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IXTH440N055T2 IXTH440N055T2 IXYS littelfuse-discrete-mosfets-ixt-440n055t2-datasheet?assetguid=6586e5ca-cda3-411d-bbe5-f50ff4a13d25 Description: MOSFET N-CH 55V 440A TO247
Packaging: Tube
Package / Case: TO-247-3
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 440A (Tc)
Rds On (Max) @ Id, Vgs: 1.8mOhm @ 100A, 10V
Power Dissipation (Max): 1000W (Tc)
Vgs(th) (Max) @ Id: 4V @ 250µA
Supplier Device Package: TO-247 (IXTH)
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 55 V
Gate Charge (Qg) (Max) @ Vgs: 405 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 25000 pF @ 25 V
товару немає в наявності
 Мінімальне замовлення: 300 шт
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IXTH500N04T2 IXTH500N04T2 IXYS littelfuse_discrete_mosfets_n-channel_trench_gate_ixt_500n04t2_datasheet.pdf.pdf Description: MOSFET N-CH 40V 500A TO247
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IXTK550N055T2 IXTK550N055T2 IXYS littelfuse_discrete_mosfets_n-channel_trench_gate_ixt_550n055t2_datasheet.pdf.pdf Description: MOSFET N-CH 55V 550A TO264
Packaging: Tube
Package / Case: TO-264-3, TO-264AA
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 550A (Tc)
Rds On (Max) @ Id, Vgs: 1.6mOhm @ 100A, 10V
Power Dissipation (Max): 1250W (Tc)
Vgs(th) (Max) @ Id: 4V @ 250µA
Supplier Device Package: TO-264 (IXTK)
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 55 V
Gate Charge (Qg) (Max) @ Vgs: 595 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 40000 pF @ 25 V
товару немає в наявності
 Мінімальне замовлення: 300 шт
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IXTK600N04T2 IXTK600N04T2 IXYS DS100209IXTKTX600N04T2.pdf Description: MOSFET N-CH 40V 600A TO264
Packaging: Tube
Package / Case: TO-264-3, TO-264AA
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 600A (Tc)
Rds On (Max) @ Id, Vgs: 1.5mOhm @ 100A, 10V
Power Dissipation (Max): 1250W (Tc)
Vgs(th) (Max) @ Id: 3.5V @ 250µA
Supplier Device Package: TO-264 (IXTK)
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 40 V
Gate Charge (Qg) (Max) @ Vgs: 590 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 40000 pF @ 25 V
товару немає в наявності
 Мінімальне замовлення: 300 шт
В кошику  од. на суму  грн.
IXTN110N20L2 IXTN110N20L2 IXYS littelfuse-discrete-mosfets-ixtn110n20-datasheet?assetguid=880d095b-d731-445d-a39f-6ab5b5030060 Description: MOSFET N-CH 200V 100A SOT227B
Packaging: Tube
Package / Case: SOT-227-4, miniBLOC
Mounting Type: Chassis Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 100A (Tc)
Rds On (Max) @ Id, Vgs: 24mOhm @ 55A, 10V
Power Dissipation (Max): 735W (Tc)
Vgs(th) (Max) @ Id: 4.5V @ 3mA
Supplier Device Package: SOT-227B
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 200 V
Gate Charge (Qg) (Max) @ Vgs: 500 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 23000 pF @ 25 V
на замовлення 10 шт:
термін постачання 21-31 дні (днів)
1+4028.02 грн
В кошику  од. на суму  грн.
IXTN200N10T IXTN200N10T IXYS littelfuse-discrete-mosfets-ixtn200n10t-datasheet?assetguid=c78c43fa-9c23-4a31-a344-9f883b414062 Description: MOSFET N-CH 100V 200A SOT227B
Packaging: Tube
Package / Case: SOT-227-4, miniBLOC
Mounting Type: Chassis Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 200A (Tc)
Rds On (Max) @ Id, Vgs: 5.5mOhm @ 50A, 10V
Power Dissipation (Max): 550W (Tc)
Vgs(th) (Max) @ Id: 4.5V @ 250µA
Supplier Device Package: SOT-227B
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 100 V
Gate Charge (Qg) (Max) @ Vgs: 152 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 9400 pF @ 25 V
на замовлення 342 шт:
термін постачання 21-31 дні (днів)
1+2969.87 грн
10+2139.13 грн
100+1826.07 грн
В кошику  од. на суму  грн.
IXTN550N055T2 IXTN550N055T2 IXYS littelfuse_discrete_mosfets_n-channel_trench_gate_ixtn550n055t2_datasheet.pdf.pdf Description: MOSFET N-CH 55V 550A SOT227B
Packaging: Tube
Package / Case: SOT-227-4, miniBLOC
Mounting Type: Chassis Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 550A (Tc)
Rds On (Max) @ Id, Vgs: 1.3mOhm @ 100A, 10V
Power Dissipation (Max): 940W (Tc)
Vgs(th) (Max) @ Id: 4V @ 250µA
Supplier Device Package: SOT-227B
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 55 V
Gate Charge (Qg) (Max) @ Vgs: 595 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 40000 pF @ 25 V
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IXTP14N60PM IXTP14N60PM IXYS littelfuse-discrete-mosfets-ixtp14n60pm-datasheet?assetguid=390cf4a8-b7e8-49bc-89a4-fa61e050fda9 Description: MOSFET N-CH 600V 7A TO220
Packaging: Tube
Package / Case: TO-220-3 Full Pack, Isolated Tab
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 7A (Tc)
Rds On (Max) @ Id, Vgs: 550mOhm @ 7A, 10V
Power Dissipation (Max): 75W (Tc)
Vgs(th) (Max) @ Id: 5.5V @ 250µA
Supplier Device Package: TO-220 Isolated Tab
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±30V
Drain to Source Voltage (Vdss): 600 V
Gate Charge (Qg) (Max) @ Vgs: 36 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 2500 pF @ 25 V
товару немає в наявності
 Мінімальне замовлення: 300 шт
В кошику  од. на суму  грн.
IXTQ50N25T IXTQ50N25T IXYS littelfuse-discrete-mosfets-ixt-50n25t-datasheet?assetguid=d7f19b2b-0219-4b0c-a29d-b093518ee586 Description: MOSFET N-CH 250V 50A TO3P
Packaging: Tube
Package / Case: TO-3P-3, SC-65-3
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 50A (Tc)
Rds On (Max) @ Id, Vgs: 60mOhm @ 25A, 10V
Power Dissipation (Max): 400W (Tc)
Vgs(th) (Max) @ Id: 5V @ 1mA
Supplier Device Package: TO-3P
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±30V
Drain to Source Voltage (Vdss): 250 V
Gate Charge (Qg) (Max) @ Vgs: 78 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 4000 pF @ 25 V
на замовлення 620 шт:
термін постачання 21-31 дні (днів)
1+614.51 грн
30+345.57 грн
120+291.46 грн
510+236.34 грн
В кошику  од. на суму  грн.
IXTQ60N20L2 IXTQ60N20L2 IXYS littelfuse-discrete-mosfets-ixt-60n20-datasheet?assetguid=963578f0-6c06-4c5b-abb1-606983fd5867 Description: MOSFET N-CH 200V 60A TO3P
Packaging: Tube
Package / Case: TO-3P-3, SC-65-3
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 60A (Tc)
Rds On (Max) @ Id, Vgs: 45mOhm @ 30A, 10V
Power Dissipation (Max): 540W (Tc)
Vgs(th) (Max) @ Id: 4.5V @ 250µA
Supplier Device Package: TO-3P
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 200 V
Gate Charge (Qg) (Max) @ Vgs: 255 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 10500 pF @ 25 V
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IXTT60N20L2 IXTT60N20L2 IXYS littelfuse-discrete-mosfets-ixt-60n20-datasheet?assetguid=963578f0-6c06-4c5b-abb1-606983fd5867 Description: MOSFET N-CH 200V 60A TO268
Packaging: Tube
Package / Case: TO-268-3, D3PAK (2 Leads + Tab), TO-268AA
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 60A (Tc)
Rds On (Max) @ Id, Vgs: 45mOhm @ 30A, 10V
Power Dissipation (Max): 540W (Tc)
Vgs(th) (Max) @ Id: 4.5V @ 250µA
Supplier Device Package: TO-268AA
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 200 V
Gate Charge (Qg) (Max) @ Vgs: 255 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 10500 pF @ 25 V
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IXTT75N10L2 IXTT75N10L2 IXYS littelfuse_discrete_mosfets_n-channel_linear_ixt_75n10_datasheet.pdf.pdf Description: MOSFET N-CH 100V 75A TO268
Packaging: Tube
Package / Case: TO-268-3, D3PAK (2 Leads + Tab), TO-268AA
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 75A (Tc)
Rds On (Max) @ Id, Vgs: 21mOhm @ 500mA, 10V
Power Dissipation (Max): 400W (Tc)
Vgs(th) (Max) @ Id: 4.5V @ 250µA
Supplier Device Package: TO-268AA
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 100 V
Gate Charge (Qg) (Max) @ Vgs: 215 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 8100 pF @ 25 V
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IXTT75N20L2 IXTT75N20L2 IXYS Description: MOSFET N-CH 200V 75A DPAK
Packaging: Tube
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IXTX600N04T2 IXTX600N04T2 IXYS DS100209IXTKTX600N04T2.pdf Description: MOSFET N-CH 40V 600A PLUS247-3
Packaging: Tube
Package / Case: TO-247-3 Variant
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 600A (Tc)
Rds On (Max) @ Id, Vgs: 1.5mOhm @ 100A, 10V
Power Dissipation (Max): 1250W (Tc)
Vgs(th) (Max) @ Id: 3.5V @ 250µA
Supplier Device Package: PLUS247™-3
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 40 V
Gate Charge (Qg) (Max) @ Vgs: 590 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 40000 pF @ 25 V
товару немає в наявності
 Мінімальне замовлення: 300 шт
В кошику  од. на суму  грн.
IXTX8N150L IXTX8N150L IXYS littelfuse_discrete_mosfets_n-channel_linear_ixt_8n150l_datasheet.pdf.pdf Description: MOSFET N-CH 1500V 8A PLUS247-3
Packaging: Tube
Package / Case: TO-247-3 Variant
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 8A (Tc)
Rds On (Max) @ Id, Vgs: 3.6Ohm @ 4A, 20V
Power Dissipation (Max): 700W (Tc)
Vgs(th) (Max) @ Id: 8V @ 250µA
Supplier Device Package: PLUS247™-3
Drive Voltage (Max Rds On, Min Rds On): 20V
Vgs (Max): ±30V
Drain to Source Voltage (Vdss): 1500 V
Gate Charge (Qg) (Max) @ Vgs: 250 nC @ 15 V
Input Capacitance (Ciss) (Max) @ Vds: 8000 pF @ 25 V
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IXTY02N120P IXTY02N120P IXYS littelfuse-discrete-mosfets-ixt-02n120p-datasheet?assetguid=28c53e8f-de75-400b-95e2-28ff1adfa0e0 Description: MOSFET N-CH 1200V 200MA TO252
Packaging: Tube
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 200mA (Tc)
Rds On (Max) @ Id, Vgs: 75Ohm @ 500mA, 10V
Power Dissipation (Max): 33W (Tc)
Vgs(th) (Max) @ Id: 4V @ 100µA
Supplier Device Package: TO-252AA
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 1200 V
Gate Charge (Qg) (Max) @ Vgs: 4.7 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 104 pF @ 25 V
на замовлення 4625 шт:
термін постачання 21-31 дні (днів)
2+257.88 грн
70+118.76 грн
140+107.78 грн
560+85.20 грн
1050+79.59 грн
2030+74.59 грн
Мінімальне замовлення: 2 шт
В кошику  од. на суму  грн.
IXFP180N10T2 IXFP180N10T2 IXYS IXF%28A%2CP%29180N10T2.pdf Description: MOSFET N-CH 100V 180A TO220AB
Packaging: Tube
Package / Case: TO-220-3
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 180A (Tc)
Rds On (Max) @ Id, Vgs: 6mOhm @ 50A, 10V
Power Dissipation (Max): 480W (Tc)
Vgs(th) (Max) @ Id: 4V @ 250µA
Supplier Device Package: TO-220-3
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 100 V
Gate Charge (Qg) (Max) @ Vgs: 185 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 10500 pF @ 25 V
на замовлення 318 шт:
термін постачання 21-31 дні (днів)
1+609.02 грн
50+319.85 грн
100+294.09 грн
В кошику  од. на суму  грн.
IXGH90N60B3 IXGH90N60B3 IXYS DS99994(IXGH90N60B3).pdf Description: IGBT 600V 75A 660W TO247
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IXGP20N120B3 IXGP20N120B3 IXYS littelfuse-discrete-igbts-ixg-20n120b3-datasheet?assetguid=def4a3cc-20a8-4c45-8af2-ba8dcd0c72ff Description: IGBT PT 1200V 36A TO-220-3
Packaging: Tube
Package / Case: TO-220-3
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Input Type: Standard
Vce(on) (Max) @ Vge, Ic: 3.1V @ 15V, 16A
Supplier Device Package: TO-220-3
IGBT Type: PT
Td (on/off) @ 25°C: 16ns/150ns
Switching Energy: 920µJ (on), 560µJ (off)
Test Condition: 600V, 16A, 15Ohm, 15V
Gate Charge: 51 nC
Part Status: Active
Current - Collector (Ic) (Max): 36 A
Voltage - Collector Emitter Breakdown (Max): 1200 V
Current - Collector Pulsed (Icm): 80 A
Power - Max: 180 W
на замовлення 165 шт:
термін постачання 21-31 дні (днів)
1+609.81 грн
50+320.45 грн
100+294.71 грн
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IXGX120N60C2 IXGX120N60C2 IXYS DS99515A(IXGK-GX120N60C2).pdf Description: IGBT 600V 75A 830W PLUS TO-247
Packaging: Tube
Package / Case: TO-247-3 Variant
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Input Type: Standard
Vce(on) (Max) @ Vge, Ic: 2.5V @ 15V, 100A
Supplier Device Package: PLUS247™-3
Td (on/off) @ 25°C: 40ns/120ns
Switching Energy: 1.7mJ (on), 1mJ (off)
Test Condition: 400V, 80A, 1Ohm, 15V
Gate Charge: 370 nC
Part Status: Obsolete
Current - Collector (Ic) (Max): 75 A
Voltage - Collector Emitter Breakdown (Max): 600 V
Current - Collector Pulsed (Icm): 500 A
Power - Max: 830 W
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IXTY1N80P IXTY1N80P IXYS DS100112(IXTA-TP-TU-TY1N80P).pdf Description: MOSFET N-CH 800V 1A TO252
товару немає в наявності
 Мінімальне замовлення: 70 шт
В кошику  од. на суму  грн.
IXTZ550N055T2 IXYS Description: MOSFET N-CH 55V 550A DE475
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 175°C (TJ)
Mounting Type: Surface Mount
Package / Case: 6-SMD, Flat Leads
Packaging: Tube
Input Capacitance (Ciss) (Max) @ Vds: 40000 pF @ 25 V
Gate Charge (Qg) (Max) @ Vgs: 595 nC @ 10 V
Drain to Source Voltage (Vdss): 55 V
Vgs (Max): ±20V
Drive Voltage (Max Rds On, Min Rds On): 10V
Part Status: Active
Supplier Device Package: DE475
Vgs(th) (Max) @ Id: 4V @ 250µA
Power Dissipation (Max): 600W (Tc)
Rds On (Max) @ Id, Vgs: 1mOhm @ 100A, 10V
Current - Continuous Drain (Id) @ 25°C: 550A (Tc)
товару немає в наявності
 Мінімальне замовлення: 300 шт
В кошику  од. на суму  грн.
IXTF1N400 IXTF1N400 IXYS DS100159D(IXTF1N400).pdf Description: MOSFET N-CH 4000V 1A ISOPLUS I4
товару немає в наявності
 Мінімальне замовлення: 25 шт
В кошику  од. на суму  грн.
IXTH16N10D2 IXTH16N10D2 IXYS littelfuse-discrete-mosfets-ixt-16n10-datasheet?assetguid=f6744185-82d5-4569-a65f-4b44e1fa3704 Description: MOSFET N-CH 100V 16A TO247
Input Capacitance (Ciss) (Max) @ Vds: 5700 pF @ 25 V
Gate Charge (Qg) (Max) @ Vgs: 225 nC @ 5 V
Drain to Source Voltage (Vdss): 100 V
Vgs (Max): ±20V
Drive Voltage (Max Rds On, Min Rds On): 0V
Part Status: Active
Supplier Device Package: TO-247 (IXTH)
Power Dissipation (Max): 830W (Tc)
Rds On (Max) @ Id, Vgs: 64mOhm @ 8A, 0V
Current - Continuous Drain (Id) @ 25°C: 16A (Tc)
FET Type: N-Channel, Depletion Mode
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 175°C (TJ)
Mounting Type: Through Hole
Package / Case: TO-247-3
Packaging: Tube
товару немає в наявності
 Мінімальне замовлення: 300 шт
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IXTH16N50D2 IXTH16N50D2 IXYS littelfuse-discrete-mosfets-ixt-3n100-datasheet?assetguid=f0dbe4a2-4395-4958-a595-7cdc8d2662e1 Description: MOSFET N-CH 500V 16A TO247-3
Packaging: Tube
Package / Case: TO-247-3
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel, Depletion Mode
Current - Continuous Drain (Id) @ 25°C: 16A (Tc)
Rds On (Max) @ Id, Vgs: 240mOhm @ 8A, 0V
Power Dissipation (Max): 695W (Tc)
Supplier Device Package: TO-247 (IXTH)
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 0V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 500 V
Gate Charge (Qg) (Max) @ Vgs: 199 nC @ 5 V
Input Capacitance (Ciss) (Max) @ Vds: 5250 pF @ 25 V
на замовлення 788 шт:
термін постачання 21-31 дні (днів)
1+1409.30 грн
30+849.71 грн
60+789.40 грн
120+693.25 грн
510+664.95 грн
В кошику  од. на суму  грн.
IXTT16N10D2 IXTT16N10D2 IXYS littelfuse-discrete-mosfets-ixt-16n10-datasheet?assetguid=f6744185-82d5-4569-a65f-4b44e1fa3704 Description: MOSFET N-CH 100V 16A TO268
Input Capacitance (Ciss) (Max) @ Vds: 5700 pF @ 25 V
Gate Charge (Qg) (Max) @ Vgs: 225 nC @ 5 V
Drain to Source Voltage (Vdss): 100 V
Vgs (Max): ±20V
Drive Voltage (Max Rds On, Min Rds On): 0V
Part Status: Active
Supplier Device Package: TO-268AA
Current - Continuous Drain (Id) @ 25°C: 16A (Tc)
FET Type: N-Channel, Depletion Mode
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 175°C (TJ)
Mounting Type: Surface Mount
Package / Case: TO-268-3, D3PAK (2 Leads + Tab), TO-268AA
Packaging: Tube
Power Dissipation (Max): 830W (Tc)
Rds On (Max) @ Id, Vgs: 64mOhm @ 8A, 0V
товару немає в наявності
 Мінімальне замовлення: 300 шт
В кошику  од. на суму  грн.
IXGF30N400 IXGF30N400 IXYS littelfuse_discrete_igbts_npt_ixgf30n400_datasheet.pdf.pdf Description: IGBT 4000V 30A 160W I4-PAK
товару немає в наявності
 Мінімальне замовлення: 25 шт
В кошику  од. на суму  грн.
IXXK100N60B3H1 IXXK100N60B3H1 IXYS IXXK%2CX100N60B3H1.pdf Description: IGBT PT 600V 200A TO264
Power - Max: 695 W
Current - Collector Pulsed (Icm): 440 A
Voltage - Collector Emitter Breakdown (Max): 600 V
Current - Collector (Ic) (Max): 200 A
Gate Charge: 143 nC
Test Condition: 360V, 70A, 2Ohm, 15V
Switching Energy: 1.9mJ (on), 2mJ (off)
Td (on/off) @ 25°C: 30ns/120ns
IGBT Type: PT
Supplier Device Package: TO-264 (IXXK)
Vce(on) (Max) @ Vge, Ic: 1.8V @ 15V, 70A
Reverse Recovery Time (trr): 140 ns
Input Type: Standard
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Through Hole
Package / Case: TO-264-3, TO-264AA
Packaging: Tube
на замовлення 169 шт:
термін постачання 21-31 дні (днів)
1+1531.57 грн
25+1001.24 грн
100+981.89 грн
В кошику  од. на суму  грн.
IXXH100N60B3 IXXH100N60B3 IXYS littelfuse_discrete_igbts_xpt_ixxh100n60b3_datasheet.pdf.pdf Description: IGBT 600V 220A 830W TO247AD
Power - Max: 830 W
Current - Collector Pulsed (Icm): 480 A
Voltage - Collector Emitter Breakdown (Max): 600 V
Current - Collector (Ic) (Max): 220 A
Gate Charge: 143 nC
Test Condition: 360V, 70A, 2Ohm, 15V
Switching Energy: 1.9mJ (on), 2mJ (off)
Td (on/off) @ 25°C: 30ns/120ns
IGBT Type: PT
Supplier Device Package: TO-247AD (IXXH)
Vce(on) (Max) @ Vge, Ic: 1.8V @ 15V, 70A
Input Type: Standard
Operating Temperature: -55°C ~ 175°C (TJ)
Mounting Type: Through Hole
Package / Case: TO-247-3
Packaging: Tube
на замовлення 298 шт:
термін постачання 21-31 дні (днів)
1+877.87 грн
30+539.22 грн
120+487.21 грн
В кошику  од. на суму  грн.
IXXH50N60C3 IXXH50N60C3 IXYS littelfuse-discrete-igbts-ixxh50n60c3-datasheet?assetguid=cba71091-b144-4329-b000-bbf5206ce5e3 Description: IGBT PT 600V 100A TO-247AD
Packaging: Tube
Package / Case: TO-247-3
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 175°C (TJ)
Input Type: Standard
Vce(on) (Max) @ Vge, Ic: 2.3V @ 15V, 36A
Supplier Device Package: TO-247AD (IXXH)
IGBT Type: PT
Td (on/off) @ 25°C: 24ns/62ns
Switching Energy: 720µJ (on), 330µJ (off)
Test Condition: 360V, 36A, 5Ohm, 15V
Gate Charge: 64 nC
Current - Collector (Ic) (Max): 100 A
Voltage - Collector Emitter Breakdown (Max): 600 V
Current - Collector Pulsed (Icm): 200 A
Power - Max: 600 W
товару немає в наявності
 Мінімальне замовлення: 300 шт
В кошику  од. на суму  грн.
IXXH50N60C3D1 IXXH50N60C3D1 IXYS littelfuse-discrete-igbts-ixxh50n60c3d1-datasheet?assetguid=f95c77ee-e30c-40a0-add2-d813f16ccfd2 Description: IGBT PT 600V 100A TO-247AD
Packaging: Tube
Package / Case: TO-247-3
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 175°C (TJ)
Input Type: Standard
Reverse Recovery Time (trr): 25 ns
Vce(on) (Max) @ Vge, Ic: 2.3V @ 15V, 36A
Supplier Device Package: TO-247AD (IXXH)
IGBT Type: PT
Td (on/off) @ 25°C: 24ns/62ns
Switching Energy: 720µJ (on), 330µJ (off)
Test Condition: 360V, 36A, 5Ohm, 15V
Gate Charge: 64 nC
Part Status: Active
Current - Collector (Ic) (Max): 100 A
Voltage - Collector Emitter Breakdown (Max): 600 V
Current - Collector Pulsed (Icm): 200 A
Power - Max: 600 W
товару немає в наявності
В кошику  од. на суму  грн.
IXXH100N60C3 IXXH100N60C3 IXYS littelfuse_discrete_igbts_xpt_ixxh100n60c3_datasheet.pdf.pdf Description: IGBT 600V 190A 830W TO247AD
Supplier Device Package: TO-247AD (IXXH)
Vce(on) (Max) @ Vge, Ic: 2.2V @ 15V, 70A
Input Type: Standard
Operating Temperature: -55°C ~ 175°C (TJ)
Mounting Type: Through Hole
Package / Case: TO-247-3
Packaging: Tube
Power - Max: 830 W
Current - Collector Pulsed (Icm): 380 A
Voltage - Collector Emitter Breakdown (Max): 600 V
Current - Collector (Ic) (Max): 190 A
Part Status: Active
Gate Charge: 150 nC
Test Condition: 360V, 70A, 2Ohm, 15V
Switching Energy: 2mJ (on), 950µJ (off)
Td (on/off) @ 25°C: 30ns/90ns
IGBT Type: PT
на замовлення 19 шт:
термін постачання 21-31 дні (днів)
1+837.11 грн
В кошику  од. на суму  грн.
IXXK100N60C3H1 IXXK100N60C3H1 IXYS DS100283BIXXKX100N60C3H1.pdf Description: IGBT PT 600V 170A TO-264
Power - Max: 695 W
Current - Collector Pulsed (Icm): 340 A
Voltage - Collector Emitter Breakdown (Max): 600 V
Current - Collector (Ic) (Max): 170 A
Part Status: Active
Gate Charge: 150 nC
Test Condition: 360V, 70A, 2Ohm, 15V
Switching Energy: 2mJ (on), 950µJ (off)
Td (on/off) @ 25°C: 30ns/90ns
IGBT Type: PT
Supplier Device Package: TO-264 (IXXK)
Vce(on) (Max) @ Vge, Ic: 2.2V @ 15V, 70A
Reverse Recovery Time (trr): 140 ns
Input Type: Standard
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Through Hole
Package / Case: TO-264-3, TO-264AA
Packaging: Tube
на замовлення 133 шт:
термін постачання 21-31 дні (днів)
1+2055.16 грн
25+1305.87 грн
100+1156.87 грн
В кошику  од. на суму  грн.
IXTA130N10T-TRL IXTA130N10T-TRL IXYS littelfuse-discrete-mosfets-ixt-130n10t-1of2-datasheet?assetguid=35a29cb3-cabc-48a7-80a0-8b3ad9bec8fb Description: MOSFET N-CH 100V 130A TO263
Input Capacitance (Ciss) (Max) @ Vds: 5080 pF @ 25 V
Gate Charge (Qg) (Max) @ Vgs: 104 nC @ 10 V
Drain to Source Voltage (Vdss): 100 V
Vgs (Max): ±30V
Drive Voltage (Max Rds On, Min Rds On): 10V
Supplier Device Package: TO-263AA
Vgs(th) (Max) @ Id: 4.5V @ 250µA
Power Dissipation (Max): 360W (Tc)
Rds On (Max) @ Id, Vgs: 9.1mOhm @ 25A, 10V
Current - Continuous Drain (Id) @ 25°C: 130A (Tc)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 175°C (TJ)
Mounting Type: Surface Mount
Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
Packaging: Tape & Reel (TR)
на замовлення 800 шт:
термін постачання 21-31 дні (днів)
800+159.46 грн
Мінімальне замовлення: 800 шт
В кошику  од. на суму  грн.
IXFA4N100Q-TRL IXYS Description: MOSFET N-CH 1000V 4A TO263
Packaging: Tape & Reel (TR)
Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 4A (Tc)
Rds On (Max) @ Id, Vgs: 3Ohm @ 2A, 10V
Power Dissipation (Max): 150W (Tc)
Vgs(th) (Max) @ Id: 4.5V @ 1.5mA
Supplier Device Package: TO-263AA (IXFA)
Part Status: Not For New Designs
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 1000 V
Gate Charge (Qg) (Max) @ Vgs: 39 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 1050 pF @ 25 V
товару немає в наявності
 Мінімальне замовлення: 800 шт
В кошику  од. на суму  грн.
DEIC421 IXYS Description: IC GATE DRVR LOW-SIDE DE275
DigiKey Programmable: Not Verified
Current - Peak Output (Source, Sink): 20A, 20A
Logic Voltage - VIL, VIH: 0.8V, 3.5V
Gate Type: MOSFET (N-Channel, P-Channel)
Number of Drivers: 1
Driven Configuration: Low-Side
Channel Type: Single
Rise / Fall Time (Typ): 3ns, 3ns
Supplier Device Package: 7-SMD
Input Type: Inverting
Voltage - Supply: 8V ~ 30V
Operating Temperature: -40°C ~ 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: 7-SMD, Flat Leads
Packaging: Bulk
товару немає в наявності
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IXFQ60N50P3 IXFQ60N50P3 IXYS DS100311BIXFHFTFQ60N50P3.pdf Description: MOSFET N-CH 500V 60A TO3P
Packaging: Tube
Package / Case: TO-3P-3, SC-65-3
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 60A (Tc)
Rds On (Max) @ Id, Vgs: 100mOhm @ 30A, 10V
Power Dissipation (Max): 1040W (Tc)
Vgs(th) (Max) @ Id: 5V @ 4mA
Supplier Device Package: TO-3P
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±30V
Drain to Source Voltage (Vdss): 500 V
Gate Charge (Qg) (Max) @ Vgs: 96 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 6250 pF @ 25 V
на замовлення 888 шт:
термін постачання 21-31 дні (днів)
1+899.04 грн
30+521.43 грн
120+445.83 грн
510+372.06 грн
В кошику  од. на суму  грн.
IXFT60N50P3 IXFT60N50P3 IXYS DS100311BIXFHFTFQ60N50P3.pdf Description: MOSFET N-CH 500V 60A TO268
Packaging: Tube
Package / Case: TO-268-3, D3PAK (2 Leads + Tab), TO-268AA
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 60A (Tc)
Rds On (Max) @ Id, Vgs: 100mOhm @ 30A, 10V
Power Dissipation (Max): 1040W (Tc)
Vgs(th) (Max) @ Id: 5V @ 4mA
Supplier Device Package: TO-268AA
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±30V
Drain to Source Voltage (Vdss): 500 V
Gate Charge (Qg) (Max) @ Vgs: 96 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 6250 pF @ 25 V
товару немає в наявності
В кошику  од. на суму  грн.
IXFK78N50P3 IXFK78N50P3 IXYS DS100313AIXFKFX78N50P3.pdf Description: MOSFET N-CH 500V 78A TO264AA
Packaging: Tube
Package / Case: TO-264-3, TO-264AA
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 78A (Tc)
Rds On (Max) @ Id, Vgs: 68mOhm @ 500mA, 10V
Power Dissipation (Max): 1130W (Tc)
Vgs(th) (Max) @ Id: 5V @ 4mA
Supplier Device Package: TO-264AA (IXFK)
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±30V
Drain to Source Voltage (Vdss): 500 V
Gate Charge (Qg) (Max) @ Vgs: 147 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 9900 pF @ 25 V
на замовлення 760 шт:
термін постачання 21-31 дні (днів)
1+1915.64 грн
25+1209.38 грн
100+1058.80 грн
500+982.00 грн
В кошику  од. на суму  грн.
IXFQ28N60P3 IXFQ28N60P3 IXYS IXFx28N60P3.pdf Description: MOSFET N-CH 600V 28A TO3P
Packaging: Tube
Package / Case: TO-3P-3, SC-65-3
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 28A (Tc)
Rds On (Max) @ Id, Vgs: 260mOhm @ 14A, 10V
Power Dissipation (Max): 695W (Tc)
Vgs(th) (Max) @ Id: 5V @ 2.5mA
Supplier Device Package: TO-3P
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±30V
Drain to Source Voltage (Vdss): 600 V
Gate Charge (Qg) (Max) @ Vgs: 50 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 3560 pF @ 25 V
на замовлення 420 шт:
термін постачання 21-31 дні (днів)
1+633.32 грн
30+357.21 грн
120+301.73 грн
В кошику  од. на суму  грн.
IXFQ50N60P3 IXFQ50N60P3 IXYS IXFx50N60P3.pdf Description: MOSFET N-CH 600V 50A TO3P
Packaging: Tube
Package / Case: TO-3P-3, SC-65-3
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 50A (Tc)
Rds On (Max) @ Id, Vgs: 160mOhm @ 500mA, 10V
Power Dissipation (Max): 1040W (Tc)
Vgs(th) (Max) @ Id: 5V @ 4mA
Supplier Device Package: TO-3P
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±30V
Drain to Source Voltage (Vdss): 600 V
Gate Charge (Qg) (Max) @ Vgs: 94 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 6300 pF @ 25 V
на замовлення 420 шт:
термін постачання 21-31 дні (днів)
1+897.47 грн
30+520.17 грн
60+479.20 грн
120+417.39 грн
В кошику  од. на суму  грн.
IXFB132N50P3 IXFB132N50P3 IXYS DS100315CIXFB132N50P3.pdf Description: MOSFET N-CH 500V 132A PLUS264
Packaging: Tube
Package / Case: TO-264-3, TO-264AA
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 132A (Tc)
Rds On (Max) @ Id, Vgs: 39mOhm @ 66A, 10V
Power Dissipation (Max): 1890W (Tc)
Vgs(th) (Max) @ Id: 5V @ 8mA
Supplier Device Package: PLUS264™
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±30V
Drain to Source Voltage (Vdss): 500 V
Gate Charge (Qg) (Max) @ Vgs: 250 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 18600 pF @ 25 V
на замовлення 186 шт:
термін постачання 21-31 дні (днів)
1+2261.31 грн
25+1447.47 грн
100+1289.65 грн
В кошику  од. на суму  грн.
IXFH22N60P3 IXFH22N60P3 IXYS IXFx22N60P3.pdf Description: MOSFET N-CH 600V 22A TO247AD
Packaging: Tube
Package / Case: TO-247-3
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 22A (Tc)
Rds On (Max) @ Id, Vgs: 360mOhm @ 11A, 10V
Power Dissipation (Max): 500W (Tc)
Vgs(th) (Max) @ Id: 5V @ 1.5mA
Supplier Device Package: TO-247AD (IXFH)
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±30V
Drain to Source Voltage (Vdss): 600 V
Gate Charge (Qg) (Max) @ Vgs: 38 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 2600 pF @ 25 V
на замовлення 705 шт:
термін постачання 21-31 дні (днів)
1+656.84 грн
30+368.59 грн
60+337.14 грн
120+291.60 грн
510+251.82 грн
В кошику  од. на суму  грн.
IXFP22N60P3 IXFP22N60P3 IXYS IXFx22N60P3.pdf Description: MOSFET N-CH 600V 22A TO220AB
Packaging: Tube
Package / Case: TO-220-3
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 22A (Tc)
Rds On (Max) @ Id, Vgs: 360mOhm @ 11A, 10V
Power Dissipation (Max): 500W (Tc)
Vgs(th) (Max) @ Id: 5V @ 1.5mA
Supplier Device Package: TO-220-3
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±30V
Drain to Source Voltage (Vdss): 600 V
Gate Charge (Qg) (Max) @ Vgs: 38 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 2600 pF @ 25 V
на замовлення 669 шт:
термін постачання 21-31 дні (днів)
1+518.89 грн
10+337.39 грн
50+267.93 грн
100+230.49 грн
500+193.81 грн
В кошику  од. на суму  грн.
IXFQ22N60P3 IXFQ22N60P3 IXYS IXFx22N60P3.pdf Description: MOSFET N-CH 600V 22A TO3P
Packaging: Tube
Package / Case: TO-3P-3, SC-65-3
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 22A (Tc)
Rds On (Max) @ Id, Vgs: 360mOhm @ 11A, 10V
Power Dissipation (Max): 500W (Tc)
Vgs(th) (Max) @ Id: 5V @ 1.5mA
Supplier Device Package: TO-3P
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±30V
Drain to Source Voltage (Vdss): 600 V
Gate Charge (Qg) (Max) @ Vgs: 38 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 2600 pF @ 25 V
на замовлення 840 шт:
термін постачання 21-31 дні (днів)
1+859.84 грн
30+496.85 грн
60+457.37 грн
120+398.06 грн
510+351.29 грн
В кошику  од. на суму  грн.
IXFK80N60P3 IXFK80N60P3 IXYS DS100304BIXFKFX80N60P3.pdf Description: MOSFET N-CH 600V 80A TO264AA
Packaging: Tube
Package / Case: TO-264-3, TO-264AA
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 80A (Tc)
Rds On (Max) @ Id, Vgs: 70mOhm @ 500mA, 10V
Power Dissipation (Max): 1300W (Tc)
Vgs(th) (Max) @ Id: 5V @ 8mA
Supplier Device Package: TO-264AA (IXFK)
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±30V
Drain to Source Voltage (Vdss): 600 V
Gate Charge (Qg) (Max) @ Vgs: 190 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 13100 pF @ 25 V
на замовлення 41 шт:
термін постачання 21-31 дні (днів)
1+1673.44 грн
25+1044.59 грн
В кошику  од. на суму  грн.
IXFX80N60P3 IXFX80N60P3 IXYS DS100304BIXFKFX80N60P3.pdf Description: MOSFET N-CH 600V 80A PLUS247-3
Packaging: Tube
Package / Case: TO-247-3 Variant
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 80A (Tc)
Rds On (Max) @ Id, Vgs: 70mOhm @ 500mA, 10V
Power Dissipation (Max): 1300W (Tc)
Vgs(th) (Max) @ Id: 5V @ 8mA
Supplier Device Package: PLUS247™-3
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±30V
Drain to Source Voltage (Vdss): 600 V
Gate Charge (Qg) (Max) @ Vgs: 190 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 13100 pF @ 25 V
на замовлення 188 шт:
термін постачання 21-31 дні (днів)
1+1664.04 грн
30+1017.93 грн
120+890.15 грн
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IXFN110N60P3 IXFN110N60P3 IXYS DS100305BIXFN110N60P3.pdf Description: MOSFET N-CH 600V 90A SOT227B
Packaging: Tube
Package / Case: SOT-227-4, miniBLOC
Mounting Type: Chassis Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 90A (Tc)
Rds On (Max) @ Id, Vgs: 56mOhm @ 55A, 10V
Power Dissipation (Max): 1500W (Tc)
Vgs(th) (Max) @ Id: 5V @ 8mA
Supplier Device Package: SOT-227B
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±30V
Drain to Source Voltage (Vdss): 600 V
Gate Charge (Qg) (Max) @ Vgs: 245 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 18000 pF @ 25 V
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IXYH82N120C3 IXYH82N120C3 IXYS littelfuse-discrete-igbts-ixyh82n120c3-datasheet?assetguid=d0b3d648-a754-4e63-a7a2-de89dbf9c1f6 Description: IGBT 1200V 200A TO-247
Packaging: Tube
Package / Case: TO-247-3
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 175°C (TJ)
Input Type: Standard
Vce(on) (Max) @ Vge, Ic: 3.2V @ 15V, 82A
Supplier Device Package: TO-247 (IXYH)
Td (on/off) @ 25°C: 29ns/192ns
Switching Energy: 4.95mJ (on), 2.78mJ (off)
Test Condition: 600V, 80A, 2Ohm, 15V
Gate Charge: 215 nC
Part Status: Active
Current - Collector (Ic) (Max): 200 A
Voltage - Collector Emitter Breakdown (Max): 1200 V
Current - Collector Pulsed (Icm): 380 A
Power - Max: 1250 W
на замовлення 822 шт:
термін постачання 21-31 дні (днів)
1+1307.40 грн
30+790.26 грн
120+708.87 грн
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IXYN82N120C3H1 IXYN82N120C3H1 IXYS littelfusediscreteigbtsxptixyn82n120c3h1datas.pdf Description: IGBT MODULE 1200V 105A SOT-227B
Packaging: Tube
Package / Case: SOT-227-4, miniBLOC
Mounting Type: Chassis Mount
Input: Standard
Configuration: Single
Operating Temperature: -55°C ~ 150°C (TJ)
Vce(on) (Max) @ Vge, Ic: 3.2V @ 15V, 82A
NTC Thermistor: No
Supplier Device Package: SOT-227B
Part Status: Active
Current - Collector (Ic) (Max): 105 A
Voltage - Collector Emitter Breakdown (Max): 1200 V
Power - Max: 500 W
Current - Collector Cutoff (Max): 50 µA
Input Capacitance (Cies) @ Vce: 4.06 nF @ 25 V
на замовлення 243 шт:
термін постачання 21-31 дні (днів)
1+2281.86 грн
10+1624.78 грн
100+1431.71 грн
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IXYB82N120C3H1 IXYB82N120C3H1 IXYS littelfuse_discrete_igbts_xpt_ixyb82n120c3h1_datasheet.pdf.pdf Description: IGBT 1200V 164A 1040W PLUS264
Power - Max: 1040 W
Current - Collector Pulsed (Icm): 320 A
Voltage - Collector Emitter Breakdown (Max): 1200 V
Current - Collector (Ic) (Max): 164 A
Part Status: Active
Gate Charge: 215 nC
Test Condition: 600V, 80A, 2Ohm, 15V
Td (on/off) @ 25°C: 29ns/192ns
Supplier Device Package: PLUS264™
Vce(on) (Max) @ Vge, Ic: 3.2V @ 15V, 82A
Reverse Recovery Time (trr): 420 ns
Input Type: Standard
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Through Hole
Package / Case: TO-264-3, TO-264AA
Packaging: Tube
Switching Energy: 4.95mJ (on), 2.78mJ (off)
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SLMD121H4 SLMD121H4 IXYS 20110107-SLMD121H04-DATA-SHEET.pdf Description: MONO SOLAR CELL 43MM X 14MM
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SLMD121H8L SLMD121H8L IXYS 20110107-SLMD121H08-DATA-SHEET.pdf Description: MONO SOLAR CELL 86MM X 14MM
на замовлення 167 шт:
термін постачання 21-31 дні (днів)
В кошику  од. на суму  грн.
SLMD600H10 SLMD600H10 IXYS 20110107-SLMD600H10-DATA-SHEET.pdf Description: MONO SOLAR CELL 22MM X 35MM
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SLMD960H12 SLMD960H12 IXYS 20110107-SLMD960H12-SLMD4235-DATA-SHEET.pdf Description: MONO SOLAR CELL 42MM X 35MM
на замовлення 652 шт:
термін постачання 21-31 дні (днів)
В кошику  од. на суму  грн.
SLMD121H10 SLMD121H10 IXYS 20110107-SLMD121H10-DATA-SHEET.pdf Description: MONO SOLAR CELL 42MM X 35MM
товару немає в наявності
 Мінімальне замовлення: 25 шт
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SLMD481H08 SLMD481H08 IXYS 20110107-SLMD121H08-DATA-SHEET.pdf Description: MONO SOLAR CELL 86MM X 14MM
на замовлення 152 шт:
термін постачання 21-31 дні (днів)
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SLMD481H10 SLMD481H10 IXYS 20111214-SLMD481H10-DATA-SHEET.pdf Description: MONO SOLAR CELL 89MM X 67MM
на замовлення 28 шт:
термін постачання 21-31 дні (днів)
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SLMD481H12 SLMD481H12 IXYS 20111214-SLMD481H12-DATA-SHEET.pdf Description: MONO SOLAR CELL 90MM X 79MM
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IXFT70N20Q3 IXFT70N20Q3 IXYS Description: MOSFET N-CH 200V 70A TO268
Packaging: Tube
Package / Case: TO-268-3, D3PAK (2 Leads + Tab), TO-268AA
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 70A (Tc)
Rds On (Max) @ Id, Vgs: 40mOhm @ 35A, 10V
Power Dissipation (Max): 690W (Tc)
Vgs(th) (Max) @ Id: 6.5V @ 4mA
Supplier Device Package: TO-268AA
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 200 V
Gate Charge (Qg) (Max) @ Vgs: 67 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 3150 pF @ 25 V
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IXTH440N055T2 littelfuse-discrete-mosfets-ixt-440n055t2-datasheet?assetguid=6586e5ca-cda3-411d-bbe5-f50ff4a13d25
IXTH440N055T2
Виробник: IXYS
Description: MOSFET N-CH 55V 440A TO247
Packaging: Tube
Package / Case: TO-247-3
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 440A (Tc)
Rds On (Max) @ Id, Vgs: 1.8mOhm @ 100A, 10V
Power Dissipation (Max): 1000W (Tc)
Vgs(th) (Max) @ Id: 4V @ 250µA
Supplier Device Package: TO-247 (IXTH)
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 55 V
Gate Charge (Qg) (Max) @ Vgs: 405 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 25000 pF @ 25 V
товару немає в наявності
Мінімальне замовлення: 300 шт
В кошику  од. на суму  грн.
IXTH500N04T2 littelfuse_discrete_mosfets_n-channel_trench_gate_ixt_500n04t2_datasheet.pdf.pdf
IXTH500N04T2
Виробник: IXYS
Description: MOSFET N-CH 40V 500A TO247
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IXTK550N055T2 littelfuse_discrete_mosfets_n-channel_trench_gate_ixt_550n055t2_datasheet.pdf.pdf
IXTK550N055T2
Виробник: IXYS
Description: MOSFET N-CH 55V 550A TO264
Packaging: Tube
Package / Case: TO-264-3, TO-264AA
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 550A (Tc)
Rds On (Max) @ Id, Vgs: 1.6mOhm @ 100A, 10V
Power Dissipation (Max): 1250W (Tc)
Vgs(th) (Max) @ Id: 4V @ 250µA
Supplier Device Package: TO-264 (IXTK)
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 55 V
Gate Charge (Qg) (Max) @ Vgs: 595 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 40000 pF @ 25 V
товару немає в наявності
Мінімальне замовлення: 300 шт
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IXTK600N04T2 DS100209IXTKTX600N04T2.pdf
IXTK600N04T2
Виробник: IXYS
Description: MOSFET N-CH 40V 600A TO264
Packaging: Tube
Package / Case: TO-264-3, TO-264AA
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 600A (Tc)
Rds On (Max) @ Id, Vgs: 1.5mOhm @ 100A, 10V
Power Dissipation (Max): 1250W (Tc)
Vgs(th) (Max) @ Id: 3.5V @ 250µA
Supplier Device Package: TO-264 (IXTK)
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 40 V
Gate Charge (Qg) (Max) @ Vgs: 590 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 40000 pF @ 25 V
товару немає в наявності
Мінімальне замовлення: 300 шт
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IXTN110N20L2 littelfuse-discrete-mosfets-ixtn110n20-datasheet?assetguid=880d095b-d731-445d-a39f-6ab5b5030060
IXTN110N20L2
Виробник: IXYS
Description: MOSFET N-CH 200V 100A SOT227B
Packaging: Tube
Package / Case: SOT-227-4, miniBLOC
Mounting Type: Chassis Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 100A (Tc)
Rds On (Max) @ Id, Vgs: 24mOhm @ 55A, 10V
Power Dissipation (Max): 735W (Tc)
Vgs(th) (Max) @ Id: 4.5V @ 3mA
Supplier Device Package: SOT-227B
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 200 V
Gate Charge (Qg) (Max) @ Vgs: 500 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 23000 pF @ 25 V
на замовлення 10 шт:
термін постачання 21-31 дні (днів)
КількістьЦіна без ПДВ
1+4028.02 грн
В кошику  од. на суму  грн.
IXTN200N10T littelfuse-discrete-mosfets-ixtn200n10t-datasheet?assetguid=c78c43fa-9c23-4a31-a344-9f883b414062
IXTN200N10T
Виробник: IXYS
Description: MOSFET N-CH 100V 200A SOT227B
Packaging: Tube
Package / Case: SOT-227-4, miniBLOC
Mounting Type: Chassis Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 200A (Tc)
Rds On (Max) @ Id, Vgs: 5.5mOhm @ 50A, 10V
Power Dissipation (Max): 550W (Tc)
Vgs(th) (Max) @ Id: 4.5V @ 250µA
Supplier Device Package: SOT-227B
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 100 V
Gate Charge (Qg) (Max) @ Vgs: 152 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 9400 pF @ 25 V
на замовлення 342 шт:
термін постачання 21-31 дні (днів)
КількістьЦіна без ПДВ
1+2969.87 грн
10+2139.13 грн
100+1826.07 грн
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IXTN550N055T2 littelfuse_discrete_mosfets_n-channel_trench_gate_ixtn550n055t2_datasheet.pdf.pdf
IXTN550N055T2
Виробник: IXYS
Description: MOSFET N-CH 55V 550A SOT227B
Packaging: Tube
Package / Case: SOT-227-4, miniBLOC
Mounting Type: Chassis Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 550A (Tc)
Rds On (Max) @ Id, Vgs: 1.3mOhm @ 100A, 10V
Power Dissipation (Max): 940W (Tc)
Vgs(th) (Max) @ Id: 4V @ 250µA
Supplier Device Package: SOT-227B
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 55 V
Gate Charge (Qg) (Max) @ Vgs: 595 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 40000 pF @ 25 V
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IXTP14N60PM littelfuse-discrete-mosfets-ixtp14n60pm-datasheet?assetguid=390cf4a8-b7e8-49bc-89a4-fa61e050fda9
IXTP14N60PM
Виробник: IXYS
Description: MOSFET N-CH 600V 7A TO220
Packaging: Tube
Package / Case: TO-220-3 Full Pack, Isolated Tab
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 7A (Tc)
Rds On (Max) @ Id, Vgs: 550mOhm @ 7A, 10V
Power Dissipation (Max): 75W (Tc)
Vgs(th) (Max) @ Id: 5.5V @ 250µA
Supplier Device Package: TO-220 Isolated Tab
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±30V
Drain to Source Voltage (Vdss): 600 V
Gate Charge (Qg) (Max) @ Vgs: 36 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 2500 pF @ 25 V
товару немає в наявності
Мінімальне замовлення: 300 шт
В кошику  од. на суму  грн.
IXTQ50N25T littelfuse-discrete-mosfets-ixt-50n25t-datasheet?assetguid=d7f19b2b-0219-4b0c-a29d-b093518ee586
IXTQ50N25T
Виробник: IXYS
Description: MOSFET N-CH 250V 50A TO3P
Packaging: Tube
Package / Case: TO-3P-3, SC-65-3
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 50A (Tc)
Rds On (Max) @ Id, Vgs: 60mOhm @ 25A, 10V
Power Dissipation (Max): 400W (Tc)
Vgs(th) (Max) @ Id: 5V @ 1mA
Supplier Device Package: TO-3P
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±30V
Drain to Source Voltage (Vdss): 250 V
Gate Charge (Qg) (Max) @ Vgs: 78 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 4000 pF @ 25 V
на замовлення 620 шт:
термін постачання 21-31 дні (днів)
КількістьЦіна без ПДВ
1+614.51 грн
30+345.57 грн
120+291.46 грн
510+236.34 грн
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IXTQ60N20L2 littelfuse-discrete-mosfets-ixt-60n20-datasheet?assetguid=963578f0-6c06-4c5b-abb1-606983fd5867
IXTQ60N20L2
Виробник: IXYS
Description: MOSFET N-CH 200V 60A TO3P
Packaging: Tube
Package / Case: TO-3P-3, SC-65-3
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 60A (Tc)
Rds On (Max) @ Id, Vgs: 45mOhm @ 30A, 10V
Power Dissipation (Max): 540W (Tc)
Vgs(th) (Max) @ Id: 4.5V @ 250µA
Supplier Device Package: TO-3P
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 200 V
Gate Charge (Qg) (Max) @ Vgs: 255 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 10500 pF @ 25 V
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IXTT60N20L2 littelfuse-discrete-mosfets-ixt-60n20-datasheet?assetguid=963578f0-6c06-4c5b-abb1-606983fd5867
IXTT60N20L2
Виробник: IXYS
Description: MOSFET N-CH 200V 60A TO268
Packaging: Tube
Package / Case: TO-268-3, D3PAK (2 Leads + Tab), TO-268AA
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 60A (Tc)
Rds On (Max) @ Id, Vgs: 45mOhm @ 30A, 10V
Power Dissipation (Max): 540W (Tc)
Vgs(th) (Max) @ Id: 4.5V @ 250µA
Supplier Device Package: TO-268AA
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 200 V
Gate Charge (Qg) (Max) @ Vgs: 255 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 10500 pF @ 25 V
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IXTT75N10L2 littelfuse_discrete_mosfets_n-channel_linear_ixt_75n10_datasheet.pdf.pdf
IXTT75N10L2
Виробник: IXYS
Description: MOSFET N-CH 100V 75A TO268
Packaging: Tube
Package / Case: TO-268-3, D3PAK (2 Leads + Tab), TO-268AA
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 75A (Tc)
Rds On (Max) @ Id, Vgs: 21mOhm @ 500mA, 10V
Power Dissipation (Max): 400W (Tc)
Vgs(th) (Max) @ Id: 4.5V @ 250µA
Supplier Device Package: TO-268AA
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 100 V
Gate Charge (Qg) (Max) @ Vgs: 215 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 8100 pF @ 25 V
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IXTT75N20L2
IXTT75N20L2
Виробник: IXYS
Description: MOSFET N-CH 200V 75A DPAK
Packaging: Tube
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IXTX600N04T2 DS100209IXTKTX600N04T2.pdf
IXTX600N04T2
Виробник: IXYS
Description: MOSFET N-CH 40V 600A PLUS247-3
Packaging: Tube
Package / Case: TO-247-3 Variant
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 600A (Tc)
Rds On (Max) @ Id, Vgs: 1.5mOhm @ 100A, 10V
Power Dissipation (Max): 1250W (Tc)
Vgs(th) (Max) @ Id: 3.5V @ 250µA
Supplier Device Package: PLUS247™-3
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 40 V
Gate Charge (Qg) (Max) @ Vgs: 590 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 40000 pF @ 25 V
товару немає в наявності
Мінімальне замовлення: 300 шт
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IXTX8N150L littelfuse_discrete_mosfets_n-channel_linear_ixt_8n150l_datasheet.pdf.pdf
IXTX8N150L
Виробник: IXYS
Description: MOSFET N-CH 1500V 8A PLUS247-3
Packaging: Tube
Package / Case: TO-247-3 Variant
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 8A (Tc)
Rds On (Max) @ Id, Vgs: 3.6Ohm @ 4A, 20V
Power Dissipation (Max): 700W (Tc)
Vgs(th) (Max) @ Id: 8V @ 250µA
Supplier Device Package: PLUS247™-3
Drive Voltage (Max Rds On, Min Rds On): 20V
Vgs (Max): ±30V
Drain to Source Voltage (Vdss): 1500 V
Gate Charge (Qg) (Max) @ Vgs: 250 nC @ 15 V
Input Capacitance (Ciss) (Max) @ Vds: 8000 pF @ 25 V
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IXTY02N120P littelfuse-discrete-mosfets-ixt-02n120p-datasheet?assetguid=28c53e8f-de75-400b-95e2-28ff1adfa0e0
IXTY02N120P
Виробник: IXYS
Description: MOSFET N-CH 1200V 200MA TO252
Packaging: Tube
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 200mA (Tc)
Rds On (Max) @ Id, Vgs: 75Ohm @ 500mA, 10V
Power Dissipation (Max): 33W (Tc)
Vgs(th) (Max) @ Id: 4V @ 100µA
Supplier Device Package: TO-252AA
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 1200 V
Gate Charge (Qg) (Max) @ Vgs: 4.7 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 104 pF @ 25 V
на замовлення 4625 шт:
термін постачання 21-31 дні (днів)
КількістьЦіна без ПДВ
2+257.88 грн
70+118.76 грн
140+107.78 грн
560+85.20 грн
1050+79.59 грн
2030+74.59 грн
Мінімальне замовлення: 2 шт
В кошику  од. на суму  грн.
IXFP180N10T2 IXF%28A%2CP%29180N10T2.pdf
IXFP180N10T2
Виробник: IXYS
Description: MOSFET N-CH 100V 180A TO220AB
Packaging: Tube
Package / Case: TO-220-3
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 180A (Tc)
Rds On (Max) @ Id, Vgs: 6mOhm @ 50A, 10V
Power Dissipation (Max): 480W (Tc)
Vgs(th) (Max) @ Id: 4V @ 250µA
Supplier Device Package: TO-220-3
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 100 V
Gate Charge (Qg) (Max) @ Vgs: 185 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 10500 pF @ 25 V
на замовлення 318 шт:
термін постачання 21-31 дні (днів)
КількістьЦіна без ПДВ
1+609.02 грн
50+319.85 грн
100+294.09 грн
В кошику  од. на суму  грн.
IXGH90N60B3 DS99994(IXGH90N60B3).pdf
IXGH90N60B3
Виробник: IXYS
Description: IGBT 600V 75A 660W TO247
товару немає в наявності
В кошику  од. на суму  грн.
IXGP20N120B3 littelfuse-discrete-igbts-ixg-20n120b3-datasheet?assetguid=def4a3cc-20a8-4c45-8af2-ba8dcd0c72ff
IXGP20N120B3
Виробник: IXYS
Description: IGBT PT 1200V 36A TO-220-3
Packaging: Tube
Package / Case: TO-220-3
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Input Type: Standard
Vce(on) (Max) @ Vge, Ic: 3.1V @ 15V, 16A
Supplier Device Package: TO-220-3
IGBT Type: PT
Td (on/off) @ 25°C: 16ns/150ns
Switching Energy: 920µJ (on), 560µJ (off)
Test Condition: 600V, 16A, 15Ohm, 15V
Gate Charge: 51 nC
Part Status: Active
Current - Collector (Ic) (Max): 36 A
Voltage - Collector Emitter Breakdown (Max): 1200 V
Current - Collector Pulsed (Icm): 80 A
Power - Max: 180 W
на замовлення 165 шт:
термін постачання 21-31 дні (днів)
КількістьЦіна без ПДВ
1+609.81 грн
50+320.45 грн
100+294.71 грн
В кошику  од. на суму  грн.
IXGX120N60C2 DS99515A(IXGK-GX120N60C2).pdf
IXGX120N60C2
Виробник: IXYS
Description: IGBT 600V 75A 830W PLUS TO-247
Packaging: Tube
Package / Case: TO-247-3 Variant
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Input Type: Standard
Vce(on) (Max) @ Vge, Ic: 2.5V @ 15V, 100A
Supplier Device Package: PLUS247™-3
Td (on/off) @ 25°C: 40ns/120ns
Switching Energy: 1.7mJ (on), 1mJ (off)
Test Condition: 400V, 80A, 1Ohm, 15V
Gate Charge: 370 nC
Part Status: Obsolete
Current - Collector (Ic) (Max): 75 A
Voltage - Collector Emitter Breakdown (Max): 600 V
Current - Collector Pulsed (Icm): 500 A
Power - Max: 830 W
товару немає в наявності
В кошику  од. на суму  грн.
IXTY1N80P DS100112(IXTA-TP-TU-TY1N80P).pdf
IXTY1N80P
Виробник: IXYS
Description: MOSFET N-CH 800V 1A TO252
товару немає в наявності
Мінімальне замовлення: 70 шт
В кошику  од. на суму  грн.
IXTZ550N055T2
Виробник: IXYS
Description: MOSFET N-CH 55V 550A DE475
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 175°C (TJ)
Mounting Type: Surface Mount
Package / Case: 6-SMD, Flat Leads
Packaging: Tube
Input Capacitance (Ciss) (Max) @ Vds: 40000 pF @ 25 V
Gate Charge (Qg) (Max) @ Vgs: 595 nC @ 10 V
Drain to Source Voltage (Vdss): 55 V
Vgs (Max): ±20V
Drive Voltage (Max Rds On, Min Rds On): 10V
Part Status: Active
Supplier Device Package: DE475
Vgs(th) (Max) @ Id: 4V @ 250µA
Power Dissipation (Max): 600W (Tc)
Rds On (Max) @ Id, Vgs: 1mOhm @ 100A, 10V
Current - Continuous Drain (Id) @ 25°C: 550A (Tc)
товару немає в наявності
Мінімальне замовлення: 300 шт
В кошику  од. на суму  грн.
IXTF1N400 DS100159D(IXTF1N400).pdf
IXTF1N400
Виробник: IXYS
Description: MOSFET N-CH 4000V 1A ISOPLUS I4
товару немає в наявності
Мінімальне замовлення: 25 шт
В кошику  од. на суму  грн.
IXTH16N10D2 littelfuse-discrete-mosfets-ixt-16n10-datasheet?assetguid=f6744185-82d5-4569-a65f-4b44e1fa3704
IXTH16N10D2
Виробник: IXYS
Description: MOSFET N-CH 100V 16A TO247
Input Capacitance (Ciss) (Max) @ Vds: 5700 pF @ 25 V
Gate Charge (Qg) (Max) @ Vgs: 225 nC @ 5 V
Drain to Source Voltage (Vdss): 100 V
Vgs (Max): ±20V
Drive Voltage (Max Rds On, Min Rds On): 0V
Part Status: Active
Supplier Device Package: TO-247 (IXTH)
Power Dissipation (Max): 830W (Tc)
Rds On (Max) @ Id, Vgs: 64mOhm @ 8A, 0V
Current - Continuous Drain (Id) @ 25°C: 16A (Tc)
FET Type: N-Channel, Depletion Mode
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 175°C (TJ)
Mounting Type: Through Hole
Package / Case: TO-247-3
Packaging: Tube
товару немає в наявності
Мінімальне замовлення: 300 шт
В кошику  од. на суму  грн.
IXTH16N50D2 littelfuse-discrete-mosfets-ixt-3n100-datasheet?assetguid=f0dbe4a2-4395-4958-a595-7cdc8d2662e1
IXTH16N50D2
Виробник: IXYS
Description: MOSFET N-CH 500V 16A TO247-3
Packaging: Tube
Package / Case: TO-247-3
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel, Depletion Mode
Current - Continuous Drain (Id) @ 25°C: 16A (Tc)
Rds On (Max) @ Id, Vgs: 240mOhm @ 8A, 0V
Power Dissipation (Max): 695W (Tc)
Supplier Device Package: TO-247 (IXTH)
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 0V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 500 V
Gate Charge (Qg) (Max) @ Vgs: 199 nC @ 5 V
Input Capacitance (Ciss) (Max) @ Vds: 5250 pF @ 25 V
на замовлення 788 шт:
термін постачання 21-31 дні (днів)
КількістьЦіна без ПДВ
1+1409.30 грн
30+849.71 грн
60+789.40 грн
120+693.25 грн
510+664.95 грн
В кошику  од. на суму  грн.
IXTT16N10D2 littelfuse-discrete-mosfets-ixt-16n10-datasheet?assetguid=f6744185-82d5-4569-a65f-4b44e1fa3704
IXTT16N10D2
Виробник: IXYS
Description: MOSFET N-CH 100V 16A TO268
Input Capacitance (Ciss) (Max) @ Vds: 5700 pF @ 25 V
Gate Charge (Qg) (Max) @ Vgs: 225 nC @ 5 V
Drain to Source Voltage (Vdss): 100 V
Vgs (Max): ±20V
Drive Voltage (Max Rds On, Min Rds On): 0V
Part Status: Active
Supplier Device Package: TO-268AA
Current - Continuous Drain (Id) @ 25°C: 16A (Tc)
FET Type: N-Channel, Depletion Mode
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 175°C (TJ)
Mounting Type: Surface Mount
Package / Case: TO-268-3, D3PAK (2 Leads + Tab), TO-268AA
Packaging: Tube
Power Dissipation (Max): 830W (Tc)
Rds On (Max) @ Id, Vgs: 64mOhm @ 8A, 0V
товару немає в наявності
Мінімальне замовлення: 300 шт
В кошику  од. на суму  грн.
IXGF30N400 littelfuse_discrete_igbts_npt_ixgf30n400_datasheet.pdf.pdf
IXGF30N400
Виробник: IXYS
Description: IGBT 4000V 30A 160W I4-PAK
товару немає в наявності
Мінімальне замовлення: 25 шт
В кошику  од. на суму  грн.
IXXK100N60B3H1 IXXK%2CX100N60B3H1.pdf
IXXK100N60B3H1
Виробник: IXYS
Description: IGBT PT 600V 200A TO264
Power - Max: 695 W
Current - Collector Pulsed (Icm): 440 A
Voltage - Collector Emitter Breakdown (Max): 600 V
Current - Collector (Ic) (Max): 200 A
Gate Charge: 143 nC
Test Condition: 360V, 70A, 2Ohm, 15V
Switching Energy: 1.9mJ (on), 2mJ (off)
Td (on/off) @ 25°C: 30ns/120ns
IGBT Type: PT
Supplier Device Package: TO-264 (IXXK)
Vce(on) (Max) @ Vge, Ic: 1.8V @ 15V, 70A
Reverse Recovery Time (trr): 140 ns
Input Type: Standard
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Through Hole
Package / Case: TO-264-3, TO-264AA
Packaging: Tube
на замовлення 169 шт:
термін постачання 21-31 дні (днів)
КількістьЦіна без ПДВ
1+1531.57 грн
25+1001.24 грн
100+981.89 грн
В кошику  од. на суму  грн.
IXXH100N60B3 littelfuse_discrete_igbts_xpt_ixxh100n60b3_datasheet.pdf.pdf
IXXH100N60B3
Виробник: IXYS
Description: IGBT 600V 220A 830W TO247AD
Power - Max: 830 W
Current - Collector Pulsed (Icm): 480 A
Voltage - Collector Emitter Breakdown (Max): 600 V
Current - Collector (Ic) (Max): 220 A
Gate Charge: 143 nC
Test Condition: 360V, 70A, 2Ohm, 15V
Switching Energy: 1.9mJ (on), 2mJ (off)
Td (on/off) @ 25°C: 30ns/120ns
IGBT Type: PT
Supplier Device Package: TO-247AD (IXXH)
Vce(on) (Max) @ Vge, Ic: 1.8V @ 15V, 70A
Input Type: Standard
Operating Temperature: -55°C ~ 175°C (TJ)
Mounting Type: Through Hole
Package / Case: TO-247-3
Packaging: Tube
на замовлення 298 шт:
термін постачання 21-31 дні (днів)
КількістьЦіна без ПДВ
1+877.87 грн
30+539.22 грн
120+487.21 грн
В кошику  од. на суму  грн.
IXXH50N60C3 littelfuse-discrete-igbts-ixxh50n60c3-datasheet?assetguid=cba71091-b144-4329-b000-bbf5206ce5e3
IXXH50N60C3
Виробник: IXYS
Description: IGBT PT 600V 100A TO-247AD
Packaging: Tube
Package / Case: TO-247-3
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 175°C (TJ)
Input Type: Standard
Vce(on) (Max) @ Vge, Ic: 2.3V @ 15V, 36A
Supplier Device Package: TO-247AD (IXXH)
IGBT Type: PT
Td (on/off) @ 25°C: 24ns/62ns
Switching Energy: 720µJ (on), 330µJ (off)
Test Condition: 360V, 36A, 5Ohm, 15V
Gate Charge: 64 nC
Current - Collector (Ic) (Max): 100 A
Voltage - Collector Emitter Breakdown (Max): 600 V
Current - Collector Pulsed (Icm): 200 A
Power - Max: 600 W
товару немає в наявності
Мінімальне замовлення: 300 шт
В кошику  од. на суму  грн.
IXXH50N60C3D1 littelfuse-discrete-igbts-ixxh50n60c3d1-datasheet?assetguid=f95c77ee-e30c-40a0-add2-d813f16ccfd2
IXXH50N60C3D1
Виробник: IXYS
Description: IGBT PT 600V 100A TO-247AD
Packaging: Tube
Package / Case: TO-247-3
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 175°C (TJ)
Input Type: Standard
Reverse Recovery Time (trr): 25 ns
Vce(on) (Max) @ Vge, Ic: 2.3V @ 15V, 36A
Supplier Device Package: TO-247AD (IXXH)
IGBT Type: PT
Td (on/off) @ 25°C: 24ns/62ns
Switching Energy: 720µJ (on), 330µJ (off)
Test Condition: 360V, 36A, 5Ohm, 15V
Gate Charge: 64 nC
Part Status: Active
Current - Collector (Ic) (Max): 100 A
Voltage - Collector Emitter Breakdown (Max): 600 V
Current - Collector Pulsed (Icm): 200 A
Power - Max: 600 W
товару немає в наявності
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IXXH100N60C3 littelfuse_discrete_igbts_xpt_ixxh100n60c3_datasheet.pdf.pdf
IXXH100N60C3
Виробник: IXYS
Description: IGBT 600V 190A 830W TO247AD
Supplier Device Package: TO-247AD (IXXH)
Vce(on) (Max) @ Vge, Ic: 2.2V @ 15V, 70A
Input Type: Standard
Operating Temperature: -55°C ~ 175°C (TJ)
Mounting Type: Through Hole
Package / Case: TO-247-3
Packaging: Tube
Power - Max: 830 W
Current - Collector Pulsed (Icm): 380 A
Voltage - Collector Emitter Breakdown (Max): 600 V
Current - Collector (Ic) (Max): 190 A
Part Status: Active
Gate Charge: 150 nC
Test Condition: 360V, 70A, 2Ohm, 15V
Switching Energy: 2mJ (on), 950µJ (off)
Td (on/off) @ 25°C: 30ns/90ns
IGBT Type: PT
на замовлення 19 шт:
термін постачання 21-31 дні (днів)
КількістьЦіна без ПДВ
1+837.11 грн
В кошику  од. на суму  грн.
IXXK100N60C3H1 DS100283BIXXKX100N60C3H1.pdf
IXXK100N60C3H1
Виробник: IXYS
Description: IGBT PT 600V 170A TO-264
Power - Max: 695 W
Current - Collector Pulsed (Icm): 340 A
Voltage - Collector Emitter Breakdown (Max): 600 V
Current - Collector (Ic) (Max): 170 A
Part Status: Active
Gate Charge: 150 nC
Test Condition: 360V, 70A, 2Ohm, 15V
Switching Energy: 2mJ (on), 950µJ (off)
Td (on/off) @ 25°C: 30ns/90ns
IGBT Type: PT
Supplier Device Package: TO-264 (IXXK)
Vce(on) (Max) @ Vge, Ic: 2.2V @ 15V, 70A
Reverse Recovery Time (trr): 140 ns
Input Type: Standard
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Through Hole
Package / Case: TO-264-3, TO-264AA
Packaging: Tube
на замовлення 133 шт:
термін постачання 21-31 дні (днів)
КількістьЦіна без ПДВ
1+2055.16 грн
25+1305.87 грн
100+1156.87 грн
В кошику  од. на суму  грн.
IXTA130N10T-TRL littelfuse-discrete-mosfets-ixt-130n10t-1of2-datasheet?assetguid=35a29cb3-cabc-48a7-80a0-8b3ad9bec8fb
IXTA130N10T-TRL
Виробник: IXYS
Description: MOSFET N-CH 100V 130A TO263
Input Capacitance (Ciss) (Max) @ Vds: 5080 pF @ 25 V
Gate Charge (Qg) (Max) @ Vgs: 104 nC @ 10 V
Drain to Source Voltage (Vdss): 100 V
Vgs (Max): ±30V
Drive Voltage (Max Rds On, Min Rds On): 10V
Supplier Device Package: TO-263AA
Vgs(th) (Max) @ Id: 4.5V @ 250µA
Power Dissipation (Max): 360W (Tc)
Rds On (Max) @ Id, Vgs: 9.1mOhm @ 25A, 10V
Current - Continuous Drain (Id) @ 25°C: 130A (Tc)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 175°C (TJ)
Mounting Type: Surface Mount
Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
Packaging: Tape & Reel (TR)
на замовлення 800 шт:
термін постачання 21-31 дні (днів)
КількістьЦіна без ПДВ
800+159.46 грн
Мінімальне замовлення: 800 шт
В кошику  од. на суму  грн.
IXFA4N100Q-TRL
Виробник: IXYS
Description: MOSFET N-CH 1000V 4A TO263
Packaging: Tape & Reel (TR)
Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 4A (Tc)
Rds On (Max) @ Id, Vgs: 3Ohm @ 2A, 10V
Power Dissipation (Max): 150W (Tc)
Vgs(th) (Max) @ Id: 4.5V @ 1.5mA
Supplier Device Package: TO-263AA (IXFA)
Part Status: Not For New Designs
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 1000 V
Gate Charge (Qg) (Max) @ Vgs: 39 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 1050 pF @ 25 V
товару немає в наявності
Мінімальне замовлення: 800 шт
В кошику  од. на суму  грн.
DEIC421
Виробник: IXYS
Description: IC GATE DRVR LOW-SIDE DE275
DigiKey Programmable: Not Verified
Current - Peak Output (Source, Sink): 20A, 20A
Logic Voltage - VIL, VIH: 0.8V, 3.5V
Gate Type: MOSFET (N-Channel, P-Channel)
Number of Drivers: 1
Driven Configuration: Low-Side
Channel Type: Single
Rise / Fall Time (Typ): 3ns, 3ns
Supplier Device Package: 7-SMD
Input Type: Inverting
Voltage - Supply: 8V ~ 30V
Operating Temperature: -40°C ~ 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: 7-SMD, Flat Leads
Packaging: Bulk
товару немає в наявності
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IXFQ60N50P3 DS100311BIXFHFTFQ60N50P3.pdf
IXFQ60N50P3
Виробник: IXYS
Description: MOSFET N-CH 500V 60A TO3P
Packaging: Tube
Package / Case: TO-3P-3, SC-65-3
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 60A (Tc)
Rds On (Max) @ Id, Vgs: 100mOhm @ 30A, 10V
Power Dissipation (Max): 1040W (Tc)
Vgs(th) (Max) @ Id: 5V @ 4mA
Supplier Device Package: TO-3P
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±30V
Drain to Source Voltage (Vdss): 500 V
Gate Charge (Qg) (Max) @ Vgs: 96 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 6250 pF @ 25 V
на замовлення 888 шт:
термін постачання 21-31 дні (днів)
КількістьЦіна без ПДВ
1+899.04 грн
30+521.43 грн
120+445.83 грн
510+372.06 грн
В кошику  од. на суму  грн.
IXFT60N50P3 DS100311BIXFHFTFQ60N50P3.pdf
IXFT60N50P3
Виробник: IXYS
Description: MOSFET N-CH 500V 60A TO268
Packaging: Tube
Package / Case: TO-268-3, D3PAK (2 Leads + Tab), TO-268AA
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 60A (Tc)
Rds On (Max) @ Id, Vgs: 100mOhm @ 30A, 10V
Power Dissipation (Max): 1040W (Tc)
Vgs(th) (Max) @ Id: 5V @ 4mA
Supplier Device Package: TO-268AA
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±30V
Drain to Source Voltage (Vdss): 500 V
Gate Charge (Qg) (Max) @ Vgs: 96 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 6250 pF @ 25 V
товару немає в наявності
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IXFK78N50P3 DS100313AIXFKFX78N50P3.pdf
IXFK78N50P3
Виробник: IXYS
Description: MOSFET N-CH 500V 78A TO264AA
Packaging: Tube
Package / Case: TO-264-3, TO-264AA
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 78A (Tc)
Rds On (Max) @ Id, Vgs: 68mOhm @ 500mA, 10V
Power Dissipation (Max): 1130W (Tc)
Vgs(th) (Max) @ Id: 5V @ 4mA
Supplier Device Package: TO-264AA (IXFK)
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±30V
Drain to Source Voltage (Vdss): 500 V
Gate Charge (Qg) (Max) @ Vgs: 147 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 9900 pF @ 25 V
на замовлення 760 шт:
термін постачання 21-31 дні (днів)
КількістьЦіна без ПДВ
1+1915.64 грн
25+1209.38 грн
100+1058.80 грн
500+982.00 грн
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IXFQ28N60P3 IXFx28N60P3.pdf
IXFQ28N60P3
Виробник: IXYS
Description: MOSFET N-CH 600V 28A TO3P
Packaging: Tube
Package / Case: TO-3P-3, SC-65-3
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 28A (Tc)
Rds On (Max) @ Id, Vgs: 260mOhm @ 14A, 10V
Power Dissipation (Max): 695W (Tc)
Vgs(th) (Max) @ Id: 5V @ 2.5mA
Supplier Device Package: TO-3P
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±30V
Drain to Source Voltage (Vdss): 600 V
Gate Charge (Qg) (Max) @ Vgs: 50 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 3560 pF @ 25 V
на замовлення 420 шт:
термін постачання 21-31 дні (днів)
КількістьЦіна без ПДВ
1+633.32 грн
30+357.21 грн
120+301.73 грн
В кошику  од. на суму  грн.
IXFQ50N60P3 IXFx50N60P3.pdf
IXFQ50N60P3
Виробник: IXYS
Description: MOSFET N-CH 600V 50A TO3P
Packaging: Tube
Package / Case: TO-3P-3, SC-65-3
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 50A (Tc)
Rds On (Max) @ Id, Vgs: 160mOhm @ 500mA, 10V
Power Dissipation (Max): 1040W (Tc)
Vgs(th) (Max) @ Id: 5V @ 4mA
Supplier Device Package: TO-3P
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±30V
Drain to Source Voltage (Vdss): 600 V
Gate Charge (Qg) (Max) @ Vgs: 94 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 6300 pF @ 25 V
на замовлення 420 шт:
термін постачання 21-31 дні (днів)
КількістьЦіна без ПДВ
1+897.47 грн
30+520.17 грн
60+479.20 грн
120+417.39 грн
В кошику  од. на суму  грн.
IXFB132N50P3 DS100315CIXFB132N50P3.pdf
IXFB132N50P3
Виробник: IXYS
Description: MOSFET N-CH 500V 132A PLUS264
Packaging: Tube
Package / Case: TO-264-3, TO-264AA
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 132A (Tc)
Rds On (Max) @ Id, Vgs: 39mOhm @ 66A, 10V
Power Dissipation (Max): 1890W (Tc)
Vgs(th) (Max) @ Id: 5V @ 8mA
Supplier Device Package: PLUS264™
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±30V
Drain to Source Voltage (Vdss): 500 V
Gate Charge (Qg) (Max) @ Vgs: 250 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 18600 pF @ 25 V
на замовлення 186 шт:
термін постачання 21-31 дні (днів)
КількістьЦіна без ПДВ
1+2261.31 грн
25+1447.47 грн
100+1289.65 грн
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IXFH22N60P3 IXFx22N60P3.pdf
IXFH22N60P3
Виробник: IXYS
Description: MOSFET N-CH 600V 22A TO247AD
Packaging: Tube
Package / Case: TO-247-3
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 22A (Tc)
Rds On (Max) @ Id, Vgs: 360mOhm @ 11A, 10V
Power Dissipation (Max): 500W (Tc)
Vgs(th) (Max) @ Id: 5V @ 1.5mA
Supplier Device Package: TO-247AD (IXFH)
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±30V
Drain to Source Voltage (Vdss): 600 V
Gate Charge (Qg) (Max) @ Vgs: 38 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 2600 pF @ 25 V
на замовлення 705 шт:
термін постачання 21-31 дні (днів)
КількістьЦіна без ПДВ
1+656.84 грн
30+368.59 грн
60+337.14 грн
120+291.60 грн
510+251.82 грн
В кошику  од. на суму  грн.
IXFP22N60P3 IXFx22N60P3.pdf
IXFP22N60P3
Виробник: IXYS
Description: MOSFET N-CH 600V 22A TO220AB
Packaging: Tube
Package / Case: TO-220-3
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 22A (Tc)
Rds On (Max) @ Id, Vgs: 360mOhm @ 11A, 10V
Power Dissipation (Max): 500W (Tc)
Vgs(th) (Max) @ Id: 5V @ 1.5mA
Supplier Device Package: TO-220-3
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±30V
Drain to Source Voltage (Vdss): 600 V
Gate Charge (Qg) (Max) @ Vgs: 38 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 2600 pF @ 25 V
на замовлення 669 шт:
термін постачання 21-31 дні (днів)
КількістьЦіна без ПДВ
1+518.89 грн
10+337.39 грн
50+267.93 грн
100+230.49 грн
500+193.81 грн
В кошику  од. на суму  грн.
IXFQ22N60P3 IXFx22N60P3.pdf
IXFQ22N60P3
Виробник: IXYS
Description: MOSFET N-CH 600V 22A TO3P
Packaging: Tube
Package / Case: TO-3P-3, SC-65-3
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 22A (Tc)
Rds On (Max) @ Id, Vgs: 360mOhm @ 11A, 10V
Power Dissipation (Max): 500W (Tc)
Vgs(th) (Max) @ Id: 5V @ 1.5mA
Supplier Device Package: TO-3P
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±30V
Drain to Source Voltage (Vdss): 600 V
Gate Charge (Qg) (Max) @ Vgs: 38 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 2600 pF @ 25 V
на замовлення 840 шт:
термін постачання 21-31 дні (днів)
КількістьЦіна без ПДВ
1+859.84 грн
30+496.85 грн
60+457.37 грн
120+398.06 грн
510+351.29 грн
В кошику  од. на суму  грн.
IXFK80N60P3 DS100304BIXFKFX80N60P3.pdf
IXFK80N60P3
Виробник: IXYS
Description: MOSFET N-CH 600V 80A TO264AA
Packaging: Tube
Package / Case: TO-264-3, TO-264AA
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 80A (Tc)
Rds On (Max) @ Id, Vgs: 70mOhm @ 500mA, 10V
Power Dissipation (Max): 1300W (Tc)
Vgs(th) (Max) @ Id: 5V @ 8mA
Supplier Device Package: TO-264AA (IXFK)
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±30V
Drain to Source Voltage (Vdss): 600 V
Gate Charge (Qg) (Max) @ Vgs: 190 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 13100 pF @ 25 V
на замовлення 41 шт:
термін постачання 21-31 дні (днів)
КількістьЦіна без ПДВ
1+1673.44 грн
25+1044.59 грн
В кошику  од. на суму  грн.
IXFX80N60P3 DS100304BIXFKFX80N60P3.pdf
IXFX80N60P3
Виробник: IXYS
Description: MOSFET N-CH 600V 80A PLUS247-3
Packaging: Tube
Package / Case: TO-247-3 Variant
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 80A (Tc)
Rds On (Max) @ Id, Vgs: 70mOhm @ 500mA, 10V
Power Dissipation (Max): 1300W (Tc)
Vgs(th) (Max) @ Id: 5V @ 8mA
Supplier Device Package: PLUS247™-3
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±30V
Drain to Source Voltage (Vdss): 600 V
Gate Charge (Qg) (Max) @ Vgs: 190 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 13100 pF @ 25 V
на замовлення 188 шт:
термін постачання 21-31 дні (днів)
КількістьЦіна без ПДВ
1+1664.04 грн
30+1017.93 грн
120+890.15 грн
В кошику  од. на суму  грн.
IXFN110N60P3 DS100305BIXFN110N60P3.pdf
IXFN110N60P3
Виробник: IXYS
Description: MOSFET N-CH 600V 90A SOT227B
Packaging: Tube
Package / Case: SOT-227-4, miniBLOC
Mounting Type: Chassis Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 90A (Tc)
Rds On (Max) @ Id, Vgs: 56mOhm @ 55A, 10V
Power Dissipation (Max): 1500W (Tc)
Vgs(th) (Max) @ Id: 5V @ 8mA
Supplier Device Package: SOT-227B
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±30V
Drain to Source Voltage (Vdss): 600 V
Gate Charge (Qg) (Max) @ Vgs: 245 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 18000 pF @ 25 V
товару немає в наявності
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IXYH82N120C3 littelfuse-discrete-igbts-ixyh82n120c3-datasheet?assetguid=d0b3d648-a754-4e63-a7a2-de89dbf9c1f6
IXYH82N120C3
Виробник: IXYS
Description: IGBT 1200V 200A TO-247
Packaging: Tube
Package / Case: TO-247-3
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 175°C (TJ)
Input Type: Standard
Vce(on) (Max) @ Vge, Ic: 3.2V @ 15V, 82A
Supplier Device Package: TO-247 (IXYH)
Td (on/off) @ 25°C: 29ns/192ns
Switching Energy: 4.95mJ (on), 2.78mJ (off)
Test Condition: 600V, 80A, 2Ohm, 15V
Gate Charge: 215 nC
Part Status: Active
Current - Collector (Ic) (Max): 200 A
Voltage - Collector Emitter Breakdown (Max): 1200 V
Current - Collector Pulsed (Icm): 380 A
Power - Max: 1250 W
на замовлення 822 шт:
термін постачання 21-31 дні (днів)
КількістьЦіна без ПДВ
1+1307.40 грн
30+790.26 грн
120+708.87 грн
В кошику  од. на суму  грн.
IXYN82N120C3H1 littelfusediscreteigbtsxptixyn82n120c3h1datas.pdf
IXYN82N120C3H1
Виробник: IXYS
Description: IGBT MODULE 1200V 105A SOT-227B
Packaging: Tube
Package / Case: SOT-227-4, miniBLOC
Mounting Type: Chassis Mount
Input: Standard
Configuration: Single
Operating Temperature: -55°C ~ 150°C (TJ)
Vce(on) (Max) @ Vge, Ic: 3.2V @ 15V, 82A
NTC Thermistor: No
Supplier Device Package: SOT-227B
Part Status: Active
Current - Collector (Ic) (Max): 105 A
Voltage - Collector Emitter Breakdown (Max): 1200 V
Power - Max: 500 W
Current - Collector Cutoff (Max): 50 µA
Input Capacitance (Cies) @ Vce: 4.06 nF @ 25 V
на замовлення 243 шт:
термін постачання 21-31 дні (днів)
КількістьЦіна без ПДВ
1+2281.86 грн
10+1624.78 грн
100+1431.71 грн
В кошику  од. на суму  грн.
IXYB82N120C3H1 littelfuse_discrete_igbts_xpt_ixyb82n120c3h1_datasheet.pdf.pdf
IXYB82N120C3H1
Виробник: IXYS
Description: IGBT 1200V 164A 1040W PLUS264
Power - Max: 1040 W
Current - Collector Pulsed (Icm): 320 A
Voltage - Collector Emitter Breakdown (Max): 1200 V
Current - Collector (Ic) (Max): 164 A
Part Status: Active
Gate Charge: 215 nC
Test Condition: 600V, 80A, 2Ohm, 15V
Td (on/off) @ 25°C: 29ns/192ns
Supplier Device Package: PLUS264™
Vce(on) (Max) @ Vge, Ic: 3.2V @ 15V, 82A
Reverse Recovery Time (trr): 420 ns
Input Type: Standard
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Through Hole
Package / Case: TO-264-3, TO-264AA
Packaging: Tube
Switching Energy: 4.95mJ (on), 2.78mJ (off)
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SLMD121H4 20110107-SLMD121H04-DATA-SHEET.pdf
SLMD121H4
Виробник: IXYS
Description: MONO SOLAR CELL 43MM X 14MM
товару немає в наявності
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SLMD121H8L 20110107-SLMD121H08-DATA-SHEET.pdf
SLMD121H8L
Виробник: IXYS
Description: MONO SOLAR CELL 86MM X 14MM
на замовлення 167 шт:
термін постачання 21-31 дні (днів)
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SLMD600H10 20110107-SLMD600H10-DATA-SHEET.pdf
SLMD600H10
Виробник: IXYS
Description: MONO SOLAR CELL 22MM X 35MM
товару немає в наявності
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SLMD960H12 20110107-SLMD960H12-SLMD4235-DATA-SHEET.pdf
SLMD960H12
Виробник: IXYS
Description: MONO SOLAR CELL 42MM X 35MM
на замовлення 652 шт:
термін постачання 21-31 дні (днів)
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SLMD121H10 20110107-SLMD121H10-DATA-SHEET.pdf
SLMD121H10
Виробник: IXYS
Description: MONO SOLAR CELL 42MM X 35MM
товару немає в наявності
Мінімальне замовлення: 25 шт
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SLMD481H08 20110107-SLMD121H08-DATA-SHEET.pdf
SLMD481H08
Виробник: IXYS
Description: MONO SOLAR CELL 86MM X 14MM
на замовлення 152 шт:
термін постачання 21-31 дні (днів)
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SLMD481H10 20111214-SLMD481H10-DATA-SHEET.pdf
SLMD481H10
Виробник: IXYS
Description: MONO SOLAR CELL 89MM X 67MM
на замовлення 28 шт:
термін постачання 21-31 дні (днів)
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SLMD481H12 20111214-SLMD481H12-DATA-SHEET.pdf
SLMD481H12
Виробник: IXYS
Description: MONO SOLAR CELL 90MM X 79MM
товару немає в наявності
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IXFT70N20Q3
IXFT70N20Q3
Виробник: IXYS
Description: MOSFET N-CH 200V 70A TO268
Packaging: Tube
Package / Case: TO-268-3, D3PAK (2 Leads + Tab), TO-268AA
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 70A (Tc)
Rds On (Max) @ Id, Vgs: 40mOhm @ 35A, 10V
Power Dissipation (Max): 690W (Tc)
Vgs(th) (Max) @ Id: 6.5V @ 4mA
Supplier Device Package: TO-268AA
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 200 V
Gate Charge (Qg) (Max) @ Vgs: 67 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 3150 pF @ 25 V
товару немає в наявності
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