| Фото | Назва | Виробник | Інформація |
Доступність |
Ціна |
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MC14018BDG | ONSEMI |
Category: Counters/dividersDescription: IC: digital; divide by N,counter; CMOS; SMD; SOIC16; HEF4000B; tube Operating temperature: -55...125°C Type of integrated circuit: digital Family: HEF4000B Mounting: SMD Case: SOIC16 Supply voltage: 3...18V DC Kind of package: tube Technology: CMOS Kind of integrated circuit: counter; divide by N |
на замовлення 34 шт: термін постачання 21-30 дні (днів) |
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MC14018BDR2G | ONSEMI |
Category: Counters/dividersDescription: IC: digital; divide by N,counter; CMOS; SMD; SOIC16; HEF4000B Operating temperature: -55...125°C Type of integrated circuit: digital Family: HEF4000B Mounting: SMD Case: SOIC16 Supply voltage: 3...18V DC Kind of package: reel; tape Technology: CMOS Kind of integrated circuit: counter; divide by N |
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В кошику од. на суму грн. | ||||||||||||||||
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MC14011UBDG | ONSEMI |
Category: Gates, invertersDescription: IC: digital; NAND; Ch: 4; IN: 2; CMOS; SMD; SO14; 3÷18VDC; -55÷125°C Type of integrated circuit: digital Kind of gate: NAND Number of channels: quad; 4 Number of inputs: 2 Technology: CMOS Mounting: SMD Case: SO14 Supply voltage: 3...18V DC Operating temperature: -55...125°C Kind of package: tube Family: HEF4000B Delay time: 100ns |
на замовлення 539 шт: термін постачання 21-30 дні (днів) |
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MC14011BDR2G | ONSEMI |
Category: Gates, invertersDescription: IC: digital; NAND; Ch: 4; IN: 2; CMOS; SMD; SO14; 3÷18VDC; -55÷125°C Type of integrated circuit: digital Kind of gate: NAND Number of channels: quad; 4 Number of inputs: 2 Technology: CMOS Mounting: SMD Case: SO14 Supply voltage: 3...18V DC Operating temperature: -55...125°C Kind of package: reel; tape Family: HEF4000B Delay time: 100ns |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||||||||||
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MC14011UBDR2G | ONSEMI |
Category: Gates, invertersDescription: IC: digital; NAND; Ch: 4; IN: 2; CMOS; SMD; SO14; 3÷18VDC; -55÷125°C Type of integrated circuit: digital Kind of gate: NAND Number of channels: quad; 4 Number of inputs: 2 Technology: CMOS Mounting: SMD Case: SO14 Supply voltage: 3...18V DC Operating temperature: -55...125°C Kind of package: reel; tape Family: HEF4000B Delay time: 100ns |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||||||||||
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FQB33N10LTM | ONSEMI |
Category: SMD N channel transistorsDescription: Transistor: N-MOSFET; unipolar; 100V; 23A; Idm: 132A; 127W; D2PAK Type of transistor: N-MOSFET Polarisation: unipolar Drain-source voltage: 100V Drain current: 23A Case: D2PAK Gate-source voltage: ±20V Mounting: SMD Kind of package: reel; tape Kind of channel: enhancement Gate charge: 40nC Power dissipation: 127W Pulsed drain current: 132A Technology: QFET® On-state resistance: 55mΩ |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||||||||||
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FQB33N10TM | ONSEMI |
Category: SMD N channel transistorsDescription: Transistor: N-MOSFET; unipolar; 100V; 23A; 127W; D2PAK Type of transistor: N-MOSFET Polarisation: unipolar Drain-source voltage: 100V Drain current: 23A Case: D2PAK Gate-source voltage: ±25V Mounting: SMD Kind of package: reel; tape Kind of channel: enhancement Gate charge: 51nC Power dissipation: 127W Technology: QFET® On-state resistance: 52mΩ |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||||||||||
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FOD3150 | ONSEMI |
Category: Optocouplers - analog outputDescription: Optocoupler; THT; Ch: 1; OUT: transistor; Uinsul: 5kV; DIP8; 50kV/μs Kind of output: transistor Type of optocoupler: optocoupler Mounting: THT Output voltage: 0...35V Turn-off time: 60ns Turn-on time: 60ns Number of channels: 1 Max. off-state voltage: 5V Insulation voltage: 5kV Case: DIP8 Slew rate: 50kV/μs |
на замовлення 383 шт: термін постачання 21-30 дні (днів) |
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| FDC642P | ONSEMI |
Category: SMD P channel transistorsDescription: Transistor: P-MOSFET; unipolar; -20V; -4A; 1.2W; SuperSOT-6 Drain current: -4A On-state resistance: 0.105Ω Power dissipation: 1.2W Gate-source voltage: ±8V Kind of channel: enhancement Type of transistor: P-MOSFET Kind of package: reel; tape Mounting: SMD Case: SuperSOT-6 Polarisation: unipolar Drain-source voltage: -20V |
товару немає в наявності |
В кошику од. на суму грн. | |||||||||||||||||
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NSR20F30NXT5G | ONSEMI |
Category: SMD Schottky diodesDescription: Diode: Schottky rectifying; DSN0603-2; SMD; 30V; 2A; reel,tape Kind of package: reel; tape Type of diode: Schottky rectifying Semiconductor structure: single diode Mounting: SMD Load current: 2A Max. forward voltage: 0.48V Max. off-state voltage: 30V Max. load current: 4A Max. forward impulse current: 28A Case: DSN0603-2 |
на замовлення 966 шт: термін постачання 21-30 дні (днів) |
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LM285D-2.5R2G | ONSEMI |
Category: Reference voltage sources - circuitsDescription: IC: voltage reference source; 2.5V; ±1.5%; SO8; reel,tape; 20mA Type of integrated circuit: voltage reference source Reference voltage: 2.5V Tolerance: ±1.5% Mounting: SMD Case: SO8 Operating temperature: -40...85°C Kind of package: reel; tape Maximum output current: 20mA |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||||||||||
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KSD5041RTA | ONSEMI |
Category: NPN THT transistorsDescription: Transistor: NPN; bipolar; 20V; 5A; 0.75W; TO92 Case: TO92 Type of transistor: NPN Mounting: THT Power dissipation: 0.75W Collector current: 5A Collector-emitter voltage: 20V Current gain: 340...600 Frequency: 150MHz Kind of package: Ammo Pack Polarisation: bipolar |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||||||||||
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KSD1408YTU | ONSEMI |
Category: NPN THT transistorsDescription: Transistor: NPN; bipolar; 80V; 4A; 25W; TO220FP Case: TO220FP Mounting: THT Power dissipation: 25W Collector current: 4A Type of transistor: NPN Collector-emitter voltage: 80V Polarisation: bipolar Current gain: 120...240 Kind of package: tube Frequency: 8MHz |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||||||||||
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KSD560YTU | ONSEMI |
Category: NPN THT Darlington transistorsDescription: Transistor: NPN; bipolar; Darlington; 100V; 5A; 1.5W; TO220AB Case: TO220AB Kind of transistor: Darlington Type of transistor: NPN Mounting: THT Power dissipation: 1.5W Collector current: 5A Collector-emitter voltage: 100V Kind of package: tube Polarisation: bipolar |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||||||||||
| UJ3D1210KSD | ONSEMI |
Category: THT Schottky diodesDescription: Diode: Schottky rectifying; SiC; THT; 1.2kV; 5A; TO247-3; 13W; tube Case: TO247-3 Type of diode: Schottky rectifying Mounting: THT Technology: SiC Power dissipation: 13W Max. forward voltage: 1200V Load current: 5A Max. forward impulse current: 63A Max. off-state voltage: 1.2kV Kind of package: tube Semiconductor structure: single diode |
товару немає в наявності |
В кошику од. на суму грн. | |||||||||||||||||
| UJ3D06560KSD | ONSEMI |
Category: THT Schottky diodesDescription: Diode: Schottky rectifying; SiC; THT; 650V; 30A; TO247-3; tube Case: TO247-3 Type of diode: Schottky rectifying Mounting: THT Technology: SiC Max. forward voltage: 650V Load current: 30A Max. load current: 107.2A Max. forward impulse current: 1.25kA Max. off-state voltage: 650V Kind of package: tube Semiconductor structure: common cathode; double |
товару немає в наявності |
В кошику од. на суму грн. | |||||||||||||||||
| SZ1SMB5931BT3G | ONSEMI |
Category: SMD Zener diodesDescription: Diode: Zener; 3W; 18V; SMD; reel,tape; SMB; single diode Type of diode: Zener Power dissipation: 3W Zener voltage: 18V Mounting: SMD Tolerance: ±5% Kind of package: reel; tape Case: SMB Semiconductor structure: single diode Manufacturer series: 1SMB59xxBT3G Application: automotive industry |
товару немає в наявності |
В кошику од. на суму грн. | |||||||||||||||||
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NCP3420DR2G | ONSEMI |
Category: MOSFET/IGBT driversDescription: IC: driver; H-bridge; high-side,low-side,gate driver; SO8 Type of integrated circuit: driver Topology: H-bridge Kind of integrated circuit: gate driver; high-side; low-side Case: SO8 Supply voltage: 4.6...13.2V DC Mounting: SMD Operating temperature: 0...85°C |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||||||||||
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1N4148WS | ONSEMI |
Category: SMD universal diodesDescription: Diode: switching; SMD; 75V; 0.15A; 4ns; SOD323F; Ufmax: 1V; Ifsm: 1A Type of diode: switching Mounting: SMD Max. off-state voltage: 75V Load current: 0.15A Semiconductor structure: single diode Features of semiconductor devices: small signal Kind of package: reel; tape Max. forward impulse current: 1A Case: SOD323F Max. forward voltage: 1V Reverse recovery time: 4ns Power dissipation: 0.2W Capacitance: 4pF |
на замовлення 1510 шт: термін постачання 21-30 дні (днів) |
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| FDP027N08B-F102 | ONSEMI |
Category: THT N channel transistorsDescription: Transistor: N-MOSFET; unipolar; 80V; 223A; Idm: 892A; 246W; TO220-3 Type of transistor: N-MOSFET Polarisation: unipolar Drain-source voltage: 80V Drain current: 223A Pulsed drain current: 892A Power dissipation: 246W Case: TO220-3 Gate-source voltage: ±20V On-state resistance: 2.7mΩ Mounting: THT Gate charge: 137nC Kind of package: tube Kind of channel: enhancement |
товару немає в наявності |
В кошику од. на суму грн. | |||||||||||||||||
| NVMFS027N10MCLT1G | ONSEMI |
Category: SMD N channel transistorsDescription: Transistor: N-MOSFET; unipolar; 100V; 28A; Idm: 137A; 23W; DFN5 Type of transistor: N-MOSFET Polarisation: unipolar Drain-source voltage: 100V Drain current: 28A Pulsed drain current: 137A Power dissipation: 23W Case: DFN5 Gate-source voltage: ±20V On-state resistance: 26mΩ Mounting: SMD Gate charge: 11.5nC Kind of package: reel; tape Kind of channel: enhancement |
товару немає в наявності |
В кошику од. на суму грн. | |||||||||||||||||
| NVTFWS027N10MCLTAG | ONSEMI |
Category: SMD N channel transistorsDescription: Transistor: N-MOSFET; unipolar; 100V; 28A; Idm: 119A; 23W; WDFN8 Type of transistor: N-MOSFET Polarisation: unipolar Drain-source voltage: 100V Drain current: 28A Pulsed drain current: 119A Power dissipation: 23W Case: WDFN8 Gate-source voltage: ±20V On-state resistance: 26mΩ Mounting: SMD Gate charge: 11.5nC Kind of package: reel; tape Kind of channel: enhancement |
товару немає в наявності |
В кошику од. на суму грн. | |||||||||||||||||
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FDS4480 | ONSEMI |
Category: SMD N channel transistorsDescription: Transistor: N-MOSFET; unipolar; 40V; 10.8A; Idm: 45A; 2.5W; SO8 Type of transistor: N-MOSFET Polarisation: unipolar Case: SO8 Mounting: SMD Kind of package: reel; tape Power dissipation: 2.5W On-state resistance: 21mΩ Drain current: 10.8A Drain-source voltage: 40V Pulsed drain current: 45A Gate charge: 41nC Technology: PowerTrench® Kind of channel: enhancement |
на замовлення 2328 шт: термін постачання 21-30 дні (днів) |
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MMBT589LT1G | ONSEMI |
Category: PNP SMD transistorsDescription: Transistor: PNP; bipolar; 30V; 1A; 0.31/0.71W; SOT23,TO236AB Case: SOT23; TO236AB Mounting: SMD Kind of package: reel; tape Collector current: 1A Power dissipation: 0.31/0.71W Collector-emitter voltage: 30V Current gain: 100...300 Frequency: 100MHz Polarisation: bipolar Type of transistor: PNP |
на замовлення 1521 шт: термін постачання 21-30 дні (днів) |
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1N5339BRLG | ONSEMI |
Category: THT Zener diodesDescription: Diode: Zener; 5W; 5.6V; reel,tape; CASE017AA; single diode; 1uA Type of diode: Zener Power dissipation: 5W Zener voltage: 5.6V Kind of package: reel; tape Case: CASE017AA Mounting: THT Tolerance: ±5% Semiconductor structure: single diode Leakage current: 1µA Manufacturer series: 1N53xxB |
на замовлення 3950 шт: термін постачання 21-30 дні (днів) |
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| D-STPR-GEVK | ONSEMI |
Category: Development kits - othersDescription: Expansion board; prototype board; Comp: AMIS30543 Interface: I2C; I2C - Slave; SPI Kit contents: prototype board Kind of connector: pin strips; screw Components: AMIS30543 Type of accessories for development kits: expansion board development kits accessories features: Arduino Shield compatible; stepper motor driver |
товару немає в наявності |
В кошику од. на суму грн. | |||||||||||||||||
| FDB0170N607L | ONSEMI |
Category: SMD N channel transistorsDescription: Transistor: N-MOSFET; unipolar; 60V; 300A; Idm: 1620A; 250W; D2PAK-7 Type of transistor: N-MOSFET Polarisation: unipolar Drain-source voltage: 60V Drain current: 300A Pulsed drain current: 1620A Power dissipation: 250W Case: D2PAK-7 Gate-source voltage: ±20V On-state resistance: 1.4mΩ Mounting: SMD Gate charge: 173nC Kind of package: reel; tape Kind of channel: enhancement |
товару немає в наявності |
В кошику од. на суму грн. | |||||||||||||||||
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SZMMBZ20VALT1G | ONSEMI |
Category: Protection diodes - arraysDescription: Diode: TVS array; 20V; 1.4A; 40W; double,common anode; SOT23; Ch: 2 Application: automotive industry Type of diode: TVS array Max. forward impulse current: 1.4A Number of channels: 2 Tolerance: ±5% Max. off-state voltage: 17V Breakdown voltage: 20V Peak pulse power dissipation: 40W Mounting: SMD Kind of package: reel; tape Semiconductor structure: common anode; double Case: SOT23 |
на замовлення 5500 шт: термін постачання 21-30 дні (днів) |
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NTF3055L108T1G | ONSEMI |
Category: SMD N channel transistorsDescription: Transistor: N-MOSFET; unipolar; 60V; 1.4A; Idm: 9A; 1.3W; SOT223 Type of transistor: N-MOSFET Polarisation: unipolar Drain-source voltage: 60V Drain current: 1.4A Power dissipation: 1.3W Case: SOT223 Gate-source voltage: ±15V On-state resistance: 0.12Ω Mounting: SMD Kind of package: reel; tape Kind of channel: enhancement Gate charge: 15nC Pulsed drain current: 9A |
на замовлення 1246 шт: термін постачання 21-30 дні (днів) |
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2N6292G | ONSEMI |
Category: NPN THT transistorsDescription: Transistor: NPN; bipolar; 80V; 7A; 40W; TO220AB Type of transistor: NPN Polarisation: bipolar Power dissipation: 40W Case: TO220AB Mounting: THT Kind of package: tube Frequency: 4MHz Collector current: 7A Collector-emitter voltage: 80V |
на замовлення 990 шт: термін постачання 21-30 дні (днів) |
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LM393N | ONSEMI |
Category: THT comparatorsDescription: IC: comparator; universal; Cmp: 2; 3÷32V; THT; DIP8; tube; 150nA Type of integrated circuit: comparator Kind of comparator: universal Number of comparators: 2 Operating voltage: 3...32V Mounting: THT Case: DIP8 Operating temperature: 0...70°C Input offset voltage: 9mV Kind of package: tube Input offset current: 150nA |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||||||||||
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NSR10F40NXT5G | ONSEMI |
Category: SMD Schottky diodesDescription: Diode: Schottky rectifying; 0502; SMD; 40V; 1A; reel,tape Type of diode: Schottky rectifying Case: 0502 Mounting: SMD Max. off-state voltage: 40V Load current: 1A Semiconductor structure: single diode Max. forward voltage: 0.49V Max. forward impulse current: 18A Kind of package: reel; tape |
на замовлення 4500 шт: термін постачання 21-30 дні (днів) |
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| NSR10F20NXT5G | ONSEMI |
Category: SMD Schottky diodesDescription: Diode: Schottky rectifying; 0502; SMD; 20V; 1A; reel,tape Type of diode: Schottky rectifying Case: 0502 Mounting: SMD Max. off-state voltage: 20V Load current: 1A Semiconductor structure: single diode Max. forward voltage: 0.45V Max. forward impulse current: 18A Kind of package: reel; tape |
товару немає в наявності |
В кошику од. на суму грн. | |||||||||||||||||
| NSR1030QMUTWG | ONSEMI |
Category: SMD/THT sing. phase diode bridge rectif.Description: Bridge rectifier: single-phase; Urmax: 30V; If: 1A; Ifsm: 12A; uDFN4 Type of bridge rectifier: single-phase Max. off-state voltage: 30V Load current: 1A Max. forward impulse current: 12A Case: uDFN4 Electrical mounting: SMT Kind of package: reel; tape Max. forward voltage: 0.6V Features of semiconductor devices: Schottky |
товару немає в наявності |
В кошику од. на суму грн. | |||||||||||||||||
| NSR10F30NXT5G | ONSEMI |
Category: SMD Schottky diodesDescription: Diode: Schottky rectifying; 0502; SMD; 30V; 1A; reel,tape Type of diode: Schottky rectifying Case: 0502 Mounting: SMD Max. off-state voltage: 30V Load current: 1A Semiconductor structure: single diode Max. forward voltage: 0.47V Max. forward impulse current: 18A Kind of package: reel; tape |
товару немає в наявності |
В кошику од. на суму грн. | |||||||||||||||||
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BVSS84LT1G | ONSEMI |
Category: SMD P channel transistorsDescription: Transistor: P-MOSFET; unipolar; -50V; -0.13A; 0.225W; SOT23 Kind of channel: enhancement Type of transistor: P-MOSFET Polarisation: unipolar Case: SOT23 Mounting: SMD Drain-source voltage: -50V Drain current: -130mA Power dissipation: 0.225W On-state resistance: 10Ω Kind of package: reel; tape Gate-source voltage: ±20V |
на замовлення 3151 шт: термін постачання 21-30 дні (днів) |
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MM5Z12VT1G | ONSEMI |
Category: SMD Zener diodesDescription: Diode: Zener; 0.5W; 12V; SMD; reel,tape; SOD523F; single diode Type of diode: Zener Power dissipation: 0.5W Zener voltage: 12V Mounting: SMD Tolerance: ±5% Kind of package: reel; tape Case: SOD523F Semiconductor structure: single diode Manufacturer series: MM5ZxxT1G |
на замовлення 5995 шт: термін постачання 21-30 дні (днів) |
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| SZMM5Z12VT1G | ONSEMI |
Category: SMD Zener diodesDescription: Diode: Zener; 0.5W; 12V; SMD; reel,tape; SOD523F; single diode Type of diode: Zener Power dissipation: 0.5W Zener voltage: 12V Mounting: SMD Tolerance: ±5% Kind of package: reel; tape Case: SOD523F Semiconductor structure: single diode Manufacturer series: MM5ZxxT1G Application: automotive industry |
товару немає в наявності |
В кошику од. на суму грн. | |||||||||||||||||
| MM5Z4717T1G | ONSEMI |
Category: SMD Zener diodesDescription: Diode: Zener; 0.5W; 43V; SMD; reel,tape; SOD523F; single diode Type of diode: Zener Power dissipation: 0.5W Zener voltage: 43V Mounting: SMD Tolerance: ±5% Kind of package: reel; tape Case: SOD523F Semiconductor structure: single diode Manufacturer series: MM5Z4xxxT1G |
товару немає в наявності |
В кошику од. на суму грн. | |||||||||||||||||
| SZMM5Z4717T1G | ONSEMI |
Category: SMD Zener diodesDescription: Diode: Zener; 0.5W; 43V; SMD; reel,tape; SOD523F; single diode Type of diode: Zener Power dissipation: 0.5W Zener voltage: 43V Mounting: SMD Tolerance: ±5% Kind of package: reel; tape Case: SOD523F Semiconductor structure: single diode Manufacturer series: MM5Z4xxxT1G Application: automotive industry |
товару немає в наявності |
В кошику од. на суму грн. | |||||||||||||||||
| SZMM5Z5V1T1G | ONSEMI |
Category: SMD Zener diodesDescription: Diode: Zener; 0.5W; 5.1V; SMD; reel,tape; SOD523F; single diode Type of diode: Zener Power dissipation: 0.5W Zener voltage: 5.1V Mounting: SMD Tolerance: ±6% Kind of package: reel; tape Case: SOD523F Semiconductor structure: single diode Manufacturer series: MM5ZxxT1G Application: automotive industry |
товару немає в наявності |
В кошику од. на суму грн. | |||||||||||||||||
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MC79M15CDTRKG | ONSEMI |
Category: LDO fixed voltage regulatorsDescription: IC: voltage regulator; linear,fixed; -15V; 0.5A; DPAK; SMD; MC79M00 Type of integrated circuit: voltage regulator Kind of voltage regulator: fixed; linear Voltage drop: 1.1V Output voltage: -15V Output current: 0.5A Case: DPAK Mounting: SMD Manufacturer series: MC79M00 Kind of package: reel; tape Operating temperature: 0...125°C Tolerance: ±4% Number of channels: 1 |
на замовлення 2029 шт: термін постачання 21-30 дні (днів) |
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MC79M15CTG | ONSEMI |
Category: Fixed voltage regulatorsDescription: IC: voltage regulator; linear,fixed; -15V; 0.5A; TO220AB; THT; tube Type of integrated circuit: voltage regulator Kind of voltage regulator: fixed; linear Voltage drop: 1.3V Output voltage: -15V Output current: 0.5A Case: TO220AB Mounting: THT Manufacturer series: MC79M00 Kind of package: tube Operating temperature: 0...125°C Tolerance: ±4% Number of channels: 1 Heatsink thickness: 0.508...0.61mm |
на замовлення 119 шт: термін постачання 21-30 дні (днів) |
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MC79M15BDTRKG | ONSEMI |
Category: LDO fixed voltage regulatorsDescription: IC: voltage regulator; linear,fixed; -15V; 0.5A; DPAK; SMD; MC79M00 Type of integrated circuit: voltage regulator Kind of voltage regulator: fixed; linear Voltage drop: 1.1V Output voltage: -15V Output current: 0.5A Case: DPAK Mounting: SMD Manufacturer series: MC79M00 Kind of package: reel; tape Operating temperature: -40...125°C Tolerance: ±4% Number of channels: 1 |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||||||||||
| MC79M15BTG | ONSEMI |
Category: Fixed voltage regulatorsDescription: IC: voltage regulator; linear,fixed; -15V; 0.5A; TO220AB; THT; tube Type of integrated circuit: voltage regulator Kind of voltage regulator: fixed; linear Output voltage: -15V Output current: 0.5A Case: TO220AB Mounting: THT Kind of package: tube Number of channels: 1 |
товару немає в наявності |
В кошику од. на суму грн. | |||||||||||||||||
| NHP220SFT3G | ONSEMI |
Category: SMD universal diodesDescription: Diode: rectifying; SMD; 200V; 2A; 50ns; SOD123F; reel,tape Mounting: SMD Type of diode: rectifying Kind of package: reel; tape Semiconductor structure: single diode Case: SOD123F Reverse recovery time: 50ns Load current: 2A Max. off-state voltage: 200V |
товару немає в наявності |
В кошику од. на суму грн. | |||||||||||||||||
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NVTR4503NT1G | ONSEMI |
Category: SMD N channel transistorsDescription: Transistor: N-MOSFET; unipolar; 30V; 1.5A; 0.73W; SOT23 Polarisation: unipolar Case: SOT23 Kind of channel: enhancement Type of transistor: N-MOSFET Mounting: SMD Kind of package: reel; tape Gate charge: 7nC On-state resistance: 0.14Ω Power dissipation: 0.73W Drain current: 1.5A Gate-source voltage: ±20V Drain-source voltage: 30V |
на замовлення 147 шт: термін постачання 21-30 дні (днів) |
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| MC1496BDR2G | ONSEMI |
Category: RTV - audio integrated circuitsDescription: IC: modulator/demodulator Type of integrated circuit: modulator/demodulator |
на замовлення 2500 шт: термін постачання 21-30 дні (днів) |
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NCP114BSN330T1G | ONSEMI |
Category: LDO fixed voltage regulatorsDescription: IC: voltage regulator; LDO,linear,fixed; 3.3V; 225mA; TSSOP5; SMD Manufacturer series: NCP114 Operating temperature: -40...85°C Voltage drop: 0.135V Output current: 0.225A Output voltage: 3.3V Number of channels: 1 Input voltage: 1.7...5.5V Tolerance: ±2% Kind of voltage regulator: fixed; LDO; linear Kind of package: reel; tape Mounting: SMD Case: TSSOP5 Type of integrated circuit: voltage regulator |
на замовлення 1320 шт: термін постачання 21-30 дні (днів) |
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FCP16N60 | ONSEMI |
Category: THT N channel transistorsDescription: Transistor: N-MOSFET; unipolar; 600V; 10.1A; Idm: 48A; 167W; TO220AB Type of transistor: N-MOSFET Polarisation: unipolar Drain-source voltage: 600V Drain current: 10.1A Power dissipation: 167W Case: TO220AB Gate-source voltage: ±30V On-state resistance: 0.26Ω Mounting: THT Kind of package: tube Kind of channel: enhancement Gate charge: 70nC Pulsed drain current: 48A |
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В кошику од. на суму грн. | ||||||||||||||||
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FCPF16N60 | ONSEMI |
Category: THT N channel transistorsDescription: Transistor: N-MOSFET; SJ-MOSFET; unipolar; 600V; 10.1A; Idm: 48A Type of transistor: N-MOSFET Technology: SJ-MOSFET Polarisation: unipolar Drain-source voltage: 600V Drain current: 10.1A Power dissipation: 37.9W Case: TO220FP Gate-source voltage: ±30V On-state resistance: 0.26Ω Mounting: THT Kind of package: tube Kind of channel: enhancement Gate charge: 70nC Pulsed drain current: 48A |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||||||||||
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FDC610PZ | ONSEMI |
Category: SMD P channel transistorsDescription: Transistor: P-MOSFET; unipolar; -30V; -4.9A; 1.6W; SuperSOT-6 Mounting: SMD Type of transistor: P-MOSFET Case: SuperSOT-6 Polarisation: unipolar Drain-source voltage: -30V Drain current: -4.9A Gate charge: 13nC On-state resistance: 75mΩ Gate-source voltage: ±25V Power dissipation: 1.6W Kind of channel: enhancement Technology: PowerTrench® Kind of package: reel; tape |
на замовлення 462 шт: термін постачання 21-30 дні (днів) |
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| NCP1246ALD065R2G | ONSEMI |
Category: Voltage regulators - DC/DC circuitsDescription: IC: PMIC; AC/DC switcher,PWM controller; SO7; flyback Type of integrated circuit: PMIC Kind of integrated circuit: AC/DC switcher; PWM controller Output current: 500...800mA Frequency: 58...72kHz Mounting: SMD Case: SO7 Topology: flyback Number of channels: 1 Operating temperature: -40...125°C Operating voltage: 8.9...26.5V DC |
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В кошику од. на суму грн. | |||||||||||||||||
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CAT5113VI-00-GT3 | ONSEMI |
Category: Digital potentiometersDescription: IC: digital potentiometer; 100kΩ; Up/Down Protocol; 5bit; SO8; SMD Resistance: 100kΩ Mounting: SMD Operating temperature: -40...85°C Interface: Up/Down Protocol Type of integrated circuit: digital potentiometer Kind of memory: non-volatile Case: SO8 Max DNL: ±0.5LSB Number of channels: 1 Max INL: ±1LSB Supply voltage: 2.5...6V Converter resolution: 5bit Number of positions: 100 |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||||||||||
|
FQD2N60CTM | ONSEMI |
Category: SMD N channel transistorsDescription: Transistor: N-MOSFET; unipolar; 600V; 1.14A; 44W; DPAK Type of transistor: N-MOSFET Polarisation: unipolar Drain-source voltage: 600V Drain current: 1.14A Power dissipation: 44W Case: DPAK Gate-source voltage: ±30V On-state resistance: 4.7Ω Mounting: SMD Gate charge: 12nC Kind of package: reel; tape Kind of channel: enhancement Technology: QFET® |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||||||||||
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NTR4501NT1G | ONSEMI |
Category: SMD N channel transistorsDescription: Transistor: N-MOSFET; unipolar; 20V; 2.4A; Idm: 10A; 1.25W; SOT23 Type of transistor: N-MOSFET Polarisation: unipolar Drain-source voltage: 20V Drain current: 2.4A Pulsed drain current: 10A Power dissipation: 1.25W Case: SOT23 Gate-source voltage: ±12V On-state resistance: 0.105Ω Mounting: SMD Gate charge: 6nC Kind of package: reel; tape Kind of channel: enhancement |
на замовлення 8181 шт: термін постачання 21-30 дні (днів) |
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NTR4503NT1G | ONSEMI |
Category: SMD N channel transistorsDescription: Transistor: N-MOSFET; unipolar; 30V; 2.5A; Idm: 10A; 730mW; SOT23 Type of transistor: N-MOSFET Polarisation: unipolar Drain-source voltage: 30V Drain current: 2.5A Pulsed drain current: 10A Power dissipation: 0.73W Case: SOT23 Gate-source voltage: ±20V On-state resistance: 0.11Ω Mounting: SMD Gate charge: 3.6nC Kind of package: reel; tape Kind of channel: enhancement |
на замовлення 2846 шт: термін постачання 21-30 дні (днів) |
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NDT452AP | ONSEMI |
Category: SMD P channel transistorsDescription: Transistor: P-MOSFET; unipolar; -30V; -5A; 3W; SOT223 Type of transistor: P-MOSFET Polarisation: unipolar Drain-source voltage: -30V Drain current: -5A Power dissipation: 3W Case: SOT223 Gate-source voltage: ±20V On-state resistance: 0.13Ω Mounting: SMD Kind of package: reel; tape Kind of channel: enhancement |
на замовлення 4023 шт: термін постачання 21-30 дні (днів) |
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| MBR2035CT | ONSEMI |
Category: THT Schottky diodesDescription: Diode: Schottky rectifying; THT; 35V; 10Ax2; TO220AB; Ufmax: 0.95V Type of diode: Schottky rectifying Mounting: THT Max. off-state voltage: 35V Load current: 10A x2 Semiconductor structure: common cathode; double Case: TO220AB Kind of package: tube Max. forward impulse current: 150A Max. forward voltage: 0.95V Max. load current: 20A |
товару немає в наявності |
В кошику од. на суму грн. | |||||||||||||||||
| MOCD207R2VM | ONSEMI |
Category: Optocouplers - analog outputDescription: Optocoupler; SMD; Ch: 2; OUT: transistor; Uinsul: 2.5kV; Uce: 70V Type of optocoupler: optocoupler Mounting: SMD Number of channels: 2 Kind of output: transistor Insulation voltage: 2.5kV Collector-emitter voltage: 70V Case: SOIC8 Max. off-state voltage: 6V Number of pins: 8 Operating temperature: -40...100°C Load current: 60mA Max. load current: 60mA |
на замовлення 2500 шт: термін постачання 21-30 дні (днів) |
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| MC14018BDG |
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Виробник: ONSEMI
Category: Counters/dividers
Description: IC: digital; divide by N,counter; CMOS; SMD; SOIC16; HEF4000B; tube
Operating temperature: -55...125°C
Type of integrated circuit: digital
Family: HEF4000B
Mounting: SMD
Case: SOIC16
Supply voltage: 3...18V DC
Kind of package: tube
Technology: CMOS
Kind of integrated circuit: counter; divide by N
Category: Counters/dividers
Description: IC: digital; divide by N,counter; CMOS; SMD; SOIC16; HEF4000B; tube
Operating temperature: -55...125°C
Type of integrated circuit: digital
Family: HEF4000B
Mounting: SMD
Case: SOIC16
Supply voltage: 3...18V DC
Kind of package: tube
Technology: CMOS
Kind of integrated circuit: counter; divide by N
на замовлення 34 шт:
термін постачання 21-30 дні (днів)| Кількість | Ціна |
|---|---|
| 10+ | 46.48 грн |
| 11+ | 38.37 грн |
| MC14018BDR2G |
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Виробник: ONSEMI
Category: Counters/dividers
Description: IC: digital; divide by N,counter; CMOS; SMD; SOIC16; HEF4000B
Operating temperature: -55...125°C
Type of integrated circuit: digital
Family: HEF4000B
Mounting: SMD
Case: SOIC16
Supply voltage: 3...18V DC
Kind of package: reel; tape
Technology: CMOS
Kind of integrated circuit: counter; divide by N
Category: Counters/dividers
Description: IC: digital; divide by N,counter; CMOS; SMD; SOIC16; HEF4000B
Operating temperature: -55...125°C
Type of integrated circuit: digital
Family: HEF4000B
Mounting: SMD
Case: SOIC16
Supply voltage: 3...18V DC
Kind of package: reel; tape
Technology: CMOS
Kind of integrated circuit: counter; divide by N
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| MC14011UBDG |
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Виробник: ONSEMI
Category: Gates, inverters
Description: IC: digital; NAND; Ch: 4; IN: 2; CMOS; SMD; SO14; 3÷18VDC; -55÷125°C
Type of integrated circuit: digital
Kind of gate: NAND
Number of channels: quad; 4
Number of inputs: 2
Technology: CMOS
Mounting: SMD
Case: SO14
Supply voltage: 3...18V DC
Operating temperature: -55...125°C
Kind of package: tube
Family: HEF4000B
Delay time: 100ns
Category: Gates, inverters
Description: IC: digital; NAND; Ch: 4; IN: 2; CMOS; SMD; SO14; 3÷18VDC; -55÷125°C
Type of integrated circuit: digital
Kind of gate: NAND
Number of channels: quad; 4
Number of inputs: 2
Technology: CMOS
Mounting: SMD
Case: SO14
Supply voltage: 3...18V DC
Operating temperature: -55...125°C
Kind of package: tube
Family: HEF4000B
Delay time: 100ns
на замовлення 539 шт:
термін постачання 21-30 дні (днів)| Кількість | Ціна |
|---|---|
| 17+ | 25.82 грн |
| 24+ | 16.86 грн |
| 27+ | 15.35 грн |
| 55+ | 14.23 грн |
| 110+ | 13.43 грн |
| 275+ | 12.63 грн |
| MC14011BDR2G |
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Виробник: ONSEMI
Category: Gates, inverters
Description: IC: digital; NAND; Ch: 4; IN: 2; CMOS; SMD; SO14; 3÷18VDC; -55÷125°C
Type of integrated circuit: digital
Kind of gate: NAND
Number of channels: quad; 4
Number of inputs: 2
Technology: CMOS
Mounting: SMD
Case: SO14
Supply voltage: 3...18V DC
Operating temperature: -55...125°C
Kind of package: reel; tape
Family: HEF4000B
Delay time: 100ns
Category: Gates, inverters
Description: IC: digital; NAND; Ch: 4; IN: 2; CMOS; SMD; SO14; 3÷18VDC; -55÷125°C
Type of integrated circuit: digital
Kind of gate: NAND
Number of channels: quad; 4
Number of inputs: 2
Technology: CMOS
Mounting: SMD
Case: SO14
Supply voltage: 3...18V DC
Operating temperature: -55...125°C
Kind of package: reel; tape
Family: HEF4000B
Delay time: 100ns
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| MC14011UBDR2G |
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Виробник: ONSEMI
Category: Gates, inverters
Description: IC: digital; NAND; Ch: 4; IN: 2; CMOS; SMD; SO14; 3÷18VDC; -55÷125°C
Type of integrated circuit: digital
Kind of gate: NAND
Number of channels: quad; 4
Number of inputs: 2
Technology: CMOS
Mounting: SMD
Case: SO14
Supply voltage: 3...18V DC
Operating temperature: -55...125°C
Kind of package: reel; tape
Family: HEF4000B
Delay time: 100ns
Category: Gates, inverters
Description: IC: digital; NAND; Ch: 4; IN: 2; CMOS; SMD; SO14; 3÷18VDC; -55÷125°C
Type of integrated circuit: digital
Kind of gate: NAND
Number of channels: quad; 4
Number of inputs: 2
Technology: CMOS
Mounting: SMD
Case: SO14
Supply voltage: 3...18V DC
Operating temperature: -55...125°C
Kind of package: reel; tape
Family: HEF4000B
Delay time: 100ns
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| FQB33N10LTM |
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Виробник: ONSEMI
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 100V; 23A; Idm: 132A; 127W; D2PAK
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 100V
Drain current: 23A
Case: D2PAK
Gate-source voltage: ±20V
Mounting: SMD
Kind of package: reel; tape
Kind of channel: enhancement
Gate charge: 40nC
Power dissipation: 127W
Pulsed drain current: 132A
Technology: QFET®
On-state resistance: 55mΩ
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 100V; 23A; Idm: 132A; 127W; D2PAK
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 100V
Drain current: 23A
Case: D2PAK
Gate-source voltage: ±20V
Mounting: SMD
Kind of package: reel; tape
Kind of channel: enhancement
Gate charge: 40nC
Power dissipation: 127W
Pulsed drain current: 132A
Technology: QFET®
On-state resistance: 55mΩ
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| FQB33N10TM |
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Виробник: ONSEMI
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 100V; 23A; 127W; D2PAK
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 100V
Drain current: 23A
Case: D2PAK
Gate-source voltage: ±25V
Mounting: SMD
Kind of package: reel; tape
Kind of channel: enhancement
Gate charge: 51nC
Power dissipation: 127W
Technology: QFET®
On-state resistance: 52mΩ
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 100V; 23A; 127W; D2PAK
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 100V
Drain current: 23A
Case: D2PAK
Gate-source voltage: ±25V
Mounting: SMD
Kind of package: reel; tape
Kind of channel: enhancement
Gate charge: 51nC
Power dissipation: 127W
Technology: QFET®
On-state resistance: 52mΩ
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| FOD3150 |
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Виробник: ONSEMI
Category: Optocouplers - analog output
Description: Optocoupler; THT; Ch: 1; OUT: transistor; Uinsul: 5kV; DIP8; 50kV/μs
Kind of output: transistor
Type of optocoupler: optocoupler
Mounting: THT
Output voltage: 0...35V
Turn-off time: 60ns
Turn-on time: 60ns
Number of channels: 1
Max. off-state voltage: 5V
Insulation voltage: 5kV
Case: DIP8
Slew rate: 50kV/μs
Category: Optocouplers - analog output
Description: Optocoupler; THT; Ch: 1; OUT: transistor; Uinsul: 5kV; DIP8; 50kV/μs
Kind of output: transistor
Type of optocoupler: optocoupler
Mounting: THT
Output voltage: 0...35V
Turn-off time: 60ns
Turn-on time: 60ns
Number of channels: 1
Max. off-state voltage: 5V
Insulation voltage: 5kV
Case: DIP8
Slew rate: 50kV/μs
на замовлення 383 шт:
термін постачання 21-30 дні (днів)| Кількість | Ціна |
|---|---|
| 6+ | 70.34 грн |
| 25+ | 67.14 грн |
| 100+ | 59.15 грн |
| FDC642P |
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Виробник: ONSEMI
Category: SMD P channel transistors
Description: Transistor: P-MOSFET; unipolar; -20V; -4A; 1.2W; SuperSOT-6
Drain current: -4A
On-state resistance: 0.105Ω
Power dissipation: 1.2W
Gate-source voltage: ±8V
Kind of channel: enhancement
Type of transistor: P-MOSFET
Kind of package: reel; tape
Mounting: SMD
Case: SuperSOT-6
Polarisation: unipolar
Drain-source voltage: -20V
Category: SMD P channel transistors
Description: Transistor: P-MOSFET; unipolar; -20V; -4A; 1.2W; SuperSOT-6
Drain current: -4A
On-state resistance: 0.105Ω
Power dissipation: 1.2W
Gate-source voltage: ±8V
Kind of channel: enhancement
Type of transistor: P-MOSFET
Kind of package: reel; tape
Mounting: SMD
Case: SuperSOT-6
Polarisation: unipolar
Drain-source voltage: -20V
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| NSR20F30NXT5G |
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Виробник: ONSEMI
Category: SMD Schottky diodes
Description: Diode: Schottky rectifying; DSN0603-2; SMD; 30V; 2A; reel,tape
Kind of package: reel; tape
Type of diode: Schottky rectifying
Semiconductor structure: single diode
Mounting: SMD
Load current: 2A
Max. forward voltage: 0.48V
Max. off-state voltage: 30V
Max. load current: 4A
Max. forward impulse current: 28A
Case: DSN0603-2
Category: SMD Schottky diodes
Description: Diode: Schottky rectifying; DSN0603-2; SMD; 30V; 2A; reel,tape
Kind of package: reel; tape
Type of diode: Schottky rectifying
Semiconductor structure: single diode
Mounting: SMD
Load current: 2A
Max. forward voltage: 0.48V
Max. off-state voltage: 30V
Max. load current: 4A
Max. forward impulse current: 28A
Case: DSN0603-2
на замовлення 966 шт:
термін постачання 21-30 дні (днів)| Кількість | Ціна |
|---|---|
| 11+ | 40.46 грн |
| 16+ | 25.90 грн |
| 50+ | 19.66 грн |
| 100+ | 17.42 грн |
| LM285D-2.5R2G |
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Виробник: ONSEMI
Category: Reference voltage sources - circuits
Description: IC: voltage reference source; 2.5V; ±1.5%; SO8; reel,tape; 20mA
Type of integrated circuit: voltage reference source
Reference voltage: 2.5V
Tolerance: ±1.5%
Mounting: SMD
Case: SO8
Operating temperature: -40...85°C
Kind of package: reel; tape
Maximum output current: 20mA
Category: Reference voltage sources - circuits
Description: IC: voltage reference source; 2.5V; ±1.5%; SO8; reel,tape; 20mA
Type of integrated circuit: voltage reference source
Reference voltage: 2.5V
Tolerance: ±1.5%
Mounting: SMD
Case: SO8
Operating temperature: -40...85°C
Kind of package: reel; tape
Maximum output current: 20mA
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| KSD5041RTA |
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Виробник: ONSEMI
Category: NPN THT transistors
Description: Transistor: NPN; bipolar; 20V; 5A; 0.75W; TO92
Case: TO92
Type of transistor: NPN
Mounting: THT
Power dissipation: 0.75W
Collector current: 5A
Collector-emitter voltage: 20V
Current gain: 340...600
Frequency: 150MHz
Kind of package: Ammo Pack
Polarisation: bipolar
Category: NPN THT transistors
Description: Transistor: NPN; bipolar; 20V; 5A; 0.75W; TO92
Case: TO92
Type of transistor: NPN
Mounting: THT
Power dissipation: 0.75W
Collector current: 5A
Collector-emitter voltage: 20V
Current gain: 340...600
Frequency: 150MHz
Kind of package: Ammo Pack
Polarisation: bipolar
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| KSD1408YTU |
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Виробник: ONSEMI
Category: NPN THT transistors
Description: Transistor: NPN; bipolar; 80V; 4A; 25W; TO220FP
Case: TO220FP
Mounting: THT
Power dissipation: 25W
Collector current: 4A
Type of transistor: NPN
Collector-emitter voltage: 80V
Polarisation: bipolar
Current gain: 120...240
Kind of package: tube
Frequency: 8MHz
Category: NPN THT transistors
Description: Transistor: NPN; bipolar; 80V; 4A; 25W; TO220FP
Case: TO220FP
Mounting: THT
Power dissipation: 25W
Collector current: 4A
Type of transistor: NPN
Collector-emitter voltage: 80V
Polarisation: bipolar
Current gain: 120...240
Kind of package: tube
Frequency: 8MHz
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| KSD560YTU |
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Виробник: ONSEMI
Category: NPN THT Darlington transistors
Description: Transistor: NPN; bipolar; Darlington; 100V; 5A; 1.5W; TO220AB
Case: TO220AB
Kind of transistor: Darlington
Type of transistor: NPN
Mounting: THT
Power dissipation: 1.5W
Collector current: 5A
Collector-emitter voltage: 100V
Kind of package: tube
Polarisation: bipolar
Category: NPN THT Darlington transistors
Description: Transistor: NPN; bipolar; Darlington; 100V; 5A; 1.5W; TO220AB
Case: TO220AB
Kind of transistor: Darlington
Type of transistor: NPN
Mounting: THT
Power dissipation: 1.5W
Collector current: 5A
Collector-emitter voltage: 100V
Kind of package: tube
Polarisation: bipolar
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| UJ3D1210KSD |
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Виробник: ONSEMI
Category: THT Schottky diodes
Description: Diode: Schottky rectifying; SiC; THT; 1.2kV; 5A; TO247-3; 13W; tube
Case: TO247-3
Type of diode: Schottky rectifying
Mounting: THT
Technology: SiC
Power dissipation: 13W
Max. forward voltage: 1200V
Load current: 5A
Max. forward impulse current: 63A
Max. off-state voltage: 1.2kV
Kind of package: tube
Semiconductor structure: single diode
Category: THT Schottky diodes
Description: Diode: Schottky rectifying; SiC; THT; 1.2kV; 5A; TO247-3; 13W; tube
Case: TO247-3
Type of diode: Schottky rectifying
Mounting: THT
Technology: SiC
Power dissipation: 13W
Max. forward voltage: 1200V
Load current: 5A
Max. forward impulse current: 63A
Max. off-state voltage: 1.2kV
Kind of package: tube
Semiconductor structure: single diode
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| UJ3D06560KSD |
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Виробник: ONSEMI
Category: THT Schottky diodes
Description: Diode: Schottky rectifying; SiC; THT; 650V; 30A; TO247-3; tube
Case: TO247-3
Type of diode: Schottky rectifying
Mounting: THT
Technology: SiC
Max. forward voltage: 650V
Load current: 30A
Max. load current: 107.2A
Max. forward impulse current: 1.25kA
Max. off-state voltage: 650V
Kind of package: tube
Semiconductor structure: common cathode; double
Category: THT Schottky diodes
Description: Diode: Schottky rectifying; SiC; THT; 650V; 30A; TO247-3; tube
Case: TO247-3
Type of diode: Schottky rectifying
Mounting: THT
Technology: SiC
Max. forward voltage: 650V
Load current: 30A
Max. load current: 107.2A
Max. forward impulse current: 1.25kA
Max. off-state voltage: 650V
Kind of package: tube
Semiconductor structure: common cathode; double
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| SZ1SMB5931BT3G |
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Виробник: ONSEMI
Category: SMD Zener diodes
Description: Diode: Zener; 3W; 18V; SMD; reel,tape; SMB; single diode
Type of diode: Zener
Power dissipation: 3W
Zener voltage: 18V
Mounting: SMD
Tolerance: ±5%
Kind of package: reel; tape
Case: SMB
Semiconductor structure: single diode
Manufacturer series: 1SMB59xxBT3G
Application: automotive industry
Category: SMD Zener diodes
Description: Diode: Zener; 3W; 18V; SMD; reel,tape; SMB; single diode
Type of diode: Zener
Power dissipation: 3W
Zener voltage: 18V
Mounting: SMD
Tolerance: ±5%
Kind of package: reel; tape
Case: SMB
Semiconductor structure: single diode
Manufacturer series: 1SMB59xxBT3G
Application: automotive industry
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| NCP3420DR2G |
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Виробник: ONSEMI
Category: MOSFET/IGBT drivers
Description: IC: driver; H-bridge; high-side,low-side,gate driver; SO8
Type of integrated circuit: driver
Topology: H-bridge
Kind of integrated circuit: gate driver; high-side; low-side
Case: SO8
Supply voltage: 4.6...13.2V DC
Mounting: SMD
Operating temperature: 0...85°C
Category: MOSFET/IGBT drivers
Description: IC: driver; H-bridge; high-side,low-side,gate driver; SO8
Type of integrated circuit: driver
Topology: H-bridge
Kind of integrated circuit: gate driver; high-side; low-side
Case: SO8
Supply voltage: 4.6...13.2V DC
Mounting: SMD
Operating temperature: 0...85°C
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| 1N4148WS |
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Виробник: ONSEMI
Category: SMD universal diodes
Description: Diode: switching; SMD; 75V; 0.15A; 4ns; SOD323F; Ufmax: 1V; Ifsm: 1A
Type of diode: switching
Mounting: SMD
Max. off-state voltage: 75V
Load current: 0.15A
Semiconductor structure: single diode
Features of semiconductor devices: small signal
Kind of package: reel; tape
Max. forward impulse current: 1A
Case: SOD323F
Max. forward voltage: 1V
Reverse recovery time: 4ns
Power dissipation: 0.2W
Capacitance: 4pF
Category: SMD universal diodes
Description: Diode: switching; SMD; 75V; 0.15A; 4ns; SOD323F; Ufmax: 1V; Ifsm: 1A
Type of diode: switching
Mounting: SMD
Max. off-state voltage: 75V
Load current: 0.15A
Semiconductor structure: single diode
Features of semiconductor devices: small signal
Kind of package: reel; tape
Max. forward impulse current: 1A
Case: SOD323F
Max. forward voltage: 1V
Reverse recovery time: 4ns
Power dissipation: 0.2W
Capacitance: 4pF
на замовлення 1510 шт:
термін постачання 21-30 дні (днів)| Кількість | Ціна |
|---|---|
| 72+ | 6.03 грн |
| 84+ | 4.80 грн |
| 93+ | 4.32 грн |
| 123+ | 3.26 грн |
| 139+ | 2.89 грн |
| 500+ | 2.19 грн |
| 1000+ | 1.94 грн |
| FDP027N08B-F102 |
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Виробник: ONSEMI
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 80V; 223A; Idm: 892A; 246W; TO220-3
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 80V
Drain current: 223A
Pulsed drain current: 892A
Power dissipation: 246W
Case: TO220-3
Gate-source voltage: ±20V
On-state resistance: 2.7mΩ
Mounting: THT
Gate charge: 137nC
Kind of package: tube
Kind of channel: enhancement
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 80V; 223A; Idm: 892A; 246W; TO220-3
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 80V
Drain current: 223A
Pulsed drain current: 892A
Power dissipation: 246W
Case: TO220-3
Gate-source voltage: ±20V
On-state resistance: 2.7mΩ
Mounting: THT
Gate charge: 137nC
Kind of package: tube
Kind of channel: enhancement
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| NVMFS027N10MCLT1G |
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Виробник: ONSEMI
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 100V; 28A; Idm: 137A; 23W; DFN5
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 100V
Drain current: 28A
Pulsed drain current: 137A
Power dissipation: 23W
Case: DFN5
Gate-source voltage: ±20V
On-state resistance: 26mΩ
Mounting: SMD
Gate charge: 11.5nC
Kind of package: reel; tape
Kind of channel: enhancement
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 100V; 28A; Idm: 137A; 23W; DFN5
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 100V
Drain current: 28A
Pulsed drain current: 137A
Power dissipation: 23W
Case: DFN5
Gate-source voltage: ±20V
On-state resistance: 26mΩ
Mounting: SMD
Gate charge: 11.5nC
Kind of package: reel; tape
Kind of channel: enhancement
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| NVTFWS027N10MCLTAG |
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Виробник: ONSEMI
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 100V; 28A; Idm: 119A; 23W; WDFN8
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 100V
Drain current: 28A
Pulsed drain current: 119A
Power dissipation: 23W
Case: WDFN8
Gate-source voltage: ±20V
On-state resistance: 26mΩ
Mounting: SMD
Gate charge: 11.5nC
Kind of package: reel; tape
Kind of channel: enhancement
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 100V; 28A; Idm: 119A; 23W; WDFN8
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 100V
Drain current: 28A
Pulsed drain current: 119A
Power dissipation: 23W
Case: WDFN8
Gate-source voltage: ±20V
On-state resistance: 26mΩ
Mounting: SMD
Gate charge: 11.5nC
Kind of package: reel; tape
Kind of channel: enhancement
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| FDS4480 |
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Виробник: ONSEMI
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 40V; 10.8A; Idm: 45A; 2.5W; SO8
Type of transistor: N-MOSFET
Polarisation: unipolar
Case: SO8
Mounting: SMD
Kind of package: reel; tape
Power dissipation: 2.5W
On-state resistance: 21mΩ
Drain current: 10.8A
Drain-source voltage: 40V
Pulsed drain current: 45A
Gate charge: 41nC
Technology: PowerTrench®
Kind of channel: enhancement
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 40V; 10.8A; Idm: 45A; 2.5W; SO8
Type of transistor: N-MOSFET
Polarisation: unipolar
Case: SO8
Mounting: SMD
Kind of package: reel; tape
Power dissipation: 2.5W
On-state resistance: 21mΩ
Drain current: 10.8A
Drain-source voltage: 40V
Pulsed drain current: 45A
Gate charge: 41nC
Technology: PowerTrench®
Kind of channel: enhancement
на замовлення 2328 шт:
термін постачання 21-30 дні (днів)| Кількість | Ціна |
|---|---|
| 7+ | 68.86 грн |
| 8+ | 56.27 грн |
| 25+ | 49.63 грн |
| 100+ | 44.60 грн |
| 500+ | 42.28 грн |
| MMBT589LT1G |
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Виробник: ONSEMI
Category: PNP SMD transistors
Description: Transistor: PNP; bipolar; 30V; 1A; 0.31/0.71W; SOT23,TO236AB
Case: SOT23; TO236AB
Mounting: SMD
Kind of package: reel; tape
Collector current: 1A
Power dissipation: 0.31/0.71W
Collector-emitter voltage: 30V
Current gain: 100...300
Frequency: 100MHz
Polarisation: bipolar
Type of transistor: PNP
Category: PNP SMD transistors
Description: Transistor: PNP; bipolar; 30V; 1A; 0.31/0.71W; SOT23,TO236AB
Case: SOT23; TO236AB
Mounting: SMD
Kind of package: reel; tape
Collector current: 1A
Power dissipation: 0.31/0.71W
Collector-emitter voltage: 30V
Current gain: 100...300
Frequency: 100MHz
Polarisation: bipolar
Type of transistor: PNP
на замовлення 1521 шт:
термін постачання 21-30 дні (днів)| Кількість | Ціна |
|---|---|
| 14+ | 30.99 грн |
| 20+ | 20.86 грн |
| 50+ | 14.31 грн |
| 100+ | 12.07 грн |
| 500+ | 8.47 грн |
| 1000+ | 7.43 грн |
| 1500+ | 7.27 грн |
| 1N5339BRLG |
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Виробник: ONSEMI
Category: THT Zener diodes
Description: Diode: Zener; 5W; 5.6V; reel,tape; CASE017AA; single diode; 1uA
Type of diode: Zener
Power dissipation: 5W
Zener voltage: 5.6V
Kind of package: reel; tape
Case: CASE017AA
Mounting: THT
Tolerance: ±5%
Semiconductor structure: single diode
Leakage current: 1µA
Manufacturer series: 1N53xxB
Category: THT Zener diodes
Description: Diode: Zener; 5W; 5.6V; reel,tape; CASE017AA; single diode; 1uA
Type of diode: Zener
Power dissipation: 5W
Zener voltage: 5.6V
Kind of package: reel; tape
Case: CASE017AA
Mounting: THT
Tolerance: ±5%
Semiconductor structure: single diode
Leakage current: 1µA
Manufacturer series: 1N53xxB
на замовлення 3950 шт:
термін постачання 21-30 дні (днів)| Кількість | Ціна |
|---|---|
| 15+ | 29.27 грн |
| 30+ | 13.35 грн |
| 100+ | 12.39 грн |
| 500+ | 11.43 грн |
| 1000+ | 10.47 грн |
| D-STPR-GEVK |
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Виробник: ONSEMI
Category: Development kits - others
Description: Expansion board; prototype board; Comp: AMIS30543
Interface: I2C; I2C - Slave; SPI
Kit contents: prototype board
Kind of connector: pin strips; screw
Components: AMIS30543
Type of accessories for development kits: expansion board
development kits accessories features: Arduino Shield compatible; stepper motor driver
Category: Development kits - others
Description: Expansion board; prototype board; Comp: AMIS30543
Interface: I2C; I2C - Slave; SPI
Kit contents: prototype board
Kind of connector: pin strips; screw
Components: AMIS30543
Type of accessories for development kits: expansion board
development kits accessories features: Arduino Shield compatible; stepper motor driver
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| FDB0170N607L |
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Виробник: ONSEMI
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 60V; 300A; Idm: 1620A; 250W; D2PAK-7
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 60V
Drain current: 300A
Pulsed drain current: 1620A
Power dissipation: 250W
Case: D2PAK-7
Gate-source voltage: ±20V
On-state resistance: 1.4mΩ
Mounting: SMD
Gate charge: 173nC
Kind of package: reel; tape
Kind of channel: enhancement
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 60V; 300A; Idm: 1620A; 250W; D2PAK-7
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 60V
Drain current: 300A
Pulsed drain current: 1620A
Power dissipation: 250W
Case: D2PAK-7
Gate-source voltage: ±20V
On-state resistance: 1.4mΩ
Mounting: SMD
Gate charge: 173nC
Kind of package: reel; tape
Kind of channel: enhancement
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| SZMMBZ20VALT1G |
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Виробник: ONSEMI
Category: Protection diodes - arrays
Description: Diode: TVS array; 20V; 1.4A; 40W; double,common anode; SOT23; Ch: 2
Application: automotive industry
Type of diode: TVS array
Max. forward impulse current: 1.4A
Number of channels: 2
Tolerance: ±5%
Max. off-state voltage: 17V
Breakdown voltage: 20V
Peak pulse power dissipation: 40W
Mounting: SMD
Kind of package: reel; tape
Semiconductor structure: common anode; double
Case: SOT23
Category: Protection diodes - arrays
Description: Diode: TVS array; 20V; 1.4A; 40W; double,common anode; SOT23; Ch: 2
Application: automotive industry
Type of diode: TVS array
Max. forward impulse current: 1.4A
Number of channels: 2
Tolerance: ±5%
Max. off-state voltage: 17V
Breakdown voltage: 20V
Peak pulse power dissipation: 40W
Mounting: SMD
Kind of package: reel; tape
Semiconductor structure: common anode; double
Case: SOT23
на замовлення 5500 шт:
термін постачання 21-30 дні (днів)| Кількість | Ціна |
|---|---|
| 50+ | 8.61 грн |
| 73+ | 5.51 грн |
| 83+ | 4.83 грн |
| 106+ | 3.78 грн |
| 500+ | 2.59 грн |
| 1000+ | 2.07 грн |
| 3000+ | 1.93 грн |
| NTF3055L108T1G |
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Виробник: ONSEMI
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 60V; 1.4A; Idm: 9A; 1.3W; SOT223
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 60V
Drain current: 1.4A
Power dissipation: 1.3W
Case: SOT223
Gate-source voltage: ±15V
On-state resistance: 0.12Ω
Mounting: SMD
Kind of package: reel; tape
Kind of channel: enhancement
Gate charge: 15nC
Pulsed drain current: 9A
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 60V; 1.4A; Idm: 9A; 1.3W; SOT223
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 60V
Drain current: 1.4A
Power dissipation: 1.3W
Case: SOT223
Gate-source voltage: ±15V
On-state resistance: 0.12Ω
Mounting: SMD
Kind of package: reel; tape
Kind of channel: enhancement
Gate charge: 15nC
Pulsed drain current: 9A
на замовлення 1246 шт:
термін постачання 21-30 дні (днів)| Кількість | Ціна |
|---|---|
| 11+ | 39.59 грн |
| 50+ | 30.13 грн |
| 100+ | 27.34 грн |
| 200+ | 25.02 грн |
| 2N6292G | ![]() |
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Виробник: ONSEMI
Category: NPN THT transistors
Description: Transistor: NPN; bipolar; 80V; 7A; 40W; TO220AB
Type of transistor: NPN
Polarisation: bipolar
Power dissipation: 40W
Case: TO220AB
Mounting: THT
Kind of package: tube
Frequency: 4MHz
Collector current: 7A
Collector-emitter voltage: 80V
Category: NPN THT transistors
Description: Transistor: NPN; bipolar; 80V; 7A; 40W; TO220AB
Type of transistor: NPN
Polarisation: bipolar
Power dissipation: 40W
Case: TO220AB
Mounting: THT
Kind of package: tube
Frequency: 4MHz
Collector current: 7A
Collector-emitter voltage: 80V
на замовлення 990 шт:
термін постачання 21-30 дні (днів)| Кількість | Ціна |
|---|---|
| 8+ | 55.95 грн |
| 10+ | 46.36 грн |
| 50+ | 43.16 грн |
| 100+ | 40.76 грн |
| 250+ | 36.77 грн |
| 500+ | 35.97 грн |
| LM393N |
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Виробник: ONSEMI
Category: THT comparators
Description: IC: comparator; universal; Cmp: 2; 3÷32V; THT; DIP8; tube; 150nA
Type of integrated circuit: comparator
Kind of comparator: universal
Number of comparators: 2
Operating voltage: 3...32V
Mounting: THT
Case: DIP8
Operating temperature: 0...70°C
Input offset voltage: 9mV
Kind of package: tube
Input offset current: 150nA
Category: THT comparators
Description: IC: comparator; universal; Cmp: 2; 3÷32V; THT; DIP8; tube; 150nA
Type of integrated circuit: comparator
Kind of comparator: universal
Number of comparators: 2
Operating voltage: 3...32V
Mounting: THT
Case: DIP8
Operating temperature: 0...70°C
Input offset voltage: 9mV
Kind of package: tube
Input offset current: 150nA
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| NSR10F40NXT5G |
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Виробник: ONSEMI
Category: SMD Schottky diodes
Description: Diode: Schottky rectifying; 0502; SMD; 40V; 1A; reel,tape
Type of diode: Schottky rectifying
Case: 0502
Mounting: SMD
Max. off-state voltage: 40V
Load current: 1A
Semiconductor structure: single diode
Max. forward voltage: 0.49V
Max. forward impulse current: 18A
Kind of package: reel; tape
Category: SMD Schottky diodes
Description: Diode: Schottky rectifying; 0502; SMD; 40V; 1A; reel,tape
Type of diode: Schottky rectifying
Case: 0502
Mounting: SMD
Max. off-state voltage: 40V
Load current: 1A
Semiconductor structure: single diode
Max. forward voltage: 0.49V
Max. forward impulse current: 18A
Kind of package: reel; tape
на замовлення 4500 шт:
термін постачання 21-30 дні (днів)| Кількість | Ціна |
|---|---|
| 17+ | 25.82 грн |
| 23+ | 17.42 грн |
| 27+ | 15.11 грн |
| 100+ | 12.23 грн |
| 250+ | 10.63 грн |
| 500+ | 9.67 грн |
| 1000+ | 9.51 грн |
| NSR10F20NXT5G |
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Виробник: ONSEMI
Category: SMD Schottky diodes
Description: Diode: Schottky rectifying; 0502; SMD; 20V; 1A; reel,tape
Type of diode: Schottky rectifying
Case: 0502
Mounting: SMD
Max. off-state voltage: 20V
Load current: 1A
Semiconductor structure: single diode
Max. forward voltage: 0.45V
Max. forward impulse current: 18A
Kind of package: reel; tape
Category: SMD Schottky diodes
Description: Diode: Schottky rectifying; 0502; SMD; 20V; 1A; reel,tape
Type of diode: Schottky rectifying
Case: 0502
Mounting: SMD
Max. off-state voltage: 20V
Load current: 1A
Semiconductor structure: single diode
Max. forward voltage: 0.45V
Max. forward impulse current: 18A
Kind of package: reel; tape
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| NSR1030QMUTWG |
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Виробник: ONSEMI
Category: SMD/THT sing. phase diode bridge rectif.
Description: Bridge rectifier: single-phase; Urmax: 30V; If: 1A; Ifsm: 12A; uDFN4
Type of bridge rectifier: single-phase
Max. off-state voltage: 30V
Load current: 1A
Max. forward impulse current: 12A
Case: uDFN4
Electrical mounting: SMT
Kind of package: reel; tape
Max. forward voltage: 0.6V
Features of semiconductor devices: Schottky
Category: SMD/THT sing. phase diode bridge rectif.
Description: Bridge rectifier: single-phase; Urmax: 30V; If: 1A; Ifsm: 12A; uDFN4
Type of bridge rectifier: single-phase
Max. off-state voltage: 30V
Load current: 1A
Max. forward impulse current: 12A
Case: uDFN4
Electrical mounting: SMT
Kind of package: reel; tape
Max. forward voltage: 0.6V
Features of semiconductor devices: Schottky
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| NSR10F30NXT5G |
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Виробник: ONSEMI
Category: SMD Schottky diodes
Description: Diode: Schottky rectifying; 0502; SMD; 30V; 1A; reel,tape
Type of diode: Schottky rectifying
Case: 0502
Mounting: SMD
Max. off-state voltage: 30V
Load current: 1A
Semiconductor structure: single diode
Max. forward voltage: 0.47V
Max. forward impulse current: 18A
Kind of package: reel; tape
Category: SMD Schottky diodes
Description: Diode: Schottky rectifying; 0502; SMD; 30V; 1A; reel,tape
Type of diode: Schottky rectifying
Case: 0502
Mounting: SMD
Max. off-state voltage: 30V
Load current: 1A
Semiconductor structure: single diode
Max. forward voltage: 0.47V
Max. forward impulse current: 18A
Kind of package: reel; tape
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| BVSS84LT1G |
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Виробник: ONSEMI
Category: SMD P channel transistors
Description: Transistor: P-MOSFET; unipolar; -50V; -0.13A; 0.225W; SOT23
Kind of channel: enhancement
Type of transistor: P-MOSFET
Polarisation: unipolar
Case: SOT23
Mounting: SMD
Drain-source voltage: -50V
Drain current: -130mA
Power dissipation: 0.225W
On-state resistance: 10Ω
Kind of package: reel; tape
Gate-source voltage: ±20V
Category: SMD P channel transistors
Description: Transistor: P-MOSFET; unipolar; -50V; -0.13A; 0.225W; SOT23
Kind of channel: enhancement
Type of transistor: P-MOSFET
Polarisation: unipolar
Case: SOT23
Mounting: SMD
Drain-source voltage: -50V
Drain current: -130mA
Power dissipation: 0.225W
On-state resistance: 10Ω
Kind of package: reel; tape
Gate-source voltage: ±20V
на замовлення 3151 шт:
термін постачання 21-30 дні (днів)| Кількість | Ціна |
|---|---|
| 20+ | 22.38 грн |
| 26+ | 15.43 грн |
| 50+ | 10.87 грн |
| 100+ | 9.27 грн |
| 500+ | 6.63 грн |
| 1000+ | 5.83 грн |
| 3000+ | 5.59 грн |
| MM5Z12VT1G |
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Виробник: ONSEMI
Category: SMD Zener diodes
Description: Diode: Zener; 0.5W; 12V; SMD; reel,tape; SOD523F; single diode
Type of diode: Zener
Power dissipation: 0.5W
Zener voltage: 12V
Mounting: SMD
Tolerance: ±5%
Kind of package: reel; tape
Case: SOD523F
Semiconductor structure: single diode
Manufacturer series: MM5ZxxT1G
Category: SMD Zener diodes
Description: Diode: Zener; 0.5W; 12V; SMD; reel,tape; SOD523F; single diode
Type of diode: Zener
Power dissipation: 0.5W
Zener voltage: 12V
Mounting: SMD
Tolerance: ±5%
Kind of package: reel; tape
Case: SOD523F
Semiconductor structure: single diode
Manufacturer series: MM5ZxxT1G
на замовлення 5995 шт:
термін постачання 21-30 дні (днів)| Кількість | Ціна |
|---|---|
| 36+ | 12.05 грн |
| 55+ | 7.27 грн |
| 92+ | 4.36 грн |
| 113+ | 3.54 грн |
| 452+ | 2.09 грн |
| 1241+ | 1.97 грн |
| 3000+ | 1.90 грн |
| SZMM5Z12VT1G |
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Виробник: ONSEMI
Category: SMD Zener diodes
Description: Diode: Zener; 0.5W; 12V; SMD; reel,tape; SOD523F; single diode
Type of diode: Zener
Power dissipation: 0.5W
Zener voltage: 12V
Mounting: SMD
Tolerance: ±5%
Kind of package: reel; tape
Case: SOD523F
Semiconductor structure: single diode
Manufacturer series: MM5ZxxT1G
Application: automotive industry
Category: SMD Zener diodes
Description: Diode: Zener; 0.5W; 12V; SMD; reel,tape; SOD523F; single diode
Type of diode: Zener
Power dissipation: 0.5W
Zener voltage: 12V
Mounting: SMD
Tolerance: ±5%
Kind of package: reel; tape
Case: SOD523F
Semiconductor structure: single diode
Manufacturer series: MM5ZxxT1G
Application: automotive industry
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| MM5Z4717T1G |
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Виробник: ONSEMI
Category: SMD Zener diodes
Description: Diode: Zener; 0.5W; 43V; SMD; reel,tape; SOD523F; single diode
Type of diode: Zener
Power dissipation: 0.5W
Zener voltage: 43V
Mounting: SMD
Tolerance: ±5%
Kind of package: reel; tape
Case: SOD523F
Semiconductor structure: single diode
Manufacturer series: MM5Z4xxxT1G
Category: SMD Zener diodes
Description: Diode: Zener; 0.5W; 43V; SMD; reel,tape; SOD523F; single diode
Type of diode: Zener
Power dissipation: 0.5W
Zener voltage: 43V
Mounting: SMD
Tolerance: ±5%
Kind of package: reel; tape
Case: SOD523F
Semiconductor structure: single diode
Manufacturer series: MM5Z4xxxT1G
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| SZMM5Z4717T1G |
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Виробник: ONSEMI
Category: SMD Zener diodes
Description: Diode: Zener; 0.5W; 43V; SMD; reel,tape; SOD523F; single diode
Type of diode: Zener
Power dissipation: 0.5W
Zener voltage: 43V
Mounting: SMD
Tolerance: ±5%
Kind of package: reel; tape
Case: SOD523F
Semiconductor structure: single diode
Manufacturer series: MM5Z4xxxT1G
Application: automotive industry
Category: SMD Zener diodes
Description: Diode: Zener; 0.5W; 43V; SMD; reel,tape; SOD523F; single diode
Type of diode: Zener
Power dissipation: 0.5W
Zener voltage: 43V
Mounting: SMD
Tolerance: ±5%
Kind of package: reel; tape
Case: SOD523F
Semiconductor structure: single diode
Manufacturer series: MM5Z4xxxT1G
Application: automotive industry
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| SZMM5Z5V1T1G |
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Виробник: ONSEMI
Category: SMD Zener diodes
Description: Diode: Zener; 0.5W; 5.1V; SMD; reel,tape; SOD523F; single diode
Type of diode: Zener
Power dissipation: 0.5W
Zener voltage: 5.1V
Mounting: SMD
Tolerance: ±6%
Kind of package: reel; tape
Case: SOD523F
Semiconductor structure: single diode
Manufacturer series: MM5ZxxT1G
Application: automotive industry
Category: SMD Zener diodes
Description: Diode: Zener; 0.5W; 5.1V; SMD; reel,tape; SOD523F; single diode
Type of diode: Zener
Power dissipation: 0.5W
Zener voltage: 5.1V
Mounting: SMD
Tolerance: ±6%
Kind of package: reel; tape
Case: SOD523F
Semiconductor structure: single diode
Manufacturer series: MM5ZxxT1G
Application: automotive industry
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| MC79M15CDTRKG |
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Виробник: ONSEMI
Category: LDO fixed voltage regulators
Description: IC: voltage regulator; linear,fixed; -15V; 0.5A; DPAK; SMD; MC79M00
Type of integrated circuit: voltage regulator
Kind of voltage regulator: fixed; linear
Voltage drop: 1.1V
Output voltage: -15V
Output current: 0.5A
Case: DPAK
Mounting: SMD
Manufacturer series: MC79M00
Kind of package: reel; tape
Operating temperature: 0...125°C
Tolerance: ±4%
Number of channels: 1
Category: LDO fixed voltage regulators
Description: IC: voltage regulator; linear,fixed; -15V; 0.5A; DPAK; SMD; MC79M00
Type of integrated circuit: voltage regulator
Kind of voltage regulator: fixed; linear
Voltage drop: 1.1V
Output voltage: -15V
Output current: 0.5A
Case: DPAK
Mounting: SMD
Manufacturer series: MC79M00
Kind of package: reel; tape
Operating temperature: 0...125°C
Tolerance: ±4%
Number of channels: 1
на замовлення 2029 шт:
термін постачання 21-30 дні (днів)| Кількість | Ціна |
|---|---|
| 14+ | 32.71 грн |
| 20+ | 20.86 грн |
| 25+ | 18.94 грн |
| 100+ | 16.47 грн |
| 250+ | 15.99 грн |
| MC79M15CTG |
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Виробник: ONSEMI
Category: Fixed voltage regulators
Description: IC: voltage regulator; linear,fixed; -15V; 0.5A; TO220AB; THT; tube
Type of integrated circuit: voltage regulator
Kind of voltage regulator: fixed; linear
Voltage drop: 1.3V
Output voltage: -15V
Output current: 0.5A
Case: TO220AB
Mounting: THT
Manufacturer series: MC79M00
Kind of package: tube
Operating temperature: 0...125°C
Tolerance: ±4%
Number of channels: 1
Heatsink thickness: 0.508...0.61mm
Category: Fixed voltage regulators
Description: IC: voltage regulator; linear,fixed; -15V; 0.5A; TO220AB; THT; tube
Type of integrated circuit: voltage regulator
Kind of voltage regulator: fixed; linear
Voltage drop: 1.3V
Output voltage: -15V
Output current: 0.5A
Case: TO220AB
Mounting: THT
Manufacturer series: MC79M00
Kind of package: tube
Operating temperature: 0...125°C
Tolerance: ±4%
Number of channels: 1
Heatsink thickness: 0.508...0.61mm
на замовлення 119 шт:
термін постачання 21-30 дні (днів)| Кількість | Ціна |
|---|---|
| 13+ | 35.29 грн |
| 18+ | 23.42 грн |
| 25+ | 21.26 грн |
| 50+ | 20.22 грн |
| MC79M15BDTRKG |
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Виробник: ONSEMI
Category: LDO fixed voltage regulators
Description: IC: voltage regulator; linear,fixed; -15V; 0.5A; DPAK; SMD; MC79M00
Type of integrated circuit: voltage regulator
Kind of voltage regulator: fixed; linear
Voltage drop: 1.1V
Output voltage: -15V
Output current: 0.5A
Case: DPAK
Mounting: SMD
Manufacturer series: MC79M00
Kind of package: reel; tape
Operating temperature: -40...125°C
Tolerance: ±4%
Number of channels: 1
Category: LDO fixed voltage regulators
Description: IC: voltage regulator; linear,fixed; -15V; 0.5A; DPAK; SMD; MC79M00
Type of integrated circuit: voltage regulator
Kind of voltage regulator: fixed; linear
Voltage drop: 1.1V
Output voltage: -15V
Output current: 0.5A
Case: DPAK
Mounting: SMD
Manufacturer series: MC79M00
Kind of package: reel; tape
Operating temperature: -40...125°C
Tolerance: ±4%
Number of channels: 1
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| MC79M15BTG |
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Виробник: ONSEMI
Category: Fixed voltage regulators
Description: IC: voltage regulator; linear,fixed; -15V; 0.5A; TO220AB; THT; tube
Type of integrated circuit: voltage regulator
Kind of voltage regulator: fixed; linear
Output voltage: -15V
Output current: 0.5A
Case: TO220AB
Mounting: THT
Kind of package: tube
Number of channels: 1
Category: Fixed voltage regulators
Description: IC: voltage regulator; linear,fixed; -15V; 0.5A; TO220AB; THT; tube
Type of integrated circuit: voltage regulator
Kind of voltage regulator: fixed; linear
Output voltage: -15V
Output current: 0.5A
Case: TO220AB
Mounting: THT
Kind of package: tube
Number of channels: 1
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| NHP220SFT3G |
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Виробник: ONSEMI
Category: SMD universal diodes
Description: Diode: rectifying; SMD; 200V; 2A; 50ns; SOD123F; reel,tape
Mounting: SMD
Type of diode: rectifying
Kind of package: reel; tape
Semiconductor structure: single diode
Case: SOD123F
Reverse recovery time: 50ns
Load current: 2A
Max. off-state voltage: 200V
Category: SMD universal diodes
Description: Diode: rectifying; SMD; 200V; 2A; 50ns; SOD123F; reel,tape
Mounting: SMD
Type of diode: rectifying
Kind of package: reel; tape
Semiconductor structure: single diode
Case: SOD123F
Reverse recovery time: 50ns
Load current: 2A
Max. off-state voltage: 200V
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| NVTR4503NT1G |
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Виробник: ONSEMI
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 30V; 1.5A; 0.73W; SOT23
Polarisation: unipolar
Case: SOT23
Kind of channel: enhancement
Type of transistor: N-MOSFET
Mounting: SMD
Kind of package: reel; tape
Gate charge: 7nC
On-state resistance: 0.14Ω
Power dissipation: 0.73W
Drain current: 1.5A
Gate-source voltage: ±20V
Drain-source voltage: 30V
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 30V; 1.5A; 0.73W; SOT23
Polarisation: unipolar
Case: SOT23
Kind of channel: enhancement
Type of transistor: N-MOSFET
Mounting: SMD
Kind of package: reel; tape
Gate charge: 7nC
On-state resistance: 0.14Ω
Power dissipation: 0.73W
Drain current: 1.5A
Gate-source voltage: ±20V
Drain-source voltage: 30V
на замовлення 147 шт:
термін постачання 21-30 дні (днів)| Кількість | Ціна |
|---|---|
| 16+ | 28.40 грн |
| 39+ | 10.39 грн |
| 43+ | 9.51 грн |
| 50+ | 8.07 грн |
| 100+ | 7.59 грн |
| MC1496BDR2G |
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Виробник: ONSEMI
Category: RTV - audio integrated circuits
Description: IC: modulator/demodulator
Type of integrated circuit: modulator/demodulator
Category: RTV - audio integrated circuits
Description: IC: modulator/demodulator
Type of integrated circuit: modulator/demodulator
на замовлення 2500 шт:
термін постачання 21-30 дні (днів)| Кількість | Ціна |
|---|---|
| 2500+ | 12.48 грн |
| NCP114BSN330T1G |
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Виробник: ONSEMI
Category: LDO fixed voltage regulators
Description: IC: voltage regulator; LDO,linear,fixed; 3.3V; 225mA; TSSOP5; SMD
Manufacturer series: NCP114
Operating temperature: -40...85°C
Voltage drop: 0.135V
Output current: 0.225A
Output voltage: 3.3V
Number of channels: 1
Input voltage: 1.7...5.5V
Tolerance: ±2%
Kind of voltage regulator: fixed; LDO; linear
Kind of package: reel; tape
Mounting: SMD
Case: TSSOP5
Type of integrated circuit: voltage regulator
Category: LDO fixed voltage regulators
Description: IC: voltage regulator; LDO,linear,fixed; 3.3V; 225mA; TSSOP5; SMD
Manufacturer series: NCP114
Operating temperature: -40...85°C
Voltage drop: 0.135V
Output current: 0.225A
Output voltage: 3.3V
Number of channels: 1
Input voltage: 1.7...5.5V
Tolerance: ±2%
Kind of voltage regulator: fixed; LDO; linear
Kind of package: reel; tape
Mounting: SMD
Case: TSSOP5
Type of integrated circuit: voltage regulator
на замовлення 1320 шт:
термін постачання 21-30 дні (днів)| Кількість | Ціна |
|---|---|
| 39+ | 11.19 грн |
| 48+ | 8.47 грн |
| 55+ | 7.35 грн |
| 65+ | 6.23 грн |
| 73+ | 5.51 грн |
| 100+ | 5.04 грн |
| FCP16N60 |
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Виробник: ONSEMI
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 600V; 10.1A; Idm: 48A; 167W; TO220AB
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 600V
Drain current: 10.1A
Power dissipation: 167W
Case: TO220AB
Gate-source voltage: ±30V
On-state resistance: 0.26Ω
Mounting: THT
Kind of package: tube
Kind of channel: enhancement
Gate charge: 70nC
Pulsed drain current: 48A
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 600V; 10.1A; Idm: 48A; 167W; TO220AB
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 600V
Drain current: 10.1A
Power dissipation: 167W
Case: TO220AB
Gate-source voltage: ±30V
On-state resistance: 0.26Ω
Mounting: THT
Kind of package: tube
Kind of channel: enhancement
Gate charge: 70nC
Pulsed drain current: 48A
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| FCPF16N60 |
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Виробник: ONSEMI
Category: THT N channel transistors
Description: Transistor: N-MOSFET; SJ-MOSFET; unipolar; 600V; 10.1A; Idm: 48A
Type of transistor: N-MOSFET
Technology: SJ-MOSFET
Polarisation: unipolar
Drain-source voltage: 600V
Drain current: 10.1A
Power dissipation: 37.9W
Case: TO220FP
Gate-source voltage: ±30V
On-state resistance: 0.26Ω
Mounting: THT
Kind of package: tube
Kind of channel: enhancement
Gate charge: 70nC
Pulsed drain current: 48A
Category: THT N channel transistors
Description: Transistor: N-MOSFET; SJ-MOSFET; unipolar; 600V; 10.1A; Idm: 48A
Type of transistor: N-MOSFET
Technology: SJ-MOSFET
Polarisation: unipolar
Drain-source voltage: 600V
Drain current: 10.1A
Power dissipation: 37.9W
Case: TO220FP
Gate-source voltage: ±30V
On-state resistance: 0.26Ω
Mounting: THT
Kind of package: tube
Kind of channel: enhancement
Gate charge: 70nC
Pulsed drain current: 48A
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| FDC610PZ |
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Виробник: ONSEMI
Category: SMD P channel transistors
Description: Transistor: P-MOSFET; unipolar; -30V; -4.9A; 1.6W; SuperSOT-6
Mounting: SMD
Type of transistor: P-MOSFET
Case: SuperSOT-6
Polarisation: unipolar
Drain-source voltage: -30V
Drain current: -4.9A
Gate charge: 13nC
On-state resistance: 75mΩ
Gate-source voltage: ±25V
Power dissipation: 1.6W
Kind of channel: enhancement
Technology: PowerTrench®
Kind of package: reel; tape
Category: SMD P channel transistors
Description: Transistor: P-MOSFET; unipolar; -30V; -4.9A; 1.6W; SuperSOT-6
Mounting: SMD
Type of transistor: P-MOSFET
Case: SuperSOT-6
Polarisation: unipolar
Drain-source voltage: -30V
Drain current: -4.9A
Gate charge: 13nC
On-state resistance: 75mΩ
Gate-source voltage: ±25V
Power dissipation: 1.6W
Kind of channel: enhancement
Technology: PowerTrench®
Kind of package: reel; tape
на замовлення 462 шт:
термін постачання 21-30 дні (днів)| Кількість | Ціна |
|---|---|
| 11+ | 39.59 грн |
| 15+ | 26.78 грн |
| 100+ | 18.62 грн |
| 200+ | 16.70 грн |
| 250+ | 16.15 грн |
| NCP1246ALD065R2G |
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Виробник: ONSEMI
Category: Voltage regulators - DC/DC circuits
Description: IC: PMIC; AC/DC switcher,PWM controller; SO7; flyback
Type of integrated circuit: PMIC
Kind of integrated circuit: AC/DC switcher; PWM controller
Output current: 500...800mA
Frequency: 58...72kHz
Mounting: SMD
Case: SO7
Topology: flyback
Number of channels: 1
Operating temperature: -40...125°C
Operating voltage: 8.9...26.5V DC
Category: Voltage regulators - DC/DC circuits
Description: IC: PMIC; AC/DC switcher,PWM controller; SO7; flyback
Type of integrated circuit: PMIC
Kind of integrated circuit: AC/DC switcher; PWM controller
Output current: 500...800mA
Frequency: 58...72kHz
Mounting: SMD
Case: SO7
Topology: flyback
Number of channels: 1
Operating temperature: -40...125°C
Operating voltage: 8.9...26.5V DC
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| CAT5113VI-00-GT3 |
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Виробник: ONSEMI
Category: Digital potentiometers
Description: IC: digital potentiometer; 100kΩ; Up/Down Protocol; 5bit; SO8; SMD
Resistance: 100kΩ
Mounting: SMD
Operating temperature: -40...85°C
Interface: Up/Down Protocol
Type of integrated circuit: digital potentiometer
Kind of memory: non-volatile
Case: SO8
Max DNL: ±0.5LSB
Number of channels: 1
Max INL: ±1LSB
Supply voltage: 2.5...6V
Converter resolution: 5bit
Number of positions: 100
Category: Digital potentiometers
Description: IC: digital potentiometer; 100kΩ; Up/Down Protocol; 5bit; SO8; SMD
Resistance: 100kΩ
Mounting: SMD
Operating temperature: -40...85°C
Interface: Up/Down Protocol
Type of integrated circuit: digital potentiometer
Kind of memory: non-volatile
Case: SO8
Max DNL: ±0.5LSB
Number of channels: 1
Max INL: ±1LSB
Supply voltage: 2.5...6V
Converter resolution: 5bit
Number of positions: 100
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| FQD2N60CTM |
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Виробник: ONSEMI
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 600V; 1.14A; 44W; DPAK
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 600V
Drain current: 1.14A
Power dissipation: 44W
Case: DPAK
Gate-source voltage: ±30V
On-state resistance: 4.7Ω
Mounting: SMD
Gate charge: 12nC
Kind of package: reel; tape
Kind of channel: enhancement
Technology: QFET®
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 600V; 1.14A; 44W; DPAK
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 600V
Drain current: 1.14A
Power dissipation: 44W
Case: DPAK
Gate-source voltage: ±30V
On-state resistance: 4.7Ω
Mounting: SMD
Gate charge: 12nC
Kind of package: reel; tape
Kind of channel: enhancement
Technology: QFET®
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| NTR4501NT1G |
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Виробник: ONSEMI
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 20V; 2.4A; Idm: 10A; 1.25W; SOT23
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 20V
Drain current: 2.4A
Pulsed drain current: 10A
Power dissipation: 1.25W
Case: SOT23
Gate-source voltage: ±12V
On-state resistance: 0.105Ω
Mounting: SMD
Gate charge: 6nC
Kind of package: reel; tape
Kind of channel: enhancement
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 20V; 2.4A; Idm: 10A; 1.25W; SOT23
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 20V
Drain current: 2.4A
Pulsed drain current: 10A
Power dissipation: 1.25W
Case: SOT23
Gate-source voltage: ±12V
On-state resistance: 0.105Ω
Mounting: SMD
Gate charge: 6nC
Kind of package: reel; tape
Kind of channel: enhancement
на замовлення 8181 шт:
термін постачання 21-30 дні (днів)| Кількість | Ціна |
|---|---|
| 32+ | 13.77 грн |
| 45+ | 8.95 грн |
| 60+ | 6.68 грн |
| 100+ | 5.91 грн |
| 500+ | 4.50 грн |
| 1000+ | 4.08 грн |
| 1500+ | 3.80 грн |
| 3000+ | 3.74 грн |
| NTR4503NT1G |
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Виробник: ONSEMI
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 30V; 2.5A; Idm: 10A; 730mW; SOT23
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 30V
Drain current: 2.5A
Pulsed drain current: 10A
Power dissipation: 0.73W
Case: SOT23
Gate-source voltage: ±20V
On-state resistance: 0.11Ω
Mounting: SMD
Gate charge: 3.6nC
Kind of package: reel; tape
Kind of channel: enhancement
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 30V; 2.5A; Idm: 10A; 730mW; SOT23
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 30V
Drain current: 2.5A
Pulsed drain current: 10A
Power dissipation: 0.73W
Case: SOT23
Gate-source voltage: ±20V
On-state resistance: 0.11Ω
Mounting: SMD
Gate charge: 3.6nC
Kind of package: reel; tape
Kind of channel: enhancement
на замовлення 2846 шт:
термін постачання 21-30 дні (днів)| Кількість | Ціна |
|---|---|
| 39+ | 11.19 грн |
| 46+ | 8.87 грн |
| 55+ | 7.35 грн |
| 100+ | 6.71 грн |
| 250+ | 6.07 грн |
| 500+ | 5.59 грн |
| 1000+ | 5.28 грн |
| 1500+ | 5.12 грн |
| NDT452AP |
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Виробник: ONSEMI
Category: SMD P channel transistors
Description: Transistor: P-MOSFET; unipolar; -30V; -5A; 3W; SOT223
Type of transistor: P-MOSFET
Polarisation: unipolar
Drain-source voltage: -30V
Drain current: -5A
Power dissipation: 3W
Case: SOT223
Gate-source voltage: ±20V
On-state resistance: 0.13Ω
Mounting: SMD
Kind of package: reel; tape
Kind of channel: enhancement
Category: SMD P channel transistors
Description: Transistor: P-MOSFET; unipolar; -30V; -5A; 3W; SOT223
Type of transistor: P-MOSFET
Polarisation: unipolar
Drain-source voltage: -30V
Drain current: -5A
Power dissipation: 3W
Case: SOT223
Gate-source voltage: ±20V
On-state resistance: 0.13Ω
Mounting: SMD
Kind of package: reel; tape
Kind of channel: enhancement
на замовлення 4023 шт:
термін постачання 21-30 дні (днів)| Кількість | Ціна |
|---|---|
| 6+ | 82.63 грн |
| 7+ | 62.18 грн |
| 10+ | 56.03 грн |
| 23+ | 41.40 грн |
| 63+ | 39.16 грн |
| 500+ | 37.81 грн |
| MBR2035CT |
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Виробник: ONSEMI
Category: THT Schottky diodes
Description: Diode: Schottky rectifying; THT; 35V; 10Ax2; TO220AB; Ufmax: 0.95V
Type of diode: Schottky rectifying
Mounting: THT
Max. off-state voltage: 35V
Load current: 10A x2
Semiconductor structure: common cathode; double
Case: TO220AB
Kind of package: tube
Max. forward impulse current: 150A
Max. forward voltage: 0.95V
Max. load current: 20A
Category: THT Schottky diodes
Description: Diode: Schottky rectifying; THT; 35V; 10Ax2; TO220AB; Ufmax: 0.95V
Type of diode: Schottky rectifying
Mounting: THT
Max. off-state voltage: 35V
Load current: 10A x2
Semiconductor structure: common cathode; double
Case: TO220AB
Kind of package: tube
Max. forward impulse current: 150A
Max. forward voltage: 0.95V
Max. load current: 20A
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| MOCD207R2VM |
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Виробник: ONSEMI
Category: Optocouplers - analog output
Description: Optocoupler; SMD; Ch: 2; OUT: transistor; Uinsul: 2.5kV; Uce: 70V
Type of optocoupler: optocoupler
Mounting: SMD
Number of channels: 2
Kind of output: transistor
Insulation voltage: 2.5kV
Collector-emitter voltage: 70V
Case: SOIC8
Max. off-state voltage: 6V
Number of pins: 8
Operating temperature: -40...100°C
Load current: 60mA
Max. load current: 60mA
Category: Optocouplers - analog output
Description: Optocoupler; SMD; Ch: 2; OUT: transistor; Uinsul: 2.5kV; Uce: 70V
Type of optocoupler: optocoupler
Mounting: SMD
Number of channels: 2
Kind of output: transistor
Insulation voltage: 2.5kV
Collector-emitter voltage: 70V
Case: SOIC8
Max. off-state voltage: 6V
Number of pins: 8
Operating temperature: -40...100°C
Load current: 60mA
Max. load current: 60mA
на замовлення 2500 шт:
термін постачання 21-30 дні (днів)| Кількість | Ціна |
|---|---|
| 2500+ | 23.84 грн |


























