Фото | Назва | Виробник | Інформація |
Доступність |
Ціна без ПДВ |
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FDMC7692S-F126 | onsemi | Description: MOSFET N-CH 30V 12.5A/18A 8MLP |
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FDMC8884-F126 | onsemi |
Description: MOSFET N-CH 30V 9A/15A 8MLP Packaging: Tape & Reel (TR) Package / Case: 8-PowerWDFN Mounting Type: Surface Mount Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 9A (Ta), 15A (Tc) Rds On (Max) @ Id, Vgs: 19mOhm @ 9A, 10V Power Dissipation (Max): 2.3W (Ta), 18W (Tc) Vgs(th) (Max) @ Id: 2.5V @ 250µA Supplier Device Package: 8-MLP (3.3x3.3) Part Status: Obsolete Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 30 V Gate Charge (Qg) (Max) @ Vgs: 14 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 685 pF @ 15 V |
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FQB5N60CTM-WS | onsemi |
Description: MOSFET N-CH 600V 4.5A D2PAK Packaging: Tape & Reel (TR) Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB Mounting Type: Surface Mount Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 4.5A (Tc) Rds On (Max) @ Id, Vgs: 2.5Ohm @ 2.25A, 10V Power Dissipation (Max): 100W (Tc) Vgs(th) (Max) @ Id: 4V @ 250µA Supplier Device Package: TO-263 (D2Pak) Part Status: Obsolete Drive Voltage (Max Rds On, Min Rds On): 10V Vgs (Max): ±30V Drain to Source Voltage (Vdss): 600 V Gate Charge (Qg) (Max) @ Vgs: 19 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 670 pF @ 25 V |
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FQB8N60CTM-WS | onsemi |
Description: MOSFET N-CH 600V 7.5A D2PAK Packaging: Tape & Reel (TR) Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB Mounting Type: Surface Mount Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 7.5A (Tc) Rds On (Max) @ Id, Vgs: 1.2Ohm @ 3.75A, 10V Power Dissipation (Max): 3.13W (Ta), 147W (Tc) Vgs(th) (Max) @ Id: 4V @ 250µA Supplier Device Package: TO-263 (D2Pak) Part Status: Obsolete Drive Voltage (Max Rds On, Min Rds On): 10V Vgs (Max): ±30V Drain to Source Voltage (Vdss): 600 V Gate Charge (Qg) (Max) @ Vgs: 36 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 1255 pF @ 25 V |
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FQD2N60CTM-WS | onsemi |
Description: MOSFET N-CH 600V 1.9A DPAK Packaging: Tape & Reel (TR) Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63 Mounting Type: Surface Mount Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 1.9A (Tc) Rds On (Max) @ Id, Vgs: 4.7Ohm @ 950mA, 10V Power Dissipation (Max): 2.5W (Ta), 44W (Tc) Vgs(th) (Max) @ Id: 4V @ 250µA Supplier Device Package: TO-252AA Part Status: Obsolete Drive Voltage (Max Rds On, Min Rds On): 10V Vgs (Max): ±30V Drain to Source Voltage (Vdss): 600 V Gate Charge (Qg) (Max) @ Vgs: 12 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 235 pF @ 25 V |
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FQD4P40TM-AM002 | onsemi |
Description: MOSFET P-CH 400V 2.7A DPAK Packaging: Tape & Reel (TR) Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63 Mounting Type: Surface Mount Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: P-Channel Current - Continuous Drain (Id) @ 25°C: 2.7A (Tc) Rds On (Max) @ Id, Vgs: 3.1Ohm @ 1.35A, 10V Power Dissipation (Max): 2.5W (Ta), 50W (Tc) Vgs(th) (Max) @ Id: 5V @ 250µA Supplier Device Package: TO-252AA Part Status: Obsolete Drive Voltage (Max Rds On, Min Rds On): 10V Vgs (Max): ±30V Drain to Source Voltage (Vdss): 400 V Gate Charge (Qg) (Max) @ Vgs: 23 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 680 pF @ 25 V |
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FQD5N60CTM-WS | onsemi |
Description: MOSFET N-CH 600V 2.8A DPAK Packaging: Tape & Reel (TR) Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63 Mounting Type: Surface Mount Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 2.8A (Tc) Rds On (Max) @ Id, Vgs: 2.5Ohm @ 1.4A, 10V Power Dissipation (Max): 2.5W (Ta), 49W (Tc) Vgs(th) (Max) @ Id: 4V @ 250µA Supplier Device Package: TO-252AA Part Status: Obsolete Drive Voltage (Max Rds On, Min Rds On): 10V Vgs (Max): ±30V Drain to Source Voltage (Vdss): 600 V Gate Charge (Qg) (Max) @ Vgs: 19 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 670 pF @ 25 V |
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MDB10SV | onsemi |
Description: BRIDGE RECT 1P 1KV 1.2A MICRODIP Packaging: Tape & Reel (TR) Package / Case: 4-SMD, Gull Wing Mounting Type: Surface Mount Diode Type: Single Phase Operating Temperature: -55°C ~ 150°C (TJ) Technology: Standard Supplier Device Package: 4-MicroDIP/SMD Voltage - Peak Reverse (Max): 1 kV Current - Average Rectified (Io): 1.2 A Voltage - Forward (Vf) (Max) @ If: 1.015 V @ 1.2 A Current - Reverse Leakage @ Vr: 10 µA @ 1000 V |
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FDZ1416NZ | onsemi |
Description: MOSFET 2N-CH 4WLCSP Packaging: Tape & Reel (TR) Package / Case: 4-XFBGA, WLCSP Mounting Type: Surface Mount Configuration: 2 N-Channel (Dual) Common Drain Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) Power - Max: 500mW Gate Charge (Qg) (Max) @ Vgs: 17nC @ 4.5V Vgs(th) (Max) @ Id: 1.3V @ 250µA Supplier Device Package: 4-WLCSP (1.6x1.4) Part Status: Obsolete |
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NC7SB3157P6X-F080 | onsemi |
Description: IC SWITCH SPDT X 1 15OHM SC88 Packaging: Tape & Reel (TR) Package / Case: 6-TSSOP, SC-88, SOT-363 Mounting Type: Surface Mount Operating Temperature: -40°C ~ 85°C (TA) On-State Resistance (Max): 15Ohm -3db Bandwidth: 250MHz Supplier Device Package: SC-88 (SC-70-6) Voltage - Supply, Single (V+): 1.65V ~ 5.5V Charge Injection: 7pC Crosstalk: -54dB @ 10MHz Switch Circuit: SPDT Multiplexer/Demultiplexer Circuit: 2:1 Channel-to-Channel Matching (ΔRon): 150mOhm Switch Time (Ton, Toff) (Max): 5.2ns, 3.5ns Channel Capacitance (CS(off), CD(off)): 6.5pF Current - Leakage (IS(off)) (Max): 100nA Number of Circuits: 1 |
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NC7SB3157P6X-F40 | onsemi |
Description: IC SWITCH SPDT X 1 15OHM SC88 Packaging: Tape & Reel (TR) Package / Case: 6-TSSOP, SC-88, SOT-363 Mounting Type: Surface Mount Operating Temperature: -40°C ~ 85°C (TA) On-State Resistance (Max): 15Ohm -3db Bandwidth: 250MHz Supplier Device Package: SC-88 (SC-70-6) Voltage - Supply, Single (V+): 1.65V ~ 5.5V Charge Injection: 7pC Crosstalk: -54dB @ 10MHz Switch Circuit: SPDT Multiplexer/Demultiplexer Circuit: 2:1 Channel-to-Channel Matching (ΔRon): 150mOhm Switch Time (Ton, Toff) (Max): 5.2ns, 3.5ns Channel Capacitance (CS(off), CD(off)): 6.5pF Current - Leakage (IS(off)) (Max): 100nA Number of Circuits: 1 |
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FQA16N50-F109 | onsemi |
Description: MOSFET N-CH 500V 16A TO3P Packaging: Tube Package / Case: TO-3P-3, SC-65-3 Mounting Type: Through Hole Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 16A (Tc) Rds On (Max) @ Id, Vgs: 320mOhm @ 8A, 10V Power Dissipation (Max): 200W (Tc) Vgs(th) (Max) @ Id: 5V @ 250µA Supplier Device Package: TO-3P Part Status: Obsolete Drive Voltage (Max Rds On, Min Rds On): 10V Vgs (Max): ±30V Drain to Source Voltage (Vdss): 500 V Gate Charge (Qg) (Max) @ Vgs: 75 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 3000 pF @ 25 V |
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FQU5N50CTU-WS | onsemi |
Description: MOSFET N-CH 500V 4A IPAK Packaging: Tube Package / Case: TO-251-3 Short Leads, IPak, TO-251AA Mounting Type: Through Hole Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 4A (Tc) Rds On (Max) @ Id, Vgs: 1.4Ohm @ 2A, 10V Power Dissipation (Max): 2.5W (Ta), 48W (Tc) Vgs(th) (Max) @ Id: 4V @ 250µA Supplier Device Package: IPAK Part Status: Obsolete Drive Voltage (Max Rds On, Min Rds On): 10V Vgs (Max): ±30V Drain to Source Voltage (Vdss): 500 V Gate Charge (Qg) (Max) @ Vgs: 24 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 625 pF @ 25 V |
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FDB024N08BL7 | onsemi |
Description: MOSFET N-CH 80V 120A TO263-7 Packaging: Cut Tape (CT) Package / Case: TO-263-7, D2PAK (6 Leads + Tab) Mounting Type: Surface Mount Operating Temperature: -55°C ~ 175°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 120A (Tc) Rds On (Max) @ Id, Vgs: 2.4mOhm @ 100A, 10V Power Dissipation (Max): 246W (Tc) Vgs(th) (Max) @ Id: 4.5V @ 250µA Supplier Device Package: TO-263-7 Part Status: Active Drive Voltage (Max Rds On, Min Rds On): 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 80 V Gate Charge (Qg) (Max) @ Vgs: 178 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 13530 pF @ 40 V |
на замовлення 89995 шт: термін постачання 21-31 дні (днів) |
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FDB20N50F | onsemi |
Description: MOSFET N-CH 500V 20A D2PAK Packaging: Cut Tape (CT) Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB Mounting Type: Surface Mount Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 20A (Tc) Rds On (Max) @ Id, Vgs: 260mOhm @ 10A, 10V Power Dissipation (Max): 250W (Tc) Vgs(th) (Max) @ Id: 5V @ 250µA Supplier Device Package: TO-263 (D2Pak) Part Status: Active Drive Voltage (Max Rds On, Min Rds On): 10V Vgs (Max): ±30V Drain to Source Voltage (Vdss): 500 V Gate Charge (Qg) (Max) @ Vgs: 65 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 3390 pF @ 25 V |
на замовлення 6234 шт: термін постачання 21-31 дні (днів) |
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FDMC7692S-F126 | onsemi | Description: MOSFET N-CH 30V 12.5A/18A 8MLP |
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FQB5N60CTM-WS | onsemi |
Description: MOSFET N-CH 600V 4.5A D2PAK Packaging: Cut Tape (CT) Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB Mounting Type: Surface Mount Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 4.5A (Tc) Rds On (Max) @ Id, Vgs: 2.5Ohm @ 2.25A, 10V Power Dissipation (Max): 100W (Tc) Vgs(th) (Max) @ Id: 4V @ 250µA Supplier Device Package: TO-263 (D2Pak) Part Status: Obsolete Drive Voltage (Max Rds On, Min Rds On): 10V Vgs (Max): ±30V Drain to Source Voltage (Vdss): 600 V Gate Charge (Qg) (Max) @ Vgs: 19 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 670 pF @ 25 V |
на замовлення 760 шт: термін постачання 21-31 дні (днів) |
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FQD4P40TM-AM002 | onsemi |
Description: MOSFET P-CH 400V 2.7A DPAK Packaging: Cut Tape (CT) Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63 Mounting Type: Surface Mount Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: P-Channel Current - Continuous Drain (Id) @ 25°C: 2.7A (Tc) Rds On (Max) @ Id, Vgs: 3.1Ohm @ 1.35A, 10V Power Dissipation (Max): 2.5W (Ta), 50W (Tc) Vgs(th) (Max) @ Id: 5V @ 250µA Supplier Device Package: TO-252AA Part Status: Obsolete Drive Voltage (Max Rds On, Min Rds On): 10V Vgs (Max): ±30V Drain to Source Voltage (Vdss): 400 V Gate Charge (Qg) (Max) @ Vgs: 23 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 680 pF @ 25 V |
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FQD5N60CTM-WS | onsemi |
Description: MOSFET N-CH 600V 2.8A DPAK Packaging: Cut Tape (CT) Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63 Mounting Type: Surface Mount Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 2.8A (Tc) Rds On (Max) @ Id, Vgs: 2.5Ohm @ 1.4A, 10V Power Dissipation (Max): 2.5W (Ta), 49W (Tc) Vgs(th) (Max) @ Id: 4V @ 250µA Supplier Device Package: TO-252AA Part Status: Obsolete Drive Voltage (Max Rds On, Min Rds On): 10V Vgs (Max): ±30V Drain to Source Voltage (Vdss): 600 V Gate Charge (Qg) (Max) @ Vgs: 19 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 670 pF @ 25 V |
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MDB10SV | onsemi |
Description: BRIDGE RECT 1P 1KV 1.2A MICRODIP Packaging: Cut Tape (CT) Package / Case: 4-SMD, Gull Wing Mounting Type: Surface Mount Diode Type: Single Phase Operating Temperature: -55°C ~ 150°C (TJ) Technology: Standard Supplier Device Package: 4-MicroDIP/SMD Voltage - Peak Reverse (Max): 1 kV Current - Average Rectified (Io): 1.2 A Voltage - Forward (Vf) (Max) @ If: 1.015 V @ 1.2 A Current - Reverse Leakage @ Vr: 10 µA @ 1000 V |
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FDZ1416NZ | onsemi |
Description: MOSFET 2N-CH 4WLCSP Packaging: Cut Tape (CT) Package / Case: 4-XFBGA, WLCSP Mounting Type: Surface Mount Configuration: 2 N-Channel (Dual) Common Drain Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) Power - Max: 500mW Gate Charge (Qg) (Max) @ Vgs: 17nC @ 4.5V Vgs(th) (Max) @ Id: 1.3V @ 250µA Supplier Device Package: 4-WLCSP (1.6x1.4) Part Status: Obsolete |
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NC7SB3157P6X-F080 | onsemi |
Description: IC SWITCH SPDT X 1 15OHM SC88 Packaging: Cut Tape (CT) Package / Case: 6-TSSOP, SC-88, SOT-363 Mounting Type: Surface Mount Operating Temperature: -40°C ~ 85°C (TA) On-State Resistance (Max): 15Ohm -3db Bandwidth: 250MHz Supplier Device Package: SC-88 (SC-70-6) Voltage - Supply, Single (V+): 1.65V ~ 5.5V Charge Injection: 7pC Crosstalk: -54dB @ 10MHz Switch Circuit: SPDT Multiplexer/Demultiplexer Circuit: 2:1 Channel-to-Channel Matching (ΔRon): 150mOhm Switch Time (Ton, Toff) (Max): 5.2ns, 3.5ns Channel Capacitance (CS(off), CD(off)): 6.5pF Current - Leakage (IS(off)) (Max): 100nA Number of Circuits: 1 |
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NC7SB3157P6X-F40 | onsemi |
Description: IC SWITCH SPDT X 1 15OHM SC88 Packaging: Cut Tape (CT) Package / Case: 6-TSSOP, SC-88, SOT-363 Mounting Type: Surface Mount Operating Temperature: -40°C ~ 85°C (TA) On-State Resistance (Max): 15Ohm -3db Bandwidth: 250MHz Supplier Device Package: SC-88 (SC-70-6) Voltage - Supply, Single (V+): 1.65V ~ 5.5V Charge Injection: 7pC Crosstalk: -54dB @ 10MHz Switch Circuit: SPDT Multiplexer/Demultiplexer Circuit: 2:1 Channel-to-Channel Matching (ΔRon): 150mOhm Switch Time (Ton, Toff) (Max): 5.2ns, 3.5ns Channel Capacitance (CS(off), CD(off)): 6.5pF Current - Leakage (IS(off)) (Max): 100nA Number of Circuits: 1 |
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ESD8004MUTAG | onsemi |
Description: TVS DIODE 3.3VWM 8VC 10UDFN Packaging: Tape & Reel (TR) Package / Case: 10-UFDFN Mounting Type: Surface Mount Type: Zener Operating Temperature: -55°C ~ 125°C (TJ) Applications: USB Capacitance @ Frequency: 0.3pF @ 1MHz Current - Peak Pulse (10/1000µs): 16A Voltage - Reverse Standoff (Typ): 3.3V (Max) Supplier Device Package: 10-UDFN (2.5x1) Unidirectional Channels: 4 Voltage - Breakdown (Min): 5.5V Voltage - Clamping (Max) @ Ipp: 8V (Typ) Power Line Protection: No Part Status: Active |
на замовлення 6000 шт: термін постачання 21-31 дні (днів) |
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ESD8040MUTAG | onsemi |
Description: TVS DIODE 3.3VWM 12VC 18UDFN Packaging: Tape & Reel (TR) Package / Case: 18-UFDFN Exposed Pad Mounting Type: Surface Mount Type: Zener Operating Temperature: -55°C ~ 125°C (TJ) Applications: HDMI Capacitance @ Frequency: 0.3pF @ 1MHz Current - Peak Pulse (10/1000µs): 16A (100ns) Voltage - Reverse Standoff (Typ): 3.3V (Max) Supplier Device Package: 18-UDFN (5.5x1.5) Unidirectional Channels: 14 Voltage - Breakdown (Min): 5.5V Voltage - Clamping (Max) @ Ipp: 12V (Typ) Power Line Protection: No Part Status: Active |
на замовлення 3000 шт: термін постачання 21-31 дні (днів) |
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ESD8006MUTAG | onsemi |
Description: TVS DIODE 3.3VWM 8.4VC 8-UDFN Packaging: Tape & Reel (TR) Package / Case: 10-UFDFN Mounting Type: Surface Mount Type: Zener Operating Temperature: -55°C ~ 125°C (TJ) Applications: USB Capacitance @ Frequency: 0.32pF @ 1MHz Current - Peak Pulse (10/1000µs): 16A Voltage - Reverse Standoff (Typ): 3.3V (Max) Supplier Device Package: 8-UDFN (3.3x1.0) Unidirectional Channels: 6 Voltage - Breakdown (Min): 5.5V Voltage - Clamping (Max) @ Ipp: 8.4V (Typ) Power Line Protection: No Part Status: Active |
на замовлення 9000 шт: термін постачання 21-31 дні (днів) |
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ESD8008MUTAG | onsemi |
Description: TVS DIODE 3.3VWM 8.1VC 14UDFN Packaging: Tape & Reel (TR) Package / Case: 14-UFDFN Mounting Type: Surface Mount Type: Zener Operating Temperature: -55°C ~ 125°C (TJ) Applications: General Purpose Capacitance @ Frequency: 0.3pF @ 1MHz Current - Peak Pulse (10/1000µs): 16A Voltage - Reverse Standoff (Typ): 3.3V (Max) Supplier Device Package: 14-UDFN (5.5x1.5) Unidirectional Channels: 8 Voltage - Breakdown (Min): 5.5V Voltage - Clamping (Max) @ Ipp: 8.1V (Typ) Power Line Protection: No Part Status: Active |
на замовлення 3000 шт: термін постачання 21-31 дні (днів) |
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ESD8104MUTAG | onsemi |
Description: TVS DIODE 3.3VWM 11.4VC 10UDFN Packaging: Tape & Reel (TR) Package / Case: 10-UFDFN Mounting Type: Surface Mount Type: Zener Operating Temperature: -55°C ~ 125°C (TJ) Applications: HDMI, USB Capacitance @ Frequency: 0.3pF @ 1MHz Current - Peak Pulse (10/1000µs): 16A (100ns) Voltage - Reverse Standoff (Typ): 3.3V (Max) Supplier Device Package: 10-UDFN (2.5x1) Unidirectional Channels: 4 Voltage - Breakdown (Min): 4V Voltage - Clamping (Max) @ Ipp: 11.4V (Typ) Power Line Protection: No Part Status: Active |
на замовлення 15000 шт: термін постачання 21-31 дні (днів) |
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ESD8004MUTAG | onsemi |
Description: TVS DIODE 3.3VWM 8VC 10UDFN Packaging: Cut Tape (CT) Package / Case: 10-UFDFN Mounting Type: Surface Mount Type: Zener Operating Temperature: -55°C ~ 125°C (TJ) Applications: USB Capacitance @ Frequency: 0.3pF @ 1MHz Current - Peak Pulse (10/1000µs): 16A Voltage - Reverse Standoff (Typ): 3.3V (Max) Supplier Device Package: 10-UDFN (2.5x1) Unidirectional Channels: 4 Voltage - Breakdown (Min): 5.5V Voltage - Clamping (Max) @ Ipp: 8V (Typ) Power Line Protection: No Part Status: Active |
на замовлення 8610 шт: термін постачання 21-31 дні (днів) |
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ESD8040MUTAG | onsemi |
Description: TVS DIODE 3.3VWM 12VC 18UDFN Packaging: Cut Tape (CT) Package / Case: 18-UFDFN Exposed Pad Mounting Type: Surface Mount Type: Zener Operating Temperature: -55°C ~ 125°C (TJ) Applications: HDMI Capacitance @ Frequency: 0.3pF @ 1MHz Current - Peak Pulse (10/1000µs): 16A (100ns) Voltage - Reverse Standoff (Typ): 3.3V (Max) Supplier Device Package: 18-UDFN (5.5x1.5) Unidirectional Channels: 14 Voltage - Breakdown (Min): 5.5V Voltage - Clamping (Max) @ Ipp: 12V (Typ) Power Line Protection: No Part Status: Active |
на замовлення 5202 шт: термін постачання 21-31 дні (днів) |
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ESD8006MUTAG | onsemi |
Description: TVS DIODE 3.3VWM 8.4VC 8-UDFN Packaging: Cut Tape (CT) Package / Case: 10-UFDFN Mounting Type: Surface Mount Type: Zener Operating Temperature: -55°C ~ 125°C (TJ) Applications: USB Capacitance @ Frequency: 0.32pF @ 1MHz Current - Peak Pulse (10/1000µs): 16A Voltage - Reverse Standoff (Typ): 3.3V (Max) Supplier Device Package: 8-UDFN (3.3x1.0) Unidirectional Channels: 6 Voltage - Breakdown (Min): 5.5V Voltage - Clamping (Max) @ Ipp: 8.4V (Typ) Power Line Protection: No Part Status: Active |
на замовлення 10574 шт: термін постачання 21-31 дні (днів) |
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ESD8008MUTAG | onsemi |
Description: TVS DIODE 3.3VWM 8.1VC 14UDFN Packaging: Cut Tape (CT) Package / Case: 14-UFDFN Mounting Type: Surface Mount Type: Zener Operating Temperature: -55°C ~ 125°C (TJ) Applications: General Purpose Capacitance @ Frequency: 0.3pF @ 1MHz Current - Peak Pulse (10/1000µs): 16A Voltage - Reverse Standoff (Typ): 3.3V (Max) Supplier Device Package: 14-UDFN (5.5x1.5) Unidirectional Channels: 8 Voltage - Breakdown (Min): 5.5V Voltage - Clamping (Max) @ Ipp: 8.1V (Typ) Power Line Protection: No Part Status: Active |
на замовлення 4399 шт: термін постачання 21-31 дні (днів) |
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ESD8104MUTAG | onsemi |
Description: TVS DIODE 3.3VWM 11.4VC 10UDFN Packaging: Cut Tape (CT) Package / Case: 10-UFDFN Mounting Type: Surface Mount Type: Zener Operating Temperature: -55°C ~ 125°C (TJ) Applications: HDMI, USB Capacitance @ Frequency: 0.3pF @ 1MHz Current - Peak Pulse (10/1000µs): 16A (100ns) Voltage - Reverse Standoff (Typ): 3.3V (Max) Supplier Device Package: 10-UDFN (2.5x1) Unidirectional Channels: 4 Voltage - Breakdown (Min): 4V Voltage - Clamping (Max) @ Ipp: 11.4V (Typ) Power Line Protection: No Part Status: Active |
на замовлення 20622 шт: термін постачання 21-31 дні (днів) |
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MG2040MUTAG | onsemi |
Description: TVS DIODE 5VWM 10VC 18UDFN Packaging: Cut Tape (CT) Package / Case: 18-UFDFN Exposed Pad Mounting Type: Surface Mount Type: Zener Operating Temperature: -55°C ~ 125°C (TJ) Applications: HDMI Capacitance @ Frequency: 0.35pF @ 1MHz Current - Peak Pulse (10/1000µs): 1A (8/20µs) Voltage - Reverse Standoff (Typ): 5V (Max) Supplier Device Package: 18-UDFN (5.5x1.5) Unidirectional Channels: 14 Voltage - Breakdown (Min): 5.5V Voltage - Clamping (Max) @ Ipp: 10V Power Line Protection: No Part Status: Active |
на замовлення 41350 шт: термін постачання 21-31 дні (днів) |
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NIS5132MN2TXG | onsemi |
Description: IC ELECTRONIC FUSE 10DFN Packaging: Cut Tape (CT) Package / Case: 10-VFDFN Exposed Pad Sensing Method: High-Side Mounting Type: Surface Mount Function: Electronic Fuse Voltage - Input: 9V ~ 18V Current - Output: 3.6A Operating Temperature: -40°C ~ 150°C Supplier Device Package: 10-DFN (3x3) Part Status: Not For New Designs |
на замовлення 4973 шт: термін постачання 21-31 дні (днів) |
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NIS5135MN2TXG | onsemi |
Description: IC ELECTRONIC FUSE 10DFN Packaging: Cut Tape (CT) Package / Case: 10-VFDFN Exposed Pad Sensing Method: High-Side Mounting Type: Surface Mount Function: Electronic Fuse Voltage - Input: 3.1V ~ 18V Current - Output: 3.6A Operating Temperature: -40°C ~ 150°C Supplier Device Package: 10-DFN (3x3) |
на замовлення 7081 шт: термін постачання 21-31 дні (днів) |
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NSBC124EF3T5G | onsemi |
Description: TRANS PREBIAS NPN 50V SOT1123 Packaging: Cut Tape (CT) Package / Case: SOT-1123 Mounting Type: Surface Mount Transistor Type: NPN - Pre-Biased Vce Saturation (Max) @ Ib, Ic: 250mV @ 300µA, 10mA Current - Collector Cutoff (Max): 500nA DC Current Gain (hFE) (Min) @ Ic, Vce: 60 @ 5mA, 10V Supplier Device Package: SOT-1123 Current - Collector (Ic) (Max): 100 mA Voltage - Collector Emitter Breakdown (Max): 50 V Power - Max: 254 mW Resistor - Base (R1): 22 kOhms Resistor - Emitter Base (R2): 22 kOhms |
на замовлення 44316 шт: термін постачання 21-31 дні (днів) |
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FEBFHR1200-SPG01A-GEVB | onsemi |
Description: EVAL BOARD SHUNT REGULATOR Packaging: Bulk Type: Power Management Utilized IC / Part: FHR1200 Supplied Contents: Board(s) |
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2N7002WST1G | onsemi |
Description: MOSFET N-CH 60V 0.115A SC70 Packaging: Tape & Reel (TR) Package / Case: SC-70, SOT-323 Mounting Type: Surface Mount Operating Temperature: -55°C ~ 150°C (TJ) Current - Continuous Drain (Id) @ 25°C: 310mA (Ta) Supplier Device Package: SC-70-3 (SOT323) Part Status: Obsolete Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Vgs (Max): ±20V |
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2SA1418T-TD-E | onsemi |
Description: TRANS PNP 160V 0.7A PCP Packaging: Tape & Reel (TR) Package / Case: TO-243AA Mounting Type: Surface Mount Supplier Device Package: PCP Part Status: Obsolete |
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2SA2125-S-TD-E | onsemi |
Description: TRANS PNP 50V 3A PCP Packaging: Tape & Reel (TR) Package / Case: TO-243AA Mounting Type: Surface Mount Transistor Type: PNP Vce Saturation (Max) @ Ib, Ic: 500mV @ 100mA, 2A Current - Collector Cutoff (Max): 1µA (ICBO) DC Current Gain (hFE) (Min) @ Ic, Vce: 200 @ 100mA, 2V Frequency - Transition: 390MHz Supplier Device Package: PCP Part Status: Obsolete Current - Collector (Ic) (Max): 3 A Voltage - Collector Emitter Breakdown (Max): 50 V Power - Max: 3.5 W |
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2SA2125-S-TD-H | onsemi |
Description: TRANS PNP 50V 3A PCP Packaging: Tape & Reel (TR) Package / Case: TO-243AA Mounting Type: Surface Mount Transistor Type: PNP Vce Saturation (Max) @ Ib, Ic: 500mV @ 100mA, 2A Current - Collector Cutoff (Max): 1µA (ICBO) DC Current Gain (hFE) (Min) @ Ic, Vce: 200 @ 100mA, 2V Frequency - Transition: 390MHz Supplier Device Package: PCP Part Status: Obsolete Current - Collector (Ic) (Max): 3 A Voltage - Collector Emitter Breakdown (Max): 50 V Power - Max: 3.5 W |
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2SA2126-S-TL-E | onsemi |
Description: TRANS PNP 50V 3A TPFA Packaging: Tape & Reel (TR) Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63 Mounting Type: Surface Mount Transistor Type: PNP Operating Temperature: 150°C (TJ) Vce Saturation (Max) @ Ib, Ic: 520mV @ 100mA, 2A Current - Collector Cutoff (Max): 1µA (ICBO) DC Current Gain (hFE) (Min) @ Ic, Vce: 200 @ 100mA, 2V Frequency - Transition: 390MHz Supplier Device Package: TP-FA Part Status: Obsolete Current - Collector (Ic) (Max): 3 A Voltage - Collector Emitter Breakdown (Max): 50 V Power - Max: 800 mW |
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2SA2210-1E | onsemi |
Description: TRANS PNP 50V 20A TO220F-3SG Packaging: Tube Package / Case: TO-220-3 Full Pack Mounting Type: Through Hole Transistor Type: PNP Operating Temperature: 150°C (TJ) Vce Saturation (Max) @ Ib, Ic: 500mV @ 350mA, 7A Current - Collector Cutoff (Max): 10µA (ICBO) DC Current Gain (hFE) (Min) @ Ic, Vce: 150 @ 1A, 2V Frequency - Transition: 140MHz Supplier Device Package: TO-220F-3SG Part Status: Active Current - Collector (Ic) (Max): 20 A Voltage - Collector Emitter Breakdown (Max): 50 V Power - Max: 2 W |
на замовлення 297 шт: термін постачання 21-31 дні (днів) |
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2SA2210-EPN-1EX | onsemi |
Description: TRANS PNP 50V 20A TO220F-3SG Packaging: Tube Package / Case: TO-220-3 Full Pack Mounting Type: Through Hole Transistor Type: PNP Vce Saturation (Max) @ Ib, Ic: 500mV @ 350mA, 7A Current - Collector Cutoff (Max): 10µA (ICBO) DC Current Gain (hFE) (Min) @ Ic, Vce: 150 @ 1A, 2V Frequency - Transition: 140MHz Supplier Device Package: TO-220F-3SG Part Status: Obsolete Current - Collector (Ic) (Max): 20 A Voltage - Collector Emitter Breakdown (Max): 50 V Power - Max: 2 W |
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2SB1203S-H-TL-E | onsemi |
Description: TRANS PNP 50V 5A TPFA Packaging: Tape & Reel (TR) Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63 Mounting Type: Surface Mount Transistor Type: PNP Operating Temperature: 150°C (TJ) Vce Saturation (Max) @ Ib, Ic: 550mV @ 150mA, 3A Current - Collector Cutoff (Max): 1µA (ICBO) DC Current Gain (hFE) (Min) @ Ic, Vce: 140 @ 500mA, 2V Frequency - Transition: 130MHz Supplier Device Package: TP-FA Part Status: Obsolete Current - Collector (Ic) (Max): 5 A Voltage - Collector Emitter Breakdown (Max): 50 V Power - Max: 1 W |
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2SB1203T-H-TL-E | onsemi |
Description: TRANS PNP 50V 5A TPFA Packaging: Tape & Reel (TR) Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63 Mounting Type: Surface Mount Transistor Type: PNP Operating Temperature: 150°C (TJ) Vce Saturation (Max) @ Ib, Ic: 550mV @ 150mA, 3A Current - Collector Cutoff (Max): 1µA (ICBO) DC Current Gain (hFE) (Min) @ Ic, Vce: 200 @ 500mA, 2V Frequency - Transition: 130MHz Supplier Device Package: TP-FA Part Status: Obsolete Current - Collector (Ic) (Max): 5 A Voltage - Collector Emitter Breakdown (Max): 50 V Power - Max: 1 W |
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2SB817C-1E | onsemi |
Description: TRANS PNP 140V 12A TO3P-3L Packaging: Tube Package / Case: TO-3P-3, SC-65-3 Mounting Type: Through Hole Transistor Type: PNP Operating Temperature: 150°C (TJ) Vce Saturation (Max) @ Ib, Ic: 2V @ 500mA, 5A Current - Collector Cutoff (Max): 100µA (ICBO) DC Current Gain (hFE) (Min) @ Ic, Vce: 100 @ 1A, 5V Frequency - Transition: 10MHz Supplier Device Package: TO-3P-3L Part Status: Obsolete Current - Collector (Ic) (Max): 12 A Voltage - Collector Emitter Breakdown (Max): 140 V Power - Max: 120 W |
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2SC3332R | onsemi |
Description: TRANS NPN 160V 0.7A 3NP Packaging: Bag Package / Case: TO-226-3, TO-92-3 (TO-226AA) Mounting Type: Through Hole Supplier Device Package: 3-NP Part Status: Obsolete |
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2SC3332R-AA | onsemi |
Description: TRANS NPN 160V 0.7A 3NP Packaging: Tape & Reel (TR) Package / Case: TO-226-3, TO-92-3 (TO-226AA) Formed Leads Mounting Type: Through Hole Supplier Device Package: 3-NP Part Status: Obsolete |
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2SC3646S-P-TD-E | onsemi |
Description: TRANS NPN 100V 1A Packaging: Tape & Reel (TR) Package / Case: TO-243AA Mounting Type: Surface Mount Transistor Type: NPN Vce Saturation (Max) @ Ib, Ic: 400mV @ 40mA, 400mA Current - Collector Cutoff (Max): 100nA (ICBO) DC Current Gain (hFE) (Min) @ Ic, Vce: 140 @ 100mA, 5V Frequency - Transition: 120MHz Supplier Device Package: PCP Current - Collector (Ic) (Max): 1 A Voltage - Collector Emitter Breakdown (Max): 100 V Power - Max: 500 mW |
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2SC3646T-P-TD-E | onsemi | Description: TRANS NPN 100V 1A |
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2SC4486S-AN | onsemi |
Description: TRANS NPN 50V 2A 3NMP Packaging: Tape & Reel (TR) Package / Case: SC-71 Mounting Type: Through Hole Supplier Device Package: 3-NMP Part Status: Obsolete |
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2SC4486T-AN | onsemi |
Description: TRANS NPN 50V 2A 3NMP Packaging: Tape & Reel (TR) Package / Case: SC-71 Mounting Type: Through Hole Supplier Device Package: 3-NMP Part Status: Obsolete |
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2SC5414AE | onsemi |
Description: TRANS NPN 12V 0.1A 3NP Packaging: Tape & Reel (TR) Package / Case: TO-226-3, TO-92-3 (TO-226AA) Mounting Type: Through Hole Supplier Device Package: 3-NP Part Status: Obsolete |
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2SC5414AE-AA | onsemi |
Description: TRANS NPN 12V 0.1A 3NP Packaging: Tape & Reel (TR) Package / Case: TO-226-3, TO-92-3 (TO-226AA) Mounting Type: Through Hole Supplier Device Package: 3-NP Part Status: Obsolete |
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2SC5414AF | onsemi |
Description: TRANS NPN 12V 0.1A 3NP Packaging: Bag Package / Case: TO-226-3, TO-92-3 (TO-226AA) Mounting Type: Through Hole Supplier Device Package: 3-NP Part Status: Obsolete |
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2SC5414AF-AA | onsemi |
Description: TRANS NPN 12V 0.1A 3NP Packaging: Tape & Reel (TR) Package / Case: TO-226-3, TO-92-3 (TO-226AA) Mounting Type: Through Hole Supplier Device Package: 3-NP Part Status: Obsolete |
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2SC5415AF-TD-E | onsemi |
Description: RF TRANS NPN 12V 6.7GHZ PCP Packaging: Tape & Reel (TR) Package / Case: TO-243AA Mounting Type: Surface Mount Transistor Type: NPN Operating Temperature: 150°C (TJ) Gain: 9dB Power - Max: 800mW Current - Collector (Ic) (Max): 100mA Voltage - Collector Emitter Breakdown (Max): 12V DC Current Gain (hFE) (Min) @ Ic, Vce: 90 @ 30mA, 5V Frequency - Transition: 6.7GHz Noise Figure (dB Typ @ f): 1.1dB @ 1GHz Supplier Device Package: PCP Part Status: Obsolete |
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2SC5488-TL-E | onsemi |
Description: TRANS NPN 10V 0.07A 3SSFP Packaging: Tape & Reel (TR) Package / Case: SOT-623F Mounting Type: Surface Mount Supplier Device Package: 3-SSFP Part Status: Obsolete |
товар відсутній |
FDMC8884-F126 |
Виробник: onsemi
Description: MOSFET N-CH 30V 9A/15A 8MLP
Packaging: Tape & Reel (TR)
Package / Case: 8-PowerWDFN
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 9A (Ta), 15A (Tc)
Rds On (Max) @ Id, Vgs: 19mOhm @ 9A, 10V
Power Dissipation (Max): 2.3W (Ta), 18W (Tc)
Vgs(th) (Max) @ Id: 2.5V @ 250µA
Supplier Device Package: 8-MLP (3.3x3.3)
Part Status: Obsolete
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 30 V
Gate Charge (Qg) (Max) @ Vgs: 14 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 685 pF @ 15 V
Description: MOSFET N-CH 30V 9A/15A 8MLP
Packaging: Tape & Reel (TR)
Package / Case: 8-PowerWDFN
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 9A (Ta), 15A (Tc)
Rds On (Max) @ Id, Vgs: 19mOhm @ 9A, 10V
Power Dissipation (Max): 2.3W (Ta), 18W (Tc)
Vgs(th) (Max) @ Id: 2.5V @ 250µA
Supplier Device Package: 8-MLP (3.3x3.3)
Part Status: Obsolete
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 30 V
Gate Charge (Qg) (Max) @ Vgs: 14 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 685 pF @ 15 V
товар відсутній
FQB5N60CTM-WS |
Виробник: onsemi
Description: MOSFET N-CH 600V 4.5A D2PAK
Packaging: Tape & Reel (TR)
Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
Mounting Type: Surface Mount
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 4.5A (Tc)
Rds On (Max) @ Id, Vgs: 2.5Ohm @ 2.25A, 10V
Power Dissipation (Max): 100W (Tc)
Vgs(th) (Max) @ Id: 4V @ 250µA
Supplier Device Package: TO-263 (D2Pak)
Part Status: Obsolete
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±30V
Drain to Source Voltage (Vdss): 600 V
Gate Charge (Qg) (Max) @ Vgs: 19 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 670 pF @ 25 V
Description: MOSFET N-CH 600V 4.5A D2PAK
Packaging: Tape & Reel (TR)
Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
Mounting Type: Surface Mount
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 4.5A (Tc)
Rds On (Max) @ Id, Vgs: 2.5Ohm @ 2.25A, 10V
Power Dissipation (Max): 100W (Tc)
Vgs(th) (Max) @ Id: 4V @ 250µA
Supplier Device Package: TO-263 (D2Pak)
Part Status: Obsolete
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±30V
Drain to Source Voltage (Vdss): 600 V
Gate Charge (Qg) (Max) @ Vgs: 19 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 670 pF @ 25 V
товар відсутній
FQB8N60CTM-WS |
Виробник: onsemi
Description: MOSFET N-CH 600V 7.5A D2PAK
Packaging: Tape & Reel (TR)
Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 7.5A (Tc)
Rds On (Max) @ Id, Vgs: 1.2Ohm @ 3.75A, 10V
Power Dissipation (Max): 3.13W (Ta), 147W (Tc)
Vgs(th) (Max) @ Id: 4V @ 250µA
Supplier Device Package: TO-263 (D2Pak)
Part Status: Obsolete
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±30V
Drain to Source Voltage (Vdss): 600 V
Gate Charge (Qg) (Max) @ Vgs: 36 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 1255 pF @ 25 V
Description: MOSFET N-CH 600V 7.5A D2PAK
Packaging: Tape & Reel (TR)
Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 7.5A (Tc)
Rds On (Max) @ Id, Vgs: 1.2Ohm @ 3.75A, 10V
Power Dissipation (Max): 3.13W (Ta), 147W (Tc)
Vgs(th) (Max) @ Id: 4V @ 250µA
Supplier Device Package: TO-263 (D2Pak)
Part Status: Obsolete
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±30V
Drain to Source Voltage (Vdss): 600 V
Gate Charge (Qg) (Max) @ Vgs: 36 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 1255 pF @ 25 V
товар відсутній
FQD2N60CTM-WS |
Виробник: onsemi
Description: MOSFET N-CH 600V 1.9A DPAK
Packaging: Tape & Reel (TR)
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 1.9A (Tc)
Rds On (Max) @ Id, Vgs: 4.7Ohm @ 950mA, 10V
Power Dissipation (Max): 2.5W (Ta), 44W (Tc)
Vgs(th) (Max) @ Id: 4V @ 250µA
Supplier Device Package: TO-252AA
Part Status: Obsolete
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±30V
Drain to Source Voltage (Vdss): 600 V
Gate Charge (Qg) (Max) @ Vgs: 12 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 235 pF @ 25 V
Description: MOSFET N-CH 600V 1.9A DPAK
Packaging: Tape & Reel (TR)
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 1.9A (Tc)
Rds On (Max) @ Id, Vgs: 4.7Ohm @ 950mA, 10V
Power Dissipation (Max): 2.5W (Ta), 44W (Tc)
Vgs(th) (Max) @ Id: 4V @ 250µA
Supplier Device Package: TO-252AA
Part Status: Obsolete
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±30V
Drain to Source Voltage (Vdss): 600 V
Gate Charge (Qg) (Max) @ Vgs: 12 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 235 pF @ 25 V
товар відсутній
FQD4P40TM-AM002 |
Виробник: onsemi
Description: MOSFET P-CH 400V 2.7A DPAK
Packaging: Tape & Reel (TR)
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: P-Channel
Current - Continuous Drain (Id) @ 25°C: 2.7A (Tc)
Rds On (Max) @ Id, Vgs: 3.1Ohm @ 1.35A, 10V
Power Dissipation (Max): 2.5W (Ta), 50W (Tc)
Vgs(th) (Max) @ Id: 5V @ 250µA
Supplier Device Package: TO-252AA
Part Status: Obsolete
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±30V
Drain to Source Voltage (Vdss): 400 V
Gate Charge (Qg) (Max) @ Vgs: 23 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 680 pF @ 25 V
Description: MOSFET P-CH 400V 2.7A DPAK
Packaging: Tape & Reel (TR)
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: P-Channel
Current - Continuous Drain (Id) @ 25°C: 2.7A (Tc)
Rds On (Max) @ Id, Vgs: 3.1Ohm @ 1.35A, 10V
Power Dissipation (Max): 2.5W (Ta), 50W (Tc)
Vgs(th) (Max) @ Id: 5V @ 250µA
Supplier Device Package: TO-252AA
Part Status: Obsolete
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±30V
Drain to Source Voltage (Vdss): 400 V
Gate Charge (Qg) (Max) @ Vgs: 23 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 680 pF @ 25 V
товар відсутній
FQD5N60CTM-WS |
Виробник: onsemi
Description: MOSFET N-CH 600V 2.8A DPAK
Packaging: Tape & Reel (TR)
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 2.8A (Tc)
Rds On (Max) @ Id, Vgs: 2.5Ohm @ 1.4A, 10V
Power Dissipation (Max): 2.5W (Ta), 49W (Tc)
Vgs(th) (Max) @ Id: 4V @ 250µA
Supplier Device Package: TO-252AA
Part Status: Obsolete
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±30V
Drain to Source Voltage (Vdss): 600 V
Gate Charge (Qg) (Max) @ Vgs: 19 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 670 pF @ 25 V
Description: MOSFET N-CH 600V 2.8A DPAK
Packaging: Tape & Reel (TR)
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 2.8A (Tc)
Rds On (Max) @ Id, Vgs: 2.5Ohm @ 1.4A, 10V
Power Dissipation (Max): 2.5W (Ta), 49W (Tc)
Vgs(th) (Max) @ Id: 4V @ 250µA
Supplier Device Package: TO-252AA
Part Status: Obsolete
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±30V
Drain to Source Voltage (Vdss): 600 V
Gate Charge (Qg) (Max) @ Vgs: 19 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 670 pF @ 25 V
товар відсутній
MDB10SV |
Виробник: onsemi
Description: BRIDGE RECT 1P 1KV 1.2A MICRODIP
Packaging: Tape & Reel (TR)
Package / Case: 4-SMD, Gull Wing
Mounting Type: Surface Mount
Diode Type: Single Phase
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: Standard
Supplier Device Package: 4-MicroDIP/SMD
Voltage - Peak Reverse (Max): 1 kV
Current - Average Rectified (Io): 1.2 A
Voltage - Forward (Vf) (Max) @ If: 1.015 V @ 1.2 A
Current - Reverse Leakage @ Vr: 10 µA @ 1000 V
Description: BRIDGE RECT 1P 1KV 1.2A MICRODIP
Packaging: Tape & Reel (TR)
Package / Case: 4-SMD, Gull Wing
Mounting Type: Surface Mount
Diode Type: Single Phase
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: Standard
Supplier Device Package: 4-MicroDIP/SMD
Voltage - Peak Reverse (Max): 1 kV
Current - Average Rectified (Io): 1.2 A
Voltage - Forward (Vf) (Max) @ If: 1.015 V @ 1.2 A
Current - Reverse Leakage @ Vr: 10 µA @ 1000 V
товар відсутній
FDZ1416NZ |
Виробник: onsemi
Description: MOSFET 2N-CH 4WLCSP
Packaging: Tape & Reel (TR)
Package / Case: 4-XFBGA, WLCSP
Mounting Type: Surface Mount
Configuration: 2 N-Channel (Dual) Common Drain
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
Power - Max: 500mW
Gate Charge (Qg) (Max) @ Vgs: 17nC @ 4.5V
Vgs(th) (Max) @ Id: 1.3V @ 250µA
Supplier Device Package: 4-WLCSP (1.6x1.4)
Part Status: Obsolete
Description: MOSFET 2N-CH 4WLCSP
Packaging: Tape & Reel (TR)
Package / Case: 4-XFBGA, WLCSP
Mounting Type: Surface Mount
Configuration: 2 N-Channel (Dual) Common Drain
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
Power - Max: 500mW
Gate Charge (Qg) (Max) @ Vgs: 17nC @ 4.5V
Vgs(th) (Max) @ Id: 1.3V @ 250µA
Supplier Device Package: 4-WLCSP (1.6x1.4)
Part Status: Obsolete
товар відсутній
NC7SB3157P6X-F080 |
Виробник: onsemi
Description: IC SWITCH SPDT X 1 15OHM SC88
Packaging: Tape & Reel (TR)
Package / Case: 6-TSSOP, SC-88, SOT-363
Mounting Type: Surface Mount
Operating Temperature: -40°C ~ 85°C (TA)
On-State Resistance (Max): 15Ohm
-3db Bandwidth: 250MHz
Supplier Device Package: SC-88 (SC-70-6)
Voltage - Supply, Single (V+): 1.65V ~ 5.5V
Charge Injection: 7pC
Crosstalk: -54dB @ 10MHz
Switch Circuit: SPDT
Multiplexer/Demultiplexer Circuit: 2:1
Channel-to-Channel Matching (ΔRon): 150mOhm
Switch Time (Ton, Toff) (Max): 5.2ns, 3.5ns
Channel Capacitance (CS(off), CD(off)): 6.5pF
Current - Leakage (IS(off)) (Max): 100nA
Number of Circuits: 1
Description: IC SWITCH SPDT X 1 15OHM SC88
Packaging: Tape & Reel (TR)
Package / Case: 6-TSSOP, SC-88, SOT-363
Mounting Type: Surface Mount
Operating Temperature: -40°C ~ 85°C (TA)
On-State Resistance (Max): 15Ohm
-3db Bandwidth: 250MHz
Supplier Device Package: SC-88 (SC-70-6)
Voltage - Supply, Single (V+): 1.65V ~ 5.5V
Charge Injection: 7pC
Crosstalk: -54dB @ 10MHz
Switch Circuit: SPDT
Multiplexer/Demultiplexer Circuit: 2:1
Channel-to-Channel Matching (ΔRon): 150mOhm
Switch Time (Ton, Toff) (Max): 5.2ns, 3.5ns
Channel Capacitance (CS(off), CD(off)): 6.5pF
Current - Leakage (IS(off)) (Max): 100nA
Number of Circuits: 1
товар відсутній
NC7SB3157P6X-F40 |
Виробник: onsemi
Description: IC SWITCH SPDT X 1 15OHM SC88
Packaging: Tape & Reel (TR)
Package / Case: 6-TSSOP, SC-88, SOT-363
Mounting Type: Surface Mount
Operating Temperature: -40°C ~ 85°C (TA)
On-State Resistance (Max): 15Ohm
-3db Bandwidth: 250MHz
Supplier Device Package: SC-88 (SC-70-6)
Voltage - Supply, Single (V+): 1.65V ~ 5.5V
Charge Injection: 7pC
Crosstalk: -54dB @ 10MHz
Switch Circuit: SPDT
Multiplexer/Demultiplexer Circuit: 2:1
Channel-to-Channel Matching (ΔRon): 150mOhm
Switch Time (Ton, Toff) (Max): 5.2ns, 3.5ns
Channel Capacitance (CS(off), CD(off)): 6.5pF
Current - Leakage (IS(off)) (Max): 100nA
Number of Circuits: 1
Description: IC SWITCH SPDT X 1 15OHM SC88
Packaging: Tape & Reel (TR)
Package / Case: 6-TSSOP, SC-88, SOT-363
Mounting Type: Surface Mount
Operating Temperature: -40°C ~ 85°C (TA)
On-State Resistance (Max): 15Ohm
-3db Bandwidth: 250MHz
Supplier Device Package: SC-88 (SC-70-6)
Voltage - Supply, Single (V+): 1.65V ~ 5.5V
Charge Injection: 7pC
Crosstalk: -54dB @ 10MHz
Switch Circuit: SPDT
Multiplexer/Demultiplexer Circuit: 2:1
Channel-to-Channel Matching (ΔRon): 150mOhm
Switch Time (Ton, Toff) (Max): 5.2ns, 3.5ns
Channel Capacitance (CS(off), CD(off)): 6.5pF
Current - Leakage (IS(off)) (Max): 100nA
Number of Circuits: 1
товар відсутній
FQA16N50-F109 |
Виробник: onsemi
Description: MOSFET N-CH 500V 16A TO3P
Packaging: Tube
Package / Case: TO-3P-3, SC-65-3
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 16A (Tc)
Rds On (Max) @ Id, Vgs: 320mOhm @ 8A, 10V
Power Dissipation (Max): 200W (Tc)
Vgs(th) (Max) @ Id: 5V @ 250µA
Supplier Device Package: TO-3P
Part Status: Obsolete
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±30V
Drain to Source Voltage (Vdss): 500 V
Gate Charge (Qg) (Max) @ Vgs: 75 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 3000 pF @ 25 V
Description: MOSFET N-CH 500V 16A TO3P
Packaging: Tube
Package / Case: TO-3P-3, SC-65-3
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 16A (Tc)
Rds On (Max) @ Id, Vgs: 320mOhm @ 8A, 10V
Power Dissipation (Max): 200W (Tc)
Vgs(th) (Max) @ Id: 5V @ 250µA
Supplier Device Package: TO-3P
Part Status: Obsolete
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±30V
Drain to Source Voltage (Vdss): 500 V
Gate Charge (Qg) (Max) @ Vgs: 75 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 3000 pF @ 25 V
товар відсутній
FQU5N50CTU-WS |
Виробник: onsemi
Description: MOSFET N-CH 500V 4A IPAK
Packaging: Tube
Package / Case: TO-251-3 Short Leads, IPak, TO-251AA
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 4A (Tc)
Rds On (Max) @ Id, Vgs: 1.4Ohm @ 2A, 10V
Power Dissipation (Max): 2.5W (Ta), 48W (Tc)
Vgs(th) (Max) @ Id: 4V @ 250µA
Supplier Device Package: IPAK
Part Status: Obsolete
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±30V
Drain to Source Voltage (Vdss): 500 V
Gate Charge (Qg) (Max) @ Vgs: 24 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 625 pF @ 25 V
Description: MOSFET N-CH 500V 4A IPAK
Packaging: Tube
Package / Case: TO-251-3 Short Leads, IPak, TO-251AA
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 4A (Tc)
Rds On (Max) @ Id, Vgs: 1.4Ohm @ 2A, 10V
Power Dissipation (Max): 2.5W (Ta), 48W (Tc)
Vgs(th) (Max) @ Id: 4V @ 250µA
Supplier Device Package: IPAK
Part Status: Obsolete
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±30V
Drain to Source Voltage (Vdss): 500 V
Gate Charge (Qg) (Max) @ Vgs: 24 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 625 pF @ 25 V
товар відсутній
FDB024N08BL7 |
Виробник: onsemi
Description: MOSFET N-CH 80V 120A TO263-7
Packaging: Cut Tape (CT)
Package / Case: TO-263-7, D2PAK (6 Leads + Tab)
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 120A (Tc)
Rds On (Max) @ Id, Vgs: 2.4mOhm @ 100A, 10V
Power Dissipation (Max): 246W (Tc)
Vgs(th) (Max) @ Id: 4.5V @ 250µA
Supplier Device Package: TO-263-7
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 80 V
Gate Charge (Qg) (Max) @ Vgs: 178 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 13530 pF @ 40 V
Description: MOSFET N-CH 80V 120A TO263-7
Packaging: Cut Tape (CT)
Package / Case: TO-263-7, D2PAK (6 Leads + Tab)
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 120A (Tc)
Rds On (Max) @ Id, Vgs: 2.4mOhm @ 100A, 10V
Power Dissipation (Max): 246W (Tc)
Vgs(th) (Max) @ Id: 4.5V @ 250µA
Supplier Device Package: TO-263-7
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 80 V
Gate Charge (Qg) (Max) @ Vgs: 178 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 13530 pF @ 40 V
на замовлення 89995 шт:
термін постачання 21-31 дні (днів)Кількість | Ціна без ПДВ |
---|---|
1+ | 304.71 грн |
10+ | 246.26 грн |
100+ | 199.18 грн |
FDB20N50F |
Виробник: onsemi
Description: MOSFET N-CH 500V 20A D2PAK
Packaging: Cut Tape (CT)
Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 20A (Tc)
Rds On (Max) @ Id, Vgs: 260mOhm @ 10A, 10V
Power Dissipation (Max): 250W (Tc)
Vgs(th) (Max) @ Id: 5V @ 250µA
Supplier Device Package: TO-263 (D2Pak)
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±30V
Drain to Source Voltage (Vdss): 500 V
Gate Charge (Qg) (Max) @ Vgs: 65 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 3390 pF @ 25 V
Description: MOSFET N-CH 500V 20A D2PAK
Packaging: Cut Tape (CT)
Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 20A (Tc)
Rds On (Max) @ Id, Vgs: 260mOhm @ 10A, 10V
Power Dissipation (Max): 250W (Tc)
Vgs(th) (Max) @ Id: 5V @ 250µA
Supplier Device Package: TO-263 (D2Pak)
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±30V
Drain to Source Voltage (Vdss): 500 V
Gate Charge (Qg) (Max) @ Vgs: 65 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 3390 pF @ 25 V
на замовлення 6234 шт:
термін постачання 21-31 дні (днів)Кількість | Ціна без ПДВ |
---|---|
2+ | 220.43 грн |
10+ | 178.14 грн |
100+ | 144.11 грн |
FQB5N60CTM-WS |
Виробник: onsemi
Description: MOSFET N-CH 600V 4.5A D2PAK
Packaging: Cut Tape (CT)
Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
Mounting Type: Surface Mount
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 4.5A (Tc)
Rds On (Max) @ Id, Vgs: 2.5Ohm @ 2.25A, 10V
Power Dissipation (Max): 100W (Tc)
Vgs(th) (Max) @ Id: 4V @ 250µA
Supplier Device Package: TO-263 (D2Pak)
Part Status: Obsolete
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±30V
Drain to Source Voltage (Vdss): 600 V
Gate Charge (Qg) (Max) @ Vgs: 19 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 670 pF @ 25 V
Description: MOSFET N-CH 600V 4.5A D2PAK
Packaging: Cut Tape (CT)
Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
Mounting Type: Surface Mount
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 4.5A (Tc)
Rds On (Max) @ Id, Vgs: 2.5Ohm @ 2.25A, 10V
Power Dissipation (Max): 100W (Tc)
Vgs(th) (Max) @ Id: 4V @ 250µA
Supplier Device Package: TO-263 (D2Pak)
Part Status: Obsolete
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±30V
Drain to Source Voltage (Vdss): 600 V
Gate Charge (Qg) (Max) @ Vgs: 19 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 670 pF @ 25 V
на замовлення 760 шт:
термін постачання 21-31 дні (днів)Кількість | Ціна без ПДВ |
---|---|
3+ | 100.13 грн |
10+ | 80.12 грн |
100+ | 63.76 грн |
FQD4P40TM-AM002 |
Виробник: onsemi
Description: MOSFET P-CH 400V 2.7A DPAK
Packaging: Cut Tape (CT)
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: P-Channel
Current - Continuous Drain (Id) @ 25°C: 2.7A (Tc)
Rds On (Max) @ Id, Vgs: 3.1Ohm @ 1.35A, 10V
Power Dissipation (Max): 2.5W (Ta), 50W (Tc)
Vgs(th) (Max) @ Id: 5V @ 250µA
Supplier Device Package: TO-252AA
Part Status: Obsolete
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±30V
Drain to Source Voltage (Vdss): 400 V
Gate Charge (Qg) (Max) @ Vgs: 23 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 680 pF @ 25 V
Description: MOSFET P-CH 400V 2.7A DPAK
Packaging: Cut Tape (CT)
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: P-Channel
Current - Continuous Drain (Id) @ 25°C: 2.7A (Tc)
Rds On (Max) @ Id, Vgs: 3.1Ohm @ 1.35A, 10V
Power Dissipation (Max): 2.5W (Ta), 50W (Tc)
Vgs(th) (Max) @ Id: 5V @ 250µA
Supplier Device Package: TO-252AA
Part Status: Obsolete
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±30V
Drain to Source Voltage (Vdss): 400 V
Gate Charge (Qg) (Max) @ Vgs: 23 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 680 pF @ 25 V
товар відсутній
FQD5N60CTM-WS |
Виробник: onsemi
Description: MOSFET N-CH 600V 2.8A DPAK
Packaging: Cut Tape (CT)
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 2.8A (Tc)
Rds On (Max) @ Id, Vgs: 2.5Ohm @ 1.4A, 10V
Power Dissipation (Max): 2.5W (Ta), 49W (Tc)
Vgs(th) (Max) @ Id: 4V @ 250µA
Supplier Device Package: TO-252AA
Part Status: Obsolete
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±30V
Drain to Source Voltage (Vdss): 600 V
Gate Charge (Qg) (Max) @ Vgs: 19 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 670 pF @ 25 V
Description: MOSFET N-CH 600V 2.8A DPAK
Packaging: Cut Tape (CT)
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 2.8A (Tc)
Rds On (Max) @ Id, Vgs: 2.5Ohm @ 1.4A, 10V
Power Dissipation (Max): 2.5W (Ta), 49W (Tc)
Vgs(th) (Max) @ Id: 4V @ 250µA
Supplier Device Package: TO-252AA
Part Status: Obsolete
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±30V
Drain to Source Voltage (Vdss): 600 V
Gate Charge (Qg) (Max) @ Vgs: 19 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 670 pF @ 25 V
товар відсутній
MDB10SV |
Виробник: onsemi
Description: BRIDGE RECT 1P 1KV 1.2A MICRODIP
Packaging: Cut Tape (CT)
Package / Case: 4-SMD, Gull Wing
Mounting Type: Surface Mount
Diode Type: Single Phase
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: Standard
Supplier Device Package: 4-MicroDIP/SMD
Voltage - Peak Reverse (Max): 1 kV
Current - Average Rectified (Io): 1.2 A
Voltage - Forward (Vf) (Max) @ If: 1.015 V @ 1.2 A
Current - Reverse Leakage @ Vr: 10 µA @ 1000 V
Description: BRIDGE RECT 1P 1KV 1.2A MICRODIP
Packaging: Cut Tape (CT)
Package / Case: 4-SMD, Gull Wing
Mounting Type: Surface Mount
Diode Type: Single Phase
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: Standard
Supplier Device Package: 4-MicroDIP/SMD
Voltage - Peak Reverse (Max): 1 kV
Current - Average Rectified (Io): 1.2 A
Voltage - Forward (Vf) (Max) @ If: 1.015 V @ 1.2 A
Current - Reverse Leakage @ Vr: 10 µA @ 1000 V
товар відсутній
FDZ1416NZ |
Виробник: onsemi
Description: MOSFET 2N-CH 4WLCSP
Packaging: Cut Tape (CT)
Package / Case: 4-XFBGA, WLCSP
Mounting Type: Surface Mount
Configuration: 2 N-Channel (Dual) Common Drain
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
Power - Max: 500mW
Gate Charge (Qg) (Max) @ Vgs: 17nC @ 4.5V
Vgs(th) (Max) @ Id: 1.3V @ 250µA
Supplier Device Package: 4-WLCSP (1.6x1.4)
Part Status: Obsolete
Description: MOSFET 2N-CH 4WLCSP
Packaging: Cut Tape (CT)
Package / Case: 4-XFBGA, WLCSP
Mounting Type: Surface Mount
Configuration: 2 N-Channel (Dual) Common Drain
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
Power - Max: 500mW
Gate Charge (Qg) (Max) @ Vgs: 17nC @ 4.5V
Vgs(th) (Max) @ Id: 1.3V @ 250µA
Supplier Device Package: 4-WLCSP (1.6x1.4)
Part Status: Obsolete
товар відсутній
NC7SB3157P6X-F080 |
Виробник: onsemi
Description: IC SWITCH SPDT X 1 15OHM SC88
Packaging: Cut Tape (CT)
Package / Case: 6-TSSOP, SC-88, SOT-363
Mounting Type: Surface Mount
Operating Temperature: -40°C ~ 85°C (TA)
On-State Resistance (Max): 15Ohm
-3db Bandwidth: 250MHz
Supplier Device Package: SC-88 (SC-70-6)
Voltage - Supply, Single (V+): 1.65V ~ 5.5V
Charge Injection: 7pC
Crosstalk: -54dB @ 10MHz
Switch Circuit: SPDT
Multiplexer/Demultiplexer Circuit: 2:1
Channel-to-Channel Matching (ΔRon): 150mOhm
Switch Time (Ton, Toff) (Max): 5.2ns, 3.5ns
Channel Capacitance (CS(off), CD(off)): 6.5pF
Current - Leakage (IS(off)) (Max): 100nA
Number of Circuits: 1
Description: IC SWITCH SPDT X 1 15OHM SC88
Packaging: Cut Tape (CT)
Package / Case: 6-TSSOP, SC-88, SOT-363
Mounting Type: Surface Mount
Operating Temperature: -40°C ~ 85°C (TA)
On-State Resistance (Max): 15Ohm
-3db Bandwidth: 250MHz
Supplier Device Package: SC-88 (SC-70-6)
Voltage - Supply, Single (V+): 1.65V ~ 5.5V
Charge Injection: 7pC
Crosstalk: -54dB @ 10MHz
Switch Circuit: SPDT
Multiplexer/Demultiplexer Circuit: 2:1
Channel-to-Channel Matching (ΔRon): 150mOhm
Switch Time (Ton, Toff) (Max): 5.2ns, 3.5ns
Channel Capacitance (CS(off), CD(off)): 6.5pF
Current - Leakage (IS(off)) (Max): 100nA
Number of Circuits: 1
товар відсутній
NC7SB3157P6X-F40 |
Виробник: onsemi
Description: IC SWITCH SPDT X 1 15OHM SC88
Packaging: Cut Tape (CT)
Package / Case: 6-TSSOP, SC-88, SOT-363
Mounting Type: Surface Mount
Operating Temperature: -40°C ~ 85°C (TA)
On-State Resistance (Max): 15Ohm
-3db Bandwidth: 250MHz
Supplier Device Package: SC-88 (SC-70-6)
Voltage - Supply, Single (V+): 1.65V ~ 5.5V
Charge Injection: 7pC
Crosstalk: -54dB @ 10MHz
Switch Circuit: SPDT
Multiplexer/Demultiplexer Circuit: 2:1
Channel-to-Channel Matching (ΔRon): 150mOhm
Switch Time (Ton, Toff) (Max): 5.2ns, 3.5ns
Channel Capacitance (CS(off), CD(off)): 6.5pF
Current - Leakage (IS(off)) (Max): 100nA
Number of Circuits: 1
Description: IC SWITCH SPDT X 1 15OHM SC88
Packaging: Cut Tape (CT)
Package / Case: 6-TSSOP, SC-88, SOT-363
Mounting Type: Surface Mount
Operating Temperature: -40°C ~ 85°C (TA)
On-State Resistance (Max): 15Ohm
-3db Bandwidth: 250MHz
Supplier Device Package: SC-88 (SC-70-6)
Voltage - Supply, Single (V+): 1.65V ~ 5.5V
Charge Injection: 7pC
Crosstalk: -54dB @ 10MHz
Switch Circuit: SPDT
Multiplexer/Demultiplexer Circuit: 2:1
Channel-to-Channel Matching (ΔRon): 150mOhm
Switch Time (Ton, Toff) (Max): 5.2ns, 3.5ns
Channel Capacitance (CS(off), CD(off)): 6.5pF
Current - Leakage (IS(off)) (Max): 100nA
Number of Circuits: 1
товар відсутній
ESD8004MUTAG |
Виробник: onsemi
Description: TVS DIODE 3.3VWM 8VC 10UDFN
Packaging: Tape & Reel (TR)
Package / Case: 10-UFDFN
Mounting Type: Surface Mount
Type: Zener
Operating Temperature: -55°C ~ 125°C (TJ)
Applications: USB
Capacitance @ Frequency: 0.3pF @ 1MHz
Current - Peak Pulse (10/1000µs): 16A
Voltage - Reverse Standoff (Typ): 3.3V (Max)
Supplier Device Package: 10-UDFN (2.5x1)
Unidirectional Channels: 4
Voltage - Breakdown (Min): 5.5V
Voltage - Clamping (Max) @ Ipp: 8V (Typ)
Power Line Protection: No
Part Status: Active
Description: TVS DIODE 3.3VWM 8VC 10UDFN
Packaging: Tape & Reel (TR)
Package / Case: 10-UFDFN
Mounting Type: Surface Mount
Type: Zener
Operating Temperature: -55°C ~ 125°C (TJ)
Applications: USB
Capacitance @ Frequency: 0.3pF @ 1MHz
Current - Peak Pulse (10/1000µs): 16A
Voltage - Reverse Standoff (Typ): 3.3V (Max)
Supplier Device Package: 10-UDFN (2.5x1)
Unidirectional Channels: 4
Voltage - Breakdown (Min): 5.5V
Voltage - Clamping (Max) @ Ipp: 8V (Typ)
Power Line Protection: No
Part Status: Active
на замовлення 6000 шт:
термін постачання 21-31 дні (днів)Кількість | Ціна без ПДВ |
---|---|
3000+ | 20.61 грн |
6000+ | 18.8 грн |
ESD8040MUTAG |
Виробник: onsemi
Description: TVS DIODE 3.3VWM 12VC 18UDFN
Packaging: Tape & Reel (TR)
Package / Case: 18-UFDFN Exposed Pad
Mounting Type: Surface Mount
Type: Zener
Operating Temperature: -55°C ~ 125°C (TJ)
Applications: HDMI
Capacitance @ Frequency: 0.3pF @ 1MHz
Current - Peak Pulse (10/1000µs): 16A (100ns)
Voltage - Reverse Standoff (Typ): 3.3V (Max)
Supplier Device Package: 18-UDFN (5.5x1.5)
Unidirectional Channels: 14
Voltage - Breakdown (Min): 5.5V
Voltage - Clamping (Max) @ Ipp: 12V (Typ)
Power Line Protection: No
Part Status: Active
Description: TVS DIODE 3.3VWM 12VC 18UDFN
Packaging: Tape & Reel (TR)
Package / Case: 18-UFDFN Exposed Pad
Mounting Type: Surface Mount
Type: Zener
Operating Temperature: -55°C ~ 125°C (TJ)
Applications: HDMI
Capacitance @ Frequency: 0.3pF @ 1MHz
Current - Peak Pulse (10/1000µs): 16A (100ns)
Voltage - Reverse Standoff (Typ): 3.3V (Max)
Supplier Device Package: 18-UDFN (5.5x1.5)
Unidirectional Channels: 14
Voltage - Breakdown (Min): 5.5V
Voltage - Clamping (Max) @ Ipp: 12V (Typ)
Power Line Protection: No
Part Status: Active
на замовлення 3000 шт:
термін постачання 21-31 дні (днів)Кількість | Ціна без ПДВ |
---|---|
3000+ | 55.59 грн |
ESD8006MUTAG |
Виробник: onsemi
Description: TVS DIODE 3.3VWM 8.4VC 8-UDFN
Packaging: Tape & Reel (TR)
Package / Case: 10-UFDFN
Mounting Type: Surface Mount
Type: Zener
Operating Temperature: -55°C ~ 125°C (TJ)
Applications: USB
Capacitance @ Frequency: 0.32pF @ 1MHz
Current - Peak Pulse (10/1000µs): 16A
Voltage - Reverse Standoff (Typ): 3.3V (Max)
Supplier Device Package: 8-UDFN (3.3x1.0)
Unidirectional Channels: 6
Voltage - Breakdown (Min): 5.5V
Voltage - Clamping (Max) @ Ipp: 8.4V (Typ)
Power Line Protection: No
Part Status: Active
Description: TVS DIODE 3.3VWM 8.4VC 8-UDFN
Packaging: Tape & Reel (TR)
Package / Case: 10-UFDFN
Mounting Type: Surface Mount
Type: Zener
Operating Temperature: -55°C ~ 125°C (TJ)
Applications: USB
Capacitance @ Frequency: 0.32pF @ 1MHz
Current - Peak Pulse (10/1000µs): 16A
Voltage - Reverse Standoff (Typ): 3.3V (Max)
Supplier Device Package: 8-UDFN (3.3x1.0)
Unidirectional Channels: 6
Voltage - Breakdown (Min): 5.5V
Voltage - Clamping (Max) @ Ipp: 8.4V (Typ)
Power Line Protection: No
Part Status: Active
на замовлення 9000 шт:
термін постачання 21-31 дні (днів)Кількість | Ціна без ПДВ |
---|---|
3000+ | 25.2 грн |
6000+ | 23.11 грн |
9000+ | 22.05 грн |
ESD8008MUTAG |
Виробник: onsemi
Description: TVS DIODE 3.3VWM 8.1VC 14UDFN
Packaging: Tape & Reel (TR)
Package / Case: 14-UFDFN
Mounting Type: Surface Mount
Type: Zener
Operating Temperature: -55°C ~ 125°C (TJ)
Applications: General Purpose
Capacitance @ Frequency: 0.3pF @ 1MHz
Current - Peak Pulse (10/1000µs): 16A
Voltage - Reverse Standoff (Typ): 3.3V (Max)
Supplier Device Package: 14-UDFN (5.5x1.5)
Unidirectional Channels: 8
Voltage - Breakdown (Min): 5.5V
Voltage - Clamping (Max) @ Ipp: 8.1V (Typ)
Power Line Protection: No
Part Status: Active
Description: TVS DIODE 3.3VWM 8.1VC 14UDFN
Packaging: Tape & Reel (TR)
Package / Case: 14-UFDFN
Mounting Type: Surface Mount
Type: Zener
Operating Temperature: -55°C ~ 125°C (TJ)
Applications: General Purpose
Capacitance @ Frequency: 0.3pF @ 1MHz
Current - Peak Pulse (10/1000µs): 16A
Voltage - Reverse Standoff (Typ): 3.3V (Max)
Supplier Device Package: 14-UDFN (5.5x1.5)
Unidirectional Channels: 8
Voltage - Breakdown (Min): 5.5V
Voltage - Clamping (Max) @ Ipp: 8.1V (Typ)
Power Line Protection: No
Part Status: Active
на замовлення 3000 шт:
термін постачання 21-31 дні (днів)Кількість | Ціна без ПДВ |
---|---|
3000+ | 17.87 грн |
ESD8104MUTAG |
Виробник: onsemi
Description: TVS DIODE 3.3VWM 11.4VC 10UDFN
Packaging: Tape & Reel (TR)
Package / Case: 10-UFDFN
Mounting Type: Surface Mount
Type: Zener
Operating Temperature: -55°C ~ 125°C (TJ)
Applications: HDMI, USB
Capacitance @ Frequency: 0.3pF @ 1MHz
Current - Peak Pulse (10/1000µs): 16A (100ns)
Voltage - Reverse Standoff (Typ): 3.3V (Max)
Supplier Device Package: 10-UDFN (2.5x1)
Unidirectional Channels: 4
Voltage - Breakdown (Min): 4V
Voltage - Clamping (Max) @ Ipp: 11.4V (Typ)
Power Line Protection: No
Part Status: Active
Description: TVS DIODE 3.3VWM 11.4VC 10UDFN
Packaging: Tape & Reel (TR)
Package / Case: 10-UFDFN
Mounting Type: Surface Mount
Type: Zener
Operating Temperature: -55°C ~ 125°C (TJ)
Applications: HDMI, USB
Capacitance @ Frequency: 0.3pF @ 1MHz
Current - Peak Pulse (10/1000µs): 16A (100ns)
Voltage - Reverse Standoff (Typ): 3.3V (Max)
Supplier Device Package: 10-UDFN (2.5x1)
Unidirectional Channels: 4
Voltage - Breakdown (Min): 4V
Voltage - Clamping (Max) @ Ipp: 11.4V (Typ)
Power Line Protection: No
Part Status: Active
на замовлення 15000 шт:
термін постачання 21-31 дні (днів)Кількість | Ціна без ПДВ |
---|---|
3000+ | 13.34 грн |
6000+ | 12.19 грн |
9000+ | 11.32 грн |
ESD8004MUTAG |
Виробник: onsemi
Description: TVS DIODE 3.3VWM 8VC 10UDFN
Packaging: Cut Tape (CT)
Package / Case: 10-UFDFN
Mounting Type: Surface Mount
Type: Zener
Operating Temperature: -55°C ~ 125°C (TJ)
Applications: USB
Capacitance @ Frequency: 0.3pF @ 1MHz
Current - Peak Pulse (10/1000µs): 16A
Voltage - Reverse Standoff (Typ): 3.3V (Max)
Supplier Device Package: 10-UDFN (2.5x1)
Unidirectional Channels: 4
Voltage - Breakdown (Min): 5.5V
Voltage - Clamping (Max) @ Ipp: 8V (Typ)
Power Line Protection: No
Part Status: Active
Description: TVS DIODE 3.3VWM 8VC 10UDFN
Packaging: Cut Tape (CT)
Package / Case: 10-UFDFN
Mounting Type: Surface Mount
Type: Zener
Operating Temperature: -55°C ~ 125°C (TJ)
Applications: USB
Capacitance @ Frequency: 0.3pF @ 1MHz
Current - Peak Pulse (10/1000µs): 16A
Voltage - Reverse Standoff (Typ): 3.3V (Max)
Supplier Device Package: 10-UDFN (2.5x1)
Unidirectional Channels: 4
Voltage - Breakdown (Min): 5.5V
Voltage - Clamping (Max) @ Ipp: 8V (Typ)
Power Line Protection: No
Part Status: Active
на замовлення 8610 шт:
термін постачання 21-31 дні (днів)Кількість | Ціна без ПДВ |
---|---|
6+ | 54.75 грн |
10+ | 45.3 грн |
100+ | 31.34 грн |
500+ | 24.58 грн |
1000+ | 20.91 грн |
ESD8040MUTAG |
Виробник: onsemi
Description: TVS DIODE 3.3VWM 12VC 18UDFN
Packaging: Cut Tape (CT)
Package / Case: 18-UFDFN Exposed Pad
Mounting Type: Surface Mount
Type: Zener
Operating Temperature: -55°C ~ 125°C (TJ)
Applications: HDMI
Capacitance @ Frequency: 0.3pF @ 1MHz
Current - Peak Pulse (10/1000µs): 16A (100ns)
Voltage - Reverse Standoff (Typ): 3.3V (Max)
Supplier Device Package: 18-UDFN (5.5x1.5)
Unidirectional Channels: 14
Voltage - Breakdown (Min): 5.5V
Voltage - Clamping (Max) @ Ipp: 12V (Typ)
Power Line Protection: No
Part Status: Active
Description: TVS DIODE 3.3VWM 12VC 18UDFN
Packaging: Cut Tape (CT)
Package / Case: 18-UFDFN Exposed Pad
Mounting Type: Surface Mount
Type: Zener
Operating Temperature: -55°C ~ 125°C (TJ)
Applications: HDMI
Capacitance @ Frequency: 0.3pF @ 1MHz
Current - Peak Pulse (10/1000µs): 16A (100ns)
Voltage - Reverse Standoff (Typ): 3.3V (Max)
Supplier Device Package: 18-UDFN (5.5x1.5)
Unidirectional Channels: 14
Voltage - Breakdown (Min): 5.5V
Voltage - Clamping (Max) @ Ipp: 12V (Typ)
Power Line Protection: No
Part Status: Active
на замовлення 5202 шт:
термін постачання 21-31 дні (днів)Кількість | Ціна без ПДВ |
---|---|
3+ | 123.18 грн |
10+ | 98.57 грн |
100+ | 78.48 грн |
500+ | 62.32 грн |
1000+ | 52.88 грн |
ESD8006MUTAG |
Виробник: onsemi
Description: TVS DIODE 3.3VWM 8.4VC 8-UDFN
Packaging: Cut Tape (CT)
Package / Case: 10-UFDFN
Mounting Type: Surface Mount
Type: Zener
Operating Temperature: -55°C ~ 125°C (TJ)
Applications: USB
Capacitance @ Frequency: 0.32pF @ 1MHz
Current - Peak Pulse (10/1000µs): 16A
Voltage - Reverse Standoff (Typ): 3.3V (Max)
Supplier Device Package: 8-UDFN (3.3x1.0)
Unidirectional Channels: 6
Voltage - Breakdown (Min): 5.5V
Voltage - Clamping (Max) @ Ipp: 8.4V (Typ)
Power Line Protection: No
Part Status: Active
Description: TVS DIODE 3.3VWM 8.4VC 8-UDFN
Packaging: Cut Tape (CT)
Package / Case: 10-UFDFN
Mounting Type: Surface Mount
Type: Zener
Operating Temperature: -55°C ~ 125°C (TJ)
Applications: USB
Capacitance @ Frequency: 0.32pF @ 1MHz
Current - Peak Pulse (10/1000µs): 16A
Voltage - Reverse Standoff (Typ): 3.3V (Max)
Supplier Device Package: 8-UDFN (3.3x1.0)
Unidirectional Channels: 6
Voltage - Breakdown (Min): 5.5V
Voltage - Clamping (Max) @ Ipp: 8.4V (Typ)
Power Line Protection: No
Part Status: Active
на замовлення 10574 шт:
термін постачання 21-31 дні (днів)Кількість | Ціна без ПДВ |
---|---|
5+ | 61.23 грн |
10+ | 48 грн |
100+ | 37.33 грн |
500+ | 29.7 грн |
1000+ | 24.19 грн |
ESD8008MUTAG |
Виробник: onsemi
Description: TVS DIODE 3.3VWM 8.1VC 14UDFN
Packaging: Cut Tape (CT)
Package / Case: 14-UFDFN
Mounting Type: Surface Mount
Type: Zener
Operating Temperature: -55°C ~ 125°C (TJ)
Applications: General Purpose
Capacitance @ Frequency: 0.3pF @ 1MHz
Current - Peak Pulse (10/1000µs): 16A
Voltage - Reverse Standoff (Typ): 3.3V (Max)
Supplier Device Package: 14-UDFN (5.5x1.5)
Unidirectional Channels: 8
Voltage - Breakdown (Min): 5.5V
Voltage - Clamping (Max) @ Ipp: 8.1V (Typ)
Power Line Protection: No
Part Status: Active
Description: TVS DIODE 3.3VWM 8.1VC 14UDFN
Packaging: Cut Tape (CT)
Package / Case: 14-UFDFN
Mounting Type: Surface Mount
Type: Zener
Operating Temperature: -55°C ~ 125°C (TJ)
Applications: General Purpose
Capacitance @ Frequency: 0.3pF @ 1MHz
Current - Peak Pulse (10/1000µs): 16A
Voltage - Reverse Standoff (Typ): 3.3V (Max)
Supplier Device Package: 14-UDFN (5.5x1.5)
Unidirectional Channels: 8
Voltage - Breakdown (Min): 5.5V
Voltage - Clamping (Max) @ Ipp: 8.1V (Typ)
Power Line Protection: No
Part Status: Active
на замовлення 4399 шт:
термін постачання 21-31 дні (днів)Кількість | Ціна без ПДВ |
---|---|
7+ | 47.54 грн |
10+ | 39.26 грн |
100+ | 27.18 грн |
500+ | 21.31 грн |
1000+ | 18.14 грн |
ESD8104MUTAG |
Виробник: onsemi
Description: TVS DIODE 3.3VWM 11.4VC 10UDFN
Packaging: Cut Tape (CT)
Package / Case: 10-UFDFN
Mounting Type: Surface Mount
Type: Zener
Operating Temperature: -55°C ~ 125°C (TJ)
Applications: HDMI, USB
Capacitance @ Frequency: 0.3pF @ 1MHz
Current - Peak Pulse (10/1000µs): 16A (100ns)
Voltage - Reverse Standoff (Typ): 3.3V (Max)
Supplier Device Package: 10-UDFN (2.5x1)
Unidirectional Channels: 4
Voltage - Breakdown (Min): 4V
Voltage - Clamping (Max) @ Ipp: 11.4V (Typ)
Power Line Protection: No
Part Status: Active
Description: TVS DIODE 3.3VWM 11.4VC 10UDFN
Packaging: Cut Tape (CT)
Package / Case: 10-UFDFN
Mounting Type: Surface Mount
Type: Zener
Operating Temperature: -55°C ~ 125°C (TJ)
Applications: HDMI, USB
Capacitance @ Frequency: 0.3pF @ 1MHz
Current - Peak Pulse (10/1000µs): 16A (100ns)
Voltage - Reverse Standoff (Typ): 3.3V (Max)
Supplier Device Package: 10-UDFN (2.5x1)
Unidirectional Channels: 4
Voltage - Breakdown (Min): 4V
Voltage - Clamping (Max) @ Ipp: 11.4V (Typ)
Power Line Protection: No
Part Status: Active
на замовлення 20622 шт:
термін постачання 21-31 дні (днів)Кількість | Ціна без ПДВ |
---|---|
8+ | 39.62 грн |
10+ | 32.53 грн |
100+ | 22.64 грн |
500+ | 16.59 грн |
1000+ | 13.48 грн |
MG2040MUTAG |
Виробник: onsemi
Description: TVS DIODE 5VWM 10VC 18UDFN
Packaging: Cut Tape (CT)
Package / Case: 18-UFDFN Exposed Pad
Mounting Type: Surface Mount
Type: Zener
Operating Temperature: -55°C ~ 125°C (TJ)
Applications: HDMI
Capacitance @ Frequency: 0.35pF @ 1MHz
Current - Peak Pulse (10/1000µs): 1A (8/20µs)
Voltage - Reverse Standoff (Typ): 5V (Max)
Supplier Device Package: 18-UDFN (5.5x1.5)
Unidirectional Channels: 14
Voltage - Breakdown (Min): 5.5V
Voltage - Clamping (Max) @ Ipp: 10V
Power Line Protection: No
Part Status: Active
Description: TVS DIODE 5VWM 10VC 18UDFN
Packaging: Cut Tape (CT)
Package / Case: 18-UFDFN Exposed Pad
Mounting Type: Surface Mount
Type: Zener
Operating Temperature: -55°C ~ 125°C (TJ)
Applications: HDMI
Capacitance @ Frequency: 0.35pF @ 1MHz
Current - Peak Pulse (10/1000µs): 1A (8/20µs)
Voltage - Reverse Standoff (Typ): 5V (Max)
Supplier Device Package: 18-UDFN (5.5x1.5)
Unidirectional Channels: 14
Voltage - Breakdown (Min): 5.5V
Voltage - Clamping (Max) @ Ipp: 10V
Power Line Protection: No
Part Status: Active
на замовлення 41350 шт:
термін постачання 21-31 дні (днів)Кількість | Ціна без ПДВ |
---|---|
5+ | 64.11 грн |
10+ | 50.29 грн |
100+ | 39.11 грн |
500+ | 31.11 грн |
1000+ | 25.35 грн |
NIS5132MN2TXG |
Виробник: onsemi
Description: IC ELECTRONIC FUSE 10DFN
Packaging: Cut Tape (CT)
Package / Case: 10-VFDFN Exposed Pad
Sensing Method: High-Side
Mounting Type: Surface Mount
Function: Electronic Fuse
Voltage - Input: 9V ~ 18V
Current - Output: 3.6A
Operating Temperature: -40°C ~ 150°C
Supplier Device Package: 10-DFN (3x3)
Part Status: Not For New Designs
Description: IC ELECTRONIC FUSE 10DFN
Packaging: Cut Tape (CT)
Package / Case: 10-VFDFN Exposed Pad
Sensing Method: High-Side
Mounting Type: Surface Mount
Function: Electronic Fuse
Voltage - Input: 9V ~ 18V
Current - Output: 3.6A
Operating Temperature: -40°C ~ 150°C
Supplier Device Package: 10-DFN (3x3)
Part Status: Not For New Designs
на замовлення 4973 шт:
термін постачання 21-31 дні (днів)Кількість | Ціна без ПДВ |
---|---|
4+ | 82.84 грн |
10+ | 71.52 грн |
25+ | 67.81 грн |
100+ | 48.87 грн |
250+ | 43.19 грн |
500+ | 40.92 грн |
1000+ | 31.3 грн |
2500+ | 29.74 грн |
NIS5135MN2TXG |
Виробник: onsemi
Description: IC ELECTRONIC FUSE 10DFN
Packaging: Cut Tape (CT)
Package / Case: 10-VFDFN Exposed Pad
Sensing Method: High-Side
Mounting Type: Surface Mount
Function: Electronic Fuse
Voltage - Input: 3.1V ~ 18V
Current - Output: 3.6A
Operating Temperature: -40°C ~ 150°C
Supplier Device Package: 10-DFN (3x3)
Description: IC ELECTRONIC FUSE 10DFN
Packaging: Cut Tape (CT)
Package / Case: 10-VFDFN Exposed Pad
Sensing Method: High-Side
Mounting Type: Surface Mount
Function: Electronic Fuse
Voltage - Input: 3.1V ~ 18V
Current - Output: 3.6A
Operating Temperature: -40°C ~ 150°C
Supplier Device Package: 10-DFN (3x3)
на замовлення 7081 шт:
термін постачання 21-31 дні (днів)Кількість | Ціна без ПДВ |
---|---|
4+ | 80.68 грн |
10+ | 69.51 грн |
25+ | 65.96 грн |
100+ | 47.53 грн |
250+ | 42 грн |
500+ | 39.79 грн |
1000+ | 30.44 грн |
NSBC124EF3T5G |
Виробник: onsemi
Description: TRANS PREBIAS NPN 50V SOT1123
Packaging: Cut Tape (CT)
Package / Case: SOT-1123
Mounting Type: Surface Mount
Transistor Type: NPN - Pre-Biased
Vce Saturation (Max) @ Ib, Ic: 250mV @ 300µA, 10mA
Current - Collector Cutoff (Max): 500nA
DC Current Gain (hFE) (Min) @ Ic, Vce: 60 @ 5mA, 10V
Supplier Device Package: SOT-1123
Current - Collector (Ic) (Max): 100 mA
Voltage - Collector Emitter Breakdown (Max): 50 V
Power - Max: 254 mW
Resistor - Base (R1): 22 kOhms
Resistor - Emitter Base (R2): 22 kOhms
Description: TRANS PREBIAS NPN 50V SOT1123
Packaging: Cut Tape (CT)
Package / Case: SOT-1123
Mounting Type: Surface Mount
Transistor Type: NPN - Pre-Biased
Vce Saturation (Max) @ Ib, Ic: 250mV @ 300µA, 10mA
Current - Collector Cutoff (Max): 500nA
DC Current Gain (hFE) (Min) @ Ic, Vce: 60 @ 5mA, 10V
Supplier Device Package: SOT-1123
Current - Collector (Ic) (Max): 100 mA
Voltage - Collector Emitter Breakdown (Max): 50 V
Power - Max: 254 mW
Resistor - Base (R1): 22 kOhms
Resistor - Emitter Base (R2): 22 kOhms
на замовлення 44316 шт:
термін постачання 21-31 дні (днів)Кількість | Ціна без ПДВ |
---|---|
13+ | 23.77 грн |
16+ | 17.83 грн |
100+ | 10.67 грн |
500+ | 9.27 грн |
1000+ | 6.31 грн |
2000+ | 5.81 грн |
FEBFHR1200-SPG01A-GEVB |
Виробник: onsemi
Description: EVAL BOARD SHUNT REGULATOR
Packaging: Bulk
Type: Power Management
Utilized IC / Part: FHR1200
Supplied Contents: Board(s)
Description: EVAL BOARD SHUNT REGULATOR
Packaging: Bulk
Type: Power Management
Utilized IC / Part: FHR1200
Supplied Contents: Board(s)
товар відсутній
2N7002WST1G |
Виробник: onsemi
Description: MOSFET N-CH 60V 0.115A SC70
Packaging: Tape & Reel (TR)
Package / Case: SC-70, SOT-323
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Current - Continuous Drain (Id) @ 25°C: 310mA (Ta)
Supplier Device Package: SC-70-3 (SOT323)
Part Status: Obsolete
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Description: MOSFET N-CH 60V 0.115A SC70
Packaging: Tape & Reel (TR)
Package / Case: SC-70, SOT-323
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Current - Continuous Drain (Id) @ 25°C: 310mA (Ta)
Supplier Device Package: SC-70-3 (SOT323)
Part Status: Obsolete
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
товар відсутній
2SA1418T-TD-E |
Виробник: onsemi
Description: TRANS PNP 160V 0.7A PCP
Packaging: Tape & Reel (TR)
Package / Case: TO-243AA
Mounting Type: Surface Mount
Supplier Device Package: PCP
Part Status: Obsolete
Description: TRANS PNP 160V 0.7A PCP
Packaging: Tape & Reel (TR)
Package / Case: TO-243AA
Mounting Type: Surface Mount
Supplier Device Package: PCP
Part Status: Obsolete
товар відсутній
2SA2125-S-TD-E |
Виробник: onsemi
Description: TRANS PNP 50V 3A PCP
Packaging: Tape & Reel (TR)
Package / Case: TO-243AA
Mounting Type: Surface Mount
Transistor Type: PNP
Vce Saturation (Max) @ Ib, Ic: 500mV @ 100mA, 2A
Current - Collector Cutoff (Max): 1µA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce: 200 @ 100mA, 2V
Frequency - Transition: 390MHz
Supplier Device Package: PCP
Part Status: Obsolete
Current - Collector (Ic) (Max): 3 A
Voltage - Collector Emitter Breakdown (Max): 50 V
Power - Max: 3.5 W
Description: TRANS PNP 50V 3A PCP
Packaging: Tape & Reel (TR)
Package / Case: TO-243AA
Mounting Type: Surface Mount
Transistor Type: PNP
Vce Saturation (Max) @ Ib, Ic: 500mV @ 100mA, 2A
Current - Collector Cutoff (Max): 1µA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce: 200 @ 100mA, 2V
Frequency - Transition: 390MHz
Supplier Device Package: PCP
Part Status: Obsolete
Current - Collector (Ic) (Max): 3 A
Voltage - Collector Emitter Breakdown (Max): 50 V
Power - Max: 3.5 W
товар відсутній
2SA2125-S-TD-H |
Виробник: onsemi
Description: TRANS PNP 50V 3A PCP
Packaging: Tape & Reel (TR)
Package / Case: TO-243AA
Mounting Type: Surface Mount
Transistor Type: PNP
Vce Saturation (Max) @ Ib, Ic: 500mV @ 100mA, 2A
Current - Collector Cutoff (Max): 1µA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce: 200 @ 100mA, 2V
Frequency - Transition: 390MHz
Supplier Device Package: PCP
Part Status: Obsolete
Current - Collector (Ic) (Max): 3 A
Voltage - Collector Emitter Breakdown (Max): 50 V
Power - Max: 3.5 W
Description: TRANS PNP 50V 3A PCP
Packaging: Tape & Reel (TR)
Package / Case: TO-243AA
Mounting Type: Surface Mount
Transistor Type: PNP
Vce Saturation (Max) @ Ib, Ic: 500mV @ 100mA, 2A
Current - Collector Cutoff (Max): 1µA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce: 200 @ 100mA, 2V
Frequency - Transition: 390MHz
Supplier Device Package: PCP
Part Status: Obsolete
Current - Collector (Ic) (Max): 3 A
Voltage - Collector Emitter Breakdown (Max): 50 V
Power - Max: 3.5 W
товар відсутній
2SA2126-S-TL-E |
Виробник: onsemi
Description: TRANS PNP 50V 3A TPFA
Packaging: Tape & Reel (TR)
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Mounting Type: Surface Mount
Transistor Type: PNP
Operating Temperature: 150°C (TJ)
Vce Saturation (Max) @ Ib, Ic: 520mV @ 100mA, 2A
Current - Collector Cutoff (Max): 1µA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce: 200 @ 100mA, 2V
Frequency - Transition: 390MHz
Supplier Device Package: TP-FA
Part Status: Obsolete
Current - Collector (Ic) (Max): 3 A
Voltage - Collector Emitter Breakdown (Max): 50 V
Power - Max: 800 mW
Description: TRANS PNP 50V 3A TPFA
Packaging: Tape & Reel (TR)
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Mounting Type: Surface Mount
Transistor Type: PNP
Operating Temperature: 150°C (TJ)
Vce Saturation (Max) @ Ib, Ic: 520mV @ 100mA, 2A
Current - Collector Cutoff (Max): 1µA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce: 200 @ 100mA, 2V
Frequency - Transition: 390MHz
Supplier Device Package: TP-FA
Part Status: Obsolete
Current - Collector (Ic) (Max): 3 A
Voltage - Collector Emitter Breakdown (Max): 50 V
Power - Max: 800 mW
товар відсутній
2SA2210-1E |
Виробник: onsemi
Description: TRANS PNP 50V 20A TO220F-3SG
Packaging: Tube
Package / Case: TO-220-3 Full Pack
Mounting Type: Through Hole
Transistor Type: PNP
Operating Temperature: 150°C (TJ)
Vce Saturation (Max) @ Ib, Ic: 500mV @ 350mA, 7A
Current - Collector Cutoff (Max): 10µA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce: 150 @ 1A, 2V
Frequency - Transition: 140MHz
Supplier Device Package: TO-220F-3SG
Part Status: Active
Current - Collector (Ic) (Max): 20 A
Voltage - Collector Emitter Breakdown (Max): 50 V
Power - Max: 2 W
Description: TRANS PNP 50V 20A TO220F-3SG
Packaging: Tube
Package / Case: TO-220-3 Full Pack
Mounting Type: Through Hole
Transistor Type: PNP
Operating Temperature: 150°C (TJ)
Vce Saturation (Max) @ Ib, Ic: 500mV @ 350mA, 7A
Current - Collector Cutoff (Max): 10µA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce: 150 @ 1A, 2V
Frequency - Transition: 140MHz
Supplier Device Package: TO-220F-3SG
Part Status: Active
Current - Collector (Ic) (Max): 20 A
Voltage - Collector Emitter Breakdown (Max): 50 V
Power - Max: 2 W
на замовлення 297 шт:
термін постачання 21-31 дні (днів)Кількість | Ціна без ПДВ |
---|---|
3+ | 131.83 грн |
50+ | 101.78 грн |
100+ | 83.75 грн |
2SA2210-EPN-1EX |
Виробник: onsemi
Description: TRANS PNP 50V 20A TO220F-3SG
Packaging: Tube
Package / Case: TO-220-3 Full Pack
Mounting Type: Through Hole
Transistor Type: PNP
Vce Saturation (Max) @ Ib, Ic: 500mV @ 350mA, 7A
Current - Collector Cutoff (Max): 10µA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce: 150 @ 1A, 2V
Frequency - Transition: 140MHz
Supplier Device Package: TO-220F-3SG
Part Status: Obsolete
Current - Collector (Ic) (Max): 20 A
Voltage - Collector Emitter Breakdown (Max): 50 V
Power - Max: 2 W
Description: TRANS PNP 50V 20A TO220F-3SG
Packaging: Tube
Package / Case: TO-220-3 Full Pack
Mounting Type: Through Hole
Transistor Type: PNP
Vce Saturation (Max) @ Ib, Ic: 500mV @ 350mA, 7A
Current - Collector Cutoff (Max): 10µA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce: 150 @ 1A, 2V
Frequency - Transition: 140MHz
Supplier Device Package: TO-220F-3SG
Part Status: Obsolete
Current - Collector (Ic) (Max): 20 A
Voltage - Collector Emitter Breakdown (Max): 50 V
Power - Max: 2 W
товар відсутній
2SB1203S-H-TL-E |
Виробник: onsemi
Description: TRANS PNP 50V 5A TPFA
Packaging: Tape & Reel (TR)
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Mounting Type: Surface Mount
Transistor Type: PNP
Operating Temperature: 150°C (TJ)
Vce Saturation (Max) @ Ib, Ic: 550mV @ 150mA, 3A
Current - Collector Cutoff (Max): 1µA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce: 140 @ 500mA, 2V
Frequency - Transition: 130MHz
Supplier Device Package: TP-FA
Part Status: Obsolete
Current - Collector (Ic) (Max): 5 A
Voltage - Collector Emitter Breakdown (Max): 50 V
Power - Max: 1 W
Description: TRANS PNP 50V 5A TPFA
Packaging: Tape & Reel (TR)
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Mounting Type: Surface Mount
Transistor Type: PNP
Operating Temperature: 150°C (TJ)
Vce Saturation (Max) @ Ib, Ic: 550mV @ 150mA, 3A
Current - Collector Cutoff (Max): 1µA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce: 140 @ 500mA, 2V
Frequency - Transition: 130MHz
Supplier Device Package: TP-FA
Part Status: Obsolete
Current - Collector (Ic) (Max): 5 A
Voltage - Collector Emitter Breakdown (Max): 50 V
Power - Max: 1 W
товар відсутній
2SB1203T-H-TL-E |
Виробник: onsemi
Description: TRANS PNP 50V 5A TPFA
Packaging: Tape & Reel (TR)
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Mounting Type: Surface Mount
Transistor Type: PNP
Operating Temperature: 150°C (TJ)
Vce Saturation (Max) @ Ib, Ic: 550mV @ 150mA, 3A
Current - Collector Cutoff (Max): 1µA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce: 200 @ 500mA, 2V
Frequency - Transition: 130MHz
Supplier Device Package: TP-FA
Part Status: Obsolete
Current - Collector (Ic) (Max): 5 A
Voltage - Collector Emitter Breakdown (Max): 50 V
Power - Max: 1 W
Description: TRANS PNP 50V 5A TPFA
Packaging: Tape & Reel (TR)
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Mounting Type: Surface Mount
Transistor Type: PNP
Operating Temperature: 150°C (TJ)
Vce Saturation (Max) @ Ib, Ic: 550mV @ 150mA, 3A
Current - Collector Cutoff (Max): 1µA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce: 200 @ 500mA, 2V
Frequency - Transition: 130MHz
Supplier Device Package: TP-FA
Part Status: Obsolete
Current - Collector (Ic) (Max): 5 A
Voltage - Collector Emitter Breakdown (Max): 50 V
Power - Max: 1 W
товар відсутній
2SB817C-1E |
Виробник: onsemi
Description: TRANS PNP 140V 12A TO3P-3L
Packaging: Tube
Package / Case: TO-3P-3, SC-65-3
Mounting Type: Through Hole
Transistor Type: PNP
Operating Temperature: 150°C (TJ)
Vce Saturation (Max) @ Ib, Ic: 2V @ 500mA, 5A
Current - Collector Cutoff (Max): 100µA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce: 100 @ 1A, 5V
Frequency - Transition: 10MHz
Supplier Device Package: TO-3P-3L
Part Status: Obsolete
Current - Collector (Ic) (Max): 12 A
Voltage - Collector Emitter Breakdown (Max): 140 V
Power - Max: 120 W
Description: TRANS PNP 140V 12A TO3P-3L
Packaging: Tube
Package / Case: TO-3P-3, SC-65-3
Mounting Type: Through Hole
Transistor Type: PNP
Operating Temperature: 150°C (TJ)
Vce Saturation (Max) @ Ib, Ic: 2V @ 500mA, 5A
Current - Collector Cutoff (Max): 100µA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce: 100 @ 1A, 5V
Frequency - Transition: 10MHz
Supplier Device Package: TO-3P-3L
Part Status: Obsolete
Current - Collector (Ic) (Max): 12 A
Voltage - Collector Emitter Breakdown (Max): 140 V
Power - Max: 120 W
товар відсутній
2SC3332R |
Виробник: onsemi
Description: TRANS NPN 160V 0.7A 3NP
Packaging: Bag
Package / Case: TO-226-3, TO-92-3 (TO-226AA)
Mounting Type: Through Hole
Supplier Device Package: 3-NP
Part Status: Obsolete
Description: TRANS NPN 160V 0.7A 3NP
Packaging: Bag
Package / Case: TO-226-3, TO-92-3 (TO-226AA)
Mounting Type: Through Hole
Supplier Device Package: 3-NP
Part Status: Obsolete
товар відсутній
2SC3332R-AA |
Виробник: onsemi
Description: TRANS NPN 160V 0.7A 3NP
Packaging: Tape & Reel (TR)
Package / Case: TO-226-3, TO-92-3 (TO-226AA) Formed Leads
Mounting Type: Through Hole
Supplier Device Package: 3-NP
Part Status: Obsolete
Description: TRANS NPN 160V 0.7A 3NP
Packaging: Tape & Reel (TR)
Package / Case: TO-226-3, TO-92-3 (TO-226AA) Formed Leads
Mounting Type: Through Hole
Supplier Device Package: 3-NP
Part Status: Obsolete
товар відсутній
2SC3646S-P-TD-E |
Виробник: onsemi
Description: TRANS NPN 100V 1A
Packaging: Tape & Reel (TR)
Package / Case: TO-243AA
Mounting Type: Surface Mount
Transistor Type: NPN
Vce Saturation (Max) @ Ib, Ic: 400mV @ 40mA, 400mA
Current - Collector Cutoff (Max): 100nA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce: 140 @ 100mA, 5V
Frequency - Transition: 120MHz
Supplier Device Package: PCP
Current - Collector (Ic) (Max): 1 A
Voltage - Collector Emitter Breakdown (Max): 100 V
Power - Max: 500 mW
Description: TRANS NPN 100V 1A
Packaging: Tape & Reel (TR)
Package / Case: TO-243AA
Mounting Type: Surface Mount
Transistor Type: NPN
Vce Saturation (Max) @ Ib, Ic: 400mV @ 40mA, 400mA
Current - Collector Cutoff (Max): 100nA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce: 140 @ 100mA, 5V
Frequency - Transition: 120MHz
Supplier Device Package: PCP
Current - Collector (Ic) (Max): 1 A
Voltage - Collector Emitter Breakdown (Max): 100 V
Power - Max: 500 mW
товар відсутній
2SC4486S-AN |
Виробник: onsemi
Description: TRANS NPN 50V 2A 3NMP
Packaging: Tape & Reel (TR)
Package / Case: SC-71
Mounting Type: Through Hole
Supplier Device Package: 3-NMP
Part Status: Obsolete
Description: TRANS NPN 50V 2A 3NMP
Packaging: Tape & Reel (TR)
Package / Case: SC-71
Mounting Type: Through Hole
Supplier Device Package: 3-NMP
Part Status: Obsolete
товар відсутній
2SC4486T-AN |
Виробник: onsemi
Description: TRANS NPN 50V 2A 3NMP
Packaging: Tape & Reel (TR)
Package / Case: SC-71
Mounting Type: Through Hole
Supplier Device Package: 3-NMP
Part Status: Obsolete
Description: TRANS NPN 50V 2A 3NMP
Packaging: Tape & Reel (TR)
Package / Case: SC-71
Mounting Type: Through Hole
Supplier Device Package: 3-NMP
Part Status: Obsolete
товар відсутній
2SC5414AE |
Виробник: onsemi
Description: TRANS NPN 12V 0.1A 3NP
Packaging: Tape & Reel (TR)
Package / Case: TO-226-3, TO-92-3 (TO-226AA)
Mounting Type: Through Hole
Supplier Device Package: 3-NP
Part Status: Obsolete
Description: TRANS NPN 12V 0.1A 3NP
Packaging: Tape & Reel (TR)
Package / Case: TO-226-3, TO-92-3 (TO-226AA)
Mounting Type: Through Hole
Supplier Device Package: 3-NP
Part Status: Obsolete
товар відсутній
2SC5414AE-AA |
Виробник: onsemi
Description: TRANS NPN 12V 0.1A 3NP
Packaging: Tape & Reel (TR)
Package / Case: TO-226-3, TO-92-3 (TO-226AA)
Mounting Type: Through Hole
Supplier Device Package: 3-NP
Part Status: Obsolete
Description: TRANS NPN 12V 0.1A 3NP
Packaging: Tape & Reel (TR)
Package / Case: TO-226-3, TO-92-3 (TO-226AA)
Mounting Type: Through Hole
Supplier Device Package: 3-NP
Part Status: Obsolete
товар відсутній
2SC5414AF |
Виробник: onsemi
Description: TRANS NPN 12V 0.1A 3NP
Packaging: Bag
Package / Case: TO-226-3, TO-92-3 (TO-226AA)
Mounting Type: Through Hole
Supplier Device Package: 3-NP
Part Status: Obsolete
Description: TRANS NPN 12V 0.1A 3NP
Packaging: Bag
Package / Case: TO-226-3, TO-92-3 (TO-226AA)
Mounting Type: Through Hole
Supplier Device Package: 3-NP
Part Status: Obsolete
товар відсутній
2SC5414AF-AA |
Виробник: onsemi
Description: TRANS NPN 12V 0.1A 3NP
Packaging: Tape & Reel (TR)
Package / Case: TO-226-3, TO-92-3 (TO-226AA)
Mounting Type: Through Hole
Supplier Device Package: 3-NP
Part Status: Obsolete
Description: TRANS NPN 12V 0.1A 3NP
Packaging: Tape & Reel (TR)
Package / Case: TO-226-3, TO-92-3 (TO-226AA)
Mounting Type: Through Hole
Supplier Device Package: 3-NP
Part Status: Obsolete
товар відсутній
2SC5415AF-TD-E |
Виробник: onsemi
Description: RF TRANS NPN 12V 6.7GHZ PCP
Packaging: Tape & Reel (TR)
Package / Case: TO-243AA
Mounting Type: Surface Mount
Transistor Type: NPN
Operating Temperature: 150°C (TJ)
Gain: 9dB
Power - Max: 800mW
Current - Collector (Ic) (Max): 100mA
Voltage - Collector Emitter Breakdown (Max): 12V
DC Current Gain (hFE) (Min) @ Ic, Vce: 90 @ 30mA, 5V
Frequency - Transition: 6.7GHz
Noise Figure (dB Typ @ f): 1.1dB @ 1GHz
Supplier Device Package: PCP
Part Status: Obsolete
Description: RF TRANS NPN 12V 6.7GHZ PCP
Packaging: Tape & Reel (TR)
Package / Case: TO-243AA
Mounting Type: Surface Mount
Transistor Type: NPN
Operating Temperature: 150°C (TJ)
Gain: 9dB
Power - Max: 800mW
Current - Collector (Ic) (Max): 100mA
Voltage - Collector Emitter Breakdown (Max): 12V
DC Current Gain (hFE) (Min) @ Ic, Vce: 90 @ 30mA, 5V
Frequency - Transition: 6.7GHz
Noise Figure (dB Typ @ f): 1.1dB @ 1GHz
Supplier Device Package: PCP
Part Status: Obsolete
товар відсутній
2SC5488-TL-E |
Виробник: onsemi
Description: TRANS NPN 10V 0.07A 3SSFP
Packaging: Tape & Reel (TR)
Package / Case: SOT-623F
Mounting Type: Surface Mount
Supplier Device Package: 3-SSFP
Part Status: Obsolete
Description: TRANS NPN 10V 0.07A 3SSFP
Packaging: Tape & Reel (TR)
Package / Case: SOT-623F
Mounting Type: Surface Mount
Supplier Device Package: 3-SSFP
Part Status: Obsolete
товар відсутній