| Фото | Назва | Виробник | Інформація | Доступність | Ціна без ПДВ | ||||||||||||||||
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FCH072N60F | onsemi |
Description: MOSFET N-CH 600V 52A TO247-3Packaging: Tube Package / Case: TO-247-3 Mounting Type: Through Hole Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 52A (Tc) Rds On (Max) @ Id, Vgs: 72mOhm @ 26A, 10V Power Dissipation (Max): 481W (Tc) Vgs(th) (Max) @ Id: 5V @ 250µA Supplier Device Package: TO-247-3 Part Status: Not For New Designs Drive Voltage (Max Rds On, Min Rds On): 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 600 V Gate Charge (Qg) (Max) @ Vgs: 215 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 8660 pF @ 100 V |
на замовлення 41349 шт: термін постачання 21-31 дні (днів) |
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FDMS3669S | onsemi |
Description: MOSFET 2N-CH 30V 13A/18A POWER56Supplier Device Package: Power56 Vgs(th) (Max) @ Id: 2.7V @ 250µA FET Feature: Logic Level Gate Gate Charge (Qg) (Max) @ Vgs: 24nC @ 10V Rds On (Max) @ Id, Vgs: 10mOhm @ 13A, 10V Input Capacitance (Ciss) (Max) @ Vds: 1605pF @ 15V Current - Continuous Drain (Id) @ 25°C: 13A, 18A Drain to Source Voltage (Vdss): 30V Power - Max: 1W Technology: MOSFET (Metal Oxide) Operating Temperature: -55°C ~ 150°C (TJ) Configuration: 2 N-Channel (Dual) Asymmetrical Mounting Type: Surface Mount Package / Case: 8-PowerTDFN Packaging: Tape & Reel (TR) |
товару немає в наявності |
Мінімальне замовлення: 3000 шт В кошику од. на суму грн. | ||||||||||||||||
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FDN537N | onsemi |
Description: MOSFET N-CH 30V 6.5A SUPERSOT3Input Capacitance (Ciss) (Max) @ Vds: 465 pF @ 15 V Gate Charge (Qg) (Max) @ Vgs: 8.4 nC @ 10 V Drain to Source Voltage (Vdss): 30 V Vgs (Max): ±20V Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Part Status: Active Supplier Device Package: SOT-23-3 Vgs(th) (Max) @ Id: 3V @ 250µA Power Dissipation (Max): 1.5W (Ta) Rds On (Max) @ Id, Vgs: 23mOhm @ 6.5A, 10V Current - Continuous Drain (Id) @ 25°C: 6.5A (Ta), 6.5A (Tc) FET Type: N-Channel Technology: MOSFET (Metal Oxide) Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Surface Mount Package / Case: TO-236-3, SC-59, SOT-23-3 Packaging: Tape & Reel (TR) |
на замовлення 60000 шт: термін постачання 21-31 дні (днів) |
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FDB9406-F085 | onsemi |
Description: MOSFET N-CH 40V 110A D2PAKQualification: AEC-Q101 Grade: Automotive FET Type: N-Channel Input Capacitance (Ciss) (Max) @ Vds: 7710 pF @ 25 V Gate Charge (Qg) (Max) @ Vgs: 138 nC @ 10 V Drain to Source Voltage (Vdss): 40 V Vgs (Max): ±20V Drive Voltage (Max Rds On, Min Rds On): 10V Part Status: Active Supplier Device Package: TO-263 (D2Pak) Vgs(th) (Max) @ Id: 4V @ 250µA Power Dissipation (Max): 176W (Tj) Rds On (Max) @ Id, Vgs: 1.8mOhm @ 80A, 10V Current - Continuous Drain (Id) @ 25°C: 110A (Tc) Technology: MOSFET (Metal Oxide) Operating Temperature: -55°C ~ 175°C (TJ) Mounting Type: Surface Mount Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB Packaging: Tape & Reel (TR) |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||||||||||
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FAN53541UCX | onsemi |
Description: IC REG BUCK ADJ 5A 20WLCSP |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||||||||||
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FDMS3669S | onsemi |
Description: MOSFET 2N-CH 30V 13A/18A POWER56Supplier Device Package: Power56 Vgs(th) (Max) @ Id: 2.7V @ 250µA FET Feature: Logic Level Gate Gate Charge (Qg) (Max) @ Vgs: 24nC @ 10V Rds On (Max) @ Id, Vgs: 10mOhm @ 13A, 10V Input Capacitance (Ciss) (Max) @ Vds: 1605pF @ 15V Current - Continuous Drain (Id) @ 25°C: 13A, 18A Drain to Source Voltage (Vdss): 30V Power - Max: 1W Technology: MOSFET (Metal Oxide) Operating Temperature: -55°C ~ 150°C (TJ) Configuration: 2 N-Channel (Dual) Asymmetrical Mounting Type: Surface Mount Package / Case: 8-PowerTDFN Packaging: Cut Tape (CT) |
на замовлення 6169 шт: термін постачання 21-31 дні (днів) |
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FDN537N | onsemi |
Description: MOSFET N-CH 30V 6.5A SUPERSOT3Input Capacitance (Ciss) (Max) @ Vds: 465 pF @ 15 V Gate Charge (Qg) (Max) @ Vgs: 8.4 nC @ 10 V Drain to Source Voltage (Vdss): 30 V Vgs (Max): ±20V Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Part Status: Active Supplier Device Package: SOT-23-3 Vgs(th) (Max) @ Id: 3V @ 250µA Power Dissipation (Max): 1.5W (Ta) Rds On (Max) @ Id, Vgs: 23mOhm @ 6.5A, 10V Current - Continuous Drain (Id) @ 25°C: 6.5A (Ta), 6.5A (Tc) FET Type: N-Channel Technology: MOSFET (Metal Oxide) Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Surface Mount Package / Case: TO-236-3, SC-59, SOT-23-3 Packaging: Cut Tape (CT) |
на замовлення 60133 шт: термін постачання 21-31 дні (днів) |
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FTCO3V455A1 | onsemi |
Description: MOSFET 6N-CH 40V 150A MODULESupplier Device Package: Module FET Feature: Logic Level Gate Rds On (Max) @ Id, Vgs: 1.66mOhm @ 80A, 10V Current - Continuous Drain (Id) @ 25°C: 150A Drain to Source Voltage (Vdss): 40V Power - Max: 115W Technology: MOSFET (Metal Oxide) Operating Temperature: 175°C (TJ) Configuration: 6 N-Channel (3-Phase Bridge) Mounting Type: Through Hole Package / Case: 19-PowerDIP Module Packaging: Tube |
товару немає в наявності |
Мінімальне замовлення: 44 шт В кошику од. на суму грн. | ||||||||||||||||
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FDPC8012S | onsemi |
Description: MOSFET 2N-CH 25V 13A PWRCLIP-33Packaging: Cut Tape (CT) Package / Case: 8-PowerWDFN Mounting Type: Surface Mount Configuration: 2 N-Channel (Dual) Asymmetrical Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) Power - Max: 800mW, 900mW Drain to Source Voltage (Vdss): 25V Current - Continuous Drain (Id) @ 25°C: 13A, 26A Input Capacitance (Ciss) (Max) @ Vds: 1075pF @ 13V Rds On (Max) @ Id, Vgs: 7mOhm @ 12A, 4.5V Gate Charge (Qg) (Max) @ Vgs: 8nC @ 4.5V FET Feature: Logic Level Gate Vgs(th) (Max) @ Id: 2.2V @ 250µA Supplier Device Package: Powerclip-33 Part Status: Active |
на замовлення 2947 шт: термін постачання 21-31 дні (днів) |
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FAN3240TMX | onsemi |
Description: IC PWR DRIVER N-CHAN 1:1 8SOICFault Protection: Over Temperature, UVLO Supplier Device Package: 8-SOIC Ratio - Input:Output: 1:1 Voltage - Supply (Vcc/Vdd): Not Required Voltage - Load: 8V ~ 60V Input Type: Non-Inverting Rds On (Typ): 1Ohm Output Configuration: Low Side Operating Temperature: -40°C ~ 105°C (TA) Switch Type: Latched Driver Interface: On/Off Number of Outputs: 2 Mounting Type: Surface Mount Output Type: N-Channel Package / Case: 8-SOIC (0.154", 3.90mm Width) Packaging: Cut Tape (CT) |
на замовлення 47216 шт: термін постачання 21-31 дні (днів) |
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FAN3241TMX | onsemi |
Description: IC PWR DRIVER N-CHAN 1:1 8SOICPart Status: Active Fault Protection: Over Temperature, UVLO Supplier Device Package: 8-SOIC Ratio - Input:Output: 1:1 Voltage - Supply (Vcc/Vdd): Not Required Voltage - Load: 8V ~ 60V Input Type: Non-Inverting Rds On (Typ): 1Ohm Output Configuration: Low Side Operating Temperature: -40°C ~ 105°C (TA) Switch Type: Latched Driver Interface: On/Off Number of Outputs: 2 Mounting Type: Surface Mount Output Type: N-Channel Package / Case: 8-SOIC (0.154", 3.90mm Width) Packaging: Cut Tape (CT) |
на замовлення 2485 шт: термін постачання 21-31 дні (днів) |
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NCL30160GEVB | onsemi |
Description: EVAL BOARD FOR NCL30160Contents: Board(s) Part Status: Active Outputs and Type: 1 Non-Isolated Output Supplied Contents: Board(s) Utilized IC / Part: NCL30160 Current - Output / Channel: 1A Voltage - Input: 6.3V ~ 40V Features: Dimmable Packaging: Bulk |
на замовлення 1 шт: термін постачання 21-31 дні (днів) |
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1N4148-T50R | onsemi |
Description: DIODE STANDARD 100V 200MA DO35Packaging: Cut Tape (CT) Package / Case: DO-204AH, DO-35, Axial Mounting Type: Through Hole Speed: Small Signal =< 200mA (Io), Any Speed Reverse Recovery Time (trr): 4 ns Technology: Standard Capacitance @ Vr, F: 4pF @ 0V, 1MHz Current - Average Rectified (Io): 200mA Supplier Device Package: DO-35 Operating Temperature - Junction: -55°C ~ 175°C Part Status: Active Voltage - DC Reverse (Vr) (Max): 100 V Voltage - Forward (Vf) (Max) @ If: 1 V @ 10 mA Current - Reverse Leakage @ Vr: 5 µA @ 75 V |
на замовлення 34977 шт: термін постачання 21-31 дні (днів) |
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4N32SR2M | onsemi |
Description: OPTOISO 4.17KV DARL W/BASE 6-SMDPackaging: Cut Tape (CT) Package / Case: 6-SMD, Gull Wing Output Type: Darlington with Base Mounting Type: Surface Mount Operating Temperature: -40°C ~ 100°C Voltage - Forward (Vf) (Typ): 1.2V Input Type: DC Current - Output / Channel: 150mA Voltage - Isolation: 4170Vrms Current Transfer Ratio (Min): 500% @ 10mA Vce Saturation (Max): 1V Supplier Device Package: 6-SMD Voltage - Output (Max): 30V Turn On / Turn Off Time (Typ): 5µs, 100µs (Max) Part Status: Active Number of Channels: 1 Current - DC Forward (If) (Max): 80 mA |
на замовлення 11788 шт: термін постачання 21-31 дні (днів) |
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BC516-D27Z | onsemi |
Description: TRANS PNP DARL 30V 1A TO-92-3Packaging: Cut Tape (CT) Package / Case: TO-226-3, TO-92-3 (TO-226AA) Formed Leads Mounting Type: Through Hole Transistor Type: PNP - Darlington Operating Temperature: -55°C ~ 150°C (TJ) Vce Saturation (Max) @ Ib, Ic: 1V @ 100µA, 100mA Current - Collector Cutoff (Max): 100nA (ICBO) DC Current Gain (hFE) (Min) @ Ic, Vce: 30000 @ 20mA, 2V Frequency - Transition: 200MHz Supplier Device Package: TO-92-3 Part Status: Active Current - Collector (Ic) (Max): 1 A Voltage - Collector Emitter Breakdown (Max): 30 V Power - Max: 625 mW |
на замовлення 5264 шт: термін постачання 21-31 дні (днів) |
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FDD2670 | onsemi |
Description: MOSFET N-CH 200V 3.6A TO252Technology: MOSFET (Metal Oxide) Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Surface Mount Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63 Packaging: Cut Tape (CT) Input Capacitance (Ciss) (Max) @ Vds: 1228 pF @ 100 V Gate Charge (Qg) (Max) @ Vgs: 43 nC @ 10 V Drain to Source Voltage (Vdss): 200 V Vgs (Max): ±20V Drive Voltage (Max Rds On, Min Rds On): 10V Supplier Device Package: TO-252AA Vgs(th) (Max) @ Id: 4.5V @ 250µA Power Dissipation (Max): 3.2W (Ta), 70W (Tc) Rds On (Max) @ Id, Vgs: 130mOhm @ 3.6A, 10V Current - Continuous Drain (Id) @ 25°C: 3.6A (Ta) FET Type: N-Channel |
на замовлення 1133 шт: термін постачання 21-31 дні (днів) |
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FDD3670 | onsemi |
Description: MOSFET N-CH 100V 34A TO252Packaging: Cut Tape (CT) Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63 Mounting Type: Surface Mount Operating Temperature: -55°C ~ 175°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 34A (Ta) Rds On (Max) @ Id, Vgs: 32mOhm @ 7.3A, 10V Power Dissipation (Max): 3.8W (Ta), 83W (Tc) Vgs(th) (Max) @ Id: 4V @ 250µA Supplier Device Package: TO-252AA Drive Voltage (Max Rds On, Min Rds On): 6V, 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 100 V Gate Charge (Qg) (Max) @ Vgs: 80 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 2490 pF @ 50 V |
на замовлення 1477 шт: термін постачання 21-31 дні (днів) |
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FDD3680 | onsemi |
Description: MOSFET N-CH 100V 25A TO252Input Capacitance (Ciss) (Max) @ Vds: 1735 pF @ 50 V Gate Charge (Qg) (Max) @ Vgs: 53 nC @ 10 V Drain to Source Voltage (Vdss): 100 V Vgs (Max): ±20V Drive Voltage (Max Rds On, Min Rds On): 6V, 10V Part Status: Obsolete Supplier Device Package: TO-252AA Vgs(th) (Max) @ Id: 4V @ 250µA Power Dissipation (Max): 68W (Ta) Rds On (Max) @ Id, Vgs: 46mOhm @ 6.1A, 10V Current - Continuous Drain (Id) @ 25°C: 25A (Ta) FET Type: N-Channel Technology: MOSFET (Metal Oxide) Operating Temperature: -55°C ~ 175°C (TJ) Mounting Type: Surface Mount Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63 Packaging: Cut Tape (CT) |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||||||||||
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FDD5670 | onsemi |
Description: MOSFET N-CH 60V 52A TO252Input Capacitance (Ciss) (Max) @ Vds: 2739 pF @ 15 V Gate Charge (Qg) (Max) @ Vgs: 73 nC @ 10 V Drain to Source Voltage (Vdss): 60 V Vgs (Max): ±20V Drive Voltage (Max Rds On, Min Rds On): 6V, 10V Supplier Device Package: TO-252AA Vgs(th) (Max) @ Id: 4V @ 250µA Power Dissipation (Max): 3.8W (Ta), 83W (Tc) Rds On (Max) @ Id, Vgs: 15mOhm @ 10A, 10V Current - Continuous Drain (Id) @ 25°C: 52A (Ta) FET Type: N-Channel Technology: MOSFET (Metal Oxide) Operating Temperature: -55°C ~ 175°C (TJ) Mounting Type: Surface Mount Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63 Packaging: Cut Tape (CT) |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||||||||||
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FDLL485B | onsemi |
Description: DIODE STANDARD 180V 200MA SOD80Packaging: Cut Tape (CT) Package / Case: DO-213AC, MINI-MELF, SOD-80 Mounting Type: Surface Mount Speed: Small Signal =< 200mA (Io), Any Speed Technology: Standard Capacitance @ Vr, F: 6pF @ 0V, 1MHz Current - Average Rectified (Io): 200mA Supplier Device Package: SOD-80 Operating Temperature - Junction: -65°C ~ 200°C Part Status: Active Voltage - DC Reverse (Vr) (Max): 180 V Voltage - Forward (Vf) (Max) @ If: 1 V @ 100 mA Current - Reverse Leakage @ Vr: 25 nA @ 180 V |
на замовлення 1814 шт: термін постачання 21-31 дні (днів) |
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FDMS8090 | onsemi |
Description: MOSFET 2N-CH 100V 10A 8MLPPackaging: Cut Tape (CT) Package / Case: 8-PowerWDFN Mounting Type: Surface Mount Configuration: 2 N-Channel (Dual) Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) Power - Max: 2.2W Drain to Source Voltage (Vdss): 100V Current - Continuous Drain (Id) @ 25°C: 10A Input Capacitance (Ciss) (Max) @ Vds: 1800pF @ 50V Rds On (Max) @ Id, Vgs: 13mOhm @ 10A, 10V Gate Charge (Qg) (Max) @ Vgs: 27nC @ 10V FET Feature: Logic Level Gate Vgs(th) (Max) @ Id: 4V @ 250µA Supplier Device Package: 8-MLP (5x6), Power56 |
на замовлення 946 шт: термін постачання 21-31 дні (днів) |
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FJT44KTF | onsemi |
Description: TRANS NPN 400V 0.3A SOT-223-4Packaging: Cut Tape (CT) Package / Case: TO-261-4, TO-261AA Mounting Type: Surface Mount Transistor Type: NPN Operating Temperature: 150°C (TJ) Vce Saturation (Max) @ Ib, Ic: 750mV @ 5mA, 50mA Current - Collector Cutoff (Max): 500nA DC Current Gain (hFE) (Min) @ Ic, Vce: 50 @ 10mA, 10V Supplier Device Package: SOT-223-4 Part Status: Active Current - Collector (Ic) (Max): 300 mA Voltage - Collector Emitter Breakdown (Max): 400 V Power - Max: 2 W |
на замовлення 2221 шт: термін постачання 21-31 дні (днів) |
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FJV992FMTF | onsemi |
Description: TRANS PNP 120V 0.05A SOT-23-3Power - Max: 300 mW Voltage - Collector Emitter Breakdown (Max): 120 V Current - Collector (Ic) (Max): 50 mA Supplier Device Package: SOT-23-3 Frequency - Transition: 50MHz DC Current Gain (hFE) (Min) @ Ic, Vce: 300 @ 1mA, 6V Vce Saturation (Max) @ Ib, Ic: 300mV @ 1mA, 10mA Operating Temperature: 150°C (TJ) Transistor Type: PNP Mounting Type: Surface Mount Package / Case: TO-236-3, SC-59, SOT-23-3 Packaging: Cut Tape (CT) |
на замовлення 92907 шт: термін постачання 21-31 дні (днів) |
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FQD2N90TM | onsemi |
Description: MOSFET N-CH 900V 1.7A DPAKPackaging: Cut Tape (CT) Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63 Mounting Type: Surface Mount Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 1.7A (Tc) Rds On (Max) @ Id, Vgs: 7.2Ohm @ 850mA, 10V Power Dissipation (Max): 2.5W (Ta), 50W (Tc) Vgs(th) (Max) @ Id: 5V @ 250µA Supplier Device Package: TO-252AA Part Status: Active Drive Voltage (Max Rds On, Min Rds On): 10V Vgs (Max): ±30V Drain to Source Voltage (Vdss): 900 V Gate Charge (Qg) (Max) @ Vgs: 15 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 500 pF @ 25 V |
на замовлення 6691 шт: термін постачання 21-31 дні (днів) |
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FSA2267AL10X | onsemi |
Description: IC SWITCH DUAL SPDT 10MICROPAK Number of Channels: 2 Multiplexer/Demultiplexer Circuit: 2:1 Switch Circuit: SPDT Voltage - Supply, Single (V+): 2.3V ~ 4.3V Supplier Device Package: 10-MicroPak™ -3db Bandwidth: 45MHz On-State Resistance (Max): 350mOhm (Typ) Applications: Audio Operating Temperature: -40°C ~ 85°C (TA) Mounting Type: Surface Mount Package / Case: 10-UFQFN Exposed Pad Packaging: Cut Tape (CT) |
на замовлення 1623 шт: термін постачання 21-31 дні (днів) |
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FSA66P5X | onsemi |
Description: IC SWITCH SPST-NO X 1 SC70-5Number of Circuits: 1 Channel Capacitance (CS(off), CD(off)): 6pF Multiplexer/Demultiplexer Circuit: 1:1 Switch Circuit: SPST - NO Charge Injection: 0.05pC Voltage - Supply, Single (V+): 1.65V ~ 5.5V Supplier Device Package: SC-70-5 -3db Bandwidth: 250MHz Operating Temperature: -40°C ~ 85°C (TA) Mounting Type: Surface Mount Package / Case: 5-TSSOP, SC-70-5, SOT-353 Packaging: Cut Tape (CT) |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||||||||||
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FSB649 | onsemi |
Description: TRANS NPN 25V 3A SOT-23-3Packaging: Cut Tape (CT) Package / Case: TO-236-3, SC-59, SOT-23-3 Mounting Type: Surface Mount Transistor Type: NPN Operating Temperature: -55°C ~ 150°C (TJ) Vce Saturation (Max) @ Ib, Ic: 600mV @ 300mA, 3A Current - Collector Cutoff (Max): 100nA (ICBO) DC Current Gain (hFE) (Min) @ Ic, Vce: 100 @ 1A, 2V Frequency - Transition: 150MHz Supplier Device Package: SOT-23-3 Part Status: Active Current - Collector (Ic) (Max): 3 A Voltage - Collector Emitter Breakdown (Max): 25 V Power - Max: 500 mW |
на замовлення 2868 шт: термін постачання 21-31 дні (днів) |
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HCPL0701R2 | onsemi |
Description: OPTOISO 2.5KV DARL W/BASE 8-SOICCurrent - DC Forward (If) (Max): 20 mA Number of Channels: 1 Part Status: Active Turn On / Turn Off Time (Typ): 300ns, 1.6µs Voltage - Output (Max): 18V Supplier Device Package: 8-SOIC Current Transfer Ratio (Max): 2600% @ 1.6mA Current Transfer Ratio (Min): 500% @ 1.6mA Voltage - Isolation: 2500Vrms Current - Output / Channel: 60mA Input Type: DC Voltage - Forward (Vf) (Typ): 1.25V Operating Temperature: -40°C ~ 85°C Mounting Type: Surface Mount Output Type: Darlington with Base Package / Case: 8-SOIC (0.154", 3.90mm Width) Packaging: Cut Tape (CT) |
на замовлення 2203 шт: термін постачання 21-31 дні (днів) |
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HGTD1N120BNS9A | onsemi |
Description: IGBT NPT 1200V 5.3A TO-252AAPackaging: Cut Tape (CT) Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63 Mounting Type: Surface Mount Operating Temperature: -55°C ~ 150°C (TJ) Input Type: Standard Vce(on) (Max) @ Vge, Ic: 2.9V @ 15V, 1A Supplier Device Package: TO-252AA IGBT Type: NPT Td (on/off) @ 25°C: 15ns/67ns Switching Energy: 70µJ (on), 90µJ (off) Test Condition: 960V, 1A, 82Ohm, 15V Gate Charge: 14 nC Part Status: Active Current - Collector (Ic) (Max): 5.3 A Voltage - Collector Emitter Breakdown (Max): 1200 V Current - Collector Pulsed (Icm): 6 A Power - Max: 60 W |
на замовлення 1323 шт: термін постачання 21-31 дні (днів) |
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KSB834WYTM | onsemi |
Description: TRANS PNP 60V 3A D2PAKPower - Max: 1.5 W Voltage - Collector Emitter Breakdown (Max): 60 V Current - Collector (Ic) (Max): 3 A Part Status: Active Supplier Device Package: TO-263 (D2Pak) Frequency - Transition: 9MHz DC Current Gain (hFE) (Min) @ Ic, Vce: 100 @ 5mA, 5V Current - Collector Cutoff (Max): 100µA (ICBO) Vce Saturation (Max) @ Ib, Ic: 1V @ 300mA, 3A Operating Temperature: 150°C (TJ) Transistor Type: PNP Mounting Type: Surface Mount Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB Packaging: Cut Tape (CT) |
на замовлення 809 шт: термін постачання 21-31 дні (днів) |
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KST5550MTF | onsemi |
Description: TRANS NPN 140V 0.6A SOT-23-3Power - Max: 350 mW Voltage - Collector Emitter Breakdown (Max): 140 V Current - Collector (Ic) (Max): 600 mA Part Status: Obsolete Supplier Device Package: SOT-23-3 Frequency - Transition: 300MHz DC Current Gain (hFE) (Min) @ Ic, Vce: 60 @ 10mA, 5V Current - Collector Cutoff (Max): 100nA (ICBO) Vce Saturation (Max) @ Ib, Ic: 250mV @ 5mA, 50mA Transistor Type: NPN Mounting Type: Surface Mount Package / Case: TO-236-3, SC-59, SOT-23-3 Packaging: Cut Tape (CT) |
товару немає в наявності |
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MMBD2838 | onsemi |
Description: DIODE ARRAY GP 75V 200MA SOT23-3Packaging: Cut Tape (CT) Package / Case: TO-236-3, SC-59, SOT-23-3 Mounting Type: Surface Mount Speed: Small Signal =< 200mA (Io), Any Speed Reverse Recovery Time (trr): 4 ns Technology: Standard Diode Configuration: 1 Pair Common Cathode Current - Average Rectified (Io) (per Diode): 200mA Supplier Device Package: SOT-23-3 Operating Temperature - Junction: -55°C ~ 150°C Voltage - DC Reverse (Vr) (Max): 75 V Voltage - Forward (Vf) (Max) @ If: 1.2 V @ 100 mA Current - Reverse Leakage @ Vr: 100 nA @ 50 V |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||||||||||
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MMBT5962 | onsemi |
Description: TRANS NPN 45V 0.1A SOT23-3Packaging: Cut Tape (CT) Package / Case: TO-236-3, SC-59, SOT-23-3 Mounting Type: Surface Mount Transistor Type: NPN Operating Temperature: -55°C ~ 150°C (TJ) Vce Saturation (Max) @ Ib, Ic: 200mV @ 500µA, 10mA Current - Collector Cutoff (Max): 2nA (ICBO) DC Current Gain (hFE) (Min) @ Ic, Vce: 600 @ 10mA, 5V Supplier Device Package: SOT-23-3 Current - Collector (Ic) (Max): 100 mA Voltage - Collector Emitter Breakdown (Max): 45 V Power - Max: 350 mW |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||||||||||
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MMSZ4688 | onsemi |
Description: DIODE ZENER 4.7V 500MW SOD123 Tolerance: ±5% Packaging: Cut Tape (CT) Package / Case: SOD-123 Mounting Type: Surface Mount Operating Temperature: -55°C ~ 150°C Voltage - Zener (Nom) (Vz): 4.7 V Supplier Device Package: SOD-123 Part Status: Obsolete Power - Max: 500 mW Voltage - Forward (Vf) (Max) @ If: 900 mV @ 10 mA Current - Reverse Leakage @ Vr: 10 µA @ 3 V |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||||||||||
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MMSZ5243B | onsemi |
Description: DIODE ZENER 13V 500MW SOD123Tolerance: ±5% Packaging: Cut Tape (CT) Package / Case: SOD-123 Mounting Type: Surface Mount Operating Temperature: -55°C ~ 150°C Voltage - Zener (Nom) (Vz): 13 V Impedance (Max) (Zzt): 13 Ohms Supplier Device Package: SOD-123 Power - Max: 500 mW Voltage - Forward (Vf) (Max) @ If: 900 mV @ 10 mA Current - Reverse Leakage @ Vr: 500 nA @ 9.9 V |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||||||||||
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NC7S08P5 | onsemi |
Description: IC GATE AND 1CH 2-INP SC70-5Packaging: Cut Tape (CT) Package / Case: 5-TSSOP, SC-70-5, SOT-353 Mounting Type: Surface Mount Logic Type: AND Gate Operating Temperature: -40°C ~ 85°C Voltage - Supply: 2V ~ 6V Current - Output High, Low: 2.6mA, 2.6mA Number of Inputs: 2 Supplier Device Package: SC-70-5 Input Logic Level - High: 1.5V Input Logic Level - Low: 0.5V Max Propagation Delay @ V, Max CL: 17ns @ 6V, 50pF Number of Circuits: 1 Current - Quiescent (Max): 1 µA |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||||||||||
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NC7S32L6X | onsemi |
Description: IC GATE OR 1CH 2-INP 6MICROPAKPackaging: Cut Tape (CT) Package / Case: 6-UFDFN Mounting Type: Surface Mount Logic Type: OR Gate Operating Temperature: -40°C ~ 85°C Voltage - Supply: 2V ~ 6V Current - Output High, Low: 2.6mA, 2.6mA Number of Inputs: 2 Supplier Device Package: 6-MicroPak Input Logic Level - High: 1.5V Input Logic Level - Low: 0.5V Max Propagation Delay @ V, Max CL: 17ns @ 6V, 50pF Part Status: Obsolete Number of Circuits: 1 Current - Quiescent (Max): 1 µA |
на замовлення 95000 шт: термін постачання 21-31 дні (днів) |
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NC7SZ04L6X | onsemi |
Description: IC INVERTER 1CH 1-INP 6MICROPAKPackage / Case: 6-UFDFN Packaging: Cut Tape (CT) Mounting Type: Surface Mount Current - Quiescent (Max): 2 µA Number of Circuits: 1 Max Propagation Delay @ V, Max CL: 4.3ns @ 5V, 50pF Supplier Device Package: 6-MicroPak Number of Inputs: 1 Current - Output High, Low: 32mA, 32mA Voltage - Supply: 1.65V ~ 5.5V Operating Temperature: -40°C ~ 85°C Logic Type: Inverter |
на замовлення 261232 шт: термін постачання 21-31 дні (днів) |
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NC7SZ332L6X | onsemi |
Description: IC GATE OR 1CH 3-INP 6MICROPAKCurrent - Quiescent (Max): 2 µA Number of Circuits: 1 Max Propagation Delay @ V, Max CL: 7ns @ 5V, 50pF Supplier Device Package: 6-MicroPak Number of Inputs: 3 Current - Output High, Low: 32mA, 32mA Voltage - Supply: 1.65V ~ 5.5V Operating Temperature: -40°C ~ 85°C Logic Type: OR Gate Mounting Type: Surface Mount Package / Case: 6-UFDFN Packaging: Cut Tape (CT) |
на замовлення 10000 шт: термін постачання 21-31 дні (днів) |
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NZT44H8 | onsemi |
Description: TRANS NPN 60V 8A SOT223-4Power - Max: 1.5 W Voltage - Collector Emitter Breakdown (Max): 60 V Current - Collector (Ic) (Max): 8 A Part Status: Obsolete Supplier Device Package: SOT-223-4 Frequency - Transition: 50MHz DC Current Gain (hFE) (Min) @ Ic, Vce: 40 @ 4A, 1V Current - Collector Cutoff (Max): 10µA (ICBO) Vce Saturation (Max) @ Ib, Ic: 1V @ 400mA, 8A Operating Temperature: -55°C ~ 150°C (TJ) Transistor Type: NPN Mounting Type: Surface Mount Package / Case: TO-261-4, TO-261AA Packaging: Cut Tape (CT) |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||||||||||
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NZT45H8 | onsemi |
Description: TRANS PNP 60V 8A SOT223-4Power - Max: 1.5 W Voltage - Collector Emitter Breakdown (Max): 60 V Current - Collector (Ic) (Max): 8 A Part Status: Obsolete Supplier Device Package: SOT-223-4 Frequency - Transition: 40MHz DC Current Gain (hFE) (Min) @ Ic, Vce: 40 @ 4A, 1V Current - Collector Cutoff (Max): 10µA (ICBO) Vce Saturation (Max) @ Ib, Ic: 1V @ 400mA, 8A Operating Temperature: -55°C ~ 150°C (TJ) Transistor Type: PNP Mounting Type: Surface Mount Package / Case: TO-261-4, TO-261AA Packaging: Cut Tape (CT) |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||||||||||
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NZT605 | onsemi |
Description: TRANS NPN DARL 110V 1.5A SOT-223Power - Max: 1 W Voltage - Collector Emitter Breakdown (Max): 110 V Current - Collector (Ic) (Max): 1.5 A Supplier Device Package: SOT-223-4 Frequency - Transition: 150MHz DC Current Gain (hFE) (Min) @ Ic, Vce: 2000 @ 1A, 5V Current - Collector Cutoff (Max): 10nA (ICBO) Vce Saturation (Max) @ Ib, Ic: 1.5V @ 1mA, 1A Operating Temperature: -55°C ~ 150°C (TJ) Transistor Type: NPN - Darlington Mounting Type: Surface Mount Package / Case: TO-261-4, TO-261AA Packaging: Cut Tape (CT) |
на замовлення 14397 шт: термін постачання 21-31 дні (днів) |
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6N136SDM | onsemi |
Description: OPTOISO 5KV TRANS W/BASE 8-SMDPackaging: Cut Tape (CT) Package / Case: 8-SMD, Gull Wing Output Type: Transistor with Base Mounting Type: Surface Mount Operating Temperature: -40°C ~ 100°C Voltage - Forward (Vf) (Typ): 1.45V Input Type: DC Current - Output / Channel: 8mA Voltage - Isolation: 5000Vrms Current Transfer Ratio (Min): 19% @ 16mA Current Transfer Ratio (Max): 50% @ 16mA Supplier Device Package: 8-SMD Voltage - Output (Max): 20V Turn On / Turn Off Time (Typ): 250ns, 260ns Part Status: Active Number of Channels: 1 Current - DC Forward (If) (Max): 25 mA |
на замовлення 5199 шт: термін постачання 21-31 дні (днів) |
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FAN3214TMX | onsemi |
Description: IC GATE DRVR LOW-SIDE 8SOICDigiKey Programmable: Not Verified Part Status: Active Current - Peak Output (Source, Sink): 5A, 5A Logic Voltage - VIL, VIH: 0.8V, 2V Gate Type: N-Channel MOSFET Number of Drivers: 2 Driven Configuration: Low-Side Channel Type: Synchronous Rise / Fall Time (Typ): 12ns, 9ns Supplier Device Package: 8-SOIC Input Type: Non-Inverting Voltage - Supply: 4.5V ~ 18V Operating Temperature: -40°C ~ 125°C (TA) Mounting Type: Surface Mount Package / Case: 8-SOIC (0.154", 3.90mm Width) Packaging: Cut Tape (CT) |
на замовлення 300669 шт: термін постачання 21-31 дні (днів) |
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FAN3216TMX | onsemi |
Description: IC GATE DRVR LOW-SIDE 8SOICDigiKey Programmable: Not Verified Part Status: Active Current - Peak Output (Source, Sink): 3A, 3A Logic Voltage - VIL, VIH: 0.8V, 2V Gate Type: N-Channel MOSFET Number of Drivers: 2 Driven Configuration: Low-Side Channel Type: Synchronous Rise / Fall Time (Typ): 12ns, 9ns Supplier Device Package: 8-SOIC Input Type: Inverting Voltage - Supply: 4.5V ~ 18V Operating Temperature: -40°C ~ 125°C (TA) Mounting Type: Surface Mount Package / Case: 8-SOIC (0.154", 3.90mm Width) Packaging: Cut Tape (CT) |
на замовлення 324969 шт: термін постачання 21-31 дні (днів) |
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FAN4852IMU8X | onsemi |
Description: IC CMOS 2 CIRCUIT 8MSOPNumber of Circuits: 2 Supplier Device Package: 8-MSOP Voltage - Input Offset: 300 µV Current - Input Bias: 0.1 pA Gain Bandwidth Product: 9 MHz Slew Rate: 6.1V/µs Current - Supply: 900µA Operating Temperature: -40°C ~ 85°C Amplifier Type: CMOS Mounting Type: Surface Mount Output Type: Rail-to-Rail Package / Case: 8-TSSOP, 8-MSOP (0.118", 3.00mm Width) Packaging: Cut Tape (CT) Voltage - Supply Span (Max): 5 V Voltage - Supply Span (Min): 2.5 V Current - Output / Channel: 90 mA |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||||||||||
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FAN6921MLMY | onsemi |
Description: IC PFC CTRLR CRM 16SOPMounting Type: Surface Mount Package / Case: 16-SOIC (0.154", 3.90mm Width) Packaging: Cut Tape (CT) Current - Startup: 10 µA Part Status: Last Time Buy Supplier Device Package: 16-SOIC Mode: Critical Conduction (CRM) Voltage - Supply: 8.5V ~ 25V Operating Temperature: -40°C ~ 105°C |
на замовлення 5000 шт: термін постачання 21-31 дні (днів) |
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FAN7085MX-GF085 | onsemi |
Description: IC GATE DRVR HIGH-SIDE 8SOICQualification: AEC-Q100 Grade: Automotive DigiKey Programmable: Not Verified Part Status: Active Current - Peak Output (Source, Sink): 450mA, 450mA Gate Type: IGBT, MOSFET (N-Channel) Number of Drivers: 1 Driven Configuration: High-Side Channel Type: Single Rise / Fall Time (Typ): 65ns, 25ns Supplier Device Package: 8-SOIC High Side Voltage - Max (Bootstrap): 300 V Input Type: Inverting Voltage - Supply: 4.5V ~ 20V Operating Temperature: -40°C ~ 150°C (TJ) Mounting Type: Surface Mount Package / Case: 8-SOIC (0.154", 3.90mm Width) Packaging: Cut Tape (CT) |
на замовлення 3533 шт: термін постачання 21-31 дні (днів) |
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FAN73901MX | onsemi |
Description: IC GATE DRVR HALF-BRIDGE 8SOICPackaging: Cut Tape (CT) Package / Case: 8-SOIC (0.154", 3.90mm Width) Mounting Type: Surface Mount Operating Temperature: -40°C ~ 150°C (TJ) Voltage - Supply: 10V ~ 20V Input Type: Non-Inverting High Side Voltage - Max (Bootstrap): 600 V Supplier Device Package: 8-SOIC Rise / Fall Time (Typ): 25ns, 20ns Channel Type: Independent Driven Configuration: Half-Bridge Number of Drivers: 2 Gate Type: IGBT, MOSFET (N-Channel) Logic Voltage - VIL, VIH: 1.2V, 2.5V Current - Peak Output (Source, Sink): 2.5A, 2.5A Part Status: Last Time Buy DigiKey Programmable: Not Verified |
на замовлення 8835 шт: термін постачання 21-31 дні (днів) |
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FAN73932MX | onsemi |
Description: IC GATE DRVR HALF-BRIDGE 8SOPPackage / Case: 8-SOIC (0.154", 3.90mm Width) Packaging: Cut Tape (CT) DigiKey Programmable: Not Verified Part Status: Last Time Buy Current - Peak Output (Source, Sink): 2.5A, 2.5A Logic Voltage - VIL, VIH: 0.8V, 2.5V Gate Type: IGBT, N-Channel MOSFET Number of Drivers: 2 Driven Configuration: Half-Bridge Channel Type: Synchronous Rise / Fall Time (Typ): 25ns, 20ns Supplier Device Package: 8-SOIC High Side Voltage - Max (Bootstrap): 600 V Input Type: Non-Inverting Voltage - Supply: 10V ~ 20V Operating Temperature: -40°C ~ 150°C (TJ) Mounting Type: Surface Mount |
на замовлення 203 шт: термін постачання 21-31 дні (днів) |
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FAN73933MX | onsemi |
Description: IC GATE DRVR HALF-BRIDGE 14SOPPart Status: Last Time Buy Current - Peak Output (Source, Sink): 2.5A, 2.5A Logic Voltage - VIL, VIH: 0.8V, 2.5V Gate Type: IGBT, MOSFET (N-Channel) Number of Drivers: 2 Driven Configuration: Half-Bridge Channel Type: Independent Rise / Fall Time (Typ): 40ns, 20ns Supplier Device Package: 14-SOP High Side Voltage - Max (Bootstrap): 600 V Input Type: Non-Inverting Voltage - Supply: 10V ~ 20V Operating Temperature: -40°C ~ 150°C (TJ) Mounting Type: Surface Mount Package / Case: 14-SOIC (0.154", 3.90mm Width) Packaging: Cut Tape (CT) DigiKey Programmable: Not Verified |
на замовлення 10654 шт: термін постачання 21-31 дні (днів) |
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FDD3N50NZTM | onsemi |
Description: MOSFET N-CH 500V 2.5A DPAKInput Capacitance (Ciss) (Max) @ Vds: 280 pF @ 25 V Gate Charge (Qg) (Max) @ Vgs: 8 nC @ 10 V Drain to Source Voltage (Vdss): 500 V Vgs (Max): ±25V Drive Voltage (Max Rds On, Min Rds On): 10V Supplier Device Package: TO-252AA Vgs(th) (Max) @ Id: 5V @ 250µA Power Dissipation (Max): 40W (Tc) Rds On (Max) @ Id, Vgs: 2.5Ohm @ 1.25A, 10V Current - Continuous Drain (Id) @ 25°C: 2.5A (Tc) FET Type: N-Channel Technology: MOSFET (Metal Oxide) Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Surface Mount Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63 Packaging: Cut Tape (CT) |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||||||||||
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FDMS7608S | onsemi |
Description: MOSFET 2N-CH 30V 12A/15A POWER56Drain to Source Voltage (Vdss): 30V Power - Max: 1W Technology: MOSFET (Metal Oxide) Operating Temperature: -55°C ~ 150°C (TJ) Configuration: 2 N-Channel (Dual) Mounting Type: Surface Mount Package / Case: 8-PowerWDFN Packaging: Cut Tape (CT) Supplier Device Package: Power56 Vgs(th) (Max) @ Id: 3V @ 250µA FET Feature: Logic Level Gate Gate Charge (Qg) (Max) @ Vgs: 24nC @ 10V Rds On (Max) @ Id, Vgs: 10mOhm @ 12A, 10V Input Capacitance (Ciss) (Max) @ Vds: 1510pF @ 15V Current - Continuous Drain (Id) @ 25°C: 12A, 15A |
на замовлення 26301 шт: термін постачання 21-31 дні (днів) |
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FQD2P40TM | onsemi |
Description: MOSFET P-CH 400V 1.56A DPAKPackaging: Cut Tape (CT) Gate Charge (Qg) (Max) @ Vgs: 13 nC @ 10 V Drain to Source Voltage (Vdss): 400 V Vgs (Max): ±30V Drive Voltage (Max Rds On, Min Rds On): 10V Supplier Device Package: TO-252AA Vgs(th) (Max) @ Id: 5V @ 250µA Power Dissipation (Max): 2.5W (Ta), 38W (Tc) Rds On (Max) @ Id, Vgs: 6.5Ohm @ 780mA, 10V Current - Continuous Drain (Id) @ 25°C: 1.56A (Tc) FET Type: P-Channel Technology: MOSFET (Metal Oxide) Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Surface Mount Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63 Input Capacitance (Ciss) (Max) @ Vds: 350 pF @ 25 V |
на замовлення 4902 шт: термін постачання 21-31 дні (днів) |
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KSC5402DTF | onsemi |
Description: TRANS NPN 525V 2A TO252AAPower - Max: 30 W Voltage - Collector Emitter Breakdown (Max): 525 V Current - Collector (Ic) (Max): 2 A Supplier Device Package: TO-252AA Frequency - Transition: 11MHz DC Current Gain (hFE) (Min) @ Ic, Vce: 6 @ 1A, 1V Current - Collector Cutoff (Max): 250µA Vce Saturation (Max) @ Ib, Ic: 750mV @ 200mA, 1A Operating Temperature: 150°C (TJ) Transistor Type: NPN Mounting Type: Surface Mount Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63 Packaging: Cut Tape (CT) |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||||||||||
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FAN5624UMPX | onsemi |
Description: IC LED DRV LIN SGL WR 10UMLPType: Linear Number of Outputs: 4 Mounting Type: Surface Mount Package / Case: 10-UFQFN Packaging: Cut Tape (CT) Voltage - Supply (Max): 5.5V Voltage - Supply (Min): 2.7V Dimming: Single-Wire Supplier Device Package: 10-UMLP (1.8x1.4) Internal Switch(s): Yes Current - Output / Channel: 30mA Applications: Backlight Operating Temperature: -40°C ~ 85°C (TA) |
на замовлення 4177 шт: термін постачання 21-31 дні (днів) |
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FDC5661N-F085 | onsemi |
Description: MOSFET N-CH 60V 4.3A SUPERSOT6Vgs(th) (Max) @ Id: 3V @ 250µA Power Dissipation (Max): 1.6W (Ta) Rds On (Max) @ Id, Vgs: 47mOhm @ 4.3A, 10V Current - Continuous Drain (Id) @ 25°C: 4.3A (Ta) FET Type: N-Channel Technology: MOSFET (Metal Oxide) Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Surface Mount Package / Case: SOT-23-6 Thin, TSOT-23-6 Packaging: Cut Tape (CT) Qualification: AEC-Q101 Input Capacitance (Ciss) (Max) @ Vds: 763 pF @ 25 V Gate Charge (Qg) (Max) @ Vgs: 19 nC @ 10 V Drain to Source Voltage (Vdss): 60 V Vgs (Max): ±20V Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Grade: Automotive Supplier Device Package: SuperSOT™-6 |
на замовлення 15336 шт: термін постачання 21-31 дні (днів) |
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FDN8601 | onsemi |
Description: MOSFET N-CH 100V 2.7A SUPERSOT3Input Capacitance (Ciss) (Max) @ Vds: 210 pF @ 50 V Gate Charge (Qg) (Max) @ Vgs: 5 nC @ 10 V Drain to Source Voltage (Vdss): 100 V Vgs (Max): ±20V Drive Voltage (Max Rds On, Min Rds On): 6V, 10V Part Status: Active Supplier Device Package: SOT-23-3 Vgs(th) (Max) @ Id: 4V @ 250µA Power Dissipation (Max): 1.5W (Ta) Rds On (Max) @ Id, Vgs: 109mOhm @ 1.5A, 10V Current - Continuous Drain (Id) @ 25°C: 2.7A (Ta) FET Type: N-Channel Technology: MOSFET (Metal Oxide) Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Surface Mount Package / Case: TO-236-3, SC-59, SOT-23-3 Packaging: Cut Tape (CT) |
на замовлення 21597 шт: термін постачання 21-31 дні (днів) |
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FDY302NZ | onsemi |
Description: MOSFET N-CH 20V 600MA SC89-3Rds On (Max) @ Id, Vgs: 300mOhm @ 600mA, 4.5V Current - Continuous Drain (Id) @ 25°C: 600mA (Ta) FET Type: N-Channel Technology: MOSFET (Metal Oxide) Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Surface Mount Package / Case: SC-89, SOT-490 Packaging: Cut Tape (CT) Input Capacitance (Ciss) (Max) @ Vds: 60 pF @ 10 V Gate Charge (Qg) (Max) @ Vgs: 1.1 nC @ 4.5 V Drain to Source Voltage (Vdss): 20 V Vgs (Max): ±12V Drive Voltage (Max Rds On, Min Rds On): 1.8V, 4.5V Part Status: Active Supplier Device Package: SC-89-3 Vgs(th) (Max) @ Id: 1.5V @ 250µA Power Dissipation (Max): 625mW (Ta) |
на замовлення 6386 шт: термін постачання 21-31 дні (днів) |
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FPF1038UCX | onsemi |
Description: IC PWR SWITCH P-CHAN 1:1 6WLCSP |
на замовлення 25550 шт: термін постачання 21-31 дні (днів) |
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| FCH072N60F |
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Виробник: onsemi
Description: MOSFET N-CH 600V 52A TO247-3
Packaging: Tube
Package / Case: TO-247-3
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 52A (Tc)
Rds On (Max) @ Id, Vgs: 72mOhm @ 26A, 10V
Power Dissipation (Max): 481W (Tc)
Vgs(th) (Max) @ Id: 5V @ 250µA
Supplier Device Package: TO-247-3
Part Status: Not For New Designs
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 600 V
Gate Charge (Qg) (Max) @ Vgs: 215 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 8660 pF @ 100 V
Description: MOSFET N-CH 600V 52A TO247-3
Packaging: Tube
Package / Case: TO-247-3
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 52A (Tc)
Rds On (Max) @ Id, Vgs: 72mOhm @ 26A, 10V
Power Dissipation (Max): 481W (Tc)
Vgs(th) (Max) @ Id: 5V @ 250µA
Supplier Device Package: TO-247-3
Part Status: Not For New Designs
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 600 V
Gate Charge (Qg) (Max) @ Vgs: 215 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 8660 pF @ 100 V
на замовлення 41349 шт:
термін постачання 21-31 дні (днів)
| Кількість | Ціна без ПДВ |
|---|---|
| 1+ | 691.22 грн |
| 30+ | 395.14 грн |
| 120+ | 335.79 грн |
| 510+ | 291.07 грн |
| FDMS3669S |
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Виробник: onsemi
Description: MOSFET 2N-CH 30V 13A/18A POWER56
Supplier Device Package: Power56
Vgs(th) (Max) @ Id: 2.7V @ 250µA
FET Feature: Logic Level Gate
Gate Charge (Qg) (Max) @ Vgs: 24nC @ 10V
Rds On (Max) @ Id, Vgs: 10mOhm @ 13A, 10V
Input Capacitance (Ciss) (Max) @ Vds: 1605pF @ 15V
Current - Continuous Drain (Id) @ 25°C: 13A, 18A
Drain to Source Voltage (Vdss): 30V
Power - Max: 1W
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 150°C (TJ)
Configuration: 2 N-Channel (Dual) Asymmetrical
Mounting Type: Surface Mount
Package / Case: 8-PowerTDFN
Packaging: Tape & Reel (TR)
Description: MOSFET 2N-CH 30V 13A/18A POWER56
Supplier Device Package: Power56
Vgs(th) (Max) @ Id: 2.7V @ 250µA
FET Feature: Logic Level Gate
Gate Charge (Qg) (Max) @ Vgs: 24nC @ 10V
Rds On (Max) @ Id, Vgs: 10mOhm @ 13A, 10V
Input Capacitance (Ciss) (Max) @ Vds: 1605pF @ 15V
Current - Continuous Drain (Id) @ 25°C: 13A, 18A
Drain to Source Voltage (Vdss): 30V
Power - Max: 1W
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 150°C (TJ)
Configuration: 2 N-Channel (Dual) Asymmetrical
Mounting Type: Surface Mount
Package / Case: 8-PowerTDFN
Packaging: Tape & Reel (TR)
товару немає в наявності
Мінімальне замовлення: 3000 шт
В кошику
од. на суму грн.
| FDN537N |
![]() |
Виробник: onsemi
Description: MOSFET N-CH 30V 6.5A SUPERSOT3
Input Capacitance (Ciss) (Max) @ Vds: 465 pF @ 15 V
Gate Charge (Qg) (Max) @ Vgs: 8.4 nC @ 10 V
Drain to Source Voltage (Vdss): 30 V
Vgs (Max): ±20V
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Part Status: Active
Supplier Device Package: SOT-23-3
Vgs(th) (Max) @ Id: 3V @ 250µA
Power Dissipation (Max): 1.5W (Ta)
Rds On (Max) @ Id, Vgs: 23mOhm @ 6.5A, 10V
Current - Continuous Drain (Id) @ 25°C: 6.5A (Ta), 6.5A (Tc)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: TO-236-3, SC-59, SOT-23-3
Packaging: Tape & Reel (TR)
Description: MOSFET N-CH 30V 6.5A SUPERSOT3
Input Capacitance (Ciss) (Max) @ Vds: 465 pF @ 15 V
Gate Charge (Qg) (Max) @ Vgs: 8.4 nC @ 10 V
Drain to Source Voltage (Vdss): 30 V
Vgs (Max): ±20V
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Part Status: Active
Supplier Device Package: SOT-23-3
Vgs(th) (Max) @ Id: 3V @ 250µA
Power Dissipation (Max): 1.5W (Ta)
Rds On (Max) @ Id, Vgs: 23mOhm @ 6.5A, 10V
Current - Continuous Drain (Id) @ 25°C: 6.5A (Ta), 6.5A (Tc)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: TO-236-3, SC-59, SOT-23-3
Packaging: Tape & Reel (TR)
на замовлення 60000 шт:
термін постачання 21-31 дні (днів)
| Кількість | Ціна без ПДВ |
|---|---|
| 3000+ | 18.01 грн |
| 6000+ | 16.68 грн |
| 9000+ | 15.97 грн |
| 15000+ | 14.73 грн |
| FDB9406-F085 |
![]() |
Виробник: onsemi
Description: MOSFET N-CH 40V 110A D2PAK
Qualification: AEC-Q101
Grade: Automotive
FET Type: N-Channel
Input Capacitance (Ciss) (Max) @ Vds: 7710 pF @ 25 V
Gate Charge (Qg) (Max) @ Vgs: 138 nC @ 10 V
Drain to Source Voltage (Vdss): 40 V
Vgs (Max): ±20V
Drive Voltage (Max Rds On, Min Rds On): 10V
Part Status: Active
Supplier Device Package: TO-263 (D2Pak)
Vgs(th) (Max) @ Id: 4V @ 250µA
Power Dissipation (Max): 176W (Tj)
Rds On (Max) @ Id, Vgs: 1.8mOhm @ 80A, 10V
Current - Continuous Drain (Id) @ 25°C: 110A (Tc)
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 175°C (TJ)
Mounting Type: Surface Mount
Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
Packaging: Tape & Reel (TR)
Description: MOSFET N-CH 40V 110A D2PAK
Qualification: AEC-Q101
Grade: Automotive
FET Type: N-Channel
Input Capacitance (Ciss) (Max) @ Vds: 7710 pF @ 25 V
Gate Charge (Qg) (Max) @ Vgs: 138 nC @ 10 V
Drain to Source Voltage (Vdss): 40 V
Vgs (Max): ±20V
Drive Voltage (Max Rds On, Min Rds On): 10V
Part Status: Active
Supplier Device Package: TO-263 (D2Pak)
Vgs(th) (Max) @ Id: 4V @ 250µA
Power Dissipation (Max): 176W (Tj)
Rds On (Max) @ Id, Vgs: 1.8mOhm @ 80A, 10V
Current - Continuous Drain (Id) @ 25°C: 110A (Tc)
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 175°C (TJ)
Mounting Type: Surface Mount
Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
Packaging: Tape & Reel (TR)
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В кошику
од. на суму грн.
| FAN53541UCX |
![]() |
Виробник: onsemi
Description: IC REG BUCK ADJ 5A 20WLCSP
Description: IC REG BUCK ADJ 5A 20WLCSP
товару немає в наявності
В кошику
од. на суму грн.
| FDMS3669S |
![]() |
Виробник: onsemi
Description: MOSFET 2N-CH 30V 13A/18A POWER56
Supplier Device Package: Power56
Vgs(th) (Max) @ Id: 2.7V @ 250µA
FET Feature: Logic Level Gate
Gate Charge (Qg) (Max) @ Vgs: 24nC @ 10V
Rds On (Max) @ Id, Vgs: 10mOhm @ 13A, 10V
Input Capacitance (Ciss) (Max) @ Vds: 1605pF @ 15V
Current - Continuous Drain (Id) @ 25°C: 13A, 18A
Drain to Source Voltage (Vdss): 30V
Power - Max: 1W
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 150°C (TJ)
Configuration: 2 N-Channel (Dual) Asymmetrical
Mounting Type: Surface Mount
Package / Case: 8-PowerTDFN
Packaging: Cut Tape (CT)
Description: MOSFET 2N-CH 30V 13A/18A POWER56
Supplier Device Package: Power56
Vgs(th) (Max) @ Id: 2.7V @ 250µA
FET Feature: Logic Level Gate
Gate Charge (Qg) (Max) @ Vgs: 24nC @ 10V
Rds On (Max) @ Id, Vgs: 10mOhm @ 13A, 10V
Input Capacitance (Ciss) (Max) @ Vds: 1605pF @ 15V
Current - Continuous Drain (Id) @ 25°C: 13A, 18A
Drain to Source Voltage (Vdss): 30V
Power - Max: 1W
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 150°C (TJ)
Configuration: 2 N-Channel (Dual) Asymmetrical
Mounting Type: Surface Mount
Package / Case: 8-PowerTDFN
Packaging: Cut Tape (CT)
на замовлення 6169 шт:
термін постачання 21-31 дні (днів)
| Кількість | Ціна без ПДВ |
|---|---|
| 2+ | 176.68 грн |
| 10+ | 106.78 грн |
| 100+ | 72.84 грн |
| 500+ | 56.46 грн |
| FDN537N |
![]() |
Виробник: onsemi
Description: MOSFET N-CH 30V 6.5A SUPERSOT3
Input Capacitance (Ciss) (Max) @ Vds: 465 pF @ 15 V
Gate Charge (Qg) (Max) @ Vgs: 8.4 nC @ 10 V
Drain to Source Voltage (Vdss): 30 V
Vgs (Max): ±20V
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Part Status: Active
Supplier Device Package: SOT-23-3
Vgs(th) (Max) @ Id: 3V @ 250µA
Power Dissipation (Max): 1.5W (Ta)
Rds On (Max) @ Id, Vgs: 23mOhm @ 6.5A, 10V
Current - Continuous Drain (Id) @ 25°C: 6.5A (Ta), 6.5A (Tc)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: TO-236-3, SC-59, SOT-23-3
Packaging: Cut Tape (CT)
Description: MOSFET N-CH 30V 6.5A SUPERSOT3
Input Capacitance (Ciss) (Max) @ Vds: 465 pF @ 15 V
Gate Charge (Qg) (Max) @ Vgs: 8.4 nC @ 10 V
Drain to Source Voltage (Vdss): 30 V
Vgs (Max): ±20V
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Part Status: Active
Supplier Device Package: SOT-23-3
Vgs(th) (Max) @ Id: 3V @ 250µA
Power Dissipation (Max): 1.5W (Ta)
Rds On (Max) @ Id, Vgs: 23mOhm @ 6.5A, 10V
Current - Continuous Drain (Id) @ 25°C: 6.5A (Ta), 6.5A (Tc)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: TO-236-3, SC-59, SOT-23-3
Packaging: Cut Tape (CT)
на замовлення 60133 шт:
термін постачання 21-31 дні (днів)
| Кількість | Ціна без ПДВ |
|---|---|
| 5+ | 72.84 грн |
| 10+ | 44.18 грн |
| 100+ | 29.29 грн |
| 500+ | 21.63 грн |
| 1000+ | 19.58 грн |
| FTCO3V455A1 |
![]() |
Виробник: onsemi
Description: MOSFET 6N-CH 40V 150A MODULE
Supplier Device Package: Module
FET Feature: Logic Level Gate
Rds On (Max) @ Id, Vgs: 1.66mOhm @ 80A, 10V
Current - Continuous Drain (Id) @ 25°C: 150A
Drain to Source Voltage (Vdss): 40V
Power - Max: 115W
Technology: MOSFET (Metal Oxide)
Operating Temperature: 175°C (TJ)
Configuration: 6 N-Channel (3-Phase Bridge)
Mounting Type: Through Hole
Package / Case: 19-PowerDIP Module
Packaging: Tube
Description: MOSFET 6N-CH 40V 150A MODULE
Supplier Device Package: Module
FET Feature: Logic Level Gate
Rds On (Max) @ Id, Vgs: 1.66mOhm @ 80A, 10V
Current - Continuous Drain (Id) @ 25°C: 150A
Drain to Source Voltage (Vdss): 40V
Power - Max: 115W
Technology: MOSFET (Metal Oxide)
Operating Temperature: 175°C (TJ)
Configuration: 6 N-Channel (3-Phase Bridge)
Mounting Type: Through Hole
Package / Case: 19-PowerDIP Module
Packaging: Tube
товару немає в наявності
Мінімальне замовлення: 44 шт
В кошику
од. на суму грн.
| FDPC8012S |
![]() |
Виробник: onsemi
Description: MOSFET 2N-CH 25V 13A PWRCLIP-33
Packaging: Cut Tape (CT)
Package / Case: 8-PowerWDFN
Mounting Type: Surface Mount
Configuration: 2 N-Channel (Dual) Asymmetrical
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
Power - Max: 800mW, 900mW
Drain to Source Voltage (Vdss): 25V
Current - Continuous Drain (Id) @ 25°C: 13A, 26A
Input Capacitance (Ciss) (Max) @ Vds: 1075pF @ 13V
Rds On (Max) @ Id, Vgs: 7mOhm @ 12A, 4.5V
Gate Charge (Qg) (Max) @ Vgs: 8nC @ 4.5V
FET Feature: Logic Level Gate
Vgs(th) (Max) @ Id: 2.2V @ 250µA
Supplier Device Package: Powerclip-33
Part Status: Active
Description: MOSFET 2N-CH 25V 13A PWRCLIP-33
Packaging: Cut Tape (CT)
Package / Case: 8-PowerWDFN
Mounting Type: Surface Mount
Configuration: 2 N-Channel (Dual) Asymmetrical
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
Power - Max: 800mW, 900mW
Drain to Source Voltage (Vdss): 25V
Current - Continuous Drain (Id) @ 25°C: 13A, 26A
Input Capacitance (Ciss) (Max) @ Vds: 1075pF @ 13V
Rds On (Max) @ Id, Vgs: 7mOhm @ 12A, 4.5V
Gate Charge (Qg) (Max) @ Vgs: 8nC @ 4.5V
FET Feature: Logic Level Gate
Vgs(th) (Max) @ Id: 2.2V @ 250µA
Supplier Device Package: Powerclip-33
Part Status: Active
на замовлення 2947 шт:
термін постачання 21-31 дні (днів)
| Кількість | Ціна без ПДВ |
|---|---|
| 3+ | 135.61 грн |
| 10+ | 83.13 грн |
| 100+ | 56.00 грн |
| 500+ | 41.64 грн |
| 1000+ | 38.13 грн |
| FAN3240TMX |
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Виробник: onsemi
Description: IC PWR DRIVER N-CHAN 1:1 8SOIC
Fault Protection: Over Temperature, UVLO
Supplier Device Package: 8-SOIC
Ratio - Input:Output: 1:1
Voltage - Supply (Vcc/Vdd): Not Required
Voltage - Load: 8V ~ 60V
Input Type: Non-Inverting
Rds On (Typ): 1Ohm
Output Configuration: Low Side
Operating Temperature: -40°C ~ 105°C (TA)
Switch Type: Latched Driver
Interface: On/Off
Number of Outputs: 2
Mounting Type: Surface Mount
Output Type: N-Channel
Package / Case: 8-SOIC (0.154", 3.90mm Width)
Packaging: Cut Tape (CT)
Description: IC PWR DRIVER N-CHAN 1:1 8SOIC
Fault Protection: Over Temperature, UVLO
Supplier Device Package: 8-SOIC
Ratio - Input:Output: 1:1
Voltage - Supply (Vcc/Vdd): Not Required
Voltage - Load: 8V ~ 60V
Input Type: Non-Inverting
Rds On (Typ): 1Ohm
Output Configuration: Low Side
Operating Temperature: -40°C ~ 105°C (TA)
Switch Type: Latched Driver
Interface: On/Off
Number of Outputs: 2
Mounting Type: Surface Mount
Output Type: N-Channel
Package / Case: 8-SOIC (0.154", 3.90mm Width)
Packaging: Cut Tape (CT)
на замовлення 47216 шт:
термін постачання 21-31 дні (днів)
| Кількість | Ціна без ПДВ |
|---|---|
| 2+ | 179.00 грн |
| 10+ | 108.35 грн |
| 25+ | 91.49 грн |
| 100+ | 68.01 грн |
| 250+ | 59.25 грн |
| 500+ | 53.86 грн |
| 1000+ | 48.53 грн |
| FAN3241TMX |
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Виробник: onsemi
Description: IC PWR DRIVER N-CHAN 1:1 8SOIC
Part Status: Active
Fault Protection: Over Temperature, UVLO
Supplier Device Package: 8-SOIC
Ratio - Input:Output: 1:1
Voltage - Supply (Vcc/Vdd): Not Required
Voltage - Load: 8V ~ 60V
Input Type: Non-Inverting
Rds On (Typ): 1Ohm
Output Configuration: Low Side
Operating Temperature: -40°C ~ 105°C (TA)
Switch Type: Latched Driver
Interface: On/Off
Number of Outputs: 2
Mounting Type: Surface Mount
Output Type: N-Channel
Package / Case: 8-SOIC (0.154", 3.90mm Width)
Packaging: Cut Tape (CT)
Description: IC PWR DRIVER N-CHAN 1:1 8SOIC
Part Status: Active
Fault Protection: Over Temperature, UVLO
Supplier Device Package: 8-SOIC
Ratio - Input:Output: 1:1
Voltage - Supply (Vcc/Vdd): Not Required
Voltage - Load: 8V ~ 60V
Input Type: Non-Inverting
Rds On (Typ): 1Ohm
Output Configuration: Low Side
Operating Temperature: -40°C ~ 105°C (TA)
Switch Type: Latched Driver
Interface: On/Off
Number of Outputs: 2
Mounting Type: Surface Mount
Output Type: N-Channel
Package / Case: 8-SOIC (0.154", 3.90mm Width)
Packaging: Cut Tape (CT)
на замовлення 2485 шт:
термін постачання 21-31 дні (днів)
| Кількість | Ціна без ПДВ |
|---|---|
| 2+ | 165.06 грн |
| 10+ | 99.47 грн |
| 25+ | 83.87 грн |
| 100+ | 62.15 грн |
| 250+ | 54.02 грн |
| 500+ | 49.01 грн |
| 1000+ | 44.09 грн |
| NCL30160GEVB |
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Виробник: onsemi
Description: EVAL BOARD FOR NCL30160
Contents: Board(s)
Part Status: Active
Outputs and Type: 1 Non-Isolated Output
Supplied Contents: Board(s)
Utilized IC / Part: NCL30160
Current - Output / Channel: 1A
Voltage - Input: 6.3V ~ 40V
Features: Dimmable
Packaging: Bulk
Description: EVAL BOARD FOR NCL30160
Contents: Board(s)
Part Status: Active
Outputs and Type: 1 Non-Isolated Output
Supplied Contents: Board(s)
Utilized IC / Part: NCL30160
Current - Output / Channel: 1A
Voltage - Input: 6.3V ~ 40V
Features: Dimmable
Packaging: Bulk
на замовлення 1 шт:
термін постачання 21-31 дні (днів)
| Кількість | Ціна без ПДВ |
|---|---|
| 1+ | 6101.62 грн |
| 1N4148-T50R |
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Виробник: onsemi
Description: DIODE STANDARD 100V 200MA DO35
Packaging: Cut Tape (CT)
Package / Case: DO-204AH, DO-35, Axial
Mounting Type: Through Hole
Speed: Small Signal =< 200mA (Io), Any Speed
Reverse Recovery Time (trr): 4 ns
Technology: Standard
Capacitance @ Vr, F: 4pF @ 0V, 1MHz
Current - Average Rectified (Io): 200mA
Supplier Device Package: DO-35
Operating Temperature - Junction: -55°C ~ 175°C
Part Status: Active
Voltage - DC Reverse (Vr) (Max): 100 V
Voltage - Forward (Vf) (Max) @ If: 1 V @ 10 mA
Current - Reverse Leakage @ Vr: 5 µA @ 75 V
Description: DIODE STANDARD 100V 200MA DO35
Packaging: Cut Tape (CT)
Package / Case: DO-204AH, DO-35, Axial
Mounting Type: Through Hole
Speed: Small Signal =< 200mA (Io), Any Speed
Reverse Recovery Time (trr): 4 ns
Technology: Standard
Capacitance @ Vr, F: 4pF @ 0V, 1MHz
Current - Average Rectified (Io): 200mA
Supplier Device Package: DO-35
Operating Temperature - Junction: -55°C ~ 175°C
Part Status: Active
Voltage - DC Reverse (Vr) (Max): 100 V
Voltage - Forward (Vf) (Max) @ If: 1 V @ 10 mA
Current - Reverse Leakage @ Vr: 5 µA @ 75 V
на замовлення 34977 шт:
термін постачання 21-31 дні (днів)
| Кількість | Ціна без ПДВ |
|---|---|
| 45+ | 6.97 грн |
| 73+ | 4.10 грн |
| 118+ | 2.54 грн |
| 500+ | 1.71 грн |
| 1000+ | 1.49 грн |
| 2000+ | 1.31 грн |
| 5000+ | 1.09 грн |
| 4N32SR2M |
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Виробник: onsemi
Description: OPTOISO 4.17KV DARL W/BASE 6-SMD
Packaging: Cut Tape (CT)
Package / Case: 6-SMD, Gull Wing
Output Type: Darlington with Base
Mounting Type: Surface Mount
Operating Temperature: -40°C ~ 100°C
Voltage - Forward (Vf) (Typ): 1.2V
Input Type: DC
Current - Output / Channel: 150mA
Voltage - Isolation: 4170Vrms
Current Transfer Ratio (Min): 500% @ 10mA
Vce Saturation (Max): 1V
Supplier Device Package: 6-SMD
Voltage - Output (Max): 30V
Turn On / Turn Off Time (Typ): 5µs, 100µs (Max)
Part Status: Active
Number of Channels: 1
Current - DC Forward (If) (Max): 80 mA
Description: OPTOISO 4.17KV DARL W/BASE 6-SMD
Packaging: Cut Tape (CT)
Package / Case: 6-SMD, Gull Wing
Output Type: Darlington with Base
Mounting Type: Surface Mount
Operating Temperature: -40°C ~ 100°C
Voltage - Forward (Vf) (Typ): 1.2V
Input Type: DC
Current - Output / Channel: 150mA
Voltage - Isolation: 4170Vrms
Current Transfer Ratio (Min): 500% @ 10mA
Vce Saturation (Max): 1V
Supplier Device Package: 6-SMD
Voltage - Output (Max): 30V
Turn On / Turn Off Time (Typ): 5µs, 100µs (Max)
Part Status: Active
Number of Channels: 1
Current - DC Forward (If) (Max): 80 mA
на замовлення 11788 шт:
термін постачання 21-31 дні (днів)
| Кількість | Ціна без ПДВ |
|---|---|
| 6+ | 57.34 грн |
| 10+ | 38.65 грн |
| 100+ | 28.30 грн |
| 500+ | 22.24 грн |
| BC516-D27Z |
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Виробник: onsemi
Description: TRANS PNP DARL 30V 1A TO-92-3
Packaging: Cut Tape (CT)
Package / Case: TO-226-3, TO-92-3 (TO-226AA) Formed Leads
Mounting Type: Through Hole
Transistor Type: PNP - Darlington
Operating Temperature: -55°C ~ 150°C (TJ)
Vce Saturation (Max) @ Ib, Ic: 1V @ 100µA, 100mA
Current - Collector Cutoff (Max): 100nA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce: 30000 @ 20mA, 2V
Frequency - Transition: 200MHz
Supplier Device Package: TO-92-3
Part Status: Active
Current - Collector (Ic) (Max): 1 A
Voltage - Collector Emitter Breakdown (Max): 30 V
Power - Max: 625 mW
Description: TRANS PNP DARL 30V 1A TO-92-3
Packaging: Cut Tape (CT)
Package / Case: TO-226-3, TO-92-3 (TO-226AA) Formed Leads
Mounting Type: Through Hole
Transistor Type: PNP - Darlington
Operating Temperature: -55°C ~ 150°C (TJ)
Vce Saturation (Max) @ Ib, Ic: 1V @ 100µA, 100mA
Current - Collector Cutoff (Max): 100nA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce: 30000 @ 20mA, 2V
Frequency - Transition: 200MHz
Supplier Device Package: TO-92-3
Part Status: Active
Current - Collector (Ic) (Max): 1 A
Voltage - Collector Emitter Breakdown (Max): 30 V
Power - Max: 625 mW
на замовлення 5264 шт:
термін постачання 21-31 дні (днів)
| Кількість | Ціна без ПДВ |
|---|---|
| 11+ | 30.22 грн |
| 17+ | 17.69 грн |
| 100+ | 11.12 грн |
| 500+ | 7.78 грн |
| 1000+ | 6.92 грн |
| FDD2670 |
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Виробник: onsemi
Description: MOSFET N-CH 200V 3.6A TO252
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Packaging: Cut Tape (CT)
Input Capacitance (Ciss) (Max) @ Vds: 1228 pF @ 100 V
Gate Charge (Qg) (Max) @ Vgs: 43 nC @ 10 V
Drain to Source Voltage (Vdss): 200 V
Vgs (Max): ±20V
Drive Voltage (Max Rds On, Min Rds On): 10V
Supplier Device Package: TO-252AA
Vgs(th) (Max) @ Id: 4.5V @ 250µA
Power Dissipation (Max): 3.2W (Ta), 70W (Tc)
Rds On (Max) @ Id, Vgs: 130mOhm @ 3.6A, 10V
Current - Continuous Drain (Id) @ 25°C: 3.6A (Ta)
FET Type: N-Channel
Description: MOSFET N-CH 200V 3.6A TO252
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Packaging: Cut Tape (CT)
Input Capacitance (Ciss) (Max) @ Vds: 1228 pF @ 100 V
Gate Charge (Qg) (Max) @ Vgs: 43 nC @ 10 V
Drain to Source Voltage (Vdss): 200 V
Vgs (Max): ±20V
Drive Voltage (Max Rds On, Min Rds On): 10V
Supplier Device Package: TO-252AA
Vgs(th) (Max) @ Id: 4.5V @ 250µA
Power Dissipation (Max): 3.2W (Ta), 70W (Tc)
Rds On (Max) @ Id, Vgs: 130mOhm @ 3.6A, 10V
Current - Continuous Drain (Id) @ 25°C: 3.6A (Ta)
FET Type: N-Channel
на замовлення 1133 шт:
термін постачання 21-31 дні (днів)
| Кількість | Ціна без ПДВ |
|---|---|
| 3+ | 152.66 грн |
| 10+ | 102.53 грн |
| 100+ | 73.16 грн |
| 500+ | 55.15 грн |
| 1000+ | 54.93 грн |
| FDD3670 |
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Виробник: onsemi
Description: MOSFET N-CH 100V 34A TO252
Packaging: Cut Tape (CT)
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 34A (Ta)
Rds On (Max) @ Id, Vgs: 32mOhm @ 7.3A, 10V
Power Dissipation (Max): 3.8W (Ta), 83W (Tc)
Vgs(th) (Max) @ Id: 4V @ 250µA
Supplier Device Package: TO-252AA
Drive Voltage (Max Rds On, Min Rds On): 6V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 100 V
Gate Charge (Qg) (Max) @ Vgs: 80 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 2490 pF @ 50 V
Description: MOSFET N-CH 100V 34A TO252
Packaging: Cut Tape (CT)
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 34A (Ta)
Rds On (Max) @ Id, Vgs: 32mOhm @ 7.3A, 10V
Power Dissipation (Max): 3.8W (Ta), 83W (Tc)
Vgs(th) (Max) @ Id: 4V @ 250µA
Supplier Device Package: TO-252AA
Drive Voltage (Max Rds On, Min Rds On): 6V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 100 V
Gate Charge (Qg) (Max) @ Vgs: 80 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 2490 pF @ 50 V
на замовлення 1477 шт:
термін постачання 21-31 дні (днів)
| Кількість | Ціна без ПДВ |
|---|---|
| 2+ | 168.93 грн |
| 10+ | 104.17 грн |
| 100+ | 71.02 грн |
| 500+ | 53.36 грн |
| 1000+ | 49.09 грн |
| FDD3680 |
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Виробник: onsemi
Description: MOSFET N-CH 100V 25A TO252
Input Capacitance (Ciss) (Max) @ Vds: 1735 pF @ 50 V
Gate Charge (Qg) (Max) @ Vgs: 53 nC @ 10 V
Drain to Source Voltage (Vdss): 100 V
Vgs (Max): ±20V
Drive Voltage (Max Rds On, Min Rds On): 6V, 10V
Part Status: Obsolete
Supplier Device Package: TO-252AA
Vgs(th) (Max) @ Id: 4V @ 250µA
Power Dissipation (Max): 68W (Ta)
Rds On (Max) @ Id, Vgs: 46mOhm @ 6.1A, 10V
Current - Continuous Drain (Id) @ 25°C: 25A (Ta)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 175°C (TJ)
Mounting Type: Surface Mount
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Packaging: Cut Tape (CT)
Description: MOSFET N-CH 100V 25A TO252
Input Capacitance (Ciss) (Max) @ Vds: 1735 pF @ 50 V
Gate Charge (Qg) (Max) @ Vgs: 53 nC @ 10 V
Drain to Source Voltage (Vdss): 100 V
Vgs (Max): ±20V
Drive Voltage (Max Rds On, Min Rds On): 6V, 10V
Part Status: Obsolete
Supplier Device Package: TO-252AA
Vgs(th) (Max) @ Id: 4V @ 250µA
Power Dissipation (Max): 68W (Ta)
Rds On (Max) @ Id, Vgs: 46mOhm @ 6.1A, 10V
Current - Continuous Drain (Id) @ 25°C: 25A (Ta)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 175°C (TJ)
Mounting Type: Surface Mount
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Packaging: Cut Tape (CT)
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| FDD5670 |
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Виробник: onsemi
Description: MOSFET N-CH 60V 52A TO252
Input Capacitance (Ciss) (Max) @ Vds: 2739 pF @ 15 V
Gate Charge (Qg) (Max) @ Vgs: 73 nC @ 10 V
Drain to Source Voltage (Vdss): 60 V
Vgs (Max): ±20V
Drive Voltage (Max Rds On, Min Rds On): 6V, 10V
Supplier Device Package: TO-252AA
Vgs(th) (Max) @ Id: 4V @ 250µA
Power Dissipation (Max): 3.8W (Ta), 83W (Tc)
Rds On (Max) @ Id, Vgs: 15mOhm @ 10A, 10V
Current - Continuous Drain (Id) @ 25°C: 52A (Ta)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 175°C (TJ)
Mounting Type: Surface Mount
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Packaging: Cut Tape (CT)
Description: MOSFET N-CH 60V 52A TO252
Input Capacitance (Ciss) (Max) @ Vds: 2739 pF @ 15 V
Gate Charge (Qg) (Max) @ Vgs: 73 nC @ 10 V
Drain to Source Voltage (Vdss): 60 V
Vgs (Max): ±20V
Drive Voltage (Max Rds On, Min Rds On): 6V, 10V
Supplier Device Package: TO-252AA
Vgs(th) (Max) @ Id: 4V @ 250µA
Power Dissipation (Max): 3.8W (Ta), 83W (Tc)
Rds On (Max) @ Id, Vgs: 15mOhm @ 10A, 10V
Current - Continuous Drain (Id) @ 25°C: 52A (Ta)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 175°C (TJ)
Mounting Type: Surface Mount
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Packaging: Cut Tape (CT)
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| FDLL485B |
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Виробник: onsemi
Description: DIODE STANDARD 180V 200MA SOD80
Packaging: Cut Tape (CT)
Package / Case: DO-213AC, MINI-MELF, SOD-80
Mounting Type: Surface Mount
Speed: Small Signal =< 200mA (Io), Any Speed
Technology: Standard
Capacitance @ Vr, F: 6pF @ 0V, 1MHz
Current - Average Rectified (Io): 200mA
Supplier Device Package: SOD-80
Operating Temperature - Junction: -65°C ~ 200°C
Part Status: Active
Voltage - DC Reverse (Vr) (Max): 180 V
Voltage - Forward (Vf) (Max) @ If: 1 V @ 100 mA
Current - Reverse Leakage @ Vr: 25 nA @ 180 V
Description: DIODE STANDARD 180V 200MA SOD80
Packaging: Cut Tape (CT)
Package / Case: DO-213AC, MINI-MELF, SOD-80
Mounting Type: Surface Mount
Speed: Small Signal =< 200mA (Io), Any Speed
Technology: Standard
Capacitance @ Vr, F: 6pF @ 0V, 1MHz
Current - Average Rectified (Io): 200mA
Supplier Device Package: SOD-80
Operating Temperature - Junction: -65°C ~ 200°C
Part Status: Active
Voltage - DC Reverse (Vr) (Max): 180 V
Voltage - Forward (Vf) (Max) @ If: 1 V @ 100 mA
Current - Reverse Leakage @ Vr: 25 nA @ 180 V
на замовлення 1814 шт:
термін постачання 21-31 дні (днів)
| Кількість | Ціна без ПДВ |
|---|---|
| 18+ | 17.82 грн |
| 29+ | 10.52 грн |
| 100+ | 6.54 грн |
| 500+ | 4.50 грн |
| 1000+ | 3.97 грн |
| FDMS8090 |
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Виробник: onsemi
Description: MOSFET 2N-CH 100V 10A 8MLP
Packaging: Cut Tape (CT)
Package / Case: 8-PowerWDFN
Mounting Type: Surface Mount
Configuration: 2 N-Channel (Dual)
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
Power - Max: 2.2W
Drain to Source Voltage (Vdss): 100V
Current - Continuous Drain (Id) @ 25°C: 10A
Input Capacitance (Ciss) (Max) @ Vds: 1800pF @ 50V
Rds On (Max) @ Id, Vgs: 13mOhm @ 10A, 10V
Gate Charge (Qg) (Max) @ Vgs: 27nC @ 10V
FET Feature: Logic Level Gate
Vgs(th) (Max) @ Id: 4V @ 250µA
Supplier Device Package: 8-MLP (5x6), Power56
Description: MOSFET 2N-CH 100V 10A 8MLP
Packaging: Cut Tape (CT)
Package / Case: 8-PowerWDFN
Mounting Type: Surface Mount
Configuration: 2 N-Channel (Dual)
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
Power - Max: 2.2W
Drain to Source Voltage (Vdss): 100V
Current - Continuous Drain (Id) @ 25°C: 10A
Input Capacitance (Ciss) (Max) @ Vds: 1800pF @ 50V
Rds On (Max) @ Id, Vgs: 13mOhm @ 10A, 10V
Gate Charge (Qg) (Max) @ Vgs: 27nC @ 10V
FET Feature: Logic Level Gate
Vgs(th) (Max) @ Id: 4V @ 250µA
Supplier Device Package: 8-MLP (5x6), Power56
на замовлення 946 шт:
термін постачання 21-31 дні (днів)
| Кількість | Ціна без ПДВ |
|---|---|
| 1+ | 537.01 грн |
| 10+ | 350.34 грн |
| 100+ | 255.75 грн |
| 500+ | 231.97 грн |
| FJT44KTF |
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Виробник: onsemi
Description: TRANS NPN 400V 0.3A SOT-223-4
Packaging: Cut Tape (CT)
Package / Case: TO-261-4, TO-261AA
Mounting Type: Surface Mount
Transistor Type: NPN
Operating Temperature: 150°C (TJ)
Vce Saturation (Max) @ Ib, Ic: 750mV @ 5mA, 50mA
Current - Collector Cutoff (Max): 500nA
DC Current Gain (hFE) (Min) @ Ic, Vce: 50 @ 10mA, 10V
Supplier Device Package: SOT-223-4
Part Status: Active
Current - Collector (Ic) (Max): 300 mA
Voltage - Collector Emitter Breakdown (Max): 400 V
Power - Max: 2 W
Description: TRANS NPN 400V 0.3A SOT-223-4
Packaging: Cut Tape (CT)
Package / Case: TO-261-4, TO-261AA
Mounting Type: Surface Mount
Transistor Type: NPN
Operating Temperature: 150°C (TJ)
Vce Saturation (Max) @ Ib, Ic: 750mV @ 5mA, 50mA
Current - Collector Cutoff (Max): 500nA
DC Current Gain (hFE) (Min) @ Ic, Vce: 50 @ 10mA, 10V
Supplier Device Package: SOT-223-4
Part Status: Active
Current - Collector (Ic) (Max): 300 mA
Voltage - Collector Emitter Breakdown (Max): 400 V
Power - Max: 2 W
на замовлення 2221 шт:
термін постачання 21-31 дні (днів)
| Кількість | Ціна без ПДВ |
|---|---|
| 7+ | 51.14 грн |
| 10+ | 30.67 грн |
| 100+ | 19.80 грн |
| 500+ | 14.17 грн |
| 1000+ | 12.75 грн |
| FJV992FMTF |
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Виробник: onsemi
Description: TRANS PNP 120V 0.05A SOT-23-3
Power - Max: 300 mW
Voltage - Collector Emitter Breakdown (Max): 120 V
Current - Collector (Ic) (Max): 50 mA
Supplier Device Package: SOT-23-3
Frequency - Transition: 50MHz
DC Current Gain (hFE) (Min) @ Ic, Vce: 300 @ 1mA, 6V
Vce Saturation (Max) @ Ib, Ic: 300mV @ 1mA, 10mA
Operating Temperature: 150°C (TJ)
Transistor Type: PNP
Mounting Type: Surface Mount
Package / Case: TO-236-3, SC-59, SOT-23-3
Packaging: Cut Tape (CT)
Description: TRANS PNP 120V 0.05A SOT-23-3
Power - Max: 300 mW
Voltage - Collector Emitter Breakdown (Max): 120 V
Current - Collector (Ic) (Max): 50 mA
Supplier Device Package: SOT-23-3
Frequency - Transition: 50MHz
DC Current Gain (hFE) (Min) @ Ic, Vce: 300 @ 1mA, 6V
Vce Saturation (Max) @ Ib, Ic: 300mV @ 1mA, 10mA
Operating Temperature: 150°C (TJ)
Transistor Type: PNP
Mounting Type: Surface Mount
Package / Case: TO-236-3, SC-59, SOT-23-3
Packaging: Cut Tape (CT)
на замовлення 92907 шт:
термін постачання 21-31 дні (днів)
| Кількість | Ціна без ПДВ |
|---|---|
| 20+ | 16.27 грн |
| 31+ | 9.70 грн |
| 100+ | 6.04 грн |
| 500+ | 4.15 грн |
| 1000+ | 3.65 грн |
| FQD2N90TM |
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Виробник: onsemi
Description: MOSFET N-CH 900V 1.7A DPAK
Packaging: Cut Tape (CT)
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 1.7A (Tc)
Rds On (Max) @ Id, Vgs: 7.2Ohm @ 850mA, 10V
Power Dissipation (Max): 2.5W (Ta), 50W (Tc)
Vgs(th) (Max) @ Id: 5V @ 250µA
Supplier Device Package: TO-252AA
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±30V
Drain to Source Voltage (Vdss): 900 V
Gate Charge (Qg) (Max) @ Vgs: 15 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 500 pF @ 25 V
Description: MOSFET N-CH 900V 1.7A DPAK
Packaging: Cut Tape (CT)
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 1.7A (Tc)
Rds On (Max) @ Id, Vgs: 7.2Ohm @ 850mA, 10V
Power Dissipation (Max): 2.5W (Ta), 50W (Tc)
Vgs(th) (Max) @ Id: 5V @ 250µA
Supplier Device Package: TO-252AA
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±30V
Drain to Source Voltage (Vdss): 900 V
Gate Charge (Qg) (Max) @ Vgs: 15 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 500 pF @ 25 V
на замовлення 6691 шт:
термін постачання 21-31 дні (днів)
| Кількість | Ціна без ПДВ |
|---|---|
| 3+ | 151.11 грн |
| 10+ | 92.83 грн |
| 100+ | 62.82 грн |
| 500+ | 46.90 грн |
| 1000+ | 43.02 грн |
| FSA2267AL10X |
Виробник: onsemi
Description: IC SWITCH DUAL SPDT 10MICROPAK
Number of Channels: 2
Multiplexer/Demultiplexer Circuit: 2:1
Switch Circuit: SPDT
Voltage - Supply, Single (V+): 2.3V ~ 4.3V
Supplier Device Package: 10-MicroPak™
-3db Bandwidth: 45MHz
On-State Resistance (Max): 350mOhm (Typ)
Applications: Audio
Operating Temperature: -40°C ~ 85°C (TA)
Mounting Type: Surface Mount
Package / Case: 10-UFQFN Exposed Pad
Packaging: Cut Tape (CT)
Description: IC SWITCH DUAL SPDT 10MICROPAK
Number of Channels: 2
Multiplexer/Demultiplexer Circuit: 2:1
Switch Circuit: SPDT
Voltage - Supply, Single (V+): 2.3V ~ 4.3V
Supplier Device Package: 10-MicroPak™
-3db Bandwidth: 45MHz
On-State Resistance (Max): 350mOhm (Typ)
Applications: Audio
Operating Temperature: -40°C ~ 85°C (TA)
Mounting Type: Surface Mount
Package / Case: 10-UFQFN Exposed Pad
Packaging: Cut Tape (CT)
на замовлення 1623 шт:
термін постачання 21-31 дні (днів)
| Кількість | Ціна без ПДВ |
|---|---|
| 4+ | 99.19 грн |
| 10+ | 58.28 грн |
| 25+ | 48.59 грн |
| 100+ | 35.34 грн |
| 250+ | 30.28 грн |
| 500+ | 27.17 грн |
| 1000+ | 24.16 грн |
| FSA66P5X |
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Виробник: onsemi
Description: IC SWITCH SPST-NO X 1 SC70-5
Number of Circuits: 1
Channel Capacitance (CS(off), CD(off)): 6pF
Multiplexer/Demultiplexer Circuit: 1:1
Switch Circuit: SPST - NO
Charge Injection: 0.05pC
Voltage - Supply, Single (V+): 1.65V ~ 5.5V
Supplier Device Package: SC-70-5
-3db Bandwidth: 250MHz
Operating Temperature: -40°C ~ 85°C (TA)
Mounting Type: Surface Mount
Package / Case: 5-TSSOP, SC-70-5, SOT-353
Packaging: Cut Tape (CT)
Description: IC SWITCH SPST-NO X 1 SC70-5
Number of Circuits: 1
Channel Capacitance (CS(off), CD(off)): 6pF
Multiplexer/Demultiplexer Circuit: 1:1
Switch Circuit: SPST - NO
Charge Injection: 0.05pC
Voltage - Supply, Single (V+): 1.65V ~ 5.5V
Supplier Device Package: SC-70-5
-3db Bandwidth: 250MHz
Operating Temperature: -40°C ~ 85°C (TA)
Mounting Type: Surface Mount
Package / Case: 5-TSSOP, SC-70-5, SOT-353
Packaging: Cut Tape (CT)
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| FSB649 |
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Виробник: onsemi
Description: TRANS NPN 25V 3A SOT-23-3
Packaging: Cut Tape (CT)
Package / Case: TO-236-3, SC-59, SOT-23-3
Mounting Type: Surface Mount
Transistor Type: NPN
Operating Temperature: -55°C ~ 150°C (TJ)
Vce Saturation (Max) @ Ib, Ic: 600mV @ 300mA, 3A
Current - Collector Cutoff (Max): 100nA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce: 100 @ 1A, 2V
Frequency - Transition: 150MHz
Supplier Device Package: SOT-23-3
Part Status: Active
Current - Collector (Ic) (Max): 3 A
Voltage - Collector Emitter Breakdown (Max): 25 V
Power - Max: 500 mW
Description: TRANS NPN 25V 3A SOT-23-3
Packaging: Cut Tape (CT)
Package / Case: TO-236-3, SC-59, SOT-23-3
Mounting Type: Surface Mount
Transistor Type: NPN
Operating Temperature: -55°C ~ 150°C (TJ)
Vce Saturation (Max) @ Ib, Ic: 600mV @ 300mA, 3A
Current - Collector Cutoff (Max): 100nA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce: 100 @ 1A, 2V
Frequency - Transition: 150MHz
Supplier Device Package: SOT-23-3
Part Status: Active
Current - Collector (Ic) (Max): 3 A
Voltage - Collector Emitter Breakdown (Max): 25 V
Power - Max: 500 mW
на замовлення 2868 шт:
термін постачання 21-31 дні (днів)
| Кількість | Ціна без ПДВ |
|---|---|
| 8+ | 44.17 грн |
| 12+ | 26.04 грн |
| 100+ | 16.73 грн |
| 500+ | 11.91 грн |
| 1000+ | 10.68 грн |
| HCPL0701R2 |
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Виробник: onsemi
Description: OPTOISO 2.5KV DARL W/BASE 8-SOIC
Current - DC Forward (If) (Max): 20 mA
Number of Channels: 1
Part Status: Active
Turn On / Turn Off Time (Typ): 300ns, 1.6µs
Voltage - Output (Max): 18V
Supplier Device Package: 8-SOIC
Current Transfer Ratio (Max): 2600% @ 1.6mA
Current Transfer Ratio (Min): 500% @ 1.6mA
Voltage - Isolation: 2500Vrms
Current - Output / Channel: 60mA
Input Type: DC
Voltage - Forward (Vf) (Typ): 1.25V
Operating Temperature: -40°C ~ 85°C
Mounting Type: Surface Mount
Output Type: Darlington with Base
Package / Case: 8-SOIC (0.154", 3.90mm Width)
Packaging: Cut Tape (CT)
Description: OPTOISO 2.5KV DARL W/BASE 8-SOIC
Current - DC Forward (If) (Max): 20 mA
Number of Channels: 1
Part Status: Active
Turn On / Turn Off Time (Typ): 300ns, 1.6µs
Voltage - Output (Max): 18V
Supplier Device Package: 8-SOIC
Current Transfer Ratio (Max): 2600% @ 1.6mA
Current Transfer Ratio (Min): 500% @ 1.6mA
Voltage - Isolation: 2500Vrms
Current - Output / Channel: 60mA
Input Type: DC
Voltage - Forward (Vf) (Typ): 1.25V
Operating Temperature: -40°C ~ 85°C
Mounting Type: Surface Mount
Output Type: Darlington with Base
Package / Case: 8-SOIC (0.154", 3.90mm Width)
Packaging: Cut Tape (CT)
на замовлення 2203 шт:
термін постачання 21-31 дні (днів)
| Кількість | Ціна без ПДВ |
|---|---|
| 2+ | 181.33 грн |
| 10+ | 126.56 грн |
| 100+ | 98.00 грн |
| 500+ | 80.15 грн |
| 1000+ | 76.31 грн |
| HGTD1N120BNS9A |
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Виробник: onsemi
Description: IGBT NPT 1200V 5.3A TO-252AA
Packaging: Cut Tape (CT)
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Input Type: Standard
Vce(on) (Max) @ Vge, Ic: 2.9V @ 15V, 1A
Supplier Device Package: TO-252AA
IGBT Type: NPT
Td (on/off) @ 25°C: 15ns/67ns
Switching Energy: 70µJ (on), 90µJ (off)
Test Condition: 960V, 1A, 82Ohm, 15V
Gate Charge: 14 nC
Part Status: Active
Current - Collector (Ic) (Max): 5.3 A
Voltage - Collector Emitter Breakdown (Max): 1200 V
Current - Collector Pulsed (Icm): 6 A
Power - Max: 60 W
Description: IGBT NPT 1200V 5.3A TO-252AA
Packaging: Cut Tape (CT)
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Input Type: Standard
Vce(on) (Max) @ Vge, Ic: 2.9V @ 15V, 1A
Supplier Device Package: TO-252AA
IGBT Type: NPT
Td (on/off) @ 25°C: 15ns/67ns
Switching Energy: 70µJ (on), 90µJ (off)
Test Condition: 960V, 1A, 82Ohm, 15V
Gate Charge: 14 nC
Part Status: Active
Current - Collector (Ic) (Max): 5.3 A
Voltage - Collector Emitter Breakdown (Max): 1200 V
Current - Collector Pulsed (Icm): 6 A
Power - Max: 60 W
на замовлення 1323 шт:
термін постачання 21-31 дні (днів)
| Кількість | Ціна без ПДВ |
|---|---|
| 2+ | 155.76 грн |
| 10+ | 95.96 грн |
| 100+ | 65.08 грн |
| 500+ | 48.68 грн |
| 1000+ | 44.69 грн |
| KSB834WYTM |
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Виробник: onsemi
Description: TRANS PNP 60V 3A D2PAK
Power - Max: 1.5 W
Voltage - Collector Emitter Breakdown (Max): 60 V
Current - Collector (Ic) (Max): 3 A
Part Status: Active
Supplier Device Package: TO-263 (D2Pak)
Frequency - Transition: 9MHz
DC Current Gain (hFE) (Min) @ Ic, Vce: 100 @ 5mA, 5V
Current - Collector Cutoff (Max): 100µA (ICBO)
Vce Saturation (Max) @ Ib, Ic: 1V @ 300mA, 3A
Operating Temperature: 150°C (TJ)
Transistor Type: PNP
Mounting Type: Surface Mount
Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
Packaging: Cut Tape (CT)
Description: TRANS PNP 60V 3A D2PAK
Power - Max: 1.5 W
Voltage - Collector Emitter Breakdown (Max): 60 V
Current - Collector (Ic) (Max): 3 A
Part Status: Active
Supplier Device Package: TO-263 (D2Pak)
Frequency - Transition: 9MHz
DC Current Gain (hFE) (Min) @ Ic, Vce: 100 @ 5mA, 5V
Current - Collector Cutoff (Max): 100µA (ICBO)
Vce Saturation (Max) @ Ib, Ic: 1V @ 300mA, 3A
Operating Temperature: 150°C (TJ)
Transistor Type: PNP
Mounting Type: Surface Mount
Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
Packaging: Cut Tape (CT)
на замовлення 809 шт:
термін постачання 21-31 дні (днів)
| Кількість | Ціна без ПДВ |
|---|---|
| 5+ | 63.54 грн |
| 10+ | 53.06 грн |
| 100+ | 36.75 грн |
| KST5550MTF |
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Виробник: onsemi
Description: TRANS NPN 140V 0.6A SOT-23-3
Power - Max: 350 mW
Voltage - Collector Emitter Breakdown (Max): 140 V
Current - Collector (Ic) (Max): 600 mA
Part Status: Obsolete
Supplier Device Package: SOT-23-3
Frequency - Transition: 300MHz
DC Current Gain (hFE) (Min) @ Ic, Vce: 60 @ 10mA, 5V
Current - Collector Cutoff (Max): 100nA (ICBO)
Vce Saturation (Max) @ Ib, Ic: 250mV @ 5mA, 50mA
Transistor Type: NPN
Mounting Type: Surface Mount
Package / Case: TO-236-3, SC-59, SOT-23-3
Packaging: Cut Tape (CT)
Description: TRANS NPN 140V 0.6A SOT-23-3
Power - Max: 350 mW
Voltage - Collector Emitter Breakdown (Max): 140 V
Current - Collector (Ic) (Max): 600 mA
Part Status: Obsolete
Supplier Device Package: SOT-23-3
Frequency - Transition: 300MHz
DC Current Gain (hFE) (Min) @ Ic, Vce: 60 @ 10mA, 5V
Current - Collector Cutoff (Max): 100nA (ICBO)
Vce Saturation (Max) @ Ib, Ic: 250mV @ 5mA, 50mA
Transistor Type: NPN
Mounting Type: Surface Mount
Package / Case: TO-236-3, SC-59, SOT-23-3
Packaging: Cut Tape (CT)
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| MMBD2838 |
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Виробник: onsemi
Description: DIODE ARRAY GP 75V 200MA SOT23-3
Packaging: Cut Tape (CT)
Package / Case: TO-236-3, SC-59, SOT-23-3
Mounting Type: Surface Mount
Speed: Small Signal =< 200mA (Io), Any Speed
Reverse Recovery Time (trr): 4 ns
Technology: Standard
Diode Configuration: 1 Pair Common Cathode
Current - Average Rectified (Io) (per Diode): 200mA
Supplier Device Package: SOT-23-3
Operating Temperature - Junction: -55°C ~ 150°C
Voltage - DC Reverse (Vr) (Max): 75 V
Voltage - Forward (Vf) (Max) @ If: 1.2 V @ 100 mA
Current - Reverse Leakage @ Vr: 100 nA @ 50 V
Description: DIODE ARRAY GP 75V 200MA SOT23-3
Packaging: Cut Tape (CT)
Package / Case: TO-236-3, SC-59, SOT-23-3
Mounting Type: Surface Mount
Speed: Small Signal =< 200mA (Io), Any Speed
Reverse Recovery Time (trr): 4 ns
Technology: Standard
Diode Configuration: 1 Pair Common Cathode
Current - Average Rectified (Io) (per Diode): 200mA
Supplier Device Package: SOT-23-3
Operating Temperature - Junction: -55°C ~ 150°C
Voltage - DC Reverse (Vr) (Max): 75 V
Voltage - Forward (Vf) (Max) @ If: 1.2 V @ 100 mA
Current - Reverse Leakage @ Vr: 100 nA @ 50 V
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| MMBT5962 |
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Виробник: onsemi
Description: TRANS NPN 45V 0.1A SOT23-3
Packaging: Cut Tape (CT)
Package / Case: TO-236-3, SC-59, SOT-23-3
Mounting Type: Surface Mount
Transistor Type: NPN
Operating Temperature: -55°C ~ 150°C (TJ)
Vce Saturation (Max) @ Ib, Ic: 200mV @ 500µA, 10mA
Current - Collector Cutoff (Max): 2nA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce: 600 @ 10mA, 5V
Supplier Device Package: SOT-23-3
Current - Collector (Ic) (Max): 100 mA
Voltage - Collector Emitter Breakdown (Max): 45 V
Power - Max: 350 mW
Description: TRANS NPN 45V 0.1A SOT23-3
Packaging: Cut Tape (CT)
Package / Case: TO-236-3, SC-59, SOT-23-3
Mounting Type: Surface Mount
Transistor Type: NPN
Operating Temperature: -55°C ~ 150°C (TJ)
Vce Saturation (Max) @ Ib, Ic: 200mV @ 500µA, 10mA
Current - Collector Cutoff (Max): 2nA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce: 600 @ 10mA, 5V
Supplier Device Package: SOT-23-3
Current - Collector (Ic) (Max): 100 mA
Voltage - Collector Emitter Breakdown (Max): 45 V
Power - Max: 350 mW
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| MMSZ4688 |
Виробник: onsemi
Description: DIODE ZENER 4.7V 500MW SOD123
Tolerance: ±5%
Packaging: Cut Tape (CT)
Package / Case: SOD-123
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C
Voltage - Zener (Nom) (Vz): 4.7 V
Supplier Device Package: SOD-123
Part Status: Obsolete
Power - Max: 500 mW
Voltage - Forward (Vf) (Max) @ If: 900 mV @ 10 mA
Current - Reverse Leakage @ Vr: 10 µA @ 3 V
Description: DIODE ZENER 4.7V 500MW SOD123
Tolerance: ±5%
Packaging: Cut Tape (CT)
Package / Case: SOD-123
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C
Voltage - Zener (Nom) (Vz): 4.7 V
Supplier Device Package: SOD-123
Part Status: Obsolete
Power - Max: 500 mW
Voltage - Forward (Vf) (Max) @ If: 900 mV @ 10 mA
Current - Reverse Leakage @ Vr: 10 µA @ 3 V
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| MMSZ5243B |
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Виробник: onsemi
Description: DIODE ZENER 13V 500MW SOD123
Tolerance: ±5%
Packaging: Cut Tape (CT)
Package / Case: SOD-123
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C
Voltage - Zener (Nom) (Vz): 13 V
Impedance (Max) (Zzt): 13 Ohms
Supplier Device Package: SOD-123
Power - Max: 500 mW
Voltage - Forward (Vf) (Max) @ If: 900 mV @ 10 mA
Current - Reverse Leakage @ Vr: 500 nA @ 9.9 V
Description: DIODE ZENER 13V 500MW SOD123
Tolerance: ±5%
Packaging: Cut Tape (CT)
Package / Case: SOD-123
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C
Voltage - Zener (Nom) (Vz): 13 V
Impedance (Max) (Zzt): 13 Ohms
Supplier Device Package: SOD-123
Power - Max: 500 mW
Voltage - Forward (Vf) (Max) @ If: 900 mV @ 10 mA
Current - Reverse Leakage @ Vr: 500 nA @ 9.9 V
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| NC7S08P5 |
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Виробник: onsemi
Description: IC GATE AND 1CH 2-INP SC70-5
Packaging: Cut Tape (CT)
Package / Case: 5-TSSOP, SC-70-5, SOT-353
Mounting Type: Surface Mount
Logic Type: AND Gate
Operating Temperature: -40°C ~ 85°C
Voltage - Supply: 2V ~ 6V
Current - Output High, Low: 2.6mA, 2.6mA
Number of Inputs: 2
Supplier Device Package: SC-70-5
Input Logic Level - High: 1.5V
Input Logic Level - Low: 0.5V
Max Propagation Delay @ V, Max CL: 17ns @ 6V, 50pF
Number of Circuits: 1
Current - Quiescent (Max): 1 µA
Description: IC GATE AND 1CH 2-INP SC70-5
Packaging: Cut Tape (CT)
Package / Case: 5-TSSOP, SC-70-5, SOT-353
Mounting Type: Surface Mount
Logic Type: AND Gate
Operating Temperature: -40°C ~ 85°C
Voltage - Supply: 2V ~ 6V
Current - Output High, Low: 2.6mA, 2.6mA
Number of Inputs: 2
Supplier Device Package: SC-70-5
Input Logic Level - High: 1.5V
Input Logic Level - Low: 0.5V
Max Propagation Delay @ V, Max CL: 17ns @ 6V, 50pF
Number of Circuits: 1
Current - Quiescent (Max): 1 µA
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| NC7S32L6X |
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Виробник: onsemi
Description: IC GATE OR 1CH 2-INP 6MICROPAK
Packaging: Cut Tape (CT)
Package / Case: 6-UFDFN
Mounting Type: Surface Mount
Logic Type: OR Gate
Operating Temperature: -40°C ~ 85°C
Voltage - Supply: 2V ~ 6V
Current - Output High, Low: 2.6mA, 2.6mA
Number of Inputs: 2
Supplier Device Package: 6-MicroPak
Input Logic Level - High: 1.5V
Input Logic Level - Low: 0.5V
Max Propagation Delay @ V, Max CL: 17ns @ 6V, 50pF
Part Status: Obsolete
Number of Circuits: 1
Current - Quiescent (Max): 1 µA
Description: IC GATE OR 1CH 2-INP 6MICROPAK
Packaging: Cut Tape (CT)
Package / Case: 6-UFDFN
Mounting Type: Surface Mount
Logic Type: OR Gate
Operating Temperature: -40°C ~ 85°C
Voltage - Supply: 2V ~ 6V
Current - Output High, Low: 2.6mA, 2.6mA
Number of Inputs: 2
Supplier Device Package: 6-MicroPak
Input Logic Level - High: 1.5V
Input Logic Level - Low: 0.5V
Max Propagation Delay @ V, Max CL: 17ns @ 6V, 50pF
Part Status: Obsolete
Number of Circuits: 1
Current - Quiescent (Max): 1 µA
на замовлення 95000 шт:
термін постачання 21-31 дні (днів)
| Кількість | Ціна без ПДВ |
|---|---|
| 8+ | 41.85 грн |
| NC7SZ04L6X |
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Виробник: onsemi
Description: IC INVERTER 1CH 1-INP 6MICROPAK
Package / Case: 6-UFDFN
Packaging: Cut Tape (CT)
Mounting Type: Surface Mount
Current - Quiescent (Max): 2 µA
Number of Circuits: 1
Max Propagation Delay @ V, Max CL: 4.3ns @ 5V, 50pF
Supplier Device Package: 6-MicroPak
Number of Inputs: 1
Current - Output High, Low: 32mA, 32mA
Voltage - Supply: 1.65V ~ 5.5V
Operating Temperature: -40°C ~ 85°C
Logic Type: Inverter
Description: IC INVERTER 1CH 1-INP 6MICROPAK
Package / Case: 6-UFDFN
Packaging: Cut Tape (CT)
Mounting Type: Surface Mount
Current - Quiescent (Max): 2 µA
Number of Circuits: 1
Max Propagation Delay @ V, Max CL: 4.3ns @ 5V, 50pF
Supplier Device Package: 6-MicroPak
Number of Inputs: 1
Current - Output High, Low: 32mA, 32mA
Voltage - Supply: 1.65V ~ 5.5V
Operating Temperature: -40°C ~ 85°C
Logic Type: Inverter
на замовлення 261232 шт:
термін постачання 21-31 дні (днів)
| Кількість | Ціна без ПДВ |
|---|---|
| 20+ | 15.50 грн |
| 31+ | 9.92 грн |
| 35+ | 8.78 грн |
| 100+ | 7.04 грн |
| 250+ | 6.47 грн |
| 500+ | 6.12 грн |
| 1000+ | 5.74 грн |
| 2500+ | 5.57 грн |
| NC7SZ332L6X |
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Виробник: onsemi
Description: IC GATE OR 1CH 3-INP 6MICROPAK
Current - Quiescent (Max): 2 µA
Number of Circuits: 1
Max Propagation Delay @ V, Max CL: 7ns @ 5V, 50pF
Supplier Device Package: 6-MicroPak
Number of Inputs: 3
Current - Output High, Low: 32mA, 32mA
Voltage - Supply: 1.65V ~ 5.5V
Operating Temperature: -40°C ~ 85°C
Logic Type: OR Gate
Mounting Type: Surface Mount
Package / Case: 6-UFDFN
Packaging: Cut Tape (CT)
Description: IC GATE OR 1CH 3-INP 6MICROPAK
Current - Quiescent (Max): 2 µA
Number of Circuits: 1
Max Propagation Delay @ V, Max CL: 7ns @ 5V, 50pF
Supplier Device Package: 6-MicroPak
Number of Inputs: 3
Current - Output High, Low: 32mA, 32mA
Voltage - Supply: 1.65V ~ 5.5V
Operating Temperature: -40°C ~ 85°C
Logic Type: OR Gate
Mounting Type: Surface Mount
Package / Case: 6-UFDFN
Packaging: Cut Tape (CT)
на замовлення 10000 шт:
термін постачання 21-31 дні (днів)
| Кількість | Ціна без ПДВ |
|---|---|
| 8+ | 41.85 грн |
| NZT44H8 |
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Виробник: onsemi
Description: TRANS NPN 60V 8A SOT223-4
Power - Max: 1.5 W
Voltage - Collector Emitter Breakdown (Max): 60 V
Current - Collector (Ic) (Max): 8 A
Part Status: Obsolete
Supplier Device Package: SOT-223-4
Frequency - Transition: 50MHz
DC Current Gain (hFE) (Min) @ Ic, Vce: 40 @ 4A, 1V
Current - Collector Cutoff (Max): 10µA (ICBO)
Vce Saturation (Max) @ Ib, Ic: 1V @ 400mA, 8A
Operating Temperature: -55°C ~ 150°C (TJ)
Transistor Type: NPN
Mounting Type: Surface Mount
Package / Case: TO-261-4, TO-261AA
Packaging: Cut Tape (CT)
Description: TRANS NPN 60V 8A SOT223-4
Power - Max: 1.5 W
Voltage - Collector Emitter Breakdown (Max): 60 V
Current - Collector (Ic) (Max): 8 A
Part Status: Obsolete
Supplier Device Package: SOT-223-4
Frequency - Transition: 50MHz
DC Current Gain (hFE) (Min) @ Ic, Vce: 40 @ 4A, 1V
Current - Collector Cutoff (Max): 10µA (ICBO)
Vce Saturation (Max) @ Ib, Ic: 1V @ 400mA, 8A
Operating Temperature: -55°C ~ 150°C (TJ)
Transistor Type: NPN
Mounting Type: Surface Mount
Package / Case: TO-261-4, TO-261AA
Packaging: Cut Tape (CT)
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| NZT45H8 |
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Виробник: onsemi
Description: TRANS PNP 60V 8A SOT223-4
Power - Max: 1.5 W
Voltage - Collector Emitter Breakdown (Max): 60 V
Current - Collector (Ic) (Max): 8 A
Part Status: Obsolete
Supplier Device Package: SOT-223-4
Frequency - Transition: 40MHz
DC Current Gain (hFE) (Min) @ Ic, Vce: 40 @ 4A, 1V
Current - Collector Cutoff (Max): 10µA (ICBO)
Vce Saturation (Max) @ Ib, Ic: 1V @ 400mA, 8A
Operating Temperature: -55°C ~ 150°C (TJ)
Transistor Type: PNP
Mounting Type: Surface Mount
Package / Case: TO-261-4, TO-261AA
Packaging: Cut Tape (CT)
Description: TRANS PNP 60V 8A SOT223-4
Power - Max: 1.5 W
Voltage - Collector Emitter Breakdown (Max): 60 V
Current - Collector (Ic) (Max): 8 A
Part Status: Obsolete
Supplier Device Package: SOT-223-4
Frequency - Transition: 40MHz
DC Current Gain (hFE) (Min) @ Ic, Vce: 40 @ 4A, 1V
Current - Collector Cutoff (Max): 10µA (ICBO)
Vce Saturation (Max) @ Ib, Ic: 1V @ 400mA, 8A
Operating Temperature: -55°C ~ 150°C (TJ)
Transistor Type: PNP
Mounting Type: Surface Mount
Package / Case: TO-261-4, TO-261AA
Packaging: Cut Tape (CT)
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| NZT605 |
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Виробник: onsemi
Description: TRANS NPN DARL 110V 1.5A SOT-223
Power - Max: 1 W
Voltage - Collector Emitter Breakdown (Max): 110 V
Current - Collector (Ic) (Max): 1.5 A
Supplier Device Package: SOT-223-4
Frequency - Transition: 150MHz
DC Current Gain (hFE) (Min) @ Ic, Vce: 2000 @ 1A, 5V
Current - Collector Cutoff (Max): 10nA (ICBO)
Vce Saturation (Max) @ Ib, Ic: 1.5V @ 1mA, 1A
Operating Temperature: -55°C ~ 150°C (TJ)
Transistor Type: NPN - Darlington
Mounting Type: Surface Mount
Package / Case: TO-261-4, TO-261AA
Packaging: Cut Tape (CT)
Description: TRANS NPN DARL 110V 1.5A SOT-223
Power - Max: 1 W
Voltage - Collector Emitter Breakdown (Max): 110 V
Current - Collector (Ic) (Max): 1.5 A
Supplier Device Package: SOT-223-4
Frequency - Transition: 150MHz
DC Current Gain (hFE) (Min) @ Ic, Vce: 2000 @ 1A, 5V
Current - Collector Cutoff (Max): 10nA (ICBO)
Vce Saturation (Max) @ Ib, Ic: 1.5V @ 1mA, 1A
Operating Temperature: -55°C ~ 150°C (TJ)
Transistor Type: NPN - Darlington
Mounting Type: Surface Mount
Package / Case: TO-261-4, TO-261AA
Packaging: Cut Tape (CT)
на замовлення 14397 шт:
термін постачання 21-31 дні (днів)
| Кількість | Ціна без ПДВ |
|---|---|
| 6+ | 55.79 грн |
| 10+ | 33.36 грн |
| 100+ | 21.54 грн |
| 500+ | 15.47 грн |
| 1000+ | 13.94 грн |
| 2000+ | 12.65 грн |
| 6N136SDM |
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Виробник: onsemi
Description: OPTOISO 5KV TRANS W/BASE 8-SMD
Packaging: Cut Tape (CT)
Package / Case: 8-SMD, Gull Wing
Output Type: Transistor with Base
Mounting Type: Surface Mount
Operating Temperature: -40°C ~ 100°C
Voltage - Forward (Vf) (Typ): 1.45V
Input Type: DC
Current - Output / Channel: 8mA
Voltage - Isolation: 5000Vrms
Current Transfer Ratio (Min): 19% @ 16mA
Current Transfer Ratio (Max): 50% @ 16mA
Supplier Device Package: 8-SMD
Voltage - Output (Max): 20V
Turn On / Turn Off Time (Typ): 250ns, 260ns
Part Status: Active
Number of Channels: 1
Current - DC Forward (If) (Max): 25 mA
Description: OPTOISO 5KV TRANS W/BASE 8-SMD
Packaging: Cut Tape (CT)
Package / Case: 8-SMD, Gull Wing
Output Type: Transistor with Base
Mounting Type: Surface Mount
Operating Temperature: -40°C ~ 100°C
Voltage - Forward (Vf) (Typ): 1.45V
Input Type: DC
Current - Output / Channel: 8mA
Voltage - Isolation: 5000Vrms
Current Transfer Ratio (Min): 19% @ 16mA
Current Transfer Ratio (Max): 50% @ 16mA
Supplier Device Package: 8-SMD
Voltage - Output (Max): 20V
Turn On / Turn Off Time (Typ): 250ns, 260ns
Part Status: Active
Number of Channels: 1
Current - DC Forward (If) (Max): 25 mA
на замовлення 5199 шт:
термін постачання 21-31 дні (днів)
| Кількість | Ціна без ПДВ |
|---|---|
| 3+ | 118.56 грн |
| 10+ | 80.74 грн |
| 100+ | 61.10 грн |
| 500+ | 49.17 грн |
| FAN3214TMX |
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Виробник: onsemi
Description: IC GATE DRVR LOW-SIDE 8SOIC
DigiKey Programmable: Not Verified
Part Status: Active
Current - Peak Output (Source, Sink): 5A, 5A
Logic Voltage - VIL, VIH: 0.8V, 2V
Gate Type: N-Channel MOSFET
Number of Drivers: 2
Driven Configuration: Low-Side
Channel Type: Synchronous
Rise / Fall Time (Typ): 12ns, 9ns
Supplier Device Package: 8-SOIC
Input Type: Non-Inverting
Voltage - Supply: 4.5V ~ 18V
Operating Temperature: -40°C ~ 125°C (TA)
Mounting Type: Surface Mount
Package / Case: 8-SOIC (0.154", 3.90mm Width)
Packaging: Cut Tape (CT)
Description: IC GATE DRVR LOW-SIDE 8SOIC
DigiKey Programmable: Not Verified
Part Status: Active
Current - Peak Output (Source, Sink): 5A, 5A
Logic Voltage - VIL, VIH: 0.8V, 2V
Gate Type: N-Channel MOSFET
Number of Drivers: 2
Driven Configuration: Low-Side
Channel Type: Synchronous
Rise / Fall Time (Typ): 12ns, 9ns
Supplier Device Package: 8-SOIC
Input Type: Non-Inverting
Voltage - Supply: 4.5V ~ 18V
Operating Temperature: -40°C ~ 125°C (TA)
Mounting Type: Surface Mount
Package / Case: 8-SOIC (0.154", 3.90mm Width)
Packaging: Cut Tape (CT)
на замовлення 300669 шт:
термін постачання 21-31 дні (днів)
| Кількість | Ціна без ПДВ |
|---|---|
| 2+ | 176.68 грн |
| 10+ | 106.86 грн |
| 25+ | 90.29 грн |
| 100+ | 67.09 грн |
| 250+ | 58.42 грн |
| 500+ | 53.09 грн |
| 1000+ | 47.83 грн |
| FAN3216TMX |
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Виробник: onsemi
Description: IC GATE DRVR LOW-SIDE 8SOIC
DigiKey Programmable: Not Verified
Part Status: Active
Current - Peak Output (Source, Sink): 3A, 3A
Logic Voltage - VIL, VIH: 0.8V, 2V
Gate Type: N-Channel MOSFET
Number of Drivers: 2
Driven Configuration: Low-Side
Channel Type: Synchronous
Rise / Fall Time (Typ): 12ns, 9ns
Supplier Device Package: 8-SOIC
Input Type: Inverting
Voltage - Supply: 4.5V ~ 18V
Operating Temperature: -40°C ~ 125°C (TA)
Mounting Type: Surface Mount
Package / Case: 8-SOIC (0.154", 3.90mm Width)
Packaging: Cut Tape (CT)
Description: IC GATE DRVR LOW-SIDE 8SOIC
DigiKey Programmable: Not Verified
Part Status: Active
Current - Peak Output (Source, Sink): 3A, 3A
Logic Voltage - VIL, VIH: 0.8V, 2V
Gate Type: N-Channel MOSFET
Number of Drivers: 2
Driven Configuration: Low-Side
Channel Type: Synchronous
Rise / Fall Time (Typ): 12ns, 9ns
Supplier Device Package: 8-SOIC
Input Type: Inverting
Voltage - Supply: 4.5V ~ 18V
Operating Temperature: -40°C ~ 125°C (TA)
Mounting Type: Surface Mount
Package / Case: 8-SOIC (0.154", 3.90mm Width)
Packaging: Cut Tape (CT)
на замовлення 324969 шт:
термін постачання 21-31 дні (днів)
| Кількість | Ціна без ПДВ |
|---|---|
| 2+ | 173.58 грн |
| 10+ | 104.39 грн |
| 25+ | 88.11 грн |
| 100+ | 65.43 грн |
| 250+ | 56.94 грн |
| 500+ | 51.72 грн |
| 1000+ | 46.57 грн |
| FAN4852IMU8X |
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Виробник: onsemi
Description: IC CMOS 2 CIRCUIT 8MSOP
Number of Circuits: 2
Supplier Device Package: 8-MSOP
Voltage - Input Offset: 300 µV
Current - Input Bias: 0.1 pA
Gain Bandwidth Product: 9 MHz
Slew Rate: 6.1V/µs
Current - Supply: 900µA
Operating Temperature: -40°C ~ 85°C
Amplifier Type: CMOS
Mounting Type: Surface Mount
Output Type: Rail-to-Rail
Package / Case: 8-TSSOP, 8-MSOP (0.118", 3.00mm Width)
Packaging: Cut Tape (CT)
Voltage - Supply Span (Max): 5 V
Voltage - Supply Span (Min): 2.5 V
Current - Output / Channel: 90 mA
Description: IC CMOS 2 CIRCUIT 8MSOP
Number of Circuits: 2
Supplier Device Package: 8-MSOP
Voltage - Input Offset: 300 µV
Current - Input Bias: 0.1 pA
Gain Bandwidth Product: 9 MHz
Slew Rate: 6.1V/µs
Current - Supply: 900µA
Operating Temperature: -40°C ~ 85°C
Amplifier Type: CMOS
Mounting Type: Surface Mount
Output Type: Rail-to-Rail
Package / Case: 8-TSSOP, 8-MSOP (0.118", 3.00mm Width)
Packaging: Cut Tape (CT)
Voltage - Supply Span (Max): 5 V
Voltage - Supply Span (Min): 2.5 V
Current - Output / Channel: 90 mA
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| FAN6921MLMY |
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Виробник: onsemi
Description: IC PFC CTRLR CRM 16SOP
Mounting Type: Surface Mount
Package / Case: 16-SOIC (0.154", 3.90mm Width)
Packaging: Cut Tape (CT)
Current - Startup: 10 µA
Part Status: Last Time Buy
Supplier Device Package: 16-SOIC
Mode: Critical Conduction (CRM)
Voltage - Supply: 8.5V ~ 25V
Operating Temperature: -40°C ~ 105°C
Description: IC PFC CTRLR CRM 16SOP
Mounting Type: Surface Mount
Package / Case: 16-SOIC (0.154", 3.90mm Width)
Packaging: Cut Tape (CT)
Current - Startup: 10 µA
Part Status: Last Time Buy
Supplier Device Package: 16-SOIC
Mode: Critical Conduction (CRM)
Voltage - Supply: 8.5V ~ 25V
Operating Temperature: -40°C ~ 105°C
на замовлення 5000 шт:
термін постачання 21-31 дні (днів)
| Кількість | Ціна без ПДВ |
|---|---|
| 2+ | 203.80 грн |
| 10+ | 124.02 грн |
| 25+ | 105.10 грн |
| 100+ | 78.57 грн |
| 250+ | 68.70 грн |
| 500+ | 62.63 грн |
| 1000+ | 56.60 грн |
| FAN7085MX-GF085 |
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Виробник: onsemi
Description: IC GATE DRVR HIGH-SIDE 8SOIC
Qualification: AEC-Q100
Grade: Automotive
DigiKey Programmable: Not Verified
Part Status: Active
Current - Peak Output (Source, Sink): 450mA, 450mA
Gate Type: IGBT, MOSFET (N-Channel)
Number of Drivers: 1
Driven Configuration: High-Side
Channel Type: Single
Rise / Fall Time (Typ): 65ns, 25ns
Supplier Device Package: 8-SOIC
High Side Voltage - Max (Bootstrap): 300 V
Input Type: Inverting
Voltage - Supply: 4.5V ~ 20V
Operating Temperature: -40°C ~ 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: 8-SOIC (0.154", 3.90mm Width)
Packaging: Cut Tape (CT)
Description: IC GATE DRVR HIGH-SIDE 8SOIC
Qualification: AEC-Q100
Grade: Automotive
DigiKey Programmable: Not Verified
Part Status: Active
Current - Peak Output (Source, Sink): 450mA, 450mA
Gate Type: IGBT, MOSFET (N-Channel)
Number of Drivers: 1
Driven Configuration: High-Side
Channel Type: Single
Rise / Fall Time (Typ): 65ns, 25ns
Supplier Device Package: 8-SOIC
High Side Voltage - Max (Bootstrap): 300 V
Input Type: Inverting
Voltage - Supply: 4.5V ~ 20V
Operating Temperature: -40°C ~ 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: 8-SOIC (0.154", 3.90mm Width)
Packaging: Cut Tape (CT)
на замовлення 3533 шт:
термін постачання 21-31 дні (днів)
| Кількість | Ціна без ПДВ |
|---|---|
| 2+ | 242.55 грн |
| 10+ | 149.54 грн |
| 25+ | 127.51 грн |
| 100+ | 96.33 грн |
| 250+ | 84.87 грн |
| 500+ | 77.82 грн |
| 1000+ | 70.74 грн |
| FAN73901MX |
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Виробник: onsemi
Description: IC GATE DRVR HALF-BRIDGE 8SOIC
Packaging: Cut Tape (CT)
Package / Case: 8-SOIC (0.154", 3.90mm Width)
Mounting Type: Surface Mount
Operating Temperature: -40°C ~ 150°C (TJ)
Voltage - Supply: 10V ~ 20V
Input Type: Non-Inverting
High Side Voltage - Max (Bootstrap): 600 V
Supplier Device Package: 8-SOIC
Rise / Fall Time (Typ): 25ns, 20ns
Channel Type: Independent
Driven Configuration: Half-Bridge
Number of Drivers: 2
Gate Type: IGBT, MOSFET (N-Channel)
Logic Voltage - VIL, VIH: 1.2V, 2.5V
Current - Peak Output (Source, Sink): 2.5A, 2.5A
Part Status: Last Time Buy
DigiKey Programmable: Not Verified
Description: IC GATE DRVR HALF-BRIDGE 8SOIC
Packaging: Cut Tape (CT)
Package / Case: 8-SOIC (0.154", 3.90mm Width)
Mounting Type: Surface Mount
Operating Temperature: -40°C ~ 150°C (TJ)
Voltage - Supply: 10V ~ 20V
Input Type: Non-Inverting
High Side Voltage - Max (Bootstrap): 600 V
Supplier Device Package: 8-SOIC
Rise / Fall Time (Typ): 25ns, 20ns
Channel Type: Independent
Driven Configuration: Half-Bridge
Number of Drivers: 2
Gate Type: IGBT, MOSFET (N-Channel)
Logic Voltage - VIL, VIH: 1.2V, 2.5V
Current - Peak Output (Source, Sink): 2.5A, 2.5A
Part Status: Last Time Buy
DigiKey Programmable: Not Verified
на замовлення 8835 шт:
термін постачання 21-31 дні (днів)
| Кількість | Ціна без ПДВ |
|---|---|
| 3+ | 147.23 грн |
| 10+ | 105.14 грн |
| 25+ | 95.90 грн |
| 100+ | 80.50 грн |
| 250+ | 75.97 грн |
| 500+ | 73.24 грн |
| 1000+ | 69.83 грн |
| FAN73932MX |
![]() |
Виробник: onsemi
Description: IC GATE DRVR HALF-BRIDGE 8SOP
Package / Case: 8-SOIC (0.154", 3.90mm Width)
Packaging: Cut Tape (CT)
DigiKey Programmable: Not Verified
Part Status: Last Time Buy
Current - Peak Output (Source, Sink): 2.5A, 2.5A
Logic Voltage - VIL, VIH: 0.8V, 2.5V
Gate Type: IGBT, N-Channel MOSFET
Number of Drivers: 2
Driven Configuration: Half-Bridge
Channel Type: Synchronous
Rise / Fall Time (Typ): 25ns, 20ns
Supplier Device Package: 8-SOIC
High Side Voltage - Max (Bootstrap): 600 V
Input Type: Non-Inverting
Voltage - Supply: 10V ~ 20V
Operating Temperature: -40°C ~ 150°C (TJ)
Mounting Type: Surface Mount
Description: IC GATE DRVR HALF-BRIDGE 8SOP
Package / Case: 8-SOIC (0.154", 3.90mm Width)
Packaging: Cut Tape (CT)
DigiKey Programmable: Not Verified
Part Status: Last Time Buy
Current - Peak Output (Source, Sink): 2.5A, 2.5A
Logic Voltage - VIL, VIH: 0.8V, 2.5V
Gate Type: IGBT, N-Channel MOSFET
Number of Drivers: 2
Driven Configuration: Half-Bridge
Channel Type: Synchronous
Rise / Fall Time (Typ): 25ns, 20ns
Supplier Device Package: 8-SOIC
High Side Voltage - Max (Bootstrap): 600 V
Input Type: Non-Inverting
Voltage - Supply: 10V ~ 20V
Operating Temperature: -40°C ~ 150°C (TJ)
Mounting Type: Surface Mount
на замовлення 203 шт:
термін постачання 21-31 дні (днів)
| Кількість | Ціна без ПДВ |
|---|---|
| 2+ | 172.03 грн |
| FAN73933MX |
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Виробник: onsemi
Description: IC GATE DRVR HALF-BRIDGE 14SOP
Part Status: Last Time Buy
Current - Peak Output (Source, Sink): 2.5A, 2.5A
Logic Voltage - VIL, VIH: 0.8V, 2.5V
Gate Type: IGBT, MOSFET (N-Channel)
Number of Drivers: 2
Driven Configuration: Half-Bridge
Channel Type: Independent
Rise / Fall Time (Typ): 40ns, 20ns
Supplier Device Package: 14-SOP
High Side Voltage - Max (Bootstrap): 600 V
Input Type: Non-Inverting
Voltage - Supply: 10V ~ 20V
Operating Temperature: -40°C ~ 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: 14-SOIC (0.154", 3.90mm Width)
Packaging: Cut Tape (CT)
DigiKey Programmable: Not Verified
Description: IC GATE DRVR HALF-BRIDGE 14SOP
Part Status: Last Time Buy
Current - Peak Output (Source, Sink): 2.5A, 2.5A
Logic Voltage - VIL, VIH: 0.8V, 2.5V
Gate Type: IGBT, MOSFET (N-Channel)
Number of Drivers: 2
Driven Configuration: Half-Bridge
Channel Type: Independent
Rise / Fall Time (Typ): 40ns, 20ns
Supplier Device Package: 14-SOP
High Side Voltage - Max (Bootstrap): 600 V
Input Type: Non-Inverting
Voltage - Supply: 10V ~ 20V
Operating Temperature: -40°C ~ 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: 14-SOIC (0.154", 3.90mm Width)
Packaging: Cut Tape (CT)
DigiKey Programmable: Not Verified
на замовлення 10654 шт:
термін постачання 21-31 дні (днів)
| Кількість | Ціна без ПДВ |
|---|---|
| 2+ | 226.27 грн |
| 10+ | 139.39 грн |
| 25+ | 118.80 грн |
| 100+ | 89.57 грн |
| 250+ | 78.82 грн |
| 500+ | 72.20 грн |
| 1000+ | 65.57 грн |
| FDD3N50NZTM |
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Виробник: onsemi
Description: MOSFET N-CH 500V 2.5A DPAK
Input Capacitance (Ciss) (Max) @ Vds: 280 pF @ 25 V
Gate Charge (Qg) (Max) @ Vgs: 8 nC @ 10 V
Drain to Source Voltage (Vdss): 500 V
Vgs (Max): ±25V
Drive Voltage (Max Rds On, Min Rds On): 10V
Supplier Device Package: TO-252AA
Vgs(th) (Max) @ Id: 5V @ 250µA
Power Dissipation (Max): 40W (Tc)
Rds On (Max) @ Id, Vgs: 2.5Ohm @ 1.25A, 10V
Current - Continuous Drain (Id) @ 25°C: 2.5A (Tc)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Packaging: Cut Tape (CT)
Description: MOSFET N-CH 500V 2.5A DPAK
Input Capacitance (Ciss) (Max) @ Vds: 280 pF @ 25 V
Gate Charge (Qg) (Max) @ Vgs: 8 nC @ 10 V
Drain to Source Voltage (Vdss): 500 V
Vgs (Max): ±25V
Drive Voltage (Max Rds On, Min Rds On): 10V
Supplier Device Package: TO-252AA
Vgs(th) (Max) @ Id: 5V @ 250µA
Power Dissipation (Max): 40W (Tc)
Rds On (Max) @ Id, Vgs: 2.5Ohm @ 1.25A, 10V
Current - Continuous Drain (Id) @ 25°C: 2.5A (Tc)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Packaging: Cut Tape (CT)
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| FDMS7608S |
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Виробник: onsemi
Description: MOSFET 2N-CH 30V 12A/15A POWER56
Drain to Source Voltage (Vdss): 30V
Power - Max: 1W
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 150°C (TJ)
Configuration: 2 N-Channel (Dual)
Mounting Type: Surface Mount
Package / Case: 8-PowerWDFN
Packaging: Cut Tape (CT)
Supplier Device Package: Power56
Vgs(th) (Max) @ Id: 3V @ 250µA
FET Feature: Logic Level Gate
Gate Charge (Qg) (Max) @ Vgs: 24nC @ 10V
Rds On (Max) @ Id, Vgs: 10mOhm @ 12A, 10V
Input Capacitance (Ciss) (Max) @ Vds: 1510pF @ 15V
Current - Continuous Drain (Id) @ 25°C: 12A, 15A
Description: MOSFET 2N-CH 30V 12A/15A POWER56
Drain to Source Voltage (Vdss): 30V
Power - Max: 1W
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 150°C (TJ)
Configuration: 2 N-Channel (Dual)
Mounting Type: Surface Mount
Package / Case: 8-PowerWDFN
Packaging: Cut Tape (CT)
Supplier Device Package: Power56
Vgs(th) (Max) @ Id: 3V @ 250µA
FET Feature: Logic Level Gate
Gate Charge (Qg) (Max) @ Vgs: 24nC @ 10V
Rds On (Max) @ Id, Vgs: 10mOhm @ 12A, 10V
Input Capacitance (Ciss) (Max) @ Vds: 1510pF @ 15V
Current - Continuous Drain (Id) @ 25°C: 12A, 15A
на замовлення 26301 шт:
термін постачання 21-31 дні (днів)
| Кількість | Ціна без ПДВ |
|---|---|
| 4+ | 85.24 грн |
| 10+ | 66.93 грн |
| 100+ | 52.07 грн |
| 500+ | 41.42 грн |
| 1000+ | 33.74 грн |
| FQD2P40TM |
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Виробник: onsemi
Description: MOSFET P-CH 400V 1.56A DPAK
Packaging: Cut Tape (CT)
Gate Charge (Qg) (Max) @ Vgs: 13 nC @ 10 V
Drain to Source Voltage (Vdss): 400 V
Vgs (Max): ±30V
Drive Voltage (Max Rds On, Min Rds On): 10V
Supplier Device Package: TO-252AA
Vgs(th) (Max) @ Id: 5V @ 250µA
Power Dissipation (Max): 2.5W (Ta), 38W (Tc)
Rds On (Max) @ Id, Vgs: 6.5Ohm @ 780mA, 10V
Current - Continuous Drain (Id) @ 25°C: 1.56A (Tc)
FET Type: P-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Input Capacitance (Ciss) (Max) @ Vds: 350 pF @ 25 V
Description: MOSFET P-CH 400V 1.56A DPAK
Packaging: Cut Tape (CT)
Gate Charge (Qg) (Max) @ Vgs: 13 nC @ 10 V
Drain to Source Voltage (Vdss): 400 V
Vgs (Max): ±30V
Drive Voltage (Max Rds On, Min Rds On): 10V
Supplier Device Package: TO-252AA
Vgs(th) (Max) @ Id: 5V @ 250µA
Power Dissipation (Max): 2.5W (Ta), 38W (Tc)
Rds On (Max) @ Id, Vgs: 6.5Ohm @ 780mA, 10V
Current - Continuous Drain (Id) @ 25°C: 1.56A (Tc)
FET Type: P-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Input Capacitance (Ciss) (Max) @ Vds: 350 pF @ 25 V
на замовлення 4902 шт:
термін постачання 21-31 дні (днів)
| Кількість | Ціна без ПДВ |
|---|---|
| 3+ | 109.26 грн |
| 10+ | 66.41 грн |
| 100+ | 44.16 грн |
| 500+ | 32.50 грн |
| 1000+ | 29.62 грн |
| KSC5402DTF |
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Виробник: onsemi
Description: TRANS NPN 525V 2A TO252AA
Power - Max: 30 W
Voltage - Collector Emitter Breakdown (Max): 525 V
Current - Collector (Ic) (Max): 2 A
Supplier Device Package: TO-252AA
Frequency - Transition: 11MHz
DC Current Gain (hFE) (Min) @ Ic, Vce: 6 @ 1A, 1V
Current - Collector Cutoff (Max): 250µA
Vce Saturation (Max) @ Ib, Ic: 750mV @ 200mA, 1A
Operating Temperature: 150°C (TJ)
Transistor Type: NPN
Mounting Type: Surface Mount
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Packaging: Cut Tape (CT)
Description: TRANS NPN 525V 2A TO252AA
Power - Max: 30 W
Voltage - Collector Emitter Breakdown (Max): 525 V
Current - Collector (Ic) (Max): 2 A
Supplier Device Package: TO-252AA
Frequency - Transition: 11MHz
DC Current Gain (hFE) (Min) @ Ic, Vce: 6 @ 1A, 1V
Current - Collector Cutoff (Max): 250µA
Vce Saturation (Max) @ Ib, Ic: 750mV @ 200mA, 1A
Operating Temperature: 150°C (TJ)
Transistor Type: NPN
Mounting Type: Surface Mount
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Packaging: Cut Tape (CT)
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| FAN5624UMPX |
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Виробник: onsemi
Description: IC LED DRV LIN SGL WR 10UMLP
Type: Linear
Number of Outputs: 4
Mounting Type: Surface Mount
Package / Case: 10-UFQFN
Packaging: Cut Tape (CT)
Voltage - Supply (Max): 5.5V
Voltage - Supply (Min): 2.7V
Dimming: Single-Wire
Supplier Device Package: 10-UMLP (1.8x1.4)
Internal Switch(s): Yes
Current - Output / Channel: 30mA
Applications: Backlight
Operating Temperature: -40°C ~ 85°C (TA)
Description: IC LED DRV LIN SGL WR 10UMLP
Type: Linear
Number of Outputs: 4
Mounting Type: Surface Mount
Package / Case: 10-UFQFN
Packaging: Cut Tape (CT)
Voltage - Supply (Max): 5.5V
Voltage - Supply (Min): 2.7V
Dimming: Single-Wire
Supplier Device Package: 10-UMLP (1.8x1.4)
Internal Switch(s): Yes
Current - Output / Channel: 30mA
Applications: Backlight
Operating Temperature: -40°C ~ 85°C (TA)
на замовлення 4177 шт:
термін постачання 21-31 дні (днів)
| Кількість | Ціна без ПДВ |
|---|---|
| 3+ | 114.69 грн |
| 10+ | 67.61 грн |
| 25+ | 56.53 грн |
| 100+ | 41.33 грн |
| 250+ | 35.56 грн |
| 500+ | 32.00 грн |
| 1000+ | 28.55 грн |
| 2500+ | 25.40 грн |
| FDC5661N-F085 |
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Виробник: onsemi
Description: MOSFET N-CH 60V 4.3A SUPERSOT6
Vgs(th) (Max) @ Id: 3V @ 250µA
Power Dissipation (Max): 1.6W (Ta)
Rds On (Max) @ Id, Vgs: 47mOhm @ 4.3A, 10V
Current - Continuous Drain (Id) @ 25°C: 4.3A (Ta)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: SOT-23-6 Thin, TSOT-23-6
Packaging: Cut Tape (CT)
Qualification: AEC-Q101
Input Capacitance (Ciss) (Max) @ Vds: 763 pF @ 25 V
Gate Charge (Qg) (Max) @ Vgs: 19 nC @ 10 V
Drain to Source Voltage (Vdss): 60 V
Vgs (Max): ±20V
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Grade: Automotive
Supplier Device Package: SuperSOT™-6
Description: MOSFET N-CH 60V 4.3A SUPERSOT6
Vgs(th) (Max) @ Id: 3V @ 250µA
Power Dissipation (Max): 1.6W (Ta)
Rds On (Max) @ Id, Vgs: 47mOhm @ 4.3A, 10V
Current - Continuous Drain (Id) @ 25°C: 4.3A (Ta)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: SOT-23-6 Thin, TSOT-23-6
Packaging: Cut Tape (CT)
Qualification: AEC-Q101
Input Capacitance (Ciss) (Max) @ Vds: 763 pF @ 25 V
Gate Charge (Qg) (Max) @ Vgs: 19 nC @ 10 V
Drain to Source Voltage (Vdss): 60 V
Vgs (Max): ±20V
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Grade: Automotive
Supplier Device Package: SuperSOT™-6
на замовлення 15336 шт:
термін постачання 21-31 дні (днів)
| Кількість | Ціна без ПДВ |
|---|---|
| 5+ | 61.99 грн |
| 10+ | 37.16 грн |
| 100+ | 24.19 грн |
| 500+ | 17.44 грн |
| 1000+ | 15.75 грн |
| FDN8601 |
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Виробник: onsemi
Description: MOSFET N-CH 100V 2.7A SUPERSOT3
Input Capacitance (Ciss) (Max) @ Vds: 210 pF @ 50 V
Gate Charge (Qg) (Max) @ Vgs: 5 nC @ 10 V
Drain to Source Voltage (Vdss): 100 V
Vgs (Max): ±20V
Drive Voltage (Max Rds On, Min Rds On): 6V, 10V
Part Status: Active
Supplier Device Package: SOT-23-3
Vgs(th) (Max) @ Id: 4V @ 250µA
Power Dissipation (Max): 1.5W (Ta)
Rds On (Max) @ Id, Vgs: 109mOhm @ 1.5A, 10V
Current - Continuous Drain (Id) @ 25°C: 2.7A (Ta)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: TO-236-3, SC-59, SOT-23-3
Packaging: Cut Tape (CT)
Description: MOSFET N-CH 100V 2.7A SUPERSOT3
Input Capacitance (Ciss) (Max) @ Vds: 210 pF @ 50 V
Gate Charge (Qg) (Max) @ Vgs: 5 nC @ 10 V
Drain to Source Voltage (Vdss): 100 V
Vgs (Max): ±20V
Drive Voltage (Max Rds On, Min Rds On): 6V, 10V
Part Status: Active
Supplier Device Package: SOT-23-3
Vgs(th) (Max) @ Id: 4V @ 250µA
Power Dissipation (Max): 1.5W (Ta)
Rds On (Max) @ Id, Vgs: 109mOhm @ 1.5A, 10V
Current - Continuous Drain (Id) @ 25°C: 2.7A (Ta)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: TO-236-3, SC-59, SOT-23-3
Packaging: Cut Tape (CT)
на замовлення 21597 шт:
термін постачання 21-31 дні (днів)
| Кількість | Ціна без ПДВ |
|---|---|
| 7+ | 48.82 грн |
| 10+ | 46.94 грн |
| 100+ | 39.03 грн |
| 500+ | 30.23 грн |
| 1000+ | 27.74 грн |
| FDY302NZ |
![]() |
Виробник: onsemi
Description: MOSFET N-CH 20V 600MA SC89-3
Rds On (Max) @ Id, Vgs: 300mOhm @ 600mA, 4.5V
Current - Continuous Drain (Id) @ 25°C: 600mA (Ta)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: SC-89, SOT-490
Packaging: Cut Tape (CT)
Input Capacitance (Ciss) (Max) @ Vds: 60 pF @ 10 V
Gate Charge (Qg) (Max) @ Vgs: 1.1 nC @ 4.5 V
Drain to Source Voltage (Vdss): 20 V
Vgs (Max): ±12V
Drive Voltage (Max Rds On, Min Rds On): 1.8V, 4.5V
Part Status: Active
Supplier Device Package: SC-89-3
Vgs(th) (Max) @ Id: 1.5V @ 250µA
Power Dissipation (Max): 625mW (Ta)
Description: MOSFET N-CH 20V 600MA SC89-3
Rds On (Max) @ Id, Vgs: 300mOhm @ 600mA, 4.5V
Current - Continuous Drain (Id) @ 25°C: 600mA (Ta)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: SC-89, SOT-490
Packaging: Cut Tape (CT)
Input Capacitance (Ciss) (Max) @ Vds: 60 pF @ 10 V
Gate Charge (Qg) (Max) @ Vgs: 1.1 nC @ 4.5 V
Drain to Source Voltage (Vdss): 20 V
Vgs (Max): ±12V
Drive Voltage (Max Rds On, Min Rds On): 1.8V, 4.5V
Part Status: Active
Supplier Device Package: SC-89-3
Vgs(th) (Max) @ Id: 1.5V @ 250µA
Power Dissipation (Max): 625mW (Ta)
на замовлення 6386 шт:
термін постачання 21-31 дні (днів)
| Кількість | Ціна без ПДВ |
|---|---|
| 13+ | 24.80 грн |
| 16+ | 18.80 грн |
| 100+ | 11.28 грн |
| 500+ | 9.80 грн |
| 1000+ | 6.66 грн |
| FPF1038UCX |
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Виробник: onsemi
Description: IC PWR SWITCH P-CHAN 1:1 6WLCSP
Description: IC PWR SWITCH P-CHAN 1:1 6WLCSP
на замовлення 25550 шт:
термін постачання 21-31 дні (днів)
| Кількість | Ціна без ПДВ |
|---|---|
| 5+ | 68.19 грн |
| 10+ | 57.76 грн |
| 25+ | 54.23 грн |
| 100+ | 41.53 грн |
| 250+ | 38.57 грн |
| 500+ | 32.83 грн |
| 1000+ | 25.83 грн |




































