FBGA (6x8) Write Cycle Time - Word, Page: 1.7ms Memory Interface: HyperBus Access Time: 6.5 ns Memory Organization: 64M x 8 DigiKey Programmable: Not Verified |
товару немає в наявності |
Мінімальне замовлення: 2500 шт В кошику од. на суму грн. | ||||||||||
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S26HS512TGABHV010 | Infineon Technologies |
Description: IC FLASH 512MBIT HYPERBUS 24FBGAPackaging: Tray Package / Case: 24-VBGA Mounting Type: Surface Mount Memory Size: 512Mbit Memory Type: Non-Volatile Operating Temperature: -40°C ~ 105°C (TA) Voltage - Supply: 1.7V ~ 2V Technology: FLASH - NOR (SLC) Clock Frequency: 200 MHz Memory Format: FLASH Supplier Device Package: 24-FBGA (6x8) Write Cycle Time - Word, Page: 1.7ms Memory Interface: HyperBus Access Time: 5.45 ns Memory Organization: 64M x 8 DigiKey Programmable: Not Verified |
товару немає в наявності |
Мінімальне замовлення: 338 шт В кошику од. на суму грн. | ||||||||||
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S26HL512TFPBHB000 | Infineon Technologies |
Description: IC FLASH 512MBIT HYPERBUS 24FBGAPackaging: Tray Package / Case: 24-VBGA Mounting Type: Surface Mount Memory Size: 512Mbit Memory Type: Non-Volatile Operating Temperature: -40°C ~ 105°C (TA) Voltage - Supply: 2.7V ~ 3.6V Technology: FLASH - NOR (SLC) Clock Frequency: 166 MHz Memory Format: FLASH Supplier Device Package: 24-FBGA (6x8) Write Cycle Time - Word, Page: 1.7ms Memory Interface: HyperBus Access Time: 6.5 ns Memory Organization: 64M x 8 DigiKey Programmable: Not Verified |
товару немає в наявності |
Мінімальне замовлення: 676 шт В кошику од. на суму грн. | ||||||||||
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S26HL512TFPBHM003 | Infineon Technologies |
Description: IC FLASH 512MBIT HYPERBUS 24FBGAPackaging: Tape & Reel (TR) Package / Case: 24-VBGA Mounting Type: Surface Mount Memory Size: 512Mbit Memory Type: Non-Volatile Operating Temperature: -40°C ~ 125°C (TA) Voltage - Supply: 2.7V ~ 3.6V Technology: FLASH - NOR (SLC) Clock Frequency: 166 MHz Memory Format: FLASH Supplier Device Package: 24-FBGA (6x8) Write Cycle Time - Word, Page: 1.7ms Memory Interface: HyperBus Access Time: 6.5 ns Memory Organization: 64M x 8 DigiKey Programmable: Not Verified |
товару немає в наявності |
Мінімальне замовлення: 2500 шт В кошику од. на суму грн. | ||||||||||
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S26HL512TFPBHM013 | Infineon Technologies |
Description: IC FLASH 512MBIT HYPERBUS 24FBGAPackaging: Tape & Reel (TR) Package / Case: 24-VBGA Mounting Type: Surface Mount Memory Size: 512Mbit Memory Type: Non-Volatile Operating Temperature: -40°C ~ 125°C (TA) Voltage - Supply: 2.7V ~ 3.6V Technology: FLASH - NOR (SLC) Clock Frequency: 166 MHz Memory Format: FLASH Supplier Device Package: 24-FBGA (6x8) Write Cycle Time - Word, Page: 1.7ms Memory Interface: HyperBus Access Time: 6.5 ns Memory Organization: 64M x 8 DigiKey Programmable: Not Verified |
товару немає в наявності |
Мінімальне замовлення: 2500 шт В кошику од. на суму грн. | ||||||||||
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S28HL512TFPBHM013 | Infineon Technologies |
Description: IC FLASH 512MBIT SPI/OCTL 24FBGAPackaging: Tape & Reel (TR) Package / Case: 24-VBGA Mounting Type: Surface Mount Memory Size: 512Mbit Memory Type: Non-Volatile Operating Temperature: -40°C ~ 125°C (TA) Voltage - Supply: 2.7V ~ 3.6V Technology: FLASH - NOR (SLC) Clock Frequency: 166 MHz Memory Format: FLASH Supplier Device Package: 24-FBGA (6x8) Write Cycle Time - Word, Page: 1.7ms Memory Interface: SPI - Octal I/O Access Time: 6.5 ns Memory Organization: 64M x 8 DigiKey Programmable: Not Verified |
товару немає в наявності |
Мінімальне замовлення: 2500 шт В кошику од. на суму грн. | ||||||||||
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S28HL512TFPBHB010 | Infineon Technologies |
Description: IC FLASH 512MBIT SPI/OCTL 24FBGAPackaging: Tray Package / Case: 24-VBGA Mounting Type: Surface Mount Memory Size: 512Mbit Memory Type: Non-Volatile Operating Temperature: -40°C ~ 105°C (TA) Voltage - Supply: 2.7V ~ 3.6V Technology: FLASH - NOR (SLC) Clock Frequency: 166 MHz Memory Format: FLASH Supplier Device Package: 24-FBGA (6x8) Write Cycle Time - Word, Page: 1.7ms Memory Interface: SPI - Octal I/O Access Time: 6.5 ns Memory Organization: 64M x 8 DigiKey Programmable: Not Verified |
товару немає в наявності |
Мінімальне замовлення: 338 шт В кошику од. на суму грн. | ||||||||||
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S26HL512TFPBHB010 | Infineon Technologies |
Description: IC FLASH 512MBIT HYPERBUS 24FBGAPackaging: Tray Package / Case: 24-VBGA Mounting Type: Surface Mount Memory Size: 512Mbit Memory Type: Non-Volatile Operating Temperature: -40°C ~ 105°C (TA) Voltage - Supply: 2.7V ~ 3.6V Technology: FLASH - NOR (SLC) Clock Frequency: 166 MHz Memory Format: FLASH Supplier Device Package: 24-FBGA (6x8) Write Cycle Time - Word, Page: 1.7ms Memory Interface: HyperBus Access Time: 6.5 ns Memory Organization: 64M x 8 DigiKey Programmable: Not Verified |
товару немає в наявності |
Мінімальне замовлення: 338 шт В кошику од. на суму грн. | ||||||||||
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S28HL512TFPBHM010 | Infineon Technologies |
Description: IC FLASH 512MBIT SPI/OCTL 24FBGAPackaging: Tray Package / Case: 24-VBGA Mounting Type: Surface Mount Memory Size: 512Mbit Memory Type: Non-Volatile Operating Temperature: -40°C ~ 125°C (TA) Voltage - Supply: 2.7V ~ 3.6V Technology: FLASH - NOR (SLC) Clock Frequency: 166 MHz Memory Format: FLASH Supplier Device Package: 24-FBGA (6x8) Write Cycle Time - Word, Page: 1.7ms Memory Interface: SPI - Octal I/O Access Time: 6.5 ns Memory Organization: 64M x 8 DigiKey Programmable: Not Verified |
товару немає в наявності |
Мінімальне замовлення: 338 шт В кошику од. на суму грн. | ||||||||||
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S26HL512TFPBHM000 | Infineon Technologies |
Description: IC FLASH 512MBIT HYPERBUS 24FBGAPackaging: Tray Package / Case: 24-VBGA Mounting Type: Surface Mount Memory Size: 512Mbit Memory Type: Non-Volatile Operating Temperature: -40°C ~ 125°C (TA) Voltage - Supply: 2.7V ~ 3.6V Technology: FLASH - NOR (SLC) Clock Frequency: 166 MHz Memory Format: FLASH Supplier Device Package: 24-FBGA (6x8) Write Cycle Time - Word, Page: 1.7ms Memory Interface: HyperBus Access Time: 6.5 ns Memory Organization: 64M x 8 DigiKey Programmable: Not Verified |
товару немає в наявності |
Мінімальне замовлення: 338 шт В кошику од. на суму грн. | ||||||||||
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S26HL512TFPBHM010 | Infineon Technologies |
Description: IC FLASH 512MBIT HYPERBUS 24FBGAPackaging: Tray Package / Case: 24-VBGA Mounting Type: Surface Mount Memory Size: 512Mbit Memory Type: Non-Volatile Operating Temperature: -40°C ~ 125°C (TA) Voltage - Supply: 2.7V ~ 3.6V Technology: FLASH - NOR (SLC) Clock Frequency: 166 MHz Memory Format: FLASH Supplier Device Package: 24-FBGA (6x8) Write Cycle Time - Word, Page: 1.7ms Memory Interface: HyperBus Access Time: 6.5 ns Memory Organization: 64M x 8 DigiKey Programmable: Not Verified |
товару немає в наявності |
Мінімальне замовлення: 338 шт В кошику од. на суму грн. | ||||||||||
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S28HL01GTFPBHI033 | Infineon Technologies |
Description: IC FLASH 1GBIT SPI/OCTAL 24FBGAPackaging: Tape & Reel (TR) Package / Case: 24-VBGA Mounting Type: Surface Mount Memory Size: 1Gbit Memory Type: Non-Volatile Operating Temperature: -40°C ~ 85°C (TA) Voltage - Supply: 2.7V ~ 3.6V Technology: FLASH - NOR (SLC) Clock Frequency: 166 MHz Memory Format: FLASH Supplier Device Package: 24-FBGA (8x8) Write Cycle Time - Word, Page: 1.7ms Memory Interface: SPI - Octal I/O Access Time: 6.5 ns Memory Organization: 128M x 8 DigiKey Programmable: Not Verified |
товару немає в наявності |
Мінімальне замовлення: 2500 шт В кошику од. на суму грн. | ||||||||||
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EVALISO2H823V25BTOBO1 | Infineon Technologies |
Description: EVAL BOARD FOR ISO2H823V2.5Embedded: No Secondary Attributes: On-Board LEDs Primary Attributes: 8-Channel (Octal) Utilized IC / Part: ISO2H823V2.5 Contents: Board(s) Type: Power Management Function: Power Distribution Switch (Load Switch) Packaging: Bulk |
на замовлення 2 шт: термін постачання 21-31 дні (днів) |
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ICE5QR1680BG1XUMA1 | Infineon Technologies |
Description: ICE5QR1680BG1XUMA1Packaging: Tape & Reel (TR) Package / Case: 16-SOIC (0.154", 3.90mm Width), 12 Leads Mounting Type: Surface Mount Operating Temperature: -40°C ~ 150°C (TJ) Internal Switch(s): Yes Voltage - Breakdown: 800V Output Isolation: Isolated Topology: Flyback Voltage - Supply (Vcc/Vdd): 10V ~ 32V Supplier Device Package: PG-DSO-12-24 Fault Protection: Current Limiting, Open Loop, Over Load, Over Temperature, Over Voltage, Short Circuit Voltage - Start Up: 16 V Control Features: Soft Start Power (Watts): 50 W |
товару немає в наявності |
Мінімальне замовлення: 2500 шт В кошику од. на суму грн. | ||||||||||
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ICE5QR1680BG1XUMA1 | Infineon Technologies |
Description: ICE5QR1680BG1XUMA1Packaging: Cut Tape (CT) Package / Case: 16-SOIC (0.154", 3.90mm Width), 12 Leads Mounting Type: Surface Mount Operating Temperature: -40°C ~ 150°C (TJ) Internal Switch(s): Yes Voltage - Breakdown: 800V Output Isolation: Isolated Topology: Flyback Voltage - Supply (Vcc/Vdd): 10V ~ 32V Supplier Device Package: PG-DSO-12-24 Fault Protection: Current Limiting, Open Loop, Over Load, Over Temperature, Over Voltage, Short Circuit Voltage - Start Up: 16 V Control Features: Soft Start Power (Watts): 50 W |
на замовлення 250 шт: термін постачання 21-31 дні (днів) |
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REF5QR1680BG127W1TOBO1 | Infineon Technologies |
Description: REF5QR1680BG127W1TOBO1Packaging: Box Voltage - Output: 5V, 12V Voltage - Input: 85 ~ 300 VAC Current - Output: 2.17A, 200mA Contents: Board(s) Regulator Topology: Flyback Utilized IC / Part: ICE5QR1680BG-1 Main Purpose: AC/DC Converter Outputs and Type: 2 Non-Isolated Outputs Power - Output: 27W |
на замовлення 5 шт: термін постачання 21-31 дні (днів) |
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EVAL2EP130RPRSICTOBO1 | Infineon Technologies |
Description: EVAL BOARD FOR 2EP130RPackaging: Box Function: Gate Driver Type: Power Management Contents: Board(s) Utilized IC / Part: 2EP130R |
на замовлення 5 шт: термін постачання 21-31 дні (днів) |
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IGLD65R080D2AUMA1 | Infineon Technologies |
Description: GANFET N-CH 650V 18A 8LDFNPackaging: Tape & Reel (TR) Package / Case: 8-LDFN Exposed Pad Mounting Type: Surface Mount Operating Temperature: -55°C ~ 150°C (TJ) Technology: GaNFET (Gallium Nitride) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 18A (Tc) Rds On (Max) @ Id, Vgs: 100mOhm @ 5.5A Power Dissipation (Max): 68W (Tc) Vgs(th) (Max) @ Id: 1.6V @ 1.8mA Supplier Device Package: PG-LSON-8-2 Vgs (Max): -10V Drain to Source Voltage (Vdss): 650 V Gate Charge (Qg) (Max) @ Vgs: 3.3 nC @ 3 V Input Capacitance (Ciss) (Max) @ Vds: 240 pF @ 400 V |
товару немає в наявності |
Мінімальне замовлення: 3000 шт В кошику од. на суму грн. | ||||||||||
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IGLD65R080D2AUMA1 | Infineon Technologies |
Description: GANFET N-CH 650V 18A 8LDFNPackaging: Cut Tape (CT) Package / Case: 8-LDFN Exposed Pad Mounting Type: Surface Mount Operating Temperature: -55°C ~ 150°C (TJ) Technology: GaNFET (Gallium Nitride) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 18A (Tc) Rds On (Max) @ Id, Vgs: 100mOhm @ 5.5A Power Dissipation (Max): 68W (Tc) Vgs(th) (Max) @ Id: 1.6V @ 1.8mA Supplier Device Package: PG-LSON-8-2 Vgs (Max): -10V Drain to Source Voltage (Vdss): 650 V Gate Charge (Qg) (Max) @ Vgs: 3.3 nC @ 3 V Input Capacitance (Ciss) (Max) @ Vds: 240 pF @ 400 V |
на замовлення 2102 шт: термін постачання 21-31 дні (днів) |
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AUIRB24427STR | Infineon Technologies |
Description: IC GATE DRVR LOW-SIDE 8SOICPackaging: Bulk Package / Case: 8-SOIC (0.154", 3.90mm Width) Mounting Type: Surface Mount Operating Temperature: -40°C ~ 150°C (TJ) Voltage - Supply: 5V ~ 20V Input Type: Non-Inverting Supplier Device Package: PG-DSO-8-9 Rise / Fall Time (Typ): 33ns, 33ns (Max) Channel Type: Independent Driven Configuration: Low-Side Number of Drivers: 2 Gate Type: MOSFET (N-Channel) Logic Voltage - VIL, VIH: 0.8V, 2.5V Current - Peak Output (Source, Sink): 6A, 6A DigiKey Programmable: Not Verified |
на замовлення 6992 шт: термін постачання 21-31 дні (днів) |
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IKQ40N120CT2XKSA1 | Infineon Technologies |
Description: IGBT TRENCH FS 1200V 80A TO247-3Packaging: Bulk Package / Case: TO-247-3 Mounting Type: Through Hole Operating Temperature: -40°C ~ 175°C (TJ) Input Type: Standard Vce(on) (Max) @ Vge, Ic: 2.15V @ 15V, 40A Supplier Device Package: PG-TO247-3-46 IGBT Type: Trench Field Stop Td (on/off) @ 25°C: 32ns/328ns Switching Energy: 3.1mJ (on), 2.9mJ (off) Test Condition: 600V, 40A, 12Ohm, 15V Gate Charge: 190 nC Current - Collector (Ic) (Max): 80 A Voltage - Collector Emitter Breakdown (Max): 1200 V Current - Collector Pulsed (Icm): 160 A Power - Max: 500 W |
на замовлення 1608 шт: термін постачання 21-31 дні (днів) |
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FF300R12ME4PB11BPSA1 | Infineon Technologies |
Description: IGBT MOD 1200V 600A 20MWInput Capacitance (Cies) @ Vce: 18.5 nF @ 25 V Current - Collector Cutoff (Max): 3 mA Voltage - Collector Emitter Breakdown (Max): 1200 V Current - Collector (Ic) (Max): 600 A IGBT Type: Trench Field Stop Supplier Device Package: Module NTC Thermistor: Yes Vce(on) (Max) @ Vge, Ic: 2.1V @ 15V, 300A Operating Temperature: -40°C ~ 150°C Configuration: Half Bridge Input: Standard Mounting Type: Chassis Mount Package / Case: Module Packaging: Tray |
товару немає в наявності |
Мінімальне замовлення: 6 шт В кошику од. на суму грн. | ||||||||||
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NBT2000A8K0T4USON8XTMA5 | Infineon Technologies |
Description: NBT2000A8K0T4USON8XTMA5Packaging: Tape & Reel (TR) Package / Case: 8-UDFN Exposed Pad Mounting Type: Surface Mount Frequency: 13.56MHz Interface: I2C Type: RFID Reader Operating Temperature: -40°C ~ 105°C (TA) Standards: ISO 14443-B Supplier Device Package: PG-USON-8-8 |
товару немає в наявності |
Мінімальне замовлення: 5000 шт В кошику од. на суму грн. | ||||||||||
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NBT2000A8K0T4USON8XTMA5 | Infineon Technologies |
Description: NBT2000A8K0T4USON8XTMA5Packaging: Cut Tape (CT) Package / Case: 8-UDFN Exposed Pad Mounting Type: Surface Mount Frequency: 13.56MHz Interface: I2C Type: RFID Reader Operating Temperature: -40°C ~ 105°C (TA) Standards: ISO 14443-B Supplier Device Package: PG-USON-8-8 |
на замовлення 102 шт: термін постачання 21-31 дні (днів) |
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| ESD175B1W01005E6327XTSA1 | Infineon Technologies |
Description: TVS DIODES Packaging: Tape & Reel (TR) |
товару немає в наявності |
Мінімальне замовлення: 15000 шт В кошику од. на суму грн. | |||||||||||
| ESD175B1W01005E6327XTSA1 | Infineon Technologies |
Description: TVS DIODES Packaging: Cut Tape (CT) |
товару немає в наявності |
В кошику од. на суму грн. | |||||||||||
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CY6264-70SNC | Infineon Technologies |
Description: IC SRAM 64KBIT PARALLEL 28SOICPackaging: Tube Package / Case: 28-SOIC (0.295", 7.50mm Width) Mounting Type: Surface Mount Memory Size: 64Kbit Memory Type: Volatile Operating Temperature: 0°C ~ 70°C (TA) Voltage - Supply: 4.5V ~ 5.5V Technology: SRAM - Asynchronous Memory Format: SRAM Supplier Device Package: 28-SOIC Write Cycle Time - Word, Page: 70ns Memory Interface: Parallel Access Time: 70 ns Memory Organization: 8K x 8 DigiKey Programmable: Not Verified |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||||
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CY6264-70SNXC | Infineon Technologies |
Description: IC SRAM 64KBIT PARALLEL 28SOICTechnology: SRAM - Asynchronous Voltage - Supply: 4.5V ~ 5.5V Operating Temperature: 0°C ~ 70°C (TA) Memory Type: Volatile Memory Size: 64Kbit Mounting Type: Surface Mount Package / Case: 28-SOIC (0.295", 7.50mm Width) Packaging: Tube DigiKey Programmable: Not Verified Memory Organization: 8K x 8 Access Time: 70 ns Memory Interface: Parallel Write Cycle Time - Word, Page: 70ns Supplier Device Package: 28-SOIC Memory Format: SRAM |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||||
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IRF540ZLPBF | Infineon Technologies |
Description: MOSFET N-CH 100V 36A TO262Packaging: Tube Package / Case: TO-262-3 Long Leads, I2PAK, TO-262AA Mounting Type: Through Hole Operating Temperature: -55°C ~ 175°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 36A (Tc) Rds On (Max) @ Id, Vgs: 26.5mOhm @ 22A, 10V Power Dissipation (Max): 92W (Tc) Vgs(th) (Max) @ Id: 4V @ 250µA Supplier Device Package: TO-262 Drive Voltage (Max Rds On, Min Rds On): 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 100 V Gate Charge (Qg) (Max) @ Vgs: 63 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 1770 pF @ 25 V |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||||
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IRF7311TR | Infineon Technologies |
Description: MOSFET 2N-CH 20V 6.6A 8SOSupplier Device Package: 8-SO Vgs(th) (Max) @ Id: 700mV @ 250µA FET Feature: Logic Level Gate Gate Charge (Qg) (Max) @ Vgs: 27nC @ 4.5V Rds On (Max) @ Id, Vgs: 29mOhm @ 6A, 4.5V Input Capacitance (Ciss) (Max) @ Vds: 900pF @ 15V Current - Continuous Drain (Id) @ 25°C: 6.6A Drain to Source Voltage (Vdss): 20V Power - Max: 2W Technology: MOSFET (Metal Oxide) Operating Temperature: -55°C ~ 150°C (TJ) Configuration: 2 N-Channel (Dual) Mounting Type: Surface Mount Package / Case: 8-SOIC (0.154", 3.90mm Width) Packaging: Tape & Reel (TR) |
товару немає в наявності |
Мінімальне замовлення: 4000 шт В кошику од. на суму грн. | ||||||||||
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CY8C4147AZQT415XQSA1 | Infineon Technologies |
Description: HMI-GROWTH PSOC4Number of I/O: 53 Supplier Device Package: 64-TQFP (10x10) Peripherals: Brown-out Detect/Reset, CapSense, DMA, POR, PWM, WDT Connectivity: I2C, LINbus, SPI, UART/USART Voltage - Supply (Vcc/Vdd): 1.71V ~ 5.5V Core Size: 32-Bit Data Converters: A/D 16x12b SAR Core Processor: ARM® Cortex®-M0+ Program Memory Type: FLASH Oscillator Type: Internal Operating Temperature: -40°C ~ 105°C (TA) RAM Size: 16K x 8 Program Memory Size: 128KB (128K x 8) Speed: 48MHz Mounting Type: Surface Mount Package / Case: 64-LQFP Packaging: Tray |
товару немає в наявності |
Мінімальне замовлення: 160 шт В кошику од. на суму грн. | ||||||||||
| PSC3M5EDLHQ1XQLA1 | Infineon Technologies |
Description: INDUSTRIAL-PSOC C3 Number of I/O: 39 Supplier Device Package: 64-VQFN (8x8) Peripherals: Brown-out Detect/Reset, DMA, I2S, POR, PWM, WDT Connectivity: CANbus, I2C, IrDA, LINbus, SPI, Smart Card, UART/USART Voltage - Supply (Vcc/Vdd): 1.71V ~ 3.6V Core Size: 32-Bit Data Converters: A/D 18x12b SAR Core Processor: ARM® Cortex®-M33F Program Memory Type: FLASH Oscillator Type: External, Internal Operating Temperature: -40°C ~ 105°C (TA) RAM Size: 64K x 8 Program Memory Size: 128KB (128K x 8) Speed: 199MHz Mounting Type: Surface Mount Package / Case: 64-VFQFN Exposed Pad Packaging: Tray |
товару немає в наявності |
Мінімальне замовлення: 3480 шт В кошику од. на суму грн. | |||||||||||
| CYT2CL7BXAQ0AZSGSHQLA1 | Infineon Technologies |
Description: TRAVEO-2 CLUST.2.5DGRAPH Packaging: Tray |
товару немає в наявності |
Мінімальне замовлення: 600 шт В кошику од. на суму грн. | |||||||||||
| CYT2CL7BXAQ0AZSGSTHUYA1 | Infineon Technologies |
Description: TRAVEO-2 CLUST.2.5DGRAPH Packaging: Tape & Reel (TR) |
товару немає в наявності |
Мінімальне замовлення: 300 шт В кошику од. на суму грн. | |||||||||||
| FS1150R08A8P3CHPSA1 | Infineon Technologies |
Description: IGBT MOD 750V 600A AGHDG2XT-7611Input Capacitance (Cies) @ Vce: 60800 pF @ 50 V Current - Collector Cutoff (Max): 1 mA Power - Max: 1 kW Voltage - Collector Emitter Breakdown (Max): 750 V Current - Collector (Ic) (Max): 600 A Supplier Device Package: AG-HDG2XT-7611 NTC Thermistor: No Vce(on) (Max) @ Vge, Ic: 1.21V @ 15V, 600A Operating Temperature: -40°C ~ 175°C (TJ) Configuration: Three Phase Inverter Input: Standard Mounting Type: Chassis Mount Package / Case: Module Packaging: Tray |
товару немає в наявності |
В кошику од. на суму грн. | |||||||||||
| 841000037001 | Infineon Technologies |
Description: IC MCU 32BIT 100LQFP DigiKey Programmable: Not Verified Packaging: Tray |
товару немає в наявності |
Мінімальне замовлення: 900 шт В кошику од. на суму грн. |
| IQFH39N04NM6ATMA1 |
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Виробник: Infineon Technologies
Description: TRENCH <= 40V
Input Capacitance (Ciss) (Max) @ Vds: 16400 pF @ 20 V
Gate Charge (Qg) (Max) @ Vgs: 273 nC @ 10 V
Drain to Source Voltage (Vdss): 40 V
Vgs (Max): ±20V
Drive Voltage (Max Rds On, Min Rds On): 6V, 10V
Supplier Device Package: PG-TSON-12-1
Vgs(th) (Max) @ Id: 2.8V @ 1.05mA
Power Dissipation (Max): 3W (Ta), 273W (Tc)
Rds On (Max) @ Id, Vgs: 0.39mOhm @ 100A, 10V
Current - Continuous Drain (Id) @ 25°C: 63A (Ta), 600A (Tc)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 175°C (TJ)
Mounting Type: Surface Mount
Package / Case: 12-PowerTDFN
Packaging: Cut Tape (CT)
Description: TRENCH <= 40V
Input Capacitance (Ciss) (Max) @ Vds: 16400 pF @ 20 V
Gate Charge (Qg) (Max) @ Vgs: 273 nC @ 10 V
Drain to Source Voltage (Vdss): 40 V
Vgs (Max): ±20V
Drive Voltage (Max Rds On, Min Rds On): 6V, 10V
Supplier Device Package: PG-TSON-12-1
Vgs(th) (Max) @ Id: 2.8V @ 1.05mA
Power Dissipation (Max): 3W (Ta), 273W (Tc)
Rds On (Max) @ Id, Vgs: 0.39mOhm @ 100A, 10V
Current - Continuous Drain (Id) @ 25°C: 63A (Ta), 600A (Tc)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 175°C (TJ)
Mounting Type: Surface Mount
Package / Case: 12-PowerTDFN
Packaging: Cut Tape (CT)
на замовлення 2996 шт:
термін постачання 21-31 дні (днів)
| Кількість | Ціна без ПДВ |
|---|---|
| 1+ | 414.58 грн |
| 10+ | 284.01 грн |
| 100+ | 208.07 грн |
| SAF-XC866-4FRA BC |
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Виробник: Infineon Technologies
Description: IC MCU 8BIT 16KB FLASH 38TSSOP
DigiKey Programmable: Not Verified
Number of I/O: 19
Supplier Device Package: PG-TSSOP-38
Peripherals: Brown-out Detect/Reset, POR, PWM, WDT
Connectivity: SSI, UART/USART
Voltage - Supply (Vcc/Vdd): 4.5V ~ 5.5V
Core Size: 8-Bit
Data Converters: A/D 8x10b
Core Processor: XC800
Program Memory Type: FLASH
Oscillator Type: Internal
Operating Temperature: -40°C ~ 85°C (TA)
RAM Size: 768 x 8
Program Memory Size: 16KB (16K x 8)
Speed: 86MHz
Mounting Type: Surface Mount
Package / Case: 38-TFSOP (0.173", 4.40mm Width)
Packaging: Tape & Reel (TR)
Description: IC MCU 8BIT 16KB FLASH 38TSSOP
DigiKey Programmable: Not Verified
Number of I/O: 19
Supplier Device Package: PG-TSSOP-38
Peripherals: Brown-out Detect/Reset, POR, PWM, WDT
Connectivity: SSI, UART/USART
Voltage - Supply (Vcc/Vdd): 4.5V ~ 5.5V
Core Size: 8-Bit
Data Converters: A/D 8x10b
Core Processor: XC800
Program Memory Type: FLASH
Oscillator Type: Internal
Operating Temperature: -40°C ~ 85°C (TA)
RAM Size: 768 x 8
Program Memory Size: 16KB (16K x 8)
Speed: 86MHz
Mounting Type: Surface Mount
Package / Case: 38-TFSOP (0.173", 4.40mm Width)
Packaging: Tape & Reel (TR)
товару немає в наявності
В кошику
од. на суму грн.
| SPU02N60S5BKMA1 |
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Виробник: Infineon Technologies
Description: MOSFET N-CH 600V 1.8A TO251-3
Packaging: Bulk
Package / Case: TO-251-3 Short Leads, IPak, TO-251AA
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 1.8A (Tc)
Rds On (Max) @ Id, Vgs: 3Ohm @ 1.1A, 10V
Power Dissipation (Max): 25W (Tc)
Vgs(th) (Max) @ Id: 5.5V @ 80µA
Supplier Device Package: PG-TO251-3-21
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 600 V
Gate Charge (Qg) (Max) @ Vgs: 9.5 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 240 pF @ 25 V
Description: MOSFET N-CH 600V 1.8A TO251-3
Packaging: Bulk
Package / Case: TO-251-3 Short Leads, IPak, TO-251AA
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 1.8A (Tc)
Rds On (Max) @ Id, Vgs: 3Ohm @ 1.1A, 10V
Power Dissipation (Max): 25W (Tc)
Vgs(th) (Max) @ Id: 5.5V @ 80µA
Supplier Device Package: PG-TO251-3-21
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 600 V
Gate Charge (Qg) (Max) @ Vgs: 9.5 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 240 pF @ 25 V
на замовлення 23717 шт:
термін постачання 21-31 дні (днів)
| Кількість | Ціна без ПДВ |
|---|---|
| 296+ | 67.10 грн |
| IMT65R033M2HXUMA1 |
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Виробник: Infineon Technologies
Description: SILICON CARBIDE MOSFET
Packaging: Tape & Reel (TR)
Package / Case: 8-PowerSFN
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: SiCFET (Silicon Carbide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 68A (Tc)
Rds On (Max) @ Id, Vgs: 30mOhm @ 27.9A, 20V
Power Dissipation (Max): 312W (Tc)
Vgs(th) (Max) @ Id: 5.6V @ 5.7mA
Supplier Device Package: PG-HSOF-8-2
Drive Voltage (Max Rds On, Min Rds On): 15V, 20V
Vgs (Max): +23V, -7V
Drain to Source Voltage (Vdss): 650 V
Gate Charge (Qg) (Max) @ Vgs: 34 nC @ 18 V
Input Capacitance (Ciss) (Max) @ Vds: 1215 pF @ 400 V
Description: SILICON CARBIDE MOSFET
Packaging: Tape & Reel (TR)
Package / Case: 8-PowerSFN
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: SiCFET (Silicon Carbide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 68A (Tc)
Rds On (Max) @ Id, Vgs: 30mOhm @ 27.9A, 20V
Power Dissipation (Max): 312W (Tc)
Vgs(th) (Max) @ Id: 5.6V @ 5.7mA
Supplier Device Package: PG-HSOF-8-2
Drive Voltage (Max Rds On, Min Rds On): 15V, 20V
Vgs (Max): +23V, -7V
Drain to Source Voltage (Vdss): 650 V
Gate Charge (Qg) (Max) @ Vgs: 34 nC @ 18 V
Input Capacitance (Ciss) (Max) @ Vds: 1215 pF @ 400 V
товару немає в наявності
Мінімальне замовлення: 2000 шт
В кошику
од. на суму грн.
| IMT65R033M2HXUMA1 |
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Виробник: Infineon Technologies
Description: SILICON CARBIDE MOSFET
Packaging: Cut Tape (CT)
Package / Case: 8-PowerSFN
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: SiCFET (Silicon Carbide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 68A (Tc)
Rds On (Max) @ Id, Vgs: 30mOhm @ 27.9A, 20V
Power Dissipation (Max): 312W (Tc)
Vgs(th) (Max) @ Id: 5.6V @ 5.7mA
Supplier Device Package: PG-HSOF-8-2
Drive Voltage (Max Rds On, Min Rds On): 15V, 20V
Vgs (Max): +23V, -7V
Drain to Source Voltage (Vdss): 650 V
Gate Charge (Qg) (Max) @ Vgs: 34 nC @ 18 V
Input Capacitance (Ciss) (Max) @ Vds: 1215 pF @ 400 V
Description: SILICON CARBIDE MOSFET
Packaging: Cut Tape (CT)
Package / Case: 8-PowerSFN
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: SiCFET (Silicon Carbide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 68A (Tc)
Rds On (Max) @ Id, Vgs: 30mOhm @ 27.9A, 20V
Power Dissipation (Max): 312W (Tc)
Vgs(th) (Max) @ Id: 5.6V @ 5.7mA
Supplier Device Package: PG-HSOF-8-2
Drive Voltage (Max Rds On, Min Rds On): 15V, 20V
Vgs (Max): +23V, -7V
Drain to Source Voltage (Vdss): 650 V
Gate Charge (Qg) (Max) @ Vgs: 34 nC @ 18 V
Input Capacitance (Ciss) (Max) @ Vds: 1215 pF @ 400 V
на замовлення 1103 шт:
термін постачання 21-31 дні (днів)
| Кількість | Ціна без ПДВ |
|---|---|
| 1+ | 689.67 грн |
| 10+ | 456.53 грн |
| 100+ | 347.17 грн |
| CY8C20636A-24LTXI |
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Виробник: Infineon Technologies
Description: MCU 8K FLASH 1K SRAM 48QFN
Packaging: Tray
Package / Case: 48-VFQFN Exposed Pad
Mounting Type: Surface Mount
Interface: I2C, SPI
RAM Size: 1K x 8
Operating Temperature: -40°C ~ 85°C
Voltage - Supply: 1.71V ~ 5.5V
Controller Series: CY8C20xx6A
Program Memory Type: FLASH (8kB)
Applications: Capacitive Sensing
Core Processor: M8C
Supplier Device Package: 48-QFN (7x7)
Number of I/O: 36
DigiKey Programmable: Not Verified
Description: MCU 8K FLASH 1K SRAM 48QFN
Packaging: Tray
Package / Case: 48-VFQFN Exposed Pad
Mounting Type: Surface Mount
Interface: I2C, SPI
RAM Size: 1K x 8
Operating Temperature: -40°C ~ 85°C
Voltage - Supply: 1.71V ~ 5.5V
Controller Series: CY8C20xx6A
Program Memory Type: FLASH (8kB)
Applications: Capacitive Sensing
Core Processor: M8C
Supplier Device Package: 48-QFN (7x7)
Number of I/O: 36
DigiKey Programmable: Not Verified
товару немає в наявності
Мінімальне замовлення: 520 шт
В кошику
од. на суму грн.
| SIGC28T60SEX1SA2 |
Виробник: Infineon Technologies
Description: IGBT TRENCH FS 600V 50A DIE
Packaging: Bulk
Package / Case: Die
Mounting Type: Surface Mount
Operating Temperature: -40°C ~ 175°C (TJ)
Input Type: Standard
Vce(on) (Max) @ Vge, Ic: 2.05V @ 15V, 50A
Supplier Device Package: Die
IGBT Type: Trench Field Stop
Current - Collector (Ic) (Max): 50 A
Voltage - Collector Emitter Breakdown (Max): 600 V
Current - Collector Pulsed (Icm): 150 A
Description: IGBT TRENCH FS 600V 50A DIE
Packaging: Bulk
Package / Case: Die
Mounting Type: Surface Mount
Operating Temperature: -40°C ~ 175°C (TJ)
Input Type: Standard
Vce(on) (Max) @ Vge, Ic: 2.05V @ 15V, 50A
Supplier Device Package: Die
IGBT Type: Trench Field Stop
Current - Collector (Ic) (Max): 50 A
Voltage - Collector Emitter Breakdown (Max): 600 V
Current - Collector Pulsed (Icm): 150 A
товару немає в наявності
В кошику
од. на суму грн.
| CYPD8225-97BZXIT |
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Виробник: Infineon Technologies
Description: IC USB MCU 256KB FLASH 97-VFBGA
Packaging: Cut Tape (CT)
Package / Case: 97-VFBGA
Mounting Type: Surface Mount
Interface: I2C, SPI, UART, USB
RAM Size: 32K x 8
Operating Temperature: -40°C ~ 85°C (TA)
Voltage - Supply: 2.7V ~ 5.5V
Controller Series: EZ-PD™
Program Memory Type: FLASH (256kB), ROM (96kB)
Applications: USB Type C
Core Processor: ARM® Cortex®-M0+
Supplier Device Package: 97-BGA (6x6)
Number of I/O: 50
Description: IC USB MCU 256KB FLASH 97-VFBGA
Packaging: Cut Tape (CT)
Package / Case: 97-VFBGA
Mounting Type: Surface Mount
Interface: I2C, SPI, UART, USB
RAM Size: 32K x 8
Operating Temperature: -40°C ~ 85°C (TA)
Voltage - Supply: 2.7V ~ 5.5V
Controller Series: EZ-PD™
Program Memory Type: FLASH (256kB), ROM (96kB)
Applications: USB Type C
Core Processor: ARM® Cortex®-M0+
Supplier Device Package: 97-BGA (6x6)
Number of I/O: 50
товару немає в наявності
В кошику
од. на суму грн.
| SPD02N60S5BTMA1 |
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Виробник: Infineon Technologies
Description: MOSFET N-CH 600V 1.8A TO252-3
Packaging: Bulk
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 1.8A (Tc)
Rds On (Max) @ Id, Vgs: 3Ohm @ 1.1A, 10V
Power Dissipation (Max): 25W (Tc)
Vgs(th) (Max) @ Id: 5.5V @ 80µA
Supplier Device Package: PG-TO252-3-11
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 600 V
Gate Charge (Qg) (Max) @ Vgs: 9.5 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 240 pF @ 25 V
Description: MOSFET N-CH 600V 1.8A TO252-3
Packaging: Bulk
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 1.8A (Tc)
Rds On (Max) @ Id, Vgs: 3Ohm @ 1.1A, 10V
Power Dissipation (Max): 25W (Tc)
Vgs(th) (Max) @ Id: 5.5V @ 80µA
Supplier Device Package: PG-TO252-3-11
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 600 V
Gate Charge (Qg) (Max) @ Vgs: 9.5 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 240 pF @ 25 V
на замовлення 13370 шт:
термін постачання 21-31 дні (днів)
| Кількість | Ціна без ПДВ |
|---|---|
| 568+ | 35.00 грн |
| IPW60R099CM8XKSA1 |
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Виробник: Infineon Technologies
Description: IPW60R099CM8XKSA1
Packaging: Tape & Reel (TR)
Package / Case: TO-247-3
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 29A (Tc)
Rds On (Max) @ Id, Vgs: 99mOhm @ 10.1A, 10V
Power Dissipation (Max): 176W (Tc)
Vgs(th) (Max) @ Id: 4.7V @ 260µA
Supplier Device Package: PG-TO247-3-U06
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 600 V
Gate Charge (Qg) (Max) @ Vgs: 31 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 1330 pF @ 400 V
Description: IPW60R099CM8XKSA1
Packaging: Tape & Reel (TR)
Package / Case: TO-247-3
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 29A (Tc)
Rds On (Max) @ Id, Vgs: 99mOhm @ 10.1A, 10V
Power Dissipation (Max): 176W (Tc)
Vgs(th) (Max) @ Id: 4.7V @ 260µA
Supplier Device Package: PG-TO247-3-U06
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 600 V
Gate Charge (Qg) (Max) @ Vgs: 31 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 1330 pF @ 400 V
на замовлення 334 шт:
термін постачання 21-31 дні (днів)
| Кількість | Ціна без ПДВ |
|---|---|
| 2+ | 306.86 грн |
| 30+ | 164.17 грн |
| 120+ | 135.36 грн |
| IPW60R055CM8XKSA1 |
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Виробник: Infineon Technologies
Description: IPW60R055CM8XKSA1
Packaging: Tube
Package / Case: TO-247-3
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 44A (Tc)
Rds On (Max) @ Id, Vgs: 55mOhm @ 18.2A, 10V
Power Dissipation (Max): 227W (Tc)
Vgs(th) (Max) @ Id: 4.7V @ 440µA
Supplier Device Package: PG-TO247-3-U06
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 600 V
Gate Charge (Qg) (Max) @ Vgs: 51 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 2245 pF @ 400 V
Description: IPW60R055CM8XKSA1
Packaging: Tube
Package / Case: TO-247-3
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 44A (Tc)
Rds On (Max) @ Id, Vgs: 55mOhm @ 18.2A, 10V
Power Dissipation (Max): 227W (Tc)
Vgs(th) (Max) @ Id: 4.7V @ 440µA
Supplier Device Package: PG-TO247-3-U06
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 600 V
Gate Charge (Qg) (Max) @ Vgs: 51 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 2245 pF @ 400 V
на замовлення 135 шт:
термін постачання 21-31 дні (днів)
| Кількість | Ціна без ПДВ |
|---|---|
| 1+ | 402.95 грн |
| 30+ | 220.65 грн |
| 120+ | 183.87 грн |
| IPW60R024CM8XKSA1 |
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Виробник: Infineon Technologies
Description: IPW60R024CM8XKSA1
Packaging: Tape & Reel (TR)
Package / Case: TO-247-3
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 91A (Tc)
Rds On (Max) @ Id, Vgs: 24mOhm @ 41.7A, 10V
Power Dissipation (Max): 431W (Tc)
Vgs(th) (Max) @ Id: 4.7V @ 1.06mA
Supplier Device Package: PG-TO247-3-U06
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 600 V
Gate Charge (Qg) (Max) @ Vgs: 122 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 5382 pF @ 400 V
Description: IPW60R024CM8XKSA1
Packaging: Tape & Reel (TR)
Package / Case: TO-247-3
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 91A (Tc)
Rds On (Max) @ Id, Vgs: 24mOhm @ 41.7A, 10V
Power Dissipation (Max): 431W (Tc)
Vgs(th) (Max) @ Id: 4.7V @ 1.06mA
Supplier Device Package: PG-TO247-3-U06
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 600 V
Gate Charge (Qg) (Max) @ Vgs: 122 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 5382 pF @ 400 V
на замовлення 359 шт:
термін постачання 21-31 дні (днів)
| Кількість | Ціна без ПДВ |
|---|---|
| 1+ | 697.42 грн |
| 30+ | 399.94 грн |
| 120+ | 340.36 грн |
| IPW60R120CM8XKSA1 |
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Виробник: Infineon Technologies
Description: IPW60R120CM8XKSA1
Packaging: Tube
Package / Case: TO-247-3
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 23A (Tc)
Rds On (Max) @ Id, Vgs: 120mOhm @ 8.3A, 10V
Power Dissipation (Max): 131W (Tc)
Vgs(th) (Max) @ Id: 4.7V @ 200µA
Supplier Device Package: PG-TO247-3-U06
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 600 V
Gate Charge (Qg) (Max) @ Vgs: 24 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 1045 pF @ 400 V
Description: IPW60R120CM8XKSA1
Packaging: Tube
Package / Case: TO-247-3
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 23A (Tc)
Rds On (Max) @ Id, Vgs: 120mOhm @ 8.3A, 10V
Power Dissipation (Max): 131W (Tc)
Vgs(th) (Max) @ Id: 4.7V @ 200µA
Supplier Device Package: PG-TO247-3-U06
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 600 V
Gate Charge (Qg) (Max) @ Vgs: 24 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 1045 pF @ 400 V
на замовлення 184 шт:
термін постачання 21-31 дні (днів)
| Кількість | Ціна без ПДВ |
|---|---|
| 2+ | 285.17 грн |
| 30+ | 151.11 грн |
| 120+ | 123.85 грн |
| IPW60R070CM8XKSA1 |
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Виробник: Infineon Technologies
Description: IPW60R070CM8XKSA1
Packaging: Tube
Package / Case: TO-247-3
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 37A (Tc)
Rds On (Max) @ Id, Vgs: 70mOhm @ 14.3A, 10V
Power Dissipation (Max): 201W (Tc)
Vgs(th) (Max) @ Id: 4.7V @ 360µA
Supplier Device Package: PG-TO247-3-U06
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 600 V
Gate Charge (Qg) (Max) @ Vgs: 43 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 1878 pF @ 400 V
Description: IPW60R070CM8XKSA1
Packaging: Tube
Package / Case: TO-247-3
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 37A (Tc)
Rds On (Max) @ Id, Vgs: 70mOhm @ 14.3A, 10V
Power Dissipation (Max): 201W (Tc)
Vgs(th) (Max) @ Id: 4.7V @ 360µA
Supplier Device Package: PG-TO247-3-U06
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 600 V
Gate Charge (Qg) (Max) @ Vgs: 43 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 1878 pF @ 400 V
на замовлення 32 шт:
термін постачання 21-31 дні (днів)
| Кількість | Ціна без ПДВ |
|---|---|
| 1+ | 361.11 грн |
| 30+ | 196.43 грн |
| IPP040N08NF2SAKMA1 |
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Виробник: Infineon Technologies
Description: TRENCH 40<-<100V
Packaging: Bulk
Package / Case: TO-220-3
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 22A (Ta), 115A (Tc)
Rds On (Max) @ Id, Vgs: 4mOhm @ 80A, 10V
Power Dissipation (Max): 3.8W (Ta), 150W (Tc)
Vgs(th) (Max) @ Id: 3.8V @ 85µA
Supplier Device Package: PG-TO220-3
Drive Voltage (Max Rds On, Min Rds On): 6V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 80 V
Gate Charge (Qg) (Max) @ Vgs: 81 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 3800 pF @ 40 V
Description: TRENCH 40<-<100V
Packaging: Bulk
Package / Case: TO-220-3
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 22A (Ta), 115A (Tc)
Rds On (Max) @ Id, Vgs: 4mOhm @ 80A, 10V
Power Dissipation (Max): 3.8W (Ta), 150W (Tc)
Vgs(th) (Max) @ Id: 3.8V @ 85µA
Supplier Device Package: PG-TO220-3
Drive Voltage (Max Rds On, Min Rds On): 6V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 80 V
Gate Charge (Qg) (Max) @ Vgs: 81 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 3800 pF @ 40 V
на замовлення 250000 шт:
термін постачання 21-31 дні (днів)
| Кількість | Ціна без ПДВ |
|---|---|
| 189+ | 106.42 грн |
| CYT2B75CADQ0AZEGST |
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Виробник: Infineon Technologies
Description: IC MCU 32BT 1.0625MB FLSH 100QFP
RAM Size: 128K x 8
Program Memory Size: 1.0625MB (1.0625M x 8)
Speed: 100MHz, 160MHz
Mounting Type: Surface Mount
Package / Case: 100-LQFP
Packaging: Cut Tape (CT)
DigiKey Programmable: Not Verified
Number of I/O: 78
Supplier Device Package: 100-LQFP (14x14)
Peripherals: Brown-out Detect/Reset, Crypto - AES, DMA, LVD, POR, PWM, SHA, TRNG, WDT
Connectivity: CANbus, FIFO, I2C, IrDA, LINbus, SPI, UART/USART
Voltage - Supply (Vcc/Vdd): 2.7V ~ 5.5V
Core Size: 32-Bit Dual-Core
Data Converters: A/D 57x12b SAR
Core Processor: ARM® Cortex®-M0+, ARM® Cortex®-M4F
EEPROM Size: 96K x 8
Program Memory Type: FLASH
Oscillator Type: External, Internal
Operating Temperature: -40°C ~ 125°C (TA)
Description: IC MCU 32BT 1.0625MB FLSH 100QFP
RAM Size: 128K x 8
Program Memory Size: 1.0625MB (1.0625M x 8)
Speed: 100MHz, 160MHz
Mounting Type: Surface Mount
Package / Case: 100-LQFP
Packaging: Cut Tape (CT)
DigiKey Programmable: Not Verified
Number of I/O: 78
Supplier Device Package: 100-LQFP (14x14)
Peripherals: Brown-out Detect/Reset, Crypto - AES, DMA, LVD, POR, PWM, SHA, TRNG, WDT
Connectivity: CANbus, FIFO, I2C, IrDA, LINbus, SPI, UART/USART
Voltage - Supply (Vcc/Vdd): 2.7V ~ 5.5V
Core Size: 32-Bit Dual-Core
Data Converters: A/D 57x12b SAR
Core Processor: ARM® Cortex®-M0+, ARM® Cortex®-M4F
EEPROM Size: 96K x 8
Program Memory Type: FLASH
Oscillator Type: External, Internal
Operating Temperature: -40°C ~ 125°C (TA)
на замовлення 500 шт:
термін постачання 21-31 дні (днів)
| Кількість | Ціна без ПДВ |
|---|---|
| 1+ | 925.24 грн |
| 10+ | 703.23 грн |
| 25+ | 656.18 грн |
| 100+ | 567.32 грн |
| 250+ | 544.22 грн |
| S26HS512TGABHI003 |
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Виробник: Infineon Technologies
Description: IC FLASH 512MBIT HYPERBUS 24FBGA
Packaging: Tape & Reel (TR)
Package / Case: 24-VBGA
Mounting Type: Surface Mount
Memory Size: 512Mbit
Memory Type: Non-Volatile
Operating Temperature: -40°C ~ 85°C (TA)
Voltage - Supply: 1.7V ~ 2V
Technology: FLASH - NOR (SLC)
Clock Frequency: 200 MHz
Memory Format: FLASH
Supplier Device Package: 24-FBGA (8x8)
Write Cycle Time - Word, Page: 1.7ms
Memory Interface: HyperBus
Access Time: 5.45 ns
Memory Organization: 64M x 8
DigiKey Programmable: Not Verified
Description: IC FLASH 512MBIT HYPERBUS 24FBGA
Packaging: Tape & Reel (TR)
Package / Case: 24-VBGA
Mounting Type: Surface Mount
Memory Size: 512Mbit
Memory Type: Non-Volatile
Operating Temperature: -40°C ~ 85°C (TA)
Voltage - Supply: 1.7V ~ 2V
Technology: FLASH - NOR (SLC)
Clock Frequency: 200 MHz
Memory Format: FLASH
Supplier Device Package: 24-FBGA (8x8)
Write Cycle Time - Word, Page: 1.7ms
Memory Interface: HyperBus
Access Time: 5.45 ns
Memory Organization: 64M x 8
DigiKey Programmable: Not Verified
товару немає в наявності
Мінімальне замовлення: 2500 шт
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од. на суму грн.
| S26HL512TFPBHV003 |
![]() |
Виробник: Infineon Technologies
Description: IC FLASH 512MBIT HYPERBUS 24FBGA
Packaging: Tape & Reel (TR)
Package / Case: 24-VBGA
Mounting Type: Surface Mount
Memory Size: 512Mbit
Memory Type: Non-Volatile
Operating Temperature: -40°C ~ 105°C (TA)
Voltage - Supply: 2.7V ~ 3.6V
Technology: FLASH - NOR (SLC)
Clock Frequency: 166 MHz
Memory Format: FLASH
Supplier Device Package: 24-FBGA (6x8)
Write Cycle Time - Word, Page: 1.7ms
Memory Interface: HyperBus
Access Time: 6.5 ns
Memory Organization: 64M x 8
DigiKey Programmable: Not Verified
Description: IC FLASH 512MBIT HYPERBUS 24FBGA
Packaging: Tape & Reel (TR)
Package / Case: 24-VBGA
Mounting Type: Surface Mount
Memory Size: 512Mbit
Memory Type: Non-Volatile
Operating Temperature: -40°C ~ 105°C (TA)
Voltage - Supply: 2.7V ~ 3.6V
Technology: FLASH - NOR (SLC)
Clock Frequency: 166 MHz
Memory Format: FLASH
Supplier Device Package: 24-FBGA (6x8)
Write Cycle Time - Word, Page: 1.7ms
Memory Interface: HyperBus
Access Time: 6.5 ns
Memory Organization: 64M x 8
DigiKey Programmable: Not Verified
товару немає в наявності
Мінімальне замовлення: 2500 шт
В кошику
од. на суму грн.
| S26HL512TFPBHV013 |
![]() |
Виробник: Infineon Technologies
Description: IC FLASH 512MBIT HYPERBUS 24FBGA
Packaging: Tape & Reel (TR)
Package / Case: 24-VBGA
Mounting Type: Surface Mount
Memory Size: 512Mbit
Memory Type: Non-Volatile
Operating Temperature: -40°C ~ 105°C (TA)
Voltage - Supply: 2.7V ~ 3.6V
Technology: FLASH - NOR (SLC)
Clock Frequency: 166 MHz
Memory Format: FLASH
Supplier Device Package: 24-FBGA (6x8)
Write Cycle Time - Word, Page: 1.7ms
Memory Interface: HyperBus
Access Time: 6.5 ns
Memory Organization: 64M x 8
DigiKey Programmable: Not Verified
Description: IC FLASH 512MBIT HYPERBUS 24FBGA
Packaging: Tape & Reel (TR)
Package / Case: 24-VBGA
Mounting Type: Surface Mount
Memory Size: 512Mbit
Memory Type: Non-Volatile
Operating Temperature: -40°C ~ 105°C (TA)
Voltage - Supply: 2.7V ~ 3.6V
Technology: FLASH - NOR (SLC)
Clock Frequency: 166 MHz
Memory Format: FLASH
Supplier Device Package: 24-FBGA (6x8)
Write Cycle Time - Word, Page: 1.7ms
Memory Interface: HyperBus
Access Time: 6.5 ns
Memory Organization: 64M x 8
DigiKey Programmable: Not Verified
товару немає в наявності
Мінімальне замовлення: 2500 шт
В кошику
од. на суму грн.
| S26HS512TGABHV013 |
![]() |
Виробник: Infineon Technologies
Description: IC FLASH 512MBIT HYPERBUS 24FBGA
Packaging: Tape & Reel (TR)
Package / Case: 24-VBGA
Mounting Type: Surface Mount
Memory Size: 512Mbit
Memory Type: Non-Volatile
Operating Temperature: -40°C ~ 105°C (TA)
Voltage - Supply: 1.7V ~ 2V
Technology: FLASH - NOR (SLC)
Clock Frequency: 200 MHz
Memory Format: FLASH
Supplier Device Package: 24-FBGA (6x8)
Write Cycle Time - Word, Page: 1.7ms
Memory Interface: HyperBus
Access Time: 5.45 ns
Memory Organization: 64M x 8
DigiKey Programmable: Not Verified
Description: IC FLASH 512MBIT HYPERBUS 24FBGA
Packaging: Tape & Reel (TR)
Package / Case: 24-VBGA
Mounting Type: Surface Mount
Memory Size: 512Mbit
Memory Type: Non-Volatile
Operating Temperature: -40°C ~ 105°C (TA)
Voltage - Supply: 1.7V ~ 2V
Technology: FLASH - NOR (SLC)
Clock Frequency: 200 MHz
Memory Format: FLASH
Supplier Device Package: 24-FBGA (6x8)
Write Cycle Time - Word, Page: 1.7ms
Memory Interface: HyperBus
Access Time: 5.45 ns
Memory Organization: 64M x 8
DigiKey Programmable: Not Verified
товару немає в наявності
Мінімальне замовлення: 2500 шт
В кошику
од. на суму грн.
| S28HL512TFPBHV010 |
![]() |
Виробник: Infineon Technologies
Description: IC FLASH 512MBIT SPI/OCTL 24FBGA
Packaging: Tray
Package / Case: 24-VBGA
Mounting Type: Surface Mount
Memory Size: 512Mbit
Memory Type: Non-Volatile
Operating Temperature: -40°C ~ 105°C (TA)
Voltage - Supply: 2.7V ~ 3.6V
Technology: FLASH - NOR (SLC)
Clock Frequency: 166 MHz
Memory Format: FLASH
Supplier Device Package: 24-FBGA (6x8)
Write Cycle Time - Word, Page: 1.7ms
Memory Interface: SPI - Octal I/O
Access Time: 6.5 ns
Memory Organization: 64M x 8
DigiKey Programmable: Not Verified
Description: IC FLASH 512MBIT SPI/OCTL 24FBGA
Packaging: Tray
Package / Case: 24-VBGA
Mounting Type: Surface Mount
Memory Size: 512Mbit
Memory Type: Non-Volatile
Operating Temperature: -40°C ~ 105°C (TA)
Voltage - Supply: 2.7V ~ 3.6V
Technology: FLASH - NOR (SLC)
Clock Frequency: 166 MHz
Memory Format: FLASH
Supplier Device Package: 24-FBGA (6x8)
Write Cycle Time - Word, Page: 1.7ms
Memory Interface: SPI - Octal I/O
Access Time: 6.5 ns
Memory Organization: 64M x 8
DigiKey Programmable: Not Verified
товару немає в наявності
Мінімальне замовлення: 338 шт
В кошику
од. на суму грн.
| S28HL512TFPBHB013 |
![]() |
Виробник: Infineon Technologies
Description: IC FLASH 512MBIT SPI/OCTL 24FBGA
Packaging: Tape & Reel (TR)
Package / Case: 24-VBGA
Mounting Type: Surface Mount
Memory Size: 512Mbit
Memory Type: Non-Volatile
Operating Temperature: -40°C ~ 105°C (TA)
Voltage - Supply: 2.7V ~ 3.6V
Technology: FLASH - NOR (SLC)
Clock Frequency: 166 MHz
Memory Format: FLASH
Supplier Device Package: 24-FBGA (6x8)
Write Cycle Time - Word, Page: 1.7ms
Memory Interface: SPI - Octal I/O
Access Time: 6.5 ns
Memory Organization: 64M x 8
DigiKey Programmable: Not Verified
Description: IC FLASH 512MBIT SPI/OCTL 24FBGA
Packaging: Tape & Reel (TR)
Package / Case: 24-VBGA
Mounting Type: Surface Mount
Memory Size: 512Mbit
Memory Type: Non-Volatile
Operating Temperature: -40°C ~ 105°C (TA)
Voltage - Supply: 2.7V ~ 3.6V
Technology: FLASH - NOR (SLC)
Clock Frequency: 166 MHz
Memory Format: FLASH
Supplier Device Package: 24-FBGA (6x8)
Write Cycle Time - Word, Page: 1.7ms
Memory Interface: SPI - Octal I/O
Access Time: 6.5 ns
Memory Organization: 64M x 8
DigiKey Programmable: Not Verified
товару немає в наявності
Мінімальне замовлення: 2500 шт
В кошику
од. на суму грн.
| S26HL512TFPBHB003 |
![]() |
Виробник: Infineon Technologies
Description: IC FLASH 512MBIT HYPERBUS 24FBGA
Packaging: Tape & Reel (TR)
Package / Case: 24-VBGA
Mounting Type: Surface Mount
Memory Size: 512Mbit
Memory Type: Non-Volatile
Operating Temperature: -40°C ~ 105°C (TA)
Voltage - Supply: 2.7V ~ 3.6V
Technology: FLASH - NOR (SLC)
Clock Frequency: 166 MHz
Memory Format: FLASH
Supplier Device Package: 24-FBGA (6x8)
Write Cycle Time - Word, Page: 1.7ms
Memory Interface: HyperBus
Access Time: 6.5 ns
Memory Organization: 64M x 8
DigiKey Programmable: Not Verified
Description: IC FLASH 512MBIT HYPERBUS 24FBGA
Packaging: Tape & Reel (TR)
Package / Case: 24-VBGA
Mounting Type: Surface Mount
Memory Size: 512Mbit
Memory Type: Non-Volatile
Operating Temperature: -40°C ~ 105°C (TA)
Voltage - Supply: 2.7V ~ 3.6V
Technology: FLASH - NOR (SLC)
Clock Frequency: 166 MHz
Memory Format: FLASH
Supplier Device Package: 24-FBGA (6x8)
Write Cycle Time - Word, Page: 1.7ms
Memory Interface: HyperBus
Access Time: 6.5 ns
Memory Organization: 64M x 8
DigiKey Programmable: Not Verified
товару немає в наявності
Мінімальне замовлення: 2500 шт
В кошику
од. на суму грн.
| S26HL512TFPBHB013 |
![]() |
Виробник: Infineon Technologies
Description: IC FLASH 512MBIT HYPERBUS 24FBGA
Packaging: Tape & Reel (TR)
Package / Case: 24-VBGA
Mounting Type: Surface Mount
Memory Size: 512Mbit
Memory Type: Non-Volatile
Operating Temperature: -40°C ~ 105°C (TA)
Voltage - Supply: 2.7V ~ 3.6V
Technology: FLASH - NOR (SLC)
Clock Frequency: 166 MHz
Memory Format: FLASH
Supplier Device Package: 24-FBGA (6x8)
Write Cycle Time - Word, Page: 1.7ms
Memory Interface: HyperBus
Access Time: 6.5 ns
Memory Organization: 64M x 8
DigiKey Programmable: Not Verified
Description: IC FLASH 512MBIT HYPERBUS 24FBGA
Packaging: Tape & Reel (TR)
Package / Case: 24-VBGA
Mounting Type: Surface Mount
Memory Size: 512Mbit
Memory Type: Non-Volatile
Operating Temperature: -40°C ~ 105°C (TA)
Voltage - Supply: 2.7V ~ 3.6V
Technology: FLASH - NOR (SLC)
Clock Frequency: 166 MHz
Memory Format: FLASH
Supplier Device Package: 24-FBGA (6x8)
Write Cycle Time - Word, Page: 1.7ms
Memory Interface: HyperBus
Access Time: 6.5 ns
Memory Organization: 64M x 8
DigiKey Programmable: Not Verified
товару немає в наявності
Мінімальне замовлення: 2500 шт
В кошику
од. на суму грн.
| S26HS512TGABHV010 |
![]() |
Виробник: Infineon Technologies
Description: IC FLASH 512MBIT HYPERBUS 24FBGA
Packaging: Tray
Package / Case: 24-VBGA
Mounting Type: Surface Mount
Memory Size: 512Mbit
Memory Type: Non-Volatile
Operating Temperature: -40°C ~ 105°C (TA)
Voltage - Supply: 1.7V ~ 2V
Technology: FLASH - NOR (SLC)
Clock Frequency: 200 MHz
Memory Format: FLASH
Supplier Device Package: 24-FBGA (6x8)
Write Cycle Time - Word, Page: 1.7ms
Memory Interface: HyperBus
Access Time: 5.45 ns
Memory Organization: 64M x 8
DigiKey Programmable: Not Verified
Description: IC FLASH 512MBIT HYPERBUS 24FBGA
Packaging: Tray
Package / Case: 24-VBGA
Mounting Type: Surface Mount
Memory Size: 512Mbit
Memory Type: Non-Volatile
Operating Temperature: -40°C ~ 105°C (TA)
Voltage - Supply: 1.7V ~ 2V
Technology: FLASH - NOR (SLC)
Clock Frequency: 200 MHz
Memory Format: FLASH
Supplier Device Package: 24-FBGA (6x8)
Write Cycle Time - Word, Page: 1.7ms
Memory Interface: HyperBus
Access Time: 5.45 ns
Memory Organization: 64M x 8
DigiKey Programmable: Not Verified
товару немає в наявності
Мінімальне замовлення: 338 шт
В кошику
од. на суму грн.
| S26HL512TFPBHB000 |
![]() |
Виробник: Infineon Technologies
Description: IC FLASH 512MBIT HYPERBUS 24FBGA
Packaging: Tray
Package / Case: 24-VBGA
Mounting Type: Surface Mount
Memory Size: 512Mbit
Memory Type: Non-Volatile
Operating Temperature: -40°C ~ 105°C (TA)
Voltage - Supply: 2.7V ~ 3.6V
Technology: FLASH - NOR (SLC)
Clock Frequency: 166 MHz
Memory Format: FLASH
Supplier Device Package: 24-FBGA (6x8)
Write Cycle Time - Word, Page: 1.7ms
Memory Interface: HyperBus
Access Time: 6.5 ns
Memory Organization: 64M x 8
DigiKey Programmable: Not Verified
Description: IC FLASH 512MBIT HYPERBUS 24FBGA
Packaging: Tray
Package / Case: 24-VBGA
Mounting Type: Surface Mount
Memory Size: 512Mbit
Memory Type: Non-Volatile
Operating Temperature: -40°C ~ 105°C (TA)
Voltage - Supply: 2.7V ~ 3.6V
Technology: FLASH - NOR (SLC)
Clock Frequency: 166 MHz
Memory Format: FLASH
Supplier Device Package: 24-FBGA (6x8)
Write Cycle Time - Word, Page: 1.7ms
Memory Interface: HyperBus
Access Time: 6.5 ns
Memory Organization: 64M x 8
DigiKey Programmable: Not Verified
товару немає в наявності
Мінімальне замовлення: 676 шт
В кошику
од. на суму грн.
| S26HL512TFPBHM003 |
![]() |
Виробник: Infineon Technologies
Description: IC FLASH 512MBIT HYPERBUS 24FBGA
Packaging: Tape & Reel (TR)
Package / Case: 24-VBGA
Mounting Type: Surface Mount
Memory Size: 512Mbit
Memory Type: Non-Volatile
Operating Temperature: -40°C ~ 125°C (TA)
Voltage - Supply: 2.7V ~ 3.6V
Technology: FLASH - NOR (SLC)
Clock Frequency: 166 MHz
Memory Format: FLASH
Supplier Device Package: 24-FBGA (6x8)
Write Cycle Time - Word, Page: 1.7ms
Memory Interface: HyperBus
Access Time: 6.5 ns
Memory Organization: 64M x 8
DigiKey Programmable: Not Verified
Description: IC FLASH 512MBIT HYPERBUS 24FBGA
Packaging: Tape & Reel (TR)
Package / Case: 24-VBGA
Mounting Type: Surface Mount
Memory Size: 512Mbit
Memory Type: Non-Volatile
Operating Temperature: -40°C ~ 125°C (TA)
Voltage - Supply: 2.7V ~ 3.6V
Technology: FLASH - NOR (SLC)
Clock Frequency: 166 MHz
Memory Format: FLASH
Supplier Device Package: 24-FBGA (6x8)
Write Cycle Time - Word, Page: 1.7ms
Memory Interface: HyperBus
Access Time: 6.5 ns
Memory Organization: 64M x 8
DigiKey Programmable: Not Verified
товару немає в наявності
Мінімальне замовлення: 2500 шт
В кошику
од. на суму грн.
| S26HL512TFPBHM013 |
![]() |
Виробник: Infineon Technologies
Description: IC FLASH 512MBIT HYPERBUS 24FBGA
Packaging: Tape & Reel (TR)
Package / Case: 24-VBGA
Mounting Type: Surface Mount
Memory Size: 512Mbit
Memory Type: Non-Volatile
Operating Temperature: -40°C ~ 125°C (TA)
Voltage - Supply: 2.7V ~ 3.6V
Technology: FLASH - NOR (SLC)
Clock Frequency: 166 MHz
Memory Format: FLASH
Supplier Device Package: 24-FBGA (6x8)
Write Cycle Time - Word, Page: 1.7ms
Memory Interface: HyperBus
Access Time: 6.5 ns
Memory Organization: 64M x 8
DigiKey Programmable: Not Verified
Description: IC FLASH 512MBIT HYPERBUS 24FBGA
Packaging: Tape & Reel (TR)
Package / Case: 24-VBGA
Mounting Type: Surface Mount
Memory Size: 512Mbit
Memory Type: Non-Volatile
Operating Temperature: -40°C ~ 125°C (TA)
Voltage - Supply: 2.7V ~ 3.6V
Technology: FLASH - NOR (SLC)
Clock Frequency: 166 MHz
Memory Format: FLASH
Supplier Device Package: 24-FBGA (6x8)
Write Cycle Time - Word, Page: 1.7ms
Memory Interface: HyperBus
Access Time: 6.5 ns
Memory Organization: 64M x 8
DigiKey Programmable: Not Verified
товару немає в наявності
Мінімальне замовлення: 2500 шт
В кошику
од. на суму грн.
| S28HL512TFPBHM013 |
![]() |
Виробник: Infineon Technologies
Description: IC FLASH 512MBIT SPI/OCTL 24FBGA
Packaging: Tape & Reel (TR)
Package / Case: 24-VBGA
Mounting Type: Surface Mount
Memory Size: 512Mbit
Memory Type: Non-Volatile
Operating Temperature: -40°C ~ 125°C (TA)
Voltage - Supply: 2.7V ~ 3.6V
Technology: FLASH - NOR (SLC)
Clock Frequency: 166 MHz
Memory Format: FLASH
Supplier Device Package: 24-FBGA (6x8)
Write Cycle Time - Word, Page: 1.7ms
Memory Interface: SPI - Octal I/O
Access Time: 6.5 ns
Memory Organization: 64M x 8
DigiKey Programmable: Not Verified
Description: IC FLASH 512MBIT SPI/OCTL 24FBGA
Packaging: Tape & Reel (TR)
Package / Case: 24-VBGA
Mounting Type: Surface Mount
Memory Size: 512Mbit
Memory Type: Non-Volatile
Operating Temperature: -40°C ~ 125°C (TA)
Voltage - Supply: 2.7V ~ 3.6V
Technology: FLASH - NOR (SLC)
Clock Frequency: 166 MHz
Memory Format: FLASH
Supplier Device Package: 24-FBGA (6x8)
Write Cycle Time - Word, Page: 1.7ms
Memory Interface: SPI - Octal I/O
Access Time: 6.5 ns
Memory Organization: 64M x 8
DigiKey Programmable: Not Verified
товару немає в наявності
Мінімальне замовлення: 2500 шт
В кошику
од. на суму грн.
| S28HL512TFPBHB010 |
![]() |
Виробник: Infineon Technologies
Description: IC FLASH 512MBIT SPI/OCTL 24FBGA
Packaging: Tray
Package / Case: 24-VBGA
Mounting Type: Surface Mount
Memory Size: 512Mbit
Memory Type: Non-Volatile
Operating Temperature: -40°C ~ 105°C (TA)
Voltage - Supply: 2.7V ~ 3.6V
Technology: FLASH - NOR (SLC)
Clock Frequency: 166 MHz
Memory Format: FLASH
Supplier Device Package: 24-FBGA (6x8)
Write Cycle Time - Word, Page: 1.7ms
Memory Interface: SPI - Octal I/O
Access Time: 6.5 ns
Memory Organization: 64M x 8
DigiKey Programmable: Not Verified
Description: IC FLASH 512MBIT SPI/OCTL 24FBGA
Packaging: Tray
Package / Case: 24-VBGA
Mounting Type: Surface Mount
Memory Size: 512Mbit
Memory Type: Non-Volatile
Operating Temperature: -40°C ~ 105°C (TA)
Voltage - Supply: 2.7V ~ 3.6V
Technology: FLASH - NOR (SLC)
Clock Frequency: 166 MHz
Memory Format: FLASH
Supplier Device Package: 24-FBGA (6x8)
Write Cycle Time - Word, Page: 1.7ms
Memory Interface: SPI - Octal I/O
Access Time: 6.5 ns
Memory Organization: 64M x 8
DigiKey Programmable: Not Verified
товару немає в наявності
Мінімальне замовлення: 338 шт
В кошику
од. на суму грн.
| S26HL512TFPBHB010 |
![]() |
Виробник: Infineon Technologies
Description: IC FLASH 512MBIT HYPERBUS 24FBGA
Packaging: Tray
Package / Case: 24-VBGA
Mounting Type: Surface Mount
Memory Size: 512Mbit
Memory Type: Non-Volatile
Operating Temperature: -40°C ~ 105°C (TA)
Voltage - Supply: 2.7V ~ 3.6V
Technology: FLASH - NOR (SLC)
Clock Frequency: 166 MHz
Memory Format: FLASH
Supplier Device Package: 24-FBGA (6x8)
Write Cycle Time - Word, Page: 1.7ms
Memory Interface: HyperBus
Access Time: 6.5 ns
Memory Organization: 64M x 8
DigiKey Programmable: Not Verified
Description: IC FLASH 512MBIT HYPERBUS 24FBGA
Packaging: Tray
Package / Case: 24-VBGA
Mounting Type: Surface Mount
Memory Size: 512Mbit
Memory Type: Non-Volatile
Operating Temperature: -40°C ~ 105°C (TA)
Voltage - Supply: 2.7V ~ 3.6V
Technology: FLASH - NOR (SLC)
Clock Frequency: 166 MHz
Memory Format: FLASH
Supplier Device Package: 24-FBGA (6x8)
Write Cycle Time - Word, Page: 1.7ms
Memory Interface: HyperBus
Access Time: 6.5 ns
Memory Organization: 64M x 8
DigiKey Programmable: Not Verified
товару немає в наявності
Мінімальне замовлення: 338 шт
В кошику
од. на суму грн.
| S28HL512TFPBHM010 |
![]() |
Виробник: Infineon Technologies
Description: IC FLASH 512MBIT SPI/OCTL 24FBGA
Packaging: Tray
Package / Case: 24-VBGA
Mounting Type: Surface Mount
Memory Size: 512Mbit
Memory Type: Non-Volatile
Operating Temperature: -40°C ~ 125°C (TA)
Voltage - Supply: 2.7V ~ 3.6V
Technology: FLASH - NOR (SLC)
Clock Frequency: 166 MHz
Memory Format: FLASH
Supplier Device Package: 24-FBGA (6x8)
Write Cycle Time - Word, Page: 1.7ms
Memory Interface: SPI - Octal I/O
Access Time: 6.5 ns
Memory Organization: 64M x 8
DigiKey Programmable: Not Verified
Description: IC FLASH 512MBIT SPI/OCTL 24FBGA
Packaging: Tray
Package / Case: 24-VBGA
Mounting Type: Surface Mount
Memory Size: 512Mbit
Memory Type: Non-Volatile
Operating Temperature: -40°C ~ 125°C (TA)
Voltage - Supply: 2.7V ~ 3.6V
Technology: FLASH - NOR (SLC)
Clock Frequency: 166 MHz
Memory Format: FLASH
Supplier Device Package: 24-FBGA (6x8)
Write Cycle Time - Word, Page: 1.7ms
Memory Interface: SPI - Octal I/O
Access Time: 6.5 ns
Memory Organization: 64M x 8
DigiKey Programmable: Not Verified
товару немає в наявності
Мінімальне замовлення: 338 шт
В кошику
од. на суму грн.
| S26HL512TFPBHM000 |
![]() |
Виробник: Infineon Technologies
Description: IC FLASH 512MBIT HYPERBUS 24FBGA
Packaging: Tray
Package / Case: 24-VBGA
Mounting Type: Surface Mount
Memory Size: 512Mbit
Memory Type: Non-Volatile
Operating Temperature: -40°C ~ 125°C (TA)
Voltage - Supply: 2.7V ~ 3.6V
Technology: FLASH - NOR (SLC)
Clock Frequency: 166 MHz
Memory Format: FLASH
Supplier Device Package: 24-FBGA (6x8)
Write Cycle Time - Word, Page: 1.7ms
Memory Interface: HyperBus
Access Time: 6.5 ns
Memory Organization: 64M x 8
DigiKey Programmable: Not Verified
Description: IC FLASH 512MBIT HYPERBUS 24FBGA
Packaging: Tray
Package / Case: 24-VBGA
Mounting Type: Surface Mount
Memory Size: 512Mbit
Memory Type: Non-Volatile
Operating Temperature: -40°C ~ 125°C (TA)
Voltage - Supply: 2.7V ~ 3.6V
Technology: FLASH - NOR (SLC)
Clock Frequency: 166 MHz
Memory Format: FLASH
Supplier Device Package: 24-FBGA (6x8)
Write Cycle Time - Word, Page: 1.7ms
Memory Interface: HyperBus
Access Time: 6.5 ns
Memory Organization: 64M x 8
DigiKey Programmable: Not Verified
товару немає в наявності
Мінімальне замовлення: 338 шт
В кошику
од. на суму грн.
| S26HL512TFPBHM010 |
![]() |
Виробник: Infineon Technologies
Description: IC FLASH 512MBIT HYPERBUS 24FBGA
Packaging: Tray
Package / Case: 24-VBGA
Mounting Type: Surface Mount
Memory Size: 512Mbit
Memory Type: Non-Volatile
Operating Temperature: -40°C ~ 125°C (TA)
Voltage - Supply: 2.7V ~ 3.6V
Technology: FLASH - NOR (SLC)
Clock Frequency: 166 MHz
Memory Format: FLASH
Supplier Device Package: 24-FBGA (6x8)
Write Cycle Time - Word, Page: 1.7ms
Memory Interface: HyperBus
Access Time: 6.5 ns
Memory Organization: 64M x 8
DigiKey Programmable: Not Verified
Description: IC FLASH 512MBIT HYPERBUS 24FBGA
Packaging: Tray
Package / Case: 24-VBGA
Mounting Type: Surface Mount
Memory Size: 512Mbit
Memory Type: Non-Volatile
Operating Temperature: -40°C ~ 125°C (TA)
Voltage - Supply: 2.7V ~ 3.6V
Technology: FLASH - NOR (SLC)
Clock Frequency: 166 MHz
Memory Format: FLASH
Supplier Device Package: 24-FBGA (6x8)
Write Cycle Time - Word, Page: 1.7ms
Memory Interface: HyperBus
Access Time: 6.5 ns
Memory Organization: 64M x 8
DigiKey Programmable: Not Verified
товару немає в наявності
Мінімальне замовлення: 338 шт
В кошику
од. на суму грн.
| S28HL01GTFPBHI033 |
![]() |
Виробник: Infineon Technologies
Description: IC FLASH 1GBIT SPI/OCTAL 24FBGA
Packaging: Tape & Reel (TR)
Package / Case: 24-VBGA
Mounting Type: Surface Mount
Memory Size: 1Gbit
Memory Type: Non-Volatile
Operating Temperature: -40°C ~ 85°C (TA)
Voltage - Supply: 2.7V ~ 3.6V
Technology: FLASH - NOR (SLC)
Clock Frequency: 166 MHz
Memory Format: FLASH
Supplier Device Package: 24-FBGA (8x8)
Write Cycle Time - Word, Page: 1.7ms
Memory Interface: SPI - Octal I/O
Access Time: 6.5 ns
Memory Organization: 128M x 8
DigiKey Programmable: Not Verified
Description: IC FLASH 1GBIT SPI/OCTAL 24FBGA
Packaging: Tape & Reel (TR)
Package / Case: 24-VBGA
Mounting Type: Surface Mount
Memory Size: 1Gbit
Memory Type: Non-Volatile
Operating Temperature: -40°C ~ 85°C (TA)
Voltage - Supply: 2.7V ~ 3.6V
Technology: FLASH - NOR (SLC)
Clock Frequency: 166 MHz
Memory Format: FLASH
Supplier Device Package: 24-FBGA (8x8)
Write Cycle Time - Word, Page: 1.7ms
Memory Interface: SPI - Octal I/O
Access Time: 6.5 ns
Memory Organization: 128M x 8
DigiKey Programmable: Not Verified
товару немає в наявності
Мінімальне замовлення: 2500 шт
В кошику
од. на суму грн.
| EVALISO2H823V25BTOBO1 |
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Виробник: Infineon Technologies
Description: EVAL BOARD FOR ISO2H823V2.5
Embedded: No
Secondary Attributes: On-Board LEDs
Primary Attributes: 8-Channel (Octal)
Utilized IC / Part: ISO2H823V2.5
Contents: Board(s)
Type: Power Management
Function: Power Distribution Switch (Load Switch)
Packaging: Bulk
Description: EVAL BOARD FOR ISO2H823V2.5
Embedded: No
Secondary Attributes: On-Board LEDs
Primary Attributes: 8-Channel (Octal)
Utilized IC / Part: ISO2H823V2.5
Contents: Board(s)
Type: Power Management
Function: Power Distribution Switch (Load Switch)
Packaging: Bulk
на замовлення 2 шт:
термін постачання 21-31 дні (днів)
| Кількість | Ціна без ПДВ |
|---|---|
| 1+ | 4131.81 грн |
| ICE5QR1680BG1XUMA1 |
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Виробник: Infineon Technologies
Description: ICE5QR1680BG1XUMA1
Packaging: Tape & Reel (TR)
Package / Case: 16-SOIC (0.154", 3.90mm Width), 12 Leads
Mounting Type: Surface Mount
Operating Temperature: -40°C ~ 150°C (TJ)
Internal Switch(s): Yes
Voltage - Breakdown: 800V
Output Isolation: Isolated
Topology: Flyback
Voltage - Supply (Vcc/Vdd): 10V ~ 32V
Supplier Device Package: PG-DSO-12-24
Fault Protection: Current Limiting, Open Loop, Over Load, Over Temperature, Over Voltage, Short Circuit
Voltage - Start Up: 16 V
Control Features: Soft Start
Power (Watts): 50 W
Description: ICE5QR1680BG1XUMA1
Packaging: Tape & Reel (TR)
Package / Case: 16-SOIC (0.154", 3.90mm Width), 12 Leads
Mounting Type: Surface Mount
Operating Temperature: -40°C ~ 150°C (TJ)
Internal Switch(s): Yes
Voltage - Breakdown: 800V
Output Isolation: Isolated
Topology: Flyback
Voltage - Supply (Vcc/Vdd): 10V ~ 32V
Supplier Device Package: PG-DSO-12-24
Fault Protection: Current Limiting, Open Loop, Over Load, Over Temperature, Over Voltage, Short Circuit
Voltage - Start Up: 16 V
Control Features: Soft Start
Power (Watts): 50 W
товару немає в наявності
Мінімальне замовлення: 2500 шт
В кошику
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| ICE5QR1680BG1XUMA1 |
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Виробник: Infineon Technologies
Description: ICE5QR1680BG1XUMA1
Packaging: Cut Tape (CT)
Package / Case: 16-SOIC (0.154", 3.90mm Width), 12 Leads
Mounting Type: Surface Mount
Operating Temperature: -40°C ~ 150°C (TJ)
Internal Switch(s): Yes
Voltage - Breakdown: 800V
Output Isolation: Isolated
Topology: Flyback
Voltage - Supply (Vcc/Vdd): 10V ~ 32V
Supplier Device Package: PG-DSO-12-24
Fault Protection: Current Limiting, Open Loop, Over Load, Over Temperature, Over Voltage, Short Circuit
Voltage - Start Up: 16 V
Control Features: Soft Start
Power (Watts): 50 W
Description: ICE5QR1680BG1XUMA1
Packaging: Cut Tape (CT)
Package / Case: 16-SOIC (0.154", 3.90mm Width), 12 Leads
Mounting Type: Surface Mount
Operating Temperature: -40°C ~ 150°C (TJ)
Internal Switch(s): Yes
Voltage - Breakdown: 800V
Output Isolation: Isolated
Topology: Flyback
Voltage - Supply (Vcc/Vdd): 10V ~ 32V
Supplier Device Package: PG-DSO-12-24
Fault Protection: Current Limiting, Open Loop, Over Load, Over Temperature, Over Voltage, Short Circuit
Voltage - Start Up: 16 V
Control Features: Soft Start
Power (Watts): 50 W
на замовлення 250 шт:
термін постачання 21-31 дні (днів)
| Кількість | Ціна без ПДВ |
|---|---|
| 3+ | 129.41 грн |
| 10+ | 91.41 грн |
| 25+ | 83.19 грн |
| 100+ | 69.62 грн |
| 250+ | 65.59 грн |
| REF5QR1680BG127W1TOBO1 |
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Виробник: Infineon Technologies
Description: REF5QR1680BG127W1TOBO1
Packaging: Box
Voltage - Output: 5V, 12V
Voltage - Input: 85 ~ 300 VAC
Current - Output: 2.17A, 200mA
Contents: Board(s)
Regulator Topology: Flyback
Utilized IC / Part: ICE5QR1680BG-1
Main Purpose: AC/DC Converter
Outputs and Type: 2 Non-Isolated Outputs
Power - Output: 27W
Description: REF5QR1680BG127W1TOBO1
Packaging: Box
Voltage - Output: 5V, 12V
Voltage - Input: 85 ~ 300 VAC
Current - Output: 2.17A, 200mA
Contents: Board(s)
Regulator Topology: Flyback
Utilized IC / Part: ICE5QR1680BG-1
Main Purpose: AC/DC Converter
Outputs and Type: 2 Non-Isolated Outputs
Power - Output: 27W
на замовлення 5 шт:
термін постачання 21-31 дні (днів)
| Кількість | Ціна без ПДВ |
|---|---|
| 1+ | 8747.93 грн |
| EVAL2EP130RPRSICTOBO1 |
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Виробник: Infineon Technologies
Description: EVAL BOARD FOR 2EP130R
Packaging: Box
Function: Gate Driver
Type: Power Management
Contents: Board(s)
Utilized IC / Part: 2EP130R
Description: EVAL BOARD FOR 2EP130R
Packaging: Box
Function: Gate Driver
Type: Power Management
Contents: Board(s)
Utilized IC / Part: 2EP130R
на замовлення 5 шт:
термін постачання 21-31 дні (днів)
| Кількість | Ціна без ПДВ |
|---|---|
| 1+ | 5903.25 грн |
| IGLD65R080D2AUMA1 |
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Виробник: Infineon Technologies
Description: GANFET N-CH 650V 18A 8LDFN
Packaging: Tape & Reel (TR)
Package / Case: 8-LDFN Exposed Pad
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: GaNFET (Gallium Nitride)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 18A (Tc)
Rds On (Max) @ Id, Vgs: 100mOhm @ 5.5A
Power Dissipation (Max): 68W (Tc)
Vgs(th) (Max) @ Id: 1.6V @ 1.8mA
Supplier Device Package: PG-LSON-8-2
Vgs (Max): -10V
Drain to Source Voltage (Vdss): 650 V
Gate Charge (Qg) (Max) @ Vgs: 3.3 nC @ 3 V
Input Capacitance (Ciss) (Max) @ Vds: 240 pF @ 400 V
Description: GANFET N-CH 650V 18A 8LDFN
Packaging: Tape & Reel (TR)
Package / Case: 8-LDFN Exposed Pad
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: GaNFET (Gallium Nitride)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 18A (Tc)
Rds On (Max) @ Id, Vgs: 100mOhm @ 5.5A
Power Dissipation (Max): 68W (Tc)
Vgs(th) (Max) @ Id: 1.6V @ 1.8mA
Supplier Device Package: PG-LSON-8-2
Vgs (Max): -10V
Drain to Source Voltage (Vdss): 650 V
Gate Charge (Qg) (Max) @ Vgs: 3.3 nC @ 3 V
Input Capacitance (Ciss) (Max) @ Vds: 240 pF @ 400 V
товару немає в наявності
Мінімальне замовлення: 3000 шт
В кошику
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| IGLD65R080D2AUMA1 |
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Виробник: Infineon Technologies
Description: GANFET N-CH 650V 18A 8LDFN
Packaging: Cut Tape (CT)
Package / Case: 8-LDFN Exposed Pad
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: GaNFET (Gallium Nitride)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 18A (Tc)
Rds On (Max) @ Id, Vgs: 100mOhm @ 5.5A
Power Dissipation (Max): 68W (Tc)
Vgs(th) (Max) @ Id: 1.6V @ 1.8mA
Supplier Device Package: PG-LSON-8-2
Vgs (Max): -10V
Drain to Source Voltage (Vdss): 650 V
Gate Charge (Qg) (Max) @ Vgs: 3.3 nC @ 3 V
Input Capacitance (Ciss) (Max) @ Vds: 240 pF @ 400 V
Description: GANFET N-CH 650V 18A 8LDFN
Packaging: Cut Tape (CT)
Package / Case: 8-LDFN Exposed Pad
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: GaNFET (Gallium Nitride)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 18A (Tc)
Rds On (Max) @ Id, Vgs: 100mOhm @ 5.5A
Power Dissipation (Max): 68W (Tc)
Vgs(th) (Max) @ Id: 1.6V @ 1.8mA
Supplier Device Package: PG-LSON-8-2
Vgs (Max): -10V
Drain to Source Voltage (Vdss): 650 V
Gate Charge (Qg) (Max) @ Vgs: 3.3 nC @ 3 V
Input Capacitance (Ciss) (Max) @ Vds: 240 pF @ 400 V
на замовлення 2102 шт:
термін постачання 21-31 дні (днів)
| Кількість | Ціна без ПДВ |
|---|---|
| 1+ | 400.63 грн |
| 10+ | 257.37 грн |
| 100+ | 184.83 грн |
| 500+ | 158.19 грн |
| AUIRB24427STR |
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Виробник: Infineon Technologies
Description: IC GATE DRVR LOW-SIDE 8SOIC
Packaging: Bulk
Package / Case: 8-SOIC (0.154", 3.90mm Width)
Mounting Type: Surface Mount
Operating Temperature: -40°C ~ 150°C (TJ)
Voltage - Supply: 5V ~ 20V
Input Type: Non-Inverting
Supplier Device Package: PG-DSO-8-9
Rise / Fall Time (Typ): 33ns, 33ns (Max)
Channel Type: Independent
Driven Configuration: Low-Side
Number of Drivers: 2
Gate Type: MOSFET (N-Channel)
Logic Voltage - VIL, VIH: 0.8V, 2.5V
Current - Peak Output (Source, Sink): 6A, 6A
DigiKey Programmable: Not Verified
Description: IC GATE DRVR LOW-SIDE 8SOIC
Packaging: Bulk
Package / Case: 8-SOIC (0.154", 3.90mm Width)
Mounting Type: Surface Mount
Operating Temperature: -40°C ~ 150°C (TJ)
Voltage - Supply: 5V ~ 20V
Input Type: Non-Inverting
Supplier Device Package: PG-DSO-8-9
Rise / Fall Time (Typ): 33ns, 33ns (Max)
Channel Type: Independent
Driven Configuration: Low-Side
Number of Drivers: 2
Gate Type: MOSFET (N-Channel)
Logic Voltage - VIL, VIH: 0.8V, 2.5V
Current - Peak Output (Source, Sink): 6A, 6A
DigiKey Programmable: Not Verified
на замовлення 6992 шт:
термін постачання 21-31 дні (днів)
| Кількість | Ціна без ПДВ |
|---|---|
| 135+ | 149.25 грн |
| IKQ40N120CT2XKSA1 |
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Виробник: Infineon Technologies
Description: IGBT TRENCH FS 1200V 80A TO247-3
Packaging: Bulk
Package / Case: TO-247-3
Mounting Type: Through Hole
Operating Temperature: -40°C ~ 175°C (TJ)
Input Type: Standard
Vce(on) (Max) @ Vge, Ic: 2.15V @ 15V, 40A
Supplier Device Package: PG-TO247-3-46
IGBT Type: Trench Field Stop
Td (on/off) @ 25°C: 32ns/328ns
Switching Energy: 3.1mJ (on), 2.9mJ (off)
Test Condition: 600V, 40A, 12Ohm, 15V
Gate Charge: 190 nC
Current - Collector (Ic) (Max): 80 A
Voltage - Collector Emitter Breakdown (Max): 1200 V
Current - Collector Pulsed (Icm): 160 A
Power - Max: 500 W
Description: IGBT TRENCH FS 1200V 80A TO247-3
Packaging: Bulk
Package / Case: TO-247-3
Mounting Type: Through Hole
Operating Temperature: -40°C ~ 175°C (TJ)
Input Type: Standard
Vce(on) (Max) @ Vge, Ic: 2.15V @ 15V, 40A
Supplier Device Package: PG-TO247-3-46
IGBT Type: Trench Field Stop
Td (on/off) @ 25°C: 32ns/328ns
Switching Energy: 3.1mJ (on), 2.9mJ (off)
Test Condition: 600V, 40A, 12Ohm, 15V
Gate Charge: 190 nC
Current - Collector (Ic) (Max): 80 A
Voltage - Collector Emitter Breakdown (Max): 1200 V
Current - Collector Pulsed (Icm): 160 A
Power - Max: 500 W
на замовлення 1608 шт:
термін постачання 21-31 дні (днів)
| Кількість | Ціна без ПДВ |
|---|---|
| 60+ | 337.56 грн |
| FF300R12ME4PB11BPSA1 |
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Виробник: Infineon Technologies
Description: IGBT MOD 1200V 600A 20MW
Input Capacitance (Cies) @ Vce: 18.5 nF @ 25 V
Current - Collector Cutoff (Max): 3 mA
Voltage - Collector Emitter Breakdown (Max): 1200 V
Current - Collector (Ic) (Max): 600 A
IGBT Type: Trench Field Stop
Supplier Device Package: Module
NTC Thermistor: Yes
Vce(on) (Max) @ Vge, Ic: 2.1V @ 15V, 300A
Operating Temperature: -40°C ~ 150°C
Configuration: Half Bridge
Input: Standard
Mounting Type: Chassis Mount
Package / Case: Module
Packaging: Tray
Description: IGBT MOD 1200V 600A 20MW
Input Capacitance (Cies) @ Vce: 18.5 nF @ 25 V
Current - Collector Cutoff (Max): 3 mA
Voltage - Collector Emitter Breakdown (Max): 1200 V
Current - Collector (Ic) (Max): 600 A
IGBT Type: Trench Field Stop
Supplier Device Package: Module
NTC Thermistor: Yes
Vce(on) (Max) @ Vge, Ic: 2.1V @ 15V, 300A
Operating Temperature: -40°C ~ 150°C
Configuration: Half Bridge
Input: Standard
Mounting Type: Chassis Mount
Package / Case: Module
Packaging: Tray
товару немає в наявності
Мінімальне замовлення: 6 шт
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| NBT2000A8K0T4USON8XTMA5 |
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Виробник: Infineon Technologies
Description: NBT2000A8K0T4USON8XTMA5
Packaging: Tape & Reel (TR)
Package / Case: 8-UDFN Exposed Pad
Mounting Type: Surface Mount
Frequency: 13.56MHz
Interface: I2C
Type: RFID Reader
Operating Temperature: -40°C ~ 105°C (TA)
Standards: ISO 14443-B
Supplier Device Package: PG-USON-8-8
Description: NBT2000A8K0T4USON8XTMA5
Packaging: Tape & Reel (TR)
Package / Case: 8-UDFN Exposed Pad
Mounting Type: Surface Mount
Frequency: 13.56MHz
Interface: I2C
Type: RFID Reader
Operating Temperature: -40°C ~ 105°C (TA)
Standards: ISO 14443-B
Supplier Device Package: PG-USON-8-8
товару немає в наявності
Мінімальне замовлення: 5000 шт
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| NBT2000A8K0T4USON8XTMA5 |
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Виробник: Infineon Technologies
Description: NBT2000A8K0T4USON8XTMA5
Packaging: Cut Tape (CT)
Package / Case: 8-UDFN Exposed Pad
Mounting Type: Surface Mount
Frequency: 13.56MHz
Interface: I2C
Type: RFID Reader
Operating Temperature: -40°C ~ 105°C (TA)
Standards: ISO 14443-B
Supplier Device Package: PG-USON-8-8
Description: NBT2000A8K0T4USON8XTMA5
Packaging: Cut Tape (CT)
Package / Case: 8-UDFN Exposed Pad
Mounting Type: Surface Mount
Frequency: 13.56MHz
Interface: I2C
Type: RFID Reader
Operating Temperature: -40°C ~ 105°C (TA)
Standards: ISO 14443-B
Supplier Device Package: PG-USON-8-8
на замовлення 102 шт:
термін постачання 21-31 дні (днів)
| Кількість | Ціна без ПДВ |
|---|---|
| 4+ | 88.34 грн |
| 10+ | 72.83 грн |
| 25+ | 68.71 грн |
| 100+ | 59.16 грн |
| ESD175B1W01005E6327XTSA1 |
товару немає в наявності
Мінімальне замовлення: 15000 шт
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| CY6264-70SNC |
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Виробник: Infineon Technologies
Description: IC SRAM 64KBIT PARALLEL 28SOIC
Packaging: Tube
Package / Case: 28-SOIC (0.295", 7.50mm Width)
Mounting Type: Surface Mount
Memory Size: 64Kbit
Memory Type: Volatile
Operating Temperature: 0°C ~ 70°C (TA)
Voltage - Supply: 4.5V ~ 5.5V
Technology: SRAM - Asynchronous
Memory Format: SRAM
Supplier Device Package: 28-SOIC
Write Cycle Time - Word, Page: 70ns
Memory Interface: Parallel
Access Time: 70 ns
Memory Organization: 8K x 8
DigiKey Programmable: Not Verified
Description: IC SRAM 64KBIT PARALLEL 28SOIC
Packaging: Tube
Package / Case: 28-SOIC (0.295", 7.50mm Width)
Mounting Type: Surface Mount
Memory Size: 64Kbit
Memory Type: Volatile
Operating Temperature: 0°C ~ 70°C (TA)
Voltage - Supply: 4.5V ~ 5.5V
Technology: SRAM - Asynchronous
Memory Format: SRAM
Supplier Device Package: 28-SOIC
Write Cycle Time - Word, Page: 70ns
Memory Interface: Parallel
Access Time: 70 ns
Memory Organization: 8K x 8
DigiKey Programmable: Not Verified
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| CY6264-70SNXC |
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Виробник: Infineon Technologies
Description: IC SRAM 64KBIT PARALLEL 28SOIC
Technology: SRAM - Asynchronous
Voltage - Supply: 4.5V ~ 5.5V
Operating Temperature: 0°C ~ 70°C (TA)
Memory Type: Volatile
Memory Size: 64Kbit
Mounting Type: Surface Mount
Package / Case: 28-SOIC (0.295", 7.50mm Width)
Packaging: Tube
DigiKey Programmable: Not Verified
Memory Organization: 8K x 8
Access Time: 70 ns
Memory Interface: Parallel
Write Cycle Time - Word, Page: 70ns
Supplier Device Package: 28-SOIC
Memory Format: SRAM
Description: IC SRAM 64KBIT PARALLEL 28SOIC
Technology: SRAM - Asynchronous
Voltage - Supply: 4.5V ~ 5.5V
Operating Temperature: 0°C ~ 70°C (TA)
Memory Type: Volatile
Memory Size: 64Kbit
Mounting Type: Surface Mount
Package / Case: 28-SOIC (0.295", 7.50mm Width)
Packaging: Tube
DigiKey Programmable: Not Verified
Memory Organization: 8K x 8
Access Time: 70 ns
Memory Interface: Parallel
Write Cycle Time - Word, Page: 70ns
Supplier Device Package: 28-SOIC
Memory Format: SRAM
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| IRF540ZLPBF |
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Виробник: Infineon Technologies
Description: MOSFET N-CH 100V 36A TO262
Packaging: Tube
Package / Case: TO-262-3 Long Leads, I2PAK, TO-262AA
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 36A (Tc)
Rds On (Max) @ Id, Vgs: 26.5mOhm @ 22A, 10V
Power Dissipation (Max): 92W (Tc)
Vgs(th) (Max) @ Id: 4V @ 250µA
Supplier Device Package: TO-262
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 100 V
Gate Charge (Qg) (Max) @ Vgs: 63 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 1770 pF @ 25 V
Description: MOSFET N-CH 100V 36A TO262
Packaging: Tube
Package / Case: TO-262-3 Long Leads, I2PAK, TO-262AA
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 36A (Tc)
Rds On (Max) @ Id, Vgs: 26.5mOhm @ 22A, 10V
Power Dissipation (Max): 92W (Tc)
Vgs(th) (Max) @ Id: 4V @ 250µA
Supplier Device Package: TO-262
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 100 V
Gate Charge (Qg) (Max) @ Vgs: 63 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 1770 pF @ 25 V
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| IRF7311TR |
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Виробник: Infineon Technologies
Description: MOSFET 2N-CH 20V 6.6A 8SO
Supplier Device Package: 8-SO
Vgs(th) (Max) @ Id: 700mV @ 250µA
FET Feature: Logic Level Gate
Gate Charge (Qg) (Max) @ Vgs: 27nC @ 4.5V
Rds On (Max) @ Id, Vgs: 29mOhm @ 6A, 4.5V
Input Capacitance (Ciss) (Max) @ Vds: 900pF @ 15V
Current - Continuous Drain (Id) @ 25°C: 6.6A
Drain to Source Voltage (Vdss): 20V
Power - Max: 2W
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 150°C (TJ)
Configuration: 2 N-Channel (Dual)
Mounting Type: Surface Mount
Package / Case: 8-SOIC (0.154", 3.90mm Width)
Packaging: Tape & Reel (TR)
Description: MOSFET 2N-CH 20V 6.6A 8SO
Supplier Device Package: 8-SO
Vgs(th) (Max) @ Id: 700mV @ 250µA
FET Feature: Logic Level Gate
Gate Charge (Qg) (Max) @ Vgs: 27nC @ 4.5V
Rds On (Max) @ Id, Vgs: 29mOhm @ 6A, 4.5V
Input Capacitance (Ciss) (Max) @ Vds: 900pF @ 15V
Current - Continuous Drain (Id) @ 25°C: 6.6A
Drain to Source Voltage (Vdss): 20V
Power - Max: 2W
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 150°C (TJ)
Configuration: 2 N-Channel (Dual)
Mounting Type: Surface Mount
Package / Case: 8-SOIC (0.154", 3.90mm Width)
Packaging: Tape & Reel (TR)
товару немає в наявності
Мінімальне замовлення: 4000 шт
В кошику
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| CY8C4147AZQT415XQSA1 |
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Виробник: Infineon Technologies
Description: HMI-GROWTH PSOC4
Number of I/O: 53
Supplier Device Package: 64-TQFP (10x10)
Peripherals: Brown-out Detect/Reset, CapSense, DMA, POR, PWM, WDT
Connectivity: I2C, LINbus, SPI, UART/USART
Voltage - Supply (Vcc/Vdd): 1.71V ~ 5.5V
Core Size: 32-Bit
Data Converters: A/D 16x12b SAR
Core Processor: ARM® Cortex®-M0+
Program Memory Type: FLASH
Oscillator Type: Internal
Operating Temperature: -40°C ~ 105°C (TA)
RAM Size: 16K x 8
Program Memory Size: 128KB (128K x 8)
Speed: 48MHz
Mounting Type: Surface Mount
Package / Case: 64-LQFP
Packaging: Tray
Description: HMI-GROWTH PSOC4
Number of I/O: 53
Supplier Device Package: 64-TQFP (10x10)
Peripherals: Brown-out Detect/Reset, CapSense, DMA, POR, PWM, WDT
Connectivity: I2C, LINbus, SPI, UART/USART
Voltage - Supply (Vcc/Vdd): 1.71V ~ 5.5V
Core Size: 32-Bit
Data Converters: A/D 16x12b SAR
Core Processor: ARM® Cortex®-M0+
Program Memory Type: FLASH
Oscillator Type: Internal
Operating Temperature: -40°C ~ 105°C (TA)
RAM Size: 16K x 8
Program Memory Size: 128KB (128K x 8)
Speed: 48MHz
Mounting Type: Surface Mount
Package / Case: 64-LQFP
Packaging: Tray
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Мінімальне замовлення: 160 шт
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| PSC3M5EDLHQ1XQLA1 |
Виробник: Infineon Technologies
Description: INDUSTRIAL-PSOC C3
Number of I/O: 39
Supplier Device Package: 64-VQFN (8x8)
Peripherals: Brown-out Detect/Reset, DMA, I2S, POR, PWM, WDT
Connectivity: CANbus, I2C, IrDA, LINbus, SPI, Smart Card, UART/USART
Voltage - Supply (Vcc/Vdd): 1.71V ~ 3.6V
Core Size: 32-Bit
Data Converters: A/D 18x12b SAR
Core Processor: ARM® Cortex®-M33F
Program Memory Type: FLASH
Oscillator Type: External, Internal
Operating Temperature: -40°C ~ 105°C (TA)
RAM Size: 64K x 8
Program Memory Size: 128KB (128K x 8)
Speed: 199MHz
Mounting Type: Surface Mount
Package / Case: 64-VFQFN Exposed Pad
Packaging: Tray
Description: INDUSTRIAL-PSOC C3
Number of I/O: 39
Supplier Device Package: 64-VQFN (8x8)
Peripherals: Brown-out Detect/Reset, DMA, I2S, POR, PWM, WDT
Connectivity: CANbus, I2C, IrDA, LINbus, SPI, Smart Card, UART/USART
Voltage - Supply (Vcc/Vdd): 1.71V ~ 3.6V
Core Size: 32-Bit
Data Converters: A/D 18x12b SAR
Core Processor: ARM® Cortex®-M33F
Program Memory Type: FLASH
Oscillator Type: External, Internal
Operating Temperature: -40°C ~ 105°C (TA)
RAM Size: 64K x 8
Program Memory Size: 128KB (128K x 8)
Speed: 199MHz
Mounting Type: Surface Mount
Package / Case: 64-VFQFN Exposed Pad
Packaging: Tray
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Мінімальне замовлення: 3480 шт
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| CYT2CL7BXAQ0AZSGSHQLA1 |
товару немає в наявності
Мінімальне замовлення: 600 шт
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| CYT2CL7BXAQ0AZSGSTHUYA1 |
товару немає в наявності
Мінімальне замовлення: 300 шт
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| FS1150R08A8P3CHPSA1 |
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Виробник: Infineon Technologies
Description: IGBT MOD 750V 600A AGHDG2XT-7611
Input Capacitance (Cies) @ Vce: 60800 pF @ 50 V
Current - Collector Cutoff (Max): 1 mA
Power - Max: 1 kW
Voltage - Collector Emitter Breakdown (Max): 750 V
Current - Collector (Ic) (Max): 600 A
Supplier Device Package: AG-HDG2XT-7611
NTC Thermistor: No
Vce(on) (Max) @ Vge, Ic: 1.21V @ 15V, 600A
Operating Temperature: -40°C ~ 175°C (TJ)
Configuration: Three Phase Inverter
Input: Standard
Mounting Type: Chassis Mount
Package / Case: Module
Packaging: Tray
Description: IGBT MOD 750V 600A AGHDG2XT-7611
Input Capacitance (Cies) @ Vce: 60800 pF @ 50 V
Current - Collector Cutoff (Max): 1 mA
Power - Max: 1 kW
Voltage - Collector Emitter Breakdown (Max): 750 V
Current - Collector (Ic) (Max): 600 A
Supplier Device Package: AG-HDG2XT-7611
NTC Thermistor: No
Vce(on) (Max) @ Vge, Ic: 1.21V @ 15V, 600A
Operating Temperature: -40°C ~ 175°C (TJ)
Configuration: Three Phase Inverter
Input: Standard
Mounting Type: Chassis Mount
Package / Case: Module
Packaging: Tray
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| 841000037001 |
Виробник: Infineon Technologies
Description: IC MCU 32BIT 100LQFP
DigiKey Programmable: Not Verified
Packaging: Tray
Description: IC MCU 32BIT 100LQFP
DigiKey Programmable: Not Verified
Packaging: Tray
товару немає в наявності
Мінімальне замовлення: 900 шт
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