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Мінімальне замовлення: 142
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Фото | Назва | Виробник | Інформація |
Доступність |
Ціна без ПДВ |
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FGH40N60SFD Код товару: 201597 |
China |
Транзистори > IGBT Корпус: TO-247 Vces: 600 V Vce: 2,3 V Ic 25: 80 A Ic 100: 40 A |
у наявності: 97 шт
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FGH40N60SFD (FGH40N60SFDTU) Код товару: 79400 |
FAIR |
Транзистори > IGBT Корпус: TO-247 Vces: 600 V Vce: 2,3 V Ic 25: 80 A Ic 100: 40 A |
у наявності: 2 шт
очікується:
300 шт
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FGH40N60SMD Код товару: 63296 |
FAIR/ON |
Транзистори > IGBT Корпус: TO-247 Vces: 600 V Vce: 2,1 V Ic 25: 80 A Ic 100: 40 A Pd 25: 349 W td(on)/td(off) 100-150 град: 12/92 |
у наявності: 143 шт
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FGA40N60UFDTU | Fairchild Semiconductor |
Description: IGBT, 40A, 600V, N-CHANNEL Packaging: Tube Package / Case: TO-3P-3, SC-65-3 Mounting Type: Through Hole Operating Temperature: -55°C ~ 150°C (TJ) Input Type: Standard Reverse Recovery Time (trr): 95 ns Vce(on) (Max) @ Vge, Ic: 3V @ 15V, 20A Supplier Device Package: TO-3P Td (on/off) @ 25°C: 15ns/65ns Switching Energy: 470µJ (on), 130µJ (off) Test Condition: 300V, 20A, 10Ohm, 15V Gate Charge: 77 nC Part Status: Obsolete Current - Collector (Ic) (Max): 40 A Voltage - Collector Emitter Breakdown (Max): 600 V Current - Collector Pulsed (Icm): 160 A Power - Max: 160 W |
на замовлення 142 шт: термін постачання 21-31 дні (днів) |
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FGAF40N60SMD | ON-Semicoductor |
IGBT 600V 80A 115W FGAF40N60SMD TFGAF40N60smd кількість в упаковці: 2 шт |
на замовлення 22 шт: термін постачання 28-31 дні (днів) |
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FGAF40N60UFDTU | Fairchild Semiconductor |
Description: INSULATED GATE BIPOLAR TRANSISTO Packaging: Bulk Package / Case: TO-3P-3 Full Pack Mounting Type: Through Hole Operating Temperature: -55°C ~ 150°C (TJ) Input Type: Standard Reverse Recovery Time (trr): 95 ns Vce(on) (Max) @ Vge, Ic: 3V @ 15V, 20A Supplier Device Package: TO-3PF Td (on/off) @ 25°C: 15ns/65ns Switching Energy: 470µJ (on), 130µJ (off) Test Condition: 300V, 20A, 10Ohm, 15V Gate Charge: 77 nC Current - Collector (Ic) (Max): 40 A Voltage - Collector Emitter Breakdown (Max): 600 V Current - Collector Pulsed (Icm): 160 A Power - Max: 100 W |
на замовлення 2512 шт: термін постачання 21-31 дні (днів) |
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FGAF40N60UFTU | onsemi |
Description: IGBT 600V 40A TO3PF Packaging: Tube Package / Case: TO-3P-3 Full Pack Mounting Type: Through Hole Operating Temperature: -55°C ~ 150°C (TJ) Input Type: Standard Vce(on) (Max) @ Vge, Ic: 3V @ 15V, 20A Supplier Device Package: TO-3PF Td (on/off) @ 25°C: 15ns/65ns Switching Energy: 470µJ (on), 130µJ (off) Test Condition: 300V, 20A, 10Ohm, 15V Gate Charge: 77 nC Current - Collector (Ic) (Max): 40 A Voltage - Collector Emitter Breakdown (Max): 600 V Current - Collector Pulsed (Icm): 160 A Power - Max: 100 W |
на замовлення 81 шт: термін постачання 21-31 дні (днів) |
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FGAF40N60UFTU | Fairchild Semiconductor |
Description: IGBT Packaging: Bulk |
на замовлення 2166 шт: термін постачання 21-31 дні (днів) |
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FGH40N60SFD | Fairchaild | IGBT транзистор - [TO-247-3]; Uкэ.макс 600 V, 40 A Field Stop |
на замовлення 2 шт: термін постачання 2-3 дні (днів) |
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FGH40N60SFDTU | onsemi |
Description: IGBT FIELD STOP 600V 80A TO247-3 Packaging: Tube Package / Case: TO-247-3 Mounting Type: Through Hole Operating Temperature: -55°C ~ 150°C (TJ) Input Type: Standard Reverse Recovery Time (trr): 45 ns Vce(on) (Max) @ Vge, Ic: 2.9V @ 15V, 40A Supplier Device Package: TO-247-3 IGBT Type: Field Stop Td (on/off) @ 25°C: 25ns/115ns Switching Energy: 1.13mJ (on), 310µJ (off) Test Condition: 400V, 40A, 10Ohm, 15V Gate Charge: 120 nC Part Status: Active Current - Collector (Ic) (Max): 80 A Voltage - Collector Emitter Breakdown (Max): 600 V Current - Collector Pulsed (Icm): 120 A Power - Max: 290 W |
на замовлення 20 шт: термін постачання 21-31 дні (днів) |
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FGH40N60SFTU | Fairchild Semiconductor |
Description: INSULATED GATE BIPOLAR TRANSISTO Packaging: Bulk |
на замовлення 13230 шт: термін постачання 21-31 дні (днів) |
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FGH40N60SFTU | onsemi |
Description: IGBT FIELD STOP 600V 80A TO247-3 Packaging: Tube Package / Case: TO-247-3 Mounting Type: Through Hole Operating Temperature: -55°C ~ 150°C (TJ) Input Type: Standard Vce(on) (Max) @ Vge, Ic: 2.9V @ 15V, 40A Supplier Device Package: TO-247-3 IGBT Type: Field Stop Td (on/off) @ 25°C: 25ns/115ns Switching Energy: 1.13mJ (on), 310µJ (off) Test Condition: 400V, 40A, 10Ohm, 15V Gate Charge: 120 nC Current - Collector (Ic) (Max): 80 A Voltage - Collector Emitter Breakdown (Max): 600 V Current - Collector Pulsed (Icm): 120 A Power - Max: 290 W |
на замовлення 1 шт: термін постачання 21-31 дні (днів) |
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FGH40N60SMD-F085 | onsemi |
Description: IGBT 600V 80A 349W TO-247-3 Packaging: Tube Package / Case: TO-247-3 Mounting Type: Through Hole Operating Temperature: -55°C ~ 175°C (TJ) Input Type: Standard Reverse Recovery Time (trr): 47 ns Vce(on) (Max) @ Vge, Ic: 2.5V @ 15V, 40A Supplier Device Package: TO-247-3 IGBT Type: Field Stop Td (on/off) @ 25°C: 18ns/110ns Switching Energy: 920µJ (on), 300µJ (off) Test Condition: 400V, 40A, 6Ohm, 15V Gate Charge: 180 nC Part Status: Active Current - Collector (Ic) (Max): 80 A Voltage - Collector Emitter Breakdown (Max): 600 V Current - Collector Pulsed (Icm): 120 A Power - Max: 349 W Grade: Automotive Qualification: AEC-Q101 |
на замовлення 248 шт: термін постачання 21-31 дні (днів) |
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FGH40N60UFDTU | onsemi |
Description: IGBT FIELD STOP 600V 80A TO247-3 Packaging: Tube Package / Case: TO-247-3 Mounting Type: Through Hole Operating Temperature: -55°C ~ 150°C (TJ) Input Type: Standard Reverse Recovery Time (trr): 45 ns Vce(on) (Max) @ Vge, Ic: 2.4V @ 15V, 40A Supplier Device Package: TO-247-3 IGBT Type: Field Stop Td (on/off) @ 25°C: 24ns/112ns Switching Energy: 1.19mJ (on), 460µJ (off) Test Condition: 400V, 40A, 10Ohm, 15V Gate Charge: 120 nC Part Status: Active Current - Collector (Ic) (Max): 80 A Voltage - Collector Emitter Breakdown (Max): 600 V Current - Collector Pulsed (Icm): 120 A Power - Max: 290 W |
на замовлення 304 шт: термін постачання 21-31 дні (днів) |
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FGI40N60SFTU | Fairchild Semiconductor |
Description: IGBT, 80A, 600V, N-CHANNEL Packaging: Tube Package / Case: TO-262-3 Long Leads, I2PAK, TO-262AA Mounting Type: Through Hole Operating Temperature: -55°C ~ 150°C (TJ) Input Type: Standard Vce(on) (Max) @ Vge, Ic: 2.9V @ 15V, 40A Supplier Device Package: TO-262 (I2PAK) IGBT Type: Field Stop Td (on/off) @ 25°C: 25ns/115ns Switching Energy: 1.13mJ (on), 310µJ (off) Test Condition: 400V, 40A, 10Ohm, 15V Gate Charge: 120 nC Current - Collector (Ic) (Max): 80 A Voltage - Collector Emitter Breakdown (Max): 600 V Current - Collector Pulsed (Icm): 120 A Power - Max: 290 W |
на замовлення 1800 шт: термін постачання 21-31 дні (днів) |
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HGTG40N60A4 | ON-Semicoductor |
Trans IGBT Chip N-CH 600V 75A 625000mW 3-Pin(3+Tab) TO-247 HGTG40N60A4 THGTG40n60a4 кількість в упаковці: 2 шт |
на замовлення 19 шт: термін постачання 28-31 дні (днів) |
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HGTG40N60C3 | Harris Corporation |
Description: 75A, 600V, N-CHANNEL IGBT Packaging: Bulk Package / Case: TO-247-3 Mounting Type: Through Hole Operating Temperature: -55°C ~ 150°C (TJ) Input Type: Standard Vce(on) (Max) @ Vge, Ic: 1.8V @ 15V, 40A Supplier Device Package: TO-247 Td (on/off) @ 25°C: 47ns/185ns Switching Energy: 850mJ (on), 1mJ (off) Test Condition: 480V, 40A, 3Ohm, 15V Gate Charge: 395 nC Part Status: Active Current - Collector (Ic) (Max): 75 A Voltage - Collector Emitter Breakdown (Max): 600 V Current - Collector Pulsed (Icm): 300 A Power - Max: 291 W |
на замовлення 89 шт: термін постачання 21-31 дні (днів) |
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HGTG40N60C3R | Harris Corporation |
Description: 75A, 600V N-CHANNEL IGBT Packaging: Bulk Package / Case: TO-247-3 Mounting Type: Through Hole Operating Temperature: -55°C ~ 150°C (TJ) Input Type: Standard Vce(on) (Max) @ Vge, Ic: 2.2V @ 15V, 40A Supplier Device Package: TO-247 Gate Charge: 330 nC Part Status: Active Current - Collector (Ic) (Max): 75 A Voltage - Collector Emitter Breakdown (Max): 600 V Current - Collector Pulsed (Icm): 200 A Power - Max: 291 W |
на замовлення 45 шт: термін постачання 21-31 дні (днів) |
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IGW40N60H3FKSA1 | INFINEON TECHNOLOGIES |
Category: THT IGBT transistors Description: Transistor: IGBT; 600V; 40A; 306W; TO247-3; H3 Type of transistor: IGBT Technology: TRENCHSTOP™ 3 Collector-emitter voltage: 600V Collector current: 40A Power dissipation: 306W Case: TO247-3 Gate-emitter voltage: ±20V Mounting: THT Kind of package: tube Manufacturer series: H3 кількість в упаковці: 1 шт |
товар відсутній |
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IGW40N60H3FKSA1 | Infineon Technologies |
Description: IGBT TRENCH FS 600V 80A TO247-3 Packaging: Tube Package / Case: TO-247-3 Mounting Type: Through Hole Operating Temperature: -40°C ~ 175°C (TJ) Input Type: Standard Vce(on) (Max) @ Vge, Ic: 2.4V @ 15V, 40A Supplier Device Package: PG-TO247-3-1 IGBT Type: Trench Field Stop Td (on/off) @ 25°C: 19ns/197ns Switching Energy: 1.68mJ Test Condition: 400V, 40A, 7.9Ohm, 15V Gate Charge: 223 nC Part Status: Active Current - Collector (Ic) (Max): 80 A Voltage - Collector Emitter Breakdown (Max): 600 V Current - Collector Pulsed (Icm): 160 A Power - Max: 306 W |
на замовлення 168 шт: термін постачання 21-31 дні (днів) |
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IGW40N60H3FKSA1 | Infineon Technologies | Trans IGBT Chip N-CH 600V 80A 306000mW 3-Pin(3+Tab) TO-247 Tube |
на замовлення 245 шт: термін постачання 21-31 дні (днів) |
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IGW40N60H3FKSA1 | Infineon |
IGBT 600V 80A 306W IGW40N60H3FKSA1 TIGW40n60h3 кількість в упаковці: 5 шт |
на замовлення 10 шт: термін постачання 28-31 дні (днів) |
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IGW40N60TPXKSA1 | Infineon Technologies |
Description: IGBT TRENCH/FS 600V 67A TO247-3 Packaging: Tube Package / Case: TO-247-3 Mounting Type: Through Hole Operating Temperature: -40°C ~ 175°C (TJ) Input Type: Standard Vce(on) (Max) @ Vge, Ic: 1.8V @ 15V, 40A Supplier Device Package: PG-TO247-3 IGBT Type: Trench Field Stop Td (on/off) @ 25°C: 18ns/222ns Switching Energy: 1.06mJ (on), 610µJ (off) Test Condition: 400V, 40A, 10.1Ohm, 15V Gate Charge: 177 nC Part Status: Not For New Designs Current - Collector (Ic) (Max): 67 A Voltage - Collector Emitter Breakdown (Max): 600 V Current - Collector Pulsed (Icm): 120 A Power - Max: 246 W |
на замовлення 428 шт: термін постачання 21-31 дні (днів) |
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IHW40N60RFFKSA1 | Infineon Technologies |
Description: IGBT TRENCH 600V 80A TO247-3 Packaging: Tube Package / Case: TO-247-3 Mounting Type: Through Hole Operating Temperature: -40°C ~ 175°C (TJ) Input Type: Standard Vce(on) (Max) @ Vge, Ic: 2.4V @ 15V, 40A Supplier Device Package: PG-TO247-3-1 IGBT Type: Trench Td (on/off) @ 25°C: -/175ns Switching Energy: 560µJ (off) Test Condition: 400V, 40A, 5.6Ohm, 15V Gate Charge: 220 nC Current - Collector (Ic) (Max): 80 A Voltage - Collector Emitter Breakdown (Max): 600 V Current - Collector Pulsed (Icm): 120 A Power - Max: 305 W |
на замовлення 639 шт: термін постачання 21-31 дні (днів) |
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IHW40N60RFKSA1 | Infineon Technologies |
Description: IGBT TRENCH 600V 80A TO247-3 Packaging: Tube Package / Case: TO-247-3 Mounting Type: Through Hole Operating Temperature: -40°C ~ 175°C (TJ) Input Type: Standard Vce(on) (Max) @ Vge, Ic: 2.05V @ 15V, 40A Supplier Device Package: PG-TO247-3-1 IGBT Type: Trench Td (on/off) @ 25°C: -/193ns Switching Energy: 750µJ (off) Test Condition: 400V, 40A, 5.6Ohm, 15V Gate Charge: 223 nC Current - Collector (Ic) (Max): 80 A Voltage - Collector Emitter Breakdown (Max): 600 V Current - Collector Pulsed (Icm): 120 A Power - Max: 305 W |
на замовлення 544 шт: термін постачання 21-31 дні (днів) |
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IKFW40N60DH3EXKSA1 | Infineon Technologies |
Description: IGBT TRENCH FS 600V 34A TO247-3 Packaging: Tube Package / Case: TO-247-3 Mounting Type: Through Hole Operating Temperature: -40°C ~ 175°C (TJ) Input Type: Standard Reverse Recovery Time (trr): 72 ns Vce(on) (Max) @ Vge, Ic: 2.7V @ 15V, 30A Supplier Device Package: PG-TO247-3-AI IGBT Type: Trench Field Stop Td (on/off) @ 25°C: 18ns/144ns Switching Energy: 870µJ (on), 360µJ (off) Test Condition: 400V, 30A, 10Ohm, 15V Gate Charge: 107 nC Part Status: Active Current - Collector (Ic) (Max): 34 A Voltage - Collector Emitter Breakdown (Max): 600 V Current - Collector Pulsed (Icm): 90 A Power - Max: 111 W |
на замовлення 220 шт: термін постачання 21-31 дні (днів) |
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IKW40N60DTPXKSA1 | Infineon Technologies |
Description: IGBT TRENCH FS 600V 67A TO247-3 Packaging: Tube Package / Case: TO-247-3 Mounting Type: Through Hole Operating Temperature: -40°C ~ 175°C (TJ) Input Type: Standard Reverse Recovery Time (trr): 87 ns Vce(on) (Max) @ Vge, Ic: 1.8V @ 15V, 40A Supplier Device Package: PG-TO247-3 IGBT Type: Trench Field Stop Td (on/off) @ 25°C: 18ns/222ns Switching Energy: 1.06mJ (on), 610µJ (off) Test Condition: 400V, 40A, 10.1Ohm, 15V Gate Charge: 177 nC Part Status: Not For New Designs Current - Collector (Ic) (Max): 67 A Voltage - Collector Emitter Breakdown (Max): 600 V Current - Collector Pulsed (Icm): 120 A Power - Max: 246 W |
на замовлення 108 шт: термін постачання 21-31 дні (днів) |
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IKW40N60H3FKSA1 | INFINEON TECHNOLOGIES |
Category: THT IGBT transistors Description: Transistor: IGBT; 600V; 40A; 153W; TO247-3 Type of transistor: IGBT Technology: TRENCHSTOP™ Collector-emitter voltage: 600V Collector current: 40A Power dissipation: 153W Case: TO247-3 Gate-emitter voltage: ±20V Pulsed collector current: 160A Mounting: THT Gate charge: 223nC Kind of package: tube Turn-on time: 52ns Turn-off time: 218ns Features of semiconductor devices: integrated anti-parallel diode |
на замовлення 40 шт: термін постачання 21-30 дні (днів) |
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IKW40N60H3FKSA1 | INFINEON TECHNOLOGIES |
Category: THT IGBT transistors Description: Transistor: IGBT; 600V; 40A; 153W; TO247-3 Type of transistor: IGBT Technology: TRENCHSTOP™ Collector-emitter voltage: 600V Collector current: 40A Power dissipation: 153W Case: TO247-3 Gate-emitter voltage: ±20V Pulsed collector current: 160A Mounting: THT Gate charge: 223nC Kind of package: tube Turn-on time: 52ns Turn-off time: 218ns Features of semiconductor devices: integrated anti-parallel diode кількість в упаковці: 1 шт |
на замовлення 40 шт: термін постачання 7-14 дні (днів) |
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IKW40N60H3FKSA1 | Infineon Technologies |
Description: IGBT TRENCH FS 600V 80A TO247-3 Packaging: Tube Package / Case: TO-247-3 Mounting Type: Through Hole Operating Temperature: -40°C ~ 175°C (TJ) Input Type: Standard Reverse Recovery Time (trr): 124 ns Vce(on) (Max) @ Vge, Ic: 2.4V @ 15V, 40A Supplier Device Package: PG-TO247-3-1 IGBT Type: Trench Field Stop Td (on/off) @ 25°C: 19ns/197ns Switching Energy: 1.68mJ Test Condition: 400V, 40A, 7.9Ohm, 15V Gate Charge: 223 nC Part Status: Active Current - Collector (Ic) (Max): 80 A Voltage - Collector Emitter Breakdown (Max): 600 V Current - Collector Pulsed (Icm): 160 A Power - Max: 306 W |
на замовлення 1292 шт: термін постачання 21-31 дні (днів) |
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IRFPS40N60K | Siliconix |
Transistor N-Channel MOSFET; 600V; 30V; 130mOhm; 40A; 570W; -55°C ~ 150°C; IRFPS40N60K TIRFPS40n60k кількість в упаковці: 2 шт |
на замовлення 20 шт: термін постачання 28-31 дні (днів) |
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MGY40N60 | onsemi |
Description: IGBT 66A, 600V, N CHANNEL, TO 26 Packaging: Bulk Part Status: Active |
на замовлення 12095 шт: термін постачання 21-31 дні (днів) |
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MGY40N60D | onsemi |
Description: TRANS IGBT CHIP N-CH 600V 66A 3P Packaging: Bulk Part Status: Active |
на замовлення 1588 шт: термін постачання 21-31 дні (днів) |
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NGTB40N60IHLWG | onsemi |
Description: IGBT 600V 40A TO247 Packaging: Tube Package / Case: TO-247-3 Mounting Type: Through Hole Operating Temperature: -55°C ~ 150°C (TJ) Input Type: Standard Reverse Recovery Time (trr): 400 ns Vce(on) (Max) @ Vge, Ic: 2.4V @ 15V, 40A Supplier Device Package: TO-247-3 IGBT Type: Trench Field Stop Td (on/off) @ 25°C: 70ns/140ns Switching Energy: 400µJ (off) Test Condition: 400V, 40A, 10Ohm, 15V Gate Charge: 130 nC Current - Collector (Ic) (Max): 80 A Voltage - Collector Emitter Breakdown (Max): 600 V Current - Collector Pulsed (Icm): 200 A Power - Max: 250 W |
на замовлення 452462 шт: термін постачання 21-31 дні (днів) |
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NGTB40N60L2WG | onsemi |
Description: IGBT TRENCH/FS 600V 80A TO247 Packaging: Bulk Package / Case: TO-247-3 Mounting Type: Through Hole Operating Temperature: -55°C ~ 175°C (TJ) Input Type: Standard Reverse Recovery Time (trr): 73 ns Vce(on) (Max) @ Vge, Ic: 2.61V @ 15V, 40A Supplier Device Package: TO-247-3 IGBT Type: Trench Field Stop Td (on/off) @ 25°C: 98ns/213ns Switching Energy: 1.17mJ (on), 280µJ (off) Test Condition: 400V, 40A, 10Ohm, 15V Gate Charge: 228 nC Current - Collector (Ic) (Max): 80 A Voltage - Collector Emitter Breakdown (Max): 600 V Current - Collector Pulsed (Icm): 160 A Power - Max: 417 W |
на замовлення 2092 шт: термін постачання 21-31 дні (днів) |
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NVHL040N60S5F | onsemi |
Description: SUPERFET5 FRFET, 40MOHM, TO-247- Packaging: Tube Package / Case: TO-247-3 Mounting Type: Through Hole Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 59A (Tc) Rds On (Max) @ Id, Vgs: 40mOhm @ 29.5A, 10V Power Dissipation (Max): 347W (Tc) Vgs(th) (Max) @ Id: 4.8V @ 7.2mA Supplier Device Package: TO-247-3 Part Status: Active Drive Voltage (Max Rds On, Min Rds On): 10V Vgs (Max): ±30V Drain to Source Voltage (Vdss): 600 V Gate Charge (Qg) (Max) @ Vgs: 115 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 6318 pF @ 400 V |
на замовлення 363 шт: термін постачання 21-31 дні (днів) |
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SGH40N60UFDTU | onsemi |
Description: IGBT 600V 40A 160W TO3P Packaging: Bulk Package / Case: TO-3P-3, SC-65-3 Mounting Type: Through Hole Operating Temperature: -55°C ~ 150°C (TJ) Input Type: Standard Reverse Recovery Time (trr): 60 ns Vce(on) (Max) @ Vge, Ic: 2.6V @ 15V, 20A Supplier Device Package: TO-3P Td (on/off) @ 25°C: 15ns/65ns Switching Energy: 160µJ (on), 200µJ (off) Test Condition: 300V, 20A, 10Ohm, 15V Gate Charge: 97 nC Part Status: Obsolete Current - Collector (Ic) (Max): 40 A Voltage - Collector Emitter Breakdown (Max): 600 V Current - Collector Pulsed (Icm): 160 A Power - Max: 160 W |
на замовлення 195573 шт: термін постачання 21-31 дні (днів) |
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SGH40N60UFTU | Fairchild Semiconductor |
Description: INSULATED GATE BIPOLAR TRANSISTO Packaging: Bulk Package / Case: TO-3P-3, SC-65-3 Mounting Type: Through Hole Operating Temperature: -55°C ~ 150°C (TJ) Input Type: Standard Vce(on) (Max) @ Vge, Ic: 2.6V @ 15V, 20A Supplier Device Package: TO-3P Td (on/off) @ 25°C: 15ns/65ns Switching Energy: 160µJ (on), 200µJ (off) Test Condition: 300V, 20A, 10Ohm, 15V Gate Charge: 97 nC Part Status: Active Current - Collector (Ic) (Max): 40 A Voltage - Collector Emitter Breakdown (Max): 600 V Current - Collector Pulsed (Icm): 160 A Power - Max: 160 W |
на замовлення 900 шт: термін постачання 21-31 дні (днів) |
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SGH40N60UFTU | onsemi |
Description: IGBT 600V 40A TO3P Packaging: Bulk Package / Case: TO-3P-3, SC-65-3 Mounting Type: Through Hole Operating Temperature: -55°C ~ 150°C (TJ) Input Type: Standard Vce(on) (Max) @ Vge, Ic: 2.6V @ 15V, 20A Supplier Device Package: TO-3P Td (on/off) @ 25°C: 15ns/65ns Switching Energy: 160µJ (on), 200µJ (off) Test Condition: 300V, 20A, 10Ohm, 15V Gate Charge: 97 nC Current - Collector (Ic) (Max): 40 A Voltage - Collector Emitter Breakdown (Max): 600 V Current - Collector Pulsed (Icm): 160 A Power - Max: 160 W |
на замовлення 108626 шт: термін постачання 21-31 дні (днів) |
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SGP40N60UFTU | Fairchild Semiconductor |
Description: N-CHANNEL IGBT Packaging: Tube Package / Case: TO-220-3 Mounting Type: Through Hole Operating Temperature: -55°C ~ 150°C (TJ) Input Type: Standard Vce(on) (Max) @ Vge, Ic: 2.6V @ 15V, 20A Supplier Device Package: TO-220-3 Td (on/off) @ 25°C: 15ns/65ns Switching Energy: 160µJ (on), 200µJ (off) Test Condition: 300V, 20A, 10Ohm, 15V Gate Charge: 97 nC Part Status: Obsolete Current - Collector (Ic) (Max): 40 A Voltage - Collector Emitter Breakdown (Max): 600 V Current - Collector Pulsed (Icm): 160 A Power - Max: 160 W |
на замовлення 51224 шт: термін постачання 21-31 дні (днів) |
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SIHD240N60E-GE3 | Vishay Siliconix |
Description: MOSFET N-CH 600V 12A DPAK Packaging: Tube Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63 Mounting Type: Surface Mount Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 12A (Tc) Rds On (Max) @ Id, Vgs: 240mOhm @ 5.5A, 10V Power Dissipation (Max): 78W (Tc) Vgs(th) (Max) @ Id: 5V @ 250µA Supplier Device Package: TO-252AA Part Status: Active Drive Voltage (Max Rds On, Min Rds On): 10V Vgs (Max): ±30V Drain to Source Voltage (Vdss): 600 V Gate Charge (Qg) (Max) @ Vgs: 23 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 783 pF @ 100 V |
на замовлення 3070 шт: термін постачання 21-31 дні (днів) |
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SIHFPS40N60K-GE3 | Vishay Siliconix |
Description: POWER MOSFET SUPER-247, 130 M @ Packaging: Tube Package / Case: TO-274AA Mounting Type: Through Hole Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 40A (Tc) Rds On (Max) @ Id, Vgs: 130mOhm @ 24A, 10V Power Dissipation (Max): 570W (Tc) Vgs(th) (Max) @ Id: 5V @ 250µA Supplier Device Package: SUPER-247™ (TO-274AA) Part Status: Active Drive Voltage (Max Rds On, Min Rds On): 10V Vgs (Max): ±30V Drain to Source Voltage (Vdss): 600 V Gate Charge (Qg) (Max) @ Vgs: 330 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 7970 pF @ 25 V |
на замовлення 218 шт: термін постачання 21-31 дні (днів) |
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SIHG40N60E-GE3 | Vishay Siliconix |
Description: MOSFET N-CH 600V 40A TO247AC Packaging: Tube Package / Case: TO-247-3 Mounting Type: Through Hole Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 40A (Tc) Rds On (Max) @ Id, Vgs: 75mOhm @ 20A, 10V Power Dissipation (Max): 329W (Tc) Vgs(th) (Max) @ Id: 4V @ 250µA Supplier Device Package: TO-247AC Part Status: Active Drive Voltage (Max Rds On, Min Rds On): 10V Vgs (Max): ±30V Drain to Source Voltage (Vdss): 600 V Gate Charge (Qg) (Max) @ Vgs: 197 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 4436 pF @ 100 V |
на замовлення 809 шт: термін постачання 21-31 дні (днів) |
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SIHH240N60E-T1-GE3 | Vishay Siliconix |
Description: MOSFET N-CH 600V 12A PPAK 8 X 8 Packaging: Cut Tape (CT) Package / Case: 8-PowerTDFN Mounting Type: Surface Mount Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 12A (Tc) Rds On (Max) @ Id, Vgs: 240mOhm @ 5.5A, 10V Power Dissipation (Max): 89W (Tc) Vgs(th) (Max) @ Id: 5V @ 250µA Supplier Device Package: PowerPAK® 8 x 8 Part Status: Active Drive Voltage (Max Rds On, Min Rds On): 10V Vgs (Max): ±30V Drain to Source Voltage (Vdss): 600 V Gate Charge (Qg) (Max) @ Vgs: 23 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 783 pF @ 100 V |
на замовлення 2786 шт: термін постачання 21-31 дні (днів) |
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SIHP240N60E-GE3 | Vishay Siliconix |
Description: MOSFET N-CH 600V 12A TO220AB Packaging: Tube Package / Case: TO-220-3 Mounting Type: Through Hole Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 12A (Tc) Rds On (Max) @ Id, Vgs: 240mOhm @ 5.5A, 10V Power Dissipation (Max): 78W (Tc) Vgs(th) (Max) @ Id: 5V @ 250µA Supplier Device Package: TO-220AB Part Status: Active Drive Voltage (Max Rds On, Min Rds On): 10V Vgs (Max): ±30V Drain to Source Voltage (Vdss): 600 V Gate Charge (Qg) (Max) @ Vgs: 23 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 795 pF @ 100 V |
на замовлення 159 шт: термін постачання 21-31 дні (днів) |
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STB40N60M2 | STMicroelectronics |
Description: MOSFET N-CH 600V 34A D2PAK Packaging: Cut Tape (CT) Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB Mounting Type: Surface Mount Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 34A (Tc) Rds On (Max) @ Id, Vgs: 88mOhm @ 17A, 10V Power Dissipation (Max): 250W (Tc) Vgs(th) (Max) @ Id: 4V @ 250µA Supplier Device Package: TO-263 (D2Pak) Part Status: Active Drive Voltage (Max Rds On, Min Rds On): 10V Vgs (Max): ±25V Drain to Source Voltage (Vdss): 600 V Gate Charge (Qg) (Max) @ Vgs: 57 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 2500 pF @ 100 V |
на замовлення 2470 шт: термін постачання 21-31 дні (днів) |
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STB40N60M2 | STMicroelectronics |
Description: MOSFET N-CH 600V 34A D2PAK Packaging: Tape & Reel (TR) Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB Mounting Type: Surface Mount Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 34A (Tc) Rds On (Max) @ Id, Vgs: 88mOhm @ 17A, 10V Power Dissipation (Max): 250W (Tc) Vgs(th) (Max) @ Id: 4V @ 250µA Supplier Device Package: TO-263 (D2Pak) Part Status: Active Drive Voltage (Max Rds On, Min Rds On): 10V Vgs (Max): ±25V Drain to Source Voltage (Vdss): 600 V Gate Charge (Qg) (Max) @ Vgs: 57 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 2500 pF @ 100 V |
на замовлення 1000 шт: термін постачання 21-31 дні (днів) |
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STF40N60M2 | STMicroelectronics |
Category: THT N channel transistors Description: Transistor: N-MOSFET; unipolar; 650V; 34A; Idm: 136A; 40W; TO220FP Type of transistor: N-MOSFET Polarisation: unipolar Drain-source voltage: 650V Drain current: 34A Pulsed drain current: 136A Power dissipation: 40W Case: TO220FP Gate-source voltage: ±25V On-state resistance: 88mΩ Mounting: THT Gate charge: 57nC Kind of package: tube Kind of channel: enhanced |
на замовлення 46 шт: термін постачання 21-30 дні (днів) |
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STF40N60M2 | STMicroelectronics |
Category: THT N channel transistors Description: Transistor: N-MOSFET; unipolar; 650V; 34A; Idm: 136A; 40W; TO220FP Type of transistor: N-MOSFET Polarisation: unipolar Drain-source voltage: 650V Drain current: 34A Pulsed drain current: 136A Power dissipation: 40W Case: TO220FP Gate-source voltage: ±25V On-state resistance: 88mΩ Mounting: THT Gate charge: 57nC Kind of package: tube Kind of channel: enhanced кількість в упаковці: 1 шт |
на замовлення 46 шт: термін постачання 7-14 дні (днів) |
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STF40N60M2 | STMicroelectronics |
Description: MOSFET N-CH 600V 34A TO220FP Packaging: Tube Package / Case: TO-220-3 Full Pack Mounting Type: Through Hole Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 34A (Tc) Rds On (Max) @ Id, Vgs: 88mOhm @ 17A, 10V Power Dissipation (Max): 40W (Tc) Vgs(th) (Max) @ Id: 4V @ 250µA Supplier Device Package: TO-220FP Part Status: Active Drive Voltage (Max Rds On, Min Rds On): 10V Vgs (Max): ±25V Drain to Source Voltage (Vdss): 600 V Gate Charge (Qg) (Max) @ Vgs: 57 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 2500 pF @ 100 V |
на замовлення 1089 шт: термін постачання 21-31 дні (днів) |
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STP40N60M2 | STMicroelectronics |
Description: MOSFET N-CH 600V 34A TO220 Packaging: Tube Package / Case: TO-220-3 Mounting Type: Through Hole Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 34A (Tc) Rds On (Max) @ Id, Vgs: 88mOhm @ 17A, 10V Power Dissipation (Max): 250W (Tc) Vgs(th) (Max) @ Id: 4V @ 250µA Supplier Device Package: TO-220 Part Status: Active Drive Voltage (Max Rds On, Min Rds On): 10V Vgs (Max): ±25V Drain to Source Voltage (Vdss): 600 V Gate Charge (Qg) (Max) @ Vgs: 57 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 2500 pF @ 100 V |
на замовлення 1000 шт: термін постачання 21-31 дні (днів) |
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STW40N60M2 | STMicroelectronics | Trans MOSFET N-CH 600V 34A 3-Pin(3+Tab) TO-247 Tube |
на замовлення 204 шт: термін постачання 21-31 дні (днів) |
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STW40N60M2 | STMicroelectronics |
Description: MOSFET N-CH 600V 34A TO247 Packaging: Tube Package / Case: TO-247-3 Mounting Type: Through Hole Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 34A (Tc) Rds On (Max) @ Id, Vgs: 88mOhm @ 17A, 10V Power Dissipation (Max): 250W (Tc) Vgs(th) (Max) @ Id: 4V @ 250µA Supplier Device Package: TO-247-3 Part Status: Active Drive Voltage (Max Rds On, Min Rds On): 10V Vgs (Max): ±25V Drain to Source Voltage (Vdss): 600 V Gate Charge (Qg) (Max) @ Vgs: 57 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 2500 pF @ 100 V |
на замовлення 586 шт: термін постачання 21-31 дні (днів) |
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STWA40N60M2 | STMicroelectronics |
Description: MOSFET N-CHANNEL 600V 34A TO247 Packaging: Tube Package / Case: TO-247-3 Mounting Type: Through Hole Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 34A (Tc) Supplier Device Package: TO-247 Long Leads Part Status: Active Drive Voltage (Max Rds On, Min Rds On): 10V Vgs (Max): ±25V Drain to Source Voltage (Vdss): 600 V |
на замовлення 600 шт: термін постачання 21-31 дні (днів) |
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Транзистор IGBT FGH40N60SFD 40A 600V TO-247 |
на замовлення 5 шт: термін постачання 3 дні (днів) |
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Транзистор IGBT FGH40N60SMD 40A 600V TO-247 |
на замовлення 12 шт: термін постачання 3 дні (днів) |
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Транзистор IGBT FGH40N60UFD 40A 600V TO-247 |
на замовлення 26 шт: термін постачання 3 дні (днів) |
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Транзистор IGBT IHW40N60RF(H40RF60) 80A 600V TO-247 |
на замовлення 4 шт: термін постачання 3 дні (днів) |
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Транзистор IGBT SGT40N60NPFDP 40A 600V TO-3P |
на замовлення 24 шт: термін постачання 3 дні (днів) |
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FGAF40N60UFDTU | ON Semiconductor |
на замовлення 10800 шт: термін постачання 14-28 дні (днів) |
FGH40N60SFD (FGH40N60SFDTU) Код товару: 79400 |
у наявності: 2 шт
очікується:
300 шт
Кількість | Ціна без ПДВ |
---|---|
1+ | 165 грн |
10+ | 152 грн |
100+ | 139 грн |
FGH40N60SMD Код товару: 63296 |
Виробник: FAIR/ON
Транзистори > IGBT
Корпус: TO-247
Vces: 600 V
Vce: 2,1 V
Ic 25: 80 A
Ic 100: 40 A
Pd 25: 349 W
td(on)/td(off) 100-150 град: 12/92
Транзистори > IGBT
Корпус: TO-247
Vces: 600 V
Vce: 2,1 V
Ic 25: 80 A
Ic 100: 40 A
Pd 25: 349 W
td(on)/td(off) 100-150 град: 12/92
у наявності: 143 шт
Кількість | Ціна без ПДВ |
---|---|
1+ | 205 грн |
10+ | 186 грн |
FGA40N60UFDTU |
Виробник: Fairchild Semiconductor
Description: IGBT, 40A, 600V, N-CHANNEL
Packaging: Tube
Package / Case: TO-3P-3, SC-65-3
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Input Type: Standard
Reverse Recovery Time (trr): 95 ns
Vce(on) (Max) @ Vge, Ic: 3V @ 15V, 20A
Supplier Device Package: TO-3P
Td (on/off) @ 25°C: 15ns/65ns
Switching Energy: 470µJ (on), 130µJ (off)
Test Condition: 300V, 20A, 10Ohm, 15V
Gate Charge: 77 nC
Part Status: Obsolete
Current - Collector (Ic) (Max): 40 A
Voltage - Collector Emitter Breakdown (Max): 600 V
Current - Collector Pulsed (Icm): 160 A
Power - Max: 160 W
Description: IGBT, 40A, 600V, N-CHANNEL
Packaging: Tube
Package / Case: TO-3P-3, SC-65-3
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Input Type: Standard
Reverse Recovery Time (trr): 95 ns
Vce(on) (Max) @ Vge, Ic: 3V @ 15V, 20A
Supplier Device Package: TO-3P
Td (on/off) @ 25°C: 15ns/65ns
Switching Energy: 470µJ (on), 130µJ (off)
Test Condition: 300V, 20A, 10Ohm, 15V
Gate Charge: 77 nC
Part Status: Obsolete
Current - Collector (Ic) (Max): 40 A
Voltage - Collector Emitter Breakdown (Max): 600 V
Current - Collector Pulsed (Icm): 160 A
Power - Max: 160 W
на замовлення 142 шт:
термін постачання 21-31 дні (днів)Кількість | Ціна без ПДВ |
---|---|
142+ | 154.66 грн |
FGAF40N60SMD |
на замовлення 22 шт:
термін постачання 28-31 дні (днів)Кількість | Ціна без ПДВ |
---|---|
4+ | 240.96 грн |
FGAF40N60UFDTU |
Виробник: Fairchild Semiconductor
Description: INSULATED GATE BIPOLAR TRANSISTO
Packaging: Bulk
Package / Case: TO-3P-3 Full Pack
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Input Type: Standard
Reverse Recovery Time (trr): 95 ns
Vce(on) (Max) @ Vge, Ic: 3V @ 15V, 20A
Supplier Device Package: TO-3PF
Td (on/off) @ 25°C: 15ns/65ns
Switching Energy: 470µJ (on), 130µJ (off)
Test Condition: 300V, 20A, 10Ohm, 15V
Gate Charge: 77 nC
Current - Collector (Ic) (Max): 40 A
Voltage - Collector Emitter Breakdown (Max): 600 V
Current - Collector Pulsed (Icm): 160 A
Power - Max: 100 W
Description: INSULATED GATE BIPOLAR TRANSISTO
Packaging: Bulk
Package / Case: TO-3P-3 Full Pack
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Input Type: Standard
Reverse Recovery Time (trr): 95 ns
Vce(on) (Max) @ Vge, Ic: 3V @ 15V, 20A
Supplier Device Package: TO-3PF
Td (on/off) @ 25°C: 15ns/65ns
Switching Energy: 470µJ (on), 130µJ (off)
Test Condition: 300V, 20A, 10Ohm, 15V
Gate Charge: 77 nC
Current - Collector (Ic) (Max): 40 A
Voltage - Collector Emitter Breakdown (Max): 600 V
Current - Collector Pulsed (Icm): 160 A
Power - Max: 100 W
на замовлення 2512 шт:
термін постачання 21-31 дні (днів)Кількість | Ціна без ПДВ |
---|---|
122+ | 163.21 грн |
FGAF40N60UFTU |
Виробник: onsemi
Description: IGBT 600V 40A TO3PF
Packaging: Tube
Package / Case: TO-3P-3 Full Pack
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Input Type: Standard
Vce(on) (Max) @ Vge, Ic: 3V @ 15V, 20A
Supplier Device Package: TO-3PF
Td (on/off) @ 25°C: 15ns/65ns
Switching Energy: 470µJ (on), 130µJ (off)
Test Condition: 300V, 20A, 10Ohm, 15V
Gate Charge: 77 nC
Current - Collector (Ic) (Max): 40 A
Voltage - Collector Emitter Breakdown (Max): 600 V
Current - Collector Pulsed (Icm): 160 A
Power - Max: 100 W
Description: IGBT 600V 40A TO3PF
Packaging: Tube
Package / Case: TO-3P-3 Full Pack
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Input Type: Standard
Vce(on) (Max) @ Vge, Ic: 3V @ 15V, 20A
Supplier Device Package: TO-3PF
Td (on/off) @ 25°C: 15ns/65ns
Switching Energy: 470µJ (on), 130µJ (off)
Test Condition: 300V, 20A, 10Ohm, 15V
Gate Charge: 77 nC
Current - Collector (Ic) (Max): 40 A
Voltage - Collector Emitter Breakdown (Max): 600 V
Current - Collector Pulsed (Icm): 160 A
Power - Max: 100 W
на замовлення 81 шт:
термін постачання 21-31 дні (днів)Кількість | Ціна без ПДВ |
---|---|
2+ | 223.07 грн |
30+ | 170.04 грн |
FGAF40N60UFTU |
на замовлення 2166 шт:
термін постачання 21-31 дні (днів)Кількість | Ціна без ПДВ |
---|---|
164+ | 120.43 грн |
FGH40N60SFD |
Виробник: Fairchaild
IGBT транзистор - [TO-247-3]; Uкэ.макс 600 V, 40 A Field Stop
IGBT транзистор - [TO-247-3]; Uкэ.макс 600 V, 40 A Field Stop
на замовлення 2 шт:
термін постачання 2-3 дні (днів)Кількість | Ціна без ПДВ |
---|---|
1+ | 312.64 грн |
10+ | 261.28 грн |
FGH40N60SFDTU |
Виробник: onsemi
Description: IGBT FIELD STOP 600V 80A TO247-3
Packaging: Tube
Package / Case: TO-247-3
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Input Type: Standard
Reverse Recovery Time (trr): 45 ns
Vce(on) (Max) @ Vge, Ic: 2.9V @ 15V, 40A
Supplier Device Package: TO-247-3
IGBT Type: Field Stop
Td (on/off) @ 25°C: 25ns/115ns
Switching Energy: 1.13mJ (on), 310µJ (off)
Test Condition: 400V, 40A, 10Ohm, 15V
Gate Charge: 120 nC
Part Status: Active
Current - Collector (Ic) (Max): 80 A
Voltage - Collector Emitter Breakdown (Max): 600 V
Current - Collector Pulsed (Icm): 120 A
Power - Max: 290 W
Description: IGBT FIELD STOP 600V 80A TO247-3
Packaging: Tube
Package / Case: TO-247-3
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Input Type: Standard
Reverse Recovery Time (trr): 45 ns
Vce(on) (Max) @ Vge, Ic: 2.9V @ 15V, 40A
Supplier Device Package: TO-247-3
IGBT Type: Field Stop
Td (on/off) @ 25°C: 25ns/115ns
Switching Energy: 1.13mJ (on), 310µJ (off)
Test Condition: 400V, 40A, 10Ohm, 15V
Gate Charge: 120 nC
Part Status: Active
Current - Collector (Ic) (Max): 80 A
Voltage - Collector Emitter Breakdown (Max): 600 V
Current - Collector Pulsed (Icm): 120 A
Power - Max: 290 W
на замовлення 20 шт:
термін постачання 21-31 дні (днів)Кількість | Ціна без ПДВ |
---|---|
1+ | 357.06 грн |
FGH40N60SFTU |
на замовлення 13230 шт:
термін постачання 21-31 дні (днів)Кількість | Ціна без ПДВ |
---|---|
122+ | 163.21 грн |
FGH40N60SFTU |
Виробник: onsemi
Description: IGBT FIELD STOP 600V 80A TO247-3
Packaging: Tube
Package / Case: TO-247-3
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Input Type: Standard
Vce(on) (Max) @ Vge, Ic: 2.9V @ 15V, 40A
Supplier Device Package: TO-247-3
IGBT Type: Field Stop
Td (on/off) @ 25°C: 25ns/115ns
Switching Energy: 1.13mJ (on), 310µJ (off)
Test Condition: 400V, 40A, 10Ohm, 15V
Gate Charge: 120 nC
Current - Collector (Ic) (Max): 80 A
Voltage - Collector Emitter Breakdown (Max): 600 V
Current - Collector Pulsed (Icm): 120 A
Power - Max: 290 W
Description: IGBT FIELD STOP 600V 80A TO247-3
Packaging: Tube
Package / Case: TO-247-3
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Input Type: Standard
Vce(on) (Max) @ Vge, Ic: 2.9V @ 15V, 40A
Supplier Device Package: TO-247-3
IGBT Type: Field Stop
Td (on/off) @ 25°C: 25ns/115ns
Switching Energy: 1.13mJ (on), 310µJ (off)
Test Condition: 400V, 40A, 10Ohm, 15V
Gate Charge: 120 nC
Current - Collector (Ic) (Max): 80 A
Voltage - Collector Emitter Breakdown (Max): 600 V
Current - Collector Pulsed (Icm): 120 A
Power - Max: 290 W
на замовлення 1 шт:
термін постачання 21-31 дні (днів)Кількість | Ціна без ПДВ |
---|---|
1+ | 287.93 грн |
FGH40N60SMD-F085 |
Виробник: onsemi
Description: IGBT 600V 80A 349W TO-247-3
Packaging: Tube
Package / Case: TO-247-3
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 175°C (TJ)
Input Type: Standard
Reverse Recovery Time (trr): 47 ns
Vce(on) (Max) @ Vge, Ic: 2.5V @ 15V, 40A
Supplier Device Package: TO-247-3
IGBT Type: Field Stop
Td (on/off) @ 25°C: 18ns/110ns
Switching Energy: 920µJ (on), 300µJ (off)
Test Condition: 400V, 40A, 6Ohm, 15V
Gate Charge: 180 nC
Part Status: Active
Current - Collector (Ic) (Max): 80 A
Voltage - Collector Emitter Breakdown (Max): 600 V
Current - Collector Pulsed (Icm): 120 A
Power - Max: 349 W
Grade: Automotive
Qualification: AEC-Q101
Description: IGBT 600V 80A 349W TO-247-3
Packaging: Tube
Package / Case: TO-247-3
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 175°C (TJ)
Input Type: Standard
Reverse Recovery Time (trr): 47 ns
Vce(on) (Max) @ Vge, Ic: 2.5V @ 15V, 40A
Supplier Device Package: TO-247-3
IGBT Type: Field Stop
Td (on/off) @ 25°C: 18ns/110ns
Switching Energy: 920µJ (on), 300µJ (off)
Test Condition: 400V, 40A, 6Ohm, 15V
Gate Charge: 180 nC
Part Status: Active
Current - Collector (Ic) (Max): 80 A
Voltage - Collector Emitter Breakdown (Max): 600 V
Current - Collector Pulsed (Icm): 120 A
Power - Max: 349 W
Grade: Automotive
Qualification: AEC-Q101
на замовлення 248 шт:
термін постачання 21-31 дні (днів)Кількість | Ціна без ПДВ |
---|---|
1+ | 416.22 грн |
30+ | 319.73 грн |
120+ | 286.06 грн |
FGH40N60UFDTU |
Виробник: onsemi
Description: IGBT FIELD STOP 600V 80A TO247-3
Packaging: Tube
Package / Case: TO-247-3
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Input Type: Standard
Reverse Recovery Time (trr): 45 ns
Vce(on) (Max) @ Vge, Ic: 2.4V @ 15V, 40A
Supplier Device Package: TO-247-3
IGBT Type: Field Stop
Td (on/off) @ 25°C: 24ns/112ns
Switching Energy: 1.19mJ (on), 460µJ (off)
Test Condition: 400V, 40A, 10Ohm, 15V
Gate Charge: 120 nC
Part Status: Active
Current - Collector (Ic) (Max): 80 A
Voltage - Collector Emitter Breakdown (Max): 600 V
Current - Collector Pulsed (Icm): 120 A
Power - Max: 290 W
Description: IGBT FIELD STOP 600V 80A TO247-3
Packaging: Tube
Package / Case: TO-247-3
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Input Type: Standard
Reverse Recovery Time (trr): 45 ns
Vce(on) (Max) @ Vge, Ic: 2.4V @ 15V, 40A
Supplier Device Package: TO-247-3
IGBT Type: Field Stop
Td (on/off) @ 25°C: 24ns/112ns
Switching Energy: 1.19mJ (on), 460µJ (off)
Test Condition: 400V, 40A, 10Ohm, 15V
Gate Charge: 120 nC
Part Status: Active
Current - Collector (Ic) (Max): 80 A
Voltage - Collector Emitter Breakdown (Max): 600 V
Current - Collector Pulsed (Icm): 120 A
Power - Max: 290 W
на замовлення 304 шт:
термін постачання 21-31 дні (днів)Кількість | Ціна без ПДВ |
---|---|
1+ | 307.17 грн |
30+ | 234.3 грн |
120+ | 200.83 грн |
FGI40N60SFTU |
Виробник: Fairchild Semiconductor
Description: IGBT, 80A, 600V, N-CHANNEL
Packaging: Tube
Package / Case: TO-262-3 Long Leads, I2PAK, TO-262AA
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Input Type: Standard
Vce(on) (Max) @ Vge, Ic: 2.9V @ 15V, 40A
Supplier Device Package: TO-262 (I2PAK)
IGBT Type: Field Stop
Td (on/off) @ 25°C: 25ns/115ns
Switching Energy: 1.13mJ (on), 310µJ (off)
Test Condition: 400V, 40A, 10Ohm, 15V
Gate Charge: 120 nC
Current - Collector (Ic) (Max): 80 A
Voltage - Collector Emitter Breakdown (Max): 600 V
Current - Collector Pulsed (Icm): 120 A
Power - Max: 290 W
Description: IGBT, 80A, 600V, N-CHANNEL
Packaging: Tube
Package / Case: TO-262-3 Long Leads, I2PAK, TO-262AA
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Input Type: Standard
Vce(on) (Max) @ Vge, Ic: 2.9V @ 15V, 40A
Supplier Device Package: TO-262 (I2PAK)
IGBT Type: Field Stop
Td (on/off) @ 25°C: 25ns/115ns
Switching Energy: 1.13mJ (on), 310µJ (off)
Test Condition: 400V, 40A, 10Ohm, 15V
Gate Charge: 120 nC
Current - Collector (Ic) (Max): 80 A
Voltage - Collector Emitter Breakdown (Max): 600 V
Current - Collector Pulsed (Icm): 120 A
Power - Max: 290 W
на замовлення 1800 шт:
термін постачання 21-31 дні (днів)Кількість | Ціна без ПДВ |
---|---|
84+ | 236.26 грн |
HGTG40N60A4 |
Виробник: ON-Semicoductor
Trans IGBT Chip N-CH 600V 75A 625000mW 3-Pin(3+Tab) TO-247 HGTG40N60A4 THGTG40n60a4
кількість в упаковці: 2 шт
Trans IGBT Chip N-CH 600V 75A 625000mW 3-Pin(3+Tab) TO-247 HGTG40N60A4 THGTG40n60a4
кількість в упаковці: 2 шт
на замовлення 19 шт:
термін постачання 28-31 дні (днів)Кількість | Ціна без ПДВ |
---|---|
2+ | 491.84 грн |
HGTG40N60C3 |
Виробник: Harris Corporation
Description: 75A, 600V, N-CHANNEL IGBT
Packaging: Bulk
Package / Case: TO-247-3
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Input Type: Standard
Vce(on) (Max) @ Vge, Ic: 1.8V @ 15V, 40A
Supplier Device Package: TO-247
Td (on/off) @ 25°C: 47ns/185ns
Switching Energy: 850mJ (on), 1mJ (off)
Test Condition: 480V, 40A, 3Ohm, 15V
Gate Charge: 395 nC
Part Status: Active
Current - Collector (Ic) (Max): 75 A
Voltage - Collector Emitter Breakdown (Max): 600 V
Current - Collector Pulsed (Icm): 300 A
Power - Max: 291 W
Description: 75A, 600V, N-CHANNEL IGBT
Packaging: Bulk
Package / Case: TO-247-3
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Input Type: Standard
Vce(on) (Max) @ Vge, Ic: 1.8V @ 15V, 40A
Supplier Device Package: TO-247
Td (on/off) @ 25°C: 47ns/185ns
Switching Energy: 850mJ (on), 1mJ (off)
Test Condition: 480V, 40A, 3Ohm, 15V
Gate Charge: 395 nC
Part Status: Active
Current - Collector (Ic) (Max): 75 A
Voltage - Collector Emitter Breakdown (Max): 600 V
Current - Collector Pulsed (Icm): 300 A
Power - Max: 291 W
на замовлення 89 шт:
термін постачання 21-31 дні (днів)Кількість | Ціна без ПДВ |
---|---|
50+ | 399.47 грн |
HGTG40N60C3R |
Виробник: Harris Corporation
Description: 75A, 600V N-CHANNEL IGBT
Packaging: Bulk
Package / Case: TO-247-3
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Input Type: Standard
Vce(on) (Max) @ Vge, Ic: 2.2V @ 15V, 40A
Supplier Device Package: TO-247
Gate Charge: 330 nC
Part Status: Active
Current - Collector (Ic) (Max): 75 A
Voltage - Collector Emitter Breakdown (Max): 600 V
Current - Collector Pulsed (Icm): 200 A
Power - Max: 291 W
Description: 75A, 600V N-CHANNEL IGBT
Packaging: Bulk
Package / Case: TO-247-3
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Input Type: Standard
Vce(on) (Max) @ Vge, Ic: 2.2V @ 15V, 40A
Supplier Device Package: TO-247
Gate Charge: 330 nC
Part Status: Active
Current - Collector (Ic) (Max): 75 A
Voltage - Collector Emitter Breakdown (Max): 600 V
Current - Collector Pulsed (Icm): 200 A
Power - Max: 291 W
на замовлення 45 шт:
термін постачання 21-31 дні (днів)Кількість | Ціна без ПДВ |
---|---|
45+ | 551.49 грн |
IGW40N60H3FKSA1 |
Виробник: INFINEON TECHNOLOGIES
Category: THT IGBT transistors
Description: Transistor: IGBT; 600V; 40A; 306W; TO247-3; H3
Type of transistor: IGBT
Technology: TRENCHSTOP™ 3
Collector-emitter voltage: 600V
Collector current: 40A
Power dissipation: 306W
Case: TO247-3
Gate-emitter voltage: ±20V
Mounting: THT
Kind of package: tube
Manufacturer series: H3
кількість в упаковці: 1 шт
Category: THT IGBT transistors
Description: Transistor: IGBT; 600V; 40A; 306W; TO247-3; H3
Type of transistor: IGBT
Technology: TRENCHSTOP™ 3
Collector-emitter voltage: 600V
Collector current: 40A
Power dissipation: 306W
Case: TO247-3
Gate-emitter voltage: ±20V
Mounting: THT
Kind of package: tube
Manufacturer series: H3
кількість в упаковці: 1 шт
товар відсутній
IGW40N60H3FKSA1 |
Виробник: Infineon Technologies
Description: IGBT TRENCH FS 600V 80A TO247-3
Packaging: Tube
Package / Case: TO-247-3
Mounting Type: Through Hole
Operating Temperature: -40°C ~ 175°C (TJ)
Input Type: Standard
Vce(on) (Max) @ Vge, Ic: 2.4V @ 15V, 40A
Supplier Device Package: PG-TO247-3-1
IGBT Type: Trench Field Stop
Td (on/off) @ 25°C: 19ns/197ns
Switching Energy: 1.68mJ
Test Condition: 400V, 40A, 7.9Ohm, 15V
Gate Charge: 223 nC
Part Status: Active
Current - Collector (Ic) (Max): 80 A
Voltage - Collector Emitter Breakdown (Max): 600 V
Current - Collector Pulsed (Icm): 160 A
Power - Max: 306 W
Description: IGBT TRENCH FS 600V 80A TO247-3
Packaging: Tube
Package / Case: TO-247-3
Mounting Type: Through Hole
Operating Temperature: -40°C ~ 175°C (TJ)
Input Type: Standard
Vce(on) (Max) @ Vge, Ic: 2.4V @ 15V, 40A
Supplier Device Package: PG-TO247-3-1
IGBT Type: Trench Field Stop
Td (on/off) @ 25°C: 19ns/197ns
Switching Energy: 1.68mJ
Test Condition: 400V, 40A, 7.9Ohm, 15V
Gate Charge: 223 nC
Part Status: Active
Current - Collector (Ic) (Max): 80 A
Voltage - Collector Emitter Breakdown (Max): 600 V
Current - Collector Pulsed (Icm): 160 A
Power - Max: 306 W
на замовлення 168 шт:
термін постачання 21-31 дні (днів)Кількість | Ціна без ПДВ |
---|---|
1+ | 294.34 грн |
30+ | 224.4 грн |
120+ | 192.35 грн |
IGW40N60H3FKSA1 |
Виробник: Infineon Technologies
Trans IGBT Chip N-CH 600V 80A 306000mW 3-Pin(3+Tab) TO-247 Tube
Trans IGBT Chip N-CH 600V 80A 306000mW 3-Pin(3+Tab) TO-247 Tube
на замовлення 245 шт:
термін постачання 21-31 дні (днів)Кількість | Ціна без ПДВ |
---|---|
3+ | 146.81 грн |
IGW40N60H3FKSA1 |
на замовлення 10 шт:
термін постачання 28-31 дні (днів)Кількість | Ціна без ПДВ |
---|---|
5+ | 227.28 грн |
IGW40N60TPXKSA1 |
Виробник: Infineon Technologies
Description: IGBT TRENCH/FS 600V 67A TO247-3
Packaging: Tube
Package / Case: TO-247-3
Mounting Type: Through Hole
Operating Temperature: -40°C ~ 175°C (TJ)
Input Type: Standard
Vce(on) (Max) @ Vge, Ic: 1.8V @ 15V, 40A
Supplier Device Package: PG-TO247-3
IGBT Type: Trench Field Stop
Td (on/off) @ 25°C: 18ns/222ns
Switching Energy: 1.06mJ (on), 610µJ (off)
Test Condition: 400V, 40A, 10.1Ohm, 15V
Gate Charge: 177 nC
Part Status: Not For New Designs
Current - Collector (Ic) (Max): 67 A
Voltage - Collector Emitter Breakdown (Max): 600 V
Current - Collector Pulsed (Icm): 120 A
Power - Max: 246 W
Description: IGBT TRENCH/FS 600V 67A TO247-3
Packaging: Tube
Package / Case: TO-247-3
Mounting Type: Through Hole
Operating Temperature: -40°C ~ 175°C (TJ)
Input Type: Standard
Vce(on) (Max) @ Vge, Ic: 1.8V @ 15V, 40A
Supplier Device Package: PG-TO247-3
IGBT Type: Trench Field Stop
Td (on/off) @ 25°C: 18ns/222ns
Switching Energy: 1.06mJ (on), 610µJ (off)
Test Condition: 400V, 40A, 10.1Ohm, 15V
Gate Charge: 177 nC
Part Status: Not For New Designs
Current - Collector (Ic) (Max): 67 A
Voltage - Collector Emitter Breakdown (Max): 600 V
Current - Collector Pulsed (Icm): 120 A
Power - Max: 246 W
на замовлення 428 шт:
термін постачання 21-31 дні (днів)Кількість | Ціна без ПДВ |
---|---|
2+ | 187.44 грн |
30+ | 145.2 грн |
120+ | 119.49 грн |
IHW40N60RFFKSA1 |
Виробник: Infineon Technologies
Description: IGBT TRENCH 600V 80A TO247-3
Packaging: Tube
Package / Case: TO-247-3
Mounting Type: Through Hole
Operating Temperature: -40°C ~ 175°C (TJ)
Input Type: Standard
Vce(on) (Max) @ Vge, Ic: 2.4V @ 15V, 40A
Supplier Device Package: PG-TO247-3-1
IGBT Type: Trench
Td (on/off) @ 25°C: -/175ns
Switching Energy: 560µJ (off)
Test Condition: 400V, 40A, 5.6Ohm, 15V
Gate Charge: 220 nC
Current - Collector (Ic) (Max): 80 A
Voltage - Collector Emitter Breakdown (Max): 600 V
Current - Collector Pulsed (Icm): 120 A
Power - Max: 305 W
Description: IGBT TRENCH 600V 80A TO247-3
Packaging: Tube
Package / Case: TO-247-3
Mounting Type: Through Hole
Operating Temperature: -40°C ~ 175°C (TJ)
Input Type: Standard
Vce(on) (Max) @ Vge, Ic: 2.4V @ 15V, 40A
Supplier Device Package: PG-TO247-3-1
IGBT Type: Trench
Td (on/off) @ 25°C: -/175ns
Switching Energy: 560µJ (off)
Test Condition: 400V, 40A, 5.6Ohm, 15V
Gate Charge: 220 nC
Current - Collector (Ic) (Max): 80 A
Voltage - Collector Emitter Breakdown (Max): 600 V
Current - Collector Pulsed (Icm): 120 A
Power - Max: 305 W
на замовлення 639 шт:
термін постачання 21-31 дні (днів)Кількість | Ціна без ПДВ |
---|---|
123+ | 160.58 грн |
IHW40N60RFKSA1 |
Виробник: Infineon Technologies
Description: IGBT TRENCH 600V 80A TO247-3
Packaging: Tube
Package / Case: TO-247-3
Mounting Type: Through Hole
Operating Temperature: -40°C ~ 175°C (TJ)
Input Type: Standard
Vce(on) (Max) @ Vge, Ic: 2.05V @ 15V, 40A
Supplier Device Package: PG-TO247-3-1
IGBT Type: Trench
Td (on/off) @ 25°C: -/193ns
Switching Energy: 750µJ (off)
Test Condition: 400V, 40A, 5.6Ohm, 15V
Gate Charge: 223 nC
Current - Collector (Ic) (Max): 80 A
Voltage - Collector Emitter Breakdown (Max): 600 V
Current - Collector Pulsed (Icm): 120 A
Power - Max: 305 W
Description: IGBT TRENCH 600V 80A TO247-3
Packaging: Tube
Package / Case: TO-247-3
Mounting Type: Through Hole
Operating Temperature: -40°C ~ 175°C (TJ)
Input Type: Standard
Vce(on) (Max) @ Vge, Ic: 2.05V @ 15V, 40A
Supplier Device Package: PG-TO247-3-1
IGBT Type: Trench
Td (on/off) @ 25°C: -/193ns
Switching Energy: 750µJ (off)
Test Condition: 400V, 40A, 5.6Ohm, 15V
Gate Charge: 223 nC
Current - Collector (Ic) (Max): 80 A
Voltage - Collector Emitter Breakdown (Max): 600 V
Current - Collector Pulsed (Icm): 120 A
Power - Max: 305 W
на замовлення 544 шт:
термін постачання 21-31 дні (днів)Кількість | Ціна без ПДВ |
---|---|
121+ | 164.53 грн |
IKFW40N60DH3EXKSA1 |
Виробник: Infineon Technologies
Description: IGBT TRENCH FS 600V 34A TO247-3
Packaging: Tube
Package / Case: TO-247-3
Mounting Type: Through Hole
Operating Temperature: -40°C ~ 175°C (TJ)
Input Type: Standard
Reverse Recovery Time (trr): 72 ns
Vce(on) (Max) @ Vge, Ic: 2.7V @ 15V, 30A
Supplier Device Package: PG-TO247-3-AI
IGBT Type: Trench Field Stop
Td (on/off) @ 25°C: 18ns/144ns
Switching Energy: 870µJ (on), 360µJ (off)
Test Condition: 400V, 30A, 10Ohm, 15V
Gate Charge: 107 nC
Part Status: Active
Current - Collector (Ic) (Max): 34 A
Voltage - Collector Emitter Breakdown (Max): 600 V
Current - Collector Pulsed (Icm): 90 A
Power - Max: 111 W
Description: IGBT TRENCH FS 600V 34A TO247-3
Packaging: Tube
Package / Case: TO-247-3
Mounting Type: Through Hole
Operating Temperature: -40°C ~ 175°C (TJ)
Input Type: Standard
Reverse Recovery Time (trr): 72 ns
Vce(on) (Max) @ Vge, Ic: 2.7V @ 15V, 30A
Supplier Device Package: PG-TO247-3-AI
IGBT Type: Trench Field Stop
Td (on/off) @ 25°C: 18ns/144ns
Switching Energy: 870µJ (on), 360µJ (off)
Test Condition: 400V, 30A, 10Ohm, 15V
Gate Charge: 107 nC
Part Status: Active
Current - Collector (Ic) (Max): 34 A
Voltage - Collector Emitter Breakdown (Max): 600 V
Current - Collector Pulsed (Icm): 90 A
Power - Max: 111 W
на замовлення 220 шт:
термін постачання 21-31 дні (днів)Кількість | Ціна без ПДВ |
---|---|
1+ | 371.32 грн |
30+ | 283.15 грн |
120+ | 242.69 грн |
IKW40N60DTPXKSA1 |
Виробник: Infineon Technologies
Description: IGBT TRENCH FS 600V 67A TO247-3
Packaging: Tube
Package / Case: TO-247-3
Mounting Type: Through Hole
Operating Temperature: -40°C ~ 175°C (TJ)
Input Type: Standard
Reverse Recovery Time (trr): 87 ns
Vce(on) (Max) @ Vge, Ic: 1.8V @ 15V, 40A
Supplier Device Package: PG-TO247-3
IGBT Type: Trench Field Stop
Td (on/off) @ 25°C: 18ns/222ns
Switching Energy: 1.06mJ (on), 610µJ (off)
Test Condition: 400V, 40A, 10.1Ohm, 15V
Gate Charge: 177 nC
Part Status: Not For New Designs
Current - Collector (Ic) (Max): 67 A
Voltage - Collector Emitter Breakdown (Max): 600 V
Current - Collector Pulsed (Icm): 120 A
Power - Max: 246 W
Description: IGBT TRENCH FS 600V 67A TO247-3
Packaging: Tube
Package / Case: TO-247-3
Mounting Type: Through Hole
Operating Temperature: -40°C ~ 175°C (TJ)
Input Type: Standard
Reverse Recovery Time (trr): 87 ns
Vce(on) (Max) @ Vge, Ic: 1.8V @ 15V, 40A
Supplier Device Package: PG-TO247-3
IGBT Type: Trench Field Stop
Td (on/off) @ 25°C: 18ns/222ns
Switching Energy: 1.06mJ (on), 610µJ (off)
Test Condition: 400V, 40A, 10.1Ohm, 15V
Gate Charge: 177 nC
Part Status: Not For New Designs
Current - Collector (Ic) (Max): 67 A
Voltage - Collector Emitter Breakdown (Max): 600 V
Current - Collector Pulsed (Icm): 120 A
Power - Max: 246 W
на замовлення 108 шт:
термін постачання 21-31 дні (днів)Кількість | Ціна без ПДВ |
---|---|
2+ | 202.41 грн |
30+ | 154.78 грн |
IKW40N60H3FKSA1 |
Виробник: INFINEON TECHNOLOGIES
Category: THT IGBT transistors
Description: Transistor: IGBT; 600V; 40A; 153W; TO247-3
Type of transistor: IGBT
Technology: TRENCHSTOP™
Collector-emitter voltage: 600V
Collector current: 40A
Power dissipation: 153W
Case: TO247-3
Gate-emitter voltage: ±20V
Pulsed collector current: 160A
Mounting: THT
Gate charge: 223nC
Kind of package: tube
Turn-on time: 52ns
Turn-off time: 218ns
Features of semiconductor devices: integrated anti-parallel diode
Category: THT IGBT transistors
Description: Transistor: IGBT; 600V; 40A; 153W; TO247-3
Type of transistor: IGBT
Technology: TRENCHSTOP™
Collector-emitter voltage: 600V
Collector current: 40A
Power dissipation: 153W
Case: TO247-3
Gate-emitter voltage: ±20V
Pulsed collector current: 160A
Mounting: THT
Gate charge: 223nC
Kind of package: tube
Turn-on time: 52ns
Turn-off time: 218ns
Features of semiconductor devices: integrated anti-parallel diode
на замовлення 40 шт:
термін постачання 21-30 дні (днів)Кількість | Ціна без ПДВ |
---|---|
1+ | 405.76 грн |
3+ | 339.03 грн |
4+ | 259.42 грн |
9+ | 245.01 грн |
IKW40N60H3FKSA1 |
Виробник: INFINEON TECHNOLOGIES
Category: THT IGBT transistors
Description: Transistor: IGBT; 600V; 40A; 153W; TO247-3
Type of transistor: IGBT
Technology: TRENCHSTOP™
Collector-emitter voltage: 600V
Collector current: 40A
Power dissipation: 153W
Case: TO247-3
Gate-emitter voltage: ±20V
Pulsed collector current: 160A
Mounting: THT
Gate charge: 223nC
Kind of package: tube
Turn-on time: 52ns
Turn-off time: 218ns
Features of semiconductor devices: integrated anti-parallel diode
кількість в упаковці: 1 шт
Category: THT IGBT transistors
Description: Transistor: IGBT; 600V; 40A; 153W; TO247-3
Type of transistor: IGBT
Technology: TRENCHSTOP™
Collector-emitter voltage: 600V
Collector current: 40A
Power dissipation: 153W
Case: TO247-3
Gate-emitter voltage: ±20V
Pulsed collector current: 160A
Mounting: THT
Gate charge: 223nC
Kind of package: tube
Turn-on time: 52ns
Turn-off time: 218ns
Features of semiconductor devices: integrated anti-parallel diode
кількість в упаковці: 1 шт
на замовлення 40 шт:
термін постачання 7-14 дні (днів)Кількість | Ціна без ПДВ |
---|---|
1+ | 486.92 грн |
3+ | 422.49 грн |
4+ | 311.31 грн |
9+ | 294.01 грн |
IKW40N60H3FKSA1 |
Виробник: Infineon Technologies
Description: IGBT TRENCH FS 600V 80A TO247-3
Packaging: Tube
Package / Case: TO-247-3
Mounting Type: Through Hole
Operating Temperature: -40°C ~ 175°C (TJ)
Input Type: Standard
Reverse Recovery Time (trr): 124 ns
Vce(on) (Max) @ Vge, Ic: 2.4V @ 15V, 40A
Supplier Device Package: PG-TO247-3-1
IGBT Type: Trench Field Stop
Td (on/off) @ 25°C: 19ns/197ns
Switching Energy: 1.68mJ
Test Condition: 400V, 40A, 7.9Ohm, 15V
Gate Charge: 223 nC
Part Status: Active
Current - Collector (Ic) (Max): 80 A
Voltage - Collector Emitter Breakdown (Max): 600 V
Current - Collector Pulsed (Icm): 160 A
Power - Max: 306 W
Description: IGBT TRENCH FS 600V 80A TO247-3
Packaging: Tube
Package / Case: TO-247-3
Mounting Type: Through Hole
Operating Temperature: -40°C ~ 175°C (TJ)
Input Type: Standard
Reverse Recovery Time (trr): 124 ns
Vce(on) (Max) @ Vge, Ic: 2.4V @ 15V, 40A
Supplier Device Package: PG-TO247-3-1
IGBT Type: Trench Field Stop
Td (on/off) @ 25°C: 19ns/197ns
Switching Energy: 1.68mJ
Test Condition: 400V, 40A, 7.9Ohm, 15V
Gate Charge: 223 nC
Part Status: Active
Current - Collector (Ic) (Max): 80 A
Voltage - Collector Emitter Breakdown (Max): 600 V
Current - Collector Pulsed (Icm): 160 A
Power - Max: 306 W
на замовлення 1292 шт:
термін постачання 21-31 дні (днів)Кількість | Ціна без ПДВ |
---|---|
1+ | 346.37 грн |
30+ | 264.41 грн |
120+ | 226.63 грн |
510+ | 189.06 грн |
1020+ | 161.88 грн |
IRFPS40N60K |
Виробник: Siliconix
Transistor N-Channel MOSFET; 600V; 30V; 130mOhm; 40A; 570W; -55°C ~ 150°C; IRFPS40N60K TIRFPS40n60k
кількість в упаковці: 2 шт
Transistor N-Channel MOSFET; 600V; 30V; 130mOhm; 40A; 570W; -55°C ~ 150°C; IRFPS40N60K TIRFPS40n60k
кількість в упаковці: 2 шт
на замовлення 20 шт:
термін постачання 28-31 дні (днів)Кількість | Ціна без ПДВ |
---|---|
2+ | 324.93 грн |
MGY40N60 |
на замовлення 12095 шт:
термін постачання 21-31 дні (днів)Кількість | Ціна без ПДВ |
---|---|
66+ | 301.42 грн |
MGY40N60D |
на замовлення 1588 шт:
термін постачання 21-31 дні (днів)Кількість | Ціна без ПДВ |
---|---|
62+ | 321.82 грн |
NGTB40N60IHLWG |
Виробник: onsemi
Description: IGBT 600V 40A TO247
Packaging: Tube
Package / Case: TO-247-3
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Input Type: Standard
Reverse Recovery Time (trr): 400 ns
Vce(on) (Max) @ Vge, Ic: 2.4V @ 15V, 40A
Supplier Device Package: TO-247-3
IGBT Type: Trench Field Stop
Td (on/off) @ 25°C: 70ns/140ns
Switching Energy: 400µJ (off)
Test Condition: 400V, 40A, 10Ohm, 15V
Gate Charge: 130 nC
Current - Collector (Ic) (Max): 80 A
Voltage - Collector Emitter Breakdown (Max): 600 V
Current - Collector Pulsed (Icm): 200 A
Power - Max: 250 W
Description: IGBT 600V 40A TO247
Packaging: Tube
Package / Case: TO-247-3
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Input Type: Standard
Reverse Recovery Time (trr): 400 ns
Vce(on) (Max) @ Vge, Ic: 2.4V @ 15V, 40A
Supplier Device Package: TO-247-3
IGBT Type: Trench Field Stop
Td (on/off) @ 25°C: 70ns/140ns
Switching Energy: 400µJ (off)
Test Condition: 400V, 40A, 10Ohm, 15V
Gate Charge: 130 nC
Current - Collector (Ic) (Max): 80 A
Voltage - Collector Emitter Breakdown (Max): 600 V
Current - Collector Pulsed (Icm): 200 A
Power - Max: 250 W
на замовлення 452462 шт:
термін постачання 21-31 дні (днів)Кількість | Ціна без ПДВ |
---|---|
123+ | 160.58 грн |
NGTB40N60L2WG |
Виробник: onsemi
Description: IGBT TRENCH/FS 600V 80A TO247
Packaging: Bulk
Package / Case: TO-247-3
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 175°C (TJ)
Input Type: Standard
Reverse Recovery Time (trr): 73 ns
Vce(on) (Max) @ Vge, Ic: 2.61V @ 15V, 40A
Supplier Device Package: TO-247-3
IGBT Type: Trench Field Stop
Td (on/off) @ 25°C: 98ns/213ns
Switching Energy: 1.17mJ (on), 280µJ (off)
Test Condition: 400V, 40A, 10Ohm, 15V
Gate Charge: 228 nC
Current - Collector (Ic) (Max): 80 A
Voltage - Collector Emitter Breakdown (Max): 600 V
Current - Collector Pulsed (Icm): 160 A
Power - Max: 417 W
Description: IGBT TRENCH/FS 600V 80A TO247
Packaging: Bulk
Package / Case: TO-247-3
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 175°C (TJ)
Input Type: Standard
Reverse Recovery Time (trr): 73 ns
Vce(on) (Max) @ Vge, Ic: 2.61V @ 15V, 40A
Supplier Device Package: TO-247-3
IGBT Type: Trench Field Stop
Td (on/off) @ 25°C: 98ns/213ns
Switching Energy: 1.17mJ (on), 280µJ (off)
Test Condition: 400V, 40A, 10Ohm, 15V
Gate Charge: 228 nC
Current - Collector (Ic) (Max): 80 A
Voltage - Collector Emitter Breakdown (Max): 600 V
Current - Collector Pulsed (Icm): 160 A
Power - Max: 417 W
на замовлення 2092 шт:
термін постачання 21-31 дні (днів)Кількість | Ціна без ПДВ |
---|---|
88+ | 226.39 грн |
NVHL040N60S5F |
Виробник: onsemi
Description: SUPERFET5 FRFET, 40MOHM, TO-247-
Packaging: Tube
Package / Case: TO-247-3
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 59A (Tc)
Rds On (Max) @ Id, Vgs: 40mOhm @ 29.5A, 10V
Power Dissipation (Max): 347W (Tc)
Vgs(th) (Max) @ Id: 4.8V @ 7.2mA
Supplier Device Package: TO-247-3
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±30V
Drain to Source Voltage (Vdss): 600 V
Gate Charge (Qg) (Max) @ Vgs: 115 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 6318 pF @ 400 V
Description: SUPERFET5 FRFET, 40MOHM, TO-247-
Packaging: Tube
Package / Case: TO-247-3
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 59A (Tc)
Rds On (Max) @ Id, Vgs: 40mOhm @ 29.5A, 10V
Power Dissipation (Max): 347W (Tc)
Vgs(th) (Max) @ Id: 4.8V @ 7.2mA
Supplier Device Package: TO-247-3
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±30V
Drain to Source Voltage (Vdss): 600 V
Gate Charge (Qg) (Max) @ Vgs: 115 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 6318 pF @ 400 V
на замовлення 363 шт:
термін постачання 21-31 дні (днів)Кількість | Ціна без ПДВ |
---|---|
1+ | 672.08 грн |
10+ | 554.4 грн |
SGH40N60UFDTU |
Виробник: onsemi
Description: IGBT 600V 40A 160W TO3P
Packaging: Bulk
Package / Case: TO-3P-3, SC-65-3
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Input Type: Standard
Reverse Recovery Time (trr): 60 ns
Vce(on) (Max) @ Vge, Ic: 2.6V @ 15V, 20A
Supplier Device Package: TO-3P
Td (on/off) @ 25°C: 15ns/65ns
Switching Energy: 160µJ (on), 200µJ (off)
Test Condition: 300V, 20A, 10Ohm, 15V
Gate Charge: 97 nC
Part Status: Obsolete
Current - Collector (Ic) (Max): 40 A
Voltage - Collector Emitter Breakdown (Max): 600 V
Current - Collector Pulsed (Icm): 160 A
Power - Max: 160 W
Description: IGBT 600V 40A 160W TO3P
Packaging: Bulk
Package / Case: TO-3P-3, SC-65-3
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Input Type: Standard
Reverse Recovery Time (trr): 60 ns
Vce(on) (Max) @ Vge, Ic: 2.6V @ 15V, 20A
Supplier Device Package: TO-3P
Td (on/off) @ 25°C: 15ns/65ns
Switching Energy: 160µJ (on), 200µJ (off)
Test Condition: 300V, 20A, 10Ohm, 15V
Gate Charge: 97 nC
Part Status: Obsolete
Current - Collector (Ic) (Max): 40 A
Voltage - Collector Emitter Breakdown (Max): 600 V
Current - Collector Pulsed (Icm): 160 A
Power - Max: 160 W
на замовлення 195573 шт:
термін постачання 21-31 дні (днів)Кількість | Ціна без ПДВ |
---|---|
129+ | 153.34 грн |
SGH40N60UFTU |
Виробник: Fairchild Semiconductor
Description: INSULATED GATE BIPOLAR TRANSISTO
Packaging: Bulk
Package / Case: TO-3P-3, SC-65-3
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Input Type: Standard
Vce(on) (Max) @ Vge, Ic: 2.6V @ 15V, 20A
Supplier Device Package: TO-3P
Td (on/off) @ 25°C: 15ns/65ns
Switching Energy: 160µJ (on), 200µJ (off)
Test Condition: 300V, 20A, 10Ohm, 15V
Gate Charge: 97 nC
Part Status: Active
Current - Collector (Ic) (Max): 40 A
Voltage - Collector Emitter Breakdown (Max): 600 V
Current - Collector Pulsed (Icm): 160 A
Power - Max: 160 W
Description: INSULATED GATE BIPOLAR TRANSISTO
Packaging: Bulk
Package / Case: TO-3P-3, SC-65-3
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Input Type: Standard
Vce(on) (Max) @ Vge, Ic: 2.6V @ 15V, 20A
Supplier Device Package: TO-3P
Td (on/off) @ 25°C: 15ns/65ns
Switching Energy: 160µJ (on), 200µJ (off)
Test Condition: 300V, 20A, 10Ohm, 15V
Gate Charge: 97 nC
Part Status: Active
Current - Collector (Ic) (Max): 40 A
Voltage - Collector Emitter Breakdown (Max): 600 V
Current - Collector Pulsed (Icm): 160 A
Power - Max: 160 W
на замовлення 900 шт:
термін постачання 21-31 дні (днів)Кількість | Ціна без ПДВ |
---|---|
80+ | 249.42 грн |
SGH40N60UFTU |
Виробник: onsemi
Description: IGBT 600V 40A TO3P
Packaging: Bulk
Package / Case: TO-3P-3, SC-65-3
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Input Type: Standard
Vce(on) (Max) @ Vge, Ic: 2.6V @ 15V, 20A
Supplier Device Package: TO-3P
Td (on/off) @ 25°C: 15ns/65ns
Switching Energy: 160µJ (on), 200µJ (off)
Test Condition: 300V, 20A, 10Ohm, 15V
Gate Charge: 97 nC
Current - Collector (Ic) (Max): 40 A
Voltage - Collector Emitter Breakdown (Max): 600 V
Current - Collector Pulsed (Icm): 160 A
Power - Max: 160 W
Description: IGBT 600V 40A TO3P
Packaging: Bulk
Package / Case: TO-3P-3, SC-65-3
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Input Type: Standard
Vce(on) (Max) @ Vge, Ic: 2.6V @ 15V, 20A
Supplier Device Package: TO-3P
Td (on/off) @ 25°C: 15ns/65ns
Switching Energy: 160µJ (on), 200µJ (off)
Test Condition: 300V, 20A, 10Ohm, 15V
Gate Charge: 97 nC
Current - Collector (Ic) (Max): 40 A
Voltage - Collector Emitter Breakdown (Max): 600 V
Current - Collector Pulsed (Icm): 160 A
Power - Max: 160 W
на замовлення 108626 шт:
термін постачання 21-31 дні (днів)Кількість | Ціна без ПДВ |
---|---|
80+ | 249.42 грн |
SGP40N60UFTU |
Виробник: Fairchild Semiconductor
Description: N-CHANNEL IGBT
Packaging: Tube
Package / Case: TO-220-3
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Input Type: Standard
Vce(on) (Max) @ Vge, Ic: 2.6V @ 15V, 20A
Supplier Device Package: TO-220-3
Td (on/off) @ 25°C: 15ns/65ns
Switching Energy: 160µJ (on), 200µJ (off)
Test Condition: 300V, 20A, 10Ohm, 15V
Gate Charge: 97 nC
Part Status: Obsolete
Current - Collector (Ic) (Max): 40 A
Voltage - Collector Emitter Breakdown (Max): 600 V
Current - Collector Pulsed (Icm): 160 A
Power - Max: 160 W
Description: N-CHANNEL IGBT
Packaging: Tube
Package / Case: TO-220-3
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Input Type: Standard
Vce(on) (Max) @ Vge, Ic: 2.6V @ 15V, 20A
Supplier Device Package: TO-220-3
Td (on/off) @ 25°C: 15ns/65ns
Switching Energy: 160µJ (on), 200µJ (off)
Test Condition: 300V, 20A, 10Ohm, 15V
Gate Charge: 97 nC
Part Status: Obsolete
Current - Collector (Ic) (Max): 40 A
Voltage - Collector Emitter Breakdown (Max): 600 V
Current - Collector Pulsed (Icm): 160 A
Power - Max: 160 W
на замовлення 51224 шт:
термін постачання 21-31 дні (днів)Кількість | Ціна без ПДВ |
---|---|
80+ | 248.77 грн |
SIHD240N60E-GE3 |
Виробник: Vishay Siliconix
Description: MOSFET N-CH 600V 12A DPAK
Packaging: Tube
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 12A (Tc)
Rds On (Max) @ Id, Vgs: 240mOhm @ 5.5A, 10V
Power Dissipation (Max): 78W (Tc)
Vgs(th) (Max) @ Id: 5V @ 250µA
Supplier Device Package: TO-252AA
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±30V
Drain to Source Voltage (Vdss): 600 V
Gate Charge (Qg) (Max) @ Vgs: 23 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 783 pF @ 100 V
Description: MOSFET N-CH 600V 12A DPAK
Packaging: Tube
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 12A (Tc)
Rds On (Max) @ Id, Vgs: 240mOhm @ 5.5A, 10V
Power Dissipation (Max): 78W (Tc)
Vgs(th) (Max) @ Id: 5V @ 250µA
Supplier Device Package: TO-252AA
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±30V
Drain to Source Voltage (Vdss): 600 V
Gate Charge (Qg) (Max) @ Vgs: 23 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 783 pF @ 100 V
на замовлення 3070 шт:
термін постачання 21-31 дні (днів)Кількість | Ціна без ПДВ |
---|---|
2+ | 161.07 грн |
10+ | 129.09 грн |
100+ | 102.72 грн |
500+ | 81.57 грн |
1000+ | 69.21 грн |
3000+ | 65.75 грн |
SIHFPS40N60K-GE3 |
Виробник: Vishay Siliconix
Description: POWER MOSFET SUPER-247, 130 M @
Packaging: Tube
Package / Case: TO-274AA
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 40A (Tc)
Rds On (Max) @ Id, Vgs: 130mOhm @ 24A, 10V
Power Dissipation (Max): 570W (Tc)
Vgs(th) (Max) @ Id: 5V @ 250µA
Supplier Device Package: SUPER-247™ (TO-274AA)
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±30V
Drain to Source Voltage (Vdss): 600 V
Gate Charge (Qg) (Max) @ Vgs: 330 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 7970 pF @ 25 V
Description: POWER MOSFET SUPER-247, 130 M @
Packaging: Tube
Package / Case: TO-274AA
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 40A (Tc)
Rds On (Max) @ Id, Vgs: 130mOhm @ 24A, 10V
Power Dissipation (Max): 570W (Tc)
Vgs(th) (Max) @ Id: 5V @ 250µA
Supplier Device Package: SUPER-247™ (TO-274AA)
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±30V
Drain to Source Voltage (Vdss): 600 V
Gate Charge (Qg) (Max) @ Vgs: 330 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 7970 pF @ 25 V
на замовлення 218 шт:
термін постачання 21-31 дні (днів)Кількість | Ціна без ПДВ |
---|---|
1+ | 456.84 грн |
30+ | 351.34 грн |
120+ | 314.36 грн |
SIHG40N60E-GE3 |
Виробник: Vishay Siliconix
Description: MOSFET N-CH 600V 40A TO247AC
Packaging: Tube
Package / Case: TO-247-3
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 40A (Tc)
Rds On (Max) @ Id, Vgs: 75mOhm @ 20A, 10V
Power Dissipation (Max): 329W (Tc)
Vgs(th) (Max) @ Id: 4V @ 250µA
Supplier Device Package: TO-247AC
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±30V
Drain to Source Voltage (Vdss): 600 V
Gate Charge (Qg) (Max) @ Vgs: 197 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 4436 pF @ 100 V
Description: MOSFET N-CH 600V 40A TO247AC
Packaging: Tube
Package / Case: TO-247-3
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 40A (Tc)
Rds On (Max) @ Id, Vgs: 75mOhm @ 20A, 10V
Power Dissipation (Max): 329W (Tc)
Vgs(th) (Max) @ Id: 4V @ 250µA
Supplier Device Package: TO-247AC
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±30V
Drain to Source Voltage (Vdss): 600 V
Gate Charge (Qg) (Max) @ Vgs: 197 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 4436 pF @ 100 V
на замовлення 809 шт:
термін постачання 21-31 дні (днів)Кількість | Ціна без ПДВ |
---|---|
1+ | 435.46 грн |
25+ | 335.05 грн |
100+ | 299.78 грн |
500+ | 248.23 грн |
SIHH240N60E-T1-GE3 |
Виробник: Vishay Siliconix
Description: MOSFET N-CH 600V 12A PPAK 8 X 8
Packaging: Cut Tape (CT)
Package / Case: 8-PowerTDFN
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 12A (Tc)
Rds On (Max) @ Id, Vgs: 240mOhm @ 5.5A, 10V
Power Dissipation (Max): 89W (Tc)
Vgs(th) (Max) @ Id: 5V @ 250µA
Supplier Device Package: PowerPAK® 8 x 8
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±30V
Drain to Source Voltage (Vdss): 600 V
Gate Charge (Qg) (Max) @ Vgs: 23 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 783 pF @ 100 V
Description: MOSFET N-CH 600V 12A PPAK 8 X 8
Packaging: Cut Tape (CT)
Package / Case: 8-PowerTDFN
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 12A (Tc)
Rds On (Max) @ Id, Vgs: 240mOhm @ 5.5A, 10V
Power Dissipation (Max): 89W (Tc)
Vgs(th) (Max) @ Id: 5V @ 250µA
Supplier Device Package: PowerPAK® 8 x 8
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±30V
Drain to Source Voltage (Vdss): 600 V
Gate Charge (Qg) (Max) @ Vgs: 23 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 783 pF @ 100 V
на замовлення 2786 шт:
термін постачання 21-31 дні (днів)Кількість | Ціна без ПДВ |
---|---|
2+ | 177.46 грн |
10+ | 143.57 грн |
100+ | 116.13 грн |
500+ | 96.88 грн |
1000+ | 82.95 грн |
SIHP240N60E-GE3 |
Виробник: Vishay Siliconix
Description: MOSFET N-CH 600V 12A TO220AB
Packaging: Tube
Package / Case: TO-220-3
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 12A (Tc)
Rds On (Max) @ Id, Vgs: 240mOhm @ 5.5A, 10V
Power Dissipation (Max): 78W (Tc)
Vgs(th) (Max) @ Id: 5V @ 250µA
Supplier Device Package: TO-220AB
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±30V
Drain to Source Voltage (Vdss): 600 V
Gate Charge (Qg) (Max) @ Vgs: 23 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 795 pF @ 100 V
Description: MOSFET N-CH 600V 12A TO220AB
Packaging: Tube
Package / Case: TO-220-3
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 12A (Tc)
Rds On (Max) @ Id, Vgs: 240mOhm @ 5.5A, 10V
Power Dissipation (Max): 78W (Tc)
Vgs(th) (Max) @ Id: 5V @ 250µA
Supplier Device Package: TO-220AB
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±30V
Drain to Source Voltage (Vdss): 600 V
Gate Charge (Qg) (Max) @ Vgs: 23 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 795 pF @ 100 V
на замовлення 159 шт:
термін постачання 21-31 дні (днів)Кількість | Ціна без ПДВ |
---|---|
2+ | 188.15 грн |
50+ | 145.48 грн |
100+ | 119.7 грн |
STB40N60M2 |
Виробник: STMicroelectronics
Description: MOSFET N-CH 600V 34A D2PAK
Packaging: Cut Tape (CT)
Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 34A (Tc)
Rds On (Max) @ Id, Vgs: 88mOhm @ 17A, 10V
Power Dissipation (Max): 250W (Tc)
Vgs(th) (Max) @ Id: 4V @ 250µA
Supplier Device Package: TO-263 (D2Pak)
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±25V
Drain to Source Voltage (Vdss): 600 V
Gate Charge (Qg) (Max) @ Vgs: 57 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 2500 pF @ 100 V
Description: MOSFET N-CH 600V 34A D2PAK
Packaging: Cut Tape (CT)
Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 34A (Tc)
Rds On (Max) @ Id, Vgs: 88mOhm @ 17A, 10V
Power Dissipation (Max): 250W (Tc)
Vgs(th) (Max) @ Id: 4V @ 250µA
Supplier Device Package: TO-263 (D2Pak)
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±25V
Drain to Source Voltage (Vdss): 600 V
Gate Charge (Qg) (Max) @ Vgs: 57 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 2500 pF @ 100 V
на замовлення 2470 шт:
термін постачання 21-31 дні (днів)Кількість | Ціна без ПДВ |
---|---|
1+ | 391.27 грн |
10+ | 316.25 грн |
100+ | 255.85 грн |
500+ | 213.42 грн |
STB40N60M2 |
Виробник: STMicroelectronics
Description: MOSFET N-CH 600V 34A D2PAK
Packaging: Tape & Reel (TR)
Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 34A (Tc)
Rds On (Max) @ Id, Vgs: 88mOhm @ 17A, 10V
Power Dissipation (Max): 250W (Tc)
Vgs(th) (Max) @ Id: 4V @ 250µA
Supplier Device Package: TO-263 (D2Pak)
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±25V
Drain to Source Voltage (Vdss): 600 V
Gate Charge (Qg) (Max) @ Vgs: 57 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 2500 pF @ 100 V
Description: MOSFET N-CH 600V 34A D2PAK
Packaging: Tape & Reel (TR)
Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 34A (Tc)
Rds On (Max) @ Id, Vgs: 88mOhm @ 17A, 10V
Power Dissipation (Max): 250W (Tc)
Vgs(th) (Max) @ Id: 4V @ 250µA
Supplier Device Package: TO-263 (D2Pak)
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±25V
Drain to Source Voltage (Vdss): 600 V
Gate Charge (Qg) (Max) @ Vgs: 57 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 2500 pF @ 100 V
на замовлення 1000 шт:
термін постачання 21-31 дні (днів)Кількість | Ціна без ПДВ |
---|---|
1000+ | 202.21 грн |
STF40N60M2 |
Виробник: STMicroelectronics
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 650V; 34A; Idm: 136A; 40W; TO220FP
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 650V
Drain current: 34A
Pulsed drain current: 136A
Power dissipation: 40W
Case: TO220FP
Gate-source voltage: ±25V
On-state resistance: 88mΩ
Mounting: THT
Gate charge: 57nC
Kind of package: tube
Kind of channel: enhanced
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 650V; 34A; Idm: 136A; 40W; TO220FP
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 650V
Drain current: 34A
Pulsed drain current: 136A
Power dissipation: 40W
Case: TO220FP
Gate-source voltage: ±25V
On-state resistance: 88mΩ
Mounting: THT
Gate charge: 57nC
Kind of package: tube
Kind of channel: enhanced
на замовлення 46 шт:
термін постачання 21-30 дні (днів)Кількість | Ціна без ПДВ |
---|---|
1+ | 422.02 грн |
3+ | 269.72 грн |
9+ | 255.3 грн |
STF40N60M2 |
Виробник: STMicroelectronics
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 650V; 34A; Idm: 136A; 40W; TO220FP
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 650V
Drain current: 34A
Pulsed drain current: 136A
Power dissipation: 40W
Case: TO220FP
Gate-source voltage: ±25V
On-state resistance: 88mΩ
Mounting: THT
Gate charge: 57nC
Kind of package: tube
Kind of channel: enhanced
кількість в упаковці: 1 шт
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 650V; 34A; Idm: 136A; 40W; TO220FP
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 650V
Drain current: 34A
Pulsed drain current: 136A
Power dissipation: 40W
Case: TO220FP
Gate-source voltage: ±25V
On-state resistance: 88mΩ
Mounting: THT
Gate charge: 57nC
Kind of package: tube
Kind of channel: enhanced
кількість в упаковці: 1 шт
на замовлення 46 шт:
термін постачання 7-14 дні (днів)Кількість | Ціна без ПДВ |
---|---|
1+ | 506.43 грн |
3+ | 336.11 грн |
9+ | 306.37 грн |
STF40N60M2 |
Виробник: STMicroelectronics
Description: MOSFET N-CH 600V 34A TO220FP
Packaging: Tube
Package / Case: TO-220-3 Full Pack
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 34A (Tc)
Rds On (Max) @ Id, Vgs: 88mOhm @ 17A, 10V
Power Dissipation (Max): 40W (Tc)
Vgs(th) (Max) @ Id: 4V @ 250µA
Supplier Device Package: TO-220FP
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±25V
Drain to Source Voltage (Vdss): 600 V
Gate Charge (Qg) (Max) @ Vgs: 57 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 2500 pF @ 100 V
Description: MOSFET N-CH 600V 34A TO220FP
Packaging: Tube
Package / Case: TO-220-3 Full Pack
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 34A (Tc)
Rds On (Max) @ Id, Vgs: 88mOhm @ 17A, 10V
Power Dissipation (Max): 40W (Tc)
Vgs(th) (Max) @ Id: 4V @ 250µA
Supplier Device Package: TO-220FP
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±25V
Drain to Source Voltage (Vdss): 600 V
Gate Charge (Qg) (Max) @ Vgs: 57 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 2500 pF @ 100 V
на замовлення 1089 шт:
термін постачання 21-31 дні (днів)Кількість | Ціна без ПДВ |
---|---|
1+ | 382.72 грн |
50+ | 292.37 грн |
100+ | 250.6 грн |
500+ | 209.05 грн |
1000+ | 179 грн |
STP40N60M2 |
Виробник: STMicroelectronics
Description: MOSFET N-CH 600V 34A TO220
Packaging: Tube
Package / Case: TO-220-3
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 34A (Tc)
Rds On (Max) @ Id, Vgs: 88mOhm @ 17A, 10V
Power Dissipation (Max): 250W (Tc)
Vgs(th) (Max) @ Id: 4V @ 250µA
Supplier Device Package: TO-220
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±25V
Drain to Source Voltage (Vdss): 600 V
Gate Charge (Qg) (Max) @ Vgs: 57 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 2500 pF @ 100 V
Description: MOSFET N-CH 600V 34A TO220
Packaging: Tube
Package / Case: TO-220-3
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 34A (Tc)
Rds On (Max) @ Id, Vgs: 88mOhm @ 17A, 10V
Power Dissipation (Max): 250W (Tc)
Vgs(th) (Max) @ Id: 4V @ 250µA
Supplier Device Package: TO-220
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±25V
Drain to Source Voltage (Vdss): 600 V
Gate Charge (Qg) (Max) @ Vgs: 57 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 2500 pF @ 100 V
на замовлення 1000 шт:
термін постачання 21-31 дні (днів)Кількість | Ціна без ПДВ |
---|---|
1+ | 352.07 грн |
50+ | 268.82 грн |
100+ | 230.43 грн |
500+ | 192.22 грн |
1000+ | 164.59 грн |
STW40N60M2 |
Виробник: STMicroelectronics
Trans MOSFET N-CH 600V 34A 3-Pin(3+Tab) TO-247 Tube
Trans MOSFET N-CH 600V 34A 3-Pin(3+Tab) TO-247 Tube
на замовлення 204 шт:
термін постачання 21-31 дні (днів)Кількість | Ціна без ПДВ |
---|---|
2+ | 287.48 грн |
STW40N60M2 |
Виробник: STMicroelectronics
Description: MOSFET N-CH 600V 34A TO247
Packaging: Tube
Package / Case: TO-247-3
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 34A (Tc)
Rds On (Max) @ Id, Vgs: 88mOhm @ 17A, 10V
Power Dissipation (Max): 250W (Tc)
Vgs(th) (Max) @ Id: 4V @ 250µA
Supplier Device Package: TO-247-3
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±25V
Drain to Source Voltage (Vdss): 600 V
Gate Charge (Qg) (Max) @ Vgs: 57 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 2500 pF @ 100 V
Description: MOSFET N-CH 600V 34A TO247
Packaging: Tube
Package / Case: TO-247-3
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 34A (Tc)
Rds On (Max) @ Id, Vgs: 88mOhm @ 17A, 10V
Power Dissipation (Max): 250W (Tc)
Vgs(th) (Max) @ Id: 4V @ 250µA
Supplier Device Package: TO-247-3
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±25V
Drain to Source Voltage (Vdss): 600 V
Gate Charge (Qg) (Max) @ Vgs: 57 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 2500 pF @ 100 V
на замовлення 586 шт:
термін постачання 21-31 дні (днів)Кількість | Ціна без ПДВ |
---|---|
1+ | 512.43 грн |
30+ | 394.03 грн |
120+ | 352.56 грн |
510+ | 291.94 грн |
STWA40N60M2 |
Виробник: STMicroelectronics
Description: MOSFET N-CHANNEL 600V 34A TO247
Packaging: Tube
Package / Case: TO-247-3
Mounting Type: Through Hole
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 34A (Tc)
Supplier Device Package: TO-247 Long Leads
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±25V
Drain to Source Voltage (Vdss): 600 V
Description: MOSFET N-CHANNEL 600V 34A TO247
Packaging: Tube
Package / Case: TO-247-3
Mounting Type: Through Hole
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 34A (Tc)
Supplier Device Package: TO-247 Long Leads
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±25V
Drain to Source Voltage (Vdss): 600 V
на замовлення 600 шт:
термін постачання 21-31 дні (днів)Кількість | Ціна без ПДВ |
---|---|
1+ | 416.22 грн |
10+ | 336.29 грн |
100+ | 272 грн |
600+ | 226.9 грн |
Транзистор IGBT FGH40N60SFD 40A 600V TO-247 |
на замовлення 5 шт:
термін постачання 3 дні (днів)Кількість | Ціна без ПДВ |
---|---|
1+ | 192.3 грн |
Транзистор IGBT FGH40N60SMD 40A 600V TO-247 |
на замовлення 12 шт:
термін постачання 3 дні (днів)Кількість | Ціна без ПДВ |
---|---|
2+ | 151.14 грн |
Транзистор IGBT FGH40N60UFD 40A 600V TO-247 |
на замовлення 26 шт:
термін постачання 3 дні (днів)Кількість | Ціна без ПДВ |
---|---|
1+ | 206.45 грн |
Транзистор IGBT IHW40N60RF(H40RF60) 80A 600V TO-247 |
на замовлення 4 шт:
термін постачання 3 дні (днів)Кількість | Ціна без ПДВ |
---|---|
2+ | 154.35 грн |
Транзистор IGBT SGT40N60NPFDP 40A 600V TO-3P |
на замовлення 24 шт:
термін постачання 3 дні (днів)Кількість | Ціна без ПДВ |
---|---|
3+ | 69.46 грн |
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