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MC34064D-5G ONSEMI mc34064-d.pdf Category: Supervisor circuits
Description: IC: supervisor circuit; open drain; Active logical level: low
Operating temperature: 0...70°C
Active logical level: low
Kind of RESET output: open drain
Kind of integrated circuit: power on reset monitor (PoR); voltage detector
Mounting: SMD
Case: SO8
Type of integrated circuit: supervisor circuit
Supply voltage: 6.5V
Number of channels: 1
Threshold on-voltage: 4.61V
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MC34064D-5R2G ONSEMI mc34064-d.pdf description Category: Supervisor circuits
Description: IC: supervisor circuit; open drain; Active logical level: low
Operating temperature: 0...70°C
Active logical level: low
Kind of RESET output: open drain
Kind of integrated circuit: power on reset monitor (PoR); voltage detector
Mounting: SMD
Case: SOIC8
Type of integrated circuit: supervisor circuit
Supply voltage: 6.5V
Number of channels: 1
Threshold on-voltage: 4.61V
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MC34064P-5RAG ONSEMI mc34064-d.pdf Category: Supervisor circuits
Description: IC: supervisor circuit; open collector; TO92; Ch: 1; -1÷10V
Operating temperature: 0...70°C
Active logical level: low
Kind of RESET output: open collector
Kind of integrated circuit: power on reset monitor (PoR); voltage detector
Mounting: THT
Case: TO92
Type of integrated circuit: supervisor circuit
Supply voltage: -1...10V
Number of channels: 1
Threshold on-voltage: 4.61V
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BZX85C18 BZX85C18 ONSEMI BZX85C10.pdf Category: THT Zener diodes
Description: Diode: Zener; 1W; 18V; bulk; DO41; single diode; BZX85C
Type of diode: Zener
Power dissipation: 1W
Zener voltage: 18V
Kind of package: bulk
Case: DO41
Mounting: THT
Tolerance: ±5%
Semiconductor structure: single diode
Manufacturer series: BZX85C
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MJD128T4G ONSEMI mjd128-d.pdf Category: PNP SMD Darlington transistors
Description: Transistor: PNP; bipolar; Darlington; 120V; 8A; 1.75W; DPAK
Type of transistor: PNP
Polarisation: bipolar
Kind of transistor: Darlington
Collector-emitter voltage: 120V
Collector current: 8A
Power dissipation: 1.75W
Case: DPAK
Mounting: SMD
Kind of package: reel; tape
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NJVMJD128T4G ONSEMI mjd128-d.pdf Category: PNP SMD Darlington transistors
Description: Transistor: PNP; bipolar; Darlington; 120V; 8A; 1.75W; DPAK
Type of transistor: PNP
Polarisation: bipolar
Kind of transistor: Darlington
Collector-emitter voltage: 120V
Collector current: 8A
Power dissipation: 1.75W
Case: DPAK
Mounting: SMD
Kind of package: reel; tape
Application: automotive industry
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MJD122T4G MJD122T4G ONSEMI MJD122_MJD127.PDF Category: NPN SMD Darlington transistors
Description: Transistor: NPN; bipolar; Darlington; 100V; 8A; 1.75W; DPAK
Type of transistor: NPN
Polarisation: bipolar
Kind of transistor: Darlington
Collector-emitter voltage: 100V
Collector current: 8A
Power dissipation: 1.75W
Case: DPAK
Mounting: SMD
Kind of package: reel; tape
Current gain: 300
Frequency: 4MHz
на замовлення 802 шт:
термін постачання 14-30 дні (днів)
6+89.48 грн
10+57.32 грн
25+47.17 грн
50+40.79 грн
100+35.58 грн
200+31.39 грн
500+28.95 грн
Мінімальне замовлення: 6
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MJD127G MJD127G ONSEMI MJD122_MJD127.PDF Category: PNP SMD Darlington transistors
Description: Transistor: PNP; bipolar; Darlington; 100V; 8A; 20W; DPAK
Type of transistor: PNP
Polarisation: bipolar
Kind of transistor: Darlington
Collector-emitter voltage: 100V
Collector current: 8A
Power dissipation: 20W
Case: DPAK
Mounting: SMD
Kind of package: tube
Current gain: 100...12000
Frequency: 4MHz
на замовлення 162 шт:
термін постачання 14-30 дні (днів)
5+90.38 грн
10+71.34 грн
25+55.39 грн
75+46.16 грн
Мінімальне замовлення: 5
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MJD127T4G MJD127T4G ONSEMI mjd122.pdf Category: PNP SMD Darlington transistors
Description: Transistor: PNP; bipolar; Darlington; 100V; 8A; 20W; DPAK
Type of transistor: PNP
Polarisation: bipolar
Kind of transistor: Darlington
Collector-emitter voltage: 100V
Collector current: 8A
Power dissipation: 20W
Case: DPAK
Mounting: SMD
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MJD122G MJD122G ONSEMI MJD122_MJD127.PDF Category: NPN SMD Darlington transistors
Description: Transistor: NPN; bipolar; Darlington; 100V; 8A; 1.75W; DPAK
Type of transistor: NPN
Polarisation: bipolar
Kind of transistor: Darlington
Collector-emitter voltage: 100V
Collector current: 8A
Power dissipation: 1.75W
Case: DPAK
Mounting: SMD
Kind of package: tube
Current gain: 300
Frequency: 4MHz
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NJVMJD122T4G ONSEMI mjd122-d.pdf Category: NPN SMD Darlington transistors
Description: Transistor: NPN; bipolar; Darlington; 100V; 8A; 1.75W; DPAK
Type of transistor: NPN
Polarisation: bipolar
Kind of transistor: Darlington
Collector-emitter voltage: 100V
Collector current: 8A
Power dissipation: 1.75W
Case: DPAK
Mounting: SMD
Kind of package: reel; tape
Application: automotive industry
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NJVMJD127T4G ONSEMI mjd122-d.pdf Category: PNP SMD Darlington transistors
Description: Transistor: PNP; bipolar; Darlington; 100V; 8A; 1.75W; DPAK
Type of transistor: PNP
Polarisation: bipolar
Kind of transistor: Darlington
Collector-emitter voltage: 100V
Collector current: 8A
Power dissipation: 1.75W
Case: DPAK
Mounting: SMD
Kind of package: reel; tape
Application: automotive industry
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FFSD08120A ONSEMI ffsd08120a-d.pdf Category: SMD Schottky diodes
Description: Diode: Schottky rectifying; DPAK; SiC; SMD; 1.2kV; 22.5A; reel,tape
Type of diode: Schottky rectifying
Case: DPAK
Technology: SiC
Mounting: SMD
Max. off-state voltage: 1.2kV
Load current: 22.5A
Semiconductor structure: single diode
Max. forward voltage: 1.75V
Kind of package: reel; tape
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FDP047AN08A0 FDP047AN08A0 ONSEMI fdh047an08a0-d.pdf Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 75V; 80A; 310W; TO220-3
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 75V
Drain current: 80A
Power dissipation: 310W
Case: TO220-3
Gate-source voltage: ±20V
On-state resistance: 11mΩ
Mounting: THT
Kind of package: tube
Kind of channel: enhancement
на замовлення 71 шт:
термін постачання 14-30 дні (днів)
2+282.90 грн
50+155.26 грн
Мінімальне замовлення: 2
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NCP4305DDR2G NCP4305DDR2G ONSEMI ncp4305-d.pdf Category: Voltage regulators - DC/DC circuits
Description: IC: PMIC; SO8; flyback,forward,resonant LLC; 7.8÷37VDC
Type of integrated circuit: PMIC
Frequency: 1MHz
Mounting: SMD
Case: SO8
Topology: flyback; forward; resonant LLC
Operating temperature: -40...125°C
Output current: 4...8A
Number of channels: 1
Operating voltage: 7.8...37V DC
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NCP4305DMNTWG ONSEMI ncp4305-d.pdf Category: Voltage regulators - DC/DC circuits
Description: IC: PMIC; DFN8; flyback,forward,resonant LLC; 7.8÷37VDC
Type of integrated circuit: PMIC
Frequency: 1MHz
Mounting: SMD
Case: DFN8
Topology: flyback; forward; resonant LLC
Operating temperature: -40...125°C
Output current: 4...8A
Number of channels: 1
Operating voltage: 7.8...37V DC
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NCP4305DMTTWG ONSEMI ncp4305-d.pdf Category: Voltage regulators - DC/DC circuits
Description: IC: PMIC; WDFN8; flyback,forward,resonant LLC; 7.8÷37VDC
Type of integrated circuit: PMIC
Frequency: 1MHz
Mounting: SMD
Case: WDFN8
Topology: flyback; forward; resonant LLC
Operating temperature: -40...125°C
Output current: 4...8A
Number of channels: 1
Operating voltage: 7.8...37V DC
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CAT25256VI-GT3 ONSEMI CAT25256-D.pdf Category: Serial EEPROM memories - integ. circ.
Description: IC: EEPROM memory; 256kbEEPROM; SPI; 32kx8bit; 1.8÷5.5V; 20MHz
Type of integrated circuit: EEPROM memory
Kind of memory: EEPROM
Memory: 256kb EEPROM
Interface: SPI
Memory organisation: 32kx8bit
Operating voltage: 1.8...5.5V
Clock frequency: 20MHz
Mounting: SMD
Case: SOIC8
Kind of interface: serial
Operating temperature: -40...85°C
Access time: 40ns
Kind of package: reel; tape
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CAT25256YI-GT3 ONSEMI CAT25256-D.pdf Category: Serial EEPROM memories - integ. circ.
Description: IC: EEPROM memory; 256kbEEPROM; SPI; 32kx8bit; 1.8÷5.5V; 20MHz
Type of integrated circuit: EEPROM memory
Kind of memory: EEPROM
Memory: 256kb EEPROM
Interface: SPI
Memory organisation: 32kx8bit
Operating voltage: 1.8...5.5V
Clock frequency: 20MHz
Mounting: SMD
Case: TSSOP8
Kind of interface: serial
Operating temperature: -40...85°C
Access time: 40ns
Kind of package: reel; tape
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CAT25256XI-T2 ONSEMI CAT25256-D.pdf Category: Serial EEPROM memories - integ. circ.
Description: IC: EEPROM memory; 256kbEEPROM; SPI; 32kx8bit; 1.8÷5.5V; 20MHz
Type of integrated circuit: EEPROM memory
Kind of memory: EEPROM
Memory: 256kb EEPROM
Interface: SPI
Memory organisation: 32kx8bit
Operating voltage: 1.8...5.5V
Clock frequency: 20MHz
Mounting: SMD
Case: SOIC8
Kind of interface: serial
Operating temperature: -40...85°C
Access time: 40ns
Kind of package: reel; tape
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NCS29001DR2G NCS29001DR2G ONSEMI NCS29001.PDF Category: LED drivers
Description: IC: driver; LED driver; SO14; Ch: 1; 8.5÷18V
Operating temperature: -40...85°C
Mounting: SMD
Input voltage: 8.5...18V
Kind of integrated circuit: LED driver
Type of integrated circuit: driver
Case: SO14
Integrated circuit features: PWM; soft-start function; UVLO (UnderVoltage LockOut)
Number of channels: 1
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NSVDTC143ZET1G ONSEMI dtc143z-d.pdf Category: NPN SMD transistors
Description: Transistor: NPN; bipolar; BRT; 50V; 100mA; 300mW; SC75,SOT416
Type of transistor: NPN
Polarisation: bipolar
Kind of transistor: BRT
Collector-emitter voltage: 50V
Collector current: 0.1A
Power dissipation: 0.3W
Case: SC75; SOT416
Current gain: 80...200
Mounting: SMD
Quantity in set/package: 3000pcs.
Kind of package: reel; tape
Base resistor: 4.7kΩ
Application: automotive industry
Base-emitter resistor: 47kΩ
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BZX84C33LT1G BZX84C33LT1G ONSEMI BZX84B_BZX84C.PDF Category: SMD Zener diodes
Description: Diode: Zener; 0.3W; 33V; SMD; reel,tape; SOT23; single diode; BZX84C
Type of diode: Zener
Power dissipation: 0.3W
Zener voltage: 33V
Mounting: SMD
Tolerance: ±5%
Kind of package: reel; tape
Case: SOT23
Semiconductor structure: single diode
Manufacturer series: BZX84C
на замовлення 15000 шт:
термін постачання 14-30 дні (днів)
63+7.23 грн
100+4.20 грн
150+2.80 грн
181+2.32 грн
500+1.59 грн
1000+1.38 грн
1500+1.27 грн
3000+1.16 грн
Мінімальне замовлення: 63
В кошику  од. на суму  грн.
MC74HC175ADG MC74HC175ADG ONSEMI MC74HC175A-D.pdf Category: Flip-Flops
Description: IC: digital; D flip-flop; Ch: 4; CMOS; HC; SMD; SO16; tube
Type of integrated circuit: digital
Kind of integrated circuit: D flip-flop
Number of channels: 4
Technology: CMOS
Mounting: SMD
Case: SO16
Operating temperature: -55...125°C
Supply voltage: 2...6V DC
Kind of package: tube
Manufacturer series: HC
Trigger: positive-edge-triggered
на замовлення 21 шт:
термін постачання 14-30 дні (днів)
10+47.90 грн
18+24.59 грн
Мінімальне замовлення: 10
В кошику  од. на суму  грн.
MC74HC175ADR2G MC74HC175ADR2G ONSEMI MC74HC175A-D.pdf Category: Flip-Flops
Description: IC: digital; D flip-flop; Ch: 4; CMOS; HC; SMD; SO16; reel,tape
Type of integrated circuit: digital
Kind of integrated circuit: D flip-flop
Number of channels: 4
Technology: CMOS
Mounting: SMD
Case: SO16
Operating temperature: -55...125°C
Supply voltage: 2...6V DC
Kind of package: reel; tape
Manufacturer series: HC
Trigger: positive-edge-triggered
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MC74HC175ADTR2G ONSEMI MC74HC175A-D.pdf Category: Flip-Flops
Description: IC: digital; D flip-flop; Ch: 4; CMOS; HC; SMD; TSSOP16; HC; reel,tape
Type of integrated circuit: digital
Kind of integrated circuit: D flip-flop
Number of channels: 4
Technology: CMOS
Mounting: SMD
Case: TSSOP16
Operating temperature: -55...125°C
Family: HC
Supply voltage: 2...6V DC
Kind of package: reel; tape
Manufacturer series: HC
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MM74HC175M MM74HC175M ONSEMI MM74HC175-D.pdf Category: Flip-Flops
Description: IC: digital; D flip-flop; Ch: 4; CMOS; HC; SMD; SO16; tube
Type of integrated circuit: digital
Kind of integrated circuit: D flip-flop
Number of channels: 4
Technology: CMOS
Mounting: SMD
Case: SO16
Operating temperature: -40...85°C
Supply voltage: 2...6V DC
Kind of package: tube
Manufacturer series: HC
Trigger: positive-edge-triggered
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MM74HC175MTCX ONSEMI MM74HC175-D.pdf Category: Flip-Flops
Description: IC: digital; D flip-flop; Ch: 4; CMOS; HC; SMD; TSSOP16; HC; reel,tape
Type of integrated circuit: digital
Kind of integrated circuit: D flip-flop
Number of channels: 4
Technology: CMOS
Mounting: SMD
Case: TSSOP16
Operating temperature: -55...125°C
Family: HC
Supply voltage: 2...6V DC
Kind of package: reel; tape
Manufacturer series: HC
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MM74HC175MX MM74HC175MX ONSEMI MM74HC175-D.pdf Category: Flip-Flops
Description: IC: digital; D flip-flop; Ch: 4; CMOS; HC; SMD; SO16; reel,tape
Type of integrated circuit: digital
Kind of integrated circuit: D flip-flop
Number of channels: 4
Technology: CMOS
Mounting: SMD
Case: SO16
Operating temperature: -40...85°C
Supply voltage: 2...6V DC
Kind of package: reel; tape
Manufacturer series: HC
Trigger: positive-edge-triggered
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FSV20120V ONSEMI fsv20120v-d.pdf Category: SMD Schottky diodes
Description: Diode: Schottky rectifying; TO277; SMD; 120V; 20A; reel,tape
Type of diode: Schottky rectifying
Case: TO277
Mounting: SMD
Max. off-state voltage: 120V
Load current: 20A
Semiconductor structure: single diode
Max. forward voltage: 0.79V
Max. forward impulse current: 270A
Kind of package: reel; tape
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MC10EP16DG ONSEMI mc10ep16-d.pdf Category: Other logic integrated circuits
Description: IC: digital; receiver,differential; Ch: 1; ECL; SMD; SOIC8; 3÷5.5V
Type of integrated circuit: digital
Kind of integrated circuit: differential; receiver
Number of channels: 1
Technology: ECL
Mounting: SMD
Case: SOIC8
Operating temperature: -40...85°C
Supply voltage: 3...5.5V
Integrated circuit features: differential
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NDP6060L NDP6060L ONSEMI NDB6060L.pdf Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 60V; 48A; 100W; TO220AB
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 60V
Drain current: 48A
Power dissipation: 100W
Case: TO220AB
Gate-source voltage: ±16V
On-state resistance: 40mΩ
Mounting: THT
Kind of package: tube
Kind of channel: enhancement
Features of semiconductor devices: logic level
Gate charge: 60nC
на замовлення 42 шт:
термін постачання 14-30 дні (днів)
3+216.92 грн
10+152.75 грн
30+145.19 грн
Мінімальне замовлення: 3
В кошику  од. на суму  грн.
NDS352AP NDS352AP ONSEMI NDS352AP.pdf Category: SMD P channel transistors
Description: Transistor: P-MOSFET; unipolar; -30V; -0.9A; 0.5W; SuperSOT-3
Type of transistor: P-MOSFET
Polarisation: unipolar
Drain-source voltage: -30V
Drain current: -900mA
Power dissipation: 0.5W
Case: SuperSOT-3
Gate-source voltage: ±20V
On-state resistance: 0.7Ω
Mounting: SMD
Kind of package: reel; tape
Kind of channel: enhancement
Features of semiconductor devices: logic level
Gate charge: 3nC
на замовлення 14 шт:
термін постачання 14-30 дні (днів)
8+63.27 грн
11+40.79 грн
13+32.31 грн
Мінімальне замовлення: 8
В кошику  од. на суму  грн.
FDV304P FDV304P ONSEMI FDV304P.pdf Category: SMD P channel transistors
Description: Transistor: P-MOSFET; unipolar; -25V; -0.46A; 0.35W; SOT23
Type of transistor: P-MOSFET
Polarisation: unipolar
Drain-source voltage: -25V
Drain current: -0.46A
Power dissipation: 0.35W
Case: SOT23
Gate-source voltage: ±8V
On-state resistance: 2Ω
Mounting: SMD
Kind of package: reel; tape
Kind of channel: enhancement
Features of semiconductor devices: logic level
Gate charge: 1.5nC
на замовлення 7274 шт:
термін постачання 14-30 дні (днів)
63+7.23 грн
74+5.71 грн
99+4.28 грн
112+3.77 грн
500+2.90 грн
1000+2.70 грн
3000+2.51 грн
6000+2.43 грн
Мінімальне замовлення: 63
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FDV301N FDV301N ONSEMI FDV301N.pdf Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 25V; 0.22A; 0.35W; SOT23
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 25V
Drain current: 0.22A
Power dissipation: 0.35W
Case: SOT23
Gate-source voltage: ±8V
On-state resistance: 9Ω
Mounting: SMD
Kind of package: reel; tape
Kind of channel: enhancement
Features of semiconductor devices: logic level
Gate charge: 0.7nC
на замовлення 43470 шт:
термін постачання 14-30 дні (днів)
46+9.94 грн
63+6.71 грн
71+5.96 грн
100+4.20 грн
120+3.52 грн
500+2.32 грн
1000+2.15 грн
3000+1.94 грн
6000+1.84 грн
Мінімальне замовлення: 46
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FDV303N FDV303N ONSEMI FDV303N.pdf Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 25V; 0.68A; 0.35W; SOT23
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 25V
Drain current: 0.68A
Power dissipation: 0.35W
Case: SOT23
Gate-source voltage: ±8V
On-state resistance: 0.8Ω
Mounting: SMD
Kind of package: reel; tape
Kind of channel: enhancement
Features of semiconductor devices: logic level
Gate charge: 2.3nC
на замовлення 362 шт:
термін постачання 14-30 дні (днів)
20+23.50 грн
48+8.81 грн
60+7.05 грн
100+6.39 грн
Мінімальне замовлення: 20
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FDN360P FDN360P ONSEMI FDN360P.pdf Category: SMD P channel transistors
Description: Transistor: P-MOSFET; unipolar; -30V; -2A; 0.5W; SuperSOT-3
Type of transistor: P-MOSFET
Polarisation: unipolar
Drain-source voltage: -30V
Drain current: -2A
Power dissipation: 0.5W
Case: SuperSOT-3
Gate-source voltage: ±20V
On-state resistance: 136mΩ
Mounting: SMD
Kind of package: reel; tape
Kind of channel: enhancement
Features of semiconductor devices: logic level
Technology: PowerTrench®
Gate charge: 9nC
на замовлення 6826 шт:
термін постачання 14-30 дні (днів)
11+41.58 грн
15+29.54 грн
17+25.51 грн
50+17.96 грн
100+15.53 грн
500+11.41 грн
1000+10.16 грн
3000+8.56 грн
6000+8.06 грн
Мінімальне замовлення: 11
В кошику  од. на суму  грн.
FDC658AP FDC658AP ONSEMI FDC658AP.pdf Category: SMD P channel transistors
Description: Transistor: P-MOSFET; unipolar; -30V; -4A; 1.6W; SuperSOT-6
Type of transistor: P-MOSFET
Polarisation: unipolar
Drain-source voltage: -30V
Drain current: -4A
Power dissipation: 1.6W
Case: SuperSOT-6
Gate-source voltage: ±25V
On-state resistance: 75mΩ
Mounting: SMD
Kind of package: reel; tape
Kind of channel: enhancement
Features of semiconductor devices: logic level
Technology: PowerTrench®
Gate charge: 8.1nC
на замовлення 1202 шт:
термін постачання 14-30 дні (днів)
9+56.04 грн
10+43.31 грн
12+38.02 грн
50+26.52 грн
100+22.66 грн
500+16.45 грн
Мінімальне замовлення: 9
В кошику  од. на суму  грн.
FDN327N FDN327N ONSEMI FDN327N.pdf Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 20V; 2A; 0.5W; SuperSOT-3
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 20V
Drain current: 2A
Power dissipation: 0.5W
Case: SuperSOT-3
Gate-source voltage: ±8V
On-state resistance: 0.12Ω
Mounting: SMD
Kind of package: reel; tape
Kind of channel: enhancement
Features of semiconductor devices: logic level
Technology: PowerTrench®
Gate charge: 6.3nC
на замовлення 1836 шт:
термін постачання 14-30 дні (днів)
12+37.96 грн
15+28.54 грн
17+24.84 грн
50+17.04 грн
100+14.52 грн
500+10.41 грн
1000+9.32 грн
1500+8.64 грн
Мінімальне замовлення: 12
В кошику  од. на суму  грн.
ADT7461AARMZ-R ONSEMI adt7461a-d.pdf Category: Temperature transducers
Description: IC: temperature sensor; MSOP8; 3÷3.6VDC; -40÷120°C; 2.55V
Case: MSOP8
Operating temperature: -40...120°C
Supply voltage: 3...3.6V DC
Threshold on-voltage: 2.55V
Type of integrated circuit: temperature sensor
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ADT7461ARMZ-R7 ONSEMI adt7461-d.pdf Category: Temperature transducers
Description: IC: temperature sensor; MSOP8; 3÷3.6VDC; -40÷120°C; 2.55V
Case: MSOP8
Operating temperature: -40...120°C
Supply voltage: 3...3.6V DC
Threshold on-voltage: 2.55V
Type of integrated circuit: temperature sensor
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ADT7461ARZ-REEL ONSEMI adt7461-d.pdf Category: Temperature transducers
Description: IC: temperature sensor; MSOP8; 3÷3.6VDC; -40÷120°C; 2.55V
Case: MSOP8
Operating temperature: -40...120°C
Supply voltage: 3...3.6V DC
Threshold on-voltage: 2.55V
Type of integrated circuit: temperature sensor
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MC10EP89DTG ONSEMI mc10ep89-d.pdf Category: Other logic integrated circuits
Description: IC: driver; ECL; MSOP8; Ch: 1; 3÷5.5V
Case: MSOP8
Mounting: SMD
Number of channels: 1
Operating temperature: -40...85°C
Supply voltage: 3...5.5V
Type of integrated circuit: driver
Technology: ECL
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NSR1020MW2T1G ONSEMI nsr1020mw2t1-d.pdf Category: SMD Schottky diodes
Description: Diode: Schottky rectifying; SOD323; SMD; 20V; 1A; reel,tape
Type of diode: Schottky rectifying
Case: SOD323
Mounting: SMD
Max. off-state voltage: 20V
Load current: 1A
Semiconductor structure: single diode
Max. forward voltage: 0.54V
Kind of package: reel; tape
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MMBT2222A MMBT2222A ONSEMI MMBT2222A.pdf Category: NPN SMD transistors
Description: Transistor: NPN; bipolar; 40V; 1A; 1W; SOT23,TO236AB
Type of transistor: NPN
Polarisation: bipolar
Collector-emitter voltage: 40V
Collector current: 1A
Power dissipation: 1W
Case: SOT23; TO236AB
Mounting: SMD
Kind of package: reel; tape
Frequency: 300MHz
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20414-009-XTD ONSEMI Category: Unclassified
Description: 20414-009-XTD
на замовлення 1 шт:
термін постачання 14-30 дні (днів)
1+36165.60 грн
В кошику  од. на суму  грн.
MBR360RLG MBR360RLG ONSEMI MBR360RLG.PDF Category: THT Schottky diodes
Description: Diode: Schottky rectifying; THT; 60V; 3A; DO201AD; Ufmax: 1.08V
Type of diode: Schottky rectifying
Mounting: THT
Max. off-state voltage: 60V
Load current: 3A
Semiconductor structure: single diode
Case: DO201AD
Max. forward voltage: 1.08V
Max. forward impulse current: 80A
на замовлення 4039 шт:
термін постачання 14-30 дні (днів)
21+21.69 грн
23+18.30 грн
25+17.37 грн
50+15.27 грн
100+14.27 грн
500+12.42 грн
1000+11.33 грн
1500+11.16 грн
Мінімальне замовлення: 21
В кошику  од. на суму  грн.
FGY160T65SPD-F085
+1
 		FGY160T65SPD-F085 ONSEMI fgy160t65spd-f085-d.pdf Category: THT IGBT transistors
Description: Transistor: IGBT; 650V; 160A; 441W; TO247-3
Type of transistor: IGBT
Collector-emitter voltage: 650V
Collector current: 160A
Power dissipation: 441W
Case: TO247-3
Gate-emitter voltage: ±20V
Pulsed collector current: 480A
Mounting: THT
Gate charge: 163nC
Kind of package: tube
на замовлення 5 шт:
термін постачання 14-30 дні (днів)
1+1036.69 грн
5+868.64 грн
В кошику  од. на суму  грн.
AFGY160T65SPD-B4 ONSEMI afgy160t65spd-b4-d.pdf Category: THT IGBT transistors
Description: Transistor: IGBT; 650V; 160A; 441W; TO247-3
Type of transistor: IGBT
Collector-emitter voltage: 650V
Collector current: 160A
Power dissipation: 441W
Case: TO247-3
Gate-emitter voltage: ±20V
Pulsed collector current: 480A
Mounting: THT
Gate charge: 163nC
Kind of package: tube
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FCD360N65S3R0 ONSEMI fcd360n65s3r0-d.pdf Category: SMD N channel transistors
Description: Transistor: N-MOSFET; 650V; 10A; 83W; DPAK; single transistor
Type of transistor: N-MOSFET
Drain-source voltage: 650V
Drain current: 10A
Case: DPAK
Gate-source voltage: 30V
Mounting: SMD
Kind of channel: enhancement
On-state resistance: 0.36Ω
Power dissipation: 83W
Technology: PowerTrench®
Semiconductor structure: single transistor
Gate charge: 18nC
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FCPF360N65S3R0L-F154 ONSEMI fcpf360n65s3r0l-f154-d.pdf Category: THT N channel transistors
Description: Transistor: N-MOSFET; N; 650V; 10A; 27W; TO220
Type of transistor: N-MOSFET
Polarisation: N
Drain-source voltage: 650V
Drain current: 10A
Case: TO220
Gate-source voltage: 30V
Mounting: THT
Kind of channel: enhancement
On-state resistance: 0.36Ω
Power dissipation: 27W
Technology: PowerTrench®
Gate charge: 18nC
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MM74HCT574WM MM74HCT574WM ONSEMI MM74HCT573-D.pdf Category: Flip-Flops
Description: IC: digital; D flip-flop; Ch: 8; CMOS; HCT; SMD; SO20-W; OUT: 3-state
Type of integrated circuit: digital
Kind of integrated circuit: D flip-flop
Number of channels: 8
Mounting: SMD
Case: SO20-W
Operating temperature: -40...85°C
Kind of output: 3-state
Trigger: positive-edge-triggered
Technology: CMOS
Manufacturer series: HCT
Kind of package: tube
Supply voltage: 4.5...5.5V DC
на замовлення 272 шт:
термін постачання 14-30 дні (днів)
7+69.59 грн
10+45.32 грн
25+41.38 грн
38+39.45 грн
114+37.26 грн
Мінімальне замовлення: 7
В кошику  од. на суму  грн.
74VHCT574AM 74VHCT574AM ONSEMI 74VHCT574A-D.pdf Category: Flip-Flops
Description: IC: digital; D flip-flop; Ch: 8; CMOS; VHCT; SMD; SO20-W; OUT: 3-state
Type of integrated circuit: digital
Kind of integrated circuit: D flip-flop
Number of channels: 8
Mounting: SMD
Case: SO20-W
Operating temperature: -40...85°C
Kind of output: 3-state
Trigger: positive-edge-triggered
Technology: CMOS
Manufacturer series: VHCT
Kind of package: tube
Supply voltage: 4.5...5.5V DC
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74VHCT574AMTC 74VHCT574AMTC ONSEMI 74VHCT574A-D.pdf Category: Flip-Flops
Description: IC: digital; D flip-flop; Ch: 8; CMOS; VHCT; SMD; TSSOP20; tube
Type of integrated circuit: digital
Kind of integrated circuit: D flip-flop
Number of channels: 8
Mounting: SMD
Case: TSSOP20
Operating temperature: -40...85°C
Kind of output: 3-state
Trigger: positive-edge-triggered
Technology: CMOS
Manufacturer series: VHCT
Kind of package: tube
Supply voltage: 4.5...5.5V DC
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74VHCT574AMTCX 74VHCT574AMTCX ONSEMI 74VHCT574A-D.pdf Category: Flip-Flops
Description: IC: digital; D flip-flop; Ch: 8; CMOS; VHCT; SMD; TSSOP20; reel,tape
Type of integrated circuit: digital
Kind of integrated circuit: D flip-flop
Number of channels: 8
Mounting: SMD
Case: TSSOP20
Operating temperature: -40...85°C
Kind of output: 3-state
Trigger: positive-edge-triggered
Technology: CMOS
Manufacturer series: VHCT
Kind of package: reel; tape
Supply voltage: 4.5...5.5V DC
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MM74HCT574WMX MM74HCT574WMX ONSEMI MM74HCT573-D.pdf Category: Flip-Flops
Description: IC: digital; D flip-flop; Ch: 8; CMOS; HCT; SMD; SO20-W; OUT: 3-state
Type of integrated circuit: digital
Kind of integrated circuit: D flip-flop
Number of channels: 8
Mounting: SMD
Case: SO20-W
Operating temperature: -40...85°C
Kind of output: 3-state
Trigger: positive-edge-triggered
Technology: CMOS
Manufacturer series: HCT
Kind of package: reel; tape
Supply voltage: 4.5...5.5V DC
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MC74HCT574ADTR2G MC74HCT574ADTR2G ONSEMI MC74HCT574A-D.pdf Category: Flip-Flops
Description: IC: digital; D flip-flop; Ch: 8; CMOS; HCT; SMD; TSSOP20; reel,tape
Type of integrated circuit: digital
Kind of integrated circuit: D flip-flop
Number of channels: 8
Mounting: SMD
Case: TSSOP20
Operating temperature: -55...125°C
Kind of output: 3-state; non-inverting
Trigger: positive-edge-triggered
Technology: CMOS
Manufacturer series: HCT
Kind of package: reel; tape
Supply voltage: 4.5...5.5V DC
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MC74HCT574ADWR2G ONSEMI MC74HCT574A-D.pdf Category: Flip-Flops
Description: IC: digital; 3-state,octal,D flip-flop; Ch: 8; CMOS,TTL; HCT; SMD
Type of integrated circuit: digital
Kind of integrated circuit: 3-state; D flip-flop; octal
Number of channels: 8
Mounting: SMD
Operating temperature: -55...125°C
Family: HCT
Kind of output: 3-state
Technology: CMOS; TTL
Manufacturer series: HCT
Kind of package: reel; tape
Supply voltage: 4.5...5.5V DC
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MM74HCT574MTCX MM74HCT574MTCX ONSEMI MM74HCT573-D.pdf Category: Flip-Flops
Description: IC: digital; D flip-flop; Ch: 8; CMOS; HCT; SMD; TSSOP20; OUT: 3-state
Type of integrated circuit: digital
Kind of integrated circuit: D flip-flop
Number of channels: 8
Mounting: SMD
Case: TSSOP20
Operating temperature: -40...85°C
Kind of output: 3-state
Trigger: positive-edge-triggered
Technology: CMOS
Manufacturer series: HCT
Kind of package: reel; tape
Supply voltage: 4.5...5.5V DC
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MM74HCT574SJX MM74HCT574SJX ONSEMI MM74HCT573-D.pdf Category: Flip-Flops
Description: IC: digital; D flip-flop; Ch: 8; CMOS; HCT; SMD; SOP20; OUT: 3-state
Type of integrated circuit: digital
Kind of integrated circuit: D flip-flop
Number of channels: 8
Mounting: SMD
Case: SOP20
Operating temperature: -40...85°C
Kind of output: 3-state
Trigger: positive-edge-triggered
Technology: CMOS
Manufacturer series: HCT
Kind of package: reel; tape
Supply voltage: 4.5...5.5V DC
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MC34064D-5G mc34064-d.pdf
Виробник: ONSEMI
Category: Supervisor circuits
Description: IC: supervisor circuit; open drain; Active logical level: low
Operating temperature: 0...70°C
Active logical level: low
Kind of RESET output: open drain
Kind of integrated circuit: power on reset monitor (PoR); voltage detector
Mounting: SMD
Case: SO8
Type of integrated circuit: supervisor circuit
Supply voltage: 6.5V
Number of channels: 1
Threshold on-voltage: 4.61V
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MC34064D-5R2G description mc34064-d.pdf
Виробник: ONSEMI
Category: Supervisor circuits
Description: IC: supervisor circuit; open drain; Active logical level: low
Operating temperature: 0...70°C
Active logical level: low
Kind of RESET output: open drain
Kind of integrated circuit: power on reset monitor (PoR); voltage detector
Mounting: SMD
Case: SOIC8
Type of integrated circuit: supervisor circuit
Supply voltage: 6.5V
Number of channels: 1
Threshold on-voltage: 4.61V
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MC34064P-5RAG mc34064-d.pdf
Виробник: ONSEMI
Category: Supervisor circuits
Description: IC: supervisor circuit; open collector; TO92; Ch: 1; -1÷10V
Operating temperature: 0...70°C
Active logical level: low
Kind of RESET output: open collector
Kind of integrated circuit: power on reset monitor (PoR); voltage detector
Mounting: THT
Case: TO92
Type of integrated circuit: supervisor circuit
Supply voltage: -1...10V
Number of channels: 1
Threshold on-voltage: 4.61V
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BZX85C18 BZX85C10.pdf
BZX85C18
Виробник: ONSEMI
Category: THT Zener diodes
Description: Diode: Zener; 1W; 18V; bulk; DO41; single diode; BZX85C
Type of diode: Zener
Power dissipation: 1W
Zener voltage: 18V
Kind of package: bulk
Case: DO41
Mounting: THT
Tolerance: ±5%
Semiconductor structure: single diode
Manufacturer series: BZX85C
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MJD128T4G mjd128-d.pdf
Виробник: ONSEMI
Category: PNP SMD Darlington transistors
Description: Transistor: PNP; bipolar; Darlington; 120V; 8A; 1.75W; DPAK
Type of transistor: PNP
Polarisation: bipolar
Kind of transistor: Darlington
Collector-emitter voltage: 120V
Collector current: 8A
Power dissipation: 1.75W
Case: DPAK
Mounting: SMD
Kind of package: reel; tape
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NJVMJD128T4G mjd128-d.pdf
Виробник: ONSEMI
Category: PNP SMD Darlington transistors
Description: Transistor: PNP; bipolar; Darlington; 120V; 8A; 1.75W; DPAK
Type of transistor: PNP
Polarisation: bipolar
Kind of transistor: Darlington
Collector-emitter voltage: 120V
Collector current: 8A
Power dissipation: 1.75W
Case: DPAK
Mounting: SMD
Kind of package: reel; tape
Application: automotive industry
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MJD122T4G MJD122_MJD127.PDF
MJD122T4G
Виробник: ONSEMI
Category: NPN SMD Darlington transistors
Description: Transistor: NPN; bipolar; Darlington; 100V; 8A; 1.75W; DPAK
Type of transistor: NPN
Polarisation: bipolar
Kind of transistor: Darlington
Collector-emitter voltage: 100V
Collector current: 8A
Power dissipation: 1.75W
Case: DPAK
Mounting: SMD
Kind of package: reel; tape
Current gain: 300
Frequency: 4MHz
на замовлення 802 шт:
термін постачання 14-30 дні (днів)
Кількість Ціна
6+89.48 грн
10+57.32 грн
25+47.17 грн
50+40.79 грн
100+35.58 грн
200+31.39 грн
500+28.95 грн
Мінімальне замовлення: 6
В кошику  од. на суму  грн.
MJD127G MJD122_MJD127.PDF
MJD127G
Виробник: ONSEMI
Category: PNP SMD Darlington transistors
Description: Transistor: PNP; bipolar; Darlington; 100V; 8A; 20W; DPAK
Type of transistor: PNP
Polarisation: bipolar
Kind of transistor: Darlington
Collector-emitter voltage: 100V
Collector current: 8A
Power dissipation: 20W
Case: DPAK
Mounting: SMD
Kind of package: tube
Current gain: 100...12000
Frequency: 4MHz
на замовлення 162 шт:
термін постачання 14-30 дні (днів)
Кількість Ціна
5+90.38 грн
10+71.34 грн
25+55.39 грн
75+46.16 грн
Мінімальне замовлення: 5
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MJD127T4G mjd122.pdf
MJD127T4G
Виробник: ONSEMI
Category: PNP SMD Darlington transistors
Description: Transistor: PNP; bipolar; Darlington; 100V; 8A; 20W; DPAK
Type of transistor: PNP
Polarisation: bipolar
Kind of transistor: Darlington
Collector-emitter voltage: 100V
Collector current: 8A
Power dissipation: 20W
Case: DPAK
Mounting: SMD
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MJD122G MJD122_MJD127.PDF
MJD122G
Виробник: ONSEMI
Category: NPN SMD Darlington transistors
Description: Transistor: NPN; bipolar; Darlington; 100V; 8A; 1.75W; DPAK
Type of transistor: NPN
Polarisation: bipolar
Kind of transistor: Darlington
Collector-emitter voltage: 100V
Collector current: 8A
Power dissipation: 1.75W
Case: DPAK
Mounting: SMD
Kind of package: tube
Current gain: 300
Frequency: 4MHz
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NJVMJD122T4G mjd122-d.pdf
Виробник: ONSEMI
Category: NPN SMD Darlington transistors
Description: Transistor: NPN; bipolar; Darlington; 100V; 8A; 1.75W; DPAK
Type of transistor: NPN
Polarisation: bipolar
Kind of transistor: Darlington
Collector-emitter voltage: 100V
Collector current: 8A
Power dissipation: 1.75W
Case: DPAK
Mounting: SMD
Kind of package: reel; tape
Application: automotive industry
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NJVMJD127T4G mjd122-d.pdf
Виробник: ONSEMI
Category: PNP SMD Darlington transistors
Description: Transistor: PNP; bipolar; Darlington; 100V; 8A; 1.75W; DPAK
Type of transistor: PNP
Polarisation: bipolar
Kind of transistor: Darlington
Collector-emitter voltage: 100V
Collector current: 8A
Power dissipation: 1.75W
Case: DPAK
Mounting: SMD
Kind of package: reel; tape
Application: automotive industry
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FFSD08120A ffsd08120a-d.pdf
Виробник: ONSEMI
Category: SMD Schottky diodes
Description: Diode: Schottky rectifying; DPAK; SiC; SMD; 1.2kV; 22.5A; reel,tape
Type of diode: Schottky rectifying
Case: DPAK
Technology: SiC
Mounting: SMD
Max. off-state voltage: 1.2kV
Load current: 22.5A
Semiconductor structure: single diode
Max. forward voltage: 1.75V
Kind of package: reel; tape
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FDP047AN08A0 fdh047an08a0-d.pdf
FDP047AN08A0
Виробник: ONSEMI
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 75V; 80A; 310W; TO220-3
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 75V
Drain current: 80A
Power dissipation: 310W
Case: TO220-3
Gate-source voltage: ±20V
On-state resistance: 11mΩ
Mounting: THT
Kind of package: tube
Kind of channel: enhancement
на замовлення 71 шт:
термін постачання 14-30 дні (днів)
Кількість Ціна
2+282.90 грн
50+155.26 грн
Мінімальне замовлення: 2
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NCP4305DDR2G ncp4305-d.pdf
NCP4305DDR2G
Виробник: ONSEMI
Category: Voltage regulators - DC/DC circuits
Description: IC: PMIC; SO8; flyback,forward,resonant LLC; 7.8÷37VDC
Type of integrated circuit: PMIC
Frequency: 1MHz
Mounting: SMD
Case: SO8
Topology: flyback; forward; resonant LLC
Operating temperature: -40...125°C
Output current: 4...8A
Number of channels: 1
Operating voltage: 7.8...37V DC
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NCP4305DMNTWG ncp4305-d.pdf
Виробник: ONSEMI
Category: Voltage regulators - DC/DC circuits
Description: IC: PMIC; DFN8; flyback,forward,resonant LLC; 7.8÷37VDC
Type of integrated circuit: PMIC
Frequency: 1MHz
Mounting: SMD
Case: DFN8
Topology: flyback; forward; resonant LLC
Operating temperature: -40...125°C
Output current: 4...8A
Number of channels: 1
Operating voltage: 7.8...37V DC
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NCP4305DMTTWG ncp4305-d.pdf
Виробник: ONSEMI
Category: Voltage regulators - DC/DC circuits
Description: IC: PMIC; WDFN8; flyback,forward,resonant LLC; 7.8÷37VDC
Type of integrated circuit: PMIC
Frequency: 1MHz
Mounting: SMD
Case: WDFN8
Topology: flyback; forward; resonant LLC
Operating temperature: -40...125°C
Output current: 4...8A
Number of channels: 1
Operating voltage: 7.8...37V DC
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CAT25256VI-GT3 CAT25256-D.pdf
Виробник: ONSEMI
Category: Serial EEPROM memories - integ. circ.
Description: IC: EEPROM memory; 256kbEEPROM; SPI; 32kx8bit; 1.8÷5.5V; 20MHz
Type of integrated circuit: EEPROM memory
Kind of memory: EEPROM
Memory: 256kb EEPROM
Interface: SPI
Memory organisation: 32kx8bit
Operating voltage: 1.8...5.5V
Clock frequency: 20MHz
Mounting: SMD
Case: SOIC8
Kind of interface: serial
Operating temperature: -40...85°C
Access time: 40ns
Kind of package: reel; tape
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CAT25256YI-GT3 CAT25256-D.pdf
Виробник: ONSEMI
Category: Serial EEPROM memories - integ. circ.
Description: IC: EEPROM memory; 256kbEEPROM; SPI; 32kx8bit; 1.8÷5.5V; 20MHz
Type of integrated circuit: EEPROM memory
Kind of memory: EEPROM
Memory: 256kb EEPROM
Interface: SPI
Memory organisation: 32kx8bit
Operating voltage: 1.8...5.5V
Clock frequency: 20MHz
Mounting: SMD
Case: TSSOP8
Kind of interface: serial
Operating temperature: -40...85°C
Access time: 40ns
Kind of package: reel; tape
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CAT25256XI-T2 CAT25256-D.pdf
Виробник: ONSEMI
Category: Serial EEPROM memories - integ. circ.
Description: IC: EEPROM memory; 256kbEEPROM; SPI; 32kx8bit; 1.8÷5.5V; 20MHz
Type of integrated circuit: EEPROM memory
Kind of memory: EEPROM
Memory: 256kb EEPROM
Interface: SPI
Memory organisation: 32kx8bit
Operating voltage: 1.8...5.5V
Clock frequency: 20MHz
Mounting: SMD
Case: SOIC8
Kind of interface: serial
Operating temperature: -40...85°C
Access time: 40ns
Kind of package: reel; tape
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NCS29001DR2G NCS29001.PDF
NCS29001DR2G
Виробник: ONSEMI
Category: LED drivers
Description: IC: driver; LED driver; SO14; Ch: 1; 8.5÷18V
Operating temperature: -40...85°C
Mounting: SMD
Input voltage: 8.5...18V
Kind of integrated circuit: LED driver
Type of integrated circuit: driver
Case: SO14
Integrated circuit features: PWM; soft-start function; UVLO (UnderVoltage LockOut)
Number of channels: 1
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NSVDTC143ZET1G dtc143z-d.pdf
Виробник: ONSEMI
Category: NPN SMD transistors
Description: Transistor: NPN; bipolar; BRT; 50V; 100mA; 300mW; SC75,SOT416
Type of transistor: NPN
Polarisation: bipolar
Kind of transistor: BRT
Collector-emitter voltage: 50V
Collector current: 0.1A
Power dissipation: 0.3W
Case: SC75; SOT416
Current gain: 80...200
Mounting: SMD
Quantity in set/package: 3000pcs.
Kind of package: reel; tape
Base resistor: 4.7kΩ
Application: automotive industry
Base-emitter resistor: 47kΩ
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BZX84C33LT1G BZX84B_BZX84C.PDF
BZX84C33LT1G
Виробник: ONSEMI
Category: SMD Zener diodes
Description: Diode: Zener; 0.3W; 33V; SMD; reel,tape; SOT23; single diode; BZX84C
Type of diode: Zener
Power dissipation: 0.3W
Zener voltage: 33V
Mounting: SMD
Tolerance: ±5%
Kind of package: reel; tape
Case: SOT23
Semiconductor structure: single diode
Manufacturer series: BZX84C
на замовлення 15000 шт:
термін постачання 14-30 дні (днів)
Кількість Ціна
63+7.23 грн
100+4.20 грн
150+2.80 грн
181+2.32 грн
500+1.59 грн
1000+1.38 грн
1500+1.27 грн
3000+1.16 грн
Мінімальне замовлення: 63
В кошику  од. на суму  грн.
MC74HC175ADG MC74HC175A-D.pdf
MC74HC175ADG
Виробник: ONSEMI
Category: Flip-Flops
Description: IC: digital; D flip-flop; Ch: 4; CMOS; HC; SMD; SO16; tube
Type of integrated circuit: digital
Kind of integrated circuit: D flip-flop
Number of channels: 4
Technology: CMOS
Mounting: SMD
Case: SO16
Operating temperature: -55...125°C
Supply voltage: 2...6V DC
Kind of package: tube
Manufacturer series: HC
Trigger: positive-edge-triggered
на замовлення 21 шт:
термін постачання 14-30 дні (днів)
Кількість Ціна
10+47.90 грн
18+24.59 грн
Мінімальне замовлення: 10
В кошику  од. на суму  грн.
MC74HC175ADR2G MC74HC175A-D.pdf
MC74HC175ADR2G
Виробник: ONSEMI
Category: Flip-Flops
Description: IC: digital; D flip-flop; Ch: 4; CMOS; HC; SMD; SO16; reel,tape
Type of integrated circuit: digital
Kind of integrated circuit: D flip-flop
Number of channels: 4
Technology: CMOS
Mounting: SMD
Case: SO16
Operating temperature: -55...125°C
Supply voltage: 2...6V DC
Kind of package: reel; tape
Manufacturer series: HC
Trigger: positive-edge-triggered
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MC74HC175ADTR2G MC74HC175A-D.pdf
Виробник: ONSEMI
Category: Flip-Flops
Description: IC: digital; D flip-flop; Ch: 4; CMOS; HC; SMD; TSSOP16; HC; reel,tape
Type of integrated circuit: digital
Kind of integrated circuit: D flip-flop
Number of channels: 4
Technology: CMOS
Mounting: SMD
Case: TSSOP16
Operating temperature: -55...125°C
Family: HC
Supply voltage: 2...6V DC
Kind of package: reel; tape
Manufacturer series: HC
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MM74HC175M MM74HC175-D.pdf
MM74HC175M
Виробник: ONSEMI
Category: Flip-Flops
Description: IC: digital; D flip-flop; Ch: 4; CMOS; HC; SMD; SO16; tube
Type of integrated circuit: digital
Kind of integrated circuit: D flip-flop
Number of channels: 4
Technology: CMOS
Mounting: SMD
Case: SO16
Operating temperature: -40...85°C
Supply voltage: 2...6V DC
Kind of package: tube
Manufacturer series: HC
Trigger: positive-edge-triggered
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MM74HC175MTCX MM74HC175-D.pdf
Виробник: ONSEMI
Category: Flip-Flops
Description: IC: digital; D flip-flop; Ch: 4; CMOS; HC; SMD; TSSOP16; HC; reel,tape
Type of integrated circuit: digital
Kind of integrated circuit: D flip-flop
Number of channels: 4
Technology: CMOS
Mounting: SMD
Case: TSSOP16
Operating temperature: -55...125°C
Family: HC
Supply voltage: 2...6V DC
Kind of package: reel; tape
Manufacturer series: HC
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MM74HC175MX MM74HC175-D.pdf
MM74HC175MX
Виробник: ONSEMI
Category: Flip-Flops
Description: IC: digital; D flip-flop; Ch: 4; CMOS; HC; SMD; SO16; reel,tape
Type of integrated circuit: digital
Kind of integrated circuit: D flip-flop
Number of channels: 4
Technology: CMOS
Mounting: SMD
Case: SO16
Operating temperature: -40...85°C
Supply voltage: 2...6V DC
Kind of package: reel; tape
Manufacturer series: HC
Trigger: positive-edge-triggered
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FSV20120V fsv20120v-d.pdf
Виробник: ONSEMI
Category: SMD Schottky diodes
Description: Diode: Schottky rectifying; TO277; SMD; 120V; 20A; reel,tape
Type of diode: Schottky rectifying
Case: TO277
Mounting: SMD
Max. off-state voltage: 120V
Load current: 20A
Semiconductor structure: single diode
Max. forward voltage: 0.79V
Max. forward impulse current: 270A
Kind of package: reel; tape
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MC10EP16DG mc10ep16-d.pdf
Виробник: ONSEMI
Category: Other logic integrated circuits
Description: IC: digital; receiver,differential; Ch: 1; ECL; SMD; SOIC8; 3÷5.5V
Type of integrated circuit: digital
Kind of integrated circuit: differential; receiver
Number of channels: 1
Technology: ECL
Mounting: SMD
Case: SOIC8
Operating temperature: -40...85°C
Supply voltage: 3...5.5V
Integrated circuit features: differential
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NDP6060L NDB6060L.pdf
NDP6060L
Виробник: ONSEMI
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 60V; 48A; 100W; TO220AB
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 60V
Drain current: 48A
Power dissipation: 100W
Case: TO220AB
Gate-source voltage: ±16V
On-state resistance: 40mΩ
Mounting: THT
Kind of package: tube
Kind of channel: enhancement
Features of semiconductor devices: logic level
Gate charge: 60nC
на замовлення 42 шт:
термін постачання 14-30 дні (днів)
Кількість Ціна
3+216.92 грн
10+152.75 грн
30+145.19 грн
Мінімальне замовлення: 3
В кошику  од. на суму  грн.
NDS352AP NDS352AP.pdf
NDS352AP
Виробник: ONSEMI
Category: SMD P channel transistors
Description: Transistor: P-MOSFET; unipolar; -30V; -0.9A; 0.5W; SuperSOT-3
Type of transistor: P-MOSFET
Polarisation: unipolar
Drain-source voltage: -30V
Drain current: -900mA
Power dissipation: 0.5W
Case: SuperSOT-3
Gate-source voltage: ±20V
On-state resistance: 0.7Ω
Mounting: SMD
Kind of package: reel; tape
Kind of channel: enhancement
Features of semiconductor devices: logic level
Gate charge: 3nC
на замовлення 14 шт:
термін постачання 14-30 дні (днів)
Кількість Ціна
8+63.27 грн
11+40.79 грн
13+32.31 грн
Мінімальне замовлення: 8
В кошику  од. на суму  грн.
FDV304P FDV304P.pdf
FDV304P
Виробник: ONSEMI
Category: SMD P channel transistors
Description: Transistor: P-MOSFET; unipolar; -25V; -0.46A; 0.35W; SOT23
Type of transistor: P-MOSFET
Polarisation: unipolar
Drain-source voltage: -25V
Drain current: -0.46A
Power dissipation: 0.35W
Case: SOT23
Gate-source voltage: ±8V
On-state resistance: 2Ω
Mounting: SMD
Kind of package: reel; tape
Kind of channel: enhancement
Features of semiconductor devices: logic level
Gate charge: 1.5nC
на замовлення 7274 шт:
термін постачання 14-30 дні (днів)
Кількість Ціна
63+7.23 грн
74+5.71 грн
99+4.28 грн
112+3.77 грн
500+2.90 грн
1000+2.70 грн
3000+2.51 грн
6000+2.43 грн
Мінімальне замовлення: 63
В кошику  од. на суму  грн.
FDV301N FDV301N.pdf
FDV301N
Виробник: ONSEMI
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 25V; 0.22A; 0.35W; SOT23
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 25V
Drain current: 0.22A
Power dissipation: 0.35W
Case: SOT23
Gate-source voltage: ±8V
On-state resistance: 9Ω
Mounting: SMD
Kind of package: reel; tape
Kind of channel: enhancement
Features of semiconductor devices: logic level
Gate charge: 0.7nC
на замовлення 43470 шт:
термін постачання 14-30 дні (днів)
Кількість Ціна
46+9.94 грн
63+6.71 грн
71+5.96 грн
100+4.20 грн
120+3.52 грн
500+2.32 грн
1000+2.15 грн
3000+1.94 грн
6000+1.84 грн
Мінімальне замовлення: 46
В кошику  од. на суму  грн.
FDV303N FDV303N.pdf
FDV303N
Виробник: ONSEMI
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 25V; 0.68A; 0.35W; SOT23
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 25V
Drain current: 0.68A
Power dissipation: 0.35W
Case: SOT23
Gate-source voltage: ±8V
On-state resistance: 0.8Ω
Mounting: SMD
Kind of package: reel; tape
Kind of channel: enhancement
Features of semiconductor devices: logic level
Gate charge: 2.3nC
на замовлення 362 шт:
термін постачання 14-30 дні (днів)
Кількість Ціна
20+23.50 грн
48+8.81 грн
60+7.05 грн
100+6.39 грн
Мінімальне замовлення: 20
В кошику  од. на суму  грн.
FDN360P FDN360P.pdf
FDN360P
Виробник: ONSEMI
Category: SMD P channel transistors
Description: Transistor: P-MOSFET; unipolar; -30V; -2A; 0.5W; SuperSOT-3
Type of transistor: P-MOSFET
Polarisation: unipolar
Drain-source voltage: -30V
Drain current: -2A
Power dissipation: 0.5W
Case: SuperSOT-3
Gate-source voltage: ±20V
On-state resistance: 136mΩ
Mounting: SMD
Kind of package: reel; tape
Kind of channel: enhancement
Features of semiconductor devices: logic level
Technology: PowerTrench®
Gate charge: 9nC
на замовлення 6826 шт:
термін постачання 14-30 дні (днів)
Кількість Ціна
11+41.58 грн
15+29.54 грн
17+25.51 грн
50+17.96 грн
100+15.53 грн
500+11.41 грн
1000+10.16 грн
3000+8.56 грн
6000+8.06 грн
Мінімальне замовлення: 11
В кошику  од. на суму  грн.
FDC658AP FDC658AP.pdf
FDC658AP
Виробник: ONSEMI
Category: SMD P channel transistors
Description: Transistor: P-MOSFET; unipolar; -30V; -4A; 1.6W; SuperSOT-6
Type of transistor: P-MOSFET
Polarisation: unipolar
Drain-source voltage: -30V
Drain current: -4A
Power dissipation: 1.6W
Case: SuperSOT-6
Gate-source voltage: ±25V
On-state resistance: 75mΩ
Mounting: SMD
Kind of package: reel; tape
Kind of channel: enhancement
Features of semiconductor devices: logic level
Technology: PowerTrench®
Gate charge: 8.1nC
на замовлення 1202 шт:
термін постачання 14-30 дні (днів)
Кількість Ціна
9+56.04 грн
10+43.31 грн
12+38.02 грн
50+26.52 грн
100+22.66 грн
500+16.45 грн
Мінімальне замовлення: 9
В кошику  од. на суму  грн.
FDN327N FDN327N.pdf
FDN327N
Виробник: ONSEMI
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 20V; 2A; 0.5W; SuperSOT-3
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 20V
Drain current: 2A
Power dissipation: 0.5W
Case: SuperSOT-3
Gate-source voltage: ±8V
On-state resistance: 0.12Ω
Mounting: SMD
Kind of package: reel; tape
Kind of channel: enhancement
Features of semiconductor devices: logic level
Technology: PowerTrench®
Gate charge: 6.3nC
на замовлення 1836 шт:
термін постачання 14-30 дні (днів)
Кількість Ціна
12+37.96 грн
15+28.54 грн
17+24.84 грн
50+17.04 грн
100+14.52 грн
500+10.41 грн
1000+9.32 грн
1500+8.64 грн
Мінімальне замовлення: 12
В кошику  од. на суму  грн.
ADT7461AARMZ-R adt7461a-d.pdf
Виробник: ONSEMI
Category: Temperature transducers
Description: IC: temperature sensor; MSOP8; 3÷3.6VDC; -40÷120°C; 2.55V
Case: MSOP8
Operating temperature: -40...120°C
Supply voltage: 3...3.6V DC
Threshold on-voltage: 2.55V
Type of integrated circuit: temperature sensor
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ADT7461ARMZ-R7 adt7461-d.pdf
Виробник: ONSEMI
Category: Temperature transducers
Description: IC: temperature sensor; MSOP8; 3÷3.6VDC; -40÷120°C; 2.55V
Case: MSOP8
Operating temperature: -40...120°C
Supply voltage: 3...3.6V DC
Threshold on-voltage: 2.55V
Type of integrated circuit: temperature sensor
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ADT7461ARZ-REEL adt7461-d.pdf
Виробник: ONSEMI
Category: Temperature transducers
Description: IC: temperature sensor; MSOP8; 3÷3.6VDC; -40÷120°C; 2.55V
Case: MSOP8
Operating temperature: -40...120°C
Supply voltage: 3...3.6V DC
Threshold on-voltage: 2.55V
Type of integrated circuit: temperature sensor
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MC10EP89DTG mc10ep89-d.pdf
Виробник: ONSEMI
Category: Other logic integrated circuits
Description: IC: driver; ECL; MSOP8; Ch: 1; 3÷5.5V
Case: MSOP8
Mounting: SMD
Number of channels: 1
Operating temperature: -40...85°C
Supply voltage: 3...5.5V
Type of integrated circuit: driver
Technology: ECL
товару немає в наявності
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NSR1020MW2T1G nsr1020mw2t1-d.pdf
Виробник: ONSEMI
Category: SMD Schottky diodes
Description: Diode: Schottky rectifying; SOD323; SMD; 20V; 1A; reel,tape
Type of diode: Schottky rectifying
Case: SOD323
Mounting: SMD
Max. off-state voltage: 20V
Load current: 1A
Semiconductor structure: single diode
Max. forward voltage: 0.54V
Kind of package: reel; tape
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В кошику  од. на суму  грн.
MMBT2222A MMBT2222A.pdf
MMBT2222A
Виробник: ONSEMI
Category: NPN SMD transistors
Description: Transistor: NPN; bipolar; 40V; 1A; 1W; SOT23,TO236AB
Type of transistor: NPN
Polarisation: bipolar
Collector-emitter voltage: 40V
Collector current: 1A
Power dissipation: 1W
Case: SOT23; TO236AB
Mounting: SMD
Kind of package: reel; tape
Frequency: 300MHz
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20414-009-XTD
Виробник: ONSEMI
Category: Unclassified
Description: 20414-009-XTD
на замовлення 1 шт:
термін постачання 14-30 дні (днів)
Кількість Ціна
1+36165.60 грн
В кошику  од. на суму  грн.
MBR360RLG MBR360RLG.PDF
MBR360RLG
Виробник: ONSEMI
Category: THT Schottky diodes
Description: Diode: Schottky rectifying; THT; 60V; 3A; DO201AD; Ufmax: 1.08V
Type of diode: Schottky rectifying
Mounting: THT
Max. off-state voltage: 60V
Load current: 3A
Semiconductor structure: single diode
Case: DO201AD
Max. forward voltage: 1.08V
Max. forward impulse current: 80A
на замовлення 4039 шт:
термін постачання 14-30 дні (днів)
Кількість Ціна
21+21.69 грн
23+18.30 грн
25+17.37 грн
50+15.27 грн
100+14.27 грн
500+12.42 грн
1000+11.33 грн
1500+11.16 грн
Мінімальне замовлення: 21
В кошику  од. на суму  грн.
FGY160T65SPD-F085 fgy160t65spd-f085-d.pdf
FGY160T65SPD-F085
+1
Виробник: ONSEMI
Category: THT IGBT transistors
Description: Transistor: IGBT; 650V; 160A; 441W; TO247-3
Type of transistor: IGBT
Collector-emitter voltage: 650V
Collector current: 160A
Power dissipation: 441W
Case: TO247-3
Gate-emitter voltage: ±20V
Pulsed collector current: 480A
Mounting: THT
Gate charge: 163nC
Kind of package: tube
на замовлення 5 шт:
термін постачання 14-30 дні (днів)
Кількість Ціна
1+1036.69 грн
5+868.64 грн
В кошику  од. на суму  грн.
AFGY160T65SPD-B4 afgy160t65spd-b4-d.pdf
Виробник: ONSEMI
Category: THT IGBT transistors
Description: Transistor: IGBT; 650V; 160A; 441W; TO247-3
Type of transistor: IGBT
Collector-emitter voltage: 650V
Collector current: 160A
Power dissipation: 441W
Case: TO247-3
Gate-emitter voltage: ±20V
Pulsed collector current: 480A
Mounting: THT
Gate charge: 163nC
Kind of package: tube
товару немає в наявності
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FCD360N65S3R0 fcd360n65s3r0-d.pdf
Виробник: ONSEMI
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; 650V; 10A; 83W; DPAK; single transistor
Type of transistor: N-MOSFET
Drain-source voltage: 650V
Drain current: 10A
Case: DPAK
Gate-source voltage: 30V
Mounting: SMD
Kind of channel: enhancement
On-state resistance: 0.36Ω
Power dissipation: 83W
Technology: PowerTrench®
Semiconductor structure: single transistor
Gate charge: 18nC
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FCPF360N65S3R0L-F154 fcpf360n65s3r0l-f154-d.pdf
Виробник: ONSEMI
Category: THT N channel transistors
Description: Transistor: N-MOSFET; N; 650V; 10A; 27W; TO220
Type of transistor: N-MOSFET
Polarisation: N
Drain-source voltage: 650V
Drain current: 10A
Case: TO220
Gate-source voltage: 30V
Mounting: THT
Kind of channel: enhancement
On-state resistance: 0.36Ω
Power dissipation: 27W
Technology: PowerTrench®
Gate charge: 18nC
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MM74HCT574WM MM74HCT573-D.pdf
MM74HCT574WM
Виробник: ONSEMI
Category: Flip-Flops
Description: IC: digital; D flip-flop; Ch: 8; CMOS; HCT; SMD; SO20-W; OUT: 3-state
Type of integrated circuit: digital
Kind of integrated circuit: D flip-flop
Number of channels: 8
Mounting: SMD
Case: SO20-W
Operating temperature: -40...85°C
Kind of output: 3-state
Trigger: positive-edge-triggered
Technology: CMOS
Manufacturer series: HCT
Kind of package: tube
Supply voltage: 4.5...5.5V DC
на замовлення 272 шт:
термін постачання 14-30 дні (днів)
Кількість Ціна
7+69.59 грн
10+45.32 грн
25+41.38 грн
38+39.45 грн
114+37.26 грн
Мінімальне замовлення: 7
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74VHCT574AM 74VHCT574A-D.pdf
74VHCT574AM
Виробник: ONSEMI
Category: Flip-Flops
Description: IC: digital; D flip-flop; Ch: 8; CMOS; VHCT; SMD; SO20-W; OUT: 3-state
Type of integrated circuit: digital
Kind of integrated circuit: D flip-flop
Number of channels: 8
Mounting: SMD
Case: SO20-W
Operating temperature: -40...85°C
Kind of output: 3-state
Trigger: positive-edge-triggered
Technology: CMOS
Manufacturer series: VHCT
Kind of package: tube
Supply voltage: 4.5...5.5V DC
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74VHCT574AMTC 74VHCT574A-D.pdf
74VHCT574AMTC
Виробник: ONSEMI
Category: Flip-Flops
Description: IC: digital; D flip-flop; Ch: 8; CMOS; VHCT; SMD; TSSOP20; tube
Type of integrated circuit: digital
Kind of integrated circuit: D flip-flop
Number of channels: 8
Mounting: SMD
Case: TSSOP20
Operating temperature: -40...85°C
Kind of output: 3-state
Trigger: positive-edge-triggered
Technology: CMOS
Manufacturer series: VHCT
Kind of package: tube
Supply voltage: 4.5...5.5V DC
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74VHCT574AMTCX 74VHCT574A-D.pdf
74VHCT574AMTCX
Виробник: ONSEMI
Category: Flip-Flops
Description: IC: digital; D flip-flop; Ch: 8; CMOS; VHCT; SMD; TSSOP20; reel,tape
Type of integrated circuit: digital
Kind of integrated circuit: D flip-flop
Number of channels: 8
Mounting: SMD
Case: TSSOP20
Operating temperature: -40...85°C
Kind of output: 3-state
Trigger: positive-edge-triggered
Technology: CMOS
Manufacturer series: VHCT
Kind of package: reel; tape
Supply voltage: 4.5...5.5V DC
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MM74HCT574WMX MM74HCT573-D.pdf
MM74HCT574WMX
Виробник: ONSEMI
Category: Flip-Flops
Description: IC: digital; D flip-flop; Ch: 8; CMOS; HCT; SMD; SO20-W; OUT: 3-state
Type of integrated circuit: digital
Kind of integrated circuit: D flip-flop
Number of channels: 8
Mounting: SMD
Case: SO20-W
Operating temperature: -40...85°C
Kind of output: 3-state
Trigger: positive-edge-triggered
Technology: CMOS
Manufacturer series: HCT
Kind of package: reel; tape
Supply voltage: 4.5...5.5V DC
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MC74HCT574ADTR2G MC74HCT574A-D.pdf
MC74HCT574ADTR2G
Виробник: ONSEMI
Category: Flip-Flops
Description: IC: digital; D flip-flop; Ch: 8; CMOS; HCT; SMD; TSSOP20; reel,tape
Type of integrated circuit: digital
Kind of integrated circuit: D flip-flop
Number of channels: 8
Mounting: SMD
Case: TSSOP20
Operating temperature: -55...125°C
Kind of output: 3-state; non-inverting
Trigger: positive-edge-triggered
Technology: CMOS
Manufacturer series: HCT
Kind of package: reel; tape
Supply voltage: 4.5...5.5V DC
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MC74HCT574ADWR2G MC74HCT574A-D.pdf
Виробник: ONSEMI
Category: Flip-Flops
Description: IC: digital; 3-state,octal,D flip-flop; Ch: 8; CMOS,TTL; HCT; SMD
Type of integrated circuit: digital
Kind of integrated circuit: 3-state; D flip-flop; octal
Number of channels: 8
Mounting: SMD
Operating temperature: -55...125°C
Family: HCT
Kind of output: 3-state
Technology: CMOS; TTL
Manufacturer series: HCT
Kind of package: reel; tape
Supply voltage: 4.5...5.5V DC
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MM74HCT574MTCX MM74HCT573-D.pdf
MM74HCT574MTCX
Виробник: ONSEMI
Category: Flip-Flops
Description: IC: digital; D flip-flop; Ch: 8; CMOS; HCT; SMD; TSSOP20; OUT: 3-state
Type of integrated circuit: digital
Kind of integrated circuit: D flip-flop
Number of channels: 8
Mounting: SMD
Case: TSSOP20
Operating temperature: -40...85°C
Kind of output: 3-state
Trigger: positive-edge-triggered
Technology: CMOS
Manufacturer series: HCT
Kind of package: reel; tape
Supply voltage: 4.5...5.5V DC
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MM74HCT574SJX MM74HCT573-D.pdf
MM74HCT574SJX
Виробник: ONSEMI
Category: Flip-Flops
Description: IC: digital; D flip-flop; Ch: 8; CMOS; HCT; SMD; SOP20; OUT: 3-state
Type of integrated circuit: digital
Kind of integrated circuit: D flip-flop
Number of channels: 8
Mounting: SMD
Case: SOP20
Operating temperature: -40...85°C
Kind of output: 3-state
Trigger: positive-edge-triggered
Technology: CMOS
Manufacturer series: HCT
Kind of package: reel; tape
Supply voltage: 4.5...5.5V DC
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