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NL17SZ17DFT2G NL17SZ17DFT2G ONSEMI pVersion=0046&contRep=ZT&docId=005056AB90B41EDAAAE0491F7A9980C7&compId=NL17SZ17DFT2G.pdf?ci_sign=f856f1440f37861916bb71251ff9f19a7ddfc4af Category: Buffers, transceivers, drivers
Description: IC: digital; buffer,non-inverting; Ch: 1; SMD; SC88A; -55÷125°C
Type of integrated circuit: digital
Mounting: SMD
Kind of input: with Schmitt trigger
Operating temperature: -55...125°C
Number of channels: 1
Kind of integrated circuit: buffer; non-inverting
Supply voltage: 1.65...5.5V DC
Case: SC88A
на замовлення 1941 шт:
термін постачання 21-30 дні (днів)
42+10.28 грн
70+5.73 грн
76+5.25 грн
85+4.71 грн
100+4.09 грн
250+3.75 грн
402+2.32 грн
1104+2.20 грн
Мінімальне замовлення: 42
В кошику  од. на суму  грн.
NL17SZ17DFT2G-Q ONSEMI nl17sz17-d.pdf Category: Buffers, transceivers, drivers
Description: IC: digital
Type of integrated circuit: digital
на замовлення 6000 шт:
термін постачання 21-30 дні (днів)
3000+2.41 грн
Мінімальне замовлення: 3000
В кошику  од. на суму  грн.
NTMFS008N12MCT1G ONSEMI ntmfs008n12mc-d.pdf Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 120V; 79A; Idm: 352A; 40W; SO8
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 120V
Drain current: 79A
Pulsed drain current: 352A
Power dissipation: 40W
Case: SO8
Gate-source voltage: ±20V
On-state resistance: 8mΩ
Mounting: SMD
Gate charge: 33nC
Kind of package: reel; tape
Kind of channel: enhancement
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MRA4005T3G MRA4005T3G ONSEMI pVersion=0046&contRep=ZT&docId=005056AB752F1ED6A7EC99F014E1DE27&compId=MRA4006T3G-DTE.PDF?ci_sign=07e05b91c4facf205775ca0b12034b0218906c4f Category: SMD universal diodes
Description: Diode: rectifying; SMD; 600V; 1A; SMA; Ufmax: 1.18V; reel,tape
Type of diode: rectifying
Mounting: SMD
Max. off-state voltage: 0.6kV
Load current: 1A
Semiconductor structure: single diode
Case: SMA
Max. forward voltage: 1.18V
Max. load current: 30A
Kind of package: reel; tape
на замовлення 3777 шт:
термін постачання 21-30 дні (днів)
36+11.99 грн
49+8.27 грн
64+6.25 грн
100+5.58 грн
218+4.29 грн
598+4.06 грн
1000+3.99 грн
2000+3.90 грн
Мінімальне замовлення: 36
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MBR0520L MBR0520L ONSEMI pVersion=0046&contRep=ZT&docId=E20E078571710BF1A303005056AB0C4F&compId=MBR0520L.pdf?ci_sign=e7310b509a77c1d9d841d4aa129db63a5927b2f8 Category: SMD Schottky diodes
Description: Diode: Schottky switching; SOD123; SMD; 20V; 0.5A; reel,tape
Type of diode: Schottky switching
Case: SOD123
Mounting: SMD
Max. off-state voltage: 20V
Load current: 0.5A
Semiconductor structure: single diode
Max. forward impulse current: 5.5A
Kind of package: reel; tape
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MC74ACT273DTR2G ONSEMI pVersion=0046&contRep=ZT&docId=005056AB281E1EDDA4E62AA252D1A0D3&compId=MC74AC273-D.pdf?ci_sign=3ecebe29d8d884f91b1ca82b9582418f72a9f82c Category: Flip-Flops
Description: IC: digital; octal,D flip-flop; Ch: 8; TTL; ACT; SMD; TSSOP20; ACT
Type of integrated circuit: digital
Kind of integrated circuit: D flip-flop; octal
Number of channels: 8
Technology: TTL
Manufacturer series: ACT
Mounting: SMD
Case: TSSOP20
Operating temperature: -40...85°C
Supply voltage: 4.5...5.5V DC
Kind of package: reel; tape
Family: ACT
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MC74ACT273DWR2G ONSEMI pVersion=0046&contRep=ZT&docId=005056AB281E1EDDA4E62ADFEF56C0D3&compId=MC74AC273-D.pdf?ci_sign=9cd9cae301874d8c90a6fd0448e57e7b447bb848 Category: Flip-Flops
Description: IC: digital; octal,D flip-flop; Ch: 8; TTL; ACT; SMD; SO20WB; ACT
Type of integrated circuit: digital
Kind of integrated circuit: D flip-flop; octal
Number of channels: 8
Technology: TTL
Manufacturer series: ACT
Mounting: SMD
Case: SO20WB
Operating temperature: -40...85°C
Supply voltage: 4.5...5.5V DC
Kind of package: reel; tape
Family: ACT
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NRVHP160SFT3G ONSEMI nhp160sf-d.pdf Category: SMD universal diodes
Description: Diode: rectifying; SMD; 600V; 1A; SOD123F; reel,tape
Type of diode: rectifying
Mounting: SMD
Max. off-state voltage: 0.6kV
Load current: 1A
Semiconductor structure: single diode
Case: SOD123F
Kind of package: reel; tape
Application: automotive industry
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NCS20084DR2G ONSEMI ncs2008-d.pdf Category: SMD operational amplifiers
Description: IC: operational amplifier; 1.2MHz; SO14; 1.8÷5.5VDC; reel,tape
Mounting: SMT
Type of integrated circuit: operational amplifier
Number of channels: quad
Kind of package: reel; tape
Case: SO14
Operating temperature: -40...125°C
Input bias current: 1pA
Input offset current: 1pA
Input offset voltage: 3.5mV
Slew rate: 0.4V/μs
Voltage supply range: 1.8...5.5V DC
Bandwidth: 1.2MHz
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NCS20084DTBR2G ONSEMI ncs2008-d.pdf Category: SMD operational amplifiers
Description: IC: operational amplifier; 1.2MHz; TSSOP14; 1.8÷5.5VDC; reel,tape
Mounting: SMT
Type of integrated circuit: operational amplifier
Number of channels: quad
Kind of package: reel; tape
Case: TSSOP14
Operating temperature: -40...125°C
Input bias current: 1pA
Input offset current: 1pA
Input offset voltage: 3.5mV
Slew rate: 0.4V/μs
Voltage supply range: 1.8...5.5V DC
Bandwidth: 1.2MHz
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NCV20084DR2G ONSEMI ncs2008-d.pdf Category: SMD operational amplifiers
Description: IC: operational amplifier; 1.2MHz; SO14; 1.8÷5.5VDC; reel,tape
Mounting: SMT
Type of integrated circuit: operational amplifier
Number of channels: quad
Kind of package: reel; tape
Case: SO14
Operating temperature: -40...125°C
Input bias current: 1pA
Input offset current: 1pA
Input offset voltage: 3.5mV
Slew rate: 0.4V/μs
Voltage supply range: 1.8...5.5V DC
Bandwidth: 1.2MHz
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NCV20084DTBR2G ONSEMI ncs2008-d.pdf Category: SMD operational amplifiers
Description: IC: operational amplifier; 1.2MHz; TSSOP14; 1.8÷5.5VDC; reel,tape
Mounting: SMT
Type of integrated circuit: operational amplifier
Number of channels: quad
Kind of package: reel; tape
Case: TSSOP14
Operating temperature: -40...125°C
Input bias current: 1pA
Input offset current: 1pA
Input offset voltage: 3.5mV
Slew rate: 0.4V/μs
Voltage supply range: 1.8...5.5V DC
Bandwidth: 1.2MHz
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NTMFSC011N08M7 ONSEMI ntmfsc011n08m7-d.pdf Category: Multi channel transistors
Description: Transistor: N-MOSFET x2; unipolar; 80V; 61A; Idm: 180A; 31.2W; DFN8
Type of transistor: N-MOSFET x2
Polarisation: unipolar
Drain-source voltage: 80V
Drain current: 61A
Pulsed drain current: 180A
Power dissipation: 31.2W
Case: DFN8
Gate-source voltage: ±20V
On-state resistance: 10mΩ
Mounting: SMD
Gate charge: 29.3nC
Kind of package: reel; tape
Kind of channel: enhancement
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MMSZ4704T1G MMSZ4704T1G ONSEMI pVersion=0046&contRep=ZT&docId=005056AB281E1EDFB4CFEB7388A7C0D8&compId=MMSZ4xxxT1G.PDF?ci_sign=a85907a4b31579eb401f684e4c002657dc7dfe7a Category: SMD Zener diodes
Description: Diode: Zener; 0.5W; 17V; SMD; reel,tape; SOD123; single diode
Type of diode: Zener
Power dissipation: 0.5W
Zener voltage: 17V
Mounting: SMD
Tolerance: ±5%
Kind of package: reel; tape
Case: SOD123
Semiconductor structure: single diode
Leakage current: 50nA
Manufacturer series: MMSZ4xxT1G
на замовлення 3095 шт:
термін постачання 21-30 дні (днів)
72+6.00 грн
97+4.14 грн
121+3.31 грн
174+2.30 грн
546+1.71 грн
1000+1.56 грн
Мінімальне замовлення: 72
В кошику  од. на суму  грн.
SZMMSZ4704T1G ONSEMI pVersion=0046&contRep=ZT&docId=005056AB281E1EDFB4CFEB7388A7C0D8&compId=MMSZ4xxxT1G.PDF?ci_sign=a85907a4b31579eb401f684e4c002657dc7dfe7a Category: SMD Zener diodes
Description: Diode: Zener; 0.5W; 17V; SMD; reel,tape; SOD123; single diode
Type of diode: Zener
Power dissipation: 0.5W
Zener voltage: 17V
Mounting: SMD
Tolerance: ±5%
Kind of package: reel; tape
Case: SOD123
Semiconductor structure: single diode
Leakage current: 50nA
Manufacturer series: MMSZ4xxT1G
Application: automotive industry
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BAV70LT3G BAV70LT3G ONSEMI bav70lt1-d.pdf Category: SMD universal diodes
Description: Diode: switching; SMD; 100V; 0.2A; 6ns; SOT23; Ufmax: 1.25V; Ifsm: 31A
Type of diode: switching
Mounting: SMD
Max. off-state voltage: 100V
Load current: 0.2A
Reverse recovery time: 6ns
Semiconductor structure: common cathode; double
Capacitance: 1.5pF
Case: SOT23
Max. forward voltage: 1.25V
Max. forward impulse current: 31A
Leakage current: 0.1mA
Power dissipation: 0.3W
Kind of package: reel; tape
Max. load current: 0.5A
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SBAV70LT3G SBAV70LT3G ONSEMI bav70lt1-d.pdf Category: SMD universal diodes
Description: Diode: switching; SMD; 100V; 0.2A; 6ns; SOT23; Ufmax: 1.25V; Ifsm: 31A
Type of diode: switching
Mounting: SMD
Max. off-state voltage: 100V
Load current: 0.2A
Reverse recovery time: 6ns
Semiconductor structure: common cathode; double
Capacitance: 1.5pF
Case: SOT23
Max. forward voltage: 1.25V
Max. forward impulse current: 31A
Leakage current: 0.1mA
Power dissipation: 0.3W
Kind of package: reel; tape
Application: automotive industry
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1N4743ATR 1N4743ATR ONSEMI pVersion=0046&contRep=ZT&docId=005056AB281E1EDFB4B5AFD73EB740D8&compId=1N47xxA.PDF?ci_sign=d27c4835f1cef0a530570e114d214d5552b2fa0d Category: THT Zener diodes
Description: Diode: Zener; 1W; 13V; reel,tape; DO41; single diode; 5uA; 1N47xxA
Type of diode: Zener
Power dissipation: 1W
Zener voltage: 13V
Kind of package: reel; tape
Case: DO41
Mounting: THT
Tolerance: ±5%
Semiconductor structure: single diode
Leakage current: 5µA
Manufacturer series: 1N47xxA
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1N4743A 1N4743A ONSEMI pVersion=0046&contRep=ZT&docId=005056AB281E1EDFB4B5AFD73EB740D8&compId=1N47xxA.PDF?ci_sign=d27c4835f1cef0a530570e114d214d5552b2fa0d Category: THT Zener diodes
Description: Diode: Zener; 1W; 13V; bulk; DO41; single diode; 5uA; 1N47xxA
Type of diode: Zener
Power dissipation: 1W
Zener voltage: 13V
Kind of package: bulk
Case: DO41
Mounting: THT
Tolerance: ±5%
Semiconductor structure: single diode
Leakage current: 5µA
Manufacturer series: 1N47xxA
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FJB102TM FJB102TM ONSEMI pVersion=0046&contRep=ZT&docId=005056AB752F1EE4BA81ED4911D44469&compId=FJB102TM.pdf?ci_sign=113d37b1ecfd9a72897dc00d41f0a81a18b1c1c2 Category: NPN SMD Darlington transistors
Description: Transistor: NPN; bipolar; Darlington; 100V; 8A; 80W; D2PAK
Mounting: SMD
Type of transistor: NPN
Collector current: 8A
Power dissipation: 80W
Collector-emitter voltage: 100V
Current gain: 200...20000
Polarisation: bipolar
Case: D2PAK
Kind of transistor: Darlington
на замовлення 516 шт:
термін постачання 21-30 дні (днів)
5+89.10 грн
10+66.90 грн
21+44.87 грн
58+42.40 грн
250+40.81 грн
Мінімальне замовлення: 5
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FCH099N65S3-F155 ONSEMI fch099n65s3-d.pdf Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 650V; 19A; Idm: 75A; 227W; TO247
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 650V
Drain current: 19A
Power dissipation: 227W
Case: TO247
Gate-source voltage: ±30V
On-state resistance: 79mΩ
Mounting: THT
Kind of package: tube
Kind of channel: enhancement
Gate charge: 61nC
Pulsed drain current: 75A
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FCB099N65S3 ONSEMI fcb099n65s3-d.pdf Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 650V; 30A; Idm: 75A; 227W; D2PAK
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 650V
Drain current: 30A
Power dissipation: 227W
Case: D2PAK
Gate-source voltage: ±30V
On-state resistance: 99mΩ
Mounting: SMD
Kind of package: reel; tape
Kind of channel: enhancement
Gate charge: 61nC
Pulsed drain current: 75A
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FCB199N65S3 ONSEMI fcb199n65s3-d.pdf Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 650V; 14A; Idm: 35A; 98W; D2PAK
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 650V
Drain current: 14A
Power dissipation: 98W
Case: D2PAK
Gate-source voltage: ±30V
On-state resistance: 0.199Ω
Mounting: SMD
Kind of package: reel; tape
Kind of channel: enhancement
Gate charge: 30nC
Pulsed drain current: 35A
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FCH029N65S3-F155 ONSEMI fch029n65s3-d.pdf Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 650V; 50.8A; Idm: 200A; 463W; TO247
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 650V
Drain current: 50.8A
Power dissipation: 463W
Case: TO247
Gate-source voltage: ±30V
On-state resistance: 23.7mΩ
Mounting: THT
Kind of package: tube
Kind of channel: enhancement
Gate charge: 201nC
Pulsed drain current: 200A
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NVB099N65S3 ONSEMI nvb099n65s3-d.pdf Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 650V; 30A; Idm: 75A; 227W; D2PAK
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 650V
Drain current: 30A
Power dissipation: 227W
Case: D2PAK
Gate-source voltage: ±30V
On-state resistance: 99mΩ
Mounting: SMD
Kind of package: reel; tape
Kind of channel: enhancement
Gate charge: 61nC
Pulsed drain current: 75A
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NTHL019N65S3H ONSEMI nthl019n65s3h-d.pdf Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 650V; 73A; Idm: 328A; 625W; TO247
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 650V
Drain current: 73A
Power dissipation: 625W
Case: TO247
Gate-source voltage: ±30V
On-state resistance: 15mΩ
Mounting: THT
Kind of package: tube
Kind of channel: enhancement
Gate charge: 282nC
Pulsed drain current: 328A
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FCMT099N65S3 ONSEMI fcmt099n65s3-d.pdf Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 650V; 30A; Idm: 75A; 227W; PQFN4
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 650V
Drain current: 30A
Power dissipation: 227W
Case: PQFN4
Gate-source voltage: ±30V
On-state resistance: 99mΩ
Mounting: SMD
Kind of package: reel; tape
Kind of channel: enhancement
Gate charge: 56nC
Pulsed drain current: 75A
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FCPF099N65S3 ONSEMI fcpf099n65s3-d.pdf Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 650V; 30A; Idm: 75A; 43W; TO220FP
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 650V
Drain current: 30A
Power dissipation: 43W
Case: TO220FP
Gate-source voltage: ±30V
On-state resistance: 99mΩ
Mounting: THT
Kind of package: tube
Kind of channel: enhancement
Gate charge: 57nC
Pulsed drain current: 75A
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NTZD5110NT1G NTZD5110NT1G ONSEMI ntzd5110n-d.pdf Category: Multi channel transistors
Description: Transistor: N-MOSFET x2; unipolar; 60V; 0.225A; 0.28W; SOT563F; ESD
Type of transistor: N-MOSFET x2
Polarisation: unipolar
Drain-source voltage: 60V
Drain current: 0.225A
Power dissipation: 0.28W
Case: SOT563F
Gate-source voltage: ±20V
On-state resistance: 1.6Ω
Mounting: SMD
Kind of package: reel; tape
Kind of channel: enhancement
Version: ESD
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BYW80-200G BYW80-200G ONSEMI pVersion=0046&contRep=ZT&docId=005056AB752F1EE7868868017BA6A745&compId=BYW80-200G.PDF?ci_sign=56b60dde4211bdb98c10afa8426444b809616a8d description Category: THT universal diodes
Description: Diode: switching; THT; 200V; 8A; tube; Ifsm: 100A; TO220AC; 35ns
Type of diode: switching
Mounting: THT
Max. off-state voltage: 200V
Load current: 8A
Semiconductor structure: single diode
Features of semiconductor devices: ultrafast switching
Kind of package: tube
Max. forward impulse current: 100A
Case: TO220AC
Max. load current: 16A
Heatsink thickness: 1.15...1.39mm
Reverse recovery time: 35ns
на замовлення 1360 шт:
термін постачання 21-30 дні (днів)
8+57.40 грн
10+45.34 грн
Мінімальне замовлення: 8
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NCP1336BDR2G NCP1336BDR2G ONSEMI ncp1336-d.pdf Category: Voltage regulators - DC/DC circuits
Description: IC: PMIC; AC/DC switcher,PWM controller; SO14; 9÷28VDC
Mounting: SMD
Case: SO14
Type of integrated circuit: PMIC
Operating temperature: -40...125°C
Output current: -500...800mA
Number of channels: 1
Operating voltage: 9...28V DC
Kind of integrated circuit: AC/DC switcher; PWM controller
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NCP1338DR2G ONSEMI ncp1338-d.pdf ONSM-S-A0011139603-1.pdf?t.download=true&u=ovmfp3 Category: Voltage regulators - DC/DC circuits
Description: IC: PMIC; AC/DC switcher,PWM controller; SO7; 9÷18.6VDC
Mounting: SMD
Case: SO7
Type of integrated circuit: PMIC
Operating temperature: 0...125°C
Output current: 0.5A
Number of channels: 1
Operating voltage: 9...18.6V DC
Frequency: 130kHz
Kind of integrated circuit: AC/DC switcher; PWM controller
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MJE15029G MJE15029G ONSEMI pVersion=0046&contRep=ZT&docId=005056AB752F1EE58DD0C8D41761C469&compId=MJE15031G.PDF?ci_sign=d3f27eb0c49b3f5041cfa666240f905eace1dedf Category: PNP THT transistors
Description: Transistor: PNP; bipolar; 120V; 8A; 50W; TO220AB
Mounting: THT
Type of transistor: PNP
Case: TO220AB
Collector current: 8A
Power dissipation: 50W
Collector-emitter voltage: 120V
Frequency: 30MHz
Polarisation: bipolar
Kind of package: tube
на замовлення 44 шт:
термін постачання 21-30 дні (днів)
3+142.39 грн
10+111.37 грн
11+90.69 грн
29+85.91 грн
Мінімальне замовлення: 3
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LMV931SN3T1G ONSEMI lmv931-d.pdf Category: SMD operational amplifiers
Description: IC: operational amplifier; 1.5MHz; TSOP5; 1.8÷5VDC; reel,tape
Type of integrated circuit: operational amplifier
Bandwidth: 1.5MHz
Mounting: SMT
Case: TSOP5
Slew rate: 480mV/μs
Operating temperature: -40...125°C
Input offset voltage: 6mV
Voltage supply range: 1.8...5V DC
Kind of package: reel; tape
Input bias current: 1nA
Input offset current: 1nA
Number of channels: single
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LMV931SQ3T2G ONSEMI lmv931-d.pdf Category: SMD operational amplifiers
Description: IC: operational amplifier; 1.5MHz; SC70-5; 1.8÷5VDC; reel,tape
Type of integrated circuit: operational amplifier
Bandwidth: 1.5MHz
Mounting: SMT
Case: SC70-5
Slew rate: 480mV/μs
Operating temperature: -40...125°C
Input offset voltage: 6mV
Voltage supply range: 1.8...5V DC
Kind of package: reel; tape
Input bias current: 1nA
Input offset current: 1nA
Number of channels: single
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NCP163ASN330T1G NCP163ASN330T1G ONSEMI ncp163-d.pdf Category: LDO fixed voltage regulators
Description: IC: voltage regulator; LDO,linear,fixed; 3.3V; 250mA; SOT23-5; SMD
Type of integrated circuit: voltage regulator
Kind of voltage regulator: fixed; LDO; linear
Voltage drop: 0.175V
Output voltage: 3.3V
Output current: 0.25A
Case: SOT23-5
Mounting: SMD
Manufacturer series: NCP163
Operating temperature: -40...125°C
Tolerance: ±2%
Number of channels: 1
Input voltage: 2.2...5.5V
на замовлення 1349 шт:
термін постачання 21-30 дні (днів)
15+29.98 грн
18+22.91 грн
20+20.36 грн
25+17.50 грн
66+14.16 грн
182+13.36 грн
Мінімальне замовлення: 15
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NB3M8302CDR2G NB3M8302CDR2G ONSEMI nb3m8302c-d.pdf Category: Level translators
Description: IC: digital; fanout buffer; Ch: 1; CMOS,TTL; 4.6VDC; SMD; SO8; 13mA
Type of integrated circuit: digital
Mounting: SMD
Case: SO8
Quiescent current: 13mA
Operating temperature: -40...85°C
Kind of package: reel; tape
Number of channels: 1
Supply voltage: 4.6V DC
Technology: CMOS; TTL
Kind of integrated circuit: fanout buffer
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NB3M8302CDG ONSEMI nb3m8302c-d.pdf Category: Level translators
Description: IC: digital
Type of integrated circuit: digital
на замовлення 490 шт:
термін постачання 21-30 дні (днів)
98+160.20 грн
196+133.64 грн
Мінімальне замовлення: 98
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SZMMSZ4680T1G SZMMSZ4680T1G ONSEMI pVersion=0046&contRep=ZT&docId=005056AB281E1EDFB4CFEB7388A7C0D8&compId=MMSZ4xxxT1G.PDF?ci_sign=a85907a4b31579eb401f684e4c002657dc7dfe7a Category: SMD Zener diodes
Description: Diode: Zener; 0.5W; 2.2V; SMD; reel,tape; SOD123; single diode; 4uA
Type of diode: Zener
Power dissipation: 0.5W
Zener voltage: 2.2V
Mounting: SMD
Tolerance: ±5%
Kind of package: reel; tape
Case: SOD123
Semiconductor structure: single diode
Leakage current: 4µA
Manufacturer series: MMSZ4xxT1G
Application: automotive industry
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NTLJF3117PT1G ONSEMI ntljf3117p-d.pdf Category: SMD P channel transistors
Description: Transistor: P-MOSFET + Schottky; unipolar; -20V; -4.1A; Idm: -20A
Type of transistor: P-MOSFET + Schottky
Polarisation: unipolar
Drain-source voltage: -20V
Drain current: -4.1A
Pulsed drain current: -20A
Power dissipation: 2.3W
Case: WDFN6
Gate-source voltage: ±8V
On-state resistance: 0.1Ω
Mounting: SMD
Gate charge: 5.5nC
Kind of package: reel; tape
Kind of channel: enhancement
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NTMT064N65S3H ONSEMI ntmt064n65s3h-d.pdf Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 650V; 40A; Idm: 112A; 260W; TDFN4
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 650V
Drain current: 40A
Pulsed drain current: 112A
Power dissipation: 260W
Case: TDFN4
Gate-source voltage: ±30V
On-state resistance: 64mΩ
Mounting: SMD
Gate charge: 82nC
Kind of package: reel; tape
Kind of channel: enhancement
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MUN5211T1G MUN5211T1G ONSEMI pVersion=0046&contRep=ZT&docId=005056AB281E1EDC91C2091FB92040CE&compId=MUN2211.PDF?ci_sign=414c3c3e3685fa2f362efb0e2f3ec37af6d380b4 Category: NPN SMD transistors
Description: Transistor: NPN; bipolar; BRT; 50V; 0.1A; 0.31W; SC70,SOT323
Polarisation: bipolar
Kind of transistor: BRT
Type of transistor: NPN
Kind of package: reel; tape
Case: SC70; SOT323
Mounting: SMD
Collector current: 0.1A
Power dissipation: 0.31W
Collector-emitter voltage: 50V
Current gain: 60
Base resistor: 10kΩ
Base-emitter resistor: 10kΩ
на замовлення 544 шт:
термін постачання 21-30 дні (днів)
42+10.28 грн
65+6.20 грн
105+3.80 грн
500+2.77 грн
Мінімальне замовлення: 42
В кошику  од. на суму  грн.
SMUN5211T1G SMUN5211T1G ONSEMI dtc114e-d.pdf Category: NPN SMD transistors
Description: Transistor: NPN; bipolar; BRT; 50V; 0.1A; 0.31W; SC70,SOT323
Polarisation: bipolar
Kind of transistor: BRT
Type of transistor: NPN
Kind of package: reel; tape
Case: SC70; SOT323
Mounting: SMD
Collector current: 0.1A
Power dissipation: 0.31W
Collector-emitter voltage: 50V
Base resistor: 10kΩ
Application: automotive industry
Base-emitter resistor: 10kΩ
на замовлення 38 шт:
термін постачання 21-30 дні (днів)
38+10.34 грн
Мінімальне замовлення: 38
В кошику  од. на суму  грн.
MUN5211DW1T1G MUN5211DW1T1G ONSEMI pVersion=0046&contRep=ZT&docId=005056AB281E1EDC91C1455BDF25C0CE&compId=MUN5211DW1.PDF?ci_sign=3cf432a5e8d799c49791300d0639c0541b0793dd Category: NPN SMD transistors
Description: Transistor: NPN x2; bipolar; BRT; 50V; 0.1A; 0.187W; R1: 10kΩ
Polarisation: bipolar
Kind of transistor: BRT
Type of transistor: NPN x2
Kind of package: reel; tape
Case: SC70-6; SC88; SOT363
Mounting: SMD
Collector current: 0.1A
Power dissipation: 0.187W
Current gain: 60
Collector-emitter voltage: 50V
Base resistor: 10kΩ
Base-emitter resistor: 10kΩ
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SMUN5211DW1T1G SMUN5211DW1T1G ONSEMI dtc114ed-d.pdf Category: NPN SMD transistors
Description: Transistor: NPN x2; bipolar; BRT; 50V; 0.1A; 0.25W; R1: 10kΩ; R2: 10kΩ
Polarisation: bipolar
Kind of transistor: BRT
Type of transistor: NPN x2
Kind of package: reel; tape
Case: SC70-6; SC88; SOT363
Mounting: SMD
Collector current: 0.1A
Power dissipation: 0.25W
Collector-emitter voltage: 50V
Base resistor: 10kΩ
Application: automotive industry
Base-emitter resistor: 10kΩ
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SMUN5211T3G SMUN5211T3G ONSEMI dtc114e-d.pdf Category: NPN SMD transistors
Description: Transistor: NPN; bipolar; BRT; 50V; 0.1A; 0.31W; SC70,SOT323
Polarisation: bipolar
Kind of transistor: BRT
Type of transistor: NPN
Kind of package: reel; tape
Case: SC70; SOT323
Mounting: SMD
Collector current: 0.1A
Power dissipation: 0.31W
Collector-emitter voltage: 50V
Base resistor: 10kΩ
Application: automotive industry
Base-emitter resistor: 10kΩ
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NSVMUN5211DW1T2G ONSEMI dtc114ed-d.pdf Category: NPN SMD transistors
Description: Transistor: NPN x2; bipolar; BRT; 50V; 100mA; 385mW; R1: 10kΩ
Polarisation: bipolar
Kind of transistor: BRT
Type of transistor: NPN x2
Kind of package: reel; tape
Case: SC70-6; SC88; SOT363
Mounting: SMD
Collector current: 0.1A
Power dissipation: 0.385W
Current gain: 35...60
Collector-emitter voltage: 50V
Quantity in set/package: 3000pcs.
Base resistor: 10kΩ
Application: automotive industry
Base-emitter resistor: 10kΩ
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MELSMUN5211T3G ONSEMI Category: Unclassified
Description: MELSMUN5211T3G
на замовлення 20000 шт:
термін постачання 21-30 дні (днів)
10000+2.66 грн
Мінімальне замовлення: 10000
В кошику  од. на суму  грн.
VEOSMUN5211T1G ONSEMI Category: Unclassified
Description: VEOSMUN5211T1G
на замовлення 81000 шт:
термін постачання 21-30 дні (днів)
6000+1.17 грн
Мінімальне замовлення: 6000
В кошику  од. на суму  грн.
MC74LVX573DTG MC74LVX573DTG ONSEMI pVersion=0046&contRep=ZT&docId=005056AB281E1EDDA4E632AB036680D3&compId=MC74LVX573-D.pdf?ci_sign=387d5e6055f2989f2b0e3d704ad1a8ef93aa8da2 Category: Latches
Description: IC: digital; 3-state,octal,D latch; Ch: 8; CMOS; 2÷3.6VDC; SMD; LVX
Type of integrated circuit: digital
Kind of integrated circuit: 3-state; D latch; octal
Number of channels: 8
Technology: CMOS
Supply voltage: 2...3.6V DC
Mounting: SMD
Case: TSSOP20
Manufacturer series: LVX
Operating temperature: -40...85°C
Kind of output: 3-state
Kind of package: tube
Family: LVX
Integrated circuit features: tolerates a voltage of 5V on the inputs
на замовлення 158 шт:
термін постачання 21-30 дні (днів)
5+95.95 грн
10+53.22 грн
25+37.79 грн
69+35.72 грн
150+34.37 грн
Мінімальне замовлення: 5
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MC74LVX573DTR2G ONSEMI pVersion=0046&contRep=ZT&docId=005056AB281E1EDDA4E632AB0367C0D3&compId=MC74LVX573-D.pdf?ci_sign=e276c4a6d63eaf6621406c4b95ad6ef8f041d6c1 Category: Latches
Description: IC: digital; 3-state,octal,D latch; Ch: 8; CMOS; 2÷3.6VDC; SMD; LVX
Type of integrated circuit: digital
Kind of integrated circuit: 3-state; D latch; octal
Number of channels: 8
Technology: CMOS
Supply voltage: 2...3.6V DC
Mounting: SMD
Case: TSSOP20
Manufacturer series: LVX
Operating temperature: -40...85°C
Kind of output: 3-state
Kind of package: reel; tape
Family: LVX
Integrated circuit features: tolerates a voltage of 5V on the inputs
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NCP431BISNT1G NCP431BISNT1G ONSEMI pVersion=0046&contRep=ZT&docId=005056AB281E1EDC94BA8FC89B9100CE&compId=NCP431_432.PDF?ci_sign=92886f9d83cf1b4f0ad4830a5b78f35ef74c42e0 Category: Reference voltage sources - circuits
Description: IC: voltage reference source; 2.5V; ±0.5%; SOT23; reel,tape; 100mA
Type of integrated circuit: voltage reference source
Reference voltage: 2.5V
Tolerance: ±0.5%
Mounting: SMD
Case: SOT23
Operating temperature: -40...85°C
Operating voltage: 2.5...36V
Kind of package: reel; tape
Maximum output current: 0.1A
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NCP432BISNT1G NCP432BISNT1G ONSEMI ncp431-d.pdf Category: Reference voltage sources - circuits
Description: IC: voltage reference source; 2.5V; ±0.5%; SOT23; reel,tape; 100mA
Type of integrated circuit: voltage reference source
Reference voltage: 2.5V
Tolerance: ±0.5%
Mounting: SMD
Case: SOT23
Operating temperature: -40...85°C
Operating voltage: 2.5...36V
Kind of package: reel; tape
Maximum output current: 0.1A
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MJ11033G MJ11033G ONSEMI pVersion=0046&contRep=ZT&docId=005056AB752F1EE58DD07A9B690C2469&compId=MJ11032G.PDF?ci_sign=7f6b0e43d6d7b9d29a2a21851b22e79b9d1bb499 description Category: PNP THT Darlington transistors
Description: Transistor: PNP; bipolar; Darlington; 120V; 50A; 300W; TO3
Kind of package: in-tray
Polarisation: bipolar
Kind of transistor: Darlington
Case: TO3
Mounting: THT
Type of transistor: PNP
Power dissipation: 300W
Collector current: 50A
Collector-emitter voltage: 120V
на замовлення 89 шт:
термін постачання 21-30 дні (днів)
1+793.29 грн
2+716.74 грн
4+677.76 грн
10+650.71 грн
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1SMB5940BT3G ONSEMI pVersion=0046&contRep=ZT&docId=005056AB281E1EDFB4B7A954D517C0D8&compId=1SMB59xxBT3G.PDF?ci_sign=00940bc774a386c4b9a2e8d5fc8fd6a9c14db188 Category: SMD Zener diodes
Description: Diode: Zener; 3W; 43V; SMD; reel,tape; SMB; single diode
Mounting: SMD
Tolerance: ±5%
Kind of package: reel; tape
Type of diode: Zener
Semiconductor structure: single diode
Power dissipation: 3W
Zener voltage: 43V
Manufacturer series: 1SMB59xxBT3G
Case: SMB
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SZ1SMB5940BT3G ONSEMI pVersion=0046&contRep=ZT&docId=005056AB281E1EDFB4B7A954D517C0D8&compId=1SMB59xxBT3G.PDF?ci_sign=00940bc774a386c4b9a2e8d5fc8fd6a9c14db188 Category: SMD Zener diodes
Description: Diode: Zener; 3W; 43V; SMD; reel,tape; SMB; single diode
Mounting: SMD
Tolerance: ±5%
Kind of package: reel; tape
Type of diode: Zener
Semiconductor structure: single diode
Power dissipation: 3W
Zener voltage: 43V
Manufacturer series: 1SMB59xxBT3G
Application: automotive industry
Case: SMB
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NCP1397ADR2G NCP1397ADR2G ONSEMI ncp1397-d.pdf Category: Voltage regulators - PWM circuits
Description: IC: PMIC; resonant mode controller; -1A÷500mA; 500kHz; Ch: 1; SO16
Type of integrated circuit: PMIC
Kind of integrated circuit: resonant mode controller
Output current: -1...0.5A
Frequency: 0.5MHz
Number of channels: 1
Case: SO16
Mounting: SMD
Topology: push-pull; resonant LLC
Kind of package: reel; tape
Operating voltage: 9...20V DC
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MUN5235T1G MUN5235T1G ONSEMI pVersion=0046&contRep=ZT&docId=005056AB752F1EE88FAAC1C7779EB3D2&compId=mun2235.pdf?ci_sign=acd83ed011384d5d85e267c949aaa1af22e5d958 Category: NPN SMD transistors
Description: Transistor: NPN; bipolar; BRT; 50V; 0.1A; 0.31W; SC70,SOT323
Polarisation: bipolar
Kind of transistor: BRT
Type of transistor: NPN
Kind of package: reel; tape
Case: SC70; SOT323
Mounting: SMD
Collector current: 0.1A
Power dissipation: 0.31W
Collector-emitter voltage: 50V
Current gain: 140
Base resistor: 2.2kΩ
Base-emitter resistor: 47kΩ
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74AC04MTCX 74AC04MTCX ONSEMI 74ACT04-D.PDF Category: Gates, inverters
Description: IC: digital; NOT; Ch: 6; IN: 1; SMD; TSSOP14; 2÷6VDC; -40÷85°C; AC
Type of integrated circuit: digital
Kind of gate: NOT
Number of channels: hex; 6
Mounting: SMD
Case: TSSOP14
Supply voltage: 2...6V DC
Operating temperature: -40...85°C
Kind of package: reel; tape
Family: AC
Number of inputs: 1
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74AC04SCX ONSEMI pVersion=0046&contRep=ZT&docId=005056AB281E1EDDA4E62691A72440D3&compId=74ACT04-D.pdf?ci_sign=b17e55d78a46ae3e5863f355d403b04d7efb3c83 Category: Gates, inverters
Description: IC: digital; hex,inverter; NOT; Ch: 6; IN: 1; SMD; SOIC14; AC; 2÷6VDC
Type of integrated circuit: digital
Kind of gate: NOT
Number of channels: 6
Mounting: SMD
Case: SOIC14
Supply voltage: 2...6V DC
Operating temperature: -40...85°C
Kind of package: reel; tape
Family: AC
Manufacturer series: AC
Number of inputs: 1
Kind of integrated circuit: hex; inverter
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NL17SZ17DFT2G pVersion=0046&contRep=ZT&docId=005056AB90B41EDAAAE0491F7A9980C7&compId=NL17SZ17DFT2G.pdf?ci_sign=f856f1440f37861916bb71251ff9f19a7ddfc4af
NL17SZ17DFT2G
Виробник: ONSEMI
Category: Buffers, transceivers, drivers
Description: IC: digital; buffer,non-inverting; Ch: 1; SMD; SC88A; -55÷125°C
Type of integrated circuit: digital
Mounting: SMD
Kind of input: with Schmitt trigger
Operating temperature: -55...125°C
Number of channels: 1
Kind of integrated circuit: buffer; non-inverting
Supply voltage: 1.65...5.5V DC
Case: SC88A
на замовлення 1941 шт:
термін постачання 21-30 дні (днів)
Кількість Ціна
42+10.28 грн
70+5.73 грн
76+5.25 грн
85+4.71 грн
100+4.09 грн
250+3.75 грн
402+2.32 грн
1104+2.20 грн
Мінімальне замовлення: 42
В кошику  од. на суму  грн.
NL17SZ17DFT2G-Q nl17sz17-d.pdf
Виробник: ONSEMI
Category: Buffers, transceivers, drivers
Description: IC: digital
Type of integrated circuit: digital
на замовлення 6000 шт:
термін постачання 21-30 дні (днів)
Кількість Ціна
3000+2.41 грн
Мінімальне замовлення: 3000
В кошику  од. на суму  грн.
NTMFS008N12MCT1G ntmfs008n12mc-d.pdf
Виробник: ONSEMI
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 120V; 79A; Idm: 352A; 40W; SO8
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 120V
Drain current: 79A
Pulsed drain current: 352A
Power dissipation: 40W
Case: SO8
Gate-source voltage: ±20V
On-state resistance: 8mΩ
Mounting: SMD
Gate charge: 33nC
Kind of package: reel; tape
Kind of channel: enhancement
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MRA4005T3G pVersion=0046&contRep=ZT&docId=005056AB752F1ED6A7EC99F014E1DE27&compId=MRA4006T3G-DTE.PDF?ci_sign=07e05b91c4facf205775ca0b12034b0218906c4f
MRA4005T3G
Виробник: ONSEMI
Category: SMD universal diodes
Description: Diode: rectifying; SMD; 600V; 1A; SMA; Ufmax: 1.18V; reel,tape
Type of diode: rectifying
Mounting: SMD
Max. off-state voltage: 0.6kV
Load current: 1A
Semiconductor structure: single diode
Case: SMA
Max. forward voltage: 1.18V
Max. load current: 30A
Kind of package: reel; tape
на замовлення 3777 шт:
термін постачання 21-30 дні (днів)
Кількість Ціна
36+11.99 грн
49+8.27 грн
64+6.25 грн
100+5.58 грн
218+4.29 грн
598+4.06 грн
1000+3.99 грн
2000+3.90 грн
Мінімальне замовлення: 36
В кошику  од. на суму  грн.
MBR0520L pVersion=0046&contRep=ZT&docId=E20E078571710BF1A303005056AB0C4F&compId=MBR0520L.pdf?ci_sign=e7310b509a77c1d9d841d4aa129db63a5927b2f8
MBR0520L
Виробник: ONSEMI
Category: SMD Schottky diodes
Description: Diode: Schottky switching; SOD123; SMD; 20V; 0.5A; reel,tape
Type of diode: Schottky switching
Case: SOD123
Mounting: SMD
Max. off-state voltage: 20V
Load current: 0.5A
Semiconductor structure: single diode
Max. forward impulse current: 5.5A
Kind of package: reel; tape
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MC74ACT273DTR2G pVersion=0046&contRep=ZT&docId=005056AB281E1EDDA4E62AA252D1A0D3&compId=MC74AC273-D.pdf?ci_sign=3ecebe29d8d884f91b1ca82b9582418f72a9f82c
Виробник: ONSEMI
Category: Flip-Flops
Description: IC: digital; octal,D flip-flop; Ch: 8; TTL; ACT; SMD; TSSOP20; ACT
Type of integrated circuit: digital
Kind of integrated circuit: D flip-flop; octal
Number of channels: 8
Technology: TTL
Manufacturer series: ACT
Mounting: SMD
Case: TSSOP20
Operating temperature: -40...85°C
Supply voltage: 4.5...5.5V DC
Kind of package: reel; tape
Family: ACT
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MC74ACT273DWR2G pVersion=0046&contRep=ZT&docId=005056AB281E1EDDA4E62ADFEF56C0D3&compId=MC74AC273-D.pdf?ci_sign=9cd9cae301874d8c90a6fd0448e57e7b447bb848
Виробник: ONSEMI
Category: Flip-Flops
Description: IC: digital; octal,D flip-flop; Ch: 8; TTL; ACT; SMD; SO20WB; ACT
Type of integrated circuit: digital
Kind of integrated circuit: D flip-flop; octal
Number of channels: 8
Technology: TTL
Manufacturer series: ACT
Mounting: SMD
Case: SO20WB
Operating temperature: -40...85°C
Supply voltage: 4.5...5.5V DC
Kind of package: reel; tape
Family: ACT
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NRVHP160SFT3G nhp160sf-d.pdf
Виробник: ONSEMI
Category: SMD universal diodes
Description: Diode: rectifying; SMD; 600V; 1A; SOD123F; reel,tape
Type of diode: rectifying
Mounting: SMD
Max. off-state voltage: 0.6kV
Load current: 1A
Semiconductor structure: single diode
Case: SOD123F
Kind of package: reel; tape
Application: automotive industry
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NCS20084DR2G ncs2008-d.pdf
Виробник: ONSEMI
Category: SMD operational amplifiers
Description: IC: operational amplifier; 1.2MHz; SO14; 1.8÷5.5VDC; reel,tape
Mounting: SMT
Type of integrated circuit: operational amplifier
Number of channels: quad
Kind of package: reel; tape
Case: SO14
Operating temperature: -40...125°C
Input bias current: 1pA
Input offset current: 1pA
Input offset voltage: 3.5mV
Slew rate: 0.4V/μs
Voltage supply range: 1.8...5.5V DC
Bandwidth: 1.2MHz
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NCS20084DTBR2G ncs2008-d.pdf
Виробник: ONSEMI
Category: SMD operational amplifiers
Description: IC: operational amplifier; 1.2MHz; TSSOP14; 1.8÷5.5VDC; reel,tape
Mounting: SMT
Type of integrated circuit: operational amplifier
Number of channels: quad
Kind of package: reel; tape
Case: TSSOP14
Operating temperature: -40...125°C
Input bias current: 1pA
Input offset current: 1pA
Input offset voltage: 3.5mV
Slew rate: 0.4V/μs
Voltage supply range: 1.8...5.5V DC
Bandwidth: 1.2MHz
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NCV20084DR2G ncs2008-d.pdf
Виробник: ONSEMI
Category: SMD operational amplifiers
Description: IC: operational amplifier; 1.2MHz; SO14; 1.8÷5.5VDC; reel,tape
Mounting: SMT
Type of integrated circuit: operational amplifier
Number of channels: quad
Kind of package: reel; tape
Case: SO14
Operating temperature: -40...125°C
Input bias current: 1pA
Input offset current: 1pA
Input offset voltage: 3.5mV
Slew rate: 0.4V/μs
Voltage supply range: 1.8...5.5V DC
Bandwidth: 1.2MHz
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NCV20084DTBR2G ncs2008-d.pdf
Виробник: ONSEMI
Category: SMD operational amplifiers
Description: IC: operational amplifier; 1.2MHz; TSSOP14; 1.8÷5.5VDC; reel,tape
Mounting: SMT
Type of integrated circuit: operational amplifier
Number of channels: quad
Kind of package: reel; tape
Case: TSSOP14
Operating temperature: -40...125°C
Input bias current: 1pA
Input offset current: 1pA
Input offset voltage: 3.5mV
Slew rate: 0.4V/μs
Voltage supply range: 1.8...5.5V DC
Bandwidth: 1.2MHz
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NTMFSC011N08M7 ntmfsc011n08m7-d.pdf
Виробник: ONSEMI
Category: Multi channel transistors
Description: Transistor: N-MOSFET x2; unipolar; 80V; 61A; Idm: 180A; 31.2W; DFN8
Type of transistor: N-MOSFET x2
Polarisation: unipolar
Drain-source voltage: 80V
Drain current: 61A
Pulsed drain current: 180A
Power dissipation: 31.2W
Case: DFN8
Gate-source voltage: ±20V
On-state resistance: 10mΩ
Mounting: SMD
Gate charge: 29.3nC
Kind of package: reel; tape
Kind of channel: enhancement
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MMSZ4704T1G pVersion=0046&contRep=ZT&docId=005056AB281E1EDFB4CFEB7388A7C0D8&compId=MMSZ4xxxT1G.PDF?ci_sign=a85907a4b31579eb401f684e4c002657dc7dfe7a
MMSZ4704T1G
Виробник: ONSEMI
Category: SMD Zener diodes
Description: Diode: Zener; 0.5W; 17V; SMD; reel,tape; SOD123; single diode
Type of diode: Zener
Power dissipation: 0.5W
Zener voltage: 17V
Mounting: SMD
Tolerance: ±5%
Kind of package: reel; tape
Case: SOD123
Semiconductor structure: single diode
Leakage current: 50nA
Manufacturer series: MMSZ4xxT1G
на замовлення 3095 шт:
термін постачання 21-30 дні (днів)
Кількість Ціна
72+6.00 грн
97+4.14 грн
121+3.31 грн
174+2.30 грн
546+1.71 грн
1000+1.56 грн
Мінімальне замовлення: 72
В кошику  од. на суму  грн.
SZMMSZ4704T1G pVersion=0046&contRep=ZT&docId=005056AB281E1EDFB4CFEB7388A7C0D8&compId=MMSZ4xxxT1G.PDF?ci_sign=a85907a4b31579eb401f684e4c002657dc7dfe7a
Виробник: ONSEMI
Category: SMD Zener diodes
Description: Diode: Zener; 0.5W; 17V; SMD; reel,tape; SOD123; single diode
Type of diode: Zener
Power dissipation: 0.5W
Zener voltage: 17V
Mounting: SMD
Tolerance: ±5%
Kind of package: reel; tape
Case: SOD123
Semiconductor structure: single diode
Leakage current: 50nA
Manufacturer series: MMSZ4xxT1G
Application: automotive industry
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BAV70LT3G bav70lt1-d.pdf
BAV70LT3G
Виробник: ONSEMI
Category: SMD universal diodes
Description: Diode: switching; SMD; 100V; 0.2A; 6ns; SOT23; Ufmax: 1.25V; Ifsm: 31A
Type of diode: switching
Mounting: SMD
Max. off-state voltage: 100V
Load current: 0.2A
Reverse recovery time: 6ns
Semiconductor structure: common cathode; double
Capacitance: 1.5pF
Case: SOT23
Max. forward voltage: 1.25V
Max. forward impulse current: 31A
Leakage current: 0.1mA
Power dissipation: 0.3W
Kind of package: reel; tape
Max. load current: 0.5A
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SBAV70LT3G bav70lt1-d.pdf
SBAV70LT3G
Виробник: ONSEMI
Category: SMD universal diodes
Description: Diode: switching; SMD; 100V; 0.2A; 6ns; SOT23; Ufmax: 1.25V; Ifsm: 31A
Type of diode: switching
Mounting: SMD
Max. off-state voltage: 100V
Load current: 0.2A
Reverse recovery time: 6ns
Semiconductor structure: common cathode; double
Capacitance: 1.5pF
Case: SOT23
Max. forward voltage: 1.25V
Max. forward impulse current: 31A
Leakage current: 0.1mA
Power dissipation: 0.3W
Kind of package: reel; tape
Application: automotive industry
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1N4743ATR pVersion=0046&contRep=ZT&docId=005056AB281E1EDFB4B5AFD73EB740D8&compId=1N47xxA.PDF?ci_sign=d27c4835f1cef0a530570e114d214d5552b2fa0d
1N4743ATR
Виробник: ONSEMI
Category: THT Zener diodes
Description: Diode: Zener; 1W; 13V; reel,tape; DO41; single diode; 5uA; 1N47xxA
Type of diode: Zener
Power dissipation: 1W
Zener voltage: 13V
Kind of package: reel; tape
Case: DO41
Mounting: THT
Tolerance: ±5%
Semiconductor structure: single diode
Leakage current: 5µA
Manufacturer series: 1N47xxA
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1N4743A pVersion=0046&contRep=ZT&docId=005056AB281E1EDFB4B5AFD73EB740D8&compId=1N47xxA.PDF?ci_sign=d27c4835f1cef0a530570e114d214d5552b2fa0d
1N4743A
Виробник: ONSEMI
Category: THT Zener diodes
Description: Diode: Zener; 1W; 13V; bulk; DO41; single diode; 5uA; 1N47xxA
Type of diode: Zener
Power dissipation: 1W
Zener voltage: 13V
Kind of package: bulk
Case: DO41
Mounting: THT
Tolerance: ±5%
Semiconductor structure: single diode
Leakage current: 5µA
Manufacturer series: 1N47xxA
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FJB102TM pVersion=0046&contRep=ZT&docId=005056AB752F1EE4BA81ED4911D44469&compId=FJB102TM.pdf?ci_sign=113d37b1ecfd9a72897dc00d41f0a81a18b1c1c2
FJB102TM
Виробник: ONSEMI
Category: NPN SMD Darlington transistors
Description: Transistor: NPN; bipolar; Darlington; 100V; 8A; 80W; D2PAK
Mounting: SMD
Type of transistor: NPN
Collector current: 8A
Power dissipation: 80W
Collector-emitter voltage: 100V
Current gain: 200...20000
Polarisation: bipolar
Case: D2PAK
Kind of transistor: Darlington
на замовлення 516 шт:
термін постачання 21-30 дні (днів)
Кількість Ціна
5+89.10 грн
10+66.90 грн
21+44.87 грн
58+42.40 грн
250+40.81 грн
Мінімальне замовлення: 5
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FCH099N65S3-F155 fch099n65s3-d.pdf
Виробник: ONSEMI
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 650V; 19A; Idm: 75A; 227W; TO247
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 650V
Drain current: 19A
Power dissipation: 227W
Case: TO247
Gate-source voltage: ±30V
On-state resistance: 79mΩ
Mounting: THT
Kind of package: tube
Kind of channel: enhancement
Gate charge: 61nC
Pulsed drain current: 75A
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FCB099N65S3 fcb099n65s3-d.pdf
Виробник: ONSEMI
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 650V; 30A; Idm: 75A; 227W; D2PAK
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 650V
Drain current: 30A
Power dissipation: 227W
Case: D2PAK
Gate-source voltage: ±30V
On-state resistance: 99mΩ
Mounting: SMD
Kind of package: reel; tape
Kind of channel: enhancement
Gate charge: 61nC
Pulsed drain current: 75A
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FCB199N65S3 fcb199n65s3-d.pdf
Виробник: ONSEMI
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 650V; 14A; Idm: 35A; 98W; D2PAK
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 650V
Drain current: 14A
Power dissipation: 98W
Case: D2PAK
Gate-source voltage: ±30V
On-state resistance: 0.199Ω
Mounting: SMD
Kind of package: reel; tape
Kind of channel: enhancement
Gate charge: 30nC
Pulsed drain current: 35A
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FCH029N65S3-F155 fch029n65s3-d.pdf
Виробник: ONSEMI
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 650V; 50.8A; Idm: 200A; 463W; TO247
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 650V
Drain current: 50.8A
Power dissipation: 463W
Case: TO247
Gate-source voltage: ±30V
On-state resistance: 23.7mΩ
Mounting: THT
Kind of package: tube
Kind of channel: enhancement
Gate charge: 201nC
Pulsed drain current: 200A
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NVB099N65S3 nvb099n65s3-d.pdf
Виробник: ONSEMI
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 650V; 30A; Idm: 75A; 227W; D2PAK
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 650V
Drain current: 30A
Power dissipation: 227W
Case: D2PAK
Gate-source voltage: ±30V
On-state resistance: 99mΩ
Mounting: SMD
Kind of package: reel; tape
Kind of channel: enhancement
Gate charge: 61nC
Pulsed drain current: 75A
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NTHL019N65S3H nthl019n65s3h-d.pdf
Виробник: ONSEMI
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 650V; 73A; Idm: 328A; 625W; TO247
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 650V
Drain current: 73A
Power dissipation: 625W
Case: TO247
Gate-source voltage: ±30V
On-state resistance: 15mΩ
Mounting: THT
Kind of package: tube
Kind of channel: enhancement
Gate charge: 282nC
Pulsed drain current: 328A
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FCMT099N65S3 fcmt099n65s3-d.pdf
Виробник: ONSEMI
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 650V; 30A; Idm: 75A; 227W; PQFN4
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 650V
Drain current: 30A
Power dissipation: 227W
Case: PQFN4
Gate-source voltage: ±30V
On-state resistance: 99mΩ
Mounting: SMD
Kind of package: reel; tape
Kind of channel: enhancement
Gate charge: 56nC
Pulsed drain current: 75A
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FCPF099N65S3 fcpf099n65s3-d.pdf
Виробник: ONSEMI
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 650V; 30A; Idm: 75A; 43W; TO220FP
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 650V
Drain current: 30A
Power dissipation: 43W
Case: TO220FP
Gate-source voltage: ±30V
On-state resistance: 99mΩ
Mounting: THT
Kind of package: tube
Kind of channel: enhancement
Gate charge: 57nC
Pulsed drain current: 75A
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NTZD5110NT1G ntzd5110n-d.pdf
NTZD5110NT1G
Виробник: ONSEMI
Category: Multi channel transistors
Description: Transistor: N-MOSFET x2; unipolar; 60V; 0.225A; 0.28W; SOT563F; ESD
Type of transistor: N-MOSFET x2
Polarisation: unipolar
Drain-source voltage: 60V
Drain current: 0.225A
Power dissipation: 0.28W
Case: SOT563F
Gate-source voltage: ±20V
On-state resistance: 1.6Ω
Mounting: SMD
Kind of package: reel; tape
Kind of channel: enhancement
Version: ESD
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BYW80-200G description pVersion=0046&contRep=ZT&docId=005056AB752F1EE7868868017BA6A745&compId=BYW80-200G.PDF?ci_sign=56b60dde4211bdb98c10afa8426444b809616a8d
BYW80-200G
Виробник: ONSEMI
Category: THT universal diodes
Description: Diode: switching; THT; 200V; 8A; tube; Ifsm: 100A; TO220AC; 35ns
Type of diode: switching
Mounting: THT
Max. off-state voltage: 200V
Load current: 8A
Semiconductor structure: single diode
Features of semiconductor devices: ultrafast switching
Kind of package: tube
Max. forward impulse current: 100A
Case: TO220AC
Max. load current: 16A
Heatsink thickness: 1.15...1.39mm
Reverse recovery time: 35ns
на замовлення 1360 шт:
термін постачання 21-30 дні (днів)
Кількість Ціна
8+57.40 грн
10+45.34 грн
Мінімальне замовлення: 8
В кошику  од. на суму  грн.
NCP1336BDR2G ncp1336-d.pdf
NCP1336BDR2G
Виробник: ONSEMI
Category: Voltage regulators - DC/DC circuits
Description: IC: PMIC; AC/DC switcher,PWM controller; SO14; 9÷28VDC
Mounting: SMD
Case: SO14
Type of integrated circuit: PMIC
Operating temperature: -40...125°C
Output current: -500...800mA
Number of channels: 1
Operating voltage: 9...28V DC
Kind of integrated circuit: AC/DC switcher; PWM controller
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NCP1338DR2G ncp1338-d.pdf ONSM-S-A0011139603-1.pdf?t.download=true&u=ovmfp3
Виробник: ONSEMI
Category: Voltage regulators - DC/DC circuits
Description: IC: PMIC; AC/DC switcher,PWM controller; SO7; 9÷18.6VDC
Mounting: SMD
Case: SO7
Type of integrated circuit: PMIC
Operating temperature: 0...125°C
Output current: 0.5A
Number of channels: 1
Operating voltage: 9...18.6V DC
Frequency: 130kHz
Kind of integrated circuit: AC/DC switcher; PWM controller
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MJE15029G pVersion=0046&contRep=ZT&docId=005056AB752F1EE58DD0C8D41761C469&compId=MJE15031G.PDF?ci_sign=d3f27eb0c49b3f5041cfa666240f905eace1dedf
MJE15029G
Виробник: ONSEMI
Category: PNP THT transistors
Description: Transistor: PNP; bipolar; 120V; 8A; 50W; TO220AB
Mounting: THT
Type of transistor: PNP
Case: TO220AB
Collector current: 8A
Power dissipation: 50W
Collector-emitter voltage: 120V
Frequency: 30MHz
Polarisation: bipolar
Kind of package: tube
на замовлення 44 шт:
термін постачання 21-30 дні (днів)
Кількість Ціна
3+142.39 грн
10+111.37 грн
11+90.69 грн
29+85.91 грн
Мінімальне замовлення: 3
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LMV931SN3T1G lmv931-d.pdf
Виробник: ONSEMI
Category: SMD operational amplifiers
Description: IC: operational amplifier; 1.5MHz; TSOP5; 1.8÷5VDC; reel,tape
Type of integrated circuit: operational amplifier
Bandwidth: 1.5MHz
Mounting: SMT
Case: TSOP5
Slew rate: 480mV/μs
Operating temperature: -40...125°C
Input offset voltage: 6mV
Voltage supply range: 1.8...5V DC
Kind of package: reel; tape
Input bias current: 1nA
Input offset current: 1nA
Number of channels: single
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LMV931SQ3T2G lmv931-d.pdf
Виробник: ONSEMI
Category: SMD operational amplifiers
Description: IC: operational amplifier; 1.5MHz; SC70-5; 1.8÷5VDC; reel,tape
Type of integrated circuit: operational amplifier
Bandwidth: 1.5MHz
Mounting: SMT
Case: SC70-5
Slew rate: 480mV/μs
Operating temperature: -40...125°C
Input offset voltage: 6mV
Voltage supply range: 1.8...5V DC
Kind of package: reel; tape
Input bias current: 1nA
Input offset current: 1nA
Number of channels: single
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NCP163ASN330T1G ncp163-d.pdf
NCP163ASN330T1G
Виробник: ONSEMI
Category: LDO fixed voltage regulators
Description: IC: voltage regulator; LDO,linear,fixed; 3.3V; 250mA; SOT23-5; SMD
Type of integrated circuit: voltage regulator
Kind of voltage regulator: fixed; LDO; linear
Voltage drop: 0.175V
Output voltage: 3.3V
Output current: 0.25A
Case: SOT23-5
Mounting: SMD
Manufacturer series: NCP163
Operating temperature: -40...125°C
Tolerance: ±2%
Number of channels: 1
Input voltage: 2.2...5.5V
на замовлення 1349 шт:
термін постачання 21-30 дні (днів)
Кількість Ціна
15+29.98 грн
18+22.91 грн
20+20.36 грн
25+17.50 грн
66+14.16 грн
182+13.36 грн
Мінімальне замовлення: 15
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NB3M8302CDR2G nb3m8302c-d.pdf
NB3M8302CDR2G
Виробник: ONSEMI
Category: Level translators
Description: IC: digital; fanout buffer; Ch: 1; CMOS,TTL; 4.6VDC; SMD; SO8; 13mA
Type of integrated circuit: digital
Mounting: SMD
Case: SO8
Quiescent current: 13mA
Operating temperature: -40...85°C
Kind of package: reel; tape
Number of channels: 1
Supply voltage: 4.6V DC
Technology: CMOS; TTL
Kind of integrated circuit: fanout buffer
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NB3M8302CDG nb3m8302c-d.pdf
Виробник: ONSEMI
Category: Level translators
Description: IC: digital
Type of integrated circuit: digital
на замовлення 490 шт:
термін постачання 21-30 дні (днів)
Кількість Ціна
98+160.20 грн
196+133.64 грн
Мінімальне замовлення: 98
В кошику  од. на суму  грн.
SZMMSZ4680T1G pVersion=0046&contRep=ZT&docId=005056AB281E1EDFB4CFEB7388A7C0D8&compId=MMSZ4xxxT1G.PDF?ci_sign=a85907a4b31579eb401f684e4c002657dc7dfe7a
SZMMSZ4680T1G
Виробник: ONSEMI
Category: SMD Zener diodes
Description: Diode: Zener; 0.5W; 2.2V; SMD; reel,tape; SOD123; single diode; 4uA
Type of diode: Zener
Power dissipation: 0.5W
Zener voltage: 2.2V
Mounting: SMD
Tolerance: ±5%
Kind of package: reel; tape
Case: SOD123
Semiconductor structure: single diode
Leakage current: 4µA
Manufacturer series: MMSZ4xxT1G
Application: automotive industry
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NTLJF3117PT1G ntljf3117p-d.pdf
Виробник: ONSEMI
Category: SMD P channel transistors
Description: Transistor: P-MOSFET + Schottky; unipolar; -20V; -4.1A; Idm: -20A
Type of transistor: P-MOSFET + Schottky
Polarisation: unipolar
Drain-source voltage: -20V
Drain current: -4.1A
Pulsed drain current: -20A
Power dissipation: 2.3W
Case: WDFN6
Gate-source voltage: ±8V
On-state resistance: 0.1Ω
Mounting: SMD
Gate charge: 5.5nC
Kind of package: reel; tape
Kind of channel: enhancement
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NTMT064N65S3H ntmt064n65s3h-d.pdf
Виробник: ONSEMI
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 650V; 40A; Idm: 112A; 260W; TDFN4
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 650V
Drain current: 40A
Pulsed drain current: 112A
Power dissipation: 260W
Case: TDFN4
Gate-source voltage: ±30V
On-state resistance: 64mΩ
Mounting: SMD
Gate charge: 82nC
Kind of package: reel; tape
Kind of channel: enhancement
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MUN5211T1G pVersion=0046&contRep=ZT&docId=005056AB281E1EDC91C2091FB92040CE&compId=MUN2211.PDF?ci_sign=414c3c3e3685fa2f362efb0e2f3ec37af6d380b4
MUN5211T1G
Виробник: ONSEMI
Category: NPN SMD transistors
Description: Transistor: NPN; bipolar; BRT; 50V; 0.1A; 0.31W; SC70,SOT323
Polarisation: bipolar
Kind of transistor: BRT
Type of transistor: NPN
Kind of package: reel; tape
Case: SC70; SOT323
Mounting: SMD
Collector current: 0.1A
Power dissipation: 0.31W
Collector-emitter voltage: 50V
Current gain: 60
Base resistor: 10kΩ
Base-emitter resistor: 10kΩ
на замовлення 544 шт:
термін постачання 21-30 дні (днів)
Кількість Ціна
42+10.28 грн
65+6.20 грн
105+3.80 грн
500+2.77 грн
Мінімальне замовлення: 42
В кошику  од. на суму  грн.
SMUN5211T1G dtc114e-d.pdf
SMUN5211T1G
Виробник: ONSEMI
Category: NPN SMD transistors
Description: Transistor: NPN; bipolar; BRT; 50V; 0.1A; 0.31W; SC70,SOT323
Polarisation: bipolar
Kind of transistor: BRT
Type of transistor: NPN
Kind of package: reel; tape
Case: SC70; SOT323
Mounting: SMD
Collector current: 0.1A
Power dissipation: 0.31W
Collector-emitter voltage: 50V
Base resistor: 10kΩ
Application: automotive industry
Base-emitter resistor: 10kΩ
на замовлення 38 шт:
термін постачання 21-30 дні (днів)
Кількість Ціна
38+10.34 грн
Мінімальне замовлення: 38
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MUN5211DW1T1G pVersion=0046&contRep=ZT&docId=005056AB281E1EDC91C1455BDF25C0CE&compId=MUN5211DW1.PDF?ci_sign=3cf432a5e8d799c49791300d0639c0541b0793dd
MUN5211DW1T1G
Виробник: ONSEMI
Category: NPN SMD transistors
Description: Transistor: NPN x2; bipolar; BRT; 50V; 0.1A; 0.187W; R1: 10kΩ
Polarisation: bipolar
Kind of transistor: BRT
Type of transistor: NPN x2
Kind of package: reel; tape
Case: SC70-6; SC88; SOT363
Mounting: SMD
Collector current: 0.1A
Power dissipation: 0.187W
Current gain: 60
Collector-emitter voltage: 50V
Base resistor: 10kΩ
Base-emitter resistor: 10kΩ
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SMUN5211DW1T1G dtc114ed-d.pdf
SMUN5211DW1T1G
Виробник: ONSEMI
Category: NPN SMD transistors
Description: Transistor: NPN x2; bipolar; BRT; 50V; 0.1A; 0.25W; R1: 10kΩ; R2: 10kΩ
Polarisation: bipolar
Kind of transistor: BRT
Type of transistor: NPN x2
Kind of package: reel; tape
Case: SC70-6; SC88; SOT363
Mounting: SMD
Collector current: 0.1A
Power dissipation: 0.25W
Collector-emitter voltage: 50V
Base resistor: 10kΩ
Application: automotive industry
Base-emitter resistor: 10kΩ
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SMUN5211T3G dtc114e-d.pdf
SMUN5211T3G
Виробник: ONSEMI
Category: NPN SMD transistors
Description: Transistor: NPN; bipolar; BRT; 50V; 0.1A; 0.31W; SC70,SOT323
Polarisation: bipolar
Kind of transistor: BRT
Type of transistor: NPN
Kind of package: reel; tape
Case: SC70; SOT323
Mounting: SMD
Collector current: 0.1A
Power dissipation: 0.31W
Collector-emitter voltage: 50V
Base resistor: 10kΩ
Application: automotive industry
Base-emitter resistor: 10kΩ
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NSVMUN5211DW1T2G dtc114ed-d.pdf
Виробник: ONSEMI
Category: NPN SMD transistors
Description: Transistor: NPN x2; bipolar; BRT; 50V; 100mA; 385mW; R1: 10kΩ
Polarisation: bipolar
Kind of transistor: BRT
Type of transistor: NPN x2
Kind of package: reel; tape
Case: SC70-6; SC88; SOT363
Mounting: SMD
Collector current: 0.1A
Power dissipation: 0.385W
Current gain: 35...60
Collector-emitter voltage: 50V
Quantity in set/package: 3000pcs.
Base resistor: 10kΩ
Application: automotive industry
Base-emitter resistor: 10kΩ
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MELSMUN5211T3G
Виробник: ONSEMI
Category: Unclassified
Description: MELSMUN5211T3G
на замовлення 20000 шт:
термін постачання 21-30 дні (днів)
Кількість Ціна
10000+2.66 грн
Мінімальне замовлення: 10000
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VEOSMUN5211T1G
Виробник: ONSEMI
Category: Unclassified
Description: VEOSMUN5211T1G
на замовлення 81000 шт:
термін постачання 21-30 дні (днів)
Кількість Ціна
6000+1.17 грн
Мінімальне замовлення: 6000
В кошику  од. на суму  грн.
MC74LVX573DTG pVersion=0046&contRep=ZT&docId=005056AB281E1EDDA4E632AB036680D3&compId=MC74LVX573-D.pdf?ci_sign=387d5e6055f2989f2b0e3d704ad1a8ef93aa8da2
MC74LVX573DTG
Виробник: ONSEMI
Category: Latches
Description: IC: digital; 3-state,octal,D latch; Ch: 8; CMOS; 2÷3.6VDC; SMD; LVX
Type of integrated circuit: digital
Kind of integrated circuit: 3-state; D latch; octal
Number of channels: 8
Technology: CMOS
Supply voltage: 2...3.6V DC
Mounting: SMD
Case: TSSOP20
Manufacturer series: LVX
Operating temperature: -40...85°C
Kind of output: 3-state
Kind of package: tube
Family: LVX
Integrated circuit features: tolerates a voltage of 5V on the inputs
на замовлення 158 шт:
термін постачання 21-30 дні (днів)
Кількість Ціна
5+95.95 грн
10+53.22 грн
25+37.79 грн
69+35.72 грн
150+34.37 грн
Мінімальне замовлення: 5
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MC74LVX573DTR2G pVersion=0046&contRep=ZT&docId=005056AB281E1EDDA4E632AB0367C0D3&compId=MC74LVX573-D.pdf?ci_sign=e276c4a6d63eaf6621406c4b95ad6ef8f041d6c1
Виробник: ONSEMI
Category: Latches
Description: IC: digital; 3-state,octal,D latch; Ch: 8; CMOS; 2÷3.6VDC; SMD; LVX
Type of integrated circuit: digital
Kind of integrated circuit: 3-state; D latch; octal
Number of channels: 8
Technology: CMOS
Supply voltage: 2...3.6V DC
Mounting: SMD
Case: TSSOP20
Manufacturer series: LVX
Operating temperature: -40...85°C
Kind of output: 3-state
Kind of package: reel; tape
Family: LVX
Integrated circuit features: tolerates a voltage of 5V on the inputs
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NCP431BISNT1G pVersion=0046&contRep=ZT&docId=005056AB281E1EDC94BA8FC89B9100CE&compId=NCP431_432.PDF?ci_sign=92886f9d83cf1b4f0ad4830a5b78f35ef74c42e0
NCP431BISNT1G
Виробник: ONSEMI
Category: Reference voltage sources - circuits
Description: IC: voltage reference source; 2.5V; ±0.5%; SOT23; reel,tape; 100mA
Type of integrated circuit: voltage reference source
Reference voltage: 2.5V
Tolerance: ±0.5%
Mounting: SMD
Case: SOT23
Operating temperature: -40...85°C
Operating voltage: 2.5...36V
Kind of package: reel; tape
Maximum output current: 0.1A
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NCP432BISNT1G ncp431-d.pdf
NCP432BISNT1G
Виробник: ONSEMI
Category: Reference voltage sources - circuits
Description: IC: voltage reference source; 2.5V; ±0.5%; SOT23; reel,tape; 100mA
Type of integrated circuit: voltage reference source
Reference voltage: 2.5V
Tolerance: ±0.5%
Mounting: SMD
Case: SOT23
Operating temperature: -40...85°C
Operating voltage: 2.5...36V
Kind of package: reel; tape
Maximum output current: 0.1A
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MJ11033G description pVersion=0046&contRep=ZT&docId=005056AB752F1EE58DD07A9B690C2469&compId=MJ11032G.PDF?ci_sign=7f6b0e43d6d7b9d29a2a21851b22e79b9d1bb499
MJ11033G
Виробник: ONSEMI
Category: PNP THT Darlington transistors
Description: Transistor: PNP; bipolar; Darlington; 120V; 50A; 300W; TO3
Kind of package: in-tray
Polarisation: bipolar
Kind of transistor: Darlington
Case: TO3
Mounting: THT
Type of transistor: PNP
Power dissipation: 300W
Collector current: 50A
Collector-emitter voltage: 120V
на замовлення 89 шт:
термін постачання 21-30 дні (днів)
Кількість Ціна
1+793.29 грн
2+716.74 грн
4+677.76 грн
10+650.71 грн
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1SMB5940BT3G pVersion=0046&contRep=ZT&docId=005056AB281E1EDFB4B7A954D517C0D8&compId=1SMB59xxBT3G.PDF?ci_sign=00940bc774a386c4b9a2e8d5fc8fd6a9c14db188
Виробник: ONSEMI
Category: SMD Zener diodes
Description: Diode: Zener; 3W; 43V; SMD; reel,tape; SMB; single diode
Mounting: SMD
Tolerance: ±5%
Kind of package: reel; tape
Type of diode: Zener
Semiconductor structure: single diode
Power dissipation: 3W
Zener voltage: 43V
Manufacturer series: 1SMB59xxBT3G
Case: SMB
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SZ1SMB5940BT3G pVersion=0046&contRep=ZT&docId=005056AB281E1EDFB4B7A954D517C0D8&compId=1SMB59xxBT3G.PDF?ci_sign=00940bc774a386c4b9a2e8d5fc8fd6a9c14db188
Виробник: ONSEMI
Category: SMD Zener diodes
Description: Diode: Zener; 3W; 43V; SMD; reel,tape; SMB; single diode
Mounting: SMD
Tolerance: ±5%
Kind of package: reel; tape
Type of diode: Zener
Semiconductor structure: single diode
Power dissipation: 3W
Zener voltage: 43V
Manufacturer series: 1SMB59xxBT3G
Application: automotive industry
Case: SMB
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NCP1397ADR2G ncp1397-d.pdf
NCP1397ADR2G
Виробник: ONSEMI
Category: Voltage regulators - PWM circuits
Description: IC: PMIC; resonant mode controller; -1A÷500mA; 500kHz; Ch: 1; SO16
Type of integrated circuit: PMIC
Kind of integrated circuit: resonant mode controller
Output current: -1...0.5A
Frequency: 0.5MHz
Number of channels: 1
Case: SO16
Mounting: SMD
Topology: push-pull; resonant LLC
Kind of package: reel; tape
Operating voltage: 9...20V DC
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MUN5235T1G pVersion=0046&contRep=ZT&docId=005056AB752F1EE88FAAC1C7779EB3D2&compId=mun2235.pdf?ci_sign=acd83ed011384d5d85e267c949aaa1af22e5d958
MUN5235T1G
Виробник: ONSEMI
Category: NPN SMD transistors
Description: Transistor: NPN; bipolar; BRT; 50V; 0.1A; 0.31W; SC70,SOT323
Polarisation: bipolar
Kind of transistor: BRT
Type of transistor: NPN
Kind of package: reel; tape
Case: SC70; SOT323
Mounting: SMD
Collector current: 0.1A
Power dissipation: 0.31W
Collector-emitter voltage: 50V
Current gain: 140
Base resistor: 2.2kΩ
Base-emitter resistor: 47kΩ
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74AC04MTCX 74ACT04-D.PDF
74AC04MTCX
Виробник: ONSEMI
Category: Gates, inverters
Description: IC: digital; NOT; Ch: 6; IN: 1; SMD; TSSOP14; 2÷6VDC; -40÷85°C; AC
Type of integrated circuit: digital
Kind of gate: NOT
Number of channels: hex; 6
Mounting: SMD
Case: TSSOP14
Supply voltage: 2...6V DC
Operating temperature: -40...85°C
Kind of package: reel; tape
Family: AC
Number of inputs: 1
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74AC04SCX pVersion=0046&contRep=ZT&docId=005056AB281E1EDDA4E62691A72440D3&compId=74ACT04-D.pdf?ci_sign=b17e55d78a46ae3e5863f355d403b04d7efb3c83
Виробник: ONSEMI
Category: Gates, inverters
Description: IC: digital; hex,inverter; NOT; Ch: 6; IN: 1; SMD; SOIC14; AC; 2÷6VDC
Type of integrated circuit: digital
Kind of gate: NOT
Number of channels: 6
Mounting: SMD
Case: SOIC14
Supply voltage: 2...6V DC
Operating temperature: -40...85°C
Kind of package: reel; tape
Family: AC
Manufacturer series: AC
Number of inputs: 1
Kind of integrated circuit: hex; inverter
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