| Фото | Назва | Виробник | Інформація |
Доступність |
Ціна |
||||||||||||||||
|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|
 |
FDMA8878 | onsemi |
 Description: MOSFET N-CH 30V 9A/10A 6MICROFETPackaging: Cut Tape (CT) Package / Case: 6-WDFN Exposed Pad Mounting Type: Surface Mount Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 9A (Ta), 10A (Tc) Rds On (Max) @ Id, Vgs: 16mOhm @ 9A, 10V Power Dissipation (Max): 2.4W (Ta) Vgs(th) (Max) @ Id: 3V @ 250µA Supplier Device Package: 6-MicroFET (2x2) Part Status: Active Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 30 V Gate Charge (Qg) (Max) @ Vgs: 12 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 720 pF @ 15 V |
на замовлення 13092 шт: термін постачання 21-31 дні (днів) |
|
||||||||||||||||
 |
NC7WZ07FHX | onsemi |
Description: IC BUF NON-INVERT 5.5V 6MICROPK2 Packaging: Cut Tape (CT) Package / Case: 6-UFDFN Output Type: Open Drain Mounting Type: Surface Mount Number of Elements: 2 Logic Type: Buffer, Non-Inverting Operating Temperature: -40°C ~ 85°C (TA) Voltage - Supply: 1.65V ~ 5.5V Number of Bits per Element: 1 Current - Output High, Low: -, 32mA Supplier Device Package: 6-MicroPak2™ |
на замовлення 6300 шт: термін постачання 21-31 дні (днів) |
|
||||||||||||||||
 |
FDMS7678 | onsemi |
Description: MOSFET N-CH 30V 17.5A/26A 8PQFN Packaging: Cut Tape (CT) Package / Case: 8-PowerTDFN Mounting Type: Surface Mount Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 17.5A (Ta), 26A (Tc) Rds On (Max) @ Id, Vgs: 5.5mOhm @ 17.5A, 10V Power Dissipation (Max): 2.3W (Ta), 41W (Tc) Vgs(th) (Max) @ Id: 3V @ 250µA Supplier Device Package: 8-PQFN (5x6) Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 30 V Gate Charge (Qg) (Max) @ Vgs: 39 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 2410 pF @ 15 V |
на замовлення 3000 шт: термін постачання 21-31 дні (днів) |
|
||||||||||||||||
 |
FDMC86116LZ | onsemi |
Description: MOSFET N-CH 100V 3.3A/7.5A 8MLP Packaging: Cut Tape (CT) Package / Case: 8-PowerWDFN Mounting Type: Surface Mount Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 3.3A (Ta), 7.5A (Tc) Rds On (Max) @ Id, Vgs: 103mOhm @ 3.3A, 10V Power Dissipation (Max): 2.3W (Ta), 19W (Tc) Vgs(th) (Max) @ Id: 2.2V @ 250µA Supplier Device Package: 8-MLP (3.3x3.3) Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 100 V Gate Charge (Qg) (Max) @ Vgs: 6 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 310 pF @ 50 V |
на замовлення 17602 шт: термін постачання 21-31 дні (днів) |
|
||||||||||||||||
 |
FPF1320UCX | onsemi |
Description: IC PWR SWITCH P-CHAN 2:1 6WLCSP Features: Slew Rate Controlled Packaging: Cut Tape (CT) Package / Case: 6-UFBGA, WLCSP Output Type: P-Channel Mounting Type: Surface Mount Number of Outputs: 1 Interface: On/Off Switch Type: General Purpose Operating Temperature: -40°C ~ 85°C (TA) Output Configuration: High Side Rds On (Typ): 42mOhm Input Type: Non-Inverting Voltage - Load: 1.5V ~ 5.5V Voltage - Supply (Vcc/Vdd): Not Required Current - Output (Max): 1.5A Ratio - Input:Output: 2:1 Supplier Device Package: 6-WLCSP (0.96x1.66) Fault Protection: Reverse Current Part Status: Active |
на замовлення 13253 шт: термін постачання 21-31 дні (днів) |
|
||||||||||||||||
 |
FDD5N60NZTM | onsemi |
Description: MOSFET N-CH 600V 4A DPAK Packaging: Cut Tape (CT) Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63 Mounting Type: Surface Mount Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 4A (Tc) Rds On (Max) @ Id, Vgs: 2Ohm @ 2A, 10V Power Dissipation (Max): 83W (Tc) Vgs(th) (Max) @ Id: 5V @ 250µA Supplier Device Package: TO-252AA Drive Voltage (Max Rds On, Min Rds On): 10V Vgs (Max): ±25V Drain to Source Voltage (Vdss): 600 V Gate Charge (Qg) (Max) @ Vgs: 13 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 600 pF @ 25 V |
на замовлення 35955 шт: термін постачання 21-31 дні (днів) |
|
||||||||||||||||
|
|
FDD7N25LZTM | onsemi |
Description: MOSFET N-CH 250V 6.2A DPAK Packaging: Cut Tape (CT) Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63 Mounting Type: Surface Mount Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 6.2A (Tc) Rds On (Max) @ Id, Vgs: 550mOhm @ 3.1A, 10V Power Dissipation (Max): 56W (Tc) Vgs(th) (Max) @ Id: 2V @ 250µA Supplier Device Package: TO-252AA Part Status: Active Drive Voltage (Max Rds On, Min Rds On): 5V, 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 250 V Gate Charge (Qg) (Max) @ Vgs: 16 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 635 pF @ 25 V |
на замовлення 8182 шт: термін постачання 21-31 дні (днів) |
|
||||||||||||||||
 |
FDT3N40TF | onsemi |
Description: MOSFET N-CH 400V 2A SOT223-4 Packaging: Cut Tape (CT) Package / Case: TO-261-4, TO-261AA Mounting Type: Surface Mount Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 2A (Tc) Rds On (Max) @ Id, Vgs: 3.4Ohm @ 1A, 10V Power Dissipation (Max): 2W (Tc) Vgs(th) (Max) @ Id: 5V @ 250µA Supplier Device Package: SOT-223-4 Part Status: Obsolete Drive Voltage (Max Rds On, Min Rds On): 10V Vgs (Max): ±30V Drain to Source Voltage (Vdss): 400 V Gate Charge (Qg) (Max) @ Vgs: 6 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 225 pF @ 25 V |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||||||||||
 |
FOD8321R2 | onsemi |
Description: OPTOISO 5KV 1CH GATE DRIVER 5SOP Packaging: Cut Tape (CT) Package / Case: 6-SOIC (0.346", 8.80mm Width), 5 Leads Mounting Type: Surface Mount Operating Temperature: -40°C ~ 100°C Voltage - Forward (Vf) (Typ): 1.5V Current - Peak Output: 3A Technology: Optical Coupling Current - Output High, Low: 2A, 2A Voltage - Isolation: 5000Vrms Approval Agency: UL Supplier Device Package: 5-SOP Rise / Fall Time (Typ): 60ns, 60ns Common Mode Transient Immunity (Min): 20kV/µs Propagation Delay tpLH / tpHL (Max): 500ns, 500ns Pulse Width Distortion (Max): 300ns Part Status: Active Number of Channels: 1 Current - DC Forward (If) (Max): 25 mA Voltage - Output Supply: 16V ~ 30V |
на замовлення 7 шт: термін постачання 21-31 дні (днів) |
|
||||||||||||||||
|
|
FOD8321R2V | onsemi |
Description: OPTOISO 5KV 1CH GATE DRIVER 5SOP |
на замовлення 179 шт: термін постачання 21-31 дні (днів) |
|
||||||||||||||||
|
|
FDMS8622 | onsemi |
Description: MOSFET N-CH 100V 4.8A/16.5A 8QFN Packaging: Cut Tape (CT) Package / Case: 8-PowerTDFN Mounting Type: Surface Mount Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 4.8A (Ta), 16.5A (Tc) Rds On (Max) @ Id, Vgs: 56mOhm @ 4.8A, 10V Power Dissipation (Max): 2.5W (Ta), 31W (Tc) Vgs(th) (Max) @ Id: 4V @ 250µA Supplier Device Package: 8-PQFN (5x6) Part Status: Active Drive Voltage (Max Rds On, Min Rds On): 6V, 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 100 V Gate Charge (Qg) (Max) @ Vgs: 7 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 400 pF @ 50 V |
на замовлення 9793 шт: термін постачання 21-31 дні (днів) |
|
||||||||||||||||
|
|
FDD770N15A | onsemi |
Description: MOSFET N CH 150V 18A DPAK Packaging: Cut Tape (CT) Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63 Mounting Type: Surface Mount Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 18A (Tc) Rds On (Max) @ Id, Vgs: 77mOhm @ 12A, 10V Power Dissipation (Max): 56.8W (Tc) Vgs(th) (Max) @ Id: 4V @ 250µA Supplier Device Package: TO-252AA Part Status: Active Drive Voltage (Max Rds On, Min Rds On): 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 150 V Gate Charge (Qg) (Max) @ Vgs: 11 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 765 pF @ 75 V |
на замовлення 6760 шт: термін постачання 21-31 дні (днів) |
|
||||||||||||||||
 |
FAN3850AUC19X | onsemi |
Description: IC AMP CLASS AB MONO 6WLCSP Features: ADC, Microphone Packaging: Cut Tape (CT) Package / Case: 6-XFBGA, WLCSP Output Type: 1-Channel (Mono) Mounting Type: Surface Mount Type: Class AB Operating Temperature: -30°C ~ 85°C (TA) Voltage - Supply: 1.64V ~ 3.63V Supplier Device Package: 6-WLCSP (1.26x0.86) |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||||||||||
|
|
FDD7N60NZTM | onsemi |
Description: MOSFET N-CH 600V 5.5A DPAK Packaging: Cut Tape (CT) Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63 Mounting Type: Surface Mount Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 5.5A (Tc) Rds On (Max) @ Id, Vgs: 1.25Ohm @ 2.75A, 10V Power Dissipation (Max): 90W (Tc) Vgs(th) (Max) @ Id: 5V @ 250µA Supplier Device Package: TO-252AA Part Status: Obsolete Drive Voltage (Max Rds On, Min Rds On): 10V Vgs (Max): ±25V Drain to Source Voltage (Vdss): 600 V Gate Charge (Qg) (Max) @ Vgs: 17 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 730 pF @ 25 V |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||||||||||
 |
FT7522L6X | onsemi |
Description: IC SUPERVISOR 6MICROPAK Packaging: Cut Tape (CT) Package / Case: 6-UFDFN Mounting Type: Surface Mount Output: Open Drain or Open Collector Type: Reset Timer Reset: Active Low Operating Temperature: -40°C ~ 85°C (TA) Reset Timeout: 320ms Minimum Supplier Device Package: 6-MicroPak DigiKey Programmable: Not Verified |
на замовлення 29229 шт: термін постачання 21-31 дні (днів) |
|
||||||||||||||||
 |
FL7930BMX | onsemi |
Description: IC BALLAST CNTRL 350KHZ 8SOP Packaging: Cut Tape (CT) Package / Case: 8-SOIC (0.154", 3.90mm Width) Mounting Type: Surface Mount Frequency: 250kHz ~ 350kHz Type: Ballast Controller Operating Temperature: -40°C ~ 125°C Voltage - Supply: 13V ~ 20V Supplier Device Package: 8-SOIC Dimming: No Current - Supply: 2.5 mA |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||||||||||
|
|
FL7930CMX | onsemi |
Description: IC BALLAST CNTRL 350KHZ 8SOP Packaging: Cut Tape (CT) Package / Case: 8-SOIC (0.154", 3.90mm Width) Mounting Type: Surface Mount Frequency: 250kHz ~ 350kHz Type: Ballast Controller Operating Temperature: -40°C ~ 125°C Voltage - Supply: 13V ~ 20V Supplier Device Package: 8-SOIC Dimming: No Part Status: Obsolete Current - Supply: 2.5 mA |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||||||||||
 |
FDN86246 | onsemi |
Description: MOSFET N-CH 150V 1.6A SUPERSOT3 Packaging: Cut Tape (CT) Package / Case: TO-236-3, SC-59, SOT-23-3 Mounting Type: Surface Mount Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 1.6A (Ta) Rds On (Max) @ Id, Vgs: 261mOhm @ 1.6A, 10V Power Dissipation (Max): 1.5W (Ta) Vgs(th) (Max) @ Id: 4V @ 250µA Supplier Device Package: SOT-23-3 Part Status: Active Drive Voltage (Max Rds On, Min Rds On): 6V, 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 150 V Gate Charge (Qg) (Max) @ Vgs: 5 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 225 pF @ 75 V |
на замовлення 11729 шт: термін постачання 21-31 дні (днів) |
|
||||||||||||||||
 |
FDT86113LZ | onsemi |
Description: MOSFET N-CH 100V 3.3A SOT223-4 Packaging: Cut Tape (CT) Package / Case: TO-261-4, TO-261AA Mounting Type: Surface Mount Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 3.3A (Tc) Rds On (Max) @ Id, Vgs: 100mOhm @ 3.3A, 10V Power Dissipation (Max): 2.2W (Ta) Vgs(th) (Max) @ Id: 2.5V @ 250µA Supplier Device Package: SOT-223-4 Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 100 V Gate Charge (Qg) (Max) @ Vgs: 6.8 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 315 pF @ 50 V |
на замовлення 2763 шт: термін постачання 21-31 дні (днів) |
|
||||||||||||||||
 |
H11N2SR2M | onsemi |
Description: OPTOISO 4.17KV OPN COLL 6SMD Packaging: Cut Tape (CT) Package / Case: 6-SMD, Gull Wing Output Type: Open Collector Mounting Type: Surface Mount Operating Temperature: -40°C ~ 85°C Voltage - Supply: 4V ~ 15V Voltage - Forward (Vf) (Typ): 1.4V Data Rate: 5MHz Input Type: DC Voltage - Isolation: 4170Vrms Current - DC Forward (If) (Max): 30mA Inputs - Side 1/Side 2: 1/0 Supplier Device Package: 6-SMD Rise / Fall Time (Typ): 7.5ns, 12ns Propagation Delay tpLH / tpHL (Max): 330ns, 330ns Number of Channels: 1 Current - Output / Channel: 50 mA |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||||||||||
|
|
FDMC7678 | onsemi |
Description: MOSFET N-CH 30V 17.5A/19.5A 8MLP Packaging: Cut Tape (CT) Package / Case: 8-PowerWDFN Mounting Type: Surface Mount Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 17.5A (Ta), 19.5A (Tc) Rds On (Max) @ Id, Vgs: 5.3mOhm @ 17.5A, 10V Power Dissipation (Max): 2.3W (Ta), 31W (Tc) Vgs(th) (Max) @ Id: 3V @ 250µA Supplier Device Package: 8-MLP (3.3x3.3) Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 30 V Gate Charge (Qg) (Max) @ Vgs: 39 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 2410 pF @ 15 V |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||||||||||
|
|
FDMC8015L | onsemi |
Description: MOSFET N-CH 40V 7A/18A 8MLP Packaging: Cut Tape (CT) Package / Case: 8-PowerWDFN Mounting Type: Surface Mount Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 7A (Ta), 18A (Tc) Rds On (Max) @ Id, Vgs: 26mOhm @ 7A, 10V Power Dissipation (Max): 2.3W (Ta), 24W (Tc) Vgs(th) (Max) @ Id: 3V @ 250µA Supplier Device Package: 8-MLP (3.3x3.3) Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 40 V Gate Charge (Qg) (Max) @ Vgs: 19 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 945 pF @ 20 V |
на замовлення 3765 шт: термін постачання 21-31 дні (днів) |
|
||||||||||||||||
|
|
FPF1048BUCX | onsemi |
Description: IC PWR SWITCH LOAD MGMT 6WLCSP Features: Slew Rate Controlled Packaging: Cut Tape (CT) Package / Case: 6-UFBGA, WLCSP Mounting Type: Surface Mount Number of Outputs: 1 Interface: On/Off Switch Type: General Purpose Rds On (Typ): 21mOhm Voltage - Load: 1.5V ~ 5.5V Voltage - Supply (Vcc/Vdd): Not Required Current - Output (Max): 3A Supplier Device Package: 6-WLCSP (0.96x1.66) Fault Protection: Reverse Current |
на замовлення 28569 шт: термін постачання 21-31 дні (днів) |
|
||||||||||||||||
 |
FDME1023PZT | onsemi |
Description: MOSFET 2P-CH 20V 2.6A 6MICROFET Packaging: Cut Tape (CT) Package / Case: 6-UFDFN Exposed Pad Mounting Type: Surface Mount Configuration: 2 P-Channel (Dual) Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) Power - Max: 600mW Drain to Source Voltage (Vdss): 20V Current - Continuous Drain (Id) @ 25°C: 2.6A Input Capacitance (Ciss) (Max) @ Vds: 405pF @ 10V Rds On (Max) @ Id, Vgs: 142mOhm @ 2.3A, 4.5V Gate Charge (Qg) (Max) @ Vgs: 7.7nC @ 4.5V FET Feature: Logic Level Gate Vgs(th) (Max) @ Id: 1V @ 250µA Supplier Device Package: 6-MicroFET (1.6x1.6) |
на замовлення 358483 шт: термін постачання 21-31 дні (днів) |
|
||||||||||||||||
 |
FDME1024NZT | onsemi |
Description: MOSFET 2N-CH 20V 3.8A 6MICROFET Packaging: Cut Tape (CT) Package / Case: 6-UFDFN Exposed Pad Mounting Type: Surface Mount Configuration: 2 N-Channel (Dual) Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) Power - Max: 600mW Drain to Source Voltage (Vdss): 20V Current - Continuous Drain (Id) @ 25°C: 3.8A Input Capacitance (Ciss) (Max) @ Vds: 300pF @ 10V Rds On (Max) @ Id, Vgs: 66mOhm @ 3.4A, 4.5V Gate Charge (Qg) (Max) @ Vgs: 4.2nC @ 4.5V FET Feature: Logic Level Gate Vgs(th) (Max) @ Id: 1V @ 250µA Supplier Device Package: 6-MicroFET (1.6x1.6) |
на замовлення 5126 шт: термін постачання 21-31 дні (днів) |
|
||||||||||||||||
 |
FDC86244 | onsemi |
Description: MOSFET N-CH 150V 2.3A SUPERSOT6 Packaging: Cut Tape (CT) Package / Case: SOT-23-6 Thin, TSOT-23-6 Mounting Type: Surface Mount Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 2.3A (Ta) Rds On (Max) @ Id, Vgs: 144mOhm @ 2.3A, 10V Power Dissipation (Max): 1.6W (Ta) Vgs(th) (Max) @ Id: 4V @ 250µA Supplier Device Package: SuperSOT™-6 Part Status: Active Drive Voltage (Max Rds On, Min Rds On): 6V, 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 150 V Gate Charge (Qg) (Max) @ Vgs: 6 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 345 pF @ 75 V |
на замовлення 4848 шт: термін постачання 21-31 дні (днів) |
|
||||||||||||||||
 |
FDZ661PZ | onsemi |
Description: MOSFET P-CH 20V 2.6A 4WLCSP Packaging: Cut Tape (CT) Package / Case: 4-XFBGA, WLCSP Mounting Type: Surface Mount Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: P-Channel Current - Continuous Drain (Id) @ 25°C: 2.6A (Ta) Rds On (Max) @ Id, Vgs: 140mOhm @ 2A, 4.5V Power Dissipation (Max): 1.3W (Ta) Vgs(th) (Max) @ Id: 1.2V @ 250µA Supplier Device Package: 4-WLCSP (0.8x0.8) Drive Voltage (Max Rds On, Min Rds On): 1.5V, 4.5V Vgs (Max): ±8V Drain to Source Voltage (Vdss): 20 V Gate Charge (Qg) (Max) @ Vgs: 8.8 nC @ 4.5 V Input Capacitance (Ciss) (Max) @ Vds: 555 pF @ 10 V |
на замовлення 7250 шт: термін постачання 21-31 дні (днів) |
|
||||||||||||||||
|
|
FDS89161LZ | onsemi |
Description: MOSFET 2N-CH 100V 2.7A 8SOIC Packaging: Cut Tape (CT) Package / Case: 8-SOIC (0.154", 3.90mm Width) Mounting Type: Surface Mount Configuration: 2 N-Channel (Dual) Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) Power - Max: 1.6W Drain to Source Voltage (Vdss): 100V Current - Continuous Drain (Id) @ 25°C: 2.7A Input Capacitance (Ciss) (Max) @ Vds: 302pF @ 50V Rds On (Max) @ Id, Vgs: 105mOhm @ 2.7A, 10V Gate Charge (Qg) (Max) @ Vgs: 5.3nC @ 10V Vgs(th) (Max) @ Id: 2.2V @ 250µA Supplier Device Package: 8-SOIC Part Status: Active |
на замовлення 7139 шт: термін постачання 21-31 дні (днів) |
|
||||||||||||||||
|
|
FAN3278TMX | onsemi |
Description: IC GATE DRVR HALF-BRIDGE 8SOIC Packaging: Cut Tape (CT) Package / Case: 8-SOIC (0.154", 3.90mm Width) Mounting Type: Surface Mount Operating Temperature: -55°C ~ 150°C (TJ) Voltage - Supply: 8V ~ 27V Input Type: Inverting, Non-Inverting Supplier Device Package: 8-SOIC Rise / Fall Time (Typ): 21ns, 8ns Channel Type: Independent Driven Configuration: Half-Bridge Number of Drivers: 2 Gate Type: N-Channel, P-Channel MOSFET Logic Voltage - VIL, VIH: 0.8V, 2.25V Current - Peak Output (Source, Sink): 1A, 1.5A Part Status: Active DigiKey Programmable: Not Verified |
на замовлення 28170 шт: термін постачання 21-31 дні (днів) |
|
||||||||||||||||
|
|
FDMS4435BZ | onsemi |
Description: MOSFET P-CH 30V 9A/18A 8PQFN Packaging: Cut Tape (CT) Package / Case: 8-PowerTDFN Mounting Type: Surface Mount Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: P-Channel Current - Continuous Drain (Id) @ 25°C: 9A (Ta), 18A (Tc) Rds On (Max) @ Id, Vgs: 20mOhm @ 9A, 10V Power Dissipation (Max): 2.5W (Ta), 39W (Tc) Vgs(th) (Max) @ Id: 3V @ 250µA Supplier Device Package: 8-PQFN (5x6) Part Status: Active Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Vgs (Max): ±25V Drain to Source Voltage (Vdss): 30 V Gate Charge (Qg) (Max) @ Vgs: 47 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 2050 pF @ 15 V |
на замовлення 17626 шт: термін постачання 21-31 дні (днів) |
|
||||||||||||||||
|
|
FDD18N20LZ | onsemi |
Description: MOSFET N-CH 200V 16A DPAK Packaging: Cut Tape (CT) Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63 Mounting Type: Surface Mount Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 16A (Tc) Rds On (Max) @ Id, Vgs: 125mOhm @ 8A, 10V Power Dissipation (Max): 89W (Tc) Vgs(th) (Max) @ Id: 2.5V @ 250µA Supplier Device Package: TO-252AA Part Status: Active Drive Voltage (Max Rds On, Min Rds On): 5V, 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 200 V Gate Charge (Qg) (Max) @ Vgs: 40 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 1575 pF @ 25 V |
на замовлення 8331 шт: термін постачання 21-31 дні (днів) |
|
||||||||||||||||
 |
FXMAR2102L8X | onsemi |
Description: IC XLTR VL BIDIR 8-MICROPAK Features: Auto-Direction Sensing Packaging: Cut Tape (CT) Package / Case: 8-UFQFN Output Type: Open Drain, Tri-State Mounting Type: Surface Mount Operating Temperature: -40°C ~ 85°C (TA) Data Rate: 50MHz Supplier Device Package: 8-MicroPak™ Channel Type: Bidirectional Translator Type: Voltage Level Channels per Circuit: 2 Voltage - VCCA: 1.65 V ~ 5.5 V Voltage - VCCB: 1.65 V ~ 5.5 V Number of Circuits: 1 |
на замовлення 28726 шт: термін постачання 21-31 дні (днів) |
|
||||||||||||||||
 |
FXMAR2102UMX | onsemi |
Description: IC TRANSLTR BIDIRECTIONAL 8UMLP Features: Auto-Direction Sensing Packaging: Cut Tape (CT) Package / Case: 8-UFQFN Output Type: Open Drain, Tri-State Mounting Type: Surface Mount Operating Temperature: -40°C ~ 85°C (TA) Data Rate: 50MHz Supplier Device Package: 8-UMLP (1.2x1.4) Channel Type: Bidirectional Translator Type: Voltage Level Channels per Circuit: 2 Voltage - VCCA: 1.65 V ~ 5.5 V Voltage - VCCB: 1.65 V ~ 5.5 V Part Status: Active Number of Circuits: 1 |
на замовлення 16841 шт: термін постачання 21-31 дні (днів) |
|
||||||||||||||||
|
|
FDD390N15ALZ | onsemi |
Description: MOSFET N-CH 150V 26A DPAK Packaging: Cut Tape (CT) Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63 Mounting Type: Surface Mount Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 26A (Tc) Rds On (Max) @ Id, Vgs: 42mOhm @ 26A, 10V Power Dissipation (Max): 63W (Tc) Vgs(th) (Max) @ Id: 2.8V @ 250µA Supplier Device Package: TO-252AA Part Status: Active Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 150 V Gate Charge (Qg) (Max) @ Vgs: 39 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 1760 pF @ 75 V |
на замовлення 3828 шт: термін постачання 21-31 дні (днів) |
|
||||||||||||||||
 |
FAN4146ESX | onsemi |
Description: IC CTLR LOW PWR AC GFI 6-SSOT Packaging: Cut Tape (CT) Package / Case: SOT-23-6 Thin, TSOT-23-6 Mounting Type: Surface Mount Operating Temperature: -25°C ~ 80°C Applications: Ground Fault Protection Current - Supply: 400µA Supplier Device Package: SuperSOT™-6 |
на замовлення 3190 шт: термін постачання 21-31 дні (днів) |
|
||||||||||||||||
|
|
FAN4147SX | onsemi |
Description: IC CTLR LOW PWR AC GFI 6-SSOT Packaging: Cut Tape (CT) Package / Case: SOT-23-6 Thin, TSOT-23-6 Mounting Type: Surface Mount Operating Temperature: -35°C ~ 85°C Applications: Ground Fault Protection Current - Supply: 400µA Supplier Device Package: SuperSOT™-6 |
на замовлення 1 шт: термін постачання 21-31 дні (днів) |
В кошику од. на суму грн. | ||||||||||||||||
|
|
FDD5N50NZTM | onsemi |
Description: MOSFET N-CH 500V 4A DPAK Packaging: Cut Tape (CT) Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63 Mounting Type: Surface Mount Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 4A (Tc) Rds On (Max) @ Id, Vgs: 1.5Ohm @ 2A, 10V Power Dissipation (Max): 62W (Tc) Vgs(th) (Max) @ Id: 5V @ 250µA Supplier Device Package: TO-252AA Part Status: Active Drive Voltage (Max Rds On, Min Rds On): 10V Vgs (Max): ±25V Drain to Source Voltage (Vdss): 500 V Gate Charge (Qg) (Max) @ Vgs: 12 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 440 pF @ 25 V |
на замовлення 1968 шт: термін постачання 21-31 дні (днів) |
|
||||||||||||||||
 |
FAN6982MY | onsemi |
Description: IC PFC CTRLR CCM 75KHZ 14SOIC Packaging: Cut Tape (CT) Package / Case: 14-SOIC (0.154", 3.90mm Width) Mounting Type: Surface Mount Operating Temperature: -40°C ~ 105°C Voltage - Supply: 11V ~ 22V Frequency - Switching: 50kHz ~ 75kHz Mode: Continuous Conduction (CCM) Supplier Device Package: 14-SOIC Part Status: Obsolete Current - Startup: 30 µA |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||||||||||
 |
FAN7389MX1 | onsemi |
Description: IC GATE DRVR HALF-BRIDGE 28SOIC Packaging: Cut Tape (CT) Package / Case: 28-SOIC (0.295", 7.50mm Width) Mounting Type: Surface Mount Operating Temperature: -40°C ~ 150°C (TJ) Voltage - Supply: 10V ~ 20V Input Type: Non-Inverting High Side Voltage - Max (Bootstrap): 600 V Supplier Device Package: 28-SOIC Rise / Fall Time (Typ): 50ns, 30ns Channel Type: 3-Phase Driven Configuration: Half-Bridge Number of Drivers: 6 Gate Type: IGBT, MOSFET (N-Channel) Logic Voltage - VIL, VIH: 0.8V, 2.5V Current - Peak Output (Source, Sink): 350mA, 650mA Part Status: Not For New Designs DigiKey Programmable: Not Verified |
на замовлення 968 шт: термін постачання 21-31 дні (днів) |
|
||||||||||||||||
 |
FSA2466UMX | onsemi |
Description: IC SWITCH DPDT X 2 1.6OHM 16UMLP Packaging: Cut Tape (CT) Package / Case: 16-UFQFN Mounting Type: Surface Mount Operating Temperature: -40°C ~ 85°C (TA) On-State Resistance (Max): 1.6Ohm (Typ) -3db Bandwidth: 240MHz Supplier Device Package: 16-UMLP (1.8x2.6) Voltage - Supply, Single (V+): 1.65V ~ 4.45V Charge Injection: 8pC Crosstalk: -90dB @ 100kHz Switch Circuit: DPDT Multiplexer/Demultiplexer Circuit: 2:2 Channel-to-Channel Matching (ΔRon): 40mOhm Switch Time (Ton, Toff) (Max): 50ns, 32ns Channel Capacitance (CS(off), CD(off)): 6pF Current - Leakage (IS(off)) (Max): 10nA Part Status: Last Time Buy Number of Circuits: 2 |
на замовлення 25881 шт: термін постачання 21-31 дні (днів) |
|
||||||||||||||||
 |
FDMS7620S | onsemi |
Description: MOSFET 2N-CH 30V 10.1A POWER56 Packaging: Cut Tape (CT) Package / Case: 8-PowerWDFN Mounting Type: Surface Mount Configuration: 2 N-Channel (Dual) Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) Power - Max: 1W Drain to Source Voltage (Vdss): 30V Current - Continuous Drain (Id) @ 25°C: 10.1A, 12.4A Input Capacitance (Ciss) (Max) @ Vds: 608pF @ 15V Rds On (Max) @ Id, Vgs: 20mOhm @ 10.1A, 10V Gate Charge (Qg) (Max) @ Vgs: 11nC @ 10V FET Feature: Logic Level Gate Vgs(th) (Max) @ Id: 3V @ 250µA Supplier Device Package: Power56 Part Status: Active |
на замовлення 27000 шт: термін постачання 21-31 дні (днів) |
|
||||||||||||||||
|
|
FDMC86244 | onsemi |
Description: MOSFET N-CH 150V 2.8A/9.4A 8MLP Packaging: Cut Tape (CT) Package / Case: 8-PowerWDFN Mounting Type: Surface Mount Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 2.8A (Ta), 9.4A (Tc) Rds On (Max) @ Id, Vgs: 134mOhm @ 2.8A, 10V Power Dissipation (Max): 2.3W (Ta), 26W (Tc) Vgs(th) (Max) @ Id: 4V @ 250µA Supplier Device Package: 8-MLP (3.3x3.3) Part Status: Active Drive Voltage (Max Rds On, Min Rds On): 6V, 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 150 V Gate Charge (Qg) (Max) @ Vgs: 5.9 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 345 pF @ 75 V |
на замовлення 6873 шт: термін постачання 21-31 дні (днів) |
|
||||||||||||||||
 |
FDS89141 | onsemi |
Description: MOSFET 2N-CH 100V 3.5A 8SOIC Packaging: Cut Tape (CT) Package / Case: 8-SOIC (0.154", 3.90mm Width) Mounting Type: Surface Mount Configuration: 2 N-Channel (Dual) Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) Power - Max: 1.6W Drain to Source Voltage (Vdss): 100V Current - Continuous Drain (Id) @ 25°C: 3.5A Input Capacitance (Ciss) (Max) @ Vds: 398pF @ 50V Rds On (Max) @ Id, Vgs: 62mOhm @ 3.5A, 10V Gate Charge (Qg) (Max) @ Vgs: 7.1nC @ 10V FET Feature: Logic Level Gate Vgs(th) (Max) @ Id: 4V @ 250µA Supplier Device Package: 8-SOIC Part Status: Active |
на замовлення 40293 шт: термін постачання 21-31 дні (днів) |
|
||||||||||||||||
 |
FQS4903TF | onsemi |
Description: MOSFET 2N-CH 500V 0.37A 8SOP Packaging: Cut Tape (CT) Package / Case: 8-SOIC (0.154", 3.90mm Width) Mounting Type: Surface Mount Configuration: 2 N-Channel (Dual) Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) Power - Max: 2W Drain to Source Voltage (Vdss): 500V Current - Continuous Drain (Id) @ 25°C: 370mA Input Capacitance (Ciss) (Max) @ Vds: 200pF @ 25V Rds On (Max) @ Id, Vgs: 6.2Ohm @ 185mA, 10V Gate Charge (Qg) (Max) @ Vgs: 8.2nC @ 10V Vgs(th) (Max) @ Id: 4V @ 250µA Supplier Device Package: 8-SOIC |
на замовлення 113 шт: термін постачання 21-31 дні (днів) |
|
||||||||||||||||
|
|
FDMS8020 | onsemi |
Description: MOSFET N-CH 30V 26A/42A 8PQFN Packaging: Cut Tape (CT) Package / Case: 8-PowerTDFN Mounting Type: Surface Mount Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 26A (Ta), 42A (Tc) Rds On (Max) @ Id, Vgs: 2.5mOhm @ 26A, 10V Power Dissipation (Max): 2.5W (Ta), 65W (Tc) Vgs(th) (Max) @ Id: 3V @ 250µA Supplier Device Package: 8-PQFN (5x6) Part Status: Obsolete Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 30 V Gate Charge (Qg) (Max) @ Vgs: 61 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 3800 pF @ 15 V |
на замовлення 3000 шт: термін постачання 21-31 дні (днів) |
|
||||||||||||||||
|
|
FDT86244 | onsemi |
Description: MOSFET N-CH 150V 2.8A SOT223-4 Packaging: Cut Tape (CT) Package / Case: TO-261-4, TO-261AA Mounting Type: Surface Mount Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 2.8A (Tc) Rds On (Max) @ Id, Vgs: 128mOhm @ 2.8A, 10V Power Dissipation (Max): 2.2W (Ta) Vgs(th) (Max) @ Id: 4V @ 250µA Supplier Device Package: SOT-223-4 Part Status: Active Drive Voltage (Max Rds On, Min Rds On): 6V, 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 150 V Gate Charge (Qg) (Max) @ Vgs: 7 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 395 pF @ 75 V |
на замовлення 5488 шт: термін постачання 21-31 дні (днів) |
|
||||||||||||||||
|
|
FDT86246 | onsemi |
Description: MOSFET N-CH 150V 2A SOT223-4 Packaging: Cut Tape (CT) Package / Case: TO-261-4, TO-261AA Mounting Type: Surface Mount Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 2A (Ta) Rds On (Max) @ Id, Vgs: 236mOhm @ 2A, 10V Power Dissipation (Max): 2.2W (Ta) Vgs(th) (Max) @ Id: 4V @ 250µA Supplier Device Package: SOT-223-4 Part Status: Active Drive Voltage (Max Rds On, Min Rds On): 6V, 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 150 V Gate Charge (Qg) (Max) @ Vgs: 4 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 215 pF @ 75 V |
на замовлення 5672 шт: термін постачання 21-31 дні (днів) |
|
||||||||||||||||
 |
EGP10G | onsemi |
Description: DIODE STANDARD 400V 1A DO41 Packaging: Cut Tape (CT) Package / Case: DO-204AL, DO-41, Axial Mounting Type: Through Hole Speed: Fast Recovery =< 500ns, > 200mA (Io) Reverse Recovery Time (trr): 50 ns Technology: Standard Current - Average Rectified (Io): 1A Supplier Device Package: DO-41 Operating Temperature - Junction: -65°C ~ 150°C Part Status: Active Voltage - DC Reverse (Vr) (Max): 400 V Voltage - Forward (Vf) (Max) @ If: 1.25 V @ 1 A Current - Reverse Leakage @ Vr: 5 µA @ 400 V |
на замовлення 4032 шт: термін постачання 21-31 дні (днів) |
|
||||||||||||||||
|
|
FDMS7660AS | onsemi |
Description: MOSFET N-CH 30V 26A/42A 8PQFN Packaging: Cut Tape (CT) Package / Case: 8-PowerTDFN Mounting Type: Surface Mount Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 26A (Ta), 42A (Tc) Rds On (Max) @ Id, Vgs: 2.4mOhm @ 25A, 10V Power Dissipation (Max): 2.5W (Ta), 83W (Tc) Vgs(th) (Max) @ Id: 3V @ 1mA Supplier Device Package: 8-PQFN (5x6) Part Status: Active Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 30 V Gate Charge (Qg) (Max) @ Vgs: 90 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 6120 pF @ 15 V |
на замовлення 7172 шт: термін постачання 21-31 дні (днів) |
|
||||||||||||||||
 |
FSUSB74MPX | onsemi |
Description: IC USB MUX/SWITCH 16MLP Features: Break-Before-Make, USB 2.0 Packaging: Cut Tape (CT) Package / Case: 16-WFQFN Exposed Pad Mounting Type: Surface Mount Operating Temperature: -40°C ~ 85°C (TA) Applications: USB On-State Resistance (Max): 9Ohm Supplier Device Package: 16-MLP (3x3) Voltage - Supply, Single (V+): 2.5V ~ 4.4V Multiplexer/Demultiplexer Circuit: 4:1 Part Status: Active Number of Channels: 1 |
на замовлення 18313 шт: термін постачання 21-31 дні (днів) |
|
||||||||||||||||
|
|
FL6300AMY | onsemi |
Description: IC LED DRIVER CTRLR PWM 8SOIC Packaging: Cut Tape (CT) Package / Case: 8-SOIC (0.154", 3.90mm Width) Mounting Type: Surface Mount Number of Outputs: 1 Type: DC DC Controller Operating Temperature: -40°C ~ 125°C (TA) Applications: Lighting Internal Switch(s): No Topology: Flyback Supplier Device Package: 8-SOIC Dimming: PWM Voltage - Supply (Min): 10V Voltage - Supply (Max): 25V Part Status: Obsolete |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||||||||||
|
|
FDMS86105 | onsemi |
Description: MOSFET N-CH 100V 6A/26A 8PQFN Packaging: Cut Tape (CT) Package / Case: 8-PowerTDFN Mounting Type: Surface Mount Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 6A (Ta), 26A (Tc) Rds On (Max) @ Id, Vgs: 34mOhm @ 6A, 10V Power Dissipation (Max): 2.5W (Ta), 48W (Tc) Vgs(th) (Max) @ Id: 4V @ 250µA Supplier Device Package: 8-PQFN (5x6) Part Status: Active Drive Voltage (Max Rds On, Min Rds On): 6V, 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 100 V Gate Charge (Qg) (Max) @ Vgs: 11 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 645 pF @ 50 V |
на замовлення 9895 шт: термін постачання 21-31 дні (днів) |
|
||||||||||||||||
 |
FDMC8030 | onsemi |
Description: MOSFET 2N-CH 40V 12A 8PWR33 Packaging: Cut Tape (CT) Package / Case: 8-PowerWDFN Mounting Type: Surface Mount Configuration: 2 N-Channel (Dual) Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) Power - Max: 800mW Drain to Source Voltage (Vdss): 40V Current - Continuous Drain (Id) @ 25°C: 12A Input Capacitance (Ciss) (Max) @ Vds: 1975pF @ 20V Rds On (Max) @ Id, Vgs: 10mOhm @ 12A, 10V Gate Charge (Qg) (Max) @ Vgs: 30nC @ 10V FET Feature: Logic Level Gate Vgs(th) (Max) @ Id: 2.8V @ 250µA Supplier Device Package: 8-Power33 (3x3) |
на замовлення 8259 шт: термін постачання 21-31 дні (днів) |
|
||||||||||||||||
|
|
FDMS8018 | onsemi |
Description: MOSFET N-CH 30V 30A/120A 8PQFN Packaging: Cut Tape (CT) Package / Case: 8-PowerTDFN Mounting Type: Surface Mount Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 30A (Ta), 120A (Tc) Rds On (Max) @ Id, Vgs: 1.8mOhm @ 30A, 10V Power Dissipation (Max): 2.5W (Ta), 83W (Tc) Vgs(th) (Max) @ Id: 3V @ 250µA Supplier Device Package: 8-PQFN (5x6) Part Status: Active Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 30 V Gate Charge (Qg) (Max) @ Vgs: 61 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 5235 pF @ 15 V |
на замовлення 20164 шт: термін постачання 21-31 дні (днів) |
|
||||||||||||||||
|
|
FDMS86310 | onsemi |
Description: MOSFET N-CH 80V 17A/50A 8PQFN Packaging: Cut Tape (CT) Package / Case: 8-PowerTDFN Mounting Type: Surface Mount Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 17A (Ta), 50A (Tc) Rds On (Max) @ Id, Vgs: 4.8mOhm @ 17A, 10V Power Dissipation (Max): 2.5W (Ta), 96W (Tc) Vgs(th) (Max) @ Id: 4.5V @ 250µA Supplier Device Package: 8-PQFN (5x6) Part Status: Active Drive Voltage (Max Rds On, Min Rds On): 8V, 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 80 V Gate Charge (Qg) (Max) @ Vgs: 95 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 6290 pF @ 40 V |
на замовлення 3173 шт: термін постачання 21-31 дні (днів) |
|
||||||||||||||||
|
|
FAN7081MX-GF085 | onsemi |
Description: IC GATE DRVR HIGH-SIDE 8SOIC Packaging: Cut Tape (CT) Package / Case: 8-SOIC (0.154", 3.90mm Width) Mounting Type: Surface Mount Operating Temperature: -40°C ~ 150°C (TJ) Voltage - Supply: 10V ~ 20V Input Type: Inverting High Side Voltage - Max (Bootstrap): 600 V Supplier Device Package: 8-SOIC Rise / Fall Time (Typ): 15ns, 10ns Channel Type: Single Driven Configuration: High-Side Number of Drivers: 1 Gate Type: IGBT, N-Channel MOSFET Current - Peak Output (Source, Sink): 250mA, 500mA Grade: Automotive Part Status: Active DigiKey Programmable: Not Verified Qualification: AEC-Q100 |
на замовлення 2473 шт: термін постачання 21-31 дні (днів) |
|
||||||||||||||||
|
|
FDMS86102LZ | onsemi |
Description: MOSFET N-CH 100V 7A/22A 8PQFN Packaging: Cut Tape (CT) Package / Case: 8-PowerTDFN Mounting Type: Surface Mount Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 7A (Ta), 22A (Tc) Rds On (Max) @ Id, Vgs: 25mOhm @ 7A, 10V Power Dissipation (Max): 2.5W (Ta), 69W (Tc) Vgs(th) (Max) @ Id: 2.5V @ 250µA Supplier Device Package: 8-PQFN (5x6) Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 100 V Gate Charge (Qg) (Max) @ Vgs: 22 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 1305 pF @ 50 V |
на замовлення 46647 шт: термін постачання 21-31 дні (днів) |
|
||||||||||||||||
|
|
FDS86140 | onsemi |
Description: MOSFET N-CH 100V 11.2A 8SOIC Packaging: Cut Tape (CT) Package / Case: 8-SOIC (0.154", 3.90mm Width) Mounting Type: Surface Mount Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 11.2A (Ta) Rds On (Max) @ Id, Vgs: 9.8mOhm @ 11.2A, 10V Power Dissipation (Max): 2.5W (Ta), 5W (Tc) Vgs(th) (Max) @ Id: 4V @ 250µA Supplier Device Package: 8-SOIC Part Status: Active Drive Voltage (Max Rds On, Min Rds On): 6V, 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 100 V Gate Charge (Qg) (Max) @ Vgs: 41 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 2580 pF @ 50 V |
на замовлення 2347 шт: термін постачання 21-31 дні (днів) |
|
||||||||||||||||
 |
FDMC8321L | onsemi |
Description: MOSFET N-CH 40V 22A/49A POWER33 Packaging: Cut Tape (CT) Package / Case: 8-PowerTDFN Mounting Type: Surface Mount Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 22A (Ta), 49A (Tc) Rds On (Max) @ Id, Vgs: 2.5mOhm @ 22A, 10V Power Dissipation (Max): 2.3W (Ta), 40W (Tc) Vgs(th) (Max) @ Id: 3V @ 250µA Supplier Device Package: Power33 Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 40 V Gate Charge (Qg) (Max) @ Vgs: 61 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 3900 pF @ 20 V |
на замовлення 14448 шт: термін постачання 21-31 дні (днів) |
|
||||||||||||||||
|
|
FDMC89521L | onsemi |
Description: MOSFET 2N-CH 60V 8.2A 8PWR33 Packaging: Cut Tape (CT) Package / Case: 8-PowerWDFN Mounting Type: Surface Mount Configuration: 2 N-Channel (Dual) Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) Power - Max: 1.9W (Ta), 16W (Tc) Drain to Source Voltage (Vdss): 60V Current - Continuous Drain (Id) @ 25°C: 8.2A (Ta) Input Capacitance (Ciss) (Max) @ Vds: 1635pF @ 30V Rds On (Max) @ Id, Vgs: 17mOhm @ 8.2A, 10V Gate Charge (Qg) (Max) @ Vgs: 24nC @ 10V FET Feature: Logic Level Gate Vgs(th) (Max) @ Id: 3V @ 250µA Supplier Device Package: 8-Power33 (3x3) |
на замовлення 5311 шт: термін постачання 21-31 дні (днів) |
|
| FDMA8878 |
|
Виробник: onsemi
Description: MOSFET N-CH 30V 9A/10A 6MICROFET
Packaging: Cut Tape (CT)
Package / Case: 6-WDFN Exposed Pad
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 9A (Ta), 10A (Tc)
Rds On (Max) @ Id, Vgs: 16mOhm @ 9A, 10V
Power Dissipation (Max): 2.4W (Ta)
Vgs(th) (Max) @ Id: 3V @ 250µA
Supplier Device Package: 6-MicroFET (2x2)
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 30 V
Gate Charge (Qg) (Max) @ Vgs: 12 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 720 pF @ 15 V
Description: MOSFET N-CH 30V 9A/10A 6MICROFET
Packaging: Cut Tape (CT)
Package / Case: 6-WDFN Exposed Pad
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 9A (Ta), 10A (Tc)
Rds On (Max) @ Id, Vgs: 16mOhm @ 9A, 10V
Power Dissipation (Max): 2.4W (Ta)
Vgs(th) (Max) @ Id: 3V @ 250µA
Supplier Device Package: 6-MicroFET (2x2)
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 30 V
Gate Charge (Qg) (Max) @ Vgs: 12 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 720 pF @ 15 V
на замовлення 13092 шт:
термін постачання 21-31 дні (днів)| Кількість | Ціна |
|---|---|
| 3+ | 159.25 грн |
| 10+ | 97.91 грн |
| 100+ | 66.47 грн |
| 500+ | 49.76 грн |
| 1000+ | 47.78 грн |
| NC7WZ07FHX |
|
Виробник: onsemi
Description: IC BUF NON-INVERT 5.5V 6MICROPK2
Packaging: Cut Tape (CT)
Package / Case: 6-UFDFN
Output Type: Open Drain
Mounting Type: Surface Mount
Number of Elements: 2
Logic Type: Buffer, Non-Inverting
Operating Temperature: -40°C ~ 85°C (TA)
Voltage - Supply: 1.65V ~ 5.5V
Number of Bits per Element: 1
Current - Output High, Low: -, 32mA
Supplier Device Package: 6-MicroPak2™
Description: IC BUF NON-INVERT 5.5V 6MICROPK2
Packaging: Cut Tape (CT)
Package / Case: 6-UFDFN
Output Type: Open Drain
Mounting Type: Surface Mount
Number of Elements: 2
Logic Type: Buffer, Non-Inverting
Operating Temperature: -40°C ~ 85°C (TA)
Voltage - Supply: 1.65V ~ 5.5V
Number of Bits per Element: 1
Current - Output High, Low: -, 32mA
Supplier Device Package: 6-MicroPak2™
на замовлення 6300 шт:
термін постачання 21-31 дні (днів)| Кількість | Ціна |
|---|---|
| 20+ | 17.03 грн |
| 29+ | 11.40 грн |
| 33+ | 10.10 грн |
| 100+ | 8.10 грн |
| 250+ | 7.45 грн |
| 500+ | 7.05 грн |
| 1000+ | 6.61 грн |
| 2500+ | 6.41 грн |
| FDMS7678 |
|
Виробник: onsemi
Description: MOSFET N-CH 30V 17.5A/26A 8PQFN
Packaging: Cut Tape (CT)
Package / Case: 8-PowerTDFN
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 17.5A (Ta), 26A (Tc)
Rds On (Max) @ Id, Vgs: 5.5mOhm @ 17.5A, 10V
Power Dissipation (Max): 2.3W (Ta), 41W (Tc)
Vgs(th) (Max) @ Id: 3V @ 250µA
Supplier Device Package: 8-PQFN (5x6)
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 30 V
Gate Charge (Qg) (Max) @ Vgs: 39 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 2410 pF @ 15 V
Description: MOSFET N-CH 30V 17.5A/26A 8PQFN
Packaging: Cut Tape (CT)
Package / Case: 8-PowerTDFN
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 17.5A (Ta), 26A (Tc)
Rds On (Max) @ Id, Vgs: 5.5mOhm @ 17.5A, 10V
Power Dissipation (Max): 2.3W (Ta), 41W (Tc)
Vgs(th) (Max) @ Id: 3V @ 250µA
Supplier Device Package: 8-PQFN (5x6)
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 30 V
Gate Charge (Qg) (Max) @ Vgs: 39 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 2410 pF @ 15 V
на замовлення 3000 шт:
термін постачання 21-31 дні (днів)| Кількість | Ціна |
|---|---|
| 5+ | 68.98 грн |
| 10+ | 58.14 грн |
| 100+ | 40.27 грн |
| 500+ | 31.57 грн |
| 1000+ | 26.87 грн |
| FDMC86116LZ |
|
Виробник: onsemi
Description: MOSFET N-CH 100V 3.3A/7.5A 8MLP
Packaging: Cut Tape (CT)
Package / Case: 8-PowerWDFN
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 3.3A (Ta), 7.5A (Tc)
Rds On (Max) @ Id, Vgs: 103mOhm @ 3.3A, 10V
Power Dissipation (Max): 2.3W (Ta), 19W (Tc)
Vgs(th) (Max) @ Id: 2.2V @ 250µA
Supplier Device Package: 8-MLP (3.3x3.3)
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 100 V
Gate Charge (Qg) (Max) @ Vgs: 6 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 310 pF @ 50 V
Description: MOSFET N-CH 100V 3.3A/7.5A 8MLP
Packaging: Cut Tape (CT)
Package / Case: 8-PowerWDFN
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 3.3A (Ta), 7.5A (Tc)
Rds On (Max) @ Id, Vgs: 103mOhm @ 3.3A, 10V
Power Dissipation (Max): 2.3W (Ta), 19W (Tc)
Vgs(th) (Max) @ Id: 2.2V @ 250µA
Supplier Device Package: 8-MLP (3.3x3.3)
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 100 V
Gate Charge (Qg) (Max) @ Vgs: 6 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 310 pF @ 50 V
на замовлення 17602 шт:
термін постачання 21-31 дні (днів)| Кількість | Ціна |
|---|---|
| 3+ | 114.11 грн |
| 10+ | 69.46 грн |
| 100+ | 46.36 грн |
| 500+ | 34.19 грн |
| 1000+ | 31.19 грн |
| FPF1320UCX |
|
Виробник: onsemi
Description: IC PWR SWITCH P-CHAN 2:1 6WLCSP
Features: Slew Rate Controlled
Packaging: Cut Tape (CT)
Package / Case: 6-UFBGA, WLCSP
Output Type: P-Channel
Mounting Type: Surface Mount
Number of Outputs: 1
Interface: On/Off
Switch Type: General Purpose
Operating Temperature: -40°C ~ 85°C (TA)
Output Configuration: High Side
Rds On (Typ): 42mOhm
Input Type: Non-Inverting
Voltage - Load: 1.5V ~ 5.5V
Voltage - Supply (Vcc/Vdd): Not Required
Current - Output (Max): 1.5A
Ratio - Input:Output: 2:1
Supplier Device Package: 6-WLCSP (0.96x1.66)
Fault Protection: Reverse Current
Part Status: Active
Description: IC PWR SWITCH P-CHAN 2:1 6WLCSP
Features: Slew Rate Controlled
Packaging: Cut Tape (CT)
Package / Case: 6-UFBGA, WLCSP
Output Type: P-Channel
Mounting Type: Surface Mount
Number of Outputs: 1
Interface: On/Off
Switch Type: General Purpose
Operating Temperature: -40°C ~ 85°C (TA)
Output Configuration: High Side
Rds On (Typ): 42mOhm
Input Type: Non-Inverting
Voltage - Load: 1.5V ~ 5.5V
Voltage - Supply (Vcc/Vdd): Not Required
Current - Output (Max): 1.5A
Ratio - Input:Output: 2:1
Supplier Device Package: 6-WLCSP (0.96x1.66)
Fault Protection: Reverse Current
Part Status: Active
на замовлення 13253 шт:
термін постачання 21-31 дні (днів)| Кількість | Ціна |
|---|---|
| 3+ | 117.52 грн |
| 10+ | 69.95 грн |
| 25+ | 58.55 грн |
| 100+ | 42.84 грн |
| 250+ | 36.90 грн |
| 500+ | 33.24 грн |
| 1000+ | 29.68 грн |
| FDD5N60NZTM |
|
Виробник: onsemi
Description: MOSFET N-CH 600V 4A DPAK
Packaging: Cut Tape (CT)
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 4A (Tc)
Rds On (Max) @ Id, Vgs: 2Ohm @ 2A, 10V
Power Dissipation (Max): 83W (Tc)
Vgs(th) (Max) @ Id: 5V @ 250µA
Supplier Device Package: TO-252AA
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±25V
Drain to Source Voltage (Vdss): 600 V
Gate Charge (Qg) (Max) @ Vgs: 13 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 600 pF @ 25 V
Description: MOSFET N-CH 600V 4A DPAK
Packaging: Cut Tape (CT)
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 4A (Tc)
Rds On (Max) @ Id, Vgs: 2Ohm @ 2A, 10V
Power Dissipation (Max): 83W (Tc)
Vgs(th) (Max) @ Id: 5V @ 250µA
Supplier Device Package: TO-252AA
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±25V
Drain to Source Voltage (Vdss): 600 V
Gate Charge (Qg) (Max) @ Vgs: 13 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 600 pF @ 25 V
на замовлення 35955 шт:
термін постачання 21-31 дні (днів)| Кількість | Ціна |
|---|---|
| 3+ | 126.89 грн |
| 10+ | 77.25 грн |
| 100+ | 51.75 грн |
| 500+ | 38.31 грн |
| 1000+ | 35.01 грн |
| FDD7N25LZTM |
|
Виробник: onsemi
Description: MOSFET N-CH 250V 6.2A DPAK
Packaging: Cut Tape (CT)
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 6.2A (Tc)
Rds On (Max) @ Id, Vgs: 550mOhm @ 3.1A, 10V
Power Dissipation (Max): 56W (Tc)
Vgs(th) (Max) @ Id: 2V @ 250µA
Supplier Device Package: TO-252AA
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 250 V
Gate Charge (Qg) (Max) @ Vgs: 16 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 635 pF @ 25 V
Description: MOSFET N-CH 250V 6.2A DPAK
Packaging: Cut Tape (CT)
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 6.2A (Tc)
Rds On (Max) @ Id, Vgs: 550mOhm @ 3.1A, 10V
Power Dissipation (Max): 56W (Tc)
Vgs(th) (Max) @ Id: 2V @ 250µA
Supplier Device Package: TO-252AA
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 250 V
Gate Charge (Qg) (Max) @ Vgs: 16 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 635 pF @ 25 V
на замовлення 8182 шт:
термін постачання 21-31 дні (днів)| Кількість | Ціна |
|---|---|
| 4+ | 97.08 грн |
| 10+ | 58.88 грн |
| 100+ | 38.92 грн |
| 500+ | 28.48 грн |
| 1000+ | 25.89 грн |
| FDT3N40TF |
|
Виробник: onsemi
Description: MOSFET N-CH 400V 2A SOT223-4
Packaging: Cut Tape (CT)
Package / Case: TO-261-4, TO-261AA
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 2A (Tc)
Rds On (Max) @ Id, Vgs: 3.4Ohm @ 1A, 10V
Power Dissipation (Max): 2W (Tc)
Vgs(th) (Max) @ Id: 5V @ 250µA
Supplier Device Package: SOT-223-4
Part Status: Obsolete
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±30V
Drain to Source Voltage (Vdss): 400 V
Gate Charge (Qg) (Max) @ Vgs: 6 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 225 pF @ 25 V
Description: MOSFET N-CH 400V 2A SOT223-4
Packaging: Cut Tape (CT)
Package / Case: TO-261-4, TO-261AA
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 2A (Tc)
Rds On (Max) @ Id, Vgs: 3.4Ohm @ 1A, 10V
Power Dissipation (Max): 2W (Tc)
Vgs(th) (Max) @ Id: 5V @ 250µA
Supplier Device Package: SOT-223-4
Part Status: Obsolete
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±30V
Drain to Source Voltage (Vdss): 400 V
Gate Charge (Qg) (Max) @ Vgs: 6 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 225 pF @ 25 V
товару немає в наявності
В кошику
од. на суму грн.
| FOD8321R2 |
|
Виробник: onsemi
Description: OPTOISO 5KV 1CH GATE DRIVER 5SOP
Packaging: Cut Tape (CT)
Package / Case: 6-SOIC (0.346", 8.80mm Width), 5 Leads
Mounting Type: Surface Mount
Operating Temperature: -40°C ~ 100°C
Voltage - Forward (Vf) (Typ): 1.5V
Current - Peak Output: 3A
Technology: Optical Coupling
Current - Output High, Low: 2A, 2A
Voltage - Isolation: 5000Vrms
Approval Agency: UL
Supplier Device Package: 5-SOP
Rise / Fall Time (Typ): 60ns, 60ns
Common Mode Transient Immunity (Min): 20kV/µs
Propagation Delay tpLH / tpHL (Max): 500ns, 500ns
Pulse Width Distortion (Max): 300ns
Part Status: Active
Number of Channels: 1
Current - DC Forward (If) (Max): 25 mA
Voltage - Output Supply: 16V ~ 30V
Description: OPTOISO 5KV 1CH GATE DRIVER 5SOP
Packaging: Cut Tape (CT)
Package / Case: 6-SOIC (0.346", 8.80mm Width), 5 Leads
Mounting Type: Surface Mount
Operating Temperature: -40°C ~ 100°C
Voltage - Forward (Vf) (Typ): 1.5V
Current - Peak Output: 3A
Technology: Optical Coupling
Current - Output High, Low: 2A, 2A
Voltage - Isolation: 5000Vrms
Approval Agency: UL
Supplier Device Package: 5-SOP
Rise / Fall Time (Typ): 60ns, 60ns
Common Mode Transient Immunity (Min): 20kV/µs
Propagation Delay tpLH / tpHL (Max): 500ns, 500ns
Pulse Width Distortion (Max): 300ns
Part Status: Active
Number of Channels: 1
Current - DC Forward (If) (Max): 25 mA
Voltage - Output Supply: 16V ~ 30V
на замовлення 7 шт:
термін постачання 21-31 дні (днів)| Кількість | Ціна |
|---|---|
| 1+ | 596.12 грн |
| FOD8321R2V |
|
Виробник: onsemi
Description: OPTOISO 5KV 1CH GATE DRIVER 5SOP
Description: OPTOISO 5KV 1CH GATE DRIVER 5SOP
на замовлення 179 шт:
термін постачання 21-31 дні (днів)| Кількість | Ціна |
|---|---|
| 1+ | 528.84 грн |
| 10+ | 360.33 грн |
| 100+ | 295.16 грн |
| FDMS8622 |
|
Виробник: onsemi
Description: MOSFET N-CH 100V 4.8A/16.5A 8QFN
Packaging: Cut Tape (CT)
Package / Case: 8-PowerTDFN
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 4.8A (Ta), 16.5A (Tc)
Rds On (Max) @ Id, Vgs: 56mOhm @ 4.8A, 10V
Power Dissipation (Max): 2.5W (Ta), 31W (Tc)
Vgs(th) (Max) @ Id: 4V @ 250µA
Supplier Device Package: 8-PQFN (5x6)
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 6V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 100 V
Gate Charge (Qg) (Max) @ Vgs: 7 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 400 pF @ 50 V
Description: MOSFET N-CH 100V 4.8A/16.5A 8QFN
Packaging: Cut Tape (CT)
Package / Case: 8-PowerTDFN
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 4.8A (Ta), 16.5A (Tc)
Rds On (Max) @ Id, Vgs: 56mOhm @ 4.8A, 10V
Power Dissipation (Max): 2.5W (Ta), 31W (Tc)
Vgs(th) (Max) @ Id: 4V @ 250µA
Supplier Device Package: 8-PQFN (5x6)
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 6V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 100 V
Gate Charge (Qg) (Max) @ Vgs: 7 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 400 pF @ 50 V
на замовлення 9793 шт:
термін постачання 21-31 дні (днів)| Кількість | Ціна |
|---|---|
| 3+ | 150.73 грн |
| 10+ | 92.01 грн |
| 100+ | 61.96 грн |
| 500+ | 46.07 грн |
| 1000+ | 42.18 грн |
| FDD770N15A |
|
Виробник: onsemi
Description: MOSFET N CH 150V 18A DPAK
Packaging: Cut Tape (CT)
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 18A (Tc)
Rds On (Max) @ Id, Vgs: 77mOhm @ 12A, 10V
Power Dissipation (Max): 56.8W (Tc)
Vgs(th) (Max) @ Id: 4V @ 250µA
Supplier Device Package: TO-252AA
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 150 V
Gate Charge (Qg) (Max) @ Vgs: 11 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 765 pF @ 75 V
Description: MOSFET N CH 150V 18A DPAK
Packaging: Cut Tape (CT)
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 18A (Tc)
Rds On (Max) @ Id, Vgs: 77mOhm @ 12A, 10V
Power Dissipation (Max): 56.8W (Tc)
Vgs(th) (Max) @ Id: 4V @ 250µA
Supplier Device Package: TO-252AA
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 150 V
Gate Charge (Qg) (Max) @ Vgs: 11 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 765 pF @ 75 V
на замовлення 6760 шт:
термін постачання 21-31 дні (днів)| Кількість | Ціна |
|---|---|
| 3+ | 123.48 грн |
| 10+ | 75.61 грн |
| 100+ | 50.63 грн |
| 500+ | 37.44 грн |
| 1000+ | 34.20 грн |
| FAN3850AUC19X |
Виробник: onsemi
Description: IC AMP CLASS AB MONO 6WLCSP
Features: ADC, Microphone
Packaging: Cut Tape (CT)
Package / Case: 6-XFBGA, WLCSP
Output Type: 1-Channel (Mono)
Mounting Type: Surface Mount
Type: Class AB
Operating Temperature: -30°C ~ 85°C (TA)
Voltage - Supply: 1.64V ~ 3.63V
Supplier Device Package: 6-WLCSP (1.26x0.86)
Description: IC AMP CLASS AB MONO 6WLCSP
Features: ADC, Microphone
Packaging: Cut Tape (CT)
Package / Case: 6-XFBGA, WLCSP
Output Type: 1-Channel (Mono)
Mounting Type: Surface Mount
Type: Class AB
Operating Temperature: -30°C ~ 85°C (TA)
Voltage - Supply: 1.64V ~ 3.63V
Supplier Device Package: 6-WLCSP (1.26x0.86)
товару немає в наявності
В кошику
од. на суму грн.
| FDD7N60NZTM |
|
Виробник: onsemi
Description: MOSFET N-CH 600V 5.5A DPAK
Packaging: Cut Tape (CT)
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 5.5A (Tc)
Rds On (Max) @ Id, Vgs: 1.25Ohm @ 2.75A, 10V
Power Dissipation (Max): 90W (Tc)
Vgs(th) (Max) @ Id: 5V @ 250µA
Supplier Device Package: TO-252AA
Part Status: Obsolete
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±25V
Drain to Source Voltage (Vdss): 600 V
Gate Charge (Qg) (Max) @ Vgs: 17 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 730 pF @ 25 V
Description: MOSFET N-CH 600V 5.5A DPAK
Packaging: Cut Tape (CT)
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 5.5A (Tc)
Rds On (Max) @ Id, Vgs: 1.25Ohm @ 2.75A, 10V
Power Dissipation (Max): 90W (Tc)
Vgs(th) (Max) @ Id: 5V @ 250µA
Supplier Device Package: TO-252AA
Part Status: Obsolete
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±25V
Drain to Source Voltage (Vdss): 600 V
Gate Charge (Qg) (Max) @ Vgs: 17 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 730 pF @ 25 V
товару немає в наявності
В кошику
од. на суму грн.
| FT7522L6X |
|
Виробник: onsemi
Description: IC SUPERVISOR 6MICROPAK
Packaging: Cut Tape (CT)
Package / Case: 6-UFDFN
Mounting Type: Surface Mount
Output: Open Drain or Open Collector
Type: Reset Timer
Reset: Active Low
Operating Temperature: -40°C ~ 85°C (TA)
Reset Timeout: 320ms Minimum
Supplier Device Package: 6-MicroPak
DigiKey Programmable: Not Verified
Description: IC SUPERVISOR 6MICROPAK
Packaging: Cut Tape (CT)
Package / Case: 6-UFDFN
Mounting Type: Surface Mount
Output: Open Drain or Open Collector
Type: Reset Timer
Reset: Active Low
Operating Temperature: -40°C ~ 85°C (TA)
Reset Timeout: 320ms Minimum
Supplier Device Package: 6-MicroPak
DigiKey Programmable: Not Verified
на замовлення 29229 шт:
термін постачання 21-31 дні (днів)| Кількість | Ціна |
|---|---|
| 7+ | 50.24 грн |
| 10+ | 41.82 грн |
| 25+ | 39.00 грн |
| 100+ | 29.28 грн |
| 250+ | 27.19 грн |
| 500+ | 23.01 грн |
| 1000+ | 17.49 грн |
| 2500+ | 15.95 грн |
| FL7930BMX |
|
Виробник: onsemi
Description: IC BALLAST CNTRL 350KHZ 8SOP
Packaging: Cut Tape (CT)
Package / Case: 8-SOIC (0.154", 3.90mm Width)
Mounting Type: Surface Mount
Frequency: 250kHz ~ 350kHz
Type: Ballast Controller
Operating Temperature: -40°C ~ 125°C
Voltage - Supply: 13V ~ 20V
Supplier Device Package: 8-SOIC
Dimming: No
Current - Supply: 2.5 mA
Description: IC BALLAST CNTRL 350KHZ 8SOP
Packaging: Cut Tape (CT)
Package / Case: 8-SOIC (0.154", 3.90mm Width)
Mounting Type: Surface Mount
Frequency: 250kHz ~ 350kHz
Type: Ballast Controller
Operating Temperature: -40°C ~ 125°C
Voltage - Supply: 13V ~ 20V
Supplier Device Package: 8-SOIC
Dimming: No
Current - Supply: 2.5 mA
товару немає в наявності
В кошику
од. на суму грн.
| FL7930CMX |
|
Виробник: onsemi
Description: IC BALLAST CNTRL 350KHZ 8SOP
Packaging: Cut Tape (CT)
Package / Case: 8-SOIC (0.154", 3.90mm Width)
Mounting Type: Surface Mount
Frequency: 250kHz ~ 350kHz
Type: Ballast Controller
Operating Temperature: -40°C ~ 125°C
Voltage - Supply: 13V ~ 20V
Supplier Device Package: 8-SOIC
Dimming: No
Part Status: Obsolete
Current - Supply: 2.5 mA
Description: IC BALLAST CNTRL 350KHZ 8SOP
Packaging: Cut Tape (CT)
Package / Case: 8-SOIC (0.154", 3.90mm Width)
Mounting Type: Surface Mount
Frequency: 250kHz ~ 350kHz
Type: Ballast Controller
Operating Temperature: -40°C ~ 125°C
Voltage - Supply: 13V ~ 20V
Supplier Device Package: 8-SOIC
Dimming: No
Part Status: Obsolete
Current - Supply: 2.5 mA
товару немає в наявності
В кошику
од. на суму грн.
| FDN86246 |
|
Виробник: onsemi
Description: MOSFET N-CH 150V 1.6A SUPERSOT3
Packaging: Cut Tape (CT)
Package / Case: TO-236-3, SC-59, SOT-23-3
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 1.6A (Ta)
Rds On (Max) @ Id, Vgs: 261mOhm @ 1.6A, 10V
Power Dissipation (Max): 1.5W (Ta)
Vgs(th) (Max) @ Id: 4V @ 250µA
Supplier Device Package: SOT-23-3
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 6V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 150 V
Gate Charge (Qg) (Max) @ Vgs: 5 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 225 pF @ 75 V
Description: MOSFET N-CH 150V 1.6A SUPERSOT3
Packaging: Cut Tape (CT)
Package / Case: TO-236-3, SC-59, SOT-23-3
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 1.6A (Ta)
Rds On (Max) @ Id, Vgs: 261mOhm @ 1.6A, 10V
Power Dissipation (Max): 1.5W (Ta)
Vgs(th) (Max) @ Id: 4V @ 250µA
Supplier Device Package: SOT-23-3
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 6V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 150 V
Gate Charge (Qg) (Max) @ Vgs: 5 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 225 pF @ 75 V
на замовлення 11729 шт:
термін постачання 21-31 дні (днів)| Кількість | Ціна |
|---|---|
| 3+ | 138.81 грн |
| 10+ | 85.04 грн |
| 100+ | 57.29 грн |
| 500+ | 42.59 грн |
| 1000+ | 39.42 грн |
| FDT86113LZ |
|
Виробник: onsemi
Description: MOSFET N-CH 100V 3.3A SOT223-4
Packaging: Cut Tape (CT)
Package / Case: TO-261-4, TO-261AA
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 3.3A (Tc)
Rds On (Max) @ Id, Vgs: 100mOhm @ 3.3A, 10V
Power Dissipation (Max): 2.2W (Ta)
Vgs(th) (Max) @ Id: 2.5V @ 250µA
Supplier Device Package: SOT-223-4
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 100 V
Gate Charge (Qg) (Max) @ Vgs: 6.8 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 315 pF @ 50 V
Description: MOSFET N-CH 100V 3.3A SOT223-4
Packaging: Cut Tape (CT)
Package / Case: TO-261-4, TO-261AA
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 3.3A (Tc)
Rds On (Max) @ Id, Vgs: 100mOhm @ 3.3A, 10V
Power Dissipation (Max): 2.2W (Ta)
Vgs(th) (Max) @ Id: 2.5V @ 250µA
Supplier Device Package: SOT-223-4
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 100 V
Gate Charge (Qg) (Max) @ Vgs: 6.8 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 315 pF @ 50 V
на замовлення 2763 шт:
термін постачання 21-31 дні (днів)| Кількість | Ціна |
|---|---|
| 4+ | 109.00 грн |
| 10+ | 66.01 грн |
| 100+ | 43.89 грн |
| 500+ | 32.28 грн |
| 1000+ | 29.41 грн |
| 2000+ | 28.07 грн |
| H11N2SR2M |
|
Виробник: onsemi
Description: OPTOISO 4.17KV OPN COLL 6SMD
Packaging: Cut Tape (CT)
Package / Case: 6-SMD, Gull Wing
Output Type: Open Collector
Mounting Type: Surface Mount
Operating Temperature: -40°C ~ 85°C
Voltage - Supply: 4V ~ 15V
Voltage - Forward (Vf) (Typ): 1.4V
Data Rate: 5MHz
Input Type: DC
Voltage - Isolation: 4170Vrms
Current - DC Forward (If) (Max): 30mA
Inputs - Side 1/Side 2: 1/0
Supplier Device Package: 6-SMD
Rise / Fall Time (Typ): 7.5ns, 12ns
Propagation Delay tpLH / tpHL (Max): 330ns, 330ns
Number of Channels: 1
Current - Output / Channel: 50 mA
Description: OPTOISO 4.17KV OPN COLL 6SMD
Packaging: Cut Tape (CT)
Package / Case: 6-SMD, Gull Wing
Output Type: Open Collector
Mounting Type: Surface Mount
Operating Temperature: -40°C ~ 85°C
Voltage - Supply: 4V ~ 15V
Voltage - Forward (Vf) (Typ): 1.4V
Data Rate: 5MHz
Input Type: DC
Voltage - Isolation: 4170Vrms
Current - DC Forward (If) (Max): 30mA
Inputs - Side 1/Side 2: 1/0
Supplier Device Package: 6-SMD
Rise / Fall Time (Typ): 7.5ns, 12ns
Propagation Delay tpLH / tpHL (Max): 330ns, 330ns
Number of Channels: 1
Current - Output / Channel: 50 mA
товару немає в наявності
В кошику
од. на суму грн.
| FDMC7678 |
|
Виробник: onsemi
Description: MOSFET N-CH 30V 17.5A/19.5A 8MLP
Packaging: Cut Tape (CT)
Package / Case: 8-PowerWDFN
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 17.5A (Ta), 19.5A (Tc)
Rds On (Max) @ Id, Vgs: 5.3mOhm @ 17.5A, 10V
Power Dissipation (Max): 2.3W (Ta), 31W (Tc)
Vgs(th) (Max) @ Id: 3V @ 250µA
Supplier Device Package: 8-MLP (3.3x3.3)
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 30 V
Gate Charge (Qg) (Max) @ Vgs: 39 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 2410 pF @ 15 V
Description: MOSFET N-CH 30V 17.5A/19.5A 8MLP
Packaging: Cut Tape (CT)
Package / Case: 8-PowerWDFN
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 17.5A (Ta), 19.5A (Tc)
Rds On (Max) @ Id, Vgs: 5.3mOhm @ 17.5A, 10V
Power Dissipation (Max): 2.3W (Ta), 31W (Tc)
Vgs(th) (Max) @ Id: 3V @ 250µA
Supplier Device Package: 8-MLP (3.3x3.3)
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 30 V
Gate Charge (Qg) (Max) @ Vgs: 39 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 2410 pF @ 15 V
товару немає в наявності
В кошику
од. на суму грн.
| FDMC8015L |
|
Виробник: onsemi
Description: MOSFET N-CH 40V 7A/18A 8MLP
Packaging: Cut Tape (CT)
Package / Case: 8-PowerWDFN
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 7A (Ta), 18A (Tc)
Rds On (Max) @ Id, Vgs: 26mOhm @ 7A, 10V
Power Dissipation (Max): 2.3W (Ta), 24W (Tc)
Vgs(th) (Max) @ Id: 3V @ 250µA
Supplier Device Package: 8-MLP (3.3x3.3)
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 40 V
Gate Charge (Qg) (Max) @ Vgs: 19 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 945 pF @ 20 V
Description: MOSFET N-CH 40V 7A/18A 8MLP
Packaging: Cut Tape (CT)
Package / Case: 8-PowerWDFN
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 7A (Ta), 18A (Tc)
Rds On (Max) @ Id, Vgs: 26mOhm @ 7A, 10V
Power Dissipation (Max): 2.3W (Ta), 24W (Tc)
Vgs(th) (Max) @ Id: 3V @ 250µA
Supplier Device Package: 8-MLP (3.3x3.3)
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 40 V
Gate Charge (Qg) (Max) @ Vgs: 19 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 945 pF @ 20 V
на замовлення 3765 шт:
термін постачання 21-31 дні (днів)| Кількість | Ціна |
|---|---|
| 5+ | 80.05 грн |
| 10+ | 63.14 грн |
| 100+ | 49.15 грн |
| 500+ | 39.09 грн |
| 1000+ | 31.84 грн |
| FPF1048BUCX |
|
Виробник: onsemi
Description: IC PWR SWITCH LOAD MGMT 6WLCSP
Features: Slew Rate Controlled
Packaging: Cut Tape (CT)
Package / Case: 6-UFBGA, WLCSP
Mounting Type: Surface Mount
Number of Outputs: 1
Interface: On/Off
Switch Type: General Purpose
Rds On (Typ): 21mOhm
Voltage - Load: 1.5V ~ 5.5V
Voltage - Supply (Vcc/Vdd): Not Required
Current - Output (Max): 3A
Supplier Device Package: 6-WLCSP (0.96x1.66)
Fault Protection: Reverse Current
Description: IC PWR SWITCH LOAD MGMT 6WLCSP
Features: Slew Rate Controlled
Packaging: Cut Tape (CT)
Package / Case: 6-UFBGA, WLCSP
Mounting Type: Surface Mount
Number of Outputs: 1
Interface: On/Off
Switch Type: General Purpose
Rds On (Typ): 21mOhm
Voltage - Load: 1.5V ~ 5.5V
Voltage - Supply (Vcc/Vdd): Not Required
Current - Output (Max): 3A
Supplier Device Package: 6-WLCSP (0.96x1.66)
Fault Protection: Reverse Current
на замовлення 28569 шт:
термін постачання 21-31 дні (днів)| Кількість | Ціна |
|---|---|
| 4+ | 91.97 грн |
| 10+ | 54.37 грн |
| 25+ | 45.23 грн |
| 100+ | 32.85 грн |
| 250+ | 28.12 грн |
| 500+ | 25.21 грн |
| 1000+ | 22.39 грн |
| FDME1023PZT |
|
Виробник: onsemi
Description: MOSFET 2P-CH 20V 2.6A 6MICROFET
Packaging: Cut Tape (CT)
Package / Case: 6-UFDFN Exposed Pad
Mounting Type: Surface Mount
Configuration: 2 P-Channel (Dual)
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
Power - Max: 600mW
Drain to Source Voltage (Vdss): 20V
Current - Continuous Drain (Id) @ 25°C: 2.6A
Input Capacitance (Ciss) (Max) @ Vds: 405pF @ 10V
Rds On (Max) @ Id, Vgs: 142mOhm @ 2.3A, 4.5V
Gate Charge (Qg) (Max) @ Vgs: 7.7nC @ 4.5V
FET Feature: Logic Level Gate
Vgs(th) (Max) @ Id: 1V @ 250µA
Supplier Device Package: 6-MicroFET (1.6x1.6)
Description: MOSFET 2P-CH 20V 2.6A 6MICROFET
Packaging: Cut Tape (CT)
Package / Case: 6-UFDFN Exposed Pad
Mounting Type: Surface Mount
Configuration: 2 P-Channel (Dual)
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
Power - Max: 600mW
Drain to Source Voltage (Vdss): 20V
Current - Continuous Drain (Id) @ 25°C: 2.6A
Input Capacitance (Ciss) (Max) @ Vds: 405pF @ 10V
Rds On (Max) @ Id, Vgs: 142mOhm @ 2.3A, 4.5V
Gate Charge (Qg) (Max) @ Vgs: 7.7nC @ 4.5V
FET Feature: Logic Level Gate
Vgs(th) (Max) @ Id: 1V @ 250µA
Supplier Device Package: 6-MicroFET (1.6x1.6)
на замовлення 358483 шт:
термін постачання 21-31 дні (днів)| Кількість | Ціна |
|---|---|
| 5+ | 72.39 грн |
| 10+ | 62.49 грн |
| 100+ | 48.70 грн |
| 500+ | 37.75 грн |
| 1000+ | 29.80 грн |
| 2000+ | 27.81 грн |
| FDME1024NZT |
|
Виробник: onsemi
Description: MOSFET 2N-CH 20V 3.8A 6MICROFET
Packaging: Cut Tape (CT)
Package / Case: 6-UFDFN Exposed Pad
Mounting Type: Surface Mount
Configuration: 2 N-Channel (Dual)
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
Power - Max: 600mW
Drain to Source Voltage (Vdss): 20V
Current - Continuous Drain (Id) @ 25°C: 3.8A
Input Capacitance (Ciss) (Max) @ Vds: 300pF @ 10V
Rds On (Max) @ Id, Vgs: 66mOhm @ 3.4A, 4.5V
Gate Charge (Qg) (Max) @ Vgs: 4.2nC @ 4.5V
FET Feature: Logic Level Gate
Vgs(th) (Max) @ Id: 1V @ 250µA
Supplier Device Package: 6-MicroFET (1.6x1.6)
Description: MOSFET 2N-CH 20V 3.8A 6MICROFET
Packaging: Cut Tape (CT)
Package / Case: 6-UFDFN Exposed Pad
Mounting Type: Surface Mount
Configuration: 2 N-Channel (Dual)
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
Power - Max: 600mW
Drain to Source Voltage (Vdss): 20V
Current - Continuous Drain (Id) @ 25°C: 3.8A
Input Capacitance (Ciss) (Max) @ Vds: 300pF @ 10V
Rds On (Max) @ Id, Vgs: 66mOhm @ 3.4A, 4.5V
Gate Charge (Qg) (Max) @ Vgs: 4.2nC @ 4.5V
FET Feature: Logic Level Gate
Vgs(th) (Max) @ Id: 1V @ 250µA
Supplier Device Package: 6-MicroFET (1.6x1.6)
на замовлення 5126 шт:
термін постачання 21-31 дні (днів)| Кількість | Ціна |
|---|---|
| 4+ | 112.41 грн |
| 10+ | 68.72 грн |
| 100+ | 45.60 грн |
| 500+ | 33.48 грн |
| 1000+ | 30.49 грн |
| 2000+ | 27.96 грн |
| FDC86244 |
|
Виробник: onsemi
Description: MOSFET N-CH 150V 2.3A SUPERSOT6
Packaging: Cut Tape (CT)
Package / Case: SOT-23-6 Thin, TSOT-23-6
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 2.3A (Ta)
Rds On (Max) @ Id, Vgs: 144mOhm @ 2.3A, 10V
Power Dissipation (Max): 1.6W (Ta)
Vgs(th) (Max) @ Id: 4V @ 250µA
Supplier Device Package: SuperSOT™-6
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 6V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 150 V
Gate Charge (Qg) (Max) @ Vgs: 6 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 345 pF @ 75 V
Description: MOSFET N-CH 150V 2.3A SUPERSOT6
Packaging: Cut Tape (CT)
Package / Case: SOT-23-6 Thin, TSOT-23-6
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 2.3A (Ta)
Rds On (Max) @ Id, Vgs: 144mOhm @ 2.3A, 10V
Power Dissipation (Max): 1.6W (Ta)
Vgs(th) (Max) @ Id: 4V @ 250µA
Supplier Device Package: SuperSOT™-6
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 6V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 150 V
Gate Charge (Qg) (Max) @ Vgs: 6 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 345 pF @ 75 V
на замовлення 4848 шт:
термін постачання 21-31 дні (днів)| Кількість | Ціна |
|---|---|
| 4+ | 100.49 грн |
| 10+ | 57.90 грн |
| 100+ | 39.13 грн |
| 500+ | 29.45 грн |
| 1000+ | 26.80 грн |
| FDZ661PZ |
|
Виробник: onsemi
Description: MOSFET P-CH 20V 2.6A 4WLCSP
Packaging: Cut Tape (CT)
Package / Case: 4-XFBGA, WLCSP
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: P-Channel
Current - Continuous Drain (Id) @ 25°C: 2.6A (Ta)
Rds On (Max) @ Id, Vgs: 140mOhm @ 2A, 4.5V
Power Dissipation (Max): 1.3W (Ta)
Vgs(th) (Max) @ Id: 1.2V @ 250µA
Supplier Device Package: 4-WLCSP (0.8x0.8)
Drive Voltage (Max Rds On, Min Rds On): 1.5V, 4.5V
Vgs (Max): ±8V
Drain to Source Voltage (Vdss): 20 V
Gate Charge (Qg) (Max) @ Vgs: 8.8 nC @ 4.5 V
Input Capacitance (Ciss) (Max) @ Vds: 555 pF @ 10 V
Description: MOSFET P-CH 20V 2.6A 4WLCSP
Packaging: Cut Tape (CT)
Package / Case: 4-XFBGA, WLCSP
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: P-Channel
Current - Continuous Drain (Id) @ 25°C: 2.6A (Ta)
Rds On (Max) @ Id, Vgs: 140mOhm @ 2A, 4.5V
Power Dissipation (Max): 1.3W (Ta)
Vgs(th) (Max) @ Id: 1.2V @ 250µA
Supplier Device Package: 4-WLCSP (0.8x0.8)
Drive Voltage (Max Rds On, Min Rds On): 1.5V, 4.5V
Vgs (Max): ±8V
Drain to Source Voltage (Vdss): 20 V
Gate Charge (Qg) (Max) @ Vgs: 8.8 nC @ 4.5 V
Input Capacitance (Ciss) (Max) @ Vds: 555 pF @ 10 V
на замовлення 7250 шт:
термін постачання 21-31 дні (днів)| Кількість | Ціна |
|---|---|
| 4+ | 97.08 грн |
| 10+ | 58.96 грн |
| 100+ | 38.82 грн |
| 500+ | 28.30 грн |
| 1000+ | 25.68 грн |
| 2000+ | 23.48 грн |
| FDS89161LZ |
|
Виробник: onsemi
Description: MOSFET 2N-CH 100V 2.7A 8SOIC
Packaging: Cut Tape (CT)
Package / Case: 8-SOIC (0.154", 3.90mm Width)
Mounting Type: Surface Mount
Configuration: 2 N-Channel (Dual)
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
Power - Max: 1.6W
Drain to Source Voltage (Vdss): 100V
Current - Continuous Drain (Id) @ 25°C: 2.7A
Input Capacitance (Ciss) (Max) @ Vds: 302pF @ 50V
Rds On (Max) @ Id, Vgs: 105mOhm @ 2.7A, 10V
Gate Charge (Qg) (Max) @ Vgs: 5.3nC @ 10V
Vgs(th) (Max) @ Id: 2.2V @ 250µA
Supplier Device Package: 8-SOIC
Part Status: Active
Description: MOSFET 2N-CH 100V 2.7A 8SOIC
Packaging: Cut Tape (CT)
Package / Case: 8-SOIC (0.154", 3.90mm Width)
Mounting Type: Surface Mount
Configuration: 2 N-Channel (Dual)
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
Power - Max: 1.6W
Drain to Source Voltage (Vdss): 100V
Current - Continuous Drain (Id) @ 25°C: 2.7A
Input Capacitance (Ciss) (Max) @ Vds: 302pF @ 50V
Rds On (Max) @ Id, Vgs: 105mOhm @ 2.7A, 10V
Gate Charge (Qg) (Max) @ Vgs: 5.3nC @ 10V
Vgs(th) (Max) @ Id: 2.2V @ 250µA
Supplier Device Package: 8-SOIC
Part Status: Active
на замовлення 7139 шт:
термін постачання 21-31 дні (днів)| Кількість | Ціна |
|---|---|
| 3+ | 154.14 грн |
| 10+ | 94.80 грн |
| 100+ | 64.13 грн |
| 500+ | 47.86 грн |
| 1000+ | 45.24 грн |
| FAN3278TMX |
|
Виробник: onsemi
Description: IC GATE DRVR HALF-BRIDGE 8SOIC
Packaging: Cut Tape (CT)
Package / Case: 8-SOIC (0.154", 3.90mm Width)
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Voltage - Supply: 8V ~ 27V
Input Type: Inverting, Non-Inverting
Supplier Device Package: 8-SOIC
Rise / Fall Time (Typ): 21ns, 8ns
Channel Type: Independent
Driven Configuration: Half-Bridge
Number of Drivers: 2
Gate Type: N-Channel, P-Channel MOSFET
Logic Voltage - VIL, VIH: 0.8V, 2.25V
Current - Peak Output (Source, Sink): 1A, 1.5A
Part Status: Active
DigiKey Programmable: Not Verified
Description: IC GATE DRVR HALF-BRIDGE 8SOIC
Packaging: Cut Tape (CT)
Package / Case: 8-SOIC (0.154", 3.90mm Width)
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Voltage - Supply: 8V ~ 27V
Input Type: Inverting, Non-Inverting
Supplier Device Package: 8-SOIC
Rise / Fall Time (Typ): 21ns, 8ns
Channel Type: Independent
Driven Configuration: Half-Bridge
Number of Drivers: 2
Gate Type: N-Channel, P-Channel MOSFET
Logic Voltage - VIL, VIH: 0.8V, 2.25V
Current - Peak Output (Source, Sink): 1A, 1.5A
Part Status: Active
DigiKey Programmable: Not Verified
на замовлення 28170 шт:
термін постачання 21-31 дні (днів)| Кількість | Ціна |
|---|---|
| 2+ | 179.69 грн |
| 10+ | 108.25 грн |
| 25+ | 91.26 грн |
| 100+ | 67.61 грн |
| 250+ | 58.75 грн |
| 500+ | 53.30 грн |
| 1000+ | 47.93 грн |
| FDMS4435BZ |
|
Виробник: onsemi
Description: MOSFET P-CH 30V 9A/18A 8PQFN
Packaging: Cut Tape (CT)
Package / Case: 8-PowerTDFN
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: P-Channel
Current - Continuous Drain (Id) @ 25°C: 9A (Ta), 18A (Tc)
Rds On (Max) @ Id, Vgs: 20mOhm @ 9A, 10V
Power Dissipation (Max): 2.5W (Ta), 39W (Tc)
Vgs(th) (Max) @ Id: 3V @ 250µA
Supplier Device Package: 8-PQFN (5x6)
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±25V
Drain to Source Voltage (Vdss): 30 V
Gate Charge (Qg) (Max) @ Vgs: 47 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 2050 pF @ 15 V
Description: MOSFET P-CH 30V 9A/18A 8PQFN
Packaging: Cut Tape (CT)
Package / Case: 8-PowerTDFN
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: P-Channel
Current - Continuous Drain (Id) @ 25°C: 9A (Ta), 18A (Tc)
Rds On (Max) @ Id, Vgs: 20mOhm @ 9A, 10V
Power Dissipation (Max): 2.5W (Ta), 39W (Tc)
Vgs(th) (Max) @ Id: 3V @ 250µA
Supplier Device Package: 8-PQFN (5x6)
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±25V
Drain to Source Voltage (Vdss): 30 V
Gate Charge (Qg) (Max) @ Vgs: 47 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 2050 pF @ 15 V
на замовлення 17626 шт:
термін постачання 21-31 дні (днів)| Кількість | Ціна |
|---|---|
| 3+ | 143.07 грн |
| 10+ | 91.35 грн |
| 100+ | 61.56 грн |
| 500+ | 45.78 грн |
| 1000+ | 41.92 грн |
| FDD18N20LZ |
|
Виробник: onsemi
Description: MOSFET N-CH 200V 16A DPAK
Packaging: Cut Tape (CT)
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 16A (Tc)
Rds On (Max) @ Id, Vgs: 125mOhm @ 8A, 10V
Power Dissipation (Max): 89W (Tc)
Vgs(th) (Max) @ Id: 2.5V @ 250µA
Supplier Device Package: TO-252AA
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 200 V
Gate Charge (Qg) (Max) @ Vgs: 40 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 1575 pF @ 25 V
Description: MOSFET N-CH 200V 16A DPAK
Packaging: Cut Tape (CT)
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 16A (Tc)
Rds On (Max) @ Id, Vgs: 125mOhm @ 8A, 10V
Power Dissipation (Max): 89W (Tc)
Vgs(th) (Max) @ Id: 2.5V @ 250µA
Supplier Device Package: TO-252AA
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 200 V
Gate Charge (Qg) (Max) @ Vgs: 40 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 1575 pF @ 25 V
на замовлення 8331 шт:
термін постачання 21-31 дні (днів)| Кількість | Ціна |
|---|---|
| 2+ | 190.76 грн |
| 10+ | 118.33 грн |
| 100+ | 81.10 грн |
| 500+ | 61.15 грн |
| 1000+ | 61.02 грн |
| FXMAR2102L8X |
|
Виробник: onsemi
Description: IC XLTR VL BIDIR 8-MICROPAK
Features: Auto-Direction Sensing
Packaging: Cut Tape (CT)
Package / Case: 8-UFQFN
Output Type: Open Drain, Tri-State
Mounting Type: Surface Mount
Operating Temperature: -40°C ~ 85°C (TA)
Data Rate: 50MHz
Supplier Device Package: 8-MicroPak™
Channel Type: Bidirectional
Translator Type: Voltage Level
Channels per Circuit: 2
Voltage - VCCA: 1.65 V ~ 5.5 V
Voltage - VCCB: 1.65 V ~ 5.5 V
Number of Circuits: 1
Description: IC XLTR VL BIDIR 8-MICROPAK
Features: Auto-Direction Sensing
Packaging: Cut Tape (CT)
Package / Case: 8-UFQFN
Output Type: Open Drain, Tri-State
Mounting Type: Surface Mount
Operating Temperature: -40°C ~ 85°C (TA)
Data Rate: 50MHz
Supplier Device Package: 8-MicroPak™
Channel Type: Bidirectional
Translator Type: Voltage Level
Channels per Circuit: 2
Voltage - VCCA: 1.65 V ~ 5.5 V
Voltage - VCCB: 1.65 V ~ 5.5 V
Number of Circuits: 1
на замовлення 28726 шт:
термін постачання 21-31 дні (днів)| Кількість | Ціна |
|---|---|
| 12+ | 30.66 грн |
| 16+ | 20.99 грн |
| 25+ | 18.70 грн |
| 100+ | 15.19 грн |
| 250+ | 14.07 грн |
| 500+ | 13.40 грн |
| 1000+ | 12.64 грн |
| FXMAR2102UMX |
|
Виробник: onsemi
Description: IC TRANSLTR BIDIRECTIONAL 8UMLP
Features: Auto-Direction Sensing
Packaging: Cut Tape (CT)
Package / Case: 8-UFQFN
Output Type: Open Drain, Tri-State
Mounting Type: Surface Mount
Operating Temperature: -40°C ~ 85°C (TA)
Data Rate: 50MHz
Supplier Device Package: 8-UMLP (1.2x1.4)
Channel Type: Bidirectional
Translator Type: Voltage Level
Channels per Circuit: 2
Voltage - VCCA: 1.65 V ~ 5.5 V
Voltage - VCCB: 1.65 V ~ 5.5 V
Part Status: Active
Number of Circuits: 1
Description: IC TRANSLTR BIDIRECTIONAL 8UMLP
Features: Auto-Direction Sensing
Packaging: Cut Tape (CT)
Package / Case: 8-UFQFN
Output Type: Open Drain, Tri-State
Mounting Type: Surface Mount
Operating Temperature: -40°C ~ 85°C (TA)
Data Rate: 50MHz
Supplier Device Package: 8-UMLP (1.2x1.4)
Channel Type: Bidirectional
Translator Type: Voltage Level
Channels per Circuit: 2
Voltage - VCCA: 1.65 V ~ 5.5 V
Voltage - VCCB: 1.65 V ~ 5.5 V
Part Status: Active
Number of Circuits: 1
на замовлення 16841 шт:
термін постачання 21-31 дні (днів)| Кількість | Ціна |
|---|---|
| 12+ | 29.81 грн |
| 17+ | 20.01 грн |
| 25+ | 17.84 грн |
| 100+ | 14.49 грн |
| 250+ | 13.41 грн |
| 500+ | 12.76 грн |
| 1000+ | 12.03 грн |
| 2500+ | 12.01 грн |
| FDD390N15ALZ |
|
Виробник: onsemi
Description: MOSFET N-CH 150V 26A DPAK
Packaging: Cut Tape (CT)
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 26A (Tc)
Rds On (Max) @ Id, Vgs: 42mOhm @ 26A, 10V
Power Dissipation (Max): 63W (Tc)
Vgs(th) (Max) @ Id: 2.8V @ 250µA
Supplier Device Package: TO-252AA
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 150 V
Gate Charge (Qg) (Max) @ Vgs: 39 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 1760 pF @ 75 V
Description: MOSFET N-CH 150V 26A DPAK
Packaging: Cut Tape (CT)
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 26A (Tc)
Rds On (Max) @ Id, Vgs: 42mOhm @ 26A, 10V
Power Dissipation (Max): 63W (Tc)
Vgs(th) (Max) @ Id: 2.8V @ 250µA
Supplier Device Package: TO-252AA
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 150 V
Gate Charge (Qg) (Max) @ Vgs: 39 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 1760 pF @ 75 V
на замовлення 3828 шт:
термін постачання 21-31 дні (днів)| Кількість | Ціна |
|---|---|
| 4+ | 110.71 грн |
| 10+ | 82.66 грн |
| 100+ | 60.82 грн |
| 500+ | 46.58 грн |
| 1000+ | 44.07 грн |
| FAN4146ESX |
|
Виробник: onsemi
Description: IC CTLR LOW PWR AC GFI 6-SSOT
Packaging: Cut Tape (CT)
Package / Case: SOT-23-6 Thin, TSOT-23-6
Mounting Type: Surface Mount
Operating Temperature: -25°C ~ 80°C
Applications: Ground Fault Protection
Current - Supply: 400µA
Supplier Device Package: SuperSOT™-6
Description: IC CTLR LOW PWR AC GFI 6-SSOT
Packaging: Cut Tape (CT)
Package / Case: SOT-23-6 Thin, TSOT-23-6
Mounting Type: Surface Mount
Operating Temperature: -25°C ~ 80°C
Applications: Ground Fault Protection
Current - Supply: 400µA
Supplier Device Package: SuperSOT™-6
на замовлення 3190 шт:
термін постачання 21-31 дні (днів)| Кількість | Ціна |
|---|---|
| 6+ | 67.28 грн |
| 10+ | 56.91 грн |
| 25+ | 53.47 грн |
| 100+ | 38.04 грн |
| 250+ | 32.37 грн |
| 500+ | 30.75 грн |
| 1000+ | 23.08 грн |
| FAN4147SX |
|
Виробник: onsemi
Description: IC CTLR LOW PWR AC GFI 6-SSOT
Packaging: Cut Tape (CT)
Package / Case: SOT-23-6 Thin, TSOT-23-6
Mounting Type: Surface Mount
Operating Temperature: -35°C ~ 85°C
Applications: Ground Fault Protection
Current - Supply: 400µA
Supplier Device Package: SuperSOT™-6
Description: IC CTLR LOW PWR AC GFI 6-SSOT
Packaging: Cut Tape (CT)
Package / Case: SOT-23-6 Thin, TSOT-23-6
Mounting Type: Surface Mount
Operating Temperature: -35°C ~ 85°C
Applications: Ground Fault Protection
Current - Supply: 400µA
Supplier Device Package: SuperSOT™-6
на замовлення 1 шт:
термін постачання 21-31 дні (днів)В кошику од. на суму грн.
| FDD5N50NZTM |
|
Виробник: onsemi
Description: MOSFET N-CH 500V 4A DPAK
Packaging: Cut Tape (CT)
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 4A (Tc)
Rds On (Max) @ Id, Vgs: 1.5Ohm @ 2A, 10V
Power Dissipation (Max): 62W (Tc)
Vgs(th) (Max) @ Id: 5V @ 250µA
Supplier Device Package: TO-252AA
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±25V
Drain to Source Voltage (Vdss): 500 V
Gate Charge (Qg) (Max) @ Vgs: 12 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 440 pF @ 25 V
Description: MOSFET N-CH 500V 4A DPAK
Packaging: Cut Tape (CT)
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 4A (Tc)
Rds On (Max) @ Id, Vgs: 1.5Ohm @ 2A, 10V
Power Dissipation (Max): 62W (Tc)
Vgs(th) (Max) @ Id: 5V @ 250µA
Supplier Device Package: TO-252AA
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±25V
Drain to Source Voltage (Vdss): 500 V
Gate Charge (Qg) (Max) @ Vgs: 12 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 440 pF @ 25 V
на замовлення 1968 шт:
термін постачання 21-31 дні (днів)| Кількість | Ціна |
|---|---|
| 3+ | 114.97 грн |
| 10+ | 69.87 грн |
| 100+ | 46.61 грн |
| 500+ | 34.36 грн |
| 1000+ | 31.34 грн |
| FAN6982MY |
|
Виробник: onsemi
Description: IC PFC CTRLR CCM 75KHZ 14SOIC
Packaging: Cut Tape (CT)
Package / Case: 14-SOIC (0.154", 3.90mm Width)
Mounting Type: Surface Mount
Operating Temperature: -40°C ~ 105°C
Voltage - Supply: 11V ~ 22V
Frequency - Switching: 50kHz ~ 75kHz
Mode: Continuous Conduction (CCM)
Supplier Device Package: 14-SOIC
Part Status: Obsolete
Current - Startup: 30 µA
Description: IC PFC CTRLR CCM 75KHZ 14SOIC
Packaging: Cut Tape (CT)
Package / Case: 14-SOIC (0.154", 3.90mm Width)
Mounting Type: Surface Mount
Operating Temperature: -40°C ~ 105°C
Voltage - Supply: 11V ~ 22V
Frequency - Switching: 50kHz ~ 75kHz
Mode: Continuous Conduction (CCM)
Supplier Device Package: 14-SOIC
Part Status: Obsolete
Current - Startup: 30 µA
товару немає в наявності
В кошику
од. на суму грн.
| FAN7389MX1 |
|
Виробник: onsemi
Description: IC GATE DRVR HALF-BRIDGE 28SOIC
Packaging: Cut Tape (CT)
Package / Case: 28-SOIC (0.295", 7.50mm Width)
Mounting Type: Surface Mount
Operating Temperature: -40°C ~ 150°C (TJ)
Voltage - Supply: 10V ~ 20V
Input Type: Non-Inverting
High Side Voltage - Max (Bootstrap): 600 V
Supplier Device Package: 28-SOIC
Rise / Fall Time (Typ): 50ns, 30ns
Channel Type: 3-Phase
Driven Configuration: Half-Bridge
Number of Drivers: 6
Gate Type: IGBT, MOSFET (N-Channel)
Logic Voltage - VIL, VIH: 0.8V, 2.5V
Current - Peak Output (Source, Sink): 350mA, 650mA
Part Status: Not For New Designs
DigiKey Programmable: Not Verified
Description: IC GATE DRVR HALF-BRIDGE 28SOIC
Packaging: Cut Tape (CT)
Package / Case: 28-SOIC (0.295", 7.50mm Width)
Mounting Type: Surface Mount
Operating Temperature: -40°C ~ 150°C (TJ)
Voltage - Supply: 10V ~ 20V
Input Type: Non-Inverting
High Side Voltage - Max (Bootstrap): 600 V
Supplier Device Package: 28-SOIC
Rise / Fall Time (Typ): 50ns, 30ns
Channel Type: 3-Phase
Driven Configuration: Half-Bridge
Number of Drivers: 6
Gate Type: IGBT, MOSFET (N-Channel)
Logic Voltage - VIL, VIH: 0.8V, 2.5V
Current - Peak Output (Source, Sink): 350mA, 650mA
Part Status: Not For New Designs
DigiKey Programmable: Not Verified
на замовлення 968 шт:
термін постачання 21-31 дні (днів)| Кількість | Ціна |
|---|---|
| 2+ | 337.23 грн |
| 10+ | 210.18 грн |
| 25+ | 180.38 грн |
| 100+ | 137.60 грн |
| 250+ | 122.06 грн |
| 500+ | 112.49 грн |
| FSA2466UMX |
|
Виробник: onsemi
Description: IC SWITCH DPDT X 2 1.6OHM 16UMLP
Packaging: Cut Tape (CT)
Package / Case: 16-UFQFN
Mounting Type: Surface Mount
Operating Temperature: -40°C ~ 85°C (TA)
On-State Resistance (Max): 1.6Ohm (Typ)
-3db Bandwidth: 240MHz
Supplier Device Package: 16-UMLP (1.8x2.6)
Voltage - Supply, Single (V+): 1.65V ~ 4.45V
Charge Injection: 8pC
Crosstalk: -90dB @ 100kHz
Switch Circuit: DPDT
Multiplexer/Demultiplexer Circuit: 2:2
Channel-to-Channel Matching (ΔRon): 40mOhm
Switch Time (Ton, Toff) (Max): 50ns, 32ns
Channel Capacitance (CS(off), CD(off)): 6pF
Current - Leakage (IS(off)) (Max): 10nA
Part Status: Last Time Buy
Number of Circuits: 2
Description: IC SWITCH DPDT X 2 1.6OHM 16UMLP
Packaging: Cut Tape (CT)
Package / Case: 16-UFQFN
Mounting Type: Surface Mount
Operating Temperature: -40°C ~ 85°C (TA)
On-State Resistance (Max): 1.6Ohm (Typ)
-3db Bandwidth: 240MHz
Supplier Device Package: 16-UMLP (1.8x2.6)
Voltage - Supply, Single (V+): 1.65V ~ 4.45V
Charge Injection: 8pC
Crosstalk: -90dB @ 100kHz
Switch Circuit: DPDT
Multiplexer/Demultiplexer Circuit: 2:2
Channel-to-Channel Matching (ΔRon): 40mOhm
Switch Time (Ton, Toff) (Max): 50ns, 32ns
Channel Capacitance (CS(off), CD(off)): 6pF
Current - Leakage (IS(off)) (Max): 10nA
Part Status: Last Time Buy
Number of Circuits: 2
на замовлення 25881 шт:
термін постачання 21-31 дні (днів)| Кількість | Ціна |
|---|---|
| 8+ | 42.58 грн |
| 12+ | 28.95 грн |
| 25+ | 25.98 грн |
| 100+ | 21.24 грн |
| 250+ | 19.75 грн |
| 500+ | 18.85 грн |
| 1000+ | 17.81 грн |
| 2500+ | 17.04 грн |
| FDMS7620S |
|
Виробник: onsemi
Description: MOSFET 2N-CH 30V 10.1A POWER56
Packaging: Cut Tape (CT)
Package / Case: 8-PowerWDFN
Mounting Type: Surface Mount
Configuration: 2 N-Channel (Dual)
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
Power - Max: 1W
Drain to Source Voltage (Vdss): 30V
Current - Continuous Drain (Id) @ 25°C: 10.1A, 12.4A
Input Capacitance (Ciss) (Max) @ Vds: 608pF @ 15V
Rds On (Max) @ Id, Vgs: 20mOhm @ 10.1A, 10V
Gate Charge (Qg) (Max) @ Vgs: 11nC @ 10V
FET Feature: Logic Level Gate
Vgs(th) (Max) @ Id: 3V @ 250µA
Supplier Device Package: Power56
Part Status: Active
Description: MOSFET 2N-CH 30V 10.1A POWER56
Packaging: Cut Tape (CT)
Package / Case: 8-PowerWDFN
Mounting Type: Surface Mount
Configuration: 2 N-Channel (Dual)
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
Power - Max: 1W
Drain to Source Voltage (Vdss): 30V
Current - Continuous Drain (Id) @ 25°C: 10.1A, 12.4A
Input Capacitance (Ciss) (Max) @ Vds: 608pF @ 15V
Rds On (Max) @ Id, Vgs: 20mOhm @ 10.1A, 10V
Gate Charge (Qg) (Max) @ Vgs: 11nC @ 10V
FET Feature: Logic Level Gate
Vgs(th) (Max) @ Id: 3V @ 250µA
Supplier Device Package: Power56
Part Status: Active
на замовлення 27000 шт:
термін постачання 21-31 дні (днів)| Кількість | Ціна |
|---|---|
| 4+ | 113.26 грн |
| 10+ | 89.22 грн |
| 100+ | 69.40 грн |
| 500+ | 55.21 грн |
| 1000+ | 44.97 грн |
| FDMC86244 |
|
Виробник: onsemi
Description: MOSFET N-CH 150V 2.8A/9.4A 8MLP
Packaging: Cut Tape (CT)
Package / Case: 8-PowerWDFN
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 2.8A (Ta), 9.4A (Tc)
Rds On (Max) @ Id, Vgs: 134mOhm @ 2.8A, 10V
Power Dissipation (Max): 2.3W (Ta), 26W (Tc)
Vgs(th) (Max) @ Id: 4V @ 250µA
Supplier Device Package: 8-MLP (3.3x3.3)
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 6V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 150 V
Gate Charge (Qg) (Max) @ Vgs: 5.9 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 345 pF @ 75 V
Description: MOSFET N-CH 150V 2.8A/9.4A 8MLP
Packaging: Cut Tape (CT)
Package / Case: 8-PowerWDFN
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 2.8A (Ta), 9.4A (Tc)
Rds On (Max) @ Id, Vgs: 134mOhm @ 2.8A, 10V
Power Dissipation (Max): 2.3W (Ta), 26W (Tc)
Vgs(th) (Max) @ Id: 4V @ 250µA
Supplier Device Package: 8-MLP (3.3x3.3)
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 6V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 150 V
Gate Charge (Qg) (Max) @ Vgs: 5.9 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 345 pF @ 75 V
на замовлення 6873 шт:
термін постачання 21-31 дні (днів)| Кількість | Ціна |
|---|---|
| 3+ | 132.85 грн |
| 10+ | 81.68 грн |
| 100+ | 54.89 грн |
| 500+ | 40.73 грн |
| 1000+ | 37.32 грн |
| FDS89141 |
|
Виробник: onsemi
Description: MOSFET 2N-CH 100V 3.5A 8SOIC
Packaging: Cut Tape (CT)
Package / Case: 8-SOIC (0.154", 3.90mm Width)
Mounting Type: Surface Mount
Configuration: 2 N-Channel (Dual)
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
Power - Max: 1.6W
Drain to Source Voltage (Vdss): 100V
Current - Continuous Drain (Id) @ 25°C: 3.5A
Input Capacitance (Ciss) (Max) @ Vds: 398pF @ 50V
Rds On (Max) @ Id, Vgs: 62mOhm @ 3.5A, 10V
Gate Charge (Qg) (Max) @ Vgs: 7.1nC @ 10V
FET Feature: Logic Level Gate
Vgs(th) (Max) @ Id: 4V @ 250µA
Supplier Device Package: 8-SOIC
Part Status: Active
Description: MOSFET 2N-CH 100V 3.5A 8SOIC
Packaging: Cut Tape (CT)
Package / Case: 8-SOIC (0.154", 3.90mm Width)
Mounting Type: Surface Mount
Configuration: 2 N-Channel (Dual)
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
Power - Max: 1.6W
Drain to Source Voltage (Vdss): 100V
Current - Continuous Drain (Id) @ 25°C: 3.5A
Input Capacitance (Ciss) (Max) @ Vds: 398pF @ 50V
Rds On (Max) @ Id, Vgs: 62mOhm @ 3.5A, 10V
Gate Charge (Qg) (Max) @ Vgs: 7.1nC @ 10V
FET Feature: Logic Level Gate
Vgs(th) (Max) @ Id: 4V @ 250µA
Supplier Device Package: 8-SOIC
Part Status: Active
на замовлення 40293 шт:
термін постачання 21-31 дні (днів)| Кількість | Ціна |
|---|---|
| 2+ | 235.89 грн |
| 10+ | 166.23 грн |
| 100+ | 117.67 грн |
| 500+ | 98.55 грн |
| FQS4903TF |
|
Виробник: onsemi
Description: MOSFET 2N-CH 500V 0.37A 8SOP
Packaging: Cut Tape (CT)
Package / Case: 8-SOIC (0.154", 3.90mm Width)
Mounting Type: Surface Mount
Configuration: 2 N-Channel (Dual)
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
Power - Max: 2W
Drain to Source Voltage (Vdss): 500V
Current - Continuous Drain (Id) @ 25°C: 370mA
Input Capacitance (Ciss) (Max) @ Vds: 200pF @ 25V
Rds On (Max) @ Id, Vgs: 6.2Ohm @ 185mA, 10V
Gate Charge (Qg) (Max) @ Vgs: 8.2nC @ 10V
Vgs(th) (Max) @ Id: 4V @ 250µA
Supplier Device Package: 8-SOIC
Description: MOSFET 2N-CH 500V 0.37A 8SOP
Packaging: Cut Tape (CT)
Package / Case: 8-SOIC (0.154", 3.90mm Width)
Mounting Type: Surface Mount
Configuration: 2 N-Channel (Dual)
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
Power - Max: 2W
Drain to Source Voltage (Vdss): 500V
Current - Continuous Drain (Id) @ 25°C: 370mA
Input Capacitance (Ciss) (Max) @ Vds: 200pF @ 25V
Rds On (Max) @ Id, Vgs: 6.2Ohm @ 185mA, 10V
Gate Charge (Qg) (Max) @ Vgs: 8.2nC @ 10V
Vgs(th) (Max) @ Id: 4V @ 250µA
Supplier Device Package: 8-SOIC
на замовлення 113 шт:
термін постачання 21-31 дні (днів)| Кількість | Ціна |
|---|---|
| 3+ | 140.51 грн |
| 10+ | 121.86 грн |
| 100+ | 97.96 грн |
| FDMS8020 |
|
Виробник: onsemi
Description: MOSFET N-CH 30V 26A/42A 8PQFN
Packaging: Cut Tape (CT)
Package / Case: 8-PowerTDFN
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 26A (Ta), 42A (Tc)
Rds On (Max) @ Id, Vgs: 2.5mOhm @ 26A, 10V
Power Dissipation (Max): 2.5W (Ta), 65W (Tc)
Vgs(th) (Max) @ Id: 3V @ 250µA
Supplier Device Package: 8-PQFN (5x6)
Part Status: Obsolete
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 30 V
Gate Charge (Qg) (Max) @ Vgs: 61 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 3800 pF @ 15 V
Description: MOSFET N-CH 30V 26A/42A 8PQFN
Packaging: Cut Tape (CT)
Package / Case: 8-PowerTDFN
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 26A (Ta), 42A (Tc)
Rds On (Max) @ Id, Vgs: 2.5mOhm @ 26A, 10V
Power Dissipation (Max): 2.5W (Ta), 65W (Tc)
Vgs(th) (Max) @ Id: 3V @ 250µA
Supplier Device Package: 8-PQFN (5x6)
Part Status: Obsolete
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 30 V
Gate Charge (Qg) (Max) @ Vgs: 61 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 3800 pF @ 15 V
на замовлення 3000 шт:
термін постачання 21-31 дні (днів)| Кількість | Ціна |
|---|---|
| 3+ | 143.92 грн |
| 10+ | 88.32 грн |
| 100+ | 59.54 грн |
| 500+ | 44.31 грн |
| 1000+ | 40.59 грн |
| FDT86244 |
|
Виробник: onsemi
Description: MOSFET N-CH 150V 2.8A SOT223-4
Packaging: Cut Tape (CT)
Package / Case: TO-261-4, TO-261AA
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 2.8A (Tc)
Rds On (Max) @ Id, Vgs: 128mOhm @ 2.8A, 10V
Power Dissipation (Max): 2.2W (Ta)
Vgs(th) (Max) @ Id: 4V @ 250µA
Supplier Device Package: SOT-223-4
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 6V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 150 V
Gate Charge (Qg) (Max) @ Vgs: 7 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 395 pF @ 75 V
Description: MOSFET N-CH 150V 2.8A SOT223-4
Packaging: Cut Tape (CT)
Package / Case: TO-261-4, TO-261AA
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 2.8A (Tc)
Rds On (Max) @ Id, Vgs: 128mOhm @ 2.8A, 10V
Power Dissipation (Max): 2.2W (Ta)
Vgs(th) (Max) @ Id: 4V @ 250µA
Supplier Device Package: SOT-223-4
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 6V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 150 V
Gate Charge (Qg) (Max) @ Vgs: 7 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 395 pF @ 75 V
на замовлення 5488 шт:
термін постачання 21-31 дні (днів)| Кількість | Ціна |
|---|---|
| 5+ | 80.90 грн |
| 10+ | 53.06 грн |
| 100+ | 39.49 грн |
| 500+ | 30.64 грн |
| 1000+ | 26.94 грн |
| 2000+ | 26.21 грн |
| FDT86246 |
|
Виробник: onsemi
Description: MOSFET N-CH 150V 2A SOT223-4
Packaging: Cut Tape (CT)
Package / Case: TO-261-4, TO-261AA
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 2A (Ta)
Rds On (Max) @ Id, Vgs: 236mOhm @ 2A, 10V
Power Dissipation (Max): 2.2W (Ta)
Vgs(th) (Max) @ Id: 4V @ 250µA
Supplier Device Package: SOT-223-4
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 6V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 150 V
Gate Charge (Qg) (Max) @ Vgs: 4 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 215 pF @ 75 V
Description: MOSFET N-CH 150V 2A SOT223-4
Packaging: Cut Tape (CT)
Package / Case: TO-261-4, TO-261AA
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 2A (Ta)
Rds On (Max) @ Id, Vgs: 236mOhm @ 2A, 10V
Power Dissipation (Max): 2.2W (Ta)
Vgs(th) (Max) @ Id: 4V @ 250µA
Supplier Device Package: SOT-223-4
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 6V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 150 V
Gate Charge (Qg) (Max) @ Vgs: 4 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 215 pF @ 75 V
на замовлення 5672 шт:
термін постачання 21-31 дні (днів)| Кількість | Ціна |
|---|---|
| 4+ | 86.86 грн |
| 10+ | 71.92 грн |
| 100+ | 50.38 грн |
| 500+ | 40.55 грн |
| 1000+ | 37.36 грн |
| EGP10G |
|
Виробник: onsemi
Description: DIODE STANDARD 400V 1A DO41
Packaging: Cut Tape (CT)
Package / Case: DO-204AL, DO-41, Axial
Mounting Type: Through Hole
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 50 ns
Technology: Standard
Current - Average Rectified (Io): 1A
Supplier Device Package: DO-41
Operating Temperature - Junction: -65°C ~ 150°C
Part Status: Active
Voltage - DC Reverse (Vr) (Max): 400 V
Voltage - Forward (Vf) (Max) @ If: 1.25 V @ 1 A
Current - Reverse Leakage @ Vr: 5 µA @ 400 V
Description: DIODE STANDARD 400V 1A DO41
Packaging: Cut Tape (CT)
Package / Case: DO-204AL, DO-41, Axial
Mounting Type: Through Hole
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 50 ns
Technology: Standard
Current - Average Rectified (Io): 1A
Supplier Device Package: DO-41
Operating Temperature - Junction: -65°C ~ 150°C
Part Status: Active
Voltage - DC Reverse (Vr) (Max): 400 V
Voltage - Forward (Vf) (Max) @ If: 1.25 V @ 1 A
Current - Reverse Leakage @ Vr: 5 µA @ 400 V
на замовлення 4032 шт:
термін постачання 21-31 дні (днів)| Кількість | Ціна |
|---|---|
| 10+ | 34.92 грн |
| 14+ | 23.70 грн |
| 100+ | 18.75 грн |
| 500+ | 13.35 грн |
| 1000+ | 11.46 грн |
| 2000+ | 10.82 грн |
| FDMS7660AS |
|
Виробник: onsemi
Description: MOSFET N-CH 30V 26A/42A 8PQFN
Packaging: Cut Tape (CT)
Package / Case: 8-PowerTDFN
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 26A (Ta), 42A (Tc)
Rds On (Max) @ Id, Vgs: 2.4mOhm @ 25A, 10V
Power Dissipation (Max): 2.5W (Ta), 83W (Tc)
Vgs(th) (Max) @ Id: 3V @ 1mA
Supplier Device Package: 8-PQFN (5x6)
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 30 V
Gate Charge (Qg) (Max) @ Vgs: 90 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 6120 pF @ 15 V
Description: MOSFET N-CH 30V 26A/42A 8PQFN
Packaging: Cut Tape (CT)
Package / Case: 8-PowerTDFN
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 26A (Ta), 42A (Tc)
Rds On (Max) @ Id, Vgs: 2.4mOhm @ 25A, 10V
Power Dissipation (Max): 2.5W (Ta), 83W (Tc)
Vgs(th) (Max) @ Id: 3V @ 1mA
Supplier Device Package: 8-PQFN (5x6)
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 30 V
Gate Charge (Qg) (Max) @ Vgs: 90 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 6120 pF @ 15 V
на замовлення 7172 шт:
термін постачання 21-31 дні (днів)| Кількість | Ціна |
|---|---|
| 3+ | 126.89 грн |
| 10+ | 101.52 грн |
| 100+ | 80.78 грн |
| 500+ | 64.15 грн |
| 1000+ | 54.43 грн |
| FSUSB74MPX |
|
Виробник: onsemi
Description: IC USB MUX/SWITCH 16MLP
Features: Break-Before-Make, USB 2.0
Packaging: Cut Tape (CT)
Package / Case: 16-WFQFN Exposed Pad
Mounting Type: Surface Mount
Operating Temperature: -40°C ~ 85°C (TA)
Applications: USB
On-State Resistance (Max): 9Ohm
Supplier Device Package: 16-MLP (3x3)
Voltage - Supply, Single (V+): 2.5V ~ 4.4V
Multiplexer/Demultiplexer Circuit: 4:1
Part Status: Active
Number of Channels: 1
Description: IC USB MUX/SWITCH 16MLP
Features: Break-Before-Make, USB 2.0
Packaging: Cut Tape (CT)
Package / Case: 16-WFQFN Exposed Pad
Mounting Type: Surface Mount
Operating Temperature: -40°C ~ 85°C (TA)
Applications: USB
On-State Resistance (Max): 9Ohm
Supplier Device Package: 16-MLP (3x3)
Voltage - Supply, Single (V+): 2.5V ~ 4.4V
Multiplexer/Demultiplexer Circuit: 4:1
Part Status: Active
Number of Channels: 1
на замовлення 18313 шт:
термін постачання 21-31 дні (днів)| Кількість | Ціна |
|---|---|
| 4+ | 101.34 грн |
| 10+ | 71.18 грн |
| 25+ | 64.55 грн |
| 100+ | 53.69 грн |
| 250+ | 50.41 грн |
| 500+ | 49.22 грн |
| FL6300AMY |
|
Виробник: onsemi
Description: IC LED DRIVER CTRLR PWM 8SOIC
Packaging: Cut Tape (CT)
Package / Case: 8-SOIC (0.154", 3.90mm Width)
Mounting Type: Surface Mount
Number of Outputs: 1
Type: DC DC Controller
Operating Temperature: -40°C ~ 125°C (TA)
Applications: Lighting
Internal Switch(s): No
Topology: Flyback
Supplier Device Package: 8-SOIC
Dimming: PWM
Voltage - Supply (Min): 10V
Voltage - Supply (Max): 25V
Part Status: Obsolete
Description: IC LED DRIVER CTRLR PWM 8SOIC
Packaging: Cut Tape (CT)
Package / Case: 8-SOIC (0.154", 3.90mm Width)
Mounting Type: Surface Mount
Number of Outputs: 1
Type: DC DC Controller
Operating Temperature: -40°C ~ 125°C (TA)
Applications: Lighting
Internal Switch(s): No
Topology: Flyback
Supplier Device Package: 8-SOIC
Dimming: PWM
Voltage - Supply (Min): 10V
Voltage - Supply (Max): 25V
Part Status: Obsolete
товару немає в наявності
В кошику
од. на суму грн.
| FDMS86105 |
|
Виробник: onsemi
Description: MOSFET N-CH 100V 6A/26A 8PQFN
Packaging: Cut Tape (CT)
Package / Case: 8-PowerTDFN
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 6A (Ta), 26A (Tc)
Rds On (Max) @ Id, Vgs: 34mOhm @ 6A, 10V
Power Dissipation (Max): 2.5W (Ta), 48W (Tc)
Vgs(th) (Max) @ Id: 4V @ 250µA
Supplier Device Package: 8-PQFN (5x6)
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 6V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 100 V
Gate Charge (Qg) (Max) @ Vgs: 11 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 645 pF @ 50 V
Description: MOSFET N-CH 100V 6A/26A 8PQFN
Packaging: Cut Tape (CT)
Package / Case: 8-PowerTDFN
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 6A (Ta), 26A (Tc)
Rds On (Max) @ Id, Vgs: 34mOhm @ 6A, 10V
Power Dissipation (Max): 2.5W (Ta), 48W (Tc)
Vgs(th) (Max) @ Id: 4V @ 250µA
Supplier Device Package: 8-PQFN (5x6)
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 6V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 100 V
Gate Charge (Qg) (Max) @ Vgs: 11 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 645 pF @ 50 V
на замовлення 9895 шт:
термін постачання 21-31 дні (днів)| Кількість | Ціна |
|---|---|
| 2+ | 195.02 грн |
| 10+ | 121.12 грн |
| 100+ | 83.07 грн |
| 500+ | 62.89 грн |
| FDMC8030 |
|
Виробник: onsemi
Description: MOSFET 2N-CH 40V 12A 8PWR33
Packaging: Cut Tape (CT)
Package / Case: 8-PowerWDFN
Mounting Type: Surface Mount
Configuration: 2 N-Channel (Dual)
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
Power - Max: 800mW
Drain to Source Voltage (Vdss): 40V
Current - Continuous Drain (Id) @ 25°C: 12A
Input Capacitance (Ciss) (Max) @ Vds: 1975pF @ 20V
Rds On (Max) @ Id, Vgs: 10mOhm @ 12A, 10V
Gate Charge (Qg) (Max) @ Vgs: 30nC @ 10V
FET Feature: Logic Level Gate
Vgs(th) (Max) @ Id: 2.8V @ 250µA
Supplier Device Package: 8-Power33 (3x3)
Description: MOSFET 2N-CH 40V 12A 8PWR33
Packaging: Cut Tape (CT)
Package / Case: 8-PowerWDFN
Mounting Type: Surface Mount
Configuration: 2 N-Channel (Dual)
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
Power - Max: 800mW
Drain to Source Voltage (Vdss): 40V
Current - Continuous Drain (Id) @ 25°C: 12A
Input Capacitance (Ciss) (Max) @ Vds: 1975pF @ 20V
Rds On (Max) @ Id, Vgs: 10mOhm @ 12A, 10V
Gate Charge (Qg) (Max) @ Vgs: 30nC @ 10V
FET Feature: Logic Level Gate
Vgs(th) (Max) @ Id: 2.8V @ 250µA
Supplier Device Package: 8-Power33 (3x3)
на замовлення 8259 шт:
термін постачання 21-31 дні (днів)| Кількість | Ціна |
|---|---|
| 4+ | 109.00 грн |
| 10+ | 85.53 грн |
| 100+ | 66.58 грн |
| 500+ | 52.96 грн |
| 1000+ | 43.14 грн |
| FDMS8018 |
|
Виробник: onsemi
Description: MOSFET N-CH 30V 30A/120A 8PQFN
Packaging: Cut Tape (CT)
Package / Case: 8-PowerTDFN
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 30A (Ta), 120A (Tc)
Rds On (Max) @ Id, Vgs: 1.8mOhm @ 30A, 10V
Power Dissipation (Max): 2.5W (Ta), 83W (Tc)
Vgs(th) (Max) @ Id: 3V @ 250µA
Supplier Device Package: 8-PQFN (5x6)
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 30 V
Gate Charge (Qg) (Max) @ Vgs: 61 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 5235 pF @ 15 V
Description: MOSFET N-CH 30V 30A/120A 8PQFN
Packaging: Cut Tape (CT)
Package / Case: 8-PowerTDFN
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 30A (Ta), 120A (Tc)
Rds On (Max) @ Id, Vgs: 1.8mOhm @ 30A, 10V
Power Dissipation (Max): 2.5W (Ta), 83W (Tc)
Vgs(th) (Max) @ Id: 3V @ 250µA
Supplier Device Package: 8-PQFN (5x6)
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 30 V
Gate Charge (Qg) (Max) @ Vgs: 61 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 5235 pF @ 15 V
на замовлення 20164 шт:
термін постачання 21-31 дні (днів)| Кількість | Ціна |
|---|---|
| 2+ | 196.72 грн |
| 10+ | 121.86 грн |
| 100+ | 83.34 грн |
| 500+ | 62.75 грн |
| 1000+ | 57.78 грн |
| FDMS86310 |
|
Виробник: onsemi
Description: MOSFET N-CH 80V 17A/50A 8PQFN
Packaging: Cut Tape (CT)
Package / Case: 8-PowerTDFN
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 17A (Ta), 50A (Tc)
Rds On (Max) @ Id, Vgs: 4.8mOhm @ 17A, 10V
Power Dissipation (Max): 2.5W (Ta), 96W (Tc)
Vgs(th) (Max) @ Id: 4.5V @ 250µA
Supplier Device Package: 8-PQFN (5x6)
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 8V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 80 V
Gate Charge (Qg) (Max) @ Vgs: 95 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 6290 pF @ 40 V
Description: MOSFET N-CH 80V 17A/50A 8PQFN
Packaging: Cut Tape (CT)
Package / Case: 8-PowerTDFN
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 17A (Ta), 50A (Tc)
Rds On (Max) @ Id, Vgs: 4.8mOhm @ 17A, 10V
Power Dissipation (Max): 2.5W (Ta), 96W (Tc)
Vgs(th) (Max) @ Id: 4.5V @ 250µA
Supplier Device Package: 8-PQFN (5x6)
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 8V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 80 V
Gate Charge (Qg) (Max) @ Vgs: 95 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 6290 pF @ 40 V
на замовлення 3173 шт:
термін постачання 21-31 дні (днів)| Кількість | Ціна |
|---|---|
| 2+ | 203.53 грн |
| 10+ | 150.97 грн |
| 100+ | 105.66 грн |
| 500+ | 85.50 грн |
| FAN7081MX-GF085 |
|
Виробник: onsemi
Description: IC GATE DRVR HIGH-SIDE 8SOIC
Packaging: Cut Tape (CT)
Package / Case: 8-SOIC (0.154", 3.90mm Width)
Mounting Type: Surface Mount
Operating Temperature: -40°C ~ 150°C (TJ)
Voltage - Supply: 10V ~ 20V
Input Type: Inverting
High Side Voltage - Max (Bootstrap): 600 V
Supplier Device Package: 8-SOIC
Rise / Fall Time (Typ): 15ns, 10ns
Channel Type: Single
Driven Configuration: High-Side
Number of Drivers: 1
Gate Type: IGBT, N-Channel MOSFET
Current - Peak Output (Source, Sink): 250mA, 500mA
Grade: Automotive
Part Status: Active
DigiKey Programmable: Not Verified
Qualification: AEC-Q100
Description: IC GATE DRVR HIGH-SIDE 8SOIC
Packaging: Cut Tape (CT)
Package / Case: 8-SOIC (0.154", 3.90mm Width)
Mounting Type: Surface Mount
Operating Temperature: -40°C ~ 150°C (TJ)
Voltage - Supply: 10V ~ 20V
Input Type: Inverting
High Side Voltage - Max (Bootstrap): 600 V
Supplier Device Package: 8-SOIC
Rise / Fall Time (Typ): 15ns, 10ns
Channel Type: Single
Driven Configuration: High-Side
Number of Drivers: 1
Gate Type: IGBT, N-Channel MOSFET
Current - Peak Output (Source, Sink): 250mA, 500mA
Grade: Automotive
Part Status: Active
DigiKey Programmable: Not Verified
Qualification: AEC-Q100
на замовлення 2473 шт:
термін постачання 21-31 дні (днів)| Кількість | Ціна |
|---|---|
| 2+ | 236.74 грн |
| 10+ | 144.33 грн |
| 25+ | 122.45 грн |
| 100+ | 91.73 грн |
| 250+ | 80.35 грн |
| 500+ | 73.34 грн |
| 1000+ | 66.36 грн |
| FDMS86102LZ |
|
Виробник: onsemi
Description: MOSFET N-CH 100V 7A/22A 8PQFN
Packaging: Cut Tape (CT)
Package / Case: 8-PowerTDFN
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 7A (Ta), 22A (Tc)
Rds On (Max) @ Id, Vgs: 25mOhm @ 7A, 10V
Power Dissipation (Max): 2.5W (Ta), 69W (Tc)
Vgs(th) (Max) @ Id: 2.5V @ 250µA
Supplier Device Package: 8-PQFN (5x6)
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 100 V
Gate Charge (Qg) (Max) @ Vgs: 22 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 1305 pF @ 50 V
Description: MOSFET N-CH 100V 7A/22A 8PQFN
Packaging: Cut Tape (CT)
Package / Case: 8-PowerTDFN
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 7A (Ta), 22A (Tc)
Rds On (Max) @ Id, Vgs: 25mOhm @ 7A, 10V
Power Dissipation (Max): 2.5W (Ta), 69W (Tc)
Vgs(th) (Max) @ Id: 2.5V @ 250µA
Supplier Device Package: 8-PQFN (5x6)
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 100 V
Gate Charge (Qg) (Max) @ Vgs: 22 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 1305 pF @ 50 V
на замовлення 46647 шт:
термін постачання 21-31 дні (днів)| Кількість | Ціна |
|---|---|
| 2+ | 206.94 грн |
| 10+ | 128.59 грн |
| 100+ | 88.52 грн |
| 500+ | 68.06 грн |
| FDS86140 |
|
Виробник: onsemi
Description: MOSFET N-CH 100V 11.2A 8SOIC
Packaging: Cut Tape (CT)
Package / Case: 8-SOIC (0.154", 3.90mm Width)
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 11.2A (Ta)
Rds On (Max) @ Id, Vgs: 9.8mOhm @ 11.2A, 10V
Power Dissipation (Max): 2.5W (Ta), 5W (Tc)
Vgs(th) (Max) @ Id: 4V @ 250µA
Supplier Device Package: 8-SOIC
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 6V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 100 V
Gate Charge (Qg) (Max) @ Vgs: 41 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 2580 pF @ 50 V
Description: MOSFET N-CH 100V 11.2A 8SOIC
Packaging: Cut Tape (CT)
Package / Case: 8-SOIC (0.154", 3.90mm Width)
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 11.2A (Ta)
Rds On (Max) @ Id, Vgs: 9.8mOhm @ 11.2A, 10V
Power Dissipation (Max): 2.5W (Ta), 5W (Tc)
Vgs(th) (Max) @ Id: 4V @ 250µA
Supplier Device Package: 8-SOIC
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 6V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 100 V
Gate Charge (Qg) (Max) @ Vgs: 41 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 2580 pF @ 50 V
на замовлення 2347 шт:
термін постачання 21-31 дні (днів)| Кількість | Ціна |
|---|---|
| 3+ | 133.70 грн |
| 10+ | 113.00 грн |
| FDMC8321L |
|
Виробник: onsemi
Description: MOSFET N-CH 40V 22A/49A POWER33
Packaging: Cut Tape (CT)
Package / Case: 8-PowerTDFN
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 22A (Ta), 49A (Tc)
Rds On (Max) @ Id, Vgs: 2.5mOhm @ 22A, 10V
Power Dissipation (Max): 2.3W (Ta), 40W (Tc)
Vgs(th) (Max) @ Id: 3V @ 250µA
Supplier Device Package: Power33
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 40 V
Gate Charge (Qg) (Max) @ Vgs: 61 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 3900 pF @ 20 V
Description: MOSFET N-CH 40V 22A/49A POWER33
Packaging: Cut Tape (CT)
Package / Case: 8-PowerTDFN
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 22A (Ta), 49A (Tc)
Rds On (Max) @ Id, Vgs: 2.5mOhm @ 22A, 10V
Power Dissipation (Max): 2.3W (Ta), 40W (Tc)
Vgs(th) (Max) @ Id: 3V @ 250µA
Supplier Device Package: Power33
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 40 V
Gate Charge (Qg) (Max) @ Vgs: 61 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 3900 pF @ 20 V
на замовлення 14448 шт:
термін постачання 21-31 дні (днів)| Кількість | Ціна |
|---|---|
| 2+ | 248.67 грн |
| 10+ | 157.70 грн |
| 100+ | 112.10 грн |
| 500+ | 86.04 грн |
| 1000+ | 79.64 грн |
| FDMC89521L |
|
Виробник: onsemi
Description: MOSFET 2N-CH 60V 8.2A 8PWR33
Packaging: Cut Tape (CT)
Package / Case: 8-PowerWDFN
Mounting Type: Surface Mount
Configuration: 2 N-Channel (Dual)
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
Power - Max: 1.9W (Ta), 16W (Tc)
Drain to Source Voltage (Vdss): 60V
Current - Continuous Drain (Id) @ 25°C: 8.2A (Ta)
Input Capacitance (Ciss) (Max) @ Vds: 1635pF @ 30V
Rds On (Max) @ Id, Vgs: 17mOhm @ 8.2A, 10V
Gate Charge (Qg) (Max) @ Vgs: 24nC @ 10V
FET Feature: Logic Level Gate
Vgs(th) (Max) @ Id: 3V @ 250µA
Supplier Device Package: 8-Power33 (3x3)
Description: MOSFET 2N-CH 60V 8.2A 8PWR33
Packaging: Cut Tape (CT)
Package / Case: 8-PowerWDFN
Mounting Type: Surface Mount
Configuration: 2 N-Channel (Dual)
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
Power - Max: 1.9W (Ta), 16W (Tc)
Drain to Source Voltage (Vdss): 60V
Current - Continuous Drain (Id) @ 25°C: 8.2A (Ta)
Input Capacitance (Ciss) (Max) @ Vds: 1635pF @ 30V
Rds On (Max) @ Id, Vgs: 17mOhm @ 8.2A, 10V
Gate Charge (Qg) (Max) @ Vgs: 24nC @ 10V
FET Feature: Logic Level Gate
Vgs(th) (Max) @ Id: 3V @ 250µA
Supplier Device Package: 8-Power33 (3x3)
на замовлення 5311 шт:
термін постачання 21-31 дні (днів)| Кількість | Ціна |
|---|---|
| 2+ | 229.08 грн |
| 10+ | 142.61 грн |
| 100+ | 98.21 грн |
| 500+ | 74.33 грн |
| 1000+ | 68.59 грн |