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NCP302045MNTWG ONSEMI ncp302045-d.pdf Category: MOSFET/IGBT drivers
Description: IC: driver; MOSFET half-bridge; high-side,low-side,gate driver
Supply voltage: 4.5...5.5V DC
Operating temperature: -40...125°C
Type of integrated circuit: driver
Kind of integrated circuit: gate driver; high-side; low-side
Topology: MOSFET half-bridge
Case: PQFN31 5X5
Mounting: SMD
Pulse fall time: 6ns
Impulse rise time: 12ns
Output current: 45A
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FOD3150 FOD3150 ONSEMI FOD3150.pdf Category: Optocouplers - analog output
Description: Optocoupler; THT; Ch: 1; OUT: transistor; Uinsul: 5kV; DIP8; 50kV/μs
Case: DIP8
Mounting: THT
Type of optocoupler: optocoupler
Kind of output: transistor
Output voltage: 0...35V
Turn-on time: 60ns
Turn-off time: 60ns
Number of channels: 1
Max. off-state voltage: 5V
Insulation voltage: 5kV
Slew rate: 50kV/μs
на замовлення 319 шт:
термін постачання 14-30 дні (днів)
6+73.86 грн
25+70.50 грн
100+62.11 грн
Мінімальне замовлення: 6
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ESD7181MUT5G ONSEMI esd7181mu-d.pdf Category: Bidirectional TVS SMD diodes
Description: Diode: TVS; 20.5÷35V; bidirectional; X3DFN2; reel,tape
Case: X3DFN2
Mounting: SMD
Kind of package: reel; tape
Max. off-state voltage: 18.5V
Breakdown voltage: 20.5...35V
Semiconductor structure: bidirectional
Type of diode: TVS
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FDB070AN06A0 FDB070AN06A0 ONSEMI FDB070AN06A0.pdf Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 60V; 80A; 175W; D2PAK
Mounting: SMD
Case: D2PAK
Kind of channel: enhancement
Type of transistor: N-MOSFET
Technology: PowerTrench®
Kind of package: reel; tape
Polarisation: unipolar
Gate charge: 66nC
On-state resistance: 15mΩ
Gate-source voltage: ±20V
Drain current: 80A
Drain-source voltage: 60V
Power dissipation: 175W
на замовлення 790 шт:
термін постачання 14-30 дні (днів)
3+216.92 грн
5+173.73 грн
10+156.94 грн
25+151.07 грн
Мінімальне замовлення: 3
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NCV8460ADR2G NCV8460ADR2G ONSEMI ncv8460-d.pdf Category: Power switches - integrated circuits
Description: IC: power switch; high-side; 3A; Ch: 1; N-Channel; SMD; SO8
Supply voltage: 6...36V DC
Application: automotive industry
Kind of output: N-Channel
Kind of integrated circuit: high-side
Kind of package: reel; tape
Mounting: SMD
Type of integrated circuit: power switch
Case: SO8
On-state resistance: 0.4Ω
Number of channels: 1
Output current: 3A
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FDC637BNZ FDC637BNZ ONSEMI FDC637BNZ.pdf Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 20V; 6.2A; 1.6W; SuperSOT-6
Type of transistor: N-MOSFET
Technology: PowerTrench®
Polarisation: unipolar
Drain-source voltage: 20V
Drain current: 6.2A
Power dissipation: 1.6W
Case: SuperSOT-6
Gate-source voltage: ±20V
On-state resistance: 41mΩ
Mounting: SMD
Gate charge: 12nC
Kind of package: reel; tape
Kind of channel: enhancement
на замовлення 1490 шт:
термін постачання 14-30 дні (днів)
13+35.25 грн
17+26.02 грн
19+22.16 грн
100+12.92 грн
500+10.32 грн
1000+9.57 грн
Мінімальне замовлення: 13
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NCP1607BDR2G NCP1607BDR2G ONSEMI ncp1607-d.pdf Category: Drivers - integrated circuits
Description: IC: PMIC; 500÷800mA; 9.5÷20VDC; SO8; Topology: boost
Type of integrated circuit: PMIC
Output current: 500...800mA
Mounting: SMD
Operating voltage: 9.5...20V DC
Number of channels: 1
Operating temperature: -40...125°C
Case: SO8
Topology: boost
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FAN9673Q ONSEMI fan9673-d.pdf Category: Integrated circuits - others
Description: IC: PMIC; PFC controller; LQFP32; 15V
Type of integrated circuit: PMIC
Mounting: SMD
Supply voltage: 15V
Case: LQFP32
Kind of integrated circuit: PFC controller
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NC7SZ11P6X NC7SZ11P6X ONSEMI NC7SZ11P6X.pdf Category: Gates, inverters
Description: IC: digital; AND; Ch: 1; IN: 3; SMD; SC88A; 1.65÷5.5VDC; -40÷85°C
Type of integrated circuit: digital
Kind of gate: AND
Number of channels: single; 1
Number of inputs: 3
Mounting: SMD
Case: SC88A
Supply voltage: 1.65...5.5V DC
Operating temperature: -40...85°C
Kind of package: reel; tape
на замовлення 6265 шт:
термін постачання 14-30 дні (днів)
21+21.69 грн
34+12.42 грн
39+10.91 грн
44+9.57 грн
100+8.06 грн
250+7.22 грн
500+6.71 грн
1000+6.21 грн
3000+5.87 грн
Мінімальне замовлення: 21
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FDP032N08 ONSEMI fdp032n08-d.pdf Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 75V; 235A; Idm: 940A; 375W; TO220-3
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 75V
Drain current: 235A
Pulsed drain current: 940A
Power dissipation: 375W
Case: TO220-3
Gate-source voltage: ±20V
On-state resistance: 3.2mΩ
Mounting: THT
Gate charge: 169nC
Kind of package: tube
Kind of channel: enhancement
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FDP032N08B-F102 ONSEMI fdp032n08b-d.pdf Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 80V; 211A; Idm: 844A; 263W; TO220-3
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 80V
Drain current: 211A
Pulsed drain current: 844A
Power dissipation: 263W
Case: TO220-3
Gate-source voltage: ±20V
On-state resistance: 3.3mΩ
Mounting: THT
Gate charge: 111nC
Kind of package: tube
Kind of channel: enhancement
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NCV8752BMX18TCG ONSEMI ncv8752-d.pdf Category: LDO fixed voltage regulators
Description: IC: voltage regulator; LDO,linear,fixed; 1.8V; 0.2A; XDFN6; SMD
Application: automotive industry
Kind of package: reel; tape
Type of integrated circuit: voltage regulator
Kind of voltage regulator: fixed; LDO; linear
Mounting: SMD
Case: XDFN6
Output current: 0.2A
Output voltage: 1.8V
Number of channels: 1
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NCV8752AMX18TCG ONSEMI ncv8752-d.pdf Category: LDO fixed voltage regulators
Description: IC: voltage regulator; LDO,linear,fixed; 1.8V; 0.2A; XDFN6; SMD
Application: automotive industry
Kind of package: reel; tape
Type of integrated circuit: voltage regulator
Kind of voltage regulator: fixed; LDO; linear
Mounting: SMD
Case: XDFN6
Output current: 0.2A
Output voltage: 1.8V
Number of channels: 1
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NCV8752AMX28TCG ONSEMI ncv8752-d.pdf Category: LDO fixed voltage regulators
Description: IC: voltage regulator; LDO,linear,fixed; 2.8V; 0.2A; XDFN6; SMD
Application: automotive industry
Kind of package: reel; tape
Type of integrated circuit: voltage regulator
Kind of voltage regulator: fixed; LDO; linear
Mounting: SMD
Case: XDFN6
Output current: 0.2A
Output voltage: 2.8V
Number of channels: 1
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NCV8752ASN30T1G ONSEMI ncv8752-d.pdf Category: LDO fixed voltage regulators
Description: IC: voltage regulator; LDO,linear,fixed; 3V; 0.2A; TSOP5; SMD; Ch: 1
Application: automotive industry
Kind of package: reel; tape
Type of integrated circuit: voltage regulator
Kind of voltage regulator: fixed; LDO; linear
Mounting: SMD
Case: TSOP5
Output current: 0.2A
Output voltage: 3V
Number of channels: 1
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NCV8752BMX28TCG ONSEMI ncv8752-d.pdf Category: LDO fixed voltage regulators
Description: IC: voltage regulator; LDO,linear,fixed; 2.8V; 0.2A; XDFN6; SMD
Application: automotive industry
Kind of package: reel; tape
Type of integrated circuit: voltage regulator
Kind of voltage regulator: fixed; LDO; linear
Mounting: SMD
Case: XDFN6
Output current: 0.2A
Output voltage: 2.8V
Number of channels: 1
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NCV8752BMX33TCG ONSEMI ncv8752-d.pdf Category: LDO fixed voltage regulators
Description: IC: voltage regulator; LDO,linear,fixed; 3.3V; 0.2A; XDFN6; SMD
Application: automotive industry
Kind of package: reel; tape
Type of integrated circuit: voltage regulator
Kind of voltage regulator: fixed; LDO; linear
Mounting: SMD
Case: XDFN6
Output current: 0.2A
Output voltage: 3.3V
Number of channels: 1
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NCV8752BSN28T1G ONSEMI ncv8752-d.pdf Category: LDO fixed voltage regulators
Description: IC: voltage regulator; LDO,linear,fixed; 2.8V; 0.2A; TSOP5; SMD
Application: automotive industry
Kind of package: reel; tape
Type of integrated circuit: voltage regulator
Kind of voltage regulator: fixed; LDO; linear
Mounting: SMD
Case: TSOP5
Output current: 0.2A
Output voltage: 2.8V
Number of channels: 1
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NCV8752BSN30T1G ONSEMI NCV8752-D.PDF Category: LDO fixed voltage regulators
Description: IC: voltage regulator; LDO,linear,fixed; 3V; 0.2A; TSOP5; SMD; Ch: 1
Application: automotive industry
Kind of package: reel; tape
Type of integrated circuit: voltage regulator
Kind of voltage regulator: fixed; LDO; linear
Mounting: SMD
Case: TSOP5
Output current: 0.2A
Output voltage: 3V
Number of channels: 1
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SMMUN2114LT1G SMMUN2114LT1G ONSEMI dta114y-d.pdf Category: PNP SMD transistors
Description: Transistor: PNP; bipolar; BRT; 50V; 0.1A; 0.246W; SOT23,TO236AB
Type of transistor: PNP
Polarisation: bipolar
Kind of transistor: BRT
Collector-emitter voltage: 50V
Collector current: 0.1A
Power dissipation: 0.246W
Case: SOT23; TO236AB
Mounting: SMD
Kind of package: reel; tape
Base resistor: 10kΩ
Application: automotive industry
Base-emitter resistor: 47kΩ
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MBRD650CTT4G MBRD650CTT4G ONSEMI MBRD650CTG.PDF Category: SMD Schottky diodes
Description: Diode: Schottky rectifying; DPAK; SMD; 60V; 3Ax2; reel,tape
Type of diode: Schottky rectifying
Case: DPAK
Mounting: SMD
Max. off-state voltage: 60V
Load current: 3A x2
Semiconductor structure: common cathode; double
Max. forward voltage: 0.85V
Max. load current: 6A
Kind of package: reel; tape
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2SB1215S-TL-E ONSEMI en2539-d.pdf Category: PNP SMD transistors
Description: Transistor: PNP; bipolar; 100V; 3A; 1W; DPAK
Polarisation: bipolar
Type of transistor: PNP
Power dissipation: 1W
Case: DPAK
Collector current: 3A
Collector-emitter voltage: 100V
Current gain: 140...280
Mounting: SMD
Kind of package: reel; tape
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FODM121A FODM121A ONSEMI FODM121A.pdf Category: Optocouplers - analog output
Description: Optocoupler; SMD; Ch: 1; OUT: transistor; Uinsul: 3.75kV; Uce: 80V
Mounting: SMD
Manufacturer series: FODM121
Case: Mini-flat 4pin
Type of optocoupler: optocoupler
Kind of output: transistor
Turn-off time: 3µs
Turn-on time: 3µs
Number of channels: 1
Collector-emitter voltage: 80V
CTR@If: 100-300%@5mA
Insulation voltage: 3.75kV
на замовлення 1857 шт:
термін постачання 14-30 дні (днів)
16+29.83 грн
21+20.65 грн
100+18.55 грн
Мінімальне замовлення: 16
В кошику  од. на суму  грн.
FCB125N65S3 ONSEMI fcb125n65s3-d.pdf Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 650V; 24A; Idm: 60A; 181W; D2PAK
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 650V
Drain current: 24A
Pulsed drain current: 60A
Power dissipation: 181W
Case: D2PAK
Gate-source voltage: ±30V
On-state resistance: 0.125Ω
Mounting: SMD
Gate charge: 46nC
Kind of package: reel; tape
Kind of channel: enhancement
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FCH125N65S3R0-F155 ONSEMI fch125n65s3r0-d.pdf Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 650V; 15A; Idm: 60A; 181W; TO247
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 650V
Drain current: 15A
Pulsed drain current: 60A
Power dissipation: 181W
Case: TO247
Gate-source voltage: ±30V
On-state resistance: 0.105Ω
Mounting: THT
Gate charge: 46nC
Kind of package: tube
Kind of channel: enhancement
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FCP125N65S3 ONSEMI fcp125n65s3-d.pdf Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 650V; 24A; Idm: 60A; 181W; TO220-3
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 650V
Drain current: 24A
Pulsed drain current: 60A
Power dissipation: 181W
Case: TO220-3
Gate-source voltage: ±30V
On-state resistance: 0.125Ω
Mounting: THT
Gate charge: 46nC
Kind of package: tube
Kind of channel: enhancement
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FCP125N65S3R0 ONSEMI fcp125n65s3r0-d.pdf Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 650V; 24A; Idm: 60A; 181W; TO220-3
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 650V
Drain current: 24A
Pulsed drain current: 60A
Power dissipation: 181W
Case: TO220-3
Gate-source voltage: ±30V
On-state resistance: 0.125Ω
Mounting: THT
Gate charge: 46nC
Kind of package: tube
Kind of channel: enhancement
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NTP125N65S3H ONSEMI ntp125n65s3h-d.pdf Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 650V; 24A; Idm: 67A; 171W; TO220-3
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 650V
Drain current: 24A
Pulsed drain current: 67A
Power dissipation: 171W
Case: TO220-3
Gate-source voltage: ±30V
On-state resistance: 0.125Ω
Mounting: THT
Gate charge: 44nC
Kind of package: tube
Kind of channel: enhancement
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NVB125N65S3 ONSEMI nvb125n65s3-d.pdf Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 650V; 24A; Idm: 60A; 181W; D2PAK
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 650V
Drain current: 24A
Pulsed drain current: 60A
Power dissipation: 181W
Case: D2PAK
Gate-source voltage: ±30V
On-state resistance: 0.125Ω
Mounting: SMD
Gate charge: 46nC
Kind of package: reel; tape
Kind of channel: enhancement
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FCPF125N65S3 ONSEMI fcpf125n65s3-d.pdf Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 650V; 24A; Idm: 60A; 38W; TO220FP
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 650V
Drain current: 24A
Pulsed drain current: 60A
Power dissipation: 38W
Case: TO220FP
Gate-source voltage: ±30V
On-state resistance: 0.125Ω
Mounting: THT
Gate charge: 44nC
Kind of package: tube
Kind of channel: enhancement
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FCMT125N65S3 ONSEMI fcmt125n65s3-d.pdf Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 650V; 24A; Idm: 60A; 181W; PQFN4
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 650V
Drain current: 24A
Pulsed drain current: 60A
Power dissipation: 181W
Case: PQFN4
Gate-source voltage: ±30V
On-state resistance: 0.125Ω
Mounting: SMD
Gate charge: 49nC
Kind of package: reel; tape
Kind of channel: enhancement
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NTHL125N65S3H ONSEMI nthl125n65s3h-d.pdf Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 650V; 24A; Idm: 67A; 171W; TO247-3
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 650V
Drain current: 24A
Pulsed drain current: 67A
Power dissipation: 171W
Case: TO247-3
Gate-source voltage: ±30V
On-state resistance: 0.125Ω
Mounting: THT
Gate charge: 44nC
Kind of package: tube
Kind of channel: enhancement
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NTPF125N65S3H ONSEMI ntpf125n65s3h-d.pdf Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 650V; 24A; Idm: 67A; 37W; TO220FP
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 650V
Drain current: 24A
Pulsed drain current: 67A
Power dissipation: 37W
Case: TO220FP
Gate-source voltage: ±30V
On-state resistance: 0.125Ω
Mounting: THT
Gate charge: 44nC
Kind of package: tube
Kind of channel: enhancement
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NVHL025N65S3 ONSEMI nvhl025n65s3-d.pdf Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 650V; 75A; Idm: 300A; 595W; TO247-3
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 650V
Drain current: 75A
Pulsed drain current: 300A
Power dissipation: 595W
Case: TO247-3
Gate-source voltage: ±30V
On-state resistance: 25mΩ
Mounting: THT
Gate charge: 236nC
Kind of package: tube
Kind of channel: enhancement
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FDB28N30TM FDB28N30TM ONSEMI FDB28N30TM.pdf Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 300V; 28A; 250W; D2PAK
Type of transistor: N-MOSFET
Technology: UniFET™
Polarisation: unipolar
Drain-source voltage: 300V
Drain current: 28A
Power dissipation: 250W
Case: D2PAK
Gate-source voltage: ±30V
On-state resistance: 0.129Ω
Mounting: SMD
Kind of package: reel; tape
Kind of channel: enhancement
Gate charge: 50nC
на замовлення 698 шт:
термін постачання 14-30 дні (днів)
3+186.19 грн
4+134.28 грн
10+105.75 грн
20+96.52 грн
100+87.28 грн
Мінімальне замовлення: 3
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FDA38N30 FDA38N30 ONSEMI fda38n30-d.pdf Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 300V; 22A; Idm: 150A; 312W; TO3PN
Type of transistor: N-MOSFET
Technology: DMOS; UniFET™
Polarisation: unipolar
Drain-source voltage: 300V
Drain current: 22A
Power dissipation: 312W
Case: TO3PN
Gate-source voltage: ±30V
On-state resistance: 85mΩ
Mounting: THT
Kind of package: tube
Kind of channel: enhancement
Gate charge: 60nC
Pulsed drain current: 150A
на замовлення 384 шт:
термін постачання 14-30 дні (днів)
2+300.07 грн
5+198.91 грн
10+184.64 грн
Мінімальне замовлення: 2
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HUF75545P3 HUF75545P3 ONSEMI HUF75545P3.pdf Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 80V; 73A; 270W; TO220AB
Type of transistor: N-MOSFET
Technology: UltraFET®
Polarisation: unipolar
Drain-source voltage: 80V
Drain current: 73A
Power dissipation: 270W
Case: TO220AB
Gate-source voltage: ±20V
On-state resistance: 10mΩ
Mounting: THT
Gate charge: 235nC
Kind of channel: enhancement
Kind of package: tube
на замовлення 95 шт:
термін постачання 14-30 дні (днів)
3+164.50 грн
10+126.73 грн
20+125.89 грн
Мінімальне замовлення: 3
В кошику  од. на суму  грн.
HUF75545S3ST ONSEMI HUF75545S3S-D.PDF Category: SMD N channel transistors
Description: Transistor: N-MOSFET; N; 80V; 75A; 270W; D2PAK,TO263
Type of transistor: N-MOSFET
Technology: PowerTrench®
Polarisation: N
Drain-source voltage: 80V
Drain current: 75A
Power dissipation: 270W
Case: D2PAK; TO263
Gate-source voltage: 20V
On-state resistance: 8.2mΩ
Mounting: SMD
Gate charge: 235nC
Kind of channel: enhancement
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FDS6699S FDS6699S ONSEMI FDS6699S.pdf Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 30V; 21A; 2.5W; SO8
Type of transistor: N-MOSFET
Technology: PowerTrench®
Polarisation: unipolar
Drain-source voltage: 30V
Drain current: 21A
Power dissipation: 2.5W
Case: SO8
Gate-source voltage: ±20V
On-state resistance: 3.1Ω
Mounting: SMD
Gate charge: 91nC
Kind of package: reel; tape
Kind of channel: enhancement
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MMSD701T1G MMSD701T1G ONSEMI mmsd301t1-d.pdf Category: SMD Schottky diodes
Description: Diode: Schottky switching; SOD123; SMD; 70V; 0.2A; reel,tape; 225mW
Type of diode: Schottky switching
Case: SOD123
Mounting: SMD
Max. off-state voltage: 70V
Load current: 0.2A
Semiconductor structure: single diode
Max. forward voltage: 1V
Kind of package: reel; tape
Capacitance: 1pF
Power dissipation: 0.225W
на замовлення 308 шт:
термін постачання 14-30 дні (днів)
36+12.65 грн
50+8.48 грн
61+6.90 грн
100+6.24 грн
Мінімальне замовлення: 36
В кошику  од. на суму  грн.
SMMSD701T1G SMMSD701T1G ONSEMI mmsd301t1-d.pdf Category: SMD Schottky diodes
Description: Diode: Schottky switching; SOD123; SMD; 70V; 0.2A; reel,tape
Type of diode: Schottky switching
Case: SOD123
Mounting: SMD
Max. off-state voltage: 70V
Load current: 0.2A
Semiconductor structure: single diode
Max. forward voltage: 0.5V
Kind of package: reel; tape
на замовлення 2890 шт:
термін постачання 14-30 дні (днів)
18+25.31 грн
22+19.47 грн
26+16.53 грн
100+12.34 грн
Мінімальне замовлення: 18
В кошику  од. на суму  грн.
LM337T LM337T ONSEMI LM337T-FAI.pdf Category: Adjustable voltage regulators
Description: IC: voltage regulator; linear,adjustable; -37÷-1.2V; 1.5A; THT
Type of integrated circuit: voltage regulator
Kind of voltage regulator: adjustable; linear
Output voltage: -37...-1.2V
Output current: 1.5A
Case: TO220-3
Mounting: THT
Operating temperature: 0...125°C
Number of channels: 1
Input voltage: 3...40V
Kind of package: tube
Heatsink thickness: 0.51...0.61mm
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DF04M DF04M ONSEMI DF005-10m.pdf Category: SMD/THT sing. phase diode bridge rectif.
Description: Bridge rectifier: single-phase; Urmax: 400V; If: 1.5A; Ifsm: 50A
Type of bridge rectifier: single-phase
Max. off-state voltage: 0.4kV
Load current: 1.5A
Max. forward impulse current: 50A
Case: MDIP4L
Kind of package: tube
Max. forward voltage: 1.1V
Features of semiconductor devices: glass passivated
Electrical mounting: THT
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BC847BPDW1T3G ONSEMI bc846bpdw1t1-d.pdf Category: Complementary transistors
Description: Transistor: NPN / PNP; bipolar; 45V; 100mA; 380mW
Type of transistor: NPN / PNP
Polarisation: bipolar
Collector-emitter voltage: 45V
Collector current: 0.1A
Power dissipation: 0.38W
Case: SC70-6; SC88A; SOT363
Mounting: SMD
Frequency: 100MHz
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BC847BPDXV6T1G ONSEMI bc847bpdxv6t1-d.pdf Category: Complementary transistors
Description: Transistor: NPN / PNP; bipolar; complementary pair; 45V; 0.1A
Type of transistor: NPN / PNP
Polarisation: bipolar
Kind of transistor: complementary pair
Collector-emitter voltage: 45V
Collector current: 0.1A
Power dissipation: 0.5W
Case: SOT563
Current gain: 200...475
Mounting: SMD
Kind of package: reel; tape
Frequency: 100MHz
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SBC847BPDW1T3G SBC847BPDW1T3G ONSEMI bc846bpdw1t1-d.pdf Category: Complementary transistors
Description: Transistor: NPN / PNP; bipolar; complementary pair; 45V; 0.1A
Type of transistor: NPN / PNP
Polarisation: bipolar
Kind of transistor: complementary pair
Collector-emitter voltage: 45V
Collector current: 0.1A
Power dissipation: 0.38W
Case: SC70-6; SC88; SOT363
Current gain: 200...475
Mounting: SMD
Kind of package: reel; tape
Frequency: 100MHz
Application: automotive industry
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SBC847BPDXV6T1G ONSEMI bc847bpdxv6t1-d.pdf Category: Complementary transistors
Description: Transistor: NPN / PNP; bipolar; complementary pair; 45V; 0.1A
Type of transistor: NPN / PNP
Polarisation: bipolar
Kind of transistor: complementary pair
Collector-emitter voltage: 45V
Collector current: 0.1A
Power dissipation: 0.5W
Case: SOT563
Current gain: 200...475
Mounting: SMD
Kind of package: reel; tape
Frequency: 100MHz
Application: automotive industry
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NTGS3433T1G ONSEMI ntgs3433t1-d.pdf Category: SMD P channel transistors
Description: Transistor: P-MOSFET; unipolar; -12V; -2.35A; Idm: -14A; 1W; TSOP6
Type of transistor: P-MOSFET
Polarisation: unipolar
Drain-source voltage: -12V
Drain current: -2.35A
Pulsed drain current: -14A
Power dissipation: 1W
Case: TSOP6
Gate-source voltage: ±8V
On-state resistance: 75mΩ
Mounting: SMD
Gate charge: 7nC
Kind of package: reel; tape
Kind of channel: enhancement
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MC14023BDR2G MC14023BDR2G ONSEMI MC14001B-D.pdf Category: Gates, inverters
Description: IC: digital; NAND; Ch: 3; IN: 3; CMOS; SMD; SO14; 3÷18VDC; -55÷125°C
Type of integrated circuit: digital
Kind of gate: NAND
Number of channels: triple; 3
Number of inputs: 3
Technology: CMOS
Mounting: SMD
Case: SO14
Supply voltage: 3...18V DC
Operating temperature: -55...125°C
Kind of package: reel; tape
Delay time: 130ns
Family: HEF4000B
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MBRS2040LT3G MBRS2040LT3G ONSEMI MBRS2040LT3G.PDF Category: SMD Schottky diodes
Description: Diode: Schottky rectifying; SMB; SMD; 40V; 2A; reel,tape
Type of diode: Schottky rectifying
Case: SMB
Mounting: SMD
Max. off-state voltage: 40V
Load current: 2A
Semiconductor structure: single diode
Max. forward voltage: 0.45V
Max. load current: 4A
Kind of package: reel; tape
на замовлення 5347 шт:
термін постачання 14-30 дні (днів)
16+28.92 грн
21+20.14 грн
25+17.79 грн
50+16.03 грн
100+14.44 грн
250+12.34 грн
500+10.83 грн
1000+9.32 грн
2500+9.23 грн
Мінімальне замовлення: 16
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SS14 SS14 ONSEMI SSxx.pdf Category: SMD Schottky diodes
Description: Diode: Schottky rectifying; SMA; SMD; 40V; 1A; reel,tape; 1.1W
Type of diode: Schottky rectifying
Case: SMA
Mounting: SMD
Max. off-state voltage: 40V
Load current: 1A
Semiconductor structure: single diode
Max. forward voltage: 0.5V
Max. forward impulse current: 40A
Kind of package: reel; tape
Power dissipation: 1.1W
на замовлення 7797 шт:
термін постачання 14-30 дні (днів)
25+18.08 грн
30+14.27 грн
34+12.59 грн
50+9.15 грн
100+7.97 грн
250+6.80 грн
500+6.04 грн
1000+5.46 грн
7500+5.04 грн
Мінімальне замовлення: 25
В кошику  од. на суму  грн.
NCV8184DR2G ONSEMI ncv8184-d.pdf Category: LDO adjustable voltage regulators
Description: IC: voltage regulator; LDO,linear,adjustable; -3÷45V; 0.07A; SO8
Type of integrated circuit: voltage regulator
Kind of voltage regulator: adjustable; LDO; linear
Output voltage: -3...45V
Output current: 70mA
Case: SO8
Mounting: SMD
Kind of package: reel; tape
Number of channels: 1
Application: automotive industry
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NCV8184DTRKG ONSEMI ncv8184-d.pdf Category: LDO adjustable voltage regulators
Description: IC: voltage regulator; LDO,linear,adjustable; -3÷45V; 0.07A; SMD
Type of integrated circuit: voltage regulator
Kind of voltage regulator: adjustable; LDO; linear
Output voltage: -3...45V
Output current: 70mA
Case: DPAK4
Mounting: SMD
Kind of package: reel; tape
Number of channels: 1
Application: automotive industry
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NCV8184PDR2G ONSEMI ncv8184-d.pdf Category: LDO adjustable voltage regulators
Description: IC: voltage regulator; LDO,linear,adjustable; -3÷45V; 0.07A; SO8
Type of integrated circuit: voltage regulator
Kind of voltage regulator: adjustable; LDO; linear
Output voltage: -3...45V
Output current: 70mA
Case: SO8
Mounting: SMD
Kind of package: reel; tape
Number of channels: 1
Application: automotive industry
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MC74LVXT4051DR2G MC74LVXT4051DR2G ONSEMI mc74lvxt4051-d.pdf Category: Analog multiplexers and switches
Description: IC: digital; demultiplexer,multiplexer; Ch: 1; SO16; 2.5÷6VDC; 80uA
Mounting: SMD
Operating temperature: -55...125°C
Case: SO16
Type of integrated circuit: digital
Technology: CMOS; TTL
Kind of package: reel; tape
Kind of integrated circuit: demultiplexer; multiplexer
Supply voltage: 2.5...6V DC
Quiescent current: 80µA
Number of channels: 1
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MC74LVXT4051DTR2G ONSEMI MC74LVXT4051-D.pdf Category: Decoders, multiplexers, switches
Description: IC: digital; 8bit,analog,demultiplexer,multiplexer; Ch: 1; IN: 8
Manufacturer series: LVXT
Mounting: SMD
Operating temperature: -55...125°C
Case: TSSOP16
Type of integrated circuit: digital
Technology: CMOS; TTL
Family: LVXT
Kind of package: reel; tape
Kind of integrated circuit: 8bit; analog; demultiplexer; multiplexer
Supply voltage: -6...0V DC; 2.5...6V DC
Number of channels: 1
Number of inputs: 8
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MC74LVXT4051DTRG ONSEMI MC74LVXT4051-D.pdf Category: Decoders, multiplexers, switches
Description: IC: digital; 8bit,analog,demultiplexer,multiplexer; Ch: 1; IN: 8
Manufacturer series: LVXT
Mounting: SMD
Operating temperature: -55...125°C
Case: TSSOP16
Type of integrated circuit: digital
Technology: CMOS; TTL
Family: LVXT
Kind of package: reel; tape
Kind of integrated circuit: 8bit; analog; demultiplexer; multiplexer
Supply voltage: -6...0V DC; 2.5...6V DC
Number of channels: 1
Number of inputs: 8
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MC74LVXT4052DTG MC74LVXT4052DTG ONSEMI MC74LVXT4052-D.pdf Category: Decoders, multiplexers, switches
Description: IC: digital; 4bit,analog,demultiplexer,multiplexer; Ch: 2; IN: 8
Manufacturer series: LVXT
Mounting: SMD
Operating temperature: -55...125°C
Case: TSSOP16
Type of integrated circuit: digital
Technology: CMOS; TTL
Family: LVXT
Kind of package: reel; tape
Kind of integrated circuit: 4bit; analog; demultiplexer; multiplexer
Supply voltage: -6...0V DC; 2.5...6V DC
Number of channels: 2
Number of inputs: 8
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MC74LVXT4052DTRG ONSEMI MC74LVXT4052-D.pdf Category: Decoders, multiplexers, switches
Description: IC: digital; 4bit,analog,demultiplexer,multiplexer; Ch: 2; IN: 8
Manufacturer series: LVXT
Mounting: SMD
Operating temperature: -55...125°C
Case: TSSOP16
Type of integrated circuit: digital
Technology: CMOS; TTL
Family: LVXT
Kind of package: reel; tape
Kind of integrated circuit: 4bit; analog; demultiplexer; multiplexer
Supply voltage: -6...0V DC; 2.5...6V DC
Number of channels: 2
Number of inputs: 8
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MC74LVXT4053DR2G MC74LVXT4053DR2G ONSEMI MC74LVXT4053-D.pdf Category: Decoders, multiplexers, switches
Description: IC: digital; 2bit,analog,demultiplexer,multiplexer; Ch: 3; IN: 6
Manufacturer series: LVXT
Mounting: SMD
Operating temperature: -55...125°C
Case: SOIC16
Type of integrated circuit: digital
Technology: CMOS; TTL
Family: LVXT
Kind of package: reel; tape
Kind of integrated circuit: 2bit; analog; demultiplexer; multiplexer
Supply voltage: -6...0V DC; 2.5...6V DC
Number of channels: 3
Number of inputs: 6
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NCP302045MNTWG ncp302045-d.pdf
Виробник: ONSEMI
Category: MOSFET/IGBT drivers
Description: IC: driver; MOSFET half-bridge; high-side,low-side,gate driver
Supply voltage: 4.5...5.5V DC
Operating temperature: -40...125°C
Type of integrated circuit: driver
Kind of integrated circuit: gate driver; high-side; low-side
Topology: MOSFET half-bridge
Case: PQFN31 5X5
Mounting: SMD
Pulse fall time: 6ns
Impulse rise time: 12ns
Output current: 45A
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FOD3150 FOD3150.pdf
FOD3150
Виробник: ONSEMI
Category: Optocouplers - analog output
Description: Optocoupler; THT; Ch: 1; OUT: transistor; Uinsul: 5kV; DIP8; 50kV/μs
Case: DIP8
Mounting: THT
Type of optocoupler: optocoupler
Kind of output: transistor
Output voltage: 0...35V
Turn-on time: 60ns
Turn-off time: 60ns
Number of channels: 1
Max. off-state voltage: 5V
Insulation voltage: 5kV
Slew rate: 50kV/μs
на замовлення 319 шт:
термін постачання 14-30 дні (днів)
Кількість Ціна
6+73.86 грн
25+70.50 грн
100+62.11 грн
Мінімальне замовлення: 6
В кошику  од. на суму  грн.
ESD7181MUT5G esd7181mu-d.pdf
Виробник: ONSEMI
Category: Bidirectional TVS SMD diodes
Description: Diode: TVS; 20.5÷35V; bidirectional; X3DFN2; reel,tape
Case: X3DFN2
Mounting: SMD
Kind of package: reel; tape
Max. off-state voltage: 18.5V
Breakdown voltage: 20.5...35V
Semiconductor structure: bidirectional
Type of diode: TVS
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FDB070AN06A0 FDB070AN06A0.pdf
FDB070AN06A0
Виробник: ONSEMI
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 60V; 80A; 175W; D2PAK
Mounting: SMD
Case: D2PAK
Kind of channel: enhancement
Type of transistor: N-MOSFET
Technology: PowerTrench®
Kind of package: reel; tape
Polarisation: unipolar
Gate charge: 66nC
On-state resistance: 15mΩ
Gate-source voltage: ±20V
Drain current: 80A
Drain-source voltage: 60V
Power dissipation: 175W
на замовлення 790 шт:
термін постачання 14-30 дні (днів)
Кількість Ціна
3+216.92 грн
5+173.73 грн
10+156.94 грн
25+151.07 грн
Мінімальне замовлення: 3
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NCV8460ADR2G ncv8460-d.pdf
NCV8460ADR2G
Виробник: ONSEMI
Category: Power switches - integrated circuits
Description: IC: power switch; high-side; 3A; Ch: 1; N-Channel; SMD; SO8
Supply voltage: 6...36V DC
Application: automotive industry
Kind of output: N-Channel
Kind of integrated circuit: high-side
Kind of package: reel; tape
Mounting: SMD
Type of integrated circuit: power switch
Case: SO8
On-state resistance: 0.4Ω
Number of channels: 1
Output current: 3A
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FDC637BNZ FDC637BNZ.pdf
FDC637BNZ
Виробник: ONSEMI
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 20V; 6.2A; 1.6W; SuperSOT-6
Type of transistor: N-MOSFET
Technology: PowerTrench®
Polarisation: unipolar
Drain-source voltage: 20V
Drain current: 6.2A
Power dissipation: 1.6W
Case: SuperSOT-6
Gate-source voltage: ±20V
On-state resistance: 41mΩ
Mounting: SMD
Gate charge: 12nC
Kind of package: reel; tape
Kind of channel: enhancement
на замовлення 1490 шт:
термін постачання 14-30 дні (днів)
Кількість Ціна
13+35.25 грн
17+26.02 грн
19+22.16 грн
100+12.92 грн
500+10.32 грн
1000+9.57 грн
Мінімальне замовлення: 13
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NCP1607BDR2G ncp1607-d.pdf
NCP1607BDR2G
Виробник: ONSEMI
Category: Drivers - integrated circuits
Description: IC: PMIC; 500÷800mA; 9.5÷20VDC; SO8; Topology: boost
Type of integrated circuit: PMIC
Output current: 500...800mA
Mounting: SMD
Operating voltage: 9.5...20V DC
Number of channels: 1
Operating temperature: -40...125°C
Case: SO8
Topology: boost
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FAN9673Q fan9673-d.pdf
Виробник: ONSEMI
Category: Integrated circuits - others
Description: IC: PMIC; PFC controller; LQFP32; 15V
Type of integrated circuit: PMIC
Mounting: SMD
Supply voltage: 15V
Case: LQFP32
Kind of integrated circuit: PFC controller
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NC7SZ11P6X NC7SZ11P6X.pdf
NC7SZ11P6X
Виробник: ONSEMI
Category: Gates, inverters
Description: IC: digital; AND; Ch: 1; IN: 3; SMD; SC88A; 1.65÷5.5VDC; -40÷85°C
Type of integrated circuit: digital
Kind of gate: AND
Number of channels: single; 1
Number of inputs: 3
Mounting: SMD
Case: SC88A
Supply voltage: 1.65...5.5V DC
Operating temperature: -40...85°C
Kind of package: reel; tape
на замовлення 6265 шт:
термін постачання 14-30 дні (днів)
Кількість Ціна
21+21.69 грн
34+12.42 грн
39+10.91 грн
44+9.57 грн
100+8.06 грн
250+7.22 грн
500+6.71 грн
1000+6.21 грн
3000+5.87 грн
Мінімальне замовлення: 21
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FDP032N08 fdp032n08-d.pdf
Виробник: ONSEMI
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 75V; 235A; Idm: 940A; 375W; TO220-3
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 75V
Drain current: 235A
Pulsed drain current: 940A
Power dissipation: 375W
Case: TO220-3
Gate-source voltage: ±20V
On-state resistance: 3.2mΩ
Mounting: THT
Gate charge: 169nC
Kind of package: tube
Kind of channel: enhancement
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FDP032N08B-F102 fdp032n08b-d.pdf
Виробник: ONSEMI
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 80V; 211A; Idm: 844A; 263W; TO220-3
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 80V
Drain current: 211A
Pulsed drain current: 844A
Power dissipation: 263W
Case: TO220-3
Gate-source voltage: ±20V
On-state resistance: 3.3mΩ
Mounting: THT
Gate charge: 111nC
Kind of package: tube
Kind of channel: enhancement
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NCV8752BMX18TCG ncv8752-d.pdf
Виробник: ONSEMI
Category: LDO fixed voltage regulators
Description: IC: voltage regulator; LDO,linear,fixed; 1.8V; 0.2A; XDFN6; SMD
Application: automotive industry
Kind of package: reel; tape
Type of integrated circuit: voltage regulator
Kind of voltage regulator: fixed; LDO; linear
Mounting: SMD
Case: XDFN6
Output current: 0.2A
Output voltage: 1.8V
Number of channels: 1
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NCV8752AMX18TCG ncv8752-d.pdf
Виробник: ONSEMI
Category: LDO fixed voltage regulators
Description: IC: voltage regulator; LDO,linear,fixed; 1.8V; 0.2A; XDFN6; SMD
Application: automotive industry
Kind of package: reel; tape
Type of integrated circuit: voltage regulator
Kind of voltage regulator: fixed; LDO; linear
Mounting: SMD
Case: XDFN6
Output current: 0.2A
Output voltage: 1.8V
Number of channels: 1
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NCV8752AMX28TCG ncv8752-d.pdf
Виробник: ONSEMI
Category: LDO fixed voltage regulators
Description: IC: voltage regulator; LDO,linear,fixed; 2.8V; 0.2A; XDFN6; SMD
Application: automotive industry
Kind of package: reel; tape
Type of integrated circuit: voltage regulator
Kind of voltage regulator: fixed; LDO; linear
Mounting: SMD
Case: XDFN6
Output current: 0.2A
Output voltage: 2.8V
Number of channels: 1
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NCV8752ASN30T1G ncv8752-d.pdf
Виробник: ONSEMI
Category: LDO fixed voltage regulators
Description: IC: voltage regulator; LDO,linear,fixed; 3V; 0.2A; TSOP5; SMD; Ch: 1
Application: automotive industry
Kind of package: reel; tape
Type of integrated circuit: voltage regulator
Kind of voltage regulator: fixed; LDO; linear
Mounting: SMD
Case: TSOP5
Output current: 0.2A
Output voltage: 3V
Number of channels: 1
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NCV8752BMX28TCG ncv8752-d.pdf
Виробник: ONSEMI
Category: LDO fixed voltage regulators
Description: IC: voltage regulator; LDO,linear,fixed; 2.8V; 0.2A; XDFN6; SMD
Application: automotive industry
Kind of package: reel; tape
Type of integrated circuit: voltage regulator
Kind of voltage regulator: fixed; LDO; linear
Mounting: SMD
Case: XDFN6
Output current: 0.2A
Output voltage: 2.8V
Number of channels: 1
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NCV8752BMX33TCG ncv8752-d.pdf
Виробник: ONSEMI
Category: LDO fixed voltage regulators
Description: IC: voltage regulator; LDO,linear,fixed; 3.3V; 0.2A; XDFN6; SMD
Application: automotive industry
Kind of package: reel; tape
Type of integrated circuit: voltage regulator
Kind of voltage regulator: fixed; LDO; linear
Mounting: SMD
Case: XDFN6
Output current: 0.2A
Output voltage: 3.3V
Number of channels: 1
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NCV8752BSN28T1G ncv8752-d.pdf
Виробник: ONSEMI
Category: LDO fixed voltage regulators
Description: IC: voltage regulator; LDO,linear,fixed; 2.8V; 0.2A; TSOP5; SMD
Application: automotive industry
Kind of package: reel; tape
Type of integrated circuit: voltage regulator
Kind of voltage regulator: fixed; LDO; linear
Mounting: SMD
Case: TSOP5
Output current: 0.2A
Output voltage: 2.8V
Number of channels: 1
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NCV8752BSN30T1G NCV8752-D.PDF
Виробник: ONSEMI
Category: LDO fixed voltage regulators
Description: IC: voltage regulator; LDO,linear,fixed; 3V; 0.2A; TSOP5; SMD; Ch: 1
Application: automotive industry
Kind of package: reel; tape
Type of integrated circuit: voltage regulator
Kind of voltage regulator: fixed; LDO; linear
Mounting: SMD
Case: TSOP5
Output current: 0.2A
Output voltage: 3V
Number of channels: 1
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SMMUN2114LT1G dta114y-d.pdf
SMMUN2114LT1G
Виробник: ONSEMI
Category: PNP SMD transistors
Description: Transistor: PNP; bipolar; BRT; 50V; 0.1A; 0.246W; SOT23,TO236AB
Type of transistor: PNP
Polarisation: bipolar
Kind of transistor: BRT
Collector-emitter voltage: 50V
Collector current: 0.1A
Power dissipation: 0.246W
Case: SOT23; TO236AB
Mounting: SMD
Kind of package: reel; tape
Base resistor: 10kΩ
Application: automotive industry
Base-emitter resistor: 47kΩ
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MBRD650CTT4G MBRD650CTG.PDF
MBRD650CTT4G
Виробник: ONSEMI
Category: SMD Schottky diodes
Description: Diode: Schottky rectifying; DPAK; SMD; 60V; 3Ax2; reel,tape
Type of diode: Schottky rectifying
Case: DPAK
Mounting: SMD
Max. off-state voltage: 60V
Load current: 3A x2
Semiconductor structure: common cathode; double
Max. forward voltage: 0.85V
Max. load current: 6A
Kind of package: reel; tape
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2SB1215S-TL-E en2539-d.pdf
Виробник: ONSEMI
Category: PNP SMD transistors
Description: Transistor: PNP; bipolar; 100V; 3A; 1W; DPAK
Polarisation: bipolar
Type of transistor: PNP
Power dissipation: 1W
Case: DPAK
Collector current: 3A
Collector-emitter voltage: 100V
Current gain: 140...280
Mounting: SMD
Kind of package: reel; tape
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FODM121A FODM121A.pdf
FODM121A
Виробник: ONSEMI
Category: Optocouplers - analog output
Description: Optocoupler; SMD; Ch: 1; OUT: transistor; Uinsul: 3.75kV; Uce: 80V
Mounting: SMD
Manufacturer series: FODM121
Case: Mini-flat 4pin
Type of optocoupler: optocoupler
Kind of output: transistor
Turn-off time: 3µs
Turn-on time: 3µs
Number of channels: 1
Collector-emitter voltage: 80V
CTR@If: 100-300%@5mA
Insulation voltage: 3.75kV
на замовлення 1857 шт:
термін постачання 14-30 дні (днів)
Кількість Ціна
16+29.83 грн
21+20.65 грн
100+18.55 грн
Мінімальне замовлення: 16
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FCB125N65S3 fcb125n65s3-d.pdf
Виробник: ONSEMI
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 650V; 24A; Idm: 60A; 181W; D2PAK
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 650V
Drain current: 24A
Pulsed drain current: 60A
Power dissipation: 181W
Case: D2PAK
Gate-source voltage: ±30V
On-state resistance: 0.125Ω
Mounting: SMD
Gate charge: 46nC
Kind of package: reel; tape
Kind of channel: enhancement
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FCH125N65S3R0-F155 fch125n65s3r0-d.pdf
Виробник: ONSEMI
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 650V; 15A; Idm: 60A; 181W; TO247
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 650V
Drain current: 15A
Pulsed drain current: 60A
Power dissipation: 181W
Case: TO247
Gate-source voltage: ±30V
On-state resistance: 0.105Ω
Mounting: THT
Gate charge: 46nC
Kind of package: tube
Kind of channel: enhancement
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FCP125N65S3 fcp125n65s3-d.pdf
Виробник: ONSEMI
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 650V; 24A; Idm: 60A; 181W; TO220-3
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 650V
Drain current: 24A
Pulsed drain current: 60A
Power dissipation: 181W
Case: TO220-3
Gate-source voltage: ±30V
On-state resistance: 0.125Ω
Mounting: THT
Gate charge: 46nC
Kind of package: tube
Kind of channel: enhancement
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FCP125N65S3R0 fcp125n65s3r0-d.pdf
Виробник: ONSEMI
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 650V; 24A; Idm: 60A; 181W; TO220-3
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 650V
Drain current: 24A
Pulsed drain current: 60A
Power dissipation: 181W
Case: TO220-3
Gate-source voltage: ±30V
On-state resistance: 0.125Ω
Mounting: THT
Gate charge: 46nC
Kind of package: tube
Kind of channel: enhancement
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NTP125N65S3H ntp125n65s3h-d.pdf
Виробник: ONSEMI
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 650V; 24A; Idm: 67A; 171W; TO220-3
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 650V
Drain current: 24A
Pulsed drain current: 67A
Power dissipation: 171W
Case: TO220-3
Gate-source voltage: ±30V
On-state resistance: 0.125Ω
Mounting: THT
Gate charge: 44nC
Kind of package: tube
Kind of channel: enhancement
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NVB125N65S3 nvb125n65s3-d.pdf
Виробник: ONSEMI
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 650V; 24A; Idm: 60A; 181W; D2PAK
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 650V
Drain current: 24A
Pulsed drain current: 60A
Power dissipation: 181W
Case: D2PAK
Gate-source voltage: ±30V
On-state resistance: 0.125Ω
Mounting: SMD
Gate charge: 46nC
Kind of package: reel; tape
Kind of channel: enhancement
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FCPF125N65S3 fcpf125n65s3-d.pdf
Виробник: ONSEMI
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 650V; 24A; Idm: 60A; 38W; TO220FP
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 650V
Drain current: 24A
Pulsed drain current: 60A
Power dissipation: 38W
Case: TO220FP
Gate-source voltage: ±30V
On-state resistance: 0.125Ω
Mounting: THT
Gate charge: 44nC
Kind of package: tube
Kind of channel: enhancement
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FCMT125N65S3 fcmt125n65s3-d.pdf
Виробник: ONSEMI
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 650V; 24A; Idm: 60A; 181W; PQFN4
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 650V
Drain current: 24A
Pulsed drain current: 60A
Power dissipation: 181W
Case: PQFN4
Gate-source voltage: ±30V
On-state resistance: 0.125Ω
Mounting: SMD
Gate charge: 49nC
Kind of package: reel; tape
Kind of channel: enhancement
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NTHL125N65S3H nthl125n65s3h-d.pdf
Виробник: ONSEMI
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 650V; 24A; Idm: 67A; 171W; TO247-3
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 650V
Drain current: 24A
Pulsed drain current: 67A
Power dissipation: 171W
Case: TO247-3
Gate-source voltage: ±30V
On-state resistance: 0.125Ω
Mounting: THT
Gate charge: 44nC
Kind of package: tube
Kind of channel: enhancement
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NTPF125N65S3H ntpf125n65s3h-d.pdf
Виробник: ONSEMI
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 650V; 24A; Idm: 67A; 37W; TO220FP
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 650V
Drain current: 24A
Pulsed drain current: 67A
Power dissipation: 37W
Case: TO220FP
Gate-source voltage: ±30V
On-state resistance: 0.125Ω
Mounting: THT
Gate charge: 44nC
Kind of package: tube
Kind of channel: enhancement
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NVHL025N65S3 nvhl025n65s3-d.pdf
Виробник: ONSEMI
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 650V; 75A; Idm: 300A; 595W; TO247-3
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 650V
Drain current: 75A
Pulsed drain current: 300A
Power dissipation: 595W
Case: TO247-3
Gate-source voltage: ±30V
On-state resistance: 25mΩ
Mounting: THT
Gate charge: 236nC
Kind of package: tube
Kind of channel: enhancement
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FDB28N30TM FDB28N30TM.pdf
FDB28N30TM
Виробник: ONSEMI
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 300V; 28A; 250W; D2PAK
Type of transistor: N-MOSFET
Technology: UniFET™
Polarisation: unipolar
Drain-source voltage: 300V
Drain current: 28A
Power dissipation: 250W
Case: D2PAK
Gate-source voltage: ±30V
On-state resistance: 0.129Ω
Mounting: SMD
Kind of package: reel; tape
Kind of channel: enhancement
Gate charge: 50nC
на замовлення 698 шт:
термін постачання 14-30 дні (днів)
Кількість Ціна
3+186.19 грн
4+134.28 грн
10+105.75 грн
20+96.52 грн
100+87.28 грн
Мінімальне замовлення: 3
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FDA38N30 fda38n30-d.pdf
FDA38N30
Виробник: ONSEMI
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 300V; 22A; Idm: 150A; 312W; TO3PN
Type of transistor: N-MOSFET
Technology: DMOS; UniFET™
Polarisation: unipolar
Drain-source voltage: 300V
Drain current: 22A
Power dissipation: 312W
Case: TO3PN
Gate-source voltage: ±30V
On-state resistance: 85mΩ
Mounting: THT
Kind of package: tube
Kind of channel: enhancement
Gate charge: 60nC
Pulsed drain current: 150A
на замовлення 384 шт:
термін постачання 14-30 дні (днів)
Кількість Ціна
2+300.07 грн
5+198.91 грн
10+184.64 грн
Мінімальне замовлення: 2
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HUF75545P3 HUF75545P3.pdf
HUF75545P3
Виробник: ONSEMI
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 80V; 73A; 270W; TO220AB
Type of transistor: N-MOSFET
Technology: UltraFET®
Polarisation: unipolar
Drain-source voltage: 80V
Drain current: 73A
Power dissipation: 270W
Case: TO220AB
Gate-source voltage: ±20V
On-state resistance: 10mΩ
Mounting: THT
Gate charge: 235nC
Kind of channel: enhancement
Kind of package: tube
на замовлення 95 шт:
термін постачання 14-30 дні (днів)
Кількість Ціна
3+164.50 грн
10+126.73 грн
20+125.89 грн
Мінімальне замовлення: 3
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HUF75545S3ST HUF75545S3S-D.PDF
Виробник: ONSEMI
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; N; 80V; 75A; 270W; D2PAK,TO263
Type of transistor: N-MOSFET
Technology: PowerTrench®
Polarisation: N
Drain-source voltage: 80V
Drain current: 75A
Power dissipation: 270W
Case: D2PAK; TO263
Gate-source voltage: 20V
On-state resistance: 8.2mΩ
Mounting: SMD
Gate charge: 235nC
Kind of channel: enhancement
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FDS6699S FDS6699S.pdf
FDS6699S
Виробник: ONSEMI
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 30V; 21A; 2.5W; SO8
Type of transistor: N-MOSFET
Technology: PowerTrench®
Polarisation: unipolar
Drain-source voltage: 30V
Drain current: 21A
Power dissipation: 2.5W
Case: SO8
Gate-source voltage: ±20V
On-state resistance: 3.1Ω
Mounting: SMD
Gate charge: 91nC
Kind of package: reel; tape
Kind of channel: enhancement
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MMSD701T1G mmsd301t1-d.pdf
MMSD701T1G
Виробник: ONSEMI
Category: SMD Schottky diodes
Description: Diode: Schottky switching; SOD123; SMD; 70V; 0.2A; reel,tape; 225mW
Type of diode: Schottky switching
Case: SOD123
Mounting: SMD
Max. off-state voltage: 70V
Load current: 0.2A
Semiconductor structure: single diode
Max. forward voltage: 1V
Kind of package: reel; tape
Capacitance: 1pF
Power dissipation: 0.225W
на замовлення 308 шт:
термін постачання 14-30 дні (днів)
Кількість Ціна
36+12.65 грн
50+8.48 грн
61+6.90 грн
100+6.24 грн
Мінімальне замовлення: 36
В кошику  од. на суму  грн.
SMMSD701T1G mmsd301t1-d.pdf
SMMSD701T1G
Виробник: ONSEMI
Category: SMD Schottky diodes
Description: Diode: Schottky switching; SOD123; SMD; 70V; 0.2A; reel,tape
Type of diode: Schottky switching
Case: SOD123
Mounting: SMD
Max. off-state voltage: 70V
Load current: 0.2A
Semiconductor structure: single diode
Max. forward voltage: 0.5V
Kind of package: reel; tape
на замовлення 2890 шт:
термін постачання 14-30 дні (днів)
Кількість Ціна
18+25.31 грн
22+19.47 грн
26+16.53 грн
100+12.34 грн
Мінімальне замовлення: 18
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LM337T LM337T-FAI.pdf
LM337T
Виробник: ONSEMI
Category: Adjustable voltage regulators
Description: IC: voltage regulator; linear,adjustable; -37÷-1.2V; 1.5A; THT
Type of integrated circuit: voltage regulator
Kind of voltage regulator: adjustable; linear
Output voltage: -37...-1.2V
Output current: 1.5A
Case: TO220-3
Mounting: THT
Operating temperature: 0...125°C
Number of channels: 1
Input voltage: 3...40V
Kind of package: tube
Heatsink thickness: 0.51...0.61mm
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DF04M DF005-10m.pdf
DF04M
Виробник: ONSEMI
Category: SMD/THT sing. phase diode bridge rectif.
Description: Bridge rectifier: single-phase; Urmax: 400V; If: 1.5A; Ifsm: 50A
Type of bridge rectifier: single-phase
Max. off-state voltage: 0.4kV
Load current: 1.5A
Max. forward impulse current: 50A
Case: MDIP4L
Kind of package: tube
Max. forward voltage: 1.1V
Features of semiconductor devices: glass passivated
Electrical mounting: THT
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BC847BPDW1T3G bc846bpdw1t1-d.pdf
Виробник: ONSEMI
Category: Complementary transistors
Description: Transistor: NPN / PNP; bipolar; 45V; 100mA; 380mW
Type of transistor: NPN / PNP
Polarisation: bipolar
Collector-emitter voltage: 45V
Collector current: 0.1A
Power dissipation: 0.38W
Case: SC70-6; SC88A; SOT363
Mounting: SMD
Frequency: 100MHz
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BC847BPDXV6T1G bc847bpdxv6t1-d.pdf
Виробник: ONSEMI
Category: Complementary transistors
Description: Transistor: NPN / PNP; bipolar; complementary pair; 45V; 0.1A
Type of transistor: NPN / PNP
Polarisation: bipolar
Kind of transistor: complementary pair
Collector-emitter voltage: 45V
Collector current: 0.1A
Power dissipation: 0.5W
Case: SOT563
Current gain: 200...475
Mounting: SMD
Kind of package: reel; tape
Frequency: 100MHz
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SBC847BPDW1T3G bc846bpdw1t1-d.pdf
SBC847BPDW1T3G
Виробник: ONSEMI
Category: Complementary transistors
Description: Transistor: NPN / PNP; bipolar; complementary pair; 45V; 0.1A
Type of transistor: NPN / PNP
Polarisation: bipolar
Kind of transistor: complementary pair
Collector-emitter voltage: 45V
Collector current: 0.1A
Power dissipation: 0.38W
Case: SC70-6; SC88; SOT363
Current gain: 200...475
Mounting: SMD
Kind of package: reel; tape
Frequency: 100MHz
Application: automotive industry
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SBC847BPDXV6T1G bc847bpdxv6t1-d.pdf
Виробник: ONSEMI
Category: Complementary transistors
Description: Transistor: NPN / PNP; bipolar; complementary pair; 45V; 0.1A
Type of transistor: NPN / PNP
Polarisation: bipolar
Kind of transistor: complementary pair
Collector-emitter voltage: 45V
Collector current: 0.1A
Power dissipation: 0.5W
Case: SOT563
Current gain: 200...475
Mounting: SMD
Kind of package: reel; tape
Frequency: 100MHz
Application: automotive industry
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NTGS3433T1G ntgs3433t1-d.pdf
Виробник: ONSEMI
Category: SMD P channel transistors
Description: Transistor: P-MOSFET; unipolar; -12V; -2.35A; Idm: -14A; 1W; TSOP6
Type of transistor: P-MOSFET
Polarisation: unipolar
Drain-source voltage: -12V
Drain current: -2.35A
Pulsed drain current: -14A
Power dissipation: 1W
Case: TSOP6
Gate-source voltage: ±8V
On-state resistance: 75mΩ
Mounting: SMD
Gate charge: 7nC
Kind of package: reel; tape
Kind of channel: enhancement
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MC14023BDR2G MC14001B-D.pdf
MC14023BDR2G
Виробник: ONSEMI
Category: Gates, inverters
Description: IC: digital; NAND; Ch: 3; IN: 3; CMOS; SMD; SO14; 3÷18VDC; -55÷125°C
Type of integrated circuit: digital
Kind of gate: NAND
Number of channels: triple; 3
Number of inputs: 3
Technology: CMOS
Mounting: SMD
Case: SO14
Supply voltage: 3...18V DC
Operating temperature: -55...125°C
Kind of package: reel; tape
Delay time: 130ns
Family: HEF4000B
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MBRS2040LT3G MBRS2040LT3G.PDF
MBRS2040LT3G
Виробник: ONSEMI
Category: SMD Schottky diodes
Description: Diode: Schottky rectifying; SMB; SMD; 40V; 2A; reel,tape
Type of diode: Schottky rectifying
Case: SMB
Mounting: SMD
Max. off-state voltage: 40V
Load current: 2A
Semiconductor structure: single diode
Max. forward voltage: 0.45V
Max. load current: 4A
Kind of package: reel; tape
на замовлення 5347 шт:
термін постачання 14-30 дні (днів)
Кількість Ціна
16+28.92 грн
21+20.14 грн
25+17.79 грн
50+16.03 грн
100+14.44 грн
250+12.34 грн
500+10.83 грн
1000+9.32 грн
2500+9.23 грн
Мінімальне замовлення: 16
В кошику  од. на суму  грн.
SS14 SSxx.pdf
SS14
Виробник: ONSEMI
Category: SMD Schottky diodes
Description: Diode: Schottky rectifying; SMA; SMD; 40V; 1A; reel,tape; 1.1W
Type of diode: Schottky rectifying
Case: SMA
Mounting: SMD
Max. off-state voltage: 40V
Load current: 1A
Semiconductor structure: single diode
Max. forward voltage: 0.5V
Max. forward impulse current: 40A
Kind of package: reel; tape
Power dissipation: 1.1W
на замовлення 7797 шт:
термін постачання 14-30 дні (днів)
Кількість Ціна
25+18.08 грн
30+14.27 грн
34+12.59 грн
50+9.15 грн
100+7.97 грн
250+6.80 грн
500+6.04 грн
1000+5.46 грн
7500+5.04 грн
Мінімальне замовлення: 25
В кошику  од. на суму  грн.
NCV8184DR2G ncv8184-d.pdf
Виробник: ONSEMI
Category: LDO adjustable voltage regulators
Description: IC: voltage regulator; LDO,linear,adjustable; -3÷45V; 0.07A; SO8
Type of integrated circuit: voltage regulator
Kind of voltage regulator: adjustable; LDO; linear
Output voltage: -3...45V
Output current: 70mA
Case: SO8
Mounting: SMD
Kind of package: reel; tape
Number of channels: 1
Application: automotive industry
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NCV8184DTRKG ncv8184-d.pdf
Виробник: ONSEMI
Category: LDO adjustable voltage regulators
Description: IC: voltage regulator; LDO,linear,adjustable; -3÷45V; 0.07A; SMD
Type of integrated circuit: voltage regulator
Kind of voltage regulator: adjustable; LDO; linear
Output voltage: -3...45V
Output current: 70mA
Case: DPAK4
Mounting: SMD
Kind of package: reel; tape
Number of channels: 1
Application: automotive industry
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NCV8184PDR2G ncv8184-d.pdf
Виробник: ONSEMI
Category: LDO adjustable voltage regulators
Description: IC: voltage regulator; LDO,linear,adjustable; -3÷45V; 0.07A; SO8
Type of integrated circuit: voltage regulator
Kind of voltage regulator: adjustable; LDO; linear
Output voltage: -3...45V
Output current: 70mA
Case: SO8
Mounting: SMD
Kind of package: reel; tape
Number of channels: 1
Application: automotive industry
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MC74LVXT4051DR2G mc74lvxt4051-d.pdf
MC74LVXT4051DR2G
Виробник: ONSEMI
Category: Analog multiplexers and switches
Description: IC: digital; demultiplexer,multiplexer; Ch: 1; SO16; 2.5÷6VDC; 80uA
Mounting: SMD
Operating temperature: -55...125°C
Case: SO16
Type of integrated circuit: digital
Technology: CMOS; TTL
Kind of package: reel; tape
Kind of integrated circuit: demultiplexer; multiplexer
Supply voltage: 2.5...6V DC
Quiescent current: 80µA
Number of channels: 1
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MC74LVXT4051DTR2G MC74LVXT4051-D.pdf
Виробник: ONSEMI
Category: Decoders, multiplexers, switches
Description: IC: digital; 8bit,analog,demultiplexer,multiplexer; Ch: 1; IN: 8
Manufacturer series: LVXT
Mounting: SMD
Operating temperature: -55...125°C
Case: TSSOP16
Type of integrated circuit: digital
Technology: CMOS; TTL
Family: LVXT
Kind of package: reel; tape
Kind of integrated circuit: 8bit; analog; demultiplexer; multiplexer
Supply voltage: -6...0V DC; 2.5...6V DC
Number of channels: 1
Number of inputs: 8
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MC74LVXT4051DTRG MC74LVXT4051-D.pdf
Виробник: ONSEMI
Category: Decoders, multiplexers, switches
Description: IC: digital; 8bit,analog,demultiplexer,multiplexer; Ch: 1; IN: 8
Manufacturer series: LVXT
Mounting: SMD
Operating temperature: -55...125°C
Case: TSSOP16
Type of integrated circuit: digital
Technology: CMOS; TTL
Family: LVXT
Kind of package: reel; tape
Kind of integrated circuit: 8bit; analog; demultiplexer; multiplexer
Supply voltage: -6...0V DC; 2.5...6V DC
Number of channels: 1
Number of inputs: 8
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MC74LVXT4052DTG MC74LVXT4052-D.pdf
MC74LVXT4052DTG
Виробник: ONSEMI
Category: Decoders, multiplexers, switches
Description: IC: digital; 4bit,analog,demultiplexer,multiplexer; Ch: 2; IN: 8
Manufacturer series: LVXT
Mounting: SMD
Operating temperature: -55...125°C
Case: TSSOP16
Type of integrated circuit: digital
Technology: CMOS; TTL
Family: LVXT
Kind of package: reel; tape
Kind of integrated circuit: 4bit; analog; demultiplexer; multiplexer
Supply voltage: -6...0V DC; 2.5...6V DC
Number of channels: 2
Number of inputs: 8
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MC74LVXT4052DTRG MC74LVXT4052-D.pdf
Виробник: ONSEMI
Category: Decoders, multiplexers, switches
Description: IC: digital; 4bit,analog,demultiplexer,multiplexer; Ch: 2; IN: 8
Manufacturer series: LVXT
Mounting: SMD
Operating temperature: -55...125°C
Case: TSSOP16
Type of integrated circuit: digital
Technology: CMOS; TTL
Family: LVXT
Kind of package: reel; tape
Kind of integrated circuit: 4bit; analog; demultiplexer; multiplexer
Supply voltage: -6...0V DC; 2.5...6V DC
Number of channels: 2
Number of inputs: 8
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MC74LVXT4053DR2G MC74LVXT4053-D.pdf
MC74LVXT4053DR2G
Виробник: ONSEMI
Category: Decoders, multiplexers, switches
Description: IC: digital; 2bit,analog,demultiplexer,multiplexer; Ch: 3; IN: 6
Manufacturer series: LVXT
Mounting: SMD
Operating temperature: -55...125°C
Case: SOIC16
Type of integrated circuit: digital
Technology: CMOS; TTL
Family: LVXT
Kind of package: reel; tape
Kind of integrated circuit: 2bit; analog; demultiplexer; multiplexer
Supply voltage: -6...0V DC; 2.5...6V DC
Number of channels: 3
Number of inputs: 6
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