| Фото | Назва | Виробник | Інформація |
Доступність |
Ціна |
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NLV9306USG | onsemi |
Description: IC TRANSLATOR BIDIRECTIONAL US8Packaging: Cut Tape (CT) Features: Auto-Direction Sensing Package / Case: 8-VFSOP (0.091", 2.30mm Width) Output Type: Open Drain Mounting Type: Surface Mount Operating Temperature: -55°C ~ 125°C (TA) Supplier Device Package: US8 Channel Type: Bidirectional Translator Type: Voltage Level Channels per Circuit: 2 Voltage - VCCA: 1 V ~ 3.6 V Voltage - VCCB: 1.8 V ~ 5.5 V Part Status: Active Number of Circuits: 1 |
на замовлення 1098 шт: термін постачання 21-31 дні (днів) |
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NCP361MUTBG | onsemi |
Description: TVS DEVICE MIXED 6-UDFNPackaging: Cut Tape (CT) Package / Case: 6-UDFN Exposed Pad Mounting Type: Surface Mount Applications: General Purpose Technology: Mixed Technology Supplier Device Package: 6-UDFN (2x2) Part Status: Active Number of Circuits: 1 |
на замовлення 4633 шт: термін постачання 21-31 дні (днів) |
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NCV303LSN42T1G | onsemi |
Description: IC SUPERVISOR 1 CHANNEL SOT23-5Packaging: Cut Tape (CT) Package / Case: SOT-23-5 Thin, TSOT-23-5 Mounting Type: Surface Mount Output: Open Drain or Open Collector Type: Simple Reset/Power-On Reset Reset: Active Low Operating Temperature: -40°C ~ 125°C (TA) Number of Voltages Monitored: 1 Reset Timeout: Adjustable/Selectable Voltage - Threshold: 4.2V Supplier Device Package: 5-TSOP Part Status: Active |
на замовлення 905 шт: термін постачання 21-31 дні (днів) |
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NCP432BVSNT1G | onsemi |
Description: IC VREF SHUNT ADJ 0.5% SOT23-3Packaging: Cut Tape (CT) Tolerance: ±0.5% Package / Case: TO-236-3, SC-59, SOT-23-3 Temperature Coefficient: 50ppm/°C Typical Output Type: Adjustable Mounting Type: Surface Mount Reference Type: Shunt Operating Temperature: -40°C ~ 125°C (TA) Supplier Device Package: SOT-23-3 (TO-236) Voltage - Output (Min/Fixed): 2.5V Part Status: Active Current - Cathode: 100 mA Current - Output: 40 µA Voltage - Output (Max): 36 V |
на замовлення 4263 шт: термін постачання 21-31 дні (днів) |
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NVTJD4001NT1G | onsemi |
Description: MOSFET 2N-CH 30V 0.25A SC88Packaging: Cut Tape (CT) Package / Case: 6-TSSOP, SC-88, SOT-363 Mounting Type: Surface Mount Configuration: 2 N-Channel (Dual) Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) Power - Max: 272mW Drain to Source Voltage (Vdss): 30V Current - Continuous Drain (Id) @ 25°C: 250mA Input Capacitance (Ciss) (Max) @ Vds: 33pF @ 5V Rds On (Max) @ Id, Vgs: 1.5Ohm @ 10mA, 4V Gate Charge (Qg) (Max) @ Vgs: 1.3nC @ 5V Vgs(th) (Max) @ Id: 1.5V @ 100µA Supplier Device Package: SC-88/SC70-6/SOT-363 Grade: Automotive Qualification: AEC-Q101 |
на замовлення 84297 шт: термін постачання 21-31 дні (днів) |
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NTMFD4C85NT1G | onsemi |
Description: MOSFET 2N-CH 30V 15.4A 8DFNPackaging: Cut Tape (CT) Package / Case: 8-PowerTDFN Mounting Type: Surface Mount Configuration: 2 N-Channel (Dual) Asymmetrical Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) Power - Max: 1.13W Drain to Source Voltage (Vdss): 30V Current - Continuous Drain (Id) @ 25°C: 15.4A, 29.7A Input Capacitance (Ciss) (Max) @ Vds: 1960pF @ 15V Rds On (Max) @ Id, Vgs: 3mOhm @ 20A, 10V Gate Charge (Qg) (Max) @ Vgs: 32nC @ 10V Vgs(th) (Max) @ Id: 2.1V @ 250µA Supplier Device Package: 8-DFN (5x6) |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||||||||
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3LN01C-TB-E | onsemi |
Description: MOSFET N-CH 30V 150MA 3CP |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||||||||
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NTMFS4C03NT1G | onsemi |
Description: MOSFET N-CH 30V 30A/136A 5DFNPackaging: Cut Tape (CT) Package / Case: 8-PowerTDFN, 5 Leads Mounting Type: Surface Mount Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 30A (Ta), 136A (Tc) Rds On (Max) @ Id, Vgs: 2.1mOhm @ 30A, 10V Power Dissipation (Max): 3.1W (Ta), 64W (Tc) Vgs(th) (Max) @ Id: 2.2V @ 250µA Supplier Device Package: 5-DFN (5x6) (8-SOFL) Part Status: Active Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 30 V Gate Charge (Qg) (Max) @ Vgs: 45.2 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 3071 pF @ 15 V |
на замовлення 3624 шт: термін постачання 21-31 дні (днів) |
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NTMFS4C13NT1G | onsemi |
Description: MOSFET N-CH 30V 7.2A/38A 5DFNPackaging: Cut Tape (CT) |
на замовлення 81 шт: термін постачання 21-31 дні (днів) |
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NTTFS4C05NTAG | onsemi |
Description: MOSFET N-CH 30V 12A/75A 8WDFNPackaging: Cut Tape (CT) Package / Case: 8-PowerWDFN Mounting Type: Surface Mount Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 12A (Ta), 75A (Tc) Rds On (Max) @ Id, Vgs: 3.6mOhm @ 30A, 10V Power Dissipation (Max): 820mW (Ta), 33W (Tc) Vgs(th) (Max) @ Id: 2.2V @ 250µA Supplier Device Package: 8-WDFN (3.3x3.3) Part Status: Active Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 30 V Gate Charge (Qg) (Max) @ Vgs: 31 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 1988 pF @ 15 V |
на замовлення 709 шт: термін постачання 21-31 дні (днів) |
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NVMFS5C404NLWFT1G | onsemi |
Description: MOSFET N-CH 40V 49A/352A 5DFNPackaging: Cut Tape (CT) Package / Case: 8-PowerTDFN, 5 Leads Mounting Type: Surface Mount Operating Temperature: -55°C ~ 175°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 49A (Ta), 352A (Tc) Rds On (Max) @ Id, Vgs: 0.75mOhm @ 50A, 10V Power Dissipation (Max): 3.9W (Ta), 200W (Tc) Vgs(th) (Max) @ Id: 2V @ 250µA Supplier Device Package: 5-DFN (5x6) (8-SOFL) Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 40 V Gate Charge (Qg) (Max) @ Vgs: 181 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 12168 pF @ 25 V Grade: Automotive Qualification: AEC-Q101 |
на замовлення 1288 шт: термін постачання 21-31 дні (днів) |
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5HP01M-TL-H | onsemi |
Description: MOSFET P-CH 50V 70MA 3MCP |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||||||||
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6HP04CH-TL-W | onsemi |
Description: MOSFET P-CH 60V 370MA 3CPHPackaging: Cut Tape (CT) Package / Case: TO-236-3, SC-59, SOT-23-3 Mounting Type: Surface Mount Operating Temperature: 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: P-Channel Current - Continuous Drain (Id) @ 25°C: 370mA (Ta) Rds On (Max) @ Id, Vgs: 4.2Ohm @ 190mA, 10V Supplier Device Package: 3-CPH Part Status: Obsolete Drive Voltage (Max Rds On, Min Rds On): 4V, 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 60 V Gate Charge (Qg) (Max) @ Vgs: 0.84 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 24.1 pF @ 20 V |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||||||||
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NCT75MNR2G | onsemi |
Description: SENSOR DIGITAL -55C-125C 8DFNPackaging: Cut Tape (CT) Features: One-Shot, Output Switch, Programmable Limit, Shutdown Mode Package / Case: 8-VFDFN Exposed Pad Output Type: I2C/SMBus Mounting Type: Surface Mount Operating Temperature: -55°C ~ 125°C Voltage - Supply: 3V ~ 5.5V Sensor Type: Digital, Local Resolution: 11 b Supplier Device Package: 8-DFN (2x2) Test Condition: 0°C ~ 70°C (-55°C ~ 125°C) Accuracy - Highest (Lowest): ±1°C (±3°C) Sensing Temperature - Local: -55°C ~ 125°C |
на замовлення 2355 шт: термін постачання 21-31 дні (днів) |
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SMBT3904DW1T1G | onsemi |
Description: TRANS 2NPN 40V 200MA SC88/SC70Packaging: Cut Tape (CT) Package / Case: 6-TSSOP, SC-88, SOT-363 Mounting Type: Surface Mount Transistor Type: 2 NPN (Dual) Operating Temperature: -55°C ~ 150°C (TJ) Power - Max: 150mW Current - Collector (Ic) (Max): 200mA Voltage - Collector Emitter Breakdown (Max): 40V Vce Saturation (Max) @ Ib, Ic: 300mV @ 5mA, 50mA DC Current Gain (hFE) (Min) @ Ic, Vce: 100 @ 10mA, 1V Frequency - Transition: 300MHz Supplier Device Package: SC-88/SC70-6/SOT-363 Part Status: Active |
на замовлення 4106 шт: термін постачання 21-31 дні (днів) |
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NSM6056MT1G | onsemi |
Description: TRANS NPN 40V 0.6A SC74Packaging: Cut Tape (CT) Package / Case: SC-74, SOT-457 Mounting Type: Surface Mount Transistor Type: NPN + Zener Diode (Isolated) Operating Temperature: -55°C ~ 150°C (TJ) Vce Saturation (Max) @ Ib, Ic: 750mV @ 50mA, 500mA DC Current Gain (hFE) (Min) @ Ic, Vce: 100 @ 150mA, 1V Frequency - Transition: 250MHz Supplier Device Package: SC-74 Part Status: Active Current - Collector (Ic) (Max): 600 mA Voltage - Collector Emitter Breakdown (Max): 40 V Power - Max: 380 mW |
на замовлення 8679 шт: термін постачання 21-31 дні (днів) |
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CPH3216-TL-E | onsemi |
Description: TRANS NPN 50V 1A 3CPHPackaging: Cut Tape (CT) Package / Case: TO-236-3, SC-59, SOT-23-3 Mounting Type: Surface Mount Transistor Type: NPN Operating Temperature: 150°C (TJ) Vce Saturation (Max) @ Ib, Ic: 190mV @ 10mA, 500mA Current - Collector Cutoff (Max): 100nA (ICBO) DC Current Gain (hFE) (Min) @ Ic, Vce: 200 @ 100mA, 2V Frequency - Transition: 420MHz Supplier Device Package: 3-CPH Current - Collector (Ic) (Max): 1 A Voltage - Collector Emitter Breakdown (Max): 50 V Power - Max: 900 mW |
на замовлення 2824 шт: термін постачання 21-31 дні (днів) |
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2SD1624S-TD-E | onsemi |
Description: TRANS NPN 50V 3A PCPPackaging: Cut Tape (CT) Package / Case: TO-243AA Mounting Type: Surface Mount Transistor Type: NPN Operating Temperature: 150°C (TJ) Vce Saturation (Max) @ Ib, Ic: 500mV @ 100mA, 2A Current - Collector Cutoff (Max): 1µA (ICBO) DC Current Gain (hFE) (Min) @ Ic, Vce: 140 @ 100mA, 2V Frequency - Transition: 150MHz Supplier Device Package: PCP Part Status: Active Current - Collector (Ic) (Max): 3 A Voltage - Collector Emitter Breakdown (Max): 50 V Power - Max: 500 mW |
на замовлення 1892 шт: термін постачання 21-31 дні (днів) |
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SBC846BWT1G | onsemi |
Description: TRANS NPN 65V 0.1A SC70-3Packaging: Cut Tape (CT) Package / Case: SC-70, SOT-323 Mounting Type: Surface Mount Transistor Type: NPN Operating Temperature: -55°C ~ 150°C (TJ) Vce Saturation (Max) @ Ib, Ic: 600mV @ 5mA, 100mA Current - Collector Cutoff (Max): 15nA (ICBO) DC Current Gain (hFE) (Min) @ Ic, Vce: 200 @ 2mA, 5V Frequency - Transition: 100MHz Supplier Device Package: SC-70-3 (SOT323) Part Status: Active Current - Collector (Ic) (Max): 100 mA Voltage - Collector Emitter Breakdown (Max): 65 V Power - Max: 150 mW Grade: Automotive Qualification: AEC-Q101 |
на замовлення 29516 шт: термін постачання 21-31 дні (днів) |
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CPH6003A-TL-E | onsemi |
Description: RF TRANS NPN 12V 7GHZ 6-CPHPackaging: Cut Tape (CT) Package / Case: SOT-23-6 Thin, TSOT-23-6 Mounting Type: Surface Mount Transistor Type: NPN Operating Temperature: 150°C (TJ) Gain: 9dB Power - Max: 800mW Current - Collector (Ic) (Max): 150mA Voltage - Collector Emitter Breakdown (Max): 12V DC Current Gain (hFE) (Min) @ Ic, Vce: 100 @ 50mA, 5V Frequency - Transition: 7GHz Noise Figure (dB Typ @ f): 1.8dB @ 1GHz Supplier Device Package: 6-CPH |
на замовлення 192845 шт: термін постачання 21-31 дні (днів) |
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2SC5227A-5-TB-E | onsemi |
Description: RF TRANS NPN 10V 7GHZ 3-CPPackaging: Cut Tape (CT) Package / Case: TO-236-3, SC-59, SOT-23-3 Mounting Type: Surface Mount Transistor Type: NPN Operating Temperature: 150°C (TJ) Gain: 12dB Power - Max: 200mW Current - Collector (Ic) (Max): 70mA Voltage - Collector Emitter Breakdown (Max): 10V DC Current Gain (hFE) (Min) @ Ic, Vce: 135 @ 20mA, 5V Frequency - Transition: 7GHz Noise Figure (dB Typ @ f): 1dB @ 1GHz Supplier Device Package: 3-CP |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||||||||
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2SC5226A-5-TL-E | onsemi |
Description: RF TRANS NPN 10V 7GHZ 3MCPPackaging: Cut Tape (CT) Package / Case: SC-70, SOT-323 Mounting Type: Surface Mount Transistor Type: NPN Operating Temperature: 150°C (TJ) Gain: 12dB Power - Max: 150mW Current - Collector (Ic) (Max): 70mA Voltage - Collector Emitter Breakdown (Max): 10V DC Current Gain (hFE) (Min) @ Ic, Vce: 135 @ 20mA, 5V Frequency - Transition: 7GHz Noise Figure (dB Typ @ f): 1dB @ 1GHz Supplier Device Package: 3-MCP Part Status: Active |
на замовлення 41991 шт: термін постачання 21-31 дні (днів) |
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NSVMUN5332DW1T1G | onsemi |
Description: TRANS PREBIAS 1NPN 1PNP SOT-363Packaging: Cut Tape (CT) Package / Case: 6-TSSOP, SC-88, SOT-363 Mounting Type: Surface Mount Transistor Type: 1 NPN, 1 PNP - Pre-Biased (Dual) Power - Max: 250mW Current - Collector (Ic) (Max): 100mA Voltage - Collector Emitter Breakdown (Max): 50V Vce Saturation (Max) @ Ib, Ic: 250mV @ 1mA, 10mA Current - Collector Cutoff (Max): 500nA DC Current Gain (hFE) (Min) @ Ic, Vce: 15 @ 5mA, 10V Resistor - Base (R1): 4.7kOhms Resistor - Emitter Base (R2): 4.7kOhms Supplier Device Package: SC-88/SC70-6/SOT-363 Grade: Automotive Qualification: AEC-Q101 |
на замовлення 515 шт: термін постачання 21-31 дні (днів) |
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SMUN5211T1G | onsemi |
Description: TRANS PREBIAS NPN 50V SC70-3Packaging: Cut Tape (CT) Package / Case: SC-70, SOT-323 Mounting Type: Surface Mount Transistor Type: NPN - Pre-Biased Vce Saturation (Max) @ Ib, Ic: 250mV @ 300µA, 10mA Current - Collector Cutoff (Max): 500nA DC Current Gain (hFE) (Min) @ Ic, Vce: 35 @ 5mA, 10V Supplier Device Package: SC-70-3 (SOT323) Current - Collector (Ic) (Max): 100 mA Voltage - Collector Emitter Breakdown (Max): 50 V Power - Max: 202 mW Resistor - Base (R1): 10 kOhms Resistor - Emitter Base (R2): 10 kOhms Grade: Automotive Qualification: AEC-Q101 Resistors Included: R1 and R2 |
на замовлення 60272 шт: термін постачання 21-31 дні (днів) |
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MUN5133T1G | onsemi |
Description: TRANS PREBIAS PNP 50V SC70-3 |
на замовлення 15259 шт: термін постачання 21-31 дні (днів) |
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NUP2115LT1G | onsemi |
Description: TVS DIODE 24VWM 50VC SOT23-3Packaging: Cut Tape (CT) Package / Case: TO-236-3, SC-59, SOT-23-3 Mounting Type: Surface Mount Type: Zener Operating Temperature: -55°C ~ 150°C (TJ) Applications: Automotive Capacitance @ Frequency: 10pF @ 1MHz Current - Peak Pulse (10/1000µs): 3A (8/20µs) Voltage - Reverse Standoff (Typ): 24V (Min) Supplier Device Package: SOT-23-3 (TO-236) Bidirectional Channels: 2 Voltage - Breakdown (Min): 26.2V Voltage - Clamping (Max) @ Ipp: 50V Power - Peak Pulse: 200W Power Line Protection: No |
на замовлення 53571 шт: термін постачання 21-31 дні (днів) |
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ESD7451N2T5G | onsemi |
Description: TVS DIODE 3.3VWM 2XDFNPackaging: Cut Tape (CT) Package / Case: 2-XDFN Mounting Type: Surface Mount Type: Zener Operating Temperature: -55°C ~ 150°C (TJ) Applications: RF Antenna Capacitance @ Frequency: 0.25pF @ 1MHz Voltage - Reverse Standoff (Typ): 3.3V (Max) Supplier Device Package: 2-XDFN (1x0.6) (SOD-882) Bidirectional Channels: 1 Voltage - Breakdown (Min): 6V (Typ) Power Line Protection: No Grade: Automotive Qualification: AEC-Q101 |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||||||||
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ESDR0502NMUTAG | onsemi |
Description: TVS DIODE 5.5VWM 6UDFNPackaging: Cut Tape (CT) Package / Case: 6-UFDFN Mounting Type: Surface Mount Type: Steering (Rail to Rail) Operating Temperature: -40°C ~ 125°C (TJ) Applications: Ethernet Capacitance @ Frequency: 0.3pF @ 1MHz Voltage - Reverse Standoff (Typ): 5.5V (Max) Supplier Device Package: 6-UDFN (1.2x1) Unidirectional Channels: 3 Voltage - Breakdown (Min): 6V Power - Peak Pulse: 100W Power Line Protection: Yes |
на замовлення 8752 шт: термін постачання 21-31 дні (днів) |
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| ESD7421N2T5G | onsemi |
Description: TVS DIODE 5VWM 38.1VC 2XDFNPackaging: Cut Tape (CT) Package / Case: 2-XDFN Mounting Type: Surface Mount Type: Zener Operating Temperature: -55°C ~ 150°C (TJ) Applications: General Purpose Capacitance @ Frequency: 0.3pF @ 1MHz Current - Peak Pulse (10/1000µs): 16A (100ns) Voltage - Reverse Standoff (Typ): 5V Supplier Device Package: 2-XDFN (1x0.6) (SOD-882) Bidirectional Channels: 1 Voltage - Breakdown (Min): 10.5V Voltage - Clamping (Max) @ Ipp: 38.1V Power Line Protection: No Part Status: Active |
на замовлення 1446015 шт: термін постачання 21-31 дні (днів) |
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MC74HCT573ADWR2G | onsemi |
Description: IC D-TYPE TRANSP 8:8 20-SOICPackaging: Cut Tape (CT) Package / Case: 20-SOIC (0.295", 7.50mm Width) Output Type: Tri-State Mounting Type: Surface Mount Circuit: 8:8 Logic Type: D-Type Transparent Latch Operating Temperature: -55°C ~ 125°C Voltage - Supply: 4.5V ~ 5.5V Independent Circuits: 1 Current - Output High, Low: 6mA, 6mA Delay Time - Propagation: 30ns Supplier Device Package: 20-SOIC Part Status: Active |
на замовлення 18990 шт: термін постачання 21-31 дні (днів) |
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LV8726TA-NH | onsemi |
Description: IC MTR DRV BIPLR 2.7-5.5V 48TQFPPackaging: Cut Tape (CT) Package / Case: 48-LQFP Exposed Pad Mounting Type: Surface Mount Function: Controller - Current Management Current - Output: 50mA Interface: SPI Operating Temperature: -40°C ~ 85°C (TA) Output Configuration: Pre-Driver - Half Bridge (4) Voltage - Supply: 2.7V ~ 5.5V Applications: Printer Technology: Power MOSFET Voltage - Load: 9V ~ 55V Supplier Device Package: 48-TQFP-EP (7x7) Motor Type - Stepper: Bipolar Step Resolution: 1/2 ~ 1/128 |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||||||||
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NCN5110MNTWG | onsemi |
Description: IC TRANSCEIVER 1/1 40QFNPackaging: Cut Tape (CT) Package / Case: 40-VFQFN Exposed Pad Mounting Type: Surface Mount Type: Transceiver Operating Temperature: -40°C ~ 105°C Number of Drivers/Receivers: 1/1 Supplier Device Package: 40-QFN (6x6) Part Status: Active |
на замовлення 2463 шт: термін постачання 21-31 дні (днів) |
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NCN5130MNTWG | onsemi |
Description: IC TRANSCEIVER FULL 1/1 40QFNPackaging: Cut Tape (CT) Package / Case: 40-VFQFN Exposed Pad Mounting Type: Surface Mount Type: Transceiver Operating Temperature: -40°C ~ 105°C Voltage - Supply: 3.13V ~ 3.47V Number of Drivers/Receivers: 1/1 Supplier Device Package: 40-QFN (6x6) Duplex: Full Part Status: Active |
на замовлення 3469 шт: термін постачання 21-31 дні (днів) |
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MC100EP56DTR2G | onsemi |
Description: IC DIFF DIG MULTPL 2X2:1 20TSSOPPackaging: Cut Tape (CT) Package / Case: 20-TSSOP (0.173", 4.40mm Width) Mounting Type: Surface Mount Circuit: 2 x 2:1 Type: Differential Digital Multiplexer Operating Temperature: -40°C ~ 85°C Voltage - Supply: ±3V ~ 5.5V Independent Circuits: 1 Voltage Supply Source: Dual Supply Supplier Device Package: 20-TSSOP |
на замовлення 1581 шт: термін постачання 21-31 дні (днів) |
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NGTB60N65FL2WG | onsemi |
Description: IGBT FIELD STOP 650V 100A TO-247Packaging: Tube Package / Case: TO-247-3 Mounting Type: Through Hole Operating Temperature: -55°C ~ 175°C (TJ) Input Type: Standard Reverse Recovery Time (trr): 96 ns Vce(on) (Max) @ Vge, Ic: 2V @ 15V, 60A Supplier Device Package: TO-247-3 IGBT Type: Field Stop Td (on/off) @ 25°C: 117ns/265ns Switching Energy: 1.59mJ (on), 660µJ (off) Test Condition: 400V, 60A, 10Ohm, 15V Gate Charge: 318 nC Part Status: Obsolete Current - Collector (Ic) (Max): 100 A Voltage - Collector Emitter Breakdown (Max): 650 V Current - Collector Pulsed (Icm): 240 A Power - Max: 595 W |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||||||||
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NCP1602AEASNT1G | onsemi |
Description: IC PFC CTRLR CRM 6TSOPPackaging: Tape & Reel (TR) Package / Case: SOT-23-6 Thin, TSOT-23-6 Mounting Type: Surface Mount Operating Temperature: -40°C ~ 125°C Voltage - Supply: 9.5V ~ 30V Mode: Critical Conduction (CRM) Supplier Device Package: 6-TSOP Part Status: Obsolete Current - Startup: 480 µA |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||||||||
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NTMFS5H409NLT1G | onsemi |
Description: MOSFET N-CH 40V 41A/270A 5DFNPackaging: Tape & Reel (TR) Package / Case: 8-PowerTDFN, 5 Leads Mounting Type: Surface Mount Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 41A (Ta), 270A (Tc) Rds On (Max) @ Id, Vgs: 1.1mOhm @ 50A, 10V Power Dissipation (Max): 3.2W (Ta), 140W (Tc) Vgs(th) (Max) @ Id: 2V @ 250µA Supplier Device Package: 5-DFN (5x6) (8-SOFL) Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 40 V Gate Charge (Qg) (Max) @ Vgs: 89 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 5700 pF @ 20 V |
на замовлення 30000 шт: термін постачання 21-31 дні (днів) |
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NTTFS5C453NLTAG | onsemi |
Description: MOSFET N-CH 40V 23A/107A 8WDFNPackaging: Tape & Reel (TR) Package / Case: 8-PowerWDFN Mounting Type: Surface Mount Operating Temperature: -55°C ~ 175°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 23A (Ta), 107A (Tc) Rds On (Max) @ Id, Vgs: 3mOhm @ 40A, 10V Power Dissipation (Max): 3.3W (Ta), 68W (Tc) Vgs(th) (Max) @ Id: 2V @ 250µA Supplier Device Package: 8-WDFN (3.3x3.3) Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 40 V Gate Charge (Qg) (Max) @ Vgs: 35 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 2100 pF @ 25 V |
на замовлення 7500 шт: термін постачання 21-31 дні (днів) |
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NTTFS5C670NLTAG | onsemi |
Description: MOSFET N-CH 60V 16A/70A 8WDFNPackaging: Tape & Reel (TR) Package / Case: 8-PowerWDFN Mounting Type: Surface Mount Operating Temperature: -55°C ~ 175°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 16A (Ta), 70A (Tc) Rds On (Max) @ Id, Vgs: 6.5mOhm @ 35A, 10V Power Dissipation (Max): 3.2W (Ta), 63W (Tc) Vgs(th) (Max) @ Id: 2V @ 250µA Supplier Device Package: 8-WDFN (3.3x3.3) Part Status: Active Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 60 V Gate Charge (Qg) (Max) @ Vgs: 20 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 1400 pF @ 25 V |
на замовлення 13500 шт: термін постачання 21-31 дні (днів) |
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NTTFS5C454NLTAG | onsemi |
Description: MOSFET N-CH 40V 20A/85A 8WDFNPackaging: Tape & Reel (TR) Package / Case: 8-PowerWDFN Mounting Type: Surface Mount Operating Temperature: -55°C ~ 175°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 20A (Ta), 85A (Tc) Rds On (Max) @ Id, Vgs: 3.8mOhm @ 20A, 10V Power Dissipation (Max): 3.2W (Ta), 55W (Tc) Vgs(th) (Max) @ Id: 2V @ 250µA Supplier Device Package: 8-WDFN (3.3x3.3) Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 40 V Gate Charge (Qg) (Max) @ Vgs: 18 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 1600 pF @ 25 V |
на замовлення 16500 шт: термін постачання 21-31 дні (днів) |
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NTTFS5C673NLTAG | onsemi |
Description: MOSFET N-CH 60V 13A/50A 8WDFNPackaging: Tape & Reel (TR) Package / Case: 8-PowerWDFN Mounting Type: Surface Mount Operating Temperature: -55°C ~ 175°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 13A (Ta), 50A (Tc) Rds On (Max) @ Id, Vgs: 9.3mOhm @ 25A, 10V Power Dissipation (Max): 3.1W (Ta), 46W (Tc) Vgs(th) (Max) @ Id: 2V @ 250µA Supplier Device Package: 8-WDFN (3.3x3.3) Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 60 V Gate Charge (Qg) (Max) @ Vgs: 9.5 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 880 pF @ 25 V |
на замовлення 25500 шт: термін постачання 21-31 дні (днів) |
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NCP51402MNTXG | onsemi |
Description: IC REG LDO DDR 1OUT 10DFN |
на замовлення 9000 шт: термін постачання 21-31 дні (днів) |
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NCP81245MNTXG | onsemi |
Description: IC REG CTRLR IMVP8 7OUT 52QFN |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||||||||
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NCP81151BMNTBG | onsemi |
Description: IC GATE DRVR HALF-BRIDGE 8DFNPackaging: Tape & Reel (TR) Package / Case: 8-VFDFN Exposed Pad Mounting Type: Surface Mount Operating Temperature: -40°C ~ 150°C (TJ) Voltage - Supply: 4.5V ~ 5.5V Input Type: Non-Inverting High Side Voltage - Max (Bootstrap): 40 V Supplier Device Package: 8-DFN (2x2) Rise / Fall Time (Typ): 16ns, 11ns Channel Type: Synchronous Driven Configuration: Half-Bridge Number of Drivers: 2 Gate Type: N-Channel MOSFET Logic Voltage - VIL, VIH: 0.6V, 3.3V DigiKey Programmable: Not Verified |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||||||||
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NCS20032DMR2G | onsemi |
Description: IC OPAMP GP 2 CIRCUIT 8MSOPPackaging: Tape & Reel (TR) Package / Case: 8-TSSOP, 8-MSOP (0.118", 3.00mm Width) Output Type: Rail-to-Rail Mounting Type: Surface Mount Amplifier Type: General Purpose Operating Temperature: -40°C ~ 125°C Current - Supply: 275µA (x2 Channels) Slew Rate: 8V/µs Gain Bandwidth Product: 7 MHz Current - Input Bias: 1 pA Voltage - Input Offset: 500 µV Supplier Device Package: 8-MSOP Part Status: Active Number of Circuits: 2 Current - Output / Channel: 96 mA Voltage - Supply Span (Min): 1.7 V Voltage - Supply Span (Max): 5.5 V |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||||||||
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LE25S161XATAG | onsemi |
Description: IC FLASH 16MBIT SPI 70MHZ 8WLCSPPackaging: Tape & Reel (TR) Package / Case: 8-XFBGA, WLCSP Mounting Type: Surface Mount Memory Size: 16Mbit Memory Type: Non-Volatile Operating Temperature: -40°C ~ 90°C (TA) Voltage - Supply: 1.65V ~ 1.95V Technology: FLASH Clock Frequency: 70 MHz Memory Format: FLASH Supplier Device Package: 8-WLCSP (2.92x1.53) Write Cycle Time - Word, Page: 700µs Memory Interface: SPI Memory Organization: 2M x 8 DigiKey Programmable: Not Verified |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||||||||
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NCP1602AEASNT1G | onsemi |
Description: IC PFC CTRLR CRM 6TSOPPackaging: Cut Tape (CT) Package / Case: SOT-23-6 Thin, TSOT-23-6 Mounting Type: Surface Mount Operating Temperature: -40°C ~ 125°C Voltage - Supply: 9.5V ~ 30V Mode: Critical Conduction (CRM) Supplier Device Package: 6-TSOP Part Status: Obsolete Current - Startup: 480 µA |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||||||||
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NTMFS5H409NLT1G | onsemi |
Description: MOSFET N-CH 40V 41A/270A 5DFNPackaging: Cut Tape (CT) Package / Case: 8-PowerTDFN, 5 Leads Mounting Type: Surface Mount Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 41A (Ta), 270A (Tc) Rds On (Max) @ Id, Vgs: 1.1mOhm @ 50A, 10V Power Dissipation (Max): 3.2W (Ta), 140W (Tc) Vgs(th) (Max) @ Id: 2V @ 250µA Supplier Device Package: 5-DFN (5x6) (8-SOFL) Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 40 V Gate Charge (Qg) (Max) @ Vgs: 89 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 5700 pF @ 20 V |
на замовлення 30586 шт: термін постачання 21-31 дні (днів) |
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NTTFS5C453NLTAG | onsemi |
Description: MOSFET N-CH 40V 23A/107A 8WDFNPackaging: Cut Tape (CT) Package / Case: 8-PowerWDFN Mounting Type: Surface Mount Operating Temperature: -55°C ~ 175°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 23A (Ta), 107A (Tc) Rds On (Max) @ Id, Vgs: 3mOhm @ 40A, 10V Power Dissipation (Max): 3.3W (Ta), 68W (Tc) Vgs(th) (Max) @ Id: 2V @ 250µA Supplier Device Package: 8-WDFN (3.3x3.3) Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 40 V Gate Charge (Qg) (Max) @ Vgs: 35 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 2100 pF @ 25 V |
на замовлення 8875 шт: термін постачання 21-31 дні (днів) |
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NTTFS5C670NLTAG | onsemi |
Description: MOSFET N-CH 60V 16A/70A 8WDFNPackaging: Cut Tape (CT) Package / Case: 8-PowerWDFN Mounting Type: Surface Mount Operating Temperature: -55°C ~ 175°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 16A (Ta), 70A (Tc) Rds On (Max) @ Id, Vgs: 6.5mOhm @ 35A, 10V Power Dissipation (Max): 3.2W (Ta), 63W (Tc) Vgs(th) (Max) @ Id: 2V @ 250µA Supplier Device Package: 8-WDFN (3.3x3.3) Part Status: Active Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 60 V Gate Charge (Qg) (Max) @ Vgs: 20 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 1400 pF @ 25 V |
на замовлення 14675 шт: термін постачання 21-31 дні (днів) |
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NTTFS5C454NLTAG | onsemi |
Description: MOSFET N-CH 40V 20A/85A 8WDFNPackaging: Cut Tape (CT) Package / Case: 8-PowerWDFN Mounting Type: Surface Mount Operating Temperature: -55°C ~ 175°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 20A (Ta), 85A (Tc) Rds On (Max) @ Id, Vgs: 3.8mOhm @ 20A, 10V Power Dissipation (Max): 3.2W (Ta), 55W (Tc) Vgs(th) (Max) @ Id: 2V @ 250µA Supplier Device Package: 8-WDFN (3.3x3.3) Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 40 V Gate Charge (Qg) (Max) @ Vgs: 18 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 1600 pF @ 25 V |
на замовлення 17265 шт: термін постачання 21-31 дні (днів) |
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NTTFS5C673NLTAG | onsemi |
Description: MOSFET N-CH 60V 13A/50A 8WDFNPackaging: Cut Tape (CT) Package / Case: 8-PowerWDFN Mounting Type: Surface Mount Operating Temperature: -55°C ~ 175°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 13A (Ta), 50A (Tc) Rds On (Max) @ Id, Vgs: 9.3mOhm @ 25A, 10V Power Dissipation (Max): 3.1W (Ta), 46W (Tc) Vgs(th) (Max) @ Id: 2V @ 250µA Supplier Device Package: 8-WDFN (3.3x3.3) Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 60 V Gate Charge (Qg) (Max) @ Vgs: 9.5 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 880 pF @ 25 V |
на замовлення 26209 шт: термін постачання 21-31 дні (днів) |
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NCP51402MNTXG | onsemi |
Description: IC REG LDO DDR 1OUT 10DFN |
на замовлення 10637 шт: термін постачання 21-31 дні (днів) |
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NCP81245MNTXG | onsemi |
Description: IC REG CTRLR IMVP8 7OUT 52QFN |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||||||||
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NCP81151BMNTBG | onsemi |
Description: IC GATE DRVR HALF-BRIDGE 8DFNPackaging: Cut Tape (CT) Package / Case: 8-VFDFN Exposed Pad Mounting Type: Surface Mount Operating Temperature: -40°C ~ 150°C (TJ) Voltage - Supply: 4.5V ~ 5.5V Input Type: Non-Inverting High Side Voltage - Max (Bootstrap): 40 V Supplier Device Package: 8-DFN (2x2) Rise / Fall Time (Typ): 16ns, 11ns Channel Type: Synchronous Driven Configuration: Half-Bridge Number of Drivers: 2 Gate Type: N-Channel MOSFET Logic Voltage - VIL, VIH: 0.6V, 3.3V DigiKey Programmable: Not Verified |
на замовлення 1521 шт: термін постачання 21-31 дні (днів) |
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NCS20032DMR2G | onsemi |
Description: IC OPAMP GP 2 CIRCUIT 8MSOPPackaging: Cut Tape (CT) Package / Case: 8-TSSOP, 8-MSOP (0.118", 3.00mm Width) Output Type: Rail-to-Rail Mounting Type: Surface Mount Amplifier Type: General Purpose Operating Temperature: -40°C ~ 125°C Current - Supply: 275µA (x2 Channels) Slew Rate: 8V/µs Gain Bandwidth Product: 7 MHz Current - Input Bias: 1 pA Voltage - Input Offset: 500 µV Supplier Device Package: 8-MSOP Part Status: Active Number of Circuits: 2 Current - Output / Channel: 96 mA Voltage - Supply Span (Min): 1.7 V Voltage - Supply Span (Max): 5.5 V |
на замовлення 2125 шт: термін постачання 21-31 дні (днів) |
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VEC2315-TL-W | onsemi |
Description: MOSFET 2P-CH 60V 2.5A VEC8Packaging: Cut Tape (CT) Package / Case: 8-SMD, Flat Lead Mounting Type: Surface Mount Configuration: 2 P-Channel (Dual) Operating Temperature: 150°C (TJ) Technology: MOSFET (Metal Oxide) Power - Max: 1W Drain to Source Voltage (Vdss): 60V Current - Continuous Drain (Id) @ 25°C: 2.5A Input Capacitance (Ciss) (Max) @ Vds: 420pF @ 20V Rds On (Max) @ Id, Vgs: 137mOhm @ 1.5A, 10V Gate Charge (Qg) (Max) @ Vgs: 11nC @ 10V FET Feature: Logic Level Gate, 4V Drive Vgs(th) (Max) @ Id: 2.6V @ 1mA Supplier Device Package: SOT-28FL/VEC8 Part Status: Obsolete |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||||||||
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LE25S161XATAG | onsemi |
Description: IC FLASH 16MBIT SPI 70MHZ 8WLCSPPackaging: Cut Tape (CT) Package / Case: 8-XFBGA, WLCSP Mounting Type: Surface Mount Memory Size: 16Mbit Memory Type: Non-Volatile Operating Temperature: -40°C ~ 90°C (TA) Voltage - Supply: 1.65V ~ 1.95V Technology: FLASH Clock Frequency: 70 MHz Memory Format: FLASH Supplier Device Package: 8-WLCSP (2.92x1.53) Write Cycle Time - Word, Page: 700µs Memory Interface: SPI Memory Organization: 2M x 8 DigiKey Programmable: Not Verified |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||||||||
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1N5370BRLG | onsemi |
Description: DIODE ZENER 56V 5W AXIALPackaging: Cut Tape (CT) Tolerance: ±5% Package / Case: Axial Mounting Type: Through Hole Operating Temperature: -65°C ~ 200°C Voltage - Zener (Nom) (Vz): 56 V Impedance (Max) (Zzt): 35 Ohms Supplier Device Package: Axial Power - Max: 5 W Voltage - Forward (Vf) (Max) @ If: 1.2 V @ 1 A Current - Reverse Leakage @ Vr: 500 nA @ 42.6 V |
на замовлення 25197 шт: термін постачання 21-31 дні (днів) |
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1N5374BRLG | onsemi |
Description: DIODE ZENER 75V 5W AXIALPackaging: Cut Tape (CT) Tolerance: ±5% Package / Case: Axial Mounting Type: Through Hole Operating Temperature: -65°C ~ 200°C Voltage - Zener (Nom) (Vz): 75 V Impedance (Max) (Zzt): 45 Ohms Supplier Device Package: Axial Part Status: Active Power - Max: 5 W Voltage - Forward (Vf) (Max) @ If: 1.2 V @ 1 A Current - Reverse Leakage @ Vr: 500 nA @ 56 V |
на замовлення 11990 шт: термін постачання 21-31 дні (днів) |
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| NLV9306USG |
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Виробник: onsemi
Description: IC TRANSLATOR BIDIRECTIONAL US8
Packaging: Cut Tape (CT)
Features: Auto-Direction Sensing
Package / Case: 8-VFSOP (0.091", 2.30mm Width)
Output Type: Open Drain
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 125°C (TA)
Supplier Device Package: US8
Channel Type: Bidirectional
Translator Type: Voltage Level
Channels per Circuit: 2
Voltage - VCCA: 1 V ~ 3.6 V
Voltage - VCCB: 1.8 V ~ 5.5 V
Part Status: Active
Number of Circuits: 1
Description: IC TRANSLATOR BIDIRECTIONAL US8
Packaging: Cut Tape (CT)
Features: Auto-Direction Sensing
Package / Case: 8-VFSOP (0.091", 2.30mm Width)
Output Type: Open Drain
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 125°C (TA)
Supplier Device Package: US8
Channel Type: Bidirectional
Translator Type: Voltage Level
Channels per Circuit: 2
Voltage - VCCA: 1 V ~ 3.6 V
Voltage - VCCB: 1.8 V ~ 5.5 V
Part Status: Active
Number of Circuits: 1
на замовлення 1098 шт:
термін постачання 21-31 дні (днів)| Кількість | Ціна |
|---|---|
| 5+ | 73.59 грн |
| 10+ | 62.29 грн |
| 25+ | 58.47 грн |
| 100+ | 44.80 грн |
| 250+ | 41.60 грн |
| 500+ | 35.41 грн |
| 1000+ | 27.86 грн |
| NCP361MUTBG |
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Виробник: onsemi
Description: TVS DEVICE MIXED 6-UDFN
Packaging: Cut Tape (CT)
Package / Case: 6-UDFN Exposed Pad
Mounting Type: Surface Mount
Applications: General Purpose
Technology: Mixed Technology
Supplier Device Package: 6-UDFN (2x2)
Part Status: Active
Number of Circuits: 1
Description: TVS DEVICE MIXED 6-UDFN
Packaging: Cut Tape (CT)
Package / Case: 6-UDFN Exposed Pad
Mounting Type: Surface Mount
Applications: General Purpose
Technology: Mixed Technology
Supplier Device Package: 6-UDFN (2x2)
Part Status: Active
Number of Circuits: 1
на замовлення 4633 шт:
термін постачання 21-31 дні (днів)| Кількість | Ціна |
|---|---|
| 6+ | 62.46 грн |
| 10+ | 43.84 грн |
| 100+ | 35.79 грн |
| 500+ | 27.47 грн |
| 1000+ | 26.00 грн |
| NCV303LSN42T1G |
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Виробник: onsemi
Description: IC SUPERVISOR 1 CHANNEL SOT23-5
Packaging: Cut Tape (CT)
Package / Case: SOT-23-5 Thin, TSOT-23-5
Mounting Type: Surface Mount
Output: Open Drain or Open Collector
Type: Simple Reset/Power-On Reset
Reset: Active Low
Operating Temperature: -40°C ~ 125°C (TA)
Number of Voltages Monitored: 1
Reset Timeout: Adjustable/Selectable
Voltage - Threshold: 4.2V
Supplier Device Package: 5-TSOP
Part Status: Active
Description: IC SUPERVISOR 1 CHANNEL SOT23-5
Packaging: Cut Tape (CT)
Package / Case: SOT-23-5 Thin, TSOT-23-5
Mounting Type: Surface Mount
Output: Open Drain or Open Collector
Type: Simple Reset/Power-On Reset
Reset: Active Low
Operating Temperature: -40°C ~ 125°C (TA)
Number of Voltages Monitored: 1
Reset Timeout: Adjustable/Selectable
Voltage - Threshold: 4.2V
Supplier Device Package: 5-TSOP
Part Status: Active
на замовлення 905 шт:
термін постачання 21-31 дні (днів)| Кількість | Ціна |
|---|---|
| 5+ | 77.87 грн |
| 10+ | 66.33 грн |
| 25+ | 62.26 грн |
| 100+ | 47.69 грн |
| 250+ | 44.30 грн |
| 500+ | 37.70 грн |
| NCP432BVSNT1G |
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Виробник: onsemi
Description: IC VREF SHUNT ADJ 0.5% SOT23-3
Packaging: Cut Tape (CT)
Tolerance: ±0.5%
Package / Case: TO-236-3, SC-59, SOT-23-3
Temperature Coefficient: 50ppm/°C Typical
Output Type: Adjustable
Mounting Type: Surface Mount
Reference Type: Shunt
Operating Temperature: -40°C ~ 125°C (TA)
Supplier Device Package: SOT-23-3 (TO-236)
Voltage - Output (Min/Fixed): 2.5V
Part Status: Active
Current - Cathode: 100 mA
Current - Output: 40 µA
Voltage - Output (Max): 36 V
Description: IC VREF SHUNT ADJ 0.5% SOT23-3
Packaging: Cut Tape (CT)
Tolerance: ±0.5%
Package / Case: TO-236-3, SC-59, SOT-23-3
Temperature Coefficient: 50ppm/°C Typical
Output Type: Adjustable
Mounting Type: Surface Mount
Reference Type: Shunt
Operating Temperature: -40°C ~ 125°C (TA)
Supplier Device Package: SOT-23-3 (TO-236)
Voltage - Output (Min/Fixed): 2.5V
Part Status: Active
Current - Cathode: 100 mA
Current - Output: 40 µA
Voltage - Output (Max): 36 V
на замовлення 4263 шт:
термін постачання 21-31 дні (днів)| Кількість | Ціна |
|---|---|
| 9+ | 40.22 грн |
| 11+ | 30.90 грн |
| 25+ | 28.28 грн |
| 100+ | 17.91 грн |
| 250+ | 14.82 грн |
| 500+ | 13.58 грн |
| 1000+ | 10.02 грн |
| NVTJD4001NT1G |
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Виробник: onsemi
Description: MOSFET 2N-CH 30V 0.25A SC88
Packaging: Cut Tape (CT)
Package / Case: 6-TSSOP, SC-88, SOT-363
Mounting Type: Surface Mount
Configuration: 2 N-Channel (Dual)
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
Power - Max: 272mW
Drain to Source Voltage (Vdss): 30V
Current - Continuous Drain (Id) @ 25°C: 250mA
Input Capacitance (Ciss) (Max) @ Vds: 33pF @ 5V
Rds On (Max) @ Id, Vgs: 1.5Ohm @ 10mA, 4V
Gate Charge (Qg) (Max) @ Vgs: 1.3nC @ 5V
Vgs(th) (Max) @ Id: 1.5V @ 100µA
Supplier Device Package: SC-88/SC70-6/SOT-363
Grade: Automotive
Qualification: AEC-Q101
Description: MOSFET 2N-CH 30V 0.25A SC88
Packaging: Cut Tape (CT)
Package / Case: 6-TSSOP, SC-88, SOT-363
Mounting Type: Surface Mount
Configuration: 2 N-Channel (Dual)
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
Power - Max: 272mW
Drain to Source Voltage (Vdss): 30V
Current - Continuous Drain (Id) @ 25°C: 250mA
Input Capacitance (Ciss) (Max) @ Vds: 33pF @ 5V
Rds On (Max) @ Id, Vgs: 1.5Ohm @ 10mA, 4V
Gate Charge (Qg) (Max) @ Vgs: 1.3nC @ 5V
Vgs(th) (Max) @ Id: 1.5V @ 100µA
Supplier Device Package: SC-88/SC70-6/SOT-363
Grade: Automotive
Qualification: AEC-Q101
на замовлення 84297 шт:
термін постачання 21-31 дні (днів)| Кількість | Ціна |
|---|---|
| 10+ | 35.94 грн |
| 16+ | 20.93 грн |
| 100+ | 13.26 грн |
| 500+ | 9.33 грн |
| 1000+ | 8.32 грн |
| NTMFD4C85NT1G |
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Виробник: onsemi
Description: MOSFET 2N-CH 30V 15.4A 8DFN
Packaging: Cut Tape (CT)
Package / Case: 8-PowerTDFN
Mounting Type: Surface Mount
Configuration: 2 N-Channel (Dual) Asymmetrical
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
Power - Max: 1.13W
Drain to Source Voltage (Vdss): 30V
Current - Continuous Drain (Id) @ 25°C: 15.4A, 29.7A
Input Capacitance (Ciss) (Max) @ Vds: 1960pF @ 15V
Rds On (Max) @ Id, Vgs: 3mOhm @ 20A, 10V
Gate Charge (Qg) (Max) @ Vgs: 32nC @ 10V
Vgs(th) (Max) @ Id: 2.1V @ 250µA
Supplier Device Package: 8-DFN (5x6)
Description: MOSFET 2N-CH 30V 15.4A 8DFN
Packaging: Cut Tape (CT)
Package / Case: 8-PowerTDFN
Mounting Type: Surface Mount
Configuration: 2 N-Channel (Dual) Asymmetrical
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
Power - Max: 1.13W
Drain to Source Voltage (Vdss): 30V
Current - Continuous Drain (Id) @ 25°C: 15.4A, 29.7A
Input Capacitance (Ciss) (Max) @ Vds: 1960pF @ 15V
Rds On (Max) @ Id, Vgs: 3mOhm @ 20A, 10V
Gate Charge (Qg) (Max) @ Vgs: 32nC @ 10V
Vgs(th) (Max) @ Id: 2.1V @ 250µA
Supplier Device Package: 8-DFN (5x6)
товару немає в наявності
В кошику
од. на суму грн.
| 3LN01C-TB-E |
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Виробник: onsemi
Description: MOSFET N-CH 30V 150MA 3CP
Description: MOSFET N-CH 30V 150MA 3CP
товару немає в наявності
В кошику
од. на суму грн.
| NTMFS4C03NT1G |
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Виробник: onsemi
Description: MOSFET N-CH 30V 30A/136A 5DFN
Packaging: Cut Tape (CT)
Package / Case: 8-PowerTDFN, 5 Leads
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 30A (Ta), 136A (Tc)
Rds On (Max) @ Id, Vgs: 2.1mOhm @ 30A, 10V
Power Dissipation (Max): 3.1W (Ta), 64W (Tc)
Vgs(th) (Max) @ Id: 2.2V @ 250µA
Supplier Device Package: 5-DFN (5x6) (8-SOFL)
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 30 V
Gate Charge (Qg) (Max) @ Vgs: 45.2 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 3071 pF @ 15 V
Description: MOSFET N-CH 30V 30A/136A 5DFN
Packaging: Cut Tape (CT)
Package / Case: 8-PowerTDFN, 5 Leads
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 30A (Ta), 136A (Tc)
Rds On (Max) @ Id, Vgs: 2.1mOhm @ 30A, 10V
Power Dissipation (Max): 3.1W (Ta), 64W (Tc)
Vgs(th) (Max) @ Id: 2.2V @ 250µA
Supplier Device Package: 5-DFN (5x6) (8-SOFL)
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 30 V
Gate Charge (Qg) (Max) @ Vgs: 45.2 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 3071 pF @ 15 V
на замовлення 3624 шт:
термін постачання 21-31 дні (днів)| Кількість | Ціна |
|---|---|
| 3+ | 140.33 грн |
| 10+ | 85.69 грн |
| 100+ | 57.47 грн |
| 500+ | 42.59 грн |
| NTMFS4C13NT1G |
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на замовлення 81 шт:
термін постачання 21-31 дні (днів)| Кількість | Ціна |
|---|---|
| 8+ | 47.06 грн |
| 10+ | 39.22 грн |
| NTTFS4C05NTAG |
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Виробник: onsemi
Description: MOSFET N-CH 30V 12A/75A 8WDFN
Packaging: Cut Tape (CT)
Package / Case: 8-PowerWDFN
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 12A (Ta), 75A (Tc)
Rds On (Max) @ Id, Vgs: 3.6mOhm @ 30A, 10V
Power Dissipation (Max): 820mW (Ta), 33W (Tc)
Vgs(th) (Max) @ Id: 2.2V @ 250µA
Supplier Device Package: 8-WDFN (3.3x3.3)
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 30 V
Gate Charge (Qg) (Max) @ Vgs: 31 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 1988 pF @ 15 V
Description: MOSFET N-CH 30V 12A/75A 8WDFN
Packaging: Cut Tape (CT)
Package / Case: 8-PowerWDFN
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 12A (Ta), 75A (Tc)
Rds On (Max) @ Id, Vgs: 3.6mOhm @ 30A, 10V
Power Dissipation (Max): 820mW (Ta), 33W (Tc)
Vgs(th) (Max) @ Id: 2.2V @ 250µA
Supplier Device Package: 8-WDFN (3.3x3.3)
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 30 V
Gate Charge (Qg) (Max) @ Vgs: 31 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 1988 pF @ 15 V
на замовлення 709 шт:
термін постачання 21-31 дні (днів)| Кількість | Ціна |
|---|---|
| 4+ | 94.12 грн |
| 10+ | 56.94 грн |
| 100+ | 38.22 грн |
| 500+ | 28.29 грн |
| NVMFS5C404NLWFT1G |
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Виробник: onsemi
Description: MOSFET N-CH 40V 49A/352A 5DFN
Packaging: Cut Tape (CT)
Package / Case: 8-PowerTDFN, 5 Leads
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 49A (Ta), 352A (Tc)
Rds On (Max) @ Id, Vgs: 0.75mOhm @ 50A, 10V
Power Dissipation (Max): 3.9W (Ta), 200W (Tc)
Vgs(th) (Max) @ Id: 2V @ 250µA
Supplier Device Package: 5-DFN (5x6) (8-SOFL)
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 40 V
Gate Charge (Qg) (Max) @ Vgs: 181 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 12168 pF @ 25 V
Grade: Automotive
Qualification: AEC-Q101
Description: MOSFET N-CH 40V 49A/352A 5DFN
Packaging: Cut Tape (CT)
Package / Case: 8-PowerTDFN, 5 Leads
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 49A (Ta), 352A (Tc)
Rds On (Max) @ Id, Vgs: 0.75mOhm @ 50A, 10V
Power Dissipation (Max): 3.9W (Ta), 200W (Tc)
Vgs(th) (Max) @ Id: 2V @ 250µA
Supplier Device Package: 5-DFN (5x6) (8-SOFL)
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 40 V
Gate Charge (Qg) (Max) @ Vgs: 181 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 12168 pF @ 25 V
Grade: Automotive
Qualification: AEC-Q101
на замовлення 1288 шт:
термін постачання 21-31 дні (днів)| Кількість | Ціна |
|---|---|
| 1+ | 499.71 грн |
| 10+ | 324.89 грн |
| 100+ | 240.57 грн |
| 5HP01M-TL-H |
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Виробник: onsemi
Description: MOSFET P-CH 50V 70MA 3MCP
Description: MOSFET P-CH 50V 70MA 3MCP
товару немає в наявності
В кошику
од. на суму грн.
| 6HP04CH-TL-W |
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Виробник: onsemi
Description: MOSFET P-CH 60V 370MA 3CPH
Packaging: Cut Tape (CT)
Package / Case: TO-236-3, SC-59, SOT-23-3
Mounting Type: Surface Mount
Operating Temperature: 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: P-Channel
Current - Continuous Drain (Id) @ 25°C: 370mA (Ta)
Rds On (Max) @ Id, Vgs: 4.2Ohm @ 190mA, 10V
Supplier Device Package: 3-CPH
Part Status: Obsolete
Drive Voltage (Max Rds On, Min Rds On): 4V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 60 V
Gate Charge (Qg) (Max) @ Vgs: 0.84 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 24.1 pF @ 20 V
Description: MOSFET P-CH 60V 370MA 3CPH
Packaging: Cut Tape (CT)
Package / Case: TO-236-3, SC-59, SOT-23-3
Mounting Type: Surface Mount
Operating Temperature: 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: P-Channel
Current - Continuous Drain (Id) @ 25°C: 370mA (Ta)
Rds On (Max) @ Id, Vgs: 4.2Ohm @ 190mA, 10V
Supplier Device Package: 3-CPH
Part Status: Obsolete
Drive Voltage (Max Rds On, Min Rds On): 4V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 60 V
Gate Charge (Qg) (Max) @ Vgs: 0.84 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 24.1 pF @ 20 V
товару немає в наявності
В кошику
од. на суму грн.
| NCT75MNR2G |
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Виробник: onsemi
Description: SENSOR DIGITAL -55C-125C 8DFN
Packaging: Cut Tape (CT)
Features: One-Shot, Output Switch, Programmable Limit, Shutdown Mode
Package / Case: 8-VFDFN Exposed Pad
Output Type: I2C/SMBus
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 125°C
Voltage - Supply: 3V ~ 5.5V
Sensor Type: Digital, Local
Resolution: 11 b
Supplier Device Package: 8-DFN (2x2)
Test Condition: 0°C ~ 70°C (-55°C ~ 125°C)
Accuracy - Highest (Lowest): ±1°C (±3°C)
Sensing Temperature - Local: -55°C ~ 125°C
Description: SENSOR DIGITAL -55C-125C 8DFN
Packaging: Cut Tape (CT)
Features: One-Shot, Output Switch, Programmable Limit, Shutdown Mode
Package / Case: 8-VFDFN Exposed Pad
Output Type: I2C/SMBus
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 125°C
Voltage - Supply: 3V ~ 5.5V
Sensor Type: Digital, Local
Resolution: 11 b
Supplier Device Package: 8-DFN (2x2)
Test Condition: 0°C ~ 70°C (-55°C ~ 125°C)
Accuracy - Highest (Lowest): ±1°C (±3°C)
Sensing Temperature - Local: -55°C ~ 125°C
на замовлення 2355 шт:
термін постачання 21-31 дні (днів)| Кількість | Ціна |
|---|---|
| 4+ | 100.97 грн |
| 10+ | 59.41 грн |
| 25+ | 49.54 грн |
| 100+ | 36.02 грн |
| 250+ | 30.87 грн |
| 500+ | 27.70 грн |
| 1000+ | 24.64 грн |
| SMBT3904DW1T1G |
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Виробник: onsemi
Description: TRANS 2NPN 40V 200MA SC88/SC70
Packaging: Cut Tape (CT)
Package / Case: 6-TSSOP, SC-88, SOT-363
Mounting Type: Surface Mount
Transistor Type: 2 NPN (Dual)
Operating Temperature: -55°C ~ 150°C (TJ)
Power - Max: 150mW
Current - Collector (Ic) (Max): 200mA
Voltage - Collector Emitter Breakdown (Max): 40V
Vce Saturation (Max) @ Ib, Ic: 300mV @ 5mA, 50mA
DC Current Gain (hFE) (Min) @ Ic, Vce: 100 @ 10mA, 1V
Frequency - Transition: 300MHz
Supplier Device Package: SC-88/SC70-6/SOT-363
Part Status: Active
Description: TRANS 2NPN 40V 200MA SC88/SC70
Packaging: Cut Tape (CT)
Package / Case: 6-TSSOP, SC-88, SOT-363
Mounting Type: Surface Mount
Transistor Type: 2 NPN (Dual)
Operating Temperature: -55°C ~ 150°C (TJ)
Power - Max: 150mW
Current - Collector (Ic) (Max): 200mA
Voltage - Collector Emitter Breakdown (Max): 40V
Vce Saturation (Max) @ Ib, Ic: 300mV @ 5mA, 50mA
DC Current Gain (hFE) (Min) @ Ic, Vce: 100 @ 10mA, 1V
Frequency - Transition: 300MHz
Supplier Device Package: SC-88/SC70-6/SOT-363
Part Status: Active
на замовлення 4106 шт:
термін постачання 21-31 дні (днів)| Кількість | Ціна |
|---|---|
| 13+ | 27.38 грн |
| 19+ | 18.04 грн |
| 100+ | 14.39 грн |
| 500+ | 10.14 грн |
| 1000+ | 9.06 грн |
| NSM6056MT1G |
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Виробник: onsemi
Description: TRANS NPN 40V 0.6A SC74
Packaging: Cut Tape (CT)
Package / Case: SC-74, SOT-457
Mounting Type: Surface Mount
Transistor Type: NPN + Zener Diode (Isolated)
Operating Temperature: -55°C ~ 150°C (TJ)
Vce Saturation (Max) @ Ib, Ic: 750mV @ 50mA, 500mA
DC Current Gain (hFE) (Min) @ Ic, Vce: 100 @ 150mA, 1V
Frequency - Transition: 250MHz
Supplier Device Package: SC-74
Part Status: Active
Current - Collector (Ic) (Max): 600 mA
Voltage - Collector Emitter Breakdown (Max): 40 V
Power - Max: 380 mW
Description: TRANS NPN 40V 0.6A SC74
Packaging: Cut Tape (CT)
Package / Case: SC-74, SOT-457
Mounting Type: Surface Mount
Transistor Type: NPN + Zener Diode (Isolated)
Operating Temperature: -55°C ~ 150°C (TJ)
Vce Saturation (Max) @ Ib, Ic: 750mV @ 50mA, 500mA
DC Current Gain (hFE) (Min) @ Ic, Vce: 100 @ 150mA, 1V
Frequency - Transition: 250MHz
Supplier Device Package: SC-74
Part Status: Active
Current - Collector (Ic) (Max): 600 mA
Voltage - Collector Emitter Breakdown (Max): 40 V
Power - Max: 380 mW
на замовлення 8679 шт:
термін постачання 21-31 дні (днів)| Кількість | Ціна |
|---|---|
| 17+ | 20.54 грн |
| 25+ | 13.60 грн |
| 100+ | 9.17 грн |
| 500+ | 6.61 грн |
| 1000+ | 5.95 грн |
| CPH3216-TL-E |
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Виробник: onsemi
Description: TRANS NPN 50V 1A 3CPH
Packaging: Cut Tape (CT)
Package / Case: TO-236-3, SC-59, SOT-23-3
Mounting Type: Surface Mount
Transistor Type: NPN
Operating Temperature: 150°C (TJ)
Vce Saturation (Max) @ Ib, Ic: 190mV @ 10mA, 500mA
Current - Collector Cutoff (Max): 100nA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce: 200 @ 100mA, 2V
Frequency - Transition: 420MHz
Supplier Device Package: 3-CPH
Current - Collector (Ic) (Max): 1 A
Voltage - Collector Emitter Breakdown (Max): 50 V
Power - Max: 900 mW
Description: TRANS NPN 50V 1A 3CPH
Packaging: Cut Tape (CT)
Package / Case: TO-236-3, SC-59, SOT-23-3
Mounting Type: Surface Mount
Transistor Type: NPN
Operating Temperature: 150°C (TJ)
Vce Saturation (Max) @ Ib, Ic: 190mV @ 10mA, 500mA
Current - Collector Cutoff (Max): 100nA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce: 200 @ 100mA, 2V
Frequency - Transition: 420MHz
Supplier Device Package: 3-CPH
Current - Collector (Ic) (Max): 1 A
Voltage - Collector Emitter Breakdown (Max): 50 V
Power - Max: 900 mW
на замовлення 2824 шт:
термін постачання 21-31 дні (днів)| Кількість | Ціна |
|---|---|
| 9+ | 41.07 грн |
| 11+ | 30.90 грн |
| 100+ | 18.55 грн |
| 500+ | 16.12 грн |
| 1000+ | 10.96 грн |
| 2SD1624S-TD-E |
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Виробник: onsemi
Description: TRANS NPN 50V 3A PCP
Packaging: Cut Tape (CT)
Package / Case: TO-243AA
Mounting Type: Surface Mount
Transistor Type: NPN
Operating Temperature: 150°C (TJ)
Vce Saturation (Max) @ Ib, Ic: 500mV @ 100mA, 2A
Current - Collector Cutoff (Max): 1µA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce: 140 @ 100mA, 2V
Frequency - Transition: 150MHz
Supplier Device Package: PCP
Part Status: Active
Current - Collector (Ic) (Max): 3 A
Voltage - Collector Emitter Breakdown (Max): 50 V
Power - Max: 500 mW
Description: TRANS NPN 50V 3A PCP
Packaging: Cut Tape (CT)
Package / Case: TO-243AA
Mounting Type: Surface Mount
Transistor Type: NPN
Operating Temperature: 150°C (TJ)
Vce Saturation (Max) @ Ib, Ic: 500mV @ 100mA, 2A
Current - Collector Cutoff (Max): 1µA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce: 140 @ 100mA, 2V
Frequency - Transition: 150MHz
Supplier Device Package: PCP
Part Status: Active
Current - Collector (Ic) (Max): 3 A
Voltage - Collector Emitter Breakdown (Max): 50 V
Power - Max: 500 mW
на замовлення 1892 шт:
термін постачання 21-31 дні (днів)| Кількість | Ціна |
|---|---|
| 5+ | 72.73 грн |
| 10+ | 43.51 грн |
| 100+ | 28.38 грн |
| 500+ | 20.52 грн |
| SBC846BWT1G |
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Виробник: onsemi
Description: TRANS NPN 65V 0.1A SC70-3
Packaging: Cut Tape (CT)
Package / Case: SC-70, SOT-323
Mounting Type: Surface Mount
Transistor Type: NPN
Operating Temperature: -55°C ~ 150°C (TJ)
Vce Saturation (Max) @ Ib, Ic: 600mV @ 5mA, 100mA
Current - Collector Cutoff (Max): 15nA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce: 200 @ 2mA, 5V
Frequency - Transition: 100MHz
Supplier Device Package: SC-70-3 (SOT323)
Part Status: Active
Current - Collector (Ic) (Max): 100 mA
Voltage - Collector Emitter Breakdown (Max): 65 V
Power - Max: 150 mW
Grade: Automotive
Qualification: AEC-Q101
Description: TRANS NPN 65V 0.1A SC70-3
Packaging: Cut Tape (CT)
Package / Case: SC-70, SOT-323
Mounting Type: Surface Mount
Transistor Type: NPN
Operating Temperature: -55°C ~ 150°C (TJ)
Vce Saturation (Max) @ Ib, Ic: 600mV @ 5mA, 100mA
Current - Collector Cutoff (Max): 15nA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce: 200 @ 2mA, 5V
Frequency - Transition: 100MHz
Supplier Device Package: SC-70-3 (SOT323)
Part Status: Active
Current - Collector (Ic) (Max): 100 mA
Voltage - Collector Emitter Breakdown (Max): 65 V
Power - Max: 150 mW
Grade: Automotive
Qualification: AEC-Q101
на замовлення 29516 шт:
термін постачання 21-31 дні (днів)| Кількість | Ціна |
|---|---|
| 29+ | 11.98 грн |
| 46+ | 7.25 грн |
| 100+ | 4.48 грн |
| 500+ | 3.06 грн |
| 1000+ | 2.68 грн |
| CPH6003A-TL-E |
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Виробник: onsemi
Description: RF TRANS NPN 12V 7GHZ 6-CPH
Packaging: Cut Tape (CT)
Package / Case: SOT-23-6 Thin, TSOT-23-6
Mounting Type: Surface Mount
Transistor Type: NPN
Operating Temperature: 150°C (TJ)
Gain: 9dB
Power - Max: 800mW
Current - Collector (Ic) (Max): 150mA
Voltage - Collector Emitter Breakdown (Max): 12V
DC Current Gain (hFE) (Min) @ Ic, Vce: 100 @ 50mA, 5V
Frequency - Transition: 7GHz
Noise Figure (dB Typ @ f): 1.8dB @ 1GHz
Supplier Device Package: 6-CPH
Description: RF TRANS NPN 12V 7GHZ 6-CPH
Packaging: Cut Tape (CT)
Package / Case: SOT-23-6 Thin, TSOT-23-6
Mounting Type: Surface Mount
Transistor Type: NPN
Operating Temperature: 150°C (TJ)
Gain: 9dB
Power - Max: 800mW
Current - Collector (Ic) (Max): 150mA
Voltage - Collector Emitter Breakdown (Max): 12V
DC Current Gain (hFE) (Min) @ Ic, Vce: 100 @ 50mA, 5V
Frequency - Transition: 7GHz
Noise Figure (dB Typ @ f): 1.8dB @ 1GHz
Supplier Device Package: 6-CPH
на замовлення 192845 шт:
термін постачання 21-31 дні (днів)| Кількість | Ціна |
|---|---|
| 6+ | 64.17 грн |
| 10+ | 38.31 грн |
| 100+ | 24.79 грн |
| 500+ | 17.77 грн |
| 1000+ | 16.01 грн |
| 2SC5227A-5-TB-E |
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Виробник: onsemi
Description: RF TRANS NPN 10V 7GHZ 3-CP
Packaging: Cut Tape (CT)
Package / Case: TO-236-3, SC-59, SOT-23-3
Mounting Type: Surface Mount
Transistor Type: NPN
Operating Temperature: 150°C (TJ)
Gain: 12dB
Power - Max: 200mW
Current - Collector (Ic) (Max): 70mA
Voltage - Collector Emitter Breakdown (Max): 10V
DC Current Gain (hFE) (Min) @ Ic, Vce: 135 @ 20mA, 5V
Frequency - Transition: 7GHz
Noise Figure (dB Typ @ f): 1dB @ 1GHz
Supplier Device Package: 3-CP
Description: RF TRANS NPN 10V 7GHZ 3-CP
Packaging: Cut Tape (CT)
Package / Case: TO-236-3, SC-59, SOT-23-3
Mounting Type: Surface Mount
Transistor Type: NPN
Operating Temperature: 150°C (TJ)
Gain: 12dB
Power - Max: 200mW
Current - Collector (Ic) (Max): 70mA
Voltage - Collector Emitter Breakdown (Max): 10V
DC Current Gain (hFE) (Min) @ Ic, Vce: 135 @ 20mA, 5V
Frequency - Transition: 7GHz
Noise Figure (dB Typ @ f): 1dB @ 1GHz
Supplier Device Package: 3-CP
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| 2SC5226A-5-TL-E |
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Виробник: onsemi
Description: RF TRANS NPN 10V 7GHZ 3MCP
Packaging: Cut Tape (CT)
Package / Case: SC-70, SOT-323
Mounting Type: Surface Mount
Transistor Type: NPN
Operating Temperature: 150°C (TJ)
Gain: 12dB
Power - Max: 150mW
Current - Collector (Ic) (Max): 70mA
Voltage - Collector Emitter Breakdown (Max): 10V
DC Current Gain (hFE) (Min) @ Ic, Vce: 135 @ 20mA, 5V
Frequency - Transition: 7GHz
Noise Figure (dB Typ @ f): 1dB @ 1GHz
Supplier Device Package: 3-MCP
Part Status: Active
Description: RF TRANS NPN 10V 7GHZ 3MCP
Packaging: Cut Tape (CT)
Package / Case: SC-70, SOT-323
Mounting Type: Surface Mount
Transistor Type: NPN
Operating Temperature: 150°C (TJ)
Gain: 12dB
Power - Max: 150mW
Current - Collector (Ic) (Max): 70mA
Voltage - Collector Emitter Breakdown (Max): 10V
DC Current Gain (hFE) (Min) @ Ic, Vce: 135 @ 20mA, 5V
Frequency - Transition: 7GHz
Noise Figure (dB Typ @ f): 1dB @ 1GHz
Supplier Device Package: 3-MCP
Part Status: Active
на замовлення 41991 шт:
термін постачання 21-31 дні (днів)| Кількість | Ціна |
|---|---|
| 10+ | 35.94 грн |
| 13+ | 26.78 грн |
| 100+ | 16.05 грн |
| 500+ | 13.95 грн |
| 1000+ | 9.48 грн |
| NSVMUN5332DW1T1G |
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Виробник: onsemi
Description: TRANS PREBIAS 1NPN 1PNP SOT-363
Packaging: Cut Tape (CT)
Package / Case: 6-TSSOP, SC-88, SOT-363
Mounting Type: Surface Mount
Transistor Type: 1 NPN, 1 PNP - Pre-Biased (Dual)
Power - Max: 250mW
Current - Collector (Ic) (Max): 100mA
Voltage - Collector Emitter Breakdown (Max): 50V
Vce Saturation (Max) @ Ib, Ic: 250mV @ 1mA, 10mA
Current - Collector Cutoff (Max): 500nA
DC Current Gain (hFE) (Min) @ Ic, Vce: 15 @ 5mA, 10V
Resistor - Base (R1): 4.7kOhms
Resistor - Emitter Base (R2): 4.7kOhms
Supplier Device Package: SC-88/SC70-6/SOT-363
Grade: Automotive
Qualification: AEC-Q101
Description: TRANS PREBIAS 1NPN 1PNP SOT-363
Packaging: Cut Tape (CT)
Package / Case: 6-TSSOP, SC-88, SOT-363
Mounting Type: Surface Mount
Transistor Type: 1 NPN, 1 PNP - Pre-Biased (Dual)
Power - Max: 250mW
Current - Collector (Ic) (Max): 100mA
Voltage - Collector Emitter Breakdown (Max): 50V
Vce Saturation (Max) @ Ib, Ic: 250mV @ 1mA, 10mA
Current - Collector Cutoff (Max): 500nA
DC Current Gain (hFE) (Min) @ Ic, Vce: 15 @ 5mA, 10V
Resistor - Base (R1): 4.7kOhms
Resistor - Emitter Base (R2): 4.7kOhms
Supplier Device Package: SC-88/SC70-6/SOT-363
Grade: Automotive
Qualification: AEC-Q101
на замовлення 515 шт:
термін постачання 21-31 дні (днів)| Кількість | Ціна |
|---|---|
| 18+ | 19.68 грн |
| 29+ | 11.54 грн |
| 100+ | 7.19 грн |
| 500+ | 4.96 грн |
| SMUN5211T1G |
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Виробник: onsemi
Description: TRANS PREBIAS NPN 50V SC70-3
Packaging: Cut Tape (CT)
Package / Case: SC-70, SOT-323
Mounting Type: Surface Mount
Transistor Type: NPN - Pre-Biased
Vce Saturation (Max) @ Ib, Ic: 250mV @ 300µA, 10mA
Current - Collector Cutoff (Max): 500nA
DC Current Gain (hFE) (Min) @ Ic, Vce: 35 @ 5mA, 10V
Supplier Device Package: SC-70-3 (SOT323)
Current - Collector (Ic) (Max): 100 mA
Voltage - Collector Emitter Breakdown (Max): 50 V
Power - Max: 202 mW
Resistor - Base (R1): 10 kOhms
Resistor - Emitter Base (R2): 10 kOhms
Grade: Automotive
Qualification: AEC-Q101
Resistors Included: R1 and R2
Description: TRANS PREBIAS NPN 50V SC70-3
Packaging: Cut Tape (CT)
Package / Case: SC-70, SOT-323
Mounting Type: Surface Mount
Transistor Type: NPN - Pre-Biased
Vce Saturation (Max) @ Ib, Ic: 250mV @ 300µA, 10mA
Current - Collector Cutoff (Max): 500nA
DC Current Gain (hFE) (Min) @ Ic, Vce: 35 @ 5mA, 10V
Supplier Device Package: SC-70-3 (SOT323)
Current - Collector (Ic) (Max): 100 mA
Voltage - Collector Emitter Breakdown (Max): 50 V
Power - Max: 202 mW
Resistor - Base (R1): 10 kOhms
Resistor - Emitter Base (R2): 10 kOhms
Grade: Automotive
Qualification: AEC-Q101
Resistors Included: R1 and R2
на замовлення 60272 шт:
термін постачання 21-31 дні (днів)| Кількість | Ціна |
|---|---|
| 24+ | 14.55 грн |
| 39+ | 8.49 грн |
| 100+ | 5.25 грн |
| 500+ | 3.58 грн |
| 1000+ | 3.15 грн |
| MUN5133T1G |
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Виробник: onsemi
Description: TRANS PREBIAS PNP 50V SC70-3
Description: TRANS PREBIAS PNP 50V SC70-3
на замовлення 15259 шт:
термін постачання 21-31 дні (днів)| Кількість | Ціна |
|---|---|
| 23+ | 15.40 грн |
| 24+ | 13.84 грн |
| 100+ | 7.52 грн |
| 500+ | 4.35 грн |
| 1000+ | 2.96 грн |
| NUP2115LT1G |
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Виробник: onsemi
Description: TVS DIODE 24VWM 50VC SOT23-3
Packaging: Cut Tape (CT)
Package / Case: TO-236-3, SC-59, SOT-23-3
Mounting Type: Surface Mount
Type: Zener
Operating Temperature: -55°C ~ 150°C (TJ)
Applications: Automotive
Capacitance @ Frequency: 10pF @ 1MHz
Current - Peak Pulse (10/1000µs): 3A (8/20µs)
Voltage - Reverse Standoff (Typ): 24V (Min)
Supplier Device Package: SOT-23-3 (TO-236)
Bidirectional Channels: 2
Voltage - Breakdown (Min): 26.2V
Voltage - Clamping (Max) @ Ipp: 50V
Power - Peak Pulse: 200W
Power Line Protection: No
Description: TVS DIODE 24VWM 50VC SOT23-3
Packaging: Cut Tape (CT)
Package / Case: TO-236-3, SC-59, SOT-23-3
Mounting Type: Surface Mount
Type: Zener
Operating Temperature: -55°C ~ 150°C (TJ)
Applications: Automotive
Capacitance @ Frequency: 10pF @ 1MHz
Current - Peak Pulse (10/1000µs): 3A (8/20µs)
Voltage - Reverse Standoff (Typ): 24V (Min)
Supplier Device Package: SOT-23-3 (TO-236)
Bidirectional Channels: 2
Voltage - Breakdown (Min): 26.2V
Voltage - Clamping (Max) @ Ipp: 50V
Power - Peak Pulse: 200W
Power Line Protection: No
на замовлення 53571 шт:
термін постачання 21-31 дні (днів)| Кількість | Ціна |
|---|---|
| 6+ | 59.90 грн |
| 10+ | 50.34 грн |
| 100+ | 34.83 грн |
| 500+ | 27.31 грн |
| 1000+ | 23.24 грн |
| ESD7451N2T5G |
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Виробник: onsemi
Description: TVS DIODE 3.3VWM 2XDFN
Packaging: Cut Tape (CT)
Package / Case: 2-XDFN
Mounting Type: Surface Mount
Type: Zener
Operating Temperature: -55°C ~ 150°C (TJ)
Applications: RF Antenna
Capacitance @ Frequency: 0.25pF @ 1MHz
Voltage - Reverse Standoff (Typ): 3.3V (Max)
Supplier Device Package: 2-XDFN (1x0.6) (SOD-882)
Bidirectional Channels: 1
Voltage - Breakdown (Min): 6V (Typ)
Power Line Protection: No
Grade: Automotive
Qualification: AEC-Q101
Description: TVS DIODE 3.3VWM 2XDFN
Packaging: Cut Tape (CT)
Package / Case: 2-XDFN
Mounting Type: Surface Mount
Type: Zener
Operating Temperature: -55°C ~ 150°C (TJ)
Applications: RF Antenna
Capacitance @ Frequency: 0.25pF @ 1MHz
Voltage - Reverse Standoff (Typ): 3.3V (Max)
Supplier Device Package: 2-XDFN (1x0.6) (SOD-882)
Bidirectional Channels: 1
Voltage - Breakdown (Min): 6V (Typ)
Power Line Protection: No
Grade: Automotive
Qualification: AEC-Q101
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од. на суму грн.
| ESDR0502NMUTAG |
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Виробник: onsemi
Description: TVS DIODE 5.5VWM 6UDFN
Packaging: Cut Tape (CT)
Package / Case: 6-UFDFN
Mounting Type: Surface Mount
Type: Steering (Rail to Rail)
Operating Temperature: -40°C ~ 125°C (TJ)
Applications: Ethernet
Capacitance @ Frequency: 0.3pF @ 1MHz
Voltage - Reverse Standoff (Typ): 5.5V (Max)
Supplier Device Package: 6-UDFN (1.2x1)
Unidirectional Channels: 3
Voltage - Breakdown (Min): 6V
Power - Peak Pulse: 100W
Power Line Protection: Yes
Description: TVS DIODE 5.5VWM 6UDFN
Packaging: Cut Tape (CT)
Package / Case: 6-UFDFN
Mounting Type: Surface Mount
Type: Steering (Rail to Rail)
Operating Temperature: -40°C ~ 125°C (TJ)
Applications: Ethernet
Capacitance @ Frequency: 0.3pF @ 1MHz
Voltage - Reverse Standoff (Typ): 5.5V (Max)
Supplier Device Package: 6-UDFN (1.2x1)
Unidirectional Channels: 3
Voltage - Breakdown (Min): 6V
Power - Peak Pulse: 100W
Power Line Protection: Yes
на замовлення 8752 шт:
термін постачання 21-31 дні (днів)| Кількість | Ціна |
|---|---|
| 12+ | 30.80 грн |
| 19+ | 18.13 грн |
| 100+ | 11.39 грн |
| 500+ | 7.95 грн |
| 1000+ | 7.06 грн |
| ESD7421N2T5G |
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Виробник: onsemi
Description: TVS DIODE 5VWM 38.1VC 2XDFN
Packaging: Cut Tape (CT)
Package / Case: 2-XDFN
Mounting Type: Surface Mount
Type: Zener
Operating Temperature: -55°C ~ 150°C (TJ)
Applications: General Purpose
Capacitance @ Frequency: 0.3pF @ 1MHz
Current - Peak Pulse (10/1000µs): 16A (100ns)
Voltage - Reverse Standoff (Typ): 5V
Supplier Device Package: 2-XDFN (1x0.6) (SOD-882)
Bidirectional Channels: 1
Voltage - Breakdown (Min): 10.5V
Voltage - Clamping (Max) @ Ipp: 38.1V
Power Line Protection: No
Part Status: Active
Description: TVS DIODE 5VWM 38.1VC 2XDFN
Packaging: Cut Tape (CT)
Package / Case: 2-XDFN
Mounting Type: Surface Mount
Type: Zener
Operating Temperature: -55°C ~ 150°C (TJ)
Applications: General Purpose
Capacitance @ Frequency: 0.3pF @ 1MHz
Current - Peak Pulse (10/1000µs): 16A (100ns)
Voltage - Reverse Standoff (Typ): 5V
Supplier Device Package: 2-XDFN (1x0.6) (SOD-882)
Bidirectional Channels: 1
Voltage - Breakdown (Min): 10.5V
Voltage - Clamping (Max) @ Ipp: 38.1V
Power Line Protection: No
Part Status: Active
на замовлення 1446015 шт:
термін постачання 21-31 дні (днів)| Кількість | Ціна |
|---|---|
| 8+ | 47.06 грн |
| 10+ | 38.89 грн |
| 100+ | 29.04 грн |
| 500+ | 21.41 грн |
| 1000+ | 16.54 грн |
| 2000+ | 15.08 грн |
| MC74HCT573ADWR2G |
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Виробник: onsemi
Description: IC D-TYPE TRANSP 8:8 20-SOIC
Packaging: Cut Tape (CT)
Package / Case: 20-SOIC (0.295", 7.50mm Width)
Output Type: Tri-State
Mounting Type: Surface Mount
Circuit: 8:8
Logic Type: D-Type Transparent Latch
Operating Temperature: -55°C ~ 125°C
Voltage - Supply: 4.5V ~ 5.5V
Independent Circuits: 1
Current - Output High, Low: 6mA, 6mA
Delay Time - Propagation: 30ns
Supplier Device Package: 20-SOIC
Part Status: Active
Description: IC D-TYPE TRANSP 8:8 20-SOIC
Packaging: Cut Tape (CT)
Package / Case: 20-SOIC (0.295", 7.50mm Width)
Output Type: Tri-State
Mounting Type: Surface Mount
Circuit: 8:8
Logic Type: D-Type Transparent Latch
Operating Temperature: -55°C ~ 125°C
Voltage - Supply: 4.5V ~ 5.5V
Independent Circuits: 1
Current - Output High, Low: 6mA, 6mA
Delay Time - Propagation: 30ns
Supplier Device Package: 20-SOIC
Part Status: Active
на замовлення 18990 шт:
термін постачання 21-31 дні (днів)| Кількість | Ціна |
|---|---|
| 7+ | 51.34 грн |
| 10+ | 34.94 грн |
| 25+ | 31.41 грн |
| 100+ | 25.78 грн |
| 250+ | 24.02 грн |
| 500+ | 22.96 грн |
| LV8726TA-NH |
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Виробник: onsemi
Description: IC MTR DRV BIPLR 2.7-5.5V 48TQFP
Packaging: Cut Tape (CT)
Package / Case: 48-LQFP Exposed Pad
Mounting Type: Surface Mount
Function: Controller - Current Management
Current - Output: 50mA
Interface: SPI
Operating Temperature: -40°C ~ 85°C (TA)
Output Configuration: Pre-Driver - Half Bridge (4)
Voltage - Supply: 2.7V ~ 5.5V
Applications: Printer
Technology: Power MOSFET
Voltage - Load: 9V ~ 55V
Supplier Device Package: 48-TQFP-EP (7x7)
Motor Type - Stepper: Bipolar
Step Resolution: 1/2 ~ 1/128
Description: IC MTR DRV BIPLR 2.7-5.5V 48TQFP
Packaging: Cut Tape (CT)
Package / Case: 48-LQFP Exposed Pad
Mounting Type: Surface Mount
Function: Controller - Current Management
Current - Output: 50mA
Interface: SPI
Operating Temperature: -40°C ~ 85°C (TA)
Output Configuration: Pre-Driver - Half Bridge (4)
Voltage - Supply: 2.7V ~ 5.5V
Applications: Printer
Technology: Power MOSFET
Voltage - Load: 9V ~ 55V
Supplier Device Package: 48-TQFP-EP (7x7)
Motor Type - Stepper: Bipolar
Step Resolution: 1/2 ~ 1/128
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од. на суму грн.
| NCN5110MNTWG |
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Виробник: onsemi
Description: IC TRANSCEIVER 1/1 40QFN
Packaging: Cut Tape (CT)
Package / Case: 40-VFQFN Exposed Pad
Mounting Type: Surface Mount
Type: Transceiver
Operating Temperature: -40°C ~ 105°C
Number of Drivers/Receivers: 1/1
Supplier Device Package: 40-QFN (6x6)
Part Status: Active
Description: IC TRANSCEIVER 1/1 40QFN
Packaging: Cut Tape (CT)
Package / Case: 40-VFQFN Exposed Pad
Mounting Type: Surface Mount
Type: Transceiver
Operating Temperature: -40°C ~ 105°C
Number of Drivers/Receivers: 1/1
Supplier Device Package: 40-QFN (6x6)
Part Status: Active
на замовлення 2463 шт:
термін постачання 21-31 дні (днів)| Кількість | Ціна |
|---|---|
| 1+ | 566.45 грн |
| 10+ | 364.69 грн |
| 25+ | 317.36 грн |
| 100+ | 247.68 грн |
| 250+ | 223.07 грн |
| 500+ | 213.72 грн |
| NCN5130MNTWG |
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Виробник: onsemi
Description: IC TRANSCEIVER FULL 1/1 40QFN
Packaging: Cut Tape (CT)
Package / Case: 40-VFQFN Exposed Pad
Mounting Type: Surface Mount
Type: Transceiver
Operating Temperature: -40°C ~ 105°C
Voltage - Supply: 3.13V ~ 3.47V
Number of Drivers/Receivers: 1/1
Supplier Device Package: 40-QFN (6x6)
Duplex: Full
Part Status: Active
Description: IC TRANSCEIVER FULL 1/1 40QFN
Packaging: Cut Tape (CT)
Package / Case: 40-VFQFN Exposed Pad
Mounting Type: Surface Mount
Type: Transceiver
Operating Temperature: -40°C ~ 105°C
Voltage - Supply: 3.13V ~ 3.47V
Number of Drivers/Receivers: 1/1
Supplier Device Package: 40-QFN (6x6)
Duplex: Full
Part Status: Active
на замовлення 3469 шт:
термін постачання 21-31 дні (днів)| Кількість | Ціна |
|---|---|
| 1+ | 486.87 грн |
| 10+ | 360.57 грн |
| 25+ | 333.51 грн |
| 100+ | 285.09 грн |
| 250+ | 271.79 грн |
| 500+ | 263.77 грн |
| 1000+ | 252.96 грн |
| MC100EP56DTR2G |
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Виробник: onsemi
Description: IC DIFF DIG MULTPL 2X2:1 20TSSOP
Packaging: Cut Tape (CT)
Package / Case: 20-TSSOP (0.173", 4.40mm Width)
Mounting Type: Surface Mount
Circuit: 2 x 2:1
Type: Differential Digital Multiplexer
Operating Temperature: -40°C ~ 85°C
Voltage - Supply: ±3V ~ 5.5V
Independent Circuits: 1
Voltage Supply Source: Dual Supply
Supplier Device Package: 20-TSSOP
Description: IC DIFF DIG MULTPL 2X2:1 20TSSOP
Packaging: Cut Tape (CT)
Package / Case: 20-TSSOP (0.173", 4.40mm Width)
Mounting Type: Surface Mount
Circuit: 2 x 2:1
Type: Differential Digital Multiplexer
Operating Temperature: -40°C ~ 85°C
Voltage - Supply: ±3V ~ 5.5V
Independent Circuits: 1
Voltage Supply Source: Dual Supply
Supplier Device Package: 20-TSSOP
на замовлення 1581 шт:
термін постачання 21-31 дні (днів)| Кількість | Ціна |
|---|---|
| 1+ | 1046.47 грн |
| 10+ | 695.18 грн |
| 25+ | 613.59 грн |
| 100+ | 489.31 грн |
| 250+ | 470.71 грн |
| NGTB60N65FL2WG |
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Виробник: onsemi
Description: IGBT FIELD STOP 650V 100A TO-247
Packaging: Tube
Package / Case: TO-247-3
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 175°C (TJ)
Input Type: Standard
Reverse Recovery Time (trr): 96 ns
Vce(on) (Max) @ Vge, Ic: 2V @ 15V, 60A
Supplier Device Package: TO-247-3
IGBT Type: Field Stop
Td (on/off) @ 25°C: 117ns/265ns
Switching Energy: 1.59mJ (on), 660µJ (off)
Test Condition: 400V, 60A, 10Ohm, 15V
Gate Charge: 318 nC
Part Status: Obsolete
Current - Collector (Ic) (Max): 100 A
Voltage - Collector Emitter Breakdown (Max): 650 V
Current - Collector Pulsed (Icm): 240 A
Power - Max: 595 W
Description: IGBT FIELD STOP 650V 100A TO-247
Packaging: Tube
Package / Case: TO-247-3
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 175°C (TJ)
Input Type: Standard
Reverse Recovery Time (trr): 96 ns
Vce(on) (Max) @ Vge, Ic: 2V @ 15V, 60A
Supplier Device Package: TO-247-3
IGBT Type: Field Stop
Td (on/off) @ 25°C: 117ns/265ns
Switching Energy: 1.59mJ (on), 660µJ (off)
Test Condition: 400V, 60A, 10Ohm, 15V
Gate Charge: 318 nC
Part Status: Obsolete
Current - Collector (Ic) (Max): 100 A
Voltage - Collector Emitter Breakdown (Max): 650 V
Current - Collector Pulsed (Icm): 240 A
Power - Max: 595 W
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| NCP1602AEASNT1G |
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Виробник: onsemi
Description: IC PFC CTRLR CRM 6TSOP
Packaging: Tape & Reel (TR)
Package / Case: SOT-23-6 Thin, TSOT-23-6
Mounting Type: Surface Mount
Operating Temperature: -40°C ~ 125°C
Voltage - Supply: 9.5V ~ 30V
Mode: Critical Conduction (CRM)
Supplier Device Package: 6-TSOP
Part Status: Obsolete
Current - Startup: 480 µA
Description: IC PFC CTRLR CRM 6TSOP
Packaging: Tape & Reel (TR)
Package / Case: SOT-23-6 Thin, TSOT-23-6
Mounting Type: Surface Mount
Operating Temperature: -40°C ~ 125°C
Voltage - Supply: 9.5V ~ 30V
Mode: Critical Conduction (CRM)
Supplier Device Package: 6-TSOP
Part Status: Obsolete
Current - Startup: 480 µA
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| NTMFS5H409NLT1G |
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Виробник: onsemi
Description: MOSFET N-CH 40V 41A/270A 5DFN
Packaging: Tape & Reel (TR)
Package / Case: 8-PowerTDFN, 5 Leads
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 41A (Ta), 270A (Tc)
Rds On (Max) @ Id, Vgs: 1.1mOhm @ 50A, 10V
Power Dissipation (Max): 3.2W (Ta), 140W (Tc)
Vgs(th) (Max) @ Id: 2V @ 250µA
Supplier Device Package: 5-DFN (5x6) (8-SOFL)
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 40 V
Gate Charge (Qg) (Max) @ Vgs: 89 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 5700 pF @ 20 V
Description: MOSFET N-CH 40V 41A/270A 5DFN
Packaging: Tape & Reel (TR)
Package / Case: 8-PowerTDFN, 5 Leads
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 41A (Ta), 270A (Tc)
Rds On (Max) @ Id, Vgs: 1.1mOhm @ 50A, 10V
Power Dissipation (Max): 3.2W (Ta), 140W (Tc)
Vgs(th) (Max) @ Id: 2V @ 250µA
Supplier Device Package: 5-DFN (5x6) (8-SOFL)
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 40 V
Gate Charge (Qg) (Max) @ Vgs: 89 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 5700 pF @ 20 V
на замовлення 30000 шт:
термін постачання 21-31 дні (днів)| Кількість | Ціна |
|---|---|
| 1500+ | 79.70 грн |
| 3000+ | 74.71 грн |
| NTTFS5C453NLTAG |
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Виробник: onsemi
Description: MOSFET N-CH 40V 23A/107A 8WDFN
Packaging: Tape & Reel (TR)
Package / Case: 8-PowerWDFN
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 23A (Ta), 107A (Tc)
Rds On (Max) @ Id, Vgs: 3mOhm @ 40A, 10V
Power Dissipation (Max): 3.3W (Ta), 68W (Tc)
Vgs(th) (Max) @ Id: 2V @ 250µA
Supplier Device Package: 8-WDFN (3.3x3.3)
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 40 V
Gate Charge (Qg) (Max) @ Vgs: 35 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 2100 pF @ 25 V
Description: MOSFET N-CH 40V 23A/107A 8WDFN
Packaging: Tape & Reel (TR)
Package / Case: 8-PowerWDFN
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 23A (Ta), 107A (Tc)
Rds On (Max) @ Id, Vgs: 3mOhm @ 40A, 10V
Power Dissipation (Max): 3.3W (Ta), 68W (Tc)
Vgs(th) (Max) @ Id: 2V @ 250µA
Supplier Device Package: 8-WDFN (3.3x3.3)
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 40 V
Gate Charge (Qg) (Max) @ Vgs: 35 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 2100 pF @ 25 V
на замовлення 7500 шт:
термін постачання 21-31 дні (днів)| Кількість | Ціна |
|---|---|
| 1500+ | 20.80 грн |
| 3000+ | 19.42 грн |
| 4500+ | 19.12 грн |
| 7500+ | 17.62 грн |
| NTTFS5C670NLTAG |
![]() |
Виробник: onsemi
Description: MOSFET N-CH 60V 16A/70A 8WDFN
Packaging: Tape & Reel (TR)
Package / Case: 8-PowerWDFN
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 16A (Ta), 70A (Tc)
Rds On (Max) @ Id, Vgs: 6.5mOhm @ 35A, 10V
Power Dissipation (Max): 3.2W (Ta), 63W (Tc)
Vgs(th) (Max) @ Id: 2V @ 250µA
Supplier Device Package: 8-WDFN (3.3x3.3)
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 60 V
Gate Charge (Qg) (Max) @ Vgs: 20 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 1400 pF @ 25 V
Description: MOSFET N-CH 60V 16A/70A 8WDFN
Packaging: Tape & Reel (TR)
Package / Case: 8-PowerWDFN
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 16A (Ta), 70A (Tc)
Rds On (Max) @ Id, Vgs: 6.5mOhm @ 35A, 10V
Power Dissipation (Max): 3.2W (Ta), 63W (Tc)
Vgs(th) (Max) @ Id: 2V @ 250µA
Supplier Device Package: 8-WDFN (3.3x3.3)
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 60 V
Gate Charge (Qg) (Max) @ Vgs: 20 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 1400 pF @ 25 V
на замовлення 13500 шт:
термін постачання 21-31 дні (днів)| Кількість | Ціна |
|---|---|
| 1500+ | 79.48 грн |
| 3000+ | 74.70 грн |
| 4500+ | 73.78 грн |
| 7500+ | 68.28 грн |
| NTTFS5C454NLTAG |
![]() |
Виробник: onsemi
Description: MOSFET N-CH 40V 20A/85A 8WDFN
Packaging: Tape & Reel (TR)
Package / Case: 8-PowerWDFN
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 20A (Ta), 85A (Tc)
Rds On (Max) @ Id, Vgs: 3.8mOhm @ 20A, 10V
Power Dissipation (Max): 3.2W (Ta), 55W (Tc)
Vgs(th) (Max) @ Id: 2V @ 250µA
Supplier Device Package: 8-WDFN (3.3x3.3)
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 40 V
Gate Charge (Qg) (Max) @ Vgs: 18 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 1600 pF @ 25 V
Description: MOSFET N-CH 40V 20A/85A 8WDFN
Packaging: Tape & Reel (TR)
Package / Case: 8-PowerWDFN
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 20A (Ta), 85A (Tc)
Rds On (Max) @ Id, Vgs: 3.8mOhm @ 20A, 10V
Power Dissipation (Max): 3.2W (Ta), 55W (Tc)
Vgs(th) (Max) @ Id: 2V @ 250µA
Supplier Device Package: 8-WDFN (3.3x3.3)
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 40 V
Gate Charge (Qg) (Max) @ Vgs: 18 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 1600 pF @ 25 V
на замовлення 16500 шт:
термін постачання 21-31 дні (днів)| Кількість | Ціна |
|---|---|
| 1500+ | 16.49 грн |
| 3000+ | 15.38 грн |
| 4500+ | 15.13 грн |
| 7500+ | 13.94 грн |
| 10500+ | 13.79 грн |
| 15000+ | 13.64 грн |
| NTTFS5C673NLTAG |
![]() |
Виробник: onsemi
Description: MOSFET N-CH 60V 13A/50A 8WDFN
Packaging: Tape & Reel (TR)
Package / Case: 8-PowerWDFN
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 13A (Ta), 50A (Tc)
Rds On (Max) @ Id, Vgs: 9.3mOhm @ 25A, 10V
Power Dissipation (Max): 3.1W (Ta), 46W (Tc)
Vgs(th) (Max) @ Id: 2V @ 250µA
Supplier Device Package: 8-WDFN (3.3x3.3)
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 60 V
Gate Charge (Qg) (Max) @ Vgs: 9.5 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 880 pF @ 25 V
Description: MOSFET N-CH 60V 13A/50A 8WDFN
Packaging: Tape & Reel (TR)
Package / Case: 8-PowerWDFN
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 13A (Ta), 50A (Tc)
Rds On (Max) @ Id, Vgs: 9.3mOhm @ 25A, 10V
Power Dissipation (Max): 3.1W (Ta), 46W (Tc)
Vgs(th) (Max) @ Id: 2V @ 250µA
Supplier Device Package: 8-WDFN (3.3x3.3)
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 60 V
Gate Charge (Qg) (Max) @ Vgs: 9.5 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 880 pF @ 25 V
на замовлення 25500 шт:
термін постачання 21-31 дні (днів)| Кількість | Ціна |
|---|---|
| 1500+ | 14.43 грн |
| 3000+ | 13.45 грн |
| 4500+ | 13.23 грн |
| 7500+ | 12.18 грн |
| 10500+ | 12.04 грн |
| 15000+ | 11.91 грн |
| NCP51402MNTXG |
![]() |
Виробник: onsemi
Description: IC REG LDO DDR 1OUT 10DFN
Description: IC REG LDO DDR 1OUT 10DFN
на замовлення 9000 шт:
термін постачання 21-31 дні (днів)| Кількість | Ціна |
|---|---|
| 3000+ | 57.03 грн |
| 6000+ | 52.17 грн |
| NCP81245MNTXG |
![]() |
Виробник: onsemi
Description: IC REG CTRLR IMVP8 7OUT 52QFN
Description: IC REG CTRLR IMVP8 7OUT 52QFN
товару немає в наявності
В кошику
од. на суму грн.
| NCP81151BMNTBG |
![]() |
Виробник: onsemi
Description: IC GATE DRVR HALF-BRIDGE 8DFN
Packaging: Tape & Reel (TR)
Package / Case: 8-VFDFN Exposed Pad
Mounting Type: Surface Mount
Operating Temperature: -40°C ~ 150°C (TJ)
Voltage - Supply: 4.5V ~ 5.5V
Input Type: Non-Inverting
High Side Voltage - Max (Bootstrap): 40 V
Supplier Device Package: 8-DFN (2x2)
Rise / Fall Time (Typ): 16ns, 11ns
Channel Type: Synchronous
Driven Configuration: Half-Bridge
Number of Drivers: 2
Gate Type: N-Channel MOSFET
Logic Voltage - VIL, VIH: 0.6V, 3.3V
DigiKey Programmable: Not Verified
Description: IC GATE DRVR HALF-BRIDGE 8DFN
Packaging: Tape & Reel (TR)
Package / Case: 8-VFDFN Exposed Pad
Mounting Type: Surface Mount
Operating Temperature: -40°C ~ 150°C (TJ)
Voltage - Supply: 4.5V ~ 5.5V
Input Type: Non-Inverting
High Side Voltage - Max (Bootstrap): 40 V
Supplier Device Package: 8-DFN (2x2)
Rise / Fall Time (Typ): 16ns, 11ns
Channel Type: Synchronous
Driven Configuration: Half-Bridge
Number of Drivers: 2
Gate Type: N-Channel MOSFET
Logic Voltage - VIL, VIH: 0.6V, 3.3V
DigiKey Programmable: Not Verified
товару немає в наявності
В кошику
од. на суму грн.
| NCS20032DMR2G |
![]() |
Виробник: onsemi
Description: IC OPAMP GP 2 CIRCUIT 8MSOP
Packaging: Tape & Reel (TR)
Package / Case: 8-TSSOP, 8-MSOP (0.118", 3.00mm Width)
Output Type: Rail-to-Rail
Mounting Type: Surface Mount
Amplifier Type: General Purpose
Operating Temperature: -40°C ~ 125°C
Current - Supply: 275µA (x2 Channels)
Slew Rate: 8V/µs
Gain Bandwidth Product: 7 MHz
Current - Input Bias: 1 pA
Voltage - Input Offset: 500 µV
Supplier Device Package: 8-MSOP
Part Status: Active
Number of Circuits: 2
Current - Output / Channel: 96 mA
Voltage - Supply Span (Min): 1.7 V
Voltage - Supply Span (Max): 5.5 V
Description: IC OPAMP GP 2 CIRCUIT 8MSOP
Packaging: Tape & Reel (TR)
Package / Case: 8-TSSOP, 8-MSOP (0.118", 3.00mm Width)
Output Type: Rail-to-Rail
Mounting Type: Surface Mount
Amplifier Type: General Purpose
Operating Temperature: -40°C ~ 125°C
Current - Supply: 275µA (x2 Channels)
Slew Rate: 8V/µs
Gain Bandwidth Product: 7 MHz
Current - Input Bias: 1 pA
Voltage - Input Offset: 500 µV
Supplier Device Package: 8-MSOP
Part Status: Active
Number of Circuits: 2
Current - Output / Channel: 96 mA
Voltage - Supply Span (Min): 1.7 V
Voltage - Supply Span (Max): 5.5 V
товару немає в наявності
В кошику
од. на суму грн.
| LE25S161XATAG |
![]() |
Виробник: onsemi
Description: IC FLASH 16MBIT SPI 70MHZ 8WLCSP
Packaging: Tape & Reel (TR)
Package / Case: 8-XFBGA, WLCSP
Mounting Type: Surface Mount
Memory Size: 16Mbit
Memory Type: Non-Volatile
Operating Temperature: -40°C ~ 90°C (TA)
Voltage - Supply: 1.65V ~ 1.95V
Technology: FLASH
Clock Frequency: 70 MHz
Memory Format: FLASH
Supplier Device Package: 8-WLCSP (2.92x1.53)
Write Cycle Time - Word, Page: 700µs
Memory Interface: SPI
Memory Organization: 2M x 8
DigiKey Programmable: Not Verified
Description: IC FLASH 16MBIT SPI 70MHZ 8WLCSP
Packaging: Tape & Reel (TR)
Package / Case: 8-XFBGA, WLCSP
Mounting Type: Surface Mount
Memory Size: 16Mbit
Memory Type: Non-Volatile
Operating Temperature: -40°C ~ 90°C (TA)
Voltage - Supply: 1.65V ~ 1.95V
Technology: FLASH
Clock Frequency: 70 MHz
Memory Format: FLASH
Supplier Device Package: 8-WLCSP (2.92x1.53)
Write Cycle Time - Word, Page: 700µs
Memory Interface: SPI
Memory Organization: 2M x 8
DigiKey Programmable: Not Verified
товару немає в наявності
В кошику
од. на суму грн.
| NCP1602AEASNT1G |
![]() |
Виробник: onsemi
Description: IC PFC CTRLR CRM 6TSOP
Packaging: Cut Tape (CT)
Package / Case: SOT-23-6 Thin, TSOT-23-6
Mounting Type: Surface Mount
Operating Temperature: -40°C ~ 125°C
Voltage - Supply: 9.5V ~ 30V
Mode: Critical Conduction (CRM)
Supplier Device Package: 6-TSOP
Part Status: Obsolete
Current - Startup: 480 µA
Description: IC PFC CTRLR CRM 6TSOP
Packaging: Cut Tape (CT)
Package / Case: SOT-23-6 Thin, TSOT-23-6
Mounting Type: Surface Mount
Operating Temperature: -40°C ~ 125°C
Voltage - Supply: 9.5V ~ 30V
Mode: Critical Conduction (CRM)
Supplier Device Package: 6-TSOP
Part Status: Obsolete
Current - Startup: 480 µA
товару немає в наявності
В кошику
од. на суму грн.
| NTMFS5H409NLT1G |
![]() |
Виробник: onsemi
Description: MOSFET N-CH 40V 41A/270A 5DFN
Packaging: Cut Tape (CT)
Package / Case: 8-PowerTDFN, 5 Leads
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 41A (Ta), 270A (Tc)
Rds On (Max) @ Id, Vgs: 1.1mOhm @ 50A, 10V
Power Dissipation (Max): 3.2W (Ta), 140W (Tc)
Vgs(th) (Max) @ Id: 2V @ 250µA
Supplier Device Package: 5-DFN (5x6) (8-SOFL)
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 40 V
Gate Charge (Qg) (Max) @ Vgs: 89 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 5700 pF @ 20 V
Description: MOSFET N-CH 40V 41A/270A 5DFN
Packaging: Cut Tape (CT)
Package / Case: 8-PowerTDFN, 5 Leads
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 41A (Ta), 270A (Tc)
Rds On (Max) @ Id, Vgs: 1.1mOhm @ 50A, 10V
Power Dissipation (Max): 3.2W (Ta), 140W (Tc)
Vgs(th) (Max) @ Id: 2V @ 250µA
Supplier Device Package: 5-DFN (5x6) (8-SOFL)
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 40 V
Gate Charge (Qg) (Max) @ Vgs: 89 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 5700 pF @ 20 V
на замовлення 30586 шт:
термін постачання 21-31 дні (днів)| Кількість | Ціна |
|---|---|
| 2+ | 258.41 грн |
| 10+ | 158.28 грн |
| 25+ | 134.70 грн |
| 100+ | 101.41 грн |
| 250+ | 89.13 грн |
| 500+ | 81.57 грн |
| NTTFS5C453NLTAG |
![]() |
Виробник: onsemi
Description: MOSFET N-CH 40V 23A/107A 8WDFN
Packaging: Cut Tape (CT)
Package / Case: 8-PowerWDFN
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 23A (Ta), 107A (Tc)
Rds On (Max) @ Id, Vgs: 3mOhm @ 40A, 10V
Power Dissipation (Max): 3.3W (Ta), 68W (Tc)
Vgs(th) (Max) @ Id: 2V @ 250µA
Supplier Device Package: 8-WDFN (3.3x3.3)
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 40 V
Gate Charge (Qg) (Max) @ Vgs: 35 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 2100 pF @ 25 V
Description: MOSFET N-CH 40V 23A/107A 8WDFN
Packaging: Cut Tape (CT)
Package / Case: 8-PowerWDFN
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 23A (Ta), 107A (Tc)
Rds On (Max) @ Id, Vgs: 3mOhm @ 40A, 10V
Power Dissipation (Max): 3.3W (Ta), 68W (Tc)
Vgs(th) (Max) @ Id: 2V @ 250µA
Supplier Device Package: 8-WDFN (3.3x3.3)
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 40 V
Gate Charge (Qg) (Max) @ Vgs: 35 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 2100 pF @ 25 V
на замовлення 8875 шт:
термін постачання 21-31 дні (днів)| Кількість | Ціна |
|---|---|
| 8+ | 45.35 грн |
| 11+ | 30.65 грн |
| 25+ | 27.45 грн |
| 100+ | 22.48 грн |
| 250+ | 20.91 грн |
| 500+ | 19.97 грн |
| NTTFS5C670NLTAG |
![]() |
Виробник: onsemi
Description: MOSFET N-CH 60V 16A/70A 8WDFN
Packaging: Cut Tape (CT)
Package / Case: 8-PowerWDFN
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 16A (Ta), 70A (Tc)
Rds On (Max) @ Id, Vgs: 6.5mOhm @ 35A, 10V
Power Dissipation (Max): 3.2W (Ta), 63W (Tc)
Vgs(th) (Max) @ Id: 2V @ 250µA
Supplier Device Package: 8-WDFN (3.3x3.3)
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 60 V
Gate Charge (Qg) (Max) @ Vgs: 20 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 1400 pF @ 25 V
Description: MOSFET N-CH 60V 16A/70A 8WDFN
Packaging: Cut Tape (CT)
Package / Case: 8-PowerWDFN
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 16A (Ta), 70A (Tc)
Rds On (Max) @ Id, Vgs: 6.5mOhm @ 35A, 10V
Power Dissipation (Max): 3.2W (Ta), 63W (Tc)
Vgs(th) (Max) @ Id: 2V @ 250µA
Supplier Device Package: 8-WDFN (3.3x3.3)
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 60 V
Gate Charge (Qg) (Max) @ Vgs: 20 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 1400 pF @ 25 V
на замовлення 14675 шт:
термін постачання 21-31 дні (днів)| Кількість | Ціна |
|---|---|
| 3+ | 153.16 грн |
| 10+ | 108.60 грн |
| 25+ | 98.94 грн |
| 100+ | 82.93 грн |
| 250+ | 78.20 грн |
| 500+ | 75.35 грн |
| NTTFS5C454NLTAG |
![]() |
Виробник: onsemi
Description: MOSFET N-CH 40V 20A/85A 8WDFN
Packaging: Cut Tape (CT)
Package / Case: 8-PowerWDFN
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 20A (Ta), 85A (Tc)
Rds On (Max) @ Id, Vgs: 3.8mOhm @ 20A, 10V
Power Dissipation (Max): 3.2W (Ta), 55W (Tc)
Vgs(th) (Max) @ Id: 2V @ 250µA
Supplier Device Package: 8-WDFN (3.3x3.3)
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 40 V
Gate Charge (Qg) (Max) @ Vgs: 18 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 1600 pF @ 25 V
Description: MOSFET N-CH 40V 20A/85A 8WDFN
Packaging: Cut Tape (CT)
Package / Case: 8-PowerWDFN
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 20A (Ta), 85A (Tc)
Rds On (Max) @ Id, Vgs: 3.8mOhm @ 20A, 10V
Power Dissipation (Max): 3.2W (Ta), 55W (Tc)
Vgs(th) (Max) @ Id: 2V @ 250µA
Supplier Device Package: 8-WDFN (3.3x3.3)
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 40 V
Gate Charge (Qg) (Max) @ Vgs: 18 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 1600 pF @ 25 V
на замовлення 17265 шт:
термін постачання 21-31 дні (днів)| Кількість | Ціна |
|---|---|
| 10+ | 35.94 грн |
| 14+ | 24.64 грн |
| 25+ | 21.98 грн |
| 100+ | 17.94 грн |
| 250+ | 16.64 грн |
| 500+ | 15.87 грн |
| NTTFS5C673NLTAG |
![]() |
Виробник: onsemi
Description: MOSFET N-CH 60V 13A/50A 8WDFN
Packaging: Cut Tape (CT)
Package / Case: 8-PowerWDFN
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 13A (Ta), 50A (Tc)
Rds On (Max) @ Id, Vgs: 9.3mOhm @ 25A, 10V
Power Dissipation (Max): 3.1W (Ta), 46W (Tc)
Vgs(th) (Max) @ Id: 2V @ 250µA
Supplier Device Package: 8-WDFN (3.3x3.3)
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 60 V
Gate Charge (Qg) (Max) @ Vgs: 9.5 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 880 pF @ 25 V
Description: MOSFET N-CH 60V 13A/50A 8WDFN
Packaging: Cut Tape (CT)
Package / Case: 8-PowerWDFN
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 13A (Ta), 50A (Tc)
Rds On (Max) @ Id, Vgs: 9.3mOhm @ 25A, 10V
Power Dissipation (Max): 3.1W (Ta), 46W (Tc)
Vgs(th) (Max) @ Id: 2V @ 250µA
Supplier Device Package: 8-WDFN (3.3x3.3)
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 60 V
Gate Charge (Qg) (Max) @ Vgs: 9.5 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 880 pF @ 25 V
на замовлення 26209 шт:
термін постачання 21-31 дні (днів)| Кількість | Ціна |
|---|---|
| 11+ | 31.66 грн |
| 16+ | 21.75 грн |
| 25+ | 19.38 грн |
| 100+ | 15.75 грн |
| 250+ | 14.60 грн |
| 500+ | 13.90 грн |
| NCP51402MNTXG |
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Виробник: onsemi
Description: IC REG LDO DDR 1OUT 10DFN
Description: IC REG LDO DDR 1OUT 10DFN
на замовлення 10637 шт:
термін постачання 21-31 дні (днів)| Кількість | Ціна |
|---|---|
| 3+ | 134.34 грн |
| 10+ | 115.77 грн |
| 25+ | 109.85 грн |
| 100+ | 84.66 грн |
| 250+ | 79.15 грн |
| 500+ | 69.95 грн |
| 1000+ | 54.32 грн |
| NCP81245MNTXG |
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Виробник: onsemi
Description: IC REG CTRLR IMVP8 7OUT 52QFN
Description: IC REG CTRLR IMVP8 7OUT 52QFN
товару немає в наявності
В кошику
од. на суму грн.
| NCP81151BMNTBG |
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Виробник: onsemi
Description: IC GATE DRVR HALF-BRIDGE 8DFN
Packaging: Cut Tape (CT)
Package / Case: 8-VFDFN Exposed Pad
Mounting Type: Surface Mount
Operating Temperature: -40°C ~ 150°C (TJ)
Voltage - Supply: 4.5V ~ 5.5V
Input Type: Non-Inverting
High Side Voltage - Max (Bootstrap): 40 V
Supplier Device Package: 8-DFN (2x2)
Rise / Fall Time (Typ): 16ns, 11ns
Channel Type: Synchronous
Driven Configuration: Half-Bridge
Number of Drivers: 2
Gate Type: N-Channel MOSFET
Logic Voltage - VIL, VIH: 0.6V, 3.3V
DigiKey Programmable: Not Verified
Description: IC GATE DRVR HALF-BRIDGE 8DFN
Packaging: Cut Tape (CT)
Package / Case: 8-VFDFN Exposed Pad
Mounting Type: Surface Mount
Operating Temperature: -40°C ~ 150°C (TJ)
Voltage - Supply: 4.5V ~ 5.5V
Input Type: Non-Inverting
High Side Voltage - Max (Bootstrap): 40 V
Supplier Device Package: 8-DFN (2x2)
Rise / Fall Time (Typ): 16ns, 11ns
Channel Type: Synchronous
Driven Configuration: Half-Bridge
Number of Drivers: 2
Gate Type: N-Channel MOSFET
Logic Voltage - VIL, VIH: 0.6V, 3.3V
DigiKey Programmable: Not Verified
на замовлення 1521 шт:
термін постачання 21-31 дні (днів)| Кількість | Ціна |
|---|---|
| 6+ | 65.89 грн |
| 10+ | 38.40 грн |
| 25+ | 31.67 грн |
| 100+ | 22.63 грн |
| 250+ | 19.15 грн |
| 500+ | 17.01 грн |
| 1000+ | 14.96 грн |
| NCS20032DMR2G |
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Виробник: onsemi
Description: IC OPAMP GP 2 CIRCUIT 8MSOP
Packaging: Cut Tape (CT)
Package / Case: 8-TSSOP, 8-MSOP (0.118", 3.00mm Width)
Output Type: Rail-to-Rail
Mounting Type: Surface Mount
Amplifier Type: General Purpose
Operating Temperature: -40°C ~ 125°C
Current - Supply: 275µA (x2 Channels)
Slew Rate: 8V/µs
Gain Bandwidth Product: 7 MHz
Current - Input Bias: 1 pA
Voltage - Input Offset: 500 µV
Supplier Device Package: 8-MSOP
Part Status: Active
Number of Circuits: 2
Current - Output / Channel: 96 mA
Voltage - Supply Span (Min): 1.7 V
Voltage - Supply Span (Max): 5.5 V
Description: IC OPAMP GP 2 CIRCUIT 8MSOP
Packaging: Cut Tape (CT)
Package / Case: 8-TSSOP, 8-MSOP (0.118", 3.00mm Width)
Output Type: Rail-to-Rail
Mounting Type: Surface Mount
Amplifier Type: General Purpose
Operating Temperature: -40°C ~ 125°C
Current - Supply: 275µA (x2 Channels)
Slew Rate: 8V/µs
Gain Bandwidth Product: 7 MHz
Current - Input Bias: 1 pA
Voltage - Input Offset: 500 µV
Supplier Device Package: 8-MSOP
Part Status: Active
Number of Circuits: 2
Current - Output / Channel: 96 mA
Voltage - Supply Span (Min): 1.7 V
Voltage - Supply Span (Max): 5.5 V
на замовлення 2125 шт:
термін постачання 21-31 дні (днів)| Кількість | Ціна |
|---|---|
| 6+ | 65.03 грн |
| 10+ | 56.44 грн |
| 25+ | 53.62 грн |
| 100+ | 38.62 грн |
| 250+ | 34.13 грн |
| 500+ | 32.33 грн |
| 1000+ | 24.74 грн |
| VEC2315-TL-W |
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Виробник: onsemi
Description: MOSFET 2P-CH 60V 2.5A VEC8
Packaging: Cut Tape (CT)
Package / Case: 8-SMD, Flat Lead
Mounting Type: Surface Mount
Configuration: 2 P-Channel (Dual)
Operating Temperature: 150°C (TJ)
Technology: MOSFET (Metal Oxide)
Power - Max: 1W
Drain to Source Voltage (Vdss): 60V
Current - Continuous Drain (Id) @ 25°C: 2.5A
Input Capacitance (Ciss) (Max) @ Vds: 420pF @ 20V
Rds On (Max) @ Id, Vgs: 137mOhm @ 1.5A, 10V
Gate Charge (Qg) (Max) @ Vgs: 11nC @ 10V
FET Feature: Logic Level Gate, 4V Drive
Vgs(th) (Max) @ Id: 2.6V @ 1mA
Supplier Device Package: SOT-28FL/VEC8
Part Status: Obsolete
Description: MOSFET 2P-CH 60V 2.5A VEC8
Packaging: Cut Tape (CT)
Package / Case: 8-SMD, Flat Lead
Mounting Type: Surface Mount
Configuration: 2 P-Channel (Dual)
Operating Temperature: 150°C (TJ)
Technology: MOSFET (Metal Oxide)
Power - Max: 1W
Drain to Source Voltage (Vdss): 60V
Current - Continuous Drain (Id) @ 25°C: 2.5A
Input Capacitance (Ciss) (Max) @ Vds: 420pF @ 20V
Rds On (Max) @ Id, Vgs: 137mOhm @ 1.5A, 10V
Gate Charge (Qg) (Max) @ Vgs: 11nC @ 10V
FET Feature: Logic Level Gate, 4V Drive
Vgs(th) (Max) @ Id: 2.6V @ 1mA
Supplier Device Package: SOT-28FL/VEC8
Part Status: Obsolete
товару немає в наявності
В кошику
од. на суму грн.
| LE25S161XATAG |
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Виробник: onsemi
Description: IC FLASH 16MBIT SPI 70MHZ 8WLCSP
Packaging: Cut Tape (CT)
Package / Case: 8-XFBGA, WLCSP
Mounting Type: Surface Mount
Memory Size: 16Mbit
Memory Type: Non-Volatile
Operating Temperature: -40°C ~ 90°C (TA)
Voltage - Supply: 1.65V ~ 1.95V
Technology: FLASH
Clock Frequency: 70 MHz
Memory Format: FLASH
Supplier Device Package: 8-WLCSP (2.92x1.53)
Write Cycle Time - Word, Page: 700µs
Memory Interface: SPI
Memory Organization: 2M x 8
DigiKey Programmable: Not Verified
Description: IC FLASH 16MBIT SPI 70MHZ 8WLCSP
Packaging: Cut Tape (CT)
Package / Case: 8-XFBGA, WLCSP
Mounting Type: Surface Mount
Memory Size: 16Mbit
Memory Type: Non-Volatile
Operating Temperature: -40°C ~ 90°C (TA)
Voltage - Supply: 1.65V ~ 1.95V
Technology: FLASH
Clock Frequency: 70 MHz
Memory Format: FLASH
Supplier Device Package: 8-WLCSP (2.92x1.53)
Write Cycle Time - Word, Page: 700µs
Memory Interface: SPI
Memory Organization: 2M x 8
DigiKey Programmable: Not Verified
товару немає в наявності
В кошику
од. на суму грн.
| 1N5370BRLG |
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Виробник: onsemi
Description: DIODE ZENER 56V 5W AXIAL
Packaging: Cut Tape (CT)
Tolerance: ±5%
Package / Case: Axial
Mounting Type: Through Hole
Operating Temperature: -65°C ~ 200°C
Voltage - Zener (Nom) (Vz): 56 V
Impedance (Max) (Zzt): 35 Ohms
Supplier Device Package: Axial
Power - Max: 5 W
Voltage - Forward (Vf) (Max) @ If: 1.2 V @ 1 A
Current - Reverse Leakage @ Vr: 500 nA @ 42.6 V
Description: DIODE ZENER 56V 5W AXIAL
Packaging: Cut Tape (CT)
Tolerance: ±5%
Package / Case: Axial
Mounting Type: Through Hole
Operating Temperature: -65°C ~ 200°C
Voltage - Zener (Nom) (Vz): 56 V
Impedance (Max) (Zzt): 35 Ohms
Supplier Device Package: Axial
Power - Max: 5 W
Voltage - Forward (Vf) (Max) @ If: 1.2 V @ 1 A
Current - Reverse Leakage @ Vr: 500 nA @ 42.6 V
на замовлення 25197 шт:
термін постачання 21-31 дні (днів)| Кількість | Ціна |
|---|---|
| 17+ | 20.32 грн |
| 22+ | 15.09 грн |
| 100+ | 12.23 грн |
| 500+ | 10.50 грн |
| 1N5374BRLG |
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Виробник: onsemi
Description: DIODE ZENER 75V 5W AXIAL
Packaging: Cut Tape (CT)
Tolerance: ±5%
Package / Case: Axial
Mounting Type: Through Hole
Operating Temperature: -65°C ~ 200°C
Voltage - Zener (Nom) (Vz): 75 V
Impedance (Max) (Zzt): 45 Ohms
Supplier Device Package: Axial
Part Status: Active
Power - Max: 5 W
Voltage - Forward (Vf) (Max) @ If: 1.2 V @ 1 A
Current - Reverse Leakage @ Vr: 500 nA @ 56 V
Description: DIODE ZENER 75V 5W AXIAL
Packaging: Cut Tape (CT)
Tolerance: ±5%
Package / Case: Axial
Mounting Type: Through Hole
Operating Temperature: -65°C ~ 200°C
Voltage - Zener (Nom) (Vz): 75 V
Impedance (Max) (Zzt): 45 Ohms
Supplier Device Package: Axial
Part Status: Active
Power - Max: 5 W
Voltage - Forward (Vf) (Max) @ If: 1.2 V @ 1 A
Current - Reverse Leakage @ Vr: 500 nA @ 56 V
на замовлення 11990 шт:
термін постачання 21-31 дні (днів)| Кількість | Ціна |
|---|---|
| 17+ | 20.32 грн |
| 24+ | 14.05 грн |
| 100+ | 13.42 грн |
| 500+ | 11.28 грн |
| 1000+ | 10.50 грн |
































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