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NTD18N06LT4G ONSEMI ntd18n06l-d.pdf Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 60V; 10A; 55W; DPAK
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 60V
Drain current: 10A
Power dissipation: 55W
Case: DPAK
Gate-source voltage: ±15V
On-state resistance: 65mΩ
Mounting: SMD
Kind of package: reel; tape
Kind of channel: enhancement
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FDC6561AN FDC6561AN ONSEMI FDC6561AN.pdf Category: Multi channel transistors
Description: Transistor: N-MOSFET x2; unipolar; 30V; 2.5A; 0.96W; SuperSOT-6
Case: SuperSOT-6
Kind of channel: enhancement
Mounting: SMD
Type of transistor: N-MOSFET x2
Technology: PowerTrench®
Kind of package: reel; tape
Polarisation: unipolar
Gate charge: 3.2nC
On-state resistance: 152mΩ
Power dissipation: 0.96W
Drain current: 2.5A
Gate-source voltage: ±20V
Drain-source voltage: 30V
на замовлення 847 шт:
термін постачання 21-30 дні (днів)
8+62.11 грн
10+41.36 грн
50+28.51 грн
100+24.39 грн
250+20.19 грн
500+17.96 грн
Мінімальне замовлення: 8
В кошику  од. на суму  грн.
GBPC2510 ONSEMI GBPCxx.PDF Category: Square single phase diode bridge rectif.
Description: Bridge rectifier: single-phase; Urmax: 1kV; Ufmax: 1.1V; If: 25A
Type of bridge rectifier: single-phase
Max. off-state voltage: 1kV
Max. forward voltage: 1.1V
Load current: 25A
Max. forward impulse current: 0.3kA
Version: square
Case: GBPC
Electrical mounting: THT
Leads: connectors FASTON
Kind of package: bulk
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GBPC2510W ONSEMI GBPCxx.PDF Category: Square single phase diode bridge rectif.
Description: Bridge rectifier: single-phase; Urmax: 1kV; Ufmax: 1.1V; If: 25A
Type of bridge rectifier: single-phase
Max. off-state voltage: 1kV
Max. forward voltage: 1.1V
Load current: 25A
Max. forward impulse current: 0.3kA
Version: square
Case: GBPC-W
Electrical mounting: THT
Leads: wire Ø 1.0mm
Kind of package: bulk
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1N5356BRLG ONSEMI 1N53xx.PDF Category: THT Zener diodes
Description: Diode: Zener; 5W; 19V; reel,tape; CASE017AA; single diode; 0.5uA
Kind of package: reel; tape
Case: CASE017AA
Semiconductor structure: single diode
Mounting: THT
Type of diode: Zener
Tolerance: ±5%
Leakage current: 0.5µA
Power dissipation: 5W
Zener voltage: 19V
Manufacturer series: 1N53xxB
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MUN5335DW1T1G MUN5335DW1T1G ONSEMI MUN5335DW1.PDF Category: Complementary transistors
Description: Transistor: NPN / PNP; bipolar; BRT,complementary pair; 50V; 0.1A
Type of transistor: NPN / PNP
Polarisation: bipolar
Kind of transistor: BRT; complementary pair
Collector-emitter voltage: 50V
Collector current: 0.1A
Power dissipation: 0.187W
Case: SC70-6; SC88; SOT363
Mounting: SMD
Kind of package: reel; tape
Base resistor: 2.2kΩ
Base-emitter resistor: 47kΩ
на замовлення 5745 шт:
термін постачання 21-30 дні (днів)
28+15.97 грн
46+8.98 грн
65+6.41 грн
100+5.58 грн
500+4.10 грн
1000+3.63 грн
1500+3.39 грн
3000+3.02 грн
Мінімальне замовлення: 28
В кошику  од. на суму  грн.
MUN5331DW1T1G MUN5331DW1T1G ONSEMI dtc123ep-d.pdf Category: Complementary transistors
Description: Transistor: NPN / PNP; bipolar; BRT,complementary pair; 50V
Type of transistor: NPN / PNP
Polarisation: bipolar
Kind of transistor: BRT; complementary pair
Collector-emitter voltage: 50V
Collector current: 0.1A
Power dissipation: 0.385W
Case: SC70-6; SC88; SOT363
Mounting: SMD
Kind of package: reel; tape
Base resistor: 2.2kΩ
Base-emitter resistor: 2.2kΩ
Current gain: 8...15
Quantity in set/package: 3000pcs.
на замовлення 3000 шт:
термін постачання 21-30 дні (днів)
15+31.06 грн
24+17.47 грн
100+9.86 грн
500+6.01 грн
1000+3.68 грн
3000+3.24 грн
Мінімальне замовлення: 15
В кошику  од. на суму  грн.
MUN5333DW1T1G MUN5333DW1T1G ONSEMI dtc143zp-d.pdf Category: Complementary transistors
Description: Transistor: NPN / PNP; bipolar; BRT,complementary pair; 50V; 0.1A
Type of transistor: NPN / PNP
Polarisation: bipolar
Kind of transistor: BRT; complementary pair
Collector-emitter voltage: 50V
Collector current: 0.1A
Power dissipation: 0.25W
Case: SC70-6; SC88; SOT363
Mounting: SMD
Kind of package: reel; tape
Base resistor: 4.7kΩ
Base-emitter resistor: 47kΩ
Current gain: 80...200
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MUN5332DW1T1G ONSEMI dtc143ep-d.pdf Category: Complementary transistors
Description: Transistor: NPN / PNP; bipolar; BRT,complementary pair; 50V
Type of transistor: NPN / PNP
Polarisation: bipolar
Kind of transistor: BRT; complementary pair
Collector-emitter voltage: 50V
Collector current: 0.1A
Power dissipation: 0.385W
Case: SC70-6; SC88; SOT363
Mounting: SMD
Kind of package: reel; tape
Base resistor: 4.7kΩ
Base-emitter resistor: 4.7kΩ
Current gain: 15...30
Quantity in set/package: 3000pcs.
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MUN5330DW1T1G ONSEMI dtc113ep-d.pdf Category: Complementary transistors
Description: Transistor: NPN / PNP; bipolar; BRT,complementary pair; 50V
Type of transistor: NPN / PNP
Polarisation: bipolar
Kind of transistor: BRT; complementary pair
Collector-emitter voltage: 50V
Collector current: 0.1A
Power dissipation: 0.385W
Case: SC70-6; SC88; SOT363
Mounting: SMD
Kind of package: reel; tape
Base resistor: 1kΩ
Base-emitter resistor: 1kΩ
Current gain: 3...5
Quantity in set/package: 3000pcs.
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MUN5334DW1T1G ONSEMI dtc124xp-d.pdf Category: Complementary transistors
Description: Transistor: NPN / PNP; bipolar; BRT,complementary pair; 50V
Type of transistor: NPN / PNP
Polarisation: bipolar
Kind of transistor: BRT; complementary pair
Collector-emitter voltage: 50V
Collector current: 0.1A
Power dissipation: 0.385W
Case: SC70-6; SC88; SOT363
Mounting: SMD
Kind of package: reel; tape
Base resistor: 22kΩ
Base-emitter resistor: 47kΩ
Current gain: 80...150
Quantity in set/package: 3000pcs.
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MUN5335DW1T2G ONSEMI dtc123jp-d.pdf Category: Complementary transistors
Description: Transistor: NPN / PNP; bipolar
Type of transistor: NPN / PNP
Polarisation: bipolar
Mounting: SMD
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MUN5338DW1T3G ONSEMI mun5338-d.pdf Category: Complementary transistors
Description: Transistor: NPN / PNP; bipolar; BRT,complementary pair; 50V
Type of transistor: NPN / PNP
Polarisation: bipolar
Kind of transistor: BRT; complementary pair
Collector-emitter voltage: 50V
Collector current: 0.1A
Case: SC70-6; SC88; SOT363
Mounting: SMD
Kind of package: reel; tape
Base resistor: 4.7/47kΩ
Base-emitter resistor: 10/47kΩ
Quantity in set/package: 10000pcs.
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SMUN5330DW1T1G SMUN5330DW1T1G ONSEMI dtc113ep-d.pdf Category: Complementary transistors
Description: Transistor: NPN / PNP; bipolar; BRT,complementary pair; 50V; 0.1A
Type of transistor: NPN / PNP
Polarisation: bipolar
Kind of transistor: BRT; complementary pair
Collector-emitter voltage: 50V
Collector current: 0.1A
Power dissipation: 0.25W
Case: SC70-6; SC88; SOT363
Mounting: SMD
Kind of package: reel; tape
Base resistor: 1kΩ
Application: automotive industry
Base-emitter resistor: 1kΩ
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SMUN5335DW1T2G SMUN5335DW1T2G ONSEMI dtc123jp-d.pdf Category: Complementary transistors
Description: Transistor: NPN / PNP; bipolar; BRT,complementary pair; 50V; 0.1A
Type of transistor: NPN / PNP
Polarisation: bipolar
Kind of transistor: BRT; complementary pair
Collector-emitter voltage: 50V
Collector current: 0.1A
Power dissipation: 0.25W
Case: SC70-6; SC88; SOT363
Mounting: SMD
Kind of package: reel; tape
Base resistor: 2.2kΩ
Application: automotive industry
Base-emitter resistor: 47kΩ
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NSVMUN5331DW1T1G ONSEMI dtc123ep-d.pdf Category: Complementary transistors
Description: Transistor: NPN / PNP; bipolar; BRT,complementary pair; 50V
Type of transistor: NPN / PNP
Polarisation: bipolar
Kind of transistor: BRT; complementary pair
Collector-emitter voltage: 50V
Collector current: 0.1A
Power dissipation: 0.385W
Case: SC70-6; SC88; SOT363
Mounting: SMD
Kind of package: reel; tape
Base resistor: 2.2kΩ
Application: automotive industry
Base-emitter resistor: 2.2kΩ
Current gain: 8...15
Quantity in set/package: 3000pcs.
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NSVMUN5332DW1T1G ONSEMI dtc143ep-d.pdf Category: Complementary transistors
Description: Transistor: NPN / PNP; bipolar; BRT,complementary pair; 50V
Type of transistor: NPN / PNP
Polarisation: bipolar
Kind of transistor: BRT; complementary pair
Collector-emitter voltage: 50V
Collector current: 0.1A
Power dissipation: 0.385W
Case: SC70-6; SC88; SOT363
Mounting: SMD
Kind of package: reel; tape
Base resistor: 4.7kΩ
Application: automotive industry
Base-emitter resistor: 4.7kΩ
Current gain: 15...30
Quantity in set/package: 3000pcs.
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NSVMUN5333DW1T1G ONSEMI dtc143zp-d.pdf Category: Complementary transistors
Description: Transistor: NPN / PNP; bipolar; BRT,complementary pair; 50V
Type of transistor: NPN / PNP
Polarisation: bipolar
Kind of transistor: BRT; complementary pair
Collector-emitter voltage: 50V
Collector current: 0.1A
Power dissipation: 0.385W
Case: SC70-6; SC88; SOT363
Mounting: SMD
Kind of package: reel; tape
Base resistor: 4.7kΩ
Application: automotive industry
Base-emitter resistor: 47kΩ
Current gain: 80...200
Quantity in set/package: 3000pcs.
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NSVMUN5334DW1T1G ONSEMI dtc124xp-d.pdf Category: Complementary transistors
Description: Transistor: NPN / PNP; bipolar; BRT,complementary pair; 50V
Type of transistor: NPN / PNP
Polarisation: bipolar
Kind of transistor: BRT; complementary pair
Collector-emitter voltage: 50V
Collector current: 0.1A
Power dissipation: 0.385W
Case: SC70-6; SC88; SOT363
Mounting: SMD
Kind of package: reel; tape
Base resistor: 22kΩ
Application: automotive industry
Base-emitter resistor: 47kΩ
Current gain: 80...150
Quantity in set/package: 3000pcs.
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NSBC114YDP6T5G ONSEMI dtc114yd-d.pdf Category: NPN SMD transistors
Description: Transistor: NPN x2; bipolar; BRT; 50V; 100mA; 408mW; SOT963; R1: 10kΩ
Type of transistor: NPN x2
Polarisation: bipolar
Kind of transistor: BRT
Collector-emitter voltage: 50V
Collector current: 0.1A
Power dissipation: 408mW
Case: SOT963
Current gain: 80...140
Mounting: SMD
Quantity in set/package: 8000pcs.
Kind of package: reel; tape
Base resistor: 10kΩ
Base-emitter resistor: 47kΩ
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NSBC114TDXV6T1G ONSEMI dtc114td-d.pdf Category: NPN SMD transistors
Description: Transistor: NPN x2; bipolar; BRT; 50V; 100mA; 500mW; SOT563; 10kΩ
Type of transistor: NPN x2
Polarisation: bipolar
Kind of transistor: BRT
Collector-emitter voltage: 50V
Collector current: 0.1A
Power dissipation: 0.5W
Case: SOT563
Current gain: 160...350
Mounting: SMD
Quantity in set/package: 4000pcs.
Kind of package: reel; tape
Base resistor: 10kΩ
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NSBC114EDP6T5G ONSEMI dtc114ed-d.pdf Category: NPN SMD transistors
Description: Transistor: NPN x2; bipolar; BRT; 50V; 100mA; 408mW; SOT963; R1: 10kΩ
Type of transistor: NPN x2
Polarisation: bipolar
Kind of transistor: BRT
Collector-emitter voltage: 50V
Collector current: 0.1A
Power dissipation: 408mW
Case: SOT963
Current gain: 35...60
Mounting: SMD
Quantity in set/package: 8000pcs.
Kind of package: reel; tape
Base resistor: 10kΩ
Base-emitter resistor: 10kΩ
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NSBC114EDXV6T1G ONSEMI dtc114ed-d.pdf Category: NPN SMD transistors
Description: Transistor: NPN x2; bipolar; BRT; 50V; 100mA; 500mW; SOT563; R1: 10kΩ
Type of transistor: NPN x2
Polarisation: bipolar
Kind of transistor: BRT
Collector-emitter voltage: 50V
Collector current: 0.1A
Power dissipation: 0.5W
Case: SOT563
Current gain: 35...60
Mounting: SMD
Quantity in set/package: 4000pcs.
Kind of package: reel; tape
Base resistor: 10kΩ
Base-emitter resistor: 10kΩ
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NSBC114EF3T5G ONSEMI dtc114e-d.pdf Category: NPN SMD transistors
Description: Transistor: NPN; bipolar; BRT; 50V; 100mA; 297mW; SOT1123; R1: 10kΩ
Type of transistor: NPN
Polarisation: bipolar
Kind of transistor: BRT
Collector-emitter voltage: 50V
Collector current: 0.1A
Power dissipation: 297mW
Case: SOT1123
Current gain: 35...60
Mounting: SMD
Quantity in set/package: 8000pcs.
Kind of package: reel; tape
Base resistor: 10kΩ
Base-emitter resistor: 10kΩ
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NSBC114EPDP6T5G ONSEMI dtc114ep-d.pdf Category: Complementary transistors
Description: Transistor: NPN / PNP; bipolar; BRT,complementary pair; 50V
Type of transistor: NPN / PNP
Polarisation: bipolar
Kind of transistor: BRT; complementary pair
Collector-emitter voltage: 50V
Collector current: 0.1A
Power dissipation: 408mW
Case: SOT963
Current gain: 35...60
Mounting: SMD
Quantity in set/package: 8000pcs.
Kind of package: reel; tape
Base resistor: 10kΩ
Base-emitter resistor: 10kΩ
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NSBC114EPDXV6T1G ONSEMI dtc114ep-d.pdf Category: Complementary transistors
Description: Transistor: NPN / PNP; bipolar; BRT,complementary pair; 50V
Type of transistor: NPN / PNP
Polarisation: bipolar
Kind of transistor: BRT; complementary pair
Collector-emitter voltage: 50V
Collector current: 0.1A
Power dissipation: 0.5W
Case: SOT563
Current gain: 35...60
Mounting: SMD
Quantity in set/package: 4000pcs.
Kind of package: reel; tape
Base resistor: 10kΩ
Base-emitter resistor: 10kΩ
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NSBC114TDP6T5G ONSEMI dtc114td-d.pdf Category: NPN SMD transistors
Description: Transistor: NPN x2; bipolar; BRT; 50V; 100mA; 408mW; SOT963; 10kΩ
Type of transistor: NPN x2
Polarisation: bipolar
Kind of transistor: BRT
Collector-emitter voltage: 50V
Collector current: 0.1A
Power dissipation: 408mW
Case: SOT963
Current gain: 160...350
Mounting: SMD
Quantity in set/package: 8000pcs.
Kind of package: reel; tape
Base resistor: 10kΩ
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NSBC114TPDXV6T1G ONSEMI dtc114yp-d.pdf Category: Complementary transistors
Description: Transistor: NPN / PNP; bipolar; BRT,complementary pair; 50V; 10kΩ
Type of transistor: NPN / PNP
Polarisation: bipolar
Kind of transistor: BRT; complementary pair
Collector-emitter voltage: 50V
Collector current: 0.1A
Power dissipation: 0.5W
Case: SOT563
Current gain: 160...350
Mounting: SMD
Quantity in set/package: 4000pcs.
Kind of package: reel; tape
Base resistor: 10kΩ
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NSBC114YDXV6T1G ONSEMI dtc114yd-d.pdf ONSM-S-A0004900022-1.pdf?t.download=true&u=5oefqw Category: NPN SMD transistors
Description: Transistor: NPN x2; bipolar; BRT; 50V; 100mA; 500mW; SOT563; R1: 10kΩ
Type of transistor: NPN x2
Polarisation: bipolar
Kind of transistor: BRT
Collector-emitter voltage: 50V
Collector current: 0.1A
Power dissipation: 0.5W
Case: SOT563
Current gain: 80...140
Mounting: SMD
Quantity in set/package: 4000pcs.
Kind of package: reel; tape
Base resistor: 10kΩ
Base-emitter resistor: 47kΩ
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NSBC114YF3T5G ONSEMI dtc114y-d.pdf Category: NPN SMD transistors
Description: Transistor: NPN; bipolar; BRT; 50V; 100mA; 297mW; SOT1123; R1: 10kΩ
Type of transistor: NPN
Polarisation: bipolar
Kind of transistor: BRT
Collector-emitter voltage: 50V
Collector current: 0.1A
Power dissipation: 297mW
Case: SOT1123
Current gain: 80...140
Mounting: SMD
Quantity in set/package: 8000pcs.
Kind of package: reel; tape
Base resistor: 10kΩ
Base-emitter resistor: 47kΩ
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NSBC114YPDP6T5G ONSEMI dtc114yp-d.pdf Category: Complementary transistors
Description: Transistor: NPN / PNP; bipolar; BRT,complementary pair; 50V
Type of transistor: NPN / PNP
Polarisation: bipolar
Kind of transistor: BRT; complementary pair
Collector-emitter voltage: 50V
Collector current: 0.1A
Power dissipation: 408mW
Case: SOT963
Current gain: 80...140
Mounting: SMD
Quantity in set/package: 8000pcs.
Kind of package: reel; tape
Base resistor: 10kΩ
Base-emitter resistor: 47kΩ
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NSBC114YPDXV6T1G ONSEMI dtc114yp-d.pdf Category: Complementary transistors
Description: Transistor: NPN / PNP; bipolar; BRT,complementary pair; 50V
Type of transistor: NPN / PNP
Polarisation: bipolar
Kind of transistor: BRT; complementary pair
Collector-emitter voltage: 50V
Collector current: 0.1A
Power dissipation: 0.5W
Case: SOT563
Current gain: 80...140
Mounting: SMD
Quantity in set/package: 4000pcs.
Kind of package: reel; tape
Base resistor: 10kΩ
Base-emitter resistor: 47kΩ
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NSVBC114EDXV6T1G ONSEMI dtc114ed-d.pdf Category: NPN SMD transistors
Description: Transistor: NPN x2; bipolar; BRT; 50V; 100mA; 500mW; SOT563; R1: 10kΩ
Type of transistor: NPN x2
Polarisation: bipolar
Kind of transistor: BRT
Collector-emitter voltage: 50V
Collector current: 0.1A
Power dissipation: 0.5W
Case: SOT563
Current gain: 35...60
Mounting: SMD
Quantity in set/package: 4000pcs.
Kind of package: reel; tape
Base resistor: 10kΩ
Application: automotive industry
Base-emitter resistor: 10kΩ
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NSVBC114YDXV6T1G ONSEMI dtc114yd-d.pdf Category: Complementary transistors
Description: Transistor: NPN / PNP; bipolar; BRT,complementary pair; 50V
Type of transistor: NPN / PNP
Polarisation: bipolar
Kind of transistor: BRT; complementary pair
Collector-emitter voltage: 50V
Collector current: 0.1A
Power dissipation: 0.5W
Case: SOT563
Current gain: 80...140
Mounting: SMD
Quantity in set/package: 4000pcs.
Kind of package: reel; tape
Base resistor: 10kΩ
Application: automotive industry
Base-emitter resistor: 47kΩ
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NSVBC114YPDXV6T1G ONSEMI dtc114yp-d.pdf Category: Complementary transistors
Description: Transistor: NPN / PNP; bipolar; BRT,complementary pair; 50V
Type of transistor: NPN / PNP
Polarisation: bipolar
Kind of transistor: BRT; complementary pair
Collector-emitter voltage: 50V
Collector current: 0.1A
Power dissipation: 0.5W
Case: SOT563
Current gain: 80...140
Mounting: SMD
Quantity in set/package: 4000pcs.
Kind of package: reel; tape
Base resistor: 10kΩ
Application: automotive industry
Base-emitter resistor: 47kΩ
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NCV21872DMR2G NCV21872DMR2G ONSEMI ncs21871-d.pdf Category: SMD operational amplifiers
Description: IC: operational amplifier; 270kHz; Ch: 2; 1.8÷5.5VDC; Micro8
Type of integrated circuit: operational amplifier
Bandwidth: 270kHz
Number of channels: dual; 2
Mounting: SMT
Voltage supply range: 1.8...5.5V DC
Case: Micro8
Operating temperature: -40...125°C
Slew rate: 0.1V/μs
Integrated circuit features: rail-to-rail; zero-drift
Input offset voltage: 0.045mV
Kind of package: reel; tape
Input bias current: 0.4nA
Input offset current: 800pA
на замовлення 3000 шт:
термін постачання 21-30 дні (днів)
6+76.31 грн
10+43.34 грн
25+37.82 грн
100+31.06 грн
250+27.27 грн
500+26.78 грн
Мінімальне замовлення: 6
В кошику  од. на суму  грн.
NCV333ASN2T1G ONSEMI ncs333-d.pdf Category: SMD operational amplifiers
Description: IC: operational amplifier; 350kHz; Ch: 1; 1.8÷5.5VDC; SOT23-5
Type of integrated circuit: operational amplifier
Bandwidth: 350kHz
Number of channels: single; 1
Mounting: SMT
Voltage supply range: 1.8...5.5V DC
Case: SOT23-5
Operating temperature: -40...125°C
Slew rate: 0.15V/μs
Integrated circuit features: zero-drift
Input offset voltage: 30µV
Kind of package: reel; tape
Input bias current: 0.2nA
Input offset current: 400pA
на замовлення 2900 шт:
термін постачання 21-30 дні (днів)
10+47.92 грн
14+31.31 грн
25+28.26 грн
50+26.70 грн
Мінімальне замовлення: 10
В кошику  од. на суму  грн.
NVMFWS1D5N08XT1G ONSEMI nvmfws1d5n08x-d.pdf Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 80V; 253A; Idm: 1071A; 194W; DFNW5
Type of transistor: N-MOSFET
Polarisation: unipolar
Mounting: SMD
Kind of package: reel; tape
Gate charge: 83nC
On-state resistance: 1.43mΩ
Gate-source voltage: ±20V
Drain-source voltage: 80V
Power dissipation: 194W
Drain current: 253A
Pulsed drain current: 1071A
Case: DFNW5
Kind of channel: enhancement
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NTMFWS1D5N08XT1G ONSEMI ntmfws1d5n08x-d.pdf Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 80V; 253A; Idm: 1071A; 194W; DFNW5
Type of transistor: N-MOSFET
Polarisation: unipolar
Mounting: SMD
Kind of package: reel; tape
Gate charge: 121nC
On-state resistance: 1.43mΩ
Gate-source voltage: ±20V
Drain-source voltage: 80V
Power dissipation: 194W
Drain current: 253A
Pulsed drain current: 1071A
Case: DFNW5
Kind of channel: enhancement
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NVMFWS1D9N08XT1G ONSEMI nvmfws1d9n08x-d.pdf Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 80V; 201A; Idm: 866A; 164W; DFNW5
Type of transistor: N-MOSFET
Polarisation: unipolar
Mounting: SMD
Kind of package: reel; tape
Gate charge: 63nC
On-state resistance: 1.9mΩ
Gate-source voltage: ±20V
Drain-source voltage: 80V
Power dissipation: 164W
Drain current: 201A
Pulsed drain current: 866A
Case: DFNW5
Kind of channel: enhancement
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NVMFWS2D1N08XT1G ONSEMI nvmfws2d1n08x-d.pdf Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 80V; 181A; Idm: 761A; 148W; DFNW5
Type of transistor: N-MOSFET
Polarisation: unipolar
Mounting: SMD
Kind of package: reel; tape
Gate charge: 53nC
On-state resistance: 2.1mΩ
Gate-source voltage: ±20V
Drain-source voltage: 80V
Power dissipation: 148W
Drain current: 181A
Pulsed drain current: 761A
Case: DFNW5
Kind of channel: enhancement
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NVMFWS2D5N08XT1G ONSEMI nvmfws2d5n08x-d.pdf Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 80V; 156A; Idm: 640A; 133W; DFNW5
Type of transistor: N-MOSFET
Polarisation: unipolar
Mounting: SMD
Kind of package: reel; tape
Gate charge: 45nC
On-state resistance: 2.55mΩ
Gate-source voltage: ±20V
Drain-source voltage: 80V
Power dissipation: 133W
Drain current: 156A
Pulsed drain current: 640A
Case: DFNW5
Kind of channel: enhancement
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NVMFWS4D5N08XT1G ONSEMI Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar
Type of transistor: N-MOSFET
Polarisation: unipolar
Mounting: SMD
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В кошику  од. на суму  грн.
NVMFWS016N06CT1G ONSEMI nvmfs016n06c-d.pdf Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 60V; 33A; Idm: 226A; 18W; DFNW5
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 60V
Drain current: 33A
Pulsed drain current: 226A
Power dissipation: 18W
Case: DFNW5
Gate-source voltage: ±20V
On-state resistance: 15.6mΩ
Mounting: SMD
Gate charge: 6.9nC
Kind of package: reel; tape
Kind of channel: enhancement
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1N5401RLG 1N5401RLG ONSEMI 1N540x.PDF Category: THT universal diodes
Description: Diode: rectifying; THT; 100V; 3A; reel,tape; Ifsm: 200A; DO27
Type of diode: rectifying
Mounting: THT
Max. off-state voltage: 100V
Load current: 3A
Semiconductor structure: single diode
Kind of package: reel; tape
Max. forward impulse current: 200A
Case: DO27
Max. forward voltage: 1V
Leakage current: 50µA
на замовлення 250 шт:
термін постачання 21-30 дні (днів)
17+27.51 грн
34+12.28 грн
50+10.55 грн
100+10.22 грн
Мінімальне замовлення: 17
В кошику  од. на суму  грн.
1N5401G 1N5401G ONSEMI 1N540x.PDF Category: THT universal diodes
Description: Diode: rectifying; THT; 100V; 3A; bulk; Ifsm: 200A; DO27; Ufmax: 1V
Type of diode: rectifying
Mounting: THT
Max. off-state voltage: 100V
Load current: 3A
Semiconductor structure: single diode
Kind of package: bulk
Max. forward impulse current: 200A
Case: DO27
Max. forward voltage: 1V
Leakage current: 50µA
на замовлення 454 шт:
термін постачання 21-30 дні (днів)
19+23.96 грн
27+15.82 грн
100+11.04 грн
250+10.71 грн
Мінімальне замовлення: 19
В кошику  од. на суму  грн.
74LVTH245MTC 74LVTH245MTC ONSEMI 74LVTH245.pdf Category: Buffers, transceivers, drivers
Description: IC: digital; bidirectional,transceiver; Ch: 8; BiCMOS; SMD; TSSOP20
Type of integrated circuit: digital
Kind of integrated circuit: bidirectional; transceiver
Number of channels: 8
Mounting: SMD
Case: TSSOP20
Operating temperature: -40...85°C
Kind of output: 3-state
Technology: BiCMOS
Kind of package: tube
Supply voltage: 2.7...3.6V DC
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В кошику  од. на суму  грн.
BC847BM3T5G BC847BM3T5G ONSEMI bc847bm3-d.pdf Category: NPN SMD transistors
Description: Transistor: NPN; bipolar; 45V; 0.1A; 0.26W; SOT723
Type of transistor: NPN
Polarisation: bipolar
Collector-emitter voltage: 45V
Collector current: 0.1A
Power dissipation: 0.26W
Case: SOT723
Current gain: 200...450
Mounting: SMD
Kind of package: reel; tape
Frequency: 100MHz
на замовлення 8000 шт:
термін постачання 21-30 дні (днів)
25+17.75 грн
31+13.68 грн
50+9.51 грн
100+7.81 грн
250+5.99 грн
500+4.94 грн
1000+4.17 грн
5000+3.09 грн
Мінімальне замовлення: 25
В кошику  од. на суму  грн.
FCB070N65S3
+1
 		FCB070N65S3 ONSEMI fcb070n65s3-d.pdf Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 650V; 44A; 312W; D2PAK
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 650V
Drain current: 44A
Power dissipation: 312W
Case: D2PAK
Gate-source voltage: ±30V
On-state resistance: 70mΩ
Mounting: SMD
Kind of package: reel; tape
Kind of channel: enhancement
на замовлення 640 шт:
термін постачання 21-30 дні (днів)
2+424.15 грн
10+305.69 грн
25+297.45 грн
Мінімальне замовлення: 2
В кошику  од. на суму  грн.
NTBL070N65S3 ONSEMI ntbl070n65s3-d.pdf Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 650V; 44A; Idm: 110A; 312W; H-PSOF8L
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 650V
Drain current: 44A
Pulsed drain current: 110A
Power dissipation: 312W
Case: H-PSOF8L
Gate-source voltage: ±30V
On-state resistance: 70mΩ
Mounting: SMD
Gate charge: 82nC
Kind of package: reel; tape
Kind of channel: enhancement
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1N5363BG 1N5363BG ONSEMI 1N53xx.PDF Category: THT Zener diodes
Description: Diode: Zener; 5W; 30V; bulk; CASE017AA; single diode; 0.5uA; 1N53xxB
Type of diode: Zener
Power dissipation: 5W
Zener voltage: 30V
Kind of package: bulk
Case: CASE017AA
Mounting: THT
Tolerance: ±5%
Semiconductor structure: single diode
Leakage current: 0.5µA
Manufacturer series: 1N53xxB
на замовлення 929 шт:
термін постачання 21-30 дні (днів)
16+29.28 грн
18+23.73 грн
20+21.51 грн
100+14.91 грн
250+12.61 грн
500+12.36 грн
Мінімальне замовлення: 16
В кошику  од. на суму  грн.
1N5363BRLG ONSEMI 1N53xx.PDF description Category: THT Zener diodes
Description: Diode: Zener; 5W; 30V; reel,tape; CASE017AA; single diode; 0.5uA
Type of diode: Zener
Power dissipation: 5W
Zener voltage: 30V
Kind of package: reel; tape
Case: CASE017AA
Mounting: THT
Tolerance: ±5%
Semiconductor structure: single diode
Leakage current: 0.5µA
Manufacturer series: 1N53xxB
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LM833DR2G LM833DR2G ONSEMI LM833DR2G.PDF Category: SMD operational amplifiers
Description: IC: operational amplifier; 15MHz; Ch: 2; ±5÷18VDC,10÷36VDC; SO8
Type of integrated circuit: operational amplifier
Bandwidth: 15MHz
Number of channels: dual; 2
Mounting: SMT
Voltage supply range: ± 5...18V DC; 10...36V DC
Case: SO8
Operating temperature: -40...85°C
Slew rate: 7V/μs
Input offset voltage: 0.3mV
Kind of package: reel; tape
Integrated circuit features: low noise
на замовлення 2956 шт:
термін постачання 21-30 дні (днів)
22+20.41 грн
27+15.49 грн
30+13.76 грн
35+11.87 грн
100+9.81 грн
200+9.06 грн
250+8.90 грн
500+8.40 грн
1000+8.32 грн
Мінімальне замовлення: 22
В кошику  од. на суму  грн.
MC14584BDG MC14584BDG ONSEMI MC14584BDG.PDF Category: Gates, inverters
Description: IC: digital; NOT; Ch: 6; IN: 1; CMOS; SMD; SO14; 3÷18VDC; -55÷125°C
Supply voltage: 3...18V DC
Technology: CMOS
Type of integrated circuit: digital
Case: SO14
Family: HEF4000B
Number of channels: hex; 6
Kind of gate: NOT
Kind of package: tube
Mounting: SMD
Kind of input: with Schmitt trigger
Operating temperature: -55...125°C
Delay time: 100ns
Number of inputs: 1
на замовлення 10 шт:
термін постачання 21-30 дні (днів)
10+41.20 грн
Мінімальне замовлення: 10
В кошику  од. на суму  грн.
MC14584BDTR2G MC14584BDTR2G ONSEMI MC14584B-D.pdf Category: Gates, inverters
Description: IC: digital; NOT; Ch: 6; IN: 1; CMOS; SMD; TSSOP14; 3÷18VDC; -55÷125°C
Supply voltage: 3...18V DC
Technology: CMOS
Type of integrated circuit: digital
Case: TSSOP14
Family: HEF4000B
Number of channels: hex; 6
Kind of gate: NOT
Kind of package: reel; tape
Mounting: SMD
Kind of input: with Schmitt trigger
Operating temperature: -55...125°C
Delay time: 100ns
Number of inputs: 1
на замовлення 2073 шт:
термін постачання 21-30 дні (днів)
13+35.49 грн
18+23.90 грн
25+21.26 грн
100+19.03 грн
Мінімальне замовлення: 13
В кошику  од. на суму  грн.
FDMQ8205 ONSEMI FDMQ8205.pdf Category: Integrated circuits - others
Description: IC: driver; single phase transistor bridge; ideal diode bridge
Mounting: SMD
Case: WDFN12
Kind of package: reel; tape
Type of integrated circuit: driver
Technology: GreenBridge™ 2
Kind of integrated circuit: ideal diode bridge
Topology: single phase transistor bridge
Operating temperature: -40...85°C
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SURA8205T3G-VF01 ONSEMI mura205t3-d.pdf Category: SMD universal diodes
Description: Diode: rectifying; SMD; 50V; 2A; 30ns; SMA; Ufmax: 940mV; reel,tape
Type of diode: rectifying
Mounting: SMD
Max. off-state voltage: 50V
Load current: 2A
Reverse recovery time: 30ns
Semiconductor structure: single diode
Case: SMA
Max. forward voltage: 0.94V
Kind of package: reel; tape
Application: automotive industry
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ESD5B5.0ST5G ONSEMI esd5b5.0st1-d.pdf Category: Bidirectional TVS SMD diodes
Description: Diode: TVS; 50W; 6.8V; bidirectional; SOD523; reel,tape; ESD
Type of diode: TVS
Max. off-state voltage: 5V
Breakdown voltage: 6.8V
Semiconductor structure: bidirectional
Case: SOD523
Mounting: SMD
Kind of package: reel; tape
Leakage current: 1µA
Version: ESD
Peak pulse power dissipation: 50W
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ESD5B5.0ST5G ONSEMI esd5b5.0st1-d.pdf Category: Bidirectional TVS SMD diodes
Description: Diode: TVS; 50W; 5.8V; bidirectional; SOD523F
Type of diode: TVS
Max. off-state voltage: 5V
Breakdown voltage: 5.8V
Semiconductor structure: bidirectional
Case: SOD523F
Mounting: SMD
Leakage current: 1µA
Peak pulse power dissipation: 50W
на замовлення 8000 шт:
термін постачання 21-30 дні (днів)
8000+3.09 грн
Мінімальне замовлення: 8000
В кошику  од. на суму  грн.
SBC856BLT3G SBC856BLT3G ONSEMI BC856_7_8.PDF Category: PNP SMD transistors
Description: Transistor: PNP; bipolar; 65V; 0.1A; 0.225/0.3W; SOT23,TO236AB
Type of transistor: PNP
Polarisation: bipolar
Collector-emitter voltage: 65V
Collector current: 0.1A
Power dissipation: 0.225/0.3W
Case: SOT23; TO236AB
Current gain: 220...475
Mounting: SMD
Kind of package: reel; tape
Frequency: 100MHz
Application: automotive industry
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NTD18N06LT4G ntd18n06l-d.pdf
Виробник: ONSEMI
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 60V; 10A; 55W; DPAK
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 60V
Drain current: 10A
Power dissipation: 55W
Case: DPAK
Gate-source voltage: ±15V
On-state resistance: 65mΩ
Mounting: SMD
Kind of package: reel; tape
Kind of channel: enhancement
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FDC6561AN FDC6561AN.pdf
FDC6561AN
Виробник: ONSEMI
Category: Multi channel transistors
Description: Transistor: N-MOSFET x2; unipolar; 30V; 2.5A; 0.96W; SuperSOT-6
Case: SuperSOT-6
Kind of channel: enhancement
Mounting: SMD
Type of transistor: N-MOSFET x2
Technology: PowerTrench®
Kind of package: reel; tape
Polarisation: unipolar
Gate charge: 3.2nC
On-state resistance: 152mΩ
Power dissipation: 0.96W
Drain current: 2.5A
Gate-source voltage: ±20V
Drain-source voltage: 30V
на замовлення 847 шт:
термін постачання 21-30 дні (днів)
Кількість Ціна
8+62.11 грн
10+41.36 грн
50+28.51 грн
100+24.39 грн
250+20.19 грн
500+17.96 грн
Мінімальне замовлення: 8
В кошику  од. на суму  грн.
GBPC2510 GBPCxx.PDF
Виробник: ONSEMI
Category: Square single phase diode bridge rectif.
Description: Bridge rectifier: single-phase; Urmax: 1kV; Ufmax: 1.1V; If: 25A
Type of bridge rectifier: single-phase
Max. off-state voltage: 1kV
Max. forward voltage: 1.1V
Load current: 25A
Max. forward impulse current: 0.3kA
Version: square
Case: GBPC
Electrical mounting: THT
Leads: connectors FASTON
Kind of package: bulk
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GBPC2510W GBPCxx.PDF
Виробник: ONSEMI
Category: Square single phase diode bridge rectif.
Description: Bridge rectifier: single-phase; Urmax: 1kV; Ufmax: 1.1V; If: 25A
Type of bridge rectifier: single-phase
Max. off-state voltage: 1kV
Max. forward voltage: 1.1V
Load current: 25A
Max. forward impulse current: 0.3kA
Version: square
Case: GBPC-W
Electrical mounting: THT
Leads: wire Ø 1.0mm
Kind of package: bulk
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1N5356BRLG 1N53xx.PDF
Виробник: ONSEMI
Category: THT Zener diodes
Description: Diode: Zener; 5W; 19V; reel,tape; CASE017AA; single diode; 0.5uA
Kind of package: reel; tape
Case: CASE017AA
Semiconductor structure: single diode
Mounting: THT
Type of diode: Zener
Tolerance: ±5%
Leakage current: 0.5µA
Power dissipation: 5W
Zener voltage: 19V
Manufacturer series: 1N53xxB
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MUN5335DW1T1G MUN5335DW1.PDF
MUN5335DW1T1G
Виробник: ONSEMI
Category: Complementary transistors
Description: Transistor: NPN / PNP; bipolar; BRT,complementary pair; 50V; 0.1A
Type of transistor: NPN / PNP
Polarisation: bipolar
Kind of transistor: BRT; complementary pair
Collector-emitter voltage: 50V
Collector current: 0.1A
Power dissipation: 0.187W
Case: SC70-6; SC88; SOT363
Mounting: SMD
Kind of package: reel; tape
Base resistor: 2.2kΩ
Base-emitter resistor: 47kΩ
на замовлення 5745 шт:
термін постачання 21-30 дні (днів)
Кількість Ціна
28+15.97 грн
46+8.98 грн
65+6.41 грн
100+5.58 грн
500+4.10 грн
1000+3.63 грн
1500+3.39 грн
3000+3.02 грн
Мінімальне замовлення: 28
В кошику  од. на суму  грн.
MUN5331DW1T1G dtc123ep-d.pdf
MUN5331DW1T1G
Виробник: ONSEMI
Category: Complementary transistors
Description: Transistor: NPN / PNP; bipolar; BRT,complementary pair; 50V
Type of transistor: NPN / PNP
Polarisation: bipolar
Kind of transistor: BRT; complementary pair
Collector-emitter voltage: 50V
Collector current: 0.1A
Power dissipation: 0.385W
Case: SC70-6; SC88; SOT363
Mounting: SMD
Kind of package: reel; tape
Base resistor: 2.2kΩ
Base-emitter resistor: 2.2kΩ
Current gain: 8...15
Quantity in set/package: 3000pcs.
на замовлення 3000 шт:
термін постачання 21-30 дні (днів)
Кількість Ціна
15+31.06 грн
24+17.47 грн
100+9.86 грн
500+6.01 грн
1000+3.68 грн
3000+3.24 грн
Мінімальне замовлення: 15
В кошику  од. на суму  грн.
MUN5333DW1T1G dtc143zp-d.pdf
MUN5333DW1T1G
Виробник: ONSEMI
Category: Complementary transistors
Description: Transistor: NPN / PNP; bipolar; BRT,complementary pair; 50V; 0.1A
Type of transistor: NPN / PNP
Polarisation: bipolar
Kind of transistor: BRT; complementary pair
Collector-emitter voltage: 50V
Collector current: 0.1A
Power dissipation: 0.25W
Case: SC70-6; SC88; SOT363
Mounting: SMD
Kind of package: reel; tape
Base resistor: 4.7kΩ
Base-emitter resistor: 47kΩ
Current gain: 80...200
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MUN5332DW1T1G dtc143ep-d.pdf
Виробник: ONSEMI
Category: Complementary transistors
Description: Transistor: NPN / PNP; bipolar; BRT,complementary pair; 50V
Type of transistor: NPN / PNP
Polarisation: bipolar
Kind of transistor: BRT; complementary pair
Collector-emitter voltage: 50V
Collector current: 0.1A
Power dissipation: 0.385W
Case: SC70-6; SC88; SOT363
Mounting: SMD
Kind of package: reel; tape
Base resistor: 4.7kΩ
Base-emitter resistor: 4.7kΩ
Current gain: 15...30
Quantity in set/package: 3000pcs.
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MUN5330DW1T1G dtc113ep-d.pdf
Виробник: ONSEMI
Category: Complementary transistors
Description: Transistor: NPN / PNP; bipolar; BRT,complementary pair; 50V
Type of transistor: NPN / PNP
Polarisation: bipolar
Kind of transistor: BRT; complementary pair
Collector-emitter voltage: 50V
Collector current: 0.1A
Power dissipation: 0.385W
Case: SC70-6; SC88; SOT363
Mounting: SMD
Kind of package: reel; tape
Base resistor: 1kΩ
Base-emitter resistor: 1kΩ
Current gain: 3...5
Quantity in set/package: 3000pcs.
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MUN5334DW1T1G dtc124xp-d.pdf
Виробник: ONSEMI
Category: Complementary transistors
Description: Transistor: NPN / PNP; bipolar; BRT,complementary pair; 50V
Type of transistor: NPN / PNP
Polarisation: bipolar
Kind of transistor: BRT; complementary pair
Collector-emitter voltage: 50V
Collector current: 0.1A
Power dissipation: 0.385W
Case: SC70-6; SC88; SOT363
Mounting: SMD
Kind of package: reel; tape
Base resistor: 22kΩ
Base-emitter resistor: 47kΩ
Current gain: 80...150
Quantity in set/package: 3000pcs.
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MUN5335DW1T2G dtc123jp-d.pdf
Виробник: ONSEMI
Category: Complementary transistors
Description: Transistor: NPN / PNP; bipolar
Type of transistor: NPN / PNP
Polarisation: bipolar
Mounting: SMD
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MUN5338DW1T3G mun5338-d.pdf
Виробник: ONSEMI
Category: Complementary transistors
Description: Transistor: NPN / PNP; bipolar; BRT,complementary pair; 50V
Type of transistor: NPN / PNP
Polarisation: bipolar
Kind of transistor: BRT; complementary pair
Collector-emitter voltage: 50V
Collector current: 0.1A
Case: SC70-6; SC88; SOT363
Mounting: SMD
Kind of package: reel; tape
Base resistor: 4.7/47kΩ
Base-emitter resistor: 10/47kΩ
Quantity in set/package: 10000pcs.
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SMUN5330DW1T1G dtc113ep-d.pdf
SMUN5330DW1T1G
Виробник: ONSEMI
Category: Complementary transistors
Description: Transistor: NPN / PNP; bipolar; BRT,complementary pair; 50V; 0.1A
Type of transistor: NPN / PNP
Polarisation: bipolar
Kind of transistor: BRT; complementary pair
Collector-emitter voltage: 50V
Collector current: 0.1A
Power dissipation: 0.25W
Case: SC70-6; SC88; SOT363
Mounting: SMD
Kind of package: reel; tape
Base resistor: 1kΩ
Application: automotive industry
Base-emitter resistor: 1kΩ
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SMUN5335DW1T2G dtc123jp-d.pdf
SMUN5335DW1T2G
Виробник: ONSEMI
Category: Complementary transistors
Description: Transistor: NPN / PNP; bipolar; BRT,complementary pair; 50V; 0.1A
Type of transistor: NPN / PNP
Polarisation: bipolar
Kind of transistor: BRT; complementary pair
Collector-emitter voltage: 50V
Collector current: 0.1A
Power dissipation: 0.25W
Case: SC70-6; SC88; SOT363
Mounting: SMD
Kind of package: reel; tape
Base resistor: 2.2kΩ
Application: automotive industry
Base-emitter resistor: 47kΩ
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NSVMUN5331DW1T1G dtc123ep-d.pdf
Виробник: ONSEMI
Category: Complementary transistors
Description: Transistor: NPN / PNP; bipolar; BRT,complementary pair; 50V
Type of transistor: NPN / PNP
Polarisation: bipolar
Kind of transistor: BRT; complementary pair
Collector-emitter voltage: 50V
Collector current: 0.1A
Power dissipation: 0.385W
Case: SC70-6; SC88; SOT363
Mounting: SMD
Kind of package: reel; tape
Base resistor: 2.2kΩ
Application: automotive industry
Base-emitter resistor: 2.2kΩ
Current gain: 8...15
Quantity in set/package: 3000pcs.
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NSVMUN5332DW1T1G dtc143ep-d.pdf
Виробник: ONSEMI
Category: Complementary transistors
Description: Transistor: NPN / PNP; bipolar; BRT,complementary pair; 50V
Type of transistor: NPN / PNP
Polarisation: bipolar
Kind of transistor: BRT; complementary pair
Collector-emitter voltage: 50V
Collector current: 0.1A
Power dissipation: 0.385W
Case: SC70-6; SC88; SOT363
Mounting: SMD
Kind of package: reel; tape
Base resistor: 4.7kΩ
Application: automotive industry
Base-emitter resistor: 4.7kΩ
Current gain: 15...30
Quantity in set/package: 3000pcs.
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NSVMUN5333DW1T1G dtc143zp-d.pdf
Виробник: ONSEMI
Category: Complementary transistors
Description: Transistor: NPN / PNP; bipolar; BRT,complementary pair; 50V
Type of transistor: NPN / PNP
Polarisation: bipolar
Kind of transistor: BRT; complementary pair
Collector-emitter voltage: 50V
Collector current: 0.1A
Power dissipation: 0.385W
Case: SC70-6; SC88; SOT363
Mounting: SMD
Kind of package: reel; tape
Base resistor: 4.7kΩ
Application: automotive industry
Base-emitter resistor: 47kΩ
Current gain: 80...200
Quantity in set/package: 3000pcs.
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NSVMUN5334DW1T1G dtc124xp-d.pdf
Виробник: ONSEMI
Category: Complementary transistors
Description: Transistor: NPN / PNP; bipolar; BRT,complementary pair; 50V
Type of transistor: NPN / PNP
Polarisation: bipolar
Kind of transistor: BRT; complementary pair
Collector-emitter voltage: 50V
Collector current: 0.1A
Power dissipation: 0.385W
Case: SC70-6; SC88; SOT363
Mounting: SMD
Kind of package: reel; tape
Base resistor: 22kΩ
Application: automotive industry
Base-emitter resistor: 47kΩ
Current gain: 80...150
Quantity in set/package: 3000pcs.
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NSBC114YDP6T5G dtc114yd-d.pdf
Виробник: ONSEMI
Category: NPN SMD transistors
Description: Transistor: NPN x2; bipolar; BRT; 50V; 100mA; 408mW; SOT963; R1: 10kΩ
Type of transistor: NPN x2
Polarisation: bipolar
Kind of transistor: BRT
Collector-emitter voltage: 50V
Collector current: 0.1A
Power dissipation: 408mW
Case: SOT963
Current gain: 80...140
Mounting: SMD
Quantity in set/package: 8000pcs.
Kind of package: reel; tape
Base resistor: 10kΩ
Base-emitter resistor: 47kΩ
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NSBC114TDXV6T1G dtc114td-d.pdf
Виробник: ONSEMI
Category: NPN SMD transistors
Description: Transistor: NPN x2; bipolar; BRT; 50V; 100mA; 500mW; SOT563; 10kΩ
Type of transistor: NPN x2
Polarisation: bipolar
Kind of transistor: BRT
Collector-emitter voltage: 50V
Collector current: 0.1A
Power dissipation: 0.5W
Case: SOT563
Current gain: 160...350
Mounting: SMD
Quantity in set/package: 4000pcs.
Kind of package: reel; tape
Base resistor: 10kΩ
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NSBC114EDP6T5G dtc114ed-d.pdf
Виробник: ONSEMI
Category: NPN SMD transistors
Description: Transistor: NPN x2; bipolar; BRT; 50V; 100mA; 408mW; SOT963; R1: 10kΩ
Type of transistor: NPN x2
Polarisation: bipolar
Kind of transistor: BRT
Collector-emitter voltage: 50V
Collector current: 0.1A
Power dissipation: 408mW
Case: SOT963
Current gain: 35...60
Mounting: SMD
Quantity in set/package: 8000pcs.
Kind of package: reel; tape
Base resistor: 10kΩ
Base-emitter resistor: 10kΩ
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NSBC114EDXV6T1G dtc114ed-d.pdf
Виробник: ONSEMI
Category: NPN SMD transistors
Description: Transistor: NPN x2; bipolar; BRT; 50V; 100mA; 500mW; SOT563; R1: 10kΩ
Type of transistor: NPN x2
Polarisation: bipolar
Kind of transistor: BRT
Collector-emitter voltage: 50V
Collector current: 0.1A
Power dissipation: 0.5W
Case: SOT563
Current gain: 35...60
Mounting: SMD
Quantity in set/package: 4000pcs.
Kind of package: reel; tape
Base resistor: 10kΩ
Base-emitter resistor: 10kΩ
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NSBC114EF3T5G dtc114e-d.pdf
Виробник: ONSEMI
Category: NPN SMD transistors
Description: Transistor: NPN; bipolar; BRT; 50V; 100mA; 297mW; SOT1123; R1: 10kΩ
Type of transistor: NPN
Polarisation: bipolar
Kind of transistor: BRT
Collector-emitter voltage: 50V
Collector current: 0.1A
Power dissipation: 297mW
Case: SOT1123
Current gain: 35...60
Mounting: SMD
Quantity in set/package: 8000pcs.
Kind of package: reel; tape
Base resistor: 10kΩ
Base-emitter resistor: 10kΩ
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NSBC114EPDP6T5G dtc114ep-d.pdf
Виробник: ONSEMI
Category: Complementary transistors
Description: Transistor: NPN / PNP; bipolar; BRT,complementary pair; 50V
Type of transistor: NPN / PNP
Polarisation: bipolar
Kind of transistor: BRT; complementary pair
Collector-emitter voltage: 50V
Collector current: 0.1A
Power dissipation: 408mW
Case: SOT963
Current gain: 35...60
Mounting: SMD
Quantity in set/package: 8000pcs.
Kind of package: reel; tape
Base resistor: 10kΩ
Base-emitter resistor: 10kΩ
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NSBC114EPDXV6T1G dtc114ep-d.pdf
Виробник: ONSEMI
Category: Complementary transistors
Description: Transistor: NPN / PNP; bipolar; BRT,complementary pair; 50V
Type of transistor: NPN / PNP
Polarisation: bipolar
Kind of transistor: BRT; complementary pair
Collector-emitter voltage: 50V
Collector current: 0.1A
Power dissipation: 0.5W
Case: SOT563
Current gain: 35...60
Mounting: SMD
Quantity in set/package: 4000pcs.
Kind of package: reel; tape
Base resistor: 10kΩ
Base-emitter resistor: 10kΩ
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NSBC114TDP6T5G dtc114td-d.pdf
Виробник: ONSEMI
Category: NPN SMD transistors
Description: Transistor: NPN x2; bipolar; BRT; 50V; 100mA; 408mW; SOT963; 10kΩ
Type of transistor: NPN x2
Polarisation: bipolar
Kind of transistor: BRT
Collector-emitter voltage: 50V
Collector current: 0.1A
Power dissipation: 408mW
Case: SOT963
Current gain: 160...350
Mounting: SMD
Quantity in set/package: 8000pcs.
Kind of package: reel; tape
Base resistor: 10kΩ
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NSBC114TPDXV6T1G dtc114yp-d.pdf
Виробник: ONSEMI
Category: Complementary transistors
Description: Transistor: NPN / PNP; bipolar; BRT,complementary pair; 50V; 10kΩ
Type of transistor: NPN / PNP
Polarisation: bipolar
Kind of transistor: BRT; complementary pair
Collector-emitter voltage: 50V
Collector current: 0.1A
Power dissipation: 0.5W
Case: SOT563
Current gain: 160...350
Mounting: SMD
Quantity in set/package: 4000pcs.
Kind of package: reel; tape
Base resistor: 10kΩ
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NSBC114YDXV6T1G dtc114yd-d.pdf ONSM-S-A0004900022-1.pdf?t.download=true&u=5oefqw
Виробник: ONSEMI
Category: NPN SMD transistors
Description: Transistor: NPN x2; bipolar; BRT; 50V; 100mA; 500mW; SOT563; R1: 10kΩ
Type of transistor: NPN x2
Polarisation: bipolar
Kind of transistor: BRT
Collector-emitter voltage: 50V
Collector current: 0.1A
Power dissipation: 0.5W
Case: SOT563
Current gain: 80...140
Mounting: SMD
Quantity in set/package: 4000pcs.
Kind of package: reel; tape
Base resistor: 10kΩ
Base-emitter resistor: 47kΩ
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NSBC114YF3T5G dtc114y-d.pdf
Виробник: ONSEMI
Category: NPN SMD transistors
Description: Transistor: NPN; bipolar; BRT; 50V; 100mA; 297mW; SOT1123; R1: 10kΩ
Type of transistor: NPN
Polarisation: bipolar
Kind of transistor: BRT
Collector-emitter voltage: 50V
Collector current: 0.1A
Power dissipation: 297mW
Case: SOT1123
Current gain: 80...140
Mounting: SMD
Quantity in set/package: 8000pcs.
Kind of package: reel; tape
Base resistor: 10kΩ
Base-emitter resistor: 47kΩ
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NSBC114YPDP6T5G dtc114yp-d.pdf
Виробник: ONSEMI
Category: Complementary transistors
Description: Transistor: NPN / PNP; bipolar; BRT,complementary pair; 50V
Type of transistor: NPN / PNP
Polarisation: bipolar
Kind of transistor: BRT; complementary pair
Collector-emitter voltage: 50V
Collector current: 0.1A
Power dissipation: 408mW
Case: SOT963
Current gain: 80...140
Mounting: SMD
Quantity in set/package: 8000pcs.
Kind of package: reel; tape
Base resistor: 10kΩ
Base-emitter resistor: 47kΩ
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NSBC114YPDXV6T1G dtc114yp-d.pdf
Виробник: ONSEMI
Category: Complementary transistors
Description: Transistor: NPN / PNP; bipolar; BRT,complementary pair; 50V
Type of transistor: NPN / PNP
Polarisation: bipolar
Kind of transistor: BRT; complementary pair
Collector-emitter voltage: 50V
Collector current: 0.1A
Power dissipation: 0.5W
Case: SOT563
Current gain: 80...140
Mounting: SMD
Quantity in set/package: 4000pcs.
Kind of package: reel; tape
Base resistor: 10kΩ
Base-emitter resistor: 47kΩ
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NSVBC114EDXV6T1G dtc114ed-d.pdf
Виробник: ONSEMI
Category: NPN SMD transistors
Description: Transistor: NPN x2; bipolar; BRT; 50V; 100mA; 500mW; SOT563; R1: 10kΩ
Type of transistor: NPN x2
Polarisation: bipolar
Kind of transistor: BRT
Collector-emitter voltage: 50V
Collector current: 0.1A
Power dissipation: 0.5W
Case: SOT563
Current gain: 35...60
Mounting: SMD
Quantity in set/package: 4000pcs.
Kind of package: reel; tape
Base resistor: 10kΩ
Application: automotive industry
Base-emitter resistor: 10kΩ
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NSVBC114YDXV6T1G dtc114yd-d.pdf
Виробник: ONSEMI
Category: Complementary transistors
Description: Transistor: NPN / PNP; bipolar; BRT,complementary pair; 50V
Type of transistor: NPN / PNP
Polarisation: bipolar
Kind of transistor: BRT; complementary pair
Collector-emitter voltage: 50V
Collector current: 0.1A
Power dissipation: 0.5W
Case: SOT563
Current gain: 80...140
Mounting: SMD
Quantity in set/package: 4000pcs.
Kind of package: reel; tape
Base resistor: 10kΩ
Application: automotive industry
Base-emitter resistor: 47kΩ
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NSVBC114YPDXV6T1G dtc114yp-d.pdf
Виробник: ONSEMI
Category: Complementary transistors
Description: Transistor: NPN / PNP; bipolar; BRT,complementary pair; 50V
Type of transistor: NPN / PNP
Polarisation: bipolar
Kind of transistor: BRT; complementary pair
Collector-emitter voltage: 50V
Collector current: 0.1A
Power dissipation: 0.5W
Case: SOT563
Current gain: 80...140
Mounting: SMD
Quantity in set/package: 4000pcs.
Kind of package: reel; tape
Base resistor: 10kΩ
Application: automotive industry
Base-emitter resistor: 47kΩ
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NCV21872DMR2G ncs21871-d.pdf
NCV21872DMR2G
Виробник: ONSEMI
Category: SMD operational amplifiers
Description: IC: operational amplifier; 270kHz; Ch: 2; 1.8÷5.5VDC; Micro8
Type of integrated circuit: operational amplifier
Bandwidth: 270kHz
Number of channels: dual; 2
Mounting: SMT
Voltage supply range: 1.8...5.5V DC
Case: Micro8
Operating temperature: -40...125°C
Slew rate: 0.1V/μs
Integrated circuit features: rail-to-rail; zero-drift
Input offset voltage: 0.045mV
Kind of package: reel; tape
Input bias current: 0.4nA
Input offset current: 800pA
на замовлення 3000 шт:
термін постачання 21-30 дні (днів)
Кількість Ціна
6+76.31 грн
10+43.34 грн
25+37.82 грн
100+31.06 грн
250+27.27 грн
500+26.78 грн
Мінімальне замовлення: 6
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NCV333ASN2T1G ncs333-d.pdf
Виробник: ONSEMI
Category: SMD operational amplifiers
Description: IC: operational amplifier; 350kHz; Ch: 1; 1.8÷5.5VDC; SOT23-5
Type of integrated circuit: operational amplifier
Bandwidth: 350kHz
Number of channels: single; 1
Mounting: SMT
Voltage supply range: 1.8...5.5V DC
Case: SOT23-5
Operating temperature: -40...125°C
Slew rate: 0.15V/μs
Integrated circuit features: zero-drift
Input offset voltage: 30µV
Kind of package: reel; tape
Input bias current: 0.2nA
Input offset current: 400pA
на замовлення 2900 шт:
термін постачання 21-30 дні (днів)
Кількість Ціна
10+47.92 грн
14+31.31 грн
25+28.26 грн
50+26.70 грн
Мінімальне замовлення: 10
В кошику  од. на суму  грн.
NVMFWS1D5N08XT1G nvmfws1d5n08x-d.pdf
Виробник: ONSEMI
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 80V; 253A; Idm: 1071A; 194W; DFNW5
Type of transistor: N-MOSFET
Polarisation: unipolar
Mounting: SMD
Kind of package: reel; tape
Gate charge: 83nC
On-state resistance: 1.43mΩ
Gate-source voltage: ±20V
Drain-source voltage: 80V
Power dissipation: 194W
Drain current: 253A
Pulsed drain current: 1071A
Case: DFNW5
Kind of channel: enhancement
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NTMFWS1D5N08XT1G ntmfws1d5n08x-d.pdf
Виробник: ONSEMI
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 80V; 253A; Idm: 1071A; 194W; DFNW5
Type of transistor: N-MOSFET
Polarisation: unipolar
Mounting: SMD
Kind of package: reel; tape
Gate charge: 121nC
On-state resistance: 1.43mΩ
Gate-source voltage: ±20V
Drain-source voltage: 80V
Power dissipation: 194W
Drain current: 253A
Pulsed drain current: 1071A
Case: DFNW5
Kind of channel: enhancement
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NVMFWS1D9N08XT1G nvmfws1d9n08x-d.pdf
Виробник: ONSEMI
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 80V; 201A; Idm: 866A; 164W; DFNW5
Type of transistor: N-MOSFET
Polarisation: unipolar
Mounting: SMD
Kind of package: reel; tape
Gate charge: 63nC
On-state resistance: 1.9mΩ
Gate-source voltage: ±20V
Drain-source voltage: 80V
Power dissipation: 164W
Drain current: 201A
Pulsed drain current: 866A
Case: DFNW5
Kind of channel: enhancement
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NVMFWS2D1N08XT1G nvmfws2d1n08x-d.pdf
Виробник: ONSEMI
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 80V; 181A; Idm: 761A; 148W; DFNW5
Type of transistor: N-MOSFET
Polarisation: unipolar
Mounting: SMD
Kind of package: reel; tape
Gate charge: 53nC
On-state resistance: 2.1mΩ
Gate-source voltage: ±20V
Drain-source voltage: 80V
Power dissipation: 148W
Drain current: 181A
Pulsed drain current: 761A
Case: DFNW5
Kind of channel: enhancement
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NVMFWS2D5N08XT1G nvmfws2d5n08x-d.pdf
Виробник: ONSEMI
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 80V; 156A; Idm: 640A; 133W; DFNW5
Type of transistor: N-MOSFET
Polarisation: unipolar
Mounting: SMD
Kind of package: reel; tape
Gate charge: 45nC
On-state resistance: 2.55mΩ
Gate-source voltage: ±20V
Drain-source voltage: 80V
Power dissipation: 133W
Drain current: 156A
Pulsed drain current: 640A
Case: DFNW5
Kind of channel: enhancement
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NVMFWS4D5N08XT1G
Виробник: ONSEMI
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar
Type of transistor: N-MOSFET
Polarisation: unipolar
Mounting: SMD
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NVMFWS016N06CT1G nvmfs016n06c-d.pdf
Виробник: ONSEMI
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 60V; 33A; Idm: 226A; 18W; DFNW5
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 60V
Drain current: 33A
Pulsed drain current: 226A
Power dissipation: 18W
Case: DFNW5
Gate-source voltage: ±20V
On-state resistance: 15.6mΩ
Mounting: SMD
Gate charge: 6.9nC
Kind of package: reel; tape
Kind of channel: enhancement
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1N5401RLG 1N540x.PDF
1N5401RLG
Виробник: ONSEMI
Category: THT universal diodes
Description: Diode: rectifying; THT; 100V; 3A; reel,tape; Ifsm: 200A; DO27
Type of diode: rectifying
Mounting: THT
Max. off-state voltage: 100V
Load current: 3A
Semiconductor structure: single diode
Kind of package: reel; tape
Max. forward impulse current: 200A
Case: DO27
Max. forward voltage: 1V
Leakage current: 50µA
на замовлення 250 шт:
термін постачання 21-30 дні (днів)
Кількість Ціна
17+27.51 грн
34+12.28 грн
50+10.55 грн
100+10.22 грн
Мінімальне замовлення: 17
В кошику  од. на суму  грн.
1N5401G 1N540x.PDF
1N5401G
Виробник: ONSEMI
Category: THT universal diodes
Description: Diode: rectifying; THT; 100V; 3A; bulk; Ifsm: 200A; DO27; Ufmax: 1V
Type of diode: rectifying
Mounting: THT
Max. off-state voltage: 100V
Load current: 3A
Semiconductor structure: single diode
Kind of package: bulk
Max. forward impulse current: 200A
Case: DO27
Max. forward voltage: 1V
Leakage current: 50µA
на замовлення 454 шт:
термін постачання 21-30 дні (днів)
Кількість Ціна
19+23.96 грн
27+15.82 грн
100+11.04 грн
250+10.71 грн
Мінімальне замовлення: 19
В кошику  од. на суму  грн.
74LVTH245MTC 74LVTH245.pdf
74LVTH245MTC
Виробник: ONSEMI
Category: Buffers, transceivers, drivers
Description: IC: digital; bidirectional,transceiver; Ch: 8; BiCMOS; SMD; TSSOP20
Type of integrated circuit: digital
Kind of integrated circuit: bidirectional; transceiver
Number of channels: 8
Mounting: SMD
Case: TSSOP20
Operating temperature: -40...85°C
Kind of output: 3-state
Technology: BiCMOS
Kind of package: tube
Supply voltage: 2.7...3.6V DC
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BC847BM3T5G bc847bm3-d.pdf
BC847BM3T5G
Виробник: ONSEMI
Category: NPN SMD transistors
Description: Transistor: NPN; bipolar; 45V; 0.1A; 0.26W; SOT723
Type of transistor: NPN
Polarisation: bipolar
Collector-emitter voltage: 45V
Collector current: 0.1A
Power dissipation: 0.26W
Case: SOT723
Current gain: 200...450
Mounting: SMD
Kind of package: reel; tape
Frequency: 100MHz
на замовлення 8000 шт:
термін постачання 21-30 дні (днів)
Кількість Ціна
25+17.75 грн
31+13.68 грн
50+9.51 грн
100+7.81 грн
250+5.99 грн
500+4.94 грн
1000+4.17 грн
5000+3.09 грн
Мінімальне замовлення: 25
В кошику  од. на суму  грн.
FCB070N65S3 fcb070n65s3-d.pdf
FCB070N65S3
+1
Виробник: ONSEMI
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 650V; 44A; 312W; D2PAK
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 650V
Drain current: 44A
Power dissipation: 312W
Case: D2PAK
Gate-source voltage: ±30V
On-state resistance: 70mΩ
Mounting: SMD
Kind of package: reel; tape
Kind of channel: enhancement
на замовлення 640 шт:
термін постачання 21-30 дні (днів)
Кількість Ціна
2+424.15 грн
10+305.69 грн
25+297.45 грн
Мінімальне замовлення: 2
В кошику  од. на суму  грн.
NTBL070N65S3 ntbl070n65s3-d.pdf
Виробник: ONSEMI
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 650V; 44A; Idm: 110A; 312W; H-PSOF8L
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 650V
Drain current: 44A
Pulsed drain current: 110A
Power dissipation: 312W
Case: H-PSOF8L
Gate-source voltage: ±30V
On-state resistance: 70mΩ
Mounting: SMD
Gate charge: 82nC
Kind of package: reel; tape
Kind of channel: enhancement
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1N5363BG 1N53xx.PDF
1N5363BG
Виробник: ONSEMI
Category: THT Zener diodes
Description: Diode: Zener; 5W; 30V; bulk; CASE017AA; single diode; 0.5uA; 1N53xxB
Type of diode: Zener
Power dissipation: 5W
Zener voltage: 30V
Kind of package: bulk
Case: CASE017AA
Mounting: THT
Tolerance: ±5%
Semiconductor structure: single diode
Leakage current: 0.5µA
Manufacturer series: 1N53xxB
на замовлення 929 шт:
термін постачання 21-30 дні (днів)
Кількість Ціна
16+29.28 грн
18+23.73 грн
20+21.51 грн
100+14.91 грн
250+12.61 грн
500+12.36 грн
Мінімальне замовлення: 16
В кошику  од. на суму  грн.
1N5363BRLG description 1N53xx.PDF
Виробник: ONSEMI
Category: THT Zener diodes
Description: Diode: Zener; 5W; 30V; reel,tape; CASE017AA; single diode; 0.5uA
Type of diode: Zener
Power dissipation: 5W
Zener voltage: 30V
Kind of package: reel; tape
Case: CASE017AA
Mounting: THT
Tolerance: ±5%
Semiconductor structure: single diode
Leakage current: 0.5µA
Manufacturer series: 1N53xxB
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LM833DR2G LM833DR2G.PDF
LM833DR2G
Виробник: ONSEMI
Category: SMD operational amplifiers
Description: IC: operational amplifier; 15MHz; Ch: 2; ±5÷18VDC,10÷36VDC; SO8
Type of integrated circuit: operational amplifier
Bandwidth: 15MHz
Number of channels: dual; 2
Mounting: SMT
Voltage supply range: ± 5...18V DC; 10...36V DC
Case: SO8
Operating temperature: -40...85°C
Slew rate: 7V/μs
Input offset voltage: 0.3mV
Kind of package: reel; tape
Integrated circuit features: low noise
на замовлення 2956 шт:
термін постачання 21-30 дні (днів)
Кількість Ціна
22+20.41 грн
27+15.49 грн
30+13.76 грн
35+11.87 грн
100+9.81 грн
200+9.06 грн
250+8.90 грн
500+8.40 грн
1000+8.32 грн
Мінімальне замовлення: 22
В кошику  од. на суму  грн.
MC14584BDG MC14584BDG.PDF
MC14584BDG
Виробник: ONSEMI
Category: Gates, inverters
Description: IC: digital; NOT; Ch: 6; IN: 1; CMOS; SMD; SO14; 3÷18VDC; -55÷125°C
Supply voltage: 3...18V DC
Technology: CMOS
Type of integrated circuit: digital
Case: SO14
Family: HEF4000B
Number of channels: hex; 6
Kind of gate: NOT
Kind of package: tube
Mounting: SMD
Kind of input: with Schmitt trigger
Operating temperature: -55...125°C
Delay time: 100ns
Number of inputs: 1
на замовлення 10 шт:
термін постачання 21-30 дні (днів)
Кількість Ціна
10+41.20 грн
Мінімальне замовлення: 10
В кошику  од. на суму  грн.
MC14584BDTR2G MC14584B-D.pdf
MC14584BDTR2G
Виробник: ONSEMI
Category: Gates, inverters
Description: IC: digital; NOT; Ch: 6; IN: 1; CMOS; SMD; TSSOP14; 3÷18VDC; -55÷125°C
Supply voltage: 3...18V DC
Technology: CMOS
Type of integrated circuit: digital
Case: TSSOP14
Family: HEF4000B
Number of channels: hex; 6
Kind of gate: NOT
Kind of package: reel; tape
Mounting: SMD
Kind of input: with Schmitt trigger
Operating temperature: -55...125°C
Delay time: 100ns
Number of inputs: 1
на замовлення 2073 шт:
термін постачання 21-30 дні (днів)
Кількість Ціна
13+35.49 грн
18+23.90 грн
25+21.26 грн
100+19.03 грн
Мінімальне замовлення: 13
В кошику  од. на суму  грн.
FDMQ8205 FDMQ8205.pdf
Виробник: ONSEMI
Category: Integrated circuits - others
Description: IC: driver; single phase transistor bridge; ideal diode bridge
Mounting: SMD
Case: WDFN12
Kind of package: reel; tape
Type of integrated circuit: driver
Technology: GreenBridge™ 2
Kind of integrated circuit: ideal diode bridge
Topology: single phase transistor bridge
Operating temperature: -40...85°C
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SURA8205T3G-VF01 mura205t3-d.pdf
Виробник: ONSEMI
Category: SMD universal diodes
Description: Diode: rectifying; SMD; 50V; 2A; 30ns; SMA; Ufmax: 940mV; reel,tape
Type of diode: rectifying
Mounting: SMD
Max. off-state voltage: 50V
Load current: 2A
Reverse recovery time: 30ns
Semiconductor structure: single diode
Case: SMA
Max. forward voltage: 0.94V
Kind of package: reel; tape
Application: automotive industry
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ESD5B5.0ST5G esd5b5.0st1-d.pdf
Виробник: ONSEMI
Category: Bidirectional TVS SMD diodes
Description: Diode: TVS; 50W; 6.8V; bidirectional; SOD523; reel,tape; ESD
Type of diode: TVS
Max. off-state voltage: 5V
Breakdown voltage: 6.8V
Semiconductor structure: bidirectional
Case: SOD523
Mounting: SMD
Kind of package: reel; tape
Leakage current: 1µA
Version: ESD
Peak pulse power dissipation: 50W
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ESD5B5.0ST5G esd5b5.0st1-d.pdf
Виробник: ONSEMI
Category: Bidirectional TVS SMD diodes
Description: Diode: TVS; 50W; 5.8V; bidirectional; SOD523F
Type of diode: TVS
Max. off-state voltage: 5V
Breakdown voltage: 5.8V
Semiconductor structure: bidirectional
Case: SOD523F
Mounting: SMD
Leakage current: 1µA
Peak pulse power dissipation: 50W
на замовлення 8000 шт:
термін постачання 21-30 дні (днів)
Кількість Ціна
8000+3.09 грн
Мінімальне замовлення: 8000
В кошику  од. на суму  грн.
SBC856BLT3G BC856_7_8.PDF
SBC856BLT3G
Виробник: ONSEMI
Category: PNP SMD transistors
Description: Transistor: PNP; bipolar; 65V; 0.1A; 0.225/0.3W; SOT23,TO236AB
Type of transistor: PNP
Polarisation: bipolar
Collector-emitter voltage: 65V
Collector current: 0.1A
Power dissipation: 0.225/0.3W
Case: SOT23; TO236AB
Current gain: 220...475
Mounting: SMD
Kind of package: reel; tape
Frequency: 100MHz
Application: automotive industry
товару немає в наявності
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