| Фото | Назва | Виробник | Інформація | Доступність | Ціна без ПДВ | ||||||||||||||||
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SMMSD4148T1G | onsemi |
Description: DIODE STANDARD 100V 200MA SOD123Packaging: Cut Tape (CT) Package / Case: SOD-123 Mounting Type: Surface Mount Speed: Small Signal =< 200mA (Io), Any Speed Reverse Recovery Time (trr): 4 ns Technology: Standard Capacitance @ Vr, F: 4pF @ 0V, 1MHz Current - Average Rectified (Io): 200mA Supplier Device Package: SOD-123 Operating Temperature - Junction: -55°C ~ 150°C Part Status: Active Voltage - DC Reverse (Vr) (Max): 100 V Voltage - Forward (Vf) (Max) @ If: 1 V @ 10 mA Current - Reverse Leakage @ Vr: 5 µA @ 75 V Grade: Automotive Qualification: AEC-Q101 |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||||||||||
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SMMBTA06LT1G | onsemi |
Description: TRANS NPN 80V 0.5A SOT23-3Packaging: Cut Tape (CT) Package / Case: TO-236-3, SC-59, SOT-23-3 Mounting Type: Surface Mount Transistor Type: NPN Operating Temperature: -55°C ~ 150°C (TJ) Vce Saturation (Max) @ Ib, Ic: 250mV @ 10mA, 100mA Current - Collector Cutoff (Max): 100nA DC Current Gain (hFE) (Min) @ Ic, Vce: 100 @ 100mA, 1V Frequency - Transition: 100MHz Supplier Device Package: SOT-23-3 (TO-236) Part Status: Active Current - Collector (Ic) (Max): 500 mA Voltage - Collector Emitter Breakdown (Max): 80 V Power - Max: 225 mW |
на замовлення 42497 шт: термін постачання 21-31 дні (днів) |
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SMMUN2214LT1G | onsemi |
Description: TRANS PREBIAS NPN 50V SOT23-3Packaging: Cut Tape (CT) Package / Case: TO-236-3, SC-59, SOT-23-3 Mounting Type: Surface Mount Transistor Type: NPN - Pre-Biased Vce Saturation (Max) @ Ib, Ic: 250mV @ 300µA, 10mA Current - Collector Cutoff (Max): 500nA DC Current Gain (hFE) (Min) @ Ic, Vce: 80 @ 5mA, 10V Supplier Device Package: SOT-23-3 (TO-236) Part Status: Active Current - Collector (Ic) (Max): 100 mA Voltage - Collector Emitter Breakdown (Max): 50 V Power - Max: 246 mW Resistor - Base (R1): 10 kOhms Resistor - Emitter Base (R2): 47 kOhms Grade: Automotive Qualification: AEC-Q101 Resistors Included: R1 and R2 |
на замовлення 86222 шт: термін постачання 21-31 дні (днів) |
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NVF3055L108T1G | onsemi |
Description: MOSFET N-CH 60V 3A SOT223Packaging: Cut Tape (CT) Package / Case: TO-261-4, TO-261AA Mounting Type: Surface Mount Operating Temperature: -55°C ~ 175°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 3A (Ta) Rds On (Max) @ Id, Vgs: 120mOhm @ 1.5A, 5V Power Dissipation (Max): 1.3W (Ta) Vgs(th) (Max) @ Id: 2V @ 250µA Supplier Device Package: SOT-223 (TO-261) Grade: Automotive Part Status: Active Drive Voltage (Max Rds On, Min Rds On): 5V Vgs (Max): ±15V Drain to Source Voltage (Vdss): 60 V Gate Charge (Qg) (Max) @ Vgs: 15 nC @ 5 V Input Capacitance (Ciss) (Max) @ Vds: 440 pF @ 25 V Qualification: AEC-Q101 |
на замовлення 36588 шт: термін постачання 21-31 дні (днів) |
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NJVNJD2873T4G-VF01 | onsemi |
Description: TRANS NPN 50V 2A DPAK |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||||||||||
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NRVBS360T3G | onsemi |
Description: DIODE SCHOTTKY 60V 3A SMCPackaging: Cut Tape (CT) Package / Case: DO-214AB, SMC Mounting Type: Surface Mount Speed: Fast Recovery =< 500ns, > 200mA (Io) Technology: Schottky Current - Average Rectified (Io): 3A Supplier Device Package: SMC Operating Temperature - Junction: -65°C ~ 175°C Voltage - DC Reverse (Vr) (Max): 60 V Voltage - Forward (Vf) (Max) @ If: 630 mV @ 3 A Current - Reverse Leakage @ Vr: 30 µA @ 60 V |
на замовлення 4151 шт: термін постачання 21-31 дні (днів) |
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NUP4114UPXV6T1G | onsemi |
Description: TVS DIODE 5.5VWM 10VC SOT563Packaging: Cut Tape (CT) Package / Case: SOT-563, SOT-666 Mounting Type: Surface Mount Type: Steering (Rail to Rail) Operating Temperature: -40°C ~ 125°C (TJ) Applications: General Purpose Capacitance @ Frequency: 0.6pF @ 1MHz Current - Peak Pulse (10/1000µs): 8A (8/20µs) Voltage - Reverse Standoff (Typ): 5.5V (Max) Supplier Device Package: SOT-563 Unidirectional Channels: 4 Voltage - Breakdown (Min): 5.5V Voltage - Clamping (Max) @ Ipp: 10V Power Line Protection: Yes Part Status: Active |
на замовлення 36436 шт: термін постачання 21-31 дні (днів) |
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NCP565D2T33R4G | onsemi |
Description: IC REG LINEAR 3.3V 1.5A D2PAK-3Packaging: Cut Tape (CT) Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB Output Type: Fixed Mounting Type: Surface Mount Current - Output: 1.5A Operating Temperature: -40°C ~ 125°C Output Configuration: Positive Current - Quiescent (Iq): 3 mA Voltage - Input (Max): 9V Number of Regulators: 1 Supplier Device Package: D2PAK-3 Voltage - Output (Min/Fixed): 3.3V Part Status: Active PSRR: 85dB ~ 75db (120Hz ~ 1kHz) Protection Features: Over Current, Over Temperature |
на замовлення 1267 шт: термін постачання 21-31 дні (днів) |
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NCV4276BDSADJR4G | onsemi |
Description: IC REG LIN POS ADJ 400MA D2PAK-5Packaging: Cut Tape (CT) Package / Case: TO-263-6, D2PAK (5 Leads + Tab), TO-263BA Output Type: Adjustable Mounting Type: Surface Mount Current - Output: 400mA Operating Temperature: -40°C ~ 150°C Output Configuration: Positive Current - Quiescent (Iq): 200 µA Voltage - Input (Max): 45V Number of Regulators: 1 Supplier Device Package: D2PAK-5 Voltage - Output (Max): 20V Voltage - Output (Min/Fixed): 2.5V Control Features: Enable Grade: Automotive Part Status: Not For New Designs PSRR: 70dB (100Hz) Voltage Dropout (Max): 0.5V @ 250mA Protection Features: Over Temperature, Reverse Polarity, Short Circuit Current - Supply (Max): 35 mA Qualification: AEC-Q100 |
на замовлення 12779 шт: термін постачання 21-31 дні (днів) |
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NB3N2304NZMNR4G | onsemi |
Description: IC CLK BUFFER 1:4 140MHZ 8DFNPackaging: Cut Tape (CT) Package / Case: 8-VFDFN Exposed Pad Number of Circuits: 1 Mounting Type: Surface Mount Output: LVCMOS, LVTTL Type: Fanout Buffer (Distribution) Input: LVCMOS, LVTTL Operating Temperature: -40°C ~ 85°C Voltage - Supply: 3V ~ 3.6V Ratio - Input:Output: 1:4 Differential - Input:Output: No/No Supplier Device Package: 8-DFN (2x2) Frequency - Max: 140 MHz |
на замовлення 1518 шт: термін постачання 21-31 дні (днів) |
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ADT7461AARMZ-R | onsemi |
Description: SENSOR DIGITAL -40C-120C MICRO8Features: One-Shot, Output Switch, Programmable Limit, Standby Mode Packaging: Cut Tape (CT) Package / Case: 8-TSSOP, 8-MSOP (0.118", 3.00mm Width) Output Type: SMBus Mounting Type: Surface Mount Operating Temperature: -40°C ~ 120°C Voltage - Supply: 3V ~ 3.6V Sensor Type: Digital, Local/Remote Resolution: 8 b Supplier Device Package: 8-MSOP Test Condition: 0°C ~ 70°C (-40°C ~ 100°C) Accuracy - Highest (Lowest): ±1°C (±2.5°C) Sensing Temperature - Local: -40°C ~ 120°C Sensing Temperature - Remote: -64°C ~ 191°C |
на замовлення 5118 шт: термін постачання 21-31 дні (днів) |
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ADM1021AARQZ-R | onsemi |
Description: IC TEMP SENSOR DUAL3/5.5V 16QSOPPackaging: Cut Tape (CT) Package / Case: 16-SSOP (0.154", 3.90mm Width) Output Type: SMBus Mounting Type: Surface Mount Function: Temp Monitoring System (Sensor) Accuracy: ±3°C Local(Max), ±5°C Remote(Max) Operating Temperature: 0°C ~ 100°C Voltage - Supply: 3V ~ 5.5V Sensor Type: Internal and External Sensing Temperature: 0°C ~ 100°C, External Sensor Topology: ADC, Comparator, Multiplexer, Register Bank Output Alarm: Yes Output Fan: No Supplier Device Package: 16-QSOP Part Status: Active |
на замовлення 1430 шт: термін постачання 21-31 дні (днів) |
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ADT7462ACPZ-REEL | onsemi |
Description: IC TEMP/VOLT MONITOR 32-LFCSPPackaging: Cut Tape (CT) Package / Case: 32-VFQFN Exposed Pad, CSP Output Type: SMBus Mounting Type: Surface Mount Function: Fan Control, Temp Monitor Accuracy: ±4°C(Max) Operating Temperature: -40°C ~ 125°C Voltage - Supply: 3V ~ 5.5V Sensor Type: Internal and External Sensing Temperature: -40°C ~ 125°C, External Sensor Topology: ADC, Comparator, Multiplexer, Register Bank Output Alarm: Yes Output Fan: Yes Supplier Device Package: 32-LFCSP-VQ (5x5) |
на замовлення 1878 шт: термін постачання 21-31 дні (днів) |
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NB6N14SMNR2G | onsemi |
Description: IC CLK BUFFER 1:4 2GHZ 16QFNFrequency - Max: 2 GHz Supplier Device Package: 16-QFN (3x3) Differential - Input:Output: Yes/Yes Ratio - Input:Output: 1:4 Voltage - Supply: 3V ~ 3.6V Operating Temperature: -40°C ~ 85°C Input: CML, LVDS, LVPECL Type: Fanout Buffer (Distribution), Translator Output: LVDS Mounting Type: Surface Mount Number of Circuits: 1 Package / Case: 16-VFQFN Exposed Pad Packaging: Cut Tape (CT) |
на замовлення 1434 шт: термін постачання 21-31 дні (днів) |
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FEBSPM3SPM45-M01MTCA-GEVB | onsemi |
Description: EVAL BOARD FOR FNB41560Part Status: Obsolete Embedded: No Primary Attributes: Motors (BLAC, BLDC, PMSM) Supplied Contents: Board(s) Utilized IC / Part: FNB41560 Type: Power Management Function: Motor Controller/Driver Packaging: Box Secondary Attributes: Short-Circuit Protection Contents: Board(s) |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||||||||||
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FAN7390AMX1 | onsemi |
Description: IC GATE DRVR HALF-BRIDGE 14SOPDriven Configuration: Half-Bridge Channel Type: Independent Rise / Fall Time (Typ): 25ns, 20ns Supplier Device Package: 14-SOIC High Side Voltage - Max (Bootstrap): 600 V Input Type: Non-Inverting Voltage - Supply: 10V ~ 20V Operating Temperature: -40°C ~ 150°C (TJ) Mounting Type: Surface Mount Package / Case: 14-SOIC (0.154", 3.90mm Width) Packaging: Cut Tape (CT) DigiKey Programmable: Not Verified Part Status: Last Time Buy Current - Peak Output (Source, Sink): 4.5A, 4.5A Logic Voltage - VIL, VIH: 1.2V, 2.5V Gate Type: IGBT, N-Channel MOSFET Number of Drivers: 2 |
на замовлення 1532 шт: термін постачання 21-31 дні (днів) |
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FDB38N30U | onsemi |
Description: MOSFET N CH 300V 38A D2PAKPackaging: Cut Tape (CT) Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB Mounting Type: Surface Mount Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 38A (Tc) Rds On (Max) @ Id, Vgs: 120mOhm @ 19A, 10V Power Dissipation (Max): 313W (Tc) Vgs(th) (Max) @ Id: 5V @ 250µA Supplier Device Package: TO-263 (D2Pak) Part Status: Active Drive Voltage (Max Rds On, Min Rds On): 10V Vgs (Max): ±30V Drain to Source Voltage (Vdss): 300 V Gate Charge (Qg) (Max) @ Vgs: 73 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 3340 pF @ 25 V |
на замовлення 3607 шт: термін постачання 21-31 дні (днів) |
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FOD8318R2 | onsemi |
Description: OPTOISO 4.243KV 1CH GT DVR 16SOVoltage - Output Supply: 15V ~ 30V Number of Channels: 1 Pulse Width Distortion (Max): 300ns Propagation Delay tpLH / tpHL (Max): 500ns, 500ns Common Mode Transient Immunity (Min): 35kV/µs Rise / Fall Time (Typ): 34ns, 34ns Supplier Device Package: 16-SO Approval Agency: UL Voltage - Isolation: 4243Vrms Current - Output High, Low: 2.5A, 2.5A Technology: Optical Coupling Current - Peak Output: 3A Operating Temperature: -40°C ~ 100°C Mounting Type: Surface Mount Package / Case: 16-SOIC (0.295", 7.50mm Width) Packaging: Cut Tape (CT) |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||||||||||
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FDMC86248 | onsemi |
Description: MOSFET N CH 150V 3.4A POWER33Vgs(th) (Max) @ Id: 4V @ 250mA Power Dissipation (Max): 2.3W (Ta), 36W (Tc) Rds On (Max) @ Id, Vgs: 90mOhm @ 3.4A, 10V Current - Continuous Drain (Id) @ 25°C: 3.4A (Ta) FET Type: N-Channel Technology: MOSFET (Metal Oxide) Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Surface Mount Package / Case: 8-PowerTDFN Packaging: Cut Tape (CT) Input Capacitance (Ciss) (Max) @ Vds: 525 pF @ 75 V Gate Charge (Qg) (Max) @ Vgs: 9 nC @ 10 V Drain to Source Voltage (Vdss): 150 V Vgs (Max): ±20V Drive Voltage (Max Rds On, Min Rds On): 6V, 10V Supplier Device Package: Power33 |
на замовлення 13540 шт: термін постачання 21-31 дні (днів) |
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FDMC7208S | onsemi |
Description: MOSFET 2N-CH 30V 12A/16A 8PWR33Supplier Device Package: 8-Power33 (3x3) Vgs(th) (Max) @ Id: 3V @ 250µA FET Feature: Logic Level Gate Gate Charge (Qg) (Max) @ Vgs: 18nC @ 10V Rds On (Max) @ Id, Vgs: 9mOhm @ 12A, 10V Input Capacitance (Ciss) (Max) @ Vds: 1130pF @ 15V Current - Continuous Drain (Id) @ 25°C: 12A, 16A Drain to Source Voltage (Vdss): 30V Power - Max: 800mW Technology: MOSFET (Metal Oxide) Operating Temperature: -55°C ~ 150°C (TJ) Configuration: 2 N-Channel (Dual) Mounting Type: Surface Mount Package / Case: 8-PowerWDFN Packaging: Cut Tape (CT) |
на замовлення 4145 шт: термін постачання 21-31 дні (днів) |
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FDMS8820 | onsemi |
Description: MOSFET N-CH 30V 28A/116A 8PQFNInput Capacitance (Ciss) (Max) @ Vds: 5315 pF @ 15 V Gate Charge (Qg) (Max) @ Vgs: 88 nC @ 10 V Drain to Source Voltage (Vdss): 30 V Vgs (Max): ±20V Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Part Status: Active Supplier Device Package: 8-PQFN (5x6) Vgs(th) (Max) @ Id: 2.5V @ 250µA Power Dissipation (Max): 2.5W (Ta), 78W (Tc) Rds On (Max) @ Id, Vgs: 2mOhm @ 28A, 10V Current - Continuous Drain (Id) @ 25°C: 28A (Ta), 116A (Tc) FET Type: N-Channel Technology: MOSFET (Metal Oxide) Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Surface Mount Package / Case: 8-PowerTDFN Packaging: Cut Tape (CT) |
на замовлення 21741 шт: термін постачання 21-31 дні (днів) |
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FXMHD103UMX | onsemi |
Description: IC INTERFACE SPECIALIZED 12UMLPSupplier Device Package: 12-UMLP (1.8x1.8) Applications: Cell Phones, Digital Cameras, Media Players Voltage - Supply: 1.6V ~ 3.6V Mounting Type: Surface Mount Package / Case: 12-UFQFN Packaging: Cut Tape (CT) |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||||||||||
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FXL6408UMX | onsemi |
Description: IC XPNDR 400KHZ I2C 16UMLPPackaging: Cut Tape (CT) Features: POR Package / Case: 16-UFQFN Output Type: Open Drain Mounting Type: Surface Mount Interface: I2C Number of I/O: 8 Operating Temperature: -40°C ~ 85°C Voltage - Supply: 1.65V ~ 4V Clock Frequency: 400 kHz Interrupt Output: Yes Supplier Device Package: 16-UMLP (1.8x2.6) Current - Output Source/Sink: 6mA Part Status: Active DigiKey Programmable: Not Verified |
на замовлення 62840 шт: термін постачання 21-31 дні (днів) |
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FDMS86101A | onsemi |
Description: MOSFET N-CH 100V 13A/60A 8PQFNPackaging: Cut Tape (CT) Package / Case: 8-PowerTDFN Mounting Type: Surface Mount Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 13A (Ta), 60A (Tc) Rds On (Max) @ Id, Vgs: 8mOhm @ 13A, 10V Power Dissipation (Max): 2.5W (Ta), 104W (Tc) Vgs(th) (Max) @ Id: 4V @ 250µA Supplier Device Package: 8-PQFN (5x6) Part Status: Active Drive Voltage (Max Rds On, Min Rds On): 6V, 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 100 V Gate Charge (Qg) (Max) @ Vgs: 58 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 4120 pF @ 50 V |
на замовлення 1169 шт: термін постачання 21-31 дні (днів) |
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FAN53600AUC33X | onsemi |
Description: IC REG BUCK 3.3V 600MA 6WLCSPPart Status: Last Time Buy Voltage - Output (Min/Fixed): 3.3V Voltage - Input (Min): 2.3V Synchronous Rectifier: Yes Supplier Device Package: 6-WLCSP (1.23x0.88) Topology: Buck Voltage - Input (Max): 5.5V Frequency - Switching: 3MHz Output Configuration: Positive Operating Temperature: -40°C ~ 85°C (TA) Current - Output: 600mA Function: Step-Down Number of Outputs: 1 Mounting Type: Surface Mount Output Type: Fixed Package / Case: 6-UFBGA, WLCSP Packaging: Cut Tape (CT) |
на замовлення 6200 шт: термін постачання 21-31 дні (днів) |
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FAN3227TMX-F085 | onsemi |
Description: IC GATE DRVR LOW-SIDE 8SOICDigiKey Programmable: Not Verified Qualification: AEC-Q100 Grade: Automotive Logic Voltage - VIL, VIH: 0.8V, 2V Gate Type: MOSFET (N-Channel) Number of Drivers: 2 Driven Configuration: Low-Side Channel Type: Independent Rise / Fall Time (Typ): 12ns, 9ns Supplier Device Package: 8-SOIC Input Type: Non-Inverting Voltage - Supply: 4.5V ~ 18V Operating Temperature: -40°C ~ 125°C (TA) Mounting Type: Surface Mount Package / Case: 8-SOIC (0.154", 3.90mm Width) Packaging: Cut Tape (CT) Part Status: Active Current - Peak Output (Source, Sink): 3A, 3A |
на замовлення 12320 шт: термін постачання 21-31 дні (днів) |
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FDMC86260 | onsemi |
Description: MOSFET N CH 150V 5.4A POWER 33Packaging: Cut Tape (CT) Package / Case: 8-PowerWDFN Mounting Type: Surface Mount Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 5.4A (Ta), 16A (Tc) Rds On (Max) @ Id, Vgs: 34mOhm @ 5.4A, 10V Power Dissipation (Max): 2.3W (Ta), 54W (Tc) Vgs(th) (Max) @ Id: 4V @ 250µA Supplier Device Package: Power33 Part Status: Active Drive Voltage (Max Rds On, Min Rds On): 6V, 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 150 V Gate Charge (Qg) (Max) @ Vgs: 21 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 1330 pF @ 75 V |
на замовлення 1527 шт: термін постачання 21-31 дні (днів) |
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FOD8160R2 | onsemi |
Description: OPTOISO 5KV OPEN COLLECTOR 5SOPCurrent - Output / Channel: 50 mA Number of Channels: 1 Propagation Delay tpLH / tpHL (Max): 90ns, 80ns Common Mode Transient Immunity (Min): 20kV/µs Rise / Fall Time (Typ): 22ns, 9ns Supplier Device Package: 5-SOP Inputs - Side 1/Side 2: 1/0 Current - DC Forward (If) (Max): 25mA Voltage - Isolation: 5000Vrms Input Type: DC Data Rate: 10Mbps Voltage - Forward (Vf) (Typ): 1.45V Voltage - Supply: 3V ~ 5.5V Operating Temperature: -40°C ~ 100°C Mounting Type: Surface Mount Output Type: Open Collector, Schottky Clamped Package / Case: 6-SOIC (0.362", 9.20mm Width), 5 Leads Packaging: Cut Tape (CT) |
на замовлення 1000 шт: термін постачання 21-31 дні (днів) |
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6N137SDVM | onsemi |
Description: OPTOISOLTR 5KV OPEN COLL 8-SMDPackaging: Cut Tape (CT) Package / Case: 8-SMD, Gull Wing Output Type: Open Collector Mounting Type: Surface Mount Operating Temperature: -40°C ~ 100°C Voltage - Supply: 4.5V ~ 5.5V Voltage - Forward (Vf) (Typ): 1.45V Data Rate: 10Mbps Input Type: DC Voltage - Isolation: 5000Vrms Current - DC Forward (If) (Max): 50mA Inputs - Side 1/Side 2: 1/0 Supplier Device Package: 8-SMD Rise / Fall Time (Typ): 30ns, 10ns Common Mode Transient Immunity (Min): 10kV/µs (Typ) Propagation Delay tpLH / tpHL (Max): 75ns, 75ns Part Status: Active Number of Channels: 1 Current - Output / Channel: 50 mA |
на замовлення 990 шт: термін постачання 21-31 дні (днів) |
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FDMB2308PZ | onsemi |
Description: MOSFET 2P-CH 6MLPPackaging: Cut Tape (CT) Package / Case: 6-WDFN Exposed Pad Mounting Type: Surface Mount Configuration: 2 P-Channel (Dual) Common Drain Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) Power - Max: 800mW Input Capacitance (Ciss) (Max) @ Vds: 3030pF @ 10V Rds On (Max) @ Id, Vgs: 36mOhm @ 5.7A, 4.5V Gate Charge (Qg) (Max) @ Vgs: 30nC @ 10V FET Feature: Logic Level Gate Vgs(th) (Max) @ Id: 1.5V @ 250µA Supplier Device Package: 6-MLP (2x3) Part Status: Active |
на замовлення 2944 шт: термін постачання 21-31 дні (днів) |
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FDMS86152 | onsemi |
Description: MOSFET N-CH 100V 14A/45A POWER56Vgs (Max): ±20V Drive Voltage (Max Rds On, Min Rds On): 6V, 10V Part Status: Active Supplier Device Package: 8-PQFN (5x6) Vgs(th) (Max) @ Id: 4V @ 250µA Power Dissipation (Max): 2.7W (Ta), 125W (Tc) Rds On (Max) @ Id, Vgs: 6mOhm @ 14A, 10V Current - Continuous Drain (Id) @ 25°C: 14A (Ta), 45A (Tc) FET Type: N-Channel Technology: MOSFET (Metal Oxide) Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Surface Mount Package / Case: 8-PowerTDFN Packaging: Cut Tape (CT) Input Capacitance (Ciss) (Max) @ Vds: 3370 pF @ 50 V Gate Charge (Qg) (Max) @ Vgs: 50 nC @ 10 V Drain to Source Voltage (Vdss): 100 V |
на замовлення 13963 шт: термін постачання 21-31 дні (днів) |
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FODM8801CR2 | onsemi |
Description: OPTOISO 3.75KV TRANS 4-MINI-FLATPackaging: Cut Tape (CT) Package / Case: 4-SOIC (0.173", 4.40mm Width) Output Type: Transistor Mounting Type: Surface Mount Operating Temperature: -40°C ~ 125°C Voltage - Forward (Vf) (Typ): 1.35V Input Type: DC Current - Output / Channel: 30mA Voltage - Isolation: 3750Vrms Current Transfer Ratio (Min): 200% @ 1mA Vce Saturation (Max): 400mV Current Transfer Ratio (Max): 400% @ 1mA Supplier Device Package: 4-Mini-Flat Voltage - Output (Max): 75V Turn On / Turn Off Time (Typ): 6µs, 6µs Rise / Fall Time (Typ): 5µs, 5.5µs Number of Channels: 1 Current - DC Forward (If) (Max): 20 mA |
на замовлення 1067 шт: термін постачання 21-31 дні (днів) |
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FDB390N15A | onsemi |
Description: MOSFET N-CH 150V 27A D2PAKInput Capacitance (Ciss) (Max) @ Vds: 1285 pF @ 75 V Gate Charge (Qg) (Max) @ Vgs: 18.6 nC @ 10 V Drain to Source Voltage (Vdss): 150 V Vgs (Max): ±20V Rds On (Max) @ Id, Vgs: 39mOhm @ 27A, 10V Current - Continuous Drain (Id) @ 25°C: 27A (Tc) FET Type: N-Channel Technology: MOSFET (Metal Oxide) Operating Temperature: -55°C ~ 175°C (TJ) Mounting Type: Surface Mount Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB Packaging: Cut Tape (CT) Drive Voltage (Max Rds On, Min Rds On): 10V Part Status: Active Supplier Device Package: TO-263 (D2Pak) Vgs(th) (Max) @ Id: 4V @ 250µA Power Dissipation (Max): 75W (Tc) |
на замовлення 1818 шт: термін постачання 21-31 дні (днів) |
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FDMS3606AS | onsemi |
Description: MOSFET 2N-CH 30V 13A/27A POWER56Current - Continuous Drain (Id) @ 25°C: 13A, 27A Drain to Source Voltage (Vdss): 30V Power - Max: 1W Technology: MOSFET (Metal Oxide) Operating Temperature: -55°C ~ 150°C (TJ) Configuration: 2 N-Channel (Dual) Asymmetrical Mounting Type: Surface Mount Package / Case: 8-PowerTDFN Packaging: Cut Tape (CT) Supplier Device Package: Power56 Vgs(th) (Max) @ Id: 2.7V @ 250µA FET Feature: Logic Level Gate Gate Charge (Qg) (Max) @ Vgs: 29nC @ 10V Rds On (Max) @ Id, Vgs: 8mOhm @ 13A, 10V Input Capacitance (Ciss) (Max) @ Vds: 1695pF @ 15V |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||||||||||
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FSA2866UMX | onsemi |
Description: IC ANALOG SWITCH 20UMLP Number of Channels: 1 Multiplexer/Demultiplexer Circuit: 2:2 Voltage - Supply, Single (V+): 1.65V ~ 4.3V -3db Bandwidth: 210MHz On-State Resistance (Max): 3.5Ohm Applications: Telecommunications Operating Temperature: -40°C ~ 85°C (TA) Mounting Type: Surface Mount Package / Case: 20-UFQFN Exposed Pad Features: Break-Before-Make Packaging: Cut Tape (CT) Supplier Device Package: 20-UMLP (3x3) |
на замовлення 31 шт: термін постачання 21-31 дні (днів) |
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FOD3182TSR2V | onsemi |
Description: OPTOISO 5KV 1CH GATE DVR 8SMDVoltage - Output Supply: 10V ~ 30V Current - DC Forward (If) (Max): 25 mA Number of Channels: 1 Part Status: Active Pulse Width Distortion (Max): 65ns Propagation Delay tpLH / tpHL (Max): 210ns, 210ns Common Mode Transient Immunity (Min): 35kV/µs Rise / Fall Time (Typ): 38ns, 24ns Supplier Device Package: 8-SMD Approval Agency: UL, VDE Voltage - Isolation: 5000Vrms Current - Output High, Low: 2.5A, 2.5A Technology: Optical Coupling Current - Peak Output: 3A Voltage - Forward (Vf) (Typ): 1.43V Operating Temperature: -40°C ~ 100°C Mounting Type: Surface Mount Package / Case: 8-SMD, Gull Wing Packaging: Cut Tape (CT) |
на замовлення 730 шт: термін постачання 21-31 дні (днів) |
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FODM8801BR2 | onsemi |
Description: OPTOISO 3.75KV TRANS 4-MINI-FLATMounting Type: Surface Mount Output Type: Transistor Package / Case: 4-SOIC (0.173", 4.40mm Width) Packaging: Cut Tape (CT) Current - DC Forward (If) (Max): 20 mA Number of Channels: 1 Rise / Fall Time (Typ): 5µs, 5.5µs Turn On / Turn Off Time (Typ): 6µs, 6µs Voltage - Output (Max): 75V Supplier Device Package: 4-Mini-Flat Current Transfer Ratio (Max): 260% @ 1mA Vce Saturation (Max): 400mV Current Transfer Ratio (Min): 130% @ 1mA Voltage - Isolation: 3750Vrms Current - Output / Channel: 30mA Input Type: DC Voltage - Forward (Vf) (Typ): 1.35V Operating Temperature: -40°C ~ 125°C |
на замовлення 1517086 шт: термін постачання 21-31 дні (днів) |
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FODM8801AR2 | onsemi |
Description: OPTOISO 3.75KV TRANS 4-MINI-FLATPackaging: Cut Tape (CT) Current - DC Forward (If) (Max): 20 mA Number of Channels: 1 Rise / Fall Time (Typ): 5µs, 5.5µs Turn On / Turn Off Time (Typ): 6µs, 6µs Voltage - Output (Max): 75V Supplier Device Package: 4-Mini-Flat Current Transfer Ratio (Max): 160% @ 1mA Vce Saturation (Max): 400mV Current Transfer Ratio (Min): 80% @ 1mA Voltage - Isolation: 3750Vrms Current - Output / Channel: 30mA Input Type: DC Voltage - Forward (Vf) (Typ): 1.35V Operating Temperature: -40°C ~ 125°C Mounting Type: Surface Mount Output Type: Transistor Package / Case: 4-SOIC (0.173", 4.40mm Width) |
на замовлення 131682 шт: термін постачання 21-31 дні (днів) |
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FXLP4555MPX | onsemi |
Description: IC XLTR VL BIDIR 16-MLPPackaging: Cut Tape (CT) Features: SIM Card Interface Package / Case: 16-WFQFN Exposed Pad Output Type: Tri-State, Non-Inverted Mounting Type: Surface Mount Operating Temperature: -40°C ~ 85°C (TA) Supplier Device Package: 16-MLP (3x3) Channel Type: Bidirectional Translator Type: Voltage Level Channels per Circuit: 1 Voltage - VCCA: 1.65 V ~ 5.5 V Voltage - VCCB: 1.7 V ~ 3.2 V Number of Circuits: 1 |
на замовлення 33664 шт: термін постачання 21-31 дні (днів) |
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FOD3182SD | onsemi |
Description: OPTOISO 5KV 1CH GATE DVR 8SMDVoltage - Output Supply: 10V ~ 30V Current - DC Forward (If) (Max): 25 mA Number of Channels: 1 Part Status: Active Pulse Width Distortion (Max): 65ns Propagation Delay tpLH / tpHL (Max): 210ns, 210ns Common Mode Transient Immunity (Min): 35kV/µs Rise / Fall Time (Typ): 38ns, 24ns Supplier Device Package: 8-SMD Approval Agency: UL Voltage - Isolation: 5000Vrms Current - Output High, Low: 2.5A, 2.5A Technology: Optical Coupling Current - Peak Output: 3A Voltage - Forward (Vf) (Typ): 1.43V Operating Temperature: -40°C ~ 100°C Mounting Type: Surface Mount Package / Case: 8-SMD, Gull Wing Packaging: Cut Tape (CT) |
на замовлення 15436 шт: термін постачання 21-31 дні (днів) |
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FOD3182SDV | onsemi |
Description: OPTOISO 5KV 1CH GATE DVR 8SMDMounting Type: Surface Mount Package / Case: 8-SMD, Gull Wing Packaging: Cut Tape (CT) Voltage - Output Supply: 10V ~ 30V Current - DC Forward (If) (Max): 25 mA Number of Channels: 1 Part Status: Active Pulse Width Distortion (Max): 65ns Propagation Delay tpLH / tpHL (Max): 210ns, 210ns Common Mode Transient Immunity (Min): 35kV/µs Rise / Fall Time (Typ): 38ns, 24ns Supplier Device Package: 8-SMD Approval Agency: UL, VDE Voltage - Isolation: 5000Vrms Current - Output High, Low: 2.5A, 2.5A Technology: Optical Coupling Current - Peak Output: 3A Voltage - Forward (Vf) (Typ): 1.43V Operating Temperature: -40°C ~ 100°C |
на замовлення 22195 шт: термін постачання 21-31 дні (днів) |
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FMBS2383 | onsemi |
Description: TRANS NPN 160V 0.8A SUPERSOT-6Power - Max: 630 mW Voltage - Collector Emitter Breakdown (Max): 160 V Current - Collector (Ic) (Max): 800 mA Part Status: Obsolete Supplier Device Package: SuperSOT™-6 Frequency - Transition: 120MHz DC Current Gain (hFE) (Min) @ Ic, Vce: 80 @ 100mA, 5V Current - Collector Cutoff (Max): 100nA (ICBO) Vce Saturation (Max) @ Ib, Ic: 1V @ 50mA, 500mA Operating Temperature: 150°C (TJ) Transistor Type: NPN Mounting Type: Surface Mount Package / Case: SOT-23-6 Thin, TSOT-23-6 Packaging: Cut Tape (CT) |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||||||||||
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FXLA0104QFX | onsemi |
Description: IC XLTR VL BIDIR 12-UMLPPackaging: Cut Tape (CT) Features: Auto-Direction Sensing, Power-Off Protection Package / Case: 12-UFQFN Output Type: Tri-State, Non-Inverted Mounting Type: Surface Mount Operating Temperature: -40°C ~ 85°C (TA) Data Rate: 140Mbps Supplier Device Package: 12-UMLP (1.7x2) Channel Type: Bidirectional Translator Type: Voltage Level Channels per Circuit: 4 Voltage - VCCA: 1.1 V ~ 3.6 V Voltage - VCCB: 1.1 V ~ 3.6 V Number of Circuits: 1 |
на замовлення 64995 шт: термін постачання 21-31 дні (днів) |
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FAN48632UC33X | onsemi |
Description: IC REG CONV GSM PA 1OUT 16WLCSPSupplier Device Package: 16-WLCSP (1.78x1.78) Applications: Converter, GSM PA Operating Temperature: -40°C ~ 85°C Voltage - Input: 2.35V ~ 5.5V Number of Outputs: 1 Mounting Type: Surface Mount Voltage - Output: 3.3V, 3.49V Package / Case: 16-UFBGA, WLCSP Packaging: Cut Tape (CT) |
на замовлення 2999 шт: термін постачання 21-31 дні (днів) |
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FSAL200MTCX | onsemi |
Description: IC SWITCH SPDT X 4 12OHM 16TSSOP Operating Temperature: -40°C ~ 85°C (TA) Mounting Type: Surface Mount Package / Case: 16-TSSOP (0.173", 4.40mm Width) Packaging: Tape & Reel (TR) Number of Circuits: 4 Current - Leakage (IS(off)) (Max): 100µA Channel Capacitance (CS(off), CD(off)): 13pF Switch Time (Ton, Toff) (Max): 20ns, 10ns Channel-to-Channel Matching (ΔRon): 400mOhm Multiplexer/Demultiplexer Circuit: 2:1 Switch Circuit: SPDT Crosstalk: -70dB @ 30MHz Charge Injection: 7pC Voltage - Supply, Single (V+): 3V ~ 5.5V Supplier Device Package: 16-TSSOP -3db Bandwidth: 137MHz On-State Resistance (Max): 12Ohm |
на замовлення 5000 шт: термін постачання 21-31 дні (днів) |
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FSB50250AS | onsemi |
Description: MOSFET IPM 500V 1.2A 23-PWRSMDPackaging: Cut Tape (CT) Package / Case: 23-PowerSMD Module, Gull Wing Mounting Type: Surface Mount Type: MOSFET Configuration: 3 Phase Voltage - Isolation: 1500Vrms Current: 1.2 A Voltage: 500 V |
на замовлення 390 шт: термін постачання 21-31 дні (днів) |
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FSB50550AS | onsemi |
Description: MOSFET IPM 500V 2A 23-PWRSMD MODPackaging: Cut Tape (CT) Package / Case: 23-PowerSMD Module, Gull Wing Mounting Type: Surface Mount Type: MOSFET Configuration: 3 Phase Voltage - Isolation: 1500Vrms Part Status: Active Current: 2 A Voltage: 500 V |
на замовлення 164494 шт: термін постачання 21-31 дні (днів) |
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FSB50250AS | onsemi |
Description: MOSFET IPM 500V 1.2A 23-PWRSMDPackaging: Tape & Reel (TR) Package / Case: 23-PowerSMD Module, Gull Wing Mounting Type: Surface Mount Type: MOSFET Configuration: 3 Phase Voltage - Isolation: 1500Vrms Current: 1.2 A Voltage: 500 V |
товару немає в наявності |
Мінімальне замовлення: 450 шт В кошику од. на суму грн. | ||||||||||||||||
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FSB50550AS | onsemi |
Description: MOSFET IPM 500V 2A 23-PWRSMD MODPackaging: Tape & Reel (TR) Package / Case: 23-PowerSMD Module, Gull Wing Mounting Type: Surface Mount Type: MOSFET Configuration: 3 Phase Voltage - Isolation: 1500Vrms Part Status: Active Current: 2 A Voltage: 500 V |
на замовлення 164250 шт: термін постачання 21-31 дні (днів) |
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FSB50325AT | onsemi |
Description: MOSFET IPM 250V 1.7A 23-PWRDIPPackaging: Tube Package / Case: 23-PowerDIP Module, Offset Leads Mounting Type: Through Hole Type: MOSFET Configuration: 3 Phase Voltage - Isolation: 1500Vrms Current: 1.7 A Voltage: 250 V |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||||||||||
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FSB50550A | onsemi |
Description: MOSFET IPM 500V 2A 23-PWRDIP MODPackaging: Tube Package / Case: 23-PowerDIP Module (0.573", 14.56mm) Mounting Type: Through Hole Type: MOSFET Configuration: 3 Phase Voltage - Isolation: 1500Vrms Part Status: Last Time Buy Current: 2 A Voltage: 500 V |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||||||||||
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FSB50550AT | onsemi |
Description: MOSFET IPM 500V 2A 23-PWRDIP MODPackaging: Tube Package / Case: 23-PowerDIP Module (0.748", 19.00mm) Mounting Type: Through Hole Type: MOSFET Configuration: 3 Phase Voltage - Isolation: 1500Vrms Part Status: Active Current: 2 A Voltage: 500 V |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||||||||||
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FODM8801AV | onsemi |
Description: OPTOISO 3.75KV TRANS 4-MINI-FLATCurrent - DC Forward (If) (Max): 20 mA Number of Channels: 1 Rise / Fall Time (Typ): 5µs, 5.5µs Turn On / Turn Off Time (Typ): 6µs, 6µs Voltage - Output (Max): 75V Supplier Device Package: 4-Mini-Flat Current Transfer Ratio (Max): 160% @ 1mA Vce Saturation (Max): 400mV Current Transfer Ratio (Min): 80% @ 1mA Voltage - Isolation: 3750Vrms Current - Output / Channel: 30mA Input Type: DC Voltage - Forward (Vf) (Typ): 1.35V Operating Temperature: -40°C ~ 125°C Mounting Type: Surface Mount Output Type: Transistor Package / Case: 4-SOIC (0.173", 4.40mm Width) Packaging: Tube |
на замовлення 961 шт: термін постачання 21-31 дні (днів) |
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FODM8801BV | onsemi |
Description: OPTOISO 3.75KV TRANS 4-MINI-FLATPackaging: Tube Package / Case: 4-SOIC (0.173", 4.40mm Width) Output Type: Transistor Mounting Type: Surface Mount Operating Temperature: -40°C ~ 125°C Voltage - Forward (Vf) (Typ): 1.35V Input Type: DC Current - Output / Channel: 30mA Voltage - Isolation: 3750Vrms Current Transfer Ratio (Min): 130% @ 1mA Vce Saturation (Max): 400mV Current Transfer Ratio (Max): 260% @ 1mA Supplier Device Package: 4-Mini-Flat Voltage - Output (Max): 75V Turn On / Turn Off Time (Typ): 6µs, 6µs Rise / Fall Time (Typ): 5µs, 5.5µs Number of Channels: 1 Current - DC Forward (If) (Max): 20 mA |
на замовлення 238284 шт: термін постачання 21-31 дні (днів) |
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FAN7171M-F085 | onsemi |
Description: IC GATE DRVR HIGH-SIDE 8SOICQualification: AEC-Q100 Grade: Automotive Gate Type: IGBT, MOSFET (N-Channel) Number of Drivers: 1 Driven Configuration: High-Side Channel Type: Single Rise / Fall Time (Typ): 25ns, 15ns Supplier Device Package: 8-SOIC High Side Voltage - Max (Bootstrap): 600 V Input Type: Non-Inverting Voltage - Supply: 10V ~ 20V Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Surface Mount Package / Case: 8-SOIC (0.154", 3.90mm Width) Packaging: Tube DigiKey Programmable: Not Verified Part Status: Obsolete Current - Peak Output (Source, Sink): 4A, 4A Logic Voltage - VIL, VIH: 0.8V, 2.5V |
на замовлення 3265 шт: термін постачання 21-31 дні (днів) |
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FCPF260N60E-F152 | onsemi |
Description: MOSFET N-CH 600V 15A TO220FSupplier Device Package: TO-220F-3 Vgs(th) (Max) @ Id: 3.5V @ 250µA Power Dissipation (Max): 36W (Tc) Rds On (Max) @ Id, Vgs: 260mOhm @ 7.5A, 10V Current - Continuous Drain (Id) @ 25°C: 15A (Tc) FET Type: N-Channel Technology: MOSFET (Metal Oxide) Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Through Hole Package / Case: TO-220-3 Full Pack Packaging: Tube Input Capacitance (Ciss) (Max) @ Vds: 2500 pF @ 25 V Gate Charge (Qg) (Max) @ Vgs: 62 nC @ 10 V Drain to Source Voltage (Vdss): 600 V Part Status: Obsolete |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||||||||||
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FDI045N10A-F102 | onsemi |
Description: MOSFET N-CH 100V 120A I2PAKPackaging: Tube Package / Case: TO-262-3 Long Leads, I2PAK, TO-262AA Mounting Type: Through Hole Operating Temperature: -55°C ~ 175°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 120A (Tc) Rds On (Max) @ Id, Vgs: 4.5mOhm @ 100A, 10V Power Dissipation (Max): 263W (Tc) Vgs(th) (Max) @ Id: 4V @ 250µA Supplier Device Package: TO-262 (I2PAK) Part Status: Active Drive Voltage (Max Rds On, Min Rds On): 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 100 V Gate Charge (Qg) (Max) @ Vgs: 74 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 5270 pF @ 50 V |
на замовлення 222 шт: термін постачання 21-31 дні (днів) |
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FDP023N08B-F102 | onsemi |
Description: MOSFET N-CH 75V 120A TO220-3Input Capacitance (Ciss) (Max) @ Vds: 13765 pF @ 37.5 V Gate Charge (Qg) (Max) @ Vgs: 195 nC @ 10 V Drain to Source Voltage (Vdss): 75 V Vgs (Max): ±20V Drive Voltage (Max Rds On, Min Rds On): 10V Part Status: Active Supplier Device Package: TO-220-3 Vgs(th) (Max) @ Id: 3.8V @ 250µA Power Dissipation (Max): 245W (Tc) Operating Temperature: -55°C ~ 175°C (TJ) Mounting Type: Through Hole Package / Case: TO-220-3 Packaging: Tube Rds On (Max) @ Id, Vgs: 2.35mOhm @ 75A, 10V Current - Continuous Drain (Id) @ 25°C: 120A (Tc) FET Type: N-Channel Technology: MOSFET (Metal Oxide) |
на замовлення 760 шт: термін постачання 21-31 дні (днів) |
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FDP027N08B-F102 | onsemi |
Description: MOSFET N-CH 80V 120A TO220-3Packaging: Tube Package / Case: TO-220-3 Mounting Type: Through Hole Operating Temperature: -55°C ~ 175°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 120A (Tc) Rds On (Max) @ Id, Vgs: 2.7mOhm @ 100A, 10V Power Dissipation (Max): 246W (Tc) Vgs(th) (Max) @ Id: 4.5V @ 250µA Supplier Device Package: TO-220-3 Part Status: Active Drive Voltage (Max Rds On, Min Rds On): 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 80 V Gate Charge (Qg) (Max) @ Vgs: 178 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 13530 pF @ 40 V |
на замовлення 348 шт: термін постачання 21-31 дні (днів) |
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FDP030N06B-F102 | onsemi |
Description: MOSFET N-CH 60V 120A TO220-3Packaging: Tube Package / Case: TO-220-3 Mounting Type: Through Hole Operating Temperature: -55°C ~ 175°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 120A (Tc) Rds On (Max) @ Id, Vgs: 3.1mOhm @ 100A, 10V Power Dissipation (Max): 205W (Tc) Vgs(th) (Max) @ Id: 4V @ 250µA Supplier Device Package: TO-220-3 Part Status: Active Drive Voltage (Max Rds On, Min Rds On): 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 60 V Gate Charge (Qg) (Max) @ Vgs: 99 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 8030 pF @ 30 V |
на замовлення 350 шт: термін постачання 21-31 дні (днів) |
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| SMMSD4148T1G |
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Виробник: onsemi
Description: DIODE STANDARD 100V 200MA SOD123
Packaging: Cut Tape (CT)
Package / Case: SOD-123
Mounting Type: Surface Mount
Speed: Small Signal =< 200mA (Io), Any Speed
Reverse Recovery Time (trr): 4 ns
Technology: Standard
Capacitance @ Vr, F: 4pF @ 0V, 1MHz
Current - Average Rectified (Io): 200mA
Supplier Device Package: SOD-123
Operating Temperature - Junction: -55°C ~ 150°C
Part Status: Active
Voltage - DC Reverse (Vr) (Max): 100 V
Voltage - Forward (Vf) (Max) @ If: 1 V @ 10 mA
Current - Reverse Leakage @ Vr: 5 µA @ 75 V
Grade: Automotive
Qualification: AEC-Q101
Description: DIODE STANDARD 100V 200MA SOD123
Packaging: Cut Tape (CT)
Package / Case: SOD-123
Mounting Type: Surface Mount
Speed: Small Signal =< 200mA (Io), Any Speed
Reverse Recovery Time (trr): 4 ns
Technology: Standard
Capacitance @ Vr, F: 4pF @ 0V, 1MHz
Current - Average Rectified (Io): 200mA
Supplier Device Package: SOD-123
Operating Temperature - Junction: -55°C ~ 150°C
Part Status: Active
Voltage - DC Reverse (Vr) (Max): 100 V
Voltage - Forward (Vf) (Max) @ If: 1 V @ 10 mA
Current - Reverse Leakage @ Vr: 5 µA @ 75 V
Grade: Automotive
Qualification: AEC-Q101
товару немає в наявності
В кошику
од. на суму грн.
| SMMBTA06LT1G |
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Виробник: onsemi
Description: TRANS NPN 80V 0.5A SOT23-3
Packaging: Cut Tape (CT)
Package / Case: TO-236-3, SC-59, SOT-23-3
Mounting Type: Surface Mount
Transistor Type: NPN
Operating Temperature: -55°C ~ 150°C (TJ)
Vce Saturation (Max) @ Ib, Ic: 250mV @ 10mA, 100mA
Current - Collector Cutoff (Max): 100nA
DC Current Gain (hFE) (Min) @ Ic, Vce: 100 @ 100mA, 1V
Frequency - Transition: 100MHz
Supplier Device Package: SOT-23-3 (TO-236)
Part Status: Active
Current - Collector (Ic) (Max): 500 mA
Voltage - Collector Emitter Breakdown (Max): 80 V
Power - Max: 225 mW
Description: TRANS NPN 80V 0.5A SOT23-3
Packaging: Cut Tape (CT)
Package / Case: TO-236-3, SC-59, SOT-23-3
Mounting Type: Surface Mount
Transistor Type: NPN
Operating Temperature: -55°C ~ 150°C (TJ)
Vce Saturation (Max) @ Ib, Ic: 250mV @ 10mA, 100mA
Current - Collector Cutoff (Max): 100nA
DC Current Gain (hFE) (Min) @ Ic, Vce: 100 @ 100mA, 1V
Frequency - Transition: 100MHz
Supplier Device Package: SOT-23-3 (TO-236)
Part Status: Active
Current - Collector (Ic) (Max): 500 mA
Voltage - Collector Emitter Breakdown (Max): 80 V
Power - Max: 225 mW
на замовлення 42497 шт:
термін постачання 21-31 дні (днів)
| Кількість | Ціна без ПДВ |
|---|---|
| 24+ | 13.17 грн |
| 39+ | 7.69 грн |
| 100+ | 4.72 грн |
| 500+ | 3.23 грн |
| 1000+ | 2.83 грн |
| SMMUN2214LT1G |
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Виробник: onsemi
Description: TRANS PREBIAS NPN 50V SOT23-3
Packaging: Cut Tape (CT)
Package / Case: TO-236-3, SC-59, SOT-23-3
Mounting Type: Surface Mount
Transistor Type: NPN - Pre-Biased
Vce Saturation (Max) @ Ib, Ic: 250mV @ 300µA, 10mA
Current - Collector Cutoff (Max): 500nA
DC Current Gain (hFE) (Min) @ Ic, Vce: 80 @ 5mA, 10V
Supplier Device Package: SOT-23-3 (TO-236)
Part Status: Active
Current - Collector (Ic) (Max): 100 mA
Voltage - Collector Emitter Breakdown (Max): 50 V
Power - Max: 246 mW
Resistor - Base (R1): 10 kOhms
Resistor - Emitter Base (R2): 47 kOhms
Grade: Automotive
Qualification: AEC-Q101
Resistors Included: R1 and R2
Description: TRANS PREBIAS NPN 50V SOT23-3
Packaging: Cut Tape (CT)
Package / Case: TO-236-3, SC-59, SOT-23-3
Mounting Type: Surface Mount
Transistor Type: NPN - Pre-Biased
Vce Saturation (Max) @ Ib, Ic: 250mV @ 300µA, 10mA
Current - Collector Cutoff (Max): 500nA
DC Current Gain (hFE) (Min) @ Ic, Vce: 80 @ 5mA, 10V
Supplier Device Package: SOT-23-3 (TO-236)
Part Status: Active
Current - Collector (Ic) (Max): 100 mA
Voltage - Collector Emitter Breakdown (Max): 50 V
Power - Max: 246 mW
Resistor - Base (R1): 10 kOhms
Resistor - Emitter Base (R2): 47 kOhms
Grade: Automotive
Qualification: AEC-Q101
Resistors Included: R1 and R2
на замовлення 86222 шт:
термін постачання 21-31 дні (днів)
| Кількість | Ціна без ПДВ |
|---|---|
| 27+ | 11.62 грн |
| 44+ | 6.94 грн |
| 100+ | 4.28 грн |
| 500+ | 2.92 грн |
| 1000+ | 2.56 грн |
| NVF3055L108T1G |
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Виробник: onsemi
Description: MOSFET N-CH 60V 3A SOT223
Packaging: Cut Tape (CT)
Package / Case: TO-261-4, TO-261AA
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 3A (Ta)
Rds On (Max) @ Id, Vgs: 120mOhm @ 1.5A, 5V
Power Dissipation (Max): 1.3W (Ta)
Vgs(th) (Max) @ Id: 2V @ 250µA
Supplier Device Package: SOT-223 (TO-261)
Grade: Automotive
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 5V
Vgs (Max): ±15V
Drain to Source Voltage (Vdss): 60 V
Gate Charge (Qg) (Max) @ Vgs: 15 nC @ 5 V
Input Capacitance (Ciss) (Max) @ Vds: 440 pF @ 25 V
Qualification: AEC-Q101
Description: MOSFET N-CH 60V 3A SOT223
Packaging: Cut Tape (CT)
Package / Case: TO-261-4, TO-261AA
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 3A (Ta)
Rds On (Max) @ Id, Vgs: 120mOhm @ 1.5A, 5V
Power Dissipation (Max): 1.3W (Ta)
Vgs(th) (Max) @ Id: 2V @ 250µA
Supplier Device Package: SOT-223 (TO-261)
Grade: Automotive
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 5V
Vgs (Max): ±15V
Drain to Source Voltage (Vdss): 60 V
Gate Charge (Qg) (Max) @ Vgs: 15 nC @ 5 V
Input Capacitance (Ciss) (Max) @ Vds: 440 pF @ 25 V
Qualification: AEC-Q101
на замовлення 36588 шт:
термін постачання 21-31 дні (днів)
| Кількість | Ціна без ПДВ |
|---|---|
| 3+ | 104.61 грн |
| 10+ | 63.58 грн |
| 100+ | 42.24 грн |
| 500+ | 31.07 грн |
| NJVNJD2873T4G-VF01 |
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Виробник: onsemi
Description: TRANS NPN 50V 2A DPAK
Description: TRANS NPN 50V 2A DPAK
товару немає в наявності
В кошику
од. на суму грн.
| NRVBS360T3G |
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Виробник: onsemi
Description: DIODE SCHOTTKY 60V 3A SMC
Packaging: Cut Tape (CT)
Package / Case: DO-214AB, SMC
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Technology: Schottky
Current - Average Rectified (Io): 3A
Supplier Device Package: SMC
Operating Temperature - Junction: -65°C ~ 175°C
Voltage - DC Reverse (Vr) (Max): 60 V
Voltage - Forward (Vf) (Max) @ If: 630 mV @ 3 A
Current - Reverse Leakage @ Vr: 30 µA @ 60 V
Description: DIODE SCHOTTKY 60V 3A SMC
Packaging: Cut Tape (CT)
Package / Case: DO-214AB, SMC
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Technology: Schottky
Current - Average Rectified (Io): 3A
Supplier Device Package: SMC
Operating Temperature - Junction: -65°C ~ 175°C
Voltage - DC Reverse (Vr) (Max): 60 V
Voltage - Forward (Vf) (Max) @ If: 630 mV @ 3 A
Current - Reverse Leakage @ Vr: 30 µA @ 60 V
на замовлення 4151 шт:
термін постачання 21-31 дні (днів)
| Кількість | Ціна без ПДВ |
|---|---|
| 4+ | 92.21 грн |
| 10+ | 56.26 грн |
| 100+ | 37.20 грн |
| 500+ | 27.23 грн |
| 1000+ | 24.75 грн |
| NUP4114UPXV6T1G |
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Виробник: onsemi
Description: TVS DIODE 5.5VWM 10VC SOT563
Packaging: Cut Tape (CT)
Package / Case: SOT-563, SOT-666
Mounting Type: Surface Mount
Type: Steering (Rail to Rail)
Operating Temperature: -40°C ~ 125°C (TJ)
Applications: General Purpose
Capacitance @ Frequency: 0.6pF @ 1MHz
Current - Peak Pulse (10/1000µs): 8A (8/20µs)
Voltage - Reverse Standoff (Typ): 5.5V (Max)
Supplier Device Package: SOT-563
Unidirectional Channels: 4
Voltage - Breakdown (Min): 5.5V
Voltage - Clamping (Max) @ Ipp: 10V
Power Line Protection: Yes
Part Status: Active
Description: TVS DIODE 5.5VWM 10VC SOT563
Packaging: Cut Tape (CT)
Package / Case: SOT-563, SOT-666
Mounting Type: Surface Mount
Type: Steering (Rail to Rail)
Operating Temperature: -40°C ~ 125°C (TJ)
Applications: General Purpose
Capacitance @ Frequency: 0.6pF @ 1MHz
Current - Peak Pulse (10/1000µs): 8A (8/20µs)
Voltage - Reverse Standoff (Typ): 5.5V (Max)
Supplier Device Package: SOT-563
Unidirectional Channels: 4
Voltage - Breakdown (Min): 5.5V
Voltage - Clamping (Max) @ Ipp: 10V
Power Line Protection: Yes
Part Status: Active
на замовлення 36436 шт:
термін постачання 21-31 дні (днів)
| Кількість | Ціна без ПДВ |
|---|---|
| 9+ | 36.42 грн |
| 12+ | 26.64 грн |
| 100+ | 19.43 грн |
| 500+ | 14.37 грн |
| 1000+ | 12.18 грн |
| NCP565D2T33R4G |
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Виробник: onsemi
Description: IC REG LINEAR 3.3V 1.5A D2PAK-3
Packaging: Cut Tape (CT)
Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
Output Type: Fixed
Mounting Type: Surface Mount
Current - Output: 1.5A
Operating Temperature: -40°C ~ 125°C
Output Configuration: Positive
Current - Quiescent (Iq): 3 mA
Voltage - Input (Max): 9V
Number of Regulators: 1
Supplier Device Package: D2PAK-3
Voltage - Output (Min/Fixed): 3.3V
Part Status: Active
PSRR: 85dB ~ 75db (120Hz ~ 1kHz)
Protection Features: Over Current, Over Temperature
Description: IC REG LINEAR 3.3V 1.5A D2PAK-3
Packaging: Cut Tape (CT)
Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
Output Type: Fixed
Mounting Type: Surface Mount
Current - Output: 1.5A
Operating Temperature: -40°C ~ 125°C
Output Configuration: Positive
Current - Quiescent (Iq): 3 mA
Voltage - Input (Max): 9V
Number of Regulators: 1
Supplier Device Package: D2PAK-3
Voltage - Output (Min/Fixed): 3.3V
Part Status: Active
PSRR: 85dB ~ 75db (120Hz ~ 1kHz)
Protection Features: Over Current, Over Temperature
на замовлення 1267 шт:
термін постачання 21-31 дні (днів)
| Кількість | Ціна без ПДВ |
|---|---|
| 2+ | 236.35 грн |
| 10+ | 144.76 грн |
| 25+ | 123.18 грн |
| 100+ | 92.64 грн |
| 250+ | 81.36 грн |
| NCV4276BDSADJR4G |
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Виробник: onsemi
Description: IC REG LIN POS ADJ 400MA D2PAK-5
Packaging: Cut Tape (CT)
Package / Case: TO-263-6, D2PAK (5 Leads + Tab), TO-263BA
Output Type: Adjustable
Mounting Type: Surface Mount
Current - Output: 400mA
Operating Temperature: -40°C ~ 150°C
Output Configuration: Positive
Current - Quiescent (Iq): 200 µA
Voltage - Input (Max): 45V
Number of Regulators: 1
Supplier Device Package: D2PAK-5
Voltage - Output (Max): 20V
Voltage - Output (Min/Fixed): 2.5V
Control Features: Enable
Grade: Automotive
Part Status: Not For New Designs
PSRR: 70dB (100Hz)
Voltage Dropout (Max): 0.5V @ 250mA
Protection Features: Over Temperature, Reverse Polarity, Short Circuit
Current - Supply (Max): 35 mA
Qualification: AEC-Q100
Description: IC REG LIN POS ADJ 400MA D2PAK-5
Packaging: Cut Tape (CT)
Package / Case: TO-263-6, D2PAK (5 Leads + Tab), TO-263BA
Output Type: Adjustable
Mounting Type: Surface Mount
Current - Output: 400mA
Operating Temperature: -40°C ~ 150°C
Output Configuration: Positive
Current - Quiescent (Iq): 200 µA
Voltage - Input (Max): 45V
Number of Regulators: 1
Supplier Device Package: D2PAK-5
Voltage - Output (Max): 20V
Voltage - Output (Min/Fixed): 2.5V
Control Features: Enable
Grade: Automotive
Part Status: Not For New Designs
PSRR: 70dB (100Hz)
Voltage Dropout (Max): 0.5V @ 250mA
Protection Features: Over Temperature, Reverse Polarity, Short Circuit
Current - Supply (Max): 35 mA
Qualification: AEC-Q100
на замовлення 12779 шт:
термін постачання 21-31 дні (днів)
| Кількість | Ціна без ПДВ |
|---|---|
| 3+ | 125.54 грн |
| 10+ | 88.95 грн |
| 25+ | 80.98 грн |
| 100+ | 67.74 грн |
| 250+ | 63.80 грн |
| NB3N2304NZMNR4G |
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Виробник: onsemi
Description: IC CLK BUFFER 1:4 140MHZ 8DFN
Packaging: Cut Tape (CT)
Package / Case: 8-VFDFN Exposed Pad
Number of Circuits: 1
Mounting Type: Surface Mount
Output: LVCMOS, LVTTL
Type: Fanout Buffer (Distribution)
Input: LVCMOS, LVTTL
Operating Temperature: -40°C ~ 85°C
Voltage - Supply: 3V ~ 3.6V
Ratio - Input:Output: 1:4
Differential - Input:Output: No/No
Supplier Device Package: 8-DFN (2x2)
Frequency - Max: 140 MHz
Description: IC CLK BUFFER 1:4 140MHZ 8DFN
Packaging: Cut Tape (CT)
Package / Case: 8-VFDFN Exposed Pad
Number of Circuits: 1
Mounting Type: Surface Mount
Output: LVCMOS, LVTTL
Type: Fanout Buffer (Distribution)
Input: LVCMOS, LVTTL
Operating Temperature: -40°C ~ 85°C
Voltage - Supply: 3V ~ 3.6V
Ratio - Input:Output: 1:4
Differential - Input:Output: No/No
Supplier Device Package: 8-DFN (2x2)
Frequency - Max: 140 MHz
на замовлення 1518 шт:
термін постачання 21-31 дні (днів)
| Кількість | Ціна без ПДВ |
|---|---|
| 2+ | 205.35 грн |
| 10+ | 177.97 грн |
| 25+ | 167.87 грн |
| 100+ | 134.23 грн |
| 250+ | 126.03 грн |
| 500+ | 110.28 грн |
| ADT7461AARMZ-R |
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Виробник: onsemi
Description: SENSOR DIGITAL -40C-120C MICRO8
Features: One-Shot, Output Switch, Programmable Limit, Standby Mode
Packaging: Cut Tape (CT)
Package / Case: 8-TSSOP, 8-MSOP (0.118", 3.00mm Width)
Output Type: SMBus
Mounting Type: Surface Mount
Operating Temperature: -40°C ~ 120°C
Voltage - Supply: 3V ~ 3.6V
Sensor Type: Digital, Local/Remote
Resolution: 8 b
Supplier Device Package: 8-MSOP
Test Condition: 0°C ~ 70°C (-40°C ~ 100°C)
Accuracy - Highest (Lowest): ±1°C (±2.5°C)
Sensing Temperature - Local: -40°C ~ 120°C
Sensing Temperature - Remote: -64°C ~ 191°C
Description: SENSOR DIGITAL -40C-120C MICRO8
Features: One-Shot, Output Switch, Programmable Limit, Standby Mode
Packaging: Cut Tape (CT)
Package / Case: 8-TSSOP, 8-MSOP (0.118", 3.00mm Width)
Output Type: SMBus
Mounting Type: Surface Mount
Operating Temperature: -40°C ~ 120°C
Voltage - Supply: 3V ~ 3.6V
Sensor Type: Digital, Local/Remote
Resolution: 8 b
Supplier Device Package: 8-MSOP
Test Condition: 0°C ~ 70°C (-40°C ~ 100°C)
Accuracy - Highest (Lowest): ±1°C (±2.5°C)
Sensing Temperature - Local: -40°C ~ 120°C
Sensing Temperature - Remote: -64°C ~ 191°C
на замовлення 5118 шт:
термін постачання 21-31 дні (днів)
| Кількість | Ціна без ПДВ |
|---|---|
| 1+ | 396.75 грн |
| 10+ | 293.26 грн |
| 25+ | 270.96 грн |
| 100+ | 231.28 грн |
| 250+ | 220.31 грн |
| 500+ | 213.70 грн |
| 1000+ | 204.84 грн |
| ADM1021AARQZ-R |
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Виробник: onsemi
Description: IC TEMP SENSOR DUAL3/5.5V 16QSOP
Packaging: Cut Tape (CT)
Package / Case: 16-SSOP (0.154", 3.90mm Width)
Output Type: SMBus
Mounting Type: Surface Mount
Function: Temp Monitoring System (Sensor)
Accuracy: ±3°C Local(Max), ±5°C Remote(Max)
Operating Temperature: 0°C ~ 100°C
Voltage - Supply: 3V ~ 5.5V
Sensor Type: Internal and External
Sensing Temperature: 0°C ~ 100°C, External Sensor
Topology: ADC, Comparator, Multiplexer, Register Bank
Output Alarm: Yes
Output Fan: No
Supplier Device Package: 16-QSOP
Part Status: Active
Description: IC TEMP SENSOR DUAL3/5.5V 16QSOP
Packaging: Cut Tape (CT)
Package / Case: 16-SSOP (0.154", 3.90mm Width)
Output Type: SMBus
Mounting Type: Surface Mount
Function: Temp Monitoring System (Sensor)
Accuracy: ±3°C Local(Max), ±5°C Remote(Max)
Operating Temperature: 0°C ~ 100°C
Voltage - Supply: 3V ~ 5.5V
Sensor Type: Internal and External
Sensing Temperature: 0°C ~ 100°C, External Sensor
Topology: ADC, Comparator, Multiplexer, Register Bank
Output Alarm: Yes
Output Fan: No
Supplier Device Package: 16-QSOP
Part Status: Active
на замовлення 1430 шт:
термін постачання 21-31 дні (днів)
| Кількість | Ціна без ПДВ |
|---|---|
| 1+ | 413.03 грн |
| 10+ | 305.20 грн |
| 25+ | 282.13 грн |
| 100+ | 241.01 грн |
| 250+ | 229.68 грн |
| 500+ | 222.85 грн |
| 1000+ | 213.67 грн |
| ADT7462ACPZ-REEL |
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Виробник: onsemi
Description: IC TEMP/VOLT MONITOR 32-LFCSP
Packaging: Cut Tape (CT)
Package / Case: 32-VFQFN Exposed Pad, CSP
Output Type: SMBus
Mounting Type: Surface Mount
Function: Fan Control, Temp Monitor
Accuracy: ±4°C(Max)
Operating Temperature: -40°C ~ 125°C
Voltage - Supply: 3V ~ 5.5V
Sensor Type: Internal and External
Sensing Temperature: -40°C ~ 125°C, External Sensor
Topology: ADC, Comparator, Multiplexer, Register Bank
Output Alarm: Yes
Output Fan: Yes
Supplier Device Package: 32-LFCSP-VQ (5x5)
Description: IC TEMP/VOLT MONITOR 32-LFCSP
Packaging: Cut Tape (CT)
Package / Case: 32-VFQFN Exposed Pad, CSP
Output Type: SMBus
Mounting Type: Surface Mount
Function: Fan Control, Temp Monitor
Accuracy: ±4°C(Max)
Operating Temperature: -40°C ~ 125°C
Voltage - Supply: 3V ~ 5.5V
Sensor Type: Internal and External
Sensing Temperature: -40°C ~ 125°C, External Sensor
Topology: ADC, Comparator, Multiplexer, Register Bank
Output Alarm: Yes
Output Fan: Yes
Supplier Device Package: 32-LFCSP-VQ (5x5)
на замовлення 1878 шт:
термін постачання 21-31 дні (днів)
| Кількість | Ціна без ПДВ |
|---|---|
| 1+ | 597.45 грн |
| 10+ | 447.50 грн |
| 25+ | 415.52 грн |
| 100+ | 356.96 грн |
| 250+ | 341.24 грн |
| 500+ | 331.76 грн |
| 1000+ | 318.65 грн |
| NB6N14SMNR2G |
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Виробник: onsemi
Description: IC CLK BUFFER 1:4 2GHZ 16QFN
Frequency - Max: 2 GHz
Supplier Device Package: 16-QFN (3x3)
Differential - Input:Output: Yes/Yes
Ratio - Input:Output: 1:4
Voltage - Supply: 3V ~ 3.6V
Operating Temperature: -40°C ~ 85°C
Input: CML, LVDS, LVPECL
Type: Fanout Buffer (Distribution), Translator
Output: LVDS
Mounting Type: Surface Mount
Number of Circuits: 1
Package / Case: 16-VFQFN Exposed Pad
Packaging: Cut Tape (CT)
Description: IC CLK BUFFER 1:4 2GHZ 16QFN
Frequency - Max: 2 GHz
Supplier Device Package: 16-QFN (3x3)
Differential - Input:Output: Yes/Yes
Ratio - Input:Output: 1:4
Voltage - Supply: 3V ~ 3.6V
Operating Temperature: -40°C ~ 85°C
Input: CML, LVDS, LVPECL
Type: Fanout Buffer (Distribution), Translator
Output: LVDS
Mounting Type: Surface Mount
Number of Circuits: 1
Package / Case: 16-VFQFN Exposed Pad
Packaging: Cut Tape (CT)
на замовлення 1434 шт:
термін постачання 21-31 дні (днів)
| Кількість | Ціна без ПДВ |
|---|---|
| 1+ | 943.06 грн |
| 10+ | 716.36 грн |
| 25+ | 668.54 грн |
| 100+ | 578.11 грн |
| 250+ | 554.61 грн |
| 500+ | 540.45 грн |
| 1000+ | 520.13 грн |
| FEBSPM3SPM45-M01MTCA-GEVB |
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Виробник: onsemi
Description: EVAL BOARD FOR FNB41560
Part Status: Obsolete
Embedded: No
Primary Attributes: Motors (BLAC, BLDC, PMSM)
Supplied Contents: Board(s)
Utilized IC / Part: FNB41560
Type: Power Management
Function: Motor Controller/Driver
Packaging: Box
Secondary Attributes: Short-Circuit Protection
Contents: Board(s)
Description: EVAL BOARD FOR FNB41560
Part Status: Obsolete
Embedded: No
Primary Attributes: Motors (BLAC, BLDC, PMSM)
Supplied Contents: Board(s)
Utilized IC / Part: FNB41560
Type: Power Management
Function: Motor Controller/Driver
Packaging: Box
Secondary Attributes: Short-Circuit Protection
Contents: Board(s)
товару немає в наявності
В кошику
од. на суму грн.
| FAN7390AMX1 |
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Виробник: onsemi
Description: IC GATE DRVR HALF-BRIDGE 14SOP
Driven Configuration: Half-Bridge
Channel Type: Independent
Rise / Fall Time (Typ): 25ns, 20ns
Supplier Device Package: 14-SOIC
High Side Voltage - Max (Bootstrap): 600 V
Input Type: Non-Inverting
Voltage - Supply: 10V ~ 20V
Operating Temperature: -40°C ~ 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: 14-SOIC (0.154", 3.90mm Width)
Packaging: Cut Tape (CT)
DigiKey Programmable: Not Verified
Part Status: Last Time Buy
Current - Peak Output (Source, Sink): 4.5A, 4.5A
Logic Voltage - VIL, VIH: 1.2V, 2.5V
Gate Type: IGBT, N-Channel MOSFET
Number of Drivers: 2
Description: IC GATE DRVR HALF-BRIDGE 14SOP
Driven Configuration: Half-Bridge
Channel Type: Independent
Rise / Fall Time (Typ): 25ns, 20ns
Supplier Device Package: 14-SOIC
High Side Voltage - Max (Bootstrap): 600 V
Input Type: Non-Inverting
Voltage - Supply: 10V ~ 20V
Operating Temperature: -40°C ~ 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: 14-SOIC (0.154", 3.90mm Width)
Packaging: Cut Tape (CT)
DigiKey Programmable: Not Verified
Part Status: Last Time Buy
Current - Peak Output (Source, Sink): 4.5A, 4.5A
Logic Voltage - VIL, VIH: 1.2V, 2.5V
Gate Type: IGBT, N-Channel MOSFET
Number of Drivers: 2
на замовлення 1532 шт:
термін постачання 21-31 дні (днів)
| Кількість | Ціна без ПДВ |
|---|---|
| 2+ | 203.80 грн |
| 10+ | 176.55 грн |
| 25+ | 166.55 грн |
| 100+ | 125.03 грн |
| 250+ | 109.40 грн |
| 500+ | 106.27 грн |
| 1000+ | 83.01 грн |
| FDB38N30U |
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Виробник: onsemi
Description: MOSFET N CH 300V 38A D2PAK
Packaging: Cut Tape (CT)
Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 38A (Tc)
Rds On (Max) @ Id, Vgs: 120mOhm @ 19A, 10V
Power Dissipation (Max): 313W (Tc)
Vgs(th) (Max) @ Id: 5V @ 250µA
Supplier Device Package: TO-263 (D2Pak)
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±30V
Drain to Source Voltage (Vdss): 300 V
Gate Charge (Qg) (Max) @ Vgs: 73 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 3340 pF @ 25 V
Description: MOSFET N CH 300V 38A D2PAK
Packaging: Cut Tape (CT)
Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 38A (Tc)
Rds On (Max) @ Id, Vgs: 120mOhm @ 19A, 10V
Power Dissipation (Max): 313W (Tc)
Vgs(th) (Max) @ Id: 5V @ 250µA
Supplier Device Package: TO-263 (D2Pak)
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±30V
Drain to Source Voltage (Vdss): 300 V
Gate Charge (Qg) (Max) @ Vgs: 73 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 3340 pF @ 25 V
на замовлення 3607 шт:
термін постачання 21-31 дні (днів)
| Кількість | Ціна без ПДВ |
|---|---|
| 1+ | 321.59 грн |
| 10+ | 204.24 грн |
| 100+ | 144.46 грн |
| FOD8318R2 |
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Виробник: onsemi
Description: OPTOISO 4.243KV 1CH GT DVR 16SO
Voltage - Output Supply: 15V ~ 30V
Number of Channels: 1
Pulse Width Distortion (Max): 300ns
Propagation Delay tpLH / tpHL (Max): 500ns, 500ns
Common Mode Transient Immunity (Min): 35kV/µs
Rise / Fall Time (Typ): 34ns, 34ns
Supplier Device Package: 16-SO
Approval Agency: UL
Voltage - Isolation: 4243Vrms
Current - Output High, Low: 2.5A, 2.5A
Technology: Optical Coupling
Current - Peak Output: 3A
Operating Temperature: -40°C ~ 100°C
Mounting Type: Surface Mount
Package / Case: 16-SOIC (0.295", 7.50mm Width)
Packaging: Cut Tape (CT)
Description: OPTOISO 4.243KV 1CH GT DVR 16SO
Voltage - Output Supply: 15V ~ 30V
Number of Channels: 1
Pulse Width Distortion (Max): 300ns
Propagation Delay tpLH / tpHL (Max): 500ns, 500ns
Common Mode Transient Immunity (Min): 35kV/µs
Rise / Fall Time (Typ): 34ns, 34ns
Supplier Device Package: 16-SO
Approval Agency: UL
Voltage - Isolation: 4243Vrms
Current - Output High, Low: 2.5A, 2.5A
Technology: Optical Coupling
Current - Peak Output: 3A
Operating Temperature: -40°C ~ 100°C
Mounting Type: Surface Mount
Package / Case: 16-SOIC (0.295", 7.50mm Width)
Packaging: Cut Tape (CT)
товару немає в наявності
В кошику
од. на суму грн.
| FDMC86248 |
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Виробник: onsemi
Description: MOSFET N CH 150V 3.4A POWER33
Vgs(th) (Max) @ Id: 4V @ 250mA
Power Dissipation (Max): 2.3W (Ta), 36W (Tc)
Rds On (Max) @ Id, Vgs: 90mOhm @ 3.4A, 10V
Current - Continuous Drain (Id) @ 25°C: 3.4A (Ta)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: 8-PowerTDFN
Packaging: Cut Tape (CT)
Input Capacitance (Ciss) (Max) @ Vds: 525 pF @ 75 V
Gate Charge (Qg) (Max) @ Vgs: 9 nC @ 10 V
Drain to Source Voltage (Vdss): 150 V
Vgs (Max): ±20V
Drive Voltage (Max Rds On, Min Rds On): 6V, 10V
Supplier Device Package: Power33
Description: MOSFET N CH 150V 3.4A POWER33
Vgs(th) (Max) @ Id: 4V @ 250mA
Power Dissipation (Max): 2.3W (Ta), 36W (Tc)
Rds On (Max) @ Id, Vgs: 90mOhm @ 3.4A, 10V
Current - Continuous Drain (Id) @ 25°C: 3.4A (Ta)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: 8-PowerTDFN
Packaging: Cut Tape (CT)
Input Capacitance (Ciss) (Max) @ Vds: 525 pF @ 75 V
Gate Charge (Qg) (Max) @ Vgs: 9 nC @ 10 V
Drain to Source Voltage (Vdss): 150 V
Vgs (Max): ±20V
Drive Voltage (Max Rds On, Min Rds On): 6V, 10V
Supplier Device Package: Power33
на замовлення 13540 шт:
термін постачання 21-31 дні (днів)
| Кількість | Ціна без ПДВ |
|---|---|
| 3+ | 135.61 грн |
| 10+ | 100.14 грн |
| 100+ | 78.37 грн |
| 500+ | 62.58 грн |
| 1000+ | 57.88 грн |
| FDMC7208S |
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Виробник: onsemi
Description: MOSFET 2N-CH 30V 12A/16A 8PWR33
Supplier Device Package: 8-Power33 (3x3)
Vgs(th) (Max) @ Id: 3V @ 250µA
FET Feature: Logic Level Gate
Gate Charge (Qg) (Max) @ Vgs: 18nC @ 10V
Rds On (Max) @ Id, Vgs: 9mOhm @ 12A, 10V
Input Capacitance (Ciss) (Max) @ Vds: 1130pF @ 15V
Current - Continuous Drain (Id) @ 25°C: 12A, 16A
Drain to Source Voltage (Vdss): 30V
Power - Max: 800mW
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 150°C (TJ)
Configuration: 2 N-Channel (Dual)
Mounting Type: Surface Mount
Package / Case: 8-PowerWDFN
Packaging: Cut Tape (CT)
Description: MOSFET 2N-CH 30V 12A/16A 8PWR33
Supplier Device Package: 8-Power33 (3x3)
Vgs(th) (Max) @ Id: 3V @ 250µA
FET Feature: Logic Level Gate
Gate Charge (Qg) (Max) @ Vgs: 18nC @ 10V
Rds On (Max) @ Id, Vgs: 9mOhm @ 12A, 10V
Input Capacitance (Ciss) (Max) @ Vds: 1130pF @ 15V
Current - Continuous Drain (Id) @ 25°C: 12A, 16A
Drain to Source Voltage (Vdss): 30V
Power - Max: 800mW
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 150°C (TJ)
Configuration: 2 N-Channel (Dual)
Mounting Type: Surface Mount
Package / Case: 8-PowerWDFN
Packaging: Cut Tape (CT)
на замовлення 4145 шт:
термін постачання 21-31 дні (днів)
| Кількість | Ціна без ПДВ |
|---|---|
| 2+ | 186.75 грн |
| 10+ | 115.89 грн |
| 100+ | 79.28 грн |
| 500+ | 59.71 грн |
| 1000+ | 54.98 грн |
| FDMS8820 |
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Виробник: onsemi
Description: MOSFET N-CH 30V 28A/116A 8PQFN
Input Capacitance (Ciss) (Max) @ Vds: 5315 pF @ 15 V
Gate Charge (Qg) (Max) @ Vgs: 88 nC @ 10 V
Drain to Source Voltage (Vdss): 30 V
Vgs (Max): ±20V
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Part Status: Active
Supplier Device Package: 8-PQFN (5x6)
Vgs(th) (Max) @ Id: 2.5V @ 250µA
Power Dissipation (Max): 2.5W (Ta), 78W (Tc)
Rds On (Max) @ Id, Vgs: 2mOhm @ 28A, 10V
Current - Continuous Drain (Id) @ 25°C: 28A (Ta), 116A (Tc)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: 8-PowerTDFN
Packaging: Cut Tape (CT)
Description: MOSFET N-CH 30V 28A/116A 8PQFN
Input Capacitance (Ciss) (Max) @ Vds: 5315 pF @ 15 V
Gate Charge (Qg) (Max) @ Vgs: 88 nC @ 10 V
Drain to Source Voltage (Vdss): 30 V
Vgs (Max): ±20V
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Part Status: Active
Supplier Device Package: 8-PQFN (5x6)
Vgs(th) (Max) @ Id: 2.5V @ 250µA
Power Dissipation (Max): 2.5W (Ta), 78W (Tc)
Rds On (Max) @ Id, Vgs: 2mOhm @ 28A, 10V
Current - Continuous Drain (Id) @ 25°C: 28A (Ta), 116A (Tc)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: 8-PowerTDFN
Packaging: Cut Tape (CT)
на замовлення 21741 шт:
термін постачання 21-31 дні (днів)
| Кількість | Ціна без ПДВ |
|---|---|
| 3+ | 125.54 грн |
| 10+ | 76.64 грн |
| 100+ | 51.52 грн |
| 500+ | 38.25 грн |
| 1000+ | 34.99 грн |
| FXMHD103UMX |
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Виробник: onsemi
Description: IC INTERFACE SPECIALIZED 12UMLP
Supplier Device Package: 12-UMLP (1.8x1.8)
Applications: Cell Phones, Digital Cameras, Media Players
Voltage - Supply: 1.6V ~ 3.6V
Mounting Type: Surface Mount
Package / Case: 12-UFQFN
Packaging: Cut Tape (CT)
Description: IC INTERFACE SPECIALIZED 12UMLP
Supplier Device Package: 12-UMLP (1.8x1.8)
Applications: Cell Phones, Digital Cameras, Media Players
Voltage - Supply: 1.6V ~ 3.6V
Mounting Type: Surface Mount
Package / Case: 12-UFQFN
Packaging: Cut Tape (CT)
товару немає в наявності
В кошику
од. на суму грн.
| FXL6408UMX |
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Виробник: onsemi
Description: IC XPNDR 400KHZ I2C 16UMLP
Packaging: Cut Tape (CT)
Features: POR
Package / Case: 16-UFQFN
Output Type: Open Drain
Mounting Type: Surface Mount
Interface: I2C
Number of I/O: 8
Operating Temperature: -40°C ~ 85°C
Voltage - Supply: 1.65V ~ 4V
Clock Frequency: 400 kHz
Interrupt Output: Yes
Supplier Device Package: 16-UMLP (1.8x2.6)
Current - Output Source/Sink: 6mA
Part Status: Active
DigiKey Programmable: Not Verified
Description: IC XPNDR 400KHZ I2C 16UMLP
Packaging: Cut Tape (CT)
Features: POR
Package / Case: 16-UFQFN
Output Type: Open Drain
Mounting Type: Surface Mount
Interface: I2C
Number of I/O: 8
Operating Temperature: -40°C ~ 85°C
Voltage - Supply: 1.65V ~ 4V
Clock Frequency: 400 kHz
Interrupt Output: Yes
Supplier Device Package: 16-UMLP (1.8x2.6)
Current - Output Source/Sink: 6mA
Part Status: Active
DigiKey Programmable: Not Verified
на замовлення 62840 шт:
термін постачання 21-31 дні (днів)
| Кількість | Ціна без ПДВ |
|---|---|
| 9+ | 35.65 грн |
| 13+ | 24.33 грн |
| 25+ | 21.73 грн |
| 100+ | 17.77 грн |
| 250+ | 16.51 грн |
| 500+ | 15.75 грн |
| 1000+ | 14.88 грн |
| 2500+ | 14.23 грн |
| FDMS86101A |
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Виробник: onsemi
Description: MOSFET N-CH 100V 13A/60A 8PQFN
Packaging: Cut Tape (CT)
Package / Case: 8-PowerTDFN
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 13A (Ta), 60A (Tc)
Rds On (Max) @ Id, Vgs: 8mOhm @ 13A, 10V
Power Dissipation (Max): 2.5W (Ta), 104W (Tc)
Vgs(th) (Max) @ Id: 4V @ 250µA
Supplier Device Package: 8-PQFN (5x6)
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 6V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 100 V
Gate Charge (Qg) (Max) @ Vgs: 58 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 4120 pF @ 50 V
Description: MOSFET N-CH 100V 13A/60A 8PQFN
Packaging: Cut Tape (CT)
Package / Case: 8-PowerTDFN
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 13A (Ta), 60A (Tc)
Rds On (Max) @ Id, Vgs: 8mOhm @ 13A, 10V
Power Dissipation (Max): 2.5W (Ta), 104W (Tc)
Vgs(th) (Max) @ Id: 4V @ 250µA
Supplier Device Package: 8-PQFN (5x6)
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 6V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 100 V
Gate Charge (Qg) (Max) @ Vgs: 58 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 4120 pF @ 50 V
на замовлення 1169 шт:
термін постачання 21-31 дні (днів)
| Кількість | Ціна без ПДВ |
|---|---|
| 2+ | 304.54 грн |
| 10+ | 193.49 грн |
| 100+ | 136.54 грн |
| 500+ | 109.29 грн |
| FAN53600AUC33X |
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Виробник: onsemi
Description: IC REG BUCK 3.3V 600MA 6WLCSP
Part Status: Last Time Buy
Voltage - Output (Min/Fixed): 3.3V
Voltage - Input (Min): 2.3V
Synchronous Rectifier: Yes
Supplier Device Package: 6-WLCSP (1.23x0.88)
Topology: Buck
Voltage - Input (Max): 5.5V
Frequency - Switching: 3MHz
Output Configuration: Positive
Operating Temperature: -40°C ~ 85°C (TA)
Current - Output: 600mA
Function: Step-Down
Number of Outputs: 1
Mounting Type: Surface Mount
Output Type: Fixed
Package / Case: 6-UFBGA, WLCSP
Packaging: Cut Tape (CT)
Description: IC REG BUCK 3.3V 600MA 6WLCSP
Part Status: Last Time Buy
Voltage - Output (Min/Fixed): 3.3V
Voltage - Input (Min): 2.3V
Synchronous Rectifier: Yes
Supplier Device Package: 6-WLCSP (1.23x0.88)
Topology: Buck
Voltage - Input (Max): 5.5V
Frequency - Switching: 3MHz
Output Configuration: Positive
Operating Temperature: -40°C ~ 85°C (TA)
Current - Output: 600mA
Function: Step-Down
Number of Outputs: 1
Mounting Type: Surface Mount
Output Type: Fixed
Package / Case: 6-UFBGA, WLCSP
Packaging: Cut Tape (CT)
на замовлення 6200 шт:
термін постачання 21-31 дні (днів)
| Кількість | Ціна без ПДВ |
|---|---|
| 3+ | 122.44 грн |
| 10+ | 72.90 грн |
| 25+ | 61.01 грн |
| 100+ | 44.72 грн |
| 250+ | 38.55 грн |
| 500+ | 34.75 грн |
| 1000+ | 31.06 грн |
| FAN3227TMX-F085 |
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Виробник: onsemi
Description: IC GATE DRVR LOW-SIDE 8SOIC
DigiKey Programmable: Not Verified
Qualification: AEC-Q100
Grade: Automotive
Logic Voltage - VIL, VIH: 0.8V, 2V
Gate Type: MOSFET (N-Channel)
Number of Drivers: 2
Driven Configuration: Low-Side
Channel Type: Independent
Rise / Fall Time (Typ): 12ns, 9ns
Supplier Device Package: 8-SOIC
Input Type: Non-Inverting
Voltage - Supply: 4.5V ~ 18V
Operating Temperature: -40°C ~ 125°C (TA)
Mounting Type: Surface Mount
Package / Case: 8-SOIC (0.154", 3.90mm Width)
Packaging: Cut Tape (CT)
Part Status: Active
Current - Peak Output (Source, Sink): 3A, 3A
Description: IC GATE DRVR LOW-SIDE 8SOIC
DigiKey Programmable: Not Verified
Qualification: AEC-Q100
Grade: Automotive
Logic Voltage - VIL, VIH: 0.8V, 2V
Gate Type: MOSFET (N-Channel)
Number of Drivers: 2
Driven Configuration: Low-Side
Channel Type: Independent
Rise / Fall Time (Typ): 12ns, 9ns
Supplier Device Package: 8-SOIC
Input Type: Non-Inverting
Voltage - Supply: 4.5V ~ 18V
Operating Temperature: -40°C ~ 125°C (TA)
Mounting Type: Surface Mount
Package / Case: 8-SOIC (0.154", 3.90mm Width)
Packaging: Cut Tape (CT)
Part Status: Active
Current - Peak Output (Source, Sink): 3A, 3A
на замовлення 12320 шт:
термін постачання 21-31 дні (днів)
| Кількість | Ціна без ПДВ |
|---|---|
| 2+ | 165.06 грн |
| 10+ | 99.77 грн |
| 25+ | 84.35 грн |
| 100+ | 62.77 грн |
| 250+ | 54.71 грн |
| 500+ | 49.76 грн |
| 1000+ | 44.87 грн |
| FDMC86260 |
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Виробник: onsemi
Description: MOSFET N CH 150V 5.4A POWER 33
Packaging: Cut Tape (CT)
Package / Case: 8-PowerWDFN
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 5.4A (Ta), 16A (Tc)
Rds On (Max) @ Id, Vgs: 34mOhm @ 5.4A, 10V
Power Dissipation (Max): 2.3W (Ta), 54W (Tc)
Vgs(th) (Max) @ Id: 4V @ 250µA
Supplier Device Package: Power33
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 6V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 150 V
Gate Charge (Qg) (Max) @ Vgs: 21 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 1330 pF @ 75 V
Description: MOSFET N CH 150V 5.4A POWER 33
Packaging: Cut Tape (CT)
Package / Case: 8-PowerWDFN
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 5.4A (Ta), 16A (Tc)
Rds On (Max) @ Id, Vgs: 34mOhm @ 5.4A, 10V
Power Dissipation (Max): 2.3W (Ta), 54W (Tc)
Vgs(th) (Max) @ Id: 4V @ 250µA
Supplier Device Package: Power33
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 6V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 150 V
Gate Charge (Qg) (Max) @ Vgs: 21 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 1330 pF @ 75 V
на замовлення 1527 шт:
термін постачання 21-31 дні (днів)
| Кількість | Ціна без ПДВ |
|---|---|
| 2+ | 239.45 грн |
| 10+ | 150.51 грн |
| 100+ | 104.75 грн |
| 500+ | 79.97 грн |
| 1000+ | 79.17 грн |
| FOD8160R2 |
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Виробник: onsemi
Description: OPTOISO 5KV OPEN COLLECTOR 5SOP
Current - Output / Channel: 50 mA
Number of Channels: 1
Propagation Delay tpLH / tpHL (Max): 90ns, 80ns
Common Mode Transient Immunity (Min): 20kV/µs
Rise / Fall Time (Typ): 22ns, 9ns
Supplier Device Package: 5-SOP
Inputs - Side 1/Side 2: 1/0
Current - DC Forward (If) (Max): 25mA
Voltage - Isolation: 5000Vrms
Input Type: DC
Data Rate: 10Mbps
Voltage - Forward (Vf) (Typ): 1.45V
Voltage - Supply: 3V ~ 5.5V
Operating Temperature: -40°C ~ 100°C
Mounting Type: Surface Mount
Output Type: Open Collector, Schottky Clamped
Package / Case: 6-SOIC (0.362", 9.20mm Width), 5 Leads
Packaging: Cut Tape (CT)
Description: OPTOISO 5KV OPEN COLLECTOR 5SOP
Current - Output / Channel: 50 mA
Number of Channels: 1
Propagation Delay tpLH / tpHL (Max): 90ns, 80ns
Common Mode Transient Immunity (Min): 20kV/µs
Rise / Fall Time (Typ): 22ns, 9ns
Supplier Device Package: 5-SOP
Inputs - Side 1/Side 2: 1/0
Current - DC Forward (If) (Max): 25mA
Voltage - Isolation: 5000Vrms
Input Type: DC
Data Rate: 10Mbps
Voltage - Forward (Vf) (Typ): 1.45V
Voltage - Supply: 3V ~ 5.5V
Operating Temperature: -40°C ~ 100°C
Mounting Type: Surface Mount
Output Type: Open Collector, Schottky Clamped
Package / Case: 6-SOIC (0.362", 9.20mm Width), 5 Leads
Packaging: Cut Tape (CT)
на замовлення 1000 шт:
термін постачання 21-31 дні (днів)
| Кількість | Ціна без ПДВ |
|---|---|
| 1+ | 312.29 грн |
| 10+ | 204.98 грн |
| 100+ | 156.08 грн |
| 500+ | 128.34 грн |
| 6N137SDVM |
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Виробник: onsemi
Description: OPTOISOLTR 5KV OPEN COLL 8-SMD
Packaging: Cut Tape (CT)
Package / Case: 8-SMD, Gull Wing
Output Type: Open Collector
Mounting Type: Surface Mount
Operating Temperature: -40°C ~ 100°C
Voltage - Supply: 4.5V ~ 5.5V
Voltage - Forward (Vf) (Typ): 1.45V
Data Rate: 10Mbps
Input Type: DC
Voltage - Isolation: 5000Vrms
Current - DC Forward (If) (Max): 50mA
Inputs - Side 1/Side 2: 1/0
Supplier Device Package: 8-SMD
Rise / Fall Time (Typ): 30ns, 10ns
Common Mode Transient Immunity (Min): 10kV/µs (Typ)
Propagation Delay tpLH / tpHL (Max): 75ns, 75ns
Part Status: Active
Number of Channels: 1
Current - Output / Channel: 50 mA
Description: OPTOISOLTR 5KV OPEN COLL 8-SMD
Packaging: Cut Tape (CT)
Package / Case: 8-SMD, Gull Wing
Output Type: Open Collector
Mounting Type: Surface Mount
Operating Temperature: -40°C ~ 100°C
Voltage - Supply: 4.5V ~ 5.5V
Voltage - Forward (Vf) (Typ): 1.45V
Data Rate: 10Mbps
Input Type: DC
Voltage - Isolation: 5000Vrms
Current - DC Forward (If) (Max): 50mA
Inputs - Side 1/Side 2: 1/0
Supplier Device Package: 8-SMD
Rise / Fall Time (Typ): 30ns, 10ns
Common Mode Transient Immunity (Min): 10kV/µs (Typ)
Propagation Delay tpLH / tpHL (Max): 75ns, 75ns
Part Status: Active
Number of Channels: 1
Current - Output / Channel: 50 mA
на замовлення 990 шт:
термін постачання 21-31 дні (днів)
| Кількість | Ціна без ПДВ |
|---|---|
| 3+ | 103.84 грн |
| 10+ | 71.11 грн |
| 100+ | 53.47 грн |
| 500+ | 42.85 грн |
| FDMB2308PZ |
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Виробник: onsemi
Description: MOSFET 2P-CH 6MLP
Packaging: Cut Tape (CT)
Package / Case: 6-WDFN Exposed Pad
Mounting Type: Surface Mount
Configuration: 2 P-Channel (Dual) Common Drain
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
Power - Max: 800mW
Input Capacitance (Ciss) (Max) @ Vds: 3030pF @ 10V
Rds On (Max) @ Id, Vgs: 36mOhm @ 5.7A, 4.5V
Gate Charge (Qg) (Max) @ Vgs: 30nC @ 10V
FET Feature: Logic Level Gate
Vgs(th) (Max) @ Id: 1.5V @ 250µA
Supplier Device Package: 6-MLP (2x3)
Part Status: Active
Description: MOSFET 2P-CH 6MLP
Packaging: Cut Tape (CT)
Package / Case: 6-WDFN Exposed Pad
Mounting Type: Surface Mount
Configuration: 2 P-Channel (Dual) Common Drain
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
Power - Max: 800mW
Input Capacitance (Ciss) (Max) @ Vds: 3030pF @ 10V
Rds On (Max) @ Id, Vgs: 36mOhm @ 5.7A, 4.5V
Gate Charge (Qg) (Max) @ Vgs: 30nC @ 10V
FET Feature: Logic Level Gate
Vgs(th) (Max) @ Id: 1.5V @ 250µA
Supplier Device Package: 6-MLP (2x3)
Part Status: Active
на замовлення 2944 шт:
термін постачання 21-31 дні (днів)
| Кількість | Ціна без ПДВ |
|---|---|
| 2+ | 185.20 грн |
| 10+ | 115.36 грн |
| 100+ | 79.45 грн |
| 500+ | 61.23 грн |
| FDMS86152 |
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Виробник: onsemi
Description: MOSFET N-CH 100V 14A/45A POWER56
Vgs (Max): ±20V
Drive Voltage (Max Rds On, Min Rds On): 6V, 10V
Part Status: Active
Supplier Device Package: 8-PQFN (5x6)
Vgs(th) (Max) @ Id: 4V @ 250µA
Power Dissipation (Max): 2.7W (Ta), 125W (Tc)
Rds On (Max) @ Id, Vgs: 6mOhm @ 14A, 10V
Current - Continuous Drain (Id) @ 25°C: 14A (Ta), 45A (Tc)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: 8-PowerTDFN
Packaging: Cut Tape (CT)
Input Capacitance (Ciss) (Max) @ Vds: 3370 pF @ 50 V
Gate Charge (Qg) (Max) @ Vgs: 50 nC @ 10 V
Drain to Source Voltage (Vdss): 100 V
Description: MOSFET N-CH 100V 14A/45A POWER56
Vgs (Max): ±20V
Drive Voltage (Max Rds On, Min Rds On): 6V, 10V
Part Status: Active
Supplier Device Package: 8-PQFN (5x6)
Vgs(th) (Max) @ Id: 4V @ 250µA
Power Dissipation (Max): 2.7W (Ta), 125W (Tc)
Rds On (Max) @ Id, Vgs: 6mOhm @ 14A, 10V
Current - Continuous Drain (Id) @ 25°C: 14A (Ta), 45A (Tc)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: 8-PowerTDFN
Packaging: Cut Tape (CT)
Input Capacitance (Ciss) (Max) @ Vds: 3370 pF @ 50 V
Gate Charge (Qg) (Max) @ Vgs: 50 nC @ 10 V
Drain to Source Voltage (Vdss): 100 V
на замовлення 13963 шт:
термін постачання 21-31 дні (днів)
| Кількість | Ціна без ПДВ |
|---|---|
| 1+ | 395.20 грн |
| 10+ | 254.46 грн |
| 100+ | 183.14 грн |
| 500+ | 169.17 грн |
| FODM8801CR2 |
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Виробник: onsemi
Description: OPTOISO 3.75KV TRANS 4-MINI-FLAT
Packaging: Cut Tape (CT)
Package / Case: 4-SOIC (0.173", 4.40mm Width)
Output Type: Transistor
Mounting Type: Surface Mount
Operating Temperature: -40°C ~ 125°C
Voltage - Forward (Vf) (Typ): 1.35V
Input Type: DC
Current - Output / Channel: 30mA
Voltage - Isolation: 3750Vrms
Current Transfer Ratio (Min): 200% @ 1mA
Vce Saturation (Max): 400mV
Current Transfer Ratio (Max): 400% @ 1mA
Supplier Device Package: 4-Mini-Flat
Voltage - Output (Max): 75V
Turn On / Turn Off Time (Typ): 6µs, 6µs
Rise / Fall Time (Typ): 5µs, 5.5µs
Number of Channels: 1
Current - DC Forward (If) (Max): 20 mA
Description: OPTOISO 3.75KV TRANS 4-MINI-FLAT
Packaging: Cut Tape (CT)
Package / Case: 4-SOIC (0.173", 4.40mm Width)
Output Type: Transistor
Mounting Type: Surface Mount
Operating Temperature: -40°C ~ 125°C
Voltage - Forward (Vf) (Typ): 1.35V
Input Type: DC
Current - Output / Channel: 30mA
Voltage - Isolation: 3750Vrms
Current Transfer Ratio (Min): 200% @ 1mA
Vce Saturation (Max): 400mV
Current Transfer Ratio (Max): 400% @ 1mA
Supplier Device Package: 4-Mini-Flat
Voltage - Output (Max): 75V
Turn On / Turn Off Time (Typ): 6µs, 6µs
Rise / Fall Time (Typ): 5µs, 5.5µs
Number of Channels: 1
Current - DC Forward (If) (Max): 20 mA
на замовлення 1067 шт:
термін постачання 21-31 дні (днів)
| Кількість | Ціна без ПДВ |
|---|---|
| 3+ | 107.71 грн |
| 10+ | 73.43 грн |
| 100+ | 55.44 грн |
| 500+ | 44.56 грн |
| 1000+ | 42.13 грн |
| FDB390N15A |
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Виробник: onsemi
Description: MOSFET N-CH 150V 27A D2PAK
Input Capacitance (Ciss) (Max) @ Vds: 1285 pF @ 75 V
Gate Charge (Qg) (Max) @ Vgs: 18.6 nC @ 10 V
Drain to Source Voltage (Vdss): 150 V
Vgs (Max): ±20V
Rds On (Max) @ Id, Vgs: 39mOhm @ 27A, 10V
Current - Continuous Drain (Id) @ 25°C: 27A (Tc)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 175°C (TJ)
Mounting Type: Surface Mount
Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
Packaging: Cut Tape (CT)
Drive Voltage (Max Rds On, Min Rds On): 10V
Part Status: Active
Supplier Device Package: TO-263 (D2Pak)
Vgs(th) (Max) @ Id: 4V @ 250µA
Power Dissipation (Max): 75W (Tc)
Description: MOSFET N-CH 150V 27A D2PAK
Input Capacitance (Ciss) (Max) @ Vds: 1285 pF @ 75 V
Gate Charge (Qg) (Max) @ Vgs: 18.6 nC @ 10 V
Drain to Source Voltage (Vdss): 150 V
Vgs (Max): ±20V
Rds On (Max) @ Id, Vgs: 39mOhm @ 27A, 10V
Current - Continuous Drain (Id) @ 25°C: 27A (Tc)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 175°C (TJ)
Mounting Type: Surface Mount
Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
Packaging: Cut Tape (CT)
Drive Voltage (Max Rds On, Min Rds On): 10V
Part Status: Active
Supplier Device Package: TO-263 (D2Pak)
Vgs(th) (Max) @ Id: 4V @ 250µA
Power Dissipation (Max): 75W (Tc)
на замовлення 1818 шт:
термін постачання 21-31 дні (днів)
| Кількість | Ціна без ПДВ |
|---|---|
| 2+ | 216.97 грн |
| 10+ | 135.81 грн |
| 100+ | 93.86 грн |
| FDMS3606AS |
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Виробник: onsemi
Description: MOSFET 2N-CH 30V 13A/27A POWER56
Current - Continuous Drain (Id) @ 25°C: 13A, 27A
Drain to Source Voltage (Vdss): 30V
Power - Max: 1W
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 150°C (TJ)
Configuration: 2 N-Channel (Dual) Asymmetrical
Mounting Type: Surface Mount
Package / Case: 8-PowerTDFN
Packaging: Cut Tape (CT)
Supplier Device Package: Power56
Vgs(th) (Max) @ Id: 2.7V @ 250µA
FET Feature: Logic Level Gate
Gate Charge (Qg) (Max) @ Vgs: 29nC @ 10V
Rds On (Max) @ Id, Vgs: 8mOhm @ 13A, 10V
Input Capacitance (Ciss) (Max) @ Vds: 1695pF @ 15V
Description: MOSFET 2N-CH 30V 13A/27A POWER56
Current - Continuous Drain (Id) @ 25°C: 13A, 27A
Drain to Source Voltage (Vdss): 30V
Power - Max: 1W
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 150°C (TJ)
Configuration: 2 N-Channel (Dual) Asymmetrical
Mounting Type: Surface Mount
Package / Case: 8-PowerTDFN
Packaging: Cut Tape (CT)
Supplier Device Package: Power56
Vgs(th) (Max) @ Id: 2.7V @ 250µA
FET Feature: Logic Level Gate
Gate Charge (Qg) (Max) @ Vgs: 29nC @ 10V
Rds On (Max) @ Id, Vgs: 8mOhm @ 13A, 10V
Input Capacitance (Ciss) (Max) @ Vds: 1695pF @ 15V
товару немає в наявності
В кошику
од. на суму грн.
| FSA2866UMX |
Виробник: onsemi
Description: IC ANALOG SWITCH 20UMLP
Number of Channels: 1
Multiplexer/Demultiplexer Circuit: 2:2
Voltage - Supply, Single (V+): 1.65V ~ 4.3V
-3db Bandwidth: 210MHz
On-State Resistance (Max): 3.5Ohm
Applications: Telecommunications
Operating Temperature: -40°C ~ 85°C (TA)
Mounting Type: Surface Mount
Package / Case: 20-UFQFN Exposed Pad
Features: Break-Before-Make
Packaging: Cut Tape (CT)
Supplier Device Package: 20-UMLP (3x3)
Description: IC ANALOG SWITCH 20UMLP
Number of Channels: 1
Multiplexer/Demultiplexer Circuit: 2:2
Voltage - Supply, Single (V+): 1.65V ~ 4.3V
-3db Bandwidth: 210MHz
On-State Resistance (Max): 3.5Ohm
Applications: Telecommunications
Operating Temperature: -40°C ~ 85°C (TA)
Mounting Type: Surface Mount
Package / Case: 20-UFQFN Exposed Pad
Features: Break-Before-Make
Packaging: Cut Tape (CT)
Supplier Device Package: 20-UMLP (3x3)
на замовлення 31 шт:
термін постачання 21-31 дні (днів)
| Кількість | Ціна без ПДВ |
|---|---|
| 5+ | 76.72 грн |
| 10+ | 66.41 грн |
| 25+ | 63.04 грн |
| FOD3182TSR2V |
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Виробник: onsemi
Description: OPTOISO 5KV 1CH GATE DVR 8SMD
Voltage - Output Supply: 10V ~ 30V
Current - DC Forward (If) (Max): 25 mA
Number of Channels: 1
Part Status: Active
Pulse Width Distortion (Max): 65ns
Propagation Delay tpLH / tpHL (Max): 210ns, 210ns
Common Mode Transient Immunity (Min): 35kV/µs
Rise / Fall Time (Typ): 38ns, 24ns
Supplier Device Package: 8-SMD
Approval Agency: UL, VDE
Voltage - Isolation: 5000Vrms
Current - Output High, Low: 2.5A, 2.5A
Technology: Optical Coupling
Current - Peak Output: 3A
Voltage - Forward (Vf) (Typ): 1.43V
Operating Temperature: -40°C ~ 100°C
Mounting Type: Surface Mount
Package / Case: 8-SMD, Gull Wing
Packaging: Cut Tape (CT)
Description: OPTOISO 5KV 1CH GATE DVR 8SMD
Voltage - Output Supply: 10V ~ 30V
Current - DC Forward (If) (Max): 25 mA
Number of Channels: 1
Part Status: Active
Pulse Width Distortion (Max): 65ns
Propagation Delay tpLH / tpHL (Max): 210ns, 210ns
Common Mode Transient Immunity (Min): 35kV/µs
Rise / Fall Time (Typ): 38ns, 24ns
Supplier Device Package: 8-SMD
Approval Agency: UL, VDE
Voltage - Isolation: 5000Vrms
Current - Output High, Low: 2.5A, 2.5A
Technology: Optical Coupling
Current - Peak Output: 3A
Voltage - Forward (Vf) (Typ): 1.43V
Operating Temperature: -40°C ~ 100°C
Mounting Type: Surface Mount
Package / Case: 8-SMD, Gull Wing
Packaging: Cut Tape (CT)
на замовлення 730 шт:
термін постачання 21-31 дні (днів)
| Кількість | Ціна без ПДВ |
|---|---|
| 2+ | 220.85 грн |
| 10+ | 155.43 грн |
| 100+ | 121.50 грн |
| FODM8801BR2 |
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Виробник: onsemi
Description: OPTOISO 3.75KV TRANS 4-MINI-FLAT
Mounting Type: Surface Mount
Output Type: Transistor
Package / Case: 4-SOIC (0.173", 4.40mm Width)
Packaging: Cut Tape (CT)
Current - DC Forward (If) (Max): 20 mA
Number of Channels: 1
Rise / Fall Time (Typ): 5µs, 5.5µs
Turn On / Turn Off Time (Typ): 6µs, 6µs
Voltage - Output (Max): 75V
Supplier Device Package: 4-Mini-Flat
Current Transfer Ratio (Max): 260% @ 1mA
Vce Saturation (Max): 400mV
Current Transfer Ratio (Min): 130% @ 1mA
Voltage - Isolation: 3750Vrms
Current - Output / Channel: 30mA
Input Type: DC
Voltage - Forward (Vf) (Typ): 1.35V
Operating Temperature: -40°C ~ 125°C
Description: OPTOISO 3.75KV TRANS 4-MINI-FLAT
Mounting Type: Surface Mount
Output Type: Transistor
Package / Case: 4-SOIC (0.173", 4.40mm Width)
Packaging: Cut Tape (CT)
Current - DC Forward (If) (Max): 20 mA
Number of Channels: 1
Rise / Fall Time (Typ): 5µs, 5.5µs
Turn On / Turn Off Time (Typ): 6µs, 6µs
Voltage - Output (Max): 75V
Supplier Device Package: 4-Mini-Flat
Current Transfer Ratio (Max): 260% @ 1mA
Vce Saturation (Max): 400mV
Current Transfer Ratio (Min): 130% @ 1mA
Voltage - Isolation: 3750Vrms
Current - Output / Channel: 30mA
Input Type: DC
Voltage - Forward (Vf) (Typ): 1.35V
Operating Temperature: -40°C ~ 125°C
на замовлення 1517086 шт:
термін постачання 21-31 дні (днів)
| Кількість | Ціна без ПДВ |
|---|---|
| 3+ | 104.61 грн |
| 10+ | 71.56 грн |
| 100+ | 53.97 грн |
| 500+ | 43.34 грн |
| 1000+ | 40.96 грн |
| FODM8801AR2 |
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Виробник: onsemi
Description: OPTOISO 3.75KV TRANS 4-MINI-FLAT
Packaging: Cut Tape (CT)
Current - DC Forward (If) (Max): 20 mA
Number of Channels: 1
Rise / Fall Time (Typ): 5µs, 5.5µs
Turn On / Turn Off Time (Typ): 6µs, 6µs
Voltage - Output (Max): 75V
Supplier Device Package: 4-Mini-Flat
Current Transfer Ratio (Max): 160% @ 1mA
Vce Saturation (Max): 400mV
Current Transfer Ratio (Min): 80% @ 1mA
Voltage - Isolation: 3750Vrms
Current - Output / Channel: 30mA
Input Type: DC
Voltage - Forward (Vf) (Typ): 1.35V
Operating Temperature: -40°C ~ 125°C
Mounting Type: Surface Mount
Output Type: Transistor
Package / Case: 4-SOIC (0.173", 4.40mm Width)
Description: OPTOISO 3.75KV TRANS 4-MINI-FLAT
Packaging: Cut Tape (CT)
Current - DC Forward (If) (Max): 20 mA
Number of Channels: 1
Rise / Fall Time (Typ): 5µs, 5.5µs
Turn On / Turn Off Time (Typ): 6µs, 6µs
Voltage - Output (Max): 75V
Supplier Device Package: 4-Mini-Flat
Current Transfer Ratio (Max): 160% @ 1mA
Vce Saturation (Max): 400mV
Current Transfer Ratio (Min): 80% @ 1mA
Voltage - Isolation: 3750Vrms
Current - Output / Channel: 30mA
Input Type: DC
Voltage - Forward (Vf) (Typ): 1.35V
Operating Temperature: -40°C ~ 125°C
Mounting Type: Surface Mount
Output Type: Transistor
Package / Case: 4-SOIC (0.173", 4.40mm Width)
на замовлення 131682 шт:
термін постачання 21-31 дні (днів)
| Кількість | Ціна без ПДВ |
|---|---|
| 3+ | 110.81 грн |
| 10+ | 75.96 грн |
| 100+ | 57.45 грн |
| 500+ | 46.24 грн |
| 1000+ | 43.73 грн |
| FXLP4555MPX |
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Виробник: onsemi
Description: IC XLTR VL BIDIR 16-MLP
Packaging: Cut Tape (CT)
Features: SIM Card Interface
Package / Case: 16-WFQFN Exposed Pad
Output Type: Tri-State, Non-Inverted
Mounting Type: Surface Mount
Operating Temperature: -40°C ~ 85°C (TA)
Supplier Device Package: 16-MLP (3x3)
Channel Type: Bidirectional
Translator Type: Voltage Level
Channels per Circuit: 1
Voltage - VCCA: 1.65 V ~ 5.5 V
Voltage - VCCB: 1.7 V ~ 3.2 V
Number of Circuits: 1
Description: IC XLTR VL BIDIR 16-MLP
Packaging: Cut Tape (CT)
Features: SIM Card Interface
Package / Case: 16-WFQFN Exposed Pad
Output Type: Tri-State, Non-Inverted
Mounting Type: Surface Mount
Operating Temperature: -40°C ~ 85°C (TA)
Supplier Device Package: 16-MLP (3x3)
Channel Type: Bidirectional
Translator Type: Voltage Level
Channels per Circuit: 1
Voltage - VCCA: 1.65 V ~ 5.5 V
Voltage - VCCB: 1.7 V ~ 3.2 V
Number of Circuits: 1
на замовлення 33664 шт:
термін постачання 21-31 дні (днів)
| Кількість | Ціна без ПДВ |
|---|---|
| 10+ | 33.32 грн |
| 14+ | 22.76 грн |
| 25+ | 20.36 грн |
| 100+ | 16.59 грн |
| 250+ | 15.40 грн |
| 500+ | 14.68 грн |
| 1000+ | 13.99 грн |
| FOD3182SD |
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Виробник: onsemi
Description: OPTOISO 5KV 1CH GATE DVR 8SMD
Voltage - Output Supply: 10V ~ 30V
Current - DC Forward (If) (Max): 25 mA
Number of Channels: 1
Part Status: Active
Pulse Width Distortion (Max): 65ns
Propagation Delay tpLH / tpHL (Max): 210ns, 210ns
Common Mode Transient Immunity (Min): 35kV/µs
Rise / Fall Time (Typ): 38ns, 24ns
Supplier Device Package: 8-SMD
Approval Agency: UL
Voltage - Isolation: 5000Vrms
Current - Output High, Low: 2.5A, 2.5A
Technology: Optical Coupling
Current - Peak Output: 3A
Voltage - Forward (Vf) (Typ): 1.43V
Operating Temperature: -40°C ~ 100°C
Mounting Type: Surface Mount
Package / Case: 8-SMD, Gull Wing
Packaging: Cut Tape (CT)
Description: OPTOISO 5KV 1CH GATE DVR 8SMD
Voltage - Output Supply: 10V ~ 30V
Current - DC Forward (If) (Max): 25 mA
Number of Channels: 1
Part Status: Active
Pulse Width Distortion (Max): 65ns
Propagation Delay tpLH / tpHL (Max): 210ns, 210ns
Common Mode Transient Immunity (Min): 35kV/µs
Rise / Fall Time (Typ): 38ns, 24ns
Supplier Device Package: 8-SMD
Approval Agency: UL
Voltage - Isolation: 5000Vrms
Current - Output High, Low: 2.5A, 2.5A
Technology: Optical Coupling
Current - Peak Output: 3A
Voltage - Forward (Vf) (Typ): 1.43V
Operating Temperature: -40°C ~ 100°C
Mounting Type: Surface Mount
Package / Case: 8-SMD, Gull Wing
Packaging: Cut Tape (CT)
на замовлення 15436 шт:
термін постачання 21-31 дні (днів)
| Кількість | Ціна без ПДВ |
|---|---|
| 2+ | 192.18 грн |
| 10+ | 134.54 грн |
| 100+ | 104.45 грн |
| 500+ | 85.60 грн |
| FOD3182SDV |
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Виробник: onsemi
Description: OPTOISO 5KV 1CH GATE DVR 8SMD
Mounting Type: Surface Mount
Package / Case: 8-SMD, Gull Wing
Packaging: Cut Tape (CT)
Voltage - Output Supply: 10V ~ 30V
Current - DC Forward (If) (Max): 25 mA
Number of Channels: 1
Part Status: Active
Pulse Width Distortion (Max): 65ns
Propagation Delay tpLH / tpHL (Max): 210ns, 210ns
Common Mode Transient Immunity (Min): 35kV/µs
Rise / Fall Time (Typ): 38ns, 24ns
Supplier Device Package: 8-SMD
Approval Agency: UL, VDE
Voltage - Isolation: 5000Vrms
Current - Output High, Low: 2.5A, 2.5A
Technology: Optical Coupling
Current - Peak Output: 3A
Voltage - Forward (Vf) (Typ): 1.43V
Operating Temperature: -40°C ~ 100°C
Description: OPTOISO 5KV 1CH GATE DVR 8SMD
Mounting Type: Surface Mount
Package / Case: 8-SMD, Gull Wing
Packaging: Cut Tape (CT)
Voltage - Output Supply: 10V ~ 30V
Current - DC Forward (If) (Max): 25 mA
Number of Channels: 1
Part Status: Active
Pulse Width Distortion (Max): 65ns
Propagation Delay tpLH / tpHL (Max): 210ns, 210ns
Common Mode Transient Immunity (Min): 35kV/µs
Rise / Fall Time (Typ): 38ns, 24ns
Supplier Device Package: 8-SMD
Approval Agency: UL, VDE
Voltage - Isolation: 5000Vrms
Current - Output High, Low: 2.5A, 2.5A
Technology: Optical Coupling
Current - Peak Output: 3A
Voltage - Forward (Vf) (Typ): 1.43V
Operating Temperature: -40°C ~ 100°C
на замовлення 22195 шт:
термін постачання 21-31 дні (днів)
| Кількість | Ціна без ПДВ |
|---|---|
| 2+ | 220.85 грн |
| 10+ | 155.43 грн |
| 100+ | 121.50 грн |
| 500+ | 100.02 грн |
| FMBS2383 |
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Виробник: onsemi
Description: TRANS NPN 160V 0.8A SUPERSOT-6
Power - Max: 630 mW
Voltage - Collector Emitter Breakdown (Max): 160 V
Current - Collector (Ic) (Max): 800 mA
Part Status: Obsolete
Supplier Device Package: SuperSOT™-6
Frequency - Transition: 120MHz
DC Current Gain (hFE) (Min) @ Ic, Vce: 80 @ 100mA, 5V
Current - Collector Cutoff (Max): 100nA (ICBO)
Vce Saturation (Max) @ Ib, Ic: 1V @ 50mA, 500mA
Operating Temperature: 150°C (TJ)
Transistor Type: NPN
Mounting Type: Surface Mount
Package / Case: SOT-23-6 Thin, TSOT-23-6
Packaging: Cut Tape (CT)
Description: TRANS NPN 160V 0.8A SUPERSOT-6
Power - Max: 630 mW
Voltage - Collector Emitter Breakdown (Max): 160 V
Current - Collector (Ic) (Max): 800 mA
Part Status: Obsolete
Supplier Device Package: SuperSOT™-6
Frequency - Transition: 120MHz
DC Current Gain (hFE) (Min) @ Ic, Vce: 80 @ 100mA, 5V
Current - Collector Cutoff (Max): 100nA (ICBO)
Vce Saturation (Max) @ Ib, Ic: 1V @ 50mA, 500mA
Operating Temperature: 150°C (TJ)
Transistor Type: NPN
Mounting Type: Surface Mount
Package / Case: SOT-23-6 Thin, TSOT-23-6
Packaging: Cut Tape (CT)
товару немає в наявності
В кошику
од. на суму грн.
| FXLA0104QFX |
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Виробник: onsemi
Description: IC XLTR VL BIDIR 12-UMLP
Packaging: Cut Tape (CT)
Features: Auto-Direction Sensing, Power-Off Protection
Package / Case: 12-UFQFN
Output Type: Tri-State, Non-Inverted
Mounting Type: Surface Mount
Operating Temperature: -40°C ~ 85°C (TA)
Data Rate: 140Mbps
Supplier Device Package: 12-UMLP (1.7x2)
Channel Type: Bidirectional
Translator Type: Voltage Level
Channels per Circuit: 4
Voltage - VCCA: 1.1 V ~ 3.6 V
Voltage - VCCB: 1.1 V ~ 3.6 V
Number of Circuits: 1
Description: IC XLTR VL BIDIR 12-UMLP
Packaging: Cut Tape (CT)
Features: Auto-Direction Sensing, Power-Off Protection
Package / Case: 12-UFQFN
Output Type: Tri-State, Non-Inverted
Mounting Type: Surface Mount
Operating Temperature: -40°C ~ 85°C (TA)
Data Rate: 140Mbps
Supplier Device Package: 12-UMLP (1.7x2)
Channel Type: Bidirectional
Translator Type: Voltage Level
Channels per Circuit: 4
Voltage - VCCA: 1.1 V ~ 3.6 V
Voltage - VCCB: 1.1 V ~ 3.6 V
Number of Circuits: 1
на замовлення 64995 шт:
термін постачання 21-31 дні (днів)
| Кількість | Ціна без ПДВ |
|---|---|
| 11+ | 30.22 грн |
| 15+ | 20.45 грн |
| 25+ | 18.30 грн |
| 100+ | 14.88 грн |
| 250+ | 13.79 грн |
| 500+ | 13.14 грн |
| 1000+ | 12.45 грн |
| FAN48632UC33X |
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Виробник: onsemi
Description: IC REG CONV GSM PA 1OUT 16WLCSP
Supplier Device Package: 16-WLCSP (1.78x1.78)
Applications: Converter, GSM PA
Operating Temperature: -40°C ~ 85°C
Voltage - Input: 2.35V ~ 5.5V
Number of Outputs: 1
Mounting Type: Surface Mount
Voltage - Output: 3.3V, 3.49V
Package / Case: 16-UFBGA, WLCSP
Packaging: Cut Tape (CT)
Description: IC REG CONV GSM PA 1OUT 16WLCSP
Supplier Device Package: 16-WLCSP (1.78x1.78)
Applications: Converter, GSM PA
Operating Temperature: -40°C ~ 85°C
Voltage - Input: 2.35V ~ 5.5V
Number of Outputs: 1
Mounting Type: Surface Mount
Voltage - Output: 3.3V, 3.49V
Package / Case: 16-UFBGA, WLCSP
Packaging: Cut Tape (CT)
на замовлення 2999 шт:
термін постачання 21-31 дні (днів)
| Кількість | Ціна без ПДВ |
|---|---|
| 3+ | 126.31 грн |
| 10+ | 75.52 грн |
| 25+ | 63.46 грн |
| 100+ | 46.74 грн |
| 250+ | 40.45 грн |
| 500+ | 36.57 грн |
| 1000+ | 32.78 грн |
| FSAL200MTCX |
Виробник: onsemi
Description: IC SWITCH SPDT X 4 12OHM 16TSSOP
Operating Temperature: -40°C ~ 85°C (TA)
Mounting Type: Surface Mount
Package / Case: 16-TSSOP (0.173", 4.40mm Width)
Packaging: Tape & Reel (TR)
Number of Circuits: 4
Current - Leakage (IS(off)) (Max): 100µA
Channel Capacitance (CS(off), CD(off)): 13pF
Switch Time (Ton, Toff) (Max): 20ns, 10ns
Channel-to-Channel Matching (ΔRon): 400mOhm
Multiplexer/Demultiplexer Circuit: 2:1
Switch Circuit: SPDT
Crosstalk: -70dB @ 30MHz
Charge Injection: 7pC
Voltage - Supply, Single (V+): 3V ~ 5.5V
Supplier Device Package: 16-TSSOP
-3db Bandwidth: 137MHz
On-State Resistance (Max): 12Ohm
Description: IC SWITCH SPDT X 4 12OHM 16TSSOP
Operating Temperature: -40°C ~ 85°C (TA)
Mounting Type: Surface Mount
Package / Case: 16-TSSOP (0.173", 4.40mm Width)
Packaging: Tape & Reel (TR)
Number of Circuits: 4
Current - Leakage (IS(off)) (Max): 100µA
Channel Capacitance (CS(off), CD(off)): 13pF
Switch Time (Ton, Toff) (Max): 20ns, 10ns
Channel-to-Channel Matching (ΔRon): 400mOhm
Multiplexer/Demultiplexer Circuit: 2:1
Switch Circuit: SPDT
Crosstalk: -70dB @ 30MHz
Charge Injection: 7pC
Voltage - Supply, Single (V+): 3V ~ 5.5V
Supplier Device Package: 16-TSSOP
-3db Bandwidth: 137MHz
On-State Resistance (Max): 12Ohm
на замовлення 5000 шт:
термін постачання 21-31 дні (днів)
| Кількість | Ціна без ПДВ |
|---|---|
| 2500+ | 41.98 грн |
| 5000+ | 38.90 грн |
| FSB50250AS |
![]() |
Виробник: onsemi
Description: MOSFET IPM 500V 1.2A 23-PWRSMD
Packaging: Cut Tape (CT)
Package / Case: 23-PowerSMD Module, Gull Wing
Mounting Type: Surface Mount
Type: MOSFET
Configuration: 3 Phase
Voltage - Isolation: 1500Vrms
Current: 1.2 A
Voltage: 500 V
Description: MOSFET IPM 500V 1.2A 23-PWRSMD
Packaging: Cut Tape (CT)
Package / Case: 23-PowerSMD Module, Gull Wing
Mounting Type: Surface Mount
Type: MOSFET
Configuration: 3 Phase
Voltage - Isolation: 1500Vrms
Current: 1.2 A
Voltage: 500 V
на замовлення 390 шт:
термін постачання 21-31 дні (днів)
| Кількість | Ціна без ПДВ |
|---|---|
| 1+ | 580.41 грн |
| 10+ | 380.79 грн |
| 100+ | 282.76 грн |
| FSB50550AS |
![]() |
Виробник: onsemi
Description: MOSFET IPM 500V 2A 23-PWRSMD MOD
Packaging: Cut Tape (CT)
Package / Case: 23-PowerSMD Module, Gull Wing
Mounting Type: Surface Mount
Type: MOSFET
Configuration: 3 Phase
Voltage - Isolation: 1500Vrms
Part Status: Active
Current: 2 A
Voltage: 500 V
Description: MOSFET IPM 500V 2A 23-PWRSMD MOD
Packaging: Cut Tape (CT)
Package / Case: 23-PowerSMD Module, Gull Wing
Mounting Type: Surface Mount
Type: MOSFET
Configuration: 3 Phase
Voltage - Isolation: 1500Vrms
Part Status: Active
Current: 2 A
Voltage: 500 V
на замовлення 164494 шт:
термін постачання 21-31 дні (днів)
| Кількість | Ціна без ПДВ |
|---|---|
| 1+ | 690.44 грн |
| 10+ | 457.35 грн |
| 100+ | 355.54 грн |
| FSB50250AS |
![]() |
Виробник: onsemi
Description: MOSFET IPM 500V 1.2A 23-PWRSMD
Packaging: Tape & Reel (TR)
Package / Case: 23-PowerSMD Module, Gull Wing
Mounting Type: Surface Mount
Type: MOSFET
Configuration: 3 Phase
Voltage - Isolation: 1500Vrms
Current: 1.2 A
Voltage: 500 V
Description: MOSFET IPM 500V 1.2A 23-PWRSMD
Packaging: Tape & Reel (TR)
Package / Case: 23-PowerSMD Module, Gull Wing
Mounting Type: Surface Mount
Type: MOSFET
Configuration: 3 Phase
Voltage - Isolation: 1500Vrms
Current: 1.2 A
Voltage: 500 V
товару немає в наявності
Мінімальне замовлення: 450 шт
В кошику
од. на суму грн.
| FSB50550AS |
![]() |
Виробник: onsemi
Description: MOSFET IPM 500V 2A 23-PWRSMD MOD
Packaging: Tape & Reel (TR)
Package / Case: 23-PowerSMD Module, Gull Wing
Mounting Type: Surface Mount
Type: MOSFET
Configuration: 3 Phase
Voltage - Isolation: 1500Vrms
Part Status: Active
Current: 2 A
Voltage: 500 V
Description: MOSFET IPM 500V 2A 23-PWRSMD MOD
Packaging: Tape & Reel (TR)
Package / Case: 23-PowerSMD Module, Gull Wing
Mounting Type: Surface Mount
Type: MOSFET
Configuration: 3 Phase
Voltage - Isolation: 1500Vrms
Part Status: Active
Current: 2 A
Voltage: 500 V
на замовлення 164250 шт:
термін постачання 21-31 дні (днів)
| Кількість | Ціна без ПДВ |
|---|---|
| 450+ | 301.64 грн |
| FSB50325AT |
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Виробник: onsemi
Description: MOSFET IPM 250V 1.7A 23-PWRDIP
Packaging: Tube
Package / Case: 23-PowerDIP Module, Offset Leads
Mounting Type: Through Hole
Type: MOSFET
Configuration: 3 Phase
Voltage - Isolation: 1500Vrms
Current: 1.7 A
Voltage: 250 V
Description: MOSFET IPM 250V 1.7A 23-PWRDIP
Packaging: Tube
Package / Case: 23-PowerDIP Module, Offset Leads
Mounting Type: Through Hole
Type: MOSFET
Configuration: 3 Phase
Voltage - Isolation: 1500Vrms
Current: 1.7 A
Voltage: 250 V
товару немає в наявності
В кошику
од. на суму грн.
| FSB50550A |
![]() |
Виробник: onsemi
Description: MOSFET IPM 500V 2A 23-PWRDIP MOD
Packaging: Tube
Package / Case: 23-PowerDIP Module (0.573", 14.56mm)
Mounting Type: Through Hole
Type: MOSFET
Configuration: 3 Phase
Voltage - Isolation: 1500Vrms
Part Status: Last Time Buy
Current: 2 A
Voltage: 500 V
Description: MOSFET IPM 500V 2A 23-PWRDIP MOD
Packaging: Tube
Package / Case: 23-PowerDIP Module (0.573", 14.56mm)
Mounting Type: Through Hole
Type: MOSFET
Configuration: 3 Phase
Voltage - Isolation: 1500Vrms
Part Status: Last Time Buy
Current: 2 A
Voltage: 500 V
товару немає в наявності
В кошику
од. на суму грн.
| FSB50550AT |
![]() |
Виробник: onsemi
Description: MOSFET IPM 500V 2A 23-PWRDIP MOD
Packaging: Tube
Package / Case: 23-PowerDIP Module (0.748", 19.00mm)
Mounting Type: Through Hole
Type: MOSFET
Configuration: 3 Phase
Voltage - Isolation: 1500Vrms
Part Status: Active
Current: 2 A
Voltage: 500 V
Description: MOSFET IPM 500V 2A 23-PWRDIP MOD
Packaging: Tube
Package / Case: 23-PowerDIP Module (0.748", 19.00mm)
Mounting Type: Through Hole
Type: MOSFET
Configuration: 3 Phase
Voltage - Isolation: 1500Vrms
Part Status: Active
Current: 2 A
Voltage: 500 V
товару немає в наявності
В кошику
од. на суму грн.
| FODM8801AV |
![]() |
Виробник: onsemi
Description: OPTOISO 3.75KV TRANS 4-MINI-FLAT
Current - DC Forward (If) (Max): 20 mA
Number of Channels: 1
Rise / Fall Time (Typ): 5µs, 5.5µs
Turn On / Turn Off Time (Typ): 6µs, 6µs
Voltage - Output (Max): 75V
Supplier Device Package: 4-Mini-Flat
Current Transfer Ratio (Max): 160% @ 1mA
Vce Saturation (Max): 400mV
Current Transfer Ratio (Min): 80% @ 1mA
Voltage - Isolation: 3750Vrms
Current - Output / Channel: 30mA
Input Type: DC
Voltage - Forward (Vf) (Typ): 1.35V
Operating Temperature: -40°C ~ 125°C
Mounting Type: Surface Mount
Output Type: Transistor
Package / Case: 4-SOIC (0.173", 4.40mm Width)
Packaging: Tube
Description: OPTOISO 3.75KV TRANS 4-MINI-FLAT
Current - DC Forward (If) (Max): 20 mA
Number of Channels: 1
Rise / Fall Time (Typ): 5µs, 5.5µs
Turn On / Turn Off Time (Typ): 6µs, 6µs
Voltage - Output (Max): 75V
Supplier Device Package: 4-Mini-Flat
Current Transfer Ratio (Max): 160% @ 1mA
Vce Saturation (Max): 400mV
Current Transfer Ratio (Min): 80% @ 1mA
Voltage - Isolation: 3750Vrms
Current - Output / Channel: 30mA
Input Type: DC
Voltage - Forward (Vf) (Typ): 1.35V
Operating Temperature: -40°C ~ 125°C
Mounting Type: Surface Mount
Output Type: Transistor
Package / Case: 4-SOIC (0.173", 4.40mm Width)
Packaging: Tube
на замовлення 961 шт:
термін постачання 21-31 дні (днів)
| Кількість | Ціна без ПДВ |
|---|---|
| 3+ | 110.81 грн |
| 10+ | 75.96 грн |
| 100+ | 57.45 грн |
| 500+ | 46.24 грн |
| FODM8801BV |
![]() |
Виробник: onsemi
Description: OPTOISO 3.75KV TRANS 4-MINI-FLAT
Packaging: Tube
Package / Case: 4-SOIC (0.173", 4.40mm Width)
Output Type: Transistor
Mounting Type: Surface Mount
Operating Temperature: -40°C ~ 125°C
Voltage - Forward (Vf) (Typ): 1.35V
Input Type: DC
Current - Output / Channel: 30mA
Voltage - Isolation: 3750Vrms
Current Transfer Ratio (Min): 130% @ 1mA
Vce Saturation (Max): 400mV
Current Transfer Ratio (Max): 260% @ 1mA
Supplier Device Package: 4-Mini-Flat
Voltage - Output (Max): 75V
Turn On / Turn Off Time (Typ): 6µs, 6µs
Rise / Fall Time (Typ): 5µs, 5.5µs
Number of Channels: 1
Current - DC Forward (If) (Max): 20 mA
Description: OPTOISO 3.75KV TRANS 4-MINI-FLAT
Packaging: Tube
Package / Case: 4-SOIC (0.173", 4.40mm Width)
Output Type: Transistor
Mounting Type: Surface Mount
Operating Temperature: -40°C ~ 125°C
Voltage - Forward (Vf) (Typ): 1.35V
Input Type: DC
Current - Output / Channel: 30mA
Voltage - Isolation: 3750Vrms
Current Transfer Ratio (Min): 130% @ 1mA
Vce Saturation (Max): 400mV
Current Transfer Ratio (Max): 260% @ 1mA
Supplier Device Package: 4-Mini-Flat
Voltage - Output (Max): 75V
Turn On / Turn Off Time (Typ): 6µs, 6µs
Rise / Fall Time (Typ): 5µs, 5.5µs
Number of Channels: 1
Current - DC Forward (If) (Max): 20 mA
на замовлення 238284 шт:
термін постачання 21-31 дні (днів)
| Кількість | Ціна без ПДВ |
|---|---|
| 3+ | 105.39 грн |
| 10+ | 72.31 грн |
| 150+ | 52.32 грн |
| 600+ | 43.18 грн |
| 1050+ | 41.29 грн |
| 2100+ | 39.28 грн |
| 5100+ | 36.53 грн |
| 10050+ | 35.20 грн |
| FAN7171M-F085 |
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Виробник: onsemi
Description: IC GATE DRVR HIGH-SIDE 8SOIC
Qualification: AEC-Q100
Grade: Automotive
Gate Type: IGBT, MOSFET (N-Channel)
Number of Drivers: 1
Driven Configuration: High-Side
Channel Type: Single
Rise / Fall Time (Typ): 25ns, 15ns
Supplier Device Package: 8-SOIC
High Side Voltage - Max (Bootstrap): 600 V
Input Type: Non-Inverting
Voltage - Supply: 10V ~ 20V
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: 8-SOIC (0.154", 3.90mm Width)
Packaging: Tube
DigiKey Programmable: Not Verified
Part Status: Obsolete
Current - Peak Output (Source, Sink): 4A, 4A
Logic Voltage - VIL, VIH: 0.8V, 2.5V
Description: IC GATE DRVR HIGH-SIDE 8SOIC
Qualification: AEC-Q100
Grade: Automotive
Gate Type: IGBT, MOSFET (N-Channel)
Number of Drivers: 1
Driven Configuration: High-Side
Channel Type: Single
Rise / Fall Time (Typ): 25ns, 15ns
Supplier Device Package: 8-SOIC
High Side Voltage - Max (Bootstrap): 600 V
Input Type: Non-Inverting
Voltage - Supply: 10V ~ 20V
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: 8-SOIC (0.154", 3.90mm Width)
Packaging: Tube
DigiKey Programmable: Not Verified
Part Status: Obsolete
Current - Peak Output (Source, Sink): 4A, 4A
Logic Voltage - VIL, VIH: 0.8V, 2.5V
на замовлення 3265 шт:
термін постачання 21-31 дні (днів)
| Кількість | Ціна без ПДВ |
|---|---|
| 2+ | 222.40 грн |
| 10+ | 160.21 грн |
| 95+ | 132.51 грн |
| 190+ | 119.14 грн |
| 285+ | 116.52 грн |
| 570+ | 112.69 грн |
| 1045+ | 108.10 грн |
| 2565+ | 104.80 грн |
| FCPF260N60E-F152 |
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Виробник: onsemi
Description: MOSFET N-CH 600V 15A TO220F
Supplier Device Package: TO-220F-3
Vgs(th) (Max) @ Id: 3.5V @ 250µA
Power Dissipation (Max): 36W (Tc)
Rds On (Max) @ Id, Vgs: 260mOhm @ 7.5A, 10V
Current - Continuous Drain (Id) @ 25°C: 15A (Tc)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Through Hole
Package / Case: TO-220-3 Full Pack
Packaging: Tube
Input Capacitance (Ciss) (Max) @ Vds: 2500 pF @ 25 V
Gate Charge (Qg) (Max) @ Vgs: 62 nC @ 10 V
Drain to Source Voltage (Vdss): 600 V
Part Status: Obsolete
Description: MOSFET N-CH 600V 15A TO220F
Supplier Device Package: TO-220F-3
Vgs(th) (Max) @ Id: 3.5V @ 250µA
Power Dissipation (Max): 36W (Tc)
Rds On (Max) @ Id, Vgs: 260mOhm @ 7.5A, 10V
Current - Continuous Drain (Id) @ 25°C: 15A (Tc)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Through Hole
Package / Case: TO-220-3 Full Pack
Packaging: Tube
Input Capacitance (Ciss) (Max) @ Vds: 2500 pF @ 25 V
Gate Charge (Qg) (Max) @ Vgs: 62 nC @ 10 V
Drain to Source Voltage (Vdss): 600 V
Part Status: Obsolete
товару немає в наявності
В кошику
од. на суму грн.
| FDI045N10A-F102 |
![]() |
Виробник: onsemi
Description: MOSFET N-CH 100V 120A I2PAK
Packaging: Tube
Package / Case: TO-262-3 Long Leads, I2PAK, TO-262AA
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 120A (Tc)
Rds On (Max) @ Id, Vgs: 4.5mOhm @ 100A, 10V
Power Dissipation (Max): 263W (Tc)
Vgs(th) (Max) @ Id: 4V @ 250µA
Supplier Device Package: TO-262 (I2PAK)
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 100 V
Gate Charge (Qg) (Max) @ Vgs: 74 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 5270 pF @ 50 V
Description: MOSFET N-CH 100V 120A I2PAK
Packaging: Tube
Package / Case: TO-262-3 Long Leads, I2PAK, TO-262AA
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 120A (Tc)
Rds On (Max) @ Id, Vgs: 4.5mOhm @ 100A, 10V
Power Dissipation (Max): 263W (Tc)
Vgs(th) (Max) @ Id: 4V @ 250µA
Supplier Device Package: TO-262 (I2PAK)
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 100 V
Gate Charge (Qg) (Max) @ Vgs: 74 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 5270 pF @ 50 V
на замовлення 222 шт:
термін постачання 21-31 дні (днів)
| Кількість | Ціна без ПДВ |
|---|---|
| 1+ | 347.16 грн |
| 50+ | 174.51 грн |
| 100+ | 159.08 грн |
| FDP023N08B-F102 |
![]() |
Виробник: onsemi
Description: MOSFET N-CH 75V 120A TO220-3
Input Capacitance (Ciss) (Max) @ Vds: 13765 pF @ 37.5 V
Gate Charge (Qg) (Max) @ Vgs: 195 nC @ 10 V
Drain to Source Voltage (Vdss): 75 V
Vgs (Max): ±20V
Drive Voltage (Max Rds On, Min Rds On): 10V
Part Status: Active
Supplier Device Package: TO-220-3
Vgs(th) (Max) @ Id: 3.8V @ 250µA
Power Dissipation (Max): 245W (Tc)
Operating Temperature: -55°C ~ 175°C (TJ)
Mounting Type: Through Hole
Package / Case: TO-220-3
Packaging: Tube
Rds On (Max) @ Id, Vgs: 2.35mOhm @ 75A, 10V
Current - Continuous Drain (Id) @ 25°C: 120A (Tc)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Description: MOSFET N-CH 75V 120A TO220-3
Input Capacitance (Ciss) (Max) @ Vds: 13765 pF @ 37.5 V
Gate Charge (Qg) (Max) @ Vgs: 195 nC @ 10 V
Drain to Source Voltage (Vdss): 75 V
Vgs (Max): ±20V
Drive Voltage (Max Rds On, Min Rds On): 10V
Part Status: Active
Supplier Device Package: TO-220-3
Vgs(th) (Max) @ Id: 3.8V @ 250µA
Power Dissipation (Max): 245W (Tc)
Operating Temperature: -55°C ~ 175°C (TJ)
Mounting Type: Through Hole
Package / Case: TO-220-3
Packaging: Tube
Rds On (Max) @ Id, Vgs: 2.35mOhm @ 75A, 10V
Current - Continuous Drain (Id) @ 25°C: 120A (Tc)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
на замовлення 760 шт:
термін постачання 21-31 дні (днів)
| Кількість | Ціна без ПДВ |
|---|---|
| 1+ | 315.39 грн |
| 50+ | 156.93 грн |
| 100+ | 142.72 грн |
| 500+ | 110.59 грн |
| FDP027N08B-F102 |
![]() |
Виробник: onsemi
Description: MOSFET N-CH 80V 120A TO220-3
Packaging: Tube
Package / Case: TO-220-3
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 120A (Tc)
Rds On (Max) @ Id, Vgs: 2.7mOhm @ 100A, 10V
Power Dissipation (Max): 246W (Tc)
Vgs(th) (Max) @ Id: 4.5V @ 250µA
Supplier Device Package: TO-220-3
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 80 V
Gate Charge (Qg) (Max) @ Vgs: 178 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 13530 pF @ 40 V
Description: MOSFET N-CH 80V 120A TO220-3
Packaging: Tube
Package / Case: TO-220-3
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 120A (Tc)
Rds On (Max) @ Id, Vgs: 2.7mOhm @ 100A, 10V
Power Dissipation (Max): 246W (Tc)
Vgs(th) (Max) @ Id: 4.5V @ 250µA
Supplier Device Package: TO-220-3
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 80 V
Gate Charge (Qg) (Max) @ Vgs: 178 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 13530 pF @ 40 V
на замовлення 348 шт:
термін постачання 21-31 дні (днів)
| Кількість | Ціна без ПДВ |
|---|---|
| 2+ | 278.97 грн |
| 50+ | 137.18 грн |
| 100+ | 124.51 грн |
| FDP030N06B-F102 |
![]() |
Виробник: onsemi
Description: MOSFET N-CH 60V 120A TO220-3
Packaging: Tube
Package / Case: TO-220-3
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 120A (Tc)
Rds On (Max) @ Id, Vgs: 3.1mOhm @ 100A, 10V
Power Dissipation (Max): 205W (Tc)
Vgs(th) (Max) @ Id: 4V @ 250µA
Supplier Device Package: TO-220-3
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 60 V
Gate Charge (Qg) (Max) @ Vgs: 99 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 8030 pF @ 30 V
Description: MOSFET N-CH 60V 120A TO220-3
Packaging: Tube
Package / Case: TO-220-3
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 120A (Tc)
Rds On (Max) @ Id, Vgs: 3.1mOhm @ 100A, 10V
Power Dissipation (Max): 205W (Tc)
Vgs(th) (Max) @ Id: 4V @ 250µA
Supplier Device Package: TO-220-3
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 60 V
Gate Charge (Qg) (Max) @ Vgs: 99 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 8030 pF @ 30 V
на замовлення 350 шт:
термін постачання 21-31 дні (днів)
| Кількість | Ціна без ПДВ |
|---|---|
| 2+ | 213.87 грн |
| 50+ | 103.16 грн |
| 100+ | 93.14 грн |







































