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74ACT14MTCX 74ACT14MTCX ONSEMI 74AC14-D.PDF Category: Gates, inverters
Description: IC: digital; NOT; Ch: 6; IN: 1; SMD; TSSOP14; 4.5÷5.5VDC; -40÷85°C
Supply voltage: 4.5...5.5V DC
Mounting: SMD
Operating temperature: -40...85°C
Number of channels: hex; 6
Kind of gate: NOT
Kind of package: reel; tape
Kind of input: with Schmitt trigger
Number of inputs: 1
Family: ACT
Type of integrated circuit: digital
Case: TSSOP14
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NCP59301DS30R4G ONSEMI NCP59300-D.PDF Category: LDO fixed voltage regulators
Description: IC: voltage regulator; LDO,linear,fixed; 3V; 3A; D2PAK-5; SMD; Ch: 1
Case: D2PAK-5
Mounting: SMD
Manufacturer series: NCP59300
Operating temperature: -40...125°C
Input voltage: 2.24...13.5V
Output voltage: 3V
Output current: 3A
Voltage drop: 0.5V
Tolerance: ±2.5%
Number of channels: 1
Kind of voltage regulator: fixed; LDO; linear
Type of integrated circuit: voltage regulator
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NCP59301DS28R4G ONSEMI NCP59300-D.PDF Category: LDO fixed voltage regulators
Description: IC: voltage regulator; LDO,linear,fixed; 2.8V; 3A; D2PAK-5; SMD
Case: D2PAK-5
Mounting: SMD
Manufacturer series: NCP59300
Operating temperature: -40...125°C
Input voltage: 2.24...13.5V
Output voltage: 2.8V
Output current: 3A
Voltage drop: 0.5V
Tolerance: ±2.5%
Number of channels: 1
Kind of voltage regulator: fixed; LDO; linear
Type of integrated circuit: voltage regulator
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MC74HC4538ADG MC74HC4538ADG ONSEMI MC74HC4538A.PDF Category: Multivibrators
Description: IC: digital; monostable,multivibrator; Ch: 2; 2÷6VDC; SMD; SOIC16
Type of integrated circuit: digital
Kind of integrated circuit: monostable; multivibrator
Number of channels: 2
Supply voltage: 2...6V DC
Mounting: SMD
Case: SOIC16
Manufacturer series: HC
Operating temperature: -55...125°C
Kind of package: tube
Quiescent current: 800µA
на замовлення 1119 шт:
термін постачання 21-30 дні (днів)
20+22.80 грн
24+19.94 грн
96+19.86 грн
Мінімальне замовлення: 20
В кошику  од. на суму  грн.
MC74HC4538ADR2G MC74HC4538ADR2G ONSEMI MC74HC4538A-D.pdf Category: Multivibrators
Description: IC: digital; monostable,multivibrator; Ch: 2; IN: 3; CMOS; 2÷6VDC
Type of integrated circuit: digital
Kind of integrated circuit: monostable; multivibrator
Number of channels: 2
Number of inputs: 3
Technology: CMOS
Supply voltage: 2...6V DC
Mounting: SMD
Case: SOIC16
Manufacturer series: HC
Family: HC
Operating temperature: -55...125°C
Kind of package: reel; tape
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MC74HC4538ADTR2G ONSEMI MC74HC4538A-D.pdf Category: Multivibrators
Description: IC: digital; monostable,multivibrator; Ch: 2; IN: 3; CMOS; 2÷6VDC
Type of integrated circuit: digital
Kind of integrated circuit: monostable; multivibrator
Number of channels: 2
Number of inputs: 3
Technology: CMOS
Supply voltage: 2...6V DC
Mounting: SMD
Case: TSSOP16
Manufacturer series: HC
Family: HC
Operating temperature: -55...125°C
Kind of package: reel; tape
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NLV74HC4538ADR2G NLV74HC4538ADR2G ONSEMI MC74HC4538A-D.pdf Category: Multivibrators
Description: IC: digital; monostable,multivibrator; Ch: 2; IN: 3; CMOS; 2÷6VDC
Type of integrated circuit: digital
Kind of integrated circuit: monostable; multivibrator
Number of channels: 2
Number of inputs: 3
Technology: CMOS
Supply voltage: 2...6V DC
Mounting: SMD
Case: SOIC16
Manufacturer series: HC
Family: HC
Operating temperature: -55...125°C
Kind of package: reel; tape
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FDS4501h FDS4501h ONSEMI FAIRS34628-1.pdf?t.download=true&u=5oefqw fds4501h-d.pdf Category: Multi channel transistors
Description: Transistor: N/P-MOSFET; unipolar; 30/-20V; 9.3/-5.6A; 2.5W; SO8
Power dissipation: 2.5W
Drain current: 9.3/-5.6A
Gate-source voltage: ±20/±8V
Drain-source voltage: 30/-20V
Kind of package: reel; tape
On-state resistance: 80/29mΩ
Technology: PowerTrench®
Type of transistor: N/P-MOSFET
Polarisation: unipolar
Kind of channel: enhancement
Case: SO8
Gate charge: 21/27nC
Mounting: SMD
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FFSP20120A ONSEMI ffsp20120a-d.pdf Category: THT Schottky diodes
Description: Diode: Schottky rectifying; SiC; THT; 1.2kV; 20A; TO220-2; tube
Type of diode: Schottky rectifying
Technology: SiC
Mounting: THT
Max. off-state voltage: 1.2kV
Load current: 20A
Semiconductor structure: single diode
Case: TO220-2
Max. forward voltage: 1.75V
Kind of package: tube
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NCP152MX280120TCG ONSEMI ncp152-d.pdf Category: LDO fixed voltage regulators
Description: IC: voltage regulator; LDO,linear,fixed; 1.2V,2.8V; 150mA; XDFN6
Type of integrated circuit: voltage regulator
Kind of voltage regulator: fixed; LDO; linear
Output voltage: 1.2V; 2.8V
Output current: 0.15A
Case: XDFN6
Mounting: SMD
Manufacturer series: NCP152
Operating temperature: -40...85°C
Tolerance: ±2%
Number of channels: 2
Input voltage: 1.9...5.25V
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FQT7N10LTF FQT7N10LTF ONSEMI FQT7N10L.pdf Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 100V; 1.36A; 2W; SOT223
Type of transistor: N-MOSFET
Technology: QFET®
Polarisation: unipolar
Drain-source voltage: 100V
Drain current: 1.36A
Power dissipation: 2W
Case: SOT223
Gate-source voltage: ±20V
On-state resistance: 0.38Ω
Mounting: SMD
Gate charge: 6nC
Kind of package: reel; tape
Kind of channel: enhancement
на замовлення 3694 шт:
термін постачання 21-30 дні (днів)
8+63.00 грн
11+40.21 грн
25+34.61 грн
50+30.98 грн
100+27.69 грн
250+23.90 грн
500+23.73 грн
Мінімальне замовлення: 8
В кошику  од. на суму  грн.
BC847CWT3G BC847CWT3G ONSEMI bc846awt1-d.pdf Category: NPN SMD transistors
Description: Transistor: NPN; bipolar; 45V; 0.1A; 0.15W; SC70,SOT323
Type of transistor: NPN
Polarisation: bipolar
Collector-emitter voltage: 45V
Collector current: 0.1A
Power dissipation: 0.15W
Case: SC70; SOT323
Current gain: 420...800
Mounting: SMD
Kind of package: reel; tape
Frequency: 100MHz
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SBC847CWT1G SBC847CWT1G ONSEMI bc846awt1-d.pdf Category: NPN SMD transistors
Description: Transistor: NPN; bipolar; 45V; 0.1A; 0.15W; SC70,SOT323
Type of transistor: NPN
Polarisation: bipolar
Collector-emitter voltage: 45V
Collector current: 0.1A
Power dissipation: 0.15W
Case: SC70; SOT323
Current gain: 420...800
Mounting: SMD
Kind of package: reel; tape
Frequency: 100MHz
Application: automotive industry
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SBC847CWT3G SBC847CWT3G ONSEMI bc846awt1-d.pdf Category: NPN SMD transistors
Description: Transistor: NPN; bipolar; 45V; 0.1A; 0.15W; SC70,SOT323
Type of transistor: NPN
Polarisation: bipolar
Collector-emitter voltage: 45V
Collector current: 0.1A
Power dissipation: 0.15W
Case: SC70; SOT323
Current gain: 420...800
Mounting: SMD
Kind of package: reel; tape
Frequency: 100MHz
Application: automotive industry
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FDS6679AZ FDS6679AZ ONSEMI FDS6679AZ.pdf Category: SMD P channel transistors
Description: Transistor: P-MOSFET; unipolar; -30V; -13A; 2.5W; SO8
Type of transistor: P-MOSFET
Technology: PowerTrench®
Polarisation: unipolar
Drain-source voltage: -30V
Drain current: -13A
Power dissipation: 2.5W
Case: SO8
Gate-source voltage: ±25V
On-state resistance: 14.8mΩ
Mounting: SMD
Gate charge: 96nC
Kind of package: reel; tape
Kind of channel: enhancement
на замовлення 262 шт:
термін постачання 21-30 дні (днів)
5+90.51 грн
10+61.39 грн
25+50.59 грн
50+43.59 грн
100+37.90 грн
Мінімальне замовлення: 5
В кошику  од. на суму  грн.
FDN352AP FDN352AP ONSEMI FDN352AP.pdf Category: SMD P channel transistors
Description: Transistor: P-MOSFET; unipolar; -30V; -1.3A; 0.5W; SuperSOT-3
Type of transistor: P-MOSFET
Polarisation: unipolar
Drain-source voltage: -30V
Drain current: -1.3A
Power dissipation: 0.5W
Case: SuperSOT-3
Gate-source voltage: ±25V
On-state resistance: 0.4Ω
Mounting: SMD
Gate charge: 1.9nC
Kind of package: reel; tape
Kind of channel: enhancement
Technology: PowerTrench®
Features of semiconductor devices: logic level
на замовлення 2960 шт:
термін постачання 21-30 дні (днів)
12+37.27 грн
17+25.71 грн
50+19.45 грн
100+17.22 грн
250+14.58 грн
500+12.94 грн
1000+11.45 грн
Мінімальне замовлення: 12
В кошику  од. на суму  грн.
NDS352AP NDS352AP ONSEMI NDS352AP.pdf Category: SMD P channel transistors
Description: Transistor: P-MOSFET; unipolar; -30V; -0.9A; 0.5W; SuperSOT-3
Type of transistor: P-MOSFET
Polarisation: unipolar
Drain-source voltage: -30V
Drain current: -0.9A
Power dissipation: 0.5W
Case: SuperSOT-3
Gate-source voltage: ±20V
On-state resistance: 0.7Ω
Mounting: SMD
Gate charge: 3nC
Kind of package: reel; tape
Kind of channel: enhancement
Features of semiconductor devices: logic level
на замовлення 314 шт:
термін постачання 21-30 дні (днів)
13+36.38 грн
17+25.38 грн
50+19.20 грн
100+17.06 грн
250+14.58 грн
Мінімальне замовлення: 13
В кошику  од. на суму  грн.
NTMFS008N12MCT1G ONSEMI ntmfs008n12mc-d.pdf Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 120V; 79A; Idm: 352A; 40W; SO8
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 120V
Drain current: 79A
Pulsed drain current: 352A
Power dissipation: 40W
Case: SO8
Gate-source voltage: ±20V
On-state resistance: 8mΩ
Mounting: SMD
Gate charge: 33nC
Kind of package: reel; tape
Kind of channel: enhancement
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NVMFS5C460NT1G ONSEMI nvmfs5c460n-d.pdf Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 40V; 71A; Idm: 352A; 25W; DFN5
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 40V
Drain current: 71A
Pulsed drain current: 352A
Power dissipation: 25W
Case: DFN5
Gate-source voltage: ±20V
On-state resistance: 5.3mΩ
Mounting: SMD
Gate charge: 16nC
Kind of package: reel; tape
Kind of channel: enhancement
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NVMFS5C460NWFT1G ONSEMI nvmfs5c460n-d.pdf Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 40V; 71A; Idm: 352A; 25W; DFN5
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 40V
Drain current: 71A
Pulsed drain current: 352A
Power dissipation: 25W
Case: DFN5
Gate-source voltage: ±20V
On-state resistance: 5.3mΩ
Mounting: SMD
Gate charge: 16nC
Kind of package: reel; tape
Kind of channel: enhancement
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NVMYS5D3N04CTWG ONSEMI nvmys5d3n04c-d.pdf Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 40V; 71A; Idm: 352A; 25W; LFPAK56
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 40V
Drain current: 71A
Pulsed drain current: 352A
Power dissipation: 25W
Case: LFPAK56
Gate-source voltage: ±20V
On-state resistance: 5.3mΩ
Mounting: SMD
Gate charge: 16nC
Kind of package: reel; tape
Kind of channel: enhancement
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ECH8695R-TL-W ECH8695R-TL-W ONSEMI ech8695r-d.pdf Category: Multi channel transistors
Description: Transistor: N-MOSFET x2; unipolar; 24V; 11A; Idm: 60A; 1.4W; ECH8
Application: charging control
Semiconductor structure: common drain
Case: ECH8
Kind of channel: enhancement
Version: ESD
Mounting: SMD
Type of transistor: N-MOSFET x2
Polarisation: unipolar
Kind of package: reel; tape
Gate charge: 10nC
On-state resistance: 9.1mΩ
Power dissipation: 1.4W
Drain current: 11A
Gate-source voltage: ±12.5V
Drain-source voltage: 24V
Pulsed drain current: 60A
на замовлення 2062 шт:
термін постачання 21-30 дні (днів)
9+55.02 грн
10+41.36 грн
100+28.92 грн
500+23.57 грн
Мінімальне замовлення: 9
В кошику  од. на суму  грн.
NSR0620P2T5G NSR0620P2T5G ONSEMI NSR0620P2.PDF Category: SMD Schottky diodes
Description: Diode: Schottky switching; SOD923; SMD; 20V; 0.5A; reel,tape
Type of diode: Schottky switching
Case: SOD923
Mounting: SMD
Max. off-state voltage: 20V
Load current: 0.5A
Semiconductor structure: single diode
Max. forward voltage: 0.52V
Max. forward impulse current: 1A
Kind of package: reel; tape
на замовлення 2673 шт:
термін постачання 21-30 дні (днів)
39+11.54 грн
51+8.16 грн
70+5.93 грн
100+5.44 грн
Мінімальне замовлення: 39
В кошику  од. на суму  грн.
SZESD9X5.0ST5G ONSEMI esd9x3.3st5g-d.pdf Category: Unidirectional TVS SMD diodes
Description: Diode: TVS; 6.2V; unidirectional; SOD923F; reel,tape
Type of diode: TVS
Max. off-state voltage: 5V
Breakdown voltage: 6.2V
Semiconductor structure: unidirectional
Case: SOD923F
Mounting: SMD
Kind of package: reel; tape
Application: automotive industry
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1SMB5956BT3G 1SMB5956BT3G ONSEMI 1SMB59xxBT3G.PDF Category: SMD Zener diodes
Description: Diode: Zener; 3W; 200V; SMD; reel,tape; SMB; single diode
Type of diode: Zener
Power dissipation: 3W
Zener voltage: 200V
Kind of package: reel; tape
Case: SMB
Mounting: SMD
Tolerance: ±5%
Semiconductor structure: single diode
Manufacturer series: 1SMB59xxBT3G
на замовлення 4289 шт:
термін постачання 21-30 дні (днів)
30+15.08 грн
42+9.89 грн
51+8.16 грн
62+6.67 грн
Мінімальне замовлення: 30
В кошику  од. на суму  грн.
DF02S DF02S ONSEMI DF02S.pdf Category: SMD/THT sing. phase diode bridge rectif.
Description: Bridge rectifier: single-phase; 200V; If: 1.5A; Ifsm: 50A; SDIP 4L
Kind of package: reel; tape
Case: SDIP 4L
Load current: 1.5A
Max. forward impulse current: 50A
Max. off-state voltage: 200V
Type of bridge rectifier: single-phase
Electrical mounting: SMT
на замовлення 2904 шт:
термін постачання 21-30 дні (днів)
9+49.69 грн
16+26.94 грн
50+22.49 грн
100+20.76 грн
250+18.62 грн
500+17.06 грн
1000+16.81 грн
Мінімальне замовлення: 9
В кошику  од. на суму  грн.
1N5956BRLG 1N5956BRLG ONSEMI 1N59xxB.pdf Category: THT Zener diodes
Description: Diode: Zener; 3W; 200V; reel,tape; CASE59; single diode; 1uA
Type of diode: Zener
Power dissipation: 3W
Zener voltage: 200V
Kind of package: reel; tape
Case: CASE59
Mounting: THT
Tolerance: ±5%
Semiconductor structure: single diode
Manufacturer series: 1N59xxB
Leakage current: 1µA
на замовлення 4964 шт:
термін постачання 21-30 дні (днів)
42+10.65 грн
50+8.82 грн
100+8.32 грн
250+8.07 грн
Мінімальне замовлення: 42
В кошику  од. на суму  грн.
MC74AC125DTR2G MC74AC125DTR2G ONSEMI mc74ac125-d.pdf Category: Buffers, transceivers, drivers
Description: IC: digital; buffer,non-inverting; Ch: 4; CMOS; SMD; TSSOP14; AC
Type of integrated circuit: digital
Kind of integrated circuit: buffer; non-inverting
Number of channels: 4
Technology: CMOS
Mounting: SMD
Case: TSSOP14
Manufacturer series: AC
Operating temperature: -40...85°C
Kind of output: 3-state
Supply voltage: 2...6V DC
на замовлення 731 шт:
термін постачання 21-30 дні (днів)
13+35.49 грн
17+25.71 грн
25+22.58 грн
100+18.46 грн
250+18.04 грн
Мінімальне замовлення: 13
В кошику  од. на суму  грн.
MC74AC125DR2G MC74AC125DR2G ONSEMI mc74ac125-d.pdf Category: Buffers, transceivers, drivers
Description: IC: digital; buffer,non-inverting; Ch: 4; CMOS; SMD; SO14; AC; 2÷6VDC
Type of integrated circuit: digital
Kind of integrated circuit: buffer; non-inverting
Number of channels: 4
Technology: CMOS
Mounting: SMD
Case: SO14
Manufacturer series: AC
Operating temperature: -40...85°C
Kind of output: 3-state
Supply voltage: 2...6V DC
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MC74ACT125DR2G MC74ACT125DR2G ONSEMI mc74ac125-d.pdf Category: Buffers, transceivers, drivers
Description: IC: digital; buffer,non-inverting; Ch: 4; SMD; SO14; ACT; -40÷85°C
Type of integrated circuit: digital
Kind of integrated circuit: buffer; non-inverting
Number of channels: 4
Mounting: SMD
Case: SO14
Manufacturer series: ACT
Operating temperature: -40...85°C
Kind of output: 3-state
Supply voltage: 2...6V DC
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MC74VHC125DG MC74VHC125DG ONSEMI MC74VHC125-D.pdf Category: Buffers, transceivers, drivers
Description: IC: digital; 3-state,bus buffer; Ch: 4; IN: 2; CMOS; SMD; SOIC14; VHC
Type of integrated circuit: digital
Kind of integrated circuit: 3-state; bus buffer
Number of channels: 4
Technology: CMOS
Mounting: SMD
Case: SOIC14
Supply voltage: 2...5.5V DC
Family: VHC
Kind of package: tube
Operating temperature: -55...125°C
Number of inputs: 2
Kind of output: 3-state
Manufacturer series: VHC
на замовлення 145 шт:
термін постачання 21-30 дні (днів)
9+50.58 грн
12+35.68 грн
55+29.75 грн
110+27.44 грн
Мінімальне замовлення: 9
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74VHC125MTCX 74VHC125MTCX ONSEMI 74VHC125-D.PDF description Category: Buffers, transceivers, drivers
Description: IC: digital; buffer,non-inverting; Ch: 4; CMOS; SMD; TSSOP14; VHC
Type of integrated circuit: digital
Kind of integrated circuit: buffer; non-inverting
Technology: CMOS
Kind of package: reel; tape
Mounting: SMD
Operating temperature: -40...85°C
Quiescent current: 40µA
Supply voltage: 2...5.5V DC
Number of channels: 4
Kind of output: 3-state
Manufacturer series: VHC
Case: TSSOP14
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FQP17P06 FQP17P06 ONSEMI FQP17P06.pdf Category: THT P channel transistors
Description: Transistor: P-MOSFET; unipolar; -60V; -12A; 79W; TO220AB
Technology: QFET®
Mounting: THT
Case: TO220AB
Kind of package: tube
Drain-source voltage: -60V
Drain current: -12A
Gate charge: 27nC
Polarisation: unipolar
On-state resistance: 0.12Ω
Type of transistor: P-MOSFET
Kind of channel: enhancement
Gate-source voltage: ±25V
Power dissipation: 79W
на замовлення 80 шт:
термін постачання 21-30 дні (днів)
6+84.30 грн
Мінімальне замовлення: 6
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NC7SP17P5X NC7SP17P5X ONSEMI NC7SP17.pdf Category: Buffers, transceivers, drivers
Description: IC: digital; buffer,non-inverting; Ch: 1; CMOS; SMD; SC70-5; 0.9uA
Type of integrated circuit: digital
Kind of integrated circuit: buffer; non-inverting
Number of channels: 1
Technology: CMOS
Mounting: SMD
Case: SC70-5
Operating temperature: -40...85°C
Kind of package: reel; tape
Supply voltage: 0.9...3.6V DC
Quiescent current: 0.9µA
Kind of input: with Schmitt trigger
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MMBF5457 MMBF5457 ONSEMI 2N5457-59%2C%20MMBF5457-59.pdf Category: SMD N channel transistors
Description: Transistor: N-JFET; unipolar; 3mA; 0.35W; SOT23; Igt: 10mA
Type of transistor: N-JFET
Polarisation: unipolar
Drain current: 3mA
Power dissipation: 0.35W
Case: SOT23
Gate-source voltage: -25V
Mounting: SMD
Kind of package: reel; tape
Gate current: 10mA
на замовлення 1773 шт:
термін постачання 21-30 дні (днів)
28+15.97 грн
33+12.77 грн
100+11.78 грн
250+11.21 грн
500+10.13 грн
1000+9.72 грн
Мінімальне замовлення: 28
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MC74HC73ADG MC74HC73ADG ONSEMI MC74HC73-D.pdf Category: Flip-Flops
Description: IC: digital; JK flip-flop; Ch: 2; CMOS; HC; SMD; SO14; tube
Type of integrated circuit: digital
Kind of integrated circuit: JK flip-flop
Number of channels: 2
Technology: CMOS
Manufacturer series: HC
Mounting: SMD
Case: SO14
Operating temperature: -55...125°C
Supply voltage: 2...6V DC
Kind of package: tube
Trigger: negative-edge-triggered
на замовлення 362 шт:
термін постачання 21-30 дні (днів)
12+37.27 грн
18+23.98 грн
25+21.67 грн
55+20.10 грн
110+19.94 грн
Мінімальне замовлення: 12
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MC74HC73ADR2G MC74HC73ADR2G ONSEMI MC74HC73-D.pdf Category: Flip-Flops
Description: IC: digital; JK flip-flop; Ch: 2; CMOS; HC; SMD; SO14; reel,tape
Type of integrated circuit: digital
Kind of integrated circuit: JK flip-flop
Number of channels: 2
Technology: CMOS
Manufacturer series: HC
Mounting: SMD
Case: SO14
Operating temperature: -55...125°C
Supply voltage: 2...6V DC
Kind of package: reel; tape
Trigger: negative-edge-triggered
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MC74HC73ADTR2G MC74HC73ADTR2G ONSEMI MC74HC73-D.pdf Category: Flip-Flops
Description: IC: digital; JK flip-flop; Ch: 2; CMOS; HC; SMD; TSSOP14; reel,tape
Type of integrated circuit: digital
Kind of integrated circuit: JK flip-flop
Number of channels: 2
Technology: CMOS
Manufacturer series: HC
Mounting: SMD
Case: TSSOP14
Operating temperature: -55...125°C
Supply voltage: 2...6V DC
Kind of package: reel; tape
Trigger: negative-edge-triggered
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FJA4313OTU ONSEMI fja4313-d.pdf Category: NPN THT transistors
Description: Transistor: NPN; bipolar; 250V; 17A; 130W; TO3P
Type of transistor: NPN
Kind of package: tube
Mounting: THT
Power dissipation: 130W
Collector current: 17A
Collector-emitter voltage: 250V
Frequency: 30MHz
Case: TO3P
Polarisation: bipolar
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FDD8896 FDD8896 ONSEMI FDD,FDU8896.pdf Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 30V; 94A; 80W; DPAK
Type of transistor: N-MOSFET
Technology: PowerTrench®
Polarisation: unipolar
Drain-source voltage: 30V
Drain current: 94A
Power dissipation: 80W
Case: DPAK
Gate-source voltage: ±20V
On-state resistance: 9.2mΩ
Mounting: SMD
Gate charge: 60nC
Kind of package: reel; tape
Kind of channel: enhancement
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NTP150N65S3HF ONSEMI ntp150n65s3hf-d.pdf Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 650V; 24A; Idm: 60A; 192W; TO220-3
Type of transistor: N-MOSFET
Power dissipation: 192W
Case: TO220-3
Mounting: THT
Gate charge: 43nC
Kind of package: tube
Polarisation: unipolar
Kind of channel: enhancement
On-state resistance: 0.15Ω
Drain current: 24A
Gate-source voltage: ±30V
Pulsed drain current: 60A
Drain-source voltage: 650V
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SS33 ONSEMI SS32_SS39.pdf Category: SMD Schottky diodes
Description: Diode: Schottky rectifying; SMC; SMD; 30V; 3A; reel,tape; 2.27W
Mounting: SMD
Load current: 3A
Type of diode: Schottky rectifying
Semiconductor structure: single diode
Case: SMC
Max. forward voltage: 0.5V
Power dissipation: 2.27W
Kind of package: reel; tape
Max. off-state voltage: 30V
Max. forward impulse current: 100A
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SS32 ONSEMI SS32_SS39.pdf Category: SMD Schottky diodes
Description: Diode: Schottky rectifying; SMC; SMD; 20V; 3A; reel,tape; 2.27W
Mounting: SMD
Kind of package: reel; tape
Max. forward voltage: 0.5V
Power dissipation: 2.27W
Load current: 3A
Max. off-state voltage: 20V
Max. forward impulse current: 100A
Case: SMC
Type of diode: Schottky rectifying
Semiconductor structure: single diode
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NVMTS1D2N08H ONSEMI nvmts1d2n08h-d.pdf Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 80V; 337A; Idm: 900A; 150W; DFNW8
Type of transistor: N-MOSFET
Polarisation: unipolar
Power dissipation: 150W
Case: DFNW8
Mounting: SMD
Kind of package: reel; tape
Gate charge: 147nC
On-state resistance: 1.1mΩ
Drain-source voltage: 80V
Drain current: 337A
Pulsed drain current: 900A
Gate-source voltage: ±20V
Kind of channel: enhancement
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NTMTS1D2N08H ONSEMI ntmts1d2n08h-d.pdf Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 80V; 335A; Idm: 900A; 150W; DFNW8
Type of transistor: N-MOSFET
Polarisation: unipolar
Power dissipation: 150W
Case: DFNW8
Mounting: SMD
Kind of package: reel; tape
Gate charge: 147nC
On-state resistance: 1.1mΩ
Drain-source voltage: 80V
Drain current: 335A
Pulsed drain current: 900A
Gate-source voltage: ±20V
Kind of channel: enhancement
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NTMTS1D5N08H ONSEMI ntmts1d5n08h-d.pdf Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 80V; 255A; Idm: 900A; 83W; DFNW8
Type of transistor: N-MOSFET
Polarisation: unipolar
Power dissipation: 83W
Case: DFNW8
Mounting: SMD
Kind of package: reel; tape
Gate charge: 125nC
On-state resistance: 1.5mΩ
Drain-source voltage: 80V
Drain current: 255A
Pulsed drain current: 900A
Gate-source voltage: ±20V
Kind of channel: enhancement
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NTMTS1D6N10MCTXG ONSEMI ntmts1d6n10mc-d.pdf Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 100V; 273A; Idm: 900A; 146W; DFNW8
Type of transistor: N-MOSFET
Polarisation: unipolar
Power dissipation: 146W
Case: DFNW8
Mounting: SMD
Kind of package: reel; tape
Gate charge: 106nC
On-state resistance: 1.7mΩ
Drain-source voltage: 100V
Drain current: 273A
Pulsed drain current: 900A
Gate-source voltage: ±20V
Kind of channel: enhancement
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NVMTS1D5N08H ONSEMI nvmts1d5n08h-d.pdf Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 80V; 273A; Idm: 900A; 129W; DFNW8
Type of transistor: N-MOSFET
Polarisation: unipolar
Power dissipation: 129W
Case: DFNW8
Mounting: SMD
Kind of package: reel; tape
Gate charge: 125nC
On-state resistance: 1.4mΩ
Drain-source voltage: 80V
Drain current: 273A
Pulsed drain current: 900A
Gate-source voltage: ±20V
Kind of channel: enhancement
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NVMTS1D6N10MCTXG ONSEMI nvmts1d6n10mc-d.pdf Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 100V; 273A; Idm: 900A; 146W; DFNW8
Type of transistor: N-MOSFET
Polarisation: unipolar
Power dissipation: 146W
Case: DFNW8
Mounting: SMD
Kind of package: reel; tape
Gate charge: 106nC
On-state resistance: 1.7mΩ
Drain-source voltage: 100V
Drain current: 273A
Pulsed drain current: 900A
Gate-source voltage: ±20V
Kind of channel: enhancement
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FAN4800AUM ONSEMI fan4800cu-d.pdf Category: Integrated circuits - others
Description: IC: PMIC; PFC controller,PWM controller; SO16; -40÷105°C
Type of integrated circuit: PMIC
Kind of integrated circuit: PFC controller; PWM controller
Case: SO16
Mounting: SMD
Operating temperature: -40...105°C
Topology: boost
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FAN4800AUN ONSEMI fan4800cu-d.pdf Category: Integrated circuits - others
Description: IC: PMIC; PFC controller,PWM controller; DIP16; -40÷105°C
Type of integrated circuit: PMIC
Kind of integrated circuit: PFC controller; PWM controller
Case: DIP16
Mounting: SMD
Operating temperature: -40...105°C
Topology: boost
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MJD128T4G ONSEMI mjd128-d.pdf Category: PNP SMD Darlington transistors
Description: Transistor: PNP; bipolar; Darlington; 120V; 8A; 1.75W; DPAK
Kind of transistor: Darlington
Case: DPAK
Mounting: SMD
Type of transistor: PNP
Kind of package: reel; tape
Power dissipation: 1.75W
Collector current: 8A
Collector-emitter voltage: 120V
Polarisation: bipolar
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NJVMJD128T4G ONSEMI mjd128-d.pdf Category: PNP SMD Darlington transistors
Description: Transistor: PNP; bipolar; Darlington; 120V; 8A; 1.75W; DPAK
Application: automotive industry
Kind of transistor: Darlington
Case: DPAK
Mounting: SMD
Type of transistor: PNP
Kind of package: reel; tape
Power dissipation: 1.75W
Collector current: 8A
Collector-emitter voltage: 120V
Polarisation: bipolar
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MUN5111DW1T1G MUN5111DW1T1G ONSEMI MUN5111DW1.PDF Category: PNP SMD transistors
Description: Transistor: PNP x2; bipolar; BRT; 50V; 0.1A; 0.187W; R1: 10kΩ
Type of transistor: PNP x2
Kind of package: reel; tape
Case: SC70-6; SC88; SOT363
Mounting: SMD
Collector current: 0.1A
Power dissipation: 0.187W
Collector-emitter voltage: 50V
Base resistor: 10kΩ
Base-emitter resistor: 10kΩ
Polarisation: bipolar
Kind of transistor: BRT
на замовлення 1200 шт:
термін постачання 21-30 дні (днів)
27+16.86 грн
40+10.38 грн
100+6.25 грн
500+4.50 грн
1000+3.96 грн
Мінімальне замовлення: 27
В кошику  од. на суму  грн.
NTD2955T4G NTD2955T4G ONSEMI ntd2955-d.pdf 546ddeaeab93c794f84a448873c3157d.pdf Category: SMD P channel transistors
Description: Transistor: P-MOSFET; unipolar; -60V; -12A; Idm: -18A; 55W; DPAK
Type of transistor: P-MOSFET
Polarisation: unipolar
Drain-source voltage: -60V
Drain current: -12A
Pulsed drain current: -18A
Power dissipation: 55W
Case: DPAK
Gate-source voltage: ±20V
On-state resistance: 0.18Ω
Mounting: SMD
Gate charge: 15nC
Kind of package: reel; tape
Kind of channel: enhancement
на замовлення 240 шт:
термін постачання 21-30 дні (днів)
6+87.85 грн
10+55.78 грн
25+49.52 грн
100+41.69 грн
Мінімальне замовлення: 6
В кошику  од. на суму  грн.
NCV8716MT30TBG ONSEMI ncv8716-d.pdf Category: LDO fixed voltage regulators
Description: IC: voltage regulator; LDO,linear,fixed; 3V; 0.11A; WDFN6; SMD
Mounting: SMD
Type of integrated circuit: voltage regulator
Output current: 0.11A
Number of channels: 1
Output voltage: 3V
Kind of package: reel; tape
Application: automotive industry
Case: WDFN6
Kind of voltage regulator: fixed; LDO; linear
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MC74AC10DG MC74AC10DG ONSEMI MC74AC10-D.pdf Category: Gates, inverters
Description: IC: digital; NAND; Ch: 3; IN: 3; CMOS; SMD; SOIC14; AC; 2÷6VDC; -40÷85°C
Type of integrated circuit: digital
Kind of gate: NAND
Number of channels: 3
Number of inputs: 3
Technology: CMOS
Mounting: SMD
Case: SOIC14
Supply voltage: 2...6V DC
Operating temperature: -40...85°C
Kind of package: tube
Family: AC
Manufacturer series: AC
на замовлення 29 шт:
термін постачання 21-30 дні (днів)
9+49.69 грн
10+45.32 грн
Мінімальне замовлення: 9
В кошику  од. на суму  грн.
MC74AC10DR2G ONSEMI MC74AC10-D.pdf Category: Gates, inverters
Description: IC: digital; NAND; Ch: 3; IN: 3; CMOS; SMD; SOIC14; AC; 2÷6VDC; -40÷85°C
Type of integrated circuit: digital
Kind of gate: NAND
Number of channels: 3
Number of inputs: 3
Technology: CMOS
Mounting: SMD
Case: SOIC14
Supply voltage: 2...6V DC
Operating temperature: -40...85°C
Kind of package: reel; tape
Family: AC
Manufacturer series: AC
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MC74ACT10DR2G ONSEMI MC74AC10-D.pdf Category: Gates, inverters
Description: IC: digital; NAND; Ch: 3; IN: 3; TTL; SMD; SOIC14; ACT; 4.5÷5.5VDC; ACT
Type of integrated circuit: digital
Kind of gate: NAND
Number of channels: 3
Number of inputs: 3
Technology: TTL
Mounting: SMD
Case: SOIC14
Supply voltage: 4.5...5.5V DC
Operating temperature: -40...85°C
Kind of package: reel; tape
Family: ACT
Manufacturer series: ACT
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MC74ACT10DTR2G ONSEMI MC74AC10-D.pdf Category: Gates, inverters
Description: IC: digital; NAND; Ch: 3; IN: 3; TTL; SMD; TSSOP14; ACT; 4.5÷5.5VDC
Type of integrated circuit: digital
Kind of gate: NAND
Number of channels: 3
Number of inputs: 3
Technology: TTL
Mounting: SMD
Case: TSSOP14
Supply voltage: 4.5...5.5V DC
Operating temperature: -40...85°C
Kind of package: reel; tape
Family: ACT
Manufacturer series: ACT
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74ACT14MTCX 74AC14-D.PDF
74ACT14MTCX
Виробник: ONSEMI
Category: Gates, inverters
Description: IC: digital; NOT; Ch: 6; IN: 1; SMD; TSSOP14; 4.5÷5.5VDC; -40÷85°C
Supply voltage: 4.5...5.5V DC
Mounting: SMD
Operating temperature: -40...85°C
Number of channels: hex; 6
Kind of gate: NOT
Kind of package: reel; tape
Kind of input: with Schmitt trigger
Number of inputs: 1
Family: ACT
Type of integrated circuit: digital
Case: TSSOP14
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NCP59301DS30R4G NCP59300-D.PDF
Виробник: ONSEMI
Category: LDO fixed voltage regulators
Description: IC: voltage regulator; LDO,linear,fixed; 3V; 3A; D2PAK-5; SMD; Ch: 1
Case: D2PAK-5
Mounting: SMD
Manufacturer series: NCP59300
Operating temperature: -40...125°C
Input voltage: 2.24...13.5V
Output voltage: 3V
Output current: 3A
Voltage drop: 0.5V
Tolerance: ±2.5%
Number of channels: 1
Kind of voltage regulator: fixed; LDO; linear
Type of integrated circuit: voltage regulator
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NCP59301DS28R4G NCP59300-D.PDF
Виробник: ONSEMI
Category: LDO fixed voltage regulators
Description: IC: voltage regulator; LDO,linear,fixed; 2.8V; 3A; D2PAK-5; SMD
Case: D2PAK-5
Mounting: SMD
Manufacturer series: NCP59300
Operating temperature: -40...125°C
Input voltage: 2.24...13.5V
Output voltage: 2.8V
Output current: 3A
Voltage drop: 0.5V
Tolerance: ±2.5%
Number of channels: 1
Kind of voltage regulator: fixed; LDO; linear
Type of integrated circuit: voltage regulator
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MC74HC4538ADG MC74HC4538A.PDF
MC74HC4538ADG
Виробник: ONSEMI
Category: Multivibrators
Description: IC: digital; monostable,multivibrator; Ch: 2; 2÷6VDC; SMD; SOIC16
Type of integrated circuit: digital
Kind of integrated circuit: monostable; multivibrator
Number of channels: 2
Supply voltage: 2...6V DC
Mounting: SMD
Case: SOIC16
Manufacturer series: HC
Operating temperature: -55...125°C
Kind of package: tube
Quiescent current: 800µA
на замовлення 1119 шт:
термін постачання 21-30 дні (днів)
Кількість Ціна
20+22.80 грн
24+19.94 грн
96+19.86 грн
Мінімальне замовлення: 20
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MC74HC4538ADR2G MC74HC4538A-D.pdf
MC74HC4538ADR2G
Виробник: ONSEMI
Category: Multivibrators
Description: IC: digital; monostable,multivibrator; Ch: 2; IN: 3; CMOS; 2÷6VDC
Type of integrated circuit: digital
Kind of integrated circuit: monostable; multivibrator
Number of channels: 2
Number of inputs: 3
Technology: CMOS
Supply voltage: 2...6V DC
Mounting: SMD
Case: SOIC16
Manufacturer series: HC
Family: HC
Operating temperature: -55...125°C
Kind of package: reel; tape
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MC74HC4538ADTR2G MC74HC4538A-D.pdf
Виробник: ONSEMI
Category: Multivibrators
Description: IC: digital; monostable,multivibrator; Ch: 2; IN: 3; CMOS; 2÷6VDC
Type of integrated circuit: digital
Kind of integrated circuit: monostable; multivibrator
Number of channels: 2
Number of inputs: 3
Technology: CMOS
Supply voltage: 2...6V DC
Mounting: SMD
Case: TSSOP16
Manufacturer series: HC
Family: HC
Operating temperature: -55...125°C
Kind of package: reel; tape
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NLV74HC4538ADR2G MC74HC4538A-D.pdf
NLV74HC4538ADR2G
Виробник: ONSEMI
Category: Multivibrators
Description: IC: digital; monostable,multivibrator; Ch: 2; IN: 3; CMOS; 2÷6VDC
Type of integrated circuit: digital
Kind of integrated circuit: monostable; multivibrator
Number of channels: 2
Number of inputs: 3
Technology: CMOS
Supply voltage: 2...6V DC
Mounting: SMD
Case: SOIC16
Manufacturer series: HC
Family: HC
Operating temperature: -55...125°C
Kind of package: reel; tape
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FDS4501h FAIRS34628-1.pdf?t.download=true&u=5oefqw fds4501h-d.pdf
FDS4501h
Виробник: ONSEMI
Category: Multi channel transistors
Description: Transistor: N/P-MOSFET; unipolar; 30/-20V; 9.3/-5.6A; 2.5W; SO8
Power dissipation: 2.5W
Drain current: 9.3/-5.6A
Gate-source voltage: ±20/±8V
Drain-source voltage: 30/-20V
Kind of package: reel; tape
On-state resistance: 80/29mΩ
Technology: PowerTrench®
Type of transistor: N/P-MOSFET
Polarisation: unipolar
Kind of channel: enhancement
Case: SO8
Gate charge: 21/27nC
Mounting: SMD
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FFSP20120A ffsp20120a-d.pdf
Виробник: ONSEMI
Category: THT Schottky diodes
Description: Diode: Schottky rectifying; SiC; THT; 1.2kV; 20A; TO220-2; tube
Type of diode: Schottky rectifying
Technology: SiC
Mounting: THT
Max. off-state voltage: 1.2kV
Load current: 20A
Semiconductor structure: single diode
Case: TO220-2
Max. forward voltage: 1.75V
Kind of package: tube
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NCP152MX280120TCG ncp152-d.pdf
Виробник: ONSEMI
Category: LDO fixed voltage regulators
Description: IC: voltage regulator; LDO,linear,fixed; 1.2V,2.8V; 150mA; XDFN6
Type of integrated circuit: voltage regulator
Kind of voltage regulator: fixed; LDO; linear
Output voltage: 1.2V; 2.8V
Output current: 0.15A
Case: XDFN6
Mounting: SMD
Manufacturer series: NCP152
Operating temperature: -40...85°C
Tolerance: ±2%
Number of channels: 2
Input voltage: 1.9...5.25V
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FQT7N10LTF FQT7N10L.pdf
FQT7N10LTF
Виробник: ONSEMI
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 100V; 1.36A; 2W; SOT223
Type of transistor: N-MOSFET
Technology: QFET®
Polarisation: unipolar
Drain-source voltage: 100V
Drain current: 1.36A
Power dissipation: 2W
Case: SOT223
Gate-source voltage: ±20V
On-state resistance: 0.38Ω
Mounting: SMD
Gate charge: 6nC
Kind of package: reel; tape
Kind of channel: enhancement
на замовлення 3694 шт:
термін постачання 21-30 дні (днів)
Кількість Ціна
8+63.00 грн
11+40.21 грн
25+34.61 грн
50+30.98 грн
100+27.69 грн
250+23.90 грн
500+23.73 грн
Мінімальне замовлення: 8
В кошику  од. на суму  грн.
BC847CWT3G bc846awt1-d.pdf
BC847CWT3G
Виробник: ONSEMI
Category: NPN SMD transistors
Description: Transistor: NPN; bipolar; 45V; 0.1A; 0.15W; SC70,SOT323
Type of transistor: NPN
Polarisation: bipolar
Collector-emitter voltage: 45V
Collector current: 0.1A
Power dissipation: 0.15W
Case: SC70; SOT323
Current gain: 420...800
Mounting: SMD
Kind of package: reel; tape
Frequency: 100MHz
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SBC847CWT1G bc846awt1-d.pdf
SBC847CWT1G
Виробник: ONSEMI
Category: NPN SMD transistors
Description: Transistor: NPN; bipolar; 45V; 0.1A; 0.15W; SC70,SOT323
Type of transistor: NPN
Polarisation: bipolar
Collector-emitter voltage: 45V
Collector current: 0.1A
Power dissipation: 0.15W
Case: SC70; SOT323
Current gain: 420...800
Mounting: SMD
Kind of package: reel; tape
Frequency: 100MHz
Application: automotive industry
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SBC847CWT3G bc846awt1-d.pdf
SBC847CWT3G
Виробник: ONSEMI
Category: NPN SMD transistors
Description: Transistor: NPN; bipolar; 45V; 0.1A; 0.15W; SC70,SOT323
Type of transistor: NPN
Polarisation: bipolar
Collector-emitter voltage: 45V
Collector current: 0.1A
Power dissipation: 0.15W
Case: SC70; SOT323
Current gain: 420...800
Mounting: SMD
Kind of package: reel; tape
Frequency: 100MHz
Application: automotive industry
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FDS6679AZ FDS6679AZ.pdf
FDS6679AZ
Виробник: ONSEMI
Category: SMD P channel transistors
Description: Transistor: P-MOSFET; unipolar; -30V; -13A; 2.5W; SO8
Type of transistor: P-MOSFET
Technology: PowerTrench®
Polarisation: unipolar
Drain-source voltage: -30V
Drain current: -13A
Power dissipation: 2.5W
Case: SO8
Gate-source voltage: ±25V
On-state resistance: 14.8mΩ
Mounting: SMD
Gate charge: 96nC
Kind of package: reel; tape
Kind of channel: enhancement
на замовлення 262 шт:
термін постачання 21-30 дні (днів)
Кількість Ціна
5+90.51 грн
10+61.39 грн
25+50.59 грн
50+43.59 грн
100+37.90 грн
Мінімальне замовлення: 5
В кошику  од. на суму  грн.
FDN352AP FDN352AP.pdf
FDN352AP
Виробник: ONSEMI
Category: SMD P channel transistors
Description: Transistor: P-MOSFET; unipolar; -30V; -1.3A; 0.5W; SuperSOT-3
Type of transistor: P-MOSFET
Polarisation: unipolar
Drain-source voltage: -30V
Drain current: -1.3A
Power dissipation: 0.5W
Case: SuperSOT-3
Gate-source voltage: ±25V
On-state resistance: 0.4Ω
Mounting: SMD
Gate charge: 1.9nC
Kind of package: reel; tape
Kind of channel: enhancement
Technology: PowerTrench®
Features of semiconductor devices: logic level
на замовлення 2960 шт:
термін постачання 21-30 дні (днів)
Кількість Ціна
12+37.27 грн
17+25.71 грн
50+19.45 грн
100+17.22 грн
250+14.58 грн
500+12.94 грн
1000+11.45 грн
Мінімальне замовлення: 12
В кошику  од. на суму  грн.
NDS352AP NDS352AP.pdf
NDS352AP
Виробник: ONSEMI
Category: SMD P channel transistors
Description: Transistor: P-MOSFET; unipolar; -30V; -0.9A; 0.5W; SuperSOT-3
Type of transistor: P-MOSFET
Polarisation: unipolar
Drain-source voltage: -30V
Drain current: -0.9A
Power dissipation: 0.5W
Case: SuperSOT-3
Gate-source voltage: ±20V
On-state resistance: 0.7Ω
Mounting: SMD
Gate charge: 3nC
Kind of package: reel; tape
Kind of channel: enhancement
Features of semiconductor devices: logic level
на замовлення 314 шт:
термін постачання 21-30 дні (днів)
Кількість Ціна
13+36.38 грн
17+25.38 грн
50+19.20 грн
100+17.06 грн
250+14.58 грн
Мінімальне замовлення: 13
В кошику  од. на суму  грн.
NTMFS008N12MCT1G ntmfs008n12mc-d.pdf
Виробник: ONSEMI
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 120V; 79A; Idm: 352A; 40W; SO8
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 120V
Drain current: 79A
Pulsed drain current: 352A
Power dissipation: 40W
Case: SO8
Gate-source voltage: ±20V
On-state resistance: 8mΩ
Mounting: SMD
Gate charge: 33nC
Kind of package: reel; tape
Kind of channel: enhancement
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NVMFS5C460NT1G nvmfs5c460n-d.pdf
Виробник: ONSEMI
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 40V; 71A; Idm: 352A; 25W; DFN5
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 40V
Drain current: 71A
Pulsed drain current: 352A
Power dissipation: 25W
Case: DFN5
Gate-source voltage: ±20V
On-state resistance: 5.3mΩ
Mounting: SMD
Gate charge: 16nC
Kind of package: reel; tape
Kind of channel: enhancement
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NVMFS5C460NWFT1G nvmfs5c460n-d.pdf
Виробник: ONSEMI
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 40V; 71A; Idm: 352A; 25W; DFN5
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 40V
Drain current: 71A
Pulsed drain current: 352A
Power dissipation: 25W
Case: DFN5
Gate-source voltage: ±20V
On-state resistance: 5.3mΩ
Mounting: SMD
Gate charge: 16nC
Kind of package: reel; tape
Kind of channel: enhancement
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NVMYS5D3N04CTWG nvmys5d3n04c-d.pdf
Виробник: ONSEMI
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 40V; 71A; Idm: 352A; 25W; LFPAK56
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 40V
Drain current: 71A
Pulsed drain current: 352A
Power dissipation: 25W
Case: LFPAK56
Gate-source voltage: ±20V
On-state resistance: 5.3mΩ
Mounting: SMD
Gate charge: 16nC
Kind of package: reel; tape
Kind of channel: enhancement
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ECH8695R-TL-W ech8695r-d.pdf
ECH8695R-TL-W
Виробник: ONSEMI
Category: Multi channel transistors
Description: Transistor: N-MOSFET x2; unipolar; 24V; 11A; Idm: 60A; 1.4W; ECH8
Application: charging control
Semiconductor structure: common drain
Case: ECH8
Kind of channel: enhancement
Version: ESD
Mounting: SMD
Type of transistor: N-MOSFET x2
Polarisation: unipolar
Kind of package: reel; tape
Gate charge: 10nC
On-state resistance: 9.1mΩ
Power dissipation: 1.4W
Drain current: 11A
Gate-source voltage: ±12.5V
Drain-source voltage: 24V
Pulsed drain current: 60A
на замовлення 2062 шт:
термін постачання 21-30 дні (днів)
Кількість Ціна
9+55.02 грн
10+41.36 грн
100+28.92 грн
500+23.57 грн
Мінімальне замовлення: 9
В кошику  од. на суму  грн.
NSR0620P2T5G NSR0620P2.PDF
NSR0620P2T5G
Виробник: ONSEMI
Category: SMD Schottky diodes
Description: Diode: Schottky switching; SOD923; SMD; 20V; 0.5A; reel,tape
Type of diode: Schottky switching
Case: SOD923
Mounting: SMD
Max. off-state voltage: 20V
Load current: 0.5A
Semiconductor structure: single diode
Max. forward voltage: 0.52V
Max. forward impulse current: 1A
Kind of package: reel; tape
на замовлення 2673 шт:
термін постачання 21-30 дні (днів)
Кількість Ціна
39+11.54 грн
51+8.16 грн
70+5.93 грн
100+5.44 грн
Мінімальне замовлення: 39
В кошику  од. на суму  грн.
SZESD9X5.0ST5G esd9x3.3st5g-d.pdf
Виробник: ONSEMI
Category: Unidirectional TVS SMD diodes
Description: Diode: TVS; 6.2V; unidirectional; SOD923F; reel,tape
Type of diode: TVS
Max. off-state voltage: 5V
Breakdown voltage: 6.2V
Semiconductor structure: unidirectional
Case: SOD923F
Mounting: SMD
Kind of package: reel; tape
Application: automotive industry
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1SMB5956BT3G 1SMB59xxBT3G.PDF
1SMB5956BT3G
Виробник: ONSEMI
Category: SMD Zener diodes
Description: Diode: Zener; 3W; 200V; SMD; reel,tape; SMB; single diode
Type of diode: Zener
Power dissipation: 3W
Zener voltage: 200V
Kind of package: reel; tape
Case: SMB
Mounting: SMD
Tolerance: ±5%
Semiconductor structure: single diode
Manufacturer series: 1SMB59xxBT3G
на замовлення 4289 шт:
термін постачання 21-30 дні (днів)
Кількість Ціна
30+15.08 грн
42+9.89 грн
51+8.16 грн
62+6.67 грн
Мінімальне замовлення: 30
В кошику  од. на суму  грн.
DF02S DF02S.pdf
DF02S
Виробник: ONSEMI
Category: SMD/THT sing. phase diode bridge rectif.
Description: Bridge rectifier: single-phase; 200V; If: 1.5A; Ifsm: 50A; SDIP 4L
Kind of package: reel; tape
Case: SDIP 4L
Load current: 1.5A
Max. forward impulse current: 50A
Max. off-state voltage: 200V
Type of bridge rectifier: single-phase
Electrical mounting: SMT
на замовлення 2904 шт:
термін постачання 21-30 дні (днів)
Кількість Ціна
9+49.69 грн
16+26.94 грн
50+22.49 грн
100+20.76 грн
250+18.62 грн
500+17.06 грн
1000+16.81 грн
Мінімальне замовлення: 9
В кошику  од. на суму  грн.
1N5956BRLG 1N59xxB.pdf
1N5956BRLG
Виробник: ONSEMI
Category: THT Zener diodes
Description: Diode: Zener; 3W; 200V; reel,tape; CASE59; single diode; 1uA
Type of diode: Zener
Power dissipation: 3W
Zener voltage: 200V
Kind of package: reel; tape
Case: CASE59
Mounting: THT
Tolerance: ±5%
Semiconductor structure: single diode
Manufacturer series: 1N59xxB
Leakage current: 1µA
на замовлення 4964 шт:
термін постачання 21-30 дні (днів)
Кількість Ціна
42+10.65 грн
50+8.82 грн
100+8.32 грн
250+8.07 грн
Мінімальне замовлення: 42
В кошику  од. на суму  грн.
MC74AC125DTR2G mc74ac125-d.pdf
MC74AC125DTR2G
Виробник: ONSEMI
Category: Buffers, transceivers, drivers
Description: IC: digital; buffer,non-inverting; Ch: 4; CMOS; SMD; TSSOP14; AC
Type of integrated circuit: digital
Kind of integrated circuit: buffer; non-inverting
Number of channels: 4
Technology: CMOS
Mounting: SMD
Case: TSSOP14
Manufacturer series: AC
Operating temperature: -40...85°C
Kind of output: 3-state
Supply voltage: 2...6V DC
на замовлення 731 шт:
термін постачання 21-30 дні (днів)
Кількість Ціна
13+35.49 грн
17+25.71 грн
25+22.58 грн
100+18.46 грн
250+18.04 грн
Мінімальне замовлення: 13
В кошику  од. на суму  грн.
MC74AC125DR2G mc74ac125-d.pdf
MC74AC125DR2G
Виробник: ONSEMI
Category: Buffers, transceivers, drivers
Description: IC: digital; buffer,non-inverting; Ch: 4; CMOS; SMD; SO14; AC; 2÷6VDC
Type of integrated circuit: digital
Kind of integrated circuit: buffer; non-inverting
Number of channels: 4
Technology: CMOS
Mounting: SMD
Case: SO14
Manufacturer series: AC
Operating temperature: -40...85°C
Kind of output: 3-state
Supply voltage: 2...6V DC
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MC74ACT125DR2G mc74ac125-d.pdf
MC74ACT125DR2G
Виробник: ONSEMI
Category: Buffers, transceivers, drivers
Description: IC: digital; buffer,non-inverting; Ch: 4; SMD; SO14; ACT; -40÷85°C
Type of integrated circuit: digital
Kind of integrated circuit: buffer; non-inverting
Number of channels: 4
Mounting: SMD
Case: SO14
Manufacturer series: ACT
Operating temperature: -40...85°C
Kind of output: 3-state
Supply voltage: 2...6V DC
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MC74VHC125DG MC74VHC125-D.pdf
MC74VHC125DG
Виробник: ONSEMI
Category: Buffers, transceivers, drivers
Description: IC: digital; 3-state,bus buffer; Ch: 4; IN: 2; CMOS; SMD; SOIC14; VHC
Type of integrated circuit: digital
Kind of integrated circuit: 3-state; bus buffer
Number of channels: 4
Technology: CMOS
Mounting: SMD
Case: SOIC14
Supply voltage: 2...5.5V DC
Family: VHC
Kind of package: tube
Operating temperature: -55...125°C
Number of inputs: 2
Kind of output: 3-state
Manufacturer series: VHC
на замовлення 145 шт:
термін постачання 21-30 дні (днів)
Кількість Ціна
9+50.58 грн
12+35.68 грн
55+29.75 грн
110+27.44 грн
Мінімальне замовлення: 9
В кошику  од. на суму  грн.
74VHC125MTCX description 74VHC125-D.PDF
74VHC125MTCX
Виробник: ONSEMI
Category: Buffers, transceivers, drivers
Description: IC: digital; buffer,non-inverting; Ch: 4; CMOS; SMD; TSSOP14; VHC
Type of integrated circuit: digital
Kind of integrated circuit: buffer; non-inverting
Technology: CMOS
Kind of package: reel; tape
Mounting: SMD
Operating temperature: -40...85°C
Quiescent current: 40µA
Supply voltage: 2...5.5V DC
Number of channels: 4
Kind of output: 3-state
Manufacturer series: VHC
Case: TSSOP14
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FQP17P06 FQP17P06.pdf
FQP17P06
Виробник: ONSEMI
Category: THT P channel transistors
Description: Transistor: P-MOSFET; unipolar; -60V; -12A; 79W; TO220AB
Technology: QFET®
Mounting: THT
Case: TO220AB
Kind of package: tube
Drain-source voltage: -60V
Drain current: -12A
Gate charge: 27nC
Polarisation: unipolar
On-state resistance: 0.12Ω
Type of transistor: P-MOSFET
Kind of channel: enhancement
Gate-source voltage: ±25V
Power dissipation: 79W
на замовлення 80 шт:
термін постачання 21-30 дні (днів)
Кількість Ціна
6+84.30 грн
Мінімальне замовлення: 6
В кошику  од. на суму  грн.
NC7SP17P5X NC7SP17.pdf
NC7SP17P5X
Виробник: ONSEMI
Category: Buffers, transceivers, drivers
Description: IC: digital; buffer,non-inverting; Ch: 1; CMOS; SMD; SC70-5; 0.9uA
Type of integrated circuit: digital
Kind of integrated circuit: buffer; non-inverting
Number of channels: 1
Technology: CMOS
Mounting: SMD
Case: SC70-5
Operating temperature: -40...85°C
Kind of package: reel; tape
Supply voltage: 0.9...3.6V DC
Quiescent current: 0.9µA
Kind of input: with Schmitt trigger
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MMBF5457 2N5457-59%2C%20MMBF5457-59.pdf
MMBF5457
Виробник: ONSEMI
Category: SMD N channel transistors
Description: Transistor: N-JFET; unipolar; 3mA; 0.35W; SOT23; Igt: 10mA
Type of transistor: N-JFET
Polarisation: unipolar
Drain current: 3mA
Power dissipation: 0.35W
Case: SOT23
Gate-source voltage: -25V
Mounting: SMD
Kind of package: reel; tape
Gate current: 10mA
на замовлення 1773 шт:
термін постачання 21-30 дні (днів)
Кількість Ціна
28+15.97 грн
33+12.77 грн
100+11.78 грн
250+11.21 грн
500+10.13 грн
1000+9.72 грн
Мінімальне замовлення: 28
В кошику  од. на суму  грн.
MC74HC73ADG MC74HC73-D.pdf
MC74HC73ADG
Виробник: ONSEMI
Category: Flip-Flops
Description: IC: digital; JK flip-flop; Ch: 2; CMOS; HC; SMD; SO14; tube
Type of integrated circuit: digital
Kind of integrated circuit: JK flip-flop
Number of channels: 2
Technology: CMOS
Manufacturer series: HC
Mounting: SMD
Case: SO14
Operating temperature: -55...125°C
Supply voltage: 2...6V DC
Kind of package: tube
Trigger: negative-edge-triggered
на замовлення 362 шт:
термін постачання 21-30 дні (днів)
Кількість Ціна
12+37.27 грн
18+23.98 грн
25+21.67 грн
55+20.10 грн
110+19.94 грн
Мінімальне замовлення: 12
В кошику  од. на суму  грн.
MC74HC73ADR2G MC74HC73-D.pdf
MC74HC73ADR2G
Виробник: ONSEMI
Category: Flip-Flops
Description: IC: digital; JK flip-flop; Ch: 2; CMOS; HC; SMD; SO14; reel,tape
Type of integrated circuit: digital
Kind of integrated circuit: JK flip-flop
Number of channels: 2
Technology: CMOS
Manufacturer series: HC
Mounting: SMD
Case: SO14
Operating temperature: -55...125°C
Supply voltage: 2...6V DC
Kind of package: reel; tape
Trigger: negative-edge-triggered
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MC74HC73ADTR2G MC74HC73-D.pdf
MC74HC73ADTR2G
Виробник: ONSEMI
Category: Flip-Flops
Description: IC: digital; JK flip-flop; Ch: 2; CMOS; HC; SMD; TSSOP14; reel,tape
Type of integrated circuit: digital
Kind of integrated circuit: JK flip-flop
Number of channels: 2
Technology: CMOS
Manufacturer series: HC
Mounting: SMD
Case: TSSOP14
Operating temperature: -55...125°C
Supply voltage: 2...6V DC
Kind of package: reel; tape
Trigger: negative-edge-triggered
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FJA4313OTU fja4313-d.pdf
Виробник: ONSEMI
Category: NPN THT transistors
Description: Transistor: NPN; bipolar; 250V; 17A; 130W; TO3P
Type of transistor: NPN
Kind of package: tube
Mounting: THT
Power dissipation: 130W
Collector current: 17A
Collector-emitter voltage: 250V
Frequency: 30MHz
Case: TO3P
Polarisation: bipolar
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FDD8896 FDD,FDU8896.pdf
FDD8896
Виробник: ONSEMI
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 30V; 94A; 80W; DPAK
Type of transistor: N-MOSFET
Technology: PowerTrench®
Polarisation: unipolar
Drain-source voltage: 30V
Drain current: 94A
Power dissipation: 80W
Case: DPAK
Gate-source voltage: ±20V
On-state resistance: 9.2mΩ
Mounting: SMD
Gate charge: 60nC
Kind of package: reel; tape
Kind of channel: enhancement
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NTP150N65S3HF ntp150n65s3hf-d.pdf
Виробник: ONSEMI
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 650V; 24A; Idm: 60A; 192W; TO220-3
Type of transistor: N-MOSFET
Power dissipation: 192W
Case: TO220-3
Mounting: THT
Gate charge: 43nC
Kind of package: tube
Polarisation: unipolar
Kind of channel: enhancement
On-state resistance: 0.15Ω
Drain current: 24A
Gate-source voltage: ±30V
Pulsed drain current: 60A
Drain-source voltage: 650V
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SS33 SS32_SS39.pdf
Виробник: ONSEMI
Category: SMD Schottky diodes
Description: Diode: Schottky rectifying; SMC; SMD; 30V; 3A; reel,tape; 2.27W
Mounting: SMD
Load current: 3A
Type of diode: Schottky rectifying
Semiconductor structure: single diode
Case: SMC
Max. forward voltage: 0.5V
Power dissipation: 2.27W
Kind of package: reel; tape
Max. off-state voltage: 30V
Max. forward impulse current: 100A
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SS32 SS32_SS39.pdf
Виробник: ONSEMI
Category: SMD Schottky diodes
Description: Diode: Schottky rectifying; SMC; SMD; 20V; 3A; reel,tape; 2.27W
Mounting: SMD
Kind of package: reel; tape
Max. forward voltage: 0.5V
Power dissipation: 2.27W
Load current: 3A
Max. off-state voltage: 20V
Max. forward impulse current: 100A
Case: SMC
Type of diode: Schottky rectifying
Semiconductor structure: single diode
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NVMTS1D2N08H nvmts1d2n08h-d.pdf
Виробник: ONSEMI
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 80V; 337A; Idm: 900A; 150W; DFNW8
Type of transistor: N-MOSFET
Polarisation: unipolar
Power dissipation: 150W
Case: DFNW8
Mounting: SMD
Kind of package: reel; tape
Gate charge: 147nC
On-state resistance: 1.1mΩ
Drain-source voltage: 80V
Drain current: 337A
Pulsed drain current: 900A
Gate-source voltage: ±20V
Kind of channel: enhancement
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NTMTS1D2N08H ntmts1d2n08h-d.pdf
Виробник: ONSEMI
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 80V; 335A; Idm: 900A; 150W; DFNW8
Type of transistor: N-MOSFET
Polarisation: unipolar
Power dissipation: 150W
Case: DFNW8
Mounting: SMD
Kind of package: reel; tape
Gate charge: 147nC
On-state resistance: 1.1mΩ
Drain-source voltage: 80V
Drain current: 335A
Pulsed drain current: 900A
Gate-source voltage: ±20V
Kind of channel: enhancement
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NTMTS1D5N08H ntmts1d5n08h-d.pdf
Виробник: ONSEMI
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 80V; 255A; Idm: 900A; 83W; DFNW8
Type of transistor: N-MOSFET
Polarisation: unipolar
Power dissipation: 83W
Case: DFNW8
Mounting: SMD
Kind of package: reel; tape
Gate charge: 125nC
On-state resistance: 1.5mΩ
Drain-source voltage: 80V
Drain current: 255A
Pulsed drain current: 900A
Gate-source voltage: ±20V
Kind of channel: enhancement
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NTMTS1D6N10MCTXG ntmts1d6n10mc-d.pdf
Виробник: ONSEMI
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 100V; 273A; Idm: 900A; 146W; DFNW8
Type of transistor: N-MOSFET
Polarisation: unipolar
Power dissipation: 146W
Case: DFNW8
Mounting: SMD
Kind of package: reel; tape
Gate charge: 106nC
On-state resistance: 1.7mΩ
Drain-source voltage: 100V
Drain current: 273A
Pulsed drain current: 900A
Gate-source voltage: ±20V
Kind of channel: enhancement
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NVMTS1D5N08H nvmts1d5n08h-d.pdf
Виробник: ONSEMI
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 80V; 273A; Idm: 900A; 129W; DFNW8
Type of transistor: N-MOSFET
Polarisation: unipolar
Power dissipation: 129W
Case: DFNW8
Mounting: SMD
Kind of package: reel; tape
Gate charge: 125nC
On-state resistance: 1.4mΩ
Drain-source voltage: 80V
Drain current: 273A
Pulsed drain current: 900A
Gate-source voltage: ±20V
Kind of channel: enhancement
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NVMTS1D6N10MCTXG nvmts1d6n10mc-d.pdf
Виробник: ONSEMI
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 100V; 273A; Idm: 900A; 146W; DFNW8
Type of transistor: N-MOSFET
Polarisation: unipolar
Power dissipation: 146W
Case: DFNW8
Mounting: SMD
Kind of package: reel; tape
Gate charge: 106nC
On-state resistance: 1.7mΩ
Drain-source voltage: 100V
Drain current: 273A
Pulsed drain current: 900A
Gate-source voltage: ±20V
Kind of channel: enhancement
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FAN4800AUM fan4800cu-d.pdf
Виробник: ONSEMI
Category: Integrated circuits - others
Description: IC: PMIC; PFC controller,PWM controller; SO16; -40÷105°C
Type of integrated circuit: PMIC
Kind of integrated circuit: PFC controller; PWM controller
Case: SO16
Mounting: SMD
Operating temperature: -40...105°C
Topology: boost
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FAN4800AUN fan4800cu-d.pdf
Виробник: ONSEMI
Category: Integrated circuits - others
Description: IC: PMIC; PFC controller,PWM controller; DIP16; -40÷105°C
Type of integrated circuit: PMIC
Kind of integrated circuit: PFC controller; PWM controller
Case: DIP16
Mounting: SMD
Operating temperature: -40...105°C
Topology: boost
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MJD128T4G mjd128-d.pdf
Виробник: ONSEMI
Category: PNP SMD Darlington transistors
Description: Transistor: PNP; bipolar; Darlington; 120V; 8A; 1.75W; DPAK
Kind of transistor: Darlington
Case: DPAK
Mounting: SMD
Type of transistor: PNP
Kind of package: reel; tape
Power dissipation: 1.75W
Collector current: 8A
Collector-emitter voltage: 120V
Polarisation: bipolar
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NJVMJD128T4G mjd128-d.pdf
Виробник: ONSEMI
Category: PNP SMD Darlington transistors
Description: Transistor: PNP; bipolar; Darlington; 120V; 8A; 1.75W; DPAK
Application: automotive industry
Kind of transistor: Darlington
Case: DPAK
Mounting: SMD
Type of transistor: PNP
Kind of package: reel; tape
Power dissipation: 1.75W
Collector current: 8A
Collector-emitter voltage: 120V
Polarisation: bipolar
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MUN5111DW1T1G MUN5111DW1.PDF
MUN5111DW1T1G
Виробник: ONSEMI
Category: PNP SMD transistors
Description: Transistor: PNP x2; bipolar; BRT; 50V; 0.1A; 0.187W; R1: 10kΩ
Type of transistor: PNP x2
Kind of package: reel; tape
Case: SC70-6; SC88; SOT363
Mounting: SMD
Collector current: 0.1A
Power dissipation: 0.187W
Collector-emitter voltage: 50V
Base resistor: 10kΩ
Base-emitter resistor: 10kΩ
Polarisation: bipolar
Kind of transistor: BRT
на замовлення 1200 шт:
термін постачання 21-30 дні (днів)
Кількість Ціна
27+16.86 грн
40+10.38 грн
100+6.25 грн
500+4.50 грн
1000+3.96 грн
Мінімальне замовлення: 27
В кошику  од. на суму  грн.
NTD2955T4G ntd2955-d.pdf 546ddeaeab93c794f84a448873c3157d.pdf
NTD2955T4G
Виробник: ONSEMI
Category: SMD P channel transistors
Description: Transistor: P-MOSFET; unipolar; -60V; -12A; Idm: -18A; 55W; DPAK
Type of transistor: P-MOSFET
Polarisation: unipolar
Drain-source voltage: -60V
Drain current: -12A
Pulsed drain current: -18A
Power dissipation: 55W
Case: DPAK
Gate-source voltage: ±20V
On-state resistance: 0.18Ω
Mounting: SMD
Gate charge: 15nC
Kind of package: reel; tape
Kind of channel: enhancement
на замовлення 240 шт:
термін постачання 21-30 дні (днів)
Кількість Ціна
6+87.85 грн
10+55.78 грн
25+49.52 грн
100+41.69 грн
Мінімальне замовлення: 6
В кошику  од. на суму  грн.
NCV8716MT30TBG ncv8716-d.pdf
Виробник: ONSEMI
Category: LDO fixed voltage regulators
Description: IC: voltage regulator; LDO,linear,fixed; 3V; 0.11A; WDFN6; SMD
Mounting: SMD
Type of integrated circuit: voltage regulator
Output current: 0.11A
Number of channels: 1
Output voltage: 3V
Kind of package: reel; tape
Application: automotive industry
Case: WDFN6
Kind of voltage regulator: fixed; LDO; linear
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MC74AC10DG MC74AC10-D.pdf
MC74AC10DG
Виробник: ONSEMI
Category: Gates, inverters
Description: IC: digital; NAND; Ch: 3; IN: 3; CMOS; SMD; SOIC14; AC; 2÷6VDC; -40÷85°C
Type of integrated circuit: digital
Kind of gate: NAND
Number of channels: 3
Number of inputs: 3
Technology: CMOS
Mounting: SMD
Case: SOIC14
Supply voltage: 2...6V DC
Operating temperature: -40...85°C
Kind of package: tube
Family: AC
Manufacturer series: AC
на замовлення 29 шт:
термін постачання 21-30 дні (днів)
Кількість Ціна
9+49.69 грн
10+45.32 грн
Мінімальне замовлення: 9
В кошику  од. на суму  грн.
MC74AC10DR2G MC74AC10-D.pdf
Виробник: ONSEMI
Category: Gates, inverters
Description: IC: digital; NAND; Ch: 3; IN: 3; CMOS; SMD; SOIC14; AC; 2÷6VDC; -40÷85°C
Type of integrated circuit: digital
Kind of gate: NAND
Number of channels: 3
Number of inputs: 3
Technology: CMOS
Mounting: SMD
Case: SOIC14
Supply voltage: 2...6V DC
Operating temperature: -40...85°C
Kind of package: reel; tape
Family: AC
Manufacturer series: AC
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MC74ACT10DR2G MC74AC10-D.pdf
Виробник: ONSEMI
Category: Gates, inverters
Description: IC: digital; NAND; Ch: 3; IN: 3; TTL; SMD; SOIC14; ACT; 4.5÷5.5VDC; ACT
Type of integrated circuit: digital
Kind of gate: NAND
Number of channels: 3
Number of inputs: 3
Technology: TTL
Mounting: SMD
Case: SOIC14
Supply voltage: 4.5...5.5V DC
Operating temperature: -40...85°C
Kind of package: reel; tape
Family: ACT
Manufacturer series: ACT
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MC74ACT10DTR2G MC74AC10-D.pdf
Виробник: ONSEMI
Category: Gates, inverters
Description: IC: digital; NAND; Ch: 3; IN: 3; TTL; SMD; TSSOP14; ACT; 4.5÷5.5VDC
Type of integrated circuit: digital
Kind of gate: NAND
Number of channels: 3
Number of inputs: 3
Technology: TTL
Mounting: SMD
Case: TSSOP14
Supply voltage: 4.5...5.5V DC
Operating temperature: -40...85°C
Kind of package: reel; tape
Family: ACT
Manufacturer series: ACT
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