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SZBZX84C51LT1G ONSEMI BZX84B_BZX84C.PDF Category: SMD Zener diodes
Description: Diode: Zener; 0.3W; 51V; SMD; reel,tape; SOT23; single diode; 0.05uA
Type of diode: Zener
Power dissipation: 0.3W
Zener voltage: 51V
Mounting: SMD
Tolerance: ±5%
Kind of package: reel; tape
Case: SOT23
Semiconductor structure: single diode
Leakage current: 50nA
Manufacturer series: BZX84C
Application: automotive industry
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BAV99LT3G BAV99LT3G ONSEMI BAV99LT3G.PDF Category: SMD universal diodes
Description: Diode: switching; SMD; 100V; 0.215A; 6ns; SOT23; Ufmax: 1.75V; 225mW
Type of diode: switching
Mounting: SMD
Max. off-state voltage: 100V
Load current: 0.215A
Reverse recovery time: 6ns
Semiconductor structure: double series
Capacitance: 1.5pF
Case: SOT23
Max. forward voltage: 1.75V
Max. forward impulse current: 2A
Power dissipation: 0.225W
Kind of package: reel; tape
Max. load current: 0.45A
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MC33064P-5G MC33064P-5G ONSEMI MC33064_MC34064_NCV33064.PDF description Category: Watchdog and reset circuits
Description: IC: supervisor circuit; power on reset monitor (PoR); 1÷6.5VDC
Type of integrated circuit: supervisor circuit
Kind of integrated circuit: power on reset monitor (PoR)
Kind of RESET output: open collector
Active logical level: low
Supply voltage: 1...6.5V DC
Case: TO92
Operating temperature: -40...85°C
Mounting: SMD
DC supply current: 390µA
Maximum output current: 60mA
Threshold on-voltage: 4.59V
Kind of package: bulk
Number of channels: 1
на замовлення 1348 шт:
термін постачання 21-30 дні (днів)
10+47.03 грн
14+30.90 грн
25+27.69 грн
100+24.22 грн
250+24.06 грн
Мінімальне замовлення: 10
В кошику  од. на суму  грн.
MC33064D-5G MC33064D-5G ONSEMI MC33064_MC34064_NCV33064.PDF description Category: Watchdog and reset circuits
Description: IC: supervisor circuit; power on reset monitor (PoR); 1÷6.5VDC
Type of integrated circuit: supervisor circuit
Kind of integrated circuit: power on reset monitor (PoR)
Kind of RESET output: open collector
Active logical level: low
Supply voltage: 1...6.5V DC
Case: SO8
Operating temperature: -40...85°C
Mounting: SMD
DC supply current: 390µA
Maximum output current: 60mA
Threshold on-voltage: 4.59V
Number of channels: 1
на замовлення 344 шт:
термін постачання 21-30 дні (днів)
11+41.71 грн
15+27.60 грн
25+26.78 грн
Мінімальне замовлення: 11
В кошику  од. на суму  грн.
ES3D ES3D ONSEMI ES3J.pdf Category: SMD universal diodes
Description: Diode: rectifying; SMD; 200V; 3A; 30ns; SMC; Ufmax: 0.95V; Ifsm: 100A
Type of diode: rectifying
Mounting: SMD
Max. off-state voltage: 200V
Load current: 3A
Reverse recovery time: 30ns
Semiconductor structure: single diode
Capacitance: 45pF
Case: SMC
Max. forward voltage: 0.95V
Max. forward impulse current: 100A
Features of semiconductor devices: fast switching
Power dissipation: 1.66W
Kind of package: reel; tape
на замовлення 2637 шт:
термін постачання 21-30 дні (днів)
12+38.16 грн
17+24.31 грн
50+17.06 грн
100+14.83 грн
500+14.42 грн
Мінімальне замовлення: 12
В кошику  од. на суму  грн.
BAS70LT1G BAS70LT1G ONSEMI BAS70L.pdf Category: SMD Schottky diodes
Description: Diode: Schottky switching; SOT23; SMD; 70V; 70mA; reel,tape; 225mW
Type of diode: Schottky switching
Case: SOT23
Mounting: SMD
Max. off-state voltage: 70V
Load current: 70mA
Semiconductor structure: single diode
Max. forward voltage: 0.41V
Kind of package: reel; tape
Power dissipation: 0.225W
Max. forward impulse current: 0.1A
на замовлення 5838 шт:
термін постачання 21-30 дні (днів)
63+7.10 грн
82+5.03 грн
102+4.07 грн
113+3.65 грн
250+3.11 грн
500+2.69 грн
1000+2.27 грн
3000+1.71 грн
Мінімальне замовлення: 63
В кошику  од. на суму  грн.
FDMS7602S ONSEMI fdms7602s-d.pdf Category: Multi channel transistors
Description: Transistor: N-MOSFET x2; unipolar; 30/30V; 30/30A; 2.2/2.5W
Type of transistor: N-MOSFET x2
Polarisation: unipolar
Drain-source voltage: 30/30V
Drain current: 30/30A
Power dissipation: 2.2/2.5W
Case: Power56
Gate-source voltage: ±20/±20V
On-state resistance: 12/7.2mΩ
Mounting: SMD
Gate charge: 28/46nC
Kind of package: reel; tape
Kind of channel: enhancement
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FDMS7620S ONSEMI fdms7620s-d.pdf Category: Multi channel transistors
Description: Transistor: N-MOSFET x2; unipolar; 30/30V; 13/22A; 2.2/2.5W
Type of transistor: N-MOSFET x2
Polarisation: unipolar
Drain-source voltage: 30/30V
Drain current: 13/22A
Power dissipation: 2.2/2.5W
Case: Power56
Gate-source voltage: ±20/±20V
On-state resistance: 30/15.1mΩ
Mounting: SMD
Gate charge: 11/23nC
Kind of package: reel; tape
Kind of channel: enhancement
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FDP075N15A-F102 FDP075N15A-F102 ONSEMI FDP075N15A-F102.pdf Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 150V; 92A; 333W; TO220AB
Type of transistor: N-MOSFET
Technology: PowerTrench®
Polarisation: unipolar
Drain-source voltage: 150V
Drain current: 92A
Power dissipation: 333W
Case: TO220AB
Gate-source voltage: ±20V
On-state resistance: 7.5mΩ
Mounting: THT
Gate charge: 0.1µC
Kind of package: tube
Kind of channel: enhancement
на замовлення 50 шт:
термін постачання 21-30 дні (днів)
2+256.44 грн
10+214.23 грн
50+189.51 грн
Мінімальне замовлення: 2
В кошику  од. на суму  грн.
MUR460 MUR460 ONSEMI MUR4xx.PDF Category: THT universal diodes
Description: Diode: rectifying; THT; 600V; 3A; bulk; DO27; 50ns
Type of diode: rectifying
Mounting: THT
Max. off-state voltage: 0.6kV
Load current: 3A
Kind of package: bulk
Case: DO27
Reverse recovery time: 50ns
Forward voltage at If: 1.25V
Max. load current: 4A
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BZX84C8V2LT1G BZX84C8V2LT1G ONSEMI BZX84B_BZX84C.PDF Category: SMD Zener diodes
Description: Diode: Zener; 0.3W; 8.2V; SMD; reel,tape; SOT23; single diode; 0.7uA
Type of diode: Zener
Power dissipation: 0.3W
Zener voltage: 8.2V
Mounting: SMD
Tolerance: ±5%
Kind of package: reel; tape
Case: SOT23
Semiconductor structure: single diode
Manufacturer series: BZX84C
Leakage current: 0.7µA
на замовлення 755 шт:
термін постачання 21-30 дні (днів)
63+7.10 грн
91+4.53 грн
143+2.88 грн
176+2.35 грн
250+1.80 грн
500+1.51 грн
Мінімальне замовлення: 63
В кошику  од. на суму  грн.
FAN7393AMX ONSEMI fan7393a-d.pdf Category: Buffers, transceivers, drivers
Description: Transistor: N-MOSFET; unipolar; SO14; 12÷20V
Mounting: SMD
Case: SO14
Operating temperature: -40...150°C
Kind of package: reel; tape
Supply voltage: 12...20V
Output current: 2.5A
Kind of channel: enhancement
Type of transistor: N-MOSFET
Polarisation: unipolar
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MC74HC393ADR2G MC74HC393ADR2G ONSEMI mc74hc393a-d.pdf Category: Counters/dividers
Description: IC: digital; asynchronous counter; Ch: 2; CMOS,TTL; HC; SMD; SO14; HC
Type of integrated circuit: digital
Number of channels: 2
Mounting: SMD
Case: SO14
Operating temperature: -55...125°C
Quiescent current: 160µA
Kind of package: reel; tape
Supply voltage: 2...6V DC
Kind of integrated circuit: asynchronous counter
Technology: CMOS; TTL
Family: HC
Manufacturer series: HC
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MC74HC393ADTR2G ONSEMI MC74HC393A-D.pdf Category: Counters/dividers
Description: IC: digital; 4-stage,binary ripple counter; Ch: 2; IN: 2; CMOS; HC
Type of integrated circuit: digital
Number of channels: 2
Mounting: SMD
Case: TSSOP14
Operating temperature: -55...125°C
Kind of package: reel; tape
Number of inputs: 2
Supply voltage: 2...6V DC
Kind of integrated circuit: 4-stage; binary ripple counter
Technology: CMOS
Family: HC
Manufacturer series: HC
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1N916B ONSEMI 1n914-d.pdf FAIR-S-A0001232564-1.pdf?t.download=true&u=5oefqw Category: THT universal diodes
Description: Diode: switching; THT; 100V; 0.3A; bulk; Ifsm: 4A; DO35; 4ns
Type of diode: switching
Mounting: THT
Max. off-state voltage: 100V
Load current: 0.3A
Semiconductor structure: single diode
Features of semiconductor devices: small signal
Kind of package: bulk
Max. forward impulse current: 4A
Case: DO35
Reverse recovery time: 4ns
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MC74VHC1G05DTT1G
+1
 		MC74VHC1G05DTT1G ONSEMI mc74vhc1g05-d.pdf Category: Gates, inverters
Description: IC: digital; NOT; Ch: 1; IN: 1; CMOS; SMD; TSSOP5; 2÷5.5VDC; -55÷125°C
Type of integrated circuit: digital
Kind of gate: NOT
Number of channels: single; 1
Number of inputs: 1
Technology: CMOS
Mounting: SMD
Case: TSSOP5
Supply voltage: 2...5.5V DC
Operating temperature: -55...125°C
Kind of package: reel; tape
Quiescent current: 40µA
Kind of output: open drain
Family: VHC
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NTJS4151PT1G NTJS4151PT1G ONSEMI ntjs4151p-d.pdf Category: SMD P channel transistors
Description: Transistor: P-MOSFET; unipolar; -20V; -2.4A; 1W
Type of transistor: P-MOSFET
Polarisation: unipolar
Drain-source voltage: -20V
Drain current: -2.4A
Power dissipation: 1W
Case: SC70-6; SC88; SOT363
Gate-source voltage: ±12V
On-state resistance: 60mΩ
Mounting: SMD
Kind of package: reel; tape
Kind of channel: enhancement
на замовлення 160 шт:
термін постачання 21-30 дні (днів)
21+21.30 грн
30+14.17 грн
50+11.29 грн
100+10.30 грн
Мінімальне замовлення: 21
В кошику  од. на суму  грн.
MC14490DWG MC14490DWG ONSEMI MC14490DWG.pdf Category: Other logic integrated circuits
Description: IC: digital; contact bounce eliminator; CMOS; 3÷18VDC; SMD; SO16
Type of integrated circuit: digital
Kind of integrated circuit: contact bounce eliminator
Technology: CMOS
Supply voltage: 3...18V DC
Mounting: SMD
Case: SO16
Operating temperature: -40...85°C
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MC14490DWR2G MC14490DWR2G ONSEMI MC14490-D.pdf Category: Other logic integrated circuits
Description: IC: digital; contact bounce eliminator,hex; Ch: 1; CMOS; 3÷18VDC
Type of integrated circuit: digital
Kind of integrated circuit: contact bounce eliminator; hex
Number of channels: 1
Technology: CMOS
Supply voltage: 3...18V DC
Mounting: SMD
Case: SOIC16
Operating temperature: -55...125°C
Kind of package: reel; tape
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MMBFJ177 ONSEMI MMBFJ17X-DTE.pdf Category: SMD P channel transistors
Description: Transistor: P-JFET; unipolar; 1.5mA; 0.225W; SOT23; Igt: 50mA
Type of transistor: P-JFET
Polarisation: unipolar
Drain current: 1.5mA
Power dissipation: 0.225W
Case: SOT23
On-state resistance: 300Ω
Mounting: SMD
Kind of package: reel; tape
Gate current: 50mA
Gate-source voltage: 30V
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MOC3042M MOC3042M ONSEMI MOC3042M.pdf Category: Optotriacs
Description: Optotriac; 4.17kV; triac; DIP6; Ch: 1; MOC304XM; 1kV/μs
Type of optocoupler: optotriac
Insulation voltage: 4.17kV
Kind of output: triac
Case: DIP6
Mounting: THT
Number of channels: 1
Slew rate: 1kV/μs
Manufacturer series: MOC304XM
на замовлення 1000 шт:
термін постачання 21-30 дні (днів)
7+64.78 грн
12+35.76 грн
25+30.57 грн
50+27.44 грн
100+24.72 грн
500+24.22 грн
Мінімальне замовлення: 7
В кошику  од. на суму  грн.
MOC3042SM ONSEMI MOC3040_41_42_43.pdf MOC3043M-D.PDF Category: Optotriacs
Description: Optotriac; 4.17kV; Uout: 400V; triac; SMT6; Ch: 1; MOC304XM; tube
Type of optocoupler: optotriac
Insulation voltage: 4.17kV
Kind of output: triac
Case: SMT6
Max. off-state voltage: 6V
Trigger current: 10mA
Mounting: SMD
Number of channels: 1
Kind of package: tube
Output voltage: 400V
Manufacturer series: MOC304XM
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MOC3042SR2M ONSEMI MOC3043M-D.PDF Category: Optotriacs
Description: Optotriac; 4.17kV; Uout: 400V; triac; SMT6; Ch: 1; MOC304XM
Type of optocoupler: optotriac
Insulation voltage: 4.17kV
Kind of output: triac
Case: SMT6
Max. off-state voltage: 6V
Trigger current: 10mA
Mounting: SMD
Number of channels: 1
Kind of package: reel; tape
Output voltage: 400V
Manufacturer series: MOC304XM
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MOC3042SR2VM ONSEMI MOC3043M-D.PDF Category: Optotriacs
Description: Optotriac; 4.17kV; Uout: 400V; triac; SMT6; Ch: 1; MOC304XM
Type of optocoupler: optotriac
Insulation voltage: 4.17kV
Kind of output: triac
Case: SMT6
Max. off-state voltage: 6V
Trigger current: 10mA
Mounting: SMD
Number of channels: 1
Conform to the norm: VDE
Kind of package: reel; tape
Output voltage: 400V
Manufacturer series: MOC304XM
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MOC3042SVM ONSEMI MOC3043M-D.PDF Category: Optotriacs
Description: Optotriac; 4.17kV; Uout: 400V; triac; SMT6; Ch: 1; MOC304XM; tube
Type of optocoupler: optotriac
Insulation voltage: 4.17kV
Kind of output: triac
Case: SMT6
Max. off-state voltage: 6V
Trigger current: 10mA
Mounting: SMD
Number of channels: 1
Conform to the norm: VDE
Kind of package: tube
Output voltage: 400V
Manufacturer series: MOC304XM
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MOC3042TVM ONSEMI MOC3043M-D.PDF moc3043m-d.pdf Category: Optotriacs
Description: Optotriac; 4.17kV; Uout: 400V; triac; DIP6; Ch: 1; MOC304XM; tube
Type of optocoupler: optotriac
Insulation voltage: 4.17kV
Kind of output: triac
Case: DIP6
Max. off-state voltage: 6V
Trigger current: 10mA
Mounting: THT
Number of channels: 1
Conform to the norm: VDE
Kind of package: tube
Output voltage: 400V
Manufacturer series: MOC304XM
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MOC3042VM ONSEMI MOC3043M-D.PDF Category: Optotriacs
Description: Optotriac; 4.17kV; Uout: 400V; triac; DIP6; Ch: 1; MOC304XM; tube
Type of optocoupler: optotriac
Insulation voltage: 4.17kV
Kind of output: triac
Case: DIP6
Max. off-state voltage: 6V
Trigger current: 10mA
Mounting: THT
Number of channels: 1
Conform to the norm: VDE
Kind of package: tube
Output voltage: 400V
Manufacturer series: MOC304XM
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FDA16N50-F109 FDA16N50-F109 ONSEMI FDA16N50_F109.PDF Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 500V; 9.9A; Idm: 66A; 205W; TO3PN
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 500V
Drain current: 9.9A
Pulsed drain current: 66A
Power dissipation: 205W
Case: TO3PN
Gate-source voltage: ±30V
On-state resistance: 0.38Ω
Mounting: THT
Gate charge: 45nC
Kind of package: tube
Kind of channel: enhancement
Technology: UniFET™
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FDA16N50LDTU ONSEMI FAIR-S-A0002365536-1.pdf?t.download=true&u=5oefqw fda16n50ldtu-d.pdf Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 500V; 3.3A; Idm: 66A; 205W; TO3PN
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 500V
Drain current: 3.3A
Pulsed drain current: 66A
Power dissipation: 205W
Case: TO3PN
Gate-source voltage: ±30V
On-state resistance: 0.38Ω
Mounting: THT
Gate charge: 45nC
Kind of package: tube
Kind of channel: enhancement
Technology: DMOS; UniFET™
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FQAF16N50 FQAF16N50 ONSEMI FQAF16N50.pdf Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 500V; 7.15A; 110W; TO3PF
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 500V
Drain current: 7.15A
Power dissipation: 110W
Case: TO3PF
Gate-source voltage: ±30V
On-state resistance: 0.32Ω
Mounting: THT
Gate charge: 75nC
Kind of package: tube
Kind of channel: enhancement
Technology: QFET®
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1N4934RLG ONSEMI 1n4933-d.pdf Category: THT universal diodes
Description: Diode: rectifying; THT; 100V; 1A; reel,tape; Ifsm: 30A; DO41; 300ns
Type of diode: rectifying
Mounting: THT
Max. off-state voltage: 100V
Load current: 1A
Semiconductor structure: single diode
Kind of package: reel; tape
Max. forward impulse current: 30A
Case: DO41
Reverse recovery time: 300ns
Features of semiconductor devices: fast switching
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1N4934G ONSEMI 1N4933_7.PDF Category: THT universal diodes
Description: Diode: rectifying; THT; 100V; 1A; bulk; Ifsm: 30A; CASE59-10,DO41
Type of diode: rectifying
Mounting: THT
Max. off-state voltage: 100V
Load current: 1A
Semiconductor structure: single diode
Kind of package: bulk
Max. forward impulse current: 30A
Case: CASE59-10; DO41
Max. forward voltage: 1.2V
Reverse recovery time: 200ns
Features of semiconductor devices: fast switching
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MBR2035CT ONSEMI MBR2060CT-D.pdf MBR2035-2045CT(-1)%20MBRB2035-2045CT%20N0186%20REV.A.pdf vs-mbr20cthn3.pdf MBR2035CT%20SERIES_M2104.pdf Category: THT Schottky diodes
Description: Diode: Schottky rectifying; THT; 35V; 10Ax2; TO220AB; Ufmax: 0.95V
Type of diode: Schottky rectifying
Mounting: THT
Max. off-state voltage: 35V
Load current: 10A x2
Semiconductor structure: common cathode; double
Case: TO220AB
Max. forward voltage: 0.95V
Kind of package: tube
Max. forward impulse current: 150A
Max. load current: 20A
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MBR2535CTG ONSEMI mbr2535ct-d.pdf Category: THT Schottky diodes
Description: Diode: Schottky rectifying; THT; 35V; 15Ax2; TO220AB; Ufmax: 0.72V
Type of diode: Schottky rectifying
Mounting: THT
Max. off-state voltage: 35V
Load current: 15A x2
Semiconductor structure: common cathode; double
Case: TO220AB
Max. forward voltage: 0.72V
Kind of package: tube
Max. forward impulse current: 150A
Max. load current: 30A
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MBR2535CTLG ONSEMI mbr2535ctl-d.pdf Category: THT Schottky diodes
Description: Diode: Schottky rectifying; THT; 35V; 12.5Ax2; TO220AB; tube
Type of diode: Schottky rectifying
Mounting: THT
Max. off-state voltage: 35V
Load current: 12.5A x2
Semiconductor structure: common cathode; double
Case: TO220AB
Max. forward voltage: 0.41V
Kind of package: tube
Max. forward impulse current: 150A
Max. load current: 25A
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ISL9V5036S3ST ISL9V5036S3ST ONSEMI ISL9V5036.pdf Category: SMD IGBT transistors
Description: Transistor: IGBT; 390V; 31A; 250W; D2PAK; Features: logic level
Type of transistor: IGBT
Collector-emitter voltage: 390V
Collector current: 31A
Power dissipation: 250W
Case: D2PAK
Mounting: SMD
Gate charge: 32nC
Kind of package: reel; tape
Features of semiconductor devices: logic level
Application: ignition systems
Version: ESD
Gate-emitter voltage: ±10V
на замовлення 693 шт:
термін постачання 21-30 дні (днів)
2+354.94 грн
5+275.21 грн
10+244.72 грн
50+201.05 грн
Мінімальне замовлення: 2
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FGB3040G2-F085 FGB3040G2-F085 ONSEMI fgi3040g2_f085-d.pdf Category: SMD IGBT transistors
Description: Transistor: IGBT; 400V; 25.6A; 150W; D2PAK; Features: logic level
Type of transistor: IGBT
Collector-emitter voltage: 400V
Collector current: 25.6A
Power dissipation: 150W
Case: D2PAK
Mounting: SMD
Gate charge: 21nC
Kind of package: reel; tape
Features of semiconductor devices: logic level
Application: ignition systems
Version: ESD
Gate-emitter voltage: ±10V
на замовлення 717 шт:
термін постачання 21-30 дні (днів)
3+201.43 грн
10+168.09 грн
100+156.55 грн
250+155.73 грн
Мінімальне замовлення: 3
В кошику  од. на суму  грн.
ISL9V5045S3ST-F085 ONSEMI isl9v5045s-f085-d.pdf Category: SMD IGBT transistors
Description: Transistor: IGBT; 450V; 43A; 300W; D2PAK; Features: logic level
Type of transistor: IGBT
Collector-emitter voltage: 450V
Collector current: 43A
Power dissipation: 300W
Case: D2PAK
Mounting: SMD
Gate charge: 32nC
Kind of package: reel; tape
Features of semiconductor devices: logic level
Application: ignition systems
Version: ESD
Gate-emitter voltage: ±10V
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FGB3245G2-F085 ONSEMI fgd3245g2-f085-d.pdf Category: SMD IGBT transistors
Description: Transistor: IGBT; 450V; 27A; 150W; D2PAK; Features: logic level
Type of transistor: IGBT
Collector-emitter voltage: 450V
Collector current: 27A
Power dissipation: 150W
Case: D2PAK
Mounting: SMD
Gate charge: 23nC
Kind of package: reel; tape
Features of semiconductor devices: logic level
Application: ignition systems
Version: ESD
Gate-emitter voltage: ±10V
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FGD3245G2-F085C ONSEMI fgd3245g2-f085c-d.pdf Category: SMD IGBT transistors
Description: Transistor: IGBT; 450V; 23A; 150W; DPAK; Features: logic level; ESD
Type of transistor: IGBT
Collector-emitter voltage: 450V
Collector current: 23A
Power dissipation: 150W
Case: DPAK
Gate-emitter voltage: ±10V
Mounting: SMD
Gate charge: 23nC
Kind of package: reel; tape
Features of semiconductor devices: logic level
Application: ignition systems
Version: ESD
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FGD3440G2-F085 ONSEMI FG%28B%2CD%2CP%293440G2_F085.pdf Category: SMD IGBT transistors
Description: Transistor: IGBT; 400V; 25A; 166W; DPAK; Features: logic level; ESD
Type of transistor: IGBT
Collector-emitter voltage: 400V
Collector current: 25A
Power dissipation: 166W
Case: DPAK
Gate-emitter voltage: ±10V
Mounting: SMD
Gate charge: 24nC
Kind of package: reel; tape
Features of semiconductor devices: logic level
Application: ignition systems
Version: ESD
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ISL9V2040D3ST ONSEMI ISL9V2040D-F085-D.pdf Category: SMD IGBT transistors
Description: Transistor: IGBT; 400V; 10A; 130W; DPAK; Features: logic level; ESD
Type of transistor: IGBT
Collector-emitter voltage: 400V
Collector current: 10A
Power dissipation: 130W
Case: DPAK
Mounting: SMD
Gate charge: 12nC
Kind of package: reel; tape
Features of semiconductor devices: logic level
Application: ignition systems
Version: ESD
Gate-emitter voltage: ±10V
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ISL9V5036P3-F085 ONSEMI isl9v5036s3st-d.pdf Category: THT IGBT transistors
Description: Transistor: IGBT; 360V; 31A; 250W; TO220-3; Features: logic level
Type of transistor: IGBT
Collector-emitter voltage: 360V
Collector current: 31A
Power dissipation: 250W
Case: TO220-3
Mounting: THT
Gate charge: 32nC
Kind of package: tube
Features of semiconductor devices: logic level
Application: ignition systems
Version: ESD
Gate-emitter voltage: ±10V
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ISL9V3040D3ST-F085C ONSEMI isl9v3040-f085c-d.pdf Category: SMD IGBT transistors
Description: Transistor: IGBT; 400V; 17A; 150W; DPAK; Features: logic level; ESD
Type of transistor: IGBT
Collector-emitter voltage: 400V
Collector current: 17A
Power dissipation: 150W
Case: DPAK
Gate-emitter voltage: ±10V
Mounting: SMD
Gate charge: 17nC
Kind of package: reel; tape
Features of semiconductor devices: logic level
Application: ignition systems
Version: ESD
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FGD3050G2 ONSEMI fgd3050g2-d.pdf Category: SMD IGBT transistors
Description: Transistor: IGBT; 500V; 27A; 150W; DPAK; Features: logic level; ESD
Type of transistor: IGBT
Collector-emitter voltage: 500V
Collector current: 27A
Power dissipation: 150W
Case: DPAK
Gate-emitter voltage: ±10V
Mounting: SMD
Gate charge: 22nC
Kind of package: reel; tape
Features of semiconductor devices: logic level
Application: ignition systems
Version: ESD
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ISL9V5045S3ST-F085C ONSEMI isl9v5045s3st-f085c-d.pdf Category: SMD IGBT transistors
Description: Transistor: IGBT; 450V; 43A; 300W; D2PAK; Features: logic level
Type of transistor: IGBT
Collector-emitter voltage: 450V
Collector current: 43A
Power dissipation: 300W
Case: D2PAK
Mounting: SMD
Gate charge: 32nC
Kind of package: reel; tape
Features of semiconductor devices: logic level
Application: ignition systems
Version: ESD
Gate-emitter voltage: ±10V
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FGP3440G2-F085 FGP3440G2-F085 ONSEMI FGx3440G2_F085.PDF Category: THT IGBT transistors
Description: Transistor: IGBT; 400V; 25A; 166W; TO220-3; Features: logic level
Type of transistor: IGBT
Collector-emitter voltage: 400V
Collector current: 25A
Power dissipation: 166W
Case: TO220-3
Mounting: THT
Kind of package: tube
Features of semiconductor devices: logic level
Application: ignition systems
Version: ESD
Gate-emitter voltage: ±10V
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ISL9V3040D3ST ONSEMI ISL9V3040P3-D.PDF Category: SMD IGBT transistors
Description: Transistor: IGBT; 400V; 17A; 150W; DPAK; Features: logic level; ESD
Type of transistor: IGBT
Collector-emitter voltage: 400V
Collector current: 17A
Power dissipation: 150W
Case: DPAK
Gate-emitter voltage: ±10V
Mounting: SMD
Gate charge: 17nC
Kind of package: reel; tape
Features of semiconductor devices: logic level
Application: ignition systems
Version: ESD
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ISL9V3040S3ST ONSEMI ISL9V3040P3-D.PDF Category: SMD IGBT transistors
Description: Transistor: IGBT; 430V; 17A; 150W; D2PAK; Features: logic level
Type of transistor: IGBT
Collector-emitter voltage: 430V
Collector current: 17A
Power dissipation: 150W
Case: D2PAK
Mounting: SMD
Gate charge: 17nC
Kind of package: reel; tape
Features of semiconductor devices: logic level
Application: ignition systems
Version: ESD
Gate-emitter voltage: ±10V
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ISL9V3040S3ST-F085C ONSEMI isl9v3040-f085c-d.pdf Category: SMD IGBT transistors
Description: Transistor: IGBT; 400V; 17A; 150W; D2PAK; Features: logic level
Type of transistor: IGBT
Collector-emitter voltage: 400V
Collector current: 17A
Power dissipation: 150W
Case: D2PAK
Mounting: SMD
Gate charge: 17nC
Kind of package: reel; tape
Features of semiconductor devices: logic level
Application: ignition systems
Version: ESD
Gate-emitter voltage: ±10V
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FGD3040G2-F085V ONSEMI fgd3040g2-f085v-d.pdf Category: SMD IGBT transistors
Description: Transistor: IGBT; 400V; 25.6A; 150W; DPAK; Features: logic level
Type of transistor: IGBT
Collector-emitter voltage: 400V
Collector current: 25.6A
Power dissipation: 150W
Case: DPAK
Gate-emitter voltage: ±10V
Mounting: SMD
Gate charge: 21nC
Kind of package: reel; tape
Features of semiconductor devices: logic level
Application: ignition systems
Version: ESD
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FGD3040G2-F085 ONSEMI fgi3040g2_f085-d.pdf Category: SMD IGBT transistors
Description: Transistor: IGBT; 400V; 25.6A; 150W; DPAK; Features: logic level
Type of transistor: IGBT
Collector-emitter voltage: 400V
Collector current: 25.6A
Power dissipation: 150W
Case: DPAK
Gate-emitter voltage: ±10V
Mounting: SMD
Gate charge: 21nC
Kind of package: reel; tape
Features of semiconductor devices: logic level
Application: ignition systems
Version: ESD
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FGB3040G2-F085C ONSEMI fgx3040g2-f085c-d.pdf Category: SMD IGBT transistors
Description: Transistor: IGBT; 400V; 25.6A; 150W; D2PAK; Features: logic level
Type of transistor: IGBT
Collector-emitter voltage: 400V
Collector current: 25.6A
Power dissipation: 150W
Case: D2PAK
Mounting: SMD
Gate charge: 21nC
Kind of package: reel; tape
Features of semiconductor devices: logic level
Application: ignition systems
Version: ESD
Gate-emitter voltage: ±10V
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FGD2736G3-F085V ONSEMI FGD2736G3-F085V.PDF Category: SMD IGBT transistors
Description: Transistor: IGBT; 360V; 24.3A; 150W; DPAK; Features: logic level
Type of transistor: IGBT
Collector-emitter voltage: 360V
Collector current: 24.3A
Power dissipation: 150W
Case: DPAK
Mounting: SMD
Gate charge: 18nC
Kind of package: reel; tape
Features of semiconductor devices: logic level
Application: ignition systems
Version: ESD
Gate-emitter voltage: ±10V
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FGD3040G2-F085C ONSEMI fgx3040g2-f085c-d.pdf Category: SMD IGBT transistors
Description: Transistor: IGBT; 400V; 25.6A; 150W; DPAK; Features: logic level
Type of transistor: IGBT
Collector-emitter voltage: 400V
Collector current: 25.6A
Power dissipation: 150W
Case: DPAK
Gate-emitter voltage: ±10V
Mounting: SMD
Gate charge: 21nC
Kind of package: reel; tape
Features of semiconductor devices: logic level
Application: ignition systems
Version: ESD
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US2JA ONSEMI us2aa-d.pdf Category: SMD universal diodes
Description: Diode: rectifying; SMD; 600V; 1.5A; 75ns; SMA; Ufmax: 1.7V; reel,tape
Type of diode: rectifying
Mounting: SMD
Max. off-state voltage: 0.6kV
Load current: 1.5A
Reverse recovery time: 75ns
Semiconductor structure: single diode
Case: SMA
Max. forward voltage: 1.7V
Kind of package: reel; tape
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NRVUS2JA NRVUS2JA ONSEMI us2aa-d.pdf Category: SMD universal diodes
Description: Diode: rectifying; SMD; 600V; 1.5A; 75ns; SMA; Ufmax: 1.7V; Ifsm: 50A
Type of diode: rectifying
Mounting: SMD
Max. off-state voltage: 0.6kV
Load current: 1.5A
Reverse recovery time: 75ns
Semiconductor structure: single diode
Case: SMA
Max. forward voltage: 1.7V
Max. forward impulse current: 50A
Kind of package: reel; tape
Application: automotive industry
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NCP5623BMUTBG ONSEMI Category: LED drivers
Description: IC: driver; LED driver; I2C; LLGA12; 90mA; 4.4÷5.7V; Ch: 3; PWM
Mounting: SMD
Supply voltage: 2.7...5.5V DC
Operating temperature: -40...85°C
Number of channels: 3
Application: for RGB power LED applications
Case: LLGA12
Integrated circuit features: PWM
Output current: 90mA
Output voltage: 4.4...5.7V
Type of integrated circuit: driver
Interface: I2C
Kind of integrated circuit: LED driver
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2N6520TA 2N6520TA ONSEMI 2n6515-d.pdf Category: PNP THT transistors
Description: Transistor: PNP; bipolar; 350V; 0.5A; 0.625W; TO92 Formed
Type of transistor: PNP
Polarisation: bipolar
Power dissipation: 0.625W
Case: TO92 Formed
Mounting: THT
Kind of package: Ammo Pack
Collector current: 0.5A
Current gain: 30...200
Frequency: 40...200MHz
Collector-emitter voltage: 350V
на замовлення 607 шт:
термін постачання 21-30 дні (днів)
24+18.63 грн
51+8.16 грн
100+6.00 грн
500+4.79 грн
Мінімальне замовлення: 24
В кошику  од. на суму  грн.
74AC14SC 74AC14SC ONSEMI 74AC14SC.pdf description Category: Gates, inverters
Description: IC: digital; NOT; Ch: 6; IN: 1; SMD; SO14; 2÷6VDC; -40÷85°C; tube; 40uA
Mounting: SMD
Number of channels: hex; 6
Case: SO14
Kind of input: with Schmitt trigger
Operating temperature: -40...85°C
Quiescent current: 40µA
Number of inputs: 1
Supply voltage: 2...6V DC
Family: AC
Kind of package: tube
Type of integrated circuit: digital
Kind of gate: NOT
на замовлення 654 шт:
термін постачання 21-30 дні (днів)
12+38.16 грн
17+24.55 грн
25+24.22 грн
Мінімальне замовлення: 12
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SZBZX84C51LT1G BZX84B_BZX84C.PDF
Виробник: ONSEMI
Category: SMD Zener diodes
Description: Diode: Zener; 0.3W; 51V; SMD; reel,tape; SOT23; single diode; 0.05uA
Type of diode: Zener
Power dissipation: 0.3W
Zener voltage: 51V
Mounting: SMD
Tolerance: ±5%
Kind of package: reel; tape
Case: SOT23
Semiconductor structure: single diode
Leakage current: 50nA
Manufacturer series: BZX84C
Application: automotive industry
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BAV99LT3G BAV99LT3G.PDF
BAV99LT3G
Виробник: ONSEMI
Category: SMD universal diodes
Description: Diode: switching; SMD; 100V; 0.215A; 6ns; SOT23; Ufmax: 1.75V; 225mW
Type of diode: switching
Mounting: SMD
Max. off-state voltage: 100V
Load current: 0.215A
Reverse recovery time: 6ns
Semiconductor structure: double series
Capacitance: 1.5pF
Case: SOT23
Max. forward voltage: 1.75V
Max. forward impulse current: 2A
Power dissipation: 0.225W
Kind of package: reel; tape
Max. load current: 0.45A
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MC33064P-5G description MC33064_MC34064_NCV33064.PDF
MC33064P-5G
Виробник: ONSEMI
Category: Watchdog and reset circuits
Description: IC: supervisor circuit; power on reset monitor (PoR); 1÷6.5VDC
Type of integrated circuit: supervisor circuit
Kind of integrated circuit: power on reset monitor (PoR)
Kind of RESET output: open collector
Active logical level: low
Supply voltage: 1...6.5V DC
Case: TO92
Operating temperature: -40...85°C
Mounting: SMD
DC supply current: 390µA
Maximum output current: 60mA
Threshold on-voltage: 4.59V
Kind of package: bulk
Number of channels: 1
на замовлення 1348 шт:
термін постачання 21-30 дні (днів)
Кількість Ціна
10+47.03 грн
14+30.90 грн
25+27.69 грн
100+24.22 грн
250+24.06 грн
Мінімальне замовлення: 10
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MC33064D-5G description MC33064_MC34064_NCV33064.PDF
MC33064D-5G
Виробник: ONSEMI
Category: Watchdog and reset circuits
Description: IC: supervisor circuit; power on reset monitor (PoR); 1÷6.5VDC
Type of integrated circuit: supervisor circuit
Kind of integrated circuit: power on reset monitor (PoR)
Kind of RESET output: open collector
Active logical level: low
Supply voltage: 1...6.5V DC
Case: SO8
Operating temperature: -40...85°C
Mounting: SMD
DC supply current: 390µA
Maximum output current: 60mA
Threshold on-voltage: 4.59V
Number of channels: 1
на замовлення 344 шт:
термін постачання 21-30 дні (днів)
Кількість Ціна
11+41.71 грн
15+27.60 грн
25+26.78 грн
Мінімальне замовлення: 11
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ES3D ES3J.pdf
ES3D
Виробник: ONSEMI
Category: SMD universal diodes
Description: Diode: rectifying; SMD; 200V; 3A; 30ns; SMC; Ufmax: 0.95V; Ifsm: 100A
Type of diode: rectifying
Mounting: SMD
Max. off-state voltage: 200V
Load current: 3A
Reverse recovery time: 30ns
Semiconductor structure: single diode
Capacitance: 45pF
Case: SMC
Max. forward voltage: 0.95V
Max. forward impulse current: 100A
Features of semiconductor devices: fast switching
Power dissipation: 1.66W
Kind of package: reel; tape
на замовлення 2637 шт:
термін постачання 21-30 дні (днів)
Кількість Ціна
12+38.16 грн
17+24.31 грн
50+17.06 грн
100+14.83 грн
500+14.42 грн
Мінімальне замовлення: 12
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BAS70LT1G BAS70L.pdf
BAS70LT1G
Виробник: ONSEMI
Category: SMD Schottky diodes
Description: Diode: Schottky switching; SOT23; SMD; 70V; 70mA; reel,tape; 225mW
Type of diode: Schottky switching
Case: SOT23
Mounting: SMD
Max. off-state voltage: 70V
Load current: 70mA
Semiconductor structure: single diode
Max. forward voltage: 0.41V
Kind of package: reel; tape
Power dissipation: 0.225W
Max. forward impulse current: 0.1A
на замовлення 5838 шт:
термін постачання 21-30 дні (днів)
Кількість Ціна
63+7.10 грн
82+5.03 грн
102+4.07 грн
113+3.65 грн
250+3.11 грн
500+2.69 грн
1000+2.27 грн
3000+1.71 грн
Мінімальне замовлення: 63
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FDMS7602S fdms7602s-d.pdf
Виробник: ONSEMI
Category: Multi channel transistors
Description: Transistor: N-MOSFET x2; unipolar; 30/30V; 30/30A; 2.2/2.5W
Type of transistor: N-MOSFET x2
Polarisation: unipolar
Drain-source voltage: 30/30V
Drain current: 30/30A
Power dissipation: 2.2/2.5W
Case: Power56
Gate-source voltage: ±20/±20V
On-state resistance: 12/7.2mΩ
Mounting: SMD
Gate charge: 28/46nC
Kind of package: reel; tape
Kind of channel: enhancement
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FDMS7620S fdms7620s-d.pdf
Виробник: ONSEMI
Category: Multi channel transistors
Description: Transistor: N-MOSFET x2; unipolar; 30/30V; 13/22A; 2.2/2.5W
Type of transistor: N-MOSFET x2
Polarisation: unipolar
Drain-source voltage: 30/30V
Drain current: 13/22A
Power dissipation: 2.2/2.5W
Case: Power56
Gate-source voltage: ±20/±20V
On-state resistance: 30/15.1mΩ
Mounting: SMD
Gate charge: 11/23nC
Kind of package: reel; tape
Kind of channel: enhancement
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FDP075N15A-F102 FDP075N15A-F102.pdf
FDP075N15A-F102
Виробник: ONSEMI
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 150V; 92A; 333W; TO220AB
Type of transistor: N-MOSFET
Technology: PowerTrench®
Polarisation: unipolar
Drain-source voltage: 150V
Drain current: 92A
Power dissipation: 333W
Case: TO220AB
Gate-source voltage: ±20V
On-state resistance: 7.5mΩ
Mounting: THT
Gate charge: 0.1µC
Kind of package: tube
Kind of channel: enhancement
на замовлення 50 шт:
термін постачання 21-30 дні (днів)
Кількість Ціна
2+256.44 грн
10+214.23 грн
50+189.51 грн
Мінімальне замовлення: 2
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MUR460 MUR4xx.PDF
MUR460
Виробник: ONSEMI
Category: THT universal diodes
Description: Diode: rectifying; THT; 600V; 3A; bulk; DO27; 50ns
Type of diode: rectifying
Mounting: THT
Max. off-state voltage: 0.6kV
Load current: 3A
Kind of package: bulk
Case: DO27
Reverse recovery time: 50ns
Forward voltage at If: 1.25V
Max. load current: 4A
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BZX84C8V2LT1G BZX84B_BZX84C.PDF
BZX84C8V2LT1G
Виробник: ONSEMI
Category: SMD Zener diodes
Description: Diode: Zener; 0.3W; 8.2V; SMD; reel,tape; SOT23; single diode; 0.7uA
Type of diode: Zener
Power dissipation: 0.3W
Zener voltage: 8.2V
Mounting: SMD
Tolerance: ±5%
Kind of package: reel; tape
Case: SOT23
Semiconductor structure: single diode
Manufacturer series: BZX84C
Leakage current: 0.7µA
на замовлення 755 шт:
термін постачання 21-30 дні (днів)
Кількість Ціна
63+7.10 грн
91+4.53 грн
143+2.88 грн
176+2.35 грн
250+1.80 грн
500+1.51 грн
Мінімальне замовлення: 63
В кошику  од. на суму  грн.
FAN7393AMX fan7393a-d.pdf
Виробник: ONSEMI
Category: Buffers, transceivers, drivers
Description: Transistor: N-MOSFET; unipolar; SO14; 12÷20V
Mounting: SMD
Case: SO14
Operating temperature: -40...150°C
Kind of package: reel; tape
Supply voltage: 12...20V
Output current: 2.5A
Kind of channel: enhancement
Type of transistor: N-MOSFET
Polarisation: unipolar
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MC74HC393ADR2G mc74hc393a-d.pdf
MC74HC393ADR2G
Виробник: ONSEMI
Category: Counters/dividers
Description: IC: digital; asynchronous counter; Ch: 2; CMOS,TTL; HC; SMD; SO14; HC
Type of integrated circuit: digital
Number of channels: 2
Mounting: SMD
Case: SO14
Operating temperature: -55...125°C
Quiescent current: 160µA
Kind of package: reel; tape
Supply voltage: 2...6V DC
Kind of integrated circuit: asynchronous counter
Technology: CMOS; TTL
Family: HC
Manufacturer series: HC
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MC74HC393ADTR2G MC74HC393A-D.pdf
Виробник: ONSEMI
Category: Counters/dividers
Description: IC: digital; 4-stage,binary ripple counter; Ch: 2; IN: 2; CMOS; HC
Type of integrated circuit: digital
Number of channels: 2
Mounting: SMD
Case: TSSOP14
Operating temperature: -55...125°C
Kind of package: reel; tape
Number of inputs: 2
Supply voltage: 2...6V DC
Kind of integrated circuit: 4-stage; binary ripple counter
Technology: CMOS
Family: HC
Manufacturer series: HC
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1N916B 1n914-d.pdf FAIR-S-A0001232564-1.pdf?t.download=true&u=5oefqw
Виробник: ONSEMI
Category: THT universal diodes
Description: Diode: switching; THT; 100V; 0.3A; bulk; Ifsm: 4A; DO35; 4ns
Type of diode: switching
Mounting: THT
Max. off-state voltage: 100V
Load current: 0.3A
Semiconductor structure: single diode
Features of semiconductor devices: small signal
Kind of package: bulk
Max. forward impulse current: 4A
Case: DO35
Reverse recovery time: 4ns
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MC74VHC1G05DTT1G mc74vhc1g05-d.pdf
MC74VHC1G05DTT1G
+1
Виробник: ONSEMI
Category: Gates, inverters
Description: IC: digital; NOT; Ch: 1; IN: 1; CMOS; SMD; TSSOP5; 2÷5.5VDC; -55÷125°C
Type of integrated circuit: digital
Kind of gate: NOT
Number of channels: single; 1
Number of inputs: 1
Technology: CMOS
Mounting: SMD
Case: TSSOP5
Supply voltage: 2...5.5V DC
Operating temperature: -55...125°C
Kind of package: reel; tape
Quiescent current: 40µA
Kind of output: open drain
Family: VHC
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NTJS4151PT1G ntjs4151p-d.pdf
NTJS4151PT1G
Виробник: ONSEMI
Category: SMD P channel transistors
Description: Transistor: P-MOSFET; unipolar; -20V; -2.4A; 1W
Type of transistor: P-MOSFET
Polarisation: unipolar
Drain-source voltage: -20V
Drain current: -2.4A
Power dissipation: 1W
Case: SC70-6; SC88; SOT363
Gate-source voltage: ±12V
On-state resistance: 60mΩ
Mounting: SMD
Kind of package: reel; tape
Kind of channel: enhancement
на замовлення 160 шт:
термін постачання 21-30 дні (днів)
Кількість Ціна
21+21.30 грн
30+14.17 грн
50+11.29 грн
100+10.30 грн
Мінімальне замовлення: 21
В кошику  од. на суму  грн.
MC14490DWG MC14490DWG.pdf
MC14490DWG
Виробник: ONSEMI
Category: Other logic integrated circuits
Description: IC: digital; contact bounce eliminator; CMOS; 3÷18VDC; SMD; SO16
Type of integrated circuit: digital
Kind of integrated circuit: contact bounce eliminator
Technology: CMOS
Supply voltage: 3...18V DC
Mounting: SMD
Case: SO16
Operating temperature: -40...85°C
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MC14490DWR2G MC14490-D.pdf
MC14490DWR2G
Виробник: ONSEMI
Category: Other logic integrated circuits
Description: IC: digital; contact bounce eliminator,hex; Ch: 1; CMOS; 3÷18VDC
Type of integrated circuit: digital
Kind of integrated circuit: contact bounce eliminator; hex
Number of channels: 1
Technology: CMOS
Supply voltage: 3...18V DC
Mounting: SMD
Case: SOIC16
Operating temperature: -55...125°C
Kind of package: reel; tape
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MMBFJ177 MMBFJ17X-DTE.pdf
Виробник: ONSEMI
Category: SMD P channel transistors
Description: Transistor: P-JFET; unipolar; 1.5mA; 0.225W; SOT23; Igt: 50mA
Type of transistor: P-JFET
Polarisation: unipolar
Drain current: 1.5mA
Power dissipation: 0.225W
Case: SOT23
On-state resistance: 300Ω
Mounting: SMD
Kind of package: reel; tape
Gate current: 50mA
Gate-source voltage: 30V
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MOC3042M MOC3042M.pdf
MOC3042M
Виробник: ONSEMI
Category: Optotriacs
Description: Optotriac; 4.17kV; triac; DIP6; Ch: 1; MOC304XM; 1kV/μs
Type of optocoupler: optotriac
Insulation voltage: 4.17kV
Kind of output: triac
Case: DIP6
Mounting: THT
Number of channels: 1
Slew rate: 1kV/μs
Manufacturer series: MOC304XM
на замовлення 1000 шт:
термін постачання 21-30 дні (днів)
Кількість Ціна
7+64.78 грн
12+35.76 грн
25+30.57 грн
50+27.44 грн
100+24.72 грн
500+24.22 грн
Мінімальне замовлення: 7
В кошику  од. на суму  грн.
MOC3042SM MOC3040_41_42_43.pdf MOC3043M-D.PDF
Виробник: ONSEMI
Category: Optotriacs
Description: Optotriac; 4.17kV; Uout: 400V; triac; SMT6; Ch: 1; MOC304XM; tube
Type of optocoupler: optotriac
Insulation voltage: 4.17kV
Kind of output: triac
Case: SMT6
Max. off-state voltage: 6V
Trigger current: 10mA
Mounting: SMD
Number of channels: 1
Kind of package: tube
Output voltage: 400V
Manufacturer series: MOC304XM
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MOC3042SR2M MOC3043M-D.PDF
Виробник: ONSEMI
Category: Optotriacs
Description: Optotriac; 4.17kV; Uout: 400V; triac; SMT6; Ch: 1; MOC304XM
Type of optocoupler: optotriac
Insulation voltage: 4.17kV
Kind of output: triac
Case: SMT6
Max. off-state voltage: 6V
Trigger current: 10mA
Mounting: SMD
Number of channels: 1
Kind of package: reel; tape
Output voltage: 400V
Manufacturer series: MOC304XM
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MOC3042SR2VM MOC3043M-D.PDF
Виробник: ONSEMI
Category: Optotriacs
Description: Optotriac; 4.17kV; Uout: 400V; triac; SMT6; Ch: 1; MOC304XM
Type of optocoupler: optotriac
Insulation voltage: 4.17kV
Kind of output: triac
Case: SMT6
Max. off-state voltage: 6V
Trigger current: 10mA
Mounting: SMD
Number of channels: 1
Conform to the norm: VDE
Kind of package: reel; tape
Output voltage: 400V
Manufacturer series: MOC304XM
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MOC3042SVM MOC3043M-D.PDF
Виробник: ONSEMI
Category: Optotriacs
Description: Optotriac; 4.17kV; Uout: 400V; triac; SMT6; Ch: 1; MOC304XM; tube
Type of optocoupler: optotriac
Insulation voltage: 4.17kV
Kind of output: triac
Case: SMT6
Max. off-state voltage: 6V
Trigger current: 10mA
Mounting: SMD
Number of channels: 1
Conform to the norm: VDE
Kind of package: tube
Output voltage: 400V
Manufacturer series: MOC304XM
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MOC3042TVM MOC3043M-D.PDF moc3043m-d.pdf
Виробник: ONSEMI
Category: Optotriacs
Description: Optotriac; 4.17kV; Uout: 400V; triac; DIP6; Ch: 1; MOC304XM; tube
Type of optocoupler: optotriac
Insulation voltage: 4.17kV
Kind of output: triac
Case: DIP6
Max. off-state voltage: 6V
Trigger current: 10mA
Mounting: THT
Number of channels: 1
Conform to the norm: VDE
Kind of package: tube
Output voltage: 400V
Manufacturer series: MOC304XM
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MOC3042VM MOC3043M-D.PDF
Виробник: ONSEMI
Category: Optotriacs
Description: Optotriac; 4.17kV; Uout: 400V; triac; DIP6; Ch: 1; MOC304XM; tube
Type of optocoupler: optotriac
Insulation voltage: 4.17kV
Kind of output: triac
Case: DIP6
Max. off-state voltage: 6V
Trigger current: 10mA
Mounting: THT
Number of channels: 1
Conform to the norm: VDE
Kind of package: tube
Output voltage: 400V
Manufacturer series: MOC304XM
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FDA16N50-F109 FDA16N50_F109.PDF
FDA16N50-F109
Виробник: ONSEMI
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 500V; 9.9A; Idm: 66A; 205W; TO3PN
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 500V
Drain current: 9.9A
Pulsed drain current: 66A
Power dissipation: 205W
Case: TO3PN
Gate-source voltage: ±30V
On-state resistance: 0.38Ω
Mounting: THT
Gate charge: 45nC
Kind of package: tube
Kind of channel: enhancement
Technology: UniFET™
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FDA16N50LDTU FAIR-S-A0002365536-1.pdf?t.download=true&u=5oefqw fda16n50ldtu-d.pdf
Виробник: ONSEMI
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 500V; 3.3A; Idm: 66A; 205W; TO3PN
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 500V
Drain current: 3.3A
Pulsed drain current: 66A
Power dissipation: 205W
Case: TO3PN
Gate-source voltage: ±30V
On-state resistance: 0.38Ω
Mounting: THT
Gate charge: 45nC
Kind of package: tube
Kind of channel: enhancement
Technology: DMOS; UniFET™
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FQAF16N50 FQAF16N50.pdf
FQAF16N50
Виробник: ONSEMI
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 500V; 7.15A; 110W; TO3PF
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 500V
Drain current: 7.15A
Power dissipation: 110W
Case: TO3PF
Gate-source voltage: ±30V
On-state resistance: 0.32Ω
Mounting: THT
Gate charge: 75nC
Kind of package: tube
Kind of channel: enhancement
Technology: QFET®
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1N4934RLG 1n4933-d.pdf
Виробник: ONSEMI
Category: THT universal diodes
Description: Diode: rectifying; THT; 100V; 1A; reel,tape; Ifsm: 30A; DO41; 300ns
Type of diode: rectifying
Mounting: THT
Max. off-state voltage: 100V
Load current: 1A
Semiconductor structure: single diode
Kind of package: reel; tape
Max. forward impulse current: 30A
Case: DO41
Reverse recovery time: 300ns
Features of semiconductor devices: fast switching
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1N4934G 1N4933_7.PDF
Виробник: ONSEMI
Category: THT universal diodes
Description: Diode: rectifying; THT; 100V; 1A; bulk; Ifsm: 30A; CASE59-10,DO41
Type of diode: rectifying
Mounting: THT
Max. off-state voltage: 100V
Load current: 1A
Semiconductor structure: single diode
Kind of package: bulk
Max. forward impulse current: 30A
Case: CASE59-10; DO41
Max. forward voltage: 1.2V
Reverse recovery time: 200ns
Features of semiconductor devices: fast switching
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MBR2035CT MBR2060CT-D.pdf MBR2035-2045CT(-1)%20MBRB2035-2045CT%20N0186%20REV.A.pdf vs-mbr20cthn3.pdf MBR2035CT%20SERIES_M2104.pdf
Виробник: ONSEMI
Category: THT Schottky diodes
Description: Diode: Schottky rectifying; THT; 35V; 10Ax2; TO220AB; Ufmax: 0.95V
Type of diode: Schottky rectifying
Mounting: THT
Max. off-state voltage: 35V
Load current: 10A x2
Semiconductor structure: common cathode; double
Case: TO220AB
Max. forward voltage: 0.95V
Kind of package: tube
Max. forward impulse current: 150A
Max. load current: 20A
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MBR2535CTG mbr2535ct-d.pdf
Виробник: ONSEMI
Category: THT Schottky diodes
Description: Diode: Schottky rectifying; THT; 35V; 15Ax2; TO220AB; Ufmax: 0.72V
Type of diode: Schottky rectifying
Mounting: THT
Max. off-state voltage: 35V
Load current: 15A x2
Semiconductor structure: common cathode; double
Case: TO220AB
Max. forward voltage: 0.72V
Kind of package: tube
Max. forward impulse current: 150A
Max. load current: 30A
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MBR2535CTLG mbr2535ctl-d.pdf
Виробник: ONSEMI
Category: THT Schottky diodes
Description: Diode: Schottky rectifying; THT; 35V; 12.5Ax2; TO220AB; tube
Type of diode: Schottky rectifying
Mounting: THT
Max. off-state voltage: 35V
Load current: 12.5A x2
Semiconductor structure: common cathode; double
Case: TO220AB
Max. forward voltage: 0.41V
Kind of package: tube
Max. forward impulse current: 150A
Max. load current: 25A
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ISL9V5036S3ST ISL9V5036.pdf
ISL9V5036S3ST
Виробник: ONSEMI
Category: SMD IGBT transistors
Description: Transistor: IGBT; 390V; 31A; 250W; D2PAK; Features: logic level
Type of transistor: IGBT
Collector-emitter voltage: 390V
Collector current: 31A
Power dissipation: 250W
Case: D2PAK
Mounting: SMD
Gate charge: 32nC
Kind of package: reel; tape
Features of semiconductor devices: logic level
Application: ignition systems
Version: ESD
Gate-emitter voltage: ±10V
на замовлення 693 шт:
термін постачання 21-30 дні (днів)
Кількість Ціна
2+354.94 грн
5+275.21 грн
10+244.72 грн
50+201.05 грн
Мінімальне замовлення: 2
В кошику  од. на суму  грн.
FGB3040G2-F085 fgi3040g2_f085-d.pdf
FGB3040G2-F085
Виробник: ONSEMI
Category: SMD IGBT transistors
Description: Transistor: IGBT; 400V; 25.6A; 150W; D2PAK; Features: logic level
Type of transistor: IGBT
Collector-emitter voltage: 400V
Collector current: 25.6A
Power dissipation: 150W
Case: D2PAK
Mounting: SMD
Gate charge: 21nC
Kind of package: reel; tape
Features of semiconductor devices: logic level
Application: ignition systems
Version: ESD
Gate-emitter voltage: ±10V
на замовлення 717 шт:
термін постачання 21-30 дні (днів)
Кількість Ціна
3+201.43 грн
10+168.09 грн
100+156.55 грн
250+155.73 грн
Мінімальне замовлення: 3
В кошику  од. на суму  грн.
ISL9V5045S3ST-F085 isl9v5045s-f085-d.pdf
Виробник: ONSEMI
Category: SMD IGBT transistors
Description: Transistor: IGBT; 450V; 43A; 300W; D2PAK; Features: logic level
Type of transistor: IGBT
Collector-emitter voltage: 450V
Collector current: 43A
Power dissipation: 300W
Case: D2PAK
Mounting: SMD
Gate charge: 32nC
Kind of package: reel; tape
Features of semiconductor devices: logic level
Application: ignition systems
Version: ESD
Gate-emitter voltage: ±10V
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FGB3245G2-F085 fgd3245g2-f085-d.pdf
Виробник: ONSEMI
Category: SMD IGBT transistors
Description: Transistor: IGBT; 450V; 27A; 150W; D2PAK; Features: logic level
Type of transistor: IGBT
Collector-emitter voltage: 450V
Collector current: 27A
Power dissipation: 150W
Case: D2PAK
Mounting: SMD
Gate charge: 23nC
Kind of package: reel; tape
Features of semiconductor devices: logic level
Application: ignition systems
Version: ESD
Gate-emitter voltage: ±10V
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FGD3245G2-F085C fgd3245g2-f085c-d.pdf
Виробник: ONSEMI
Category: SMD IGBT transistors
Description: Transistor: IGBT; 450V; 23A; 150W; DPAK; Features: logic level; ESD
Type of transistor: IGBT
Collector-emitter voltage: 450V
Collector current: 23A
Power dissipation: 150W
Case: DPAK
Gate-emitter voltage: ±10V
Mounting: SMD
Gate charge: 23nC
Kind of package: reel; tape
Features of semiconductor devices: logic level
Application: ignition systems
Version: ESD
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FGD3440G2-F085 FG%28B%2CD%2CP%293440G2_F085.pdf
Виробник: ONSEMI
Category: SMD IGBT transistors
Description: Transistor: IGBT; 400V; 25A; 166W; DPAK; Features: logic level; ESD
Type of transistor: IGBT
Collector-emitter voltage: 400V
Collector current: 25A
Power dissipation: 166W
Case: DPAK
Gate-emitter voltage: ±10V
Mounting: SMD
Gate charge: 24nC
Kind of package: reel; tape
Features of semiconductor devices: logic level
Application: ignition systems
Version: ESD
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ISL9V2040D3ST ISL9V2040D-F085-D.pdf
Виробник: ONSEMI
Category: SMD IGBT transistors
Description: Transistor: IGBT; 400V; 10A; 130W; DPAK; Features: logic level; ESD
Type of transistor: IGBT
Collector-emitter voltage: 400V
Collector current: 10A
Power dissipation: 130W
Case: DPAK
Mounting: SMD
Gate charge: 12nC
Kind of package: reel; tape
Features of semiconductor devices: logic level
Application: ignition systems
Version: ESD
Gate-emitter voltage: ±10V
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ISL9V5036P3-F085 isl9v5036s3st-d.pdf
Виробник: ONSEMI
Category: THT IGBT transistors
Description: Transistor: IGBT; 360V; 31A; 250W; TO220-3; Features: logic level
Type of transistor: IGBT
Collector-emitter voltage: 360V
Collector current: 31A
Power dissipation: 250W
Case: TO220-3
Mounting: THT
Gate charge: 32nC
Kind of package: tube
Features of semiconductor devices: logic level
Application: ignition systems
Version: ESD
Gate-emitter voltage: ±10V
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ISL9V3040D3ST-F085C isl9v3040-f085c-d.pdf
Виробник: ONSEMI
Category: SMD IGBT transistors
Description: Transistor: IGBT; 400V; 17A; 150W; DPAK; Features: logic level; ESD
Type of transistor: IGBT
Collector-emitter voltage: 400V
Collector current: 17A
Power dissipation: 150W
Case: DPAK
Gate-emitter voltage: ±10V
Mounting: SMD
Gate charge: 17nC
Kind of package: reel; tape
Features of semiconductor devices: logic level
Application: ignition systems
Version: ESD
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FGD3050G2 fgd3050g2-d.pdf
Виробник: ONSEMI
Category: SMD IGBT transistors
Description: Transistor: IGBT; 500V; 27A; 150W; DPAK; Features: logic level; ESD
Type of transistor: IGBT
Collector-emitter voltage: 500V
Collector current: 27A
Power dissipation: 150W
Case: DPAK
Gate-emitter voltage: ±10V
Mounting: SMD
Gate charge: 22nC
Kind of package: reel; tape
Features of semiconductor devices: logic level
Application: ignition systems
Version: ESD
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ISL9V5045S3ST-F085C isl9v5045s3st-f085c-d.pdf
Виробник: ONSEMI
Category: SMD IGBT transistors
Description: Transistor: IGBT; 450V; 43A; 300W; D2PAK; Features: logic level
Type of transistor: IGBT
Collector-emitter voltage: 450V
Collector current: 43A
Power dissipation: 300W
Case: D2PAK
Mounting: SMD
Gate charge: 32nC
Kind of package: reel; tape
Features of semiconductor devices: logic level
Application: ignition systems
Version: ESD
Gate-emitter voltage: ±10V
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FGP3440G2-F085 FGx3440G2_F085.PDF
FGP3440G2-F085
Виробник: ONSEMI
Category: THT IGBT transistors
Description: Transistor: IGBT; 400V; 25A; 166W; TO220-3; Features: logic level
Type of transistor: IGBT
Collector-emitter voltage: 400V
Collector current: 25A
Power dissipation: 166W
Case: TO220-3
Mounting: THT
Kind of package: tube
Features of semiconductor devices: logic level
Application: ignition systems
Version: ESD
Gate-emitter voltage: ±10V
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ISL9V3040D3ST ISL9V3040P3-D.PDF
Виробник: ONSEMI
Category: SMD IGBT transistors
Description: Transistor: IGBT; 400V; 17A; 150W; DPAK; Features: logic level; ESD
Type of transistor: IGBT
Collector-emitter voltage: 400V
Collector current: 17A
Power dissipation: 150W
Case: DPAK
Gate-emitter voltage: ±10V
Mounting: SMD
Gate charge: 17nC
Kind of package: reel; tape
Features of semiconductor devices: logic level
Application: ignition systems
Version: ESD
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ISL9V3040S3ST ISL9V3040P3-D.PDF
Виробник: ONSEMI
Category: SMD IGBT transistors
Description: Transistor: IGBT; 430V; 17A; 150W; D2PAK; Features: logic level
Type of transistor: IGBT
Collector-emitter voltage: 430V
Collector current: 17A
Power dissipation: 150W
Case: D2PAK
Mounting: SMD
Gate charge: 17nC
Kind of package: reel; tape
Features of semiconductor devices: logic level
Application: ignition systems
Version: ESD
Gate-emitter voltage: ±10V
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ISL9V3040S3ST-F085C isl9v3040-f085c-d.pdf
Виробник: ONSEMI
Category: SMD IGBT transistors
Description: Transistor: IGBT; 400V; 17A; 150W; D2PAK; Features: logic level
Type of transistor: IGBT
Collector-emitter voltage: 400V
Collector current: 17A
Power dissipation: 150W
Case: D2PAK
Mounting: SMD
Gate charge: 17nC
Kind of package: reel; tape
Features of semiconductor devices: logic level
Application: ignition systems
Version: ESD
Gate-emitter voltage: ±10V
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FGD3040G2-F085V fgd3040g2-f085v-d.pdf
Виробник: ONSEMI
Category: SMD IGBT transistors
Description: Transistor: IGBT; 400V; 25.6A; 150W; DPAK; Features: logic level
Type of transistor: IGBT
Collector-emitter voltage: 400V
Collector current: 25.6A
Power dissipation: 150W
Case: DPAK
Gate-emitter voltage: ±10V
Mounting: SMD
Gate charge: 21nC
Kind of package: reel; tape
Features of semiconductor devices: logic level
Application: ignition systems
Version: ESD
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FGD3040G2-F085 fgi3040g2_f085-d.pdf
Виробник: ONSEMI
Category: SMD IGBT transistors
Description: Transistor: IGBT; 400V; 25.6A; 150W; DPAK; Features: logic level
Type of transistor: IGBT
Collector-emitter voltage: 400V
Collector current: 25.6A
Power dissipation: 150W
Case: DPAK
Gate-emitter voltage: ±10V
Mounting: SMD
Gate charge: 21nC
Kind of package: reel; tape
Features of semiconductor devices: logic level
Application: ignition systems
Version: ESD
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FGB3040G2-F085C fgx3040g2-f085c-d.pdf
Виробник: ONSEMI
Category: SMD IGBT transistors
Description: Transistor: IGBT; 400V; 25.6A; 150W; D2PAK; Features: logic level
Type of transistor: IGBT
Collector-emitter voltage: 400V
Collector current: 25.6A
Power dissipation: 150W
Case: D2PAK
Mounting: SMD
Gate charge: 21nC
Kind of package: reel; tape
Features of semiconductor devices: logic level
Application: ignition systems
Version: ESD
Gate-emitter voltage: ±10V
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FGD2736G3-F085V FGD2736G3-F085V.PDF
Виробник: ONSEMI
Category: SMD IGBT transistors
Description: Transistor: IGBT; 360V; 24.3A; 150W; DPAK; Features: logic level
Type of transistor: IGBT
Collector-emitter voltage: 360V
Collector current: 24.3A
Power dissipation: 150W
Case: DPAK
Mounting: SMD
Gate charge: 18nC
Kind of package: reel; tape
Features of semiconductor devices: logic level
Application: ignition systems
Version: ESD
Gate-emitter voltage: ±10V
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FGD3040G2-F085C fgx3040g2-f085c-d.pdf
Виробник: ONSEMI
Category: SMD IGBT transistors
Description: Transistor: IGBT; 400V; 25.6A; 150W; DPAK; Features: logic level
Type of transistor: IGBT
Collector-emitter voltage: 400V
Collector current: 25.6A
Power dissipation: 150W
Case: DPAK
Gate-emitter voltage: ±10V
Mounting: SMD
Gate charge: 21nC
Kind of package: reel; tape
Features of semiconductor devices: logic level
Application: ignition systems
Version: ESD
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US2JA us2aa-d.pdf
Виробник: ONSEMI
Category: SMD universal diodes
Description: Diode: rectifying; SMD; 600V; 1.5A; 75ns; SMA; Ufmax: 1.7V; reel,tape
Type of diode: rectifying
Mounting: SMD
Max. off-state voltage: 0.6kV
Load current: 1.5A
Reverse recovery time: 75ns
Semiconductor structure: single diode
Case: SMA
Max. forward voltage: 1.7V
Kind of package: reel; tape
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NRVUS2JA us2aa-d.pdf
NRVUS2JA
Виробник: ONSEMI
Category: SMD universal diodes
Description: Diode: rectifying; SMD; 600V; 1.5A; 75ns; SMA; Ufmax: 1.7V; Ifsm: 50A
Type of diode: rectifying
Mounting: SMD
Max. off-state voltage: 0.6kV
Load current: 1.5A
Reverse recovery time: 75ns
Semiconductor structure: single diode
Case: SMA
Max. forward voltage: 1.7V
Max. forward impulse current: 50A
Kind of package: reel; tape
Application: automotive industry
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NCP5623BMUTBG
Виробник: ONSEMI
Category: LED drivers
Description: IC: driver; LED driver; I2C; LLGA12; 90mA; 4.4÷5.7V; Ch: 3; PWM
Mounting: SMD
Supply voltage: 2.7...5.5V DC
Operating temperature: -40...85°C
Number of channels: 3
Application: for RGB power LED applications
Case: LLGA12
Integrated circuit features: PWM
Output current: 90mA
Output voltage: 4.4...5.7V
Type of integrated circuit: driver
Interface: I2C
Kind of integrated circuit: LED driver
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2N6520TA 2n6515-d.pdf
2N6520TA
Виробник: ONSEMI
Category: PNP THT transistors
Description: Transistor: PNP; bipolar; 350V; 0.5A; 0.625W; TO92 Formed
Type of transistor: PNP
Polarisation: bipolar
Power dissipation: 0.625W
Case: TO92 Formed
Mounting: THT
Kind of package: Ammo Pack
Collector current: 0.5A
Current gain: 30...200
Frequency: 40...200MHz
Collector-emitter voltage: 350V
на замовлення 607 шт:
термін постачання 21-30 дні (днів)
Кількість Ціна
24+18.63 грн
51+8.16 грн
100+6.00 грн
500+4.79 грн
Мінімальне замовлення: 24
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74AC14SC description 74AC14SC.pdf
74AC14SC
Виробник: ONSEMI
Category: Gates, inverters
Description: IC: digital; NOT; Ch: 6; IN: 1; SMD; SO14; 2÷6VDC; -40÷85°C; tube; 40uA
Mounting: SMD
Number of channels: hex; 6
Case: SO14
Kind of input: with Schmitt trigger
Operating temperature: -40...85°C
Quiescent current: 40µA
Number of inputs: 1
Supply voltage: 2...6V DC
Family: AC
Kind of package: tube
Type of integrated circuit: digital
Kind of gate: NOT
на замовлення 654 шт:
термін постачання 21-30 дні (днів)
Кількість Ціна
12+38.16 грн
17+24.55 грн
25+24.22 грн
Мінімальне замовлення: 12
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