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FSUSB74MPX ONSEMI fsusb74-d.pdf Category: Analog multiplexers and switches
Description: IC: analog switch; multiplexer,USB switch; Ch: 2; MLP16; reel,tape
Type of integrated circuit: analog switch
Kind of integrated circuit: multiplexer; USB switch
Number of channels: 2
Case: MLP16
Supply voltage: 2.5...4.4V DC
Mounting: SMD
Kind of package: reel; tape
Operating temperature: -40...85°C
Kind of output: DP4T
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FSUSB242GEVB ONSEMI Category: Development kits - Unclassified
Description: FSUSB242GEVB
на замовлення 3 шт:
термін постачання 21-30 дні (днів)
1+9917.88 грн
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NCV78L05ABDR2G NCV78L05ABDR2G ONSEMI MC78LxxA_NCV78LxxA.PDF Category: LDO fixed voltage regulators
Description: IC: voltage regulator; LDO,linear,fixed; 5V; 0.1A; SO8; SMD; ±5%
Type of integrated circuit: voltage regulator
Kind of voltage regulator: fixed; LDO; linear
Voltage drop: 1.7V
Output voltage: 5V
Output current: 0.1A
Case: SO8
Mounting: SMD
Manufacturer series: MC78L00A
Kind of package: reel; tape
Operating temperature: -40...125°C
Tolerance: ±5%
Number of channels: 1
Application: automotive industry
Input voltage: 7...20V
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LM2903N LM2903N ONSEMI LM2903.pdf Category: THT comparators
Description: IC: comparator; universal; Cmp: 2; 2÷36V; THT; DIP8; tube; 200nA
Type of integrated circuit: comparator
Kind of comparator: universal
Number of comparators: 2
Mounting: THT
Case: DIP8
Operating temperature: -40...105°C
Input offset voltage: 15mV
Kind of package: tube
Input offset current: 200nA
Operating voltage: 2...36V
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FDMC7660 FDMC7660 ONSEMI FDMC7660.pdf Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 30V; 40A; 41W; PQFN8
Case: PQFN8
Kind of channel: enhancement
Mounting: SMD
Type of transistor: N-MOSFET
Technology: PowerTrench®
Kind of package: reel; tape
Polarisation: unipolar
Gate charge: 86nC
On-state resistance: 3.3mΩ
Gate-source voltage: ±20V
Drain-source voltage: 30V
Drain current: 40A
Power dissipation: 41W
на замовлення 2108 шт:
термін постачання 21-30 дні (днів)
7+70.89 грн
Мінімальне замовлення: 7
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MMSZ5260BT1G MMSZ5260BT1G ONSEMI MMSZ52xxT1G.PDF Category: SMD Zener diodes
Description: Diode: Zener; 0.5W; 43V; SMD; reel,tape; SOD123; single diode
Mounting: SMD
Kind of package: reel; tape
Type of diode: Zener
Semiconductor structure: single diode
Power dissipation: 0.5W
Tolerance: ±5%
Zener voltage: 43V
Manufacturer series: MMSZ52xxB
Case: SOD123
на замовлення 216 шт:
термін постачання 21-30 дні (днів)
63+7.18 грн
162+2.58 грн
205+2.03 грн
Мінімальне замовлення: 63
В кошику  од. на суму  грн.
MMBZ5260BLT1G ONSEMI MMBZ52xxBLT1G.PDF Category: SMD Zener diodes
Description: Diode: Zener; 0.3W; 43V; SMD; reel,tape; SOT23; single diode
Mounting: SMD
Kind of package: reel; tape
Type of diode: Zener
Semiconductor structure: single diode
Power dissipation: 0.3W
Tolerance: ±5%
Zener voltage: 43V
Manufacturer series: MMBZ52xxBLT1G
Case: SOT23
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SZBZX84C3V3LT1G ONSEMI BZX84B_BZX84C.PDF Category: SMD Zener diodes
Description: Diode: Zener; 0.3W; 3.3V; SMD; reel,tape; SOT23; single diode
Type of diode: Zener
Power dissipation: 0.3W
Zener voltage: 3.3V
Mounting: SMD
Tolerance: ±5%
Kind of package: reel; tape
Case: SOT23
Semiconductor structure: single diode
Manufacturer series: BZX84C
Application: automotive industry
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SZBZX84C3V3ET1G ONSEMI BZX84CxxET1G.PDF Category: SMD Zener diodes
Description: Diode: Zener; 0.3W; 3.3V; SMD; reel,tape; SOT23; single diode
Type of diode: Zener
Power dissipation: 0.3W
Zener voltage: 3.3V
Mounting: SMD
Tolerance: ±6%
Kind of package: reel; tape
Case: SOT23
Semiconductor structure: single diode
Manufacturer series: BZX84CxxET1G
Application: automotive industry
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LM393M LM393M ONSEMI LM2903.pdf Category: SMD comparators
Description: IC: comparator; universal; Cmp: 2; 2÷36V; SMT; SO8; tube; 150nA
Type of integrated circuit: comparator
Kind of comparator: universal
Number of comparators: 2
Operating voltage: 2...36V
Mounting: SMT
Case: SO8
Operating temperature: 0...70°C
Input offset voltage: 9mV
Input offset current: 150nA
Kind of package: tube
Kind of output: open collector
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NDS0610 NDS0610 ONSEMI NDS0610.pdf Category: SMD P channel transistors
Description: Transistor: P-MOSFET; unipolar; -60V; -0.12A; 0.36W; SOT23
Type of transistor: P-MOSFET
Polarisation: unipolar
Drain-source voltage: -60V
Drain current: -120mA
Power dissipation: 0.36W
Case: SOT23
On-state resistance: 10Ω
Mounting: SMD
Kind of package: reel; tape
Kind of channel: enhancement
на замовлення 675 шт:
термін постачання 21-30 дні (днів)
36+12.56 грн
46+9.25 грн
55+7.58 грн
100+6.93 грн
500+5.65 грн
Мінімальне замовлення: 36
В кошику  од. на суму  грн.
FQP11N40C FQP11N40C ONSEMI FQP11N40C.pdf Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 400V; 6.6A; 135W; TO220AB
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 400V
Drain current: 6.6A
Power dissipation: 135W
Case: TO220AB
Gate-source voltage: ±30V
On-state resistance: 530mΩ
Mounting: THT
Gate charge: 35nC
Kind of package: tube
Kind of channel: enhancement
Technology: QFET®
на замовлення 90 шт:
термін постачання 21-30 дні (днів)
3+149.86 грн
4+129.16 грн
10+117.49 грн
50+104.16 грн
Мінімальне замовлення: 3
В кошику  од. на суму  грн.
FQPF11N40C FQPF11N40C ONSEMI FAIRS45968-1.pdf?t.download=true&u=5oefqw Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 400V; 6.6A; Idm: 42A; 44W; TO220FP
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 400V
Drain current: 6.6A
Pulsed drain current: 42A
Power dissipation: 44W
Case: TO220FP
Gate-source voltage: ±30V
On-state resistance: 530mΩ
Mounting: THT
Gate charge: 35nC
Kind of package: tube
Kind of channel: enhancement
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BUX85G BUX85G ONSEMI BUX85.PDF Category: NPN THT transistors
Description: Transistor: NPN; bipolar; 1kV; 2A; 40W; TO220AB
Type of transistor: NPN
Polarisation: bipolar
Collector-emitter voltage: 1kV
Collector current: 2A
Power dissipation: 40W
Case: TO220AB
Mounting: THT
Frequency: 4MHz
Kind of package: tube
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MPSA56G MPSA56G ONSEMI MPSA56G.PDF Category: PNP THT transistors
Description: Transistor: PNP; bipolar; 80V; 0.5A; 0.625W; TO92
Type of transistor: PNP
Polarisation: bipolar
Collector-emitter voltage: 80V
Collector current: 0.5A
Power dissipation: 0.625W
Case: TO92
Mounting: THT
Kind of package: bulk
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PACDN042Y3R PACDN042Y3R ONSEMI PACDN04x.PDF Category: Protection diodes - arrays
Description: Diode: TVS array; unidirectional; SOT23; Ch: 2; reel,tape; ESD
Number of channels: 2
Mounting: SMD
Case: SOT23
Kind of package: reel; tape
Version: ESD
Semiconductor structure: unidirectional
Type of diode: TVS array
Max. off-state voltage: 5.5V
Application: automotive industry
на замовлення 492 шт:
термін постачання 21-30 дні (днів)
18+25.13 грн
25+16.83 грн
31+13.75 грн
100+9.83 грн
Мінімальне замовлення: 18
В кошику  од. на суму  грн.
FQP2N80 FQP2N80 ONSEMI fqp2n80-d.pdf Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 800V; 1.52A; Idm: 9.6A; 85W; TO220AB
Case: TO220AB
Mounting: THT
Kind of package: tube
Gate charge: 15nC
On-state resistance: 6.3Ω
Drain current: 1.52A
Pulsed drain current: 9.6A
Power dissipation: 85W
Gate-source voltage: ±30V
Drain-source voltage: 800V
Kind of channel: enhancement
Type of transistor: N-MOSFET
Polarisation: unipolar
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FQPF2N80 FQPF2N80 ONSEMI fqpf2n80-d.pdf Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 800V; 950mA; Idm: 6A; 35W; TO220FP
Case: TO220FP
Mounting: THT
Kind of package: tube
Gate charge: 15nC
On-state resistance: 6.3Ω
Drain current: 0.95A
Pulsed drain current: 6A
Power dissipation: 35W
Gate-source voltage: ±30V
Drain-source voltage: 800V
Kind of channel: enhancement
Type of transistor: N-MOSFET
Polarisation: unipolar
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FQPF2N80YDTU FQPF2N80YDTU ONSEMI fqpf2n80ydtu-d.pdf FAIRS45220-1.pdf?t.download=true&u=5oefqw Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 800V; 950mA; Idm: 6A; 35W; TO220FP
Case: TO220FP
Mounting: THT
Kind of package: tube
Gate charge: 15nC
On-state resistance: 6.3Ω
Drain current: 0.95A
Pulsed drain current: 6A
Power dissipation: 35W
Gate-source voltage: ±30V
Drain-source voltage: 800V
Kind of channel: enhancement
Type of transistor: N-MOSFET
Polarisation: unipolar
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FQD2N90TM FQD2N90TM ONSEMI fqu2n90tu_am002-d.pdf Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 900V; 1.08A; Idm: 6.8A; 50W; DPAK
Polarisation: unipolar
Gate charge: 15nC
On-state resistance: 7.2Ω
Drain current: 1.08A
Pulsed drain current: 6.8A
Gate-source voltage: ±30V
Power dissipation: 50W
Drain-source voltage: 900V
Case: DPAK
Kind of channel: enhancement
Type of transistor: N-MOSFET
Kind of package: reel; tape
Mounting: SMD
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FQU2N90TU-AM002 ONSEMI FAIR-S-A0000011405-1.pdf?t.download=true&u=5oefqw fqu2n90tu_am002-d.pdf Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 900V; 1.08A; Idm: 6.8A; 50W; IPAK
Polarisation: unipolar
Gate charge: 15nC
On-state resistance: 7.2Ω
Drain current: 1.08A
Pulsed drain current: 6.8A
Gate-source voltage: ±30V
Power dissipation: 50W
Drain-source voltage: 900V
Case: IPAK
Kind of channel: enhancement
Type of transistor: N-MOSFET
Kind of package: tube
Mounting: THT
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FQU2N90TU-WS ONSEMI fqu2n90tu_am002-d.pdf Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 900V; 1.08A; Idm: 6.8A; 50W; IPAK
Polarisation: unipolar
Gate charge: 15nC
On-state resistance: 7.2Ω
Drain current: 1.08A
Pulsed drain current: 6.8A
Gate-source voltage: ±30V
Power dissipation: 50W
Drain-source voltage: 900V
Case: IPAK
Kind of channel: enhancement
Type of transistor: N-MOSFET
Kind of package: tube
Mounting: THT
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FDP047AN08A0 FDP047AN08A0 ONSEMI fdh047an08a0-d.pdf Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 75V; 80A; 310W; TO220-3
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 75V
Drain current: 80A
Power dissipation: 310W
Case: TO220-3
Gate-source voltage: ±20V
On-state resistance: 11mΩ
Mounting: THT
Kind of package: tube
Kind of channel: enhancement
на замовлення 71 шт:
термін постачання 21-30 дні (днів)
2+260.24 грн
10+183.32 грн
50+150.82 грн
Мінімальне замовлення: 2
В кошику  од. на суму  грн.
MC33178DR2G MC33178DR2G ONSEMI MC33178DG.PDF Category: SMD operational amplifiers
Description: IC: operational amplifier; 5MHz; Ch: 2; ±2÷18VDC,4÷36VDC; SO8; 4mV
Mounting: SMT
Operating temperature: -40...85°C
Integrated circuit features: low power
Input offset voltage: 4mV
Voltage supply range: ± 2...18V DC; 4...36V DC
Slew rate: 2V/μs
Bandwidth: 5MHz
Kind of package: reel; tape
Case: SO8
Type of integrated circuit: operational amplifier
Number of channels: dual; 2
на замовлення 1270 шт:
термін постачання 21-30 дні (днів)
16+29.61 грн
21+20.58 грн
25+18.42 грн
100+15.50 грн
250+13.92 грн
500+13.33 грн
Мінімальне замовлення: 16
В кошику  од. на суму  грн.
2N6488G 2N6488G ONSEMI 2n6487-d.pdf Category: NPN THT transistors
Description: Transistor: NPN; bipolar; 80V; 15A; 75W; TO220AB
Case: TO220AB
Type of transistor: NPN
Kind of package: tube
Mounting: THT
Collector current: 15A
Current gain: 20...150
Power dissipation: 75W
Collector-emitter voltage: 80V
Frequency: 5MHz
Polarisation: bipolar
на замовлення 88 шт:
термін постачання 21-30 дні (днів)
7+64.61 грн
10+46.25 грн
50+38.83 грн
Мінімальне замовлення: 7
В кошику  од. на суму  грн.
2N6491G 2N6491G ONSEMI 2n6487-d.pdf description Category: PNP THT transistors
Description: Transistor: PNP; bipolar; 80V; 15A; 75W; TO220AB
Type of transistor: PNP
Polarisation: bipolar
Collector-emitter voltage: 80V
Collector current: 15A
Power dissipation: 75W
Case: TO220AB
Current gain: 20...150
Mounting: THT
Kind of package: tube
Frequency: 5MHz
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FJI5603DTU FJI5603DTU ONSEMI fji5603d-d.pdf Category: NPN THT transistors
Description: Transistor: NPN; bipolar; 800V; 3A; 100W; I2PAK
Case: I2PAK
Type of transistor: NPN
Kind of package: tube
Mounting: THT
Collector current: 3A
Current gain: 20...35
Power dissipation: 100W
Collector-emitter voltage: 800V
Frequency: 5MHz
Polarisation: bipolar
на замовлення 30 шт:
термін постачання 21-30 дні (днів)
5+104.99 грн
10+86.66 грн
Мінімальне замовлення: 5
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MUR1520G MUR1520G ONSEMI MUR15xx.PDF description Category: THT universal diodes
Description: Diode: rectifying; THT; 200V; 15A; tube; Ifsm: 200A; TO220-2; 35ns
Type of diode: rectifying
Mounting: THT
Max. off-state voltage: 200V
Load current: 15A
Semiconductor structure: single diode
Case: TO220-2
Max. forward impulse current: 200A
Kind of package: tube
Max. load current: 30A
Heatsink thickness: 1.14...1.39mm
Reverse recovery time: 35ns
на замовлення 103 шт:
термін постачання 21-30 дні (днів)
11+43.97 грн
100+40.66 грн
Мінімальне замовлення: 11
В кошику  од. на суму  грн.
1SMB5919BT3G 1SMB5919BT3G ONSEMI 1SMB59xxBT3G.PDF Category: SMD Zener diodes
Description: Diode: Zener; 3W; 5.6V; SMD; reel,tape; SMB; single diode
Type of diode: Zener
Power dissipation: 3W
Zener voltage: 5.6V
Mounting: SMD
Tolerance: ±5%
Kind of package: reel; tape
Case: SMB
Semiconductor structure: single diode
Manufacturer series: 1SMB59xxBT3G
на замовлення 6143 шт:
термін постачання 21-30 дні (днів)
20+22.43 грн
26+16.50 грн
30+14.17 грн
50+9.67 грн
100+8.25 грн
500+6.50 грн
Мінімальне замовлення: 20
В кошику  од. на суму  грн.
SZ1SMB5919BT3G ONSEMI 1SMB59xxBT3G.PDF Category: SMD Zener diodes
Description: Diode: Zener; 3W; 5.6V; SMD; reel,tape; SMB; single diode
Type of diode: Zener
Power dissipation: 3W
Zener voltage: 5.6V
Mounting: SMD
Tolerance: ±5%
Kind of package: reel; tape
Case: SMB
Semiconductor structure: single diode
Manufacturer series: 1SMB59xxBT3G
Application: automotive industry
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FDWS86368-F085 ONSEMI fdws86368_f085-d.pdf Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 80V; 80A; 214W; DFNW8
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 80V
Drain current: 80A
Power dissipation: 214W
Case: DFNW8
Gate-source voltage: ±20V
On-state resistance: 4.5mΩ
Mounting: SMD
Gate charge: 57nC
Kind of package: reel; tape
Kind of channel: enhancement
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FQP6N80C FQP6N80C ONSEMI FQP6N80C.pdf Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 800V; 3.2A; 158W; TO220AB
Type of transistor: N-MOSFET
Technology: QFET®
Polarisation: unipolar
Drain-source voltage: 800V
Drain current: 3.2A
Power dissipation: 158W
Case: TO220AB
Gate-source voltage: ±30V
On-state resistance: 2.5Ω
Mounting: THT
Gate charge: 30nC
Kind of package: tube
Kind of channel: enhancement
на замовлення 146 шт:
термін постачання 21-30 дні (днів)
3+154.35 грн
10+119.16 грн
50+100.83 грн
Мінімальне замовлення: 3
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FQPF6N80T FQPF6N80T ONSEMI fqpf6n80t-d.pdf Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 800V; 2.1A; Idm: 13.2A; 51W; TO220FP
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 800V
Drain current: 2.1A
Pulsed drain current: 13.2A
Power dissipation: 51W
Case: TO220FP
Gate-source voltage: ±30V
On-state resistance: 1.95Ω
Mounting: THT
Gate charge: 31nC
Kind of package: tube
Kind of channel: enhancement
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FCP099N60E ONSEMI fcp099n60e-d.pdf Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 600V; 37A; Idm: 111A; 357W; TO220-3
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 600V
Drain current: 37A
Power dissipation: 357W
Case: TO220-3
Gate-source voltage: ±20V
On-state resistance: 99mΩ
Mounting: THT
Kind of package: tube
Kind of channel: enhancement
Pulsed drain current: 111A
Gate charge: 88nC
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NTHL099N60S5 ONSEMI nthl099n60s5-d.pdf Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 600V; 33A; Idm: 95A; 184W; TO247-3
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 600V
Drain current: 33A
Power dissipation: 184W
Case: TO247-3
Gate-source voltage: ±30V
On-state resistance: 99mΩ
Mounting: THT
Kind of package: tube
Kind of channel: enhancement
Pulsed drain current: 95A
Gate charge: 48nC
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FCMT199N60 ONSEMI fcmt199n60-d.pdf Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 600V; 20.2A; Idm: 60.6A; 208W
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 600V
Drain current: 20.2A
Power dissipation: 208W
Case: Power88
Gate-source voltage: ±20V
On-state resistance: 0.199Ω
Mounting: SMD
Kind of channel: enhancement
Pulsed drain current: 60.6A
Gate charge: 57nC
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FCMT299N60 ONSEMI fcmt299n60-d.pdf Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 600V; 7.9A; Idm: 36A; 125W; Power88
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 600V
Drain current: 7.9A
Power dissipation: 125W
Case: Power88
Gate-source voltage: ±20V
On-state resistance: 0.299Ω
Mounting: SMD
Kind of package: reel; tape
Kind of channel: enhancement
Pulsed drain current: 36A
Gate charge: 51nC
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FDBL0210N80 ONSEMI fdbl0210n80-d.pdf Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 80V; 240A; 357W; H-PSOF8L
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 80V
Drain current: 240A
Power dissipation: 357W
Case: H-PSOF8L
Gate-source voltage: ±20V
On-state resistance: 2mΩ
Mounting: SMD
Kind of channel: enhancement
Gate charge: 130nC
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FAN7388MX ONSEMI fan7388-d.pdf Category: Buffers, transceivers, drivers
Description: Transistor: N-MOSFET; unipolar; SO20; 10÷20V
Kind of package: reel; tape
Kind of channel: enhancement
Case: SO20
Mounting: SMD
Type of transistor: N-MOSFET
Polarisation: unipolar
Operating temperature: -40...150°C
Output current: 350...650mA
Supply voltage: 10...20V
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MJ15023G MJ15023G ONSEMI MJ15023G.PDF description Category: PNP THT transistors
Description: Transistor: PNP; bipolar; 200V; 16A; 250W; TO3
Kind of package: in-tray
Mounting: THT
Type of transistor: PNP
Case: TO3
Collector current: 16A
Collector-emitter voltage: 200V
Power dissipation: 250W
Frequency: 4MHz
Polarisation: bipolar
на замовлення 42 шт:
термін постачання 21-30 дні (днів)
1+456.77 грн
5+394.14 грн
10+379.14 грн
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BZX84C12 ONSEMI BZX84Cxx.pdf Category: SMD Zener diodes
Description: Diode: Zener; 0.3W; 12V; SMD; reel,tape; SOT23; single diode; BZX84C
Type of diode: Zener
Power dissipation: 0.3W
Zener voltage: 12V
Mounting: SMD
Tolerance: ±5%
Kind of package: reel; tape
Case: SOT23
Semiconductor structure: single diode
Manufacturer series: BZX84C
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SZBZX84C12LT1G ONSEMI BZX84B_BZX84C.PDF Category: SMD Zener diodes
Description: Diode: Zener; 0.3W; 12V; SMD; reel,tape; SOT23; single diode; BZX84C
Type of diode: Zener
Power dissipation: 0.3W
Zener voltage: 12V
Mounting: SMD
Tolerance: ±5%
Kind of package: reel; tape
Case: SOT23
Semiconductor structure: single diode
Manufacturer series: BZX84C
Application: automotive industry
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SZBZX84C12ET1G ONSEMI BZX84CxxET1G.PDF Category: SMD Zener diodes
Description: Diode: Zener; 0.3W; 12V; SMD; reel,tape; SOT23; single diode
Type of diode: Zener
Power dissipation: 0.3W
Zener voltage: 12V
Mounting: SMD
Tolerance: ±5%
Kind of package: reel; tape
Case: SOT23
Semiconductor structure: single diode
Manufacturer series: BZX84CxxET1G
Application: automotive industry
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MC10H125PG MC10H125PG ONSEMI MC10H125FNG.pdf Category: Level translators
Description: IC: digital; non-inverting,logic level voltage translator; Ch: 4
Mounting: THT
Operating temperature: 0...75°C
Number of outputs: 4
Number of channels: 4
Number of inputs: 8
Kind of package: tube
Manufacturer series: 10H
Case: DIP16
Type of integrated circuit: digital
Kind of integrated circuit: logic level voltage translator; non-inverting
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MC10H124FNG MC10H124FNG ONSEMI MC10H124FNG.pdf Category: Level translators
Description: IC: digital; logic level voltage translator; Ch: 4; SMD; PLCC20
Mounting: SMD
Operating temperature: 0...75°C
Number of outputs: 8
Number of channels: 4
Number of inputs: 5
Kind of package: tube
Manufacturer series: 10H
Case: PLCC20
Type of integrated circuit: digital
Kind of integrated circuit: logic level voltage translator
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MC10H124FNR2G MC10H124FNR2G ONSEMI MC10H124FNG.pdf Category: Level translators
Description: IC: digital; logic level voltage translator; Ch: 4; SMD; PLCC20
Mounting: SMD
Operating temperature: 0...75°C
Number of outputs: 8
Number of channels: 4
Number of inputs: 5
Kind of package: reel; tape
Manufacturer series: 10H
Case: PLCC20
Type of integrated circuit: digital
Kind of integrated circuit: logic level voltage translator
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MC10H125FNG MC10H125FNG ONSEMI MC10H125FNG.pdf Category: Level translators
Description: IC: digital; non-inverting,logic level voltage translator; Ch: 4
Mounting: SMD
Operating temperature: 0...75°C
Number of outputs: 4
Number of channels: 4
Number of inputs: 8
Kind of package: tube
Manufacturer series: 10H
Case: PLCC20
Type of integrated circuit: digital
Kind of integrated circuit: logic level voltage translator; non-inverting
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MC10H125FNR2G MC10H125FNR2G ONSEMI MC10H125FNG.pdf Category: Level translators
Description: IC: digital; non-inverting,logic level voltage translator; Ch: 4
Mounting: SMD
Operating temperature: 0...75°C
Number of outputs: 4
Number of channels: 4
Number of inputs: 8
Kind of package: reel; tape
Manufacturer series: 10H
Case: PLCC20
Type of integrated circuit: digital
Kind of integrated circuit: logic level voltage translator; non-inverting
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NSVR201MXT5G ONSEMI nsvr201mx-d.pdf Category: SMD Schottky diodes
Description: Diode: Schottky switching; X2DFN2; SMD; 2V; 50mA; reel,tape
Type of diode: Schottky switching
Case: X2DFN2
Mounting: SMD
Max. off-state voltage: 2V
Load current: 50mA
Semiconductor structure: single diode
Max. forward voltage: 0.32V
Kind of package: reel; tape
Application: automotive industry
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CAV24C32WE-GT3 ONSEMI CAV24C32-D.pdf Category: Serial EEPROM memories - integ. circ.
Description: IC: EEPROM memory; 32kbEEPROM; I2C; 4kx8bit; 2.5÷5.5V; 400kHz
Type of integrated circuit: EEPROM memory
Kind of memory: EEPROM
Memory: 32kb EEPROM
Interface: I2C
Memory organisation: 4kx8bit
Operating voltage: 2.5...5.5V
Clock frequency: 400kHz
Mounting: SMD
Case: SOIC8
Kind of interface: serial
Operating temperature: -40...125°C
Access time: 900ns
Kind of package: reel; tape
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NVMYS011N04CTWG ONSEMI nvmys011n04c-d.pdf Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 40V; 35A; Idm: 173A; 9.1W; LFPAK56
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 40V
Drain current: 35A
Pulsed drain current: 173A
Power dissipation: 9.1W
Case: LFPAK56
Gate-source voltage: ±20V
On-state resistance: 12mΩ
Mounting: SMD
Gate charge: 7.9nC
Kind of package: reel; tape
Kind of channel: enhancement
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FGY100T65SCDT ONSEMI fgy100t65scdt-d.pdf Category: THT IGBT transistors
Description: Transistor: IGBT; 650V; 100A; 375W; TO247-3
Mounting: THT
Type of transistor: IGBT
Case: TO247-3
Gate charge: 157nC
Power dissipation: 375W
Gate-emitter voltage: ±25V
Collector current: 100A
Pulsed collector current: 300A
Collector-emitter voltage: 650V
Kind of package: tube
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FDMS8025S ONSEMI FAIR-S-A0002363775-1.pdf?t.download=true&u=5oefqw fdms8025s-d.pdf Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 30V; 49A; Idm: 100A; 50W; Power56
Mounting: SMD
Kind of channel: enhancement
Type of transistor: N-MOSFET
Case: Power56
Polarisation: unipolar
Gate-source voltage: ±20V
Gate charge: 47nC
On-state resistance: 4mΩ
Power dissipation: 50W
Drain current: 49A
Drain-source voltage: 30V
Pulsed drain current: 100A
Kind of package: reel; tape
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FCH070N60E ONSEMI fch070n60e-d.pdf Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 600V; 33A; Idm: 156A; 481W; TO247
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 600V
Drain current: 33A
Power dissipation: 481W
Case: TO247
Gate-source voltage: ±20V
On-state resistance: 58mΩ
Mounting: THT
Gate charge: 128nC
Kind of package: tube
Kind of channel: enhancement
Pulsed drain current: 156A
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FCH170N60 ONSEMI fch170n60-d.pdf ONSM-S-A0003584973-1.pdf?t.download=true&u=5oefqw Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 600V; 14A; Idm: 66A; 227W; TO247
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 600V
Drain current: 14A
Power dissipation: 227W
Case: TO247
Gate-source voltage: ±20V
On-state resistance: 0.15Ω
Mounting: THT
Gate charge: 42nC
Kind of package: tube
Kind of channel: enhancement
Pulsed drain current: 66A
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FCP170N60 ONSEMI FAIR-S-A0002365465-1.pdf?t.download=true&u=5oefqw fcp170n60-d.pdf Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 600V; 22A; Idm: 66A; 227W; TO220-3
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 600V
Drain current: 22A
Power dissipation: 227W
Case: TO220-3
Gate-source voltage: ±20V
On-state resistance: 0.17Ω
Mounting: THT
Gate charge: 42nC
Kind of package: tube
Kind of channel: enhancement
Pulsed drain current: 66A
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FDB0170N607L ONSEMI fdb0170n607l-d.pdf Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 60V; 300A; Idm: 1620A; 250W; D2PAK-7
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 60V
Drain current: 300A
Power dissipation: 250W
Case: D2PAK-7
Gate-source voltage: ±20V
On-state resistance: 1.4mΩ
Mounting: SMD
Gate charge: 173nC
Kind of package: reel; tape
Kind of channel: enhancement
Pulsed drain current: 1620A
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NUF6401MNT1G ONSEMI nuf6401-d.pdf Category: Protection diodes - arrays
Description: Diode: TVS array; bidirectional; DFN12; Ch: 6; reel,tape
Mounting: SMD
Kind of package: reel; tape
Type of diode: TVS array
Number of channels: 6
Case: DFN12
Semiconductor structure: bidirectional
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NUF6400MNTBG ONSEMI nuf6400mn-d.pdf Category: Protection diodes - arrays
Description: Diode: TVS array; bidirectional; DFN12; Ch: 6; reel,tape
Mounting: SMD
Kind of package: reel; tape
Type of diode: TVS array
Number of channels: 6
Case: DFN12
Semiconductor structure: bidirectional
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BAS20LT1G BAS20LT1G ONSEMI ZMP_60970.pdf Category: SMD universal diodes
Description: Diode: switching; SMD; 200V; 0.2A; 50ns; SOT23; Ufmax: 1.25V
Type of diode: switching
Mounting: SMD
Max. off-state voltage: 200V
Load current: 0.2A
Reverse recovery time: 50ns
Semiconductor structure: single diode
Capacitance: 5pF
Case: SOT23
Max. forward voltage: 1.25V
Kind of package: reel; tape
на замовлення 1033 шт:
термін постачання 21-30 дні (днів)
72+6.28 грн
117+3.58 грн
162+2.58 грн
200+2.27 грн
500+1.87 грн
1000+1.55 грн
Мінімальне замовлення: 72
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FSUSB74MPX fsusb74-d.pdf
Виробник: ONSEMI
Category: Analog multiplexers and switches
Description: IC: analog switch; multiplexer,USB switch; Ch: 2; MLP16; reel,tape
Type of integrated circuit: analog switch
Kind of integrated circuit: multiplexer; USB switch
Number of channels: 2
Case: MLP16
Supply voltage: 2.5...4.4V DC
Mounting: SMD
Kind of package: reel; tape
Operating temperature: -40...85°C
Kind of output: DP4T
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FSUSB242GEVB
Виробник: ONSEMI
Category: Development kits - Unclassified
Description: FSUSB242GEVB
на замовлення 3 шт:
термін постачання 21-30 дні (днів)
Кількість Ціна
1+9917.88 грн
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NCV78L05ABDR2G MC78LxxA_NCV78LxxA.PDF
NCV78L05ABDR2G
Виробник: ONSEMI
Category: LDO fixed voltage regulators
Description: IC: voltage regulator; LDO,linear,fixed; 5V; 0.1A; SO8; SMD; ±5%
Type of integrated circuit: voltage regulator
Kind of voltage regulator: fixed; LDO; linear
Voltage drop: 1.7V
Output voltage: 5V
Output current: 0.1A
Case: SO8
Mounting: SMD
Manufacturer series: MC78L00A
Kind of package: reel; tape
Operating temperature: -40...125°C
Tolerance: ±5%
Number of channels: 1
Application: automotive industry
Input voltage: 7...20V
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LM2903N LM2903.pdf
LM2903N
Виробник: ONSEMI
Category: THT comparators
Description: IC: comparator; universal; Cmp: 2; 2÷36V; THT; DIP8; tube; 200nA
Type of integrated circuit: comparator
Kind of comparator: universal
Number of comparators: 2
Mounting: THT
Case: DIP8
Operating temperature: -40...105°C
Input offset voltage: 15mV
Kind of package: tube
Input offset current: 200nA
Operating voltage: 2...36V
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FDMC7660 FDMC7660.pdf
FDMC7660
Виробник: ONSEMI
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 30V; 40A; 41W; PQFN8
Case: PQFN8
Kind of channel: enhancement
Mounting: SMD
Type of transistor: N-MOSFET
Technology: PowerTrench®
Kind of package: reel; tape
Polarisation: unipolar
Gate charge: 86nC
On-state resistance: 3.3mΩ
Gate-source voltage: ±20V
Drain-source voltage: 30V
Drain current: 40A
Power dissipation: 41W
на замовлення 2108 шт:
термін постачання 21-30 дні (днів)
Кількість Ціна
7+70.89 грн
Мінімальне замовлення: 7
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MMSZ5260BT1G MMSZ52xxT1G.PDF
MMSZ5260BT1G
Виробник: ONSEMI
Category: SMD Zener diodes
Description: Diode: Zener; 0.5W; 43V; SMD; reel,tape; SOD123; single diode
Mounting: SMD
Kind of package: reel; tape
Type of diode: Zener
Semiconductor structure: single diode
Power dissipation: 0.5W
Tolerance: ±5%
Zener voltage: 43V
Manufacturer series: MMSZ52xxB
Case: SOD123
на замовлення 216 шт:
термін постачання 21-30 дні (днів)
Кількість Ціна
63+7.18 грн
162+2.58 грн
205+2.03 грн
Мінімальне замовлення: 63
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MMBZ5260BLT1G MMBZ52xxBLT1G.PDF
Виробник: ONSEMI
Category: SMD Zener diodes
Description: Diode: Zener; 0.3W; 43V; SMD; reel,tape; SOT23; single diode
Mounting: SMD
Kind of package: reel; tape
Type of diode: Zener
Semiconductor structure: single diode
Power dissipation: 0.3W
Tolerance: ±5%
Zener voltage: 43V
Manufacturer series: MMBZ52xxBLT1G
Case: SOT23
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SZBZX84C3V3LT1G BZX84B_BZX84C.PDF
Виробник: ONSEMI
Category: SMD Zener diodes
Description: Diode: Zener; 0.3W; 3.3V; SMD; reel,tape; SOT23; single diode
Type of diode: Zener
Power dissipation: 0.3W
Zener voltage: 3.3V
Mounting: SMD
Tolerance: ±5%
Kind of package: reel; tape
Case: SOT23
Semiconductor structure: single diode
Manufacturer series: BZX84C
Application: automotive industry
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SZBZX84C3V3ET1G BZX84CxxET1G.PDF
Виробник: ONSEMI
Category: SMD Zener diodes
Description: Diode: Zener; 0.3W; 3.3V; SMD; reel,tape; SOT23; single diode
Type of diode: Zener
Power dissipation: 0.3W
Zener voltage: 3.3V
Mounting: SMD
Tolerance: ±6%
Kind of package: reel; tape
Case: SOT23
Semiconductor structure: single diode
Manufacturer series: BZX84CxxET1G
Application: automotive industry
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LM393M LM2903.pdf
LM393M
Виробник: ONSEMI
Category: SMD comparators
Description: IC: comparator; universal; Cmp: 2; 2÷36V; SMT; SO8; tube; 150nA
Type of integrated circuit: comparator
Kind of comparator: universal
Number of comparators: 2
Operating voltage: 2...36V
Mounting: SMT
Case: SO8
Operating temperature: 0...70°C
Input offset voltage: 9mV
Input offset current: 150nA
Kind of package: tube
Kind of output: open collector
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NDS0610 NDS0610.pdf
NDS0610
Виробник: ONSEMI
Category: SMD P channel transistors
Description: Transistor: P-MOSFET; unipolar; -60V; -0.12A; 0.36W; SOT23
Type of transistor: P-MOSFET
Polarisation: unipolar
Drain-source voltage: -60V
Drain current: -120mA
Power dissipation: 0.36W
Case: SOT23
On-state resistance: 10Ω
Mounting: SMD
Kind of package: reel; tape
Kind of channel: enhancement
на замовлення 675 шт:
термін постачання 21-30 дні (днів)
Кількість Ціна
36+12.56 грн
46+9.25 грн
55+7.58 грн
100+6.93 грн
500+5.65 грн
Мінімальне замовлення: 36
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FQP11N40C FQP11N40C.pdf
FQP11N40C
Виробник: ONSEMI
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 400V; 6.6A; 135W; TO220AB
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 400V
Drain current: 6.6A
Power dissipation: 135W
Case: TO220AB
Gate-source voltage: ±30V
On-state resistance: 530mΩ
Mounting: THT
Gate charge: 35nC
Kind of package: tube
Kind of channel: enhancement
Technology: QFET®
на замовлення 90 шт:
термін постачання 21-30 дні (днів)
Кількість Ціна
3+149.86 грн
4+129.16 грн
10+117.49 грн
50+104.16 грн
Мінімальне замовлення: 3
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FQPF11N40C FAIRS45968-1.pdf?t.download=true&u=5oefqw
FQPF11N40C
Виробник: ONSEMI
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 400V; 6.6A; Idm: 42A; 44W; TO220FP
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 400V
Drain current: 6.6A
Pulsed drain current: 42A
Power dissipation: 44W
Case: TO220FP
Gate-source voltage: ±30V
On-state resistance: 530mΩ
Mounting: THT
Gate charge: 35nC
Kind of package: tube
Kind of channel: enhancement
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BUX85G BUX85.PDF
BUX85G
Виробник: ONSEMI
Category: NPN THT transistors
Description: Transistor: NPN; bipolar; 1kV; 2A; 40W; TO220AB
Type of transistor: NPN
Polarisation: bipolar
Collector-emitter voltage: 1kV
Collector current: 2A
Power dissipation: 40W
Case: TO220AB
Mounting: THT
Frequency: 4MHz
Kind of package: tube
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MPSA56G MPSA56G.PDF
MPSA56G
Виробник: ONSEMI
Category: PNP THT transistors
Description: Transistor: PNP; bipolar; 80V; 0.5A; 0.625W; TO92
Type of transistor: PNP
Polarisation: bipolar
Collector-emitter voltage: 80V
Collector current: 0.5A
Power dissipation: 0.625W
Case: TO92
Mounting: THT
Kind of package: bulk
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PACDN042Y3R PACDN04x.PDF
PACDN042Y3R
Виробник: ONSEMI
Category: Protection diodes - arrays
Description: Diode: TVS array; unidirectional; SOT23; Ch: 2; reel,tape; ESD
Number of channels: 2
Mounting: SMD
Case: SOT23
Kind of package: reel; tape
Version: ESD
Semiconductor structure: unidirectional
Type of diode: TVS array
Max. off-state voltage: 5.5V
Application: automotive industry
на замовлення 492 шт:
термін постачання 21-30 дні (днів)
Кількість Ціна
18+25.13 грн
25+16.83 грн
31+13.75 грн
100+9.83 грн
Мінімальне замовлення: 18
В кошику  од. на суму  грн.
FQP2N80 fqp2n80-d.pdf
FQP2N80
Виробник: ONSEMI
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 800V; 1.52A; Idm: 9.6A; 85W; TO220AB
Case: TO220AB
Mounting: THT
Kind of package: tube
Gate charge: 15nC
On-state resistance: 6.3Ω
Drain current: 1.52A
Pulsed drain current: 9.6A
Power dissipation: 85W
Gate-source voltage: ±30V
Drain-source voltage: 800V
Kind of channel: enhancement
Type of transistor: N-MOSFET
Polarisation: unipolar
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FQPF2N80 fqpf2n80-d.pdf
FQPF2N80
Виробник: ONSEMI
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 800V; 950mA; Idm: 6A; 35W; TO220FP
Case: TO220FP
Mounting: THT
Kind of package: tube
Gate charge: 15nC
On-state resistance: 6.3Ω
Drain current: 0.95A
Pulsed drain current: 6A
Power dissipation: 35W
Gate-source voltage: ±30V
Drain-source voltage: 800V
Kind of channel: enhancement
Type of transistor: N-MOSFET
Polarisation: unipolar
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FQPF2N80YDTU fqpf2n80ydtu-d.pdf FAIRS45220-1.pdf?t.download=true&u=5oefqw
FQPF2N80YDTU
Виробник: ONSEMI
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 800V; 950mA; Idm: 6A; 35W; TO220FP
Case: TO220FP
Mounting: THT
Kind of package: tube
Gate charge: 15nC
On-state resistance: 6.3Ω
Drain current: 0.95A
Pulsed drain current: 6A
Power dissipation: 35W
Gate-source voltage: ±30V
Drain-source voltage: 800V
Kind of channel: enhancement
Type of transistor: N-MOSFET
Polarisation: unipolar
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FQD2N90TM fqu2n90tu_am002-d.pdf
FQD2N90TM
Виробник: ONSEMI
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 900V; 1.08A; Idm: 6.8A; 50W; DPAK
Polarisation: unipolar
Gate charge: 15nC
On-state resistance: 7.2Ω
Drain current: 1.08A
Pulsed drain current: 6.8A
Gate-source voltage: ±30V
Power dissipation: 50W
Drain-source voltage: 900V
Case: DPAK
Kind of channel: enhancement
Type of transistor: N-MOSFET
Kind of package: reel; tape
Mounting: SMD
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FQU2N90TU-AM002 FAIR-S-A0000011405-1.pdf?t.download=true&u=5oefqw fqu2n90tu_am002-d.pdf
Виробник: ONSEMI
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 900V; 1.08A; Idm: 6.8A; 50W; IPAK
Polarisation: unipolar
Gate charge: 15nC
On-state resistance: 7.2Ω
Drain current: 1.08A
Pulsed drain current: 6.8A
Gate-source voltage: ±30V
Power dissipation: 50W
Drain-source voltage: 900V
Case: IPAK
Kind of channel: enhancement
Type of transistor: N-MOSFET
Kind of package: tube
Mounting: THT
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FQU2N90TU-WS fqu2n90tu_am002-d.pdf
Виробник: ONSEMI
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 900V; 1.08A; Idm: 6.8A; 50W; IPAK
Polarisation: unipolar
Gate charge: 15nC
On-state resistance: 7.2Ω
Drain current: 1.08A
Pulsed drain current: 6.8A
Gate-source voltage: ±30V
Power dissipation: 50W
Drain-source voltage: 900V
Case: IPAK
Kind of channel: enhancement
Type of transistor: N-MOSFET
Kind of package: tube
Mounting: THT
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FDP047AN08A0 fdh047an08a0-d.pdf
FDP047AN08A0
Виробник: ONSEMI
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 75V; 80A; 310W; TO220-3
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 75V
Drain current: 80A
Power dissipation: 310W
Case: TO220-3
Gate-source voltage: ±20V
On-state resistance: 11mΩ
Mounting: THT
Kind of package: tube
Kind of channel: enhancement
на замовлення 71 шт:
термін постачання 21-30 дні (днів)
Кількість Ціна
2+260.24 грн
10+183.32 грн
50+150.82 грн
Мінімальне замовлення: 2
В кошику  од. на суму  грн.
MC33178DR2G MC33178DG.PDF
MC33178DR2G
Виробник: ONSEMI
Category: SMD operational amplifiers
Description: IC: operational amplifier; 5MHz; Ch: 2; ±2÷18VDC,4÷36VDC; SO8; 4mV
Mounting: SMT
Operating temperature: -40...85°C
Integrated circuit features: low power
Input offset voltage: 4mV
Voltage supply range: ± 2...18V DC; 4...36V DC
Slew rate: 2V/μs
Bandwidth: 5MHz
Kind of package: reel; tape
Case: SO8
Type of integrated circuit: operational amplifier
Number of channels: dual; 2
на замовлення 1270 шт:
термін постачання 21-30 дні (днів)
Кількість Ціна
16+29.61 грн
21+20.58 грн
25+18.42 грн
100+15.50 грн
250+13.92 грн
500+13.33 грн
Мінімальне замовлення: 16
В кошику  од. на суму  грн.
2N6488G 2n6487-d.pdf
2N6488G
Виробник: ONSEMI
Category: NPN THT transistors
Description: Transistor: NPN; bipolar; 80V; 15A; 75W; TO220AB
Case: TO220AB
Type of transistor: NPN
Kind of package: tube
Mounting: THT
Collector current: 15A
Current gain: 20...150
Power dissipation: 75W
Collector-emitter voltage: 80V
Frequency: 5MHz
Polarisation: bipolar
на замовлення 88 шт:
термін постачання 21-30 дні (днів)
Кількість Ціна
7+64.61 грн
10+46.25 грн
50+38.83 грн
Мінімальне замовлення: 7
В кошику  од. на суму  грн.
2N6491G description 2n6487-d.pdf
2N6491G
Виробник: ONSEMI
Category: PNP THT transistors
Description: Transistor: PNP; bipolar; 80V; 15A; 75W; TO220AB
Type of transistor: PNP
Polarisation: bipolar
Collector-emitter voltage: 80V
Collector current: 15A
Power dissipation: 75W
Case: TO220AB
Current gain: 20...150
Mounting: THT
Kind of package: tube
Frequency: 5MHz
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FJI5603DTU fji5603d-d.pdf
FJI5603DTU
Виробник: ONSEMI
Category: NPN THT transistors
Description: Transistor: NPN; bipolar; 800V; 3A; 100W; I2PAK
Case: I2PAK
Type of transistor: NPN
Kind of package: tube
Mounting: THT
Collector current: 3A
Current gain: 20...35
Power dissipation: 100W
Collector-emitter voltage: 800V
Frequency: 5MHz
Polarisation: bipolar
на замовлення 30 шт:
термін постачання 21-30 дні (днів)
Кількість Ціна
5+104.99 грн
10+86.66 грн
Мінімальне замовлення: 5
В кошику  од. на суму  грн.
MUR1520G description MUR15xx.PDF
MUR1520G
Виробник: ONSEMI
Category: THT universal diodes
Description: Diode: rectifying; THT; 200V; 15A; tube; Ifsm: 200A; TO220-2; 35ns
Type of diode: rectifying
Mounting: THT
Max. off-state voltage: 200V
Load current: 15A
Semiconductor structure: single diode
Case: TO220-2
Max. forward impulse current: 200A
Kind of package: tube
Max. load current: 30A
Heatsink thickness: 1.14...1.39mm
Reverse recovery time: 35ns
на замовлення 103 шт:
термін постачання 21-30 дні (днів)
Кількість Ціна
11+43.97 грн
100+40.66 грн
Мінімальне замовлення: 11
В кошику  од. на суму  грн.
1SMB5919BT3G 1SMB59xxBT3G.PDF
1SMB5919BT3G
Виробник: ONSEMI
Category: SMD Zener diodes
Description: Diode: Zener; 3W; 5.6V; SMD; reel,tape; SMB; single diode
Type of diode: Zener
Power dissipation: 3W
Zener voltage: 5.6V
Mounting: SMD
Tolerance: ±5%
Kind of package: reel; tape
Case: SMB
Semiconductor structure: single diode
Manufacturer series: 1SMB59xxBT3G
на замовлення 6143 шт:
термін постачання 21-30 дні (днів)
Кількість Ціна
20+22.43 грн
26+16.50 грн
30+14.17 грн
50+9.67 грн
100+8.25 грн
500+6.50 грн
Мінімальне замовлення: 20
В кошику  од. на суму  грн.
SZ1SMB5919BT3G 1SMB59xxBT3G.PDF
Виробник: ONSEMI
Category: SMD Zener diodes
Description: Diode: Zener; 3W; 5.6V; SMD; reel,tape; SMB; single diode
Type of diode: Zener
Power dissipation: 3W
Zener voltage: 5.6V
Mounting: SMD
Tolerance: ±5%
Kind of package: reel; tape
Case: SMB
Semiconductor structure: single diode
Manufacturer series: 1SMB59xxBT3G
Application: automotive industry
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FDWS86368-F085 fdws86368_f085-d.pdf
Виробник: ONSEMI
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 80V; 80A; 214W; DFNW8
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 80V
Drain current: 80A
Power dissipation: 214W
Case: DFNW8
Gate-source voltage: ±20V
On-state resistance: 4.5mΩ
Mounting: SMD
Gate charge: 57nC
Kind of package: reel; tape
Kind of channel: enhancement
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FQP6N80C FQP6N80C.pdf
FQP6N80C
Виробник: ONSEMI
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 800V; 3.2A; 158W; TO220AB
Type of transistor: N-MOSFET
Technology: QFET®
Polarisation: unipolar
Drain-source voltage: 800V
Drain current: 3.2A
Power dissipation: 158W
Case: TO220AB
Gate-source voltage: ±30V
On-state resistance: 2.5Ω
Mounting: THT
Gate charge: 30nC
Kind of package: tube
Kind of channel: enhancement
на замовлення 146 шт:
термін постачання 21-30 дні (днів)
Кількість Ціна
3+154.35 грн
10+119.16 грн
50+100.83 грн
Мінімальне замовлення: 3
В кошику  од. на суму  грн.
FQPF6N80T fqpf6n80t-d.pdf
FQPF6N80T
Виробник: ONSEMI
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 800V; 2.1A; Idm: 13.2A; 51W; TO220FP
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 800V
Drain current: 2.1A
Pulsed drain current: 13.2A
Power dissipation: 51W
Case: TO220FP
Gate-source voltage: ±30V
On-state resistance: 1.95Ω
Mounting: THT
Gate charge: 31nC
Kind of package: tube
Kind of channel: enhancement
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FCP099N60E fcp099n60e-d.pdf
Виробник: ONSEMI
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 600V; 37A; Idm: 111A; 357W; TO220-3
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 600V
Drain current: 37A
Power dissipation: 357W
Case: TO220-3
Gate-source voltage: ±20V
On-state resistance: 99mΩ
Mounting: THT
Kind of package: tube
Kind of channel: enhancement
Pulsed drain current: 111A
Gate charge: 88nC
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NTHL099N60S5 nthl099n60s5-d.pdf
Виробник: ONSEMI
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 600V; 33A; Idm: 95A; 184W; TO247-3
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 600V
Drain current: 33A
Power dissipation: 184W
Case: TO247-3
Gate-source voltage: ±30V
On-state resistance: 99mΩ
Mounting: THT
Kind of package: tube
Kind of channel: enhancement
Pulsed drain current: 95A
Gate charge: 48nC
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FCMT199N60 fcmt199n60-d.pdf
Виробник: ONSEMI
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 600V; 20.2A; Idm: 60.6A; 208W
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 600V
Drain current: 20.2A
Power dissipation: 208W
Case: Power88
Gate-source voltage: ±20V
On-state resistance: 0.199Ω
Mounting: SMD
Kind of channel: enhancement
Pulsed drain current: 60.6A
Gate charge: 57nC
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FCMT299N60 fcmt299n60-d.pdf
Виробник: ONSEMI
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 600V; 7.9A; Idm: 36A; 125W; Power88
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 600V
Drain current: 7.9A
Power dissipation: 125W
Case: Power88
Gate-source voltage: ±20V
On-state resistance: 0.299Ω
Mounting: SMD
Kind of package: reel; tape
Kind of channel: enhancement
Pulsed drain current: 36A
Gate charge: 51nC
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FDBL0210N80 fdbl0210n80-d.pdf
Виробник: ONSEMI
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 80V; 240A; 357W; H-PSOF8L
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 80V
Drain current: 240A
Power dissipation: 357W
Case: H-PSOF8L
Gate-source voltage: ±20V
On-state resistance: 2mΩ
Mounting: SMD
Kind of channel: enhancement
Gate charge: 130nC
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FAN7388MX fan7388-d.pdf
Виробник: ONSEMI
Category: Buffers, transceivers, drivers
Description: Transistor: N-MOSFET; unipolar; SO20; 10÷20V
Kind of package: reel; tape
Kind of channel: enhancement
Case: SO20
Mounting: SMD
Type of transistor: N-MOSFET
Polarisation: unipolar
Operating temperature: -40...150°C
Output current: 350...650mA
Supply voltage: 10...20V
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MJ15023G description MJ15023G.PDF
MJ15023G
Виробник: ONSEMI
Category: PNP THT transistors
Description: Transistor: PNP; bipolar; 200V; 16A; 250W; TO3
Kind of package: in-tray
Mounting: THT
Type of transistor: PNP
Case: TO3
Collector current: 16A
Collector-emitter voltage: 200V
Power dissipation: 250W
Frequency: 4MHz
Polarisation: bipolar
на замовлення 42 шт:
термін постачання 21-30 дні (днів)
Кількість Ціна
1+456.77 грн
5+394.14 грн
10+379.14 грн
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BZX84C12 BZX84Cxx.pdf
Виробник: ONSEMI
Category: SMD Zener diodes
Description: Diode: Zener; 0.3W; 12V; SMD; reel,tape; SOT23; single diode; BZX84C
Type of diode: Zener
Power dissipation: 0.3W
Zener voltage: 12V
Mounting: SMD
Tolerance: ±5%
Kind of package: reel; tape
Case: SOT23
Semiconductor structure: single diode
Manufacturer series: BZX84C
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SZBZX84C12LT1G BZX84B_BZX84C.PDF
Виробник: ONSEMI
Category: SMD Zener diodes
Description: Diode: Zener; 0.3W; 12V; SMD; reel,tape; SOT23; single diode; BZX84C
Type of diode: Zener
Power dissipation: 0.3W
Zener voltage: 12V
Mounting: SMD
Tolerance: ±5%
Kind of package: reel; tape
Case: SOT23
Semiconductor structure: single diode
Manufacturer series: BZX84C
Application: automotive industry
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SZBZX84C12ET1G BZX84CxxET1G.PDF
Виробник: ONSEMI
Category: SMD Zener diodes
Description: Diode: Zener; 0.3W; 12V; SMD; reel,tape; SOT23; single diode
Type of diode: Zener
Power dissipation: 0.3W
Zener voltage: 12V
Mounting: SMD
Tolerance: ±5%
Kind of package: reel; tape
Case: SOT23
Semiconductor structure: single diode
Manufacturer series: BZX84CxxET1G
Application: automotive industry
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MC10H125PG MC10H125FNG.pdf
MC10H125PG
Виробник: ONSEMI
Category: Level translators
Description: IC: digital; non-inverting,logic level voltage translator; Ch: 4
Mounting: THT
Operating temperature: 0...75°C
Number of outputs: 4
Number of channels: 4
Number of inputs: 8
Kind of package: tube
Manufacturer series: 10H
Case: DIP16
Type of integrated circuit: digital
Kind of integrated circuit: logic level voltage translator; non-inverting
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MC10H124FNG MC10H124FNG.pdf
MC10H124FNG
Виробник: ONSEMI
Category: Level translators
Description: IC: digital; logic level voltage translator; Ch: 4; SMD; PLCC20
Mounting: SMD
Operating temperature: 0...75°C
Number of outputs: 8
Number of channels: 4
Number of inputs: 5
Kind of package: tube
Manufacturer series: 10H
Case: PLCC20
Type of integrated circuit: digital
Kind of integrated circuit: logic level voltage translator
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MC10H124FNR2G MC10H124FNG.pdf
MC10H124FNR2G
Виробник: ONSEMI
Category: Level translators
Description: IC: digital; logic level voltage translator; Ch: 4; SMD; PLCC20
Mounting: SMD
Operating temperature: 0...75°C
Number of outputs: 8
Number of channels: 4
Number of inputs: 5
Kind of package: reel; tape
Manufacturer series: 10H
Case: PLCC20
Type of integrated circuit: digital
Kind of integrated circuit: logic level voltage translator
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MC10H125FNG MC10H125FNG.pdf
MC10H125FNG
Виробник: ONSEMI
Category: Level translators
Description: IC: digital; non-inverting,logic level voltage translator; Ch: 4
Mounting: SMD
Operating temperature: 0...75°C
Number of outputs: 4
Number of channels: 4
Number of inputs: 8
Kind of package: tube
Manufacturer series: 10H
Case: PLCC20
Type of integrated circuit: digital
Kind of integrated circuit: logic level voltage translator; non-inverting
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MC10H125FNR2G MC10H125FNG.pdf
MC10H125FNR2G
Виробник: ONSEMI
Category: Level translators
Description: IC: digital; non-inverting,logic level voltage translator; Ch: 4
Mounting: SMD
Operating temperature: 0...75°C
Number of outputs: 4
Number of channels: 4
Number of inputs: 8
Kind of package: reel; tape
Manufacturer series: 10H
Case: PLCC20
Type of integrated circuit: digital
Kind of integrated circuit: logic level voltage translator; non-inverting
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NSVR201MXT5G nsvr201mx-d.pdf
Виробник: ONSEMI
Category: SMD Schottky diodes
Description: Diode: Schottky switching; X2DFN2; SMD; 2V; 50mA; reel,tape
Type of diode: Schottky switching
Case: X2DFN2
Mounting: SMD
Max. off-state voltage: 2V
Load current: 50mA
Semiconductor structure: single diode
Max. forward voltage: 0.32V
Kind of package: reel; tape
Application: automotive industry
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CAV24C32WE-GT3 CAV24C32-D.pdf
Виробник: ONSEMI
Category: Serial EEPROM memories - integ. circ.
Description: IC: EEPROM memory; 32kbEEPROM; I2C; 4kx8bit; 2.5÷5.5V; 400kHz
Type of integrated circuit: EEPROM memory
Kind of memory: EEPROM
Memory: 32kb EEPROM
Interface: I2C
Memory organisation: 4kx8bit
Operating voltage: 2.5...5.5V
Clock frequency: 400kHz
Mounting: SMD
Case: SOIC8
Kind of interface: serial
Operating temperature: -40...125°C
Access time: 900ns
Kind of package: reel; tape
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NVMYS011N04CTWG nvmys011n04c-d.pdf
Виробник: ONSEMI
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 40V; 35A; Idm: 173A; 9.1W; LFPAK56
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 40V
Drain current: 35A
Pulsed drain current: 173A
Power dissipation: 9.1W
Case: LFPAK56
Gate-source voltage: ±20V
On-state resistance: 12mΩ
Mounting: SMD
Gate charge: 7.9nC
Kind of package: reel; tape
Kind of channel: enhancement
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FGY100T65SCDT fgy100t65scdt-d.pdf
Виробник: ONSEMI
Category: THT IGBT transistors
Description: Transistor: IGBT; 650V; 100A; 375W; TO247-3
Mounting: THT
Type of transistor: IGBT
Case: TO247-3
Gate charge: 157nC
Power dissipation: 375W
Gate-emitter voltage: ±25V
Collector current: 100A
Pulsed collector current: 300A
Collector-emitter voltage: 650V
Kind of package: tube
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FDMS8025S FAIR-S-A0002363775-1.pdf?t.download=true&u=5oefqw fdms8025s-d.pdf
Виробник: ONSEMI
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 30V; 49A; Idm: 100A; 50W; Power56
Mounting: SMD
Kind of channel: enhancement
Type of transistor: N-MOSFET
Case: Power56
Polarisation: unipolar
Gate-source voltage: ±20V
Gate charge: 47nC
On-state resistance: 4mΩ
Power dissipation: 50W
Drain current: 49A
Drain-source voltage: 30V
Pulsed drain current: 100A
Kind of package: reel; tape
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FCH070N60E fch070n60e-d.pdf
Виробник: ONSEMI
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 600V; 33A; Idm: 156A; 481W; TO247
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 600V
Drain current: 33A
Power dissipation: 481W
Case: TO247
Gate-source voltage: ±20V
On-state resistance: 58mΩ
Mounting: THT
Gate charge: 128nC
Kind of package: tube
Kind of channel: enhancement
Pulsed drain current: 156A
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FCH170N60 fch170n60-d.pdf ONSM-S-A0003584973-1.pdf?t.download=true&u=5oefqw
Виробник: ONSEMI
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 600V; 14A; Idm: 66A; 227W; TO247
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 600V
Drain current: 14A
Power dissipation: 227W
Case: TO247
Gate-source voltage: ±20V
On-state resistance: 0.15Ω
Mounting: THT
Gate charge: 42nC
Kind of package: tube
Kind of channel: enhancement
Pulsed drain current: 66A
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FCP170N60 FAIR-S-A0002365465-1.pdf?t.download=true&u=5oefqw fcp170n60-d.pdf
Виробник: ONSEMI
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 600V; 22A; Idm: 66A; 227W; TO220-3
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 600V
Drain current: 22A
Power dissipation: 227W
Case: TO220-3
Gate-source voltage: ±20V
On-state resistance: 0.17Ω
Mounting: THT
Gate charge: 42nC
Kind of package: tube
Kind of channel: enhancement
Pulsed drain current: 66A
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FDB0170N607L fdb0170n607l-d.pdf
Виробник: ONSEMI
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 60V; 300A; Idm: 1620A; 250W; D2PAK-7
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 60V
Drain current: 300A
Power dissipation: 250W
Case: D2PAK-7
Gate-source voltage: ±20V
On-state resistance: 1.4mΩ
Mounting: SMD
Gate charge: 173nC
Kind of package: reel; tape
Kind of channel: enhancement
Pulsed drain current: 1620A
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NUF6401MNT1G nuf6401-d.pdf
Виробник: ONSEMI
Category: Protection diodes - arrays
Description: Diode: TVS array; bidirectional; DFN12; Ch: 6; reel,tape
Mounting: SMD
Kind of package: reel; tape
Type of diode: TVS array
Number of channels: 6
Case: DFN12
Semiconductor structure: bidirectional
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NUF6400MNTBG nuf6400mn-d.pdf
Виробник: ONSEMI
Category: Protection diodes - arrays
Description: Diode: TVS array; bidirectional; DFN12; Ch: 6; reel,tape
Mounting: SMD
Kind of package: reel; tape
Type of diode: TVS array
Number of channels: 6
Case: DFN12
Semiconductor structure: bidirectional
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BAS20LT1G ZMP_60970.pdf
BAS20LT1G
Виробник: ONSEMI
Category: SMD universal diodes
Description: Diode: switching; SMD; 200V; 0.2A; 50ns; SOT23; Ufmax: 1.25V
Type of diode: switching
Mounting: SMD
Max. off-state voltage: 200V
Load current: 0.2A
Reverse recovery time: 50ns
Semiconductor structure: single diode
Capacitance: 5pF
Case: SOT23
Max. forward voltage: 1.25V
Kind of package: reel; tape
на замовлення 1033 шт:
термін постачання 21-30 дні (днів)
Кількість Ціна
72+6.28 грн
117+3.58 грн
162+2.58 грн
200+2.27 грн
500+1.87 грн
1000+1.55 грн
Мінімальне замовлення: 72
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