| Фото | Назва | Виробник | Інформація | Доступність | Ціна без ПДВ | ||||||||||||||||
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MUN5311DW1T1G | ONSEMI |
Category: Complementary transistorsDescription: Transistor: NPN / PNP; bipolar; BRT,complementary pair; 50V; 0.1A Mounting: SMD Kind of transistor: BRT; complementary pair Type of transistor: NPN / PNP Current gain: 60 Kind of package: reel; tape Base-emitter resistor: 10kΩ Case: SC70-6; SC88; SOT363 Collector current: 0.1A Collector-emitter voltage: 50V Base resistor: 10kΩ Power dissipation: 0.385W Polarisation: bipolar |
на замовлення 255 шт: термін постачання 14-30 дні (днів) |
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MUN5313DW1T1G | ONSEMI |
Category: Complementary transistorsDescription: Transistor: NPN / PNP; bipolar; BRT,complementary pair; 50V; 0.1A Mounting: SMD Kind of transistor: BRT; complementary pair Type of transistor: NPN / PNP Kind of package: reel; tape Base-emitter resistor: 22kΩ Case: SC70-6; SC88; SOT363 Collector current: 0.1A Collector-emitter voltage: 50V Base resistor: 47kΩ Power dissipation: 0.187W Polarisation: bipolar |
на замовлення 218 шт: термін постачання 14-30 дні (днів) |
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SMUN5311DW1T1G | ONSEMI |
Category: Complementary transistorsDescription: Transistor: NPN / PNP; bipolar; BRT,complementary pair; 50V; 0.1A Mounting: SMD Kind of transistor: BRT; complementary pair Application: automotive industry Type of transistor: NPN / PNP Kind of package: reel; tape Base-emitter resistor: 10kΩ Case: SC70-6; SC88; SOT363 Collector current: 0.1A Collector-emitter voltage: 50V Base resistor: 10kΩ Power dissipation: 0.25W Polarisation: bipolar |
на замовлення 1883 шт: термін постачання 14-30 дні (днів) |
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SMUN5314DW1T1G | ONSEMI |
Category: Complementary transistorsDescription: Transistor: NPN / PNP; bipolar; BRT,complementary pair; 50V; 0.1A Mounting: SMD Kind of transistor: BRT; complementary pair Application: automotive industry Type of transistor: NPN / PNP Current gain: 80...140 Kind of package: reel; tape Base-emitter resistor: 47kΩ Case: SC70-6; SC88; SOT363 Collector current: 0.1A Collector-emitter voltage: 50V Base resistor: 10kΩ Power dissipation: 0.25W Polarisation: bipolar |
на замовлення 253 шт: термін постачання 14-30 дні (днів) |
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MUN5312DW1T1G | ONSEMI |
Category: Complementary transistorsDescription: Transistor: NPN / PNP; bipolar; BRT,complementary pair; 50V; 0.1A Mounting: SMD Kind of transistor: BRT; complementary pair Type of transistor: NPN / PNP Current gain: 100 Kind of package: reel; tape Base-emitter resistor: 22kΩ Case: SC70-6; SC88; SOT363 Collector current: 0.1A Collector-emitter voltage: 50V Base resistor: 22kΩ Power dissipation: 0.385W Polarisation: bipolar |
на замовлення 2850 шт: термін постачання 14-30 дні (днів) |
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MUN5315DW1T1G | ONSEMI |
Category: Complementary transistorsDescription: Transistor: NPN / PNP; bipolar; BRT,complementary pair; 50V; 10kΩ Mounting: SMD Kind of transistor: BRT; complementary pair Type of transistor: NPN / PNP Current gain: 160...350 Kind of package: reel; tape Case: SC70-6; SC88; SOT363 Collector current: 0.1A Manufacturer standard package: 3000pcs. Collector-emitter voltage: 50V Base resistor: 10kΩ Power dissipation: 0.385W Polarisation: bipolar |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||||||||||
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MUN5311DW1T2G | ONSEMI |
Category: Complementary transistorsDescription: Transistor: NPN / PNP; bipolar; BRT,complementary pair; 50V; 0.1A Mounting: SMD Kind of transistor: BRT; complementary pair Type of transistor: NPN / PNP Current gain: 60 Kind of package: reel; tape Base-emitter resistor: 10kΩ Case: SC70-6; SC88; SOT363 Collector current: 0.1A Collector-emitter voltage: 50V Base resistor: 10kΩ Power dissipation: 0.385W Polarisation: bipolar |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||||||||||
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MUN5312DW1T2G | ONSEMI |
Category: Complementary transistorsDescription: Transistor: NPN / PNP; bipolar; BRT,complementary pair; 50V; 0.1A Mounting: SMD Kind of transistor: BRT; complementary pair Type of transistor: NPN / PNP Current gain: 100 Kind of package: reel; tape Base-emitter resistor: 22kΩ Case: SC70-6; SC88; SOT363 Collector current: 0.1A Collector-emitter voltage: 50V Base resistor: 22kΩ Power dissipation: 0.385W Polarisation: bipolar |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||||||||||
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MUN5316DW1T1G | ONSEMI |
Category: Complementary transistorsDescription: Transistor: NPN / PNP; bipolar; BRT,complementary pair; 50V; 0.1A Mounting: SMD Kind of transistor: BRT; complementary pair Type of transistor: NPN / PNP Current gain: 160...350 Kind of package: reel; tape Case: SC70-6; SC88; SOT363 Collector current: 0.1A Collector-emitter voltage: 50V Base resistor: 4.7kΩ Power dissipation: 0.25W Polarisation: bipolar |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||||||||||
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SMUN5312DW1T1G | ONSEMI |
Category: Complementary transistorsDescription: Transistor: NPN / PNP; bipolar; BRT,complementary pair; 50V; 0.1A Mounting: SMD Kind of transistor: BRT; complementary pair Application: automotive industry Type of transistor: NPN / PNP Kind of package: reel; tape Base-emitter resistor: 22kΩ Case: SC70-6; SC88; SOT363 Collector current: 0.1A Collector-emitter voltage: 50V Base resistor: 22kΩ Power dissipation: 0.25W Polarisation: bipolar |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||||||||||
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SMUN5311DW1T2G | ONSEMI |
Category: Complementary transistorsDescription: Transistor: NPN / PNP; bipolar; BRT,complementary pair; 50V; 0.1A Mounting: SMD Kind of transistor: BRT; complementary pair Application: automotive industry Type of transistor: NPN / PNP Kind of package: reel; tape Base-emitter resistor: 10kΩ Case: SC70-6; SC88; SOT363 Collector current: 0.1A Collector-emitter voltage: 50V Base resistor: 10kΩ Power dissipation: 0.25W Polarisation: bipolar |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||||||||||
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SMUN5311DW1T3G | ONSEMI |
Category: Complementary transistorsDescription: Transistor: NPN / PNP; bipolar; BRT,complementary pair; 50V; 0.1A Mounting: SMD Kind of transistor: BRT; complementary pair Application: automotive industry Type of transistor: NPN / PNP Kind of package: reel; tape Base-emitter resistor: 10kΩ Case: SC70-6; SC88; SOT363 Collector current: 0.1A Collector-emitter voltage: 50V Base resistor: 10kΩ Power dissipation: 0.25W Polarisation: bipolar |
товару немає в наявності |
Мінімальне замовлення: 10000 шт В кошику од. на суму грн. | ||||||||||||||||
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SMUN5313DW1T1G | ONSEMI |
Category: Complementary transistorsDescription: Transistor: NPN / PNP; bipolar; BRT,complementary pair; 50V; 0.1A Mounting: SMD Kind of transistor: BRT; complementary pair Application: automotive industry Type of transistor: NPN / PNP Kind of package: reel; tape Base-emitter resistor: 47kΩ Case: SC70-6; SC88; SOT363 Collector current: 0.1A Collector-emitter voltage: 50V Base resistor: 47kΩ Power dissipation: 0.25W Polarisation: bipolar |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||||||||||
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SMUN5313DW1T3G | ONSEMI |
Category: Complementary transistorsDescription: Transistor: NPN / PNP; bipolar; BRT,complementary pair; 50V; 0.1A Mounting: SMD Kind of transistor: BRT; complementary pair Application: automotive industry Type of transistor: NPN / PNP Kind of package: reel; tape Base-emitter resistor: 47kΩ Case: SC70-6; SC88; SOT363 Collector current: 0.1A Collector-emitter voltage: 50V Base resistor: 47kΩ Power dissipation: 0.25W Polarisation: bipolar |
товару немає в наявності |
Мінімальне замовлення: 10000 шт В кошику од. на суму грн. | ||||||||||||||||
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SMUN5315DW1T1G | ONSEMI |
Category: Complementary transistorsDescription: Transistor: NPN / PNP; bipolar; BRT,complementary pair; 50V; 10kΩ Mounting: SMD Kind of transistor: BRT; complementary pair Application: automotive industry Type of transistor: NPN / PNP Current gain: 160...350 Kind of package: reel; tape Case: SC70-6; SC88; SOT363 Collector current: 0.1A Manufacturer standard package: 3000pcs. Collector-emitter voltage: 50V Base resistor: 10kΩ Power dissipation: 0.385W Polarisation: bipolar |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||||||||||
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NSVMUN531335DW1T1G | ONSEMI |
Category: Complementary transistorsDescription: Transistor: NPN / PNP; bipolar; BRT,complementary pair; 50V Mounting: SMD Kind of transistor: BRT; complementary pair Application: automotive industry Type of transistor: NPN / PNP Current gain: 80...140 Kind of package: reel; tape Base-emitter resistor: 47kΩ Case: SC70-6; SC88; SOT363 Collector current: 0.1A Manufacturer standard package: 3000pcs. Collector-emitter voltage: 50V Base resistor: 2.2/47kΩ Power dissipation: 0.385W Polarisation: bipolar |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||||||||||
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NSVMUN5312DW1T2G | ONSEMI |
Category: Complementary transistorsDescription: Transistor: NPN / PNP; bipolar; BRT,complementary pair; 50V Mounting: SMD Kind of transistor: BRT; complementary pair Application: automotive industry Type of transistor: NPN / PNP Current gain: 60...100 Kind of package: reel; tape Base-emitter resistor: 22kΩ Case: SC70-6; SC88; SOT363 Collector current: 0.1A Manufacturer standard package: 3000pcs. Collector-emitter voltage: 50V Base resistor: 22kΩ Power dissipation: 0.385W Polarisation: bipolar |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||||||||||
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NSVMUN5316DW1T1G | ONSEMI |
Category: Complementary transistorsDescription: Transistor: NPN / PNP; bipolar; BRT,complementary pair; 50V Mounting: SMD Kind of transistor: BRT; complementary pair Application: automotive industry Type of transistor: NPN / PNP Current gain: 160...350 Kind of package: reel; tape Case: SC70-6; SC88; SOT363 Collector current: 0.1A Manufacturer standard package: 3000pcs. Collector-emitter voltage: 50V Base resistor: 4.7kΩ Power dissipation: 0.385W Polarisation: bipolar |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||||||||||
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BZX85C10 | ONSEMI |
Category: THT Zener diodesDescription: Diode: Zener; 1.3W; 10V; bulk; DO41; single diode; BZX85C Tolerance: ±5% Mounting: THT Manufacturer series: BZX85C Power dissipation: 1.3W Kind of package: bulk Semiconductor structure: single diode Case: DO41 Zener voltage: 10V Type of diode: Zener |
на замовлення 1206 шт: термін постачання 14-30 дні (днів) |
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| BZX85C10-T50R | ONSEMI |
Category: THT Zener diodesDescription: Diode: Zener; 1.3W; 10V; reel,tape; DO41; single diode; BZX85C Type of diode: Zener Power dissipation: 1.3W Zener voltage: 10V Kind of package: reel; tape Case: DO41 Mounting: THT Tolerance: ±5% Semiconductor structure: single diode Manufacturer series: BZX85C |
товару немає в наявності |
В кошику од. на суму грн. | |||||||||||||||||
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NTH4L040N120SC1 | ONSEMI |
Category: THT N channel transistorsDescription: Transistor: N-MOSFET; SiC; unipolar; 1.2kV; 41A; Idm: 232A; 160W Type of transistor: N-MOSFET Polarisation: unipolar Drain-source voltage: 1.2kV Drain current: 41A Pulsed drain current: 232A Power dissipation: 160W Case: TO247-4 Gate-source voltage: -15...25V On-state resistance: 56mΩ Mounting: THT Gate charge: 106nC Kind of package: tube Kind of channel: enhancement Features of semiconductor devices: Kelvin terminal Technology: SiC |
на замовлення 126 шт: термін постачання 14-30 дні (днів) |
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LM2575T-5G | ONSEMI |
Category: Voltage regulators - DC/DC circuitsDescription: PMIC; DC/DC converter; Uin: 4.75÷40VDC; Uout: 5VDC; 1A; TO220-5; THT Type of integrated circuit: PMIC Kind of integrated circuit: DC/DC converter Input voltage: 4.75...40V DC Output voltage: 5V DC Output current: 1A Case: TO220-5 Mounting: THT Frequency: 42...63kHz Topology: buck Number of channels: 1 Operating temperature: -40...125°C Kind of package: tube |
на замовлення 37 шт: термін постачання 14-30 дні (днів) |
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LM2575T-ADJG | ONSEMI |
Category: Voltage regulators - DC/DC circuitsDescription: PMIC; DC/DC converter; Uin: 4.75÷40VDC; Uout: 1.23÷37VDC; 1A; THT Type of integrated circuit: PMIC Kind of integrated circuit: DC/DC converter Input voltage: 4.75...40V DC Output voltage: 1.23...37V DC Output current: 1A Case: TO220-5 Mounting: THT Frequency: 42...63kHz Topology: buck Number of channels: 1 Operating temperature: -40...125°C Kind of package: tube |
на замовлення 361 шт: термін постачання 14-30 дні (днів) |
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LM2575D2T-5G | ONSEMI |
Category: Voltage regulators - DC/DC circuitsDescription: PMIC; DC/DC converter; D2PAK-5; SMD; tube Type of integrated circuit: PMIC Kind of integrated circuit: DC/DC converter Case: D2PAK-5 Mounting: SMD Kind of package: tube |
на замовлення 38 шт: термін постачання 14-30 дні (днів) |
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DF08S | ONSEMI |
Category: SMD/THT sing. phase diode bridge rectif.Description: Bridge rectifier: single-phase; 800V; If: 1.5A; Ifsm: 50A; SDIP 4L Type of bridge rectifier: single-phase Max. off-state voltage: 0.8kV Load current: 1.5A Max. forward impulse current: 50A Case: SDIP 4L Kind of package: reel; tape Electrical mounting: SMT |
на замовлення 3478 шт: термін постачання 14-30 дні (днів) |
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| NSV9435T1G | ONSEMI |
Category: PNP SMD transistorsDescription: Transistor: PNP; bipolar; BRT; 300mV; 3A; 720mW; SOT223; 10kΩ Application: automotive industry Kind of transistor: BRT Kind of package: reel; tape Mounting: SMD Type of transistor: PNP Case: SOT223 Collector-emitter voltage: 300mV Power dissipation: 0.72W Collector current: 3A Quantity in set/package: 1000pcs. Pulsed collector current: 5A Current gain: 220 Base resistor: 10kΩ Frequency: 110MHz Polarisation: bipolar |
товару немає в наявності |
В кошику од. на суму грн. | |||||||||||||||||
| DTA123EET1G | ONSEMI |
Category: PNP SMD transistorsDescription: Transistor: PNP; bipolar; BRT; 50V; 100mA; 300mW; SC75,SOT416 Type of transistor: PNP Polarisation: bipolar Kind of transistor: BRT Collector-emitter voltage: 50V Collector current: 0.1A Power dissipation: 0.3W Case: SC75; SOT416 Mounting: SMD Kind of package: reel; tape Base resistor: 2.2kΩ Base-emitter resistor: 2.2kΩ Current gain: 8...15 Quantity in set/package: 3000pcs. |
товару немає в наявності |
В кошику од. на суму грн. | |||||||||||||||||
| DTA123EM3T5G | ONSEMI |
Category: PNP SMD transistorsDescription: Transistor: PNP; bipolar; BRT; 50V; 100mA; 600mW; SOT723; R1: 2.2kΩ Type of transistor: PNP Polarisation: bipolar Kind of transistor: BRT Collector-emitter voltage: 50V Collector current: 0.1A Power dissipation: 0.6W Case: SOT723 Mounting: SMD Kind of package: reel; tape Base resistor: 2.2kΩ Base-emitter resistor: 2.2kΩ Current gain: 8...15 Quantity in set/package: 8000pcs. |
товару немає в наявності |
В кошику од. на суму грн. | |||||||||||||||||
| DTA123JET1G | ONSEMI |
Category: PNP SMD transistorsDescription: Transistor: PNP; bipolar; BRT; 50V; 100mA; 300mW; SC75,SOT416 Type of transistor: PNP Polarisation: bipolar Kind of transistor: BRT Collector-emitter voltage: 50V Collector current: 0.1A Power dissipation: 0.3W Case: SC75; SOT416 Current gain: 80...140 Mounting: SMD Quantity in set/package: 3000pcs. Kind of package: reel; tape Base resistor: 2.2kΩ Base-emitter resistor: 47kΩ |
товару немає в наявності |
В кошику од. на суму грн. | |||||||||||||||||
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FDD5N50NZTM | ONSEMI |
Category: SMD N channel transistorsDescription: Transistor: N-MOSFET; unipolar; 500V; 4A; Idm: 16A; 62W; DPAK Type of transistor: N-MOSFET Polarisation: unipolar Drain-source voltage: 500V Drain current: 4A Pulsed drain current: 16A Power dissipation: 62W Case: DPAK Gate-source voltage: ±25V On-state resistance: 1.5Ω Mounting: SMD Gate charge: 9nC Kind of package: reel; tape Kind of channel: enhancement |
товару немає в наявності |
Мінімальне замовлення: 2500 шт В кошику од. на суму грн. | ||||||||||||||||
| FQU5N50CTU-WS | ONSEMI |
Category: THT N channel transistorsDescription: Transistor: N-MOSFET; unipolar; 500V; 2.4A; Idm: 16A; 48W; IPAK Type of transistor: N-MOSFET Polarisation: unipolar Drain-source voltage: 500V Drain current: 2.4A Pulsed drain current: 16A Power dissipation: 48W Case: IPAK Gate-source voltage: ±30V On-state resistance: 1.4Ω Mounting: THT Gate charge: 24nC Kind of package: tube Kind of channel: enhancement |
товару немає в наявності |
В кошику од. на суму грн. | |||||||||||||||||
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FDH45N50F-F133 | ONSEMI |
Category: THT N channel transistorsDescription: Transistor: N-MOSFET; unipolar; 500V; 45A; Idm: 180A; 625W; TO247-3 Type of transistor: N-MOSFET Polarisation: unipolar Drain-source voltage: 500V Drain current: 45A Pulsed drain current: 180A Power dissipation: 625W Case: TO247-3 Gate-source voltage: ±30V On-state resistance: 0.12Ω Mounting: THT Gate charge: 105nC Kind of package: tube Kind of channel: enhancement |
на замовлення 415 шт: термін постачання 14-30 дні (днів) |
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FQPF5N50CYDTU | ONSEMI |
Category: THT N channel transistorsDescription: Transistor: N-MOSFET; unipolar; 500V; 2.9A; Idm: 20A; 38W; TO220FP Type of transistor: N-MOSFET Polarisation: unipolar Drain-source voltage: 500V Drain current: 2.9A Pulsed drain current: 20A Power dissipation: 38W Case: TO220FP Gate-source voltage: ±30V On-state resistance: 1.4Ω Mounting: THT Gate charge: 24nC Kind of package: tube Kind of channel: enhancement |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||||||||||
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LM2574N-5G | ONSEMI |
Category: Voltage regulators - DC/DC circuitsDescription: PMIC; DC/DC converter; Uin: 4.75÷40VDC; Uout: 5VDC; 500mA; DIP8; THT Type of integrated circuit: PMIC Kind of integrated circuit: DC/DC converter Input voltage: 4.75...40V DC Output voltage: 5V DC Output current: 0.5A Case: DIP8 Mounting: THT Topology: buck Number of channels: 1 Kind of package: tube |
на замовлення 263 шт: термін постачання 14-30 дні (днів) |
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LM2574N-ADJG | ONSEMI |
Category: Voltage regulators - DC/DC circuitsDescription: PMIC; DC/DC converter; Uin: 4.75÷40VDC; Uout: 1.23÷37VDC; 500mA Type of integrated circuit: PMIC Kind of integrated circuit: DC/DC converter Input voltage: 4.75...40V DC Output voltage: 1.23...37V DC Output current: 0.5A Case: DIP8 Mounting: THT Topology: buck Number of channels: 1 Kind of package: tube |
на замовлення 698 шт: термін постачання 14-30 дні (днів) |
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LM2574N-12G | ONSEMI |
Category: Voltage regulators - DC/DC circuitsDescription: PMIC; DC/DC converter; DIP8; THT; tube Type of integrated circuit: PMIC Kind of integrated circuit: DC/DC converter Case: DIP8 Mounting: THT Kind of package: tube |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||||||||||
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BD137G | ONSEMI |
Category: NPN THT transistorsDescription: Transistor: NPN; bipolar; 60V; 1.5A; 12W; TO225 Type of transistor: NPN Polarisation: bipolar Collector-emitter voltage: 60V Collector current: 1.5A Case: TO225 Mounting: THT Frequency: 50MHz Power dissipation: 12W Kind of package: bulk |
на замовлення 993 шт: термін постачання 14-30 дні (днів) |
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BZX79C5V6 | ONSEMI |
Category: THT Zener diodesDescription: Diode: Zener; 0.5W; 5.6V; bulk; CASE017AG; single diode; BZX79C Type of diode: Zener Power dissipation: 0.5W Zener voltage: 5.6V Case: CASE017AG Mounting: THT Tolerance: ±5% Semiconductor structure: single diode Kind of package: bulk Manufacturer series: BZX79C |
на замовлення 482 шт: термін постачання 14-30 дні (днів) |
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NTHL075N065SC1 | ONSEMI |
Category: THT N channel transistorsDescription: Transistor: N-MOSFET; SiC; unipolar; 650V; 26A; Idm: 120A; 74W Type of transistor: N-MOSFET Technology: SiC Polarisation: unipolar Drain-source voltage: 650V Drain current: 26A Power dissipation: 74W Case: TO247-3 Gate-source voltage: -5...18V Mounting: THT Gate charge: 61nC Kind of channel: enhancement Kind of package: tube Pulsed drain current: 120A On-state resistance: 68mΩ |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||||||||||
| NTH4L075N065SC1 | ONSEMI |
Category: THT N channel transistorsDescription: Transistor: N-MOSFET; SiC; unipolar; 650V; 26A; Idm: 120A; 74W Type of transistor: N-MOSFET Technology: SiC Polarisation: unipolar Drain-source voltage: 650V Drain current: 26A Power dissipation: 74W Case: TO247-4 Gate-source voltage: -5...18V Mounting: THT Gate charge: 61nC Kind of channel: enhancement Kind of package: tube Features of semiconductor devices: Kelvin terminal Pulsed drain current: 120A On-state resistance: 68mΩ |
товару немає в наявності |
В кошику од. на суму грн. | |||||||||||||||||
| NVBG075N065SC1 | ONSEMI |
Category: SMD N channel transistorsDescription: Transistor: N-MOSFET; SiC; N; 650V; 37A; 139W; D2PAK-7 Type of transistor: N-MOSFET Technology: SiC Polarisation: N Drain-source voltage: 650V Drain current: 37A Power dissipation: 139W Case: D2PAK-7 Gate-source voltage: -8...22V Mounting: SMD Gate charge: 59nC Kind of channel: enhancement Application: automotive industry |
на замовлення 800 шт: термін постачання 14-30 дні (днів) |
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| NXH040F120MNF1PG | ONSEMI |
Category: Transistor driversDescription: Module; transistor/transistor; 1.2kV; 30A; PIM22; Press-in PCB Type of semiconductor module: MOSFET transistor Semiconductor structure: transistor/transistor Drain-source voltage: 1.2kV Drain current: 30A Case: PIM22 Topology: H-bridge Electrical mounting: Press-in PCB On-state resistance: 61mΩ Pulsed drain current: 60A Power dissipation: 113W Technology: SiC Gate-source voltage: -15...25V Kind of package: in-tray Mechanical mounting: screw |
товару немає в наявності |
Мінімальне замовлення: 28 шт В кошику од. на суму грн. | |||||||||||||||||
| NXH040F120MNF1PTG | ONSEMI |
Category: Transistor driversDescription: Module; transistor/transistor; 1.2kV; 30A; PIM22; Press-in PCB Type of semiconductor module: MOSFET transistor Semiconductor structure: transistor/transistor Drain-source voltage: 1.2kV Drain current: 30A Case: PIM22 Topology: H-bridge Electrical mounting: Press-in PCB On-state resistance: 61mΩ Pulsed drain current: 60A Power dissipation: 113W Technology: SiC Gate-source voltage: -15...25V Kind of package: in-tray Mechanical mounting: screw |
товару немає в наявності |
Мінімальне замовлення: 28 шт В кошику од. на суму грн. | |||||||||||||||||
| NXH040P120MNF1PG | ONSEMI |
Category: Transistor driversDescription: Module; transistor/transistor; 1.2kV; 30A; PIM18; Press-in PCB Type of semiconductor module: MOSFET transistor Semiconductor structure: transistor/transistor Drain-source voltage: 1.2kV Drain current: 30A Case: PIM18 Topology: MOSFET half-bridge Electrical mounting: Press-in PCB On-state resistance: 61mΩ Pulsed drain current: 60A Power dissipation: 113W Technology: SiC Gate-source voltage: -15...25V Kind of package: in-tray Mechanical mounting: screw |
товару немає в наявності |
Мінімальне замовлення: 28 шт В кошику од. на суму грн. | |||||||||||||||||
|
MMBF5485 | ONSEMI |
Category: SMD N channel transistorsDescription: Transistor: N-JFET; unipolar; 4mA; 0.225W; SOT23; Igt: 10mA Kind of package: reel; tape Mounting: SMD Type of transistor: N-JFET Case: SOT23 Polarisation: unipolar Gate-source voltage: -25V Drain current: 4mA Gate current: 10mA Power dissipation: 0.225W |
на замовлення 2456 шт: термін постачання 14-30 дні (днів) |
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| SS35 | ONSEMI |
Category: SMD Schottky diodesDescription: Diode: Schottky rectifying; SMC; SMD; 50V; 3A; reel,tape Mounting: SMD Max. off-state voltage: 50V Load current: 3A Kind of package: reel; tape Semiconductor structure: single diode Case: SMC Type of diode: Schottky rectifying Max. forward impulse current: 100A Max. forward voltage: 0.75V |
товару немає в наявності |
В кошику од. на суму грн. | |||||||||||||||||
| 1SS351-TB-E | ONSEMI |
Category: SMD Schottky diodesDescription: Diode: Schottky switching; SC59; SMD; 5V; 30mA; reel,tape Mounting: SMD Max. off-state voltage: 5V Load current: 30mA Kind of package: reel; tape Semiconductor structure: double series Case: SC59 Capacitance: 0.9pF Type of diode: Schottky switching Max. forward voltage: 0.23V |
товару немає в наявності |
В кошику од. на суму грн. | |||||||||||||||||
| NSP4201MR6T1G | ONSEMI |
Category: Protection diodes - arraysDescription: Diode: TVS array; 6V; 500W; unidirectional; TSOP6; Ch: 4; reel,tape Mounting: SMD Peak pulse power dissipation: 0.5kW Application: automotive industry; USB Max. off-state voltage: 5V Kind of package: reel; tape Semiconductor structure: unidirectional Case: TSOP6 Type of diode: TVS array Number of channels: 4 Breakdown voltage: 6V |
товару немає в наявності |
В кошику од. на суму грн. | |||||||||||||||||
| SZNSP4201MR6T1G | ONSEMI |
Category: Protection diodes - arraysDescription: Diode: TVS array; 6V; unidirectional; TSOP6; Ch: 4; reel,tape Mounting: SMD Application: automotive industry Max. off-state voltage: 5V Kind of package: reel; tape Semiconductor structure: unidirectional Case: TSOP6 Type of diode: TVS array Number of channels: 4 Breakdown voltage: 6V |
товару немає в наявності |
В кошику од. на суму грн. | |||||||||||||||||
|
SZESD5Z3.3T1G | ONSEMI |
Category: Unidirectional TVS SMD diodesDescription: Diode: TVS; 5V; unidirectional; SOD523; automotive industry Type of diode: TVS Max. off-state voltage: 3.3V Breakdown voltage: 5V Semiconductor structure: unidirectional Case: SOD523 Mounting: SMD Application: automotive industry Kind of package: reel; tape |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||||||||||
|
MM74HC132M | ONSEMI |
Category: Gates, invertersDescription: IC: digital; NAND; Ch: 4; IN: 2; CMOS; SMD; SO14; 2÷6VDC; -40÷85°C; tube Type of integrated circuit: digital Mounting: SMD Supply voltage: 2...6V DC Kind of gate: NAND Operating temperature: -40...85°C Technology: CMOS Quiescent current: 20µA Kind of input: with Schmitt trigger Number of inputs: 2 Kind of package: tube Case: SO14 Family: HC Number of channels: quad; 4 |
на замовлення 94 шт: термін постачання 14-30 дні (днів) |
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|
MM74HC132MTC | ONSEMI |
Category: Gates, invertersDescription: IC: digital; NAND; Ch: 4; IN: 2; CMOS; SMD; TSSOP14; 2÷6VDC; -40÷85°C Type of integrated circuit: digital Mounting: SMD Delay time: 12ns Supply voltage: 2...6V DC Kind of gate: NAND Operating temperature: -40...85°C Technology: CMOS Kind of input: with Schmitt trigger Number of inputs: 2 Kind of package: tube Case: TSSOP14 Family: HC Number of channels: quad; 4 |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||||||||||
|
MM74HC132MTCX | ONSEMI |
Category: Gates, invertersDescription: IC: digital; NAND; Ch: 4; IN: 2; CMOS; SMD; TSSOP14; 2÷6VDC; -40÷85°C Type of integrated circuit: digital Mounting: SMD Delay time: 12ns Supply voltage: 2...6V DC Kind of gate: NAND Operating temperature: -40...85°C Technology: CMOS Kind of input: with Schmitt trigger Number of inputs: 2 Kind of package: reel; tape Case: TSSOP14 Family: HC Number of channels: quad; 4 |
товару немає в наявності |
Мінімальне замовлення: 2500 шт В кошику од. на суму грн. | ||||||||||||||||
|
MM74HC132MX | ONSEMI |
Category: Gates, invertersDescription: IC: digital; NAND; Ch: 4; IN: 2; CMOS; SMD; SO14; 2÷6VDC; -40÷85°C; 12ns Type of integrated circuit: digital Mounting: SMD Delay time: 12ns Supply voltage: 2...6V DC Kind of gate: NAND Operating temperature: -40...85°C Technology: CMOS Kind of input: with Schmitt trigger Number of inputs: 2 Kind of package: reel; tape Case: SO14 Family: HC Number of channels: quad; 4 |
товару немає в наявності |
Мінімальне замовлення: 2500 шт В кошику од. на суму грн. | ||||||||||||||||
|
MJE340G | ONSEMI |
Category: NPN THT transistorsDescription: Transistor: NPN; bipolar; 300V; 0.5A; 20W; TO225 Kind of package: bulk Power dissipation: 20W Polarisation: bipolar Type of transistor: NPN Current gain: 30...240 Case: TO225 Collector current: 0.5A Mounting: THT Collector-emitter voltage: 300V |
на замовлення 1333 шт: термін постачання 14-30 дні (днів) |
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|
MJE350G | ONSEMI |
Category: PNP THT transistorsDescription: Transistor: PNP; bipolar; 300V; 0.5A; 20W; TO225 Type of transistor: PNP Polarisation: bipolar Collector-emitter voltage: 300V Collector current: 0.5A Power dissipation: 20W Case: TO225 Current gain: 30...240 Mounting: THT Kind of package: bulk |
на замовлення 822 шт: термін постачання 14-30 дні (днів) |
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|
74VHC02MTCX | ONSEMI |
Category: Gates, invertersDescription: IC: digital; NOR; Ch: 4; IN: 2; SMD; TSSOP14; 2÷5.5VDC; -40÷85°C; 20uA Type of integrated circuit: digital Kind of gate: NOR Number of channels: quad; 4 Number of inputs: 2 Mounting: SMD Case: TSSOP14 Supply voltage: 2...5.5V DC Operating temperature: -40...85°C Kind of package: reel; tape Quiescent current: 20µA Family: VHC |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||||||||||
|
74VHC02M | ONSEMI |
Category: Gates, invertersDescription: IC: digital; NOR; Ch: 4; IN: 2; SMD; SO14; 2÷5.5VDC; -40÷85°C; tube Type of integrated circuit: digital Kind of gate: NOR Number of channels: quad; 4 Number of inputs: 2 Mounting: SMD Case: SO14 Supply voltage: 2...5.5V DC Operating temperature: -40...85°C Kind of package: tube Quiescent current: 20µA Family: VHC |
товару немає в наявності |
Мінімальне замовлення: 3 шт В кошику од. на суму грн. | ||||||||||||||||
|
74VHC02MX | ONSEMI |
Category: Gates, invertersDescription: IC: digital; NOR; Ch: 4; IN: 2; SMD; SO14; 2÷5.5VDC; -40÷85°C; 20uA; VHC Type of integrated circuit: digital Kind of gate: NOR Number of channels: quad; 4 Number of inputs: 2 Mounting: SMD Case: SO14 Supply voltage: 2...5.5V DC Operating temperature: -40...85°C Kind of package: reel; tape Quiescent current: 20µA Family: VHC |
товару немає в наявності |
Мінімальне замовлення: 2500 шт В кошику од. на суму грн. | ||||||||||||||||
| FGH40T120SQDNL4 | ONSEMI |
Category: THT IGBT transistorsDescription: Transistor: IGBT; 1.2kV; 40A; 227W; TO247-4 Type of transistor: IGBT Collector-emitter voltage: 1.2kV Collector current: 40A Power dissipation: 227W Case: TO247-4 Gate-emitter voltage: ±20V Pulsed collector current: 160A Mounting: THT Gate charge: 221nC Kind of package: tube Features of semiconductor devices: Kelvin terminal |
товару немає в наявності |
В кошику од. на суму грн. |
| MUN5311DW1T1G |
![]() |
Виробник: ONSEMI
Category: Complementary transistors
Description: Transistor: NPN / PNP; bipolar; BRT,complementary pair; 50V; 0.1A
Mounting: SMD
Kind of transistor: BRT; complementary pair
Type of transistor: NPN / PNP
Current gain: 60
Kind of package: reel; tape
Base-emitter resistor: 10kΩ
Case: SC70-6; SC88; SOT363
Collector current: 0.1A
Collector-emitter voltage: 50V
Base resistor: 10kΩ
Power dissipation: 0.385W
Polarisation: bipolar
Category: Complementary transistors
Description: Transistor: NPN / PNP; bipolar; BRT,complementary pair; 50V; 0.1A
Mounting: SMD
Kind of transistor: BRT; complementary pair
Type of transistor: NPN / PNP
Current gain: 60
Kind of package: reel; tape
Base-emitter resistor: 10kΩ
Case: SC70-6; SC88; SOT363
Collector current: 0.1A
Collector-emitter voltage: 50V
Base resistor: 10kΩ
Power dissipation: 0.385W
Polarisation: bipolar
на замовлення 255 шт:
термін постачання 14-30 дні (днів)
| Кількість | Ціна без ПДВ |
|---|---|
| 28+ | 15.96 грн |
| 40+ | 10.46 грн |
| 49+ | 8.50 грн |
| 58+ | 7.21 грн |
| 100+ | 6.13 грн |
| 250+ | 4.96 грн |
| MUN5313DW1T1G |
![]() |
Виробник: ONSEMI
Category: Complementary transistors
Description: Transistor: NPN / PNP; bipolar; BRT,complementary pair; 50V; 0.1A
Mounting: SMD
Kind of transistor: BRT; complementary pair
Type of transistor: NPN / PNP
Kind of package: reel; tape
Base-emitter resistor: 22kΩ
Case: SC70-6; SC88; SOT363
Collector current: 0.1A
Collector-emitter voltage: 50V
Base resistor: 47kΩ
Power dissipation: 0.187W
Polarisation: bipolar
Category: Complementary transistors
Description: Transistor: NPN / PNP; bipolar; BRT,complementary pair; 50V; 0.1A
Mounting: SMD
Kind of transistor: BRT; complementary pair
Type of transistor: NPN / PNP
Kind of package: reel; tape
Base-emitter resistor: 22kΩ
Case: SC70-6; SC88; SOT363
Collector current: 0.1A
Collector-emitter voltage: 50V
Base resistor: 47kΩ
Power dissipation: 0.187W
Polarisation: bipolar
на замовлення 218 шт:
термін постачання 14-30 дні (днів)
| Кількість | Ціна без ПДВ |
|---|---|
| 30+ | 15.08 грн |
| 42+ | 9.97 грн |
| 63+ | 6.62 грн |
| 100+ | 5.53 грн |
| SMUN5311DW1T1G |
![]() |
Виробник: ONSEMI
Category: Complementary transistors
Description: Transistor: NPN / PNP; bipolar; BRT,complementary pair; 50V; 0.1A
Mounting: SMD
Kind of transistor: BRT; complementary pair
Application: automotive industry
Type of transistor: NPN / PNP
Kind of package: reel; tape
Base-emitter resistor: 10kΩ
Case: SC70-6; SC88; SOT363
Collector current: 0.1A
Collector-emitter voltage: 50V
Base resistor: 10kΩ
Power dissipation: 0.25W
Polarisation: bipolar
Category: Complementary transistors
Description: Transistor: NPN / PNP; bipolar; BRT,complementary pair; 50V; 0.1A
Mounting: SMD
Kind of transistor: BRT; complementary pair
Application: automotive industry
Type of transistor: NPN / PNP
Kind of package: reel; tape
Base-emitter resistor: 10kΩ
Case: SC70-6; SC88; SOT363
Collector current: 0.1A
Collector-emitter voltage: 50V
Base resistor: 10kΩ
Power dissipation: 0.25W
Polarisation: bipolar
на замовлення 1883 шт:
термін постачання 14-30 дні (днів)
| Кількість | Ціна без ПДВ |
|---|---|
| 25+ | 17.74 грн |
| 33+ | 12.85 грн |
| 38+ | 11.12 грн |
| 54+ | 7.69 грн |
| 100+ | 6.56 грн |
| 500+ | 4.64 грн |
| 1000+ | 4.05 грн |
| 1500+ | 3.76 грн |
| SMUN5314DW1T1G |
![]() |
Виробник: ONSEMI
Category: Complementary transistors
Description: Transistor: NPN / PNP; bipolar; BRT,complementary pair; 50V; 0.1A
Mounting: SMD
Kind of transistor: BRT; complementary pair
Application: automotive industry
Type of transistor: NPN / PNP
Current gain: 80...140
Kind of package: reel; tape
Base-emitter resistor: 47kΩ
Case: SC70-6; SC88; SOT363
Collector current: 0.1A
Collector-emitter voltage: 50V
Base resistor: 10kΩ
Power dissipation: 0.25W
Polarisation: bipolar
Category: Complementary transistors
Description: Transistor: NPN / PNP; bipolar; BRT,complementary pair; 50V; 0.1A
Mounting: SMD
Kind of transistor: BRT; complementary pair
Application: automotive industry
Type of transistor: NPN / PNP
Current gain: 80...140
Kind of package: reel; tape
Base-emitter resistor: 47kΩ
Case: SC70-6; SC88; SOT363
Collector current: 0.1A
Collector-emitter voltage: 50V
Base resistor: 10kΩ
Power dissipation: 0.25W
Polarisation: bipolar
на замовлення 253 шт:
термін постачання 14-30 дні (днів)
| Кількість | Ціна без ПДВ |
|---|---|
| 27+ | 16.85 грн |
| 38+ | 10.87 грн |
| 44+ | 9.39 грн |
| 100+ | 8.32 грн |
| MUN5312DW1T1G |
![]() |
Виробник: ONSEMI
Category: Complementary transistors
Description: Transistor: NPN / PNP; bipolar; BRT,complementary pair; 50V; 0.1A
Mounting: SMD
Kind of transistor: BRT; complementary pair
Type of transistor: NPN / PNP
Current gain: 100
Kind of package: reel; tape
Base-emitter resistor: 22kΩ
Case: SC70-6; SC88; SOT363
Collector current: 0.1A
Collector-emitter voltage: 50V
Base resistor: 22kΩ
Power dissipation: 0.385W
Polarisation: bipolar
Category: Complementary transistors
Description: Transistor: NPN / PNP; bipolar; BRT,complementary pair; 50V; 0.1A
Mounting: SMD
Kind of transistor: BRT; complementary pair
Type of transistor: NPN / PNP
Current gain: 100
Kind of package: reel; tape
Base-emitter resistor: 22kΩ
Case: SC70-6; SC88; SOT363
Collector current: 0.1A
Collector-emitter voltage: 50V
Base resistor: 22kΩ
Power dissipation: 0.385W
Polarisation: bipolar
на замовлення 2850 шт:
термін постачання 14-30 дні (днів)
| Кількість | Ціна без ПДВ |
|---|---|
| 46+ | 9.76 грн |
| 63+ | 6.59 грн |
| 73+ | 5.70 грн |
| 100+ | 4.74 грн |
| 250+ | 4.31 грн |
| 500+ | 3.91 грн |
| 1000+ | 3.42 грн |
| MUN5315DW1T1G |
![]() |
Виробник: ONSEMI
Category: Complementary transistors
Description: Transistor: NPN / PNP; bipolar; BRT,complementary pair; 50V; 10kΩ
Mounting: SMD
Kind of transistor: BRT; complementary pair
Type of transistor: NPN / PNP
Current gain: 160...350
Kind of package: reel; tape
Case: SC70-6; SC88; SOT363
Collector current: 0.1A
Manufacturer standard package: 3000pcs.
Collector-emitter voltage: 50V
Base resistor: 10kΩ
Power dissipation: 0.385W
Polarisation: bipolar
Category: Complementary transistors
Description: Transistor: NPN / PNP; bipolar; BRT,complementary pair; 50V; 10kΩ
Mounting: SMD
Kind of transistor: BRT; complementary pair
Type of transistor: NPN / PNP
Current gain: 160...350
Kind of package: reel; tape
Case: SC70-6; SC88; SOT363
Collector current: 0.1A
Manufacturer standard package: 3000pcs.
Collector-emitter voltage: 50V
Base resistor: 10kΩ
Power dissipation: 0.385W
Polarisation: bipolar
товару немає в наявності
В кошику
од. на суму грн.
| MUN5311DW1T2G |
![]() |
Виробник: ONSEMI
Category: Complementary transistors
Description: Transistor: NPN / PNP; bipolar; BRT,complementary pair; 50V; 0.1A
Mounting: SMD
Kind of transistor: BRT; complementary pair
Type of transistor: NPN / PNP
Current gain: 60
Kind of package: reel; tape
Base-emitter resistor: 10kΩ
Case: SC70-6; SC88; SOT363
Collector current: 0.1A
Collector-emitter voltage: 50V
Base resistor: 10kΩ
Power dissipation: 0.385W
Polarisation: bipolar
Category: Complementary transistors
Description: Transistor: NPN / PNP; bipolar; BRT,complementary pair; 50V; 0.1A
Mounting: SMD
Kind of transistor: BRT; complementary pair
Type of transistor: NPN / PNP
Current gain: 60
Kind of package: reel; tape
Base-emitter resistor: 10kΩ
Case: SC70-6; SC88; SOT363
Collector current: 0.1A
Collector-emitter voltage: 50V
Base resistor: 10kΩ
Power dissipation: 0.385W
Polarisation: bipolar
товару немає в наявності
В кошику
од. на суму грн.
| MUN5312DW1T2G |
![]() |
Виробник: ONSEMI
Category: Complementary transistors
Description: Transistor: NPN / PNP; bipolar; BRT,complementary pair; 50V; 0.1A
Mounting: SMD
Kind of transistor: BRT; complementary pair
Type of transistor: NPN / PNP
Current gain: 100
Kind of package: reel; tape
Base-emitter resistor: 22kΩ
Case: SC70-6; SC88; SOT363
Collector current: 0.1A
Collector-emitter voltage: 50V
Base resistor: 22kΩ
Power dissipation: 0.385W
Polarisation: bipolar
Category: Complementary transistors
Description: Transistor: NPN / PNP; bipolar; BRT,complementary pair; 50V; 0.1A
Mounting: SMD
Kind of transistor: BRT; complementary pair
Type of transistor: NPN / PNP
Current gain: 100
Kind of package: reel; tape
Base-emitter resistor: 22kΩ
Case: SC70-6; SC88; SOT363
Collector current: 0.1A
Collector-emitter voltage: 50V
Base resistor: 22kΩ
Power dissipation: 0.385W
Polarisation: bipolar
товару немає в наявності
В кошику
од. на суму грн.
| MUN5316DW1T1G |
![]() |
Виробник: ONSEMI
Category: Complementary transistors
Description: Transistor: NPN / PNP; bipolar; BRT,complementary pair; 50V; 0.1A
Mounting: SMD
Kind of transistor: BRT; complementary pair
Type of transistor: NPN / PNP
Current gain: 160...350
Kind of package: reel; tape
Case: SC70-6; SC88; SOT363
Collector current: 0.1A
Collector-emitter voltage: 50V
Base resistor: 4.7kΩ
Power dissipation: 0.25W
Polarisation: bipolar
Category: Complementary transistors
Description: Transistor: NPN / PNP; bipolar; BRT,complementary pair; 50V; 0.1A
Mounting: SMD
Kind of transistor: BRT; complementary pair
Type of transistor: NPN / PNP
Current gain: 160...350
Kind of package: reel; tape
Case: SC70-6; SC88; SOT363
Collector current: 0.1A
Collector-emitter voltage: 50V
Base resistor: 4.7kΩ
Power dissipation: 0.25W
Polarisation: bipolar
товару немає в наявності
В кошику
од. на суму грн.
| SMUN5312DW1T1G |
![]() |
Виробник: ONSEMI
Category: Complementary transistors
Description: Transistor: NPN / PNP; bipolar; BRT,complementary pair; 50V; 0.1A
Mounting: SMD
Kind of transistor: BRT; complementary pair
Application: automotive industry
Type of transistor: NPN / PNP
Kind of package: reel; tape
Base-emitter resistor: 22kΩ
Case: SC70-6; SC88; SOT363
Collector current: 0.1A
Collector-emitter voltage: 50V
Base resistor: 22kΩ
Power dissipation: 0.25W
Polarisation: bipolar
Category: Complementary transistors
Description: Transistor: NPN / PNP; bipolar; BRT,complementary pair; 50V; 0.1A
Mounting: SMD
Kind of transistor: BRT; complementary pair
Application: automotive industry
Type of transistor: NPN / PNP
Kind of package: reel; tape
Base-emitter resistor: 22kΩ
Case: SC70-6; SC88; SOT363
Collector current: 0.1A
Collector-emitter voltage: 50V
Base resistor: 22kΩ
Power dissipation: 0.25W
Polarisation: bipolar
товару немає в наявності
В кошику
од. на суму грн.
| SMUN5311DW1T2G |
![]() |
Виробник: ONSEMI
Category: Complementary transistors
Description: Transistor: NPN / PNP; bipolar; BRT,complementary pair; 50V; 0.1A
Mounting: SMD
Kind of transistor: BRT; complementary pair
Application: automotive industry
Type of transistor: NPN / PNP
Kind of package: reel; tape
Base-emitter resistor: 10kΩ
Case: SC70-6; SC88; SOT363
Collector current: 0.1A
Collector-emitter voltage: 50V
Base resistor: 10kΩ
Power dissipation: 0.25W
Polarisation: bipolar
Category: Complementary transistors
Description: Transistor: NPN / PNP; bipolar; BRT,complementary pair; 50V; 0.1A
Mounting: SMD
Kind of transistor: BRT; complementary pair
Application: automotive industry
Type of transistor: NPN / PNP
Kind of package: reel; tape
Base-emitter resistor: 10kΩ
Case: SC70-6; SC88; SOT363
Collector current: 0.1A
Collector-emitter voltage: 50V
Base resistor: 10kΩ
Power dissipation: 0.25W
Polarisation: bipolar
товару немає в наявності
В кошику
од. на суму грн.
| SMUN5311DW1T3G |
![]() |
Виробник: ONSEMI
Category: Complementary transistors
Description: Transistor: NPN / PNP; bipolar; BRT,complementary pair; 50V; 0.1A
Mounting: SMD
Kind of transistor: BRT; complementary pair
Application: automotive industry
Type of transistor: NPN / PNP
Kind of package: reel; tape
Base-emitter resistor: 10kΩ
Case: SC70-6; SC88; SOT363
Collector current: 0.1A
Collector-emitter voltage: 50V
Base resistor: 10kΩ
Power dissipation: 0.25W
Polarisation: bipolar
Category: Complementary transistors
Description: Transistor: NPN / PNP; bipolar; BRT,complementary pair; 50V; 0.1A
Mounting: SMD
Kind of transistor: BRT; complementary pair
Application: automotive industry
Type of transistor: NPN / PNP
Kind of package: reel; tape
Base-emitter resistor: 10kΩ
Case: SC70-6; SC88; SOT363
Collector current: 0.1A
Collector-emitter voltage: 50V
Base resistor: 10kΩ
Power dissipation: 0.25W
Polarisation: bipolar
товару немає в наявності
Мінімальне замовлення: 10000 шт
В кошику
од. на суму грн.
| SMUN5313DW1T1G |
![]() |
Виробник: ONSEMI
Category: Complementary transistors
Description: Transistor: NPN / PNP; bipolar; BRT,complementary pair; 50V; 0.1A
Mounting: SMD
Kind of transistor: BRT; complementary pair
Application: automotive industry
Type of transistor: NPN / PNP
Kind of package: reel; tape
Base-emitter resistor: 47kΩ
Case: SC70-6; SC88; SOT363
Collector current: 0.1A
Collector-emitter voltage: 50V
Base resistor: 47kΩ
Power dissipation: 0.25W
Polarisation: bipolar
Category: Complementary transistors
Description: Transistor: NPN / PNP; bipolar; BRT,complementary pair; 50V; 0.1A
Mounting: SMD
Kind of transistor: BRT; complementary pair
Application: automotive industry
Type of transistor: NPN / PNP
Kind of package: reel; tape
Base-emitter resistor: 47kΩ
Case: SC70-6; SC88; SOT363
Collector current: 0.1A
Collector-emitter voltage: 50V
Base resistor: 47kΩ
Power dissipation: 0.25W
Polarisation: bipolar
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| SMUN5313DW1T3G |
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Виробник: ONSEMI
Category: Complementary transistors
Description: Transistor: NPN / PNP; bipolar; BRT,complementary pair; 50V; 0.1A
Mounting: SMD
Kind of transistor: BRT; complementary pair
Application: automotive industry
Type of transistor: NPN / PNP
Kind of package: reel; tape
Base-emitter resistor: 47kΩ
Case: SC70-6; SC88; SOT363
Collector current: 0.1A
Collector-emitter voltage: 50V
Base resistor: 47kΩ
Power dissipation: 0.25W
Polarisation: bipolar
Category: Complementary transistors
Description: Transistor: NPN / PNP; bipolar; BRT,complementary pair; 50V; 0.1A
Mounting: SMD
Kind of transistor: BRT; complementary pair
Application: automotive industry
Type of transistor: NPN / PNP
Kind of package: reel; tape
Base-emitter resistor: 47kΩ
Case: SC70-6; SC88; SOT363
Collector current: 0.1A
Collector-emitter voltage: 50V
Base resistor: 47kΩ
Power dissipation: 0.25W
Polarisation: bipolar
товару немає в наявності
Мінімальне замовлення: 10000 шт
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| SMUN5315DW1T1G |
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Виробник: ONSEMI
Category: Complementary transistors
Description: Transistor: NPN / PNP; bipolar; BRT,complementary pair; 50V; 10kΩ
Mounting: SMD
Kind of transistor: BRT; complementary pair
Application: automotive industry
Type of transistor: NPN / PNP
Current gain: 160...350
Kind of package: reel; tape
Case: SC70-6; SC88; SOT363
Collector current: 0.1A
Manufacturer standard package: 3000pcs.
Collector-emitter voltage: 50V
Base resistor: 10kΩ
Power dissipation: 0.385W
Polarisation: bipolar
Category: Complementary transistors
Description: Transistor: NPN / PNP; bipolar; BRT,complementary pair; 50V; 10kΩ
Mounting: SMD
Kind of transistor: BRT; complementary pair
Application: automotive industry
Type of transistor: NPN / PNP
Current gain: 160...350
Kind of package: reel; tape
Case: SC70-6; SC88; SOT363
Collector current: 0.1A
Manufacturer standard package: 3000pcs.
Collector-emitter voltage: 50V
Base resistor: 10kΩ
Power dissipation: 0.385W
Polarisation: bipolar
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| NSVMUN531335DW1T1G |
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Виробник: ONSEMI
Category: Complementary transistors
Description: Transistor: NPN / PNP; bipolar; BRT,complementary pair; 50V
Mounting: SMD
Kind of transistor: BRT; complementary pair
Application: automotive industry
Type of transistor: NPN / PNP
Current gain: 80...140
Kind of package: reel; tape
Base-emitter resistor: 47kΩ
Case: SC70-6; SC88; SOT363
Collector current: 0.1A
Manufacturer standard package: 3000pcs.
Collector-emitter voltage: 50V
Base resistor: 2.2/47kΩ
Power dissipation: 0.385W
Polarisation: bipolar
Category: Complementary transistors
Description: Transistor: NPN / PNP; bipolar; BRT,complementary pair; 50V
Mounting: SMD
Kind of transistor: BRT; complementary pair
Application: automotive industry
Type of transistor: NPN / PNP
Current gain: 80...140
Kind of package: reel; tape
Base-emitter resistor: 47kΩ
Case: SC70-6; SC88; SOT363
Collector current: 0.1A
Manufacturer standard package: 3000pcs.
Collector-emitter voltage: 50V
Base resistor: 2.2/47kΩ
Power dissipation: 0.385W
Polarisation: bipolar
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| NSVMUN5312DW1T2G |
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Виробник: ONSEMI
Category: Complementary transistors
Description: Transistor: NPN / PNP; bipolar; BRT,complementary pair; 50V
Mounting: SMD
Kind of transistor: BRT; complementary pair
Application: automotive industry
Type of transistor: NPN / PNP
Current gain: 60...100
Kind of package: reel; tape
Base-emitter resistor: 22kΩ
Case: SC70-6; SC88; SOT363
Collector current: 0.1A
Manufacturer standard package: 3000pcs.
Collector-emitter voltage: 50V
Base resistor: 22kΩ
Power dissipation: 0.385W
Polarisation: bipolar
Category: Complementary transistors
Description: Transistor: NPN / PNP; bipolar; BRT,complementary pair; 50V
Mounting: SMD
Kind of transistor: BRT; complementary pair
Application: automotive industry
Type of transistor: NPN / PNP
Current gain: 60...100
Kind of package: reel; tape
Base-emitter resistor: 22kΩ
Case: SC70-6; SC88; SOT363
Collector current: 0.1A
Manufacturer standard package: 3000pcs.
Collector-emitter voltage: 50V
Base resistor: 22kΩ
Power dissipation: 0.385W
Polarisation: bipolar
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| NSVMUN5316DW1T1G |
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Виробник: ONSEMI
Category: Complementary transistors
Description: Transistor: NPN / PNP; bipolar; BRT,complementary pair; 50V
Mounting: SMD
Kind of transistor: BRT; complementary pair
Application: automotive industry
Type of transistor: NPN / PNP
Current gain: 160...350
Kind of package: reel; tape
Case: SC70-6; SC88; SOT363
Collector current: 0.1A
Manufacturer standard package: 3000pcs.
Collector-emitter voltage: 50V
Base resistor: 4.7kΩ
Power dissipation: 0.385W
Polarisation: bipolar
Category: Complementary transistors
Description: Transistor: NPN / PNP; bipolar; BRT,complementary pair; 50V
Mounting: SMD
Kind of transistor: BRT; complementary pair
Application: automotive industry
Type of transistor: NPN / PNP
Current gain: 160...350
Kind of package: reel; tape
Case: SC70-6; SC88; SOT363
Collector current: 0.1A
Manufacturer standard package: 3000pcs.
Collector-emitter voltage: 50V
Base resistor: 4.7kΩ
Power dissipation: 0.385W
Polarisation: bipolar
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| BZX85C10 |
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Виробник: ONSEMI
Category: THT Zener diodes
Description: Diode: Zener; 1.3W; 10V; bulk; DO41; single diode; BZX85C
Tolerance: ±5%
Mounting: THT
Manufacturer series: BZX85C
Power dissipation: 1.3W
Kind of package: bulk
Semiconductor structure: single diode
Case: DO41
Zener voltage: 10V
Type of diode: Zener
Category: THT Zener diodes
Description: Diode: Zener; 1.3W; 10V; bulk; DO41; single diode; BZX85C
Tolerance: ±5%
Mounting: THT
Manufacturer series: BZX85C
Power dissipation: 1.3W
Kind of package: bulk
Semiconductor structure: single diode
Case: DO41
Zener voltage: 10V
Type of diode: Zener
на замовлення 1206 шт:
термін постачання 14-30 дні (днів)
| Кількість | Ціна без ПДВ |
|---|---|
| 42+ | 10.64 грн |
| 53+ | 7.91 грн |
| 61+ | 6.75 грн |
| 125+ | 3.31 грн |
| 250+ | 3.01 грн |
| 500+ | 2.87 грн |
| 1000+ | 2.75 грн |
| BZX85C10-T50R |
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Виробник: ONSEMI
Category: THT Zener diodes
Description: Diode: Zener; 1.3W; 10V; reel,tape; DO41; single diode; BZX85C
Type of diode: Zener
Power dissipation: 1.3W
Zener voltage: 10V
Kind of package: reel; tape
Case: DO41
Mounting: THT
Tolerance: ±5%
Semiconductor structure: single diode
Manufacturer series: BZX85C
Category: THT Zener diodes
Description: Diode: Zener; 1.3W; 10V; reel,tape; DO41; single diode; BZX85C
Type of diode: Zener
Power dissipation: 1.3W
Zener voltage: 10V
Kind of package: reel; tape
Case: DO41
Mounting: THT
Tolerance: ±5%
Semiconductor structure: single diode
Manufacturer series: BZX85C
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| NTH4L040N120SC1 |
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Виробник: ONSEMI
Category: THT N channel transistors
Description: Transistor: N-MOSFET; SiC; unipolar; 1.2kV; 41A; Idm: 232A; 160W
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 1.2kV
Drain current: 41A
Pulsed drain current: 232A
Power dissipation: 160W
Case: TO247-4
Gate-source voltage: -15...25V
On-state resistance: 56mΩ
Mounting: THT
Gate charge: 106nC
Kind of package: tube
Kind of channel: enhancement
Features of semiconductor devices: Kelvin terminal
Technology: SiC
Category: THT N channel transistors
Description: Transistor: N-MOSFET; SiC; unipolar; 1.2kV; 41A; Idm: 232A; 160W
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 1.2kV
Drain current: 41A
Pulsed drain current: 232A
Power dissipation: 160W
Case: TO247-4
Gate-source voltage: -15...25V
On-state resistance: 56mΩ
Mounting: THT
Gate charge: 106nC
Kind of package: tube
Kind of channel: enhancement
Features of semiconductor devices: Kelvin terminal
Technology: SiC
на замовлення 126 шт:
термін постачання 14-30 дні (днів)
| Кількість | Ціна без ПДВ |
|---|---|
| 1+ | 1330.40 грн |
| LM2575T-5G |
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Виробник: ONSEMI
Category: Voltage regulators - DC/DC circuits
Description: PMIC; DC/DC converter; Uin: 4.75÷40VDC; Uout: 5VDC; 1A; TO220-5; THT
Type of integrated circuit: PMIC
Kind of integrated circuit: DC/DC converter
Input voltage: 4.75...40V DC
Output voltage: 5V DC
Output current: 1A
Case: TO220-5
Mounting: THT
Frequency: 42...63kHz
Topology: buck
Number of channels: 1
Operating temperature: -40...125°C
Kind of package: tube
Category: Voltage regulators - DC/DC circuits
Description: PMIC; DC/DC converter; Uin: 4.75÷40VDC; Uout: 5VDC; 1A; TO220-5; THT
Type of integrated circuit: PMIC
Kind of integrated circuit: DC/DC converter
Input voltage: 4.75...40V DC
Output voltage: 5V DC
Output current: 1A
Case: TO220-5
Mounting: THT
Frequency: 42...63kHz
Topology: buck
Number of channels: 1
Operating temperature: -40...125°C
Kind of package: tube
на замовлення 37 шт:
термін постачання 14-30 дні (днів)
| Кількість | Ціна без ПДВ |
|---|---|
| 4+ | 147.23 грн |
| 10+ | 102.95 грн |
| LM2575T-ADJG |
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Виробник: ONSEMI
Category: Voltage regulators - DC/DC circuits
Description: PMIC; DC/DC converter; Uin: 4.75÷40VDC; Uout: 1.23÷37VDC; 1A; THT
Type of integrated circuit: PMIC
Kind of integrated circuit: DC/DC converter
Input voltage: 4.75...40V DC
Output voltage: 1.23...37V DC
Output current: 1A
Case: TO220-5
Mounting: THT
Frequency: 42...63kHz
Topology: buck
Number of channels: 1
Operating temperature: -40...125°C
Kind of package: tube
Category: Voltage regulators - DC/DC circuits
Description: PMIC; DC/DC converter; Uin: 4.75÷40VDC; Uout: 1.23÷37VDC; 1A; THT
Type of integrated circuit: PMIC
Kind of integrated circuit: DC/DC converter
Input voltage: 4.75...40V DC
Output voltage: 1.23...37V DC
Output current: 1A
Case: TO220-5
Mounting: THT
Frequency: 42...63kHz
Topology: buck
Number of channels: 1
Operating temperature: -40...125°C
Kind of package: tube
на замовлення 361 шт:
термін постачання 14-30 дні (днів)
| Кількість | Ціна без ПДВ |
|---|---|
| 4+ | 119.74 грн |
| 5+ | 101.30 грн |
| LM2575D2T-5G |
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Виробник: ONSEMI
Category: Voltage regulators - DC/DC circuits
Description: PMIC; DC/DC converter; D2PAK-5; SMD; tube
Type of integrated circuit: PMIC
Kind of integrated circuit: DC/DC converter
Case: D2PAK-5
Mounting: SMD
Kind of package: tube
Category: Voltage regulators - DC/DC circuits
Description: PMIC; DC/DC converter; D2PAK-5; SMD; tube
Type of integrated circuit: PMIC
Kind of integrated circuit: DC/DC converter
Case: D2PAK-5
Mounting: SMD
Kind of package: tube
на замовлення 38 шт:
термін постачання 14-30 дні (днів)
| Кількість | Ціна без ПДВ |
|---|---|
| 4+ | 133.93 грн |
| 10+ | 99.65 грн |
| DF08S |
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Виробник: ONSEMI
Category: SMD/THT sing. phase diode bridge rectif.
Description: Bridge rectifier: single-phase; 800V; If: 1.5A; Ifsm: 50A; SDIP 4L
Type of bridge rectifier: single-phase
Max. off-state voltage: 0.8kV
Load current: 1.5A
Max. forward impulse current: 50A
Case: SDIP 4L
Kind of package: reel; tape
Electrical mounting: SMT
Category: SMD/THT sing. phase diode bridge rectif.
Description: Bridge rectifier: single-phase; 800V; If: 1.5A; Ifsm: 50A; SDIP 4L
Type of bridge rectifier: single-phase
Max. off-state voltage: 0.8kV
Load current: 1.5A
Max. forward impulse current: 50A
Case: SDIP 4L
Kind of package: reel; tape
Electrical mounting: SMT
на замовлення 3478 шт:
термін постачання 14-30 дні (днів)
| Кількість | Ціна без ПДВ |
|---|---|
| 7+ | 65.63 грн |
| 11+ | 38.54 грн |
| 50+ | 29.48 грн |
| 100+ | 26.19 грн |
| 200+ | 23.14 грн |
| 500+ | 19.52 грн |
| 1000+ | 18.04 грн |
| NSV9435T1G |
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Виробник: ONSEMI
Category: PNP SMD transistors
Description: Transistor: PNP; bipolar; BRT; 300mV; 3A; 720mW; SOT223; 10kΩ
Application: automotive industry
Kind of transistor: BRT
Kind of package: reel; tape
Mounting: SMD
Type of transistor: PNP
Case: SOT223
Collector-emitter voltage: 300mV
Power dissipation: 0.72W
Collector current: 3A
Quantity in set/package: 1000pcs.
Pulsed collector current: 5A
Current gain: 220
Base resistor: 10kΩ
Frequency: 110MHz
Polarisation: bipolar
Category: PNP SMD transistors
Description: Transistor: PNP; bipolar; BRT; 300mV; 3A; 720mW; SOT223; 10kΩ
Application: automotive industry
Kind of transistor: BRT
Kind of package: reel; tape
Mounting: SMD
Type of transistor: PNP
Case: SOT223
Collector-emitter voltage: 300mV
Power dissipation: 0.72W
Collector current: 3A
Quantity in set/package: 1000pcs.
Pulsed collector current: 5A
Current gain: 220
Base resistor: 10kΩ
Frequency: 110MHz
Polarisation: bipolar
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| DTA123EET1G |
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Виробник: ONSEMI
Category: PNP SMD transistors
Description: Transistor: PNP; bipolar; BRT; 50V; 100mA; 300mW; SC75,SOT416
Type of transistor: PNP
Polarisation: bipolar
Kind of transistor: BRT
Collector-emitter voltage: 50V
Collector current: 0.1A
Power dissipation: 0.3W
Case: SC75; SOT416
Mounting: SMD
Kind of package: reel; tape
Base resistor: 2.2kΩ
Base-emitter resistor: 2.2kΩ
Current gain: 8...15
Quantity in set/package: 3000pcs.
Category: PNP SMD transistors
Description: Transistor: PNP; bipolar; BRT; 50V; 100mA; 300mW; SC75,SOT416
Type of transistor: PNP
Polarisation: bipolar
Kind of transistor: BRT
Collector-emitter voltage: 50V
Collector current: 0.1A
Power dissipation: 0.3W
Case: SC75; SOT416
Mounting: SMD
Kind of package: reel; tape
Base resistor: 2.2kΩ
Base-emitter resistor: 2.2kΩ
Current gain: 8...15
Quantity in set/package: 3000pcs.
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| DTA123EM3T5G |
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Виробник: ONSEMI
Category: PNP SMD transistors
Description: Transistor: PNP; bipolar; BRT; 50V; 100mA; 600mW; SOT723; R1: 2.2kΩ
Type of transistor: PNP
Polarisation: bipolar
Kind of transistor: BRT
Collector-emitter voltage: 50V
Collector current: 0.1A
Power dissipation: 0.6W
Case: SOT723
Mounting: SMD
Kind of package: reel; tape
Base resistor: 2.2kΩ
Base-emitter resistor: 2.2kΩ
Current gain: 8...15
Quantity in set/package: 8000pcs.
Category: PNP SMD transistors
Description: Transistor: PNP; bipolar; BRT; 50V; 100mA; 600mW; SOT723; R1: 2.2kΩ
Type of transistor: PNP
Polarisation: bipolar
Kind of transistor: BRT
Collector-emitter voltage: 50V
Collector current: 0.1A
Power dissipation: 0.6W
Case: SOT723
Mounting: SMD
Kind of package: reel; tape
Base resistor: 2.2kΩ
Base-emitter resistor: 2.2kΩ
Current gain: 8...15
Quantity in set/package: 8000pcs.
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| DTA123JET1G |
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Виробник: ONSEMI
Category: PNP SMD transistors
Description: Transistor: PNP; bipolar; BRT; 50V; 100mA; 300mW; SC75,SOT416
Type of transistor: PNP
Polarisation: bipolar
Kind of transistor: BRT
Collector-emitter voltage: 50V
Collector current: 0.1A
Power dissipation: 0.3W
Case: SC75; SOT416
Current gain: 80...140
Mounting: SMD
Quantity in set/package: 3000pcs.
Kind of package: reel; tape
Base resistor: 2.2kΩ
Base-emitter resistor: 47kΩ
Category: PNP SMD transistors
Description: Transistor: PNP; bipolar; BRT; 50V; 100mA; 300mW; SC75,SOT416
Type of transistor: PNP
Polarisation: bipolar
Kind of transistor: BRT
Collector-emitter voltage: 50V
Collector current: 0.1A
Power dissipation: 0.3W
Case: SC75; SOT416
Current gain: 80...140
Mounting: SMD
Quantity in set/package: 3000pcs.
Kind of package: reel; tape
Base resistor: 2.2kΩ
Base-emitter resistor: 47kΩ
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| FDD5N50NZTM |
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Виробник: ONSEMI
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 500V; 4A; Idm: 16A; 62W; DPAK
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 500V
Drain current: 4A
Pulsed drain current: 16A
Power dissipation: 62W
Case: DPAK
Gate-source voltage: ±25V
On-state resistance: 1.5Ω
Mounting: SMD
Gate charge: 9nC
Kind of package: reel; tape
Kind of channel: enhancement
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 500V; 4A; Idm: 16A; 62W; DPAK
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 500V
Drain current: 4A
Pulsed drain current: 16A
Power dissipation: 62W
Case: DPAK
Gate-source voltage: ±25V
On-state resistance: 1.5Ω
Mounting: SMD
Gate charge: 9nC
Kind of package: reel; tape
Kind of channel: enhancement
товару немає в наявності
Мінімальне замовлення: 2500 шт
В кошику
од. на суму грн.
| FQU5N50CTU-WS |
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Виробник: ONSEMI
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 500V; 2.4A; Idm: 16A; 48W; IPAK
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 500V
Drain current: 2.4A
Pulsed drain current: 16A
Power dissipation: 48W
Case: IPAK
Gate-source voltage: ±30V
On-state resistance: 1.4Ω
Mounting: THT
Gate charge: 24nC
Kind of package: tube
Kind of channel: enhancement
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 500V; 2.4A; Idm: 16A; 48W; IPAK
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 500V
Drain current: 2.4A
Pulsed drain current: 16A
Power dissipation: 48W
Case: IPAK
Gate-source voltage: ±30V
On-state resistance: 1.4Ω
Mounting: THT
Gate charge: 24nC
Kind of package: tube
Kind of channel: enhancement
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| FDH45N50F-F133 |
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Виробник: ONSEMI
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 500V; 45A; Idm: 180A; 625W; TO247-3
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 500V
Drain current: 45A
Pulsed drain current: 180A
Power dissipation: 625W
Case: TO247-3
Gate-source voltage: ±30V
On-state resistance: 0.12Ω
Mounting: THT
Gate charge: 105nC
Kind of package: tube
Kind of channel: enhancement
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 500V; 45A; Idm: 180A; 625W; TO247-3
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 500V
Drain current: 45A
Pulsed drain current: 180A
Power dissipation: 625W
Case: TO247-3
Gate-source voltage: ±30V
On-state resistance: 0.12Ω
Mounting: THT
Gate charge: 105nC
Kind of package: tube
Kind of channel: enhancement
на замовлення 415 шт:
термін постачання 14-30 дні (днів)
| Кількість | Ціна без ПДВ |
|---|---|
| 1+ | 491.36 грн |
| 5+ | 373.91 грн |
| 10+ | 332.73 грн |
| 30+ | 308.84 грн |
| FQPF5N50CYDTU |
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Виробник: ONSEMI
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 500V; 2.9A; Idm: 20A; 38W; TO220FP
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 500V
Drain current: 2.9A
Pulsed drain current: 20A
Power dissipation: 38W
Case: TO220FP
Gate-source voltage: ±30V
On-state resistance: 1.4Ω
Mounting: THT
Gate charge: 24nC
Kind of package: tube
Kind of channel: enhancement
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 500V; 2.9A; Idm: 20A; 38W; TO220FP
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 500V
Drain current: 2.9A
Pulsed drain current: 20A
Power dissipation: 38W
Case: TO220FP
Gate-source voltage: ±30V
On-state resistance: 1.4Ω
Mounting: THT
Gate charge: 24nC
Kind of package: tube
Kind of channel: enhancement
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од. на суму грн.
| LM2574N-5G |
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Виробник: ONSEMI
Category: Voltage regulators - DC/DC circuits
Description: PMIC; DC/DC converter; Uin: 4.75÷40VDC; Uout: 5VDC; 500mA; DIP8; THT
Type of integrated circuit: PMIC
Kind of integrated circuit: DC/DC converter
Input voltage: 4.75...40V DC
Output voltage: 5V DC
Output current: 0.5A
Case: DIP8
Mounting: THT
Topology: buck
Number of channels: 1
Kind of package: tube
Category: Voltage regulators - DC/DC circuits
Description: PMIC; DC/DC converter; Uin: 4.75÷40VDC; Uout: 5VDC; 500mA; DIP8; THT
Type of integrated circuit: PMIC
Kind of integrated circuit: DC/DC converter
Input voltage: 4.75...40V DC
Output voltage: 5V DC
Output current: 0.5A
Case: DIP8
Mounting: THT
Topology: buck
Number of channels: 1
Kind of package: tube
на замовлення 263 шт:
термін постачання 14-30 дні (днів)
| Кількість | Ціна без ПДВ |
|---|---|
| 4+ | 110.87 грн |
| 10+ | 75.77 грн |
| 50+ | 65.06 грн |
| 100+ | 62.59 грн |
| 250+ | 58.47 грн |
| LM2574N-ADJG |
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Виробник: ONSEMI
Category: Voltage regulators - DC/DC circuits
Description: PMIC; DC/DC converter; Uin: 4.75÷40VDC; Uout: 1.23÷37VDC; 500mA
Type of integrated circuit: PMIC
Kind of integrated circuit: DC/DC converter
Input voltage: 4.75...40V DC
Output voltage: 1.23...37V DC
Output current: 0.5A
Case: DIP8
Mounting: THT
Topology: buck
Number of channels: 1
Kind of package: tube
Category: Voltage regulators - DC/DC circuits
Description: PMIC; DC/DC converter; Uin: 4.75÷40VDC; Uout: 1.23÷37VDC; 500mA
Type of integrated circuit: PMIC
Kind of integrated circuit: DC/DC converter
Input voltage: 4.75...40V DC
Output voltage: 1.23...37V DC
Output current: 0.5A
Case: DIP8
Mounting: THT
Topology: buck
Number of channels: 1
Kind of package: tube
на замовлення 698 шт:
термін постачання 14-30 дні (днів)
| Кількість | Ціна без ПДВ |
|---|---|
| 6+ | 74.50 грн |
| 10+ | 57.65 грн |
| 50+ | 55.18 грн |
| 100+ | 52.71 грн |
| 250+ | 51.06 грн |
| LM2574N-12G |
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Виробник: ONSEMI
Category: Voltage regulators - DC/DC circuits
Description: PMIC; DC/DC converter; DIP8; THT; tube
Type of integrated circuit: PMIC
Kind of integrated circuit: DC/DC converter
Case: DIP8
Mounting: THT
Kind of package: tube
Category: Voltage regulators - DC/DC circuits
Description: PMIC; DC/DC converter; DIP8; THT; tube
Type of integrated circuit: PMIC
Kind of integrated circuit: DC/DC converter
Case: DIP8
Mounting: THT
Kind of package: tube
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| BD137G |
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Виробник: ONSEMI
Category: NPN THT transistors
Description: Transistor: NPN; bipolar; 60V; 1.5A; 12W; TO225
Type of transistor: NPN
Polarisation: bipolar
Collector-emitter voltage: 60V
Collector current: 1.5A
Case: TO225
Mounting: THT
Frequency: 50MHz
Power dissipation: 12W
Kind of package: bulk
Category: NPN THT transistors
Description: Transistor: NPN; bipolar; 60V; 1.5A; 12W; TO225
Type of transistor: NPN
Polarisation: bipolar
Collector-emitter voltage: 60V
Collector current: 1.5A
Case: TO225
Mounting: THT
Frequency: 50MHz
Power dissipation: 12W
Kind of package: bulk
на замовлення 993 шт:
термін постачання 14-30 дні (днів)
| Кількість | Ціна без ПДВ |
|---|---|
| 7+ | 71.84 грн |
| 13+ | 32.94 грн |
| 100+ | 24.21 грн |
| BZX79C5V6 |
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Виробник: ONSEMI
Category: THT Zener diodes
Description: Diode: Zener; 0.5W; 5.6V; bulk; CASE017AG; single diode; BZX79C
Type of diode: Zener
Power dissipation: 0.5W
Zener voltage: 5.6V
Case: CASE017AG
Mounting: THT
Tolerance: ±5%
Semiconductor structure: single diode
Kind of package: bulk
Manufacturer series: BZX79C
Category: THT Zener diodes
Description: Diode: Zener; 0.5W; 5.6V; bulk; CASE017AG; single diode; BZX79C
Type of diode: Zener
Power dissipation: 0.5W
Zener voltage: 5.6V
Case: CASE017AG
Mounting: THT
Tolerance: ±5%
Semiconductor structure: single diode
Kind of package: bulk
Manufacturer series: BZX79C
на замовлення 482 шт:
термін постачання 14-30 дні (днів)
| Кількість | Ціна без ПДВ |
|---|---|
| 56+ | 7.98 грн |
| 90+ | 4.61 грн |
| 140+ | 2.95 грн |
| 178+ | 2.32 грн |
| 250+ | 1.97 грн |
| NTHL075N065SC1 |
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Виробник: ONSEMI
Category: THT N channel transistors
Description: Transistor: N-MOSFET; SiC; unipolar; 650V; 26A; Idm: 120A; 74W
Type of transistor: N-MOSFET
Technology: SiC
Polarisation: unipolar
Drain-source voltage: 650V
Drain current: 26A
Power dissipation: 74W
Case: TO247-3
Gate-source voltage: -5...18V
Mounting: THT
Gate charge: 61nC
Kind of channel: enhancement
Kind of package: tube
Pulsed drain current: 120A
On-state resistance: 68mΩ
Category: THT N channel transistors
Description: Transistor: N-MOSFET; SiC; unipolar; 650V; 26A; Idm: 120A; 74W
Type of transistor: N-MOSFET
Technology: SiC
Polarisation: unipolar
Drain-source voltage: 650V
Drain current: 26A
Power dissipation: 74W
Case: TO247-3
Gate-source voltage: -5...18V
Mounting: THT
Gate charge: 61nC
Kind of channel: enhancement
Kind of package: tube
Pulsed drain current: 120A
On-state resistance: 68mΩ
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| NTH4L075N065SC1 |
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Виробник: ONSEMI
Category: THT N channel transistors
Description: Transistor: N-MOSFET; SiC; unipolar; 650V; 26A; Idm: 120A; 74W
Type of transistor: N-MOSFET
Technology: SiC
Polarisation: unipolar
Drain-source voltage: 650V
Drain current: 26A
Power dissipation: 74W
Case: TO247-4
Gate-source voltage: -5...18V
Mounting: THT
Gate charge: 61nC
Kind of channel: enhancement
Kind of package: tube
Features of semiconductor devices: Kelvin terminal
Pulsed drain current: 120A
On-state resistance: 68mΩ
Category: THT N channel transistors
Description: Transistor: N-MOSFET; SiC; unipolar; 650V; 26A; Idm: 120A; 74W
Type of transistor: N-MOSFET
Technology: SiC
Polarisation: unipolar
Drain-source voltage: 650V
Drain current: 26A
Power dissipation: 74W
Case: TO247-4
Gate-source voltage: -5...18V
Mounting: THT
Gate charge: 61nC
Kind of channel: enhancement
Kind of package: tube
Features of semiconductor devices: Kelvin terminal
Pulsed drain current: 120A
On-state resistance: 68mΩ
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| NVBG075N065SC1 |
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Виробник: ONSEMI
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; SiC; N; 650V; 37A; 139W; D2PAK-7
Type of transistor: N-MOSFET
Technology: SiC
Polarisation: N
Drain-source voltage: 650V
Drain current: 37A
Power dissipation: 139W
Case: D2PAK-7
Gate-source voltage: -8...22V
Mounting: SMD
Gate charge: 59nC
Kind of channel: enhancement
Application: automotive industry
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; SiC; N; 650V; 37A; 139W; D2PAK-7
Type of transistor: N-MOSFET
Technology: SiC
Polarisation: N
Drain-source voltage: 650V
Drain current: 37A
Power dissipation: 139W
Case: D2PAK-7
Gate-source voltage: -8...22V
Mounting: SMD
Gate charge: 59nC
Kind of channel: enhancement
Application: automotive industry
на замовлення 800 шт:
термін постачання 14-30 дні (днів)
| Кількість | Ціна без ПДВ |
|---|---|
| 800+ | 657.22 грн |
| NXH040F120MNF1PG |
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Виробник: ONSEMI
Category: Transistor drivers
Description: Module; transistor/transistor; 1.2kV; 30A; PIM22; Press-in PCB
Type of semiconductor module: MOSFET transistor
Semiconductor structure: transistor/transistor
Drain-source voltage: 1.2kV
Drain current: 30A
Case: PIM22
Topology: H-bridge
Electrical mounting: Press-in PCB
On-state resistance: 61mΩ
Pulsed drain current: 60A
Power dissipation: 113W
Technology: SiC
Gate-source voltage: -15...25V
Kind of package: in-tray
Mechanical mounting: screw
Category: Transistor drivers
Description: Module; transistor/transistor; 1.2kV; 30A; PIM22; Press-in PCB
Type of semiconductor module: MOSFET transistor
Semiconductor structure: transistor/transistor
Drain-source voltage: 1.2kV
Drain current: 30A
Case: PIM22
Topology: H-bridge
Electrical mounting: Press-in PCB
On-state resistance: 61mΩ
Pulsed drain current: 60A
Power dissipation: 113W
Technology: SiC
Gate-source voltage: -15...25V
Kind of package: in-tray
Mechanical mounting: screw
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Мінімальне замовлення: 28 шт
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| NXH040F120MNF1PTG |
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Виробник: ONSEMI
Category: Transistor drivers
Description: Module; transistor/transistor; 1.2kV; 30A; PIM22; Press-in PCB
Type of semiconductor module: MOSFET transistor
Semiconductor structure: transistor/transistor
Drain-source voltage: 1.2kV
Drain current: 30A
Case: PIM22
Topology: H-bridge
Electrical mounting: Press-in PCB
On-state resistance: 61mΩ
Pulsed drain current: 60A
Power dissipation: 113W
Technology: SiC
Gate-source voltage: -15...25V
Kind of package: in-tray
Mechanical mounting: screw
Category: Transistor drivers
Description: Module; transistor/transistor; 1.2kV; 30A; PIM22; Press-in PCB
Type of semiconductor module: MOSFET transistor
Semiconductor structure: transistor/transistor
Drain-source voltage: 1.2kV
Drain current: 30A
Case: PIM22
Topology: H-bridge
Electrical mounting: Press-in PCB
On-state resistance: 61mΩ
Pulsed drain current: 60A
Power dissipation: 113W
Technology: SiC
Gate-source voltage: -15...25V
Kind of package: in-tray
Mechanical mounting: screw
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Мінімальне замовлення: 28 шт
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| NXH040P120MNF1PG |
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Виробник: ONSEMI
Category: Transistor drivers
Description: Module; transistor/transistor; 1.2kV; 30A; PIM18; Press-in PCB
Type of semiconductor module: MOSFET transistor
Semiconductor structure: transistor/transistor
Drain-source voltage: 1.2kV
Drain current: 30A
Case: PIM18
Topology: MOSFET half-bridge
Electrical mounting: Press-in PCB
On-state resistance: 61mΩ
Pulsed drain current: 60A
Power dissipation: 113W
Technology: SiC
Gate-source voltage: -15...25V
Kind of package: in-tray
Mechanical mounting: screw
Category: Transistor drivers
Description: Module; transistor/transistor; 1.2kV; 30A; PIM18; Press-in PCB
Type of semiconductor module: MOSFET transistor
Semiconductor structure: transistor/transistor
Drain-source voltage: 1.2kV
Drain current: 30A
Case: PIM18
Topology: MOSFET half-bridge
Electrical mounting: Press-in PCB
On-state resistance: 61mΩ
Pulsed drain current: 60A
Power dissipation: 113W
Technology: SiC
Gate-source voltage: -15...25V
Kind of package: in-tray
Mechanical mounting: screw
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Мінімальне замовлення: 28 шт
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| MMBF5485 |
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Виробник: ONSEMI
Category: SMD N channel transistors
Description: Transistor: N-JFET; unipolar; 4mA; 0.225W; SOT23; Igt: 10mA
Kind of package: reel; tape
Mounting: SMD
Type of transistor: N-JFET
Case: SOT23
Polarisation: unipolar
Gate-source voltage: -25V
Drain current: 4mA
Gate current: 10mA
Power dissipation: 0.225W
Category: SMD N channel transistors
Description: Transistor: N-JFET; unipolar; 4mA; 0.225W; SOT23; Igt: 10mA
Kind of package: reel; tape
Mounting: SMD
Type of transistor: N-JFET
Case: SOT23
Polarisation: unipolar
Gate-source voltage: -25V
Drain current: 4mA
Gate current: 10mA
Power dissipation: 0.225W
на замовлення 2456 шт:
термін постачання 14-30 дні (днів)
| Кількість | Ціна без ПДВ |
|---|---|
| 34+ | 13.30 грн |
| 47+ | 8.89 грн |
| 100+ | 7.99 грн |
| 500+ | 7.58 грн |
| 1000+ | 6.75 грн |
| SS35 |
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Виробник: ONSEMI
Category: SMD Schottky diodes
Description: Diode: Schottky rectifying; SMC; SMD; 50V; 3A; reel,tape
Mounting: SMD
Max. off-state voltage: 50V
Load current: 3A
Kind of package: reel; tape
Semiconductor structure: single diode
Case: SMC
Type of diode: Schottky rectifying
Max. forward impulse current: 100A
Max. forward voltage: 0.75V
Category: SMD Schottky diodes
Description: Diode: Schottky rectifying; SMC; SMD; 50V; 3A; reel,tape
Mounting: SMD
Max. off-state voltage: 50V
Load current: 3A
Kind of package: reel; tape
Semiconductor structure: single diode
Case: SMC
Type of diode: Schottky rectifying
Max. forward impulse current: 100A
Max. forward voltage: 0.75V
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| 1SS351-TB-E |
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Виробник: ONSEMI
Category: SMD Schottky diodes
Description: Diode: Schottky switching; SC59; SMD; 5V; 30mA; reel,tape
Mounting: SMD
Max. off-state voltage: 5V
Load current: 30mA
Kind of package: reel; tape
Semiconductor structure: double series
Case: SC59
Capacitance: 0.9pF
Type of diode: Schottky switching
Max. forward voltage: 0.23V
Category: SMD Schottky diodes
Description: Diode: Schottky switching; SC59; SMD; 5V; 30mA; reel,tape
Mounting: SMD
Max. off-state voltage: 5V
Load current: 30mA
Kind of package: reel; tape
Semiconductor structure: double series
Case: SC59
Capacitance: 0.9pF
Type of diode: Schottky switching
Max. forward voltage: 0.23V
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| NSP4201MR6T1G |
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Виробник: ONSEMI
Category: Protection diodes - arrays
Description: Diode: TVS array; 6V; 500W; unidirectional; TSOP6; Ch: 4; reel,tape
Mounting: SMD
Peak pulse power dissipation: 0.5kW
Application: automotive industry; USB
Max. off-state voltage: 5V
Kind of package: reel; tape
Semiconductor structure: unidirectional
Case: TSOP6
Type of diode: TVS array
Number of channels: 4
Breakdown voltage: 6V
Category: Protection diodes - arrays
Description: Diode: TVS array; 6V; 500W; unidirectional; TSOP6; Ch: 4; reel,tape
Mounting: SMD
Peak pulse power dissipation: 0.5kW
Application: automotive industry; USB
Max. off-state voltage: 5V
Kind of package: reel; tape
Semiconductor structure: unidirectional
Case: TSOP6
Type of diode: TVS array
Number of channels: 4
Breakdown voltage: 6V
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| SZNSP4201MR6T1G |
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Виробник: ONSEMI
Category: Protection diodes - arrays
Description: Diode: TVS array; 6V; unidirectional; TSOP6; Ch: 4; reel,tape
Mounting: SMD
Application: automotive industry
Max. off-state voltage: 5V
Kind of package: reel; tape
Semiconductor structure: unidirectional
Case: TSOP6
Type of diode: TVS array
Number of channels: 4
Breakdown voltage: 6V
Category: Protection diodes - arrays
Description: Diode: TVS array; 6V; unidirectional; TSOP6; Ch: 4; reel,tape
Mounting: SMD
Application: automotive industry
Max. off-state voltage: 5V
Kind of package: reel; tape
Semiconductor structure: unidirectional
Case: TSOP6
Type of diode: TVS array
Number of channels: 4
Breakdown voltage: 6V
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| SZESD5Z3.3T1G |
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Виробник: ONSEMI
Category: Unidirectional TVS SMD diodes
Description: Diode: TVS; 5V; unidirectional; SOD523; automotive industry
Type of diode: TVS
Max. off-state voltage: 3.3V
Breakdown voltage: 5V
Semiconductor structure: unidirectional
Case: SOD523
Mounting: SMD
Application: automotive industry
Kind of package: reel; tape
Category: Unidirectional TVS SMD diodes
Description: Diode: TVS; 5V; unidirectional; SOD523; automotive industry
Type of diode: TVS
Max. off-state voltage: 3.3V
Breakdown voltage: 5V
Semiconductor structure: unidirectional
Case: SOD523
Mounting: SMD
Application: automotive industry
Kind of package: reel; tape
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| MM74HC132M |
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Виробник: ONSEMI
Category: Gates, inverters
Description: IC: digital; NAND; Ch: 4; IN: 2; CMOS; SMD; SO14; 2÷6VDC; -40÷85°C; tube
Type of integrated circuit: digital
Mounting: SMD
Supply voltage: 2...6V DC
Kind of gate: NAND
Operating temperature: -40...85°C
Technology: CMOS
Quiescent current: 20µA
Kind of input: with Schmitt trigger
Number of inputs: 2
Kind of package: tube
Case: SO14
Family: HC
Number of channels: quad; 4
Category: Gates, inverters
Description: IC: digital; NAND; Ch: 4; IN: 2; CMOS; SMD; SO14; 2÷6VDC; -40÷85°C; tube
Type of integrated circuit: digital
Mounting: SMD
Supply voltage: 2...6V DC
Kind of gate: NAND
Operating temperature: -40...85°C
Technology: CMOS
Quiescent current: 20µA
Kind of input: with Schmitt trigger
Number of inputs: 2
Kind of package: tube
Case: SO14
Family: HC
Number of channels: quad; 4
на замовлення 94 шт:
термін постачання 14-30 дні (днів)
| Кількість | Ціна без ПДВ |
|---|---|
| 13+ | 35.48 грн |
| 18+ | 23.39 грн |
| 25+ | 20.01 грн |
| 55+ | 18.86 грн |
| MM74HC132MTC |
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Виробник: ONSEMI
Category: Gates, inverters
Description: IC: digital; NAND; Ch: 4; IN: 2; CMOS; SMD; TSSOP14; 2÷6VDC; -40÷85°C
Type of integrated circuit: digital
Mounting: SMD
Delay time: 12ns
Supply voltage: 2...6V DC
Kind of gate: NAND
Operating temperature: -40...85°C
Technology: CMOS
Kind of input: with Schmitt trigger
Number of inputs: 2
Kind of package: tube
Case: TSSOP14
Family: HC
Number of channels: quad; 4
Category: Gates, inverters
Description: IC: digital; NAND; Ch: 4; IN: 2; CMOS; SMD; TSSOP14; 2÷6VDC; -40÷85°C
Type of integrated circuit: digital
Mounting: SMD
Delay time: 12ns
Supply voltage: 2...6V DC
Kind of gate: NAND
Operating temperature: -40...85°C
Technology: CMOS
Kind of input: with Schmitt trigger
Number of inputs: 2
Kind of package: tube
Case: TSSOP14
Family: HC
Number of channels: quad; 4
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| MM74HC132MTCX |
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Виробник: ONSEMI
Category: Gates, inverters
Description: IC: digital; NAND; Ch: 4; IN: 2; CMOS; SMD; TSSOP14; 2÷6VDC; -40÷85°C
Type of integrated circuit: digital
Mounting: SMD
Delay time: 12ns
Supply voltage: 2...6V DC
Kind of gate: NAND
Operating temperature: -40...85°C
Technology: CMOS
Kind of input: with Schmitt trigger
Number of inputs: 2
Kind of package: reel; tape
Case: TSSOP14
Family: HC
Number of channels: quad; 4
Category: Gates, inverters
Description: IC: digital; NAND; Ch: 4; IN: 2; CMOS; SMD; TSSOP14; 2÷6VDC; -40÷85°C
Type of integrated circuit: digital
Mounting: SMD
Delay time: 12ns
Supply voltage: 2...6V DC
Kind of gate: NAND
Operating temperature: -40...85°C
Technology: CMOS
Kind of input: with Schmitt trigger
Number of inputs: 2
Kind of package: reel; tape
Case: TSSOP14
Family: HC
Number of channels: quad; 4
товару немає в наявності
Мінімальне замовлення: 2500 шт
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| MM74HC132MX |
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Виробник: ONSEMI
Category: Gates, inverters
Description: IC: digital; NAND; Ch: 4; IN: 2; CMOS; SMD; SO14; 2÷6VDC; -40÷85°C; 12ns
Type of integrated circuit: digital
Mounting: SMD
Delay time: 12ns
Supply voltage: 2...6V DC
Kind of gate: NAND
Operating temperature: -40...85°C
Technology: CMOS
Kind of input: with Schmitt trigger
Number of inputs: 2
Kind of package: reel; tape
Case: SO14
Family: HC
Number of channels: quad; 4
Category: Gates, inverters
Description: IC: digital; NAND; Ch: 4; IN: 2; CMOS; SMD; SO14; 2÷6VDC; -40÷85°C; 12ns
Type of integrated circuit: digital
Mounting: SMD
Delay time: 12ns
Supply voltage: 2...6V DC
Kind of gate: NAND
Operating temperature: -40...85°C
Technology: CMOS
Kind of input: with Schmitt trigger
Number of inputs: 2
Kind of package: reel; tape
Case: SO14
Family: HC
Number of channels: quad; 4
товару немає в наявності
Мінімальне замовлення: 2500 шт
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| MJE340G |
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Виробник: ONSEMI
Category: NPN THT transistors
Description: Transistor: NPN; bipolar; 300V; 0.5A; 20W; TO225
Kind of package: bulk
Power dissipation: 20W
Polarisation: bipolar
Type of transistor: NPN
Current gain: 30...240
Case: TO225
Collector current: 0.5A
Mounting: THT
Collector-emitter voltage: 300V
Category: NPN THT transistors
Description: Transistor: NPN; bipolar; 300V; 0.5A; 20W; TO225
Kind of package: bulk
Power dissipation: 20W
Polarisation: bipolar
Type of transistor: NPN
Current gain: 30...240
Case: TO225
Collector current: 0.5A
Mounting: THT
Collector-emitter voltage: 300V
на замовлення 1333 шт:
термін постачання 14-30 дні (днів)
| Кількість | Ціна без ПДВ |
|---|---|
| 8+ | 59.42 грн |
| 12+ | 35.99 грн |
| 100+ | 23.14 грн |
| 200+ | 20.59 грн |
| 250+ | 19.85 грн |
| 500+ | 17.87 грн |
| 1000+ | 17.54 грн |
| MJE350G |
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Виробник: ONSEMI
Category: PNP THT transistors
Description: Transistor: PNP; bipolar; 300V; 0.5A; 20W; TO225
Type of transistor: PNP
Polarisation: bipolar
Collector-emitter voltage: 300V
Collector current: 0.5A
Power dissipation: 20W
Case: TO225
Current gain: 30...240
Mounting: THT
Kind of package: bulk
Category: PNP THT transistors
Description: Transistor: PNP; bipolar; 300V; 0.5A; 20W; TO225
Type of transistor: PNP
Polarisation: bipolar
Collector-emitter voltage: 300V
Collector current: 0.5A
Power dissipation: 20W
Case: TO225
Current gain: 30...240
Mounting: THT
Kind of package: bulk
на замовлення 822 шт:
термін постачання 14-30 дні (днів)
| Кількість | Ціна без ПДВ |
|---|---|
| 6+ | 83.37 грн |
| 10+ | 50.16 грн |
| 20+ | 44.14 грн |
| 100+ | 33.35 грн |
| 200+ | 29.81 грн |
| 500+ | 27.67 грн |
| 74VHC02MTCX |
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Виробник: ONSEMI
Category: Gates, inverters
Description: IC: digital; NOR; Ch: 4; IN: 2; SMD; TSSOP14; 2÷5.5VDC; -40÷85°C; 20uA
Type of integrated circuit: digital
Kind of gate: NOR
Number of channels: quad; 4
Number of inputs: 2
Mounting: SMD
Case: TSSOP14
Supply voltage: 2...5.5V DC
Operating temperature: -40...85°C
Kind of package: reel; tape
Quiescent current: 20µA
Family: VHC
Category: Gates, inverters
Description: IC: digital; NOR; Ch: 4; IN: 2; SMD; TSSOP14; 2÷5.5VDC; -40÷85°C; 20uA
Type of integrated circuit: digital
Kind of gate: NOR
Number of channels: quad; 4
Number of inputs: 2
Mounting: SMD
Case: TSSOP14
Supply voltage: 2...5.5V DC
Operating temperature: -40...85°C
Kind of package: reel; tape
Quiescent current: 20µA
Family: VHC
товару немає в наявності
В кошику
од. на суму грн.
| 74VHC02M |
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Виробник: ONSEMI
Category: Gates, inverters
Description: IC: digital; NOR; Ch: 4; IN: 2; SMD; SO14; 2÷5.5VDC; -40÷85°C; tube
Type of integrated circuit: digital
Kind of gate: NOR
Number of channels: quad; 4
Number of inputs: 2
Mounting: SMD
Case: SO14
Supply voltage: 2...5.5V DC
Operating temperature: -40...85°C
Kind of package: tube
Quiescent current: 20µA
Family: VHC
Category: Gates, inverters
Description: IC: digital; NOR; Ch: 4; IN: 2; SMD; SO14; 2÷5.5VDC; -40÷85°C; tube
Type of integrated circuit: digital
Kind of gate: NOR
Number of channels: quad; 4
Number of inputs: 2
Mounting: SMD
Case: SO14
Supply voltage: 2...5.5V DC
Operating temperature: -40...85°C
Kind of package: tube
Quiescent current: 20µA
Family: VHC
товару немає в наявності
Мінімальне замовлення: 3 шт
В кошику
од. на суму грн.
| 74VHC02MX |
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Виробник: ONSEMI
Category: Gates, inverters
Description: IC: digital; NOR; Ch: 4; IN: 2; SMD; SO14; 2÷5.5VDC; -40÷85°C; 20uA; VHC
Type of integrated circuit: digital
Kind of gate: NOR
Number of channels: quad; 4
Number of inputs: 2
Mounting: SMD
Case: SO14
Supply voltage: 2...5.5V DC
Operating temperature: -40...85°C
Kind of package: reel; tape
Quiescent current: 20µA
Family: VHC
Category: Gates, inverters
Description: IC: digital; NOR; Ch: 4; IN: 2; SMD; SO14; 2÷5.5VDC; -40÷85°C; 20uA; VHC
Type of integrated circuit: digital
Kind of gate: NOR
Number of channels: quad; 4
Number of inputs: 2
Mounting: SMD
Case: SO14
Supply voltage: 2...5.5V DC
Operating temperature: -40...85°C
Kind of package: reel; tape
Quiescent current: 20µA
Family: VHC
товару немає в наявності
Мінімальне замовлення: 2500 шт
В кошику
од. на суму грн.
| FGH40T120SQDNL4 |
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Виробник: ONSEMI
Category: THT IGBT transistors
Description: Transistor: IGBT; 1.2kV; 40A; 227W; TO247-4
Type of transistor: IGBT
Collector-emitter voltage: 1.2kV
Collector current: 40A
Power dissipation: 227W
Case: TO247-4
Gate-emitter voltage: ±20V
Pulsed collector current: 160A
Mounting: THT
Gate charge: 221nC
Kind of package: tube
Features of semiconductor devices: Kelvin terminal
Category: THT IGBT transistors
Description: Transistor: IGBT; 1.2kV; 40A; 227W; TO247-4
Type of transistor: IGBT
Collector-emitter voltage: 1.2kV
Collector current: 40A
Power dissipation: 227W
Case: TO247-4
Gate-emitter voltage: ±20V
Pulsed collector current: 160A
Mounting: THT
Gate charge: 221nC
Kind of package: tube
Features of semiconductor devices: Kelvin terminal
товару немає в наявності
В кошику
од. на суму грн.
























