| Фото | Назва | Виробник | Інформація |
Доступність |
Ціна |
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MMSZ5241BT1G | ONSEMI |
Category: SMD Zener diodesDescription: Diode: Zener; 0.5W; 11V; SMD; reel,tape; SOD123; single diode Type of diode: Zener Power dissipation: 0.5W Zener voltage: 11V Mounting: SMD Tolerance: ±5% Kind of package: reel; tape Case: SOD123 Semiconductor structure: single diode Manufacturer series: MMSZ52xxB |
на замовлення 845 шт: термін постачання 21-30 дні (днів) |
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| MURHD560T4G | ONSEMI |
Category: SMD universal diodesDescription: Diode: rectifying; SMD; 600V; 5A; 30ns; DPAK; reel,tape Type of diode: rectifying Mounting: SMD Max. off-state voltage: 0.6kV Load current: 5A Semiconductor structure: single diode Case: DPAK Kind of package: reel; tape Reverse recovery time: 30ns |
товару немає в наявності |
В кошику од. на суму грн. | |||||||||||||||
| MURHD560W1T4G | ONSEMI |
Category: SMD universal diodesDescription: Diode: rectifying; SMD; 600V; 5A; 30ns; DPAK; reel,tape Type of diode: rectifying Mounting: SMD Max. off-state voltage: 0.6kV Load current: 5A Semiconductor structure: single diode Case: DPAK Kind of package: reel; tape Reverse recovery time: 30ns |
товару немає в наявності |
В кошику од. на суму грн. | |||||||||||||||
| SSURHD8560W1T4G | ONSEMI |
Category: SMD universal diodesDescription: Diode: rectifying; SMD; 600V; 5A; DPAK; reel,tape Type of diode: rectifying Mounting: SMD Max. off-state voltage: 0.6kV Load current: 5A Semiconductor structure: single diode Case: DPAK Kind of package: reel; tape Application: automotive industry |
товару немає в наявності |
В кошику од. на суму грн. | |||||||||||||||
| DTA143EET1G | ONSEMI |
Category: PNP SMD transistorsDescription: Transistor: PNP; bipolar; BRT; 50V; 100mA; 300mW; SC75,SOT416 Type of transistor: PNP Polarisation: bipolar Kind of transistor: BRT Collector-emitter voltage: 50V Collector current: 0.1A Power dissipation: 0.3W Case: SC75; SOT416 Current gain: 15...27 Mounting: SMD Kind of package: reel; tape Base resistor: 4.7kΩ Base-emitter resistor: 4.7kΩ Quantity in set/package: 3000pcs. |
товару немає в наявності |
В кошику од. на суму грн. | |||||||||||||||
| DTA143EM3T5G | ONSEMI |
Category: PNP SMD transistorsDescription: Transistor: PNP; bipolar; BRT; 50V; 100mA; 600mW; SOT723; R1: 4.7kΩ Type of transistor: PNP Polarisation: bipolar Kind of transistor: BRT Collector-emitter voltage: 50V Collector current: 0.1A Power dissipation: 0.6W Case: SOT723 Current gain: 15...27 Mounting: SMD Kind of package: reel; tape Base resistor: 4.7kΩ Base-emitter resistor: 4.7kΩ Quantity in set/package: 8000pcs. |
товару немає в наявності |
В кошику од. на суму грн. | |||||||||||||||
| DTA143TET1G | ONSEMI |
Category: PNP SMD transistorsDescription: Transistor: PNP; bipolar; BRT; 50V; 100mA; 300mW; SC75,SOT416; 4.7kΩ Type of transistor: PNP Polarisation: bipolar Kind of transistor: BRT Collector-emitter voltage: 50V Collector current: 0.1A Power dissipation: 0.3W Case: SC75; SOT416 Current gain: 160...250 Mounting: SMD Kind of package: reel; tape Base resistor: 4.7kΩ Quantity in set/package: 3000pcs. |
товару немає в наявності |
В кошику од. на суму грн. | |||||||||||||||
| DTA143ZM3T5G | ONSEMI |
Category: PNP SMD transistorsDescription: Transistor: PNP; bipolar; BRT; 50V; 100mA; 600mW; SOT723; R1: 4.7kΩ Type of transistor: PNP Polarisation: bipolar Kind of transistor: BRT Collector-emitter voltage: 50V Collector current: 0.1A Power dissipation: 0.6W Case: SOT723 Current gain: 80...140 Mounting: SMD Kind of package: reel; tape Base resistor: 4.7kΩ Base-emitter resistor: 47kΩ Quantity in set/package: 8000pcs. |
товару немає в наявності |
В кошику од. на суму грн. | |||||||||||||||
| FODM3022-NF098 | ONSEMI |
Category: OptotriacsDescription: Optotriac; 3.75kV; Uout: 400V; triac; MFP4; Ch: 1; FODM302x; tube Type of optocoupler: optotriac Mounting: SMD Number of channels: 1 Kind of output: triac Insulation voltage: 3.75kV Case: MFP4 Manufacturer series: FODM302x Max. off-state voltage: 3V Output voltage: 400V Kind of package: tube |
товару немає в наявності |
В кошику од. на суму грн. | |||||||||||||||
| FODM3023-NF098 | ONSEMI |
Category: OptotriacsDescription: Optotriac; 3.75kV; Uout: 400V; triac; MFP4; Ch: 1; FODM302x; tube Manufacturer series: FODM302x Kind of output: triac Number of channels: 1 Max. off-state voltage: 3V Output voltage: 400V Insulation voltage: 3.75kV Case: MFP4 Type of optocoupler: optotriac Mounting: SMD Kind of package: tube |
товару немає в наявності |
В кошику од. на суму грн. | |||||||||||||||
| FODM3022R2-NF098 | ONSEMI |
Category: OptotriacsDescription: Optotriac; 3.75kV; Uout: 400V; triac; MFP4; Ch: 1; FODM302x Manufacturer series: FODM302x Kind of output: triac Number of channels: 1 Max. off-state voltage: 3V Output voltage: 400V Insulation voltage: 3.75kV Case: MFP4 Type of optocoupler: optotriac Mounting: SMD Kind of package: reel; tape |
товару немає в наявності |
В кошику од. на суму грн. | |||||||||||||||
| FODM3022R2V-NF098 | ONSEMI |
Category: OptotriacsDescription: Optotriac; 3.75kV; Uout: 400V; triac; MFP4; Ch: 1; FODM302x Manufacturer series: FODM302x Kind of output: triac Conform to the norm: VDE Number of channels: 1 Max. off-state voltage: 3V Output voltage: 400V Insulation voltage: 3.75kV Case: MFP4 Type of optocoupler: optotriac Mounting: SMD Kind of package: reel; tape |
товару немає в наявності |
В кошику од. на суму грн. | |||||||||||||||
| FODM3023R2-NF098 | ONSEMI |
Category: OptotriacsDescription: Optotriac; 3.75kV; Uout: 400V; MFP4; Ch: 1; FODM302x; 10V/μs Manufacturer series: FODM302x Kind of output: triac; without zero voltage crossing driver Trigger current: 5mA Number of channels: 1 Max. off-state voltage: 3V Slew rate: 10V/μs Output voltage: 400V Insulation voltage: 3.75kV Case: MFP4 Type of optocoupler: optotriac Mounting: SMD |
товару немає в наявності |
В кошику од. на суму грн. | |||||||||||||||
| RURG5060-F085 | ONSEMI |
Category: THT universal diodesDescription: Diode: rectifying; THT; 600V; 50A; tube; TO247-2 Type of diode: rectifying Semiconductor structure: single diode Mounting: THT Case: TO247-2 Kind of package: tube Load current: 50A Application: automotive industry Max. off-state voltage: 0.6kV |
товару немає в наявності |
В кошику од. на суму грн. | |||||||||||||||
| FJL4315OTU | ONSEMI |
Category: NPN THT transistorsDescription: Transistor: NPN; bipolar; 250V; 17A; 150W; TO264 Type of transistor: NPN Polarisation: bipolar Collector-emitter voltage: 250V Collector current: 17A Power dissipation: 150W Case: TO264 Current gain: 55...160 Mounting: THT Kind of package: tube Frequency: 30MHz |
товару немає в наявності |
В кошику од. на суму грн. | |||||||||||||||
| MJW3281AG | ONSEMI |
Category: NPN THT transistorsDescription: Transistor: NPN; bipolar; 230V; 15A; 200W; TO247-3 Type of transistor: NPN Polarisation: bipolar Collector-emitter voltage: 230V Collector current: 15A Power dissipation: 200W Case: TO247-3 Mounting: THT Kind of package: tube |
товару немає в наявності |
В кошику од. на суму грн. | |||||||||||||||
| DTC115TET1G | ONSEMI |
Category: NPN SMD transistorsDescription: Transistor: NPN; bipolar; BRT; 50V; 100mA; 300mW; SC75,SOT416; 100kΩ Type of transistor: NPN Polarisation: bipolar Kind of transistor: BRT Collector-emitter voltage: 50V Collector current: 0.1A Power dissipation: 0.3W Case: SC75; SOT416 Current gain: 160...350 Mounting: SMD Quantity in set/package: 3000pcs. Kind of package: reel; tape Base resistor: 100kΩ |
товару немає в наявності |
В кошику од. на суму грн. | |||||||||||||||
| MURS480ET3G | ONSEMI |
Category: SMD universal diodesDescription: Diode: rectifying; SMD; 800V; 4A; 100ns; SMC; Ufmax: 1.53V; Ifsm: 70A Mounting: SMD Type of diode: rectifying Kind of package: reel; tape Semiconductor structure: single diode Features of semiconductor devices: ultrafast switching Reverse recovery time: 100ns Max. forward voltage: 1.53V Load current: 4A Max. forward impulse current: 70A Max. off-state voltage: 0.8kV Case: SMC |
товару немає в наявності |
В кошику од. на суму грн. | |||||||||||||||
| MMSZ4680ET1G | ONSEMI |
Category: SMD Zener diodesDescription: Diode: Zener; 0.5W; 2.2V; SMD; reel,tape; SOD123; single diode Power dissipation: 0.5W Case: SOD123 Mounting: SMD Semiconductor structure: single diode Zener voltage: 2.2V Tolerance: ±5% Type of diode: Zener Kind of package: reel; tape |
товару немає в наявності |
В кошику од. на суму грн. | |||||||||||||||
|
4N29M | ONSEMI |
Category: Optocouplers - analog outputDescription: Optocoupler; THT; Ch: 1; OUT: Darlington; Uinsul: 4.17kV; DIP6 Type of optocoupler: optocoupler Mounting: THT Number of channels: 1 Kind of output: Darlington Insulation voltage: 4.17kV CTR@If: 100%@10mA Case: DIP6 Turn-on time: 5µs Turn-off time: 40µs Max. off-state voltage: 3V |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||||||||
| 4N29SR2M | ONSEMI |
Category: Optocouplers - analog outputDescription: Optocoupler; SMD; Ch: 1; OUT: Darlington; Uinsul: 4.17kV; Uce: 30V Type of optocoupler: optocoupler Mounting: SMD Number of channels: 1 Kind of output: Darlington Insulation voltage: 4.17kV CTR@If: 100%@10mA Collector-emitter voltage: 30V Case: PDIP6 Turn-on time: 5µs Turn-off time: 40µs Max. off-state voltage: 3V Manufacturer series: 4N2X |
товару немає в наявності |
В кошику од. на суму грн. | |||||||||||||||
| NTTBC070NP10M5L | ONSEMI |
Category: Multi channel transistorsDescription: Transistor: N/P-MOSFET; unipolar; complementary pair; 100/-100V Type of transistor: N/P-MOSFET Polarisation: unipolar Kind of transistor: complementary pair Drain-source voltage: 100/-100V Drain current: 9.5/-5A Pulsed drain current: 33A Power dissipation: 14/10W Gate-source voltage: ±20V On-state resistance: 70/186mΩ Mounting: SMD Gate charge: 5.6/7.3nC Kind of package: reel; tape Kind of channel: enhancement |
товару немає в наявності |
В кошику од. на суму грн. | |||||||||||||||
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FSL146MRBN | ONSEMI |
Category: Voltage regulators - PWM circuitsDescription: IC: PMIC; PWM controller; 1.5A; 650V; 67kHz; Ch: 1; DIP8; flyback Output voltage: 650V Power: 26W Operating temperature: -40...125°C Number of channels: 1 Output current: 1.5A On-state resistance: 2.6Ω Operating voltage: 7.5...24.5V DC Duty cycle factor: 61...73% Input voltage: 85...265V Frequency: 67kHz Case: DIP8 Topology: flyback Mounting: THT Type of integrated circuit: PMIC Kind of integrated circuit: PWM controller |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||||||||
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MMBTA56WT1G | ONSEMI |
Category: PNP SMD transistorsDescription: Transistor: PNP; bipolar; 80V; 0.5A; 0.15W; SC70,SOT323 Type of transistor: PNP Polarisation: bipolar Collector-emitter voltage: 80V Collector current: 0.5A Power dissipation: 0.15W Case: SC70; SOT323 Current gain: 100 Mounting: SMD Kind of package: reel; tape Frequency: 50MHz |
на замовлення 551 шт: термін постачання 21-30 дні (днів) |
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SMMBTA56LT1G | ONSEMI |
Category: PNP SMD transistorsDescription: Transistor: PNP; bipolar; 80V; 0.5A; 0.225W; SOT23,TO236AB Type of transistor: PNP Polarisation: bipolar Collector-emitter voltage: 80V Collector current: 0.5A Power dissipation: 0.225W Case: SOT23; TO236AB Current gain: 100 Mounting: SMD Kind of package: reel; tape Frequency: 50MHz Application: automotive industry |
на замовлення 468 шт: термін постачання 21-30 дні (днів) |
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| SMMBTA56LT3G | ONSEMI |
Category: PNP SMD transistorsDescription: Transistor: PNP; bipolar; 80V; 0.5A; 0.225W; SOT23,TO236AB Type of transistor: PNP Polarisation: bipolar Collector-emitter voltage: 80V Collector current: 0.5A Power dissipation: 0.225W Case: SOT23; TO236AB Current gain: 100 Mounting: SMD Kind of package: reel; tape Frequency: 50MHz Application: automotive industry |
товару немає в наявності |
В кошику од. на суму грн. | |||||||||||||||
| SMMBTA56WT1G | ONSEMI |
Category: PNP SMD transistorsDescription: Transistor: PNP; bipolar; 80V; 0.5A; 0.15W; SC70,SOT323 Type of transistor: PNP Polarisation: bipolar Collector-emitter voltage: 80V Collector current: 0.5A Power dissipation: 0.15W Case: SC70; SOT323 Current gain: 100 Mounting: SMD Kind of package: reel; tape Frequency: 50MHz Application: automotive industry |
товару немає в наявності |
В кошику од. на суму грн. | |||||||||||||||
| SMMBTA56WT3G | ONSEMI |
Category: PNP SMD transistorsDescription: Transistor: PNP; bipolar; 80V; 0.5A; 0.15W; SC70,SOT323 Type of transistor: PNP Polarisation: bipolar Collector-emitter voltage: 80V Collector current: 0.5A Power dissipation: 0.15W Case: SC70; SOT323 Current gain: 100 Mounting: SMD Kind of package: reel; tape Frequency: 50MHz Application: automotive industry |
товару немає в наявності |
В кошику од. на суму грн. | |||||||||||||||
| NCN8024DTBR2G | ONSEMI |
Category: Interfaces others - integrated circuitsDescription: IC: interface; card inerface; 2.7÷5.5VDC; SMD; TSSOP28; reel,tape Kind of integrated circuit: card inerface Application: for smart card application Type of integrated circuit: interface Case: TSSOP28 Kind of package: reel; tape Mounting: SMD Operating temperature: -40...85°C Supply voltage: 2.7...5.5V DC |
товару немає в наявності |
В кошику од. на суму грн. | |||||||||||||||
| NCN8024DWR2G | ONSEMI |
Category: Interfaces others - integrated circuitsDescription: IC: interface; card inerface; 3.3÷5.5VDC; SMD; SO28; reel,tape Kind of integrated circuit: card inerface Application: for smart card application Type of integrated circuit: interface Case: SO28 Kind of package: reel; tape Mounting: SMD Operating temperature: -40...85°C Supply voltage: 3.3...5.5V DC |
товару немає в наявності |
В кошику од. на суму грн. | |||||||||||||||
| NCN8025MTTBG | ONSEMI |
Category: Interfaces others - integrated circuitsDescription: IC: interface; card inerface; 2.7÷5.5VDC; SMD; QFN16; reel,tape Kind of integrated circuit: card inerface Application: for smart card application Type of integrated circuit: interface Case: QFN16 Kind of package: reel; tape Mounting: SMD Operating temperature: -40...85°C Supply voltage: 2.7...5.5V DC |
товару немає в наявності |
В кошику од. на суму грн. | |||||||||||||||
| NCN8026AMNTXG | ONSEMI |
Category: Interfaces others - integrated circuitsDescription: IC: interface; card inerface; 1.6÷5.5VDC; SMD; QFN24; reel,tape Kind of integrated circuit: card inerface Application: for smart card application Type of integrated circuit: interface Case: QFN24 Kind of package: reel; tape Mounting: SMD Operating temperature: -40...85°C Supply voltage: 1.6...5.5V DC |
товару немає в наявності |
В кошику од. на суму грн. | |||||||||||||||
| ISL9R3060G2-F085 | ONSEMI |
Category: THT universal diodesDescription: Diode: rectifying; THT; 600V; 30A; tube; TO247-2; 45ns Type of diode: rectifying Mounting: THT Max. off-state voltage: 0.6kV Load current: 30A Semiconductor structure: single diode Kind of package: tube Case: TO247-2 Reverse recovery time: 45ns Application: automotive industry |
товару немає в наявності |
В кошику од. на суму грн. | |||||||||||||||
| ISL9V2040D3ST | ONSEMI |
Category: SMD IGBT transistorsDescription: Transistor: IGBT; 400V; 10A; 130W; DPAK; Features: logic level; ESD Type of transistor: IGBT Collector-emitter voltage: 400V Collector current: 10A Power dissipation: 130W Case: DPAK Gate-emitter voltage: ±10V Mounting: SMD Gate charge: 12nC Kind of package: reel; tape Features of semiconductor devices: logic level Application: ignition systems Version: ESD |
товару немає в наявності |
В кошику од. на суму грн. | |||||||||||||||
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MOC3032M | ONSEMI |
Category: OptotriacsDescription: Optotriac; 7.5kV; triac; DIP6; Ch: 1; MOC303XM; 2kV/μs Manufacturer series: MOC303XM Case: DIP6 Type of optocoupler: optotriac Mounting: THT Kind of output: triac Number of channels: 1 Slew rate: 2kV/μs Insulation voltage: 7.5kV |
на замовлення 652 шт: термін постачання 21-30 дні (днів) |
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| BZX79C5V6TR | ONSEMI |
Category: THT Zener diodesDescription: Diode: Zener; 0.5W; 5.6V; reel,tape; CASE017AG; single diode; 1uA Type of diode: Zener Power dissipation: 0.5W Zener voltage: 5.6V Case: CASE017AG Mounting: THT Tolerance: ±5% Semiconductor structure: single diode Leakage current: 1µA Kind of package: reel; tape Manufacturer series: BZX79C |
товару немає в наявності |
В кошику од. на суму грн. | |||||||||||||||
| BZX79C5V6-T50A | ONSEMI |
Category: THT Zener diodesDescription: Diode: Zener; 0.5W; 5.6V; Ammo Pack; CASE017AG; single diode; 1uA Type of diode: Zener Power dissipation: 0.5W Zener voltage: 5.6V Case: CASE017AG Mounting: THT Tolerance: ±5% Semiconductor structure: single diode Leakage current: 1µA Kind of package: Ammo Pack Manufacturer series: BZX79C |
товару немає в наявності |
В кошику од. на суму грн. | |||||||||||||||
| 1N5232B | ONSEMI |
Category: THT Zener diodesDescription: Diode: Zener; 0.5W; 5.6V; bulk; CASE017AG; single diode; 5uA Type of diode: Zener Power dissipation: 0.5W Zener voltage: 5.6V Case: CASE017AG Mounting: THT Tolerance: ±5% Semiconductor structure: single diode Leakage current: 5µA Manufacturer series: 1N52xxB Kind of package: bulk |
товару немає в наявності |
В кошику од. на суму грн. | |||||||||||||||
| 1N5232BTR | ONSEMI |
Category: THT Zener diodesDescription: Diode: Zener; 0.5W; 5.6V; reel,tape; CASE017AG; single diode; 5uA Type of diode: Zener Power dissipation: 0.5W Zener voltage: 5.6V Case: CASE017AG Mounting: THT Tolerance: ±5% Semiconductor structure: single diode Leakage current: 5µA Manufacturer series: 1N52xxB Kind of package: reel; tape |
товару немає в наявності |
В кошику од. на суму грн. | |||||||||||||||
| LM2904EDR2G | ONSEMI |
Category: SMD operational amplifiersDescription: IC: operational amplifier; SO8; 3÷32VDC; reel,tape; 200nA; Ch: dual Type of integrated circuit: operational amplifier Mounting: SMT Number of channels: dual Case: SO8 Operating temperature: -40...105°C Input offset voltage: 10mV Voltage supply range: 3...32V DC Kind of package: reel; tape Input offset current: 200nA |
товару немає в наявності |
В кошику од. на суму грн. | |||||||||||||||
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FSQ0765RSUDTU | ONSEMI |
Category: Voltage regulators - PWM circuitsDescription: IC: PMIC; PWM controller,resonant mode controller; 2.28A; 650V Type of integrated circuit: PMIC Topology: flyback Kind of integrated circuit: PWM controller; resonant mode controller Case: TO220-6 Output current: 2.28A Output voltage: 650V Number of channels: 1 Mounting: THT Operating temperature: -25...85°C Operating voltage: 8...19V DC Frequency: 66.7kHz On-state resistance: 1.6Ω Power: 70W Input voltage: 85...265V |
на замовлення 318 шт: термін постачання 21-30 дні (днів) |
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| MC74HC1G14DBVT1G | ONSEMI |
Category: Gates, invertersDescription: IC: digital Type of integrated circuit: digital |
на замовлення 12000 шт: термін постачання 21-30 дні (днів) |
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| DTA124XET1G | ONSEMI |
Category: PNP SMD transistorsDescription: Transistor: PNP; bipolar; BRT; 50V; 100mA; 300mW; SC75,SOT416 Polarisation: bipolar Kind of package: reel; tape Kind of transistor: BRT Mounting: SMD Type of transistor: PNP Case: SC75; SOT416 Collector current: 0.1A Power dissipation: 0.3W Quantity in set/package: 3000pcs. Collector-emitter voltage: 50V Current gain: 80...130 Base resistor: 22kΩ Base-emitter resistor: 47kΩ |
товару немає в наявності |
В кошику од. на суму грн. | |||||||||||||||
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1N5369BRLG | ONSEMI |
Category: THT Zener diodesDescription: Diode: Zener; 5W; 51V; reel,tape; CASE017AA; single diode; 0.5uA Type of diode: Zener Power dissipation: 5W Zener voltage: 51V Kind of package: reel; tape Case: CASE017AA Mounting: THT Tolerance: ±5% Semiconductor structure: single diode Leakage current: 0.5µA Manufacturer series: 1N53xxB |
на замовлення 2522 шт: термін постачання 21-30 дні (днів) |
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| UJ3C120150K3S | ONSEMI |
Category: THT N channel transistorsDescription: Transistor: N-JFET / N-MOSFET; SiC; unipolar; cascode; 1.2kV; 166W Mounting: THT Type of transistor: N-JFET / N-MOSFET Polarisation: unipolar Technology: SiC Case: TO247-3 Gate-source voltage: -25...25V Gate charge: 63nC On-state resistance: 0.33Ω Drain current: 13.8A Pulsed drain current: 38A Power dissipation: 166W Drain-source voltage: 1.2kV Kind of package: tube Kind of transistor: cascode Kind of channel: enhancement |
товару немає в наявності |
В кошику од. на суму грн. | |||||||||||||||
| NCP2890DMR2G | ONSEMI |
Category: RTV - audio integrated circuitsDescription: IC: audio amplifier; Pout: 1W; 2.5÷5.5VDC; Micro8; 8Ω Type of integrated circuit: audio amplifier Case: Micro8 Integrated circuit features: mono full-bridge: Bridge Tied Load (BTL) Mounting: SMD Kind of package: reel; tape Output power: 1W Supply voltage: 2.5...5.5V DC Impedance: 8Ω |
товару немає в наявності |
В кошику од. на суму грн. | |||||||||||||||
| MC74LVX4066DR2G | ONSEMI |
Category: UnclassifiedDescription: MC74LVX4066DR2G |
на замовлення 5000 шт: термін постачання 21-30 дні (днів) |
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| MC74LVX4066DTR2G | ONSEMI |
Category: Integrated circuits - UnclassifiedDescription: MC74LVX4066DTR2G |
на замовлення 2500 шт: термін постачання 21-30 дні (днів) |
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FL7760AM6X | ONSEMI |
Category: Voltage regulators - PWM circuitsDescription: PMIC; DC/DC converter,LED driver; Uin: 8÷70V; -2.5÷1.5A; SOT23-6 Mounting: SMD Output current: -2.5...1.5A Input voltage: 8...70V Number of channels: 1 Frequency: 1MHz Kind of integrated circuit: DC/DC converter; LED driver Application: for LED applications Topology: buck Type of integrated circuit: PMIC Case: SOT23-6 Integrated circuit features: linear dimming; PWM Kind of package: reel; tape |
товару немає в наявності |
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|
FDP8860 | ONSEMI |
Category: THT N channel transistorsDescription: Transistor: N-MOSFET; unipolar; 30V; 80A; Idm: 556A; 254W; TO220AB Type of transistor: N-MOSFET Polarisation: unipolar Drain-source voltage: 30V Drain current: 80A Pulsed drain current: 556A Power dissipation: 254W Case: TO220AB Gate-source voltage: ±20V On-state resistance: 3.8mΩ Mounting: THT Gate charge: 222nC Kind of package: tube Kind of channel: enhancement |
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| MJ14002G | ONSEMI |
Category: NPN THT transistorsDescription: Transistor: NPN; bipolar; 80V; 60A; 300W; TO204,TO3 Type of transistor: NPN Polarisation: bipolar Collector-emitter voltage: 80V Collector current: 60A Power dissipation: 300W Case: TO3; TO204 Mounting: THT Kind of package: in-tray |
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|
NCP81074ADR2G | ONSEMI |
Category: MOSFET/IGBT driversDescription: IC: driver; low-side,gate driver; SO8; -10÷10A; Ch: 1; 4.5÷20VDC Type of integrated circuit: driver Kind of integrated circuit: gate driver; low-side Case: SO8 Output current: -10...10A Number of channels: 1 Supply voltage: 4.5...20V DC Mounting: SMD Operating temperature: -40...140°C Impulse rise time: 7ns Pulse fall time: 7ns |
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| NCP81074AMNTBG | ONSEMI |
Category: MOSFET/IGBT driversDescription: IC: driver; low-side,gate driver; DFN8; -10÷10A; Ch: 1; 4.5÷20VDC Type of integrated circuit: driver Kind of integrated circuit: gate driver; low-side Case: DFN8 Output current: -10...10A Number of channels: 1 Supply voltage: 4.5...20V DC Mounting: SMD Operating temperature: -40...140°C Impulse rise time: 7ns Pulse fall time: 7ns |
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| NTP7D3N15MC | ONSEMI |
Category: THT N channel transistorsDescription: Transistor: N-MOSFET; unipolar; 150V; 101A; Idm: 574A; 166W; TO220-3 Type of transistor: N-MOSFET Polarisation: unipolar Drain-source voltage: 150V Drain current: 101A Pulsed drain current: 574A Power dissipation: 166W Case: TO220-3 Gate-source voltage: ±20V On-state resistance: 7.3mΩ Mounting: THT Gate charge: 53nC Kind of package: tube Kind of channel: enhancement |
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| NCV47711PDAJR2G | ONSEMI |
Category: LDO adjustable voltage regulatorsDescription: IC: voltage regulator; LDO,linear,adjustable; 5÷20V; 0.35A; SO8 Kind of package: reel; tape Case: SO8 Mounting: SMD Output current: 0.35A Number of channels: 1 Output voltage: 5...20V Type of integrated circuit: voltage regulator Kind of voltage regulator: adjustable; LDO; linear Application: automotive industry |
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| RGP10K | ONSEMI |
Category: THT universal diodesDescription: Diode: rectifying; THT; 800V; 1A; reel,tape; DO41 Type of diode: rectifying Mounting: THT Max. off-state voltage: 0.8kV Load current: 1A Semiconductor structure: single diode Kind of package: reel; tape Case: DO41 |
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| EGP10K | ONSEMI |
Category: THT universal diodesDescription: Diode: rectifying; THT; 800V; 1A; reel,tape; DO41; 75ns Max. off-state voltage: 0.8kV Case: DO41 Type of diode: rectifying Kind of package: reel; tape Semiconductor structure: single diode Mounting: THT Reverse recovery time: 75ns Load current: 1A |
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| NSV60600MZ4T1G | ONSEMI |
Category: PNP SMD transistorsDescription: Transistor: PNP; bipolar; 60V; 6A; 2W; SOT223-4,TO261-4 Type of transistor: PNP Polarisation: bipolar Collector-emitter voltage: 60V Collector current: 6A Power dissipation: 2W Case: SOT223-4; TO261-4 Current gain: 120...360 Mounting: SMD Kind of package: reel; tape Frequency: 100MHz Application: automotive industry |
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| NSV60600MZ4T3G | ONSEMI |
Category: PNP SMD transistorsDescription: Transistor: PNP; bipolar; 60V; 6A; 2W; SOT223-4,TO261-4 Type of transistor: PNP Polarisation: bipolar Collector-emitter voltage: 60V Collector current: 6A Power dissipation: 2W Case: SOT223-4; TO261-4 Current gain: 120...360 Mounting: SMD Kind of package: reel; tape Frequency: 100MHz Application: automotive industry |
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|
SZMMBZ5245BLT1G | ONSEMI |
Category: SMD Zener diodesDescription: Diode: Zener; 0.3W; 15V; SMD; reel,tape; SOT23; single diode; 0.1uA Type of diode: Zener Power dissipation: 0.3W Zener voltage: 15V Mounting: SMD Tolerance: ±5% Kind of package: reel; tape Case: SOT23 Semiconductor structure: single diode Manufacturer series: MMBZ52xxBLT1G Leakage current: 0.1µA Application: automotive industry |
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| MMSZ5241BT1G |
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Виробник: ONSEMI
Category: SMD Zener diodes
Description: Diode: Zener; 0.5W; 11V; SMD; reel,tape; SOD123; single diode
Type of diode: Zener
Power dissipation: 0.5W
Zener voltage: 11V
Mounting: SMD
Tolerance: ±5%
Kind of package: reel; tape
Case: SOD123
Semiconductor structure: single diode
Manufacturer series: MMSZ52xxB
Category: SMD Zener diodes
Description: Diode: Zener; 0.5W; 11V; SMD; reel,tape; SOD123; single diode
Type of diode: Zener
Power dissipation: 0.5W
Zener voltage: 11V
Mounting: SMD
Tolerance: ±5%
Kind of package: reel; tape
Case: SOD123
Semiconductor structure: single diode
Manufacturer series: MMSZ52xxB
на замовлення 845 шт:
термін постачання 21-30 дні (днів)| Кількість | Ціна |
|---|---|
| 59+ | 7.32 грн |
| 90+ | 4.45 грн |
| 99+ | 4.06 грн |
| 123+ | 3.25 грн |
| 138+ | 2.90 грн |
| 500+ | 2.10 грн |
| 626+ | 1.49 грн |
| MURHD560T4G |
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Виробник: ONSEMI
Category: SMD universal diodes
Description: Diode: rectifying; SMD; 600V; 5A; 30ns; DPAK; reel,tape
Type of diode: rectifying
Mounting: SMD
Max. off-state voltage: 0.6kV
Load current: 5A
Semiconductor structure: single diode
Case: DPAK
Kind of package: reel; tape
Reverse recovery time: 30ns
Category: SMD universal diodes
Description: Diode: rectifying; SMD; 600V; 5A; 30ns; DPAK; reel,tape
Type of diode: rectifying
Mounting: SMD
Max. off-state voltage: 0.6kV
Load current: 5A
Semiconductor structure: single diode
Case: DPAK
Kind of package: reel; tape
Reverse recovery time: 30ns
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| MURHD560W1T4G |
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Виробник: ONSEMI
Category: SMD universal diodes
Description: Diode: rectifying; SMD; 600V; 5A; 30ns; DPAK; reel,tape
Type of diode: rectifying
Mounting: SMD
Max. off-state voltage: 0.6kV
Load current: 5A
Semiconductor structure: single diode
Case: DPAK
Kind of package: reel; tape
Reverse recovery time: 30ns
Category: SMD universal diodes
Description: Diode: rectifying; SMD; 600V; 5A; 30ns; DPAK; reel,tape
Type of diode: rectifying
Mounting: SMD
Max. off-state voltage: 0.6kV
Load current: 5A
Semiconductor structure: single diode
Case: DPAK
Kind of package: reel; tape
Reverse recovery time: 30ns
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| SSURHD8560W1T4G |
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Виробник: ONSEMI
Category: SMD universal diodes
Description: Diode: rectifying; SMD; 600V; 5A; DPAK; reel,tape
Type of diode: rectifying
Mounting: SMD
Max. off-state voltage: 0.6kV
Load current: 5A
Semiconductor structure: single diode
Case: DPAK
Kind of package: reel; tape
Application: automotive industry
Category: SMD universal diodes
Description: Diode: rectifying; SMD; 600V; 5A; DPAK; reel,tape
Type of diode: rectifying
Mounting: SMD
Max. off-state voltage: 0.6kV
Load current: 5A
Semiconductor structure: single diode
Case: DPAK
Kind of package: reel; tape
Application: automotive industry
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| DTA143EET1G |
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Виробник: ONSEMI
Category: PNP SMD transistors
Description: Transistor: PNP; bipolar; BRT; 50V; 100mA; 300mW; SC75,SOT416
Type of transistor: PNP
Polarisation: bipolar
Kind of transistor: BRT
Collector-emitter voltage: 50V
Collector current: 0.1A
Power dissipation: 0.3W
Case: SC75; SOT416
Current gain: 15...27
Mounting: SMD
Kind of package: reel; tape
Base resistor: 4.7kΩ
Base-emitter resistor: 4.7kΩ
Quantity in set/package: 3000pcs.
Category: PNP SMD transistors
Description: Transistor: PNP; bipolar; BRT; 50V; 100mA; 300mW; SC75,SOT416
Type of transistor: PNP
Polarisation: bipolar
Kind of transistor: BRT
Collector-emitter voltage: 50V
Collector current: 0.1A
Power dissipation: 0.3W
Case: SC75; SOT416
Current gain: 15...27
Mounting: SMD
Kind of package: reel; tape
Base resistor: 4.7kΩ
Base-emitter resistor: 4.7kΩ
Quantity in set/package: 3000pcs.
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| DTA143EM3T5G |
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Виробник: ONSEMI
Category: PNP SMD transistors
Description: Transistor: PNP; bipolar; BRT; 50V; 100mA; 600mW; SOT723; R1: 4.7kΩ
Type of transistor: PNP
Polarisation: bipolar
Kind of transistor: BRT
Collector-emitter voltage: 50V
Collector current: 0.1A
Power dissipation: 0.6W
Case: SOT723
Current gain: 15...27
Mounting: SMD
Kind of package: reel; tape
Base resistor: 4.7kΩ
Base-emitter resistor: 4.7kΩ
Quantity in set/package: 8000pcs.
Category: PNP SMD transistors
Description: Transistor: PNP; bipolar; BRT; 50V; 100mA; 600mW; SOT723; R1: 4.7kΩ
Type of transistor: PNP
Polarisation: bipolar
Kind of transistor: BRT
Collector-emitter voltage: 50V
Collector current: 0.1A
Power dissipation: 0.6W
Case: SOT723
Current gain: 15...27
Mounting: SMD
Kind of package: reel; tape
Base resistor: 4.7kΩ
Base-emitter resistor: 4.7kΩ
Quantity in set/package: 8000pcs.
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| DTA143TET1G |
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Виробник: ONSEMI
Category: PNP SMD transistors
Description: Transistor: PNP; bipolar; BRT; 50V; 100mA; 300mW; SC75,SOT416; 4.7kΩ
Type of transistor: PNP
Polarisation: bipolar
Kind of transistor: BRT
Collector-emitter voltage: 50V
Collector current: 0.1A
Power dissipation: 0.3W
Case: SC75; SOT416
Current gain: 160...250
Mounting: SMD
Kind of package: reel; tape
Base resistor: 4.7kΩ
Quantity in set/package: 3000pcs.
Category: PNP SMD transistors
Description: Transistor: PNP; bipolar; BRT; 50V; 100mA; 300mW; SC75,SOT416; 4.7kΩ
Type of transistor: PNP
Polarisation: bipolar
Kind of transistor: BRT
Collector-emitter voltage: 50V
Collector current: 0.1A
Power dissipation: 0.3W
Case: SC75; SOT416
Current gain: 160...250
Mounting: SMD
Kind of package: reel; tape
Base resistor: 4.7kΩ
Quantity in set/package: 3000pcs.
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| DTA143ZM3T5G |
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Виробник: ONSEMI
Category: PNP SMD transistors
Description: Transistor: PNP; bipolar; BRT; 50V; 100mA; 600mW; SOT723; R1: 4.7kΩ
Type of transistor: PNP
Polarisation: bipolar
Kind of transistor: BRT
Collector-emitter voltage: 50V
Collector current: 0.1A
Power dissipation: 0.6W
Case: SOT723
Current gain: 80...140
Mounting: SMD
Kind of package: reel; tape
Base resistor: 4.7kΩ
Base-emitter resistor: 47kΩ
Quantity in set/package: 8000pcs.
Category: PNP SMD transistors
Description: Transistor: PNP; bipolar; BRT; 50V; 100mA; 600mW; SOT723; R1: 4.7kΩ
Type of transistor: PNP
Polarisation: bipolar
Kind of transistor: BRT
Collector-emitter voltage: 50V
Collector current: 0.1A
Power dissipation: 0.6W
Case: SOT723
Current gain: 80...140
Mounting: SMD
Kind of package: reel; tape
Base resistor: 4.7kΩ
Base-emitter resistor: 47kΩ
Quantity in set/package: 8000pcs.
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| FODM3022-NF098 |
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Виробник: ONSEMI
Category: Optotriacs
Description: Optotriac; 3.75kV; Uout: 400V; triac; MFP4; Ch: 1; FODM302x; tube
Type of optocoupler: optotriac
Mounting: SMD
Number of channels: 1
Kind of output: triac
Insulation voltage: 3.75kV
Case: MFP4
Manufacturer series: FODM302x
Max. off-state voltage: 3V
Output voltage: 400V
Kind of package: tube
Category: Optotriacs
Description: Optotriac; 3.75kV; Uout: 400V; triac; MFP4; Ch: 1; FODM302x; tube
Type of optocoupler: optotriac
Mounting: SMD
Number of channels: 1
Kind of output: triac
Insulation voltage: 3.75kV
Case: MFP4
Manufacturer series: FODM302x
Max. off-state voltage: 3V
Output voltage: 400V
Kind of package: tube
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| FODM3023-NF098 |
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Виробник: ONSEMI
Category: Optotriacs
Description: Optotriac; 3.75kV; Uout: 400V; triac; MFP4; Ch: 1; FODM302x; tube
Manufacturer series: FODM302x
Kind of output: triac
Number of channels: 1
Max. off-state voltage: 3V
Output voltage: 400V
Insulation voltage: 3.75kV
Case: MFP4
Type of optocoupler: optotriac
Mounting: SMD
Kind of package: tube
Category: Optotriacs
Description: Optotriac; 3.75kV; Uout: 400V; triac; MFP4; Ch: 1; FODM302x; tube
Manufacturer series: FODM302x
Kind of output: triac
Number of channels: 1
Max. off-state voltage: 3V
Output voltage: 400V
Insulation voltage: 3.75kV
Case: MFP4
Type of optocoupler: optotriac
Mounting: SMD
Kind of package: tube
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| FODM3022R2-NF098 |
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Виробник: ONSEMI
Category: Optotriacs
Description: Optotriac; 3.75kV; Uout: 400V; triac; MFP4; Ch: 1; FODM302x
Manufacturer series: FODM302x
Kind of output: triac
Number of channels: 1
Max. off-state voltage: 3V
Output voltage: 400V
Insulation voltage: 3.75kV
Case: MFP4
Type of optocoupler: optotriac
Mounting: SMD
Kind of package: reel; tape
Category: Optotriacs
Description: Optotriac; 3.75kV; Uout: 400V; triac; MFP4; Ch: 1; FODM302x
Manufacturer series: FODM302x
Kind of output: triac
Number of channels: 1
Max. off-state voltage: 3V
Output voltage: 400V
Insulation voltage: 3.75kV
Case: MFP4
Type of optocoupler: optotriac
Mounting: SMD
Kind of package: reel; tape
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| FODM3022R2V-NF098 |
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Виробник: ONSEMI
Category: Optotriacs
Description: Optotriac; 3.75kV; Uout: 400V; triac; MFP4; Ch: 1; FODM302x
Manufacturer series: FODM302x
Kind of output: triac
Conform to the norm: VDE
Number of channels: 1
Max. off-state voltage: 3V
Output voltage: 400V
Insulation voltage: 3.75kV
Case: MFP4
Type of optocoupler: optotriac
Mounting: SMD
Kind of package: reel; tape
Category: Optotriacs
Description: Optotriac; 3.75kV; Uout: 400V; triac; MFP4; Ch: 1; FODM302x
Manufacturer series: FODM302x
Kind of output: triac
Conform to the norm: VDE
Number of channels: 1
Max. off-state voltage: 3V
Output voltage: 400V
Insulation voltage: 3.75kV
Case: MFP4
Type of optocoupler: optotriac
Mounting: SMD
Kind of package: reel; tape
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| FODM3023R2-NF098 |
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Виробник: ONSEMI
Category: Optotriacs
Description: Optotriac; 3.75kV; Uout: 400V; MFP4; Ch: 1; FODM302x; 10V/μs
Manufacturer series: FODM302x
Kind of output: triac; without zero voltage crossing driver
Trigger current: 5mA
Number of channels: 1
Max. off-state voltage: 3V
Slew rate: 10V/μs
Output voltage: 400V
Insulation voltage: 3.75kV
Case: MFP4
Type of optocoupler: optotriac
Mounting: SMD
Category: Optotriacs
Description: Optotriac; 3.75kV; Uout: 400V; MFP4; Ch: 1; FODM302x; 10V/μs
Manufacturer series: FODM302x
Kind of output: triac; without zero voltage crossing driver
Trigger current: 5mA
Number of channels: 1
Max. off-state voltage: 3V
Slew rate: 10V/μs
Output voltage: 400V
Insulation voltage: 3.75kV
Case: MFP4
Type of optocoupler: optotriac
Mounting: SMD
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| RURG5060-F085 |
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Виробник: ONSEMI
Category: THT universal diodes
Description: Diode: rectifying; THT; 600V; 50A; tube; TO247-2
Type of diode: rectifying
Semiconductor structure: single diode
Mounting: THT
Case: TO247-2
Kind of package: tube
Load current: 50A
Application: automotive industry
Max. off-state voltage: 0.6kV
Category: THT universal diodes
Description: Diode: rectifying; THT; 600V; 50A; tube; TO247-2
Type of diode: rectifying
Semiconductor structure: single diode
Mounting: THT
Case: TO247-2
Kind of package: tube
Load current: 50A
Application: automotive industry
Max. off-state voltage: 0.6kV
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| FJL4315OTU |
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Виробник: ONSEMI
Category: NPN THT transistors
Description: Transistor: NPN; bipolar; 250V; 17A; 150W; TO264
Type of transistor: NPN
Polarisation: bipolar
Collector-emitter voltage: 250V
Collector current: 17A
Power dissipation: 150W
Case: TO264
Current gain: 55...160
Mounting: THT
Kind of package: tube
Frequency: 30MHz
Category: NPN THT transistors
Description: Transistor: NPN; bipolar; 250V; 17A; 150W; TO264
Type of transistor: NPN
Polarisation: bipolar
Collector-emitter voltage: 250V
Collector current: 17A
Power dissipation: 150W
Case: TO264
Current gain: 55...160
Mounting: THT
Kind of package: tube
Frequency: 30MHz
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| MJW3281AG |
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Виробник: ONSEMI
Category: NPN THT transistors
Description: Transistor: NPN; bipolar; 230V; 15A; 200W; TO247-3
Type of transistor: NPN
Polarisation: bipolar
Collector-emitter voltage: 230V
Collector current: 15A
Power dissipation: 200W
Case: TO247-3
Mounting: THT
Kind of package: tube
Category: NPN THT transistors
Description: Transistor: NPN; bipolar; 230V; 15A; 200W; TO247-3
Type of transistor: NPN
Polarisation: bipolar
Collector-emitter voltage: 230V
Collector current: 15A
Power dissipation: 200W
Case: TO247-3
Mounting: THT
Kind of package: tube
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| DTC115TET1G |
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Виробник: ONSEMI
Category: NPN SMD transistors
Description: Transistor: NPN; bipolar; BRT; 50V; 100mA; 300mW; SC75,SOT416; 100kΩ
Type of transistor: NPN
Polarisation: bipolar
Kind of transistor: BRT
Collector-emitter voltage: 50V
Collector current: 0.1A
Power dissipation: 0.3W
Case: SC75; SOT416
Current gain: 160...350
Mounting: SMD
Quantity in set/package: 3000pcs.
Kind of package: reel; tape
Base resistor: 100kΩ
Category: NPN SMD transistors
Description: Transistor: NPN; bipolar; BRT; 50V; 100mA; 300mW; SC75,SOT416; 100kΩ
Type of transistor: NPN
Polarisation: bipolar
Kind of transistor: BRT
Collector-emitter voltage: 50V
Collector current: 0.1A
Power dissipation: 0.3W
Case: SC75; SOT416
Current gain: 160...350
Mounting: SMD
Quantity in set/package: 3000pcs.
Kind of package: reel; tape
Base resistor: 100kΩ
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| MURS480ET3G |
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Виробник: ONSEMI
Category: SMD universal diodes
Description: Diode: rectifying; SMD; 800V; 4A; 100ns; SMC; Ufmax: 1.53V; Ifsm: 70A
Mounting: SMD
Type of diode: rectifying
Kind of package: reel; tape
Semiconductor structure: single diode
Features of semiconductor devices: ultrafast switching
Reverse recovery time: 100ns
Max. forward voltage: 1.53V
Load current: 4A
Max. forward impulse current: 70A
Max. off-state voltage: 0.8kV
Case: SMC
Category: SMD universal diodes
Description: Diode: rectifying; SMD; 800V; 4A; 100ns; SMC; Ufmax: 1.53V; Ifsm: 70A
Mounting: SMD
Type of diode: rectifying
Kind of package: reel; tape
Semiconductor structure: single diode
Features of semiconductor devices: ultrafast switching
Reverse recovery time: 100ns
Max. forward voltage: 1.53V
Load current: 4A
Max. forward impulse current: 70A
Max. off-state voltage: 0.8kV
Case: SMC
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| MMSZ4680ET1G |
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Виробник: ONSEMI
Category: SMD Zener diodes
Description: Diode: Zener; 0.5W; 2.2V; SMD; reel,tape; SOD123; single diode
Power dissipation: 0.5W
Case: SOD123
Mounting: SMD
Semiconductor structure: single diode
Zener voltage: 2.2V
Tolerance: ±5%
Type of diode: Zener
Kind of package: reel; tape
Category: SMD Zener diodes
Description: Diode: Zener; 0.5W; 2.2V; SMD; reel,tape; SOD123; single diode
Power dissipation: 0.5W
Case: SOD123
Mounting: SMD
Semiconductor structure: single diode
Zener voltage: 2.2V
Tolerance: ±5%
Type of diode: Zener
Kind of package: reel; tape
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| 4N29M |
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Виробник: ONSEMI
Category: Optocouplers - analog output
Description: Optocoupler; THT; Ch: 1; OUT: Darlington; Uinsul: 4.17kV; DIP6
Type of optocoupler: optocoupler
Mounting: THT
Number of channels: 1
Kind of output: Darlington
Insulation voltage: 4.17kV
CTR@If: 100%@10mA
Case: DIP6
Turn-on time: 5µs
Turn-off time: 40µs
Max. off-state voltage: 3V
Category: Optocouplers - analog output
Description: Optocoupler; THT; Ch: 1; OUT: Darlington; Uinsul: 4.17kV; DIP6
Type of optocoupler: optocoupler
Mounting: THT
Number of channels: 1
Kind of output: Darlington
Insulation voltage: 4.17kV
CTR@If: 100%@10mA
Case: DIP6
Turn-on time: 5µs
Turn-off time: 40µs
Max. off-state voltage: 3V
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| 4N29SR2M |
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Виробник: ONSEMI
Category: Optocouplers - analog output
Description: Optocoupler; SMD; Ch: 1; OUT: Darlington; Uinsul: 4.17kV; Uce: 30V
Type of optocoupler: optocoupler
Mounting: SMD
Number of channels: 1
Kind of output: Darlington
Insulation voltage: 4.17kV
CTR@If: 100%@10mA
Collector-emitter voltage: 30V
Case: PDIP6
Turn-on time: 5µs
Turn-off time: 40µs
Max. off-state voltage: 3V
Manufacturer series: 4N2X
Category: Optocouplers - analog output
Description: Optocoupler; SMD; Ch: 1; OUT: Darlington; Uinsul: 4.17kV; Uce: 30V
Type of optocoupler: optocoupler
Mounting: SMD
Number of channels: 1
Kind of output: Darlington
Insulation voltage: 4.17kV
CTR@If: 100%@10mA
Collector-emitter voltage: 30V
Case: PDIP6
Turn-on time: 5µs
Turn-off time: 40µs
Max. off-state voltage: 3V
Manufacturer series: 4N2X
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| NTTBC070NP10M5L |
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Виробник: ONSEMI
Category: Multi channel transistors
Description: Transistor: N/P-MOSFET; unipolar; complementary pair; 100/-100V
Type of transistor: N/P-MOSFET
Polarisation: unipolar
Kind of transistor: complementary pair
Drain-source voltage: 100/-100V
Drain current: 9.5/-5A
Pulsed drain current: 33A
Power dissipation: 14/10W
Gate-source voltage: ±20V
On-state resistance: 70/186mΩ
Mounting: SMD
Gate charge: 5.6/7.3nC
Kind of package: reel; tape
Kind of channel: enhancement
Category: Multi channel transistors
Description: Transistor: N/P-MOSFET; unipolar; complementary pair; 100/-100V
Type of transistor: N/P-MOSFET
Polarisation: unipolar
Kind of transistor: complementary pair
Drain-source voltage: 100/-100V
Drain current: 9.5/-5A
Pulsed drain current: 33A
Power dissipation: 14/10W
Gate-source voltage: ±20V
On-state resistance: 70/186mΩ
Mounting: SMD
Gate charge: 5.6/7.3nC
Kind of package: reel; tape
Kind of channel: enhancement
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| FSL146MRBN |
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Виробник: ONSEMI
Category: Voltage regulators - PWM circuits
Description: IC: PMIC; PWM controller; 1.5A; 650V; 67kHz; Ch: 1; DIP8; flyback
Output voltage: 650V
Power: 26W
Operating temperature: -40...125°C
Number of channels: 1
Output current: 1.5A
On-state resistance: 2.6Ω
Operating voltage: 7.5...24.5V DC
Duty cycle factor: 61...73%
Input voltage: 85...265V
Frequency: 67kHz
Case: DIP8
Topology: flyback
Mounting: THT
Type of integrated circuit: PMIC
Kind of integrated circuit: PWM controller
Category: Voltage regulators - PWM circuits
Description: IC: PMIC; PWM controller; 1.5A; 650V; 67kHz; Ch: 1; DIP8; flyback
Output voltage: 650V
Power: 26W
Operating temperature: -40...125°C
Number of channels: 1
Output current: 1.5A
On-state resistance: 2.6Ω
Operating voltage: 7.5...24.5V DC
Duty cycle factor: 61...73%
Input voltage: 85...265V
Frequency: 67kHz
Case: DIP8
Topology: flyback
Mounting: THT
Type of integrated circuit: PMIC
Kind of integrated circuit: PWM controller
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| MMBTA56WT1G |
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Виробник: ONSEMI
Category: PNP SMD transistors
Description: Transistor: PNP; bipolar; 80V; 0.5A; 0.15W; SC70,SOT323
Type of transistor: PNP
Polarisation: bipolar
Collector-emitter voltage: 80V
Collector current: 0.5A
Power dissipation: 0.15W
Case: SC70; SOT323
Current gain: 100
Mounting: SMD
Kind of package: reel; tape
Frequency: 50MHz
Category: PNP SMD transistors
Description: Transistor: PNP; bipolar; 80V; 0.5A; 0.15W; SC70,SOT323
Type of transistor: PNP
Polarisation: bipolar
Collector-emitter voltage: 80V
Collector current: 0.5A
Power dissipation: 0.15W
Case: SC70; SOT323
Current gain: 100
Mounting: SMD
Kind of package: reel; tape
Frequency: 50MHz
на замовлення 551 шт:
термін постачання 21-30 дні (днів)| Кількість | Ціна |
|---|---|
| 56+ | 7.71 грн |
| 61+ | 6.60 грн |
| 102+ | 3.93 грн |
| 483+ | 1.93 грн |
| SMMBTA56LT1G |
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Виробник: ONSEMI
Category: PNP SMD transistors
Description: Transistor: PNP; bipolar; 80V; 0.5A; 0.225W; SOT23,TO236AB
Type of transistor: PNP
Polarisation: bipolar
Collector-emitter voltage: 80V
Collector current: 0.5A
Power dissipation: 0.225W
Case: SOT23; TO236AB
Current gain: 100
Mounting: SMD
Kind of package: reel; tape
Frequency: 50MHz
Application: automotive industry
Category: PNP SMD transistors
Description: Transistor: PNP; bipolar; 80V; 0.5A; 0.225W; SOT23,TO236AB
Type of transistor: PNP
Polarisation: bipolar
Collector-emitter voltage: 80V
Collector current: 0.5A
Power dissipation: 0.225W
Case: SOT23; TO236AB
Current gain: 100
Mounting: SMD
Kind of package: reel; tape
Frequency: 50MHz
Application: automotive industry
на замовлення 468 шт:
термін постачання 21-30 дні (днів)| Кількість | Ціна |
|---|---|
| 20+ | 22.27 грн |
| 26+ | 15.75 грн |
| 33+ | 12.28 грн |
| 50+ | 9.88 грн |
| 100+ | 7.89 грн |
| 209+ | 4.48 грн |
| SMMBTA56LT3G |
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Виробник: ONSEMI
Category: PNP SMD transistors
Description: Transistor: PNP; bipolar; 80V; 0.5A; 0.225W; SOT23,TO236AB
Type of transistor: PNP
Polarisation: bipolar
Collector-emitter voltage: 80V
Collector current: 0.5A
Power dissipation: 0.225W
Case: SOT23; TO236AB
Current gain: 100
Mounting: SMD
Kind of package: reel; tape
Frequency: 50MHz
Application: automotive industry
Category: PNP SMD transistors
Description: Transistor: PNP; bipolar; 80V; 0.5A; 0.225W; SOT23,TO236AB
Type of transistor: PNP
Polarisation: bipolar
Collector-emitter voltage: 80V
Collector current: 0.5A
Power dissipation: 0.225W
Case: SOT23; TO236AB
Current gain: 100
Mounting: SMD
Kind of package: reel; tape
Frequency: 50MHz
Application: automotive industry
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| SMMBTA56WT1G |
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Виробник: ONSEMI
Category: PNP SMD transistors
Description: Transistor: PNP; bipolar; 80V; 0.5A; 0.15W; SC70,SOT323
Type of transistor: PNP
Polarisation: bipolar
Collector-emitter voltage: 80V
Collector current: 0.5A
Power dissipation: 0.15W
Case: SC70; SOT323
Current gain: 100
Mounting: SMD
Kind of package: reel; tape
Frequency: 50MHz
Application: automotive industry
Category: PNP SMD transistors
Description: Transistor: PNP; bipolar; 80V; 0.5A; 0.15W; SC70,SOT323
Type of transistor: PNP
Polarisation: bipolar
Collector-emitter voltage: 80V
Collector current: 0.5A
Power dissipation: 0.15W
Case: SC70; SOT323
Current gain: 100
Mounting: SMD
Kind of package: reel; tape
Frequency: 50MHz
Application: automotive industry
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| SMMBTA56WT3G |
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Виробник: ONSEMI
Category: PNP SMD transistors
Description: Transistor: PNP; bipolar; 80V; 0.5A; 0.15W; SC70,SOT323
Type of transistor: PNP
Polarisation: bipolar
Collector-emitter voltage: 80V
Collector current: 0.5A
Power dissipation: 0.15W
Case: SC70; SOT323
Current gain: 100
Mounting: SMD
Kind of package: reel; tape
Frequency: 50MHz
Application: automotive industry
Category: PNP SMD transistors
Description: Transistor: PNP; bipolar; 80V; 0.5A; 0.15W; SC70,SOT323
Type of transistor: PNP
Polarisation: bipolar
Collector-emitter voltage: 80V
Collector current: 0.5A
Power dissipation: 0.15W
Case: SC70; SOT323
Current gain: 100
Mounting: SMD
Kind of package: reel; tape
Frequency: 50MHz
Application: automotive industry
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| NCN8024DTBR2G |
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Виробник: ONSEMI
Category: Interfaces others - integrated circuits
Description: IC: interface; card inerface; 2.7÷5.5VDC; SMD; TSSOP28; reel,tape
Kind of integrated circuit: card inerface
Application: for smart card application
Type of integrated circuit: interface
Case: TSSOP28
Kind of package: reel; tape
Mounting: SMD
Operating temperature: -40...85°C
Supply voltage: 2.7...5.5V DC
Category: Interfaces others - integrated circuits
Description: IC: interface; card inerface; 2.7÷5.5VDC; SMD; TSSOP28; reel,tape
Kind of integrated circuit: card inerface
Application: for smart card application
Type of integrated circuit: interface
Case: TSSOP28
Kind of package: reel; tape
Mounting: SMD
Operating temperature: -40...85°C
Supply voltage: 2.7...5.5V DC
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| NCN8024DWR2G |
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Виробник: ONSEMI
Category: Interfaces others - integrated circuits
Description: IC: interface; card inerface; 3.3÷5.5VDC; SMD; SO28; reel,tape
Kind of integrated circuit: card inerface
Application: for smart card application
Type of integrated circuit: interface
Case: SO28
Kind of package: reel; tape
Mounting: SMD
Operating temperature: -40...85°C
Supply voltage: 3.3...5.5V DC
Category: Interfaces others - integrated circuits
Description: IC: interface; card inerface; 3.3÷5.5VDC; SMD; SO28; reel,tape
Kind of integrated circuit: card inerface
Application: for smart card application
Type of integrated circuit: interface
Case: SO28
Kind of package: reel; tape
Mounting: SMD
Operating temperature: -40...85°C
Supply voltage: 3.3...5.5V DC
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| NCN8025MTTBG |
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Виробник: ONSEMI
Category: Interfaces others - integrated circuits
Description: IC: interface; card inerface; 2.7÷5.5VDC; SMD; QFN16; reel,tape
Kind of integrated circuit: card inerface
Application: for smart card application
Type of integrated circuit: interface
Case: QFN16
Kind of package: reel; tape
Mounting: SMD
Operating temperature: -40...85°C
Supply voltage: 2.7...5.5V DC
Category: Interfaces others - integrated circuits
Description: IC: interface; card inerface; 2.7÷5.5VDC; SMD; QFN16; reel,tape
Kind of integrated circuit: card inerface
Application: for smart card application
Type of integrated circuit: interface
Case: QFN16
Kind of package: reel; tape
Mounting: SMD
Operating temperature: -40...85°C
Supply voltage: 2.7...5.5V DC
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| NCN8026AMNTXG |
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Виробник: ONSEMI
Category: Interfaces others - integrated circuits
Description: IC: interface; card inerface; 1.6÷5.5VDC; SMD; QFN24; reel,tape
Kind of integrated circuit: card inerface
Application: for smart card application
Type of integrated circuit: interface
Case: QFN24
Kind of package: reel; tape
Mounting: SMD
Operating temperature: -40...85°C
Supply voltage: 1.6...5.5V DC
Category: Interfaces others - integrated circuits
Description: IC: interface; card inerface; 1.6÷5.5VDC; SMD; QFN24; reel,tape
Kind of integrated circuit: card inerface
Application: for smart card application
Type of integrated circuit: interface
Case: QFN24
Kind of package: reel; tape
Mounting: SMD
Operating temperature: -40...85°C
Supply voltage: 1.6...5.5V DC
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| ISL9R3060G2-F085 |
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Виробник: ONSEMI
Category: THT universal diodes
Description: Diode: rectifying; THT; 600V; 30A; tube; TO247-2; 45ns
Type of diode: rectifying
Mounting: THT
Max. off-state voltage: 0.6kV
Load current: 30A
Semiconductor structure: single diode
Kind of package: tube
Case: TO247-2
Reverse recovery time: 45ns
Application: automotive industry
Category: THT universal diodes
Description: Diode: rectifying; THT; 600V; 30A; tube; TO247-2; 45ns
Type of diode: rectifying
Mounting: THT
Max. off-state voltage: 0.6kV
Load current: 30A
Semiconductor structure: single diode
Kind of package: tube
Case: TO247-2
Reverse recovery time: 45ns
Application: automotive industry
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| ISL9V2040D3ST |
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Виробник: ONSEMI
Category: SMD IGBT transistors
Description: Transistor: IGBT; 400V; 10A; 130W; DPAK; Features: logic level; ESD
Type of transistor: IGBT
Collector-emitter voltage: 400V
Collector current: 10A
Power dissipation: 130W
Case: DPAK
Gate-emitter voltage: ±10V
Mounting: SMD
Gate charge: 12nC
Kind of package: reel; tape
Features of semiconductor devices: logic level
Application: ignition systems
Version: ESD
Category: SMD IGBT transistors
Description: Transistor: IGBT; 400V; 10A; 130W; DPAK; Features: logic level; ESD
Type of transistor: IGBT
Collector-emitter voltage: 400V
Collector current: 10A
Power dissipation: 130W
Case: DPAK
Gate-emitter voltage: ±10V
Mounting: SMD
Gate charge: 12nC
Kind of package: reel; tape
Features of semiconductor devices: logic level
Application: ignition systems
Version: ESD
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| MOC3032M |
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Виробник: ONSEMI
Category: Optotriacs
Description: Optotriac; 7.5kV; triac; DIP6; Ch: 1; MOC303XM; 2kV/μs
Manufacturer series: MOC303XM
Case: DIP6
Type of optocoupler: optotriac
Mounting: THT
Kind of output: triac
Number of channels: 1
Slew rate: 2kV/μs
Insulation voltage: 7.5kV
Category: Optotriacs
Description: Optotriac; 7.5kV; triac; DIP6; Ch: 1; MOC303XM; 2kV/μs
Manufacturer series: MOC303XM
Case: DIP6
Type of optocoupler: optotriac
Mounting: THT
Kind of output: triac
Number of channels: 1
Slew rate: 2kV/μs
Insulation voltage: 7.5kV
на замовлення 652 шт:
термін постачання 21-30 дні (днів)| Кількість | Ціна |
|---|---|
| 8+ | 59.97 грн |
| 11+ | 36.99 грн |
| 29+ | 32.85 грн |
| 50+ | 30.07 грн |
| 100+ | 29.91 грн |
| BZX79C5V6TR |
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Виробник: ONSEMI
Category: THT Zener diodes
Description: Diode: Zener; 0.5W; 5.6V; reel,tape; CASE017AG; single diode; 1uA
Type of diode: Zener
Power dissipation: 0.5W
Zener voltage: 5.6V
Case: CASE017AG
Mounting: THT
Tolerance: ±5%
Semiconductor structure: single diode
Leakage current: 1µA
Kind of package: reel; tape
Manufacturer series: BZX79C
Category: THT Zener diodes
Description: Diode: Zener; 0.5W; 5.6V; reel,tape; CASE017AG; single diode; 1uA
Type of diode: Zener
Power dissipation: 0.5W
Zener voltage: 5.6V
Case: CASE017AG
Mounting: THT
Tolerance: ±5%
Semiconductor structure: single diode
Leakage current: 1µA
Kind of package: reel; tape
Manufacturer series: BZX79C
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| BZX79C5V6-T50A |
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Виробник: ONSEMI
Category: THT Zener diodes
Description: Diode: Zener; 0.5W; 5.6V; Ammo Pack; CASE017AG; single diode; 1uA
Type of diode: Zener
Power dissipation: 0.5W
Zener voltage: 5.6V
Case: CASE017AG
Mounting: THT
Tolerance: ±5%
Semiconductor structure: single diode
Leakage current: 1µA
Kind of package: Ammo Pack
Manufacturer series: BZX79C
Category: THT Zener diodes
Description: Diode: Zener; 0.5W; 5.6V; Ammo Pack; CASE017AG; single diode; 1uA
Type of diode: Zener
Power dissipation: 0.5W
Zener voltage: 5.6V
Case: CASE017AG
Mounting: THT
Tolerance: ±5%
Semiconductor structure: single diode
Leakage current: 1µA
Kind of package: Ammo Pack
Manufacturer series: BZX79C
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| 1N5232B |
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Виробник: ONSEMI
Category: THT Zener diodes
Description: Diode: Zener; 0.5W; 5.6V; bulk; CASE017AG; single diode; 5uA
Type of diode: Zener
Power dissipation: 0.5W
Zener voltage: 5.6V
Case: CASE017AG
Mounting: THT
Tolerance: ±5%
Semiconductor structure: single diode
Leakage current: 5µA
Manufacturer series: 1N52xxB
Kind of package: bulk
Category: THT Zener diodes
Description: Diode: Zener; 0.5W; 5.6V; bulk; CASE017AG; single diode; 5uA
Type of diode: Zener
Power dissipation: 0.5W
Zener voltage: 5.6V
Case: CASE017AG
Mounting: THT
Tolerance: ±5%
Semiconductor structure: single diode
Leakage current: 5µA
Manufacturer series: 1N52xxB
Kind of package: bulk
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| 1N5232BTR |
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Виробник: ONSEMI
Category: THT Zener diodes
Description: Diode: Zener; 0.5W; 5.6V; reel,tape; CASE017AG; single diode; 5uA
Type of diode: Zener
Power dissipation: 0.5W
Zener voltage: 5.6V
Case: CASE017AG
Mounting: THT
Tolerance: ±5%
Semiconductor structure: single diode
Leakage current: 5µA
Manufacturer series: 1N52xxB
Kind of package: reel; tape
Category: THT Zener diodes
Description: Diode: Zener; 0.5W; 5.6V; reel,tape; CASE017AG; single diode; 5uA
Type of diode: Zener
Power dissipation: 0.5W
Zener voltage: 5.6V
Case: CASE017AG
Mounting: THT
Tolerance: ±5%
Semiconductor structure: single diode
Leakage current: 5µA
Manufacturer series: 1N52xxB
Kind of package: reel; tape
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| LM2904EDR2G |
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Виробник: ONSEMI
Category: SMD operational amplifiers
Description: IC: operational amplifier; SO8; 3÷32VDC; reel,tape; 200nA; Ch: dual
Type of integrated circuit: operational amplifier
Mounting: SMT
Number of channels: dual
Case: SO8
Operating temperature: -40...105°C
Input offset voltage: 10mV
Voltage supply range: 3...32V DC
Kind of package: reel; tape
Input offset current: 200nA
Category: SMD operational amplifiers
Description: IC: operational amplifier; SO8; 3÷32VDC; reel,tape; 200nA; Ch: dual
Type of integrated circuit: operational amplifier
Mounting: SMT
Number of channels: dual
Case: SO8
Operating temperature: -40...105°C
Input offset voltage: 10mV
Voltage supply range: 3...32V DC
Kind of package: reel; tape
Input offset current: 200nA
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| FSQ0765RSUDTU |
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Виробник: ONSEMI
Category: Voltage regulators - PWM circuits
Description: IC: PMIC; PWM controller,resonant mode controller; 2.28A; 650V
Type of integrated circuit: PMIC
Topology: flyback
Kind of integrated circuit: PWM controller; resonant mode controller
Case: TO220-6
Output current: 2.28A
Output voltage: 650V
Number of channels: 1
Mounting: THT
Operating temperature: -25...85°C
Operating voltage: 8...19V DC
Frequency: 66.7kHz
On-state resistance: 1.6Ω
Power: 70W
Input voltage: 85...265V
Category: Voltage regulators - PWM circuits
Description: IC: PMIC; PWM controller,resonant mode controller; 2.28A; 650V
Type of integrated circuit: PMIC
Topology: flyback
Kind of integrated circuit: PWM controller; resonant mode controller
Case: TO220-6
Output current: 2.28A
Output voltage: 650V
Number of channels: 1
Mounting: THT
Operating temperature: -25...85°C
Operating voltage: 8...19V DC
Frequency: 66.7kHz
On-state resistance: 1.6Ω
Power: 70W
Input voltage: 85...265V
на замовлення 318 шт:
термін постачання 21-30 дні (днів)| Кількість | Ціна |
|---|---|
| 3+ | 166.20 грн |
| 5+ | 138.42 грн |
| 8+ | 131.26 грн |
| 20+ | 124.10 грн |
| 25+ | 122.51 грн |
| 100+ | 119.32 грн |
| MC74HC1G14DBVT1G |
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Виробник: ONSEMI
Category: Gates, inverters
Description: IC: digital
Type of integrated circuit: digital
Category: Gates, inverters
Description: IC: digital
Type of integrated circuit: digital
на замовлення 12000 шт:
термін постачання 21-30 дні (днів)| Кількість | Ціна |
|---|---|
| 3000+ | 2.69 грн |
| DTA124XET1G |
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Виробник: ONSEMI
Category: PNP SMD transistors
Description: Transistor: PNP; bipolar; BRT; 50V; 100mA; 300mW; SC75,SOT416
Polarisation: bipolar
Kind of package: reel; tape
Kind of transistor: BRT
Mounting: SMD
Type of transistor: PNP
Case: SC75; SOT416
Collector current: 0.1A
Power dissipation: 0.3W
Quantity in set/package: 3000pcs.
Collector-emitter voltage: 50V
Current gain: 80...130
Base resistor: 22kΩ
Base-emitter resistor: 47kΩ
Category: PNP SMD transistors
Description: Transistor: PNP; bipolar; BRT; 50V; 100mA; 300mW; SC75,SOT416
Polarisation: bipolar
Kind of package: reel; tape
Kind of transistor: BRT
Mounting: SMD
Type of transistor: PNP
Case: SC75; SOT416
Collector current: 0.1A
Power dissipation: 0.3W
Quantity in set/package: 3000pcs.
Collector-emitter voltage: 50V
Current gain: 80...130
Base resistor: 22kΩ
Base-emitter resistor: 47kΩ
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| 1N5369BRLG | ![]() |
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Виробник: ONSEMI
Category: THT Zener diodes
Description: Diode: Zener; 5W; 51V; reel,tape; CASE017AA; single diode; 0.5uA
Type of diode: Zener
Power dissipation: 5W
Zener voltage: 51V
Kind of package: reel; tape
Case: CASE017AA
Mounting: THT
Tolerance: ±5%
Semiconductor structure: single diode
Leakage current: 0.5µA
Manufacturer series: 1N53xxB
Category: THT Zener diodes
Description: Diode: Zener; 5W; 51V; reel,tape; CASE017AA; single diode; 0.5uA
Type of diode: Zener
Power dissipation: 5W
Zener voltage: 51V
Kind of package: reel; tape
Case: CASE017AA
Mounting: THT
Tolerance: ±5%
Semiconductor structure: single diode
Leakage current: 0.5µA
Manufacturer series: 1N53xxB
на замовлення 2522 шт:
термін постачання 21-30 дні (днів)| Кількість | Ціна |
|---|---|
| 25+ | 17.13 грн |
| 27+ | 14.96 грн |
| 29+ | 14.16 грн |
| 30+ | 13.44 грн |
| UJ3C120150K3S |
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Виробник: ONSEMI
Category: THT N channel transistors
Description: Transistor: N-JFET / N-MOSFET; SiC; unipolar; cascode; 1.2kV; 166W
Mounting: THT
Type of transistor: N-JFET / N-MOSFET
Polarisation: unipolar
Technology: SiC
Case: TO247-3
Gate-source voltage: -25...25V
Gate charge: 63nC
On-state resistance: 0.33Ω
Drain current: 13.8A
Pulsed drain current: 38A
Power dissipation: 166W
Drain-source voltage: 1.2kV
Kind of package: tube
Kind of transistor: cascode
Kind of channel: enhancement
Category: THT N channel transistors
Description: Transistor: N-JFET / N-MOSFET; SiC; unipolar; cascode; 1.2kV; 166W
Mounting: THT
Type of transistor: N-JFET / N-MOSFET
Polarisation: unipolar
Technology: SiC
Case: TO247-3
Gate-source voltage: -25...25V
Gate charge: 63nC
On-state resistance: 0.33Ω
Drain current: 13.8A
Pulsed drain current: 38A
Power dissipation: 166W
Drain-source voltage: 1.2kV
Kind of package: tube
Kind of transistor: cascode
Kind of channel: enhancement
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| NCP2890DMR2G |
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Виробник: ONSEMI
Category: RTV - audio integrated circuits
Description: IC: audio amplifier; Pout: 1W; 2.5÷5.5VDC; Micro8; 8Ω
Type of integrated circuit: audio amplifier
Case: Micro8
Integrated circuit features: mono full-bridge: Bridge Tied Load (BTL)
Mounting: SMD
Kind of package: reel; tape
Output power: 1W
Supply voltage: 2.5...5.5V DC
Impedance: 8Ω
Category: RTV - audio integrated circuits
Description: IC: audio amplifier; Pout: 1W; 2.5÷5.5VDC; Micro8; 8Ω
Type of integrated circuit: audio amplifier
Case: Micro8
Integrated circuit features: mono full-bridge: Bridge Tied Load (BTL)
Mounting: SMD
Kind of package: reel; tape
Output power: 1W
Supply voltage: 2.5...5.5V DC
Impedance: 8Ω
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| MC74LVX4066DR2G |
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на замовлення 5000 шт:
термін постачання 21-30 дні (днів)| Кількість | Ціна |
|---|---|
| 2500+ | 13.19 грн |
| MC74LVX4066DTR2G |
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на замовлення 2500 шт:
термін постачання 21-30 дні (днів)| Кількість | Ціна |
|---|---|
| 2500+ | 14.39 грн |
| FL7760AM6X |
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Виробник: ONSEMI
Category: Voltage regulators - PWM circuits
Description: PMIC; DC/DC converter,LED driver; Uin: 8÷70V; -2.5÷1.5A; SOT23-6
Mounting: SMD
Output current: -2.5...1.5A
Input voltage: 8...70V
Number of channels: 1
Frequency: 1MHz
Kind of integrated circuit: DC/DC converter; LED driver
Application: for LED applications
Topology: buck
Type of integrated circuit: PMIC
Case: SOT23-6
Integrated circuit features: linear dimming; PWM
Kind of package: reel; tape
Category: Voltage regulators - PWM circuits
Description: PMIC; DC/DC converter,LED driver; Uin: 8÷70V; -2.5÷1.5A; SOT23-6
Mounting: SMD
Output current: -2.5...1.5A
Input voltage: 8...70V
Number of channels: 1
Frequency: 1MHz
Kind of integrated circuit: DC/DC converter; LED driver
Application: for LED applications
Topology: buck
Type of integrated circuit: PMIC
Case: SOT23-6
Integrated circuit features: linear dimming; PWM
Kind of package: reel; tape
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| FDP8860 |
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Виробник: ONSEMI
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 30V; 80A; Idm: 556A; 254W; TO220AB
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 30V
Drain current: 80A
Pulsed drain current: 556A
Power dissipation: 254W
Case: TO220AB
Gate-source voltage: ±20V
On-state resistance: 3.8mΩ
Mounting: THT
Gate charge: 222nC
Kind of package: tube
Kind of channel: enhancement
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 30V; 80A; Idm: 556A; 254W; TO220AB
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 30V
Drain current: 80A
Pulsed drain current: 556A
Power dissipation: 254W
Case: TO220AB
Gate-source voltage: ±20V
On-state resistance: 3.8mΩ
Mounting: THT
Gate charge: 222nC
Kind of package: tube
Kind of channel: enhancement
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| MJ14002G |
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Виробник: ONSEMI
Category: NPN THT transistors
Description: Transistor: NPN; bipolar; 80V; 60A; 300W; TO204,TO3
Type of transistor: NPN
Polarisation: bipolar
Collector-emitter voltage: 80V
Collector current: 60A
Power dissipation: 300W
Case: TO3; TO204
Mounting: THT
Kind of package: in-tray
Category: NPN THT transistors
Description: Transistor: NPN; bipolar; 80V; 60A; 300W; TO204,TO3
Type of transistor: NPN
Polarisation: bipolar
Collector-emitter voltage: 80V
Collector current: 60A
Power dissipation: 300W
Case: TO3; TO204
Mounting: THT
Kind of package: in-tray
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| NCP81074ADR2G |
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Виробник: ONSEMI
Category: MOSFET/IGBT drivers
Description: IC: driver; low-side,gate driver; SO8; -10÷10A; Ch: 1; 4.5÷20VDC
Type of integrated circuit: driver
Kind of integrated circuit: gate driver; low-side
Case: SO8
Output current: -10...10A
Number of channels: 1
Supply voltage: 4.5...20V DC
Mounting: SMD
Operating temperature: -40...140°C
Impulse rise time: 7ns
Pulse fall time: 7ns
Category: MOSFET/IGBT drivers
Description: IC: driver; low-side,gate driver; SO8; -10÷10A; Ch: 1; 4.5÷20VDC
Type of integrated circuit: driver
Kind of integrated circuit: gate driver; low-side
Case: SO8
Output current: -10...10A
Number of channels: 1
Supply voltage: 4.5...20V DC
Mounting: SMD
Operating temperature: -40...140°C
Impulse rise time: 7ns
Pulse fall time: 7ns
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| NCP81074AMNTBG |
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Виробник: ONSEMI
Category: MOSFET/IGBT drivers
Description: IC: driver; low-side,gate driver; DFN8; -10÷10A; Ch: 1; 4.5÷20VDC
Type of integrated circuit: driver
Kind of integrated circuit: gate driver; low-side
Case: DFN8
Output current: -10...10A
Number of channels: 1
Supply voltage: 4.5...20V DC
Mounting: SMD
Operating temperature: -40...140°C
Impulse rise time: 7ns
Pulse fall time: 7ns
Category: MOSFET/IGBT drivers
Description: IC: driver; low-side,gate driver; DFN8; -10÷10A; Ch: 1; 4.5÷20VDC
Type of integrated circuit: driver
Kind of integrated circuit: gate driver; low-side
Case: DFN8
Output current: -10...10A
Number of channels: 1
Supply voltage: 4.5...20V DC
Mounting: SMD
Operating temperature: -40...140°C
Impulse rise time: 7ns
Pulse fall time: 7ns
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| NTP7D3N15MC |
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Виробник: ONSEMI
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 150V; 101A; Idm: 574A; 166W; TO220-3
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 150V
Drain current: 101A
Pulsed drain current: 574A
Power dissipation: 166W
Case: TO220-3
Gate-source voltage: ±20V
On-state resistance: 7.3mΩ
Mounting: THT
Gate charge: 53nC
Kind of package: tube
Kind of channel: enhancement
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 150V; 101A; Idm: 574A; 166W; TO220-3
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 150V
Drain current: 101A
Pulsed drain current: 574A
Power dissipation: 166W
Case: TO220-3
Gate-source voltage: ±20V
On-state resistance: 7.3mΩ
Mounting: THT
Gate charge: 53nC
Kind of package: tube
Kind of channel: enhancement
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| NCV47711PDAJR2G |
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Виробник: ONSEMI
Category: LDO adjustable voltage regulators
Description: IC: voltage regulator; LDO,linear,adjustable; 5÷20V; 0.35A; SO8
Kind of package: reel; tape
Case: SO8
Mounting: SMD
Output current: 0.35A
Number of channels: 1
Output voltage: 5...20V
Type of integrated circuit: voltage regulator
Kind of voltage regulator: adjustable; LDO; linear
Application: automotive industry
Category: LDO adjustable voltage regulators
Description: IC: voltage regulator; LDO,linear,adjustable; 5÷20V; 0.35A; SO8
Kind of package: reel; tape
Case: SO8
Mounting: SMD
Output current: 0.35A
Number of channels: 1
Output voltage: 5...20V
Type of integrated circuit: voltage regulator
Kind of voltage regulator: adjustable; LDO; linear
Application: automotive industry
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| RGP10K |
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Виробник: ONSEMI
Category: THT universal diodes
Description: Diode: rectifying; THT; 800V; 1A; reel,tape; DO41
Type of diode: rectifying
Mounting: THT
Max. off-state voltage: 0.8kV
Load current: 1A
Semiconductor structure: single diode
Kind of package: reel; tape
Case: DO41
Category: THT universal diodes
Description: Diode: rectifying; THT; 800V; 1A; reel,tape; DO41
Type of diode: rectifying
Mounting: THT
Max. off-state voltage: 0.8kV
Load current: 1A
Semiconductor structure: single diode
Kind of package: reel; tape
Case: DO41
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| EGP10K |
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Виробник: ONSEMI
Category: THT universal diodes
Description: Diode: rectifying; THT; 800V; 1A; reel,tape; DO41; 75ns
Max. off-state voltage: 0.8kV
Case: DO41
Type of diode: rectifying
Kind of package: reel; tape
Semiconductor structure: single diode
Mounting: THT
Reverse recovery time: 75ns
Load current: 1A
Category: THT universal diodes
Description: Diode: rectifying; THT; 800V; 1A; reel,tape; DO41; 75ns
Max. off-state voltage: 0.8kV
Case: DO41
Type of diode: rectifying
Kind of package: reel; tape
Semiconductor structure: single diode
Mounting: THT
Reverse recovery time: 75ns
Load current: 1A
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| NSV60600MZ4T1G |
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Виробник: ONSEMI
Category: PNP SMD transistors
Description: Transistor: PNP; bipolar; 60V; 6A; 2W; SOT223-4,TO261-4
Type of transistor: PNP
Polarisation: bipolar
Collector-emitter voltage: 60V
Collector current: 6A
Power dissipation: 2W
Case: SOT223-4; TO261-4
Current gain: 120...360
Mounting: SMD
Kind of package: reel; tape
Frequency: 100MHz
Application: automotive industry
Category: PNP SMD transistors
Description: Transistor: PNP; bipolar; 60V; 6A; 2W; SOT223-4,TO261-4
Type of transistor: PNP
Polarisation: bipolar
Collector-emitter voltage: 60V
Collector current: 6A
Power dissipation: 2W
Case: SOT223-4; TO261-4
Current gain: 120...360
Mounting: SMD
Kind of package: reel; tape
Frequency: 100MHz
Application: automotive industry
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| NSV60600MZ4T3G |
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Виробник: ONSEMI
Category: PNP SMD transistors
Description: Transistor: PNP; bipolar; 60V; 6A; 2W; SOT223-4,TO261-4
Type of transistor: PNP
Polarisation: bipolar
Collector-emitter voltage: 60V
Collector current: 6A
Power dissipation: 2W
Case: SOT223-4; TO261-4
Current gain: 120...360
Mounting: SMD
Kind of package: reel; tape
Frequency: 100MHz
Application: automotive industry
Category: PNP SMD transistors
Description: Transistor: PNP; bipolar; 60V; 6A; 2W; SOT223-4,TO261-4
Type of transistor: PNP
Polarisation: bipolar
Collector-emitter voltage: 60V
Collector current: 6A
Power dissipation: 2W
Case: SOT223-4; TO261-4
Current gain: 120...360
Mounting: SMD
Kind of package: reel; tape
Frequency: 100MHz
Application: automotive industry
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| SZMMBZ5245BLT1G |
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Виробник: ONSEMI
Category: SMD Zener diodes
Description: Diode: Zener; 0.3W; 15V; SMD; reel,tape; SOT23; single diode; 0.1uA
Type of diode: Zener
Power dissipation: 0.3W
Zener voltage: 15V
Mounting: SMD
Tolerance: ±5%
Kind of package: reel; tape
Case: SOT23
Semiconductor structure: single diode
Manufacturer series: MMBZ52xxBLT1G
Leakage current: 0.1µA
Application: automotive industry
Category: SMD Zener diodes
Description: Diode: Zener; 0.3W; 15V; SMD; reel,tape; SOT23; single diode; 0.1uA
Type of diode: Zener
Power dissipation: 0.3W
Zener voltage: 15V
Mounting: SMD
Tolerance: ±5%
Kind of package: reel; tape
Case: SOT23
Semiconductor structure: single diode
Manufacturer series: MMBZ52xxBLT1G
Leakage current: 0.1µA
Application: automotive industry
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