Продукція > B2D
| Назва | Виробник | Інформація | Доступність | Ціна | ||||||||
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| B2D-211213 | OTTO | Basic / Snap Action Switches REDUCED DEAD BREAK, .2 WIDE,BTN,SGL SLDR | товару немає в наявності | В кошику од. на суму грн. | ||||||||
| B2D-212211 | OTTO | Basic / Snap Action Switches Sub-Subminiature Basic Switch | товару немає в наявності | В кошику од. на суму грн. | ||||||||
| B2D-213213 | OTTO | Basic / Snap Action Switches B2, LOW DEADBREAK, .2 WIDE,BTN, QC TERM | товару немає в наявності | В кошику од. на суму грн. | ||||||||
| B2D04065E1 | BASiC SEMICONDUCTOR | Category: SMD Schottky diodes Description: Diode: Schottky rectifying; TO252-2; SiC; SMD; 650V; 4A; reel,tape Type of diode: Schottky rectifying Technology: SiC Mounting: SMD Max. off-state voltage: 650V Load current: 4A Semiconductor structure: single diode Case: TO252-2 Max. forward voltage: 1.6V Max. forward impulse current: 31A Leakage current: 20µA Kind of package: reel; tape Power dissipation: 39W | на замовлення 2451 шт: термін постачання 14-30 дні (днів) |
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| B2D04065K1 | BASiC SEMICONDUCTOR | Category: THT Schottky diodes Description: Diode: Schottky rectifying; SiC; THT; 650V; 4A; TO220-2; Ufmax: 1.6V Type of diode: Schottky rectifying Technology: SiC Mounting: THT Max. off-state voltage: 650V Load current: 4A Semiconductor structure: single diode Case: TO220-2 Max. forward voltage: 1.6V Max. forward impulse current: 34A Leakage current: 20µA Kind of package: tube Power dissipation: 39W | на замовлення 27 шт: термін постачання 14-30 дні (днів) |
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| B2D06065E1 | BASiC SEMICONDUCTOR | Category: SMD Schottky diodes Description: Diode: Schottky rectifying; TO252-2; SiC; SMD; 650V; 6A; reel,tape Mounting: SMD Case: TO252-2 Type of diode: Schottky rectifying Technology: SiC Semiconductor structure: single diode Leakage current: 20µA Max. forward voltage: 1.7V Load current: 6A Power dissipation: 50W Max. forward impulse current: 38A Max. off-state voltage: 650V Kind of package: reel; tape | на замовлення 2434 шт: термін постачання 14-30 дні (днів) |
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| B2D08065K | BASiC SEMICONDUCTOR | Category: THT Schottky diodes Description: Diode: Schottky rectifying; SiC; THT; 650V; 8A; TO220-2; Ufmax: 1.7V Type of diode: Schottky rectifying Technology: SiC Mounting: THT Max. off-state voltage: 650V Load current: 8A Semiconductor structure: single diode Case: TO220-2 Max. forward voltage: 1.7V Max. forward impulse current: 60A Leakage current: 10µA Kind of package: tube Power dissipation: 57W | на замовлення 3 шт: термін постачання 14-30 дні (днів) |
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| B2D08065K1 | BASiC SEMICONDUCTOR | Category: THT Schottky diodes Description: Diode: Schottky rectifying; SiC; THT; 650V; 8A; TO220-2; Ufmax: 1V Type of diode: Schottky rectifying Technology: SiC Mounting: THT Max. off-state voltage: 650V Load current: 8A Semiconductor structure: single diode Case: TO220-2 Max. forward voltage: 1V Max. forward impulse current: 56A Leakage current: 11µA Kind of package: tube Power dissipation: 64W | на замовлення 79 шт: термін постачання 14-30 дні (днів) |
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| B2D08065KS | BASiC SEMICONDUCTOR | Category: THT Schottky diodes Description: Diode: Schottky rectifying; SiC; THT; 650V; 8A; TO220ISO; Ir: 10uA Type of diode: Schottky rectifying Technology: SiC Mounting: THT Max. off-state voltage: 650V Load current: 8A Semiconductor structure: single diode Case: TO220ISO Max. forward voltage: 1.54V Max. forward impulse current: 64A Leakage current: 10µA Kind of package: tube Power dissipation: 37W | на замовлення 41 шт: термін постачання 14-30 дні (днів) |
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| B2D10065KS | BASiC SEMICONDUCTOR | Category: THT Schottky diodes Description: Diode: Schottky rectifying; SiC; THT; 650V; 10A; TO220ISO; Ir: 10uA Type of diode: Schottky rectifying Technology: SiC Mounting: THT Max. off-state voltage: 650V Load current: 10A Semiconductor structure: single diode Case: TO220ISO Max. forward voltage: 1.7V Max. forward impulse current: 85A Leakage current: 10µA Power dissipation: 47W Kind of package: tube | на замовлення 60 шт: термін постачання 14-30 дні (днів) |
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| B2D10120E1 | BASiC SEMICONDUCTOR | Category: SMD Schottky diodes Description: Diode: Schottky rectifying; TO252-2; SiC; SMD; 1.2kV; 10A; 72W Type of diode: Schottky rectifying Case: TO252-2 Technology: SiC Mounting: SMD Max. off-state voltage: 1.2kV Load current: 10A Semiconductor structure: single diode Max. forward voltage: 1.95V Leakage current: 16µA Max. forward impulse current: 95A Kind of package: reel; tape Power dissipation: 72W | товару немає в наявності | В кошику од. на суму грн. | ||||||||
| B2D10120H1 | BASiC SEMICONDUCTOR | Category: THT Schottky diodes Description: Diode: Schottky rectifying; SiC; THT; 1.2kV; 10A; TO247-2; Ufmax: 2V Type of diode: Schottky rectifying Technology: SiC Mounting: THT Max. off-state voltage: 1.2kV Load current: 10A Semiconductor structure: single diode Case: TO247-2 Max. forward voltage: 2V Max. forward impulse current: 90A Leakage current: 30µA Power dissipation: 62W Kind of package: tube | на замовлення 20 шт: термін постачання 14-30 дні (днів) |
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| B2D16065HC1 | BASiC SEMICONDUCTOR | Category: THT Schottky diodes Description: Diode: Schottky rectifying; SiC; THT; 650V; 8Ax2; TO247-3; Ir: 11uA Mounting: THT Semiconductor structure: common cathode; double Type of diode: Schottky rectifying Technology: SiC Leakage current: 11µA Max. forward voltage: 1.73V Load current: 8A x2 Max. load current: 16A Max. off-state voltage: 650V Case: TO247-3 Kind of package: tube | на замовлення 30 шт: термін постачання 14-30 дні (днів) |
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| B2D20065F1 | BASiC SEMICONDUCTOR | Category: SMD Schottky diodes Description: Diode: Schottky rectifying; TO263-2; SiC; SMD; 650V; 20A; reel,tape Mounting: SMD Semiconductor structure: single diode Technology: SiC Type of diode: Schottky rectifying Leakage current: 13µA Load current: 20A Power dissipation: 100W Max. forward impulse current: 140A Max. forward voltage: 1.67V Max. off-state voltage: 650V Kind of package: reel; tape Case: TO263-2 | на замовлення 520 шт: термін постачання 14-30 дні (днів) |
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| B2D20065H1 | BASiC SEMICONDUCTOR | Category: THT Schottky diodes Description: Diode: Schottky rectifying; SiC; THT; 650V; 20A; TO247-2; Ir: 15uA Mounting: THT Semiconductor structure: single diode Technology: SiC Type of diode: Schottky rectifying Leakage current: 15µA Load current: 20A Power dissipation: 130W Max. forward impulse current: 146A Max. forward voltage: 1.7V Max. off-state voltage: 650V Kind of package: tube Case: TO247-2 | на замовлення 19 шт: термін постачання 14-30 дні (днів) |
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| B2D20065HC1 | BASiC SEMICONDUCTOR | Category: THT Schottky diodes Description: Diode: Schottky rectifying; SiC; THT; 650V; 10Ax2; TO247-3; Ir: 30uA Mounting: THT Semiconductor structure: common cathode; double Technology: SiC Type of diode: Schottky rectifying Leakage current: 30µA Load current: 10A x2 Power dissipation: 74W Max. forward impulse current: 70A Max. forward voltage: 1.75V Max. load current: 20A Max. off-state voltage: 650V Kind of package: tube Case: TO247-3 | на замовлення 23 шт: термін постачання 14-30 дні (днів) |
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| B2D20065TF | BASiC SEMICONDUCTOR | Category: THT Schottky diodes Description: Diode: Schottky rectifying; SiC; THT; 650V; 10Ax2; TO3PF; Ir: 20uA Mounting: THT Semiconductor structure: common cathode; double Technology: SiC Type of diode: Schottky rectifying Leakage current: 20µA Load current: 10A x2 Power dissipation: 33W Max. forward impulse current: 70A Max. forward voltage: 1.62V Max. load current: 20A Max. off-state voltage: 650V Kind of package: tube Case: TO3PF | на замовлення 30 шт: термін постачання 14-30 дні (днів) |
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| B2D20120F1 | BASiC SEMICONDUCTOR | Category: SMD Schottky diodes Description: Diode: Schottky rectifying; TO263-2; SiC; SMD; 1.2kV; 20A; 122W Type of diode: Schottky rectifying Technology: SiC Mounting: SMD Max. off-state voltage: 1.2kV Load current: 20A Semiconductor structure: single diode Case: TO263-2 Max. forward voltage: 1.8V Max. forward impulse current: 180A Kind of package: reel; tape Leakage current: 33µA Power dissipation: 122W | товару немає в наявності | В кошику од. на суму грн. | ||||||||
| B2D20120H1 | BASiC SEMICONDUCTOR | Category: THT Schottky diodes Description: Diode: Schottky rectifying; SiC; THT; 1.2kV; 20A; TO247-2; Ir: 40uA Type of diode: Schottky rectifying Technology: SiC Mounting: THT Max. off-state voltage: 1.2kV Load current: 20A Semiconductor structure: single diode Case: TO247-2 Max. forward voltage: 1.78V Max. forward impulse current: 190A Kind of package: tube Leakage current: 40µA Power dissipation: 159W | на замовлення 29 шт: термін постачання 14-30 дні (днів) |
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| B2D20120HC1 | BASiC SEMICONDUCTOR | Category: THT Schottky diodes Description: Diode: Schottky rectifying; SiC; THT; 1.2kV; 10Ax2; TO247-3; 60W Type of diode: Schottky rectifying Technology: SiC Mounting: THT Max. off-state voltage: 1.2kV Load current: 10A x2 Semiconductor structure: common cathode; double Case: TO247-3 Max. forward voltage: 2V Max. load current: 20A Max. forward impulse current: 90A Kind of package: tube Leakage current: 40µA Power dissipation: 60W | на замовлення 41 шт: термін постачання 14-30 дні (днів) |
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| B2D60120H1 | BASiC SEMICONDUCTOR | Category: THT Schottky diodes Description: Diode: Schottky rectifying; SiC; THT; 1.2kV; 60A; TO247-2; Ir: 70uA Type of diode: Schottky rectifying Mounting: THT Max. off-state voltage: 1.2kV Load current: 60A Semiconductor structure: single diode Case: TO247-2 Max. forward voltage: 2.1V Max. forward impulse current: 340A Kind of package: tube Technology: SiC Leakage current: 70µA Power dissipation: 361W | на замовлення 11 шт: термін постачання 14-30 дні (днів) |
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| B2DM100120N1 | BASiC SEMICONDUCTOR | Category: Diode modules Description: Module: diode; double independent; 1.2kV; If: 100Ax2; SOT227; screw Max. off-state voltage: 1.2kV Load current: 100A x2 Max. load current: 200A Max. forward impulse current: 540A Kind of package: tube Type of semiconductor module: diode Semiconductor structure: double independent Case: SOT227 Technology: SiC Features of semiconductor devices: Schottky Mechanical mounting: screw Electrical mounting: screw | товару немає в наявності | В кошику од. на суму грн. |