| Фото | Назва | Виробник | Інформація |
Доступність |
Ціна |
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NCP4355BDR2G | onsemi |
Description: IC PFC CTRLR SEC SIDE 8SOICPackaging: Cut Tape (CT) Package / Case: 8-SOIC (0.154", 3.90mm Width) Mounting Type: Surface Mount Operating Temperature: 0°C ~ 125°C Voltage - Supply: 3.5V ~ 36V Applications: Secondary-Side Controller Supplier Device Package: 8-SOIC Current - Supply: 107 µA DigiKey Programmable: Not Verified |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||||||||||
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FDPC8012S | onsemi |
Description: MOSFET 2N-CH 25V 13A PWRCLIP-33Packaging: Tape & Reel (TR) Package / Case: 8-PowerWDFN Mounting Type: Surface Mount Configuration: 2 N-Channel (Dual) Asymmetrical Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) Power - Max: 800mW, 900mW Drain to Source Voltage (Vdss): 25V Current - Continuous Drain (Id) @ 25°C: 13A, 26A Input Capacitance (Ciss) (Max) @ Vds: 1075pF @ 13V Rds On (Max) @ Id, Vgs: 7mOhm @ 12A, 4.5V Gate Charge (Qg) (Max) @ Vgs: 8nC @ 4.5V FET Feature: Logic Level Gate Vgs(th) (Max) @ Id: 2.2V @ 250µA Supplier Device Package: Powerclip-33 Part Status: Active |
на замовлення 30000 шт: термін постачання 21-31 дні (днів) |
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6N137SDVM | onsemi |
Description: OPTOISOLTR 5KV OPEN COLL 8-SMDPackaging: Tape & Reel (TR) Package / Case: 8-SMD, Gull Wing Output Type: Open Collector Mounting Type: Surface Mount Operating Temperature: -40°C ~ 100°C Voltage - Supply: 4.5V ~ 5.5V Voltage - Forward (Vf) (Typ): 1.45V Data Rate: 10Mbps Input Type: DC Voltage - Isolation: 5000Vrms Current - DC Forward (If) (Max): 50mA Inputs - Side 1/Side 2: 1/0 Supplier Device Package: 8-SMD Rise / Fall Time (Typ): 30ns, 10ns Common Mode Transient Immunity (Min): 10kV/µs (Typ) Propagation Delay tpLH / tpHL (Max): 75ns, 75ns Part Status: Active Number of Channels: 1 Current - Output / Channel: 50 mA |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||||||||||
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FAN3180TSX | onsemi |
Description: IC GATE DRVR LOW-SIDE SOT23-5Packaging: Tape & Reel (TR) Package / Case: SC-74A, SOT-753 Mounting Type: Surface Mount Operating Temperature: -40°C ~ 125°C (TJ) Voltage - Supply: 5V ~ 18V Input Type: Non-Inverting Supplier Device Package: SOT-23-5 Rise / Fall Time (Typ): 19ns, 13ns Channel Type: Single Driven Configuration: Low-Side Number of Drivers: 1 Gate Type: MOSFET (N-Channel) Logic Voltage - VIL, VIH: 0.8V, 2V Current - Peak Output (Source, Sink): 2.5A, 2.8A Part Status: Active DigiKey Programmable: Not Verified |
на замовлення 6000 шт: термін постачання 21-31 дні (днів) |
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FDMB2308PZ | onsemi |
Description: MOSFET 2P-CH 6MLPPackaging: Tape & Reel (TR) Package / Case: 6-WDFN Exposed Pad Mounting Type: Surface Mount Configuration: 2 P-Channel (Dual) Common Drain Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) Power - Max: 800mW Input Capacitance (Ciss) (Max) @ Vds: 3030pF @ 10V Rds On (Max) @ Id, Vgs: 36mOhm @ 5.7A, 4.5V Gate Charge (Qg) (Max) @ Vgs: 30nC @ 10V FET Feature: Logic Level Gate Vgs(th) (Max) @ Id: 1.5V @ 250µA Supplier Device Package: 6-MLP (2x3) Part Status: Active |
на замовлення 6000 шт: термін постачання 21-31 дні (днів) |
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FDMS86152 | onsemi |
Description: MOSFET N-CH 100V 14A/45A POWER56Packaging: Tape & Reel (TR) Package / Case: 8-PowerTDFN Mounting Type: Surface Mount Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 14A (Ta), 45A (Tc) Rds On (Max) @ Id, Vgs: 6mOhm @ 14A, 10V Power Dissipation (Max): 2.7W (Ta), 125W (Tc) Vgs(th) (Max) @ Id: 4V @ 250µA Supplier Device Package: 8-PQFN (5x6) Part Status: Active Drive Voltage (Max Rds On, Min Rds On): 6V, 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 100 V Gate Charge (Qg) (Max) @ Vgs: 50 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 3370 pF @ 50 V |
на замовлення 12000 шт: термін постачання 21-31 дні (днів) |
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FSL306LRN | onsemi |
Description: IC OFFLINE SWITCH MULT TOP 7DIPPackaging: Tube Package / Case: 8-DIP (0.300", 7.62mm), 7 Leads Mounting Type: Through Hole Operating Temperature: -40°C ~ 125°C (TJ) Frequency - Switching: 50kHz Internal Switch(s): Yes Voltage - Breakdown: 650V Output Isolation: Non-Isolated Topology: Buck, Flyback Voltage - Supply (Vcc/Vdd): 7V ~ 26V Supplier Device Package: 7-DIP Fault Protection: Current Limiting, Open Loop, Over Load, Over Temperature, Over Voltage Voltage - Start Up: 8 V Part Status: Active Power (Watts): 7 W |
на замовлення 1518 шт: термін постачання 21-31 дні (днів) |
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FAN3240TMX | onsemi |
Description: IC PWR DRIVER N-CHAN 1:1 8SOICPackaging: Tape & Reel (TR) Package / Case: 8-SOIC (0.154", 3.90mm Width) Output Type: N-Channel Mounting Type: Surface Mount Number of Outputs: 2 Interface: On/Off Switch Type: Latched Driver Operating Temperature: -40°C ~ 105°C (TA) Output Configuration: Low Side Rds On (Typ): 1Ohm Input Type: Non-Inverting Voltage - Load: 8V ~ 60V Voltage - Supply (Vcc/Vdd): Not Required Ratio - Input:Output: 1:1 Supplier Device Package: 8-SOIC Fault Protection: Over Temperature, UVLO |
на замовлення 45000 шт: термін постачання 21-31 дні (днів) |
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FAN3241TMX | onsemi |
Description: IC PWR DRIVER N-CHAN 1:1 8SOICPackaging: Tape & Reel (TR) Package / Case: 8-SOIC (0.154", 3.90mm Width) Output Type: N-Channel Mounting Type: Surface Mount Number of Outputs: 2 Interface: On/Off Switch Type: Latched Driver Operating Temperature: -40°C ~ 105°C (TA) Output Configuration: Low Side Rds On (Typ): 1Ohm Input Type: Non-Inverting Voltage - Load: 8V ~ 60V Voltage - Supply (Vcc/Vdd): Not Required Ratio - Input:Output: 1:1 Supplier Device Package: 8-SOIC Fault Protection: Over Temperature, UVLO Part Status: Active |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||||||||||
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FDB9406-F085 | onsemi |
Description: MOSFET N-CH 40V 110A D2PAKPackaging: Cut Tape (CT) Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB Mounting Type: Surface Mount Operating Temperature: -55°C ~ 175°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 110A (Tc) Rds On (Max) @ Id, Vgs: 1.8mOhm @ 80A, 10V Power Dissipation (Max): 176W (Tj) Vgs(th) (Max) @ Id: 4V @ 250µA Supplier Device Package: TO-263 (D2Pak) Grade: Automotive Part Status: Active Drive Voltage (Max Rds On, Min Rds On): 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 40 V Gate Charge (Qg) (Max) @ Vgs: 138 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 7710 pF @ 25 V Qualification: AEC-Q101 |
на замовлення 536 шт: термін постачання 21-31 дні (днів) |
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FAN53541UCX | onsemi |
Description: IC REG BUCK ADJ 5A 20WLCSP |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||||||||||
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FCH072N60F | onsemi |
Description: MOSFET N-CH 600V 52A TO247-3Packaging: Tube Package / Case: TO-247-3 Mounting Type: Through Hole Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 52A (Tc) Rds On (Max) @ Id, Vgs: 72mOhm @ 26A, 10V Power Dissipation (Max): 481W (Tc) Vgs(th) (Max) @ Id: 5V @ 250µA Supplier Device Package: TO-247-3 Part Status: Not For New Designs Drive Voltage (Max Rds On, Min Rds On): 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 600 V Gate Charge (Qg) (Max) @ Vgs: 215 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 8660 pF @ 100 V |
на замовлення 28107 шт: термін постачання 21-31 дні (днів) |
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FDMS3669S | onsemi |
Description: MOSFET 2N-CH 30V 13A/18A POWER56Packaging: Tape & Reel (TR) Package / Case: 8-PowerTDFN Mounting Type: Surface Mount Configuration: 2 N-Channel (Dual) Asymmetrical Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) Power - Max: 1W Drain to Source Voltage (Vdss): 30V Current - Continuous Drain (Id) @ 25°C: 13A, 18A Input Capacitance (Ciss) (Max) @ Vds: 1605pF @ 15V Rds On (Max) @ Id, Vgs: 10mOhm @ 13A, 10V Gate Charge (Qg) (Max) @ Vgs: 24nC @ 10V FET Feature: Logic Level Gate Vgs(th) (Max) @ Id: 2.7V @ 250µA Supplier Device Package: Power56 |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||||||||||
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FDN537N | onsemi |
Description: MOSFET N-CH 30V 6.5A SUPERSOT3Packaging: Tape & Reel (TR) Package / Case: TO-236-3, SC-59, SOT-23-3 Mounting Type: Surface Mount Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 6.5A (Ta), 6.5A (Tc) Rds On (Max) @ Id, Vgs: 23mOhm @ 6.5A, 10V Power Dissipation (Max): 1.5W (Ta) Vgs(th) (Max) @ Id: 3V @ 250µA Supplier Device Package: SOT-23-3 Part Status: Active Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 30 V Gate Charge (Qg) (Max) @ Vgs: 8.4 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 465 pF @ 15 V |
на замовлення 60000 шт: термін постачання 21-31 дні (днів) |
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FDB9406-F085 | onsemi |
Description: MOSFET N-CH 40V 110A D2PAKPackaging: Tape & Reel (TR) Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB Mounting Type: Surface Mount Operating Temperature: -55°C ~ 175°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 110A (Tc) Rds On (Max) @ Id, Vgs: 1.8mOhm @ 80A, 10V Power Dissipation (Max): 176W (Tj) Vgs(th) (Max) @ Id: 4V @ 250µA Supplier Device Package: TO-263 (D2Pak) Grade: Automotive Part Status: Active Drive Voltage (Max Rds On, Min Rds On): 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 40 V Gate Charge (Qg) (Max) @ Vgs: 138 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 7710 pF @ 25 V Qualification: AEC-Q101 |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||||||||||
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FAN53541UCX | onsemi |
Description: IC REG BUCK ADJ 5A 20WLCSP |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||||||||||
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FDMS3669S | onsemi |
Description: MOSFET 2N-CH 30V 13A/18A POWER56Packaging: Cut Tape (CT) Package / Case: 8-PowerTDFN Mounting Type: Surface Mount Configuration: 2 N-Channel (Dual) Asymmetrical Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) Power - Max: 1W Drain to Source Voltage (Vdss): 30V Current - Continuous Drain (Id) @ 25°C: 13A, 18A Input Capacitance (Ciss) (Max) @ Vds: 1605pF @ 15V Rds On (Max) @ Id, Vgs: 10mOhm @ 13A, 10V Gate Charge (Qg) (Max) @ Vgs: 24nC @ 10V FET Feature: Logic Level Gate Vgs(th) (Max) @ Id: 2.7V @ 250µA Supplier Device Package: Power56 |
на замовлення 6169 шт: термін постачання 21-31 дні (днів) |
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FDN537N | onsemi |
Description: MOSFET N-CH 30V 6.5A SUPERSOT3Packaging: Cut Tape (CT) Package / Case: TO-236-3, SC-59, SOT-23-3 Mounting Type: Surface Mount Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 6.5A (Ta), 6.5A (Tc) Rds On (Max) @ Id, Vgs: 23mOhm @ 6.5A, 10V Power Dissipation (Max): 1.5W (Ta) Vgs(th) (Max) @ Id: 3V @ 250µA Supplier Device Package: SOT-23-3 Part Status: Active Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 30 V Gate Charge (Qg) (Max) @ Vgs: 8.4 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 465 pF @ 15 V |
на замовлення 60133 шт: термін постачання 21-31 дні (днів) |
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FTCO3V455A1 | onsemi |
Description: MOSFET 6N-CH 40V 150A MODULEPackaging: Tube Package / Case: 19-PowerDIP Module Mounting Type: Through Hole Configuration: 6 N-Channel (3-Phase Bridge) Operating Temperature: 175°C (TJ) Technology: MOSFET (Metal Oxide) Power - Max: 115W Drain to Source Voltage (Vdss): 40V Current - Continuous Drain (Id) @ 25°C: 150A Rds On (Max) @ Id, Vgs: 1.66mOhm @ 80A, 10V FET Feature: Logic Level Gate Supplier Device Package: Module |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||||||||||
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FDPC8012S | onsemi |
Description: MOSFET 2N-CH 25V 13A PWRCLIP-33Packaging: Cut Tape (CT) Package / Case: 8-PowerWDFN Mounting Type: Surface Mount Configuration: 2 N-Channel (Dual) Asymmetrical Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) Power - Max: 800mW, 900mW Drain to Source Voltage (Vdss): 25V Current - Continuous Drain (Id) @ 25°C: 13A, 26A Input Capacitance (Ciss) (Max) @ Vds: 1075pF @ 13V Rds On (Max) @ Id, Vgs: 7mOhm @ 12A, 4.5V Gate Charge (Qg) (Max) @ Vgs: 8nC @ 4.5V FET Feature: Logic Level Gate Vgs(th) (Max) @ Id: 2.2V @ 250µA Supplier Device Package: Powerclip-33 Part Status: Active |
на замовлення 30000 шт: термін постачання 21-31 дні (днів) |
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FAN3240TMX | onsemi |
Description: IC PWR DRIVER N-CHAN 1:1 8SOICPackaging: Cut Tape (CT) Package / Case: 8-SOIC (0.154", 3.90mm Width) Output Type: N-Channel Mounting Type: Surface Mount Number of Outputs: 2 Interface: On/Off Switch Type: Latched Driver Operating Temperature: -40°C ~ 105°C (TA) Output Configuration: Low Side Rds On (Typ): 1Ohm Input Type: Non-Inverting Voltage - Load: 8V ~ 60V Voltage - Supply (Vcc/Vdd): Not Required Ratio - Input:Output: 1:1 Supplier Device Package: 8-SOIC Fault Protection: Over Temperature, UVLO |
на замовлення 47216 шт: термін постачання 21-31 дні (днів) |
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FAN3241TMX | onsemi |
Description: IC PWR DRIVER N-CHAN 1:1 8SOICPackaging: Cut Tape (CT) Package / Case: 8-SOIC (0.154", 3.90mm Width) Output Type: N-Channel Mounting Type: Surface Mount Number of Outputs: 2 Interface: On/Off Switch Type: Latched Driver Operating Temperature: -40°C ~ 105°C (TA) Output Configuration: Low Side Rds On (Typ): 1Ohm Input Type: Non-Inverting Voltage - Load: 8V ~ 60V Voltage - Supply (Vcc/Vdd): Not Required Ratio - Input:Output: 1:1 Supplier Device Package: 8-SOIC Fault Protection: Over Temperature, UVLO Part Status: Active |
на замовлення 2485 шт: термін постачання 21-31 дні (днів) |
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NCL30160GEVB | onsemi |
Description: EVAL BOARD FOR NCL30160Features: Dimmable Packaging: Bulk Voltage - Input: 6.3V ~ 40V Contents: Board(s) Current - Output / Channel: 1A Utilized IC / Part: NCL30160 Supplied Contents: Board(s) Outputs and Type: 1 Non-Isolated Output Part Status: Active |
на замовлення 1 шт: термін постачання 21-31 дні (днів) |
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1N4148-T50R | onsemi |
Description: DIODE STANDARD 100V 200MA DO35Packaging: Cut Tape (CT) Package / Case: DO-204AH, DO-35, Axial Mounting Type: Through Hole Speed: Small Signal =< 200mA (Io), Any Speed Reverse Recovery Time (trr): 4 ns Technology: Standard Capacitance @ Vr, F: 4pF @ 0V, 1MHz Current - Average Rectified (Io): 200mA Supplier Device Package: DO-35 Operating Temperature - Junction: -55°C ~ 175°C Part Status: Active Voltage - DC Reverse (Vr) (Max): 100 V Voltage - Forward (Vf) (Max) @ If: 1 V @ 10 mA Current - Reverse Leakage @ Vr: 5 µA @ 75 V |
на замовлення 37120 шт: термін постачання 21-31 дні (днів) |
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4N32SR2M | onsemi |
Description: OPTOISO 4.17KV DARL W/BASE 6-SMDPackaging: Cut Tape (CT) Package / Case: 6-SMD, Gull Wing Output Type: Darlington with Base Mounting Type: Surface Mount Operating Temperature: -40°C ~ 100°C Voltage - Forward (Vf) (Typ): 1.2V Input Type: DC Current - Output / Channel: 150mA Voltage - Isolation: 4170Vrms Current Transfer Ratio (Min): 500% @ 10mA Vce Saturation (Max): 1V Supplier Device Package: 6-SMD Voltage - Output (Max): 30V Turn On / Turn Off Time (Typ): 5µs, 100µs (Max) Part Status: Active Number of Channels: 1 Current - DC Forward (If) (Max): 80 mA |
на замовлення 25 шт: термін постачання 21-31 дні (днів) |
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BC516-D27Z | onsemi |
Description: TRANS PNP DARL 30V 1A TO-92-3Packaging: Cut Tape (CT) Package / Case: TO-226-3, TO-92-3 (TO-226AA) Formed Leads Mounting Type: Through Hole Transistor Type: PNP - Darlington Operating Temperature: -55°C ~ 150°C (TJ) Vce Saturation (Max) @ Ib, Ic: 1V @ 100µA, 100mA Current - Collector Cutoff (Max): 100nA (ICBO) DC Current Gain (hFE) (Min) @ Ic, Vce: 30000 @ 20mA, 2V Frequency - Transition: 200MHz Supplier Device Package: TO-92-3 Part Status: Active Current - Collector (Ic) (Max): 1 A Voltage - Collector Emitter Breakdown (Max): 30 V Power - Max: 625 mW |
на замовлення 5897 шт: термін постачання 21-31 дні (днів) |
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FDD2670 | onsemi |
Description: MOSFET N-CH 200V 3.6A TO252Packaging: Cut Tape (CT) Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63 Mounting Type: Surface Mount Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 3.6A (Ta) Rds On (Max) @ Id, Vgs: 130mOhm @ 3.6A, 10V Power Dissipation (Max): 3.2W (Ta), 70W (Tc) Vgs(th) (Max) @ Id: 4.5V @ 250µA Supplier Device Package: TO-252AA Drive Voltage (Max Rds On, Min Rds On): 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 200 V Gate Charge (Qg) (Max) @ Vgs: 43 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 1228 pF @ 100 V |
на замовлення 1133 шт: термін постачання 21-31 дні (днів) |
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FDD3670 | onsemi |
Description: MOSFET N-CH 100V 34A TO252Packaging: Cut Tape (CT) Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63 Mounting Type: Surface Mount Operating Temperature: -55°C ~ 175°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 34A (Ta) Rds On (Max) @ Id, Vgs: 32mOhm @ 7.3A, 10V Power Dissipation (Max): 3.8W (Ta), 83W (Tc) Vgs(th) (Max) @ Id: 4V @ 250µA Supplier Device Package: TO-252AA Drive Voltage (Max Rds On, Min Rds On): 6V, 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 100 V Gate Charge (Qg) (Max) @ Vgs: 80 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 2490 pF @ 50 V |
на замовлення 1507 шт: термін постачання 21-31 дні (днів) |
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FDD3680 | onsemi |
Description: MOSFET N-CH 100V 25A TO252Packaging: Cut Tape (CT) Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63 Mounting Type: Surface Mount Operating Temperature: -55°C ~ 175°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 25A (Ta) Rds On (Max) @ Id, Vgs: 46mOhm @ 6.1A, 10V Power Dissipation (Max): 68W (Ta) Vgs(th) (Max) @ Id: 4V @ 250µA Supplier Device Package: TO-252AA Part Status: Obsolete Drive Voltage (Max Rds On, Min Rds On): 6V, 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 100 V Gate Charge (Qg) (Max) @ Vgs: 53 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 1735 pF @ 50 V |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||||||||||
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FDD5670 | onsemi |
Description: MOSFET N-CH 60V 52A TO252Packaging: Cut Tape (CT) Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63 Mounting Type: Surface Mount Operating Temperature: -55°C ~ 175°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 52A (Ta) Rds On (Max) @ Id, Vgs: 15mOhm @ 10A, 10V Power Dissipation (Max): 3.8W (Ta), 83W (Tc) Vgs(th) (Max) @ Id: 4V @ 250µA Supplier Device Package: TO-252AA Drive Voltage (Max Rds On, Min Rds On): 6V, 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 60 V Gate Charge (Qg) (Max) @ Vgs: 73 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 2739 pF @ 15 V |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||||||||||
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FDLL485B | onsemi |
Description: DIODE STANDARD 180V 200MA SOD80Packaging: Cut Tape (CT) Package / Case: DO-213AC, MINI-MELF, SOD-80 Mounting Type: Surface Mount Speed: Small Signal =< 200mA (Io), Any Speed Technology: Standard Capacitance @ Vr, F: 6pF @ 0V, 1MHz Current - Average Rectified (Io): 200mA Supplier Device Package: SOD-80 Operating Temperature - Junction: -65°C ~ 200°C Part Status: Active Voltage - DC Reverse (Vr) (Max): 180 V Voltage - Forward (Vf) (Max) @ If: 1 V @ 100 mA Current - Reverse Leakage @ Vr: 25 nA @ 180 V |
на замовлення 2620 шт: термін постачання 21-31 дні (днів) |
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FDMS8090 | onsemi |
Description: MOSFET 2N-CH 100V 10A 8MLPPackaging: Cut Tape (CT) Package / Case: 8-PowerWDFN Mounting Type: Surface Mount Configuration: 2 N-Channel (Dual) Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) Power - Max: 2.2W Drain to Source Voltage (Vdss): 100V Current - Continuous Drain (Id) @ 25°C: 10A Input Capacitance (Ciss) (Max) @ Vds: 1800pF @ 50V Rds On (Max) @ Id, Vgs: 13mOhm @ 10A, 10V Gate Charge (Qg) (Max) @ Vgs: 27nC @ 10V FET Feature: Logic Level Gate Vgs(th) (Max) @ Id: 4V @ 250µA Supplier Device Package: 8-MLP (5x6), Power56 |
на замовлення 2601 шт: термін постачання 21-31 дні (днів) |
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FDS3512 | onsemi |
Description: MOSFET N-CH 80V 4A 8SOICPackaging: Cut Tape (CT) Package / Case: 8-SOIC (0.154", 3.90mm Width) Mounting Type: Surface Mount Operating Temperature: -55°C ~ 175°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 4A (Ta) Rds On (Max) @ Id, Vgs: 70mOhm @ 4A, 10V Power Dissipation (Max): 2.5W (Ta) Vgs(th) (Max) @ Id: 4V @ 250µA Supplier Device Package: 8-SOIC Part Status: Active Drive Voltage (Max Rds On, Min Rds On): 6V, 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 80 V Gate Charge (Qg) (Max) @ Vgs: 18 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 634 pF @ 40 V |
на замовлення 4594 шт: термін постачання 21-31 дні (днів) |
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FJT44KTF | onsemi |
Description: TRANS NPN 400V 0.3A SOT-223-4Packaging: Cut Tape (CT) Package / Case: TO-261-4, TO-261AA Mounting Type: Surface Mount Transistor Type: NPN Operating Temperature: 150°C (TJ) Vce Saturation (Max) @ Ib, Ic: 750mV @ 5mA, 50mA Current - Collector Cutoff (Max): 500nA DC Current Gain (hFE) (Min) @ Ic, Vce: 50 @ 10mA, 10V Supplier Device Package: SOT-223-4 Part Status: Active Current - Collector (Ic) (Max): 300 mA Voltage - Collector Emitter Breakdown (Max): 400 V Power - Max: 2 W |
на замовлення 8948 шт: термін постачання 21-31 дні (днів) |
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FJV992FMTF | onsemi |
Description: TRANS PNP 120V 0.05A SOT-23-3Packaging: Cut Tape (CT) Package / Case: TO-236-3, SC-59, SOT-23-3 Mounting Type: Surface Mount Transistor Type: PNP Operating Temperature: 150°C (TJ) Vce Saturation (Max) @ Ib, Ic: 300mV @ 1mA, 10mA DC Current Gain (hFE) (Min) @ Ic, Vce: 300 @ 1mA, 6V Frequency - Transition: 50MHz Supplier Device Package: SOT-23-3 Current - Collector (Ic) (Max): 50 mA Voltage - Collector Emitter Breakdown (Max): 120 V Power - Max: 300 mW |
на замовлення 92907 шт: термін постачання 21-31 дні (днів) |
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FMB100 | onsemi |
Description: TRANS NPN 45V 0.5A SSOT-6 |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||||||||||
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FQD2N90TM | onsemi |
Description: MOSFET N-CH 900V 1.7A DPAKPackaging: Cut Tape (CT) Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63 Mounting Type: Surface Mount Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 1.7A (Tc) Rds On (Max) @ Id, Vgs: 7.2Ohm @ 850mA, 10V Power Dissipation (Max): 2.5W (Ta), 50W (Tc) Vgs(th) (Max) @ Id: 5V @ 250µA Supplier Device Package: TO-252AA Part Status: Active Drive Voltage (Max Rds On, Min Rds On): 10V Vgs (Max): ±30V Drain to Source Voltage (Vdss): 900 V Gate Charge (Qg) (Max) @ Vgs: 15 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 500 pF @ 25 V |
на замовлення 2929 шт: термін постачання 21-31 дні (днів) |
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FQD5N20LTM | onsemi |
Description: MOSFET N-CH 200V 3.8A DPAKPackaging: Cut Tape (CT) Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63 Mounting Type: Surface Mount Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 3.8A (Tc) Rds On (Max) @ Id, Vgs: 1.2Ohm @ 1.9A, 10V Power Dissipation (Max): 2.5W (Ta), 37W (Tc) Vgs(th) (Max) @ Id: 2V @ 250µA Supplier Device Package: TO-252AA Drive Voltage (Max Rds On, Min Rds On): 5V, 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 200 V Gate Charge (Qg) (Max) @ Vgs: 6.2 nC @ 5 V Input Capacitance (Ciss) (Max) @ Vds: 325 pF @ 25 V |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||||||||||
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FSA2267AL10X | onsemi |
Description: IC SWITCH DUAL SPDT 10MICROPAK Packaging: Cut Tape (CT) Package / Case: 10-UFQFN Exposed Pad Mounting Type: Surface Mount Operating Temperature: -40°C ~ 85°C (TA) Applications: Audio On-State Resistance (Max): 350mOhm (Typ) -3db Bandwidth: 45MHz Supplier Device Package: 10-MicroPak™ Voltage - Supply, Single (V+): 2.3V ~ 4.3V Switch Circuit: SPDT Multiplexer/Demultiplexer Circuit: 2:1 Number of Channels: 2 |
на замовлення 1623 шт: термін постачання 21-31 дні (днів) |
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FSA66P5X | onsemi |
Description: IC SWITCH SPST-NO X 1 SC70-5Packaging: Cut Tape (CT) Package / Case: 5-TSSOP, SC-70-5, SOT-353 Mounting Type: Surface Mount Operating Temperature: -40°C ~ 85°C (TA) -3db Bandwidth: 250MHz Supplier Device Package: SC-70-5 Voltage - Supply, Single (V+): 1.65V ~ 5.5V Charge Injection: 0.05pC Switch Circuit: SPST - NO Multiplexer/Demultiplexer Circuit: 1:1 Channel Capacitance (CS(off), CD(off)): 6pF Number of Circuits: 1 |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||||||||||
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FSB649 | onsemi |
Description: TRANS NPN 25V 3A SOT-23-3Packaging: Cut Tape (CT) Package / Case: TO-236-3, SC-59, SOT-23-3 Mounting Type: Surface Mount Transistor Type: NPN Operating Temperature: -55°C ~ 150°C (TJ) Vce Saturation (Max) @ Ib, Ic: 600mV @ 300mA, 3A Current - Collector Cutoff (Max): 100nA (ICBO) DC Current Gain (hFE) (Min) @ Ic, Vce: 100 @ 1A, 2V Frequency - Transition: 150MHz Supplier Device Package: SOT-23-3 Part Status: Active Current - Collector (Ic) (Max): 3 A Voltage - Collector Emitter Breakdown (Max): 25 V Power - Max: 500 mW |
на замовлення 2733 шт: термін постачання 21-31 дні (днів) |
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HCPL0701R2 | onsemi |
Description: OPTOISO 2.5KV DARL W/BASE 8-SOICPackaging: Cut Tape (CT) Package / Case: 8-SOIC (0.154", 3.90mm Width) Output Type: Darlington with Base Mounting Type: Surface Mount Operating Temperature: -40°C ~ 85°C Voltage - Forward (Vf) (Typ): 1.25V Input Type: DC Current - Output / Channel: 60mA Voltage - Isolation: 2500Vrms Current Transfer Ratio (Min): 500% @ 1.6mA Current Transfer Ratio (Max): 2600% @ 1.6mA Supplier Device Package: 8-SOIC Voltage - Output (Max): 18V Turn On / Turn Off Time (Typ): 300ns, 1.6µs Part Status: Active Number of Channels: 1 Current - DC Forward (If) (Max): 20 mA |
на замовлення 2203 шт: термін постачання 21-31 дні (днів) |
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HGTD1N120BNS9A | onsemi |
Description: IGBT NPT 1200V 5.3A TO-252AAPackaging: Cut Tape (CT) Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63 Mounting Type: Surface Mount Operating Temperature: -55°C ~ 150°C (TJ) Input Type: Standard Vce(on) (Max) @ Vge, Ic: 2.9V @ 15V, 1A Supplier Device Package: TO-252AA IGBT Type: NPT Td (on/off) @ 25°C: 15ns/67ns Switching Energy: 70µJ (on), 90µJ (off) Test Condition: 960V, 1A, 82Ohm, 15V Gate Charge: 14 nC Part Status: Active Current - Collector (Ic) (Max): 5.3 A Voltage - Collector Emitter Breakdown (Max): 1200 V Current - Collector Pulsed (Icm): 6 A Power - Max: 60 W |
на замовлення 18556 шт: термін постачання 21-31 дні (днів) |
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KA431SLMF2TF | onsemi |
Description: IC VREF SHUNT ADJ 0.5% SOT23F-3Tolerance: ±0.5% Packaging: Cut Tape (CT) Package / Case: SOT-23-3 Flat Leads Temperature Coefficient: 50ppm/°C Typical Output Type: Adjustable Mounting Type: Surface Mount Reference Type: Shunt Operating Temperature: -25°C ~ 85°C (TA) Supplier Device Package: SOT-23F-3 Voltage - Output (Min/Fixed): 2.495V Part Status: Active Current - Cathode: 1 mA Current - Output: 100 mA Voltage - Output (Max): 36 V |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||||||||||
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KA431SLMFTF | onsemi |
Description: IC VREF SHUNT ADJ 0.5% SOT23F-3Tolerance: ±0.5% Packaging: Cut Tape (CT) Package / Case: SOT-23-3 Flat Leads Temperature Coefficient: 50ppm/°C Typical Output Type: Adjustable Mounting Type: Surface Mount Reference Type: Shunt Operating Temperature: -25°C ~ 85°C (TA) Supplier Device Package: SOT-23F-3 Voltage - Output (Min/Fixed): 2.495V Part Status: Active Current - Cathode: 1 mA Current - Output: 100 mA Voltage - Output (Max): 36 V |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||||||||||
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KSB834WYTM | onsemi |
Description: TRANS PNP 60V 3A D2PAKPackaging: Cut Tape (CT) Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB Mounting Type: Surface Mount Transistor Type: PNP Operating Temperature: 150°C (TJ) Vce Saturation (Max) @ Ib, Ic: 1V @ 300mA, 3A Current - Collector Cutoff (Max): 100µA (ICBO) DC Current Gain (hFE) (Min) @ Ic, Vce: 100 @ 5mA, 5V Frequency - Transition: 9MHz Supplier Device Package: TO-263 (D2Pak) Part Status: Active Current - Collector (Ic) (Max): 3 A Voltage - Collector Emitter Breakdown (Max): 60 V Power - Max: 1.5 W |
на замовлення 809 шт: термін постачання 21-31 дні (днів) |
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KST5550MTF | onsemi |
Description: TRANS NPN 140V 0.6A SOT-23-3Packaging: Cut Tape (CT) Package / Case: TO-236-3, SC-59, SOT-23-3 Mounting Type: Surface Mount Transistor Type: NPN Vce Saturation (Max) @ Ib, Ic: 250mV @ 5mA, 50mA Current - Collector Cutoff (Max): 100nA (ICBO) DC Current Gain (hFE) (Min) @ Ic, Vce: 60 @ 10mA, 5V Frequency - Transition: 300MHz Supplier Device Package: SOT-23-3 Part Status: Obsolete Current - Collector (Ic) (Max): 600 mA Voltage - Collector Emitter Breakdown (Max): 140 V Power - Max: 350 mW |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||||||||||
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MMBD2838 | onsemi |
Description: DIODE ARRAY GP 75V 200MA SOT23-3Packaging: Cut Tape (CT) Package / Case: TO-236-3, SC-59, SOT-23-3 Mounting Type: Surface Mount Speed: Small Signal =< 200mA (Io), Any Speed Reverse Recovery Time (trr): 4 ns Technology: Standard Diode Configuration: 1 Pair Common Cathode Current - Average Rectified (Io) (per Diode): 200mA Supplier Device Package: SOT-23-3 Operating Temperature - Junction: -55°C ~ 150°C Voltage - DC Reverse (Vr) (Max): 75 V Voltage - Forward (Vf) (Max) @ If: 1.2 V @ 100 mA Current - Reverse Leakage @ Vr: 100 nA @ 50 V |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||||||||||
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MMBT5962 | onsemi |
Description: TRANS NPN 45V 0.1A SOT23-3Packaging: Cut Tape (CT) Package / Case: TO-236-3, SC-59, SOT-23-3 Mounting Type: Surface Mount Transistor Type: NPN Operating Temperature: -55°C ~ 150°C (TJ) Vce Saturation (Max) @ Ib, Ic: 200mV @ 500µA, 10mA Current - Collector Cutoff (Max): 2nA (ICBO) DC Current Gain (hFE) (Min) @ Ic, Vce: 600 @ 10mA, 5V Supplier Device Package: SOT-23-3 Current - Collector (Ic) (Max): 100 mA Voltage - Collector Emitter Breakdown (Max): 45 V Power - Max: 350 mW |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||||||||||
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MMSZ4688 | onsemi |
Description: DIODE ZENER 4.7V 500MW SOD123 Tolerance: ±5% Packaging: Cut Tape (CT) Package / Case: SOD-123 Mounting Type: Surface Mount Operating Temperature: -55°C ~ 150°C Voltage - Zener (Nom) (Vz): 4.7 V Supplier Device Package: SOD-123 Part Status: Obsolete Power - Max: 500 mW Voltage - Forward (Vf) (Max) @ If: 900 mV @ 10 mA Current - Reverse Leakage @ Vr: 10 µA @ 3 V |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||||||||||
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MMSZ5243B | onsemi |
Description: DIODE ZENER 13V 500MW SOD123Tolerance: ±5% Packaging: Cut Tape (CT) Package / Case: SOD-123 Mounting Type: Surface Mount Operating Temperature: -55°C ~ 150°C Voltage - Zener (Nom) (Vz): 13 V Impedance (Max) (Zzt): 13 Ohms Supplier Device Package: SOD-123 Power - Max: 500 mW Voltage - Forward (Vf) (Max) @ If: 900 mV @ 10 mA Current - Reverse Leakage @ Vr: 500 nA @ 9.9 V |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||||||||||
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NC7S08P5 | onsemi |
Description: IC GATE AND 1CH 2-INP SC70-5Packaging: Cut Tape (CT) Package / Case: 5-TSSOP, SC-70-5, SOT-353 Mounting Type: Surface Mount Logic Type: AND Gate Operating Temperature: -40°C ~ 85°C Voltage - Supply: 2V ~ 6V Current - Output High, Low: 2.6mA, 2.6mA Number of Inputs: 2 Supplier Device Package: SC-70-5 Input Logic Level - High: 1.5V Input Logic Level - Low: 0.5V Max Propagation Delay @ V, Max CL: 17ns @ 6V, 50pF Number of Circuits: 1 Current - Quiescent (Max): 1 µA |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||||||||||
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NC7S32L6X | onsemi |
Description: IC GATE OR 1CH 2-INP 6MICROPAKPackaging: Cut Tape (CT) Package / Case: 6-UFDFN Mounting Type: Surface Mount Logic Type: OR Gate Operating Temperature: -40°C ~ 85°C Voltage - Supply: 2V ~ 6V Current - Output High, Low: 2.6mA, 2.6mA Number of Inputs: 2 Supplier Device Package: 6-MicroPak Input Logic Level - High: 1.5V Input Logic Level - Low: 0.5V Max Propagation Delay @ V, Max CL: 17ns @ 6V, 50pF Part Status: Obsolete Number of Circuits: 1 Current - Quiescent (Max): 1 µA |
на замовлення 95000 шт: термін постачання 21-31 дні (днів) |
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NC7SZ04L6X | onsemi |
Description: IC INVERTER 1CH 1-INP 6MICROPAKPackaging: Cut Tape (CT) Package / Case: 6-UFDFN Mounting Type: Surface Mount Logic Type: Inverter Operating Temperature: -40°C ~ 85°C Voltage - Supply: 1.65V ~ 5.5V Current - Output High, Low: 32mA, 32mA Number of Inputs: 1 Supplier Device Package: 6-MicroPak Max Propagation Delay @ V, Max CL: 4.3ns @ 5V, 50pF Number of Circuits: 1 Current - Quiescent (Max): 2 µA |
на замовлення 261232 шт: термін постачання 21-31 дні (днів) |
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NC7SZ332L6X | onsemi |
Description: IC GATE OR 1CH 3-INP 6MICROPAKPackaging: Cut Tape (CT) Package / Case: 6-UFDFN Mounting Type: Surface Mount Logic Type: OR Gate Operating Temperature: -40°C ~ 85°C Voltage - Supply: 1.65V ~ 5.5V Current - Output High, Low: 32mA, 32mA Number of Inputs: 3 Supplier Device Package: 6-MicroPak Max Propagation Delay @ V, Max CL: 7ns @ 5V, 50pF Number of Circuits: 1 Current - Quiescent (Max): 2 µA |
на замовлення 10000 шт: термін постачання 21-31 дні (днів) |
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NZT44H8 | onsemi |
Description: TRANS NPN 60V 8A SOT223-4Packaging: Cut Tape (CT) Package / Case: TO-261-4, TO-261AA Mounting Type: Surface Mount Transistor Type: NPN Operating Temperature: -55°C ~ 150°C (TJ) Vce Saturation (Max) @ Ib, Ic: 1V @ 400mA, 8A Current - Collector Cutoff (Max): 10µA (ICBO) DC Current Gain (hFE) (Min) @ Ic, Vce: 40 @ 4A, 1V Frequency - Transition: 50MHz Supplier Device Package: SOT-223-4 Part Status: Obsolete Current - Collector (Ic) (Max): 8 A Voltage - Collector Emitter Breakdown (Max): 60 V Power - Max: 1.5 W |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||||||||||
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NZT45H8 | onsemi |
Description: TRANS PNP 60V 8A SOT223-4Packaging: Cut Tape (CT) Package / Case: TO-261-4, TO-261AA Mounting Type: Surface Mount Transistor Type: PNP Operating Temperature: -55°C ~ 150°C (TJ) Vce Saturation (Max) @ Ib, Ic: 1V @ 400mA, 8A Current - Collector Cutoff (Max): 10µA (ICBO) DC Current Gain (hFE) (Min) @ Ic, Vce: 40 @ 4A, 1V Frequency - Transition: 40MHz Supplier Device Package: SOT-223-4 Part Status: Obsolete Current - Collector (Ic) (Max): 8 A Voltage - Collector Emitter Breakdown (Max): 60 V Power - Max: 1.5 W |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||||||||||
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NZT605 | onsemi |
Description: TRANS NPN DARL 110V 1.5A SOT-223Packaging: Cut Tape (CT) Package / Case: TO-261-4, TO-261AA Mounting Type: Surface Mount Transistor Type: NPN - Darlington Operating Temperature: -55°C ~ 150°C (TJ) Vce Saturation (Max) @ Ib, Ic: 1.5V @ 1mA, 1A Current - Collector Cutoff (Max): 10nA (ICBO) DC Current Gain (hFE) (Min) @ Ic, Vce: 2000 @ 1A, 5V Frequency - Transition: 150MHz Supplier Device Package: SOT-223-4 Current - Collector (Ic) (Max): 1.5 A Voltage - Collector Emitter Breakdown (Max): 110 V Power - Max: 1 W |
на замовлення 14397 шт: термін постачання 21-31 дні (днів) |
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6N136SDM | onsemi |
Description: OPTOISO 5KV TRANS W/BASE 8-SMDPackaging: Cut Tape (CT) Package / Case: 8-SMD, Gull Wing Output Type: Transistor with Base Mounting Type: Surface Mount Operating Temperature: -40°C ~ 100°C Voltage - Forward (Vf) (Typ): 1.45V Input Type: DC Current - Output / Channel: 8mA Voltage - Isolation: 5000Vrms Current Transfer Ratio (Min): 19% @ 16mA Current Transfer Ratio (Max): 50% @ 16mA Supplier Device Package: 8-SMD Voltage - Output (Max): 20V Turn On / Turn Off Time (Typ): 250ns, 260ns Part Status: Active Number of Channels: 1 Current - DC Forward (If) (Max): 25 mA |
на замовлення 250375 шт: термін постачання 21-31 дні (днів) |
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FAN3214TMX | onsemi |
Description: IC GATE DRVR LOW-SIDE 8SOICPackaging: Cut Tape (CT) Package / Case: 8-SOIC (0.154", 3.90mm Width) Mounting Type: Surface Mount Operating Temperature: -40°C ~ 125°C (TA) Voltage - Supply: 4.5V ~ 18V Input Type: Non-Inverting Supplier Device Package: 8-SOIC Rise / Fall Time (Typ): 12ns, 9ns Channel Type: Synchronous Driven Configuration: Low-Side Number of Drivers: 2 Gate Type: N-Channel MOSFET Logic Voltage - VIL, VIH: 0.8V, 2V Current - Peak Output (Source, Sink): 5A, 5A Part Status: Active DigiKey Programmable: Not Verified |
на замовлення 300669 шт: термін постачання 21-31 дні (днів) |
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| NCP4355BDR2G |
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Виробник: onsemi
Description: IC PFC CTRLR SEC SIDE 8SOIC
Packaging: Cut Tape (CT)
Package / Case: 8-SOIC (0.154", 3.90mm Width)
Mounting Type: Surface Mount
Operating Temperature: 0°C ~ 125°C
Voltage - Supply: 3.5V ~ 36V
Applications: Secondary-Side Controller
Supplier Device Package: 8-SOIC
Current - Supply: 107 µA
DigiKey Programmable: Not Verified
Description: IC PFC CTRLR SEC SIDE 8SOIC
Packaging: Cut Tape (CT)
Package / Case: 8-SOIC (0.154", 3.90mm Width)
Mounting Type: Surface Mount
Operating Temperature: 0°C ~ 125°C
Voltage - Supply: 3.5V ~ 36V
Applications: Secondary-Side Controller
Supplier Device Package: 8-SOIC
Current - Supply: 107 µA
DigiKey Programmable: Not Verified
товару немає в наявності
В кошику
од. на суму грн.
| FDPC8012S |
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Виробник: onsemi
Description: MOSFET 2N-CH 25V 13A PWRCLIP-33
Packaging: Tape & Reel (TR)
Package / Case: 8-PowerWDFN
Mounting Type: Surface Mount
Configuration: 2 N-Channel (Dual) Asymmetrical
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
Power - Max: 800mW, 900mW
Drain to Source Voltage (Vdss): 25V
Current - Continuous Drain (Id) @ 25°C: 13A, 26A
Input Capacitance (Ciss) (Max) @ Vds: 1075pF @ 13V
Rds On (Max) @ Id, Vgs: 7mOhm @ 12A, 4.5V
Gate Charge (Qg) (Max) @ Vgs: 8nC @ 4.5V
FET Feature: Logic Level Gate
Vgs(th) (Max) @ Id: 2.2V @ 250µA
Supplier Device Package: Powerclip-33
Part Status: Active
Description: MOSFET 2N-CH 25V 13A PWRCLIP-33
Packaging: Tape & Reel (TR)
Package / Case: 8-PowerWDFN
Mounting Type: Surface Mount
Configuration: 2 N-Channel (Dual) Asymmetrical
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
Power - Max: 800mW, 900mW
Drain to Source Voltage (Vdss): 25V
Current - Continuous Drain (Id) @ 25°C: 13A, 26A
Input Capacitance (Ciss) (Max) @ Vds: 1075pF @ 13V
Rds On (Max) @ Id, Vgs: 7mOhm @ 12A, 4.5V
Gate Charge (Qg) (Max) @ Vgs: 8nC @ 4.5V
FET Feature: Logic Level Gate
Vgs(th) (Max) @ Id: 2.2V @ 250µA
Supplier Device Package: Powerclip-33
Part Status: Active
на замовлення 30000 шт:
термін постачання 21-31 дні (днів)| Кількість | Ціна |
|---|---|
| 3000+ | 121.59 грн |
| 6N137SDVM |
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Виробник: onsemi
Description: OPTOISOLTR 5KV OPEN COLL 8-SMD
Packaging: Tape & Reel (TR)
Package / Case: 8-SMD, Gull Wing
Output Type: Open Collector
Mounting Type: Surface Mount
Operating Temperature: -40°C ~ 100°C
Voltage - Supply: 4.5V ~ 5.5V
Voltage - Forward (Vf) (Typ): 1.45V
Data Rate: 10Mbps
Input Type: DC
Voltage - Isolation: 5000Vrms
Current - DC Forward (If) (Max): 50mA
Inputs - Side 1/Side 2: 1/0
Supplier Device Package: 8-SMD
Rise / Fall Time (Typ): 30ns, 10ns
Common Mode Transient Immunity (Min): 10kV/µs (Typ)
Propagation Delay tpLH / tpHL (Max): 75ns, 75ns
Part Status: Active
Number of Channels: 1
Current - Output / Channel: 50 mA
Description: OPTOISOLTR 5KV OPEN COLL 8-SMD
Packaging: Tape & Reel (TR)
Package / Case: 8-SMD, Gull Wing
Output Type: Open Collector
Mounting Type: Surface Mount
Operating Temperature: -40°C ~ 100°C
Voltage - Supply: 4.5V ~ 5.5V
Voltage - Forward (Vf) (Typ): 1.45V
Data Rate: 10Mbps
Input Type: DC
Voltage - Isolation: 5000Vrms
Current - DC Forward (If) (Max): 50mA
Inputs - Side 1/Side 2: 1/0
Supplier Device Package: 8-SMD
Rise / Fall Time (Typ): 30ns, 10ns
Common Mode Transient Immunity (Min): 10kV/µs (Typ)
Propagation Delay tpLH / tpHL (Max): 75ns, 75ns
Part Status: Active
Number of Channels: 1
Current - Output / Channel: 50 mA
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| FAN3180TSX |
![]() |
Виробник: onsemi
Description: IC GATE DRVR LOW-SIDE SOT23-5
Packaging: Tape & Reel (TR)
Package / Case: SC-74A, SOT-753
Mounting Type: Surface Mount
Operating Temperature: -40°C ~ 125°C (TJ)
Voltage - Supply: 5V ~ 18V
Input Type: Non-Inverting
Supplier Device Package: SOT-23-5
Rise / Fall Time (Typ): 19ns, 13ns
Channel Type: Single
Driven Configuration: Low-Side
Number of Drivers: 1
Gate Type: MOSFET (N-Channel)
Logic Voltage - VIL, VIH: 0.8V, 2V
Current - Peak Output (Source, Sink): 2.5A, 2.8A
Part Status: Active
DigiKey Programmable: Not Verified
Description: IC GATE DRVR LOW-SIDE SOT23-5
Packaging: Tape & Reel (TR)
Package / Case: SC-74A, SOT-753
Mounting Type: Surface Mount
Operating Temperature: -40°C ~ 125°C (TJ)
Voltage - Supply: 5V ~ 18V
Input Type: Non-Inverting
Supplier Device Package: SOT-23-5
Rise / Fall Time (Typ): 19ns, 13ns
Channel Type: Single
Driven Configuration: Low-Side
Number of Drivers: 1
Gate Type: MOSFET (N-Channel)
Logic Voltage - VIL, VIH: 0.8V, 2V
Current - Peak Output (Source, Sink): 2.5A, 2.8A
Part Status: Active
DigiKey Programmable: Not Verified
на замовлення 6000 шт:
термін постачання 21-31 дні (днів)| Кількість | Ціна |
|---|---|
| 3000+ | 42.65 грн |
| 6000+ | 40.15 грн |
| FDMB2308PZ |
![]() |
Виробник: onsemi
Description: MOSFET 2P-CH 6MLP
Packaging: Tape & Reel (TR)
Package / Case: 6-WDFN Exposed Pad
Mounting Type: Surface Mount
Configuration: 2 P-Channel (Dual) Common Drain
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
Power - Max: 800mW
Input Capacitance (Ciss) (Max) @ Vds: 3030pF @ 10V
Rds On (Max) @ Id, Vgs: 36mOhm @ 5.7A, 4.5V
Gate Charge (Qg) (Max) @ Vgs: 30nC @ 10V
FET Feature: Logic Level Gate
Vgs(th) (Max) @ Id: 1.5V @ 250µA
Supplier Device Package: 6-MLP (2x3)
Part Status: Active
Description: MOSFET 2P-CH 6MLP
Packaging: Tape & Reel (TR)
Package / Case: 6-WDFN Exposed Pad
Mounting Type: Surface Mount
Configuration: 2 P-Channel (Dual) Common Drain
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
Power - Max: 800mW
Input Capacitance (Ciss) (Max) @ Vds: 3030pF @ 10V
Rds On (Max) @ Id, Vgs: 36mOhm @ 5.7A, 4.5V
Gate Charge (Qg) (Max) @ Vgs: 30nC @ 10V
FET Feature: Logic Level Gate
Vgs(th) (Max) @ Id: 1.5V @ 250µA
Supplier Device Package: 6-MLP (2x3)
Part Status: Active
на замовлення 6000 шт:
термін постачання 21-31 дні (днів)| Кількість | Ціна |
|---|---|
| 3000+ | 68.62 грн |
| FDMS86152 |
![]() |
Виробник: onsemi
Description: MOSFET N-CH 100V 14A/45A POWER56
Packaging: Tape & Reel (TR)
Package / Case: 8-PowerTDFN
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 14A (Ta), 45A (Tc)
Rds On (Max) @ Id, Vgs: 6mOhm @ 14A, 10V
Power Dissipation (Max): 2.7W (Ta), 125W (Tc)
Vgs(th) (Max) @ Id: 4V @ 250µA
Supplier Device Package: 8-PQFN (5x6)
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 6V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 100 V
Gate Charge (Qg) (Max) @ Vgs: 50 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 3370 pF @ 50 V
Description: MOSFET N-CH 100V 14A/45A POWER56
Packaging: Tape & Reel (TR)
Package / Case: 8-PowerTDFN
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 14A (Ta), 45A (Tc)
Rds On (Max) @ Id, Vgs: 6mOhm @ 14A, 10V
Power Dissipation (Max): 2.7W (Ta), 125W (Tc)
Vgs(th) (Max) @ Id: 4V @ 250µA
Supplier Device Package: 8-PQFN (5x6)
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 6V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 100 V
Gate Charge (Qg) (Max) @ Vgs: 50 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 3370 pF @ 50 V
на замовлення 12000 шт:
термін постачання 21-31 дні (днів)| Кількість | Ціна |
|---|---|
| 3000+ | 168.08 грн |
| FSL306LRN |
![]() |
Виробник: onsemi
Description: IC OFFLINE SWITCH MULT TOP 7DIP
Packaging: Tube
Package / Case: 8-DIP (0.300", 7.62mm), 7 Leads
Mounting Type: Through Hole
Operating Temperature: -40°C ~ 125°C (TJ)
Frequency - Switching: 50kHz
Internal Switch(s): Yes
Voltage - Breakdown: 650V
Output Isolation: Non-Isolated
Topology: Buck, Flyback
Voltage - Supply (Vcc/Vdd): 7V ~ 26V
Supplier Device Package: 7-DIP
Fault Protection: Current Limiting, Open Loop, Over Load, Over Temperature, Over Voltage
Voltage - Start Up: 8 V
Part Status: Active
Power (Watts): 7 W
Description: IC OFFLINE SWITCH MULT TOP 7DIP
Packaging: Tube
Package / Case: 8-DIP (0.300", 7.62mm), 7 Leads
Mounting Type: Through Hole
Operating Temperature: -40°C ~ 125°C (TJ)
Frequency - Switching: 50kHz
Internal Switch(s): Yes
Voltage - Breakdown: 650V
Output Isolation: Non-Isolated
Topology: Buck, Flyback
Voltage - Supply (Vcc/Vdd): 7V ~ 26V
Supplier Device Package: 7-DIP
Fault Protection: Current Limiting, Open Loop, Over Load, Over Temperature, Over Voltage
Voltage - Start Up: 8 V
Part Status: Active
Power (Watts): 7 W
на замовлення 1518 шт:
термін постачання 21-31 дні (днів)| Кількість | Ціна |
|---|---|
| 2+ | 170.32 грн |
| 10+ | 102.84 грн |
| 50+ | 76.94 грн |
| 100+ | 64.45 грн |
| 250+ | 56.11 грн |
| 500+ | 50.97 грн |
| 1000+ | 45.91 грн |
| FAN3240TMX |
![]() |
Виробник: onsemi
Description: IC PWR DRIVER N-CHAN 1:1 8SOIC
Packaging: Tape & Reel (TR)
Package / Case: 8-SOIC (0.154", 3.90mm Width)
Output Type: N-Channel
Mounting Type: Surface Mount
Number of Outputs: 2
Interface: On/Off
Switch Type: Latched Driver
Operating Temperature: -40°C ~ 105°C (TA)
Output Configuration: Low Side
Rds On (Typ): 1Ohm
Input Type: Non-Inverting
Voltage - Load: 8V ~ 60V
Voltage - Supply (Vcc/Vdd): Not Required
Ratio - Input:Output: 1:1
Supplier Device Package: 8-SOIC
Fault Protection: Over Temperature, UVLO
Description: IC PWR DRIVER N-CHAN 1:1 8SOIC
Packaging: Tape & Reel (TR)
Package / Case: 8-SOIC (0.154", 3.90mm Width)
Output Type: N-Channel
Mounting Type: Surface Mount
Number of Outputs: 2
Interface: On/Off
Switch Type: Latched Driver
Operating Temperature: -40°C ~ 105°C (TA)
Output Configuration: Low Side
Rds On (Typ): 1Ohm
Input Type: Non-Inverting
Voltage - Load: 8V ~ 60V
Voltage - Supply (Vcc/Vdd): Not Required
Ratio - Input:Output: 1:1
Supplier Device Package: 8-SOIC
Fault Protection: Over Temperature, UVLO
на замовлення 45000 шт:
термін постачання 21-31 дні (днів)| Кількість | Ціна |
|---|---|
| 2500+ | 54.09 грн |
| 5000+ | 50.24 грн |
| FAN3241TMX |
![]() |
Виробник: onsemi
Description: IC PWR DRIVER N-CHAN 1:1 8SOIC
Packaging: Tape & Reel (TR)
Package / Case: 8-SOIC (0.154", 3.90mm Width)
Output Type: N-Channel
Mounting Type: Surface Mount
Number of Outputs: 2
Interface: On/Off
Switch Type: Latched Driver
Operating Temperature: -40°C ~ 105°C (TA)
Output Configuration: Low Side
Rds On (Typ): 1Ohm
Input Type: Non-Inverting
Voltage - Load: 8V ~ 60V
Voltage - Supply (Vcc/Vdd): Not Required
Ratio - Input:Output: 1:1
Supplier Device Package: 8-SOIC
Fault Protection: Over Temperature, UVLO
Part Status: Active
Description: IC PWR DRIVER N-CHAN 1:1 8SOIC
Packaging: Tape & Reel (TR)
Package / Case: 8-SOIC (0.154", 3.90mm Width)
Output Type: N-Channel
Mounting Type: Surface Mount
Number of Outputs: 2
Interface: On/Off
Switch Type: Latched Driver
Operating Temperature: -40°C ~ 105°C (TA)
Output Configuration: Low Side
Rds On (Typ): 1Ohm
Input Type: Non-Inverting
Voltage - Load: 8V ~ 60V
Voltage - Supply (Vcc/Vdd): Not Required
Ratio - Input:Output: 1:1
Supplier Device Package: 8-SOIC
Fault Protection: Over Temperature, UVLO
Part Status: Active
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| FDB9406-F085 |
![]() |
Виробник: onsemi
Description: MOSFET N-CH 40V 110A D2PAK
Packaging: Cut Tape (CT)
Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 110A (Tc)
Rds On (Max) @ Id, Vgs: 1.8mOhm @ 80A, 10V
Power Dissipation (Max): 176W (Tj)
Vgs(th) (Max) @ Id: 4V @ 250µA
Supplier Device Package: TO-263 (D2Pak)
Grade: Automotive
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 40 V
Gate Charge (Qg) (Max) @ Vgs: 138 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 7710 pF @ 25 V
Qualification: AEC-Q101
Description: MOSFET N-CH 40V 110A D2PAK
Packaging: Cut Tape (CT)
Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 110A (Tc)
Rds On (Max) @ Id, Vgs: 1.8mOhm @ 80A, 10V
Power Dissipation (Max): 176W (Tj)
Vgs(th) (Max) @ Id: 4V @ 250µA
Supplier Device Package: TO-263 (D2Pak)
Grade: Automotive
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 40 V
Gate Charge (Qg) (Max) @ Vgs: 138 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 7710 pF @ 25 V
Qualification: AEC-Q101
на замовлення 536 шт:
термін постачання 21-31 дні (днів)| Кількість | Ціна |
|---|---|
| 2+ | 286.14 грн |
| 10+ | 190.91 грн |
| 100+ | 139.76 грн |
| FAN53541UCX |
![]() |
Виробник: onsemi
Description: IC REG BUCK ADJ 5A 20WLCSP
Description: IC REG BUCK ADJ 5A 20WLCSP
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| FCH072N60F |
![]() |
Виробник: onsemi
Description: MOSFET N-CH 600V 52A TO247-3
Packaging: Tube
Package / Case: TO-247-3
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 52A (Tc)
Rds On (Max) @ Id, Vgs: 72mOhm @ 26A, 10V
Power Dissipation (Max): 481W (Tc)
Vgs(th) (Max) @ Id: 5V @ 250µA
Supplier Device Package: TO-247-3
Part Status: Not For New Designs
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 600 V
Gate Charge (Qg) (Max) @ Vgs: 215 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 8660 pF @ 100 V
Description: MOSFET N-CH 600V 52A TO247-3
Packaging: Tube
Package / Case: TO-247-3
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 52A (Tc)
Rds On (Max) @ Id, Vgs: 72mOhm @ 26A, 10V
Power Dissipation (Max): 481W (Tc)
Vgs(th) (Max) @ Id: 5V @ 250µA
Supplier Device Package: TO-247-3
Part Status: Not For New Designs
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 600 V
Gate Charge (Qg) (Max) @ Vgs: 215 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 8660 pF @ 100 V
на замовлення 28107 шт:
термін постачання 21-31 дні (днів)| Кількість | Ціна |
|---|---|
| 1+ | 724.71 грн |
| 30+ | 412.90 грн |
| 120+ | 350.38 грн |
| 510+ | 301.59 грн |
| FDMS3669S |
![]() |
Виробник: onsemi
Description: MOSFET 2N-CH 30V 13A/18A POWER56
Packaging: Tape & Reel (TR)
Package / Case: 8-PowerTDFN
Mounting Type: Surface Mount
Configuration: 2 N-Channel (Dual) Asymmetrical
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
Power - Max: 1W
Drain to Source Voltage (Vdss): 30V
Current - Continuous Drain (Id) @ 25°C: 13A, 18A
Input Capacitance (Ciss) (Max) @ Vds: 1605pF @ 15V
Rds On (Max) @ Id, Vgs: 10mOhm @ 13A, 10V
Gate Charge (Qg) (Max) @ Vgs: 24nC @ 10V
FET Feature: Logic Level Gate
Vgs(th) (Max) @ Id: 2.7V @ 250µA
Supplier Device Package: Power56
Description: MOSFET 2N-CH 30V 13A/18A POWER56
Packaging: Tape & Reel (TR)
Package / Case: 8-PowerTDFN
Mounting Type: Surface Mount
Configuration: 2 N-Channel (Dual) Asymmetrical
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
Power - Max: 1W
Drain to Source Voltage (Vdss): 30V
Current - Continuous Drain (Id) @ 25°C: 13A, 18A
Input Capacitance (Ciss) (Max) @ Vds: 1605pF @ 15V
Rds On (Max) @ Id, Vgs: 10mOhm @ 13A, 10V
Gate Charge (Qg) (Max) @ Vgs: 24nC @ 10V
FET Feature: Logic Level Gate
Vgs(th) (Max) @ Id: 2.7V @ 250µA
Supplier Device Package: Power56
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| FDN537N |
![]() |
Виробник: onsemi
Description: MOSFET N-CH 30V 6.5A SUPERSOT3
Packaging: Tape & Reel (TR)
Package / Case: TO-236-3, SC-59, SOT-23-3
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 6.5A (Ta), 6.5A (Tc)
Rds On (Max) @ Id, Vgs: 23mOhm @ 6.5A, 10V
Power Dissipation (Max): 1.5W (Ta)
Vgs(th) (Max) @ Id: 3V @ 250µA
Supplier Device Package: SOT-23-3
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 30 V
Gate Charge (Qg) (Max) @ Vgs: 8.4 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 465 pF @ 15 V
Description: MOSFET N-CH 30V 6.5A SUPERSOT3
Packaging: Tape & Reel (TR)
Package / Case: TO-236-3, SC-59, SOT-23-3
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 6.5A (Ta), 6.5A (Tc)
Rds On (Max) @ Id, Vgs: 23mOhm @ 6.5A, 10V
Power Dissipation (Max): 1.5W (Ta)
Vgs(th) (Max) @ Id: 3V @ 250µA
Supplier Device Package: SOT-23-3
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 30 V
Gate Charge (Qg) (Max) @ Vgs: 8.4 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 465 pF @ 15 V
на замовлення 60000 шт:
термін постачання 21-31 дні (днів)| Кількість | Ціна |
|---|---|
| 3000+ | 19.79 грн |
| 6000+ | 18.33 грн |
| 9000+ | 17.55 грн |
| 15000+ | 16.19 грн |
| FDB9406-F085 |
![]() |
Виробник: onsemi
Description: MOSFET N-CH 40V 110A D2PAK
Packaging: Tape & Reel (TR)
Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 110A (Tc)
Rds On (Max) @ Id, Vgs: 1.8mOhm @ 80A, 10V
Power Dissipation (Max): 176W (Tj)
Vgs(th) (Max) @ Id: 4V @ 250µA
Supplier Device Package: TO-263 (D2Pak)
Grade: Automotive
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 40 V
Gate Charge (Qg) (Max) @ Vgs: 138 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 7710 pF @ 25 V
Qualification: AEC-Q101
Description: MOSFET N-CH 40V 110A D2PAK
Packaging: Tape & Reel (TR)
Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 110A (Tc)
Rds On (Max) @ Id, Vgs: 1.8mOhm @ 80A, 10V
Power Dissipation (Max): 176W (Tj)
Vgs(th) (Max) @ Id: 4V @ 250µA
Supplier Device Package: TO-263 (D2Pak)
Grade: Automotive
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 40 V
Gate Charge (Qg) (Max) @ Vgs: 138 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 7710 pF @ 25 V
Qualification: AEC-Q101
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| FAN53541UCX |
![]() |
Виробник: onsemi
Description: IC REG BUCK ADJ 5A 20WLCSP
Description: IC REG BUCK ADJ 5A 20WLCSP
товару немає в наявності
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| FDMS3669S |
![]() |
Виробник: onsemi
Description: MOSFET 2N-CH 30V 13A/18A POWER56
Packaging: Cut Tape (CT)
Package / Case: 8-PowerTDFN
Mounting Type: Surface Mount
Configuration: 2 N-Channel (Dual) Asymmetrical
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
Power - Max: 1W
Drain to Source Voltage (Vdss): 30V
Current - Continuous Drain (Id) @ 25°C: 13A, 18A
Input Capacitance (Ciss) (Max) @ Vds: 1605pF @ 15V
Rds On (Max) @ Id, Vgs: 10mOhm @ 13A, 10V
Gate Charge (Qg) (Max) @ Vgs: 24nC @ 10V
FET Feature: Logic Level Gate
Vgs(th) (Max) @ Id: 2.7V @ 250µA
Supplier Device Package: Power56
Description: MOSFET 2N-CH 30V 13A/18A POWER56
Packaging: Cut Tape (CT)
Package / Case: 8-PowerTDFN
Mounting Type: Surface Mount
Configuration: 2 N-Channel (Dual) Asymmetrical
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
Power - Max: 1W
Drain to Source Voltage (Vdss): 30V
Current - Continuous Drain (Id) @ 25°C: 13A, 18A
Input Capacitance (Ciss) (Max) @ Vds: 1605pF @ 15V
Rds On (Max) @ Id, Vgs: 10mOhm @ 13A, 10V
Gate Charge (Qg) (Max) @ Vgs: 24nC @ 10V
FET Feature: Logic Level Gate
Vgs(th) (Max) @ Id: 2.7V @ 250µA
Supplier Device Package: Power56
на замовлення 6169 шт:
термін постачання 21-31 дні (днів)| Кількість | Ціна |
|---|---|
| 2+ | 194.16 грн |
| 10+ | 117.35 грн |
| 100+ | 80.05 грн |
| 500+ | 62.04 грн |
| FDN537N |
![]() |
Виробник: onsemi
Description: MOSFET N-CH 30V 6.5A SUPERSOT3
Packaging: Cut Tape (CT)
Package / Case: TO-236-3, SC-59, SOT-23-3
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 6.5A (Ta), 6.5A (Tc)
Rds On (Max) @ Id, Vgs: 23mOhm @ 6.5A, 10V
Power Dissipation (Max): 1.5W (Ta)
Vgs(th) (Max) @ Id: 3V @ 250µA
Supplier Device Package: SOT-23-3
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 30 V
Gate Charge (Qg) (Max) @ Vgs: 8.4 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 465 pF @ 15 V
Description: MOSFET N-CH 30V 6.5A SUPERSOT3
Packaging: Cut Tape (CT)
Package / Case: TO-236-3, SC-59, SOT-23-3
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 6.5A (Ta), 6.5A (Tc)
Rds On (Max) @ Id, Vgs: 23mOhm @ 6.5A, 10V
Power Dissipation (Max): 1.5W (Ta)
Vgs(th) (Max) @ Id: 3V @ 250µA
Supplier Device Package: SOT-23-3
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 30 V
Gate Charge (Qg) (Max) @ Vgs: 8.4 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 465 pF @ 15 V
на замовлення 60133 шт:
термін постачання 21-31 дні (днів)| Кількість | Ціна |
|---|---|
| 5+ | 80.05 грн |
| 10+ | 48.55 грн |
| 100+ | 32.19 грн |
| 500+ | 23.77 грн |
| 1000+ | 21.51 грн |
| FTCO3V455A1 |
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Виробник: onsemi
Description: MOSFET 6N-CH 40V 150A MODULE
Packaging: Tube
Package / Case: 19-PowerDIP Module
Mounting Type: Through Hole
Configuration: 6 N-Channel (3-Phase Bridge)
Operating Temperature: 175°C (TJ)
Technology: MOSFET (Metal Oxide)
Power - Max: 115W
Drain to Source Voltage (Vdss): 40V
Current - Continuous Drain (Id) @ 25°C: 150A
Rds On (Max) @ Id, Vgs: 1.66mOhm @ 80A, 10V
FET Feature: Logic Level Gate
Supplier Device Package: Module
Description: MOSFET 6N-CH 40V 150A MODULE
Packaging: Tube
Package / Case: 19-PowerDIP Module
Mounting Type: Through Hole
Configuration: 6 N-Channel (3-Phase Bridge)
Operating Temperature: 175°C (TJ)
Technology: MOSFET (Metal Oxide)
Power - Max: 115W
Drain to Source Voltage (Vdss): 40V
Current - Continuous Drain (Id) @ 25°C: 150A
Rds On (Max) @ Id, Vgs: 1.66mOhm @ 80A, 10V
FET Feature: Logic Level Gate
Supplier Device Package: Module
товару немає в наявності
В кошику
од. на суму грн.
| FDPC8012S |
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Виробник: onsemi
Description: MOSFET 2N-CH 25V 13A PWRCLIP-33
Packaging: Cut Tape (CT)
Package / Case: 8-PowerWDFN
Mounting Type: Surface Mount
Configuration: 2 N-Channel (Dual) Asymmetrical
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
Power - Max: 800mW, 900mW
Drain to Source Voltage (Vdss): 25V
Current - Continuous Drain (Id) @ 25°C: 13A, 26A
Input Capacitance (Ciss) (Max) @ Vds: 1075pF @ 13V
Rds On (Max) @ Id, Vgs: 7mOhm @ 12A, 4.5V
Gate Charge (Qg) (Max) @ Vgs: 8nC @ 4.5V
FET Feature: Logic Level Gate
Vgs(th) (Max) @ Id: 2.2V @ 250µA
Supplier Device Package: Powerclip-33
Part Status: Active
Description: MOSFET 2N-CH 25V 13A PWRCLIP-33
Packaging: Cut Tape (CT)
Package / Case: 8-PowerWDFN
Mounting Type: Surface Mount
Configuration: 2 N-Channel (Dual) Asymmetrical
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
Power - Max: 800mW, 900mW
Drain to Source Voltage (Vdss): 25V
Current - Continuous Drain (Id) @ 25°C: 13A, 26A
Input Capacitance (Ciss) (Max) @ Vds: 1075pF @ 13V
Rds On (Max) @ Id, Vgs: 7mOhm @ 12A, 4.5V
Gate Charge (Qg) (Max) @ Vgs: 8nC @ 4.5V
FET Feature: Logic Level Gate
Vgs(th) (Max) @ Id: 2.2V @ 250µA
Supplier Device Package: Powerclip-33
Part Status: Active
на замовлення 30000 шт:
термін постачання 21-31 дні (днів)| Кількість | Ціна |
|---|---|
| 1+ | 341.49 грн |
| 10+ | 217.23 грн |
| 100+ | 158.99 грн |
| 500+ | 134.30 грн |
| 1000+ | 115.49 грн |
| FAN3240TMX |
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Виробник: onsemi
Description: IC PWR DRIVER N-CHAN 1:1 8SOIC
Packaging: Cut Tape (CT)
Package / Case: 8-SOIC (0.154", 3.90mm Width)
Output Type: N-Channel
Mounting Type: Surface Mount
Number of Outputs: 2
Interface: On/Off
Switch Type: Latched Driver
Operating Temperature: -40°C ~ 105°C (TA)
Output Configuration: Low Side
Rds On (Typ): 1Ohm
Input Type: Non-Inverting
Voltage - Load: 8V ~ 60V
Voltage - Supply (Vcc/Vdd): Not Required
Ratio - Input:Output: 1:1
Supplier Device Package: 8-SOIC
Fault Protection: Over Temperature, UVLO
Description: IC PWR DRIVER N-CHAN 1:1 8SOIC
Packaging: Cut Tape (CT)
Package / Case: 8-SOIC (0.154", 3.90mm Width)
Output Type: N-Channel
Mounting Type: Surface Mount
Number of Outputs: 2
Interface: On/Off
Switch Type: Latched Driver
Operating Temperature: -40°C ~ 105°C (TA)
Output Configuration: Low Side
Rds On (Typ): 1Ohm
Input Type: Non-Inverting
Voltage - Load: 8V ~ 60V
Voltage - Supply (Vcc/Vdd): Not Required
Ratio - Input:Output: 1:1
Supplier Device Package: 8-SOIC
Fault Protection: Over Temperature, UVLO
на замовлення 47216 шт:
термін постачання 21-31 дні (днів)| Кількість | Ціна |
|---|---|
| 2+ | 196.72 грн |
| 10+ | 119.07 грн |
| 25+ | 100.54 грн |
| 100+ | 74.74 грн |
| 250+ | 65.11 грн |
| 500+ | 59.19 грн |
| 1000+ | 53.34 грн |
| FAN3241TMX |
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Виробник: onsemi
Description: IC PWR DRIVER N-CHAN 1:1 8SOIC
Packaging: Cut Tape (CT)
Package / Case: 8-SOIC (0.154", 3.90mm Width)
Output Type: N-Channel
Mounting Type: Surface Mount
Number of Outputs: 2
Interface: On/Off
Switch Type: Latched Driver
Operating Temperature: -40°C ~ 105°C (TA)
Output Configuration: Low Side
Rds On (Typ): 1Ohm
Input Type: Non-Inverting
Voltage - Load: 8V ~ 60V
Voltage - Supply (Vcc/Vdd): Not Required
Ratio - Input:Output: 1:1
Supplier Device Package: 8-SOIC
Fault Protection: Over Temperature, UVLO
Part Status: Active
Description: IC PWR DRIVER N-CHAN 1:1 8SOIC
Packaging: Cut Tape (CT)
Package / Case: 8-SOIC (0.154", 3.90mm Width)
Output Type: N-Channel
Mounting Type: Surface Mount
Number of Outputs: 2
Interface: On/Off
Switch Type: Latched Driver
Operating Temperature: -40°C ~ 105°C (TA)
Output Configuration: Low Side
Rds On (Typ): 1Ohm
Input Type: Non-Inverting
Voltage - Load: 8V ~ 60V
Voltage - Supply (Vcc/Vdd): Not Required
Ratio - Input:Output: 1:1
Supplier Device Package: 8-SOIC
Fault Protection: Over Temperature, UVLO
Part Status: Active
на замовлення 2485 шт:
термін постачання 21-31 дні (днів)| Кількість | Ціна |
|---|---|
| 2+ | 181.39 грн |
| 10+ | 109.31 грн |
| 25+ | 92.17 грн |
| 100+ | 68.30 грн |
| 250+ | 59.37 грн |
| 500+ | 53.87 грн |
| 1000+ | 48.45 грн |
| NCL30160GEVB |
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Виробник: onsemi
Description: EVAL BOARD FOR NCL30160
Features: Dimmable
Packaging: Bulk
Voltage - Input: 6.3V ~ 40V
Contents: Board(s)
Current - Output / Channel: 1A
Utilized IC / Part: NCL30160
Supplied Contents: Board(s)
Outputs and Type: 1 Non-Isolated Output
Part Status: Active
Description: EVAL BOARD FOR NCL30160
Features: Dimmable
Packaging: Bulk
Voltage - Input: 6.3V ~ 40V
Contents: Board(s)
Current - Output / Channel: 1A
Utilized IC / Part: NCL30160
Supplied Contents: Board(s)
Outputs and Type: 1 Non-Isolated Output
Part Status: Active
на замовлення 1 шт:
термін постачання 21-31 дні (днів)| Кількість | Ціна |
|---|---|
| 1+ | 6705.49 грн |
| 1N4148-T50R |
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Виробник: onsemi
Description: DIODE STANDARD 100V 200MA DO35
Packaging: Cut Tape (CT)
Package / Case: DO-204AH, DO-35, Axial
Mounting Type: Through Hole
Speed: Small Signal =< 200mA (Io), Any Speed
Reverse Recovery Time (trr): 4 ns
Technology: Standard
Capacitance @ Vr, F: 4pF @ 0V, 1MHz
Current - Average Rectified (Io): 200mA
Supplier Device Package: DO-35
Operating Temperature - Junction: -55°C ~ 175°C
Part Status: Active
Voltage - DC Reverse (Vr) (Max): 100 V
Voltage - Forward (Vf) (Max) @ If: 1 V @ 10 mA
Current - Reverse Leakage @ Vr: 5 µA @ 75 V
Description: DIODE STANDARD 100V 200MA DO35
Packaging: Cut Tape (CT)
Package / Case: DO-204AH, DO-35, Axial
Mounting Type: Through Hole
Speed: Small Signal =< 200mA (Io), Any Speed
Reverse Recovery Time (trr): 4 ns
Technology: Standard
Capacitance @ Vr, F: 4pF @ 0V, 1MHz
Current - Average Rectified (Io): 200mA
Supplier Device Package: DO-35
Operating Temperature - Junction: -55°C ~ 175°C
Part Status: Active
Voltage - DC Reverse (Vr) (Max): 100 V
Voltage - Forward (Vf) (Max) @ If: 1 V @ 10 mA
Current - Reverse Leakage @ Vr: 5 µA @ 75 V
на замовлення 37120 шт:
термін постачання 21-31 дні (днів)| Кількість | Ціна |
|---|---|
| 50+ | 6.81 грн |
| 160+ | 2.05 грн |
| 203+ | 1.62 грн |
| 500+ | 1.24 грн |
| 1000+ | 1.18 грн |
| 2000+ | 1.09 грн |
| 4N32SR2M |
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Виробник: onsemi
Description: OPTOISO 4.17KV DARL W/BASE 6-SMD
Packaging: Cut Tape (CT)
Package / Case: 6-SMD, Gull Wing
Output Type: Darlington with Base
Mounting Type: Surface Mount
Operating Temperature: -40°C ~ 100°C
Voltage - Forward (Vf) (Typ): 1.2V
Input Type: DC
Current - Output / Channel: 150mA
Voltage - Isolation: 4170Vrms
Current Transfer Ratio (Min): 500% @ 10mA
Vce Saturation (Max): 1V
Supplier Device Package: 6-SMD
Voltage - Output (Max): 30V
Turn On / Turn Off Time (Typ): 5µs, 100µs (Max)
Part Status: Active
Number of Channels: 1
Current - DC Forward (If) (Max): 80 mA
Description: OPTOISO 4.17KV DARL W/BASE 6-SMD
Packaging: Cut Tape (CT)
Package / Case: 6-SMD, Gull Wing
Output Type: Darlington with Base
Mounting Type: Surface Mount
Operating Temperature: -40°C ~ 100°C
Voltage - Forward (Vf) (Typ): 1.2V
Input Type: DC
Current - Output / Channel: 150mA
Voltage - Isolation: 4170Vrms
Current Transfer Ratio (Min): 500% @ 10mA
Vce Saturation (Max): 1V
Supplier Device Package: 6-SMD
Voltage - Output (Max): 30V
Turn On / Turn Off Time (Typ): 5µs, 100µs (Max)
Part Status: Active
Number of Channels: 1
Current - DC Forward (If) (Max): 80 mA
на замовлення 25 шт:
термін постачання 21-31 дні (днів)| Кількість | Ціна |
|---|---|
| 6+ | 62.17 грн |
| 10+ | 41.41 грн |
| BC516-D27Z |
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Виробник: onsemi
Description: TRANS PNP DARL 30V 1A TO-92-3
Packaging: Cut Tape (CT)
Package / Case: TO-226-3, TO-92-3 (TO-226AA) Formed Leads
Mounting Type: Through Hole
Transistor Type: PNP - Darlington
Operating Temperature: -55°C ~ 150°C (TJ)
Vce Saturation (Max) @ Ib, Ic: 1V @ 100µA, 100mA
Current - Collector Cutoff (Max): 100nA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce: 30000 @ 20mA, 2V
Frequency - Transition: 200MHz
Supplier Device Package: TO-92-3
Part Status: Active
Current - Collector (Ic) (Max): 1 A
Voltage - Collector Emitter Breakdown (Max): 30 V
Power - Max: 625 mW
Description: TRANS PNP DARL 30V 1A TO-92-3
Packaging: Cut Tape (CT)
Package / Case: TO-226-3, TO-92-3 (TO-226AA) Formed Leads
Mounting Type: Through Hole
Transistor Type: PNP - Darlington
Operating Temperature: -55°C ~ 150°C (TJ)
Vce Saturation (Max) @ Ib, Ic: 1V @ 100µA, 100mA
Current - Collector Cutoff (Max): 100nA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce: 30000 @ 20mA, 2V
Frequency - Transition: 200MHz
Supplier Device Package: TO-92-3
Part Status: Active
Current - Collector (Ic) (Max): 1 A
Voltage - Collector Emitter Breakdown (Max): 30 V
Power - Max: 625 mW
на замовлення 5897 шт:
термін постачання 21-31 дні (днів)| Кількість | Ціна |
|---|---|
| 12+ | 29.81 грн |
| 19+ | 17.88 грн |
| 100+ | 11.30 грн |
| 500+ | 7.91 грн |
| 1000+ | 7.03 грн |
| FDD2670 |
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Виробник: onsemi
Description: MOSFET N-CH 200V 3.6A TO252
Packaging: Cut Tape (CT)
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 3.6A (Ta)
Rds On (Max) @ Id, Vgs: 130mOhm @ 3.6A, 10V
Power Dissipation (Max): 3.2W (Ta), 70W (Tc)
Vgs(th) (Max) @ Id: 4.5V @ 250µA
Supplier Device Package: TO-252AA
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 200 V
Gate Charge (Qg) (Max) @ Vgs: 43 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 1228 pF @ 100 V
Description: MOSFET N-CH 200V 3.6A TO252
Packaging: Cut Tape (CT)
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 3.6A (Ta)
Rds On (Max) @ Id, Vgs: 130mOhm @ 3.6A, 10V
Power Dissipation (Max): 3.2W (Ta), 70W (Tc)
Vgs(th) (Max) @ Id: 4.5V @ 250µA
Supplier Device Package: TO-252AA
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 200 V
Gate Charge (Qg) (Max) @ Vgs: 43 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 1228 pF @ 100 V
на замовлення 1133 шт:
термін постачання 21-31 дні (днів)| Кількість | Ціна |
|---|---|
| 3+ | 167.76 грн |
| 10+ | 112.68 грн |
| 100+ | 80.40 грн |
| 500+ | 60.60 грн |
| 1000+ | 60.37 грн |
| FDD3670 |
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Виробник: onsemi
Description: MOSFET N-CH 100V 34A TO252
Packaging: Cut Tape (CT)
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 34A (Ta)
Rds On (Max) @ Id, Vgs: 32mOhm @ 7.3A, 10V
Power Dissipation (Max): 3.8W (Ta), 83W (Tc)
Vgs(th) (Max) @ Id: 4V @ 250µA
Supplier Device Package: TO-252AA
Drive Voltage (Max Rds On, Min Rds On): 6V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 100 V
Gate Charge (Qg) (Max) @ Vgs: 80 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 2490 pF @ 50 V
Description: MOSFET N-CH 100V 34A TO252
Packaging: Cut Tape (CT)
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 34A (Ta)
Rds On (Max) @ Id, Vgs: 32mOhm @ 7.3A, 10V
Power Dissipation (Max): 3.8W (Ta), 83W (Tc)
Vgs(th) (Max) @ Id: 4V @ 250µA
Supplier Device Package: TO-252AA
Drive Voltage (Max Rds On, Min Rds On): 6V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 100 V
Gate Charge (Qg) (Max) @ Vgs: 80 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 2490 pF @ 50 V
на замовлення 1507 шт:
термін постачання 21-31 дні (днів)| Кількість | Ціна |
|---|---|
| 2+ | 170.32 грн |
| 10+ | 104.72 грн |
| 100+ | 71.31 грн |
| 500+ | 53.49 грн |
| 1000+ | 51.95 грн |
| FDD3680 |
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Виробник: onsemi
Description: MOSFET N-CH 100V 25A TO252
Packaging: Cut Tape (CT)
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 25A (Ta)
Rds On (Max) @ Id, Vgs: 46mOhm @ 6.1A, 10V
Power Dissipation (Max): 68W (Ta)
Vgs(th) (Max) @ Id: 4V @ 250µA
Supplier Device Package: TO-252AA
Part Status: Obsolete
Drive Voltage (Max Rds On, Min Rds On): 6V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 100 V
Gate Charge (Qg) (Max) @ Vgs: 53 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 1735 pF @ 50 V
Description: MOSFET N-CH 100V 25A TO252
Packaging: Cut Tape (CT)
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 25A (Ta)
Rds On (Max) @ Id, Vgs: 46mOhm @ 6.1A, 10V
Power Dissipation (Max): 68W (Ta)
Vgs(th) (Max) @ Id: 4V @ 250µA
Supplier Device Package: TO-252AA
Part Status: Obsolete
Drive Voltage (Max Rds On, Min Rds On): 6V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 100 V
Gate Charge (Qg) (Max) @ Vgs: 53 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 1735 pF @ 50 V
товару немає в наявності
В кошику
од. на суму грн.
| FDD5670 |
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Виробник: onsemi
Description: MOSFET N-CH 60V 52A TO252
Packaging: Cut Tape (CT)
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 52A (Ta)
Rds On (Max) @ Id, Vgs: 15mOhm @ 10A, 10V
Power Dissipation (Max): 3.8W (Ta), 83W (Tc)
Vgs(th) (Max) @ Id: 4V @ 250µA
Supplier Device Package: TO-252AA
Drive Voltage (Max Rds On, Min Rds On): 6V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 60 V
Gate Charge (Qg) (Max) @ Vgs: 73 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 2739 pF @ 15 V
Description: MOSFET N-CH 60V 52A TO252
Packaging: Cut Tape (CT)
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 52A (Ta)
Rds On (Max) @ Id, Vgs: 15mOhm @ 10A, 10V
Power Dissipation (Max): 3.8W (Ta), 83W (Tc)
Vgs(th) (Max) @ Id: 4V @ 250µA
Supplier Device Package: TO-252AA
Drive Voltage (Max Rds On, Min Rds On): 6V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 60 V
Gate Charge (Qg) (Max) @ Vgs: 73 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 2739 pF @ 15 V
товару немає в наявності
В кошику
од. на суму грн.
| FDLL485B |
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Виробник: onsemi
Description: DIODE STANDARD 180V 200MA SOD80
Packaging: Cut Tape (CT)
Package / Case: DO-213AC, MINI-MELF, SOD-80
Mounting Type: Surface Mount
Speed: Small Signal =< 200mA (Io), Any Speed
Technology: Standard
Capacitance @ Vr, F: 6pF @ 0V, 1MHz
Current - Average Rectified (Io): 200mA
Supplier Device Package: SOD-80
Operating Temperature - Junction: -65°C ~ 200°C
Part Status: Active
Voltage - DC Reverse (Vr) (Max): 180 V
Voltage - Forward (Vf) (Max) @ If: 1 V @ 100 mA
Current - Reverse Leakage @ Vr: 25 nA @ 180 V
Description: DIODE STANDARD 180V 200MA SOD80
Packaging: Cut Tape (CT)
Package / Case: DO-213AC, MINI-MELF, SOD-80
Mounting Type: Surface Mount
Speed: Small Signal =< 200mA (Io), Any Speed
Technology: Standard
Capacitance @ Vr, F: 6pF @ 0V, 1MHz
Current - Average Rectified (Io): 200mA
Supplier Device Package: SOD-80
Operating Temperature - Junction: -65°C ~ 200°C
Part Status: Active
Voltage - DC Reverse (Vr) (Max): 180 V
Voltage - Forward (Vf) (Max) @ If: 1 V @ 100 mA
Current - Reverse Leakage @ Vr: 25 nA @ 180 V
на замовлення 2620 шт:
термін постачання 21-31 дні (днів)| Кількість | Ціна |
|---|---|
| 34+ | 10.22 грн |
| 49+ | 6.81 грн |
| 100+ | 6.68 грн |
| 500+ | 4.60 грн |
| 1000+ | 4.06 грн |
| FDMS8090 |
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Виробник: onsemi
Description: MOSFET 2N-CH 100V 10A 8MLP
Packaging: Cut Tape (CT)
Package / Case: 8-PowerWDFN
Mounting Type: Surface Mount
Configuration: 2 N-Channel (Dual)
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
Power - Max: 2.2W
Drain to Source Voltage (Vdss): 100V
Current - Continuous Drain (Id) @ 25°C: 10A
Input Capacitance (Ciss) (Max) @ Vds: 1800pF @ 50V
Rds On (Max) @ Id, Vgs: 13mOhm @ 10A, 10V
Gate Charge (Qg) (Max) @ Vgs: 27nC @ 10V
FET Feature: Logic Level Gate
Vgs(th) (Max) @ Id: 4V @ 250µA
Supplier Device Package: 8-MLP (5x6), Power56
Description: MOSFET 2N-CH 100V 10A 8MLP
Packaging: Cut Tape (CT)
Package / Case: 8-PowerWDFN
Mounting Type: Surface Mount
Configuration: 2 N-Channel (Dual)
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
Power - Max: 2.2W
Drain to Source Voltage (Vdss): 100V
Current - Continuous Drain (Id) @ 25°C: 10A
Input Capacitance (Ciss) (Max) @ Vds: 1800pF @ 50V
Rds On (Max) @ Id, Vgs: 13mOhm @ 10A, 10V
Gate Charge (Qg) (Max) @ Vgs: 27nC @ 10V
FET Feature: Logic Level Gate
Vgs(th) (Max) @ Id: 4V @ 250µA
Supplier Device Package: 8-MLP (5x6), Power56
на замовлення 2601 шт:
термін постачання 21-31 дні (днів)| Кількість | Ціна |
|---|---|
| 1+ | 524.58 грн |
| 10+ | 341.14 грн |
| 100+ | 254.93 грн |
| FDS3512 |
![]() |
Виробник: onsemi
Description: MOSFET N-CH 80V 4A 8SOIC
Packaging: Cut Tape (CT)
Package / Case: 8-SOIC (0.154", 3.90mm Width)
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 4A (Ta)
Rds On (Max) @ Id, Vgs: 70mOhm @ 4A, 10V
Power Dissipation (Max): 2.5W (Ta)
Vgs(th) (Max) @ Id: 4V @ 250µA
Supplier Device Package: 8-SOIC
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 6V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 80 V
Gate Charge (Qg) (Max) @ Vgs: 18 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 634 pF @ 40 V
Description: MOSFET N-CH 80V 4A 8SOIC
Packaging: Cut Tape (CT)
Package / Case: 8-SOIC (0.154", 3.90mm Width)
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 4A (Ta)
Rds On (Max) @ Id, Vgs: 70mOhm @ 4A, 10V
Power Dissipation (Max): 2.5W (Ta)
Vgs(th) (Max) @ Id: 4V @ 250µA
Supplier Device Package: 8-SOIC
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 6V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 80 V
Gate Charge (Qg) (Max) @ Vgs: 18 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 634 pF @ 40 V
на замовлення 4594 шт:
термін постачання 21-31 дні (днів)| Кількість | Ціна |
|---|---|
| 2+ | 235.04 грн |
| 10+ | 203.37 грн |
| 100+ | 163.45 грн |
| 500+ | 126.03 грн |
| 1000+ | 104.42 грн |
| FJT44KTF |
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Виробник: onsemi
Description: TRANS NPN 400V 0.3A SOT-223-4
Packaging: Cut Tape (CT)
Package / Case: TO-261-4, TO-261AA
Mounting Type: Surface Mount
Transistor Type: NPN
Operating Temperature: 150°C (TJ)
Vce Saturation (Max) @ Ib, Ic: 750mV @ 5mA, 50mA
Current - Collector Cutoff (Max): 500nA
DC Current Gain (hFE) (Min) @ Ic, Vce: 50 @ 10mA, 10V
Supplier Device Package: SOT-223-4
Part Status: Active
Current - Collector (Ic) (Max): 300 mA
Voltage - Collector Emitter Breakdown (Max): 400 V
Power - Max: 2 W
Description: TRANS NPN 400V 0.3A SOT-223-4
Packaging: Cut Tape (CT)
Package / Case: TO-261-4, TO-261AA
Mounting Type: Surface Mount
Transistor Type: NPN
Operating Temperature: 150°C (TJ)
Vce Saturation (Max) @ Ib, Ic: 750mV @ 5mA, 50mA
Current - Collector Cutoff (Max): 500nA
DC Current Gain (hFE) (Min) @ Ic, Vce: 50 @ 10mA, 10V
Supplier Device Package: SOT-223-4
Part Status: Active
Current - Collector (Ic) (Max): 300 mA
Voltage - Collector Emitter Breakdown (Max): 400 V
Power - Max: 2 W
на замовлення 8948 шт:
термін постачання 21-31 дні (днів)| Кількість | Ціна |
|---|---|
| 7+ | 56.21 грн |
| 10+ | 33.79 грн |
| 100+ | 21.78 грн |
| 500+ | 15.59 грн |
| 1000+ | 14.03 грн |
| FJV992FMTF |
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Виробник: onsemi
Description: TRANS PNP 120V 0.05A SOT-23-3
Packaging: Cut Tape (CT)
Package / Case: TO-236-3, SC-59, SOT-23-3
Mounting Type: Surface Mount
Transistor Type: PNP
Operating Temperature: 150°C (TJ)
Vce Saturation (Max) @ Ib, Ic: 300mV @ 1mA, 10mA
DC Current Gain (hFE) (Min) @ Ic, Vce: 300 @ 1mA, 6V
Frequency - Transition: 50MHz
Supplier Device Package: SOT-23-3
Current - Collector (Ic) (Max): 50 mA
Voltage - Collector Emitter Breakdown (Max): 120 V
Power - Max: 300 mW
Description: TRANS PNP 120V 0.05A SOT-23-3
Packaging: Cut Tape (CT)
Package / Case: TO-236-3, SC-59, SOT-23-3
Mounting Type: Surface Mount
Transistor Type: PNP
Operating Temperature: 150°C (TJ)
Vce Saturation (Max) @ Ib, Ic: 300mV @ 1mA, 10mA
DC Current Gain (hFE) (Min) @ Ic, Vce: 300 @ 1mA, 6V
Frequency - Transition: 50MHz
Supplier Device Package: SOT-23-3
Current - Collector (Ic) (Max): 50 mA
Voltage - Collector Emitter Breakdown (Max): 120 V
Power - Max: 300 mW
на замовлення 92907 шт:
термін постачання 21-31 дні (днів)| Кількість | Ціна |
|---|---|
| 20+ | 17.88 грн |
| 31+ | 10.66 грн |
| 100+ | 6.63 грн |
| 500+ | 4.56 грн |
| 1000+ | 4.01 грн |
| FMB100 |
![]() |
Виробник: onsemi
Description: TRANS NPN 45V 0.5A SSOT-6
Description: TRANS NPN 45V 0.5A SSOT-6
товару немає в наявності
В кошику
од. на суму грн.
| FQD2N90TM |
![]() |
Виробник: onsemi
Description: MOSFET N-CH 900V 1.7A DPAK
Packaging: Cut Tape (CT)
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 1.7A (Tc)
Rds On (Max) @ Id, Vgs: 7.2Ohm @ 850mA, 10V
Power Dissipation (Max): 2.5W (Ta), 50W (Tc)
Vgs(th) (Max) @ Id: 5V @ 250µA
Supplier Device Package: TO-252AA
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±30V
Drain to Source Voltage (Vdss): 900 V
Gate Charge (Qg) (Max) @ Vgs: 15 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 500 pF @ 25 V
Description: MOSFET N-CH 900V 1.7A DPAK
Packaging: Cut Tape (CT)
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 1.7A (Tc)
Rds On (Max) @ Id, Vgs: 7.2Ohm @ 850mA, 10V
Power Dissipation (Max): 2.5W (Ta), 50W (Tc)
Vgs(th) (Max) @ Id: 5V @ 250µA
Supplier Device Package: TO-252AA
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±30V
Drain to Source Voltage (Vdss): 900 V
Gate Charge (Qg) (Max) @ Vgs: 15 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 500 pF @ 25 V
на замовлення 2929 шт:
термін постачання 21-31 дні (днів)| Кількість | Ціна |
|---|---|
| 3+ | 146.48 грн |
| 10+ | 89.71 грн |
| 100+ | 60.60 грн |
| 500+ | 45.15 грн |
| 1000+ | 42.32 грн |
| FQD5N20LTM |
![]() |
Виробник: onsemi
Description: MOSFET N-CH 200V 3.8A DPAK
Packaging: Cut Tape (CT)
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 3.8A (Tc)
Rds On (Max) @ Id, Vgs: 1.2Ohm @ 1.9A, 10V
Power Dissipation (Max): 2.5W (Ta), 37W (Tc)
Vgs(th) (Max) @ Id: 2V @ 250µA
Supplier Device Package: TO-252AA
Drive Voltage (Max Rds On, Min Rds On): 5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 200 V
Gate Charge (Qg) (Max) @ Vgs: 6.2 nC @ 5 V
Input Capacitance (Ciss) (Max) @ Vds: 325 pF @ 25 V
Description: MOSFET N-CH 200V 3.8A DPAK
Packaging: Cut Tape (CT)
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 3.8A (Tc)
Rds On (Max) @ Id, Vgs: 1.2Ohm @ 1.9A, 10V
Power Dissipation (Max): 2.5W (Ta), 37W (Tc)
Vgs(th) (Max) @ Id: 2V @ 250µA
Supplier Device Package: TO-252AA
Drive Voltage (Max Rds On, Min Rds On): 5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 200 V
Gate Charge (Qg) (Max) @ Vgs: 6.2 nC @ 5 V
Input Capacitance (Ciss) (Max) @ Vds: 325 pF @ 25 V
товару немає в наявності
В кошику
од. на суму грн.
| FSA2267AL10X |
Виробник: onsemi
Description: IC SWITCH DUAL SPDT 10MICROPAK
Packaging: Cut Tape (CT)
Package / Case: 10-UFQFN Exposed Pad
Mounting Type: Surface Mount
Operating Temperature: -40°C ~ 85°C (TA)
Applications: Audio
On-State Resistance (Max): 350mOhm (Typ)
-3db Bandwidth: 45MHz
Supplier Device Package: 10-MicroPak™
Voltage - Supply, Single (V+): 2.3V ~ 4.3V
Switch Circuit: SPDT
Multiplexer/Demultiplexer Circuit: 2:1
Number of Channels: 2
Description: IC SWITCH DUAL SPDT 10MICROPAK
Packaging: Cut Tape (CT)
Package / Case: 10-UFQFN Exposed Pad
Mounting Type: Surface Mount
Operating Temperature: -40°C ~ 85°C (TA)
Applications: Audio
On-State Resistance (Max): 350mOhm (Typ)
-3db Bandwidth: 45MHz
Supplier Device Package: 10-MicroPak™
Voltage - Supply, Single (V+): 2.3V ~ 4.3V
Switch Circuit: SPDT
Multiplexer/Demultiplexer Circuit: 2:1
Number of Channels: 2
на замовлення 1623 шт:
термін постачання 21-31 дні (днів)| Кількість | Ціна |
|---|---|
| 4+ | 109.00 грн |
| 10+ | 64.05 грн |
| 25+ | 53.40 грн |
| 100+ | 38.83 грн |
| 250+ | 33.28 грн |
| 500+ | 29.86 грн |
| 1000+ | 26.55 грн |
| FSA66P5X |
![]() |
Виробник: onsemi
Description: IC SWITCH SPST-NO X 1 SC70-5
Packaging: Cut Tape (CT)
Package / Case: 5-TSSOP, SC-70-5, SOT-353
Mounting Type: Surface Mount
Operating Temperature: -40°C ~ 85°C (TA)
-3db Bandwidth: 250MHz
Supplier Device Package: SC-70-5
Voltage - Supply, Single (V+): 1.65V ~ 5.5V
Charge Injection: 0.05pC
Switch Circuit: SPST - NO
Multiplexer/Demultiplexer Circuit: 1:1
Channel Capacitance (CS(off), CD(off)): 6pF
Number of Circuits: 1
Description: IC SWITCH SPST-NO X 1 SC70-5
Packaging: Cut Tape (CT)
Package / Case: 5-TSSOP, SC-70-5, SOT-353
Mounting Type: Surface Mount
Operating Temperature: -40°C ~ 85°C (TA)
-3db Bandwidth: 250MHz
Supplier Device Package: SC-70-5
Voltage - Supply, Single (V+): 1.65V ~ 5.5V
Charge Injection: 0.05pC
Switch Circuit: SPST - NO
Multiplexer/Demultiplexer Circuit: 1:1
Channel Capacitance (CS(off), CD(off)): 6pF
Number of Circuits: 1
товару немає в наявності
В кошику
од. на суму грн.
| FSB649 |
![]() |
Виробник: onsemi
Description: TRANS NPN 25V 3A SOT-23-3
Packaging: Cut Tape (CT)
Package / Case: TO-236-3, SC-59, SOT-23-3
Mounting Type: Surface Mount
Transistor Type: NPN
Operating Temperature: -55°C ~ 150°C (TJ)
Vce Saturation (Max) @ Ib, Ic: 600mV @ 300mA, 3A
Current - Collector Cutoff (Max): 100nA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce: 100 @ 1A, 2V
Frequency - Transition: 150MHz
Supplier Device Package: SOT-23-3
Part Status: Active
Current - Collector (Ic) (Max): 3 A
Voltage - Collector Emitter Breakdown (Max): 25 V
Power - Max: 500 mW
Description: TRANS NPN 25V 3A SOT-23-3
Packaging: Cut Tape (CT)
Package / Case: TO-236-3, SC-59, SOT-23-3
Mounting Type: Surface Mount
Transistor Type: NPN
Operating Temperature: -55°C ~ 150°C (TJ)
Vce Saturation (Max) @ Ib, Ic: 600mV @ 300mA, 3A
Current - Collector Cutoff (Max): 100nA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce: 100 @ 1A, 2V
Frequency - Transition: 150MHz
Supplier Device Package: SOT-23-3
Part Status: Active
Current - Collector (Ic) (Max): 3 A
Voltage - Collector Emitter Breakdown (Max): 25 V
Power - Max: 500 mW
на замовлення 2733 шт:
термін постачання 21-31 дні (днів)| Кількість | Ціна |
|---|---|
| 7+ | 52.80 грн |
| 11+ | 31.16 грн |
| 100+ | 20.00 грн |
| 500+ | 14.23 грн |
| 1000+ | 12.77 грн |
| HCPL0701R2 |
![]() |
Виробник: onsemi
Description: OPTOISO 2.5KV DARL W/BASE 8-SOIC
Packaging: Cut Tape (CT)
Package / Case: 8-SOIC (0.154", 3.90mm Width)
Output Type: Darlington with Base
Mounting Type: Surface Mount
Operating Temperature: -40°C ~ 85°C
Voltage - Forward (Vf) (Typ): 1.25V
Input Type: DC
Current - Output / Channel: 60mA
Voltage - Isolation: 2500Vrms
Current Transfer Ratio (Min): 500% @ 1.6mA
Current Transfer Ratio (Max): 2600% @ 1.6mA
Supplier Device Package: 8-SOIC
Voltage - Output (Max): 18V
Turn On / Turn Off Time (Typ): 300ns, 1.6µs
Part Status: Active
Number of Channels: 1
Current - DC Forward (If) (Max): 20 mA
Description: OPTOISO 2.5KV DARL W/BASE 8-SOIC
Packaging: Cut Tape (CT)
Package / Case: 8-SOIC (0.154", 3.90mm Width)
Output Type: Darlington with Base
Mounting Type: Surface Mount
Operating Temperature: -40°C ~ 85°C
Voltage - Forward (Vf) (Typ): 1.25V
Input Type: DC
Current - Output / Channel: 60mA
Voltage - Isolation: 2500Vrms
Current Transfer Ratio (Min): 500% @ 1.6mA
Current Transfer Ratio (Max): 2600% @ 1.6mA
Supplier Device Package: 8-SOIC
Voltage - Output (Max): 18V
Turn On / Turn Off Time (Typ): 300ns, 1.6µs
Part Status: Active
Number of Channels: 1
Current - DC Forward (If) (Max): 20 mA
на замовлення 2203 шт:
термін постачання 21-31 дні (днів)| Кількість | Ціна |
|---|---|
| 2+ | 199.27 грн |
| 10+ | 139.08 грн |
| 100+ | 107.70 грн |
| 500+ | 88.09 грн |
| 1000+ | 83.86 грн |
| HGTD1N120BNS9A |
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Виробник: onsemi
Description: IGBT NPT 1200V 5.3A TO-252AA
Packaging: Cut Tape (CT)
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Input Type: Standard
Vce(on) (Max) @ Vge, Ic: 2.9V @ 15V, 1A
Supplier Device Package: TO-252AA
IGBT Type: NPT
Td (on/off) @ 25°C: 15ns/67ns
Switching Energy: 70µJ (on), 90µJ (off)
Test Condition: 960V, 1A, 82Ohm, 15V
Gate Charge: 14 nC
Part Status: Active
Current - Collector (Ic) (Max): 5.3 A
Voltage - Collector Emitter Breakdown (Max): 1200 V
Current - Collector Pulsed (Icm): 6 A
Power - Max: 60 W
Description: IGBT NPT 1200V 5.3A TO-252AA
Packaging: Cut Tape (CT)
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Input Type: Standard
Vce(on) (Max) @ Vge, Ic: 2.9V @ 15V, 1A
Supplier Device Package: TO-252AA
IGBT Type: NPT
Td (on/off) @ 25°C: 15ns/67ns
Switching Energy: 70µJ (on), 90µJ (off)
Test Condition: 960V, 1A, 82Ohm, 15V
Gate Charge: 14 nC
Part Status: Active
Current - Collector (Ic) (Max): 5.3 A
Voltage - Collector Emitter Breakdown (Max): 1200 V
Current - Collector Pulsed (Icm): 6 A
Power - Max: 60 W
на замовлення 18556 шт:
термін постачання 21-31 дні (днів)| Кількість | Ціна |
|---|---|
| 3+ | 155.84 грн |
| 10+ | 96.27 грн |
| 100+ | 65.29 грн |
| 500+ | 48.83 грн |
| 1000+ | 46.72 грн |
| KA431SLMF2TF |
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Виробник: onsemi
Description: IC VREF SHUNT ADJ 0.5% SOT23F-3
Tolerance: ±0.5%
Packaging: Cut Tape (CT)
Package / Case: SOT-23-3 Flat Leads
Temperature Coefficient: 50ppm/°C Typical
Output Type: Adjustable
Mounting Type: Surface Mount
Reference Type: Shunt
Operating Temperature: -25°C ~ 85°C (TA)
Supplier Device Package: SOT-23F-3
Voltage - Output (Min/Fixed): 2.495V
Part Status: Active
Current - Cathode: 1 mA
Current - Output: 100 mA
Voltage - Output (Max): 36 V
Description: IC VREF SHUNT ADJ 0.5% SOT23F-3
Tolerance: ±0.5%
Packaging: Cut Tape (CT)
Package / Case: SOT-23-3 Flat Leads
Temperature Coefficient: 50ppm/°C Typical
Output Type: Adjustable
Mounting Type: Surface Mount
Reference Type: Shunt
Operating Temperature: -25°C ~ 85°C (TA)
Supplier Device Package: SOT-23F-3
Voltage - Output (Min/Fixed): 2.495V
Part Status: Active
Current - Cathode: 1 mA
Current - Output: 100 mA
Voltage - Output (Max): 36 V
товару немає в наявності
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од. на суму грн.
| KA431SLMFTF |
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Виробник: onsemi
Description: IC VREF SHUNT ADJ 0.5% SOT23F-3
Tolerance: ±0.5%
Packaging: Cut Tape (CT)
Package / Case: SOT-23-3 Flat Leads
Temperature Coefficient: 50ppm/°C Typical
Output Type: Adjustable
Mounting Type: Surface Mount
Reference Type: Shunt
Operating Temperature: -25°C ~ 85°C (TA)
Supplier Device Package: SOT-23F-3
Voltage - Output (Min/Fixed): 2.495V
Part Status: Active
Current - Cathode: 1 mA
Current - Output: 100 mA
Voltage - Output (Max): 36 V
Description: IC VREF SHUNT ADJ 0.5% SOT23F-3
Tolerance: ±0.5%
Packaging: Cut Tape (CT)
Package / Case: SOT-23-3 Flat Leads
Temperature Coefficient: 50ppm/°C Typical
Output Type: Adjustable
Mounting Type: Surface Mount
Reference Type: Shunt
Operating Temperature: -25°C ~ 85°C (TA)
Supplier Device Package: SOT-23F-3
Voltage - Output (Min/Fixed): 2.495V
Part Status: Active
Current - Cathode: 1 mA
Current - Output: 100 mA
Voltage - Output (Max): 36 V
товару немає в наявності
В кошику
од. на суму грн.
| KSB834WYTM |
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Виробник: onsemi
Description: TRANS PNP 60V 3A D2PAK
Packaging: Cut Tape (CT)
Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
Mounting Type: Surface Mount
Transistor Type: PNP
Operating Temperature: 150°C (TJ)
Vce Saturation (Max) @ Ib, Ic: 1V @ 300mA, 3A
Current - Collector Cutoff (Max): 100µA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce: 100 @ 5mA, 5V
Frequency - Transition: 9MHz
Supplier Device Package: TO-263 (D2Pak)
Part Status: Active
Current - Collector (Ic) (Max): 3 A
Voltage - Collector Emitter Breakdown (Max): 60 V
Power - Max: 1.5 W
Description: TRANS PNP 60V 3A D2PAK
Packaging: Cut Tape (CT)
Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
Mounting Type: Surface Mount
Transistor Type: PNP
Operating Temperature: 150°C (TJ)
Vce Saturation (Max) @ Ib, Ic: 1V @ 300mA, 3A
Current - Collector Cutoff (Max): 100µA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce: 100 @ 5mA, 5V
Frequency - Transition: 9MHz
Supplier Device Package: TO-263 (D2Pak)
Part Status: Active
Current - Collector (Ic) (Max): 3 A
Voltage - Collector Emitter Breakdown (Max): 60 V
Power - Max: 1.5 W
на замовлення 809 шт:
термін постачання 21-31 дні (днів)| Кількість | Ціна |
|---|---|
| 5+ | 69.83 грн |
| 10+ | 58.31 грн |
| 100+ | 40.39 грн |
| KST5550MTF |
![]() |
Виробник: onsemi
Description: TRANS NPN 140V 0.6A SOT-23-3
Packaging: Cut Tape (CT)
Package / Case: TO-236-3, SC-59, SOT-23-3
Mounting Type: Surface Mount
Transistor Type: NPN
Vce Saturation (Max) @ Ib, Ic: 250mV @ 5mA, 50mA
Current - Collector Cutoff (Max): 100nA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce: 60 @ 10mA, 5V
Frequency - Transition: 300MHz
Supplier Device Package: SOT-23-3
Part Status: Obsolete
Current - Collector (Ic) (Max): 600 mA
Voltage - Collector Emitter Breakdown (Max): 140 V
Power - Max: 350 mW
Description: TRANS NPN 140V 0.6A SOT-23-3
Packaging: Cut Tape (CT)
Package / Case: TO-236-3, SC-59, SOT-23-3
Mounting Type: Surface Mount
Transistor Type: NPN
Vce Saturation (Max) @ Ib, Ic: 250mV @ 5mA, 50mA
Current - Collector Cutoff (Max): 100nA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce: 60 @ 10mA, 5V
Frequency - Transition: 300MHz
Supplier Device Package: SOT-23-3
Part Status: Obsolete
Current - Collector (Ic) (Max): 600 mA
Voltage - Collector Emitter Breakdown (Max): 140 V
Power - Max: 350 mW
товару немає в наявності
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од. на суму грн.
| MMBD2838 |
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Виробник: onsemi
Description: DIODE ARRAY GP 75V 200MA SOT23-3
Packaging: Cut Tape (CT)
Package / Case: TO-236-3, SC-59, SOT-23-3
Mounting Type: Surface Mount
Speed: Small Signal =< 200mA (Io), Any Speed
Reverse Recovery Time (trr): 4 ns
Technology: Standard
Diode Configuration: 1 Pair Common Cathode
Current - Average Rectified (Io) (per Diode): 200mA
Supplier Device Package: SOT-23-3
Operating Temperature - Junction: -55°C ~ 150°C
Voltage - DC Reverse (Vr) (Max): 75 V
Voltage - Forward (Vf) (Max) @ If: 1.2 V @ 100 mA
Current - Reverse Leakage @ Vr: 100 nA @ 50 V
Description: DIODE ARRAY GP 75V 200MA SOT23-3
Packaging: Cut Tape (CT)
Package / Case: TO-236-3, SC-59, SOT-23-3
Mounting Type: Surface Mount
Speed: Small Signal =< 200mA (Io), Any Speed
Reverse Recovery Time (trr): 4 ns
Technology: Standard
Diode Configuration: 1 Pair Common Cathode
Current - Average Rectified (Io) (per Diode): 200mA
Supplier Device Package: SOT-23-3
Operating Temperature - Junction: -55°C ~ 150°C
Voltage - DC Reverse (Vr) (Max): 75 V
Voltage - Forward (Vf) (Max) @ If: 1.2 V @ 100 mA
Current - Reverse Leakage @ Vr: 100 nA @ 50 V
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| MMBT5962 |
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Виробник: onsemi
Description: TRANS NPN 45V 0.1A SOT23-3
Packaging: Cut Tape (CT)
Package / Case: TO-236-3, SC-59, SOT-23-3
Mounting Type: Surface Mount
Transistor Type: NPN
Operating Temperature: -55°C ~ 150°C (TJ)
Vce Saturation (Max) @ Ib, Ic: 200mV @ 500µA, 10mA
Current - Collector Cutoff (Max): 2nA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce: 600 @ 10mA, 5V
Supplier Device Package: SOT-23-3
Current - Collector (Ic) (Max): 100 mA
Voltage - Collector Emitter Breakdown (Max): 45 V
Power - Max: 350 mW
Description: TRANS NPN 45V 0.1A SOT23-3
Packaging: Cut Tape (CT)
Package / Case: TO-236-3, SC-59, SOT-23-3
Mounting Type: Surface Mount
Transistor Type: NPN
Operating Temperature: -55°C ~ 150°C (TJ)
Vce Saturation (Max) @ Ib, Ic: 200mV @ 500µA, 10mA
Current - Collector Cutoff (Max): 2nA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce: 600 @ 10mA, 5V
Supplier Device Package: SOT-23-3
Current - Collector (Ic) (Max): 100 mA
Voltage - Collector Emitter Breakdown (Max): 45 V
Power - Max: 350 mW
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| MMSZ4688 |
Виробник: onsemi
Description: DIODE ZENER 4.7V 500MW SOD123
Tolerance: ±5%
Packaging: Cut Tape (CT)
Package / Case: SOD-123
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C
Voltage - Zener (Nom) (Vz): 4.7 V
Supplier Device Package: SOD-123
Part Status: Obsolete
Power - Max: 500 mW
Voltage - Forward (Vf) (Max) @ If: 900 mV @ 10 mA
Current - Reverse Leakage @ Vr: 10 µA @ 3 V
Description: DIODE ZENER 4.7V 500MW SOD123
Tolerance: ±5%
Packaging: Cut Tape (CT)
Package / Case: SOD-123
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C
Voltage - Zener (Nom) (Vz): 4.7 V
Supplier Device Package: SOD-123
Part Status: Obsolete
Power - Max: 500 mW
Voltage - Forward (Vf) (Max) @ If: 900 mV @ 10 mA
Current - Reverse Leakage @ Vr: 10 µA @ 3 V
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| MMSZ5243B |
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Виробник: onsemi
Description: DIODE ZENER 13V 500MW SOD123
Tolerance: ±5%
Packaging: Cut Tape (CT)
Package / Case: SOD-123
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C
Voltage - Zener (Nom) (Vz): 13 V
Impedance (Max) (Zzt): 13 Ohms
Supplier Device Package: SOD-123
Power - Max: 500 mW
Voltage - Forward (Vf) (Max) @ If: 900 mV @ 10 mA
Current - Reverse Leakage @ Vr: 500 nA @ 9.9 V
Description: DIODE ZENER 13V 500MW SOD123
Tolerance: ±5%
Packaging: Cut Tape (CT)
Package / Case: SOD-123
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C
Voltage - Zener (Nom) (Vz): 13 V
Impedance (Max) (Zzt): 13 Ohms
Supplier Device Package: SOD-123
Power - Max: 500 mW
Voltage - Forward (Vf) (Max) @ If: 900 mV @ 10 mA
Current - Reverse Leakage @ Vr: 500 nA @ 9.9 V
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| NC7S08P5 |
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Виробник: onsemi
Description: IC GATE AND 1CH 2-INP SC70-5
Packaging: Cut Tape (CT)
Package / Case: 5-TSSOP, SC-70-5, SOT-353
Mounting Type: Surface Mount
Logic Type: AND Gate
Operating Temperature: -40°C ~ 85°C
Voltage - Supply: 2V ~ 6V
Current - Output High, Low: 2.6mA, 2.6mA
Number of Inputs: 2
Supplier Device Package: SC-70-5
Input Logic Level - High: 1.5V
Input Logic Level - Low: 0.5V
Max Propagation Delay @ V, Max CL: 17ns @ 6V, 50pF
Number of Circuits: 1
Current - Quiescent (Max): 1 µA
Description: IC GATE AND 1CH 2-INP SC70-5
Packaging: Cut Tape (CT)
Package / Case: 5-TSSOP, SC-70-5, SOT-353
Mounting Type: Surface Mount
Logic Type: AND Gate
Operating Temperature: -40°C ~ 85°C
Voltage - Supply: 2V ~ 6V
Current - Output High, Low: 2.6mA, 2.6mA
Number of Inputs: 2
Supplier Device Package: SC-70-5
Input Logic Level - High: 1.5V
Input Logic Level - Low: 0.5V
Max Propagation Delay @ V, Max CL: 17ns @ 6V, 50pF
Number of Circuits: 1
Current - Quiescent (Max): 1 µA
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| NC7S32L6X |
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Виробник: onsemi
Description: IC GATE OR 1CH 2-INP 6MICROPAK
Packaging: Cut Tape (CT)
Package / Case: 6-UFDFN
Mounting Type: Surface Mount
Logic Type: OR Gate
Operating Temperature: -40°C ~ 85°C
Voltage - Supply: 2V ~ 6V
Current - Output High, Low: 2.6mA, 2.6mA
Number of Inputs: 2
Supplier Device Package: 6-MicroPak
Input Logic Level - High: 1.5V
Input Logic Level - Low: 0.5V
Max Propagation Delay @ V, Max CL: 17ns @ 6V, 50pF
Part Status: Obsolete
Number of Circuits: 1
Current - Quiescent (Max): 1 µA
Description: IC GATE OR 1CH 2-INP 6MICROPAK
Packaging: Cut Tape (CT)
Package / Case: 6-UFDFN
Mounting Type: Surface Mount
Logic Type: OR Gate
Operating Temperature: -40°C ~ 85°C
Voltage - Supply: 2V ~ 6V
Current - Output High, Low: 2.6mA, 2.6mA
Number of Inputs: 2
Supplier Device Package: 6-MicroPak
Input Logic Level - High: 1.5V
Input Logic Level - Low: 0.5V
Max Propagation Delay @ V, Max CL: 17ns @ 6V, 50pF
Part Status: Obsolete
Number of Circuits: 1
Current - Quiescent (Max): 1 µA
на замовлення 95000 шт:
термін постачання 21-31 дні (днів)| Кількість | Ціна |
|---|---|
| 8+ | 45.99 грн |
| NC7SZ04L6X |
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Виробник: onsemi
Description: IC INVERTER 1CH 1-INP 6MICROPAK
Packaging: Cut Tape (CT)
Package / Case: 6-UFDFN
Mounting Type: Surface Mount
Logic Type: Inverter
Operating Temperature: -40°C ~ 85°C
Voltage - Supply: 1.65V ~ 5.5V
Current - Output High, Low: 32mA, 32mA
Number of Inputs: 1
Supplier Device Package: 6-MicroPak
Max Propagation Delay @ V, Max CL: 4.3ns @ 5V, 50pF
Number of Circuits: 1
Current - Quiescent (Max): 2 µA
Description: IC INVERTER 1CH 1-INP 6MICROPAK
Packaging: Cut Tape (CT)
Package / Case: 6-UFDFN
Mounting Type: Surface Mount
Logic Type: Inverter
Operating Temperature: -40°C ~ 85°C
Voltage - Supply: 1.65V ~ 5.5V
Current - Output High, Low: 32mA, 32mA
Number of Inputs: 1
Supplier Device Package: 6-MicroPak
Max Propagation Delay @ V, Max CL: 4.3ns @ 5V, 50pF
Number of Circuits: 1
Current - Quiescent (Max): 2 µA
на замовлення 261232 шт:
термін постачання 21-31 дні (днів)| Кількість | Ціна |
|---|---|
| 20+ | 17.03 грн |
| 31+ | 10.91 грн |
| 35+ | 9.64 грн |
| 100+ | 7.73 грн |
| 250+ | 7.10 грн |
| 500+ | 6.73 грн |
| 1000+ | 6.31 грн |
| 2500+ | 6.12 грн |
| NC7SZ332L6X |
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Виробник: onsemi
Description: IC GATE OR 1CH 3-INP 6MICROPAK
Packaging: Cut Tape (CT)
Package / Case: 6-UFDFN
Mounting Type: Surface Mount
Logic Type: OR Gate
Operating Temperature: -40°C ~ 85°C
Voltage - Supply: 1.65V ~ 5.5V
Current - Output High, Low: 32mA, 32mA
Number of Inputs: 3
Supplier Device Package: 6-MicroPak
Max Propagation Delay @ V, Max CL: 7ns @ 5V, 50pF
Number of Circuits: 1
Current - Quiescent (Max): 2 µA
Description: IC GATE OR 1CH 3-INP 6MICROPAK
Packaging: Cut Tape (CT)
Package / Case: 6-UFDFN
Mounting Type: Surface Mount
Logic Type: OR Gate
Operating Temperature: -40°C ~ 85°C
Voltage - Supply: 1.65V ~ 5.5V
Current - Output High, Low: 32mA, 32mA
Number of Inputs: 3
Supplier Device Package: 6-MicroPak
Max Propagation Delay @ V, Max CL: 7ns @ 5V, 50pF
Number of Circuits: 1
Current - Quiescent (Max): 2 µA
на замовлення 10000 шт:
термін постачання 21-31 дні (днів)| Кількість | Ціна |
|---|---|
| 8+ | 45.99 грн |
| NZT44H8 |
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Виробник: onsemi
Description: TRANS NPN 60V 8A SOT223-4
Packaging: Cut Tape (CT)
Package / Case: TO-261-4, TO-261AA
Mounting Type: Surface Mount
Transistor Type: NPN
Operating Temperature: -55°C ~ 150°C (TJ)
Vce Saturation (Max) @ Ib, Ic: 1V @ 400mA, 8A
Current - Collector Cutoff (Max): 10µA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce: 40 @ 4A, 1V
Frequency - Transition: 50MHz
Supplier Device Package: SOT-223-4
Part Status: Obsolete
Current - Collector (Ic) (Max): 8 A
Voltage - Collector Emitter Breakdown (Max): 60 V
Power - Max: 1.5 W
Description: TRANS NPN 60V 8A SOT223-4
Packaging: Cut Tape (CT)
Package / Case: TO-261-4, TO-261AA
Mounting Type: Surface Mount
Transistor Type: NPN
Operating Temperature: -55°C ~ 150°C (TJ)
Vce Saturation (Max) @ Ib, Ic: 1V @ 400mA, 8A
Current - Collector Cutoff (Max): 10µA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce: 40 @ 4A, 1V
Frequency - Transition: 50MHz
Supplier Device Package: SOT-223-4
Part Status: Obsolete
Current - Collector (Ic) (Max): 8 A
Voltage - Collector Emitter Breakdown (Max): 60 V
Power - Max: 1.5 W
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| NZT45H8 |
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Виробник: onsemi
Description: TRANS PNP 60V 8A SOT223-4
Packaging: Cut Tape (CT)
Package / Case: TO-261-4, TO-261AA
Mounting Type: Surface Mount
Transistor Type: PNP
Operating Temperature: -55°C ~ 150°C (TJ)
Vce Saturation (Max) @ Ib, Ic: 1V @ 400mA, 8A
Current - Collector Cutoff (Max): 10µA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce: 40 @ 4A, 1V
Frequency - Transition: 40MHz
Supplier Device Package: SOT-223-4
Part Status: Obsolete
Current - Collector (Ic) (Max): 8 A
Voltage - Collector Emitter Breakdown (Max): 60 V
Power - Max: 1.5 W
Description: TRANS PNP 60V 8A SOT223-4
Packaging: Cut Tape (CT)
Package / Case: TO-261-4, TO-261AA
Mounting Type: Surface Mount
Transistor Type: PNP
Operating Temperature: -55°C ~ 150°C (TJ)
Vce Saturation (Max) @ Ib, Ic: 1V @ 400mA, 8A
Current - Collector Cutoff (Max): 10µA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce: 40 @ 4A, 1V
Frequency - Transition: 40MHz
Supplier Device Package: SOT-223-4
Part Status: Obsolete
Current - Collector (Ic) (Max): 8 A
Voltage - Collector Emitter Breakdown (Max): 60 V
Power - Max: 1.5 W
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| NZT605 |
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Виробник: onsemi
Description: TRANS NPN DARL 110V 1.5A SOT-223
Packaging: Cut Tape (CT)
Package / Case: TO-261-4, TO-261AA
Mounting Type: Surface Mount
Transistor Type: NPN - Darlington
Operating Temperature: -55°C ~ 150°C (TJ)
Vce Saturation (Max) @ Ib, Ic: 1.5V @ 1mA, 1A
Current - Collector Cutoff (Max): 10nA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce: 2000 @ 1A, 5V
Frequency - Transition: 150MHz
Supplier Device Package: SOT-223-4
Current - Collector (Ic) (Max): 1.5 A
Voltage - Collector Emitter Breakdown (Max): 110 V
Power - Max: 1 W
Description: TRANS NPN DARL 110V 1.5A SOT-223
Packaging: Cut Tape (CT)
Package / Case: TO-261-4, TO-261AA
Mounting Type: Surface Mount
Transistor Type: NPN - Darlington
Operating Temperature: -55°C ~ 150°C (TJ)
Vce Saturation (Max) @ Ib, Ic: 1.5V @ 1mA, 1A
Current - Collector Cutoff (Max): 10nA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce: 2000 @ 1A, 5V
Frequency - Transition: 150MHz
Supplier Device Package: SOT-223-4
Current - Collector (Ic) (Max): 1.5 A
Voltage - Collector Emitter Breakdown (Max): 110 V
Power - Max: 1 W
на замовлення 14397 шт:
термін постачання 21-31 дні (днів)| Кількість | Ціна |
|---|---|
| 6+ | 61.32 грн |
| 10+ | 36.66 грн |
| 100+ | 23.68 грн |
| 500+ | 17.00 грн |
| 1000+ | 15.32 грн |
| 2000+ | 13.90 грн |
| 6N136SDM |
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Виробник: onsemi
Description: OPTOISO 5KV TRANS W/BASE 8-SMD
Packaging: Cut Tape (CT)
Package / Case: 8-SMD, Gull Wing
Output Type: Transistor with Base
Mounting Type: Surface Mount
Operating Temperature: -40°C ~ 100°C
Voltage - Forward (Vf) (Typ): 1.45V
Input Type: DC
Current - Output / Channel: 8mA
Voltage - Isolation: 5000Vrms
Current Transfer Ratio (Min): 19% @ 16mA
Current Transfer Ratio (Max): 50% @ 16mA
Supplier Device Package: 8-SMD
Voltage - Output (Max): 20V
Turn On / Turn Off Time (Typ): 250ns, 260ns
Part Status: Active
Number of Channels: 1
Current - DC Forward (If) (Max): 25 mA
Description: OPTOISO 5KV TRANS W/BASE 8-SMD
Packaging: Cut Tape (CT)
Package / Case: 8-SMD, Gull Wing
Output Type: Transistor with Base
Mounting Type: Surface Mount
Operating Temperature: -40°C ~ 100°C
Voltage - Forward (Vf) (Typ): 1.45V
Input Type: DC
Current - Output / Channel: 8mA
Voltage - Isolation: 5000Vrms
Current Transfer Ratio (Min): 19% @ 16mA
Current Transfer Ratio (Max): 50% @ 16mA
Supplier Device Package: 8-SMD
Voltage - Output (Max): 20V
Turn On / Turn Off Time (Typ): 250ns, 260ns
Part Status: Active
Number of Channels: 1
Current - DC Forward (If) (Max): 25 mA
на замовлення 250375 шт:
термін постачання 21-31 дні (днів)| Кількість | Ціна |
|---|---|
| 3+ | 122.63 грн |
| 10+ | 84.14 грн |
| 100+ | 63.62 грн |
| 500+ | 51.20 грн |
| FAN3214TMX |
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Виробник: onsemi
Description: IC GATE DRVR LOW-SIDE 8SOIC
Packaging: Cut Tape (CT)
Package / Case: 8-SOIC (0.154", 3.90mm Width)
Mounting Type: Surface Mount
Operating Temperature: -40°C ~ 125°C (TA)
Voltage - Supply: 4.5V ~ 18V
Input Type: Non-Inverting
Supplier Device Package: 8-SOIC
Rise / Fall Time (Typ): 12ns, 9ns
Channel Type: Synchronous
Driven Configuration: Low-Side
Number of Drivers: 2
Gate Type: N-Channel MOSFET
Logic Voltage - VIL, VIH: 0.8V, 2V
Current - Peak Output (Source, Sink): 5A, 5A
Part Status: Active
DigiKey Programmable: Not Verified
Description: IC GATE DRVR LOW-SIDE 8SOIC
Packaging: Cut Tape (CT)
Package / Case: 8-SOIC (0.154", 3.90mm Width)
Mounting Type: Surface Mount
Operating Temperature: -40°C ~ 125°C (TA)
Voltage - Supply: 4.5V ~ 18V
Input Type: Non-Inverting
Supplier Device Package: 8-SOIC
Rise / Fall Time (Typ): 12ns, 9ns
Channel Type: Synchronous
Driven Configuration: Low-Side
Number of Drivers: 2
Gate Type: N-Channel MOSFET
Logic Voltage - VIL, VIH: 0.8V, 2V
Current - Peak Output (Source, Sink): 5A, 5A
Part Status: Active
DigiKey Programmable: Not Verified
на замовлення 300669 шт:
термін постачання 21-31 дні (днів)| Кількість | Ціна |
|---|---|
| 2+ | 194.16 грн |
| 10+ | 117.43 грн |
| 25+ | 99.23 грн |
| 100+ | 73.73 грн |
| 250+ | 64.20 грн |
| 500+ | 58.35 грн |
| 1000+ | 52.56 грн |
































