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MC33174DR2G MC33174DR2G ONSEMI pVersion=0046&contRep=ZT&docId=005056AB752F1EE5A0F6A56FC0C3411C&compId=MC33172DG-DTE.PDF?ci_sign=75d33d92f5492c18acf8af66fca3207b27f497d2 Category: SMD operational amplifiers
Description: IC: operational amplifier; 1.8MHz; Ch: 4; SO14; ±1.5÷22VDC,3÷44VDC
Type of integrated circuit: operational amplifier
Bandwidth: 1.8MHz
Mounting: SMT
Case: SO14
Slew rate: 2.1V/μs
Operating temperature: -40...85°C
Input offset voltage: 2mV
Voltage supply range: ± 1.5...22V DC; 3...44V DC
Kind of package: reel; tape
Number of channels: 4
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MC33174DTBR2G ONSEMI mc33171-d.pdf Category: SMD operational amplifiers
Description: IC: operational amplifier; 1.8MHz; TSSOP14; ±1.5÷22VDC,3÷44VDC
Type of integrated circuit: operational amplifier
Bandwidth: 1.8MHz
Mounting: SMT
Case: TSSOP14
Slew rate: 2.1V/μs
Operating temperature: -40...85°C
Input offset voltage: 6.5mV
Voltage supply range: ± 1.5...22V DC; 3...44V DC
Kind of package: reel; tape
Input bias current: 0.2µA
Input offset current: 40nA
Number of channels: quad
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MC33174VDR2G ONSEMI mc33171-d.pdf Category: SMD operational amplifiers
Description: IC: operational amplifier; 1.8MHz; SO14; ±1.5÷22VDC,3÷44VDC
Type of integrated circuit: operational amplifier
Bandwidth: 1.8MHz
Mounting: SMT
Case: SO14
Slew rate: 2.1V/μs
Operating temperature: -40...125°C
Input offset voltage: 6.5mV
Voltage supply range: ± 1.5...22V DC; 3...44V DC
Kind of package: reel; tape
Input bias current: 0.2µA
Input offset current: 40nA
Number of channels: quad
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MMBD2836LT1G ONSEMI mmbd2835lt1-d.pdf Category: SMD universal diodes
Description: Diode: switching; SMD; 75V; 0.1A; 4ns; SOT23; Ufmax: 1V; reel,tape
Type of diode: switching
Mounting: SMD
Max. off-state voltage: 75V
Load current: 0.1A
Reverse recovery time: 4ns
Semiconductor structure: common anode; double
Features of semiconductor devices: small signal
Case: SOT23
Max. forward voltage: 1V
Kind of package: reel; tape
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MMBD2837LT1G MMBD2837LT1G ONSEMI pVersion=0046&contRep=ZT&docId=005056AB82531ED998CD38A84AE97820&compId=MMBD2837_8.pdf?ci_sign=50204fe3b7b73e3b0b616b2e8be0f02eced94911 Category: SMD universal diodes
Description: Diode: switching; SMD; 75V; 0.15A; 4ns; SOT23; Ufmax: 1.2V; 225mW
Type of diode: switching
Mounting: SMD
Max. off-state voltage: 75V
Load current: 0.15A
Reverse recovery time: 4ns
Semiconductor structure: common cathode; double
Case: SOT23
Max. forward voltage: 1.2V
Kind of package: reel; tape
Capacitance: 4pF
Power dissipation: 0.225W
Max. load current: 0.45A
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NTHL185N60S5H ONSEMI nthl185n60s5h-d.pdf Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 600V; 15A; Idm: 53A; 116W; TO247-3
Mounting: THT
Case: TO247-3
Power dissipation: 116W
Kind of package: tube
Kind of channel: enhancement
Type of transistor: N-MOSFET
Gate charge: 25nC
On-state resistance: 0.185Ω
Drain current: 15A
Gate-source voltage: ±30V
Pulsed drain current: 53A
Drain-source voltage: 600V
Polarisation: unipolar
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NTMT185N60S5H ONSEMI ntmt185n60s5h-d.pdf Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 600V; 15A; Idm: 53A; 116W; TDFN4
Mounting: SMD
Case: TDFN4
Power dissipation: 116W
Kind of package: reel; tape
Kind of channel: enhancement
Type of transistor: N-MOSFET
Gate charge: 25nC
On-state resistance: 0.185Ω
Drain current: 15A
Gate-source voltage: ±30V
Pulsed drain current: 53A
Drain-source voltage: 600V
Polarisation: unipolar
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BC846ALT3G ONSEMI bc846alt1-d.pdf Category: NPN SMD transistors
Description: Transistor: NPN; bipolar; 65V; 100mA; 225mW; SOT23; general purpose
Type of transistor: NPN
Polarisation: bipolar
Collector-emitter voltage: 65V
Collector current: 0.1A
Power dissipation: 0.225W
Case: SOT23
Current gain: 110
Mounting: SMD
Frequency: 100MHz
Application: general purpose
на замовлення 20000 шт:
термін постачання 21-30 дні (днів)
10000+1.05 грн
Мінімальне замовлення: 10000
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NTMFS4C020NT1G ONSEMI ntmfs4c020n-d.pdf Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 30V; 370A; Idm: 900A; 161W; DFN5
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 30V
Drain current: 370A
Pulsed drain current: 900A
Power dissipation: 161W
Case: DFN5
Gate-source voltage: ±20V
On-state resistance: 670µΩ
Mounting: SMD
Gate charge: 63nC
Kind of package: reel; tape
Kind of channel: enhancement
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PZTA42T1G PZTA42T1G ONSEMI pVersion=0046&contRep=ZT&docId=005056AB752F1EE58DD196B51470E469&compId=PZTA42T1G.PDF?ci_sign=ecbfab87bf45a7a6ac20159ed8af43b24fcead2b Category: NPN SMD transistors
Description: Transistor: NPN; bipolar; 300V; 0.5A; 1.5W; SOT223-4,TO261-4
Type of transistor: NPN
Polarisation: bipolar
Collector-emitter voltage: 300V
Collector current: 0.5A
Power dissipation: 1.5W
Case: SOT223-4; TO261-4
Current gain: 40
Mounting: SMD
Kind of package: reel; tape
Frequency: 50MHz
на замовлення 497 шт:
термін постачання 21-30 дні (днів)
17+26.68 грн
24+16.78 грн
50+12.63 грн
100+11.19 грн
250+9.67 грн
Мінімальне замовлення: 17
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SPZTA42T1G ONSEMI pzta42t1-d.pdf Category: NPN SMD transistors
Description: Transistor: NPN; bipolar; 300V; 0.5A; 1.5W; SOT223-4,TO261-4
Type of transistor: NPN
Polarisation: bipolar
Collector-emitter voltage: 300V
Collector current: 0.5A
Power dissipation: 1.5W
Case: SOT223-4; TO261-4
Current gain: 40
Mounting: SMD
Kind of package: tape
Frequency: 50MHz
Application: automotive industry
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FCD1300N80Z ONSEMI fcd1300n80z-d.pdf Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 800V; 4A; Idm: 12A; 52W; DPAK
Mounting: SMD
Kind of channel: enhancement
Type of transistor: N-MOSFET
Polarisation: unipolar
Gate charge: 16.2nC
On-state resistance: 1.3Ω
Drain current: 4A
Pulsed drain current: 12A
Gate-source voltage: ±20V
Power dissipation: 52W
Drain-source voltage: 800V
Kind of package: reel; tape
Case: DPAK
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NCV4299CD133R2G ONSEMI ncv4299c-d.pdf Category: LDO fixed voltage regulators
Description: IC: voltage regulator; LDO,linear,fixed; 3.3V; 0.15A; SO8; SMD
Mounting: SMD
Kind of voltage regulator: fixed; LDO; linear
Type of integrated circuit: voltage regulator
Output voltage: 3.3V
Output current: 0.15A
Number of channels: 1
Application: automotive industry
Kind of package: reel; tape
Case: SO8
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BZX84C10LT1G BZX84C10LT1G ONSEMI BZX84B_BZX84C.PDF Category: SMD Zener diodes
Description: Diode: Zener; 0.3W; 10V; SMD; reel,tape; SOT23; single diode; 0.2uA
Type of diode: Zener
Power dissipation: 0.3W
Zener voltage: 10V
Mounting: SMD
Tolerance: ±5%
Kind of package: reel; tape
Case: SOT23
Semiconductor structure: single diode
Leakage current: 0.2µA
Manufacturer series: BZX84C
на замовлення 5446 шт:
термін постачання 21-30 дні (днів)
72+6.03 грн
112+3.60 грн
166+2.41 грн
196+2.05 грн
250+1.65 грн
500+1.41 грн
1000+1.22 грн
3000+1.20 грн
Мінімальне замовлення: 72
В кошику  од. на суму  грн.
2SB1123S-TD-E 2SB1123S-TD-E ONSEMI en1727-d.pdf Category: PNP SMD transistors
Description: Transistor: PNP; bipolar; 50V; 2A; 0.5W; SOT89
Type of transistor: PNP
Polarisation: bipolar
Collector-emitter voltage: 50V
Collector current: 2A
Power dissipation: 0.5W
Case: SOT89
Mounting: SMD
Kind of package: reel; tape
Frequency: 150MHz
Current gain: 140...280
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NCP1012ST100T3G NCP1012ST100T3G ONSEMI ncp1010-d.pdf Category: Voltage regulators - PWM circuits
Description: IC: PMIC; AC/DC switcher,PWM controller; 250mA; 100kHz; Ch: 1; 11Ω
Type of integrated circuit: PMIC
Kind of integrated circuit: AC/DC switcher; PWM controller
Output current: 0.25A
Frequency: 0.1MHz
Mounting: SMD
Case: SOT223
Topology: flyback
Number of channels: 1
Operating temperature: -40...125°C
On-state resistance: 11Ω
Operating voltage: 8.5...10V DC
Duty cycle factor: 0...72%
Kind of package: reel; tape
Application: SMPS
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NCP1072STAT3G ONSEMI ncp1070-d.pdf Category: Voltage regulators - DC/DC circuits
Description: IC: PMIC; AC/DC switcher,PWM controller; SOT223; flyback
Type of integrated circuit: PMIC
Kind of integrated circuit: AC/DC switcher; PWM controller
Output current: 0.25A
Frequency: 59...71kHz
Mounting: SMD
Case: SOT223
Topology: flyback
Number of channels: 1
Operating temperature: -40...125°C
On-state resistance: 16Ω
Operating voltage: 6.3...10V DC
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NCP1072STBT3G ONSEMI ncp1070-d.pdf Category: Voltage regulators - DC/DC circuits
Description: IC: PMIC; AC/DC switcher,PWM controller; SOT223; flyback
Type of integrated circuit: PMIC
Kind of integrated circuit: AC/DC switcher; PWM controller
Output current: 0.25A
Frequency: 90...110kHz
Mounting: SMD
Case: SOT223
Topology: flyback
Number of channels: 1
Operating temperature: -40...125°C
On-state resistance: 16Ω
Operating voltage: 6.3...10V DC
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MC14517BDWR2G ONSEMI pVersion=0046&contRep=ZT&docId=005056AB281E1EDDA4E627B9CA56C0D3&compId=MC14517B-D.pdf?ci_sign=9274c0a28544a33b00e673fea76b574be22cb9b6 Category: Shift registers
Description: IC: digital; 64bit,static shift register; Ch: 2; CMOS; SMD; SO16WB
Type of integrated circuit: digital
Kind of integrated circuit: 64bit; static shift register
Number of channels: 2
Technology: CMOS
Mounting: SMD
Case: SO16WB
Family: HEF4000B
Operating temperature: -55...125°C
Supply voltage: 3...18V DC
Kind of package: reel; tape
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NCV59745AMW180TAG ONSEMI ncv59745-d.pdf Category: LDO fixed voltage regulators
Description: IC: voltage regulator; LDO,linear,fixed; 1.8V; 3A; SMD; reel,tape
Kind of package: reel; tape
Kind of voltage regulator: fixed; LDO; linear
Type of integrated circuit: voltage regulator
Number of channels: 1
Output voltage: 1.8V
Output current: 3A
Application: automotive industry
Mounting: SMD
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NLU2G17AMX1TCG ONSEMI nlu2g17-d.pdf Category: Buffers, transceivers, drivers
Description: IC: digital; buffer,non-inverting; Ch: 2; CMOS; SMD; ULLGA6; 40uA
Type of integrated circuit: digital
Kind of integrated circuit: buffer; non-inverting
Number of channels: 2
Technology: CMOS
Mounting: SMD
Case: ULLGA6
Supply voltage: 1.65...5.5V DC
Kind of package: reel; tape
Kind of input: with Schmitt trigger
Operating temperature: -55...125°C
Quiescent current: 40µA
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NLX2G17AMX1TCG ONSEMI NLX2G17_Rev2_Oct2012.pdf Category: Buffers, transceivers, drivers
Description: IC: digital; buffer,non-inverting; Ch: 2; CMOS; SMD; ULLGA6
Type of integrated circuit: digital
Kind of integrated circuit: buffer; non-inverting
Number of channels: 2
Technology: CMOS
Mounting: SMD
Case: ULLGA6
Supply voltage: 1.65...5.5V DC
Kind of package: reel; tape
Kind of input: with Schmitt trigger
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1N5369BG ONSEMI pVersion=0046&contRep=ZT&docId=005056AB281E1EDFB4B706AA2B43C0D8&compId=1N53xx.PDF?ci_sign=2dd0986a0cecc581986dbc6f69ac36c2a8667bd6 Category: THT Zener diodes
Description: Diode: Zener; 5W; 51V; bulk; CASE017AA; single diode; 0.5uA; 1N53xxB
Mounting: THT
Tolerance: ±5%
Semiconductor structure: single diode
Type of diode: Zener
Leakage current: 0.5µA
Case: CASE017AA
Kind of package: bulk
Power dissipation: 5W
Zener voltage: 51V
Manufacturer series: 1N53xxB
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2SB1201S-TL-E ONSEMI en2112-d.html Category: PNP SMD transistors
Description: Transistor: PNP; bipolar; 50V; 2A; 0.8W; DPAK
Mounting: SMD
Case: DPAK
Kind of package: reel; tape
Type of transistor: PNP
Power dissipation: 0.8W
Collector current: 2A
Collector-emitter voltage: 50V
Current gain: 140...280
Frequency: 150MHz
Polarisation: bipolar
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FDPF320N06L FDPF320N06L ONSEMI fdpf320n06l-d.pdf Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 60V; 15A; Idm: 84A; 26W; TO220FP
Type of transistor: N-MOSFET
Technology: PowerTrench®
Polarisation: unipolar
Drain-source voltage: 60V
Drain current: 15A
Pulsed drain current: 84A
Power dissipation: 26W
Case: TO220FP
Gate-source voltage: ±20V
On-state resistance: 25mΩ
Mounting: THT
Gate charge: 30.2nC
Kind of package: tube
Kind of channel: enhancement
Features of semiconductor devices: logic level
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TCA0372BDWR2G ONSEMI tca0372-d.pdf Category: SMD operational amplifiers
Description: IC: operational amplifier
Type of integrated circuit: operational amplifier
на замовлення 1000 шт:
термін постачання 21-30 дні (днів)
1000+56.81 грн
Мінімальне замовлення: 1000
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NRVUB1620CTRT4G ONSEMI mur1620ctr-d.pdf Category: SMD universal diodes
Description: Diode: rectifying; SMD; 200V; 8Ax2; 85ns; D2PAK; Ufmax: 1.2V
Type of diode: rectifying
Mounting: SMD
Max. off-state voltage: 200V
Load current: 8A x2
Reverse recovery time: 85ns
Semiconductor structure: common anode; double
Case: D2PAK
Max. forward voltage: 1.2V
Max. load current: 16A
Kind of package: reel; tape
Max. forward impulse current: 100A
Application: automotive industry
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NTTFS020N06CTAG ONSEMI NTTFS020N06C-D.PDF Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 60V; 27A; Idm: 128A; 15W; WDFN8
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 60V
Drain current: 27A
Pulsed drain current: 128A
Power dissipation: 15W
Case: WDFN8
Gate-source voltage: ±20V
On-state resistance: 20.3mΩ
Mounting: SMD
Gate charge: 5.8nC
Kind of package: reel; tape
Kind of channel: enhancement
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NVTFS020N06CTAG ONSEMI NVTFS020N06C-D.PDF Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 60V; 27A; Idm: 128A; 15W; WDFN8
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 60V
Drain current: 27A
Pulsed drain current: 128A
Power dissipation: 15W
Case: WDFN8
Gate-source voltage: ±20V
On-state resistance: 20.3mΩ
Mounting: SMD
Gate charge: 5.8nC
Kind of package: reel; tape
Kind of channel: enhancement
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NVTFWS020N06CTAG ONSEMI NVTFS020N06C-D.PDF Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 60V; 27A; Idm: 128A; 15W; WDFNW8
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 60V
Drain current: 27A
Pulsed drain current: 128A
Power dissipation: 15W
Case: WDFNW8
Gate-source voltage: ±20V
On-state resistance: 20.3mΩ
Mounting: SMD
Gate charge: 5.8nC
Kind of package: reel; tape
Kind of channel: enhancement
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MUR820G MUR820G ONSEMI pVersion=0046&contRep=ZT&docId=005056AB752F1EE584E78E58FD650469&compId=MUR820G.PDF?ci_sign=69c6ffc89ef598cdd231e5009660967438bd635c description Category: THT universal diodes
Description: Diode: rectifying; THT; 200V; 8A; tube; Ifsm: 100A; TO220AC; 35ns
Type of diode: rectifying
Mounting: THT
Max. off-state voltage: 200V
Load current: 8A
Semiconductor structure: single diode
Kind of package: tube
Max. forward impulse current: 100A
Case: TO220AC
Max. forward voltage: 0.975V
Max. load current: 16A
Reverse recovery time: 35ns
Heatsink thickness: max. 1.4mm
на замовлення 682 шт:
термін постачання 21-30 дні (днів)
7+70.58 грн
10+54.59 грн
50+45.00 грн
100+41.24 грн
250+36.93 грн
500+35.97 грн
Мінімальне замовлення: 7
В кошику  од. на суму  грн.
MMSZ4702T1G MMSZ4702T1G ONSEMI pVersion=0046&contRep=ZT&docId=005056AB281E1EDFB4CFEB7388A7C0D8&compId=MMSZ4xxxT1G.PDF?ci_sign=a85907a4b31579eb401f684e4c002657dc7dfe7a Category: SMD Zener diodes
Description: Diode: Zener; 0.5W; 15V; SMD; reel,tape; SOD123; single diode
Mounting: SMD
Tolerance: ±5%
Kind of package: reel; tape
Semiconductor structure: single diode
Type of diode: Zener
Leakage current: 50nA
Power dissipation: 0.5W
Zener voltage: 15V
Case: SOD123
Manufacturer series: MMSZ4xxT1G
на замовлення 6556 шт:
термін постачання 21-30 дні (днів)
63+6.89 грн
97+4.16 грн
120+3.36 грн
139+2.88 грн
165+2.43 грн
250+1.94 грн
500+1.63 грн
1000+1.36 грн
Мінімальне замовлення: 63
В кошику  од. на суму  грн.
1N5934BG 1N5934BG ONSEMI pVersion=0046&contRep=ZT&docId=005056AB281E1EDFB4B76911095C60D8&compId=1N59xxB.pdf?ci_sign=08740ab8d99b6d9aec88108daea62be4df615f0c Category: THT Zener diodes
Description: Diode: Zener; 3W; 24V; bulk; CASE59; single diode; 1uA; 1N59xxB
Type of diode: Zener
Power dissipation: 3W
Zener voltage: 24V
Kind of package: bulk
Case: CASE59
Mounting: THT
Tolerance: ±5%
Semiconductor structure: single diode
Manufacturer series: 1N59xxB
Leakage current: 1µA
на замовлення 1053 шт:
термін постачання 21-30 дні (днів)
17+26.68 грн
20+20.46 грн
22+18.30 грн
100+11.99 грн
250+10.31 грн
Мінімальне замовлення: 17
В кошику  од. на суму  грн.
1SMA5934BT3G 1SMA5934BT3G ONSEMI pVersion=0046&contRep=ZT&docId=005056AB90B41EDC81949BABC3B320C7&compId=1SMA59xxBT3.PDF?ci_sign=ae78e9fa686988a769322b3766b51c193588ea67 Category: SMD Zener diodes
Description: Diode: Zener; 1.5W; 24V; SMD; reel,tape; SMA; single diode
Type of diode: Zener
Power dissipation: 1.5W
Zener voltage: 24V
Mounting: SMD
Tolerance: ±5%
Kind of package: reel; tape
Case: SMA
Semiconductor structure: single diode
Manufacturer series: 1SMA59xxBT3G
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MMBZ5248BLT1G MMBZ5248BLT1G ONSEMI pVersion=0046&contRep=ZT&docId=005056AB281E1EDFB4CAA5C0BD20A0D8&compId=MMBZ52xxBLT1G.PDF?ci_sign=e66b6ae8d428f13192cf8029f8987439859092fc Category: SMD Zener diodes
Description: Diode: Zener; 0.3W; 18V; SMD; reel,tape; SOT23; single diode; 0.1uA
Type of diode: Zener
Power dissipation: 0.3W
Zener voltage: 18V
Mounting: SMD
Tolerance: ±5%
Kind of package: reel; tape
Case: SOT23
Semiconductor structure: single diode
Leakage current: 0.1µA
Manufacturer series: MMBZ52xxBLT1G
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SZMMBZ5248BLT1G ONSEMI pVersion=0046&contRep=ZT&docId=005056AB281E1EDFB4CAA5C0BD20A0D8&compId=MMBZ52xxBLT1G.PDF?ci_sign=e66b6ae8d428f13192cf8029f8987439859092fc Category: SMD Zener diodes
Description: Diode: Zener; 0.3W; 18V; SMD; reel,tape; SOT23; single diode; 0.1uA
Type of diode: Zener
Power dissipation: 0.3W
Zener voltage: 18V
Mounting: SMD
Tolerance: ±5%
Kind of package: reel; tape
Case: SOT23
Semiconductor structure: single diode
Leakage current: 0.1µA
Manufacturer series: MMBZ52xxBLT1G
Application: automotive industry
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MOC3052M MOC3052M ONSEMI MOC3052M-ONS.PDF Category: Optotriacs
Description: Optotriac; 5.3kV; Uout: 600V; DIP6; MOC3052M
Mounting: THT
Trigger current: 10mA
Output voltage: 600V
Insulation voltage: 5.3kV
Manufacturer series: MOC3052M
Case: DIP6
Type of optocoupler: optotriac
Kind of output: without zero voltage crossing driver
на замовлення 73 шт:
термін постачання 21-30 дні (днів)
7+65.42 грн
11+39.16 грн
50+33.33 грн
Мінімальне замовлення: 7
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KSC5502DTM ONSEMI pVersion=0046&contRep=ZT&docId=005056AB281E1EDEBCE428E7376320D6&compId=KSC5502D.pdf?ci_sign=7139fb7979a4edd6f91a986578b7a7115e735a86 Category: NPN SMD transistors
Description: Transistor: NPN; bipolar; 600V; 2A; 87.83W; DPAK
Type of transistor: NPN
Polarisation: bipolar
Collector-emitter voltage: 600V
Collector current: 2A
Power dissipation: 87.83W
Case: DPAK
Pulsed collector current: 4A
Current gain: 12...30
Mounting: SMD
Kind of package: reel; tape
Features of semiconductor devices: integrated anti-parallel diode
Frequency: 11MHz
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KSC5502TU ONSEMI pVersion=0046&contRep=ZT&docId=005056AB281E1EDEBCE42C283A4B80D6&compId=KSC5502.pdf?ci_sign=d091db68383e1ae3b7b0092cfb80fe5c4d71e12b Category: NPN THT transistors
Description: Transistor: NPN; bipolar; 600V; 2A; 50W; TO220AB
Type of transistor: NPN
Polarisation: bipolar
Collector-emitter voltage: 600V
Collector current: 2A
Power dissipation: 50W
Case: TO220AB
Pulsed collector current: 4A
Current gain: 12...30
Mounting: THT
Kind of package: tube
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BAV99LT3G BAV99LT3G ONSEMI pVersion=0046&contRep=ZT&docId=005056AB90B41ED9B3F68A2206D2C0C4&compId=BAV99LT3G.PDF?ci_sign=5d3fb25daa8884041a840340031ab2de05997614 Category: SMD universal diodes
Description: Diode: switching; SMD; 100V; 0.215A; 6ns; SOT23; Ufmax: 1.75V; 225mW
Type of diode: switching
Mounting: SMD
Max. off-state voltage: 100V
Load current: 0.215A
Reverse recovery time: 6ns
Semiconductor structure: double series
Capacitance: 1.5pF
Case: SOT23
Max. forward voltage: 1.75V
Max. forward impulse current: 2A
Power dissipation: 0.225W
Kind of package: reel; tape
Max. load current: 0.45A
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SBAV99LT3G SBAV99LT3G ONSEMI bav99lt1-d.pdf Category: SMD universal diodes
Description: Diode: switching; SMD; 100V; 0.215A; 6ns; SOT23; Ufmax: 1.25V; 300mW
Type of diode: switching
Mounting: SMD
Max. off-state voltage: 100V
Load current: 0.215A
Reverse recovery time: 6ns
Semiconductor structure: double series
Capacitance: 1.5pF
Case: SOT23
Max. forward voltage: 1.25V
Max. forward impulse current: 2A
Leakage current: 50µA
Power dissipation: 0.3W
Kind of package: reel; tape
Application: automotive industry
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1N5231BTR ONSEMI 1N52xxB.PDF Category: THT Zener diodes
Description: Diode: Zener; 0.5W; 5.1V; reel,tape; CASE017AG; single diode; 5uA
Type of diode: Zener
Power dissipation: 0.5W
Zener voltage: 5.1V
Kind of package: reel; tape
Case: CASE017AG
Mounting: THT
Tolerance: ±5%
Semiconductor structure: single diode
Leakage current: 5µA
Manufacturer series: 1N52xxB
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LM2575T-3.3G LM2575T-3.3G ONSEMI pVersion=0046&contRep=ZT&docId=005056AB752F1ED68AAB2A8FFD09BE21&compId=LM2575-ON-DTE.PDF?ci_sign=91792adb27eab164ca8ff9fb230c949c2520fd88 Category: Voltage regulators - DC/DC circuits
Description: PMIC; DC/DC converter; Uin: 4.75÷40VDC; Uout: 3.3VDC; 1A; TO220-5
Type of integrated circuit: PMIC
Kind of integrated circuit: DC/DC converter
Input voltage: 4.75...40V DC
Output voltage: 3.3V DC
Output current: 1A
Case: TO220-5
Mounting: THT
Frequency: 42...63kHz
Topology: buck
Number of channels: 1
Operating temperature: -40...125°C
Kind of package: tube
на замовлення 41 шт:
термін постачання 21-30 дні (днів)
3+188.51 грн
10+115.89 грн
Мінімальне замовлення: 3
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LM2575TV-ADJG ONSEMI lm2575-d.pdf Category: Voltage regulators - DC/DC circuits
Description: PMIC; DC/DC converter; TO220-5; THT; tube
Type of integrated circuit: PMIC
Kind of integrated circuit: DC/DC converter
Case: TO220-5
Mounting: THT
Kind of package: tube
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MMSZ5248B ONSEMI pVersion=0046&contRep=ZT&docId=005056AB281E1EDFB4D04381F20DC0D8&compId=MMSZ52xxT1G.PDF?ci_sign=fdb8f3e427e766b88a37e5251c191ddf82ded01f Category: SMD Zener diodes
Description: Diode: Zener; 0.5W; 18V; SMD; reel,tape; SOD123; single diode
Type of diode: Zener
Power dissipation: 0.5W
Zener voltage: 18V
Mounting: SMD
Tolerance: ±5%
Kind of package: reel; tape
Case: SOD123
Semiconductor structure: single diode
Manufacturer series: MMSZ52xxB
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MMBD1204 MMBD1204 ONSEMI ONSM-S-A0003587619-1.pdf?t.download=true&u=5oefqw Category: SMD universal diodes
Description: Diode: switching; SMD; 100V; 0.2A; 4ns; SOT23; Ufmax: 1.1V; Ifsm: 2A
Type of diode: switching
Mounting: SMD
Max. off-state voltage: 100V
Load current: 0.2A
Reverse recovery time: 4ns
Semiconductor structure: common cathode; double
Case: SOT23
Max. forward voltage: 1.1V
Kind of package: reel; tape
Leakage current: 0.1mA
Capacitance: 2pF
Power dissipation: 0.35W
Max. forward impulse current: 2A
на замовлення 1180 шт:
термін постачання 21-30 дні (днів)
32+13.77 грн
50+8.07 грн
73+5.51 грн
100+4.68 грн
250+3.80 грн
500+3.28 грн
1000+2.84 грн
Мінімальне замовлення: 32
В кошику  од. на суму  грн.
NVTFS003N04CTAG ONSEMI nvtfs003n04c-d.pdf Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 40V; 103A; Idm: 484A; 22W; WDFN8
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 40V
Drain current: 103A
Pulsed drain current: 484A
Power dissipation: 22W
Case: WDFN8
Gate-source voltage: ±20V
On-state resistance: 3.5mΩ
Mounting: SMD
Gate charge: 23nC
Kind of package: reel; tape
Kind of channel: enhancement
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NVTFS008N04CTAG ONSEMI nvtfs008n04c-d.pdf Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 40V; 48A; Idm: 193A; 12W; WDFN8
Case: WDFN8
Mounting: SMD
Kind of package: reel; tape
Type of transistor: N-MOSFET
Gate-source voltage: ±20V
Gate charge: 10nC
On-state resistance: 8.5mΩ
Power dissipation: 12W
Drain current: 48A
Drain-source voltage: 40V
Pulsed drain current: 193A
Polarisation: unipolar
Kind of channel: enhancement
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NVTFS027N10MCLTAG ONSEMI nvtfs027n10mcl-d.pdf Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 100V; 28A; Idm: 119A; 23W; WDFN8
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 100V
Drain current: 28A
Pulsed drain current: 119A
Power dissipation: 23W
Case: WDFN8
Gate-source voltage: ±20V
On-state resistance: 26mΩ
Mounting: SMD
Gate charge: 11.5nC
Kind of package: reel; tape
Kind of channel: enhancement
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2SC3646S-TD-E 2SC3646S-TD-E ONSEMI 2sa1416jp-d.pdf Category: NPN SMD transistors
Description: Transistor: NPN; bipolar; 100V; 1A; 0.5W; SOT89
Polarisation: bipolar
Mounting: SMD
Type of transistor: NPN
Kind of package: reel; tape
Case: SOT89
Power dissipation: 0.5W
Collector current: 1A
Collector-emitter voltage: 100V
Current gain: 140...280
Frequency: 120MHz
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S3M S3M ONSEMI pVersion=0046&contRep=ZT&docId=005056AB752F1EE784EFC7B91ED14745&compId=S3A.pdf?ci_sign=4cb59c823e1cdd51a4b5ea04ea7f6d2110e07cfe Category: SMD universal diodes
Description: Diode: rectifying; SMD; 1kV; 3A; SMC; Ifsm: 100A; 2.6W; reel,tape
Type of diode: rectifying
Case: SMC
Mounting: SMD
Max. off-state voltage: 1kV
Load current: 3A
Semiconductor structure: single diode
Capacitance: 60pF
Max. forward impulse current: 100A
Kind of package: reel; tape
Power dissipation: 2.6W
на замовлення 2620 шт:
термін постачання 21-30 дні (днів)
12+36.15 грн
17+23.58 грн
50+17.42 грн
78+12.07 грн
214+11.43 грн
1000+11.03 грн
Мінімальне замовлення: 12
В кошику  од. на суму  грн.
1N5360BG ONSEMI pVersion=0046&contRep=ZT&docId=005056AB281E1EDFB4B706AA2B43C0D8&compId=1N53xx.PDF?ci_sign=2dd0986a0cecc581986dbc6f69ac36c2a8667bd6 Category: THT Zener diodes
Description: Diode: Zener; 5W; 25V; bulk; CASE017AA; single diode; 0.5uA; 1N53xxB
Type of diode: Zener
Power dissipation: 5W
Zener voltage: 25V
Kind of package: bulk
Case: CASE017AA
Mounting: THT
Tolerance: ±5%
Semiconductor structure: single diode
Leakage current: 0.5µA
Manufacturer series: 1N53xxB
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1N5360BRLG ONSEMI pVersion=0046&contRep=ZT&docId=005056AB281E1EDFB4B706AA2B43C0D8&compId=1N53xx.PDF?ci_sign=2dd0986a0cecc581986dbc6f69ac36c2a8667bd6 Category: THT Zener diodes
Description: Diode: Zener; 5W; 25V; reel,tape; CASE017AA; single diode; 0.5uA
Type of diode: Zener
Power dissipation: 5W
Zener voltage: 25V
Kind of package: reel; tape
Case: CASE017AA
Mounting: THT
Tolerance: ±5%
Semiconductor structure: single diode
Leakage current: 0.5µA
Manufacturer series: 1N53xxB
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NJL0281DG ONSEMI njl0281d-d.pdf Category: NPN THT transistors
Description: Transistor: NPN + diode; bipolar; 260V; 15A; 180W; TO264-5
Type of transistor: NPN + diode
Polarisation: bipolar
Power dissipation: 180W
Case: TO264-5
Mounting: THT
Kind of package: tube
Collector current: 15A
Collector-emitter voltage: 260V
Frequency: 30MHz
Current gain: 75...150
Pulsed collector current: 25A
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NCP11187A065PG ONSEMI ncp11184-d.pdf Category: Voltage regulators - DC/DC circuits
Description: IC: PMIC; AC/DC switcher,PWM controller; DIP7; flyback; 7.8÷26VDC
Case: DIP7
Topology: flyback
Mounting: SMD
Type of integrated circuit: PMIC
Operating temperature: -40...125°C
On-state resistance: 0.87Ω
Number of channels: 1
Operating voltage: 7.8...26V DC
Kind of integrated circuit: AC/DC switcher; PWM controller
Frequency: 62...68kHz
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NCP11187A100PG ONSEMI ncp11184-d.pdf Category: Voltage regulators - DC/DC circuits
Description: IC: PMIC; AC/DC switcher,PWM controller; DIP7; flyback; 7.8÷26VDC
Case: DIP7
Topology: flyback
Mounting: SMD
Type of integrated circuit: PMIC
Operating temperature: -40...125°C
On-state resistance: 0.87Ω
Number of channels: 1
Operating voltage: 7.8...26V DC
Kind of integrated circuit: AC/DC switcher; PWM controller
Frequency: 95...105kHz
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FFSP3065A FFSP3065A ONSEMI pVersion=0046&contRep=ZT&docId=005056AB281E1EDC95E9F0BD9FFB20CE&compId=FFSP3065A.pdf?ci_sign=ae6f21021727f98b886609f3ebf329b4107f5380 Category: THT Schottky diodes
Description: Diode: Schottky rectifying; SiC; THT; 650V; 30A; TO220-2; Ir: 600uA
Case: TO220-2
Mounting: THT
Kind of package: tube
Technology: SiC
Max. forward voltage: 2.4V
Type of diode: Schottky rectifying
Load current: 30A
Power dissipation: 40W
Max. load current: 75A
Max. forward impulse current: 150A
Semiconductor structure: single diode
Max. off-state voltage: 650V
Leakage current: 0.6mA
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FFSP3065B ONSEMI ffsp3065b-d.pdf Category: THT Schottky diodes
Description: Diode: Schottky rectifying; SiC; THT; 650V; 30A; TO220-2; tube
Case: TO220-2
Mounting: THT
Kind of package: tube
Technology: SiC
Max. forward voltage: 1.7V
Type of diode: Schottky rectifying
Load current: 30A
Semiconductor structure: single diode
Max. off-state voltage: 650V
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MC74VHCT138ADTRG ONSEMI pVersion=0046&contRep=ZT&docId=005056AB281E1EDDA4E63369DB2B60D3&compId=MC74VHCT138A-D.pdf?ci_sign=3abfdf0569c893dab664b8bd62ba19e1777908c4 Category: Decoders, multiplexers, switches
Description: IC: digital; 3 to 8 line,decoder; Ch: 1; IN: 6; CMOS,TTL; SMD; VHCT
Type of integrated circuit: digital
Kind of integrated circuit: 3 to 8 line; decoder
Number of channels: 1
Technology: CMOS; TTL
Mounting: SMD
Case: TSSOP16
Family: VHCT
Operating temperature: -55...125°C
Manufacturer series: VHCT
Number of inputs: 6
Kind of package: reel; tape
Supply voltage: 3...5.5V DC
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MGSF1N03LT1G MGSF1N03LT1G ONSEMI mgsf1n03lt1-d.pdf Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 30V; 2.1A; 690mW; SOT23
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 30V
Drain current: 2.1A
Power dissipation: 0.69W
Case: SOT23
Gate-source voltage: ±20V
On-state resistance: 80mΩ
Mounting: SMD
Kind of package: reel; tape
Kind of channel: enhancement
Gate charge: 6nC
на замовлення 2893 шт:
термін постачання 21-30 дні (днів)
28+15.49 грн
39+10.31 грн
50+8.55 грн
100+7.91 грн
250+7.27 грн
500+6.71 грн
1000+6.31 грн
Мінімальне замовлення: 28
В кошику  од. на суму  грн.
MC33174DR2G pVersion=0046&contRep=ZT&docId=005056AB752F1EE5A0F6A56FC0C3411C&compId=MC33172DG-DTE.PDF?ci_sign=75d33d92f5492c18acf8af66fca3207b27f497d2
MC33174DR2G
Виробник: ONSEMI
Category: SMD operational amplifiers
Description: IC: operational amplifier; 1.8MHz; Ch: 4; SO14; ±1.5÷22VDC,3÷44VDC
Type of integrated circuit: operational amplifier
Bandwidth: 1.8MHz
Mounting: SMT
Case: SO14
Slew rate: 2.1V/μs
Operating temperature: -40...85°C
Input offset voltage: 2mV
Voltage supply range: ± 1.5...22V DC; 3...44V DC
Kind of package: reel; tape
Number of channels: 4
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MC33174DTBR2G mc33171-d.pdf
Виробник: ONSEMI
Category: SMD operational amplifiers
Description: IC: operational amplifier; 1.8MHz; TSSOP14; ±1.5÷22VDC,3÷44VDC
Type of integrated circuit: operational amplifier
Bandwidth: 1.8MHz
Mounting: SMT
Case: TSSOP14
Slew rate: 2.1V/μs
Operating temperature: -40...85°C
Input offset voltage: 6.5mV
Voltage supply range: ± 1.5...22V DC; 3...44V DC
Kind of package: reel; tape
Input bias current: 0.2µA
Input offset current: 40nA
Number of channels: quad
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MC33174VDR2G mc33171-d.pdf
Виробник: ONSEMI
Category: SMD operational amplifiers
Description: IC: operational amplifier; 1.8MHz; SO14; ±1.5÷22VDC,3÷44VDC
Type of integrated circuit: operational amplifier
Bandwidth: 1.8MHz
Mounting: SMT
Case: SO14
Slew rate: 2.1V/μs
Operating temperature: -40...125°C
Input offset voltage: 6.5mV
Voltage supply range: ± 1.5...22V DC; 3...44V DC
Kind of package: reel; tape
Input bias current: 0.2µA
Input offset current: 40nA
Number of channels: quad
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MMBD2836LT1G mmbd2835lt1-d.pdf
Виробник: ONSEMI
Category: SMD universal diodes
Description: Diode: switching; SMD; 75V; 0.1A; 4ns; SOT23; Ufmax: 1V; reel,tape
Type of diode: switching
Mounting: SMD
Max. off-state voltage: 75V
Load current: 0.1A
Reverse recovery time: 4ns
Semiconductor structure: common anode; double
Features of semiconductor devices: small signal
Case: SOT23
Max. forward voltage: 1V
Kind of package: reel; tape
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MMBD2837LT1G pVersion=0046&contRep=ZT&docId=005056AB82531ED998CD38A84AE97820&compId=MMBD2837_8.pdf?ci_sign=50204fe3b7b73e3b0b616b2e8be0f02eced94911
MMBD2837LT1G
Виробник: ONSEMI
Category: SMD universal diodes
Description: Diode: switching; SMD; 75V; 0.15A; 4ns; SOT23; Ufmax: 1.2V; 225mW
Type of diode: switching
Mounting: SMD
Max. off-state voltage: 75V
Load current: 0.15A
Reverse recovery time: 4ns
Semiconductor structure: common cathode; double
Case: SOT23
Max. forward voltage: 1.2V
Kind of package: reel; tape
Capacitance: 4pF
Power dissipation: 0.225W
Max. load current: 0.45A
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NTHL185N60S5H nthl185n60s5h-d.pdf
Виробник: ONSEMI
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 600V; 15A; Idm: 53A; 116W; TO247-3
Mounting: THT
Case: TO247-3
Power dissipation: 116W
Kind of package: tube
Kind of channel: enhancement
Type of transistor: N-MOSFET
Gate charge: 25nC
On-state resistance: 0.185Ω
Drain current: 15A
Gate-source voltage: ±30V
Pulsed drain current: 53A
Drain-source voltage: 600V
Polarisation: unipolar
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NTMT185N60S5H ntmt185n60s5h-d.pdf
Виробник: ONSEMI
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 600V; 15A; Idm: 53A; 116W; TDFN4
Mounting: SMD
Case: TDFN4
Power dissipation: 116W
Kind of package: reel; tape
Kind of channel: enhancement
Type of transistor: N-MOSFET
Gate charge: 25nC
On-state resistance: 0.185Ω
Drain current: 15A
Gate-source voltage: ±30V
Pulsed drain current: 53A
Drain-source voltage: 600V
Polarisation: unipolar
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BC846ALT3G bc846alt1-d.pdf
Виробник: ONSEMI
Category: NPN SMD transistors
Description: Transistor: NPN; bipolar; 65V; 100mA; 225mW; SOT23; general purpose
Type of transistor: NPN
Polarisation: bipolar
Collector-emitter voltage: 65V
Collector current: 0.1A
Power dissipation: 0.225W
Case: SOT23
Current gain: 110
Mounting: SMD
Frequency: 100MHz
Application: general purpose
на замовлення 20000 шт:
термін постачання 21-30 дні (днів)
Кількість Ціна
10000+1.05 грн
Мінімальне замовлення: 10000
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NTMFS4C020NT1G ntmfs4c020n-d.pdf
Виробник: ONSEMI
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 30V; 370A; Idm: 900A; 161W; DFN5
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 30V
Drain current: 370A
Pulsed drain current: 900A
Power dissipation: 161W
Case: DFN5
Gate-source voltage: ±20V
On-state resistance: 670µΩ
Mounting: SMD
Gate charge: 63nC
Kind of package: reel; tape
Kind of channel: enhancement
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PZTA42T1G pVersion=0046&contRep=ZT&docId=005056AB752F1EE58DD196B51470E469&compId=PZTA42T1G.PDF?ci_sign=ecbfab87bf45a7a6ac20159ed8af43b24fcead2b
PZTA42T1G
Виробник: ONSEMI
Category: NPN SMD transistors
Description: Transistor: NPN; bipolar; 300V; 0.5A; 1.5W; SOT223-4,TO261-4
Type of transistor: NPN
Polarisation: bipolar
Collector-emitter voltage: 300V
Collector current: 0.5A
Power dissipation: 1.5W
Case: SOT223-4; TO261-4
Current gain: 40
Mounting: SMD
Kind of package: reel; tape
Frequency: 50MHz
на замовлення 497 шт:
термін постачання 21-30 дні (днів)
Кількість Ціна
17+26.68 грн
24+16.78 грн
50+12.63 грн
100+11.19 грн
250+9.67 грн
Мінімальне замовлення: 17
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SPZTA42T1G pzta42t1-d.pdf
Виробник: ONSEMI
Category: NPN SMD transistors
Description: Transistor: NPN; bipolar; 300V; 0.5A; 1.5W; SOT223-4,TO261-4
Type of transistor: NPN
Polarisation: bipolar
Collector-emitter voltage: 300V
Collector current: 0.5A
Power dissipation: 1.5W
Case: SOT223-4; TO261-4
Current gain: 40
Mounting: SMD
Kind of package: tape
Frequency: 50MHz
Application: automotive industry
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FCD1300N80Z fcd1300n80z-d.pdf
Виробник: ONSEMI
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 800V; 4A; Idm: 12A; 52W; DPAK
Mounting: SMD
Kind of channel: enhancement
Type of transistor: N-MOSFET
Polarisation: unipolar
Gate charge: 16.2nC
On-state resistance: 1.3Ω
Drain current: 4A
Pulsed drain current: 12A
Gate-source voltage: ±20V
Power dissipation: 52W
Drain-source voltage: 800V
Kind of package: reel; tape
Case: DPAK
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NCV4299CD133R2G ncv4299c-d.pdf
Виробник: ONSEMI
Category: LDO fixed voltage regulators
Description: IC: voltage regulator; LDO,linear,fixed; 3.3V; 0.15A; SO8; SMD
Mounting: SMD
Kind of voltage regulator: fixed; LDO; linear
Type of integrated circuit: voltage regulator
Output voltage: 3.3V
Output current: 0.15A
Number of channels: 1
Application: automotive industry
Kind of package: reel; tape
Case: SO8
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BZX84C10LT1G BZX84B_BZX84C.PDF
BZX84C10LT1G
Виробник: ONSEMI
Category: SMD Zener diodes
Description: Diode: Zener; 0.3W; 10V; SMD; reel,tape; SOT23; single diode; 0.2uA
Type of diode: Zener
Power dissipation: 0.3W
Zener voltage: 10V
Mounting: SMD
Tolerance: ±5%
Kind of package: reel; tape
Case: SOT23
Semiconductor structure: single diode
Leakage current: 0.2µA
Manufacturer series: BZX84C
на замовлення 5446 шт:
термін постачання 21-30 дні (днів)
Кількість Ціна
72+6.03 грн
112+3.60 грн
166+2.41 грн
196+2.05 грн
250+1.65 грн
500+1.41 грн
1000+1.22 грн
3000+1.20 грн
Мінімальне замовлення: 72
В кошику  од. на суму  грн.
2SB1123S-TD-E en1727-d.pdf
2SB1123S-TD-E
Виробник: ONSEMI
Category: PNP SMD transistors
Description: Transistor: PNP; bipolar; 50V; 2A; 0.5W; SOT89
Type of transistor: PNP
Polarisation: bipolar
Collector-emitter voltage: 50V
Collector current: 2A
Power dissipation: 0.5W
Case: SOT89
Mounting: SMD
Kind of package: reel; tape
Frequency: 150MHz
Current gain: 140...280
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NCP1012ST100T3G ncp1010-d.pdf
NCP1012ST100T3G
Виробник: ONSEMI
Category: Voltage regulators - PWM circuits
Description: IC: PMIC; AC/DC switcher,PWM controller; 250mA; 100kHz; Ch: 1; 11Ω
Type of integrated circuit: PMIC
Kind of integrated circuit: AC/DC switcher; PWM controller
Output current: 0.25A
Frequency: 0.1MHz
Mounting: SMD
Case: SOT223
Topology: flyback
Number of channels: 1
Operating temperature: -40...125°C
On-state resistance: 11Ω
Operating voltage: 8.5...10V DC
Duty cycle factor: 0...72%
Kind of package: reel; tape
Application: SMPS
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NCP1072STAT3G ncp1070-d.pdf
Виробник: ONSEMI
Category: Voltage regulators - DC/DC circuits
Description: IC: PMIC; AC/DC switcher,PWM controller; SOT223; flyback
Type of integrated circuit: PMIC
Kind of integrated circuit: AC/DC switcher; PWM controller
Output current: 0.25A
Frequency: 59...71kHz
Mounting: SMD
Case: SOT223
Topology: flyback
Number of channels: 1
Operating temperature: -40...125°C
On-state resistance: 16Ω
Operating voltage: 6.3...10V DC
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NCP1072STBT3G ncp1070-d.pdf
Виробник: ONSEMI
Category: Voltage regulators - DC/DC circuits
Description: IC: PMIC; AC/DC switcher,PWM controller; SOT223; flyback
Type of integrated circuit: PMIC
Kind of integrated circuit: AC/DC switcher; PWM controller
Output current: 0.25A
Frequency: 90...110kHz
Mounting: SMD
Case: SOT223
Topology: flyback
Number of channels: 1
Operating temperature: -40...125°C
On-state resistance: 16Ω
Operating voltage: 6.3...10V DC
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MC14517BDWR2G pVersion=0046&contRep=ZT&docId=005056AB281E1EDDA4E627B9CA56C0D3&compId=MC14517B-D.pdf?ci_sign=9274c0a28544a33b00e673fea76b574be22cb9b6
Виробник: ONSEMI
Category: Shift registers
Description: IC: digital; 64bit,static shift register; Ch: 2; CMOS; SMD; SO16WB
Type of integrated circuit: digital
Kind of integrated circuit: 64bit; static shift register
Number of channels: 2
Technology: CMOS
Mounting: SMD
Case: SO16WB
Family: HEF4000B
Operating temperature: -55...125°C
Supply voltage: 3...18V DC
Kind of package: reel; tape
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NCV59745AMW180TAG ncv59745-d.pdf
Виробник: ONSEMI
Category: LDO fixed voltage regulators
Description: IC: voltage regulator; LDO,linear,fixed; 1.8V; 3A; SMD; reel,tape
Kind of package: reel; tape
Kind of voltage regulator: fixed; LDO; linear
Type of integrated circuit: voltage regulator
Number of channels: 1
Output voltage: 1.8V
Output current: 3A
Application: automotive industry
Mounting: SMD
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NLU2G17AMX1TCG nlu2g17-d.pdf
Виробник: ONSEMI
Category: Buffers, transceivers, drivers
Description: IC: digital; buffer,non-inverting; Ch: 2; CMOS; SMD; ULLGA6; 40uA
Type of integrated circuit: digital
Kind of integrated circuit: buffer; non-inverting
Number of channels: 2
Technology: CMOS
Mounting: SMD
Case: ULLGA6
Supply voltage: 1.65...5.5V DC
Kind of package: reel; tape
Kind of input: with Schmitt trigger
Operating temperature: -55...125°C
Quiescent current: 40µA
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NLX2G17AMX1TCG NLX2G17_Rev2_Oct2012.pdf
Виробник: ONSEMI
Category: Buffers, transceivers, drivers
Description: IC: digital; buffer,non-inverting; Ch: 2; CMOS; SMD; ULLGA6
Type of integrated circuit: digital
Kind of integrated circuit: buffer; non-inverting
Number of channels: 2
Technology: CMOS
Mounting: SMD
Case: ULLGA6
Supply voltage: 1.65...5.5V DC
Kind of package: reel; tape
Kind of input: with Schmitt trigger
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1N5369BG pVersion=0046&contRep=ZT&docId=005056AB281E1EDFB4B706AA2B43C0D8&compId=1N53xx.PDF?ci_sign=2dd0986a0cecc581986dbc6f69ac36c2a8667bd6
Виробник: ONSEMI
Category: THT Zener diodes
Description: Diode: Zener; 5W; 51V; bulk; CASE017AA; single diode; 0.5uA; 1N53xxB
Mounting: THT
Tolerance: ±5%
Semiconductor structure: single diode
Type of diode: Zener
Leakage current: 0.5µA
Case: CASE017AA
Kind of package: bulk
Power dissipation: 5W
Zener voltage: 51V
Manufacturer series: 1N53xxB
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2SB1201S-TL-E en2112-d.html
Виробник: ONSEMI
Category: PNP SMD transistors
Description: Transistor: PNP; bipolar; 50V; 2A; 0.8W; DPAK
Mounting: SMD
Case: DPAK
Kind of package: reel; tape
Type of transistor: PNP
Power dissipation: 0.8W
Collector current: 2A
Collector-emitter voltage: 50V
Current gain: 140...280
Frequency: 150MHz
Polarisation: bipolar
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FDPF320N06L fdpf320n06l-d.pdf
FDPF320N06L
Виробник: ONSEMI
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 60V; 15A; Idm: 84A; 26W; TO220FP
Type of transistor: N-MOSFET
Technology: PowerTrench®
Polarisation: unipolar
Drain-source voltage: 60V
Drain current: 15A
Pulsed drain current: 84A
Power dissipation: 26W
Case: TO220FP
Gate-source voltage: ±20V
On-state resistance: 25mΩ
Mounting: THT
Gate charge: 30.2nC
Kind of package: tube
Kind of channel: enhancement
Features of semiconductor devices: logic level
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TCA0372BDWR2G tca0372-d.pdf
Виробник: ONSEMI
Category: SMD operational amplifiers
Description: IC: operational amplifier
Type of integrated circuit: operational amplifier
на замовлення 1000 шт:
термін постачання 21-30 дні (днів)
Кількість Ціна
1000+56.81 грн
Мінімальне замовлення: 1000
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NRVUB1620CTRT4G mur1620ctr-d.pdf
Виробник: ONSEMI
Category: SMD universal diodes
Description: Diode: rectifying; SMD; 200V; 8Ax2; 85ns; D2PAK; Ufmax: 1.2V
Type of diode: rectifying
Mounting: SMD
Max. off-state voltage: 200V
Load current: 8A x2
Reverse recovery time: 85ns
Semiconductor structure: common anode; double
Case: D2PAK
Max. forward voltage: 1.2V
Max. load current: 16A
Kind of package: reel; tape
Max. forward impulse current: 100A
Application: automotive industry
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NTTFS020N06CTAG NTTFS020N06C-D.PDF
Виробник: ONSEMI
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 60V; 27A; Idm: 128A; 15W; WDFN8
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 60V
Drain current: 27A
Pulsed drain current: 128A
Power dissipation: 15W
Case: WDFN8
Gate-source voltage: ±20V
On-state resistance: 20.3mΩ
Mounting: SMD
Gate charge: 5.8nC
Kind of package: reel; tape
Kind of channel: enhancement
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NVTFS020N06CTAG NVTFS020N06C-D.PDF
Виробник: ONSEMI
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 60V; 27A; Idm: 128A; 15W; WDFN8
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 60V
Drain current: 27A
Pulsed drain current: 128A
Power dissipation: 15W
Case: WDFN8
Gate-source voltage: ±20V
On-state resistance: 20.3mΩ
Mounting: SMD
Gate charge: 5.8nC
Kind of package: reel; tape
Kind of channel: enhancement
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NVTFWS020N06CTAG NVTFS020N06C-D.PDF
Виробник: ONSEMI
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 60V; 27A; Idm: 128A; 15W; WDFNW8
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 60V
Drain current: 27A
Pulsed drain current: 128A
Power dissipation: 15W
Case: WDFNW8
Gate-source voltage: ±20V
On-state resistance: 20.3mΩ
Mounting: SMD
Gate charge: 5.8nC
Kind of package: reel; tape
Kind of channel: enhancement
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MUR820G description pVersion=0046&contRep=ZT&docId=005056AB752F1EE584E78E58FD650469&compId=MUR820G.PDF?ci_sign=69c6ffc89ef598cdd231e5009660967438bd635c
MUR820G
Виробник: ONSEMI
Category: THT universal diodes
Description: Diode: rectifying; THT; 200V; 8A; tube; Ifsm: 100A; TO220AC; 35ns
Type of diode: rectifying
Mounting: THT
Max. off-state voltage: 200V
Load current: 8A
Semiconductor structure: single diode
Kind of package: tube
Max. forward impulse current: 100A
Case: TO220AC
Max. forward voltage: 0.975V
Max. load current: 16A
Reverse recovery time: 35ns
Heatsink thickness: max. 1.4mm
на замовлення 682 шт:
термін постачання 21-30 дні (днів)
Кількість Ціна
7+70.58 грн
10+54.59 грн
50+45.00 грн
100+41.24 грн
250+36.93 грн
500+35.97 грн
Мінімальне замовлення: 7
В кошику  од. на суму  грн.
MMSZ4702T1G pVersion=0046&contRep=ZT&docId=005056AB281E1EDFB4CFEB7388A7C0D8&compId=MMSZ4xxxT1G.PDF?ci_sign=a85907a4b31579eb401f684e4c002657dc7dfe7a
MMSZ4702T1G
Виробник: ONSEMI
Category: SMD Zener diodes
Description: Diode: Zener; 0.5W; 15V; SMD; reel,tape; SOD123; single diode
Mounting: SMD
Tolerance: ±5%
Kind of package: reel; tape
Semiconductor structure: single diode
Type of diode: Zener
Leakage current: 50nA
Power dissipation: 0.5W
Zener voltage: 15V
Case: SOD123
Manufacturer series: MMSZ4xxT1G
на замовлення 6556 шт:
термін постачання 21-30 дні (днів)
Кількість Ціна
63+6.89 грн
97+4.16 грн
120+3.36 грн
139+2.88 грн
165+2.43 грн
250+1.94 грн
500+1.63 грн
1000+1.36 грн
Мінімальне замовлення: 63
В кошику  од. на суму  грн.
1N5934BG pVersion=0046&contRep=ZT&docId=005056AB281E1EDFB4B76911095C60D8&compId=1N59xxB.pdf?ci_sign=08740ab8d99b6d9aec88108daea62be4df615f0c
1N5934BG
Виробник: ONSEMI
Category: THT Zener diodes
Description: Diode: Zener; 3W; 24V; bulk; CASE59; single diode; 1uA; 1N59xxB
Type of diode: Zener
Power dissipation: 3W
Zener voltage: 24V
Kind of package: bulk
Case: CASE59
Mounting: THT
Tolerance: ±5%
Semiconductor structure: single diode
Manufacturer series: 1N59xxB
Leakage current: 1µA
на замовлення 1053 шт:
термін постачання 21-30 дні (днів)
Кількість Ціна
17+26.68 грн
20+20.46 грн
22+18.30 грн
100+11.99 грн
250+10.31 грн
Мінімальне замовлення: 17
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1SMA5934BT3G pVersion=0046&contRep=ZT&docId=005056AB90B41EDC81949BABC3B320C7&compId=1SMA59xxBT3.PDF?ci_sign=ae78e9fa686988a769322b3766b51c193588ea67
1SMA5934BT3G
Виробник: ONSEMI
Category: SMD Zener diodes
Description: Diode: Zener; 1.5W; 24V; SMD; reel,tape; SMA; single diode
Type of diode: Zener
Power dissipation: 1.5W
Zener voltage: 24V
Mounting: SMD
Tolerance: ±5%
Kind of package: reel; tape
Case: SMA
Semiconductor structure: single diode
Manufacturer series: 1SMA59xxBT3G
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MMBZ5248BLT1G pVersion=0046&contRep=ZT&docId=005056AB281E1EDFB4CAA5C0BD20A0D8&compId=MMBZ52xxBLT1G.PDF?ci_sign=e66b6ae8d428f13192cf8029f8987439859092fc
MMBZ5248BLT1G
Виробник: ONSEMI
Category: SMD Zener diodes
Description: Diode: Zener; 0.3W; 18V; SMD; reel,tape; SOT23; single diode; 0.1uA
Type of diode: Zener
Power dissipation: 0.3W
Zener voltage: 18V
Mounting: SMD
Tolerance: ±5%
Kind of package: reel; tape
Case: SOT23
Semiconductor structure: single diode
Leakage current: 0.1µA
Manufacturer series: MMBZ52xxBLT1G
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SZMMBZ5248BLT1G pVersion=0046&contRep=ZT&docId=005056AB281E1EDFB4CAA5C0BD20A0D8&compId=MMBZ52xxBLT1G.PDF?ci_sign=e66b6ae8d428f13192cf8029f8987439859092fc
Виробник: ONSEMI
Category: SMD Zener diodes
Description: Diode: Zener; 0.3W; 18V; SMD; reel,tape; SOT23; single diode; 0.1uA
Type of diode: Zener
Power dissipation: 0.3W
Zener voltage: 18V
Mounting: SMD
Tolerance: ±5%
Kind of package: reel; tape
Case: SOT23
Semiconductor structure: single diode
Leakage current: 0.1µA
Manufacturer series: MMBZ52xxBLT1G
Application: automotive industry
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MOC3052M MOC3052M-ONS.PDF
MOC3052M
Виробник: ONSEMI
Category: Optotriacs
Description: Optotriac; 5.3kV; Uout: 600V; DIP6; MOC3052M
Mounting: THT
Trigger current: 10mA
Output voltage: 600V
Insulation voltage: 5.3kV
Manufacturer series: MOC3052M
Case: DIP6
Type of optocoupler: optotriac
Kind of output: without zero voltage crossing driver
на замовлення 73 шт:
термін постачання 21-30 дні (днів)
Кількість Ціна
7+65.42 грн
11+39.16 грн
50+33.33 грн
Мінімальне замовлення: 7
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KSC5502DTM pVersion=0046&contRep=ZT&docId=005056AB281E1EDEBCE428E7376320D6&compId=KSC5502D.pdf?ci_sign=7139fb7979a4edd6f91a986578b7a7115e735a86
Виробник: ONSEMI
Category: NPN SMD transistors
Description: Transistor: NPN; bipolar; 600V; 2A; 87.83W; DPAK
Type of transistor: NPN
Polarisation: bipolar
Collector-emitter voltage: 600V
Collector current: 2A
Power dissipation: 87.83W
Case: DPAK
Pulsed collector current: 4A
Current gain: 12...30
Mounting: SMD
Kind of package: reel; tape
Features of semiconductor devices: integrated anti-parallel diode
Frequency: 11MHz
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KSC5502TU pVersion=0046&contRep=ZT&docId=005056AB281E1EDEBCE42C283A4B80D6&compId=KSC5502.pdf?ci_sign=d091db68383e1ae3b7b0092cfb80fe5c4d71e12b
Виробник: ONSEMI
Category: NPN THT transistors
Description: Transistor: NPN; bipolar; 600V; 2A; 50W; TO220AB
Type of transistor: NPN
Polarisation: bipolar
Collector-emitter voltage: 600V
Collector current: 2A
Power dissipation: 50W
Case: TO220AB
Pulsed collector current: 4A
Current gain: 12...30
Mounting: THT
Kind of package: tube
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BAV99LT3G pVersion=0046&contRep=ZT&docId=005056AB90B41ED9B3F68A2206D2C0C4&compId=BAV99LT3G.PDF?ci_sign=5d3fb25daa8884041a840340031ab2de05997614
BAV99LT3G
Виробник: ONSEMI
Category: SMD universal diodes
Description: Diode: switching; SMD; 100V; 0.215A; 6ns; SOT23; Ufmax: 1.75V; 225mW
Type of diode: switching
Mounting: SMD
Max. off-state voltage: 100V
Load current: 0.215A
Reverse recovery time: 6ns
Semiconductor structure: double series
Capacitance: 1.5pF
Case: SOT23
Max. forward voltage: 1.75V
Max. forward impulse current: 2A
Power dissipation: 0.225W
Kind of package: reel; tape
Max. load current: 0.45A
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SBAV99LT3G bav99lt1-d.pdf
SBAV99LT3G
Виробник: ONSEMI
Category: SMD universal diodes
Description: Diode: switching; SMD; 100V; 0.215A; 6ns; SOT23; Ufmax: 1.25V; 300mW
Type of diode: switching
Mounting: SMD
Max. off-state voltage: 100V
Load current: 0.215A
Reverse recovery time: 6ns
Semiconductor structure: double series
Capacitance: 1.5pF
Case: SOT23
Max. forward voltage: 1.25V
Max. forward impulse current: 2A
Leakage current: 50µA
Power dissipation: 0.3W
Kind of package: reel; tape
Application: automotive industry
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1N5231BTR 1N52xxB.PDF
Виробник: ONSEMI
Category: THT Zener diodes
Description: Diode: Zener; 0.5W; 5.1V; reel,tape; CASE017AG; single diode; 5uA
Type of diode: Zener
Power dissipation: 0.5W
Zener voltage: 5.1V
Kind of package: reel; tape
Case: CASE017AG
Mounting: THT
Tolerance: ±5%
Semiconductor structure: single diode
Leakage current: 5µA
Manufacturer series: 1N52xxB
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LM2575T-3.3G pVersion=0046&contRep=ZT&docId=005056AB752F1ED68AAB2A8FFD09BE21&compId=LM2575-ON-DTE.PDF?ci_sign=91792adb27eab164ca8ff9fb230c949c2520fd88
LM2575T-3.3G
Виробник: ONSEMI
Category: Voltage regulators - DC/DC circuits
Description: PMIC; DC/DC converter; Uin: 4.75÷40VDC; Uout: 3.3VDC; 1A; TO220-5
Type of integrated circuit: PMIC
Kind of integrated circuit: DC/DC converter
Input voltage: 4.75...40V DC
Output voltage: 3.3V DC
Output current: 1A
Case: TO220-5
Mounting: THT
Frequency: 42...63kHz
Topology: buck
Number of channels: 1
Operating temperature: -40...125°C
Kind of package: tube
на замовлення 41 шт:
термін постачання 21-30 дні (днів)
Кількість Ціна
3+188.51 грн
10+115.89 грн
Мінімальне замовлення: 3
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LM2575TV-ADJG lm2575-d.pdf
Виробник: ONSEMI
Category: Voltage regulators - DC/DC circuits
Description: PMIC; DC/DC converter; TO220-5; THT; tube
Type of integrated circuit: PMIC
Kind of integrated circuit: DC/DC converter
Case: TO220-5
Mounting: THT
Kind of package: tube
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MMSZ5248B pVersion=0046&contRep=ZT&docId=005056AB281E1EDFB4D04381F20DC0D8&compId=MMSZ52xxT1G.PDF?ci_sign=fdb8f3e427e766b88a37e5251c191ddf82ded01f
Виробник: ONSEMI
Category: SMD Zener diodes
Description: Diode: Zener; 0.5W; 18V; SMD; reel,tape; SOD123; single diode
Type of diode: Zener
Power dissipation: 0.5W
Zener voltage: 18V
Mounting: SMD
Tolerance: ±5%
Kind of package: reel; tape
Case: SOD123
Semiconductor structure: single diode
Manufacturer series: MMSZ52xxB
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MMBD1204 ONSM-S-A0003587619-1.pdf?t.download=true&u=5oefqw
MMBD1204
Виробник: ONSEMI
Category: SMD universal diodes
Description: Diode: switching; SMD; 100V; 0.2A; 4ns; SOT23; Ufmax: 1.1V; Ifsm: 2A
Type of diode: switching
Mounting: SMD
Max. off-state voltage: 100V
Load current: 0.2A
Reverse recovery time: 4ns
Semiconductor structure: common cathode; double
Case: SOT23
Max. forward voltage: 1.1V
Kind of package: reel; tape
Leakage current: 0.1mA
Capacitance: 2pF
Power dissipation: 0.35W
Max. forward impulse current: 2A
на замовлення 1180 шт:
термін постачання 21-30 дні (днів)
Кількість Ціна
32+13.77 грн
50+8.07 грн
73+5.51 грн
100+4.68 грн
250+3.80 грн
500+3.28 грн
1000+2.84 грн
Мінімальне замовлення: 32
В кошику  од. на суму  грн.
NVTFS003N04CTAG nvtfs003n04c-d.pdf
Виробник: ONSEMI
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 40V; 103A; Idm: 484A; 22W; WDFN8
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 40V
Drain current: 103A
Pulsed drain current: 484A
Power dissipation: 22W
Case: WDFN8
Gate-source voltage: ±20V
On-state resistance: 3.5mΩ
Mounting: SMD
Gate charge: 23nC
Kind of package: reel; tape
Kind of channel: enhancement
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NVTFS008N04CTAG nvtfs008n04c-d.pdf
Виробник: ONSEMI
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 40V; 48A; Idm: 193A; 12W; WDFN8
Case: WDFN8
Mounting: SMD
Kind of package: reel; tape
Type of transistor: N-MOSFET
Gate-source voltage: ±20V
Gate charge: 10nC
On-state resistance: 8.5mΩ
Power dissipation: 12W
Drain current: 48A
Drain-source voltage: 40V
Pulsed drain current: 193A
Polarisation: unipolar
Kind of channel: enhancement
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NVTFS027N10MCLTAG nvtfs027n10mcl-d.pdf
Виробник: ONSEMI
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 100V; 28A; Idm: 119A; 23W; WDFN8
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 100V
Drain current: 28A
Pulsed drain current: 119A
Power dissipation: 23W
Case: WDFN8
Gate-source voltage: ±20V
On-state resistance: 26mΩ
Mounting: SMD
Gate charge: 11.5nC
Kind of package: reel; tape
Kind of channel: enhancement
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2SC3646S-TD-E 2sa1416jp-d.pdf
2SC3646S-TD-E
Виробник: ONSEMI
Category: NPN SMD transistors
Description: Transistor: NPN; bipolar; 100V; 1A; 0.5W; SOT89
Polarisation: bipolar
Mounting: SMD
Type of transistor: NPN
Kind of package: reel; tape
Case: SOT89
Power dissipation: 0.5W
Collector current: 1A
Collector-emitter voltage: 100V
Current gain: 140...280
Frequency: 120MHz
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S3M pVersion=0046&contRep=ZT&docId=005056AB752F1EE784EFC7B91ED14745&compId=S3A.pdf?ci_sign=4cb59c823e1cdd51a4b5ea04ea7f6d2110e07cfe
S3M
Виробник: ONSEMI
Category: SMD universal diodes
Description: Diode: rectifying; SMD; 1kV; 3A; SMC; Ifsm: 100A; 2.6W; reel,tape
Type of diode: rectifying
Case: SMC
Mounting: SMD
Max. off-state voltage: 1kV
Load current: 3A
Semiconductor structure: single diode
Capacitance: 60pF
Max. forward impulse current: 100A
Kind of package: reel; tape
Power dissipation: 2.6W
на замовлення 2620 шт:
термін постачання 21-30 дні (днів)
Кількість Ціна
12+36.15 грн
17+23.58 грн
50+17.42 грн
78+12.07 грн
214+11.43 грн
1000+11.03 грн
Мінімальне замовлення: 12
В кошику  од. на суму  грн.
1N5360BG pVersion=0046&contRep=ZT&docId=005056AB281E1EDFB4B706AA2B43C0D8&compId=1N53xx.PDF?ci_sign=2dd0986a0cecc581986dbc6f69ac36c2a8667bd6
Виробник: ONSEMI
Category: THT Zener diodes
Description: Diode: Zener; 5W; 25V; bulk; CASE017AA; single diode; 0.5uA; 1N53xxB
Type of diode: Zener
Power dissipation: 5W
Zener voltage: 25V
Kind of package: bulk
Case: CASE017AA
Mounting: THT
Tolerance: ±5%
Semiconductor structure: single diode
Leakage current: 0.5µA
Manufacturer series: 1N53xxB
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1N5360BRLG pVersion=0046&contRep=ZT&docId=005056AB281E1EDFB4B706AA2B43C0D8&compId=1N53xx.PDF?ci_sign=2dd0986a0cecc581986dbc6f69ac36c2a8667bd6
Виробник: ONSEMI
Category: THT Zener diodes
Description: Diode: Zener; 5W; 25V; reel,tape; CASE017AA; single diode; 0.5uA
Type of diode: Zener
Power dissipation: 5W
Zener voltage: 25V
Kind of package: reel; tape
Case: CASE017AA
Mounting: THT
Tolerance: ±5%
Semiconductor structure: single diode
Leakage current: 0.5µA
Manufacturer series: 1N53xxB
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NJL0281DG njl0281d-d.pdf
Виробник: ONSEMI
Category: NPN THT transistors
Description: Transistor: NPN + diode; bipolar; 260V; 15A; 180W; TO264-5
Type of transistor: NPN + diode
Polarisation: bipolar
Power dissipation: 180W
Case: TO264-5
Mounting: THT
Kind of package: tube
Collector current: 15A
Collector-emitter voltage: 260V
Frequency: 30MHz
Current gain: 75...150
Pulsed collector current: 25A
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NCP11187A065PG ncp11184-d.pdf
Виробник: ONSEMI
Category: Voltage regulators - DC/DC circuits
Description: IC: PMIC; AC/DC switcher,PWM controller; DIP7; flyback; 7.8÷26VDC
Case: DIP7
Topology: flyback
Mounting: SMD
Type of integrated circuit: PMIC
Operating temperature: -40...125°C
On-state resistance: 0.87Ω
Number of channels: 1
Operating voltage: 7.8...26V DC
Kind of integrated circuit: AC/DC switcher; PWM controller
Frequency: 62...68kHz
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NCP11187A100PG ncp11184-d.pdf
Виробник: ONSEMI
Category: Voltage regulators - DC/DC circuits
Description: IC: PMIC; AC/DC switcher,PWM controller; DIP7; flyback; 7.8÷26VDC
Case: DIP7
Topology: flyback
Mounting: SMD
Type of integrated circuit: PMIC
Operating temperature: -40...125°C
On-state resistance: 0.87Ω
Number of channels: 1
Operating voltage: 7.8...26V DC
Kind of integrated circuit: AC/DC switcher; PWM controller
Frequency: 95...105kHz
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FFSP3065A pVersion=0046&contRep=ZT&docId=005056AB281E1EDC95E9F0BD9FFB20CE&compId=FFSP3065A.pdf?ci_sign=ae6f21021727f98b886609f3ebf329b4107f5380
FFSP3065A
Виробник: ONSEMI
Category: THT Schottky diodes
Description: Diode: Schottky rectifying; SiC; THT; 650V; 30A; TO220-2; Ir: 600uA
Case: TO220-2
Mounting: THT
Kind of package: tube
Technology: SiC
Max. forward voltage: 2.4V
Type of diode: Schottky rectifying
Load current: 30A
Power dissipation: 40W
Max. load current: 75A
Max. forward impulse current: 150A
Semiconductor structure: single diode
Max. off-state voltage: 650V
Leakage current: 0.6mA
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FFSP3065B ffsp3065b-d.pdf
Виробник: ONSEMI
Category: THT Schottky diodes
Description: Diode: Schottky rectifying; SiC; THT; 650V; 30A; TO220-2; tube
Case: TO220-2
Mounting: THT
Kind of package: tube
Technology: SiC
Max. forward voltage: 1.7V
Type of diode: Schottky rectifying
Load current: 30A
Semiconductor structure: single diode
Max. off-state voltage: 650V
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MC74VHCT138ADTRG pVersion=0046&contRep=ZT&docId=005056AB281E1EDDA4E63369DB2B60D3&compId=MC74VHCT138A-D.pdf?ci_sign=3abfdf0569c893dab664b8bd62ba19e1777908c4
Виробник: ONSEMI
Category: Decoders, multiplexers, switches
Description: IC: digital; 3 to 8 line,decoder; Ch: 1; IN: 6; CMOS,TTL; SMD; VHCT
Type of integrated circuit: digital
Kind of integrated circuit: 3 to 8 line; decoder
Number of channels: 1
Technology: CMOS; TTL
Mounting: SMD
Case: TSSOP16
Family: VHCT
Operating temperature: -55...125°C
Manufacturer series: VHCT
Number of inputs: 6
Kind of package: reel; tape
Supply voltage: 3...5.5V DC
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MGSF1N03LT1G mgsf1n03lt1-d.pdf
MGSF1N03LT1G
Виробник: ONSEMI
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 30V; 2.1A; 690mW; SOT23
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 30V
Drain current: 2.1A
Power dissipation: 0.69W
Case: SOT23
Gate-source voltage: ±20V
On-state resistance: 80mΩ
Mounting: SMD
Kind of package: reel; tape
Kind of channel: enhancement
Gate charge: 6nC
на замовлення 2893 шт:
термін постачання 21-30 дні (днів)
Кількість Ціна
28+15.49 грн
39+10.31 грн
50+8.55 грн
100+7.91 грн
250+7.27 грн
500+6.71 грн
1000+6.31 грн
Мінімальне замовлення: 28
В кошику  од. на суму  грн.
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