| Фото | Назва | Виробник | Інформація |
Доступність |
Ціна |
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NCP114BSN330T1G | ONSEMI |
Category: LDO fixed voltage regulatorsDescription: IC: voltage regulator; LDO,linear,fixed; 3.3V; 225mA; TSSOP5; SMD Manufacturer series: NCP114 Operating temperature: -40...85°C Voltage drop: 0.135V Output current: 0.225A Output voltage: 3.3V Number of channels: 1 Input voltage: 1.7...5.5V Tolerance: ±2% Kind of voltage regulator: fixed; LDO; linear Kind of package: reel; tape Mounting: SMD Case: TSSOP5 Type of integrated circuit: voltage regulator |
на замовлення 1320 шт: термін постачання 21-30 дні (днів) |
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FCP16N60 | ONSEMI |
Category: THT N channel transistorsDescription: Transistor: N-MOSFET; unipolar; 600V; 10.1A; Idm: 48A; 167W; TO220AB Type of transistor: N-MOSFET Polarisation: unipolar Drain-source voltage: 600V Drain current: 10.1A Power dissipation: 167W Case: TO220AB Gate-source voltage: ±30V On-state resistance: 0.26Ω Mounting: THT Kind of package: tube Kind of channel: enhancement Gate charge: 70nC Pulsed drain current: 48A |
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FCPF16N60 | ONSEMI |
Category: THT N channel transistorsDescription: Transistor: N-MOSFET; SJ-MOSFET; unipolar; 600V; 10.1A; Idm: 48A Type of transistor: N-MOSFET Technology: SJ-MOSFET Polarisation: unipolar Drain-source voltage: 600V Drain current: 10.1A Power dissipation: 37.9W Case: TO220FP Gate-source voltage: ±30V On-state resistance: 0.26Ω Mounting: THT Kind of package: tube Kind of channel: enhancement Gate charge: 70nC Pulsed drain current: 48A |
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| MCT2ESR2VM | ONSEMI |
Category: Optocouplers - analog outputDescription: Optocoupler; SMD; Ch: 1; OUT: transistor; Uinsul: 4.17kV; Uce: 30V Type of optocoupler: optocoupler Mounting: SMD Number of channels: 1 Kind of output: transistor Insulation voltage: 4.17kV Case: PDIP6 Max. off-state voltage: 6V Number of pins: 6 Collector-emitter voltage: 30V |
на замовлення 2000 шт: термін постачання 21-30 дні (днів) |
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| NVMFS6H852NT1G | ONSEMI |
Category: SMD N channel transistorsDescription: Transistor: N-MOSFET; unipolar; 80V; 40A; Idm: 200A; 27W; DFN5 Type of transistor: N-MOSFET Polarisation: unipolar Drain-source voltage: 80V Drain current: 40A Pulsed drain current: 200A Power dissipation: 27W Case: DFN5 Gate-source voltage: ±20V On-state resistance: 14.2mΩ Mounting: SMD Kind of package: reel; tape Kind of channel: enhancement Gate charge: 13nC |
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| NVMFS6H852NWFT1G | ONSEMI |
Category: SMD N channel transistorsDescription: Transistor: N-MOSFET; unipolar; 80V; 40A; Idm: 200A; 27W; DFNW5 Type of transistor: N-MOSFET Polarisation: unipolar Drain-source voltage: 80V Drain current: 40A Pulsed drain current: 200A Power dissipation: 27W Case: DFNW5 Gate-source voltage: ±20V On-state resistance: 14.2mΩ Mounting: SMD Kind of package: reel; tape Kind of channel: enhancement Gate charge: 13nC |
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| FDMD8280 | ONSEMI |
Category: Multi channel transistorsDescription: Transistor: N-MOSFET x2; unipolar; 80V; 40A; Idm: 160A; 38W; PQFN8 Type of transistor: N-MOSFET x2 Polarisation: unipolar Drain-source voltage: 80V Drain current: 40A Pulsed drain current: 160A Power dissipation: 38W Case: PQFN8 Gate-source voltage: ±20V On-state resistance: 12.4mΩ Mounting: SMD Kind of package: reel; tape Kind of channel: enhancement Gate charge: 44nC |
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FDC610PZ | ONSEMI |
Category: SMD P channel transistorsDescription: Transistor: P-MOSFET; unipolar; -30V; -4.9A; 1.6W; SuperSOT-6 Mounting: SMD Type of transistor: P-MOSFET Case: SuperSOT-6 Polarisation: unipolar Drain-source voltage: -30V Drain current: -4.9A Gate charge: 13nC On-state resistance: 75mΩ Gate-source voltage: ±25V Power dissipation: 1.6W Kind of channel: enhancement Technology: PowerTrench® Kind of package: reel; tape |
на замовлення 462 шт: термін постачання 21-30 дні (днів) |
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| NSTB60BDW1T1G | ONSEMI |
Category: Complementary transistorsDescription: Transistor: NPN / PNP; bipolar; BRT,complementary pair; 50V; 22kΩ Type of transistor: NPN / PNP Polarisation: bipolar Kind of transistor: BRT; complementary pair Case: SC70-6; SC88; SOT363 Mounting: SMD Collector current: 0.15A Power dissipation: 0.385W Current gain: 120...560 Collector-emitter voltage: 50V Quantity in set/package: 3000pcs. Base resistor: 22kΩ Kind of package: reel; tape |
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| NSVTB60BDW1T1G | ONSEMI |
Category: Complementary transistorsDescription: Transistor: NPN / PNP; bipolar; BRT,complementary pair; 50V Type of transistor: NPN / PNP Application: automotive industry Polarisation: bipolar Kind of transistor: BRT; complementary pair Case: SC70-6; SC88; SOT363 Mounting: SMD Collector current: 0.15A Power dissipation: 0.25W Collector-emitter voltage: 50V Kind of package: reel; tape |
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В кошику од. на суму грн. | |||||||||||||||||
| NCP1246ALD065R2G | ONSEMI |
Category: Voltage regulators - DC/DC circuitsDescription: IC: PMIC; AC/DC switcher,PWM controller; SO7; flyback Type of integrated circuit: PMIC Kind of integrated circuit: AC/DC switcher; PWM controller Output current: 500...800mA Frequency: 58...72kHz Mounting: SMD Case: SO7 Topology: flyback Number of channels: 1 Operating temperature: -40...125°C Operating voltage: 8.9...26.5V DC |
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CAT5113VI-00-GT3 | ONSEMI |
Category: Digital potentiometersDescription: IC: digital potentiometer; 100kΩ; Up/Down Protocol; 5bit; SO8; SMD Resistance: 100kΩ Mounting: SMD Operating temperature: -40...85°C Interface: Up/Down Protocol Type of integrated circuit: digital potentiometer Kind of memory: non-volatile Case: SO8 Max DNL: ±0.5LSB Number of channels: 1 Max INL: ±1LSB Supply voltage: 2.5...6V Converter resolution: 5bit Number of positions: 100 |
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FQD2N60CTM | ONSEMI |
Category: SMD N channel transistorsDescription: Transistor: N-MOSFET; unipolar; 600V; 1.14A; 44W; DPAK Type of transistor: N-MOSFET Polarisation: unipolar Drain-source voltage: 600V Drain current: 1.14A Power dissipation: 44W Case: DPAK Gate-source voltage: ±30V On-state resistance: 4.7Ω Mounting: SMD Gate charge: 12nC Kind of package: reel; tape Kind of channel: enhancement Technology: QFET® |
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NTR4501NT1G | ONSEMI |
Category: SMD N channel transistorsDescription: Transistor: N-MOSFET; unipolar; 20V; 2.4A; Idm: 10A; 1.25W; SOT23 Type of transistor: N-MOSFET Polarisation: unipolar Drain-source voltage: 20V Drain current: 2.4A Pulsed drain current: 10A Power dissipation: 1.25W Case: SOT23 Gate-source voltage: ±12V On-state resistance: 0.105Ω Mounting: SMD Gate charge: 6nC Kind of package: reel; tape Kind of channel: enhancement |
на замовлення 8181 шт: термін постачання 21-30 дні (днів) |
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NTR4503NT1G | ONSEMI |
Category: SMD N channel transistorsDescription: Transistor: N-MOSFET; unipolar; 30V; 2.5A; Idm: 10A; 730mW; SOT23 Type of transistor: N-MOSFET Polarisation: unipolar Drain-source voltage: 30V Drain current: 2.5A Pulsed drain current: 10A Power dissipation: 0.73W Case: SOT23 Gate-source voltage: ±20V On-state resistance: 0.11Ω Mounting: SMD Gate charge: 3.6nC Kind of package: reel; tape Kind of channel: enhancement |
на замовлення 2846 шт: термін постачання 21-30 дні (днів) |
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NDT452AP | ONSEMI |
Category: SMD P channel transistorsDescription: Transistor: P-MOSFET; unipolar; -30V; -5A; 3W; SOT223 Type of transistor: P-MOSFET Polarisation: unipolar Drain-source voltage: -30V Drain current: -5A Power dissipation: 3W Case: SOT223 Gate-source voltage: ±20V On-state resistance: 0.13Ω Mounting: SMD Kind of package: reel; tape Kind of channel: enhancement |
на замовлення 4023 шт: термін постачання 21-30 дні (днів) |
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| MBR2035CT | ONSEMI |
Category: THT Schottky diodesDescription: Diode: Schottky rectifying; THT; 35V; 10Ax2; TO220AB; Ufmax: 0.95V Type of diode: Schottky rectifying Mounting: THT Max. off-state voltage: 35V Load current: 10A x2 Semiconductor structure: common cathode; double Case: TO220AB Kind of package: tube Max. forward impulse current: 150A Max. forward voltage: 0.95V Max. load current: 20A |
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| MOCD207R2VM | ONSEMI |
Category: Optocouplers - analog outputDescription: Optocoupler; SMD; Ch: 2; OUT: transistor; Uinsul: 2.5kV; Uce: 70V Type of optocoupler: optocoupler Mounting: SMD Number of channels: 2 Kind of output: transistor Insulation voltage: 2.5kV Collector-emitter voltage: 70V Case: SOIC8 Max. off-state voltage: 6V Number of pins: 8 Operating temperature: -40...100°C Load current: 60mA Max. load current: 60mA |
на замовлення 2500 шт: термін постачання 21-30 дні (днів) |
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NVJD5121NT1G | ONSEMI |
Category: Multi channel transistorsDescription: Transistor: N-MOSFET x2; unipolar; 60V; 0.212A; 0.25W Type of transistor: N-MOSFET x2 Polarisation: unipolar Drain-source voltage: 60V Drain current: 0.212A Power dissipation: 0.25W Case: SC70-6; SC88; SOT363 Gate-source voltage: ±20V On-state resistance: 1.6Ω Mounting: SMD Kind of package: reel; tape Kind of channel: enhancement |
на замовлення 50 шт: термін постачання 21-30 дні (днів) |
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NDC7001C | ONSEMI |
Category: Multi channel transistorsDescription: Transistor: N/P-MOSFET; unipolar; complementary pair; 60/-60V Kind of transistor: complementary pair Kind of channel: enhancement Mounting: SMD Kind of package: reel; tape Type of transistor: N/P-MOSFET Polarisation: unipolar Drain-source voltage: 60/-60V Drain current: 0.51/-0.34A Gate charge: 1.5/2.2nC Power dissipation: 0.96W On-state resistance: 4/10Ω Gate-source voltage: ±20V Case: SuperSOT-6 |
на замовлення 1248 шт: термін постачання 21-30 дні (днів) |
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FDC3601N | ONSEMI |
Category: Multi channel transistorsDescription: Transistor: N-MOSFET x2; unipolar; 100V; 1A; 0.96W; SuperSOT-6 Type of transistor: N-MOSFET x2 Polarisation: unipolar Drain-source voltage: 100V Drain current: 1A Power dissipation: 0.96W Case: SuperSOT-6 Gate-source voltage: ±20V On-state resistance: 976mΩ Mounting: SMD Kind of package: reel; tape Kind of channel: enhancement |
на замовлення 2990 шт: термін постачання 21-30 дні (днів) |
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NTJD5121NT1G | ONSEMI |
Category: Multi channel transistorsDescription: Transistor: N-MOSFET x2; unipolar; 60V; 0.295A; 0.25W; ESD Type of transistor: N-MOSFET x2 Polarisation: unipolar Drain-source voltage: 60V Drain current: 0.295A Power dissipation: 0.25W Case: SC70-6; SC88; SOT363 Gate-source voltage: ±20V On-state resistance: 2.5Ω Mounting: SMD Kind of package: reel; tape Kind of channel: enhancement Version: ESD Gate charge: 0.9nC |
на замовлення 1470 шт: термін постачання 21-30 дні (днів) |
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NCP115ASN180T1G | ONSEMI |
Category: LDO fixed voltage regulatorsDescription: IC: voltage regulator; LDO,linear,fixed; 1.8V; 0.3A; TSOP5; SMD Case: TSOP5 Mounting: SMD Kind of package: reel; tape Kind of voltage regulator: fixed; LDO; linear Operating temperature: -40...85°C Output current: 0.3A Number of channels: 1 Input voltage: 1.7...5.5V Output voltage: 1.8V Tolerance: ±2% Manufacturer series: NCP115 Type of integrated circuit: voltage regulator |
на замовлення 138 шт: термін постачання 21-30 дні (днів) |
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NCP115AMX330TBG | ONSEMI |
Category: LDO fixed voltage regulatorsDescription: IC: voltage regulator; LDO,linear,fixed; 3.3V; 0.3A; XDFN4; SMD Case: XDFN4 Mounting: SMD Kind of package: reel; tape Kind of voltage regulator: fixed; LDO; linear Operating temperature: -40...85°C Output current: 0.3A Number of channels: 1 Input voltage: 1.7...5.5V Output voltage: 3.3V Tolerance: ±2% Manufacturer series: NCP115 Type of integrated circuit: voltage regulator |
на замовлення 505 шт: термін постачання 21-30 дні (днів) |
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| NCP115AMX120TCG | ONSEMI |
Category: LDO fixed voltage regulatorsDescription: IC: voltage regulator; LDO,linear,fixed; 1.2V; 0.3A; XDFN4; SMD Mounting: SMD Manufacturer series: NCP115 Operating temperature: -40...85°C Number of channels: 1 Case: XDFN4 Input voltage: 1.7...5.5V Tolerance: ±2% Kind of package: reel; tape Kind of voltage regulator: fixed; LDO; linear Output voltage: 1.2V Type of integrated circuit: voltage regulator Output current: 0.3A |
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| NCP115ASN150T2G | ONSEMI |
Category: LDO fixed voltage regulatorsDescription: IC: voltage regulator; LDO,linear,fixed; 1.5V; 0.3A; TSOP5; SMD Type of integrated circuit: voltage regulator Kind of voltage regulator: fixed; LDO; linear Output voltage: 1.5V Output current: 0.3A Case: TSOP5 Mounting: SMD Manufacturer series: NCP115 Kind of package: reel; tape Operating temperature: -40...85°C Tolerance: ±2% Number of channels: 1 Input voltage: 1.7...5.5V |
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В кошику од. на суму грн. | |||||||||||||||||
| NCP115AMX105TCG | ONSEMI |
Category: LDO fixed voltage regulatorsDescription: IC: voltage regulator; LDO,linear,fixed; 1.05V; 0.3A; XDFN4; SMD Mounting: SMD Operating temperature: -40...85°C Manufacturer series: NCP115 Kind of package: reel; tape Case: XDFN4 Type of integrated circuit: voltage regulator Output current: 0.3A Output voltage: 1.05V Input voltage: 1.7...5.5V Number of channels: 1 Tolerance: ±2% Kind of voltage regulator: fixed; LDO; linear |
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| NCP115AMX110TCG | ONSEMI |
Category: LDO fixed voltage regulatorsDescription: IC: voltage regulator; LDO,linear,fixed; 1.1V; 0.3A; XDFN4; SMD Mounting: SMD Manufacturer series: NCP115 Operating temperature: -40...85°C Number of channels: 1 Case: XDFN4 Input voltage: 1.7...5.5V Tolerance: ±2% Kind of package: reel; tape Kind of voltage regulator: fixed; LDO; linear Output voltage: 1.1V Type of integrated circuit: voltage regulator Output current: 0.3A |
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В кошику од. на суму грн. | |||||||||||||||||
| NCP115AMX150TCG | ONSEMI |
Category: LDO fixed voltage regulatorsDescription: IC: voltage regulator; LDO,linear,fixed; 1.5V; 0.3A; XDFN4; SMD Mounting: SMD Manufacturer series: NCP115 Operating temperature: -40...85°C Number of channels: 1 Case: XDFN4 Input voltage: 1.7...5.5V Tolerance: ±2% Kind of package: reel; tape Kind of voltage regulator: fixed; LDO; linear Output voltage: 1.5V Type of integrated circuit: voltage regulator Output current: 0.3A |
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| NCP115AMX250TCG | ONSEMI |
Category: LDO fixed voltage regulatorsDescription: IC: voltage regulator; LDO,linear,fixed; 2.5V; 0.3A; XDFN4; SMD Mounting: SMD Manufacturer series: NCP115 Operating temperature: -40...85°C Number of channels: 1 Case: XDFN4 Input voltage: 1.7...5.5V Tolerance: ±2% Kind of package: reel; tape Kind of voltage regulator: fixed; LDO; linear Output voltage: 2.5V Type of integrated circuit: voltage regulator Output current: 0.3A |
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| NCP115AMX280TCG | ONSEMI |
Category: LDO fixed voltage regulatorsDescription: IC: voltage regulator; LDO,linear,fixed; 2.8V; 0.3A; XDFN4; SMD Mounting: SMD Manufacturer series: NCP115 Operating temperature: -40...85°C Number of channels: 1 Case: XDFN4 Input voltage: 1.7...5.5V Tolerance: ±2% Kind of package: reel; tape Kind of voltage regulator: fixed; LDO; linear Output voltage: 2.8V Type of integrated circuit: voltage regulator Output current: 0.3A |
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| NCP115AMX300TCG | ONSEMI |
Category: LDO fixed voltage regulatorsDescription: IC: voltage regulator; LDO,linear,fixed; 3V; 0.3A; XDFN4; SMD; ±2% Mounting: SMD Manufacturer series: NCP115 Operating temperature: -40...85°C Number of channels: 1 Case: XDFN4 Input voltage: 1.7...5.5V Tolerance: ±2% Kind of package: reel; tape Kind of voltage regulator: fixed; LDO; linear Output voltage: 3V Type of integrated circuit: voltage regulator Output current: 0.3A |
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| NCP115AMX330TCG | ONSEMI |
Category: LDO fixed voltage regulatorsDescription: IC: voltage regulator; LDO,linear,fixed; 3.3V; 0.3A; XDFN4; SMD Mounting: SMD Manufacturer series: NCP115 Operating temperature: -40...85°C Number of channels: 1 Case: XDFN4 Input voltage: 1.7...5.5V Tolerance: ±2% Kind of package: reel; tape Kind of voltage regulator: fixed; LDO; linear Output voltage: 3.3V Type of integrated circuit: voltage regulator Output current: 0.3A |
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| NCP115ASN120T2G | ONSEMI |
Category: LDO fixed voltage regulatorsDescription: IC: voltage regulator; LDO,linear,fixed; 1.2V; 0.3A; TSOP5; SMD Mounting: SMD Manufacturer series: NCP115 Operating temperature: -40...85°C Number of channels: 1 Case: TSOP5 Input voltage: 1.7...5.5V Tolerance: ±2% Kind of package: reel; tape Kind of voltage regulator: fixed; LDO; linear Output voltage: 1.2V Type of integrated circuit: voltage regulator Output current: 0.3A |
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| NCP115ASN180T2G | ONSEMI |
Category: LDO fixed voltage regulatorsDescription: IC: voltage regulator; LDO,linear,fixed; 1.8V; 0.3A; TSOP5; SMD Kind of voltage regulator: fixed; LDO; linear Type of integrated circuit: voltage regulator Mounting: SMD Kind of package: reel; tape Case: TSOP5 Operating temperature: -40...85°C Output current: 0.3A Number of channels: 1 Tolerance: ±2% Input voltage: 1.7...5.5V Output voltage: 1.8V Manufacturer series: NCP115 |
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| NCP115ASN250T2G | ONSEMI |
Category: LDO fixed voltage regulatorsDescription: IC: voltage regulator; LDO,linear,fixed; 2.5V; 0.3A; TSOP5; SMD Mounting: SMD Manufacturer series: NCP115 Operating temperature: -40...85°C Number of channels: 1 Case: TSOP5 Input voltage: 1.7...5.5V Tolerance: ±2% Kind of package: reel; tape Kind of voltage regulator: fixed; LDO; linear Output voltage: 2.5V Type of integrated circuit: voltage regulator Output current: 0.3A |
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NRVTS245ESFT3G | ONSEMI |
Category: SMD Schottky diodesDescription: Diode: Schottky rectifying; SOD123F; SMD; 45V; 2A; reel,tape Type of diode: Schottky rectifying Mounting: SMD Max. off-state voltage: 45V Load current: 2A Semiconductor structure: single diode Case: SOD123F Max. forward voltage: 0.65V Max. load current: 4A Max. forward impulse current: 50A Kind of package: reel; tape Application: automotive industry |
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NRVTS245ESFT1G | ONSEMI |
Category: SMD Schottky diodesDescription: Diode: Schottky rectifying; SOD123F; SMD; 45V; 2A; reel,tape Type of diode: Schottky rectifying Mounting: SMD Max. off-state voltage: 45V Load current: 2A Semiconductor structure: single diode Case: SOD123F Max. forward voltage: 0.65V Max. load current: 4A Max. forward impulse current: 50A Kind of package: reel; tape Application: automotive industry |
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| NRVTS1545EMFST3G | ONSEMI |
Category: SMD Schottky diodesDescription: Diode: Schottky rectifying; DFN5; SMD; 45V; 15A; reel,tape Type of diode: Schottky rectifying Mounting: SMD Max. off-state voltage: 45V Load current: 15A Semiconductor structure: single diode Case: DFN5 Max. forward voltage: 0.6V Max. load current: 30A Max. forward impulse current: 210A Kind of package: reel; tape Application: automotive industry |
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| NRVB1045MFST1G | ONSEMI |
Category: SMD Schottky diodesDescription: Diode: Schottky rectifying; DFN5; SMD; 45V; 10A; reel,tape Type of diode: Schottky rectifying Mounting: SMD Max. off-state voltage: 45V Load current: 10A Semiconductor structure: single diode Case: DFN5 Max. forward voltage: 0.75V Max. forward impulse current: 150A Kind of package: reel; tape Application: automotive industry Max. load current: 20A |
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| NRVB1045MFST3G | ONSEMI |
Category: SMD Schottky diodesDescription: Diode: Schottky rectifying; DFN5; SMD; 45V; 10A; reel,tape Type of diode: Schottky rectifying Mounting: SMD Max. off-state voltage: 45V Load current: 10A Semiconductor structure: single diode Case: DFN5 Max. forward voltage: 0.75V Max. forward impulse current: 150A Kind of package: reel; tape Application: automotive industry Max. load current: 20A |
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| NRVTS1245EMFST1G | ONSEMI |
Category: SMD Schottky diodesDescription: Diode: Schottky rectifying; DFN5; SMD; 45V; 12A; reel,tape Type of diode: Schottky rectifying Mounting: SMD Max. off-state voltage: 45V Load current: 12A Semiconductor structure: single diode Case: DFN5 Max. forward voltage: 0.6V Max. load current: 24A Max. forward impulse current: 210A Kind of package: reel; tape Application: automotive industry |
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| NRVTS1245EMFST3G | ONSEMI |
Category: SMD Schottky diodesDescription: Diode: Schottky rectifying; DFN5; SMD; 45V; 12A; reel,tape Type of diode: Schottky rectifying Mounting: SMD Max. off-state voltage: 45V Load current: 12A Semiconductor structure: single diode Case: DFN5 Max. forward voltage: 0.6V Max. load current: 24A Max. forward impulse current: 210A Kind of package: reel; tape Application: automotive industry |
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В кошику од. на суму грн. | |||||||||||||||||
| NRVTS1545EMFST1G | ONSEMI |
Category: SMD Schottky diodesDescription: Diode: Schottky rectifying; DFN5; SMD; 45V; 15A; reel,tape Type of diode: Schottky rectifying Mounting: SMD Max. off-state voltage: 45V Load current: 15A Semiconductor structure: single diode Case: DFN5 Max. forward voltage: 0.6V Max. load current: 30A Max. forward impulse current: 210A Kind of package: reel; tape Application: automotive industry |
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| NRVBB40L45CTT4G | ONSEMI |
Category: SMD Schottky diodesDescription: Diode: Schottky rectifying; D2PAK; SMD; 45V; 10Ax2; reel,tape Kind of package: reel; tape Type of diode: Schottky rectifying Mounting: SMD Max. forward voltage: 0.68V Load current: 10A x2 Max. load current: 20A Max. off-state voltage: 45V Max. forward impulse current: 200A Application: automotive industry Semiconductor structure: common cathode; double Case: D2PAK |
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| NRVTSAF345T3G | ONSEMI |
Category: SMD Schottky diodesDescription: Diode: Schottky rectifying; SMA flat; SMD; 45V; 3A; reel,tape Kind of package: reel; tape Type of diode: Schottky rectifying Mounting: SMD Max. forward voltage: 0.63V Load current: 3A Max. off-state voltage: 45V Application: automotive industry Semiconductor structure: single diode Case: SMA flat |
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| HCPL4503SDM | ONSEMI |
Category: Optocouplers - analog outputDescription: Optocoupler; SMD; Ch: 1; OUT: transistor; Uinsul: 5kV; Gull wing 8 Type of optocoupler: optocoupler Mounting: SMD Number of channels: 1 Kind of output: transistor Insulation voltage: 5kV Case: Gull wing 8 Max. off-state voltage: 5V Number of pins: 8 Operating temperature: -40...100°C Manufacturer series: HCPL4503M Load current: 16mA Max. load current: 50mA |
на замовлення 3000 шт: термін постачання 21-30 дні (днів) |
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FQB8N90CTM | ONSEMI |
Category: SMD N channel transistorsDescription: Transistor: N-MOSFET; unipolar; 900V; 3.8A; Idm: 25A; 171W; D2PAK Type of transistor: N-MOSFET Polarisation: unipolar Drain-source voltage: 900V Drain current: 3.8A Pulsed drain current: 25A Power dissipation: 171W Case: D2PAK Gate-source voltage: ±30V On-state resistance: 1.9Ω Mounting: SMD Gate charge: 45nC Kind of package: reel; tape Kind of channel: enhancement Technology: QFET® |
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|
FQA8N90C-F109 | ONSEMI |
Category: THT N channel transistorsDescription: Transistor: N-MOSFET; unipolar; 900V; 5.1A; Idm: 32A; 240W; TO3PN Type of transistor: N-MOSFET Polarisation: unipolar Drain-source voltage: 900V Drain current: 5.1A Pulsed drain current: 32A Power dissipation: 240W Case: TO3PN Gate-source voltage: ±30V On-state resistance: 1.9Ω Mounting: THT Gate charge: 45nC Kind of package: tube Kind of channel: enhancement |
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| MJD32RLG | ONSEMI |
Category: PNP SMD transistorsDescription: Transistor: PNP; bipolar; 40V; 3A; 15W; DPAK Type of transistor: PNP Polarisation: bipolar Collector-emitter voltage: 40V Collector current: 3A Power dissipation: 15W Case: DPAK Current gain: 10...50 Mounting: SMD Kind of package: reel; tape Frequency: 3MHz |
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| MJD32T4G | ONSEMI |
Category: PNP SMD transistorsDescription: Transistor: PNP; bipolar; 40V; 3A; 15W; DPAK Type of transistor: PNP Polarisation: bipolar Collector-emitter voltage: 40V Collector current: 3A Power dissipation: 15W Case: DPAK Current gain: 10...50 Mounting: SMD Kind of package: reel; tape Frequency: 3MHz |
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| NJVMJD32T4G | ONSEMI |
Category: PNP SMD transistorsDescription: Transistor: PNP; bipolar; 40V; 3A; 15W; DPAK; automotive industry Type of transistor: PNP Polarisation: bipolar Collector-emitter voltage: 40V Collector current: 3A Power dissipation: 15W Case: DPAK Current gain: 10...50 Mounting: SMD Kind of package: reel; tape Frequency: 3MHz Application: automotive industry |
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В кошику од. на суму грн. | |||||||||||||||||
| GRUMMBT3904LT1G | ONSEMI |
Category: Unclassified Description: GRUMMBT3904LT1G |
на замовлення 42000 шт: термін постачання 21-30 дні (днів) |
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| FDC8886 | ONSEMI |
Category: SMD N channel transistorsDescription: Transistor: N-MOSFET; unipolar; 30V; 6.5A; Idm: 25A; 1.6W Type of transistor: N-MOSFET Technology: PowerTrench® Polarisation: unipolar Drain-source voltage: 30V Drain current: 6.5A Pulsed drain current: 25A Power dissipation: 1.6W Case: SuperSOT-6 Gate-source voltage: ±20V On-state resistance: 36mΩ Mounting: SMD Gate charge: 7.4nC Kind of package: reel; tape Kind of channel: enhancement |
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| MC3303DR2G | ONSEMI |
Category: SMD operational amplifiersDescription: IC: operational amplifier; SO14; ±1.5÷18VDC,3÷36VDC; reel,tape Mounting: SMT Operating temperature: -40...85°C Input offset voltage: 10mV Slew rate: 0.6V/μs Voltage supply range: ± 1.5...18V DC; 3...36V DC Kind of package: reel; tape Case: SO14 Type of integrated circuit: operational amplifier Number of channels: quad Input offset current: 250nA |
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|
BD439G | ONSEMI |
Category: NPN THT transistorsDescription: Transistor: NPN; bipolar; 60V; 4A; 36W; TO225 Type of transistor: NPN Polarisation: bipolar Collector-emitter voltage: 60V Collector current: 4A Case: TO225 Mounting: THT Frequency: 3MHz Current gain: 40...475 Power dissipation: 36W Kind of package: bulk |
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| MMSD4148 | ONSEMI |
Category: SMD universal diodesDescription: Diode: switching; SMD; 100V; 0.2A; 4ns; SOD123; Ifsm: 2A; 400mW Type of diode: switching Mounting: SMD Max. off-state voltage: 100V Load current: 0.2A Reverse recovery time: 4ns Semiconductor structure: single diode Case: SOD123 Max. forward impulse current: 2A Kind of package: reel; tape Power dissipation: 0.4W Capacitance: 4pF Features of semiconductor devices: fast switching |
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|
SZNUP2105LT1G | ONSEMI |
Category: Protection diodes - arraysDescription: Diode: TVS array; 26.2÷32V; 350W; bidirectional,double; SOT23 Type of diode: TVS array Breakdown voltage: 26.2...32V Peak pulse power dissipation: 0.35kW Semiconductor structure: bidirectional; double Mounting: SMD Case: SOT23 Max. off-state voltage: 24V Number of channels: 2 Kind of package: reel; tape Application: automotive industry Version: ESD |
на замовлення 1247 шт: термін постачання 21-30 дні (днів) |
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| MLISZNUP2105LT1G | ONSEMI |
Category: Unclassified Description: MLISZNUP2105LT1G |
на замовлення 120000 шт: термін постачання 21-30 дні (днів) |
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|
RS1G | ONSEMI |
Category: SMD universal diodesDescription: Diode: rectifying; SMD; 400V; 1A; 150ns; DO214AC,SMA; Ufmax: 1.3V Type of diode: rectifying Mounting: SMD Max. off-state voltage: 0.4kV Load current: 1A Reverse recovery time: 150ns Semiconductor structure: single diode Features of semiconductor devices: fast switching; glass passivated Capacitance: 10pF Case: DO214AC; SMA Max. forward voltage: 1.3V Max. forward impulse current: 30A Kind of package: reel; tape Power dissipation: 1.19W |
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В кошику од. на суму грн. |
| NCP114BSN330T1G |
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Виробник: ONSEMI
Category: LDO fixed voltage regulators
Description: IC: voltage regulator; LDO,linear,fixed; 3.3V; 225mA; TSSOP5; SMD
Manufacturer series: NCP114
Operating temperature: -40...85°C
Voltage drop: 0.135V
Output current: 0.225A
Output voltage: 3.3V
Number of channels: 1
Input voltage: 1.7...5.5V
Tolerance: ±2%
Kind of voltage regulator: fixed; LDO; linear
Kind of package: reel; tape
Mounting: SMD
Case: TSSOP5
Type of integrated circuit: voltage regulator
Category: LDO fixed voltage regulators
Description: IC: voltage regulator; LDO,linear,fixed; 3.3V; 225mA; TSSOP5; SMD
Manufacturer series: NCP114
Operating temperature: -40...85°C
Voltage drop: 0.135V
Output current: 0.225A
Output voltage: 3.3V
Number of channels: 1
Input voltage: 1.7...5.5V
Tolerance: ±2%
Kind of voltage regulator: fixed; LDO; linear
Kind of package: reel; tape
Mounting: SMD
Case: TSSOP5
Type of integrated circuit: voltage regulator
на замовлення 1320 шт:
термін постачання 21-30 дні (днів)| Кількість | Ціна |
|---|---|
| 39+ | 11.19 грн |
| 48+ | 8.47 грн |
| 55+ | 7.35 грн |
| 65+ | 6.23 грн |
| 73+ | 5.51 грн |
| 100+ | 5.04 грн |
| FCP16N60 |
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Виробник: ONSEMI
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 600V; 10.1A; Idm: 48A; 167W; TO220AB
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 600V
Drain current: 10.1A
Power dissipation: 167W
Case: TO220AB
Gate-source voltage: ±30V
On-state resistance: 0.26Ω
Mounting: THT
Kind of package: tube
Kind of channel: enhancement
Gate charge: 70nC
Pulsed drain current: 48A
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 600V; 10.1A; Idm: 48A; 167W; TO220AB
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 600V
Drain current: 10.1A
Power dissipation: 167W
Case: TO220AB
Gate-source voltage: ±30V
On-state resistance: 0.26Ω
Mounting: THT
Kind of package: tube
Kind of channel: enhancement
Gate charge: 70nC
Pulsed drain current: 48A
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| FCPF16N60 |
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Виробник: ONSEMI
Category: THT N channel transistors
Description: Transistor: N-MOSFET; SJ-MOSFET; unipolar; 600V; 10.1A; Idm: 48A
Type of transistor: N-MOSFET
Technology: SJ-MOSFET
Polarisation: unipolar
Drain-source voltage: 600V
Drain current: 10.1A
Power dissipation: 37.9W
Case: TO220FP
Gate-source voltage: ±30V
On-state resistance: 0.26Ω
Mounting: THT
Kind of package: tube
Kind of channel: enhancement
Gate charge: 70nC
Pulsed drain current: 48A
Category: THT N channel transistors
Description: Transistor: N-MOSFET; SJ-MOSFET; unipolar; 600V; 10.1A; Idm: 48A
Type of transistor: N-MOSFET
Technology: SJ-MOSFET
Polarisation: unipolar
Drain-source voltage: 600V
Drain current: 10.1A
Power dissipation: 37.9W
Case: TO220FP
Gate-source voltage: ±30V
On-state resistance: 0.26Ω
Mounting: THT
Kind of package: tube
Kind of channel: enhancement
Gate charge: 70nC
Pulsed drain current: 48A
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| MCT2ESR2VM |
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Виробник: ONSEMI
Category: Optocouplers - analog output
Description: Optocoupler; SMD; Ch: 1; OUT: transistor; Uinsul: 4.17kV; Uce: 30V
Type of optocoupler: optocoupler
Mounting: SMD
Number of channels: 1
Kind of output: transistor
Insulation voltage: 4.17kV
Case: PDIP6
Max. off-state voltage: 6V
Number of pins: 6
Collector-emitter voltage: 30V
Category: Optocouplers - analog output
Description: Optocoupler; SMD; Ch: 1; OUT: transistor; Uinsul: 4.17kV; Uce: 30V
Type of optocoupler: optocoupler
Mounting: SMD
Number of channels: 1
Kind of output: transistor
Insulation voltage: 4.17kV
Case: PDIP6
Max. off-state voltage: 6V
Number of pins: 6
Collector-emitter voltage: 30V
на замовлення 2000 шт:
термін постачання 21-30 дні (днів)| Кількість | Ціна |
|---|---|
| 195+ | 33.74 грн |
| 950+ | 27.02 грн |
| NVMFS6H852NT1G |
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Виробник: ONSEMI
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 80V; 40A; Idm: 200A; 27W; DFN5
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 80V
Drain current: 40A
Pulsed drain current: 200A
Power dissipation: 27W
Case: DFN5
Gate-source voltage: ±20V
On-state resistance: 14.2mΩ
Mounting: SMD
Kind of package: reel; tape
Kind of channel: enhancement
Gate charge: 13nC
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 80V; 40A; Idm: 200A; 27W; DFN5
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 80V
Drain current: 40A
Pulsed drain current: 200A
Power dissipation: 27W
Case: DFN5
Gate-source voltage: ±20V
On-state resistance: 14.2mΩ
Mounting: SMD
Kind of package: reel; tape
Kind of channel: enhancement
Gate charge: 13nC
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| NVMFS6H852NWFT1G |
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Виробник: ONSEMI
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 80V; 40A; Idm: 200A; 27W; DFNW5
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 80V
Drain current: 40A
Pulsed drain current: 200A
Power dissipation: 27W
Case: DFNW5
Gate-source voltage: ±20V
On-state resistance: 14.2mΩ
Mounting: SMD
Kind of package: reel; tape
Kind of channel: enhancement
Gate charge: 13nC
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 80V; 40A; Idm: 200A; 27W; DFNW5
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 80V
Drain current: 40A
Pulsed drain current: 200A
Power dissipation: 27W
Case: DFNW5
Gate-source voltage: ±20V
On-state resistance: 14.2mΩ
Mounting: SMD
Kind of package: reel; tape
Kind of channel: enhancement
Gate charge: 13nC
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| FDMD8280 |
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Виробник: ONSEMI
Category: Multi channel transistors
Description: Transistor: N-MOSFET x2; unipolar; 80V; 40A; Idm: 160A; 38W; PQFN8
Type of transistor: N-MOSFET x2
Polarisation: unipolar
Drain-source voltage: 80V
Drain current: 40A
Pulsed drain current: 160A
Power dissipation: 38W
Case: PQFN8
Gate-source voltage: ±20V
On-state resistance: 12.4mΩ
Mounting: SMD
Kind of package: reel; tape
Kind of channel: enhancement
Gate charge: 44nC
Category: Multi channel transistors
Description: Transistor: N-MOSFET x2; unipolar; 80V; 40A; Idm: 160A; 38W; PQFN8
Type of transistor: N-MOSFET x2
Polarisation: unipolar
Drain-source voltage: 80V
Drain current: 40A
Pulsed drain current: 160A
Power dissipation: 38W
Case: PQFN8
Gate-source voltage: ±20V
On-state resistance: 12.4mΩ
Mounting: SMD
Kind of package: reel; tape
Kind of channel: enhancement
Gate charge: 44nC
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| FDC610PZ |
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Виробник: ONSEMI
Category: SMD P channel transistors
Description: Transistor: P-MOSFET; unipolar; -30V; -4.9A; 1.6W; SuperSOT-6
Mounting: SMD
Type of transistor: P-MOSFET
Case: SuperSOT-6
Polarisation: unipolar
Drain-source voltage: -30V
Drain current: -4.9A
Gate charge: 13nC
On-state resistance: 75mΩ
Gate-source voltage: ±25V
Power dissipation: 1.6W
Kind of channel: enhancement
Technology: PowerTrench®
Kind of package: reel; tape
Category: SMD P channel transistors
Description: Transistor: P-MOSFET; unipolar; -30V; -4.9A; 1.6W; SuperSOT-6
Mounting: SMD
Type of transistor: P-MOSFET
Case: SuperSOT-6
Polarisation: unipolar
Drain-source voltage: -30V
Drain current: -4.9A
Gate charge: 13nC
On-state resistance: 75mΩ
Gate-source voltage: ±25V
Power dissipation: 1.6W
Kind of channel: enhancement
Technology: PowerTrench®
Kind of package: reel; tape
на замовлення 462 шт:
термін постачання 21-30 дні (днів)| Кількість | Ціна |
|---|---|
| 11+ | 39.59 грн |
| 15+ | 26.78 грн |
| 100+ | 18.62 грн |
| 200+ | 16.70 грн |
| 250+ | 16.15 грн |
| NSTB60BDW1T1G |
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Виробник: ONSEMI
Category: Complementary transistors
Description: Transistor: NPN / PNP; bipolar; BRT,complementary pair; 50V; 22kΩ
Type of transistor: NPN / PNP
Polarisation: bipolar
Kind of transistor: BRT; complementary pair
Case: SC70-6; SC88; SOT363
Mounting: SMD
Collector current: 0.15A
Power dissipation: 0.385W
Current gain: 120...560
Collector-emitter voltage: 50V
Quantity in set/package: 3000pcs.
Base resistor: 22kΩ
Kind of package: reel; tape
Category: Complementary transistors
Description: Transistor: NPN / PNP; bipolar; BRT,complementary pair; 50V; 22kΩ
Type of transistor: NPN / PNP
Polarisation: bipolar
Kind of transistor: BRT; complementary pair
Case: SC70-6; SC88; SOT363
Mounting: SMD
Collector current: 0.15A
Power dissipation: 0.385W
Current gain: 120...560
Collector-emitter voltage: 50V
Quantity in set/package: 3000pcs.
Base resistor: 22kΩ
Kind of package: reel; tape
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| NSVTB60BDW1T1G |
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Виробник: ONSEMI
Category: Complementary transistors
Description: Transistor: NPN / PNP; bipolar; BRT,complementary pair; 50V
Type of transistor: NPN / PNP
Application: automotive industry
Polarisation: bipolar
Kind of transistor: BRT; complementary pair
Case: SC70-6; SC88; SOT363
Mounting: SMD
Collector current: 0.15A
Power dissipation: 0.25W
Collector-emitter voltage: 50V
Kind of package: reel; tape
Category: Complementary transistors
Description: Transistor: NPN / PNP; bipolar; BRT,complementary pair; 50V
Type of transistor: NPN / PNP
Application: automotive industry
Polarisation: bipolar
Kind of transistor: BRT; complementary pair
Case: SC70-6; SC88; SOT363
Mounting: SMD
Collector current: 0.15A
Power dissipation: 0.25W
Collector-emitter voltage: 50V
Kind of package: reel; tape
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| NCP1246ALD065R2G |
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Виробник: ONSEMI
Category: Voltage regulators - DC/DC circuits
Description: IC: PMIC; AC/DC switcher,PWM controller; SO7; flyback
Type of integrated circuit: PMIC
Kind of integrated circuit: AC/DC switcher; PWM controller
Output current: 500...800mA
Frequency: 58...72kHz
Mounting: SMD
Case: SO7
Topology: flyback
Number of channels: 1
Operating temperature: -40...125°C
Operating voltage: 8.9...26.5V DC
Category: Voltage regulators - DC/DC circuits
Description: IC: PMIC; AC/DC switcher,PWM controller; SO7; flyback
Type of integrated circuit: PMIC
Kind of integrated circuit: AC/DC switcher; PWM controller
Output current: 500...800mA
Frequency: 58...72kHz
Mounting: SMD
Case: SO7
Topology: flyback
Number of channels: 1
Operating temperature: -40...125°C
Operating voltage: 8.9...26.5V DC
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| CAT5113VI-00-GT3 |
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Виробник: ONSEMI
Category: Digital potentiometers
Description: IC: digital potentiometer; 100kΩ; Up/Down Protocol; 5bit; SO8; SMD
Resistance: 100kΩ
Mounting: SMD
Operating temperature: -40...85°C
Interface: Up/Down Protocol
Type of integrated circuit: digital potentiometer
Kind of memory: non-volatile
Case: SO8
Max DNL: ±0.5LSB
Number of channels: 1
Max INL: ±1LSB
Supply voltage: 2.5...6V
Converter resolution: 5bit
Number of positions: 100
Category: Digital potentiometers
Description: IC: digital potentiometer; 100kΩ; Up/Down Protocol; 5bit; SO8; SMD
Resistance: 100kΩ
Mounting: SMD
Operating temperature: -40...85°C
Interface: Up/Down Protocol
Type of integrated circuit: digital potentiometer
Kind of memory: non-volatile
Case: SO8
Max DNL: ±0.5LSB
Number of channels: 1
Max INL: ±1LSB
Supply voltage: 2.5...6V
Converter resolution: 5bit
Number of positions: 100
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| FQD2N60CTM |
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Виробник: ONSEMI
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 600V; 1.14A; 44W; DPAK
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 600V
Drain current: 1.14A
Power dissipation: 44W
Case: DPAK
Gate-source voltage: ±30V
On-state resistance: 4.7Ω
Mounting: SMD
Gate charge: 12nC
Kind of package: reel; tape
Kind of channel: enhancement
Technology: QFET®
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 600V; 1.14A; 44W; DPAK
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 600V
Drain current: 1.14A
Power dissipation: 44W
Case: DPAK
Gate-source voltage: ±30V
On-state resistance: 4.7Ω
Mounting: SMD
Gate charge: 12nC
Kind of package: reel; tape
Kind of channel: enhancement
Technology: QFET®
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| NTR4501NT1G |
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Виробник: ONSEMI
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 20V; 2.4A; Idm: 10A; 1.25W; SOT23
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 20V
Drain current: 2.4A
Pulsed drain current: 10A
Power dissipation: 1.25W
Case: SOT23
Gate-source voltage: ±12V
On-state resistance: 0.105Ω
Mounting: SMD
Gate charge: 6nC
Kind of package: reel; tape
Kind of channel: enhancement
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 20V; 2.4A; Idm: 10A; 1.25W; SOT23
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 20V
Drain current: 2.4A
Pulsed drain current: 10A
Power dissipation: 1.25W
Case: SOT23
Gate-source voltage: ±12V
On-state resistance: 0.105Ω
Mounting: SMD
Gate charge: 6nC
Kind of package: reel; tape
Kind of channel: enhancement
на замовлення 8181 шт:
термін постачання 21-30 дні (днів)| Кількість | Ціна |
|---|---|
| 32+ | 13.77 грн |
| 45+ | 8.95 грн |
| 60+ | 6.68 грн |
| 100+ | 5.91 грн |
| 500+ | 4.50 грн |
| 1000+ | 4.08 грн |
| 1500+ | 3.80 грн |
| 3000+ | 3.74 грн |
| NTR4503NT1G |
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Виробник: ONSEMI
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 30V; 2.5A; Idm: 10A; 730mW; SOT23
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 30V
Drain current: 2.5A
Pulsed drain current: 10A
Power dissipation: 0.73W
Case: SOT23
Gate-source voltage: ±20V
On-state resistance: 0.11Ω
Mounting: SMD
Gate charge: 3.6nC
Kind of package: reel; tape
Kind of channel: enhancement
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 30V; 2.5A; Idm: 10A; 730mW; SOT23
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 30V
Drain current: 2.5A
Pulsed drain current: 10A
Power dissipation: 0.73W
Case: SOT23
Gate-source voltage: ±20V
On-state resistance: 0.11Ω
Mounting: SMD
Gate charge: 3.6nC
Kind of package: reel; tape
Kind of channel: enhancement
на замовлення 2846 шт:
термін постачання 21-30 дні (днів)| Кількість | Ціна |
|---|---|
| 39+ | 11.19 грн |
| 46+ | 8.87 грн |
| 55+ | 7.35 грн |
| 100+ | 6.71 грн |
| 250+ | 6.07 грн |
| 500+ | 5.59 грн |
| 1000+ | 5.28 грн |
| 1500+ | 5.12 грн |
| NDT452AP |
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Виробник: ONSEMI
Category: SMD P channel transistors
Description: Transistor: P-MOSFET; unipolar; -30V; -5A; 3W; SOT223
Type of transistor: P-MOSFET
Polarisation: unipolar
Drain-source voltage: -30V
Drain current: -5A
Power dissipation: 3W
Case: SOT223
Gate-source voltage: ±20V
On-state resistance: 0.13Ω
Mounting: SMD
Kind of package: reel; tape
Kind of channel: enhancement
Category: SMD P channel transistors
Description: Transistor: P-MOSFET; unipolar; -30V; -5A; 3W; SOT223
Type of transistor: P-MOSFET
Polarisation: unipolar
Drain-source voltage: -30V
Drain current: -5A
Power dissipation: 3W
Case: SOT223
Gate-source voltage: ±20V
On-state resistance: 0.13Ω
Mounting: SMD
Kind of package: reel; tape
Kind of channel: enhancement
на замовлення 4023 шт:
термін постачання 21-30 дні (днів)| Кількість | Ціна |
|---|---|
| 6+ | 82.63 грн |
| 7+ | 62.18 грн |
| 10+ | 56.03 грн |
| 23+ | 41.40 грн |
| 63+ | 39.16 грн |
| 500+ | 37.81 грн |
| MBR2035CT |
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Виробник: ONSEMI
Category: THT Schottky diodes
Description: Diode: Schottky rectifying; THT; 35V; 10Ax2; TO220AB; Ufmax: 0.95V
Type of diode: Schottky rectifying
Mounting: THT
Max. off-state voltage: 35V
Load current: 10A x2
Semiconductor structure: common cathode; double
Case: TO220AB
Kind of package: tube
Max. forward impulse current: 150A
Max. forward voltage: 0.95V
Max. load current: 20A
Category: THT Schottky diodes
Description: Diode: Schottky rectifying; THT; 35V; 10Ax2; TO220AB; Ufmax: 0.95V
Type of diode: Schottky rectifying
Mounting: THT
Max. off-state voltage: 35V
Load current: 10A x2
Semiconductor structure: common cathode; double
Case: TO220AB
Kind of package: tube
Max. forward impulse current: 150A
Max. forward voltage: 0.95V
Max. load current: 20A
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| MOCD207R2VM |
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Виробник: ONSEMI
Category: Optocouplers - analog output
Description: Optocoupler; SMD; Ch: 2; OUT: transistor; Uinsul: 2.5kV; Uce: 70V
Type of optocoupler: optocoupler
Mounting: SMD
Number of channels: 2
Kind of output: transistor
Insulation voltage: 2.5kV
Collector-emitter voltage: 70V
Case: SOIC8
Max. off-state voltage: 6V
Number of pins: 8
Operating temperature: -40...100°C
Load current: 60mA
Max. load current: 60mA
Category: Optocouplers - analog output
Description: Optocoupler; SMD; Ch: 2; OUT: transistor; Uinsul: 2.5kV; Uce: 70V
Type of optocoupler: optocoupler
Mounting: SMD
Number of channels: 2
Kind of output: transistor
Insulation voltage: 2.5kV
Collector-emitter voltage: 70V
Case: SOIC8
Max. off-state voltage: 6V
Number of pins: 8
Operating temperature: -40...100°C
Load current: 60mA
Max. load current: 60mA
на замовлення 2500 шт:
термін постачання 21-30 дні (днів)| Кількість | Ціна |
|---|---|
| 2500+ | 23.84 грн |
| NVJD5121NT1G |
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Виробник: ONSEMI
Category: Multi channel transistors
Description: Transistor: N-MOSFET x2; unipolar; 60V; 0.212A; 0.25W
Type of transistor: N-MOSFET x2
Polarisation: unipolar
Drain-source voltage: 60V
Drain current: 0.212A
Power dissipation: 0.25W
Case: SC70-6; SC88; SOT363
Gate-source voltage: ±20V
On-state resistance: 1.6Ω
Mounting: SMD
Kind of package: reel; tape
Kind of channel: enhancement
Category: Multi channel transistors
Description: Transistor: N-MOSFET x2; unipolar; 60V; 0.212A; 0.25W
Type of transistor: N-MOSFET x2
Polarisation: unipolar
Drain-source voltage: 60V
Drain current: 0.212A
Power dissipation: 0.25W
Case: SC70-6; SC88; SOT363
Gate-source voltage: ±20V
On-state resistance: 1.6Ω
Mounting: SMD
Kind of package: reel; tape
Kind of channel: enhancement
на замовлення 50 шт:
термін постачання 21-30 дні (днів)| Кількість | Ціна |
|---|---|
| 27+ | 16.35 грн |
| 50+ | 7.99 грн |
| NDC7001C |
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Виробник: ONSEMI
Category: Multi channel transistors
Description: Transistor: N/P-MOSFET; unipolar; complementary pair; 60/-60V
Kind of transistor: complementary pair
Kind of channel: enhancement
Mounting: SMD
Kind of package: reel; tape
Type of transistor: N/P-MOSFET
Polarisation: unipolar
Drain-source voltage: 60/-60V
Drain current: 0.51/-0.34A
Gate charge: 1.5/2.2nC
Power dissipation: 0.96W
On-state resistance: 4/10Ω
Gate-source voltage: ±20V
Case: SuperSOT-6
Category: Multi channel transistors
Description: Transistor: N/P-MOSFET; unipolar; complementary pair; 60/-60V
Kind of transistor: complementary pair
Kind of channel: enhancement
Mounting: SMD
Kind of package: reel; tape
Type of transistor: N/P-MOSFET
Polarisation: unipolar
Drain-source voltage: 60/-60V
Drain current: 0.51/-0.34A
Gate charge: 1.5/2.2nC
Power dissipation: 0.96W
On-state resistance: 4/10Ω
Gate-source voltage: ±20V
Case: SuperSOT-6
на замовлення 1248 шт:
термін постачання 21-30 дні (днів)| Кількість | Ціна |
|---|---|
| 12+ | 36.15 грн |
| 16+ | 26.14 грн |
| 50+ | 20.38 грн |
| 64+ | 14.79 грн |
| 175+ | 13.99 грн |
| 1000+ | 13.43 грн |
| FDC3601N |
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Виробник: ONSEMI
Category: Multi channel transistors
Description: Transistor: N-MOSFET x2; unipolar; 100V; 1A; 0.96W; SuperSOT-6
Type of transistor: N-MOSFET x2
Polarisation: unipolar
Drain-source voltage: 100V
Drain current: 1A
Power dissipation: 0.96W
Case: SuperSOT-6
Gate-source voltage: ±20V
On-state resistance: 976mΩ
Mounting: SMD
Kind of package: reel; tape
Kind of channel: enhancement
Category: Multi channel transistors
Description: Transistor: N-MOSFET x2; unipolar; 100V; 1A; 0.96W; SuperSOT-6
Type of transistor: N-MOSFET x2
Polarisation: unipolar
Drain-source voltage: 100V
Drain current: 1A
Power dissipation: 0.96W
Case: SuperSOT-6
Gate-source voltage: ±20V
On-state resistance: 976mΩ
Mounting: SMD
Kind of package: reel; tape
Kind of channel: enhancement
на замовлення 2990 шт:
термін постачання 21-30 дні (днів)| Кількість | Ціна |
|---|---|
| 9+ | 49.06 грн |
| 12+ | 34.13 грн |
| 100+ | 22.62 грн |
| 250+ | 19.26 грн |
| 500+ | 17.66 грн |
| NTJD5121NT1G |
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Виробник: ONSEMI
Category: Multi channel transistors
Description: Transistor: N-MOSFET x2; unipolar; 60V; 0.295A; 0.25W; ESD
Type of transistor: N-MOSFET x2
Polarisation: unipolar
Drain-source voltage: 60V
Drain current: 0.295A
Power dissipation: 0.25W
Case: SC70-6; SC88; SOT363
Gate-source voltage: ±20V
On-state resistance: 2.5Ω
Mounting: SMD
Kind of package: reel; tape
Kind of channel: enhancement
Version: ESD
Gate charge: 0.9nC
Category: Multi channel transistors
Description: Transistor: N-MOSFET x2; unipolar; 60V; 0.295A; 0.25W; ESD
Type of transistor: N-MOSFET x2
Polarisation: unipolar
Drain-source voltage: 60V
Drain current: 0.295A
Power dissipation: 0.25W
Case: SC70-6; SC88; SOT363
Gate-source voltage: ±20V
On-state resistance: 2.5Ω
Mounting: SMD
Kind of package: reel; tape
Kind of channel: enhancement
Version: ESD
Gate charge: 0.9nC
на замовлення 1470 шт:
термін постачання 21-30 дні (днів)| Кількість | Ціна |
|---|---|
| 27+ | 16.35 грн |
| 38+ | 10.71 грн |
| 53+ | 7.56 грн |
| 100+ | 6.49 грн |
| 231+ | 4.07 грн |
| 635+ | 3.84 грн |
| NCP115ASN180T1G |
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Виробник: ONSEMI
Category: LDO fixed voltage regulators
Description: IC: voltage regulator; LDO,linear,fixed; 1.8V; 0.3A; TSOP5; SMD
Case: TSOP5
Mounting: SMD
Kind of package: reel; tape
Kind of voltage regulator: fixed; LDO; linear
Operating temperature: -40...85°C
Output current: 0.3A
Number of channels: 1
Input voltage: 1.7...5.5V
Output voltage: 1.8V
Tolerance: ±2%
Manufacturer series: NCP115
Type of integrated circuit: voltage regulator
Category: LDO fixed voltage regulators
Description: IC: voltage regulator; LDO,linear,fixed; 1.8V; 0.3A; TSOP5; SMD
Case: TSOP5
Mounting: SMD
Kind of package: reel; tape
Kind of voltage regulator: fixed; LDO; linear
Operating temperature: -40...85°C
Output current: 0.3A
Number of channels: 1
Input voltage: 1.7...5.5V
Output voltage: 1.8V
Tolerance: ±2%
Manufacturer series: NCP115
Type of integrated circuit: voltage regulator
на замовлення 138 шт:
термін постачання 21-30 дні (днів)| Кількість | Ціна |
|---|---|
| 50+ | 8.61 грн |
| 65+ | 6.23 грн |
| 72+ | 5.59 грн |
| 86+ | 4.70 грн |
| 105+ | 3.82 грн |
| NCP115AMX330TBG |
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Виробник: ONSEMI
Category: LDO fixed voltage regulators
Description: IC: voltage regulator; LDO,linear,fixed; 3.3V; 0.3A; XDFN4; SMD
Case: XDFN4
Mounting: SMD
Kind of package: reel; tape
Kind of voltage regulator: fixed; LDO; linear
Operating temperature: -40...85°C
Output current: 0.3A
Number of channels: 1
Input voltage: 1.7...5.5V
Output voltage: 3.3V
Tolerance: ±2%
Manufacturer series: NCP115
Type of integrated circuit: voltage regulator
Category: LDO fixed voltage regulators
Description: IC: voltage regulator; LDO,linear,fixed; 3.3V; 0.3A; XDFN4; SMD
Case: XDFN4
Mounting: SMD
Kind of package: reel; tape
Kind of voltage regulator: fixed; LDO; linear
Operating temperature: -40...85°C
Output current: 0.3A
Number of channels: 1
Input voltage: 1.7...5.5V
Output voltage: 3.3V
Tolerance: ±2%
Manufacturer series: NCP115
Type of integrated circuit: voltage regulator
на замовлення 505 шт:
термін постачання 21-30 дні (днів)| Кількість | Ціна |
|---|---|
| 28+ | 15.49 грн |
| 33+ | 12.15 грн |
| 38+ | 10.55 грн |
| 45+ | 9.03 грн |
| 100+ | 7.35 грн |
| 250+ | 6.71 грн |
| 500+ | 6.23 грн |
| NCP115AMX120TCG |
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Виробник: ONSEMI
Category: LDO fixed voltage regulators
Description: IC: voltage regulator; LDO,linear,fixed; 1.2V; 0.3A; XDFN4; SMD
Mounting: SMD
Manufacturer series: NCP115
Operating temperature: -40...85°C
Number of channels: 1
Case: XDFN4
Input voltage: 1.7...5.5V
Tolerance: ±2%
Kind of package: reel; tape
Kind of voltage regulator: fixed; LDO; linear
Output voltage: 1.2V
Type of integrated circuit: voltage regulator
Output current: 0.3A
Category: LDO fixed voltage regulators
Description: IC: voltage regulator; LDO,linear,fixed; 1.2V; 0.3A; XDFN4; SMD
Mounting: SMD
Manufacturer series: NCP115
Operating temperature: -40...85°C
Number of channels: 1
Case: XDFN4
Input voltage: 1.7...5.5V
Tolerance: ±2%
Kind of package: reel; tape
Kind of voltage regulator: fixed; LDO; linear
Output voltage: 1.2V
Type of integrated circuit: voltage regulator
Output current: 0.3A
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| NCP115ASN150T2G |
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Виробник: ONSEMI
Category: LDO fixed voltage regulators
Description: IC: voltage regulator; LDO,linear,fixed; 1.5V; 0.3A; TSOP5; SMD
Type of integrated circuit: voltage regulator
Kind of voltage regulator: fixed; LDO; linear
Output voltage: 1.5V
Output current: 0.3A
Case: TSOP5
Mounting: SMD
Manufacturer series: NCP115
Kind of package: reel; tape
Operating temperature: -40...85°C
Tolerance: ±2%
Number of channels: 1
Input voltage: 1.7...5.5V
Category: LDO fixed voltage regulators
Description: IC: voltage regulator; LDO,linear,fixed; 1.5V; 0.3A; TSOP5; SMD
Type of integrated circuit: voltage regulator
Kind of voltage regulator: fixed; LDO; linear
Output voltage: 1.5V
Output current: 0.3A
Case: TSOP5
Mounting: SMD
Manufacturer series: NCP115
Kind of package: reel; tape
Operating temperature: -40...85°C
Tolerance: ±2%
Number of channels: 1
Input voltage: 1.7...5.5V
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| NCP115AMX105TCG |
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Виробник: ONSEMI
Category: LDO fixed voltage regulators
Description: IC: voltage regulator; LDO,linear,fixed; 1.05V; 0.3A; XDFN4; SMD
Mounting: SMD
Operating temperature: -40...85°C
Manufacturer series: NCP115
Kind of package: reel; tape
Case: XDFN4
Type of integrated circuit: voltage regulator
Output current: 0.3A
Output voltage: 1.05V
Input voltage: 1.7...5.5V
Number of channels: 1
Tolerance: ±2%
Kind of voltage regulator: fixed; LDO; linear
Category: LDO fixed voltage regulators
Description: IC: voltage regulator; LDO,linear,fixed; 1.05V; 0.3A; XDFN4; SMD
Mounting: SMD
Operating temperature: -40...85°C
Manufacturer series: NCP115
Kind of package: reel; tape
Case: XDFN4
Type of integrated circuit: voltage regulator
Output current: 0.3A
Output voltage: 1.05V
Input voltage: 1.7...5.5V
Number of channels: 1
Tolerance: ±2%
Kind of voltage regulator: fixed; LDO; linear
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| NCP115AMX110TCG |
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Виробник: ONSEMI
Category: LDO fixed voltage regulators
Description: IC: voltage regulator; LDO,linear,fixed; 1.1V; 0.3A; XDFN4; SMD
Mounting: SMD
Manufacturer series: NCP115
Operating temperature: -40...85°C
Number of channels: 1
Case: XDFN4
Input voltage: 1.7...5.5V
Tolerance: ±2%
Kind of package: reel; tape
Kind of voltage regulator: fixed; LDO; linear
Output voltage: 1.1V
Type of integrated circuit: voltage regulator
Output current: 0.3A
Category: LDO fixed voltage regulators
Description: IC: voltage regulator; LDO,linear,fixed; 1.1V; 0.3A; XDFN4; SMD
Mounting: SMD
Manufacturer series: NCP115
Operating temperature: -40...85°C
Number of channels: 1
Case: XDFN4
Input voltage: 1.7...5.5V
Tolerance: ±2%
Kind of package: reel; tape
Kind of voltage regulator: fixed; LDO; linear
Output voltage: 1.1V
Type of integrated circuit: voltage regulator
Output current: 0.3A
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| NCP115AMX150TCG |
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Виробник: ONSEMI
Category: LDO fixed voltage regulators
Description: IC: voltage regulator; LDO,linear,fixed; 1.5V; 0.3A; XDFN4; SMD
Mounting: SMD
Manufacturer series: NCP115
Operating temperature: -40...85°C
Number of channels: 1
Case: XDFN4
Input voltage: 1.7...5.5V
Tolerance: ±2%
Kind of package: reel; tape
Kind of voltage regulator: fixed; LDO; linear
Output voltage: 1.5V
Type of integrated circuit: voltage regulator
Output current: 0.3A
Category: LDO fixed voltage regulators
Description: IC: voltage regulator; LDO,linear,fixed; 1.5V; 0.3A; XDFN4; SMD
Mounting: SMD
Manufacturer series: NCP115
Operating temperature: -40...85°C
Number of channels: 1
Case: XDFN4
Input voltage: 1.7...5.5V
Tolerance: ±2%
Kind of package: reel; tape
Kind of voltage regulator: fixed; LDO; linear
Output voltage: 1.5V
Type of integrated circuit: voltage regulator
Output current: 0.3A
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| NCP115AMX250TCG |
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Виробник: ONSEMI
Category: LDO fixed voltage regulators
Description: IC: voltage regulator; LDO,linear,fixed; 2.5V; 0.3A; XDFN4; SMD
Mounting: SMD
Manufacturer series: NCP115
Operating temperature: -40...85°C
Number of channels: 1
Case: XDFN4
Input voltage: 1.7...5.5V
Tolerance: ±2%
Kind of package: reel; tape
Kind of voltage regulator: fixed; LDO; linear
Output voltage: 2.5V
Type of integrated circuit: voltage regulator
Output current: 0.3A
Category: LDO fixed voltage regulators
Description: IC: voltage regulator; LDO,linear,fixed; 2.5V; 0.3A; XDFN4; SMD
Mounting: SMD
Manufacturer series: NCP115
Operating temperature: -40...85°C
Number of channels: 1
Case: XDFN4
Input voltage: 1.7...5.5V
Tolerance: ±2%
Kind of package: reel; tape
Kind of voltage regulator: fixed; LDO; linear
Output voltage: 2.5V
Type of integrated circuit: voltage regulator
Output current: 0.3A
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| NCP115AMX280TCG |
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Виробник: ONSEMI
Category: LDO fixed voltage regulators
Description: IC: voltage regulator; LDO,linear,fixed; 2.8V; 0.3A; XDFN4; SMD
Mounting: SMD
Manufacturer series: NCP115
Operating temperature: -40...85°C
Number of channels: 1
Case: XDFN4
Input voltage: 1.7...5.5V
Tolerance: ±2%
Kind of package: reel; tape
Kind of voltage regulator: fixed; LDO; linear
Output voltage: 2.8V
Type of integrated circuit: voltage regulator
Output current: 0.3A
Category: LDO fixed voltage regulators
Description: IC: voltage regulator; LDO,linear,fixed; 2.8V; 0.3A; XDFN4; SMD
Mounting: SMD
Manufacturer series: NCP115
Operating temperature: -40...85°C
Number of channels: 1
Case: XDFN4
Input voltage: 1.7...5.5V
Tolerance: ±2%
Kind of package: reel; tape
Kind of voltage regulator: fixed; LDO; linear
Output voltage: 2.8V
Type of integrated circuit: voltage regulator
Output current: 0.3A
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| NCP115AMX300TCG |
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Виробник: ONSEMI
Category: LDO fixed voltage regulators
Description: IC: voltage regulator; LDO,linear,fixed; 3V; 0.3A; XDFN4; SMD; ±2%
Mounting: SMD
Manufacturer series: NCP115
Operating temperature: -40...85°C
Number of channels: 1
Case: XDFN4
Input voltage: 1.7...5.5V
Tolerance: ±2%
Kind of package: reel; tape
Kind of voltage regulator: fixed; LDO; linear
Output voltage: 3V
Type of integrated circuit: voltage regulator
Output current: 0.3A
Category: LDO fixed voltage regulators
Description: IC: voltage regulator; LDO,linear,fixed; 3V; 0.3A; XDFN4; SMD; ±2%
Mounting: SMD
Manufacturer series: NCP115
Operating temperature: -40...85°C
Number of channels: 1
Case: XDFN4
Input voltage: 1.7...5.5V
Tolerance: ±2%
Kind of package: reel; tape
Kind of voltage regulator: fixed; LDO; linear
Output voltage: 3V
Type of integrated circuit: voltage regulator
Output current: 0.3A
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| NCP115AMX330TCG |
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Виробник: ONSEMI
Category: LDO fixed voltage regulators
Description: IC: voltage regulator; LDO,linear,fixed; 3.3V; 0.3A; XDFN4; SMD
Mounting: SMD
Manufacturer series: NCP115
Operating temperature: -40...85°C
Number of channels: 1
Case: XDFN4
Input voltage: 1.7...5.5V
Tolerance: ±2%
Kind of package: reel; tape
Kind of voltage regulator: fixed; LDO; linear
Output voltage: 3.3V
Type of integrated circuit: voltage regulator
Output current: 0.3A
Category: LDO fixed voltage regulators
Description: IC: voltage regulator; LDO,linear,fixed; 3.3V; 0.3A; XDFN4; SMD
Mounting: SMD
Manufacturer series: NCP115
Operating temperature: -40...85°C
Number of channels: 1
Case: XDFN4
Input voltage: 1.7...5.5V
Tolerance: ±2%
Kind of package: reel; tape
Kind of voltage regulator: fixed; LDO; linear
Output voltage: 3.3V
Type of integrated circuit: voltage regulator
Output current: 0.3A
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| NCP115ASN120T2G |
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Виробник: ONSEMI
Category: LDO fixed voltage regulators
Description: IC: voltage regulator; LDO,linear,fixed; 1.2V; 0.3A; TSOP5; SMD
Mounting: SMD
Manufacturer series: NCP115
Operating temperature: -40...85°C
Number of channels: 1
Case: TSOP5
Input voltage: 1.7...5.5V
Tolerance: ±2%
Kind of package: reel; tape
Kind of voltage regulator: fixed; LDO; linear
Output voltage: 1.2V
Type of integrated circuit: voltage regulator
Output current: 0.3A
Category: LDO fixed voltage regulators
Description: IC: voltage regulator; LDO,linear,fixed; 1.2V; 0.3A; TSOP5; SMD
Mounting: SMD
Manufacturer series: NCP115
Operating temperature: -40...85°C
Number of channels: 1
Case: TSOP5
Input voltage: 1.7...5.5V
Tolerance: ±2%
Kind of package: reel; tape
Kind of voltage regulator: fixed; LDO; linear
Output voltage: 1.2V
Type of integrated circuit: voltage regulator
Output current: 0.3A
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| NCP115ASN180T2G |
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Виробник: ONSEMI
Category: LDO fixed voltage regulators
Description: IC: voltage regulator; LDO,linear,fixed; 1.8V; 0.3A; TSOP5; SMD
Kind of voltage regulator: fixed; LDO; linear
Type of integrated circuit: voltage regulator
Mounting: SMD
Kind of package: reel; tape
Case: TSOP5
Operating temperature: -40...85°C
Output current: 0.3A
Number of channels: 1
Tolerance: ±2%
Input voltage: 1.7...5.5V
Output voltage: 1.8V
Manufacturer series: NCP115
Category: LDO fixed voltage regulators
Description: IC: voltage regulator; LDO,linear,fixed; 1.8V; 0.3A; TSOP5; SMD
Kind of voltage regulator: fixed; LDO; linear
Type of integrated circuit: voltage regulator
Mounting: SMD
Kind of package: reel; tape
Case: TSOP5
Operating temperature: -40...85°C
Output current: 0.3A
Number of channels: 1
Tolerance: ±2%
Input voltage: 1.7...5.5V
Output voltage: 1.8V
Manufacturer series: NCP115
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| NCP115ASN250T2G |
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Виробник: ONSEMI
Category: LDO fixed voltage regulators
Description: IC: voltage regulator; LDO,linear,fixed; 2.5V; 0.3A; TSOP5; SMD
Mounting: SMD
Manufacturer series: NCP115
Operating temperature: -40...85°C
Number of channels: 1
Case: TSOP5
Input voltage: 1.7...5.5V
Tolerance: ±2%
Kind of package: reel; tape
Kind of voltage regulator: fixed; LDO; linear
Output voltage: 2.5V
Type of integrated circuit: voltage regulator
Output current: 0.3A
Category: LDO fixed voltage regulators
Description: IC: voltage regulator; LDO,linear,fixed; 2.5V; 0.3A; TSOP5; SMD
Mounting: SMD
Manufacturer series: NCP115
Operating temperature: -40...85°C
Number of channels: 1
Case: TSOP5
Input voltage: 1.7...5.5V
Tolerance: ±2%
Kind of package: reel; tape
Kind of voltage regulator: fixed; LDO; linear
Output voltage: 2.5V
Type of integrated circuit: voltage regulator
Output current: 0.3A
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| NRVTS245ESFT3G |
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Виробник: ONSEMI
Category: SMD Schottky diodes
Description: Diode: Schottky rectifying; SOD123F; SMD; 45V; 2A; reel,tape
Type of diode: Schottky rectifying
Mounting: SMD
Max. off-state voltage: 45V
Load current: 2A
Semiconductor structure: single diode
Case: SOD123F
Max. forward voltage: 0.65V
Max. load current: 4A
Max. forward impulse current: 50A
Kind of package: reel; tape
Application: automotive industry
Category: SMD Schottky diodes
Description: Diode: Schottky rectifying; SOD123F; SMD; 45V; 2A; reel,tape
Type of diode: Schottky rectifying
Mounting: SMD
Max. off-state voltage: 45V
Load current: 2A
Semiconductor structure: single diode
Case: SOD123F
Max. forward voltage: 0.65V
Max. load current: 4A
Max. forward impulse current: 50A
Kind of package: reel; tape
Application: automotive industry
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| NRVTS245ESFT1G |
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Виробник: ONSEMI
Category: SMD Schottky diodes
Description: Diode: Schottky rectifying; SOD123F; SMD; 45V; 2A; reel,tape
Type of diode: Schottky rectifying
Mounting: SMD
Max. off-state voltage: 45V
Load current: 2A
Semiconductor structure: single diode
Case: SOD123F
Max. forward voltage: 0.65V
Max. load current: 4A
Max. forward impulse current: 50A
Kind of package: reel; tape
Application: automotive industry
Category: SMD Schottky diodes
Description: Diode: Schottky rectifying; SOD123F; SMD; 45V; 2A; reel,tape
Type of diode: Schottky rectifying
Mounting: SMD
Max. off-state voltage: 45V
Load current: 2A
Semiconductor structure: single diode
Case: SOD123F
Max. forward voltage: 0.65V
Max. load current: 4A
Max. forward impulse current: 50A
Kind of package: reel; tape
Application: automotive industry
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| NRVTS1545EMFST3G |
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Виробник: ONSEMI
Category: SMD Schottky diodes
Description: Diode: Schottky rectifying; DFN5; SMD; 45V; 15A; reel,tape
Type of diode: Schottky rectifying
Mounting: SMD
Max. off-state voltage: 45V
Load current: 15A
Semiconductor structure: single diode
Case: DFN5
Max. forward voltage: 0.6V
Max. load current: 30A
Max. forward impulse current: 210A
Kind of package: reel; tape
Application: automotive industry
Category: SMD Schottky diodes
Description: Diode: Schottky rectifying; DFN5; SMD; 45V; 15A; reel,tape
Type of diode: Schottky rectifying
Mounting: SMD
Max. off-state voltage: 45V
Load current: 15A
Semiconductor structure: single diode
Case: DFN5
Max. forward voltage: 0.6V
Max. load current: 30A
Max. forward impulse current: 210A
Kind of package: reel; tape
Application: automotive industry
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| NRVB1045MFST1G |
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Виробник: ONSEMI
Category: SMD Schottky diodes
Description: Diode: Schottky rectifying; DFN5; SMD; 45V; 10A; reel,tape
Type of diode: Schottky rectifying
Mounting: SMD
Max. off-state voltage: 45V
Load current: 10A
Semiconductor structure: single diode
Case: DFN5
Max. forward voltage: 0.75V
Max. forward impulse current: 150A
Kind of package: reel; tape
Application: automotive industry
Max. load current: 20A
Category: SMD Schottky diodes
Description: Diode: Schottky rectifying; DFN5; SMD; 45V; 10A; reel,tape
Type of diode: Schottky rectifying
Mounting: SMD
Max. off-state voltage: 45V
Load current: 10A
Semiconductor structure: single diode
Case: DFN5
Max. forward voltage: 0.75V
Max. forward impulse current: 150A
Kind of package: reel; tape
Application: automotive industry
Max. load current: 20A
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| NRVB1045MFST3G |
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Виробник: ONSEMI
Category: SMD Schottky diodes
Description: Diode: Schottky rectifying; DFN5; SMD; 45V; 10A; reel,tape
Type of diode: Schottky rectifying
Mounting: SMD
Max. off-state voltage: 45V
Load current: 10A
Semiconductor structure: single diode
Case: DFN5
Max. forward voltage: 0.75V
Max. forward impulse current: 150A
Kind of package: reel; tape
Application: automotive industry
Max. load current: 20A
Category: SMD Schottky diodes
Description: Diode: Schottky rectifying; DFN5; SMD; 45V; 10A; reel,tape
Type of diode: Schottky rectifying
Mounting: SMD
Max. off-state voltage: 45V
Load current: 10A
Semiconductor structure: single diode
Case: DFN5
Max. forward voltage: 0.75V
Max. forward impulse current: 150A
Kind of package: reel; tape
Application: automotive industry
Max. load current: 20A
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| NRVTS1245EMFST1G |
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Виробник: ONSEMI
Category: SMD Schottky diodes
Description: Diode: Schottky rectifying; DFN5; SMD; 45V; 12A; reel,tape
Type of diode: Schottky rectifying
Mounting: SMD
Max. off-state voltage: 45V
Load current: 12A
Semiconductor structure: single diode
Case: DFN5
Max. forward voltage: 0.6V
Max. load current: 24A
Max. forward impulse current: 210A
Kind of package: reel; tape
Application: automotive industry
Category: SMD Schottky diodes
Description: Diode: Schottky rectifying; DFN5; SMD; 45V; 12A; reel,tape
Type of diode: Schottky rectifying
Mounting: SMD
Max. off-state voltage: 45V
Load current: 12A
Semiconductor structure: single diode
Case: DFN5
Max. forward voltage: 0.6V
Max. load current: 24A
Max. forward impulse current: 210A
Kind of package: reel; tape
Application: automotive industry
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| NRVTS1245EMFST3G |
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Виробник: ONSEMI
Category: SMD Schottky diodes
Description: Diode: Schottky rectifying; DFN5; SMD; 45V; 12A; reel,tape
Type of diode: Schottky rectifying
Mounting: SMD
Max. off-state voltage: 45V
Load current: 12A
Semiconductor structure: single diode
Case: DFN5
Max. forward voltage: 0.6V
Max. load current: 24A
Max. forward impulse current: 210A
Kind of package: reel; tape
Application: automotive industry
Category: SMD Schottky diodes
Description: Diode: Schottky rectifying; DFN5; SMD; 45V; 12A; reel,tape
Type of diode: Schottky rectifying
Mounting: SMD
Max. off-state voltage: 45V
Load current: 12A
Semiconductor structure: single diode
Case: DFN5
Max. forward voltage: 0.6V
Max. load current: 24A
Max. forward impulse current: 210A
Kind of package: reel; tape
Application: automotive industry
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| NRVTS1545EMFST1G |
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Виробник: ONSEMI
Category: SMD Schottky diodes
Description: Diode: Schottky rectifying; DFN5; SMD; 45V; 15A; reel,tape
Type of diode: Schottky rectifying
Mounting: SMD
Max. off-state voltage: 45V
Load current: 15A
Semiconductor structure: single diode
Case: DFN5
Max. forward voltage: 0.6V
Max. load current: 30A
Max. forward impulse current: 210A
Kind of package: reel; tape
Application: automotive industry
Category: SMD Schottky diodes
Description: Diode: Schottky rectifying; DFN5; SMD; 45V; 15A; reel,tape
Type of diode: Schottky rectifying
Mounting: SMD
Max. off-state voltage: 45V
Load current: 15A
Semiconductor structure: single diode
Case: DFN5
Max. forward voltage: 0.6V
Max. load current: 30A
Max. forward impulse current: 210A
Kind of package: reel; tape
Application: automotive industry
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| NRVBB40L45CTT4G |
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Виробник: ONSEMI
Category: SMD Schottky diodes
Description: Diode: Schottky rectifying; D2PAK; SMD; 45V; 10Ax2; reel,tape
Kind of package: reel; tape
Type of diode: Schottky rectifying
Mounting: SMD
Max. forward voltage: 0.68V
Load current: 10A x2
Max. load current: 20A
Max. off-state voltage: 45V
Max. forward impulse current: 200A
Application: automotive industry
Semiconductor structure: common cathode; double
Case: D2PAK
Category: SMD Schottky diodes
Description: Diode: Schottky rectifying; D2PAK; SMD; 45V; 10Ax2; reel,tape
Kind of package: reel; tape
Type of diode: Schottky rectifying
Mounting: SMD
Max. forward voltage: 0.68V
Load current: 10A x2
Max. load current: 20A
Max. off-state voltage: 45V
Max. forward impulse current: 200A
Application: automotive industry
Semiconductor structure: common cathode; double
Case: D2PAK
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| NRVTSAF345T3G |
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Виробник: ONSEMI
Category: SMD Schottky diodes
Description: Diode: Schottky rectifying; SMA flat; SMD; 45V; 3A; reel,tape
Kind of package: reel; tape
Type of diode: Schottky rectifying
Mounting: SMD
Max. forward voltage: 0.63V
Load current: 3A
Max. off-state voltage: 45V
Application: automotive industry
Semiconductor structure: single diode
Case: SMA flat
Category: SMD Schottky diodes
Description: Diode: Schottky rectifying; SMA flat; SMD; 45V; 3A; reel,tape
Kind of package: reel; tape
Type of diode: Schottky rectifying
Mounting: SMD
Max. forward voltage: 0.63V
Load current: 3A
Max. off-state voltage: 45V
Application: automotive industry
Semiconductor structure: single diode
Case: SMA flat
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| HCPL4503SDM |
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Виробник: ONSEMI
Category: Optocouplers - analog output
Description: Optocoupler; SMD; Ch: 1; OUT: transistor; Uinsul: 5kV; Gull wing 8
Type of optocoupler: optocoupler
Mounting: SMD
Number of channels: 1
Kind of output: transistor
Insulation voltage: 5kV
Case: Gull wing 8
Max. off-state voltage: 5V
Number of pins: 8
Operating temperature: -40...100°C
Manufacturer series: HCPL4503M
Load current: 16mA
Max. load current: 50mA
Category: Optocouplers - analog output
Description: Optocoupler; SMD; Ch: 1; OUT: transistor; Uinsul: 5kV; Gull wing 8
Type of optocoupler: optocoupler
Mounting: SMD
Number of channels: 1
Kind of output: transistor
Insulation voltage: 5kV
Case: Gull wing 8
Max. off-state voltage: 5V
Number of pins: 8
Operating temperature: -40...100°C
Manufacturer series: HCPL4503M
Load current: 16mA
Max. load current: 50mA
на замовлення 3000 шт:
термін постачання 21-30 дні (днів)| Кількість | Ціна |
|---|---|
| 1000+ | 38.99 грн |
| FQB8N90CTM |
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Виробник: ONSEMI
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 900V; 3.8A; Idm: 25A; 171W; D2PAK
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 900V
Drain current: 3.8A
Pulsed drain current: 25A
Power dissipation: 171W
Case: D2PAK
Gate-source voltage: ±30V
On-state resistance: 1.9Ω
Mounting: SMD
Gate charge: 45nC
Kind of package: reel; tape
Kind of channel: enhancement
Technology: QFET®
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 900V; 3.8A; Idm: 25A; 171W; D2PAK
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 900V
Drain current: 3.8A
Pulsed drain current: 25A
Power dissipation: 171W
Case: D2PAK
Gate-source voltage: ±30V
On-state resistance: 1.9Ω
Mounting: SMD
Gate charge: 45nC
Kind of package: reel; tape
Kind of channel: enhancement
Technology: QFET®
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| FQA8N90C-F109 |
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Виробник: ONSEMI
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 900V; 5.1A; Idm: 32A; 240W; TO3PN
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 900V
Drain current: 5.1A
Pulsed drain current: 32A
Power dissipation: 240W
Case: TO3PN
Gate-source voltage: ±30V
On-state resistance: 1.9Ω
Mounting: THT
Gate charge: 45nC
Kind of package: tube
Kind of channel: enhancement
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 900V; 5.1A; Idm: 32A; 240W; TO3PN
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 900V
Drain current: 5.1A
Pulsed drain current: 32A
Power dissipation: 240W
Case: TO3PN
Gate-source voltage: ±30V
On-state resistance: 1.9Ω
Mounting: THT
Gate charge: 45nC
Kind of package: tube
Kind of channel: enhancement
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| MJD32RLG |
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Виробник: ONSEMI
Category: PNP SMD transistors
Description: Transistor: PNP; bipolar; 40V; 3A; 15W; DPAK
Type of transistor: PNP
Polarisation: bipolar
Collector-emitter voltage: 40V
Collector current: 3A
Power dissipation: 15W
Case: DPAK
Current gain: 10...50
Mounting: SMD
Kind of package: reel; tape
Frequency: 3MHz
Category: PNP SMD transistors
Description: Transistor: PNP; bipolar; 40V; 3A; 15W; DPAK
Type of transistor: PNP
Polarisation: bipolar
Collector-emitter voltage: 40V
Collector current: 3A
Power dissipation: 15W
Case: DPAK
Current gain: 10...50
Mounting: SMD
Kind of package: reel; tape
Frequency: 3MHz
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| MJD32T4G |
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Виробник: ONSEMI
Category: PNP SMD transistors
Description: Transistor: PNP; bipolar; 40V; 3A; 15W; DPAK
Type of transistor: PNP
Polarisation: bipolar
Collector-emitter voltage: 40V
Collector current: 3A
Power dissipation: 15W
Case: DPAK
Current gain: 10...50
Mounting: SMD
Kind of package: reel; tape
Frequency: 3MHz
Category: PNP SMD transistors
Description: Transistor: PNP; bipolar; 40V; 3A; 15W; DPAK
Type of transistor: PNP
Polarisation: bipolar
Collector-emitter voltage: 40V
Collector current: 3A
Power dissipation: 15W
Case: DPAK
Current gain: 10...50
Mounting: SMD
Kind of package: reel; tape
Frequency: 3MHz
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| NJVMJD32T4G |
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Виробник: ONSEMI
Category: PNP SMD transistors
Description: Transistor: PNP; bipolar; 40V; 3A; 15W; DPAK; automotive industry
Type of transistor: PNP
Polarisation: bipolar
Collector-emitter voltage: 40V
Collector current: 3A
Power dissipation: 15W
Case: DPAK
Current gain: 10...50
Mounting: SMD
Kind of package: reel; tape
Frequency: 3MHz
Application: automotive industry
Category: PNP SMD transistors
Description: Transistor: PNP; bipolar; 40V; 3A; 15W; DPAK; automotive industry
Type of transistor: PNP
Polarisation: bipolar
Collector-emitter voltage: 40V
Collector current: 3A
Power dissipation: 15W
Case: DPAK
Current gain: 10...50
Mounting: SMD
Kind of package: reel; tape
Frequency: 3MHz
Application: automotive industry
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| GRUMMBT3904LT1G |
на замовлення 42000 шт:
термін постачання 21-30 дні (днів)| Кількість | Ціна |
|---|---|
| 6000+ | 1.09 грн |
| FDC8886 |
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Виробник: ONSEMI
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 30V; 6.5A; Idm: 25A; 1.6W
Type of transistor: N-MOSFET
Technology: PowerTrench®
Polarisation: unipolar
Drain-source voltage: 30V
Drain current: 6.5A
Pulsed drain current: 25A
Power dissipation: 1.6W
Case: SuperSOT-6
Gate-source voltage: ±20V
On-state resistance: 36mΩ
Mounting: SMD
Gate charge: 7.4nC
Kind of package: reel; tape
Kind of channel: enhancement
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 30V; 6.5A; Idm: 25A; 1.6W
Type of transistor: N-MOSFET
Technology: PowerTrench®
Polarisation: unipolar
Drain-source voltage: 30V
Drain current: 6.5A
Pulsed drain current: 25A
Power dissipation: 1.6W
Case: SuperSOT-6
Gate-source voltage: ±20V
On-state resistance: 36mΩ
Mounting: SMD
Gate charge: 7.4nC
Kind of package: reel; tape
Kind of channel: enhancement
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| MC3303DR2G |
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Виробник: ONSEMI
Category: SMD operational amplifiers
Description: IC: operational amplifier; SO14; ±1.5÷18VDC,3÷36VDC; reel,tape
Mounting: SMT
Operating temperature: -40...85°C
Input offset voltage: 10mV
Slew rate: 0.6V/μs
Voltage supply range: ± 1.5...18V DC; 3...36V DC
Kind of package: reel; tape
Case: SO14
Type of integrated circuit: operational amplifier
Number of channels: quad
Input offset current: 250nA
Category: SMD operational amplifiers
Description: IC: operational amplifier; SO14; ±1.5÷18VDC,3÷36VDC; reel,tape
Mounting: SMT
Operating temperature: -40...85°C
Input offset voltage: 10mV
Slew rate: 0.6V/μs
Voltage supply range: ± 1.5...18V DC; 3...36V DC
Kind of package: reel; tape
Case: SO14
Type of integrated circuit: operational amplifier
Number of channels: quad
Input offset current: 250nA
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| BD439G |
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Виробник: ONSEMI
Category: NPN THT transistors
Description: Transistor: NPN; bipolar; 60V; 4A; 36W; TO225
Type of transistor: NPN
Polarisation: bipolar
Collector-emitter voltage: 60V
Collector current: 4A
Case: TO225
Mounting: THT
Frequency: 3MHz
Current gain: 40...475
Power dissipation: 36W
Kind of package: bulk
Category: NPN THT transistors
Description: Transistor: NPN; bipolar; 60V; 4A; 36W; TO225
Type of transistor: NPN
Polarisation: bipolar
Collector-emitter voltage: 60V
Collector current: 4A
Case: TO225
Mounting: THT
Frequency: 3MHz
Current gain: 40...475
Power dissipation: 36W
Kind of package: bulk
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| MMSD4148 |
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Виробник: ONSEMI
Category: SMD universal diodes
Description: Diode: switching; SMD; 100V; 0.2A; 4ns; SOD123; Ifsm: 2A; 400mW
Type of diode: switching
Mounting: SMD
Max. off-state voltage: 100V
Load current: 0.2A
Reverse recovery time: 4ns
Semiconductor structure: single diode
Case: SOD123
Max. forward impulse current: 2A
Kind of package: reel; tape
Power dissipation: 0.4W
Capacitance: 4pF
Features of semiconductor devices: fast switching
Category: SMD universal diodes
Description: Diode: switching; SMD; 100V; 0.2A; 4ns; SOD123; Ifsm: 2A; 400mW
Type of diode: switching
Mounting: SMD
Max. off-state voltage: 100V
Load current: 0.2A
Reverse recovery time: 4ns
Semiconductor structure: single diode
Case: SOD123
Max. forward impulse current: 2A
Kind of package: reel; tape
Power dissipation: 0.4W
Capacitance: 4pF
Features of semiconductor devices: fast switching
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| SZNUP2105LT1G |
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Виробник: ONSEMI
Category: Protection diodes - arrays
Description: Diode: TVS array; 26.2÷32V; 350W; bidirectional,double; SOT23
Type of diode: TVS array
Breakdown voltage: 26.2...32V
Peak pulse power dissipation: 0.35kW
Semiconductor structure: bidirectional; double
Mounting: SMD
Case: SOT23
Max. off-state voltage: 24V
Number of channels: 2
Kind of package: reel; tape
Application: automotive industry
Version: ESD
Category: Protection diodes - arrays
Description: Diode: TVS array; 26.2÷32V; 350W; bidirectional,double; SOT23
Type of diode: TVS array
Breakdown voltage: 26.2...32V
Peak pulse power dissipation: 0.35kW
Semiconductor structure: bidirectional; double
Mounting: SMD
Case: SOT23
Max. off-state voltage: 24V
Number of channels: 2
Kind of package: reel; tape
Application: automotive industry
Version: ESD
на замовлення 1247 шт:
термін постачання 21-30 дні (днів)| Кількість | Ціна |
|---|---|
| 39+ | 11.19 грн |
| 49+ | 8.31 грн |
| 58+ | 6.91 грн |
| 100+ | 6.36 грн |
| 250+ | 5.71 грн |
| 500+ | 5.28 грн |
| 1000+ | 4.88 грн |
| MLISZNUP2105LT1G |
на замовлення 120000 шт:
термін постачання 21-30 дні (днів)| Кількість | Ціна |
|---|---|
| 3000+ | 4.65 грн |
| RS1G |
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Виробник: ONSEMI
Category: SMD universal diodes
Description: Diode: rectifying; SMD; 400V; 1A; 150ns; DO214AC,SMA; Ufmax: 1.3V
Type of diode: rectifying
Mounting: SMD
Max. off-state voltage: 0.4kV
Load current: 1A
Reverse recovery time: 150ns
Semiconductor structure: single diode
Features of semiconductor devices: fast switching; glass passivated
Capacitance: 10pF
Case: DO214AC; SMA
Max. forward voltage: 1.3V
Max. forward impulse current: 30A
Kind of package: reel; tape
Power dissipation: 1.19W
Category: SMD universal diodes
Description: Diode: rectifying; SMD; 400V; 1A; 150ns; DO214AC,SMA; Ufmax: 1.3V
Type of diode: rectifying
Mounting: SMD
Max. off-state voltage: 0.4kV
Load current: 1A
Reverse recovery time: 150ns
Semiconductor structure: single diode
Features of semiconductor devices: fast switching; glass passivated
Capacitance: 10pF
Case: DO214AC; SMA
Max. forward voltage: 1.3V
Max. forward impulse current: 30A
Kind of package: reel; tape
Power dissipation: 1.19W
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