Фото | Назва | Виробник | Інформація |
Доступність |
Ціна |
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1N914BTR | ONSEMI |
![]() ![]() Description: Diode: switching; THT; 100V; 0.3A; reel,tape; DO35; 4ns Type of diode: switching Mounting: THT Max. off-state voltage: 100V Load current: 0.3A Reverse recovery time: 4ns Semiconductor structure: single diode Features of semiconductor devices: small signal Case: DO35 Kind of package: reel; tape |
товару немає в наявності |
В кошику од. на суму грн. | |||||||||||||||||||
1N914-T50A | ONSEMI |
![]() Description: Diode: switching; THT; 100V; 0.3A; Ammo Pack; DO35; 4ns Type of diode: switching Mounting: THT Max. off-state voltage: 100V Load current: 0.3A Reverse recovery time: 4ns Semiconductor structure: single diode Features of semiconductor devices: small signal Case: DO35 Kind of package: Ammo Pack |
товару немає в наявності |
В кошику од. на суму грн. | |||||||||||||||||||
1N914ATR | ONSEMI |
![]() ![]() Description: Diode: switching; THT; 100V; 0.3A; reel,tape; DO35; 4ns Type of diode: switching Mounting: THT Max. off-state voltage: 100V Load current: 0.3A Reverse recovery time: 4ns Semiconductor structure: single diode Features of semiconductor devices: small signal Case: DO35 Kind of package: reel; tape |
товару немає в наявності |
В кошику од. на суму грн. | |||||||||||||||||||
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NTR4502PT1G | ONSEMI |
![]() Description: Transistor: P-MOSFET; unipolar; -30V; -1.56A; 1.25W; SOT23 Type of transistor: P-MOSFET Polarisation: unipolar Drain-source voltage: -30V Drain current: -1.56A Power dissipation: 1.25W Case: SOT23 Gate-source voltage: ±20V On-state resistance: 0.35Ω Mounting: SMD Gate charge: 6nC Kind of package: reel; tape Kind of channel: enhancement |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||||||||||||
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NB100LVEP91MNG | ONSEMI |
![]() Description: IC: digital; logic level voltage translator; Ch: 3; SMD; QFN24 Operating temperature: -40...85°C Case: QFN24 Number of inputs: 6 Number of outputs: 6 Frequency: 2GHz Type of integrated circuit: digital Number of channels: 3 Kind of package: tube Manufacturer series: 100LVEP Kind of integrated circuit: logic level voltage translator Mounting: SMD |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||||||||||||
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MMSZ5221BT1G | ONSEMI |
![]() Description: Diode: Zener; 0.5W; 2.4V; SMD; reel,tape; SOD123; single diode Type of diode: Zener Power dissipation: 0.5W Zener voltage: 2.4V Mounting: SMD Tolerance: ±5% Kind of package: reel; tape Case: SOD123 Semiconductor structure: single diode Manufacturer series: MMSZ52xxB |
на замовлення 2295 шт: термін постачання 21-30 дні (днів) |
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MJE253G | ONSEMI |
![]() Description: Transistor: PNP; bipolar; 100V; 4A; 15W; TO225 Type of transistor: PNP Polarisation: bipolar Collector-emitter voltage: 100V Collector current: 4A Power dissipation: 15W Case: TO225 Current gain: 40...180 Mounting: THT Kind of package: bulk Frequency: 40MHz |
на замовлення 429 шт: термін постачання 21-30 дні (днів) |
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NTMFS5C673NLT1G | ONSEMI |
![]() Description: Transistor: N-MOSFET; unipolar; 60V; 35A; 23W; DFN5x6 Type of transistor: N-MOSFET Polarisation: unipolar Drain-source voltage: 60V Drain current: 35A Power dissipation: 23W Case: DFN5x6 Gate-source voltage: ±20V On-state resistance: 9.2mΩ Mounting: SMD Kind of package: reel; tape Kind of channel: enhancement |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||||||||||||
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MJE15031G | ONSEMI |
![]() Description: Transistor: PNP; bipolar; 150V; 8A; 50W; TO220AB Type of transistor: PNP Polarisation: bipolar Collector-emitter voltage: 150V Collector current: 8A Power dissipation: 50W Case: TO220AB Mounting: THT Kind of package: tube Frequency: 70MHz |
на замовлення 1180 шт: термін постачання 21-30 дні (днів) |
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1N4745A-T50A | ONSEMI |
![]() Description: Diode: Zener; 1W; 16V; Ammo Pack; DO41; single diode; 5uA; 1N47xxA Type of diode: Zener Power dissipation: 1W Zener voltage: 16V Case: DO41 Mounting: THT Tolerance: ±5% Semiconductor structure: single diode Leakage current: 5µA Manufacturer series: 1N47xxA Kind of package: Ammo Pack |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||||||||||||
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1N4745ATR | ONSEMI |
![]() Description: Diode: Zener; 1W; 16V; reel,tape; DO41; single diode; 5uA; 1N47xxA Type of diode: Zener Power dissipation: 1W Zener voltage: 16V Case: DO41 Mounting: THT Tolerance: ±5% Semiconductor structure: single diode Leakage current: 5µA Manufacturer series: 1N47xxA Kind of package: reel; tape |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||||||||||||
BC549CTA | ONSEMI |
![]() Description: Transistor: NPN; bipolar; 30V; 0.1A; 0.5W; TO92 Formed Type of transistor: NPN Polarisation: bipolar Collector-emitter voltage: 30V Collector current: 0.1A Power dissipation: 0.5W Case: TO92 Formed Current gain: 420...800 Mounting: THT Kind of package: Ammo Pack Frequency: 300MHz |
товару немає в наявності |
В кошику од. на суму грн. | |||||||||||||||||||
1N5400G | ONSEMI |
![]() ![]() ![]() Description: Diode: rectifying; THT; 50V; 3A; bulk; DO201AD Type of diode: rectifying Mounting: THT Max. off-state voltage: 50V Load current: 3A Semiconductor structure: single diode Kind of package: bulk Case: DO201AD |
товару немає в наявності |
В кошику од. на суму грн. | |||||||||||||||||||
1N5400RLG | ONSEMI |
![]() Description: Diode: rectifying; THT; 50V; 3A; reel,tape; DO201AD Type of diode: rectifying Mounting: THT Max. off-state voltage: 50V Load current: 3A Semiconductor structure: single diode Kind of package: reel; tape Case: DO201AD |
товару немає в наявності |
В кошику од. на суму грн. | |||||||||||||||||||
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BYW51-200G | ONSEMI |
![]() Description: Diode: switching; THT; 200V; 8Ax2; tube; Ifsm: 100A; TO220AB Type of diode: switching Mounting: THT Max. off-state voltage: 200V Load current: 8A x2 Semiconductor structure: common cathode; double Features of semiconductor devices: ultrafast switching Case: TO220AB Max. load current: 16A Max. forward impulse current: 100A Kind of package: tube Heatsink thickness: 1.15...1.39mm |
на замовлення 211 шт: термін постачання 21-30 дні (днів) |
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1N4754A | ONSEMI |
![]() Description: Diode: Zener; 1W; 39V; bulk; DO41; single diode; 5uA; 1N47xxA Type of diode: Zener Power dissipation: 1W Zener voltage: 39V Case: DO41 Mounting: THT Tolerance: ±5% Semiconductor structure: single diode Leakage current: 5µA Manufacturer series: 1N47xxA Kind of package: bulk |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||||||||||||
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1N4750A | ONSEMI |
![]() Description: Diode: Zener; 1W; 27V; bulk; DO41; single diode; 5uA; 1N47xxA Type of diode: Zener Power dissipation: 1W Zener voltage: 27V Kind of package: bulk Case: DO41 Mounting: THT Tolerance: ±5% Semiconductor structure: single diode Leakage current: 5µA Manufacturer series: 1N47xxA |
на замовлення 2935 шт: термін постачання 21-30 дні (днів) |
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1N4750A-T50A | ONSEMI |
![]() Description: Diode: Zener; 1W; 27V; Ammo Pack; DO41; single diode; 5uA; 1N47xxA Type of diode: Zener Power dissipation: 1W Zener voltage: 27V Kind of package: Ammo Pack Case: DO41 Mounting: THT Tolerance: ±5% Semiconductor structure: single diode Leakage current: 5µA Manufacturer series: 1N47xxA |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||||||||||||
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1N4752ATR | ONSEMI |
![]() Description: Diode: Zener; 1W; 33V; reel,tape; DO41; single diode; 5uA; 1N47xxA Type of diode: Zener Power dissipation: 1W Zener voltage: 33V Case: DO41 Mounting: THT Tolerance: ±5% Semiconductor structure: single diode Leakage current: 5µA Manufacturer series: 1N47xxA Kind of package: reel; tape |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||||||||||||
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1N4754A-T50A | ONSEMI |
![]() Description: Diode: Zener; 1W; 39V; Ammo Pack; DO41; single diode; 5uA; 1N47xxA Type of diode: Zener Power dissipation: 1W Zener voltage: 39V Case: DO41 Mounting: THT Tolerance: ±5% Semiconductor structure: single diode Leakage current: 5µA Manufacturer series: 1N47xxA Kind of package: Ammo Pack |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||||||||||||
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1N4755A-T50A | ONSEMI |
![]() Description: Diode: Zener; 1W; 43V; Ammo Pack; DO41; single diode; 5uA; 1N47xxA Type of diode: Zener Power dissipation: 1W Zener voltage: 43V Case: DO41 Mounting: THT Tolerance: ±5% Semiconductor structure: single diode Leakage current: 5µA Manufacturer series: 1N47xxA Kind of package: Ammo Pack |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||||||||||||
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1N4758A-T50A | ONSEMI |
![]() Description: Diode: Zener; 1W; 56V; Ammo Pack; DO41; single diode; 5uA; 1N47xxA Type of diode: Zener Power dissipation: 1W Zener voltage: 56V Case: DO41 Mounting: THT Tolerance: ±5% Semiconductor structure: single diode Leakage current: 5µA Manufacturer series: 1N47xxA Kind of package: Ammo Pack |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||||||||||||
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BZX84C22LT1G | ONSEMI |
![]() Description: Diode: Zener; 0.3W; 22V; SMD; reel,tape; SOT23; single diode; 0.05uA Type of diode: Zener Power dissipation: 0.3W Zener voltage: 22V Mounting: SMD Tolerance: ±5% Kind of package: reel; tape Case: SOT23 Semiconductor structure: single diode Leakage current: 50nA Manufacturer series: BZX84C |
на замовлення 1780 шт: термін постачання 21-30 дні (днів) |
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RFP12N10L | ONSEMI |
![]() ![]() Description: Transistor: N-MOSFET; unipolar; 100V; 12A; 60W; TO220AB Type of transistor: N-MOSFET Polarisation: unipolar Drain-source voltage: 100V Drain current: 12A Power dissipation: 60W Case: TO220AB Gate-source voltage: ±10V On-state resistance: 0.2Ω Mounting: THT Kind of package: tube Kind of channel: enhancement Features of semiconductor devices: logic level |
на замовлення 71 шт: термін постачання 21-30 дні (днів) |
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FQPF22N30 | ONSEMI |
![]() Description: Transistor: N-MOSFET; unipolar; 300V; 7.6A; Idm: 48A; 56W; TO220FP Type of transistor: N-MOSFET Polarisation: unipolar Drain-source voltage: 300V Drain current: 7.6A Pulsed drain current: 48A Power dissipation: 56W Case: TO220FP Gate-source voltage: ±30V On-state resistance: 0.16Ω Mounting: THT Gate charge: 60nC Kind of package: tube Kind of channel: enhancement |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||||||||||||
MBR160RLG | ONSEMI |
![]() Description: Diode: Schottky rectifying; THT; 60V; 1A; DO41; Ufmax: 1V; reel,tape Type of diode: Schottky rectifying Mounting: THT Max. off-state voltage: 60V Load current: 1A Semiconductor structure: single diode Case: DO41 Max. forward voltage: 1V Max. forward impulse current: 25A Kind of package: reel; tape |
товару немає в наявності |
В кошику од. на суму грн. | |||||||||||||||||||
ES2DAF | ONSEMI |
![]() ![]() Description: Diode: rectifying; SMD; 200V; 2A; SMA flat; reel,tape Type of diode: rectifying Mounting: SMD Max. off-state voltage: 200V Load current: 2A Semiconductor structure: single diode Case: SMA flat Kind of package: reel; tape |
товару немає в наявності |
В кошику од. на суму грн. | |||||||||||||||||||
MBR460MFST1G | ONSEMI |
![]() Description: Diode: Schottky rectifying; DFN5x6; SMD; 60V; 4A; reel,tape Type of diode: Schottky rectifying Mounting: SMD Max. off-state voltage: 60V Load current: 4A Semiconductor structure: single diode Case: DFN5x6 Kind of package: reel; tape Max. forward voltage: 0.74V Max. forward impulse current: 40A |
товару немає в наявності |
В кошику од. на суму грн. | |||||||||||||||||||
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MC74VHC1G07DFT1G | ONSEMI |
![]() Description: IC: digital; buffer,non-inverting; Ch: 1; CMOS; SMD; SC88A; VHC; 40uA Type of integrated circuit: digital Kind of integrated circuit: buffer; non-inverting Number of channels: 1 Technology: CMOS Supply voltage: 2...5.5V DC Mounting: SMD Case: SC88A Manufacturer series: VHC Operating temperature: -55...125°C Kind of package: reel; tape Kind of output: open drain Quiescent current: 40µA |
на замовлення 3000 шт: термін постачання 21-30 дні (днів) |
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M74VHC1G135DTT1G | ONSEMI |
![]() Description: IC: digital; NAND; Ch: 1; IN: 2; CMOS; SMD; TSOP5; 2÷5.5VDC; -55÷125°C Type of integrated circuit: digital Number of channels: single; 1 Technology: CMOS Supply voltage: 2...5.5V DC Mounting: SMD Case: TSOP5 Operating temperature: -55...125°C Kind of package: reel; tape Kind of output: open drain Kind of input: with Schmitt trigger Kind of gate: NAND Number of inputs: 2 Family: VHC |
на замовлення 1900 шт: термін постачання 21-30 дні (днів) |
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BCV27 | ONSEMI |
![]() Description: Transistor: NPN; bipolar; Darlington; 30V; 1.2A; 0.35W Type of transistor: NPN Polarisation: bipolar Kind of transistor: Darlington Collector-emitter voltage: 30V Collector current: 1.2A Power dissipation: 0.35W Case: SOT23; TO236AB Mounting: SMD Kind of package: reel; tape Current gain: 10k |
на замовлення 4095 шт: термін постачання 21-30 дні (днів) |
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BC516-D27Z | ONSEMI |
![]() Description: Transistor: PNP; bipolar; Darlington; 30V; 1A; 0.625W; TO92 Type of transistor: PNP Polarisation: bipolar Kind of transistor: Darlington Collector-emitter voltage: 30V Collector current: 1A Power dissipation: 0.625W Case: TO92 Mounting: THT Kind of package: Ammo Pack Frequency: 200MHz |
на замовлення 67 шт: термін постачання 21-30 дні (днів) |
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MUR1100ERLG | ONSEMI |
![]() ![]() Description: Diode: rectifying; THT; 1kV; 1A; reel,tape; Ifsm: 35A; CASE59; 75ns Type of diode: rectifying Mounting: THT Max. off-state voltage: 1kV Load current: 1A Semiconductor structure: single diode Features of semiconductor devices: ultrafast switching Kind of package: reel; tape Max. forward impulse current: 35A Case: CASE59 Reverse recovery time: 75ns |
на замовлення 22 шт: термін постачання 21-30 дні (днів) |
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ESD7241N2T5G | ONSEMI |
![]() Description: Diode: TVS; 25V; bidirectional; X2DFN2; reel,tape Type of diode: TVS Breakdown voltage: 25V Semiconductor structure: bidirectional Mounting: SMD Case: X2DFN2 Max. off-state voltage: 24V Kind of package: reel; tape |
товару немає в наявності |
В кошику од. на суму грн. | |||||||||||||||||||
ESD7205DT5G | ONSEMI |
![]() Description: Diode: TVS; 6V; unidirectional; SOT723; reel,tape Type of diode: TVS Breakdown voltage: 6V Semiconductor structure: unidirectional Mounting: SMD Case: SOT723 Max. off-state voltage: 5V Kind of package: reel; tape |
товару немає в наявності |
В кошику од. на суму грн. | |||||||||||||||||||
SZESD7205WTT1G | ONSEMI |
![]() Description: Diode: TVS array; 5.2÷8V; double,common anode; SC70; reel,tape Type of diode: TVS array Breakdown voltage: 5.2...8V Semiconductor structure: common anode; double Mounting: SMD Case: SC70 Max. off-state voltage: 5V Kind of package: reel; tape Application: automotive industry |
товару немає в наявності |
В кошику од. на суму грн. | |||||||||||||||||||
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MCT62SD | ONSEMI |
![]() Description: Optocoupler; SMD; Ch: 2; OUT: transistor; Uinsul: 5kV; Uce: 85V; DIP8 Type of optocoupler: optocoupler Mounting: SMD Number of channels: 2 Kind of output: transistor Case: DIP8 Turn-off time: 3µs Turn-on time: 3µs Collector-emitter voltage: 85V Insulation voltage: 5kV CTR@If: 100%@5mA Manufacturer series: MCT62 Max. off-state voltage: 3V |
на замовлення 973 шт: термін постачання 21-30 дні (днів) |
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MCT623SD | ONSEMI |
![]() Description: Optocoupler; SMD; Ch: 2; OUT: transistor; Uinsul: 5kV; Uce: 85V; DIP8 Type of optocoupler: optocoupler Mounting: SMD Number of channels: 2 Kind of output: transistor Case: DIP8 Turn-off time: 3µs Turn-on time: 3µs Collector-emitter voltage: 85V Insulation voltage: 5kV CTR@If: 100%@5mA Manufacturer series: MCT62 Max. off-state voltage: 3V |
товару немає в наявності |
В кошику од. на суму грн. | |||||||||||||||||||
US2MA | ONSEMI |
![]() Description: Diode: rectifying; SMD; 1kV; 1.5A; SMA; reel,tape Type of diode: rectifying Mounting: SMD Max. off-state voltage: 1kV Load current: 1.5A Semiconductor structure: single diode Case: SMA Kind of package: reel; tape |
товару немає в наявності |
В кошику од. на суму грн. | |||||||||||||||||||
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FDB035AN06A0 | ONSEMI |
![]() Description: Transistor: N-MOSFET; unipolar; 60V; 80A; 310W; D2PAK Drain-source voltage: 60V Drain current: 80A On-state resistance: 7.1mΩ Type of transistor: N-MOSFET Power dissipation: 310W Polarisation: unipolar Kind of package: reel; tape Gate charge: 124nC Technology: PowerTrench® Kind of channel: enhancement Gate-source voltage: ±20V Mounting: SMD Case: D2PAK |
на замовлення 186 шт: термін постачання 21-30 дні (днів) |
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ESD9C3.3ST5G | ONSEMI |
![]() Description: Diode: TVS; 5V; SOD923; reel,tape; ESD Kind of package: reel; tape Type of diode: TVS Version: ESD Mounting: SMD Case: SOD923 Max. off-state voltage: 3.3V Breakdown voltage: 5V |
на замовлення 8000 шт: термін постачання 21-30 дні (днів) |
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BAT43XV2 | ONSEMI |
![]() Description: Diode: Schottky switching; SOD523; SMD; 30V; 0.2A; reel,tape Type of diode: Schottky switching Case: SOD523 Mounting: SMD Max. off-state voltage: 30V Load current: 0.2A Semiconductor structure: single diode Max. forward voltage: 1V Max. forward impulse current: 4A Kind of package: reel; tape |
товару немає в наявності |
В кошику од. на суму грн. | |||||||||||||||||||
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1N5343BG | ONSEMI |
![]() Description: Diode: Zener; 5W; 7.5V; bulk; CASE017AA; single diode; 10uA; 1N53xxB Type of diode: Zener Power dissipation: 5W Zener voltage: 7.5V Kind of package: bulk Case: CASE017AA Mounting: THT Tolerance: ±5% Semiconductor structure: single diode Leakage current: 10µA Manufacturer series: 1N53xxB |
на замовлення 2073 шт: термін постачання 21-30 дні (днів) |
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1N914TR | ONSEMI |
![]() Description: Diode: switching; THT; 100V; 0.3A; reel,tape; DO35; 4ns Type of diode: switching Mounting: THT Max. off-state voltage: 100V Load current: 0.3A Reverse recovery time: 4ns Semiconductor structure: single diode Case: DO35 Kind of package: reel; tape |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||||||||||||
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2N5195G | ONSEMI |
![]() Description: Transistor: PNP; bipolar; 80V; 4A; 40W; TO225 Case: TO225 Frequency: 2MHz Collector-emitter voltage: 80V Current gain: 20...80 Collector current: 4A Type of transistor: PNP Power dissipation: 40W Polarisation: bipolar Kind of package: bulk Mounting: THT |
на замовлення 358 шт: термін постачання 21-30 дні (днів) |
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ESD9L3.3ST5G | ONSEMI |
![]() Description: Diode: TVS; 0.15W; 4.8V; SOD923; reel,tape; 0.5÷0.9pF; ESD Type of diode: TVS Max. off-state voltage: 3.3V Breakdown voltage: 4.8V Case: SOD923 Mounting: SMD Kind of package: reel; tape Peak pulse power dissipation: 0.15W Leakage current: 1µA Version: ESD Capacitance: 0.5...0.9pF |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||||||||||||
ESD9X3.3ST5G | ONSEMI |
![]() Description: Diode: TVS; 5V; unidirectional; SOD923F; reel,tape Type of diode: TVS Max. off-state voltage: 3.3V Breakdown voltage: 5V Semiconductor structure: unidirectional Case: SOD923F Mounting: SMD Kind of package: reel; tape |
товару немає в наявності |
В кошику од. на суму грн. | |||||||||||||||||||
SZESD9B3.3ST5G | ONSEMI |
![]() Description: Diode: TVS; 5÷7V; bidirectional; SOD923F; reel,tape Type of diode: TVS Max. off-state voltage: 3.3V Breakdown voltage: 5...7V Semiconductor structure: bidirectional Case: SOD923F Mounting: SMD Kind of package: reel; tape Application: automotive industry |
товару немає в наявності |
В кошику од. на суму грн. | |||||||||||||||||||
SZESD9C3.3ST5G | ONSEMI |
![]() Description: Diode: TVS; 5V; unidirectional; SOD923F; reel,tape Type of diode: TVS Max. off-state voltage: 3.3V Breakdown voltage: 5V Semiconductor structure: unidirectional Case: SOD923F Mounting: SMD Kind of package: reel; tape Application: automotive industry |
товару немає в наявності |
В кошику од. на суму грн. | |||||||||||||||||||
SZESD9X3.3ST5G | ONSEMI |
![]() Description: Diode: TVS; 5V; unidirectional; SOD923F; reel,tape Type of diode: TVS Max. off-state voltage: 3.3V Breakdown voltage: 5V Semiconductor structure: unidirectional Case: SOD923F Mounting: SMD Kind of package: reel; tape Application: automotive industry |
товару немає в наявності |
В кошику од. на суму грн. | |||||||||||||||||||
MUR120G | ONSEMI |
![]() Description: Diode: rectifying; THT; 200V; 1A; bulk; DO41 Type of diode: rectifying Mounting: THT Max. off-state voltage: 200V Load current: 1A Semiconductor structure: single diode Kind of package: bulk Case: DO41 |
товару немає в наявності |
В кошику од. на суму грн. | |||||||||||||||||||
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NCP1010ST65T3G | ONSEMI |
![]() Description: IC: PMIC; AC/DC switcher,PWM controller; 100mA; 65kHz; Ch: 1; 23Ω Type of integrated circuit: PMIC Kind of integrated circuit: AC/DC switcher; PWM controller Output current: 0.1A Frequency: 65kHz Mounting: SMD Case: SOT223 Topology: flyback Number of channels: 1 Operating temperature: -40...125°C On-state resistance: 23Ω Operating voltage: 8.5...10V DC Application: SMPS Kind of package: reel; tape Duty cycle factor: 0...72% |
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NCP1011ST130T3G | ONSEMI |
![]() Description: IC: PMIC; AC/DC switcher,PWM controller; 250mA; 130kHz; Ch: 1; 23Ω Type of integrated circuit: PMIC Kind of integrated circuit: AC/DC switcher; PWM controller Output current: 0.25A Frequency: 130kHz Mounting: SMD Case: SOT223 Topology: flyback Number of channels: 1 Operating temperature: -40...125°C On-state resistance: 23Ω Operating voltage: 8.5...10V DC Application: SMPS Kind of package: reel; tape Duty cycle factor: 0...72% |
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NCP1032AMNTXG | ONSEMI |
![]() Description: IC: PMIC; AC/DC switcher,PWM controller; WDFN8; flyback Type of integrated circuit: PMIC Case: WDFN8 Mounting: SMD Operating temperature: -40...125°C Kind of integrated circuit: AC/DC switcher; PWM controller Topology: flyback Operating voltage: 7.55...16V DC Frequency: 275...960kHz On-state resistance: 4.2Ω Number of channels: 1 |
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LM285D-1.2G | ONSEMI |
![]() Description: IC: voltage reference source; 1.235V; ±1%; SO8; tube; 20mA Type of integrated circuit: voltage reference source Reference voltage: 1.235V Tolerance: ±1% Mounting: SMD Case: SO8 Operating temperature: -40...85°C Kind of package: tube Maximum output current: 20mA |
на замовлення 427 шт: термін постачання 21-30 дні (днів) |
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LM285D-1.2R2G | ONSEMI |
![]() Description: IC: voltage reference source; 1.235V; ±1%; SO8; reel,tape; 20mA Type of integrated circuit: voltage reference source Reference voltage: 1.235V Tolerance: ±1% Mounting: SMD Case: SO8 Operating temperature: -40...85°C Kind of package: reel; tape Maximum output current: 20mA |
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BZX84C8V2LT1G | ONSEMI |
![]() Description: Diode: Zener; 0.3W; 8.2V; SMD; reel,tape; SOT23; single diode; 0.7uA Type of diode: Zener Power dissipation: 0.3W Zener voltage: 8.2V Mounting: SMD Tolerance: ±5% Kind of package: reel; tape Case: SOT23 Semiconductor structure: single diode Manufacturer series: BZX84C Leakage current: 0.7µA |
на замовлення 1620 шт: термін постачання 21-30 дні (днів) |
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BB-GEVK | ONSEMI |
![]() Description: Dev.kit: evaluation; prototype board; Comp: FT232BL,NCS36510 Interface: GPIO; I2C; SPI; UART Kit contents: prototype board Components: FT232BL; NCS36510 Kind of connector: pin strips; Pmod socket x2; power supply; USB Type of development kit: evaluation |
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В кошику од. на суму грн. | |||||||||||||||||||
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BAS20LT1G | ONSEMI |
![]() Description: Diode: switching; SMD; 200V; 0.2A; SOT23; Ufmax: 1.25V; reel,tape Type of diode: switching Mounting: SMD Max. off-state voltage: 200V Load current: 0.2A Semiconductor structure: single diode Case: SOT23 Max. forward voltage: 1.25V Kind of package: reel; tape Capacitance: 5pF |
на замовлення 4093 шт: термін постачання 21-30 дні (днів) |
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BAS40LT1G | ONSEMI |
![]() Description: Diode: Schottky switching; SOT23; SMD; 40V; 0.12A; reel,tape Type of diode: Schottky switching Case: SOT23 Mounting: SMD Max. off-state voltage: 40V Load current: 0.12A Semiconductor structure: single diode Max. forward voltage: 1V Kind of package: reel; tape |
на замовлення 4570 шт: термін постачання 21-30 дні (днів) |
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1N914BTR |
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Виробник: ONSEMI
Category: THT universal diodes
Description: Diode: switching; THT; 100V; 0.3A; reel,tape; DO35; 4ns
Type of diode: switching
Mounting: THT
Max. off-state voltage: 100V
Load current: 0.3A
Reverse recovery time: 4ns
Semiconductor structure: single diode
Features of semiconductor devices: small signal
Case: DO35
Kind of package: reel; tape
Category: THT universal diodes
Description: Diode: switching; THT; 100V; 0.3A; reel,tape; DO35; 4ns
Type of diode: switching
Mounting: THT
Max. off-state voltage: 100V
Load current: 0.3A
Reverse recovery time: 4ns
Semiconductor structure: single diode
Features of semiconductor devices: small signal
Case: DO35
Kind of package: reel; tape
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1N914-T50A |
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Виробник: ONSEMI
Category: THT universal diodes
Description: Diode: switching; THT; 100V; 0.3A; Ammo Pack; DO35; 4ns
Type of diode: switching
Mounting: THT
Max. off-state voltage: 100V
Load current: 0.3A
Reverse recovery time: 4ns
Semiconductor structure: single diode
Features of semiconductor devices: small signal
Case: DO35
Kind of package: Ammo Pack
Category: THT universal diodes
Description: Diode: switching; THT; 100V; 0.3A; Ammo Pack; DO35; 4ns
Type of diode: switching
Mounting: THT
Max. off-state voltage: 100V
Load current: 0.3A
Reverse recovery time: 4ns
Semiconductor structure: single diode
Features of semiconductor devices: small signal
Case: DO35
Kind of package: Ammo Pack
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1N914ATR |
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Виробник: ONSEMI
Category: THT universal diodes
Description: Diode: switching; THT; 100V; 0.3A; reel,tape; DO35; 4ns
Type of diode: switching
Mounting: THT
Max. off-state voltage: 100V
Load current: 0.3A
Reverse recovery time: 4ns
Semiconductor structure: single diode
Features of semiconductor devices: small signal
Case: DO35
Kind of package: reel; tape
Category: THT universal diodes
Description: Diode: switching; THT; 100V; 0.3A; reel,tape; DO35; 4ns
Type of diode: switching
Mounting: THT
Max. off-state voltage: 100V
Load current: 0.3A
Reverse recovery time: 4ns
Semiconductor structure: single diode
Features of semiconductor devices: small signal
Case: DO35
Kind of package: reel; tape
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NTR4502PT1G |
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Виробник: ONSEMI
Category: SMD P channel transistors
Description: Transistor: P-MOSFET; unipolar; -30V; -1.56A; 1.25W; SOT23
Type of transistor: P-MOSFET
Polarisation: unipolar
Drain-source voltage: -30V
Drain current: -1.56A
Power dissipation: 1.25W
Case: SOT23
Gate-source voltage: ±20V
On-state resistance: 0.35Ω
Mounting: SMD
Gate charge: 6nC
Kind of package: reel; tape
Kind of channel: enhancement
Category: SMD P channel transistors
Description: Transistor: P-MOSFET; unipolar; -30V; -1.56A; 1.25W; SOT23
Type of transistor: P-MOSFET
Polarisation: unipolar
Drain-source voltage: -30V
Drain current: -1.56A
Power dissipation: 1.25W
Case: SOT23
Gate-source voltage: ±20V
On-state resistance: 0.35Ω
Mounting: SMD
Gate charge: 6nC
Kind of package: reel; tape
Kind of channel: enhancement
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NB100LVEP91MNG |
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Виробник: ONSEMI
Category: Level translators
Description: IC: digital; logic level voltage translator; Ch: 3; SMD; QFN24
Operating temperature: -40...85°C
Case: QFN24
Number of inputs: 6
Number of outputs: 6
Frequency: 2GHz
Type of integrated circuit: digital
Number of channels: 3
Kind of package: tube
Manufacturer series: 100LVEP
Kind of integrated circuit: logic level voltage translator
Mounting: SMD
Category: Level translators
Description: IC: digital; logic level voltage translator; Ch: 3; SMD; QFN24
Operating temperature: -40...85°C
Case: QFN24
Number of inputs: 6
Number of outputs: 6
Frequency: 2GHz
Type of integrated circuit: digital
Number of channels: 3
Kind of package: tube
Manufacturer series: 100LVEP
Kind of integrated circuit: logic level voltage translator
Mounting: SMD
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MMSZ5221BT1G |
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Виробник: ONSEMI
Category: SMD Zener diodes
Description: Diode: Zener; 0.5W; 2.4V; SMD; reel,tape; SOD123; single diode
Type of diode: Zener
Power dissipation: 0.5W
Zener voltage: 2.4V
Mounting: SMD
Tolerance: ±5%
Kind of package: reel; tape
Case: SOD123
Semiconductor structure: single diode
Manufacturer series: MMSZ52xxB
Category: SMD Zener diodes
Description: Diode: Zener; 0.5W; 2.4V; SMD; reel,tape; SOD123; single diode
Type of diode: Zener
Power dissipation: 0.5W
Zener voltage: 2.4V
Mounting: SMD
Tolerance: ±5%
Kind of package: reel; tape
Case: SOD123
Semiconductor structure: single diode
Manufacturer series: MMSZ52xxB
на замовлення 2295 шт:
термін постачання 21-30 дні (днів)Кількість | Ціна |
---|---|
46+ | 9.16 грн |
66+ | 5.88 грн |
101+ | 3.85 грн |
122+ | 3.18 грн |
535+ | 1.69 грн |
1471+ | 1.60 грн |
MJE253G |
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Виробник: ONSEMI
Category: PNP THT transistors
Description: Transistor: PNP; bipolar; 100V; 4A; 15W; TO225
Type of transistor: PNP
Polarisation: bipolar
Collector-emitter voltage: 100V
Collector current: 4A
Power dissipation: 15W
Case: TO225
Current gain: 40...180
Mounting: THT
Kind of package: bulk
Frequency: 40MHz
Category: PNP THT transistors
Description: Transistor: PNP; bipolar; 100V; 4A; 15W; TO225
Type of transistor: PNP
Polarisation: bipolar
Collector-emitter voltage: 100V
Collector current: 4A
Power dissipation: 15W
Case: TO225
Current gain: 40...180
Mounting: THT
Kind of package: bulk
Frequency: 40MHz
на замовлення 429 шт:
термін постачання 21-30 дні (днів)Кількість | Ціна |
---|---|
6+ | 76.61 грн |
10+ | 40.44 грн |
35+ | 26.60 грн |
94+ | 25.13 грн |
NTMFS5C673NLT1G |
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Виробник: ONSEMI
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 60V; 35A; 23W; DFN5x6
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 60V
Drain current: 35A
Power dissipation: 23W
Case: DFN5x6
Gate-source voltage: ±20V
On-state resistance: 9.2mΩ
Mounting: SMD
Kind of package: reel; tape
Kind of channel: enhancement
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 60V; 35A; 23W; DFN5x6
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 60V
Drain current: 35A
Power dissipation: 23W
Case: DFN5x6
Gate-source voltage: ±20V
On-state resistance: 9.2mΩ
Mounting: SMD
Kind of package: reel; tape
Kind of channel: enhancement
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MJE15031G |
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Виробник: ONSEMI
Category: PNP THT transistors
Description: Transistor: PNP; bipolar; 150V; 8A; 50W; TO220AB
Type of transistor: PNP
Polarisation: bipolar
Collector-emitter voltage: 150V
Collector current: 8A
Power dissipation: 50W
Case: TO220AB
Mounting: THT
Kind of package: tube
Frequency: 70MHz
Category: PNP THT transistors
Description: Transistor: PNP; bipolar; 150V; 8A; 50W; TO220AB
Type of transistor: PNP
Polarisation: bipolar
Collector-emitter voltage: 150V
Collector current: 8A
Power dissipation: 50W
Case: TO220AB
Mounting: THT
Kind of package: tube
Frequency: 70MHz
на замовлення 1180 шт:
термін постачання 21-30 дні (днів)Кількість | Ціна |
---|---|
4+ | 134.91 грн |
10+ | 98.21 грн |
14+ | 68.82 грн |
37+ | 64.96 грн |
100+ | 62.64 грн |
1N4745A-T50A |
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Виробник: ONSEMI
Category: THT Zener diodes
Description: Diode: Zener; 1W; 16V; Ammo Pack; DO41; single diode; 5uA; 1N47xxA
Type of diode: Zener
Power dissipation: 1W
Zener voltage: 16V
Case: DO41
Mounting: THT
Tolerance: ±5%
Semiconductor structure: single diode
Leakage current: 5µA
Manufacturer series: 1N47xxA
Kind of package: Ammo Pack
Category: THT Zener diodes
Description: Diode: Zener; 1W; 16V; Ammo Pack; DO41; single diode; 5uA; 1N47xxA
Type of diode: Zener
Power dissipation: 1W
Zener voltage: 16V
Case: DO41
Mounting: THT
Tolerance: ±5%
Semiconductor structure: single diode
Leakage current: 5µA
Manufacturer series: 1N47xxA
Kind of package: Ammo Pack
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1N4745ATR |
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Виробник: ONSEMI
Category: THT Zener diodes
Description: Diode: Zener; 1W; 16V; reel,tape; DO41; single diode; 5uA; 1N47xxA
Type of diode: Zener
Power dissipation: 1W
Zener voltage: 16V
Case: DO41
Mounting: THT
Tolerance: ±5%
Semiconductor structure: single diode
Leakage current: 5µA
Manufacturer series: 1N47xxA
Kind of package: reel; tape
Category: THT Zener diodes
Description: Diode: Zener; 1W; 16V; reel,tape; DO41; single diode; 5uA; 1N47xxA
Type of diode: Zener
Power dissipation: 1W
Zener voltage: 16V
Case: DO41
Mounting: THT
Tolerance: ±5%
Semiconductor structure: single diode
Leakage current: 5µA
Manufacturer series: 1N47xxA
Kind of package: reel; tape
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BC549CTA |
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Виробник: ONSEMI
Category: NPN THT transistors
Description: Transistor: NPN; bipolar; 30V; 0.1A; 0.5W; TO92 Formed
Type of transistor: NPN
Polarisation: bipolar
Collector-emitter voltage: 30V
Collector current: 0.1A
Power dissipation: 0.5W
Case: TO92 Formed
Current gain: 420...800
Mounting: THT
Kind of package: Ammo Pack
Frequency: 300MHz
Category: NPN THT transistors
Description: Transistor: NPN; bipolar; 30V; 0.1A; 0.5W; TO92 Formed
Type of transistor: NPN
Polarisation: bipolar
Collector-emitter voltage: 30V
Collector current: 0.1A
Power dissipation: 0.5W
Case: TO92 Formed
Current gain: 420...800
Mounting: THT
Kind of package: Ammo Pack
Frequency: 300MHz
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1N5400G |
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Виробник: ONSEMI
Category: THT universal diodes
Description: Diode: rectifying; THT; 50V; 3A; bulk; DO201AD
Type of diode: rectifying
Mounting: THT
Max. off-state voltage: 50V
Load current: 3A
Semiconductor structure: single diode
Kind of package: bulk
Case: DO201AD
Category: THT universal diodes
Description: Diode: rectifying; THT; 50V; 3A; bulk; DO201AD
Type of diode: rectifying
Mounting: THT
Max. off-state voltage: 50V
Load current: 3A
Semiconductor structure: single diode
Kind of package: bulk
Case: DO201AD
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1N5400RLG |
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Виробник: ONSEMI
Category: THT universal diodes
Description: Diode: rectifying; THT; 50V; 3A; reel,tape; DO201AD
Type of diode: rectifying
Mounting: THT
Max. off-state voltage: 50V
Load current: 3A
Semiconductor structure: single diode
Kind of package: reel; tape
Case: DO201AD
Category: THT universal diodes
Description: Diode: rectifying; THT; 50V; 3A; reel,tape; DO201AD
Type of diode: rectifying
Mounting: THT
Max. off-state voltage: 50V
Load current: 3A
Semiconductor structure: single diode
Kind of package: reel; tape
Case: DO201AD
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BYW51-200G |
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Виробник: ONSEMI
Category: THT universal diodes
Description: Diode: switching; THT; 200V; 8Ax2; tube; Ifsm: 100A; TO220AB
Type of diode: switching
Mounting: THT
Max. off-state voltage: 200V
Load current: 8A x2
Semiconductor structure: common cathode; double
Features of semiconductor devices: ultrafast switching
Case: TO220AB
Max. load current: 16A
Max. forward impulse current: 100A
Kind of package: tube
Heatsink thickness: 1.15...1.39mm
Category: THT universal diodes
Description: Diode: switching; THT; 200V; 8Ax2; tube; Ifsm: 100A; TO220AB
Type of diode: switching
Mounting: THT
Max. off-state voltage: 200V
Load current: 8A x2
Semiconductor structure: common cathode; double
Features of semiconductor devices: ultrafast switching
Case: TO220AB
Max. load current: 16A
Max. forward impulse current: 100A
Kind of package: tube
Heatsink thickness: 1.15...1.39mm
на замовлення 211 шт:
термін постачання 21-30 дні (днів)Кількість | Ціна |
---|---|
4+ | 121.58 грн |
5+ | 88.15 грн |
10+ | 78.87 грн |
14+ | 68.05 грн |
37+ | 64.18 грн |
1N4754A |
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Виробник: ONSEMI
Category: THT Zener diodes
Description: Diode: Zener; 1W; 39V; bulk; DO41; single diode; 5uA; 1N47xxA
Type of diode: Zener
Power dissipation: 1W
Zener voltage: 39V
Case: DO41
Mounting: THT
Tolerance: ±5%
Semiconductor structure: single diode
Leakage current: 5µA
Manufacturer series: 1N47xxA
Kind of package: bulk
Category: THT Zener diodes
Description: Diode: Zener; 1W; 39V; bulk; DO41; single diode; 5uA; 1N47xxA
Type of diode: Zener
Power dissipation: 1W
Zener voltage: 39V
Case: DO41
Mounting: THT
Tolerance: ±5%
Semiconductor structure: single diode
Leakage current: 5µA
Manufacturer series: 1N47xxA
Kind of package: bulk
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1N4750A |
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Виробник: ONSEMI
Category: THT Zener diodes
Description: Diode: Zener; 1W; 27V; bulk; DO41; single diode; 5uA; 1N47xxA
Type of diode: Zener
Power dissipation: 1W
Zener voltage: 27V
Kind of package: bulk
Case: DO41
Mounting: THT
Tolerance: ±5%
Semiconductor structure: single diode
Leakage current: 5µA
Manufacturer series: 1N47xxA
Category: THT Zener diodes
Description: Diode: Zener; 1W; 27V; bulk; DO41; single diode; 5uA; 1N47xxA
Type of diode: Zener
Power dissipation: 1W
Zener voltage: 27V
Kind of package: bulk
Case: DO41
Mounting: THT
Tolerance: ±5%
Semiconductor structure: single diode
Leakage current: 5µA
Manufacturer series: 1N47xxA
на замовлення 2935 шт:
термін постачання 21-30 дні (днів)Кількість | Ціна |
---|---|
36+ | 11.66 грн |
58+ | 6.73 грн |
73+ | 5.35 грн |
101+ | 3.86 грн |
340+ | 2.67 грн |
934+ | 2.52 грн |
1N4750A-T50A |
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Виробник: ONSEMI
Category: THT Zener diodes
Description: Diode: Zener; 1W; 27V; Ammo Pack; DO41; single diode; 5uA; 1N47xxA
Type of diode: Zener
Power dissipation: 1W
Zener voltage: 27V
Kind of package: Ammo Pack
Case: DO41
Mounting: THT
Tolerance: ±5%
Semiconductor structure: single diode
Leakage current: 5µA
Manufacturer series: 1N47xxA
Category: THT Zener diodes
Description: Diode: Zener; 1W; 27V; Ammo Pack; DO41; single diode; 5uA; 1N47xxA
Type of diode: Zener
Power dissipation: 1W
Zener voltage: 27V
Kind of package: Ammo Pack
Case: DO41
Mounting: THT
Tolerance: ±5%
Semiconductor structure: single diode
Leakage current: 5µA
Manufacturer series: 1N47xxA
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1N4752ATR |
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Виробник: ONSEMI
Category: THT Zener diodes
Description: Diode: Zener; 1W; 33V; reel,tape; DO41; single diode; 5uA; 1N47xxA
Type of diode: Zener
Power dissipation: 1W
Zener voltage: 33V
Case: DO41
Mounting: THT
Tolerance: ±5%
Semiconductor structure: single diode
Leakage current: 5µA
Manufacturer series: 1N47xxA
Kind of package: reel; tape
Category: THT Zener diodes
Description: Diode: Zener; 1W; 33V; reel,tape; DO41; single diode; 5uA; 1N47xxA
Type of diode: Zener
Power dissipation: 1W
Zener voltage: 33V
Case: DO41
Mounting: THT
Tolerance: ±5%
Semiconductor structure: single diode
Leakage current: 5µA
Manufacturer series: 1N47xxA
Kind of package: reel; tape
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1N4754A-T50A |
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Виробник: ONSEMI
Category: THT Zener diodes
Description: Diode: Zener; 1W; 39V; Ammo Pack; DO41; single diode; 5uA; 1N47xxA
Type of diode: Zener
Power dissipation: 1W
Zener voltage: 39V
Case: DO41
Mounting: THT
Tolerance: ±5%
Semiconductor structure: single diode
Leakage current: 5µA
Manufacturer series: 1N47xxA
Kind of package: Ammo Pack
Category: THT Zener diodes
Description: Diode: Zener; 1W; 39V; Ammo Pack; DO41; single diode; 5uA; 1N47xxA
Type of diode: Zener
Power dissipation: 1W
Zener voltage: 39V
Case: DO41
Mounting: THT
Tolerance: ±5%
Semiconductor structure: single diode
Leakage current: 5µA
Manufacturer series: 1N47xxA
Kind of package: Ammo Pack
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1N4755A-T50A |
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Виробник: ONSEMI
Category: THT Zener diodes
Description: Diode: Zener; 1W; 43V; Ammo Pack; DO41; single diode; 5uA; 1N47xxA
Type of diode: Zener
Power dissipation: 1W
Zener voltage: 43V
Case: DO41
Mounting: THT
Tolerance: ±5%
Semiconductor structure: single diode
Leakage current: 5µA
Manufacturer series: 1N47xxA
Kind of package: Ammo Pack
Category: THT Zener diodes
Description: Diode: Zener; 1W; 43V; Ammo Pack; DO41; single diode; 5uA; 1N47xxA
Type of diode: Zener
Power dissipation: 1W
Zener voltage: 43V
Case: DO41
Mounting: THT
Tolerance: ±5%
Semiconductor structure: single diode
Leakage current: 5µA
Manufacturer series: 1N47xxA
Kind of package: Ammo Pack
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1N4758A-T50A |
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Виробник: ONSEMI
Category: THT Zener diodes
Description: Diode: Zener; 1W; 56V; Ammo Pack; DO41; single diode; 5uA; 1N47xxA
Type of diode: Zener
Power dissipation: 1W
Zener voltage: 56V
Case: DO41
Mounting: THT
Tolerance: ±5%
Semiconductor structure: single diode
Leakage current: 5µA
Manufacturer series: 1N47xxA
Kind of package: Ammo Pack
Category: THT Zener diodes
Description: Diode: Zener; 1W; 56V; Ammo Pack; DO41; single diode; 5uA; 1N47xxA
Type of diode: Zener
Power dissipation: 1W
Zener voltage: 56V
Case: DO41
Mounting: THT
Tolerance: ±5%
Semiconductor structure: single diode
Leakage current: 5µA
Manufacturer series: 1N47xxA
Kind of package: Ammo Pack
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BZX84C22LT1G |
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Виробник: ONSEMI
Category: SMD Zener diodes
Description: Diode: Zener; 0.3W; 22V; SMD; reel,tape; SOT23; single diode; 0.05uA
Type of diode: Zener
Power dissipation: 0.3W
Zener voltage: 22V
Mounting: SMD
Tolerance: ±5%
Kind of package: reel; tape
Case: SOT23
Semiconductor structure: single diode
Leakage current: 50nA
Manufacturer series: BZX84C
Category: SMD Zener diodes
Description: Diode: Zener; 0.3W; 22V; SMD; reel,tape; SOT23; single diode; 0.05uA
Type of diode: Zener
Power dissipation: 0.3W
Zener voltage: 22V
Mounting: SMD
Tolerance: ±5%
Kind of package: reel; tape
Case: SOT23
Semiconductor structure: single diode
Leakage current: 50nA
Manufacturer series: BZX84C
на замовлення 1780 шт:
термін постачання 21-30 дні (днів)Кількість | Ціна |
---|---|
56+ | 7.52 грн |
97+ | 4.02 грн |
174+ | 2.23 грн |
730+ | 1.24 грн |
RFP12N10L | ![]() |
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Виробник: ONSEMI
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 100V; 12A; 60W; TO220AB
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 100V
Drain current: 12A
Power dissipation: 60W
Case: TO220AB
Gate-source voltage: ±10V
On-state resistance: 0.2Ω
Mounting: THT
Kind of package: tube
Kind of channel: enhancement
Features of semiconductor devices: logic level
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 100V; 12A; 60W; TO220AB
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 100V
Drain current: 12A
Power dissipation: 60W
Case: TO220AB
Gate-source voltage: ±10V
On-state resistance: 0.2Ω
Mounting: THT
Kind of package: tube
Kind of channel: enhancement
Features of semiconductor devices: logic level
на замовлення 71 шт:
термін постачання 21-30 дні (днів)Кількість | Ціна |
---|---|
4+ | 104.09 грн |
10+ | 57.30 грн |
20+ | 45.78 грн |
50+ | 45.70 грн |
55+ | 43.23 грн |
FQPF22N30 |
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Виробник: ONSEMI
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 300V; 7.6A; Idm: 48A; 56W; TO220FP
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 300V
Drain current: 7.6A
Pulsed drain current: 48A
Power dissipation: 56W
Case: TO220FP
Gate-source voltage: ±30V
On-state resistance: 0.16Ω
Mounting: THT
Gate charge: 60nC
Kind of package: tube
Kind of channel: enhancement
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 300V; 7.6A; Idm: 48A; 56W; TO220FP
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 300V
Drain current: 7.6A
Pulsed drain current: 48A
Power dissipation: 56W
Case: TO220FP
Gate-source voltage: ±30V
On-state resistance: 0.16Ω
Mounting: THT
Gate charge: 60nC
Kind of package: tube
Kind of channel: enhancement
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MBR160RLG |
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Виробник: ONSEMI
Category: THT Schottky diodes
Description: Diode: Schottky rectifying; THT; 60V; 1A; DO41; Ufmax: 1V; reel,tape
Type of diode: Schottky rectifying
Mounting: THT
Max. off-state voltage: 60V
Load current: 1A
Semiconductor structure: single diode
Case: DO41
Max. forward voltage: 1V
Max. forward impulse current: 25A
Kind of package: reel; tape
Category: THT Schottky diodes
Description: Diode: Schottky rectifying; THT; 60V; 1A; DO41; Ufmax: 1V; reel,tape
Type of diode: Schottky rectifying
Mounting: THT
Max. off-state voltage: 60V
Load current: 1A
Semiconductor structure: single diode
Case: DO41
Max. forward voltage: 1V
Max. forward impulse current: 25A
Kind of package: reel; tape
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ES2DAF |
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Виробник: ONSEMI
Category: SMD universal diodes
Description: Diode: rectifying; SMD; 200V; 2A; SMA flat; reel,tape
Type of diode: rectifying
Mounting: SMD
Max. off-state voltage: 200V
Load current: 2A
Semiconductor structure: single diode
Case: SMA flat
Kind of package: reel; tape
Category: SMD universal diodes
Description: Diode: rectifying; SMD; 200V; 2A; SMA flat; reel,tape
Type of diode: rectifying
Mounting: SMD
Max. off-state voltage: 200V
Load current: 2A
Semiconductor structure: single diode
Case: SMA flat
Kind of package: reel; tape
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MBR460MFST1G |
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Виробник: ONSEMI
Category: SMD Schottky diodes
Description: Diode: Schottky rectifying; DFN5x6; SMD; 60V; 4A; reel,tape
Type of diode: Schottky rectifying
Mounting: SMD
Max. off-state voltage: 60V
Load current: 4A
Semiconductor structure: single diode
Case: DFN5x6
Kind of package: reel; tape
Max. forward voltage: 0.74V
Max. forward impulse current: 40A
Category: SMD Schottky diodes
Description: Diode: Schottky rectifying; DFN5x6; SMD; 60V; 4A; reel,tape
Type of diode: Schottky rectifying
Mounting: SMD
Max. off-state voltage: 60V
Load current: 4A
Semiconductor structure: single diode
Case: DFN5x6
Kind of package: reel; tape
Max. forward voltage: 0.74V
Max. forward impulse current: 40A
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MC74VHC1G07DFT1G |
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Виробник: ONSEMI
Category: Buffers, transceivers, drivers
Description: IC: digital; buffer,non-inverting; Ch: 1; CMOS; SMD; SC88A; VHC; 40uA
Type of integrated circuit: digital
Kind of integrated circuit: buffer; non-inverting
Number of channels: 1
Technology: CMOS
Supply voltage: 2...5.5V DC
Mounting: SMD
Case: SC88A
Manufacturer series: VHC
Operating temperature: -55...125°C
Kind of package: reel; tape
Kind of output: open drain
Quiescent current: 40µA
Category: Buffers, transceivers, drivers
Description: IC: digital; buffer,non-inverting; Ch: 1; CMOS; SMD; SC88A; VHC; 40uA
Type of integrated circuit: digital
Kind of integrated circuit: buffer; non-inverting
Number of channels: 1
Technology: CMOS
Supply voltage: 2...5.5V DC
Mounting: SMD
Case: SC88A
Manufacturer series: VHC
Operating temperature: -55...125°C
Kind of package: reel; tape
Kind of output: open drain
Quiescent current: 40µA
на замовлення 3000 шт:
термін постачання 21-30 дні (днів)Кількість | Ціна |
---|---|
31+ | 13.82 грн |
34+ | 11.44 грн |
94+ | 9.74 грн |
250+ | 9.51 грн |
257+ | 9.28 грн |
1000+ | 8.82 грн |
M74VHC1G135DTT1G |
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Виробник: ONSEMI
Category: Gates, inverters
Description: IC: digital; NAND; Ch: 1; IN: 2; CMOS; SMD; TSOP5; 2÷5.5VDC; -55÷125°C
Type of integrated circuit: digital
Number of channels: single; 1
Technology: CMOS
Supply voltage: 2...5.5V DC
Mounting: SMD
Case: TSOP5
Operating temperature: -55...125°C
Kind of package: reel; tape
Kind of output: open drain
Kind of input: with Schmitt trigger
Kind of gate: NAND
Number of inputs: 2
Family: VHC
Category: Gates, inverters
Description: IC: digital; NAND; Ch: 1; IN: 2; CMOS; SMD; TSOP5; 2÷5.5VDC; -55÷125°C
Type of integrated circuit: digital
Number of channels: single; 1
Technology: CMOS
Supply voltage: 2...5.5V DC
Mounting: SMD
Case: TSOP5
Operating temperature: -55...125°C
Kind of package: reel; tape
Kind of output: open drain
Kind of input: with Schmitt trigger
Kind of gate: NAND
Number of inputs: 2
Family: VHC
на замовлення 1900 шт:
термін постачання 21-30 дні (днів)Кількість | Ціна |
---|---|
50+ | 9.24 грн |
60+ | 6.65 грн |
165+ | 5.72 грн |
250+ | 5.64 грн |
445+ | 5.41 грн |
1000+ | 4.72 грн |
BCV27 |
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Виробник: ONSEMI
Category: NPN SMD Darlington transistors
Description: Transistor: NPN; bipolar; Darlington; 30V; 1.2A; 0.35W
Type of transistor: NPN
Polarisation: bipolar
Kind of transistor: Darlington
Collector-emitter voltage: 30V
Collector current: 1.2A
Power dissipation: 0.35W
Case: SOT23; TO236AB
Mounting: SMD
Kind of package: reel; tape
Current gain: 10k
Category: NPN SMD Darlington transistors
Description: Transistor: NPN; bipolar; Darlington; 30V; 1.2A; 0.35W
Type of transistor: NPN
Polarisation: bipolar
Kind of transistor: Darlington
Collector-emitter voltage: 30V
Collector current: 1.2A
Power dissipation: 0.35W
Case: SOT23; TO236AB
Mounting: SMD
Kind of package: reel; tape
Current gain: 10k
на замовлення 4095 шт:
термін постачання 21-30 дні (днів)Кількість | Ціна |
---|---|
30+ | 14.16 грн |
45+ | 8.66 грн |
75+ | 6.16 грн |
300+ | 4.78 грн |
304+ | 2.98 грн |
836+ | 2.82 грн |
BC516-D27Z |
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Виробник: ONSEMI
Category: PNP THT Darlington transistors
Description: Transistor: PNP; bipolar; Darlington; 30V; 1A; 0.625W; TO92
Type of transistor: PNP
Polarisation: bipolar
Kind of transistor: Darlington
Collector-emitter voltage: 30V
Collector current: 1A
Power dissipation: 0.625W
Case: TO92
Mounting: THT
Kind of package: Ammo Pack
Frequency: 200MHz
Category: PNP THT Darlington transistors
Description: Transistor: PNP; bipolar; Darlington; 30V; 1A; 0.625W; TO92
Type of transistor: PNP
Polarisation: bipolar
Kind of transistor: Darlington
Collector-emitter voltage: 30V
Collector current: 1A
Power dissipation: 0.625W
Case: TO92
Mounting: THT
Kind of package: Ammo Pack
Frequency: 200MHz
на замовлення 67 шт:
термін постачання 21-30 дні (днів)Кількість | Ціна |
---|---|
17+ | 25.82 грн |
29+ | 13.76 грн |
32+ | 12.14 грн |
50+ | 9.36 грн |
MUR1100ERLG | ![]() |
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Виробник: ONSEMI
Category: THT universal diodes
Description: Diode: rectifying; THT; 1kV; 1A; reel,tape; Ifsm: 35A; CASE59; 75ns
Type of diode: rectifying
Mounting: THT
Max. off-state voltage: 1kV
Load current: 1A
Semiconductor structure: single diode
Features of semiconductor devices: ultrafast switching
Kind of package: reel; tape
Max. forward impulse current: 35A
Case: CASE59
Reverse recovery time: 75ns
Category: THT universal diodes
Description: Diode: rectifying; THT; 1kV; 1A; reel,tape; Ifsm: 35A; CASE59; 75ns
Type of diode: rectifying
Mounting: THT
Max. off-state voltage: 1kV
Load current: 1A
Semiconductor structure: single diode
Features of semiconductor devices: ultrafast switching
Kind of package: reel; tape
Max. forward impulse current: 35A
Case: CASE59
Reverse recovery time: 75ns
на замовлення 22 шт:
термін постачання 21-30 дні (днів)Кількість | Ціна |
---|---|
8+ | 58.29 грн |
10+ | 39.82 грн |
ESD7241N2T5G |
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Виробник: ONSEMI
Category: Bidirectional TVS SMD diodes
Description: Diode: TVS; 25V; bidirectional; X2DFN2; reel,tape
Type of diode: TVS
Breakdown voltage: 25V
Semiconductor structure: bidirectional
Mounting: SMD
Case: X2DFN2
Max. off-state voltage: 24V
Kind of package: reel; tape
Category: Bidirectional TVS SMD diodes
Description: Diode: TVS; 25V; bidirectional; X2DFN2; reel,tape
Type of diode: TVS
Breakdown voltage: 25V
Semiconductor structure: bidirectional
Mounting: SMD
Case: X2DFN2
Max. off-state voltage: 24V
Kind of package: reel; tape
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ESD7205DT5G |
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Виробник: ONSEMI
Category: Unidirectional TVS SMD diodes
Description: Diode: TVS; 6V; unidirectional; SOT723; reel,tape
Type of diode: TVS
Breakdown voltage: 6V
Semiconductor structure: unidirectional
Mounting: SMD
Case: SOT723
Max. off-state voltage: 5V
Kind of package: reel; tape
Category: Unidirectional TVS SMD diodes
Description: Diode: TVS; 6V; unidirectional; SOT723; reel,tape
Type of diode: TVS
Breakdown voltage: 6V
Semiconductor structure: unidirectional
Mounting: SMD
Case: SOT723
Max. off-state voltage: 5V
Kind of package: reel; tape
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SZESD7205WTT1G |
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Виробник: ONSEMI
Category: Protection diodes - arrays
Description: Diode: TVS array; 5.2÷8V; double,common anode; SC70; reel,tape
Type of diode: TVS array
Breakdown voltage: 5.2...8V
Semiconductor structure: common anode; double
Mounting: SMD
Case: SC70
Max. off-state voltage: 5V
Kind of package: reel; tape
Application: automotive industry
Category: Protection diodes - arrays
Description: Diode: TVS array; 5.2÷8V; double,common anode; SC70; reel,tape
Type of diode: TVS array
Breakdown voltage: 5.2...8V
Semiconductor structure: common anode; double
Mounting: SMD
Case: SC70
Max. off-state voltage: 5V
Kind of package: reel; tape
Application: automotive industry
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MCT62SD |
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Виробник: ONSEMI
Category: Optocouplers - analog output
Description: Optocoupler; SMD; Ch: 2; OUT: transistor; Uinsul: 5kV; Uce: 85V; DIP8
Type of optocoupler: optocoupler
Mounting: SMD
Number of channels: 2
Kind of output: transistor
Case: DIP8
Turn-off time: 3µs
Turn-on time: 3µs
Collector-emitter voltage: 85V
Insulation voltage: 5kV
CTR@If: 100%@5mA
Manufacturer series: MCT62
Max. off-state voltage: 3V
Category: Optocouplers - analog output
Description: Optocoupler; SMD; Ch: 2; OUT: transistor; Uinsul: 5kV; Uce: 85V; DIP8
Type of optocoupler: optocoupler
Mounting: SMD
Number of channels: 2
Kind of output: transistor
Case: DIP8
Turn-off time: 3µs
Turn-on time: 3µs
Collector-emitter voltage: 85V
Insulation voltage: 5kV
CTR@If: 100%@5mA
Manufacturer series: MCT62
Max. off-state voltage: 3V
на замовлення 973 шт:
термін постачання 21-30 дні (днів)Кількість | Ціна |
---|---|
6+ | 80.78 грн |
10+ | 47.87 грн |
24+ | 37.97 грн |
66+ | 35.88 грн |
MCT623SD |
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Виробник: ONSEMI
Category: Optocouplers - analog output
Description: Optocoupler; SMD; Ch: 2; OUT: transistor; Uinsul: 5kV; Uce: 85V; DIP8
Type of optocoupler: optocoupler
Mounting: SMD
Number of channels: 2
Kind of output: transistor
Case: DIP8
Turn-off time: 3µs
Turn-on time: 3µs
Collector-emitter voltage: 85V
Insulation voltage: 5kV
CTR@If: 100%@5mA
Manufacturer series: MCT62
Max. off-state voltage: 3V
Category: Optocouplers - analog output
Description: Optocoupler; SMD; Ch: 2; OUT: transistor; Uinsul: 5kV; Uce: 85V; DIP8
Type of optocoupler: optocoupler
Mounting: SMD
Number of channels: 2
Kind of output: transistor
Case: DIP8
Turn-off time: 3µs
Turn-on time: 3µs
Collector-emitter voltage: 85V
Insulation voltage: 5kV
CTR@If: 100%@5mA
Manufacturer series: MCT62
Max. off-state voltage: 3V
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US2MA |
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Виробник: ONSEMI
Category: SMD universal diodes
Description: Diode: rectifying; SMD; 1kV; 1.5A; SMA; reel,tape
Type of diode: rectifying
Mounting: SMD
Max. off-state voltage: 1kV
Load current: 1.5A
Semiconductor structure: single diode
Case: SMA
Kind of package: reel; tape
Category: SMD universal diodes
Description: Diode: rectifying; SMD; 1kV; 1.5A; SMA; reel,tape
Type of diode: rectifying
Mounting: SMD
Max. off-state voltage: 1kV
Load current: 1.5A
Semiconductor structure: single diode
Case: SMA
Kind of package: reel; tape
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FDB035AN06A0 |
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Виробник: ONSEMI
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 60V; 80A; 310W; D2PAK
Drain-source voltage: 60V
Drain current: 80A
On-state resistance: 7.1mΩ
Type of transistor: N-MOSFET
Power dissipation: 310W
Polarisation: unipolar
Kind of package: reel; tape
Gate charge: 124nC
Technology: PowerTrench®
Kind of channel: enhancement
Gate-source voltage: ±20V
Mounting: SMD
Case: D2PAK
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 60V; 80A; 310W; D2PAK
Drain-source voltage: 60V
Drain current: 80A
On-state resistance: 7.1mΩ
Type of transistor: N-MOSFET
Power dissipation: 310W
Polarisation: unipolar
Kind of package: reel; tape
Gate charge: 124nC
Technology: PowerTrench®
Kind of channel: enhancement
Gate-source voltage: ±20V
Mounting: SMD
Case: D2PAK
на замовлення 186 шт:
термін постачання 21-30 дні (днів)Кількість | Ціна |
---|---|
2+ | 377.24 грн |
4+ | 276.83 грн |
9+ | 261.37 грн |
50+ | 260.59 грн |
100+ | 251.31 грн |
ESD9C3.3ST5G |
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Виробник: ONSEMI
Category: Unidirectional TVS SMD diodes
Description: Diode: TVS; 5V; SOD923; reel,tape; ESD
Kind of package: reel; tape
Type of diode: TVS
Version: ESD
Mounting: SMD
Case: SOD923
Max. off-state voltage: 3.3V
Breakdown voltage: 5V
Category: Unidirectional TVS SMD diodes
Description: Diode: TVS; 5V; SOD923; reel,tape; ESD
Kind of package: reel; tape
Type of diode: TVS
Version: ESD
Mounting: SMD
Case: SOD923
Max. off-state voltage: 3.3V
Breakdown voltage: 5V
на замовлення 8000 шт:
термін постачання 21-30 дні (днів)Кількість | Ціна |
---|---|
32+ | 13.32 грн |
48+ | 8.12 грн |
62+ | 6.25 грн |
100+ | 4.26 грн |
303+ | 2.98 грн |
833+ | 2.82 грн |
5000+ | 2.71 грн |
BAT43XV2 |
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Виробник: ONSEMI
Category: SMD Schottky diodes
Description: Diode: Schottky switching; SOD523; SMD; 30V; 0.2A; reel,tape
Type of diode: Schottky switching
Case: SOD523
Mounting: SMD
Max. off-state voltage: 30V
Load current: 0.2A
Semiconductor structure: single diode
Max. forward voltage: 1V
Max. forward impulse current: 4A
Kind of package: reel; tape
Category: SMD Schottky diodes
Description: Diode: Schottky switching; SOD523; SMD; 30V; 0.2A; reel,tape
Type of diode: Schottky switching
Case: SOD523
Mounting: SMD
Max. off-state voltage: 30V
Load current: 0.2A
Semiconductor structure: single diode
Max. forward voltage: 1V
Max. forward impulse current: 4A
Kind of package: reel; tape
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1N5343BG |
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Виробник: ONSEMI
Category: THT Zener diodes
Description: Diode: Zener; 5W; 7.5V; bulk; CASE017AA; single diode; 10uA; 1N53xxB
Type of diode: Zener
Power dissipation: 5W
Zener voltage: 7.5V
Kind of package: bulk
Case: CASE017AA
Mounting: THT
Tolerance: ±5%
Semiconductor structure: single diode
Leakage current: 10µA
Manufacturer series: 1N53xxB
Category: THT Zener diodes
Description: Diode: Zener; 5W; 7.5V; bulk; CASE017AA; single diode; 10uA; 1N53xxB
Type of diode: Zener
Power dissipation: 5W
Zener voltage: 7.5V
Kind of package: bulk
Case: CASE017AA
Mounting: THT
Tolerance: ±5%
Semiconductor structure: single diode
Leakage current: 10µA
Manufacturer series: 1N53xxB
на замовлення 2073 шт:
термін постачання 21-30 дні (днів)Кількість | Ціна |
---|---|
9+ | 51.63 грн |
12+ | 34.02 грн |
14+ | 29.23 грн |
64+ | 14.37 грн |
175+ | 13.58 грн |
1000+ | 13.07 грн |
1N914TR |
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Виробник: ONSEMI
Category: THT universal diodes
Description: Diode: switching; THT; 100V; 0.3A; reel,tape; DO35; 4ns
Type of diode: switching
Mounting: THT
Max. off-state voltage: 100V
Load current: 0.3A
Reverse recovery time: 4ns
Semiconductor structure: single diode
Case: DO35
Kind of package: reel; tape
Category: THT universal diodes
Description: Diode: switching; THT; 100V; 0.3A; reel,tape; DO35; 4ns
Type of diode: switching
Mounting: THT
Max. off-state voltage: 100V
Load current: 0.3A
Reverse recovery time: 4ns
Semiconductor structure: single diode
Case: DO35
Kind of package: reel; tape
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2N5195G |
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Виробник: ONSEMI
Category: PNP THT transistors
Description: Transistor: PNP; bipolar; 80V; 4A; 40W; TO225
Case: TO225
Frequency: 2MHz
Collector-emitter voltage: 80V
Current gain: 20...80
Collector current: 4A
Type of transistor: PNP
Power dissipation: 40W
Polarisation: bipolar
Kind of package: bulk
Mounting: THT
Category: PNP THT transistors
Description: Transistor: PNP; bipolar; 80V; 4A; 40W; TO225
Case: TO225
Frequency: 2MHz
Collector-emitter voltage: 80V
Current gain: 20...80
Collector current: 4A
Type of transistor: PNP
Power dissipation: 40W
Polarisation: bipolar
Kind of package: bulk
Mounting: THT
на замовлення 358 шт:
термін постачання 21-30 дні (днів)Кількість | Ціна |
---|---|
5+ | 84.11 грн |
10+ | 50.80 грн |
26+ | 36.11 грн |
69+ | 34.18 грн |
ESD9L3.3ST5G |
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Виробник: ONSEMI
Category: Unidirectional TVS SMD diodes
Description: Diode: TVS; 0.15W; 4.8V; SOD923; reel,tape; 0.5÷0.9pF; ESD
Type of diode: TVS
Max. off-state voltage: 3.3V
Breakdown voltage: 4.8V
Case: SOD923
Mounting: SMD
Kind of package: reel; tape
Peak pulse power dissipation: 0.15W
Leakage current: 1µA
Version: ESD
Capacitance: 0.5...0.9pF
Category: Unidirectional TVS SMD diodes
Description: Diode: TVS; 0.15W; 4.8V; SOD923; reel,tape; 0.5÷0.9pF; ESD
Type of diode: TVS
Max. off-state voltage: 3.3V
Breakdown voltage: 4.8V
Case: SOD923
Mounting: SMD
Kind of package: reel; tape
Peak pulse power dissipation: 0.15W
Leakage current: 1µA
Version: ESD
Capacitance: 0.5...0.9pF
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ESD9X3.3ST5G |
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Виробник: ONSEMI
Category: Unidirectional TVS SMD diodes
Description: Diode: TVS; 5V; unidirectional; SOD923F; reel,tape
Type of diode: TVS
Max. off-state voltage: 3.3V
Breakdown voltage: 5V
Semiconductor structure: unidirectional
Case: SOD923F
Mounting: SMD
Kind of package: reel; tape
Category: Unidirectional TVS SMD diodes
Description: Diode: TVS; 5V; unidirectional; SOD923F; reel,tape
Type of diode: TVS
Max. off-state voltage: 3.3V
Breakdown voltage: 5V
Semiconductor structure: unidirectional
Case: SOD923F
Mounting: SMD
Kind of package: reel; tape
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SZESD9B3.3ST5G |
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Виробник: ONSEMI
Category: Bidirectional TVS SMD diodes
Description: Diode: TVS; 5÷7V; bidirectional; SOD923F; reel,tape
Type of diode: TVS
Max. off-state voltage: 3.3V
Breakdown voltage: 5...7V
Semiconductor structure: bidirectional
Case: SOD923F
Mounting: SMD
Kind of package: reel; tape
Application: automotive industry
Category: Bidirectional TVS SMD diodes
Description: Diode: TVS; 5÷7V; bidirectional; SOD923F; reel,tape
Type of diode: TVS
Max. off-state voltage: 3.3V
Breakdown voltage: 5...7V
Semiconductor structure: bidirectional
Case: SOD923F
Mounting: SMD
Kind of package: reel; tape
Application: automotive industry
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SZESD9C3.3ST5G |
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Виробник: ONSEMI
Category: Unidirectional TVS SMD diodes
Description: Diode: TVS; 5V; unidirectional; SOD923F; reel,tape
Type of diode: TVS
Max. off-state voltage: 3.3V
Breakdown voltage: 5V
Semiconductor structure: unidirectional
Case: SOD923F
Mounting: SMD
Kind of package: reel; tape
Application: automotive industry
Category: Unidirectional TVS SMD diodes
Description: Diode: TVS; 5V; unidirectional; SOD923F; reel,tape
Type of diode: TVS
Max. off-state voltage: 3.3V
Breakdown voltage: 5V
Semiconductor structure: unidirectional
Case: SOD923F
Mounting: SMD
Kind of package: reel; tape
Application: automotive industry
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SZESD9X3.3ST5G |
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Виробник: ONSEMI
Category: Unidirectional TVS SMD diodes
Description: Diode: TVS; 5V; unidirectional; SOD923F; reel,tape
Type of diode: TVS
Max. off-state voltage: 3.3V
Breakdown voltage: 5V
Semiconductor structure: unidirectional
Case: SOD923F
Mounting: SMD
Kind of package: reel; tape
Application: automotive industry
Category: Unidirectional TVS SMD diodes
Description: Diode: TVS; 5V; unidirectional; SOD923F; reel,tape
Type of diode: TVS
Max. off-state voltage: 3.3V
Breakdown voltage: 5V
Semiconductor structure: unidirectional
Case: SOD923F
Mounting: SMD
Kind of package: reel; tape
Application: automotive industry
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MUR120G |
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Виробник: ONSEMI
Category: THT universal diodes
Description: Diode: rectifying; THT; 200V; 1A; bulk; DO41
Type of diode: rectifying
Mounting: THT
Max. off-state voltage: 200V
Load current: 1A
Semiconductor structure: single diode
Kind of package: bulk
Case: DO41
Category: THT universal diodes
Description: Diode: rectifying; THT; 200V; 1A; bulk; DO41
Type of diode: rectifying
Mounting: THT
Max. off-state voltage: 200V
Load current: 1A
Semiconductor structure: single diode
Kind of package: bulk
Case: DO41
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NCP1010ST65T3G |
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Виробник: ONSEMI
Category: Voltage regulators - PWM circuits
Description: IC: PMIC; AC/DC switcher,PWM controller; 100mA; 65kHz; Ch: 1; 23Ω
Type of integrated circuit: PMIC
Kind of integrated circuit: AC/DC switcher; PWM controller
Output current: 0.1A
Frequency: 65kHz
Mounting: SMD
Case: SOT223
Topology: flyback
Number of channels: 1
Operating temperature: -40...125°C
On-state resistance: 23Ω
Operating voltage: 8.5...10V DC
Application: SMPS
Kind of package: reel; tape
Duty cycle factor: 0...72%
Category: Voltage regulators - PWM circuits
Description: IC: PMIC; AC/DC switcher,PWM controller; 100mA; 65kHz; Ch: 1; 23Ω
Type of integrated circuit: PMIC
Kind of integrated circuit: AC/DC switcher; PWM controller
Output current: 0.1A
Frequency: 65kHz
Mounting: SMD
Case: SOT223
Topology: flyback
Number of channels: 1
Operating temperature: -40...125°C
On-state resistance: 23Ω
Operating voltage: 8.5...10V DC
Application: SMPS
Kind of package: reel; tape
Duty cycle factor: 0...72%
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NCP1011ST130T3G |
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Виробник: ONSEMI
Category: Voltage regulators - PWM circuits
Description: IC: PMIC; AC/DC switcher,PWM controller; 250mA; 130kHz; Ch: 1; 23Ω
Type of integrated circuit: PMIC
Kind of integrated circuit: AC/DC switcher; PWM controller
Output current: 0.25A
Frequency: 130kHz
Mounting: SMD
Case: SOT223
Topology: flyback
Number of channels: 1
Operating temperature: -40...125°C
On-state resistance: 23Ω
Operating voltage: 8.5...10V DC
Application: SMPS
Kind of package: reel; tape
Duty cycle factor: 0...72%
Category: Voltage regulators - PWM circuits
Description: IC: PMIC; AC/DC switcher,PWM controller; 250mA; 130kHz; Ch: 1; 23Ω
Type of integrated circuit: PMIC
Kind of integrated circuit: AC/DC switcher; PWM controller
Output current: 0.25A
Frequency: 130kHz
Mounting: SMD
Case: SOT223
Topology: flyback
Number of channels: 1
Operating temperature: -40...125°C
On-state resistance: 23Ω
Operating voltage: 8.5...10V DC
Application: SMPS
Kind of package: reel; tape
Duty cycle factor: 0...72%
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NCP1032AMNTXG |
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Виробник: ONSEMI
Category: Voltage regulators - DC/DC circuits
Description: IC: PMIC; AC/DC switcher,PWM controller; WDFN8; flyback
Type of integrated circuit: PMIC
Case: WDFN8
Mounting: SMD
Operating temperature: -40...125°C
Kind of integrated circuit: AC/DC switcher; PWM controller
Topology: flyback
Operating voltage: 7.55...16V DC
Frequency: 275...960kHz
On-state resistance: 4.2Ω
Number of channels: 1
Category: Voltage regulators - DC/DC circuits
Description: IC: PMIC; AC/DC switcher,PWM controller; WDFN8; flyback
Type of integrated circuit: PMIC
Case: WDFN8
Mounting: SMD
Operating temperature: -40...125°C
Kind of integrated circuit: AC/DC switcher; PWM controller
Topology: flyback
Operating voltage: 7.55...16V DC
Frequency: 275...960kHz
On-state resistance: 4.2Ω
Number of channels: 1
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LM285D-1.2G |
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Виробник: ONSEMI
Category: Reference voltage sources - circuits
Description: IC: voltage reference source; 1.235V; ±1%; SO8; tube; 20mA
Type of integrated circuit: voltage reference source
Reference voltage: 1.235V
Tolerance: ±1%
Mounting: SMD
Case: SO8
Operating temperature: -40...85°C
Kind of package: tube
Maximum output current: 20mA
Category: Reference voltage sources - circuits
Description: IC: voltage reference source; 1.235V; ±1%; SO8; tube; 20mA
Type of integrated circuit: voltage reference source
Reference voltage: 1.235V
Tolerance: ±1%
Mounting: SMD
Case: SO8
Operating temperature: -40...85°C
Kind of package: tube
Maximum output current: 20mA
на замовлення 427 шт:
термін постачання 21-30 дні (днів)Кількість | Ціна |
---|---|
5+ | 101.60 грн |
10+ | 54.98 грн |
25+ | 42.61 грн |
31+ | 29.38 грн |
85+ | 27.76 грн |
LM285D-1.2R2G |
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Виробник: ONSEMI
Category: Reference voltage sources - circuits
Description: IC: voltage reference source; 1.235V; ±1%; SO8; reel,tape; 20mA
Type of integrated circuit: voltage reference source
Reference voltage: 1.235V
Tolerance: ±1%
Mounting: SMD
Case: SO8
Operating temperature: -40...85°C
Kind of package: reel; tape
Maximum output current: 20mA
Category: Reference voltage sources - circuits
Description: IC: voltage reference source; 1.235V; ±1%; SO8; reel,tape; 20mA
Type of integrated circuit: voltage reference source
Reference voltage: 1.235V
Tolerance: ±1%
Mounting: SMD
Case: SO8
Operating temperature: -40...85°C
Kind of package: reel; tape
Maximum output current: 20mA
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BZX84C8V2LT1G |
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Виробник: ONSEMI
Category: SMD Zener diodes
Description: Diode: Zener; 0.3W; 8.2V; SMD; reel,tape; SOT23; single diode; 0.7uA
Type of diode: Zener
Power dissipation: 0.3W
Zener voltage: 8.2V
Mounting: SMD
Tolerance: ±5%
Kind of package: reel; tape
Case: SOT23
Semiconductor structure: single diode
Manufacturer series: BZX84C
Leakage current: 0.7µA
Category: SMD Zener diodes
Description: Diode: Zener; 0.3W; 8.2V; SMD; reel,tape; SOT23; single diode; 0.7uA
Type of diode: Zener
Power dissipation: 0.3W
Zener voltage: 8.2V
Mounting: SMD
Tolerance: ±5%
Kind of package: reel; tape
Case: SOT23
Semiconductor structure: single diode
Manufacturer series: BZX84C
Leakage current: 0.7µA
на замовлення 1620 шт:
термін постачання 21-30 дні (днів)Кількість | Ціна |
---|---|
56+ | 7.49 грн |
76+ | 5.10 грн |
93+ | 4.18 грн |
156+ | 2.49 грн |
184+ | 2.11 грн |
762+ | 1.19 грн |
BB-GEVK |
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Виробник: ONSEMI
Category: Development kits - others
Description: Dev.kit: evaluation; prototype board; Comp: FT232BL,NCS36510
Interface: GPIO; I2C; SPI; UART
Kit contents: prototype board
Components: FT232BL; NCS36510
Kind of connector: pin strips; Pmod socket x2; power supply; USB
Type of development kit: evaluation
Category: Development kits - others
Description: Dev.kit: evaluation; prototype board; Comp: FT232BL,NCS36510
Interface: GPIO; I2C; SPI; UART
Kit contents: prototype board
Components: FT232BL; NCS36510
Kind of connector: pin strips; Pmod socket x2; power supply; USB
Type of development kit: evaluation
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од. на суму грн.
BAS20LT1G |
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Виробник: ONSEMI
Category: SMD universal diodes
Description: Diode: switching; SMD; 200V; 0.2A; SOT23; Ufmax: 1.25V; reel,tape
Type of diode: switching
Mounting: SMD
Max. off-state voltage: 200V
Load current: 0.2A
Semiconductor structure: single diode
Case: SOT23
Max. forward voltage: 1.25V
Kind of package: reel; tape
Capacitance: 5pF
Category: SMD universal diodes
Description: Diode: switching; SMD; 200V; 0.2A; SOT23; Ufmax: 1.25V; reel,tape
Type of diode: switching
Mounting: SMD
Max. off-state voltage: 200V
Load current: 0.2A
Semiconductor structure: single diode
Case: SOT23
Max. forward voltage: 1.25V
Kind of package: reel; tape
Capacitance: 5pF
на замовлення 4093 шт:
термін постачання 21-30 дні (днів)Кількість | Ціна |
---|---|
50+ | 8.33 грн |
97+ | 4.02 грн |
123+ | 3.16 грн |
250+ | 2.30 грн |
500+ | 1.14 грн |
827+ | 1.10 грн |
1000+ | 1.05 грн |
2273+ | 1.04 грн |
3000+ | 1.00 грн |
BAS40LT1G |
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Виробник: ONSEMI
Category: SMD Schottky diodes
Description: Diode: Schottky switching; SOT23; SMD; 40V; 0.12A; reel,tape
Type of diode: Schottky switching
Case: SOT23
Mounting: SMD
Max. off-state voltage: 40V
Load current: 0.12A
Semiconductor structure: single diode
Max. forward voltage: 1V
Kind of package: reel; tape
Category: SMD Schottky diodes
Description: Diode: Schottky switching; SOT23; SMD; 40V; 0.12A; reel,tape
Type of diode: Schottky switching
Case: SOT23
Mounting: SMD
Max. off-state voltage: 40V
Load current: 0.12A
Semiconductor structure: single diode
Max. forward voltage: 1V
Kind of package: reel; tape
на замовлення 4570 шт:
термін постачання 21-30 дні (днів)Кількість | Ціна |
---|---|
56+ | 7.50 грн |
81+ | 4.79 грн |
122+ | 3.17 грн |
147+ | 2.64 грн |
585+ | 1.55 грн |
1500+ | 1.46 грн |
3000+ | 1.41 грн |