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MMBT5179 MMBT5179 ONSEMI MMBT5179-D.PDF Category: NPN SMD transistors
Description: Transistor: NPN; bipolar; RF; 12V; 0.05A; 0.225W; SOT23
Type of transistor: NPN
Polarisation: bipolar
Kind of transistor: RF
Collector-emitter voltage: 12V
Collector current: 50mA
Power dissipation: 0.225W
Case: SOT23
Mounting: SMD
Kind of package: reel; tape
Frequency: 2GHz
на замовлення 2948 шт:
термін постачання 14-30 дні (днів)
72+6.32 грн
90+4.70 грн
105+4.03 грн
124+3.39 грн
140+3.00 грн
155+2.72 грн
Мінімальне замовлення: 72 шт
В кошику  од. на суму  грн.
DTA143ZET1G DTA143ZET1G ONSEMI DTA143Z-D.PDF Category: PNP SMD transistors
Description: Transistor: PNP; bipolar; BRT; 50V; 0.1A; 0.2W; SC75,SOT416; R2: 47kΩ
Type of transistor: PNP
Polarisation: bipolar
Kind of transistor: BRT
Collector-emitter voltage: 50V
Collector current: 0.1A
Power dissipation: 0.2W
Case: SC75; SOT416
Mounting: SMD
Kind of package: reel; tape
Base resistor: 4.7kΩ
Base-emitter resistor: 47kΩ
Current gain: 80...140
на замовлення 2910 шт:
термін постачання 14-30 дні (днів)
36+12.64 грн
56+7.55 грн
100+4.22 грн
500+2.88 грн
1000+2.48 грн
Мінімальне замовлення: 36 шт
В кошику  од. на суму  грн.
DTA143ZM3T5G DTA143ZM3T5G ONSEMI DTA143Z-D.PDF Category: PNP SMD transistors
Description: Transistor: PNP; bipolar; BRT; 50V; 100mA; 600mW; SOT723; R1: 4.7kΩ
Type of transistor: PNP
Polarisation: bipolar
Kind of transistor: BRT
Collector-emitter voltage: 50V
Collector current: 0.1A
Power dissipation: 0.6W
Case: SOT723
Mounting: SMD
Kind of package: reel; tape
Base resistor: 4.7kΩ
Base-emitter resistor: 47kΩ
Manufacturer standard package: 8000pcs.
Current gain: 80...140
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DTA143EET1G ONSEMI DTA143E-D.PDF Category: PNP SMD transistors
Description: Transistor: PNP; bipolar; BRT; 50V; 100mA; 300mW; SC75,SOT416
Type of transistor: PNP
Polarisation: bipolar
Kind of transistor: BRT
Collector-emitter voltage: 50V
Collector current: 0.1A
Power dissipation: 0.3W
Case: SC75; SOT416
Mounting: SMD
Kind of package: reel; tape
Base resistor: 4.7kΩ
Base-emitter resistor: 4.7kΩ
Manufacturer standard package: 3000pcs.
Current gain: 15...27
на замовлення 7982 шт:
термін постачання 14-30 дні (днів)
23+19.87 грн
38+11.07 грн
100+6.27 грн
500+3.82 грн
1000+2.34 грн
3000+2.05 грн
6000+1.85 грн
Мінімальне замовлення: 23 шт
В кошику  од. на суму  грн.
DTA143EM3T5G DTA143EM3T5G ONSEMI DTA143E-D.PDF Category: PNP SMD transistors
Description: Transistor: PNP; bipolar; BRT; 50V; 100mA; 600mW; SOT723; R1: 4.7kΩ
Type of transistor: PNP
Polarisation: bipolar
Kind of transistor: BRT
Collector-emitter voltage: 50V
Collector current: 0.1A
Power dissipation: 0.6W
Case: SOT723
Mounting: SMD
Kind of package: reel; tape
Base resistor: 4.7kΩ
Base-emitter resistor: 4.7kΩ
Manufacturer standard package: 8000pcs.
Current gain: 15...27
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DTA143TET1G ONSEMI DTA143T-D.PDF Category: PNP SMD transistors
Description: Transistor: PNP; bipolar; BRT; 50V; 100mA; 300mW; SC75,SOT416; 4.7kΩ
Type of transistor: PNP
Polarisation: bipolar
Kind of transistor: BRT
Collector-emitter voltage: 50V
Collector current: 0.1A
Power dissipation: 0.3W
Case: SC75; SOT416
Mounting: SMD
Kind of package: reel; tape
Base resistor: 4.7kΩ
Manufacturer standard package: 3000pcs.
Current gain: 160...250
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DTA143TM3T5G DTA143TM3T5G ONSEMI DTA143T-D.PDF Category: PNP SMD transistors
Description: Transistor: PNP; bipolar; BRT; 50V; 100mA; SOT723; 4.7kΩ
Type of transistor: PNP
Polarisation: bipolar
Kind of transistor: BRT
Collector-emitter voltage: 50V
Collector current: 0.1A
Case: SOT723
Mounting: SMD
Kind of package: reel; tape
Base resistor: 4.7kΩ
Manufacturer standard package: 8000pcs.
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 Мінімальне замовлення: 8000 шт
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MUR620CTG MUR620CTG ONSEMI mur620ct-d.pdf Category: THT universal diodes
Description: Diode: rectifying; THT; 200V; 6A; Ifsm: 75A; TO220AB; tube; 35ns
Mounting: THT
Reverse recovery time: 35ns
Max. forward impulse current: 75A
Max. off-state voltage: 200V
Load current: 6A
Kind of package: tube
Semiconductor structure: common cathode; double
Case: TO220AB
Type of diode: rectifying
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FCB070N65S3FCB070N65S3
FCB070N65S3FCB070N65S3
 FCB070N65S3 ONSEMI FCB070N65S3-D.PDF Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 650V; 44A; 312W; D2PAK
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 650V
Drain current: 44A
Power dissipation: 312W
Case: D2PAK
Gate-source voltage: ±30V
On-state resistance: 70mΩ
Mounting: SMD
Kind of package: reel; tape
Kind of channel: enhancement
на замовлення 22 шт:
термін постачання 14-30 дні (днів)
1+540.09 грн
5+416.81 грн
10+369.84 грн
В кошику  од. на суму  грн.
NTMFS010N10GTWG ONSEMI ntmfs010n10g-d.pdf Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 100V; 83A; Idm: 1247A; 75W; PQFN8
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 100V
Drain current: 83A
Pulsed drain current: 1247A
Power dissipation: 75W
Case: PQFN8
Gate-source voltage: ±20V
On-state resistance: 10.8mΩ
Mounting: SMD
Gate charge: 58.5nC
Kind of package: reel; tape
Kind of channel: enhancement
товару немає в наявності
 Мінімальне замовлення: 3000 шт
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NTTFS010N10MCLTAG ONSEMI nttfs010n10mcl-d.pdf Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 100V; 50A; Idm: 250A; 52W; WDFN8
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 100V
Drain current: 50A
Pulsed drain current: 250A
Power dissipation: 52W
Case: WDFN8
Gate-source voltage: ±20V
On-state resistance: 10.6mΩ
Mounting: SMD
Gate charge: 22nC
Kind of package: reel; tape
Kind of channel: enhancement
товару немає в наявності
 Мінімальне замовлення: 1500 шт
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NSS60600MZ4T1G NSS60600MZ4T1G ONSEMI nss60600mz4-d.pdf Category: PNP SMD transistors
Description: Transistor: PNP; bipolar; 60V; 6A; 2W; SOT223-4,TO261-4
Mounting: SMD
Collector-emitter voltage: 60V
Power dissipation: 2W
Polarisation: bipolar
Type of transistor: PNP
Current gain: 120...360
Kind of package: reel; tape
Case: SOT223-4; TO261-4
Frequency: 100MHz
Collector current: 6A
на замовлення 819 шт:
термін постачання 14-30 дні (днів)
8+60.51 грн
12+36.15 грн
20+32.29 грн
50+27.68 грн
100+24.74 грн
200+21.97 грн
500+18.87 грн
Мінімальне замовлення: 8 шт
В кошику  од. на суму  грн.
NSS60601MZ4T1G ONSEMI nss60601mz4-d.pdf Category: NPN SMD transistors
Description: Transistor: NPN; bipolar; 60V; 6A; 2W; SOT223-4,TO261-4
Mounting: SMD
Collector-emitter voltage: 60V
Power dissipation: 2W
Polarisation: bipolar
Type of transistor: NPN
Current gain: 120...360
Kind of package: reel; tape
Case: SOT223-4; TO261-4
Frequency: 100MHz
Collector current: 6A
на замовлення 1000 шт:
термін постачання 14-30 дні (днів)
7+67.74 грн
11+40.67 грн
100+26.84 грн
200+23.90 грн
250+23.06 грн
500+20.71 грн
1000+19.62 грн
Мінімальне замовлення: 7 шт
В кошику  од. на суму  грн.
MUR1100ERLG MUR1100ERLG ONSEMI MUR1100ERLG.PDF description Category: THT universal diodes
Description: Diode: rectifying; THT; 1kV; 1A; Ifsm: 35A; CASE59; reel,tape; 75ns
Type of diode: rectifying
Mounting: THT
Max. off-state voltage: 1kV
Load current: 1A
Semiconductor structure: single diode
Features of semiconductor devices: ultrafast switching
Max. forward impulse current: 35A
Case: CASE59
Kind of package: reel; tape
Reverse recovery time: 75ns
на замовлення 52 шт:
термін постачання 14-30 дні (днів)
7+70.45 грн
9+46.96 грн
11+40.59 грн
50+29.35 грн
Мінімальне замовлення: 7 шт
В кошику  од. на суму  грн.
MUR1100EG MUR1100EG ONSEMI mur180e-d.pdf description Category: THT universal diodes
Description: Diode: rectifying; THT; 1kV; 1A; Ifsm: 35A; DO41; bulk; 100ns
Type of diode: rectifying
Mounting: THT
Max. off-state voltage: 1kV
Load current: 1A
Semiconductor structure: single diode
Max. forward impulse current: 35A
Case: DO41
Kind of package: bulk
Reverse recovery time: 100ns
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MUN2211T3G MUN2211T3G ONSEMI MUN2211.PDF Category: NPN SMD transistors
Description: Transistor: NPN; bipolar; BRT; 50V; 0.1A; 0.23W; SC59; R1: 10kΩ
Type of transistor: NPN
Polarisation: bipolar
Kind of transistor: BRT
Collector-emitter voltage: 50V
Collector current: 0.1A
Power dissipation: 0.23W
Case: SC59
Mounting: SMD
Kind of package: reel; tape
Base resistor: 10kΩ
Base-emitter resistor: 10kΩ
Current gain: 35...60
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 Мінімальне замовлення: 10000 шт
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SMUN2211T1G ONSEMI dtc114e-d.pdf Category: NPN SMD transistors
Description: Transistor: NPN; bipolar; BRT; 50V; 0.1A; 0.23W; SC59; R1: 10kΩ
Type of transistor: NPN
Polarisation: bipolar
Kind of transistor: BRT
Collector-emitter voltage: 50V
Collector current: 0.1A
Power dissipation: 0.23W
Case: SC59
Mounting: SMD
Kind of package: reel; tape
Base resistor: 10kΩ
Application: automotive industry
Base-emitter resistor: 10kΩ
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FGH50T65SQD-F155 FGH50T65SQD-F155 ONSEMI FGH50T65SQD.PDF Category: THT IGBT transistors
Description: Transistor: IGBT; 650V; 50A; 134W; TO247-3
Mounting: THT
Power dissipation: 134W
Gate charge: 99nC
Features of semiconductor devices: integrated anti-parallel diode
Pulsed collector current: 200A
Type of transistor: IGBT
Kind of package: tube
Case: TO247-3
Gate-emitter voltage: ±20V
Collector current: 50A
Collector-emitter voltage: 650V
на замовлення 337 шт:
термін постачання 14-30 дні (днів)
2+362.17 грн
3+300.24 грн
10+240.69 грн
30+192.05 грн
Мінімальне замовлення: 2 шт
В кошику  од. на суму  грн.
NTMD6N02R2G NTMD6N02R2G ONSEMI ntmd6n02r2-d.pdf Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 20V; 5.5A; 2W; SO8
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 20V
Drain current: 5.5A
Power dissipation: 2W
Case: SO8
Gate-source voltage: ±12V
On-state resistance: 35mΩ
Mounting: SMD
Kind of package: reel; tape
Kind of channel: enhancement
товару немає в наявності
 Мінімальне замовлення: 2500 шт
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MMBZ20VALT1G MMBZ20VALT1G ONSEMI MMBZ_ser.PDF Category: Protection diodes - arrays
Description: Diode: TVS array; 20V; 1.4A; 40W; double,common anode; ESD; SOT23
Max. forward impulse current: 1.4A
Peak pulse power dissipation: 40W
Version: ESD
Max. off-state voltage: 17V
Kind of package: reel; tape
Semiconductor structure: common anode; double
Leakage current: 50nA
Case: SOT23
Type of diode: TVS array
Number of channels: 2
Tolerance: ±5%
Mounting: SMD
Breakdown voltage: 20V
на замовлення 873 шт:
термін постачання 14-30 дні (днів)
63+7.23 грн
74+5.70 грн
85+4.95 грн
136+3.09 грн
500+2.46 грн
Мінімальне замовлення: 63 шт
В кошику  од. на суму  грн.
MMBZ20VAWT1G ONSEMI mmbz27vaw-d.pdf Category: Protection diodes - arrays
Description: Diode: TVS array; 20V; 1.4A; 40W; double,common anode; SC70; Ch: 2
Max. forward impulse current: 1.4A
Peak pulse power dissipation: 40W
Max. off-state voltage: 17V
Kind of package: reel; tape
Semiconductor structure: common anode; double
Case: SC70
Type of diode: TVS array
Number of channels: 2
Tolerance: ±5%
Mounting: SMD
Breakdown voltage: 20V
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SZMMBZ20VALT1G SZMMBZ20VALT1G ONSEMI mmbz5v6alt1-d.pdf Category: Protection diodes - arrays
Description: Diode: TVS array; 20V; 1.4A; 40W; double,common anode; SOT23; Ch: 2
Max. forward impulse current: 1.4A
Peak pulse power dissipation: 40W
Application: automotive industry
Max. off-state voltage: 17V
Kind of package: reel; tape
Semiconductor structure: common anode; double
Case: SOT23
Type of diode: TVS array
Number of channels: 2
Tolerance: ±5%
Mounting: SMD
Breakdown voltage: 20V
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SZMMBZ20VAWT1G ONSEMI mmbz27vaw-d.pdf Category: Protection diodes - arrays
Description: Diode: TVS array; 20V; 1.4A; 40W; double,common anode; SC70; Ch: 2
Max. forward impulse current: 1.4A
Peak pulse power dissipation: 40W
Application: automotive industry
Max. off-state voltage: 17V
Kind of package: reel; tape
Semiconductor structure: common anode; double
Case: SC70
Type of diode: TVS array
Number of channels: 2
Tolerance: ±5%
Mounting: SMD
Breakdown voltage: 20V
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MOC3051SR2VM ONSEMI moc3052m-d.pdf Category: Optotriacs
Description: Optotriac; 4.17kV; Uout: 600V; triac; SMT6; Ch: 1; MOC305X; reel,tape
Type of optocoupler: optotriac
Insulation voltage: 4.17kV
Kind of output: triac
Case: SMT6
Max. off-state voltage: 3V
Trigger current: 15mA
Mounting: SMD
Number of channels: 1
Manufacturer series: MOC305X
Kind of package: reel; tape
Conform to the norm: VDE
Output voltage: 600V
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MOC3051SM ONSEMI moc3052m-d.pdf moc3052m-d.pdf DD93210-MOC3051_3052-091017.pdf Category: Optotriacs
Description: Optotriac; 4.17kV; Uout: 600V; triac; SMT6; Ch: 1; MOC305X; tube
Type of optocoupler: optotriac
Insulation voltage: 4.17kV
Kind of output: triac
Case: SMT6
Max. off-state voltage: 3V
Trigger current: 15mA
Mounting: SMD
Number of channels: 1
Manufacturer series: MOC305X
Kind of package: tube
Output voltage: 600V
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MOC3051SR2M ONSEMI moc3052m-d.pdf Category: Optotriacs
Description: Optotriac; 4.17kV; Uout: 600V; triac; SMT6; Ch: 1; MOC305X; reel,tape
Type of optocoupler: optotriac
Insulation voltage: 4.17kV
Kind of output: triac
Case: SMT6
Max. off-state voltage: 3V
Trigger current: 15mA
Mounting: SMD
Number of channels: 1
Manufacturer series: MOC305X
Kind of package: reel; tape
Output voltage: 600V
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MOC3051TVM MOC3051TVM ONSEMI moc3052m-d.pdf Category: Optotriacs
Description: Optotriac; 4.17kV; Uout: 600V; triac; DIP6; Ch: 1; MOC305X; tube
Type of optocoupler: optotriac
Insulation voltage: 4.17kV
Kind of output: triac
Case: DIP6
Max. off-state voltage: 3V
Trigger current: 15mA
Mounting: THT
Number of channels: 1
Manufacturer series: MOC305X
Kind of package: tube
Conform to the norm: VDE
Output voltage: 600V
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MOC3051VM MOC3051VM ONSEMI moc3052m-d.pdf Category: Optotriacs
Description: Optotriac; 4.17kV; Uout: 600V; triac; DIP6; Ch: 1; MOC305X; tube
Type of optocoupler: optotriac
Insulation voltage: 4.17kV
Kind of output: triac
Case: DIP6
Max. off-state voltage: 3V
Trigger current: 15mA
Mounting: THT
Number of channels: 1
Manufacturer series: MOC305X
Kind of package: tube
Conform to the norm: VDE
Output voltage: 600V
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FQB33N10TM FQB33N10TM ONSEMI FQB33N10.pdf Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 100V; 23A; 127W; D2PAK
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 100V
Drain current: 23A
Case: D2PAK
Gate-source voltage: ±25V
Mounting: SMD
Kind of package: reel; tape
Kind of channel: enhancement
On-state resistance: 52mΩ
Power dissipation: 127W
Gate charge: 51nC
Technology: QFET®
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FQB33N10LTM FQB33N10LTM ONSEMI fqb33n10l-d.pdf Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 100V; 23A; Idm: 132A; 127W; D2PAK
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 100V
Drain current: 23A
Case: D2PAK
Gate-source voltage: ±20V
Mounting: SMD
Kind of package: reel; tape
Kind of channel: enhancement
On-state resistance: 55mΩ
Pulsed drain current: 132A
Power dissipation: 127W
Gate charge: 40nC
Technology: QFET®
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FAN3852UC16X ONSEMI FAN3852-D.PDF Category: RTV - audio integrated circuits
Description: IC: audio amplifier; PDM; microphone preamplifier; 1.64÷3.63VDC
Supply voltage: 1.64...3.63V DC
Kind of package: reel; tape
Case: WLCSP6
Interface: PDM
Number of channels: 1
Mounting: SMD
Type of integrated circuit: audio amplifier
Operating temperature: -40...85°C
Integrated circuit features: microphone preamplifier
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ISL9V3040D3ST ISL9V3040D3ST ONSEMI ISL9V3040P3-D.PDF Category: SMD IGBT transistors
Description: Transistor: IGBT; 400V; 17A; 150W; DPAK; Features: logic level; ESD
Type of transistor: IGBT
Collector-emitter voltage: 400V
Collector current: 17A
Power dissipation: 150W
Case: DPAK
Gate-emitter voltage: ±10V
Mounting: SMD
Gate charge: 17nC
Kind of package: reel; tape
Features of semiconductor devices: logic level
Application: ignition systems
Version: ESD
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 Мінімальне замовлення: 2500 шт
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ISL9V3040D3ST-F085C ISL9V3040D3ST-F085C ONSEMI isl9v3040-f085c-d.pdf Category: SMD IGBT transistors
Description: Transistor: IGBT; 400V; 17A; 150W; DPAK; Features: logic level; ESD
Type of transistor: IGBT
Collector-emitter voltage: 400V
Collector current: 17A
Power dissipation: 150W
Case: DPAK
Gate-emitter voltage: ±10V
Mounting: SMD
Gate charge: 17nC
Kind of package: reel; tape
Features of semiconductor devices: logic level
Application: ignition systems
Version: ESD
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MC74ACT161DR2G MC74ACT161DR2G ONSEMI MC74AC161-D.pdf Category: Counters/dividers
Description: IC: digital; asynchronous reset,binary counter; Ch: 1; IN: 9; TTL
Type of integrated circuit: digital
Kind of integrated circuit: asynchronous reset; binary counter
Number of channels: 1
Number of inputs: 9
Technology: TTL
Manufacturer series: ACT
Mounting: SMD
Case: SOIC16
Family: ACT
Operating temperature: -40...85°C
Supply voltage: 4.5...5.5V DC
Kind of package: reel; tape
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 Мінімальне замовлення: 2500 шт
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NCP45524IMNTWG-H NCP45524IMNTWG-H ONSEMI ncp45524-d.pdf Category: Power switches - integrated circuits
Description: IC: power switch; high-side; 6A; Ch: 1; N-Channel; SMD; DFN8
Mounting: SMD
Supply voltage: 3...5.5V DC
Active logical level: high
Control voltage: 0.5...13.5V DC
Output current: 6A
Type of integrated circuit: power switch
Kind of output: N-Channel
Kind of package: reel; tape
Case: DFN8
Kind of integrated circuit: high-side
Number of channels: 1
On-state resistance: 31.7mΩ
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NCP45524IMNTWG-L NCP45524IMNTWG-L ONSEMI ncp45524-d.pdf Category: Power switches - integrated circuits
Description: IC: power switch; high-side; 6A; Ch: 1; N-Channel; SMD; DFN8
Mounting: SMD
Supply voltage: 3...5.5V DC
Active logical level: low
Control voltage: 0.5...13.5V DC
Output current: 6A
Type of integrated circuit: power switch
Kind of output: N-Channel
Kind of package: reel; tape
Case: DFN8
Kind of integrated circuit: high-side
Number of channels: 1
On-state resistance: 31.7mΩ
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MC33275ST-3.3T3G MC33275ST-3.3T3G ONSEMI mc33275-d.pdf Category: LDO fixed voltage regulators
Description: IC: voltage regulator; LDO,linear,fixed; 3.3V; 0.8A; SOT223; SMD
Type of integrated circuit: voltage regulator
Kind of voltage regulator: fixed; LDO; linear
Voltage drop: 1.1V
Output voltage: 3.3V
Output current: 0.8A
Case: SOT223
Mounting: SMD
Number of channels: 1
Kind of package: reel; tape
Tolerance: ±1%
Input voltage: 0...20V
Manufacturer series: MC33275
Operating temperature: -40...125°C
на замовлення 1 шт:
термін постачання 14-30 дні (днів)
1+451.58 грн
В кошику  од. на суму  грн.
MC33275ST-5.0T3G MC33275ST-5.0T3G ONSEMI mc33275-d.pdf Category: LDO fixed voltage regulators
Description: IC: voltage regulator; LDO,linear,fixed; 5V; 0.3A; SOT223; SMD
Mounting: SMD
Output current: 0.3A
Type of integrated circuit: voltage regulator
Output voltage: 5V
Kind of package: reel; tape
Case: SOT223
Number of channels: 1
Kind of voltage regulator: fixed; LDO; linear
на замовлення 3568 шт:
термін постачання 14-30 дні (днів)
18+26.19 грн
22+19.54 грн
25+18.11 грн
100+15.77 грн
250+14.34 грн
500+13.84 грн
1000+13.25 грн
Мінімальне замовлення: 18 шт
В кошику  од. на суму  грн.
MC33275DT-3.3RKG MC33275DT-3.3RKG ONSEMI mc33275-d.pdf Category: LDO fixed voltage regulators
Description: IC: voltage regulator; LDO,linear,fixed; 3.3V; 0.3A; DPAK; SMD
Type of integrated circuit: voltage regulator
Kind of voltage regulator: fixed; LDO; linear
Output voltage: 3.3V
Output current: 0.3A
Case: DPAK
Mounting: SMD
Kind of package: reel; tape
Number of channels: 1
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MC33275D-3.0G MC33275D-3.0G ONSEMI mc33275-d.pdf Category: LDO fixed voltage regulators
Description: IC: voltage regulator; LDO,linear,fixed; 3V; 0.3A; SO8; SMD; tube
Type of integrated circuit: voltage regulator
Kind of voltage regulator: fixed; LDO; linear
Output voltage: 3V
Output current: 0.3A
Case: SO8
Mounting: SMD
Kind of package: tube
Number of channels: 1
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MC33275D-3.0R2G MC33275D-3.0R2G ONSEMI mc33275-d.pdf Category: LDO fixed voltage regulators
Description: IC: voltage regulator; LDO,linear,fixed; 3V; 0.3A; SO8; SMD; Ch: 1
Type of integrated circuit: voltage regulator
Kind of voltage regulator: fixed; LDO; linear
Output voltage: 3V
Output current: 0.3A
Case: SO8
Mounting: SMD
Kind of package: reel; tape
Number of channels: 1
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MC33275D-3.3R2G MC33275D-3.3R2G ONSEMI mc33275-d.pdf Category: LDO fixed voltage regulators
Description: IC: voltage regulator; LDO,linear,fixed; 3.3V; 0.3A; SO8; SMD; Ch: 1
Type of integrated circuit: voltage regulator
Kind of voltage regulator: fixed; LDO; linear
Output voltage: 3.3V
Output current: 0.3A
Case: SO8
Mounting: SMD
Kind of package: reel; tape
Number of channels: 1
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MC33275D-5.0R2G MC33275D-5.0R2G ONSEMI mc33275-d.pdf Category: LDO fixed voltage regulators
Description: IC: voltage regulator; LDO,linear,fixed; 5V; 0.3A; SO8; SMD; Ch: 1
Type of integrated circuit: voltage regulator
Kind of voltage regulator: fixed; LDO; linear
Output voltage: 5V
Output current: 0.3A
Case: SO8
Mounting: SMD
Kind of package: reel; tape
Number of channels: 1
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MC33275DT-5.0RKG MC33275DT-5.0RKG ONSEMI mc33275-d.pdf Category: LDO fixed voltage regulators
Description: IC: voltage regulator; LDO,linear,fixed; 5V; 0.3A; DPAK; SMD; Ch: 1
Type of integrated circuit: voltage regulator
Kind of voltage regulator: fixed; LDO; linear
Output voltage: 5V
Output current: 0.3A
Case: DPAK
Mounting: SMD
Kind of package: reel; tape
Number of channels: 1
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MC33275MN-3.0R2G MC33275MN-3.0R2G ONSEMI mc33275-d.pdf Category: LDO fixed voltage regulators
Description: IC: voltage regulator; LDO,linear,fixed; 3V; 0.3A; DFN8; SMD; Ch: 1
Type of integrated circuit: voltage regulator
Kind of voltage regulator: fixed; LDO; linear
Output voltage: 3V
Output current: 0.3A
Case: DFN8
Mounting: SMD
Kind of package: reel; tape
Number of channels: 1
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NTBG160N120SC1 ONSEMI ntbg160n120sc1-d.pdf Category: SMD N channel transistors
Description: Transistor: N-MOSFET; SiC; unipolar; 1.2kV; 13.7A; Idm: 78A; 68W
Mounting: SMD
Case: D2PAK-7
Kind of package: reel; tape
Pulsed drain current: 78A
Power dissipation: 68W
Gate charge: 33.8nC
Polarisation: unipolar
Technology: SiC
Features of semiconductor devices: Kelvin terminal
Drain current: 13.7A
Kind of channel: enhancement
Drain-source voltage: 1.2kV
Type of transistor: N-MOSFET
Gate-source voltage: -5...20V
On-state resistance: 0.365Ω
товару немає в наявності
 Мінімальне замовлення: 800 шт
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NTHL160N120SC1 NTHL160N120SC1 ONSEMI NTHL160N120SC1.PDF Category: THT N channel transistors
Description: Transistor: N-MOSFET; SiC; unipolar; 1.2kV; 12A; Idm: 69A; 59W
Type of transistor: N-MOSFET
Drain-source voltage: 1.2kV
Drain current: 12A
On-state resistance: 0.16Ω
Power dissipation: 59W
Gate charge: 34nC
Polarisation: unipolar
Technology: SiC
Kind of channel: enhancement
Gate-source voltage: -15...25V
Kind of package: tube
Case: TO247-3
Mounting: THT
Pulsed drain current: 69A
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NVBG160N120SC1 ONSEMI nvbg160n120sc1-d.pdf Category: SMD N channel transistors
Description: Transistor: N-MOSFET; SiC; unipolar; 1.2kV; 13.7A; Idm: 78A; 68W
Type of transistor: N-MOSFET
Drain-source voltage: 1.2kV
Drain current: 13.7A
On-state resistance: 0.365Ω
Power dissipation: 68W
Gate charge: 33.8nC
Polarisation: unipolar
Technology: SiC
Features of semiconductor devices: Kelvin terminal
Kind of channel: enhancement
Gate-source voltage: -5...15V
Kind of package: reel; tape
Case: D2PAK-7
Mounting: SMD
Pulsed drain current: 78A
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NVHL160N120SC1 ONSEMI nvhl160n120sc1-d.pdf Category: THT N channel transistors
Description: Transistor: N-MOSFET; SiC; unipolar; 1.2kV; 12A; Idm: 69A; 59W
Type of transistor: N-MOSFET
Drain-source voltage: 1.2kV
Drain current: 12A
On-state resistance: 337mΩ
Power dissipation: 59W
Gate charge: 34nC
Polarisation: unipolar
Technology: SiC
Kind of channel: enhancement
Gate-source voltage: -5...20V
Kind of package: tube
Case: TO247-3
Mounting: THT
Pulsed drain current: 69A
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NTH4L160N120SC1 NTH4L160N120SC1 ONSEMI NTH4L160N120SC1.PDF Category: THT N channel transistors
Description: Transistor: N-MOSFET; SiC; unipolar; 1.2kV; 12.3A; Idm: 69A; 55.5W
Type of transistor: N-MOSFET
Drain-source voltage: 1.2kV
Drain current: 12.3A
On-state resistance: 224mΩ
Power dissipation: 55.5W
Gate charge: 34nC
Polarisation: unipolar
Technology: SiC
Features of semiconductor devices: Kelvin terminal
Kind of channel: enhancement
Gate-source voltage: -15...25V
Kind of package: tube
Case: TO247-4
Mounting: THT
Pulsed drain current: 69A
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NVH4L160N120SC1 ONSEMI nvh4l160n120sc1-d.pdf Category: THT N channel transistors
Description: Transistor: N-MOSFET; SiC; unipolar; 1.2kV; 12.3A; Idm: 69A; 55.5W
Type of transistor: N-MOSFET
Drain-source voltage: 1.2kV
Drain current: 12.3A
On-state resistance: 377mΩ
Power dissipation: 55.5W
Gate charge: 34nC
Polarisation: unipolar
Technology: SiC
Features of semiconductor devices: Kelvin terminal
Kind of channel: enhancement
Gate-source voltage: -5...20V
Kind of package: tube
Case: TO247-4
Mounting: THT
Pulsed drain current: 69A
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TL431BVDR2G TL431BVDR2G ONSEMI tl431-d.pdf Category: Reference voltage sources - circuits
Description: IC: voltage reference source; 2.495V; ±0.4%; SO8; reel,tape; 100mA
Type of integrated circuit: voltage reference source
Reference voltage: 2.495V
Tolerance: ±0.4%
Mounting: SMD
Case: SO8
Operating temperature: -40...125°C
Operating voltage: 2.495...36V
Kind of package: reel; tape
Maximum output current: 0.1A
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FOD8802A FOD8802A ONSEMI FOD8802A.pdf Category: Optocouplers - analog output
Description: Optocoupler; SMD; Ch: 2; OUT: transistor; Uinsul: 2.5kV; Uce: 75V; SO8
Case: SO8
Mounting: SMD
Max. off-state voltage: 6V
Turn-off time: 40µs
Number of channels: 2
Manufacturer series: FOD8802
Collector-emitter voltage: 75V
CTR@If: 35-230%@1mA
Slew rate: 10kV/μs
Kind of output: transistor
Insulation voltage: 2.5kV
Type of optocoupler: optocoupler
Turn-on time: 6µs
товару немає в наявності
 Мінімальне замовлення: 2000 шт
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NTP055N65S3H NTP055N65S3H ONSEMI ntp055n65s3h-d.pdf Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 650V; 47A; Idm: 132A; 305W; TO220-3
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 650V
Drain current: 47A
Pulsed drain current: 132A
Power dissipation: 305W
Case: TO220-3
Gate-source voltage: ±30V
On-state resistance: 55mΩ
Mounting: THT
Gate charge: 96nC
Kind of package: tube
Kind of channel: enhancement
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FAN7388MX FAN7388MX ONSEMI FAN7388-D.pdf Category: Buffers, transceivers, drivers
Description: Transistor: N-MOSFET; unipolar; SO20; 10÷20V
Mounting: SMD
Supply voltage: 10...20V
Output current: 350...650mA
Polarisation: unipolar
Operating temperature: -40...150°C
Kind of channel: enhancement
Type of transistor: N-MOSFET
Kind of package: reel; tape
Case: SO20
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FGD3040G2-F085 FGD3040G2-F085 ONSEMI fgi3040g2_f085-d.pdf Category: SMD IGBT transistors
Description: Transistor: IGBT; 400V; 25.6A; 150W; DPAK; Features: logic level
Application: ignition systems
Mounting: SMD
Collector-emitter voltage: 400V
Power dissipation: 150W
Gate charge: 21nC
Version: ESD
Features of semiconductor devices: logic level
Type of transistor: IGBT
Kind of package: reel; tape
Case: DPAK
Gate-emitter voltage: ±10V
Collector current: 25.6A
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FGD3040G2-F085C FGD3040G2-F085C ONSEMI fgx3040g2-f085c-d.pdf Category: SMD IGBT transistors
Description: Transistor: IGBT; 400V; 25.6A; 150W; DPAK; Features: logic level
Application: ignition systems
Mounting: SMD
Collector-emitter voltage: 400V
Power dissipation: 150W
Gate charge: 21nC
Version: ESD
Features of semiconductor devices: logic level
Type of transistor: IGBT
Kind of package: reel; tape
Case: DPAK
Gate-emitter voltage: ±10V
Collector current: 25.6A
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FGD3040G2-F085V FGD3040G2-F085V ONSEMI fgd3040g2-f085v-d.pdf Category: SMD IGBT transistors
Description: Transistor: IGBT; 400V; 25.6A; 150W; DPAK; Features: logic level
Application: ignition systems
Mounting: SMD
Collector-emitter voltage: 400V
Power dissipation: 150W
Gate charge: 21nC
Version: ESD
Features of semiconductor devices: logic level
Type of transistor: IGBT
Kind of package: reel; tape
Case: DPAK
Gate-emitter voltage: ±10V
Collector current: 25.6A
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1N5375BG 1N5375BG ONSEMI 1N53xx.PDF Category: THT Zener diodes
Description: Diode: Zener; 5W; 82V; CASE017AA; single diode; bulk; 1N53xxB
Type of diode: Zener
Power dissipation: 5W
Zener voltage: 82V
Case: CASE017AA
Mounting: THT
Semiconductor structure: single diode
Kind of package: bulk
Manufacturer series: 1N53xxB
Tolerance: ±5%
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1N5375BRLG 1N5375BRLG ONSEMI 1N53xx.PDF Category: THT Zener diodes
Description: Diode: Zener; 5W; 82V; CASE017AA; single diode; reel,tape; 1N53xxB
Type of diode: Zener
Power dissipation: 5W
Zener voltage: 82V
Case: CASE017AA
Mounting: THT
Semiconductor structure: single diode
Kind of package: reel; tape
Manufacturer series: 1N53xxB
Tolerance: ±5%
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MMBT5179 MMBT5179-D.PDF
MMBT5179
Виробник: ONSEMI
Category: NPN SMD transistors
Description: Transistor: NPN; bipolar; RF; 12V; 0.05A; 0.225W; SOT23
Type of transistor: NPN
Polarisation: bipolar
Kind of transistor: RF
Collector-emitter voltage: 12V
Collector current: 50mA
Power dissipation: 0.225W
Case: SOT23
Mounting: SMD
Kind of package: reel; tape
Frequency: 2GHz
на замовлення 2948 шт:
термін постачання 14-30 дні (днів)
КількістьЦіна без ПДВ
72+6.32 грн
90+4.70 грн
105+4.03 грн
124+3.39 грн
140+3.00 грн
155+2.72 грн
Мінімальне замовлення: 72 шт
В кошику  од. на суму  грн.
DTA143ZET1G DTA143Z-D.PDF
DTA143ZET1G
Виробник: ONSEMI
Category: PNP SMD transistors
Description: Transistor: PNP; bipolar; BRT; 50V; 0.1A; 0.2W; SC75,SOT416; R2: 47kΩ
Type of transistor: PNP
Polarisation: bipolar
Kind of transistor: BRT
Collector-emitter voltage: 50V
Collector current: 0.1A
Power dissipation: 0.2W
Case: SC75; SOT416
Mounting: SMD
Kind of package: reel; tape
Base resistor: 4.7kΩ
Base-emitter resistor: 47kΩ
Current gain: 80...140
на замовлення 2910 шт:
термін постачання 14-30 дні (днів)
КількістьЦіна без ПДВ
36+12.64 грн
56+7.55 грн
100+4.22 грн
500+2.88 грн
1000+2.48 грн
Мінімальне замовлення: 36 шт
В кошику  од. на суму  грн.
DTA143ZM3T5G DTA143Z-D.PDF
DTA143ZM3T5G
Виробник: ONSEMI
Category: PNP SMD transistors
Description: Transistor: PNP; bipolar; BRT; 50V; 100mA; 600mW; SOT723; R1: 4.7kΩ
Type of transistor: PNP
Polarisation: bipolar
Kind of transistor: BRT
Collector-emitter voltage: 50V
Collector current: 0.1A
Power dissipation: 0.6W
Case: SOT723
Mounting: SMD
Kind of package: reel; tape
Base resistor: 4.7kΩ
Base-emitter resistor: 47kΩ
Manufacturer standard package: 8000pcs.
Current gain: 80...140
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DTA143EET1G DTA143E-D.PDF
Виробник: ONSEMI
Category: PNP SMD transistors
Description: Transistor: PNP; bipolar; BRT; 50V; 100mA; 300mW; SC75,SOT416
Type of transistor: PNP
Polarisation: bipolar
Kind of transistor: BRT
Collector-emitter voltage: 50V
Collector current: 0.1A
Power dissipation: 0.3W
Case: SC75; SOT416
Mounting: SMD
Kind of package: reel; tape
Base resistor: 4.7kΩ
Base-emitter resistor: 4.7kΩ
Manufacturer standard package: 3000pcs.
Current gain: 15...27
на замовлення 7982 шт:
термін постачання 14-30 дні (днів)
КількістьЦіна без ПДВ
23+19.87 грн
38+11.07 грн
100+6.27 грн
500+3.82 грн
1000+2.34 грн
3000+2.05 грн
6000+1.85 грн
Мінімальне замовлення: 23 шт
В кошику  од. на суму  грн.
DTA143EM3T5G DTA143E-D.PDF
DTA143EM3T5G
Виробник: ONSEMI
Category: PNP SMD transistors
Description: Transistor: PNP; bipolar; BRT; 50V; 100mA; 600mW; SOT723; R1: 4.7kΩ
Type of transistor: PNP
Polarisation: bipolar
Kind of transistor: BRT
Collector-emitter voltage: 50V
Collector current: 0.1A
Power dissipation: 0.6W
Case: SOT723
Mounting: SMD
Kind of package: reel; tape
Base resistor: 4.7kΩ
Base-emitter resistor: 4.7kΩ
Manufacturer standard package: 8000pcs.
Current gain: 15...27
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DTA143TET1G DTA143T-D.PDF
Виробник: ONSEMI
Category: PNP SMD transistors
Description: Transistor: PNP; bipolar; BRT; 50V; 100mA; 300mW; SC75,SOT416; 4.7kΩ
Type of transistor: PNP
Polarisation: bipolar
Kind of transistor: BRT
Collector-emitter voltage: 50V
Collector current: 0.1A
Power dissipation: 0.3W
Case: SC75; SOT416
Mounting: SMD
Kind of package: reel; tape
Base resistor: 4.7kΩ
Manufacturer standard package: 3000pcs.
Current gain: 160...250
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DTA143TM3T5G DTA143T-D.PDF
DTA143TM3T5G
Виробник: ONSEMI
Category: PNP SMD transistors
Description: Transistor: PNP; bipolar; BRT; 50V; 100mA; SOT723; 4.7kΩ
Type of transistor: PNP
Polarisation: bipolar
Kind of transistor: BRT
Collector-emitter voltage: 50V
Collector current: 0.1A
Case: SOT723
Mounting: SMD
Kind of package: reel; tape
Base resistor: 4.7kΩ
Manufacturer standard package: 8000pcs.
товару немає в наявності
Мінімальне замовлення: 8000 шт
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MUR620CTG mur620ct-d.pdf
MUR620CTG
Виробник: ONSEMI
Category: THT universal diodes
Description: Diode: rectifying; THT; 200V; 6A; Ifsm: 75A; TO220AB; tube; 35ns
Mounting: THT
Reverse recovery time: 35ns
Max. forward impulse current: 75A
Max. off-state voltage: 200V
Load current: 6A
Kind of package: tube
Semiconductor structure: common cathode; double
Case: TO220AB
Type of diode: rectifying
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FCB070N65S3 FCB070N65S3-D.PDF
FCB070N65S3FCB070N65S3
FCB070N65S3FCB070N65S3
Виробник: ONSEMI
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 650V; 44A; 312W; D2PAK
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 650V
Drain current: 44A
Power dissipation: 312W
Case: D2PAK
Gate-source voltage: ±30V
On-state resistance: 70mΩ
Mounting: SMD
Kind of package: reel; tape
Kind of channel: enhancement
на замовлення 22 шт:
термін постачання 14-30 дні (днів)
КількістьЦіна без ПДВ
1+540.09 грн
5+416.81 грн
10+369.84 грн
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NTMFS010N10GTWG ntmfs010n10g-d.pdf
Виробник: ONSEMI
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 100V; 83A; Idm: 1247A; 75W; PQFN8
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 100V
Drain current: 83A
Pulsed drain current: 1247A
Power dissipation: 75W
Case: PQFN8
Gate-source voltage: ±20V
On-state resistance: 10.8mΩ
Mounting: SMD
Gate charge: 58.5nC
Kind of package: reel; tape
Kind of channel: enhancement
товару немає в наявності
Мінімальне замовлення: 3000 шт
В кошику  од. на суму  грн.
NTTFS010N10MCLTAG nttfs010n10mcl-d.pdf
Виробник: ONSEMI
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 100V; 50A; Idm: 250A; 52W; WDFN8
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 100V
Drain current: 50A
Pulsed drain current: 250A
Power dissipation: 52W
Case: WDFN8
Gate-source voltage: ±20V
On-state resistance: 10.6mΩ
Mounting: SMD
Gate charge: 22nC
Kind of package: reel; tape
Kind of channel: enhancement
товару немає в наявності
Мінімальне замовлення: 1500 шт
В кошику  од. на суму  грн.
NSS60600MZ4T1G nss60600mz4-d.pdf
NSS60600MZ4T1G
Виробник: ONSEMI
Category: PNP SMD transistors
Description: Transistor: PNP; bipolar; 60V; 6A; 2W; SOT223-4,TO261-4
Mounting: SMD
Collector-emitter voltage: 60V
Power dissipation: 2W
Polarisation: bipolar
Type of transistor: PNP
Current gain: 120...360
Kind of package: reel; tape
Case: SOT223-4; TO261-4
Frequency: 100MHz
Collector current: 6A
на замовлення 819 шт:
термін постачання 14-30 дні (днів)
КількістьЦіна без ПДВ
8+60.51 грн
12+36.15 грн
20+32.29 грн
50+27.68 грн
100+24.74 грн
200+21.97 грн
500+18.87 грн
Мінімальне замовлення: 8 шт
В кошику  од. на суму  грн.
NSS60601MZ4T1G nss60601mz4-d.pdf
Виробник: ONSEMI
Category: NPN SMD transistors
Description: Transistor: NPN; bipolar; 60V; 6A; 2W; SOT223-4,TO261-4
Mounting: SMD
Collector-emitter voltage: 60V
Power dissipation: 2W
Polarisation: bipolar
Type of transistor: NPN
Current gain: 120...360
Kind of package: reel; tape
Case: SOT223-4; TO261-4
Frequency: 100MHz
Collector current: 6A
на замовлення 1000 шт:
термін постачання 14-30 дні (днів)
КількістьЦіна без ПДВ
7+67.74 грн
11+40.67 грн
100+26.84 грн
200+23.90 грн
250+23.06 грн
500+20.71 грн
1000+19.62 грн
Мінімальне замовлення: 7 шт
В кошику  од. на суму  грн.
MUR1100ERLG description MUR1100ERLG.PDF
MUR1100ERLG
Виробник: ONSEMI
Category: THT universal diodes
Description: Diode: rectifying; THT; 1kV; 1A; Ifsm: 35A; CASE59; reel,tape; 75ns
Type of diode: rectifying
Mounting: THT
Max. off-state voltage: 1kV
Load current: 1A
Semiconductor structure: single diode
Features of semiconductor devices: ultrafast switching
Max. forward impulse current: 35A
Case: CASE59
Kind of package: reel; tape
Reverse recovery time: 75ns
на замовлення 52 шт:
термін постачання 14-30 дні (днів)
КількістьЦіна без ПДВ
7+70.45 грн
9+46.96 грн
11+40.59 грн
50+29.35 грн
Мінімальне замовлення: 7 шт
В кошику  од. на суму  грн.
MUR1100EG description mur180e-d.pdf
MUR1100EG
Виробник: ONSEMI
Category: THT universal diodes
Description: Diode: rectifying; THT; 1kV; 1A; Ifsm: 35A; DO41; bulk; 100ns
Type of diode: rectifying
Mounting: THT
Max. off-state voltage: 1kV
Load current: 1A
Semiconductor structure: single diode
Max. forward impulse current: 35A
Case: DO41
Kind of package: bulk
Reverse recovery time: 100ns
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MUN2211T3G MUN2211.PDF
MUN2211T3G
Виробник: ONSEMI
Category: NPN SMD transistors
Description: Transistor: NPN; bipolar; BRT; 50V; 0.1A; 0.23W; SC59; R1: 10kΩ
Type of transistor: NPN
Polarisation: bipolar
Kind of transistor: BRT
Collector-emitter voltage: 50V
Collector current: 0.1A
Power dissipation: 0.23W
Case: SC59
Mounting: SMD
Kind of package: reel; tape
Base resistor: 10kΩ
Base-emitter resistor: 10kΩ
Current gain: 35...60
товару немає в наявності
Мінімальне замовлення: 10000 шт
В кошику  од. на суму  грн.
SMUN2211T1G dtc114e-d.pdf
Виробник: ONSEMI
Category: NPN SMD transistors
Description: Transistor: NPN; bipolar; BRT; 50V; 0.1A; 0.23W; SC59; R1: 10kΩ
Type of transistor: NPN
Polarisation: bipolar
Kind of transistor: BRT
Collector-emitter voltage: 50V
Collector current: 0.1A
Power dissipation: 0.23W
Case: SC59
Mounting: SMD
Kind of package: reel; tape
Base resistor: 10kΩ
Application: automotive industry
Base-emitter resistor: 10kΩ
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FGH50T65SQD-F155 FGH50T65SQD.PDF
FGH50T65SQD-F155
Виробник: ONSEMI
Category: THT IGBT transistors
Description: Transistor: IGBT; 650V; 50A; 134W; TO247-3
Mounting: THT
Power dissipation: 134W
Gate charge: 99nC
Features of semiconductor devices: integrated anti-parallel diode
Pulsed collector current: 200A
Type of transistor: IGBT
Kind of package: tube
Case: TO247-3
Gate-emitter voltage: ±20V
Collector current: 50A
Collector-emitter voltage: 650V
на замовлення 337 шт:
термін постачання 14-30 дні (днів)
КількістьЦіна без ПДВ
2+362.17 грн
3+300.24 грн
10+240.69 грн
30+192.05 грн
Мінімальне замовлення: 2 шт
В кошику  од. на суму  грн.
NTMD6N02R2G ntmd6n02r2-d.pdf
NTMD6N02R2G
Виробник: ONSEMI
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 20V; 5.5A; 2W; SO8
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 20V
Drain current: 5.5A
Power dissipation: 2W
Case: SO8
Gate-source voltage: ±12V
On-state resistance: 35mΩ
Mounting: SMD
Kind of package: reel; tape
Kind of channel: enhancement
товару немає в наявності
Мінімальне замовлення: 2500 шт
В кошику  од. на суму  грн.
MMBZ20VALT1G MMBZ_ser.PDF
MMBZ20VALT1G
Виробник: ONSEMI
Category: Protection diodes - arrays
Description: Diode: TVS array; 20V; 1.4A; 40W; double,common anode; ESD; SOT23
Max. forward impulse current: 1.4A
Peak pulse power dissipation: 40W
Version: ESD
Max. off-state voltage: 17V
Kind of package: reel; tape
Semiconductor structure: common anode; double
Leakage current: 50nA
Case: SOT23
Type of diode: TVS array
Number of channels: 2
Tolerance: ±5%
Mounting: SMD
Breakdown voltage: 20V
на замовлення 873 шт:
термін постачання 14-30 дні (днів)
КількістьЦіна без ПДВ
63+7.23 грн
74+5.70 грн
85+4.95 грн
136+3.09 грн
500+2.46 грн
Мінімальне замовлення: 63 шт
В кошику  од. на суму  грн.
MMBZ20VAWT1G mmbz27vaw-d.pdf
Виробник: ONSEMI
Category: Protection diodes - arrays
Description: Diode: TVS array; 20V; 1.4A; 40W; double,common anode; SC70; Ch: 2
Max. forward impulse current: 1.4A
Peak pulse power dissipation: 40W
Max. off-state voltage: 17V
Kind of package: reel; tape
Semiconductor structure: common anode; double
Case: SC70
Type of diode: TVS array
Number of channels: 2
Tolerance: ±5%
Mounting: SMD
Breakdown voltage: 20V
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SZMMBZ20VALT1G mmbz5v6alt1-d.pdf
SZMMBZ20VALT1G
Виробник: ONSEMI
Category: Protection diodes - arrays
Description: Diode: TVS array; 20V; 1.4A; 40W; double,common anode; SOT23; Ch: 2
Max. forward impulse current: 1.4A
Peak pulse power dissipation: 40W
Application: automotive industry
Max. off-state voltage: 17V
Kind of package: reel; tape
Semiconductor structure: common anode; double
Case: SOT23
Type of diode: TVS array
Number of channels: 2
Tolerance: ±5%
Mounting: SMD
Breakdown voltage: 20V
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SZMMBZ20VAWT1G mmbz27vaw-d.pdf
Виробник: ONSEMI
Category: Protection diodes - arrays
Description: Diode: TVS array; 20V; 1.4A; 40W; double,common anode; SC70; Ch: 2
Max. forward impulse current: 1.4A
Peak pulse power dissipation: 40W
Application: automotive industry
Max. off-state voltage: 17V
Kind of package: reel; tape
Semiconductor structure: common anode; double
Case: SC70
Type of diode: TVS array
Number of channels: 2
Tolerance: ±5%
Mounting: SMD
Breakdown voltage: 20V
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MOC3051SR2VM moc3052m-d.pdf
Виробник: ONSEMI
Category: Optotriacs
Description: Optotriac; 4.17kV; Uout: 600V; triac; SMT6; Ch: 1; MOC305X; reel,tape
Type of optocoupler: optotriac
Insulation voltage: 4.17kV
Kind of output: triac
Case: SMT6
Max. off-state voltage: 3V
Trigger current: 15mA
Mounting: SMD
Number of channels: 1
Manufacturer series: MOC305X
Kind of package: reel; tape
Conform to the norm: VDE
Output voltage: 600V
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MOC3051SM moc3052m-d.pdf moc3052m-d.pdf DD93210-MOC3051_3052-091017.pdf
Виробник: ONSEMI
Category: Optotriacs
Description: Optotriac; 4.17kV; Uout: 600V; triac; SMT6; Ch: 1; MOC305X; tube
Type of optocoupler: optotriac
Insulation voltage: 4.17kV
Kind of output: triac
Case: SMT6
Max. off-state voltage: 3V
Trigger current: 15mA
Mounting: SMD
Number of channels: 1
Manufacturer series: MOC305X
Kind of package: tube
Output voltage: 600V
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MOC3051SR2M moc3052m-d.pdf
Виробник: ONSEMI
Category: Optotriacs
Description: Optotriac; 4.17kV; Uout: 600V; triac; SMT6; Ch: 1; MOC305X; reel,tape
Type of optocoupler: optotriac
Insulation voltage: 4.17kV
Kind of output: triac
Case: SMT6
Max. off-state voltage: 3V
Trigger current: 15mA
Mounting: SMD
Number of channels: 1
Manufacturer series: MOC305X
Kind of package: reel; tape
Output voltage: 600V
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MOC3051TVM moc3052m-d.pdf
MOC3051TVM
Виробник: ONSEMI
Category: Optotriacs
Description: Optotriac; 4.17kV; Uout: 600V; triac; DIP6; Ch: 1; MOC305X; tube
Type of optocoupler: optotriac
Insulation voltage: 4.17kV
Kind of output: triac
Case: DIP6
Max. off-state voltage: 3V
Trigger current: 15mA
Mounting: THT
Number of channels: 1
Manufacturer series: MOC305X
Kind of package: tube
Conform to the norm: VDE
Output voltage: 600V
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MOC3051VM moc3052m-d.pdf
MOC3051VM
Виробник: ONSEMI
Category: Optotriacs
Description: Optotriac; 4.17kV; Uout: 600V; triac; DIP6; Ch: 1; MOC305X; tube
Type of optocoupler: optotriac
Insulation voltage: 4.17kV
Kind of output: triac
Case: DIP6
Max. off-state voltage: 3V
Trigger current: 15mA
Mounting: THT
Number of channels: 1
Manufacturer series: MOC305X
Kind of package: tube
Conform to the norm: VDE
Output voltage: 600V
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FQB33N10TM FQB33N10.pdf
FQB33N10TM
Виробник: ONSEMI
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 100V; 23A; 127W; D2PAK
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 100V
Drain current: 23A
Case: D2PAK
Gate-source voltage: ±25V
Mounting: SMD
Kind of package: reel; tape
Kind of channel: enhancement
On-state resistance: 52mΩ
Power dissipation: 127W
Gate charge: 51nC
Technology: QFET®
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FQB33N10LTM fqb33n10l-d.pdf
FQB33N10LTM
Виробник: ONSEMI
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 100V; 23A; Idm: 132A; 127W; D2PAK
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 100V
Drain current: 23A
Case: D2PAK
Gate-source voltage: ±20V
Mounting: SMD
Kind of package: reel; tape
Kind of channel: enhancement
On-state resistance: 55mΩ
Pulsed drain current: 132A
Power dissipation: 127W
Gate charge: 40nC
Technology: QFET®
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FAN3852UC16X FAN3852-D.PDF
Виробник: ONSEMI
Category: RTV - audio integrated circuits
Description: IC: audio amplifier; PDM; microphone preamplifier; 1.64÷3.63VDC
Supply voltage: 1.64...3.63V DC
Kind of package: reel; tape
Case: WLCSP6
Interface: PDM
Number of channels: 1
Mounting: SMD
Type of integrated circuit: audio amplifier
Operating temperature: -40...85°C
Integrated circuit features: microphone preamplifier
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ISL9V3040D3ST ISL9V3040P3-D.PDF
ISL9V3040D3ST
Виробник: ONSEMI
Category: SMD IGBT transistors
Description: Transistor: IGBT; 400V; 17A; 150W; DPAK; Features: logic level; ESD
Type of transistor: IGBT
Collector-emitter voltage: 400V
Collector current: 17A
Power dissipation: 150W
Case: DPAK
Gate-emitter voltage: ±10V
Mounting: SMD
Gate charge: 17nC
Kind of package: reel; tape
Features of semiconductor devices: logic level
Application: ignition systems
Version: ESD
товару немає в наявності
Мінімальне замовлення: 2500 шт
В кошику  од. на суму  грн.
ISL9V3040D3ST-F085C isl9v3040-f085c-d.pdf
ISL9V3040D3ST-F085C
Виробник: ONSEMI
Category: SMD IGBT transistors
Description: Transistor: IGBT; 400V; 17A; 150W; DPAK; Features: logic level; ESD
Type of transistor: IGBT
Collector-emitter voltage: 400V
Collector current: 17A
Power dissipation: 150W
Case: DPAK
Gate-emitter voltage: ±10V
Mounting: SMD
Gate charge: 17nC
Kind of package: reel; tape
Features of semiconductor devices: logic level
Application: ignition systems
Version: ESD
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MC74ACT161DR2G MC74AC161-D.pdf
MC74ACT161DR2G
Виробник: ONSEMI
Category: Counters/dividers
Description: IC: digital; asynchronous reset,binary counter; Ch: 1; IN: 9; TTL
Type of integrated circuit: digital
Kind of integrated circuit: asynchronous reset; binary counter
Number of channels: 1
Number of inputs: 9
Technology: TTL
Manufacturer series: ACT
Mounting: SMD
Case: SOIC16
Family: ACT
Operating temperature: -40...85°C
Supply voltage: 4.5...5.5V DC
Kind of package: reel; tape
товару немає в наявності
Мінімальне замовлення: 2500 шт
В кошику  од. на суму  грн.
NCP45524IMNTWG-H ncp45524-d.pdf
NCP45524IMNTWG-H
Виробник: ONSEMI
Category: Power switches - integrated circuits
Description: IC: power switch; high-side; 6A; Ch: 1; N-Channel; SMD; DFN8
Mounting: SMD
Supply voltage: 3...5.5V DC
Active logical level: high
Control voltage: 0.5...13.5V DC
Output current: 6A
Type of integrated circuit: power switch
Kind of output: N-Channel
Kind of package: reel; tape
Case: DFN8
Kind of integrated circuit: high-side
Number of channels: 1
On-state resistance: 31.7mΩ
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NCP45524IMNTWG-L ncp45524-d.pdf
NCP45524IMNTWG-L
Виробник: ONSEMI
Category: Power switches - integrated circuits
Description: IC: power switch; high-side; 6A; Ch: 1; N-Channel; SMD; DFN8
Mounting: SMD
Supply voltage: 3...5.5V DC
Active logical level: low
Control voltage: 0.5...13.5V DC
Output current: 6A
Type of integrated circuit: power switch
Kind of output: N-Channel
Kind of package: reel; tape
Case: DFN8
Kind of integrated circuit: high-side
Number of channels: 1
On-state resistance: 31.7mΩ
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MC33275ST-3.3T3G mc33275-d.pdf
MC33275ST-3.3T3G
Виробник: ONSEMI
Category: LDO fixed voltage regulators
Description: IC: voltage regulator; LDO,linear,fixed; 3.3V; 0.8A; SOT223; SMD
Type of integrated circuit: voltage regulator
Kind of voltage regulator: fixed; LDO; linear
Voltage drop: 1.1V
Output voltage: 3.3V
Output current: 0.8A
Case: SOT223
Mounting: SMD
Number of channels: 1
Kind of package: reel; tape
Tolerance: ±1%
Input voltage: 0...20V
Manufacturer series: MC33275
Operating temperature: -40...125°C
на замовлення 1 шт:
термін постачання 14-30 дні (днів)
КількістьЦіна без ПДВ
1+451.58 грн
В кошику  од. на суму  грн.
MC33275ST-5.0T3G mc33275-d.pdf
MC33275ST-5.0T3G
Виробник: ONSEMI
Category: LDO fixed voltage regulators
Description: IC: voltage regulator; LDO,linear,fixed; 5V; 0.3A; SOT223; SMD
Mounting: SMD
Output current: 0.3A
Type of integrated circuit: voltage regulator
Output voltage: 5V
Kind of package: reel; tape
Case: SOT223
Number of channels: 1
Kind of voltage regulator: fixed; LDO; linear
на замовлення 3568 шт:
термін постачання 14-30 дні (днів)
КількістьЦіна без ПДВ
18+26.19 грн
22+19.54 грн
25+18.11 грн
100+15.77 грн
250+14.34 грн
500+13.84 грн
1000+13.25 грн
Мінімальне замовлення: 18 шт
В кошику  од. на суму  грн.
MC33275DT-3.3RKG mc33275-d.pdf
MC33275DT-3.3RKG
Виробник: ONSEMI
Category: LDO fixed voltage regulators
Description: IC: voltage regulator; LDO,linear,fixed; 3.3V; 0.3A; DPAK; SMD
Type of integrated circuit: voltage regulator
Kind of voltage regulator: fixed; LDO; linear
Output voltage: 3.3V
Output current: 0.3A
Case: DPAK
Mounting: SMD
Kind of package: reel; tape
Number of channels: 1
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MC33275D-3.0G mc33275-d.pdf
MC33275D-3.0G
Виробник: ONSEMI
Category: LDO fixed voltage regulators
Description: IC: voltage regulator; LDO,linear,fixed; 3V; 0.3A; SO8; SMD; tube
Type of integrated circuit: voltage regulator
Kind of voltage regulator: fixed; LDO; linear
Output voltage: 3V
Output current: 0.3A
Case: SO8
Mounting: SMD
Kind of package: tube
Number of channels: 1
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MC33275D-3.0R2G mc33275-d.pdf
MC33275D-3.0R2G
Виробник: ONSEMI
Category: LDO fixed voltage regulators
Description: IC: voltage regulator; LDO,linear,fixed; 3V; 0.3A; SO8; SMD; Ch: 1
Type of integrated circuit: voltage regulator
Kind of voltage regulator: fixed; LDO; linear
Output voltage: 3V
Output current: 0.3A
Case: SO8
Mounting: SMD
Kind of package: reel; tape
Number of channels: 1
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MC33275D-3.3R2G mc33275-d.pdf
MC33275D-3.3R2G
Виробник: ONSEMI
Category: LDO fixed voltage regulators
Description: IC: voltage regulator; LDO,linear,fixed; 3.3V; 0.3A; SO8; SMD; Ch: 1
Type of integrated circuit: voltage regulator
Kind of voltage regulator: fixed; LDO; linear
Output voltage: 3.3V
Output current: 0.3A
Case: SO8
Mounting: SMD
Kind of package: reel; tape
Number of channels: 1
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MC33275D-5.0R2G mc33275-d.pdf
MC33275D-5.0R2G
Виробник: ONSEMI
Category: LDO fixed voltage regulators
Description: IC: voltage regulator; LDO,linear,fixed; 5V; 0.3A; SO8; SMD; Ch: 1
Type of integrated circuit: voltage regulator
Kind of voltage regulator: fixed; LDO; linear
Output voltage: 5V
Output current: 0.3A
Case: SO8
Mounting: SMD
Kind of package: reel; tape
Number of channels: 1
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MC33275DT-5.0RKG mc33275-d.pdf
MC33275DT-5.0RKG
Виробник: ONSEMI
Category: LDO fixed voltage regulators
Description: IC: voltage regulator; LDO,linear,fixed; 5V; 0.3A; DPAK; SMD; Ch: 1
Type of integrated circuit: voltage regulator
Kind of voltage regulator: fixed; LDO; linear
Output voltage: 5V
Output current: 0.3A
Case: DPAK
Mounting: SMD
Kind of package: reel; tape
Number of channels: 1
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MC33275MN-3.0R2G mc33275-d.pdf
MC33275MN-3.0R2G
Виробник: ONSEMI
Category: LDO fixed voltage regulators
Description: IC: voltage regulator; LDO,linear,fixed; 3V; 0.3A; DFN8; SMD; Ch: 1
Type of integrated circuit: voltage regulator
Kind of voltage regulator: fixed; LDO; linear
Output voltage: 3V
Output current: 0.3A
Case: DFN8
Mounting: SMD
Kind of package: reel; tape
Number of channels: 1
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NTBG160N120SC1 ntbg160n120sc1-d.pdf
Виробник: ONSEMI
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; SiC; unipolar; 1.2kV; 13.7A; Idm: 78A; 68W
Mounting: SMD
Case: D2PAK-7
Kind of package: reel; tape
Pulsed drain current: 78A
Power dissipation: 68W
Gate charge: 33.8nC
Polarisation: unipolar
Technology: SiC
Features of semiconductor devices: Kelvin terminal
Drain current: 13.7A
Kind of channel: enhancement
Drain-source voltage: 1.2kV
Type of transistor: N-MOSFET
Gate-source voltage: -5...20V
On-state resistance: 0.365Ω
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Мінімальне замовлення: 800 шт
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NTHL160N120SC1 NTHL160N120SC1.PDF
NTHL160N120SC1
Виробник: ONSEMI
Category: THT N channel transistors
Description: Transistor: N-MOSFET; SiC; unipolar; 1.2kV; 12A; Idm: 69A; 59W
Type of transistor: N-MOSFET
Drain-source voltage: 1.2kV
Drain current: 12A
On-state resistance: 0.16Ω
Power dissipation: 59W
Gate charge: 34nC
Polarisation: unipolar
Technology: SiC
Kind of channel: enhancement
Gate-source voltage: -15...25V
Kind of package: tube
Case: TO247-3
Mounting: THT
Pulsed drain current: 69A
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NVBG160N120SC1 nvbg160n120sc1-d.pdf
Виробник: ONSEMI
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; SiC; unipolar; 1.2kV; 13.7A; Idm: 78A; 68W
Type of transistor: N-MOSFET
Drain-source voltage: 1.2kV
Drain current: 13.7A
On-state resistance: 0.365Ω
Power dissipation: 68W
Gate charge: 33.8nC
Polarisation: unipolar
Technology: SiC
Features of semiconductor devices: Kelvin terminal
Kind of channel: enhancement
Gate-source voltage: -5...15V
Kind of package: reel; tape
Case: D2PAK-7
Mounting: SMD
Pulsed drain current: 78A
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NVHL160N120SC1 nvhl160n120sc1-d.pdf
Виробник: ONSEMI
Category: THT N channel transistors
Description: Transistor: N-MOSFET; SiC; unipolar; 1.2kV; 12A; Idm: 69A; 59W
Type of transistor: N-MOSFET
Drain-source voltage: 1.2kV
Drain current: 12A
On-state resistance: 337mΩ
Power dissipation: 59W
Gate charge: 34nC
Polarisation: unipolar
Technology: SiC
Kind of channel: enhancement
Gate-source voltage: -5...20V
Kind of package: tube
Case: TO247-3
Mounting: THT
Pulsed drain current: 69A
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NTH4L160N120SC1 NTH4L160N120SC1.PDF
NTH4L160N120SC1
Виробник: ONSEMI
Category: THT N channel transistors
Description: Transistor: N-MOSFET; SiC; unipolar; 1.2kV; 12.3A; Idm: 69A; 55.5W
Type of transistor: N-MOSFET
Drain-source voltage: 1.2kV
Drain current: 12.3A
On-state resistance: 224mΩ
Power dissipation: 55.5W
Gate charge: 34nC
Polarisation: unipolar
Technology: SiC
Features of semiconductor devices: Kelvin terminal
Kind of channel: enhancement
Gate-source voltage: -15...25V
Kind of package: tube
Case: TO247-4
Mounting: THT
Pulsed drain current: 69A
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NVH4L160N120SC1 nvh4l160n120sc1-d.pdf
Виробник: ONSEMI
Category: THT N channel transistors
Description: Transistor: N-MOSFET; SiC; unipolar; 1.2kV; 12.3A; Idm: 69A; 55.5W
Type of transistor: N-MOSFET
Drain-source voltage: 1.2kV
Drain current: 12.3A
On-state resistance: 377mΩ
Power dissipation: 55.5W
Gate charge: 34nC
Polarisation: unipolar
Technology: SiC
Features of semiconductor devices: Kelvin terminal
Kind of channel: enhancement
Gate-source voltage: -5...20V
Kind of package: tube
Case: TO247-4
Mounting: THT
Pulsed drain current: 69A
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TL431BVDR2G tl431-d.pdf
TL431BVDR2G
Виробник: ONSEMI
Category: Reference voltage sources - circuits
Description: IC: voltage reference source; 2.495V; ±0.4%; SO8; reel,tape; 100mA
Type of integrated circuit: voltage reference source
Reference voltage: 2.495V
Tolerance: ±0.4%
Mounting: SMD
Case: SO8
Operating temperature: -40...125°C
Operating voltage: 2.495...36V
Kind of package: reel; tape
Maximum output current: 0.1A
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FOD8802A FOD8802A.pdf
FOD8802A
Виробник: ONSEMI
Category: Optocouplers - analog output
Description: Optocoupler; SMD; Ch: 2; OUT: transistor; Uinsul: 2.5kV; Uce: 75V; SO8
Case: SO8
Mounting: SMD
Max. off-state voltage: 6V
Turn-off time: 40µs
Number of channels: 2
Manufacturer series: FOD8802
Collector-emitter voltage: 75V
CTR@If: 35-230%@1mA
Slew rate: 10kV/μs
Kind of output: transistor
Insulation voltage: 2.5kV
Type of optocoupler: optocoupler
Turn-on time: 6µs
товару немає в наявності
Мінімальне замовлення: 2000 шт
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NTP055N65S3H ntp055n65s3h-d.pdf
NTP055N65S3H
Виробник: ONSEMI
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 650V; 47A; Idm: 132A; 305W; TO220-3
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 650V
Drain current: 47A
Pulsed drain current: 132A
Power dissipation: 305W
Case: TO220-3
Gate-source voltage: ±30V
On-state resistance: 55mΩ
Mounting: THT
Gate charge: 96nC
Kind of package: tube
Kind of channel: enhancement
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FAN7388MX FAN7388-D.pdf
FAN7388MX
Виробник: ONSEMI
Category: Buffers, transceivers, drivers
Description: Transistor: N-MOSFET; unipolar; SO20; 10÷20V
Mounting: SMD
Supply voltage: 10...20V
Output current: 350...650mA
Polarisation: unipolar
Operating temperature: -40...150°C
Kind of channel: enhancement
Type of transistor: N-MOSFET
Kind of package: reel; tape
Case: SO20
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FGD3040G2-F085 fgi3040g2_f085-d.pdf
FGD3040G2-F085
Виробник: ONSEMI
Category: SMD IGBT transistors
Description: Transistor: IGBT; 400V; 25.6A; 150W; DPAK; Features: logic level
Application: ignition systems
Mounting: SMD
Collector-emitter voltage: 400V
Power dissipation: 150W
Gate charge: 21nC
Version: ESD
Features of semiconductor devices: logic level
Type of transistor: IGBT
Kind of package: reel; tape
Case: DPAK
Gate-emitter voltage: ±10V
Collector current: 25.6A
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FGD3040G2-F085C fgx3040g2-f085c-d.pdf
FGD3040G2-F085C
Виробник: ONSEMI
Category: SMD IGBT transistors
Description: Transistor: IGBT; 400V; 25.6A; 150W; DPAK; Features: logic level
Application: ignition systems
Mounting: SMD
Collector-emitter voltage: 400V
Power dissipation: 150W
Gate charge: 21nC
Version: ESD
Features of semiconductor devices: logic level
Type of transistor: IGBT
Kind of package: reel; tape
Case: DPAK
Gate-emitter voltage: ±10V
Collector current: 25.6A
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FGD3040G2-F085V fgd3040g2-f085v-d.pdf
FGD3040G2-F085V
Виробник: ONSEMI
Category: SMD IGBT transistors
Description: Transistor: IGBT; 400V; 25.6A; 150W; DPAK; Features: logic level
Application: ignition systems
Mounting: SMD
Collector-emitter voltage: 400V
Power dissipation: 150W
Gate charge: 21nC
Version: ESD
Features of semiconductor devices: logic level
Type of transistor: IGBT
Kind of package: reel; tape
Case: DPAK
Gate-emitter voltage: ±10V
Collector current: 25.6A
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1N5375BG 1N53xx.PDF
1N5375BG
Виробник: ONSEMI
Category: THT Zener diodes
Description: Diode: Zener; 5W; 82V; CASE017AA; single diode; bulk; 1N53xxB
Type of diode: Zener
Power dissipation: 5W
Zener voltage: 82V
Case: CASE017AA
Mounting: THT
Semiconductor structure: single diode
Kind of package: bulk
Manufacturer series: 1N53xxB
Tolerance: ±5%
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1N5375BRLG 1N53xx.PDF
1N5375BRLG
Виробник: ONSEMI
Category: THT Zener diodes
Description: Diode: Zener; 5W; 82V; CASE017AA; single diode; reel,tape; 1N53xxB
Type of diode: Zener
Power dissipation: 5W
Zener voltage: 82V
Case: CASE017AA
Mounting: THT
Semiconductor structure: single diode
Kind of package: reel; tape
Manufacturer series: 1N53xxB
Tolerance: ±5%
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