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2SC5414AE-AA onsemi Description: TRANS NPN 12V 0.1A 3NP
Packaging: Tape & Reel (TR)
Package / Case: TO-226-3, TO-92-3 (TO-226AA)
Mounting Type: Through Hole
Supplier Device Package: 3-NP
Part Status: Obsolete
товар відсутній
2SC5414AF onsemi Description: TRANS NPN 12V 0.1A 3NP
Packaging: Bag
Package / Case: TO-226-3, TO-92-3 (TO-226AA)
Mounting Type: Through Hole
Supplier Device Package: 3-NP
Part Status: Obsolete
товар відсутній
2SC5414AF-AA onsemi Description: TRANS NPN 12V 0.1A 3NP
Packaging: Tape & Reel (TR)
Package / Case: TO-226-3, TO-92-3 (TO-226AA)
Mounting Type: Through Hole
Supplier Device Package: 3-NP
Part Status: Obsolete
товар відсутній
2SC5415AF-TD-E 2SC5415AF-TD-E onsemi ena1080-d.pdf Description: RF TRANS NPN 12V 6.7GHZ PCP
Packaging: Tape & Reel (TR)
Package / Case: TO-243AA
Mounting Type: Surface Mount
Transistor Type: NPN
Operating Temperature: 150°C (TJ)
Gain: 9dB
Power - Max: 800mW
Current - Collector (Ic) (Max): 100mA
Voltage - Collector Emitter Breakdown (Max): 12V
DC Current Gain (hFE) (Min) @ Ic, Vce: 90 @ 30mA, 5V
Frequency - Transition: 6.7GHz
Noise Figure (dB Typ @ f): 1.1dB @ 1GHz
Supplier Device Package: PCP
Part Status: Obsolete
товар відсутній
2SC5488-TL-E 2SC5488-TL-E onsemi Description: TRANS NPN 10V 0.07A 3SSFP
Packaging: Tape & Reel (TR)
Package / Case: SOT-623F
Mounting Type: Surface Mount
Supplier Device Package: 3-SSFP
Part Status: Obsolete
товар відсутній
2SC5706-P-E 2SC5706-P-E onsemi Description: TRANS NPN 100V 5A TP
Packaging: Bag
Package / Case: TO-251-3 Short Leads, IPak, TO-251AA
Mounting Type: Through Hole
Transistor Type: NPN
Vce Saturation (Max) @ Ib, Ic: 240mV @ 100mA, 2A
Current - Collector Cutoff (Max): 1µA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce: 200 @ 500mA, 2V
Frequency - Transition: 400MHz
Supplier Device Package: TP
Part Status: Obsolete
Current - Collector (Ic) (Max): 5 A
Voltage - Collector Emitter Breakdown (Max): 100 V
Power - Max: 800 mW
товар відсутній
2SC5706-P-TL-E 2SC5706-P-TL-E onsemi Description: TRANS NPN 100V 5A TPFA
Packaging: Tape & Reel (TR)
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Mounting Type: Surface Mount
Transistor Type: NPN
Vce Saturation (Max) @ Ib, Ic: 240mV @ 100mA, 2A
Current - Collector Cutoff (Max): 1µA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce: 200 @ 500mA, 2V
Frequency - Transition: 400MHz
Supplier Device Package: TP-FA
Part Status: Obsolete
Current - Collector (Ic) (Max): 5 A
Voltage - Collector Emitter Breakdown (Max): 100 V
Power - Max: 800 mW
товар відсутній
2SC5964-S-TD-E 2SC5964-S-TD-E onsemi Description: TRANS NPN 50V 3A PCP
Packaging: Tape & Reel (TR)
Package / Case: TO-243AA
Mounting Type: Surface Mount
Transistor Type: NPN
Vce Saturation (Max) @ Ib, Ic: 290mV @ 100mA, 2A
Current - Collector Cutoff (Max): 1µA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce: 200 @ 100mA, 2V
Frequency - Transition: 380MHz
Supplier Device Package: PCP
Part Status: Obsolete
Current - Collector (Ic) (Max): 3 A
Voltage - Collector Emitter Breakdown (Max): 50 V
Power - Max: 1.3 W
товар відсутній
2SC5964-S-TD-H 2SC5964-S-TD-H onsemi Description: TRANS NPN 50V 3A PCP
Packaging: Tape & Reel (TR)
Package / Case: TO-243AA
Mounting Type: Surface Mount
Transistor Type: NPN
Vce Saturation (Max) @ Ib, Ic: 290mV @ 100mA, 2A
Current - Collector Cutoff (Max): 1µA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce: 200 @ 100mA, 2V
Frequency - Transition: 380MHz
Supplier Device Package: PCP
Part Status: Obsolete
Current - Collector (Ic) (Max): 3 A
Voltage - Collector Emitter Breakdown (Max): 50 V
Power - Max: 1.3 W
товар відсутній
2SC5964-TD-H 2SC5964-TD-H onsemi 2sa2125-d.pdf Description: TRANS NPN 50V 3A PCP
Packaging: Tape & Reel (TR)
Package / Case: TO-243AA
Mounting Type: Surface Mount
Transistor Type: NPN
Operating Temperature: 150°C (TJ)
Vce Saturation (Max) @ Ib, Ic: 290mV @ 100mA, 2A
Current - Collector Cutoff (Max): 1µA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce: 200 @ 100mA, 2V
Frequency - Transition: 380MHz
Supplier Device Package: PCP
Part Status: Active
Current - Collector (Ic) (Max): 3 A
Voltage - Collector Emitter Breakdown (Max): 50 V
Power - Max: 3.5 W
на замовлення 1000 шт:
термін постачання 21-31 дні (днів)
1000+10.64 грн
Мінімальне замовлення: 1000
2SC6017-TL-EX 2SC6017-TL-EX onsemi Description: TRANS NPN 50V 10A TPFA
Packaging: Tape & Reel (TR)
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Mounting Type: Surface Mount
Transistor Type: NPN
Vce Saturation (Max) @ Ib, Ic: 360mV @ 250mA, 5A
Current - Collector Cutoff (Max): 10µA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce: 200 @ 1A, 2V
Frequency - Transition: 200MHz
Supplier Device Package: TP-FA
Part Status: Obsolete
Current - Collector (Ic) (Max): 10 A
Voltage - Collector Emitter Breakdown (Max): 50 V
Power - Max: 950 mW
товар відсутній
2SC6082-1E 2SC6082-1E onsemi ena0279-d.pdf Description: TRANS NPN 50V 15A TO220F-3SG
Packaging: Tube
Package / Case: TO-220-3 Full Pack
Mounting Type: Through Hole
Transistor Type: NPN
Operating Temperature: 150°C (TJ)
Vce Saturation (Max) @ Ib, Ic: 400mV @ 375mA, 7.5A
Current - Collector Cutoff (Max): 10µA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce: 200 @ 330mA, 2V
Frequency - Transition: 195MHz
Supplier Device Package: TO-220F-3SG
Part Status: Active
Current - Collector (Ic) (Max): 15 A
Voltage - Collector Emitter Breakdown (Max): 50 V
Power - Max: 2 W
товар відсутній
2SC6082-EPN-1E 2SC6082-EPN-1E onsemi ena0279jp-d.pdf Description: TRANS NPN 50V 15A TO220F-3SG
Packaging: Tube
Package / Case: TO-220-3 Full Pack
Mounting Type: Through Hole
Transistor Type: NPN
Vce Saturation (Max) @ Ib, Ic: 400mV @ 375mA, 7.5A
Current - Collector Cutoff (Max): 10µA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce: 200 @ 330mA, 2V
Frequency - Transition: 195MHz
Supplier Device Package: TO-220F-3SG
Part Status: Active
Current - Collector (Ic) (Max): 15 A
Voltage - Collector Emitter Breakdown (Max): 50 V
Power - Max: 2 W
товар відсутній
2SD1060R-1EX 2SD1060R-1EX onsemi en686-d.pdf Description: TRANS NPN 50V 5A TO220-3
Packaging: Tube
Package / Case: TO-220-3
Mounting Type: Through Hole
Transistor Type: NPN
Operating Temperature: 150°C (TJ)
Vce Saturation (Max) @ Ib, Ic: 300mV @ 300mA, 3A
Current - Collector Cutoff (Max): 100µA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce: 100 @ 1A, 2V
Frequency - Transition: 30MHz
Supplier Device Package: TO-220-3
Current - Collector (Ic) (Max): 5 A
Voltage - Collector Emitter Breakdown (Max): 50 V
Power - Max: 1.75 W
товар відсутній
2SD1060S-1E 2SD1060S-1E onsemi en686-d.pdf Description: TRANS NPN 50V 5A TO220-3
Packaging: Tube
Package / Case: TO-220-3
Mounting Type: Through Hole
Transistor Type: NPN
Operating Temperature: 150°C (TJ)
Vce Saturation (Max) @ Ib, Ic: 300mV @ 300mA, 3A
Current - Collector Cutoff (Max): 100µA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce: 140 @ 1A, 2V
Frequency - Transition: 30MHz
Supplier Device Package: TO-220-3
Part Status: Active
Current - Collector (Ic) (Max): 5 A
Voltage - Collector Emitter Breakdown (Max): 50 V
Power - Max: 1.75 W
на замовлення 349 шт:
термін постачання 21-31 дні (днів)
3+100.85 грн
50+ 78.26 грн
100+ 62.02 грн
Мінімальне замовлення: 3
2SJ652-1E 2SJ652-1E onsemi Description: MOSFET P-CH 60V 28A TO220F-3SG
Packaging: Tube
Package / Case: TO-220-3 Full Pack
Mounting Type: Through Hole
Operating Temperature: 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: P-Channel
Current - Continuous Drain (Id) @ 25°C: 28A (Ta)
Rds On (Max) @ Id, Vgs: 38mOhm @ 14A, 10V
Power Dissipation (Max): 2W (Ta), 30W (Tc)
Supplier Device Package: TO-220F-3SG
Part Status: Obsolete
Drive Voltage (Max Rds On, Min Rds On): 4V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 60 V
Gate Charge (Qg) (Max) @ Vgs: 80 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 4360 pF @ 20 V
товар відсутній
2SK3703-1E 2SK3703-1E onsemi Description: MOSFET N-CH 60V 30A TO220F-3SG
Packaging: Tube
Package / Case: TO-220-3 Full Pack
Mounting Type: Through Hole
Operating Temperature: 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 30A (Ta)
Rds On (Max) @ Id, Vgs: 26mOhm @ 15A, 10V
Power Dissipation (Max): 2W (Ta), 25W (Tc)
Supplier Device Package: TO-220F-3SG
Part Status: Obsolete
Drive Voltage (Max Rds On, Min Rds On): 4V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 60 V
Gate Charge (Qg) (Max) @ Vgs: 40 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 1780 pF @ 20 V
товар відсутній
2SK3707-1E 2SK3707-1E onsemi Description: MOSFET N-CH 100V 20A TO220F-3SG
Packaging: Tube
Package / Case: TO-220-3 Full Pack
Mounting Type: Through Hole
Operating Temperature: 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 20A (Ta)
Rds On (Max) @ Id, Vgs: 60mOhm @ 10A, 10V
Power Dissipation (Max): 2W (Ta), 25W (Tc)
Supplier Device Package: TO-220F-3SG
Part Status: Obsolete
Drive Voltage (Max Rds On, Min Rds On): 4V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 100 V
Gate Charge (Qg) (Max) @ Vgs: 44 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 2150 pF @ 20 V
товар відсутній
2SK3738-TL-E 2SK3738-TL-E onsemi 2SK3738.pdf Description: JFET N-CH 40V 1MA SMCP
Packaging: Tape & Reel (TR)
Package / Case: SC-75, SOT-416
Mounting Type: Surface Mount
Operating Temperature: 150°C (TJ)
FET Type: N-Channel
Input Capacitance (Ciss) (Max) @ Vds: 1.7pF @ 10V
Voltage - Breakdown (V(BR)GSS): 40 V
Current Drain (Id) - Max: 1 mA
Supplier Device Package: SMCP
Drain to Source Voltage (Vdss): 40 V
Power - Max: 100 mW
Voltage - Cutoff (VGS off) @ Id: 2.3 V @ 1 µA
Current - Drain (Idss) @ Vds (Vgs=0): 50 µA @ 10 V
товар відсутній
2SK3745LS-1E 2SK3745LS-1E onsemi 2sk3745ls-d.pdf Description: MOSFET N-CH 1500V 2A TO220F-3FS
Packaging: Tube
Package / Case: TO-220-3 Full Pack
Mounting Type: Through Hole
Operating Temperature: 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 2A (Ta)
Rds On (Max) @ Id, Vgs: 13Ohm @ 1A, 10V
Power Dissipation (Max): 2W (Ta), 35W (Tc)
Supplier Device Package: TO-220F-3FS
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 1500 V
Gate Charge (Qg) (Max) @ Vgs: 37.5 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 380 pF @ 30 V
товар відсутній
2SK3746-1E 2SK3746-1E onsemi 2sk3746-d.pdf Description: MOSFET N-CH 1500V 2A TO3P-3L
товар відсутній
2SK3747-1E 2SK3747-1E onsemi 2sk3747-d.pdf Description: MOSFET N-CH 1500V 2A TO3PF-3
Packaging: Tube
Package / Case: SC-94
Mounting Type: Through Hole
Operating Temperature: 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 2A (Ta)
Rds On (Max) @ Id, Vgs: 13Ohm @ 1A, 10V
Power Dissipation (Max): 3W (Ta), 50W (Tc)
Supplier Device Package: TO-3PF-3
Part Status: Obsolete
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±35V
Drain to Source Voltage (Vdss): 1500 V
Gate Charge (Qg) (Max) @ Vgs: 37.5 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 380 pF @ 30 V
товар відсутній
2SK3748-1E 2SK3748-1E onsemi 2SK3748.pdf Description: MOSFET N-CH 1500V 4A TO3PF-3
Packaging: Tube
Package / Case: SC-94
Mounting Type: Through Hole
Operating Temperature: 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 4A (Ta)
Rds On (Max) @ Id, Vgs: 7Ohm @ 2A, 10V
Power Dissipation (Max): 3W (Ta), 65W (Tc)
Supplier Device Package: TO-3PF-3
Part Status: Obsolete
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 1500 V
Gate Charge (Qg) (Max) @ Vgs: 80 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 790 pF @ 30 V
товар відсутній
2SK3820-DL-1E 2SK3820-DL-1E onsemi 2sk3820-d.pdf Description: MOSFET N-CH 100V 26A TO263-2
Packaging: Tape & Reel (TR)
Package / Case: TO-263-3, D²Pak (2 Leads + Tab), TO-263AB
Mounting Type: Surface Mount
Operating Temperature: 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 26A (Ta)
Rds On (Max) @ Id, Vgs: 60mOhm @ 13A, 10V
Power Dissipation (Max): 1.65W (Ta), 50W (Tc)
Supplier Device Package: TO-263-2
Part Status: Obsolete
Drive Voltage (Max Rds On, Min Rds On): 4V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 100 V
Gate Charge (Qg) (Max) @ Vgs: 44 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 2150 pF @ 20 V
товар відсутній
2SK4066-1E 2SK4066-1E onsemi ONSMS35711-1.pdf?t.download=true&u=5oefqw Description: MOSFET N-CH 60V 100A TO262-3
Packaging: Tube
Package / Case: TO-262-3 Long Leads, I²Pak, TO-262AA
Mounting Type: Through Hole
Operating Temperature: 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 100A (Ta)
Rds On (Max) @ Id, Vgs: 4.7mOhm @ 50A, 10V
Power Dissipation (Max): 1.65W (Ta), 90W (Tc)
Supplier Device Package: TO-262-3
Part Status: Obsolete
Drive Voltage (Max Rds On, Min Rds On): 4V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 60 V
Gate Charge (Qg) (Max) @ Vgs: 220 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 12500 pF @ 20 V
товар відсутній
2SK4066-DL-1E 2SK4066-DL-1E onsemi ONSMS35711-1.pdf?t.download=true&u=5oefqw Description: MOSFET N-CH 60V 100A TO263-2
Packaging: Tape & Reel (TR)
Package / Case: TO-263-3, D²Pak (2 Leads + Tab), TO-263AB
Mounting Type: Surface Mount
Operating Temperature: 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 100A (Ta)
Rds On (Max) @ Id, Vgs: 4.7mOhm @ 50A, 10V
Power Dissipation (Max): 1.65W (Ta), 90W (Tc)
Supplier Device Package: TO-263-2
Part Status: Obsolete
Drive Voltage (Max Rds On, Min Rds On): 4V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 60 V
Gate Charge (Qg) (Max) @ Vgs: 220 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 12500 pF @ 20 V
товар відсутній
2SK4087LS-1E 2SK4087LS-1E onsemi Description: MOSFET N-CH 600V 9.2A TO220F-3FS
Packaging: Tube
Package / Case: TO-220-3 Full Pack
Mounting Type: Through Hole
Operating Temperature: 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 9.2A (Tc)
Rds On (Max) @ Id, Vgs: 610mOhm @ 7A, 10V
Power Dissipation (Max): 2W (Ta), 40W (Tc)
Supplier Device Package: TO-220F-3FS
Part Status: Obsolete
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±30V
Drain to Source Voltage (Vdss): 600 V
Gate Charge (Qg) (Max) @ Vgs: 46 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 1200 pF @ 30 V
товар відсутній
2SK4088LS-1E 2SK4088LS-1E onsemi 2SK4088LS_May2013.pdf Description: MOSFET N-CH 650V 7.5A TO220F-3FS
Packaging: Tube
Package / Case: TO-220-3 Full Pack
Mounting Type: Through Hole
Operating Temperature: 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 7.5A (Tc)
Rds On (Max) @ Id, Vgs: 850mOhm @ 5.5A, 10V
Power Dissipation (Max): 2W (Ta), 37W (Tc)
Supplier Device Package: TO-220F-3FS
Part Status: Obsolete
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±30V
Drain to Source Voltage (Vdss): 650 V
Gate Charge (Qg) (Max) @ Vgs: 37.6 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 1000 pF @ 30 V
товар відсутній
2SK4099LS-1E 2SK4099LS-1E onsemi Description: MOSFET N-CH 600V 6.9A TO220F-3FS
Packaging: Tube
Package / Case: TO-220-3 Full Pack
Mounting Type: Through Hole
Operating Temperature: 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 6.9A (Tc)
Rds On (Max) @ Id, Vgs: 940mOhm @ 4A, 10V
Power Dissipation (Max): 2W (Ta), 35W (Tc)
Supplier Device Package: TO-220F-3FS
Part Status: Obsolete
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±30V
Drain to Source Voltage (Vdss): 600 V
Gate Charge (Qg) (Max) @ Vgs: 29 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 750 pF @ 30 V
товар відсутній
2SK4124-1E 2SK4124-1E onsemi Description: MOSFET N-CH 500V 20A TO3P-3L
Packaging: Tube
Package / Case: TO-3P-3, SC-65-3
Mounting Type: Through Hole
Operating Temperature: 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 20A (Ta)
Rds On (Max) @ Id, Vgs: 430mOhm @ 8A, 10V
Power Dissipation (Max): 2.5W (Ta), 170W (Tc)
Supplier Device Package: TO-3P-3L
Part Status: Obsolete
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±30V
Drain to Source Voltage (Vdss): 500 V
Gate Charge (Qg) (Max) @ Vgs: 46.6 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 1200 pF @ 30 V
товар відсутній
2SK4125-1E 2SK4125-1E onsemi Description: MOSFET N-CH 600V 17A TO3P-3L
Packaging: Tube
Package / Case: TO-3P-3, SC-65-3
Mounting Type: Through Hole
Operating Temperature: 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 17A (Ta)
Rds On (Max) @ Id, Vgs: 610mOhm @ 7A, 10V
Power Dissipation (Max): 2.5W (Ta), 170W (Tc)
Supplier Device Package: TO-3P-3L
Part Status: Obsolete
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±30V
Drain to Source Voltage (Vdss): 600 V
Gate Charge (Qg) (Max) @ Vgs: 46 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 1200 pF @ 30 V
товар відсутній
2SK4177-DL-1E 2SK4177-DL-1E onsemi ena0869-d.pdf Description: MOSFET N-CH 1500V 2A TO263-2
Packaging: Tape & Reel (TR)
Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
Mounting Type: Surface Mount
Operating Temperature: 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 2A (Ta)
Rds On (Max) @ Id, Vgs: 13Ohm @ 1A, 10V
Power Dissipation (Max): 80W (Tc)
Supplier Device Package: TO-263-2
Part Status: Obsolete
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 1500 V
Gate Charge (Qg) (Max) @ Vgs: 37.5 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 380 pF @ 30 V
товар відсутній
2SK536-MTK-TB-E 2SK536-MTK-TB-E onsemi Description: MOSFET N-CH 50V 0.1A 3CP
Packaging: Tape & Reel (TR)
Package / Case: TO-236-3, SC-59, SOT-23-3
Mounting Type: Surface Mount
Operating Temperature: 125°C (TJ)
Current - Continuous Drain (Id) @ 25°C: 100mA (Tj)
Supplier Device Package: 3-CP
Part Status: Obsolete
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±12V
товар відсутній
2SK596S-A 2SK596S-A onsemi 2SK596S_Rev_Aug2013.pdf Description: JFET N-CH 1MA 3SPA
Packaging: Bag
Package / Case: SC-72
Mounting Type: Through Hole
Operating Temperature: 150°C (TJ)
FET Type: N-Channel
Input Capacitance (Ciss) (Max) @ Vds: 4.1pF @ 5V
Current Drain (Id) - Max: 1 mA
Supplier Device Package: 3-SPA
Part Status: Obsolete
Power - Max: 100 mW
Voltage - Cutoff (VGS off) @ Id: 500 mV @ 1 µA
Current - Drain (Idss) @ Vds (Vgs=0): 100 µA @ 5 V
Current Coupled to Voltage - Cutoff (VGS off) @ Id: 1
Voltage Coupled to Current - Drain (Idss) @ Vds (Vgs=0): 5
товар відсутній
2SK596S-C 2SK596S-C onsemi Description: JFET N-CH 1MA 3SPA
Packaging: Bag
Package / Case: SC-72
Mounting Type: Through Hole
Operating Temperature: 150°C (TJ)
FET Type: N-Channel
Input Capacitance (Ciss) (Max) @ Vds: 4.1pF @ 5V
Current Drain (Id) - Max: 1 mA
Supplier Device Package: 3-SPA
Part Status: Obsolete
Power - Max: 100 mW
Voltage - Cutoff (VGS off) @ Id: 500 mV @ 1 µA
Current - Drain (Idss) @ Vds (Vgs=0): 210 µA @ 5 V
Current Coupled to Voltage - Cutoff (VGS off) @ Id: 1
Voltage Coupled to Current - Drain (Idss) @ Vds (Vgs=0): 5
товар відсутній
3LN01S-K-TL-E 3LN01S-K-TL-E onsemi Description: MOSFET N-CH 30V 0.15A SMCP
товар відсутній
3SK263-5-TG-E 3SK263-5-TG-E onsemi 3SK263.pdf Description: FET RF 15V 200MHZ CP4
Packaging: Tape & Reel (TR)
Package / Case: TO-253-4, TO-253AA
Current Rating (Amps): 30mA
Mounting Type: Surface Mount
Frequency: 200MHz
Configuration: N-Channel Dual Gate
Gain: 21dB
Technology: MOSFET
Noise Figure: 2.2dB
Supplier Device Package: 4-CP
Part Status: Obsolete
Voltage - Rated: 15 V
Voltage - Test: 6 V
Current - Test: 10 mA
товар відсутній
5LN01SP 5LN01SP onsemi mosfets?documentNotFound=3&documentId=77736 Description: MOSFET N-CH 50V 100MA 3SPA
товар відсутній
5LP01SP 5LP01SP onsemi mosfets?documentNotFound=3&documentId=1000629 Description: MOSFET P-CH 50V 70MA 3SPA
товар відсутній
5LP01SP-AC 5LP01SP-AC onsemi mosfets?documentNotFound=3&documentId=1000629 Description: MOSFET P-CH 50V 70MA 3SPA
товар відсутній
ATP304-TL-H ATP304-TL-H onsemi Description: MOSFET P-CH 60V 100A ATPAK
Packaging: Tape & Reel (TR)
Package / Case: ATPAK (2 leads+tab)
Mounting Type: Surface Mount
Operating Temperature: 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: P-Channel
Current - Continuous Drain (Id) @ 25°C: 100A (Ta)
Rds On (Max) @ Id, Vgs: 6.5mOhm @ 50A, 10V
Power Dissipation (Max): 90W (Tc)
Supplier Device Package: ATPAK
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 60 V
Gate Charge (Qg) (Max) @ Vgs: 250 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 13000 pF @ 20 V
товар відсутній
ATP401-TL-H ATP401-TL-H onsemi ena2167-d.pdf Description: MOSFET N-CH 60V 100A ATPAK
товар відсутній
ATP404-H-TL-H ATP404-H-TL-H onsemi Description: MOSFET N-CH 60V 95A ATPAK
Packaging: Tape & Reel (TR)
Package / Case: ATPAK (2 leads+tab)
Mounting Type: Surface Mount
Operating Temperature: 150°C (TJ)
Current - Continuous Drain (Id) @ 25°C: 95A (Tj)
Supplier Device Package: ATPAK
Part Status: Obsolete
товар відсутній
BAS16P2T5G BAS16P2T5G onsemi bas16p2-d.pdf Description: DIODE GEN PURP 100V 200MA SOD923
Packaging: Tape & Reel (TR)
Package / Case: SOD-923
Mounting Type: Surface Mount
Speed: Small Signal =< 200mA (Io), Any Speed
Reverse Recovery Time (trr): 6 ns
Technology: Standard
Capacitance @ Vr, F: 2pF @ 0V, 1MHz
Current - Average Rectified (Io): 200mA
Supplier Device Package: SOD-923
Operating Temperature - Junction: -55°C ~ 150°C
Part Status: Active
Voltage - DC Reverse (Vr) (Max): 100 V
Voltage - Forward (Vf) (Max) @ If: 1.25 V @ 150 mA
Current - Reverse Leakage @ Vr: 100 µA @ 100 V
на замовлення 176000 шт:
термін постачання 21-31 дні (днів)
8000+2.42 грн
16000+ 1.94 грн
24000+ 1.9 грн
56000+ 1.6 грн
Мінімальне замовлення: 8000
BAV23CLT3G BAV23CLT3G onsemi bav23clt1-d.pdf Description: DIODE ARRAY GP 250V 400MA SOT23
Packaging: Tape & Reel (TR)
Package / Case: TO-236-3, SC-59, SOT-23-3
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 150 ns
Technology: Standard
Diode Configuration: 1 Pair Common Cathode
Current - Average Rectified (Io) (per Diode): 400mA (DC)
Supplier Device Package: SOT-23-3 (TO-236)
Operating Temperature - Junction: -55°C ~ 150°C
Part Status: Obsolete
Voltage - DC Reverse (Vr) (Max): 250 V
Voltage - Forward (Vf) (Max) @ If: 1.25 V @ 200 mA
Current - Reverse Leakage @ Vr: 100 nA @ 250 V
товар відсутній
BBS3002-DL-1E BBS3002-DL-1E onsemi Description: MOSFET P-CH 60V 100A D2PAK
Packaging: Tape & Reel (TR)
Package / Case: TO-263-3, D²Pak (2 Leads + Tab), TO-263AB
Mounting Type: Surface Mount
Operating Temperature: 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: P-Channel
Current - Continuous Drain (Id) @ 25°C: 100A (Ta)
Rds On (Max) @ Id, Vgs: 5.8mOhm @ 50A, 10V
Power Dissipation (Max): 90W (Tc)
Supplier Device Package: D²PAK (TO-263)
Drive Voltage (Max Rds On, Min Rds On): 4V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 60 V
Gate Charge (Qg) (Max) @ Vgs: 280 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 13200 pF @ 20 V
товар відсутній
BBS3002-TL-1E BBS3002-TL-1E onsemi Description: MOSFET P-CH 60V 100A D2PAK
Packaging: Tape & Reel (TR)
Package / Case: TO-263-3, D²Pak (2 Leads + Tab), TO-263AB
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: P-Channel
Current - Continuous Drain (Id) @ 25°C: 100A (Ta)
Rds On (Max) @ Id, Vgs: 5.8mOhm @ 50A, 10V
Power Dissipation (Max): 90W (Tc)
Supplier Device Package: D²PAK (TO-263)
Drive Voltage (Max Rds On, Min Rds On): 4V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 60 V
Gate Charge (Qg) (Max) @ Vgs: 280 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 13200 pF @ 20 V
товар відсутній
BC337-25RLRAG BC337-25RLRAG onsemi Description: TRANS NPN 45V 0.8A TO92
Packaging: Tape & Reel (TR)
Package / Case: TO-226-3, TO-92-3 Long Body (Formed Leads)
Mounting Type: Through Hole
Transistor Type: NPN
Operating Temperature: -55°C ~ 150°C (TJ)
Vce Saturation (Max) @ Ib, Ic: 700mV @ 50mA, 500mA
Current - Collector Cutoff (Max): 100nA
DC Current Gain (hFE) (Min) @ Ic, Vce: 160 @ 100mA, 1V
Frequency - Transition: 210MHz
Supplier Device Package: TO-92 (TO-226)
Part Status: Obsolete
Current - Collector (Ic) (Max): 800 mA
Voltage - Collector Emitter Breakdown (Max): 45 V
Power - Max: 625 mW
товар відсутній
BD135TG BD135TG onsemi bd135-d.pdf Description: TRANS NPN 45V 1.5A TO126
Packaging: Tube
Package / Case: TO-225AA, TO-126-3
Mounting Type: Through Hole
Transistor Type: NPN
Operating Temperature: -55°C ~ 150°C (TJ)
Vce Saturation (Max) @ Ib, Ic: 500mV @ 50mA, 500mA
Current - Collector Cutoff (Max): 100nA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce: 40 @ 150mA, 2V
Supplier Device Package: TO-126
Part Status: Active
Current - Collector (Ic) (Max): 1.5 A
Voltage - Collector Emitter Breakdown (Max): 45 V
Power - Max: 1.25 W
на замовлення 307 шт:
термін постачання 21-31 дні (днів)
6+51.87 грн
50+ 41.22 грн
100+ 29.91 грн
Мінімальне замовлення: 6
BD438TG BD438TG onsemi bd438-d.pdf Description: TRANS PNP 45V 4A
Packaging: Tube
Package / Case: TO-225AA, TO-126-3
Mounting Type: Through Hole
Transistor Type: PNP
Operating Temperature: -55°C ~ 150°C (TJ)
Vce Saturation (Max) @ Ib, Ic: 700mV @ 300mA, 3A
Current - Collector Cutoff (Max): 100µA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce: 85 @ 500mA, 1V
Frequency - Transition: 3MHz
Supplier Device Package: TO-126
Part Status: Active
Current - Collector (Ic) (Max): 4 A
Voltage - Collector Emitter Breakdown (Max): 45 V
Power - Max: 36 W
товар відсутній
BFL4007-1E BFL4007-1E onsemi Description: MOSFET N-CH 600V 8.7A TO220F-3FS
Packaging: Tube
Package / Case: TO-220-3 Full Pack
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 8.7A (Tc)
Rds On (Max) @ Id, Vgs: 680mOhm @ 7A, 10V
Power Dissipation (Max): 2W (Ta), 40W (Tc)
Supplier Device Package: TO-220F-3FS
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±30V
Drain to Source Voltage (Vdss): 600 V
Gate Charge (Qg) (Max) @ Vgs: 46 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 1200 pF @ 30 V
товар відсутній
BFL4026-1E BFL4026-1E onsemi bfl4026-d.pdf Description: MOSFET N-CH 900V 3.5A TO220F-3FS
Packaging: Tube
Package / Case: TO-220-3 Full Pack
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 3.5A (Tc)
Rds On (Max) @ Id, Vgs: 3.6Ohm @ 2.5A, 10V
Power Dissipation (Max): 2W (Ta), 35W (Tc)
Supplier Device Package: TO-220F-3FS
Part Status: Obsolete
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±30V
Drain to Source Voltage (Vdss): 900 V
Gate Charge (Qg) (Max) @ Vgs: 33 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 650 pF @ 30 V
товар відсутній
BFL4037-1E BFL4037-1E onsemi Description: MOSFET N-CH 500V 11A TO220F-3FS
Packaging: Tube
Package / Case: TO-220-3 Full Pack
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 11A (Tc)
Rds On (Max) @ Id, Vgs: 430mOhm @ 8A, 10V
Power Dissipation (Max): 2W (Ta), 40W (Tc)
Supplier Device Package: TO-220F-3FS
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±30V
Drain to Source Voltage (Vdss): 500 V
Gate Charge (Qg) (Max) @ Vgs: 48.6 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 1200 pF @ 30 V
товар відсутній
BMS3003-1E BMS3003-1E onsemi ena1907-d.pdf Description: MOSFET P-CH 60V 78A TO220F-3SG
Packaging: Tube
Package / Case: TO-220-3 Full Pack
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: P-Channel
Current - Continuous Drain (Id) @ 25°C: 78A (Ta)
Rds On (Max) @ Id, Vgs: 6.5mOhm @ 39A, 10V
Power Dissipation (Max): 2W (Ta), 40W (Tc)
Supplier Device Package: TO-220F-3SG
Part Status: Obsolete
Drive Voltage (Max Rds On, Min Rds On): 4V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 60 V
Gate Charge (Qg) (Max) @ Vgs: 285 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 13200 pF @ 20 V
товар відсутній
BMS3004-1E BMS3004-1E onsemi ena1908-d.pdf Description: MOSFET P-CH 75V 68A TO220F-3SG
Packaging: Tube
Package / Case: TO-220-3 Full Pack
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: P-Channel
Current - Continuous Drain (Id) @ 25°C: 68A (Ta)
Rds On (Max) @ Id, Vgs: 8.5mOhm @ 34A, 10V
Power Dissipation (Max): 2W (Ta), 40W (Tc)
Supplier Device Package: TO-220F-3SG
Part Status: Obsolete
Drive Voltage (Max Rds On, Min Rds On): 4V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 75 V
Gate Charge (Qg) (Max) @ Vgs: 300 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 13400 pF @ 20 V
товар відсутній
CAT24C04C5ATR CAT24C04C5ATR onsemi cat24c01-d.pdf Description: IC EEPROM 4KBIT I2C 5WLCSP
Packaging: Tape & Reel (TR)
Package / Case: 5-XFBGA, WLCSP
Mounting Type: Surface Mount
Memory Size: 4Kbit
Memory Type: Non-Volatile
Operating Temperature: -40°C ~ 85°C (TA)
Voltage - Supply: 1.7V ~ 5.5V
Technology: EEPROM
Clock Frequency: 400 kHz
Memory Format: EEPROM
Supplier Device Package: 5-WLCSP (0.86x0.84)
Write Cycle Time - Word, Page: 5ms
Memory Interface: I2C
Access Time: 900 ns
Memory Organization: 512 x 8
DigiKey Programmable: Not Verified
товар відсутній
CAT24C512YIGT3JN CAT24C512YIGT3JN onsemi cat24c512-d.pdf Description: IC EEPROM 512KBIT I2C 8TSSOP
Packaging: Tape & Reel (TR)
Package / Case: 8-TSSOP (0.173", 4.40mm Width)
Mounting Type: Surface Mount
Memory Size: 512Kbit
Memory Type: Non-Volatile
Operating Temperature: -40°C ~ 85°C (TA)
Voltage - Supply: 1.8V ~ 5.5V
Technology: EEPROM
Clock Frequency: 1 MHz
Memory Format: EEPROM
Supplier Device Package: 8-TSSOP
Write Cycle Time - Word, Page: 5ms
Memory Interface: I2C
Access Time: 900 ns
Memory Organization: 64K x 8
DigiKey Programmable: Not Verified
товар відсутній
CAT25256HU4I-GT3 CAT25256HU4I-GT3 onsemi cat25256-d.pdf Description: IC EEPROM 256KBIT SPI 8UDFN
Packaging: Tape & Reel (TR)
Package / Case: 8-UFDFN Exposed Pad
Mounting Type: Surface Mount
Memory Size: 256Kbit
Memory Type: Non-Volatile
Operating Temperature: -40°C ~ 85°C (TA)
Voltage - Supply: 1.8V ~ 5.5V
Technology: EEPROM
Clock Frequency: 10 MHz
Memory Format: EEPROM
Supplier Device Package: 8-UDFN-EP (2x3)
Part Status: Active
Write Cycle Time - Word, Page: 5ms
Memory Interface: SPI
Memory Organization: 32K x 8
DigiKey Programmable: Not Verified
на замовлення 9000 шт:
термін постачання 21-31 дні (днів)
3000+35.52 грн
6000+ 33.09 грн
Мінімальне замовлення: 3000
CAT25M01LI-G CAT25M01LI-G onsemi Description: IC EEPROM 1MBIT SPI 10MHZ 8DIP
Packaging: Tube
Package / Case: 8-DIP (0.300", 7.62mm)
Mounting Type: Through Hole
Memory Size: 1Mbit
Memory Type: Non-Volatile
Operating Temperature: -40°C ~ 85°C (TA)
Voltage - Supply: 1.8V ~ 5.5V
Technology: EEPROM
Clock Frequency: 10 MHz
Memory Format: EEPROM
Supplier Device Package: 8-PDIP
Write Cycle Time - Word, Page: 5ms
Memory Interface: SPI
Memory Organization: 128K x 8
DigiKey Programmable: Not Verified
товар відсутній
CAT25M01VI-G CAT25M01VI-G onsemi cat25m01-d.pdf Description: IC EEPROM 1MBIT SPI 10MHZ 8SOIC
Packaging: Tube
Package / Case: 8-SOIC (0.154", 3.90mm Width)
Mounting Type: Surface Mount
Memory Size: 1Mbit
Memory Type: Non-Volatile
Operating Temperature: -40°C ~ 85°C (TA)
Voltage - Supply: 1.8V ~ 5.5V
Technology: EEPROM
Clock Frequency: 10 MHz
Memory Format: EEPROM
Supplier Device Package: 8-SOIC
Write Cycle Time - Word, Page: 5ms
Memory Interface: SPI
Memory Organization: 128K x 8
DigiKey Programmable: Not Verified
товар відсутній
2SC5414AE-AA
Виробник: onsemi
Description: TRANS NPN 12V 0.1A 3NP
Packaging: Tape & Reel (TR)
Package / Case: TO-226-3, TO-92-3 (TO-226AA)
Mounting Type: Through Hole
Supplier Device Package: 3-NP
Part Status: Obsolete
товар відсутній
2SC5414AF
Виробник: onsemi
Description: TRANS NPN 12V 0.1A 3NP
Packaging: Bag
Package / Case: TO-226-3, TO-92-3 (TO-226AA)
Mounting Type: Through Hole
Supplier Device Package: 3-NP
Part Status: Obsolete
товар відсутній
2SC5414AF-AA
Виробник: onsemi
Description: TRANS NPN 12V 0.1A 3NP
Packaging: Tape & Reel (TR)
Package / Case: TO-226-3, TO-92-3 (TO-226AA)
Mounting Type: Through Hole
Supplier Device Package: 3-NP
Part Status: Obsolete
товар відсутній
2SC5415AF-TD-E ena1080-d.pdf
2SC5415AF-TD-E
Виробник: onsemi
Description: RF TRANS NPN 12V 6.7GHZ PCP
Packaging: Tape & Reel (TR)
Package / Case: TO-243AA
Mounting Type: Surface Mount
Transistor Type: NPN
Operating Temperature: 150°C (TJ)
Gain: 9dB
Power - Max: 800mW
Current - Collector (Ic) (Max): 100mA
Voltage - Collector Emitter Breakdown (Max): 12V
DC Current Gain (hFE) (Min) @ Ic, Vce: 90 @ 30mA, 5V
Frequency - Transition: 6.7GHz
Noise Figure (dB Typ @ f): 1.1dB @ 1GHz
Supplier Device Package: PCP
Part Status: Obsolete
товар відсутній
2SC5488-TL-E
2SC5488-TL-E
Виробник: onsemi
Description: TRANS NPN 10V 0.07A 3SSFP
Packaging: Tape & Reel (TR)
Package / Case: SOT-623F
Mounting Type: Surface Mount
Supplier Device Package: 3-SSFP
Part Status: Obsolete
товар відсутній
2SC5706-P-E
2SC5706-P-E
Виробник: onsemi
Description: TRANS NPN 100V 5A TP
Packaging: Bag
Package / Case: TO-251-3 Short Leads, IPak, TO-251AA
Mounting Type: Through Hole
Transistor Type: NPN
Vce Saturation (Max) @ Ib, Ic: 240mV @ 100mA, 2A
Current - Collector Cutoff (Max): 1µA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce: 200 @ 500mA, 2V
Frequency - Transition: 400MHz
Supplier Device Package: TP
Part Status: Obsolete
Current - Collector (Ic) (Max): 5 A
Voltage - Collector Emitter Breakdown (Max): 100 V
Power - Max: 800 mW
товар відсутній
2SC5706-P-TL-E
2SC5706-P-TL-E
Виробник: onsemi
Description: TRANS NPN 100V 5A TPFA
Packaging: Tape & Reel (TR)
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Mounting Type: Surface Mount
Transistor Type: NPN
Vce Saturation (Max) @ Ib, Ic: 240mV @ 100mA, 2A
Current - Collector Cutoff (Max): 1µA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce: 200 @ 500mA, 2V
Frequency - Transition: 400MHz
Supplier Device Package: TP-FA
Part Status: Obsolete
Current - Collector (Ic) (Max): 5 A
Voltage - Collector Emitter Breakdown (Max): 100 V
Power - Max: 800 mW
товар відсутній
2SC5964-S-TD-E
2SC5964-S-TD-E
Виробник: onsemi
Description: TRANS NPN 50V 3A PCP
Packaging: Tape & Reel (TR)
Package / Case: TO-243AA
Mounting Type: Surface Mount
Transistor Type: NPN
Vce Saturation (Max) @ Ib, Ic: 290mV @ 100mA, 2A
Current - Collector Cutoff (Max): 1µA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce: 200 @ 100mA, 2V
Frequency - Transition: 380MHz
Supplier Device Package: PCP
Part Status: Obsolete
Current - Collector (Ic) (Max): 3 A
Voltage - Collector Emitter Breakdown (Max): 50 V
Power - Max: 1.3 W
товар відсутній
2SC5964-S-TD-H
2SC5964-S-TD-H
Виробник: onsemi
Description: TRANS NPN 50V 3A PCP
Packaging: Tape & Reel (TR)
Package / Case: TO-243AA
Mounting Type: Surface Mount
Transistor Type: NPN
Vce Saturation (Max) @ Ib, Ic: 290mV @ 100mA, 2A
Current - Collector Cutoff (Max): 1µA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce: 200 @ 100mA, 2V
Frequency - Transition: 380MHz
Supplier Device Package: PCP
Part Status: Obsolete
Current - Collector (Ic) (Max): 3 A
Voltage - Collector Emitter Breakdown (Max): 50 V
Power - Max: 1.3 W
товар відсутній
2SC5964-TD-H 2sa2125-d.pdf
2SC5964-TD-H
Виробник: onsemi
Description: TRANS NPN 50V 3A PCP
Packaging: Tape & Reel (TR)
Package / Case: TO-243AA
Mounting Type: Surface Mount
Transistor Type: NPN
Operating Temperature: 150°C (TJ)
Vce Saturation (Max) @ Ib, Ic: 290mV @ 100mA, 2A
Current - Collector Cutoff (Max): 1µA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce: 200 @ 100mA, 2V
Frequency - Transition: 380MHz
Supplier Device Package: PCP
Part Status: Active
Current - Collector (Ic) (Max): 3 A
Voltage - Collector Emitter Breakdown (Max): 50 V
Power - Max: 3.5 W
на замовлення 1000 шт:
термін постачання 21-31 дні (днів)
Кількість Ціна без ПДВ
1000+10.64 грн
Мінімальне замовлення: 1000
2SC6017-TL-EX
2SC6017-TL-EX
Виробник: onsemi
Description: TRANS NPN 50V 10A TPFA
Packaging: Tape & Reel (TR)
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Mounting Type: Surface Mount
Transistor Type: NPN
Vce Saturation (Max) @ Ib, Ic: 360mV @ 250mA, 5A
Current - Collector Cutoff (Max): 10µA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce: 200 @ 1A, 2V
Frequency - Transition: 200MHz
Supplier Device Package: TP-FA
Part Status: Obsolete
Current - Collector (Ic) (Max): 10 A
Voltage - Collector Emitter Breakdown (Max): 50 V
Power - Max: 950 mW
товар відсутній
2SC6082-1E ena0279-d.pdf
2SC6082-1E
Виробник: onsemi
Description: TRANS NPN 50V 15A TO220F-3SG
Packaging: Tube
Package / Case: TO-220-3 Full Pack
Mounting Type: Through Hole
Transistor Type: NPN
Operating Temperature: 150°C (TJ)
Vce Saturation (Max) @ Ib, Ic: 400mV @ 375mA, 7.5A
Current - Collector Cutoff (Max): 10µA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce: 200 @ 330mA, 2V
Frequency - Transition: 195MHz
Supplier Device Package: TO-220F-3SG
Part Status: Active
Current - Collector (Ic) (Max): 15 A
Voltage - Collector Emitter Breakdown (Max): 50 V
Power - Max: 2 W
товар відсутній
2SC6082-EPN-1E ena0279jp-d.pdf
2SC6082-EPN-1E
Виробник: onsemi
Description: TRANS NPN 50V 15A TO220F-3SG
Packaging: Tube
Package / Case: TO-220-3 Full Pack
Mounting Type: Through Hole
Transistor Type: NPN
Vce Saturation (Max) @ Ib, Ic: 400mV @ 375mA, 7.5A
Current - Collector Cutoff (Max): 10µA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce: 200 @ 330mA, 2V
Frequency - Transition: 195MHz
Supplier Device Package: TO-220F-3SG
Part Status: Active
Current - Collector (Ic) (Max): 15 A
Voltage - Collector Emitter Breakdown (Max): 50 V
Power - Max: 2 W
товар відсутній
2SD1060R-1EX en686-d.pdf
2SD1060R-1EX
Виробник: onsemi
Description: TRANS NPN 50V 5A TO220-3
Packaging: Tube
Package / Case: TO-220-3
Mounting Type: Through Hole
Transistor Type: NPN
Operating Temperature: 150°C (TJ)
Vce Saturation (Max) @ Ib, Ic: 300mV @ 300mA, 3A
Current - Collector Cutoff (Max): 100µA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce: 100 @ 1A, 2V
Frequency - Transition: 30MHz
Supplier Device Package: TO-220-3
Current - Collector (Ic) (Max): 5 A
Voltage - Collector Emitter Breakdown (Max): 50 V
Power - Max: 1.75 W
товар відсутній
2SD1060S-1E en686-d.pdf
2SD1060S-1E
Виробник: onsemi
Description: TRANS NPN 50V 5A TO220-3
Packaging: Tube
Package / Case: TO-220-3
Mounting Type: Through Hole
Transistor Type: NPN
Operating Temperature: 150°C (TJ)
Vce Saturation (Max) @ Ib, Ic: 300mV @ 300mA, 3A
Current - Collector Cutoff (Max): 100µA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce: 140 @ 1A, 2V
Frequency - Transition: 30MHz
Supplier Device Package: TO-220-3
Part Status: Active
Current - Collector (Ic) (Max): 5 A
Voltage - Collector Emitter Breakdown (Max): 50 V
Power - Max: 1.75 W
на замовлення 349 шт:
термін постачання 21-31 дні (днів)
Кількість Ціна без ПДВ
3+100.85 грн
50+ 78.26 грн
100+ 62.02 грн
Мінімальне замовлення: 3
2SJ652-1E
2SJ652-1E
Виробник: onsemi
Description: MOSFET P-CH 60V 28A TO220F-3SG
Packaging: Tube
Package / Case: TO-220-3 Full Pack
Mounting Type: Through Hole
Operating Temperature: 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: P-Channel
Current - Continuous Drain (Id) @ 25°C: 28A (Ta)
Rds On (Max) @ Id, Vgs: 38mOhm @ 14A, 10V
Power Dissipation (Max): 2W (Ta), 30W (Tc)
Supplier Device Package: TO-220F-3SG
Part Status: Obsolete
Drive Voltage (Max Rds On, Min Rds On): 4V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 60 V
Gate Charge (Qg) (Max) @ Vgs: 80 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 4360 pF @ 20 V
товар відсутній
2SK3703-1E
2SK3703-1E
Виробник: onsemi
Description: MOSFET N-CH 60V 30A TO220F-3SG
Packaging: Tube
Package / Case: TO-220-3 Full Pack
Mounting Type: Through Hole
Operating Temperature: 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 30A (Ta)
Rds On (Max) @ Id, Vgs: 26mOhm @ 15A, 10V
Power Dissipation (Max): 2W (Ta), 25W (Tc)
Supplier Device Package: TO-220F-3SG
Part Status: Obsolete
Drive Voltage (Max Rds On, Min Rds On): 4V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 60 V
Gate Charge (Qg) (Max) @ Vgs: 40 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 1780 pF @ 20 V
товар відсутній
2SK3707-1E
2SK3707-1E
Виробник: onsemi
Description: MOSFET N-CH 100V 20A TO220F-3SG
Packaging: Tube
Package / Case: TO-220-3 Full Pack
Mounting Type: Through Hole
Operating Temperature: 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 20A (Ta)
Rds On (Max) @ Id, Vgs: 60mOhm @ 10A, 10V
Power Dissipation (Max): 2W (Ta), 25W (Tc)
Supplier Device Package: TO-220F-3SG
Part Status: Obsolete
Drive Voltage (Max Rds On, Min Rds On): 4V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 100 V
Gate Charge (Qg) (Max) @ Vgs: 44 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 2150 pF @ 20 V
товар відсутній
2SK3738-TL-E 2SK3738.pdf
2SK3738-TL-E
Виробник: onsemi
Description: JFET N-CH 40V 1MA SMCP
Packaging: Tape & Reel (TR)
Package / Case: SC-75, SOT-416
Mounting Type: Surface Mount
Operating Temperature: 150°C (TJ)
FET Type: N-Channel
Input Capacitance (Ciss) (Max) @ Vds: 1.7pF @ 10V
Voltage - Breakdown (V(BR)GSS): 40 V
Current Drain (Id) - Max: 1 mA
Supplier Device Package: SMCP
Drain to Source Voltage (Vdss): 40 V
Power - Max: 100 mW
Voltage - Cutoff (VGS off) @ Id: 2.3 V @ 1 µA
Current - Drain (Idss) @ Vds (Vgs=0): 50 µA @ 10 V
товар відсутній
2SK3745LS-1E 2sk3745ls-d.pdf
2SK3745LS-1E
Виробник: onsemi
Description: MOSFET N-CH 1500V 2A TO220F-3FS
Packaging: Tube
Package / Case: TO-220-3 Full Pack
Mounting Type: Through Hole
Operating Temperature: 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 2A (Ta)
Rds On (Max) @ Id, Vgs: 13Ohm @ 1A, 10V
Power Dissipation (Max): 2W (Ta), 35W (Tc)
Supplier Device Package: TO-220F-3FS
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 1500 V
Gate Charge (Qg) (Max) @ Vgs: 37.5 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 380 pF @ 30 V
товар відсутній
2SK3746-1E 2sk3746-d.pdf
2SK3746-1E
Виробник: onsemi
Description: MOSFET N-CH 1500V 2A TO3P-3L
товар відсутній
2SK3747-1E 2sk3747-d.pdf
2SK3747-1E
Виробник: onsemi
Description: MOSFET N-CH 1500V 2A TO3PF-3
Packaging: Tube
Package / Case: SC-94
Mounting Type: Through Hole
Operating Temperature: 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 2A (Ta)
Rds On (Max) @ Id, Vgs: 13Ohm @ 1A, 10V
Power Dissipation (Max): 3W (Ta), 50W (Tc)
Supplier Device Package: TO-3PF-3
Part Status: Obsolete
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±35V
Drain to Source Voltage (Vdss): 1500 V
Gate Charge (Qg) (Max) @ Vgs: 37.5 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 380 pF @ 30 V
товар відсутній
2SK3748-1E 2SK3748.pdf
2SK3748-1E
Виробник: onsemi
Description: MOSFET N-CH 1500V 4A TO3PF-3
Packaging: Tube
Package / Case: SC-94
Mounting Type: Through Hole
Operating Temperature: 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 4A (Ta)
Rds On (Max) @ Id, Vgs: 7Ohm @ 2A, 10V
Power Dissipation (Max): 3W (Ta), 65W (Tc)
Supplier Device Package: TO-3PF-3
Part Status: Obsolete
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 1500 V
Gate Charge (Qg) (Max) @ Vgs: 80 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 790 pF @ 30 V
товар відсутній
2SK3820-DL-1E 2sk3820-d.pdf
2SK3820-DL-1E
Виробник: onsemi
Description: MOSFET N-CH 100V 26A TO263-2
Packaging: Tape & Reel (TR)
Package / Case: TO-263-3, D²Pak (2 Leads + Tab), TO-263AB
Mounting Type: Surface Mount
Operating Temperature: 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 26A (Ta)
Rds On (Max) @ Id, Vgs: 60mOhm @ 13A, 10V
Power Dissipation (Max): 1.65W (Ta), 50W (Tc)
Supplier Device Package: TO-263-2
Part Status: Obsolete
Drive Voltage (Max Rds On, Min Rds On): 4V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 100 V
Gate Charge (Qg) (Max) @ Vgs: 44 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 2150 pF @ 20 V
товар відсутній
2SK4066-1E ONSMS35711-1.pdf?t.download=true&u=5oefqw
2SK4066-1E
Виробник: onsemi
Description: MOSFET N-CH 60V 100A TO262-3
Packaging: Tube
Package / Case: TO-262-3 Long Leads, I²Pak, TO-262AA
Mounting Type: Through Hole
Operating Temperature: 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 100A (Ta)
Rds On (Max) @ Id, Vgs: 4.7mOhm @ 50A, 10V
Power Dissipation (Max): 1.65W (Ta), 90W (Tc)
Supplier Device Package: TO-262-3
Part Status: Obsolete
Drive Voltage (Max Rds On, Min Rds On): 4V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 60 V
Gate Charge (Qg) (Max) @ Vgs: 220 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 12500 pF @ 20 V
товар відсутній
2SK4066-DL-1E ONSMS35711-1.pdf?t.download=true&u=5oefqw
2SK4066-DL-1E
Виробник: onsemi
Description: MOSFET N-CH 60V 100A TO263-2
Packaging: Tape & Reel (TR)
Package / Case: TO-263-3, D²Pak (2 Leads + Tab), TO-263AB
Mounting Type: Surface Mount
Operating Temperature: 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 100A (Ta)
Rds On (Max) @ Id, Vgs: 4.7mOhm @ 50A, 10V
Power Dissipation (Max): 1.65W (Ta), 90W (Tc)
Supplier Device Package: TO-263-2
Part Status: Obsolete
Drive Voltage (Max Rds On, Min Rds On): 4V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 60 V
Gate Charge (Qg) (Max) @ Vgs: 220 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 12500 pF @ 20 V
товар відсутній
2SK4087LS-1E
2SK4087LS-1E
Виробник: onsemi
Description: MOSFET N-CH 600V 9.2A TO220F-3FS
Packaging: Tube
Package / Case: TO-220-3 Full Pack
Mounting Type: Through Hole
Operating Temperature: 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 9.2A (Tc)
Rds On (Max) @ Id, Vgs: 610mOhm @ 7A, 10V
Power Dissipation (Max): 2W (Ta), 40W (Tc)
Supplier Device Package: TO-220F-3FS
Part Status: Obsolete
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±30V
Drain to Source Voltage (Vdss): 600 V
Gate Charge (Qg) (Max) @ Vgs: 46 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 1200 pF @ 30 V
товар відсутній
2SK4088LS-1E 2SK4088LS_May2013.pdf
2SK4088LS-1E
Виробник: onsemi
Description: MOSFET N-CH 650V 7.5A TO220F-3FS
Packaging: Tube
Package / Case: TO-220-3 Full Pack
Mounting Type: Through Hole
Operating Temperature: 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 7.5A (Tc)
Rds On (Max) @ Id, Vgs: 850mOhm @ 5.5A, 10V
Power Dissipation (Max): 2W (Ta), 37W (Tc)
Supplier Device Package: TO-220F-3FS
Part Status: Obsolete
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±30V
Drain to Source Voltage (Vdss): 650 V
Gate Charge (Qg) (Max) @ Vgs: 37.6 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 1000 pF @ 30 V
товар відсутній
2SK4099LS-1E
2SK4099LS-1E
Виробник: onsemi
Description: MOSFET N-CH 600V 6.9A TO220F-3FS
Packaging: Tube
Package / Case: TO-220-3 Full Pack
Mounting Type: Through Hole
Operating Temperature: 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 6.9A (Tc)
Rds On (Max) @ Id, Vgs: 940mOhm @ 4A, 10V
Power Dissipation (Max): 2W (Ta), 35W (Tc)
Supplier Device Package: TO-220F-3FS
Part Status: Obsolete
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±30V
Drain to Source Voltage (Vdss): 600 V
Gate Charge (Qg) (Max) @ Vgs: 29 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 750 pF @ 30 V
товар відсутній
2SK4124-1E
2SK4124-1E
Виробник: onsemi
Description: MOSFET N-CH 500V 20A TO3P-3L
Packaging: Tube
Package / Case: TO-3P-3, SC-65-3
Mounting Type: Through Hole
Operating Temperature: 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 20A (Ta)
Rds On (Max) @ Id, Vgs: 430mOhm @ 8A, 10V
Power Dissipation (Max): 2.5W (Ta), 170W (Tc)
Supplier Device Package: TO-3P-3L
Part Status: Obsolete
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±30V
Drain to Source Voltage (Vdss): 500 V
Gate Charge (Qg) (Max) @ Vgs: 46.6 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 1200 pF @ 30 V
товар відсутній
2SK4125-1E
2SK4125-1E
Виробник: onsemi
Description: MOSFET N-CH 600V 17A TO3P-3L
Packaging: Tube
Package / Case: TO-3P-3, SC-65-3
Mounting Type: Through Hole
Operating Temperature: 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 17A (Ta)
Rds On (Max) @ Id, Vgs: 610mOhm @ 7A, 10V
Power Dissipation (Max): 2.5W (Ta), 170W (Tc)
Supplier Device Package: TO-3P-3L
Part Status: Obsolete
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±30V
Drain to Source Voltage (Vdss): 600 V
Gate Charge (Qg) (Max) @ Vgs: 46 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 1200 pF @ 30 V
товар відсутній
2SK4177-DL-1E ena0869-d.pdf
2SK4177-DL-1E
Виробник: onsemi
Description: MOSFET N-CH 1500V 2A TO263-2
Packaging: Tape & Reel (TR)
Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
Mounting Type: Surface Mount
Operating Temperature: 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 2A (Ta)
Rds On (Max) @ Id, Vgs: 13Ohm @ 1A, 10V
Power Dissipation (Max): 80W (Tc)
Supplier Device Package: TO-263-2
Part Status: Obsolete
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 1500 V
Gate Charge (Qg) (Max) @ Vgs: 37.5 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 380 pF @ 30 V
товар відсутній
2SK536-MTK-TB-E
2SK536-MTK-TB-E
Виробник: onsemi
Description: MOSFET N-CH 50V 0.1A 3CP
Packaging: Tape & Reel (TR)
Package / Case: TO-236-3, SC-59, SOT-23-3
Mounting Type: Surface Mount
Operating Temperature: 125°C (TJ)
Current - Continuous Drain (Id) @ 25°C: 100mA (Tj)
Supplier Device Package: 3-CP
Part Status: Obsolete
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±12V
товар відсутній
2SK596S-A 2SK596S_Rev_Aug2013.pdf
2SK596S-A
Виробник: onsemi
Description: JFET N-CH 1MA 3SPA
Packaging: Bag
Package / Case: SC-72
Mounting Type: Through Hole
Operating Temperature: 150°C (TJ)
FET Type: N-Channel
Input Capacitance (Ciss) (Max) @ Vds: 4.1pF @ 5V
Current Drain (Id) - Max: 1 mA
Supplier Device Package: 3-SPA
Part Status: Obsolete
Power - Max: 100 mW
Voltage - Cutoff (VGS off) @ Id: 500 mV @ 1 µA
Current - Drain (Idss) @ Vds (Vgs=0): 100 µA @ 5 V
Current Coupled to Voltage - Cutoff (VGS off) @ Id: 1
Voltage Coupled to Current - Drain (Idss) @ Vds (Vgs=0): 5
товар відсутній
2SK596S-C
2SK596S-C
Виробник: onsemi
Description: JFET N-CH 1MA 3SPA
Packaging: Bag
Package / Case: SC-72
Mounting Type: Through Hole
Operating Temperature: 150°C (TJ)
FET Type: N-Channel
Input Capacitance (Ciss) (Max) @ Vds: 4.1pF @ 5V
Current Drain (Id) - Max: 1 mA
Supplier Device Package: 3-SPA
Part Status: Obsolete
Power - Max: 100 mW
Voltage - Cutoff (VGS off) @ Id: 500 mV @ 1 µA
Current - Drain (Idss) @ Vds (Vgs=0): 210 µA @ 5 V
Current Coupled to Voltage - Cutoff (VGS off) @ Id: 1
Voltage Coupled to Current - Drain (Idss) @ Vds (Vgs=0): 5
товар відсутній
3LN01S-K-TL-E
3LN01S-K-TL-E
Виробник: onsemi
Description: MOSFET N-CH 30V 0.15A SMCP
товар відсутній
3SK263-5-TG-E 3SK263.pdf
3SK263-5-TG-E
Виробник: onsemi
Description: FET RF 15V 200MHZ CP4
Packaging: Tape & Reel (TR)
Package / Case: TO-253-4, TO-253AA
Current Rating (Amps): 30mA
Mounting Type: Surface Mount
Frequency: 200MHz
Configuration: N-Channel Dual Gate
Gain: 21dB
Technology: MOSFET
Noise Figure: 2.2dB
Supplier Device Package: 4-CP
Part Status: Obsolete
Voltage - Rated: 15 V
Voltage - Test: 6 V
Current - Test: 10 mA
товар відсутній
5LN01SP mosfets?documentNotFound=3&documentId=77736
5LN01SP
Виробник: onsemi
Description: MOSFET N-CH 50V 100MA 3SPA
товар відсутній
5LP01SP mosfets?documentNotFound=3&documentId=1000629
5LP01SP
Виробник: onsemi
Description: MOSFET P-CH 50V 70MA 3SPA
товар відсутній
5LP01SP-AC mosfets?documentNotFound=3&documentId=1000629
5LP01SP-AC
Виробник: onsemi
Description: MOSFET P-CH 50V 70MA 3SPA
товар відсутній
ATP304-TL-H
ATP304-TL-H
Виробник: onsemi
Description: MOSFET P-CH 60V 100A ATPAK
Packaging: Tape & Reel (TR)
Package / Case: ATPAK (2 leads+tab)
Mounting Type: Surface Mount
Operating Temperature: 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: P-Channel
Current - Continuous Drain (Id) @ 25°C: 100A (Ta)
Rds On (Max) @ Id, Vgs: 6.5mOhm @ 50A, 10V
Power Dissipation (Max): 90W (Tc)
Supplier Device Package: ATPAK
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 60 V
Gate Charge (Qg) (Max) @ Vgs: 250 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 13000 pF @ 20 V
товар відсутній
ATP401-TL-H ena2167-d.pdf
ATP401-TL-H
Виробник: onsemi
Description: MOSFET N-CH 60V 100A ATPAK
товар відсутній
ATP404-H-TL-H
ATP404-H-TL-H
Виробник: onsemi
Description: MOSFET N-CH 60V 95A ATPAK
Packaging: Tape & Reel (TR)
Package / Case: ATPAK (2 leads+tab)
Mounting Type: Surface Mount
Operating Temperature: 150°C (TJ)
Current - Continuous Drain (Id) @ 25°C: 95A (Tj)
Supplier Device Package: ATPAK
Part Status: Obsolete
товар відсутній
BAS16P2T5G bas16p2-d.pdf
BAS16P2T5G
Виробник: onsemi
Description: DIODE GEN PURP 100V 200MA SOD923
Packaging: Tape & Reel (TR)
Package / Case: SOD-923
Mounting Type: Surface Mount
Speed: Small Signal =< 200mA (Io), Any Speed
Reverse Recovery Time (trr): 6 ns
Technology: Standard
Capacitance @ Vr, F: 2pF @ 0V, 1MHz
Current - Average Rectified (Io): 200mA
Supplier Device Package: SOD-923
Operating Temperature - Junction: -55°C ~ 150°C
Part Status: Active
Voltage - DC Reverse (Vr) (Max): 100 V
Voltage - Forward (Vf) (Max) @ If: 1.25 V @ 150 mA
Current - Reverse Leakage @ Vr: 100 µA @ 100 V
на замовлення 176000 шт:
термін постачання 21-31 дні (днів)
Кількість Ціна без ПДВ
8000+2.42 грн
16000+ 1.94 грн
24000+ 1.9 грн
56000+ 1.6 грн
Мінімальне замовлення: 8000
BAV23CLT3G bav23clt1-d.pdf
BAV23CLT3G
Виробник: onsemi
Description: DIODE ARRAY GP 250V 400MA SOT23
Packaging: Tape & Reel (TR)
Package / Case: TO-236-3, SC-59, SOT-23-3
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 150 ns
Technology: Standard
Diode Configuration: 1 Pair Common Cathode
Current - Average Rectified (Io) (per Diode): 400mA (DC)
Supplier Device Package: SOT-23-3 (TO-236)
Operating Temperature - Junction: -55°C ~ 150°C
Part Status: Obsolete
Voltage - DC Reverse (Vr) (Max): 250 V
Voltage - Forward (Vf) (Max) @ If: 1.25 V @ 200 mA
Current - Reverse Leakage @ Vr: 100 nA @ 250 V
товар відсутній
BBS3002-DL-1E
BBS3002-DL-1E
Виробник: onsemi
Description: MOSFET P-CH 60V 100A D2PAK
Packaging: Tape & Reel (TR)
Package / Case: TO-263-3, D²Pak (2 Leads + Tab), TO-263AB
Mounting Type: Surface Mount
Operating Temperature: 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: P-Channel
Current - Continuous Drain (Id) @ 25°C: 100A (Ta)
Rds On (Max) @ Id, Vgs: 5.8mOhm @ 50A, 10V
Power Dissipation (Max): 90W (Tc)
Supplier Device Package: D²PAK (TO-263)
Drive Voltage (Max Rds On, Min Rds On): 4V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 60 V
Gate Charge (Qg) (Max) @ Vgs: 280 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 13200 pF @ 20 V
товар відсутній
BBS3002-TL-1E
BBS3002-TL-1E
Виробник: onsemi
Description: MOSFET P-CH 60V 100A D2PAK
Packaging: Tape & Reel (TR)
Package / Case: TO-263-3, D²Pak (2 Leads + Tab), TO-263AB
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: P-Channel
Current - Continuous Drain (Id) @ 25°C: 100A (Ta)
Rds On (Max) @ Id, Vgs: 5.8mOhm @ 50A, 10V
Power Dissipation (Max): 90W (Tc)
Supplier Device Package: D²PAK (TO-263)
Drive Voltage (Max Rds On, Min Rds On): 4V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 60 V
Gate Charge (Qg) (Max) @ Vgs: 280 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 13200 pF @ 20 V
товар відсутній
BC337-25RLRAG
BC337-25RLRAG
Виробник: onsemi
Description: TRANS NPN 45V 0.8A TO92
Packaging: Tape & Reel (TR)
Package / Case: TO-226-3, TO-92-3 Long Body (Formed Leads)
Mounting Type: Through Hole
Transistor Type: NPN
Operating Temperature: -55°C ~ 150°C (TJ)
Vce Saturation (Max) @ Ib, Ic: 700mV @ 50mA, 500mA
Current - Collector Cutoff (Max): 100nA
DC Current Gain (hFE) (Min) @ Ic, Vce: 160 @ 100mA, 1V
Frequency - Transition: 210MHz
Supplier Device Package: TO-92 (TO-226)
Part Status: Obsolete
Current - Collector (Ic) (Max): 800 mA
Voltage - Collector Emitter Breakdown (Max): 45 V
Power - Max: 625 mW
товар відсутній
BD135TG bd135-d.pdf
BD135TG
Виробник: onsemi
Description: TRANS NPN 45V 1.5A TO126
Packaging: Tube
Package / Case: TO-225AA, TO-126-3
Mounting Type: Through Hole
Transistor Type: NPN
Operating Temperature: -55°C ~ 150°C (TJ)
Vce Saturation (Max) @ Ib, Ic: 500mV @ 50mA, 500mA
Current - Collector Cutoff (Max): 100nA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce: 40 @ 150mA, 2V
Supplier Device Package: TO-126
Part Status: Active
Current - Collector (Ic) (Max): 1.5 A
Voltage - Collector Emitter Breakdown (Max): 45 V
Power - Max: 1.25 W
на замовлення 307 шт:
термін постачання 21-31 дні (днів)
Кількість Ціна без ПДВ
6+51.87 грн
50+ 41.22 грн
100+ 29.91 грн
Мінімальне замовлення: 6
BD438TG bd438-d.pdf
BD438TG
Виробник: onsemi
Description: TRANS PNP 45V 4A
Packaging: Tube
Package / Case: TO-225AA, TO-126-3
Mounting Type: Through Hole
Transistor Type: PNP
Operating Temperature: -55°C ~ 150°C (TJ)
Vce Saturation (Max) @ Ib, Ic: 700mV @ 300mA, 3A
Current - Collector Cutoff (Max): 100µA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce: 85 @ 500mA, 1V
Frequency - Transition: 3MHz
Supplier Device Package: TO-126
Part Status: Active
Current - Collector (Ic) (Max): 4 A
Voltage - Collector Emitter Breakdown (Max): 45 V
Power - Max: 36 W
товар відсутній
BFL4007-1E
BFL4007-1E
Виробник: onsemi
Description: MOSFET N-CH 600V 8.7A TO220F-3FS
Packaging: Tube
Package / Case: TO-220-3 Full Pack
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 8.7A (Tc)
Rds On (Max) @ Id, Vgs: 680mOhm @ 7A, 10V
Power Dissipation (Max): 2W (Ta), 40W (Tc)
Supplier Device Package: TO-220F-3FS
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±30V
Drain to Source Voltage (Vdss): 600 V
Gate Charge (Qg) (Max) @ Vgs: 46 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 1200 pF @ 30 V
товар відсутній
BFL4026-1E bfl4026-d.pdf
BFL4026-1E
Виробник: onsemi
Description: MOSFET N-CH 900V 3.5A TO220F-3FS
Packaging: Tube
Package / Case: TO-220-3 Full Pack
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 3.5A (Tc)
Rds On (Max) @ Id, Vgs: 3.6Ohm @ 2.5A, 10V
Power Dissipation (Max): 2W (Ta), 35W (Tc)
Supplier Device Package: TO-220F-3FS
Part Status: Obsolete
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±30V
Drain to Source Voltage (Vdss): 900 V
Gate Charge (Qg) (Max) @ Vgs: 33 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 650 pF @ 30 V
товар відсутній
BFL4037-1E
BFL4037-1E
Виробник: onsemi
Description: MOSFET N-CH 500V 11A TO220F-3FS
Packaging: Tube
Package / Case: TO-220-3 Full Pack
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 11A (Tc)
Rds On (Max) @ Id, Vgs: 430mOhm @ 8A, 10V
Power Dissipation (Max): 2W (Ta), 40W (Tc)
Supplier Device Package: TO-220F-3FS
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±30V
Drain to Source Voltage (Vdss): 500 V
Gate Charge (Qg) (Max) @ Vgs: 48.6 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 1200 pF @ 30 V
товар відсутній
BMS3003-1E ena1907-d.pdf
BMS3003-1E
Виробник: onsemi
Description: MOSFET P-CH 60V 78A TO220F-3SG
Packaging: Tube
Package / Case: TO-220-3 Full Pack
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: P-Channel
Current - Continuous Drain (Id) @ 25°C: 78A (Ta)
Rds On (Max) @ Id, Vgs: 6.5mOhm @ 39A, 10V
Power Dissipation (Max): 2W (Ta), 40W (Tc)
Supplier Device Package: TO-220F-3SG
Part Status: Obsolete
Drive Voltage (Max Rds On, Min Rds On): 4V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 60 V
Gate Charge (Qg) (Max) @ Vgs: 285 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 13200 pF @ 20 V
товар відсутній
BMS3004-1E ena1908-d.pdf
BMS3004-1E
Виробник: onsemi
Description: MOSFET P-CH 75V 68A TO220F-3SG
Packaging: Tube
Package / Case: TO-220-3 Full Pack
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: P-Channel
Current - Continuous Drain (Id) @ 25°C: 68A (Ta)
Rds On (Max) @ Id, Vgs: 8.5mOhm @ 34A, 10V
Power Dissipation (Max): 2W (Ta), 40W (Tc)
Supplier Device Package: TO-220F-3SG
Part Status: Obsolete
Drive Voltage (Max Rds On, Min Rds On): 4V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 75 V
Gate Charge (Qg) (Max) @ Vgs: 300 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 13400 pF @ 20 V
товар відсутній
CAT24C04C5ATR cat24c01-d.pdf
CAT24C04C5ATR
Виробник: onsemi
Description: IC EEPROM 4KBIT I2C 5WLCSP
Packaging: Tape & Reel (TR)
Package / Case: 5-XFBGA, WLCSP
Mounting Type: Surface Mount
Memory Size: 4Kbit
Memory Type: Non-Volatile
Operating Temperature: -40°C ~ 85°C (TA)
Voltage - Supply: 1.7V ~ 5.5V
Technology: EEPROM
Clock Frequency: 400 kHz
Memory Format: EEPROM
Supplier Device Package: 5-WLCSP (0.86x0.84)
Write Cycle Time - Word, Page: 5ms
Memory Interface: I2C
Access Time: 900 ns
Memory Organization: 512 x 8
DigiKey Programmable: Not Verified
товар відсутній
CAT24C512YIGT3JN cat24c512-d.pdf
CAT24C512YIGT3JN
Виробник: onsemi
Description: IC EEPROM 512KBIT I2C 8TSSOP
Packaging: Tape & Reel (TR)
Package / Case: 8-TSSOP (0.173", 4.40mm Width)
Mounting Type: Surface Mount
Memory Size: 512Kbit
Memory Type: Non-Volatile
Operating Temperature: -40°C ~ 85°C (TA)
Voltage - Supply: 1.8V ~ 5.5V
Technology: EEPROM
Clock Frequency: 1 MHz
Memory Format: EEPROM
Supplier Device Package: 8-TSSOP
Write Cycle Time - Word, Page: 5ms
Memory Interface: I2C
Access Time: 900 ns
Memory Organization: 64K x 8
DigiKey Programmable: Not Verified
товар відсутній
CAT25256HU4I-GT3 cat25256-d.pdf
CAT25256HU4I-GT3
Виробник: onsemi
Description: IC EEPROM 256KBIT SPI 8UDFN
Packaging: Tape & Reel (TR)
Package / Case: 8-UFDFN Exposed Pad
Mounting Type: Surface Mount
Memory Size: 256Kbit
Memory Type: Non-Volatile
Operating Temperature: -40°C ~ 85°C (TA)
Voltage - Supply: 1.8V ~ 5.5V
Technology: EEPROM
Clock Frequency: 10 MHz
Memory Format: EEPROM
Supplier Device Package: 8-UDFN-EP (2x3)
Part Status: Active
Write Cycle Time - Word, Page: 5ms
Memory Interface: SPI
Memory Organization: 32K x 8
DigiKey Programmable: Not Verified
на замовлення 9000 шт:
термін постачання 21-31 дні (днів)
Кількість Ціна без ПДВ
3000+35.52 грн
6000+ 33.09 грн
Мінімальне замовлення: 3000
CAT25M01LI-G
CAT25M01LI-G
Виробник: onsemi
Description: IC EEPROM 1MBIT SPI 10MHZ 8DIP
Packaging: Tube
Package / Case: 8-DIP (0.300", 7.62mm)
Mounting Type: Through Hole
Memory Size: 1Mbit
Memory Type: Non-Volatile
Operating Temperature: -40°C ~ 85°C (TA)
Voltage - Supply: 1.8V ~ 5.5V
Technology: EEPROM
Clock Frequency: 10 MHz
Memory Format: EEPROM
Supplier Device Package: 8-PDIP
Write Cycle Time - Word, Page: 5ms
Memory Interface: SPI
Memory Organization: 128K x 8
DigiKey Programmable: Not Verified
товар відсутній
CAT25M01VI-G cat25m01-d.pdf
CAT25M01VI-G
Виробник: onsemi
Description: IC EEPROM 1MBIT SPI 10MHZ 8SOIC
Packaging: Tube
Package / Case: 8-SOIC (0.154", 3.90mm Width)
Mounting Type: Surface Mount
Memory Size: 1Mbit
Memory Type: Non-Volatile
Operating Temperature: -40°C ~ 85°C (TA)
Voltage - Supply: 1.8V ~ 5.5V
Technology: EEPROM
Clock Frequency: 10 MHz
Memory Format: EEPROM
Supplier Device Package: 8-SOIC
Write Cycle Time - Word, Page: 5ms
Memory Interface: SPI
Memory Organization: 128K x 8
DigiKey Programmable: Not Verified
товар відсутній
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