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NM93C46EM8 NM93C46EM8 onsemi NM93C46.pdf Description: IC EEPROM 1KBIT MICROWIRE 8SOIC
Packaging: Tube
Package / Case: 8-SOIC (0.154", 3.90mm Width)
Mounting Type: Surface Mount
Memory Size: 1Kbit
Memory Type: Non-Volatile
Operating Temperature: -40°C ~ 85°C (TA)
Voltage - Supply: 4.5V ~ 5.5V
Technology: EEPROM
Clock Frequency: 1 MHz
Memory Format: EEPROM
Supplier Device Package: 8-SOIC
Write Cycle Time - Word, Page: 10ms
Memory Interface: Microwire
Memory Organization: 64 x 16
DigiKey Programmable: Not Verified
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NM93C46LZM8 NM93C46LZM8 onsemi NM93C46.pdf Description: IC EEPROM 1KBIT MICROWIRE 8SOIC
Packaging: Tube
Package / Case: 8-SOIC (0.154", 3.90mm Width)
Mounting Type: Surface Mount
Memory Size: 1Kbit
Memory Type: Non-Volatile
Operating Temperature: 0°C ~ 70°C (TA)
Voltage - Supply: 2.7V ~ 5.5V
Technology: EEPROM
Clock Frequency: 250 kHz
Memory Format: EEPROM
Supplier Device Package: 8-SOIC
Write Cycle Time - Word, Page: 15ms
Memory Interface: Microwire
Memory Organization: 64 x 16
DigiKey Programmable: Not Verified
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NM93C46LZN NM93C46LZN onsemi NM93C46.pdf Description: IC EEPROM 1KBIT MICROWIRE 8DIP
Packaging: Tube
Package / Case: 8-DIP (0.300", 7.62mm)
Mounting Type: Through Hole
Memory Size: 1Kbit
Memory Type: Non-Volatile
Operating Temperature: 0°C ~ 70°C (TA)
Voltage - Supply: 2.7V ~ 5.5V
Technology: EEPROM
Clock Frequency: 250 kHz
Memory Format: EEPROM
Supplier Device Package: 8-DIP
Write Cycle Time - Word, Page: 15ms
Memory Interface: Microwire
Memory Organization: 64 x 16
DigiKey Programmable: Not Verified
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NM93C56EN NM93C56EN onsemi NM93C56.pdf Description: IC EEPROM 2KBIT MICROWIRE 8DIP
Packaging: Tube
Package / Case: 8-DIP (0.300", 7.62mm)
Mounting Type: Through Hole
Memory Size: 2Kbit
Memory Type: Non-Volatile
Operating Temperature: -40°C ~ 85°C (TA)
Voltage - Supply: 4.5V ~ 5.5V
Technology: EEPROM
Clock Frequency: 1 MHz
Memory Format: EEPROM
Supplier Device Package: 8-DIP
Part Status: Obsolete
Write Cycle Time - Word, Page: 10ms
Memory Interface: Microwire
Memory Organization: 128 x 16
DigiKey Programmable: Not Verified
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NM93C56LN NM93C56LN onsemi NM93C56.pdf Description: IC EEPROM 2KBIT MICROWIRE 8DIP
Packaging: Tube
Package / Case: 8-DIP (0.300", 7.62mm)
Mounting Type: Through Hole
Memory Size: 2Kbit
Memory Type: Non-Volatile
Operating Temperature: 0°C ~ 70°C (TA)
Voltage - Supply: 2.7V ~ 5.5V
Technology: EEPROM
Clock Frequency: 250 kHz
Memory Format: EEPROM
Supplier Device Package: 8-DIP
Write Cycle Time - Word, Page: 15ms
Memory Interface: Microwire
Memory Organization: 128 x 16
DigiKey Programmable: Not Verified
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NM93C56LZM8 NM93C56LZM8 onsemi NM93C56.pdf Description: IC EEPROM 2KBIT MICROWIRE 8SOIC
Packaging: Tube
Package / Case: 8-SOIC (0.154", 3.90mm Width)
Mounting Type: Surface Mount
Memory Size: 2Kbit
Memory Type: Non-Volatile
Operating Temperature: 0°C ~ 70°C (TA)
Voltage - Supply: 2.7V ~ 5.5V
Technology: EEPROM
Clock Frequency: 250 kHz
Memory Format: EEPROM
Supplier Device Package: 8-SOIC
Write Cycle Time - Word, Page: 15ms
Memory Interface: Microwire
Memory Organization: 128 x 16
DigiKey Programmable: Not Verified
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NM93C56LZN NM93C56LZN onsemi NM93C56.pdf Description: IC EEPROM 2KBIT MICROWIRE 8DIP
Packaging: Tube
Package / Case: 8-DIP (0.300", 7.62mm)
Mounting Type: Through Hole
Memory Size: 2Kbit
Memory Type: Non-Volatile
Operating Temperature: 0°C ~ 70°C (TA)
Voltage - Supply: 2.7V ~ 5.5V
Technology: EEPROM
Clock Frequency: 250 kHz
Memory Format: EEPROM
Supplier Device Package: 8-DIP
Write Cycle Time - Word, Page: 15ms
Memory Interface: Microwire
Memory Organization: 128 x 16
DigiKey Programmable: Not Verified
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NM93C56M8 NM93C56M8 onsemi NM93C56.pdf Description: IC EEPROM 2KBIT MICROWIRE 8SOIC
Packaging: Tube
Package / Case: 8-SOIC (0.154", 3.90mm Width)
Mounting Type: Surface Mount
Memory Size: 2Kbit
Memory Type: Non-Volatile
Operating Temperature: 0°C ~ 70°C (TA)
Voltage - Supply: 4.5V ~ 5.5V
Technology: EEPROM
Clock Frequency: 1 MHz
Memory Format: EEPROM
Supplier Device Package: 8-SOIC
Write Cycle Time - Word, Page: 10ms
Memory Interface: Microwire
Memory Organization: 128 x 16
DigiKey Programmable: Not Verified
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NM93C66EM8 NM93C66EM8 onsemi NM93C66.pdf Description: IC EEPROM 4KBIT MICROWIRE 8SOIC
Packaging: Tube
Package / Case: 8-SOIC (0.154", 3.90mm Width)
Mounting Type: Surface Mount
Memory Size: 4Kbit
Memory Type: Non-Volatile
Operating Temperature: -40°C ~ 85°C (TA)
Voltage - Supply: 4.5V ~ 5.5V
Technology: EEPROM
Clock Frequency: 1 MHz
Memory Format: EEPROM
Supplier Device Package: 8-SOIC
Part Status: Obsolete
Write Cycle Time - Word, Page: 10ms
Memory Interface: Microwire
Memory Organization: 256 x 16
DigiKey Programmable: Not Verified
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NM93C66EN NM93C66EN onsemi NM93C66.pdf Description: IC EEPROM 4KBIT MICROWIRE 8DIP
Packaging: Tube
Package / Case: 8-DIP (0.300", 7.62mm)
Mounting Type: Through Hole
Memory Size: 4Kbit
Memory Type: Non-Volatile
Operating Temperature: -40°C ~ 85°C (TA)
Voltage - Supply: 4.5V ~ 5.5V
Technology: EEPROM
Clock Frequency: 1 MHz
Memory Format: EEPROM
Supplier Device Package: 8-DIP
Part Status: Obsolete
Write Cycle Time - Word, Page: 10ms
Memory Interface: Microwire
Memory Organization: 256 x 16
DigiKey Programmable: Not Verified
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NM93C66LN NM93C66LN onsemi NM93C66.pdf Description: IC EEPROM 4KBIT MICROWIRE 8DIP
Packaging: Tube
Package / Case: 8-DIP (0.300", 7.62mm)
Mounting Type: Through Hole
Memory Size: 4Kbit
Memory Type: Non-Volatile
Operating Temperature: 0°C ~ 70°C (TA)
Voltage - Supply: 2.7V ~ 5.5V
Technology: EEPROM
Clock Frequency: 250 kHz
Memory Format: EEPROM
Supplier Device Package: 8-DIP
Part Status: Obsolete
Write Cycle Time - Word, Page: 15ms
Memory Interface: Microwire
Memory Organization: 256 x 16
DigiKey Programmable: Not Verified
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NM93C66M8 NM93C66M8 onsemi NM93C66.pdf Description: IC EEPROM 4KBIT MICROWIRE 8SOIC
Packaging: Tube
Package / Case: 8-SOIC (0.154", 3.90mm Width)
Mounting Type: Surface Mount
Memory Size: 4Kbit
Memory Type: Non-Volatile
Operating Temperature: 0°C ~ 70°C (TA)
Voltage - Supply: 4.5V ~ 5.5V
Technology: EEPROM
Clock Frequency: 1 MHz
Memory Format: EEPROM
Supplier Device Package: 8-SOIC
Part Status: Obsolete
Write Cycle Time - Word, Page: 10ms
Memory Interface: Microwire
Memory Organization: 256 x 16
DigiKey Programmable: Not Verified
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NM93C66M NM93C66M onsemi Description: IC EEPROM 4KBIT SPI 1MHZ 14SOIC
Packaging: Tube
Package / Case: 14-SOIC (0.154", 3.90mm Width)
Mounting Type: Surface Mount
Memory Size: 4Kbit
Memory Type: Non-Volatile
Operating Temperature: 0°C ~ 70°C (TA)
Voltage - Supply: 4.5V ~ 5.5V
Technology: EEPROM
Clock Frequency: 1 MHz
Memory Format: EEPROM
Supplier Device Package: 14-SOIC
Part Status: Obsolete
Write Cycle Time - Word, Page: 10ms
Memory Interface: Microwire
Memory Organization: 256 x 16
DigiKey Programmable: Not Verified
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NM93C86AM8 NM93C86AM8 onsemi NM93C86A.pdf Description: IC EEPROM 16KBIT MICROWIRE 8SOIC
Packaging: Tube
Package / Case: 8-SOIC (0.154", 3.90mm Width)
Mounting Type: Surface Mount
Memory Size: 16Kbit
Memory Type: Non-Volatile
Operating Temperature: 0°C ~ 70°C (TA)
Voltage - Supply: 4.5V ~ 5.5V
Technology: EEPROM
Clock Frequency: 1 MHz
Memory Format: EEPROM
Supplier Device Package: 8-SOIC
Write Cycle Time - Word, Page: 10ms
Memory Interface: Microwire
Memory Organization: 2K x 8, 1K x 16
DigiKey Programmable: Not Verified
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NM93C86AN NM93C86AN onsemi NM93C86A.pdf Description: IC EEPROM 16KBIT MICROWIRE 8DIP
Packaging: Tube
Package / Case: 8-DIP (0.300", 7.62mm)
Mounting Type: Through Hole
Memory Size: 16Kbit
Memory Type: Non-Volatile
Operating Temperature: 0°C ~ 70°C (TA)
Voltage - Supply: 4.5V ~ 5.5V
Technology: EEPROM
Clock Frequency: 1 MHz
Memory Format: EEPROM
Supplier Device Package: 8-DIP
Part Status: Obsolete
Write Cycle Time - Word, Page: 10ms
Memory Interface: Microwire
Memory Organization: 2K x 8, 1K x 16
DigiKey Programmable: Not Verified
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NM93CS46M8 NM93CS46M8 onsemi NM93CS46.pdf Description: IC EEPROM 1KBIT MICROWIRE 8SOIC
Packaging: Tube
Package / Case: 8-SOIC (0.154", 3.90mm Width)
Mounting Type: Surface Mount
Memory Size: 1Kbit
Memory Type: Non-Volatile
Operating Temperature: 0°C ~ 70°C (TA)
Voltage - Supply: 4.5V ~ 5.5V
Technology: EEPROM
Clock Frequency: 1 MHz
Memory Format: EEPROM
Supplier Device Package: 8-SOIC
Write Cycle Time - Word, Page: 10ms
Memory Interface: Microwire
Memory Organization: 64 x 16
DigiKey Programmable: Not Verified
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NMC27C64N150 NMC27C64N150 onsemi NMC27C64.pdf Description: IC EPROM 64KBIT PARALLEL 28DIP
Packaging: Tube
Package / Case: 28-DIP (0.600", 15.24mm)
Mounting Type: Through Hole
Memory Size: 64Kbit
Memory Type: Non-Volatile
Operating Temperature: 0°C ~ 70°C (TA)
Voltage - Supply: 4.5V ~ 5.5V
Technology: EPROM - OTP
Memory Format: EPROM
Supplier Device Package: 28-PDIP
Part Status: Obsolete
Memory Interface: Parallel
Access Time: 150 ns
Memory Organization: 8K x 8
DigiKey Programmable: Not Verified
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74ABT245CSC 74ABT245CSC onsemi 74ABT245.pdf Description: IC TXRX NON-INVERT 5.5V 20SOIC
Package / Case: 20-SOIC (0.295", 7.50mm Width)
Output Type: 3-State
Mounting Type: Surface Mount
Number of Elements: 1
Logic Type: Transceiver, Non-Inverting
Operating Temperature: -40°C ~ 85°C (TA)
Voltage - Supply: 4.5V ~ 5.5V
Number of Bits per Element: 8
Current - Output High, Low: 32mA, 64mA
Supplier Device Package: 20-SOIC
Part Status: Obsolete
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74F157ASC 74F157ASC onsemi 74F157A.pdf Description: IC MULTIPLEXER 4 X 2:1 16SOIC
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74F245SCX 74F245SCX onsemi 74F245%2CRev.Jan08.pdf Description: IC TXRX NON-INVERT 5.5V 20SOIC
Packaging: Tape & Reel (TR)
Package / Case: 20-SOIC (0.295", 7.50mm Width)
Output Type: 3-State
Mounting Type: Surface Mount
Number of Elements: 1
Logic Type: Transceiver, Non-Inverting
Operating Temperature: 0°C ~ 70°C (TA)
Voltage - Supply: 4.5V ~ 5.5V
Number of Bits per Element: 8
Current - Output High, Low: 3mA, 24mA; 15mA, 64mA
Supplier Device Package: 20-SOIC
Part Status: Obsolete
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74F257ASC 74F257ASC onsemi DS_261_74F257A.pdf Description: IC MULTIPLEXER 4 X 2:1 16SOIC
Packaging: Tube
Package / Case: 16-SOIC (0.154", 3.90mm Width)
Mounting Type: Surface Mount
Circuit: 4 x 2:1
Type: Multiplexer
Operating Temperature: 0°C ~ 70°C
Voltage - Supply: 4.5V ~ 5.5V
Independent Circuits: 1
Current - Output High, Low: 3mA, 24mA
Voltage Supply Source: Single Supply
Supplier Device Package: 16-SOIC
Part Status: Obsolete
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74F30PC 74F30PC onsemi DS_261_74F30.pdf Description: IC GATE NAND 1CH 8-INP 14DIP
Packaging: Tube
Package / Case: 14-DIP (0.300", 7.62mm)
Mounting Type: Through Hole
Logic Type: NAND Gate
Operating Temperature: 0°C ~ 70°C
Voltage - Supply: 4.5V ~ 5.5V
Current - Output High, Low: 1mA, 20mA
Number of Inputs: 8
Supplier Device Package: 14-MDIP
Input Logic Level - High: 2V
Input Logic Level - Low: 0.8V
Max Propagation Delay @ V, Max CL: 5ns @ 5V, 50pF
Number of Circuits: 1
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74VHC4046N 74VHC4046N onsemi 74VHC4046.pdf Description: IC PHASE LOCK LOOP 16DIP
Packaging: Tube
Package / Case: 16-DIP (0.300", 7.62mm)
Mounting Type: Through Hole
Output: 3-State
Frequency - Max: 14MHz
Type: Phase Lock Loop (PLL)
Input: CMOS
Operating Temperature: -40°C ~ 85°C
Voltage - Supply: 2V ~ 6V
Ratio - Input:Output: 1:2
Differential - Input:Output: No/No
Supplier Device Package: 16-PDIP
PLL: No
Divider/Multiplier: No/No
Part Status: Obsolete
Number of Circuits: 1
DigiKey Programmable: Not Verified
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DM74ALS11AM DM74ALS11AM onsemi DM74ALS11A.pdf Description: IC GATE AND 3CH 3-INP 14SOIC
Packaging: Tube
Package / Case: 14-SOIC (0.154", 3.90mm Width)
Mounting Type: Surface Mount
Logic Type: AND Gate
Operating Temperature: 0°C ~ 70°C
Voltage - Supply: 4.5V ~ 5.5V
Current - Output High, Low: 400µA, 8mA
Number of Inputs: 3
Supplier Device Package: 14-SOIC
Input Logic Level - High: 2V
Input Logic Level - Low: 0.8V
Max Propagation Delay @ V, Max CL: 13ns @ 5V, 50pF
Number of Circuits: 3
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NM93C46M8X NM93C46M8X onsemi NM93C46.pdf Description: IC EEPROM 1KBIT MICROWIRE 8SOIC
Packaging: Tape & Reel (TR)
Package / Case: 8-SOIC (0.154", 3.90mm Width)
Mounting Type: Surface Mount
Memory Size: 1Kbit
Memory Type: Non-Volatile
Operating Temperature: 0°C ~ 70°C (TA)
Voltage - Supply: 4.5V ~ 5.5V
Technology: EEPROM
Clock Frequency: 1 MHz
Memory Format: EEPROM
Supplier Device Package: 8-SOIC
Write Cycle Time - Word, Page: 10ms
Memory Interface: Microwire
Memory Organization: 64 x 16
DigiKey Programmable: Not Verified
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CD40106BCN CD40106BCN onsemi CD40106BC.pdf Description: IC INVERT SCHMITT 6CH 1IN 14MDIP
Packaging: Tube
Features: Schmitt Trigger
Package / Case: 14-DIP (0.300", 7.62mm)
Mounting Type: Through Hole
Logic Type: Inverter
Operating Temperature: -55°C ~ 125°C
Voltage - Supply: 3V ~ 15V
Current - Output High, Low: 3.4mA, 3.4mA
Number of Inputs: 1
Supplier Device Package: 14-MDIP
Input Logic Level - High: 4.3V ~ 12.9V
Input Logic Level - Low: 0.7V ~ 2.1V
Max Propagation Delay @ V, Max CL: 160ns @ 15V, 50pF
Part Status: Obsolete
Number of Circuits: 6
Current - Quiescent (Max): 4 µA
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74LVX244M 74LVX244M onsemi ONSM-S-A0003585048-1.pdf?t.download=true&u=5oefqw Description: IC BUF NON-INVERT 3.6V 20SOIC
Packaging: Tube
Package / Case: 20-SOIC (0.295", 7.50mm Width)
Output Type: 3-State
Mounting Type: Surface Mount
Number of Elements: 2
Logic Type: Buffer, Non-Inverting
Operating Temperature: -40°C ~ 85°C (TA)
Voltage - Supply: 2V ~ 3.6V
Number of Bits per Element: 4
Current - Output High, Low: 4mA, 4mA
Supplier Device Package: 20-SOIC
Part Status: Obsolete
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74LVX245M 74LVX245M onsemi 74lvx245-d.pdf Description: IC TXRX NON-INVERT 3.6V 20SOIC
Packaging: Tube
Package / Case: 20-SOIC (0.295", 7.50mm Width)
Output Type: 3-State
Mounting Type: Surface Mount
Number of Elements: 1
Logic Type: Transceiver, Non-Inverting
Operating Temperature: -40°C ~ 85°C (TA)
Voltage - Supply: 2V ~ 3.6V
Number of Bits per Element: 8
Current - Output High, Low: 4mA, 4mA
Supplier Device Package: 20-SOIC
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74OL6000S 74OL6000S onsemi 74OL6000%2C01%2C10%2C11.pdf Description: OPTOISOLTR 5.3KV PUSH PULL 6-SMD
Packaging: Tube
Package / Case: 6-SMD, Gull Wing
Output Type: Push-Pull, Totem Pole
Mounting Type: Surface Mount
Operating Temperature: 0°C ~ 70°C
Voltage - Supply: 4.5V ~ 5.5V
Data Rate: 15MBd
Input Type: Logic
Voltage - Isolation: 5300Vrms
Inputs - Side 1/Side 2: 1/0
Supplier Device Package: 6-SMD
Rise / Fall Time (Typ): 45ns, 5ns
Common Mode Transient Immunity (Min): 5kV/µs
Propagation Delay tpLH / tpHL (Max): 100ns, 100ns
Number of Channels: 1
Current - Output / Channel: 40 mA
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NDS352P NDS352P onsemi NDS352P.pdf Description: MOSFET P-CH 20V 850MA SUPERSOT3
Packaging: Tape & Reel (TR)
Package / Case: TO-236-3, SC-59, SOT-23-3
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: P-Channel
Current - Continuous Drain (Id) @ 25°C: 850mA (Ta)
Rds On (Max) @ Id, Vgs: 350mOhm @ 1A, 10V
Power Dissipation (Max): 500mW (Ta)
Vgs(th) (Max) @ Id: 2.5V @ 250µA
Supplier Device Package: SOT-23-3
Part Status: Obsolete
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±12V
Drain to Source Voltage (Vdss): 20 V
Gate Charge (Qg) (Max) @ Vgs: 4 nC @ 5 V
Input Capacitance (Ciss) (Max) @ Vds: 125 pF @ 10 V
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NDS356P NDS356P onsemi NDS356P.pdf Description: MOSFET P-CH 20V 1.1A SUPERSOT3
Packaging: Tape & Reel (TR)
Package / Case: TO-236-3, SC-59, SOT-23-3
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: P-Channel
Current - Continuous Drain (Id) @ 25°C: 1.1A (Ta)
Rds On (Max) @ Id, Vgs: 210mOhm @ 1.3A, 10V
Power Dissipation (Max): 500mW (Ta)
Vgs(th) (Max) @ Id: 2.5V @ 250µA
Supplier Device Package: SOT-23-3
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±12V
Drain to Source Voltage (Vdss): 20 V
Gate Charge (Qg) (Max) @ Vgs: 5 nC @ 5 V
Input Capacitance (Ciss) (Max) @ Vds: 180 pF @ 10 V
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NDC7002N NDC7002N onsemi ndc7002n-d.pdf Description: MOSFET 2N-CH 50V 0.51A SSOT6
Packaging: Tape & Reel (TR)
Package / Case: SOT-23-6 Thin, TSOT-23-6
Mounting Type: Surface Mount
Configuration: 2 N-Channel (Dual)
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
Power - Max: 700mW
Drain to Source Voltage (Vdss): 50V
Current - Continuous Drain (Id) @ 25°C: 510mA
Input Capacitance (Ciss) (Max) @ Vds: 20pF @ 25V
Rds On (Max) @ Id, Vgs: 2Ohm @ 510mA, 10V
Gate Charge (Qg) (Max) @ Vgs: 1nC @ 10V
FET Feature: Logic Level Gate
Vgs(th) (Max) @ Id: 2.5V @ 250µA
Supplier Device Package: SuperSOT™-6
на замовлення 63000 шт:
термін постачання 21-31 дні (днів)
3000+11.22 грн
6000+9.88 грн
9000+8.92 грн
15000+8.20 грн
21000+8.04 грн
30000+7.76 грн
Мінімальне замовлення: 3000
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NDC7003P NDC7003P onsemi ndc7003p-d.pdf Description: MOSFET 2P-CH 60V 0.34A SSOT6
Packaging: Tape & Reel (TR)
Package / Case: SOT-23-6 Thin, TSOT-23-6
Mounting Type: Surface Mount
Configuration: 2 P-Channel (Dual)
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
Power - Max: 700mW
Drain to Source Voltage (Vdss): 60V
Current - Continuous Drain (Id) @ 25°C: 340mA
Input Capacitance (Ciss) (Max) @ Vds: 66pF @ 25V
Rds On (Max) @ Id, Vgs: 5Ohm @ 340mA, 10V
Gate Charge (Qg) (Max) @ Vgs: 2.2nC @ 10V
FET Feature: Logic Level Gate
Vgs(th) (Max) @ Id: 3.5V @ 250µA
Supplier Device Package: SuperSOT™-6
Part Status: Active
на замовлення 3000 шт:
термін постачання 21-31 дні (днів)
3000+7.38 грн
Мінімальне замовлення: 3000
В кошику  од. на суму  грн.
NDC7001C NDC7001C onsemi ndc7001c-d.pdf Description: MOSFET N/P-CH 60V 0.51A SSOT6
Packaging: Tape & Reel (TR)
Package / Case: SOT-23-6 Thin, TSOT-23-6
Mounting Type: Surface Mount
Configuration: N and P-Channel
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
Power - Max: 700mW
Drain to Source Voltage (Vdss): 60V
Current - Continuous Drain (Id) @ 25°C: 510mA, 340mA
Input Capacitance (Ciss) (Max) @ Vds: 20pF @ 25V, 66pF @ 25V
Rds On (Max) @ Id, Vgs: 2Ohm @ 510mA, 10V
Gate Charge (Qg) (Max) @ Vgs: 1.5nC @ 10V
FET Feature: Logic Level Gate
Vgs(th) (Max) @ Id: 2.5V @ 250µA
Supplier Device Package: SuperSOT™-6
Part Status: Active
на замовлення 18000 шт:
термін постачання 21-31 дні (днів)
3000+12.12 грн
6000+10.69 грн
9000+10.19 грн
15000+9.03 грн
Мінімальне замовлення: 3000
В кошику  од. на суму  грн.
MMBF170 MMBF170 onsemi MMBF170-D.PDF Description: MOSFET N-CH 60V 500MA SOT23
Packaging: Tape & Reel (TR)
Package / Case: TO-236-3, SC-59, SOT-23-3
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 500mA (Ta)
Rds On (Max) @ Id, Vgs: 5Ohm @ 200mA, 10V
Power Dissipation (Max): 300mW (Ta)
Vgs(th) (Max) @ Id: 3V @ 1mA
Supplier Device Package: SOT-23-3
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 60 V
Input Capacitance (Ciss) (Max) @ Vds: 40 pF @ 10 V
на замовлення 21000 шт:
термін постачання 21-31 дні (днів)
3000+3.69 грн
6000+3.27 грн
9000+2.92 грн
15000+2.55 грн
21000+2.38 грн
Мінімальне замовлення: 3000
В кошику  од. на суму  грн.
NDS7002A NDS7002A onsemi NDS7002A-D.PDF Description: MOSFET N-CH 60V 280MA SOT-23
Packaging: Tape & Reel (TR)
Package / Case: TO-236-3, SC-59, SOT-23-3
Mounting Type: Surface Mount
Operating Temperature: -65°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 280mA (Ta)
Rds On (Max) @ Id, Vgs: 2Ohm @ 500mA, 10V
Power Dissipation (Max): 300mW (Ta)
Vgs(th) (Max) @ Id: 2.5V @ 250µA
Supplier Device Package: SOT-23-3
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 60 V
Input Capacitance (Ciss) (Max) @ Vds: 50 pF @ 25 V
на замовлення 121500 шт:
термін постачання 21-31 дні (днів)
3000+3.76 грн
6000+3.13 грн
9000+2.70 грн
Мінімальне замовлення: 3000
В кошику  од. на суму  грн.
NDS0605 NDS0605 onsemi nds0605-d.pdf Description: MOSFET P-CH 60V 180MA SOT-23
Packaging: Tape & Reel (TR)
Package / Case: TO-236-3, SC-59, SOT-23-3
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: P-Channel
Current - Continuous Drain (Id) @ 25°C: 180mA (Ta)
Rds On (Max) @ Id, Vgs: 5Ohm @ 500mA, 10V
Power Dissipation (Max): 360mW (Ta)
Vgs(th) (Max) @ Id: 3V @ 250µA
Supplier Device Package: SOT-23-3
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 60 V
Gate Charge (Qg) (Max) @ Vgs: 2.5 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 79 pF @ 25 V
на замовлення 15000 шт:
термін постачання 21-31 дні (днів)
3000+4.61 грн
6000+4.08 грн
9000+3.37 грн
15000+2.99 грн
Мінімальне замовлення: 3000
В кошику  од. на суму  грн.
NDS0610 NDS0610 onsemi nds0610-d.pdf Description: MOSFET P-CH 60V 120MA SOT-23
Packaging: Tape & Reel (TR)
Package / Case: TO-236-3, SC-59, SOT-23-3
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: P-Channel
Current - Continuous Drain (Id) @ 25°C: 120mA (Ta)
Rds On (Max) @ Id, Vgs: 10Ohm @ 500mA, 10V
Power Dissipation (Max): 360mW (Ta)
Vgs(th) (Max) @ Id: 3.5V @ 1mA
Supplier Device Package: SOT-23-3
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 60 V
Gate Charge (Qg) (Max) @ Vgs: 2.5 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 79 pF @ 25 V
на замовлення 36000 шт:
термін постачання 21-31 дні (днів)
3000+6.77 грн
6000+6.45 грн
9000+6.26 грн
15000+5.65 грн
21000+5.48 грн
30000+5.00 грн
Мінімальне замовлення: 3000
В кошику  од. на суму  грн.
NDT014 NDT014 onsemi ndt014-d.pdf Description: MOSFET N-CH 60V 2.7A SOT-223-4
Packaging: Tape & Reel (TR)
Package / Case: TO-261-4, TO-261AA
Mounting Type: Surface Mount
Operating Temperature: -65°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 2.7A (Ta)
Rds On (Max) @ Id, Vgs: 200mOhm @ 1.6A, 10V
Power Dissipation (Max): 3W (Ta)
Vgs(th) (Max) @ Id: 4V @ 250µA
Supplier Device Package: SOT-223-4
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 60 V
Gate Charge (Qg) (Max) @ Vgs: 11 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 155 pF @ 25 V
на замовлення 16000 шт:
термін постачання 21-31 дні (днів)
4000+29.30 грн
8000+27.20 грн
Мінімальне замовлення: 4000
В кошику  од. на суму  грн.
NDT455N NDT455N onsemi NDT455N.pdf Description: MOSFET N-CH 30V 11.5A SOT223-4
Packaging: Tape & Reel (TR)
Package / Case: TO-261-4, TO-261AA
Mounting Type: Surface Mount
Operating Temperature: -65°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 11.5A (Ta)
Rds On (Max) @ Id, Vgs: 15mOhm @ 11.5A, 10V
Power Dissipation (Max): 3W (Ta)
Vgs(th) (Max) @ Id: 3V @ 250µA
Supplier Device Package: SOT-223-4
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): 20V
Drain to Source Voltage (Vdss): 30 V
Gate Charge (Qg) (Max) @ Vgs: 61 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 1220 pF @ 15 V
товару немає в наявності
В кошику  од. на суму  грн.
NDT3055 NDT3055 onsemi ndt3055-d.pdf Description: MOSFET N-CH 60V 4A SOT-223-4
Packaging: Tape & Reel (TR)
Package / Case: TO-261-4, TO-261AA
Mounting Type: Surface Mount
Operating Temperature: -65°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 4A (Ta)
Rds On (Max) @ Id, Vgs: 100mOhm @ 4A, 10V
Power Dissipation (Max): 3W (Ta)
Vgs(th) (Max) @ Id: 4V @ 250µA
Supplier Device Package: SOT-223-4
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 60 V
Gate Charge (Qg) (Max) @ Vgs: 15 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 250 pF @ 30 V
на замовлення 4000 шт:
термін постачання 21-31 дні (днів)
4000+26.21 грн
Мінімальне замовлення: 4000
В кошику  од. на суму  грн.
NDT3055L NDT3055L onsemi ndt3055l-d.pdf Description: MOSFET N-CH 60V 4A SOT-223-4
Packaging: Tape & Reel (TR)
Package / Case: TO-261-4, TO-261AA
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 155°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 4A (Ta)
Rds On (Max) @ Id, Vgs: 100mOhm @ 4A, 10V
Power Dissipation (Max): 3W (Ta)
Vgs(th) (Max) @ Id: 2V @ 250µA
Supplier Device Package: SOT-223-4
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 60 V
Gate Charge (Qg) (Max) @ Vgs: 20 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 345 pF @ 25 V
на замовлення 16000 шт:
термін постачання 21-31 дні (днів)
4000+28.69 грн
8000+27.07 грн
Мінімальне замовлення: 4000
В кошику  од. на суму  грн.
NDT456P NDT456P onsemi ndt456p-d.pdf Description: MOSFET P-CH 30V 7.5A SOT-223-4
Packaging: Tape & Reel (TR)
Package / Case: TO-261-4, TO-261AA
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 155°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: P-Channel
Current - Continuous Drain (Id) @ 25°C: 7.5A (Ta)
Rds On (Max) @ Id, Vgs: 30mOhm @ 7.5A, 10V
Power Dissipation (Max): 3W (Ta)
Vgs(th) (Max) @ Id: 3V @ 250µA
Supplier Device Package: SOT-223-4
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 30 V
Gate Charge (Qg) (Max) @ Vgs: 67 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 1440 pF @ 15 V
на замовлення 16000 шт:
термін постачання 21-31 дні (днів)
4000+39.92 грн
8000+35.30 грн
Мінімальне замовлення: 4000
В кошику  од. на суму  грн.
NDT2955 NDT2955 onsemi ndt2955-d.pdf Description: MOSFET P-CH 60V 2.5A SOT-223-4
Packaging: Tape & Reel (TR)
Package / Case: TO-261-4, TO-261AA
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: P-Channel
Current - Continuous Drain (Id) @ 25°C: 2.5A (Ta)
Rds On (Max) @ Id, Vgs: 300mOhm @ 2.5A, 10V
Power Dissipation (Max): 3W (Ta)
Vgs(th) (Max) @ Id: 4V @ 250µA
Supplier Device Package: SOT-223-4
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 60 V
Gate Charge (Qg) (Max) @ Vgs: 15 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 601 pF @ 30 V
на замовлення 80000 шт:
термін постачання 21-31 дні (днів)
4000+16.95 грн
8000+15.61 грн
12000+15.43 грн
20000+13.99 грн
Мінімальне замовлення: 4000
В кошику  од. на суму  грн.
NDS8410 NDS8410 onsemi NDS8410.pdf Description: MOSFET N-CH 30V 10A 8SOIC
Packaging: Tape & Reel (TR)
Package / Case: 8-SOIC (0.154", 3.90mm Width)
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 10A (Ta)
Rds On (Max) @ Id, Vgs: 15mOhm @ 10A, 10V
Power Dissipation (Max): 2.5W (Ta)
Vgs(th) (Max) @ Id: 1.5V @ 250µA
Supplier Device Package: 8-SOIC
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): 20V
Drain to Source Voltage (Vdss): 30 V
Gate Charge (Qg) (Max) @ Vgs: 60 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 1350 pF @ 15 V
товару немає в наявності
В кошику  од. на суму  грн.
NDS9410A NDS9410A onsemi NDS9410A.pdf Description: MOSFET N-CH 30V 7.3A 8SOIC
Packaging: Tape & Reel (TR)
Package / Case: 8-SOIC (0.154", 3.90mm Width)
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 7.3A (Ta)
Rds On (Max) @ Id, Vgs: 28mOhm @ 7.3A, 10V
Power Dissipation (Max): 2.5W (Ta)
Vgs(th) (Max) @ Id: 3V @ 250µA
Supplier Device Package: 8-SOIC
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 30 V
Gate Charge (Qg) (Max) @ Vgs: 22 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 830 pF @ 15 V
товару немає в наявності
В кошику  од. на суму  грн.
NDS9936 NDS9936 onsemi NDS9936.pdf Description: MOSFET 2N-CH 30V 5A 8-SOIC
товару немає в наявності
В кошику  од. на суму  грн.
NDS9945 NDS9945 onsemi nds9945-d.pdf Description: MOSFET 2N-CH 60V 3.5A 8SOIC
Packaging: Tape & Reel (TR)
Package / Case: 8-SOIC (0.154", 3.90mm Width)
Mounting Type: Surface Mount
Configuration: 2 N-Channel (Dual)
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
Power - Max: 900mW
Drain to Source Voltage (Vdss): 60V
Current - Continuous Drain (Id) @ 25°C: 3.5A
Input Capacitance (Ciss) (Max) @ Vds: 345pF @ 25V
Rds On (Max) @ Id, Vgs: 100mOhm @ 3.5A, 10V
Gate Charge (Qg) (Max) @ Vgs: 30nC @ 10V
FET Feature: Logic Level Gate
Vgs(th) (Max) @ Id: 3V @ 250µA
Supplier Device Package: 8-SOIC
Part Status: Active
на замовлення 2500 шт:
термін постачання 21-31 дні (днів)
2500+58.79 грн
Мінімальне замовлення: 2500
В кошику  од. на суму  грн.
NDS9956A NDS9956A onsemi NDS9956A.pdf Description: MOSFET 2N-CH 30V 3.7A 8SOIC
Packaging: Tape & Reel (TR)
Package / Case: 8-SOIC (0.154", 3.90mm Width)
Mounting Type: Surface Mount
Configuration: 2 N-Channel (Dual)
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
Power - Max: 900mW
Drain to Source Voltage (Vdss): 30V
Current - Continuous Drain (Id) @ 25°C: 3.7A
Input Capacitance (Ciss) (Max) @ Vds: 320pF @ 10V
Rds On (Max) @ Id, Vgs: 80mOhm @ 2.2A, 10V
Gate Charge (Qg) (Max) @ Vgs: 27nC @ 10V
FET Feature: Logic Level Gate
Vgs(th) (Max) @ Id: 2.8V @ 250µA
Supplier Device Package: 8-SOIC
товару немає в наявності
В кошику  од. на суму  грн.
NDS9959 NDS9959 onsemi NDS9959.pdf Description: MOSFET 2N-CH 50V 2A 8-SOIC
товару немає в наявності
В кошику  од. на суму  грн.
NDS8434 NDS8434 onsemi NDS8434-D.PDF Description: MOSFET P-CH 20V 6.5A 8SOIC
Packaging: Tape & Reel (TR)
Package / Case: 8-SOIC (0.154", 3.90mm Width)
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: P-Channel
Current - Continuous Drain (Id) @ 25°C: 6.5A (Ta)
Rds On (Max) @ Id, Vgs: 35mOhm @ 6.5A, 4.5V
Power Dissipation (Max): 2.5W (Ta)
Vgs(th) (Max) @ Id: 1V @ 250µA
Supplier Device Package: 8-SOIC
Drive Voltage (Max Rds On, Min Rds On): 2.7V, 4.5V
Vgs (Max): ±8V
Drain to Source Voltage (Vdss): 20 V
Gate Charge (Qg) (Max) @ Vgs: 80 nC @ 4.5 V
Input Capacitance (Ciss) (Max) @ Vds: 2330 pF @ 10 V
товару немає в наявності
В кошику  од. на суму  грн.
NDS9407 NDS9407 onsemi nds9407-d.pdf Description: MOSFET P-CH 60V 3A 8SOIC
Packaging: Tape & Reel (TR)
Package / Case: 8-SOIC (0.154", 3.90mm Width)
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: P-Channel
Current - Continuous Drain (Id) @ 25°C: 3A (Ta)
Rds On (Max) @ Id, Vgs: 150mOhm @ 3A, 10V
Power Dissipation (Max): 2.5W (Ta)
Vgs(th) (Max) @ Id: 3V @ 250µA
Supplier Device Package: 8-SOIC
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 60 V
Gate Charge (Qg) (Max) @ Vgs: 22 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 732 pF @ 30 V
на замовлення 54500 шт:
термін постачання 21-31 дні (днів)
2500+20.76 грн
5000+18.43 грн
7500+17.89 грн
12500+15.45 грн
Мінімальне замовлення: 2500
В кошику  од. на суму  грн.
NDS9430 NDS9430 onsemi NDS9430.pdf Description: MOSFET P-CH 30V 5.3A 8SOIC
Packaging: Tape & Reel (TR)
Package / Case: 8-SOIC (0.154", 3.90mm Width)
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: P-Channel
Current - Continuous Drain (Id) @ 25°C: 5.3A (Ta)
Rds On (Max) @ Id, Vgs: 60mOhm @ 5.3A, 10V
Power Dissipation (Max): 2.5W (Ta)
Vgs(th) (Max) @ Id: 3V @ 250µA
Supplier Device Package: 8-SOIC
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 30 V
Gate Charge (Qg) (Max) @ Vgs: 14 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 528 pF @ 15 V
товару немає в наявності
В кошику  од. на суму  грн.
NDS9435A NDS9435A onsemi NDS9435A.pdf Description: MOSFET P-CH 30V 5.3A 8SOIC
Packaging: Tape & Reel (TR)
Package / Case: 8-SOIC (0.154", 3.90mm Width)
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: P-Channel
Current - Continuous Drain (Id) @ 25°C: 5.3A (Ta)
Rds On (Max) @ Id, Vgs: 50mOhm @ 5.3A, 10V
Power Dissipation (Max): 2.5W (Ta)
Vgs(th) (Max) @ Id: 3V @ 250µA
Supplier Device Package: 8-SOIC
Part Status: Obsolete
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±25V
Drain to Source Voltage (Vdss): 30 V
Gate Charge (Qg) (Max) @ Vgs: 14 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 528 pF @ 15 V
товару немає в наявності
В кошику  од. на суму  грн.
NDS9948 NDS9948 onsemi nds9948-d.pdf Description: MOSFET 2P-CH 60V 2.3A 8SOIC
Packaging: Tape & Reel (TR)
Package / Case: 8-SOIC (0.154", 3.90mm Width)
Mounting Type: Surface Mount
Configuration: 2 P-Channel (Dual)
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
Power - Max: 900mW
Drain to Source Voltage (Vdss): 60V
Current - Continuous Drain (Id) @ 25°C: 2.3A
Input Capacitance (Ciss) (Max) @ Vds: 394pF @ 30V
Rds On (Max) @ Id, Vgs: 250mOhm @ 2.3A, 10V
Gate Charge (Qg) (Max) @ Vgs: 13nC @ 10V
FET Feature: Logic Level Gate
Vgs(th) (Max) @ Id: 3V @ 250µA
Supplier Device Package: 8-SOIC
Part Status: Active
на замовлення 7500 шт:
термін постачання 21-31 дні (днів)
2500+19.49 грн
5000+17.92 грн
7500+17.14 грн
Мінімальне замовлення: 2500
В кошику  од. на суму  грн.
NDS9953A NDS9953A onsemi NDS9953A.pdf Description: MOSFET 2P-CH 30V 2.9A 8SOIC
Packaging: Tape & Reel (TR)
Package / Case: 8-SOIC (0.154", 3.90mm Width)
Mounting Type: Surface Mount
Configuration: 2 P-Channel (Dual)
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
Power - Max: 900mW
Drain to Source Voltage (Vdss): 30V
Current - Continuous Drain (Id) @ 25°C: 2.9A
Input Capacitance (Ciss) (Max) @ Vds: 350pF @ 10V
Rds On (Max) @ Id, Vgs: 130mOhm @ 1A, 10V
Gate Charge (Qg) (Max) @ Vgs: 25nC @ 10V
FET Feature: Logic Level Gate
Vgs(th) (Max) @ Id: 2.8V @ 250µA
Supplier Device Package: 8-SOIC
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NDS8958 NDS8958 onsemi NDS8958.pdf Description: MOSFET N/P-CH 30V 5.3A/4A 8SOIC
Packaging: Tape & Reel (TR)
Package / Case: 8-SOIC (0.154", 3.90mm Width)
Mounting Type: Surface Mount
Configuration: N and P-Channel
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
Power - Max: 900mW
Drain to Source Voltage (Vdss): 30V
Current - Continuous Drain (Id) @ 25°C: 5.3A, 4A
Input Capacitance (Ciss) (Max) @ Vds: 720pF @ 15V
Rds On (Max) @ Id, Vgs: 35mOhm @ 5.3A, 10V
Gate Charge (Qg) (Max) @ Vgs: 30nC @ 10V
FET Feature: Logic Level Gate
Vgs(th) (Max) @ Id: 2.8V @ 250µA
Supplier Device Package: 8-SOIC
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NDS9943 NDS9943 onsemi Description: MOSFET N/P-CH 20V 3A/2.8A 8SOIC
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NDS9958 NDS9958 onsemi NDS9958.pdf Description: MOSFET N/P-CH 20V 3.5A 8SOIC
Packaging: Tape & Reel (TR)
Package / Case: 8-SOIC (0.154", 3.90mm Width)
Mounting Type: Surface Mount
Configuration: N and P-Channel
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
Power - Max: 900mW
Drain to Source Voltage (Vdss): 20V
Current - Continuous Drain (Id) @ 25°C: 3.5A
Input Capacitance (Ciss) (Max) @ Vds: 525pF @ 10V
Rds On (Max) @ Id, Vgs: 100mOhm @ 3.5A, 10V
Gate Charge (Qg) (Max) @ Vgs: 30nC @ 10V
FET Feature: Logic Level Gate
Vgs(th) (Max) @ Id: 3V @ 250µA
Supplier Device Package: 8-SOIC
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NDS8852H NDS8852H onsemi NDS8852H.pdf Description: MOSFET N/P-CH 30V 4.3A 8SOIC
Packaging: Tape & Reel (TR)
Package / Case: 8-SOIC (0.154", 3.90mm Width)
Mounting Type: Surface Mount
Configuration: N and P-Channel
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
Power - Max: 1W
Drain to Source Voltage (Vdss): 30V
Current - Continuous Drain (Id) @ 25°C: 4.3A, 3.4A
Input Capacitance (Ciss) (Max) @ Vds: 300pF @ 15V
Rds On (Max) @ Id, Vgs: 80mOhm @ 3.4A, 10V
Gate Charge (Qg) (Max) @ Vgs: 25nC @ 10V
FET Feature: Logic Level Gate
Vgs(th) (Max) @ Id: 2.8V @ 250µA
Supplier Device Package: 8-SOIC
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NM93C46EM8 NM93C46.pdf
NM93C46EM8
Виробник: onsemi
Description: IC EEPROM 1KBIT MICROWIRE 8SOIC
Packaging: Tube
Package / Case: 8-SOIC (0.154", 3.90mm Width)
Mounting Type: Surface Mount
Memory Size: 1Kbit
Memory Type: Non-Volatile
Operating Temperature: -40°C ~ 85°C (TA)
Voltage - Supply: 4.5V ~ 5.5V
Technology: EEPROM
Clock Frequency: 1 MHz
Memory Format: EEPROM
Supplier Device Package: 8-SOIC
Write Cycle Time - Word, Page: 10ms
Memory Interface: Microwire
Memory Organization: 64 x 16
DigiKey Programmable: Not Verified
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NM93C46LZM8 NM93C46.pdf
NM93C46LZM8
Виробник: onsemi
Description: IC EEPROM 1KBIT MICROWIRE 8SOIC
Packaging: Tube
Package / Case: 8-SOIC (0.154", 3.90mm Width)
Mounting Type: Surface Mount
Memory Size: 1Kbit
Memory Type: Non-Volatile
Operating Temperature: 0°C ~ 70°C (TA)
Voltage - Supply: 2.7V ~ 5.5V
Technology: EEPROM
Clock Frequency: 250 kHz
Memory Format: EEPROM
Supplier Device Package: 8-SOIC
Write Cycle Time - Word, Page: 15ms
Memory Interface: Microwire
Memory Organization: 64 x 16
DigiKey Programmable: Not Verified
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NM93C46LZN NM93C46.pdf
NM93C46LZN
Виробник: onsemi
Description: IC EEPROM 1KBIT MICROWIRE 8DIP
Packaging: Tube
Package / Case: 8-DIP (0.300", 7.62mm)
Mounting Type: Through Hole
Memory Size: 1Kbit
Memory Type: Non-Volatile
Operating Temperature: 0°C ~ 70°C (TA)
Voltage - Supply: 2.7V ~ 5.5V
Technology: EEPROM
Clock Frequency: 250 kHz
Memory Format: EEPROM
Supplier Device Package: 8-DIP
Write Cycle Time - Word, Page: 15ms
Memory Interface: Microwire
Memory Organization: 64 x 16
DigiKey Programmable: Not Verified
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NM93C56EN NM93C56.pdf
NM93C56EN
Виробник: onsemi
Description: IC EEPROM 2KBIT MICROWIRE 8DIP
Packaging: Tube
Package / Case: 8-DIP (0.300", 7.62mm)
Mounting Type: Through Hole
Memory Size: 2Kbit
Memory Type: Non-Volatile
Operating Temperature: -40°C ~ 85°C (TA)
Voltage - Supply: 4.5V ~ 5.5V
Technology: EEPROM
Clock Frequency: 1 MHz
Memory Format: EEPROM
Supplier Device Package: 8-DIP
Part Status: Obsolete
Write Cycle Time - Word, Page: 10ms
Memory Interface: Microwire
Memory Organization: 128 x 16
DigiKey Programmable: Not Verified
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NM93C56LN NM93C56.pdf
NM93C56LN
Виробник: onsemi
Description: IC EEPROM 2KBIT MICROWIRE 8DIP
Packaging: Tube
Package / Case: 8-DIP (0.300", 7.62mm)
Mounting Type: Through Hole
Memory Size: 2Kbit
Memory Type: Non-Volatile
Operating Temperature: 0°C ~ 70°C (TA)
Voltage - Supply: 2.7V ~ 5.5V
Technology: EEPROM
Clock Frequency: 250 kHz
Memory Format: EEPROM
Supplier Device Package: 8-DIP
Write Cycle Time - Word, Page: 15ms
Memory Interface: Microwire
Memory Organization: 128 x 16
DigiKey Programmable: Not Verified
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NM93C56LZM8 NM93C56.pdf
NM93C56LZM8
Виробник: onsemi
Description: IC EEPROM 2KBIT MICROWIRE 8SOIC
Packaging: Tube
Package / Case: 8-SOIC (0.154", 3.90mm Width)
Mounting Type: Surface Mount
Memory Size: 2Kbit
Memory Type: Non-Volatile
Operating Temperature: 0°C ~ 70°C (TA)
Voltage - Supply: 2.7V ~ 5.5V
Technology: EEPROM
Clock Frequency: 250 kHz
Memory Format: EEPROM
Supplier Device Package: 8-SOIC
Write Cycle Time - Word, Page: 15ms
Memory Interface: Microwire
Memory Organization: 128 x 16
DigiKey Programmable: Not Verified
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NM93C56LZN NM93C56.pdf
NM93C56LZN
Виробник: onsemi
Description: IC EEPROM 2KBIT MICROWIRE 8DIP
Packaging: Tube
Package / Case: 8-DIP (0.300", 7.62mm)
Mounting Type: Through Hole
Memory Size: 2Kbit
Memory Type: Non-Volatile
Operating Temperature: 0°C ~ 70°C (TA)
Voltage - Supply: 2.7V ~ 5.5V
Technology: EEPROM
Clock Frequency: 250 kHz
Memory Format: EEPROM
Supplier Device Package: 8-DIP
Write Cycle Time - Word, Page: 15ms
Memory Interface: Microwire
Memory Organization: 128 x 16
DigiKey Programmable: Not Verified
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NM93C56M8 NM93C56.pdf
NM93C56M8
Виробник: onsemi
Description: IC EEPROM 2KBIT MICROWIRE 8SOIC
Packaging: Tube
Package / Case: 8-SOIC (0.154", 3.90mm Width)
Mounting Type: Surface Mount
Memory Size: 2Kbit
Memory Type: Non-Volatile
Operating Temperature: 0°C ~ 70°C (TA)
Voltage - Supply: 4.5V ~ 5.5V
Technology: EEPROM
Clock Frequency: 1 MHz
Memory Format: EEPROM
Supplier Device Package: 8-SOIC
Write Cycle Time - Word, Page: 10ms
Memory Interface: Microwire
Memory Organization: 128 x 16
DigiKey Programmable: Not Verified
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NM93C66EM8 NM93C66.pdf
NM93C66EM8
Виробник: onsemi
Description: IC EEPROM 4KBIT MICROWIRE 8SOIC
Packaging: Tube
Package / Case: 8-SOIC (0.154", 3.90mm Width)
Mounting Type: Surface Mount
Memory Size: 4Kbit
Memory Type: Non-Volatile
Operating Temperature: -40°C ~ 85°C (TA)
Voltage - Supply: 4.5V ~ 5.5V
Technology: EEPROM
Clock Frequency: 1 MHz
Memory Format: EEPROM
Supplier Device Package: 8-SOIC
Part Status: Obsolete
Write Cycle Time - Word, Page: 10ms
Memory Interface: Microwire
Memory Organization: 256 x 16
DigiKey Programmable: Not Verified
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NM93C66EN NM93C66.pdf
NM93C66EN
Виробник: onsemi
Description: IC EEPROM 4KBIT MICROWIRE 8DIP
Packaging: Tube
Package / Case: 8-DIP (0.300", 7.62mm)
Mounting Type: Through Hole
Memory Size: 4Kbit
Memory Type: Non-Volatile
Operating Temperature: -40°C ~ 85°C (TA)
Voltage - Supply: 4.5V ~ 5.5V
Technology: EEPROM
Clock Frequency: 1 MHz
Memory Format: EEPROM
Supplier Device Package: 8-DIP
Part Status: Obsolete
Write Cycle Time - Word, Page: 10ms
Memory Interface: Microwire
Memory Organization: 256 x 16
DigiKey Programmable: Not Verified
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NM93C66LN NM93C66.pdf
NM93C66LN
Виробник: onsemi
Description: IC EEPROM 4KBIT MICROWIRE 8DIP
Packaging: Tube
Package / Case: 8-DIP (0.300", 7.62mm)
Mounting Type: Through Hole
Memory Size: 4Kbit
Memory Type: Non-Volatile
Operating Temperature: 0°C ~ 70°C (TA)
Voltage - Supply: 2.7V ~ 5.5V
Technology: EEPROM
Clock Frequency: 250 kHz
Memory Format: EEPROM
Supplier Device Package: 8-DIP
Part Status: Obsolete
Write Cycle Time - Word, Page: 15ms
Memory Interface: Microwire
Memory Organization: 256 x 16
DigiKey Programmable: Not Verified
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NM93C66M8 NM93C66.pdf
NM93C66M8
Виробник: onsemi
Description: IC EEPROM 4KBIT MICROWIRE 8SOIC
Packaging: Tube
Package / Case: 8-SOIC (0.154", 3.90mm Width)
Mounting Type: Surface Mount
Memory Size: 4Kbit
Memory Type: Non-Volatile
Operating Temperature: 0°C ~ 70°C (TA)
Voltage - Supply: 4.5V ~ 5.5V
Technology: EEPROM
Clock Frequency: 1 MHz
Memory Format: EEPROM
Supplier Device Package: 8-SOIC
Part Status: Obsolete
Write Cycle Time - Word, Page: 10ms
Memory Interface: Microwire
Memory Organization: 256 x 16
DigiKey Programmable: Not Verified
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NM93C66M
NM93C66M
Виробник: onsemi
Description: IC EEPROM 4KBIT SPI 1MHZ 14SOIC
Packaging: Tube
Package / Case: 14-SOIC (0.154", 3.90mm Width)
Mounting Type: Surface Mount
Memory Size: 4Kbit
Memory Type: Non-Volatile
Operating Temperature: 0°C ~ 70°C (TA)
Voltage - Supply: 4.5V ~ 5.5V
Technology: EEPROM
Clock Frequency: 1 MHz
Memory Format: EEPROM
Supplier Device Package: 14-SOIC
Part Status: Obsolete
Write Cycle Time - Word, Page: 10ms
Memory Interface: Microwire
Memory Organization: 256 x 16
DigiKey Programmable: Not Verified
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NM93C86AM8 NM93C86A.pdf
NM93C86AM8
Виробник: onsemi
Description: IC EEPROM 16KBIT MICROWIRE 8SOIC
Packaging: Tube
Package / Case: 8-SOIC (0.154", 3.90mm Width)
Mounting Type: Surface Mount
Memory Size: 16Kbit
Memory Type: Non-Volatile
Operating Temperature: 0°C ~ 70°C (TA)
Voltage - Supply: 4.5V ~ 5.5V
Technology: EEPROM
Clock Frequency: 1 MHz
Memory Format: EEPROM
Supplier Device Package: 8-SOIC
Write Cycle Time - Word, Page: 10ms
Memory Interface: Microwire
Memory Organization: 2K x 8, 1K x 16
DigiKey Programmable: Not Verified
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NM93C86AN NM93C86A.pdf
NM93C86AN
Виробник: onsemi
Description: IC EEPROM 16KBIT MICROWIRE 8DIP
Packaging: Tube
Package / Case: 8-DIP (0.300", 7.62mm)
Mounting Type: Through Hole
Memory Size: 16Kbit
Memory Type: Non-Volatile
Operating Temperature: 0°C ~ 70°C (TA)
Voltage - Supply: 4.5V ~ 5.5V
Technology: EEPROM
Clock Frequency: 1 MHz
Memory Format: EEPROM
Supplier Device Package: 8-DIP
Part Status: Obsolete
Write Cycle Time - Word, Page: 10ms
Memory Interface: Microwire
Memory Organization: 2K x 8, 1K x 16
DigiKey Programmable: Not Verified
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NM93CS46M8 NM93CS46.pdf
NM93CS46M8
Виробник: onsemi
Description: IC EEPROM 1KBIT MICROWIRE 8SOIC
Packaging: Tube
Package / Case: 8-SOIC (0.154", 3.90mm Width)
Mounting Type: Surface Mount
Memory Size: 1Kbit
Memory Type: Non-Volatile
Operating Temperature: 0°C ~ 70°C (TA)
Voltage - Supply: 4.5V ~ 5.5V
Technology: EEPROM
Clock Frequency: 1 MHz
Memory Format: EEPROM
Supplier Device Package: 8-SOIC
Write Cycle Time - Word, Page: 10ms
Memory Interface: Microwire
Memory Organization: 64 x 16
DigiKey Programmable: Not Verified
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NMC27C64N150 NMC27C64.pdf
NMC27C64N150
Виробник: onsemi
Description: IC EPROM 64KBIT PARALLEL 28DIP
Packaging: Tube
Package / Case: 28-DIP (0.600", 15.24mm)
Mounting Type: Through Hole
Memory Size: 64Kbit
Memory Type: Non-Volatile
Operating Temperature: 0°C ~ 70°C (TA)
Voltage - Supply: 4.5V ~ 5.5V
Technology: EPROM - OTP
Memory Format: EPROM
Supplier Device Package: 28-PDIP
Part Status: Obsolete
Memory Interface: Parallel
Access Time: 150 ns
Memory Organization: 8K x 8
DigiKey Programmable: Not Verified
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74ABT245CSC 74ABT245.pdf
74ABT245CSC
Виробник: onsemi
Description: IC TXRX NON-INVERT 5.5V 20SOIC
Package / Case: 20-SOIC (0.295", 7.50mm Width)
Output Type: 3-State
Mounting Type: Surface Mount
Number of Elements: 1
Logic Type: Transceiver, Non-Inverting
Operating Temperature: -40°C ~ 85°C (TA)
Voltage - Supply: 4.5V ~ 5.5V
Number of Bits per Element: 8
Current - Output High, Low: 32mA, 64mA
Supplier Device Package: 20-SOIC
Part Status: Obsolete
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74F157ASC 74F157A.pdf
74F157ASC
Виробник: onsemi
Description: IC MULTIPLEXER 4 X 2:1 16SOIC
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74F245SCX 74F245%2CRev.Jan08.pdf
74F245SCX
Виробник: onsemi
Description: IC TXRX NON-INVERT 5.5V 20SOIC
Packaging: Tape & Reel (TR)
Package / Case: 20-SOIC (0.295", 7.50mm Width)
Output Type: 3-State
Mounting Type: Surface Mount
Number of Elements: 1
Logic Type: Transceiver, Non-Inverting
Operating Temperature: 0°C ~ 70°C (TA)
Voltage - Supply: 4.5V ~ 5.5V
Number of Bits per Element: 8
Current - Output High, Low: 3mA, 24mA; 15mA, 64mA
Supplier Device Package: 20-SOIC
Part Status: Obsolete
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74F257ASC DS_261_74F257A.pdf
74F257ASC
Виробник: onsemi
Description: IC MULTIPLEXER 4 X 2:1 16SOIC
Packaging: Tube
Package / Case: 16-SOIC (0.154", 3.90mm Width)
Mounting Type: Surface Mount
Circuit: 4 x 2:1
Type: Multiplexer
Operating Temperature: 0°C ~ 70°C
Voltage - Supply: 4.5V ~ 5.5V
Independent Circuits: 1
Current - Output High, Low: 3mA, 24mA
Voltage Supply Source: Single Supply
Supplier Device Package: 16-SOIC
Part Status: Obsolete
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74F30PC DS_261_74F30.pdf
74F30PC
Виробник: onsemi
Description: IC GATE NAND 1CH 8-INP 14DIP
Packaging: Tube
Package / Case: 14-DIP (0.300", 7.62mm)
Mounting Type: Through Hole
Logic Type: NAND Gate
Operating Temperature: 0°C ~ 70°C
Voltage - Supply: 4.5V ~ 5.5V
Current - Output High, Low: 1mA, 20mA
Number of Inputs: 8
Supplier Device Package: 14-MDIP
Input Logic Level - High: 2V
Input Logic Level - Low: 0.8V
Max Propagation Delay @ V, Max CL: 5ns @ 5V, 50pF
Number of Circuits: 1
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74VHC4046N 74VHC4046.pdf
74VHC4046N
Виробник: onsemi
Description: IC PHASE LOCK LOOP 16DIP
Packaging: Tube
Package / Case: 16-DIP (0.300", 7.62mm)
Mounting Type: Through Hole
Output: 3-State
Frequency - Max: 14MHz
Type: Phase Lock Loop (PLL)
Input: CMOS
Operating Temperature: -40°C ~ 85°C
Voltage - Supply: 2V ~ 6V
Ratio - Input:Output: 1:2
Differential - Input:Output: No/No
Supplier Device Package: 16-PDIP
PLL: No
Divider/Multiplier: No/No
Part Status: Obsolete
Number of Circuits: 1
DigiKey Programmable: Not Verified
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DM74ALS11AM DM74ALS11A.pdf
DM74ALS11AM
Виробник: onsemi
Description: IC GATE AND 3CH 3-INP 14SOIC
Packaging: Tube
Package / Case: 14-SOIC (0.154", 3.90mm Width)
Mounting Type: Surface Mount
Logic Type: AND Gate
Operating Temperature: 0°C ~ 70°C
Voltage - Supply: 4.5V ~ 5.5V
Current - Output High, Low: 400µA, 8mA
Number of Inputs: 3
Supplier Device Package: 14-SOIC
Input Logic Level - High: 2V
Input Logic Level - Low: 0.8V
Max Propagation Delay @ V, Max CL: 13ns @ 5V, 50pF
Number of Circuits: 3
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NM93C46M8X NM93C46.pdf
NM93C46M8X
Виробник: onsemi
Description: IC EEPROM 1KBIT MICROWIRE 8SOIC
Packaging: Tape & Reel (TR)
Package / Case: 8-SOIC (0.154", 3.90mm Width)
Mounting Type: Surface Mount
Memory Size: 1Kbit
Memory Type: Non-Volatile
Operating Temperature: 0°C ~ 70°C (TA)
Voltage - Supply: 4.5V ~ 5.5V
Technology: EEPROM
Clock Frequency: 1 MHz
Memory Format: EEPROM
Supplier Device Package: 8-SOIC
Write Cycle Time - Word, Page: 10ms
Memory Interface: Microwire
Memory Organization: 64 x 16
DigiKey Programmable: Not Verified
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CD40106BCN CD40106BC.pdf
CD40106BCN
Виробник: onsemi
Description: IC INVERT SCHMITT 6CH 1IN 14MDIP
Packaging: Tube
Features: Schmitt Trigger
Package / Case: 14-DIP (0.300", 7.62mm)
Mounting Type: Through Hole
Logic Type: Inverter
Operating Temperature: -55°C ~ 125°C
Voltage - Supply: 3V ~ 15V
Current - Output High, Low: 3.4mA, 3.4mA
Number of Inputs: 1
Supplier Device Package: 14-MDIP
Input Logic Level - High: 4.3V ~ 12.9V
Input Logic Level - Low: 0.7V ~ 2.1V
Max Propagation Delay @ V, Max CL: 160ns @ 15V, 50pF
Part Status: Obsolete
Number of Circuits: 6
Current - Quiescent (Max): 4 µA
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74LVX244M ONSM-S-A0003585048-1.pdf?t.download=true&u=5oefqw
74LVX244M
Виробник: onsemi
Description: IC BUF NON-INVERT 3.6V 20SOIC
Packaging: Tube
Package / Case: 20-SOIC (0.295", 7.50mm Width)
Output Type: 3-State
Mounting Type: Surface Mount
Number of Elements: 2
Logic Type: Buffer, Non-Inverting
Operating Temperature: -40°C ~ 85°C (TA)
Voltage - Supply: 2V ~ 3.6V
Number of Bits per Element: 4
Current - Output High, Low: 4mA, 4mA
Supplier Device Package: 20-SOIC
Part Status: Obsolete
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74LVX245M 74lvx245-d.pdf
74LVX245M
Виробник: onsemi
Description: IC TXRX NON-INVERT 3.6V 20SOIC
Packaging: Tube
Package / Case: 20-SOIC (0.295", 7.50mm Width)
Output Type: 3-State
Mounting Type: Surface Mount
Number of Elements: 1
Logic Type: Transceiver, Non-Inverting
Operating Temperature: -40°C ~ 85°C (TA)
Voltage - Supply: 2V ~ 3.6V
Number of Bits per Element: 8
Current - Output High, Low: 4mA, 4mA
Supplier Device Package: 20-SOIC
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74OL6000S 74OL6000%2C01%2C10%2C11.pdf
74OL6000S
Виробник: onsemi
Description: OPTOISOLTR 5.3KV PUSH PULL 6-SMD
Packaging: Tube
Package / Case: 6-SMD, Gull Wing
Output Type: Push-Pull, Totem Pole
Mounting Type: Surface Mount
Operating Temperature: 0°C ~ 70°C
Voltage - Supply: 4.5V ~ 5.5V
Data Rate: 15MBd
Input Type: Logic
Voltage - Isolation: 5300Vrms
Inputs - Side 1/Side 2: 1/0
Supplier Device Package: 6-SMD
Rise / Fall Time (Typ): 45ns, 5ns
Common Mode Transient Immunity (Min): 5kV/µs
Propagation Delay tpLH / tpHL (Max): 100ns, 100ns
Number of Channels: 1
Current - Output / Channel: 40 mA
товару немає в наявності
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NDS352P NDS352P.pdf
NDS352P
Виробник: onsemi
Description: MOSFET P-CH 20V 850MA SUPERSOT3
Packaging: Tape & Reel (TR)
Package / Case: TO-236-3, SC-59, SOT-23-3
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: P-Channel
Current - Continuous Drain (Id) @ 25°C: 850mA (Ta)
Rds On (Max) @ Id, Vgs: 350mOhm @ 1A, 10V
Power Dissipation (Max): 500mW (Ta)
Vgs(th) (Max) @ Id: 2.5V @ 250µA
Supplier Device Package: SOT-23-3
Part Status: Obsolete
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±12V
Drain to Source Voltage (Vdss): 20 V
Gate Charge (Qg) (Max) @ Vgs: 4 nC @ 5 V
Input Capacitance (Ciss) (Max) @ Vds: 125 pF @ 10 V
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NDS356P NDS356P.pdf
NDS356P
Виробник: onsemi
Description: MOSFET P-CH 20V 1.1A SUPERSOT3
Packaging: Tape & Reel (TR)
Package / Case: TO-236-3, SC-59, SOT-23-3
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: P-Channel
Current - Continuous Drain (Id) @ 25°C: 1.1A (Ta)
Rds On (Max) @ Id, Vgs: 210mOhm @ 1.3A, 10V
Power Dissipation (Max): 500mW (Ta)
Vgs(th) (Max) @ Id: 2.5V @ 250µA
Supplier Device Package: SOT-23-3
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±12V
Drain to Source Voltage (Vdss): 20 V
Gate Charge (Qg) (Max) @ Vgs: 5 nC @ 5 V
Input Capacitance (Ciss) (Max) @ Vds: 180 pF @ 10 V
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NDC7002N ndc7002n-d.pdf
NDC7002N
Виробник: onsemi
Description: MOSFET 2N-CH 50V 0.51A SSOT6
Packaging: Tape & Reel (TR)
Package / Case: SOT-23-6 Thin, TSOT-23-6
Mounting Type: Surface Mount
Configuration: 2 N-Channel (Dual)
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
Power - Max: 700mW
Drain to Source Voltage (Vdss): 50V
Current - Continuous Drain (Id) @ 25°C: 510mA
Input Capacitance (Ciss) (Max) @ Vds: 20pF @ 25V
Rds On (Max) @ Id, Vgs: 2Ohm @ 510mA, 10V
Gate Charge (Qg) (Max) @ Vgs: 1nC @ 10V
FET Feature: Logic Level Gate
Vgs(th) (Max) @ Id: 2.5V @ 250µA
Supplier Device Package: SuperSOT™-6
на замовлення 63000 шт:
термін постачання 21-31 дні (днів)
Кількість Ціна
3000+11.22 грн
6000+9.88 грн
9000+8.92 грн
15000+8.20 грн
21000+8.04 грн
30000+7.76 грн
Мінімальне замовлення: 3000
В кошику  од. на суму  грн.
NDC7003P ndc7003p-d.pdf
NDC7003P
Виробник: onsemi
Description: MOSFET 2P-CH 60V 0.34A SSOT6
Packaging: Tape & Reel (TR)
Package / Case: SOT-23-6 Thin, TSOT-23-6
Mounting Type: Surface Mount
Configuration: 2 P-Channel (Dual)
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
Power - Max: 700mW
Drain to Source Voltage (Vdss): 60V
Current - Continuous Drain (Id) @ 25°C: 340mA
Input Capacitance (Ciss) (Max) @ Vds: 66pF @ 25V
Rds On (Max) @ Id, Vgs: 5Ohm @ 340mA, 10V
Gate Charge (Qg) (Max) @ Vgs: 2.2nC @ 10V
FET Feature: Logic Level Gate
Vgs(th) (Max) @ Id: 3.5V @ 250µA
Supplier Device Package: SuperSOT™-6
Part Status: Active
на замовлення 3000 шт:
термін постачання 21-31 дні (днів)
Кількість Ціна
3000+7.38 грн
Мінімальне замовлення: 3000
В кошику  од. на суму  грн.
NDC7001C ndc7001c-d.pdf
NDC7001C
Виробник: onsemi
Description: MOSFET N/P-CH 60V 0.51A SSOT6
Packaging: Tape & Reel (TR)
Package / Case: SOT-23-6 Thin, TSOT-23-6
Mounting Type: Surface Mount
Configuration: N and P-Channel
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
Power - Max: 700mW
Drain to Source Voltage (Vdss): 60V
Current - Continuous Drain (Id) @ 25°C: 510mA, 340mA
Input Capacitance (Ciss) (Max) @ Vds: 20pF @ 25V, 66pF @ 25V
Rds On (Max) @ Id, Vgs: 2Ohm @ 510mA, 10V
Gate Charge (Qg) (Max) @ Vgs: 1.5nC @ 10V
FET Feature: Logic Level Gate
Vgs(th) (Max) @ Id: 2.5V @ 250µA
Supplier Device Package: SuperSOT™-6
Part Status: Active
на замовлення 18000 шт:
термін постачання 21-31 дні (днів)
Кількість Ціна
3000+12.12 грн
6000+10.69 грн
9000+10.19 грн
15000+9.03 грн
Мінімальне замовлення: 3000
В кошику  од. на суму  грн.
MMBF170 MMBF170-D.PDF
MMBF170
Виробник: onsemi
Description: MOSFET N-CH 60V 500MA SOT23
Packaging: Tape & Reel (TR)
Package / Case: TO-236-3, SC-59, SOT-23-3
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 500mA (Ta)
Rds On (Max) @ Id, Vgs: 5Ohm @ 200mA, 10V
Power Dissipation (Max): 300mW (Ta)
Vgs(th) (Max) @ Id: 3V @ 1mA
Supplier Device Package: SOT-23-3
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 60 V
Input Capacitance (Ciss) (Max) @ Vds: 40 pF @ 10 V
на замовлення 21000 шт:
термін постачання 21-31 дні (днів)
Кількість Ціна
3000+3.69 грн
6000+3.27 грн
9000+2.92 грн
15000+2.55 грн
21000+2.38 грн
Мінімальне замовлення: 3000
В кошику  од. на суму  грн.
NDS7002A NDS7002A-D.PDF
NDS7002A
Виробник: onsemi
Description: MOSFET N-CH 60V 280MA SOT-23
Packaging: Tape & Reel (TR)
Package / Case: TO-236-3, SC-59, SOT-23-3
Mounting Type: Surface Mount
Operating Temperature: -65°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 280mA (Ta)
Rds On (Max) @ Id, Vgs: 2Ohm @ 500mA, 10V
Power Dissipation (Max): 300mW (Ta)
Vgs(th) (Max) @ Id: 2.5V @ 250µA
Supplier Device Package: SOT-23-3
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 60 V
Input Capacitance (Ciss) (Max) @ Vds: 50 pF @ 25 V
на замовлення 121500 шт:
термін постачання 21-31 дні (днів)
Кількість Ціна
3000+3.76 грн
6000+3.13 грн
9000+2.70 грн
Мінімальне замовлення: 3000
В кошику  од. на суму  грн.
NDS0605 nds0605-d.pdf
NDS0605
Виробник: onsemi
Description: MOSFET P-CH 60V 180MA SOT-23
Packaging: Tape & Reel (TR)
Package / Case: TO-236-3, SC-59, SOT-23-3
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: P-Channel
Current - Continuous Drain (Id) @ 25°C: 180mA (Ta)
Rds On (Max) @ Id, Vgs: 5Ohm @ 500mA, 10V
Power Dissipation (Max): 360mW (Ta)
Vgs(th) (Max) @ Id: 3V @ 250µA
Supplier Device Package: SOT-23-3
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 60 V
Gate Charge (Qg) (Max) @ Vgs: 2.5 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 79 pF @ 25 V
на замовлення 15000 шт:
термін постачання 21-31 дні (днів)
Кількість Ціна
3000+4.61 грн
6000+4.08 грн
9000+3.37 грн
15000+2.99 грн
Мінімальне замовлення: 3000
В кошику  од. на суму  грн.
NDS0610 nds0610-d.pdf
NDS0610
Виробник: onsemi
Description: MOSFET P-CH 60V 120MA SOT-23
Packaging: Tape & Reel (TR)
Package / Case: TO-236-3, SC-59, SOT-23-3
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: P-Channel
Current - Continuous Drain (Id) @ 25°C: 120mA (Ta)
Rds On (Max) @ Id, Vgs: 10Ohm @ 500mA, 10V
Power Dissipation (Max): 360mW (Ta)
Vgs(th) (Max) @ Id: 3.5V @ 1mA
Supplier Device Package: SOT-23-3
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 60 V
Gate Charge (Qg) (Max) @ Vgs: 2.5 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 79 pF @ 25 V
на замовлення 36000 шт:
термін постачання 21-31 дні (днів)
Кількість Ціна
3000+6.77 грн
6000+6.45 грн
9000+6.26 грн
15000+5.65 грн
21000+5.48 грн
30000+5.00 грн
Мінімальне замовлення: 3000
В кошику  од. на суму  грн.
NDT014 ndt014-d.pdf
NDT014
Виробник: onsemi
Description: MOSFET N-CH 60V 2.7A SOT-223-4
Packaging: Tape & Reel (TR)
Package / Case: TO-261-4, TO-261AA
Mounting Type: Surface Mount
Operating Temperature: -65°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 2.7A (Ta)
Rds On (Max) @ Id, Vgs: 200mOhm @ 1.6A, 10V
Power Dissipation (Max): 3W (Ta)
Vgs(th) (Max) @ Id: 4V @ 250µA
Supplier Device Package: SOT-223-4
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 60 V
Gate Charge (Qg) (Max) @ Vgs: 11 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 155 pF @ 25 V
на замовлення 16000 шт:
термін постачання 21-31 дні (днів)
Кількість Ціна
4000+29.30 грн
8000+27.20 грн
Мінімальне замовлення: 4000
В кошику  од. на суму  грн.
NDT455N NDT455N.pdf
NDT455N
Виробник: onsemi
Description: MOSFET N-CH 30V 11.5A SOT223-4
Packaging: Tape & Reel (TR)
Package / Case: TO-261-4, TO-261AA
Mounting Type: Surface Mount
Operating Temperature: -65°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 11.5A (Ta)
Rds On (Max) @ Id, Vgs: 15mOhm @ 11.5A, 10V
Power Dissipation (Max): 3W (Ta)
Vgs(th) (Max) @ Id: 3V @ 250µA
Supplier Device Package: SOT-223-4
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): 20V
Drain to Source Voltage (Vdss): 30 V
Gate Charge (Qg) (Max) @ Vgs: 61 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 1220 pF @ 15 V
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NDT3055 ndt3055-d.pdf
NDT3055
Виробник: onsemi
Description: MOSFET N-CH 60V 4A SOT-223-4
Packaging: Tape & Reel (TR)
Package / Case: TO-261-4, TO-261AA
Mounting Type: Surface Mount
Operating Temperature: -65°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 4A (Ta)
Rds On (Max) @ Id, Vgs: 100mOhm @ 4A, 10V
Power Dissipation (Max): 3W (Ta)
Vgs(th) (Max) @ Id: 4V @ 250µA
Supplier Device Package: SOT-223-4
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 60 V
Gate Charge (Qg) (Max) @ Vgs: 15 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 250 pF @ 30 V
на замовлення 4000 шт:
термін постачання 21-31 дні (днів)
Кількість Ціна
4000+26.21 грн
Мінімальне замовлення: 4000
В кошику  од. на суму  грн.
NDT3055L ndt3055l-d.pdf
NDT3055L
Виробник: onsemi
Description: MOSFET N-CH 60V 4A SOT-223-4
Packaging: Tape & Reel (TR)
Package / Case: TO-261-4, TO-261AA
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 155°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 4A (Ta)
Rds On (Max) @ Id, Vgs: 100mOhm @ 4A, 10V
Power Dissipation (Max): 3W (Ta)
Vgs(th) (Max) @ Id: 2V @ 250µA
Supplier Device Package: SOT-223-4
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 60 V
Gate Charge (Qg) (Max) @ Vgs: 20 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 345 pF @ 25 V
на замовлення 16000 шт:
термін постачання 21-31 дні (днів)
Кількість Ціна
4000+28.69 грн
8000+27.07 грн
Мінімальне замовлення: 4000
В кошику  од. на суму  грн.
NDT456P ndt456p-d.pdf
NDT456P
Виробник: onsemi
Description: MOSFET P-CH 30V 7.5A SOT-223-4
Packaging: Tape & Reel (TR)
Package / Case: TO-261-4, TO-261AA
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 155°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: P-Channel
Current - Continuous Drain (Id) @ 25°C: 7.5A (Ta)
Rds On (Max) @ Id, Vgs: 30mOhm @ 7.5A, 10V
Power Dissipation (Max): 3W (Ta)
Vgs(th) (Max) @ Id: 3V @ 250µA
Supplier Device Package: SOT-223-4
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 30 V
Gate Charge (Qg) (Max) @ Vgs: 67 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 1440 pF @ 15 V
на замовлення 16000 шт:
термін постачання 21-31 дні (днів)
Кількість Ціна
4000+39.92 грн
8000+35.30 грн
Мінімальне замовлення: 4000
В кошику  од. на суму  грн.
NDT2955 ndt2955-d.pdf
NDT2955
Виробник: onsemi
Description: MOSFET P-CH 60V 2.5A SOT-223-4
Packaging: Tape & Reel (TR)
Package / Case: TO-261-4, TO-261AA
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: P-Channel
Current - Continuous Drain (Id) @ 25°C: 2.5A (Ta)
Rds On (Max) @ Id, Vgs: 300mOhm @ 2.5A, 10V
Power Dissipation (Max): 3W (Ta)
Vgs(th) (Max) @ Id: 4V @ 250µA
Supplier Device Package: SOT-223-4
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 60 V
Gate Charge (Qg) (Max) @ Vgs: 15 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 601 pF @ 30 V
на замовлення 80000 шт:
термін постачання 21-31 дні (днів)
Кількість Ціна
4000+16.95 грн
8000+15.61 грн
12000+15.43 грн
20000+13.99 грн
Мінімальне замовлення: 4000
В кошику  од. на суму  грн.
NDS8410 NDS8410.pdf
NDS8410
Виробник: onsemi
Description: MOSFET N-CH 30V 10A 8SOIC
Packaging: Tape & Reel (TR)
Package / Case: 8-SOIC (0.154", 3.90mm Width)
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 10A (Ta)
Rds On (Max) @ Id, Vgs: 15mOhm @ 10A, 10V
Power Dissipation (Max): 2.5W (Ta)
Vgs(th) (Max) @ Id: 1.5V @ 250µA
Supplier Device Package: 8-SOIC
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): 20V
Drain to Source Voltage (Vdss): 30 V
Gate Charge (Qg) (Max) @ Vgs: 60 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 1350 pF @ 15 V
товару немає в наявності
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NDS9410A NDS9410A.pdf
NDS9410A
Виробник: onsemi
Description: MOSFET N-CH 30V 7.3A 8SOIC
Packaging: Tape & Reel (TR)
Package / Case: 8-SOIC (0.154", 3.90mm Width)
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 7.3A (Ta)
Rds On (Max) @ Id, Vgs: 28mOhm @ 7.3A, 10V
Power Dissipation (Max): 2.5W (Ta)
Vgs(th) (Max) @ Id: 3V @ 250µA
Supplier Device Package: 8-SOIC
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 30 V
Gate Charge (Qg) (Max) @ Vgs: 22 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 830 pF @ 15 V
товару немає в наявності
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NDS9936 NDS9936.pdf
NDS9936
Виробник: onsemi
Description: MOSFET 2N-CH 30V 5A 8-SOIC
товару немає в наявності
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NDS9945 nds9945-d.pdf
NDS9945
Виробник: onsemi
Description: MOSFET 2N-CH 60V 3.5A 8SOIC
Packaging: Tape & Reel (TR)
Package / Case: 8-SOIC (0.154", 3.90mm Width)
Mounting Type: Surface Mount
Configuration: 2 N-Channel (Dual)
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
Power - Max: 900mW
Drain to Source Voltage (Vdss): 60V
Current - Continuous Drain (Id) @ 25°C: 3.5A
Input Capacitance (Ciss) (Max) @ Vds: 345pF @ 25V
Rds On (Max) @ Id, Vgs: 100mOhm @ 3.5A, 10V
Gate Charge (Qg) (Max) @ Vgs: 30nC @ 10V
FET Feature: Logic Level Gate
Vgs(th) (Max) @ Id: 3V @ 250µA
Supplier Device Package: 8-SOIC
Part Status: Active
на замовлення 2500 шт:
термін постачання 21-31 дні (днів)
Кількість Ціна
2500+58.79 грн
Мінімальне замовлення: 2500
В кошику  од. на суму  грн.
NDS9956A NDS9956A.pdf
NDS9956A
Виробник: onsemi
Description: MOSFET 2N-CH 30V 3.7A 8SOIC
Packaging: Tape & Reel (TR)
Package / Case: 8-SOIC (0.154", 3.90mm Width)
Mounting Type: Surface Mount
Configuration: 2 N-Channel (Dual)
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
Power - Max: 900mW
Drain to Source Voltage (Vdss): 30V
Current - Continuous Drain (Id) @ 25°C: 3.7A
Input Capacitance (Ciss) (Max) @ Vds: 320pF @ 10V
Rds On (Max) @ Id, Vgs: 80mOhm @ 2.2A, 10V
Gate Charge (Qg) (Max) @ Vgs: 27nC @ 10V
FET Feature: Logic Level Gate
Vgs(th) (Max) @ Id: 2.8V @ 250µA
Supplier Device Package: 8-SOIC
товару немає в наявності
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NDS9959 NDS9959.pdf
NDS9959
Виробник: onsemi
Description: MOSFET 2N-CH 50V 2A 8-SOIC
товару немає в наявності
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NDS8434 NDS8434-D.PDF
NDS8434
Виробник: onsemi
Description: MOSFET P-CH 20V 6.5A 8SOIC
Packaging: Tape & Reel (TR)
Package / Case: 8-SOIC (0.154", 3.90mm Width)
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: P-Channel
Current - Continuous Drain (Id) @ 25°C: 6.5A (Ta)
Rds On (Max) @ Id, Vgs: 35mOhm @ 6.5A, 4.5V
Power Dissipation (Max): 2.5W (Ta)
Vgs(th) (Max) @ Id: 1V @ 250µA
Supplier Device Package: 8-SOIC
Drive Voltage (Max Rds On, Min Rds On): 2.7V, 4.5V
Vgs (Max): ±8V
Drain to Source Voltage (Vdss): 20 V
Gate Charge (Qg) (Max) @ Vgs: 80 nC @ 4.5 V
Input Capacitance (Ciss) (Max) @ Vds: 2330 pF @ 10 V
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NDS9407 nds9407-d.pdf
NDS9407
Виробник: onsemi
Description: MOSFET P-CH 60V 3A 8SOIC
Packaging: Tape & Reel (TR)
Package / Case: 8-SOIC (0.154", 3.90mm Width)
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: P-Channel
Current - Continuous Drain (Id) @ 25°C: 3A (Ta)
Rds On (Max) @ Id, Vgs: 150mOhm @ 3A, 10V
Power Dissipation (Max): 2.5W (Ta)
Vgs(th) (Max) @ Id: 3V @ 250µA
Supplier Device Package: 8-SOIC
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 60 V
Gate Charge (Qg) (Max) @ Vgs: 22 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 732 pF @ 30 V
на замовлення 54500 шт:
термін постачання 21-31 дні (днів)
Кількість Ціна
2500+20.76 грн
5000+18.43 грн
7500+17.89 грн
12500+15.45 грн
Мінімальне замовлення: 2500
В кошику  од. на суму  грн.
NDS9430 NDS9430.pdf
NDS9430
Виробник: onsemi
Description: MOSFET P-CH 30V 5.3A 8SOIC
Packaging: Tape & Reel (TR)
Package / Case: 8-SOIC (0.154", 3.90mm Width)
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: P-Channel
Current - Continuous Drain (Id) @ 25°C: 5.3A (Ta)
Rds On (Max) @ Id, Vgs: 60mOhm @ 5.3A, 10V
Power Dissipation (Max): 2.5W (Ta)
Vgs(th) (Max) @ Id: 3V @ 250µA
Supplier Device Package: 8-SOIC
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 30 V
Gate Charge (Qg) (Max) @ Vgs: 14 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 528 pF @ 15 V
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NDS9435A NDS9435A.pdf
NDS9435A
Виробник: onsemi
Description: MOSFET P-CH 30V 5.3A 8SOIC
Packaging: Tape & Reel (TR)
Package / Case: 8-SOIC (0.154", 3.90mm Width)
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: P-Channel
Current - Continuous Drain (Id) @ 25°C: 5.3A (Ta)
Rds On (Max) @ Id, Vgs: 50mOhm @ 5.3A, 10V
Power Dissipation (Max): 2.5W (Ta)
Vgs(th) (Max) @ Id: 3V @ 250µA
Supplier Device Package: 8-SOIC
Part Status: Obsolete
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±25V
Drain to Source Voltage (Vdss): 30 V
Gate Charge (Qg) (Max) @ Vgs: 14 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 528 pF @ 15 V
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NDS9948 nds9948-d.pdf
NDS9948
Виробник: onsemi
Description: MOSFET 2P-CH 60V 2.3A 8SOIC
Packaging: Tape & Reel (TR)
Package / Case: 8-SOIC (0.154", 3.90mm Width)
Mounting Type: Surface Mount
Configuration: 2 P-Channel (Dual)
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
Power - Max: 900mW
Drain to Source Voltage (Vdss): 60V
Current - Continuous Drain (Id) @ 25°C: 2.3A
Input Capacitance (Ciss) (Max) @ Vds: 394pF @ 30V
Rds On (Max) @ Id, Vgs: 250mOhm @ 2.3A, 10V
Gate Charge (Qg) (Max) @ Vgs: 13nC @ 10V
FET Feature: Logic Level Gate
Vgs(th) (Max) @ Id: 3V @ 250µA
Supplier Device Package: 8-SOIC
Part Status: Active
на замовлення 7500 шт:
термін постачання 21-31 дні (днів)
Кількість Ціна
2500+19.49 грн
5000+17.92 грн
7500+17.14 грн
Мінімальне замовлення: 2500
В кошику  од. на суму  грн.
NDS9953A NDS9953A.pdf
NDS9953A
Виробник: onsemi
Description: MOSFET 2P-CH 30V 2.9A 8SOIC
Packaging: Tape & Reel (TR)
Package / Case: 8-SOIC (0.154", 3.90mm Width)
Mounting Type: Surface Mount
Configuration: 2 P-Channel (Dual)
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
Power - Max: 900mW
Drain to Source Voltage (Vdss): 30V
Current - Continuous Drain (Id) @ 25°C: 2.9A
Input Capacitance (Ciss) (Max) @ Vds: 350pF @ 10V
Rds On (Max) @ Id, Vgs: 130mOhm @ 1A, 10V
Gate Charge (Qg) (Max) @ Vgs: 25nC @ 10V
FET Feature: Logic Level Gate
Vgs(th) (Max) @ Id: 2.8V @ 250µA
Supplier Device Package: 8-SOIC
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NDS8958 NDS8958.pdf
NDS8958
Виробник: onsemi
Description: MOSFET N/P-CH 30V 5.3A/4A 8SOIC
Packaging: Tape & Reel (TR)
Package / Case: 8-SOIC (0.154", 3.90mm Width)
Mounting Type: Surface Mount
Configuration: N and P-Channel
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
Power - Max: 900mW
Drain to Source Voltage (Vdss): 30V
Current - Continuous Drain (Id) @ 25°C: 5.3A, 4A
Input Capacitance (Ciss) (Max) @ Vds: 720pF @ 15V
Rds On (Max) @ Id, Vgs: 35mOhm @ 5.3A, 10V
Gate Charge (Qg) (Max) @ Vgs: 30nC @ 10V
FET Feature: Logic Level Gate
Vgs(th) (Max) @ Id: 2.8V @ 250µA
Supplier Device Package: 8-SOIC
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NDS9943
NDS9943
Виробник: onsemi
Description: MOSFET N/P-CH 20V 3A/2.8A 8SOIC
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NDS9958 NDS9958.pdf
NDS9958
Виробник: onsemi
Description: MOSFET N/P-CH 20V 3.5A 8SOIC
Packaging: Tape & Reel (TR)
Package / Case: 8-SOIC (0.154", 3.90mm Width)
Mounting Type: Surface Mount
Configuration: N and P-Channel
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
Power - Max: 900mW
Drain to Source Voltage (Vdss): 20V
Current - Continuous Drain (Id) @ 25°C: 3.5A
Input Capacitance (Ciss) (Max) @ Vds: 525pF @ 10V
Rds On (Max) @ Id, Vgs: 100mOhm @ 3.5A, 10V
Gate Charge (Qg) (Max) @ Vgs: 30nC @ 10V
FET Feature: Logic Level Gate
Vgs(th) (Max) @ Id: 3V @ 250µA
Supplier Device Package: 8-SOIC
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NDS8852H NDS8852H.pdf
NDS8852H
Виробник: onsemi
Description: MOSFET N/P-CH 30V 4.3A 8SOIC
Packaging: Tape & Reel (TR)
Package / Case: 8-SOIC (0.154", 3.90mm Width)
Mounting Type: Surface Mount
Configuration: N and P-Channel
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
Power - Max: 1W
Drain to Source Voltage (Vdss): 30V
Current - Continuous Drain (Id) @ 25°C: 4.3A, 3.4A
Input Capacitance (Ciss) (Max) @ Vds: 300pF @ 15V
Rds On (Max) @ Id, Vgs: 80mOhm @ 3.4A, 10V
Gate Charge (Qg) (Max) @ Vgs: 25nC @ 10V
FET Feature: Logic Level Gate
Vgs(th) (Max) @ Id: 2.8V @ 250µA
Supplier Device Package: 8-SOIC
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