| Фото | Назва | Виробник | Інформація | Доступність | Ціна без ПДВ | ||||||||||||||||
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MMSZ5226CT1G | ONSEMI |
 Category: SMD Zener diodesDescription: Diode: Zener; 0.5W; 3.3V; SMD; SOD123; single diode; reel,tape Type of diode: Zener Power dissipation: 0.5W Zener voltage: 3.3V Mounting: SMD Tolerance: ±2% Case: SOD123 Semiconductor structure: single diode Kind of package: reel; tape Manufacturer series: MMSZ52xxC |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||||||||||
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MJF15030G | ONSEMI |
Category: NPN THT transistors Description: Transistor: NPN; bipolar; 150V; 8A; 36W; TO220FP Collector-emitter voltage: 150V Power dissipation: 36W Polarisation: bipolar Type of transistor: NPN Current gain: 40 Kind of package: tube Case: TO220FP Frequency: 30MHz Collector current: 8A Mounting: THT |
на замовлення 671 шт: термін постачання 14-30 дні (днів) |
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MMBZ5230BLT1G | ONSEMI |
Category: SMD Zener diodes Description: Diode: Zener; 0.3W; 4.7V; SMD; SOT23; single diode; reel,tape Tolerance: ±5% Mounting: SMD Manufacturer series: MMBZ52xxBLT1G Power dissipation: 0.3W Kind of package: reel; tape Semiconductor structure: single diode Case: SOT23 Zener voltage: 4.7V Type of diode: Zener |
на замовлення 934 шт: термін постачання 14-30 дні (днів) |
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| NC7SZ125L6X | ONSEMI |
Category: Buffers, transceivers, drivers Description: IC: digital Type of integrated circuit: digital |
товару немає в наявності |
Мінімальне замовлення: 5000 шт В кошику од. на суму грн. | |||||||||||||||||
| NC7SZ125L6X-L22175 | ONSEMI |
Category: Buffers, transceivers, drivers Description: IC: digital Type of integrated circuit: digital |
товару немає в наявності |
Мінімальне замовлення: 5000 шт В кошику од. на суму грн. | |||||||||||||||||
| NCP152MX280120TCG | ONSEMI |
Category: LDO fixed voltage regulators Description: IC: voltage regulator; LDO,linear,fixed; 1.2V,2.8V; 150mA; XDFN6 Manufacturer series: NCP152 Mounting: SMD Kind of voltage regulator: fixed; LDO; linear Input voltage: 1.9...5.25V Output current: 0.15A Type of integrated circuit: voltage regulator Operating temperature: -40...85°C Output voltage: 1.2V; 2.8V Case: XDFN6 Number of channels: 2 Tolerance: ±2% |
товару немає в наявності |
В кошику од. на суму грн. | |||||||||||||||||
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FQP14N30 | ONSEMI |
Category: THT N channel transistors Description: Transistor: N-MOSFET; unipolar; 300V; 9.1A; Idm: 57.6A; 147W Type of transistor: N-MOSFET Polarisation: unipolar Drain-source voltage: 300V Drain current: 9.1A Power dissipation: 147W Case: TO220AB Gate-source voltage: ±30V On-state resistance: 0.29Ω Mounting: THT Kind of package: tube Kind of channel: enhancement Pulsed drain current: 57.6A Gate charge: 40nC |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||||||||||
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CNY173M | ONSEMI |
Category: Optocouplers - analog output Description: Optocoupler; THT; Ch: 1; OUT: transistor; Uinsul: 4.17kV; Uce: 70V Type of optocoupler: optocoupler Mounting: THT Number of channels: 1 Kind of output: transistor Insulation voltage: 4.17kV CTR@If: 100-200%@10mA Collector-emitter voltage: 70V Case: DIP6 Turn-on time: 2µs Turn-off time: 3µs Manufacturer series: CNY17 |
на замовлення 840 шт: термін постачання 14-30 дні (днів) |
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CNY17F3VM | ONSEMI |
Category: Optocouplers - analog output Description: Optocoupler; THT; Ch: 1; OUT: transistor; Uinsul: 4.17kV; Uce: 70V Type of optocoupler: optocoupler Mounting: THT Number of channels: 1 Kind of output: transistor Insulation voltage: 4.17kV CTR@If: 160-320%@10mA Collector-emitter voltage: 70V Case: DIP6 Turn-on time: 2µs Turn-off time: 3µs Manufacturer series: CNY17 |
на замовлення 115 шт: термін постачання 14-30 дні (днів) |
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CNY172M | ONSEMI |
Category: Optocouplers - analog output Description: Optocoupler; THT; Ch: 1; OUT: transistor; Uinsul: 4.17kV; Uce: 70V Type of optocoupler: optocoupler Mounting: THT Number of channels: 1 Kind of output: transistor Insulation voltage: 4.17kV CTR@If: 63-125%@10mA Collector-emitter voltage: 70V Case: DIP6 Turn-on time: 2µs Turn-off time: 3µs Manufacturer series: CNY17 |
на замовлення 303 шт: термін постачання 14-30 дні (днів) |
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CNY172VM | ONSEMI |
Category: Optocouplers - analog output Description: Optocoupler; THT; Ch: 1; OUT: transistor; Uinsul: 4.17kV; Uce: 70V Type of optocoupler: optocoupler Mounting: THT Number of channels: 1 Kind of output: transistor Insulation voltage: 4.17kV CTR@If: 63-125%@10mA Collector-emitter voltage: 70V Case: DIP6 Turn-on time: 2µs Turn-off time: 3µs Manufacturer series: CNY17 |
на замовлення 518 шт: термін постачання 14-30 дні (днів) |
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CNY17F1VM | ONSEMI |
Category: Optocouplers - analog output Description: Optocoupler; THT; Ch: 1; OUT: transistor; Uinsul: 4.17kV; Uce: 70V Type of optocoupler: optocoupler Mounting: THT Number of channels: 1 Kind of output: transistor Insulation voltage: 4.17kV CTR@If: 40-80%@10mA Collector-emitter voltage: 70V Case: DIP6 Turn-on time: 2µs Turn-off time: 3µs Manufacturer series: CNY17 |
на замовлення 704 шт: термін постачання 14-30 дні (днів) |
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CNY174M | ONSEMI |
Category: Optocouplers - analog output Description: Optocoupler; THT; Ch: 1; OUT: transistor; Uinsul: 4.17kV; Uce: 70V Type of optocoupler: optocoupler Mounting: THT Number of channels: 1 Kind of output: transistor Insulation voltage: 4.17kV CTR@If: 160-320%@10mA Collector-emitter voltage: 70V Case: DIP6 Turn-on time: 2µs Turn-off time: 3µs Manufacturer series: CNY17 |
на замовлення 37 шт: термін постачання 14-30 дні (днів) |
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CNY17F4TVM | ONSEMI |
Category: Optocouplers - analog output Description: Optocoupler; THT; Ch: 1; OUT: transistor; Uinsul: 4.17kV; Uce: 70V Type of optocoupler: optocoupler Mounting: THT Number of channels: 1 Kind of output: transistor Insulation voltage: 4.17kV CTR@If: 160-320%@10mA Collector-emitter voltage: 70V Case: DIP6 Turn-on time: 2µs Turn-off time: 3µs Manufacturer series: CNY17 |
на замовлення 238 шт: термін постачання 14-30 дні (днів) |
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CNY171M | ONSEMI |
Category: Optocouplers - analog output Description: Optocoupler; THT; Ch: 1; OUT: transistor; Uinsul: 4.17kV; Uce: 70V Type of optocoupler: optocoupler Mounting: THT Number of channels: 1 Kind of output: transistor Insulation voltage: 4.17kV CTR@If: 40-80%@10mA Collector-emitter voltage: 70V Case: DIP6 Turn-on time: 2µs Turn-off time: 3µs Manufacturer series: CNY17 |
на замовлення 104 шт: термін постачання 14-30 дні (днів) |
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CNY174SR2M | ONSEMI |
Category: Optocouplers - analog output Description: Optocoupler; SMD; Ch: 1; OUT: transistor; Uinsul: 4.17kV; Uce: 70V Type of optocoupler: optocoupler Mounting: SMD Number of channels: 1 Kind of output: transistor Insulation voltage: 4.17kV CTR@If: 160-320%@10mA Collector-emitter voltage: 70V Case: Gull wing 6 Turn-on time: 2µs Turn-off time: 3µs Manufacturer series: CNY17 |
на замовлення 1 шт: термін постачання 14-30 дні (днів) |
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CNY17F1SR2M | ONSEMI |
Category: Optocouplers - analog output Description: Optocoupler; SMD; Ch: 1; OUT: transistor; Uinsul: 4.17kV; Uce: 70V Type of optocoupler: optocoupler Mounting: SMD Number of channels: 1 Kind of output: transistor Insulation voltage: 4.17kV CTR@If: 40-80%@10mA Collector-emitter voltage: 70V Case: Gull wing 6 Turn-on time: 2µs Turn-off time: 3µs Manufacturer series: CNY17 |
на замовлення 350 шт: термін постачання 14-30 дні (днів) |
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CNY17F2SM | ONSEMI |
Category: Optocouplers - analog output Description: Optocoupler; SMD; Ch: 1; OUT: transistor; Uinsul: 4.17kV; Uce: 70V Type of optocoupler: optocoupler Mounting: SMD Number of channels: 1 Kind of output: transistor Insulation voltage: 4.17kV CTR@If: 63-125%@10mA Collector-emitter voltage: 70V Case: Gull wing 6 Turn-on time: 2µs Turn-off time: 3µs Manufacturer series: CNY17 |
на замовлення 114 шт: термін постачання 14-30 дні (днів) |
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CNY173SM | ONSEMI |
Category: Optocouplers - analog output Description: Optocoupler; SMD; Ch: 1; OUT: transistor; Uinsul: 4.17kV; Uce: 70V Type of optocoupler: optocoupler Mounting: SMD Number of channels: 1 Kind of output: transistor Insulation voltage: 4.17kV CTR@If: 100-200%@10mA Collector-emitter voltage: 70V Case: Gull wing 6 Turn-on time: 2µs Turn-off time: 3µs Manufacturer series: CNY17 |
на замовлення 867 шт: термін постачання 14-30 дні (днів) |
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CNY174SM | ONSEMI |
Category: Optocouplers - analog output Description: Optocoupler; SMD; Ch: 1; OUT: transistor; Uinsul: 4.17kV; Uce: 70V Type of optocoupler: optocoupler Mounting: SMD Number of channels: 1 Kind of output: transistor Insulation voltage: 4.17kV CTR@If: 160-320%@10mA Collector-emitter voltage: 70V Case: Gull wing 6 Turn-on time: 2µs Turn-off time: 3µs Manufacturer series: CNY17 |
на замовлення 603 шт: термін постачання 14-30 дні (днів) |
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CNY172SVM | ONSEMI |
Category: Optocouplers - analog output Description: Optocoupler; SMD; Ch: 1; OUT: transistor; Uinsul: 4.17kV; Uce: 70V Type of optocoupler: optocoupler Mounting: SMD Number of channels: 1 Kind of output: transistor Insulation voltage: 4.17kV CTR@If: 63-125%@10mA Collector-emitter voltage: 70V Case: Gull wing 6 Turn-on time: 2µs Turn-off time: 3µs Manufacturer series: CNY17 |
на замовлення 382 шт: термін постачання 14-30 дні (днів) |
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CNY171SR2VM | ONSEMI |
Category: Optocouplers - analog output Description: Optocoupler; SMD; Ch: 1; OUT: transistor; Uinsul: 4.17kV; Uce: 70V Type of optocoupler: optocoupler Mounting: SMD Number of channels: 1 Kind of output: transistor Insulation voltage: 4.17kV CTR@If: 40-80%@10mA Collector-emitter voltage: 70V Case: Gull wing 6 Turn-on time: 2µs Turn-off time: 3µs Manufacturer series: CNY17 |
на замовлення 198 шт: термін постачання 14-30 дні (днів) |
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CNY17F4SR2VM | ONSEMI |
Category: Optocouplers - analog output Description: Optocoupler; SMD; Ch: 1; OUT: transistor; Uinsul: 4.17kV; Uce: 70V Type of optocoupler: optocoupler Mounting: SMD Number of channels: 1 Kind of output: transistor Insulation voltage: 4.17kV CTR@If: 160-320%@10mA Collector-emitter voltage: 70V Case: Gull wing 6 Turn-on time: 2µs Turn-off time: 3µs Manufacturer series: CNY17 |
на замовлення 4 шт: термін постачання 14-30 дні (днів) |
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CNY17F2M | ONSEMI |
Category: Optocouplers - analog output Description: Optocoupler; THT; Ch: 1; OUT: transistor; Uinsul: 4.17kV; Uce: 70V Type of optocoupler: optocoupler Mounting: THT Number of channels: 1 Kind of output: transistor Insulation voltage: 4.17kV CTR@If: 63-125%@10mA Collector-emitter voltage: 70V Case: DIP6 Turn-on time: 10µs Turn-off time: 10µs Manufacturer series: CNY17 Max. off-state voltage: 6V |
на замовлення 859 шт: термін постачання 14-30 дні (днів) |
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| FAN3121TMPX | ONSEMI |
Category: MOSFET/IGBT drivers Description: IC: driver; low-side,MOSFET gate driver; MillerDrive™; WDFN8 Type of integrated circuit: driver Kind of integrated circuit: low-side; MOSFET gate driver Technology: MillerDrive™ Case: WDFN8 Output current: -11.4...10.6A Number of channels: 1 Supply voltage: 4.5...18V DC Mounting: SMD Operating temperature: -55...150°C Kind of package: reel; tape Kind of output: inverting Pulse fall time: 19ns Impulse rise time: 23ns |
товару немає в наявності |
В кошику од. на суму грн. | |||||||||||||||||
| FAN3121TMPX | ONSEMI |
Category: MOSFET/IGBT drivers Description: IC: driver; low-side,MOSFET gate driver; MillerDrive™; WDFN8 Type of integrated circuit: driver Kind of integrated circuit: low-side; MOSFET gate driver Technology: MillerDrive™ Case: WDFN8 Output current: -11.4...10.6A Number of channels: 1 Supply voltage: 4.5...18V DC Mounting: SMD Operating temperature: -55...150°C Kind of package: reel; tape Kind of output: non-inverting Pulse fall time: 19ns Impulse rise time: 23ns |
товару немає в наявності |
В кошику од. на суму грн. | |||||||||||||||||
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MC74HC157ADTR2G | ONSEMI |
Category: Decoders, multiplexers, switches Description: IC: digital; multiplexer,data selector; Ch: 4; IN: 2; TTL; SMD; HC; HC Type of integrated circuit: digital Mounting: SMD Case: TSSOP16 Operating temperature: -40...85°C Supply voltage: 2...6V DC Kind of package: reel; tape Kind of integrated circuit: data selector; multiplexer Number of channels: 4 Manufacturer series: HC Technology: TTL Number of inputs: 2 Family: HC |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||||||||||
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MC74HC157ADR2G | ONSEMI |
Category: Decoders, multiplexers, switches Description: IC: digital; multiplexer,data selector; Ch: 4; IN: 2; TTL; SMD; SO16 Type of integrated circuit: digital Mounting: SMD Case: SO16 Operating temperature: -40...85°C Supply voltage: 2...6V DC Kind of package: reel; tape Kind of integrated circuit: data selector; multiplexer Number of channels: 4 Manufacturer series: HC Technology: TTL Number of inputs: 2 Family: HC |
товару немає в наявності |
Мінімальне замовлення: 2500 шт В кошику од. на суму грн. | ||||||||||||||||
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MC74HC157ADTR2G-Q | ONSEMI |
Category: Decoders, multiplexers, switches Description: IC: digital; multiplexer,data selector; Ch: 4; IN: 2; SMD; TSSOP16 Type of integrated circuit: digital Mounting: SMD Case: TSSOP16 Operating temperature: -55...125°C Supply voltage: 2...6V Kind of integrated circuit: data selector; multiplexer Number of channels: 4 Delay time: 160ns Number of inputs: 2 Family: HC Number of outputs: 4 |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||||||||||
| NVMFWS004N10MCT1G | ONSEMI |
Category: SMD N channel transistors Description: Transistor: N-MOSFET; unipolar; 100V; 138A; Idm: 900A; 82W; DFN5 Kind of package: reel; tape Case: DFN5 On-state resistance: 3.9mΩ Mounting: SMD Pulsed drain current: 900A Power dissipation: 82W Gate charge: 48nC Polarisation: unipolar Drain current: 138A Kind of channel: enhancement Drain-source voltage: 100V Type of transistor: N-MOSFET Gate-source voltage: ±20V |
товару немає в наявності |
В кошику од. на суму грн. | |||||||||||||||||
| NVMFWS3D6N10MCLT1G | ONSEMI |
Category: SMD N channel transistors Description: Transistor: N-MOSFET; unipolar; 100V; 132A; Idm: 888A; 69W; DFNW5 Kind of package: reel; tape Case: DFNW5 On-state resistance: 3.6mΩ Mounting: SMD Pulsed drain current: 888A Power dissipation: 69W Gate charge: 60nC Polarisation: unipolar Drain current: 132A Kind of channel: enhancement Drain-source voltage: 100V Type of transistor: N-MOSFET Gate-source voltage: ±20V |
товару немає в наявності |
В кошику од. на суму грн. | |||||||||||||||||
| NVMFWS002N10MCLT1G | ONSEMI |
Category: SMD N channel transistors Description: Transistor: N-MOSFET; unipolar; 100V; 177A; Idm: 900A; 97W; DFN5 Kind of package: reel; tape Case: DFN5 On-state resistance: 2.8mΩ Mounting: SMD Pulsed drain current: 900A Power dissipation: 97W Gate charge: 97nC Polarisation: unipolar Drain current: 177A Kind of channel: enhancement Drain-source voltage: 100V Type of transistor: N-MOSFET Gate-source voltage: ±20V |
товару немає в наявності |
В кошику од. на суму грн. | |||||||||||||||||
| NVMFWS005N10MCLT1G | ONSEMI |
Category: SMD N channel transistors Description: Transistor: N-MOSFET; unipolar; 100V; 108A; Idm: 695A; 65W; DFN5 Kind of package: reel; tape Case: DFN5 On-state resistance: 5.1mΩ Mounting: SMD Pulsed drain current: 695A Power dissipation: 65W Gate charge: 55nC Polarisation: unipolar Drain current: 108A Kind of channel: enhancement Drain-source voltage: 100V Type of transistor: N-MOSFET Gate-source voltage: ±20V |
товару немає в наявності |
В кошику од. на суму грн. | |||||||||||||||||
| NVMFWS021N10MCLT1G | ONSEMI |
Category: SMD N channel transistors Description: Transistor: N-MOSFET; unipolar; 100V; 31A; Idm: 159A; 24W; DFNW5 Kind of package: reel; tape Case: DFNW5 On-state resistance: 23mΩ Mounting: SMD Pulsed drain current: 159A Power dissipation: 24W Gate charge: 13nC Polarisation: unipolar Drain current: 31A Kind of channel: enhancement Drain-source voltage: 100V Type of transistor: N-MOSFET Gate-source voltage: ±20V |
товару немає в наявності |
В кошику од. на суму грн. | |||||||||||||||||
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MMBT918LT1G | ONSEMI |
Category: NPN SMD transistors Description: Transistor: NPN; bipolar; RF; 15V; 50mA; 225/300mW; SOT23 Type of transistor: NPN Polarisation: bipolar Kind of transistor: RF Collector-emitter voltage: 15V Collector current: 50mA Power dissipation: 0.225/0.3W Case: SOT23 Current gain: 20 Mounting: SMD Frequency: 600MHz Kind of package: reel; tape |
на замовлення 2218 шт: термін постачання 14-30 дні (днів) |
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MMBT5179 | ONSEMI |
Category: NPN SMD transistors Description: Transistor: NPN; bipolar; RF; 12V; 0.05A; 0.225W; SOT23 Type of transistor: NPN Polarisation: bipolar Kind of transistor: RF Collector-emitter voltage: 12V Collector current: 50mA Power dissipation: 0.225W Case: SOT23 Mounting: SMD Frequency: 2GHz Kind of package: reel; tape |
на замовлення 2978 шт: термін постачання 14-30 дні (днів) |
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DTA143ZET1G | ONSEMI |
Category: PNP SMD transistors Description: Transistor: PNP; bipolar; BRT; 50V; 0.1A; 0.2W; SC75,SOT416; R2: 47kΩ Type of transistor: PNP Polarisation: bipolar Kind of transistor: BRT Collector-emitter voltage: 50V Collector current: 0.1A Power dissipation: 0.2W Case: SC75; SOT416 Current gain: 80...140 Mounting: SMD Kind of package: reel; tape Base resistor: 4.7kΩ Base-emitter resistor: 47kΩ |
на замовлення 2910 шт: термін постачання 14-30 дні (днів) |
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DTA143ZM3T5G | ONSEMI |
Category: PNP SMD transistors Description: Transistor: PNP; bipolar; BRT; 50V; 100mA; 600mW; SOT723; R1: 4.7kΩ Type of transistor: PNP Polarisation: bipolar Kind of transistor: BRT Collector-emitter voltage: 50V Collector current: 0.1A Power dissipation: 0.6W Case: SOT723 Current gain: 80...140 Mounting: SMD Kind of package: reel; tape Base resistor: 4.7kΩ Base-emitter resistor: 47kΩ Manufacturer standard package: 8000pcs. |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||||||||||
| DTA143EET1G | ONSEMI |
Category: PNP SMD transistors Description: Transistor: PNP; bipolar; BRT; 50V; 100mA; 300mW; SC75,SOT416 Type of transistor: PNP Polarisation: bipolar Kind of transistor: BRT Collector-emitter voltage: 50V Collector current: 0.1A Power dissipation: 0.3W Case: SC75; SOT416 Current gain: 15...27 Mounting: SMD Kind of package: reel; tape Base resistor: 4.7kΩ Base-emitter resistor: 4.7kΩ Manufacturer standard package: 3000pcs. |
товару немає в наявності |
В кошику од. на суму грн. | |||||||||||||||||
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DTA143EM3T5G | ONSEMI |
Category: PNP SMD transistors Description: Transistor: PNP; bipolar; BRT; 50V; 100mA; 600mW; SOT723; R1: 4.7kΩ Type of transistor: PNP Polarisation: bipolar Kind of transistor: BRT Collector-emitter voltage: 50V Collector current: 0.1A Power dissipation: 0.6W Case: SOT723 Current gain: 15...27 Mounting: SMD Kind of package: reel; tape Base resistor: 4.7kΩ Base-emitter resistor: 4.7kΩ Manufacturer standard package: 8000pcs. |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||||||||||
| DTA143TET1G | ONSEMI |
Category: PNP SMD transistors Description: Transistor: PNP; bipolar; BRT; 50V; 100mA; 300mW; SC75,SOT416; 4.7kΩ Type of transistor: PNP Polarisation: bipolar Kind of transistor: BRT Collector-emitter voltage: 50V Collector current: 0.1A Power dissipation: 0.3W Case: SC75; SOT416 Current gain: 160...250 Mounting: SMD Kind of package: reel; tape Base resistor: 4.7kΩ Manufacturer standard package: 3000pcs. |
товару немає в наявності |
В кошику од. на суму грн. | |||||||||||||||||
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DTA143TM3T5G | ONSEMI |
Category: PNP SMD transistors Description: Transistor: PNP; bipolar; BRT; 50V; 100mA; SOT723; 4.7kΩ Type of transistor: PNP Polarisation: bipolar Kind of transistor: BRT Collector-emitter voltage: 50V Collector current: 0.1A Case: SOT723 Mounting: SMD Kind of package: reel; tape Base resistor: 4.7kΩ Manufacturer standard package: 8000pcs. |
товару немає в наявності |
Мінімальне замовлення: 8000 шт В кошику од. на суму грн. | ||||||||||||||||
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MMSZ5242B | ONSEMI |
Category: SMD Zener diodes Description: Diode: Zener; 0.5W; 12V; SMD; SOD123; single diode; reel,tape Type of diode: Zener Power dissipation: 0.5W Zener voltage: 12V Mounting: SMD Tolerance: ±5% Case: SOD123 Semiconductor structure: single diode Kind of package: reel; tape Manufacturer series: MMSZ52xxB |
товару немає в наявності |
Мінімальне замовлення: 10 шт В кошику од. на суму грн. | ||||||||||||||||
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MUR620CTG | ONSEMI |
Category: THT universal diodes Description: Diode: rectifying; THT; 200V; 6A; Ifsm: 75A; TO220AB; tube; 35ns Mounting: THT Reverse recovery time: 35ns Max. forward impulse current: 75A Max. off-state voltage: 200V Load current: 6A Kind of package: tube Semiconductor structure: common cathode; double Case: TO220AB Type of diode: rectifying |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||||||||||
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FCB070N65S3 | ONSEMI |
Category: SMD N channel transistors Description: Transistor: N-MOSFET; unipolar; 650V; 44A; 312W; D2PAK Case: D2PAK Mounting: SMD Kind of package: reel; tape Kind of channel: enhancement Drain-source voltage: 650V Type of transistor: N-MOSFET Gate-source voltage: ±30V On-state resistance: 70mΩ Power dissipation: 312W Polarisation: unipolar Drain current: 44A |
на замовлення 430 шт: термін постачання 14-30 дні (днів) |
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| NTMFS010N10GTWG | ONSEMI |
Category: SMD N channel transistors Description: Transistor: N-MOSFET; unipolar; 100V; 83A; Idm: 1247A; 75W; PQFN8 Type of transistor: N-MOSFET Polarisation: unipolar Drain-source voltage: 100V Drain current: 83A Pulsed drain current: 1247A Power dissipation: 75W Case: PQFN8 Gate-source voltage: ±20V On-state resistance: 10.8mΩ Mounting: SMD Gate charge: 58.5nC Kind of package: reel; tape Kind of channel: enhancement |
товару немає в наявності |
Мінімальне замовлення: 3000 шт В кошику од. на суму грн. | |||||||||||||||||
| NTTFS010N10MCLTAG | ONSEMI |
Category: SMD N channel transistors Description: Transistor: N-MOSFET; unipolar; 100V; 50A; Idm: 250A; 52W; WDFN8 Type of transistor: N-MOSFET Polarisation: unipolar Drain-source voltage: 100V Drain current: 50A Pulsed drain current: 250A Power dissipation: 52W Case: WDFN8 Gate-source voltage: ±20V On-state resistance: 10.6mΩ Mounting: SMD Gate charge: 22nC Kind of package: reel; tape Kind of channel: enhancement |
товару немає в наявності |
Мінімальне замовлення: 1500 шт В кошику од. на суму грн. | |||||||||||||||||
 |
NSS60600MZ4T1G | ONSEMI |
Category: PNP SMD transistors Description: Transistor: PNP; bipolar; 60V; 6A; 2W; SOT223-4,TO261-4 Type of transistor: PNP Polarisation: bipolar Collector-emitter voltage: 60V Collector current: 6A Power dissipation: 2W Case: SOT223-4; TO261-4 Current gain: 120...360 Mounting: SMD Kind of package: reel; tape Frequency: 100MHz |
на замовлення 819 шт: термін постачання 14-30 дні (днів) |
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| NSS60601MZ4T1G | ONSEMI |
Category: NPN SMD transistors Description: Transistor: NPN; bipolar; 60V; 6A; 2W; SOT223-4,TO261-4 Collector current: 6A Mounting: SMD Collector-emitter voltage: 60V Power dissipation: 2W Polarisation: bipolar Type of transistor: NPN Current gain: 120...360 Kind of package: reel; tape Case: SOT223-4; TO261-4 Frequency: 100MHz |
на замовлення 1000 шт: термін постачання 14-30 дні (днів) |
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MUR1100ERLG | ONSEMI |
 Category: THT universal diodesDescription: Diode: rectifying; THT; 1kV; 1A; Ifsm: 35A; CASE59; reel,tape; 75ns Type of diode: rectifying Mounting: THT Max. off-state voltage: 1kV Load current: 1A Semiconductor structure: single diode Features of semiconductor devices: ultrafast switching Max. forward impulse current: 35A Case: CASE59 Kind of package: reel; tape Reverse recovery time: 75ns |
на замовлення 97 шт: термін постачання 14-30 дні (днів) |
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MUR1100EG | ONSEMI |
Category: THT universal diodes Description: Diode: rectifying; THT; 1kV; 1A; Ifsm: 35A; DO41; bulk; 100ns Type of diode: rectifying Mounting: THT Max. off-state voltage: 1kV Load current: 1A Semiconductor structure: single diode Max. forward impulse current: 35A Case: DO41 Kind of package: bulk Reverse recovery time: 100ns |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||||||||||
 |
MUN2211T3G | ONSEMI |
Category: NPN SMD transistors Description: Transistor: NPN; bipolar; BRT; 50V; 0.1A; 0.23W; SC59; R1: 10kΩ Type of transistor: NPN Polarisation: bipolar Kind of transistor: BRT Collector-emitter voltage: 50V Collector current: 0.1A Power dissipation: 0.23W Case: SC59 Mounting: SMD Kind of package: reel; tape Base resistor: 10kΩ Base-emitter resistor: 10kΩ Current gain: 35...60 |
товару немає в наявності |
Мінімальне замовлення: 10000 шт В кошику од. на суму грн. | ||||||||||||||||
| SMUN2211T1G | ONSEMI |
Category: NPN SMD transistors Description: Transistor: NPN; bipolar; BRT; 50V; 0.1A; 0.23W; SC59; R1: 10kΩ Type of transistor: NPN Polarisation: bipolar Kind of transistor: BRT Collector-emitter voltage: 50V Collector current: 0.1A Power dissipation: 0.23W Case: SC59 Mounting: SMD Kind of package: reel; tape Base resistor: 10kΩ Application: automotive industry Base-emitter resistor: 10kΩ |
товару немає в наявності |
В кошику од. на суму грн. | |||||||||||||||||
 |
FGH50T65SQD-F155 | ONSEMI |
Category: THT IGBT transistors Description: Transistor: IGBT; 650V; 50A; 134W; TO247-3 Mounting: THT Case: TO247-3 Features of semiconductor devices: integrated anti-parallel diode Pulsed collector current: 200A Type of transistor: IGBT Kind of package: tube Gate-emitter voltage: ±20V Collector current: 50A Collector-emitter voltage: 650V Power dissipation: 134W Gate charge: 99nC |
на замовлення 340 шт: термін постачання 14-30 дні (днів) |
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NTMD6N02R2G | ONSEMI |
Category: SMD N channel transistors Description: Transistor: N-MOSFET; unipolar; 20V; 5.5A; 2W; SO8 Type of transistor: N-MOSFET Polarisation: unipolar Drain-source voltage: 20V Drain current: 5.5A Power dissipation: 2W Case: SO8 Gate-source voltage: ±12V On-state resistance: 35mΩ Mounting: SMD Kind of package: reel; tape Kind of channel: enhancement |
товару немає в наявності |
Мінімальне замовлення: 2500 шт В кошику од. на суму грн. | ||||||||||||||||
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MMBZ20VALT1G | ONSEMI |
Category: Protection diodes - arrays Description: Diode: TVS array; 20V; 1.4A; 40W; double,common anode; ESD; SOT23 Max. forward impulse current: 1.4A Peak pulse power dissipation: 40W Version: ESD Max. off-state voltage: 17V Kind of package: reel; tape Semiconductor structure: common anode; double Leakage current: 50nA Case: SOT23 Type of diode: TVS array Number of channels: 2 Tolerance: ±5% Mounting: SMD Breakdown voltage: 20V |
на замовлення 873 шт: термін постачання 14-30 дні (днів) |
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| MMBZ20VAWT1G | ONSEMI |
Category: Protection diodes - arrays Description: Diode: TVS array; 20V; 1.4A; 40W; double,common anode; SC70; Ch: 2 Max. forward impulse current: 1.4A Peak pulse power dissipation: 40W Max. off-state voltage: 17V Kind of package: reel; tape Semiconductor structure: common anode; double Case: SC70 Type of diode: TVS array Number of channels: 2 Tolerance: ±5% Mounting: SMD Breakdown voltage: 20V |
товару немає в наявності |
В кошику од. на суму грн. | |||||||||||||||||
 |
SZMMBZ20VALT1G | ONSEMI |
Category: Protection diodes - arrays Description: Diode: TVS array; 20V; 1.4A; 40W; double,common anode; SOT23; Ch: 2 Max. forward impulse current: 1.4A Peak pulse power dissipation: 40W Application: automotive industry Max. off-state voltage: 17V Kind of package: reel; tape Semiconductor structure: common anode; double Case: SOT23 Type of diode: TVS array Number of channels: 2 Tolerance: ±5% Mounting: SMD Breakdown voltage: 20V |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||||||||||
| SZMMBZ20VAWT1G | ONSEMI |
Category: Protection diodes - arrays Description: Diode: TVS array; 20V; 1.4A; 40W; double,common anode; SC70; Ch: 2 Max. forward impulse current: 1.4A Peak pulse power dissipation: 40W Application: automotive industry Max. off-state voltage: 17V Kind of package: reel; tape Semiconductor structure: common anode; double Case: SC70 Type of diode: TVS array Number of channels: 2 Tolerance: ±5% Mounting: SMD Breakdown voltage: 20V |
товару немає в наявності |
В кошику од. на суму грн. | |||||||||||||||||
| MOC3051SR2VM | ONSEMI |
Category: Optotriacs Description: Optotriac; 4.17kV; Uout: 600V; triac; SMT6; Ch: 1; MOC305X; reel,tape Type of optocoupler: optotriac Insulation voltage: 4.17kV Kind of output: triac Case: SMT6 Max. off-state voltage: 3V Trigger current: 15mA Mounting: SMD Number of channels: 1 Manufacturer series: MOC305X Kind of package: reel; tape Conform to the norm: VDE Output voltage: 600V |
товару немає в наявності |
В кошику од. на суму грн. |
| MMSZ5226CT1G |
|
Виробник: ONSEMI
Category: SMD Zener diodes
Description: Diode: Zener; 0.5W; 3.3V; SMD; SOD123; single diode; reel,tape
Type of diode: Zener
Power dissipation: 0.5W
Zener voltage: 3.3V
Mounting: SMD
Tolerance: ±2%
Case: SOD123
Semiconductor structure: single diode
Kind of package: reel; tape
Manufacturer series: MMSZ52xxC
Category: SMD Zener diodes
Description: Diode: Zener; 0.5W; 3.3V; SMD; SOD123; single diode; reel,tape
Type of diode: Zener
Power dissipation: 0.5W
Zener voltage: 3.3V
Mounting: SMD
Tolerance: ±2%
Case: SOD123
Semiconductor structure: single diode
Kind of package: reel; tape
Manufacturer series: MMSZ52xxC
товару немає в наявності
В кошику
од. на суму грн.
| MJF15030G |
|
Виробник: ONSEMI
Category: NPN THT transistors
Description: Transistor: NPN; bipolar; 150V; 8A; 36W; TO220FP
Collector-emitter voltage: 150V
Power dissipation: 36W
Polarisation: bipolar
Type of transistor: NPN
Current gain: 40
Kind of package: tube
Case: TO220FP
Frequency: 30MHz
Collector current: 8A
Mounting: THT
Category: NPN THT transistors
Description: Transistor: NPN; bipolar; 150V; 8A; 36W; TO220FP
Collector-emitter voltage: 150V
Power dissipation: 36W
Polarisation: bipolar
Type of transistor: NPN
Current gain: 40
Kind of package: tube
Case: TO220FP
Frequency: 30MHz
Collector current: 8A
Mounting: THT
на замовлення 671 шт:
термін постачання 14-30 дні (днів)
| Кількість | Ціна без ПДВ |
|---|---|
| 5+ | 111.99 грн |
| 10+ | 93.09 грн |
| 50+ | 65.41 грн |
| 100+ | 62.90 грн |
| MMBZ5230BLT1G |
|
Виробник: ONSEMI
Category: SMD Zener diodes
Description: Diode: Zener; 0.3W; 4.7V; SMD; SOT23; single diode; reel,tape
Tolerance: ±5%
Mounting: SMD
Manufacturer series: MMBZ52xxBLT1G
Power dissipation: 0.3W
Kind of package: reel; tape
Semiconductor structure: single diode
Case: SOT23
Zener voltage: 4.7V
Type of diode: Zener
Category: SMD Zener diodes
Description: Diode: Zener; 0.3W; 4.7V; SMD; SOT23; single diode; reel,tape
Tolerance: ±5%
Mounting: SMD
Manufacturer series: MMBZ52xxBLT1G
Power dissipation: 0.3W
Kind of package: reel; tape
Semiconductor structure: single diode
Case: SOT23
Zener voltage: 4.7V
Type of diode: Zener
на замовлення 934 шт:
термін постачання 14-30 дні (днів)
| Кількість | Ціна без ПДВ |
|---|---|
| 63+ | 7.23 грн |
| 84+ | 5.03 грн |
| 103+ | 4.11 грн |
| 167+ | 2.52 грн |
| 204+ | 2.06 грн |
| 500+ | 1.45 грн |
| NC7SZ125L6X |
|
Виробник: ONSEMI
Category: Buffers, transceivers, drivers
Description: IC: digital
Type of integrated circuit: digital
Category: Buffers, transceivers, drivers
Description: IC: digital
Type of integrated circuit: digital
товару немає в наявності
Мінімальне замовлення: 5000 шт
В кошику
од. на суму грн.
| NC7SZ125L6X-L22175 |
|
Виробник: ONSEMI
Category: Buffers, transceivers, drivers
Description: IC: digital
Type of integrated circuit: digital
Category: Buffers, transceivers, drivers
Description: IC: digital
Type of integrated circuit: digital
товару немає в наявності
Мінімальне замовлення: 5000 шт
В кошику
од. на суму грн.
| NCP152MX280120TCG |
|
Виробник: ONSEMI
Category: LDO fixed voltage regulators
Description: IC: voltage regulator; LDO,linear,fixed; 1.2V,2.8V; 150mA; XDFN6
Manufacturer series: NCP152
Mounting: SMD
Kind of voltage regulator: fixed; LDO; linear
Input voltage: 1.9...5.25V
Output current: 0.15A
Type of integrated circuit: voltage regulator
Operating temperature: -40...85°C
Output voltage: 1.2V; 2.8V
Case: XDFN6
Number of channels: 2
Tolerance: ±2%
Category: LDO fixed voltage regulators
Description: IC: voltage regulator; LDO,linear,fixed; 1.2V,2.8V; 150mA; XDFN6
Manufacturer series: NCP152
Mounting: SMD
Kind of voltage regulator: fixed; LDO; linear
Input voltage: 1.9...5.25V
Output current: 0.15A
Type of integrated circuit: voltage regulator
Operating temperature: -40...85°C
Output voltage: 1.2V; 2.8V
Case: XDFN6
Number of channels: 2
Tolerance: ±2%
товару немає в наявності
В кошику
од. на суму грн.
| FQP14N30 |
|
Виробник: ONSEMI
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 300V; 9.1A; Idm: 57.6A; 147W
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 300V
Drain current: 9.1A
Power dissipation: 147W
Case: TO220AB
Gate-source voltage: ±30V
On-state resistance: 0.29Ω
Mounting: THT
Kind of package: tube
Kind of channel: enhancement
Pulsed drain current: 57.6A
Gate charge: 40nC
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 300V; 9.1A; Idm: 57.6A; 147W
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 300V
Drain current: 9.1A
Power dissipation: 147W
Case: TO220AB
Gate-source voltage: ±30V
On-state resistance: 0.29Ω
Mounting: THT
Kind of package: tube
Kind of channel: enhancement
Pulsed drain current: 57.6A
Gate charge: 40nC
товару немає в наявності
В кошику
од. на суму грн.
| CNY173M |
|
Виробник: ONSEMI
Category: Optocouplers - analog output
Description: Optocoupler; THT; Ch: 1; OUT: transistor; Uinsul: 4.17kV; Uce: 70V
Type of optocoupler: optocoupler
Mounting: THT
Number of channels: 1
Kind of output: transistor
Insulation voltage: 4.17kV
CTR@If: 100-200%@10mA
Collector-emitter voltage: 70V
Case: DIP6
Turn-on time: 2µs
Turn-off time: 3µs
Manufacturer series: CNY17
Category: Optocouplers - analog output
Description: Optocoupler; THT; Ch: 1; OUT: transistor; Uinsul: 4.17kV; Uce: 70V
Type of optocoupler: optocoupler
Mounting: THT
Number of channels: 1
Kind of output: transistor
Insulation voltage: 4.17kV
CTR@If: 100-200%@10mA
Collector-emitter voltage: 70V
Case: DIP6
Turn-on time: 2µs
Turn-off time: 3µs
Manufacturer series: CNY17
на замовлення 840 шт:
термін постачання 14-30 дні (днів)
| Кількість | Ціна без ПДВ |
|---|---|
| 16+ | 29.80 грн |
| 23+ | 18.87 грн |
| 25+ | 17.70 грн |
| 50+ | 16.94 грн |
| 100+ | 16.77 грн |
| CNY17F3VM |
|
Виробник: ONSEMI
Category: Optocouplers - analog output
Description: Optocoupler; THT; Ch: 1; OUT: transistor; Uinsul: 4.17kV; Uce: 70V
Type of optocoupler: optocoupler
Mounting: THT
Number of channels: 1
Kind of output: transistor
Insulation voltage: 4.17kV
CTR@If: 160-320%@10mA
Collector-emitter voltage: 70V
Case: DIP6
Turn-on time: 2µs
Turn-off time: 3µs
Manufacturer series: CNY17
Category: Optocouplers - analog output
Description: Optocoupler; THT; Ch: 1; OUT: transistor; Uinsul: 4.17kV; Uce: 70V
Type of optocoupler: optocoupler
Mounting: THT
Number of channels: 1
Kind of output: transistor
Insulation voltage: 4.17kV
CTR@If: 160-320%@10mA
Collector-emitter voltage: 70V
Case: DIP6
Turn-on time: 2µs
Turn-off time: 3µs
Manufacturer series: CNY17
на замовлення 115 шт:
термін постачання 14-30 дні (днів)
| Кількість | Ціна без ПДВ |
|---|---|
| 20+ | 23.48 грн |
| 31+ | 13.92 грн |
| 50+ | 10.99 грн |
| 100+ | 10.57 грн |
| CNY172M |
|
Виробник: ONSEMI
Category: Optocouplers - analog output
Description: Optocoupler; THT; Ch: 1; OUT: transistor; Uinsul: 4.17kV; Uce: 70V
Type of optocoupler: optocoupler
Mounting: THT
Number of channels: 1
Kind of output: transistor
Insulation voltage: 4.17kV
CTR@If: 63-125%@10mA
Collector-emitter voltage: 70V
Case: DIP6
Turn-on time: 2µs
Turn-off time: 3µs
Manufacturer series: CNY17
Category: Optocouplers - analog output
Description: Optocoupler; THT; Ch: 1; OUT: transistor; Uinsul: 4.17kV; Uce: 70V
Type of optocoupler: optocoupler
Mounting: THT
Number of channels: 1
Kind of output: transistor
Insulation voltage: 4.17kV
CTR@If: 63-125%@10mA
Collector-emitter voltage: 70V
Case: DIP6
Turn-on time: 2µs
Turn-off time: 3µs
Manufacturer series: CNY17
на замовлення 303 шт:
термін постачання 14-30 дні (днів)
| Кількість | Ціна без ПДВ |
|---|---|
| 12+ | 37.93 грн |
| 20+ | 21.64 грн |
| 25+ | 17.61 грн |
| 100+ | 11.07 грн |
| CNY172VM |
|
Виробник: ONSEMI
Category: Optocouplers - analog output
Description: Optocoupler; THT; Ch: 1; OUT: transistor; Uinsul: 4.17kV; Uce: 70V
Type of optocoupler: optocoupler
Mounting: THT
Number of channels: 1
Kind of output: transistor
Insulation voltage: 4.17kV
CTR@If: 63-125%@10mA
Collector-emitter voltage: 70V
Case: DIP6
Turn-on time: 2µs
Turn-off time: 3µs
Manufacturer series: CNY17
Category: Optocouplers - analog output
Description: Optocoupler; THT; Ch: 1; OUT: transistor; Uinsul: 4.17kV; Uce: 70V
Type of optocoupler: optocoupler
Mounting: THT
Number of channels: 1
Kind of output: transistor
Insulation voltage: 4.17kV
CTR@If: 63-125%@10mA
Collector-emitter voltage: 70V
Case: DIP6
Turn-on time: 2µs
Turn-off time: 3µs
Manufacturer series: CNY17
на замовлення 518 шт:
термін постачання 14-30 дні (днів)
| Кількість | Ціна без ПДВ |
|---|---|
| 10+ | 45.16 грн |
| 14+ | 30.78 грн |
| 50+ | 24.49 грн |
| CNY17F1VM |
|
Виробник: ONSEMI
Category: Optocouplers - analog output
Description: Optocoupler; THT; Ch: 1; OUT: transistor; Uinsul: 4.17kV; Uce: 70V
Type of optocoupler: optocoupler
Mounting: THT
Number of channels: 1
Kind of output: transistor
Insulation voltage: 4.17kV
CTR@If: 40-80%@10mA
Collector-emitter voltage: 70V
Case: DIP6
Turn-on time: 2µs
Turn-off time: 3µs
Manufacturer series: CNY17
Category: Optocouplers - analog output
Description: Optocoupler; THT; Ch: 1; OUT: transistor; Uinsul: 4.17kV; Uce: 70V
Type of optocoupler: optocoupler
Mounting: THT
Number of channels: 1
Kind of output: transistor
Insulation voltage: 4.17kV
CTR@If: 40-80%@10mA
Collector-emitter voltage: 70V
Case: DIP6
Turn-on time: 2µs
Turn-off time: 3µs
Manufacturer series: CNY17
на замовлення 704 шт:
термін постачання 14-30 дні (днів)
| Кількість | Ціна без ПДВ |
|---|---|
| 12+ | 37.93 грн |
| 30+ | 14.09 грн |
| 36+ | 11.66 грн |
| 100+ | 10.23 грн |
| 500+ | 9.48 грн |
| CNY174M |
|
Виробник: ONSEMI
Category: Optocouplers - analog output
Description: Optocoupler; THT; Ch: 1; OUT: transistor; Uinsul: 4.17kV; Uce: 70V
Type of optocoupler: optocoupler
Mounting: THT
Number of channels: 1
Kind of output: transistor
Insulation voltage: 4.17kV
CTR@If: 160-320%@10mA
Collector-emitter voltage: 70V
Case: DIP6
Turn-on time: 2µs
Turn-off time: 3µs
Manufacturer series: CNY17
Category: Optocouplers - analog output
Description: Optocoupler; THT; Ch: 1; OUT: transistor; Uinsul: 4.17kV; Uce: 70V
Type of optocoupler: optocoupler
Mounting: THT
Number of channels: 1
Kind of output: transistor
Insulation voltage: 4.17kV
CTR@If: 160-320%@10mA
Collector-emitter voltage: 70V
Case: DIP6
Turn-on time: 2µs
Turn-off time: 3µs
Manufacturer series: CNY17
на замовлення 37 шт:
термін постачання 14-30 дні (днів)
| Кількість | Ціна без ПДВ |
|---|---|
| 10+ | 49.67 грн |
| 15+ | 29.35 грн |
| 25+ | 22.64 грн |
| CNY17F4TVM |
|
Виробник: ONSEMI
Category: Optocouplers - analog output
Description: Optocoupler; THT; Ch: 1; OUT: transistor; Uinsul: 4.17kV; Uce: 70V
Type of optocoupler: optocoupler
Mounting: THT
Number of channels: 1
Kind of output: transistor
Insulation voltage: 4.17kV
CTR@If: 160-320%@10mA
Collector-emitter voltage: 70V
Case: DIP6
Turn-on time: 2µs
Turn-off time: 3µs
Manufacturer series: CNY17
Category: Optocouplers - analog output
Description: Optocoupler; THT; Ch: 1; OUT: transistor; Uinsul: 4.17kV; Uce: 70V
Type of optocoupler: optocoupler
Mounting: THT
Number of channels: 1
Kind of output: transistor
Insulation voltage: 4.17kV
CTR@If: 160-320%@10mA
Collector-emitter voltage: 70V
Case: DIP6
Turn-on time: 2µs
Turn-off time: 3µs
Manufacturer series: CNY17
на замовлення 238 шт:
термін постачання 14-30 дні (днів)
| Кількість | Ціна без ПДВ |
|---|---|
| 12+ | 37.93 грн |
| 26+ | 16.61 грн |
| 31+ | 13.67 грн |
| 100+ | 11.99 грн |
| CNY171M |
|
Виробник: ONSEMI
Category: Optocouplers - analog output
Description: Optocoupler; THT; Ch: 1; OUT: transistor; Uinsul: 4.17kV; Uce: 70V
Type of optocoupler: optocoupler
Mounting: THT
Number of channels: 1
Kind of output: transistor
Insulation voltage: 4.17kV
CTR@If: 40-80%@10mA
Collector-emitter voltage: 70V
Case: DIP6
Turn-on time: 2µs
Turn-off time: 3µs
Manufacturer series: CNY17
Category: Optocouplers - analog output
Description: Optocoupler; THT; Ch: 1; OUT: transistor; Uinsul: 4.17kV; Uce: 70V
Type of optocoupler: optocoupler
Mounting: THT
Number of channels: 1
Kind of output: transistor
Insulation voltage: 4.17kV
CTR@If: 40-80%@10mA
Collector-emitter voltage: 70V
Case: DIP6
Turn-on time: 2µs
Turn-off time: 3µs
Manufacturer series: CNY17
на замовлення 104 шт:
термін постачання 14-30 дні (днів)
| Кількість | Ціна без ПДВ |
|---|---|
| 9+ | 50.58 грн |
| 18+ | 24.49 грн |
| 26+ | 16.27 грн |
| 100+ | 13.42 грн |
| CNY174SR2M |
|
Виробник: ONSEMI
Category: Optocouplers - analog output
Description: Optocoupler; SMD; Ch: 1; OUT: transistor; Uinsul: 4.17kV; Uce: 70V
Type of optocoupler: optocoupler
Mounting: SMD
Number of channels: 1
Kind of output: transistor
Insulation voltage: 4.17kV
CTR@If: 160-320%@10mA
Collector-emitter voltage: 70V
Case: Gull wing 6
Turn-on time: 2µs
Turn-off time: 3µs
Manufacturer series: CNY17
Category: Optocouplers - analog output
Description: Optocoupler; SMD; Ch: 1; OUT: transistor; Uinsul: 4.17kV; Uce: 70V
Type of optocoupler: optocoupler
Mounting: SMD
Number of channels: 1
Kind of output: transistor
Insulation voltage: 4.17kV
CTR@If: 160-320%@10mA
Collector-emitter voltage: 70V
Case: Gull wing 6
Turn-on time: 2µs
Turn-off time: 3µs
Manufacturer series: CNY17
на замовлення 1 шт:
термін постачання 14-30 дні (днів)
| Кількість | Ціна без ПДВ |
|---|---|
| 1+ | 451.58 грн |
| CNY17F1SR2M |
|
Виробник: ONSEMI
Category: Optocouplers - analog output
Description: Optocoupler; SMD; Ch: 1; OUT: transistor; Uinsul: 4.17kV; Uce: 70V
Type of optocoupler: optocoupler
Mounting: SMD
Number of channels: 1
Kind of output: transistor
Insulation voltage: 4.17kV
CTR@If: 40-80%@10mA
Collector-emitter voltage: 70V
Case: Gull wing 6
Turn-on time: 2µs
Turn-off time: 3µs
Manufacturer series: CNY17
Category: Optocouplers - analog output
Description: Optocoupler; SMD; Ch: 1; OUT: transistor; Uinsul: 4.17kV; Uce: 70V
Type of optocoupler: optocoupler
Mounting: SMD
Number of channels: 1
Kind of output: transistor
Insulation voltage: 4.17kV
CTR@If: 40-80%@10mA
Collector-emitter voltage: 70V
Case: Gull wing 6
Turn-on time: 2µs
Turn-off time: 3µs
Manufacturer series: CNY17
на замовлення 350 шт:
термін постачання 14-30 дні (днів)
| Кількість | Ціна без ПДВ |
|---|---|
| 12+ | 37.93 грн |
| 25+ | 17.28 грн |
| 30+ | 14.42 грн |
| 100+ | 11.91 грн |
| CNY17F2SM |
|
Виробник: ONSEMI
Category: Optocouplers - analog output
Description: Optocoupler; SMD; Ch: 1; OUT: transistor; Uinsul: 4.17kV; Uce: 70V
Type of optocoupler: optocoupler
Mounting: SMD
Number of channels: 1
Kind of output: transistor
Insulation voltage: 4.17kV
CTR@If: 63-125%@10mA
Collector-emitter voltage: 70V
Case: Gull wing 6
Turn-on time: 2µs
Turn-off time: 3µs
Manufacturer series: CNY17
Category: Optocouplers - analog output
Description: Optocoupler; SMD; Ch: 1; OUT: transistor; Uinsul: 4.17kV; Uce: 70V
Type of optocoupler: optocoupler
Mounting: SMD
Number of channels: 1
Kind of output: transistor
Insulation voltage: 4.17kV
CTR@If: 63-125%@10mA
Collector-emitter voltage: 70V
Case: Gull wing 6
Turn-on time: 2µs
Turn-off time: 3µs
Manufacturer series: CNY17
на замовлення 114 шт:
термін постачання 14-30 дні (днів)
| Кількість | Ціна без ПДВ |
|---|---|
| 11+ | 41.55 грн |
| 17+ | 25.33 грн |
| 50+ | 20.63 грн |
| 100+ | 18.70 грн |
| CNY173SM |
|
Виробник: ONSEMI
Category: Optocouplers - analog output
Description: Optocoupler; SMD; Ch: 1; OUT: transistor; Uinsul: 4.17kV; Uce: 70V
Type of optocoupler: optocoupler
Mounting: SMD
Number of channels: 1
Kind of output: transistor
Insulation voltage: 4.17kV
CTR@If: 100-200%@10mA
Collector-emitter voltage: 70V
Case: Gull wing 6
Turn-on time: 2µs
Turn-off time: 3µs
Manufacturer series: CNY17
Category: Optocouplers - analog output
Description: Optocoupler; SMD; Ch: 1; OUT: transistor; Uinsul: 4.17kV; Uce: 70V
Type of optocoupler: optocoupler
Mounting: SMD
Number of channels: 1
Kind of output: transistor
Insulation voltage: 4.17kV
CTR@If: 100-200%@10mA
Collector-emitter voltage: 70V
Case: Gull wing 6
Turn-on time: 2µs
Turn-off time: 3µs
Manufacturer series: CNY17
на замовлення 867 шт:
термін постачання 14-30 дні (днів)
| Кількість | Ціна без ПДВ |
|---|---|
| 11+ | 41.55 грн |
| 19+ | 23.15 грн |
| 25+ | 21.22 грн |
| 50+ | 19.71 грн |
| 100+ | 19.62 грн |
| CNY174SM |
|
Виробник: ONSEMI
Category: Optocouplers - analog output
Description: Optocoupler; SMD; Ch: 1; OUT: transistor; Uinsul: 4.17kV; Uce: 70V
Type of optocoupler: optocoupler
Mounting: SMD
Number of channels: 1
Kind of output: transistor
Insulation voltage: 4.17kV
CTR@If: 160-320%@10mA
Collector-emitter voltage: 70V
Case: Gull wing 6
Turn-on time: 2µs
Turn-off time: 3µs
Manufacturer series: CNY17
Category: Optocouplers - analog output
Description: Optocoupler; SMD; Ch: 1; OUT: transistor; Uinsul: 4.17kV; Uce: 70V
Type of optocoupler: optocoupler
Mounting: SMD
Number of channels: 1
Kind of output: transistor
Insulation voltage: 4.17kV
CTR@If: 160-320%@10mA
Collector-emitter voltage: 70V
Case: Gull wing 6
Turn-on time: 2µs
Turn-off time: 3µs
Manufacturer series: CNY17
на замовлення 603 шт:
термін постачання 14-30 дні (днів)
| Кількість | Ціна без ПДВ |
|---|---|
| 11+ | 41.55 грн |
| 15+ | 28.35 грн |
| 50+ | 23.99 грн |
| 100+ | 22.22 грн |
| 500+ | 18.11 грн |
| CNY172SVM |
|
Виробник: ONSEMI
Category: Optocouplers - analog output
Description: Optocoupler; SMD; Ch: 1; OUT: transistor; Uinsul: 4.17kV; Uce: 70V
Type of optocoupler: optocoupler
Mounting: SMD
Number of channels: 1
Kind of output: transistor
Insulation voltage: 4.17kV
CTR@If: 63-125%@10mA
Collector-emitter voltage: 70V
Case: Gull wing 6
Turn-on time: 2µs
Turn-off time: 3µs
Manufacturer series: CNY17
Category: Optocouplers - analog output
Description: Optocoupler; SMD; Ch: 1; OUT: transistor; Uinsul: 4.17kV; Uce: 70V
Type of optocoupler: optocoupler
Mounting: SMD
Number of channels: 1
Kind of output: transistor
Insulation voltage: 4.17kV
CTR@If: 63-125%@10mA
Collector-emitter voltage: 70V
Case: Gull wing 6
Turn-on time: 2µs
Turn-off time: 3µs
Manufacturer series: CNY17
на замовлення 382 шт:
термін постачання 14-30 дні (днів)
| Кількість | Ціна без ПДВ |
|---|---|
| 18+ | 25.29 грн |
| 40+ | 10.73 грн |
| 47+ | 8.97 грн |
| 100+ | 7.38 грн |
| CNY171SR2VM |
|
Виробник: ONSEMI
Category: Optocouplers - analog output
Description: Optocoupler; SMD; Ch: 1; OUT: transistor; Uinsul: 4.17kV; Uce: 70V
Type of optocoupler: optocoupler
Mounting: SMD
Number of channels: 1
Kind of output: transistor
Insulation voltage: 4.17kV
CTR@If: 40-80%@10mA
Collector-emitter voltage: 70V
Case: Gull wing 6
Turn-on time: 2µs
Turn-off time: 3µs
Manufacturer series: CNY17
Category: Optocouplers - analog output
Description: Optocoupler; SMD; Ch: 1; OUT: transistor; Uinsul: 4.17kV; Uce: 70V
Type of optocoupler: optocoupler
Mounting: SMD
Number of channels: 1
Kind of output: transistor
Insulation voltage: 4.17kV
CTR@If: 40-80%@10mA
Collector-emitter voltage: 70V
Case: Gull wing 6
Turn-on time: 2µs
Turn-off time: 3µs
Manufacturer series: CNY17
на замовлення 198 шт:
термін постачання 14-30 дні (днів)
| Кількість | Ціна без ПДВ |
|---|---|
| 12+ | 37.93 грн |
| 29+ | 14.59 грн |
| 35+ | 12.08 грн |
| 100+ | 10.57 грн |
| CNY17F4SR2VM |
|
Виробник: ONSEMI
Category: Optocouplers - analog output
Description: Optocoupler; SMD; Ch: 1; OUT: transistor; Uinsul: 4.17kV; Uce: 70V
Type of optocoupler: optocoupler
Mounting: SMD
Number of channels: 1
Kind of output: transistor
Insulation voltage: 4.17kV
CTR@If: 160-320%@10mA
Collector-emitter voltage: 70V
Case: Gull wing 6
Turn-on time: 2µs
Turn-off time: 3µs
Manufacturer series: CNY17
Category: Optocouplers - analog output
Description: Optocoupler; SMD; Ch: 1; OUT: transistor; Uinsul: 4.17kV; Uce: 70V
Type of optocoupler: optocoupler
Mounting: SMD
Number of channels: 1
Kind of output: transistor
Insulation voltage: 4.17kV
CTR@If: 160-320%@10mA
Collector-emitter voltage: 70V
Case: Gull wing 6
Turn-on time: 2µs
Turn-off time: 3µs
Manufacturer series: CNY17
на замовлення 4 шт:
термін постачання 14-30 дні (днів)
| Кількість | Ціна без ПДВ |
|---|---|
| 4+ | 112.90 грн |
| CNY17F2M |
|
Виробник: ONSEMI
Category: Optocouplers - analog output
Description: Optocoupler; THT; Ch: 1; OUT: transistor; Uinsul: 4.17kV; Uce: 70V
Type of optocoupler: optocoupler
Mounting: THT
Number of channels: 1
Kind of output: transistor
Insulation voltage: 4.17kV
CTR@If: 63-125%@10mA
Collector-emitter voltage: 70V
Case: DIP6
Turn-on time: 10µs
Turn-off time: 10µs
Manufacturer series: CNY17
Max. off-state voltage: 6V
Category: Optocouplers - analog output
Description: Optocoupler; THT; Ch: 1; OUT: transistor; Uinsul: 4.17kV; Uce: 70V
Type of optocoupler: optocoupler
Mounting: THT
Number of channels: 1
Kind of output: transistor
Insulation voltage: 4.17kV
CTR@If: 63-125%@10mA
Collector-emitter voltage: 70V
Case: DIP6
Turn-on time: 10µs
Turn-off time: 10µs
Manufacturer series: CNY17
Max. off-state voltage: 6V
на замовлення 859 шт:
термін постачання 14-30 дні (днів)
| Кількість | Ціна без ПДВ |
|---|---|
| 12+ | 40.64 грн |
| 17+ | 25.33 грн |
| 50+ | 21.39 грн |
| 100+ | 19.79 грн |
| 500+ | 16.02 грн |
| FAN3121TMPX |
|
Виробник: ONSEMI
Category: MOSFET/IGBT drivers
Description: IC: driver; low-side,MOSFET gate driver; MillerDrive™; WDFN8
Type of integrated circuit: driver
Kind of integrated circuit: low-side; MOSFET gate driver
Technology: MillerDrive™
Case: WDFN8
Output current: -11.4...10.6A
Number of channels: 1
Supply voltage: 4.5...18V DC
Mounting: SMD
Operating temperature: -55...150°C
Kind of package: reel; tape
Kind of output: inverting
Pulse fall time: 19ns
Impulse rise time: 23ns
Category: MOSFET/IGBT drivers
Description: IC: driver; low-side,MOSFET gate driver; MillerDrive™; WDFN8
Type of integrated circuit: driver
Kind of integrated circuit: low-side; MOSFET gate driver
Technology: MillerDrive™
Case: WDFN8
Output current: -11.4...10.6A
Number of channels: 1
Supply voltage: 4.5...18V DC
Mounting: SMD
Operating temperature: -55...150°C
Kind of package: reel; tape
Kind of output: inverting
Pulse fall time: 19ns
Impulse rise time: 23ns
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В кошику
од. на суму грн.
| FAN3121TMPX |
|
Виробник: ONSEMI
Category: MOSFET/IGBT drivers
Description: IC: driver; low-side,MOSFET gate driver; MillerDrive™; WDFN8
Type of integrated circuit: driver
Kind of integrated circuit: low-side; MOSFET gate driver
Technology: MillerDrive™
Case: WDFN8
Output current: -11.4...10.6A
Number of channels: 1
Supply voltage: 4.5...18V DC
Mounting: SMD
Operating temperature: -55...150°C
Kind of package: reel; tape
Kind of output: non-inverting
Pulse fall time: 19ns
Impulse rise time: 23ns
Category: MOSFET/IGBT drivers
Description: IC: driver; low-side,MOSFET gate driver; MillerDrive™; WDFN8
Type of integrated circuit: driver
Kind of integrated circuit: low-side; MOSFET gate driver
Technology: MillerDrive™
Case: WDFN8
Output current: -11.4...10.6A
Number of channels: 1
Supply voltage: 4.5...18V DC
Mounting: SMD
Operating temperature: -55...150°C
Kind of package: reel; tape
Kind of output: non-inverting
Pulse fall time: 19ns
Impulse rise time: 23ns
товару немає в наявності
В кошику
од. на суму грн.
| MC74HC157ADTR2G |
|
Виробник: ONSEMI
Category: Decoders, multiplexers, switches
Description: IC: digital; multiplexer,data selector; Ch: 4; IN: 2; TTL; SMD; HC; HC
Type of integrated circuit: digital
Mounting: SMD
Case: TSSOP16
Operating temperature: -40...85°C
Supply voltage: 2...6V DC
Kind of package: reel; tape
Kind of integrated circuit: data selector; multiplexer
Number of channels: 4
Manufacturer series: HC
Technology: TTL
Number of inputs: 2
Family: HC
Category: Decoders, multiplexers, switches
Description: IC: digital; multiplexer,data selector; Ch: 4; IN: 2; TTL; SMD; HC; HC
Type of integrated circuit: digital
Mounting: SMD
Case: TSSOP16
Operating temperature: -40...85°C
Supply voltage: 2...6V DC
Kind of package: reel; tape
Kind of integrated circuit: data selector; multiplexer
Number of channels: 4
Manufacturer series: HC
Technology: TTL
Number of inputs: 2
Family: HC
товару немає в наявності
В кошику
од. на суму грн.
| MC74HC157ADR2G |
|
Виробник: ONSEMI
Category: Decoders, multiplexers, switches
Description: IC: digital; multiplexer,data selector; Ch: 4; IN: 2; TTL; SMD; SO16
Type of integrated circuit: digital
Mounting: SMD
Case: SO16
Operating temperature: -40...85°C
Supply voltage: 2...6V DC
Kind of package: reel; tape
Kind of integrated circuit: data selector; multiplexer
Number of channels: 4
Manufacturer series: HC
Technology: TTL
Number of inputs: 2
Family: HC
Category: Decoders, multiplexers, switches
Description: IC: digital; multiplexer,data selector; Ch: 4; IN: 2; TTL; SMD; SO16
Type of integrated circuit: digital
Mounting: SMD
Case: SO16
Operating temperature: -40...85°C
Supply voltage: 2...6V DC
Kind of package: reel; tape
Kind of integrated circuit: data selector; multiplexer
Number of channels: 4
Manufacturer series: HC
Technology: TTL
Number of inputs: 2
Family: HC
товару немає в наявності
Мінімальне замовлення: 2500 шт
В кошику
од. на суму грн.
| MC74HC157ADTR2G-Q |
|
Виробник: ONSEMI
Category: Decoders, multiplexers, switches
Description: IC: digital; multiplexer,data selector; Ch: 4; IN: 2; SMD; TSSOP16
Type of integrated circuit: digital
Mounting: SMD
Case: TSSOP16
Operating temperature: -55...125°C
Supply voltage: 2...6V
Kind of integrated circuit: data selector; multiplexer
Number of channels: 4
Delay time: 160ns
Number of inputs: 2
Family: HC
Number of outputs: 4
Category: Decoders, multiplexers, switches
Description: IC: digital; multiplexer,data selector; Ch: 4; IN: 2; SMD; TSSOP16
Type of integrated circuit: digital
Mounting: SMD
Case: TSSOP16
Operating temperature: -55...125°C
Supply voltage: 2...6V
Kind of integrated circuit: data selector; multiplexer
Number of channels: 4
Delay time: 160ns
Number of inputs: 2
Family: HC
Number of outputs: 4
товару немає в наявності
В кошику
од. на суму грн.
| NVMFWS004N10MCT1G |
|
Виробник: ONSEMI
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 100V; 138A; Idm: 900A; 82W; DFN5
Kind of package: reel; tape
Case: DFN5
On-state resistance: 3.9mΩ
Mounting: SMD
Pulsed drain current: 900A
Power dissipation: 82W
Gate charge: 48nC
Polarisation: unipolar
Drain current: 138A
Kind of channel: enhancement
Drain-source voltage: 100V
Type of transistor: N-MOSFET
Gate-source voltage: ±20V
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 100V; 138A; Idm: 900A; 82W; DFN5
Kind of package: reel; tape
Case: DFN5
On-state resistance: 3.9mΩ
Mounting: SMD
Pulsed drain current: 900A
Power dissipation: 82W
Gate charge: 48nC
Polarisation: unipolar
Drain current: 138A
Kind of channel: enhancement
Drain-source voltage: 100V
Type of transistor: N-MOSFET
Gate-source voltage: ±20V
товару немає в наявності
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од. на суму грн.
| NVMFWS3D6N10MCLT1G |
|
Виробник: ONSEMI
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 100V; 132A; Idm: 888A; 69W; DFNW5
Kind of package: reel; tape
Case: DFNW5
On-state resistance: 3.6mΩ
Mounting: SMD
Pulsed drain current: 888A
Power dissipation: 69W
Gate charge: 60nC
Polarisation: unipolar
Drain current: 132A
Kind of channel: enhancement
Drain-source voltage: 100V
Type of transistor: N-MOSFET
Gate-source voltage: ±20V
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 100V; 132A; Idm: 888A; 69W; DFNW5
Kind of package: reel; tape
Case: DFNW5
On-state resistance: 3.6mΩ
Mounting: SMD
Pulsed drain current: 888A
Power dissipation: 69W
Gate charge: 60nC
Polarisation: unipolar
Drain current: 132A
Kind of channel: enhancement
Drain-source voltage: 100V
Type of transistor: N-MOSFET
Gate-source voltage: ±20V
товару немає в наявності
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од. на суму грн.
| NVMFWS002N10MCLT1G |
|
Виробник: ONSEMI
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 100V; 177A; Idm: 900A; 97W; DFN5
Kind of package: reel; tape
Case: DFN5
On-state resistance: 2.8mΩ
Mounting: SMD
Pulsed drain current: 900A
Power dissipation: 97W
Gate charge: 97nC
Polarisation: unipolar
Drain current: 177A
Kind of channel: enhancement
Drain-source voltage: 100V
Type of transistor: N-MOSFET
Gate-source voltage: ±20V
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 100V; 177A; Idm: 900A; 97W; DFN5
Kind of package: reel; tape
Case: DFN5
On-state resistance: 2.8mΩ
Mounting: SMD
Pulsed drain current: 900A
Power dissipation: 97W
Gate charge: 97nC
Polarisation: unipolar
Drain current: 177A
Kind of channel: enhancement
Drain-source voltage: 100V
Type of transistor: N-MOSFET
Gate-source voltage: ±20V
товару немає в наявності
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од. на суму грн.
| NVMFWS005N10MCLT1G |
|
Виробник: ONSEMI
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 100V; 108A; Idm: 695A; 65W; DFN5
Kind of package: reel; tape
Case: DFN5
On-state resistance: 5.1mΩ
Mounting: SMD
Pulsed drain current: 695A
Power dissipation: 65W
Gate charge: 55nC
Polarisation: unipolar
Drain current: 108A
Kind of channel: enhancement
Drain-source voltage: 100V
Type of transistor: N-MOSFET
Gate-source voltage: ±20V
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 100V; 108A; Idm: 695A; 65W; DFN5
Kind of package: reel; tape
Case: DFN5
On-state resistance: 5.1mΩ
Mounting: SMD
Pulsed drain current: 695A
Power dissipation: 65W
Gate charge: 55nC
Polarisation: unipolar
Drain current: 108A
Kind of channel: enhancement
Drain-source voltage: 100V
Type of transistor: N-MOSFET
Gate-source voltage: ±20V
товару немає в наявності
В кошику
од. на суму грн.
| NVMFWS021N10MCLT1G |
|
Виробник: ONSEMI
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 100V; 31A; Idm: 159A; 24W; DFNW5
Kind of package: reel; tape
Case: DFNW5
On-state resistance: 23mΩ
Mounting: SMD
Pulsed drain current: 159A
Power dissipation: 24W
Gate charge: 13nC
Polarisation: unipolar
Drain current: 31A
Kind of channel: enhancement
Drain-source voltage: 100V
Type of transistor: N-MOSFET
Gate-source voltage: ±20V
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 100V; 31A; Idm: 159A; 24W; DFNW5
Kind of package: reel; tape
Case: DFNW5
On-state resistance: 23mΩ
Mounting: SMD
Pulsed drain current: 159A
Power dissipation: 24W
Gate charge: 13nC
Polarisation: unipolar
Drain current: 31A
Kind of channel: enhancement
Drain-source voltage: 100V
Type of transistor: N-MOSFET
Gate-source voltage: ±20V
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| MMBT918LT1G |
|
Виробник: ONSEMI
Category: NPN SMD transistors
Description: Transistor: NPN; bipolar; RF; 15V; 50mA; 225/300mW; SOT23
Type of transistor: NPN
Polarisation: bipolar
Kind of transistor: RF
Collector-emitter voltage: 15V
Collector current: 50mA
Power dissipation: 0.225/0.3W
Case: SOT23
Current gain: 20
Mounting: SMD
Frequency: 600MHz
Kind of package: reel; tape
Category: NPN SMD transistors
Description: Transistor: NPN; bipolar; RF; 15V; 50mA; 225/300mW; SOT23
Type of transistor: NPN
Polarisation: bipolar
Kind of transistor: RF
Collector-emitter voltage: 15V
Collector current: 50mA
Power dissipation: 0.225/0.3W
Case: SOT23
Current gain: 20
Mounting: SMD
Frequency: 600MHz
Kind of package: reel; tape
на замовлення 2218 шт:
термін постачання 14-30 дні (днів)
| Кількість | Ціна без ПДВ |
|---|---|
| 56+ | 8.13 грн |
| 68+ | 6.21 грн |
| 77+ | 5.45 грн |
| 92+ | 4.60 грн |
| 103+ | 4.11 грн |
| 113+ | 3.72 грн |
| 250+ | 3.46 грн |
| 500+ | 3.35 грн |
| MMBT5179 |
|
Виробник: ONSEMI
Category: NPN SMD transistors
Description: Transistor: NPN; bipolar; RF; 12V; 0.05A; 0.225W; SOT23
Type of transistor: NPN
Polarisation: bipolar
Kind of transistor: RF
Collector-emitter voltage: 12V
Collector current: 50mA
Power dissipation: 0.225W
Case: SOT23
Mounting: SMD
Frequency: 2GHz
Kind of package: reel; tape
Category: NPN SMD transistors
Description: Transistor: NPN; bipolar; RF; 12V; 0.05A; 0.225W; SOT23
Type of transistor: NPN
Polarisation: bipolar
Kind of transistor: RF
Collector-emitter voltage: 12V
Collector current: 50mA
Power dissipation: 0.225W
Case: SOT23
Mounting: SMD
Frequency: 2GHz
Kind of package: reel; tape
на замовлення 2978 шт:
термін постачання 14-30 дні (днів)
| Кількість | Ціна без ПДВ |
|---|---|
| 72+ | 6.32 грн |
| 90+ | 4.70 грн |
| 105+ | 4.03 грн |
| 124+ | 3.39 грн |
| 140+ | 3.00 грн |
| 155+ | 2.72 грн |
| DTA143ZET1G |
|
Виробник: ONSEMI
Category: PNP SMD transistors
Description: Transistor: PNP; bipolar; BRT; 50V; 0.1A; 0.2W; SC75,SOT416; R2: 47kΩ
Type of transistor: PNP
Polarisation: bipolar
Kind of transistor: BRT
Collector-emitter voltage: 50V
Collector current: 0.1A
Power dissipation: 0.2W
Case: SC75; SOT416
Current gain: 80...140
Mounting: SMD
Kind of package: reel; tape
Base resistor: 4.7kΩ
Base-emitter resistor: 47kΩ
Category: PNP SMD transistors
Description: Transistor: PNP; bipolar; BRT; 50V; 0.1A; 0.2W; SC75,SOT416; R2: 47kΩ
Type of transistor: PNP
Polarisation: bipolar
Kind of transistor: BRT
Collector-emitter voltage: 50V
Collector current: 0.1A
Power dissipation: 0.2W
Case: SC75; SOT416
Current gain: 80...140
Mounting: SMD
Kind of package: reel; tape
Base resistor: 4.7kΩ
Base-emitter resistor: 47kΩ
на замовлення 2910 шт:
термін постачання 14-30 дні (днів)
| Кількість | Ціна без ПДВ |
|---|---|
| 39+ | 11.74 грн |
| 49+ | 8.72 грн |
| 57+ | 7.38 грн |
| 102+ | 4.13 грн |
| 500+ | 2.90 грн |
| 1000+ | 2.56 грн |
| DTA143ZM3T5G |
|
Виробник: ONSEMI
Category: PNP SMD transistors
Description: Transistor: PNP; bipolar; BRT; 50V; 100mA; 600mW; SOT723; R1: 4.7kΩ
Type of transistor: PNP
Polarisation: bipolar
Kind of transistor: BRT
Collector-emitter voltage: 50V
Collector current: 0.1A
Power dissipation: 0.6W
Case: SOT723
Current gain: 80...140
Mounting: SMD
Kind of package: reel; tape
Base resistor: 4.7kΩ
Base-emitter resistor: 47kΩ
Manufacturer standard package: 8000pcs.
Category: PNP SMD transistors
Description: Transistor: PNP; bipolar; BRT; 50V; 100mA; 600mW; SOT723; R1: 4.7kΩ
Type of transistor: PNP
Polarisation: bipolar
Kind of transistor: BRT
Collector-emitter voltage: 50V
Collector current: 0.1A
Power dissipation: 0.6W
Case: SOT723
Current gain: 80...140
Mounting: SMD
Kind of package: reel; tape
Base resistor: 4.7kΩ
Base-emitter resistor: 47kΩ
Manufacturer standard package: 8000pcs.
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| DTA143EET1G |
Виробник: ONSEMI
Category: PNP SMD transistors
Description: Transistor: PNP; bipolar; BRT; 50V; 100mA; 300mW; SC75,SOT416
Type of transistor: PNP
Polarisation: bipolar
Kind of transistor: BRT
Collector-emitter voltage: 50V
Collector current: 0.1A
Power dissipation: 0.3W
Case: SC75; SOT416
Current gain: 15...27
Mounting: SMD
Kind of package: reel; tape
Base resistor: 4.7kΩ
Base-emitter resistor: 4.7kΩ
Manufacturer standard package: 3000pcs.
Category: PNP SMD transistors
Description: Transistor: PNP; bipolar; BRT; 50V; 100mA; 300mW; SC75,SOT416
Type of transistor: PNP
Polarisation: bipolar
Kind of transistor: BRT
Collector-emitter voltage: 50V
Collector current: 0.1A
Power dissipation: 0.3W
Case: SC75; SOT416
Current gain: 15...27
Mounting: SMD
Kind of package: reel; tape
Base resistor: 4.7kΩ
Base-emitter resistor: 4.7kΩ
Manufacturer standard package: 3000pcs.
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| DTA143EM3T5G |
|
Виробник: ONSEMI
Category: PNP SMD transistors
Description: Transistor: PNP; bipolar; BRT; 50V; 100mA; 600mW; SOT723; R1: 4.7kΩ
Type of transistor: PNP
Polarisation: bipolar
Kind of transistor: BRT
Collector-emitter voltage: 50V
Collector current: 0.1A
Power dissipation: 0.6W
Case: SOT723
Current gain: 15...27
Mounting: SMD
Kind of package: reel; tape
Base resistor: 4.7kΩ
Base-emitter resistor: 4.7kΩ
Manufacturer standard package: 8000pcs.
Category: PNP SMD transistors
Description: Transistor: PNP; bipolar; BRT; 50V; 100mA; 600mW; SOT723; R1: 4.7kΩ
Type of transistor: PNP
Polarisation: bipolar
Kind of transistor: BRT
Collector-emitter voltage: 50V
Collector current: 0.1A
Power dissipation: 0.6W
Case: SOT723
Current gain: 15...27
Mounting: SMD
Kind of package: reel; tape
Base resistor: 4.7kΩ
Base-emitter resistor: 4.7kΩ
Manufacturer standard package: 8000pcs.
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| DTA143TET1G |
|
Виробник: ONSEMI
Category: PNP SMD transistors
Description: Transistor: PNP; bipolar; BRT; 50V; 100mA; 300mW; SC75,SOT416; 4.7kΩ
Type of transistor: PNP
Polarisation: bipolar
Kind of transistor: BRT
Collector-emitter voltage: 50V
Collector current: 0.1A
Power dissipation: 0.3W
Case: SC75; SOT416
Current gain: 160...250
Mounting: SMD
Kind of package: reel; tape
Base resistor: 4.7kΩ
Manufacturer standard package: 3000pcs.
Category: PNP SMD transistors
Description: Transistor: PNP; bipolar; BRT; 50V; 100mA; 300mW; SC75,SOT416; 4.7kΩ
Type of transistor: PNP
Polarisation: bipolar
Kind of transistor: BRT
Collector-emitter voltage: 50V
Collector current: 0.1A
Power dissipation: 0.3W
Case: SC75; SOT416
Current gain: 160...250
Mounting: SMD
Kind of package: reel; tape
Base resistor: 4.7kΩ
Manufacturer standard package: 3000pcs.
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В кошику
од. на суму грн.
| DTA143TM3T5G |
|
Виробник: ONSEMI
Category: PNP SMD transistors
Description: Transistor: PNP; bipolar; BRT; 50V; 100mA; SOT723; 4.7kΩ
Type of transistor: PNP
Polarisation: bipolar
Kind of transistor: BRT
Collector-emitter voltage: 50V
Collector current: 0.1A
Case: SOT723
Mounting: SMD
Kind of package: reel; tape
Base resistor: 4.7kΩ
Manufacturer standard package: 8000pcs.
Category: PNP SMD transistors
Description: Transistor: PNP; bipolar; BRT; 50V; 100mA; SOT723; 4.7kΩ
Type of transistor: PNP
Polarisation: bipolar
Kind of transistor: BRT
Collector-emitter voltage: 50V
Collector current: 0.1A
Case: SOT723
Mounting: SMD
Kind of package: reel; tape
Base resistor: 4.7kΩ
Manufacturer standard package: 8000pcs.
товару немає в наявності
Мінімальне замовлення: 8000 шт
В кошику
од. на суму грн.
| MMSZ5242B |
|
Виробник: ONSEMI
Category: SMD Zener diodes
Description: Diode: Zener; 0.5W; 12V; SMD; SOD123; single diode; reel,tape
Type of diode: Zener
Power dissipation: 0.5W
Zener voltage: 12V
Mounting: SMD
Tolerance: ±5%
Case: SOD123
Semiconductor structure: single diode
Kind of package: reel; tape
Manufacturer series: MMSZ52xxB
Category: SMD Zener diodes
Description: Diode: Zener; 0.5W; 12V; SMD; SOD123; single diode; reel,tape
Type of diode: Zener
Power dissipation: 0.5W
Zener voltage: 12V
Mounting: SMD
Tolerance: ±5%
Case: SOD123
Semiconductor structure: single diode
Kind of package: reel; tape
Manufacturer series: MMSZ52xxB
товару немає в наявності
Мінімальне замовлення: 10 шт
В кошику
од. на суму грн.
| MUR620CTG |
|
Виробник: ONSEMI
Category: THT universal diodes
Description: Diode: rectifying; THT; 200V; 6A; Ifsm: 75A; TO220AB; tube; 35ns
Mounting: THT
Reverse recovery time: 35ns
Max. forward impulse current: 75A
Max. off-state voltage: 200V
Load current: 6A
Kind of package: tube
Semiconductor structure: common cathode; double
Case: TO220AB
Type of diode: rectifying
Category: THT universal diodes
Description: Diode: rectifying; THT; 200V; 6A; Ifsm: 75A; TO220AB; tube; 35ns
Mounting: THT
Reverse recovery time: 35ns
Max. forward impulse current: 75A
Max. off-state voltage: 200V
Load current: 6A
Kind of package: tube
Semiconductor structure: common cathode; double
Case: TO220AB
Type of diode: rectifying
товару немає в наявності
В кошику
од. на суму грн.
| FCB070N65S3 |
|
Виробник: ONSEMI
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 650V; 44A; 312W; D2PAK
Case: D2PAK
Mounting: SMD
Kind of package: reel; tape
Kind of channel: enhancement
Drain-source voltage: 650V
Type of transistor: N-MOSFET
Gate-source voltage: ±30V
On-state resistance: 70mΩ
Power dissipation: 312W
Polarisation: unipolar
Drain current: 44A
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 650V; 44A; 312W; D2PAK
Case: D2PAK
Mounting: SMD
Kind of package: reel; tape
Kind of channel: enhancement
Drain-source voltage: 650V
Type of transistor: N-MOSFET
Gate-source voltage: ±30V
On-state resistance: 70mΩ
Power dissipation: 312W
Polarisation: unipolar
Drain current: 44A
на замовлення 430 шт:
термін постачання 14-30 дні (днів)
| Кількість | Ціна без ПДВ |
|---|---|
| 1+ | 535.57 грн |
| 10+ | 337.98 грн |
| 100+ | 298.56 грн |
| NTMFS010N10GTWG |
|
Виробник: ONSEMI
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 100V; 83A; Idm: 1247A; 75W; PQFN8
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 100V
Drain current: 83A
Pulsed drain current: 1247A
Power dissipation: 75W
Case: PQFN8
Gate-source voltage: ±20V
On-state resistance: 10.8mΩ
Mounting: SMD
Gate charge: 58.5nC
Kind of package: reel; tape
Kind of channel: enhancement
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 100V; 83A; Idm: 1247A; 75W; PQFN8
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 100V
Drain current: 83A
Pulsed drain current: 1247A
Power dissipation: 75W
Case: PQFN8
Gate-source voltage: ±20V
On-state resistance: 10.8mΩ
Mounting: SMD
Gate charge: 58.5nC
Kind of package: reel; tape
Kind of channel: enhancement
товару немає в наявності
Мінімальне замовлення: 3000 шт
В кошику
од. на суму грн.
| NTTFS010N10MCLTAG |
|
Виробник: ONSEMI
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 100V; 50A; Idm: 250A; 52W; WDFN8
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 100V
Drain current: 50A
Pulsed drain current: 250A
Power dissipation: 52W
Case: WDFN8
Gate-source voltage: ±20V
On-state resistance: 10.6mΩ
Mounting: SMD
Gate charge: 22nC
Kind of package: reel; tape
Kind of channel: enhancement
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 100V; 50A; Idm: 250A; 52W; WDFN8
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 100V
Drain current: 50A
Pulsed drain current: 250A
Power dissipation: 52W
Case: WDFN8
Gate-source voltage: ±20V
On-state resistance: 10.6mΩ
Mounting: SMD
Gate charge: 22nC
Kind of package: reel; tape
Kind of channel: enhancement
товару немає в наявності
Мінімальне замовлення: 1500 шт
В кошику
од. на суму грн.
| NSS60600MZ4T1G |
|
Виробник: ONSEMI
Category: PNP SMD transistors
Description: Transistor: PNP; bipolar; 60V; 6A; 2W; SOT223-4,TO261-4
Type of transistor: PNP
Polarisation: bipolar
Collector-emitter voltage: 60V
Collector current: 6A
Power dissipation: 2W
Case: SOT223-4; TO261-4
Current gain: 120...360
Mounting: SMD
Kind of package: reel; tape
Frequency: 100MHz
Category: PNP SMD transistors
Description: Transistor: PNP; bipolar; 60V; 6A; 2W; SOT223-4,TO261-4
Type of transistor: PNP
Polarisation: bipolar
Collector-emitter voltage: 60V
Collector current: 6A
Power dissipation: 2W
Case: SOT223-4; TO261-4
Current gain: 120...360
Mounting: SMD
Kind of package: reel; tape
Frequency: 100MHz
на замовлення 819 шт:
термін постачання 14-30 дні (днів)
| Кількість | Ціна без ПДВ |
|---|---|
| 8+ | 60.51 грн |
| 12+ | 36.15 грн |
| 20+ | 32.29 грн |
| 50+ | 27.68 грн |
| 100+ | 24.74 грн |
| 200+ | 21.97 грн |
| 500+ | 18.87 грн |
| NSS60601MZ4T1G |
|
Виробник: ONSEMI
Category: NPN SMD transistors
Description: Transistor: NPN; bipolar; 60V; 6A; 2W; SOT223-4,TO261-4
Collector current: 6A
Mounting: SMD
Collector-emitter voltage: 60V
Power dissipation: 2W
Polarisation: bipolar
Type of transistor: NPN
Current gain: 120...360
Kind of package: reel; tape
Case: SOT223-4; TO261-4
Frequency: 100MHz
Category: NPN SMD transistors
Description: Transistor: NPN; bipolar; 60V; 6A; 2W; SOT223-4,TO261-4
Collector current: 6A
Mounting: SMD
Collector-emitter voltage: 60V
Power dissipation: 2W
Polarisation: bipolar
Type of transistor: NPN
Current gain: 120...360
Kind of package: reel; tape
Case: SOT223-4; TO261-4
Frequency: 100MHz
на замовлення 1000 шт:
термін постачання 14-30 дні (днів)
| Кількість | Ціна без ПДВ |
|---|---|
| 7+ | 67.74 грн |
| 11+ | 40.67 грн |
| 100+ | 26.84 грн |
| 200+ | 23.90 грн |
| 250+ | 23.06 грн |
| 500+ | 20.71 грн |
| 1000+ | 19.62 грн |
| MUR1100ERLG |
|
Виробник: ONSEMI
Category: THT universal diodes
Description: Diode: rectifying; THT; 1kV; 1A; Ifsm: 35A; CASE59; reel,tape; 75ns
Type of diode: rectifying
Mounting: THT
Max. off-state voltage: 1kV
Load current: 1A
Semiconductor structure: single diode
Features of semiconductor devices: ultrafast switching
Max. forward impulse current: 35A
Case: CASE59
Kind of package: reel; tape
Reverse recovery time: 75ns
Category: THT universal diodes
Description: Diode: rectifying; THT; 1kV; 1A; Ifsm: 35A; CASE59; reel,tape; 75ns
Type of diode: rectifying
Mounting: THT
Max. off-state voltage: 1kV
Load current: 1A
Semiconductor structure: single diode
Features of semiconductor devices: ultrafast switching
Max. forward impulse current: 35A
Case: CASE59
Kind of package: reel; tape
Reverse recovery time: 75ns
на замовлення 97 шт:
термін постачання 14-30 дні (днів)
| Кількість | Ціна без ПДВ |
|---|---|
| 7+ | 70.45 грн |
| 9+ | 46.96 грн |
| 11+ | 40.59 грн |
| 50+ | 29.35 грн |
| MUR1100EG |
|
Виробник: ONSEMI
Category: THT universal diodes
Description: Diode: rectifying; THT; 1kV; 1A; Ifsm: 35A; DO41; bulk; 100ns
Type of diode: rectifying
Mounting: THT
Max. off-state voltage: 1kV
Load current: 1A
Semiconductor structure: single diode
Max. forward impulse current: 35A
Case: DO41
Kind of package: bulk
Reverse recovery time: 100ns
Category: THT universal diodes
Description: Diode: rectifying; THT; 1kV; 1A; Ifsm: 35A; DO41; bulk; 100ns
Type of diode: rectifying
Mounting: THT
Max. off-state voltage: 1kV
Load current: 1A
Semiconductor structure: single diode
Max. forward impulse current: 35A
Case: DO41
Kind of package: bulk
Reverse recovery time: 100ns
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| MUN2211T3G |
|
Виробник: ONSEMI
Category: NPN SMD transistors
Description: Transistor: NPN; bipolar; BRT; 50V; 0.1A; 0.23W; SC59; R1: 10kΩ
Type of transistor: NPN
Polarisation: bipolar
Kind of transistor: BRT
Collector-emitter voltage: 50V
Collector current: 0.1A
Power dissipation: 0.23W
Case: SC59
Mounting: SMD
Kind of package: reel; tape
Base resistor: 10kΩ
Base-emitter resistor: 10kΩ
Current gain: 35...60
Category: NPN SMD transistors
Description: Transistor: NPN; bipolar; BRT; 50V; 0.1A; 0.23W; SC59; R1: 10kΩ
Type of transistor: NPN
Polarisation: bipolar
Kind of transistor: BRT
Collector-emitter voltage: 50V
Collector current: 0.1A
Power dissipation: 0.23W
Case: SC59
Mounting: SMD
Kind of package: reel; tape
Base resistor: 10kΩ
Base-emitter resistor: 10kΩ
Current gain: 35...60
товару немає в наявності
Мінімальне замовлення: 10000 шт
В кошику
од. на суму грн.
| SMUN2211T1G |
|
Виробник: ONSEMI
Category: NPN SMD transistors
Description: Transistor: NPN; bipolar; BRT; 50V; 0.1A; 0.23W; SC59; R1: 10kΩ
Type of transistor: NPN
Polarisation: bipolar
Kind of transistor: BRT
Collector-emitter voltage: 50V
Collector current: 0.1A
Power dissipation: 0.23W
Case: SC59
Mounting: SMD
Kind of package: reel; tape
Base resistor: 10kΩ
Application: automotive industry
Base-emitter resistor: 10kΩ
Category: NPN SMD transistors
Description: Transistor: NPN; bipolar; BRT; 50V; 0.1A; 0.23W; SC59; R1: 10kΩ
Type of transistor: NPN
Polarisation: bipolar
Kind of transistor: BRT
Collector-emitter voltage: 50V
Collector current: 0.1A
Power dissipation: 0.23W
Case: SC59
Mounting: SMD
Kind of package: reel; tape
Base resistor: 10kΩ
Application: automotive industry
Base-emitter resistor: 10kΩ
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В кошику
од. на суму грн.
| FGH50T65SQD-F155 |
|
Виробник: ONSEMI
Category: THT IGBT transistors
Description: Transistor: IGBT; 650V; 50A; 134W; TO247-3
Mounting: THT
Case: TO247-3
Features of semiconductor devices: integrated anti-parallel diode
Pulsed collector current: 200A
Type of transistor: IGBT
Kind of package: tube
Gate-emitter voltage: ±20V
Collector current: 50A
Collector-emitter voltage: 650V
Power dissipation: 134W
Gate charge: 99nC
Category: THT IGBT transistors
Description: Transistor: IGBT; 650V; 50A; 134W; TO247-3
Mounting: THT
Case: TO247-3
Features of semiconductor devices: integrated anti-parallel diode
Pulsed collector current: 200A
Type of transistor: IGBT
Kind of package: tube
Gate-emitter voltage: ±20V
Collector current: 50A
Collector-emitter voltage: 650V
Power dissipation: 134W
Gate charge: 99nC
на замовлення 340 шт:
термін постачання 14-30 дні (днів)
| Кількість | Ціна без ПДВ |
|---|---|
| 2+ | 312.49 грн |
| 3+ | 260.82 грн |
| 10+ | 230.63 грн |
| 30+ | 207.99 грн |
| 120+ | 192.89 грн |
| NTMD6N02R2G |
|
Виробник: ONSEMI
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 20V; 5.5A; 2W; SO8
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 20V
Drain current: 5.5A
Power dissipation: 2W
Case: SO8
Gate-source voltage: ±12V
On-state resistance: 35mΩ
Mounting: SMD
Kind of package: reel; tape
Kind of channel: enhancement
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 20V; 5.5A; 2W; SO8
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 20V
Drain current: 5.5A
Power dissipation: 2W
Case: SO8
Gate-source voltage: ±12V
On-state resistance: 35mΩ
Mounting: SMD
Kind of package: reel; tape
Kind of channel: enhancement
товару немає в наявності
Мінімальне замовлення: 2500 шт
В кошику
од. на суму грн.
| MMBZ20VALT1G |
|
Виробник: ONSEMI
Category: Protection diodes - arrays
Description: Diode: TVS array; 20V; 1.4A; 40W; double,common anode; ESD; SOT23
Max. forward impulse current: 1.4A
Peak pulse power dissipation: 40W
Version: ESD
Max. off-state voltage: 17V
Kind of package: reel; tape
Semiconductor structure: common anode; double
Leakage current: 50nA
Case: SOT23
Type of diode: TVS array
Number of channels: 2
Tolerance: ±5%
Mounting: SMD
Breakdown voltage: 20V
Category: Protection diodes - arrays
Description: Diode: TVS array; 20V; 1.4A; 40W; double,common anode; ESD; SOT23
Max. forward impulse current: 1.4A
Peak pulse power dissipation: 40W
Version: ESD
Max. off-state voltage: 17V
Kind of package: reel; tape
Semiconductor structure: common anode; double
Leakage current: 50nA
Case: SOT23
Type of diode: TVS array
Number of channels: 2
Tolerance: ±5%
Mounting: SMD
Breakdown voltage: 20V
на замовлення 873 шт:
термін постачання 14-30 дні (днів)
| Кількість | Ціна без ПДВ |
|---|---|
| 63+ | 7.23 грн |
| 74+ | 5.70 грн |
| 85+ | 4.95 грн |
| 136+ | 3.09 грн |
| 500+ | 2.46 грн |
| MMBZ20VAWT1G |
|
Виробник: ONSEMI
Category: Protection diodes - arrays
Description: Diode: TVS array; 20V; 1.4A; 40W; double,common anode; SC70; Ch: 2
Max. forward impulse current: 1.4A
Peak pulse power dissipation: 40W
Max. off-state voltage: 17V
Kind of package: reel; tape
Semiconductor structure: common anode; double
Case: SC70
Type of diode: TVS array
Number of channels: 2
Tolerance: ±5%
Mounting: SMD
Breakdown voltage: 20V
Category: Protection diodes - arrays
Description: Diode: TVS array; 20V; 1.4A; 40W; double,common anode; SC70; Ch: 2
Max. forward impulse current: 1.4A
Peak pulse power dissipation: 40W
Max. off-state voltage: 17V
Kind of package: reel; tape
Semiconductor structure: common anode; double
Case: SC70
Type of diode: TVS array
Number of channels: 2
Tolerance: ±5%
Mounting: SMD
Breakdown voltage: 20V
товару немає в наявності
В кошику
од. на суму грн.
| SZMMBZ20VALT1G |
|
Виробник: ONSEMI
Category: Protection diodes - arrays
Description: Diode: TVS array; 20V; 1.4A; 40W; double,common anode; SOT23; Ch: 2
Max. forward impulse current: 1.4A
Peak pulse power dissipation: 40W
Application: automotive industry
Max. off-state voltage: 17V
Kind of package: reel; tape
Semiconductor structure: common anode; double
Case: SOT23
Type of diode: TVS array
Number of channels: 2
Tolerance: ±5%
Mounting: SMD
Breakdown voltage: 20V
Category: Protection diodes - arrays
Description: Diode: TVS array; 20V; 1.4A; 40W; double,common anode; SOT23; Ch: 2
Max. forward impulse current: 1.4A
Peak pulse power dissipation: 40W
Application: automotive industry
Max. off-state voltage: 17V
Kind of package: reel; tape
Semiconductor structure: common anode; double
Case: SOT23
Type of diode: TVS array
Number of channels: 2
Tolerance: ±5%
Mounting: SMD
Breakdown voltage: 20V
товару немає в наявності
В кошику
од. на суму грн.
| SZMMBZ20VAWT1G |
|
Виробник: ONSEMI
Category: Protection diodes - arrays
Description: Diode: TVS array; 20V; 1.4A; 40W; double,common anode; SC70; Ch: 2
Max. forward impulse current: 1.4A
Peak pulse power dissipation: 40W
Application: automotive industry
Max. off-state voltage: 17V
Kind of package: reel; tape
Semiconductor structure: common anode; double
Case: SC70
Type of diode: TVS array
Number of channels: 2
Tolerance: ±5%
Mounting: SMD
Breakdown voltage: 20V
Category: Protection diodes - arrays
Description: Diode: TVS array; 20V; 1.4A; 40W; double,common anode; SC70; Ch: 2
Max. forward impulse current: 1.4A
Peak pulse power dissipation: 40W
Application: automotive industry
Max. off-state voltage: 17V
Kind of package: reel; tape
Semiconductor structure: common anode; double
Case: SC70
Type of diode: TVS array
Number of channels: 2
Tolerance: ±5%
Mounting: SMD
Breakdown voltage: 20V
товару немає в наявності
В кошику
од. на суму грн.
| MOC3051SR2VM |
|
Виробник: ONSEMI
Category: Optotriacs
Description: Optotriac; 4.17kV; Uout: 600V; triac; SMT6; Ch: 1; MOC305X; reel,tape
Type of optocoupler: optotriac
Insulation voltage: 4.17kV
Kind of output: triac
Case: SMT6
Max. off-state voltage: 3V
Trigger current: 15mA
Mounting: SMD
Number of channels: 1
Manufacturer series: MOC305X
Kind of package: reel; tape
Conform to the norm: VDE
Output voltage: 600V
Category: Optotriacs
Description: Optotriac; 4.17kV; Uout: 600V; triac; SMT6; Ch: 1; MOC305X; reel,tape
Type of optocoupler: optotriac
Insulation voltage: 4.17kV
Kind of output: triac
Case: SMT6
Max. off-state voltage: 3V
Trigger current: 15mA
Mounting: SMD
Number of channels: 1
Manufacturer series: MOC305X
Kind of package: reel; tape
Conform to the norm: VDE
Output voltage: 600V
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В кошику
од. на суму грн.