| Фото | Назва | Виробник | Інформація | Доступність | Ціна без ПДВ | ||||||||||||||||||
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BSR16 | ONSEMI |
Category: PNP SMD transistorsDescription: Transistor: PNP; bipolar; 60V; 0.8A; 0.35W; SOT23,TO236AB Kind of package: reel; tape Case: SOT23; TO236AB Frequency: 300MHz Collector current: 0.8A Mounting: SMD Collector-emitter voltage: 60V Power dissipation: 0.35W Polarisation: bipolar Type of transistor: PNP |
на замовлення 3287 шт: термін постачання 14-30 дні (днів) |
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BZX84C3V6LT1G | ONSEMI |
Category: SMD Zener diodesDescription: Diode: Zener; 0.3W; 3.6V; SMD; SOT23; single diode; reel,tape Type of diode: Zener Power dissipation: 0.3W Zener voltage: 3.6V Mounting: SMD Tolerance: ±5% Case: SOT23 Semiconductor structure: single diode Kind of package: reel; tape Manufacturer series: BZX84C |
на замовлення 3065 шт: термін постачання 14-30 дні (днів) |
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1N5361BG | ONSEMI |
Category: THT Zener diodesDescription: Diode: Zener; 5W; 27V; CASE017AA; single diode; bulk; 1N53xxB Type of diode: Zener Power dissipation: 5W Zener voltage: 27V Mounting: THT Tolerance: ±5% Semiconductor structure: single diode Manufacturer series: 1N53xxB Kind of package: bulk Case: CASE017AA |
на замовлення 620 шт: термін постачання 14-30 дні (днів) |
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| 1N5361BRLG | ONSEMI |
Category: THT Zener diodesDescription: Diode: Zener; 5W; 27V; CASE017AA; single diode; reel,tape; 1N53xxB Type of diode: Zener Power dissipation: 5W Zener voltage: 27V Mounting: THT Tolerance: ±5% Semiconductor structure: single diode Manufacturer series: 1N53xxB Kind of package: reel; tape Case: CASE017AA |
товару немає в наявності |
В кошику од. на суму грн. | |||||||||||||||||||
| NVMYS016N10MCLTWG | ONSEMI |
Category: SMD N channel transistorsDescription: Transistor: N-MOSFET; unipolar; 100V; 46A; Idm: 264A; 32W; LFPAK56 Type of transistor: N-MOSFET Polarisation: unipolar Drain-source voltage: 100V Drain current: 46A Pulsed drain current: 264A Power dissipation: 32W Case: LFPAK56 Gate-source voltage: ±20V On-state resistance: 14mΩ Mounting: SMD Gate charge: 19nC Kind of package: reel; tape Kind of channel: enhancement |
товару немає в наявності |
В кошику од. на суму грн. | |||||||||||||||||||
| NVMFS016N10MCLT1G | ONSEMI |
Category: SMD N channel transistorsDescription: Transistor: N-MOSFET; unipolar; 100V; 46A; Idm: 243A; 32W; DFN5 Type of transistor: N-MOSFET Polarisation: unipolar Drain-source voltage: 100V Drain current: 46A Pulsed drain current: 243A Power dissipation: 32W Case: DFN5 Gate-source voltage: ±20V On-state resistance: 14mΩ Mounting: SMD Gate charge: 19nC Kind of package: reel; tape Kind of channel: enhancement |
товару немає в наявності |
В кошику од. на суму грн. | |||||||||||||||||||
| NVMFWS016N10MCLT1G | ONSEMI |
Category: SMD N channel transistorsDescription: Transistor: N-MOSFET; unipolar; 100V; 46A; Idm: 243A; 32W; DFN5 Kind of package: reel; tape Case: DFN5 On-state resistance: 14mΩ Mounting: SMD Pulsed drain current: 243A Power dissipation: 32W Gate charge: 19nC Polarisation: unipolar Drain current: 46A Kind of channel: enhancement Drain-source voltage: 100V Type of transistor: N-MOSFET Gate-source voltage: ±20V |
товару немає в наявності |
В кошику од. на суму грн. | |||||||||||||||||||
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MC14051BDR2G | ONSEMI |
Category: Analog multiplexers and switchesDescription: IC: analog switch; demultiplexer,multiplexer; Ch: 1; SO16; 3÷18VDC Type of integrated circuit: analog switch Kind of integrated circuit: demultiplexer; multiplexer Number of channels: 1 Technology: CMOS Mounting: SMD Case: SO16 Operating temperature: -40...85°C Supply voltage: 3...18V DC Kind of package: reel; tape Quiescent current: 600µA Kind of output: SP8T |
товару немає в наявності |
Мінімальне замовлення: 2500 шт В кошику од. на суму грн. | ||||||||||||||||||
| NIV1161MTTAG | ONSEMI |
Category: Unidirectional TVS SMD diodesDescription: Diode: TVS; 23V; WDFN6; reel,tape; automotive industry Case: WDFN6 Mounting: SMD Kind of package: reel; tape Type of diode: TVS Max. off-state voltage: 16V Breakdown voltage: 23V Application: automotive industry |
товару немає в наявності |
В кошику од. на суму грн. | |||||||||||||||||||
| NIV2161MTTAG | ONSEMI |
Category: Protection diodes - arraysDescription: Diode: TVS array; 23V; bidirectional; WDFN10; Ch: 2; reel,tape Case: WDFN10 Mounting: SMD Number of channels: 2 Semiconductor structure: bidirectional Kind of package: reel; tape Type of diode: TVS array Max. off-state voltage: 16V Breakdown voltage: 23V Application: automotive industry |
товару немає в наявності |
В кошику од. на суму грн. | |||||||||||||||||||
| NIS1161MTTAG | ONSEMI |
Category: Unidirectional TVS SMD diodesDescription: Diode: TVS; 23V; WDFN6; reel,tape Case: WDFN6 Mounting: SMD Kind of package: reel; tape Type of diode: TVS Max. off-state voltage: 16V Breakdown voltage: 23V |
товару немає в наявності |
В кошику од. на суму грн. | |||||||||||||||||||
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NCP5106BDR2G | ONSEMI |
Category: MOSFET/IGBT driversDescription: IC: driver; IGBT half-bridge,MOSFET half-bridge; SO8; -500÷250mA Type of integrated circuit: driver Topology: IGBT half-bridge; MOSFET half-bridge Kind of integrated circuit: gate driver; high-/low-side Case: SO8 Output current: -500...250mA Number of channels: 2 Supply voltage: 10...20V DC Mounting: SMD Operating temperature: -40...125°C Kind of package: reel; tape Voltage class: 600V Impulse rise time: 160ns Protection: undervoltage UVP Integrated circuit features: integrated bootstrap functionality Pulse fall time: 75ns |
товару немає в наявності |
Мінімальне замовлення: 2500 шт В кошику од. на суму грн. | ||||||||||||||||||
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FGHL40T120SWD | ONSEMI |
Category: THT IGBT transistorsDescription: Transistor: IGBT; 1.2kV; 40A; 234W; TO247-3 Type of transistor: IGBT Collector-emitter voltage: 1.2kV Collector current: 40A Power dissipation: 234W Case: TO247-3 Gate-emitter voltage: ±20V Pulsed collector current: 160A Mounting: THT Gate charge: 118nC Kind of package: tube |
на замовлення 355 шт: термін постачання 14-30 дні (днів) |
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M74HCT4852ADTR2G | ONSEMI |
Category: Decoders, multiplexers, switchesDescription: IC: digital; 4bit,analog,demultiplexer,multiplexer; Ch: 2; IN: 5 Type of integrated circuit: digital Kind of integrated circuit: 4bit; analog; demultiplexer; multiplexer Number of channels: 2 Number of inputs: 5 Technology: CMOS; TTL Mounting: SMD Case: TSSOP16 Family: HCT Operating temperature: -55...125°C Supply voltage: 4...5.5V DC Kind of package: reel; tape Manufacturer series: HCT |
товару немає в наявності |
Мінімальне замовлення: 2500 шт В кошику од. на суму грн. | ||||||||||||||||||
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MC74HCT4851ADR2G | ONSEMI |
Category: Decoders, multiplexers, switchesDescription: IC: digital; 8bit,analog,demultiplexer,multiplexer; Ch: 1; IN: 11 Type of integrated circuit: digital Kind of integrated circuit: 8bit; analog; demultiplexer; multiplexer Number of channels: 1 Number of inputs: 11 Technology: CMOS; TTL Mounting: SMD Case: SOIC16 Family: HCT Operating temperature: -55...125°C Supply voltage: 4.5...5.5V DC Kind of package: reel; tape Manufacturer series: HCT |
товару немає в наявності |
Мінімальне замовлення: 2500 шт В кошику од. на суму грн. | ||||||||||||||||||
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MC74HCT4852ADR2G | ONSEMI |
Category: Decoders, multiplexers, switchesDescription: IC: digital; 4bit,analog,demultiplexer,multiplexer; Ch: 2; IN: 8 Type of integrated circuit: digital Kind of integrated circuit: 4bit; analog; demultiplexer; multiplexer Number of channels: 2 Number of inputs: 8 Technology: CMOS; TTL Mounting: SMD Case: SOIC16 Family: HCT Operating temperature: -55...125°C Supply voltage: 4.5...5.5V DC Kind of package: reel; tape Manufacturer series: HCT |
товару немає в наявності |
Мінімальне замовлення: 2500 шт В кошику од. на суму грн. | ||||||||||||||||||
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MC74ACT02DR2G | ONSEMI |
Category: Gates, invertersDescription: IC: digital; NOR; Ch: 4; IN: 2; TTL; SMD; SOIC14; ACT; 4.5÷5.5VDC; ACT Type of integrated circuit: digital Kind of gate: NOR Number of channels: 4 Number of inputs: 2 Mounting: SMD Case: SOIC14 Supply voltage: 4.5...5.5V DC Operating temperature: -40...85°C Kind of package: reel; tape Family: ACT Manufacturer series: ACT Technology: TTL |
товару немає в наявності |
Мінімальне замовлення: 2500 шт В кошику од. на суму грн. | ||||||||||||||||||
| BC848CLT3G | ONSEMI |
Category: NPN SMD transistorsDescription: Transistor: NPN; bipolar; 30V; 100mA; 300mW; SC59 Type of transistor: NPN Polarisation: bipolar Collector-emitter voltage: 30V Collector current: 0.1A Power dissipation: 0.3W Case: SC59 Mounting: SMD Frequency: 100MHz |
товару немає в наявності |
В кошику од. на суму грн. | |||||||||||||||||||
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DTC143ZET1G | ONSEMI |
Category: NPN SMD transistorsDescription: Transistor: NPN; bipolar; BRT; 50V; 0.1A; 0.2W; SC75,SOT416; R2: 47kΩ Type of transistor: NPN Polarisation: bipolar Kind of transistor: BRT Collector-emitter voltage: 50V Collector current: 0.1A Power dissipation: 0.2W Case: SC75; SOT416 Mounting: SMD Kind of package: reel; tape Base resistor: 4.7kΩ Base-emitter resistor: 47kΩ Current gain: 80...200 |
на замовлення 6783 шт: термін постачання 14-30 дні (днів) |
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1N5400RLG | ONSEMI |
Category: THT universal diodesDescription: Diode: rectifying; THT; 50V; 3A; Ifsm: 200A; DO201AD; reel,tape Type of diode: rectifying Mounting: THT Max. off-state voltage: 50V Load current: 3A Semiconductor structure: single diode Max. forward impulse current: 200A Case: DO201AD Kind of package: reel; tape |
на замовлення 980 шт: термін постачання 14-30 дні (днів) |
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| 1N5400G | ONSEMI |
Category: THT universal diodesDescription: Diode: rectifying; THT; 50V; 3A; Ifsm: 200A; DO201AD; bulk Type of diode: rectifying Mounting: THT Max. off-state voltage: 50V Load current: 3A Semiconductor structure: single diode Max. forward impulse current: 200A Case: DO201AD Kind of package: bulk |
товару немає в наявності |
В кошику од. на суму грн. | |||||||||||||||||||
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2SD1624T-TD-E | ONSEMI |
Category: NPN SMD transistorsDescription: Transistor: NPN; bipolar; 50V; 3A; 1.5W; SOT89 Type of transistor: NPN Polarisation: bipolar Collector-emitter voltage: 50V Collector current: 3A Power dissipation: 1.5W Case: SOT89 Current gain: 200...400 Mounting: SMD Kind of package: reel; tape Frequency: 150MHz |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||||||||||||
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2SD1624S-TD-E | ONSEMI |
Category: NPN SMD transistorsDescription: Transistor: NPN; bipolar; 50V; 3A; 1.5W; SOT89 Type of transistor: NPN Polarisation: bipolar Collector-emitter voltage: 50V Collector current: 3A Power dissipation: 1.5W Case: SOT89 Current gain: 140...280 Mounting: SMD Kind of package: reel; tape Frequency: 150MHz |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||||||||||||
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NTS4173PT1G | ONSEMI |
Category: SMD P channel transistorsDescription: Transistor: P-MOSFET; unipolar; -30V; -0.8A; Idm: -5A; 290mW Type of transistor: P-MOSFET Polarisation: unipolar Drain-source voltage: -30V Drain current: -800mA Pulsed drain current: -5A Power dissipation: 0.29W Case: SC70; SOT323 Gate-source voltage: ±12V On-state resistance: 0.15Ω Mounting: SMD Gate charge: 10.1nC Kind of package: reel; tape Kind of channel: enhancement |
на замовлення 2561 шт: термін постачання 14-30 дні (днів) |
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| BB-GEVK | ONSEMI |
Category: Development kits - othersDescription: Dev.kit: evaluation; prototype board; Comp: FT232BL,NCS36510 Type of development kit: evaluation Kit contents: prototype board Components: FT232BL; NCS36510 Interface: GPIO; I2C; SPI; UART Connection: pin strips; Pmod socket x2; power supply; USB |
товару немає в наявності |
В кошику од. на суму грн. | |||||||||||||||||||
| FDMC012N03 | ONSEMI |
Category: SMD N channel transistorsDescription: Transistor: N-MOSFET; unipolar; 30V; 117A; Idm: 688A; 64W; Power33 Type of transistor: N-MOSFET Polarisation: unipolar Drain-source voltage: 30V Drain current: 117A Pulsed drain current: 688A Power dissipation: 64W Case: Power33 Gate-source voltage: ±12V On-state resistance: 1.77mΩ Mounting: SMD Gate charge: 110nC Kind of package: reel; tape Kind of channel: enhancement |
товару немає в наявності |
В кошику од. на суму грн. | |||||||||||||||||||
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FDB035AN06A0 | ONSEMI |
Category: SMD N channel transistorsDescription: Transistor: N-MOSFET; unipolar; 60V; 80A; 310W; D2PAK Mounting: SMD Power dissipation: 310W Gate charge: 124nC Polarisation: unipolar Technology: PowerTrench® Drain current: 80A Kind of channel: enhancement Drain-source voltage: 60V Type of transistor: N-MOSFET Gate-source voltage: ±20V Kind of package: reel; tape Case: D2PAK On-state resistance: 7.1mΩ |
на замовлення 161 шт: термін постачання 14-30 дні (днів) |
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MC78LC33NTRG | ONSEMI |
Category: LDO fixed voltage regulatorsDescription: IC: voltage regulator; LDO,linear,fixed; 3.3V; 80mA; TSOT23-5; SMD Type of integrated circuit: voltage regulator Kind of voltage regulator: fixed; LDO; linear Voltage drop: 53mV Output voltage: 3.3V Output current: 80mA Case: TSOT23-5 Mounting: SMD Manufacturer series: MC78LC00 Kind of package: reel; tape Operating temperature: -40...85°C Tolerance: ±2.5% Number of channels: 1 Input voltage: 4.3...12V |
на замовлення 2906 шт: термін постачання 14-30 дні (днів) |
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MC78LC50NTRG | ONSEMI |
Category: LDO fixed voltage regulatorsDescription: IC: voltage regulator; LDO,linear,fixed; 5V; 0.1A; TSOP5; SMD; Ch: 1 Type of integrated circuit: voltage regulator Kind of voltage regulator: fixed; LDO; linear Voltage drop: 38mV Output voltage: 5V Output current: 0.1A Case: TSOP5 Mounting: SMD Manufacturer series: MC78LC00 Kind of package: reel; tape Operating temperature: -40...85°C Tolerance: ±2.5% Number of channels: 1 Input voltage: 6...12V |
на замовлення 2880 шт: термін постачання 14-30 дні (днів) |
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| FAN53601UC182X | ONSEMI |
Category: Voltage regulators - DC/DC circuitsDescription: PMIC; DC/DC converter; WLCSP6; SMD; reel,tape Type of integrated circuit: PMIC Kind of integrated circuit: DC/DC converter Case: WLCSP6 Mounting: SMD Kind of package: reel; tape |
товару немає в наявності |
В кошику од. на суму грн. | |||||||||||||||||||
| FAN53611AUC18X | ONSEMI |
Category: Voltage regulators - DC/DC circuitsDescription: PMIC; DC/DC converter; WLCSP6; SMD; reel,tape Type of integrated circuit: PMIC Kind of integrated circuit: DC/DC converter Case: WLCSP6 Mounting: SMD Kind of package: reel; tape |
товару немає в наявності |
В кошику од. на суму грн. | |||||||||||||||||||
| FGY40T120SMD | ONSEMI |
Category: THT IGBT transistorsDescription: Transistor: IGBT; 1.2kV; 40A; 441W; TO247H03 Type of transistor: IGBT Collector-emitter voltage: 1.2kV Collector current: 40A Power dissipation: 441W Case: TO247H03 Gate-emitter voltage: ±25V Pulsed collector current: 160A Mounting: THT Gate charge: 0.37µC Kind of package: tube Features of semiconductor devices: integrated anti-parallel diode |
товару немає в наявності |
Мінімальне замовлення: 450 шт В кошику од. на суму грн. | |||||||||||||||||||
| FGHL40T120RWD | ONSEMI |
Category: THT IGBT transistorsDescription: Transistor: IGBT; 1.2kV; 40A; 300W; TO247-3 Type of transistor: IGBT Collector-emitter voltage: 1.2kV Collector current: 40A Power dissipation: 300W Case: TO247-3 Gate-emitter voltage: ±20V Pulsed collector current: 120A Mounting: THT Gate charge: 174nC Kind of package: tube |
товару немає в наявності |
В кошику од. на суму грн. | |||||||||||||||||||
| FGY140T120SWD | ONSEMI |
Category: THT IGBT transistorsDescription: Transistor: IGBT; 1.2kV; 140A; 576W; TO247-3 Type of transistor: IGBT Collector-emitter voltage: 1.2kV Collector current: 140A Power dissipation: 576W Case: TO247-3 Gate-emitter voltage: ±20V Pulsed collector current: 560A Mounting: THT Gate charge: 415.4nC Kind of package: tube |
товару немає в наявності |
В кошику од. на суму грн. | |||||||||||||||||||
| FGH4L40T120LQD | ONSEMI |
Category: THT IGBT transistorsDescription: Transistor: IGBT; 1.2kV; 40A; 153W; TO247-4 Type of transistor: IGBT Collector-emitter voltage: 1.2kV Collector current: 40A Power dissipation: 153W Case: TO247-4 Gate-emitter voltage: ±20V Pulsed collector current: 160A Mounting: THT Gate charge: 227nC Kind of package: tube Features of semiconductor devices: Kelvin terminal |
товару немає в наявності |
В кошику од. на суму грн. | |||||||||||||||||||
| AFGHL40T120RWD | ONSEMI |
Category: THT IGBT transistorsDescription: Transistor: IGBT; 1.2kV; 40A; 326W; TO247-3 Type of transistor: IGBT Collector-emitter voltage: 1.2kV Collector current: 40A Power dissipation: 326W Case: TO247-3 Gate-emitter voltage: ±20V Pulsed collector current: 120A Mounting: THT Gate charge: 170nC Kind of package: tube |
товару немає в наявності |
В кошику од. на суму грн. | |||||||||||||||||||
| NSPM5131MUTBG | ONSEMI |
Category: Unidirectional TVS SMD diodesDescription: Diode: TVS; 16.5V; uDFN6; reel,tape Case: uDFN6 Mounting: SMD Breakdown voltage: 16.5V Max. off-state voltage: 13.5V Kind of package: reel; tape Type of diode: TVS |
товару немає в наявності |
В кошику од. на суму грн. | |||||||||||||||||||
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2N6284G | ONSEMI |
Category: NPN THT Darlington transistorsDescription: Transistor: NPN; bipolar; Darlington; 100V; 20A; 160W; TO3 Type of transistor: NPN Polarisation: bipolar Kind of transistor: Darlington Collector-emitter voltage: 100V Collector current: 20A Power dissipation: 160W Case: TO3 Current gain: 100...18000 Mounting: THT Kind of package: in-tray |
на замовлення 116 шт: термін постачання 14-30 дні (днів) |
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2N6292G | ONSEMI |
Category: NPN THT transistorsDescription: Transistor: NPN; bipolar; 80V; 7A; 40W; TO220AB Type of transistor: NPN Polarisation: bipolar Collector-emitter voltage: 80V Collector current: 7A Power dissipation: 40W Case: TO220AB Mounting: THT Kind of package: tube Frequency: 4MHz |
на замовлення 960 шт: термін постачання 14-30 дні (днів) |
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NDT2955 | ONSEMI |
Category: SMD P channel transistorsDescription: Transistor: P-MOSFET; unipolar; -60V; -2.5A; 3W; SOT223 Type of transistor: P-MOSFET Polarisation: unipolar Drain-source voltage: -60V Drain current: -2.5A Power dissipation: 3W Case: SOT223 On-state resistance: 0.3Ω Mounting: SMD Kind of package: reel; tape Kind of channel: enhancement Gate-source voltage: ±20V |
на замовлення 7173 шт: термін постачання 14-30 дні (днів) |
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NTF2955T1G | ONSEMI |
Category: SMD P channel transistorsDescription: Transistor: P-MOSFET; unipolar; -60V; -2A; 2.3W; SOT223 Type of transistor: P-MOSFET Polarisation: unipolar Drain-source voltage: -60V Drain current: -2A Power dissipation: 2.3W Case: SOT223 Gate-source voltage: ±20V On-state resistance: 0.185Ω Mounting: SMD Kind of package: reel; tape Kind of channel: enhancement |
на замовлення 418 шт: термін постачання 14-30 дні (днів) |
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NVF2955T1G | ONSEMI |
Category: SMD P channel transistorsDescription: Transistor: P-MOSFET; unipolar; -60V; -2.6A; 2.3W; SOT223 Mounting: SMD Power dissipation: 2.3W Gate charge: 14.3nC Polarisation: unipolar Drain current: -2.6A Kind of channel: enhancement Drain-source voltage: -60V Type of transistor: P-MOSFET Gate-source voltage: ±20V Kind of package: reel; tape Case: SOT223 On-state resistance: 154mΩ |
на замовлення 635 шт: термін постачання 14-30 дні (днів) |
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MJD2955G | ONSEMI |
Category: PNP SMD transistorsDescription: Transistor: PNP; bipolar; 60V; 10A; 20W; DPAK Mounting: SMD Collector-emitter voltage: 60V Power dissipation: 20W Polarisation: bipolar Type of transistor: PNP Current gain: 20...100 Kind of package: tube Case: DPAK Frequency: 2MHz Collector current: 10A |
на замовлення 21 шт: термін постачання 14-30 дні (днів) |
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MJE2955TG | ONSEMI |
Category: PNP THT transistorsDescription: Transistor: PNP; bipolar; 60V; 10A; 125W; TO220AB Type of transistor: PNP Polarisation: bipolar Collector-emitter voltage: 60V Collector current: 10A Power dissipation: 125W Case: TO220AB Mounting: THT Kind of package: tube Frequency: 2MHz Current gain: 20...100 |
на замовлення 103 шт: термін постачання 14-30 дні (днів) |
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SVD2955T4G | ONSEMI |
Category: SMD P channel transistorsDescription: Transistor: P-MOSFET; unipolar; -60V; -12A; Idm: -18A; 55W; DPAK Mounting: SMD Pulsed drain current: -18A Power dissipation: 55W Gate charge: 15nC Polarisation: unipolar Drain current: -12A Kind of channel: enhancement Drain-source voltage: -60V Type of transistor: P-MOSFET Gate-source voltage: ±20V Kind of package: reel; tape Case: DPAK On-state resistance: 0.18Ω |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||||||||||||
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MJD2955T4G | ONSEMI |
Category: PNP SMD transistorsDescription: Transistor: PNP; bipolar; 60V; 10A; 20W; DPAK Mounting: SMD Collector-emitter voltage: 60V Power dissipation: 20W Polarisation: bipolar Type of transistor: PNP Current gain: 20...100 Kind of package: reel; tape Case: DPAK Frequency: 2MHz Collector current: 10A |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||||||||||||
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MJF2955G | ONSEMI |
Category: PNP THT transistorsDescription: Transistor: PNP; bipolar; 90V; 10A; 30W; TO220FP Mounting: THT Collector-emitter voltage: 90V Power dissipation: 30W Polarisation: bipolar Type of transistor: PNP Current gain: 20...100 Kind of package: tube Case: TO220FP Frequency: 2MHz Collector current: 10A |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||||||||||||
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NCV8535MN500R2G | ONSEMI |
Category: LDO fixed voltage regulatorsDescription: IC: voltage regulator; LDO,linear,fixed; 5V; 0.5A; DFN10; SMD; Ch: 1 Kind of voltage regulator: fixed; LDO; linear Output current: 0.5A Type of integrated circuit: voltage regulator Application: automotive industry Output voltage: 5V Kind of package: reel; tape Case: DFN10 Number of channels: 1 Mounting: SMD |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||||||||||||
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NCV8535MN330R2G | ONSEMI |
Category: LDO fixed voltage regulatorsDescription: IC: voltage regulator; LDO,linear,fixed; 3.3V; 0.5A; DFN10; SMD Kind of voltage regulator: fixed; LDO; linear Output current: 0.5A Type of integrated circuit: voltage regulator Application: automotive industry Output voltage: 3.3V Kind of package: reel; tape Case: DFN10 Number of channels: 1 Mounting: SMD |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||||||||||||
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MM74HCT14M | ONSEMI |
Category: Gates, invertersDescription: IC: digital; NOT; Ch: 6; IN: 1; CMOS; SMD; SO14; 4.5÷5.5VDC; -40÷85°C Type of integrated circuit: digital Number of channels: hex; 6 Number of inputs: 1 Mounting: SMD Case: SO14 Operating temperature: -40...85°C Quiescent current: 10µA Family: HCT Supply voltage: 4.5...5.5V DC Technology: CMOS Kind of input: with Schmitt trigger Kind of package: tube Kind of gate: NOT |
на замовлення 84 шт: термін постачання 14-30 дні (днів) |
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MC74HCT14ADG | ONSEMI |
Category: Gates, invertersDescription: IC: digital; NOT; Ch: 6; IN: 1; CMOS; SMD; SO14; 4.5÷5.5VDC; -55÷125°C Type of integrated circuit: digital Kind of gate: NOT Number of channels: hex; 6 Number of inputs: 1 Technology: CMOS Mounting: SMD Case: SO14 Supply voltage: 4.5...5.5V DC Operating temperature: -55...125°C Kind of package: tube Delay time: 32ns Family: HCT Kind of input: with Schmitt trigger |
на замовлення 53 шт: термін постачання 14-30 дні (днів) |
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MM74HCT14MX | ONSEMI |
Category: Gates, invertersDescription: IC: digital; NOT; Ch: 6; IN: 1; CMOS; SMD; SO14; 4.5÷5.5VDC; -40÷85°C Type of integrated circuit: digital Number of channels: hex; 6 Number of inputs: 1 Mounting: SMD Case: SO14 Operating temperature: -40...85°C Family: HCT Supply voltage: 4.5...5.5V DC Technology: CMOS Kind of input: with Schmitt trigger Kind of package: reel; tape Delay time: 13ns Kind of gate: NOT |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||||||||||||
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MC74HCT14ADR2G | ONSEMI |
Category: Gates, invertersDescription: IC: digital; NOT; Ch: 6; IN: 1; CMOS; SMD; SO14; 4.5÷5.5VDC; -55÷125°C Type of integrated circuit: digital Number of channels: hex; 6 Number of inputs: 1 Mounting: SMD Case: SO14 Operating temperature: -55...125°C Family: HCT Supply voltage: 4.5...5.5V DC Technology: CMOS Kind of input: with Schmitt trigger Kind of package: reel; tape Delay time: 32ns Kind of gate: NOT |
товару немає в наявності |
Мінімальне замовлення: 2500 шт В кошику од. на суму грн. | ||||||||||||||||||
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MC74HCT14ADTR2G | ONSEMI |
Category: Gates, invertersDescription: IC: digital; NOT; Ch: 6; IN: 1; CMOS; SMD; TSSOP14; 4.5÷5.5VDC; 32ns Type of integrated circuit: digital Number of channels: hex; 6 Number of inputs: 1 Mounting: SMD Case: TSSOP14 Operating temperature: -55...125°C Family: HCT Supply voltage: 4.5...5.5V DC Technology: CMOS Kind of input: with Schmitt trigger Kind of package: reel; tape Delay time: 32ns Kind of gate: NOT |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||||||||||||
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MM74HCT14MTCX | ONSEMI |
Category: Gates, invertersDescription: IC: digital; NOT; Ch: 6; IN: 1; CMOS; SMD; TSSOP14; 4.5÷5.5VDC; 13ns Type of integrated circuit: digital Number of channels: hex; 6 Number of inputs: 1 Mounting: SMD Case: TSSOP14 Operating temperature: -40...85°C Family: HCT Supply voltage: 4.5...5.5V DC Technology: CMOS Kind of input: with Schmitt trigger Kind of package: reel; tape Delay time: 13ns Kind of gate: NOT |
товару немає в наявності |
Мінімальне замовлення: 2500 шт В кошику од. на суму грн. | ||||||||||||||||||
| MC33164D-5R2G | ONSEMI |
Category: Supervisor circuitsDescription: IC: supervisor circuit; open drain; Active logical level: low Mounting: SMD Supply voltage: 1...10V Active logical level: low Type of integrated circuit: supervisor circuit Operating temperature: -40...125°C Threshold on-voltage: 5V Case: SOIC8 Kind of integrated circuit: power on reset monitor (PoR); voltage detector Number of channels: 1 Kind of RESET output: open drain |
товару немає в наявності |
В кошику од. на суму грн. | |||||||||||||||||||
| MC33164D-3R2G | ONSEMI |
Category: Supervisor circuitsDescription: IC: supervisor circuit; open drain; Active logical level: low Mounting: SMD Supply voltage: 1...10V Active logical level: low Type of integrated circuit: supervisor circuit Operating temperature: -40...125°C Threshold on-voltage: 3V Case: SOIC8 Kind of integrated circuit: power on reset monitor (PoR); voltage detector Number of channels: 1 Kind of RESET output: open drain |
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В кошику од. на суму грн. | |||||||||||||||||||
| MC33164DM-3R2G | ONSEMI |
Category: Supervisor circuitsDescription: IC: supervisor circuit; open drain; Active logical level: low Mounting: SMD Supply voltage: 1...10V Active logical level: low Type of integrated circuit: supervisor circuit Operating temperature: -40...125°C Threshold on-voltage: 3V Case: TSSOP8 Kind of integrated circuit: power on reset monitor (PoR); voltage detector Number of channels: 1 Kind of RESET output: open drain |
товару немає в наявності |
Мінімальне замовлення: 4000 шт В кошику од. на суму грн. | |||||||||||||||||||
| MC33164DM-5R2G | ONSEMI |
Category: Supervisor circuitsDescription: IC: supervisor circuit; open drain; Active logical level: low Mounting: SMD Supply voltage: 1...10V Active logical level: low Type of integrated circuit: supervisor circuit Operating temperature: -40...125°C Threshold on-voltage: 5V Case: TSSOP8 Kind of integrated circuit: power on reset monitor (PoR); voltage detector Number of channels: 1 Kind of RESET output: open drain |
товару немає в наявності |
Мінімальне замовлення: 4000 шт В кошику од. на суму грн. | |||||||||||||||||||
| MC34164D-5G | ONSEMI |
Category: Supervisor circuitsDescription: IC: supervisor circuit; open drain; Active logical level: low Supply voltage: 10V Active logical level: low Type of integrated circuit: supervisor circuit Operating temperature: 0...70°C Threshold on-voltage: 5V Case: SOIC8 Kind of integrated circuit: power on reset monitor (PoR); voltage detector Number of channels: 1 Kind of RESET output: open drain Mounting: SMD |
товару немає в наявності |
В кошику од. на суму грн. |
| BSR16 |
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Виробник: ONSEMI
Category: PNP SMD transistors
Description: Transistor: PNP; bipolar; 60V; 0.8A; 0.35W; SOT23,TO236AB
Kind of package: reel; tape
Case: SOT23; TO236AB
Frequency: 300MHz
Collector current: 0.8A
Mounting: SMD
Collector-emitter voltage: 60V
Power dissipation: 0.35W
Polarisation: bipolar
Type of transistor: PNP
Category: PNP SMD transistors
Description: Transistor: PNP; bipolar; 60V; 0.8A; 0.35W; SOT23,TO236AB
Kind of package: reel; tape
Case: SOT23; TO236AB
Frequency: 300MHz
Collector current: 0.8A
Mounting: SMD
Collector-emitter voltage: 60V
Power dissipation: 0.35W
Polarisation: bipolar
Type of transistor: PNP
на замовлення 3287 шт:
термін постачання 14-30 дні (днів)
| Кількість | Ціна без ПДВ |
|---|---|
| 14+ | 32.51 грн |
| 22+ | 19.88 грн |
| 50+ | 13.08 грн |
| 100+ | 11.07 грн |
| 500+ | 8.05 грн |
| 1000+ | 7.30 грн |
| 3000+ | 6.46 грн |
| BZX84C3V6LT1G |
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Виробник: ONSEMI
Category: SMD Zener diodes
Description: Diode: Zener; 0.3W; 3.6V; SMD; SOT23; single diode; reel,tape
Type of diode: Zener
Power dissipation: 0.3W
Zener voltage: 3.6V
Mounting: SMD
Tolerance: ±5%
Case: SOT23
Semiconductor structure: single diode
Kind of package: reel; tape
Manufacturer series: BZX84C
Category: SMD Zener diodes
Description: Diode: Zener; 0.3W; 3.6V; SMD; SOT23; single diode; reel,tape
Type of diode: Zener
Power dissipation: 0.3W
Zener voltage: 3.6V
Mounting: SMD
Tolerance: ±5%
Case: SOT23
Semiconductor structure: single diode
Kind of package: reel; tape
Manufacturer series: BZX84C
на замовлення 3065 шт:
термін постачання 14-30 дні (днів)
| Кількість | Ціна без ПДВ |
|---|---|
| 63+ | 7.23 грн |
| 70+ | 6.04 грн |
| 82+ | 5.12 грн |
| 132+ | 3.19 грн |
| 160+ | 2.62 грн |
| 250+ | 2.13 грн |
| 500+ | 1.89 грн |
| 1000+ | 1.62 грн |
| 3000+ | 1.39 грн |
| 1N5361BG |
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Виробник: ONSEMI
Category: THT Zener diodes
Description: Diode: Zener; 5W; 27V; CASE017AA; single diode; bulk; 1N53xxB
Type of diode: Zener
Power dissipation: 5W
Zener voltage: 27V
Mounting: THT
Tolerance: ±5%
Semiconductor structure: single diode
Manufacturer series: 1N53xxB
Kind of package: bulk
Case: CASE017AA
Category: THT Zener diodes
Description: Diode: Zener; 5W; 27V; CASE017AA; single diode; bulk; 1N53xxB
Type of diode: Zener
Power dissipation: 5W
Zener voltage: 27V
Mounting: THT
Tolerance: ±5%
Semiconductor structure: single diode
Manufacturer series: 1N53xxB
Kind of package: bulk
Case: CASE017AA
на замовлення 620 шт:
термін постачання 14-30 дні (днів)
| Кількість | Ціна без ПДВ |
|---|---|
| 15+ | 30.71 грн |
| 21+ | 20.46 грн |
| 24+ | 18.20 грн |
| 50+ | 14.84 грн |
| 100+ | 13.67 грн |
| 500+ | 13.25 грн |
| 1N5361BRLG |
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Виробник: ONSEMI
Category: THT Zener diodes
Description: Diode: Zener; 5W; 27V; CASE017AA; single diode; reel,tape; 1N53xxB
Type of diode: Zener
Power dissipation: 5W
Zener voltage: 27V
Mounting: THT
Tolerance: ±5%
Semiconductor structure: single diode
Manufacturer series: 1N53xxB
Kind of package: reel; tape
Case: CASE017AA
Category: THT Zener diodes
Description: Diode: Zener; 5W; 27V; CASE017AA; single diode; reel,tape; 1N53xxB
Type of diode: Zener
Power dissipation: 5W
Zener voltage: 27V
Mounting: THT
Tolerance: ±5%
Semiconductor structure: single diode
Manufacturer series: 1N53xxB
Kind of package: reel; tape
Case: CASE017AA
товару немає в наявності
В кошику
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| NVMYS016N10MCLTWG |
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Виробник: ONSEMI
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 100V; 46A; Idm: 264A; 32W; LFPAK56
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 100V
Drain current: 46A
Pulsed drain current: 264A
Power dissipation: 32W
Case: LFPAK56
Gate-source voltage: ±20V
On-state resistance: 14mΩ
Mounting: SMD
Gate charge: 19nC
Kind of package: reel; tape
Kind of channel: enhancement
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 100V; 46A; Idm: 264A; 32W; LFPAK56
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 100V
Drain current: 46A
Pulsed drain current: 264A
Power dissipation: 32W
Case: LFPAK56
Gate-source voltage: ±20V
On-state resistance: 14mΩ
Mounting: SMD
Gate charge: 19nC
Kind of package: reel; tape
Kind of channel: enhancement
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В кошику
од. на суму грн.
| NVMFS016N10MCLT1G |
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Виробник: ONSEMI
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 100V; 46A; Idm: 243A; 32W; DFN5
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 100V
Drain current: 46A
Pulsed drain current: 243A
Power dissipation: 32W
Case: DFN5
Gate-source voltage: ±20V
On-state resistance: 14mΩ
Mounting: SMD
Gate charge: 19nC
Kind of package: reel; tape
Kind of channel: enhancement
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 100V; 46A; Idm: 243A; 32W; DFN5
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 100V
Drain current: 46A
Pulsed drain current: 243A
Power dissipation: 32W
Case: DFN5
Gate-source voltage: ±20V
On-state resistance: 14mΩ
Mounting: SMD
Gate charge: 19nC
Kind of package: reel; tape
Kind of channel: enhancement
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В кошику
од. на суму грн.
| NVMFWS016N10MCLT1G |
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Виробник: ONSEMI
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 100V; 46A; Idm: 243A; 32W; DFN5
Kind of package: reel; tape
Case: DFN5
On-state resistance: 14mΩ
Mounting: SMD
Pulsed drain current: 243A
Power dissipation: 32W
Gate charge: 19nC
Polarisation: unipolar
Drain current: 46A
Kind of channel: enhancement
Drain-source voltage: 100V
Type of transistor: N-MOSFET
Gate-source voltage: ±20V
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 100V; 46A; Idm: 243A; 32W; DFN5
Kind of package: reel; tape
Case: DFN5
On-state resistance: 14mΩ
Mounting: SMD
Pulsed drain current: 243A
Power dissipation: 32W
Gate charge: 19nC
Polarisation: unipolar
Drain current: 46A
Kind of channel: enhancement
Drain-source voltage: 100V
Type of transistor: N-MOSFET
Gate-source voltage: ±20V
товару немає в наявності
В кошику
од. на суму грн.
| MC14051BDR2G |
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Виробник: ONSEMI
Category: Analog multiplexers and switches
Description: IC: analog switch; demultiplexer,multiplexer; Ch: 1; SO16; 3÷18VDC
Type of integrated circuit: analog switch
Kind of integrated circuit: demultiplexer; multiplexer
Number of channels: 1
Technology: CMOS
Mounting: SMD
Case: SO16
Operating temperature: -40...85°C
Supply voltage: 3...18V DC
Kind of package: reel; tape
Quiescent current: 600µA
Kind of output: SP8T
Category: Analog multiplexers and switches
Description: IC: analog switch; demultiplexer,multiplexer; Ch: 1; SO16; 3÷18VDC
Type of integrated circuit: analog switch
Kind of integrated circuit: demultiplexer; multiplexer
Number of channels: 1
Technology: CMOS
Mounting: SMD
Case: SO16
Operating temperature: -40...85°C
Supply voltage: 3...18V DC
Kind of package: reel; tape
Quiescent current: 600µA
Kind of output: SP8T
товару немає в наявності
Мінімальне замовлення: 2500 шт
В кошику
од. на суму грн.
| NIV1161MTTAG |
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Виробник: ONSEMI
Category: Unidirectional TVS SMD diodes
Description: Diode: TVS; 23V; WDFN6; reel,tape; automotive industry
Case: WDFN6
Mounting: SMD
Kind of package: reel; tape
Type of diode: TVS
Max. off-state voltage: 16V
Breakdown voltage: 23V
Application: automotive industry
Category: Unidirectional TVS SMD diodes
Description: Diode: TVS; 23V; WDFN6; reel,tape; automotive industry
Case: WDFN6
Mounting: SMD
Kind of package: reel; tape
Type of diode: TVS
Max. off-state voltage: 16V
Breakdown voltage: 23V
Application: automotive industry
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| NIV2161MTTAG |
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Виробник: ONSEMI
Category: Protection diodes - arrays
Description: Diode: TVS array; 23V; bidirectional; WDFN10; Ch: 2; reel,tape
Case: WDFN10
Mounting: SMD
Number of channels: 2
Semiconductor structure: bidirectional
Kind of package: reel; tape
Type of diode: TVS array
Max. off-state voltage: 16V
Breakdown voltage: 23V
Application: automotive industry
Category: Protection diodes - arrays
Description: Diode: TVS array; 23V; bidirectional; WDFN10; Ch: 2; reel,tape
Case: WDFN10
Mounting: SMD
Number of channels: 2
Semiconductor structure: bidirectional
Kind of package: reel; tape
Type of diode: TVS array
Max. off-state voltage: 16V
Breakdown voltage: 23V
Application: automotive industry
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| NIS1161MTTAG |
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Виробник: ONSEMI
Category: Unidirectional TVS SMD diodes
Description: Diode: TVS; 23V; WDFN6; reel,tape
Case: WDFN6
Mounting: SMD
Kind of package: reel; tape
Type of diode: TVS
Max. off-state voltage: 16V
Breakdown voltage: 23V
Category: Unidirectional TVS SMD diodes
Description: Diode: TVS; 23V; WDFN6; reel,tape
Case: WDFN6
Mounting: SMD
Kind of package: reel; tape
Type of diode: TVS
Max. off-state voltage: 16V
Breakdown voltage: 23V
товару немає в наявності
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| NCP5106BDR2G |
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Виробник: ONSEMI
Category: MOSFET/IGBT drivers
Description: IC: driver; IGBT half-bridge,MOSFET half-bridge; SO8; -500÷250mA
Type of integrated circuit: driver
Topology: IGBT half-bridge; MOSFET half-bridge
Kind of integrated circuit: gate driver; high-/low-side
Case: SO8
Output current: -500...250mA
Number of channels: 2
Supply voltage: 10...20V DC
Mounting: SMD
Operating temperature: -40...125°C
Kind of package: reel; tape
Voltage class: 600V
Impulse rise time: 160ns
Protection: undervoltage UVP
Integrated circuit features: integrated bootstrap functionality
Pulse fall time: 75ns
Category: MOSFET/IGBT drivers
Description: IC: driver; IGBT half-bridge,MOSFET half-bridge; SO8; -500÷250mA
Type of integrated circuit: driver
Topology: IGBT half-bridge; MOSFET half-bridge
Kind of integrated circuit: gate driver; high-/low-side
Case: SO8
Output current: -500...250mA
Number of channels: 2
Supply voltage: 10...20V DC
Mounting: SMD
Operating temperature: -40...125°C
Kind of package: reel; tape
Voltage class: 600V
Impulse rise time: 160ns
Protection: undervoltage UVP
Integrated circuit features: integrated bootstrap functionality
Pulse fall time: 75ns
товару немає в наявності
Мінімальне замовлення: 2500 шт
В кошику
од. на суму грн.
| FGHL40T120SWD |
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Виробник: ONSEMI
Category: THT IGBT transistors
Description: Transistor: IGBT; 1.2kV; 40A; 234W; TO247-3
Type of transistor: IGBT
Collector-emitter voltage: 1.2kV
Collector current: 40A
Power dissipation: 234W
Case: TO247-3
Gate-emitter voltage: ±20V
Pulsed collector current: 160A
Mounting: THT
Gate charge: 118nC
Kind of package: tube
Category: THT IGBT transistors
Description: Transistor: IGBT; 1.2kV; 40A; 234W; TO247-3
Type of transistor: IGBT
Collector-emitter voltage: 1.2kV
Collector current: 40A
Power dissipation: 234W
Case: TO247-3
Gate-emitter voltage: ±20V
Pulsed collector current: 160A
Mounting: THT
Gate charge: 118nC
Kind of package: tube
на замовлення 355 шт:
термін постачання 14-30 дні (днів)
| Кількість | Ціна без ПДВ |
|---|---|
| 2+ | 339.59 грн |
| 3+ | 289.33 грн |
| 10+ | 249.08 грн |
| 30+ | 213.02 грн |
| 120+ | 200.44 грн |
| M74HCT4852ADTR2G |
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Виробник: ONSEMI
Category: Decoders, multiplexers, switches
Description: IC: digital; 4bit,analog,demultiplexer,multiplexer; Ch: 2; IN: 5
Type of integrated circuit: digital
Kind of integrated circuit: 4bit; analog; demultiplexer; multiplexer
Number of channels: 2
Number of inputs: 5
Technology: CMOS; TTL
Mounting: SMD
Case: TSSOP16
Family: HCT
Operating temperature: -55...125°C
Supply voltage: 4...5.5V DC
Kind of package: reel; tape
Manufacturer series: HCT
Category: Decoders, multiplexers, switches
Description: IC: digital; 4bit,analog,demultiplexer,multiplexer; Ch: 2; IN: 5
Type of integrated circuit: digital
Kind of integrated circuit: 4bit; analog; demultiplexer; multiplexer
Number of channels: 2
Number of inputs: 5
Technology: CMOS; TTL
Mounting: SMD
Case: TSSOP16
Family: HCT
Operating temperature: -55...125°C
Supply voltage: 4...5.5V DC
Kind of package: reel; tape
Manufacturer series: HCT
товару немає в наявності
Мінімальне замовлення: 2500 шт
В кошику
од. на суму грн.
| MC74HCT4851ADR2G |
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Виробник: ONSEMI
Category: Decoders, multiplexers, switches
Description: IC: digital; 8bit,analog,demultiplexer,multiplexer; Ch: 1; IN: 11
Type of integrated circuit: digital
Kind of integrated circuit: 8bit; analog; demultiplexer; multiplexer
Number of channels: 1
Number of inputs: 11
Technology: CMOS; TTL
Mounting: SMD
Case: SOIC16
Family: HCT
Operating temperature: -55...125°C
Supply voltage: 4.5...5.5V DC
Kind of package: reel; tape
Manufacturer series: HCT
Category: Decoders, multiplexers, switches
Description: IC: digital; 8bit,analog,demultiplexer,multiplexer; Ch: 1; IN: 11
Type of integrated circuit: digital
Kind of integrated circuit: 8bit; analog; demultiplexer; multiplexer
Number of channels: 1
Number of inputs: 11
Technology: CMOS; TTL
Mounting: SMD
Case: SOIC16
Family: HCT
Operating temperature: -55...125°C
Supply voltage: 4.5...5.5V DC
Kind of package: reel; tape
Manufacturer series: HCT
товару немає в наявності
Мінімальне замовлення: 2500 шт
В кошику
од. на суму грн.
| MC74HCT4852ADR2G |
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Виробник: ONSEMI
Category: Decoders, multiplexers, switches
Description: IC: digital; 4bit,analog,demultiplexer,multiplexer; Ch: 2; IN: 8
Type of integrated circuit: digital
Kind of integrated circuit: 4bit; analog; demultiplexer; multiplexer
Number of channels: 2
Number of inputs: 8
Technology: CMOS; TTL
Mounting: SMD
Case: SOIC16
Family: HCT
Operating temperature: -55...125°C
Supply voltage: 4.5...5.5V DC
Kind of package: reel; tape
Manufacturer series: HCT
Category: Decoders, multiplexers, switches
Description: IC: digital; 4bit,analog,demultiplexer,multiplexer; Ch: 2; IN: 8
Type of integrated circuit: digital
Kind of integrated circuit: 4bit; analog; demultiplexer; multiplexer
Number of channels: 2
Number of inputs: 8
Technology: CMOS; TTL
Mounting: SMD
Case: SOIC16
Family: HCT
Operating temperature: -55...125°C
Supply voltage: 4.5...5.5V DC
Kind of package: reel; tape
Manufacturer series: HCT
товару немає в наявності
Мінімальне замовлення: 2500 шт
В кошику
од. на суму грн.
| MC74ACT02DR2G |
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Виробник: ONSEMI
Category: Gates, inverters
Description: IC: digital; NOR; Ch: 4; IN: 2; TTL; SMD; SOIC14; ACT; 4.5÷5.5VDC; ACT
Type of integrated circuit: digital
Kind of gate: NOR
Number of channels: 4
Number of inputs: 2
Mounting: SMD
Case: SOIC14
Supply voltage: 4.5...5.5V DC
Operating temperature: -40...85°C
Kind of package: reel; tape
Family: ACT
Manufacturer series: ACT
Technology: TTL
Category: Gates, inverters
Description: IC: digital; NOR; Ch: 4; IN: 2; TTL; SMD; SOIC14; ACT; 4.5÷5.5VDC; ACT
Type of integrated circuit: digital
Kind of gate: NOR
Number of channels: 4
Number of inputs: 2
Mounting: SMD
Case: SOIC14
Supply voltage: 4.5...5.5V DC
Operating temperature: -40...85°C
Kind of package: reel; tape
Family: ACT
Manufacturer series: ACT
Technology: TTL
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Мінімальне замовлення: 2500 шт
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| BC848CLT3G |
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Виробник: ONSEMI
Category: NPN SMD transistors
Description: Transistor: NPN; bipolar; 30V; 100mA; 300mW; SC59
Type of transistor: NPN
Polarisation: bipolar
Collector-emitter voltage: 30V
Collector current: 0.1A
Power dissipation: 0.3W
Case: SC59
Mounting: SMD
Frequency: 100MHz
Category: NPN SMD transistors
Description: Transistor: NPN; bipolar; 30V; 100mA; 300mW; SC59
Type of transistor: NPN
Polarisation: bipolar
Collector-emitter voltage: 30V
Collector current: 0.1A
Power dissipation: 0.3W
Case: SC59
Mounting: SMD
Frequency: 100MHz
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| DTC143ZET1G |
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Виробник: ONSEMI
Category: NPN SMD transistors
Description: Transistor: NPN; bipolar; BRT; 50V; 0.1A; 0.2W; SC75,SOT416; R2: 47kΩ
Type of transistor: NPN
Polarisation: bipolar
Kind of transistor: BRT
Collector-emitter voltage: 50V
Collector current: 0.1A
Power dissipation: 0.2W
Case: SC75; SOT416
Mounting: SMD
Kind of package: reel; tape
Base resistor: 4.7kΩ
Base-emitter resistor: 47kΩ
Current gain: 80...200
Category: NPN SMD transistors
Description: Transistor: NPN; bipolar; BRT; 50V; 0.1A; 0.2W; SC75,SOT416; R2: 47kΩ
Type of transistor: NPN
Polarisation: bipolar
Kind of transistor: BRT
Collector-emitter voltage: 50V
Collector current: 0.1A
Power dissipation: 0.2W
Case: SC75; SOT416
Mounting: SMD
Kind of package: reel; tape
Base resistor: 4.7kΩ
Base-emitter resistor: 47kΩ
Current gain: 80...200
на замовлення 6783 шт:
термін постачання 14-30 дні (днів)
| Кількість | Ціна без ПДВ |
|---|---|
| 50+ | 9.03 грн |
| 69+ | 6.12 грн |
| 99+ | 4.26 грн |
| 116+ | 3.64 грн |
| 500+ | 2.62 грн |
| 1000+ | 2.31 грн |
| 3000+ | 1.85 грн |
| 1N5400RLG |
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Виробник: ONSEMI
Category: THT universal diodes
Description: Diode: rectifying; THT; 50V; 3A; Ifsm: 200A; DO201AD; reel,tape
Type of diode: rectifying
Mounting: THT
Max. off-state voltage: 50V
Load current: 3A
Semiconductor structure: single diode
Max. forward impulse current: 200A
Case: DO201AD
Kind of package: reel; tape
Category: THT universal diodes
Description: Diode: rectifying; THT; 50V; 3A; Ifsm: 200A; DO201AD; reel,tape
Type of diode: rectifying
Mounting: THT
Max. off-state voltage: 50V
Load current: 3A
Semiconductor structure: single diode
Max. forward impulse current: 200A
Case: DO201AD
Kind of package: reel; tape
на замовлення 980 шт:
термін постачання 14-30 дні (днів)
| Кількість | Ціна без ПДВ |
|---|---|
| 36+ | 12.64 грн |
| 38+ | 11.24 грн |
| 39+ | 10.82 грн |
| 41+ | 10.40 грн |
| 50+ | 9.98 грн |
| 100+ | 9.64 грн |
| 500+ | 8.55 грн |
| 1N5400G |
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Виробник: ONSEMI
Category: THT universal diodes
Description: Diode: rectifying; THT; 50V; 3A; Ifsm: 200A; DO201AD; bulk
Type of diode: rectifying
Mounting: THT
Max. off-state voltage: 50V
Load current: 3A
Semiconductor structure: single diode
Max. forward impulse current: 200A
Case: DO201AD
Kind of package: bulk
Category: THT universal diodes
Description: Diode: rectifying; THT; 50V; 3A; Ifsm: 200A; DO201AD; bulk
Type of diode: rectifying
Mounting: THT
Max. off-state voltage: 50V
Load current: 3A
Semiconductor structure: single diode
Max. forward impulse current: 200A
Case: DO201AD
Kind of package: bulk
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| 2SD1624T-TD-E |
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Виробник: ONSEMI
Category: NPN SMD transistors
Description: Transistor: NPN; bipolar; 50V; 3A; 1.5W; SOT89
Type of transistor: NPN
Polarisation: bipolar
Collector-emitter voltage: 50V
Collector current: 3A
Power dissipation: 1.5W
Case: SOT89
Current gain: 200...400
Mounting: SMD
Kind of package: reel; tape
Frequency: 150MHz
Category: NPN SMD transistors
Description: Transistor: NPN; bipolar; 50V; 3A; 1.5W; SOT89
Type of transistor: NPN
Polarisation: bipolar
Collector-emitter voltage: 50V
Collector current: 3A
Power dissipation: 1.5W
Case: SOT89
Current gain: 200...400
Mounting: SMD
Kind of package: reel; tape
Frequency: 150MHz
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| 2SD1624S-TD-E |
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Виробник: ONSEMI
Category: NPN SMD transistors
Description: Transistor: NPN; bipolar; 50V; 3A; 1.5W; SOT89
Type of transistor: NPN
Polarisation: bipolar
Collector-emitter voltage: 50V
Collector current: 3A
Power dissipation: 1.5W
Case: SOT89
Current gain: 140...280
Mounting: SMD
Kind of package: reel; tape
Frequency: 150MHz
Category: NPN SMD transistors
Description: Transistor: NPN; bipolar; 50V; 3A; 1.5W; SOT89
Type of transistor: NPN
Polarisation: bipolar
Collector-emitter voltage: 50V
Collector current: 3A
Power dissipation: 1.5W
Case: SOT89
Current gain: 140...280
Mounting: SMD
Kind of package: reel; tape
Frequency: 150MHz
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| NTS4173PT1G |
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Виробник: ONSEMI
Category: SMD P channel transistors
Description: Transistor: P-MOSFET; unipolar; -30V; -0.8A; Idm: -5A; 290mW
Type of transistor: P-MOSFET
Polarisation: unipolar
Drain-source voltage: -30V
Drain current: -800mA
Pulsed drain current: -5A
Power dissipation: 0.29W
Case: SC70; SOT323
Gate-source voltage: ±12V
On-state resistance: 0.15Ω
Mounting: SMD
Gate charge: 10.1nC
Kind of package: reel; tape
Kind of channel: enhancement
Category: SMD P channel transistors
Description: Transistor: P-MOSFET; unipolar; -30V; -0.8A; Idm: -5A; 290mW
Type of transistor: P-MOSFET
Polarisation: unipolar
Drain-source voltage: -30V
Drain current: -800mA
Pulsed drain current: -5A
Power dissipation: 0.29W
Case: SC70; SOT323
Gate-source voltage: ±12V
On-state resistance: 0.15Ω
Mounting: SMD
Gate charge: 10.1nC
Kind of package: reel; tape
Kind of channel: enhancement
на замовлення 2561 шт:
термін постачання 14-30 дні (днів)
| Кількість | Ціна без ПДВ |
|---|---|
| 24+ | 18.97 грн |
| 35+ | 12.24 грн |
| 41+ | 10.32 грн |
| 50+ | 9.14 грн |
| 100+ | 8.30 грн |
| 250+ | 7.55 грн |
| 500+ | 6.88 грн |
| 1000+ | 6.04 грн |
| BB-GEVK |
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Виробник: ONSEMI
Category: Development kits - others
Description: Dev.kit: evaluation; prototype board; Comp: FT232BL,NCS36510
Type of development kit: evaluation
Kit contents: prototype board
Components: FT232BL; NCS36510
Interface: GPIO; I2C; SPI; UART
Connection: pin strips; Pmod socket x2; power supply; USB
Category: Development kits - others
Description: Dev.kit: evaluation; prototype board; Comp: FT232BL,NCS36510
Type of development kit: evaluation
Kit contents: prototype board
Components: FT232BL; NCS36510
Interface: GPIO; I2C; SPI; UART
Connection: pin strips; Pmod socket x2; power supply; USB
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| FDMC012N03 |
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Виробник: ONSEMI
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 30V; 117A; Idm: 688A; 64W; Power33
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 30V
Drain current: 117A
Pulsed drain current: 688A
Power dissipation: 64W
Case: Power33
Gate-source voltage: ±12V
On-state resistance: 1.77mΩ
Mounting: SMD
Gate charge: 110nC
Kind of package: reel; tape
Kind of channel: enhancement
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 30V; 117A; Idm: 688A; 64W; Power33
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 30V
Drain current: 117A
Pulsed drain current: 688A
Power dissipation: 64W
Case: Power33
Gate-source voltage: ±12V
On-state resistance: 1.77mΩ
Mounting: SMD
Gate charge: 110nC
Kind of package: reel; tape
Kind of channel: enhancement
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| FDB035AN06A0 |
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Виробник: ONSEMI
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 60V; 80A; 310W; D2PAK
Mounting: SMD
Power dissipation: 310W
Gate charge: 124nC
Polarisation: unipolar
Technology: PowerTrench®
Drain current: 80A
Kind of channel: enhancement
Drain-source voltage: 60V
Type of transistor: N-MOSFET
Gate-source voltage: ±20V
Kind of package: reel; tape
Case: D2PAK
On-state resistance: 7.1mΩ
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 60V; 80A; 310W; D2PAK
Mounting: SMD
Power dissipation: 310W
Gate charge: 124nC
Polarisation: unipolar
Technology: PowerTrench®
Drain current: 80A
Kind of channel: enhancement
Drain-source voltage: 60V
Type of transistor: N-MOSFET
Gate-source voltage: ±20V
Kind of package: reel; tape
Case: D2PAK
On-state resistance: 7.1mΩ
на замовлення 161 шт:
термін постачання 14-30 дні (днів)
| Кількість | Ціна без ПДВ |
|---|---|
| 2+ | 351.33 грн |
| 10+ | 271.72 грн |
| MC78LC33NTRG |
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Виробник: ONSEMI
Category: LDO fixed voltage regulators
Description: IC: voltage regulator; LDO,linear,fixed; 3.3V; 80mA; TSOT23-5; SMD
Type of integrated circuit: voltage regulator
Kind of voltage regulator: fixed; LDO; linear
Voltage drop: 53mV
Output voltage: 3.3V
Output current: 80mA
Case: TSOT23-5
Mounting: SMD
Manufacturer series: MC78LC00
Kind of package: reel; tape
Operating temperature: -40...85°C
Tolerance: ±2.5%
Number of channels: 1
Input voltage: 4.3...12V
Category: LDO fixed voltage regulators
Description: IC: voltage regulator; LDO,linear,fixed; 3.3V; 80mA; TSOT23-5; SMD
Type of integrated circuit: voltage regulator
Kind of voltage regulator: fixed; LDO; linear
Voltage drop: 53mV
Output voltage: 3.3V
Output current: 80mA
Case: TSOT23-5
Mounting: SMD
Manufacturer series: MC78LC00
Kind of package: reel; tape
Operating temperature: -40...85°C
Tolerance: ±2.5%
Number of channels: 1
Input voltage: 4.3...12V
на замовлення 2906 шт:
термін постачання 14-30 дні (днів)
| Кількість | Ціна без ПДВ |
|---|---|
| 20+ | 23.48 грн |
| MC78LC50NTRG |
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Виробник: ONSEMI
Category: LDO fixed voltage regulators
Description: IC: voltage regulator; LDO,linear,fixed; 5V; 0.1A; TSOP5; SMD; Ch: 1
Type of integrated circuit: voltage regulator
Kind of voltage regulator: fixed; LDO; linear
Voltage drop: 38mV
Output voltage: 5V
Output current: 0.1A
Case: TSOP5
Mounting: SMD
Manufacturer series: MC78LC00
Kind of package: reel; tape
Operating temperature: -40...85°C
Tolerance: ±2.5%
Number of channels: 1
Input voltage: 6...12V
Category: LDO fixed voltage regulators
Description: IC: voltage regulator; LDO,linear,fixed; 5V; 0.1A; TSOP5; SMD; Ch: 1
Type of integrated circuit: voltage regulator
Kind of voltage regulator: fixed; LDO; linear
Voltage drop: 38mV
Output voltage: 5V
Output current: 0.1A
Case: TSOP5
Mounting: SMD
Manufacturer series: MC78LC00
Kind of package: reel; tape
Operating temperature: -40...85°C
Tolerance: ±2.5%
Number of channels: 1
Input voltage: 6...12V
на замовлення 2880 шт:
термін постачання 14-30 дні (днів)
| Кількість | Ціна без ПДВ |
|---|---|
| 28+ | 16.26 грн |
| 36+ | 11.74 грн |
| 41+ | 10.40 грн |
| 47+ | 9.06 грн |
| 100+ | 7.38 грн |
| 250+ | 6.46 грн |
| 500+ | 5.87 грн |
| 1000+ | 5.28 грн |
| FAN53601UC182X |
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Виробник: ONSEMI
Category: Voltage regulators - DC/DC circuits
Description: PMIC; DC/DC converter; WLCSP6; SMD; reel,tape
Type of integrated circuit: PMIC
Kind of integrated circuit: DC/DC converter
Case: WLCSP6
Mounting: SMD
Kind of package: reel; tape
Category: Voltage regulators - DC/DC circuits
Description: PMIC; DC/DC converter; WLCSP6; SMD; reel,tape
Type of integrated circuit: PMIC
Kind of integrated circuit: DC/DC converter
Case: WLCSP6
Mounting: SMD
Kind of package: reel; tape
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| FAN53611AUC18X |
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Виробник: ONSEMI
Category: Voltage regulators - DC/DC circuits
Description: PMIC; DC/DC converter; WLCSP6; SMD; reel,tape
Type of integrated circuit: PMIC
Kind of integrated circuit: DC/DC converter
Case: WLCSP6
Mounting: SMD
Kind of package: reel; tape
Category: Voltage regulators - DC/DC circuits
Description: PMIC; DC/DC converter; WLCSP6; SMD; reel,tape
Type of integrated circuit: PMIC
Kind of integrated circuit: DC/DC converter
Case: WLCSP6
Mounting: SMD
Kind of package: reel; tape
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| FGY40T120SMD |
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Виробник: ONSEMI
Category: THT IGBT transistors
Description: Transistor: IGBT; 1.2kV; 40A; 441W; TO247H03
Type of transistor: IGBT
Collector-emitter voltage: 1.2kV
Collector current: 40A
Power dissipation: 441W
Case: TO247H03
Gate-emitter voltage: ±25V
Pulsed collector current: 160A
Mounting: THT
Gate charge: 0.37µC
Kind of package: tube
Features of semiconductor devices: integrated anti-parallel diode
Category: THT IGBT transistors
Description: Transistor: IGBT; 1.2kV; 40A; 441W; TO247H03
Type of transistor: IGBT
Collector-emitter voltage: 1.2kV
Collector current: 40A
Power dissipation: 441W
Case: TO247H03
Gate-emitter voltage: ±25V
Pulsed collector current: 160A
Mounting: THT
Gate charge: 0.37µC
Kind of package: tube
Features of semiconductor devices: integrated anti-parallel diode
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Мінімальне замовлення: 450 шт
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| FGHL40T120RWD |
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Виробник: ONSEMI
Category: THT IGBT transistors
Description: Transistor: IGBT; 1.2kV; 40A; 300W; TO247-3
Type of transistor: IGBT
Collector-emitter voltage: 1.2kV
Collector current: 40A
Power dissipation: 300W
Case: TO247-3
Gate-emitter voltage: ±20V
Pulsed collector current: 120A
Mounting: THT
Gate charge: 174nC
Kind of package: tube
Category: THT IGBT transistors
Description: Transistor: IGBT; 1.2kV; 40A; 300W; TO247-3
Type of transistor: IGBT
Collector-emitter voltage: 1.2kV
Collector current: 40A
Power dissipation: 300W
Case: TO247-3
Gate-emitter voltage: ±20V
Pulsed collector current: 120A
Mounting: THT
Gate charge: 174nC
Kind of package: tube
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| FGY140T120SWD |
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Виробник: ONSEMI
Category: THT IGBT transistors
Description: Transistor: IGBT; 1.2kV; 140A; 576W; TO247-3
Type of transistor: IGBT
Collector-emitter voltage: 1.2kV
Collector current: 140A
Power dissipation: 576W
Case: TO247-3
Gate-emitter voltage: ±20V
Pulsed collector current: 560A
Mounting: THT
Gate charge: 415.4nC
Kind of package: tube
Category: THT IGBT transistors
Description: Transistor: IGBT; 1.2kV; 140A; 576W; TO247-3
Type of transistor: IGBT
Collector-emitter voltage: 1.2kV
Collector current: 140A
Power dissipation: 576W
Case: TO247-3
Gate-emitter voltage: ±20V
Pulsed collector current: 560A
Mounting: THT
Gate charge: 415.4nC
Kind of package: tube
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| FGH4L40T120LQD |
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Виробник: ONSEMI
Category: THT IGBT transistors
Description: Transistor: IGBT; 1.2kV; 40A; 153W; TO247-4
Type of transistor: IGBT
Collector-emitter voltage: 1.2kV
Collector current: 40A
Power dissipation: 153W
Case: TO247-4
Gate-emitter voltage: ±20V
Pulsed collector current: 160A
Mounting: THT
Gate charge: 227nC
Kind of package: tube
Features of semiconductor devices: Kelvin terminal
Category: THT IGBT transistors
Description: Transistor: IGBT; 1.2kV; 40A; 153W; TO247-4
Type of transistor: IGBT
Collector-emitter voltage: 1.2kV
Collector current: 40A
Power dissipation: 153W
Case: TO247-4
Gate-emitter voltage: ±20V
Pulsed collector current: 160A
Mounting: THT
Gate charge: 227nC
Kind of package: tube
Features of semiconductor devices: Kelvin terminal
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| AFGHL40T120RWD |
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Виробник: ONSEMI
Category: THT IGBT transistors
Description: Transistor: IGBT; 1.2kV; 40A; 326W; TO247-3
Type of transistor: IGBT
Collector-emitter voltage: 1.2kV
Collector current: 40A
Power dissipation: 326W
Case: TO247-3
Gate-emitter voltage: ±20V
Pulsed collector current: 120A
Mounting: THT
Gate charge: 170nC
Kind of package: tube
Category: THT IGBT transistors
Description: Transistor: IGBT; 1.2kV; 40A; 326W; TO247-3
Type of transistor: IGBT
Collector-emitter voltage: 1.2kV
Collector current: 40A
Power dissipation: 326W
Case: TO247-3
Gate-emitter voltage: ±20V
Pulsed collector current: 120A
Mounting: THT
Gate charge: 170nC
Kind of package: tube
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| NSPM5131MUTBG |
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Виробник: ONSEMI
Category: Unidirectional TVS SMD diodes
Description: Diode: TVS; 16.5V; uDFN6; reel,tape
Case: uDFN6
Mounting: SMD
Breakdown voltage: 16.5V
Max. off-state voltage: 13.5V
Kind of package: reel; tape
Type of diode: TVS
Category: Unidirectional TVS SMD diodes
Description: Diode: TVS; 16.5V; uDFN6; reel,tape
Case: uDFN6
Mounting: SMD
Breakdown voltage: 16.5V
Max. off-state voltage: 13.5V
Kind of package: reel; tape
Type of diode: TVS
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| 2N6284G |
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Виробник: ONSEMI
Category: NPN THT Darlington transistors
Description: Transistor: NPN; bipolar; Darlington; 100V; 20A; 160W; TO3
Type of transistor: NPN
Polarisation: bipolar
Kind of transistor: Darlington
Collector-emitter voltage: 100V
Collector current: 20A
Power dissipation: 160W
Case: TO3
Current gain: 100...18000
Mounting: THT
Kind of package: in-tray
Category: NPN THT Darlington transistors
Description: Transistor: NPN; bipolar; Darlington; 100V; 20A; 160W; TO3
Type of transistor: NPN
Polarisation: bipolar
Kind of transistor: Darlington
Collector-emitter voltage: 100V
Collector current: 20A
Power dissipation: 160W
Case: TO3
Current gain: 100...18000
Mounting: THT
Kind of package: in-tray
на замовлення 116 шт:
термін постачання 14-30 дні (днів)
| Кількість | Ціна без ПДВ |
|---|---|
| 2+ | 422.68 грн |
| 10+ | 265.01 грн |
| 100+ | 262.50 грн |
| 2N6292G |
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Виробник: ONSEMI
Category: NPN THT transistors
Description: Transistor: NPN; bipolar; 80V; 7A; 40W; TO220AB
Type of transistor: NPN
Polarisation: bipolar
Collector-emitter voltage: 80V
Collector current: 7A
Power dissipation: 40W
Case: TO220AB
Mounting: THT
Kind of package: tube
Frequency: 4MHz
Category: NPN THT transistors
Description: Transistor: NPN; bipolar; 80V; 7A; 40W; TO220AB
Type of transistor: NPN
Polarisation: bipolar
Collector-emitter voltage: 80V
Collector current: 7A
Power dissipation: 40W
Case: TO220AB
Mounting: THT
Kind of package: tube
Frequency: 4MHz
на замовлення 960 шт:
термін постачання 14-30 дні (днів)
| Кількість | Ціна без ПДВ |
|---|---|
| 5+ | 99.35 грн |
| 6+ | 72.12 грн |
| 10+ | 61.05 грн |
| 50+ | 40.00 грн |
| 100+ | 37.74 грн |
| NDT2955 |
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Виробник: ONSEMI
Category: SMD P channel transistors
Description: Transistor: P-MOSFET; unipolar; -60V; -2.5A; 3W; SOT223
Type of transistor: P-MOSFET
Polarisation: unipolar
Drain-source voltage: -60V
Drain current: -2.5A
Power dissipation: 3W
Case: SOT223
On-state resistance: 0.3Ω
Mounting: SMD
Kind of package: reel; tape
Kind of channel: enhancement
Gate-source voltage: ±20V
Category: SMD P channel transistors
Description: Transistor: P-MOSFET; unipolar; -60V; -2.5A; 3W; SOT223
Type of transistor: P-MOSFET
Polarisation: unipolar
Drain-source voltage: -60V
Drain current: -2.5A
Power dissipation: 3W
Case: SOT223
On-state resistance: 0.3Ω
Mounting: SMD
Kind of package: reel; tape
Kind of channel: enhancement
Gate-source voltage: ±20V
на замовлення 7173 шт:
термін постачання 14-30 дні (днів)
| Кількість | Ціна без ПДВ |
|---|---|
| 6+ | 75.87 грн |
| 10+ | 49.31 грн |
| 50+ | 33.80 грн |
| 100+ | 28.60 грн |
| 250+ | 23.23 грн |
| 500+ | 20.04 грн |
| 1000+ | 17.53 грн |
| 2000+ | 15.77 грн |
| NTF2955T1G |
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Виробник: ONSEMI
Category: SMD P channel transistors
Description: Transistor: P-MOSFET; unipolar; -60V; -2A; 2.3W; SOT223
Type of transistor: P-MOSFET
Polarisation: unipolar
Drain-source voltage: -60V
Drain current: -2A
Power dissipation: 2.3W
Case: SOT223
Gate-source voltage: ±20V
On-state resistance: 0.185Ω
Mounting: SMD
Kind of package: reel; tape
Kind of channel: enhancement
Category: SMD P channel transistors
Description: Transistor: P-MOSFET; unipolar; -60V; -2A; 2.3W; SOT223
Type of transistor: P-MOSFET
Polarisation: unipolar
Drain-source voltage: -60V
Drain current: -2A
Power dissipation: 2.3W
Case: SOT223
Gate-source voltage: ±20V
On-state resistance: 0.185Ω
Mounting: SMD
Kind of package: reel; tape
Kind of channel: enhancement
на замовлення 418 шт:
термін постачання 14-30 дні (днів)
| Кількість | Ціна без ПДВ |
|---|---|
| 4+ | 112.90 грн |
| 5+ | 97.28 грн |
| 10+ | 74.56 грн |
| 20+ | 65.08 грн |
| 50+ | 54.26 грн |
| 100+ | 47.55 грн |
| 200+ | 42.02 грн |
| NVF2955T1G |
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Виробник: ONSEMI
Category: SMD P channel transistors
Description: Transistor: P-MOSFET; unipolar; -60V; -2.6A; 2.3W; SOT223
Mounting: SMD
Power dissipation: 2.3W
Gate charge: 14.3nC
Polarisation: unipolar
Drain current: -2.6A
Kind of channel: enhancement
Drain-source voltage: -60V
Type of transistor: P-MOSFET
Gate-source voltage: ±20V
Kind of package: reel; tape
Case: SOT223
On-state resistance: 154mΩ
Category: SMD P channel transistors
Description: Transistor: P-MOSFET; unipolar; -60V; -2.6A; 2.3W; SOT223
Mounting: SMD
Power dissipation: 2.3W
Gate charge: 14.3nC
Polarisation: unipolar
Drain current: -2.6A
Kind of channel: enhancement
Drain-source voltage: -60V
Type of transistor: P-MOSFET
Gate-source voltage: ±20V
Kind of package: reel; tape
Case: SOT223
On-state resistance: 154mΩ
на замовлення 635 шт:
термін постачання 14-30 дні (днів)
| Кількість | Ціна без ПДВ |
|---|---|
| 6+ | 84.90 грн |
| 10+ | 62.06 грн |
| 25+ | 51.16 грн |
| MJD2955G |
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Виробник: ONSEMI
Category: PNP SMD transistors
Description: Transistor: PNP; bipolar; 60V; 10A; 20W; DPAK
Mounting: SMD
Collector-emitter voltage: 60V
Power dissipation: 20W
Polarisation: bipolar
Type of transistor: PNP
Current gain: 20...100
Kind of package: tube
Case: DPAK
Frequency: 2MHz
Collector current: 10A
Category: PNP SMD transistors
Description: Transistor: PNP; bipolar; 60V; 10A; 20W; DPAK
Mounting: SMD
Collector-emitter voltage: 60V
Power dissipation: 20W
Polarisation: bipolar
Type of transistor: PNP
Current gain: 20...100
Kind of package: tube
Case: DPAK
Frequency: 2MHz
Collector current: 10A
на замовлення 21 шт:
термін постачання 14-30 дні (днів)
| Кількість | Ціна без ПДВ |
|---|---|
| 6+ | 87.61 грн |
| 11+ | 38.66 грн |
| MJE2955TG |
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Виробник: ONSEMI
Category: PNP THT transistors
Description: Transistor: PNP; bipolar; 60V; 10A; 125W; TO220AB
Type of transistor: PNP
Polarisation: bipolar
Collector-emitter voltage: 60V
Collector current: 10A
Power dissipation: 125W
Case: TO220AB
Mounting: THT
Kind of package: tube
Frequency: 2MHz
Current gain: 20...100
Category: PNP THT transistors
Description: Transistor: PNP; bipolar; 60V; 10A; 125W; TO220AB
Type of transistor: PNP
Polarisation: bipolar
Collector-emitter voltage: 60V
Collector current: 10A
Power dissipation: 125W
Case: TO220AB
Mounting: THT
Kind of package: tube
Frequency: 2MHz
Current gain: 20...100
на замовлення 103 шт:
термін постачання 14-30 дні (днів)
| Кількість | Ціна без ПДВ |
|---|---|
| 5+ | 98.44 грн |
| 10+ | 45.37 грн |
| 50+ | 37.24 грн |
| SVD2955T4G |
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Виробник: ONSEMI
Category: SMD P channel transistors
Description: Transistor: P-MOSFET; unipolar; -60V; -12A; Idm: -18A; 55W; DPAK
Mounting: SMD
Pulsed drain current: -18A
Power dissipation: 55W
Gate charge: 15nC
Polarisation: unipolar
Drain current: -12A
Kind of channel: enhancement
Drain-source voltage: -60V
Type of transistor: P-MOSFET
Gate-source voltage: ±20V
Kind of package: reel; tape
Case: DPAK
On-state resistance: 0.18Ω
Category: SMD P channel transistors
Description: Transistor: P-MOSFET; unipolar; -60V; -12A; Idm: -18A; 55W; DPAK
Mounting: SMD
Pulsed drain current: -18A
Power dissipation: 55W
Gate charge: 15nC
Polarisation: unipolar
Drain current: -12A
Kind of channel: enhancement
Drain-source voltage: -60V
Type of transistor: P-MOSFET
Gate-source voltage: ±20V
Kind of package: reel; tape
Case: DPAK
On-state resistance: 0.18Ω
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| MJD2955T4G |
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Виробник: ONSEMI
Category: PNP SMD transistors
Description: Transistor: PNP; bipolar; 60V; 10A; 20W; DPAK
Mounting: SMD
Collector-emitter voltage: 60V
Power dissipation: 20W
Polarisation: bipolar
Type of transistor: PNP
Current gain: 20...100
Kind of package: reel; tape
Case: DPAK
Frequency: 2MHz
Collector current: 10A
Category: PNP SMD transistors
Description: Transistor: PNP; bipolar; 60V; 10A; 20W; DPAK
Mounting: SMD
Collector-emitter voltage: 60V
Power dissipation: 20W
Polarisation: bipolar
Type of transistor: PNP
Current gain: 20...100
Kind of package: reel; tape
Case: DPAK
Frequency: 2MHz
Collector current: 10A
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| MJF2955G |
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Виробник: ONSEMI
Category: PNP THT transistors
Description: Transistor: PNP; bipolar; 90V; 10A; 30W; TO220FP
Mounting: THT
Collector-emitter voltage: 90V
Power dissipation: 30W
Polarisation: bipolar
Type of transistor: PNP
Current gain: 20...100
Kind of package: tube
Case: TO220FP
Frequency: 2MHz
Collector current: 10A
Category: PNP THT transistors
Description: Transistor: PNP; bipolar; 90V; 10A; 30W; TO220FP
Mounting: THT
Collector-emitter voltage: 90V
Power dissipation: 30W
Polarisation: bipolar
Type of transistor: PNP
Current gain: 20...100
Kind of package: tube
Case: TO220FP
Frequency: 2MHz
Collector current: 10A
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| NCV8535MN500R2G |
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Виробник: ONSEMI
Category: LDO fixed voltage regulators
Description: IC: voltage regulator; LDO,linear,fixed; 5V; 0.5A; DFN10; SMD; Ch: 1
Kind of voltage regulator: fixed; LDO; linear
Output current: 0.5A
Type of integrated circuit: voltage regulator
Application: automotive industry
Output voltage: 5V
Kind of package: reel; tape
Case: DFN10
Number of channels: 1
Mounting: SMD
Category: LDO fixed voltage regulators
Description: IC: voltage regulator; LDO,linear,fixed; 5V; 0.5A; DFN10; SMD; Ch: 1
Kind of voltage regulator: fixed; LDO; linear
Output current: 0.5A
Type of integrated circuit: voltage regulator
Application: automotive industry
Output voltage: 5V
Kind of package: reel; tape
Case: DFN10
Number of channels: 1
Mounting: SMD
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| NCV8535MN330R2G |
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Виробник: ONSEMI
Category: LDO fixed voltage regulators
Description: IC: voltage regulator; LDO,linear,fixed; 3.3V; 0.5A; DFN10; SMD
Kind of voltage regulator: fixed; LDO; linear
Output current: 0.5A
Type of integrated circuit: voltage regulator
Application: automotive industry
Output voltage: 3.3V
Kind of package: reel; tape
Case: DFN10
Number of channels: 1
Mounting: SMD
Category: LDO fixed voltage regulators
Description: IC: voltage regulator; LDO,linear,fixed; 3.3V; 0.5A; DFN10; SMD
Kind of voltage regulator: fixed; LDO; linear
Output current: 0.5A
Type of integrated circuit: voltage regulator
Application: automotive industry
Output voltage: 3.3V
Kind of package: reel; tape
Case: DFN10
Number of channels: 1
Mounting: SMD
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| MM74HCT14M |
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Виробник: ONSEMI
Category: Gates, inverters
Description: IC: digital; NOT; Ch: 6; IN: 1; CMOS; SMD; SO14; 4.5÷5.5VDC; -40÷85°C
Type of integrated circuit: digital
Number of channels: hex; 6
Number of inputs: 1
Mounting: SMD
Case: SO14
Operating temperature: -40...85°C
Quiescent current: 10µA
Family: HCT
Supply voltage: 4.5...5.5V DC
Technology: CMOS
Kind of input: with Schmitt trigger
Kind of package: tube
Kind of gate: NOT
Category: Gates, inverters
Description: IC: digital; NOT; Ch: 6; IN: 1; CMOS; SMD; SO14; 4.5÷5.5VDC; -40÷85°C
Type of integrated circuit: digital
Number of channels: hex; 6
Number of inputs: 1
Mounting: SMD
Case: SO14
Operating temperature: -40...85°C
Quiescent current: 10µA
Family: HCT
Supply voltage: 4.5...5.5V DC
Technology: CMOS
Kind of input: with Schmitt trigger
Kind of package: tube
Kind of gate: NOT
на замовлення 84 шт:
термін постачання 14-30 дні (днів)
| Кількість | Ціна без ПДВ |
|---|---|
| 14+ | 32.51 грн |
| 20+ | 21.22 грн |
| 25+ | 19.04 грн |
| 55+ | 17.70 грн |
| MC74HCT14ADG |
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Виробник: ONSEMI
Category: Gates, inverters
Description: IC: digital; NOT; Ch: 6; IN: 1; CMOS; SMD; SO14; 4.5÷5.5VDC; -55÷125°C
Type of integrated circuit: digital
Kind of gate: NOT
Number of channels: hex; 6
Number of inputs: 1
Technology: CMOS
Mounting: SMD
Case: SO14
Supply voltage: 4.5...5.5V DC
Operating temperature: -55...125°C
Kind of package: tube
Delay time: 32ns
Family: HCT
Kind of input: with Schmitt trigger
Category: Gates, inverters
Description: IC: digital; NOT; Ch: 6; IN: 1; CMOS; SMD; SO14; 4.5÷5.5VDC; -55÷125°C
Type of integrated circuit: digital
Kind of gate: NOT
Number of channels: hex; 6
Number of inputs: 1
Technology: CMOS
Mounting: SMD
Case: SO14
Supply voltage: 4.5...5.5V DC
Operating temperature: -55...125°C
Kind of package: tube
Delay time: 32ns
Family: HCT
Kind of input: with Schmitt trigger
на замовлення 53 шт:
термін постачання 14-30 дні (днів)
| Кількість | Ціна без ПДВ |
|---|---|
| 23+ | 19.87 грн |
| 26+ | 16.52 грн |
| MM74HCT14MX |
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Виробник: ONSEMI
Category: Gates, inverters
Description: IC: digital; NOT; Ch: 6; IN: 1; CMOS; SMD; SO14; 4.5÷5.5VDC; -40÷85°C
Type of integrated circuit: digital
Number of channels: hex; 6
Number of inputs: 1
Mounting: SMD
Case: SO14
Operating temperature: -40...85°C
Family: HCT
Supply voltage: 4.5...5.5V DC
Technology: CMOS
Kind of input: with Schmitt trigger
Kind of package: reel; tape
Delay time: 13ns
Kind of gate: NOT
Category: Gates, inverters
Description: IC: digital; NOT; Ch: 6; IN: 1; CMOS; SMD; SO14; 4.5÷5.5VDC; -40÷85°C
Type of integrated circuit: digital
Number of channels: hex; 6
Number of inputs: 1
Mounting: SMD
Case: SO14
Operating temperature: -40...85°C
Family: HCT
Supply voltage: 4.5...5.5V DC
Technology: CMOS
Kind of input: with Schmitt trigger
Kind of package: reel; tape
Delay time: 13ns
Kind of gate: NOT
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| MC74HCT14ADR2G |
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Виробник: ONSEMI
Category: Gates, inverters
Description: IC: digital; NOT; Ch: 6; IN: 1; CMOS; SMD; SO14; 4.5÷5.5VDC; -55÷125°C
Type of integrated circuit: digital
Number of channels: hex; 6
Number of inputs: 1
Mounting: SMD
Case: SO14
Operating temperature: -55...125°C
Family: HCT
Supply voltage: 4.5...5.5V DC
Technology: CMOS
Kind of input: with Schmitt trigger
Kind of package: reel; tape
Delay time: 32ns
Kind of gate: NOT
Category: Gates, inverters
Description: IC: digital; NOT; Ch: 6; IN: 1; CMOS; SMD; SO14; 4.5÷5.5VDC; -55÷125°C
Type of integrated circuit: digital
Number of channels: hex; 6
Number of inputs: 1
Mounting: SMD
Case: SO14
Operating temperature: -55...125°C
Family: HCT
Supply voltage: 4.5...5.5V DC
Technology: CMOS
Kind of input: with Schmitt trigger
Kind of package: reel; tape
Delay time: 32ns
Kind of gate: NOT
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Мінімальне замовлення: 2500 шт
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| MC74HCT14ADTR2G |
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Виробник: ONSEMI
Category: Gates, inverters
Description: IC: digital; NOT; Ch: 6; IN: 1; CMOS; SMD; TSSOP14; 4.5÷5.5VDC; 32ns
Type of integrated circuit: digital
Number of channels: hex; 6
Number of inputs: 1
Mounting: SMD
Case: TSSOP14
Operating temperature: -55...125°C
Family: HCT
Supply voltage: 4.5...5.5V DC
Technology: CMOS
Kind of input: with Schmitt trigger
Kind of package: reel; tape
Delay time: 32ns
Kind of gate: NOT
Category: Gates, inverters
Description: IC: digital; NOT; Ch: 6; IN: 1; CMOS; SMD; TSSOP14; 4.5÷5.5VDC; 32ns
Type of integrated circuit: digital
Number of channels: hex; 6
Number of inputs: 1
Mounting: SMD
Case: TSSOP14
Operating temperature: -55...125°C
Family: HCT
Supply voltage: 4.5...5.5V DC
Technology: CMOS
Kind of input: with Schmitt trigger
Kind of package: reel; tape
Delay time: 32ns
Kind of gate: NOT
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| MM74HCT14MTCX |
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Виробник: ONSEMI
Category: Gates, inverters
Description: IC: digital; NOT; Ch: 6; IN: 1; CMOS; SMD; TSSOP14; 4.5÷5.5VDC; 13ns
Type of integrated circuit: digital
Number of channels: hex; 6
Number of inputs: 1
Mounting: SMD
Case: TSSOP14
Operating temperature: -40...85°C
Family: HCT
Supply voltage: 4.5...5.5V DC
Technology: CMOS
Kind of input: with Schmitt trigger
Kind of package: reel; tape
Delay time: 13ns
Kind of gate: NOT
Category: Gates, inverters
Description: IC: digital; NOT; Ch: 6; IN: 1; CMOS; SMD; TSSOP14; 4.5÷5.5VDC; 13ns
Type of integrated circuit: digital
Number of channels: hex; 6
Number of inputs: 1
Mounting: SMD
Case: TSSOP14
Operating temperature: -40...85°C
Family: HCT
Supply voltage: 4.5...5.5V DC
Technology: CMOS
Kind of input: with Schmitt trigger
Kind of package: reel; tape
Delay time: 13ns
Kind of gate: NOT
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Мінімальне замовлення: 2500 шт
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| MC33164D-5R2G |
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Виробник: ONSEMI
Category: Supervisor circuits
Description: IC: supervisor circuit; open drain; Active logical level: low
Mounting: SMD
Supply voltage: 1...10V
Active logical level: low
Type of integrated circuit: supervisor circuit
Operating temperature: -40...125°C
Threshold on-voltage: 5V
Case: SOIC8
Kind of integrated circuit: power on reset monitor (PoR); voltage detector
Number of channels: 1
Kind of RESET output: open drain
Category: Supervisor circuits
Description: IC: supervisor circuit; open drain; Active logical level: low
Mounting: SMD
Supply voltage: 1...10V
Active logical level: low
Type of integrated circuit: supervisor circuit
Operating temperature: -40...125°C
Threshold on-voltage: 5V
Case: SOIC8
Kind of integrated circuit: power on reset monitor (PoR); voltage detector
Number of channels: 1
Kind of RESET output: open drain
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| MC33164D-3R2G |
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Виробник: ONSEMI
Category: Supervisor circuits
Description: IC: supervisor circuit; open drain; Active logical level: low
Mounting: SMD
Supply voltage: 1...10V
Active logical level: low
Type of integrated circuit: supervisor circuit
Operating temperature: -40...125°C
Threshold on-voltage: 3V
Case: SOIC8
Kind of integrated circuit: power on reset monitor (PoR); voltage detector
Number of channels: 1
Kind of RESET output: open drain
Category: Supervisor circuits
Description: IC: supervisor circuit; open drain; Active logical level: low
Mounting: SMD
Supply voltage: 1...10V
Active logical level: low
Type of integrated circuit: supervisor circuit
Operating temperature: -40...125°C
Threshold on-voltage: 3V
Case: SOIC8
Kind of integrated circuit: power on reset monitor (PoR); voltage detector
Number of channels: 1
Kind of RESET output: open drain
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| MC33164DM-3R2G |
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Виробник: ONSEMI
Category: Supervisor circuits
Description: IC: supervisor circuit; open drain; Active logical level: low
Mounting: SMD
Supply voltage: 1...10V
Active logical level: low
Type of integrated circuit: supervisor circuit
Operating temperature: -40...125°C
Threshold on-voltage: 3V
Case: TSSOP8
Kind of integrated circuit: power on reset monitor (PoR); voltage detector
Number of channels: 1
Kind of RESET output: open drain
Category: Supervisor circuits
Description: IC: supervisor circuit; open drain; Active logical level: low
Mounting: SMD
Supply voltage: 1...10V
Active logical level: low
Type of integrated circuit: supervisor circuit
Operating temperature: -40...125°C
Threshold on-voltage: 3V
Case: TSSOP8
Kind of integrated circuit: power on reset monitor (PoR); voltage detector
Number of channels: 1
Kind of RESET output: open drain
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Мінімальне замовлення: 4000 шт
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| MC33164DM-5R2G |
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Виробник: ONSEMI
Category: Supervisor circuits
Description: IC: supervisor circuit; open drain; Active logical level: low
Mounting: SMD
Supply voltage: 1...10V
Active logical level: low
Type of integrated circuit: supervisor circuit
Operating temperature: -40...125°C
Threshold on-voltage: 5V
Case: TSSOP8
Kind of integrated circuit: power on reset monitor (PoR); voltage detector
Number of channels: 1
Kind of RESET output: open drain
Category: Supervisor circuits
Description: IC: supervisor circuit; open drain; Active logical level: low
Mounting: SMD
Supply voltage: 1...10V
Active logical level: low
Type of integrated circuit: supervisor circuit
Operating temperature: -40...125°C
Threshold on-voltage: 5V
Case: TSSOP8
Kind of integrated circuit: power on reset monitor (PoR); voltage detector
Number of channels: 1
Kind of RESET output: open drain
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Мінімальне замовлення: 4000 шт
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| MC34164D-5G |
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Виробник: ONSEMI
Category: Supervisor circuits
Description: IC: supervisor circuit; open drain; Active logical level: low
Supply voltage: 10V
Active logical level: low
Type of integrated circuit: supervisor circuit
Operating temperature: 0...70°C
Threshold on-voltage: 5V
Case: SOIC8
Kind of integrated circuit: power on reset monitor (PoR); voltage detector
Number of channels: 1
Kind of RESET output: open drain
Mounting: SMD
Category: Supervisor circuits
Description: IC: supervisor circuit; open drain; Active logical level: low
Supply voltage: 10V
Active logical level: low
Type of integrated circuit: supervisor circuit
Operating temperature: 0...70°C
Threshold on-voltage: 5V
Case: SOIC8
Kind of integrated circuit: power on reset monitor (PoR); voltage detector
Number of channels: 1
Kind of RESET output: open drain
Mounting: SMD
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