| Фото | Назва | Виробник | Інформація | Доступність | Ціна без ПДВ | ||||||||||||||||||
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| FGHL40T120RWD | ONSEMI |
Category: THT IGBT transistorsDescription: Transistor: IGBT; 1.2kV; 40A; 300W; TO247-3 Type of transistor: IGBT Collector-emitter voltage: 1.2kV Collector current: 40A Power dissipation: 300W Case: TO247-3 Gate-emitter voltage: ±20V Pulsed collector current: 120A Mounting: THT Gate charge: 174nC Kind of package: tube |
товару немає в наявності |
В кошику од. на суму грн. | |||||||||||||||||||
| FGY140T120SWD | ONSEMI |
Category: THT IGBT transistorsDescription: Transistor: IGBT; 1.2kV; 140A; 576W; TO247-3 Type of transistor: IGBT Collector-emitter voltage: 1.2kV Collector current: 140A Power dissipation: 576W Case: TO247-3 Gate-emitter voltage: ±20V Pulsed collector current: 560A Mounting: THT Gate charge: 415.4nC Kind of package: tube |
товару немає в наявності |
В кошику од. на суму грн. | |||||||||||||||||||
| FGH4L40T120LQD | ONSEMI |
Category: THT IGBT transistorsDescription: Transistor: IGBT; 1.2kV; 40A; 153W; TO247-4 Type of transistor: IGBT Collector-emitter voltage: 1.2kV Collector current: 40A Power dissipation: 153W Case: TO247-4 Gate-emitter voltage: ±20V Pulsed collector current: 160A Mounting: THT Gate charge: 227nC Kind of package: tube Features of semiconductor devices: Kelvin terminal |
товару немає в наявності |
В кошику од. на суму грн. | |||||||||||||||||||
| AFGHL40T120RWD | ONSEMI |
Category: THT IGBT transistorsDescription: Transistor: IGBT; 1.2kV; 40A; 326W; TO247-3 Type of transistor: IGBT Collector-emitter voltage: 1.2kV Collector current: 40A Power dissipation: 326W Case: TO247-3 Gate-emitter voltage: ±20V Pulsed collector current: 120A Mounting: THT Gate charge: 170nC Kind of package: tube |
товару немає в наявності |
В кошику од. на суму грн. | |||||||||||||||||||
| NSPM5131MUTBG | ONSEMI |
Category: Unidirectional TVS SMD diodesDescription: Diode: TVS; 16.5V; uDFN6; reel,tape Case: uDFN6 Mounting: SMD Breakdown voltage: 16.5V Max. off-state voltage: 13.5V Kind of package: reel; tape Type of diode: TVS |
товару немає в наявності |
В кошику од. на суму грн. | |||||||||||||||||||
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2N6284G | ONSEMI |
Category: NPN THT Darlington transistorsDescription: Transistor: NPN; bipolar; Darlington; 100V; 20A; 160W; TO3 Type of transistor: NPN Polarisation: bipolar Power dissipation: 160W Case: TO3 Mounting: THT Current gain: 100...18000 Kind of package: in-tray Collector current: 20A Collector-emitter voltage: 100V Kind of transistor: Darlington |
на замовлення 123 шт: термін постачання 14-30 дні (днів) |
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2N6292G | ONSEMI |
Category: NPN THT transistorsDescription: Transistor: NPN; bipolar; 80V; 7A; 40W; TO220AB Type of transistor: NPN Polarisation: bipolar Power dissipation: 40W Case: TO220AB Mounting: THT Kind of package: tube Frequency: 4MHz Collector current: 7A Collector-emitter voltage: 80V |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||||||||||||
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NDT2955 | ONSEMI |
Category: SMD P channel transistorsDescription: Transistor: P-MOSFET; unipolar; -60V; -2.5A; 3W; SOT223 Mounting: SMD Case: SOT223 Kind of package: reel; tape Drain current: -2.5A Kind of channel: enhancement Drain-source voltage: -60V Type of transistor: P-MOSFET Gate-source voltage: ±20V On-state resistance: 0.3Ω Power dissipation: 3W Polarisation: unipolar |
на замовлення 3200 шт: термін постачання 14-30 дні (днів) |
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NTF2955T1G | ONSEMI |
Category: SMD P channel transistorsDescription: Transistor: P-MOSFET; unipolar; -60V; -2A; 2.3W; SOT223 On-state resistance: 0.185Ω Mounting: SMD Power dissipation: 2.3W Polarisation: unipolar Drain current: -2A Kind of channel: enhancement Drain-source voltage: -60V Type of transistor: P-MOSFET Gate-source voltage: ±20V Kind of package: reel; tape Case: SOT223 |
на замовлення 418 шт: термін постачання 14-30 дні (днів) |
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NVF2955T1G | ONSEMI |
Category: SMD P channel transistorsDescription: Transistor: P-MOSFET; unipolar; -60V; -2.6A; 2.3W; SOT223 On-state resistance: 154mΩ Mounting: SMD Power dissipation: 2.3W Gate charge: 14.3nC Polarisation: unipolar Drain current: -2.6A Kind of channel: enhancement Drain-source voltage: -60V Type of transistor: P-MOSFET Gate-source voltage: ±20V Kind of package: reel; tape Case: SOT223 |
на замовлення 660 шт: термін постачання 14-30 дні (днів) |
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MJD2955G | ONSEMI |
Category: PNP SMD transistorsDescription: Transistor: PNP; bipolar; 60V; 10A; 20W; DPAK Type of transistor: PNP Polarisation: bipolar Collector-emitter voltage: 60V Collector current: 10A Power dissipation: 20W Case: DPAK Current gain: 20...100 Mounting: SMD Kind of package: tube Frequency: 2MHz |
на замовлення 21 шт: термін постачання 14-30 дні (днів) |
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MJE2955TG | ONSEMI |
Category: PNP THT transistorsDescription: Transistor: PNP; bipolar; 60V; 10A; 125W; TO220AB Type of transistor: PNP Polarisation: bipolar Collector-emitter voltage: 60V Collector current: 10A Power dissipation: 125W Case: TO220AB Current gain: 20...100 Mounting: THT Kind of package: tube Frequency: 2MHz |
на замовлення 107 шт: термін постачання 14-30 дні (днів) |
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SVD2955T4G | ONSEMI |
Category: SMD P channel transistorsDescription: Transistor: P-MOSFET; unipolar; -60V; -12A; Idm: -18A; 55W; DPAK Mounting: SMD Pulsed drain current: -18A Power dissipation: 55W Gate charge: 15nC Polarisation: unipolar Drain current: -12A Kind of channel: enhancement Drain-source voltage: -60V Type of transistor: P-MOSFET Gate-source voltage: ±20V Kind of package: reel; tape Case: DPAK On-state resistance: 0.18Ω |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||||||||||||
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MJD2955T4G | ONSEMI |
Category: PNP SMD transistorsDescription: Transistor: PNP; bipolar; 60V; 10A; 20W; DPAK Type of transistor: PNP Polarisation: bipolar Collector-emitter voltage: 60V Collector current: 10A Power dissipation: 20W Case: DPAK Current gain: 20...100 Mounting: SMD Kind of package: reel; tape Frequency: 2MHz |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||||||||||||
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MJF2955G | ONSEMI |
Category: PNP THT transistorsDescription: Transistor: PNP; bipolar; 90V; 10A; 30W; TO220FP Collector current: 10A Mounting: THT Collector-emitter voltage: 90V Power dissipation: 30W Polarisation: bipolar Type of transistor: PNP Current gain: 20...100 Kind of package: tube Case: TO220FP Frequency: 2MHz |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||||||||||||
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NCV8535MN500R2G | ONSEMI |
Category: LDO fixed voltage regulatorsDescription: IC: voltage regulator; LDO,linear,fixed; 5V; 0.5A; DFN10; SMD; Ch: 1 Kind of voltage regulator: fixed; LDO; linear Output current: 0.5A Type of integrated circuit: voltage regulator Application: automotive industry Output voltage: 5V Kind of package: reel; tape Case: DFN10 Number of channels: 1 Mounting: SMD |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||||||||||||
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NCV8535MN330R2G | ONSEMI |
Category: LDO fixed voltage regulatorsDescription: IC: voltage regulator; LDO,linear,fixed; 3.3V; 0.5A; DFN10; SMD Kind of voltage regulator: fixed; LDO; linear Output current: 0.5A Type of integrated circuit: voltage regulator Application: automotive industry Output voltage: 3.3V Kind of package: reel; tape Case: DFN10 Number of channels: 1 Mounting: SMD |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||||||||||||
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MM74HCT14M | ONSEMI |
Category: Gates, invertersDescription: IC: digital; NOT; Ch: 6; IN: 1; CMOS; SMD; SO14; 4.5÷5.5VDC; -40÷85°C Type of integrated circuit: digital Number of channels: hex; 6 Number of inputs: 1 Mounting: SMD Case: SO14 Operating temperature: -40...85°C Quiescent current: 10µA Family: HCT Supply voltage: 4.5...5.5V DC Technology: CMOS Kind of input: with Schmitt trigger Kind of package: tube Kind of gate: NOT |
на замовлення 86 шт: термін постачання 14-30 дні (днів) |
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MC74HCT14ADG | ONSEMI |
Category: Gates, invertersDescription: IC: digital; NOT; Ch: 6; IN: 1; CMOS; SMD; SO14; 4.5÷5.5VDC; -55÷125°C Type of integrated circuit: digital Number of channels: hex; 6 Number of inputs: 1 Mounting: SMD Case: SO14 Operating temperature: -55...125°C Family: HCT Supply voltage: 4.5...5.5V DC Technology: CMOS Kind of input: with Schmitt trigger Kind of package: tube Delay time: 32ns Kind of gate: NOT |
на замовлення 55 шт: термін постачання 14-30 дні (днів) |
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MM74HCT14MX | ONSEMI |
Category: Gates, invertersDescription: IC: digital; NOT; Ch: 6; IN: 1; CMOS; SMD; SO14; 4.5÷5.5VDC; -40÷85°C Type of integrated circuit: digital Number of channels: hex; 6 Number of inputs: 1 Mounting: SMD Case: SO14 Operating temperature: -40...85°C Family: HCT Supply voltage: 4.5...5.5V DC Technology: CMOS Kind of input: with Schmitt trigger Kind of package: reel; tape Delay time: 13ns Kind of gate: NOT |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||||||||||||
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MC74HCT14ADR2G | ONSEMI |
Category: Gates, invertersDescription: IC: digital; NOT; Ch: 6; IN: 1; CMOS; SMD; SO14; 4.5÷5.5VDC; -55÷125°C Type of integrated circuit: digital Number of channels: hex; 6 Number of inputs: 1 Mounting: SMD Case: SO14 Operating temperature: -55...125°C Family: HCT Supply voltage: 4.5...5.5V DC Technology: CMOS Kind of input: with Schmitt trigger Kind of package: reel; tape Delay time: 32ns Kind of gate: NOT |
товару немає в наявності |
Мінімальне замовлення: 2500 шт В кошику од. на суму грн. | ||||||||||||||||||
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MC74HCT14ADTR2G | ONSEMI |
Category: Gates, invertersDescription: IC: digital; NOT; Ch: 6; IN: 1; CMOS; SMD; TSSOP14; 4.5÷5.5VDC; 32ns Type of integrated circuit: digital Number of channels: hex; 6 Number of inputs: 1 Mounting: SMD Case: TSSOP14 Operating temperature: -55...125°C Family: HCT Supply voltage: 4.5...5.5V DC Technology: CMOS Kind of input: with Schmitt trigger Kind of package: reel; tape Delay time: 32ns Kind of gate: NOT |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||||||||||||
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MM74HCT14MTCX | ONSEMI |
Category: Gates, invertersDescription: IC: digital; NOT; Ch: 6; IN: 1; CMOS; SMD; TSSOP14; 4.5÷5.5VDC; 13ns Type of integrated circuit: digital Number of channels: hex; 6 Number of inputs: 1 Mounting: SMD Case: TSSOP14 Operating temperature: -40...85°C Family: HCT Supply voltage: 4.5...5.5V DC Technology: CMOS Kind of input: with Schmitt trigger Kind of package: reel; tape Delay time: 13ns Kind of gate: NOT |
товару немає в наявності |
Мінімальне замовлення: 2500 шт В кошику од. на суму грн. | ||||||||||||||||||
| MC33164D-5R2G | ONSEMI |
Category: Supervisor circuitsDescription: IC: supervisor circuit; open drain; Active logical level: low Mounting: SMD Supply voltage: 1...10V Active logical level: low Type of integrated circuit: supervisor circuit Operating temperature: -40...125°C Threshold on-voltage: 5V Case: SOIC8 Kind of integrated circuit: power on reset monitor (PoR); voltage detector Number of channels: 1 Kind of RESET output: open drain |
товару немає в наявності |
В кошику од. на суму грн. | |||||||||||||||||||
| MC33164D-3R2G | ONSEMI |
Category: Supervisor circuitsDescription: IC: supervisor circuit; open drain; Active logical level: low Mounting: SMD Supply voltage: 1...10V Active logical level: low Type of integrated circuit: supervisor circuit Operating temperature: -40...125°C Threshold on-voltage: 3V Case: SOIC8 Kind of integrated circuit: power on reset monitor (PoR); voltage detector Number of channels: 1 Kind of RESET output: open drain |
товару немає в наявності |
В кошику од. на суму грн. | |||||||||||||||||||
| MC33164DM-3R2G | ONSEMI |
Category: Supervisor circuitsDescription: IC: supervisor circuit; open drain; Active logical level: low Mounting: SMD Supply voltage: 1...10V Active logical level: low Type of integrated circuit: supervisor circuit Operating temperature: -40...125°C Threshold on-voltage: 3V Case: TSSOP8 Kind of integrated circuit: power on reset monitor (PoR); voltage detector Number of channels: 1 Kind of RESET output: open drain |
товару немає в наявності |
Мінімальне замовлення: 4000 шт В кошику од. на суму грн. | |||||||||||||||||||
| MC33164DM-5R2G | ONSEMI |
Category: Supervisor circuitsDescription: IC: supervisor circuit; open drain; Active logical level: low Mounting: SMD Supply voltage: 1...10V Active logical level: low Type of integrated circuit: supervisor circuit Operating temperature: -40...125°C Threshold on-voltage: 5V Case: TSSOP8 Kind of integrated circuit: power on reset monitor (PoR); voltage detector Number of channels: 1 Kind of RESET output: open drain |
товару немає в наявності |
Мінімальне замовлення: 4000 шт В кошику од. на суму грн. | |||||||||||||||||||
| MC34164D-5G | ONSEMI |
Category: Supervisor circuitsDescription: IC: supervisor circuit; open drain; Active logical level: low Supply voltage: 10V Active logical level: low Type of integrated circuit: supervisor circuit Operating temperature: 0...70°C Threshold on-voltage: 5V Case: SOIC8 Kind of integrated circuit: power on reset monitor (PoR); voltage detector Number of channels: 1 Kind of RESET output: open drain Mounting: SMD |
товару немає в наявності |
В кошику од. на суму грн. | |||||||||||||||||||
| MC34164D-5R2G | ONSEMI |
Category: Supervisor circuitsDescription: IC: supervisor circuit; open drain; Active logical level: low Supply voltage: 10V Active logical level: low Type of integrated circuit: supervisor circuit Operating temperature: 0...70°C Threshold on-voltage: 5V Case: SOIC8 Kind of integrated circuit: power on reset monitor (PoR); voltage detector Number of channels: 1 Kind of RESET output: open drain Mounting: SMD |
товару немає в наявності |
В кошику од. на суму грн. | |||||||||||||||||||
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NCV4949CDR2G | ONSEMI |
Category: LDO fixed voltage regulatorsDescription: IC: voltage regulator; LDO,linear,fixed; 5V; 0.1A; SO8; SMD; Ch: 1 Type of integrated circuit: voltage regulator Kind of voltage regulator: fixed; LDO; linear Output voltage: 5V Output current: 0.1A Case: SO8 Mounting: SMD Kind of package: reel; tape Number of channels: 1 Application: automotive industry |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||||||||||||
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NCV4949CPDR2G | ONSEMI |
Category: LDO fixed voltage regulatorsDescription: IC: voltage regulator; LDO,linear,fixed; 5V; 0.1A; SO8; SMD; Ch: 1 Type of integrated circuit: voltage regulator Kind of voltage regulator: fixed; LDO; linear Output voltage: 5V Output current: 0.1A Case: SO8 Mounting: SMD Kind of package: reel; tape Number of channels: 1 Application: automotive industry |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||||||||||||
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CAT24C16WI-GT3 | ONSEMI |
Category: Serial EEPROM memories - integ. circ.Description: IC: EEPROM memory; 16kbEEPROM; I2C; 2048x8bit; 1.7÷5.5V; 400kHz Kind of package: reel; tape Case: SOIC8 Interface: I2C Operating voltage: 1.7...5.5V Kind of memory: EEPROM Mounting: SMD Access time: 900ns Type of integrated circuit: EEPROM memory Operating temperature: -40...85°C Clock frequency: 400kHz Memory: 16kb EEPROM Kind of interface: serial Memory organisation: 2048x8bit |
на замовлення 324 шт: термін постачання 14-30 дні (днів) |
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| N24C16UDTG | ONSEMI |
Category: Serial EEPROM memories - integ. circ.Description: IC: EEPROM memory; 16kbEEPROM; I2C; 2kx8bit; 1.6÷5.5V; 1MHz; US8 Type of integrated circuit: EEPROM memory Kind of memory: EEPROM Memory: 16kb EEPROM Interface: I2C Memory organisation: 2kx8bit Operating voltage: 1.6...5.5V Clock frequency: 1MHz Mounting: SMD Case: US8 Kind of interface: serial Operating temperature: -40...85°C Access time: 450ns Kind of package: reel; tape |
товару немає в наявності |
Мінімальне замовлення: 3000 шт В кошику од. на суму грн. | |||||||||||||||||||
| N24C16UVTG | ONSEMI |
Category: Serial EEPROM memories - integ. circ.Description: IC: EEPROM memory; I2C; 2kx8bit; US8; serial Type of integrated circuit: EEPROM memory Kind of memory: EEPROM Interface: I2C Memory organisation: 2kx8bit Mounting: SMD Case: US8 Kind of interface: serial Operating temperature: -40...125°C Access time: 450ns |
товару немає в наявності |
Мінімальне замовлення: 3000 шт В кошику од. на суму грн. | |||||||||||||||||||
| NV24C16DTVLT3G | ONSEMI |
Category: Serial EEPROM memories - integ. circ.Description: IC: EEPROM memory; 16kbEEPROM; I2C; 2kx8bit; 1.7÷5.5V; 1MHz; TSSOP8 Type of integrated circuit: EEPROM memory Kind of memory: EEPROM Memory: 16kb EEPROM Interface: I2C Memory organisation: 2kx8bit Operating voltage: 1.7...5.5V Clock frequency: 1MHz Mounting: SMD Case: TSSOP8 Kind of interface: serial Operating temperature: -40...125°C Access time: 450ns Kind of package: reel; tape |
товару немає в наявності |
В кошику од. на суму грн. | |||||||||||||||||||
| NV24C16DWVLT3G | ONSEMI |
Category: Serial EEPROM memories - integ. circ.Description: IC: EEPROM memory; 16kbEEPROM; I2C; 2kx8bit; 1.7÷5.5V; 1MHz; SOIC8 Type of integrated circuit: EEPROM memory Kind of memory: EEPROM Memory: 16kb EEPROM Interface: I2C Memory organisation: 2kx8bit Operating voltage: 1.7...5.5V Clock frequency: 1MHz Mounting: SMD Case: SOIC8 Kind of interface: serial Operating temperature: -40...125°C Access time: 450ns Kind of package: reel; tape |
товару немає в наявності |
Мінімальне замовлення: 3000 шт В кошику од. на суму грн. | |||||||||||||||||||
| NV24C16MUW3VLTBG | ONSEMI |
Category: Serial EEPROM memories - integ. circ.Description: IC: EEPROM memory; 16kbEEPROM; I2C; 2kx8bit; 1.7÷5.5V; 1MHz; uDFN8 Type of integrated circuit: EEPROM memory Kind of memory: EEPROM Memory: 16kb EEPROM Interface: I2C Memory organisation: 2kx8bit Operating voltage: 1.7...5.5V Clock frequency: 1MHz Mounting: SMD Case: uDFN8 Kind of interface: serial Operating temperature: -40...125°C Access time: 450ns Kind of package: reel; tape |
товару немає в наявності |
Мінімальне замовлення: 3000 шт В кошику од. на суму грн. | |||||||||||||||||||
| NV24C16SNVLT3G | ONSEMI |
Category: Serial EEPROM memories - integ. circ.Description: IC: EEPROM memory; 16kbEEPROM; I2C; 2kx8bit; 1.7÷5.5V; 1MHz; TSOP5 Type of integrated circuit: EEPROM memory Kind of memory: EEPROM Memory: 16kb EEPROM Interface: I2C Memory organisation: 2kx8bit Operating voltage: 1.7...5.5V Clock frequency: 1MHz Mounting: SMD Case: TSOP5 Kind of interface: serial Operating temperature: -40...125°C Access time: 450ns Kind of package: reel; tape |
товару немає в наявності |
Мінімальне замовлення: 3000 шт В кошику од. на суму грн. | |||||||||||||||||||
| NV24C16UVLT2G | ONSEMI |
Category: Serial EEPROM memories - integ. circ.Description: IC: EEPROM memory; 16kbEEPROM; I2C; 2kx8bit; 1.7÷5.5V; 1MHz; US8 Type of integrated circuit: EEPROM memory Kind of memory: EEPROM Memory: 16kb EEPROM Interface: I2C Memory organisation: 2kx8bit Operating voltage: 1.7...5.5V Clock frequency: 1MHz Mounting: SMD Case: US8 Kind of interface: serial Operating temperature: -40...125°C Access time: 450ns Kind of package: reel; tape |
товару немає в наявності |
Мінімальне замовлення: 3000 шт В кошику од. на суму грн. | |||||||||||||||||||
| CAT24C16YI-GT3 | ONSEMI |
Category: Serial EEPROM memories - integ. circ.Description: IC: EEPROM memory; 16kbEEPROM; I2C; 2048x8bit; 1.7÷5.5V; 400kHz Kind of package: reel; tape Case: TSSOP8 Interface: I2C Operating voltage: 1.7...5.5V Kind of memory: EEPROM Mounting: SMD Access time: 900ns Type of integrated circuit: EEPROM memory Operating temperature: -40...85°C Clock frequency: 400kHz Memory: 16kb EEPROM Kind of interface: serial Memory organisation: 2048x8bit |
товару немає в наявності |
Мінімальне замовлення: 3000 шт В кошику од. на суму грн. | |||||||||||||||||||
| CAT24C16C4ATR | ONSEMI |
Category: Serial EEPROM memories - integ. circ.Description: IC: EEPROM memory; 16kbEEPROM; I2C; 2048x8bit; 1.7÷5.5V; 400kHz Type of integrated circuit: EEPROM memory Kind of memory: EEPROM Memory: 16kb EEPROM Interface: I2C Memory organisation: 2048x8bit Operating voltage: 1.7...5.5V Clock frequency: 400kHz Mounting: SMD Case: WLCSP4 Kind of interface: serial Operating temperature: -40...85°C Access time: 900ns Kind of package: reel; tape |
товару немає в наявності |
В кошику од. на суму грн. | |||||||||||||||||||
| CAT24C16C5ATR | ONSEMI |
Category: Serial EEPROM memories - integ. circ.Description: IC: EEPROM memory; 16kbEEPROM; I2C; 2048x8bit; 1.7÷5.5V; 400kHz Type of integrated circuit: EEPROM memory Kind of memory: EEPROM Memory: 16kb EEPROM Interface: I2C Memory organisation: 2048x8bit Operating voltage: 1.7...5.5V Clock frequency: 400kHz Mounting: SMD Case: WLCSP5 Kind of interface: serial Operating temperature: -40...85°C Access time: 900ns Kind of package: reel; tape |
товару немає в наявності |
Мінімальне замовлення: 5000 шт В кошику од. на суму грн. | |||||||||||||||||||
| CAV24C16WE-GT3 | ONSEMI |
Category: Serial EEPROM memories - integ. circ.Description: IC: EEPROM memory; 16kbEEPROM; I2C; 2048x8bit; 2.5÷5.5V; 400kHz Type of integrated circuit: EEPROM memory Kind of memory: EEPROM Memory: 16kb EEPROM Interface: I2C Memory organisation: 2048x8bit Operating voltage: 2.5...5.5V Clock frequency: 400kHz Mounting: SMD Case: SOIC8 Kind of interface: serial Operating temperature: -40...125°C Access time: 900ns Kind of package: reel; tape |
товару немає в наявності |
Мінімальне замовлення: 3000 шт В кошику од. на суму грн. | |||||||||||||||||||
| CAV24C16YE-GT3 | ONSEMI |
Category: Serial EEPROM memories - integ. circ.Description: IC: EEPROM memory; 16kbEEPROM; I2C; 2048x8bit; 2.5÷5.5V; 400kHz Type of integrated circuit: EEPROM memory Kind of memory: EEPROM Memory: 16kb EEPROM Interface: I2C Memory organisation: 2048x8bit Operating voltage: 2.5...5.5V Clock frequency: 400kHz Mounting: SMD Case: TSSOP8 Kind of interface: serial Operating temperature: -40...125°C Access time: 900ns Kind of package: reel; tape |
товару немає в наявності |
Мінімальне замовлення: 3000 шт В кошику од. на суму грн. | |||||||||||||||||||
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NCP3066DR2G | ONSEMI |
Category: Voltage regulators - DC/DC circuitsDescription: PMIC; DC/DC converter,LED driver; Uin: 3÷40VDC; 1.5A; SO8; SMD Type of integrated circuit: PMIC Kind of integrated circuit: DC/DC converter; LED driver Input voltage: 3...40V DC Output current: 1.5A Case: SO8 Mounting: SMD Frequency: 110...190kHz Topology: boost; buck; buck-boost Number of channels: 1 Operating temperature: 0...85°C Kind of package: reel; tape Integrated circuit features: ON/OFF function Operating voltage: 3...42V DC |
товару немає в наявності |
Мінімальне замовлення: 2500 шт В кошику од. на суму грн. | ||||||||||||||||||
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2SA1417S-TD-E | ONSEMI |
Category: PNP SMD transistorsDescription: Transistor: PNP; bipolar; 100V; 2A; 1.5W; SOT89 Polarisation: bipolar Kind of package: reel; tape Case: SOT89 Type of transistor: PNP Mounting: SMD Collector current: 2A Power dissipation: 1.5W Collector-emitter voltage: 100V Frequency: 120MHz Current gain: 140...280 |
на замовлення 856 шт: термін постачання 14-30 дні (днів) |
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| 2SA1416S-TD-E | ONSEMI |
Category: PNP SMD transistorsDescription: Transistor: PNP; bipolar; 100V; 1A; 0.5W; SOT89 Polarisation: bipolar Kind of package: reel; tape Case: SOT89 Type of transistor: PNP Mounting: SMD Collector current: 1A Power dissipation: 0.5W Collector-emitter voltage: 100V Current gain: 140...280 |
на замовлення 1000 шт: термін постачання 14-30 дні (днів) |
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2SA1418S-TD-E | ONSEMI |
Category: PNP SMD transistorsDescription: Transistor: PNP; bipolar; 160V; 0.7A; 0.5W; SOT89 Polarisation: bipolar Kind of package: reel; tape Case: SOT89 Type of transistor: PNP Mounting: SMD Collector current: 0.7A Power dissipation: 0.5W Collector-emitter voltage: 160V Frequency: 120MHz Current gain: 140...280 |
на замовлення 460 шт: термін постачання 14-30 дні (днів) |
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2SA1419S-TD-E | ONSEMI |
Category: PNP SMD transistorsDescription: Transistor: PNP; bipolar; 160V; 1.5A; 0.5W; SOT89 Polarisation: bipolar Kind of package: reel; tape Case: SOT89 Type of transistor: PNP Mounting: SMD Collector current: 1.5A Power dissipation: 0.5W Collector-emitter voltage: 160V Frequency: 120MHz Current gain: 140...280 |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||||||||||||
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2SA1418T-TD-E | ONSEMI |
Category: PNP SMD transistorsDescription: Transistor: PNP; bipolar; 160V; 0.7A; 0.5W; SOT89 Polarisation: bipolar Kind of package: reel; tape Case: SOT89 Type of transistor: PNP Mounting: SMD Collector current: 0.7A Power dissipation: 0.5W Collector-emitter voltage: 160V Frequency: 120MHz Current gain: 200...400 |
товару немає в наявності |
Мінімальне замовлення: 3 шт В кошику од. на суму грн. | ||||||||||||||||||
| 2SA1416T-TD-E | ONSEMI |
Category: PNP SMD transistorsDescription: Transistor: PNP; bipolar; 100V; 1A; 0.5W; SOT89 Polarisation: bipolar Kind of package: reel; tape Case: SOT89 Type of transistor: PNP Mounting: SMD Collector current: 1A Power dissipation: 0.5W Collector-emitter voltage: 100V Current gain: 200...400 |
товару немає в наявності |
Мінімальне замовлення: 1000 шт В кошику од. на суму грн. | |||||||||||||||||||
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2SA1417T-TD-E | ONSEMI |
Category: PNP SMD transistorsDescription: Transistor: PNP; bipolar; 100V; 2A; 1.5W; SOT89 Polarisation: bipolar Kind of package: reel; tape Case: SOT89 Type of transistor: PNP Mounting: SMD Collector current: 2A Power dissipation: 1.5W Collector-emitter voltage: 100V Frequency: 120MHz Current gain: 200...400 |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||||||||||||
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SZNUP2125WTT1G | ONSEMI |
Category: Bidirectional TVS SMD diodesDescription: Diode: TVS; 27÷32V; bidirectional; SC70; reel,tape Case: SC70 Mounting: SMD Kind of package: reel; tape Breakdown voltage: 27...32V Application: automotive industry Max. off-state voltage: 24V Semiconductor structure: bidirectional Type of diode: TVS |
на замовлення 2498 шт: термін постачання 14-30 дні (днів) |
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1N5351BRLG | ONSEMI |
Category: THT Zener diodesDescription: Diode: Zener; 5W; 14V; CASE017AA; single diode; reel,tape; 1N53xxB Type of diode: Zener Power dissipation: 5W Zener voltage: 14V Case: CASE017AA Mounting: THT Semiconductor structure: single diode Kind of package: reel; tape Manufacturer series: 1N53xxB Tolerance: ±5% |
товару немає в наявності |
Мінімальне замовлення: 4000 шт В кошику од. на суму грн. | ||||||||||||||||||
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NUF2101MT1G | ONSEMI |
Category: Protection diodes - arraysDescription: Diode: TVS array; bidirectional; TSOP6; Ch: 3; reel,tape Mounting: SMD Application: USB Kind of package: reel; tape Semiconductor structure: bidirectional Case: TSOP6 Type of diode: TVS array Number of channels: 3 |
на замовлення 1520 шт: термін постачання 14-30 дні (днів) |
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NL27WZ16DTT1G | ONSEMI |
Category: Buffers, transceivers, driversDescription: IC: digital; buffer,non-inverting; Ch: 2; CMOS; SMD; TSOP6 Mounting: SMD Supply voltage: 1.65...5.5V DC Type of integrated circuit: digital Operating temperature: -55...125°C Technology: CMOS Case: TSOP6 Kind of integrated circuit: buffer; non-inverting Number of channels: 2 |
на замовлення 71 шт: термін постачання 14-30 дні (днів) |
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NUP4114HMR6T1G | ONSEMI |
Category: Protection diodes - arraysDescription: Diode: TVS array; 6.5V; 12A; unidirectional; ESD; TSOP6; Ch: 4 Type of diode: TVS array Breakdown voltage: 6.5V Semiconductor structure: unidirectional Mounting: SMD Case: TSOP6 Max. off-state voltage: 5.5V Leakage current: 1µA Number of channels: 4 Application: Ethernet Kind of package: reel; tape Max. forward impulse current: 12A Version: ESD |
на замовлення 2365 шт: термін постачання 14-30 дні (днів) |
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NTGS4141NT1G | ONSEMI |
Category: SMD N channel transistorsDescription: Transistor: N-MOSFET; unipolar; 30V; 3.6A; 1W; TSOP6 Case: TSOP6 Mounting: SMD Kind of package: reel; tape Power dissipation: 1W Polarisation: unipolar Drain current: 3.6A Kind of channel: enhancement Drain-source voltage: 30V Type of transistor: N-MOSFET Gate-source voltage: ±20V On-state resistance: 25mΩ |
на замовлення 4615 шт: термін постачання 14-30 дні (днів) |
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NCV1117STAT3G | ONSEMI |
Category: LDO adjustable voltage regulatorsDescription: IC: voltage regulator; LDO,linear,adjustable; 1.25÷18.8V; 1A Type of integrated circuit: voltage regulator Kind of voltage regulator: adjustable; LDO; linear Output voltage: 1.25...18.8V Output current: 1A Case: SOT223 Mounting: SMD Kind of package: reel; tape Number of channels: 1 Application: automotive industry |
на замовлення 2914 шт: термін постачання 14-30 дні (днів) |
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2N6517TA | ONSEMI |
Category: NPN THT transistorsDescription: Transistor: NPN; bipolar; 350V; 0.5A; 0.625W; TO92 Formed Type of transistor: NPN Polarisation: bipolar Power dissipation: 0.625W Case: TO92 Formed Mounting: THT Kind of package: Ammo Pack Frequency: 40...200MHz Collector current: 0.5A Collector-emitter voltage: 350V Current gain: 30...200 |
на замовлення 2065 шт: термін постачання 14-30 дні (днів) |
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| FGHL40T120RWD |
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Виробник: ONSEMI
Category: THT IGBT transistors
Description: Transistor: IGBT; 1.2kV; 40A; 300W; TO247-3
Type of transistor: IGBT
Collector-emitter voltage: 1.2kV
Collector current: 40A
Power dissipation: 300W
Case: TO247-3
Gate-emitter voltage: ±20V
Pulsed collector current: 120A
Mounting: THT
Gate charge: 174nC
Kind of package: tube
Category: THT IGBT transistors
Description: Transistor: IGBT; 1.2kV; 40A; 300W; TO247-3
Type of transistor: IGBT
Collector-emitter voltage: 1.2kV
Collector current: 40A
Power dissipation: 300W
Case: TO247-3
Gate-emitter voltage: ±20V
Pulsed collector current: 120A
Mounting: THT
Gate charge: 174nC
Kind of package: tube
товару немає в наявності
В кошику
од. на суму грн.
| FGY140T120SWD |
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Виробник: ONSEMI
Category: THT IGBT transistors
Description: Transistor: IGBT; 1.2kV; 140A; 576W; TO247-3
Type of transistor: IGBT
Collector-emitter voltage: 1.2kV
Collector current: 140A
Power dissipation: 576W
Case: TO247-3
Gate-emitter voltage: ±20V
Pulsed collector current: 560A
Mounting: THT
Gate charge: 415.4nC
Kind of package: tube
Category: THT IGBT transistors
Description: Transistor: IGBT; 1.2kV; 140A; 576W; TO247-3
Type of transistor: IGBT
Collector-emitter voltage: 1.2kV
Collector current: 140A
Power dissipation: 576W
Case: TO247-3
Gate-emitter voltage: ±20V
Pulsed collector current: 560A
Mounting: THT
Gate charge: 415.4nC
Kind of package: tube
товару немає в наявності
В кошику
од. на суму грн.
| FGH4L40T120LQD |
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Виробник: ONSEMI
Category: THT IGBT transistors
Description: Transistor: IGBT; 1.2kV; 40A; 153W; TO247-4
Type of transistor: IGBT
Collector-emitter voltage: 1.2kV
Collector current: 40A
Power dissipation: 153W
Case: TO247-4
Gate-emitter voltage: ±20V
Pulsed collector current: 160A
Mounting: THT
Gate charge: 227nC
Kind of package: tube
Features of semiconductor devices: Kelvin terminal
Category: THT IGBT transistors
Description: Transistor: IGBT; 1.2kV; 40A; 153W; TO247-4
Type of transistor: IGBT
Collector-emitter voltage: 1.2kV
Collector current: 40A
Power dissipation: 153W
Case: TO247-4
Gate-emitter voltage: ±20V
Pulsed collector current: 160A
Mounting: THT
Gate charge: 227nC
Kind of package: tube
Features of semiconductor devices: Kelvin terminal
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В кошику
од. на суму грн.
| AFGHL40T120RWD |
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Виробник: ONSEMI
Category: THT IGBT transistors
Description: Transistor: IGBT; 1.2kV; 40A; 326W; TO247-3
Type of transistor: IGBT
Collector-emitter voltage: 1.2kV
Collector current: 40A
Power dissipation: 326W
Case: TO247-3
Gate-emitter voltage: ±20V
Pulsed collector current: 120A
Mounting: THT
Gate charge: 170nC
Kind of package: tube
Category: THT IGBT transistors
Description: Transistor: IGBT; 1.2kV; 40A; 326W; TO247-3
Type of transistor: IGBT
Collector-emitter voltage: 1.2kV
Collector current: 40A
Power dissipation: 326W
Case: TO247-3
Gate-emitter voltage: ±20V
Pulsed collector current: 120A
Mounting: THT
Gate charge: 170nC
Kind of package: tube
товару немає в наявності
В кошику
од. на суму грн.
| NSPM5131MUTBG |
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Виробник: ONSEMI
Category: Unidirectional TVS SMD diodes
Description: Diode: TVS; 16.5V; uDFN6; reel,tape
Case: uDFN6
Mounting: SMD
Breakdown voltage: 16.5V
Max. off-state voltage: 13.5V
Kind of package: reel; tape
Type of diode: TVS
Category: Unidirectional TVS SMD diodes
Description: Diode: TVS; 16.5V; uDFN6; reel,tape
Case: uDFN6
Mounting: SMD
Breakdown voltage: 16.5V
Max. off-state voltage: 13.5V
Kind of package: reel; tape
Type of diode: TVS
товару немає в наявності
В кошику
од. на суму грн.
| 2N6284G |
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Виробник: ONSEMI
Category: NPN THT Darlington transistors
Description: Transistor: NPN; bipolar; Darlington; 100V; 20A; 160W; TO3
Type of transistor: NPN
Polarisation: bipolar
Power dissipation: 160W
Case: TO3
Mounting: THT
Current gain: 100...18000
Kind of package: in-tray
Collector current: 20A
Collector-emitter voltage: 100V
Kind of transistor: Darlington
Category: NPN THT Darlington transistors
Description: Transistor: NPN; bipolar; Darlington; 100V; 20A; 160W; TO3
Type of transistor: NPN
Polarisation: bipolar
Power dissipation: 160W
Case: TO3
Mounting: THT
Current gain: 100...18000
Kind of package: in-tray
Collector current: 20A
Collector-emitter voltage: 100V
Kind of transistor: Darlington
на замовлення 123 шт:
термін постачання 14-30 дні (днів)
| Кількість | Ціна без ПДВ |
|---|---|
| 2+ | 431.66 грн |
| 10+ | 270.64 грн |
| 100+ | 268.08 грн |
| 2N6292G |
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Виробник: ONSEMI
Category: NPN THT transistors
Description: Transistor: NPN; bipolar; 80V; 7A; 40W; TO220AB
Type of transistor: NPN
Polarisation: bipolar
Power dissipation: 40W
Case: TO220AB
Mounting: THT
Kind of package: tube
Frequency: 4MHz
Collector current: 7A
Collector-emitter voltage: 80V
Category: NPN THT transistors
Description: Transistor: NPN; bipolar; 80V; 7A; 40W; TO220AB
Type of transistor: NPN
Polarisation: bipolar
Power dissipation: 40W
Case: TO220AB
Mounting: THT
Kind of package: tube
Frequency: 4MHz
Collector current: 7A
Collector-emitter voltage: 80V
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В кошику
од. на суму грн.
| NDT2955 |
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Виробник: ONSEMI
Category: SMD P channel transistors
Description: Transistor: P-MOSFET; unipolar; -60V; -2.5A; 3W; SOT223
Mounting: SMD
Case: SOT223
Kind of package: reel; tape
Drain current: -2.5A
Kind of channel: enhancement
Drain-source voltage: -60V
Type of transistor: P-MOSFET
Gate-source voltage: ±20V
On-state resistance: 0.3Ω
Power dissipation: 3W
Polarisation: unipolar
Category: SMD P channel transistors
Description: Transistor: P-MOSFET; unipolar; -60V; -2.5A; 3W; SOT223
Mounting: SMD
Case: SOT223
Kind of package: reel; tape
Drain current: -2.5A
Kind of channel: enhancement
Drain-source voltage: -60V
Type of transistor: P-MOSFET
Gate-source voltage: ±20V
On-state resistance: 0.3Ω
Power dissipation: 3W
Polarisation: unipolar
на замовлення 3200 шт:
термін постачання 14-30 дні (днів)
| Кількість | Ціна без ПДВ |
|---|---|
| 7+ | 74.71 грн |
| 8+ | 56.53 грн |
| 10+ | 48.65 грн |
| 50+ | 32.37 грн |
| 100+ | 27.49 грн |
| 250+ | 22.95 грн |
| 500+ | 20.56 грн |
| 1000+ | 18.76 грн |
| 2000+ | 17.56 грн |
| NTF2955T1G |
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Виробник: ONSEMI
Category: SMD P channel transistors
Description: Transistor: P-MOSFET; unipolar; -60V; -2A; 2.3W; SOT223
On-state resistance: 0.185Ω
Mounting: SMD
Power dissipation: 2.3W
Polarisation: unipolar
Drain current: -2A
Kind of channel: enhancement
Drain-source voltage: -60V
Type of transistor: P-MOSFET
Gate-source voltage: ±20V
Kind of package: reel; tape
Case: SOT223
Category: SMD P channel transistors
Description: Transistor: P-MOSFET; unipolar; -60V; -2A; 2.3W; SOT223
On-state resistance: 0.185Ω
Mounting: SMD
Power dissipation: 2.3W
Polarisation: unipolar
Drain current: -2A
Kind of channel: enhancement
Drain-source voltage: -60V
Type of transistor: P-MOSFET
Gate-source voltage: ±20V
Kind of package: reel; tape
Case: SOT223
на замовлення 418 шт:
термін постачання 14-30 дні (днів)
| Кількість | Ціна без ПДВ |
|---|---|
| 4+ | 115.29 грн |
| 5+ | 99.35 грн |
| 10+ | 76.14 грн |
| 20+ | 66.46 грн |
| 50+ | 55.41 грн |
| 100+ | 48.56 грн |
| 200+ | 42.91 грн |
| NVF2955T1G |
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Виробник: ONSEMI
Category: SMD P channel transistors
Description: Transistor: P-MOSFET; unipolar; -60V; -2.6A; 2.3W; SOT223
On-state resistance: 154mΩ
Mounting: SMD
Power dissipation: 2.3W
Gate charge: 14.3nC
Polarisation: unipolar
Drain current: -2.6A
Kind of channel: enhancement
Drain-source voltage: -60V
Type of transistor: P-MOSFET
Gate-source voltage: ±20V
Kind of package: reel; tape
Case: SOT223
Category: SMD P channel transistors
Description: Transistor: P-MOSFET; unipolar; -60V; -2.6A; 2.3W; SOT223
On-state resistance: 154mΩ
Mounting: SMD
Power dissipation: 2.3W
Gate charge: 14.3nC
Polarisation: unipolar
Drain current: -2.6A
Kind of channel: enhancement
Drain-source voltage: -60V
Type of transistor: P-MOSFET
Gate-source voltage: ±20V
Kind of package: reel; tape
Case: SOT223
на замовлення 660 шт:
термін постачання 14-30 дні (днів)
| Кількість | Ціна без ПДВ |
|---|---|
| 6+ | 86.70 грн |
| 10+ | 63.38 грн |
| 25+ | 52.24 грн |
| MJD2955G |
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Виробник: ONSEMI
Category: PNP SMD transistors
Description: Transistor: PNP; bipolar; 60V; 10A; 20W; DPAK
Type of transistor: PNP
Polarisation: bipolar
Collector-emitter voltage: 60V
Collector current: 10A
Power dissipation: 20W
Case: DPAK
Current gain: 20...100
Mounting: SMD
Kind of package: tube
Frequency: 2MHz
Category: PNP SMD transistors
Description: Transistor: PNP; bipolar; 60V; 10A; 20W; DPAK
Type of transistor: PNP
Polarisation: bipolar
Collector-emitter voltage: 60V
Collector current: 10A
Power dissipation: 20W
Case: DPAK
Current gain: 20...100
Mounting: SMD
Kind of package: tube
Frequency: 2MHz
на замовлення 21 шт:
термін постачання 14-30 дні (днів)
| Кількість | Ціна без ПДВ |
|---|---|
| 6+ | 89.47 грн |
| 11+ | 39.48 грн |
| MJE2955TG |
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Виробник: ONSEMI
Category: PNP THT transistors
Description: Transistor: PNP; bipolar; 60V; 10A; 125W; TO220AB
Type of transistor: PNP
Polarisation: bipolar
Collector-emitter voltage: 60V
Collector current: 10A
Power dissipation: 125W
Case: TO220AB
Current gain: 20...100
Mounting: THT
Kind of package: tube
Frequency: 2MHz
Category: PNP THT transistors
Description: Transistor: PNP; bipolar; 60V; 10A; 125W; TO220AB
Type of transistor: PNP
Polarisation: bipolar
Collector-emitter voltage: 60V
Collector current: 10A
Power dissipation: 125W
Case: TO220AB
Current gain: 20...100
Mounting: THT
Kind of package: tube
Frequency: 2MHz
на замовлення 107 шт:
термін постачання 14-30 дні (днів)
| Кількість | Ціна без ПДВ |
|---|---|
| 5+ | 101.46 грн |
| 10+ | 46.34 грн |
| 50+ | 38.03 грн |
| SVD2955T4G |
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Виробник: ONSEMI
Category: SMD P channel transistors
Description: Transistor: P-MOSFET; unipolar; -60V; -12A; Idm: -18A; 55W; DPAK
Mounting: SMD
Pulsed drain current: -18A
Power dissipation: 55W
Gate charge: 15nC
Polarisation: unipolar
Drain current: -12A
Kind of channel: enhancement
Drain-source voltage: -60V
Type of transistor: P-MOSFET
Gate-source voltage: ±20V
Kind of package: reel; tape
Case: DPAK
On-state resistance: 0.18Ω
Category: SMD P channel transistors
Description: Transistor: P-MOSFET; unipolar; -60V; -12A; Idm: -18A; 55W; DPAK
Mounting: SMD
Pulsed drain current: -18A
Power dissipation: 55W
Gate charge: 15nC
Polarisation: unipolar
Drain current: -12A
Kind of channel: enhancement
Drain-source voltage: -60V
Type of transistor: P-MOSFET
Gate-source voltage: ±20V
Kind of package: reel; tape
Case: DPAK
On-state resistance: 0.18Ω
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В кошику
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| MJD2955T4G |
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Виробник: ONSEMI
Category: PNP SMD transistors
Description: Transistor: PNP; bipolar; 60V; 10A; 20W; DPAK
Type of transistor: PNP
Polarisation: bipolar
Collector-emitter voltage: 60V
Collector current: 10A
Power dissipation: 20W
Case: DPAK
Current gain: 20...100
Mounting: SMD
Kind of package: reel; tape
Frequency: 2MHz
Category: PNP SMD transistors
Description: Transistor: PNP; bipolar; 60V; 10A; 20W; DPAK
Type of transistor: PNP
Polarisation: bipolar
Collector-emitter voltage: 60V
Collector current: 10A
Power dissipation: 20W
Case: DPAK
Current gain: 20...100
Mounting: SMD
Kind of package: reel; tape
Frequency: 2MHz
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| MJF2955G |
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Виробник: ONSEMI
Category: PNP THT transistors
Description: Transistor: PNP; bipolar; 90V; 10A; 30W; TO220FP
Collector current: 10A
Mounting: THT
Collector-emitter voltage: 90V
Power dissipation: 30W
Polarisation: bipolar
Type of transistor: PNP
Current gain: 20...100
Kind of package: tube
Case: TO220FP
Frequency: 2MHz
Category: PNP THT transistors
Description: Transistor: PNP; bipolar; 90V; 10A; 30W; TO220FP
Collector current: 10A
Mounting: THT
Collector-emitter voltage: 90V
Power dissipation: 30W
Polarisation: bipolar
Type of transistor: PNP
Current gain: 20...100
Kind of package: tube
Case: TO220FP
Frequency: 2MHz
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В кошику
од. на суму грн.
| NCV8535MN500R2G |
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Виробник: ONSEMI
Category: LDO fixed voltage regulators
Description: IC: voltage regulator; LDO,linear,fixed; 5V; 0.5A; DFN10; SMD; Ch: 1
Kind of voltage regulator: fixed; LDO; linear
Output current: 0.5A
Type of integrated circuit: voltage regulator
Application: automotive industry
Output voltage: 5V
Kind of package: reel; tape
Case: DFN10
Number of channels: 1
Mounting: SMD
Category: LDO fixed voltage regulators
Description: IC: voltage regulator; LDO,linear,fixed; 5V; 0.5A; DFN10; SMD; Ch: 1
Kind of voltage regulator: fixed; LDO; linear
Output current: 0.5A
Type of integrated circuit: voltage regulator
Application: automotive industry
Output voltage: 5V
Kind of package: reel; tape
Case: DFN10
Number of channels: 1
Mounting: SMD
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од. на суму грн.
| NCV8535MN330R2G |
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Виробник: ONSEMI
Category: LDO fixed voltage regulators
Description: IC: voltage regulator; LDO,linear,fixed; 3.3V; 0.5A; DFN10; SMD
Kind of voltage regulator: fixed; LDO; linear
Output current: 0.5A
Type of integrated circuit: voltage regulator
Application: automotive industry
Output voltage: 3.3V
Kind of package: reel; tape
Case: DFN10
Number of channels: 1
Mounting: SMD
Category: LDO fixed voltage regulators
Description: IC: voltage regulator; LDO,linear,fixed; 3.3V; 0.5A; DFN10; SMD
Kind of voltage regulator: fixed; LDO; linear
Output current: 0.5A
Type of integrated circuit: voltage regulator
Application: automotive industry
Output voltage: 3.3V
Kind of package: reel; tape
Case: DFN10
Number of channels: 1
Mounting: SMD
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| MM74HCT14M |
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Виробник: ONSEMI
Category: Gates, inverters
Description: IC: digital; NOT; Ch: 6; IN: 1; CMOS; SMD; SO14; 4.5÷5.5VDC; -40÷85°C
Type of integrated circuit: digital
Number of channels: hex; 6
Number of inputs: 1
Mounting: SMD
Case: SO14
Operating temperature: -40...85°C
Quiescent current: 10µA
Family: HCT
Supply voltage: 4.5...5.5V DC
Technology: CMOS
Kind of input: with Schmitt trigger
Kind of package: tube
Kind of gate: NOT
Category: Gates, inverters
Description: IC: digital; NOT; Ch: 6; IN: 1; CMOS; SMD; SO14; 4.5÷5.5VDC; -40÷85°C
Type of integrated circuit: digital
Number of channels: hex; 6
Number of inputs: 1
Mounting: SMD
Case: SO14
Operating temperature: -40...85°C
Quiescent current: 10µA
Family: HCT
Supply voltage: 4.5...5.5V DC
Technology: CMOS
Kind of input: with Schmitt trigger
Kind of package: tube
Kind of gate: NOT
на замовлення 86 шт:
термін постачання 14-30 дні (днів)
| Кількість | Ціна без ПДВ |
|---|---|
| 14+ | 33.20 грн |
| 20+ | 21.67 грн |
| 25+ | 19.44 грн |
| 55+ | 18.07 грн |
| MC74HCT14ADG |
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Виробник: ONSEMI
Category: Gates, inverters
Description: IC: digital; NOT; Ch: 6; IN: 1; CMOS; SMD; SO14; 4.5÷5.5VDC; -55÷125°C
Type of integrated circuit: digital
Number of channels: hex; 6
Number of inputs: 1
Mounting: SMD
Case: SO14
Operating temperature: -55...125°C
Family: HCT
Supply voltage: 4.5...5.5V DC
Technology: CMOS
Kind of input: with Schmitt trigger
Kind of package: tube
Delay time: 32ns
Kind of gate: NOT
Category: Gates, inverters
Description: IC: digital; NOT; Ch: 6; IN: 1; CMOS; SMD; SO14; 4.5÷5.5VDC; -55÷125°C
Type of integrated circuit: digital
Number of channels: hex; 6
Number of inputs: 1
Mounting: SMD
Case: SO14
Operating temperature: -55...125°C
Family: HCT
Supply voltage: 4.5...5.5V DC
Technology: CMOS
Kind of input: with Schmitt trigger
Kind of package: tube
Delay time: 32ns
Kind of gate: NOT
на замовлення 55 шт:
термін постачання 14-30 дні (днів)
| Кількість | Ціна без ПДВ |
|---|---|
| 15+ | 31.36 грн |
| 21+ | 20.98 грн |
| 25+ | 18.93 грн |
| 55+ | 17.56 грн |
| MM74HCT14MX |
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Виробник: ONSEMI
Category: Gates, inverters
Description: IC: digital; NOT; Ch: 6; IN: 1; CMOS; SMD; SO14; 4.5÷5.5VDC; -40÷85°C
Type of integrated circuit: digital
Number of channels: hex; 6
Number of inputs: 1
Mounting: SMD
Case: SO14
Operating temperature: -40...85°C
Family: HCT
Supply voltage: 4.5...5.5V DC
Technology: CMOS
Kind of input: with Schmitt trigger
Kind of package: reel; tape
Delay time: 13ns
Kind of gate: NOT
Category: Gates, inverters
Description: IC: digital; NOT; Ch: 6; IN: 1; CMOS; SMD; SO14; 4.5÷5.5VDC; -40÷85°C
Type of integrated circuit: digital
Number of channels: hex; 6
Number of inputs: 1
Mounting: SMD
Case: SO14
Operating temperature: -40...85°C
Family: HCT
Supply voltage: 4.5...5.5V DC
Technology: CMOS
Kind of input: with Schmitt trigger
Kind of package: reel; tape
Delay time: 13ns
Kind of gate: NOT
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| MC74HCT14ADR2G |
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Виробник: ONSEMI
Category: Gates, inverters
Description: IC: digital; NOT; Ch: 6; IN: 1; CMOS; SMD; SO14; 4.5÷5.5VDC; -55÷125°C
Type of integrated circuit: digital
Number of channels: hex; 6
Number of inputs: 1
Mounting: SMD
Case: SO14
Operating temperature: -55...125°C
Family: HCT
Supply voltage: 4.5...5.5V DC
Technology: CMOS
Kind of input: with Schmitt trigger
Kind of package: reel; tape
Delay time: 32ns
Kind of gate: NOT
Category: Gates, inverters
Description: IC: digital; NOT; Ch: 6; IN: 1; CMOS; SMD; SO14; 4.5÷5.5VDC; -55÷125°C
Type of integrated circuit: digital
Number of channels: hex; 6
Number of inputs: 1
Mounting: SMD
Case: SO14
Operating temperature: -55...125°C
Family: HCT
Supply voltage: 4.5...5.5V DC
Technology: CMOS
Kind of input: with Schmitt trigger
Kind of package: reel; tape
Delay time: 32ns
Kind of gate: NOT
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Мінімальне замовлення: 2500 шт
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| MC74HCT14ADTR2G |
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Виробник: ONSEMI
Category: Gates, inverters
Description: IC: digital; NOT; Ch: 6; IN: 1; CMOS; SMD; TSSOP14; 4.5÷5.5VDC; 32ns
Type of integrated circuit: digital
Number of channels: hex; 6
Number of inputs: 1
Mounting: SMD
Case: TSSOP14
Operating temperature: -55...125°C
Family: HCT
Supply voltage: 4.5...5.5V DC
Technology: CMOS
Kind of input: with Schmitt trigger
Kind of package: reel; tape
Delay time: 32ns
Kind of gate: NOT
Category: Gates, inverters
Description: IC: digital; NOT; Ch: 6; IN: 1; CMOS; SMD; TSSOP14; 4.5÷5.5VDC; 32ns
Type of integrated circuit: digital
Number of channels: hex; 6
Number of inputs: 1
Mounting: SMD
Case: TSSOP14
Operating temperature: -55...125°C
Family: HCT
Supply voltage: 4.5...5.5V DC
Technology: CMOS
Kind of input: with Schmitt trigger
Kind of package: reel; tape
Delay time: 32ns
Kind of gate: NOT
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| MM74HCT14MTCX |
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Виробник: ONSEMI
Category: Gates, inverters
Description: IC: digital; NOT; Ch: 6; IN: 1; CMOS; SMD; TSSOP14; 4.5÷5.5VDC; 13ns
Type of integrated circuit: digital
Number of channels: hex; 6
Number of inputs: 1
Mounting: SMD
Case: TSSOP14
Operating temperature: -40...85°C
Family: HCT
Supply voltage: 4.5...5.5V DC
Technology: CMOS
Kind of input: with Schmitt trigger
Kind of package: reel; tape
Delay time: 13ns
Kind of gate: NOT
Category: Gates, inverters
Description: IC: digital; NOT; Ch: 6; IN: 1; CMOS; SMD; TSSOP14; 4.5÷5.5VDC; 13ns
Type of integrated circuit: digital
Number of channels: hex; 6
Number of inputs: 1
Mounting: SMD
Case: TSSOP14
Operating temperature: -40...85°C
Family: HCT
Supply voltage: 4.5...5.5V DC
Technology: CMOS
Kind of input: with Schmitt trigger
Kind of package: reel; tape
Delay time: 13ns
Kind of gate: NOT
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Мінімальне замовлення: 2500 шт
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од. на суму грн.
| MC33164D-5R2G |
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Виробник: ONSEMI
Category: Supervisor circuits
Description: IC: supervisor circuit; open drain; Active logical level: low
Mounting: SMD
Supply voltage: 1...10V
Active logical level: low
Type of integrated circuit: supervisor circuit
Operating temperature: -40...125°C
Threshold on-voltage: 5V
Case: SOIC8
Kind of integrated circuit: power on reset monitor (PoR); voltage detector
Number of channels: 1
Kind of RESET output: open drain
Category: Supervisor circuits
Description: IC: supervisor circuit; open drain; Active logical level: low
Mounting: SMD
Supply voltage: 1...10V
Active logical level: low
Type of integrated circuit: supervisor circuit
Operating temperature: -40...125°C
Threshold on-voltage: 5V
Case: SOIC8
Kind of integrated circuit: power on reset monitor (PoR); voltage detector
Number of channels: 1
Kind of RESET output: open drain
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| MC33164D-3R2G |
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Виробник: ONSEMI
Category: Supervisor circuits
Description: IC: supervisor circuit; open drain; Active logical level: low
Mounting: SMD
Supply voltage: 1...10V
Active logical level: low
Type of integrated circuit: supervisor circuit
Operating temperature: -40...125°C
Threshold on-voltage: 3V
Case: SOIC8
Kind of integrated circuit: power on reset monitor (PoR); voltage detector
Number of channels: 1
Kind of RESET output: open drain
Category: Supervisor circuits
Description: IC: supervisor circuit; open drain; Active logical level: low
Mounting: SMD
Supply voltage: 1...10V
Active logical level: low
Type of integrated circuit: supervisor circuit
Operating temperature: -40...125°C
Threshold on-voltage: 3V
Case: SOIC8
Kind of integrated circuit: power on reset monitor (PoR); voltage detector
Number of channels: 1
Kind of RESET output: open drain
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| MC33164DM-3R2G |
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Виробник: ONSEMI
Category: Supervisor circuits
Description: IC: supervisor circuit; open drain; Active logical level: low
Mounting: SMD
Supply voltage: 1...10V
Active logical level: low
Type of integrated circuit: supervisor circuit
Operating temperature: -40...125°C
Threshold on-voltage: 3V
Case: TSSOP8
Kind of integrated circuit: power on reset monitor (PoR); voltage detector
Number of channels: 1
Kind of RESET output: open drain
Category: Supervisor circuits
Description: IC: supervisor circuit; open drain; Active logical level: low
Mounting: SMD
Supply voltage: 1...10V
Active logical level: low
Type of integrated circuit: supervisor circuit
Operating temperature: -40...125°C
Threshold on-voltage: 3V
Case: TSSOP8
Kind of integrated circuit: power on reset monitor (PoR); voltage detector
Number of channels: 1
Kind of RESET output: open drain
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Мінімальне замовлення: 4000 шт
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од. на суму грн.
| MC33164DM-5R2G |
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Виробник: ONSEMI
Category: Supervisor circuits
Description: IC: supervisor circuit; open drain; Active logical level: low
Mounting: SMD
Supply voltage: 1...10V
Active logical level: low
Type of integrated circuit: supervisor circuit
Operating temperature: -40...125°C
Threshold on-voltage: 5V
Case: TSSOP8
Kind of integrated circuit: power on reset monitor (PoR); voltage detector
Number of channels: 1
Kind of RESET output: open drain
Category: Supervisor circuits
Description: IC: supervisor circuit; open drain; Active logical level: low
Mounting: SMD
Supply voltage: 1...10V
Active logical level: low
Type of integrated circuit: supervisor circuit
Operating temperature: -40...125°C
Threshold on-voltage: 5V
Case: TSSOP8
Kind of integrated circuit: power on reset monitor (PoR); voltage detector
Number of channels: 1
Kind of RESET output: open drain
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Мінімальне замовлення: 4000 шт
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од. на суму грн.
| MC34164D-5G |
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Виробник: ONSEMI
Category: Supervisor circuits
Description: IC: supervisor circuit; open drain; Active logical level: low
Supply voltage: 10V
Active logical level: low
Type of integrated circuit: supervisor circuit
Operating temperature: 0...70°C
Threshold on-voltage: 5V
Case: SOIC8
Kind of integrated circuit: power on reset monitor (PoR); voltage detector
Number of channels: 1
Kind of RESET output: open drain
Mounting: SMD
Category: Supervisor circuits
Description: IC: supervisor circuit; open drain; Active logical level: low
Supply voltage: 10V
Active logical level: low
Type of integrated circuit: supervisor circuit
Operating temperature: 0...70°C
Threshold on-voltage: 5V
Case: SOIC8
Kind of integrated circuit: power on reset monitor (PoR); voltage detector
Number of channels: 1
Kind of RESET output: open drain
Mounting: SMD
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| MC34164D-5R2G |
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Виробник: ONSEMI
Category: Supervisor circuits
Description: IC: supervisor circuit; open drain; Active logical level: low
Supply voltage: 10V
Active logical level: low
Type of integrated circuit: supervisor circuit
Operating temperature: 0...70°C
Threshold on-voltage: 5V
Case: SOIC8
Kind of integrated circuit: power on reset monitor (PoR); voltage detector
Number of channels: 1
Kind of RESET output: open drain
Mounting: SMD
Category: Supervisor circuits
Description: IC: supervisor circuit; open drain; Active logical level: low
Supply voltage: 10V
Active logical level: low
Type of integrated circuit: supervisor circuit
Operating temperature: 0...70°C
Threshold on-voltage: 5V
Case: SOIC8
Kind of integrated circuit: power on reset monitor (PoR); voltage detector
Number of channels: 1
Kind of RESET output: open drain
Mounting: SMD
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| NCV4949CDR2G |
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Виробник: ONSEMI
Category: LDO fixed voltage regulators
Description: IC: voltage regulator; LDO,linear,fixed; 5V; 0.1A; SO8; SMD; Ch: 1
Type of integrated circuit: voltage regulator
Kind of voltage regulator: fixed; LDO; linear
Output voltage: 5V
Output current: 0.1A
Case: SO8
Mounting: SMD
Kind of package: reel; tape
Number of channels: 1
Application: automotive industry
Category: LDO fixed voltage regulators
Description: IC: voltage regulator; LDO,linear,fixed; 5V; 0.1A; SO8; SMD; Ch: 1
Type of integrated circuit: voltage regulator
Kind of voltage regulator: fixed; LDO; linear
Output voltage: 5V
Output current: 0.1A
Case: SO8
Mounting: SMD
Kind of package: reel; tape
Number of channels: 1
Application: automotive industry
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| NCV4949CPDR2G |
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Виробник: ONSEMI
Category: LDO fixed voltage regulators
Description: IC: voltage regulator; LDO,linear,fixed; 5V; 0.1A; SO8; SMD; Ch: 1
Type of integrated circuit: voltage regulator
Kind of voltage regulator: fixed; LDO; linear
Output voltage: 5V
Output current: 0.1A
Case: SO8
Mounting: SMD
Kind of package: reel; tape
Number of channels: 1
Application: automotive industry
Category: LDO fixed voltage regulators
Description: IC: voltage regulator; LDO,linear,fixed; 5V; 0.1A; SO8; SMD; Ch: 1
Type of integrated circuit: voltage regulator
Kind of voltage regulator: fixed; LDO; linear
Output voltage: 5V
Output current: 0.1A
Case: SO8
Mounting: SMD
Kind of package: reel; tape
Number of channels: 1
Application: automotive industry
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| CAT24C16WI-GT3 |
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Виробник: ONSEMI
Category: Serial EEPROM memories - integ. circ.
Description: IC: EEPROM memory; 16kbEEPROM; I2C; 2048x8bit; 1.7÷5.5V; 400kHz
Kind of package: reel; tape
Case: SOIC8
Interface: I2C
Operating voltage: 1.7...5.5V
Kind of memory: EEPROM
Mounting: SMD
Access time: 900ns
Type of integrated circuit: EEPROM memory
Operating temperature: -40...85°C
Clock frequency: 400kHz
Memory: 16kb EEPROM
Kind of interface: serial
Memory organisation: 2048x8bit
Category: Serial EEPROM memories - integ. circ.
Description: IC: EEPROM memory; 16kbEEPROM; I2C; 2048x8bit; 1.7÷5.5V; 400kHz
Kind of package: reel; tape
Case: SOIC8
Interface: I2C
Operating voltage: 1.7...5.5V
Kind of memory: EEPROM
Mounting: SMD
Access time: 900ns
Type of integrated circuit: EEPROM memory
Operating temperature: -40...85°C
Clock frequency: 400kHz
Memory: 16kb EEPROM
Kind of interface: serial
Memory organisation: 2048x8bit
на замовлення 324 шт:
термін постачання 14-30 дні (днів)
| Кількість | Ціна без ПДВ |
|---|---|
| 19+ | 24.90 грн |
| 25+ | 21.41 грн |
| 50+ | 19.96 грн |
| 100+ | 18.07 грн |
| N24C16UDTG |
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Виробник: ONSEMI
Category: Serial EEPROM memories - integ. circ.
Description: IC: EEPROM memory; 16kbEEPROM; I2C; 2kx8bit; 1.6÷5.5V; 1MHz; US8
Type of integrated circuit: EEPROM memory
Kind of memory: EEPROM
Memory: 16kb EEPROM
Interface: I2C
Memory organisation: 2kx8bit
Operating voltage: 1.6...5.5V
Clock frequency: 1MHz
Mounting: SMD
Case: US8
Kind of interface: serial
Operating temperature: -40...85°C
Access time: 450ns
Kind of package: reel; tape
Category: Serial EEPROM memories - integ. circ.
Description: IC: EEPROM memory; 16kbEEPROM; I2C; 2kx8bit; 1.6÷5.5V; 1MHz; US8
Type of integrated circuit: EEPROM memory
Kind of memory: EEPROM
Memory: 16kb EEPROM
Interface: I2C
Memory organisation: 2kx8bit
Operating voltage: 1.6...5.5V
Clock frequency: 1MHz
Mounting: SMD
Case: US8
Kind of interface: serial
Operating temperature: -40...85°C
Access time: 450ns
Kind of package: reel; tape
товару немає в наявності
Мінімальне замовлення: 3000 шт
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од. на суму грн.
| N24C16UVTG |
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Виробник: ONSEMI
Category: Serial EEPROM memories - integ. circ.
Description: IC: EEPROM memory; I2C; 2kx8bit; US8; serial
Type of integrated circuit: EEPROM memory
Kind of memory: EEPROM
Interface: I2C
Memory organisation: 2kx8bit
Mounting: SMD
Case: US8
Kind of interface: serial
Operating temperature: -40...125°C
Access time: 450ns
Category: Serial EEPROM memories - integ. circ.
Description: IC: EEPROM memory; I2C; 2kx8bit; US8; serial
Type of integrated circuit: EEPROM memory
Kind of memory: EEPROM
Interface: I2C
Memory organisation: 2kx8bit
Mounting: SMD
Case: US8
Kind of interface: serial
Operating temperature: -40...125°C
Access time: 450ns
товару немає в наявності
Мінімальне замовлення: 3000 шт
В кошику
од. на суму грн.
| NV24C16DTVLT3G |
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Виробник: ONSEMI
Category: Serial EEPROM memories - integ. circ.
Description: IC: EEPROM memory; 16kbEEPROM; I2C; 2kx8bit; 1.7÷5.5V; 1MHz; TSSOP8
Type of integrated circuit: EEPROM memory
Kind of memory: EEPROM
Memory: 16kb EEPROM
Interface: I2C
Memory organisation: 2kx8bit
Operating voltage: 1.7...5.5V
Clock frequency: 1MHz
Mounting: SMD
Case: TSSOP8
Kind of interface: serial
Operating temperature: -40...125°C
Access time: 450ns
Kind of package: reel; tape
Category: Serial EEPROM memories - integ. circ.
Description: IC: EEPROM memory; 16kbEEPROM; I2C; 2kx8bit; 1.7÷5.5V; 1MHz; TSSOP8
Type of integrated circuit: EEPROM memory
Kind of memory: EEPROM
Memory: 16kb EEPROM
Interface: I2C
Memory organisation: 2kx8bit
Operating voltage: 1.7...5.5V
Clock frequency: 1MHz
Mounting: SMD
Case: TSSOP8
Kind of interface: serial
Operating temperature: -40...125°C
Access time: 450ns
Kind of package: reel; tape
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| NV24C16DWVLT3G |
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Виробник: ONSEMI
Category: Serial EEPROM memories - integ. circ.
Description: IC: EEPROM memory; 16kbEEPROM; I2C; 2kx8bit; 1.7÷5.5V; 1MHz; SOIC8
Type of integrated circuit: EEPROM memory
Kind of memory: EEPROM
Memory: 16kb EEPROM
Interface: I2C
Memory organisation: 2kx8bit
Operating voltage: 1.7...5.5V
Clock frequency: 1MHz
Mounting: SMD
Case: SOIC8
Kind of interface: serial
Operating temperature: -40...125°C
Access time: 450ns
Kind of package: reel; tape
Category: Serial EEPROM memories - integ. circ.
Description: IC: EEPROM memory; 16kbEEPROM; I2C; 2kx8bit; 1.7÷5.5V; 1MHz; SOIC8
Type of integrated circuit: EEPROM memory
Kind of memory: EEPROM
Memory: 16kb EEPROM
Interface: I2C
Memory organisation: 2kx8bit
Operating voltage: 1.7...5.5V
Clock frequency: 1MHz
Mounting: SMD
Case: SOIC8
Kind of interface: serial
Operating temperature: -40...125°C
Access time: 450ns
Kind of package: reel; tape
товару немає в наявності
Мінімальне замовлення: 3000 шт
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од. на суму грн.
| NV24C16MUW3VLTBG |
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Виробник: ONSEMI
Category: Serial EEPROM memories - integ. circ.
Description: IC: EEPROM memory; 16kbEEPROM; I2C; 2kx8bit; 1.7÷5.5V; 1MHz; uDFN8
Type of integrated circuit: EEPROM memory
Kind of memory: EEPROM
Memory: 16kb EEPROM
Interface: I2C
Memory organisation: 2kx8bit
Operating voltage: 1.7...5.5V
Clock frequency: 1MHz
Mounting: SMD
Case: uDFN8
Kind of interface: serial
Operating temperature: -40...125°C
Access time: 450ns
Kind of package: reel; tape
Category: Serial EEPROM memories - integ. circ.
Description: IC: EEPROM memory; 16kbEEPROM; I2C; 2kx8bit; 1.7÷5.5V; 1MHz; uDFN8
Type of integrated circuit: EEPROM memory
Kind of memory: EEPROM
Memory: 16kb EEPROM
Interface: I2C
Memory organisation: 2kx8bit
Operating voltage: 1.7...5.5V
Clock frequency: 1MHz
Mounting: SMD
Case: uDFN8
Kind of interface: serial
Operating temperature: -40...125°C
Access time: 450ns
Kind of package: reel; tape
товару немає в наявності
Мінімальне замовлення: 3000 шт
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од. на суму грн.
| NV24C16SNVLT3G |
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Виробник: ONSEMI
Category: Serial EEPROM memories - integ. circ.
Description: IC: EEPROM memory; 16kbEEPROM; I2C; 2kx8bit; 1.7÷5.5V; 1MHz; TSOP5
Type of integrated circuit: EEPROM memory
Kind of memory: EEPROM
Memory: 16kb EEPROM
Interface: I2C
Memory organisation: 2kx8bit
Operating voltage: 1.7...5.5V
Clock frequency: 1MHz
Mounting: SMD
Case: TSOP5
Kind of interface: serial
Operating temperature: -40...125°C
Access time: 450ns
Kind of package: reel; tape
Category: Serial EEPROM memories - integ. circ.
Description: IC: EEPROM memory; 16kbEEPROM; I2C; 2kx8bit; 1.7÷5.5V; 1MHz; TSOP5
Type of integrated circuit: EEPROM memory
Kind of memory: EEPROM
Memory: 16kb EEPROM
Interface: I2C
Memory organisation: 2kx8bit
Operating voltage: 1.7...5.5V
Clock frequency: 1MHz
Mounting: SMD
Case: TSOP5
Kind of interface: serial
Operating temperature: -40...125°C
Access time: 450ns
Kind of package: reel; tape
товару немає в наявності
Мінімальне замовлення: 3000 шт
В кошику
од. на суму грн.
| NV24C16UVLT2G |
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Виробник: ONSEMI
Category: Serial EEPROM memories - integ. circ.
Description: IC: EEPROM memory; 16kbEEPROM; I2C; 2kx8bit; 1.7÷5.5V; 1MHz; US8
Type of integrated circuit: EEPROM memory
Kind of memory: EEPROM
Memory: 16kb EEPROM
Interface: I2C
Memory organisation: 2kx8bit
Operating voltage: 1.7...5.5V
Clock frequency: 1MHz
Mounting: SMD
Case: US8
Kind of interface: serial
Operating temperature: -40...125°C
Access time: 450ns
Kind of package: reel; tape
Category: Serial EEPROM memories - integ. circ.
Description: IC: EEPROM memory; 16kbEEPROM; I2C; 2kx8bit; 1.7÷5.5V; 1MHz; US8
Type of integrated circuit: EEPROM memory
Kind of memory: EEPROM
Memory: 16kb EEPROM
Interface: I2C
Memory organisation: 2kx8bit
Operating voltage: 1.7...5.5V
Clock frequency: 1MHz
Mounting: SMD
Case: US8
Kind of interface: serial
Operating temperature: -40...125°C
Access time: 450ns
Kind of package: reel; tape
товару немає в наявності
Мінімальне замовлення: 3000 шт
В кошику
од. на суму грн.
| CAT24C16YI-GT3 |
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Виробник: ONSEMI
Category: Serial EEPROM memories - integ. circ.
Description: IC: EEPROM memory; 16kbEEPROM; I2C; 2048x8bit; 1.7÷5.5V; 400kHz
Kind of package: reel; tape
Case: TSSOP8
Interface: I2C
Operating voltage: 1.7...5.5V
Kind of memory: EEPROM
Mounting: SMD
Access time: 900ns
Type of integrated circuit: EEPROM memory
Operating temperature: -40...85°C
Clock frequency: 400kHz
Memory: 16kb EEPROM
Kind of interface: serial
Memory organisation: 2048x8bit
Category: Serial EEPROM memories - integ. circ.
Description: IC: EEPROM memory; 16kbEEPROM; I2C; 2048x8bit; 1.7÷5.5V; 400kHz
Kind of package: reel; tape
Case: TSSOP8
Interface: I2C
Operating voltage: 1.7...5.5V
Kind of memory: EEPROM
Mounting: SMD
Access time: 900ns
Type of integrated circuit: EEPROM memory
Operating temperature: -40...85°C
Clock frequency: 400kHz
Memory: 16kb EEPROM
Kind of interface: serial
Memory organisation: 2048x8bit
товару немає в наявності
Мінімальне замовлення: 3000 шт
В кошику
од. на суму грн.
| CAT24C16C4ATR |
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Виробник: ONSEMI
Category: Serial EEPROM memories - integ. circ.
Description: IC: EEPROM memory; 16kbEEPROM; I2C; 2048x8bit; 1.7÷5.5V; 400kHz
Type of integrated circuit: EEPROM memory
Kind of memory: EEPROM
Memory: 16kb EEPROM
Interface: I2C
Memory organisation: 2048x8bit
Operating voltage: 1.7...5.5V
Clock frequency: 400kHz
Mounting: SMD
Case: WLCSP4
Kind of interface: serial
Operating temperature: -40...85°C
Access time: 900ns
Kind of package: reel; tape
Category: Serial EEPROM memories - integ. circ.
Description: IC: EEPROM memory; 16kbEEPROM; I2C; 2048x8bit; 1.7÷5.5V; 400kHz
Type of integrated circuit: EEPROM memory
Kind of memory: EEPROM
Memory: 16kb EEPROM
Interface: I2C
Memory organisation: 2048x8bit
Operating voltage: 1.7...5.5V
Clock frequency: 400kHz
Mounting: SMD
Case: WLCSP4
Kind of interface: serial
Operating temperature: -40...85°C
Access time: 900ns
Kind of package: reel; tape
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В кошику
од. на суму грн.
| CAT24C16C5ATR |
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Виробник: ONSEMI
Category: Serial EEPROM memories - integ. circ.
Description: IC: EEPROM memory; 16kbEEPROM; I2C; 2048x8bit; 1.7÷5.5V; 400kHz
Type of integrated circuit: EEPROM memory
Kind of memory: EEPROM
Memory: 16kb EEPROM
Interface: I2C
Memory organisation: 2048x8bit
Operating voltage: 1.7...5.5V
Clock frequency: 400kHz
Mounting: SMD
Case: WLCSP5
Kind of interface: serial
Operating temperature: -40...85°C
Access time: 900ns
Kind of package: reel; tape
Category: Serial EEPROM memories - integ. circ.
Description: IC: EEPROM memory; 16kbEEPROM; I2C; 2048x8bit; 1.7÷5.5V; 400kHz
Type of integrated circuit: EEPROM memory
Kind of memory: EEPROM
Memory: 16kb EEPROM
Interface: I2C
Memory organisation: 2048x8bit
Operating voltage: 1.7...5.5V
Clock frequency: 400kHz
Mounting: SMD
Case: WLCSP5
Kind of interface: serial
Operating temperature: -40...85°C
Access time: 900ns
Kind of package: reel; tape
товару немає в наявності
Мінімальне замовлення: 5000 шт
В кошику
од. на суму грн.
| CAV24C16WE-GT3 |
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Виробник: ONSEMI
Category: Serial EEPROM memories - integ. circ.
Description: IC: EEPROM memory; 16kbEEPROM; I2C; 2048x8bit; 2.5÷5.5V; 400kHz
Type of integrated circuit: EEPROM memory
Kind of memory: EEPROM
Memory: 16kb EEPROM
Interface: I2C
Memory organisation: 2048x8bit
Operating voltage: 2.5...5.5V
Clock frequency: 400kHz
Mounting: SMD
Case: SOIC8
Kind of interface: serial
Operating temperature: -40...125°C
Access time: 900ns
Kind of package: reel; tape
Category: Serial EEPROM memories - integ. circ.
Description: IC: EEPROM memory; 16kbEEPROM; I2C; 2048x8bit; 2.5÷5.5V; 400kHz
Type of integrated circuit: EEPROM memory
Kind of memory: EEPROM
Memory: 16kb EEPROM
Interface: I2C
Memory organisation: 2048x8bit
Operating voltage: 2.5...5.5V
Clock frequency: 400kHz
Mounting: SMD
Case: SOIC8
Kind of interface: serial
Operating temperature: -40...125°C
Access time: 900ns
Kind of package: reel; tape
товару немає в наявності
Мінімальне замовлення: 3000 шт
В кошику
од. на суму грн.
| CAV24C16YE-GT3 |
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Виробник: ONSEMI
Category: Serial EEPROM memories - integ. circ.
Description: IC: EEPROM memory; 16kbEEPROM; I2C; 2048x8bit; 2.5÷5.5V; 400kHz
Type of integrated circuit: EEPROM memory
Kind of memory: EEPROM
Memory: 16kb EEPROM
Interface: I2C
Memory organisation: 2048x8bit
Operating voltage: 2.5...5.5V
Clock frequency: 400kHz
Mounting: SMD
Case: TSSOP8
Kind of interface: serial
Operating temperature: -40...125°C
Access time: 900ns
Kind of package: reel; tape
Category: Serial EEPROM memories - integ. circ.
Description: IC: EEPROM memory; 16kbEEPROM; I2C; 2048x8bit; 2.5÷5.5V; 400kHz
Type of integrated circuit: EEPROM memory
Kind of memory: EEPROM
Memory: 16kb EEPROM
Interface: I2C
Memory organisation: 2048x8bit
Operating voltage: 2.5...5.5V
Clock frequency: 400kHz
Mounting: SMD
Case: TSSOP8
Kind of interface: serial
Operating temperature: -40...125°C
Access time: 900ns
Kind of package: reel; tape
товару немає в наявності
Мінімальне замовлення: 3000 шт
В кошику
од. на суму грн.
| NCP3066DR2G |
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Виробник: ONSEMI
Category: Voltage regulators - DC/DC circuits
Description: PMIC; DC/DC converter,LED driver; Uin: 3÷40VDC; 1.5A; SO8; SMD
Type of integrated circuit: PMIC
Kind of integrated circuit: DC/DC converter; LED driver
Input voltage: 3...40V DC
Output current: 1.5A
Case: SO8
Mounting: SMD
Frequency: 110...190kHz
Topology: boost; buck; buck-boost
Number of channels: 1
Operating temperature: 0...85°C
Kind of package: reel; tape
Integrated circuit features: ON/OFF function
Operating voltage: 3...42V DC
Category: Voltage regulators - DC/DC circuits
Description: PMIC; DC/DC converter,LED driver; Uin: 3÷40VDC; 1.5A; SO8; SMD
Type of integrated circuit: PMIC
Kind of integrated circuit: DC/DC converter; LED driver
Input voltage: 3...40V DC
Output current: 1.5A
Case: SO8
Mounting: SMD
Frequency: 110...190kHz
Topology: boost; buck; buck-boost
Number of channels: 1
Operating temperature: 0...85°C
Kind of package: reel; tape
Integrated circuit features: ON/OFF function
Operating voltage: 3...42V DC
товару немає в наявності
Мінімальне замовлення: 2500 шт
В кошику
од. на суму грн.
| 2SA1417S-TD-E |
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Виробник: ONSEMI
Category: PNP SMD transistors
Description: Transistor: PNP; bipolar; 100V; 2A; 1.5W; SOT89
Polarisation: bipolar
Kind of package: reel; tape
Case: SOT89
Type of transistor: PNP
Mounting: SMD
Collector current: 2A
Power dissipation: 1.5W
Collector-emitter voltage: 100V
Frequency: 120MHz
Current gain: 140...280
Category: PNP SMD transistors
Description: Transistor: PNP; bipolar; 100V; 2A; 1.5W; SOT89
Polarisation: bipolar
Kind of package: reel; tape
Case: SOT89
Type of transistor: PNP
Mounting: SMD
Collector current: 2A
Power dissipation: 1.5W
Collector-emitter voltage: 100V
Frequency: 120MHz
Current gain: 140...280
на замовлення 856 шт:
термін постачання 14-30 дні (днів)
| Кількість | Ціна без ПДВ |
|---|---|
| 8+ | 59.03 грн |
| 13+ | 35.29 грн |
| 100+ | 23.98 грн |
| 500+ | 19.53 грн |
| 2SA1416S-TD-E |
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Виробник: ONSEMI
Category: PNP SMD transistors
Description: Transistor: PNP; bipolar; 100V; 1A; 0.5W; SOT89
Polarisation: bipolar
Kind of package: reel; tape
Case: SOT89
Type of transistor: PNP
Mounting: SMD
Collector current: 1A
Power dissipation: 0.5W
Collector-emitter voltage: 100V
Current gain: 140...280
Category: PNP SMD transistors
Description: Transistor: PNP; bipolar; 100V; 1A; 0.5W; SOT89
Polarisation: bipolar
Kind of package: reel; tape
Case: SOT89
Type of transistor: PNP
Mounting: SMD
Collector current: 1A
Power dissipation: 0.5W
Collector-emitter voltage: 100V
Current gain: 140...280
на замовлення 1000 шт:
термін постачання 14-30 дні (днів)
| Кількість | Ціна без ПДВ |
|---|---|
| 9+ | 54.42 грн |
| 12+ | 36.74 грн |
| 100+ | 21.84 грн |
| 250+ | 18.07 грн |
| 500+ | 15.84 грн |
| 1000+ | 14.65 грн |
| 2SA1418S-TD-E |
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Виробник: ONSEMI
Category: PNP SMD transistors
Description: Transistor: PNP; bipolar; 160V; 0.7A; 0.5W; SOT89
Polarisation: bipolar
Kind of package: reel; tape
Case: SOT89
Type of transistor: PNP
Mounting: SMD
Collector current: 0.7A
Power dissipation: 0.5W
Collector-emitter voltage: 160V
Frequency: 120MHz
Current gain: 140...280
Category: PNP SMD transistors
Description: Transistor: PNP; bipolar; 160V; 0.7A; 0.5W; SOT89
Polarisation: bipolar
Kind of package: reel; tape
Case: SOT89
Type of transistor: PNP
Mounting: SMD
Collector current: 0.7A
Power dissipation: 0.5W
Collector-emitter voltage: 160V
Frequency: 120MHz
Current gain: 140...280
на замовлення 460 шт:
термін постачання 14-30 дні (днів)
| Кількість | Ціна без ПДВ |
|---|---|
| 10+ | 46.12 грн |
| 15+ | 29.21 грн |
| 100+ | 21.58 грн |
| 250+ | 20.21 грн |
| 2SA1419S-TD-E |
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Виробник: ONSEMI
Category: PNP SMD transistors
Description: Transistor: PNP; bipolar; 160V; 1.5A; 0.5W; SOT89
Polarisation: bipolar
Kind of package: reel; tape
Case: SOT89
Type of transistor: PNP
Mounting: SMD
Collector current: 1.5A
Power dissipation: 0.5W
Collector-emitter voltage: 160V
Frequency: 120MHz
Current gain: 140...280
Category: PNP SMD transistors
Description: Transistor: PNP; bipolar; 160V; 1.5A; 0.5W; SOT89
Polarisation: bipolar
Kind of package: reel; tape
Case: SOT89
Type of transistor: PNP
Mounting: SMD
Collector current: 1.5A
Power dissipation: 0.5W
Collector-emitter voltage: 160V
Frequency: 120MHz
Current gain: 140...280
товару немає в наявності
В кошику
од. на суму грн.
| 2SA1418T-TD-E |
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Виробник: ONSEMI
Category: PNP SMD transistors
Description: Transistor: PNP; bipolar; 160V; 0.7A; 0.5W; SOT89
Polarisation: bipolar
Kind of package: reel; tape
Case: SOT89
Type of transistor: PNP
Mounting: SMD
Collector current: 0.7A
Power dissipation: 0.5W
Collector-emitter voltage: 160V
Frequency: 120MHz
Current gain: 200...400
Category: PNP SMD transistors
Description: Transistor: PNP; bipolar; 160V; 0.7A; 0.5W; SOT89
Polarisation: bipolar
Kind of package: reel; tape
Case: SOT89
Type of transistor: PNP
Mounting: SMD
Collector current: 0.7A
Power dissipation: 0.5W
Collector-emitter voltage: 160V
Frequency: 120MHz
Current gain: 200...400
товару немає в наявності
Мінімальне замовлення: 3 шт
В кошику
од. на суму грн.
| 2SA1416T-TD-E |
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Виробник: ONSEMI
Category: PNP SMD transistors
Description: Transistor: PNP; bipolar; 100V; 1A; 0.5W; SOT89
Polarisation: bipolar
Kind of package: reel; tape
Case: SOT89
Type of transistor: PNP
Mounting: SMD
Collector current: 1A
Power dissipation: 0.5W
Collector-emitter voltage: 100V
Current gain: 200...400
Category: PNP SMD transistors
Description: Transistor: PNP; bipolar; 100V; 1A; 0.5W; SOT89
Polarisation: bipolar
Kind of package: reel; tape
Case: SOT89
Type of transistor: PNP
Mounting: SMD
Collector current: 1A
Power dissipation: 0.5W
Collector-emitter voltage: 100V
Current gain: 200...400
товару немає в наявності
Мінімальне замовлення: 1000 шт
В кошику
од. на суму грн.
| 2SA1417T-TD-E |
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Виробник: ONSEMI
Category: PNP SMD transistors
Description: Transistor: PNP; bipolar; 100V; 2A; 1.5W; SOT89
Polarisation: bipolar
Kind of package: reel; tape
Case: SOT89
Type of transistor: PNP
Mounting: SMD
Collector current: 2A
Power dissipation: 1.5W
Collector-emitter voltage: 100V
Frequency: 120MHz
Current gain: 200...400
Category: PNP SMD transistors
Description: Transistor: PNP; bipolar; 100V; 2A; 1.5W; SOT89
Polarisation: bipolar
Kind of package: reel; tape
Case: SOT89
Type of transistor: PNP
Mounting: SMD
Collector current: 2A
Power dissipation: 1.5W
Collector-emitter voltage: 100V
Frequency: 120MHz
Current gain: 200...400
товару немає в наявності
В кошику
од. на суму грн.
| SZNUP2125WTT1G |
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Виробник: ONSEMI
Category: Bidirectional TVS SMD diodes
Description: Diode: TVS; 27÷32V; bidirectional; SC70; reel,tape
Case: SC70
Mounting: SMD
Kind of package: reel; tape
Breakdown voltage: 27...32V
Application: automotive industry
Max. off-state voltage: 24V
Semiconductor structure: bidirectional
Type of diode: TVS
Category: Bidirectional TVS SMD diodes
Description: Diode: TVS; 27÷32V; bidirectional; SC70; reel,tape
Case: SC70
Mounting: SMD
Kind of package: reel; tape
Breakdown voltage: 27...32V
Application: automotive industry
Max. off-state voltage: 24V
Semiconductor structure: bidirectional
Type of diode: TVS
на замовлення 2498 шт:
термін постачання 14-30 дні (днів)
| Кількість | Ціна без ПДВ |
|---|---|
| 11+ | 44.27 грн |
| 13+ | 34.43 грн |
| 15+ | 30.32 грн |
| 100+ | 18.07 грн |
| 500+ | 13.02 грн |
| 1000+ | 12.68 грн |
| 1N5351BRLG |
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Виробник: ONSEMI
Category: THT Zener diodes
Description: Diode: Zener; 5W; 14V; CASE017AA; single diode; reel,tape; 1N53xxB
Type of diode: Zener
Power dissipation: 5W
Zener voltage: 14V
Case: CASE017AA
Mounting: THT
Semiconductor structure: single diode
Kind of package: reel; tape
Manufacturer series: 1N53xxB
Tolerance: ±5%
Category: THT Zener diodes
Description: Diode: Zener; 5W; 14V; CASE017AA; single diode; reel,tape; 1N53xxB
Type of diode: Zener
Power dissipation: 5W
Zener voltage: 14V
Case: CASE017AA
Mounting: THT
Semiconductor structure: single diode
Kind of package: reel; tape
Manufacturer series: 1N53xxB
Tolerance: ±5%
товару немає в наявності
Мінімальне замовлення: 4000 шт
В кошику
од. на суму грн.
| NUF2101MT1G |
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Виробник: ONSEMI
Category: Protection diodes - arrays
Description: Diode: TVS array; bidirectional; TSOP6; Ch: 3; reel,tape
Mounting: SMD
Application: USB
Kind of package: reel; tape
Semiconductor structure: bidirectional
Case: TSOP6
Type of diode: TVS array
Number of channels: 3
Category: Protection diodes - arrays
Description: Diode: TVS array; bidirectional; TSOP6; Ch: 3; reel,tape
Mounting: SMD
Application: USB
Kind of package: reel; tape
Semiconductor structure: bidirectional
Case: TSOP6
Type of diode: TVS array
Number of channels: 3
на замовлення 1520 шт:
термін постачання 14-30 дні (днів)
| Кількість | Ціна без ПДВ |
|---|---|
| 13+ | 36.89 грн |
| 17+ | 26.46 грн |
| 25+ | 24.32 грн |
| 50+ | 22.95 грн |
| 100+ | 21.67 грн |
| 250+ | 20.13 грн |
| 500+ | 19.44 грн |
| NL27WZ16DTT1G |
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Виробник: ONSEMI
Category: Buffers, transceivers, drivers
Description: IC: digital; buffer,non-inverting; Ch: 2; CMOS; SMD; TSOP6
Mounting: SMD
Supply voltage: 1.65...5.5V DC
Type of integrated circuit: digital
Operating temperature: -55...125°C
Technology: CMOS
Case: TSOP6
Kind of integrated circuit: buffer; non-inverting
Number of channels: 2
Category: Buffers, transceivers, drivers
Description: IC: digital; buffer,non-inverting; Ch: 2; CMOS; SMD; TSOP6
Mounting: SMD
Supply voltage: 1.65...5.5V DC
Type of integrated circuit: digital
Operating temperature: -55...125°C
Technology: CMOS
Case: TSOP6
Kind of integrated circuit: buffer; non-inverting
Number of channels: 2
на замовлення 71 шт:
термін постачання 14-30 дні (днів)
| Кількість | Ціна без ПДВ |
|---|---|
| 20+ | 23.98 грн |
| 23+ | 18.76 грн |
| 29+ | 15.25 грн |
| NUP4114HMR6T1G |
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Виробник: ONSEMI
Category: Protection diodes - arrays
Description: Diode: TVS array; 6.5V; 12A; unidirectional; ESD; TSOP6; Ch: 4
Type of diode: TVS array
Breakdown voltage: 6.5V
Semiconductor structure: unidirectional
Mounting: SMD
Case: TSOP6
Max. off-state voltage: 5.5V
Leakage current: 1µA
Number of channels: 4
Application: Ethernet
Kind of package: reel; tape
Max. forward impulse current: 12A
Version: ESD
Category: Protection diodes - arrays
Description: Diode: TVS array; 6.5V; 12A; unidirectional; ESD; TSOP6; Ch: 4
Type of diode: TVS array
Breakdown voltage: 6.5V
Semiconductor structure: unidirectional
Mounting: SMD
Case: TSOP6
Max. off-state voltage: 5.5V
Leakage current: 1µA
Number of channels: 4
Application: Ethernet
Kind of package: reel; tape
Max. forward impulse current: 12A
Version: ESD
на замовлення 2365 шт:
термін постачання 14-30 дні (днів)
| Кількість | Ціна без ПДВ |
|---|---|
| 20+ | 23.06 грн |
| 24+ | 18.50 грн |
| 26+ | 17.04 грн |
| 100+ | 15.50 грн |
| NTGS4141NT1G |
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Виробник: ONSEMI
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 30V; 3.6A; 1W; TSOP6
Case: TSOP6
Mounting: SMD
Kind of package: reel; tape
Power dissipation: 1W
Polarisation: unipolar
Drain current: 3.6A
Kind of channel: enhancement
Drain-source voltage: 30V
Type of transistor: N-MOSFET
Gate-source voltage: ±20V
On-state resistance: 25mΩ
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 30V; 3.6A; 1W; TSOP6
Case: TSOP6
Mounting: SMD
Kind of package: reel; tape
Power dissipation: 1W
Polarisation: unipolar
Drain current: 3.6A
Kind of channel: enhancement
Drain-source voltage: 30V
Type of transistor: N-MOSFET
Gate-source voltage: ±20V
On-state resistance: 25mΩ
на замовлення 4615 шт:
термін постачання 14-30 дні (днів)
| Кількість | Ціна без ПДВ |
|---|---|
| 18+ | 26.75 грн |
| 21+ | 20.73 грн |
| 23+ | 18.84 грн |
| 100+ | 14.73 грн |
| 500+ | 13.10 грн |
| NCV1117STAT3G |
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Виробник: ONSEMI
Category: LDO adjustable voltage regulators
Description: IC: voltage regulator; LDO,linear,adjustable; 1.25÷18.8V; 1A
Type of integrated circuit: voltage regulator
Kind of voltage regulator: adjustable; LDO; linear
Output voltage: 1.25...18.8V
Output current: 1A
Case: SOT223
Mounting: SMD
Kind of package: reel; tape
Number of channels: 1
Application: automotive industry
Category: LDO adjustable voltage regulators
Description: IC: voltage regulator; LDO,linear,adjustable; 1.25÷18.8V; 1A
Type of integrated circuit: voltage regulator
Kind of voltage regulator: adjustable; LDO; linear
Output voltage: 1.25...18.8V
Output current: 1A
Case: SOT223
Mounting: SMD
Kind of package: reel; tape
Number of channels: 1
Application: automotive industry
на замовлення 2914 шт:
термін постачання 14-30 дні (днів)
| Кількість | Ціна без ПДВ |
|---|---|
| 12+ | 40.58 грн |
| 16+ | 26.89 грн |
| 25+ | 23.04 грн |
| 100+ | 19.27 грн |
| 250+ | 17.90 грн |
| 500+ | 17.22 грн |
| 2N6517TA |
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Виробник: ONSEMI
Category: NPN THT transistors
Description: Transistor: NPN; bipolar; 350V; 0.5A; 0.625W; TO92 Formed
Type of transistor: NPN
Polarisation: bipolar
Power dissipation: 0.625W
Case: TO92 Formed
Mounting: THT
Kind of package: Ammo Pack
Frequency: 40...200MHz
Collector current: 0.5A
Collector-emitter voltage: 350V
Current gain: 30...200
Category: NPN THT transistors
Description: Transistor: NPN; bipolar; 350V; 0.5A; 0.625W; TO92 Formed
Type of transistor: NPN
Polarisation: bipolar
Power dissipation: 0.625W
Case: TO92 Formed
Mounting: THT
Kind of package: Ammo Pack
Frequency: 40...200MHz
Collector current: 0.5A
Collector-emitter voltage: 350V
Current gain: 30...200
на замовлення 2065 шт:
термін постачання 14-30 дні (днів)
| Кількість | Ціна без ПДВ |
|---|---|
| 20+ | 23.06 грн |
| 28+ | 15.33 грн |
| 35+ | 12.33 грн |
| 100+ | 8.68 грн |
| 250+ | 6.97 грн |
| 500+ | 5.99 грн |
| 1000+ | 5.21 грн |
| 2000+ | 4.60 грн |




























