| Фото | Назва | Виробник | Інформація | Доступність | Ціна без ПДВ | ||||||||||||||||
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FAN7085MX-GF085 | onsemi |
 Description: IC GATE DRVR HIGH-SIDE 8SOICQualification: AEC-Q100 Grade: Automotive DigiKey Programmable: Not Verified Part Status: Active Current - Peak Output (Source, Sink): 450mA, 450mA Gate Type: IGBT, MOSFET (N-Channel) Number of Drivers: 1 Driven Configuration: High-Side Channel Type: Single Rise / Fall Time (Typ): 65ns, 25ns Supplier Device Package: 8-SOIC High Side Voltage - Max (Bootstrap): 300 V Input Type: Inverting Voltage - Supply: 4.5V ~ 20V Operating Temperature: -40°C ~ 150°C (TJ) Mounting Type: Surface Mount Package / Case: 8-SOIC (0.154", 3.90mm Width) Packaging: Cut Tape (CT) |
на замовлення 3533 шт: термін постачання 21-31 дні (днів) |
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FAN73901MX | onsemi |
Description: IC GATE DRVR HALF-BRIDGE 8SOIC Packaging: Cut Tape (CT) Package / Case: 8-SOIC (0.154", 3.90mm Width) Mounting Type: Surface Mount Operating Temperature: -40°C ~ 150°C (TJ) Voltage - Supply: 10V ~ 20V Input Type: Non-Inverting High Side Voltage - Max (Bootstrap): 600 V Supplier Device Package: 8-SOIC Rise / Fall Time (Typ): 25ns, 20ns Channel Type: Independent Driven Configuration: Half-Bridge Number of Drivers: 2 Gate Type: IGBT, MOSFET (N-Channel) Logic Voltage - VIL, VIH: 1.2V, 2.5V Current - Peak Output (Source, Sink): 2.5A, 2.5A Part Status: Last Time Buy DigiKey Programmable: Not Verified |
на замовлення 8835 шт: термін постачання 21-31 дні (днів) |
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FAN73932MX | onsemi |
Description: IC GATE DRVR HALF-BRIDGE 8SOP Package / Case: 8-SOIC (0.154", 3.90mm Width) Packaging: Cut Tape (CT) DigiKey Programmable: Not Verified Part Status: Last Time Buy Current - Peak Output (Source, Sink): 2.5A, 2.5A Logic Voltage - VIL, VIH: 0.8V, 2.5V Gate Type: IGBT, N-Channel MOSFET Number of Drivers: 2 Driven Configuration: Half-Bridge Channel Type: Synchronous Rise / Fall Time (Typ): 25ns, 20ns Supplier Device Package: 8-SOIC High Side Voltage - Max (Bootstrap): 600 V Input Type: Non-Inverting Voltage - Supply: 10V ~ 20V Operating Temperature: -40°C ~ 150°C (TJ) Mounting Type: Surface Mount |
на замовлення 203 шт: термін постачання 21-31 дні (днів) |
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FAN73933MX | onsemi |
Description: IC GATE DRVR HALF-BRIDGE 14SOP Part Status: Last Time Buy Current - Peak Output (Source, Sink): 2.5A, 2.5A Logic Voltage - VIL, VIH: 0.8V, 2.5V Gate Type: IGBT, MOSFET (N-Channel) Number of Drivers: 2 Driven Configuration: Half-Bridge Channel Type: Independent Rise / Fall Time (Typ): 40ns, 20ns Supplier Device Package: 14-SOP High Side Voltage - Max (Bootstrap): 600 V Input Type: Non-Inverting Voltage - Supply: 10V ~ 20V Operating Temperature: -40°C ~ 150°C (TJ) Mounting Type: Surface Mount Package / Case: 14-SOIC (0.154", 3.90mm Width) Packaging: Cut Tape (CT) DigiKey Programmable: Not Verified |
на замовлення 10654 шт: термін постачання 21-31 дні (днів) |
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FDD3N50NZTM | onsemi |
Description: MOSFET N-CH 500V 2.5A DPAK Input Capacitance (Ciss) (Max) @ Vds: 280 pF @ 25 V Gate Charge (Qg) (Max) @ Vgs: 8 nC @ 10 V Drain to Source Voltage (Vdss): 500 V Vgs (Max): ±25V Drive Voltage (Max Rds On, Min Rds On): 10V Supplier Device Package: TO-252AA Vgs(th) (Max) @ Id: 5V @ 250µA Power Dissipation (Max): 40W (Tc) Rds On (Max) @ Id, Vgs: 2.5Ohm @ 1.25A, 10V Current - Continuous Drain (Id) @ 25°C: 2.5A (Tc) FET Type: N-Channel Technology: MOSFET (Metal Oxide) Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Surface Mount Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63 Packaging: Cut Tape (CT) |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||||||||||
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FDMS7608S | onsemi |
Description: MOSFET 2N-CH 30V 12A/15A POWER56 Drain to Source Voltage (Vdss): 30V Power - Max: 1W Technology: MOSFET (Metal Oxide) Operating Temperature: -55°C ~ 150°C (TJ) Configuration: 2 N-Channel (Dual) Mounting Type: Surface Mount Package / Case: 8-PowerWDFN Packaging: Cut Tape (CT) Supplier Device Package: Power56 Vgs(th) (Max) @ Id: 3V @ 250µA FET Feature: Logic Level Gate Gate Charge (Qg) (Max) @ Vgs: 24nC @ 10V Rds On (Max) @ Id, Vgs: 10mOhm @ 12A, 10V Input Capacitance (Ciss) (Max) @ Vds: 1510pF @ 15V Current - Continuous Drain (Id) @ 25°C: 12A, 15A |
на замовлення 26301 шт: термін постачання 21-31 дні (днів) |
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FQD2P40TM | onsemi |
Description: MOSFET P-CH 400V 1.56A DPAK Packaging: Cut Tape (CT) Gate Charge (Qg) (Max) @ Vgs: 13 nC @ 10 V Drain to Source Voltage (Vdss): 400 V Vgs (Max): ±30V Drive Voltage (Max Rds On, Min Rds On): 10V Supplier Device Package: TO-252AA Vgs(th) (Max) @ Id: 5V @ 250µA Power Dissipation (Max): 2.5W (Ta), 38W (Tc) Rds On (Max) @ Id, Vgs: 6.5Ohm @ 780mA, 10V Current - Continuous Drain (Id) @ 25°C: 1.56A (Tc) FET Type: P-Channel Technology: MOSFET (Metal Oxide) Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Surface Mount Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63 Input Capacitance (Ciss) (Max) @ Vds: 350 pF @ 25 V |
на замовлення 4902 шт: термін постачання 21-31 дні (днів) |
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KSC5402DTF | onsemi |
Description: TRANS NPN 525V 2A TO252AA Power - Max: 30 W Voltage - Collector Emitter Breakdown (Max): 525 V Current - Collector (Ic) (Max): 2 A Supplier Device Package: TO-252AA Frequency - Transition: 11MHz DC Current Gain (hFE) (Min) @ Ic, Vce: 6 @ 1A, 1V Current - Collector Cutoff (Max): 250µA Vce Saturation (Max) @ Ib, Ic: 750mV @ 200mA, 1A Operating Temperature: 150°C (TJ) Transistor Type: NPN Mounting Type: Surface Mount Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63 Packaging: Cut Tape (CT) |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||||||||||
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FAN5624UMPX | onsemi |
Description: IC LED DRV LIN SGL WR 10UMLP Type: Linear Number of Outputs: 4 Mounting Type: Surface Mount Package / Case: 10-UFQFN Packaging: Cut Tape (CT) Voltage - Supply (Max): 5.5V Voltage - Supply (Min): 2.7V Dimming: Single-Wire Supplier Device Package: 10-UMLP (1.8x1.4) Internal Switch(s): Yes Current - Output / Channel: 30mA Applications: Backlight Operating Temperature: -40°C ~ 85°C (TA) |
на замовлення 4177 шт: термін постачання 21-31 дні (днів) |
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FDC5661N-F085 | onsemi |
Description: MOSFET N-CH 60V 4.3A SUPERSOT6 Vgs(th) (Max) @ Id: 3V @ 250µA Power Dissipation (Max): 1.6W (Ta) Rds On (Max) @ Id, Vgs: 47mOhm @ 4.3A, 10V Current - Continuous Drain (Id) @ 25°C: 4.3A (Ta) FET Type: N-Channel Technology: MOSFET (Metal Oxide) Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Surface Mount Package / Case: SOT-23-6 Thin, TSOT-23-6 Packaging: Cut Tape (CT) Qualification: AEC-Q101 Input Capacitance (Ciss) (Max) @ Vds: 763 pF @ 25 V Gate Charge (Qg) (Max) @ Vgs: 19 nC @ 10 V Drain to Source Voltage (Vdss): 60 V Vgs (Max): ±20V Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Grade: Automotive Supplier Device Package: SuperSOT™-6 |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||||||||||
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FDN8601 | onsemi |
Description: MOSFET N-CH 100V 2.7A SUPERSOT3 Input Capacitance (Ciss) (Max) @ Vds: 210 pF @ 50 V Gate Charge (Qg) (Max) @ Vgs: 5 nC @ 10 V Drain to Source Voltage (Vdss): 100 V Vgs (Max): ±20V Drive Voltage (Max Rds On, Min Rds On): 6V, 10V Part Status: Active Supplier Device Package: SOT-23-3 Vgs(th) (Max) @ Id: 4V @ 250µA Power Dissipation (Max): 1.5W (Ta) Rds On (Max) @ Id, Vgs: 109mOhm @ 1.5A, 10V Current - Continuous Drain (Id) @ 25°C: 2.7A (Ta) FET Type: N-Channel Technology: MOSFET (Metal Oxide) Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Surface Mount Package / Case: TO-236-3, SC-59, SOT-23-3 Packaging: Cut Tape (CT) |
на замовлення 11469 шт: термін постачання 21-31 дні (днів) |
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FDY302NZ | onsemi |
Description: MOSFET N-CH 20V 600MA SC89-3 Rds On (Max) @ Id, Vgs: 300mOhm @ 600mA, 4.5V Current - Continuous Drain (Id) @ 25°C: 600mA (Ta) FET Type: N-Channel Technology: MOSFET (Metal Oxide) Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Surface Mount Package / Case: SC-89, SOT-490 Packaging: Cut Tape (CT) Input Capacitance (Ciss) (Max) @ Vds: 60 pF @ 10 V Gate Charge (Qg) (Max) @ Vgs: 1.1 nC @ 4.5 V Drain to Source Voltage (Vdss): 20 V Vgs (Max): ±12V Drive Voltage (Max Rds On, Min Rds On): 1.8V, 4.5V Part Status: Active Supplier Device Package: SC-89-3 Vgs(th) (Max) @ Id: 1.5V @ 250µA Power Dissipation (Max): 625mW (Ta) |
на замовлення 6386 шт: термін постачання 21-31 дні (днів) |
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FPF1038UCX | onsemi |
Description: IC PWR SWITCH P-CHAN 1:1 6WLCSP |
на замовлення 25550 шт: термін постачання 21-31 дні (днів) |
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FPF1204UCX | onsemi |
Description: IC PWR SWITCH P-CHAN 1:1 4WLCSP Packaging: Cut Tape (CT) Features: Load Discharge, Slew Rate Controlled Package / Case: 4-UFBGA, WLCSP Output Type: P-Channel Mounting Type: Surface Mount Number of Outputs: 1 Interface: On/Off Switch Type: General Purpose Operating Temperature: -40°C ~ 85°C (TA) Output Configuration: High Side Rds On (Typ): 45mOhm Input Type: Non-Inverting Voltage - Load: 1.2V ~ 5.5V Voltage - Supply (Vcc/Vdd): Not Required Current - Output (Max): 2.2A Ratio - Input:Output: 1:1 Supplier Device Package: 4-WLCSP (0.76x0.76) |
на замовлення 38225 шт: термін постачання 21-31 дні (днів) |
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FSSD06UMX | onsemi |
Description: IC MULTIPLEXER 24UMLP DigiKey Programmable: Not Verified Supplier Device Package: 24-UMLP (3.4x2.5) Applications: Cell Phones, Digital Cameras, Media Players Type: Multiplexer Mounting Type: Surface Mount Package / Case: 24-UFQFN Packaging: Cut Tape (CT) |
на замовлення 7834 шт: термін постачання 21-31 дні (днів) |
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FSUSB63UMX | onsemi |
Description: IC USB 2.0 SW & MUX 3:1 12-UMLP Multiplexer/Demultiplexer Circuit: 3:1 Voltage - Supply, Single (V+): 2.7V ~ 4.4V Supplier Device Package: 12-UMLP (1.8x1.8) -3db Bandwidth: 830MHz On-State Resistance (Max): 7.8Ohm Applications: USB Operating Temperature: -40°C ~ 85°C (TA) Mounting Type: Surface Mount Package / Case: 12-UFQFN Features: Break-Before-Make, USB 2.0 Packaging: Cut Tape (CT) Number of Channels: 1 Part Status: Last Time Buy |
на замовлення 9963 шт: термін постачання 21-31 дні (днів) |
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LM431SBCM32X | onsemi |
Description: IC VREF SHUNT ADJ 1% SOT23-3 Voltage - Output (Max): 36 V Current - Output: 100 mA Current - Cathode: 1 mA Part Status: Active Voltage - Output (Min/Fixed): 2.495V Supplier Device Package: SOT-23-3 Operating Temperature: -25°C ~ 85°C (TA) Reference Type: Shunt Mounting Type: Surface Mount Output Type: Adjustable Temperature Coefficient: 50ppm/°C Typical Package / Case: TO-236-3, SC-59, SOT-23-3 Tolerance: ±1% Packaging: Cut Tape (CT) |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||||||||||
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NC7SZ125FHX | onsemi |
Description: IC BUFF 1.65V 6-MICROPAK2 Packaging: Cut Tape (CT) Package / Case: 6-UFDFN Output Type: 3-State Mounting Type: Surface Mount Number of Elements: 1 Logic Type: Buffer, Non-Inverting Operating Temperature: -40°C ~ 85°C (TA) Voltage - Supply: 1.65V ~ 5.5V Number of Bits per Element: 1 Current - Output High, Low: 32mA, 32mA Supplier Device Package: 6-MicroPak2™ Part Status: Obsolete |
на замовлення 635 шт: термін постачання 21-31 дні (днів) |
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QSB34CZR | onsemi |
Description: SENSOR PHOTODIODE 940NM 2SMD Packaging: Cut Tape (CT) Package / Case: 2-SMD, Z-Bend Wavelength: 940nm Mounting Type: Surface Mount Diode Type: Pin Operating Temperature: -25°C ~ 85°C Response Time: 50ns Viewing Angle: 120° Spectral Range: 400nm ~ 1100nm Active Area: 6.5mm² Current - Dark (Typ): 30nA Part Status: Active Voltage - DC Reverse (Vr) (Max): 32 V |
на замовлення 218 шт: термін постачання 21-31 дні (днів) |
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2N3904TAR | onsemi |
Description: TRANS NPN 40V 0.2A TO-92-3 Packaging: Cut Tape (CT) Package / Case: TO-226-3, TO-92-3 (TO-226AA) Formed Leads Mounting Type: Through Hole Transistor Type: NPN Operating Temperature: -55°C ~ 150°C (TJ) Vce Saturation (Max) @ Ib, Ic: 300mV @ 5mA, 50mA DC Current Gain (hFE) (Min) @ Ic, Vce: 100 @ 10mA, 1V Frequency - Transition: 300MHz Supplier Device Package: TO-92-3 Part Status: Active Current - Collector (Ic) (Max): 200 mA Voltage - Collector Emitter Breakdown (Max): 40 V Power - Max: 625 mW |
на замовлення 734 шт: термін постачання 21-31 дні (днів) |
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2N6517TA | onsemi |
Description: TRANS NPN 350V 0.5A TO-92-3 Packaging: Cut Tape (CT) Package / Case: TO-226-3, TO-92-3 (TO-226AA) Formed Leads Mounting Type: Through Hole Transistor Type: NPN Operating Temperature: 150°C (TJ) Vce Saturation (Max) @ Ib, Ic: 1V @ 5mA, 50mA Current - Collector Cutoff (Max): 50nA (ICBO) DC Current Gain (hFE) (Min) @ Ic, Vce: 20 @ 50mA, 10V Frequency - Transition: 200MHz Supplier Device Package: TO-92-3 Part Status: Active Current - Collector (Ic) (Max): 500 mA Voltage - Collector Emitter Breakdown (Max): 350 V Power - Max: 625 mW |
на замовлення 6196 шт: термін постачання 21-31 дні (днів) |
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BC546CTA | onsemi |
Description: TRANS NPN 65V 0.1A TO-92-3 Packaging: Cut Tape (CT) Package / Case: TO-226-3, TO-92-3 (TO-226AA) Formed Leads Mounting Type: Through Hole Transistor Type: NPN Operating Temperature: 150°C (TJ) Vce Saturation (Max) @ Ib, Ic: 600mV @ 5mA, 100mA Current - Collector Cutoff (Max): 15nA (ICBO) DC Current Gain (hFE) (Min) @ Ic, Vce: 420 @ 2mA, 5V Frequency - Transition: 300MHz Supplier Device Package: TO-92-3 Part Status: Active Current - Collector (Ic) (Max): 100 mA Voltage - Collector Emitter Breakdown (Max): 65 V Power - Max: 500 mW |
на замовлення 10311 шт: термін постачання 21-31 дні (днів) |
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BC550CTA | onsemi |
Description: TRANS NPN 45V 0.1A TO-92-3 Packaging: Cut Tape (CT) Package / Case: TO-226-3, TO-92-3 (TO-226AA) Formed Leads Mounting Type: Through Hole Transistor Type: NPN Operating Temperature: 150°C (TJ) Vce Saturation (Max) @ Ib, Ic: 600mV @ 5mA, 100mA Current - Collector Cutoff (Max): 15nA (ICBO) DC Current Gain (hFE) (Min) @ Ic, Vce: 420 @ 2mA, 5V Frequency - Transition: 300MHz Supplier Device Package: TO-92-3 Part Status: Active Current - Collector (Ic) (Max): 100 mA Voltage - Collector Emitter Breakdown (Max): 45 V Power - Max: 500 mW |
на замовлення 1403 шт: термін постачання 21-31 дні (днів) |
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BC557ATA | onsemi |
Description: TRANS PNP 45V 0.1A TO-92-3 Packaging: Cut Tape (CT) Package / Case: TO-226-3, TO-92-3 (TO-226AA) Formed Leads Mounting Type: Through Hole Transistor Type: PNP Operating Temperature: 150°C (TJ) Vce Saturation (Max) @ Ib, Ic: 650mV @ 5mA, 100mA Current - Collector Cutoff (Max): 15nA (ICBO) DC Current Gain (hFE) (Min) @ Ic, Vce: 110 @ 2mA, 5V Frequency - Transition: 150MHz Supplier Device Package: TO-92-3 Part Status: Active Current - Collector (Ic) (Max): 100 mA Voltage - Collector Emitter Breakdown (Max): 45 V Power - Max: 500 mW |
на замовлення 738 шт: термін постачання 21-31 дні (днів) |
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BC559BTA | onsemi |
Description: TRANS PNP 30V 0.1A TO-92-3 Packaging: Cut Tape (CT) Package / Case: TO-226-3, TO-92-3 (TO-226AA) Formed Leads Mounting Type: Through Hole Transistor Type: PNP Operating Temperature: 150°C (TJ) Vce Saturation (Max) @ Ib, Ic: 650mV @ 5mA, 100mA Current - Collector Cutoff (Max): 15nA (ICBO) DC Current Gain (hFE) (Min) @ Ic, Vce: 200 @ 2mA, 5V Frequency - Transition: 150MHz Supplier Device Package: TO-92-3 Part Status: Active Current - Collector (Ic) (Max): 100 mA Voltage - Collector Emitter Breakdown (Max): 30 V Power - Max: 500 mW |
на замовлення 63979 шт: термін постачання 21-31 дні (днів) |
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BC559CTA | onsemi |
Description: TRANS PNP 30V 0.1A TO-92-3 Packaging: Cut Tape (CT) Package / Case: TO-226-3, TO-92-3 (TO-226AA) Formed Leads Mounting Type: Through Hole Transistor Type: PNP Operating Temperature: 150°C (TJ) Vce Saturation (Max) @ Ib, Ic: 650mV @ 5mA, 100mA Current - Collector Cutoff (Max): 15nA (ICBO) DC Current Gain (hFE) (Min) @ Ic, Vce: 420 @ 2mA, 5V Frequency - Transition: 150MHz Supplier Device Package: TO-92-3 Part Status: Active Current - Collector (Ic) (Max): 100 mA Voltage - Collector Emitter Breakdown (Max): 30 V Power - Max: 500 mW |
на замовлення 1723 шт: термін постачання 21-31 дні (днів) |
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J176-D74Z | onsemi |
Description: JFET P-CH 30V TO92-3 Current - Drain (Idss) @ Vds (Vgs=0): 2 mA @ 15 V Voltage - Cutoff (VGS off) @ Id: 1 V @ 10 nA Resistance - RDS(On): 250 Ohms Power - Max: 350 mW Part Status: Active Supplier Device Package: TO-92-3 Voltage - Breakdown (V(BR)GSS): 30 V Package / Case: TO-226-3, TO-92-3 (TO-226AA) Formed Leads Packaging: Cut Tape (CT) FET Type: P-Channel Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Through Hole |
на замовлення 3711 шт: термін постачання 21-31 дні (днів) |
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KSA1015YTA | onsemi |
Description: TRANS PNP 50V 0.15A TO-92-3 Packaging: Cut Tape (CT) Package / Case: TO-226-3, TO-92-3 (TO-226AA) Formed Leads Mounting Type: Through Hole Transistor Type: PNP Operating Temperature: 150°C (TJ) Vce Saturation (Max) @ Ib, Ic: 300mV @ 10mA, 100mA Current - Collector Cutoff (Max): 100nA (ICBO) DC Current Gain (hFE) (Min) @ Ic, Vce: 120 @ 2mA, 6V Frequency - Transition: 80MHz Supplier Device Package: TO-92-3 Part Status: Active Current - Collector (Ic) (Max): 150 mA Voltage - Collector Emitter Breakdown (Max): 50 V Power - Max: 400 mW |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||||||||||
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KSA992FTA | onsemi |
Description: TRANS PNP 120V 0.05A TO-92-3 Packaging: Cut Tape (CT) Package / Case: TO-226-3, TO-92-3 (TO-226AA) Formed Leads Mounting Type: Through Hole Transistor Type: PNP Operating Temperature: 150°C (TJ) Vce Saturation (Max) @ Ib, Ic: 300mV @ 1mA, 10mA Current - Collector Cutoff (Max): 1µA DC Current Gain (hFE) (Min) @ Ic, Vce: 300 @ 1mA, 6V Frequency - Transition: 100MHz Supplier Device Package: TO-92-3 Part Status: Active Current - Collector (Ic) (Max): 50 mA Voltage - Collector Emitter Breakdown (Max): 120 V Power - Max: 500 mW |
на замовлення 1297 шт: термін постачання 21-31 дні (днів) |
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KSC1845FTA | onsemi |
Description: TRANS NPN 120V 0.05A TO-92-3 Packaging: Cut Tape (CT) Package / Case: TO-226-3, TO-92-3 (TO-226AA) Formed Leads Mounting Type: Through Hole Transistor Type: NPN Operating Temperature: 150°C (TJ) Vce Saturation (Max) @ Ib, Ic: 300mV @ 1mA, 10mA Current - Collector Cutoff (Max): 50nA (ICBO) DC Current Gain (hFE) (Min) @ Ic, Vce: 300 @ 1mA, 6V Frequency - Transition: 110MHz Supplier Device Package: TO-92-3 Part Status: Active Current - Collector (Ic) (Max): 50 mA Voltage - Collector Emitter Breakdown (Max): 120 V Power - Max: 500 mW |
на замовлення 1530 шт: термін постачання 21-31 дні (днів) |
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KSC2316YTA | onsemi |
Description: TRANS NPN 120V 0.8A TO-92-3 Power - Max: 900 mW Voltage - Collector Emitter Breakdown (Max): 120 V Current - Collector (Ic) (Max): 800 mA Part Status: Obsolete Supplier Device Package: TO-92-3 Frequency - Transition: 120MHz DC Current Gain (hFE) (Min) @ Ic, Vce: 120 @ 100mA, 5V Current - Collector Cutoff (Max): 100nA (ICBO) Vce Saturation (Max) @ Ib, Ic: 1V @ 50mA, 500mA Operating Temperature: 150°C (TJ) Transistor Type: NPN Mounting Type: Through Hole Package / Case: TO-226-3, TO-92-3 Long Body, Formed Leads Packaging: Cut Tape (CT) |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||||||||||
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KSC2383OTA | onsemi |
Description: TRANS NPN 160V 1A TO-92-3 Packaging: Cut Tape (CT) Package / Case: TO-226-3, TO-92-3 Long Body, Formed Leads Mounting Type: Through Hole Transistor Type: NPN Operating Temperature: 150°C (TJ) Vce Saturation (Max) @ Ib, Ic: 1.5V @ 50mA, 500mA Current - Collector Cutoff (Max): 1µA (ICBO) DC Current Gain (hFE) (Min) @ Ic, Vce: 100 @ 200mA, 5V Frequency - Transition: 100MHz Supplier Device Package: TO-92-3 Part Status: Active Current - Collector (Ic) (Max): 1 A Voltage - Collector Emitter Breakdown (Max): 160 V Power - Max: 900 mW |
на замовлення 1037 шт: термін постачання 21-31 дні (днів) |
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KSC2383YTA | onsemi |
Description: TRANS NPN 160V 1A TO-92-3 Packaging: Cut Tape (CT) Package / Case: TO-226-3, TO-92-3 Long Body, Formed Leads Mounting Type: Through Hole Transistor Type: NPN Operating Temperature: 150°C (TJ) Vce Saturation (Max) @ Ib, Ic: 1.5V @ 50mA, 500mA Current - Collector Cutoff (Max): 1µA (ICBO) DC Current Gain (hFE) (Min) @ Ic, Vce: 160 @ 200mA, 5V Frequency - Transition: 100MHz Supplier Device Package: TO-92-3 Part Status: Active Current - Collector (Ic) (Max): 1 A Voltage - Collector Emitter Breakdown (Max): 160 V Power - Max: 900 mW |
на замовлення 900 шт: термін постачання 21-31 дні (днів) |
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SS8550DTA | onsemi |
Description: TRANS PNP 25V 1.5A TO-92-3 Packaging: Cut Tape (CT) Package / Case: TO-226-3, TO-92-3 (TO-226AA) Formed Leads Mounting Type: Through Hole Transistor Type: PNP Operating Temperature: 150°C (TJ) Vce Saturation (Max) @ Ib, Ic: 500mV @ 80mA, 800mA Current - Collector Cutoff (Max): 100nA DC Current Gain (hFE) (Min) @ Ic, Vce: 160 @ 100mA, 1V Frequency - Transition: 200MHz Supplier Device Package: TO-92-3 Part Status: Active Current - Collector (Ic) (Max): 1.5 A Voltage - Collector Emitter Breakdown (Max): 25 V Power - Max: 1 W |
на замовлення 2328 шт: термін постачання 21-31 дні (днів) |
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FNC42060F | onsemi |
Description: MODULE SPM 600V 20A 26PWRDIP Voltage: 600 V Current: 20 A Part Status: Not For New Designs Voltage - Isolation: 2000Vrms Configuration: 3 Phase Type: IGBT Mounting Type: Through Hole Package / Case: 26-PowerDIP Module (1.024", 26.00mm) Packaging: Tube |
на замовлення 648 шт: термін постачання 21-31 дні (днів) |
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HUF76633S3ST-F085 | onsemi |
Description: MOSFET N-CH 100V 39A D2PAK Qualification: AEC-Q101 Input Capacitance (Ciss) (Max) @ Vds: 1810 pF @ 25 V Gate Charge (Qg) (Max) @ Vgs: 63 nC @ 10 V Drain to Source Voltage (Vdss): 100 V Vgs (Max): ±16V Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Grade: Automotive Supplier Device Package: TO-263 (D2Pak) Vgs(th) (Max) @ Id: 3V @ 250µA Power Dissipation (Max): 183W (Tj) Rds On (Max) @ Id, Vgs: 35mOhm @ 39A, 10V Current - Continuous Drain (Id) @ 25°C: 39A (Tc) FET Type: N-Channel Technology: MOSFET (Metal Oxide) Operating Temperature: -55°C ~ 175°C (TJ) Mounting Type: Surface Mount Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB Packaging: Tape & Reel (TR) |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||||||||||
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FAN48632UC33X | onsemi |
Description: IC REG CONV GSM PA 1OUT 16WLCSP Operating Temperature: -40°C ~ 85°C Voltage - Input: 2.35V ~ 5.5V Number of Outputs: 1 Mounting Type: Surface Mount Voltage - Output: 3.3V, 3.49V Package / Case: 16-UFBGA, WLCSP Packaging: Tape & Reel (TR) Supplier Device Package: 16-WLCSP (1.78x1.78) Applications: Converter, GSM PA |
товару немає в наявності |
Мінімальне замовлення: 3000 шт В кошику од. на суму грн. | ||||||||||||||||
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HUF76419S3ST-F085 | onsemi |
Description: MOSFET N-CH 60V 29A D2PAK Qualification: AEC-Q101 Input Capacitance (Ciss) (Max) @ Vds: 870 pF @ 25 V Gate Charge (Qg) (Max) @ Vgs: 28.5 nC @ 10 V Drain to Source Voltage (Vdss): 60 V Vgs (Max): ±16V Drive Voltage (Max Rds On, Min Rds On): 10V Grade: Automotive Supplier Device Package: TO-263 (D2Pak) Vgs(th) (Max) @ Id: 3V @ 250µA Power Dissipation (Max): 100W (Tc) Rds On (Max) @ Id, Vgs: 35mOhm @ 29A, 10V Current - Continuous Drain (Id) @ 25°C: 29A (Tc) FET Type: N-Channel Technology: MOSFET (Metal Oxide) Operating Temperature: -55°C ~ 175°C (TJ) Mounting Type: Surface Mount Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB Packaging: Tape & Reel (TR) |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||||||||||
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FNC42060F2 | onsemi |
Description: MODULE SPM 600V 20A SPMAA Voltage: 600 V Current: 20 A Voltage - Isolation: 2000Vrms Configuration: 3 Phase Type: IGBT Mounting Type: Through Hole Package / Case: 26-PowerDIP Module (1.024", 26.00mm) Packaging: Tube |
на замовлення 40 шт: термін постачання 21-31 дні (днів) |
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FCH104N60F | onsemi |
Description: MOSFET N-CH 600V 37A TO247-3 Packaging: Tube Package / Case: TO-247-3 Mounting Type: Through Hole Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 37A (Tc) Rds On (Max) @ Id, Vgs: 104mOhm @ 18.5A, 10V Power Dissipation (Max): 357W (Tc) Vgs(th) (Max) @ Id: 5V @ 250µA Supplier Device Package: TO-247-3 Part Status: Not For New Designs Drive Voltage (Max Rds On, Min Rds On): 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 600 V Gate Charge (Qg) (Max) @ Vgs: 139 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 5950 pF @ 100 V |
на замовлення 300 шт: термін постачання 21-31 дні (днів) |
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FSB50760SFT | onsemi |
Description: MOD SPM 600V 1A SPM5N-023 |
на замовлення 180 шт: термін постачання 21-31 дні (днів) |
В кошику од. на суму грн. | ||||||||||||||||
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FAN23SV06MPX | onsemi |
Description: IC REG BUCK ADJ 6A 34QFN Output Type: Adjustable Package / Case: 34-PowerTFQFN Packaging: Tape & Reel (TR) Voltage - Output (Max): 5.5V Synchronous Rectifier: Yes Supplier Device Package: 34-PQFN (5.5x5) Topology: Buck Voltage - Input (Max): 15V Frequency - Switching: 200kHz ~ 1.5MHz Output Configuration: Positive Operating Temperature: -40°C ~ 125°C (TJ) Current - Output: 6A Function: Step-Down Number of Outputs: 1 Mounting Type: Surface Mount Voltage - Output (Min/Fixed): 0.6V Voltage - Input (Min): 7V |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||||||||||
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FAN23SV06PMPX | onsemi |
Description: IC REG BUCK ADJ 6A 34QFN Voltage - Output (Min/Fixed): 0.6V Voltage - Input (Min): 7V Voltage - Output (Max): 5.5V Synchronous Rectifier: Yes Supplier Device Package: 34-PQFN (5.5x5) Topology: Buck Voltage - Input (Max): 15V Frequency - Switching: 200kHz ~ 1.5MHz Output Configuration: Positive Operating Temperature: -40°C ~ 125°C (TJ) Current - Output: 6A Function: Step-Down Number of Outputs: 1 Mounting Type: Surface Mount Output Type: Adjustable Package / Case: 34-PowerTFQFN Packaging: Tape & Reel (TR) |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||||||||||
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FAN23SV15MMPX | onsemi |
Description: IC REG BUCK ADJ 15A 34QFN Voltage - Output (Min/Fixed): 0.6V Voltage - Input (Min): 7V Voltage - Output (Max): 5.5V Synchronous Rectifier: Yes Supplier Device Package: 34-PQFN (5.5x5) Topology: Buck Voltage - Input (Max): 15V Frequency - Switching: 200kHz ~ 1MHz Output Configuration: Positive Operating Temperature: -40°C ~ 125°C (TJ) Current - Output: 15A Function: Step-Down Number of Outputs: 1 Mounting Type: Surface Mount Output Type: Adjustable Package / Case: 34-PowerTFQFN Packaging: Tape & Reel (TR) |
товару немає в наявності |
Мінімальне замовлення: 3000 шт В кошику од. на суму грн. | ||||||||||||||||
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FDMC8360L | onsemi |
Description: MOSFET N-CH 40V 27A/80A POWER33 Rds On (Max) @ Id, Vgs: 2.1mOhm @ 27A, 10V Current - Continuous Drain (Id) @ 25°C: 27A (Ta), 80A (Tc) FET Type: N-Channel Technology: MOSFET (Metal Oxide) Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Surface Mount Package / Case: 8-PowerWDFN Packaging: Tape & Reel (TR) Input Capacitance (Ciss) (Max) @ Vds: 5795 pF @ 20 V Gate Charge (Qg) (Max) @ Vgs: 80 nC @ 10 V Drain to Source Voltage (Vdss): 40 V Vgs (Max): ±20V Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Part Status: Active Supplier Device Package: Power33 Vgs(th) (Max) @ Id: 3V @ 250µA Power Dissipation (Max): 2.3W (Ta), 54W (Tc) |
товару немає в наявності |
Мінімальне замовлення: 3000 шт В кошику од. на суму грн. | ||||||||||||||||
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FDMC86570L | onsemi |
Description: MOSFET N-CH 60V 18A/56A POWER33 Input Capacitance (Ciss) (Max) @ Vds: 6705 pF @ 30 V Gate Charge (Qg) (Max) @ Vgs: 88 nC @ 10 V Drain to Source Voltage (Vdss): 60 V Vgs (Max): ±20V Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Supplier Device Package: Power33 Vgs(th) (Max) @ Id: 3V @ 250µA Power Dissipation (Max): 2.3W (Ta), 54W (Tc) Rds On (Max) @ Id, Vgs: 4.3mOhm @ 18A, 10V Current - Continuous Drain (Id) @ 25°C: 18A (Ta), 56A (Tc) FET Type: N-Channel Technology: MOSFET (Metal Oxide) Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Surface Mount Package / Case: 8-PowerWDFN Packaging: Tape & Reel (TR) |
на замовлення 3000 шт: термін постачання 21-31 дні (днів) |
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FDMS86350 | onsemi |
Description: MOSFET N-CH 80V 25A/130A POWER56 Packaging: Tape & Reel (TR) Package / Case: 8-PowerTDFN Mounting Type: Surface Mount Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 25A (Ta), 130A (Tc) Rds On (Max) @ Id, Vgs: 2.4mOhm @ 25A, 10V Power Dissipation (Max): 2.7W (Ta), 156W (Tc) Vgs(th) (Max) @ Id: 4.5V @ 250µA Supplier Device Package: 8-PQFN (5x6) Part Status: Active Drive Voltage (Max Rds On, Min Rds On): 8V, 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 80 V Gate Charge (Qg) (Max) @ Vgs: 155 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 10680 pF @ 40 V |
товару немає в наявності |
Мінімальне замовлення: 3000 шт В кошику од. на суму грн. | ||||||||||||||||
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FDMC86340 | onsemi |
Description: MOSFET N-CH 80V 14A/48A POWER33 Input Capacitance (Ciss) (Max) @ Vds: 3885 pF @ 40 V Gate Charge (Qg) (Max) @ Vgs: 53 nC @ 10 V Drain to Source Voltage (Vdss): 80 V Vgs (Max): ±20V Drive Voltage (Max Rds On, Min Rds On): 8V, 10V Supplier Device Package: Power33 Vgs(th) (Max) @ Id: 4V @ 250µA Power Dissipation (Max): 2.3W (Ta), 54W (Tc) Rds On (Max) @ Id, Vgs: 6.5mOhm @ 14A, 10V Current - Continuous Drain (Id) @ 25°C: 14A (Ta), 48A (Tc) FET Type: N-Channel Technology: MOSFET (Metal Oxide) Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Surface Mount Package / Case: 8-PowerWDFN Packaging: Cut Tape (CT) |
на замовлення 5281 шт: термін постачання 21-31 дні (днів) |
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FDMC86570L | onsemi |
Description: MOSFET N-CH 60V 18A/56A POWER33 Gate Charge (Qg) (Max) @ Vgs: 88 nC @ 10 V Drain to Source Voltage (Vdss): 60 V Vgs (Max): ±20V Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Supplier Device Package: Power33 Vgs(th) (Max) @ Id: 3V @ 250µA Power Dissipation (Max): 2.3W (Ta), 54W (Tc) Rds On (Max) @ Id, Vgs: 4.3mOhm @ 18A, 10V Current - Continuous Drain (Id) @ 25°C: 18A (Ta), 56A (Tc) FET Type: N-Channel Technology: MOSFET (Metal Oxide) Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Surface Mount Package / Case: 8-PowerWDFN Packaging: Cut Tape (CT) Input Capacitance (Ciss) (Max) @ Vds: 6705 pF @ 30 V |
на замовлення 4308 шт: термін постачання 21-31 дні (днів) |
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FDMC8360L | onsemi |
Description: MOSFET N-CH 40V 27A/80A POWER33 Mounting Type: Surface Mount Package / Case: 8-PowerWDFN Packaging: Cut Tape (CT) Input Capacitance (Ciss) (Max) @ Vds: 5795 pF @ 20 V Gate Charge (Qg) (Max) @ Vgs: 80 nC @ 10 V Drain to Source Voltage (Vdss): 40 V Vgs (Max): ±20V Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Part Status: Active Supplier Device Package: Power33 Vgs(th) (Max) @ Id: 3V @ 250µA Power Dissipation (Max): 2.3W (Ta), 54W (Tc) Rds On (Max) @ Id, Vgs: 2.1mOhm @ 27A, 10V Current - Continuous Drain (Id) @ 25°C: 27A (Ta), 80A (Tc) FET Type: N-Channel Technology: MOSFET (Metal Oxide) Operating Temperature: -55°C ~ 150°C (TJ) |
на замовлення 1059 шт: термін постачання 21-31 дні (днів) |
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FCPF190N60-F152 | onsemi |
Description: MOSFET N-CH 600V 20.2A TO220F Packaging: Tube Package / Case: TO-220-3 Full Pack Mounting Type: Through Hole Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 20.2A (Tc) Rds On (Max) @ Id, Vgs: 199mOhm @ 10A, 10V Power Dissipation (Max): 39W (Tc) Vgs(th) (Max) @ Id: 3.5V @ 250µA Supplier Device Package: TO-220F-3 Drive Voltage (Max Rds On, Min Rds On): 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 600 V Gate Charge (Qg) (Max) @ Vgs: 74 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 2950 pF @ 25 V |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||||||||||
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LV5680PGEVB | onsemi |
Description: BOARD EVAL FOR LV5680P Part Status: Active Channels per IC: 4 - Quad Supplied Contents: Board(s) Utilized IC / Part: LV5680P Board Type: Fully Populated Regulator Type: Positive Fixed and Adjustable Current - Output: 1.3A, 300mA, 300mA, 200mA Voltage - Input: 7.5V ~ 16V Packaging: Bulk |
на замовлення 2 шт: термін постачання 21-31 дні (днів) |
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LV5980MCGEVB | onsemi |
Description: EVAL BOARD FOR LV5980MC Contents: Board(s) Part Status: Active Outputs and Type: 1 Non-Isolated Output Main Purpose: DC/DC, Step Down Supplied Contents: Board(s) Utilized IC / Part: LV5980MC Board Type: Fully Populated Regulator Topology: Buck Frequency - Switching: 370kHz Current - Output: 3A Voltage - Input: 4.5V ~ 23V Voltage - Output: 5V Packaging: Bulk |
на замовлення 2 шт: термін постачання 21-31 дні (днів) |
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LV8829LFQAGEVK | onsemi |
Description: EVAL BOARD FOR LV8829LFQA Primary Attributes: Motors (BLDC) Supplied Contents: Board(s), Cable(s), Power Supply Utilized IC / Part: LV8829LFQA Type: Power Management Function: Motor Controller/Driver Packaging: Bulk |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||||||||||
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MC34063LBBGEVB | onsemi |
Description: EVAL BOARD FOR MC34063A Packaging: Bulk Voltage - Output: -12V Voltage - Input: 3V ~ 40V Current - Output: 1.5A Frequency - Switching: 100kHz Regulator Topology: Inverting Board Type: Fully Populated Utilized IC / Part: MC34063A Supplied Contents: Board(s) Main Purpose: DC/DC, Negative Inverter Outputs and Type: 1 Non-Isolated Output Part Status: Active Contents: Board(s) |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||||||||||
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NCL30081LEDGEVB | onsemi |
Description: EVAL BOARD FOR NCL30081 Outputs and Type: 1 Isolated Output Utilized IC / Part: NCL30081 Current - Output / Channel: 360mA Contents: Board(s) Voltage - Input: 90 ~ 265 VAC Voltage - Output: 9V ~ 10.5V Features: Dimmable Packaging: Bulk |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||||||||||
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NCL30082FLYGEVB | onsemi |
Description: EVAL BOARD FOR NCL30082 Outputs and Type: 1 Isolated Output Utilized IC / Part: NCL30082 Current - Output / Channel: 500mA Contents: Board(s) Voltage - Input: 100 ~ 265 VAC Voltage - Output: 14V ~ 17V Features: Dimmable Packaging: Bulk |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||||||||||
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NCN51206GEVB | onsemi |
Description: EVAL BOARD FOR NCN5120 Part Status: Obsolete Embedded: Yes, MCU, 16-Bit Secondary Attributes: On-Board LEDs Contents: Board(s) Supplied Contents: Board(s) Utilized IC / Part: NCN5120 Type: Interface Function: KNX Packaging: Bulk |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||||||||||
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NCN8024RDWGEVB | onsemi |
Description: BOARD EVAL FOR NCN8024RDW Embedded: No Supplied Contents: Board(s) Utilized IC / Part: NCN8024R Type: Interface Function: Smart Card Packaging: Bulk |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||||||||||
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NCP1072DIPGEVB | onsemi |
Description: EVAL BOARD FOR NCP1072 Packaging: Bulk Power - Output: 6W Outputs and Type: 1 Isolated Output Main Purpose: AC/DC, Secondary Side Utilized IC / Part: NCP1072 Regulator Topology: Flyback Frequency - Switching: 100kHz Contents: Board(s) Current - Output: 500mA Voltage - Input: 50 ~ 265 VAC Voltage - Output: 12V |
товару немає в наявності |
В кошику од. на суму грн. |
| FAN7085MX-GF085 |
|
Виробник: onsemi
Description: IC GATE DRVR HIGH-SIDE 8SOIC
Qualification: AEC-Q100
Grade: Automotive
DigiKey Programmable: Not Verified
Part Status: Active
Current - Peak Output (Source, Sink): 450mA, 450mA
Gate Type: IGBT, MOSFET (N-Channel)
Number of Drivers: 1
Driven Configuration: High-Side
Channel Type: Single
Rise / Fall Time (Typ): 65ns, 25ns
Supplier Device Package: 8-SOIC
High Side Voltage - Max (Bootstrap): 300 V
Input Type: Inverting
Voltage - Supply: 4.5V ~ 20V
Operating Temperature: -40°C ~ 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: 8-SOIC (0.154", 3.90mm Width)
Packaging: Cut Tape (CT)
Description: IC GATE DRVR HIGH-SIDE 8SOIC
Qualification: AEC-Q100
Grade: Automotive
DigiKey Programmable: Not Verified
Part Status: Active
Current - Peak Output (Source, Sink): 450mA, 450mA
Gate Type: IGBT, MOSFET (N-Channel)
Number of Drivers: 1
Driven Configuration: High-Side
Channel Type: Single
Rise / Fall Time (Typ): 65ns, 25ns
Supplier Device Package: 8-SOIC
High Side Voltage - Max (Bootstrap): 300 V
Input Type: Inverting
Voltage - Supply: 4.5V ~ 20V
Operating Temperature: -40°C ~ 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: 8-SOIC (0.154", 3.90mm Width)
Packaging: Cut Tape (CT)
на замовлення 3533 шт:
термін постачання 21-31 дні (днів)
| Кількість | Ціна без ПДВ |
|---|---|
| 2+ | 242.55 грн |
| 10+ | 149.54 грн |
| 25+ | 127.51 грн |
| 100+ | 96.33 грн |
| 250+ | 84.87 грн |
| 500+ | 77.82 грн |
| 1000+ | 70.74 грн |
| FAN73901MX |
|
Виробник: onsemi
Description: IC GATE DRVR HALF-BRIDGE 8SOIC
Packaging: Cut Tape (CT)
Package / Case: 8-SOIC (0.154", 3.90mm Width)
Mounting Type: Surface Mount
Operating Temperature: -40°C ~ 150°C (TJ)
Voltage - Supply: 10V ~ 20V
Input Type: Non-Inverting
High Side Voltage - Max (Bootstrap): 600 V
Supplier Device Package: 8-SOIC
Rise / Fall Time (Typ): 25ns, 20ns
Channel Type: Independent
Driven Configuration: Half-Bridge
Number of Drivers: 2
Gate Type: IGBT, MOSFET (N-Channel)
Logic Voltage - VIL, VIH: 1.2V, 2.5V
Current - Peak Output (Source, Sink): 2.5A, 2.5A
Part Status: Last Time Buy
DigiKey Programmable: Not Verified
Description: IC GATE DRVR HALF-BRIDGE 8SOIC
Packaging: Cut Tape (CT)
Package / Case: 8-SOIC (0.154", 3.90mm Width)
Mounting Type: Surface Mount
Operating Temperature: -40°C ~ 150°C (TJ)
Voltage - Supply: 10V ~ 20V
Input Type: Non-Inverting
High Side Voltage - Max (Bootstrap): 600 V
Supplier Device Package: 8-SOIC
Rise / Fall Time (Typ): 25ns, 20ns
Channel Type: Independent
Driven Configuration: Half-Bridge
Number of Drivers: 2
Gate Type: IGBT, MOSFET (N-Channel)
Logic Voltage - VIL, VIH: 1.2V, 2.5V
Current - Peak Output (Source, Sink): 2.5A, 2.5A
Part Status: Last Time Buy
DigiKey Programmable: Not Verified
на замовлення 8835 шт:
термін постачання 21-31 дні (днів)
| Кількість | Ціна без ПДВ |
|---|---|
| 3+ | 147.23 грн |
| 10+ | 105.14 грн |
| 25+ | 95.90 грн |
| 100+ | 80.50 грн |
| 250+ | 75.97 грн |
| 500+ | 73.24 грн |
| 1000+ | 69.83 грн |
| FAN73932MX |
|
Виробник: onsemi
Description: IC GATE DRVR HALF-BRIDGE 8SOP
Package / Case: 8-SOIC (0.154", 3.90mm Width)
Packaging: Cut Tape (CT)
DigiKey Programmable: Not Verified
Part Status: Last Time Buy
Current - Peak Output (Source, Sink): 2.5A, 2.5A
Logic Voltage - VIL, VIH: 0.8V, 2.5V
Gate Type: IGBT, N-Channel MOSFET
Number of Drivers: 2
Driven Configuration: Half-Bridge
Channel Type: Synchronous
Rise / Fall Time (Typ): 25ns, 20ns
Supplier Device Package: 8-SOIC
High Side Voltage - Max (Bootstrap): 600 V
Input Type: Non-Inverting
Voltage - Supply: 10V ~ 20V
Operating Temperature: -40°C ~ 150°C (TJ)
Mounting Type: Surface Mount
Description: IC GATE DRVR HALF-BRIDGE 8SOP
Package / Case: 8-SOIC (0.154", 3.90mm Width)
Packaging: Cut Tape (CT)
DigiKey Programmable: Not Verified
Part Status: Last Time Buy
Current - Peak Output (Source, Sink): 2.5A, 2.5A
Logic Voltage - VIL, VIH: 0.8V, 2.5V
Gate Type: IGBT, N-Channel MOSFET
Number of Drivers: 2
Driven Configuration: Half-Bridge
Channel Type: Synchronous
Rise / Fall Time (Typ): 25ns, 20ns
Supplier Device Package: 8-SOIC
High Side Voltage - Max (Bootstrap): 600 V
Input Type: Non-Inverting
Voltage - Supply: 10V ~ 20V
Operating Temperature: -40°C ~ 150°C (TJ)
Mounting Type: Surface Mount
на замовлення 203 шт:
термін постачання 21-31 дні (днів)
| Кількість | Ціна без ПДВ |
|---|---|
| 2+ | 172.03 грн |
| FAN73933MX |
|
Виробник: onsemi
Description: IC GATE DRVR HALF-BRIDGE 14SOP
Part Status: Last Time Buy
Current - Peak Output (Source, Sink): 2.5A, 2.5A
Logic Voltage - VIL, VIH: 0.8V, 2.5V
Gate Type: IGBT, MOSFET (N-Channel)
Number of Drivers: 2
Driven Configuration: Half-Bridge
Channel Type: Independent
Rise / Fall Time (Typ): 40ns, 20ns
Supplier Device Package: 14-SOP
High Side Voltage - Max (Bootstrap): 600 V
Input Type: Non-Inverting
Voltage - Supply: 10V ~ 20V
Operating Temperature: -40°C ~ 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: 14-SOIC (0.154", 3.90mm Width)
Packaging: Cut Tape (CT)
DigiKey Programmable: Not Verified
Description: IC GATE DRVR HALF-BRIDGE 14SOP
Part Status: Last Time Buy
Current - Peak Output (Source, Sink): 2.5A, 2.5A
Logic Voltage - VIL, VIH: 0.8V, 2.5V
Gate Type: IGBT, MOSFET (N-Channel)
Number of Drivers: 2
Driven Configuration: Half-Bridge
Channel Type: Independent
Rise / Fall Time (Typ): 40ns, 20ns
Supplier Device Package: 14-SOP
High Side Voltage - Max (Bootstrap): 600 V
Input Type: Non-Inverting
Voltage - Supply: 10V ~ 20V
Operating Temperature: -40°C ~ 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: 14-SOIC (0.154", 3.90mm Width)
Packaging: Cut Tape (CT)
DigiKey Programmable: Not Verified
на замовлення 10654 шт:
термін постачання 21-31 дні (днів)
| Кількість | Ціна без ПДВ |
|---|---|
| 2+ | 226.27 грн |
| 10+ | 139.39 грн |
| 25+ | 118.80 грн |
| 100+ | 89.57 грн |
| 250+ | 78.82 грн |
| 500+ | 72.20 грн |
| 1000+ | 65.57 грн |
| FDD3N50NZTM |
|
Виробник: onsemi
Description: MOSFET N-CH 500V 2.5A DPAK
Input Capacitance (Ciss) (Max) @ Vds: 280 pF @ 25 V
Gate Charge (Qg) (Max) @ Vgs: 8 nC @ 10 V
Drain to Source Voltage (Vdss): 500 V
Vgs (Max): ±25V
Drive Voltage (Max Rds On, Min Rds On): 10V
Supplier Device Package: TO-252AA
Vgs(th) (Max) @ Id: 5V @ 250µA
Power Dissipation (Max): 40W (Tc)
Rds On (Max) @ Id, Vgs: 2.5Ohm @ 1.25A, 10V
Current - Continuous Drain (Id) @ 25°C: 2.5A (Tc)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Packaging: Cut Tape (CT)
Description: MOSFET N-CH 500V 2.5A DPAK
Input Capacitance (Ciss) (Max) @ Vds: 280 pF @ 25 V
Gate Charge (Qg) (Max) @ Vgs: 8 nC @ 10 V
Drain to Source Voltage (Vdss): 500 V
Vgs (Max): ±25V
Drive Voltage (Max Rds On, Min Rds On): 10V
Supplier Device Package: TO-252AA
Vgs(th) (Max) @ Id: 5V @ 250µA
Power Dissipation (Max): 40W (Tc)
Rds On (Max) @ Id, Vgs: 2.5Ohm @ 1.25A, 10V
Current - Continuous Drain (Id) @ 25°C: 2.5A (Tc)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Packaging: Cut Tape (CT)
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| FDMS7608S |
|
Виробник: onsemi
Description: MOSFET 2N-CH 30V 12A/15A POWER56
Drain to Source Voltage (Vdss): 30V
Power - Max: 1W
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 150°C (TJ)
Configuration: 2 N-Channel (Dual)
Mounting Type: Surface Mount
Package / Case: 8-PowerWDFN
Packaging: Cut Tape (CT)
Supplier Device Package: Power56
Vgs(th) (Max) @ Id: 3V @ 250µA
FET Feature: Logic Level Gate
Gate Charge (Qg) (Max) @ Vgs: 24nC @ 10V
Rds On (Max) @ Id, Vgs: 10mOhm @ 12A, 10V
Input Capacitance (Ciss) (Max) @ Vds: 1510pF @ 15V
Current - Continuous Drain (Id) @ 25°C: 12A, 15A
Description: MOSFET 2N-CH 30V 12A/15A POWER56
Drain to Source Voltage (Vdss): 30V
Power - Max: 1W
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 150°C (TJ)
Configuration: 2 N-Channel (Dual)
Mounting Type: Surface Mount
Package / Case: 8-PowerWDFN
Packaging: Cut Tape (CT)
Supplier Device Package: Power56
Vgs(th) (Max) @ Id: 3V @ 250µA
FET Feature: Logic Level Gate
Gate Charge (Qg) (Max) @ Vgs: 24nC @ 10V
Rds On (Max) @ Id, Vgs: 10mOhm @ 12A, 10V
Input Capacitance (Ciss) (Max) @ Vds: 1510pF @ 15V
Current - Continuous Drain (Id) @ 25°C: 12A, 15A
на замовлення 26301 шт:
термін постачання 21-31 дні (днів)
| Кількість | Ціна без ПДВ |
|---|---|
| 4+ | 85.24 грн |
| 10+ | 66.93 грн |
| 100+ | 52.07 грн |
| 500+ | 41.42 грн |
| 1000+ | 33.74 грн |
| FQD2P40TM |
|
Виробник: onsemi
Description: MOSFET P-CH 400V 1.56A DPAK
Packaging: Cut Tape (CT)
Gate Charge (Qg) (Max) @ Vgs: 13 nC @ 10 V
Drain to Source Voltage (Vdss): 400 V
Vgs (Max): ±30V
Drive Voltage (Max Rds On, Min Rds On): 10V
Supplier Device Package: TO-252AA
Vgs(th) (Max) @ Id: 5V @ 250µA
Power Dissipation (Max): 2.5W (Ta), 38W (Tc)
Rds On (Max) @ Id, Vgs: 6.5Ohm @ 780mA, 10V
Current - Continuous Drain (Id) @ 25°C: 1.56A (Tc)
FET Type: P-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Input Capacitance (Ciss) (Max) @ Vds: 350 pF @ 25 V
Description: MOSFET P-CH 400V 1.56A DPAK
Packaging: Cut Tape (CT)
Gate Charge (Qg) (Max) @ Vgs: 13 nC @ 10 V
Drain to Source Voltage (Vdss): 400 V
Vgs (Max): ±30V
Drive Voltage (Max Rds On, Min Rds On): 10V
Supplier Device Package: TO-252AA
Vgs(th) (Max) @ Id: 5V @ 250µA
Power Dissipation (Max): 2.5W (Ta), 38W (Tc)
Rds On (Max) @ Id, Vgs: 6.5Ohm @ 780mA, 10V
Current - Continuous Drain (Id) @ 25°C: 1.56A (Tc)
FET Type: P-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Input Capacitance (Ciss) (Max) @ Vds: 350 pF @ 25 V
на замовлення 4902 шт:
термін постачання 21-31 дні (днів)
| Кількість | Ціна без ПДВ |
|---|---|
| 3+ | 109.26 грн |
| 10+ | 66.41 грн |
| 100+ | 44.16 грн |
| 500+ | 32.50 грн |
| 1000+ | 29.62 грн |
| KSC5402DTF |
|
Виробник: onsemi
Description: TRANS NPN 525V 2A TO252AA
Power - Max: 30 W
Voltage - Collector Emitter Breakdown (Max): 525 V
Current - Collector (Ic) (Max): 2 A
Supplier Device Package: TO-252AA
Frequency - Transition: 11MHz
DC Current Gain (hFE) (Min) @ Ic, Vce: 6 @ 1A, 1V
Current - Collector Cutoff (Max): 250µA
Vce Saturation (Max) @ Ib, Ic: 750mV @ 200mA, 1A
Operating Temperature: 150°C (TJ)
Transistor Type: NPN
Mounting Type: Surface Mount
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Packaging: Cut Tape (CT)
Description: TRANS NPN 525V 2A TO252AA
Power - Max: 30 W
Voltage - Collector Emitter Breakdown (Max): 525 V
Current - Collector (Ic) (Max): 2 A
Supplier Device Package: TO-252AA
Frequency - Transition: 11MHz
DC Current Gain (hFE) (Min) @ Ic, Vce: 6 @ 1A, 1V
Current - Collector Cutoff (Max): 250µA
Vce Saturation (Max) @ Ib, Ic: 750mV @ 200mA, 1A
Operating Temperature: 150°C (TJ)
Transistor Type: NPN
Mounting Type: Surface Mount
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Packaging: Cut Tape (CT)
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| FAN5624UMPX |
|
Виробник: onsemi
Description: IC LED DRV LIN SGL WR 10UMLP
Type: Linear
Number of Outputs: 4
Mounting Type: Surface Mount
Package / Case: 10-UFQFN
Packaging: Cut Tape (CT)
Voltage - Supply (Max): 5.5V
Voltage - Supply (Min): 2.7V
Dimming: Single-Wire
Supplier Device Package: 10-UMLP (1.8x1.4)
Internal Switch(s): Yes
Current - Output / Channel: 30mA
Applications: Backlight
Operating Temperature: -40°C ~ 85°C (TA)
Description: IC LED DRV LIN SGL WR 10UMLP
Type: Linear
Number of Outputs: 4
Mounting Type: Surface Mount
Package / Case: 10-UFQFN
Packaging: Cut Tape (CT)
Voltage - Supply (Max): 5.5V
Voltage - Supply (Min): 2.7V
Dimming: Single-Wire
Supplier Device Package: 10-UMLP (1.8x1.4)
Internal Switch(s): Yes
Current - Output / Channel: 30mA
Applications: Backlight
Operating Temperature: -40°C ~ 85°C (TA)
на замовлення 4177 шт:
термін постачання 21-31 дні (днів)
| Кількість | Ціна без ПДВ |
|---|---|
| 3+ | 114.69 грн |
| 10+ | 67.61 грн |
| 25+ | 56.53 грн |
| 100+ | 41.33 грн |
| 250+ | 35.56 грн |
| 500+ | 32.00 грн |
| 1000+ | 28.55 грн |
| 2500+ | 25.40 грн |
| FDC5661N-F085 |
|
Виробник: onsemi
Description: MOSFET N-CH 60V 4.3A SUPERSOT6
Vgs(th) (Max) @ Id: 3V @ 250µA
Power Dissipation (Max): 1.6W (Ta)
Rds On (Max) @ Id, Vgs: 47mOhm @ 4.3A, 10V
Current - Continuous Drain (Id) @ 25°C: 4.3A (Ta)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: SOT-23-6 Thin, TSOT-23-6
Packaging: Cut Tape (CT)
Qualification: AEC-Q101
Input Capacitance (Ciss) (Max) @ Vds: 763 pF @ 25 V
Gate Charge (Qg) (Max) @ Vgs: 19 nC @ 10 V
Drain to Source Voltage (Vdss): 60 V
Vgs (Max): ±20V
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Grade: Automotive
Supplier Device Package: SuperSOT™-6
Description: MOSFET N-CH 60V 4.3A SUPERSOT6
Vgs(th) (Max) @ Id: 3V @ 250µA
Power Dissipation (Max): 1.6W (Ta)
Rds On (Max) @ Id, Vgs: 47mOhm @ 4.3A, 10V
Current - Continuous Drain (Id) @ 25°C: 4.3A (Ta)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: SOT-23-6 Thin, TSOT-23-6
Packaging: Cut Tape (CT)
Qualification: AEC-Q101
Input Capacitance (Ciss) (Max) @ Vds: 763 pF @ 25 V
Gate Charge (Qg) (Max) @ Vgs: 19 nC @ 10 V
Drain to Source Voltage (Vdss): 60 V
Vgs (Max): ±20V
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Grade: Automotive
Supplier Device Package: SuperSOT™-6
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од. на суму грн.
| FDN8601 |
|
Виробник: onsemi
Description: MOSFET N-CH 100V 2.7A SUPERSOT3
Input Capacitance (Ciss) (Max) @ Vds: 210 pF @ 50 V
Gate Charge (Qg) (Max) @ Vgs: 5 nC @ 10 V
Drain to Source Voltage (Vdss): 100 V
Vgs (Max): ±20V
Drive Voltage (Max Rds On, Min Rds On): 6V, 10V
Part Status: Active
Supplier Device Package: SOT-23-3
Vgs(th) (Max) @ Id: 4V @ 250µA
Power Dissipation (Max): 1.5W (Ta)
Rds On (Max) @ Id, Vgs: 109mOhm @ 1.5A, 10V
Current - Continuous Drain (Id) @ 25°C: 2.7A (Ta)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: TO-236-3, SC-59, SOT-23-3
Packaging: Cut Tape (CT)
Description: MOSFET N-CH 100V 2.7A SUPERSOT3
Input Capacitance (Ciss) (Max) @ Vds: 210 pF @ 50 V
Gate Charge (Qg) (Max) @ Vgs: 5 nC @ 10 V
Drain to Source Voltage (Vdss): 100 V
Vgs (Max): ±20V
Drive Voltage (Max Rds On, Min Rds On): 6V, 10V
Part Status: Active
Supplier Device Package: SOT-23-3
Vgs(th) (Max) @ Id: 4V @ 250µA
Power Dissipation (Max): 1.5W (Ta)
Rds On (Max) @ Id, Vgs: 109mOhm @ 1.5A, 10V
Current - Continuous Drain (Id) @ 25°C: 2.7A (Ta)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: TO-236-3, SC-59, SOT-23-3
Packaging: Cut Tape (CT)
на замовлення 11469 шт:
термін постачання 21-31 дні (днів)
| Кількість | Ціна без ПДВ |
|---|---|
| 5+ | 66.64 грн |
| 10+ | 39.70 грн |
| 100+ | 25.81 грн |
| 500+ | 18.60 грн |
| 1000+ | 16.78 грн |
| FDY302NZ |
|
Виробник: onsemi
Description: MOSFET N-CH 20V 600MA SC89-3
Rds On (Max) @ Id, Vgs: 300mOhm @ 600mA, 4.5V
Current - Continuous Drain (Id) @ 25°C: 600mA (Ta)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: SC-89, SOT-490
Packaging: Cut Tape (CT)
Input Capacitance (Ciss) (Max) @ Vds: 60 pF @ 10 V
Gate Charge (Qg) (Max) @ Vgs: 1.1 nC @ 4.5 V
Drain to Source Voltage (Vdss): 20 V
Vgs (Max): ±12V
Drive Voltage (Max Rds On, Min Rds On): 1.8V, 4.5V
Part Status: Active
Supplier Device Package: SC-89-3
Vgs(th) (Max) @ Id: 1.5V @ 250µA
Power Dissipation (Max): 625mW (Ta)
Description: MOSFET N-CH 20V 600MA SC89-3
Rds On (Max) @ Id, Vgs: 300mOhm @ 600mA, 4.5V
Current - Continuous Drain (Id) @ 25°C: 600mA (Ta)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: SC-89, SOT-490
Packaging: Cut Tape (CT)
Input Capacitance (Ciss) (Max) @ Vds: 60 pF @ 10 V
Gate Charge (Qg) (Max) @ Vgs: 1.1 nC @ 4.5 V
Drain to Source Voltage (Vdss): 20 V
Vgs (Max): ±12V
Drive Voltage (Max Rds On, Min Rds On): 1.8V, 4.5V
Part Status: Active
Supplier Device Package: SC-89-3
Vgs(th) (Max) @ Id: 1.5V @ 250µA
Power Dissipation (Max): 625mW (Ta)
на замовлення 6386 шт:
термін постачання 21-31 дні (днів)
| Кількість | Ціна без ПДВ |
|---|---|
| 13+ | 24.80 грн |
| 16+ | 18.80 грн |
| 100+ | 11.28 грн |
| 500+ | 9.80 грн |
| 1000+ | 6.66 грн |
| FPF1038UCX |
|
Виробник: onsemi
Description: IC PWR SWITCH P-CHAN 1:1 6WLCSP
Description: IC PWR SWITCH P-CHAN 1:1 6WLCSP
на замовлення 25550 шт:
термін постачання 21-31 дні (днів)
| Кількість | Ціна без ПДВ |
|---|---|
| 5+ | 68.19 грн |
| 10+ | 57.76 грн |
| 25+ | 54.23 грн |
| 100+ | 41.53 грн |
| 250+ | 38.57 грн |
| 500+ | 32.83 грн |
| 1000+ | 25.83 грн |
| FPF1204UCX |
|
Виробник: onsemi
Description: IC PWR SWITCH P-CHAN 1:1 4WLCSP
Packaging: Cut Tape (CT)
Features: Load Discharge, Slew Rate Controlled
Package / Case: 4-UFBGA, WLCSP
Output Type: P-Channel
Mounting Type: Surface Mount
Number of Outputs: 1
Interface: On/Off
Switch Type: General Purpose
Operating Temperature: -40°C ~ 85°C (TA)
Output Configuration: High Side
Rds On (Typ): 45mOhm
Input Type: Non-Inverting
Voltage - Load: 1.2V ~ 5.5V
Voltage - Supply (Vcc/Vdd): Not Required
Current - Output (Max): 2.2A
Ratio - Input:Output: 1:1
Supplier Device Package: 4-WLCSP (0.76x0.76)
Description: IC PWR SWITCH P-CHAN 1:1 4WLCSP
Packaging: Cut Tape (CT)
Features: Load Discharge, Slew Rate Controlled
Package / Case: 4-UFBGA, WLCSP
Output Type: P-Channel
Mounting Type: Surface Mount
Number of Outputs: 1
Interface: On/Off
Switch Type: General Purpose
Operating Temperature: -40°C ~ 85°C (TA)
Output Configuration: High Side
Rds On (Typ): 45mOhm
Input Type: Non-Inverting
Voltage - Load: 1.2V ~ 5.5V
Voltage - Supply (Vcc/Vdd): Not Required
Current - Output (Max): 2.2A
Ratio - Input:Output: 1:1
Supplier Device Package: 4-WLCSP (0.76x0.76)
на замовлення 38225 шт:
термін постачання 21-31 дні (днів)
| Кількість | Ціна без ПДВ |
|---|---|
| 9+ | 35.65 грн |
| 13+ | 24.03 грн |
| 25+ | 21.46 грн |
| 100+ | 17.50 грн |
| 250+ | 16.24 грн |
| 500+ | 15.49 грн |
| 1000+ | 14.62 грн |
| FSSD06UMX |
|
Виробник: onsemi
Description: IC MULTIPLEXER 24UMLP
DigiKey Programmable: Not Verified
Supplier Device Package: 24-UMLP (3.4x2.5)
Applications: Cell Phones, Digital Cameras, Media Players
Type: Multiplexer
Mounting Type: Surface Mount
Package / Case: 24-UFQFN
Packaging: Cut Tape (CT)
Description: IC MULTIPLEXER 24UMLP
DigiKey Programmable: Not Verified
Supplier Device Package: 24-UMLP (3.4x2.5)
Applications: Cell Phones, Digital Cameras, Media Players
Type: Multiplexer
Mounting Type: Surface Mount
Package / Case: 24-UFQFN
Packaging: Cut Tape (CT)
на замовлення 7834 шт:
термін постачання 21-31 дні (днів)
| Кількість | Ціна без ПДВ |
|---|---|
| 2+ | 230.15 грн |
| 10+ | 140.66 грн |
| 25+ | 119.51 грн |
| 100+ | 89.78 грн |
| 250+ | 78.78 грн |
| 500+ | 72.01 грн |
| 1000+ | 65.26 грн |
| 2500+ | 60.10 грн |
| FSUSB63UMX |
|
Виробник: onsemi
Description: IC USB 2.0 SW & MUX 3:1 12-UMLP
Multiplexer/Demultiplexer Circuit: 3:1
Voltage - Supply, Single (V+): 2.7V ~ 4.4V
Supplier Device Package: 12-UMLP (1.8x1.8)
-3db Bandwidth: 830MHz
On-State Resistance (Max): 7.8Ohm
Applications: USB
Operating Temperature: -40°C ~ 85°C (TA)
Mounting Type: Surface Mount
Package / Case: 12-UFQFN
Features: Break-Before-Make, USB 2.0
Packaging: Cut Tape (CT)
Number of Channels: 1
Part Status: Last Time Buy
Description: IC USB 2.0 SW & MUX 3:1 12-UMLP
Multiplexer/Demultiplexer Circuit: 3:1
Voltage - Supply, Single (V+): 2.7V ~ 4.4V
Supplier Device Package: 12-UMLP (1.8x1.8)
-3db Bandwidth: 830MHz
On-State Resistance (Max): 7.8Ohm
Applications: USB
Operating Temperature: -40°C ~ 85°C (TA)
Mounting Type: Surface Mount
Package / Case: 12-UFQFN
Features: Break-Before-Make, USB 2.0
Packaging: Cut Tape (CT)
Number of Channels: 1
Part Status: Last Time Buy
на замовлення 9963 шт:
термін постачання 21-31 дні (днів)
| Кількість | Ціна без ПДВ |
|---|---|
| 6+ | 52.69 грн |
| 10+ | 36.34 грн |
| 25+ | 32.68 грн |
| 100+ | 26.87 грн |
| 250+ | 25.06 грн |
| 500+ | 23.97 грн |
| 1000+ | 22.70 грн |
| 2500+ | 22.63 грн |
| LM431SBCM32X |
|
Виробник: onsemi
Description: IC VREF SHUNT ADJ 1% SOT23-3
Voltage - Output (Max): 36 V
Current - Output: 100 mA
Current - Cathode: 1 mA
Part Status: Active
Voltage - Output (Min/Fixed): 2.495V
Supplier Device Package: SOT-23-3
Operating Temperature: -25°C ~ 85°C (TA)
Reference Type: Shunt
Mounting Type: Surface Mount
Output Type: Adjustable
Temperature Coefficient: 50ppm/°C Typical
Package / Case: TO-236-3, SC-59, SOT-23-3
Tolerance: ±1%
Packaging: Cut Tape (CT)
Description: IC VREF SHUNT ADJ 1% SOT23-3
Voltage - Output (Max): 36 V
Current - Output: 100 mA
Current - Cathode: 1 mA
Part Status: Active
Voltage - Output (Min/Fixed): 2.495V
Supplier Device Package: SOT-23-3
Operating Temperature: -25°C ~ 85°C (TA)
Reference Type: Shunt
Mounting Type: Surface Mount
Output Type: Adjustable
Temperature Coefficient: 50ppm/°C Typical
Package / Case: TO-236-3, SC-59, SOT-23-3
Tolerance: ±1%
Packaging: Cut Tape (CT)
товару немає в наявності
В кошику
од. на суму грн.
| NC7SZ125FHX |
|
Виробник: onsemi
Description: IC BUFF 1.65V 6-MICROPAK2
Packaging: Cut Tape (CT)
Package / Case: 6-UFDFN
Output Type: 3-State
Mounting Type: Surface Mount
Number of Elements: 1
Logic Type: Buffer, Non-Inverting
Operating Temperature: -40°C ~ 85°C (TA)
Voltage - Supply: 1.65V ~ 5.5V
Number of Bits per Element: 1
Current - Output High, Low: 32mA, 32mA
Supplier Device Package: 6-MicroPak2™
Part Status: Obsolete
Description: IC BUFF 1.65V 6-MICROPAK2
Packaging: Cut Tape (CT)
Package / Case: 6-UFDFN
Output Type: 3-State
Mounting Type: Surface Mount
Number of Elements: 1
Logic Type: Buffer, Non-Inverting
Operating Temperature: -40°C ~ 85°C (TA)
Voltage - Supply: 1.65V ~ 5.5V
Number of Bits per Element: 1
Current - Output High, Low: 32mA, 32mA
Supplier Device Package: 6-MicroPak2™
Part Status: Obsolete
на замовлення 635 шт:
термін постачання 21-31 дні (днів)
| Кількість | Ціна без ПДВ |
|---|---|
| 20+ | 15.50 грн |
| 29+ | 10.30 грн |
| 33+ | 9.16 грн |
| 100+ | 7.33 грн |
| 250+ | 6.74 грн |
| 500+ | 6.39 грн |
| QSB34CZR |
|
Виробник: onsemi
Description: SENSOR PHOTODIODE 940NM 2SMD
Packaging: Cut Tape (CT)
Package / Case: 2-SMD, Z-Bend
Wavelength: 940nm
Mounting Type: Surface Mount
Diode Type: Pin
Operating Temperature: -25°C ~ 85°C
Response Time: 50ns
Viewing Angle: 120°
Spectral Range: 400nm ~ 1100nm
Active Area: 6.5mm²
Current - Dark (Typ): 30nA
Part Status: Active
Voltage - DC Reverse (Vr) (Max): 32 V
Description: SENSOR PHOTODIODE 940NM 2SMD
Packaging: Cut Tape (CT)
Package / Case: 2-SMD, Z-Bend
Wavelength: 940nm
Mounting Type: Surface Mount
Diode Type: Pin
Operating Temperature: -25°C ~ 85°C
Response Time: 50ns
Viewing Angle: 120°
Spectral Range: 400nm ~ 1100nm
Active Area: 6.5mm²
Current - Dark (Typ): 30nA
Part Status: Active
Voltage - DC Reverse (Vr) (Max): 32 V
на замовлення 218 шт:
термін постачання 21-31 дні (днів)
| Кількість | Ціна без ПДВ |
|---|---|
| 5+ | 75.94 грн |
| 10+ | 51.26 грн |
| 100+ | 38.10 грн |
| 2N3904TAR |
|
Виробник: onsemi
Description: TRANS NPN 40V 0.2A TO-92-3
Packaging: Cut Tape (CT)
Package / Case: TO-226-3, TO-92-3 (TO-226AA) Formed Leads
Mounting Type: Through Hole
Transistor Type: NPN
Operating Temperature: -55°C ~ 150°C (TJ)
Vce Saturation (Max) @ Ib, Ic: 300mV @ 5mA, 50mA
DC Current Gain (hFE) (Min) @ Ic, Vce: 100 @ 10mA, 1V
Frequency - Transition: 300MHz
Supplier Device Package: TO-92-3
Part Status: Active
Current - Collector (Ic) (Max): 200 mA
Voltage - Collector Emitter Breakdown (Max): 40 V
Power - Max: 625 mW
Description: TRANS NPN 40V 0.2A TO-92-3
Packaging: Cut Tape (CT)
Package / Case: TO-226-3, TO-92-3 (TO-226AA) Formed Leads
Mounting Type: Through Hole
Transistor Type: NPN
Operating Temperature: -55°C ~ 150°C (TJ)
Vce Saturation (Max) @ Ib, Ic: 300mV @ 5mA, 50mA
DC Current Gain (hFE) (Min) @ Ic, Vce: 100 @ 10mA, 1V
Frequency - Transition: 300MHz
Supplier Device Package: TO-92-3
Part Status: Active
Current - Collector (Ic) (Max): 200 mA
Voltage - Collector Emitter Breakdown (Max): 40 V
Power - Max: 625 mW
на замовлення 734 шт:
термін постачання 21-31 дні (днів)
| Кількість | Ціна без ПДВ |
|---|---|
| 16+ | 19.37 грн |
| 26+ | 11.72 грн |
| 100+ | 7.28 грн |
| 500+ | 5.03 грн |
| 2N6517TA |
|
Виробник: onsemi
Description: TRANS NPN 350V 0.5A TO-92-3
Packaging: Cut Tape (CT)
Package / Case: TO-226-3, TO-92-3 (TO-226AA) Formed Leads
Mounting Type: Through Hole
Transistor Type: NPN
Operating Temperature: 150°C (TJ)
Vce Saturation (Max) @ Ib, Ic: 1V @ 5mA, 50mA
Current - Collector Cutoff (Max): 50nA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce: 20 @ 50mA, 10V
Frequency - Transition: 200MHz
Supplier Device Package: TO-92-3
Part Status: Active
Current - Collector (Ic) (Max): 500 mA
Voltage - Collector Emitter Breakdown (Max): 350 V
Power - Max: 625 mW
Description: TRANS NPN 350V 0.5A TO-92-3
Packaging: Cut Tape (CT)
Package / Case: TO-226-3, TO-92-3 (TO-226AA) Formed Leads
Mounting Type: Through Hole
Transistor Type: NPN
Operating Temperature: 150°C (TJ)
Vce Saturation (Max) @ Ib, Ic: 1V @ 5mA, 50mA
Current - Collector Cutoff (Max): 50nA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce: 20 @ 50mA, 10V
Frequency - Transition: 200MHz
Supplier Device Package: TO-92-3
Part Status: Active
Current - Collector (Ic) (Max): 500 mA
Voltage - Collector Emitter Breakdown (Max): 350 V
Power - Max: 625 mW
на замовлення 6196 шт:
термін постачання 21-31 дні (днів)
| Кількість | Ціна без ПДВ |
|---|---|
| 13+ | 24.80 грн |
| 21+ | 14.55 грн |
| 100+ | 9.13 грн |
| 500+ | 6.35 грн |
| 1000+ | 5.63 грн |
| BC546CTA |
|
Виробник: onsemi
Description: TRANS NPN 65V 0.1A TO-92-3
Packaging: Cut Tape (CT)
Package / Case: TO-226-3, TO-92-3 (TO-226AA) Formed Leads
Mounting Type: Through Hole
Transistor Type: NPN
Operating Temperature: 150°C (TJ)
Vce Saturation (Max) @ Ib, Ic: 600mV @ 5mA, 100mA
Current - Collector Cutoff (Max): 15nA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce: 420 @ 2mA, 5V
Frequency - Transition: 300MHz
Supplier Device Package: TO-92-3
Part Status: Active
Current - Collector (Ic) (Max): 100 mA
Voltage - Collector Emitter Breakdown (Max): 65 V
Power - Max: 500 mW
Description: TRANS NPN 65V 0.1A TO-92-3
Packaging: Cut Tape (CT)
Package / Case: TO-226-3, TO-92-3 (TO-226AA) Formed Leads
Mounting Type: Through Hole
Transistor Type: NPN
Operating Temperature: 150°C (TJ)
Vce Saturation (Max) @ Ib, Ic: 600mV @ 5mA, 100mA
Current - Collector Cutoff (Max): 15nA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce: 420 @ 2mA, 5V
Frequency - Transition: 300MHz
Supplier Device Package: TO-92-3
Part Status: Active
Current - Collector (Ic) (Max): 100 mA
Voltage - Collector Emitter Breakdown (Max): 65 V
Power - Max: 500 mW
на замовлення 10311 шт:
термін постачання 21-31 дні (днів)
| Кількість | Ціна без ПДВ |
|---|---|
| 16+ | 19.37 грн |
| 26+ | 11.57 грн |
| 100+ | 7.19 грн |
| 500+ | 4.97 грн |
| 1000+ | 4.39 грн |
| BC550CTA |
|
Виробник: onsemi
Description: TRANS NPN 45V 0.1A TO-92-3
Packaging: Cut Tape (CT)
Package / Case: TO-226-3, TO-92-3 (TO-226AA) Formed Leads
Mounting Type: Through Hole
Transistor Type: NPN
Operating Temperature: 150°C (TJ)
Vce Saturation (Max) @ Ib, Ic: 600mV @ 5mA, 100mA
Current - Collector Cutoff (Max): 15nA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce: 420 @ 2mA, 5V
Frequency - Transition: 300MHz
Supplier Device Package: TO-92-3
Part Status: Active
Current - Collector (Ic) (Max): 100 mA
Voltage - Collector Emitter Breakdown (Max): 45 V
Power - Max: 500 mW
Description: TRANS NPN 45V 0.1A TO-92-3
Packaging: Cut Tape (CT)
Package / Case: TO-226-3, TO-92-3 (TO-226AA) Formed Leads
Mounting Type: Through Hole
Transistor Type: NPN
Operating Temperature: 150°C (TJ)
Vce Saturation (Max) @ Ib, Ic: 600mV @ 5mA, 100mA
Current - Collector Cutoff (Max): 15nA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce: 420 @ 2mA, 5V
Frequency - Transition: 300MHz
Supplier Device Package: TO-92-3
Part Status: Active
Current - Collector (Ic) (Max): 100 mA
Voltage - Collector Emitter Breakdown (Max): 45 V
Power - Max: 500 mW
на замовлення 1403 шт:
термін постачання 21-31 дні (днів)
| Кількість | Ціна без ПДВ |
|---|---|
| 16+ | 19.37 грн |
| 27+ | 11.34 грн |
| 100+ | 7.03 грн |
| 500+ | 4.85 грн |
| 1000+ | 4.29 грн |
| BC557ATA |
|
Виробник: onsemi
Description: TRANS PNP 45V 0.1A TO-92-3
Packaging: Cut Tape (CT)
Package / Case: TO-226-3, TO-92-3 (TO-226AA) Formed Leads
Mounting Type: Through Hole
Transistor Type: PNP
Operating Temperature: 150°C (TJ)
Vce Saturation (Max) @ Ib, Ic: 650mV @ 5mA, 100mA
Current - Collector Cutoff (Max): 15nA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce: 110 @ 2mA, 5V
Frequency - Transition: 150MHz
Supplier Device Package: TO-92-3
Part Status: Active
Current - Collector (Ic) (Max): 100 mA
Voltage - Collector Emitter Breakdown (Max): 45 V
Power - Max: 500 mW
Description: TRANS PNP 45V 0.1A TO-92-3
Packaging: Cut Tape (CT)
Package / Case: TO-226-3, TO-92-3 (TO-226AA) Formed Leads
Mounting Type: Through Hole
Transistor Type: PNP
Operating Temperature: 150°C (TJ)
Vce Saturation (Max) @ Ib, Ic: 650mV @ 5mA, 100mA
Current - Collector Cutoff (Max): 15nA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce: 110 @ 2mA, 5V
Frequency - Transition: 150MHz
Supplier Device Package: TO-92-3
Part Status: Active
Current - Collector (Ic) (Max): 100 mA
Voltage - Collector Emitter Breakdown (Max): 45 V
Power - Max: 500 mW
на замовлення 738 шт:
термін постачання 21-31 дні (днів)
| Кількість | Ціна без ПДВ |
|---|---|
| 15+ | 20.92 грн |
| 25+ | 12.39 грн |
| 100+ | 7.70 грн |
| 500+ | 5.33 грн |
| BC559BTA |
|
Виробник: onsemi
Description: TRANS PNP 30V 0.1A TO-92-3
Packaging: Cut Tape (CT)
Package / Case: TO-226-3, TO-92-3 (TO-226AA) Formed Leads
Mounting Type: Through Hole
Transistor Type: PNP
Operating Temperature: 150°C (TJ)
Vce Saturation (Max) @ Ib, Ic: 650mV @ 5mA, 100mA
Current - Collector Cutoff (Max): 15nA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce: 200 @ 2mA, 5V
Frequency - Transition: 150MHz
Supplier Device Package: TO-92-3
Part Status: Active
Current - Collector (Ic) (Max): 100 mA
Voltage - Collector Emitter Breakdown (Max): 30 V
Power - Max: 500 mW
Description: TRANS PNP 30V 0.1A TO-92-3
Packaging: Cut Tape (CT)
Package / Case: TO-226-3, TO-92-3 (TO-226AA) Formed Leads
Mounting Type: Through Hole
Transistor Type: PNP
Operating Temperature: 150°C (TJ)
Vce Saturation (Max) @ Ib, Ic: 650mV @ 5mA, 100mA
Current - Collector Cutoff (Max): 15nA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce: 200 @ 2mA, 5V
Frequency - Transition: 150MHz
Supplier Device Package: TO-92-3
Part Status: Active
Current - Collector (Ic) (Max): 100 mA
Voltage - Collector Emitter Breakdown (Max): 30 V
Power - Max: 500 mW
на замовлення 63979 шт:
термін постачання 21-31 дні (днів)
| Кількість | Ціна без ПДВ |
|---|---|
| 16+ | 19.37 грн |
| 27+ | 11.42 грн |
| 100+ | 7.07 грн |
| 500+ | 4.88 грн |
| 1000+ | 4.31 грн |
| BC559CTA |
|
Виробник: onsemi
Description: TRANS PNP 30V 0.1A TO-92-3
Packaging: Cut Tape (CT)
Package / Case: TO-226-3, TO-92-3 (TO-226AA) Formed Leads
Mounting Type: Through Hole
Transistor Type: PNP
Operating Temperature: 150°C (TJ)
Vce Saturation (Max) @ Ib, Ic: 650mV @ 5mA, 100mA
Current - Collector Cutoff (Max): 15nA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce: 420 @ 2mA, 5V
Frequency - Transition: 150MHz
Supplier Device Package: TO-92-3
Part Status: Active
Current - Collector (Ic) (Max): 100 mA
Voltage - Collector Emitter Breakdown (Max): 30 V
Power - Max: 500 mW
Description: TRANS PNP 30V 0.1A TO-92-3
Packaging: Cut Tape (CT)
Package / Case: TO-226-3, TO-92-3 (TO-226AA) Formed Leads
Mounting Type: Through Hole
Transistor Type: PNP
Operating Temperature: 150°C (TJ)
Vce Saturation (Max) @ Ib, Ic: 650mV @ 5mA, 100mA
Current - Collector Cutoff (Max): 15nA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce: 420 @ 2mA, 5V
Frequency - Transition: 150MHz
Supplier Device Package: TO-92-3
Part Status: Active
Current - Collector (Ic) (Max): 100 mA
Voltage - Collector Emitter Breakdown (Max): 30 V
Power - Max: 500 mW
на замовлення 1723 шт:
термін постачання 21-31 дні (днів)
| Кількість | Ціна без ПДВ |
|---|---|
| 16+ | 19.37 грн |
| 27+ | 11.42 грн |
| 100+ | 7.13 грн |
| 500+ | 4.93 грн |
| 1000+ | 4.35 грн |
| J176-D74Z |
|
Виробник: onsemi
Description: JFET P-CH 30V TO92-3
Current - Drain (Idss) @ Vds (Vgs=0): 2 mA @ 15 V
Voltage - Cutoff (VGS off) @ Id: 1 V @ 10 nA
Resistance - RDS(On): 250 Ohms
Power - Max: 350 mW
Part Status: Active
Supplier Device Package: TO-92-3
Voltage - Breakdown (V(BR)GSS): 30 V
Package / Case: TO-226-3, TO-92-3 (TO-226AA) Formed Leads
Packaging: Cut Tape (CT)
FET Type: P-Channel
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Through Hole
Description: JFET P-CH 30V TO92-3
Current - Drain (Idss) @ Vds (Vgs=0): 2 mA @ 15 V
Voltage - Cutoff (VGS off) @ Id: 1 V @ 10 nA
Resistance - RDS(On): 250 Ohms
Power - Max: 350 mW
Part Status: Active
Supplier Device Package: TO-92-3
Voltage - Breakdown (V(BR)GSS): 30 V
Package / Case: TO-226-3, TO-92-3 (TO-226AA) Formed Leads
Packaging: Cut Tape (CT)
FET Type: P-Channel
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Through Hole
на замовлення 3711 шт:
термін постачання 21-31 дні (днів)
| Кількість | Ціна без ПДВ |
|---|---|
| 8+ | 40.30 грн |
| 13+ | 23.95 грн |
| 100+ | 15.33 грн |
| 500+ | 10.87 грн |
| 1000+ | 9.73 грн |
| KSA1015YTA |
|
Виробник: onsemi
Description: TRANS PNP 50V 0.15A TO-92-3
Packaging: Cut Tape (CT)
Package / Case: TO-226-3, TO-92-3 (TO-226AA) Formed Leads
Mounting Type: Through Hole
Transistor Type: PNP
Operating Temperature: 150°C (TJ)
Vce Saturation (Max) @ Ib, Ic: 300mV @ 10mA, 100mA
Current - Collector Cutoff (Max): 100nA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce: 120 @ 2mA, 6V
Frequency - Transition: 80MHz
Supplier Device Package: TO-92-3
Part Status: Active
Current - Collector (Ic) (Max): 150 mA
Voltage - Collector Emitter Breakdown (Max): 50 V
Power - Max: 400 mW
Description: TRANS PNP 50V 0.15A TO-92-3
Packaging: Cut Tape (CT)
Package / Case: TO-226-3, TO-92-3 (TO-226AA) Formed Leads
Mounting Type: Through Hole
Transistor Type: PNP
Operating Temperature: 150°C (TJ)
Vce Saturation (Max) @ Ib, Ic: 300mV @ 10mA, 100mA
Current - Collector Cutoff (Max): 100nA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce: 120 @ 2mA, 6V
Frequency - Transition: 80MHz
Supplier Device Package: TO-92-3
Part Status: Active
Current - Collector (Ic) (Max): 150 mA
Voltage - Collector Emitter Breakdown (Max): 50 V
Power - Max: 400 mW
товару немає в наявності
В кошику
од. на суму грн.
| KSA992FTA |
|
Виробник: onsemi
Description: TRANS PNP 120V 0.05A TO-92-3
Packaging: Cut Tape (CT)
Package / Case: TO-226-3, TO-92-3 (TO-226AA) Formed Leads
Mounting Type: Through Hole
Transistor Type: PNP
Operating Temperature: 150°C (TJ)
Vce Saturation (Max) @ Ib, Ic: 300mV @ 1mA, 10mA
Current - Collector Cutoff (Max): 1µA
DC Current Gain (hFE) (Min) @ Ic, Vce: 300 @ 1mA, 6V
Frequency - Transition: 100MHz
Supplier Device Package: TO-92-3
Part Status: Active
Current - Collector (Ic) (Max): 50 mA
Voltage - Collector Emitter Breakdown (Max): 120 V
Power - Max: 500 mW
Description: TRANS PNP 120V 0.05A TO-92-3
Packaging: Cut Tape (CT)
Package / Case: TO-226-3, TO-92-3 (TO-226AA) Formed Leads
Mounting Type: Through Hole
Transistor Type: PNP
Operating Temperature: 150°C (TJ)
Vce Saturation (Max) @ Ib, Ic: 300mV @ 1mA, 10mA
Current - Collector Cutoff (Max): 1µA
DC Current Gain (hFE) (Min) @ Ic, Vce: 300 @ 1mA, 6V
Frequency - Transition: 100MHz
Supplier Device Package: TO-92-3
Part Status: Active
Current - Collector (Ic) (Max): 50 mA
Voltage - Collector Emitter Breakdown (Max): 120 V
Power - Max: 500 mW
на замовлення 1297 шт:
термін постачання 21-31 дні (днів)
| Кількість | Ціна без ПДВ |
|---|---|
| 13+ | 24.02 грн |
| 22+ | 14.18 грн |
| 100+ | 8.89 грн |
| 500+ | 6.17 грн |
| 1000+ | 5.47 грн |
| KSC1845FTA |
|
Виробник: onsemi
Description: TRANS NPN 120V 0.05A TO-92-3
Packaging: Cut Tape (CT)
Package / Case: TO-226-3, TO-92-3 (TO-226AA) Formed Leads
Mounting Type: Through Hole
Transistor Type: NPN
Operating Temperature: 150°C (TJ)
Vce Saturation (Max) @ Ib, Ic: 300mV @ 1mA, 10mA
Current - Collector Cutoff (Max): 50nA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce: 300 @ 1mA, 6V
Frequency - Transition: 110MHz
Supplier Device Package: TO-92-3
Part Status: Active
Current - Collector (Ic) (Max): 50 mA
Voltage - Collector Emitter Breakdown (Max): 120 V
Power - Max: 500 mW
Description: TRANS NPN 120V 0.05A TO-92-3
Packaging: Cut Tape (CT)
Package / Case: TO-226-3, TO-92-3 (TO-226AA) Formed Leads
Mounting Type: Through Hole
Transistor Type: NPN
Operating Temperature: 150°C (TJ)
Vce Saturation (Max) @ Ib, Ic: 300mV @ 1mA, 10mA
Current - Collector Cutoff (Max): 50nA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce: 300 @ 1mA, 6V
Frequency - Transition: 110MHz
Supplier Device Package: TO-92-3
Part Status: Active
Current - Collector (Ic) (Max): 50 mA
Voltage - Collector Emitter Breakdown (Max): 120 V
Power - Max: 500 mW
на замовлення 1530 шт:
термін постачання 21-31 дні (днів)
| Кількість | Ціна без ПДВ |
|---|---|
| 14+ | 22.47 грн |
| 23+ | 13.28 грн |
| 100+ | 8.29 грн |
| 500+ | 5.75 грн |
| 1000+ | 5.09 грн |
| KSC2316YTA |
|
Виробник: onsemi
Description: TRANS NPN 120V 0.8A TO-92-3
Power - Max: 900 mW
Voltage - Collector Emitter Breakdown (Max): 120 V
Current - Collector (Ic) (Max): 800 mA
Part Status: Obsolete
Supplier Device Package: TO-92-3
Frequency - Transition: 120MHz
DC Current Gain (hFE) (Min) @ Ic, Vce: 120 @ 100mA, 5V
Current - Collector Cutoff (Max): 100nA (ICBO)
Vce Saturation (Max) @ Ib, Ic: 1V @ 50mA, 500mA
Operating Temperature: 150°C (TJ)
Transistor Type: NPN
Mounting Type: Through Hole
Package / Case: TO-226-3, TO-92-3 Long Body, Formed Leads
Packaging: Cut Tape (CT)
Description: TRANS NPN 120V 0.8A TO-92-3
Power - Max: 900 mW
Voltage - Collector Emitter Breakdown (Max): 120 V
Current - Collector (Ic) (Max): 800 mA
Part Status: Obsolete
Supplier Device Package: TO-92-3
Frequency - Transition: 120MHz
DC Current Gain (hFE) (Min) @ Ic, Vce: 120 @ 100mA, 5V
Current - Collector Cutoff (Max): 100nA (ICBO)
Vce Saturation (Max) @ Ib, Ic: 1V @ 50mA, 500mA
Operating Temperature: 150°C (TJ)
Transistor Type: NPN
Mounting Type: Through Hole
Package / Case: TO-226-3, TO-92-3 Long Body, Formed Leads
Packaging: Cut Tape (CT)
товару немає в наявності
В кошику
од. на суму грн.
| KSC2383OTA |
|
Виробник: onsemi
Description: TRANS NPN 160V 1A TO-92-3
Packaging: Cut Tape (CT)
Package / Case: TO-226-3, TO-92-3 Long Body, Formed Leads
Mounting Type: Through Hole
Transistor Type: NPN
Operating Temperature: 150°C (TJ)
Vce Saturation (Max) @ Ib, Ic: 1.5V @ 50mA, 500mA
Current - Collector Cutoff (Max): 1µA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce: 100 @ 200mA, 5V
Frequency - Transition: 100MHz
Supplier Device Package: TO-92-3
Part Status: Active
Current - Collector (Ic) (Max): 1 A
Voltage - Collector Emitter Breakdown (Max): 160 V
Power - Max: 900 mW
Description: TRANS NPN 160V 1A TO-92-3
Packaging: Cut Tape (CT)
Package / Case: TO-226-3, TO-92-3 Long Body, Formed Leads
Mounting Type: Through Hole
Transistor Type: NPN
Operating Temperature: 150°C (TJ)
Vce Saturation (Max) @ Ib, Ic: 1.5V @ 50mA, 500mA
Current - Collector Cutoff (Max): 1µA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce: 100 @ 200mA, 5V
Frequency - Transition: 100MHz
Supplier Device Package: TO-92-3
Part Status: Active
Current - Collector (Ic) (Max): 1 A
Voltage - Collector Emitter Breakdown (Max): 160 V
Power - Max: 900 mW
на замовлення 1037 шт:
термін постачання 21-31 дні (днів)
| Кількість | Ціна без ПДВ |
|---|---|
| 7+ | 46.49 грн |
| 11+ | 27.83 грн |
| 100+ | 17.84 грн |
| 500+ | 12.68 грн |
| 1000+ | 11.37 грн |
| KSC2383YTA |
|
Виробник: onsemi
Description: TRANS NPN 160V 1A TO-92-3
Packaging: Cut Tape (CT)
Package / Case: TO-226-3, TO-92-3 Long Body, Formed Leads
Mounting Type: Through Hole
Transistor Type: NPN
Operating Temperature: 150°C (TJ)
Vce Saturation (Max) @ Ib, Ic: 1.5V @ 50mA, 500mA
Current - Collector Cutoff (Max): 1µA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce: 160 @ 200mA, 5V
Frequency - Transition: 100MHz
Supplier Device Package: TO-92-3
Part Status: Active
Current - Collector (Ic) (Max): 1 A
Voltage - Collector Emitter Breakdown (Max): 160 V
Power - Max: 900 mW
Description: TRANS NPN 160V 1A TO-92-3
Packaging: Cut Tape (CT)
Package / Case: TO-226-3, TO-92-3 Long Body, Formed Leads
Mounting Type: Through Hole
Transistor Type: NPN
Operating Temperature: 150°C (TJ)
Vce Saturation (Max) @ Ib, Ic: 1.5V @ 50mA, 500mA
Current - Collector Cutoff (Max): 1µA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce: 160 @ 200mA, 5V
Frequency - Transition: 100MHz
Supplier Device Package: TO-92-3
Part Status: Active
Current - Collector (Ic) (Max): 1 A
Voltage - Collector Emitter Breakdown (Max): 160 V
Power - Max: 900 mW
на замовлення 900 шт:
термін постачання 21-31 дні (днів)
| Кількість | Ціна без ПДВ |
|---|---|
| 8+ | 44.17 грн |
| 12+ | 26.19 грн |
| 100+ | 16.77 грн |
| 500+ | 11.90 грн |
| SS8550DTA |
|
Виробник: onsemi
Description: TRANS PNP 25V 1.5A TO-92-3
Packaging: Cut Tape (CT)
Package / Case: TO-226-3, TO-92-3 (TO-226AA) Formed Leads
Mounting Type: Through Hole
Transistor Type: PNP
Operating Temperature: 150°C (TJ)
Vce Saturation (Max) @ Ib, Ic: 500mV @ 80mA, 800mA
Current - Collector Cutoff (Max): 100nA
DC Current Gain (hFE) (Min) @ Ic, Vce: 160 @ 100mA, 1V
Frequency - Transition: 200MHz
Supplier Device Package: TO-92-3
Part Status: Active
Current - Collector (Ic) (Max): 1.5 A
Voltage - Collector Emitter Breakdown (Max): 25 V
Power - Max: 1 W
Description: TRANS PNP 25V 1.5A TO-92-3
Packaging: Cut Tape (CT)
Package / Case: TO-226-3, TO-92-3 (TO-226AA) Formed Leads
Mounting Type: Through Hole
Transistor Type: PNP
Operating Temperature: 150°C (TJ)
Vce Saturation (Max) @ Ib, Ic: 500mV @ 80mA, 800mA
Current - Collector Cutoff (Max): 100nA
DC Current Gain (hFE) (Min) @ Ic, Vce: 160 @ 100mA, 1V
Frequency - Transition: 200MHz
Supplier Device Package: TO-92-3
Part Status: Active
Current - Collector (Ic) (Max): 1.5 A
Voltage - Collector Emitter Breakdown (Max): 25 V
Power - Max: 1 W
на замовлення 2328 шт:
термін постачання 21-31 дні (днів)
| Кількість | Ціна без ПДВ |
|---|---|
| 12+ | 27.12 грн |
| 19+ | 16.12 грн |
| 100+ | 10.10 грн |
| 500+ | 7.04 грн |
| 1000+ | 6.25 грн |
| FNC42060F |
|
Виробник: onsemi
Description: MODULE SPM 600V 20A 26PWRDIP
Voltage: 600 V
Current: 20 A
Part Status: Not For New Designs
Voltage - Isolation: 2000Vrms
Configuration: 3 Phase
Type: IGBT
Mounting Type: Through Hole
Package / Case: 26-PowerDIP Module (1.024", 26.00mm)
Packaging: Tube
Description: MODULE SPM 600V 20A 26PWRDIP
Voltage: 600 V
Current: 20 A
Part Status: Not For New Designs
Voltage - Isolation: 2000Vrms
Configuration: 3 Phase
Type: IGBT
Mounting Type: Through Hole
Package / Case: 26-PowerDIP Module (1.024", 26.00mm)
Packaging: Tube
на замовлення 648 шт:
термін постачання 21-31 дні (днів)
| Кількість | Ціна без ПДВ |
|---|---|
| 12+ | 1012.61 грн |
| 36+ | 896.03 грн |
| 84+ | 843.33 грн |
| 300+ | 766.69 грн |
| 600+ | 717.23 грн |
| HUF76633S3ST-F085 |
|
Виробник: onsemi
Description: MOSFET N-CH 100V 39A D2PAK
Qualification: AEC-Q101
Input Capacitance (Ciss) (Max) @ Vds: 1810 pF @ 25 V
Gate Charge (Qg) (Max) @ Vgs: 63 nC @ 10 V
Drain to Source Voltage (Vdss): 100 V
Vgs (Max): ±16V
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Grade: Automotive
Supplier Device Package: TO-263 (D2Pak)
Vgs(th) (Max) @ Id: 3V @ 250µA
Power Dissipation (Max): 183W (Tj)
Rds On (Max) @ Id, Vgs: 35mOhm @ 39A, 10V
Current - Continuous Drain (Id) @ 25°C: 39A (Tc)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 175°C (TJ)
Mounting Type: Surface Mount
Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
Packaging: Tape & Reel (TR)
Description: MOSFET N-CH 100V 39A D2PAK
Qualification: AEC-Q101
Input Capacitance (Ciss) (Max) @ Vds: 1810 pF @ 25 V
Gate Charge (Qg) (Max) @ Vgs: 63 nC @ 10 V
Drain to Source Voltage (Vdss): 100 V
Vgs (Max): ±16V
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Grade: Automotive
Supplier Device Package: TO-263 (D2Pak)
Vgs(th) (Max) @ Id: 3V @ 250µA
Power Dissipation (Max): 183W (Tj)
Rds On (Max) @ Id, Vgs: 35mOhm @ 39A, 10V
Current - Continuous Drain (Id) @ 25°C: 39A (Tc)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 175°C (TJ)
Mounting Type: Surface Mount
Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
Packaging: Tape & Reel (TR)
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| FAN48632UC33X |
|
Виробник: onsemi
Description: IC REG CONV GSM PA 1OUT 16WLCSP
Operating Temperature: -40°C ~ 85°C
Voltage - Input: 2.35V ~ 5.5V
Number of Outputs: 1
Mounting Type: Surface Mount
Voltage - Output: 3.3V, 3.49V
Package / Case: 16-UFBGA, WLCSP
Packaging: Tape & Reel (TR)
Supplier Device Package: 16-WLCSP (1.78x1.78)
Applications: Converter, GSM PA
Description: IC REG CONV GSM PA 1OUT 16WLCSP
Operating Temperature: -40°C ~ 85°C
Voltage - Input: 2.35V ~ 5.5V
Number of Outputs: 1
Mounting Type: Surface Mount
Voltage - Output: 3.3V, 3.49V
Package / Case: 16-UFBGA, WLCSP
Packaging: Tape & Reel (TR)
Supplier Device Package: 16-WLCSP (1.78x1.78)
Applications: Converter, GSM PA
товару немає в наявності
Мінімальне замовлення: 3000 шт
В кошику
од. на суму грн.
| HUF76419S3ST-F085 |
|
Виробник: onsemi
Description: MOSFET N-CH 60V 29A D2PAK
Qualification: AEC-Q101
Input Capacitance (Ciss) (Max) @ Vds: 870 pF @ 25 V
Gate Charge (Qg) (Max) @ Vgs: 28.5 nC @ 10 V
Drain to Source Voltage (Vdss): 60 V
Vgs (Max): ±16V
Drive Voltage (Max Rds On, Min Rds On): 10V
Grade: Automotive
Supplier Device Package: TO-263 (D2Pak)
Vgs(th) (Max) @ Id: 3V @ 250µA
Power Dissipation (Max): 100W (Tc)
Rds On (Max) @ Id, Vgs: 35mOhm @ 29A, 10V
Current - Continuous Drain (Id) @ 25°C: 29A (Tc)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 175°C (TJ)
Mounting Type: Surface Mount
Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
Packaging: Tape & Reel (TR)
Description: MOSFET N-CH 60V 29A D2PAK
Qualification: AEC-Q101
Input Capacitance (Ciss) (Max) @ Vds: 870 pF @ 25 V
Gate Charge (Qg) (Max) @ Vgs: 28.5 nC @ 10 V
Drain to Source Voltage (Vdss): 60 V
Vgs (Max): ±16V
Drive Voltage (Max Rds On, Min Rds On): 10V
Grade: Automotive
Supplier Device Package: TO-263 (D2Pak)
Vgs(th) (Max) @ Id: 3V @ 250µA
Power Dissipation (Max): 100W (Tc)
Rds On (Max) @ Id, Vgs: 35mOhm @ 29A, 10V
Current - Continuous Drain (Id) @ 25°C: 29A (Tc)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 175°C (TJ)
Mounting Type: Surface Mount
Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
Packaging: Tape & Reel (TR)
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В кошику
од. на суму грн.
| FNC42060F2 |
|
Виробник: onsemi
Description: MODULE SPM 600V 20A SPMAA
Voltage: 600 V
Current: 20 A
Voltage - Isolation: 2000Vrms
Configuration: 3 Phase
Type: IGBT
Mounting Type: Through Hole
Package / Case: 26-PowerDIP Module (1.024", 26.00mm)
Packaging: Tube
Description: MODULE SPM 600V 20A SPMAA
Voltage: 600 V
Current: 20 A
Voltage - Isolation: 2000Vrms
Configuration: 3 Phase
Type: IGBT
Mounting Type: Through Hole
Package / Case: 26-PowerDIP Module (1.024", 26.00mm)
Packaging: Tube
на замовлення 40 шт:
термін постачання 21-31 дні (днів)
| Кількість | Ціна без ПДВ |
|---|---|
| 1+ | 1214.28 грн |
| FCH104N60F |
|
Виробник: onsemi
Description: MOSFET N-CH 600V 37A TO247-3
Packaging: Tube
Package / Case: TO-247-3
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 37A (Tc)
Rds On (Max) @ Id, Vgs: 104mOhm @ 18.5A, 10V
Power Dissipation (Max): 357W (Tc)
Vgs(th) (Max) @ Id: 5V @ 250µA
Supplier Device Package: TO-247-3
Part Status: Not For New Designs
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 600 V
Gate Charge (Qg) (Max) @ Vgs: 139 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 5950 pF @ 100 V
Description: MOSFET N-CH 600V 37A TO247-3
Packaging: Tube
Package / Case: TO-247-3
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 37A (Tc)
Rds On (Max) @ Id, Vgs: 104mOhm @ 18.5A, 10V
Power Dissipation (Max): 357W (Tc)
Vgs(th) (Max) @ Id: 5V @ 250µA
Supplier Device Package: TO-247-3
Part Status: Not For New Designs
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 600 V
Gate Charge (Qg) (Max) @ Vgs: 139 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 5950 pF @ 100 V
на замовлення 300 шт:
термін постачання 21-31 дні (днів)
| Кількість | Ціна без ПДВ |
|---|---|
| 1+ | 590.48 грн |
| 30+ | 332.09 грн |
| 120+ | 280.27 грн |
| FSB50760SFT |
|
Виробник: onsemi
Description: MOD SPM 600V 1A SPM5N-023
Description: MOD SPM 600V 1A SPM5N-023
на замовлення 180 шт:
термін постачання 21-31 дні (днів)
| FAN23SV06MPX |
|
Виробник: onsemi
Description: IC REG BUCK ADJ 6A 34QFN
Output Type: Adjustable
Package / Case: 34-PowerTFQFN
Packaging: Tape & Reel (TR)
Voltage - Output (Max): 5.5V
Synchronous Rectifier: Yes
Supplier Device Package: 34-PQFN (5.5x5)
Topology: Buck
Voltage - Input (Max): 15V
Frequency - Switching: 200kHz ~ 1.5MHz
Output Configuration: Positive
Operating Temperature: -40°C ~ 125°C (TJ)
Current - Output: 6A
Function: Step-Down
Number of Outputs: 1
Mounting Type: Surface Mount
Voltage - Output (Min/Fixed): 0.6V
Voltage - Input (Min): 7V
Description: IC REG BUCK ADJ 6A 34QFN
Output Type: Adjustable
Package / Case: 34-PowerTFQFN
Packaging: Tape & Reel (TR)
Voltage - Output (Max): 5.5V
Synchronous Rectifier: Yes
Supplier Device Package: 34-PQFN (5.5x5)
Topology: Buck
Voltage - Input (Max): 15V
Frequency - Switching: 200kHz ~ 1.5MHz
Output Configuration: Positive
Operating Temperature: -40°C ~ 125°C (TJ)
Current - Output: 6A
Function: Step-Down
Number of Outputs: 1
Mounting Type: Surface Mount
Voltage - Output (Min/Fixed): 0.6V
Voltage - Input (Min): 7V
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В кошику
од. на суму грн.
| FAN23SV06PMPX |
|
Виробник: onsemi
Description: IC REG BUCK ADJ 6A 34QFN
Voltage - Output (Min/Fixed): 0.6V
Voltage - Input (Min): 7V
Voltage - Output (Max): 5.5V
Synchronous Rectifier: Yes
Supplier Device Package: 34-PQFN (5.5x5)
Topology: Buck
Voltage - Input (Max): 15V
Frequency - Switching: 200kHz ~ 1.5MHz
Output Configuration: Positive
Operating Temperature: -40°C ~ 125°C (TJ)
Current - Output: 6A
Function: Step-Down
Number of Outputs: 1
Mounting Type: Surface Mount
Output Type: Adjustable
Package / Case: 34-PowerTFQFN
Packaging: Tape & Reel (TR)
Description: IC REG BUCK ADJ 6A 34QFN
Voltage - Output (Min/Fixed): 0.6V
Voltage - Input (Min): 7V
Voltage - Output (Max): 5.5V
Synchronous Rectifier: Yes
Supplier Device Package: 34-PQFN (5.5x5)
Topology: Buck
Voltage - Input (Max): 15V
Frequency - Switching: 200kHz ~ 1.5MHz
Output Configuration: Positive
Operating Temperature: -40°C ~ 125°C (TJ)
Current - Output: 6A
Function: Step-Down
Number of Outputs: 1
Mounting Type: Surface Mount
Output Type: Adjustable
Package / Case: 34-PowerTFQFN
Packaging: Tape & Reel (TR)
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В кошику
од. на суму грн.
| FAN23SV15MMPX |
|
Виробник: onsemi
Description: IC REG BUCK ADJ 15A 34QFN
Voltage - Output (Min/Fixed): 0.6V
Voltage - Input (Min): 7V
Voltage - Output (Max): 5.5V
Synchronous Rectifier: Yes
Supplier Device Package: 34-PQFN (5.5x5)
Topology: Buck
Voltage - Input (Max): 15V
Frequency - Switching: 200kHz ~ 1MHz
Output Configuration: Positive
Operating Temperature: -40°C ~ 125°C (TJ)
Current - Output: 15A
Function: Step-Down
Number of Outputs: 1
Mounting Type: Surface Mount
Output Type: Adjustable
Package / Case: 34-PowerTFQFN
Packaging: Tape & Reel (TR)
Description: IC REG BUCK ADJ 15A 34QFN
Voltage - Output (Min/Fixed): 0.6V
Voltage - Input (Min): 7V
Voltage - Output (Max): 5.5V
Synchronous Rectifier: Yes
Supplier Device Package: 34-PQFN (5.5x5)
Topology: Buck
Voltage - Input (Max): 15V
Frequency - Switching: 200kHz ~ 1MHz
Output Configuration: Positive
Operating Temperature: -40°C ~ 125°C (TJ)
Current - Output: 15A
Function: Step-Down
Number of Outputs: 1
Mounting Type: Surface Mount
Output Type: Adjustable
Package / Case: 34-PowerTFQFN
Packaging: Tape & Reel (TR)
товару немає в наявності
Мінімальне замовлення: 3000 шт
В кошику
од. на суму грн.
| FDMC8360L |
|
Виробник: onsemi
Description: MOSFET N-CH 40V 27A/80A POWER33
Rds On (Max) @ Id, Vgs: 2.1mOhm @ 27A, 10V
Current - Continuous Drain (Id) @ 25°C: 27A (Ta), 80A (Tc)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: 8-PowerWDFN
Packaging: Tape & Reel (TR)
Input Capacitance (Ciss) (Max) @ Vds: 5795 pF @ 20 V
Gate Charge (Qg) (Max) @ Vgs: 80 nC @ 10 V
Drain to Source Voltage (Vdss): 40 V
Vgs (Max): ±20V
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Part Status: Active
Supplier Device Package: Power33
Vgs(th) (Max) @ Id: 3V @ 250µA
Power Dissipation (Max): 2.3W (Ta), 54W (Tc)
Description: MOSFET N-CH 40V 27A/80A POWER33
Rds On (Max) @ Id, Vgs: 2.1mOhm @ 27A, 10V
Current - Continuous Drain (Id) @ 25°C: 27A (Ta), 80A (Tc)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: 8-PowerWDFN
Packaging: Tape & Reel (TR)
Input Capacitance (Ciss) (Max) @ Vds: 5795 pF @ 20 V
Gate Charge (Qg) (Max) @ Vgs: 80 nC @ 10 V
Drain to Source Voltage (Vdss): 40 V
Vgs (Max): ±20V
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Part Status: Active
Supplier Device Package: Power33
Vgs(th) (Max) @ Id: 3V @ 250µA
Power Dissipation (Max): 2.3W (Ta), 54W (Tc)
товару немає в наявності
Мінімальне замовлення: 3000 шт
В кошику
од. на суму грн.
| FDMC86570L |
|
Виробник: onsemi
Description: MOSFET N-CH 60V 18A/56A POWER33
Input Capacitance (Ciss) (Max) @ Vds: 6705 pF @ 30 V
Gate Charge (Qg) (Max) @ Vgs: 88 nC @ 10 V
Drain to Source Voltage (Vdss): 60 V
Vgs (Max): ±20V
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Supplier Device Package: Power33
Vgs(th) (Max) @ Id: 3V @ 250µA
Power Dissipation (Max): 2.3W (Ta), 54W (Tc)
Rds On (Max) @ Id, Vgs: 4.3mOhm @ 18A, 10V
Current - Continuous Drain (Id) @ 25°C: 18A (Ta), 56A (Tc)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: 8-PowerWDFN
Packaging: Tape & Reel (TR)
Description: MOSFET N-CH 60V 18A/56A POWER33
Input Capacitance (Ciss) (Max) @ Vds: 6705 pF @ 30 V
Gate Charge (Qg) (Max) @ Vgs: 88 nC @ 10 V
Drain to Source Voltage (Vdss): 60 V
Vgs (Max): ±20V
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Supplier Device Package: Power33
Vgs(th) (Max) @ Id: 3V @ 250µA
Power Dissipation (Max): 2.3W (Ta), 54W (Tc)
Rds On (Max) @ Id, Vgs: 4.3mOhm @ 18A, 10V
Current - Continuous Drain (Id) @ 25°C: 18A (Ta), 56A (Tc)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: 8-PowerWDFN
Packaging: Tape & Reel (TR)
на замовлення 3000 шт:
термін постачання 21-31 дні (днів)
| Кількість | Ціна без ПДВ |
|---|---|
| 3000+ | 94.85 грн |
| FDMS86350 |
|
Виробник: onsemi
Description: MOSFET N-CH 80V 25A/130A POWER56
Packaging: Tape & Reel (TR)
Package / Case: 8-PowerTDFN
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 25A (Ta), 130A (Tc)
Rds On (Max) @ Id, Vgs: 2.4mOhm @ 25A, 10V
Power Dissipation (Max): 2.7W (Ta), 156W (Tc)
Vgs(th) (Max) @ Id: 4.5V @ 250µA
Supplier Device Package: 8-PQFN (5x6)
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 8V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 80 V
Gate Charge (Qg) (Max) @ Vgs: 155 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 10680 pF @ 40 V
Description: MOSFET N-CH 80V 25A/130A POWER56
Packaging: Tape & Reel (TR)
Package / Case: 8-PowerTDFN
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 25A (Ta), 130A (Tc)
Rds On (Max) @ Id, Vgs: 2.4mOhm @ 25A, 10V
Power Dissipation (Max): 2.7W (Ta), 156W (Tc)
Vgs(th) (Max) @ Id: 4.5V @ 250µA
Supplier Device Package: 8-PQFN (5x6)
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 8V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 80 V
Gate Charge (Qg) (Max) @ Vgs: 155 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 10680 pF @ 40 V
товару немає в наявності
Мінімальне замовлення: 3000 шт
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од. на суму грн.
| FDMC86340 |
|
Виробник: onsemi
Description: MOSFET N-CH 80V 14A/48A POWER33
Input Capacitance (Ciss) (Max) @ Vds: 3885 pF @ 40 V
Gate Charge (Qg) (Max) @ Vgs: 53 nC @ 10 V
Drain to Source Voltage (Vdss): 80 V
Vgs (Max): ±20V
Drive Voltage (Max Rds On, Min Rds On): 8V, 10V
Supplier Device Package: Power33
Vgs(th) (Max) @ Id: 4V @ 250µA
Power Dissipation (Max): 2.3W (Ta), 54W (Tc)
Rds On (Max) @ Id, Vgs: 6.5mOhm @ 14A, 10V
Current - Continuous Drain (Id) @ 25°C: 14A (Ta), 48A (Tc)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: 8-PowerWDFN
Packaging: Cut Tape (CT)
Description: MOSFET N-CH 80V 14A/48A POWER33
Input Capacitance (Ciss) (Max) @ Vds: 3885 pF @ 40 V
Gate Charge (Qg) (Max) @ Vgs: 53 nC @ 10 V
Drain to Source Voltage (Vdss): 80 V
Vgs (Max): ±20V
Drive Voltage (Max Rds On, Min Rds On): 8V, 10V
Supplier Device Package: Power33
Vgs(th) (Max) @ Id: 4V @ 250µA
Power Dissipation (Max): 2.3W (Ta), 54W (Tc)
Rds On (Max) @ Id, Vgs: 6.5mOhm @ 14A, 10V
Current - Continuous Drain (Id) @ 25°C: 14A (Ta), 48A (Tc)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: 8-PowerWDFN
Packaging: Cut Tape (CT)
на замовлення 5281 шт:
термін постачання 21-31 дні (днів)
| Кількість | Ціна без ПДВ |
|---|---|
| 2+ | 198.38 грн |
| 10+ | 123.27 грн |
| 100+ | 84.78 грн |
| 500+ | 64.10 грн |
| 1000+ | 59.13 грн |
| FDMC86570L |
|
Виробник: onsemi
Description: MOSFET N-CH 60V 18A/56A POWER33
Gate Charge (Qg) (Max) @ Vgs: 88 nC @ 10 V
Drain to Source Voltage (Vdss): 60 V
Vgs (Max): ±20V
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Supplier Device Package: Power33
Vgs(th) (Max) @ Id: 3V @ 250µA
Power Dissipation (Max): 2.3W (Ta), 54W (Tc)
Rds On (Max) @ Id, Vgs: 4.3mOhm @ 18A, 10V
Current - Continuous Drain (Id) @ 25°C: 18A (Ta), 56A (Tc)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: 8-PowerWDFN
Packaging: Cut Tape (CT)
Input Capacitance (Ciss) (Max) @ Vds: 6705 pF @ 30 V
Description: MOSFET N-CH 60V 18A/56A POWER33
Gate Charge (Qg) (Max) @ Vgs: 88 nC @ 10 V
Drain to Source Voltage (Vdss): 60 V
Vgs (Max): ±20V
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Supplier Device Package: Power33
Vgs(th) (Max) @ Id: 3V @ 250µA
Power Dissipation (Max): 2.3W (Ta), 54W (Tc)
Rds On (Max) @ Id, Vgs: 4.3mOhm @ 18A, 10V
Current - Continuous Drain (Id) @ 25°C: 18A (Ta), 56A (Tc)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: 8-PowerWDFN
Packaging: Cut Tape (CT)
Input Capacitance (Ciss) (Max) @ Vds: 6705 pF @ 30 V
на замовлення 4308 шт:
термін постачання 21-31 дні (днів)
| Кількість | Ціна без ПДВ |
|---|---|
| 2+ | 233.25 грн |
| 10+ | 164.02 грн |
| 100+ | 127.59 грн |
| 500+ | 102.96 грн |
| 1000+ | 88.80 грн |
| FDMC8360L |
|
Виробник: onsemi
Description: MOSFET N-CH 40V 27A/80A POWER33
Mounting Type: Surface Mount
Package / Case: 8-PowerWDFN
Packaging: Cut Tape (CT)
Input Capacitance (Ciss) (Max) @ Vds: 5795 pF @ 20 V
Gate Charge (Qg) (Max) @ Vgs: 80 nC @ 10 V
Drain to Source Voltage (Vdss): 40 V
Vgs (Max): ±20V
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Part Status: Active
Supplier Device Package: Power33
Vgs(th) (Max) @ Id: 3V @ 250µA
Power Dissipation (Max): 2.3W (Ta), 54W (Tc)
Rds On (Max) @ Id, Vgs: 2.1mOhm @ 27A, 10V
Current - Continuous Drain (Id) @ 25°C: 27A (Ta), 80A (Tc)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 150°C (TJ)
Description: MOSFET N-CH 40V 27A/80A POWER33
Mounting Type: Surface Mount
Package / Case: 8-PowerWDFN
Packaging: Cut Tape (CT)
Input Capacitance (Ciss) (Max) @ Vds: 5795 pF @ 20 V
Gate Charge (Qg) (Max) @ Vgs: 80 nC @ 10 V
Drain to Source Voltage (Vdss): 40 V
Vgs (Max): ±20V
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Part Status: Active
Supplier Device Package: Power33
Vgs(th) (Max) @ Id: 3V @ 250µA
Power Dissipation (Max): 2.3W (Ta), 54W (Tc)
Rds On (Max) @ Id, Vgs: 2.1mOhm @ 27A, 10V
Current - Continuous Drain (Id) @ 25°C: 27A (Ta), 80A (Tc)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 150°C (TJ)
на замовлення 1059 шт:
термін постачання 21-31 дні (днів)
| Кількість | Ціна без ПДВ |
|---|---|
| 2+ | 165.83 грн |
| 10+ | 102.16 грн |
| 100+ | 69.51 грн |
| 500+ | 52.11 грн |
| 1000+ | 47.89 грн |
| FCPF190N60-F152 |
|
Виробник: onsemi
Description: MOSFET N-CH 600V 20.2A TO220F
Packaging: Tube
Package / Case: TO-220-3 Full Pack
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 20.2A (Tc)
Rds On (Max) @ Id, Vgs: 199mOhm @ 10A, 10V
Power Dissipation (Max): 39W (Tc)
Vgs(th) (Max) @ Id: 3.5V @ 250µA
Supplier Device Package: TO-220F-3
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 600 V
Gate Charge (Qg) (Max) @ Vgs: 74 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 2950 pF @ 25 V
Description: MOSFET N-CH 600V 20.2A TO220F
Packaging: Tube
Package / Case: TO-220-3 Full Pack
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 20.2A (Tc)
Rds On (Max) @ Id, Vgs: 199mOhm @ 10A, 10V
Power Dissipation (Max): 39W (Tc)
Vgs(th) (Max) @ Id: 3.5V @ 250µA
Supplier Device Package: TO-220F-3
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 600 V
Gate Charge (Qg) (Max) @ Vgs: 74 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 2950 pF @ 25 V
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| LV5680PGEVB |
|
Виробник: onsemi
Description: BOARD EVAL FOR LV5680P
Part Status: Active
Channels per IC: 4 - Quad
Supplied Contents: Board(s)
Utilized IC / Part: LV5680P
Board Type: Fully Populated
Regulator Type: Positive Fixed and Adjustable
Current - Output: 1.3A, 300mA, 300mA, 200mA
Voltage - Input: 7.5V ~ 16V
Packaging: Bulk
Description: BOARD EVAL FOR LV5680P
Part Status: Active
Channels per IC: 4 - Quad
Supplied Contents: Board(s)
Utilized IC / Part: LV5680P
Board Type: Fully Populated
Regulator Type: Positive Fixed and Adjustable
Current - Output: 1.3A, 300mA, 300mA, 200mA
Voltage - Input: 7.5V ~ 16V
Packaging: Bulk
на замовлення 2 шт:
термін постачання 21-31 дні (днів)
| Кількість | Ціна без ПДВ |
|---|---|
| 1+ | 7408.12 грн |
| LV5980MCGEVB |
|
Виробник: onsemi
Description: EVAL BOARD FOR LV5980MC
Contents: Board(s)
Part Status: Active
Outputs and Type: 1 Non-Isolated Output
Main Purpose: DC/DC, Step Down
Supplied Contents: Board(s)
Utilized IC / Part: LV5980MC
Board Type: Fully Populated
Regulator Topology: Buck
Frequency - Switching: 370kHz
Current - Output: 3A
Voltage - Input: 4.5V ~ 23V
Voltage - Output: 5V
Packaging: Bulk
Description: EVAL BOARD FOR LV5980MC
Contents: Board(s)
Part Status: Active
Outputs and Type: 1 Non-Isolated Output
Main Purpose: DC/DC, Step Down
Supplied Contents: Board(s)
Utilized IC / Part: LV5980MC
Board Type: Fully Populated
Regulator Topology: Buck
Frequency - Switching: 370kHz
Current - Output: 3A
Voltage - Input: 4.5V ~ 23V
Voltage - Output: 5V
Packaging: Bulk
на замовлення 2 шт:
термін постачання 21-31 дні (днів)
| Кількість | Ціна без ПДВ |
|---|---|
| 1+ | 4726.16 грн |
| LV8829LFQAGEVK |
|
Виробник: onsemi
Description: EVAL BOARD FOR LV8829LFQA
Primary Attributes: Motors (BLDC)
Supplied Contents: Board(s), Cable(s), Power Supply
Utilized IC / Part: LV8829LFQA
Type: Power Management
Function: Motor Controller/Driver
Packaging: Bulk
Description: EVAL BOARD FOR LV8829LFQA
Primary Attributes: Motors (BLDC)
Supplied Contents: Board(s), Cable(s), Power Supply
Utilized IC / Part: LV8829LFQA
Type: Power Management
Function: Motor Controller/Driver
Packaging: Bulk
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В кошику
од. на суму грн.
| MC34063LBBGEVB |
|
Виробник: onsemi
Description: EVAL BOARD FOR MC34063A
Packaging: Bulk
Voltage - Output: -12V
Voltage - Input: 3V ~ 40V
Current - Output: 1.5A
Frequency - Switching: 100kHz
Regulator Topology: Inverting
Board Type: Fully Populated
Utilized IC / Part: MC34063A
Supplied Contents: Board(s)
Main Purpose: DC/DC, Negative Inverter
Outputs and Type: 1 Non-Isolated Output
Part Status: Active
Contents: Board(s)
Description: EVAL BOARD FOR MC34063A
Packaging: Bulk
Voltage - Output: -12V
Voltage - Input: 3V ~ 40V
Current - Output: 1.5A
Frequency - Switching: 100kHz
Regulator Topology: Inverting
Board Type: Fully Populated
Utilized IC / Part: MC34063A
Supplied Contents: Board(s)
Main Purpose: DC/DC, Negative Inverter
Outputs and Type: 1 Non-Isolated Output
Part Status: Active
Contents: Board(s)
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В кошику
од. на суму грн.
| NCL30081LEDGEVB |
|
Виробник: onsemi
Description: EVAL BOARD FOR NCL30081
Outputs and Type: 1 Isolated Output
Utilized IC / Part: NCL30081
Current - Output / Channel: 360mA
Contents: Board(s)
Voltage - Input: 90 ~ 265 VAC
Voltage - Output: 9V ~ 10.5V
Features: Dimmable
Packaging: Bulk
Description: EVAL BOARD FOR NCL30081
Outputs and Type: 1 Isolated Output
Utilized IC / Part: NCL30081
Current - Output / Channel: 360mA
Contents: Board(s)
Voltage - Input: 90 ~ 265 VAC
Voltage - Output: 9V ~ 10.5V
Features: Dimmable
Packaging: Bulk
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В кошику
од. на суму грн.
| NCL30082FLYGEVB |
|
Виробник: onsemi
Description: EVAL BOARD FOR NCL30082
Outputs and Type: 1 Isolated Output
Utilized IC / Part: NCL30082
Current - Output / Channel: 500mA
Contents: Board(s)
Voltage - Input: 100 ~ 265 VAC
Voltage - Output: 14V ~ 17V
Features: Dimmable
Packaging: Bulk
Description: EVAL BOARD FOR NCL30082
Outputs and Type: 1 Isolated Output
Utilized IC / Part: NCL30082
Current - Output / Channel: 500mA
Contents: Board(s)
Voltage - Input: 100 ~ 265 VAC
Voltage - Output: 14V ~ 17V
Features: Dimmable
Packaging: Bulk
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В кошику
од. на суму грн.
| NCN51206GEVB |
|
Виробник: onsemi
Description: EVAL BOARD FOR NCN5120
Part Status: Obsolete
Embedded: Yes, MCU, 16-Bit
Secondary Attributes: On-Board LEDs
Contents: Board(s)
Supplied Contents: Board(s)
Utilized IC / Part: NCN5120
Type: Interface
Function: KNX
Packaging: Bulk
Description: EVAL BOARD FOR NCN5120
Part Status: Obsolete
Embedded: Yes, MCU, 16-Bit
Secondary Attributes: On-Board LEDs
Contents: Board(s)
Supplied Contents: Board(s)
Utilized IC / Part: NCN5120
Type: Interface
Function: KNX
Packaging: Bulk
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В кошику
од. на суму грн.
| NCN8024RDWGEVB |
|
Виробник: onsemi
Description: BOARD EVAL FOR NCN8024RDW
Embedded: No
Supplied Contents: Board(s)
Utilized IC / Part: NCN8024R
Type: Interface
Function: Smart Card
Packaging: Bulk
Description: BOARD EVAL FOR NCN8024RDW
Embedded: No
Supplied Contents: Board(s)
Utilized IC / Part: NCN8024R
Type: Interface
Function: Smart Card
Packaging: Bulk
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В кошику
од. на суму грн.
| NCP1072DIPGEVB |
|
Виробник: onsemi
Description: EVAL BOARD FOR NCP1072
Packaging: Bulk
Power - Output: 6W
Outputs and Type: 1 Isolated Output
Main Purpose: AC/DC, Secondary Side
Utilized IC / Part: NCP1072
Regulator Topology: Flyback
Frequency - Switching: 100kHz
Contents: Board(s)
Current - Output: 500mA
Voltage - Input: 50 ~ 265 VAC
Voltage - Output: 12V
Description: EVAL BOARD FOR NCP1072
Packaging: Bulk
Power - Output: 6W
Outputs and Type: 1 Isolated Output
Main Purpose: AC/DC, Secondary Side
Utilized IC / Part: NCP1072
Regulator Topology: Flyback
Frequency - Switching: 100kHz
Contents: Board(s)
Current - Output: 500mA
Voltage - Input: 50 ~ 265 VAC
Voltage - Output: 12V
товару немає в наявності
В кошику
од. на суму грн.