Фото | Назва | Виробник | Інформація |
Доступність |
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MWI200-06A8T | IXYS |
Description: IGBT MODULE 600V 225A 675W E3 Packaging: Tube Package / Case: E3 Mounting Type: Chassis Mount Input: Standard Configuration: Three Phase Inverter Vce(on) (Max) @ Vge, Ic: 2.5V @ 15V, 200A NTC Thermistor: No Supplier Device Package: E3 IGBT Type: NPT Part Status: Active Current - Collector (Ic) (Max): 225 A Voltage - Collector Emitter Breakdown (Max): 600 V Power - Max: 675 W Current - Collector Cutoff (Max): 1.8 mA Input Capacitance (Cies) @ Vce: 9 nF @ 25 V |
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MWI451-17E9 | IXYS | Description: IGBT E9PACK |
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MWI75-12A8T | IXYS | Description: IGBT MODULE 1200V 125A 500W |
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MX879RTR | IXYS |
Description: IC PWR DRIVER 1:1 28QFN Packaging: Tape & Reel (TR) Package / Case: 28-VFQFN Exposed Pad Mounting Type: Surface Mount Number of Outputs: 8 Interface: SPI, Parallel Switch Type: General Purpose Operating Temperature: -40°C ~ 85°C (TA) Rds On (Typ): 7Ohm Voltage - Load: 6V ~ 60V Voltage - Supply (Vcc/Vdd): 2.7V ~ 5.5V Current - Output (Max): 150mA Ratio - Input:Output: 1:1 Supplier Device Package: 28-QFN (5x5) |
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VMO1200-01F | IXYS | Description: MOSFET N-CH 100V 1220A Y3-LI |
на замовлення 153 шт: термін постачання 21-31 дні (днів) |
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VMO1600-02P | IXYS | Description: MOSFET N-CH 200V 1900A Y3-LI |
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XOB17-04X3 | IXYS | Description: SENSOR MONOCRYSTALLINE MODULE |
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XOB17-04X3-TR | IXYS | Description: SENSOR MONOCRYSTALLINE MODULE |
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XOB17-12X1 | IXYS | Description: SENSOR MONOCRYSTALLINE MODULE |
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XOB17-12X1-TR | IXYS | Description: SENSOR MONOCRYSTALLINE MODULE |
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XOD17-04B | IXYS | Description: SENSOR MONOCRYSTALLINE MOD 6X6 |
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XOD17-04B-TS | IXYS | Description: SENSOR MONOCRYSTALLINE MOD 6X6 |
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XOD17-12B | IXYS | Description: SENSOR MONOCRYSTALLINE MOD 6X20 |
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XOD17-12B-TS | IXYS | Description: SENSOR MONOCRYSTALLINE MOD 6X20 |
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XOD17-34B | IXYS | Description: SENS MONOCRYSTALLINE MOD 18.5SQ |
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XOD17-34B-TS | IXYS | Description: SENS MONOCRYSTALLINE MOD 18.5SQ |
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XOD17-68B | IXYS | Description: MONOCRYST SOLAR CELL 112MW 630MV |
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IXTQ30N50L2 | IXYS | Description: MOSFET N-CH 500V 30A TO3P |
на замовлення 960 шт: термін постачання 21-31 дні (днів) |
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IXFK210N17T | IXYS | Description: MOSFET N-CH 170V 210A TO264AA |
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IXFX210N17T | IXYS | Description: MOSFET N-CH 170V 210A PLUS247-3 |
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IXFN260N17T | IXYS | Description: MOSFET N-CH 170V 245A SOT-227 |
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IXFK260N17T | IXYS | Description: MOSFET N-CH 170V 260A TO-264 |
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IXFX260N17T | IXYS | Description: MOSFET N-CH 170V 260A PLUS247 |
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IXFK170N20T | IXYS |
Description: MOSFET N-CH 200V 170A TO264AA Packaging: Tube Package / Case: TO-264-3, TO-264AA Mounting Type: Through Hole Operating Temperature: -55°C ~ 175°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 170A (Tc) Rds On (Max) @ Id, Vgs: 11mOhm @ 60A, 10V Power Dissipation (Max): 1150W (Tc) Vgs(th) (Max) @ Id: 5V @ 4mA Supplier Device Package: TO-264AA (IXFK) Part Status: Active Drive Voltage (Max Rds On, Min Rds On): 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 200 V Gate Charge (Qg) (Max) @ Vgs: 265 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 19600 pF @ 25 V |
на замовлення 1188 шт: термін постачання 21-31 дні (днів) |
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IXFX170N20T | IXYS |
Description: MOSFET N-CH 200V 170A PLUS247-3 Packaging: Tube Package / Case: TO-247-3 Variant Mounting Type: Through Hole Operating Temperature: -55°C ~ 175°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 170A (Tc) Rds On (Max) @ Id, Vgs: 11mOhm @ 60A, 10V Power Dissipation (Max): 1150W (Tc) Vgs(th) (Max) @ Id: 5V @ 4mA Supplier Device Package: PLUS247™-3 Part Status: Active Drive Voltage (Max Rds On, Min Rds On): 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 200 V Gate Charge (Qg) (Max) @ Vgs: 265 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 19600 pF @ 25 V |
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IXFK230N20T | IXYS |
Description: MOSFET N-CH 200V 230A TO264AA Packaging: Tube Package / Case: TO-264-3, TO-264AA Mounting Type: Through Hole Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 230A (Tc) Rds On (Max) @ Id, Vgs: 7.5mOhm @ 60A, 10V Power Dissipation (Max): 1670W (Tc) Vgs(th) (Max) @ Id: 5V @ 8mA Supplier Device Package: TO-264AA (IXFK) Part Status: Active Drive Voltage (Max Rds On, Min Rds On): 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 200 V Gate Charge (Qg) (Max) @ Vgs: 378 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 28000 pF @ 25 V |
на замовлення 616 шт: термін постачання 21-31 дні (днів) |
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IXFX230N20T | IXYS |
Description: MOSFET N-CH 200V 230A PLUS247-3 Packaging: Tube Package / Case: TO-247-3 Variant Mounting Type: Through Hole Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 230A (Tc) Rds On (Max) @ Id, Vgs: 7.5mOhm @ 60A, 10V Power Dissipation (Max): 1670W (Tc) Vgs(th) (Max) @ Id: 5V @ 8mA Supplier Device Package: PLUS247™-3 Part Status: Active Drive Voltage (Max Rds On, Min Rds On): 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 200 V Gate Charge (Qg) (Max) @ Vgs: 378 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 28000 pF @ 25 V |
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IXFN230N20T | IXYS |
Description: MOSFET N-CH 200V 220A SOT227B Packaging: Tube Package / Case: SOT-227-4, miniBLOC Mounting Type: Chassis Mount Operating Temperature: -55°C ~ 175°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 220A (Tc) Rds On (Max) @ Id, Vgs: 7.5mOhm @ 60A, 10V Power Dissipation (Max): 1090W (Tc) Vgs(th) (Max) @ Id: 5V @ 8mA Supplier Device Package: SOT-227B Part Status: Active Drive Voltage (Max Rds On, Min Rds On): 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 200 V Gate Charge (Qg) (Max) @ Vgs: 378 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 28000 pF @ 25 V |
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IXFN180N25T | IXYS |
Description: MOSFET N-CH 250V 168A SOT227B Packaging: Tube Package / Case: SOT-227-4, miniBLOC Mounting Type: Chassis Mount Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 168A (Tc) Rds On (Max) @ Id, Vgs: 12.9mOhm @ 60A, 10V Power Dissipation (Max): 900W (Tc) Vgs(th) (Max) @ Id: 5V @ 8mA Supplier Device Package: SOT-227B Part Status: Active Drive Voltage (Max Rds On, Min Rds On): 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 250 V Gate Charge (Qg) (Max) @ Vgs: 345 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 28000 pF @ 25 V |
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IXFK180N25T | IXYS |
Description: MOSFET N-CH 250V 180A TO264AA Packaging: Tube Package / Case: TO-264-3, TO-264AA Mounting Type: Through Hole Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 180A (Tc) Rds On (Max) @ Id, Vgs: 12.9mOhm @ 60A, 10V Power Dissipation (Max): 1390W (Tc) Vgs(th) (Max) @ Id: 5V @ 8mA Supplier Device Package: TO-264AA (IXFK) Part Status: Active Drive Voltage (Max Rds On, Min Rds On): 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 250 V Gate Charge (Qg) (Max) @ Vgs: 345 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 28000 pF @ 25 V |
на замовлення 232 шт: термін постачання 21-31 дні (днів) |
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IXFX180N25T | IXYS |
Description: MOSFET N-CH 250V 180A PLUS247-3 Packaging: Tube Package / Case: TO-247-3 Variant Mounting Type: Through Hole Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 180A (Tc) Rds On (Max) @ Id, Vgs: 12.9mOhm @ 60A, 10V Power Dissipation (Max): 1390W (Tc) Vgs(th) (Max) @ Id: 5V @ 8mA Supplier Device Package: PLUS247™-3 Drive Voltage (Max Rds On, Min Rds On): 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 250 V Gate Charge (Qg) (Max) @ Vgs: 345 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 28000 pF @ 25 V |
на замовлення 574 шт: термін постачання 21-31 дні (днів) |
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IXFX140N25T | IXYS | Description: MOSFET N-CH 250V 140A PLUS247-3 |
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IXFK120N30T | IXYS |
Description: MOSFET N-CH 300V 120A TO264AA Packaging: Tube Package / Case: TO-264-3, TO-264AA Mounting Type: Through Hole Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 120A (Tc) Rds On (Max) @ Id, Vgs: 24mOhm @ 60A, 10V Power Dissipation (Max): 960W (Tc) Vgs(th) (Max) @ Id: 5V @ 4mA Supplier Device Package: TO-264AA (IXFK) Part Status: Active Drive Voltage (Max Rds On, Min Rds On): 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 300 V Gate Charge (Qg) (Max) @ Vgs: 265 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 20000 pF @ 25 V |
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IXFX120N30T | IXYS |
Description: MOSFET N-CH 300V 120A PLUS247-3 Packaging: Tube Package / Case: TO-247-3 Variant Mounting Type: Through Hole Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 120A (Tc) Rds On (Max) @ Id, Vgs: 24mOhm @ 60A, 10V Power Dissipation (Max): 960W (Tc) Vgs(th) (Max) @ Id: 5V @ 4mA Supplier Device Package: PLUS247™-3 Drive Voltage (Max Rds On, Min Rds On): 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 300 V Gate Charge (Qg) (Max) @ Vgs: 265 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 20000 pF @ 25 V |
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IXFK160N30T | IXYS |
Description: MOSFET N-CH 300V 160A TO264AA Packaging: Tube Package / Case: TO-264-3, TO-264AA Mounting Type: Through Hole Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 160A (Tc) Rds On (Max) @ Id, Vgs: 19mOhm @ 60A, 10V Power Dissipation (Max): 1390W (Tc) Vgs(th) (Max) @ Id: 5V @ 8mA Supplier Device Package: TO-264AA (IXFK) Part Status: Active Drive Voltage (Max Rds On, Min Rds On): 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 300 V Gate Charge (Qg) (Max) @ Vgs: 335 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 28000 pF @ 25 V |
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IXFX160N30T | IXYS |
Description: MOSFET N-CH 300V 160A PLUS247-3 Packaging: Tube Package / Case: TO-247-3 Variant Mounting Type: Through Hole Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 160A (Tc) Rds On (Max) @ Id, Vgs: 19mOhm @ 60A, 10V Power Dissipation (Max): 1390W (Tc) Vgs(th) (Max) @ Id: 5V @ 8mA Supplier Device Package: PLUS247™-3 Part Status: Active Drive Voltage (Max Rds On, Min Rds On): 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 300 V Gate Charge (Qg) (Max) @ Vgs: 335 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 28000 pF @ 25 V |
на замовлення 640 шт: термін постачання 21-31 дні (днів) |
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IXGR60N60C3C1 | IXYS |
Description: IGBT 600V 75A 170W ISOPLUS247 Packaging: Tube Package / Case: TO-247-3 Mounting Type: Through Hole Operating Temperature: -55°C ~ 150°C (TJ) Input Type: Standard Vce(on) (Max) @ Vge, Ic: 2.5V @ 15V, 40A Supplier Device Package: ISOPLUS247™ IGBT Type: PT Td (on/off) @ 25°C: 24ns/70ns Switching Energy: 830µJ (on), 450µJ (off) Test Condition: 480V, 40A, 3Ohm, 15V Gate Charge: 115 nC Part Status: Obsolete Current - Collector (Ic) (Max): 75 A Voltage - Collector Emitter Breakdown (Max): 600 V Current - Collector Pulsed (Icm): 260 A Power - Max: 170 W |
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IXGA30N60C3C1 | IXYS |
Description: IGBT 600V 60A 220W TO263 Packaging: Tube Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB Mounting Type: Surface Mount Operating Temperature: -55°C ~ 150°C (TJ) Input Type: Standard Vce(on) (Max) @ Vge, Ic: 3V @ 15V, 20A Supplier Device Package: TO-263AA IGBT Type: PT Td (on/off) @ 25°C: 17ns/42ns Switching Energy: 120µJ (on), 90µJ (off) Test Condition: 300V, 20A, 5Ohm, 15V Gate Charge: 38 nC Current - Collector (Ic) (Max): 60 A Voltage - Collector Emitter Breakdown (Max): 600 V Current - Collector Pulsed (Icm): 150 A Power - Max: 220 W |
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IXGP30N60C3C1 | IXYS |
Description: IGBT 600V 60A 220W TO220 Packaging: Tube Package / Case: TO-220-3 Mounting Type: Through Hole Operating Temperature: -55°C ~ 150°C (TJ) Input Type: Standard Vce(on) (Max) @ Vge, Ic: 3V @ 15V, 20A Supplier Device Package: TO-220-3 IGBT Type: PT Td (on/off) @ 25°C: 17ns/42ns Switching Energy: 120µJ (on), 90µJ (off) Test Condition: 300V, 20A, 5Ohm, 15V Gate Charge: 38 nC Current - Collector (Ic) (Max): 60 A Voltage - Collector Emitter Breakdown (Max): 600 V Current - Collector Pulsed (Icm): 150 A Power - Max: 220 W |
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IXGH30N60C3C1 | IXYS |
Description: IGBT 600V 60A 220W TO247 Packaging: Tube Package / Case: TO-247-3 Mounting Type: Through Hole Operating Temperature: -55°C ~ 150°C (TJ) Input Type: Standard Vce(on) (Max) @ Vge, Ic: 3V @ 15V, 20A Supplier Device Package: TO-247AD IGBT Type: PT Td (on/off) @ 25°C: 17ns/42ns Switching Energy: 120µJ (on), 90µJ (off) Test Condition: 300V, 20A, 5Ohm, 15V Gate Charge: 38 nC Current - Collector (Ic) (Max): 60 A Voltage - Collector Emitter Breakdown (Max): 600 V Current - Collector Pulsed (Icm): 150 A Power - Max: 220 W |
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IXGH36N60B3C1 | IXYS |
Description: IGBT 600V 75A 250W TO247 Packaging: Tube Package / Case: TO-247-3 Mounting Type: Through Hole Operating Temperature: -55°C ~ 150°C (TJ) Input Type: Standard Vce(on) (Max) @ Vge, Ic: 1.8V @ 15V, 30A Supplier Device Package: TO-247AD IGBT Type: PT Td (on/off) @ 25°C: 20ns/125ns Switching Energy: 390µJ (on), 800µJ (off) Test Condition: 400V, 30A, 5Ohm, 15V Gate Charge: 80 nC Current - Collector (Ic) (Max): 75 A Voltage - Collector Emitter Breakdown (Max): 600 V Current - Collector Pulsed (Icm): 200 A Power - Max: 250 W |
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IXGH48N60B3C1 | IXYS |
Description: IGBT 600V 75A 300W TO247 Packaging: Tube Package / Case: TO-247-3 Mounting Type: Through Hole Operating Temperature: -55°C ~ 150°C (TJ) Input Type: Standard Vce(on) (Max) @ Vge, Ic: 1.8V @ 15V, 32A Supplier Device Package: TO-247AD IGBT Type: PT Td (on/off) @ 25°C: 22ns/130ns Switching Energy: 450µJ (on), 660µJ (off) Test Condition: 480V, 30A, 5Ohm, 15V Gate Charge: 115 nC Part Status: Obsolete Current - Collector (Ic) (Max): 75 A Voltage - Collector Emitter Breakdown (Max): 600 V Current - Collector Pulsed (Icm): 280 A Power - Max: 300 W |
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IXGH48N60C3C1 | IXYS |
Description: IGBT 600V 75A 300W TO247 Packaging: Tube Package / Case: TO-247-3 Mounting Type: Through Hole Operating Temperature: -55°C ~ 150°C (TJ) Input Type: Standard Vce(on) (Max) @ Vge, Ic: 2.5V @ 15V, 30A Supplier Device Package: TO-247AD IGBT Type: PT Td (on/off) @ 25°C: 19ns/60ns Switching Energy: 330µJ (on), 230µJ (off) Test Condition: 400V, 30A, 3Ohm, 15V Gate Charge: 77 nC Part Status: Obsolete Current - Collector (Ic) (Max): 75 A Voltage - Collector Emitter Breakdown (Max): 600 V Current - Collector Pulsed (Icm): 250 A Power - Max: 300 W |
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IXGK100N170 | IXYS |
Description: IGBT PT 1000V 120A TO-264 Packaging: Tube Package / Case: TO-264-3, TO-264AA Mounting Type: Through Hole Operating Temperature: -55°C ~ 150°C (TJ) Input Type: Standard Vce(on) (Max) @ Vge, Ic: 3V @ 15V, 100A Supplier Device Package: PLUS264™ Td (on/off) @ 25°C: 35ns/285ns Test Condition: 850V, 100A, 1Ohm, 15V Gate Charge: 425 nC Current - Collector (Ic) (Max): 170 A Voltage - Collector Emitter Breakdown (Max): 1700 V Current - Collector Pulsed (Icm): 600 A Power - Max: 830 W |
на замовлення 21 шт: термін постачання 21-31 дні (днів) |
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IXTA08N100D2 | IXYS |
Description: MOSFET N-CH 1000V 800MA TO263 Packaging: Tube Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB Mounting Type: Surface Mount Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 800mA (Tc) Rds On (Max) @ Id, Vgs: 21Ohm @ 400mA, 0V FET Feature: Depletion Mode Power Dissipation (Max): 60W (Tc) Supplier Device Package: TO-263AA Part Status: Active Vgs (Max): ±20V Drain to Source Voltage (Vdss): 1000 V Gate Charge (Qg) (Max) @ Vgs: 14.6 nC @ 5 V Input Capacitance (Ciss) (Max) @ Vds: 325 pF @ 25 V |
на замовлення 3690 шт: термін постачання 21-31 дні (днів) |
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IXFK140N25T | IXYS |
Description: MOSFET N-CH 250V 140A TO264AA Packaging: Tube Package / Case: TO-264-3, TO-264AA Mounting Type: Through Hole Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 140A (Tc) Rds On (Max) @ Id, Vgs: 17mOhm @ 60A, 10V Power Dissipation (Max): 960W (Tc) Vgs(th) (Max) @ Id: 5V @ 4mA Supplier Device Package: TO-264AA (IXFK) Part Status: Active Drive Voltage (Max Rds On, Min Rds On): 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 250 V Gate Charge (Qg) (Max) @ Vgs: 255 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 19000 pF @ 25 V |
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IXTY08N100D2 | IXYS |
Description: MOSFET N-CH 1000V 800MA TO252 Packaging: Tube Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63 Mounting Type: Surface Mount Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 800mA (Tc) Rds On (Max) @ Id, Vgs: 21Ohm @ 400mA, 0V FET Feature: Depletion Mode Power Dissipation (Max): 60W (Tc) Supplier Device Package: TO-252AA Part Status: Active Vgs (Max): ±20V Drain to Source Voltage (Vdss): 1000 V Gate Charge (Qg) (Max) @ Vgs: 14.6 nC @ 5 V Input Capacitance (Ciss) (Max) @ Vds: 325 pF @ 25 V |
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IXTY1R6N50D2 | IXYS |
Description: MOSFET N-CH 500V 1.6A TO252 Packaging: Tube Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63 Mounting Type: Surface Mount Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 1.6A (Tc) Rds On (Max) @ Id, Vgs: 2.3Ohm @ 800mA, 0V FET Feature: Depletion Mode Power Dissipation (Max): 100W (Tc) Supplier Device Package: TO-252AA Part Status: Active Vgs (Max): ±20V Drain to Source Voltage (Vdss): 500 V Gate Charge (Qg) (Max) @ Vgs: 23.7 nC @ 5 V Input Capacitance (Ciss) (Max) @ Vds: 645 pF @ 25 V |
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IXTP3N100D2 | IXYS |
Description: MOSFET N-CH 1000V 3A TO220AB Packaging: Tube Package / Case: TO-220-3 Mounting Type: Through Hole Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 3A (Tc) Rds On (Max) @ Id, Vgs: 5.5Ohm @ 1.5A, 0V FET Feature: Depletion Mode Power Dissipation (Max): 125W (Tc) Supplier Device Package: TO-220-3 Part Status: Active Vgs (Max): ±20V Drain to Source Voltage (Vdss): 1000 V Gate Charge (Qg) (Max) @ Vgs: 37.5 nC @ 5 V Input Capacitance (Ciss) (Max) @ Vds: 1020 pF @ 25 V |
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IXTA3N50D2 | IXYS |
Description: MOSFET N-CH 500V 3A TO263 Packaging: Tube Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB Mounting Type: Surface Mount Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 3A (Tc) Rds On (Max) @ Id, Vgs: 1.5Ohm @ 1.5A, 0V FET Feature: Depletion Mode Power Dissipation (Max): 125W (Tc) Supplier Device Package: TO-263AA Vgs (Max): ±20V Drain to Source Voltage (Vdss): 500 V Gate Charge (Qg) (Max) @ Vgs: 40 nC @ 5 V Input Capacitance (Ciss) (Max) @ Vds: 1070 pF @ 25 V |
на замовлення 135 шт: термін постачання 21-31 дні (днів) |
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IXTP6N50D2 | IXYS |
Description: MOSFET N-CH 500V 6A TO220AB Packaging: Tube Package / Case: TO-220-3 Mounting Type: Through Hole Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 6A (Tc) Rds On (Max) @ Id, Vgs: 500mOhm @ 3A, 0V FET Feature: Depletion Mode Power Dissipation (Max): 300W (Tc) Supplier Device Package: TO-220-3 Part Status: Active Vgs (Max): ±20V Drain to Source Voltage (Vdss): 500 V Gate Charge (Qg) (Max) @ Vgs: 96 nC @ 5 V Input Capacitance (Ciss) (Max) @ Vds: 2800 pF @ 25 V |
на замовлення 2156 шт: термін постачання 21-31 дні (днів) |
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IXBH2N250 | IXYS |
Description: IGBT 2500V 5A 32W TO247 Packaging: Tube Package / Case: TO-247-3 Mounting Type: Through Hole Operating Temperature: -55°C ~ 150°C (TJ) Input Type: Standard Reverse Recovery Time (trr): 920 ns Vce(on) (Max) @ Vge, Ic: 3.5V @ 15V, 2A Supplier Device Package: TO-247AD Gate Charge: 10.6 nC Part Status: Active Current - Collector (Ic) (Max): 5 A Voltage - Collector Emitter Breakdown (Max): 2500 V Current - Collector Pulsed (Icm): 13 A Power - Max: 32 W |
на замовлення 168 шт: термін постачання 21-31 дні (днів) |
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IXTP1R6N100D2 | IXYS |
Description: MOSFET N-CH 1000V 1.6A TO220AB Packaging: Tube Package / Case: TO-220-3 Mounting Type: Through Hole Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 1.6A (Tc) Rds On (Max) @ Id, Vgs: 10Ohm @ 800mA, 0V FET Feature: Depletion Mode Power Dissipation (Max): 100W (Tc) Supplier Device Package: TO-220-3 Part Status: Active Drive Voltage (Max Rds On, Min Rds On): 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 1000 V Gate Charge (Qg) (Max) @ Vgs: 27 nC @ 5 V Input Capacitance (Ciss) (Max) @ Vds: 645 pF @ 25 V |
на замовлення 5 шт: термін постачання 21-31 дні (днів) |
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IXTA1R6N100D2 | IXYS |
Description: MOSFET N-CH 1000V 1.6A TO263 Packaging: Tube Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB Mounting Type: Surface Mount Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 1.6A (Tc) Rds On (Max) @ Id, Vgs: 10Ohm @ 800mA, 0V FET Feature: Depletion Mode Power Dissipation (Max): 100W (Tc) Supplier Device Package: TO-263AA Part Status: Active Drive Voltage (Max Rds On, Min Rds On): 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 1000 V Gate Charge (Qg) (Max) @ Vgs: 27 nC @ 5 V Input Capacitance (Ciss) (Max) @ Vds: 645 pF @ 25 V |
на замовлення 121 шт: термін постачання 21-31 дні (днів) |
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IXFN160N30T | IXYS |
Description: MOSFET N-CH 300V 130A SOT227B Packaging: Tube Package / Case: SOT-227-4, miniBLOC Mounting Type: Chassis Mount Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 130A (Tc) Rds On (Max) @ Id, Vgs: 19mOhm @ 60A, 10V Power Dissipation (Max): 900W (Tc) Vgs(th) (Max) @ Id: 5V @ 8mA Supplier Device Package: SOT-227B Part Status: Active Drive Voltage (Max Rds On, Min Rds On): 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 300 V Gate Charge (Qg) (Max) @ Vgs: 335 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 28000 pF @ 25 V |
товар відсутній |
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IXTH6N100D2 | IXYS |
Description: MOSFET N-CH 1000V 6A TO247 Packaging: Tube Package / Case: TO-247-3 Mounting Type: Through Hole Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 6A (Tc) Rds On (Max) @ Id, Vgs: 2.2Ohm @ 3A, 0V FET Feature: Depletion Mode Power Dissipation (Max): 300W (Tc) Supplier Device Package: TO-247 (IXTH) Part Status: Active Vgs (Max): ±20V Drain to Source Voltage (Vdss): 1000 V Gate Charge (Qg) (Max) @ Vgs: 95 nC @ 5 V Input Capacitance (Ciss) (Max) @ Vds: 2650 pF @ 25 V |
на замовлення 595 шт: термін постачання 21-31 дні (днів) |
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IXTA1R6N50D2 | IXYS |
Description: MOSFET N-CH 500V 1.6A TO263 Packaging: Tube Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB Mounting Type: Surface Mount Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 1.6A (Tc) Rds On (Max) @ Id, Vgs: 2.3Ohm @ 800mA, 0V FET Feature: Depletion Mode Power Dissipation (Max): 100W (Tc) Supplier Device Package: TO-263AA Drive Voltage (Max Rds On, Min Rds On): 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 500 V Gate Charge (Qg) (Max) @ Vgs: 23.7 nC @ 5 V Input Capacitance (Ciss) (Max) @ Vds: 645 pF @ 25 V |
на замовлення 107 шт: термін постачання 21-31 дні (днів) |
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IXTY1R6N100D2 | IXYS |
Description: MOSFET N-CH 1000V 1.6A TO252 Packaging: Tube Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63 Mounting Type: Surface Mount Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 1.6A (Tc) Rds On (Max) @ Id, Vgs: 10Ohm @ 800mA, 0V FET Feature: Depletion Mode Power Dissipation (Max): 100W (Tc) Supplier Device Package: TO-252AA Part Status: Active Vgs (Max): ±20V Drain to Source Voltage (Vdss): 1000 V Gate Charge (Qg) (Max) @ Vgs: 27 nC @ 5 V Input Capacitance (Ciss) (Max) @ Vds: 645 pF @ 25 V |
на замовлення 4133 шт: термін постачання 21-31 дні (днів) |
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IXTP3N50D2 | IXYS |
Description: MOSFET N-CH 500V 3A TO220AB Packaging: Tube Package / Case: TO-220-3 Mounting Type: Through Hole Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 3A (Tc) Rds On (Max) @ Id, Vgs: 1.5Ohm @ 1.5A, 0V FET Feature: Depletion Mode Power Dissipation (Max): 125W (Tc) Supplier Device Package: TO-220-3 Part Status: Active Vgs (Max): ±20V Drain to Source Voltage (Vdss): 500 V Gate Charge (Qg) (Max) @ Vgs: 40 nC @ 5 V Input Capacitance (Ciss) (Max) @ Vds: 1070 pF @ 25 V |
на замовлення 250 шт: термін постачання 21-31 дні (днів) |
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IXTP6N100D2 | IXYS |
Description: MOSFET N-CH 1000V 6A TO220AB Packaging: Tube Package / Case: TO-220-3 Mounting Type: Through Hole Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 6A (Tc) Rds On (Max) @ Id, Vgs: 2.2Ohm @ 3A, 0V FET Feature: Depletion Mode Power Dissipation (Max): 300W (Tc) Supplier Device Package: TO-220-3 Part Status: Active Vgs (Max): ±20V Drain to Source Voltage (Vdss): 1000 V Gate Charge (Qg) (Max) @ Vgs: 95 nC @ 5 V Input Capacitance (Ciss) (Max) @ Vds: 2650 pF @ 25 V |
на замовлення 395 шт: термін постачання 21-31 дні (днів) |
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MWI200-06A8T |
Виробник: IXYS
Description: IGBT MODULE 600V 225A 675W E3
Packaging: Tube
Package / Case: E3
Mounting Type: Chassis Mount
Input: Standard
Configuration: Three Phase Inverter
Vce(on) (Max) @ Vge, Ic: 2.5V @ 15V, 200A
NTC Thermistor: No
Supplier Device Package: E3
IGBT Type: NPT
Part Status: Active
Current - Collector (Ic) (Max): 225 A
Voltage - Collector Emitter Breakdown (Max): 600 V
Power - Max: 675 W
Current - Collector Cutoff (Max): 1.8 mA
Input Capacitance (Cies) @ Vce: 9 nF @ 25 V
Description: IGBT MODULE 600V 225A 675W E3
Packaging: Tube
Package / Case: E3
Mounting Type: Chassis Mount
Input: Standard
Configuration: Three Phase Inverter
Vce(on) (Max) @ Vge, Ic: 2.5V @ 15V, 200A
NTC Thermistor: No
Supplier Device Package: E3
IGBT Type: NPT
Part Status: Active
Current - Collector (Ic) (Max): 225 A
Voltage - Collector Emitter Breakdown (Max): 600 V
Power - Max: 675 W
Current - Collector Cutoff (Max): 1.8 mA
Input Capacitance (Cies) @ Vce: 9 nF @ 25 V
товар відсутній
MX879RTR |
Виробник: IXYS
Description: IC PWR DRIVER 1:1 28QFN
Packaging: Tape & Reel (TR)
Package / Case: 28-VFQFN Exposed Pad
Mounting Type: Surface Mount
Number of Outputs: 8
Interface: SPI, Parallel
Switch Type: General Purpose
Operating Temperature: -40°C ~ 85°C (TA)
Rds On (Typ): 7Ohm
Voltage - Load: 6V ~ 60V
Voltage - Supply (Vcc/Vdd): 2.7V ~ 5.5V
Current - Output (Max): 150mA
Ratio - Input:Output: 1:1
Supplier Device Package: 28-QFN (5x5)
Description: IC PWR DRIVER 1:1 28QFN
Packaging: Tape & Reel (TR)
Package / Case: 28-VFQFN Exposed Pad
Mounting Type: Surface Mount
Number of Outputs: 8
Interface: SPI, Parallel
Switch Type: General Purpose
Operating Temperature: -40°C ~ 85°C (TA)
Rds On (Typ): 7Ohm
Voltage - Load: 6V ~ 60V
Voltage - Supply (Vcc/Vdd): 2.7V ~ 5.5V
Current - Output (Max): 150mA
Ratio - Input:Output: 1:1
Supplier Device Package: 28-QFN (5x5)
товар відсутній
VMO1200-01F |
Виробник: IXYS
Description: MOSFET N-CH 100V 1220A Y3-LI
Description: MOSFET N-CH 100V 1220A Y3-LI
на замовлення 153 шт:
термін постачання 21-31 дні (днів)Кількість | Ціна без ПДВ |
---|---|
1+ | 12108.26 грн |
10+ | 11619.66 грн |
IXTQ30N50L2 |
Виробник: IXYS
Description: MOSFET N-CH 500V 30A TO3P
Description: MOSFET N-CH 500V 30A TO3P
на замовлення 960 шт:
термін постачання 21-31 дні (днів)IXFK170N20T |
Виробник: IXYS
Description: MOSFET N-CH 200V 170A TO264AA
Packaging: Tube
Package / Case: TO-264-3, TO-264AA
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 170A (Tc)
Rds On (Max) @ Id, Vgs: 11mOhm @ 60A, 10V
Power Dissipation (Max): 1150W (Tc)
Vgs(th) (Max) @ Id: 5V @ 4mA
Supplier Device Package: TO-264AA (IXFK)
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 200 V
Gate Charge (Qg) (Max) @ Vgs: 265 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 19600 pF @ 25 V
Description: MOSFET N-CH 200V 170A TO264AA
Packaging: Tube
Package / Case: TO-264-3, TO-264AA
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 170A (Tc)
Rds On (Max) @ Id, Vgs: 11mOhm @ 60A, 10V
Power Dissipation (Max): 1150W (Tc)
Vgs(th) (Max) @ Id: 5V @ 4mA
Supplier Device Package: TO-264AA (IXFK)
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 200 V
Gate Charge (Qg) (Max) @ Vgs: 265 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 19600 pF @ 25 V
на замовлення 1188 шт:
термін постачання 21-31 дні (днів)Кількість | Ціна без ПДВ |
---|---|
1+ | 949.71 грн |
25+ | 740.36 грн |
100+ | 696.82 грн |
500+ | 592.64 грн |
1000+ | 543.59 грн |
IXFX170N20T |
Виробник: IXYS
Description: MOSFET N-CH 200V 170A PLUS247-3
Packaging: Tube
Package / Case: TO-247-3 Variant
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 170A (Tc)
Rds On (Max) @ Id, Vgs: 11mOhm @ 60A, 10V
Power Dissipation (Max): 1150W (Tc)
Vgs(th) (Max) @ Id: 5V @ 4mA
Supplier Device Package: PLUS247™-3
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 200 V
Gate Charge (Qg) (Max) @ Vgs: 265 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 19600 pF @ 25 V
Description: MOSFET N-CH 200V 170A PLUS247-3
Packaging: Tube
Package / Case: TO-247-3 Variant
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 170A (Tc)
Rds On (Max) @ Id, Vgs: 11mOhm @ 60A, 10V
Power Dissipation (Max): 1150W (Tc)
Vgs(th) (Max) @ Id: 5V @ 4mA
Supplier Device Package: PLUS247™-3
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 200 V
Gate Charge (Qg) (Max) @ Vgs: 265 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 19600 pF @ 25 V
товар відсутній
IXFK230N20T |
Виробник: IXYS
Description: MOSFET N-CH 200V 230A TO264AA
Packaging: Tube
Package / Case: TO-264-3, TO-264AA
Mounting Type: Through Hole
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 230A (Tc)
Rds On (Max) @ Id, Vgs: 7.5mOhm @ 60A, 10V
Power Dissipation (Max): 1670W (Tc)
Vgs(th) (Max) @ Id: 5V @ 8mA
Supplier Device Package: TO-264AA (IXFK)
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 200 V
Gate Charge (Qg) (Max) @ Vgs: 378 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 28000 pF @ 25 V
Description: MOSFET N-CH 200V 230A TO264AA
Packaging: Tube
Package / Case: TO-264-3, TO-264AA
Mounting Type: Through Hole
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 230A (Tc)
Rds On (Max) @ Id, Vgs: 7.5mOhm @ 60A, 10V
Power Dissipation (Max): 1670W (Tc)
Vgs(th) (Max) @ Id: 5V @ 8mA
Supplier Device Package: TO-264AA (IXFK)
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 200 V
Gate Charge (Qg) (Max) @ Vgs: 378 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 28000 pF @ 25 V
на замовлення 616 шт:
термін постачання 21-31 дні (днів)Кількість | Ціна без ПДВ |
---|---|
1+ | 1647.43 грн |
25+ | 1315.55 грн |
100+ | 1233.32 грн |
500+ | 987.67 грн |
IXFX230N20T |
Виробник: IXYS
Description: MOSFET N-CH 200V 230A PLUS247-3
Packaging: Tube
Package / Case: TO-247-3 Variant
Mounting Type: Through Hole
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 230A (Tc)
Rds On (Max) @ Id, Vgs: 7.5mOhm @ 60A, 10V
Power Dissipation (Max): 1670W (Tc)
Vgs(th) (Max) @ Id: 5V @ 8mA
Supplier Device Package: PLUS247™-3
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 200 V
Gate Charge (Qg) (Max) @ Vgs: 378 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 28000 pF @ 25 V
Description: MOSFET N-CH 200V 230A PLUS247-3
Packaging: Tube
Package / Case: TO-247-3 Variant
Mounting Type: Through Hole
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 230A (Tc)
Rds On (Max) @ Id, Vgs: 7.5mOhm @ 60A, 10V
Power Dissipation (Max): 1670W (Tc)
Vgs(th) (Max) @ Id: 5V @ 8mA
Supplier Device Package: PLUS247™-3
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 200 V
Gate Charge (Qg) (Max) @ Vgs: 378 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 28000 pF @ 25 V
товар відсутній
IXFN230N20T |
Виробник: IXYS
Description: MOSFET N-CH 200V 220A SOT227B
Packaging: Tube
Package / Case: SOT-227-4, miniBLOC
Mounting Type: Chassis Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 220A (Tc)
Rds On (Max) @ Id, Vgs: 7.5mOhm @ 60A, 10V
Power Dissipation (Max): 1090W (Tc)
Vgs(th) (Max) @ Id: 5V @ 8mA
Supplier Device Package: SOT-227B
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 200 V
Gate Charge (Qg) (Max) @ Vgs: 378 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 28000 pF @ 25 V
Description: MOSFET N-CH 200V 220A SOT227B
Packaging: Tube
Package / Case: SOT-227-4, miniBLOC
Mounting Type: Chassis Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 220A (Tc)
Rds On (Max) @ Id, Vgs: 7.5mOhm @ 60A, 10V
Power Dissipation (Max): 1090W (Tc)
Vgs(th) (Max) @ Id: 5V @ 8mA
Supplier Device Package: SOT-227B
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 200 V
Gate Charge (Qg) (Max) @ Vgs: 378 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 28000 pF @ 25 V
товар відсутній
IXFN180N25T |
Виробник: IXYS
Description: MOSFET N-CH 250V 168A SOT227B
Packaging: Tube
Package / Case: SOT-227-4, miniBLOC
Mounting Type: Chassis Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 168A (Tc)
Rds On (Max) @ Id, Vgs: 12.9mOhm @ 60A, 10V
Power Dissipation (Max): 900W (Tc)
Vgs(th) (Max) @ Id: 5V @ 8mA
Supplier Device Package: SOT-227B
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 250 V
Gate Charge (Qg) (Max) @ Vgs: 345 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 28000 pF @ 25 V
Description: MOSFET N-CH 250V 168A SOT227B
Packaging: Tube
Package / Case: SOT-227-4, miniBLOC
Mounting Type: Chassis Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 168A (Tc)
Rds On (Max) @ Id, Vgs: 12.9mOhm @ 60A, 10V
Power Dissipation (Max): 900W (Tc)
Vgs(th) (Max) @ Id: 5V @ 8mA
Supplier Device Package: SOT-227B
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 250 V
Gate Charge (Qg) (Max) @ Vgs: 345 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 28000 pF @ 25 V
товар відсутній
IXFK180N25T |
Виробник: IXYS
Description: MOSFET N-CH 250V 180A TO264AA
Packaging: Tube
Package / Case: TO-264-3, TO-264AA
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 180A (Tc)
Rds On (Max) @ Id, Vgs: 12.9mOhm @ 60A, 10V
Power Dissipation (Max): 1390W (Tc)
Vgs(th) (Max) @ Id: 5V @ 8mA
Supplier Device Package: TO-264AA (IXFK)
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 250 V
Gate Charge (Qg) (Max) @ Vgs: 345 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 28000 pF @ 25 V
Description: MOSFET N-CH 250V 180A TO264AA
Packaging: Tube
Package / Case: TO-264-3, TO-264AA
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 180A (Tc)
Rds On (Max) @ Id, Vgs: 12.9mOhm @ 60A, 10V
Power Dissipation (Max): 1390W (Tc)
Vgs(th) (Max) @ Id: 5V @ 8mA
Supplier Device Package: TO-264AA (IXFK)
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 250 V
Gate Charge (Qg) (Max) @ Vgs: 345 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 28000 pF @ 25 V
на замовлення 232 шт:
термін постачання 21-31 дні (днів)Кількість | Ціна без ПДВ |
---|---|
1+ | 1256.45 грн |
25+ | 979.72 грн |
100+ | 922.08 грн |
IXFX180N25T |
Виробник: IXYS
Description: MOSFET N-CH 250V 180A PLUS247-3
Packaging: Tube
Package / Case: TO-247-3 Variant
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 180A (Tc)
Rds On (Max) @ Id, Vgs: 12.9mOhm @ 60A, 10V
Power Dissipation (Max): 1390W (Tc)
Vgs(th) (Max) @ Id: 5V @ 8mA
Supplier Device Package: PLUS247™-3
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 250 V
Gate Charge (Qg) (Max) @ Vgs: 345 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 28000 pF @ 25 V
Description: MOSFET N-CH 250V 180A PLUS247-3
Packaging: Tube
Package / Case: TO-247-3 Variant
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 180A (Tc)
Rds On (Max) @ Id, Vgs: 12.9mOhm @ 60A, 10V
Power Dissipation (Max): 1390W (Tc)
Vgs(th) (Max) @ Id: 5V @ 8mA
Supplier Device Package: PLUS247™-3
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 250 V
Gate Charge (Qg) (Max) @ Vgs: 345 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 28000 pF @ 25 V
на замовлення 574 шт:
термін постачання 21-31 дні (днів)Кількість | Ціна без ПДВ |
---|---|
1+ | 1232.59 грн |
10+ | 1045.94 грн |
100+ | 904.56 грн |
500+ | 769.31 грн |
IXFK120N30T |
Виробник: IXYS
Description: MOSFET N-CH 300V 120A TO264AA
Packaging: Tube
Package / Case: TO-264-3, TO-264AA
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 120A (Tc)
Rds On (Max) @ Id, Vgs: 24mOhm @ 60A, 10V
Power Dissipation (Max): 960W (Tc)
Vgs(th) (Max) @ Id: 5V @ 4mA
Supplier Device Package: TO-264AA (IXFK)
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 300 V
Gate Charge (Qg) (Max) @ Vgs: 265 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 20000 pF @ 25 V
Description: MOSFET N-CH 300V 120A TO264AA
Packaging: Tube
Package / Case: TO-264-3, TO-264AA
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 120A (Tc)
Rds On (Max) @ Id, Vgs: 24mOhm @ 60A, 10V
Power Dissipation (Max): 960W (Tc)
Vgs(th) (Max) @ Id: 5V @ 4mA
Supplier Device Package: TO-264AA (IXFK)
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 300 V
Gate Charge (Qg) (Max) @ Vgs: 265 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 20000 pF @ 25 V
товар відсутній
IXFX120N30T |
Виробник: IXYS
Description: MOSFET N-CH 300V 120A PLUS247-3
Packaging: Tube
Package / Case: TO-247-3 Variant
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 120A (Tc)
Rds On (Max) @ Id, Vgs: 24mOhm @ 60A, 10V
Power Dissipation (Max): 960W (Tc)
Vgs(th) (Max) @ Id: 5V @ 4mA
Supplier Device Package: PLUS247™-3
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 300 V
Gate Charge (Qg) (Max) @ Vgs: 265 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 20000 pF @ 25 V
Description: MOSFET N-CH 300V 120A PLUS247-3
Packaging: Tube
Package / Case: TO-247-3 Variant
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 120A (Tc)
Rds On (Max) @ Id, Vgs: 24mOhm @ 60A, 10V
Power Dissipation (Max): 960W (Tc)
Vgs(th) (Max) @ Id: 5V @ 4mA
Supplier Device Package: PLUS247™-3
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 300 V
Gate Charge (Qg) (Max) @ Vgs: 265 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 20000 pF @ 25 V
товар відсутній
IXFK160N30T |
Виробник: IXYS
Description: MOSFET N-CH 300V 160A TO264AA
Packaging: Tube
Package / Case: TO-264-3, TO-264AA
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 160A (Tc)
Rds On (Max) @ Id, Vgs: 19mOhm @ 60A, 10V
Power Dissipation (Max): 1390W (Tc)
Vgs(th) (Max) @ Id: 5V @ 8mA
Supplier Device Package: TO-264AA (IXFK)
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 300 V
Gate Charge (Qg) (Max) @ Vgs: 335 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 28000 pF @ 25 V
Description: MOSFET N-CH 300V 160A TO264AA
Packaging: Tube
Package / Case: TO-264-3, TO-264AA
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 160A (Tc)
Rds On (Max) @ Id, Vgs: 19mOhm @ 60A, 10V
Power Dissipation (Max): 1390W (Tc)
Vgs(th) (Max) @ Id: 5V @ 8mA
Supplier Device Package: TO-264AA (IXFK)
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 300 V
Gate Charge (Qg) (Max) @ Vgs: 335 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 28000 pF @ 25 V
товар відсутній
IXFX160N30T |
Виробник: IXYS
Description: MOSFET N-CH 300V 160A PLUS247-3
Packaging: Tube
Package / Case: TO-247-3 Variant
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 160A (Tc)
Rds On (Max) @ Id, Vgs: 19mOhm @ 60A, 10V
Power Dissipation (Max): 1390W (Tc)
Vgs(th) (Max) @ Id: 5V @ 8mA
Supplier Device Package: PLUS247™-3
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 300 V
Gate Charge (Qg) (Max) @ Vgs: 335 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 28000 pF @ 25 V
Description: MOSFET N-CH 300V 160A PLUS247-3
Packaging: Tube
Package / Case: TO-247-3 Variant
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 160A (Tc)
Rds On (Max) @ Id, Vgs: 19mOhm @ 60A, 10V
Power Dissipation (Max): 1390W (Tc)
Vgs(th) (Max) @ Id: 5V @ 8mA
Supplier Device Package: PLUS247™-3
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 300 V
Gate Charge (Qg) (Max) @ Vgs: 335 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 28000 pF @ 25 V
на замовлення 640 шт:
термін постачання 21-31 дні (днів)Кількість | Ціна без ПДВ |
---|---|
1+ | 1231.88 грн |
30+ | 960.25 грн |
120+ | 903.77 грн |
510+ | 768.64 грн |
IXGR60N60C3C1 |
Виробник: IXYS
Description: IGBT 600V 75A 170W ISOPLUS247
Packaging: Tube
Package / Case: TO-247-3
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Input Type: Standard
Vce(on) (Max) @ Vge, Ic: 2.5V @ 15V, 40A
Supplier Device Package: ISOPLUS247™
IGBT Type: PT
Td (on/off) @ 25°C: 24ns/70ns
Switching Energy: 830µJ (on), 450µJ (off)
Test Condition: 480V, 40A, 3Ohm, 15V
Gate Charge: 115 nC
Part Status: Obsolete
Current - Collector (Ic) (Max): 75 A
Voltage - Collector Emitter Breakdown (Max): 600 V
Current - Collector Pulsed (Icm): 260 A
Power - Max: 170 W
Description: IGBT 600V 75A 170W ISOPLUS247
Packaging: Tube
Package / Case: TO-247-3
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Input Type: Standard
Vce(on) (Max) @ Vge, Ic: 2.5V @ 15V, 40A
Supplier Device Package: ISOPLUS247™
IGBT Type: PT
Td (on/off) @ 25°C: 24ns/70ns
Switching Energy: 830µJ (on), 450µJ (off)
Test Condition: 480V, 40A, 3Ohm, 15V
Gate Charge: 115 nC
Part Status: Obsolete
Current - Collector (Ic) (Max): 75 A
Voltage - Collector Emitter Breakdown (Max): 600 V
Current - Collector Pulsed (Icm): 260 A
Power - Max: 170 W
товар відсутній
IXGA30N60C3C1 |
Виробник: IXYS
Description: IGBT 600V 60A 220W TO263
Packaging: Tube
Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Input Type: Standard
Vce(on) (Max) @ Vge, Ic: 3V @ 15V, 20A
Supplier Device Package: TO-263AA
IGBT Type: PT
Td (on/off) @ 25°C: 17ns/42ns
Switching Energy: 120µJ (on), 90µJ (off)
Test Condition: 300V, 20A, 5Ohm, 15V
Gate Charge: 38 nC
Current - Collector (Ic) (Max): 60 A
Voltage - Collector Emitter Breakdown (Max): 600 V
Current - Collector Pulsed (Icm): 150 A
Power - Max: 220 W
Description: IGBT 600V 60A 220W TO263
Packaging: Tube
Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Input Type: Standard
Vce(on) (Max) @ Vge, Ic: 3V @ 15V, 20A
Supplier Device Package: TO-263AA
IGBT Type: PT
Td (on/off) @ 25°C: 17ns/42ns
Switching Energy: 120µJ (on), 90µJ (off)
Test Condition: 300V, 20A, 5Ohm, 15V
Gate Charge: 38 nC
Current - Collector (Ic) (Max): 60 A
Voltage - Collector Emitter Breakdown (Max): 600 V
Current - Collector Pulsed (Icm): 150 A
Power - Max: 220 W
товар відсутній
IXGP30N60C3C1 |
Виробник: IXYS
Description: IGBT 600V 60A 220W TO220
Packaging: Tube
Package / Case: TO-220-3
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Input Type: Standard
Vce(on) (Max) @ Vge, Ic: 3V @ 15V, 20A
Supplier Device Package: TO-220-3
IGBT Type: PT
Td (on/off) @ 25°C: 17ns/42ns
Switching Energy: 120µJ (on), 90µJ (off)
Test Condition: 300V, 20A, 5Ohm, 15V
Gate Charge: 38 nC
Current - Collector (Ic) (Max): 60 A
Voltage - Collector Emitter Breakdown (Max): 600 V
Current - Collector Pulsed (Icm): 150 A
Power - Max: 220 W
Description: IGBT 600V 60A 220W TO220
Packaging: Tube
Package / Case: TO-220-3
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Input Type: Standard
Vce(on) (Max) @ Vge, Ic: 3V @ 15V, 20A
Supplier Device Package: TO-220-3
IGBT Type: PT
Td (on/off) @ 25°C: 17ns/42ns
Switching Energy: 120µJ (on), 90µJ (off)
Test Condition: 300V, 20A, 5Ohm, 15V
Gate Charge: 38 nC
Current - Collector (Ic) (Max): 60 A
Voltage - Collector Emitter Breakdown (Max): 600 V
Current - Collector Pulsed (Icm): 150 A
Power - Max: 220 W
товар відсутній
IXGH30N60C3C1 |
Виробник: IXYS
Description: IGBT 600V 60A 220W TO247
Packaging: Tube
Package / Case: TO-247-3
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Input Type: Standard
Vce(on) (Max) @ Vge, Ic: 3V @ 15V, 20A
Supplier Device Package: TO-247AD
IGBT Type: PT
Td (on/off) @ 25°C: 17ns/42ns
Switching Energy: 120µJ (on), 90µJ (off)
Test Condition: 300V, 20A, 5Ohm, 15V
Gate Charge: 38 nC
Current - Collector (Ic) (Max): 60 A
Voltage - Collector Emitter Breakdown (Max): 600 V
Current - Collector Pulsed (Icm): 150 A
Power - Max: 220 W
Description: IGBT 600V 60A 220W TO247
Packaging: Tube
Package / Case: TO-247-3
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Input Type: Standard
Vce(on) (Max) @ Vge, Ic: 3V @ 15V, 20A
Supplier Device Package: TO-247AD
IGBT Type: PT
Td (on/off) @ 25°C: 17ns/42ns
Switching Energy: 120µJ (on), 90µJ (off)
Test Condition: 300V, 20A, 5Ohm, 15V
Gate Charge: 38 nC
Current - Collector (Ic) (Max): 60 A
Voltage - Collector Emitter Breakdown (Max): 600 V
Current - Collector Pulsed (Icm): 150 A
Power - Max: 220 W
товар відсутній
IXGH36N60B3C1 |
Виробник: IXYS
Description: IGBT 600V 75A 250W TO247
Packaging: Tube
Package / Case: TO-247-3
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Input Type: Standard
Vce(on) (Max) @ Vge, Ic: 1.8V @ 15V, 30A
Supplier Device Package: TO-247AD
IGBT Type: PT
Td (on/off) @ 25°C: 20ns/125ns
Switching Energy: 390µJ (on), 800µJ (off)
Test Condition: 400V, 30A, 5Ohm, 15V
Gate Charge: 80 nC
Current - Collector (Ic) (Max): 75 A
Voltage - Collector Emitter Breakdown (Max): 600 V
Current - Collector Pulsed (Icm): 200 A
Power - Max: 250 W
Description: IGBT 600V 75A 250W TO247
Packaging: Tube
Package / Case: TO-247-3
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Input Type: Standard
Vce(on) (Max) @ Vge, Ic: 1.8V @ 15V, 30A
Supplier Device Package: TO-247AD
IGBT Type: PT
Td (on/off) @ 25°C: 20ns/125ns
Switching Energy: 390µJ (on), 800µJ (off)
Test Condition: 400V, 30A, 5Ohm, 15V
Gate Charge: 80 nC
Current - Collector (Ic) (Max): 75 A
Voltage - Collector Emitter Breakdown (Max): 600 V
Current - Collector Pulsed (Icm): 200 A
Power - Max: 250 W
товар відсутній
IXGH48N60B3C1 |
Виробник: IXYS
Description: IGBT 600V 75A 300W TO247
Packaging: Tube
Package / Case: TO-247-3
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Input Type: Standard
Vce(on) (Max) @ Vge, Ic: 1.8V @ 15V, 32A
Supplier Device Package: TO-247AD
IGBT Type: PT
Td (on/off) @ 25°C: 22ns/130ns
Switching Energy: 450µJ (on), 660µJ (off)
Test Condition: 480V, 30A, 5Ohm, 15V
Gate Charge: 115 nC
Part Status: Obsolete
Current - Collector (Ic) (Max): 75 A
Voltage - Collector Emitter Breakdown (Max): 600 V
Current - Collector Pulsed (Icm): 280 A
Power - Max: 300 W
Description: IGBT 600V 75A 300W TO247
Packaging: Tube
Package / Case: TO-247-3
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Input Type: Standard
Vce(on) (Max) @ Vge, Ic: 1.8V @ 15V, 32A
Supplier Device Package: TO-247AD
IGBT Type: PT
Td (on/off) @ 25°C: 22ns/130ns
Switching Energy: 450µJ (on), 660µJ (off)
Test Condition: 480V, 30A, 5Ohm, 15V
Gate Charge: 115 nC
Part Status: Obsolete
Current - Collector (Ic) (Max): 75 A
Voltage - Collector Emitter Breakdown (Max): 600 V
Current - Collector Pulsed (Icm): 280 A
Power - Max: 300 W
товар відсутній
IXGH48N60C3C1 |
Виробник: IXYS
Description: IGBT 600V 75A 300W TO247
Packaging: Tube
Package / Case: TO-247-3
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Input Type: Standard
Vce(on) (Max) @ Vge, Ic: 2.5V @ 15V, 30A
Supplier Device Package: TO-247AD
IGBT Type: PT
Td (on/off) @ 25°C: 19ns/60ns
Switching Energy: 330µJ (on), 230µJ (off)
Test Condition: 400V, 30A, 3Ohm, 15V
Gate Charge: 77 nC
Part Status: Obsolete
Current - Collector (Ic) (Max): 75 A
Voltage - Collector Emitter Breakdown (Max): 600 V
Current - Collector Pulsed (Icm): 250 A
Power - Max: 300 W
Description: IGBT 600V 75A 300W TO247
Packaging: Tube
Package / Case: TO-247-3
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Input Type: Standard
Vce(on) (Max) @ Vge, Ic: 2.5V @ 15V, 30A
Supplier Device Package: TO-247AD
IGBT Type: PT
Td (on/off) @ 25°C: 19ns/60ns
Switching Energy: 330µJ (on), 230µJ (off)
Test Condition: 400V, 30A, 3Ohm, 15V
Gate Charge: 77 nC
Part Status: Obsolete
Current - Collector (Ic) (Max): 75 A
Voltage - Collector Emitter Breakdown (Max): 600 V
Current - Collector Pulsed (Icm): 250 A
Power - Max: 300 W
товар відсутній
IXGK100N170 |
Виробник: IXYS
Description: IGBT PT 1000V 120A TO-264
Packaging: Tube
Package / Case: TO-264-3, TO-264AA
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Input Type: Standard
Vce(on) (Max) @ Vge, Ic: 3V @ 15V, 100A
Supplier Device Package: PLUS264™
Td (on/off) @ 25°C: 35ns/285ns
Test Condition: 850V, 100A, 1Ohm, 15V
Gate Charge: 425 nC
Current - Collector (Ic) (Max): 170 A
Voltage - Collector Emitter Breakdown (Max): 1700 V
Current - Collector Pulsed (Icm): 600 A
Power - Max: 830 W
Description: IGBT PT 1000V 120A TO-264
Packaging: Tube
Package / Case: TO-264-3, TO-264AA
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Input Type: Standard
Vce(on) (Max) @ Vge, Ic: 3V @ 15V, 100A
Supplier Device Package: PLUS264™
Td (on/off) @ 25°C: 35ns/285ns
Test Condition: 850V, 100A, 1Ohm, 15V
Gate Charge: 425 nC
Current - Collector (Ic) (Max): 170 A
Voltage - Collector Emitter Breakdown (Max): 1700 V
Current - Collector Pulsed (Icm): 600 A
Power - Max: 830 W
на замовлення 21 шт:
термін постачання 21-31 дні (днів)Кількість | Ціна без ПДВ |
---|---|
1+ | 2764.9 грн |
IXTA08N100D2 |
Виробник: IXYS
Description: MOSFET N-CH 1000V 800MA TO263
Packaging: Tube
Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 800mA (Tc)
Rds On (Max) @ Id, Vgs: 21Ohm @ 400mA, 0V
FET Feature: Depletion Mode
Power Dissipation (Max): 60W (Tc)
Supplier Device Package: TO-263AA
Part Status: Active
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 1000 V
Gate Charge (Qg) (Max) @ Vgs: 14.6 nC @ 5 V
Input Capacitance (Ciss) (Max) @ Vds: 325 pF @ 25 V
Description: MOSFET N-CH 1000V 800MA TO263
Packaging: Tube
Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 800mA (Tc)
Rds On (Max) @ Id, Vgs: 21Ohm @ 400mA, 0V
FET Feature: Depletion Mode
Power Dissipation (Max): 60W (Tc)
Supplier Device Package: TO-263AA
Part Status: Active
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 1000 V
Gate Charge (Qg) (Max) @ Vgs: 14.6 nC @ 5 V
Input Capacitance (Ciss) (Max) @ Vds: 325 pF @ 25 V
на замовлення 3690 шт:
термін постачання 21-31 дні (днів)Кількість | Ціна без ПДВ |
---|---|
2+ | 186.01 грн |
50+ | 141.92 грн |
100+ | 121.64 грн |
500+ | 101.47 грн |
1000+ | 86.89 грн |
2000+ | 81.81 грн |
IXFK140N25T |
Виробник: IXYS
Description: MOSFET N-CH 250V 140A TO264AA
Packaging: Tube
Package / Case: TO-264-3, TO-264AA
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 140A (Tc)
Rds On (Max) @ Id, Vgs: 17mOhm @ 60A, 10V
Power Dissipation (Max): 960W (Tc)
Vgs(th) (Max) @ Id: 5V @ 4mA
Supplier Device Package: TO-264AA (IXFK)
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 250 V
Gate Charge (Qg) (Max) @ Vgs: 255 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 19000 pF @ 25 V
Description: MOSFET N-CH 250V 140A TO264AA
Packaging: Tube
Package / Case: TO-264-3, TO-264AA
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 140A (Tc)
Rds On (Max) @ Id, Vgs: 17mOhm @ 60A, 10V
Power Dissipation (Max): 960W (Tc)
Vgs(th) (Max) @ Id: 5V @ 4mA
Supplier Device Package: TO-264AA (IXFK)
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 250 V
Gate Charge (Qg) (Max) @ Vgs: 255 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 19000 pF @ 25 V
товар відсутній
IXTY08N100D2 |
Виробник: IXYS
Description: MOSFET N-CH 1000V 800MA TO252
Packaging: Tube
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 800mA (Tc)
Rds On (Max) @ Id, Vgs: 21Ohm @ 400mA, 0V
FET Feature: Depletion Mode
Power Dissipation (Max): 60W (Tc)
Supplier Device Package: TO-252AA
Part Status: Active
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 1000 V
Gate Charge (Qg) (Max) @ Vgs: 14.6 nC @ 5 V
Input Capacitance (Ciss) (Max) @ Vds: 325 pF @ 25 V
Description: MOSFET N-CH 1000V 800MA TO252
Packaging: Tube
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 800mA (Tc)
Rds On (Max) @ Id, Vgs: 21Ohm @ 400mA, 0V
FET Feature: Depletion Mode
Power Dissipation (Max): 60W (Tc)
Supplier Device Package: TO-252AA
Part Status: Active
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 1000 V
Gate Charge (Qg) (Max) @ Vgs: 14.6 nC @ 5 V
Input Capacitance (Ciss) (Max) @ Vds: 325 pF @ 25 V
товар відсутній
IXTY1R6N50D2 |
Виробник: IXYS
Description: MOSFET N-CH 500V 1.6A TO252
Packaging: Tube
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 1.6A (Tc)
Rds On (Max) @ Id, Vgs: 2.3Ohm @ 800mA, 0V
FET Feature: Depletion Mode
Power Dissipation (Max): 100W (Tc)
Supplier Device Package: TO-252AA
Part Status: Active
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 500 V
Gate Charge (Qg) (Max) @ Vgs: 23.7 nC @ 5 V
Input Capacitance (Ciss) (Max) @ Vds: 645 pF @ 25 V
Description: MOSFET N-CH 500V 1.6A TO252
Packaging: Tube
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 1.6A (Tc)
Rds On (Max) @ Id, Vgs: 2.3Ohm @ 800mA, 0V
FET Feature: Depletion Mode
Power Dissipation (Max): 100W (Tc)
Supplier Device Package: TO-252AA
Part Status: Active
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 500 V
Gate Charge (Qg) (Max) @ Vgs: 23.7 nC @ 5 V
Input Capacitance (Ciss) (Max) @ Vds: 645 pF @ 25 V
товар відсутній
IXTP3N100D2 |
Виробник: IXYS
Description: MOSFET N-CH 1000V 3A TO220AB
Packaging: Tube
Package / Case: TO-220-3
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 3A (Tc)
Rds On (Max) @ Id, Vgs: 5.5Ohm @ 1.5A, 0V
FET Feature: Depletion Mode
Power Dissipation (Max): 125W (Tc)
Supplier Device Package: TO-220-3
Part Status: Active
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 1000 V
Gate Charge (Qg) (Max) @ Vgs: 37.5 nC @ 5 V
Input Capacitance (Ciss) (Max) @ Vds: 1020 pF @ 25 V
Description: MOSFET N-CH 1000V 3A TO220AB
Packaging: Tube
Package / Case: TO-220-3
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 3A (Tc)
Rds On (Max) @ Id, Vgs: 5.5Ohm @ 1.5A, 0V
FET Feature: Depletion Mode
Power Dissipation (Max): 125W (Tc)
Supplier Device Package: TO-220-3
Part Status: Active
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 1000 V
Gate Charge (Qg) (Max) @ Vgs: 37.5 nC @ 5 V
Input Capacitance (Ciss) (Max) @ Vds: 1020 pF @ 25 V
товар відсутній
IXTA3N50D2 |
Виробник: IXYS
Description: MOSFET N-CH 500V 3A TO263
Packaging: Tube
Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 3A (Tc)
Rds On (Max) @ Id, Vgs: 1.5Ohm @ 1.5A, 0V
FET Feature: Depletion Mode
Power Dissipation (Max): 125W (Tc)
Supplier Device Package: TO-263AA
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 500 V
Gate Charge (Qg) (Max) @ Vgs: 40 nC @ 5 V
Input Capacitance (Ciss) (Max) @ Vds: 1070 pF @ 25 V
Description: MOSFET N-CH 500V 3A TO263
Packaging: Tube
Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 3A (Tc)
Rds On (Max) @ Id, Vgs: 1.5Ohm @ 1.5A, 0V
FET Feature: Depletion Mode
Power Dissipation (Max): 125W (Tc)
Supplier Device Package: TO-263AA
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 500 V
Gate Charge (Qg) (Max) @ Vgs: 40 nC @ 5 V
Input Capacitance (Ciss) (Max) @ Vds: 1070 pF @ 25 V
на замовлення 135 шт:
термін постачання 21-31 дні (днів)Кількість | Ціна без ПДВ |
---|---|
1+ | 319.38 грн |
10+ | 258.21 грн |
100+ | 208.89 грн |
IXTP6N50D2 |
Виробник: IXYS
Description: MOSFET N-CH 500V 6A TO220AB
Packaging: Tube
Package / Case: TO-220-3
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 6A (Tc)
Rds On (Max) @ Id, Vgs: 500mOhm @ 3A, 0V
FET Feature: Depletion Mode
Power Dissipation (Max): 300W (Tc)
Supplier Device Package: TO-220-3
Part Status: Active
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 500 V
Gate Charge (Qg) (Max) @ Vgs: 96 nC @ 5 V
Input Capacitance (Ciss) (Max) @ Vds: 2800 pF @ 25 V
Description: MOSFET N-CH 500V 6A TO220AB
Packaging: Tube
Package / Case: TO-220-3
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 6A (Tc)
Rds On (Max) @ Id, Vgs: 500mOhm @ 3A, 0V
FET Feature: Depletion Mode
Power Dissipation (Max): 300W (Tc)
Supplier Device Package: TO-220-3
Part Status: Active
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 500 V
Gate Charge (Qg) (Max) @ Vgs: 96 nC @ 5 V
Input Capacitance (Ciss) (Max) @ Vds: 2800 pF @ 25 V
на замовлення 2156 шт:
термін постачання 21-31 дні (днів)Кількість | Ціна без ПДВ |
---|---|
1+ | 595.94 грн |
50+ | 457.96 грн |
100+ | 409.74 грн |
500+ | 339.29 грн |
1000+ | 305.36 грн |
2000+ | 286.13 грн |
IXBH2N250 |
Виробник: IXYS
Description: IGBT 2500V 5A 32W TO247
Packaging: Tube
Package / Case: TO-247-3
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Input Type: Standard
Reverse Recovery Time (trr): 920 ns
Vce(on) (Max) @ Vge, Ic: 3.5V @ 15V, 2A
Supplier Device Package: TO-247AD
Gate Charge: 10.6 nC
Part Status: Active
Current - Collector (Ic) (Max): 5 A
Voltage - Collector Emitter Breakdown (Max): 2500 V
Current - Collector Pulsed (Icm): 13 A
Power - Max: 32 W
Description: IGBT 2500V 5A 32W TO247
Packaging: Tube
Package / Case: TO-247-3
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Input Type: Standard
Reverse Recovery Time (trr): 920 ns
Vce(on) (Max) @ Vge, Ic: 3.5V @ 15V, 2A
Supplier Device Package: TO-247AD
Gate Charge: 10.6 nC
Part Status: Active
Current - Collector (Ic) (Max): 5 A
Voltage - Collector Emitter Breakdown (Max): 2500 V
Current - Collector Pulsed (Icm): 13 A
Power - Max: 32 W
на замовлення 168 шт:
термін постачання 21-31 дні (днів)Кількість | Ціна без ПДВ |
---|---|
1+ | 4336.51 грн |
10+ | 3784.2 грн |
100+ | 3392.76 грн |
IXTP1R6N100D2 |
Виробник: IXYS
Description: MOSFET N-CH 1000V 1.6A TO220AB
Packaging: Tube
Package / Case: TO-220-3
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 1.6A (Tc)
Rds On (Max) @ Id, Vgs: 10Ohm @ 800mA, 0V
FET Feature: Depletion Mode
Power Dissipation (Max): 100W (Tc)
Supplier Device Package: TO-220-3
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 1000 V
Gate Charge (Qg) (Max) @ Vgs: 27 nC @ 5 V
Input Capacitance (Ciss) (Max) @ Vds: 645 pF @ 25 V
Description: MOSFET N-CH 1000V 1.6A TO220AB
Packaging: Tube
Package / Case: TO-220-3
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 1.6A (Tc)
Rds On (Max) @ Id, Vgs: 10Ohm @ 800mA, 0V
FET Feature: Depletion Mode
Power Dissipation (Max): 100W (Tc)
Supplier Device Package: TO-220-3
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 1000 V
Gate Charge (Qg) (Max) @ Vgs: 27 nC @ 5 V
Input Capacitance (Ciss) (Max) @ Vds: 645 pF @ 25 V
на замовлення 5 шт:
термін постачання 21-31 дні (днів)Кількість | Ціна без ПДВ |
---|---|
2+ | 215.49 грн |
IXTA1R6N100D2 |
Виробник: IXYS
Description: MOSFET N-CH 1000V 1.6A TO263
Packaging: Tube
Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 1.6A (Tc)
Rds On (Max) @ Id, Vgs: 10Ohm @ 800mA, 0V
FET Feature: Depletion Mode
Power Dissipation (Max): 100W (Tc)
Supplier Device Package: TO-263AA
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 1000 V
Gate Charge (Qg) (Max) @ Vgs: 27 nC @ 5 V
Input Capacitance (Ciss) (Max) @ Vds: 645 pF @ 25 V
Description: MOSFET N-CH 1000V 1.6A TO263
Packaging: Tube
Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 1.6A (Tc)
Rds On (Max) @ Id, Vgs: 10Ohm @ 800mA, 0V
FET Feature: Depletion Mode
Power Dissipation (Max): 100W (Tc)
Supplier Device Package: TO-263AA
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 1000 V
Gate Charge (Qg) (Max) @ Vgs: 27 nC @ 5 V
Input Capacitance (Ciss) (Max) @ Vds: 645 pF @ 25 V
на замовлення 121 шт:
термін постачання 21-31 дні (днів)Кількість | Ціна без ПДВ |
---|---|
2+ | 241.46 грн |
50+ | 184.5 грн |
100+ | 158.14 грн |
IXFN160N30T |
Виробник: IXYS
Description: MOSFET N-CH 300V 130A SOT227B
Packaging: Tube
Package / Case: SOT-227-4, miniBLOC
Mounting Type: Chassis Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 130A (Tc)
Rds On (Max) @ Id, Vgs: 19mOhm @ 60A, 10V
Power Dissipation (Max): 900W (Tc)
Vgs(th) (Max) @ Id: 5V @ 8mA
Supplier Device Package: SOT-227B
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 300 V
Gate Charge (Qg) (Max) @ Vgs: 335 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 28000 pF @ 25 V
Description: MOSFET N-CH 300V 130A SOT227B
Packaging: Tube
Package / Case: SOT-227-4, miniBLOC
Mounting Type: Chassis Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 130A (Tc)
Rds On (Max) @ Id, Vgs: 19mOhm @ 60A, 10V
Power Dissipation (Max): 900W (Tc)
Vgs(th) (Max) @ Id: 5V @ 8mA
Supplier Device Package: SOT-227B
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 300 V
Gate Charge (Qg) (Max) @ Vgs: 335 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 28000 pF @ 25 V
товар відсутній
IXTH6N100D2 |
Виробник: IXYS
Description: MOSFET N-CH 1000V 6A TO247
Packaging: Tube
Package / Case: TO-247-3
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 6A (Tc)
Rds On (Max) @ Id, Vgs: 2.2Ohm @ 3A, 0V
FET Feature: Depletion Mode
Power Dissipation (Max): 300W (Tc)
Supplier Device Package: TO-247 (IXTH)
Part Status: Active
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 1000 V
Gate Charge (Qg) (Max) @ Vgs: 95 nC @ 5 V
Input Capacitance (Ciss) (Max) @ Vds: 2650 pF @ 25 V
Description: MOSFET N-CH 1000V 6A TO247
Packaging: Tube
Package / Case: TO-247-3
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 6A (Tc)
Rds On (Max) @ Id, Vgs: 2.2Ohm @ 3A, 0V
FET Feature: Depletion Mode
Power Dissipation (Max): 300W (Tc)
Supplier Device Package: TO-247 (IXTH)
Part Status: Active
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 1000 V
Gate Charge (Qg) (Max) @ Vgs: 95 nC @ 5 V
Input Capacitance (Ciss) (Max) @ Vds: 2650 pF @ 25 V
на замовлення 595 шт:
термін постачання 21-31 дні (днів)Кількість | Ціна без ПДВ |
---|---|
1+ | 694.21 грн |
30+ | 533.8 грн |
120+ | 477.61 грн |
510+ | 395.49 грн |
IXTA1R6N50D2 |
Виробник: IXYS
Description: MOSFET N-CH 500V 1.6A TO263
Packaging: Tube
Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 1.6A (Tc)
Rds On (Max) @ Id, Vgs: 2.3Ohm @ 800mA, 0V
FET Feature: Depletion Mode
Power Dissipation (Max): 100W (Tc)
Supplier Device Package: TO-263AA
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 500 V
Gate Charge (Qg) (Max) @ Vgs: 23.7 nC @ 5 V
Input Capacitance (Ciss) (Max) @ Vds: 645 pF @ 25 V
Description: MOSFET N-CH 500V 1.6A TO263
Packaging: Tube
Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 1.6A (Tc)
Rds On (Max) @ Id, Vgs: 2.3Ohm @ 800mA, 0V
FET Feature: Depletion Mode
Power Dissipation (Max): 100W (Tc)
Supplier Device Package: TO-263AA
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 500 V
Gate Charge (Qg) (Max) @ Vgs: 23.7 nC @ 5 V
Input Capacitance (Ciss) (Max) @ Vds: 645 pF @ 25 V
на замовлення 107 шт:
термін постачання 21-31 дні (днів)Кількість | Ціна без ПДВ |
---|---|
2+ | 241.46 грн |
50+ | 184.5 грн |
100+ | 158.14 грн |
IXTY1R6N100D2 |
Виробник: IXYS
Description: MOSFET N-CH 1000V 1.6A TO252
Packaging: Tube
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 1.6A (Tc)
Rds On (Max) @ Id, Vgs: 10Ohm @ 800mA, 0V
FET Feature: Depletion Mode
Power Dissipation (Max): 100W (Tc)
Supplier Device Package: TO-252AA
Part Status: Active
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 1000 V
Gate Charge (Qg) (Max) @ Vgs: 27 nC @ 5 V
Input Capacitance (Ciss) (Max) @ Vds: 645 pF @ 25 V
Description: MOSFET N-CH 1000V 1.6A TO252
Packaging: Tube
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 1.6A (Tc)
Rds On (Max) @ Id, Vgs: 10Ohm @ 800mA, 0V
FET Feature: Depletion Mode
Power Dissipation (Max): 100W (Tc)
Supplier Device Package: TO-252AA
Part Status: Active
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 1000 V
Gate Charge (Qg) (Max) @ Vgs: 27 nC @ 5 V
Input Capacitance (Ciss) (Max) @ Vds: 645 pF @ 25 V
на замовлення 4133 шт:
термін постачання 21-31 дні (днів)Кількість | Ціна без ПДВ |
---|---|
2+ | 195.84 грн |
10+ | 158.44 грн |
100+ | 128.15 грн |
500+ | 106.9 грн |
1000+ | 91.53 грн |
2000+ | 86.19 грн |
IXTP3N50D2 |
Виробник: IXYS
Description: MOSFET N-CH 500V 3A TO220AB
Packaging: Tube
Package / Case: TO-220-3
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 3A (Tc)
Rds On (Max) @ Id, Vgs: 1.5Ohm @ 1.5A, 0V
FET Feature: Depletion Mode
Power Dissipation (Max): 125W (Tc)
Supplier Device Package: TO-220-3
Part Status: Active
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 500 V
Gate Charge (Qg) (Max) @ Vgs: 40 nC @ 5 V
Input Capacitance (Ciss) (Max) @ Vds: 1070 pF @ 25 V
Description: MOSFET N-CH 500V 3A TO220AB
Packaging: Tube
Package / Case: TO-220-3
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 3A (Tc)
Rds On (Max) @ Id, Vgs: 1.5Ohm @ 1.5A, 0V
FET Feature: Depletion Mode
Power Dissipation (Max): 125W (Tc)
Supplier Device Package: TO-220-3
Part Status: Active
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 500 V
Gate Charge (Qg) (Max) @ Vgs: 40 nC @ 5 V
Input Capacitance (Ciss) (Max) @ Vds: 1070 pF @ 25 V
на замовлення 250 шт:
термін постачання 21-31 дні (днів)Кількість | Ціна без ПДВ |
---|---|
1+ | 289.19 грн |
10+ | 233.33 грн |
100+ | 188.8 грн |
IXTP6N100D2 |
Виробник: IXYS
Description: MOSFET N-CH 1000V 6A TO220AB
Packaging: Tube
Package / Case: TO-220-3
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 6A (Tc)
Rds On (Max) @ Id, Vgs: 2.2Ohm @ 3A, 0V
FET Feature: Depletion Mode
Power Dissipation (Max): 300W (Tc)
Supplier Device Package: TO-220-3
Part Status: Active
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 1000 V
Gate Charge (Qg) (Max) @ Vgs: 95 nC @ 5 V
Input Capacitance (Ciss) (Max) @ Vds: 2650 pF @ 25 V
Description: MOSFET N-CH 1000V 6A TO220AB
Packaging: Tube
Package / Case: TO-220-3
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 6A (Tc)
Rds On (Max) @ Id, Vgs: 2.2Ohm @ 3A, 0V
FET Feature: Depletion Mode
Power Dissipation (Max): 300W (Tc)
Supplier Device Package: TO-220-3
Part Status: Active
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 1000 V
Gate Charge (Qg) (Max) @ Vgs: 95 nC @ 5 V
Input Capacitance (Ciss) (Max) @ Vds: 2650 pF @ 25 V
на замовлення 395 шт:
термін постачання 21-31 дні (днів)Кількість | Ціна без ПДВ |
---|---|
1+ | 595.94 грн |
50+ | 457.96 грн |
100+ | 409.74 грн |