Продукція > ONSEMI > Всі товари виробника ONSEMI (142541) > Сторінка 2339 з 2376

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4N27M 4N27M ONSEMI pVersion=0046&contRep=ZT&docId=005056AB281E1EDE9A9C000B909D20D6&compId=4N28SM.pdf?ci_sign=ed637c7f915caf5e5a41a50bcb81f787e3204cdd pVersion=0046&contRep=ZT&docId=005056AB281E1EDE9A9C000B909A80D6&compId=4N27M.pdf?ci_sign=07a7839052f421564c7f9d69000e0018c75e712a Category: Optocouplers - analog output
Description: Optocoupler; THT; Ch: 1; OUT: transistor; Uinsul: 7.5kV; Uce: 30V
CTR@If: 10%@10mA
Collector-emitter voltage: 30V
Insulation voltage: 7.5kV
Case: DIP6
Type of optocoupler: optocoupler
Mounting: THT
Kind of output: transistor
Turn-on time: 2µs
Turn-off time: 2µs
Number of channels: 1
на замовлення 699 шт:
термін постачання 21-30 дні (днів)
10+43.04 грн
16+25.42 грн
50+18.70 грн
100+15.99 грн
Мінімальне замовлення: 10
В кошику  од. на суму  грн.
4N35M 4N35M ONSEMI 4N25M-ONS.pdf Category: Optocouplers - analog output
Description: Optocoupler; THT; Ch: 1; OUT: transistor; Uinsul: 7.5kV; Uce: 30V
Mounting: THT
Kind of output: transistor
Turn-off time: 2µs
Turn-on time: 2µs
Number of channels: 1
Collector-emitter voltage: 30V
CTR@If: 100%@10mA
Insulation voltage: 7.5kV
Case: DIP6
Type of optocoupler: optocoupler
на замовлення 27 шт:
термін постачання 21-30 дні (днів)
11+40.46 грн
15+27.73 грн
25+23.02 грн
Мінімальне замовлення: 11
В кошику  од. на суму  грн.
NCP2809BDMR2G ONSEMI ncp2809-d.pdf Category: RTV - audio integrated circuits
Description: IC: audio amplifier; Pout: 135mW; headphone driver,stereo; 16Ω
Type of integrated circuit: audio amplifier
Case: Micro10
Integrated circuit features: headphone driver; stereo
Mounting: SMD
Kind of package: reel; tape
Output power: 135mW
Supply voltage: 2.2...5.5V DC
Impedance: 16Ω
Amplifier class: AB
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NCP2811ADTBR2G NCP2811ADTBR2G ONSEMI ncp2811-d.pdf Category: RTV - audio integrated circuits
Description: IC: audio amplifier; Pout: 27mW; headphone driver,stereo; TSSOP14
Type of integrated circuit: audio amplifier
Case: TSSOP14
Integrated circuit features: headphone driver; stereo
Manufacturer series: NOCAP™ LongPlay
Mounting: SMD
Kind of package: reel; tape
Output power: 27mW
Supply voltage: 2.7...5V DC
Impedance: 16Ω
Amplifier class: AB
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NCP2811BFCCT1G ONSEMI ncp2811-d.pdf Category: RTV - audio integrated circuits
Description: IC: audio amplifier; Pout: 27mW; headphone driver,stereo; 16Ω
Type of integrated circuit: audio amplifier
Case: flip chip12
Integrated circuit features: headphone driver; stereo
Manufacturer series: NOCAP™ LongPlay
Mounting: SMD
Kind of package: reel; tape
Output power: 27mW
Supply voltage: 2.7...5V DC
Impedance: 16Ω
Amplifier class: AB
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MM3Z24VST1G MM3Z24VST1G ONSEMI pVersion=0046&contRep=ZT&docId=005056AB281E1EDFB4CE7126938B00D8&compId=MM3ZxxST1G.PDF?ci_sign=9d2986dd4c3f0c41ba91b8a7a5b3f1ff8b7685f7 Category: SMD Zener diodes
Description: Diode: Zener; 0.5W; 24V; SMD; reel,tape; SOD323; single diode
Type of diode: Zener
Power dissipation: 0.5W
Zener voltage: 24V
Kind of package: reel; tape
Case: SOD323
Mounting: SMD
Tolerance: ±2%
Semiconductor structure: single diode
Manufacturer series: MM3ZxxST1G
на замовлення 5659 шт:
термін постачання 21-30 дні (днів)
63+6.89 грн
93+4.32 грн
112+3.60 грн
148+2.72 грн
222+1.81 грн
500+1.23 грн
1000+1.14 грн
Мінімальне замовлення: 63
В кошику  од. на суму  грн.
QRE1113GR ONSEMI qre1113-d.pdf Category: Sensors and Transducers - Unclassified
Description: QRE1113GR
на замовлення 8000 шт:
термін постачання 21-30 дні (днів)
1000+24.02 грн
Мінімальне замовлення: 1000
В кошику  од. на суму  грн.
NSS30201MR6T1G ONSEMI nss30201mr6t1g-d.pdf Category: NPN SMD transistors
Description: Transistor: NPN; bipolar; 30V; 2A; 1.75W; TSOP6
Type of transistor: NPN
Polarisation: bipolar
Collector-emitter voltage: 30V
Collector current: 2A
Power dissipation: 1.75W
Case: TSOP6
Current gain: 300...900
Mounting: SMD
Kind of package: reel; tape
Frequency: 200MHz
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SNSS30201MR6T1G ONSEMI NSS30201MR6T1G-D.PDF Category: NPN SMD transistors
Description: Transistor: NPN; bipolar; 30V; 2A; 1.75W; TSOP6
Type of transistor: NPN
Polarisation: bipolar
Collector-emitter voltage: 30V
Collector current: 2A
Power dissipation: 1.75W
Case: TSOP6
Current gain: 300...900
Mounting: SMD
Kind of package: reel; tape
Frequency: 200MHz
Application: automotive industry
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NRVTSM245ET1G ONSEMI nrvtsm245e-d.pdf Category: SMD Schottky diodes
Description: Diode: Schottky rectifying; POWERMITE; SMD; 45V; 2A; reel,tape
Type of diode: Schottky rectifying
Mounting: SMD
Max. off-state voltage: 45V
Load current: 2A
Semiconductor structure: single diode
Case: POWERMITE
Max. forward voltage: 0.65V
Max. load current: 4A
Max. forward impulse current: 50A
Kind of package: reel; tape
Application: automotive industry
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NRVTSM245ET3G ONSEMI nrvtsm245e-d.pdf Category: SMD Schottky diodes
Description: Diode: Schottky rectifying; POWERMITE; SMD; 45V; 2A; reel,tape
Type of diode: Schottky rectifying
Case: POWERMITE
Mounting: SMD
Max. off-state voltage: 45V
Load current: 2A
Semiconductor structure: single diode
Max. forward voltage: 0.65V
Max. load current: 4A
Max. forward impulse current: 50A
Kind of package: reel; tape
Application: automotive industry
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NXH040F120MNF1PG ONSEMI nxh040f120mnf1-d.pdf Category: Transistor modules MOSFET
Description: Module; transistor/transistor; 1.2kV; 30A; PIM22; Press-in PCB
Type of semiconductor module: MOSFET transistor
Semiconductor structure: transistor/transistor
Drain-source voltage: 1.2kV
Drain current: 30A
Case: PIM22
Topology: H-bridge
Electrical mounting: Press-in PCB
On-state resistance: 61mΩ
Pulsed drain current: 60A
Power dissipation: 113W
Technology: SiC
Gate-source voltage: -15...25V
Kind of package: in-tray
Mechanical mounting: screw
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NXH040F120MNF1PTG ONSEMI nxh040f120mnf1-d.pdf Category: Transistor modules MOSFET
Description: Module; transistor/transistor; 1.2kV; 30A; PIM22; Press-in PCB
Type of semiconductor module: MOSFET transistor
Semiconductor structure: transistor/transistor
Drain-source voltage: 1.2kV
Drain current: 30A
Case: PIM22
Topology: H-bridge
Electrical mounting: Press-in PCB
On-state resistance: 61mΩ
Pulsed drain current: 60A
Power dissipation: 113W
Technology: SiC
Gate-source voltage: -15...25V
Kind of package: in-tray
Mechanical mounting: screw
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NXH040P120MNF1PG ONSEMI nxh040p120mnf1-d.pdf Category: Transistor modules MOSFET
Description: Module; transistor/transistor; 1.2kV; 30A; PIM18; Press-in PCB
Type of semiconductor module: MOSFET transistor
Semiconductor structure: transistor/transistor
Drain-source voltage: 1.2kV
Drain current: 30A
Case: PIM18
Topology: MOSFET half-bridge
Electrical mounting: Press-in PCB
On-state resistance: 61mΩ
Pulsed drain current: 60A
Power dissipation: 113W
Technology: SiC
Gate-source voltage: -15...25V
Kind of package: in-tray
Mechanical mounting: screw
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1N5358BG 1N5358BG ONSEMI 1N53xx.PDF Category: THT Zener diodes
Description: Diode: Zener; 5W; 22V; bulk; CASE017AA; single diode; 0.5uA; 1N53xxB
Type of diode: Zener
Power dissipation: 5W
Zener voltage: 22V
Kind of package: bulk
Case: CASE017AA
Mounting: THT
Tolerance: ±5%
Semiconductor structure: single diode
Leakage current: 0.5µA
Manufacturer series: 1N53xxB
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1N5358BRLG ONSEMI 1N53xx.PDF description Category: THT Zener diodes
Description: Diode: Zener; 5W; 22V; reel,tape; CASE017AA; single diode; 0.5uA
Type of diode: Zener
Power dissipation: 5W
Zener voltage: 22V
Kind of package: reel; tape
Case: CASE017AA
Mounting: THT
Tolerance: ±5%
Semiconductor structure: single diode
Leakage current: 0.5µA
Manufacturer series: 1N53xxB
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FFSM0665A ONSEMI ffsm0665a-d.pdf Category: SMD Schottky diodes
Description: Diode: Schottky rectifying; PQFN8x8; SiC; SMD; 650V; 8A; reel,tape
Case: PQFN8x8
Mounting: SMD
Kind of package: reel; tape
Type of diode: Schottky rectifying
Technology: SiC
Semiconductor structure: single diode
Load current: 8A
Max. off-state voltage: 650V
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DF02S DF02S ONSEMI pVersion=0046&contRep=ZT&docId=005056AB752F1EE588F7260C3387C469&compId=DF02S.pdf?ci_sign=48949b444762c71e9cdc44b798ffa8b849b255f3 Category: SMD/THT sing. phase diode bridge rectif.
Description: Bridge rectifier: single-phase; 200V; If: 1.5A; Ifsm: 50A; SDIP 4L
Type of bridge rectifier: single-phase
Max. off-state voltage: 200V
Load current: 1.5A
Max. forward impulse current: 50A
Case: SDIP 4L
Electrical mounting: SMT
Kind of package: reel; tape
на замовлення 2076 шт:
термін постачання 21-30 дні (днів)
8+56.81 грн
13+31.33 грн
50+19.26 грн
135+18.22 грн
1000+17.90 грн
1500+17.50 грн
Мінімальне замовлення: 8
В кошику  од. на суму  грн.
74ACT00MTCX 74ACT00MTCX ONSEMI 74ACT00-D.PDF FAIRS25987-1.pdf?t.download=true&u=5oefqw Category: Gates, inverters
Description: IC: digital; NAND; Ch: 4; IN: 2; SMD; TSSOP14; 4.5÷5.5VDC; -40÷85°C
Type of integrated circuit: digital
Kind of gate: NAND
Number of channels: quad; 4
Number of inputs: 2
Mounting: SMD
Case: TSSOP14
Supply voltage: 4.5...5.5V DC
Operating temperature: -40...85°C
Kind of package: reel; tape
Family: ACT
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MC74ACT00DR2G ONSEMI pVersion=0046&contRep=ZT&docId=005056AB281E1EDDA4E629562E3400D3&compId=MC74AC00-D.pdf?ci_sign=51d2f67f322eb4c4311290c02a289336628276d2 Category: Gates, inverters
Description: IC: digital; NAND; Ch: 4; IN: 2; TTL; SMD; SOIC14; ACT; 4.5÷5.5VDC; ACT
Type of integrated circuit: digital
Kind of gate: NAND
Number of channels: 4
Number of inputs: 2
Technology: TTL
Mounting: SMD
Case: SOIC14
Supply voltage: 4.5...5.5V DC
Operating temperature: -55...125°C
Kind of package: reel; tape
Family: ACT
Manufacturer series: ACT
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MC74ACT00DTR2G MC74ACT00DTR2G ONSEMI mc74ac00-d.pdf Category: Gates, inverters
Description: IC: digital; NAND; Ch: 4; IN: 2; CMOS; SMD; TSSOP14; 4.5÷5.5VDC; 40uA
Type of integrated circuit: digital
Kind of gate: NAND
Number of channels: quad; 4
Number of inputs: 2
Technology: CMOS
Mounting: SMD
Case: TSSOP14
Supply voltage: 4.5...5.5V DC
Operating temperature: -55...125°C
Kind of package: reel; tape
Quiescent current: 40µA
Family: ACT
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CAT4004AHU2-GT3 ONSEMI cat4002a-d.pdf Category: LED drivers
Description: IC: driver; LED driver; 1-wire; uDFN8; 40mA; Ch: 4; 2.4÷5.5VDC; PWM
Type of integrated circuit: driver
Mounting: SMD
Kind of integrated circuit: LED driver
Integrated circuit features: PWM
Operating temperature: -40...85°C
Output current: 40mA
Supply voltage: 2.4...5.5V DC
Number of channels: 4
Interface: 1-wire
Case: uDFN8
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FDB3652 FDB3652 ONSEMI pVersion=0046&contRep=ZT&docId=005056AB752F1ED6BECDE6A504471E28&compId=FDB3652.pdf?ci_sign=75280f79b06b2631fc6d825e841c33c9777df444 Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 100V; 61A; 150W; D2PAK
Type of transistor: N-MOSFET
Technology: PowerTrench®
Polarisation: unipolar
Drain-source voltage: 100V
Drain current: 61A
Power dissipation: 150W
Case: D2PAK
Gate-source voltage: ±20V
On-state resistance: 43mΩ
Mounting: SMD
Gate charge: 53nC
Kind of package: reel; tape
Kind of channel: enhancement
на замовлення 389 шт:
термін постачання 21-30 дні (днів)
3+180.76 грн
5+134.28 грн
10+117.49 грн
25+97.51 грн
100+88.72 грн
Мінімальне замовлення: 3
В кошику  од. на суму  грн.
MC74LCX158DTG MC74LCX158DTG ONSEMI pVersion=0046&contRep=ZT&docId=005056AB281E1EDDA4E62DEE1CD0A0D3&compId=MC74LCX158-D.pdf?ci_sign=5030d09773aa6b9bc29afd34d3a303516a47faf9 Category: Decoders, multiplexers, switches
Description: IC: digital; multiplexer,inverting; Ch: 4; IN: 2; CMOS; SMD; TSSOP16
Type of integrated circuit: digital
Kind of integrated circuit: inverting; multiplexer
Number of channels: 4
Number of inputs: 2
Technology: CMOS
Mounting: SMD
Case: TSSOP16
Manufacturer series: LCX
Family: LCX
Supply voltage: 1.5...3.6V DC
Operating temperature: -40...85°C
Kind of package: tube
Integrated circuit features: tolerates a voltage of 5V on the inputs
на замовлення 192 шт:
термін постачання 21-30 дні (днів)
8+55.09 грн
10+47.64 грн
48+39.56 грн
96+35.57 грн
Мінімальне замовлення: 8
В кошику  од. на суму  грн.
MC74LCX158DTR2G ONSEMI pVersion=0046&contRep=ZT&docId=005056AB281E1EDDA4E62DEE1CD1E0D3&compId=MC74LCX158-D.pdf?ci_sign=6bb82943c7f76d3afc41de5872d8033ace8705f2 Category: Decoders, multiplexers, switches
Description: IC: digital; multiplexer,inverting; Ch: 4; IN: 2; CMOS; SMD; TSSOP16
Type of integrated circuit: digital
Kind of integrated circuit: inverting; multiplexer
Number of channels: 4
Number of inputs: 2
Technology: CMOS
Mounting: SMD
Case: TSSOP16
Manufacturer series: LCX
Family: LCX
Supply voltage: 1.5...3.6V DC
Operating temperature: -40...85°C
Kind of package: reel; tape
Integrated circuit features: tolerates a voltage of 5V on the inputs
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BD678G BD678G ONSEMI pVersion=0046&contRep=ZT&docId=005056AB752F1EE58DBB652DBE846469&compId=BD678G.PDF?ci_sign=b4353895d13d0aeb9874ee18fd27b2bae8644daa Category: PNP THT Darlington transistors
Description: Transistor: PNP; bipolar; Darlington; 60V; 4A; 40W; TO225
Type of transistor: PNP
Polarisation: bipolar
Kind of transistor: Darlington
Collector-emitter voltage: 60V
Collector current: 4A
Power dissipation: 40W
Case: TO225
Mounting: THT
Kind of package: bulk
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HCPL0600 HCPL0600 ONSEMI pVersion=0046&contRep=ZT&docId=005056AB281E1EDE9A9C01FD74AD00D6&compId=HCPL0600.pdf?ci_sign=a4f6fa214650e375b0cc99272115e12f4a9ab590 Category: Optocouplers - digital output
Description: Optocoupler; SMD; Ch: 1; OUT: logic; Uinsul: 3.75kV; SO8; Uout: 7V
Type of optocoupler: optocoupler
Mounting: SMD
Number of channels: 1
Kind of output: logic
Insulation voltage: 3.75kV
Case: SO8
Output voltage: 7V
Turn-on time: 50ns
Turn-off time: 50ns
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NTA4153NT1G NTA4153NT1G ONSEMI pVersion=0046&contRep=ZT&docId=005056AB752F1EE7868A09F50BAA0745&compId=NTA4153N.PDF?ci_sign=e21734cf39a2d99c197db01f4643ddbc77046164 description Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 20V; 0.915A; 0.3W; SC75; ESD
Mounting: SMD
Case: SC75
Kind of package: reel; tape
Type of transistor: N-MOSFET
Drain-source voltage: 20V
Drain current: 0.915A
Gate charge: 1.82nC
Power dissipation: 0.3W
On-state resistance: 0.95Ω
Gate-source voltage: ±6V
Polarisation: unipolar
Kind of channel: enhancement
Version: ESD
на замовлення 2413 шт:
термін постачання 21-30 дні (днів)
21+20.66 грн
30+13.59 грн
34+11.83 грн
50+8.36 грн
100+7.15 грн
500+4.85 грн
1000+4.50 грн
Мінімальне замовлення: 21
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DAN222T1G DAN222T1G ONSEMI pVersion=0046&contRep=ZT&docId=005056AB281E1EDC94E96CEAD577A0CE&compId=DAN222.PDF?ci_sign=de5bb0c14bbe3cea9c18dfa8dc9629b8811f7110 Category: SMD universal diodes
Description: Diode: rectifying; SMD; 80V; 100mA; 4ns; SC75; Ufmax: 1.2V; Ifsm: 2A
Type of diode: rectifying
Semiconductor structure: common cathode; double
Mounting: SMD
Case: SC75
Kind of package: reel; tape
Features of semiconductor devices: ultrafast switching
Capacitance: 3.5pF
Reverse recovery time: 4ns
Load current: 0.1A
Power dissipation: 0.15W
Max. forward impulse current: 2A
Max. load current: 0.3A
Max. forward voltage: 1.2V
Max. off-state voltage: 80V
на замовлення 2964 шт:
термін постачання 21-30 дні (днів)
63+6.89 грн
91+4.40 грн
142+2.83 грн
500+2.06 грн
1000+1.81 грн
Мінімальне замовлення: 63
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DAP222T1G DAP222T1G ONSEMI pVersion=0046&contRep=ZT&docId=005056AB281E1EDC94E9619BF82840CE&compId=DAP222.PDF?ci_sign=5cba25a3f7a32287a337c7f229178e886b713484 Category: SMD universal diodes
Description: Diode: rectifying; SMD; 80V; 100mA; 4ns; SC75; Ufmax: 1.2V; Ifsm: 2A
Type of diode: rectifying
Semiconductor structure: common anode; double
Mounting: SMD
Case: SC75
Kind of package: reel; tape
Features of semiconductor devices: ultrafast switching
Capacitance: 3.5pF
Reverse recovery time: 4ns
Load current: 0.1A
Power dissipation: 0.15W
Max. forward impulse current: 2A
Max. load current: 0.3A
Max. forward voltage: 1.2V
Max. off-state voltage: 80V
на замовлення 5470 шт:
термін постачання 21-30 дні (днів)
63+6.89 грн
103+3.92 грн
120+3.36 грн
168+2.39 грн
500+1.80 грн
1000+1.65 грн
Мінімальне замовлення: 63
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NSVDAP222T1G ONSEMI Category: SMD universal diodes
Description: Diode: switching; SMD; 80V; 0.1A; 4ns; SC75; Ufmax: 1.2V; reel,tape
Case: SC75
Mounting: SMD
Kind of package: reel; tape
Load current: 0.1A
Max. forward voltage: 1.2V
Max. off-state voltage: 80V
Application: automotive industry
Semiconductor structure: common cathode; double
Type of diode: switching
Features of semiconductor devices: small signal
Reverse recovery time: 4ns
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NCP1380CDR2G NCP1380CDR2G ONSEMI ncp1380-d.pdf Category: Voltage regulators - DC/DC circuits
Description: IC: PMIC; SO8; 9÷28VDC
Type of integrated circuit: PMIC
Output current: -800...500mA
Mounting: SMD
Case: SO8
Number of channels: 1
Operating temperature: -40...125°C
Operating voltage: 9...28V DC
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NCP1380DDR2G NCP1380DDR2G ONSEMI ncp1380-d.pdf Category: Voltage regulators - DC/DC circuits
Description: IC: PMIC; SO8; 9÷28VDC
Type of integrated circuit: PMIC
Output current: -800...500mA
Mounting: SMD
Case: SO8
Number of channels: 1
Operating temperature: -40...125°C
Operating voltage: 9...28V DC
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FDD13AN06A0 FDD13AN06A0 ONSEMI pVersion=0046&contRep=ZT&docId=005056AB752F1ED6BECE557EF911FE28&compId=FDD13AN06A0.pdf?ci_sign=2b58636c22c4a3e8d858385b4b8d526546c519d4 Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 60V; 50A; 115W; DPAK
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 60V
Drain current: 50A
Power dissipation: 115W
Case: DPAK
Gate-source voltage: ±20V
On-state resistance: 34mΩ
Mounting: SMD
Gate charge: 29nC
Kind of package: reel; tape
Kind of channel: enhancement
Technology: PowerTrench®
на замовлення 2610 шт:
термін постачання 21-30 дні (днів)
4+128.25 грн
10+97.51 грн
25+85.52 грн
50+76.73 грн
Мінімальне замовлення: 4
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NTB190N65S3HF ONSEMI ntb190n65s3hf-d.pdf Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 650V; 20A; Idm: 50A; 162W; D2PAK
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 650V
Drain current: 20A
Case: D2PAK
Gate-source voltage: ±30V
Mounting: SMD
Kind of package: reel; tape
Kind of channel: enhancement
On-state resistance: 0.19Ω
Gate charge: 34nC
Power dissipation: 162W
Pulsed drain current: 50A
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FCP190N65F ONSEMI fcp190n65f-d.pdf Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 650V; 20.6A; Idm: 61.8A; 208W
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 650V
Drain current: 20.6A
Case: TO220-3
Gate-source voltage: ±20V
Mounting: THT
Kind of package: tube
Kind of channel: enhancement
On-state resistance: 0.19Ω
Gate charge: 60nC
Power dissipation: 208W
Pulsed drain current: 61.8A
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NVB190N65S3F ONSEMI nvb190n65s3f-d.pdf Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 650V; 20A; Idm: 60A; 162W; D2PAK
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 650V
Drain current: 20A
Case: D2PAK
Gate-source voltage: ±30V
Mounting: SMD
Kind of package: reel; tape
Kind of channel: enhancement
On-state resistance: 0.19Ω
Gate charge: 34nC
Power dissipation: 162W
Pulsed drain current: 60A
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FCH190N65F-F155 ONSEMI fch190n65f-d.pdf Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 650V; 20.6A; Idm: 61.8A; 208W
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 650V
Drain current: 20.6A
Case: TO247-3
Gate-source voltage: ±20V
Mounting: THT
Kind of package: tube
Kind of channel: enhancement
On-state resistance: 0.19Ω
Gate charge: 60nC
Power dissipation: 208W
Pulsed drain current: 61.8A
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FCP190N65S3 ONSEMI fcp190n65s3-d.pdf Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 650V; 17A; Idm: 42.5A; 144W; TO220-3
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 650V
Drain current: 17A
Case: TO220-3
Gate-source voltage: ±30V
Mounting: THT
Kind of package: tube
Kind of channel: enhancement
On-state resistance: 0.19Ω
Gate charge: 33nC
Power dissipation: 144W
Pulsed drain current: 42.5A
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FCP190N65S3R0 ONSEMI fcp190n65s3r0-d.pdf Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 650V; 17A; Idm: 42.5A; 144W; TO220-3
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 650V
Drain current: 17A
Case: TO220-3
Gate-source voltage: ±30V
Mounting: THT
Kind of package: tube
Kind of channel: enhancement
On-state resistance: 0.19Ω
Gate charge: 33nC
Power dissipation: 144W
Pulsed drain current: 42.5A
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NTPF190N65S3HF ONSEMI ntpf190n65s3hf-d.pdf Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 650V; 20A; Idm: 50A; 36W; TO220FP
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 650V
Drain current: 20A
Case: TO220FP
Gate-source voltage: ±30V
Mounting: THT
Kind of package: tube
Kind of channel: enhancement
On-state resistance: 0.19Ω
Gate charge: 34nC
Power dissipation: 36W
Pulsed drain current: 50A
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NTHL190N65S3HF ONSEMI nthl190n65s3hf-d.pdf Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 650V; 12.7A; Idm: 50A; 162W; TO247
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 650V
Drain current: 12.7A
Case: TO247
Gate-source voltage: ±30V
Mounting: THT
Kind of package: tube
Kind of channel: enhancement
On-state resistance: 0.165Ω
Gate charge: 34nC
Power dissipation: 162W
Pulsed drain current: 50A
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NTMT190N65S3H ONSEMI ntmt190n65s3h-d.pdf Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 650V; 16A; Idm: 45A; 129W; TDFN4
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 650V
Drain current: 16A
Case: TDFN4
Gate-source voltage: ±30V
Mounting: SMD
Kind of package: reel; tape
Kind of channel: enhancement
On-state resistance: 0.19Ω
Gate charge: 31nC
Power dissipation: 129W
Pulsed drain current: 45A
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NTMT190N65S3HF ONSEMI ntmt190n65s3hf-d.pdf Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 650V; 20A; Idm: 50A; 162W; TDFN4
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 650V
Drain current: 20A
Case: TDFN4
Gate-source voltage: ±30V
Mounting: SMD
Kind of package: reel; tape
Kind of channel: enhancement
On-state resistance: 0.19Ω
Gate charge: 34nC
Power dissipation: 162W
Pulsed drain current: 50A
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NTPF190N65S3H ONSEMI ntpf190n65s3h-d.pdf Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 650V; 16A; Idm: 45A; 32W; TO220FP
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 650V
Drain current: 16A
Case: TO220FP
Gate-source voltage: ±30V
Mounting: THT
Kind of package: tube
Kind of channel: enhancement
On-state resistance: 0.19Ω
Gate charge: 31nC
Power dissipation: 32W
Pulsed drain current: 45A
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US2JA ONSEMI us2aa-d.pdf Category: SMD universal diodes
Description: Diode: rectifying; SMD; 600V; 1.5A; 75ns; SMA; Ufmax: 1.7V; reel,tape
Type of diode: rectifying
Mounting: SMD
Max. off-state voltage: 0.6kV
Load current: 1.5A
Reverse recovery time: 75ns
Semiconductor structure: single diode
Case: SMA
Max. forward voltage: 1.7V
Kind of package: reel; tape
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NRVUS2JA NRVUS2JA ONSEMI us2aa-d.pdf Category: SMD universal diodes
Description: Diode: rectifying; SMD; 600V; 1.5A; 75ns; SMA; Ufmax: 1.7V; Ifsm: 50A
Type of diode: rectifying
Mounting: SMD
Max. off-state voltage: 0.6kV
Load current: 1.5A
Reverse recovery time: 75ns
Semiconductor structure: single diode
Case: SMA
Max. forward voltage: 1.7V
Max. forward impulse current: 50A
Kind of package: reel; tape
Application: automotive industry
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FDMS86550 ONSEMI fdms86550-d.pdf Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 60V; 148A; Idm: 1021A; 156W; Power56
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 60V
Drain current: 148A
Pulsed drain current: 1021A
Power dissipation: 156W
Case: Power56
Gate-source voltage: ±20V
On-state resistance: 2.6mΩ
Mounting: SMD
Gate charge: 154nC
Kind of package: reel; tape
Kind of channel: enhancement
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NCP115ASN280T2G NCP115ASN280T2G ONSEMI pVersion=0046&contRep=ZT&docId=005056AB281E1EDC94B7DE3BE78FE0CE&compId=NCP115.PDF?ci_sign=763e3006efd4b8e41c750fe3f43656b468b01d32 Category: LDO fixed voltage regulators
Description: IC: voltage regulator; LDO,linear,fixed; 2.8V; 0.3A; TSOP5; SMD
Case: TSOP5
Mounting: SMD
Kind of package: reel; tape
Kind of voltage regulator: fixed; LDO; linear
Operating temperature: -40...85°C
Output current: 0.3A
Number of channels: 1
Input voltage: 1.7...5.5V
Output voltage: 2.8V
Tolerance: ±2%
Manufacturer series: NCP115
Type of integrated circuit: voltage regulator
на замовлення 50 шт:
термін постачання 21-30 дні (днів)
36+12.05 грн
50+7.99 грн
Мінімальне замовлення: 36
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CAT25640YI-GT3 ONSEMI pVersion=0046&contRep=ZT&docId=005056AB281E1EDE80A79C9A8362C0D5&compId=CAT25640-D.pdf?ci_sign=c24f0149c53205f9fc0dae055c81eef9f7d4839a Category: Serial EEPROM memories - integ. circ.
Description: IC: EEPROM memory; 64kbEEPROM; SPI; 8kx8bit; 1.8÷5.5V; 20MHz
Case: TSSOP8
Kind of memory: EEPROM
Type of integrated circuit: EEPROM memory
Kind of package: reel; tape
Kind of interface: serial
Mounting: SMD
Interface: SPI
Operating temperature: -40...85°C
Access time: 40ns
Operating voltage: 1.8...5.5V
Memory: 64kb EEPROM
Memory organisation: 8kx8bit
Clock frequency: 20MHz
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MUR120RLG MUR120RLG ONSEMI MUR120-DTE.PDF description Category: THT universal diodes
Description: Diode: rectifying; THT; 200V; 1A; bulk; Ifsm: 35A; DO41; Ufmax: 0.875V
Type of diode: rectifying
Mounting: THT
Max. off-state voltage: 200V
Load current: 1A
Semiconductor structure: single diode
Kind of package: bulk
Max. forward impulse current: 35A
Case: DO41
Max. forward voltage: 0.875V
Reverse recovery time: 35ns
Max. load current: 1A
на замовлення 246 шт:
термін постачання 21-30 дні (днів)
27+16.35 грн
36+11.19 грн
100+8.39 грн
Мінімальне замовлення: 27
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MUR120G ONSEMI mur120-d.pdf Category: THT universal diodes
Description: Diode: rectifying; THT; 200V; 1A; bulk; Ifsm: 35A; DO41; 35ns
Type of diode: rectifying
Mounting: THT
Max. off-state voltage: 200V
Load current: 1A
Semiconductor structure: single diode
Kind of package: bulk
Max. forward impulse current: 35A
Case: DO41
Reverse recovery time: 35ns
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FDS4465 FDS4465 ONSEMI pVersion=0046&contRep=ZT&docId=005056AB752F1ED6BFFC80D368C76259&compId=FDS4465.pdf?ci_sign=0ccb8af7e225282a329af0618515c2832bcb5946 Category: SMD P channel transistors
Description: Transistor: P-MOSFET; unipolar; -20V; -13.5A; 2.5W; SO8
Polarisation: unipolar
Case: SO8
Kind of channel: enhancement
Technology: PowerTrench®
Type of transistor: P-MOSFET
Mounting: SMD
Drain current: -13.5A
Drain-source voltage: -20V
Gate charge: 0.12µC
On-state resistance: 10.5mΩ
Power dissipation: 2.5W
Gate-source voltage: ±8V
Kind of package: reel; tape
на замовлення 9 шт:
термін постачання 21-30 дні (днів)
4+117.92 грн
5+92.72 грн
Мінімальне замовлення: 4
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MMBFJ310 ONSEMI pVersion=0046&contRep=ZT&docId=E20E09388B1F0BF1A303005056AB0C4F&compId=MMBFJ310.pdf?ci_sign=228f5b3d6ad7b7ccc79d6448b08b7a0523f7a857 Category: SMD N channel transistors
Description: Transistor: N-JFET; unipolar; 0.35W; SOT23; 10mA
Type of transistor: N-JFET
Polarisation: unipolar
Power dissipation: 0.35W
Case: SOT23
Gate-source voltage: -25V
Mounting: SMD
Kind of package: reel; tape
Gate current: 10mA
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MBRS130T3G MBRS130T3G ONSEMI pVersion=0046&contRep=ZT&docId=005056AB752F1EE69CEDE2E2D6816FA8&compId=MBRS130T3G-DTE.PDF?ci_sign=fce5e89d29bd5ddc35b2eaab98e66d3d3de8699b Category: SMD Schottky diodes
Description: Diode: Schottky rectifying; SMB; SMD; 30V; 1A; reel,tape
Type of diode: Schottky rectifying
Case: SMB
Mounting: SMD
Max. off-state voltage: 30V
Load current: 1A
Semiconductor structure: single diode
Max. forward voltage: 0.6V
Kind of package: reel; tape
на замовлення 2083 шт:
термін постачання 21-30 дні (днів)
17+26.68 грн
21+19.34 грн
24+17.26 грн
50+13.35 грн
100+11.99 грн
500+9.27 грн
1000+8.87 грн
Мінімальне замовлення: 17
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MOC3162M MOC3162M ONSEMI pVersion=0046&contRep=ZT&docId=005056AB90B41EDBBFFD30200512A0C7&compId=MOC3162M.pdf?ci_sign=2db2463c48e99fdc0538bf27dc20f9493db3b15d Category: Optotriacs
Description: Optotriac; 4.17kV; Uout: 600V; DIP6; Ch: 1; MOC3162M
Type of optocoupler: optotriac
Insulation voltage: 4.17kV
Output voltage: 600V
Kind of output: triac; zero voltage crossing driver
Case: DIP6
Max. off-state voltage: 6V
Trigger current: 10mA
Mounting: THT
Number of channels: 1
Manufacturer series: MOC3162M
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MOC3162SM ONSEMI moc3163m-d.pdf Category: Optotriacs
Description: Optotriac; 4.17kV; Uout: 600V; SMT6; Ch: 1; MOC3162M; tube
Type of optocoupler: optotriac
Insulation voltage: 4.17kV
Output voltage: 600V
Kind of output: triac; zero voltage crossing driver
Case: SMT6
Max. off-state voltage: 6V
Trigger current: 10mA
Mounting: SMD
Number of channels: 1
Manufacturer series: MOC3162M
Kind of package: tube
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MURS240T3G ONSEMI murs230t3-d.pdf description Category: SMD universal diodes
Description: Diode: rectifying; SMD; 400V; 2A; 65ns; SMB; Ufmax: 1.15V; reel,tape
Type of diode: rectifying
Mounting: SMD
Max. off-state voltage: 0.4kV
Load current: 2A
Reverse recovery time: 65ns
Semiconductor structure: single diode
Case: SMB
Max. forward voltage: 1.15V
Kind of package: reel; tape
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FDH44N50 FDH44N50 ONSEMI FDH44N50.pdf Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 500V; 44A; 750W; TO247
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 500V
Drain current: 44A
Power dissipation: 750W
Case: TO247
On-state resistance: 0.12Ω
Mounting: THT
Gate charge: 108nC
Kind of package: tube
Kind of channel: enhancement
Gate-source voltage: ±30V
Technology: UniFET™
на замовлення 222 шт:
термін постачання 21-30 дні (днів)
1+552.61 грн
5+460.38 грн
10+431.61 грн
30+400.44 грн
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NSR20F40NXT5G ONSEMI nsr20f40-d.pdf Category: SMD Schottky diodes
Description: Diode: Schottky rectifying; 0603; SMD; 40V; 2A; reel,tape
Kind of package: reel; tape
Type of diode: Schottky rectifying
Semiconductor structure: single diode
Mounting: SMD
Load current: 2A
Max. forward voltage: 0.55V
Max. off-state voltage: 40V
Max. forward impulse current: 28A
Case: 0603
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4N27M pVersion=0046&contRep=ZT&docId=005056AB281E1EDE9A9C000B909D20D6&compId=4N28SM.pdf?ci_sign=ed637c7f915caf5e5a41a50bcb81f787e3204cdd pVersion=0046&contRep=ZT&docId=005056AB281E1EDE9A9C000B909A80D6&compId=4N27M.pdf?ci_sign=07a7839052f421564c7f9d69000e0018c75e712a
4N27M
Виробник: ONSEMI
Category: Optocouplers - analog output
Description: Optocoupler; THT; Ch: 1; OUT: transistor; Uinsul: 7.5kV; Uce: 30V
CTR@If: 10%@10mA
Collector-emitter voltage: 30V
Insulation voltage: 7.5kV
Case: DIP6
Type of optocoupler: optocoupler
Mounting: THT
Kind of output: transistor
Turn-on time: 2µs
Turn-off time: 2µs
Number of channels: 1
на замовлення 699 шт:
термін постачання 21-30 дні (днів)
Кількість Ціна
10+43.04 грн
16+25.42 грн
50+18.70 грн
100+15.99 грн
Мінімальне замовлення: 10
В кошику  од. на суму  грн.
4N35M 4N25M-ONS.pdf
4N35M
Виробник: ONSEMI
Category: Optocouplers - analog output
Description: Optocoupler; THT; Ch: 1; OUT: transistor; Uinsul: 7.5kV; Uce: 30V
Mounting: THT
Kind of output: transistor
Turn-off time: 2µs
Turn-on time: 2µs
Number of channels: 1
Collector-emitter voltage: 30V
CTR@If: 100%@10mA
Insulation voltage: 7.5kV
Case: DIP6
Type of optocoupler: optocoupler
на замовлення 27 шт:
термін постачання 21-30 дні (днів)
Кількість Ціна
11+40.46 грн
15+27.73 грн
25+23.02 грн
Мінімальне замовлення: 11
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NCP2809BDMR2G ncp2809-d.pdf
Виробник: ONSEMI
Category: RTV - audio integrated circuits
Description: IC: audio amplifier; Pout: 135mW; headphone driver,stereo; 16Ω
Type of integrated circuit: audio amplifier
Case: Micro10
Integrated circuit features: headphone driver; stereo
Mounting: SMD
Kind of package: reel; tape
Output power: 135mW
Supply voltage: 2.2...5.5V DC
Impedance: 16Ω
Amplifier class: AB
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NCP2811ADTBR2G ncp2811-d.pdf
NCP2811ADTBR2G
Виробник: ONSEMI
Category: RTV - audio integrated circuits
Description: IC: audio amplifier; Pout: 27mW; headphone driver,stereo; TSSOP14
Type of integrated circuit: audio amplifier
Case: TSSOP14
Integrated circuit features: headphone driver; stereo
Manufacturer series: NOCAP™ LongPlay
Mounting: SMD
Kind of package: reel; tape
Output power: 27mW
Supply voltage: 2.7...5V DC
Impedance: 16Ω
Amplifier class: AB
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NCP2811BFCCT1G ncp2811-d.pdf
Виробник: ONSEMI
Category: RTV - audio integrated circuits
Description: IC: audio amplifier; Pout: 27mW; headphone driver,stereo; 16Ω
Type of integrated circuit: audio amplifier
Case: flip chip12
Integrated circuit features: headphone driver; stereo
Manufacturer series: NOCAP™ LongPlay
Mounting: SMD
Kind of package: reel; tape
Output power: 27mW
Supply voltage: 2.7...5V DC
Impedance: 16Ω
Amplifier class: AB
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MM3Z24VST1G pVersion=0046&contRep=ZT&docId=005056AB281E1EDFB4CE7126938B00D8&compId=MM3ZxxST1G.PDF?ci_sign=9d2986dd4c3f0c41ba91b8a7a5b3f1ff8b7685f7
MM3Z24VST1G
Виробник: ONSEMI
Category: SMD Zener diodes
Description: Diode: Zener; 0.5W; 24V; SMD; reel,tape; SOD323; single diode
Type of diode: Zener
Power dissipation: 0.5W
Zener voltage: 24V
Kind of package: reel; tape
Case: SOD323
Mounting: SMD
Tolerance: ±2%
Semiconductor structure: single diode
Manufacturer series: MM3ZxxST1G
на замовлення 5659 шт:
термін постачання 21-30 дні (днів)
Кількість Ціна
63+6.89 грн
93+4.32 грн
112+3.60 грн
148+2.72 грн
222+1.81 грн
500+1.23 грн
1000+1.14 грн
Мінімальне замовлення: 63
В кошику  од. на суму  грн.
QRE1113GR qre1113-d.pdf
Виробник: ONSEMI
Category: Sensors and Transducers - Unclassified
Description: QRE1113GR
на замовлення 8000 шт:
термін постачання 21-30 дні (днів)
Кількість Ціна
1000+24.02 грн
Мінімальне замовлення: 1000
В кошику  од. на суму  грн.
NSS30201MR6T1G nss30201mr6t1g-d.pdf
Виробник: ONSEMI
Category: NPN SMD transistors
Description: Transistor: NPN; bipolar; 30V; 2A; 1.75W; TSOP6
Type of transistor: NPN
Polarisation: bipolar
Collector-emitter voltage: 30V
Collector current: 2A
Power dissipation: 1.75W
Case: TSOP6
Current gain: 300...900
Mounting: SMD
Kind of package: reel; tape
Frequency: 200MHz
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SNSS30201MR6T1G NSS30201MR6T1G-D.PDF
Виробник: ONSEMI
Category: NPN SMD transistors
Description: Transistor: NPN; bipolar; 30V; 2A; 1.75W; TSOP6
Type of transistor: NPN
Polarisation: bipolar
Collector-emitter voltage: 30V
Collector current: 2A
Power dissipation: 1.75W
Case: TSOP6
Current gain: 300...900
Mounting: SMD
Kind of package: reel; tape
Frequency: 200MHz
Application: automotive industry
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NRVTSM245ET1G nrvtsm245e-d.pdf
Виробник: ONSEMI
Category: SMD Schottky diodes
Description: Diode: Schottky rectifying; POWERMITE; SMD; 45V; 2A; reel,tape
Type of diode: Schottky rectifying
Mounting: SMD
Max. off-state voltage: 45V
Load current: 2A
Semiconductor structure: single diode
Case: POWERMITE
Max. forward voltage: 0.65V
Max. load current: 4A
Max. forward impulse current: 50A
Kind of package: reel; tape
Application: automotive industry
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NRVTSM245ET3G nrvtsm245e-d.pdf
Виробник: ONSEMI
Category: SMD Schottky diodes
Description: Diode: Schottky rectifying; POWERMITE; SMD; 45V; 2A; reel,tape
Type of diode: Schottky rectifying
Case: POWERMITE
Mounting: SMD
Max. off-state voltage: 45V
Load current: 2A
Semiconductor structure: single diode
Max. forward voltage: 0.65V
Max. load current: 4A
Max. forward impulse current: 50A
Kind of package: reel; tape
Application: automotive industry
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NXH040F120MNF1PG nxh040f120mnf1-d.pdf
Виробник: ONSEMI
Category: Transistor modules MOSFET
Description: Module; transistor/transistor; 1.2kV; 30A; PIM22; Press-in PCB
Type of semiconductor module: MOSFET transistor
Semiconductor structure: transistor/transistor
Drain-source voltage: 1.2kV
Drain current: 30A
Case: PIM22
Topology: H-bridge
Electrical mounting: Press-in PCB
On-state resistance: 61mΩ
Pulsed drain current: 60A
Power dissipation: 113W
Technology: SiC
Gate-source voltage: -15...25V
Kind of package: in-tray
Mechanical mounting: screw
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NXH040F120MNF1PTG nxh040f120mnf1-d.pdf
Виробник: ONSEMI
Category: Transistor modules MOSFET
Description: Module; transistor/transistor; 1.2kV; 30A; PIM22; Press-in PCB
Type of semiconductor module: MOSFET transistor
Semiconductor structure: transistor/transistor
Drain-source voltage: 1.2kV
Drain current: 30A
Case: PIM22
Topology: H-bridge
Electrical mounting: Press-in PCB
On-state resistance: 61mΩ
Pulsed drain current: 60A
Power dissipation: 113W
Technology: SiC
Gate-source voltage: -15...25V
Kind of package: in-tray
Mechanical mounting: screw
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NXH040P120MNF1PG nxh040p120mnf1-d.pdf
Виробник: ONSEMI
Category: Transistor modules MOSFET
Description: Module; transistor/transistor; 1.2kV; 30A; PIM18; Press-in PCB
Type of semiconductor module: MOSFET transistor
Semiconductor structure: transistor/transistor
Drain-source voltage: 1.2kV
Drain current: 30A
Case: PIM18
Topology: MOSFET half-bridge
Electrical mounting: Press-in PCB
On-state resistance: 61mΩ
Pulsed drain current: 60A
Power dissipation: 113W
Technology: SiC
Gate-source voltage: -15...25V
Kind of package: in-tray
Mechanical mounting: screw
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1N5358BG 1N53xx.PDF
1N5358BG
Виробник: ONSEMI
Category: THT Zener diodes
Description: Diode: Zener; 5W; 22V; bulk; CASE017AA; single diode; 0.5uA; 1N53xxB
Type of diode: Zener
Power dissipation: 5W
Zener voltage: 22V
Kind of package: bulk
Case: CASE017AA
Mounting: THT
Tolerance: ±5%
Semiconductor structure: single diode
Leakage current: 0.5µA
Manufacturer series: 1N53xxB
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1N5358BRLG description 1N53xx.PDF
Виробник: ONSEMI
Category: THT Zener diodes
Description: Diode: Zener; 5W; 22V; reel,tape; CASE017AA; single diode; 0.5uA
Type of diode: Zener
Power dissipation: 5W
Zener voltage: 22V
Kind of package: reel; tape
Case: CASE017AA
Mounting: THT
Tolerance: ±5%
Semiconductor structure: single diode
Leakage current: 0.5µA
Manufacturer series: 1N53xxB
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FFSM0665A ffsm0665a-d.pdf
Виробник: ONSEMI
Category: SMD Schottky diodes
Description: Diode: Schottky rectifying; PQFN8x8; SiC; SMD; 650V; 8A; reel,tape
Case: PQFN8x8
Mounting: SMD
Kind of package: reel; tape
Type of diode: Schottky rectifying
Technology: SiC
Semiconductor structure: single diode
Load current: 8A
Max. off-state voltage: 650V
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DF02S pVersion=0046&contRep=ZT&docId=005056AB752F1EE588F7260C3387C469&compId=DF02S.pdf?ci_sign=48949b444762c71e9cdc44b798ffa8b849b255f3
DF02S
Виробник: ONSEMI
Category: SMD/THT sing. phase diode bridge rectif.
Description: Bridge rectifier: single-phase; 200V; If: 1.5A; Ifsm: 50A; SDIP 4L
Type of bridge rectifier: single-phase
Max. off-state voltage: 200V
Load current: 1.5A
Max. forward impulse current: 50A
Case: SDIP 4L
Electrical mounting: SMT
Kind of package: reel; tape
на замовлення 2076 шт:
термін постачання 21-30 дні (днів)
Кількість Ціна
8+56.81 грн
13+31.33 грн
50+19.26 грн
135+18.22 грн
1000+17.90 грн
1500+17.50 грн
Мінімальне замовлення: 8
В кошику  од. на суму  грн.
74ACT00MTCX 74ACT00-D.PDF FAIRS25987-1.pdf?t.download=true&u=5oefqw
74ACT00MTCX
Виробник: ONSEMI
Category: Gates, inverters
Description: IC: digital; NAND; Ch: 4; IN: 2; SMD; TSSOP14; 4.5÷5.5VDC; -40÷85°C
Type of integrated circuit: digital
Kind of gate: NAND
Number of channels: quad; 4
Number of inputs: 2
Mounting: SMD
Case: TSSOP14
Supply voltage: 4.5...5.5V DC
Operating temperature: -40...85°C
Kind of package: reel; tape
Family: ACT
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MC74ACT00DR2G pVersion=0046&contRep=ZT&docId=005056AB281E1EDDA4E629562E3400D3&compId=MC74AC00-D.pdf?ci_sign=51d2f67f322eb4c4311290c02a289336628276d2
Виробник: ONSEMI
Category: Gates, inverters
Description: IC: digital; NAND; Ch: 4; IN: 2; TTL; SMD; SOIC14; ACT; 4.5÷5.5VDC; ACT
Type of integrated circuit: digital
Kind of gate: NAND
Number of channels: 4
Number of inputs: 2
Technology: TTL
Mounting: SMD
Case: SOIC14
Supply voltage: 4.5...5.5V DC
Operating temperature: -55...125°C
Kind of package: reel; tape
Family: ACT
Manufacturer series: ACT
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MC74ACT00DTR2G mc74ac00-d.pdf
MC74ACT00DTR2G
Виробник: ONSEMI
Category: Gates, inverters
Description: IC: digital; NAND; Ch: 4; IN: 2; CMOS; SMD; TSSOP14; 4.5÷5.5VDC; 40uA
Type of integrated circuit: digital
Kind of gate: NAND
Number of channels: quad; 4
Number of inputs: 2
Technology: CMOS
Mounting: SMD
Case: TSSOP14
Supply voltage: 4.5...5.5V DC
Operating temperature: -55...125°C
Kind of package: reel; tape
Quiescent current: 40µA
Family: ACT
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CAT4004AHU2-GT3 cat4002a-d.pdf
Виробник: ONSEMI
Category: LED drivers
Description: IC: driver; LED driver; 1-wire; uDFN8; 40mA; Ch: 4; 2.4÷5.5VDC; PWM
Type of integrated circuit: driver
Mounting: SMD
Kind of integrated circuit: LED driver
Integrated circuit features: PWM
Operating temperature: -40...85°C
Output current: 40mA
Supply voltage: 2.4...5.5V DC
Number of channels: 4
Interface: 1-wire
Case: uDFN8
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FDB3652 pVersion=0046&contRep=ZT&docId=005056AB752F1ED6BECDE6A504471E28&compId=FDB3652.pdf?ci_sign=75280f79b06b2631fc6d825e841c33c9777df444
FDB3652
Виробник: ONSEMI
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 100V; 61A; 150W; D2PAK
Type of transistor: N-MOSFET
Technology: PowerTrench®
Polarisation: unipolar
Drain-source voltage: 100V
Drain current: 61A
Power dissipation: 150W
Case: D2PAK
Gate-source voltage: ±20V
On-state resistance: 43mΩ
Mounting: SMD
Gate charge: 53nC
Kind of package: reel; tape
Kind of channel: enhancement
на замовлення 389 шт:
термін постачання 21-30 дні (днів)
Кількість Ціна
3+180.76 грн
5+134.28 грн
10+117.49 грн
25+97.51 грн
100+88.72 грн
Мінімальне замовлення: 3
В кошику  од. на суму  грн.
MC74LCX158DTG pVersion=0046&contRep=ZT&docId=005056AB281E1EDDA4E62DEE1CD0A0D3&compId=MC74LCX158-D.pdf?ci_sign=5030d09773aa6b9bc29afd34d3a303516a47faf9
MC74LCX158DTG
Виробник: ONSEMI
Category: Decoders, multiplexers, switches
Description: IC: digital; multiplexer,inverting; Ch: 4; IN: 2; CMOS; SMD; TSSOP16
Type of integrated circuit: digital
Kind of integrated circuit: inverting; multiplexer
Number of channels: 4
Number of inputs: 2
Technology: CMOS
Mounting: SMD
Case: TSSOP16
Manufacturer series: LCX
Family: LCX
Supply voltage: 1.5...3.6V DC
Operating temperature: -40...85°C
Kind of package: tube
Integrated circuit features: tolerates a voltage of 5V on the inputs
на замовлення 192 шт:
термін постачання 21-30 дні (днів)
Кількість Ціна
8+55.09 грн
10+47.64 грн
48+39.56 грн
96+35.57 грн
Мінімальне замовлення: 8
В кошику  од. на суму  грн.
MC74LCX158DTR2G pVersion=0046&contRep=ZT&docId=005056AB281E1EDDA4E62DEE1CD1E0D3&compId=MC74LCX158-D.pdf?ci_sign=6bb82943c7f76d3afc41de5872d8033ace8705f2
Виробник: ONSEMI
Category: Decoders, multiplexers, switches
Description: IC: digital; multiplexer,inverting; Ch: 4; IN: 2; CMOS; SMD; TSSOP16
Type of integrated circuit: digital
Kind of integrated circuit: inverting; multiplexer
Number of channels: 4
Number of inputs: 2
Technology: CMOS
Mounting: SMD
Case: TSSOP16
Manufacturer series: LCX
Family: LCX
Supply voltage: 1.5...3.6V DC
Operating temperature: -40...85°C
Kind of package: reel; tape
Integrated circuit features: tolerates a voltage of 5V on the inputs
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BD678G pVersion=0046&contRep=ZT&docId=005056AB752F1EE58DBB652DBE846469&compId=BD678G.PDF?ci_sign=b4353895d13d0aeb9874ee18fd27b2bae8644daa
BD678G
Виробник: ONSEMI
Category: PNP THT Darlington transistors
Description: Transistor: PNP; bipolar; Darlington; 60V; 4A; 40W; TO225
Type of transistor: PNP
Polarisation: bipolar
Kind of transistor: Darlington
Collector-emitter voltage: 60V
Collector current: 4A
Power dissipation: 40W
Case: TO225
Mounting: THT
Kind of package: bulk
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HCPL0600 pVersion=0046&contRep=ZT&docId=005056AB281E1EDE9A9C01FD74AD00D6&compId=HCPL0600.pdf?ci_sign=a4f6fa214650e375b0cc99272115e12f4a9ab590
HCPL0600
Виробник: ONSEMI
Category: Optocouplers - digital output
Description: Optocoupler; SMD; Ch: 1; OUT: logic; Uinsul: 3.75kV; SO8; Uout: 7V
Type of optocoupler: optocoupler
Mounting: SMD
Number of channels: 1
Kind of output: logic
Insulation voltage: 3.75kV
Case: SO8
Output voltage: 7V
Turn-on time: 50ns
Turn-off time: 50ns
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NTA4153NT1G description pVersion=0046&contRep=ZT&docId=005056AB752F1EE7868A09F50BAA0745&compId=NTA4153N.PDF?ci_sign=e21734cf39a2d99c197db01f4643ddbc77046164
NTA4153NT1G
Виробник: ONSEMI
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 20V; 0.915A; 0.3W; SC75; ESD
Mounting: SMD
Case: SC75
Kind of package: reel; tape
Type of transistor: N-MOSFET
Drain-source voltage: 20V
Drain current: 0.915A
Gate charge: 1.82nC
Power dissipation: 0.3W
On-state resistance: 0.95Ω
Gate-source voltage: ±6V
Polarisation: unipolar
Kind of channel: enhancement
Version: ESD
на замовлення 2413 шт:
термін постачання 21-30 дні (днів)
Кількість Ціна
21+20.66 грн
30+13.59 грн
34+11.83 грн
50+8.36 грн
100+7.15 грн
500+4.85 грн
1000+4.50 грн
Мінімальне замовлення: 21
В кошику  од. на суму  грн.
DAN222T1G pVersion=0046&contRep=ZT&docId=005056AB281E1EDC94E96CEAD577A0CE&compId=DAN222.PDF?ci_sign=de5bb0c14bbe3cea9c18dfa8dc9629b8811f7110
DAN222T1G
Виробник: ONSEMI
Category: SMD universal diodes
Description: Diode: rectifying; SMD; 80V; 100mA; 4ns; SC75; Ufmax: 1.2V; Ifsm: 2A
Type of diode: rectifying
Semiconductor structure: common cathode; double
Mounting: SMD
Case: SC75
Kind of package: reel; tape
Features of semiconductor devices: ultrafast switching
Capacitance: 3.5pF
Reverse recovery time: 4ns
Load current: 0.1A
Power dissipation: 0.15W
Max. forward impulse current: 2A
Max. load current: 0.3A
Max. forward voltage: 1.2V
Max. off-state voltage: 80V
на замовлення 2964 шт:
термін постачання 21-30 дні (днів)
Кількість Ціна
63+6.89 грн
91+4.40 грн
142+2.83 грн
500+2.06 грн
1000+1.81 грн
Мінімальне замовлення: 63
В кошику  од. на суму  грн.
DAP222T1G pVersion=0046&contRep=ZT&docId=005056AB281E1EDC94E9619BF82840CE&compId=DAP222.PDF?ci_sign=5cba25a3f7a32287a337c7f229178e886b713484
DAP222T1G
Виробник: ONSEMI
Category: SMD universal diodes
Description: Diode: rectifying; SMD; 80V; 100mA; 4ns; SC75; Ufmax: 1.2V; Ifsm: 2A
Type of diode: rectifying
Semiconductor structure: common anode; double
Mounting: SMD
Case: SC75
Kind of package: reel; tape
Features of semiconductor devices: ultrafast switching
Capacitance: 3.5pF
Reverse recovery time: 4ns
Load current: 0.1A
Power dissipation: 0.15W
Max. forward impulse current: 2A
Max. load current: 0.3A
Max. forward voltage: 1.2V
Max. off-state voltage: 80V
на замовлення 5470 шт:
термін постачання 21-30 дні (днів)
Кількість Ціна
63+6.89 грн
103+3.92 грн
120+3.36 грн
168+2.39 грн
500+1.80 грн
1000+1.65 грн
Мінімальне замовлення: 63
В кошику  од. на суму  грн.
NSVDAP222T1G
Виробник: ONSEMI
Category: SMD universal diodes
Description: Diode: switching; SMD; 80V; 0.1A; 4ns; SC75; Ufmax: 1.2V; reel,tape
Case: SC75
Mounting: SMD
Kind of package: reel; tape
Load current: 0.1A
Max. forward voltage: 1.2V
Max. off-state voltage: 80V
Application: automotive industry
Semiconductor structure: common cathode; double
Type of diode: switching
Features of semiconductor devices: small signal
Reverse recovery time: 4ns
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NCP1380CDR2G ncp1380-d.pdf
NCP1380CDR2G
Виробник: ONSEMI
Category: Voltage regulators - DC/DC circuits
Description: IC: PMIC; SO8; 9÷28VDC
Type of integrated circuit: PMIC
Output current: -800...500mA
Mounting: SMD
Case: SO8
Number of channels: 1
Operating temperature: -40...125°C
Operating voltage: 9...28V DC
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NCP1380DDR2G ncp1380-d.pdf
NCP1380DDR2G
Виробник: ONSEMI
Category: Voltage regulators - DC/DC circuits
Description: IC: PMIC; SO8; 9÷28VDC
Type of integrated circuit: PMIC
Output current: -800...500mA
Mounting: SMD
Case: SO8
Number of channels: 1
Operating temperature: -40...125°C
Operating voltage: 9...28V DC
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FDD13AN06A0 pVersion=0046&contRep=ZT&docId=005056AB752F1ED6BECE557EF911FE28&compId=FDD13AN06A0.pdf?ci_sign=2b58636c22c4a3e8d858385b4b8d526546c519d4
FDD13AN06A0
Виробник: ONSEMI
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 60V; 50A; 115W; DPAK
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 60V
Drain current: 50A
Power dissipation: 115W
Case: DPAK
Gate-source voltage: ±20V
On-state resistance: 34mΩ
Mounting: SMD
Gate charge: 29nC
Kind of package: reel; tape
Kind of channel: enhancement
Technology: PowerTrench®
на замовлення 2610 шт:
термін постачання 21-30 дні (днів)
Кількість Ціна
4+128.25 грн
10+97.51 грн
25+85.52 грн
50+76.73 грн
Мінімальне замовлення: 4
В кошику  од. на суму  грн.
NTB190N65S3HF ntb190n65s3hf-d.pdf
Виробник: ONSEMI
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 650V; 20A; Idm: 50A; 162W; D2PAK
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 650V
Drain current: 20A
Case: D2PAK
Gate-source voltage: ±30V
Mounting: SMD
Kind of package: reel; tape
Kind of channel: enhancement
On-state resistance: 0.19Ω
Gate charge: 34nC
Power dissipation: 162W
Pulsed drain current: 50A
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FCP190N65F fcp190n65f-d.pdf
Виробник: ONSEMI
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 650V; 20.6A; Idm: 61.8A; 208W
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 650V
Drain current: 20.6A
Case: TO220-3
Gate-source voltage: ±20V
Mounting: THT
Kind of package: tube
Kind of channel: enhancement
On-state resistance: 0.19Ω
Gate charge: 60nC
Power dissipation: 208W
Pulsed drain current: 61.8A
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NVB190N65S3F nvb190n65s3f-d.pdf
Виробник: ONSEMI
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 650V; 20A; Idm: 60A; 162W; D2PAK
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 650V
Drain current: 20A
Case: D2PAK
Gate-source voltage: ±30V
Mounting: SMD
Kind of package: reel; tape
Kind of channel: enhancement
On-state resistance: 0.19Ω
Gate charge: 34nC
Power dissipation: 162W
Pulsed drain current: 60A
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FCH190N65F-F155 fch190n65f-d.pdf
Виробник: ONSEMI
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 650V; 20.6A; Idm: 61.8A; 208W
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 650V
Drain current: 20.6A
Case: TO247-3
Gate-source voltage: ±20V
Mounting: THT
Kind of package: tube
Kind of channel: enhancement
On-state resistance: 0.19Ω
Gate charge: 60nC
Power dissipation: 208W
Pulsed drain current: 61.8A
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FCP190N65S3 fcp190n65s3-d.pdf
Виробник: ONSEMI
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 650V; 17A; Idm: 42.5A; 144W; TO220-3
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 650V
Drain current: 17A
Case: TO220-3
Gate-source voltage: ±30V
Mounting: THT
Kind of package: tube
Kind of channel: enhancement
On-state resistance: 0.19Ω
Gate charge: 33nC
Power dissipation: 144W
Pulsed drain current: 42.5A
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FCP190N65S3R0 fcp190n65s3r0-d.pdf
Виробник: ONSEMI
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 650V; 17A; Idm: 42.5A; 144W; TO220-3
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 650V
Drain current: 17A
Case: TO220-3
Gate-source voltage: ±30V
Mounting: THT
Kind of package: tube
Kind of channel: enhancement
On-state resistance: 0.19Ω
Gate charge: 33nC
Power dissipation: 144W
Pulsed drain current: 42.5A
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NTPF190N65S3HF ntpf190n65s3hf-d.pdf
Виробник: ONSEMI
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 650V; 20A; Idm: 50A; 36W; TO220FP
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 650V
Drain current: 20A
Case: TO220FP
Gate-source voltage: ±30V
Mounting: THT
Kind of package: tube
Kind of channel: enhancement
On-state resistance: 0.19Ω
Gate charge: 34nC
Power dissipation: 36W
Pulsed drain current: 50A
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NTHL190N65S3HF nthl190n65s3hf-d.pdf
Виробник: ONSEMI
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 650V; 12.7A; Idm: 50A; 162W; TO247
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 650V
Drain current: 12.7A
Case: TO247
Gate-source voltage: ±30V
Mounting: THT
Kind of package: tube
Kind of channel: enhancement
On-state resistance: 0.165Ω
Gate charge: 34nC
Power dissipation: 162W
Pulsed drain current: 50A
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NTMT190N65S3H ntmt190n65s3h-d.pdf
Виробник: ONSEMI
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 650V; 16A; Idm: 45A; 129W; TDFN4
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 650V
Drain current: 16A
Case: TDFN4
Gate-source voltage: ±30V
Mounting: SMD
Kind of package: reel; tape
Kind of channel: enhancement
On-state resistance: 0.19Ω
Gate charge: 31nC
Power dissipation: 129W
Pulsed drain current: 45A
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NTMT190N65S3HF ntmt190n65s3hf-d.pdf
Виробник: ONSEMI
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 650V; 20A; Idm: 50A; 162W; TDFN4
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 650V
Drain current: 20A
Case: TDFN4
Gate-source voltage: ±30V
Mounting: SMD
Kind of package: reel; tape
Kind of channel: enhancement
On-state resistance: 0.19Ω
Gate charge: 34nC
Power dissipation: 162W
Pulsed drain current: 50A
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NTPF190N65S3H ntpf190n65s3h-d.pdf
Виробник: ONSEMI
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 650V; 16A; Idm: 45A; 32W; TO220FP
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 650V
Drain current: 16A
Case: TO220FP
Gate-source voltage: ±30V
Mounting: THT
Kind of package: tube
Kind of channel: enhancement
On-state resistance: 0.19Ω
Gate charge: 31nC
Power dissipation: 32W
Pulsed drain current: 45A
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US2JA us2aa-d.pdf
Виробник: ONSEMI
Category: SMD universal diodes
Description: Diode: rectifying; SMD; 600V; 1.5A; 75ns; SMA; Ufmax: 1.7V; reel,tape
Type of diode: rectifying
Mounting: SMD
Max. off-state voltage: 0.6kV
Load current: 1.5A
Reverse recovery time: 75ns
Semiconductor structure: single diode
Case: SMA
Max. forward voltage: 1.7V
Kind of package: reel; tape
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NRVUS2JA us2aa-d.pdf
NRVUS2JA
Виробник: ONSEMI
Category: SMD universal diodes
Description: Diode: rectifying; SMD; 600V; 1.5A; 75ns; SMA; Ufmax: 1.7V; Ifsm: 50A
Type of diode: rectifying
Mounting: SMD
Max. off-state voltage: 0.6kV
Load current: 1.5A
Reverse recovery time: 75ns
Semiconductor structure: single diode
Case: SMA
Max. forward voltage: 1.7V
Max. forward impulse current: 50A
Kind of package: reel; tape
Application: automotive industry
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FDMS86550 fdms86550-d.pdf
Виробник: ONSEMI
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 60V; 148A; Idm: 1021A; 156W; Power56
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 60V
Drain current: 148A
Pulsed drain current: 1021A
Power dissipation: 156W
Case: Power56
Gate-source voltage: ±20V
On-state resistance: 2.6mΩ
Mounting: SMD
Gate charge: 154nC
Kind of package: reel; tape
Kind of channel: enhancement
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NCP115ASN280T2G pVersion=0046&contRep=ZT&docId=005056AB281E1EDC94B7DE3BE78FE0CE&compId=NCP115.PDF?ci_sign=763e3006efd4b8e41c750fe3f43656b468b01d32
NCP115ASN280T2G
Виробник: ONSEMI
Category: LDO fixed voltage regulators
Description: IC: voltage regulator; LDO,linear,fixed; 2.8V; 0.3A; TSOP5; SMD
Case: TSOP5
Mounting: SMD
Kind of package: reel; tape
Kind of voltage regulator: fixed; LDO; linear
Operating temperature: -40...85°C
Output current: 0.3A
Number of channels: 1
Input voltage: 1.7...5.5V
Output voltage: 2.8V
Tolerance: ±2%
Manufacturer series: NCP115
Type of integrated circuit: voltage regulator
на замовлення 50 шт:
термін постачання 21-30 дні (днів)
Кількість Ціна
36+12.05 грн
50+7.99 грн
Мінімальне замовлення: 36
В кошику  од. на суму  грн.
CAT25640YI-GT3 pVersion=0046&contRep=ZT&docId=005056AB281E1EDE80A79C9A8362C0D5&compId=CAT25640-D.pdf?ci_sign=c24f0149c53205f9fc0dae055c81eef9f7d4839a
Виробник: ONSEMI
Category: Serial EEPROM memories - integ. circ.
Description: IC: EEPROM memory; 64kbEEPROM; SPI; 8kx8bit; 1.8÷5.5V; 20MHz
Case: TSSOP8
Kind of memory: EEPROM
Type of integrated circuit: EEPROM memory
Kind of package: reel; tape
Kind of interface: serial
Mounting: SMD
Interface: SPI
Operating temperature: -40...85°C
Access time: 40ns
Operating voltage: 1.8...5.5V
Memory: 64kb EEPROM
Memory organisation: 8kx8bit
Clock frequency: 20MHz
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MUR120RLG description MUR120-DTE.PDF
MUR120RLG
Виробник: ONSEMI
Category: THT universal diodes
Description: Diode: rectifying; THT; 200V; 1A; bulk; Ifsm: 35A; DO41; Ufmax: 0.875V
Type of diode: rectifying
Mounting: THT
Max. off-state voltage: 200V
Load current: 1A
Semiconductor structure: single diode
Kind of package: bulk
Max. forward impulse current: 35A
Case: DO41
Max. forward voltage: 0.875V
Reverse recovery time: 35ns
Max. load current: 1A
на замовлення 246 шт:
термін постачання 21-30 дні (днів)
Кількість Ціна
27+16.35 грн
36+11.19 грн
100+8.39 грн
Мінімальне замовлення: 27
В кошику  од. на суму  грн.
MUR120G mur120-d.pdf
Виробник: ONSEMI
Category: THT universal diodes
Description: Diode: rectifying; THT; 200V; 1A; bulk; Ifsm: 35A; DO41; 35ns
Type of diode: rectifying
Mounting: THT
Max. off-state voltage: 200V
Load current: 1A
Semiconductor structure: single diode
Kind of package: bulk
Max. forward impulse current: 35A
Case: DO41
Reverse recovery time: 35ns
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FDS4465 pVersion=0046&contRep=ZT&docId=005056AB752F1ED6BFFC80D368C76259&compId=FDS4465.pdf?ci_sign=0ccb8af7e225282a329af0618515c2832bcb5946
FDS4465
Виробник: ONSEMI
Category: SMD P channel transistors
Description: Transistor: P-MOSFET; unipolar; -20V; -13.5A; 2.5W; SO8
Polarisation: unipolar
Case: SO8
Kind of channel: enhancement
Technology: PowerTrench®
Type of transistor: P-MOSFET
Mounting: SMD
Drain current: -13.5A
Drain-source voltage: -20V
Gate charge: 0.12µC
On-state resistance: 10.5mΩ
Power dissipation: 2.5W
Gate-source voltage: ±8V
Kind of package: reel; tape
на замовлення 9 шт:
термін постачання 21-30 дні (днів)
Кількість Ціна
4+117.92 грн
5+92.72 грн
Мінімальне замовлення: 4
В кошику  од. на суму  грн.
MMBFJ310 pVersion=0046&contRep=ZT&docId=E20E09388B1F0BF1A303005056AB0C4F&compId=MMBFJ310.pdf?ci_sign=228f5b3d6ad7b7ccc79d6448b08b7a0523f7a857
Виробник: ONSEMI
Category: SMD N channel transistors
Description: Transistor: N-JFET; unipolar; 0.35W; SOT23; 10mA
Type of transistor: N-JFET
Polarisation: unipolar
Power dissipation: 0.35W
Case: SOT23
Gate-source voltage: -25V
Mounting: SMD
Kind of package: reel; tape
Gate current: 10mA
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MBRS130T3G pVersion=0046&contRep=ZT&docId=005056AB752F1EE69CEDE2E2D6816FA8&compId=MBRS130T3G-DTE.PDF?ci_sign=fce5e89d29bd5ddc35b2eaab98e66d3d3de8699b
MBRS130T3G
Виробник: ONSEMI
Category: SMD Schottky diodes
Description: Diode: Schottky rectifying; SMB; SMD; 30V; 1A; reel,tape
Type of diode: Schottky rectifying
Case: SMB
Mounting: SMD
Max. off-state voltage: 30V
Load current: 1A
Semiconductor structure: single diode
Max. forward voltage: 0.6V
Kind of package: reel; tape
на замовлення 2083 шт:
термін постачання 21-30 дні (днів)
Кількість Ціна
17+26.68 грн
21+19.34 грн
24+17.26 грн
50+13.35 грн
100+11.99 грн
500+9.27 грн
1000+8.87 грн
Мінімальне замовлення: 17
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MOC3162M pVersion=0046&contRep=ZT&docId=005056AB90B41EDBBFFD30200512A0C7&compId=MOC3162M.pdf?ci_sign=2db2463c48e99fdc0538bf27dc20f9493db3b15d
MOC3162M
Виробник: ONSEMI
Category: Optotriacs
Description: Optotriac; 4.17kV; Uout: 600V; DIP6; Ch: 1; MOC3162M
Type of optocoupler: optotriac
Insulation voltage: 4.17kV
Output voltage: 600V
Kind of output: triac; zero voltage crossing driver
Case: DIP6
Max. off-state voltage: 6V
Trigger current: 10mA
Mounting: THT
Number of channels: 1
Manufacturer series: MOC3162M
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MOC3162SM moc3163m-d.pdf
Виробник: ONSEMI
Category: Optotriacs
Description: Optotriac; 4.17kV; Uout: 600V; SMT6; Ch: 1; MOC3162M; tube
Type of optocoupler: optotriac
Insulation voltage: 4.17kV
Output voltage: 600V
Kind of output: triac; zero voltage crossing driver
Case: SMT6
Max. off-state voltage: 6V
Trigger current: 10mA
Mounting: SMD
Number of channels: 1
Manufacturer series: MOC3162M
Kind of package: tube
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MURS240T3G description murs230t3-d.pdf
Виробник: ONSEMI
Category: SMD universal diodes
Description: Diode: rectifying; SMD; 400V; 2A; 65ns; SMB; Ufmax: 1.15V; reel,tape
Type of diode: rectifying
Mounting: SMD
Max. off-state voltage: 0.4kV
Load current: 2A
Reverse recovery time: 65ns
Semiconductor structure: single diode
Case: SMB
Max. forward voltage: 1.15V
Kind of package: reel; tape
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FDH44N50 FDH44N50.pdf
FDH44N50
Виробник: ONSEMI
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 500V; 44A; 750W; TO247
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 500V
Drain current: 44A
Power dissipation: 750W
Case: TO247
On-state resistance: 0.12Ω
Mounting: THT
Gate charge: 108nC
Kind of package: tube
Kind of channel: enhancement
Gate-source voltage: ±30V
Technology: UniFET™
на замовлення 222 шт:
термін постачання 21-30 дні (днів)
Кількість Ціна
1+552.61 грн
5+460.38 грн
10+431.61 грн
30+400.44 грн
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NSR20F40NXT5G nsr20f40-d.pdf
Виробник: ONSEMI
Category: SMD Schottky diodes
Description: Diode: Schottky rectifying; 0603; SMD; 40V; 2A; reel,tape
Kind of package: reel; tape
Type of diode: Schottky rectifying
Semiconductor structure: single diode
Mounting: SMD
Load current: 2A
Max. forward voltage: 0.55V
Max. off-state voltage: 40V
Max. forward impulse current: 28A
Case: 0603
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