| Фото | Назва | Виробник | Інформація | Доступність | Ціна без ПДВ | ||||||||||||||||
|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|
| RURG5060-F085 | ONSEMI |
Category: THT universal diodesDescription: Diode: rectifying; THT; 600V; 50A; tube; Ifsm: 150A; TO247-2; 90ns Type of diode: rectifying Mounting: THT Max. off-state voltage: 0.6kV Load current: 50A Semiconductor structure: single diode Kind of package: tube Max. forward impulse current: 150A Case: TO247-2 Reverse recovery time: 90ns Application: automotive industry |
товару немає в наявності |
В кошику од. на суму грн. | |||||||||||||||||
| BAT54CLT3G | ONSEMI |
Category: SMD Schottky diodesDescription: Diode: Schottky switching; SC59; SMD; 30V; 200mA; 5ns; 225mW Type of diode: Schottky switching Case: SC59 Mounting: SMD Max. off-state voltage: 30V Load current: 0.2A Max. forward voltage: 0.32V Max. load current: 0.2A Capacitance: 10pF Reverse recovery time: 5ns Max. forward impulse current: 0.6A Power dissipation: 0.225W Leakage current: 2µA |
товару немає в наявності |
В кошику од. на суму грн. | |||||||||||||||||
|
1N4002G | ONSEMI |
Category: THT universal diodesDescription: Diode: rectifying; THT; 100V; 1A; Ifsm: 30A; CASE59; bulk; Ufmax: 1.1V Type of diode: rectifying Mounting: THT Max. off-state voltage: 0.1kV Load current: 1A Semiconductor structure: single diode Max. forward impulse current: 30A Case: CASE59 Kind of package: bulk Max. forward voltage: 1.1V Manufacturer standard package: 1000pcs. |
на замовлення 118 шт: термін постачання 14-30 дні (днів) |
|
||||||||||||||||
|
1N4002RLG | ONSEMI |
Category: THT universal diodesDescription: Diode: rectifying; THT; 100V; 1A; Ifsm: 30A; CASE59; reel,tape Type of diode: rectifying Mounting: THT Max. off-state voltage: 0.1kV Load current: 1A Semiconductor structure: single diode Max. forward impulse current: 30A Case: CASE59 Kind of package: reel; tape Max. forward voltage: 1.1V Manufacturer standard package: 5000pcs. |
на замовлення 4921 шт: термін постачання 14-30 дні (днів) |
|
||||||||||||||||
| FUSB302TMPX | ONSEMI |
Category: Battery and battery cells controllersDescription: IC: interface; transceiver; WQFN14; 2.7÷5.5V; 5Gbps Type of integrated circuit: interface Kind of integrated circuit: transceiver USB speed: Full Speed Supply voltage: 2.7...5.5V Case: WQFN14 Mounting: SMD Operating temperature: -40...85°C Data transfer rate: 5Gbps DC supply current: 25µA Interface: USB; USB 3.1 |
товару немає в наявності |
Мінімальне замовлення: 3000 шт В кошику од. на суму грн. | |||||||||||||||||
|
FDB2614 | ONSEMI |
Category: SMD N channel transistorsDescription: Transistor: N-MOSFET; unipolar; 200V; 62A; 260W; D2PAK On-state resistance: 27mΩ Mounting: SMD Power dissipation: 260W Gate charge: 99nC Polarisation: unipolar Technology: PowerTrench® Drain current: 62A Kind of channel: enhancement Drain-source voltage: 200V Type of transistor: N-MOSFET Gate-source voltage: ±30V Kind of package: reel; tape Case: D2PAK |
товару немає в наявності |
Мінімальне замовлення: 800 шт В кошику од. на суму грн. | ||||||||||||||||
|
BD437G | ONSEMI |
Category: NPN THT transistorsDescription: Transistor: NPN; bipolar; 45V; 4A; 36W; TO225 Type of transistor: NPN Polarisation: bipolar Collector-emitter voltage: 45V Collector current: 4A Power dissipation: 36W Case: TO225 Mounting: THT Kind of package: bulk Frequency: 3MHz Current gain: 85...375 |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||||||||||
| BD437TG | ONSEMI |
Category: NPN THT transistorsDescription: Transistor: NPN; bipolar; 45V; 4A; 36W; TO225 Type of transistor: NPN Polarisation: bipolar Collector-emitter voltage: 45V Collector current: 4A Power dissipation: 36W Case: TO225 Mounting: THT Kind of package: bulk Frequency: 3MHz Current gain: 85...375 |
товару немає в наявності |
В кошику од. на суму грн. | |||||||||||||||||
|
74AC04MTC | ONSEMI |
Category: Gates, invertersDescription: IC: digital; NOT; Ch: 6; IN: 1; SMD; TSSOP14; 2÷6VDC; -40÷85°C; tube Type of integrated circuit: digital Number of channels: hex; 6 Mounting: SMD Case: TSSOP14 Operating temperature: -40...85°C Supply voltage: 2...6V DC Quiescent current: 20µA Number of inputs: 1 Kind of package: tube Family: AC Kind of gate: NOT |
на замовлення 192 шт: термін постачання 14-30 дні (днів) |
|
||||||||||||||||
|
74AC04MTCX | ONSEMI |
Category: Gates, invertersDescription: IC: digital; NOT; Ch: 6; IN: 1; SMD; TSSOP14; 2÷6VDC; -40÷85°C; AC Type of integrated circuit: digital Kind of gate: NOT Number of channels: hex; 6 Mounting: SMD Case: TSSOP14 Family: AC Number of inputs: 1 Kind of package: reel; tape Supply voltage: 2...6V DC Operating temperature: -40...85°C |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||||||||||
|
MUR1620CTRG | ONSEMI |
Category: THT universal diodesDescription: Diode: rectifying; THT; 200V; 8Ax2; Ifsm: 100A; TO220AB; tube; 85ns Type of diode: rectifying Mounting: THT Max. off-state voltage: 200V Load current: 8A x2 Semiconductor structure: common anode; double Case: TO220AB Kind of package: tube Reverse recovery time: 85ns Max. forward impulse current: 100A Heatsink thickness: 1.15...1.39mm Max. load current: 16A |
на замовлення 70 шт: термін постачання 14-30 дні (днів) |
|
||||||||||||||||
|
MUR1620CTG | ONSEMI |
Category: THT universal diodesDescription: Diode: rectifying; THT; 200V; 8Ax2; Ifsm: 100A; TO220AB; tube; 35ns Type of diode: rectifying Mounting: THT Max. off-state voltage: 200V Load current: 8A x2 Semiconductor structure: common cathode; double Case: TO220AB Kind of package: tube Reverse recovery time: 35ns Max. forward impulse current: 100A Heatsink thickness: 1.15...1.39mm Max. load current: 16A |
на замовлення 409 шт: термін постачання 14-30 дні (днів) |
|
||||||||||||||||
|
74AC04SCX | ONSEMI |
Category: Gates, invertersDescription: IC: digital; hex,inverter; NOT; Ch: 6; IN: 1; SMD; SOIC14; AC; 2÷6VDC Type of integrated circuit: digital Kind of gate: NOT Number of channels: 6 Mounting: SMD Case: SOIC14 Family: AC Number of inputs: 1 Kind of package: reel; tape Kind of integrated circuit: hex; inverter Supply voltage: 2...6V DC Manufacturer series: AC Operating temperature: -40...85°C |
товару немає в наявності |
Мінімальне замовлення: 2500 шт В кошику од. на суму грн. | ||||||||||||||||
|
MC74AC04DR2G | ONSEMI |
Category: Gates, invertersDescription: IC: digital; NOT; Ch: 6; IN: 1; CMOS; SMD; SO14; 2÷6VDC; -40÷85°C; 40uA Type of integrated circuit: digital Kind of gate: NOT Number of channels: hex; 6 Mounting: SMD Case: SO14 Family: AC Number of inputs: 1 Kind of package: reel; tape Supply voltage: 2...6V DC Operating temperature: -40...85°C Technology: CMOS Quiescent current: 40µA |
на замовлення 2072 шт: термін постачання 14-30 дні (днів) |
|
||||||||||||||||
|
MC74AC04DTR2G | ONSEMI |
Category: Gates, invertersDescription: IC: digital; hex,inverter; NOT; Ch: 6; IN: 1; CMOS; SMD; TSSOP14; AC Type of integrated circuit: digital Kind of gate: NOT Number of channels: 6 Mounting: SMD Case: TSSOP14 Family: AC Number of inputs: 1 Kind of package: reel; tape Kind of integrated circuit: hex; inverter Supply voltage: 2...6V DC Manufacturer series: AC Operating temperature: -40...85°C Technology: CMOS |
товару немає в наявності |
Мінімальне замовлення: 2500 шт В кошику од. на суму грн. | ||||||||||||||||
|
1N3595TR | ONSEMI |
Category: THT universal diodesDescription: Diode: rectifying; THT; 150V; 200mA; Ifsm: 4A; DO35; Ufmax: 1V; Ir: 3uA Type of diode: rectifying Mounting: THT Max. off-state voltage: 150V Load current: 0.2A Semiconductor structure: single diode Features of semiconductor devices: small signal Capacitance: 8pF Max. forward impulse current: 4A Case: DO35 Max. forward voltage: 1V Leakage current: 3µA Power dissipation: 0.5W Reverse recovery time: 3µs |
на замовлення 3001 шт: термін постачання 14-30 дні (днів) |
|
||||||||||||||||
| 1N3595 | ONSEMI |
Category: THT universal diodesDescription: Diode: switching; THT; 150V; 200mA; Ifsm: 200mA; DO35; Ufmax: 1V; 3us Type of diode: switching Mounting: THT Max. off-state voltage: 150V Load current: 0.2A Semiconductor structure: single diode Features of semiconductor devices: small signal Max. forward impulse current: 0.2A Case: DO35 Max. forward voltage: 1V Reverse recovery time: 3µs Max. load current: 0.2A |
товару немає в наявності |
Мінімальне замовлення: 5000 шт В кошику од. на суму грн. | |||||||||||||||||
| KA5M0365RYDTU | ONSEMI |
Category: Voltage regulators - PWM circuitsDescription: IC: PMIC; PWM controller; 2.4A; 650V; 67kHz; Ch: 1; TO220F-4FL; 4.5Ω Type of integrated circuit: PMIC Kind of integrated circuit: PWM controller Output current: 2.4A Output voltage: 650V Frequency: 67kHz Number of channels: 1 Case: TO220F-4FL Mounting: THT Operating temperature: -40...85°C Topology: flyback; forward On-state resistance: 4.5Ω Duty cycle factor: 72...82% Kind of package: tube Power: 75W Operating voltage: 9...27V DC |
товару немає в наявності |
Мінімальне замовлення: 1000 шт В кошику од. на суму грн. | |||||||||||||||||
| NCP4328ASNT1G | ONSEMI |
Category: Voltage regulators - DC/DC circuitsDescription: IC: PMIC; TSOP5; 2.5÷40VDC Mounting: SMD Type of integrated circuit: PMIC Operating temperature: -40...125°C Case: TSOP5 Number of channels: 1 Operating voltage: 2.5...40V DC |
товару немає в наявності |
Мінімальне замовлення: 3000 шт В кошику од. на суму грн. | |||||||||||||||||
| NCP4328BSNT1G | ONSEMI |
Category: Voltage regulators - DC/DC circuitsDescription: IC: PMIC; TSOP6; 2.5÷40VDC Mounting: SMD Type of integrated circuit: PMIC Operating temperature: -40...125°C Case: TSOP6 Number of channels: 1 Frequency: 1kHz Operating voltage: 2.5...40V DC |
товару немає в наявності |
Мінімальне замовлення: 3000 шт В кошику од. на суму грн. | |||||||||||||||||
|
MC74AC74DR2G | ONSEMI |
Category: Flip-FlopsDescription: IC: digital; D flip-flop; Ch: 2; TTL; SMD; SO14; 40uA; reel,tape Type of integrated circuit: digital Kind of integrated circuit: D flip-flop Number of channels: 2 Mounting: SMD Case: SO14 Operating temperature: -40...85°C Quiescent current: 40µA Supply voltage: 2...6V DC Technology: TTL Trigger: positive-edge-triggered Kind of package: reel; tape |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||||||||||
|
MC74AC74DTR2G | ONSEMI |
Category: Flip-FlopsDescription: IC: digital; D flip-flop; Ch: 2; CMOS; SMD; TSSOP14; 40uA; reel,tape Type of integrated circuit: digital Kind of integrated circuit: D flip-flop Number of channels: 2 Mounting: SMD Case: TSSOP14 Operating temperature: -40...85°C Quiescent current: 40µA Supply voltage: 2...6V DC Technology: CMOS Trigger: positive-edge-triggered Kind of package: reel; tape |
товару немає в наявності |
Мінімальне замовлення: 5000 шт В кошику од. на суму грн. | ||||||||||||||||
|
MC34072ADR2G | ONSEMI |
Category: SMD operational amplifiersDescription: IC: operational amplifier; 4.5MHz; Ch: 2; ±1.5÷22VDC,3÷44VDC; SO8 Type of integrated circuit: operational amplifier Bandwidth: 4.5MHz Number of channels: dual; 2 Mounting: SMT Voltage supply range: ± 1.5...22V DC; 3...44V DC Case: SO8 Operating temperature: 0...70°C Slew rate: 13V/μs Input offset voltage: 7mV Kind of package: reel; tape Input bias current: 0.7µA Input offset current: 300nA |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||||||||||
| MC34072AMTTBG | ONSEMI |
Category: SMD operational amplifiersDescription: IC: operational amplifier; 4.5MHz; Ch: 2; ±1.5÷22VDC,3÷44VDC; 7mV Type of integrated circuit: operational amplifier Bandwidth: 4.5MHz Number of channels: dual; 2 Mounting: SMT Voltage supply range: ± 1.5...22V DC; 3...44V DC Case: WQFN10 Operating temperature: 0...70°C Slew rate: 13V/μs Input offset voltage: 7mV Kind of package: reel; tape Input bias current: 0.7µA Input offset current: 300nA |
товару немає в наявності |
В кошику од. на суму грн. | |||||||||||||||||
|
MC34072VDR2G | ONSEMI |
Category: SMD operational amplifiersDescription: IC: operational amplifier; 4.5MHz; Ch: 2; ±1.5÷22VDC,3÷44VDC; SO8 Type of integrated circuit: operational amplifier Bandwidth: 4.5MHz Number of channels: dual; 2 Mounting: SMT Voltage supply range: ± 1.5...22V DC; 3...44V DC Case: SO8 Operating temperature: -40...125°C Slew rate: 13V/μs Input offset voltage: 7mV Kind of package: reel; tape Input bias current: 0.7µA Input offset current: 300nA |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||||||||||
|
2N6520TA | ONSEMI |
Category: PNP THT transistorsDescription: Transistor: PNP; bipolar; 350V; 0.5A; 0.625W; TO92 Formed Kind of package: Ammo Pack Mounting: THT Collector-emitter voltage: 350V Power dissipation: 0.625W Polarisation: bipolar Type of transistor: PNP Current gain: 30...200 Case: TO92 Formed Frequency: 40...200MHz Collector current: 0.5A |
на замовлення 432 шт: термін постачання 14-30 дні (днів) |
|
||||||||||||||||
|
CAT24C02TDI-GT3A | ONSEMI |
Category: Serial EEPROM memories - integ. circ.Description: IC: EEPROM memory; 2kbEEPROM; I2C; 256x8bit; 1.7÷5.5V; SOT23-5 Type of integrated circuit: EEPROM memory Kind of memory: EEPROM Memory: 2kb EEPROM Interface: I2C Memory organisation: 256x8bit Operating voltage: 1.7...5.5V Mounting: SMD Case: SOT23-5 |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||||||||||
|
NCP3063BDR2G | ONSEMI |
Category: Voltage regulators - DC/DC circuitsDescription: PMIC; DC/DC converter; Uin: 3÷40VDC; Uout: 1.25÷40VDC; 1.5A; SO8 Type of integrated circuit: PMIC Kind of integrated circuit: DC/DC converter Input voltage: 3...40V DC Output voltage: 1.25...40V DC Output current: 1.5A Case: SO8 Mounting: SMD Frequency: 110...190kHz Topology: boost; buck; buck-boost Number of channels: 1 Operating temperature: -40...125°C Kind of package: reel; tape Operating voltage: 5...40V DC |
на замовлення 368 шт: термін постачання 14-30 дні (днів) |
|
||||||||||||||||
|
MBRB2545CTT4G | ONSEMI |
Category: SMD Schottky diodesDescription: Diode: Schottky rectifying; D2PAK; SMD; 45V; 15Ax2; reel,tape Mounting: SMD Max. forward voltage: 0.65V Max. off-state voltage: 45V Load current: 15A x2 Max. load current: 30A Kind of package: reel; tape Semiconductor structure: common cathode; double Case: D2PAK Type of diode: Schottky rectifying |
на замовлення 123 шт: термін постачання 14-30 дні (днів) |
|
||||||||||||||||
|
MUR1540G | ONSEMI |
Category: THT universal diodesDescription: Diode: rectifying; THT; 400V; 15A; Ifsm: 200A; TO220-2; tube; 60ns Type of diode: rectifying Mounting: THT Max. off-state voltage: 0.4kV Load current: 15A Semiconductor structure: single diode Case: TO220-2 Max. forward impulse current: 200A Kind of package: tube Max. load current: 30A Reverse recovery time: 60ns Heatsink thickness: 1.14...1.39mm |
на замовлення 103 шт: термін постачання 14-30 дні (днів) |
|
||||||||||||||||
|
MBRS1540T3G | ONSEMI |
Category: SMD Schottky diodesDescription: Diode: Schottky rectifying; SMB; SMD; 40V; 1.5A; reel,tape Type of diode: Schottky rectifying Case: SMB Mounting: SMD Max. off-state voltage: 40V Load current: 1.5A Semiconductor structure: single diode Max. forward voltage: 0.54V Max. load current: 3A Kind of package: reel; tape |
на замовлення 520 шт: термін постачання 14-30 дні (днів) |
|
||||||||||||||||
|
FQPF27P06 | ONSEMI |
Category: THT P channel transistorsDescription: Transistor: P-MOSFET; unipolar; -60V; -12A; 47W; TO220FP Type of transistor: P-MOSFET Technology: QFET® Polarisation: unipolar Drain-source voltage: -60V Drain current: -12A Power dissipation: 47W Case: TO220FP Gate-source voltage: ±25V On-state resistance: 70mΩ Mounting: THT Gate charge: 43nC Kind of package: tube Kind of channel: enhancement |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||||||||||
|
FQB27P06TM | ONSEMI |
Category: SMD P channel transistorsDescription: Transistor: P-MOSFET; unipolar; -60V; -19.1A; 120W; D2PAK Type of transistor: P-MOSFET Technology: QFET® Polarisation: unipolar Drain-source voltage: -60V Drain current: -19.1A Power dissipation: 120W Case: D2PAK Gate-source voltage: ±25V On-state resistance: 70mΩ Mounting: SMD Gate charge: 43nC Kind of package: reel; tape Kind of channel: enhancement |
на замовлення 545 шт: термін постачання 14-30 дні (днів) |
|
||||||||||||||||
| MJ15001G | ONSEMI |
Category: NPN THT transistorsDescription: Transistor: NPN; bipolar; 140V; 15A; 200W; TO3 Type of transistor: NPN Polarisation: bipolar Collector-emitter voltage: 140V Collector current: 15A Power dissipation: 200W Case: TO3 Current gain: 25...150 Mounting: THT Kind of package: in-tray Frequency: 2MHz |
товару немає в наявності |
В кошику од. на суму грн. | |||||||||||||||||
|
MC14512BDR2G | ONSEMI |
Category: Decoders, multiplexers, switchesDescription: IC: digital; data selector; Ch: 8; IN: 8; TTL; SMD; SO16; HEF4000B Supply voltage: 3...18V DC Type of integrated circuit: digital Operating temperature: -40...85°C Technology: TTL Number of inputs: 8 Kind of package: reel; tape Case: SO16 Family: HEF4000B Kind of integrated circuit: data selector Number of channels: 8 Mounting: SMD |
на замовлення 2486 шт: термін постачання 14-30 дні (днів) |
|
||||||||||||||||
|
FCPF16N60 | ONSEMI |
Category: THT N channel transistorsDescription: Transistor: N-MOSFET; SJ-MOSFET; unipolar; 600V; 10.1A; Idm: 48A Type of transistor: N-MOSFET Technology: SJ-MOSFET Polarisation: unipolar Drain-source voltage: 600V Drain current: 10.1A Power dissipation: 37.9W Case: TO220FP Gate-source voltage: ±30V On-state resistance: 0.26Ω Mounting: THT Kind of package: tube Kind of channel: enhancement Pulsed drain current: 48A Gate charge: 70nC |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||||||||||
|
CAT24C256YI-GT3 | ONSEMI |
Category: Serial EEPROM memories - integ. circ.Description: IC: EEPROM memory; 256kbEEPROM; I2C; 32kx8bit; 1.8÷5.5V; TSSOP8 Type of integrated circuit: EEPROM memory Interface: I2C Case: TSSOP8 Mounting: SMD Kind of memory: EEPROM Memory: 256kb EEPROM Memory organisation: 32kx8bit Operating voltage: 1.8...5.5V |
на замовлення 36 шт: термін постачання 14-30 дні (днів) |
|
||||||||||||||||
| NV24C256MUW3VTBG | ONSEMI |
Category: Serial EEPROM memories - integ. circ.Description: IC: EEPROM memory; 256kbEEPROM; I2C; 32kx8bit; 2.5÷5.5V; 1MHz Type of integrated circuit: EEPROM memory Kind of memory: EEPROM Interface: I2C Memory organisation: 32kx8bit Mounting: SMD Case: uDFN8 Kind of interface: serial Operating temperature: -40...125°C Access time: 40ns Operating voltage: 2.5...5.5V Clock frequency: 1MHz Memory: 256kb EEPROM Kind of package: reel; tape |
товару немає в наявності |
Мінімальне замовлення: 3000 шт В кошику од. на суму грн. | |||||||||||||||||
| CAV24C256WE-GT3 | ONSEMI |
Category: Serial EEPROM memories - integ. circ.Description: IC: EEPROM memory; 256kbEEPROM; I2C; 32kx8bit; 2.5÷5.5V; 1MHz Type of integrated circuit: EEPROM memory Kind of memory: EEPROM Interface: I2C Memory organisation: 32kx8bit Mounting: SMD Case: SOIC8 Kind of interface: serial Operating temperature: -40...125°C Access time: 400ns Operating voltage: 2.5...5.5V Clock frequency: 1MHz Memory: 256kb EEPROM Kind of package: reel; tape |
товару немає в наявності |
В кошику од. на суму грн. | |||||||||||||||||
| CAV24C256YE-GT3 | ONSEMI |
Category: Serial EEPROM memories - integ. circ.Description: IC: EEPROM memory; 256kbEEPROM; I2C; 32kx8bit; 2.5÷5.5V; 1MHz Type of integrated circuit: EEPROM memory Kind of memory: EEPROM Interface: I2C Memory organisation: 32kx8bit Mounting: SMD Case: TSSOP8 Kind of interface: serial Operating temperature: -40...125°C Access time: 400ns Operating voltage: 2.5...5.5V Clock frequency: 1MHz Memory: 256kb EEPROM Kind of package: reel; tape |
товару немає в наявності |
Мінімальне замовлення: 3000 шт В кошику од. на суму грн. | |||||||||||||||||
| NCP1246BLD065R2G | ONSEMI |
Category: Voltage regulators - DC/DC circuitsDescription: IC: PMIC; AC/DC switcher,PWM controller; SO7; flyback Type of integrated circuit: PMIC Kind of integrated circuit: AC/DC switcher; PWM controller Output current: 500...800mA Frequency: 58...72kHz Mounting: SMD Case: SO7 Topology: flyback Number of channels: 1 Operating temperature: -40...125°C Operating voltage: 8.9...26.5V DC |
товару немає в наявності |
Мінімальне замовлення: 2500 шт В кошику од. на суму грн. | |||||||||||||||||
| MC74HC165ADR2G-Q | ONSEMI |
Category: Shift registersDescription: IC: digital; shift register,parallel in; Ch: 1; SMD; SOIC16; HC Type of integrated circuit: digital Kind of integrated circuit: parallel in; shift register Mounting: SMD Case: SOIC16 Family: HC Supply voltage: 2...6V Trigger: positive-edge-triggered Number of inputs: 9 Number of outputs: 1 Number of channels: 1 Delay time: 225ns Kind of output: complementary; push-pull Operating temperature: -55...125°C |
товару немає в наявності |
В кошику од. на суму грн. | |||||||||||||||||
|
MC74HC165ADTR2G-Q | ONSEMI |
Category: Shift registersDescription: IC: digital; shift register,parallel in; Ch: 1; SMD; TSSOP16; HC Type of integrated circuit: digital Kind of integrated circuit: parallel in; shift register Mounting: SMD Case: TSSOP16 Family: HC Supply voltage: 2...6V Trigger: positive-edge-triggered Number of inputs: 9 Number of outputs: 1 Number of channels: 1 Delay time: 225ns Kind of output: complementary; push-pull Operating temperature: -55...125°C |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||||||||||
| MC74HC165AMN2TWG | ONSEMI |
Category: Shift registersDescription: IC: digital; shift register,parallel in; Ch: 1; SMD; QFN16; HC; IN: 9 Type of integrated circuit: digital Kind of integrated circuit: parallel in; shift register Mounting: SMD Case: QFN16 Family: HC Supply voltage: 2...6V Trigger: positive-edge-triggered Number of inputs: 9 Number of outputs: 1 Number of channels: 1 Kind of output: complementary; push-pull Operating temperature: -55...125°C |
товару немає в наявності |
В кошику од. на суму грн. | |||||||||||||||||
| MC74HC165AMN2TWG-Q | ONSEMI |
Category: Shift registersDescription: IC: digital; shift register,parallel in; SMD; QFN16; -55÷125°C Type of integrated circuit: digital Kind of integrated circuit: parallel in; shift register Mounting: SMD Case: QFN16 Supply voltage: 4.5...5.5V Number of inputs: 9 Delay time: 225ns Kind of output: complementary Operating temperature: -55...125°C |
товару немає в наявності |
В кошику од. на суму грн. | |||||||||||||||||
|
FDS3590 | ONSEMI |
Category: SMD N channel transistorsDescription: Transistor: N-MOSFET; unipolar; 80V; 6.5A; 2.5W; SO8 On-state resistance: 86mΩ Mounting: SMD Power dissipation: 2.5W Polarisation: unipolar Drain current: 6.5A Kind of channel: enhancement Drain-source voltage: 80V Type of transistor: N-MOSFET Gate-source voltage: ±20V Kind of package: reel; tape Case: SO8 |
на замовлення 417 шт: термін постачання 14-30 дні (днів) |
|
||||||||||||||||
|
KSC2383YTA | ONSEMI |
Category: NPN THT transistorsDescription: Transistor: NPN; bipolar; 160V; 1A; 0.9W; TO92 Formed Type of transistor: NPN Polarisation: bipolar Collector-emitter voltage: 160V Collector current: 1A Power dissipation: 0.9W Case: TO92 Formed Current gain: 160...320 Mounting: THT Kind of package: Ammo Pack Frequency: 100MHz |
на замовлення 2717 шт: термін постачання 14-30 дні (днів) |
|
||||||||||||||||
|
KSC2383OTA | ONSEMI |
Category: NPN THT transistorsDescription: Transistor: NPN; bipolar; 160V; 1A; 0.9W; TO92 Formed Type of transistor: NPN Polarisation: bipolar Collector-emitter voltage: 160V Collector current: 1A Power dissipation: 0.9W Case: TO92 Formed Current gain: 100...200 Mounting: THT Kind of package: Ammo Pack Frequency: 100MHz |
на замовлення 1103 шт: термін постачання 14-30 дні (днів) |
|
||||||||||||||||
|
FDMS86101 | ONSEMI |
Category: SMD N channel transistorsDescription: Transistor: N-MOSFET; unipolar; 100V; 60A; 104W; PQFN8 Type of transistor: N-MOSFET Polarisation: unipolar Drain-source voltage: 100V Drain current: 60A Power dissipation: 104W Case: PQFN8 Gate-source voltage: ±20V On-state resistance: 14mΩ Mounting: SMD Gate charge: 55nC Kind of package: reel; tape Kind of channel: enhancement Technology: PowerTrench® |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||||||||||
| FDMS86101A | ONSEMI |
Category: SMD N channel transistorsDescription: Transistor: N-MOSFET; unipolar; 100V; 60A; Idm: 180A; 104W; Power56 Type of transistor: N-MOSFET Polarisation: unipolar Drain-source voltage: 100V Drain current: 60A Pulsed drain current: 180A Power dissipation: 104W Case: Power56 Gate-source voltage: ±20V On-state resistance: 13.5mΩ Mounting: SMD Gate charge: 58nC Kind of package: reel; tape Kind of channel: enhancement |
товару немає в наявності |
В кошику од. на суму грн. | |||||||||||||||||
|
FDMS86101DC | ONSEMI |
Category: SMD N channel transistorsDescription: Transistor: N-MOSFET; unipolar; 100V; 60A; 125W; DFN8 Type of transistor: N-MOSFET Polarisation: unipolar Drain-source voltage: 100V Drain current: 60A Power dissipation: 125W Case: DFN8 Gate-source voltage: ±20V On-state resistance: 13mΩ Mounting: SMD Kind of package: reel; tape Kind of channel: enhancement |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||||||||||
|
MC14021BDR2G | ONSEMI |
Category: Shift registersDescription: IC: digital; Ch: 1; CMOS; SMD; SO16; HEF4000B; -55÷125°C; 3÷18VDC Type of integrated circuit: digital Kind of integrated circuit: 8bit; asynchronous; static shift register; synchronous Number of channels: 1 Technology: CMOS Mounting: SMD Case: SO16 Family: HEF4000B Operating temperature: -55...125°C Supply voltage: 3...18V DC Kind of package: reel; tape Quiescent current: 600µA |
на замовлення 9143 шт: термін постачання 14-30 дні (днів) |
|
||||||||||||||||
|
MC14049BDG | ONSEMI |
Category: Buffers, transceivers, driversDescription: IC: digital; buffer,inverting; Ch: 6; CMOS; SMD; SO16; -55÷125°C Type of integrated circuit: digital Kind of integrated circuit: buffer; inverting Number of channels: 6 Technology: CMOS Mounting: SMD Case: SO16 Supply voltage: 3...18V DC Operating temperature: -55...125°C Kind of package: tube |
на замовлення 193 шт: термін постачання 14-30 дні (днів) |
|
||||||||||||||||
|
MC14082BDG | ONSEMI |
Category: Gates, invertersDescription: IC: digital; AND; Ch: 2; IN: 4; CMOS; SMD; SO14; 3÷18VDC; -55÷125°C Delay time: 130ns Mounting: SMD Supply voltage: 3...18V DC Kind of gate: AND Type of integrated circuit: digital Operating temperature: -55...125°C Technology: CMOS Number of inputs: 4 Kind of package: tube Case: SO14 Family: HEF4000B Number of channels: dual; 2 |
на замовлення 293 шт: термін постачання 14-30 дні (днів) |
|
||||||||||||||||
|
MC14025BDG | ONSEMI |
Category: Gates, invertersDescription: IC: digital; NOR; Ch: 3; IN: 3; CMOS; SMD; SO14; 3÷18VDC; -55÷125°C Type of integrated circuit: digital Kind of gate: NOR Number of channels: triple; 3 Number of inputs: 3 Mounting: SMD Case: SO14 Family: HEF4000B Technology: CMOS Kind of package: tube Delay time: 130ns Supply voltage: 3...18V DC Operating temperature: -55...125°C |
на замовлення 20 шт: термін постачання 14-30 дні (днів) |
|
||||||||||||||||
|
MC14013BDTR2G | ONSEMI |
Category: Flip-FlopsDescription: IC: digital; D flip-flop; Ch: 2; IN: 4; CMOS; SMD; TSSOP14; reel,tape Type of integrated circuit: digital Kind of integrated circuit: D flip-flop Number of channels: 2 Technology: CMOS Mounting: SMD Case: TSSOP14 Operating temperature: -55...125°C Supply voltage: 3...18V DC Kind of package: reel; tape Number of inputs: 4 |
товару немає в наявності |
Мінімальне замовлення: 2500 шт В кошику од. на суму грн. | ||||||||||||||||
|
MC74ACT74DG | ONSEMI |
Category: Flip-FlopsDescription: IC: digital; D flip-flop; Ch: 2; CMOS; ACT; SMD; SO14 Type of integrated circuit: digital Kind of integrated circuit: D flip-flop Number of channels: 2 Technology: CMOS Mounting: SMD Case: SO14 Operating temperature: -40...85°C Supply voltage: 4.5...5.5V DC Manufacturer series: ACT Trigger: positive-edge-triggered |
на замовлення 20 шт: термін постачання 14-30 дні (днів) |
|
||||||||||||||||
|
MC74ACT74DTR2G | ONSEMI |
Category: Flip-FlopsDescription: IC: digital; D flip-flop; Ch: 2; IN: 4; TTL; ACT; SMD; TSSOP14; ACT Type of integrated circuit: digital Kind of integrated circuit: D flip-flop Number of channels: 2 Number of inputs: 4 Technology: TTL Mounting: SMD Case: TSSOP14 Operating temperature: -40...85°C Family: ACT Supply voltage: 4.5...5.5V DC Manufacturer series: ACT Kind of package: reel; tape |
товару немає в наявності |
Мінімальне замовлення: 2500 шт В кошику од. на суму грн. | ||||||||||||||||
|
ES2D | ONSEMI |
Category: SMD universal diodesDescription: Diode: rectifying; SMD; 200V; 2A; 20ns; SMB; Ufmax: 0.9V; Ifsm: 50A Type of diode: rectifying Mounting: SMD Max. off-state voltage: 200V Load current: 2A Reverse recovery time: 20ns Semiconductor structure: single diode Features of semiconductor devices: fast switching Case: SMB Max. forward voltage: 0.9V Max. forward impulse current: 50A Kind of package: reel; tape Power dissipation: 1.66W Leakage current: 0.35mA Capacitance: 18pF |
на замовлення 1942 шт: термін постачання 14-30 дні (днів) |
|
||||||||||||||||
| ES2DAF | ONSEMI |
Category: SMD universal diodesDescription: Diode: rectifying; SMD; 200V; 2A; 35ns; SMA flat; Ufmax: 950mV Type of diode: rectifying Mounting: SMD Max. off-state voltage: 200V Load current: 2A Reverse recovery time: 35ns Semiconductor structure: single diode Case: SMA flat Max. forward voltage: 0.95V Kind of package: reel; tape |
товару немає в наявності |
В кошику од. на суму грн. |
| RURG5060-F085 |
![]() |
Виробник: ONSEMI
Category: THT universal diodes
Description: Diode: rectifying; THT; 600V; 50A; tube; Ifsm: 150A; TO247-2; 90ns
Type of diode: rectifying
Mounting: THT
Max. off-state voltage: 0.6kV
Load current: 50A
Semiconductor structure: single diode
Kind of package: tube
Max. forward impulse current: 150A
Case: TO247-2
Reverse recovery time: 90ns
Application: automotive industry
Category: THT universal diodes
Description: Diode: rectifying; THT; 600V; 50A; tube; Ifsm: 150A; TO247-2; 90ns
Type of diode: rectifying
Mounting: THT
Max. off-state voltage: 0.6kV
Load current: 50A
Semiconductor structure: single diode
Kind of package: tube
Max. forward impulse current: 150A
Case: TO247-2
Reverse recovery time: 90ns
Application: automotive industry
товару немає в наявності
В кошику
од. на суму грн.
| BAT54CLT3G |
![]() |
Виробник: ONSEMI
Category: SMD Schottky diodes
Description: Diode: Schottky switching; SC59; SMD; 30V; 200mA; 5ns; 225mW
Type of diode: Schottky switching
Case: SC59
Mounting: SMD
Max. off-state voltage: 30V
Load current: 0.2A
Max. forward voltage: 0.32V
Max. load current: 0.2A
Capacitance: 10pF
Reverse recovery time: 5ns
Max. forward impulse current: 0.6A
Power dissipation: 0.225W
Leakage current: 2µA
Category: SMD Schottky diodes
Description: Diode: Schottky switching; SC59; SMD; 30V; 200mA; 5ns; 225mW
Type of diode: Schottky switching
Case: SC59
Mounting: SMD
Max. off-state voltage: 30V
Load current: 0.2A
Max. forward voltage: 0.32V
Max. load current: 0.2A
Capacitance: 10pF
Reverse recovery time: 5ns
Max. forward impulse current: 0.6A
Power dissipation: 0.225W
Leakage current: 2µA
товару немає в наявності
В кошику
од. на суму грн.
| 1N4002G |
![]() |
Виробник: ONSEMI
Category: THT universal diodes
Description: Diode: rectifying; THT; 100V; 1A; Ifsm: 30A; CASE59; bulk; Ufmax: 1.1V
Type of diode: rectifying
Mounting: THT
Max. off-state voltage: 0.1kV
Load current: 1A
Semiconductor structure: single diode
Max. forward impulse current: 30A
Case: CASE59
Kind of package: bulk
Max. forward voltage: 1.1V
Manufacturer standard package: 1000pcs.
Category: THT universal diodes
Description: Diode: rectifying; THT; 100V; 1A; Ifsm: 30A; CASE59; bulk; Ufmax: 1.1V
Type of diode: rectifying
Mounting: THT
Max. off-state voltage: 0.1kV
Load current: 1A
Semiconductor structure: single diode
Max. forward impulse current: 30A
Case: CASE59
Kind of package: bulk
Max. forward voltage: 1.1V
Manufacturer standard package: 1000pcs.
на замовлення 118 шт:
термін постачання 14-30 дні (днів)
| Кількість | Ціна без ПДВ |
|---|---|
| 42+ | 10.84 грн |
| 72+ | 5.87 грн |
| 100+ | 4.39 грн |
| 1N4002RLG |
![]() |
Виробник: ONSEMI
Category: THT universal diodes
Description: Diode: rectifying; THT; 100V; 1A; Ifsm: 30A; CASE59; reel,tape
Type of diode: rectifying
Mounting: THT
Max. off-state voltage: 0.1kV
Load current: 1A
Semiconductor structure: single diode
Max. forward impulse current: 30A
Case: CASE59
Kind of package: reel; tape
Max. forward voltage: 1.1V
Manufacturer standard package: 5000pcs.
Category: THT universal diodes
Description: Diode: rectifying; THT; 100V; 1A; Ifsm: 30A; CASE59; reel,tape
Type of diode: rectifying
Mounting: THT
Max. off-state voltage: 0.1kV
Load current: 1A
Semiconductor structure: single diode
Max. forward impulse current: 30A
Case: CASE59
Kind of package: reel; tape
Max. forward voltage: 1.1V
Manufacturer standard package: 5000pcs.
на замовлення 4921 шт:
термін постачання 14-30 дні (днів)
| Кількість | Ціна без ПДВ |
|---|---|
| 42+ | 10.84 грн |
| 53+ | 7.97 грн |
| 63+ | 6.71 грн |
| 73+ | 5.75 грн |
| 100+ | 4.93 грн |
| 250+ | 4.03 грн |
| 500+ | 3.46 грн |
| 1000+ | 3.06 грн |
| FUSB302TMPX |
![]() |
Виробник: ONSEMI
Category: Battery and battery cells controllers
Description: IC: interface; transceiver; WQFN14; 2.7÷5.5V; 5Gbps
Type of integrated circuit: interface
Kind of integrated circuit: transceiver
USB speed: Full Speed
Supply voltage: 2.7...5.5V
Case: WQFN14
Mounting: SMD
Operating temperature: -40...85°C
Data transfer rate: 5Gbps
DC supply current: 25µA
Interface: USB; USB 3.1
Category: Battery and battery cells controllers
Description: IC: interface; transceiver; WQFN14; 2.7÷5.5V; 5Gbps
Type of integrated circuit: interface
Kind of integrated circuit: transceiver
USB speed: Full Speed
Supply voltage: 2.7...5.5V
Case: WQFN14
Mounting: SMD
Operating temperature: -40...85°C
Data transfer rate: 5Gbps
DC supply current: 25µA
Interface: USB; USB 3.1
товару немає в наявності
Мінімальне замовлення: 3000 шт
В кошику
од. на суму грн.
| FDB2614 |
![]() |
Виробник: ONSEMI
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 200V; 62A; 260W; D2PAK
On-state resistance: 27mΩ
Mounting: SMD
Power dissipation: 260W
Gate charge: 99nC
Polarisation: unipolar
Technology: PowerTrench®
Drain current: 62A
Kind of channel: enhancement
Drain-source voltage: 200V
Type of transistor: N-MOSFET
Gate-source voltage: ±30V
Kind of package: reel; tape
Case: D2PAK
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 200V; 62A; 260W; D2PAK
On-state resistance: 27mΩ
Mounting: SMD
Power dissipation: 260W
Gate charge: 99nC
Polarisation: unipolar
Technology: PowerTrench®
Drain current: 62A
Kind of channel: enhancement
Drain-source voltage: 200V
Type of transistor: N-MOSFET
Gate-source voltage: ±30V
Kind of package: reel; tape
Case: D2PAK
товару немає в наявності
Мінімальне замовлення: 800 шт
В кошику
од. на суму грн.
| BD437G |
![]() |
Виробник: ONSEMI
Category: NPN THT transistors
Description: Transistor: NPN; bipolar; 45V; 4A; 36W; TO225
Type of transistor: NPN
Polarisation: bipolar
Collector-emitter voltage: 45V
Collector current: 4A
Power dissipation: 36W
Case: TO225
Mounting: THT
Kind of package: bulk
Frequency: 3MHz
Current gain: 85...375
Category: NPN THT transistors
Description: Transistor: NPN; bipolar; 45V; 4A; 36W; TO225
Type of transistor: NPN
Polarisation: bipolar
Collector-emitter voltage: 45V
Collector current: 4A
Power dissipation: 36W
Case: TO225
Mounting: THT
Kind of package: bulk
Frequency: 3MHz
Current gain: 85...375
товару немає в наявності
В кошику
од. на суму грн.
| BD437TG |
![]() |
Виробник: ONSEMI
Category: NPN THT transistors
Description: Transistor: NPN; bipolar; 45V; 4A; 36W; TO225
Type of transistor: NPN
Polarisation: bipolar
Collector-emitter voltage: 45V
Collector current: 4A
Power dissipation: 36W
Case: TO225
Mounting: THT
Kind of package: bulk
Frequency: 3MHz
Current gain: 85...375
Category: NPN THT transistors
Description: Transistor: NPN; bipolar; 45V; 4A; 36W; TO225
Type of transistor: NPN
Polarisation: bipolar
Collector-emitter voltage: 45V
Collector current: 4A
Power dissipation: 36W
Case: TO225
Mounting: THT
Kind of package: bulk
Frequency: 3MHz
Current gain: 85...375
товару немає в наявності
В кошику
од. на суму грн.
| 74AC04MTC |
![]() |
Виробник: ONSEMI
Category: Gates, inverters
Description: IC: digital; NOT; Ch: 6; IN: 1; SMD; TSSOP14; 2÷6VDC; -40÷85°C; tube
Type of integrated circuit: digital
Number of channels: hex; 6
Mounting: SMD
Case: TSSOP14
Operating temperature: -40...85°C
Supply voltage: 2...6V DC
Quiescent current: 20µA
Number of inputs: 1
Kind of package: tube
Family: AC
Kind of gate: NOT
Category: Gates, inverters
Description: IC: digital; NOT; Ch: 6; IN: 1; SMD; TSSOP14; 2÷6VDC; -40÷85°C; tube
Type of integrated circuit: digital
Number of channels: hex; 6
Mounting: SMD
Case: TSSOP14
Operating temperature: -40...85°C
Supply voltage: 2...6V DC
Quiescent current: 20µA
Number of inputs: 1
Kind of package: tube
Family: AC
Kind of gate: NOT
на замовлення 192 шт:
термін постачання 14-30 дні (днів)
| Кількість | Ціна без ПДВ |
|---|---|
| 13+ | 35.22 грн |
| 15+ | 29.02 грн |
| 74AC04MTCX |
![]() |
Виробник: ONSEMI
Category: Gates, inverters
Description: IC: digital; NOT; Ch: 6; IN: 1; SMD; TSSOP14; 2÷6VDC; -40÷85°C; AC
Type of integrated circuit: digital
Kind of gate: NOT
Number of channels: hex; 6
Mounting: SMD
Case: TSSOP14
Family: AC
Number of inputs: 1
Kind of package: reel; tape
Supply voltage: 2...6V DC
Operating temperature: -40...85°C
Category: Gates, inverters
Description: IC: digital; NOT; Ch: 6; IN: 1; SMD; TSSOP14; 2÷6VDC; -40÷85°C; AC
Type of integrated circuit: digital
Kind of gate: NOT
Number of channels: hex; 6
Mounting: SMD
Case: TSSOP14
Family: AC
Number of inputs: 1
Kind of package: reel; tape
Supply voltage: 2...6V DC
Operating temperature: -40...85°C
товару немає в наявності
В кошику
од. на суму грн.
| MUR1620CTRG |
![]() |
Виробник: ONSEMI
Category: THT universal diodes
Description: Diode: rectifying; THT; 200V; 8Ax2; Ifsm: 100A; TO220AB; tube; 85ns
Type of diode: rectifying
Mounting: THT
Max. off-state voltage: 200V
Load current: 8A x2
Semiconductor structure: common anode; double
Case: TO220AB
Kind of package: tube
Reverse recovery time: 85ns
Max. forward impulse current: 100A
Heatsink thickness: 1.15...1.39mm
Max. load current: 16A
Category: THT universal diodes
Description: Diode: rectifying; THT; 200V; 8Ax2; Ifsm: 100A; TO220AB; tube; 85ns
Type of diode: rectifying
Mounting: THT
Max. off-state voltage: 200V
Load current: 8A x2
Semiconductor structure: common anode; double
Case: TO220AB
Kind of package: tube
Reverse recovery time: 85ns
Max. forward impulse current: 100A
Heatsink thickness: 1.15...1.39mm
Max. load current: 16A
на замовлення 70 шт:
термін постачання 14-30 дні (днів)
| Кількість | Ціна без ПДВ |
|---|---|
| 3+ | 159.86 грн |
| 10+ | 90.57 грн |
| 50+ | 87.22 грн |
| MUR1620CTG |
![]() |
Виробник: ONSEMI
Category: THT universal diodes
Description: Diode: rectifying; THT; 200V; 8Ax2; Ifsm: 100A; TO220AB; tube; 35ns
Type of diode: rectifying
Mounting: THT
Max. off-state voltage: 200V
Load current: 8A x2
Semiconductor structure: common cathode; double
Case: TO220AB
Kind of package: tube
Reverse recovery time: 35ns
Max. forward impulse current: 100A
Heatsink thickness: 1.15...1.39mm
Max. load current: 16A
Category: THT universal diodes
Description: Diode: rectifying; THT; 200V; 8Ax2; Ifsm: 100A; TO220AB; tube; 35ns
Type of diode: rectifying
Mounting: THT
Max. off-state voltage: 200V
Load current: 8A x2
Semiconductor structure: common cathode; double
Case: TO220AB
Kind of package: tube
Reverse recovery time: 35ns
Max. forward impulse current: 100A
Heatsink thickness: 1.15...1.39mm
Max. load current: 16A
на замовлення 409 шт:
термін постачання 14-30 дні (днів)
| Кількість | Ціна без ПДВ |
|---|---|
| 4+ | 143.60 грн |
| 5+ | 103.15 грн |
| 10+ | 88.06 грн |
| 50+ | 60.38 грн |
| 100+ | 53.67 грн |
| 74AC04SCX |
![]() |
Виробник: ONSEMI
Category: Gates, inverters
Description: IC: digital; hex,inverter; NOT; Ch: 6; IN: 1; SMD; SOIC14; AC; 2÷6VDC
Type of integrated circuit: digital
Kind of gate: NOT
Number of channels: 6
Mounting: SMD
Case: SOIC14
Family: AC
Number of inputs: 1
Kind of package: reel; tape
Kind of integrated circuit: hex; inverter
Supply voltage: 2...6V DC
Manufacturer series: AC
Operating temperature: -40...85°C
Category: Gates, inverters
Description: IC: digital; hex,inverter; NOT; Ch: 6; IN: 1; SMD; SOIC14; AC; 2÷6VDC
Type of integrated circuit: digital
Kind of gate: NOT
Number of channels: 6
Mounting: SMD
Case: SOIC14
Family: AC
Number of inputs: 1
Kind of package: reel; tape
Kind of integrated circuit: hex; inverter
Supply voltage: 2...6V DC
Manufacturer series: AC
Operating temperature: -40...85°C
товару немає в наявності
Мінімальне замовлення: 2500 шт
В кошику
од. на суму грн.
| MC74AC04DR2G |
![]() |
Виробник: ONSEMI
Category: Gates, inverters
Description: IC: digital; NOT; Ch: 6; IN: 1; CMOS; SMD; SO14; 2÷6VDC; -40÷85°C; 40uA
Type of integrated circuit: digital
Kind of gate: NOT
Number of channels: hex; 6
Mounting: SMD
Case: SO14
Family: AC
Number of inputs: 1
Kind of package: reel; tape
Supply voltage: 2...6V DC
Operating temperature: -40...85°C
Technology: CMOS
Quiescent current: 40µA
Category: Gates, inverters
Description: IC: digital; NOT; Ch: 6; IN: 1; CMOS; SMD; SO14; 2÷6VDC; -40÷85°C; 40uA
Type of integrated circuit: digital
Kind of gate: NOT
Number of channels: hex; 6
Mounting: SMD
Case: SO14
Family: AC
Number of inputs: 1
Kind of package: reel; tape
Supply voltage: 2...6V DC
Operating temperature: -40...85°C
Technology: CMOS
Quiescent current: 40µA
на замовлення 2072 шт:
термін постачання 14-30 дні (днів)
| Кількість | Ціна без ПДВ |
|---|---|
| 18+ | 25.29 грн |
| 25+ | 17.28 грн |
| 28+ | 15.01 грн |
| 50+ | 13.50 грн |
| 100+ | 12.33 грн |
| 250+ | 10.99 грн |
| 500+ | 10.57 грн |
| MC74AC04DTR2G |
![]() |
Виробник: ONSEMI
Category: Gates, inverters
Description: IC: digital; hex,inverter; NOT; Ch: 6; IN: 1; CMOS; SMD; TSSOP14; AC
Type of integrated circuit: digital
Kind of gate: NOT
Number of channels: 6
Mounting: SMD
Case: TSSOP14
Family: AC
Number of inputs: 1
Kind of package: reel; tape
Kind of integrated circuit: hex; inverter
Supply voltage: 2...6V DC
Manufacturer series: AC
Operating temperature: -40...85°C
Technology: CMOS
Category: Gates, inverters
Description: IC: digital; hex,inverter; NOT; Ch: 6; IN: 1; CMOS; SMD; TSSOP14; AC
Type of integrated circuit: digital
Kind of gate: NOT
Number of channels: 6
Mounting: SMD
Case: TSSOP14
Family: AC
Number of inputs: 1
Kind of package: reel; tape
Kind of integrated circuit: hex; inverter
Supply voltage: 2...6V DC
Manufacturer series: AC
Operating temperature: -40...85°C
Technology: CMOS
товару немає в наявності
Мінімальне замовлення: 2500 шт
В кошику
од. на суму грн.
| 1N3595TR |
![]() |
Виробник: ONSEMI
Category: THT universal diodes
Description: Diode: rectifying; THT; 150V; 200mA; Ifsm: 4A; DO35; Ufmax: 1V; Ir: 3uA
Type of diode: rectifying
Mounting: THT
Max. off-state voltage: 150V
Load current: 0.2A
Semiconductor structure: single diode
Features of semiconductor devices: small signal
Capacitance: 8pF
Max. forward impulse current: 4A
Case: DO35
Max. forward voltage: 1V
Leakage current: 3µA
Power dissipation: 0.5W
Reverse recovery time: 3µs
Category: THT universal diodes
Description: Diode: rectifying; THT; 150V; 200mA; Ifsm: 4A; DO35; Ufmax: 1V; Ir: 3uA
Type of diode: rectifying
Mounting: THT
Max. off-state voltage: 150V
Load current: 0.2A
Semiconductor structure: single diode
Features of semiconductor devices: small signal
Capacitance: 8pF
Max. forward impulse current: 4A
Case: DO35
Max. forward voltage: 1V
Leakage current: 3µA
Power dissipation: 0.5W
Reverse recovery time: 3µs
на замовлення 3001 шт:
термін постачання 14-30 дні (днів)
| Кількість | Ціна без ПДВ |
|---|---|
| 56+ | 8.13 грн |
| 79+ | 5.37 грн |
| 117+ | 3.61 грн |
| 500+ | 2.82 грн |
| 1000+ | 2.56 грн |
| 1N3595 |
![]() |
Виробник: ONSEMI
Category: THT universal diodes
Description: Diode: switching; THT; 150V; 200mA; Ifsm: 200mA; DO35; Ufmax: 1V; 3us
Type of diode: switching
Mounting: THT
Max. off-state voltage: 150V
Load current: 0.2A
Semiconductor structure: single diode
Features of semiconductor devices: small signal
Max. forward impulse current: 0.2A
Case: DO35
Max. forward voltage: 1V
Reverse recovery time: 3µs
Max. load current: 0.2A
Category: THT universal diodes
Description: Diode: switching; THT; 150V; 200mA; Ifsm: 200mA; DO35; Ufmax: 1V; 3us
Type of diode: switching
Mounting: THT
Max. off-state voltage: 150V
Load current: 0.2A
Semiconductor structure: single diode
Features of semiconductor devices: small signal
Max. forward impulse current: 0.2A
Case: DO35
Max. forward voltage: 1V
Reverse recovery time: 3µs
Max. load current: 0.2A
товару немає в наявності
Мінімальне замовлення: 5000 шт
В кошику
од. на суму грн.
| KA5M0365RYDTU |
![]() |
Виробник: ONSEMI
Category: Voltage regulators - PWM circuits
Description: IC: PMIC; PWM controller; 2.4A; 650V; 67kHz; Ch: 1; TO220F-4FL; 4.5Ω
Type of integrated circuit: PMIC
Kind of integrated circuit: PWM controller
Output current: 2.4A
Output voltage: 650V
Frequency: 67kHz
Number of channels: 1
Case: TO220F-4FL
Mounting: THT
Operating temperature: -40...85°C
Topology: flyback; forward
On-state resistance: 4.5Ω
Duty cycle factor: 72...82%
Kind of package: tube
Power: 75W
Operating voltage: 9...27V DC
Category: Voltage regulators - PWM circuits
Description: IC: PMIC; PWM controller; 2.4A; 650V; 67kHz; Ch: 1; TO220F-4FL; 4.5Ω
Type of integrated circuit: PMIC
Kind of integrated circuit: PWM controller
Output current: 2.4A
Output voltage: 650V
Frequency: 67kHz
Number of channels: 1
Case: TO220F-4FL
Mounting: THT
Operating temperature: -40...85°C
Topology: flyback; forward
On-state resistance: 4.5Ω
Duty cycle factor: 72...82%
Kind of package: tube
Power: 75W
Operating voltage: 9...27V DC
товару немає в наявності
Мінімальне замовлення: 1000 шт
В кошику
од. на суму грн.
| NCP4328ASNT1G |
![]() |
Виробник: ONSEMI
Category: Voltage regulators - DC/DC circuits
Description: IC: PMIC; TSOP5; 2.5÷40VDC
Mounting: SMD
Type of integrated circuit: PMIC
Operating temperature: -40...125°C
Case: TSOP5
Number of channels: 1
Operating voltage: 2.5...40V DC
Category: Voltage regulators - DC/DC circuits
Description: IC: PMIC; TSOP5; 2.5÷40VDC
Mounting: SMD
Type of integrated circuit: PMIC
Operating temperature: -40...125°C
Case: TSOP5
Number of channels: 1
Operating voltage: 2.5...40V DC
товару немає в наявності
Мінімальне замовлення: 3000 шт
В кошику
од. на суму грн.
| NCP4328BSNT1G |
![]() |
Виробник: ONSEMI
Category: Voltage regulators - DC/DC circuits
Description: IC: PMIC; TSOP6; 2.5÷40VDC
Mounting: SMD
Type of integrated circuit: PMIC
Operating temperature: -40...125°C
Case: TSOP6
Number of channels: 1
Frequency: 1kHz
Operating voltage: 2.5...40V DC
Category: Voltage regulators - DC/DC circuits
Description: IC: PMIC; TSOP6; 2.5÷40VDC
Mounting: SMD
Type of integrated circuit: PMIC
Operating temperature: -40...125°C
Case: TSOP6
Number of channels: 1
Frequency: 1kHz
Operating voltage: 2.5...40V DC
товару немає в наявності
Мінімальне замовлення: 3000 шт
В кошику
од. на суму грн.
| MC74AC74DR2G |
![]() |
Виробник: ONSEMI
Category: Flip-Flops
Description: IC: digital; D flip-flop; Ch: 2; TTL; SMD; SO14; 40uA; reel,tape
Type of integrated circuit: digital
Kind of integrated circuit: D flip-flop
Number of channels: 2
Mounting: SMD
Case: SO14
Operating temperature: -40...85°C
Quiescent current: 40µA
Supply voltage: 2...6V DC
Technology: TTL
Trigger: positive-edge-triggered
Kind of package: reel; tape
Category: Flip-Flops
Description: IC: digital; D flip-flop; Ch: 2; TTL; SMD; SO14; 40uA; reel,tape
Type of integrated circuit: digital
Kind of integrated circuit: D flip-flop
Number of channels: 2
Mounting: SMD
Case: SO14
Operating temperature: -40...85°C
Quiescent current: 40µA
Supply voltage: 2...6V DC
Technology: TTL
Trigger: positive-edge-triggered
Kind of package: reel; tape
товару немає в наявності
В кошику
од. на суму грн.
| MC74AC74DTR2G |
![]() |
Виробник: ONSEMI
Category: Flip-Flops
Description: IC: digital; D flip-flop; Ch: 2; CMOS; SMD; TSSOP14; 40uA; reel,tape
Type of integrated circuit: digital
Kind of integrated circuit: D flip-flop
Number of channels: 2
Mounting: SMD
Case: TSSOP14
Operating temperature: -40...85°C
Quiescent current: 40µA
Supply voltage: 2...6V DC
Technology: CMOS
Trigger: positive-edge-triggered
Kind of package: reel; tape
Category: Flip-Flops
Description: IC: digital; D flip-flop; Ch: 2; CMOS; SMD; TSSOP14; 40uA; reel,tape
Type of integrated circuit: digital
Kind of integrated circuit: D flip-flop
Number of channels: 2
Mounting: SMD
Case: TSSOP14
Operating temperature: -40...85°C
Quiescent current: 40µA
Supply voltage: 2...6V DC
Technology: CMOS
Trigger: positive-edge-triggered
Kind of package: reel; tape
товару немає в наявності
Мінімальне замовлення: 5000 шт
В кошику
од. на суму грн.
| MC34072ADR2G |
![]() |
Виробник: ONSEMI
Category: SMD operational amplifiers
Description: IC: operational amplifier; 4.5MHz; Ch: 2; ±1.5÷22VDC,3÷44VDC; SO8
Type of integrated circuit: operational amplifier
Bandwidth: 4.5MHz
Number of channels: dual; 2
Mounting: SMT
Voltage supply range: ± 1.5...22V DC; 3...44V DC
Case: SO8
Operating temperature: 0...70°C
Slew rate: 13V/μs
Input offset voltage: 7mV
Kind of package: reel; tape
Input bias current: 0.7µA
Input offset current: 300nA
Category: SMD operational amplifiers
Description: IC: operational amplifier; 4.5MHz; Ch: 2; ±1.5÷22VDC,3÷44VDC; SO8
Type of integrated circuit: operational amplifier
Bandwidth: 4.5MHz
Number of channels: dual; 2
Mounting: SMT
Voltage supply range: ± 1.5...22V DC; 3...44V DC
Case: SO8
Operating temperature: 0...70°C
Slew rate: 13V/μs
Input offset voltage: 7mV
Kind of package: reel; tape
Input bias current: 0.7µA
Input offset current: 300nA
товару немає в наявності
В кошику
од. на суму грн.
| MC34072AMTTBG |
![]() |
Виробник: ONSEMI
Category: SMD operational amplifiers
Description: IC: operational amplifier; 4.5MHz; Ch: 2; ±1.5÷22VDC,3÷44VDC; 7mV
Type of integrated circuit: operational amplifier
Bandwidth: 4.5MHz
Number of channels: dual; 2
Mounting: SMT
Voltage supply range: ± 1.5...22V DC; 3...44V DC
Case: WQFN10
Operating temperature: 0...70°C
Slew rate: 13V/μs
Input offset voltage: 7mV
Kind of package: reel; tape
Input bias current: 0.7µA
Input offset current: 300nA
Category: SMD operational amplifiers
Description: IC: operational amplifier; 4.5MHz; Ch: 2; ±1.5÷22VDC,3÷44VDC; 7mV
Type of integrated circuit: operational amplifier
Bandwidth: 4.5MHz
Number of channels: dual; 2
Mounting: SMT
Voltage supply range: ± 1.5...22V DC; 3...44V DC
Case: WQFN10
Operating temperature: 0...70°C
Slew rate: 13V/μs
Input offset voltage: 7mV
Kind of package: reel; tape
Input bias current: 0.7µA
Input offset current: 300nA
товару немає в наявності
В кошику
од. на суму грн.
| MC34072VDR2G |
![]() |
Виробник: ONSEMI
Category: SMD operational amplifiers
Description: IC: operational amplifier; 4.5MHz; Ch: 2; ±1.5÷22VDC,3÷44VDC; SO8
Type of integrated circuit: operational amplifier
Bandwidth: 4.5MHz
Number of channels: dual; 2
Mounting: SMT
Voltage supply range: ± 1.5...22V DC; 3...44V DC
Case: SO8
Operating temperature: -40...125°C
Slew rate: 13V/μs
Input offset voltage: 7mV
Kind of package: reel; tape
Input bias current: 0.7µA
Input offset current: 300nA
Category: SMD operational amplifiers
Description: IC: operational amplifier; 4.5MHz; Ch: 2; ±1.5÷22VDC,3÷44VDC; SO8
Type of integrated circuit: operational amplifier
Bandwidth: 4.5MHz
Number of channels: dual; 2
Mounting: SMT
Voltage supply range: ± 1.5...22V DC; 3...44V DC
Case: SO8
Operating temperature: -40...125°C
Slew rate: 13V/μs
Input offset voltage: 7mV
Kind of package: reel; tape
Input bias current: 0.7µA
Input offset current: 300nA
товару немає в наявності
В кошику
од. на суму грн.
| 2N6520TA |
![]() |
Виробник: ONSEMI
Category: PNP THT transistors
Description: Transistor: PNP; bipolar; 350V; 0.5A; 0.625W; TO92 Formed
Kind of package: Ammo Pack
Mounting: THT
Collector-emitter voltage: 350V
Power dissipation: 0.625W
Polarisation: bipolar
Type of transistor: PNP
Current gain: 30...200
Case: TO92 Formed
Frequency: 40...200MHz
Collector current: 0.5A
Category: PNP THT transistors
Description: Transistor: PNP; bipolar; 350V; 0.5A; 0.625W; TO92 Formed
Kind of package: Ammo Pack
Mounting: THT
Collector-emitter voltage: 350V
Power dissipation: 0.625W
Polarisation: bipolar
Type of transistor: PNP
Current gain: 30...200
Case: TO92 Formed
Frequency: 40...200MHz
Collector current: 0.5A
на замовлення 432 шт:
термін постачання 14-30 дні (днів)
| Кількість | Ціна без ПДВ |
|---|---|
| 23+ | 19.87 грн |
| 38+ | 11.24 грн |
| 100+ | 7.09 грн |
| CAT24C02TDI-GT3A |
![]() |
Виробник: ONSEMI
Category: Serial EEPROM memories - integ. circ.
Description: IC: EEPROM memory; 2kbEEPROM; I2C; 256x8bit; 1.7÷5.5V; SOT23-5
Type of integrated circuit: EEPROM memory
Kind of memory: EEPROM
Memory: 2kb EEPROM
Interface: I2C
Memory organisation: 256x8bit
Operating voltage: 1.7...5.5V
Mounting: SMD
Case: SOT23-5
Category: Serial EEPROM memories - integ. circ.
Description: IC: EEPROM memory; 2kbEEPROM; I2C; 256x8bit; 1.7÷5.5V; SOT23-5
Type of integrated circuit: EEPROM memory
Kind of memory: EEPROM
Memory: 2kb EEPROM
Interface: I2C
Memory organisation: 256x8bit
Operating voltage: 1.7...5.5V
Mounting: SMD
Case: SOT23-5
товару немає в наявності
В кошику
од. на суму грн.
| NCP3063BDR2G |
![]() |
Виробник: ONSEMI
Category: Voltage regulators - DC/DC circuits
Description: PMIC; DC/DC converter; Uin: 3÷40VDC; Uout: 1.25÷40VDC; 1.5A; SO8
Type of integrated circuit: PMIC
Kind of integrated circuit: DC/DC converter
Input voltage: 3...40V DC
Output voltage: 1.25...40V DC
Output current: 1.5A
Case: SO8
Mounting: SMD
Frequency: 110...190kHz
Topology: boost; buck; buck-boost
Number of channels: 1
Operating temperature: -40...125°C
Kind of package: reel; tape
Operating voltage: 5...40V DC
Category: Voltage regulators - DC/DC circuits
Description: PMIC; DC/DC converter; Uin: 3÷40VDC; Uout: 1.25÷40VDC; 1.5A; SO8
Type of integrated circuit: PMIC
Kind of integrated circuit: DC/DC converter
Input voltage: 3...40V DC
Output voltage: 1.25...40V DC
Output current: 1.5A
Case: SO8
Mounting: SMD
Frequency: 110...190kHz
Topology: boost; buck; buck-boost
Number of channels: 1
Operating temperature: -40...125°C
Kind of package: reel; tape
Operating voltage: 5...40V DC
на замовлення 368 шт:
термін постачання 14-30 дні (днів)
| Кількість | Ціна без ПДВ |
|---|---|
| 6+ | 86.70 грн |
| 10+ | 61.22 грн |
| 25+ | 53.67 грн |
| 50+ | 50.32 грн |
| MBRB2545CTT4G |
![]() |
Виробник: ONSEMI
Category: SMD Schottky diodes
Description: Diode: Schottky rectifying; D2PAK; SMD; 45V; 15Ax2; reel,tape
Mounting: SMD
Max. forward voltage: 0.65V
Max. off-state voltage: 45V
Load current: 15A x2
Max. load current: 30A
Kind of package: reel; tape
Semiconductor structure: common cathode; double
Case: D2PAK
Type of diode: Schottky rectifying
Category: SMD Schottky diodes
Description: Diode: Schottky rectifying; D2PAK; SMD; 45V; 15Ax2; reel,tape
Mounting: SMD
Max. forward voltage: 0.65V
Max. off-state voltage: 45V
Load current: 15A x2
Max. load current: 30A
Kind of package: reel; tape
Semiconductor structure: common cathode; double
Case: D2PAK
Type of diode: Schottky rectifying
на замовлення 123 шт:
термін постачання 14-30 дні (днів)
| Кількість | Ціна без ПДВ |
|---|---|
| 4+ | 115.73 грн |
| 10+ | 72.12 грн |
| MUR1540G |
![]() |
Виробник: ONSEMI
Category: THT universal diodes
Description: Diode: rectifying; THT; 400V; 15A; Ifsm: 200A; TO220-2; tube; 60ns
Type of diode: rectifying
Mounting: THT
Max. off-state voltage: 0.4kV
Load current: 15A
Semiconductor structure: single diode
Case: TO220-2
Max. forward impulse current: 200A
Kind of package: tube
Max. load current: 30A
Reverse recovery time: 60ns
Heatsink thickness: 1.14...1.39mm
Category: THT universal diodes
Description: Diode: rectifying; THT; 400V; 15A; Ifsm: 200A; TO220-2; tube; 60ns
Type of diode: rectifying
Mounting: THT
Max. off-state voltage: 0.4kV
Load current: 15A
Semiconductor structure: single diode
Case: TO220-2
Max. forward impulse current: 200A
Kind of package: tube
Max. load current: 30A
Reverse recovery time: 60ns
Heatsink thickness: 1.14...1.39mm
на замовлення 103 шт:
термін постачання 14-30 дні (днів)
| Кількість | Ціна без ПДВ |
|---|---|
| 6+ | 79.48 грн |
| 10+ | 61.22 грн |
| 50+ | 59.54 грн |
| MBRS1540T3G |
![]() |
Виробник: ONSEMI
Category: SMD Schottky diodes
Description: Diode: Schottky rectifying; SMB; SMD; 40V; 1.5A; reel,tape
Type of diode: Schottky rectifying
Case: SMB
Mounting: SMD
Max. off-state voltage: 40V
Load current: 1.5A
Semiconductor structure: single diode
Max. forward voltage: 0.54V
Max. load current: 3A
Kind of package: reel; tape
Category: SMD Schottky diodes
Description: Diode: Schottky rectifying; SMB; SMD; 40V; 1.5A; reel,tape
Type of diode: Schottky rectifying
Case: SMB
Mounting: SMD
Max. off-state voltage: 40V
Load current: 1.5A
Semiconductor structure: single diode
Max. forward voltage: 0.54V
Max. load current: 3A
Kind of package: reel; tape
на замовлення 520 шт:
термін постачання 14-30 дні (днів)
| Кількість | Ціна без ПДВ |
|---|---|
| 10+ | 48.77 грн |
| 18+ | 23.90 грн |
| 25+ | 20.30 грн |
| 50+ | 18.28 грн |
| 100+ | 16.44 грн |
| 250+ | 14.68 грн |
| 500+ | 13.92 грн |
| FQPF27P06 |
![]() |
Виробник: ONSEMI
Category: THT P channel transistors
Description: Transistor: P-MOSFET; unipolar; -60V; -12A; 47W; TO220FP
Type of transistor: P-MOSFET
Technology: QFET®
Polarisation: unipolar
Drain-source voltage: -60V
Drain current: -12A
Power dissipation: 47W
Case: TO220FP
Gate-source voltage: ±25V
On-state resistance: 70mΩ
Mounting: THT
Gate charge: 43nC
Kind of package: tube
Kind of channel: enhancement
Category: THT P channel transistors
Description: Transistor: P-MOSFET; unipolar; -60V; -12A; 47W; TO220FP
Type of transistor: P-MOSFET
Technology: QFET®
Polarisation: unipolar
Drain-source voltage: -60V
Drain current: -12A
Power dissipation: 47W
Case: TO220FP
Gate-source voltage: ±25V
On-state resistance: 70mΩ
Mounting: THT
Gate charge: 43nC
Kind of package: tube
Kind of channel: enhancement
товару немає в наявності
В кошику
од. на суму грн.
| FQB27P06TM |
![]() |
Виробник: ONSEMI
Category: SMD P channel transistors
Description: Transistor: P-MOSFET; unipolar; -60V; -19.1A; 120W; D2PAK
Type of transistor: P-MOSFET
Technology: QFET®
Polarisation: unipolar
Drain-source voltage: -60V
Drain current: -19.1A
Power dissipation: 120W
Case: D2PAK
Gate-source voltage: ±25V
On-state resistance: 70mΩ
Mounting: SMD
Gate charge: 43nC
Kind of package: reel; tape
Kind of channel: enhancement
Category: SMD P channel transistors
Description: Transistor: P-MOSFET; unipolar; -60V; -19.1A; 120W; D2PAK
Type of transistor: P-MOSFET
Technology: QFET®
Polarisation: unipolar
Drain-source voltage: -60V
Drain current: -19.1A
Power dissipation: 120W
Case: D2PAK
Gate-source voltage: ±25V
On-state resistance: 70mΩ
Mounting: SMD
Gate charge: 43nC
Kind of package: reel; tape
Kind of channel: enhancement
на замовлення 545 шт:
термін постачання 14-30 дні (днів)
| Кількість | Ціна без ПДВ |
|---|---|
| 3+ | 190.57 грн |
| 5+ | 141.73 грн |
| 10+ | 125.80 грн |
| 25+ | 106.51 грн |
| 50+ | 93.93 грн |
| 100+ | 83.86 грн |
| MJ15001G |
![]() |
Виробник: ONSEMI
Category: NPN THT transistors
Description: Transistor: NPN; bipolar; 140V; 15A; 200W; TO3
Type of transistor: NPN
Polarisation: bipolar
Collector-emitter voltage: 140V
Collector current: 15A
Power dissipation: 200W
Case: TO3
Current gain: 25...150
Mounting: THT
Kind of package: in-tray
Frequency: 2MHz
Category: NPN THT transistors
Description: Transistor: NPN; bipolar; 140V; 15A; 200W; TO3
Type of transistor: NPN
Polarisation: bipolar
Collector-emitter voltage: 140V
Collector current: 15A
Power dissipation: 200W
Case: TO3
Current gain: 25...150
Mounting: THT
Kind of package: in-tray
Frequency: 2MHz
товару немає в наявності
В кошику
од. на суму грн.
| MC14512BDR2G |
![]() |
Виробник: ONSEMI
Category: Decoders, multiplexers, switches
Description: IC: digital; data selector; Ch: 8; IN: 8; TTL; SMD; SO16; HEF4000B
Supply voltage: 3...18V DC
Type of integrated circuit: digital
Operating temperature: -40...85°C
Technology: TTL
Number of inputs: 8
Kind of package: reel; tape
Case: SO16
Family: HEF4000B
Kind of integrated circuit: data selector
Number of channels: 8
Mounting: SMD
Category: Decoders, multiplexers, switches
Description: IC: digital; data selector; Ch: 8; IN: 8; TTL; SMD; SO16; HEF4000B
Supply voltage: 3...18V DC
Type of integrated circuit: digital
Operating temperature: -40...85°C
Technology: TTL
Number of inputs: 8
Kind of package: reel; tape
Case: SO16
Family: HEF4000B
Kind of integrated circuit: data selector
Number of channels: 8
Mounting: SMD
на замовлення 2486 шт:
термін постачання 14-30 дні (днів)
| Кількість | Ціна без ПДВ |
|---|---|
| 13+ | 37.03 грн |
| 18+ | 24.32 грн |
| 25+ | 21.80 грн |
| 100+ | 19.04 грн |
| 250+ | 18.37 грн |
| FCPF16N60 |
![]() |
Виробник: ONSEMI
Category: THT N channel transistors
Description: Transistor: N-MOSFET; SJ-MOSFET; unipolar; 600V; 10.1A; Idm: 48A
Type of transistor: N-MOSFET
Technology: SJ-MOSFET
Polarisation: unipolar
Drain-source voltage: 600V
Drain current: 10.1A
Power dissipation: 37.9W
Case: TO220FP
Gate-source voltage: ±30V
On-state resistance: 0.26Ω
Mounting: THT
Kind of package: tube
Kind of channel: enhancement
Pulsed drain current: 48A
Gate charge: 70nC
Category: THT N channel transistors
Description: Transistor: N-MOSFET; SJ-MOSFET; unipolar; 600V; 10.1A; Idm: 48A
Type of transistor: N-MOSFET
Technology: SJ-MOSFET
Polarisation: unipolar
Drain-source voltage: 600V
Drain current: 10.1A
Power dissipation: 37.9W
Case: TO220FP
Gate-source voltage: ±30V
On-state resistance: 0.26Ω
Mounting: THT
Kind of package: tube
Kind of channel: enhancement
Pulsed drain current: 48A
Gate charge: 70nC
товару немає в наявності
В кошику
од. на суму грн.
| CAT24C256YI-GT3 |
![]() |
Виробник: ONSEMI
Category: Serial EEPROM memories - integ. circ.
Description: IC: EEPROM memory; 256kbEEPROM; I2C; 32kx8bit; 1.8÷5.5V; TSSOP8
Type of integrated circuit: EEPROM memory
Interface: I2C
Case: TSSOP8
Mounting: SMD
Kind of memory: EEPROM
Memory: 256kb EEPROM
Memory organisation: 32kx8bit
Operating voltage: 1.8...5.5V
Category: Serial EEPROM memories - integ. circ.
Description: IC: EEPROM memory; 256kbEEPROM; I2C; 32kx8bit; 1.8÷5.5V; TSSOP8
Type of integrated circuit: EEPROM memory
Interface: I2C
Case: TSSOP8
Mounting: SMD
Kind of memory: EEPROM
Memory: 256kb EEPROM
Memory organisation: 32kx8bit
Operating voltage: 1.8...5.5V
на замовлення 36 шт:
термін постачання 14-30 дні (днів)
| Кількість | Ціна без ПДВ |
|---|---|
| 12+ | 38.84 грн |
| NV24C256MUW3VTBG |
![]() |
Виробник: ONSEMI
Category: Serial EEPROM memories - integ. circ.
Description: IC: EEPROM memory; 256kbEEPROM; I2C; 32kx8bit; 2.5÷5.5V; 1MHz
Type of integrated circuit: EEPROM memory
Kind of memory: EEPROM
Interface: I2C
Memory organisation: 32kx8bit
Mounting: SMD
Case: uDFN8
Kind of interface: serial
Operating temperature: -40...125°C
Access time: 40ns
Operating voltage: 2.5...5.5V
Clock frequency: 1MHz
Memory: 256kb EEPROM
Kind of package: reel; tape
Category: Serial EEPROM memories - integ. circ.
Description: IC: EEPROM memory; 256kbEEPROM; I2C; 32kx8bit; 2.5÷5.5V; 1MHz
Type of integrated circuit: EEPROM memory
Kind of memory: EEPROM
Interface: I2C
Memory organisation: 32kx8bit
Mounting: SMD
Case: uDFN8
Kind of interface: serial
Operating temperature: -40...125°C
Access time: 40ns
Operating voltage: 2.5...5.5V
Clock frequency: 1MHz
Memory: 256kb EEPROM
Kind of package: reel; tape
товару немає в наявності
Мінімальне замовлення: 3000 шт
В кошику
од. на суму грн.
| CAV24C256WE-GT3 |
![]() |
Виробник: ONSEMI
Category: Serial EEPROM memories - integ. circ.
Description: IC: EEPROM memory; 256kbEEPROM; I2C; 32kx8bit; 2.5÷5.5V; 1MHz
Type of integrated circuit: EEPROM memory
Kind of memory: EEPROM
Interface: I2C
Memory organisation: 32kx8bit
Mounting: SMD
Case: SOIC8
Kind of interface: serial
Operating temperature: -40...125°C
Access time: 400ns
Operating voltage: 2.5...5.5V
Clock frequency: 1MHz
Memory: 256kb EEPROM
Kind of package: reel; tape
Category: Serial EEPROM memories - integ. circ.
Description: IC: EEPROM memory; 256kbEEPROM; I2C; 32kx8bit; 2.5÷5.5V; 1MHz
Type of integrated circuit: EEPROM memory
Kind of memory: EEPROM
Interface: I2C
Memory organisation: 32kx8bit
Mounting: SMD
Case: SOIC8
Kind of interface: serial
Operating temperature: -40...125°C
Access time: 400ns
Operating voltage: 2.5...5.5V
Clock frequency: 1MHz
Memory: 256kb EEPROM
Kind of package: reel; tape
товару немає в наявності
В кошику
од. на суму грн.
| CAV24C256YE-GT3 |
![]() |
Виробник: ONSEMI
Category: Serial EEPROM memories - integ. circ.
Description: IC: EEPROM memory; 256kbEEPROM; I2C; 32kx8bit; 2.5÷5.5V; 1MHz
Type of integrated circuit: EEPROM memory
Kind of memory: EEPROM
Interface: I2C
Memory organisation: 32kx8bit
Mounting: SMD
Case: TSSOP8
Kind of interface: serial
Operating temperature: -40...125°C
Access time: 400ns
Operating voltage: 2.5...5.5V
Clock frequency: 1MHz
Memory: 256kb EEPROM
Kind of package: reel; tape
Category: Serial EEPROM memories - integ. circ.
Description: IC: EEPROM memory; 256kbEEPROM; I2C; 32kx8bit; 2.5÷5.5V; 1MHz
Type of integrated circuit: EEPROM memory
Kind of memory: EEPROM
Interface: I2C
Memory organisation: 32kx8bit
Mounting: SMD
Case: TSSOP8
Kind of interface: serial
Operating temperature: -40...125°C
Access time: 400ns
Operating voltage: 2.5...5.5V
Clock frequency: 1MHz
Memory: 256kb EEPROM
Kind of package: reel; tape
товару немає в наявності
Мінімальне замовлення: 3000 шт
В кошику
од. на суму грн.
| NCP1246BLD065R2G |
![]() |
Виробник: ONSEMI
Category: Voltage regulators - DC/DC circuits
Description: IC: PMIC; AC/DC switcher,PWM controller; SO7; flyback
Type of integrated circuit: PMIC
Kind of integrated circuit: AC/DC switcher; PWM controller
Output current: 500...800mA
Frequency: 58...72kHz
Mounting: SMD
Case: SO7
Topology: flyback
Number of channels: 1
Operating temperature: -40...125°C
Operating voltage: 8.9...26.5V DC
Category: Voltage regulators - DC/DC circuits
Description: IC: PMIC; AC/DC switcher,PWM controller; SO7; flyback
Type of integrated circuit: PMIC
Kind of integrated circuit: AC/DC switcher; PWM controller
Output current: 500...800mA
Frequency: 58...72kHz
Mounting: SMD
Case: SO7
Topology: flyback
Number of channels: 1
Operating temperature: -40...125°C
Operating voltage: 8.9...26.5V DC
товару немає в наявності
Мінімальне замовлення: 2500 шт
В кошику
од. на суму грн.
| MC74HC165ADR2G-Q |
![]() |
Виробник: ONSEMI
Category: Shift registers
Description: IC: digital; shift register,parallel in; Ch: 1; SMD; SOIC16; HC
Type of integrated circuit: digital
Kind of integrated circuit: parallel in; shift register
Mounting: SMD
Case: SOIC16
Family: HC
Supply voltage: 2...6V
Trigger: positive-edge-triggered
Number of inputs: 9
Number of outputs: 1
Number of channels: 1
Delay time: 225ns
Kind of output: complementary; push-pull
Operating temperature: -55...125°C
Category: Shift registers
Description: IC: digital; shift register,parallel in; Ch: 1; SMD; SOIC16; HC
Type of integrated circuit: digital
Kind of integrated circuit: parallel in; shift register
Mounting: SMD
Case: SOIC16
Family: HC
Supply voltage: 2...6V
Trigger: positive-edge-triggered
Number of inputs: 9
Number of outputs: 1
Number of channels: 1
Delay time: 225ns
Kind of output: complementary; push-pull
Operating temperature: -55...125°C
товару немає в наявності
В кошику
од. на суму грн.
| MC74HC165ADTR2G-Q |
![]() |
Виробник: ONSEMI
Category: Shift registers
Description: IC: digital; shift register,parallel in; Ch: 1; SMD; TSSOP16; HC
Type of integrated circuit: digital
Kind of integrated circuit: parallel in; shift register
Mounting: SMD
Case: TSSOP16
Family: HC
Supply voltage: 2...6V
Trigger: positive-edge-triggered
Number of inputs: 9
Number of outputs: 1
Number of channels: 1
Delay time: 225ns
Kind of output: complementary; push-pull
Operating temperature: -55...125°C
Category: Shift registers
Description: IC: digital; shift register,parallel in; Ch: 1; SMD; TSSOP16; HC
Type of integrated circuit: digital
Kind of integrated circuit: parallel in; shift register
Mounting: SMD
Case: TSSOP16
Family: HC
Supply voltage: 2...6V
Trigger: positive-edge-triggered
Number of inputs: 9
Number of outputs: 1
Number of channels: 1
Delay time: 225ns
Kind of output: complementary; push-pull
Operating temperature: -55...125°C
товару немає в наявності
В кошику
од. на суму грн.
| MC74HC165AMN2TWG |
![]() |
Виробник: ONSEMI
Category: Shift registers
Description: IC: digital; shift register,parallel in; Ch: 1; SMD; QFN16; HC; IN: 9
Type of integrated circuit: digital
Kind of integrated circuit: parallel in; shift register
Mounting: SMD
Case: QFN16
Family: HC
Supply voltage: 2...6V
Trigger: positive-edge-triggered
Number of inputs: 9
Number of outputs: 1
Number of channels: 1
Kind of output: complementary; push-pull
Operating temperature: -55...125°C
Category: Shift registers
Description: IC: digital; shift register,parallel in; Ch: 1; SMD; QFN16; HC; IN: 9
Type of integrated circuit: digital
Kind of integrated circuit: parallel in; shift register
Mounting: SMD
Case: QFN16
Family: HC
Supply voltage: 2...6V
Trigger: positive-edge-triggered
Number of inputs: 9
Number of outputs: 1
Number of channels: 1
Kind of output: complementary; push-pull
Operating temperature: -55...125°C
товару немає в наявності
В кошику
од. на суму грн.
| MC74HC165AMN2TWG-Q |
![]() |
Виробник: ONSEMI
Category: Shift registers
Description: IC: digital; shift register,parallel in; SMD; QFN16; -55÷125°C
Type of integrated circuit: digital
Kind of integrated circuit: parallel in; shift register
Mounting: SMD
Case: QFN16
Supply voltage: 4.5...5.5V
Number of inputs: 9
Delay time: 225ns
Kind of output: complementary
Operating temperature: -55...125°C
Category: Shift registers
Description: IC: digital; shift register,parallel in; SMD; QFN16; -55÷125°C
Type of integrated circuit: digital
Kind of integrated circuit: parallel in; shift register
Mounting: SMD
Case: QFN16
Supply voltage: 4.5...5.5V
Number of inputs: 9
Delay time: 225ns
Kind of output: complementary
Operating temperature: -55...125°C
товару немає в наявності
В кошику
од. на суму грн.
| FDS3590 |
![]() |
Виробник: ONSEMI
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 80V; 6.5A; 2.5W; SO8
On-state resistance: 86mΩ
Mounting: SMD
Power dissipation: 2.5W
Polarisation: unipolar
Drain current: 6.5A
Kind of channel: enhancement
Drain-source voltage: 80V
Type of transistor: N-MOSFET
Gate-source voltage: ±20V
Kind of package: reel; tape
Case: SO8
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 80V; 6.5A; 2.5W; SO8
On-state resistance: 86mΩ
Mounting: SMD
Power dissipation: 2.5W
Polarisation: unipolar
Drain current: 6.5A
Kind of channel: enhancement
Drain-source voltage: 80V
Type of transistor: N-MOSFET
Gate-source voltage: ±20V
Kind of package: reel; tape
Case: SO8
на замовлення 417 шт:
термін постачання 14-30 дні (днів)
| Кількість | Ціна без ПДВ |
|---|---|
| 5+ | 93.93 грн |
| 10+ | 60.22 грн |
| 25+ | 49.14 грн |
| 100+ | 36.65 грн |
| KSC2383YTA |
![]() |
Виробник: ONSEMI
Category: NPN THT transistors
Description: Transistor: NPN; bipolar; 160V; 1A; 0.9W; TO92 Formed
Type of transistor: NPN
Polarisation: bipolar
Collector-emitter voltage: 160V
Collector current: 1A
Power dissipation: 0.9W
Case: TO92 Formed
Current gain: 160...320
Mounting: THT
Kind of package: Ammo Pack
Frequency: 100MHz
Category: NPN THT transistors
Description: Transistor: NPN; bipolar; 160V; 1A; 0.9W; TO92 Formed
Type of transistor: NPN
Polarisation: bipolar
Collector-emitter voltage: 160V
Collector current: 1A
Power dissipation: 0.9W
Case: TO92 Formed
Current gain: 160...320
Mounting: THT
Kind of package: Ammo Pack
Frequency: 100MHz
на замовлення 2717 шт:
термін постачання 14-30 дні (днів)
| Кількість | Ціна без ПДВ |
|---|---|
| 12+ | 39.74 грн |
| 13+ | 34.05 грн |
| 14+ | 30.95 грн |
| 50+ | 19.29 грн |
| 100+ | 15.01 грн |
| 2000+ | 10.15 грн |
| KSC2383OTA |
![]() |
Виробник: ONSEMI
Category: NPN THT transistors
Description: Transistor: NPN; bipolar; 160V; 1A; 0.9W; TO92 Formed
Type of transistor: NPN
Polarisation: bipolar
Collector-emitter voltage: 160V
Collector current: 1A
Power dissipation: 0.9W
Case: TO92 Formed
Current gain: 100...200
Mounting: THT
Kind of package: Ammo Pack
Frequency: 100MHz
Category: NPN THT transistors
Description: Transistor: NPN; bipolar; 160V; 1A; 0.9W; TO92 Formed
Type of transistor: NPN
Polarisation: bipolar
Collector-emitter voltage: 160V
Collector current: 1A
Power dissipation: 0.9W
Case: TO92 Formed
Current gain: 100...200
Mounting: THT
Kind of package: Ammo Pack
Frequency: 100MHz
на замовлення 1103 шт:
термін постачання 14-30 дні (днів)
| Кількість | Ціна без ПДВ |
|---|---|
| 12+ | 39.74 грн |
| 15+ | 29.35 грн |
| 17+ | 25.33 грн |
| 50+ | 17.36 грн |
| 100+ | 14.76 грн |
| 500+ | 10.90 грн |
| FDMS86101 |
![]() |
Виробник: ONSEMI
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 100V; 60A; 104W; PQFN8
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 100V
Drain current: 60A
Power dissipation: 104W
Case: PQFN8
Gate-source voltage: ±20V
On-state resistance: 14mΩ
Mounting: SMD
Gate charge: 55nC
Kind of package: reel; tape
Kind of channel: enhancement
Technology: PowerTrench®
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 100V; 60A; 104W; PQFN8
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 100V
Drain current: 60A
Power dissipation: 104W
Case: PQFN8
Gate-source voltage: ±20V
On-state resistance: 14mΩ
Mounting: SMD
Gate charge: 55nC
Kind of package: reel; tape
Kind of channel: enhancement
Technology: PowerTrench®
товару немає в наявності
В кошику
од. на суму грн.
| FDMS86101A |
![]() |
Виробник: ONSEMI
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 100V; 60A; Idm: 180A; 104W; Power56
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 100V
Drain current: 60A
Pulsed drain current: 180A
Power dissipation: 104W
Case: Power56
Gate-source voltage: ±20V
On-state resistance: 13.5mΩ
Mounting: SMD
Gate charge: 58nC
Kind of package: reel; tape
Kind of channel: enhancement
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 100V; 60A; Idm: 180A; 104W; Power56
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 100V
Drain current: 60A
Pulsed drain current: 180A
Power dissipation: 104W
Case: Power56
Gate-source voltage: ±20V
On-state resistance: 13.5mΩ
Mounting: SMD
Gate charge: 58nC
Kind of package: reel; tape
Kind of channel: enhancement
товару немає в наявності
В кошику
од. на суму грн.
| FDMS86101DC |
![]() |
Виробник: ONSEMI
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 100V; 60A; 125W; DFN8
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 100V
Drain current: 60A
Power dissipation: 125W
Case: DFN8
Gate-source voltage: ±20V
On-state resistance: 13mΩ
Mounting: SMD
Kind of package: reel; tape
Kind of channel: enhancement
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 100V; 60A; 125W; DFN8
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 100V
Drain current: 60A
Power dissipation: 125W
Case: DFN8
Gate-source voltage: ±20V
On-state resistance: 13mΩ
Mounting: SMD
Kind of package: reel; tape
Kind of channel: enhancement
товару немає в наявності
В кошику
од. на суму грн.
| MC14021BDR2G |
![]() |
Виробник: ONSEMI
Category: Shift registers
Description: IC: digital; Ch: 1; CMOS; SMD; SO16; HEF4000B; -55÷125°C; 3÷18VDC
Type of integrated circuit: digital
Kind of integrated circuit: 8bit; asynchronous; static shift register; synchronous
Number of channels: 1
Technology: CMOS
Mounting: SMD
Case: SO16
Family: HEF4000B
Operating temperature: -55...125°C
Supply voltage: 3...18V DC
Kind of package: reel; tape
Quiescent current: 600µA
Category: Shift registers
Description: IC: digital; Ch: 1; CMOS; SMD; SO16; HEF4000B; -55÷125°C; 3÷18VDC
Type of integrated circuit: digital
Kind of integrated circuit: 8bit; asynchronous; static shift register; synchronous
Number of channels: 1
Technology: CMOS
Mounting: SMD
Case: SO16
Family: HEF4000B
Operating temperature: -55...125°C
Supply voltage: 3...18V DC
Kind of package: reel; tape
Quiescent current: 600µA
на замовлення 9143 шт:
термін постачання 14-30 дні (днів)
| Кількість | Ціна без ПДВ |
|---|---|
| 14+ | 34.32 грн |
| 18+ | 23.31 грн |
| 25+ | 19.54 грн |
| 100+ | 16.27 грн |
| 2500+ | 14.42 грн |
| MC14049BDG |
![]() |
Виробник: ONSEMI
Category: Buffers, transceivers, drivers
Description: IC: digital; buffer,inverting; Ch: 6; CMOS; SMD; SO16; -55÷125°C
Type of integrated circuit: digital
Kind of integrated circuit: buffer; inverting
Number of channels: 6
Technology: CMOS
Mounting: SMD
Case: SO16
Supply voltage: 3...18V DC
Operating temperature: -55...125°C
Kind of package: tube
Category: Buffers, transceivers, drivers
Description: IC: digital; buffer,inverting; Ch: 6; CMOS; SMD; SO16; -55÷125°C
Type of integrated circuit: digital
Kind of integrated circuit: buffer; inverting
Number of channels: 6
Technology: CMOS
Mounting: SMD
Case: SO16
Supply voltage: 3...18V DC
Operating temperature: -55...125°C
Kind of package: tube
на замовлення 193 шт:
термін постачання 14-30 дні (днів)
| Кількість | Ціна без ПДВ |
|---|---|
| 13+ | 36.13 грн |
| 15+ | 28.18 грн |
| 17+ | 25.49 грн |
| 25+ | 22.39 грн |
| 48+ | 20.55 грн |
| 144+ | 18.79 грн |
| MC14082BDG |
![]() |
Виробник: ONSEMI
Category: Gates, inverters
Description: IC: digital; AND; Ch: 2; IN: 4; CMOS; SMD; SO14; 3÷18VDC; -55÷125°C
Delay time: 130ns
Mounting: SMD
Supply voltage: 3...18V DC
Kind of gate: AND
Type of integrated circuit: digital
Operating temperature: -55...125°C
Technology: CMOS
Number of inputs: 4
Kind of package: tube
Case: SO14
Family: HEF4000B
Number of channels: dual; 2
Category: Gates, inverters
Description: IC: digital; AND; Ch: 2; IN: 4; CMOS; SMD; SO14; 3÷18VDC; -55÷125°C
Delay time: 130ns
Mounting: SMD
Supply voltage: 3...18V DC
Kind of gate: AND
Type of integrated circuit: digital
Operating temperature: -55...125°C
Technology: CMOS
Number of inputs: 4
Kind of package: tube
Case: SO14
Family: HEF4000B
Number of channels: dual; 2
на замовлення 293 шт:
термін постачання 14-30 дні (днів)
| Кількість | Ціна без ПДВ |
|---|---|
| 20+ | 22.58 грн |
| 24+ | 17.53 грн |
| 27+ | 15.77 грн |
| 55+ | 14.42 грн |
| 110+ | 13.50 грн |
| 275+ | 12.66 грн |
| MC14025BDG |
![]() |
Виробник: ONSEMI
Category: Gates, inverters
Description: IC: digital; NOR; Ch: 3; IN: 3; CMOS; SMD; SO14; 3÷18VDC; -55÷125°C
Type of integrated circuit: digital
Kind of gate: NOR
Number of channels: triple; 3
Number of inputs: 3
Mounting: SMD
Case: SO14
Family: HEF4000B
Technology: CMOS
Kind of package: tube
Delay time: 130ns
Supply voltage: 3...18V DC
Operating temperature: -55...125°C
Category: Gates, inverters
Description: IC: digital; NOR; Ch: 3; IN: 3; CMOS; SMD; SO14; 3÷18VDC; -55÷125°C
Type of integrated circuit: digital
Kind of gate: NOR
Number of channels: triple; 3
Number of inputs: 3
Mounting: SMD
Case: SO14
Family: HEF4000B
Technology: CMOS
Kind of package: tube
Delay time: 130ns
Supply voltage: 3...18V DC
Operating temperature: -55...125°C
на замовлення 20 шт:
термін постачання 14-30 дні (днів)
| Кількість | Ціна без ПДВ |
|---|---|
| 16+ | 28.90 грн |
| 19+ | 22.73 грн |
| MC14013BDTR2G |
![]() |
Виробник: ONSEMI
Category: Flip-Flops
Description: IC: digital; D flip-flop; Ch: 2; IN: 4; CMOS; SMD; TSSOP14; reel,tape
Type of integrated circuit: digital
Kind of integrated circuit: D flip-flop
Number of channels: 2
Technology: CMOS
Mounting: SMD
Case: TSSOP14
Operating temperature: -55...125°C
Supply voltage: 3...18V DC
Kind of package: reel; tape
Number of inputs: 4
Category: Flip-Flops
Description: IC: digital; D flip-flop; Ch: 2; IN: 4; CMOS; SMD; TSSOP14; reel,tape
Type of integrated circuit: digital
Kind of integrated circuit: D flip-flop
Number of channels: 2
Technology: CMOS
Mounting: SMD
Case: TSSOP14
Operating temperature: -55...125°C
Supply voltage: 3...18V DC
Kind of package: reel; tape
Number of inputs: 4
товару немає в наявності
Мінімальне замовлення: 2500 шт
В кошику
од. на суму грн.
| MC74ACT74DG |
![]() |
Виробник: ONSEMI
Category: Flip-Flops
Description: IC: digital; D flip-flop; Ch: 2; CMOS; ACT; SMD; SO14
Type of integrated circuit: digital
Kind of integrated circuit: D flip-flop
Number of channels: 2
Technology: CMOS
Mounting: SMD
Case: SO14
Operating temperature: -40...85°C
Supply voltage: 4.5...5.5V DC
Manufacturer series: ACT
Trigger: positive-edge-triggered
Category: Flip-Flops
Description: IC: digital; D flip-flop; Ch: 2; CMOS; ACT; SMD; SO14
Type of integrated circuit: digital
Kind of integrated circuit: D flip-flop
Number of channels: 2
Technology: CMOS
Mounting: SMD
Case: SO14
Operating temperature: -40...85°C
Supply voltage: 4.5...5.5V DC
Manufacturer series: ACT
Trigger: positive-edge-triggered
на замовлення 20 шт:
термін постачання 14-30 дні (днів)
| Кількість | Ціна без ПДВ |
|---|---|
| 13+ | 36.13 грн |
| 19+ | 23.23 грн |
| MC74ACT74DTR2G |
![]() |
Виробник: ONSEMI
Category: Flip-Flops
Description: IC: digital; D flip-flop; Ch: 2; IN: 4; TTL; ACT; SMD; TSSOP14; ACT
Type of integrated circuit: digital
Kind of integrated circuit: D flip-flop
Number of channels: 2
Number of inputs: 4
Technology: TTL
Mounting: SMD
Case: TSSOP14
Operating temperature: -40...85°C
Family: ACT
Supply voltage: 4.5...5.5V DC
Manufacturer series: ACT
Kind of package: reel; tape
Category: Flip-Flops
Description: IC: digital; D flip-flop; Ch: 2; IN: 4; TTL; ACT; SMD; TSSOP14; ACT
Type of integrated circuit: digital
Kind of integrated circuit: D flip-flop
Number of channels: 2
Number of inputs: 4
Technology: TTL
Mounting: SMD
Case: TSSOP14
Operating temperature: -40...85°C
Family: ACT
Supply voltage: 4.5...5.5V DC
Manufacturer series: ACT
Kind of package: reel; tape
товару немає в наявності
Мінімальне замовлення: 2500 шт
В кошику
од. на суму грн.
| ES2D |
![]() |
Виробник: ONSEMI
Category: SMD universal diodes
Description: Diode: rectifying; SMD; 200V; 2A; 20ns; SMB; Ufmax: 0.9V; Ifsm: 50A
Type of diode: rectifying
Mounting: SMD
Max. off-state voltage: 200V
Load current: 2A
Reverse recovery time: 20ns
Semiconductor structure: single diode
Features of semiconductor devices: fast switching
Case: SMB
Max. forward voltage: 0.9V
Max. forward impulse current: 50A
Kind of package: reel; tape
Power dissipation: 1.66W
Leakage current: 0.35mA
Capacitance: 18pF
Category: SMD universal diodes
Description: Diode: rectifying; SMD; 200V; 2A; 20ns; SMB; Ufmax: 0.9V; Ifsm: 50A
Type of diode: rectifying
Mounting: SMD
Max. off-state voltage: 200V
Load current: 2A
Reverse recovery time: 20ns
Semiconductor structure: single diode
Features of semiconductor devices: fast switching
Case: SMB
Max. forward voltage: 0.9V
Max. forward impulse current: 50A
Kind of package: reel; tape
Power dissipation: 1.66W
Leakage current: 0.35mA
Capacitance: 18pF
на замовлення 1942 шт:
термін постачання 14-30 дні (днів)
| Кількість | Ціна без ПДВ |
|---|---|
| 14+ | 33.42 грн |
| 26+ | 16.69 грн |
| 50+ | 12.58 грн |
| 100+ | 11.49 грн |
| 250+ | 10.57 грн |
| ES2DAF |
![]() |
Виробник: ONSEMI
Category: SMD universal diodes
Description: Diode: rectifying; SMD; 200V; 2A; 35ns; SMA flat; Ufmax: 950mV
Type of diode: rectifying
Mounting: SMD
Max. off-state voltage: 200V
Load current: 2A
Reverse recovery time: 35ns
Semiconductor structure: single diode
Case: SMA flat
Max. forward voltage: 0.95V
Kind of package: reel; tape
Category: SMD universal diodes
Description: Diode: rectifying; SMD; 200V; 2A; 35ns; SMA flat; Ufmax: 950mV
Type of diode: rectifying
Mounting: SMD
Max. off-state voltage: 200V
Load current: 2A
Reverse recovery time: 35ns
Semiconductor structure: single diode
Case: SMA flat
Max. forward voltage: 0.95V
Kind of package: reel; tape
товару немає в наявності
В кошику
од. на суму грн.


































