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BZX84C20LT1G BZX84C20LT1G ONSEMI pVersion=0046&contRep=ZT&docId=005056AB281E1EDFB4CD843106A6E0D8&compId=BZX84B_BZX84C.PDF?ci_sign=43024a7d3781c2291565a68c90fd78feea6ddb17 Category: SMD Zener diodes
Description: Diode: Zener; 0.3W; 20V; SMD; reel,tape; SOT23; single diode; 0.05uA
Type of diode: Zener
Power dissipation: 0.3W
Zener voltage: 20V
Mounting: SMD
Tolerance: ±5%
Kind of package: reel; tape
Case: SOT23
Semiconductor structure: single diode
Leakage current: 50nA
Manufacturer series: BZX84C
на замовлення 3909 шт:
термін постачання 21-30 дні (днів)
63+7.02 грн
84+4.89 грн
105+3.91 грн
188+2.17 грн
239+1.71 грн
500+1.15 грн
1000+1.05 грн
1500+1.04 грн
Мінімальне замовлення: 63
В кошику  од. на суму  грн.
SZBZX84C20LT1G ONSEMI pVersion=0046&contRep=ZT&docId=005056AB281E1EDFB4CD843106A6E0D8&compId=BZX84B_BZX84C.PDF?ci_sign=43024a7d3781c2291565a68c90fd78feea6ddb17 Category: SMD Zener diodes
Description: Diode: Zener; 0.3W; 20V; SMD; reel,tape; SOT23; single diode; 0.05uA
Type of diode: Zener
Power dissipation: 0.3W
Zener voltage: 20V
Mounting: SMD
Tolerance: ±5%
Kind of package: reel; tape
Case: SOT23
Semiconductor structure: single diode
Leakage current: 50nA
Manufacturer series: BZX84C
Application: automotive industry
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SZBZX84C20ET1G ONSEMI pVersion=0046&contRep=ZT&docId=005056AB281E1EDFB4CDF40CF92A80D8&compId=BZX84CxxET1G.PDF?ci_sign=20d888150f9be2b3e7308e1b8fa08e23f61272cc Category: SMD Zener diodes
Description: Diode: Zener; 0.3W; 20V; SMD; reel,tape; SOT23; single diode
Type of diode: Zener
Power dissipation: 0.3W
Zener voltage: 20V
Mounting: SMD
Tolerance: ±6%
Kind of package: reel; tape
Case: SOT23
Semiconductor structure: single diode
Manufacturer series: BZX84CxxET1G
Application: automotive industry
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SZBZX84C30ET1G ONSEMI BZX84CxxET1G.PDF Category: SMD Zener diodes
Description: Diode: Zener; 0.3W; 30V; SMD; reel,tape; SOT23; single diode
Type of diode: Zener
Power dissipation: 0.3W
Zener voltage: 30V
Mounting: SMD
Tolerance: ±7%
Kind of package: reel; tape
Case: SOT23
Semiconductor structure: single diode
Manufacturer series: BZX84CxxET1G
Application: automotive industry
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SZBZX84C30LT1G ONSEMI BZX84B_BZX84C.PDF Category: SMD Zener diodes
Description: Diode: Zener; 0.3W; 30V; SMD; reel,tape; SOT23; single diode; 0.05uA
Type of diode: Zener
Power dissipation: 0.3W
Zener voltage: 30V
Mounting: SMD
Tolerance: ±5%
Kind of package: reel; tape
Case: SOT23
Semiconductor structure: single diode
Leakage current: 50nA
Manufacturer series: BZX84C
Application: automotive industry
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D45VH10G D45VH10G ONSEMI D45VH10G.PDF Category: PNP THT transistors
Description: Transistor: PNP; bipolar; 80V; 15A; 83W; TO220AB
Type of transistor: PNP
Polarisation: bipolar
Collector-emitter voltage: 80V
Collector current: 15A
Power dissipation: 83W
Case: TO220AB
Current gain: 20
Mounting: THT
Kind of package: tube
Frequency: 50MHz
на замовлення 221 шт:
термін постачання 21-30 дні (днів)
7+67.53 грн
14+31.11 грн
50+27.85 грн
Мінімальне замовлення: 7
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FDS4501h FDS4501h ONSEMI FAIRS34628-1.pdf?t.download=true&u=5oefqw fds4501h-d.pdf Category: Multi channel transistors
Description: Transistor: N/P-MOSFET; unipolar; 30/-20V; 9.3/-5.6A; 2.5W; SO8
Power dissipation: 2.5W
Drain current: 9.3/-5.6A
Gate-source voltage: ±20/±8V
Drain-source voltage: 30/-20V
Kind of package: reel; tape
On-state resistance: 80/29mΩ
Technology: PowerTrench®
Type of transistor: N/P-MOSFET
Polarisation: unipolar
Kind of channel: enhancement
Case: SO8
Gate charge: 21/27nC
Mounting: SMD
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MMUN2114LT1G MMUN2114LT1G ONSEMI pVersion=0046&contRep=ZT&docId=005056AB752F1EE7A0FBCEB303FB2749&compId=MMUN2114.PDF?ci_sign=1faa3e69c4f082a2adc844bd2107a4d5634eab01 Category: PNP SMD transistors
Description: Transistor: PNP; bipolar; BRT; 50V; 0.1A; 0.246W; SOT23,TO236AB
Type of transistor: PNP
Polarisation: bipolar
Kind of transistor: BRT
Collector-emitter voltage: 50V
Collector current: 0.1A
Power dissipation: 0.246W
Case: SOT23; TO236AB
Mounting: SMD
Kind of package: reel; tape
Base resistor: 10kΩ
Base-emitter resistor: 47kΩ
Current gain: 80...140
на замовлення 2436 шт:
термін постачання 21-30 дні (днів)
46+9.65 грн
77+5.29 грн
109+3.76 грн
125+3.26 грн
500+2.36 грн
1000+2.07 грн
1500+1.92 грн
Мінімальне замовлення: 46
В кошику  од. на суму  грн.
MMUN2114LT3G MMUN2114LT3G ONSEMI dta114y-d.pdf Category: PNP SMD transistors
Description: Transistor: PNP; bipolar; BRT; 50V; 0.1A; 0.246W; SOT23,TO236AB
Type of transistor: PNP
Polarisation: bipolar
Kind of transistor: BRT
Collector-emitter voltage: 50V
Collector current: 0.1A
Power dissipation: 0.246W
Case: SOT23; TO236AB
Mounting: SMD
Kind of package: reel; tape
Base resistor: 10kΩ
Base-emitter resistor: 47kΩ
Current gain: 80...140
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SMMUN2114LT1G SMMUN2114LT1G ONSEMI dta114y-d.pdf Category: PNP SMD transistors
Description: Transistor: PNP; bipolar; BRT; 50V; 0.1A; 0.246W; SOT23,TO236AB
Type of transistor: PNP
Polarisation: bipolar
Kind of transistor: BRT
Collector-emitter voltage: 50V
Collector current: 0.1A
Power dissipation: 0.246W
Case: SOT23; TO236AB
Mounting: SMD
Kind of package: reel; tape
Base resistor: 10kΩ
Application: automotive industry
Base-emitter resistor: 47kΩ
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MMBD2837LT1G MMBD2837LT1G ONSEMI pVersion=0046&contRep=ZT&docId=005056AB82531ED998CD38A84AE97820&compId=MMBD2837_8.pdf?ci_sign=50204fe3b7b73e3b0b616b2e8be0f02eced94911 Category: SMD universal diodes
Description: Diode: switching; SMD; 75V; 0.15A; 4ns; SOT23; Ufmax: 1.2V; 225mW
Type of diode: switching
Mounting: SMD
Max. off-state voltage: 75V
Load current: 0.15A
Reverse recovery time: 4ns
Semiconductor structure: common cathode; double
Case: SOT23
Max. forward voltage: 1.2V
Kind of package: reel; tape
Capacitance: 4pF
Power dissipation: 0.225W
Max. load current: 0.45A
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NTHL185N60S5H ONSEMI nthl185n60s5h-d.pdf Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 600V; 15A; Idm: 53A; 116W; TO247-3
Mounting: THT
Case: TO247-3
Power dissipation: 116W
Kind of package: tube
Kind of channel: enhancement
Type of transistor: N-MOSFET
Gate charge: 25nC
On-state resistance: 0.185Ω
Drain current: 15A
Gate-source voltage: ±30V
Pulsed drain current: 53A
Drain-source voltage: 600V
Polarisation: unipolar
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NTMT185N60S5H ONSEMI ntmt185n60s5h-d.pdf Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 600V; 15A; Idm: 53A; 116W; TDFN4
Mounting: SMD
Case: TDFN4
Power dissipation: 116W
Kind of package: reel; tape
Kind of channel: enhancement
Type of transistor: N-MOSFET
Gate charge: 25nC
On-state resistance: 0.185Ω
Drain current: 15A
Gate-source voltage: ±30V
Pulsed drain current: 53A
Drain-source voltage: 600V
Polarisation: unipolar
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PZTA42T1G PZTA42T1G ONSEMI PZTA42T1G.PDF Category: NPN SMD transistors
Description: Transistor: NPN; bipolar; 300V; 0.5A; 1.5W; SOT223-4,TO261-4
Type of transistor: NPN
Polarisation: bipolar
Collector-emitter voltage: 300V
Collector current: 0.5A
Power dissipation: 1.5W
Case: SOT223-4; TO261-4
Current gain: 40
Mounting: SMD
Kind of package: reel; tape
Frequency: 50MHz
на замовлення 497 шт:
термін постачання 21-30 дні (днів)
17+27.19 грн
24+17.10 грн
50+12.87 грн
100+11.40 грн
250+9.85 грн
Мінімальне замовлення: 17
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SPZTA42T1G ONSEMI pzta42t1-d.pdf Category: NPN SMD transistors
Description: Transistor: NPN; bipolar; 300V; 0.5A; 1.5W; SOT223-4,TO261-4
Type of transistor: NPN
Polarisation: bipolar
Collector-emitter voltage: 300V
Collector current: 0.5A
Power dissipation: 1.5W
Case: SOT223-4; TO261-4
Current gain: 40
Mounting: SMD
Kind of package: tape
Frequency: 50MHz
Application: automotive industry
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FCD1300N80Z ONSEMI fcd1300n80z-d.pdf Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 800V; 4A; Idm: 12A; 52W; DPAK
Mounting: SMD
Kind of channel: enhancement
Type of transistor: N-MOSFET
Polarisation: unipolar
Gate charge: 16.2nC
On-state resistance: 1.3Ω
Drain current: 4A
Pulsed drain current: 12A
Gate-source voltage: ±20V
Power dissipation: 52W
Drain-source voltage: 800V
Kind of package: reel; tape
Case: DPAK
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NCV4299CD133R2G ONSEMI ncv4299c-d.pdf Category: LDO fixed voltage regulators
Description: IC: voltage regulator; LDO,linear,fixed; 3.3V; 0.15A; SO8; SMD
Mounting: SMD
Kind of voltage regulator: fixed; LDO; linear
Type of integrated circuit: voltage regulator
Output voltage: 3.3V
Output current: 0.15A
Number of channels: 1
Application: automotive industry
Kind of package: reel; tape
Case: SO8
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BZX84C10LT1G BZX84C10LT1G ONSEMI BZX84B_BZX84C.PDF Category: SMD Zener diodes
Description: Diode: Zener; 0.3W; 10V; SMD; reel,tape; SOT23; single diode; 0.2uA
Type of diode: Zener
Power dissipation: 0.3W
Zener voltage: 10V
Mounting: SMD
Tolerance: ±5%
Kind of package: reel; tape
Case: SOT23
Semiconductor structure: single diode
Leakage current: 0.2µA
Manufacturer series: BZX84C
на замовлення 5446 шт:
термін постачання 21-30 дні (днів)
72+6.14 грн
112+3.66 грн
166+2.46 грн
196+2.08 грн
250+1.69 грн
500+1.44 грн
1000+1.25 грн
3000+1.22 грн
Мінімальне замовлення: 72
В кошику  од. на суму  грн.
2SB1123S-TD-E 2SB1123S-TD-E ONSEMI en1727-d.pdf Category: PNP SMD transistors
Description: Transistor: PNP; bipolar; 50V; 2A; 0.5W; SOT89
Type of transistor: PNP
Polarisation: bipolar
Collector-emitter voltage: 50V
Collector current: 2A
Power dissipation: 0.5W
Case: SOT89
Mounting: SMD
Kind of package: reel; tape
Frequency: 150MHz
Current gain: 140...280
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NCP1012ST100T3G NCP1012ST100T3G ONSEMI ncp1010-d.pdf Category: Voltage regulators - PWM circuits
Description: IC: PMIC; AC/DC switcher,PWM controller; 250mA; 100kHz; Ch: 1; 11Ω
Type of integrated circuit: PMIC
Kind of integrated circuit: AC/DC switcher; PWM controller
Output current: 0.25A
Frequency: 0.1MHz
Mounting: SMD
Case: SOT223
Topology: flyback
Number of channels: 1
Operating temperature: -40...125°C
On-state resistance: 11Ω
Operating voltage: 8.5...10V DC
Duty cycle factor: 0...72%
Kind of package: reel; tape
Application: SMPS
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NCP1072STAT3G ONSEMI ncp1070-d.pdf Category: Voltage regulators - DC/DC circuits
Description: IC: PMIC; AC/DC switcher,PWM controller; SOT223; flyback
Type of integrated circuit: PMIC
Kind of integrated circuit: AC/DC switcher; PWM controller
Output current: 0.25A
Frequency: 59...71kHz
Mounting: SMD
Case: SOT223
Topology: flyback
Number of channels: 1
Operating temperature: -40...125°C
On-state resistance: 16Ω
Operating voltage: 6.3...10V DC
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NCP1072STBT3G ONSEMI ncp1070-d.pdf Category: Voltage regulators - DC/DC circuits
Description: IC: PMIC; AC/DC switcher,PWM controller; SOT223; flyback
Type of integrated circuit: PMIC
Kind of integrated circuit: AC/DC switcher; PWM controller
Output current: 0.25A
Frequency: 90...110kHz
Mounting: SMD
Case: SOT223
Topology: flyback
Number of channels: 1
Operating temperature: -40...125°C
On-state resistance: 16Ω
Operating voltage: 6.3...10V DC
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NCV59745AMW180TAG ONSEMI ncv59745-d.pdf Category: LDO fixed voltage regulators
Description: IC: voltage regulator; LDO,linear,fixed; 1.8V; 3A; SMD; reel,tape
Kind of package: reel; tape
Kind of voltage regulator: fixed; LDO; linear
Type of integrated circuit: voltage regulator
Number of channels: 1
Output voltage: 1.8V
Output current: 3A
Application: automotive industry
Mounting: SMD
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NLU2G17AMX1TCG ONSEMI nlu2g17-d.pdf Category: Buffers, transceivers, drivers
Description: IC: digital; buffer,non-inverting; Ch: 2; CMOS; SMD; ULLGA6; 40uA
Type of integrated circuit: digital
Kind of integrated circuit: buffer; non-inverting
Number of channels: 2
Technology: CMOS
Mounting: SMD
Case: ULLGA6
Supply voltage: 1.65...5.5V DC
Kind of package: reel; tape
Kind of input: with Schmitt trigger
Operating temperature: -55...125°C
Quiescent current: 40µA
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NLX2G17AMX1TCG ONSEMI NLX2G17_Rev2_Oct2012.pdf Category: Buffers, transceivers, drivers
Description: IC: digital; buffer,non-inverting; Ch: 2; CMOS; SMD; ULLGA6
Type of integrated circuit: digital
Kind of integrated circuit: buffer; non-inverting
Number of channels: 2
Technology: CMOS
Mounting: SMD
Case: ULLGA6
Supply voltage: 1.65...5.5V DC
Kind of package: reel; tape
Kind of input: with Schmitt trigger
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1N5369BG ONSEMI pVersion=0046&contRep=ZT&docId=005056AB281E1EDFB4B706AA2B43C0D8&compId=1N53xx.PDF?ci_sign=2dd0986a0cecc581986dbc6f69ac36c2a8667bd6 Category: THT Zener diodes
Description: Diode: Zener; 5W; 51V; bulk; CASE017AA; single diode; 0.5uA; 1N53xxB
Mounting: THT
Tolerance: ±5%
Semiconductor structure: single diode
Type of diode: Zener
Leakage current: 0.5µA
Case: CASE017AA
Kind of package: bulk
Power dissipation: 5W
Zener voltage: 51V
Manufacturer series: 1N53xxB
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2SB1201S-TL-E ONSEMI en2112-d.html Category: PNP SMD transistors
Description: Transistor: PNP; bipolar; 50V; 2A; 0.8W; DPAK
Mounting: SMD
Case: DPAK
Kind of package: reel; tape
Type of transistor: PNP
Power dissipation: 0.8W
Collector current: 2A
Collector-emitter voltage: 50V
Current gain: 140...280
Frequency: 150MHz
Polarisation: bipolar
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FDPF320N06L FDPF320N06L ONSEMI fdpf320n06l-d.pdf Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 60V; 15A; Idm: 84A; 26W; TO220FP
Type of transistor: N-MOSFET
Technology: PowerTrench®
Polarisation: unipolar
Drain-source voltage: 60V
Drain current: 15A
Pulsed drain current: 84A
Power dissipation: 26W
Case: TO220FP
Gate-source voltage: ±20V
On-state resistance: 25mΩ
Mounting: THT
Gate charge: 30.2nC
Kind of package: tube
Kind of channel: enhancement
Features of semiconductor devices: logic level
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NTTFS020N06CTAG ONSEMI NTTFS020N06C-D.PDF Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 60V; 27A; Idm: 128A; 15W; WDFN8
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 60V
Drain current: 27A
Pulsed drain current: 128A
Power dissipation: 15W
Case: WDFN8
Gate-source voltage: ±20V
On-state resistance: 20.3mΩ
Mounting: SMD
Gate charge: 5.8nC
Kind of package: reel; tape
Kind of channel: enhancement
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NVTFS020N06CTAG ONSEMI NVTFS020N06C-D.PDF Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 60V; 27A; Idm: 128A; 15W; WDFN8
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 60V
Drain current: 27A
Pulsed drain current: 128A
Power dissipation: 15W
Case: WDFN8
Gate-source voltage: ±20V
On-state resistance: 20.3mΩ
Mounting: SMD
Gate charge: 5.8nC
Kind of package: reel; tape
Kind of channel: enhancement
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NVTFWS020N06CTAG ONSEMI NVTFS020N06C-D.PDF Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 60V; 27A; Idm: 128A; 15W; WDFNW8
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 60V
Drain current: 27A
Pulsed drain current: 128A
Power dissipation: 15W
Case: WDFNW8
Gate-source voltage: ±20V
On-state resistance: 20.3mΩ
Mounting: SMD
Gate charge: 5.8nC
Kind of package: reel; tape
Kind of channel: enhancement
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MMSZ4702T1G MMSZ4702T1G ONSEMI pVersion=0046&contRep=ZT&docId=005056AB281E1EDFB4CFEB7388A7C0D8&compId=MMSZ4xxxT1G.PDF?ci_sign=a85907a4b31579eb401f684e4c002657dc7dfe7a Category: SMD Zener diodes
Description: Diode: Zener; 0.5W; 15V; SMD; reel,tape; SOD123; single diode
Mounting: SMD
Tolerance: ±5%
Kind of package: reel; tape
Semiconductor structure: single diode
Type of diode: Zener
Leakage current: 50nA
Power dissipation: 0.5W
Zener voltage: 15V
Case: SOD123
Manufacturer series: MMSZ4xxT1G
на замовлення 6556 шт:
термін постачання 21-30 дні (днів)
63+7.02 грн
97+4.23 грн
120+3.42 грн
139+2.93 грн
165+2.48 грн
250+1.98 грн
500+1.66 грн
1000+1.38 грн
Мінімальне замовлення: 63
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1SMA5934BT3G 1SMA5934BT3G ONSEMI pVersion=0046&contRep=ZT&docId=005056AB90B41EDC81949BABC3B320C7&compId=1SMA59xxBT3.PDF?ci_sign=ae78e9fa686988a769322b3766b51c193588ea67 Category: SMD Zener diodes
Description: Diode: Zener; 1.5W; 24V; SMD; reel,tape; SMA; single diode
Type of diode: Zener
Power dissipation: 1.5W
Zener voltage: 24V
Mounting: SMD
Tolerance: ±5%
Kind of package: reel; tape
Case: SMA
Semiconductor structure: single diode
Manufacturer series: 1SMA59xxBT3G
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MMBZ5248BLT1G MMBZ5248BLT1G ONSEMI pVersion=0046&contRep=ZT&docId=005056AB281E1EDFB4CAA5C0BD20A0D8&compId=MMBZ52xxBLT1G.PDF?ci_sign=e66b6ae8d428f13192cf8029f8987439859092fc Category: SMD Zener diodes
Description: Diode: Zener; 0.3W; 18V; SMD; reel,tape; SOT23; single diode; 0.1uA
Type of diode: Zener
Power dissipation: 0.3W
Zener voltage: 18V
Mounting: SMD
Tolerance: ±5%
Kind of package: reel; tape
Case: SOT23
Semiconductor structure: single diode
Leakage current: 0.1µA
Manufacturer series: MMBZ52xxBLT1G
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SZMMBZ5248BLT1G ONSEMI pVersion=0046&contRep=ZT&docId=005056AB281E1EDFB4CAA5C0BD20A0D8&compId=MMBZ52xxBLT1G.PDF?ci_sign=e66b6ae8d428f13192cf8029f8987439859092fc Category: SMD Zener diodes
Description: Diode: Zener; 0.3W; 18V; SMD; reel,tape; SOT23; single diode; 0.1uA
Type of diode: Zener
Power dissipation: 0.3W
Zener voltage: 18V
Mounting: SMD
Tolerance: ±5%
Kind of package: reel; tape
Case: SOT23
Semiconductor structure: single diode
Leakage current: 0.1µA
Manufacturer series: MMBZ52xxBLT1G
Application: automotive industry
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MOC3052M MOC3052M ONSEMI MOC3052M-ONS.PDF Category: Optotriacs
Description: Optotriac; 5.3kV; Uout: 600V; DIP6; MOC3052M
Type of optocoupler: optotriac
Insulation voltage: 5.3kV
Kind of output: without zero voltage crossing driver
Case: DIP6
Trigger current: 10mA
Mounting: THT
Output voltage: 600V
Manufacturer series: MOC3052M
на замовлення 73 шт:
термін постачання 21-30 дні (днів)
7+66.66 грн
11+39.91 грн
50+33.96 грн
Мінімальне замовлення: 7
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BAV99LT3G BAV99LT3G ONSEMI pVersion=0046&contRep=ZT&docId=005056AB90B41ED9B3F68A2206D2C0C4&compId=BAV99LT3G.PDF?ci_sign=5d3fb25daa8884041a840340031ab2de05997614 Category: SMD universal diodes
Description: Diode: switching; SMD; 100V; 0.215A; 6ns; SOT23; Ufmax: 1.75V; 225mW
Type of diode: switching
Mounting: SMD
Max. off-state voltage: 100V
Load current: 0.215A
Reverse recovery time: 6ns
Semiconductor structure: double series
Capacitance: 1.5pF
Case: SOT23
Max. forward voltage: 1.75V
Max. forward impulse current: 2A
Power dissipation: 0.225W
Kind of package: reel; tape
Max. load current: 0.45A
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SBAV99LT3G SBAV99LT3G ONSEMI bav99lt1-d.pdf Category: SMD universal diodes
Description: Diode: switching; SMD; 100V; 0.215A; 6ns; SOT23; Ufmax: 1.25V; 300mW
Type of diode: switching
Mounting: SMD
Max. off-state voltage: 100V
Load current: 0.215A
Reverse recovery time: 6ns
Semiconductor structure: double series
Capacitance: 1.5pF
Case: SOT23
Max. forward voltage: 1.25V
Max. forward impulse current: 2A
Leakage current: 50µA
Power dissipation: 0.3W
Kind of package: reel; tape
Application: automotive industry
на замовлення 10000 шт:
термін постачання 21-30 дні (днів)
63+7.02 грн
193+2.12 грн
218+1.87 грн
274+1.49 грн
500+1.26 грн
1000+1.22 грн
Мінімальне замовлення: 63
В кошику  од. на суму  грн.
1N5231BTR ONSEMI 1N52xxB.PDF Category: THT Zener diodes
Description: Diode: Zener; 0.5W; 5.1V; reel,tape; CASE017AG; single diode; 5uA
Type of diode: Zener
Power dissipation: 0.5W
Zener voltage: 5.1V
Kind of package: reel; tape
Case: CASE017AG
Mounting: THT
Tolerance: ±5%
Semiconductor structure: single diode
Leakage current: 5µA
Manufacturer series: 1N52xxB
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LM2575T-3.3G LM2575T-3.3G ONSEMI LM2575-ON-DTE.PDF Category: Voltage regulators - DC/DC circuits
Description: PMIC; DC/DC converter; Uin: 4.75÷40VDC; Uout: 3.3VDC; 1A; TO220-5
Input voltage: 4.75...40V DC
Output voltage: 3.3V DC
Output current: 1A
Case: TO220-5
Mounting: THT
Operating temperature: -40...125°C
Number of channels: 1
Type of integrated circuit: PMIC
Frequency: 42...63kHz
Topology: buck
Kind of package: tube
Kind of integrated circuit: DC/DC converter
на замовлення 41 шт:
термін постачання 21-30 дні (днів)
3+192.08 грн
10+118.90 грн
Мінімальне замовлення: 3
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LM2575TV-ADJG ONSEMI lm2575-d.pdf Category: Voltage regulators - DC/DC circuits
Description: PMIC; DC/DC converter; TO220-5; THT; tube
Type of integrated circuit: PMIC
Kind of integrated circuit: DC/DC converter
Case: TO220-5
Mounting: THT
Kind of package: tube
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MMBD1204 MMBD1204 ONSEMI ONSM-S-A0003587619-1.pdf?t.download=true&u=5oefqw Category: SMD universal diodes
Description: Diode: switching; SMD; 100V; 0.2A; 4ns; SOT23; Ufmax: 1.1V; Ifsm: 2A
Type of diode: switching
Mounting: SMD
Max. off-state voltage: 100V
Load current: 0.2A
Reverse recovery time: 4ns
Semiconductor structure: common cathode; double
Case: SOT23
Max. forward voltage: 1.1V
Kind of package: reel; tape
Leakage current: 0.1mA
Capacitance: 2pF
Power dissipation: 0.35W
Max. forward impulse current: 2A
на замовлення 1180 шт:
термін постачання 21-30 дні (днів)
32+14.03 грн
50+8.23 грн
73+5.62 грн
100+4.77 грн
250+3.88 грн
500+3.34 грн
1000+2.89 грн
Мінімальне замовлення: 32
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NVTFS003N04CTAG ONSEMI nvtfs003n04c-d.pdf Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 40V; 103A; Idm: 484A; 22W; WDFN8
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 40V
Drain current: 103A
Pulsed drain current: 484A
Power dissipation: 22W
Case: WDFN8
Gate-source voltage: ±20V
On-state resistance: 3.5mΩ
Mounting: SMD
Gate charge: 23nC
Kind of package: reel; tape
Kind of channel: enhancement
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1N5360BG ONSEMI pVersion=0046&contRep=ZT&docId=005056AB281E1EDFB4B706AA2B43C0D8&compId=1N53xx.PDF?ci_sign=2dd0986a0cecc581986dbc6f69ac36c2a8667bd6 Category: THT Zener diodes
Description: Diode: Zener; 5W; 25V; bulk; CASE017AA; single diode; 0.5uA; 1N53xxB
Type of diode: Zener
Power dissipation: 5W
Zener voltage: 25V
Kind of package: bulk
Case: CASE017AA
Mounting: THT
Tolerance: ±5%
Semiconductor structure: single diode
Leakage current: 0.5µA
Manufacturer series: 1N53xxB
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1N5360BRLG ONSEMI pVersion=0046&contRep=ZT&docId=005056AB281E1EDFB4B706AA2B43C0D8&compId=1N53xx.PDF?ci_sign=2dd0986a0cecc581986dbc6f69ac36c2a8667bd6 Category: THT Zener diodes
Description: Diode: Zener; 5W; 25V; reel,tape; CASE017AA; single diode; 0.5uA
Type of diode: Zener
Power dissipation: 5W
Zener voltage: 25V
Kind of package: reel; tape
Case: CASE017AA
Mounting: THT
Tolerance: ±5%
Semiconductor structure: single diode
Leakage current: 0.5µA
Manufacturer series: 1N53xxB
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NJL0281DG ONSEMI njl0281d-d.pdf Category: NPN THT transistors
Description: Transistor: NPN + diode; bipolar; 260V; 15A; 180W; TO264-5
Type of transistor: NPN + diode
Polarisation: bipolar
Power dissipation: 180W
Case: TO264-5
Mounting: THT
Kind of package: tube
Collector current: 15A
Collector-emitter voltage: 260V
Frequency: 30MHz
Current gain: 75...150
Pulsed collector current: 25A
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FFSP3065A FFSP3065A ONSEMI pVersion=0046&contRep=ZT&docId=005056AB281E1EDC95E9F0BD9FFB20CE&compId=FFSP3065A.pdf?ci_sign=ae6f21021727f98b886609f3ebf329b4107f5380 Category: THT Schottky diodes
Description: Diode: Schottky rectifying; SiC; THT; 650V; 30A; TO220-2; Ir: 600uA
Case: TO220-2
Mounting: THT
Kind of package: tube
Technology: SiC
Max. forward voltage: 2.4V
Type of diode: Schottky rectifying
Load current: 30A
Power dissipation: 40W
Max. load current: 75A
Max. forward impulse current: 150A
Semiconductor structure: single diode
Max. off-state voltage: 650V
Leakage current: 0.6mA
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FFSP3065B ONSEMI ffsp3065b-d.pdf Category: THT Schottky diodes
Description: Diode: Schottky rectifying; SiC; THT; 650V; 30A; TO220-2; tube
Case: TO220-2
Mounting: THT
Kind of package: tube
Technology: SiC
Max. forward voltage: 1.7V
Type of diode: Schottky rectifying
Load current: 30A
Semiconductor structure: single diode
Max. off-state voltage: 650V
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MGSF1N03LT1G MGSF1N03LT1G ONSEMI mgsf1n03lt1-d.pdf Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 30V; 2.1A; 690mW; SOT23
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 30V
Drain current: 2.1A
Power dissipation: 0.69W
Case: SOT23
Gate-source voltage: ±20V
On-state resistance: 80mΩ
Mounting: SMD
Kind of package: reel; tape
Kind of channel: enhancement
Gate charge: 6nC
на замовлення 2893 шт:
термін постачання 21-30 дні (днів)
28+15.79 грн
39+10.51 грн
50+8.71 грн
100+8.06 грн
250+7.41 грн
500+6.84 грн
1000+6.43 грн
Мінімальне замовлення: 28
В кошику  од. на суму  грн.
4N27M 4N27M ONSEMI pVersion=0046&contRep=ZT&docId=005056AB281E1EDE9A9C000B909D20D6&compId=4N28SM.pdf?ci_sign=ed637c7f915caf5e5a41a50bcb81f787e3204cdd pVersion=0046&contRep=ZT&docId=005056AB281E1EDE9A9C000B909A80D6&compId=4N27M.pdf?ci_sign=07a7839052f421564c7f9d69000e0018c75e712a Category: Optocouplers - analog output
Description: Optocoupler; THT; Ch: 1; OUT: transistor; Uinsul: 7.5kV; Uce: 30V
CTR@If: 10%@10mA
Collector-emitter voltage: 30V
Insulation voltage: 7.5kV
Case: DIP6
Type of optocoupler: optocoupler
Mounting: THT
Kind of output: transistor
Turn-on time: 2µs
Turn-off time: 2µs
Number of channels: 1
на замовлення 699 шт:
термін постачання 21-30 дні (днів)
10+43.85 грн
16+25.90 грн
50+19.06 грн
100+16.29 грн
Мінімальне замовлення: 10
В кошику  од. на суму  грн.
4N35M 4N35M ONSEMI 4N25M-ONS.pdf Category: Optocouplers - analog output
Description: Optocoupler; THT; Ch: 1; OUT: transistor; Uinsul: 7.5kV; Uce: 30V
Mounting: THT
Kind of output: transistor
Turn-off time: 2µs
Turn-on time: 2µs
Number of channels: 1
Collector-emitter voltage: 30V
CTR@If: 100%@10mA
Insulation voltage: 7.5kV
Case: DIP6
Type of optocoupler: optocoupler
на замовлення 27 шт:
термін постачання 21-30 дні (днів)
11+41.22 грн
15+28.26 грн
25+23.46 грн
Мінімальне замовлення: 11
В кошику  од. на суму  грн.
NXH040F120MNF1PG ONSEMI nxh040f120mnf1-d.pdf Category: Transistor modules MOSFET
Description: Module; transistor/transistor; 1.2kV; 30A; PIM22; Press-in PCB
Type of semiconductor module: MOSFET transistor
Semiconductor structure: transistor/transistor
Drain-source voltage: 1.2kV
Drain current: 30A
Case: PIM22
Topology: H-bridge
Electrical mounting: Press-in PCB
On-state resistance: 61mΩ
Pulsed drain current: 60A
Power dissipation: 113W
Technology: SiC
Gate-source voltage: -15...25V
Kind of package: in-tray
Mechanical mounting: screw
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NXH040F120MNF1PTG ONSEMI nxh040f120mnf1-d.pdf Category: Transistor modules MOSFET
Description: Module; transistor/transistor; 1.2kV; 30A; PIM22; Press-in PCB
Type of semiconductor module: MOSFET transistor
Semiconductor structure: transistor/transistor
Drain-source voltage: 1.2kV
Drain current: 30A
Case: PIM22
Topology: H-bridge
Electrical mounting: Press-in PCB
On-state resistance: 61mΩ
Pulsed drain current: 60A
Power dissipation: 113W
Technology: SiC
Gate-source voltage: -15...25V
Kind of package: in-tray
Mechanical mounting: screw
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NXH040P120MNF1PG ONSEMI nxh040p120mnf1-d.pdf Category: Transistor modules MOSFET
Description: Module; transistor/transistor; 1.2kV; 30A; PIM18; Press-in PCB
Type of semiconductor module: MOSFET transistor
Semiconductor structure: transistor/transistor
Drain-source voltage: 1.2kV
Drain current: 30A
Case: PIM18
Topology: MOSFET half-bridge
Electrical mounting: Press-in PCB
On-state resistance: 61mΩ
Pulsed drain current: 60A
Power dissipation: 113W
Technology: SiC
Gate-source voltage: -15...25V
Kind of package: in-tray
Mechanical mounting: screw
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1N5358BG 1N5358BG ONSEMI 1N53xx.PDF Category: THT Zener diodes
Description: Diode: Zener; 5W; 22V; bulk; CASE017AA; single diode; 0.5uA; 1N53xxB
Type of diode: Zener
Power dissipation: 5W
Zener voltage: 22V
Kind of package: bulk
Case: CASE017AA
Mounting: THT
Tolerance: ±5%
Semiconductor structure: single diode
Leakage current: 0.5µA
Manufacturer series: 1N53xxB
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1N5358BRLG ONSEMI 1N53xx.PDF description Category: THT Zener diodes
Description: Diode: Zener; 5W; 22V; reel,tape; CASE017AA; single diode; 0.5uA
Type of diode: Zener
Power dissipation: 5W
Zener voltage: 22V
Kind of package: reel; tape
Case: CASE017AA
Mounting: THT
Tolerance: ±5%
Semiconductor structure: single diode
Leakage current: 0.5µA
Manufacturer series: 1N53xxB
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74ACT00MTCX 74ACT00MTCX ONSEMI 74ACT00-D.PDF FAIRS25987-1.pdf?t.download=true&u=5oefqw Category: Gates, inverters
Description: IC: digital; NAND; Ch: 4; IN: 2; SMD; TSSOP14; 4.5÷5.5VDC; -40÷85°C
Type of integrated circuit: digital
Kind of gate: NAND
Number of channels: quad; 4
Number of inputs: 2
Mounting: SMD
Case: TSSOP14
Supply voltage: 4.5...5.5V DC
Operating temperature: -40...85°C
Kind of package: reel; tape
Family: ACT
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MC74ACT00DR2G ONSEMI pVersion=0046&contRep=ZT&docId=005056AB281E1EDDA4E629562E3400D3&compId=MC74AC00-D.pdf?ci_sign=51d2f67f322eb4c4311290c02a289336628276d2 Category: Gates, inverters
Description: IC: digital; NAND; Ch: 4; IN: 2; TTL; SMD; SOIC14; ACT; 4.5÷5.5VDC; ACT
Type of integrated circuit: digital
Kind of gate: NAND
Number of channels: 4
Number of inputs: 2
Technology: TTL
Mounting: SMD
Case: SOIC14
Supply voltage: 4.5...5.5V DC
Operating temperature: -55...125°C
Kind of package: reel; tape
Family: ACT
Manufacturer series: ACT
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MC74ACT00DTR2G MC74ACT00DTR2G ONSEMI mc74ac00-d.pdf Category: Gates, inverters
Description: IC: digital; NAND; Ch: 4; IN: 2; CMOS; SMD; TSSOP14; 4.5÷5.5VDC; 40uA
Type of integrated circuit: digital
Kind of gate: NAND
Number of channels: quad; 4
Number of inputs: 2
Technology: CMOS
Mounting: SMD
Case: TSSOP14
Supply voltage: 4.5...5.5V DC
Operating temperature: -55...125°C
Kind of package: reel; tape
Quiescent current: 40µA
Family: ACT
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CAT4004AHU2-GT3 ONSEMI cat4002a-d.pdf Category: LED drivers
Description: IC: driver; LED driver; 1-wire; uDFN8; 40mA; Ch: 4; 2.4÷5.5VDC; PWM
Type of integrated circuit: driver
Mounting: SMD
Kind of integrated circuit: LED driver
Integrated circuit features: PWM
Operating temperature: -40...85°C
Output current: 40mA
Supply voltage: 2.4...5.5V DC
Number of channels: 4
Interface: 1-wire
Case: uDFN8
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BZX84C20LT1G pVersion=0046&contRep=ZT&docId=005056AB281E1EDFB4CD843106A6E0D8&compId=BZX84B_BZX84C.PDF?ci_sign=43024a7d3781c2291565a68c90fd78feea6ddb17
BZX84C20LT1G
Виробник: ONSEMI
Category: SMD Zener diodes
Description: Diode: Zener; 0.3W; 20V; SMD; reel,tape; SOT23; single diode; 0.05uA
Type of diode: Zener
Power dissipation: 0.3W
Zener voltage: 20V
Mounting: SMD
Tolerance: ±5%
Kind of package: reel; tape
Case: SOT23
Semiconductor structure: single diode
Leakage current: 50nA
Manufacturer series: BZX84C
на замовлення 3909 шт:
термін постачання 21-30 дні (днів)
Кількість Ціна
63+7.02 грн
84+4.89 грн
105+3.91 грн
188+2.17 грн
239+1.71 грн
500+1.15 грн
1000+1.05 грн
1500+1.04 грн
Мінімальне замовлення: 63
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SZBZX84C20LT1G pVersion=0046&contRep=ZT&docId=005056AB281E1EDFB4CD843106A6E0D8&compId=BZX84B_BZX84C.PDF?ci_sign=43024a7d3781c2291565a68c90fd78feea6ddb17
Виробник: ONSEMI
Category: SMD Zener diodes
Description: Diode: Zener; 0.3W; 20V; SMD; reel,tape; SOT23; single diode; 0.05uA
Type of diode: Zener
Power dissipation: 0.3W
Zener voltage: 20V
Mounting: SMD
Tolerance: ±5%
Kind of package: reel; tape
Case: SOT23
Semiconductor structure: single diode
Leakage current: 50nA
Manufacturer series: BZX84C
Application: automotive industry
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SZBZX84C20ET1G pVersion=0046&contRep=ZT&docId=005056AB281E1EDFB4CDF40CF92A80D8&compId=BZX84CxxET1G.PDF?ci_sign=20d888150f9be2b3e7308e1b8fa08e23f61272cc
Виробник: ONSEMI
Category: SMD Zener diodes
Description: Diode: Zener; 0.3W; 20V; SMD; reel,tape; SOT23; single diode
Type of diode: Zener
Power dissipation: 0.3W
Zener voltage: 20V
Mounting: SMD
Tolerance: ±6%
Kind of package: reel; tape
Case: SOT23
Semiconductor structure: single diode
Manufacturer series: BZX84CxxET1G
Application: automotive industry
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SZBZX84C30ET1G BZX84CxxET1G.PDF
Виробник: ONSEMI
Category: SMD Zener diodes
Description: Diode: Zener; 0.3W; 30V; SMD; reel,tape; SOT23; single diode
Type of diode: Zener
Power dissipation: 0.3W
Zener voltage: 30V
Mounting: SMD
Tolerance: ±7%
Kind of package: reel; tape
Case: SOT23
Semiconductor structure: single diode
Manufacturer series: BZX84CxxET1G
Application: automotive industry
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SZBZX84C30LT1G BZX84B_BZX84C.PDF
Виробник: ONSEMI
Category: SMD Zener diodes
Description: Diode: Zener; 0.3W; 30V; SMD; reel,tape; SOT23; single diode; 0.05uA
Type of diode: Zener
Power dissipation: 0.3W
Zener voltage: 30V
Mounting: SMD
Tolerance: ±5%
Kind of package: reel; tape
Case: SOT23
Semiconductor structure: single diode
Leakage current: 50nA
Manufacturer series: BZX84C
Application: automotive industry
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D45VH10G D45VH10G.PDF
D45VH10G
Виробник: ONSEMI
Category: PNP THT transistors
Description: Transistor: PNP; bipolar; 80V; 15A; 83W; TO220AB
Type of transistor: PNP
Polarisation: bipolar
Collector-emitter voltage: 80V
Collector current: 15A
Power dissipation: 83W
Case: TO220AB
Current gain: 20
Mounting: THT
Kind of package: tube
Frequency: 50MHz
на замовлення 221 шт:
термін постачання 21-30 дні (днів)
Кількість Ціна
7+67.53 грн
14+31.11 грн
50+27.85 грн
Мінімальне замовлення: 7
В кошику  од. на суму  грн.
FDS4501h FAIRS34628-1.pdf?t.download=true&u=5oefqw fds4501h-d.pdf
FDS4501h
Виробник: ONSEMI
Category: Multi channel transistors
Description: Transistor: N/P-MOSFET; unipolar; 30/-20V; 9.3/-5.6A; 2.5W; SO8
Power dissipation: 2.5W
Drain current: 9.3/-5.6A
Gate-source voltage: ±20/±8V
Drain-source voltage: 30/-20V
Kind of package: reel; tape
On-state resistance: 80/29mΩ
Technology: PowerTrench®
Type of transistor: N/P-MOSFET
Polarisation: unipolar
Kind of channel: enhancement
Case: SO8
Gate charge: 21/27nC
Mounting: SMD
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MMUN2114LT1G pVersion=0046&contRep=ZT&docId=005056AB752F1EE7A0FBCEB303FB2749&compId=MMUN2114.PDF?ci_sign=1faa3e69c4f082a2adc844bd2107a4d5634eab01
MMUN2114LT1G
Виробник: ONSEMI
Category: PNP SMD transistors
Description: Transistor: PNP; bipolar; BRT; 50V; 0.1A; 0.246W; SOT23,TO236AB
Type of transistor: PNP
Polarisation: bipolar
Kind of transistor: BRT
Collector-emitter voltage: 50V
Collector current: 0.1A
Power dissipation: 0.246W
Case: SOT23; TO236AB
Mounting: SMD
Kind of package: reel; tape
Base resistor: 10kΩ
Base-emitter resistor: 47kΩ
Current gain: 80...140
на замовлення 2436 шт:
термін постачання 21-30 дні (днів)
Кількість Ціна
46+9.65 грн
77+5.29 грн
109+3.76 грн
125+3.26 грн
500+2.36 грн
1000+2.07 грн
1500+1.92 грн
Мінімальне замовлення: 46
В кошику  од. на суму  грн.
MMUN2114LT3G dta114y-d.pdf
MMUN2114LT3G
Виробник: ONSEMI
Category: PNP SMD transistors
Description: Transistor: PNP; bipolar; BRT; 50V; 0.1A; 0.246W; SOT23,TO236AB
Type of transistor: PNP
Polarisation: bipolar
Kind of transistor: BRT
Collector-emitter voltage: 50V
Collector current: 0.1A
Power dissipation: 0.246W
Case: SOT23; TO236AB
Mounting: SMD
Kind of package: reel; tape
Base resistor: 10kΩ
Base-emitter resistor: 47kΩ
Current gain: 80...140
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SMMUN2114LT1G dta114y-d.pdf
SMMUN2114LT1G
Виробник: ONSEMI
Category: PNP SMD transistors
Description: Transistor: PNP; bipolar; BRT; 50V; 0.1A; 0.246W; SOT23,TO236AB
Type of transistor: PNP
Polarisation: bipolar
Kind of transistor: BRT
Collector-emitter voltage: 50V
Collector current: 0.1A
Power dissipation: 0.246W
Case: SOT23; TO236AB
Mounting: SMD
Kind of package: reel; tape
Base resistor: 10kΩ
Application: automotive industry
Base-emitter resistor: 47kΩ
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MMBD2837LT1G pVersion=0046&contRep=ZT&docId=005056AB82531ED998CD38A84AE97820&compId=MMBD2837_8.pdf?ci_sign=50204fe3b7b73e3b0b616b2e8be0f02eced94911
MMBD2837LT1G
Виробник: ONSEMI
Category: SMD universal diodes
Description: Diode: switching; SMD; 75V; 0.15A; 4ns; SOT23; Ufmax: 1.2V; 225mW
Type of diode: switching
Mounting: SMD
Max. off-state voltage: 75V
Load current: 0.15A
Reverse recovery time: 4ns
Semiconductor structure: common cathode; double
Case: SOT23
Max. forward voltage: 1.2V
Kind of package: reel; tape
Capacitance: 4pF
Power dissipation: 0.225W
Max. load current: 0.45A
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NTHL185N60S5H nthl185n60s5h-d.pdf
Виробник: ONSEMI
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 600V; 15A; Idm: 53A; 116W; TO247-3
Mounting: THT
Case: TO247-3
Power dissipation: 116W
Kind of package: tube
Kind of channel: enhancement
Type of transistor: N-MOSFET
Gate charge: 25nC
On-state resistance: 0.185Ω
Drain current: 15A
Gate-source voltage: ±30V
Pulsed drain current: 53A
Drain-source voltage: 600V
Polarisation: unipolar
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NTMT185N60S5H ntmt185n60s5h-d.pdf
Виробник: ONSEMI
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 600V; 15A; Idm: 53A; 116W; TDFN4
Mounting: SMD
Case: TDFN4
Power dissipation: 116W
Kind of package: reel; tape
Kind of channel: enhancement
Type of transistor: N-MOSFET
Gate charge: 25nC
On-state resistance: 0.185Ω
Drain current: 15A
Gate-source voltage: ±30V
Pulsed drain current: 53A
Drain-source voltage: 600V
Polarisation: unipolar
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PZTA42T1G PZTA42T1G.PDF
PZTA42T1G
Виробник: ONSEMI
Category: NPN SMD transistors
Description: Transistor: NPN; bipolar; 300V; 0.5A; 1.5W; SOT223-4,TO261-4
Type of transistor: NPN
Polarisation: bipolar
Collector-emitter voltage: 300V
Collector current: 0.5A
Power dissipation: 1.5W
Case: SOT223-4; TO261-4
Current gain: 40
Mounting: SMD
Kind of package: reel; tape
Frequency: 50MHz
на замовлення 497 шт:
термін постачання 21-30 дні (днів)
Кількість Ціна
17+27.19 грн
24+17.10 грн
50+12.87 грн
100+11.40 грн
250+9.85 грн
Мінімальне замовлення: 17
В кошику  од. на суму  грн.
SPZTA42T1G pzta42t1-d.pdf
Виробник: ONSEMI
Category: NPN SMD transistors
Description: Transistor: NPN; bipolar; 300V; 0.5A; 1.5W; SOT223-4,TO261-4
Type of transistor: NPN
Polarisation: bipolar
Collector-emitter voltage: 300V
Collector current: 0.5A
Power dissipation: 1.5W
Case: SOT223-4; TO261-4
Current gain: 40
Mounting: SMD
Kind of package: tape
Frequency: 50MHz
Application: automotive industry
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FCD1300N80Z fcd1300n80z-d.pdf
Виробник: ONSEMI
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 800V; 4A; Idm: 12A; 52W; DPAK
Mounting: SMD
Kind of channel: enhancement
Type of transistor: N-MOSFET
Polarisation: unipolar
Gate charge: 16.2nC
On-state resistance: 1.3Ω
Drain current: 4A
Pulsed drain current: 12A
Gate-source voltage: ±20V
Power dissipation: 52W
Drain-source voltage: 800V
Kind of package: reel; tape
Case: DPAK
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NCV4299CD133R2G ncv4299c-d.pdf
Виробник: ONSEMI
Category: LDO fixed voltage regulators
Description: IC: voltage regulator; LDO,linear,fixed; 3.3V; 0.15A; SO8; SMD
Mounting: SMD
Kind of voltage regulator: fixed; LDO; linear
Type of integrated circuit: voltage regulator
Output voltage: 3.3V
Output current: 0.15A
Number of channels: 1
Application: automotive industry
Kind of package: reel; tape
Case: SO8
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BZX84C10LT1G BZX84B_BZX84C.PDF
BZX84C10LT1G
Виробник: ONSEMI
Category: SMD Zener diodes
Description: Diode: Zener; 0.3W; 10V; SMD; reel,tape; SOT23; single diode; 0.2uA
Type of diode: Zener
Power dissipation: 0.3W
Zener voltage: 10V
Mounting: SMD
Tolerance: ±5%
Kind of package: reel; tape
Case: SOT23
Semiconductor structure: single diode
Leakage current: 0.2µA
Manufacturer series: BZX84C
на замовлення 5446 шт:
термін постачання 21-30 дні (днів)
Кількість Ціна
72+6.14 грн
112+3.66 грн
166+2.46 грн
196+2.08 грн
250+1.69 грн
500+1.44 грн
1000+1.25 грн
3000+1.22 грн
Мінімальне замовлення: 72
В кошику  од. на суму  грн.
2SB1123S-TD-E en1727-d.pdf
2SB1123S-TD-E
Виробник: ONSEMI
Category: PNP SMD transistors
Description: Transistor: PNP; bipolar; 50V; 2A; 0.5W; SOT89
Type of transistor: PNP
Polarisation: bipolar
Collector-emitter voltage: 50V
Collector current: 2A
Power dissipation: 0.5W
Case: SOT89
Mounting: SMD
Kind of package: reel; tape
Frequency: 150MHz
Current gain: 140...280
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NCP1012ST100T3G ncp1010-d.pdf
NCP1012ST100T3G
Виробник: ONSEMI
Category: Voltage regulators - PWM circuits
Description: IC: PMIC; AC/DC switcher,PWM controller; 250mA; 100kHz; Ch: 1; 11Ω
Type of integrated circuit: PMIC
Kind of integrated circuit: AC/DC switcher; PWM controller
Output current: 0.25A
Frequency: 0.1MHz
Mounting: SMD
Case: SOT223
Topology: flyback
Number of channels: 1
Operating temperature: -40...125°C
On-state resistance: 11Ω
Operating voltage: 8.5...10V DC
Duty cycle factor: 0...72%
Kind of package: reel; tape
Application: SMPS
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NCP1072STAT3G ncp1070-d.pdf
Виробник: ONSEMI
Category: Voltage regulators - DC/DC circuits
Description: IC: PMIC; AC/DC switcher,PWM controller; SOT223; flyback
Type of integrated circuit: PMIC
Kind of integrated circuit: AC/DC switcher; PWM controller
Output current: 0.25A
Frequency: 59...71kHz
Mounting: SMD
Case: SOT223
Topology: flyback
Number of channels: 1
Operating temperature: -40...125°C
On-state resistance: 16Ω
Operating voltage: 6.3...10V DC
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NCP1072STBT3G ncp1070-d.pdf
Виробник: ONSEMI
Category: Voltage regulators - DC/DC circuits
Description: IC: PMIC; AC/DC switcher,PWM controller; SOT223; flyback
Type of integrated circuit: PMIC
Kind of integrated circuit: AC/DC switcher; PWM controller
Output current: 0.25A
Frequency: 90...110kHz
Mounting: SMD
Case: SOT223
Topology: flyback
Number of channels: 1
Operating temperature: -40...125°C
On-state resistance: 16Ω
Operating voltage: 6.3...10V DC
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NCV59745AMW180TAG ncv59745-d.pdf
Виробник: ONSEMI
Category: LDO fixed voltage regulators
Description: IC: voltage regulator; LDO,linear,fixed; 1.8V; 3A; SMD; reel,tape
Kind of package: reel; tape
Kind of voltage regulator: fixed; LDO; linear
Type of integrated circuit: voltage regulator
Number of channels: 1
Output voltage: 1.8V
Output current: 3A
Application: automotive industry
Mounting: SMD
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NLU2G17AMX1TCG nlu2g17-d.pdf
Виробник: ONSEMI
Category: Buffers, transceivers, drivers
Description: IC: digital; buffer,non-inverting; Ch: 2; CMOS; SMD; ULLGA6; 40uA
Type of integrated circuit: digital
Kind of integrated circuit: buffer; non-inverting
Number of channels: 2
Technology: CMOS
Mounting: SMD
Case: ULLGA6
Supply voltage: 1.65...5.5V DC
Kind of package: reel; tape
Kind of input: with Schmitt trigger
Operating temperature: -55...125°C
Quiescent current: 40µA
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NLX2G17AMX1TCG NLX2G17_Rev2_Oct2012.pdf
Виробник: ONSEMI
Category: Buffers, transceivers, drivers
Description: IC: digital; buffer,non-inverting; Ch: 2; CMOS; SMD; ULLGA6
Type of integrated circuit: digital
Kind of integrated circuit: buffer; non-inverting
Number of channels: 2
Technology: CMOS
Mounting: SMD
Case: ULLGA6
Supply voltage: 1.65...5.5V DC
Kind of package: reel; tape
Kind of input: with Schmitt trigger
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1N5369BG pVersion=0046&contRep=ZT&docId=005056AB281E1EDFB4B706AA2B43C0D8&compId=1N53xx.PDF?ci_sign=2dd0986a0cecc581986dbc6f69ac36c2a8667bd6
Виробник: ONSEMI
Category: THT Zener diodes
Description: Diode: Zener; 5W; 51V; bulk; CASE017AA; single diode; 0.5uA; 1N53xxB
Mounting: THT
Tolerance: ±5%
Semiconductor structure: single diode
Type of diode: Zener
Leakage current: 0.5µA
Case: CASE017AA
Kind of package: bulk
Power dissipation: 5W
Zener voltage: 51V
Manufacturer series: 1N53xxB
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2SB1201S-TL-E en2112-d.html
Виробник: ONSEMI
Category: PNP SMD transistors
Description: Transistor: PNP; bipolar; 50V; 2A; 0.8W; DPAK
Mounting: SMD
Case: DPAK
Kind of package: reel; tape
Type of transistor: PNP
Power dissipation: 0.8W
Collector current: 2A
Collector-emitter voltage: 50V
Current gain: 140...280
Frequency: 150MHz
Polarisation: bipolar
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FDPF320N06L fdpf320n06l-d.pdf
FDPF320N06L
Виробник: ONSEMI
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 60V; 15A; Idm: 84A; 26W; TO220FP
Type of transistor: N-MOSFET
Technology: PowerTrench®
Polarisation: unipolar
Drain-source voltage: 60V
Drain current: 15A
Pulsed drain current: 84A
Power dissipation: 26W
Case: TO220FP
Gate-source voltage: ±20V
On-state resistance: 25mΩ
Mounting: THT
Gate charge: 30.2nC
Kind of package: tube
Kind of channel: enhancement
Features of semiconductor devices: logic level
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NTTFS020N06CTAG NTTFS020N06C-D.PDF
Виробник: ONSEMI
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 60V; 27A; Idm: 128A; 15W; WDFN8
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 60V
Drain current: 27A
Pulsed drain current: 128A
Power dissipation: 15W
Case: WDFN8
Gate-source voltage: ±20V
On-state resistance: 20.3mΩ
Mounting: SMD
Gate charge: 5.8nC
Kind of package: reel; tape
Kind of channel: enhancement
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NVTFS020N06CTAG NVTFS020N06C-D.PDF
Виробник: ONSEMI
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 60V; 27A; Idm: 128A; 15W; WDFN8
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 60V
Drain current: 27A
Pulsed drain current: 128A
Power dissipation: 15W
Case: WDFN8
Gate-source voltage: ±20V
On-state resistance: 20.3mΩ
Mounting: SMD
Gate charge: 5.8nC
Kind of package: reel; tape
Kind of channel: enhancement
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NVTFWS020N06CTAG NVTFS020N06C-D.PDF
Виробник: ONSEMI
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 60V; 27A; Idm: 128A; 15W; WDFNW8
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 60V
Drain current: 27A
Pulsed drain current: 128A
Power dissipation: 15W
Case: WDFNW8
Gate-source voltage: ±20V
On-state resistance: 20.3mΩ
Mounting: SMD
Gate charge: 5.8nC
Kind of package: reel; tape
Kind of channel: enhancement
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MMSZ4702T1G pVersion=0046&contRep=ZT&docId=005056AB281E1EDFB4CFEB7388A7C0D8&compId=MMSZ4xxxT1G.PDF?ci_sign=a85907a4b31579eb401f684e4c002657dc7dfe7a
MMSZ4702T1G
Виробник: ONSEMI
Category: SMD Zener diodes
Description: Diode: Zener; 0.5W; 15V; SMD; reel,tape; SOD123; single diode
Mounting: SMD
Tolerance: ±5%
Kind of package: reel; tape
Semiconductor structure: single diode
Type of diode: Zener
Leakage current: 50nA
Power dissipation: 0.5W
Zener voltage: 15V
Case: SOD123
Manufacturer series: MMSZ4xxT1G
на замовлення 6556 шт:
термін постачання 21-30 дні (днів)
Кількість Ціна
63+7.02 грн
97+4.23 грн
120+3.42 грн
139+2.93 грн
165+2.48 грн
250+1.98 грн
500+1.66 грн
1000+1.38 грн
Мінімальне замовлення: 63
В кошику  од. на суму  грн.
1SMA5934BT3G pVersion=0046&contRep=ZT&docId=005056AB90B41EDC81949BABC3B320C7&compId=1SMA59xxBT3.PDF?ci_sign=ae78e9fa686988a769322b3766b51c193588ea67
1SMA5934BT3G
Виробник: ONSEMI
Category: SMD Zener diodes
Description: Diode: Zener; 1.5W; 24V; SMD; reel,tape; SMA; single diode
Type of diode: Zener
Power dissipation: 1.5W
Zener voltage: 24V
Mounting: SMD
Tolerance: ±5%
Kind of package: reel; tape
Case: SMA
Semiconductor structure: single diode
Manufacturer series: 1SMA59xxBT3G
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MMBZ5248BLT1G pVersion=0046&contRep=ZT&docId=005056AB281E1EDFB4CAA5C0BD20A0D8&compId=MMBZ52xxBLT1G.PDF?ci_sign=e66b6ae8d428f13192cf8029f8987439859092fc
MMBZ5248BLT1G
Виробник: ONSEMI
Category: SMD Zener diodes
Description: Diode: Zener; 0.3W; 18V; SMD; reel,tape; SOT23; single diode; 0.1uA
Type of diode: Zener
Power dissipation: 0.3W
Zener voltage: 18V
Mounting: SMD
Tolerance: ±5%
Kind of package: reel; tape
Case: SOT23
Semiconductor structure: single diode
Leakage current: 0.1µA
Manufacturer series: MMBZ52xxBLT1G
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SZMMBZ5248BLT1G pVersion=0046&contRep=ZT&docId=005056AB281E1EDFB4CAA5C0BD20A0D8&compId=MMBZ52xxBLT1G.PDF?ci_sign=e66b6ae8d428f13192cf8029f8987439859092fc
Виробник: ONSEMI
Category: SMD Zener diodes
Description: Diode: Zener; 0.3W; 18V; SMD; reel,tape; SOT23; single diode; 0.1uA
Type of diode: Zener
Power dissipation: 0.3W
Zener voltage: 18V
Mounting: SMD
Tolerance: ±5%
Kind of package: reel; tape
Case: SOT23
Semiconductor structure: single diode
Leakage current: 0.1µA
Manufacturer series: MMBZ52xxBLT1G
Application: automotive industry
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MOC3052M MOC3052M-ONS.PDF
MOC3052M
Виробник: ONSEMI
Category: Optotriacs
Description: Optotriac; 5.3kV; Uout: 600V; DIP6; MOC3052M
Type of optocoupler: optotriac
Insulation voltage: 5.3kV
Kind of output: without zero voltage crossing driver
Case: DIP6
Trigger current: 10mA
Mounting: THT
Output voltage: 600V
Manufacturer series: MOC3052M
на замовлення 73 шт:
термін постачання 21-30 дні (днів)
Кількість Ціна
7+66.66 грн
11+39.91 грн
50+33.96 грн
Мінімальне замовлення: 7
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BAV99LT3G pVersion=0046&contRep=ZT&docId=005056AB90B41ED9B3F68A2206D2C0C4&compId=BAV99LT3G.PDF?ci_sign=5d3fb25daa8884041a840340031ab2de05997614
BAV99LT3G
Виробник: ONSEMI
Category: SMD universal diodes
Description: Diode: switching; SMD; 100V; 0.215A; 6ns; SOT23; Ufmax: 1.75V; 225mW
Type of diode: switching
Mounting: SMD
Max. off-state voltage: 100V
Load current: 0.215A
Reverse recovery time: 6ns
Semiconductor structure: double series
Capacitance: 1.5pF
Case: SOT23
Max. forward voltage: 1.75V
Max. forward impulse current: 2A
Power dissipation: 0.225W
Kind of package: reel; tape
Max. load current: 0.45A
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SBAV99LT3G bav99lt1-d.pdf
SBAV99LT3G
Виробник: ONSEMI
Category: SMD universal diodes
Description: Diode: switching; SMD; 100V; 0.215A; 6ns; SOT23; Ufmax: 1.25V; 300mW
Type of diode: switching
Mounting: SMD
Max. off-state voltage: 100V
Load current: 0.215A
Reverse recovery time: 6ns
Semiconductor structure: double series
Capacitance: 1.5pF
Case: SOT23
Max. forward voltage: 1.25V
Max. forward impulse current: 2A
Leakage current: 50µA
Power dissipation: 0.3W
Kind of package: reel; tape
Application: automotive industry
на замовлення 10000 шт:
термін постачання 21-30 дні (днів)
Кількість Ціна
63+7.02 грн
193+2.12 грн
218+1.87 грн
274+1.49 грн
500+1.26 грн
1000+1.22 грн
Мінімальне замовлення: 63
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1N5231BTR 1N52xxB.PDF
Виробник: ONSEMI
Category: THT Zener diodes
Description: Diode: Zener; 0.5W; 5.1V; reel,tape; CASE017AG; single diode; 5uA
Type of diode: Zener
Power dissipation: 0.5W
Zener voltage: 5.1V
Kind of package: reel; tape
Case: CASE017AG
Mounting: THT
Tolerance: ±5%
Semiconductor structure: single diode
Leakage current: 5µA
Manufacturer series: 1N52xxB
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LM2575T-3.3G LM2575-ON-DTE.PDF
LM2575T-3.3G
Виробник: ONSEMI
Category: Voltage regulators - DC/DC circuits
Description: PMIC; DC/DC converter; Uin: 4.75÷40VDC; Uout: 3.3VDC; 1A; TO220-5
Input voltage: 4.75...40V DC
Output voltage: 3.3V DC
Output current: 1A
Case: TO220-5
Mounting: THT
Operating temperature: -40...125°C
Number of channels: 1
Type of integrated circuit: PMIC
Frequency: 42...63kHz
Topology: buck
Kind of package: tube
Kind of integrated circuit: DC/DC converter
на замовлення 41 шт:
термін постачання 21-30 дні (днів)
Кількість Ціна
3+192.08 грн
10+118.90 грн
Мінімальне замовлення: 3
В кошику  од. на суму  грн.
LM2575TV-ADJG lm2575-d.pdf
Виробник: ONSEMI
Category: Voltage regulators - DC/DC circuits
Description: PMIC; DC/DC converter; TO220-5; THT; tube
Type of integrated circuit: PMIC
Kind of integrated circuit: DC/DC converter
Case: TO220-5
Mounting: THT
Kind of package: tube
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MMBD1204 ONSM-S-A0003587619-1.pdf?t.download=true&u=5oefqw
MMBD1204
Виробник: ONSEMI
Category: SMD universal diodes
Description: Diode: switching; SMD; 100V; 0.2A; 4ns; SOT23; Ufmax: 1.1V; Ifsm: 2A
Type of diode: switching
Mounting: SMD
Max. off-state voltage: 100V
Load current: 0.2A
Reverse recovery time: 4ns
Semiconductor structure: common cathode; double
Case: SOT23
Max. forward voltage: 1.1V
Kind of package: reel; tape
Leakage current: 0.1mA
Capacitance: 2pF
Power dissipation: 0.35W
Max. forward impulse current: 2A
на замовлення 1180 шт:
термін постачання 21-30 дні (днів)
Кількість Ціна
32+14.03 грн
50+8.23 грн
73+5.62 грн
100+4.77 грн
250+3.88 грн
500+3.34 грн
1000+2.89 грн
Мінімальне замовлення: 32
В кошику  од. на суму  грн.
NVTFS003N04CTAG nvtfs003n04c-d.pdf
Виробник: ONSEMI
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 40V; 103A; Idm: 484A; 22W; WDFN8
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 40V
Drain current: 103A
Pulsed drain current: 484A
Power dissipation: 22W
Case: WDFN8
Gate-source voltage: ±20V
On-state resistance: 3.5mΩ
Mounting: SMD
Gate charge: 23nC
Kind of package: reel; tape
Kind of channel: enhancement
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1N5360BG pVersion=0046&contRep=ZT&docId=005056AB281E1EDFB4B706AA2B43C0D8&compId=1N53xx.PDF?ci_sign=2dd0986a0cecc581986dbc6f69ac36c2a8667bd6
Виробник: ONSEMI
Category: THT Zener diodes
Description: Diode: Zener; 5W; 25V; bulk; CASE017AA; single diode; 0.5uA; 1N53xxB
Type of diode: Zener
Power dissipation: 5W
Zener voltage: 25V
Kind of package: bulk
Case: CASE017AA
Mounting: THT
Tolerance: ±5%
Semiconductor structure: single diode
Leakage current: 0.5µA
Manufacturer series: 1N53xxB
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1N5360BRLG pVersion=0046&contRep=ZT&docId=005056AB281E1EDFB4B706AA2B43C0D8&compId=1N53xx.PDF?ci_sign=2dd0986a0cecc581986dbc6f69ac36c2a8667bd6
Виробник: ONSEMI
Category: THT Zener diodes
Description: Diode: Zener; 5W; 25V; reel,tape; CASE017AA; single diode; 0.5uA
Type of diode: Zener
Power dissipation: 5W
Zener voltage: 25V
Kind of package: reel; tape
Case: CASE017AA
Mounting: THT
Tolerance: ±5%
Semiconductor structure: single diode
Leakage current: 0.5µA
Manufacturer series: 1N53xxB
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NJL0281DG njl0281d-d.pdf
Виробник: ONSEMI
Category: NPN THT transistors
Description: Transistor: NPN + diode; bipolar; 260V; 15A; 180W; TO264-5
Type of transistor: NPN + diode
Polarisation: bipolar
Power dissipation: 180W
Case: TO264-5
Mounting: THT
Kind of package: tube
Collector current: 15A
Collector-emitter voltage: 260V
Frequency: 30MHz
Current gain: 75...150
Pulsed collector current: 25A
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FFSP3065A pVersion=0046&contRep=ZT&docId=005056AB281E1EDC95E9F0BD9FFB20CE&compId=FFSP3065A.pdf?ci_sign=ae6f21021727f98b886609f3ebf329b4107f5380
FFSP3065A
Виробник: ONSEMI
Category: THT Schottky diodes
Description: Diode: Schottky rectifying; SiC; THT; 650V; 30A; TO220-2; Ir: 600uA
Case: TO220-2
Mounting: THT
Kind of package: tube
Technology: SiC
Max. forward voltage: 2.4V
Type of diode: Schottky rectifying
Load current: 30A
Power dissipation: 40W
Max. load current: 75A
Max. forward impulse current: 150A
Semiconductor structure: single diode
Max. off-state voltage: 650V
Leakage current: 0.6mA
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FFSP3065B ffsp3065b-d.pdf
Виробник: ONSEMI
Category: THT Schottky diodes
Description: Diode: Schottky rectifying; SiC; THT; 650V; 30A; TO220-2; tube
Case: TO220-2
Mounting: THT
Kind of package: tube
Technology: SiC
Max. forward voltage: 1.7V
Type of diode: Schottky rectifying
Load current: 30A
Semiconductor structure: single diode
Max. off-state voltage: 650V
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MGSF1N03LT1G mgsf1n03lt1-d.pdf
MGSF1N03LT1G
Виробник: ONSEMI
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 30V; 2.1A; 690mW; SOT23
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 30V
Drain current: 2.1A
Power dissipation: 0.69W
Case: SOT23
Gate-source voltage: ±20V
On-state resistance: 80mΩ
Mounting: SMD
Kind of package: reel; tape
Kind of channel: enhancement
Gate charge: 6nC
на замовлення 2893 шт:
термін постачання 21-30 дні (днів)
Кількість Ціна
28+15.79 грн
39+10.51 грн
50+8.71 грн
100+8.06 грн
250+7.41 грн
500+6.84 грн
1000+6.43 грн
Мінімальне замовлення: 28
В кошику  од. на суму  грн.
4N27M pVersion=0046&contRep=ZT&docId=005056AB281E1EDE9A9C000B909D20D6&compId=4N28SM.pdf?ci_sign=ed637c7f915caf5e5a41a50bcb81f787e3204cdd pVersion=0046&contRep=ZT&docId=005056AB281E1EDE9A9C000B909A80D6&compId=4N27M.pdf?ci_sign=07a7839052f421564c7f9d69000e0018c75e712a
4N27M
Виробник: ONSEMI
Category: Optocouplers - analog output
Description: Optocoupler; THT; Ch: 1; OUT: transistor; Uinsul: 7.5kV; Uce: 30V
CTR@If: 10%@10mA
Collector-emitter voltage: 30V
Insulation voltage: 7.5kV
Case: DIP6
Type of optocoupler: optocoupler
Mounting: THT
Kind of output: transistor
Turn-on time: 2µs
Turn-off time: 2µs
Number of channels: 1
на замовлення 699 шт:
термін постачання 21-30 дні (днів)
Кількість Ціна
10+43.85 грн
16+25.90 грн
50+19.06 грн
100+16.29 грн
Мінімальне замовлення: 10
В кошику  од. на суму  грн.
4N35M 4N25M-ONS.pdf
4N35M
Виробник: ONSEMI
Category: Optocouplers - analog output
Description: Optocoupler; THT; Ch: 1; OUT: transistor; Uinsul: 7.5kV; Uce: 30V
Mounting: THT
Kind of output: transistor
Turn-off time: 2µs
Turn-on time: 2µs
Number of channels: 1
Collector-emitter voltage: 30V
CTR@If: 100%@10mA
Insulation voltage: 7.5kV
Case: DIP6
Type of optocoupler: optocoupler
на замовлення 27 шт:
термін постачання 21-30 дні (днів)
Кількість Ціна
11+41.22 грн
15+28.26 грн
25+23.46 грн
Мінімальне замовлення: 11
В кошику  од. на суму  грн.
NXH040F120MNF1PG nxh040f120mnf1-d.pdf
Виробник: ONSEMI
Category: Transistor modules MOSFET
Description: Module; transistor/transistor; 1.2kV; 30A; PIM22; Press-in PCB
Type of semiconductor module: MOSFET transistor
Semiconductor structure: transistor/transistor
Drain-source voltage: 1.2kV
Drain current: 30A
Case: PIM22
Topology: H-bridge
Electrical mounting: Press-in PCB
On-state resistance: 61mΩ
Pulsed drain current: 60A
Power dissipation: 113W
Technology: SiC
Gate-source voltage: -15...25V
Kind of package: in-tray
Mechanical mounting: screw
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NXH040F120MNF1PTG nxh040f120mnf1-d.pdf
Виробник: ONSEMI
Category: Transistor modules MOSFET
Description: Module; transistor/transistor; 1.2kV; 30A; PIM22; Press-in PCB
Type of semiconductor module: MOSFET transistor
Semiconductor structure: transistor/transistor
Drain-source voltage: 1.2kV
Drain current: 30A
Case: PIM22
Topology: H-bridge
Electrical mounting: Press-in PCB
On-state resistance: 61mΩ
Pulsed drain current: 60A
Power dissipation: 113W
Technology: SiC
Gate-source voltage: -15...25V
Kind of package: in-tray
Mechanical mounting: screw
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NXH040P120MNF1PG nxh040p120mnf1-d.pdf
Виробник: ONSEMI
Category: Transistor modules MOSFET
Description: Module; transistor/transistor; 1.2kV; 30A; PIM18; Press-in PCB
Type of semiconductor module: MOSFET transistor
Semiconductor structure: transistor/transistor
Drain-source voltage: 1.2kV
Drain current: 30A
Case: PIM18
Topology: MOSFET half-bridge
Electrical mounting: Press-in PCB
On-state resistance: 61mΩ
Pulsed drain current: 60A
Power dissipation: 113W
Technology: SiC
Gate-source voltage: -15...25V
Kind of package: in-tray
Mechanical mounting: screw
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1N5358BG 1N53xx.PDF
1N5358BG
Виробник: ONSEMI
Category: THT Zener diodes
Description: Diode: Zener; 5W; 22V; bulk; CASE017AA; single diode; 0.5uA; 1N53xxB
Type of diode: Zener
Power dissipation: 5W
Zener voltage: 22V
Kind of package: bulk
Case: CASE017AA
Mounting: THT
Tolerance: ±5%
Semiconductor structure: single diode
Leakage current: 0.5µA
Manufacturer series: 1N53xxB
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1N5358BRLG description 1N53xx.PDF
Виробник: ONSEMI
Category: THT Zener diodes
Description: Diode: Zener; 5W; 22V; reel,tape; CASE017AA; single diode; 0.5uA
Type of diode: Zener
Power dissipation: 5W
Zener voltage: 22V
Kind of package: reel; tape
Case: CASE017AA
Mounting: THT
Tolerance: ±5%
Semiconductor structure: single diode
Leakage current: 0.5µA
Manufacturer series: 1N53xxB
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74ACT00MTCX 74ACT00-D.PDF FAIRS25987-1.pdf?t.download=true&u=5oefqw
74ACT00MTCX
Виробник: ONSEMI
Category: Gates, inverters
Description: IC: digital; NAND; Ch: 4; IN: 2; SMD; TSSOP14; 4.5÷5.5VDC; -40÷85°C
Type of integrated circuit: digital
Kind of gate: NAND
Number of channels: quad; 4
Number of inputs: 2
Mounting: SMD
Case: TSSOP14
Supply voltage: 4.5...5.5V DC
Operating temperature: -40...85°C
Kind of package: reel; tape
Family: ACT
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MC74ACT00DR2G pVersion=0046&contRep=ZT&docId=005056AB281E1EDDA4E629562E3400D3&compId=MC74AC00-D.pdf?ci_sign=51d2f67f322eb4c4311290c02a289336628276d2
Виробник: ONSEMI
Category: Gates, inverters
Description: IC: digital; NAND; Ch: 4; IN: 2; TTL; SMD; SOIC14; ACT; 4.5÷5.5VDC; ACT
Type of integrated circuit: digital
Kind of gate: NAND
Number of channels: 4
Number of inputs: 2
Technology: TTL
Mounting: SMD
Case: SOIC14
Supply voltage: 4.5...5.5V DC
Operating temperature: -55...125°C
Kind of package: reel; tape
Family: ACT
Manufacturer series: ACT
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MC74ACT00DTR2G mc74ac00-d.pdf
MC74ACT00DTR2G
Виробник: ONSEMI
Category: Gates, inverters
Description: IC: digital; NAND; Ch: 4; IN: 2; CMOS; SMD; TSSOP14; 4.5÷5.5VDC; 40uA
Type of integrated circuit: digital
Kind of gate: NAND
Number of channels: quad; 4
Number of inputs: 2
Technology: CMOS
Mounting: SMD
Case: TSSOP14
Supply voltage: 4.5...5.5V DC
Operating temperature: -55...125°C
Kind of package: reel; tape
Quiescent current: 40µA
Family: ACT
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CAT4004AHU2-GT3 cat4002a-d.pdf
Виробник: ONSEMI
Category: LED drivers
Description: IC: driver; LED driver; 1-wire; uDFN8; 40mA; Ch: 4; 2.4÷5.5VDC; PWM
Type of integrated circuit: driver
Mounting: SMD
Kind of integrated circuit: LED driver
Integrated circuit features: PWM
Operating temperature: -40...85°C
Output current: 40mA
Supply voltage: 2.4...5.5V DC
Number of channels: 4
Interface: 1-wire
Case: uDFN8
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