| Фото | Назва | Виробник | Інформація | Доступність | Ціна без ПДВ | ||||||||||||||||
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FXMHD103UMX | onsemi |
Description: IC INTERFACE SPECIALIZED 12UMLPSupplier Device Package: 12-UMLP (1.8x1.8) Applications: Cell Phones, Digital Cameras, Media Players Voltage - Supply: 1.6V ~ 3.6V Mounting Type: Surface Mount Package / Case: 12-UFQFN Packaging: Cut Tape (CT) |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||||||||||
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FXL6408UMX | onsemi |
Description: IC XPNDR 400KHZ I2C 16UMLPPackaging: Cut Tape (CT) Features: POR Package / Case: 16-UFQFN Output Type: Open Drain Mounting Type: Surface Mount Interface: I2C Number of I/O: 8 Operating Temperature: -40°C ~ 85°C Voltage - Supply: 1.65V ~ 4V Clock Frequency: 400 kHz Interrupt Output: Yes Supplier Device Package: 16-UMLP (1.8x2.6) Current - Output Source/Sink: 6mA Part Status: Active DigiKey Programmable: Not Verified |
на замовлення 10691 шт: термін постачання 21-31 дні (днів) |
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FDMS86101A | onsemi |
Description: MOSFET N-CH 100V 13A/60A 8PQFNPackaging: Cut Tape (CT) Package / Case: 8-PowerTDFN Mounting Type: Surface Mount Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 13A (Ta), 60A (Tc) Rds On (Max) @ Id, Vgs: 8mOhm @ 13A, 10V Power Dissipation (Max): 2.5W (Ta), 104W (Tc) Vgs(th) (Max) @ Id: 4V @ 250µA Supplier Device Package: 8-PQFN (5x6) Part Status: Active Drive Voltage (Max Rds On, Min Rds On): 6V, 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 100 V Gate Charge (Qg) (Max) @ Vgs: 58 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 4120 pF @ 50 V |
на замовлення 1169 шт: термін постачання 21-31 дні (днів) |
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FAN53600AUC33X | onsemi |
Description: IC REG BUCK 3.3V 600MA 6WLCSPPart Status: Last Time Buy Voltage - Output (Min/Fixed): 3.3V Voltage - Input (Min): 2.3V Synchronous Rectifier: Yes Supplier Device Package: 6-WLCSP (1.23x0.88) Topology: Buck Voltage - Input (Max): 5.5V Frequency - Switching: 3MHz Output Configuration: Positive Operating Temperature: -40°C ~ 85°C (TA) Current - Output: 600mA Function: Step-Down Number of Outputs: 1 Mounting Type: Surface Mount Output Type: Fixed Package / Case: 6-UFBGA, WLCSP Packaging: Cut Tape (CT) |
на замовлення 6200 шт: термін постачання 21-31 дні (днів) |
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FAN3227TMX-F085 | onsemi |
Description: IC GATE DRVR LOW-SIDE 8SOICDigiKey Programmable: Not Verified Qualification: AEC-Q100 Grade: Automotive Logic Voltage - VIL, VIH: 0.8V, 2V Gate Type: MOSFET (N-Channel) Number of Drivers: 2 Driven Configuration: Low-Side Channel Type: Independent Rise / Fall Time (Typ): 12ns, 9ns Supplier Device Package: 8-SOIC Input Type: Non-Inverting Voltage - Supply: 4.5V ~ 18V Operating Temperature: -40°C ~ 125°C (TA) Mounting Type: Surface Mount Package / Case: 8-SOIC (0.154", 3.90mm Width) Packaging: Cut Tape (CT) Part Status: Active Current - Peak Output (Source, Sink): 3A, 3A |
на замовлення 12240 шт: термін постачання 21-31 дні (днів) |
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FDMC86260 | onsemi |
Description: MOSFET N CH 150V 5.4A POWER 33Packaging: Cut Tape (CT) Package / Case: 8-PowerWDFN Mounting Type: Surface Mount Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 5.4A (Ta), 16A (Tc) Rds On (Max) @ Id, Vgs: 34mOhm @ 5.4A, 10V Power Dissipation (Max): 2.3W (Ta), 54W (Tc) Vgs(th) (Max) @ Id: 4V @ 250µA Supplier Device Package: Power33 Part Status: Active Drive Voltage (Max Rds On, Min Rds On): 6V, 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 150 V Gate Charge (Qg) (Max) @ Vgs: 21 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 1330 pF @ 75 V |
на замовлення 1527 шт: термін постачання 21-31 дні (днів) |
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FOD8160R2 | onsemi |
Description: OPTOISO 5KV OPEN COLLECTOR 5SOPCurrent - Output / Channel: 50 mA Number of Channels: 1 Propagation Delay tpLH / tpHL (Max): 90ns, 80ns Common Mode Transient Immunity (Min): 20kV/µs Rise / Fall Time (Typ): 22ns, 9ns Supplier Device Package: 5-SOP Inputs - Side 1/Side 2: 1/0 Current - DC Forward (If) (Max): 25mA Voltage - Isolation: 5000Vrms Input Type: DC Data Rate: 10Mbps Voltage - Forward (Vf) (Typ): 1.45V Voltage - Supply: 3V ~ 5.5V Operating Temperature: -40°C ~ 100°C Mounting Type: Surface Mount Output Type: Open Collector, Schottky Clamped Package / Case: 6-SOIC (0.362", 9.20mm Width), 5 Leads Packaging: Cut Tape (CT) |
на замовлення 1000 шт: термін постачання 21-31 дні (днів) |
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6N137SDVM | onsemi |
Description: OPTOISOLTR 5KV OPEN COLL 8-SMDPackaging: Cut Tape (CT) Package / Case: 8-SMD, Gull Wing Output Type: Open Collector Mounting Type: Surface Mount Operating Temperature: -40°C ~ 100°C Voltage - Supply: 4.5V ~ 5.5V Voltage - Forward (Vf) (Typ): 1.45V Data Rate: 10Mbps Input Type: DC Voltage - Isolation: 5000Vrms Current - DC Forward (If) (Max): 50mA Inputs - Side 1/Side 2: 1/0 Supplier Device Package: 8-SMD Rise / Fall Time (Typ): 30ns, 10ns Common Mode Transient Immunity (Min): 10kV/µs (Typ) Propagation Delay tpLH / tpHL (Max): 75ns, 75ns Part Status: Active Number of Channels: 1 Current - Output / Channel: 50 mA |
на замовлення 960 шт: термін постачання 21-31 дні (днів) |
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FDMB2308PZ | onsemi |
Description: MOSFET 2P-CH 6MLPPackaging: Cut Tape (CT) Package / Case: 6-WDFN Exposed Pad Mounting Type: Surface Mount Configuration: 2 P-Channel (Dual) Common Drain Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) Power - Max: 800mW Input Capacitance (Ciss) (Max) @ Vds: 3030pF @ 10V Rds On (Max) @ Id, Vgs: 36mOhm @ 5.7A, 4.5V Gate Charge (Qg) (Max) @ Vgs: 30nC @ 10V FET Feature: Logic Level Gate Vgs(th) (Max) @ Id: 1.5V @ 250µA Supplier Device Package: 6-MLP (2x3) Part Status: Active |
на замовлення 2944 шт: термін постачання 21-31 дні (днів) |
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FDMS86152 | onsemi |
Description: MOSFET N-CH 100V 14A/45A POWER56Vgs (Max): ±20V Drive Voltage (Max Rds On, Min Rds On): 6V, 10V Part Status: Active Supplier Device Package: 8-PQFN (5x6) Vgs(th) (Max) @ Id: 4V @ 250µA Power Dissipation (Max): 2.7W (Ta), 125W (Tc) Rds On (Max) @ Id, Vgs: 6mOhm @ 14A, 10V Current - Continuous Drain (Id) @ 25°C: 14A (Ta), 45A (Tc) FET Type: N-Channel Technology: MOSFET (Metal Oxide) Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Surface Mount Package / Case: 8-PowerTDFN Packaging: Cut Tape (CT) Input Capacitance (Ciss) (Max) @ Vds: 3370 pF @ 50 V Gate Charge (Qg) (Max) @ Vgs: 50 nC @ 10 V Drain to Source Voltage (Vdss): 100 V |
на замовлення 13963 шт: термін постачання 21-31 дні (днів) |
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FODM8801CR2 | onsemi |
Description: OPTOISO 3.75KV TRANS 4-MINI-FLATPackaging: Cut Tape (CT) Package / Case: 4-SOIC (0.173", 4.40mm Width) Output Type: Transistor Mounting Type: Surface Mount Operating Temperature: -40°C ~ 125°C Voltage - Forward (Vf) (Typ): 1.35V Input Type: DC Current - Output / Channel: 30mA Voltage - Isolation: 3750Vrms Current Transfer Ratio (Min): 200% @ 1mA Vce Saturation (Max): 400mV Current Transfer Ratio (Max): 400% @ 1mA Supplier Device Package: 4-Mini-Flat Voltage - Output (Max): 75V Turn On / Turn Off Time (Typ): 6µs, 6µs Rise / Fall Time (Typ): 5µs, 5.5µs Number of Channels: 1 Current - DC Forward (If) (Max): 20 mA |
на замовлення 131 шт: термін постачання 21-31 дні (днів) |
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FDB390N15A | onsemi |
Description: MOSFET N-CH 150V 27A D2PAKInput Capacitance (Ciss) (Max) @ Vds: 1285 pF @ 75 V Gate Charge (Qg) (Max) @ Vgs: 18.6 nC @ 10 V Drain to Source Voltage (Vdss): 150 V Vgs (Max): ±20V Rds On (Max) @ Id, Vgs: 39mOhm @ 27A, 10V Current - Continuous Drain (Id) @ 25°C: 27A (Tc) FET Type: N-Channel Technology: MOSFET (Metal Oxide) Operating Temperature: -55°C ~ 175°C (TJ) Mounting Type: Surface Mount Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB Packaging: Cut Tape (CT) Drive Voltage (Max Rds On, Min Rds On): 10V Part Status: Active Supplier Device Package: TO-263 (D2Pak) Vgs(th) (Max) @ Id: 4V @ 250µA Power Dissipation (Max): 75W (Tc) |
на замовлення 1818 шт: термін постачання 21-31 дні (днів) |
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FDMS3606AS | onsemi |
Description: MOSFET 2N-CH 30V 13A/27A POWER56Current - Continuous Drain (Id) @ 25°C: 13A, 27A Drain to Source Voltage (Vdss): 30V Power - Max: 1W Technology: MOSFET (Metal Oxide) Operating Temperature: -55°C ~ 150°C (TJ) Configuration: 2 N-Channel (Dual) Asymmetrical Mounting Type: Surface Mount Package / Case: 8-PowerTDFN Packaging: Cut Tape (CT) Supplier Device Package: Power56 Vgs(th) (Max) @ Id: 2.7V @ 250µA FET Feature: Logic Level Gate Gate Charge (Qg) (Max) @ Vgs: 29nC @ 10V Rds On (Max) @ Id, Vgs: 8mOhm @ 13A, 10V Input Capacitance (Ciss) (Max) @ Vds: 1695pF @ 15V |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||||||||||
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FSA2866UMX | onsemi |
Description: IC ANALOG SWITCH 20UMLP Number of Channels: 1 Multiplexer/Demultiplexer Circuit: 2:2 Voltage - Supply, Single (V+): 1.65V ~ 4.3V -3db Bandwidth: 210MHz On-State Resistance (Max): 3.5Ohm Applications: Telecommunications Operating Temperature: -40°C ~ 85°C (TA) Mounting Type: Surface Mount Package / Case: 20-UFQFN Exposed Pad Features: Break-Before-Make Packaging: Cut Tape (CT) Supplier Device Package: 20-UMLP (3x3) |
на замовлення 31 шт: термін постачання 21-31 дні (днів) |
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FOD3182TSR2V | onsemi |
Description: OPTOISO 5KV 1CH GATE DVR 8SMDVoltage - Output Supply: 10V ~ 30V Current - DC Forward (If) (Max): 25 mA Number of Channels: 1 Part Status: Active Pulse Width Distortion (Max): 65ns Propagation Delay tpLH / tpHL (Max): 210ns, 210ns Common Mode Transient Immunity (Min): 35kV/µs Rise / Fall Time (Typ): 38ns, 24ns Supplier Device Package: 8-SMD Approval Agency: UL, VDE Voltage - Isolation: 5000Vrms Current - Output High, Low: 2.5A, 2.5A Technology: Optical Coupling Current - Peak Output: 3A Voltage - Forward (Vf) (Typ): 1.43V Operating Temperature: -40°C ~ 100°C Mounting Type: Surface Mount Package / Case: 8-SMD, Gull Wing Packaging: Cut Tape (CT) |
на замовлення 730 шт: термін постачання 21-31 дні (днів) |
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FODM8801BR2 | onsemi |
Description: OPTOISO 3.75KV TRANS 4-MINI-FLATMounting Type: Surface Mount Output Type: Transistor Package / Case: 4-SOIC (0.173", 4.40mm Width) Packaging: Cut Tape (CT) Current - DC Forward (If) (Max): 20 mA Number of Channels: 1 Rise / Fall Time (Typ): 5µs, 5.5µs Turn On / Turn Off Time (Typ): 6µs, 6µs Voltage - Output (Max): 75V Supplier Device Package: 4-Mini-Flat Current Transfer Ratio (Max): 260% @ 1mA Vce Saturation (Max): 400mV Current Transfer Ratio (Min): 130% @ 1mA Voltage - Isolation: 3750Vrms Current - Output / Channel: 30mA Input Type: DC Voltage - Forward (Vf) (Typ): 1.35V Operating Temperature: -40°C ~ 125°C |
на замовлення 1517086 шт: термін постачання 21-31 дні (днів) |
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FODM8801AR2 | onsemi |
Description: OPTOISO 3.75KV TRANS 4-MINI-FLATPackaging: Cut Tape (CT) Current - DC Forward (If) (Max): 20 mA Number of Channels: 1 Rise / Fall Time (Typ): 5µs, 5.5µs Turn On / Turn Off Time (Typ): 6µs, 6µs Voltage - Output (Max): 75V Supplier Device Package: 4-Mini-Flat Current Transfer Ratio (Max): 160% @ 1mA Vce Saturation (Max): 400mV Current Transfer Ratio (Min): 80% @ 1mA Voltage - Isolation: 3750Vrms Current - Output / Channel: 30mA Input Type: DC Voltage - Forward (Vf) (Typ): 1.35V Operating Temperature: -40°C ~ 125°C Mounting Type: Surface Mount Output Type: Transistor Package / Case: 4-SOIC (0.173", 4.40mm Width) |
на замовлення 131682 шт: термін постачання 21-31 дні (днів) |
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FXLP4555MPX | onsemi |
Description: IC XLTR VL BIDIR 16-MLPPackaging: Cut Tape (CT) Features: SIM Card Interface Package / Case: 16-WFQFN Exposed Pad Output Type: Tri-State, Non-Inverted Mounting Type: Surface Mount Operating Temperature: -40°C ~ 85°C (TA) Supplier Device Package: 16-MLP (3x3) Channel Type: Bidirectional Translator Type: Voltage Level Channels per Circuit: 1 Voltage - VCCA: 1.65 V ~ 5.5 V Voltage - VCCB: 1.7 V ~ 3.2 V Number of Circuits: 1 |
на замовлення 6619 шт: термін постачання 21-31 дні (днів) |
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FOD3182SD | onsemi |
Description: OPTOISO 5KV 1CH GATE DVR 8SMDVoltage - Output Supply: 10V ~ 30V Current - DC Forward (If) (Max): 25 mA Number of Channels: 1 Part Status: Active Pulse Width Distortion (Max): 65ns Propagation Delay tpLH / tpHL (Max): 210ns, 210ns Common Mode Transient Immunity (Min): 35kV/µs Rise / Fall Time (Typ): 38ns, 24ns Supplier Device Package: 8-SMD Approval Agency: UL Voltage - Isolation: 5000Vrms Current - Output High, Low: 2.5A, 2.5A Technology: Optical Coupling Current - Peak Output: 3A Voltage - Forward (Vf) (Typ): 1.43V Operating Temperature: -40°C ~ 100°C Mounting Type: Surface Mount Package / Case: 8-SMD, Gull Wing Packaging: Cut Tape (CT) |
на замовлення 15436 шт: термін постачання 21-31 дні (днів) |
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FOD3182SDV | onsemi |
Description: OPTOISO 5KV 1CH GATE DVR 8SMDMounting Type: Surface Mount Package / Case: 8-SMD, Gull Wing Packaging: Cut Tape (CT) Voltage - Output Supply: 10V ~ 30V Current - DC Forward (If) (Max): 25 mA Number of Channels: 1 Part Status: Active Pulse Width Distortion (Max): 65ns Propagation Delay tpLH / tpHL (Max): 210ns, 210ns Common Mode Transient Immunity (Min): 35kV/µs Rise / Fall Time (Typ): 38ns, 24ns Supplier Device Package: 8-SMD Approval Agency: UL, VDE Voltage - Isolation: 5000Vrms Current - Output High, Low: 2.5A, 2.5A Technology: Optical Coupling Current - Peak Output: 3A Voltage - Forward (Vf) (Typ): 1.43V Operating Temperature: -40°C ~ 100°C |
на замовлення 22195 шт: термін постачання 21-31 дні (днів) |
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FMBS2383 | onsemi |
Description: TRANS NPN 160V 0.8A SUPERSOT-6Power - Max: 630 mW Voltage - Collector Emitter Breakdown (Max): 160 V Current - Collector (Ic) (Max): 800 mA Part Status: Obsolete Supplier Device Package: SuperSOT™-6 Frequency - Transition: 120MHz DC Current Gain (hFE) (Min) @ Ic, Vce: 80 @ 100mA, 5V Current - Collector Cutoff (Max): 100nA (ICBO) Vce Saturation (Max) @ Ib, Ic: 1V @ 50mA, 500mA Operating Temperature: 150°C (TJ) Transistor Type: NPN Mounting Type: Surface Mount Package / Case: SOT-23-6 Thin, TSOT-23-6 Packaging: Cut Tape (CT) |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||||||||||
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FXLA0104QFX | onsemi |
Description: IC XLTR VL BIDIR 12-UMLPPackaging: Cut Tape (CT) Features: Auto-Direction Sensing, Power-Off Protection Package / Case: 12-UFQFN Output Type: Tri-State, Non-Inverted Mounting Type: Surface Mount Operating Temperature: -40°C ~ 85°C (TA) Data Rate: 140Mbps Supplier Device Package: 12-UMLP (1.7x2) Channel Type: Bidirectional Translator Type: Voltage Level Channels per Circuit: 4 Voltage - VCCA: 1.1 V ~ 3.6 V Voltage - VCCB: 1.1 V ~ 3.6 V Number of Circuits: 1 |
на замовлення 4495 шт: термін постачання 21-31 дні (днів) |
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FAN48632UC33X | onsemi |
Description: IC REG CONV GSM PA 1OUT 16WLCSPSupplier Device Package: 16-WLCSP (1.78x1.78) Applications: Converter, GSM PA Operating Temperature: -40°C ~ 85°C Voltage - Input: 2.35V ~ 5.5V Number of Outputs: 1 Mounting Type: Surface Mount Voltage - Output: 3.3V, 3.49V Package / Case: 16-UFBGA, WLCSP Packaging: Cut Tape (CT) |
на замовлення 2999 шт: термін постачання 21-31 дні (днів) |
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FSAL200MTCX | onsemi |
Description: IC SWITCH SPDT X 4 12OHM 16TSSOP Operating Temperature: -40°C ~ 85°C (TA) Mounting Type: Surface Mount Package / Case: 16-TSSOP (0.173", 4.40mm Width) Packaging: Tape & Reel (TR) Number of Circuits: 4 Current - Leakage (IS(off)) (Max): 100µA Channel Capacitance (CS(off), CD(off)): 13pF Switch Time (Ton, Toff) (Max): 20ns, 10ns Channel-to-Channel Matching (ΔRon): 400mOhm Multiplexer/Demultiplexer Circuit: 2:1 Switch Circuit: SPDT Crosstalk: -70dB @ 30MHz Charge Injection: 7pC Voltage - Supply, Single (V+): 3V ~ 5.5V Supplier Device Package: 16-TSSOP -3db Bandwidth: 137MHz On-State Resistance (Max): 12Ohm |
на замовлення 5000 шт: термін постачання 21-31 дні (днів) |
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FSB50250AS | onsemi |
Description: MOSFET IPM 500V 1.2A 23-PWRSMDPackaging: Cut Tape (CT) Package / Case: 23-PowerSMD Module, Gull Wing Mounting Type: Surface Mount Type: MOSFET Configuration: 3 Phase Voltage - Isolation: 1500Vrms Current: 1.2 A Voltage: 500 V |
на замовлення 390 шт: термін постачання 21-31 дні (днів) |
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FSB50550AS | onsemi |
Description: MOSFET IPM 500V 2A 23-PWRSMD MODPackaging: Cut Tape (CT) Package / Case: 23-PowerSMD Module, Gull Wing Mounting Type: Surface Mount Type: MOSFET Configuration: 3 Phase Voltage - Isolation: 1500Vrms Part Status: Active Current: 2 A Voltage: 500 V |
на замовлення 157294 шт: термін постачання 21-31 дні (днів) |
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FSB50250AS | onsemi |
Description: MOSFET IPM 500V 1.2A 23-PWRSMDPackaging: Tape & Reel (TR) Package / Case: 23-PowerSMD Module, Gull Wing Mounting Type: Surface Mount Type: MOSFET Configuration: 3 Phase Voltage - Isolation: 1500Vrms Current: 1.2 A Voltage: 500 V |
товару немає в наявності |
Мінімальне замовлення: 450 шт В кошику од. на суму грн. | ||||||||||||||||
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FSB50550AS | onsemi |
Description: MOSFET IPM 500V 2A 23-PWRSMD MODPackaging: Tape & Reel (TR) Package / Case: 23-PowerSMD Module, Gull Wing Mounting Type: Surface Mount Type: MOSFET Configuration: 3 Phase Voltage - Isolation: 1500Vrms Part Status: Active Current: 2 A Voltage: 500 V |
на замовлення 157050 шт: термін постачання 21-31 дні (днів) |
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FSB50325AT | onsemi |
Description: MOSFET IPM 250V 1.7A 23-PWRDIPPackaging: Tube Package / Case: 23-PowerDIP Module, Offset Leads Mounting Type: Through Hole Type: MOSFET Configuration: 3 Phase Voltage - Isolation: 1500Vrms Current: 1.7 A Voltage: 250 V |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||||||||||
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FSB50550A | onsemi |
Description: MOSFET IPM 500V 2A 23-PWRDIP MODPackaging: Tube Package / Case: 23-PowerDIP Module (0.573", 14.56mm) Mounting Type: Through Hole Type: MOSFET Configuration: 3 Phase Voltage - Isolation: 1500Vrms Part Status: Last Time Buy Current: 2 A Voltage: 500 V |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||||||||||
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FSB50550AT | onsemi |
Description: MOSFET IPM 500V 2A 23-PWRDIP MODPackaging: Tube Package / Case: 23-PowerDIP Module (0.748", 19.00mm) Mounting Type: Through Hole Type: MOSFET Configuration: 3 Phase Voltage - Isolation: 1500Vrms Part Status: Active Current: 2 A Voltage: 500 V |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||||||||||
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FODM8801AV | onsemi |
Description: OPTOISO 3.75KV TRANS 4-MINI-FLATCurrent - DC Forward (If) (Max): 20 mA Number of Channels: 1 Rise / Fall Time (Typ): 5µs, 5.5µs Turn On / Turn Off Time (Typ): 6µs, 6µs Voltage - Output (Max): 75V Supplier Device Package: 4-Mini-Flat Current Transfer Ratio (Max): 160% @ 1mA Vce Saturation (Max): 400mV Current Transfer Ratio (Min): 80% @ 1mA Voltage - Isolation: 3750Vrms Current - Output / Channel: 30mA Input Type: DC Voltage - Forward (Vf) (Typ): 1.35V Operating Temperature: -40°C ~ 125°C Mounting Type: Surface Mount Output Type: Transistor Package / Case: 4-SOIC (0.173", 4.40mm Width) Packaging: Tube |
на замовлення 961 шт: термін постачання 21-31 дні (днів) |
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FODM8801BV | onsemi |
Description: OPTOISO 3.75KV TRANS 4-MINI-FLATPackaging: Tube Package / Case: 4-SOIC (0.173", 4.40mm Width) Output Type: Transistor Mounting Type: Surface Mount Operating Temperature: -40°C ~ 125°C Voltage - Forward (Vf) (Typ): 1.35V Input Type: DC Current - Output / Channel: 30mA Voltage - Isolation: 3750Vrms Current Transfer Ratio (Min): 130% @ 1mA Vce Saturation (Max): 400mV Current Transfer Ratio (Max): 260% @ 1mA Supplier Device Package: 4-Mini-Flat Voltage - Output (Max): 75V Turn On / Turn Off Time (Typ): 6µs, 6µs Rise / Fall Time (Typ): 5µs, 5.5µs Number of Channels: 1 Current - DC Forward (If) (Max): 20 mA |
на замовлення 238284 шт: термін постачання 21-31 дні (днів) |
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FAN7171M-F085 | onsemi |
Description: IC GATE DRVR HIGH-SIDE 8SOICQualification: AEC-Q100 Grade: Automotive Gate Type: IGBT, MOSFET (N-Channel) Number of Drivers: 1 Driven Configuration: High-Side Channel Type: Single Rise / Fall Time (Typ): 25ns, 15ns Supplier Device Package: 8-SOIC High Side Voltage - Max (Bootstrap): 600 V Input Type: Non-Inverting Voltage - Supply: 10V ~ 20V Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Surface Mount Package / Case: 8-SOIC (0.154", 3.90mm Width) Packaging: Tube DigiKey Programmable: Not Verified Part Status: Obsolete Current - Peak Output (Source, Sink): 4A, 4A Logic Voltage - VIL, VIH: 0.8V, 2.5V |
на замовлення 3265 шт: термін постачання 21-31 дні (днів) |
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FCPF260N60E-F152 | onsemi |
Description: MOSFET N-CH 600V 15A TO220FSupplier Device Package: TO-220F-3 Vgs(th) (Max) @ Id: 3.5V @ 250µA Power Dissipation (Max): 36W (Tc) Rds On (Max) @ Id, Vgs: 260mOhm @ 7.5A, 10V Current - Continuous Drain (Id) @ 25°C: 15A (Tc) FET Type: N-Channel Technology: MOSFET (Metal Oxide) Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Through Hole Package / Case: TO-220-3 Full Pack Packaging: Tube Input Capacitance (Ciss) (Max) @ Vds: 2500 pF @ 25 V Gate Charge (Qg) (Max) @ Vgs: 62 nC @ 10 V Drain to Source Voltage (Vdss): 600 V Part Status: Obsolete |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||||||||||
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FDI045N10A-F102 | onsemi |
Description: MOSFET N-CH 100V 120A I2PAKPackaging: Tube Package / Case: TO-262-3 Long Leads, I2PAK, TO-262AA Mounting Type: Through Hole Operating Temperature: -55°C ~ 175°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 120A (Tc) Rds On (Max) @ Id, Vgs: 4.5mOhm @ 100A, 10V Power Dissipation (Max): 263W (Tc) Vgs(th) (Max) @ Id: 4V @ 250µA Supplier Device Package: TO-262 (I2PAK) Part Status: Active Drive Voltage (Max Rds On, Min Rds On): 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 100 V Gate Charge (Qg) (Max) @ Vgs: 74 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 5270 pF @ 50 V |
на замовлення 72 шт: термін постачання 21-31 дні (днів) |
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FDP023N08B-F102 | onsemi |
Description: MOSFET N-CH 75V 120A TO220-3Input Capacitance (Ciss) (Max) @ Vds: 13765 pF @ 37.5 V Gate Charge (Qg) (Max) @ Vgs: 195 nC @ 10 V Drain to Source Voltage (Vdss): 75 V Vgs (Max): ±20V Drive Voltage (Max Rds On, Min Rds On): 10V Part Status: Active Supplier Device Package: TO-220-3 Vgs(th) (Max) @ Id: 3.8V @ 250µA Power Dissipation (Max): 245W (Tc) Operating Temperature: -55°C ~ 175°C (TJ) Mounting Type: Through Hole Package / Case: TO-220-3 Packaging: Tube Rds On (Max) @ Id, Vgs: 2.35mOhm @ 75A, 10V Current - Continuous Drain (Id) @ 25°C: 120A (Tc) FET Type: N-Channel Technology: MOSFET (Metal Oxide) |
на замовлення 1148 шт: термін постачання 21-31 дні (днів) |
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FDP027N08B-F102 | onsemi |
Description: MOSFET N-CH 80V 120A TO220-3Packaging: Tube Package / Case: TO-220-3 Mounting Type: Through Hole Operating Temperature: -55°C ~ 175°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 120A (Tc) Rds On (Max) @ Id, Vgs: 2.7mOhm @ 100A, 10V Power Dissipation (Max): 246W (Tc) Vgs(th) (Max) @ Id: 4.5V @ 250µA Supplier Device Package: TO-220-3 Part Status: Active Drive Voltage (Max Rds On, Min Rds On): 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 80 V Gate Charge (Qg) (Max) @ Vgs: 178 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 13530 pF @ 40 V |
на замовлення 286 шт: термін постачання 21-31 дні (днів) |
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FDP030N06B-F102 | onsemi |
Description: MOSFET N-CH 60V 120A TO220-3Packaging: Tube Package / Case: TO-220-3 Mounting Type: Through Hole Operating Temperature: -55°C ~ 175°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 120A (Tc) Rds On (Max) @ Id, Vgs: 3.1mOhm @ 100A, 10V Power Dissipation (Max): 205W (Tc) Vgs(th) (Max) @ Id: 4V @ 250µA Supplier Device Package: TO-220-3 Part Status: Active Drive Voltage (Max Rds On, Min Rds On): 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 60 V Gate Charge (Qg) (Max) @ Vgs: 99 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 8030 pF @ 30 V |
на замовлення 364 шт: термін постачання 21-31 дні (днів) |
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FDP032N08B-F102 | onsemi |
Description: MOSFET N-CH 80V 120A TO220-3Part Status: Active Supplier Device Package: TO-220-3 Vgs(th) (Max) @ Id: 4.5V @ 250µA Power Dissipation (Max): 263W (Tc) Rds On (Max) @ Id, Vgs: 3.3mOhm @ 100A, 10V Current - Continuous Drain (Id) @ 25°C: 120A (Tc) FET Type: N-Channel Technology: MOSFET (Metal Oxide) Operating Temperature: -55°C ~ 175°C (TJ) Mounting Type: Through Hole Package / Case: TO-220-3 Packaging: Tube Input Capacitance (Ciss) (Max) @ Vds: 10965 pF @ 40 V Gate Charge (Qg) (Max) @ Vgs: 144 nC @ 10 V Drain to Source Voltage (Vdss): 80 V Vgs (Max): ±20V Drive Voltage (Max Rds On, Min Rds On): 10V |
на замовлення 4868 шт: термін постачання 21-31 дні (днів) |
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FDP045N10A-F102 | onsemi |
Description: MOSFET N-CH 100V 120A TO220-3Packaging: Tube Package / Case: TO-220-3 Mounting Type: Through Hole Operating Temperature: -55°C ~ 175°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 120A (Tc) Rds On (Max) @ Id, Vgs: 4.5mOhm @ 100A, 10V Power Dissipation (Max): 263W (Tc) Vgs(th) (Max) @ Id: 4V @ 250µA Supplier Device Package: TO-220-3 Part Status: Active Drive Voltage (Max Rds On, Min Rds On): 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 100 V Gate Charge (Qg) (Max) @ Vgs: 74 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 5270 pF @ 50 V |
на замовлення 952 шт: термін постачання 21-31 дні (днів) |
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FDP085N10A-F102 | onsemi |
Description: MOSFET N-CH 100V 96A TO220-3Packaging: Tube Package / Case: TO-220-3 Mounting Type: Through Hole Operating Temperature: -55°C ~ 175°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 96A (Tc) Rds On (Max) @ Id, Vgs: 8.5mOhm @ 96A, 10V Power Dissipation (Max): 188W (Tc) Vgs(th) (Max) @ Id: 4V @ 250µA Supplier Device Package: TO-220-3 Part Status: Active Drive Voltage (Max Rds On, Min Rds On): 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 100 V Gate Charge (Qg) (Max) @ Vgs: 40 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 2695 pF @ 50 V |
на замовлення 800 шт: термін постачання 21-31 дні (днів) |
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FGH15T120SMD-F155 | onsemi |
Description: IGBT TRENCH FS 1200V 30A TO-247Switching Energy: 1.15mJ (on), 460µJ (off) Td (on/off) @ 25°C: 32ns/490ns IGBT Type: Trench Field Stop Supplier Device Package: TO-247-3 Vce(on) (Max) @ Vge, Ic: 2.4V @ 15V, 15A Reverse Recovery Time (trr): 72 ns Input Type: Standard Operating Temperature: -55°C ~ 175°C (TJ) Mounting Type: Through Hole Package / Case: TO-247-3 Packaging: Tube Power - Max: 333 W Current - Collector Pulsed (Icm): 60 A Voltage - Collector Emitter Breakdown (Max): 1200 V Current - Collector (Ic) (Max): 30 A Part Status: Obsolete Gate Charge: 128 nC Test Condition: 600V, 15A, 34Ohm, 15V |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||||||||||
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FGH25T120SMD-F155 | onsemi |
Description: IGBT TRENCH FS 1200V 50A TO-247Mounting Type: Through Hole Package / Case: TO-247-3 Packaging: Tube Power - Max: 428 W Current - Collector Pulsed (Icm): 100 A Voltage - Collector Emitter Breakdown (Max): 1200 V Current - Collector (Ic) (Max): 50 A Part Status: Active Gate Charge: 225 nC Test Condition: 600V, 25A, 23Ohm, 15V Switching Energy: 1.74mJ (on), 560µJ (off) Td (on/off) @ 25°C: 40ns/490ns IGBT Type: Trench Field Stop Supplier Device Package: TO-247-3 Vce(on) (Max) @ Vge, Ic: 2.4V @ 15V, 25A Reverse Recovery Time (trr): 60 ns Input Type: Standard Operating Temperature: -55°C ~ 175°C (TJ) |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||||||||||
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FGH30T65UPDT-F155 | onsemi |
Description: IGBT 650V 60A 250W TO247-3Power - Max: 250 W Current - Collector Pulsed (Icm): 90 A Voltage - Collector Emitter Breakdown (Max): 650 V Current - Collector (Ic) (Max): 60 A Part Status: Obsolete Gate Charge: 155 nC Test Condition: 400V, 30A, 8Ohm, 15V Switching Energy: 760µJ (on), 400µJ (off) Td (on/off) @ 25°C: 22ns/139ns IGBT Type: Trench Field Stop Supplier Device Package: TO-247-3 Vce(on) (Max) @ Vge, Ic: 2.3V @ 15V, 30A Reverse Recovery Time (trr): 43 ns Input Type: Standard Operating Temperature: -55°C ~ 175°C (TJ) Mounting Type: Through Hole Package / Case: TO-247-3 Packaging: Tube |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||||||||||
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FGH40T120SMD | onsemi |
Description: IGBT TRENCH FS 1200V 80A TO-247Packaging: Tube Package / Case: TO-247-3 Mounting Type: Through Hole Operating Temperature: -55°C ~ 175°C (TJ) Input Type: Standard Reverse Recovery Time (trr): 65 ns Vce(on) (Max) @ Vge, Ic: 2.4V @ 15V, 40A Supplier Device Package: TO-247-3 IGBT Type: Trench Field Stop Td (on/off) @ 25°C: 40ns/475ns Switching Energy: 2.7mJ (on), 1.1mJ (off) Test Condition: 600V, 40A, 10Ohm, 15V Gate Charge: 370 nC Part Status: Active Current - Collector (Ic) (Max): 80 A Voltage - Collector Emitter Breakdown (Max): 1200 V Current - Collector Pulsed (Icm): 160 A Power - Max: 555 W |
на замовлення 7750 шт: термін постачання 21-31 дні (днів) |
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FGH40T120SMD-F155 | onsemi |
Description: IGBT TRENCH FS 1200V 80A TO-247Packaging: Tube Package / Case: TO-247-3 Mounting Type: Through Hole Operating Temperature: -55°C ~ 175°C (TJ) Input Type: Standard Reverse Recovery Time (trr): 65 ns Vce(on) (Max) @ Vge, Ic: 2.4V @ 15V, 40A Supplier Device Package: TO-247-3 IGBT Type: Trench Field Stop Td (on/off) @ 25°C: 40ns/475ns Switching Energy: 2.7mJ (on), 1.1mJ (off) Test Condition: 600V, 40A, 10Ohm, 15V Gate Charge: 370 nC Part Status: Active Current - Collector (Ic) (Max): 80 A Voltage - Collector Emitter Breakdown (Max): 1200 V Current - Collector Pulsed (Icm): 160 A Power - Max: 555 W |
на замовлення 421 шт: термін постачання 21-31 дні (днів) |
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FOD8160V | onsemi |
Description: OPTOISO 5KV OPEN COLLECTOR 5-SOPCurrent - Output / Channel: 50 mA Number of Channels: 1 Propagation Delay tpLH / tpHL (Max): 90ns, 80ns Common Mode Transient Immunity (Min): 20kV/µs Rise / Fall Time (Typ): 22ns, 9ns Supplier Device Package: 5-SOP Inputs - Side 1/Side 2: 1/0 Current - DC Forward (If) (Max): 25mA Voltage - Isolation: 5000Vrms Input Type: DC Data Rate: 10Mbps Voltage - Forward (Vf) (Typ): 1.45V Voltage - Supply: 3V ~ 5.5V Operating Temperature: -40°C ~ 100°C Mounting Type: Surface Mount Output Type: Open Collector, Schottky Clamped Package / Case: 6-SOIC (0.362", 9.20mm Width), 5 Leads Packaging: Tube |
на замовлення 7900 шт: термін постачання 21-31 дні (днів) |
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RHRP860-F085 | onsemi |
Description: DIODE STANDARD 600V 8A TO2202Current - Reverse Leakage @ Vr: 100 µA @ 600 V Voltage - Forward (Vf) (Max) @ If: 2.1 V @ 8 A Voltage - DC Reverse (Vr) (Max): 600 V Part Status: Obsolete Operating Temperature - Junction: -65°C ~ 175°C Supplier Device Package: TO-220-2 Current - Average Rectified (Io): 8A Grade: Automotive Technology: Standard Reverse Recovery Time (trr): 35 ns Speed: Fast Recovery =< 500ns, > 200mA (Io) Mounting Type: Through Hole Package / Case: TO-220-2 Packaging: Tube Qualification: AEC-Q101 |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||||||||||
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FAN302HLMY-F117 | onsemi |
Description: IC OFFLINE SWITCH FLYBACK 8SOICPackaging: Tape & Reel (TR) Package / Case: 8-SOIC (0.154", 3.90mm Width) Mounting Type: Surface Mount Operating Temperature: -40°C ~ 105°C (TA) Duty Cycle: 67% Frequency - Switching: 85kHz Internal Switch(s): No Output Isolation: Isolated Topology: Flyback Voltage - Supply (Vcc/Vdd): 5V ~ 25V Supplier Device Package: 8-SOIC Fault Protection: Current Limiting, Over Temperature, Over Voltage Voltage - Start Up: 16 V Part Status: Obsolete |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||||||||||
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FAN3224CMX-F085 | onsemi |
Description: IC GATE DRVR LOW-SIDE 8SOICPackaging: Tape & Reel (TR) Package / Case: 8-SOIC (0.154", 3.90mm Width) Mounting Type: Surface Mount Operating Temperature: -40°C ~ 125°C (TA) Voltage - Supply: 4.5V ~ 18V Input Type: Non-Inverting Supplier Device Package: 8-SOIC Rise / Fall Time (Typ): 12ns, 9ns Channel Type: Independent Driven Configuration: Low-Side Number of Drivers: 2 Gate Type: MOSFET (N-Channel) Current - Peak Output (Source, Sink): 5A, 5A Part Status: Active DigiKey Programmable: Not Verified Grade: Automotive Qualification: AEC-Q100 |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||||||||||
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FAN3224TMX-F085 | onsemi |
Description: IC GATE DRVR LOW-SIDE 8SOICPackaging: Tape & Reel (TR) Package / Case: 8-SOIC (0.154", 3.90mm Width) Mounting Type: Surface Mount Operating Temperature: -40°C ~ 125°C (TA) Voltage - Supply: 4.5V ~ 18V Input Type: Non-Inverting Supplier Device Package: 8-SOIC Rise / Fall Time (Typ): 12ns, 9ns Channel Type: Independent Driven Configuration: Low-Side Number of Drivers: 2 Gate Type: MOSFET (N-Channel) Logic Voltage - VIL, VIH: 0.8V, 2V Current - Peak Output (Source, Sink): 5A, 5A Part Status: Active DigiKey Programmable: Not Verified Grade: Automotive Qualification: AEC-Q100 |
на замовлення 5000 шт: термін постачання 21-31 дні (днів) |
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FAN3226TMX-F085 | onsemi |
Description: IC GATE DRVR LOW-SIDE 8SOICPart Status: Active Current - Peak Output (Source, Sink): 3A, 3A Logic Voltage - VIL, VIH: 0.8V, 2V Gate Type: MOSFET (N-Channel) Number of Drivers: 2 Driven Configuration: Low-Side Channel Type: Independent Rise / Fall Time (Typ): 12ns, 9ns Supplier Device Package: 8-SOIC Input Type: Inverting Voltage - Supply: 4.5V ~ 18V Operating Temperature: -40°C ~ 125°C (TA) Mounting Type: Surface Mount Qualification: AEC-Q100 Grade: Automotive DigiKey Programmable: Not Verified Package / Case: 8-SOIC (0.154", 3.90mm Width) Packaging: Tape & Reel (TR) |
товару немає в наявності |
Мінімальне замовлення: 2500 шт В кошику од. на суму грн. | ||||||||||||||||
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FAN3227CMX-F085 | onsemi |
Description: IC GATE DRVR LOW-SIDE 8SOICQualification: AEC-Q100 DigiKey Programmable: Not Verified Grade: Automotive Current - Peak Output (Source, Sink): 3A, 3A Driven Configuration: Low-Side Channel Type: Independent Rise / Fall Time (Typ): 12ns, 9ns Supplier Device Package: 8-SOIC Input Type: Non-Inverting Voltage - Supply: 4.5V ~ 18V Operating Temperature: -40°C ~ 125°C (TA) Mounting Type: Surface Mount Package / Case: 8-SOIC (0.154", 3.90mm Width) Packaging: Tape & Reel (TR) Gate Type: N-Channel MOSFET Number of Drivers: 2 |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||||||||||
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FAN3228CMX-F085 | onsemi |
Description: IC GATE DRVR LOW-SIDE 8SOICQualification: AEC-Q100 DigiKey Programmable: Not Verified Grade: Automotive Current - Peak Output (Source, Sink): 3A, 3A Gate Type: N-Channel MOSFET Number of Drivers: 2 Driven Configuration: Low-Side Channel Type: Independent Rise / Fall Time (Typ): 12ns, 9ns Supplier Device Package: 8-SOIC Input Type: Inverting, Non-Inverting Voltage - Supply: 4.5V ~ 18V Operating Temperature: -40°C ~ 125°C (TA) Mounting Type: Surface Mount Package / Case: 8-SOIC (0.154", 3.90mm Width) Packaging: Tape & Reel (TR) |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||||||||||
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FAN6757MRMX | onsemi |
Description: IC OFFLINE SWITCH FLYBACK 8SOICPart Status: Obsolete Voltage - Start Up: 17 V Fault Protection: Current Limiting, Open Loop, Over Temperature, Over Voltage, Short Circuit Supplier Device Package: 8-SOIC Voltage - Supply (Vcc/Vdd): 11V ~ 30V Topology: Flyback Output Isolation: Isolated Internal Switch(s): No Frequency - Switching: 65kHz Duty Cycle: 82.5% Operating Temperature: -40°C ~ 105°C (TA) Mounting Type: Surface Mount Package / Case: 8-SOIC (0.154", 3.90mm Width) Packaging: Tape & Reel (TR) |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||||||||||
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FAN6921AMLMY | onsemi |
Description: IC OFFLINE SWITCH FLYBACK 16SOICPart Status: Obsolete Voltage - Start Up: 18 V Fault Protection: Current Limiting, Open Loop, Over Load, Over Power, Over Temperature, Over Voltage, Short Circuit Supplier Device Package: 16-SOIC Voltage - Supply (Vcc/Vdd): 7.5V ~ 25V Topology: Flyback Output Isolation: Isolated Internal Switch(s): No Operating Temperature: -40°C ~ 105°C (TA) Mounting Type: Surface Mount Package / Case: 16-SOIC (0.154", 3.90mm Width) Packaging: Tape & Reel (TR) |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||||||||||
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FCD620N60ZF | onsemi |
Description: MOSFET N-CH 600V 7.3A DPAKPackaging: Tape & Reel (TR) Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63 Mounting Type: Surface Mount Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 7.3A (Tc) Rds On (Max) @ Id, Vgs: 620mOhm @ 3.6A, 10V Power Dissipation (Max): 89W (Tc) Vgs(th) (Max) @ Id: 5V @ 250µA Supplier Device Package: TO-252AA Part Status: Not For New Designs Drive Voltage (Max Rds On, Min Rds On): 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 600 V Gate Charge (Qg) (Max) @ Vgs: 36 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 1135 pF @ 25 V |
на замовлення 11800 шт: термін постачання 21-31 дні (днів) |
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FCD900N60Z | onsemi |
Description: MOSFET N-CH 600V 4.5A TO252Input Capacitance (Ciss) (Max) @ Vds: 720 pF @ 25 V Gate Charge (Qg) (Max) @ Vgs: 17 nC @ 10 V Drain to Source Voltage (Vdss): 600 V Vgs (Max): ±20V Drive Voltage (Max Rds On, Min Rds On): 10V Supplier Device Package: TO-252AA Vgs(th) (Max) @ Id: 3.5V @ 250µA Power Dissipation (Max): 52W (Tc) Rds On (Max) @ Id, Vgs: 900mOhm @ 2.3A, 10V Current - Continuous Drain (Id) @ 25°C: 4.5A (Tc) FET Type: N-Channel Technology: MOSFET (Metal Oxide) Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Surface Mount Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63 Packaging: Tape & Reel (TR) |
на замовлення 10000 шт: термін постачання 21-31 дні (днів) |
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FDB8132_F085 | onsemi |
Description: MOSFET N-CH 30V 80A D2PAKPackaging: Tape & Reel (TR) Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB Mounting Type: Surface Mount Operating Temperature: -55°C ~ 175°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 80A (Tc) Rds On (Max) @ Id, Vgs: 1.6mOhm @ 80A, 10V Power Dissipation (Max): 341W (Tc) Vgs(th) (Max) @ Id: 4V @ 250µA Supplier Device Package: TO-263 (D2Pak) Grade: Automotive Drive Voltage (Max Rds On, Min Rds On): 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 30 V Gate Charge (Qg) (Max) @ Vgs: 350 nC @ 13 V Input Capacitance (Ciss) (Max) @ Vds: 14100 pF @ 15 V Qualification: AEC-Q101 |
товару немає в наявності |
Мінімальне замовлення: 800 шт В кошику од. на суму грн. |
| FXMHD103UMX |
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Виробник: onsemi
Description: IC INTERFACE SPECIALIZED 12UMLP
Supplier Device Package: 12-UMLP (1.8x1.8)
Applications: Cell Phones, Digital Cameras, Media Players
Voltage - Supply: 1.6V ~ 3.6V
Mounting Type: Surface Mount
Package / Case: 12-UFQFN
Packaging: Cut Tape (CT)
Description: IC INTERFACE SPECIALIZED 12UMLP
Supplier Device Package: 12-UMLP (1.8x1.8)
Applications: Cell Phones, Digital Cameras, Media Players
Voltage - Supply: 1.6V ~ 3.6V
Mounting Type: Surface Mount
Package / Case: 12-UFQFN
Packaging: Cut Tape (CT)
товару немає в наявності
В кошику
од. на суму грн.
| FXL6408UMX |
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Виробник: onsemi
Description: IC XPNDR 400KHZ I2C 16UMLP
Packaging: Cut Tape (CT)
Features: POR
Package / Case: 16-UFQFN
Output Type: Open Drain
Mounting Type: Surface Mount
Interface: I2C
Number of I/O: 8
Operating Temperature: -40°C ~ 85°C
Voltage - Supply: 1.65V ~ 4V
Clock Frequency: 400 kHz
Interrupt Output: Yes
Supplier Device Package: 16-UMLP (1.8x2.6)
Current - Output Source/Sink: 6mA
Part Status: Active
DigiKey Programmable: Not Verified
Description: IC XPNDR 400KHZ I2C 16UMLP
Packaging: Cut Tape (CT)
Features: POR
Package / Case: 16-UFQFN
Output Type: Open Drain
Mounting Type: Surface Mount
Interface: I2C
Number of I/O: 8
Operating Temperature: -40°C ~ 85°C
Voltage - Supply: 1.65V ~ 4V
Clock Frequency: 400 kHz
Interrupt Output: Yes
Supplier Device Package: 16-UMLP (1.8x2.6)
Current - Output Source/Sink: 6mA
Part Status: Active
DigiKey Programmable: Not Verified
на замовлення 10691 шт:
термін постачання 21-31 дні (днів)
| Кількість | Ціна без ПДВ |
|---|---|
| 8+ | 40.76 грн |
| 11+ | 27.47 грн |
| 25+ | 24.55 грн |
| 100+ | 20.08 грн |
| 250+ | 18.67 грн |
| 500+ | 17.81 грн |
| 1000+ | 16.83 грн |
| 2500+ | 16.58 грн |
| FDMS86101A |
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Виробник: onsemi
Description: MOSFET N-CH 100V 13A/60A 8PQFN
Packaging: Cut Tape (CT)
Package / Case: 8-PowerTDFN
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 13A (Ta), 60A (Tc)
Rds On (Max) @ Id, Vgs: 8mOhm @ 13A, 10V
Power Dissipation (Max): 2.5W (Ta), 104W (Tc)
Vgs(th) (Max) @ Id: 4V @ 250µA
Supplier Device Package: 8-PQFN (5x6)
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 6V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 100 V
Gate Charge (Qg) (Max) @ Vgs: 58 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 4120 pF @ 50 V
Description: MOSFET N-CH 100V 13A/60A 8PQFN
Packaging: Cut Tape (CT)
Package / Case: 8-PowerTDFN
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 13A (Ta), 60A (Tc)
Rds On (Max) @ Id, Vgs: 8mOhm @ 13A, 10V
Power Dissipation (Max): 2.5W (Ta), 104W (Tc)
Vgs(th) (Max) @ Id: 4V @ 250µA
Supplier Device Package: 8-PQFN (5x6)
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 6V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 100 V
Gate Charge (Qg) (Max) @ Vgs: 58 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 4120 pF @ 50 V
на замовлення 1169 шт:
термін постачання 21-31 дні (днів)
| Кількість | Ціна без ПДВ |
|---|---|
| 2+ | 308.04 грн |
| 10+ | 195.72 грн |
| 100+ | 138.11 грн |
| 500+ | 110.54 грн |
| FAN53600AUC33X |
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Виробник: onsemi
Description: IC REG BUCK 3.3V 600MA 6WLCSP
Part Status: Last Time Buy
Voltage - Output (Min/Fixed): 3.3V
Voltage - Input (Min): 2.3V
Synchronous Rectifier: Yes
Supplier Device Package: 6-WLCSP (1.23x0.88)
Topology: Buck
Voltage - Input (Max): 5.5V
Frequency - Switching: 3MHz
Output Configuration: Positive
Operating Temperature: -40°C ~ 85°C (TA)
Current - Output: 600mA
Function: Step-Down
Number of Outputs: 1
Mounting Type: Surface Mount
Output Type: Fixed
Package / Case: 6-UFBGA, WLCSP
Packaging: Cut Tape (CT)
Description: IC REG BUCK 3.3V 600MA 6WLCSP
Part Status: Last Time Buy
Voltage - Output (Min/Fixed): 3.3V
Voltage - Input (Min): 2.3V
Synchronous Rectifier: Yes
Supplier Device Package: 6-WLCSP (1.23x0.88)
Topology: Buck
Voltage - Input (Max): 5.5V
Frequency - Switching: 3MHz
Output Configuration: Positive
Operating Temperature: -40°C ~ 85°C (TA)
Current - Output: 600mA
Function: Step-Down
Number of Outputs: 1
Mounting Type: Surface Mount
Output Type: Fixed
Package / Case: 6-UFBGA, WLCSP
Packaging: Cut Tape (CT)
на замовлення 6200 шт:
термін постачання 21-31 дні (днів)
| Кількість | Ціна без ПДВ |
|---|---|
| 3+ | 123.84 грн |
| 10+ | 73.74 грн |
| 25+ | 61.71 грн |
| 100+ | 45.23 грн |
| 250+ | 38.99 грн |
| 500+ | 35.15 грн |
| 1000+ | 31.42 грн |
| FAN3227TMX-F085 |
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Виробник: onsemi
Description: IC GATE DRVR LOW-SIDE 8SOIC
DigiKey Programmable: Not Verified
Qualification: AEC-Q100
Grade: Automotive
Logic Voltage - VIL, VIH: 0.8V, 2V
Gate Type: MOSFET (N-Channel)
Number of Drivers: 2
Driven Configuration: Low-Side
Channel Type: Independent
Rise / Fall Time (Typ): 12ns, 9ns
Supplier Device Package: 8-SOIC
Input Type: Non-Inverting
Voltage - Supply: 4.5V ~ 18V
Operating Temperature: -40°C ~ 125°C (TA)
Mounting Type: Surface Mount
Package / Case: 8-SOIC (0.154", 3.90mm Width)
Packaging: Cut Tape (CT)
Part Status: Active
Current - Peak Output (Source, Sink): 3A, 3A
Description: IC GATE DRVR LOW-SIDE 8SOIC
DigiKey Programmable: Not Verified
Qualification: AEC-Q100
Grade: Automotive
Logic Voltage - VIL, VIH: 0.8V, 2V
Gate Type: MOSFET (N-Channel)
Number of Drivers: 2
Driven Configuration: Low-Side
Channel Type: Independent
Rise / Fall Time (Typ): 12ns, 9ns
Supplier Device Package: 8-SOIC
Input Type: Non-Inverting
Voltage - Supply: 4.5V ~ 18V
Operating Temperature: -40°C ~ 125°C (TA)
Mounting Type: Surface Mount
Package / Case: 8-SOIC (0.154", 3.90mm Width)
Packaging: Cut Tape (CT)
Part Status: Active
Current - Peak Output (Source, Sink): 3A, 3A
на замовлення 12240 шт:
термін постачання 21-31 дні (днів)
| Кількість | Ціна без ПДВ |
|---|---|
| 3+ | 105.03 грн |
| 10+ | 74.12 грн |
| 25+ | 67.24 грн |
| 100+ | 56.02 грн |
| 250+ | 52.64 грн |
| 500+ | 50.60 грн |
| 1000+ | 49.27 грн |
| FDMC86260 |
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Виробник: onsemi
Description: MOSFET N CH 150V 5.4A POWER 33
Packaging: Cut Tape (CT)
Package / Case: 8-PowerWDFN
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 5.4A (Ta), 16A (Tc)
Rds On (Max) @ Id, Vgs: 34mOhm @ 5.4A, 10V
Power Dissipation (Max): 2.3W (Ta), 54W (Tc)
Vgs(th) (Max) @ Id: 4V @ 250µA
Supplier Device Package: Power33
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 6V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 150 V
Gate Charge (Qg) (Max) @ Vgs: 21 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 1330 pF @ 75 V
Description: MOSFET N CH 150V 5.4A POWER 33
Packaging: Cut Tape (CT)
Package / Case: 8-PowerWDFN
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 5.4A (Ta), 16A (Tc)
Rds On (Max) @ Id, Vgs: 34mOhm @ 5.4A, 10V
Power Dissipation (Max): 2.3W (Ta), 54W (Tc)
Vgs(th) (Max) @ Id: 4V @ 250µA
Supplier Device Package: Power33
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 6V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 150 V
Gate Charge (Qg) (Max) @ Vgs: 21 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 1330 pF @ 75 V
на замовлення 1527 шт:
термін постачання 21-31 дні (днів)
| Кількість | Ціна без ПДВ |
|---|---|
| 2+ | 242.20 грн |
| 10+ | 152.24 грн |
| 100+ | 105.96 грн |
| 500+ | 80.89 грн |
| 1000+ | 80.08 грн |
| FOD8160R2 |
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Виробник: onsemi
Description: OPTOISO 5KV OPEN COLLECTOR 5SOP
Current - Output / Channel: 50 mA
Number of Channels: 1
Propagation Delay tpLH / tpHL (Max): 90ns, 80ns
Common Mode Transient Immunity (Min): 20kV/µs
Rise / Fall Time (Typ): 22ns, 9ns
Supplier Device Package: 5-SOP
Inputs - Side 1/Side 2: 1/0
Current - DC Forward (If) (Max): 25mA
Voltage - Isolation: 5000Vrms
Input Type: DC
Data Rate: 10Mbps
Voltage - Forward (Vf) (Typ): 1.45V
Voltage - Supply: 3V ~ 5.5V
Operating Temperature: -40°C ~ 100°C
Mounting Type: Surface Mount
Output Type: Open Collector, Schottky Clamped
Package / Case: 6-SOIC (0.362", 9.20mm Width), 5 Leads
Packaging: Cut Tape (CT)
Description: OPTOISO 5KV OPEN COLLECTOR 5SOP
Current - Output / Channel: 50 mA
Number of Channels: 1
Propagation Delay tpLH / tpHL (Max): 90ns, 80ns
Common Mode Transient Immunity (Min): 20kV/µs
Rise / Fall Time (Typ): 22ns, 9ns
Supplier Device Package: 5-SOP
Inputs - Side 1/Side 2: 1/0
Current - DC Forward (If) (Max): 25mA
Voltage - Isolation: 5000Vrms
Input Type: DC
Data Rate: 10Mbps
Voltage - Forward (Vf) (Typ): 1.45V
Voltage - Supply: 3V ~ 5.5V
Operating Temperature: -40°C ~ 100°C
Mounting Type: Surface Mount
Output Type: Open Collector, Schottky Clamped
Package / Case: 6-SOIC (0.362", 9.20mm Width), 5 Leads
Packaging: Cut Tape (CT)
на замовлення 1000 шт:
термін постачання 21-31 дні (днів)
| Кількість | Ціна без ПДВ |
|---|---|
| 1+ | 315.88 грн |
| 10+ | 207.34 грн |
| 100+ | 157.87 грн |
| 500+ | 129.81 грн |
| 6N137SDVM |
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Виробник: onsemi
Description: OPTOISOLTR 5KV OPEN COLL 8-SMD
Packaging: Cut Tape (CT)
Package / Case: 8-SMD, Gull Wing
Output Type: Open Collector
Mounting Type: Surface Mount
Operating Temperature: -40°C ~ 100°C
Voltage - Supply: 4.5V ~ 5.5V
Voltage - Forward (Vf) (Typ): 1.45V
Data Rate: 10Mbps
Input Type: DC
Voltage - Isolation: 5000Vrms
Current - DC Forward (If) (Max): 50mA
Inputs - Side 1/Side 2: 1/0
Supplier Device Package: 8-SMD
Rise / Fall Time (Typ): 30ns, 10ns
Common Mode Transient Immunity (Min): 10kV/µs (Typ)
Propagation Delay tpLH / tpHL (Max): 75ns, 75ns
Part Status: Active
Number of Channels: 1
Current - Output / Channel: 50 mA
Description: OPTOISOLTR 5KV OPEN COLL 8-SMD
Packaging: Cut Tape (CT)
Package / Case: 8-SMD, Gull Wing
Output Type: Open Collector
Mounting Type: Surface Mount
Operating Temperature: -40°C ~ 100°C
Voltage - Supply: 4.5V ~ 5.5V
Voltage - Forward (Vf) (Typ): 1.45V
Data Rate: 10Mbps
Input Type: DC
Voltage - Isolation: 5000Vrms
Current - DC Forward (If) (Max): 50mA
Inputs - Side 1/Side 2: 1/0
Supplier Device Package: 8-SMD
Rise / Fall Time (Typ): 30ns, 10ns
Common Mode Transient Immunity (Min): 10kV/µs (Typ)
Propagation Delay tpLH / tpHL (Max): 75ns, 75ns
Part Status: Active
Number of Channels: 1
Current - Output / Channel: 50 mA
на замовлення 960 шт:
термін постачання 21-31 дні (днів)
| Кількість | Ціна без ПДВ |
|---|---|
| 3+ | 109.73 грн |
| 10+ | 74.72 грн |
| 100+ | 56.28 грн |
| 500+ | 45.16 грн |
| FDMB2308PZ |
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Виробник: onsemi
Description: MOSFET 2P-CH 6MLP
Packaging: Cut Tape (CT)
Package / Case: 6-WDFN Exposed Pad
Mounting Type: Surface Mount
Configuration: 2 P-Channel (Dual) Common Drain
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
Power - Max: 800mW
Input Capacitance (Ciss) (Max) @ Vds: 3030pF @ 10V
Rds On (Max) @ Id, Vgs: 36mOhm @ 5.7A, 4.5V
Gate Charge (Qg) (Max) @ Vgs: 30nC @ 10V
FET Feature: Logic Level Gate
Vgs(th) (Max) @ Id: 1.5V @ 250µA
Supplier Device Package: 6-MLP (2x3)
Part Status: Active
Description: MOSFET 2P-CH 6MLP
Packaging: Cut Tape (CT)
Package / Case: 6-WDFN Exposed Pad
Mounting Type: Surface Mount
Configuration: 2 P-Channel (Dual) Common Drain
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
Power - Max: 800mW
Input Capacitance (Ciss) (Max) @ Vds: 3030pF @ 10V
Rds On (Max) @ Id, Vgs: 36mOhm @ 5.7A, 4.5V
Gate Charge (Qg) (Max) @ Vgs: 30nC @ 10V
FET Feature: Logic Level Gate
Vgs(th) (Max) @ Id: 1.5V @ 250µA
Supplier Device Package: 6-MLP (2x3)
Part Status: Active
на замовлення 2944 шт:
термін постачання 21-31 дні (днів)
| Кількість | Ціна без ПДВ |
|---|---|
| 2+ | 187.33 грн |
| 10+ | 116.69 грн |
| 100+ | 80.36 грн |
| 500+ | 61.93 грн |
| FDMS86152 |
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Виробник: onsemi
Description: MOSFET N-CH 100V 14A/45A POWER56
Vgs (Max): ±20V
Drive Voltage (Max Rds On, Min Rds On): 6V, 10V
Part Status: Active
Supplier Device Package: 8-PQFN (5x6)
Vgs(th) (Max) @ Id: 4V @ 250µA
Power Dissipation (Max): 2.7W (Ta), 125W (Tc)
Rds On (Max) @ Id, Vgs: 6mOhm @ 14A, 10V
Current - Continuous Drain (Id) @ 25°C: 14A (Ta), 45A (Tc)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: 8-PowerTDFN
Packaging: Cut Tape (CT)
Input Capacitance (Ciss) (Max) @ Vds: 3370 pF @ 50 V
Gate Charge (Qg) (Max) @ Vgs: 50 nC @ 10 V
Drain to Source Voltage (Vdss): 100 V
Description: MOSFET N-CH 100V 14A/45A POWER56
Vgs (Max): ±20V
Drive Voltage (Max Rds On, Min Rds On): 6V, 10V
Part Status: Active
Supplier Device Package: 8-PQFN (5x6)
Vgs(th) (Max) @ Id: 4V @ 250µA
Power Dissipation (Max): 2.7W (Ta), 125W (Tc)
Rds On (Max) @ Id, Vgs: 6mOhm @ 14A, 10V
Current - Continuous Drain (Id) @ 25°C: 14A (Ta), 45A (Tc)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: 8-PowerTDFN
Packaging: Cut Tape (CT)
Input Capacitance (Ciss) (Max) @ Vds: 3370 pF @ 50 V
Gate Charge (Qg) (Max) @ Vgs: 50 nC @ 10 V
Drain to Source Voltage (Vdss): 100 V
на замовлення 13963 шт:
термін постачання 21-31 дні (днів)
| Кількість | Ціна без ПДВ |
|---|---|
| 1+ | 399.75 грн |
| 10+ | 257.38 грн |
| 100+ | 185.25 грн |
| 500+ | 171.12 грн |
| FODM8801CR2 |
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Виробник: onsemi
Description: OPTOISO 3.75KV TRANS 4-MINI-FLAT
Packaging: Cut Tape (CT)
Package / Case: 4-SOIC (0.173", 4.40mm Width)
Output Type: Transistor
Mounting Type: Surface Mount
Operating Temperature: -40°C ~ 125°C
Voltage - Forward (Vf) (Typ): 1.35V
Input Type: DC
Current - Output / Channel: 30mA
Voltage - Isolation: 3750Vrms
Current Transfer Ratio (Min): 200% @ 1mA
Vce Saturation (Max): 400mV
Current Transfer Ratio (Max): 400% @ 1mA
Supplier Device Package: 4-Mini-Flat
Voltage - Output (Max): 75V
Turn On / Turn Off Time (Typ): 6µs, 6µs
Rise / Fall Time (Typ): 5µs, 5.5µs
Number of Channels: 1
Current - DC Forward (If) (Max): 20 mA
Description: OPTOISO 3.75KV TRANS 4-MINI-FLAT
Packaging: Cut Tape (CT)
Package / Case: 4-SOIC (0.173", 4.40mm Width)
Output Type: Transistor
Mounting Type: Surface Mount
Operating Temperature: -40°C ~ 125°C
Voltage - Forward (Vf) (Typ): 1.35V
Input Type: DC
Current - Output / Channel: 30mA
Voltage - Isolation: 3750Vrms
Current Transfer Ratio (Min): 200% @ 1mA
Vce Saturation (Max): 400mV
Current Transfer Ratio (Max): 400% @ 1mA
Supplier Device Package: 4-Mini-Flat
Voltage - Output (Max): 75V
Turn On / Turn Off Time (Typ): 6µs, 6µs
Rise / Fall Time (Typ): 5µs, 5.5µs
Number of Channels: 1
Current - DC Forward (If) (Max): 20 mA
на замовлення 131 шт:
термін постачання 21-31 дні (днів)
| Кількість | Ціна без ПДВ |
|---|---|
| 3+ | 115.22 грн |
| 10+ | 79.03 грн |
| 100+ | 59.70 грн |
| FDB390N15A |
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Виробник: onsemi
Description: MOSFET N-CH 150V 27A D2PAK
Input Capacitance (Ciss) (Max) @ Vds: 1285 pF @ 75 V
Gate Charge (Qg) (Max) @ Vgs: 18.6 nC @ 10 V
Drain to Source Voltage (Vdss): 150 V
Vgs (Max): ±20V
Rds On (Max) @ Id, Vgs: 39mOhm @ 27A, 10V
Current - Continuous Drain (Id) @ 25°C: 27A (Tc)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 175°C (TJ)
Mounting Type: Surface Mount
Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
Packaging: Cut Tape (CT)
Drive Voltage (Max Rds On, Min Rds On): 10V
Part Status: Active
Supplier Device Package: TO-263 (D2Pak)
Vgs(th) (Max) @ Id: 4V @ 250µA
Power Dissipation (Max): 75W (Tc)
Description: MOSFET N-CH 150V 27A D2PAK
Input Capacitance (Ciss) (Max) @ Vds: 1285 pF @ 75 V
Gate Charge (Qg) (Max) @ Vgs: 18.6 nC @ 10 V
Drain to Source Voltage (Vdss): 150 V
Vgs (Max): ±20V
Rds On (Max) @ Id, Vgs: 39mOhm @ 27A, 10V
Current - Continuous Drain (Id) @ 25°C: 27A (Tc)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 175°C (TJ)
Mounting Type: Surface Mount
Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
Packaging: Cut Tape (CT)
Drive Voltage (Max Rds On, Min Rds On): 10V
Part Status: Active
Supplier Device Package: TO-263 (D2Pak)
Vgs(th) (Max) @ Id: 4V @ 250µA
Power Dissipation (Max): 75W (Tc)
на замовлення 1818 шт:
термін постачання 21-31 дні (днів)
| Кількість | Ціна без ПДВ |
|---|---|
| 2+ | 219.47 грн |
| 10+ | 137.37 грн |
| 100+ | 94.94 грн |
| FDMS3606AS |
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Виробник: onsemi
Description: MOSFET 2N-CH 30V 13A/27A POWER56
Current - Continuous Drain (Id) @ 25°C: 13A, 27A
Drain to Source Voltage (Vdss): 30V
Power - Max: 1W
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 150°C (TJ)
Configuration: 2 N-Channel (Dual) Asymmetrical
Mounting Type: Surface Mount
Package / Case: 8-PowerTDFN
Packaging: Cut Tape (CT)
Supplier Device Package: Power56
Vgs(th) (Max) @ Id: 2.7V @ 250µA
FET Feature: Logic Level Gate
Gate Charge (Qg) (Max) @ Vgs: 29nC @ 10V
Rds On (Max) @ Id, Vgs: 8mOhm @ 13A, 10V
Input Capacitance (Ciss) (Max) @ Vds: 1695pF @ 15V
Description: MOSFET 2N-CH 30V 13A/27A POWER56
Current - Continuous Drain (Id) @ 25°C: 13A, 27A
Drain to Source Voltage (Vdss): 30V
Power - Max: 1W
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 150°C (TJ)
Configuration: 2 N-Channel (Dual) Asymmetrical
Mounting Type: Surface Mount
Package / Case: 8-PowerTDFN
Packaging: Cut Tape (CT)
Supplier Device Package: Power56
Vgs(th) (Max) @ Id: 2.7V @ 250µA
FET Feature: Logic Level Gate
Gate Charge (Qg) (Max) @ Vgs: 29nC @ 10V
Rds On (Max) @ Id, Vgs: 8mOhm @ 13A, 10V
Input Capacitance (Ciss) (Max) @ Vds: 1695pF @ 15V
товару немає в наявності
В кошику
од. на суму грн.
| FSA2866UMX |
Виробник: onsemi
Description: IC ANALOG SWITCH 20UMLP
Number of Channels: 1
Multiplexer/Demultiplexer Circuit: 2:2
Voltage - Supply, Single (V+): 1.65V ~ 4.3V
-3db Bandwidth: 210MHz
On-State Resistance (Max): 3.5Ohm
Applications: Telecommunications
Operating Temperature: -40°C ~ 85°C (TA)
Mounting Type: Surface Mount
Package / Case: 20-UFQFN Exposed Pad
Features: Break-Before-Make
Packaging: Cut Tape (CT)
Supplier Device Package: 20-UMLP (3x3)
Description: IC ANALOG SWITCH 20UMLP
Number of Channels: 1
Multiplexer/Demultiplexer Circuit: 2:2
Voltage - Supply, Single (V+): 1.65V ~ 4.3V
-3db Bandwidth: 210MHz
On-State Resistance (Max): 3.5Ohm
Applications: Telecommunications
Operating Temperature: -40°C ~ 85°C (TA)
Mounting Type: Surface Mount
Package / Case: 20-UFQFN Exposed Pad
Features: Break-Before-Make
Packaging: Cut Tape (CT)
Supplier Device Package: 20-UMLP (3x3)
на замовлення 31 шт:
термін постачання 21-31 дні (днів)
| Кількість | Ціна без ПДВ |
|---|---|
| 5+ | 77.60 грн |
| 10+ | 67.18 грн |
| 25+ | 63.76 грн |
| FOD3182TSR2V |
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Виробник: onsemi
Description: OPTOISO 5KV 1CH GATE DVR 8SMD
Voltage - Output Supply: 10V ~ 30V
Current - DC Forward (If) (Max): 25 mA
Number of Channels: 1
Part Status: Active
Pulse Width Distortion (Max): 65ns
Propagation Delay tpLH / tpHL (Max): 210ns, 210ns
Common Mode Transient Immunity (Min): 35kV/µs
Rise / Fall Time (Typ): 38ns, 24ns
Supplier Device Package: 8-SMD
Approval Agency: UL, VDE
Voltage - Isolation: 5000Vrms
Current - Output High, Low: 2.5A, 2.5A
Technology: Optical Coupling
Current - Peak Output: 3A
Voltage - Forward (Vf) (Typ): 1.43V
Operating Temperature: -40°C ~ 100°C
Mounting Type: Surface Mount
Package / Case: 8-SMD, Gull Wing
Packaging: Cut Tape (CT)
Description: OPTOISO 5KV 1CH GATE DVR 8SMD
Voltage - Output Supply: 10V ~ 30V
Current - DC Forward (If) (Max): 25 mA
Number of Channels: 1
Part Status: Active
Pulse Width Distortion (Max): 65ns
Propagation Delay tpLH / tpHL (Max): 210ns, 210ns
Common Mode Transient Immunity (Min): 35kV/µs
Rise / Fall Time (Typ): 38ns, 24ns
Supplier Device Package: 8-SMD
Approval Agency: UL, VDE
Voltage - Isolation: 5000Vrms
Current - Output High, Low: 2.5A, 2.5A
Technology: Optical Coupling
Current - Peak Output: 3A
Voltage - Forward (Vf) (Typ): 1.43V
Operating Temperature: -40°C ~ 100°C
Mounting Type: Surface Mount
Package / Case: 8-SMD, Gull Wing
Packaging: Cut Tape (CT)
на замовлення 730 шт:
термін постачання 21-31 дні (днів)
| Кількість | Ціна без ПДВ |
|---|---|
| 2+ | 223.39 грн |
| 10+ | 157.22 грн |
| 100+ | 122.89 грн |
| FODM8801BR2 |
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Виробник: onsemi
Description: OPTOISO 3.75KV TRANS 4-MINI-FLAT
Mounting Type: Surface Mount
Output Type: Transistor
Package / Case: 4-SOIC (0.173", 4.40mm Width)
Packaging: Cut Tape (CT)
Current - DC Forward (If) (Max): 20 mA
Number of Channels: 1
Rise / Fall Time (Typ): 5µs, 5.5µs
Turn On / Turn Off Time (Typ): 6µs, 6µs
Voltage - Output (Max): 75V
Supplier Device Package: 4-Mini-Flat
Current Transfer Ratio (Max): 260% @ 1mA
Vce Saturation (Max): 400mV
Current Transfer Ratio (Min): 130% @ 1mA
Voltage - Isolation: 3750Vrms
Current - Output / Channel: 30mA
Input Type: DC
Voltage - Forward (Vf) (Typ): 1.35V
Operating Temperature: -40°C ~ 125°C
Description: OPTOISO 3.75KV TRANS 4-MINI-FLAT
Mounting Type: Surface Mount
Output Type: Transistor
Package / Case: 4-SOIC (0.173", 4.40mm Width)
Packaging: Cut Tape (CT)
Current - DC Forward (If) (Max): 20 mA
Number of Channels: 1
Rise / Fall Time (Typ): 5µs, 5.5µs
Turn On / Turn Off Time (Typ): 6µs, 6µs
Voltage - Output (Max): 75V
Supplier Device Package: 4-Mini-Flat
Current Transfer Ratio (Max): 260% @ 1mA
Vce Saturation (Max): 400mV
Current Transfer Ratio (Min): 130% @ 1mA
Voltage - Isolation: 3750Vrms
Current - Output / Channel: 30mA
Input Type: DC
Voltage - Forward (Vf) (Typ): 1.35V
Operating Temperature: -40°C ~ 125°C
на замовлення 1517086 шт:
термін постачання 21-31 дні (днів)
| Кількість | Ціна без ПДВ |
|---|---|
| 3+ | 105.81 грн |
| 10+ | 72.38 грн |
| 100+ | 54.59 грн |
| 500+ | 43.84 грн |
| 1000+ | 41.43 грн |
| FODM8801AR2 |
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Виробник: onsemi
Description: OPTOISO 3.75KV TRANS 4-MINI-FLAT
Packaging: Cut Tape (CT)
Current - DC Forward (If) (Max): 20 mA
Number of Channels: 1
Rise / Fall Time (Typ): 5µs, 5.5µs
Turn On / Turn Off Time (Typ): 6µs, 6µs
Voltage - Output (Max): 75V
Supplier Device Package: 4-Mini-Flat
Current Transfer Ratio (Max): 160% @ 1mA
Vce Saturation (Max): 400mV
Current Transfer Ratio (Min): 80% @ 1mA
Voltage - Isolation: 3750Vrms
Current - Output / Channel: 30mA
Input Type: DC
Voltage - Forward (Vf) (Typ): 1.35V
Operating Temperature: -40°C ~ 125°C
Mounting Type: Surface Mount
Output Type: Transistor
Package / Case: 4-SOIC (0.173", 4.40mm Width)
Description: OPTOISO 3.75KV TRANS 4-MINI-FLAT
Packaging: Cut Tape (CT)
Current - DC Forward (If) (Max): 20 mA
Number of Channels: 1
Rise / Fall Time (Typ): 5µs, 5.5µs
Turn On / Turn Off Time (Typ): 6µs, 6µs
Voltage - Output (Max): 75V
Supplier Device Package: 4-Mini-Flat
Current Transfer Ratio (Max): 160% @ 1mA
Vce Saturation (Max): 400mV
Current Transfer Ratio (Min): 80% @ 1mA
Voltage - Isolation: 3750Vrms
Current - Output / Channel: 30mA
Input Type: DC
Voltage - Forward (Vf) (Typ): 1.35V
Operating Temperature: -40°C ~ 125°C
Mounting Type: Surface Mount
Output Type: Transistor
Package / Case: 4-SOIC (0.173", 4.40mm Width)
на замовлення 131682 шт:
термін постачання 21-31 дні (днів)
| Кількість | Ціна без ПДВ |
|---|---|
| 3+ | 112.09 грн |
| 10+ | 76.84 грн |
| 100+ | 58.11 грн |
| 500+ | 46.77 грн |
| 1000+ | 44.24 грн |
| FXLP4555MPX |
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Виробник: onsemi
Description: IC XLTR VL BIDIR 16-MLP
Packaging: Cut Tape (CT)
Features: SIM Card Interface
Package / Case: 16-WFQFN Exposed Pad
Output Type: Tri-State, Non-Inverted
Mounting Type: Surface Mount
Operating Temperature: -40°C ~ 85°C (TA)
Supplier Device Package: 16-MLP (3x3)
Channel Type: Bidirectional
Translator Type: Voltage Level
Channels per Circuit: 1
Voltage - VCCA: 1.65 V ~ 5.5 V
Voltage - VCCB: 1.7 V ~ 3.2 V
Number of Circuits: 1
Description: IC XLTR VL BIDIR 16-MLP
Packaging: Cut Tape (CT)
Features: SIM Card Interface
Package / Case: 16-WFQFN Exposed Pad
Output Type: Tri-State, Non-Inverted
Mounting Type: Surface Mount
Operating Temperature: -40°C ~ 85°C (TA)
Supplier Device Package: 16-MLP (3x3)
Channel Type: Bidirectional
Translator Type: Voltage Level
Channels per Circuit: 1
Voltage - VCCA: 1.65 V ~ 5.5 V
Voltage - VCCB: 1.7 V ~ 3.2 V
Number of Circuits: 1
на замовлення 6619 шт:
термін постачання 21-31 дні (днів)
| Кількість | Ціна без ПДВ |
|---|---|
| 10+ | 34.49 грн |
| 13+ | 23.40 грн |
| 25+ | 20.95 грн |
| 100+ | 17.09 грн |
| 250+ | 15.86 грн |
| 500+ | 15.12 грн |
| 1000+ | 14.41 грн |
| FOD3182SD |
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Виробник: onsemi
Description: OPTOISO 5KV 1CH GATE DVR 8SMD
Voltage - Output Supply: 10V ~ 30V
Current - DC Forward (If) (Max): 25 mA
Number of Channels: 1
Part Status: Active
Pulse Width Distortion (Max): 65ns
Propagation Delay tpLH / tpHL (Max): 210ns, 210ns
Common Mode Transient Immunity (Min): 35kV/µs
Rise / Fall Time (Typ): 38ns, 24ns
Supplier Device Package: 8-SMD
Approval Agency: UL
Voltage - Isolation: 5000Vrms
Current - Output High, Low: 2.5A, 2.5A
Technology: Optical Coupling
Current - Peak Output: 3A
Voltage - Forward (Vf) (Typ): 1.43V
Operating Temperature: -40°C ~ 100°C
Mounting Type: Surface Mount
Package / Case: 8-SMD, Gull Wing
Packaging: Cut Tape (CT)
Description: OPTOISO 5KV 1CH GATE DVR 8SMD
Voltage - Output Supply: 10V ~ 30V
Current - DC Forward (If) (Max): 25 mA
Number of Channels: 1
Part Status: Active
Pulse Width Distortion (Max): 65ns
Propagation Delay tpLH / tpHL (Max): 210ns, 210ns
Common Mode Transient Immunity (Min): 35kV/µs
Rise / Fall Time (Typ): 38ns, 24ns
Supplier Device Package: 8-SMD
Approval Agency: UL
Voltage - Isolation: 5000Vrms
Current - Output High, Low: 2.5A, 2.5A
Technology: Optical Coupling
Current - Peak Output: 3A
Voltage - Forward (Vf) (Typ): 1.43V
Operating Temperature: -40°C ~ 100°C
Mounting Type: Surface Mount
Package / Case: 8-SMD, Gull Wing
Packaging: Cut Tape (CT)
на замовлення 15436 шт:
термін постачання 21-31 дні (днів)
| Кількість | Ціна без ПДВ |
|---|---|
| 2+ | 194.39 грн |
| 10+ | 136.09 грн |
| 100+ | 105.65 грн |
| 500+ | 86.58 грн |
| FOD3182SDV |
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Виробник: onsemi
Description: OPTOISO 5KV 1CH GATE DVR 8SMD
Mounting Type: Surface Mount
Package / Case: 8-SMD, Gull Wing
Packaging: Cut Tape (CT)
Voltage - Output Supply: 10V ~ 30V
Current - DC Forward (If) (Max): 25 mA
Number of Channels: 1
Part Status: Active
Pulse Width Distortion (Max): 65ns
Propagation Delay tpLH / tpHL (Max): 210ns, 210ns
Common Mode Transient Immunity (Min): 35kV/µs
Rise / Fall Time (Typ): 38ns, 24ns
Supplier Device Package: 8-SMD
Approval Agency: UL, VDE
Voltage - Isolation: 5000Vrms
Current - Output High, Low: 2.5A, 2.5A
Technology: Optical Coupling
Current - Peak Output: 3A
Voltage - Forward (Vf) (Typ): 1.43V
Operating Temperature: -40°C ~ 100°C
Description: OPTOISO 5KV 1CH GATE DVR 8SMD
Mounting Type: Surface Mount
Package / Case: 8-SMD, Gull Wing
Packaging: Cut Tape (CT)
Voltage - Output Supply: 10V ~ 30V
Current - DC Forward (If) (Max): 25 mA
Number of Channels: 1
Part Status: Active
Pulse Width Distortion (Max): 65ns
Propagation Delay tpLH / tpHL (Max): 210ns, 210ns
Common Mode Transient Immunity (Min): 35kV/µs
Rise / Fall Time (Typ): 38ns, 24ns
Supplier Device Package: 8-SMD
Approval Agency: UL, VDE
Voltage - Isolation: 5000Vrms
Current - Output High, Low: 2.5A, 2.5A
Technology: Optical Coupling
Current - Peak Output: 3A
Voltage - Forward (Vf) (Typ): 1.43V
Operating Temperature: -40°C ~ 100°C
на замовлення 22195 шт:
термін постачання 21-31 дні (днів)
| Кількість | Ціна без ПДВ |
|---|---|
| 2+ | 223.39 грн |
| 10+ | 157.22 грн |
| 100+ | 122.89 грн |
| 500+ | 101.17 грн |
| FMBS2383 |
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Виробник: onsemi
Description: TRANS NPN 160V 0.8A SUPERSOT-6
Power - Max: 630 mW
Voltage - Collector Emitter Breakdown (Max): 160 V
Current - Collector (Ic) (Max): 800 mA
Part Status: Obsolete
Supplier Device Package: SuperSOT™-6
Frequency - Transition: 120MHz
DC Current Gain (hFE) (Min) @ Ic, Vce: 80 @ 100mA, 5V
Current - Collector Cutoff (Max): 100nA (ICBO)
Vce Saturation (Max) @ Ib, Ic: 1V @ 50mA, 500mA
Operating Temperature: 150°C (TJ)
Transistor Type: NPN
Mounting Type: Surface Mount
Package / Case: SOT-23-6 Thin, TSOT-23-6
Packaging: Cut Tape (CT)
Description: TRANS NPN 160V 0.8A SUPERSOT-6
Power - Max: 630 mW
Voltage - Collector Emitter Breakdown (Max): 160 V
Current - Collector (Ic) (Max): 800 mA
Part Status: Obsolete
Supplier Device Package: SuperSOT™-6
Frequency - Transition: 120MHz
DC Current Gain (hFE) (Min) @ Ic, Vce: 80 @ 100mA, 5V
Current - Collector Cutoff (Max): 100nA (ICBO)
Vce Saturation (Max) @ Ib, Ic: 1V @ 50mA, 500mA
Operating Temperature: 150°C (TJ)
Transistor Type: NPN
Mounting Type: Surface Mount
Package / Case: SOT-23-6 Thin, TSOT-23-6
Packaging: Cut Tape (CT)
товару немає в наявності
В кошику
од. на суму грн.
| FXLA0104QFX |
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Виробник: onsemi
Description: IC XLTR VL BIDIR 12-UMLP
Packaging: Cut Tape (CT)
Features: Auto-Direction Sensing, Power-Off Protection
Package / Case: 12-UFQFN
Output Type: Tri-State, Non-Inverted
Mounting Type: Surface Mount
Operating Temperature: -40°C ~ 85°C (TA)
Data Rate: 140Mbps
Supplier Device Package: 12-UMLP (1.7x2)
Channel Type: Bidirectional
Translator Type: Voltage Level
Channels per Circuit: 4
Voltage - VCCA: 1.1 V ~ 3.6 V
Voltage - VCCB: 1.1 V ~ 3.6 V
Number of Circuits: 1
Description: IC XLTR VL BIDIR 12-UMLP
Packaging: Cut Tape (CT)
Features: Auto-Direction Sensing, Power-Off Protection
Package / Case: 12-UFQFN
Output Type: Tri-State, Non-Inverted
Mounting Type: Surface Mount
Operating Temperature: -40°C ~ 85°C (TA)
Data Rate: 140Mbps
Supplier Device Package: 12-UMLP (1.7x2)
Channel Type: Bidirectional
Translator Type: Voltage Level
Channels per Circuit: 4
Voltage - VCCA: 1.1 V ~ 3.6 V
Voltage - VCCB: 1.1 V ~ 3.6 V
Number of Circuits: 1
на замовлення 4495 шт:
термін постачання 21-31 дні (днів)
| Кількість | Ціна без ПДВ |
|---|---|
| 10+ | 31.35 грн |
| 15+ | 21.13 грн |
| 25+ | 18.93 грн |
| 100+ | 15.40 грн |
| 250+ | 14.27 грн |
| 500+ | 13.60 грн |
| 1000+ | 12.88 грн |
| FAN48632UC33X |
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Виробник: onsemi
Description: IC REG CONV GSM PA 1OUT 16WLCSP
Supplier Device Package: 16-WLCSP (1.78x1.78)
Applications: Converter, GSM PA
Operating Temperature: -40°C ~ 85°C
Voltage - Input: 2.35V ~ 5.5V
Number of Outputs: 1
Mounting Type: Surface Mount
Voltage - Output: 3.3V, 3.49V
Package / Case: 16-UFBGA, WLCSP
Packaging: Cut Tape (CT)
Description: IC REG CONV GSM PA 1OUT 16WLCSP
Supplier Device Package: 16-WLCSP (1.78x1.78)
Applications: Converter, GSM PA
Operating Temperature: -40°C ~ 85°C
Voltage - Input: 2.35V ~ 5.5V
Number of Outputs: 1
Mounting Type: Surface Mount
Voltage - Output: 3.3V, 3.49V
Package / Case: 16-UFBGA, WLCSP
Packaging: Cut Tape (CT)
на замовлення 2999 шт:
термін постачання 21-31 дні (днів)
| Кількість | Ціна без ПДВ |
|---|---|
| 3+ | 127.76 грн |
| 10+ | 76.38 грн |
| 25+ | 64.19 грн |
| 100+ | 47.28 грн |
| 250+ | 40.91 грн |
| 500+ | 36.99 грн |
| 1000+ | 33.16 грн |
| FSAL200MTCX |
Виробник: onsemi
Description: IC SWITCH SPDT X 4 12OHM 16TSSOP
Operating Temperature: -40°C ~ 85°C (TA)
Mounting Type: Surface Mount
Package / Case: 16-TSSOP (0.173", 4.40mm Width)
Packaging: Tape & Reel (TR)
Number of Circuits: 4
Current - Leakage (IS(off)) (Max): 100µA
Channel Capacitance (CS(off), CD(off)): 13pF
Switch Time (Ton, Toff) (Max): 20ns, 10ns
Channel-to-Channel Matching (ΔRon): 400mOhm
Multiplexer/Demultiplexer Circuit: 2:1
Switch Circuit: SPDT
Crosstalk: -70dB @ 30MHz
Charge Injection: 7pC
Voltage - Supply, Single (V+): 3V ~ 5.5V
Supplier Device Package: 16-TSSOP
-3db Bandwidth: 137MHz
On-State Resistance (Max): 12Ohm
Description: IC SWITCH SPDT X 4 12OHM 16TSSOP
Operating Temperature: -40°C ~ 85°C (TA)
Mounting Type: Surface Mount
Package / Case: 16-TSSOP (0.173", 4.40mm Width)
Packaging: Tape & Reel (TR)
Number of Circuits: 4
Current - Leakage (IS(off)) (Max): 100µA
Channel Capacitance (CS(off), CD(off)): 13pF
Switch Time (Ton, Toff) (Max): 20ns, 10ns
Channel-to-Channel Matching (ΔRon): 400mOhm
Multiplexer/Demultiplexer Circuit: 2:1
Switch Circuit: SPDT
Crosstalk: -70dB @ 30MHz
Charge Injection: 7pC
Voltage - Supply, Single (V+): 3V ~ 5.5V
Supplier Device Package: 16-TSSOP
-3db Bandwidth: 137MHz
On-State Resistance (Max): 12Ohm
на замовлення 5000 шт:
термін постачання 21-31 дні (днів)
| Кількість | Ціна без ПДВ |
|---|---|
| 2500+ | 42.46 грн |
| 5000+ | 39.35 грн |
| FSB50250AS |
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Виробник: onsemi
Description: MOSFET IPM 500V 1.2A 23-PWRSMD
Packaging: Cut Tape (CT)
Package / Case: 23-PowerSMD Module, Gull Wing
Mounting Type: Surface Mount
Type: MOSFET
Configuration: 3 Phase
Voltage - Isolation: 1500Vrms
Current: 1.2 A
Voltage: 500 V
Description: MOSFET IPM 500V 1.2A 23-PWRSMD
Packaging: Cut Tape (CT)
Package / Case: 23-PowerSMD Module, Gull Wing
Mounting Type: Surface Mount
Type: MOSFET
Configuration: 3 Phase
Voltage - Isolation: 1500Vrms
Current: 1.2 A
Voltage: 500 V
на замовлення 390 шт:
термін постачання 21-31 дні (днів)
| Кількість | Ціна без ПДВ |
|---|---|
| 1+ | 598.83 грн |
| 10+ | 393.09 грн |
| 100+ | 291.92 грн |
| FSB50550AS |
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Виробник: onsemi
Description: MOSFET IPM 500V 2A 23-PWRSMD MOD
Packaging: Cut Tape (CT)
Package / Case: 23-PowerSMD Module, Gull Wing
Mounting Type: Surface Mount
Type: MOSFET
Configuration: 3 Phase
Voltage - Isolation: 1500Vrms
Part Status: Active
Current: 2 A
Voltage: 500 V
Description: MOSFET IPM 500V 2A 23-PWRSMD MOD
Packaging: Cut Tape (CT)
Package / Case: 23-PowerSMD Module, Gull Wing
Mounting Type: Surface Mount
Type: MOSFET
Configuration: 3 Phase
Voltage - Isolation: 1500Vrms
Part Status: Active
Current: 2 A
Voltage: 500 V
на замовлення 157294 шт:
термін постачання 21-31 дні (днів)
| Кількість | Ціна без ПДВ |
|---|---|
| 1+ | 712.49 грн |
| 10+ | 472.12 грн |
| 100+ | 367.06 грн |
| FSB50250AS |
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Виробник: onsemi
Description: MOSFET IPM 500V 1.2A 23-PWRSMD
Packaging: Tape & Reel (TR)
Package / Case: 23-PowerSMD Module, Gull Wing
Mounting Type: Surface Mount
Type: MOSFET
Configuration: 3 Phase
Voltage - Isolation: 1500Vrms
Current: 1.2 A
Voltage: 500 V
Description: MOSFET IPM 500V 1.2A 23-PWRSMD
Packaging: Tape & Reel (TR)
Package / Case: 23-PowerSMD Module, Gull Wing
Mounting Type: Surface Mount
Type: MOSFET
Configuration: 3 Phase
Voltage - Isolation: 1500Vrms
Current: 1.2 A
Voltage: 500 V
товару немає в наявності
Мінімальне замовлення: 450 шт
В кошику
од. на суму грн.
| FSB50550AS |
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Виробник: onsemi
Description: MOSFET IPM 500V 2A 23-PWRSMD MOD
Packaging: Tape & Reel (TR)
Package / Case: 23-PowerSMD Module, Gull Wing
Mounting Type: Surface Mount
Type: MOSFET
Configuration: 3 Phase
Voltage - Isolation: 1500Vrms
Part Status: Active
Current: 2 A
Voltage: 500 V
Description: MOSFET IPM 500V 2A 23-PWRSMD MOD
Packaging: Tape & Reel (TR)
Package / Case: 23-PowerSMD Module, Gull Wing
Mounting Type: Surface Mount
Type: MOSFET
Configuration: 3 Phase
Voltage - Isolation: 1500Vrms
Part Status: Active
Current: 2 A
Voltage: 500 V
на замовлення 157050 шт:
термін постачання 21-31 дні (днів)
| Кількість | Ціна без ПДВ |
|---|---|
| 450+ | 311.42 грн |
| FSB50325AT |
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Виробник: onsemi
Description: MOSFET IPM 250V 1.7A 23-PWRDIP
Packaging: Tube
Package / Case: 23-PowerDIP Module, Offset Leads
Mounting Type: Through Hole
Type: MOSFET
Configuration: 3 Phase
Voltage - Isolation: 1500Vrms
Current: 1.7 A
Voltage: 250 V
Description: MOSFET IPM 250V 1.7A 23-PWRDIP
Packaging: Tube
Package / Case: 23-PowerDIP Module, Offset Leads
Mounting Type: Through Hole
Type: MOSFET
Configuration: 3 Phase
Voltage - Isolation: 1500Vrms
Current: 1.7 A
Voltage: 250 V
товару немає в наявності
В кошику
од. на суму грн.
| FSB50550A |
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Виробник: onsemi
Description: MOSFET IPM 500V 2A 23-PWRDIP MOD
Packaging: Tube
Package / Case: 23-PowerDIP Module (0.573", 14.56mm)
Mounting Type: Through Hole
Type: MOSFET
Configuration: 3 Phase
Voltage - Isolation: 1500Vrms
Part Status: Last Time Buy
Current: 2 A
Voltage: 500 V
Description: MOSFET IPM 500V 2A 23-PWRDIP MOD
Packaging: Tube
Package / Case: 23-PowerDIP Module (0.573", 14.56mm)
Mounting Type: Through Hole
Type: MOSFET
Configuration: 3 Phase
Voltage - Isolation: 1500Vrms
Part Status: Last Time Buy
Current: 2 A
Voltage: 500 V
товару немає в наявності
В кошику
од. на суму грн.
| FSB50550AT |
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Виробник: onsemi
Description: MOSFET IPM 500V 2A 23-PWRDIP MOD
Packaging: Tube
Package / Case: 23-PowerDIP Module (0.748", 19.00mm)
Mounting Type: Through Hole
Type: MOSFET
Configuration: 3 Phase
Voltage - Isolation: 1500Vrms
Part Status: Active
Current: 2 A
Voltage: 500 V
Description: MOSFET IPM 500V 2A 23-PWRDIP MOD
Packaging: Tube
Package / Case: 23-PowerDIP Module (0.748", 19.00mm)
Mounting Type: Through Hole
Type: MOSFET
Configuration: 3 Phase
Voltage - Isolation: 1500Vrms
Part Status: Active
Current: 2 A
Voltage: 500 V
товару немає в наявності
В кошику
од. на суму грн.
| FODM8801AV |
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Виробник: onsemi
Description: OPTOISO 3.75KV TRANS 4-MINI-FLAT
Current - DC Forward (If) (Max): 20 mA
Number of Channels: 1
Rise / Fall Time (Typ): 5µs, 5.5µs
Turn On / Turn Off Time (Typ): 6µs, 6µs
Voltage - Output (Max): 75V
Supplier Device Package: 4-Mini-Flat
Current Transfer Ratio (Max): 160% @ 1mA
Vce Saturation (Max): 400mV
Current Transfer Ratio (Min): 80% @ 1mA
Voltage - Isolation: 3750Vrms
Current - Output / Channel: 30mA
Input Type: DC
Voltage - Forward (Vf) (Typ): 1.35V
Operating Temperature: -40°C ~ 125°C
Mounting Type: Surface Mount
Output Type: Transistor
Package / Case: 4-SOIC (0.173", 4.40mm Width)
Packaging: Tube
Description: OPTOISO 3.75KV TRANS 4-MINI-FLAT
Current - DC Forward (If) (Max): 20 mA
Number of Channels: 1
Rise / Fall Time (Typ): 5µs, 5.5µs
Turn On / Turn Off Time (Typ): 6µs, 6µs
Voltage - Output (Max): 75V
Supplier Device Package: 4-Mini-Flat
Current Transfer Ratio (Max): 160% @ 1mA
Vce Saturation (Max): 400mV
Current Transfer Ratio (Min): 80% @ 1mA
Voltage - Isolation: 3750Vrms
Current - Output / Channel: 30mA
Input Type: DC
Voltage - Forward (Vf) (Typ): 1.35V
Operating Temperature: -40°C ~ 125°C
Mounting Type: Surface Mount
Output Type: Transistor
Package / Case: 4-SOIC (0.173", 4.40mm Width)
Packaging: Tube
на замовлення 961 шт:
термін постачання 21-31 дні (днів)
| Кількість | Ціна без ПДВ |
|---|---|
| 3+ | 112.09 грн |
| 10+ | 76.84 грн |
| 100+ | 58.11 грн |
| 500+ | 46.77 грн |
| FODM8801BV |
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Виробник: onsemi
Description: OPTOISO 3.75KV TRANS 4-MINI-FLAT
Packaging: Tube
Package / Case: 4-SOIC (0.173", 4.40mm Width)
Output Type: Transistor
Mounting Type: Surface Mount
Operating Temperature: -40°C ~ 125°C
Voltage - Forward (Vf) (Typ): 1.35V
Input Type: DC
Current - Output / Channel: 30mA
Voltage - Isolation: 3750Vrms
Current Transfer Ratio (Min): 130% @ 1mA
Vce Saturation (Max): 400mV
Current Transfer Ratio (Max): 260% @ 1mA
Supplier Device Package: 4-Mini-Flat
Voltage - Output (Max): 75V
Turn On / Turn Off Time (Typ): 6µs, 6µs
Rise / Fall Time (Typ): 5µs, 5.5µs
Number of Channels: 1
Current - DC Forward (If) (Max): 20 mA
Description: OPTOISO 3.75KV TRANS 4-MINI-FLAT
Packaging: Tube
Package / Case: 4-SOIC (0.173", 4.40mm Width)
Output Type: Transistor
Mounting Type: Surface Mount
Operating Temperature: -40°C ~ 125°C
Voltage - Forward (Vf) (Typ): 1.35V
Input Type: DC
Current - Output / Channel: 30mA
Voltage - Isolation: 3750Vrms
Current Transfer Ratio (Min): 130% @ 1mA
Vce Saturation (Max): 400mV
Current Transfer Ratio (Max): 260% @ 1mA
Supplier Device Package: 4-Mini-Flat
Voltage - Output (Max): 75V
Turn On / Turn Off Time (Typ): 6µs, 6µs
Rise / Fall Time (Typ): 5µs, 5.5µs
Number of Channels: 1
Current - DC Forward (If) (Max): 20 mA
на замовлення 238284 шт:
термін постачання 21-31 дні (днів)
| Кількість | Ціна без ПДВ |
|---|---|
| 3+ | 106.60 грн |
| 10+ | 73.14 грн |
| 150+ | 52.92 грн |
| 600+ | 43.68 грн |
| 1050+ | 41.77 грн |
| 2100+ | 39.73 грн |
| 5100+ | 36.95 грн |
| 10050+ | 35.61 грн |
| FAN7171M-F085 |
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Виробник: onsemi
Description: IC GATE DRVR HIGH-SIDE 8SOIC
Qualification: AEC-Q100
Grade: Automotive
Gate Type: IGBT, MOSFET (N-Channel)
Number of Drivers: 1
Driven Configuration: High-Side
Channel Type: Single
Rise / Fall Time (Typ): 25ns, 15ns
Supplier Device Package: 8-SOIC
High Side Voltage - Max (Bootstrap): 600 V
Input Type: Non-Inverting
Voltage - Supply: 10V ~ 20V
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: 8-SOIC (0.154", 3.90mm Width)
Packaging: Tube
DigiKey Programmable: Not Verified
Part Status: Obsolete
Current - Peak Output (Source, Sink): 4A, 4A
Logic Voltage - VIL, VIH: 0.8V, 2.5V
Description: IC GATE DRVR HIGH-SIDE 8SOIC
Qualification: AEC-Q100
Grade: Automotive
Gate Type: IGBT, MOSFET (N-Channel)
Number of Drivers: 1
Driven Configuration: High-Side
Channel Type: Single
Rise / Fall Time (Typ): 25ns, 15ns
Supplier Device Package: 8-SOIC
High Side Voltage - Max (Bootstrap): 600 V
Input Type: Non-Inverting
Voltage - Supply: 10V ~ 20V
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: 8-SOIC (0.154", 3.90mm Width)
Packaging: Tube
DigiKey Programmable: Not Verified
Part Status: Obsolete
Current - Peak Output (Source, Sink): 4A, 4A
Logic Voltage - VIL, VIH: 0.8V, 2.5V
на замовлення 3265 шт:
термін постачання 21-31 дні (днів)
| Кількість | Ціна без ПДВ |
|---|---|
| 2+ | 224.95 грн |
| 10+ | 162.05 грн |
| 95+ | 134.03 грн |
| 190+ | 120.51 грн |
| 285+ | 117.86 грн |
| 570+ | 113.99 грн |
| 1045+ | 109.34 грн |
| 2565+ | 106.01 грн |
| FCPF260N60E-F152 |
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Виробник: onsemi
Description: MOSFET N-CH 600V 15A TO220F
Supplier Device Package: TO-220F-3
Vgs(th) (Max) @ Id: 3.5V @ 250µA
Power Dissipation (Max): 36W (Tc)
Rds On (Max) @ Id, Vgs: 260mOhm @ 7.5A, 10V
Current - Continuous Drain (Id) @ 25°C: 15A (Tc)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Through Hole
Package / Case: TO-220-3 Full Pack
Packaging: Tube
Input Capacitance (Ciss) (Max) @ Vds: 2500 pF @ 25 V
Gate Charge (Qg) (Max) @ Vgs: 62 nC @ 10 V
Drain to Source Voltage (Vdss): 600 V
Part Status: Obsolete
Description: MOSFET N-CH 600V 15A TO220F
Supplier Device Package: TO-220F-3
Vgs(th) (Max) @ Id: 3.5V @ 250µA
Power Dissipation (Max): 36W (Tc)
Rds On (Max) @ Id, Vgs: 260mOhm @ 7.5A, 10V
Current - Continuous Drain (Id) @ 25°C: 15A (Tc)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Through Hole
Package / Case: TO-220-3 Full Pack
Packaging: Tube
Input Capacitance (Ciss) (Max) @ Vds: 2500 pF @ 25 V
Gate Charge (Qg) (Max) @ Vgs: 62 nC @ 10 V
Drain to Source Voltage (Vdss): 600 V
Part Status: Obsolete
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В кошику
од. на суму грн.
| FDI045N10A-F102 |
![]() |
Виробник: onsemi
Description: MOSFET N-CH 100V 120A I2PAK
Packaging: Tube
Package / Case: TO-262-3 Long Leads, I2PAK, TO-262AA
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 120A (Tc)
Rds On (Max) @ Id, Vgs: 4.5mOhm @ 100A, 10V
Power Dissipation (Max): 263W (Tc)
Vgs(th) (Max) @ Id: 4V @ 250µA
Supplier Device Package: TO-262 (I2PAK)
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 100 V
Gate Charge (Qg) (Max) @ Vgs: 74 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 5270 pF @ 50 V
Description: MOSFET N-CH 100V 120A I2PAK
Packaging: Tube
Package / Case: TO-262-3 Long Leads, I2PAK, TO-262AA
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 120A (Tc)
Rds On (Max) @ Id, Vgs: 4.5mOhm @ 100A, 10V
Power Dissipation (Max): 263W (Tc)
Vgs(th) (Max) @ Id: 4V @ 250µA
Supplier Device Package: TO-262 (I2PAK)
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 100 V
Gate Charge (Qg) (Max) @ Vgs: 74 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 5270 pF @ 50 V
на замовлення 72 шт:
термін постачання 21-31 дні (днів)
| Кількість | Ціна без ПДВ |
|---|---|
| 1+ | 377.80 грн |
| 50+ | 190.73 грн |
| FDP023N08B-F102 |
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Виробник: onsemi
Description: MOSFET N-CH 75V 120A TO220-3
Input Capacitance (Ciss) (Max) @ Vds: 13765 pF @ 37.5 V
Gate Charge (Qg) (Max) @ Vgs: 195 nC @ 10 V
Drain to Source Voltage (Vdss): 75 V
Vgs (Max): ±20V
Drive Voltage (Max Rds On, Min Rds On): 10V
Part Status: Active
Supplier Device Package: TO-220-3
Vgs(th) (Max) @ Id: 3.8V @ 250µA
Power Dissipation (Max): 245W (Tc)
Operating Temperature: -55°C ~ 175°C (TJ)
Mounting Type: Through Hole
Package / Case: TO-220-3
Packaging: Tube
Rds On (Max) @ Id, Vgs: 2.35mOhm @ 75A, 10V
Current - Continuous Drain (Id) @ 25°C: 120A (Tc)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Description: MOSFET N-CH 75V 120A TO220-3
Input Capacitance (Ciss) (Max) @ Vds: 13765 pF @ 37.5 V
Gate Charge (Qg) (Max) @ Vgs: 195 nC @ 10 V
Drain to Source Voltage (Vdss): 75 V
Vgs (Max): ±20V
Drive Voltage (Max Rds On, Min Rds On): 10V
Part Status: Active
Supplier Device Package: TO-220-3
Vgs(th) (Max) @ Id: 3.8V @ 250µA
Power Dissipation (Max): 245W (Tc)
Operating Temperature: -55°C ~ 175°C (TJ)
Mounting Type: Through Hole
Package / Case: TO-220-3
Packaging: Tube
Rds On (Max) @ Id, Vgs: 2.35mOhm @ 75A, 10V
Current - Continuous Drain (Id) @ 25°C: 120A (Tc)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
на замовлення 1148 шт:
термін постачання 21-31 дні (днів)
| Кількість | Ціна без ПДВ |
|---|---|
| 1+ | 336.26 грн |
| 10+ | 215.42 грн |
| 50+ | 168.69 грн |
| 100+ | 144.18 грн |
| 500+ | 119.44 грн |
| FDP027N08B-F102 |
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Виробник: onsemi
Description: MOSFET N-CH 80V 120A TO220-3
Packaging: Tube
Package / Case: TO-220-3
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 120A (Tc)
Rds On (Max) @ Id, Vgs: 2.7mOhm @ 100A, 10V
Power Dissipation (Max): 246W (Tc)
Vgs(th) (Max) @ Id: 4.5V @ 250µA
Supplier Device Package: TO-220-3
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 80 V
Gate Charge (Qg) (Max) @ Vgs: 178 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 13530 pF @ 40 V
Description: MOSFET N-CH 80V 120A TO220-3
Packaging: Tube
Package / Case: TO-220-3
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 120A (Tc)
Rds On (Max) @ Id, Vgs: 2.7mOhm @ 100A, 10V
Power Dissipation (Max): 246W (Tc)
Vgs(th) (Max) @ Id: 4.5V @ 250µA
Supplier Device Package: TO-220-3
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 80 V
Gate Charge (Qg) (Max) @ Vgs: 178 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 13530 pF @ 40 V
на замовлення 286 шт:
термін постачання 21-31 дні (днів)
| Кількість | Ціна без ПДВ |
|---|---|
| 2+ | 291.58 грн |
| 10+ | 185.45 грн |
| 50+ | 144.33 грн |
| 100+ | 123.02 грн |
| FDP030N06B-F102 |
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Виробник: onsemi
Description: MOSFET N-CH 60V 120A TO220-3
Packaging: Tube
Package / Case: TO-220-3
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 120A (Tc)
Rds On (Max) @ Id, Vgs: 3.1mOhm @ 100A, 10V
Power Dissipation (Max): 205W (Tc)
Vgs(th) (Max) @ Id: 4V @ 250µA
Supplier Device Package: TO-220-3
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 60 V
Gate Charge (Qg) (Max) @ Vgs: 99 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 8030 pF @ 30 V
Description: MOSFET N-CH 60V 120A TO220-3
Packaging: Tube
Package / Case: TO-220-3
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 120A (Tc)
Rds On (Max) @ Id, Vgs: 3.1mOhm @ 100A, 10V
Power Dissipation (Max): 205W (Tc)
Vgs(th) (Max) @ Id: 4V @ 250µA
Supplier Device Package: TO-220-3
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 60 V
Gate Charge (Qg) (Max) @ Vgs: 99 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 8030 pF @ 30 V
на замовлення 364 шт:
термін постачання 21-31 дні (днів)
| Кількість | Ціна без ПДВ |
|---|---|
| 2+ | 220.25 грн |
| 50+ | 106.27 грн |
| 100+ | 95.96 грн |
| FDP032N08B-F102 |
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Виробник: onsemi
Description: MOSFET N-CH 80V 120A TO220-3
Part Status: Active
Supplier Device Package: TO-220-3
Vgs(th) (Max) @ Id: 4.5V @ 250µA
Power Dissipation (Max): 263W (Tc)
Rds On (Max) @ Id, Vgs: 3.3mOhm @ 100A, 10V
Current - Continuous Drain (Id) @ 25°C: 120A (Tc)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 175°C (TJ)
Mounting Type: Through Hole
Package / Case: TO-220-3
Packaging: Tube
Input Capacitance (Ciss) (Max) @ Vds: 10965 pF @ 40 V
Gate Charge (Qg) (Max) @ Vgs: 144 nC @ 10 V
Drain to Source Voltage (Vdss): 80 V
Vgs (Max): ±20V
Drive Voltage (Max Rds On, Min Rds On): 10V
Description: MOSFET N-CH 80V 120A TO220-3
Part Status: Active
Supplier Device Package: TO-220-3
Vgs(th) (Max) @ Id: 4.5V @ 250µA
Power Dissipation (Max): 263W (Tc)
Rds On (Max) @ Id, Vgs: 3.3mOhm @ 100A, 10V
Current - Continuous Drain (Id) @ 25°C: 120A (Tc)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 175°C (TJ)
Mounting Type: Through Hole
Package / Case: TO-220-3
Packaging: Tube
Input Capacitance (Ciss) (Max) @ Vds: 10965 pF @ 40 V
Gate Charge (Qg) (Max) @ Vgs: 144 nC @ 10 V
Drain to Source Voltage (Vdss): 80 V
Vgs (Max): ±20V
Drive Voltage (Max Rds On, Min Rds On): 10V
на замовлення 4868 шт:
термін постачання 21-31 дні (днів)
| Кількість | Ціна без ПДВ |
|---|---|
| 2+ | 265.71 грн |
| 50+ | 129.96 грн |
| 100+ | 117.78 грн |
| 500+ | 90.51 грн |
| 1000+ | 84.08 грн |
| 2000+ | 80.68 грн |
| FDP045N10A-F102 |
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Виробник: onsemi
Description: MOSFET N-CH 100V 120A TO220-3
Packaging: Tube
Package / Case: TO-220-3
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 120A (Tc)
Rds On (Max) @ Id, Vgs: 4.5mOhm @ 100A, 10V
Power Dissipation (Max): 263W (Tc)
Vgs(th) (Max) @ Id: 4V @ 250µA
Supplier Device Package: TO-220-3
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 100 V
Gate Charge (Qg) (Max) @ Vgs: 74 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 5270 pF @ 50 V
Description: MOSFET N-CH 100V 120A TO220-3
Packaging: Tube
Package / Case: TO-220-3
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 120A (Tc)
Rds On (Max) @ Id, Vgs: 4.5mOhm @ 100A, 10V
Power Dissipation (Max): 263W (Tc)
Vgs(th) (Max) @ Id: 4V @ 250µA
Supplier Device Package: TO-220-3
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 100 V
Gate Charge (Qg) (Max) @ Vgs: 74 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 5270 pF @ 50 V
на замовлення 952 шт:
термін постачання 21-31 дні (днів)
| Кількість | Ціна без ПДВ |
|---|---|
| 1+ | 353.50 грн |
| 10+ | 226.51 грн |
| 50+ | 177.71 грн |
| 100+ | 152.04 грн |
| 500+ | 126.22 грн |
| FDP085N10A-F102 |
![]() |
Виробник: onsemi
Description: MOSFET N-CH 100V 96A TO220-3
Packaging: Tube
Package / Case: TO-220-3
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 96A (Tc)
Rds On (Max) @ Id, Vgs: 8.5mOhm @ 96A, 10V
Power Dissipation (Max): 188W (Tc)
Vgs(th) (Max) @ Id: 4V @ 250µA
Supplier Device Package: TO-220-3
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 100 V
Gate Charge (Qg) (Max) @ Vgs: 40 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 2695 pF @ 50 V
Description: MOSFET N-CH 100V 96A TO220-3
Packaging: Tube
Package / Case: TO-220-3
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 96A (Tc)
Rds On (Max) @ Id, Vgs: 8.5mOhm @ 96A, 10V
Power Dissipation (Max): 188W (Tc)
Vgs(th) (Max) @ Id: 4V @ 250µA
Supplier Device Package: TO-220-3
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 100 V
Gate Charge (Qg) (Max) @ Vgs: 40 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 2695 pF @ 50 V
на замовлення 800 шт:
термін постачання 21-31 дні (днів)
| Кількість | Ціна без ПДВ |
|---|---|
| 2+ | 241.41 грн |
| 50+ | 116.98 грн |
| 100+ | 105.83 грн |
| 500+ | 80.99 грн |
| FGH15T120SMD-F155 |
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Виробник: onsemi
Description: IGBT TRENCH FS 1200V 30A TO-247
Switching Energy: 1.15mJ (on), 460µJ (off)
Td (on/off) @ 25°C: 32ns/490ns
IGBT Type: Trench Field Stop
Supplier Device Package: TO-247-3
Vce(on) (Max) @ Vge, Ic: 2.4V @ 15V, 15A
Reverse Recovery Time (trr): 72 ns
Input Type: Standard
Operating Temperature: -55°C ~ 175°C (TJ)
Mounting Type: Through Hole
Package / Case: TO-247-3
Packaging: Tube
Power - Max: 333 W
Current - Collector Pulsed (Icm): 60 A
Voltage - Collector Emitter Breakdown (Max): 1200 V
Current - Collector (Ic) (Max): 30 A
Part Status: Obsolete
Gate Charge: 128 nC
Test Condition: 600V, 15A, 34Ohm, 15V
Description: IGBT TRENCH FS 1200V 30A TO-247
Switching Energy: 1.15mJ (on), 460µJ (off)
Td (on/off) @ 25°C: 32ns/490ns
IGBT Type: Trench Field Stop
Supplier Device Package: TO-247-3
Vce(on) (Max) @ Vge, Ic: 2.4V @ 15V, 15A
Reverse Recovery Time (trr): 72 ns
Input Type: Standard
Operating Temperature: -55°C ~ 175°C (TJ)
Mounting Type: Through Hole
Package / Case: TO-247-3
Packaging: Tube
Power - Max: 333 W
Current - Collector Pulsed (Icm): 60 A
Voltage - Collector Emitter Breakdown (Max): 1200 V
Current - Collector (Ic) (Max): 30 A
Part Status: Obsolete
Gate Charge: 128 nC
Test Condition: 600V, 15A, 34Ohm, 15V
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В кошику
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| FGH25T120SMD-F155 |
![]() |
Виробник: onsemi
Description: IGBT TRENCH FS 1200V 50A TO-247
Mounting Type: Through Hole
Package / Case: TO-247-3
Packaging: Tube
Power - Max: 428 W
Current - Collector Pulsed (Icm): 100 A
Voltage - Collector Emitter Breakdown (Max): 1200 V
Current - Collector (Ic) (Max): 50 A
Part Status: Active
Gate Charge: 225 nC
Test Condition: 600V, 25A, 23Ohm, 15V
Switching Energy: 1.74mJ (on), 560µJ (off)
Td (on/off) @ 25°C: 40ns/490ns
IGBT Type: Trench Field Stop
Supplier Device Package: TO-247-3
Vce(on) (Max) @ Vge, Ic: 2.4V @ 15V, 25A
Reverse Recovery Time (trr): 60 ns
Input Type: Standard
Operating Temperature: -55°C ~ 175°C (TJ)
Description: IGBT TRENCH FS 1200V 50A TO-247
Mounting Type: Through Hole
Package / Case: TO-247-3
Packaging: Tube
Power - Max: 428 W
Current - Collector Pulsed (Icm): 100 A
Voltage - Collector Emitter Breakdown (Max): 1200 V
Current - Collector (Ic) (Max): 50 A
Part Status: Active
Gate Charge: 225 nC
Test Condition: 600V, 25A, 23Ohm, 15V
Switching Energy: 1.74mJ (on), 560µJ (off)
Td (on/off) @ 25°C: 40ns/490ns
IGBT Type: Trench Field Stop
Supplier Device Package: TO-247-3
Vce(on) (Max) @ Vge, Ic: 2.4V @ 15V, 25A
Reverse Recovery Time (trr): 60 ns
Input Type: Standard
Operating Temperature: -55°C ~ 175°C (TJ)
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В кошику
од. на суму грн.
| FGH30T65UPDT-F155 |
![]() |
Виробник: onsemi
Description: IGBT 650V 60A 250W TO247-3
Power - Max: 250 W
Current - Collector Pulsed (Icm): 90 A
Voltage - Collector Emitter Breakdown (Max): 650 V
Current - Collector (Ic) (Max): 60 A
Part Status: Obsolete
Gate Charge: 155 nC
Test Condition: 400V, 30A, 8Ohm, 15V
Switching Energy: 760µJ (on), 400µJ (off)
Td (on/off) @ 25°C: 22ns/139ns
IGBT Type: Trench Field Stop
Supplier Device Package: TO-247-3
Vce(on) (Max) @ Vge, Ic: 2.3V @ 15V, 30A
Reverse Recovery Time (trr): 43 ns
Input Type: Standard
Operating Temperature: -55°C ~ 175°C (TJ)
Mounting Type: Through Hole
Package / Case: TO-247-3
Packaging: Tube
Description: IGBT 650V 60A 250W TO247-3
Power - Max: 250 W
Current - Collector Pulsed (Icm): 90 A
Voltage - Collector Emitter Breakdown (Max): 650 V
Current - Collector (Ic) (Max): 60 A
Part Status: Obsolete
Gate Charge: 155 nC
Test Condition: 400V, 30A, 8Ohm, 15V
Switching Energy: 760µJ (on), 400µJ (off)
Td (on/off) @ 25°C: 22ns/139ns
IGBT Type: Trench Field Stop
Supplier Device Package: TO-247-3
Vce(on) (Max) @ Vge, Ic: 2.3V @ 15V, 30A
Reverse Recovery Time (trr): 43 ns
Input Type: Standard
Operating Temperature: -55°C ~ 175°C (TJ)
Mounting Type: Through Hole
Package / Case: TO-247-3
Packaging: Tube
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| FGH40T120SMD |
![]() |
Виробник: onsemi
Description: IGBT TRENCH FS 1200V 80A TO-247
Packaging: Tube
Package / Case: TO-247-3
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 175°C (TJ)
Input Type: Standard
Reverse Recovery Time (trr): 65 ns
Vce(on) (Max) @ Vge, Ic: 2.4V @ 15V, 40A
Supplier Device Package: TO-247-3
IGBT Type: Trench Field Stop
Td (on/off) @ 25°C: 40ns/475ns
Switching Energy: 2.7mJ (on), 1.1mJ (off)
Test Condition: 600V, 40A, 10Ohm, 15V
Gate Charge: 370 nC
Part Status: Active
Current - Collector (Ic) (Max): 80 A
Voltage - Collector Emitter Breakdown (Max): 1200 V
Current - Collector Pulsed (Icm): 160 A
Power - Max: 555 W
Description: IGBT TRENCH FS 1200V 80A TO-247
Packaging: Tube
Package / Case: TO-247-3
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 175°C (TJ)
Input Type: Standard
Reverse Recovery Time (trr): 65 ns
Vce(on) (Max) @ Vge, Ic: 2.4V @ 15V, 40A
Supplier Device Package: TO-247-3
IGBT Type: Trench Field Stop
Td (on/off) @ 25°C: 40ns/475ns
Switching Energy: 2.7mJ (on), 1.1mJ (off)
Test Condition: 600V, 40A, 10Ohm, 15V
Gate Charge: 370 nC
Part Status: Active
Current - Collector (Ic) (Max): 80 A
Voltage - Collector Emitter Breakdown (Max): 1200 V
Current - Collector Pulsed (Icm): 160 A
Power - Max: 555 W
на замовлення 7750 шт:
термін постачання 21-31 дні (днів)
| Кількість | Ціна без ПДВ |
|---|---|
| 1+ | 684.27 грн |
| 30+ | 389.75 грн |
| 120+ | 330.68 грн |
| 510+ | 284.38 грн |
| FGH40T120SMD-F155 |
![]() |
Виробник: onsemi
Description: IGBT TRENCH FS 1200V 80A TO-247
Packaging: Tube
Package / Case: TO-247-3
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 175°C (TJ)
Input Type: Standard
Reverse Recovery Time (trr): 65 ns
Vce(on) (Max) @ Vge, Ic: 2.4V @ 15V, 40A
Supplier Device Package: TO-247-3
IGBT Type: Trench Field Stop
Td (on/off) @ 25°C: 40ns/475ns
Switching Energy: 2.7mJ (on), 1.1mJ (off)
Test Condition: 600V, 40A, 10Ohm, 15V
Gate Charge: 370 nC
Part Status: Active
Current - Collector (Ic) (Max): 80 A
Voltage - Collector Emitter Breakdown (Max): 1200 V
Current - Collector Pulsed (Icm): 160 A
Power - Max: 555 W
Description: IGBT TRENCH FS 1200V 80A TO-247
Packaging: Tube
Package / Case: TO-247-3
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 175°C (TJ)
Input Type: Standard
Reverse Recovery Time (trr): 65 ns
Vce(on) (Max) @ Vge, Ic: 2.4V @ 15V, 40A
Supplier Device Package: TO-247-3
IGBT Type: Trench Field Stop
Td (on/off) @ 25°C: 40ns/475ns
Switching Energy: 2.7mJ (on), 1.1mJ (off)
Test Condition: 600V, 40A, 10Ohm, 15V
Gate Charge: 370 nC
Part Status: Active
Current - Collector (Ic) (Max): 80 A
Voltage - Collector Emitter Breakdown (Max): 1200 V
Current - Collector Pulsed (Icm): 160 A
Power - Max: 555 W
на замовлення 421 шт:
термін постачання 21-31 дні (днів)
| Кількість | Ціна без ПДВ |
|---|---|
| 1+ | 686.62 грн |
| 30+ | 390.75 грн |
| 120+ | 331.52 грн |
| FOD8160V |
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Виробник: onsemi
Description: OPTOISO 5KV OPEN COLLECTOR 5-SOP
Current - Output / Channel: 50 mA
Number of Channels: 1
Propagation Delay tpLH / tpHL (Max): 90ns, 80ns
Common Mode Transient Immunity (Min): 20kV/µs
Rise / Fall Time (Typ): 22ns, 9ns
Supplier Device Package: 5-SOP
Inputs - Side 1/Side 2: 1/0
Current - DC Forward (If) (Max): 25mA
Voltage - Isolation: 5000Vrms
Input Type: DC
Data Rate: 10Mbps
Voltage - Forward (Vf) (Typ): 1.45V
Voltage - Supply: 3V ~ 5.5V
Operating Temperature: -40°C ~ 100°C
Mounting Type: Surface Mount
Output Type: Open Collector, Schottky Clamped
Package / Case: 6-SOIC (0.362", 9.20mm Width), 5 Leads
Packaging: Tube
Description: OPTOISO 5KV OPEN COLLECTOR 5-SOP
Current - Output / Channel: 50 mA
Number of Channels: 1
Propagation Delay tpLH / tpHL (Max): 90ns, 80ns
Common Mode Transient Immunity (Min): 20kV/µs
Rise / Fall Time (Typ): 22ns, 9ns
Supplier Device Package: 5-SOP
Inputs - Side 1/Side 2: 1/0
Current - DC Forward (If) (Max): 25mA
Voltage - Isolation: 5000Vrms
Input Type: DC
Data Rate: 10Mbps
Voltage - Forward (Vf) (Typ): 1.45V
Voltage - Supply: 3V ~ 5.5V
Operating Temperature: -40°C ~ 100°C
Mounting Type: Surface Mount
Output Type: Open Collector, Schottky Clamped
Package / Case: 6-SOIC (0.362", 9.20mm Width), 5 Leads
Packaging: Tube
на замовлення 7900 шт:
термін постачання 21-31 дні (днів)
| Кількість | Ціна без ПДВ |
|---|---|
| 2+ | 246.90 грн |
| 10+ | 175.41 грн |
| 100+ | 138.56 грн |
| 500+ | 114.96 грн |
| RHRP860-F085 |
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Виробник: onsemi
Description: DIODE STANDARD 600V 8A TO2202
Current - Reverse Leakage @ Vr: 100 µA @ 600 V
Voltage - Forward (Vf) (Max) @ If: 2.1 V @ 8 A
Voltage - DC Reverse (Vr) (Max): 600 V
Part Status: Obsolete
Operating Temperature - Junction: -65°C ~ 175°C
Supplier Device Package: TO-220-2
Current - Average Rectified (Io): 8A
Grade: Automotive
Technology: Standard
Reverse Recovery Time (trr): 35 ns
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Mounting Type: Through Hole
Package / Case: TO-220-2
Packaging: Tube
Qualification: AEC-Q101
Description: DIODE STANDARD 600V 8A TO2202
Current - Reverse Leakage @ Vr: 100 µA @ 600 V
Voltage - Forward (Vf) (Max) @ If: 2.1 V @ 8 A
Voltage - DC Reverse (Vr) (Max): 600 V
Part Status: Obsolete
Operating Temperature - Junction: -65°C ~ 175°C
Supplier Device Package: TO-220-2
Current - Average Rectified (Io): 8A
Grade: Automotive
Technology: Standard
Reverse Recovery Time (trr): 35 ns
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Mounting Type: Through Hole
Package / Case: TO-220-2
Packaging: Tube
Qualification: AEC-Q101
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| FAN302HLMY-F117 |
![]() |
Виробник: onsemi
Description: IC OFFLINE SWITCH FLYBACK 8SOIC
Packaging: Tape & Reel (TR)
Package / Case: 8-SOIC (0.154", 3.90mm Width)
Mounting Type: Surface Mount
Operating Temperature: -40°C ~ 105°C (TA)
Duty Cycle: 67%
Frequency - Switching: 85kHz
Internal Switch(s): No
Output Isolation: Isolated
Topology: Flyback
Voltage - Supply (Vcc/Vdd): 5V ~ 25V
Supplier Device Package: 8-SOIC
Fault Protection: Current Limiting, Over Temperature, Over Voltage
Voltage - Start Up: 16 V
Part Status: Obsolete
Description: IC OFFLINE SWITCH FLYBACK 8SOIC
Packaging: Tape & Reel (TR)
Package / Case: 8-SOIC (0.154", 3.90mm Width)
Mounting Type: Surface Mount
Operating Temperature: -40°C ~ 105°C (TA)
Duty Cycle: 67%
Frequency - Switching: 85kHz
Internal Switch(s): No
Output Isolation: Isolated
Topology: Flyback
Voltage - Supply (Vcc/Vdd): 5V ~ 25V
Supplier Device Package: 8-SOIC
Fault Protection: Current Limiting, Over Temperature, Over Voltage
Voltage - Start Up: 16 V
Part Status: Obsolete
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| FAN3224CMX-F085 |
![]() |
Виробник: onsemi
Description: IC GATE DRVR LOW-SIDE 8SOIC
Packaging: Tape & Reel (TR)
Package / Case: 8-SOIC (0.154", 3.90mm Width)
Mounting Type: Surface Mount
Operating Temperature: -40°C ~ 125°C (TA)
Voltage - Supply: 4.5V ~ 18V
Input Type: Non-Inverting
Supplier Device Package: 8-SOIC
Rise / Fall Time (Typ): 12ns, 9ns
Channel Type: Independent
Driven Configuration: Low-Side
Number of Drivers: 2
Gate Type: MOSFET (N-Channel)
Current - Peak Output (Source, Sink): 5A, 5A
Part Status: Active
DigiKey Programmable: Not Verified
Grade: Automotive
Qualification: AEC-Q100
Description: IC GATE DRVR LOW-SIDE 8SOIC
Packaging: Tape & Reel (TR)
Package / Case: 8-SOIC (0.154", 3.90mm Width)
Mounting Type: Surface Mount
Operating Temperature: -40°C ~ 125°C (TA)
Voltage - Supply: 4.5V ~ 18V
Input Type: Non-Inverting
Supplier Device Package: 8-SOIC
Rise / Fall Time (Typ): 12ns, 9ns
Channel Type: Independent
Driven Configuration: Low-Side
Number of Drivers: 2
Gate Type: MOSFET (N-Channel)
Current - Peak Output (Source, Sink): 5A, 5A
Part Status: Active
DigiKey Programmable: Not Verified
Grade: Automotive
Qualification: AEC-Q100
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| FAN3224TMX-F085 |
![]() |
Виробник: onsemi
Description: IC GATE DRVR LOW-SIDE 8SOIC
Packaging: Tape & Reel (TR)
Package / Case: 8-SOIC (0.154", 3.90mm Width)
Mounting Type: Surface Mount
Operating Temperature: -40°C ~ 125°C (TA)
Voltage - Supply: 4.5V ~ 18V
Input Type: Non-Inverting
Supplier Device Package: 8-SOIC
Rise / Fall Time (Typ): 12ns, 9ns
Channel Type: Independent
Driven Configuration: Low-Side
Number of Drivers: 2
Gate Type: MOSFET (N-Channel)
Logic Voltage - VIL, VIH: 0.8V, 2V
Current - Peak Output (Source, Sink): 5A, 5A
Part Status: Active
DigiKey Programmable: Not Verified
Grade: Automotive
Qualification: AEC-Q100
Description: IC GATE DRVR LOW-SIDE 8SOIC
Packaging: Tape & Reel (TR)
Package / Case: 8-SOIC (0.154", 3.90mm Width)
Mounting Type: Surface Mount
Operating Temperature: -40°C ~ 125°C (TA)
Voltage - Supply: 4.5V ~ 18V
Input Type: Non-Inverting
Supplier Device Package: 8-SOIC
Rise / Fall Time (Typ): 12ns, 9ns
Channel Type: Independent
Driven Configuration: Low-Side
Number of Drivers: 2
Gate Type: MOSFET (N-Channel)
Logic Voltage - VIL, VIH: 0.8V, 2V
Current - Peak Output (Source, Sink): 5A, 5A
Part Status: Active
DigiKey Programmable: Not Verified
Grade: Automotive
Qualification: AEC-Q100
на замовлення 5000 шт:
термін постачання 21-31 дні (днів)
| Кількість | Ціна без ПДВ |
|---|---|
| 2500+ | 62.00 грн |
| 5000+ | 58.40 грн |
| FAN3226TMX-F085 |
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Виробник: onsemi
Description: IC GATE DRVR LOW-SIDE 8SOIC
Part Status: Active
Current - Peak Output (Source, Sink): 3A, 3A
Logic Voltage - VIL, VIH: 0.8V, 2V
Gate Type: MOSFET (N-Channel)
Number of Drivers: 2
Driven Configuration: Low-Side
Channel Type: Independent
Rise / Fall Time (Typ): 12ns, 9ns
Supplier Device Package: 8-SOIC
Input Type: Inverting
Voltage - Supply: 4.5V ~ 18V
Operating Temperature: -40°C ~ 125°C (TA)
Mounting Type: Surface Mount
Qualification: AEC-Q100
Grade: Automotive
DigiKey Programmable: Not Verified
Package / Case: 8-SOIC (0.154", 3.90mm Width)
Packaging: Tape & Reel (TR)
Description: IC GATE DRVR LOW-SIDE 8SOIC
Part Status: Active
Current - Peak Output (Source, Sink): 3A, 3A
Logic Voltage - VIL, VIH: 0.8V, 2V
Gate Type: MOSFET (N-Channel)
Number of Drivers: 2
Driven Configuration: Low-Side
Channel Type: Independent
Rise / Fall Time (Typ): 12ns, 9ns
Supplier Device Package: 8-SOIC
Input Type: Inverting
Voltage - Supply: 4.5V ~ 18V
Operating Temperature: -40°C ~ 125°C (TA)
Mounting Type: Surface Mount
Qualification: AEC-Q100
Grade: Automotive
DigiKey Programmable: Not Verified
Package / Case: 8-SOIC (0.154", 3.90mm Width)
Packaging: Tape & Reel (TR)
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Мінімальне замовлення: 2500 шт
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| FAN3227CMX-F085 |
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Виробник: onsemi
Description: IC GATE DRVR LOW-SIDE 8SOIC
Qualification: AEC-Q100
DigiKey Programmable: Not Verified
Grade: Automotive
Current - Peak Output (Source, Sink): 3A, 3A
Driven Configuration: Low-Side
Channel Type: Independent
Rise / Fall Time (Typ): 12ns, 9ns
Supplier Device Package: 8-SOIC
Input Type: Non-Inverting
Voltage - Supply: 4.5V ~ 18V
Operating Temperature: -40°C ~ 125°C (TA)
Mounting Type: Surface Mount
Package / Case: 8-SOIC (0.154", 3.90mm Width)
Packaging: Tape & Reel (TR)
Gate Type: N-Channel MOSFET
Number of Drivers: 2
Description: IC GATE DRVR LOW-SIDE 8SOIC
Qualification: AEC-Q100
DigiKey Programmable: Not Verified
Grade: Automotive
Current - Peak Output (Source, Sink): 3A, 3A
Driven Configuration: Low-Side
Channel Type: Independent
Rise / Fall Time (Typ): 12ns, 9ns
Supplier Device Package: 8-SOIC
Input Type: Non-Inverting
Voltage - Supply: 4.5V ~ 18V
Operating Temperature: -40°C ~ 125°C (TA)
Mounting Type: Surface Mount
Package / Case: 8-SOIC (0.154", 3.90mm Width)
Packaging: Tape & Reel (TR)
Gate Type: N-Channel MOSFET
Number of Drivers: 2
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| FAN3228CMX-F085 |
![]() |
Виробник: onsemi
Description: IC GATE DRVR LOW-SIDE 8SOIC
Qualification: AEC-Q100
DigiKey Programmable: Not Verified
Grade: Automotive
Current - Peak Output (Source, Sink): 3A, 3A
Gate Type: N-Channel MOSFET
Number of Drivers: 2
Driven Configuration: Low-Side
Channel Type: Independent
Rise / Fall Time (Typ): 12ns, 9ns
Supplier Device Package: 8-SOIC
Input Type: Inverting, Non-Inverting
Voltage - Supply: 4.5V ~ 18V
Operating Temperature: -40°C ~ 125°C (TA)
Mounting Type: Surface Mount
Package / Case: 8-SOIC (0.154", 3.90mm Width)
Packaging: Tape & Reel (TR)
Description: IC GATE DRVR LOW-SIDE 8SOIC
Qualification: AEC-Q100
DigiKey Programmable: Not Verified
Grade: Automotive
Current - Peak Output (Source, Sink): 3A, 3A
Gate Type: N-Channel MOSFET
Number of Drivers: 2
Driven Configuration: Low-Side
Channel Type: Independent
Rise / Fall Time (Typ): 12ns, 9ns
Supplier Device Package: 8-SOIC
Input Type: Inverting, Non-Inverting
Voltage - Supply: 4.5V ~ 18V
Operating Temperature: -40°C ~ 125°C (TA)
Mounting Type: Surface Mount
Package / Case: 8-SOIC (0.154", 3.90mm Width)
Packaging: Tape & Reel (TR)
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| FAN6757MRMX |
![]() |
Виробник: onsemi
Description: IC OFFLINE SWITCH FLYBACK 8SOIC
Part Status: Obsolete
Voltage - Start Up: 17 V
Fault Protection: Current Limiting, Open Loop, Over Temperature, Over Voltage, Short Circuit
Supplier Device Package: 8-SOIC
Voltage - Supply (Vcc/Vdd): 11V ~ 30V
Topology: Flyback
Output Isolation: Isolated
Internal Switch(s): No
Frequency - Switching: 65kHz
Duty Cycle: 82.5%
Operating Temperature: -40°C ~ 105°C (TA)
Mounting Type: Surface Mount
Package / Case: 8-SOIC (0.154", 3.90mm Width)
Packaging: Tape & Reel (TR)
Description: IC OFFLINE SWITCH FLYBACK 8SOIC
Part Status: Obsolete
Voltage - Start Up: 17 V
Fault Protection: Current Limiting, Open Loop, Over Temperature, Over Voltage, Short Circuit
Supplier Device Package: 8-SOIC
Voltage - Supply (Vcc/Vdd): 11V ~ 30V
Topology: Flyback
Output Isolation: Isolated
Internal Switch(s): No
Frequency - Switching: 65kHz
Duty Cycle: 82.5%
Operating Temperature: -40°C ~ 105°C (TA)
Mounting Type: Surface Mount
Package / Case: 8-SOIC (0.154", 3.90mm Width)
Packaging: Tape & Reel (TR)
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| FAN6921AMLMY |
![]() |
Виробник: onsemi
Description: IC OFFLINE SWITCH FLYBACK 16SOIC
Part Status: Obsolete
Voltage - Start Up: 18 V
Fault Protection: Current Limiting, Open Loop, Over Load, Over Power, Over Temperature, Over Voltage, Short Circuit
Supplier Device Package: 16-SOIC
Voltage - Supply (Vcc/Vdd): 7.5V ~ 25V
Topology: Flyback
Output Isolation: Isolated
Internal Switch(s): No
Operating Temperature: -40°C ~ 105°C (TA)
Mounting Type: Surface Mount
Package / Case: 16-SOIC (0.154", 3.90mm Width)
Packaging: Tape & Reel (TR)
Description: IC OFFLINE SWITCH FLYBACK 16SOIC
Part Status: Obsolete
Voltage - Start Up: 18 V
Fault Protection: Current Limiting, Open Loop, Over Load, Over Power, Over Temperature, Over Voltage, Short Circuit
Supplier Device Package: 16-SOIC
Voltage - Supply (Vcc/Vdd): 7.5V ~ 25V
Topology: Flyback
Output Isolation: Isolated
Internal Switch(s): No
Operating Temperature: -40°C ~ 105°C (TA)
Mounting Type: Surface Mount
Package / Case: 16-SOIC (0.154", 3.90mm Width)
Packaging: Tape & Reel (TR)
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| FCD620N60ZF |
![]() |
Виробник: onsemi
Description: MOSFET N-CH 600V 7.3A DPAK
Packaging: Tape & Reel (TR)
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 7.3A (Tc)
Rds On (Max) @ Id, Vgs: 620mOhm @ 3.6A, 10V
Power Dissipation (Max): 89W (Tc)
Vgs(th) (Max) @ Id: 5V @ 250µA
Supplier Device Package: TO-252AA
Part Status: Not For New Designs
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 600 V
Gate Charge (Qg) (Max) @ Vgs: 36 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 1135 pF @ 25 V
Description: MOSFET N-CH 600V 7.3A DPAK
Packaging: Tape & Reel (TR)
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 7.3A (Tc)
Rds On (Max) @ Id, Vgs: 620mOhm @ 3.6A, 10V
Power Dissipation (Max): 89W (Tc)
Vgs(th) (Max) @ Id: 5V @ 250µA
Supplier Device Package: TO-252AA
Part Status: Not For New Designs
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 600 V
Gate Charge (Qg) (Max) @ Vgs: 36 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 1135 pF @ 25 V
на замовлення 11800 шт:
термін постачання 21-31 дні (днів)
| Кількість | Ціна без ПДВ |
|---|---|
| 2500+ | 59.33 грн |
| FCD900N60Z |
![]() |
Виробник: onsemi
Description: MOSFET N-CH 600V 4.5A TO252
Input Capacitance (Ciss) (Max) @ Vds: 720 pF @ 25 V
Gate Charge (Qg) (Max) @ Vgs: 17 nC @ 10 V
Drain to Source Voltage (Vdss): 600 V
Vgs (Max): ±20V
Drive Voltage (Max Rds On, Min Rds On): 10V
Supplier Device Package: TO-252AA
Vgs(th) (Max) @ Id: 3.5V @ 250µA
Power Dissipation (Max): 52W (Tc)
Rds On (Max) @ Id, Vgs: 900mOhm @ 2.3A, 10V
Current - Continuous Drain (Id) @ 25°C: 4.5A (Tc)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Packaging: Tape & Reel (TR)
Description: MOSFET N-CH 600V 4.5A TO252
Input Capacitance (Ciss) (Max) @ Vds: 720 pF @ 25 V
Gate Charge (Qg) (Max) @ Vgs: 17 nC @ 10 V
Drain to Source Voltage (Vdss): 600 V
Vgs (Max): ±20V
Drive Voltage (Max Rds On, Min Rds On): 10V
Supplier Device Package: TO-252AA
Vgs(th) (Max) @ Id: 3.5V @ 250µA
Power Dissipation (Max): 52W (Tc)
Rds On (Max) @ Id, Vgs: 900mOhm @ 2.3A, 10V
Current - Continuous Drain (Id) @ 25°C: 4.5A (Tc)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Packaging: Tape & Reel (TR)
на замовлення 10000 шт:
термін постачання 21-31 дні (днів)
| Кількість | Ціна без ПДВ |
|---|---|
| 2500+ | 47.55 грн |
| 5000+ | 44.00 грн |
| FDB8132_F085 |
![]() |
Виробник: onsemi
Description: MOSFET N-CH 30V 80A D2PAK
Packaging: Tape & Reel (TR)
Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 80A (Tc)
Rds On (Max) @ Id, Vgs: 1.6mOhm @ 80A, 10V
Power Dissipation (Max): 341W (Tc)
Vgs(th) (Max) @ Id: 4V @ 250µA
Supplier Device Package: TO-263 (D2Pak)
Grade: Automotive
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 30 V
Gate Charge (Qg) (Max) @ Vgs: 350 nC @ 13 V
Input Capacitance (Ciss) (Max) @ Vds: 14100 pF @ 15 V
Qualification: AEC-Q101
Description: MOSFET N-CH 30V 80A D2PAK
Packaging: Tape & Reel (TR)
Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 80A (Tc)
Rds On (Max) @ Id, Vgs: 1.6mOhm @ 80A, 10V
Power Dissipation (Max): 341W (Tc)
Vgs(th) (Max) @ Id: 4V @ 250µA
Supplier Device Package: TO-263 (D2Pak)
Grade: Automotive
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 30 V
Gate Charge (Qg) (Max) @ Vgs: 350 nC @ 13 V
Input Capacitance (Ciss) (Max) @ Vds: 14100 pF @ 15 V
Qualification: AEC-Q101
товару немає в наявності
Мінімальне замовлення: 800 шт
В кошику
од. на суму грн.
































