| Фото | Назва | Виробник | Інформація |
Доступність |
Ціна |
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MUN5335DW1T1G | ONSEMI |
Category: Complementary transistorsDescription: Transistor: NPN / PNP; bipolar; BRT,complementary pair; 50V; 0.1A Type of transistor: NPN / PNP Polarisation: bipolar Kind of transistor: BRT; complementary pair Collector-emitter voltage: 50V Collector current: 0.1A Power dissipation: 0.187W Case: SC70-6; SC88; SOT363 Mounting: SMD Kind of package: reel; tape Base resistor: 2.2kΩ Base-emitter resistor: 47kΩ |
на замовлення 5745 шт: термін постачання 21-30 дні (днів) |
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MUN5331DW1T1G | ONSEMI |
Category: Complementary transistorsDescription: Transistor: NPN / PNP; bipolar; BRT,complementary pair; 50V Type of transistor: NPN / PNP Polarisation: bipolar Kind of transistor: BRT; complementary pair Collector-emitter voltage: 50V Collector current: 0.1A Power dissipation: 0.385W Case: SC70-6; SC88; SOT363 Mounting: SMD Kind of package: reel; tape Base resistor: 2.2kΩ Base-emitter resistor: 2.2kΩ Current gain: 8...15 Quantity in set/package: 3000pcs. |
на замовлення 3000 шт: термін постачання 21-30 дні (днів) |
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MUN5333DW1T1G | ONSEMI |
Category: Complementary transistorsDescription: Transistor: NPN / PNP; bipolar; BRT,complementary pair; 50V; 0.1A Type of transistor: NPN / PNP Polarisation: bipolar Kind of transistor: BRT; complementary pair Collector-emitter voltage: 50V Collector current: 0.1A Power dissipation: 0.25W Case: SC70-6; SC88; SOT363 Mounting: SMD Kind of package: reel; tape Base resistor: 4.7kΩ Base-emitter resistor: 47kΩ Current gain: 80...200 |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||||||||||||
| MUN5332DW1T1G | ONSEMI |
Category: Complementary transistorsDescription: Transistor: NPN / PNP; bipolar; BRT,complementary pair; 50V Type of transistor: NPN / PNP Polarisation: bipolar Kind of transistor: BRT; complementary pair Collector-emitter voltage: 50V Collector current: 0.1A Power dissipation: 0.385W Case: SC70-6; SC88; SOT363 Mounting: SMD Kind of package: reel; tape Base resistor: 4.7kΩ Base-emitter resistor: 4.7kΩ Current gain: 15...30 Quantity in set/package: 3000pcs. |
товару немає в наявності |
В кошику од. на суму грн. | |||||||||||||||||||
| MUN5330DW1T1G | ONSEMI |
Category: Complementary transistorsDescription: Transistor: NPN / PNP; bipolar; BRT,complementary pair; 50V Type of transistor: NPN / PNP Polarisation: bipolar Kind of transistor: BRT; complementary pair Collector-emitter voltage: 50V Collector current: 0.1A Power dissipation: 0.385W Case: SC70-6; SC88; SOT363 Mounting: SMD Kind of package: reel; tape Base resistor: 1kΩ Base-emitter resistor: 1kΩ Current gain: 3...5 Quantity in set/package: 3000pcs. |
товару немає в наявності |
В кошику од. на суму грн. | |||||||||||||||||||
| MUN5334DW1T1G | ONSEMI |
Category: Complementary transistorsDescription: Transistor: NPN / PNP; bipolar; BRT,complementary pair; 50V Type of transistor: NPN / PNP Polarisation: bipolar Kind of transistor: BRT; complementary pair Collector-emitter voltage: 50V Collector current: 0.1A Power dissipation: 0.385W Case: SC70-6; SC88; SOT363 Mounting: SMD Kind of package: reel; tape Base resistor: 22kΩ Base-emitter resistor: 47kΩ Current gain: 80...150 Quantity in set/package: 3000pcs. |
товару немає в наявності |
В кошику од. на суму грн. | |||||||||||||||||||
| MUN5335DW1T2G | ONSEMI |
Category: Complementary transistorsDescription: Transistor: NPN / PNP; bipolar Type of transistor: NPN / PNP Polarisation: bipolar Mounting: SMD |
товару немає в наявності |
В кошику од. на суму грн. | |||||||||||||||||||
| MUN5338DW1T3G | ONSEMI |
Category: Complementary transistorsDescription: Transistor: NPN / PNP; bipolar; BRT,complementary pair; 50V Type of transistor: NPN / PNP Polarisation: bipolar Kind of transistor: BRT; complementary pair Collector-emitter voltage: 50V Collector current: 0.1A Case: SC70-6; SC88; SOT363 Mounting: SMD Kind of package: reel; tape Base resistor: 4.7/47kΩ Base-emitter resistor: 10/47kΩ Quantity in set/package: 10000pcs. |
товару немає в наявності |
В кошику од. на суму грн. | |||||||||||||||||||
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SMUN5330DW1T1G | ONSEMI |
Category: Complementary transistorsDescription: Transistor: NPN / PNP; bipolar; BRT,complementary pair; 50V; 0.1A Type of transistor: NPN / PNP Polarisation: bipolar Kind of transistor: BRT; complementary pair Collector-emitter voltage: 50V Collector current: 0.1A Power dissipation: 0.25W Case: SC70-6; SC88; SOT363 Mounting: SMD Kind of package: reel; tape Base resistor: 1kΩ Application: automotive industry Base-emitter resistor: 1kΩ |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||||||||||||
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SMUN5335DW1T2G | ONSEMI |
Category: Complementary transistorsDescription: Transistor: NPN / PNP; bipolar; BRT,complementary pair; 50V; 0.1A Type of transistor: NPN / PNP Polarisation: bipolar Kind of transistor: BRT; complementary pair Collector-emitter voltage: 50V Collector current: 0.1A Power dissipation: 0.25W Case: SC70-6; SC88; SOT363 Mounting: SMD Kind of package: reel; tape Base resistor: 2.2kΩ Application: automotive industry Base-emitter resistor: 47kΩ |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||||||||||||
| NSVMUN5331DW1T1G | ONSEMI |
Category: Complementary transistorsDescription: Transistor: NPN / PNP; bipolar; BRT,complementary pair; 50V Type of transistor: NPN / PNP Polarisation: bipolar Kind of transistor: BRT; complementary pair Collector-emitter voltage: 50V Collector current: 0.1A Power dissipation: 0.385W Case: SC70-6; SC88; SOT363 Mounting: SMD Kind of package: reel; tape Base resistor: 2.2kΩ Application: automotive industry Base-emitter resistor: 2.2kΩ Current gain: 8...15 Quantity in set/package: 3000pcs. |
товару немає в наявності |
В кошику од. на суму грн. | |||||||||||||||||||
| NSVMUN5332DW1T1G | ONSEMI |
Category: Complementary transistorsDescription: Transistor: NPN / PNP; bipolar; BRT,complementary pair; 50V Type of transistor: NPN / PNP Polarisation: bipolar Kind of transistor: BRT; complementary pair Collector-emitter voltage: 50V Collector current: 0.1A Power dissipation: 0.385W Case: SC70-6; SC88; SOT363 Mounting: SMD Kind of package: reel; tape Base resistor: 4.7kΩ Application: automotive industry Base-emitter resistor: 4.7kΩ Current gain: 15...30 Quantity in set/package: 3000pcs. |
товару немає в наявності |
В кошику од. на суму грн. | |||||||||||||||||||
| NSVMUN5333DW1T1G | ONSEMI |
Category: Complementary transistorsDescription: Transistor: NPN / PNP; bipolar; BRT,complementary pair; 50V Type of transistor: NPN / PNP Polarisation: bipolar Kind of transistor: BRT; complementary pair Collector-emitter voltage: 50V Collector current: 0.1A Power dissipation: 0.385W Case: SC70-6; SC88; SOT363 Mounting: SMD Kind of package: reel; tape Base resistor: 4.7kΩ Application: automotive industry Base-emitter resistor: 47kΩ Current gain: 80...200 Quantity in set/package: 3000pcs. |
товару немає в наявності |
В кошику од. на суму грн. | |||||||||||||||||||
| NSVMUN5334DW1T1G | ONSEMI |
Category: Complementary transistorsDescription: Transistor: NPN / PNP; bipolar; BRT,complementary pair; 50V Type of transistor: NPN / PNP Polarisation: bipolar Kind of transistor: BRT; complementary pair Collector-emitter voltage: 50V Collector current: 0.1A Power dissipation: 0.385W Case: SC70-6; SC88; SOT363 Mounting: SMD Kind of package: reel; tape Base resistor: 22kΩ Application: automotive industry Base-emitter resistor: 47kΩ Current gain: 80...150 Quantity in set/package: 3000pcs. |
товару немає в наявності |
В кошику од. на суму грн. | |||||||||||||||||||
| NSBC114YDP6T5G | ONSEMI |
Category: NPN SMD transistorsDescription: Transistor: NPN x2; bipolar; BRT; 50V; 100mA; 408mW; SOT963; R1: 10kΩ Type of transistor: NPN x2 Polarisation: bipolar Kind of transistor: BRT Collector-emitter voltage: 50V Collector current: 0.1A Power dissipation: 408mW Case: SOT963 Current gain: 80...140 Mounting: SMD Quantity in set/package: 8000pcs. Kind of package: reel; tape Base resistor: 10kΩ Base-emitter resistor: 47kΩ |
товару немає в наявності |
В кошику од. на суму грн. | |||||||||||||||||||
| NSBC114TDXV6T1G | ONSEMI |
Category: NPN SMD transistorsDescription: Transistor: NPN x2; bipolar; BRT; 50V; 100mA; 500mW; SOT563; 10kΩ Type of transistor: NPN x2 Polarisation: bipolar Kind of transistor: BRT Collector-emitter voltage: 50V Collector current: 0.1A Power dissipation: 0.5W Case: SOT563 Current gain: 160...350 Mounting: SMD Quantity in set/package: 4000pcs. Kind of package: reel; tape Base resistor: 10kΩ |
товару немає в наявності |
В кошику од. на суму грн. | |||||||||||||||||||
| NSBC114EDP6T5G | ONSEMI |
Category: NPN SMD transistorsDescription: Transistor: NPN x2; bipolar; BRT; 50V; 100mA; 408mW; SOT963; R1: 10kΩ Type of transistor: NPN x2 Polarisation: bipolar Kind of transistor: BRT Collector-emitter voltage: 50V Collector current: 0.1A Power dissipation: 408mW Case: SOT963 Current gain: 35...60 Mounting: SMD Quantity in set/package: 8000pcs. Kind of package: reel; tape Base resistor: 10kΩ Base-emitter resistor: 10kΩ |
товару немає в наявності |
В кошику од. на суму грн. | |||||||||||||||||||
| NSBC114EDXV6T1G | ONSEMI |
Category: NPN SMD transistorsDescription: Transistor: NPN x2; bipolar; BRT; 50V; 100mA; 500mW; SOT563; R1: 10kΩ Type of transistor: NPN x2 Polarisation: bipolar Kind of transistor: BRT Collector-emitter voltage: 50V Collector current: 0.1A Power dissipation: 0.5W Case: SOT563 Current gain: 35...60 Mounting: SMD Quantity in set/package: 4000pcs. Kind of package: reel; tape Base resistor: 10kΩ Base-emitter resistor: 10kΩ |
товару немає в наявності |
В кошику од. на суму грн. | |||||||||||||||||||
| NSBC114EF3T5G | ONSEMI |
Category: NPN SMD transistorsDescription: Transistor: NPN; bipolar; BRT; 50V; 100mA; 297mW; SOT1123; R1: 10kΩ Type of transistor: NPN Polarisation: bipolar Kind of transistor: BRT Collector-emitter voltage: 50V Collector current: 0.1A Power dissipation: 297mW Case: SOT1123 Current gain: 35...60 Mounting: SMD Quantity in set/package: 8000pcs. Kind of package: reel; tape Base resistor: 10kΩ Base-emitter resistor: 10kΩ |
товару немає в наявності |
В кошику од. на суму грн. | |||||||||||||||||||
| NSBC114EPDP6T5G | ONSEMI |
Category: Complementary transistorsDescription: Transistor: NPN / PNP; bipolar; BRT,complementary pair; 50V Type of transistor: NPN / PNP Polarisation: bipolar Kind of transistor: BRT; complementary pair Collector-emitter voltage: 50V Collector current: 0.1A Power dissipation: 408mW Case: SOT963 Current gain: 35...60 Mounting: SMD Quantity in set/package: 8000pcs. Kind of package: reel; tape Base resistor: 10kΩ Base-emitter resistor: 10kΩ |
товару немає в наявності |
В кошику од. на суму грн. | |||||||||||||||||||
| NSBC114EPDXV6T1G | ONSEMI |
Category: Complementary transistorsDescription: Transistor: NPN / PNP; bipolar; BRT,complementary pair; 50V Type of transistor: NPN / PNP Polarisation: bipolar Kind of transistor: BRT; complementary pair Collector-emitter voltage: 50V Collector current: 0.1A Power dissipation: 0.5W Case: SOT563 Current gain: 35...60 Mounting: SMD Quantity in set/package: 4000pcs. Kind of package: reel; tape Base resistor: 10kΩ Base-emitter resistor: 10kΩ |
товару немає в наявності |
В кошику од. на суму грн. | |||||||||||||||||||
| NSBC114TDP6T5G | ONSEMI |
Category: NPN SMD transistorsDescription: Transistor: NPN x2; bipolar; BRT; 50V; 100mA; 408mW; SOT963; 10kΩ Type of transistor: NPN x2 Polarisation: bipolar Kind of transistor: BRT Collector-emitter voltage: 50V Collector current: 0.1A Power dissipation: 408mW Case: SOT963 Current gain: 160...350 Mounting: SMD Quantity in set/package: 8000pcs. Kind of package: reel; tape Base resistor: 10kΩ |
товару немає в наявності |
В кошику од. на суму грн. | |||||||||||||||||||
| NSBC114TPDXV6T1G | ONSEMI |
Category: Complementary transistorsDescription: Transistor: NPN / PNP; bipolar; BRT,complementary pair; 50V; 10kΩ Type of transistor: NPN / PNP Polarisation: bipolar Kind of transistor: BRT; complementary pair Collector-emitter voltage: 50V Collector current: 0.1A Power dissipation: 0.5W Case: SOT563 Current gain: 160...350 Mounting: SMD Quantity in set/package: 4000pcs. Kind of package: reel; tape Base resistor: 10kΩ |
товару немає в наявності |
В кошику од. на суму грн. | |||||||||||||||||||
| NSBC114YDXV6T1G | ONSEMI |
Category: NPN SMD transistorsDescription: Transistor: NPN x2; bipolar; BRT; 50V; 100mA; 500mW; SOT563; R1: 10kΩ Type of transistor: NPN x2 Polarisation: bipolar Kind of transistor: BRT Collector-emitter voltage: 50V Collector current: 0.1A Power dissipation: 0.5W Case: SOT563 Current gain: 80...140 Mounting: SMD Quantity in set/package: 4000pcs. Kind of package: reel; tape Base resistor: 10kΩ Base-emitter resistor: 47kΩ |
товару немає в наявності |
В кошику од. на суму грн. | |||||||||||||||||||
| NSBC114YF3T5G | ONSEMI |
Category: NPN SMD transistorsDescription: Transistor: NPN; bipolar; BRT; 50V; 100mA; 297mW; SOT1123; R1: 10kΩ Type of transistor: NPN Polarisation: bipolar Kind of transistor: BRT Collector-emitter voltage: 50V Collector current: 0.1A Power dissipation: 297mW Case: SOT1123 Current gain: 80...140 Mounting: SMD Quantity in set/package: 8000pcs. Kind of package: reel; tape Base resistor: 10kΩ Base-emitter resistor: 47kΩ |
товару немає в наявності |
В кошику од. на суму грн. | |||||||||||||||||||
| NSBC114YPDP6T5G | ONSEMI |
Category: Complementary transistorsDescription: Transistor: NPN / PNP; bipolar; BRT,complementary pair; 50V Type of transistor: NPN / PNP Polarisation: bipolar Kind of transistor: BRT; complementary pair Collector-emitter voltage: 50V Collector current: 0.1A Power dissipation: 408mW Case: SOT963 Current gain: 80...140 Mounting: SMD Quantity in set/package: 8000pcs. Kind of package: reel; tape Base resistor: 10kΩ Base-emitter resistor: 47kΩ |
товару немає в наявності |
В кошику од. на суму грн. | |||||||||||||||||||
| NSBC114YPDXV6T1G | ONSEMI |
Category: Complementary transistorsDescription: Transistor: NPN / PNP; bipolar; BRT,complementary pair; 50V Type of transistor: NPN / PNP Polarisation: bipolar Kind of transistor: BRT; complementary pair Collector-emitter voltage: 50V Collector current: 0.1A Power dissipation: 0.5W Case: SOT563 Current gain: 80...140 Mounting: SMD Quantity in set/package: 4000pcs. Kind of package: reel; tape Base resistor: 10kΩ Base-emitter resistor: 47kΩ |
товару немає в наявності |
В кошику од. на суму грн. | |||||||||||||||||||
| NSVBC114EDXV6T1G | ONSEMI |
Category: NPN SMD transistorsDescription: Transistor: NPN x2; bipolar; BRT; 50V; 100mA; 500mW; SOT563; R1: 10kΩ Type of transistor: NPN x2 Polarisation: bipolar Kind of transistor: BRT Collector-emitter voltage: 50V Collector current: 0.1A Power dissipation: 0.5W Case: SOT563 Current gain: 35...60 Mounting: SMD Quantity in set/package: 4000pcs. Kind of package: reel; tape Base resistor: 10kΩ Application: automotive industry Base-emitter resistor: 10kΩ |
товару немає в наявності |
В кошику од. на суму грн. | |||||||||||||||||||
| NSVBC114YDXV6T1G | ONSEMI |
Category: Complementary transistorsDescription: Transistor: NPN / PNP; bipolar; BRT,complementary pair; 50V Type of transistor: NPN / PNP Polarisation: bipolar Kind of transistor: BRT; complementary pair Collector-emitter voltage: 50V Collector current: 0.1A Power dissipation: 0.5W Case: SOT563 Current gain: 80...140 Mounting: SMD Quantity in set/package: 4000pcs. Kind of package: reel; tape Base resistor: 10kΩ Application: automotive industry Base-emitter resistor: 47kΩ |
товару немає в наявності |
В кошику од. на суму грн. | |||||||||||||||||||
| NSVBC114YPDXV6T1G | ONSEMI |
Category: Complementary transistorsDescription: Transistor: NPN / PNP; bipolar; BRT,complementary pair; 50V Type of transistor: NPN / PNP Polarisation: bipolar Kind of transistor: BRT; complementary pair Collector-emitter voltage: 50V Collector current: 0.1A Power dissipation: 0.5W Case: SOT563 Current gain: 80...140 Mounting: SMD Quantity in set/package: 4000pcs. Kind of package: reel; tape Base resistor: 10kΩ Application: automotive industry Base-emitter resistor: 47kΩ |
товару немає в наявності |
В кошику од. на суму грн. | |||||||||||||||||||
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NCV21872DMR2G | ONSEMI |
Category: SMD operational amplifiersDescription: IC: operational amplifier; 270kHz; Ch: 2; 1.8÷5.5VDC; Micro8 Type of integrated circuit: operational amplifier Bandwidth: 270kHz Number of channels: dual; 2 Mounting: SMT Voltage supply range: 1.8...5.5V DC Case: Micro8 Operating temperature: -40...125°C Slew rate: 0.1V/μs Integrated circuit features: rail-to-rail; zero-drift Input offset voltage: 0.045mV Kind of package: reel; tape Input bias current: 0.4nA Input offset current: 800pA |
на замовлення 3000 шт: термін постачання 21-30 дні (днів) |
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| NCV333ASN2T1G | ONSEMI |
Category: SMD operational amplifiersDescription: IC: operational amplifier; 350kHz; Ch: 1; 1.8÷5.5VDC; SOT23-5 Type of integrated circuit: operational amplifier Bandwidth: 350kHz Number of channels: single; 1 Mounting: SMT Voltage supply range: 1.8...5.5V DC Case: SOT23-5 Operating temperature: -40...125°C Slew rate: 0.15V/μs Integrated circuit features: zero-drift Input offset voltage: 30µV Kind of package: reel; tape Input bias current: 0.2nA Input offset current: 400pA |
на замовлення 2900 шт: термін постачання 21-30 дні (днів) |
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| NVMFWS1D5N08XT1G | ONSEMI |
Category: SMD N channel transistorsDescription: Transistor: N-MOSFET; unipolar; 80V; 253A; Idm: 1071A; 194W; DFNW5 Type of transistor: N-MOSFET Polarisation: unipolar Mounting: SMD Kind of package: reel; tape Gate charge: 83nC On-state resistance: 1.43mΩ Gate-source voltage: ±20V Drain-source voltage: 80V Power dissipation: 194W Drain current: 253A Pulsed drain current: 1071A Case: DFNW5 Kind of channel: enhancement |
товару немає в наявності |
В кошику од. на суму грн. | |||||||||||||||||||
| NTMFWS1D5N08XT1G | ONSEMI |
Category: SMD N channel transistorsDescription: Transistor: N-MOSFET; unipolar; 80V; 253A; Idm: 1071A; 194W; DFNW5 Type of transistor: N-MOSFET Polarisation: unipolar Mounting: SMD Kind of package: reel; tape Gate charge: 121nC On-state resistance: 1.43mΩ Gate-source voltage: ±20V Drain-source voltage: 80V Power dissipation: 194W Drain current: 253A Pulsed drain current: 1071A Case: DFNW5 Kind of channel: enhancement |
товару немає в наявності |
В кошику од. на суму грн. | |||||||||||||||||||
| NVMFWS1D9N08XT1G | ONSEMI |
Category: SMD N channel transistorsDescription: Transistor: N-MOSFET; unipolar; 80V; 201A; Idm: 866A; 164W; DFNW5 Type of transistor: N-MOSFET Polarisation: unipolar Mounting: SMD Kind of package: reel; tape Gate charge: 63nC On-state resistance: 1.9mΩ Gate-source voltage: ±20V Drain-source voltage: 80V Power dissipation: 164W Drain current: 201A Pulsed drain current: 866A Case: DFNW5 Kind of channel: enhancement |
товару немає в наявності |
В кошику од. на суму грн. | |||||||||||||||||||
| NVMFWS2D1N08XT1G | ONSEMI |
Category: SMD N channel transistorsDescription: Transistor: N-MOSFET; unipolar; 80V; 181A; Idm: 761A; 148W; DFNW5 Type of transistor: N-MOSFET Polarisation: unipolar Mounting: SMD Kind of package: reel; tape Gate charge: 53nC On-state resistance: 2.1mΩ Gate-source voltage: ±20V Drain-source voltage: 80V Power dissipation: 148W Drain current: 181A Pulsed drain current: 761A Case: DFNW5 Kind of channel: enhancement |
товару немає в наявності |
В кошику од. на суму грн. | |||||||||||||||||||
| NVMFWS2D5N08XT1G | ONSEMI |
Category: SMD N channel transistorsDescription: Transistor: N-MOSFET; unipolar; 80V; 156A; Idm: 640A; 133W; DFNW5 Type of transistor: N-MOSFET Polarisation: unipolar Mounting: SMD Kind of package: reel; tape Gate charge: 45nC On-state resistance: 2.55mΩ Gate-source voltage: ±20V Drain-source voltage: 80V Power dissipation: 133W Drain current: 156A Pulsed drain current: 640A Case: DFNW5 Kind of channel: enhancement |
товару немає в наявності |
В кошику од. на суму грн. | |||||||||||||||||||
| NVMFWS4D5N08XT1G | ONSEMI |
Category: SMD N channel transistors Description: Transistor: N-MOSFET; unipolar Type of transistor: N-MOSFET Polarisation: unipolar Mounting: SMD |
товару немає в наявності |
В кошику од. на суму грн. | |||||||||||||||||||
| NVMFWS016N06CT1G | ONSEMI |
Category: SMD N channel transistorsDescription: Transistor: N-MOSFET; unipolar; 60V; 33A; Idm: 226A; 18W; DFNW5 Type of transistor: N-MOSFET Polarisation: unipolar Drain-source voltage: 60V Drain current: 33A Pulsed drain current: 226A Power dissipation: 18W Case: DFNW5 Gate-source voltage: ±20V On-state resistance: 15.6mΩ Mounting: SMD Gate charge: 6.9nC Kind of package: reel; tape Kind of channel: enhancement |
товару немає в наявності |
В кошику од. на суму грн. | |||||||||||||||||||
|
1N5401RLG | ONSEMI |
Category: THT universal diodesDescription: Diode: rectifying; THT; 100V; 3A; reel,tape; Ifsm: 200A; DO27 Type of diode: rectifying Mounting: THT Max. off-state voltage: 100V Load current: 3A Semiconductor structure: single diode Kind of package: reel; tape Max. forward impulse current: 200A Case: DO27 Max. forward voltage: 1V Leakage current: 50µA |
на замовлення 250 шт: термін постачання 21-30 дні (днів) |
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1N5401G | ONSEMI |
Category: THT universal diodesDescription: Diode: rectifying; THT; 100V; 3A; bulk; Ifsm: 200A; DO27; Ufmax: 1V Type of diode: rectifying Mounting: THT Max. off-state voltage: 100V Load current: 3A Semiconductor structure: single diode Kind of package: bulk Max. forward impulse current: 200A Case: DO27 Max. forward voltage: 1V Leakage current: 50µA |
на замовлення 454 шт: термін постачання 21-30 дні (днів) |
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74LVTH245MTC | ONSEMI |
Category: Buffers, transceivers, driversDescription: IC: digital; bidirectional,transceiver; Ch: 8; BiCMOS; SMD; TSSOP20 Type of integrated circuit: digital Kind of integrated circuit: bidirectional; transceiver Number of channels: 8 Mounting: SMD Case: TSSOP20 Operating temperature: -40...85°C Kind of output: 3-state Technology: BiCMOS Kind of package: tube Supply voltage: 2.7...3.6V DC |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||||||||||||
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BC847BM3T5G | ONSEMI |
Category: NPN SMD transistorsDescription: Transistor: NPN; bipolar; 45V; 0.1A; 0.26W; SOT723 Type of transistor: NPN Polarisation: bipolar Collector-emitter voltage: 45V Collector current: 0.1A Power dissipation: 0.26W Case: SOT723 Current gain: 200...450 Mounting: SMD Kind of package: reel; tape Frequency: 100MHz |
на замовлення 8000 шт: термін постачання 21-30 дні (днів) |
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FCB070N65S3 | ONSEMI |
Category: SMD N channel transistorsDescription: Transistor: N-MOSFET; unipolar; 650V; 44A; 312W; D2PAK Type of transistor: N-MOSFET Polarisation: unipolar Drain-source voltage: 650V Drain current: 44A Power dissipation: 312W Case: D2PAK Gate-source voltage: ±30V On-state resistance: 70mΩ Mounting: SMD Kind of package: reel; tape Kind of channel: enhancement |
на замовлення 640 шт: термін постачання 21-30 дні (днів) |
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| NTBL070N65S3 | ONSEMI |
Category: SMD N channel transistorsDescription: Transistor: N-MOSFET; unipolar; 650V; 44A; Idm: 110A; 312W; H-PSOF8L Type of transistor: N-MOSFET Polarisation: unipolar Drain-source voltage: 650V Drain current: 44A Pulsed drain current: 110A Power dissipation: 312W Case: H-PSOF8L Gate-source voltage: ±30V On-state resistance: 70mΩ Mounting: SMD Gate charge: 82nC Kind of package: reel; tape Kind of channel: enhancement |
товару немає в наявності |
В кошику од. на суму грн. | |||||||||||||||||||
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1N5363BG | ONSEMI |
Category: THT Zener diodesDescription: Diode: Zener; 5W; 30V; bulk; CASE017AA; single diode; 0.5uA; 1N53xxB Type of diode: Zener Power dissipation: 5W Zener voltage: 30V Kind of package: bulk Case: CASE017AA Mounting: THT Tolerance: ±5% Semiconductor structure: single diode Leakage current: 0.5µA Manufacturer series: 1N53xxB |
на замовлення 929 шт: термін постачання 21-30 дні (днів) |
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| 1N5363BRLG | ONSEMI |
Category: THT Zener diodesDescription: Diode: Zener; 5W; 30V; reel,tape; CASE017AA; single diode; 0.5uA Type of diode: Zener Power dissipation: 5W Zener voltage: 30V Kind of package: reel; tape Case: CASE017AA Mounting: THT Tolerance: ±5% Semiconductor structure: single diode Leakage current: 0.5µA Manufacturer series: 1N53xxB |
товару немає в наявності |
В кошику од. на суму грн. | |||||||||||||||||||
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LM833DR2G | ONSEMI |
Category: SMD operational amplifiersDescription: IC: operational amplifier; 15MHz; Ch: 2; ±5÷18VDC,10÷36VDC; SO8 Type of integrated circuit: operational amplifier Bandwidth: 15MHz Number of channels: dual; 2 Mounting: SMT Voltage supply range: ± 5...18V DC; 10...36V DC Case: SO8 Operating temperature: -40...85°C Slew rate: 7V/μs Input offset voltage: 0.3mV Kind of package: reel; tape Integrated circuit features: low noise |
на замовлення 2956 шт: термін постачання 21-30 дні (днів) |
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MC14584BDG | ONSEMI |
Category: Gates, invertersDescription: IC: digital; NOT; Ch: 6; IN: 1; CMOS; SMD; SO14; 3÷18VDC; -55÷125°C Supply voltage: 3...18V DC Technology: CMOS Type of integrated circuit: digital Case: SO14 Family: HEF4000B Number of channels: hex; 6 Kind of gate: NOT Kind of package: tube Mounting: SMD Kind of input: with Schmitt trigger Operating temperature: -55...125°C Delay time: 100ns Number of inputs: 1 |
на замовлення 10 шт: термін постачання 21-30 дні (днів) |
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MC14584BDTR2G | ONSEMI |
Category: Gates, invertersDescription: IC: digital; NOT; Ch: 6; IN: 1; CMOS; SMD; TSSOP14; 3÷18VDC; -55÷125°C Supply voltage: 3...18V DC Technology: CMOS Type of integrated circuit: digital Case: TSSOP14 Family: HEF4000B Number of channels: hex; 6 Kind of gate: NOT Kind of package: reel; tape Mounting: SMD Kind of input: with Schmitt trigger Operating temperature: -55...125°C Delay time: 100ns Number of inputs: 1 |
на замовлення 2073 шт: термін постачання 21-30 дні (днів) |
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| FDMQ8205 | ONSEMI |
Category: Integrated circuits - othersDescription: IC: driver; single phase transistor bridge; ideal diode bridge Mounting: SMD Case: WDFN12 Kind of package: reel; tape Type of integrated circuit: driver Technology: GreenBridge™ 2 Kind of integrated circuit: ideal diode bridge Topology: single phase transistor bridge Operating temperature: -40...85°C |
товару немає в наявності |
В кошику од. на суму грн. | |||||||||||||||||||
| SURA8205T3G-VF01 | ONSEMI |
Category: SMD universal diodesDescription: Diode: rectifying; SMD; 50V; 2A; 30ns; SMA; Ufmax: 940mV; reel,tape Type of diode: rectifying Mounting: SMD Max. off-state voltage: 50V Load current: 2A Reverse recovery time: 30ns Semiconductor structure: single diode Case: SMA Max. forward voltage: 0.94V Kind of package: reel; tape Application: automotive industry |
товару немає в наявності |
В кошику од. на суму грн. | |||||||||||||||||||
| ESD5B5.0ST5G | ONSEMI |
Category: Bidirectional TVS SMD diodesDescription: Diode: TVS; 50W; 6.8V; bidirectional; SOD523; reel,tape; ESD Type of diode: TVS Max. off-state voltage: 5V Breakdown voltage: 6.8V Semiconductor structure: bidirectional Case: SOD523 Mounting: SMD Kind of package: reel; tape Leakage current: 1µA Version: ESD Peak pulse power dissipation: 50W |
товару немає в наявності |
В кошику од. на суму грн. | |||||||||||||||||||
| ESD5B5.0ST5G | ONSEMI |
Category: Bidirectional TVS SMD diodesDescription: Diode: TVS; 50W; 5.8V; bidirectional; SOD523F Type of diode: TVS Max. off-state voltage: 5V Breakdown voltage: 5.8V Semiconductor structure: bidirectional Case: SOD523F Mounting: SMD Leakage current: 1µA Peak pulse power dissipation: 50W |
на замовлення 8000 шт: термін постачання 21-30 дні (днів) |
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SBC856BLT3G | ONSEMI |
Category: PNP SMD transistorsDescription: Transistor: PNP; bipolar; 65V; 0.1A; 0.225/0.3W; SOT23,TO236AB Type of transistor: PNP Polarisation: bipolar Collector-emitter voltage: 65V Collector current: 0.1A Power dissipation: 0.225/0.3W Case: SOT23; TO236AB Current gain: 220...475 Mounting: SMD Kind of package: reel; tape Frequency: 100MHz Application: automotive industry |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||||||||||||
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MMSZ15T1G | ONSEMI |
Category: SMD Zener diodesDescription: Diode: Zener; 0.5W; 15V; SMD; reel,tape; SOD123; single diode Type of diode: Zener Power dissipation: 0.5W Zener voltage: 15V Kind of package: reel; tape Case: SOD123 Mounting: SMD Tolerance: ±5% Semiconductor structure: single diode Manufacturer series: MMSZxxTxG |
на замовлення 6160 шт: термін постачання 21-30 дні (днів) |
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MMSZ5245BT1G | ONSEMI |
Category: SMD Zener diodesDescription: Diode: Zener; 0.5W; 15V; SMD; reel,tape; SOD123; single diode Type of diode: Zener Power dissipation: 0.5W Zener voltage: 15V Kind of package: reel; tape Case: SOD123 Mounting: SMD Tolerance: ±5% Semiconductor structure: single diode Manufacturer series: MMSZ52xxB |
на замовлення 254 шт: термін постачання 21-30 дні (днів) |
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MM3Z15VST1G | ONSEMI |
Category: SMD Zener diodesDescription: Diode: Zener; 0.5W; 15V; SMD; reel,tape; SOD323; single diode Type of diode: Zener Power dissipation: 0.5W Zener voltage: 15V Kind of package: reel; tape Case: SOD323 Mounting: SMD Tolerance: ±2% Semiconductor structure: single diode Manufacturer series: MM3ZxxST1G |
на замовлення 493 шт: термін постачання 21-30 дні (днів) |
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BZX79C15 | ONSEMI |
Category: THT Zener diodesDescription: Diode: Zener; 0.5W; 15V; bulk; CASE017AG; single diode; 0.05uA Type of diode: Zener Power dissipation: 0.5W Zener voltage: 15V Kind of package: bulk Case: CASE017AG Mounting: THT Tolerance: ±5% Semiconductor structure: single diode Manufacturer series: BZX79C Leakage current: 50nA |
на замовлення 840 шт: термін постачання 21-30 дні (днів) |
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| MURF1620CTG | ONSEMI |
Category: THT universal diodesDescription: Diode: rectifying; THT; 200V; 16A; tube; Ifsm: 100A; TO220FP; 25ns Mounting: THT Reverse recovery time: 25ns Load current: 16A Max. off-state voltage: 200V Max. forward impulse current: 100A Semiconductor structure: common cathode; double Case: TO220FP Type of diode: rectifying Kind of package: tube |
на замовлення 99 шт: термін постачання 21-30 дні (днів) |
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| MUN5335DW1T1G |
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Виробник: ONSEMI
Category: Complementary transistors
Description: Transistor: NPN / PNP; bipolar; BRT,complementary pair; 50V; 0.1A
Type of transistor: NPN / PNP
Polarisation: bipolar
Kind of transistor: BRT; complementary pair
Collector-emitter voltage: 50V
Collector current: 0.1A
Power dissipation: 0.187W
Case: SC70-6; SC88; SOT363
Mounting: SMD
Kind of package: reel; tape
Base resistor: 2.2kΩ
Base-emitter resistor: 47kΩ
Category: Complementary transistors
Description: Transistor: NPN / PNP; bipolar; BRT,complementary pair; 50V; 0.1A
Type of transistor: NPN / PNP
Polarisation: bipolar
Kind of transistor: BRT; complementary pair
Collector-emitter voltage: 50V
Collector current: 0.1A
Power dissipation: 0.187W
Case: SC70-6; SC88; SOT363
Mounting: SMD
Kind of package: reel; tape
Base resistor: 2.2kΩ
Base-emitter resistor: 47kΩ
на замовлення 5745 шт:
термін постачання 21-30 дні (днів)| Кількість | Ціна |
|---|---|
| 28+ | 15.97 грн |
| 46+ | 8.98 грн |
| 65+ | 6.41 грн |
| 100+ | 5.58 грн |
| 500+ | 4.10 грн |
| 1000+ | 3.63 грн |
| 1500+ | 3.39 грн |
| 3000+ | 3.02 грн |
| MUN5331DW1T1G |
![]() |
Виробник: ONSEMI
Category: Complementary transistors
Description: Transistor: NPN / PNP; bipolar; BRT,complementary pair; 50V
Type of transistor: NPN / PNP
Polarisation: bipolar
Kind of transistor: BRT; complementary pair
Collector-emitter voltage: 50V
Collector current: 0.1A
Power dissipation: 0.385W
Case: SC70-6; SC88; SOT363
Mounting: SMD
Kind of package: reel; tape
Base resistor: 2.2kΩ
Base-emitter resistor: 2.2kΩ
Current gain: 8...15
Quantity in set/package: 3000pcs.
Category: Complementary transistors
Description: Transistor: NPN / PNP; bipolar; BRT,complementary pair; 50V
Type of transistor: NPN / PNP
Polarisation: bipolar
Kind of transistor: BRT; complementary pair
Collector-emitter voltage: 50V
Collector current: 0.1A
Power dissipation: 0.385W
Case: SC70-6; SC88; SOT363
Mounting: SMD
Kind of package: reel; tape
Base resistor: 2.2kΩ
Base-emitter resistor: 2.2kΩ
Current gain: 8...15
Quantity in set/package: 3000pcs.
на замовлення 3000 шт:
термін постачання 21-30 дні (днів)| Кількість | Ціна |
|---|---|
| 15+ | 31.06 грн |
| 24+ | 17.47 грн |
| 100+ | 9.86 грн |
| 500+ | 6.01 грн |
| 1000+ | 3.68 грн |
| 3000+ | 3.24 грн |
| MUN5333DW1T1G |
![]() |
Виробник: ONSEMI
Category: Complementary transistors
Description: Transistor: NPN / PNP; bipolar; BRT,complementary pair; 50V; 0.1A
Type of transistor: NPN / PNP
Polarisation: bipolar
Kind of transistor: BRT; complementary pair
Collector-emitter voltage: 50V
Collector current: 0.1A
Power dissipation: 0.25W
Case: SC70-6; SC88; SOT363
Mounting: SMD
Kind of package: reel; tape
Base resistor: 4.7kΩ
Base-emitter resistor: 47kΩ
Current gain: 80...200
Category: Complementary transistors
Description: Transistor: NPN / PNP; bipolar; BRT,complementary pair; 50V; 0.1A
Type of transistor: NPN / PNP
Polarisation: bipolar
Kind of transistor: BRT; complementary pair
Collector-emitter voltage: 50V
Collector current: 0.1A
Power dissipation: 0.25W
Case: SC70-6; SC88; SOT363
Mounting: SMD
Kind of package: reel; tape
Base resistor: 4.7kΩ
Base-emitter resistor: 47kΩ
Current gain: 80...200
товару немає в наявності
В кошику
од. на суму грн.
| MUN5332DW1T1G |
![]() |
Виробник: ONSEMI
Category: Complementary transistors
Description: Transistor: NPN / PNP; bipolar; BRT,complementary pair; 50V
Type of transistor: NPN / PNP
Polarisation: bipolar
Kind of transistor: BRT; complementary pair
Collector-emitter voltage: 50V
Collector current: 0.1A
Power dissipation: 0.385W
Case: SC70-6; SC88; SOT363
Mounting: SMD
Kind of package: reel; tape
Base resistor: 4.7kΩ
Base-emitter resistor: 4.7kΩ
Current gain: 15...30
Quantity in set/package: 3000pcs.
Category: Complementary transistors
Description: Transistor: NPN / PNP; bipolar; BRT,complementary pair; 50V
Type of transistor: NPN / PNP
Polarisation: bipolar
Kind of transistor: BRT; complementary pair
Collector-emitter voltage: 50V
Collector current: 0.1A
Power dissipation: 0.385W
Case: SC70-6; SC88; SOT363
Mounting: SMD
Kind of package: reel; tape
Base resistor: 4.7kΩ
Base-emitter resistor: 4.7kΩ
Current gain: 15...30
Quantity in set/package: 3000pcs.
товару немає в наявності
В кошику
од. на суму грн.
| MUN5330DW1T1G |
![]() |
Виробник: ONSEMI
Category: Complementary transistors
Description: Transistor: NPN / PNP; bipolar; BRT,complementary pair; 50V
Type of transistor: NPN / PNP
Polarisation: bipolar
Kind of transistor: BRT; complementary pair
Collector-emitter voltage: 50V
Collector current: 0.1A
Power dissipation: 0.385W
Case: SC70-6; SC88; SOT363
Mounting: SMD
Kind of package: reel; tape
Base resistor: 1kΩ
Base-emitter resistor: 1kΩ
Current gain: 3...5
Quantity in set/package: 3000pcs.
Category: Complementary transistors
Description: Transistor: NPN / PNP; bipolar; BRT,complementary pair; 50V
Type of transistor: NPN / PNP
Polarisation: bipolar
Kind of transistor: BRT; complementary pair
Collector-emitter voltage: 50V
Collector current: 0.1A
Power dissipation: 0.385W
Case: SC70-6; SC88; SOT363
Mounting: SMD
Kind of package: reel; tape
Base resistor: 1kΩ
Base-emitter resistor: 1kΩ
Current gain: 3...5
Quantity in set/package: 3000pcs.
товару немає в наявності
В кошику
од. на суму грн.
| MUN5334DW1T1G |
![]() |
Виробник: ONSEMI
Category: Complementary transistors
Description: Transistor: NPN / PNP; bipolar; BRT,complementary pair; 50V
Type of transistor: NPN / PNP
Polarisation: bipolar
Kind of transistor: BRT; complementary pair
Collector-emitter voltage: 50V
Collector current: 0.1A
Power dissipation: 0.385W
Case: SC70-6; SC88; SOT363
Mounting: SMD
Kind of package: reel; tape
Base resistor: 22kΩ
Base-emitter resistor: 47kΩ
Current gain: 80...150
Quantity in set/package: 3000pcs.
Category: Complementary transistors
Description: Transistor: NPN / PNP; bipolar; BRT,complementary pair; 50V
Type of transistor: NPN / PNP
Polarisation: bipolar
Kind of transistor: BRT; complementary pair
Collector-emitter voltage: 50V
Collector current: 0.1A
Power dissipation: 0.385W
Case: SC70-6; SC88; SOT363
Mounting: SMD
Kind of package: reel; tape
Base resistor: 22kΩ
Base-emitter resistor: 47kΩ
Current gain: 80...150
Quantity in set/package: 3000pcs.
товару немає в наявності
В кошику
од. на суму грн.
| MUN5335DW1T2G |
![]() |
Виробник: ONSEMI
Category: Complementary transistors
Description: Transistor: NPN / PNP; bipolar
Type of transistor: NPN / PNP
Polarisation: bipolar
Mounting: SMD
Category: Complementary transistors
Description: Transistor: NPN / PNP; bipolar
Type of transistor: NPN / PNP
Polarisation: bipolar
Mounting: SMD
товару немає в наявності
В кошику
од. на суму грн.
| MUN5338DW1T3G |
![]() |
Виробник: ONSEMI
Category: Complementary transistors
Description: Transistor: NPN / PNP; bipolar; BRT,complementary pair; 50V
Type of transistor: NPN / PNP
Polarisation: bipolar
Kind of transistor: BRT; complementary pair
Collector-emitter voltage: 50V
Collector current: 0.1A
Case: SC70-6; SC88; SOT363
Mounting: SMD
Kind of package: reel; tape
Base resistor: 4.7/47kΩ
Base-emitter resistor: 10/47kΩ
Quantity in set/package: 10000pcs.
Category: Complementary transistors
Description: Transistor: NPN / PNP; bipolar; BRT,complementary pair; 50V
Type of transistor: NPN / PNP
Polarisation: bipolar
Kind of transistor: BRT; complementary pair
Collector-emitter voltage: 50V
Collector current: 0.1A
Case: SC70-6; SC88; SOT363
Mounting: SMD
Kind of package: reel; tape
Base resistor: 4.7/47kΩ
Base-emitter resistor: 10/47kΩ
Quantity in set/package: 10000pcs.
товару немає в наявності
В кошику
од. на суму грн.
| SMUN5330DW1T1G |
![]() |
Виробник: ONSEMI
Category: Complementary transistors
Description: Transistor: NPN / PNP; bipolar; BRT,complementary pair; 50V; 0.1A
Type of transistor: NPN / PNP
Polarisation: bipolar
Kind of transistor: BRT; complementary pair
Collector-emitter voltage: 50V
Collector current: 0.1A
Power dissipation: 0.25W
Case: SC70-6; SC88; SOT363
Mounting: SMD
Kind of package: reel; tape
Base resistor: 1kΩ
Application: automotive industry
Base-emitter resistor: 1kΩ
Category: Complementary transistors
Description: Transistor: NPN / PNP; bipolar; BRT,complementary pair; 50V; 0.1A
Type of transistor: NPN / PNP
Polarisation: bipolar
Kind of transistor: BRT; complementary pair
Collector-emitter voltage: 50V
Collector current: 0.1A
Power dissipation: 0.25W
Case: SC70-6; SC88; SOT363
Mounting: SMD
Kind of package: reel; tape
Base resistor: 1kΩ
Application: automotive industry
Base-emitter resistor: 1kΩ
товару немає в наявності
В кошику
од. на суму грн.
| SMUN5335DW1T2G |
![]() |
Виробник: ONSEMI
Category: Complementary transistors
Description: Transistor: NPN / PNP; bipolar; BRT,complementary pair; 50V; 0.1A
Type of transistor: NPN / PNP
Polarisation: bipolar
Kind of transistor: BRT; complementary pair
Collector-emitter voltage: 50V
Collector current: 0.1A
Power dissipation: 0.25W
Case: SC70-6; SC88; SOT363
Mounting: SMD
Kind of package: reel; tape
Base resistor: 2.2kΩ
Application: automotive industry
Base-emitter resistor: 47kΩ
Category: Complementary transistors
Description: Transistor: NPN / PNP; bipolar; BRT,complementary pair; 50V; 0.1A
Type of transistor: NPN / PNP
Polarisation: bipolar
Kind of transistor: BRT; complementary pair
Collector-emitter voltage: 50V
Collector current: 0.1A
Power dissipation: 0.25W
Case: SC70-6; SC88; SOT363
Mounting: SMD
Kind of package: reel; tape
Base resistor: 2.2kΩ
Application: automotive industry
Base-emitter resistor: 47kΩ
товару немає в наявності
В кошику
од. на суму грн.
| NSVMUN5331DW1T1G |
![]() |
Виробник: ONSEMI
Category: Complementary transistors
Description: Transistor: NPN / PNP; bipolar; BRT,complementary pair; 50V
Type of transistor: NPN / PNP
Polarisation: bipolar
Kind of transistor: BRT; complementary pair
Collector-emitter voltage: 50V
Collector current: 0.1A
Power dissipation: 0.385W
Case: SC70-6; SC88; SOT363
Mounting: SMD
Kind of package: reel; tape
Base resistor: 2.2kΩ
Application: automotive industry
Base-emitter resistor: 2.2kΩ
Current gain: 8...15
Quantity in set/package: 3000pcs.
Category: Complementary transistors
Description: Transistor: NPN / PNP; bipolar; BRT,complementary pair; 50V
Type of transistor: NPN / PNP
Polarisation: bipolar
Kind of transistor: BRT; complementary pair
Collector-emitter voltage: 50V
Collector current: 0.1A
Power dissipation: 0.385W
Case: SC70-6; SC88; SOT363
Mounting: SMD
Kind of package: reel; tape
Base resistor: 2.2kΩ
Application: automotive industry
Base-emitter resistor: 2.2kΩ
Current gain: 8...15
Quantity in set/package: 3000pcs.
товару немає в наявності
В кошику
од. на суму грн.
| NSVMUN5332DW1T1G |
![]() |
Виробник: ONSEMI
Category: Complementary transistors
Description: Transistor: NPN / PNP; bipolar; BRT,complementary pair; 50V
Type of transistor: NPN / PNP
Polarisation: bipolar
Kind of transistor: BRT; complementary pair
Collector-emitter voltage: 50V
Collector current: 0.1A
Power dissipation: 0.385W
Case: SC70-6; SC88; SOT363
Mounting: SMD
Kind of package: reel; tape
Base resistor: 4.7kΩ
Application: automotive industry
Base-emitter resistor: 4.7kΩ
Current gain: 15...30
Quantity in set/package: 3000pcs.
Category: Complementary transistors
Description: Transistor: NPN / PNP; bipolar; BRT,complementary pair; 50V
Type of transistor: NPN / PNP
Polarisation: bipolar
Kind of transistor: BRT; complementary pair
Collector-emitter voltage: 50V
Collector current: 0.1A
Power dissipation: 0.385W
Case: SC70-6; SC88; SOT363
Mounting: SMD
Kind of package: reel; tape
Base resistor: 4.7kΩ
Application: automotive industry
Base-emitter resistor: 4.7kΩ
Current gain: 15...30
Quantity in set/package: 3000pcs.
товару немає в наявності
В кошику
од. на суму грн.
| NSVMUN5333DW1T1G |
![]() |
Виробник: ONSEMI
Category: Complementary transistors
Description: Transistor: NPN / PNP; bipolar; BRT,complementary pair; 50V
Type of transistor: NPN / PNP
Polarisation: bipolar
Kind of transistor: BRT; complementary pair
Collector-emitter voltage: 50V
Collector current: 0.1A
Power dissipation: 0.385W
Case: SC70-6; SC88; SOT363
Mounting: SMD
Kind of package: reel; tape
Base resistor: 4.7kΩ
Application: automotive industry
Base-emitter resistor: 47kΩ
Current gain: 80...200
Quantity in set/package: 3000pcs.
Category: Complementary transistors
Description: Transistor: NPN / PNP; bipolar; BRT,complementary pair; 50V
Type of transistor: NPN / PNP
Polarisation: bipolar
Kind of transistor: BRT; complementary pair
Collector-emitter voltage: 50V
Collector current: 0.1A
Power dissipation: 0.385W
Case: SC70-6; SC88; SOT363
Mounting: SMD
Kind of package: reel; tape
Base resistor: 4.7kΩ
Application: automotive industry
Base-emitter resistor: 47kΩ
Current gain: 80...200
Quantity in set/package: 3000pcs.
товару немає в наявності
В кошику
од. на суму грн.
| NSVMUN5334DW1T1G |
![]() |
Виробник: ONSEMI
Category: Complementary transistors
Description: Transistor: NPN / PNP; bipolar; BRT,complementary pair; 50V
Type of transistor: NPN / PNP
Polarisation: bipolar
Kind of transistor: BRT; complementary pair
Collector-emitter voltage: 50V
Collector current: 0.1A
Power dissipation: 0.385W
Case: SC70-6; SC88; SOT363
Mounting: SMD
Kind of package: reel; tape
Base resistor: 22kΩ
Application: automotive industry
Base-emitter resistor: 47kΩ
Current gain: 80...150
Quantity in set/package: 3000pcs.
Category: Complementary transistors
Description: Transistor: NPN / PNP; bipolar; BRT,complementary pair; 50V
Type of transistor: NPN / PNP
Polarisation: bipolar
Kind of transistor: BRT; complementary pair
Collector-emitter voltage: 50V
Collector current: 0.1A
Power dissipation: 0.385W
Case: SC70-6; SC88; SOT363
Mounting: SMD
Kind of package: reel; tape
Base resistor: 22kΩ
Application: automotive industry
Base-emitter resistor: 47kΩ
Current gain: 80...150
Quantity in set/package: 3000pcs.
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| NSBC114YDP6T5G |
![]() |
Виробник: ONSEMI
Category: NPN SMD transistors
Description: Transistor: NPN x2; bipolar; BRT; 50V; 100mA; 408mW; SOT963; R1: 10kΩ
Type of transistor: NPN x2
Polarisation: bipolar
Kind of transistor: BRT
Collector-emitter voltage: 50V
Collector current: 0.1A
Power dissipation: 408mW
Case: SOT963
Current gain: 80...140
Mounting: SMD
Quantity in set/package: 8000pcs.
Kind of package: reel; tape
Base resistor: 10kΩ
Base-emitter resistor: 47kΩ
Category: NPN SMD transistors
Description: Transistor: NPN x2; bipolar; BRT; 50V; 100mA; 408mW; SOT963; R1: 10kΩ
Type of transistor: NPN x2
Polarisation: bipolar
Kind of transistor: BRT
Collector-emitter voltage: 50V
Collector current: 0.1A
Power dissipation: 408mW
Case: SOT963
Current gain: 80...140
Mounting: SMD
Quantity in set/package: 8000pcs.
Kind of package: reel; tape
Base resistor: 10kΩ
Base-emitter resistor: 47kΩ
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| NSBC114TDXV6T1G |
![]() |
Виробник: ONSEMI
Category: NPN SMD transistors
Description: Transistor: NPN x2; bipolar; BRT; 50V; 100mA; 500mW; SOT563; 10kΩ
Type of transistor: NPN x2
Polarisation: bipolar
Kind of transistor: BRT
Collector-emitter voltage: 50V
Collector current: 0.1A
Power dissipation: 0.5W
Case: SOT563
Current gain: 160...350
Mounting: SMD
Quantity in set/package: 4000pcs.
Kind of package: reel; tape
Base resistor: 10kΩ
Category: NPN SMD transistors
Description: Transistor: NPN x2; bipolar; BRT; 50V; 100mA; 500mW; SOT563; 10kΩ
Type of transistor: NPN x2
Polarisation: bipolar
Kind of transistor: BRT
Collector-emitter voltage: 50V
Collector current: 0.1A
Power dissipation: 0.5W
Case: SOT563
Current gain: 160...350
Mounting: SMD
Quantity in set/package: 4000pcs.
Kind of package: reel; tape
Base resistor: 10kΩ
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В кошику
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| NSBC114EDP6T5G |
![]() |
Виробник: ONSEMI
Category: NPN SMD transistors
Description: Transistor: NPN x2; bipolar; BRT; 50V; 100mA; 408mW; SOT963; R1: 10kΩ
Type of transistor: NPN x2
Polarisation: bipolar
Kind of transistor: BRT
Collector-emitter voltage: 50V
Collector current: 0.1A
Power dissipation: 408mW
Case: SOT963
Current gain: 35...60
Mounting: SMD
Quantity in set/package: 8000pcs.
Kind of package: reel; tape
Base resistor: 10kΩ
Base-emitter resistor: 10kΩ
Category: NPN SMD transistors
Description: Transistor: NPN x2; bipolar; BRT; 50V; 100mA; 408mW; SOT963; R1: 10kΩ
Type of transistor: NPN x2
Polarisation: bipolar
Kind of transistor: BRT
Collector-emitter voltage: 50V
Collector current: 0.1A
Power dissipation: 408mW
Case: SOT963
Current gain: 35...60
Mounting: SMD
Quantity in set/package: 8000pcs.
Kind of package: reel; tape
Base resistor: 10kΩ
Base-emitter resistor: 10kΩ
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В кошику
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| NSBC114EDXV6T1G |
![]() |
Виробник: ONSEMI
Category: NPN SMD transistors
Description: Transistor: NPN x2; bipolar; BRT; 50V; 100mA; 500mW; SOT563; R1: 10kΩ
Type of transistor: NPN x2
Polarisation: bipolar
Kind of transistor: BRT
Collector-emitter voltage: 50V
Collector current: 0.1A
Power dissipation: 0.5W
Case: SOT563
Current gain: 35...60
Mounting: SMD
Quantity in set/package: 4000pcs.
Kind of package: reel; tape
Base resistor: 10kΩ
Base-emitter resistor: 10kΩ
Category: NPN SMD transistors
Description: Transistor: NPN x2; bipolar; BRT; 50V; 100mA; 500mW; SOT563; R1: 10kΩ
Type of transistor: NPN x2
Polarisation: bipolar
Kind of transistor: BRT
Collector-emitter voltage: 50V
Collector current: 0.1A
Power dissipation: 0.5W
Case: SOT563
Current gain: 35...60
Mounting: SMD
Quantity in set/package: 4000pcs.
Kind of package: reel; tape
Base resistor: 10kΩ
Base-emitter resistor: 10kΩ
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| NSBC114EF3T5G |
![]() |
Виробник: ONSEMI
Category: NPN SMD transistors
Description: Transistor: NPN; bipolar; BRT; 50V; 100mA; 297mW; SOT1123; R1: 10kΩ
Type of transistor: NPN
Polarisation: bipolar
Kind of transistor: BRT
Collector-emitter voltage: 50V
Collector current: 0.1A
Power dissipation: 297mW
Case: SOT1123
Current gain: 35...60
Mounting: SMD
Quantity in set/package: 8000pcs.
Kind of package: reel; tape
Base resistor: 10kΩ
Base-emitter resistor: 10kΩ
Category: NPN SMD transistors
Description: Transistor: NPN; bipolar; BRT; 50V; 100mA; 297mW; SOT1123; R1: 10kΩ
Type of transistor: NPN
Polarisation: bipolar
Kind of transistor: BRT
Collector-emitter voltage: 50V
Collector current: 0.1A
Power dissipation: 297mW
Case: SOT1123
Current gain: 35...60
Mounting: SMD
Quantity in set/package: 8000pcs.
Kind of package: reel; tape
Base resistor: 10kΩ
Base-emitter resistor: 10kΩ
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од. на суму грн.
| NSBC114EPDP6T5G |
![]() |
Виробник: ONSEMI
Category: Complementary transistors
Description: Transistor: NPN / PNP; bipolar; BRT,complementary pair; 50V
Type of transistor: NPN / PNP
Polarisation: bipolar
Kind of transistor: BRT; complementary pair
Collector-emitter voltage: 50V
Collector current: 0.1A
Power dissipation: 408mW
Case: SOT963
Current gain: 35...60
Mounting: SMD
Quantity in set/package: 8000pcs.
Kind of package: reel; tape
Base resistor: 10kΩ
Base-emitter resistor: 10kΩ
Category: Complementary transistors
Description: Transistor: NPN / PNP; bipolar; BRT,complementary pair; 50V
Type of transistor: NPN / PNP
Polarisation: bipolar
Kind of transistor: BRT; complementary pair
Collector-emitter voltage: 50V
Collector current: 0.1A
Power dissipation: 408mW
Case: SOT963
Current gain: 35...60
Mounting: SMD
Quantity in set/package: 8000pcs.
Kind of package: reel; tape
Base resistor: 10kΩ
Base-emitter resistor: 10kΩ
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В кошику
од. на суму грн.
| NSBC114EPDXV6T1G |
![]() |
Виробник: ONSEMI
Category: Complementary transistors
Description: Transistor: NPN / PNP; bipolar; BRT,complementary pair; 50V
Type of transistor: NPN / PNP
Polarisation: bipolar
Kind of transistor: BRT; complementary pair
Collector-emitter voltage: 50V
Collector current: 0.1A
Power dissipation: 0.5W
Case: SOT563
Current gain: 35...60
Mounting: SMD
Quantity in set/package: 4000pcs.
Kind of package: reel; tape
Base resistor: 10kΩ
Base-emitter resistor: 10kΩ
Category: Complementary transistors
Description: Transistor: NPN / PNP; bipolar; BRT,complementary pair; 50V
Type of transistor: NPN / PNP
Polarisation: bipolar
Kind of transistor: BRT; complementary pair
Collector-emitter voltage: 50V
Collector current: 0.1A
Power dissipation: 0.5W
Case: SOT563
Current gain: 35...60
Mounting: SMD
Quantity in set/package: 4000pcs.
Kind of package: reel; tape
Base resistor: 10kΩ
Base-emitter resistor: 10kΩ
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В кошику
од. на суму грн.
| NSBC114TDP6T5G |
![]() |
Виробник: ONSEMI
Category: NPN SMD transistors
Description: Transistor: NPN x2; bipolar; BRT; 50V; 100mA; 408mW; SOT963; 10kΩ
Type of transistor: NPN x2
Polarisation: bipolar
Kind of transistor: BRT
Collector-emitter voltage: 50V
Collector current: 0.1A
Power dissipation: 408mW
Case: SOT963
Current gain: 160...350
Mounting: SMD
Quantity in set/package: 8000pcs.
Kind of package: reel; tape
Base resistor: 10kΩ
Category: NPN SMD transistors
Description: Transistor: NPN x2; bipolar; BRT; 50V; 100mA; 408mW; SOT963; 10kΩ
Type of transistor: NPN x2
Polarisation: bipolar
Kind of transistor: BRT
Collector-emitter voltage: 50V
Collector current: 0.1A
Power dissipation: 408mW
Case: SOT963
Current gain: 160...350
Mounting: SMD
Quantity in set/package: 8000pcs.
Kind of package: reel; tape
Base resistor: 10kΩ
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В кошику
од. на суму грн.
| NSBC114TPDXV6T1G |
![]() |
Виробник: ONSEMI
Category: Complementary transistors
Description: Transistor: NPN / PNP; bipolar; BRT,complementary pair; 50V; 10kΩ
Type of transistor: NPN / PNP
Polarisation: bipolar
Kind of transistor: BRT; complementary pair
Collector-emitter voltage: 50V
Collector current: 0.1A
Power dissipation: 0.5W
Case: SOT563
Current gain: 160...350
Mounting: SMD
Quantity in set/package: 4000pcs.
Kind of package: reel; tape
Base resistor: 10kΩ
Category: Complementary transistors
Description: Transistor: NPN / PNP; bipolar; BRT,complementary pair; 50V; 10kΩ
Type of transistor: NPN / PNP
Polarisation: bipolar
Kind of transistor: BRT; complementary pair
Collector-emitter voltage: 50V
Collector current: 0.1A
Power dissipation: 0.5W
Case: SOT563
Current gain: 160...350
Mounting: SMD
Quantity in set/package: 4000pcs.
Kind of package: reel; tape
Base resistor: 10kΩ
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В кошику
од. на суму грн.
| NSBC114YDXV6T1G |
![]() |
Виробник: ONSEMI
Category: NPN SMD transistors
Description: Transistor: NPN x2; bipolar; BRT; 50V; 100mA; 500mW; SOT563; R1: 10kΩ
Type of transistor: NPN x2
Polarisation: bipolar
Kind of transistor: BRT
Collector-emitter voltage: 50V
Collector current: 0.1A
Power dissipation: 0.5W
Case: SOT563
Current gain: 80...140
Mounting: SMD
Quantity in set/package: 4000pcs.
Kind of package: reel; tape
Base resistor: 10kΩ
Base-emitter resistor: 47kΩ
Category: NPN SMD transistors
Description: Transistor: NPN x2; bipolar; BRT; 50V; 100mA; 500mW; SOT563; R1: 10kΩ
Type of transistor: NPN x2
Polarisation: bipolar
Kind of transistor: BRT
Collector-emitter voltage: 50V
Collector current: 0.1A
Power dissipation: 0.5W
Case: SOT563
Current gain: 80...140
Mounting: SMD
Quantity in set/package: 4000pcs.
Kind of package: reel; tape
Base resistor: 10kΩ
Base-emitter resistor: 47kΩ
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В кошику
од. на суму грн.
| NSBC114YF3T5G |
![]() |
Виробник: ONSEMI
Category: NPN SMD transistors
Description: Transistor: NPN; bipolar; BRT; 50V; 100mA; 297mW; SOT1123; R1: 10kΩ
Type of transistor: NPN
Polarisation: bipolar
Kind of transistor: BRT
Collector-emitter voltage: 50V
Collector current: 0.1A
Power dissipation: 297mW
Case: SOT1123
Current gain: 80...140
Mounting: SMD
Quantity in set/package: 8000pcs.
Kind of package: reel; tape
Base resistor: 10kΩ
Base-emitter resistor: 47kΩ
Category: NPN SMD transistors
Description: Transistor: NPN; bipolar; BRT; 50V; 100mA; 297mW; SOT1123; R1: 10kΩ
Type of transistor: NPN
Polarisation: bipolar
Kind of transistor: BRT
Collector-emitter voltage: 50V
Collector current: 0.1A
Power dissipation: 297mW
Case: SOT1123
Current gain: 80...140
Mounting: SMD
Quantity in set/package: 8000pcs.
Kind of package: reel; tape
Base resistor: 10kΩ
Base-emitter resistor: 47kΩ
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В кошику
од. на суму грн.
| NSBC114YPDP6T5G |
![]() |
Виробник: ONSEMI
Category: Complementary transistors
Description: Transistor: NPN / PNP; bipolar; BRT,complementary pair; 50V
Type of transistor: NPN / PNP
Polarisation: bipolar
Kind of transistor: BRT; complementary pair
Collector-emitter voltage: 50V
Collector current: 0.1A
Power dissipation: 408mW
Case: SOT963
Current gain: 80...140
Mounting: SMD
Quantity in set/package: 8000pcs.
Kind of package: reel; tape
Base resistor: 10kΩ
Base-emitter resistor: 47kΩ
Category: Complementary transistors
Description: Transistor: NPN / PNP; bipolar; BRT,complementary pair; 50V
Type of transistor: NPN / PNP
Polarisation: bipolar
Kind of transistor: BRT; complementary pair
Collector-emitter voltage: 50V
Collector current: 0.1A
Power dissipation: 408mW
Case: SOT963
Current gain: 80...140
Mounting: SMD
Quantity in set/package: 8000pcs.
Kind of package: reel; tape
Base resistor: 10kΩ
Base-emitter resistor: 47kΩ
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В кошику
од. на суму грн.
| NSBC114YPDXV6T1G |
![]() |
Виробник: ONSEMI
Category: Complementary transistors
Description: Transistor: NPN / PNP; bipolar; BRT,complementary pair; 50V
Type of transistor: NPN / PNP
Polarisation: bipolar
Kind of transistor: BRT; complementary pair
Collector-emitter voltage: 50V
Collector current: 0.1A
Power dissipation: 0.5W
Case: SOT563
Current gain: 80...140
Mounting: SMD
Quantity in set/package: 4000pcs.
Kind of package: reel; tape
Base resistor: 10kΩ
Base-emitter resistor: 47kΩ
Category: Complementary transistors
Description: Transistor: NPN / PNP; bipolar; BRT,complementary pair; 50V
Type of transistor: NPN / PNP
Polarisation: bipolar
Kind of transistor: BRT; complementary pair
Collector-emitter voltage: 50V
Collector current: 0.1A
Power dissipation: 0.5W
Case: SOT563
Current gain: 80...140
Mounting: SMD
Quantity in set/package: 4000pcs.
Kind of package: reel; tape
Base resistor: 10kΩ
Base-emitter resistor: 47kΩ
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од. на суму грн.
| NSVBC114EDXV6T1G |
![]() |
Виробник: ONSEMI
Category: NPN SMD transistors
Description: Transistor: NPN x2; bipolar; BRT; 50V; 100mA; 500mW; SOT563; R1: 10kΩ
Type of transistor: NPN x2
Polarisation: bipolar
Kind of transistor: BRT
Collector-emitter voltage: 50V
Collector current: 0.1A
Power dissipation: 0.5W
Case: SOT563
Current gain: 35...60
Mounting: SMD
Quantity in set/package: 4000pcs.
Kind of package: reel; tape
Base resistor: 10kΩ
Application: automotive industry
Base-emitter resistor: 10kΩ
Category: NPN SMD transistors
Description: Transistor: NPN x2; bipolar; BRT; 50V; 100mA; 500mW; SOT563; R1: 10kΩ
Type of transistor: NPN x2
Polarisation: bipolar
Kind of transistor: BRT
Collector-emitter voltage: 50V
Collector current: 0.1A
Power dissipation: 0.5W
Case: SOT563
Current gain: 35...60
Mounting: SMD
Quantity in set/package: 4000pcs.
Kind of package: reel; tape
Base resistor: 10kΩ
Application: automotive industry
Base-emitter resistor: 10kΩ
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од. на суму грн.
| NSVBC114YDXV6T1G |
![]() |
Виробник: ONSEMI
Category: Complementary transistors
Description: Transistor: NPN / PNP; bipolar; BRT,complementary pair; 50V
Type of transistor: NPN / PNP
Polarisation: bipolar
Kind of transistor: BRT; complementary pair
Collector-emitter voltage: 50V
Collector current: 0.1A
Power dissipation: 0.5W
Case: SOT563
Current gain: 80...140
Mounting: SMD
Quantity in set/package: 4000pcs.
Kind of package: reel; tape
Base resistor: 10kΩ
Application: automotive industry
Base-emitter resistor: 47kΩ
Category: Complementary transistors
Description: Transistor: NPN / PNP; bipolar; BRT,complementary pair; 50V
Type of transistor: NPN / PNP
Polarisation: bipolar
Kind of transistor: BRT; complementary pair
Collector-emitter voltage: 50V
Collector current: 0.1A
Power dissipation: 0.5W
Case: SOT563
Current gain: 80...140
Mounting: SMD
Quantity in set/package: 4000pcs.
Kind of package: reel; tape
Base resistor: 10kΩ
Application: automotive industry
Base-emitter resistor: 47kΩ
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од. на суму грн.
| NSVBC114YPDXV6T1G |
![]() |
Виробник: ONSEMI
Category: Complementary transistors
Description: Transistor: NPN / PNP; bipolar; BRT,complementary pair; 50V
Type of transistor: NPN / PNP
Polarisation: bipolar
Kind of transistor: BRT; complementary pair
Collector-emitter voltage: 50V
Collector current: 0.1A
Power dissipation: 0.5W
Case: SOT563
Current gain: 80...140
Mounting: SMD
Quantity in set/package: 4000pcs.
Kind of package: reel; tape
Base resistor: 10kΩ
Application: automotive industry
Base-emitter resistor: 47kΩ
Category: Complementary transistors
Description: Transistor: NPN / PNP; bipolar; BRT,complementary pair; 50V
Type of transistor: NPN / PNP
Polarisation: bipolar
Kind of transistor: BRT; complementary pair
Collector-emitter voltage: 50V
Collector current: 0.1A
Power dissipation: 0.5W
Case: SOT563
Current gain: 80...140
Mounting: SMD
Quantity in set/package: 4000pcs.
Kind of package: reel; tape
Base resistor: 10kΩ
Application: automotive industry
Base-emitter resistor: 47kΩ
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од. на суму грн.
| NCV21872DMR2G |
![]() |
Виробник: ONSEMI
Category: SMD operational amplifiers
Description: IC: operational amplifier; 270kHz; Ch: 2; 1.8÷5.5VDC; Micro8
Type of integrated circuit: operational amplifier
Bandwidth: 270kHz
Number of channels: dual; 2
Mounting: SMT
Voltage supply range: 1.8...5.5V DC
Case: Micro8
Operating temperature: -40...125°C
Slew rate: 0.1V/μs
Integrated circuit features: rail-to-rail; zero-drift
Input offset voltage: 0.045mV
Kind of package: reel; tape
Input bias current: 0.4nA
Input offset current: 800pA
Category: SMD operational amplifiers
Description: IC: operational amplifier; 270kHz; Ch: 2; 1.8÷5.5VDC; Micro8
Type of integrated circuit: operational amplifier
Bandwidth: 270kHz
Number of channels: dual; 2
Mounting: SMT
Voltage supply range: 1.8...5.5V DC
Case: Micro8
Operating temperature: -40...125°C
Slew rate: 0.1V/μs
Integrated circuit features: rail-to-rail; zero-drift
Input offset voltage: 0.045mV
Kind of package: reel; tape
Input bias current: 0.4nA
Input offset current: 800pA
на замовлення 3000 шт:
термін постачання 21-30 дні (днів)| Кількість | Ціна |
|---|---|
| 6+ | 76.31 грн |
| 10+ | 43.34 грн |
| 25+ | 37.82 грн |
| 100+ | 31.06 грн |
| 250+ | 27.27 грн |
| 500+ | 26.78 грн |
| NCV333ASN2T1G |
![]() |
Виробник: ONSEMI
Category: SMD operational amplifiers
Description: IC: operational amplifier; 350kHz; Ch: 1; 1.8÷5.5VDC; SOT23-5
Type of integrated circuit: operational amplifier
Bandwidth: 350kHz
Number of channels: single; 1
Mounting: SMT
Voltage supply range: 1.8...5.5V DC
Case: SOT23-5
Operating temperature: -40...125°C
Slew rate: 0.15V/μs
Integrated circuit features: zero-drift
Input offset voltage: 30µV
Kind of package: reel; tape
Input bias current: 0.2nA
Input offset current: 400pA
Category: SMD operational amplifiers
Description: IC: operational amplifier; 350kHz; Ch: 1; 1.8÷5.5VDC; SOT23-5
Type of integrated circuit: operational amplifier
Bandwidth: 350kHz
Number of channels: single; 1
Mounting: SMT
Voltage supply range: 1.8...5.5V DC
Case: SOT23-5
Operating temperature: -40...125°C
Slew rate: 0.15V/μs
Integrated circuit features: zero-drift
Input offset voltage: 30µV
Kind of package: reel; tape
Input bias current: 0.2nA
Input offset current: 400pA
на замовлення 2900 шт:
термін постачання 21-30 дні (днів)| Кількість | Ціна |
|---|---|
| 10+ | 47.92 грн |
| 14+ | 31.31 грн |
| 25+ | 28.26 грн |
| 50+ | 26.70 грн |
| NVMFWS1D5N08XT1G |
![]() |
Виробник: ONSEMI
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 80V; 253A; Idm: 1071A; 194W; DFNW5
Type of transistor: N-MOSFET
Polarisation: unipolar
Mounting: SMD
Kind of package: reel; tape
Gate charge: 83nC
On-state resistance: 1.43mΩ
Gate-source voltage: ±20V
Drain-source voltage: 80V
Power dissipation: 194W
Drain current: 253A
Pulsed drain current: 1071A
Case: DFNW5
Kind of channel: enhancement
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 80V; 253A; Idm: 1071A; 194W; DFNW5
Type of transistor: N-MOSFET
Polarisation: unipolar
Mounting: SMD
Kind of package: reel; tape
Gate charge: 83nC
On-state resistance: 1.43mΩ
Gate-source voltage: ±20V
Drain-source voltage: 80V
Power dissipation: 194W
Drain current: 253A
Pulsed drain current: 1071A
Case: DFNW5
Kind of channel: enhancement
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| NTMFWS1D5N08XT1G |
![]() |
Виробник: ONSEMI
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 80V; 253A; Idm: 1071A; 194W; DFNW5
Type of transistor: N-MOSFET
Polarisation: unipolar
Mounting: SMD
Kind of package: reel; tape
Gate charge: 121nC
On-state resistance: 1.43mΩ
Gate-source voltage: ±20V
Drain-source voltage: 80V
Power dissipation: 194W
Drain current: 253A
Pulsed drain current: 1071A
Case: DFNW5
Kind of channel: enhancement
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 80V; 253A; Idm: 1071A; 194W; DFNW5
Type of transistor: N-MOSFET
Polarisation: unipolar
Mounting: SMD
Kind of package: reel; tape
Gate charge: 121nC
On-state resistance: 1.43mΩ
Gate-source voltage: ±20V
Drain-source voltage: 80V
Power dissipation: 194W
Drain current: 253A
Pulsed drain current: 1071A
Case: DFNW5
Kind of channel: enhancement
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| NVMFWS1D9N08XT1G |
![]() |
Виробник: ONSEMI
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 80V; 201A; Idm: 866A; 164W; DFNW5
Type of transistor: N-MOSFET
Polarisation: unipolar
Mounting: SMD
Kind of package: reel; tape
Gate charge: 63nC
On-state resistance: 1.9mΩ
Gate-source voltage: ±20V
Drain-source voltage: 80V
Power dissipation: 164W
Drain current: 201A
Pulsed drain current: 866A
Case: DFNW5
Kind of channel: enhancement
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 80V; 201A; Idm: 866A; 164W; DFNW5
Type of transistor: N-MOSFET
Polarisation: unipolar
Mounting: SMD
Kind of package: reel; tape
Gate charge: 63nC
On-state resistance: 1.9mΩ
Gate-source voltage: ±20V
Drain-source voltage: 80V
Power dissipation: 164W
Drain current: 201A
Pulsed drain current: 866A
Case: DFNW5
Kind of channel: enhancement
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| NVMFWS2D1N08XT1G |
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Виробник: ONSEMI
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 80V; 181A; Idm: 761A; 148W; DFNW5
Type of transistor: N-MOSFET
Polarisation: unipolar
Mounting: SMD
Kind of package: reel; tape
Gate charge: 53nC
On-state resistance: 2.1mΩ
Gate-source voltage: ±20V
Drain-source voltage: 80V
Power dissipation: 148W
Drain current: 181A
Pulsed drain current: 761A
Case: DFNW5
Kind of channel: enhancement
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 80V; 181A; Idm: 761A; 148W; DFNW5
Type of transistor: N-MOSFET
Polarisation: unipolar
Mounting: SMD
Kind of package: reel; tape
Gate charge: 53nC
On-state resistance: 2.1mΩ
Gate-source voltage: ±20V
Drain-source voltage: 80V
Power dissipation: 148W
Drain current: 181A
Pulsed drain current: 761A
Case: DFNW5
Kind of channel: enhancement
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| NVMFWS2D5N08XT1G |
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Виробник: ONSEMI
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 80V; 156A; Idm: 640A; 133W; DFNW5
Type of transistor: N-MOSFET
Polarisation: unipolar
Mounting: SMD
Kind of package: reel; tape
Gate charge: 45nC
On-state resistance: 2.55mΩ
Gate-source voltage: ±20V
Drain-source voltage: 80V
Power dissipation: 133W
Drain current: 156A
Pulsed drain current: 640A
Case: DFNW5
Kind of channel: enhancement
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 80V; 156A; Idm: 640A; 133W; DFNW5
Type of transistor: N-MOSFET
Polarisation: unipolar
Mounting: SMD
Kind of package: reel; tape
Gate charge: 45nC
On-state resistance: 2.55mΩ
Gate-source voltage: ±20V
Drain-source voltage: 80V
Power dissipation: 133W
Drain current: 156A
Pulsed drain current: 640A
Case: DFNW5
Kind of channel: enhancement
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| NVMFWS4D5N08XT1G |
Виробник: ONSEMI
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar
Type of transistor: N-MOSFET
Polarisation: unipolar
Mounting: SMD
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar
Type of transistor: N-MOSFET
Polarisation: unipolar
Mounting: SMD
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| NVMFWS016N06CT1G |
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Виробник: ONSEMI
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 60V; 33A; Idm: 226A; 18W; DFNW5
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 60V
Drain current: 33A
Pulsed drain current: 226A
Power dissipation: 18W
Case: DFNW5
Gate-source voltage: ±20V
On-state resistance: 15.6mΩ
Mounting: SMD
Gate charge: 6.9nC
Kind of package: reel; tape
Kind of channel: enhancement
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 60V; 33A; Idm: 226A; 18W; DFNW5
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 60V
Drain current: 33A
Pulsed drain current: 226A
Power dissipation: 18W
Case: DFNW5
Gate-source voltage: ±20V
On-state resistance: 15.6mΩ
Mounting: SMD
Gate charge: 6.9nC
Kind of package: reel; tape
Kind of channel: enhancement
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| 1N5401RLG |
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Виробник: ONSEMI
Category: THT universal diodes
Description: Diode: rectifying; THT; 100V; 3A; reel,tape; Ifsm: 200A; DO27
Type of diode: rectifying
Mounting: THT
Max. off-state voltage: 100V
Load current: 3A
Semiconductor structure: single diode
Kind of package: reel; tape
Max. forward impulse current: 200A
Case: DO27
Max. forward voltage: 1V
Leakage current: 50µA
Category: THT universal diodes
Description: Diode: rectifying; THT; 100V; 3A; reel,tape; Ifsm: 200A; DO27
Type of diode: rectifying
Mounting: THT
Max. off-state voltage: 100V
Load current: 3A
Semiconductor structure: single diode
Kind of package: reel; tape
Max. forward impulse current: 200A
Case: DO27
Max. forward voltage: 1V
Leakage current: 50µA
на замовлення 250 шт:
термін постачання 21-30 дні (днів)| Кількість | Ціна |
|---|---|
| 17+ | 27.51 грн |
| 34+ | 12.28 грн |
| 50+ | 10.55 грн |
| 100+ | 10.22 грн |
| 1N5401G |
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Виробник: ONSEMI
Category: THT universal diodes
Description: Diode: rectifying; THT; 100V; 3A; bulk; Ifsm: 200A; DO27; Ufmax: 1V
Type of diode: rectifying
Mounting: THT
Max. off-state voltage: 100V
Load current: 3A
Semiconductor structure: single diode
Kind of package: bulk
Max. forward impulse current: 200A
Case: DO27
Max. forward voltage: 1V
Leakage current: 50µA
Category: THT universal diodes
Description: Diode: rectifying; THT; 100V; 3A; bulk; Ifsm: 200A; DO27; Ufmax: 1V
Type of diode: rectifying
Mounting: THT
Max. off-state voltage: 100V
Load current: 3A
Semiconductor structure: single diode
Kind of package: bulk
Max. forward impulse current: 200A
Case: DO27
Max. forward voltage: 1V
Leakage current: 50µA
на замовлення 454 шт:
термін постачання 21-30 дні (днів)| Кількість | Ціна |
|---|---|
| 19+ | 23.96 грн |
| 27+ | 15.82 грн |
| 100+ | 11.04 грн |
| 250+ | 10.71 грн |
| 74LVTH245MTC |
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Виробник: ONSEMI
Category: Buffers, transceivers, drivers
Description: IC: digital; bidirectional,transceiver; Ch: 8; BiCMOS; SMD; TSSOP20
Type of integrated circuit: digital
Kind of integrated circuit: bidirectional; transceiver
Number of channels: 8
Mounting: SMD
Case: TSSOP20
Operating temperature: -40...85°C
Kind of output: 3-state
Technology: BiCMOS
Kind of package: tube
Supply voltage: 2.7...3.6V DC
Category: Buffers, transceivers, drivers
Description: IC: digital; bidirectional,transceiver; Ch: 8; BiCMOS; SMD; TSSOP20
Type of integrated circuit: digital
Kind of integrated circuit: bidirectional; transceiver
Number of channels: 8
Mounting: SMD
Case: TSSOP20
Operating temperature: -40...85°C
Kind of output: 3-state
Technology: BiCMOS
Kind of package: tube
Supply voltage: 2.7...3.6V DC
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| BC847BM3T5G |
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Виробник: ONSEMI
Category: NPN SMD transistors
Description: Transistor: NPN; bipolar; 45V; 0.1A; 0.26W; SOT723
Type of transistor: NPN
Polarisation: bipolar
Collector-emitter voltage: 45V
Collector current: 0.1A
Power dissipation: 0.26W
Case: SOT723
Current gain: 200...450
Mounting: SMD
Kind of package: reel; tape
Frequency: 100MHz
Category: NPN SMD transistors
Description: Transistor: NPN; bipolar; 45V; 0.1A; 0.26W; SOT723
Type of transistor: NPN
Polarisation: bipolar
Collector-emitter voltage: 45V
Collector current: 0.1A
Power dissipation: 0.26W
Case: SOT723
Current gain: 200...450
Mounting: SMD
Kind of package: reel; tape
Frequency: 100MHz
на замовлення 8000 шт:
термін постачання 21-30 дні (днів)| Кількість | Ціна |
|---|---|
| 25+ | 17.75 грн |
| 31+ | 13.68 грн |
| 50+ | 9.51 грн |
| 100+ | 7.81 грн |
| 250+ | 5.99 грн |
| 500+ | 4.94 грн |
| 1000+ | 4.17 грн |
| 5000+ | 3.09 грн |
| FCB070N65S3 |
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Виробник: ONSEMI
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 650V; 44A; 312W; D2PAK
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 650V
Drain current: 44A
Power dissipation: 312W
Case: D2PAK
Gate-source voltage: ±30V
On-state resistance: 70mΩ
Mounting: SMD
Kind of package: reel; tape
Kind of channel: enhancement
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 650V; 44A; 312W; D2PAK
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 650V
Drain current: 44A
Power dissipation: 312W
Case: D2PAK
Gate-source voltage: ±30V
On-state resistance: 70mΩ
Mounting: SMD
Kind of package: reel; tape
Kind of channel: enhancement
на замовлення 640 шт:
термін постачання 21-30 дні (днів)| Кількість | Ціна |
|---|---|
| 2+ | 424.15 грн |
| 10+ | 305.69 грн |
| 25+ | 297.45 грн |
| NTBL070N65S3 |
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Виробник: ONSEMI
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 650V; 44A; Idm: 110A; 312W; H-PSOF8L
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 650V
Drain current: 44A
Pulsed drain current: 110A
Power dissipation: 312W
Case: H-PSOF8L
Gate-source voltage: ±30V
On-state resistance: 70mΩ
Mounting: SMD
Gate charge: 82nC
Kind of package: reel; tape
Kind of channel: enhancement
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 650V; 44A; Idm: 110A; 312W; H-PSOF8L
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 650V
Drain current: 44A
Pulsed drain current: 110A
Power dissipation: 312W
Case: H-PSOF8L
Gate-source voltage: ±30V
On-state resistance: 70mΩ
Mounting: SMD
Gate charge: 82nC
Kind of package: reel; tape
Kind of channel: enhancement
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| 1N5363BG |
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Виробник: ONSEMI
Category: THT Zener diodes
Description: Diode: Zener; 5W; 30V; bulk; CASE017AA; single diode; 0.5uA; 1N53xxB
Type of diode: Zener
Power dissipation: 5W
Zener voltage: 30V
Kind of package: bulk
Case: CASE017AA
Mounting: THT
Tolerance: ±5%
Semiconductor structure: single diode
Leakage current: 0.5µA
Manufacturer series: 1N53xxB
Category: THT Zener diodes
Description: Diode: Zener; 5W; 30V; bulk; CASE017AA; single diode; 0.5uA; 1N53xxB
Type of diode: Zener
Power dissipation: 5W
Zener voltage: 30V
Kind of package: bulk
Case: CASE017AA
Mounting: THT
Tolerance: ±5%
Semiconductor structure: single diode
Leakage current: 0.5µA
Manufacturer series: 1N53xxB
на замовлення 929 шт:
термін постачання 21-30 дні (днів)| Кількість | Ціна |
|---|---|
| 16+ | 29.28 грн |
| 18+ | 23.73 грн |
| 20+ | 21.51 грн |
| 100+ | 14.91 грн |
| 250+ | 12.61 грн |
| 500+ | 12.36 грн |
| 1N5363BRLG | ![]() |
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Виробник: ONSEMI
Category: THT Zener diodes
Description: Diode: Zener; 5W; 30V; reel,tape; CASE017AA; single diode; 0.5uA
Type of diode: Zener
Power dissipation: 5W
Zener voltage: 30V
Kind of package: reel; tape
Case: CASE017AA
Mounting: THT
Tolerance: ±5%
Semiconductor structure: single diode
Leakage current: 0.5µA
Manufacturer series: 1N53xxB
Category: THT Zener diodes
Description: Diode: Zener; 5W; 30V; reel,tape; CASE017AA; single diode; 0.5uA
Type of diode: Zener
Power dissipation: 5W
Zener voltage: 30V
Kind of package: reel; tape
Case: CASE017AA
Mounting: THT
Tolerance: ±5%
Semiconductor structure: single diode
Leakage current: 0.5µA
Manufacturer series: 1N53xxB
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| LM833DR2G |
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Виробник: ONSEMI
Category: SMD operational amplifiers
Description: IC: operational amplifier; 15MHz; Ch: 2; ±5÷18VDC,10÷36VDC; SO8
Type of integrated circuit: operational amplifier
Bandwidth: 15MHz
Number of channels: dual; 2
Mounting: SMT
Voltage supply range: ± 5...18V DC; 10...36V DC
Case: SO8
Operating temperature: -40...85°C
Slew rate: 7V/μs
Input offset voltage: 0.3mV
Kind of package: reel; tape
Integrated circuit features: low noise
Category: SMD operational amplifiers
Description: IC: operational amplifier; 15MHz; Ch: 2; ±5÷18VDC,10÷36VDC; SO8
Type of integrated circuit: operational amplifier
Bandwidth: 15MHz
Number of channels: dual; 2
Mounting: SMT
Voltage supply range: ± 5...18V DC; 10...36V DC
Case: SO8
Operating temperature: -40...85°C
Slew rate: 7V/μs
Input offset voltage: 0.3mV
Kind of package: reel; tape
Integrated circuit features: low noise
на замовлення 2956 шт:
термін постачання 21-30 дні (днів)| Кількість | Ціна |
|---|---|
| 22+ | 20.41 грн |
| 27+ | 15.49 грн |
| 30+ | 13.76 грн |
| 35+ | 11.87 грн |
| 100+ | 9.81 грн |
| 200+ | 9.06 грн |
| 250+ | 8.90 грн |
| 500+ | 8.40 грн |
| 1000+ | 8.32 грн |
| MC14584BDG |
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Виробник: ONSEMI
Category: Gates, inverters
Description: IC: digital; NOT; Ch: 6; IN: 1; CMOS; SMD; SO14; 3÷18VDC; -55÷125°C
Supply voltage: 3...18V DC
Technology: CMOS
Type of integrated circuit: digital
Case: SO14
Family: HEF4000B
Number of channels: hex; 6
Kind of gate: NOT
Kind of package: tube
Mounting: SMD
Kind of input: with Schmitt trigger
Operating temperature: -55...125°C
Delay time: 100ns
Number of inputs: 1
Category: Gates, inverters
Description: IC: digital; NOT; Ch: 6; IN: 1; CMOS; SMD; SO14; 3÷18VDC; -55÷125°C
Supply voltage: 3...18V DC
Technology: CMOS
Type of integrated circuit: digital
Case: SO14
Family: HEF4000B
Number of channels: hex; 6
Kind of gate: NOT
Kind of package: tube
Mounting: SMD
Kind of input: with Schmitt trigger
Operating temperature: -55...125°C
Delay time: 100ns
Number of inputs: 1
на замовлення 10 шт:
термін постачання 21-30 дні (днів)| Кількість | Ціна |
|---|---|
| 10+ | 41.20 грн |
| MC14584BDTR2G |
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Виробник: ONSEMI
Category: Gates, inverters
Description: IC: digital; NOT; Ch: 6; IN: 1; CMOS; SMD; TSSOP14; 3÷18VDC; -55÷125°C
Supply voltage: 3...18V DC
Technology: CMOS
Type of integrated circuit: digital
Case: TSSOP14
Family: HEF4000B
Number of channels: hex; 6
Kind of gate: NOT
Kind of package: reel; tape
Mounting: SMD
Kind of input: with Schmitt trigger
Operating temperature: -55...125°C
Delay time: 100ns
Number of inputs: 1
Category: Gates, inverters
Description: IC: digital; NOT; Ch: 6; IN: 1; CMOS; SMD; TSSOP14; 3÷18VDC; -55÷125°C
Supply voltage: 3...18V DC
Technology: CMOS
Type of integrated circuit: digital
Case: TSSOP14
Family: HEF4000B
Number of channels: hex; 6
Kind of gate: NOT
Kind of package: reel; tape
Mounting: SMD
Kind of input: with Schmitt trigger
Operating temperature: -55...125°C
Delay time: 100ns
Number of inputs: 1
на замовлення 2073 шт:
термін постачання 21-30 дні (днів)| Кількість | Ціна |
|---|---|
| 13+ | 35.49 грн |
| 18+ | 23.90 грн |
| 25+ | 21.26 грн |
| 100+ | 19.03 грн |
| FDMQ8205 |
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Виробник: ONSEMI
Category: Integrated circuits - others
Description: IC: driver; single phase transistor bridge; ideal diode bridge
Mounting: SMD
Case: WDFN12
Kind of package: reel; tape
Type of integrated circuit: driver
Technology: GreenBridge™ 2
Kind of integrated circuit: ideal diode bridge
Topology: single phase transistor bridge
Operating temperature: -40...85°C
Category: Integrated circuits - others
Description: IC: driver; single phase transistor bridge; ideal diode bridge
Mounting: SMD
Case: WDFN12
Kind of package: reel; tape
Type of integrated circuit: driver
Technology: GreenBridge™ 2
Kind of integrated circuit: ideal diode bridge
Topology: single phase transistor bridge
Operating temperature: -40...85°C
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| SURA8205T3G-VF01 |
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Виробник: ONSEMI
Category: SMD universal diodes
Description: Diode: rectifying; SMD; 50V; 2A; 30ns; SMA; Ufmax: 940mV; reel,tape
Type of diode: rectifying
Mounting: SMD
Max. off-state voltage: 50V
Load current: 2A
Reverse recovery time: 30ns
Semiconductor structure: single diode
Case: SMA
Max. forward voltage: 0.94V
Kind of package: reel; tape
Application: automotive industry
Category: SMD universal diodes
Description: Diode: rectifying; SMD; 50V; 2A; 30ns; SMA; Ufmax: 940mV; reel,tape
Type of diode: rectifying
Mounting: SMD
Max. off-state voltage: 50V
Load current: 2A
Reverse recovery time: 30ns
Semiconductor structure: single diode
Case: SMA
Max. forward voltage: 0.94V
Kind of package: reel; tape
Application: automotive industry
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| ESD5B5.0ST5G |
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Виробник: ONSEMI
Category: Bidirectional TVS SMD diodes
Description: Diode: TVS; 50W; 6.8V; bidirectional; SOD523; reel,tape; ESD
Type of diode: TVS
Max. off-state voltage: 5V
Breakdown voltage: 6.8V
Semiconductor structure: bidirectional
Case: SOD523
Mounting: SMD
Kind of package: reel; tape
Leakage current: 1µA
Version: ESD
Peak pulse power dissipation: 50W
Category: Bidirectional TVS SMD diodes
Description: Diode: TVS; 50W; 6.8V; bidirectional; SOD523; reel,tape; ESD
Type of diode: TVS
Max. off-state voltage: 5V
Breakdown voltage: 6.8V
Semiconductor structure: bidirectional
Case: SOD523
Mounting: SMD
Kind of package: reel; tape
Leakage current: 1µA
Version: ESD
Peak pulse power dissipation: 50W
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| ESD5B5.0ST5G |
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Виробник: ONSEMI
Category: Bidirectional TVS SMD diodes
Description: Diode: TVS; 50W; 5.8V; bidirectional; SOD523F
Type of diode: TVS
Max. off-state voltage: 5V
Breakdown voltage: 5.8V
Semiconductor structure: bidirectional
Case: SOD523F
Mounting: SMD
Leakage current: 1µA
Peak pulse power dissipation: 50W
Category: Bidirectional TVS SMD diodes
Description: Diode: TVS; 50W; 5.8V; bidirectional; SOD523F
Type of diode: TVS
Max. off-state voltage: 5V
Breakdown voltage: 5.8V
Semiconductor structure: bidirectional
Case: SOD523F
Mounting: SMD
Leakage current: 1µA
Peak pulse power dissipation: 50W
на замовлення 8000 шт:
термін постачання 21-30 дні (днів)| Кількість | Ціна |
|---|---|
| 8000+ | 3.09 грн |
| SBC856BLT3G |
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Виробник: ONSEMI
Category: PNP SMD transistors
Description: Transistor: PNP; bipolar; 65V; 0.1A; 0.225/0.3W; SOT23,TO236AB
Type of transistor: PNP
Polarisation: bipolar
Collector-emitter voltage: 65V
Collector current: 0.1A
Power dissipation: 0.225/0.3W
Case: SOT23; TO236AB
Current gain: 220...475
Mounting: SMD
Kind of package: reel; tape
Frequency: 100MHz
Application: automotive industry
Category: PNP SMD transistors
Description: Transistor: PNP; bipolar; 65V; 0.1A; 0.225/0.3W; SOT23,TO236AB
Type of transistor: PNP
Polarisation: bipolar
Collector-emitter voltage: 65V
Collector current: 0.1A
Power dissipation: 0.225/0.3W
Case: SOT23; TO236AB
Current gain: 220...475
Mounting: SMD
Kind of package: reel; tape
Frequency: 100MHz
Application: automotive industry
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| MMSZ15T1G |
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Виробник: ONSEMI
Category: SMD Zener diodes
Description: Diode: Zener; 0.5W; 15V; SMD; reel,tape; SOD123; single diode
Type of diode: Zener
Power dissipation: 0.5W
Zener voltage: 15V
Kind of package: reel; tape
Case: SOD123
Mounting: SMD
Tolerance: ±5%
Semiconductor structure: single diode
Manufacturer series: MMSZxxTxG
Category: SMD Zener diodes
Description: Diode: Zener; 0.5W; 15V; SMD; reel,tape; SOD123; single diode
Type of diode: Zener
Power dissipation: 0.5W
Zener voltage: 15V
Kind of package: reel; tape
Case: SOD123
Mounting: SMD
Tolerance: ±5%
Semiconductor structure: single diode
Manufacturer series: MMSZxxTxG
на замовлення 6160 шт:
термін постачання 21-30 дні (днів)| Кількість | Ціна |
|---|---|
| 50+ | 8.87 грн |
| 57+ | 7.25 грн |
| 65+ | 6.34 грн |
| 97+ | 4.27 грн |
| 118+ | 3.52 грн |
| 500+ | 2.26 грн |
| 1000+ | 1.89 грн |
| 3000+ | 1.55 грн |
| MMSZ5245BT1G |
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Виробник: ONSEMI
Category: SMD Zener diodes
Description: Diode: Zener; 0.5W; 15V; SMD; reel,tape; SOD123; single diode
Type of diode: Zener
Power dissipation: 0.5W
Zener voltage: 15V
Kind of package: reel; tape
Case: SOD123
Mounting: SMD
Tolerance: ±5%
Semiconductor structure: single diode
Manufacturer series: MMSZ52xxB
Category: SMD Zener diodes
Description: Diode: Zener; 0.5W; 15V; SMD; reel,tape; SOD123; single diode
Type of diode: Zener
Power dissipation: 0.5W
Zener voltage: 15V
Kind of package: reel; tape
Case: SOD123
Mounting: SMD
Tolerance: ±5%
Semiconductor structure: single diode
Manufacturer series: MMSZ52xxB
на замовлення 254 шт:
термін постачання 21-30 дні (днів)| Кількість | Ціна |
|---|---|
| 50+ | 8.87 грн |
| 70+ | 5.93 грн |
| 106+ | 3.89 грн |
| 129+ | 3.21 грн |
| 250+ | 2.52 грн |
| MM3Z15VST1G |
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Виробник: ONSEMI
Category: SMD Zener diodes
Description: Diode: Zener; 0.5W; 15V; SMD; reel,tape; SOD323; single diode
Type of diode: Zener
Power dissipation: 0.5W
Zener voltage: 15V
Kind of package: reel; tape
Case: SOD323
Mounting: SMD
Tolerance: ±2%
Semiconductor structure: single diode
Manufacturer series: MM3ZxxST1G
Category: SMD Zener diodes
Description: Diode: Zener; 0.5W; 15V; SMD; reel,tape; SOD323; single diode
Type of diode: Zener
Power dissipation: 0.5W
Zener voltage: 15V
Kind of package: reel; tape
Case: SOD323
Mounting: SMD
Tolerance: ±2%
Semiconductor structure: single diode
Manufacturer series: MM3ZxxST1G
на замовлення 493 шт:
термін постачання 21-30 дні (днів)| Кількість | Ціна |
|---|---|
| 72+ | 6.21 грн |
| 100+ | 4.12 грн |
| 125+ | 3.30 грн |
| 261+ | 1.58 грн |
| 311+ | 1.33 грн |
| BZX79C15 |
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Виробник: ONSEMI
Category: THT Zener diodes
Description: Diode: Zener; 0.5W; 15V; bulk; CASE017AG; single diode; 0.05uA
Type of diode: Zener
Power dissipation: 0.5W
Zener voltage: 15V
Kind of package: bulk
Case: CASE017AG
Mounting: THT
Tolerance: ±5%
Semiconductor structure: single diode
Manufacturer series: BZX79C
Leakage current: 50nA
Category: THT Zener diodes
Description: Diode: Zener; 0.5W; 15V; bulk; CASE017AG; single diode; 0.05uA
Type of diode: Zener
Power dissipation: 0.5W
Zener voltage: 15V
Kind of package: bulk
Case: CASE017AG
Mounting: THT
Tolerance: ±5%
Semiconductor structure: single diode
Manufacturer series: BZX79C
Leakage current: 50nA
на замовлення 840 шт:
термін постачання 21-30 дні (днів)| Кількість | Ціна |
|---|---|
| 56+ | 7.99 грн |
| 81+ | 5.11 грн |
| 110+ | 3.76 грн |
| 500+ | 1.40 грн |
| MURF1620CTG |
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Виробник: ONSEMI
Category: THT universal diodes
Description: Diode: rectifying; THT; 200V; 16A; tube; Ifsm: 100A; TO220FP; 25ns
Mounting: THT
Reverse recovery time: 25ns
Load current: 16A
Max. off-state voltage: 200V
Max. forward impulse current: 100A
Semiconductor structure: common cathode; double
Case: TO220FP
Type of diode: rectifying
Kind of package: tube
Category: THT universal diodes
Description: Diode: rectifying; THT; 200V; 16A; tube; Ifsm: 100A; TO220FP; 25ns
Mounting: THT
Reverse recovery time: 25ns
Load current: 16A
Max. off-state voltage: 200V
Max. forward impulse current: 100A
Semiconductor structure: common cathode; double
Case: TO220FP
Type of diode: rectifying
Kind of package: tube
на замовлення 99 шт:
термін постачання 21-30 дні (днів)| Кількість | Ціна |
|---|---|
| 4+ | 133.10 грн |
| 5+ | 100.52 грн |
| 10+ | 88.99 грн |
| 50+ | 68.39 грн |
















