| Фото | Назва | Виробник | Інформація | Доступність | Ціна без ПДВ | ||||||||||||||||||
|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|
.jpg "VEC2315-TL-W") |
VEC2315-TL-W | onsemi |
 Description: MOSFET 2P-CH 60V 2.5A VEC8Part Status: Obsolete Supplier Device Package: SOT-28FL/VEC8 Vgs(th) (Max) @ Id: 2.6V @ 1mA FET Feature: Logic Level Gate, 4V Drive Gate Charge (Qg) (Max) @ Vgs: 11nC @ 10V Rds On (Max) @ Id, Vgs: 137mOhm @ 1.5A, 10V Input Capacitance (Ciss) (Max) @ Vds: 420pF @ 20V Current - Continuous Drain (Id) @ 25°C: 2.5A Drain to Source Voltage (Vdss): 60V Power - Max: 1W Technology: MOSFET (Metal Oxide) Operating Temperature: 150°C (TJ) Configuration: 2 P-Channel (Dual) Mounting Type: Surface Mount Package / Case: 8-SMD, Flat Lead Packaging: Cut Tape (CT) |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||||||||||||
 |
LE25S161XATAG | onsemi |
Description: IC FLASH 16MBIT SPI 70MHZ 8WLCSP DigiKey Programmable: Not Verified Memory Organization: 2M x 8 Memory Interface: SPI Write Cycle Time - Word, Page: 700µs Supplier Device Package: 8-WLCSP (2.92x1.53) Memory Format: FLASH Clock Frequency: 70 MHz Technology: FLASH Voltage - Supply: 1.65V ~ 1.95V Operating Temperature: -40°C ~ 90°C (TA) Memory Type: Non-Volatile Memory Size: 16Mbit Mounting Type: Surface Mount Package / Case: 8-XFBGA, WLCSP Packaging: Cut Tape (CT) |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||||||||||||
 |
1N5370BRLG | onsemi |
Description: DIODE ZENER 56V 5W AXIAL Packaging: Cut Tape (CT) Tolerance: ±5% Package / Case: Axial Mounting Type: Through Hole Operating Temperature: -65°C ~ 200°C Voltage - Zener (Nom) (Vz): 56 V Impedance (Max) (Zzt): 35 Ohms Supplier Device Package: Axial Power - Max: 5 W Voltage - Forward (Vf) (Max) @ If: 1.2 V @ 1 A Current - Reverse Leakage @ Vr: 500 nA @ 42.6 V |
на замовлення 25197 шт: термін постачання 21-31 дні (днів) |
|
||||||||||||||||||
|
|
1N5374BRLG | onsemi |
Description: DIODE ZENER 75V 5W AXIAL Packaging: Cut Tape (CT) Tolerance: ±5% Package / Case: Axial Mounting Type: Through Hole Operating Temperature: -65°C ~ 200°C Voltage - Zener (Nom) (Vz): 75 V Impedance (Max) (Zzt): 45 Ohms Supplier Device Package: Axial Part Status: Active Power - Max: 5 W Voltage - Forward (Vf) (Max) @ If: 1.2 V @ 1 A Current - Reverse Leakage @ Vr: 500 nA @ 56 V |
на замовлення 11990 шт: термін постачання 21-31 дні (днів) |
|
||||||||||||||||||
|
|
1N5375BRLG | onsemi |
Description: DIODE ZENER 82V 5W AXIAL Packaging: Cut Tape (CT) Tolerance: ±5% Package / Case: Axial Mounting Type: Through Hole Operating Temperature: -65°C ~ 200°C Voltage - Zener (Nom) (Vz): 82 V Impedance (Max) (Zzt): 65 Ohms Supplier Device Package: Axial Part Status: Active Power - Max: 5 W Voltage - Forward (Vf) (Max) @ If: 1.2 V @ 1 A Current - Reverse Leakage @ Vr: 500 nA @ 62.2 V |
на замовлення 23048 шт: термін постачання 21-31 дні (днів) |
|
||||||||||||||||||
|
|
1N5380BRLG | onsemi |
Description: DIODE ZENER 120V 5W AXIAL Packaging: Cut Tape (CT) Tolerance: ±5% Package / Case: Axial Mounting Type: Through Hole Operating Temperature: -65°C ~ 200°C Voltage - Zener (Nom) (Vz): 120 V Impedance (Max) (Zzt): 170 Ohms Supplier Device Package: Axial Part Status: Active Power - Max: 5 W Voltage - Forward (Vf) (Max) @ If: 1.2 V @ 1 A Current - Reverse Leakage @ Vr: 500 nA @ 91.2 V |
на замовлення 2072 шт: термін постачання 21-31 дні (днів) |
|
||||||||||||||||||
 |
MC7915BD2TR4G | onsemi |
Description: IC REG LINEAR -15V 1A D2PAK-3 Packaging: Cut Tape (CT) Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB Output Type: Fixed Mounting Type: Surface Mount Current - Output: 1A Operating Temperature: -40°C ~ 125°C Output Configuration: Negative Voltage - Input (Max): -35V Number of Regulators: 1 Supplier Device Package: D2PAK-3 Voltage - Output (Min/Fixed): -15V Part Status: Active PSRR: 60dB (120Hz) Voltage Dropout (Max): 1.3V @ 1A (Typ) Protection Features: Over Current, Over Temperature |
на замовлення 4220 шт: термін постачання 21-31 дні (днів) |
|
||||||||||||||||||
 |
NTNS3193NZT5G | onsemi |
Description: MOSFET N-CH 20V 224MA 3XLLGA Packaging: Cut Tape (CT) Package / Case: 3-XFLGA Mounting Type: Surface Mount Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 224mA (Ta) Rds On (Max) @ Id, Vgs: 1.4Ohm @ 100mA, 4.5V Power Dissipation (Max): 120mW (Ta) Vgs(th) (Max) @ Id: 1V @ 250µA Supplier Device Package: 3-XLLGA (0.62x0.62) Part Status: Active Drive Voltage (Max Rds On, Min Rds On): 1.5V, 4.5V Vgs (Max): ±8V Drain to Source Voltage (Vdss): 20 V Gate Charge (Qg) (Max) @ Vgs: 0.7 nC @ 4.5 V Input Capacitance (Ciss) (Max) @ Vds: 15.8 pF @ 15 V |
на замовлення 89367 шт: термін постачання 21-31 дні (днів) |
|
||||||||||||||||||
 |
1SMA5926BT3G | onsemi |
Description: DIODE ZENER 11V 1.5W SMA Current - Reverse Leakage @ Vr: 500 nA @ 8.4 V Voltage - Forward (Vf) (Max) @ If: 1.2 V @ 200 mA Power - Max: 1.5 W Supplier Device Package: SMA Impedance (Max) (Zzt): 5.5 Ohms Voltage - Zener (Nom) (Vz): 11 V Operating Temperature: -65°C ~ 150°C Mounting Type: Surface Mount Package / Case: DO-214AC, SMA Tolerance: ±5% Packaging: Cut Tape (CT) |
на замовлення 8350 шт: термін постачання 21-31 дні (днів) |
|
||||||||||||||||||
 |
MC14050BDTR2G | onsemi |
Description: IC BUFF NON-INVERT 18V 16-TSSOP Part Status: Active Supplier Device Package: 16-TSSOP Current - Output High, Low: 10mA, 40mA Number of Bits per Element: 1 Voltage - Supply: 3V ~ 18V Operating Temperature: -55°C ~ 125°C (TA) Logic Type: Buffer, Non-Inverting Number of Elements: 6 Mounting Type: Surface Mount Output Type: Push-Pull Package / Case: 16-TSSOP (0.173", 4.40mm Width) Packaging: Cut Tape (CT) |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||||||||||||
 |
MC14082BDR2G | onsemi |
Description: IC GATE AND 2CH 4-INP 14SOIC Current - Quiescent (Max): 1 µA Number of Circuits: 2 Max Propagation Delay @ V, Max CL: 100ns @ 15V, 50pF Input Logic Level - Low: 1.5V ~ 4V Input Logic Level - High: 3.5V ~ 11V Supplier Device Package: 14-SOIC Number of Inputs: 4 Current - Output High, Low: 8.8mA, 8.8mA Voltage - Supply: 3V ~ 18V Operating Temperature: -55°C ~ 125°C Logic Type: AND Gate Mounting Type: Surface Mount Package / Case: 14-SOIC (0.154", 3.90mm Width) Packaging: Cut Tape (CT) |
на замовлення 11696 шт: термін постачання 21-31 дні (днів) |
|
||||||||||||||||||
 |
MC74HC238ADTR2G | onsemi |
Description: IC DECODER/DEMUX 1X3:8 16-TSSOP Packaging: Cut Tape (CT) Package / Case: 16-TSSOP (0.173", 4.40mm Width) Mounting Type: Surface Mount Circuit: 1 x 3:8 Type: Decoder/Demultiplexer Operating Temperature: -55°C ~ 125°C Voltage - Supply: 2V ~ 6V Independent Circuits: 1 Current - Output High, Low: 5.2mA, 5.2mA Voltage Supply Source: Single Supply Supplier Device Package: 16-TSSOP Part Status: Active |
на замовлення 23420 шт: термін постачання 21-31 дні (днів) |
|
||||||||||||||||||
 |
MC7815CDTRKG | onsemi |
Description: IC REG LINEAR 15V 1A DPAK Packaging: Cut Tape (CT) Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63 Output Type: Fixed Mounting Type: Surface Mount Current - Output: 1A Operating Temperature: 0°C ~ 125°C Output Configuration: Positive Current - Quiescent (Iq): 6.5 mA Voltage - Input (Max): 35V Number of Regulators: 1 Supplier Device Package: DPAK Voltage - Output (Min/Fixed): 15V Part Status: Active PSRR: 58dB (120Hz) Voltage Dropout (Max): 2V @ 1A (Typ) Protection Features: Over Temperature, Short Circuit |
на замовлення 6994 шт: термін постачання 21-31 дні (днів) |
|
||||||||||||||||||
 |
MC79L15ACPRAG | onsemi |
Description: IC REG LINEAR -15V 100MA TO92 Packaging: Cut Tape (CT) Package / Case: TO-226-3, TO-92-3 Long Body, Formed Leads Output Type: Fixed Mounting Type: Through Hole Current - Output: 100mA Operating Temperature: 0°C ~ 125°C Output Configuration: Negative Voltage - Input (Max): -35V Number of Regulators: 1 Supplier Device Package: TO-92 (TO-226) Voltage - Output (Min/Fixed): -15V Part Status: Active PSRR: 39dB (120Hz) Voltage Dropout (Max): 1.7V @ 40mA (Typ) Protection Features: Over Temperature, Short Circuit |
на замовлення 9564 шт: термін постачання 21-31 дні (днів) |
|
||||||||||||||||||
 |
MMBZ5V6ALT3G | onsemi |
Description: DIODE ZENER ARRAY 6.2V SOT-23-3 Current - Reverse Leakage @ Vr: 5 µA @ 3 V Voltage - Forward (Vf) (Max) @ If: 900 mV @ 10 mA Power - Max: 300 mW Voltage - Zener (Nom) (Vz): 6.2 V Configuration: 1 Pair Common Anode Tolerance: ±5% Part Status: Active Power Line Protection: No Power - Peak Pulse: 24W Voltage - Clamping (Max) @ Ipp: 8V Voltage - Breakdown (Min): 5.32V Bidirectional Channels: 1 Unidirectional Channels: 2 Supplier Device Package: SOT-23-3 (TO-236) Voltage - Reverse Standoff (Typ): 3V Current - Peak Pulse (10/1000µs): 3A Applications: General Purpose Operating Temperature: -55°C ~ 150°C (TJ) Type: Zener Mounting Type: Surface Mount Package / Case: TO-236-3, SC-59, SOT-23-3 Packaging: Cut Tape (CT) |
на замовлення 39945 шт: термін постачання 21-31 дні (днів) |
|
||||||||||||||||||
|
|
PCA9654EDTR2G | onsemi |
Description: IC XPNDR 100KHZ I2C 16TSSOP Number of I/O: 8 Interface: I2C Mounting Type: Surface Mount Package / Case: 16-TSSOP (0.173", 4.40mm Width) Features: POR Packaging: Cut Tape (CT) Supplier Device Package: 16-TSSOP Interrupt Output: Yes Clock Frequency: 100 kHz Voltage - Supply: 1.65V ~ 5.5V Operating Temperature: -55°C ~ 125°C DigiKey Programmable: Not Verified Part Status: Active |
на замовлення 11297 шт: термін постачання 21-31 дні (днів) |
|
||||||||||||||||||
 |
EMI8143MUTAG | onsemi |
Description: CMC 100MA 6LN SMD ESD Features: TVS Diode ESD Protection Packaging: Cut Tape (CT) Package / Case: 16-XFDFN Filter Type: Signal Line Size / Dimension: 0.138" L x 0.053" W (3.50mm x 1.35mm) Mounting Type: Surface Mount Number of Lines: 6 Operating Temperature: -40°C ~ 85°C Height (Max): 0.020" (0.50mm) Current Rating (Max): 100mA DC Resistance (DCR) (Max): 6Ohm (Typ) |
на замовлення 955 шт: термін постачання 21-31 дні (днів) |
|
||||||||||||||||||
 |
ESD8351XV2T1G | onsemi |
Description: TVS DIODE 3.3VWM 11.2VC SOD523 Packaging: Cut Tape (CT) Package / Case: SC-79, SOD-523 Mounting Type: Surface Mount Type: Zener Operating Temperature: -55°C ~ 125°C (TJ) Applications: General Purpose Capacitance @ Frequency: 0.4pF @ 1MHz Current - Peak Pulse (10/1000µs): 5A (8/20µs) Voltage - Reverse Standoff (Typ): 3.3V (Max) Supplier Device Package: SOD-523 Unidirectional Channels: 1 Voltage - Breakdown (Min): 5.5V Voltage - Clamping (Max) @ Ipp: 11.2V Power Line Protection: No Part Status: Active |
на замовлення 1978 шт: термін постачання 21-31 дні (днів) |
|
||||||||||||||||||
 |
MBD330DWT1G | onsemi |
Description: RF DIODE SCHOTTKY 30V 120MW SC88 Packaging: Cut Tape (CT) Package / Case: 6-TSSOP, SC-88, SOT-363 Diode Type: Schottky - 2 Independent Operating Temperature: -55°C ~ 125°C (TJ) Capacitance @ Vr, F: 1.5pF @ 15V, 1MHz Voltage - Peak Reverse (Max): 30V Supplier Device Package: SC-88/SC70-6/SOT-363 Part Status: Active Power Dissipation (Max): 120 mW |
на замовлення 15000 шт: термін постачання 21-31 дні (днів) |
|
||||||||||||||||||
 |
SBAV99RWT1G | onsemi |
Description: DIODE ARRAY GP 100V 215MA SC70-3 Packaging: Cut Tape (CT) Package / Case: SC-70, SOT-323 Mounting Type: Surface Mount Speed: Fast Recovery =< 500ns, > 200mA (Io) Reverse Recovery Time (trr): 6 ns Technology: Standard Diode Configuration: 1 Pair Series Connection Current - Average Rectified (Io) (per Diode): 215mA (DC) Supplier Device Package: SC-70-3 (SOT323) Operating Temperature - Junction: -65°C ~ 150°C Voltage - DC Reverse (Vr) (Max): 100 V Voltage - Forward (Vf) (Max) @ If: 1.25 V @ 150 mA Current - Reverse Leakage @ Vr: 2.5 µA @ 70 V |
на замовлення 1444 шт: термін постачання 21-31 дні (днів) |
|
||||||||||||||||||
|
|
SMUN5213T1G | onsemi |
Description: TRANS PREBIAS NPN 50V SC70-3 Packaging: Cut Tape (CT) Package / Case: SC-70, SOT-323 Mounting Type: Surface Mount Transistor Type: NPN - Pre-Biased Vce Saturation (Max) @ Ib, Ic: 250mV @ 300µA, 10mA Current - Collector Cutoff (Max): 500nA DC Current Gain (hFE) (Min) @ Ic, Vce: 80 @ 5mA, 10V Supplier Device Package: SC-70-3 (SOT323) Grade: Automotive Part Status: Active Current - Collector (Ic) (Max): 100 mA Voltage - Collector Emitter Breakdown (Max): 50 V Power - Max: 202 mW Resistor - Base (R1): 47 kOhms Resistor - Emitter Base (R2): 47 kOhms Qualification: AEC-Q101 Resistors Included: R1 and R2 |
на замовлення 3200 шт: термін постачання 21-31 дні (днів) |
|
||||||||||||||||||
 |
FGY120T65SPD-F085 | onsemi |
Description: IGBT TRENCH FS 650V 240A TO-247 Packaging: Tube Package / Case: TO-247-3 Mounting Type: Through Hole Operating Temperature: -55°C ~ 175°C (TJ) Input Type: Standard Reverse Recovery Time (trr): 123 ns Vce(on) (Max) @ Vge, Ic: 1.85V @ 15V, 120A Supplier Device Package: TO-247-3 IGBT Type: Trench Field Stop Td (on/off) @ 25°C: 53ns/102ns Switching Energy: 6.8mJ (on), 3.5mJ (off) Test Condition: 400V, 120A, 5Ohm, 15V Gate Charge: 162 nC Part Status: Active Current - Collector (Ic) (Max): 240 A Voltage - Collector Emitter Breakdown (Max): 650 V Current - Collector Pulsed (Icm): 378 A Power - Max: 882 W Grade: Automotive Qualification: AEC-Q101 |
на замовлення 301 шт: термін постачання 21-31 дні (днів) |
|
||||||||||||||||||
 |
FAN49103AUC340X | onsemi |
Description: IC REG BCK BST PROG/3.4V 20WLCSP Voltage - Output (Min/Fixed): 2.8V, 3.4V Voltage - Input (Min): 2.5V Voltage - Output (Max): 4V Synchronous Rectifier: Yes Supplier Device Package: 20-WLCSP (1.96x1.56) Topology: Buck-Boost Voltage - Input (Max): 5.5V Frequency - Switching: 1.8MHz Output Configuration: Positive Operating Temperature: -40°C ~ 85°C (TA) Current - Output: 2.5A Function: Step-Up/Step-Down Number of Outputs: 1 Mounting Type: Surface Mount Output Type: Programmable (Fixed) Package / Case: 20-UFBGA, WLCSP Packaging: Tape & Reel (TR) |
на замовлення 3000 шт: термін постачання 21-31 дні (днів) |
|
||||||||||||||||||
 |
FDB0170N607L | onsemi |
Description: MOSFET N-CH 60V 300A TO263-7 Packaging: Tape & Reel (TR) Package / Case: TO-263-7, D2PAK (6 Leads + Tab) Mounting Type: Surface Mount Operating Temperature: -55°C ~ 175°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 300A (Tc) Rds On (Max) @ Id, Vgs: 1.4mOhm @ 39A, 10V Power Dissipation (Max): 3.8W (Ta), 250W (Tc) Vgs(th) (Max) @ Id: 4V @ 250µA Supplier Device Package: TO-263-7 Part Status: Active Drive Voltage (Max Rds On, Min Rds On): 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 60 V Gate Charge (Qg) (Max) @ Vgs: 243 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 19250 pF @ 30 V |
на замовлення 1600 шт: термін постачання 21-31 дні (днів) |
|
||||||||||||||||||
|
|
FDB0190N807L | onsemi |
Description: MOSFET N-CH 80V 270A TO263-7 Packaging: Tape & Reel (TR) Package / Case: TO-263-7, D2PAK (6 Leads + Tab) Mounting Type: Surface Mount Operating Temperature: -55°C ~ 175°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 270A (Tc) Rds On (Max) @ Id, Vgs: 1.7mOhm @ 34A, 10V Power Dissipation (Max): 3.8W (Ta), 250W (Tc) Vgs(th) (Max) @ Id: 4V @ 250µA Supplier Device Package: TO-263-7 Part Status: Active Drive Voltage (Max Rds On, Min Rds On): 8V, 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 80 V Gate Charge (Qg) (Max) @ Vgs: 249 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 19110 pF @ 40 V |
на замовлення 800 шт: термін постачання 21-31 дні (днів) |
|
||||||||||||||||||
|
|
FDB0250N807L | onsemi |
Description: MOSFET N-CH 80V 240A TO263-7 Drain to Source Voltage (Vdss): 80 V Vgs (Max): ±20V Drive Voltage (Max Rds On, Min Rds On): 8V, 10V Part Status: Active Supplier Device Package: TO-263-7 Vgs(th) (Max) @ Id: 4V @ 250µA Power Dissipation (Max): 3.8W (Ta), 214W (Tc) Rds On (Max) @ Id, Vgs: 2.2mOhm @ 30A, 10V Current - Continuous Drain (Id) @ 25°C: 240A (Tc) FET Type: N-Channel Technology: MOSFET (Metal Oxide) Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Surface Mount Package / Case: TO-263-7, D2PAK (6 Leads + Tab) Packaging: Tape & Reel (TR) Input Capacitance (Ciss) (Max) @ Vds: 15400 pF @ 40 V Gate Charge (Qg) (Max) @ Vgs: 200 nC @ 10 V |
товару немає в наявності |
Мінімальне замовлення: 800 шт В кошику од. на суму грн. | ||||||||||||||||||
|
|
FDB0300N1007L | onsemi |
Description: MOSFET N-CH 100V 200A TO263-7 Packaging: Tape & Reel (TR) Package / Case: TO-263-7, D2PAK (6 Leads + Tab) Mounting Type: Surface Mount Operating Temperature: -55°C ~ 175°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 200A (Tc) Rds On (Max) @ Id, Vgs: 3mOhm @ 26A, 10V Power Dissipation (Max): 3.8W (Ta), 250W (Tc) Vgs(th) (Max) @ Id: 4V @ 250µA Supplier Device Package: TO-263-7 Part Status: Active Drive Voltage (Max Rds On, Min Rds On): 6V, 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 100 V Gate Charge (Qg) (Max) @ Vgs: 113 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 8295 pF @ 50 V |
товару немає в наявності |
Мінімальне замовлення: 800 шт В кошику од. на суму грн. | ||||||||||||||||||
 |
FDBL86566-F085 | onsemi |
Description: MOSFET N-CH 60V 240A 8HPSOF Qualification: AEC-Q101 Grade: Automotive Input Capacitance (Ciss) (Max) @ Vds: 6655 pF @ 30 V Gate Charge (Qg) (Max) @ Vgs: 110 nC @ 10 V Drain to Source Voltage (Vdss): 60 V Vgs (Max): ±20V Drive Voltage (Max Rds On, Min Rds On): 10V Supplier Device Package: 8-HPSOF Vgs(th) (Max) @ Id: 4V @ 250µA Power Dissipation (Max): 300W (Tj) Rds On (Max) @ Id, Vgs: 2.4mOhm @ 80A, 10V Current - Continuous Drain (Id) @ 25°C: 240A (Tc) FET Type: N-Channel Technology: MOSFET (Metal Oxide) Operating Temperature: -55°C ~ 175°C (TJ) Mounting Type: Surface Mount Package / Case: 8-PowerSFN Packaging: Tape & Reel (TR) |
на замовлення 18000 шт: термін постачання 21-31 дні (днів) |
|
||||||||||||||||||
 |
FDD86380-F085 | onsemi |
Description: MOSFET N-CH 80V 50A DPAK Input Capacitance (Ciss) (Max) @ Vds: 1440 pF @ 40 V Gate Charge (Qg) (Max) @ Vgs: 30 nC @ 10 V Drain to Source Voltage (Vdss): 80 V Vgs (Max): ±20V Drive Voltage (Max Rds On, Min Rds On): 10V Grade: Automotive Supplier Device Package: TO-252AA Qualification: AEC-Q101 Vgs(th) (Max) @ Id: 4V @ 250µA Power Dissipation (Max): 75W (Tj) Rds On (Max) @ Id, Vgs: 13.5mOhm @ 50A, 10V Current - Continuous Drain (Id) @ 25°C: 50A (Tc) FET Type: N-Channel Technology: MOSFET (Metal Oxide) Operating Temperature: -55°C ~ 175°C (TJ) Mounting Type: Surface Mount Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63 Packaging: Tape & Reel (TR) |
на замовлення 7500 шт: термін постачання 21-31 дні (днів) |
|
||||||||||||||||||
 |
FPF2595UCX | onsemi |
Description: IC PWR SWITCH P-CHAN 1:1 12WLCSP |
товару немає в наявності |
Мінімальне замовлення: 3000 шт В кошику од. на суму грн. | ||||||||||||||||||
 |
S1GHE | onsemi |
Description: DIODE GEN PURP 400V 1A SOD323HE Qualification: AEC-Q101 Current - Reverse Leakage @ Vr: 1 µA @ 400 V Voltage - Forward (Vf) (Max) @ If: 1.1 V @ 1 A Voltage - DC Reverse (Vr) (Max): 400 V Grade: Automotive Operating Temperature - Junction: -55°C ~ 175°C Supplier Device Package: SOD-323HE Current - Average Rectified (Io): 1A Capacitance @ Vr, F: 3pF @ 4V, 1MHz Technology: Standard Reverse Recovery Time (trr): 782 ns Speed: Standard Recovery >500ns, > 200mA (Io) Mounting Type: Surface Mount Package / Case: 2-SMD, Flat Leads Packaging: Tape & Reel (TR) |
на замовлення 129000 шт: термін постачання 21-31 дні (днів) |
|
||||||||||||||||||
|
|
SS13HE | onsemi |
Description: DIODE SCHOTTKY 30V 1A SOD323HE Packaging: Tape & Reel (TR) Package / Case: 2-SMD, Flat Leads Mounting Type: Surface Mount Speed: Fast Recovery =< 500ns, > 200mA (Io) Reverse Recovery Time (trr): 5.6 ns Technology: Schottky Capacitance @ Vr, F: 55pF @ 4V, 1MHz Current - Average Rectified (Io): 1A Supplier Device Package: SOD-323HE Operating Temperature - Junction: -55°C ~ 150°C Part Status: Active Voltage - DC Reverse (Vr) (Max): 30 V Voltage - Forward (Vf) (Max) @ If: 550 mV @ 1 A Current - Reverse Leakage @ Vr: 50 µA @ 30 V |
на замовлення 60000 шт: термін постачання 21-31 дні (днів) |
|
||||||||||||||||||
|
|
SS14HE | onsemi |
Description: DIODE SCHOTTKY 40V 1A SOD323HE Packaging: Tape & Reel (TR) Package / Case: 2-SMD, Flat Leads Mounting Type: Surface Mount Speed: Fast Recovery =< 500ns, > 200mA (Io) Reverse Recovery Time (trr): 5.6 ns Technology: Schottky Capacitance @ Vr, F: 55pF @ 4V, 1MHz Current - Average Rectified (Io): 1A Supplier Device Package: SOD-323HE Operating Temperature - Junction: -55°C ~ 150°C Voltage - DC Reverse (Vr) (Max): 40 V Voltage - Forward (Vf) (Max) @ If: 550 mV @ 1 A Current - Reverse Leakage @ Vr: 50 µA @ 40 V |
на замовлення 228000 шт: термін постачання 21-31 дні (днів) |
|
||||||||||||||||||
|
|
SS16HE | onsemi |
Description: DIODE SCHOTTKY 60V 1A SOD323HE Packaging: Tape & Reel (TR) Package / Case: 2-SMD, Flat Leads Mounting Type: Surface Mount Speed: Fast Recovery =< 500ns, > 200mA (Io) Reverse Recovery Time (trr): 8.3 ns Technology: Schottky Capacitance @ Vr, F: 43pF @ 4V, 1MHz Current - Average Rectified (Io): 1A Supplier Device Package: SOD-323HE Operating Temperature - Junction: -55°C ~ 150°C Part Status: Not For New Designs Voltage - DC Reverse (Vr) (Max): 60 V Voltage - Forward (Vf) (Max) @ If: 680 mV @ 1 A Current - Reverse Leakage @ Vr: 50 µA @ 60 V Grade: Automotive Qualification: AEC-Q101 |
на замовлення 358000 шт: термін постачання 21-31 дні (днів) |
|
||||||||||||||||||
|
|
FAN49103AUC340X | onsemi |
Description: IC REG BCK BST PROG/3.4V 20WLCSP Voltage - Output (Min/Fixed): 2.8V, 3.4V Voltage - Input (Min): 2.5V Voltage - Output (Max): 4V Synchronous Rectifier: Yes Supplier Device Package: 20-WLCSP (1.96x1.56) Topology: Buck-Boost Voltage - Input (Max): 5.5V Frequency - Switching: 1.8MHz Output Configuration: Positive Operating Temperature: -40°C ~ 85°C (TA) Current - Output: 2.5A Function: Step-Up/Step-Down Number of Outputs: 1 Mounting Type: Surface Mount Output Type: Programmable (Fixed) Package / Case: 20-UFBGA, WLCSP Packaging: Cut Tape (CT) |
на замовлення 5295 шт: термін постачання 21-31 дні (днів) |
|
||||||||||||||||||
|
|
FDB0170N607L | onsemi |
Description: MOSFET N-CH 60V 300A TO263-7 Packaging: Cut Tape (CT) Package / Case: TO-263-7, D2PAK (6 Leads + Tab) Mounting Type: Surface Mount Operating Temperature: -55°C ~ 175°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 300A (Tc) Rds On (Max) @ Id, Vgs: 1.4mOhm @ 39A, 10V Power Dissipation (Max): 3.8W (Ta), 250W (Tc) Vgs(th) (Max) @ Id: 4V @ 250µA Supplier Device Package: TO-263-7 Part Status: Active Drive Voltage (Max Rds On, Min Rds On): 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 60 V Gate Charge (Qg) (Max) @ Vgs: 243 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 19250 pF @ 30 V |
на замовлення 1661 шт: термін постачання 21-31 дні (днів) |
|
||||||||||||||||||
|
|
FDB0190N807L | onsemi |
Description: MOSFET N-CH 80V 270A TO263-7 Packaging: Cut Tape (CT) Package / Case: TO-263-7, D2PAK (6 Leads + Tab) Mounting Type: Surface Mount Operating Temperature: -55°C ~ 175°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 270A (Tc) Rds On (Max) @ Id, Vgs: 1.7mOhm @ 34A, 10V Power Dissipation (Max): 3.8W (Ta), 250W (Tc) Vgs(th) (Max) @ Id: 4V @ 250µA Supplier Device Package: TO-263-7 Part Status: Active Drive Voltage (Max Rds On, Min Rds On): 8V, 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 80 V Gate Charge (Qg) (Max) @ Vgs: 249 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 19110 pF @ 40 V |
на замовлення 800 шт: термін постачання 21-31 дні (днів) |
|
||||||||||||||||||
|
|
FDB0250N807L | onsemi |
Description: MOSFET N-CH 80V 240A TO263-7 Packaging: Cut Tape (CT) Package / Case: TO-263-7, D2PAK (6 Leads + Tab) Mounting Type: Surface Mount Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 240A (Tc) Rds On (Max) @ Id, Vgs: 2.2mOhm @ 30A, 10V Power Dissipation (Max): 3.8W (Ta), 214W (Tc) Vgs(th) (Max) @ Id: 4V @ 250µA Supplier Device Package: TO-263-7 Part Status: Active Drive Voltage (Max Rds On, Min Rds On): 8V, 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 80 V Gate Charge (Qg) (Max) @ Vgs: 200 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 15400 pF @ 40 V |
на замовлення 290 шт: термін постачання 21-31 дні (днів) |
|
||||||||||||||||||
|
|
FDB0300N1007L | onsemi |
Description: MOSFET N-CH 100V 200A TO263-7 Packaging: Cut Tape (CT) Package / Case: TO-263-7, D2PAK (6 Leads + Tab) Mounting Type: Surface Mount Operating Temperature: -55°C ~ 175°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 200A (Tc) Rds On (Max) @ Id, Vgs: 3mOhm @ 26A, 10V Power Dissipation (Max): 3.8W (Ta), 250W (Tc) Vgs(th) (Max) @ Id: 4V @ 250µA Supplier Device Package: TO-263-7 Part Status: Active Drive Voltage (Max Rds On, Min Rds On): 6V, 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 100 V Gate Charge (Qg) (Max) @ Vgs: 113 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 8295 pF @ 50 V |
на замовлення 44 шт: термін постачання 21-31 дні (днів) |
|
||||||||||||||||||
|
|
FDBL86566-F085 | onsemi |
Description: MOSFET N-CH 60V 240A 8HPSOF Packaging: Cut Tape (CT) Package / Case: 8-PowerSFN Mounting Type: Surface Mount Operating Temperature: -55°C ~ 175°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 240A (Tc) Rds On (Max) @ Id, Vgs: 2.4mOhm @ 80A, 10V Power Dissipation (Max): 300W (Tj) Vgs(th) (Max) @ Id: 4V @ 250µA Supplier Device Package: 8-HPSOF Grade: Automotive Drive Voltage (Max Rds On, Min Rds On): 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 60 V Gate Charge (Qg) (Max) @ Vgs: 110 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 6655 pF @ 30 V Qualification: AEC-Q101 |
на замовлення 19933 шт: термін постачання 21-31 дні (днів) |
|
||||||||||||||||||
|
|
FPF2595UCX | onsemi |
Description: IC PWR SWITCH P-CHAN 1:1 12WLCSP |
на замовлення 1 шт: термін постачання 21-31 дні (днів) |
В кошику од. на суму грн. | ||||||||||||||||||
|
|
S1GHE | onsemi |
Description: DIODE GEN PURP 400V 1A SOD323HE Packaging: Cut Tape (CT) Package / Case: 2-SMD, Flat Leads Mounting Type: Surface Mount Speed: Standard Recovery >500ns, > 200mA (Io) Reverse Recovery Time (trr): 782 ns Technology: Standard Capacitance @ Vr, F: 3pF @ 4V, 1MHz Current - Average Rectified (Io): 1A Supplier Device Package: SOD-323HE Operating Temperature - Junction: -55°C ~ 175°C Grade: Automotive Voltage - DC Reverse (Vr) (Max): 400 V Voltage - Forward (Vf) (Max) @ If: 1.1 V @ 1 A Current - Reverse Leakage @ Vr: 1 µA @ 400 V Qualification: AEC-Q101 |
на замовлення 131479 шт: термін постачання 21-31 дні (днів) |
|
||||||||||||||||||
|
|
SS13HE | onsemi |
Description: DIODE SCHOTTKY 30V 1A SOD323HE Packaging: Cut Tape (CT) Package / Case: 2-SMD, Flat Leads Mounting Type: Surface Mount Speed: Fast Recovery =< 500ns, > 200mA (Io) Reverse Recovery Time (trr): 5.6 ns Technology: Schottky Capacitance @ Vr, F: 55pF @ 4V, 1MHz Current - Average Rectified (Io): 1A Supplier Device Package: SOD-323HE Operating Temperature - Junction: -55°C ~ 150°C Part Status: Active Voltage - DC Reverse (Vr) (Max): 30 V Voltage - Forward (Vf) (Max) @ If: 550 mV @ 1 A Current - Reverse Leakage @ Vr: 50 µA @ 30 V |
на замовлення 60454 шт: термін постачання 21-31 дні (днів) |
|
||||||||||||||||||
|
|
SS14HE | onsemi |
Description: DIODE SCHOTTKY 40V 1A SOD323HE Packaging: Cut Tape (CT) Package / Case: 2-SMD, Flat Leads Mounting Type: Surface Mount Speed: Fast Recovery =< 500ns, > 200mA (Io) Reverse Recovery Time (trr): 5.6 ns Technology: Schottky Capacitance @ Vr, F: 55pF @ 4V, 1MHz Current - Average Rectified (Io): 1A Supplier Device Package: SOD-323HE Operating Temperature - Junction: -55°C ~ 150°C Voltage - DC Reverse (Vr) (Max): 40 V Voltage - Forward (Vf) (Max) @ If: 550 mV @ 1 A Current - Reverse Leakage @ Vr: 50 µA @ 40 V |
на замовлення 228858 шт: термін постачання 21-31 дні (днів) |
|
||||||||||||||||||
|
|
SS16HE | onsemi |
Description: DIODE SCHOTTKY 60V 1A SOD323HE Packaging: Cut Tape (CT) Package / Case: 2-SMD, Flat Leads Mounting Type: Surface Mount Speed: Fast Recovery =< 500ns, > 200mA (Io) Reverse Recovery Time (trr): 8.3 ns Technology: Schottky Capacitance @ Vr, F: 43pF @ 4V, 1MHz Current - Average Rectified (Io): 1A Supplier Device Package: SOD-323HE Operating Temperature - Junction: -55°C ~ 150°C Grade: Automotive Part Status: Not For New Designs Voltage - DC Reverse (Vr) (Max): 60 V Voltage - Forward (Vf) (Max) @ If: 680 mV @ 1 A Current - Reverse Leakage @ Vr: 50 µA @ 60 V Qualification: AEC-Q101 |
на замовлення 359359 шт: термін постачання 21-31 дні (днів) |
|
||||||||||||||||||
 |
NCP1399AADR2G | onsemi |
Description: IC OFFLINE SW HALF-BRDG 16SOIC Packaging: Tape & Reel (TR) Package / Case: 16-SOIC (0.154", 3.90mm Width), 14 Leads Mounting Type: Surface Mount Operating Temperature: -40°C ~ 125°C (TJ) Duty Cycle: 50% Frequency - Switching: 20kHz ~ 750kHz Internal Switch(s): No Output Isolation: Isolated Topology: Half-Bridge Voltage - Supply (Vcc/Vdd): 9.5V ~ 20V Supplier Device Package: 16-SOIC Fault Protection: Current Limiting, Open Loop, Over Load, Over Temperature, Over Voltage, Short Circuit Voltage - Start Up: 15.8 V |
товару немає в наявності |
Мінімальне замовлення: 2500 шт В кошику од. на суму грн. | ||||||||||||||||||
| 1N5339WS | onsemi |
Description: DIODE ZENER 5.6V 5W AXIAL Tolerance: ±5% Packaging: Bulk Operating Temperature: -65°C ~ 200°C Voltage - Zener (Nom) (Vz): 5.6 V Impedance (Max) (Zzt): 1 Ohms Part Status: Obsolete Power - Max: 5 W Voltage - Forward (Vf) (Max) @ If: 1.2 V @ 1 A Current Coupled to Voltage - Forward (Vf) (Max) @ If: 1 Voltage Coupled to Current - Reverse Leakage @ Vr: 2 Current - Reverse Leakage @ Vr: 1 µA @ 2 V |
товару немає в наявності |
В кошику од. на суму грн. | |||||||||||||||||||
| 2SK4098FS | onsemi |
Description: MOSFET N-CH 600V 6A TO220F-3FS Packaging: Bulk Package / Case: TO-220-3 Full Pack Mounting Type: Through Hole Operating Temperature: 150°C Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 6A (Tc) Rds On (Max) @ Id, Vgs: 1.1Ohm @ 3.5A, 10V Power Dissipation (Max): 2W Supplier Device Package: TO-220F-3FS Part Status: Obsolete Drive Voltage (Max Rds On, Min Rds On): 10V Vgs (Max): ±30V Drain to Source Voltage (Vdss): 600 V Gate Charge (Qg) (Max) @ Vgs: 23.5 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 600 pF @ 30 V |
товару немає в наявності |
В кошику од. на суму грн. | |||||||||||||||||||
| 2SK4125-1EX | onsemi |
Description: MOSFET N-CH 600V 17A TO3P-3L Packaging: Bulk Package / Case: TO-3P-3, SC-65-3 Mounting Type: Through Hole Operating Temperature: 150°C (TA) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 17A (Ta) Rds On (Max) @ Id, Vgs: 610mOhm @ 7A, 10V Power Dissipation (Max): 2.5W (Ta), 170W (Tc) Supplier Device Package: TO-3P-3L Part Status: Obsolete Drive Voltage (Max Rds On, Min Rds On): 10V Vgs (Max): ±30V Drain to Source Voltage (Vdss): 600 V Gate Charge (Qg) (Max) @ Vgs: 46 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 1200 pF @ 30 V |
товару немає в наявності |
В кошику од. на суму грн. | |||||||||||||||||||
|
|
NRVTSA4100ET3G | onsemi |
Description: DIODE SCHOTTKY 100V 4A SMA Packaging: Tape & Reel (TR) Package / Case: DO-214AC, SMA Mounting Type: Surface Mount Speed: Fast Recovery =< 500ns, > 200mA (Io) Technology: Schottky Capacitance @ Vr, F: 55pF @ 4V, 1MHz Current - Average Rectified (Io): 4A Supplier Device Package: SMA Operating Temperature - Junction: -55°C ~ 175°C Grade: Automotive Part Status: Active Voltage - DC Reverse (Vr) (Max): 100 V Voltage - Forward (Vf) (Max) @ If: 680 mV @ 4 A Current - Reverse Leakage @ Vr: 9 µA @ 100 V Qualification: AEC-Q101 |
товару немає в наявності |
Мінімальне замовлення: 5000 шт В кошику од. на суму грн. | ||||||||||||||||||
|
|
FGY160T65SPD-F085 | onsemi |
Description: IGBT TRENCH FS 650V 240A TO-247 Packaging: Tube Package / Case: TO-247-3 Mounting Type: Through Hole Operating Temperature: -55°C ~ 175°C (TJ) Input Type: Standard Reverse Recovery Time (trr): 132 ns Vce(on) (Max) @ Vge, Ic: 2.05V @ 15V, 160A Supplier Device Package: TO-247-3 IGBT Type: Trench Field Stop Td (on/off) @ 25°C: 53ns/98ns Switching Energy: 12.4mJ (on), 5.7mJ (off) Test Condition: 400V, 160A, 15V Grade: Automotive Part Status: Active Current - Collector (Ic) (Max): 240 A Voltage - Collector Emitter Breakdown (Max): 650 V Current - Collector Pulsed (Icm): 480 A Power - Max: 882 W Qualification: AEC-Q101 |
на замовлення 213 шт: термін постачання 21-31 дні (днів) |
|
||||||||||||||||||
 |
FNB81060T3 | onsemi |
Description: MODULE SPM 600V 10A 25PWRDIP Packaging: Tube Package / Case: 25-PowerDIP Module (0.815", 20.70mm) Mounting Type: Through Hole Type: IGBT Configuration: 3 Phase Voltage - Isolation: 1500Vrms Current: 10 A Voltage: 600 V |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||||||||||||
 |
FODM1007 | onsemi |
Description: OPTOISO 5KV 1CH TRANS LSOP4 Packaging: Tube Package / Case: 4-SMD, Gull Wing Output Type: Transistor Mounting Type: Surface Mount Operating Temperature: -40°C ~ 110°C Voltage - Forward (Vf) (Typ): 1.4V Input Type: DC Current - Output / Channel: 50mA Voltage - Isolation: 5000Vrms Current Transfer Ratio (Min): 80% @ 5mA Vce Saturation (Max): 300mV Current Transfer Ratio (Max): 160% @ 5mA Supplier Device Package: 4-SOP Voltage - Output (Max): 70V Rise / Fall Time (Typ): 5.7µs, 8.5µs Part Status: Active Number of Channels: 1 Current - DC Forward (If) (Max): 50 mA |
на замовлення 67342 шт: термін постачання 21-31 дні (днів) |
|
||||||||||||||||||
|
|
FODM1009 | onsemi |
Description: OPTOISO 5KV 1CH TRANS LSOP4 Packaging: Tube Package / Case: 4-SMD, Gull Wing Output Type: Transistor Mounting Type: Surface Mount Operating Temperature: -40°C ~ 110°C Voltage - Forward (Vf) (Typ): 1.4V Input Type: DC Current - Output / Channel: 50mA Voltage - Isolation: 5000Vrms Current Transfer Ratio (Min): 200% @ 5mA Vce Saturation (Max): 300mV Current Transfer Ratio (Max): 400% @ 5mA Supplier Device Package: 4-SOP Voltage - Output (Max): 70V Rise / Fall Time (Typ): 5.7µs, 8.5µs Part Status: Active Number of Channels: 1 Current - DC Forward (If) (Max): 50 mA |
на замовлення 85 шт: термін постачання 21-31 дні (днів) |
|
||||||||||||||||||
 |
FAN54511AUCX | onsemi |
Description: IC BATT CHG LI-ION 1CELL 63WLCSP Packaging: Tape & Reel (TR) Package / Case: 63-UFBGA, WLCSP Number of Cells: 1 Mounting Type: Surface Mount Interface: I2C, USB Battery Chemistry: Lithium Ion/Polymer Supplier Device Package: 63-WLCSP Charge Current - Max: 3.2A Programmable Features: Timer Fault Protection: Over Temperature Voltage - Supply (Max): 13.2V Current - Charging: Constant - Programmable Part Status: Obsolete |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||||||||||||
|
|
FODM1007R2 | onsemi |
Description: OPTOISO 5KV 1CH TRANS LSOP4 Packaging: Tape & Reel (TR) Package / Case: 4-SMD, Gull Wing Output Type: Transistor Mounting Type: Surface Mount Operating Temperature: -40°C ~ 110°C Voltage - Forward (Vf) (Typ): 1.4V Input Type: DC Current - Output / Channel: 50mA Voltage - Isolation: 5000Vrms Current Transfer Ratio (Min): 80% @ 5mA Vce Saturation (Max): 300mV Current Transfer Ratio (Max): 160% @ 5mA Supplier Device Package: 4-SOP Voltage - Output (Max): 70V Rise / Fall Time (Typ): 5.7µs, 8.5µs Part Status: Active Number of Channels: 1 Current - DC Forward (If) (Max): 50 mA |
товару немає в наявності |
Мінімальне замовлення: 3000 шт В кошику од. на суму грн. | ||||||||||||||||||
|
|
FODM1009R2 | onsemi |
Description: OPTOISO 5KV 1CH TRANS LSOP4 Packaging: Tape & Reel (TR) Package / Case: 4-SMD, Gull Wing Output Type: Transistor Mounting Type: Surface Mount Operating Temperature: -40°C ~ 110°C Voltage - Forward (Vf) (Typ): 1.4V Input Type: DC Current - Output / Channel: 50mA Voltage - Isolation: 5000Vrms Current Transfer Ratio (Min): 200% @ 5mA Vce Saturation (Max): 300mV Current Transfer Ratio (Max): 400% @ 5mA Supplier Device Package: 4-SOP Voltage - Output (Max): 70V Rise / Fall Time (Typ): 5.7µs, 8.5µs Part Status: Active Number of Channels: 1 Current - DC Forward (If) (Max): 50 mA |
на замовлення 3000 шт: термін постачання 21-31 дні (днів) |
|
||||||||||||||||||
|
|
FODM1007R2 | onsemi |
Description: OPTOISO 5KV 1CH TRANS LSOP4 Packaging: Cut Tape (CT) Package / Case: 4-SMD, Gull Wing Output Type: Transistor Mounting Type: Surface Mount Operating Temperature: -40°C ~ 110°C Voltage - Forward (Vf) (Typ): 1.4V Input Type: DC Current - Output / Channel: 50mA Voltage - Isolation: 5000Vrms Current Transfer Ratio (Min): 80% @ 5mA Vce Saturation (Max): 300mV Current Transfer Ratio (Max): 160% @ 5mA Supplier Device Package: 4-SOP Voltage - Output (Max): 70V Rise / Fall Time (Typ): 5.7µs, 8.5µs Part Status: Active Number of Channels: 1 Current - DC Forward (If) (Max): 50 mA |
на замовлення 253 шт: термін постачання 21-31 дні (днів) |
|
||||||||||||||||||
|
|
FODM1009R2 | onsemi |
Description: OPTOISO 5KV 1CH TRANS LSOP4 Packaging: Cut Tape (CT) Package / Case: 4-SMD, Gull Wing Output Type: Transistor Mounting Type: Surface Mount Operating Temperature: -40°C ~ 110°C Voltage - Forward (Vf) (Typ): 1.4V Input Type: DC Current - Output / Channel: 50mA Voltage - Isolation: 5000Vrms Current Transfer Ratio (Min): 200% @ 5mA Vce Saturation (Max): 300mV Current Transfer Ratio (Max): 400% @ 5mA Supplier Device Package: 4-SOP Voltage - Output (Max): 70V Rise / Fall Time (Typ): 5.7µs, 8.5µs Part Status: Active Number of Channels: 1 Current - DC Forward (If) (Max): 50 mA |
на замовлення 4791 шт: термін постачання 21-31 дні (днів) |
|
||||||||||||||||||
|
|
FDD86569-F085 | onsemi |
Description: MOSFET N-CH 60V 90A DPAK Packaging: Cut Tape (CT) Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63 Mounting Type: Surface Mount Operating Temperature: -55°C ~ 175°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 90A (Tc) Rds On (Max) @ Id, Vgs: 5.7mOhm @ 80A, 10V Power Dissipation (Max): 150W (Tj) Vgs(th) (Max) @ Id: 4V @ 250µA Supplier Device Package: TO-252AA Grade: Automotive Drive Voltage (Max Rds On, Min Rds On): 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 60 V Gate Charge (Qg) (Max) @ Vgs: 52 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 2520 pF @ 30 V Qualification: AEC-Q101 |
на замовлення 13895 шт: термін постачання 21-31 дні (днів) |
|
| VEC2315-TL-W |
|
Виробник: onsemi
Description: MOSFET 2P-CH 60V 2.5A VEC8
Part Status: Obsolete
Supplier Device Package: SOT-28FL/VEC8
Vgs(th) (Max) @ Id: 2.6V @ 1mA
FET Feature: Logic Level Gate, 4V Drive
Gate Charge (Qg) (Max) @ Vgs: 11nC @ 10V
Rds On (Max) @ Id, Vgs: 137mOhm @ 1.5A, 10V
Input Capacitance (Ciss) (Max) @ Vds: 420pF @ 20V
Current - Continuous Drain (Id) @ 25°C: 2.5A
Drain to Source Voltage (Vdss): 60V
Power - Max: 1W
Technology: MOSFET (Metal Oxide)
Operating Temperature: 150°C (TJ)
Configuration: 2 P-Channel (Dual)
Mounting Type: Surface Mount
Package / Case: 8-SMD, Flat Lead
Packaging: Cut Tape (CT)
Description: MOSFET 2P-CH 60V 2.5A VEC8
Part Status: Obsolete
Supplier Device Package: SOT-28FL/VEC8
Vgs(th) (Max) @ Id: 2.6V @ 1mA
FET Feature: Logic Level Gate, 4V Drive
Gate Charge (Qg) (Max) @ Vgs: 11nC @ 10V
Rds On (Max) @ Id, Vgs: 137mOhm @ 1.5A, 10V
Input Capacitance (Ciss) (Max) @ Vds: 420pF @ 20V
Current - Continuous Drain (Id) @ 25°C: 2.5A
Drain to Source Voltage (Vdss): 60V
Power - Max: 1W
Technology: MOSFET (Metal Oxide)
Operating Temperature: 150°C (TJ)
Configuration: 2 P-Channel (Dual)
Mounting Type: Surface Mount
Package / Case: 8-SMD, Flat Lead
Packaging: Cut Tape (CT)
товару немає в наявності
В кошику
од. на суму грн.
| LE25S161XATAG |
|
Виробник: onsemi
Description: IC FLASH 16MBIT SPI 70MHZ 8WLCSP
DigiKey Programmable: Not Verified
Memory Organization: 2M x 8
Memory Interface: SPI
Write Cycle Time - Word, Page: 700µs
Supplier Device Package: 8-WLCSP (2.92x1.53)
Memory Format: FLASH
Clock Frequency: 70 MHz
Technology: FLASH
Voltage - Supply: 1.65V ~ 1.95V
Operating Temperature: -40°C ~ 90°C (TA)
Memory Type: Non-Volatile
Memory Size: 16Mbit
Mounting Type: Surface Mount
Package / Case: 8-XFBGA, WLCSP
Packaging: Cut Tape (CT)
Description: IC FLASH 16MBIT SPI 70MHZ 8WLCSP
DigiKey Programmable: Not Verified
Memory Organization: 2M x 8
Memory Interface: SPI
Write Cycle Time - Word, Page: 700µs
Supplier Device Package: 8-WLCSP (2.92x1.53)
Memory Format: FLASH
Clock Frequency: 70 MHz
Technology: FLASH
Voltage - Supply: 1.65V ~ 1.95V
Operating Temperature: -40°C ~ 90°C (TA)
Memory Type: Non-Volatile
Memory Size: 16Mbit
Mounting Type: Surface Mount
Package / Case: 8-XFBGA, WLCSP
Packaging: Cut Tape (CT)
товару немає в наявності
В кошику
од. на суму грн.
| 1N5370BRLG |
|
Виробник: onsemi
Description: DIODE ZENER 56V 5W AXIAL
Packaging: Cut Tape (CT)
Tolerance: ±5%
Package / Case: Axial
Mounting Type: Through Hole
Operating Temperature: -65°C ~ 200°C
Voltage - Zener (Nom) (Vz): 56 V
Impedance (Max) (Zzt): 35 Ohms
Supplier Device Package: Axial
Power - Max: 5 W
Voltage - Forward (Vf) (Max) @ If: 1.2 V @ 1 A
Current - Reverse Leakage @ Vr: 500 nA @ 42.6 V
Description: DIODE ZENER 56V 5W AXIAL
Packaging: Cut Tape (CT)
Tolerance: ±5%
Package / Case: Axial
Mounting Type: Through Hole
Operating Temperature: -65°C ~ 200°C
Voltage - Zener (Nom) (Vz): 56 V
Impedance (Max) (Zzt): 35 Ohms
Supplier Device Package: Axial
Power - Max: 5 W
Voltage - Forward (Vf) (Max) @ If: 1.2 V @ 1 A
Current - Reverse Leakage @ Vr: 500 nA @ 42.6 V
на замовлення 25197 шт:
термін постачання 21-31 дні (днів)
| Кількість | Ціна без ПДВ |
|---|---|
| 17+ | 18.40 грн |
| 22+ | 13.67 грн |
| 100+ | 11.08 грн |
| 500+ | 9.50 грн |
| 1N5374BRLG |
|
Виробник: onsemi
Description: DIODE ZENER 75V 5W AXIAL
Packaging: Cut Tape (CT)
Tolerance: ±5%
Package / Case: Axial
Mounting Type: Through Hole
Operating Temperature: -65°C ~ 200°C
Voltage - Zener (Nom) (Vz): 75 V
Impedance (Max) (Zzt): 45 Ohms
Supplier Device Package: Axial
Part Status: Active
Power - Max: 5 W
Voltage - Forward (Vf) (Max) @ If: 1.2 V @ 1 A
Current - Reverse Leakage @ Vr: 500 nA @ 56 V
Description: DIODE ZENER 75V 5W AXIAL
Packaging: Cut Tape (CT)
Tolerance: ±5%
Package / Case: Axial
Mounting Type: Through Hole
Operating Temperature: -65°C ~ 200°C
Voltage - Zener (Nom) (Vz): 75 V
Impedance (Max) (Zzt): 45 Ohms
Supplier Device Package: Axial
Part Status: Active
Power - Max: 5 W
Voltage - Forward (Vf) (Max) @ If: 1.2 V @ 1 A
Current - Reverse Leakage @ Vr: 500 nA @ 56 V
на замовлення 11990 шт:
термін постачання 21-31 дні (днів)
| Кількість | Ціна без ПДВ |
|---|---|
| 17+ | 18.40 грн |
| 24+ | 12.72 грн |
| 100+ | 12.15 грн |
| 500+ | 10.22 грн |
| 1000+ | 9.50 грн |
| 1N5375BRLG |
|
Виробник: onsemi
Description: DIODE ZENER 82V 5W AXIAL
Packaging: Cut Tape (CT)
Tolerance: ±5%
Package / Case: Axial
Mounting Type: Through Hole
Operating Temperature: -65°C ~ 200°C
Voltage - Zener (Nom) (Vz): 82 V
Impedance (Max) (Zzt): 65 Ohms
Supplier Device Package: Axial
Part Status: Active
Power - Max: 5 W
Voltage - Forward (Vf) (Max) @ If: 1.2 V @ 1 A
Current - Reverse Leakage @ Vr: 500 nA @ 62.2 V
Description: DIODE ZENER 82V 5W AXIAL
Packaging: Cut Tape (CT)
Tolerance: ±5%
Package / Case: Axial
Mounting Type: Through Hole
Operating Temperature: -65°C ~ 200°C
Voltage - Zener (Nom) (Vz): 82 V
Impedance (Max) (Zzt): 65 Ohms
Supplier Device Package: Axial
Part Status: Active
Power - Max: 5 W
Voltage - Forward (Vf) (Max) @ If: 1.2 V @ 1 A
Current - Reverse Leakage @ Vr: 500 nA @ 62.2 V
на замовлення 23048 шт:
термін постачання 21-31 дні (днів)
| Кількість | Ціна без ПДВ |
|---|---|
| 7+ | 49.59 грн |
| 11+ | 29.48 грн |
| 100+ | 18.94 грн |
| 500+ | 13.48 грн |
| 1000+ | 12.10 грн |
| 2000+ | 10.94 грн |
| 1N5380BRLG |
|
Виробник: onsemi
Description: DIODE ZENER 120V 5W AXIAL
Packaging: Cut Tape (CT)
Tolerance: ±5%
Package / Case: Axial
Mounting Type: Through Hole
Operating Temperature: -65°C ~ 200°C
Voltage - Zener (Nom) (Vz): 120 V
Impedance (Max) (Zzt): 170 Ohms
Supplier Device Package: Axial
Part Status: Active
Power - Max: 5 W
Voltage - Forward (Vf) (Max) @ If: 1.2 V @ 1 A
Current - Reverse Leakage @ Vr: 500 nA @ 91.2 V
Description: DIODE ZENER 120V 5W AXIAL
Packaging: Cut Tape (CT)
Tolerance: ±5%
Package / Case: Axial
Mounting Type: Through Hole
Operating Temperature: -65°C ~ 200°C
Voltage - Zener (Nom) (Vz): 120 V
Impedance (Max) (Zzt): 170 Ohms
Supplier Device Package: Axial
Part Status: Active
Power - Max: 5 W
Voltage - Forward (Vf) (Max) @ If: 1.2 V @ 1 A
Current - Reverse Leakage @ Vr: 500 nA @ 91.2 V
на замовлення 2072 шт:
термін постачання 21-31 дні (днів)
| Кількість | Ціна без ПДВ |
|---|---|
| 6+ | 53.47 грн |
| 10+ | 32.01 грн |
| 100+ | 20.57 грн |
| 500+ | 14.69 грн |
| 1000+ | 13.20 грн |
| 2000+ | 11.95 грн |
| MC7915BD2TR4G |
|
Виробник: onsemi
Description: IC REG LINEAR -15V 1A D2PAK-3
Packaging: Cut Tape (CT)
Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
Output Type: Fixed
Mounting Type: Surface Mount
Current - Output: 1A
Operating Temperature: -40°C ~ 125°C
Output Configuration: Negative
Voltage - Input (Max): -35V
Number of Regulators: 1
Supplier Device Package: D2PAK-3
Voltage - Output (Min/Fixed): -15V
Part Status: Active
PSRR: 60dB (120Hz)
Voltage Dropout (Max): 1.3V @ 1A (Typ)
Protection Features: Over Current, Over Temperature
Description: IC REG LINEAR -15V 1A D2PAK-3
Packaging: Cut Tape (CT)
Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
Output Type: Fixed
Mounting Type: Surface Mount
Current - Output: 1A
Operating Temperature: -40°C ~ 125°C
Output Configuration: Negative
Voltage - Input (Max): -35V
Number of Regulators: 1
Supplier Device Package: D2PAK-3
Voltage - Output (Min/Fixed): -15V
Part Status: Active
PSRR: 60dB (120Hz)
Voltage Dropout (Max): 1.3V @ 1A (Typ)
Protection Features: Over Current, Over Temperature
на замовлення 4220 шт:
термін постачання 21-31 дні (днів)
| Кількість | Ціна без ПДВ |
|---|---|
| 6+ | 54.24 грн |
| 10+ | 37.24 грн |
| 25+ | 33.49 грн |
| 100+ | 27.54 грн |
| 250+ | 25.69 грн |
| NTNS3193NZT5G |
|
Виробник: onsemi
Description: MOSFET N-CH 20V 224MA 3XLLGA
Packaging: Cut Tape (CT)
Package / Case: 3-XFLGA
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 224mA (Ta)
Rds On (Max) @ Id, Vgs: 1.4Ohm @ 100mA, 4.5V
Power Dissipation (Max): 120mW (Ta)
Vgs(th) (Max) @ Id: 1V @ 250µA
Supplier Device Package: 3-XLLGA (0.62x0.62)
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 1.5V, 4.5V
Vgs (Max): ±8V
Drain to Source Voltage (Vdss): 20 V
Gate Charge (Qg) (Max) @ Vgs: 0.7 nC @ 4.5 V
Input Capacitance (Ciss) (Max) @ Vds: 15.8 pF @ 15 V
Description: MOSFET N-CH 20V 224MA 3XLLGA
Packaging: Cut Tape (CT)
Package / Case: 3-XFLGA
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 224mA (Ta)
Rds On (Max) @ Id, Vgs: 1.4Ohm @ 100mA, 4.5V
Power Dissipation (Max): 120mW (Ta)
Vgs(th) (Max) @ Id: 1V @ 250µA
Supplier Device Package: 3-XLLGA (0.62x0.62)
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 1.5V, 4.5V
Vgs (Max): ±8V
Drain to Source Voltage (Vdss): 20 V
Gate Charge (Qg) (Max) @ Vgs: 0.7 nC @ 4.5 V
Input Capacitance (Ciss) (Max) @ Vds: 15.8 pF @ 15 V
на замовлення 89367 шт:
термін постачання 21-31 дні (днів)
| Кількість | Ціна без ПДВ |
|---|---|
| 9+ | 35.65 грн |
| 15+ | 20.82 грн |
| 100+ | 13.19 грн |
| 500+ | 9.28 грн |
| 1000+ | 8.28 грн |
| 2000+ | 7.43 грн |
| 1SMA5926BT3G |
|
Виробник: onsemi
Description: DIODE ZENER 11V 1.5W SMA
Current - Reverse Leakage @ Vr: 500 nA @ 8.4 V
Voltage - Forward (Vf) (Max) @ If: 1.2 V @ 200 mA
Power - Max: 1.5 W
Supplier Device Package: SMA
Impedance (Max) (Zzt): 5.5 Ohms
Voltage - Zener (Nom) (Vz): 11 V
Operating Temperature: -65°C ~ 150°C
Mounting Type: Surface Mount
Package / Case: DO-214AC, SMA
Tolerance: ±5%
Packaging: Cut Tape (CT)
Description: DIODE ZENER 11V 1.5W SMA
Current - Reverse Leakage @ Vr: 500 nA @ 8.4 V
Voltage - Forward (Vf) (Max) @ If: 1.2 V @ 200 mA
Power - Max: 1.5 W
Supplier Device Package: SMA
Impedance (Max) (Zzt): 5.5 Ohms
Voltage - Zener (Nom) (Vz): 11 V
Operating Temperature: -65°C ~ 150°C
Mounting Type: Surface Mount
Package / Case: DO-214AC, SMA
Tolerance: ±5%
Packaging: Cut Tape (CT)
на замовлення 8350 шт:
термін постачання 21-31 дні (днів)
| Кількість | Ціна без ПДВ |
|---|---|
| 13+ | 25.57 грн |
| 23+ | 12.98 грн |
| 100+ | 11.03 грн |
| 500+ | 8.00 грн |
| 1000+ | 6.62 грн |
| MC14050BDTR2G |
|
Виробник: onsemi
Description: IC BUFF NON-INVERT 18V 16-TSSOP
Part Status: Active
Supplier Device Package: 16-TSSOP
Current - Output High, Low: 10mA, 40mA
Number of Bits per Element: 1
Voltage - Supply: 3V ~ 18V
Operating Temperature: -55°C ~ 125°C (TA)
Logic Type: Buffer, Non-Inverting
Number of Elements: 6
Mounting Type: Surface Mount
Output Type: Push-Pull
Package / Case: 16-TSSOP (0.173", 4.40mm Width)
Packaging: Cut Tape (CT)
Description: IC BUFF NON-INVERT 18V 16-TSSOP
Part Status: Active
Supplier Device Package: 16-TSSOP
Current - Output High, Low: 10mA, 40mA
Number of Bits per Element: 1
Voltage - Supply: 3V ~ 18V
Operating Temperature: -55°C ~ 125°C (TA)
Logic Type: Buffer, Non-Inverting
Number of Elements: 6
Mounting Type: Surface Mount
Output Type: Push-Pull
Package / Case: 16-TSSOP (0.173", 4.40mm Width)
Packaging: Cut Tape (CT)
товару немає в наявності
В кошику
од. на суму грн.
| MC14082BDR2G |
|
Виробник: onsemi
Description: IC GATE AND 2CH 4-INP 14SOIC
Current - Quiescent (Max): 1 µA
Number of Circuits: 2
Max Propagation Delay @ V, Max CL: 100ns @ 15V, 50pF
Input Logic Level - Low: 1.5V ~ 4V
Input Logic Level - High: 3.5V ~ 11V
Supplier Device Package: 14-SOIC
Number of Inputs: 4
Current - Output High, Low: 8.8mA, 8.8mA
Voltage - Supply: 3V ~ 18V
Operating Temperature: -55°C ~ 125°C
Logic Type: AND Gate
Mounting Type: Surface Mount
Package / Case: 14-SOIC (0.154", 3.90mm Width)
Packaging: Cut Tape (CT)
Description: IC GATE AND 2CH 4-INP 14SOIC
Current - Quiescent (Max): 1 µA
Number of Circuits: 2
Max Propagation Delay @ V, Max CL: 100ns @ 15V, 50pF
Input Logic Level - Low: 1.5V ~ 4V
Input Logic Level - High: 3.5V ~ 11V
Supplier Device Package: 14-SOIC
Number of Inputs: 4
Current - Output High, Low: 8.8mA, 8.8mA
Voltage - Supply: 3V ~ 18V
Operating Temperature: -55°C ~ 125°C
Logic Type: AND Gate
Mounting Type: Surface Mount
Package / Case: 14-SOIC (0.154", 3.90mm Width)
Packaging: Cut Tape (CT)
на замовлення 11696 шт:
термін постачання 21-31 дні (днів)
| Кількість | Ціна без ПДВ |
|---|---|
| 5+ | 71.29 грн |
| 10+ | 41.41 грн |
| 25+ | 34.33 грн |
| 100+ | 24.68 грн |
| 250+ | 20.97 грн |
| 500+ | 18.69 грн |
| 1000+ | 16.50 грн |
| MC74HC238ADTR2G |
|
Виробник: onsemi
Description: IC DECODER/DEMUX 1X3:8 16-TSSOP
Packaging: Cut Tape (CT)
Package / Case: 16-TSSOP (0.173", 4.40mm Width)
Mounting Type: Surface Mount
Circuit: 1 x 3:8
Type: Decoder/Demultiplexer
Operating Temperature: -55°C ~ 125°C
Voltage - Supply: 2V ~ 6V
Independent Circuits: 1
Current - Output High, Low: 5.2mA, 5.2mA
Voltage Supply Source: Single Supply
Supplier Device Package: 16-TSSOP
Part Status: Active
Description: IC DECODER/DEMUX 1X3:8 16-TSSOP
Packaging: Cut Tape (CT)
Package / Case: 16-TSSOP (0.173", 4.40mm Width)
Mounting Type: Surface Mount
Circuit: 1 x 3:8
Type: Decoder/Demultiplexer
Operating Temperature: -55°C ~ 125°C
Voltage - Supply: 2V ~ 6V
Independent Circuits: 1
Current - Output High, Low: 5.2mA, 5.2mA
Voltage Supply Source: Single Supply
Supplier Device Package: 16-TSSOP
Part Status: Active
на замовлення 23420 шт:
термін постачання 21-31 дні (днів)
| Кількість | Ціна без ПДВ |
|---|---|
| 13+ | 24.02 грн |
| 19+ | 15.82 грн |
| 25+ | 14.06 грн |
| 100+ | 11.38 грн |
| 250+ | 10.52 грн |
| 500+ | 9.99 грн |
| 1000+ | 9.41 грн |
| MC7815CDTRKG |
|
Виробник: onsemi
Description: IC REG LINEAR 15V 1A DPAK
Packaging: Cut Tape (CT)
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Output Type: Fixed
Mounting Type: Surface Mount
Current - Output: 1A
Operating Temperature: 0°C ~ 125°C
Output Configuration: Positive
Current - Quiescent (Iq): 6.5 mA
Voltage - Input (Max): 35V
Number of Regulators: 1
Supplier Device Package: DPAK
Voltage - Output (Min/Fixed): 15V
Part Status: Active
PSRR: 58dB (120Hz)
Voltage Dropout (Max): 2V @ 1A (Typ)
Protection Features: Over Temperature, Short Circuit
Description: IC REG LINEAR 15V 1A DPAK
Packaging: Cut Tape (CT)
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Output Type: Fixed
Mounting Type: Surface Mount
Current - Output: 1A
Operating Temperature: 0°C ~ 125°C
Output Configuration: Positive
Current - Quiescent (Iq): 6.5 mA
Voltage - Input (Max): 35V
Number of Regulators: 1
Supplier Device Package: DPAK
Voltage - Output (Min/Fixed): 15V
Part Status: Active
PSRR: 58dB (120Hz)
Voltage Dropout (Max): 2V @ 1A (Typ)
Protection Features: Over Temperature, Short Circuit
на замовлення 6994 шт:
термін постачання 21-31 дні (днів)
| Кількість | Ціна без ПДВ |
|---|---|
| 10+ | 31.00 грн |
| 15+ | 20.74 грн |
| 25+ | 18.51 грн |
| 100+ | 15.06 грн |
| 250+ | 13.96 грн |
| 500+ | 13.29 грн |
| 1000+ | 12.54 грн |
| MC79L15ACPRAG |
|
Виробник: onsemi
Description: IC REG LINEAR -15V 100MA TO92
Packaging: Cut Tape (CT)
Package / Case: TO-226-3, TO-92-3 Long Body, Formed Leads
Output Type: Fixed
Mounting Type: Through Hole
Current - Output: 100mA
Operating Temperature: 0°C ~ 125°C
Output Configuration: Negative
Voltage - Input (Max): -35V
Number of Regulators: 1
Supplier Device Package: TO-92 (TO-226)
Voltage - Output (Min/Fixed): -15V
Part Status: Active
PSRR: 39dB (120Hz)
Voltage Dropout (Max): 1.7V @ 40mA (Typ)
Protection Features: Over Temperature, Short Circuit
Description: IC REG LINEAR -15V 100MA TO92
Packaging: Cut Tape (CT)
Package / Case: TO-226-3, TO-92-3 Long Body, Formed Leads
Output Type: Fixed
Mounting Type: Through Hole
Current - Output: 100mA
Operating Temperature: 0°C ~ 125°C
Output Configuration: Negative
Voltage - Input (Max): -35V
Number of Regulators: 1
Supplier Device Package: TO-92 (TO-226)
Voltage - Output (Min/Fixed): -15V
Part Status: Active
PSRR: 39dB (120Hz)
Voltage Dropout (Max): 1.7V @ 40mA (Typ)
Protection Features: Over Temperature, Short Circuit
на замовлення 9564 шт:
термін постачання 21-31 дні (днів)
| Кількість | Ціна без ПДВ |
|---|---|
| 15+ | 20.92 грн |
| 22+ | 13.88 грн |
| 25+ | 12.30 грн |
| 100+ | 9.92 грн |
| 250+ | 9.15 грн |
| 500+ | 8.69 грн |
| 1000+ | 8.17 грн |
| MMBZ5V6ALT3G |
|
Виробник: onsemi
Description: DIODE ZENER ARRAY 6.2V SOT-23-3
Current - Reverse Leakage @ Vr: 5 µA @ 3 V
Voltage - Forward (Vf) (Max) @ If: 900 mV @ 10 mA
Power - Max: 300 mW
Voltage - Zener (Nom) (Vz): 6.2 V
Configuration: 1 Pair Common Anode
Tolerance: ±5%
Part Status: Active
Power Line Protection: No
Power - Peak Pulse: 24W
Voltage - Clamping (Max) @ Ipp: 8V
Voltage - Breakdown (Min): 5.32V
Bidirectional Channels: 1
Unidirectional Channels: 2
Supplier Device Package: SOT-23-3 (TO-236)
Voltage - Reverse Standoff (Typ): 3V
Current - Peak Pulse (10/1000µs): 3A
Applications: General Purpose
Operating Temperature: -55°C ~ 150°C (TJ)
Type: Zener
Mounting Type: Surface Mount
Package / Case: TO-236-3, SC-59, SOT-23-3
Packaging: Cut Tape (CT)
Description: DIODE ZENER ARRAY 6.2V SOT-23-3
Current - Reverse Leakage @ Vr: 5 µA @ 3 V
Voltage - Forward (Vf) (Max) @ If: 900 mV @ 10 mA
Power - Max: 300 mW
Voltage - Zener (Nom) (Vz): 6.2 V
Configuration: 1 Pair Common Anode
Tolerance: ±5%
Part Status: Active
Power Line Protection: No
Power - Peak Pulse: 24W
Voltage - Clamping (Max) @ Ipp: 8V
Voltage - Breakdown (Min): 5.32V
Bidirectional Channels: 1
Unidirectional Channels: 2
Supplier Device Package: SOT-23-3 (TO-236)
Voltage - Reverse Standoff (Typ): 3V
Current - Peak Pulse (10/1000µs): 3A
Applications: General Purpose
Operating Temperature: -55°C ~ 150°C (TJ)
Type: Zener
Mounting Type: Surface Mount
Package / Case: TO-236-3, SC-59, SOT-23-3
Packaging: Cut Tape (CT)
на замовлення 39945 шт:
термін постачання 21-31 дні (днів)
| Кількість | Ціна без ПДВ |
|---|---|
| 40+ | 7.75 грн |
| 55+ | 5.45 грн |
| 129+ | 2.32 грн |
| 500+ | 2.06 грн |
| 1000+ | 1.87 грн |
| 2000+ | 1.85 грн |
| 5000+ | 1.78 грн |
| PCA9654EDTR2G |
|
Виробник: onsemi
Description: IC XPNDR 100KHZ I2C 16TSSOP
Number of I/O: 8
Interface: I2C
Mounting Type: Surface Mount
Package / Case: 16-TSSOP (0.173", 4.40mm Width)
Features: POR
Packaging: Cut Tape (CT)
Supplier Device Package: 16-TSSOP
Interrupt Output: Yes
Clock Frequency: 100 kHz
Voltage - Supply: 1.65V ~ 5.5V
Operating Temperature: -55°C ~ 125°C
DigiKey Programmable: Not Verified
Part Status: Active
Description: IC XPNDR 100KHZ I2C 16TSSOP
Number of I/O: 8
Interface: I2C
Mounting Type: Surface Mount
Package / Case: 16-TSSOP (0.173", 4.40mm Width)
Features: POR
Packaging: Cut Tape (CT)
Supplier Device Package: 16-TSSOP
Interrupt Output: Yes
Clock Frequency: 100 kHz
Voltage - Supply: 1.65V ~ 5.5V
Operating Temperature: -55°C ~ 125°C
DigiKey Programmable: Not Verified
Part Status: Active
на замовлення 11297 шт:
термін постачання 21-31 дні (днів)
| Кількість | Ціна без ПДВ |
|---|---|
| 1+ | 320.81 грн |
| 10+ | 199.83 грн |
| 25+ | 171.27 грн |
| 100+ | 130.47 грн |
| 250+ | 115.61 грн |
| 500+ | 106.47 грн |
| 1000+ | 97.20 грн |
| EMI8143MUTAG |
|
Виробник: onsemi
Description: CMC 100MA 6LN SMD ESD
Features: TVS Diode ESD Protection
Packaging: Cut Tape (CT)
Package / Case: 16-XFDFN
Filter Type: Signal Line
Size / Dimension: 0.138" L x 0.053" W (3.50mm x 1.35mm)
Mounting Type: Surface Mount
Number of Lines: 6
Operating Temperature: -40°C ~ 85°C
Height (Max): 0.020" (0.50mm)
Current Rating (Max): 100mA
DC Resistance (DCR) (Max): 6Ohm (Typ)
Description: CMC 100MA 6LN SMD ESD
Features: TVS Diode ESD Protection
Packaging: Cut Tape (CT)
Package / Case: 16-XFDFN
Filter Type: Signal Line
Size / Dimension: 0.138" L x 0.053" W (3.50mm x 1.35mm)
Mounting Type: Surface Mount
Number of Lines: 6
Operating Temperature: -40°C ~ 85°C
Height (Max): 0.020" (0.50mm)
Current Rating (Max): 100mA
DC Resistance (DCR) (Max): 6Ohm (Typ)
на замовлення 955 шт:
термін постачання 21-31 дні (днів)
| Кількість | Ціна без ПДВ |
|---|---|
| 5+ | 68.97 грн |
| 10+ | 47.53 грн |
| 25+ | 42.92 грн |
| 100+ | 35.51 грн |
| 250+ | 33.25 грн |
| 500+ | 31.88 грн |
| ESD8351XV2T1G |
|
Виробник: onsemi
Description: TVS DIODE 3.3VWM 11.2VC SOD523
Packaging: Cut Tape (CT)
Package / Case: SC-79, SOD-523
Mounting Type: Surface Mount
Type: Zener
Operating Temperature: -55°C ~ 125°C (TJ)
Applications: General Purpose
Capacitance @ Frequency: 0.4pF @ 1MHz
Current - Peak Pulse (10/1000µs): 5A (8/20µs)
Voltage - Reverse Standoff (Typ): 3.3V (Max)
Supplier Device Package: SOD-523
Unidirectional Channels: 1
Voltage - Breakdown (Min): 5.5V
Voltage - Clamping (Max) @ Ipp: 11.2V
Power Line Protection: No
Part Status: Active
Description: TVS DIODE 3.3VWM 11.2VC SOD523
Packaging: Cut Tape (CT)
Package / Case: SC-79, SOD-523
Mounting Type: Surface Mount
Type: Zener
Operating Temperature: -55°C ~ 125°C (TJ)
Applications: General Purpose
Capacitance @ Frequency: 0.4pF @ 1MHz
Current - Peak Pulse (10/1000µs): 5A (8/20µs)
Voltage - Reverse Standoff (Typ): 3.3V (Max)
Supplier Device Package: SOD-523
Unidirectional Channels: 1
Voltage - Breakdown (Min): 5.5V
Voltage - Clamping (Max) @ Ipp: 11.2V
Power Line Protection: No
Part Status: Active
на замовлення 1978 шт:
термін постачання 21-31 дні (днів)
| Кількість | Ціна без ПДВ |
|---|---|
| 15+ | 21.70 грн |
| 24+ | 12.91 грн |
| 100+ | 8.04 грн |
| 500+ | 5.57 грн |
| 1000+ | 4.93 грн |
| MBD330DWT1G |
|
Виробник: onsemi
Description: RF DIODE SCHOTTKY 30V 120MW SC88
Packaging: Cut Tape (CT)
Package / Case: 6-TSSOP, SC-88, SOT-363
Diode Type: Schottky - 2 Independent
Operating Temperature: -55°C ~ 125°C (TJ)
Capacitance @ Vr, F: 1.5pF @ 15V, 1MHz
Voltage - Peak Reverse (Max): 30V
Supplier Device Package: SC-88/SC70-6/SOT-363
Part Status: Active
Power Dissipation (Max): 120 mW
Description: RF DIODE SCHOTTKY 30V 120MW SC88
Packaging: Cut Tape (CT)
Package / Case: 6-TSSOP, SC-88, SOT-363
Diode Type: Schottky - 2 Independent
Operating Temperature: -55°C ~ 125°C (TJ)
Capacitance @ Vr, F: 1.5pF @ 15V, 1MHz
Voltage - Peak Reverse (Max): 30V
Supplier Device Package: SC-88/SC70-6/SOT-363
Part Status: Active
Power Dissipation (Max): 120 mW
на замовлення 15000 шт:
термін постачання 21-31 дні (днів)
| Кількість | Ціна без ПДВ |
|---|---|
| 24+ | 13.17 грн |
| 36+ | 8.36 грн |
| 41+ | 7.34 грн |
| 100+ | 5.88 грн |
| 250+ | 5.38 грн |
| 500+ | 5.08 грн |
| 1000+ | 4.76 грн |
| SBAV99RWT1G |
|
Виробник: onsemi
Description: DIODE ARRAY GP 100V 215MA SC70-3
Packaging: Cut Tape (CT)
Package / Case: SC-70, SOT-323
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 6 ns
Technology: Standard
Diode Configuration: 1 Pair Series Connection
Current - Average Rectified (Io) (per Diode): 215mA (DC)
Supplier Device Package: SC-70-3 (SOT323)
Operating Temperature - Junction: -65°C ~ 150°C
Voltage - DC Reverse (Vr) (Max): 100 V
Voltage - Forward (Vf) (Max) @ If: 1.25 V @ 150 mA
Current - Reverse Leakage @ Vr: 2.5 µA @ 70 V
Description: DIODE ARRAY GP 100V 215MA SC70-3
Packaging: Cut Tape (CT)
Package / Case: SC-70, SOT-323
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 6 ns
Technology: Standard
Diode Configuration: 1 Pair Series Connection
Current - Average Rectified (Io) (per Diode): 215mA (DC)
Supplier Device Package: SC-70-3 (SOT323)
Operating Temperature - Junction: -65°C ~ 150°C
Voltage - DC Reverse (Vr) (Max): 100 V
Voltage - Forward (Vf) (Max) @ If: 1.25 V @ 150 mA
Current - Reverse Leakage @ Vr: 2.5 µA @ 70 V
на замовлення 1444 шт:
термін постачання 21-31 дні (днів)
| Кількість | Ціна без ПДВ |
|---|---|
| 13+ | 24.80 грн |
| 20+ | 14.92 грн |
| 100+ | 9.36 грн |
| 500+ | 6.51 грн |
| 1000+ | 5.77 грн |
| SMUN5213T1G |
|
Виробник: onsemi
Description: TRANS PREBIAS NPN 50V SC70-3
Packaging: Cut Tape (CT)
Package / Case: SC-70, SOT-323
Mounting Type: Surface Mount
Transistor Type: NPN - Pre-Biased
Vce Saturation (Max) @ Ib, Ic: 250mV @ 300µA, 10mA
Current - Collector Cutoff (Max): 500nA
DC Current Gain (hFE) (Min) @ Ic, Vce: 80 @ 5mA, 10V
Supplier Device Package: SC-70-3 (SOT323)
Grade: Automotive
Part Status: Active
Current - Collector (Ic) (Max): 100 mA
Voltage - Collector Emitter Breakdown (Max): 50 V
Power - Max: 202 mW
Resistor - Base (R1): 47 kOhms
Resistor - Emitter Base (R2): 47 kOhms
Qualification: AEC-Q101
Resistors Included: R1 and R2
Description: TRANS PREBIAS NPN 50V SC70-3
Packaging: Cut Tape (CT)
Package / Case: SC-70, SOT-323
Mounting Type: Surface Mount
Transistor Type: NPN - Pre-Biased
Vce Saturation (Max) @ Ib, Ic: 250mV @ 300µA, 10mA
Current - Collector Cutoff (Max): 500nA
DC Current Gain (hFE) (Min) @ Ic, Vce: 80 @ 5mA, 10V
Supplier Device Package: SC-70-3 (SOT323)
Grade: Automotive
Part Status: Active
Current - Collector (Ic) (Max): 100 mA
Voltage - Collector Emitter Breakdown (Max): 50 V
Power - Max: 202 mW
Resistor - Base (R1): 47 kOhms
Resistor - Emitter Base (R2): 47 kOhms
Qualification: AEC-Q101
Resistors Included: R1 and R2
на замовлення 3200 шт:
термін постачання 21-31 дні (днів)
| Кількість | Ціна без ПДВ |
|---|---|
| 23+ | 13.95 грн |
| 36+ | 8.36 грн |
| 100+ | 5.15 грн |
| 500+ | 3.52 грн |
| 1000+ | 3.09 грн |
| FGY120T65SPD-F085 |
|
Виробник: onsemi
Description: IGBT TRENCH FS 650V 240A TO-247
Packaging: Tube
Package / Case: TO-247-3
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 175°C (TJ)
Input Type: Standard
Reverse Recovery Time (trr): 123 ns
Vce(on) (Max) @ Vge, Ic: 1.85V @ 15V, 120A
Supplier Device Package: TO-247-3
IGBT Type: Trench Field Stop
Td (on/off) @ 25°C: 53ns/102ns
Switching Energy: 6.8mJ (on), 3.5mJ (off)
Test Condition: 400V, 120A, 5Ohm, 15V
Gate Charge: 162 nC
Part Status: Active
Current - Collector (Ic) (Max): 240 A
Voltage - Collector Emitter Breakdown (Max): 650 V
Current - Collector Pulsed (Icm): 378 A
Power - Max: 882 W
Grade: Automotive
Qualification: AEC-Q101
Description: IGBT TRENCH FS 650V 240A TO-247
Packaging: Tube
Package / Case: TO-247-3
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 175°C (TJ)
Input Type: Standard
Reverse Recovery Time (trr): 123 ns
Vce(on) (Max) @ Vge, Ic: 1.85V @ 15V, 120A
Supplier Device Package: TO-247-3
IGBT Type: Trench Field Stop
Td (on/off) @ 25°C: 53ns/102ns
Switching Energy: 6.8mJ (on), 3.5mJ (off)
Test Condition: 400V, 120A, 5Ohm, 15V
Gate Charge: 162 nC
Part Status: Active
Current - Collector (Ic) (Max): 240 A
Voltage - Collector Emitter Breakdown (Max): 650 V
Current - Collector Pulsed (Icm): 378 A
Power - Max: 882 W
Grade: Automotive
Qualification: AEC-Q101
на замовлення 301 шт:
термін постачання 21-31 дні (днів)
| Кількість | Ціна без ПДВ |
|---|---|
| 1+ | 1079.45 грн |
| 30+ | 641.37 грн |
| 120+ | 554.20 грн |
| FAN49103AUC340X |
|
Виробник: onsemi
Description: IC REG BCK BST PROG/3.4V 20WLCSP
Voltage - Output (Min/Fixed): 2.8V, 3.4V
Voltage - Input (Min): 2.5V
Voltage - Output (Max): 4V
Synchronous Rectifier: Yes
Supplier Device Package: 20-WLCSP (1.96x1.56)
Topology: Buck-Boost
Voltage - Input (Max): 5.5V
Frequency - Switching: 1.8MHz
Output Configuration: Positive
Operating Temperature: -40°C ~ 85°C (TA)
Current - Output: 2.5A
Function: Step-Up/Step-Down
Number of Outputs: 1
Mounting Type: Surface Mount
Output Type: Programmable (Fixed)
Package / Case: 20-UFBGA, WLCSP
Packaging: Tape & Reel (TR)
Description: IC REG BCK BST PROG/3.4V 20WLCSP
Voltage - Output (Min/Fixed): 2.8V, 3.4V
Voltage - Input (Min): 2.5V
Voltage - Output (Max): 4V
Synchronous Rectifier: Yes
Supplier Device Package: 20-WLCSP (1.96x1.56)
Topology: Buck-Boost
Voltage - Input (Max): 5.5V
Frequency - Switching: 1.8MHz
Output Configuration: Positive
Operating Temperature: -40°C ~ 85°C (TA)
Current - Output: 2.5A
Function: Step-Up/Step-Down
Number of Outputs: 1
Mounting Type: Surface Mount
Output Type: Programmable (Fixed)
Package / Case: 20-UFBGA, WLCSP
Packaging: Tape & Reel (TR)
на замовлення 3000 шт:
термін постачання 21-31 дні (днів)
| Кількість | Ціна без ПДВ |
|---|---|
| 3000+ | 35.36 грн |
| FDB0170N607L |
|
Виробник: onsemi
Description: MOSFET N-CH 60V 300A TO263-7
Packaging: Tape & Reel (TR)
Package / Case: TO-263-7, D2PAK (6 Leads + Tab)
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 300A (Tc)
Rds On (Max) @ Id, Vgs: 1.4mOhm @ 39A, 10V
Power Dissipation (Max): 3.8W (Ta), 250W (Tc)
Vgs(th) (Max) @ Id: 4V @ 250µA
Supplier Device Package: TO-263-7
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 60 V
Gate Charge (Qg) (Max) @ Vgs: 243 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 19250 pF @ 30 V
Description: MOSFET N-CH 60V 300A TO263-7
Packaging: Tape & Reel (TR)
Package / Case: TO-263-7, D2PAK (6 Leads + Tab)
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 300A (Tc)
Rds On (Max) @ Id, Vgs: 1.4mOhm @ 39A, 10V
Power Dissipation (Max): 3.8W (Ta), 250W (Tc)
Vgs(th) (Max) @ Id: 4V @ 250µA
Supplier Device Package: TO-263-7
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 60 V
Gate Charge (Qg) (Max) @ Vgs: 243 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 19250 pF @ 30 V
на замовлення 1600 шт:
термін постачання 21-31 дні (днів)
| Кількість | Ціна без ПДВ |
|---|---|
| 800+ | 130.75 грн |
| 1600+ | 124.74 грн |
| FDB0190N807L |
|
Виробник: onsemi
Description: MOSFET N-CH 80V 270A TO263-7
Packaging: Tape & Reel (TR)
Package / Case: TO-263-7, D2PAK (6 Leads + Tab)
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 270A (Tc)
Rds On (Max) @ Id, Vgs: 1.7mOhm @ 34A, 10V
Power Dissipation (Max): 3.8W (Ta), 250W (Tc)
Vgs(th) (Max) @ Id: 4V @ 250µA
Supplier Device Package: TO-263-7
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 8V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 80 V
Gate Charge (Qg) (Max) @ Vgs: 249 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 19110 pF @ 40 V
Description: MOSFET N-CH 80V 270A TO263-7
Packaging: Tape & Reel (TR)
Package / Case: TO-263-7, D2PAK (6 Leads + Tab)
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 270A (Tc)
Rds On (Max) @ Id, Vgs: 1.7mOhm @ 34A, 10V
Power Dissipation (Max): 3.8W (Ta), 250W (Tc)
Vgs(th) (Max) @ Id: 4V @ 250µA
Supplier Device Package: TO-263-7
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 8V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 80 V
Gate Charge (Qg) (Max) @ Vgs: 249 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 19110 pF @ 40 V
на замовлення 800 шт:
термін постачання 21-31 дні (днів)
| Кількість | Ціна без ПДВ |
|---|---|
| 800+ | 186.11 грн |
| FDB0250N807L |
|
Виробник: onsemi
Description: MOSFET N-CH 80V 240A TO263-7
Drain to Source Voltage (Vdss): 80 V
Vgs (Max): ±20V
Drive Voltage (Max Rds On, Min Rds On): 8V, 10V
Part Status: Active
Supplier Device Package: TO-263-7
Vgs(th) (Max) @ Id: 4V @ 250µA
Power Dissipation (Max): 3.8W (Ta), 214W (Tc)
Rds On (Max) @ Id, Vgs: 2.2mOhm @ 30A, 10V
Current - Continuous Drain (Id) @ 25°C: 240A (Tc)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: TO-263-7, D2PAK (6 Leads + Tab)
Packaging: Tape & Reel (TR)
Input Capacitance (Ciss) (Max) @ Vds: 15400 pF @ 40 V
Gate Charge (Qg) (Max) @ Vgs: 200 nC @ 10 V
Description: MOSFET N-CH 80V 240A TO263-7
Drain to Source Voltage (Vdss): 80 V
Vgs (Max): ±20V
Drive Voltage (Max Rds On, Min Rds On): 8V, 10V
Part Status: Active
Supplier Device Package: TO-263-7
Vgs(th) (Max) @ Id: 4V @ 250µA
Power Dissipation (Max): 3.8W (Ta), 214W (Tc)
Rds On (Max) @ Id, Vgs: 2.2mOhm @ 30A, 10V
Current - Continuous Drain (Id) @ 25°C: 240A (Tc)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: TO-263-7, D2PAK (6 Leads + Tab)
Packaging: Tape & Reel (TR)
Input Capacitance (Ciss) (Max) @ Vds: 15400 pF @ 40 V
Gate Charge (Qg) (Max) @ Vgs: 200 nC @ 10 V
товару немає в наявності
Мінімальне замовлення: 800 шт
В кошику
од. на суму грн.
| FDB0300N1007L |
|
Виробник: onsemi
Description: MOSFET N-CH 100V 200A TO263-7
Packaging: Tape & Reel (TR)
Package / Case: TO-263-7, D2PAK (6 Leads + Tab)
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 200A (Tc)
Rds On (Max) @ Id, Vgs: 3mOhm @ 26A, 10V
Power Dissipation (Max): 3.8W (Ta), 250W (Tc)
Vgs(th) (Max) @ Id: 4V @ 250µA
Supplier Device Package: TO-263-7
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 6V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 100 V
Gate Charge (Qg) (Max) @ Vgs: 113 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 8295 pF @ 50 V
Description: MOSFET N-CH 100V 200A TO263-7
Packaging: Tape & Reel (TR)
Package / Case: TO-263-7, D2PAK (6 Leads + Tab)
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 200A (Tc)
Rds On (Max) @ Id, Vgs: 3mOhm @ 26A, 10V
Power Dissipation (Max): 3.8W (Ta), 250W (Tc)
Vgs(th) (Max) @ Id: 4V @ 250µA
Supplier Device Package: TO-263-7
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 6V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 100 V
Gate Charge (Qg) (Max) @ Vgs: 113 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 8295 pF @ 50 V
товару немає в наявності
Мінімальне замовлення: 800 шт
В кошику
од. на суму грн.
| FDBL86566-F085 |
|
Виробник: onsemi
Description: MOSFET N-CH 60V 240A 8HPSOF
Qualification: AEC-Q101
Grade: Automotive
Input Capacitance (Ciss) (Max) @ Vds: 6655 pF @ 30 V
Gate Charge (Qg) (Max) @ Vgs: 110 nC @ 10 V
Drain to Source Voltage (Vdss): 60 V
Vgs (Max): ±20V
Drive Voltage (Max Rds On, Min Rds On): 10V
Supplier Device Package: 8-HPSOF
Vgs(th) (Max) @ Id: 4V @ 250µA
Power Dissipation (Max): 300W (Tj)
Rds On (Max) @ Id, Vgs: 2.4mOhm @ 80A, 10V
Current - Continuous Drain (Id) @ 25°C: 240A (Tc)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 175°C (TJ)
Mounting Type: Surface Mount
Package / Case: 8-PowerSFN
Packaging: Tape & Reel (TR)
Description: MOSFET N-CH 60V 240A 8HPSOF
Qualification: AEC-Q101
Grade: Automotive
Input Capacitance (Ciss) (Max) @ Vds: 6655 pF @ 30 V
Gate Charge (Qg) (Max) @ Vgs: 110 nC @ 10 V
Drain to Source Voltage (Vdss): 60 V
Vgs (Max): ±20V
Drive Voltage (Max Rds On, Min Rds On): 10V
Supplier Device Package: 8-HPSOF
Vgs(th) (Max) @ Id: 4V @ 250µA
Power Dissipation (Max): 300W (Tj)
Rds On (Max) @ Id, Vgs: 2.4mOhm @ 80A, 10V
Current - Continuous Drain (Id) @ 25°C: 240A (Tc)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 175°C (TJ)
Mounting Type: Surface Mount
Package / Case: 8-PowerSFN
Packaging: Tape & Reel (TR)
на замовлення 18000 шт:
термін постачання 21-31 дні (днів)
| Кількість | Ціна без ПДВ |
|---|---|
| 2000+ | 102.86 грн |
| FDD86380-F085 |
|
Виробник: onsemi
Description: MOSFET N-CH 80V 50A DPAK
Input Capacitance (Ciss) (Max) @ Vds: 1440 pF @ 40 V
Gate Charge (Qg) (Max) @ Vgs: 30 nC @ 10 V
Drain to Source Voltage (Vdss): 80 V
Vgs (Max): ±20V
Drive Voltage (Max Rds On, Min Rds On): 10V
Grade: Automotive
Supplier Device Package: TO-252AA
Qualification: AEC-Q101
Vgs(th) (Max) @ Id: 4V @ 250µA
Power Dissipation (Max): 75W (Tj)
Rds On (Max) @ Id, Vgs: 13.5mOhm @ 50A, 10V
Current - Continuous Drain (Id) @ 25°C: 50A (Tc)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 175°C (TJ)
Mounting Type: Surface Mount
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Packaging: Tape & Reel (TR)
Description: MOSFET N-CH 80V 50A DPAK
Input Capacitance (Ciss) (Max) @ Vds: 1440 pF @ 40 V
Gate Charge (Qg) (Max) @ Vgs: 30 nC @ 10 V
Drain to Source Voltage (Vdss): 80 V
Vgs (Max): ±20V
Drive Voltage (Max Rds On, Min Rds On): 10V
Grade: Automotive
Supplier Device Package: TO-252AA
Qualification: AEC-Q101
Vgs(th) (Max) @ Id: 4V @ 250µA
Power Dissipation (Max): 75W (Tj)
Rds On (Max) @ Id, Vgs: 13.5mOhm @ 50A, 10V
Current - Continuous Drain (Id) @ 25°C: 50A (Tc)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 175°C (TJ)
Mounting Type: Surface Mount
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Packaging: Tape & Reel (TR)
на замовлення 7500 шт:
термін постачання 21-31 дні (днів)
| Кількість | Ціна без ПДВ |
|---|---|
| 2500+ | 32.55 грн |
| 5000+ | 29.14 грн |
| 7500+ | 28.96 грн |
| FPF2595UCX |
|
Виробник: onsemi
Description: IC PWR SWITCH P-CHAN 1:1 12WLCSP
Description: IC PWR SWITCH P-CHAN 1:1 12WLCSP
товару немає в наявності
Мінімальне замовлення: 3000 шт
В кошику
од. на суму грн.
| S1GHE |
|
Виробник: onsemi
Description: DIODE GEN PURP 400V 1A SOD323HE
Qualification: AEC-Q101
Current - Reverse Leakage @ Vr: 1 µA @ 400 V
Voltage - Forward (Vf) (Max) @ If: 1.1 V @ 1 A
Voltage - DC Reverse (Vr) (Max): 400 V
Grade: Automotive
Operating Temperature - Junction: -55°C ~ 175°C
Supplier Device Package: SOD-323HE
Current - Average Rectified (Io): 1A
Capacitance @ Vr, F: 3pF @ 4V, 1MHz
Technology: Standard
Reverse Recovery Time (trr): 782 ns
Speed: Standard Recovery >500ns, > 200mA (Io)
Mounting Type: Surface Mount
Package / Case: 2-SMD, Flat Leads
Packaging: Tape & Reel (TR)
Description: DIODE GEN PURP 400V 1A SOD323HE
Qualification: AEC-Q101
Current - Reverse Leakage @ Vr: 1 µA @ 400 V
Voltage - Forward (Vf) (Max) @ If: 1.1 V @ 1 A
Voltage - DC Reverse (Vr) (Max): 400 V
Grade: Automotive
Operating Temperature - Junction: -55°C ~ 175°C
Supplier Device Package: SOD-323HE
Current - Average Rectified (Io): 1A
Capacitance @ Vr, F: 3pF @ 4V, 1MHz
Technology: Standard
Reverse Recovery Time (trr): 782 ns
Speed: Standard Recovery >500ns, > 200mA (Io)
Mounting Type: Surface Mount
Package / Case: 2-SMD, Flat Leads
Packaging: Tape & Reel (TR)
на замовлення 129000 шт:
термін постачання 21-31 дні (днів)
| Кількість | Ціна без ПДВ |
|---|---|
| 3000+ | 6.98 грн |
| 6000+ | 6.23 грн |
| 9000+ | 6.09 грн |
| 15000+ | 5.62 грн |
| 21000+ | 5.60 грн |
| 30000+ | 5.48 грн |
| 75000+ | 5.19 грн |
| SS13HE |
|
Виробник: onsemi
Description: DIODE SCHOTTKY 30V 1A SOD323HE
Packaging: Tape & Reel (TR)
Package / Case: 2-SMD, Flat Leads
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 5.6 ns
Technology: Schottky
Capacitance @ Vr, F: 55pF @ 4V, 1MHz
Current - Average Rectified (Io): 1A
Supplier Device Package: SOD-323HE
Operating Temperature - Junction: -55°C ~ 150°C
Part Status: Active
Voltage - DC Reverse (Vr) (Max): 30 V
Voltage - Forward (Vf) (Max) @ If: 550 mV @ 1 A
Current - Reverse Leakage @ Vr: 50 µA @ 30 V
Description: DIODE SCHOTTKY 30V 1A SOD323HE
Packaging: Tape & Reel (TR)
Package / Case: 2-SMD, Flat Leads
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 5.6 ns
Technology: Schottky
Capacitance @ Vr, F: 55pF @ 4V, 1MHz
Current - Average Rectified (Io): 1A
Supplier Device Package: SOD-323HE
Operating Temperature - Junction: -55°C ~ 150°C
Part Status: Active
Voltage - DC Reverse (Vr) (Max): 30 V
Voltage - Forward (Vf) (Max) @ If: 550 mV @ 1 A
Current - Reverse Leakage @ Vr: 50 µA @ 30 V
на замовлення 60000 шт:
термін постачання 21-31 дні (днів)
| Кількість | Ціна без ПДВ |
|---|---|
| 3000+ | 8.03 грн |
| 6000+ | 7.04 грн |
| SS14HE |
|
Виробник: onsemi
Description: DIODE SCHOTTKY 40V 1A SOD323HE
Packaging: Tape & Reel (TR)
Package / Case: 2-SMD, Flat Leads
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 5.6 ns
Technology: Schottky
Capacitance @ Vr, F: 55pF @ 4V, 1MHz
Current - Average Rectified (Io): 1A
Supplier Device Package: SOD-323HE
Operating Temperature - Junction: -55°C ~ 150°C
Voltage - DC Reverse (Vr) (Max): 40 V
Voltage - Forward (Vf) (Max) @ If: 550 mV @ 1 A
Current - Reverse Leakage @ Vr: 50 µA @ 40 V
Description: DIODE SCHOTTKY 40V 1A SOD323HE
Packaging: Tape & Reel (TR)
Package / Case: 2-SMD, Flat Leads
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 5.6 ns
Technology: Schottky
Capacitance @ Vr, F: 55pF @ 4V, 1MHz
Current - Average Rectified (Io): 1A
Supplier Device Package: SOD-323HE
Operating Temperature - Junction: -55°C ~ 150°C
Voltage - DC Reverse (Vr) (Max): 40 V
Voltage - Forward (Vf) (Max) @ If: 550 mV @ 1 A
Current - Reverse Leakage @ Vr: 50 µA @ 40 V
на замовлення 228000 шт:
термін постачання 21-31 дні (днів)
| Кількість | Ціна без ПДВ |
|---|---|
| 3000+ | 8.28 грн |
| 6000+ | 7.26 грн |
| SS16HE |
|
Виробник: onsemi
Description: DIODE SCHOTTKY 60V 1A SOD323HE
Packaging: Tape & Reel (TR)
Package / Case: 2-SMD, Flat Leads
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 8.3 ns
Technology: Schottky
Capacitance @ Vr, F: 43pF @ 4V, 1MHz
Current - Average Rectified (Io): 1A
Supplier Device Package: SOD-323HE
Operating Temperature - Junction: -55°C ~ 150°C
Part Status: Not For New Designs
Voltage - DC Reverse (Vr) (Max): 60 V
Voltage - Forward (Vf) (Max) @ If: 680 mV @ 1 A
Current - Reverse Leakage @ Vr: 50 µA @ 60 V
Grade: Automotive
Qualification: AEC-Q101
Description: DIODE SCHOTTKY 60V 1A SOD323HE
Packaging: Tape & Reel (TR)
Package / Case: 2-SMD, Flat Leads
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 8.3 ns
Technology: Schottky
Capacitance @ Vr, F: 43pF @ 4V, 1MHz
Current - Average Rectified (Io): 1A
Supplier Device Package: SOD-323HE
Operating Temperature - Junction: -55°C ~ 150°C
Part Status: Not For New Designs
Voltage - DC Reverse (Vr) (Max): 60 V
Voltage - Forward (Vf) (Max) @ If: 680 mV @ 1 A
Current - Reverse Leakage @ Vr: 50 µA @ 60 V
Grade: Automotive
Qualification: AEC-Q101
на замовлення 358000 шт:
термін постачання 21-31 дні (днів)
| Кількість | Ціна без ПДВ |
|---|---|
| 3000+ | 8.28 грн |
| 6000+ | 7.26 грн |
| FAN49103AUC340X |
|
Виробник: onsemi
Description: IC REG BCK BST PROG/3.4V 20WLCSP
Voltage - Output (Min/Fixed): 2.8V, 3.4V
Voltage - Input (Min): 2.5V
Voltage - Output (Max): 4V
Synchronous Rectifier: Yes
Supplier Device Package: 20-WLCSP (1.96x1.56)
Topology: Buck-Boost
Voltage - Input (Max): 5.5V
Frequency - Switching: 1.8MHz
Output Configuration: Positive
Operating Temperature: -40°C ~ 85°C (TA)
Current - Output: 2.5A
Function: Step-Up/Step-Down
Number of Outputs: 1
Mounting Type: Surface Mount
Output Type: Programmable (Fixed)
Package / Case: 20-UFBGA, WLCSP
Packaging: Cut Tape (CT)
Description: IC REG BCK BST PROG/3.4V 20WLCSP
Voltage - Output (Min/Fixed): 2.8V, 3.4V
Voltage - Input (Min): 2.5V
Voltage - Output (Max): 4V
Synchronous Rectifier: Yes
Supplier Device Package: 20-WLCSP (1.96x1.56)
Topology: Buck-Boost
Voltage - Input (Max): 5.5V
Frequency - Switching: 1.8MHz
Output Configuration: Positive
Operating Temperature: -40°C ~ 85°C (TA)
Current - Output: 2.5A
Function: Step-Up/Step-Down
Number of Outputs: 1
Mounting Type: Surface Mount
Output Type: Programmable (Fixed)
Package / Case: 20-UFBGA, WLCSP
Packaging: Cut Tape (CT)
на замовлення 5295 шт:
термін постачання 21-31 дні (днів)
| Кількість | Ціна без ПДВ |
|---|---|
| 5+ | 74.39 грн |
| 10+ | 51.56 грн |
| 25+ | 46.59 грн |
| 100+ | 38.59 грн |
| 250+ | 36.14 грн |
| 500+ | 34.67 грн |
| 1000+ | 32.91 грн |
| FDB0170N607L |
|
Виробник: onsemi
Description: MOSFET N-CH 60V 300A TO263-7
Packaging: Cut Tape (CT)
Package / Case: TO-263-7, D2PAK (6 Leads + Tab)
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 300A (Tc)
Rds On (Max) @ Id, Vgs: 1.4mOhm @ 39A, 10V
Power Dissipation (Max): 3.8W (Ta), 250W (Tc)
Vgs(th) (Max) @ Id: 4V @ 250µA
Supplier Device Package: TO-263-7
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 60 V
Gate Charge (Qg) (Max) @ Vgs: 243 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 19250 pF @ 30 V
Description: MOSFET N-CH 60V 300A TO263-7
Packaging: Cut Tape (CT)
Package / Case: TO-263-7, D2PAK (6 Leads + Tab)
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 300A (Tc)
Rds On (Max) @ Id, Vgs: 1.4mOhm @ 39A, 10V
Power Dissipation (Max): 3.8W (Ta), 250W (Tc)
Vgs(th) (Max) @ Id: 4V @ 250µA
Supplier Device Package: TO-263-7
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 60 V
Gate Charge (Qg) (Max) @ Vgs: 243 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 19250 pF @ 30 V
на замовлення 1661 шт:
термін постачання 21-31 дні (днів)
| Кількість | Ціна без ПДВ |
|---|---|
| 1+ | 346.38 грн |
| 10+ | 222.30 грн |
| 100+ | 158.95 грн |
| FDB0190N807L |
|
Виробник: onsemi
Description: MOSFET N-CH 80V 270A TO263-7
Packaging: Cut Tape (CT)
Package / Case: TO-263-7, D2PAK (6 Leads + Tab)
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 270A (Tc)
Rds On (Max) @ Id, Vgs: 1.7mOhm @ 34A, 10V
Power Dissipation (Max): 3.8W (Ta), 250W (Tc)
Vgs(th) (Max) @ Id: 4V @ 250µA
Supplier Device Package: TO-263-7
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 8V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 80 V
Gate Charge (Qg) (Max) @ Vgs: 249 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 19110 pF @ 40 V
Description: MOSFET N-CH 80V 270A TO263-7
Packaging: Cut Tape (CT)
Package / Case: TO-263-7, D2PAK (6 Leads + Tab)
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 270A (Tc)
Rds On (Max) @ Id, Vgs: 1.7mOhm @ 34A, 10V
Power Dissipation (Max): 3.8W (Ta), 250W (Tc)
Vgs(th) (Max) @ Id: 4V @ 250µA
Supplier Device Package: TO-263-7
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 8V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 80 V
Gate Charge (Qg) (Max) @ Vgs: 249 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 19110 pF @ 40 V
на замовлення 800 шт:
термін постачання 21-31 дні (днів)
| Кількість | Ціна без ПДВ |
|---|---|
| 1+ | 488.97 грн |
| 10+ | 317.51 грн |
| 100+ | 230.70 грн |
| FDB0250N807L |
|
Виробник: onsemi
Description: MOSFET N-CH 80V 240A TO263-7
Packaging: Cut Tape (CT)
Package / Case: TO-263-7, D2PAK (6 Leads + Tab)
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 240A (Tc)
Rds On (Max) @ Id, Vgs: 2.2mOhm @ 30A, 10V
Power Dissipation (Max): 3.8W (Ta), 214W (Tc)
Vgs(th) (Max) @ Id: 4V @ 250µA
Supplier Device Package: TO-263-7
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 8V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 80 V
Gate Charge (Qg) (Max) @ Vgs: 200 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 15400 pF @ 40 V
Description: MOSFET N-CH 80V 240A TO263-7
Packaging: Cut Tape (CT)
Package / Case: TO-263-7, D2PAK (6 Leads + Tab)
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 240A (Tc)
Rds On (Max) @ Id, Vgs: 2.2mOhm @ 30A, 10V
Power Dissipation (Max): 3.8W (Ta), 214W (Tc)
Vgs(th) (Max) @ Id: 4V @ 250µA
Supplier Device Package: TO-263-7
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 8V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 80 V
Gate Charge (Qg) (Max) @ Vgs: 200 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 15400 pF @ 40 V
на замовлення 290 шт:
термін постачання 21-31 дні (днів)
| Кількість | Ціна без ПДВ |
|---|---|
| 1+ | 425.42 грн |
| 10+ | 275.35 грн |
| 100+ | 199.30 грн |
| FDB0300N1007L |
|
Виробник: onsemi
Description: MOSFET N-CH 100V 200A TO263-7
Packaging: Cut Tape (CT)
Package / Case: TO-263-7, D2PAK (6 Leads + Tab)
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 200A (Tc)
Rds On (Max) @ Id, Vgs: 3mOhm @ 26A, 10V
Power Dissipation (Max): 3.8W (Ta), 250W (Tc)
Vgs(th) (Max) @ Id: 4V @ 250µA
Supplier Device Package: TO-263-7
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 6V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 100 V
Gate Charge (Qg) (Max) @ Vgs: 113 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 8295 pF @ 50 V
Description: MOSFET N-CH 100V 200A TO263-7
Packaging: Cut Tape (CT)
Package / Case: TO-263-7, D2PAK (6 Leads + Tab)
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 200A (Tc)
Rds On (Max) @ Id, Vgs: 3mOhm @ 26A, 10V
Power Dissipation (Max): 3.8W (Ta), 250W (Tc)
Vgs(th) (Max) @ Id: 4V @ 250µA
Supplier Device Package: TO-263-7
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 6V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 100 V
Gate Charge (Qg) (Max) @ Vgs: 113 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 8295 pF @ 50 V
на замовлення 44 шт:
термін постачання 21-31 дні (днів)
| Кількість | Ціна без ПДВ |
|---|---|
| 1+ | 447.12 грн |
| 10+ | 290.80 грн |
| FDBL86566-F085 |
|
Виробник: onsemi
Description: MOSFET N-CH 60V 240A 8HPSOF
Packaging: Cut Tape (CT)
Package / Case: 8-PowerSFN
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 240A (Tc)
Rds On (Max) @ Id, Vgs: 2.4mOhm @ 80A, 10V
Power Dissipation (Max): 300W (Tj)
Vgs(th) (Max) @ Id: 4V @ 250µA
Supplier Device Package: 8-HPSOF
Grade: Automotive
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 60 V
Gate Charge (Qg) (Max) @ Vgs: 110 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 6655 pF @ 30 V
Qualification: AEC-Q101
Description: MOSFET N-CH 60V 240A 8HPSOF
Packaging: Cut Tape (CT)
Package / Case: 8-PowerSFN
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 240A (Tc)
Rds On (Max) @ Id, Vgs: 2.4mOhm @ 80A, 10V
Power Dissipation (Max): 300W (Tj)
Vgs(th) (Max) @ Id: 4V @ 250µA
Supplier Device Package: 8-HPSOF
Grade: Automotive
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 60 V
Gate Charge (Qg) (Max) @ Vgs: 110 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 6655 pF @ 30 V
Qualification: AEC-Q101
на замовлення 19933 шт:
термін постачання 21-31 дні (днів)
| Кількість | Ціна без ПДВ |
|---|---|
| 2+ | 240.22 грн |
| 10+ | 159.99 грн |
| 100+ | 117.02 грн |
| 500+ | 92.95 грн |
| FPF2595UCX |
|
Виробник: onsemi
Description: IC PWR SWITCH P-CHAN 1:1 12WLCSP
Description: IC PWR SWITCH P-CHAN 1:1 12WLCSP
на замовлення 1 шт:
термін постачання 21-31 дні (днів)
| S1GHE |
|
Виробник: onsemi
Description: DIODE GEN PURP 400V 1A SOD323HE
Packaging: Cut Tape (CT)
Package / Case: 2-SMD, Flat Leads
Mounting Type: Surface Mount
Speed: Standard Recovery >500ns, > 200mA (Io)
Reverse Recovery Time (trr): 782 ns
Technology: Standard
Capacitance @ Vr, F: 3pF @ 4V, 1MHz
Current - Average Rectified (Io): 1A
Supplier Device Package: SOD-323HE
Operating Temperature - Junction: -55°C ~ 175°C
Grade: Automotive
Voltage - DC Reverse (Vr) (Max): 400 V
Voltage - Forward (Vf) (Max) @ If: 1.1 V @ 1 A
Current - Reverse Leakage @ Vr: 1 µA @ 400 V
Qualification: AEC-Q101
Description: DIODE GEN PURP 400V 1A SOD323HE
Packaging: Cut Tape (CT)
Package / Case: 2-SMD, Flat Leads
Mounting Type: Surface Mount
Speed: Standard Recovery >500ns, > 200mA (Io)
Reverse Recovery Time (trr): 782 ns
Technology: Standard
Capacitance @ Vr, F: 3pF @ 4V, 1MHz
Current - Average Rectified (Io): 1A
Supplier Device Package: SOD-323HE
Operating Temperature - Junction: -55°C ~ 175°C
Grade: Automotive
Voltage - DC Reverse (Vr) (Max): 400 V
Voltage - Forward (Vf) (Max) @ If: 1.1 V @ 1 A
Current - Reverse Leakage @ Vr: 1 µA @ 400 V
Qualification: AEC-Q101
на замовлення 131479 шт:
термін постачання 21-31 дні (днів)
| Кількість | Ціна без ПДВ |
|---|---|
| 12+ | 27.12 грн |
| 17+ | 17.61 грн |
| 100+ | 13.52 грн |
| 500+ | 9.49 грн |
| 1000+ | 8.53 грн |
| SS13HE |
|
Виробник: onsemi
Description: DIODE SCHOTTKY 30V 1A SOD323HE
Packaging: Cut Tape (CT)
Package / Case: 2-SMD, Flat Leads
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 5.6 ns
Technology: Schottky
Capacitance @ Vr, F: 55pF @ 4V, 1MHz
Current - Average Rectified (Io): 1A
Supplier Device Package: SOD-323HE
Operating Temperature - Junction: -55°C ~ 150°C
Part Status: Active
Voltage - DC Reverse (Vr) (Max): 30 V
Voltage - Forward (Vf) (Max) @ If: 550 mV @ 1 A
Current - Reverse Leakage @ Vr: 50 µA @ 30 V
Description: DIODE SCHOTTKY 30V 1A SOD323HE
Packaging: Cut Tape (CT)
Package / Case: 2-SMD, Flat Leads
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 5.6 ns
Technology: Schottky
Capacitance @ Vr, F: 55pF @ 4V, 1MHz
Current - Average Rectified (Io): 1A
Supplier Device Package: SOD-323HE
Operating Temperature - Junction: -55°C ~ 150°C
Part Status: Active
Voltage - DC Reverse (Vr) (Max): 30 V
Voltage - Forward (Vf) (Max) @ If: 550 mV @ 1 A
Current - Reverse Leakage @ Vr: 50 µA @ 30 V
на замовлення 60454 шт:
термін постачання 21-31 дні (днів)
| Кількість | Ціна без ПДВ |
|---|---|
| 8+ | 38.75 грн |
| 13+ | 22.98 грн |
| 100+ | 14.63 грн |
| 500+ | 10.33 грн |
| 1000+ | 9.23 грн |
| SS14HE |
|
Виробник: onsemi
Description: DIODE SCHOTTKY 40V 1A SOD323HE
Packaging: Cut Tape (CT)
Package / Case: 2-SMD, Flat Leads
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 5.6 ns
Technology: Schottky
Capacitance @ Vr, F: 55pF @ 4V, 1MHz
Current - Average Rectified (Io): 1A
Supplier Device Package: SOD-323HE
Operating Temperature - Junction: -55°C ~ 150°C
Voltage - DC Reverse (Vr) (Max): 40 V
Voltage - Forward (Vf) (Max) @ If: 550 mV @ 1 A
Current - Reverse Leakage @ Vr: 50 µA @ 40 V
Description: DIODE SCHOTTKY 40V 1A SOD323HE
Packaging: Cut Tape (CT)
Package / Case: 2-SMD, Flat Leads
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 5.6 ns
Technology: Schottky
Capacitance @ Vr, F: 55pF @ 4V, 1MHz
Current - Average Rectified (Io): 1A
Supplier Device Package: SOD-323HE
Operating Temperature - Junction: -55°C ~ 150°C
Voltage - DC Reverse (Vr) (Max): 40 V
Voltage - Forward (Vf) (Max) @ If: 550 mV @ 1 A
Current - Reverse Leakage @ Vr: 50 µA @ 40 V
на замовлення 228858 шт:
термін постачання 21-31 дні (днів)
| Кількість | Ціна без ПДВ |
|---|---|
| 8+ | 40.30 грн |
| 13+ | 23.65 грн |
| 100+ | 15.08 грн |
| 500+ | 10.65 грн |
| 1000+ | 9.52 грн |
| SS16HE |
|
Виробник: onsemi
Description: DIODE SCHOTTKY 60V 1A SOD323HE
Packaging: Cut Tape (CT)
Package / Case: 2-SMD, Flat Leads
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 8.3 ns
Technology: Schottky
Capacitance @ Vr, F: 43pF @ 4V, 1MHz
Current - Average Rectified (Io): 1A
Supplier Device Package: SOD-323HE
Operating Temperature - Junction: -55°C ~ 150°C
Grade: Automotive
Part Status: Not For New Designs
Voltage - DC Reverse (Vr) (Max): 60 V
Voltage - Forward (Vf) (Max) @ If: 680 mV @ 1 A
Current - Reverse Leakage @ Vr: 50 µA @ 60 V
Qualification: AEC-Q101
Description: DIODE SCHOTTKY 60V 1A SOD323HE
Packaging: Cut Tape (CT)
Package / Case: 2-SMD, Flat Leads
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 8.3 ns
Technology: Schottky
Capacitance @ Vr, F: 43pF @ 4V, 1MHz
Current - Average Rectified (Io): 1A
Supplier Device Package: SOD-323HE
Operating Temperature - Junction: -55°C ~ 150°C
Grade: Automotive
Part Status: Not For New Designs
Voltage - DC Reverse (Vr) (Max): 60 V
Voltage - Forward (Vf) (Max) @ If: 680 mV @ 1 A
Current - Reverse Leakage @ Vr: 50 µA @ 60 V
Qualification: AEC-Q101
на замовлення 359359 шт:
термін постачання 21-31 дні (днів)
| Кількість | Ціна без ПДВ |
|---|---|
| 8+ | 40.30 грн |
| 13+ | 23.65 грн |
| 100+ | 15.08 грн |
| 500+ | 10.65 грн |
| 1000+ | 9.52 грн |
| NCP1399AADR2G |
|
Виробник: onsemi
Description: IC OFFLINE SW HALF-BRDG 16SOIC
Packaging: Tape & Reel (TR)
Package / Case: 16-SOIC (0.154", 3.90mm Width), 14 Leads
Mounting Type: Surface Mount
Operating Temperature: -40°C ~ 125°C (TJ)
Duty Cycle: 50%
Frequency - Switching: 20kHz ~ 750kHz
Internal Switch(s): No
Output Isolation: Isolated
Topology: Half-Bridge
Voltage - Supply (Vcc/Vdd): 9.5V ~ 20V
Supplier Device Package: 16-SOIC
Fault Protection: Current Limiting, Open Loop, Over Load, Over Temperature, Over Voltage, Short Circuit
Voltage - Start Up: 15.8 V
Description: IC OFFLINE SW HALF-BRDG 16SOIC
Packaging: Tape & Reel (TR)
Package / Case: 16-SOIC (0.154", 3.90mm Width), 14 Leads
Mounting Type: Surface Mount
Operating Temperature: -40°C ~ 125°C (TJ)
Duty Cycle: 50%
Frequency - Switching: 20kHz ~ 750kHz
Internal Switch(s): No
Output Isolation: Isolated
Topology: Half-Bridge
Voltage - Supply (Vcc/Vdd): 9.5V ~ 20V
Supplier Device Package: 16-SOIC
Fault Protection: Current Limiting, Open Loop, Over Load, Over Temperature, Over Voltage, Short Circuit
Voltage - Start Up: 15.8 V
товару немає в наявності
Мінімальне замовлення: 2500 шт
В кошику
од. на суму грн.
| 1N5339WS |
Виробник: onsemi
Description: DIODE ZENER 5.6V 5W AXIAL
Tolerance: ±5%
Packaging: Bulk
Operating Temperature: -65°C ~ 200°C
Voltage - Zener (Nom) (Vz): 5.6 V
Impedance (Max) (Zzt): 1 Ohms
Part Status: Obsolete
Power - Max: 5 W
Voltage - Forward (Vf) (Max) @ If: 1.2 V @ 1 A
Current Coupled to Voltage - Forward (Vf) (Max) @ If: 1
Voltage Coupled to Current - Reverse Leakage @ Vr: 2
Current - Reverse Leakage @ Vr: 1 µA @ 2 V
Description: DIODE ZENER 5.6V 5W AXIAL
Tolerance: ±5%
Packaging: Bulk
Operating Temperature: -65°C ~ 200°C
Voltage - Zener (Nom) (Vz): 5.6 V
Impedance (Max) (Zzt): 1 Ohms
Part Status: Obsolete
Power - Max: 5 W
Voltage - Forward (Vf) (Max) @ If: 1.2 V @ 1 A
Current Coupled to Voltage - Forward (Vf) (Max) @ If: 1
Voltage Coupled to Current - Reverse Leakage @ Vr: 2
Current - Reverse Leakage @ Vr: 1 µA @ 2 V
товару немає в наявності
В кошику
од. на суму грн.
| 2SK4098FS |
|
Виробник: onsemi
Description: MOSFET N-CH 600V 6A TO220F-3FS
Packaging: Bulk
Package / Case: TO-220-3 Full Pack
Mounting Type: Through Hole
Operating Temperature: 150°C
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 6A (Tc)
Rds On (Max) @ Id, Vgs: 1.1Ohm @ 3.5A, 10V
Power Dissipation (Max): 2W
Supplier Device Package: TO-220F-3FS
Part Status: Obsolete
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±30V
Drain to Source Voltage (Vdss): 600 V
Gate Charge (Qg) (Max) @ Vgs: 23.5 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 600 pF @ 30 V
Description: MOSFET N-CH 600V 6A TO220F-3FS
Packaging: Bulk
Package / Case: TO-220-3 Full Pack
Mounting Type: Through Hole
Operating Temperature: 150°C
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 6A (Tc)
Rds On (Max) @ Id, Vgs: 1.1Ohm @ 3.5A, 10V
Power Dissipation (Max): 2W
Supplier Device Package: TO-220F-3FS
Part Status: Obsolete
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±30V
Drain to Source Voltage (Vdss): 600 V
Gate Charge (Qg) (Max) @ Vgs: 23.5 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 600 pF @ 30 V
товару немає в наявності
В кошику
од. на суму грн.
| 2SK4125-1EX |
Виробник: onsemi
Description: MOSFET N-CH 600V 17A TO3P-3L
Packaging: Bulk
Package / Case: TO-3P-3, SC-65-3
Mounting Type: Through Hole
Operating Temperature: 150°C (TA)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 17A (Ta)
Rds On (Max) @ Id, Vgs: 610mOhm @ 7A, 10V
Power Dissipation (Max): 2.5W (Ta), 170W (Tc)
Supplier Device Package: TO-3P-3L
Part Status: Obsolete
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±30V
Drain to Source Voltage (Vdss): 600 V
Gate Charge (Qg) (Max) @ Vgs: 46 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 1200 pF @ 30 V
Description: MOSFET N-CH 600V 17A TO3P-3L
Packaging: Bulk
Package / Case: TO-3P-3, SC-65-3
Mounting Type: Through Hole
Operating Temperature: 150°C (TA)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 17A (Ta)
Rds On (Max) @ Id, Vgs: 610mOhm @ 7A, 10V
Power Dissipation (Max): 2.5W (Ta), 170W (Tc)
Supplier Device Package: TO-3P-3L
Part Status: Obsolete
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±30V
Drain to Source Voltage (Vdss): 600 V
Gate Charge (Qg) (Max) @ Vgs: 46 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 1200 pF @ 30 V
товару немає в наявності
В кошику
од. на суму грн.
| NRVTSA4100ET3G |
|
Виробник: onsemi
Description: DIODE SCHOTTKY 100V 4A SMA
Packaging: Tape & Reel (TR)
Package / Case: DO-214AC, SMA
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Technology: Schottky
Capacitance @ Vr, F: 55pF @ 4V, 1MHz
Current - Average Rectified (Io): 4A
Supplier Device Package: SMA
Operating Temperature - Junction: -55°C ~ 175°C
Grade: Automotive
Part Status: Active
Voltage - DC Reverse (Vr) (Max): 100 V
Voltage - Forward (Vf) (Max) @ If: 680 mV @ 4 A
Current - Reverse Leakage @ Vr: 9 µA @ 100 V
Qualification: AEC-Q101
Description: DIODE SCHOTTKY 100V 4A SMA
Packaging: Tape & Reel (TR)
Package / Case: DO-214AC, SMA
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Technology: Schottky
Capacitance @ Vr, F: 55pF @ 4V, 1MHz
Current - Average Rectified (Io): 4A
Supplier Device Package: SMA
Operating Temperature - Junction: -55°C ~ 175°C
Grade: Automotive
Part Status: Active
Voltage - DC Reverse (Vr) (Max): 100 V
Voltage - Forward (Vf) (Max) @ If: 680 mV @ 4 A
Current - Reverse Leakage @ Vr: 9 µA @ 100 V
Qualification: AEC-Q101
товару немає в наявності
Мінімальне замовлення: 5000 шт
В кошику
од. на суму грн.
| FGY160T65SPD-F085 |
|
Виробник: onsemi
Description: IGBT TRENCH FS 650V 240A TO-247
Packaging: Tube
Package / Case: TO-247-3
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 175°C (TJ)
Input Type: Standard
Reverse Recovery Time (trr): 132 ns
Vce(on) (Max) @ Vge, Ic: 2.05V @ 15V, 160A
Supplier Device Package: TO-247-3
IGBT Type: Trench Field Stop
Td (on/off) @ 25°C: 53ns/98ns
Switching Energy: 12.4mJ (on), 5.7mJ (off)
Test Condition: 400V, 160A, 15V
Grade: Automotive
Part Status: Active
Current - Collector (Ic) (Max): 240 A
Voltage - Collector Emitter Breakdown (Max): 650 V
Current - Collector Pulsed (Icm): 480 A
Power - Max: 882 W
Qualification: AEC-Q101
Description: IGBT TRENCH FS 650V 240A TO-247
Packaging: Tube
Package / Case: TO-247-3
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 175°C (TJ)
Input Type: Standard
Reverse Recovery Time (trr): 132 ns
Vce(on) (Max) @ Vge, Ic: 2.05V @ 15V, 160A
Supplier Device Package: TO-247-3
IGBT Type: Trench Field Stop
Td (on/off) @ 25°C: 53ns/98ns
Switching Energy: 12.4mJ (on), 5.7mJ (off)
Test Condition: 400V, 160A, 15V
Grade: Automotive
Part Status: Active
Current - Collector (Ic) (Max): 240 A
Voltage - Collector Emitter Breakdown (Max): 650 V
Current - Collector Pulsed (Icm): 480 A
Power - Max: 882 W
Qualification: AEC-Q101
на замовлення 213 шт:
термін постачання 21-31 дні (днів)
| Кількість | Ціна без ПДВ |
|---|---|
| 1+ | 1054.65 грн |
| 30+ | 625.62 грн |
| 120+ | 540.15 грн |
| FNB81060T3 |
|
Виробник: onsemi
Description: MODULE SPM 600V 10A 25PWRDIP
Packaging: Tube
Package / Case: 25-PowerDIP Module (0.815", 20.70mm)
Mounting Type: Through Hole
Type: IGBT
Configuration: 3 Phase
Voltage - Isolation: 1500Vrms
Current: 10 A
Voltage: 600 V
Description: MODULE SPM 600V 10A 25PWRDIP
Packaging: Tube
Package / Case: 25-PowerDIP Module (0.815", 20.70mm)
Mounting Type: Through Hole
Type: IGBT
Configuration: 3 Phase
Voltage - Isolation: 1500Vrms
Current: 10 A
Voltage: 600 V
товару немає в наявності
В кошику
од. на суму грн.
| FODM1007 |
|
Виробник: onsemi
Description: OPTOISO 5KV 1CH TRANS LSOP4
Packaging: Tube
Package / Case: 4-SMD, Gull Wing
Output Type: Transistor
Mounting Type: Surface Mount
Operating Temperature: -40°C ~ 110°C
Voltage - Forward (Vf) (Typ): 1.4V
Input Type: DC
Current - Output / Channel: 50mA
Voltage - Isolation: 5000Vrms
Current Transfer Ratio (Min): 80% @ 5mA
Vce Saturation (Max): 300mV
Current Transfer Ratio (Max): 160% @ 5mA
Supplier Device Package: 4-SOP
Voltage - Output (Max): 70V
Rise / Fall Time (Typ): 5.7µs, 8.5µs
Part Status: Active
Number of Channels: 1
Current - DC Forward (If) (Max): 50 mA
Description: OPTOISO 5KV 1CH TRANS LSOP4
Packaging: Tube
Package / Case: 4-SMD, Gull Wing
Output Type: Transistor
Mounting Type: Surface Mount
Operating Temperature: -40°C ~ 110°C
Voltage - Forward (Vf) (Typ): 1.4V
Input Type: DC
Current - Output / Channel: 50mA
Voltage - Isolation: 5000Vrms
Current Transfer Ratio (Min): 80% @ 5mA
Vce Saturation (Max): 300mV
Current Transfer Ratio (Max): 160% @ 5mA
Supplier Device Package: 4-SOP
Voltage - Output (Max): 70V
Rise / Fall Time (Typ): 5.7µs, 8.5µs
Part Status: Active
Number of Channels: 1
Current - DC Forward (If) (Max): 50 mA
на замовлення 67342 шт:
термін постачання 21-31 дні (днів)
| Кількість | Ціна без ПДВ |
|---|---|
| 8+ | 44.17 грн |
| 11+ | 29.40 грн |
| 100+ | 21.28 грн |
| 500+ | 16.53 грн |
| 1000+ | 15.40 грн |
| 2000+ | 14.44 грн |
| 5000+ | 13.16 грн |
| 10000+ | 12.52 грн |
| 25000+ | 11.81 грн |
| FODM1009 |
|
Виробник: onsemi
Description: OPTOISO 5KV 1CH TRANS LSOP4
Packaging: Tube
Package / Case: 4-SMD, Gull Wing
Output Type: Transistor
Mounting Type: Surface Mount
Operating Temperature: -40°C ~ 110°C
Voltage - Forward (Vf) (Typ): 1.4V
Input Type: DC
Current - Output / Channel: 50mA
Voltage - Isolation: 5000Vrms
Current Transfer Ratio (Min): 200% @ 5mA
Vce Saturation (Max): 300mV
Current Transfer Ratio (Max): 400% @ 5mA
Supplier Device Package: 4-SOP
Voltage - Output (Max): 70V
Rise / Fall Time (Typ): 5.7µs, 8.5µs
Part Status: Active
Number of Channels: 1
Current - DC Forward (If) (Max): 50 mA
Description: OPTOISO 5KV 1CH TRANS LSOP4
Packaging: Tube
Package / Case: 4-SMD, Gull Wing
Output Type: Transistor
Mounting Type: Surface Mount
Operating Temperature: -40°C ~ 110°C
Voltage - Forward (Vf) (Typ): 1.4V
Input Type: DC
Current - Output / Channel: 50mA
Voltage - Isolation: 5000Vrms
Current Transfer Ratio (Min): 200% @ 5mA
Vce Saturation (Max): 300mV
Current Transfer Ratio (Max): 400% @ 5mA
Supplier Device Package: 4-SOP
Voltage - Output (Max): 70V
Rise / Fall Time (Typ): 5.7µs, 8.5µs
Part Status: Active
Number of Channels: 1
Current - DC Forward (If) (Max): 50 mA
на замовлення 85 шт:
термін постачання 21-31 дні (днів)
| Кількість | Ціна без ПДВ |
|---|---|
| 8+ | 42.62 грн |
| 11+ | 28.28 грн |
| FAN54511AUCX |
|
Виробник: onsemi
Description: IC BATT CHG LI-ION 1CELL 63WLCSP
Packaging: Tape & Reel (TR)
Package / Case: 63-UFBGA, WLCSP
Number of Cells: 1
Mounting Type: Surface Mount
Interface: I2C, USB
Battery Chemistry: Lithium Ion/Polymer
Supplier Device Package: 63-WLCSP
Charge Current - Max: 3.2A
Programmable Features: Timer
Fault Protection: Over Temperature
Voltage - Supply (Max): 13.2V
Current - Charging: Constant - Programmable
Part Status: Obsolete
Description: IC BATT CHG LI-ION 1CELL 63WLCSP
Packaging: Tape & Reel (TR)
Package / Case: 63-UFBGA, WLCSP
Number of Cells: 1
Mounting Type: Surface Mount
Interface: I2C, USB
Battery Chemistry: Lithium Ion/Polymer
Supplier Device Package: 63-WLCSP
Charge Current - Max: 3.2A
Programmable Features: Timer
Fault Protection: Over Temperature
Voltage - Supply (Max): 13.2V
Current - Charging: Constant - Programmable
Part Status: Obsolete
товару немає в наявності
В кошику
од. на суму грн.
| FODM1007R2 |
|
Виробник: onsemi
Description: OPTOISO 5KV 1CH TRANS LSOP4
Packaging: Tape & Reel (TR)
Package / Case: 4-SMD, Gull Wing
Output Type: Transistor
Mounting Type: Surface Mount
Operating Temperature: -40°C ~ 110°C
Voltage - Forward (Vf) (Typ): 1.4V
Input Type: DC
Current - Output / Channel: 50mA
Voltage - Isolation: 5000Vrms
Current Transfer Ratio (Min): 80% @ 5mA
Vce Saturation (Max): 300mV
Current Transfer Ratio (Max): 160% @ 5mA
Supplier Device Package: 4-SOP
Voltage - Output (Max): 70V
Rise / Fall Time (Typ): 5.7µs, 8.5µs
Part Status: Active
Number of Channels: 1
Current - DC Forward (If) (Max): 50 mA
Description: OPTOISO 5KV 1CH TRANS LSOP4
Packaging: Tape & Reel (TR)
Package / Case: 4-SMD, Gull Wing
Output Type: Transistor
Mounting Type: Surface Mount
Operating Temperature: -40°C ~ 110°C
Voltage - Forward (Vf) (Typ): 1.4V
Input Type: DC
Current - Output / Channel: 50mA
Voltage - Isolation: 5000Vrms
Current Transfer Ratio (Min): 80% @ 5mA
Vce Saturation (Max): 300mV
Current Transfer Ratio (Max): 160% @ 5mA
Supplier Device Package: 4-SOP
Voltage - Output (Max): 70V
Rise / Fall Time (Typ): 5.7µs, 8.5µs
Part Status: Active
Number of Channels: 1
Current - DC Forward (If) (Max): 50 mA
товару немає в наявності
Мінімальне замовлення: 3000 шт
В кошику
од. на суму грн.
| FODM1009R2 |
|
Виробник: onsemi
Description: OPTOISO 5KV 1CH TRANS LSOP4
Packaging: Tape & Reel (TR)
Package / Case: 4-SMD, Gull Wing
Output Type: Transistor
Mounting Type: Surface Mount
Operating Temperature: -40°C ~ 110°C
Voltage - Forward (Vf) (Typ): 1.4V
Input Type: DC
Current - Output / Channel: 50mA
Voltage - Isolation: 5000Vrms
Current Transfer Ratio (Min): 200% @ 5mA
Vce Saturation (Max): 300mV
Current Transfer Ratio (Max): 400% @ 5mA
Supplier Device Package: 4-SOP
Voltage - Output (Max): 70V
Rise / Fall Time (Typ): 5.7µs, 8.5µs
Part Status: Active
Number of Channels: 1
Current - DC Forward (If) (Max): 50 mA
Description: OPTOISO 5KV 1CH TRANS LSOP4
Packaging: Tape & Reel (TR)
Package / Case: 4-SMD, Gull Wing
Output Type: Transistor
Mounting Type: Surface Mount
Operating Temperature: -40°C ~ 110°C
Voltage - Forward (Vf) (Typ): 1.4V
Input Type: DC
Current - Output / Channel: 50mA
Voltage - Isolation: 5000Vrms
Current Transfer Ratio (Min): 200% @ 5mA
Vce Saturation (Max): 300mV
Current Transfer Ratio (Max): 400% @ 5mA
Supplier Device Package: 4-SOP
Voltage - Output (Max): 70V
Rise / Fall Time (Typ): 5.7µs, 8.5µs
Part Status: Active
Number of Channels: 1
Current - DC Forward (If) (Max): 50 mA
на замовлення 3000 шт:
термін постачання 21-31 дні (днів)
| Кількість | Ціна без ПДВ |
|---|---|
| 3000+ | 16.44 грн |
| FODM1007R2 |
|
Виробник: onsemi
Description: OPTOISO 5KV 1CH TRANS LSOP4
Packaging: Cut Tape (CT)
Package / Case: 4-SMD, Gull Wing
Output Type: Transistor
Mounting Type: Surface Mount
Operating Temperature: -40°C ~ 110°C
Voltage - Forward (Vf) (Typ): 1.4V
Input Type: DC
Current - Output / Channel: 50mA
Voltage - Isolation: 5000Vrms
Current Transfer Ratio (Min): 80% @ 5mA
Vce Saturation (Max): 300mV
Current Transfer Ratio (Max): 160% @ 5mA
Supplier Device Package: 4-SOP
Voltage - Output (Max): 70V
Rise / Fall Time (Typ): 5.7µs, 8.5µs
Part Status: Active
Number of Channels: 1
Current - DC Forward (If) (Max): 50 mA
Description: OPTOISO 5KV 1CH TRANS LSOP4
Packaging: Cut Tape (CT)
Package / Case: 4-SMD, Gull Wing
Output Type: Transistor
Mounting Type: Surface Mount
Operating Temperature: -40°C ~ 110°C
Voltage - Forward (Vf) (Typ): 1.4V
Input Type: DC
Current - Output / Channel: 50mA
Voltage - Isolation: 5000Vrms
Current Transfer Ratio (Min): 80% @ 5mA
Vce Saturation (Max): 300mV
Current Transfer Ratio (Max): 160% @ 5mA
Supplier Device Package: 4-SOP
Voltage - Output (Max): 70V
Rise / Fall Time (Typ): 5.7µs, 8.5µs
Part Status: Active
Number of Channels: 1
Current - DC Forward (If) (Max): 50 mA
на замовлення 253 шт:
термін постачання 21-31 дні (днів)
| Кількість | Ціна без ПДВ |
|---|---|
| 7+ | 46.49 грн |
| 10+ | 30.97 грн |
| 100+ | 22.41 грн |
| FODM1009R2 |
|
Виробник: onsemi
Description: OPTOISO 5KV 1CH TRANS LSOP4
Packaging: Cut Tape (CT)
Package / Case: 4-SMD, Gull Wing
Output Type: Transistor
Mounting Type: Surface Mount
Operating Temperature: -40°C ~ 110°C
Voltage - Forward (Vf) (Typ): 1.4V
Input Type: DC
Current - Output / Channel: 50mA
Voltage - Isolation: 5000Vrms
Current Transfer Ratio (Min): 200% @ 5mA
Vce Saturation (Max): 300mV
Current Transfer Ratio (Max): 400% @ 5mA
Supplier Device Package: 4-SOP
Voltage - Output (Max): 70V
Rise / Fall Time (Typ): 5.7µs, 8.5µs
Part Status: Active
Number of Channels: 1
Current - DC Forward (If) (Max): 50 mA
Description: OPTOISO 5KV 1CH TRANS LSOP4
Packaging: Cut Tape (CT)
Package / Case: 4-SMD, Gull Wing
Output Type: Transistor
Mounting Type: Surface Mount
Operating Temperature: -40°C ~ 110°C
Voltage - Forward (Vf) (Typ): 1.4V
Input Type: DC
Current - Output / Channel: 50mA
Voltage - Isolation: 5000Vrms
Current Transfer Ratio (Min): 200% @ 5mA
Vce Saturation (Max): 300mV
Current Transfer Ratio (Max): 400% @ 5mA
Supplier Device Package: 4-SOP
Voltage - Output (Max): 70V
Rise / Fall Time (Typ): 5.7µs, 8.5µs
Part Status: Active
Number of Channels: 1
Current - DC Forward (If) (Max): 50 mA
на замовлення 4791 шт:
термін постачання 21-31 дні (днів)
| Кількість | Ціна без ПДВ |
|---|---|
| 7+ | 46.49 грн |
| 10+ | 31.19 грн |
| 100+ | 22.59 грн |
| 500+ | 17.57 грн |
| 1000+ | 16.39 грн |
| FDD86569-F085 |
|
Виробник: onsemi
Description: MOSFET N-CH 60V 90A DPAK
Packaging: Cut Tape (CT)
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 90A (Tc)
Rds On (Max) @ Id, Vgs: 5.7mOhm @ 80A, 10V
Power Dissipation (Max): 150W (Tj)
Vgs(th) (Max) @ Id: 4V @ 250µA
Supplier Device Package: TO-252AA
Grade: Automotive
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 60 V
Gate Charge (Qg) (Max) @ Vgs: 52 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 2520 pF @ 30 V
Qualification: AEC-Q101
Description: MOSFET N-CH 60V 90A DPAK
Packaging: Cut Tape (CT)
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 90A (Tc)
Rds On (Max) @ Id, Vgs: 5.7mOhm @ 80A, 10V
Power Dissipation (Max): 150W (Tj)
Vgs(th) (Max) @ Id: 4V @ 250µA
Supplier Device Package: TO-252AA
Grade: Automotive
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 60 V
Gate Charge (Qg) (Max) @ Vgs: 52 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 2520 pF @ 30 V
Qualification: AEC-Q101
на замовлення 13895 шт:
термін постачання 21-31 дні (днів)
| Кількість | Ціна без ПДВ |
|---|---|
| 3+ | 135.61 грн |
| 10+ | 83.28 грн |
| 100+ | 56.21 грн |
| 500+ | 41.83 грн |
| 1000+ | 38.31 грн |