Продукція > TOSHIBA SEMICONDUCTOR AND STORAGE > Всі товари виробника TOSHIBA SEMICONDUCTOR AND STORAGE (13548) > Сторінка 144 з 226
| Фото | Назва | Виробник | Інформація |
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2SK208-R(TE85L,F) | Toshiba Semiconductor and Storage |
Description: JFET N-CH 50V 6.5MA SMINIPackaging: Tape & Reel (TR) Package / Case: TO-236-3, SC-59, SOT-23-3 Mounting Type: Surface Mount Operating Temperature: 125°C (TJ) FET Type: N-Channel Input Capacitance (Ciss) (Max) @ Vds: 8.2pF @ 10V Voltage - Breakdown (V(BR)GSS): 50 V Current Drain (Id) - Max: 6.5 mA Supplier Device Package: S-Mini Part Status: Active Power - Max: 100 mW Voltage - Cutoff (VGS off) @ Id: 400 mV @ 100 nA Current - Drain (Idss) @ Vds (Vgs=0): 300 µA @ 10 V |
на замовлення 9000 шт: термін постачання 21-31 дні (днів) |
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2SK208-R(TE85L,F) | Toshiba Semiconductor and Storage |
Description: JFET N-CH 50V 6.5MA SMINIPackaging: Cut Tape (CT) Package / Case: TO-236-3, SC-59, SOT-23-3 Mounting Type: Surface Mount Operating Temperature: 125°C (TJ) FET Type: N-Channel Input Capacitance (Ciss) (Max) @ Vds: 8.2pF @ 10V Voltage - Breakdown (V(BR)GSS): 50 V Current Drain (Id) - Max: 6.5 mA Supplier Device Package: S-Mini Part Status: Active Power - Max: 100 mW Voltage - Cutoff (VGS off) @ Id: 400 mV @ 100 nA Current - Drain (Idss) @ Vds (Vgs=0): 300 µA @ 10 V |
на замовлення 15539 шт: термін постачання 21-31 дні (днів) |
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RN4989FE,LF(CT | Toshiba Semiconductor and Storage |
Description: TRANS PREBIAS 1NPN 1PNP 50V ES6Packaging: Tape & Reel (TR) Package / Case: SOT-563, SOT-666 Mounting Type: Surface Mount Transistor Type: 1 NPN, 1 PNP - Pre-Biased (Dual) Power - Max: 100mW Current - Collector (Ic) (Max): 100mA Voltage - Collector Emitter Breakdown (Max): 50V Vce Saturation (Max) @ Ib, Ic: 300mV @ 250µA, 5mA Current - Collector Cutoff (Max): 500nA DC Current Gain (hFE) (Min) @ Ic, Vce: 70 @ 10mA, 5V Frequency - Transition: 250MHz, 200MHz Resistor - Base (R1): 47kOhms Resistor - Emitter Base (R2): 22kOhms Supplier Device Package: ES6 |
на замовлення 4000 шт: термін постачання 21-31 дні (днів) |
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RN4989FE,LF(CT | Toshiba Semiconductor and Storage |
Description: TRANS PREBIAS 1NPN 1PNP 50V ES6Packaging: Cut Tape (CT) Package / Case: SOT-563, SOT-666 Mounting Type: Surface Mount Transistor Type: 1 NPN, 1 PNP - Pre-Biased (Dual) Power - Max: 100mW Current - Collector (Ic) (Max): 100mA Voltage - Collector Emitter Breakdown (Max): 50V Vce Saturation (Max) @ Ib, Ic: 300mV @ 250µA, 5mA Current - Collector Cutoff (Max): 500nA DC Current Gain (hFE) (Min) @ Ic, Vce: 70 @ 10mA, 5V Frequency - Transition: 250MHz, 200MHz Resistor - Base (R1): 47kOhms Resistor - Emitter Base (R2): 22kOhms Supplier Device Package: ES6 |
на замовлення 4000 шт: термін постачання 21-31 дні (днів) |
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TC74HC00AFELF | Toshiba Semiconductor and Storage |
Description: IC GATE NAND 4CH 2-INP 14SOPPackaging: Tape & Reel (TR) Package / Case: 14-SOIC (0.209", 5.30mm Width) Mounting Type: Surface Mount Logic Type: NAND Gate Operating Temperature: -40°C ~ 85°C Voltage - Supply: 2V ~ 6V Current - Output High, Low: 5.2mA, 5.2mA Number of Inputs: 2 Supplier Device Package: 14-SOP Input Logic Level - High: 1.5V ~ 4.2V Input Logic Level - Low: 0.5V ~ 1.8V Max Propagation Delay @ V, Max CL: 13ns @ 6V, 50pF Part Status: Not For New Designs Number of Circuits: 4 Current - Quiescent (Max): 1 µA |
товару немає в наявності |
Мінімальне замовлення: 2000 шт В кошику од. на суму грн. | ||||||||||||||||||
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TC78H653FTG,EL | Toshiba Semiconductor and Storage |
Description: IC MTR DRVR BIPOLR 1.8-7V 16VQONMotor Type - AC, DC: Brushed DC Motor Type - Stepper: Bipolar Supplier Device Package: 16-VQFN (3x3) Voltage - Load: 1.8V ~ 7V Technology: DMOS Applications: General Purpose Voltage - Supply: 1.8V ~ 7V Output Configuration: Half Bridge (4) Operating Temperature: -40°C ~ 105°C Current - Output: 4A Function: Driver - Fully Integrated, Control and Power Stage Mounting Type: Surface Mount Package / Case: 16-VFQFN Exposed Pad Packaging: Tape & Reel (TR) |
на замовлення 12000 шт: термін постачання 21-31 дні (днів) |
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TC78H653FTG,EL | Toshiba Semiconductor and Storage |
Description: IC MTR DRVR BIPOLR 1.8-7V 16VQONMotor Type - AC, DC: Brushed DC Motor Type - Stepper: Bipolar Supplier Device Package: 16-VQFN (3x3) Voltage - Load: 1.8V ~ 7V Technology: DMOS Applications: General Purpose Voltage - Supply: 1.8V ~ 7V Output Configuration: Half Bridge (4) Operating Temperature: -40°C ~ 105°C Current - Output: 4A Function: Driver - Fully Integrated, Control and Power Stage Mounting Type: Surface Mount Package / Case: 16-VFQFN Exposed Pad Packaging: Cut Tape (CT) |
на замовлення 18628 шт: термін постачання 21-31 дні (днів) |
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SSM6K361NU,LF | Toshiba Semiconductor and Storage |
Description: MOSFET N-CH 100V 3.5A 6UDFNBDrain to Source Voltage (Vdss): 100 V Vgs (Max): ±20V Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Part Status: Active Supplier Device Package: 6-UDFNB (2x2) Vgs(th) (Max) @ Id: 2.5V @ 100µA Power Dissipation (Max): 1.25W (Ta) Rds On (Max) @ Id, Vgs: 69mOhm @ 2A, 10V Current - Continuous Drain (Id) @ 25°C: 3.5A (Ta) FET Type: N-Channel Technology: MOSFET (Metal Oxide) Operating Temperature: 150°C Mounting Type: Surface Mount Package / Case: 6-WDFN Exposed Pad Packaging: Tape & Reel (TR) Input Capacitance (Ciss) (Max) @ Vds: 430 pF @ 15 V Gate Charge (Qg) (Max) @ Vgs: 3.2 nC @ 4.5 V |
товару немає в наявності |
Мінімальне замовлення: 3000 шт В кошику од. на суму грн. | ||||||||||||||||||
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SSM6K361NU,LF | Toshiba Semiconductor and Storage |
Description: MOSFET N-CH 100V 3.5A 6UDFNBGate Charge (Qg) (Max) @ Vgs: 3.2 nC @ 4.5 V Drain to Source Voltage (Vdss): 100 V Vgs (Max): ±20V Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Part Status: Active Supplier Device Package: 6-UDFNB (2x2) Vgs(th) (Max) @ Id: 2.5V @ 100µA Power Dissipation (Max): 1.25W (Ta) Rds On (Max) @ Id, Vgs: 69mOhm @ 2A, 10V Current - Continuous Drain (Id) @ 25°C: 3.5A (Ta) FET Type: N-Channel Technology: MOSFET (Metal Oxide) Operating Temperature: 150°C Mounting Type: Surface Mount Package / Case: 6-WDFN Exposed Pad Packaging: Cut Tape (CT) Input Capacitance (Ciss) (Max) @ Vds: 430 pF @ 15 V |
на замовлення 2324 шт: термін постачання 21-31 дні (днів) |
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TLP3407SRH(TP,E | Toshiba Semiconductor and Storage |
Description: SSR RELAY SPST-NO 1A 0-60VPackaging: Tape & Reel (TR) Package / Case: 4-SMD (0.079", 2.00mm) Output Type: AC, DC Mounting Type: Surface Mount Voltage - Input: 1.4VDC Circuit: SPST-NO (1 Form A) Operating Temperature: -40°C ~ 110°C Termination Style: SMD (SMT) Tab Load Current: 1 A Relay Type: Photo-Coupled Relay (Photorelay) Supplier Device Package: S-VSON4T (2x1.45) Part Status: Active Voltage - Load: 0 V ~ 60 V On-State Resistance (Max): 300 mOhms |
товару немає в наявності |
Мінімальне замовлення: 2500 шт В кошику од. на суму грн. | ||||||||||||||||||
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TLP3407SRH(TP,E | Toshiba Semiconductor and Storage |
Description: SSR RELAY SPST-NO 1A 0-60VPackaging: Cut Tape (CT) Package / Case: 4-SMD (0.079", 2.00mm) Output Type: AC, DC Mounting Type: Surface Mount Voltage - Input: 1.4VDC Circuit: SPST-NO (1 Form A) Operating Temperature: -40°C ~ 110°C Termination Style: SMD (SMT) Tab Load Current: 1 A Relay Type: Photo-Coupled Relay (Photorelay) Supplier Device Package: S-VSON4T (2x1.45) Part Status: Active Voltage - Load: 0 V ~ 60 V On-State Resistance (Max): 300 mOhms |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||||||||||||
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TLP3407SRL(TP,E | Toshiba Semiconductor and Storage |
Description: SSR RELAY SPST-NO 1A 0-60VPackaging: Tape & Reel (TR) Package / Case: 4-SMD (0.079", 2.00mm) Output Type: AC, DC Mounting Type: Surface Mount Voltage - Input: 1.2VDC Circuit: SPST-NO (1 Form A) Operating Temperature: -40°C ~ 110°C Termination Style: SMD (SMT) Tab Load Current: 1 A Relay Type: Photo-Coupled Relay (Photorelay) Supplier Device Package: S-VSON4T (2x1.45) Part Status: Active Voltage - Load: 0 V ~ 60 V On-State Resistance (Max): 300 mOhms |
товару немає в наявності |
Мінімальне замовлення: 2500 шт В кошику од. на суму грн. | ||||||||||||||||||
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TLP3407SRL(TP,E | Toshiba Semiconductor and Storage |
Description: SSR RELAY SPST-NO 1A 0-60VPackaging: Cut Tape (CT) Package / Case: 4-SMD (0.079", 2.00mm) Output Type: AC, DC Mounting Type: Surface Mount Voltage - Input: 1.2VDC Circuit: SPST-NO (1 Form A) Operating Temperature: -40°C ~ 110°C Termination Style: SMD (SMT) Tab Load Current: 1 A Relay Type: Photo-Coupled Relay (Photorelay) Supplier Device Package: S-VSON4T (2x1.45) Part Status: Active Voltage - Load: 0 V ~ 60 V On-State Resistance (Max): 300 mOhms |
на замовлення 1364 шт: термін постачання 21-31 дні (днів) |
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TLP3407S(TP,E | Toshiba Semiconductor and Storage |
Description: SSR RELAY SPST-NO 1A 0-60VPackaging: Tape & Reel (TR) Package / Case: 4-SMD (0.079", 2.00mm) Output Type: AC, DC Mounting Type: Surface Mount Voltage - Input: 1.26VDC Circuit: SPST-NO (1 Form A) Operating Temperature: -40°C ~ 110°C Termination Style: SMD (SMT) Tab Load Current: 1 A Relay Type: Photo-Coupled Relay (Photorelay) Supplier Device Package: 4-S-VSON Part Status: Active Voltage - Load: 0 V ~ 60 V On-State Resistance (Max): 300 mOhms |
на замовлення 42500 шт: термін постачання 21-31 дні (днів) |
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TLP3407S(TP,E | Toshiba Semiconductor and Storage |
Description: SSR RELAY SPST-NO 1A 0-60VOn-State Resistance (Max): 300 mOhms Voltage - Load: 0 V ~ 60 V Part Status: Active Supplier Device Package: 4-S-VSON Load Current: 1 A Termination Style: SMD (SMT) Tab Circuit: SPST-NO (1 Form A) Voltage - Input: 1.26VDC Mounting Type: Surface Mount Output Type: AC, DC Relay Type: Photo-Coupled Relay (Photorelay) Package / Case: 4-SMD (0.079", 2.00mm) Packaging: Cut Tape (CT) Operating Temperature: -40°C ~ 110°C |
на замовлення 44343 шт: термін постачання 21-31 дні (днів) |
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TLP2372(TPL,E | Toshiba Semiconductor and Storage |
Description: OPTOISOLTR 3.75KV PUSH PULL 6-SOPackaging: Tape & Reel (TR) Package / Case: 6-SOIC (0.179", 4.55mm Width), 5 Leads Output Type: Push-Pull, Totem Pole Mounting Type: Surface Mount Operating Temperature: -40°C ~ 125°C Voltage - Supply: 2.2V ~ 5.5V Voltage - Forward (Vf) (Typ): 1.53V Data Rate: 20Mbps Input Type: DC Voltage - Isolation: 3750Vrms Current - DC Forward (If) (Max): 8mA Inputs - Side 1/Side 2: 1/0 Supplier Device Package: 6-SO, 5 Lead Rise / Fall Time (Typ): 2.2ns, 1.6ns Common Mode Transient Immunity (Min): 20kV/µs Propagation Delay tpLH / tpHL (Max): 75ns, 75ns Part Status: Active Number of Channels: 1 Current - Output / Channel: 8 mA |
на замовлення 3000 шт: термін постачання 21-31 дні (днів) |
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TLP2372(TPL,E | Toshiba Semiconductor and Storage |
Description: OPTOISOLTR 3.75KV PUSH PULL 6-SOPackaging: Cut Tape (CT) Package / Case: 6-SOIC (0.179", 4.55mm Width), 5 Leads Output Type: Push-Pull, Totem Pole Mounting Type: Surface Mount Operating Temperature: -40°C ~ 125°C Voltage - Supply: 2.2V ~ 5.5V Voltage - Forward (Vf) (Typ): 1.53V Data Rate: 20Mbps Input Type: DC Voltage - Isolation: 3750Vrms Current - DC Forward (If) (Max): 8mA Inputs - Side 1/Side 2: 1/0 Supplier Device Package: 6-SO, 5 Lead Rise / Fall Time (Typ): 2.2ns, 1.6ns Common Mode Transient Immunity (Min): 20kV/µs Propagation Delay tpLH / tpHL (Max): 75ns, 75ns Part Status: Active Number of Channels: 1 Current - Output / Channel: 8 mA |
на замовлення 4489 шт: термін постачання 21-31 дні (днів) |
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TLP3553(F) | Toshiba Semiconductor and Storage |
Description: SSR RELAY SPST-NO 3A 0-20VPackaging: Tube Package / Case: 4-DIP (0.300", 7.62mm) Output Type: AC, DC Mounting Type: Through Hole Voltage - Input: 1.33VDC Circuit: SPST-NO (1 Form A) Operating Temperature: -40°C ~ 85°C Termination Style: PC Pin Load Current: 3 A Approval Agency: CSA, cUL, UL Relay Type: Photo-Coupled Relay (Photorelay) Supplier Device Package: 4-DIP Part Status: Active Voltage - Load: 0 V ~ 20 V On-State Resistance (Max): 80 mOhms |
на замовлення 88 шт: термін постачання 21-31 дні (днів) |
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TPH1R306P1,L1Q | Toshiba Semiconductor and Storage |
Description: MOSFET N-CH 60V 100A 8SOPVgs(th) (Max) @ Id: 2.5V @ 1mA Power Dissipation (Max): 960mW (Ta), 170W (Tc) Rds On (Max) @ Id, Vgs: 1.28mOhm @ 50A, 10V Current - Continuous Drain (Id) @ 25°C: 100A (Tc) FET Type: N-Channel Technology: MOSFET (Metal Oxide) Operating Temperature: 175°C Mounting Type: Surface Mount Package / Case: 8-PowerVDFN Packaging: Tape & Reel (TR) Input Capacitance (Ciss) (Max) @ Vds: 8100 pF @ 30 V Gate Charge (Qg) (Max) @ Vgs: 91 nC @ 10 V Drain to Source Voltage (Vdss): 60 V Vgs (Max): ±20V Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Supplier Device Package: 8-SOP Advance (5x5) |
на замовлення 5000 шт: термін постачання 21-31 дні (днів) |
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TPH1R306P1,L1Q | Toshiba Semiconductor and Storage |
Description: MOSFET N-CH 60V 100A 8SOPInput Capacitance (Ciss) (Max) @ Vds: 8100 pF @ 30 V Gate Charge (Qg) (Max) @ Vgs: 91 nC @ 10 V Drain to Source Voltage (Vdss): 60 V Vgs (Max): ±20V Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Supplier Device Package: 8-SOP Advance (5x5) Vgs(th) (Max) @ Id: 2.5V @ 1mA Power Dissipation (Max): 960mW (Ta), 170W (Tc) Rds On (Max) @ Id, Vgs: 1.28mOhm @ 50A, 10V Current - Continuous Drain (Id) @ 25°C: 100A (Tc) FET Type: N-Channel Technology: MOSFET (Metal Oxide) Operating Temperature: 175°C Mounting Type: Surface Mount Package / Case: 8-PowerVDFN Packaging: Cut Tape (CT) |
на замовлення 9539 шт: термін постачання 21-31 дні (днів) |
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TLP2631(LF5,F) | Toshiba Semiconductor and Storage |
Description: OPTOISO 2.5KV 2CH OPN COLL 8-SMDInputs - Side 1/Side 2: 2/0 Current - DC Forward (If) (Max): 20mA Voltage - Isolation: 2500Vrms Input Type: DC Data Rate: 10MBd Voltage - Forward (Vf) (Typ): 1.65V Voltage - Supply: 4.5V ~ 5.5V Operating Temperature: -40°C ~ 85°C Mounting Type: Surface Mount Output Type: Open Collector, Schottky Clamped Package / Case: 8-SMD, Gull Wing Packaging: Tube Current - Output / Channel: 16 mA Number of Channels: 2 Propagation Delay tpLH / tpHL (Max): 75ns, 75ns Common Mode Transient Immunity (Min): 1kV/µs Rise / Fall Time (Typ): 30ns, 30ns Supplier Device Package: 8-SMD |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||||||||||||
| TLP2631(LF1,F) | Toshiba Semiconductor and Storage |
Description: PHOTOCOUPLER Packaging: Tube |
товару немає в наявності |
В кошику од. на суму грн. | |||||||||||||||||||
| TLP2631(TP5,F) | Toshiba Semiconductor and Storage |
Description: PHOTOCOUPLER Packaging: Tape & Reel (TR) |
товару немає в наявності |
В кошику од. на суму грн. | |||||||||||||||||||
| TLP2631(MBS,F) | Toshiba Semiconductor and Storage |
Description: PHOTOCOUPLER Packaging: Tube |
товару немає в наявності |
В кошику од. на суму грн. | |||||||||||||||||||
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7UL1G86FU,LF | Toshiba Semiconductor and Storage |
Description: IC GATE XOR 1CH 2-INP 5SSOPInput Logic Level - Low: 0.1V ~ 0.4V Input Logic Level - High: 0.75V ~ 2.48V Supplier Device Package: 5-SSOP Number of Inputs: 2 Current - Output High, Low: 8mA, 8mA Voltage - Supply: 0.9V ~ 3.6V Operating Temperature: -40°C ~ 85°C Logic Type: XOR (Exclusive OR) Mounting Type: Surface Mount Package / Case: 5-TSSOP, SC-70-5, SOT-353 Packaging: Tape & Reel (TR) Current - Quiescent (Max): 1 µA Number of Circuits: 1 Max Propagation Delay @ V, Max CL: 4.4ns @ 3.3V, 30pF |
товару немає в наявності |
Мінімальне замовлення: 3000 шт В кошику од. на суму грн. | ||||||||||||||||||
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7UL1G86FU,LF | Toshiba Semiconductor and Storage |
Description: IC GATE XOR 1CH 2-INP 5SSOPPackaging: Cut Tape (CT) Package / Case: 5-TSSOP, SC-70-5, SOT-353 Mounting Type: Surface Mount Logic Type: XOR (Exclusive OR) Operating Temperature: -40°C ~ 85°C Voltage - Supply: 0.9V ~ 3.6V Current - Output High, Low: 8mA, 8mA Number of Inputs: 2 Supplier Device Package: 5-SSOP Input Logic Level - High: 0.75V ~ 2.48V Input Logic Level - Low: 0.1V ~ 0.4V Max Propagation Delay @ V, Max CL: 4.4ns @ 3.3V, 30pF Number of Circuits: 1 Current - Quiescent (Max): 1 µA |
на замовлення 2774 шт: термін постачання 21-31 дні (днів) |
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7UL1G02FU,LF | Toshiba Semiconductor and Storage |
Description: IC GATE NOR 1CH 2-INP 5SSOPPackaging: Tape & Reel (TR) Package / Case: 5-TSSOP, SC-70-5, SOT-353 Mounting Type: Surface Mount Logic Type: NOR Gate Operating Temperature: -40°C ~ 85°C Voltage - Supply: 0.9V ~ 3.6V Current - Output High, Low: 8mA, 8mA Number of Inputs: 2 Supplier Device Package: 5-SSOP Input Logic Level - High: 0.75V ~ 2.48V Input Logic Level - Low: 0.1V ~ 0.4V Max Propagation Delay @ V, Max CL: 4.4ns @ 3.3V, 30pF Number of Circuits: 1 Current - Quiescent (Max): 1 µA |
товару немає в наявності |
Мінімальне замовлення: 3000 шт В кошику од. на суму грн. | ||||||||||||||||||
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7UL1G02FU,LF | Toshiba Semiconductor and Storage |
Description: IC GATE NOR 1CH 2-INP 5SSOPPackaging: Cut Tape (CT) Package / Case: 5-TSSOP, SC-70-5, SOT-353 Mounting Type: Surface Mount Logic Type: NOR Gate Operating Temperature: -40°C ~ 85°C Voltage - Supply: 0.9V ~ 3.6V Current - Output High, Low: 8mA, 8mA Number of Inputs: 2 Supplier Device Package: 5-SSOP Input Logic Level - High: 0.75V ~ 2.48V Input Logic Level - Low: 0.1V ~ 0.4V Max Propagation Delay @ V, Max CL: 4.4ns @ 3.3V, 30pF Number of Circuits: 1 Current - Quiescent (Max): 1 µA |
на замовлення 4940 шт: термін постачання 21-31 дні (днів) |
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7UL1G08FU,LF | Toshiba Semiconductor and Storage |
Description: IC GATE AND 1CH 2-INP 5SSOP Packaging: Tape & Reel (TR) Package / Case: 5-TSSOP, SC-70-5, SOT-353 Mounting Type: Surface Mount Logic Type: AND Gate Operating Temperature: -40°C ~ 85°C Voltage - Supply: 0.9V ~ 3.6V Current - Output High, Low: 8mA, 8mA Number of Inputs: 2 Supplier Device Package: 5-SSOP Input Logic Level - High: 0.75V ~ 2.48V Input Logic Level - Low: 0.1V ~ 0.4V Max Propagation Delay @ V, Max CL: 4.4ns @ 3.3V, 30pF Part Status: Active Number of Circuits: 1 Current - Quiescent (Max): 1 µA |
на замовлення 3000 шт: термін постачання 21-31 дні (днів) |
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7UL1G08FU,LF | Toshiba Semiconductor and Storage |
Description: IC GATE AND 1CH 2-INP 5SSOP Packaging: Cut Tape (CT) Package / Case: 5-TSSOP, SC-70-5, SOT-353 Mounting Type: Surface Mount Logic Type: AND Gate Operating Temperature: -40°C ~ 85°C Voltage - Supply: 0.9V ~ 3.6V Current - Output High, Low: 8mA, 8mA Number of Inputs: 2 Supplier Device Package: 5-SSOP Input Logic Level - High: 0.75V ~ 2.48V Input Logic Level - Low: 0.1V ~ 0.4V Max Propagation Delay @ V, Max CL: 4.4ns @ 3.3V, 30pF Part Status: Active Number of Circuits: 1 Current - Quiescent (Max): 1 µA |
на замовлення 3385 шт: термін постачання 21-31 дні (днів) |
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7UL1G32FU,LF | Toshiba Semiconductor and Storage |
Description: IC GATE OR 1CH 2-INP 5SSOP Packaging: Tape & Reel (TR) Package / Case: 5-TSSOP, SC-70-5, SOT-353 Mounting Type: Surface Mount Logic Type: OR Gate Operating Temperature: -40°C ~ 85°C Voltage - Supply: 0.9V ~ 3.6V Current - Output High, Low: 8mA, 8mA Number of Inputs: 2 Supplier Device Package: 5-SSOP Input Logic Level - High: 0.75V ~ 2.48V Input Logic Level - Low: 0.1V ~ 0.4V Max Propagation Delay @ V, Max CL: 4.4ns @ 3.3V, 30pF Part Status: Active Number of Circuits: 1 Current - Quiescent (Max): 1 µA |
на замовлення 3000 шт: термін постачання 21-31 дні (днів) |
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7UL1G32FU,LF | Toshiba Semiconductor and Storage |
Description: IC GATE OR 1CH 2-INP 5SSOP Packaging: Cut Tape (CT) Package / Case: 5-TSSOP, SC-70-5, SOT-353 Mounting Type: Surface Mount Logic Type: OR Gate Operating Temperature: -40°C ~ 85°C Voltage - Supply: 0.9V ~ 3.6V Current - Output High, Low: 8mA, 8mA Number of Inputs: 2 Supplier Device Package: 5-SSOP Input Logic Level - High: 0.75V ~ 2.48V Input Logic Level - Low: 0.1V ~ 0.4V Max Propagation Delay @ V, Max CL: 4.4ns @ 3.3V, 30pF Part Status: Active Number of Circuits: 1 Current - Quiescent (Max): 1 µA |
на замовлення 3410 шт: термін постачання 21-31 дні (днів) |
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7UL1G04FU,LF | Toshiba Semiconductor and Storage |
Description: IC INVERTER 1CH 1-INP 5SSOP Packaging: Tape & Reel (TR) Package / Case: 5-TSSOP, SC-70-5, SOT-353 Mounting Type: Surface Mount Logic Type: Inverter Operating Temperature: -40°C ~ 125°C Voltage - Supply: 0.9V ~ 3.6V Current - Output High, Low: 8mA, 8mA Number of Inputs: 1 Supplier Device Package: 5-SSOP Input Logic Level - High: 0.75V ~ 2.48V Input Logic Level - Low: 0.1V ~ 0.4V Max Propagation Delay @ V, Max CL: 4.4ns @ 3.3V, 30pF Part Status: Active Number of Circuits: 1 Current - Quiescent (Max): 1 µA |
товару немає в наявності |
Мінімальне замовлення: 3000 шт В кошику од. на суму грн. | ||||||||||||||||||
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7UL1G04FU,LF | Toshiba Semiconductor and Storage |
Description: IC INVERTER 1CH 1-INP 5SSOP Packaging: Cut Tape (CT) Package / Case: 5-TSSOP, SC-70-5, SOT-353 Mounting Type: Surface Mount Logic Type: Inverter Operating Temperature: -40°C ~ 125°C Voltage - Supply: 0.9V ~ 3.6V Current - Output High, Low: 8mA, 8mA Number of Inputs: 1 Supplier Device Package: 5-SSOP Input Logic Level - High: 0.75V ~ 2.48V Input Logic Level - Low: 0.1V ~ 0.4V Max Propagation Delay @ V, Max CL: 4.4ns @ 3.3V, 30pF Part Status: Active Number of Circuits: 1 Current - Quiescent (Max): 1 µA |
на замовлення 2854 шт: термін постачання 21-31 дні (днів) |
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7UL1G34FU,LF | Toshiba Semiconductor and Storage |
Description: IC BUFFER NON-INVERT 3.6V USVPackaging: Tape & Reel (TR) Package / Case: 5-TSSOP, SC-70-5, SOT-353 Mounting Type: Surface Mount Number of Elements: 1 Logic Type: Buffer, Non-Inverting Operating Temperature: -40°C ~ 85°C Voltage - Supply: 0.9V ~ 3.6V Number of Bits per Element: 1 Current - Output High, Low: 8mA, 8mA Supplier Device Package: 5-SSOP |
товару немає в наявності |
Мінімальне замовлення: 3000 шт В кошику од. на суму грн. | ||||||||||||||||||
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7UL1G34FU,LF | Toshiba Semiconductor and Storage |
Description: IC BUFFER NON-INVERT 3.6V USVPackaging: Cut Tape (CT) Package / Case: 5-TSSOP, SC-70-5, SOT-353 Mounting Type: Surface Mount Number of Elements: 1 Logic Type: Buffer, Non-Inverting Operating Temperature: -40°C ~ 85°C Voltage - Supply: 0.9V ~ 3.6V Number of Bits per Element: 1 Current - Output High, Low: 8mA, 8mA Supplier Device Package: 5-SSOP |
на замовлення 2900 шт: термін постачання 21-31 дні (днів) |
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7UL1G04FS,LF | Toshiba Semiconductor and Storage |
Description: IC INVERTER 1CH 1-INP FSVPackaging: Tape & Reel (TR) Package / Case: SOT-953 Mounting Type: Surface Mount Logic Type: Inverter Operating Temperature: -40°C ~ 125°C Voltage - Supply: 0.9V ~ 3.6V Current - Output High, Low: 8mA, 8mA Number of Inputs: 1 Supplier Device Package: fSV Input Logic Level - High: 0.75V ~ 2.48V Input Logic Level - Low: 0.1V ~ 0.4V Max Propagation Delay @ V, Max CL: 4.4ns @ 3.3V, 30pF Part Status: Active Number of Circuits: 1 Current - Quiescent (Max): 1 µA |
товару немає в наявності |
Мінімальне замовлення: 10000 шт В кошику од. на суму грн. | ||||||||||||||||||
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7UL1G04FS,LF | Toshiba Semiconductor and Storage |
Description: IC INVERTER 1CH 1-INP FSVPackaging: Cut Tape (CT) Package / Case: SOT-953 Mounting Type: Surface Mount Logic Type: Inverter Operating Temperature: -40°C ~ 125°C Voltage - Supply: 0.9V ~ 3.6V Current - Output High, Low: 8mA, 8mA Number of Inputs: 1 Supplier Device Package: fSV Input Logic Level - High: 0.75V ~ 2.48V Input Logic Level - Low: 0.1V ~ 0.4V Max Propagation Delay @ V, Max CL: 4.4ns @ 3.3V, 30pF Part Status: Active Number of Circuits: 1 Current - Quiescent (Max): 1 µA |
на замовлення 9850 шт: термін постачання 21-31 дні (днів) |
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7UL1G126FS,LF | Toshiba Semiconductor and Storage |
Description: IC BUFFER NON-INVERT 3.6V FSVPackaging: Tape & Reel (TR) Package / Case: SOT-953 Output Type: 3-State Mounting Type: Surface Mount Number of Elements: 1 Logic Type: Buffer, Non-Inverting Operating Temperature: -40°C ~ 85°C Voltage - Supply: 0.9V ~ 3.6V Number of Bits per Element: 1 Current - Output High, Low: 8mA, 8mA Supplier Device Package: fSV Part Status: Active |
на замовлення 30000 шт: термін постачання 21-31 дні (днів) |
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7UL1G126FS,LF | Toshiba Semiconductor and Storage |
Description: IC BUFFER NON-INVERT 3.6V FSVPackaging: Cut Tape (CT) Package / Case: SOT-953 Output Type: 3-State Mounting Type: Surface Mount Number of Elements: 1 Logic Type: Buffer, Non-Inverting Operating Temperature: -40°C ~ 85°C Voltage - Supply: 0.9V ~ 3.6V Number of Bits per Element: 1 Current - Output High, Low: 8mA, 8mA Supplier Device Package: fSV Part Status: Active |
на замовлення 36609 шт: термін постачання 21-31 дні (днів) |
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RN1112MFV,L3F | Toshiba Semiconductor and Storage |
Description: TRANS PREBIAS NPN 50V 0.1A VESMPackaging: Tape & Reel (TR) Package / Case: SOT-723 Mounting Type: Surface Mount Transistor Type: NPN - Pre-Biased Vce Saturation (Max) @ Ib, Ic: 300mV @ 500µA, 5mA Current - Collector Cutoff (Max): 100nA (ICBO) DC Current Gain (hFE) (Min) @ Ic, Vce: 120 @ 1mA, 5V Supplier Device Package: VESM Current - Collector (Ic) (Max): 100 mA Voltage - Collector Emitter Breakdown (Max): 50 V Power - Max: 150 mW Resistor - Base (R1): 22 kOhms |
на замовлення 8000 шт: термін постачання 21-31 дні (днів) |
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RN1112MFV,L3F | Toshiba Semiconductor and Storage |
Description: TRANS PREBIAS NPN 50V 0.1A VESMPackaging: Cut Tape (CT) Package / Case: SOT-723 Mounting Type: Surface Mount Transistor Type: NPN - Pre-Biased Vce Saturation (Max) @ Ib, Ic: 300mV @ 500µA, 5mA Current - Collector Cutoff (Max): 100nA (ICBO) DC Current Gain (hFE) (Min) @ Ic, Vce: 120 @ 1mA, 5V Supplier Device Package: VESM Current - Collector (Ic) (Max): 100 mA Voltage - Collector Emitter Breakdown (Max): 50 V Power - Max: 150 mW Resistor - Base (R1): 22 kOhms |
на замовлення 8000 шт: термін постачання 21-31 дні (днів) |
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RN1113,LF(CT | Toshiba Semiconductor and Storage |
Description: TRANS PREBIAS NPN 50V 0.1A SSM |
на замовлення 3000 шт: термін постачання 21-31 дні (днів) |
Мінімальне замовлення: 3000 шт В кошику од. на суму грн. | ||||||||||||||||||
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RN1113,LF(CT | Toshiba Semiconductor and Storage |
Description: TRANS PREBIAS NPN 50V 0.1A SSM |
на замовлення 3000 шт: термін постачання 21-31 дні (днів) |
В кошику од. на суму грн. | ||||||||||||||||||
| RN1112(TE85L,F) | Toshiba Semiconductor and Storage |
Description: TRANS PREBIAS NPN 50V 0.1A SSM |
на замовлення 3000 шт: термін постачання 21-31 дні (днів) |
Мінімальне замовлення: 3000 шт В кошику од. на суму грн. | |||||||||||||||||||
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RN1117(TE85L,F) | Toshiba Semiconductor and Storage |
Description: TRANS PREBIAS NPN 50V 0.1A SSMPackaging: Tape & Reel (TR) Package / Case: SC-75, SOT-416 Mounting Type: Surface Mount Transistor Type: NPN - Pre-Biased Vce Saturation (Max) @ Ib, Ic: 300mV @ 250µA, 5mA Current - Collector Cutoff (Max): 500nA DC Current Gain (hFE) (Min) @ Ic, Vce: 30 @ 10mA, 5V Supplier Device Package: SSM Part Status: Active Current - Collector (Ic) (Max): 100 mA Voltage - Collector Emitter Breakdown (Max): 50 V Power - Max: 100 mW Frequency - Transition: 250 MHz Resistor - Base (R1): 10 kOhms Resistor - Emitter Base (R2): 4.7 kOhms |
товару немає в наявності |
Мінімальне замовлення: 3000 шт В кошику од. на суму грн. | ||||||||||||||||||
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RN1117(TE85L,F) | Toshiba Semiconductor and Storage |
Description: TRANS PREBIAS NPN 50V 0.1A SSMPackaging: Cut Tape (CT) Package / Case: SC-75, SOT-416 Mounting Type: Surface Mount Transistor Type: NPN - Pre-Biased Vce Saturation (Max) @ Ib, Ic: 300mV @ 250µA, 5mA Current - Collector Cutoff (Max): 500nA DC Current Gain (hFE) (Min) @ Ic, Vce: 30 @ 10mA, 5V Supplier Device Package: SSM Part Status: Active Current - Collector (Ic) (Max): 100 mA Voltage - Collector Emitter Breakdown (Max): 50 V Power - Max: 100 mW Frequency - Transition: 250 MHz Resistor - Base (R1): 10 kOhms Resistor - Emitter Base (R2): 4.7 kOhms |
на замовлення 898 шт: термін постачання 21-31 дні (днів) |
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| RN1118(TE85L,F) | Toshiba Semiconductor and Storage |
Description: TRANS PREBIAS NPN 50V 0.1A SSM |
товару немає в наявності |
Мінімальне замовлення: 3000 шт В кошику од. на суму грн. | |||||||||||||||||||
| RN1118(TE85L,F) | Toshiba Semiconductor and Storage |
Description: TRANS PREBIAS NPN 50V 0.1A SSM |
на замовлення 2970 шт: термін постачання 21-31 дні (днів) |
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RN1115MFV,L3F | Toshiba Semiconductor and Storage |
Description: TRANS PREBIAS NPN 50V 0.1A VESMPackaging: Tape & Reel (TR) Package / Case: SOT-723 Mounting Type: Surface Mount Transistor Type: NPN - Pre-Biased Vce Saturation (Max) @ Ib, Ic: 300mV @ 250µA, 5mA Current - Collector Cutoff (Max): 500nA DC Current Gain (hFE) (Min) @ Ic, Vce: 50 @ 10mA, 5V Supplier Device Package: VESM Current - Collector (Ic) (Max): 100 mA Voltage - Collector Emitter Breakdown (Max): 50 V Power - Max: 150 mW Frequency - Transition: 250 MHz Resistor - Base (R1): 2.2 kOhms Resistor - Emitter Base (R2): 10 kOhms Resistors Included: R1 and R2 |
товару немає в наявності |
Мінімальне замовлення: 8000 шт В кошику од. на суму грн. | ||||||||||||||||||
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RN1114,LF | Toshiba Semiconductor and Storage |
Description: TRANS PREBIAS NPN 50V 0.1A SSMPackaging: Tape & Reel (TR) Package / Case: SC-75, SOT-416 Mounting Type: Surface Mount Transistor Type: NPN - Pre-Biased Vce Saturation (Max) @ Ib, Ic: 300mV @ 250µA, 5mA Current - Collector Cutoff (Max): 500nA DC Current Gain (hFE) (Min) @ Ic, Vce: 50 @ 10mA, 5V Supplier Device Package: SSM Current - Collector (Ic) (Max): 100 mA Voltage - Collector Emitter Breakdown (Max): 50 V Power - Max: 100 mW Frequency - Transition: 250 MHz Resistor - Base (R1): 1 kOhms Resistor - Emitter Base (R2): 10 kOhms Resistors Included: R1 and R2 |
на замовлення 3000 шт: термін постачання 21-31 дні (днів) |
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RN1114,LF | Toshiba Semiconductor and Storage |
Description: TRANS PREBIAS NPN 50V 0.1A SSMPackaging: Cut Tape (CT) Package / Case: SC-75, SOT-416 Mounting Type: Surface Mount Transistor Type: NPN - Pre-Biased Vce Saturation (Max) @ Ib, Ic: 300mV @ 250µA, 5mA Current - Collector Cutoff (Max): 500nA DC Current Gain (hFE) (Min) @ Ic, Vce: 50 @ 10mA, 5V Supplier Device Package: SSM Current - Collector (Ic) (Max): 100 mA Voltage - Collector Emitter Breakdown (Max): 50 V Power - Max: 100 mW Frequency - Transition: 250 MHz Resistor - Base (R1): 1 kOhms Resistor - Emitter Base (R2): 10 kOhms Resistors Included: R1 and R2 |
на замовлення 3000 шт: термін постачання 21-31 дні (днів) |
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XPH4R714MC,L1XHQ | Toshiba Semiconductor and Storage |
Description: MOSFET P-CH 40V 60A 8SOPPackaging: Tape & Reel (TR) Package / Case: 8-PowerVDFN Mounting Type: Surface Mount Operating Temperature: 175°C Technology: MOSFET (Metal Oxide) FET Type: P-Channel Current - Continuous Drain (Id) @ 25°C: 60A (Ta) Rds On (Max) @ Id, Vgs: 4.7mOhm @ 30A, 10V Power Dissipation (Max): 960mW (Ta), 132W (Tc) Vgs(th) (Max) @ Id: 2.1V @ 1mA Supplier Device Package: 8-SOP Advance (5x5) Grade: Automotive Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Vgs (Max): +10V, -20V Drain to Source Voltage (Vdss): 40 V Gate Charge (Qg) (Max) @ Vgs: 160 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 5640 pF @ 10 V Qualification: AEC-Q101 |
на замовлення 10000 шт: термін постачання 21-31 дні (днів) |
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XPH4R714MC,L1XHQ | Toshiba Semiconductor and Storage |
Description: MOSFET P-CH 40V 60A 8SOPPackaging: Cut Tape (CT) Package / Case: 8-PowerVDFN Mounting Type: Surface Mount Operating Temperature: 175°C Technology: MOSFET (Metal Oxide) FET Type: P-Channel Current - Continuous Drain (Id) @ 25°C: 60A (Ta) Rds On (Max) @ Id, Vgs: 4.7mOhm @ 30A, 10V Power Dissipation (Max): 960mW (Ta), 132W (Tc) Vgs(th) (Max) @ Id: 2.1V @ 1mA Supplier Device Package: 8-SOP Advance (5x5) Grade: Automotive Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Vgs (Max): +10V, -20V Drain to Source Voltage (Vdss): 40 V Gate Charge (Qg) (Max) @ Vgs: 160 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 5640 pF @ 10 V Qualification: AEC-Q101 |
на замовлення 11398 шт: термін постачання 21-31 дні (днів) |
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XPH4R10ANB,L1XHQ | Toshiba Semiconductor and Storage |
Description: MOSFET N-CH 100V 70A 8SOPPackaging: Tape & Reel (TR) Package / Case: 8-PowerVDFN Mounting Type: Surface Mount Operating Temperature: 175°C Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 70A (Ta) Rds On (Max) @ Id, Vgs: 4.1mOhm @ 35A, 10V Power Dissipation (Max): 960mW (Ta), 170W (Tc) Vgs(th) (Max) @ Id: 3.5V @ 1mA Supplier Device Package: 8-SOP Advance (5x5) Grade: Automotive Drive Voltage (Max Rds On, Min Rds On): 6V, 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 100 V Gate Charge (Qg) (Max) @ Vgs: 75 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 4970 pF @ 10 V Qualification: AEC-Q101 |
на замовлення 30000 шт: термін постачання 21-31 дні (днів) |
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XPH4R10ANB,L1XHQ | Toshiba Semiconductor and Storage |
Description: MOSFET N-CH 100V 70A 8SOPPackaging: Cut Tape (CT) Package / Case: 8-PowerVDFN Mounting Type: Surface Mount Operating Temperature: 175°C Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 70A (Ta) Rds On (Max) @ Id, Vgs: 4.1mOhm @ 35A, 10V Power Dissipation (Max): 960mW (Ta), 170W (Tc) Vgs(th) (Max) @ Id: 3.5V @ 1mA Supplier Device Package: 8-SOP Advance (5x5) Grade: Automotive Drive Voltage (Max Rds On, Min Rds On): 6V, 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 100 V Gate Charge (Qg) (Max) @ Vgs: 75 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 4970 pF @ 10 V Qualification: AEC-Q101 |
на замовлення 33237 шт: термін постачання 21-31 дні (днів) |
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DF2B7AE,H3F | Toshiba Semiconductor and Storage |
Description: TVS DIODE 5.5VWM 20VC ESCPackaging: Tape & Reel (TR) Package / Case: SC-79, SOD-523 Mounting Type: Surface Mount Type: Zener Operating Temperature: 150°C (TJ) Capacitance @ Frequency: 8.5pF @ 1MHz Current - Peak Pulse (10/1000µs): 4A (8/20µs) Voltage - Reverse Standoff (Typ): 5.5V (Max) Supplier Device Package: ESC Bidirectional Channels: 1 Voltage - Breakdown (Min): 5.8V Voltage - Clamping (Max) @ Ipp: 20V Power - Peak Pulse: 80W Power Line Protection: No |
на замовлення 76000 шт: термін постачання 21-31 дні (днів) |
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DF2B7AE,H3F | Toshiba Semiconductor and Storage |
Description: TVS DIODE 5.5VWM 20VC ESCPackaging: Cut Tape (CT) Package / Case: SC-79, SOD-523 Mounting Type: Surface Mount Type: Zener Operating Temperature: 150°C (TJ) Capacitance @ Frequency: 8.5pF @ 1MHz Current - Peak Pulse (10/1000µs): 4A (8/20µs) Voltage - Reverse Standoff (Typ): 5.5V (Max) Supplier Device Package: ESC Bidirectional Channels: 1 Voltage - Breakdown (Min): 5.8V Voltage - Clamping (Max) @ Ipp: 20V Power - Peak Pulse: 80W Power Line Protection: No |
на замовлення 81499 шт: термін постачання 21-31 дні (днів) |
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TK1K7A60F,S4X | Toshiba Semiconductor and Storage |
Description: X35 PB-F POWER MOSFET TRANSISTORPackaging: Tube Package / Case: TO-220-3 Full Pack Mounting Type: Through Hole Operating Temperature: 150°C Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 4A (Ta) Rds On (Max) @ Id, Vgs: 1.7Ohm @ 2A, 10V Power Dissipation (Max): 35W (Tc) Vgs(th) (Max) @ Id: 4V @ 460µA Supplier Device Package: TO-220SIS Part Status: Active Drive Voltage (Max Rds On, Min Rds On): 10V Vgs (Max): ±30V Drain to Source Voltage (Vdss): 600 V Gate Charge (Qg) (Max) @ Vgs: 16 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 560 pF @ 300 V |
на замовлення 1 шт: термін постачання 21-31 дні (днів) |
В кошику од. на суму грн. | ||||||||||||||||||
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TCR3RM10A,LF | Toshiba Semiconductor and Storage |
Description: IC REG LINEAR 1V 300MA 4DFNCOperating Temperature: -40°C ~ 85°C Current - Output: 300mA Mounting Type: Surface Mount Output Type: Fixed Package / Case: 4-XDFN Exposed Pad Packaging: Tape & Reel (TR) Protection Features: Over Current, Over Temperature Voltage Dropout (Max): 0.13V @ 300mA PSRR: 100dB (1kHz) Part Status: Obsolete Voltage - Output (Min/Fixed): 1V Supplier Device Package: 4-DFNC (1x1) Number of Regulators: 1 Voltage - Input (Max): 5.5V Output Configuration: Positive |
товару немає в наявності |
В кошику од. на суму грн. |
| 2SK208-R(TE85L,F) |
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Виробник: Toshiba Semiconductor and Storage
Description: JFET N-CH 50V 6.5MA SMINI
Packaging: Tape & Reel (TR)
Package / Case: TO-236-3, SC-59, SOT-23-3
Mounting Type: Surface Mount
Operating Temperature: 125°C (TJ)
FET Type: N-Channel
Input Capacitance (Ciss) (Max) @ Vds: 8.2pF @ 10V
Voltage - Breakdown (V(BR)GSS): 50 V
Current Drain (Id) - Max: 6.5 mA
Supplier Device Package: S-Mini
Part Status: Active
Power - Max: 100 mW
Voltage - Cutoff (VGS off) @ Id: 400 mV @ 100 nA
Current - Drain (Idss) @ Vds (Vgs=0): 300 µA @ 10 V
Description: JFET N-CH 50V 6.5MA SMINI
Packaging: Tape & Reel (TR)
Package / Case: TO-236-3, SC-59, SOT-23-3
Mounting Type: Surface Mount
Operating Temperature: 125°C (TJ)
FET Type: N-Channel
Input Capacitance (Ciss) (Max) @ Vds: 8.2pF @ 10V
Voltage - Breakdown (V(BR)GSS): 50 V
Current Drain (Id) - Max: 6.5 mA
Supplier Device Package: S-Mini
Part Status: Active
Power - Max: 100 mW
Voltage - Cutoff (VGS off) @ Id: 400 mV @ 100 nA
Current - Drain (Idss) @ Vds (Vgs=0): 300 µA @ 10 V
на замовлення 9000 шт:
термін постачання 21-31 дні (днів)
| Кількість | Ціна |
|---|---|
| 3000+ | 10.03 грн |
| 6000+ | 8.83 грн |
| 9000+ | 8.40 грн |
| 2SK208-R(TE85L,F) |
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Виробник: Toshiba Semiconductor and Storage
Description: JFET N-CH 50V 6.5MA SMINI
Packaging: Cut Tape (CT)
Package / Case: TO-236-3, SC-59, SOT-23-3
Mounting Type: Surface Mount
Operating Temperature: 125°C (TJ)
FET Type: N-Channel
Input Capacitance (Ciss) (Max) @ Vds: 8.2pF @ 10V
Voltage - Breakdown (V(BR)GSS): 50 V
Current Drain (Id) - Max: 6.5 mA
Supplier Device Package: S-Mini
Part Status: Active
Power - Max: 100 mW
Voltage - Cutoff (VGS off) @ Id: 400 mV @ 100 nA
Current - Drain (Idss) @ Vds (Vgs=0): 300 µA @ 10 V
Description: JFET N-CH 50V 6.5MA SMINI
Packaging: Cut Tape (CT)
Package / Case: TO-236-3, SC-59, SOT-23-3
Mounting Type: Surface Mount
Operating Temperature: 125°C (TJ)
FET Type: N-Channel
Input Capacitance (Ciss) (Max) @ Vds: 8.2pF @ 10V
Voltage - Breakdown (V(BR)GSS): 50 V
Current Drain (Id) - Max: 6.5 mA
Supplier Device Package: S-Mini
Part Status: Active
Power - Max: 100 mW
Voltage - Cutoff (VGS off) @ Id: 400 mV @ 100 nA
Current - Drain (Idss) @ Vds (Vgs=0): 300 µA @ 10 V
на замовлення 15539 шт:
термін постачання 21-31 дні (днів)
| Кількість | Ціна |
|---|---|
| 8+ | 45.20 грн |
| 12+ | 26.80 грн |
| 100+ | 17.16 грн |
| 500+ | 12.21 грн |
| 1000+ | 10.95 грн |
| RN4989FE,LF(CT |
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Виробник: Toshiba Semiconductor and Storage
Description: TRANS PREBIAS 1NPN 1PNP 50V ES6
Packaging: Tape & Reel (TR)
Package / Case: SOT-563, SOT-666
Mounting Type: Surface Mount
Transistor Type: 1 NPN, 1 PNP - Pre-Biased (Dual)
Power - Max: 100mW
Current - Collector (Ic) (Max): 100mA
Voltage - Collector Emitter Breakdown (Max): 50V
Vce Saturation (Max) @ Ib, Ic: 300mV @ 250µA, 5mA
Current - Collector Cutoff (Max): 500nA
DC Current Gain (hFE) (Min) @ Ic, Vce: 70 @ 10mA, 5V
Frequency - Transition: 250MHz, 200MHz
Resistor - Base (R1): 47kOhms
Resistor - Emitter Base (R2): 22kOhms
Supplier Device Package: ES6
Description: TRANS PREBIAS 1NPN 1PNP 50V ES6
Packaging: Tape & Reel (TR)
Package / Case: SOT-563, SOT-666
Mounting Type: Surface Mount
Transistor Type: 1 NPN, 1 PNP - Pre-Biased (Dual)
Power - Max: 100mW
Current - Collector (Ic) (Max): 100mA
Voltage - Collector Emitter Breakdown (Max): 50V
Vce Saturation (Max) @ Ib, Ic: 300mV @ 250µA, 5mA
Current - Collector Cutoff (Max): 500nA
DC Current Gain (hFE) (Min) @ Ic, Vce: 70 @ 10mA, 5V
Frequency - Transition: 250MHz, 200MHz
Resistor - Base (R1): 47kOhms
Resistor - Emitter Base (R2): 22kOhms
Supplier Device Package: ES6
на замовлення 4000 шт:
термін постачання 21-31 дні (днів)
| Кількість | Ціна |
|---|---|
| 4000+ | 2.90 грн |
| RN4989FE,LF(CT |
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Виробник: Toshiba Semiconductor and Storage
Description: TRANS PREBIAS 1NPN 1PNP 50V ES6
Packaging: Cut Tape (CT)
Package / Case: SOT-563, SOT-666
Mounting Type: Surface Mount
Transistor Type: 1 NPN, 1 PNP - Pre-Biased (Dual)
Power - Max: 100mW
Current - Collector (Ic) (Max): 100mA
Voltage - Collector Emitter Breakdown (Max): 50V
Vce Saturation (Max) @ Ib, Ic: 300mV @ 250µA, 5mA
Current - Collector Cutoff (Max): 500nA
DC Current Gain (hFE) (Min) @ Ic, Vce: 70 @ 10mA, 5V
Frequency - Transition: 250MHz, 200MHz
Resistor - Base (R1): 47kOhms
Resistor - Emitter Base (R2): 22kOhms
Supplier Device Package: ES6
Description: TRANS PREBIAS 1NPN 1PNP 50V ES6
Packaging: Cut Tape (CT)
Package / Case: SOT-563, SOT-666
Mounting Type: Surface Mount
Transistor Type: 1 NPN, 1 PNP - Pre-Biased (Dual)
Power - Max: 100mW
Current - Collector (Ic) (Max): 100mA
Voltage - Collector Emitter Breakdown (Max): 50V
Vce Saturation (Max) @ Ib, Ic: 300mV @ 250µA, 5mA
Current - Collector Cutoff (Max): 500nA
DC Current Gain (hFE) (Min) @ Ic, Vce: 70 @ 10mA, 5V
Frequency - Transition: 250MHz, 200MHz
Resistor - Base (R1): 47kOhms
Resistor - Emitter Base (R2): 22kOhms
Supplier Device Package: ES6
на замовлення 4000 шт:
термін постачання 21-31 дні (днів)
| Кількість | Ціна |
|---|---|
| 22+ | 15.07 грн |
| 35+ | 8.93 грн |
| 100+ | 5.51 грн |
| 500+ | 3.78 грн |
| 1000+ | 3.33 грн |
| 2000+ | 2.95 грн |
| TC74HC00AFELF |
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Виробник: Toshiba Semiconductor and Storage
Description: IC GATE NAND 4CH 2-INP 14SOP
Packaging: Tape & Reel (TR)
Package / Case: 14-SOIC (0.209", 5.30mm Width)
Mounting Type: Surface Mount
Logic Type: NAND Gate
Operating Temperature: -40°C ~ 85°C
Voltage - Supply: 2V ~ 6V
Current - Output High, Low: 5.2mA, 5.2mA
Number of Inputs: 2
Supplier Device Package: 14-SOP
Input Logic Level - High: 1.5V ~ 4.2V
Input Logic Level - Low: 0.5V ~ 1.8V
Max Propagation Delay @ V, Max CL: 13ns @ 6V, 50pF
Part Status: Not For New Designs
Number of Circuits: 4
Current - Quiescent (Max): 1 µA
Description: IC GATE NAND 4CH 2-INP 14SOP
Packaging: Tape & Reel (TR)
Package / Case: 14-SOIC (0.209", 5.30mm Width)
Mounting Type: Surface Mount
Logic Type: NAND Gate
Operating Temperature: -40°C ~ 85°C
Voltage - Supply: 2V ~ 6V
Current - Output High, Low: 5.2mA, 5.2mA
Number of Inputs: 2
Supplier Device Package: 14-SOP
Input Logic Level - High: 1.5V ~ 4.2V
Input Logic Level - Low: 0.5V ~ 1.8V
Max Propagation Delay @ V, Max CL: 13ns @ 6V, 50pF
Part Status: Not For New Designs
Number of Circuits: 4
Current - Quiescent (Max): 1 µA
товару немає в наявності
Мінімальне замовлення: 2000 шт
В кошику
од. на суму грн.
| TC78H653FTG,EL |
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Виробник: Toshiba Semiconductor and Storage
Description: IC MTR DRVR BIPOLR 1.8-7V 16VQON
Motor Type - AC, DC: Brushed DC
Motor Type - Stepper: Bipolar
Supplier Device Package: 16-VQFN (3x3)
Voltage - Load: 1.8V ~ 7V
Technology: DMOS
Applications: General Purpose
Voltage - Supply: 1.8V ~ 7V
Output Configuration: Half Bridge (4)
Operating Temperature: -40°C ~ 105°C
Current - Output: 4A
Function: Driver - Fully Integrated, Control and Power Stage
Mounting Type: Surface Mount
Package / Case: 16-VFQFN Exposed Pad
Packaging: Tape & Reel (TR)
Description: IC MTR DRVR BIPOLR 1.8-7V 16VQON
Motor Type - AC, DC: Brushed DC
Motor Type - Stepper: Bipolar
Supplier Device Package: 16-VQFN (3x3)
Voltage - Load: 1.8V ~ 7V
Technology: DMOS
Applications: General Purpose
Voltage - Supply: 1.8V ~ 7V
Output Configuration: Half Bridge (4)
Operating Temperature: -40°C ~ 105°C
Current - Output: 4A
Function: Driver - Fully Integrated, Control and Power Stage
Mounting Type: Surface Mount
Package / Case: 16-VFQFN Exposed Pad
Packaging: Tape & Reel (TR)
на замовлення 12000 шт:
термін постачання 21-31 дні (днів)
| Кількість | Ціна |
|---|---|
| 4000+ | 43.18 грн |
| 8000+ | 40.72 грн |
| 12000+ | 40.29 грн |
| TC78H653FTG,EL |
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Виробник: Toshiba Semiconductor and Storage
Description: IC MTR DRVR BIPOLR 1.8-7V 16VQON
Motor Type - AC, DC: Brushed DC
Motor Type - Stepper: Bipolar
Supplier Device Package: 16-VQFN (3x3)
Voltage - Load: 1.8V ~ 7V
Technology: DMOS
Applications: General Purpose
Voltage - Supply: 1.8V ~ 7V
Output Configuration: Half Bridge (4)
Operating Temperature: -40°C ~ 105°C
Current - Output: 4A
Function: Driver - Fully Integrated, Control and Power Stage
Mounting Type: Surface Mount
Package / Case: 16-VFQFN Exposed Pad
Packaging: Cut Tape (CT)
Description: IC MTR DRVR BIPOLR 1.8-7V 16VQON
Motor Type - AC, DC: Brushed DC
Motor Type - Stepper: Bipolar
Supplier Device Package: 16-VQFN (3x3)
Voltage - Load: 1.8V ~ 7V
Technology: DMOS
Applications: General Purpose
Voltage - Supply: 1.8V ~ 7V
Output Configuration: Half Bridge (4)
Operating Temperature: -40°C ~ 105°C
Current - Output: 4A
Function: Driver - Fully Integrated, Control and Power Stage
Mounting Type: Surface Mount
Package / Case: 16-VFQFN Exposed Pad
Packaging: Cut Tape (CT)
на замовлення 18628 шт:
термін постачання 21-31 дні (днів)
| Кількість | Ціна |
|---|---|
| 4+ | 89.60 грн |
| 10+ | 62.76 грн |
| 25+ | 56.90 грн |
| 100+ | 47.29 грн |
| 250+ | 44.38 грн |
| 500+ | 42.63 грн |
| 1000+ | 40.51 грн |
| SSM6K361NU,LF |
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Виробник: Toshiba Semiconductor and Storage
Description: MOSFET N-CH 100V 3.5A 6UDFNB
Drain to Source Voltage (Vdss): 100 V
Vgs (Max): ±20V
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Part Status: Active
Supplier Device Package: 6-UDFNB (2x2)
Vgs(th) (Max) @ Id: 2.5V @ 100µA
Power Dissipation (Max): 1.25W (Ta)
Rds On (Max) @ Id, Vgs: 69mOhm @ 2A, 10V
Current - Continuous Drain (Id) @ 25°C: 3.5A (Ta)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: 150°C
Mounting Type: Surface Mount
Package / Case: 6-WDFN Exposed Pad
Packaging: Tape & Reel (TR)
Input Capacitance (Ciss) (Max) @ Vds: 430 pF @ 15 V
Gate Charge (Qg) (Max) @ Vgs: 3.2 nC @ 4.5 V
Description: MOSFET N-CH 100V 3.5A 6UDFNB
Drain to Source Voltage (Vdss): 100 V
Vgs (Max): ±20V
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Part Status: Active
Supplier Device Package: 6-UDFNB (2x2)
Vgs(th) (Max) @ Id: 2.5V @ 100µA
Power Dissipation (Max): 1.25W (Ta)
Rds On (Max) @ Id, Vgs: 69mOhm @ 2A, 10V
Current - Continuous Drain (Id) @ 25°C: 3.5A (Ta)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: 150°C
Mounting Type: Surface Mount
Package / Case: 6-WDFN Exposed Pad
Packaging: Tape & Reel (TR)
Input Capacitance (Ciss) (Max) @ Vds: 430 pF @ 15 V
Gate Charge (Qg) (Max) @ Vgs: 3.2 nC @ 4.5 V
товару немає в наявності
Мінімальне замовлення: 3000 шт
В кошику
од. на суму грн.
| SSM6K361NU,LF |
![]() |
Виробник: Toshiba Semiconductor and Storage
Description: MOSFET N-CH 100V 3.5A 6UDFNB
Gate Charge (Qg) (Max) @ Vgs: 3.2 nC @ 4.5 V
Drain to Source Voltage (Vdss): 100 V
Vgs (Max): ±20V
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Part Status: Active
Supplier Device Package: 6-UDFNB (2x2)
Vgs(th) (Max) @ Id: 2.5V @ 100µA
Power Dissipation (Max): 1.25W (Ta)
Rds On (Max) @ Id, Vgs: 69mOhm @ 2A, 10V
Current - Continuous Drain (Id) @ 25°C: 3.5A (Ta)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: 150°C
Mounting Type: Surface Mount
Package / Case: 6-WDFN Exposed Pad
Packaging: Cut Tape (CT)
Input Capacitance (Ciss) (Max) @ Vds: 430 pF @ 15 V
Description: MOSFET N-CH 100V 3.5A 6UDFNB
Gate Charge (Qg) (Max) @ Vgs: 3.2 nC @ 4.5 V
Drain to Source Voltage (Vdss): 100 V
Vgs (Max): ±20V
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Part Status: Active
Supplier Device Package: 6-UDFNB (2x2)
Vgs(th) (Max) @ Id: 2.5V @ 100µA
Power Dissipation (Max): 1.25W (Ta)
Rds On (Max) @ Id, Vgs: 69mOhm @ 2A, 10V
Current - Continuous Drain (Id) @ 25°C: 3.5A (Ta)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: 150°C
Mounting Type: Surface Mount
Package / Case: 6-WDFN Exposed Pad
Packaging: Cut Tape (CT)
Input Capacitance (Ciss) (Max) @ Vds: 430 pF @ 15 V
на замовлення 2324 шт:
термін постачання 21-31 дні (днів)
| Кількість | Ціна |
|---|---|
| 7+ | 47.58 грн |
| 11+ | 28.48 грн |
| 100+ | 18.30 грн |
| 500+ | 13.05 грн |
| 1000+ | 11.71 грн |
| TLP3407SRH(TP,E |
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Виробник: Toshiba Semiconductor and Storage
Description: SSR RELAY SPST-NO 1A 0-60V
Packaging: Tape & Reel (TR)
Package / Case: 4-SMD (0.079", 2.00mm)
Output Type: AC, DC
Mounting Type: Surface Mount
Voltage - Input: 1.4VDC
Circuit: SPST-NO (1 Form A)
Operating Temperature: -40°C ~ 110°C
Termination Style: SMD (SMT) Tab
Load Current: 1 A
Relay Type: Photo-Coupled Relay (Photorelay)
Supplier Device Package: S-VSON4T (2x1.45)
Part Status: Active
Voltage - Load: 0 V ~ 60 V
On-State Resistance (Max): 300 mOhms
Description: SSR RELAY SPST-NO 1A 0-60V
Packaging: Tape & Reel (TR)
Package / Case: 4-SMD (0.079", 2.00mm)
Output Type: AC, DC
Mounting Type: Surface Mount
Voltage - Input: 1.4VDC
Circuit: SPST-NO (1 Form A)
Operating Temperature: -40°C ~ 110°C
Termination Style: SMD (SMT) Tab
Load Current: 1 A
Relay Type: Photo-Coupled Relay (Photorelay)
Supplier Device Package: S-VSON4T (2x1.45)
Part Status: Active
Voltage - Load: 0 V ~ 60 V
On-State Resistance (Max): 300 mOhms
товару немає в наявності
Мінімальне замовлення: 2500 шт
В кошику
од. на суму грн.
| TLP3407SRH(TP,E |
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Виробник: Toshiba Semiconductor and Storage
Description: SSR RELAY SPST-NO 1A 0-60V
Packaging: Cut Tape (CT)
Package / Case: 4-SMD (0.079", 2.00mm)
Output Type: AC, DC
Mounting Type: Surface Mount
Voltage - Input: 1.4VDC
Circuit: SPST-NO (1 Form A)
Operating Temperature: -40°C ~ 110°C
Termination Style: SMD (SMT) Tab
Load Current: 1 A
Relay Type: Photo-Coupled Relay (Photorelay)
Supplier Device Package: S-VSON4T (2x1.45)
Part Status: Active
Voltage - Load: 0 V ~ 60 V
On-State Resistance (Max): 300 mOhms
Description: SSR RELAY SPST-NO 1A 0-60V
Packaging: Cut Tape (CT)
Package / Case: 4-SMD (0.079", 2.00mm)
Output Type: AC, DC
Mounting Type: Surface Mount
Voltage - Input: 1.4VDC
Circuit: SPST-NO (1 Form A)
Operating Temperature: -40°C ~ 110°C
Termination Style: SMD (SMT) Tab
Load Current: 1 A
Relay Type: Photo-Coupled Relay (Photorelay)
Supplier Device Package: S-VSON4T (2x1.45)
Part Status: Active
Voltage - Load: 0 V ~ 60 V
On-State Resistance (Max): 300 mOhms
товару немає в наявності
В кошику
од. на суму грн.
| TLP3407SRL(TP,E |
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Виробник: Toshiba Semiconductor and Storage
Description: SSR RELAY SPST-NO 1A 0-60V
Packaging: Tape & Reel (TR)
Package / Case: 4-SMD (0.079", 2.00mm)
Output Type: AC, DC
Mounting Type: Surface Mount
Voltage - Input: 1.2VDC
Circuit: SPST-NO (1 Form A)
Operating Temperature: -40°C ~ 110°C
Termination Style: SMD (SMT) Tab
Load Current: 1 A
Relay Type: Photo-Coupled Relay (Photorelay)
Supplier Device Package: S-VSON4T (2x1.45)
Part Status: Active
Voltage - Load: 0 V ~ 60 V
On-State Resistance (Max): 300 mOhms
Description: SSR RELAY SPST-NO 1A 0-60V
Packaging: Tape & Reel (TR)
Package / Case: 4-SMD (0.079", 2.00mm)
Output Type: AC, DC
Mounting Type: Surface Mount
Voltage - Input: 1.2VDC
Circuit: SPST-NO (1 Form A)
Operating Temperature: -40°C ~ 110°C
Termination Style: SMD (SMT) Tab
Load Current: 1 A
Relay Type: Photo-Coupled Relay (Photorelay)
Supplier Device Package: S-VSON4T (2x1.45)
Part Status: Active
Voltage - Load: 0 V ~ 60 V
On-State Resistance (Max): 300 mOhms
товару немає в наявності
Мінімальне замовлення: 2500 шт
В кошику
од. на суму грн.
| TLP3407SRL(TP,E |
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Виробник: Toshiba Semiconductor and Storage
Description: SSR RELAY SPST-NO 1A 0-60V
Packaging: Cut Tape (CT)
Package / Case: 4-SMD (0.079", 2.00mm)
Output Type: AC, DC
Mounting Type: Surface Mount
Voltage - Input: 1.2VDC
Circuit: SPST-NO (1 Form A)
Operating Temperature: -40°C ~ 110°C
Termination Style: SMD (SMT) Tab
Load Current: 1 A
Relay Type: Photo-Coupled Relay (Photorelay)
Supplier Device Package: S-VSON4T (2x1.45)
Part Status: Active
Voltage - Load: 0 V ~ 60 V
On-State Resistance (Max): 300 mOhms
Description: SSR RELAY SPST-NO 1A 0-60V
Packaging: Cut Tape (CT)
Package / Case: 4-SMD (0.079", 2.00mm)
Output Type: AC, DC
Mounting Type: Surface Mount
Voltage - Input: 1.2VDC
Circuit: SPST-NO (1 Form A)
Operating Temperature: -40°C ~ 110°C
Termination Style: SMD (SMT) Tab
Load Current: 1 A
Relay Type: Photo-Coupled Relay (Photorelay)
Supplier Device Package: S-VSON4T (2x1.45)
Part Status: Active
Voltage - Load: 0 V ~ 60 V
On-State Resistance (Max): 300 mOhms
на замовлення 1364 шт:
термін постачання 21-31 дні (днів)
| Кількість | Ціна |
|---|---|
| 1+ | 418.67 грн |
| 10+ | 302.68 грн |
| 100+ | 243.55 грн |
| 500+ | 208.32 грн |
| TLP3407S(TP,E |
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Виробник: Toshiba Semiconductor and Storage
Description: SSR RELAY SPST-NO 1A 0-60V
Packaging: Tape & Reel (TR)
Package / Case: 4-SMD (0.079", 2.00mm)
Output Type: AC, DC
Mounting Type: Surface Mount
Voltage - Input: 1.26VDC
Circuit: SPST-NO (1 Form A)
Operating Temperature: -40°C ~ 110°C
Termination Style: SMD (SMT) Tab
Load Current: 1 A
Relay Type: Photo-Coupled Relay (Photorelay)
Supplier Device Package: 4-S-VSON
Part Status: Active
Voltage - Load: 0 V ~ 60 V
On-State Resistance (Max): 300 mOhms
Description: SSR RELAY SPST-NO 1A 0-60V
Packaging: Tape & Reel (TR)
Package / Case: 4-SMD (0.079", 2.00mm)
Output Type: AC, DC
Mounting Type: Surface Mount
Voltage - Input: 1.26VDC
Circuit: SPST-NO (1 Form A)
Operating Temperature: -40°C ~ 110°C
Termination Style: SMD (SMT) Tab
Load Current: 1 A
Relay Type: Photo-Coupled Relay (Photorelay)
Supplier Device Package: 4-S-VSON
Part Status: Active
Voltage - Load: 0 V ~ 60 V
On-State Resistance (Max): 300 mOhms
на замовлення 42500 шт:
термін постачання 21-31 дні (днів)
| Кількість | Ціна |
|---|---|
| 2500+ | 166.75 грн |
| TLP3407S(TP,E |
![]() |
Виробник: Toshiba Semiconductor and Storage
Description: SSR RELAY SPST-NO 1A 0-60V
On-State Resistance (Max): 300 mOhms
Voltage - Load: 0 V ~ 60 V
Part Status: Active
Supplier Device Package: 4-S-VSON
Load Current: 1 A
Termination Style: SMD (SMT) Tab
Circuit: SPST-NO (1 Form A)
Voltage - Input: 1.26VDC
Mounting Type: Surface Mount
Output Type: AC, DC
Relay Type: Photo-Coupled Relay (Photorelay)
Package / Case: 4-SMD (0.079", 2.00mm)
Packaging: Cut Tape (CT)
Operating Temperature: -40°C ~ 110°C
Description: SSR RELAY SPST-NO 1A 0-60V
On-State Resistance (Max): 300 mOhms
Voltage - Load: 0 V ~ 60 V
Part Status: Active
Supplier Device Package: 4-S-VSON
Load Current: 1 A
Termination Style: SMD (SMT) Tab
Circuit: SPST-NO (1 Form A)
Voltage - Input: 1.26VDC
Mounting Type: Surface Mount
Output Type: AC, DC
Relay Type: Photo-Coupled Relay (Photorelay)
Package / Case: 4-SMD (0.079", 2.00mm)
Packaging: Cut Tape (CT)
Operating Temperature: -40°C ~ 110°C
на замовлення 44343 шт:
термін постачання 21-31 дні (днів)
| Кількість | Ціна |
|---|---|
| 1+ | 344.92 грн |
| 10+ | 247.47 грн |
| 100+ | 197.38 грн |
| 500+ | 164.76 грн |
| TLP2372(TPL,E |
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Виробник: Toshiba Semiconductor and Storage
Description: OPTOISOLTR 3.75KV PUSH PULL 6-SO
Packaging: Tape & Reel (TR)
Package / Case: 6-SOIC (0.179", 4.55mm Width), 5 Leads
Output Type: Push-Pull, Totem Pole
Mounting Type: Surface Mount
Operating Temperature: -40°C ~ 125°C
Voltage - Supply: 2.2V ~ 5.5V
Voltage - Forward (Vf) (Typ): 1.53V
Data Rate: 20Mbps
Input Type: DC
Voltage - Isolation: 3750Vrms
Current - DC Forward (If) (Max): 8mA
Inputs - Side 1/Side 2: 1/0
Supplier Device Package: 6-SO, 5 Lead
Rise / Fall Time (Typ): 2.2ns, 1.6ns
Common Mode Transient Immunity (Min): 20kV/µs
Propagation Delay tpLH / tpHL (Max): 75ns, 75ns
Part Status: Active
Number of Channels: 1
Current - Output / Channel: 8 mA
Description: OPTOISOLTR 3.75KV PUSH PULL 6-SO
Packaging: Tape & Reel (TR)
Package / Case: 6-SOIC (0.179", 4.55mm Width), 5 Leads
Output Type: Push-Pull, Totem Pole
Mounting Type: Surface Mount
Operating Temperature: -40°C ~ 125°C
Voltage - Supply: 2.2V ~ 5.5V
Voltage - Forward (Vf) (Typ): 1.53V
Data Rate: 20Mbps
Input Type: DC
Voltage - Isolation: 3750Vrms
Current - DC Forward (If) (Max): 8mA
Inputs - Side 1/Side 2: 1/0
Supplier Device Package: 6-SO, 5 Lead
Rise / Fall Time (Typ): 2.2ns, 1.6ns
Common Mode Transient Immunity (Min): 20kV/µs
Propagation Delay tpLH / tpHL (Max): 75ns, 75ns
Part Status: Active
Number of Channels: 1
Current - Output / Channel: 8 mA
на замовлення 3000 шт:
термін постачання 21-31 дні (днів)
| Кількість | Ціна |
|---|---|
| 3000+ | 50.62 грн |
| TLP2372(TPL,E |
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Виробник: Toshiba Semiconductor and Storage
Description: OPTOISOLTR 3.75KV PUSH PULL 6-SO
Packaging: Cut Tape (CT)
Package / Case: 6-SOIC (0.179", 4.55mm Width), 5 Leads
Output Type: Push-Pull, Totem Pole
Mounting Type: Surface Mount
Operating Temperature: -40°C ~ 125°C
Voltage - Supply: 2.2V ~ 5.5V
Voltage - Forward (Vf) (Typ): 1.53V
Data Rate: 20Mbps
Input Type: DC
Voltage - Isolation: 3750Vrms
Current - DC Forward (If) (Max): 8mA
Inputs - Side 1/Side 2: 1/0
Supplier Device Package: 6-SO, 5 Lead
Rise / Fall Time (Typ): 2.2ns, 1.6ns
Common Mode Transient Immunity (Min): 20kV/µs
Propagation Delay tpLH / tpHL (Max): 75ns, 75ns
Part Status: Active
Number of Channels: 1
Current - Output / Channel: 8 mA
Description: OPTOISOLTR 3.75KV PUSH PULL 6-SO
Packaging: Cut Tape (CT)
Package / Case: 6-SOIC (0.179", 4.55mm Width), 5 Leads
Output Type: Push-Pull, Totem Pole
Mounting Type: Surface Mount
Operating Temperature: -40°C ~ 125°C
Voltage - Supply: 2.2V ~ 5.5V
Voltage - Forward (Vf) (Typ): 1.53V
Data Rate: 20Mbps
Input Type: DC
Voltage - Isolation: 3750Vrms
Current - DC Forward (If) (Max): 8mA
Inputs - Side 1/Side 2: 1/0
Supplier Device Package: 6-SO, 5 Lead
Rise / Fall Time (Typ): 2.2ns, 1.6ns
Common Mode Transient Immunity (Min): 20kV/µs
Propagation Delay tpLH / tpHL (Max): 75ns, 75ns
Part Status: Active
Number of Channels: 1
Current - Output / Channel: 8 mA
на замовлення 4489 шт:
термін постачання 21-31 дні (днів)
| Кількість | Ціна |
|---|---|
| 3+ | 124.49 грн |
| 10+ | 85.29 грн |
| 100+ | 64.67 грн |
| 500+ | 52.13 грн |
| 1000+ | 49.33 грн |
| TLP3553(F) |
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Виробник: Toshiba Semiconductor and Storage
Description: SSR RELAY SPST-NO 3A 0-20V
Packaging: Tube
Package / Case: 4-DIP (0.300", 7.62mm)
Output Type: AC, DC
Mounting Type: Through Hole
Voltage - Input: 1.33VDC
Circuit: SPST-NO (1 Form A)
Operating Temperature: -40°C ~ 85°C
Termination Style: PC Pin
Load Current: 3 A
Approval Agency: CSA, cUL, UL
Relay Type: Photo-Coupled Relay (Photorelay)
Supplier Device Package: 4-DIP
Part Status: Active
Voltage - Load: 0 V ~ 20 V
On-State Resistance (Max): 80 mOhms
Description: SSR RELAY SPST-NO 3A 0-20V
Packaging: Tube
Package / Case: 4-DIP (0.300", 7.62mm)
Output Type: AC, DC
Mounting Type: Through Hole
Voltage - Input: 1.33VDC
Circuit: SPST-NO (1 Form A)
Operating Temperature: -40°C ~ 85°C
Termination Style: PC Pin
Load Current: 3 A
Approval Agency: CSA, cUL, UL
Relay Type: Photo-Coupled Relay (Photorelay)
Supplier Device Package: 4-DIP
Part Status: Active
Voltage - Load: 0 V ~ 20 V
On-State Resistance (Max): 80 mOhms
на замовлення 88 шт:
термін постачання 21-31 дні (днів)
| Кількість | Ціна |
|---|---|
| 2+ | 210.13 грн |
| 10+ | 180.35 грн |
| 25+ | 172.26 грн |
| 50+ | 156.11 грн |
| TPH1R306P1,L1Q |
![]() |
Виробник: Toshiba Semiconductor and Storage
Description: MOSFET N-CH 60V 100A 8SOP
Vgs(th) (Max) @ Id: 2.5V @ 1mA
Power Dissipation (Max): 960mW (Ta), 170W (Tc)
Rds On (Max) @ Id, Vgs: 1.28mOhm @ 50A, 10V
Current - Continuous Drain (Id) @ 25°C: 100A (Tc)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: 175°C
Mounting Type: Surface Mount
Package / Case: 8-PowerVDFN
Packaging: Tape & Reel (TR)
Input Capacitance (Ciss) (Max) @ Vds: 8100 pF @ 30 V
Gate Charge (Qg) (Max) @ Vgs: 91 nC @ 10 V
Drain to Source Voltage (Vdss): 60 V
Vgs (Max): ±20V
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Supplier Device Package: 8-SOP Advance (5x5)
Description: MOSFET N-CH 60V 100A 8SOP
Vgs(th) (Max) @ Id: 2.5V @ 1mA
Power Dissipation (Max): 960mW (Ta), 170W (Tc)
Rds On (Max) @ Id, Vgs: 1.28mOhm @ 50A, 10V
Current - Continuous Drain (Id) @ 25°C: 100A (Tc)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: 175°C
Mounting Type: Surface Mount
Package / Case: 8-PowerVDFN
Packaging: Tape & Reel (TR)
Input Capacitance (Ciss) (Max) @ Vds: 8100 pF @ 30 V
Gate Charge (Qg) (Max) @ Vgs: 91 nC @ 10 V
Drain to Source Voltage (Vdss): 60 V
Vgs (Max): ±20V
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Supplier Device Package: 8-SOP Advance (5x5)
на замовлення 5000 шт:
термін постачання 21-31 дні (днів)
| Кількість | Ціна |
|---|---|
| 5000+ | 68.74 грн |
| TPH1R306P1,L1Q |
![]() |
Виробник: Toshiba Semiconductor and Storage
Description: MOSFET N-CH 60V 100A 8SOP
Input Capacitance (Ciss) (Max) @ Vds: 8100 pF @ 30 V
Gate Charge (Qg) (Max) @ Vgs: 91 nC @ 10 V
Drain to Source Voltage (Vdss): 60 V
Vgs (Max): ±20V
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Supplier Device Package: 8-SOP Advance (5x5)
Vgs(th) (Max) @ Id: 2.5V @ 1mA
Power Dissipation (Max): 960mW (Ta), 170W (Tc)
Rds On (Max) @ Id, Vgs: 1.28mOhm @ 50A, 10V
Current - Continuous Drain (Id) @ 25°C: 100A (Tc)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: 175°C
Mounting Type: Surface Mount
Package / Case: 8-PowerVDFN
Packaging: Cut Tape (CT)
Description: MOSFET N-CH 60V 100A 8SOP
Input Capacitance (Ciss) (Max) @ Vds: 8100 pF @ 30 V
Gate Charge (Qg) (Max) @ Vgs: 91 nC @ 10 V
Drain to Source Voltage (Vdss): 60 V
Vgs (Max): ±20V
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Supplier Device Package: 8-SOP Advance (5x5)
Vgs(th) (Max) @ Id: 2.5V @ 1mA
Power Dissipation (Max): 960mW (Ta), 170W (Tc)
Rds On (Max) @ Id, Vgs: 1.28mOhm @ 50A, 10V
Current - Continuous Drain (Id) @ 25°C: 100A (Tc)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: 175°C
Mounting Type: Surface Mount
Package / Case: 8-PowerVDFN
Packaging: Cut Tape (CT)
на замовлення 9539 шт:
термін постачання 21-31 дні (днів)
| Кількість | Ціна |
|---|---|
| 2+ | 219.64 грн |
| 10+ | 137.59 грн |
| 100+ | 95.45 грн |
| 500+ | 76.04 грн |
| TLP2631(LF5,F) |
![]() |
Виробник: Toshiba Semiconductor and Storage
Description: OPTOISO 2.5KV 2CH OPN COLL 8-SMD
Inputs - Side 1/Side 2: 2/0
Current - DC Forward (If) (Max): 20mA
Voltage - Isolation: 2500Vrms
Input Type: DC
Data Rate: 10MBd
Voltage - Forward (Vf) (Typ): 1.65V
Voltage - Supply: 4.5V ~ 5.5V
Operating Temperature: -40°C ~ 85°C
Mounting Type: Surface Mount
Output Type: Open Collector, Schottky Clamped
Package / Case: 8-SMD, Gull Wing
Packaging: Tube
Current - Output / Channel: 16 mA
Number of Channels: 2
Propagation Delay tpLH / tpHL (Max): 75ns, 75ns
Common Mode Transient Immunity (Min): 1kV/µs
Rise / Fall Time (Typ): 30ns, 30ns
Supplier Device Package: 8-SMD
Description: OPTOISO 2.5KV 2CH OPN COLL 8-SMD
Inputs - Side 1/Side 2: 2/0
Current - DC Forward (If) (Max): 20mA
Voltage - Isolation: 2500Vrms
Input Type: DC
Data Rate: 10MBd
Voltage - Forward (Vf) (Typ): 1.65V
Voltage - Supply: 4.5V ~ 5.5V
Operating Temperature: -40°C ~ 85°C
Mounting Type: Surface Mount
Output Type: Open Collector, Schottky Clamped
Package / Case: 8-SMD, Gull Wing
Packaging: Tube
Current - Output / Channel: 16 mA
Number of Channels: 2
Propagation Delay tpLH / tpHL (Max): 75ns, 75ns
Common Mode Transient Immunity (Min): 1kV/µs
Rise / Fall Time (Typ): 30ns, 30ns
Supplier Device Package: 8-SMD
товару немає в наявності
В кошику
од. на суму грн.
| 7UL1G86FU,LF |
![]() |
Виробник: Toshiba Semiconductor and Storage
Description: IC GATE XOR 1CH 2-INP 5SSOP
Input Logic Level - Low: 0.1V ~ 0.4V
Input Logic Level - High: 0.75V ~ 2.48V
Supplier Device Package: 5-SSOP
Number of Inputs: 2
Current - Output High, Low: 8mA, 8mA
Voltage - Supply: 0.9V ~ 3.6V
Operating Temperature: -40°C ~ 85°C
Logic Type: XOR (Exclusive OR)
Mounting Type: Surface Mount
Package / Case: 5-TSSOP, SC-70-5, SOT-353
Packaging: Tape & Reel (TR)
Current - Quiescent (Max): 1 µA
Number of Circuits: 1
Max Propagation Delay @ V, Max CL: 4.4ns @ 3.3V, 30pF
Description: IC GATE XOR 1CH 2-INP 5SSOP
Input Logic Level - Low: 0.1V ~ 0.4V
Input Logic Level - High: 0.75V ~ 2.48V
Supplier Device Package: 5-SSOP
Number of Inputs: 2
Current - Output High, Low: 8mA, 8mA
Voltage - Supply: 0.9V ~ 3.6V
Operating Temperature: -40°C ~ 85°C
Logic Type: XOR (Exclusive OR)
Mounting Type: Surface Mount
Package / Case: 5-TSSOP, SC-70-5, SOT-353
Packaging: Tape & Reel (TR)
Current - Quiescent (Max): 1 µA
Number of Circuits: 1
Max Propagation Delay @ V, Max CL: 4.4ns @ 3.3V, 30pF
товару немає в наявності
Мінімальне замовлення: 3000 шт
В кошику
од. на суму грн.
| 7UL1G86FU,LF |
![]() |
Виробник: Toshiba Semiconductor and Storage
Description: IC GATE XOR 1CH 2-INP 5SSOP
Packaging: Cut Tape (CT)
Package / Case: 5-TSSOP, SC-70-5, SOT-353
Mounting Type: Surface Mount
Logic Type: XOR (Exclusive OR)
Operating Temperature: -40°C ~ 85°C
Voltage - Supply: 0.9V ~ 3.6V
Current - Output High, Low: 8mA, 8mA
Number of Inputs: 2
Supplier Device Package: 5-SSOP
Input Logic Level - High: 0.75V ~ 2.48V
Input Logic Level - Low: 0.1V ~ 0.4V
Max Propagation Delay @ V, Max CL: 4.4ns @ 3.3V, 30pF
Number of Circuits: 1
Current - Quiescent (Max): 1 µA
Description: IC GATE XOR 1CH 2-INP 5SSOP
Packaging: Cut Tape (CT)
Package / Case: 5-TSSOP, SC-70-5, SOT-353
Mounting Type: Surface Mount
Logic Type: XOR (Exclusive OR)
Operating Temperature: -40°C ~ 85°C
Voltage - Supply: 0.9V ~ 3.6V
Current - Output High, Low: 8mA, 8mA
Number of Inputs: 2
Supplier Device Package: 5-SSOP
Input Logic Level - High: 0.75V ~ 2.48V
Input Logic Level - Low: 0.1V ~ 0.4V
Max Propagation Delay @ V, Max CL: 4.4ns @ 3.3V, 30pF
Number of Circuits: 1
Current - Quiescent (Max): 1 µA
на замовлення 2774 шт:
термін постачання 21-31 дні (днів)
| Кількість | Ціна |
|---|---|
| 12+ | 27.75 грн |
| 20+ | 15.73 грн |
| 25+ | 12.83 грн |
| 100+ | 8.97 грн |
| 250+ | 7.46 грн |
| 500+ | 6.53 грн |
| 1000+ | 5.66 грн |
| 7UL1G02FU,LF |
![]() |
Виробник: Toshiba Semiconductor and Storage
Description: IC GATE NOR 1CH 2-INP 5SSOP
Packaging: Tape & Reel (TR)
Package / Case: 5-TSSOP, SC-70-5, SOT-353
Mounting Type: Surface Mount
Logic Type: NOR Gate
Operating Temperature: -40°C ~ 85°C
Voltage - Supply: 0.9V ~ 3.6V
Current - Output High, Low: 8mA, 8mA
Number of Inputs: 2
Supplier Device Package: 5-SSOP
Input Logic Level - High: 0.75V ~ 2.48V
Input Logic Level - Low: 0.1V ~ 0.4V
Max Propagation Delay @ V, Max CL: 4.4ns @ 3.3V, 30pF
Number of Circuits: 1
Current - Quiescent (Max): 1 µA
Description: IC GATE NOR 1CH 2-INP 5SSOP
Packaging: Tape & Reel (TR)
Package / Case: 5-TSSOP, SC-70-5, SOT-353
Mounting Type: Surface Mount
Logic Type: NOR Gate
Operating Temperature: -40°C ~ 85°C
Voltage - Supply: 0.9V ~ 3.6V
Current - Output High, Low: 8mA, 8mA
Number of Inputs: 2
Supplier Device Package: 5-SSOP
Input Logic Level - High: 0.75V ~ 2.48V
Input Logic Level - Low: 0.1V ~ 0.4V
Max Propagation Delay @ V, Max CL: 4.4ns @ 3.3V, 30pF
Number of Circuits: 1
Current - Quiescent (Max): 1 µA
товару немає в наявності
Мінімальне замовлення: 3000 шт
В кошику
од. на суму грн.
| 7UL1G02FU,LF |
![]() |
Виробник: Toshiba Semiconductor and Storage
Description: IC GATE NOR 1CH 2-INP 5SSOP
Packaging: Cut Tape (CT)
Package / Case: 5-TSSOP, SC-70-5, SOT-353
Mounting Type: Surface Mount
Logic Type: NOR Gate
Operating Temperature: -40°C ~ 85°C
Voltage - Supply: 0.9V ~ 3.6V
Current - Output High, Low: 8mA, 8mA
Number of Inputs: 2
Supplier Device Package: 5-SSOP
Input Logic Level - High: 0.75V ~ 2.48V
Input Logic Level - Low: 0.1V ~ 0.4V
Max Propagation Delay @ V, Max CL: 4.4ns @ 3.3V, 30pF
Number of Circuits: 1
Current - Quiescent (Max): 1 µA
Description: IC GATE NOR 1CH 2-INP 5SSOP
Packaging: Cut Tape (CT)
Package / Case: 5-TSSOP, SC-70-5, SOT-353
Mounting Type: Surface Mount
Logic Type: NOR Gate
Operating Temperature: -40°C ~ 85°C
Voltage - Supply: 0.9V ~ 3.6V
Current - Output High, Low: 8mA, 8mA
Number of Inputs: 2
Supplier Device Package: 5-SSOP
Input Logic Level - High: 0.75V ~ 2.48V
Input Logic Level - Low: 0.1V ~ 0.4V
Max Propagation Delay @ V, Max CL: 4.4ns @ 3.3V, 30pF
Number of Circuits: 1
Current - Quiescent (Max): 1 µA
на замовлення 4940 шт:
термін постачання 21-31 дні (днів)
| Кількість | Ціна |
|---|---|
| 12+ | 27.75 грн |
| 20+ | 15.65 грн |
| 25+ | 12.77 грн |
| 100+ | 8.91 грн |
| 250+ | 7.42 грн |
| 500+ | 6.49 грн |
| 1000+ | 5.62 грн |
| 7UL1G08FU,LF |
Виробник: Toshiba Semiconductor and Storage
Description: IC GATE AND 1CH 2-INP 5SSOP
Packaging: Tape & Reel (TR)
Package / Case: 5-TSSOP, SC-70-5, SOT-353
Mounting Type: Surface Mount
Logic Type: AND Gate
Operating Temperature: -40°C ~ 85°C
Voltage - Supply: 0.9V ~ 3.6V
Current - Output High, Low: 8mA, 8mA
Number of Inputs: 2
Supplier Device Package: 5-SSOP
Input Logic Level - High: 0.75V ~ 2.48V
Input Logic Level - Low: 0.1V ~ 0.4V
Max Propagation Delay @ V, Max CL: 4.4ns @ 3.3V, 30pF
Part Status: Active
Number of Circuits: 1
Current - Quiescent (Max): 1 µA
Description: IC GATE AND 1CH 2-INP 5SSOP
Packaging: Tape & Reel (TR)
Package / Case: 5-TSSOP, SC-70-5, SOT-353
Mounting Type: Surface Mount
Logic Type: AND Gate
Operating Temperature: -40°C ~ 85°C
Voltage - Supply: 0.9V ~ 3.6V
Current - Output High, Low: 8mA, 8mA
Number of Inputs: 2
Supplier Device Package: 5-SSOP
Input Logic Level - High: 0.75V ~ 2.48V
Input Logic Level - Low: 0.1V ~ 0.4V
Max Propagation Delay @ V, Max CL: 4.4ns @ 3.3V, 30pF
Part Status: Active
Number of Circuits: 1
Current - Quiescent (Max): 1 µA
на замовлення 3000 шт:
термін постачання 21-31 дні (днів)
| Кількість | Ціна |
|---|---|
| 3000+ | 4.98 грн |
| 7UL1G08FU,LF |
Виробник: Toshiba Semiconductor and Storage
Description: IC GATE AND 1CH 2-INP 5SSOP
Packaging: Cut Tape (CT)
Package / Case: 5-TSSOP, SC-70-5, SOT-353
Mounting Type: Surface Mount
Logic Type: AND Gate
Operating Temperature: -40°C ~ 85°C
Voltage - Supply: 0.9V ~ 3.6V
Current - Output High, Low: 8mA, 8mA
Number of Inputs: 2
Supplier Device Package: 5-SSOP
Input Logic Level - High: 0.75V ~ 2.48V
Input Logic Level - Low: 0.1V ~ 0.4V
Max Propagation Delay @ V, Max CL: 4.4ns @ 3.3V, 30pF
Part Status: Active
Number of Circuits: 1
Current - Quiescent (Max): 1 µA
Description: IC GATE AND 1CH 2-INP 5SSOP
Packaging: Cut Tape (CT)
Package / Case: 5-TSSOP, SC-70-5, SOT-353
Mounting Type: Surface Mount
Logic Type: AND Gate
Operating Temperature: -40°C ~ 85°C
Voltage - Supply: 0.9V ~ 3.6V
Current - Output High, Low: 8mA, 8mA
Number of Inputs: 2
Supplier Device Package: 5-SSOP
Input Logic Level - High: 0.75V ~ 2.48V
Input Logic Level - Low: 0.1V ~ 0.4V
Max Propagation Delay @ V, Max CL: 4.4ns @ 3.3V, 30pF
Part Status: Active
Number of Circuits: 1
Current - Quiescent (Max): 1 µA
на замовлення 3385 шт:
термін постачання 21-31 дні (днів)
| Кількість | Ціна |
|---|---|
| 12+ | 26.96 грн |
| 16+ | 19.17 грн |
| 25+ | 16.77 грн |
| 100+ | 10.19 грн |
| 250+ | 8.43 грн |
| 500+ | 6.75 грн |
| 1000+ | 5.09 грн |
| 7UL1G32FU,LF |
Виробник: Toshiba Semiconductor and Storage
Description: IC GATE OR 1CH 2-INP 5SSOP
Packaging: Tape & Reel (TR)
Package / Case: 5-TSSOP, SC-70-5, SOT-353
Mounting Type: Surface Mount
Logic Type: OR Gate
Operating Temperature: -40°C ~ 85°C
Voltage - Supply: 0.9V ~ 3.6V
Current - Output High, Low: 8mA, 8mA
Number of Inputs: 2
Supplier Device Package: 5-SSOP
Input Logic Level - High: 0.75V ~ 2.48V
Input Logic Level - Low: 0.1V ~ 0.4V
Max Propagation Delay @ V, Max CL: 4.4ns @ 3.3V, 30pF
Part Status: Active
Number of Circuits: 1
Current - Quiescent (Max): 1 µA
Description: IC GATE OR 1CH 2-INP 5SSOP
Packaging: Tape & Reel (TR)
Package / Case: 5-TSSOP, SC-70-5, SOT-353
Mounting Type: Surface Mount
Logic Type: OR Gate
Operating Temperature: -40°C ~ 85°C
Voltage - Supply: 0.9V ~ 3.6V
Current - Output High, Low: 8mA, 8mA
Number of Inputs: 2
Supplier Device Package: 5-SSOP
Input Logic Level - High: 0.75V ~ 2.48V
Input Logic Level - Low: 0.1V ~ 0.4V
Max Propagation Delay @ V, Max CL: 4.4ns @ 3.3V, 30pF
Part Status: Active
Number of Circuits: 1
Current - Quiescent (Max): 1 µA
на замовлення 3000 шт:
термін постачання 21-31 дні (днів)
| Кількість | Ціна |
|---|---|
| 3000+ | 4.98 грн |
| 7UL1G32FU,LF |
Виробник: Toshiba Semiconductor and Storage
Description: IC GATE OR 1CH 2-INP 5SSOP
Packaging: Cut Tape (CT)
Package / Case: 5-TSSOP, SC-70-5, SOT-353
Mounting Type: Surface Mount
Logic Type: OR Gate
Operating Temperature: -40°C ~ 85°C
Voltage - Supply: 0.9V ~ 3.6V
Current - Output High, Low: 8mA, 8mA
Number of Inputs: 2
Supplier Device Package: 5-SSOP
Input Logic Level - High: 0.75V ~ 2.48V
Input Logic Level - Low: 0.1V ~ 0.4V
Max Propagation Delay @ V, Max CL: 4.4ns @ 3.3V, 30pF
Part Status: Active
Number of Circuits: 1
Current - Quiescent (Max): 1 µA
Description: IC GATE OR 1CH 2-INP 5SSOP
Packaging: Cut Tape (CT)
Package / Case: 5-TSSOP, SC-70-5, SOT-353
Mounting Type: Surface Mount
Logic Type: OR Gate
Operating Temperature: -40°C ~ 85°C
Voltage - Supply: 0.9V ~ 3.6V
Current - Output High, Low: 8mA, 8mA
Number of Inputs: 2
Supplier Device Package: 5-SSOP
Input Logic Level - High: 0.75V ~ 2.48V
Input Logic Level - Low: 0.1V ~ 0.4V
Max Propagation Delay @ V, Max CL: 4.4ns @ 3.3V, 30pF
Part Status: Active
Number of Circuits: 1
Current - Quiescent (Max): 1 µA
на замовлення 3410 шт:
термін постачання 21-31 дні (днів)
| Кількість | Ціна |
|---|---|
| 12+ | 26.96 грн |
| 16+ | 19.17 грн |
| 25+ | 16.77 грн |
| 100+ | 10.19 грн |
| 250+ | 8.43 грн |
| 500+ | 6.75 грн |
| 1000+ | 5.09 грн |
| 7UL1G04FU,LF |
Виробник: Toshiba Semiconductor and Storage
Description: IC INVERTER 1CH 1-INP 5SSOP
Packaging: Tape & Reel (TR)
Package / Case: 5-TSSOP, SC-70-5, SOT-353
Mounting Type: Surface Mount
Logic Type: Inverter
Operating Temperature: -40°C ~ 125°C
Voltage - Supply: 0.9V ~ 3.6V
Current - Output High, Low: 8mA, 8mA
Number of Inputs: 1
Supplier Device Package: 5-SSOP
Input Logic Level - High: 0.75V ~ 2.48V
Input Logic Level - Low: 0.1V ~ 0.4V
Max Propagation Delay @ V, Max CL: 4.4ns @ 3.3V, 30pF
Part Status: Active
Number of Circuits: 1
Current - Quiescent (Max): 1 µA
Description: IC INVERTER 1CH 1-INP 5SSOP
Packaging: Tape & Reel (TR)
Package / Case: 5-TSSOP, SC-70-5, SOT-353
Mounting Type: Surface Mount
Logic Type: Inverter
Operating Temperature: -40°C ~ 125°C
Voltage - Supply: 0.9V ~ 3.6V
Current - Output High, Low: 8mA, 8mA
Number of Inputs: 1
Supplier Device Package: 5-SSOP
Input Logic Level - High: 0.75V ~ 2.48V
Input Logic Level - Low: 0.1V ~ 0.4V
Max Propagation Delay @ V, Max CL: 4.4ns @ 3.3V, 30pF
Part Status: Active
Number of Circuits: 1
Current - Quiescent (Max): 1 µA
товару немає в наявності
Мінімальне замовлення: 3000 шт
В кошику
од. на суму грн.
| 7UL1G04FU,LF |
Виробник: Toshiba Semiconductor and Storage
Description: IC INVERTER 1CH 1-INP 5SSOP
Packaging: Cut Tape (CT)
Package / Case: 5-TSSOP, SC-70-5, SOT-353
Mounting Type: Surface Mount
Logic Type: Inverter
Operating Temperature: -40°C ~ 125°C
Voltage - Supply: 0.9V ~ 3.6V
Current - Output High, Low: 8mA, 8mA
Number of Inputs: 1
Supplier Device Package: 5-SSOP
Input Logic Level - High: 0.75V ~ 2.48V
Input Logic Level - Low: 0.1V ~ 0.4V
Max Propagation Delay @ V, Max CL: 4.4ns @ 3.3V, 30pF
Part Status: Active
Number of Circuits: 1
Current - Quiescent (Max): 1 µA
Description: IC INVERTER 1CH 1-INP 5SSOP
Packaging: Cut Tape (CT)
Package / Case: 5-TSSOP, SC-70-5, SOT-353
Mounting Type: Surface Mount
Logic Type: Inverter
Operating Temperature: -40°C ~ 125°C
Voltage - Supply: 0.9V ~ 3.6V
Current - Output High, Low: 8mA, 8mA
Number of Inputs: 1
Supplier Device Package: 5-SSOP
Input Logic Level - High: 0.75V ~ 2.48V
Input Logic Level - Low: 0.1V ~ 0.4V
Max Propagation Delay @ V, Max CL: 4.4ns @ 3.3V, 30pF
Part Status: Active
Number of Circuits: 1
Current - Quiescent (Max): 1 µA
на замовлення 2854 шт:
термін постачання 21-31 дні (днів)
| Кількість | Ціна |
|---|---|
| 10+ | 32.51 грн |
| 13+ | 23.67 грн |
| 25+ | 21.32 грн |
| 100+ | 13.82 грн |
| 250+ | 11.64 грн |
| 500+ | 9.46 грн |
| 1000+ | 7.16 грн |
| 7UL1G34FU,LF |
![]() |
Виробник: Toshiba Semiconductor and Storage
Description: IC BUFFER NON-INVERT 3.6V USV
Packaging: Tape & Reel (TR)
Package / Case: 5-TSSOP, SC-70-5, SOT-353
Mounting Type: Surface Mount
Number of Elements: 1
Logic Type: Buffer, Non-Inverting
Operating Temperature: -40°C ~ 85°C
Voltage - Supply: 0.9V ~ 3.6V
Number of Bits per Element: 1
Current - Output High, Low: 8mA, 8mA
Supplier Device Package: 5-SSOP
Description: IC BUFFER NON-INVERT 3.6V USV
Packaging: Tape & Reel (TR)
Package / Case: 5-TSSOP, SC-70-5, SOT-353
Mounting Type: Surface Mount
Number of Elements: 1
Logic Type: Buffer, Non-Inverting
Operating Temperature: -40°C ~ 85°C
Voltage - Supply: 0.9V ~ 3.6V
Number of Bits per Element: 1
Current - Output High, Low: 8mA, 8mA
Supplier Device Package: 5-SSOP
товару немає в наявності
Мінімальне замовлення: 3000 шт
В кошику
од. на суму грн.
| 7UL1G34FU,LF |
![]() |
Виробник: Toshiba Semiconductor and Storage
Description: IC BUFFER NON-INVERT 3.6V USV
Packaging: Cut Tape (CT)
Package / Case: 5-TSSOP, SC-70-5, SOT-353
Mounting Type: Surface Mount
Number of Elements: 1
Logic Type: Buffer, Non-Inverting
Operating Temperature: -40°C ~ 85°C
Voltage - Supply: 0.9V ~ 3.6V
Number of Bits per Element: 1
Current - Output High, Low: 8mA, 8mA
Supplier Device Package: 5-SSOP
Description: IC BUFFER NON-INVERT 3.6V USV
Packaging: Cut Tape (CT)
Package / Case: 5-TSSOP, SC-70-5, SOT-353
Mounting Type: Surface Mount
Number of Elements: 1
Logic Type: Buffer, Non-Inverting
Operating Temperature: -40°C ~ 85°C
Voltage - Supply: 0.9V ~ 3.6V
Number of Bits per Element: 1
Current - Output High, Low: 8mA, 8mA
Supplier Device Package: 5-SSOP
на замовлення 2900 шт:
термін постачання 21-31 дні (днів)
| Кількість | Ціна |
|---|---|
| 23+ | 14.27 грн |
| 33+ | 9.39 грн |
| 37+ | 8.31 грн |
| 100+ | 6.64 грн |
| 250+ | 6.09 грн |
| 500+ | 5.76 грн |
| 1000+ | 5.40 грн |
| 7UL1G04FS,LF |
![]() |
Виробник: Toshiba Semiconductor and Storage
Description: IC INVERTER 1CH 1-INP FSV
Packaging: Tape & Reel (TR)
Package / Case: SOT-953
Mounting Type: Surface Mount
Logic Type: Inverter
Operating Temperature: -40°C ~ 125°C
Voltage - Supply: 0.9V ~ 3.6V
Current - Output High, Low: 8mA, 8mA
Number of Inputs: 1
Supplier Device Package: fSV
Input Logic Level - High: 0.75V ~ 2.48V
Input Logic Level - Low: 0.1V ~ 0.4V
Max Propagation Delay @ V, Max CL: 4.4ns @ 3.3V, 30pF
Part Status: Active
Number of Circuits: 1
Current - Quiescent (Max): 1 µA
Description: IC INVERTER 1CH 1-INP FSV
Packaging: Tape & Reel (TR)
Package / Case: SOT-953
Mounting Type: Surface Mount
Logic Type: Inverter
Operating Temperature: -40°C ~ 125°C
Voltage - Supply: 0.9V ~ 3.6V
Current - Output High, Low: 8mA, 8mA
Number of Inputs: 1
Supplier Device Package: fSV
Input Logic Level - High: 0.75V ~ 2.48V
Input Logic Level - Low: 0.1V ~ 0.4V
Max Propagation Delay @ V, Max CL: 4.4ns @ 3.3V, 30pF
Part Status: Active
Number of Circuits: 1
Current - Quiescent (Max): 1 µA
товару немає в наявності
Мінімальне замовлення: 10000 шт
В кошику
од. на суму грн.
| 7UL1G04FS,LF |
![]() |
Виробник: Toshiba Semiconductor and Storage
Description: IC INVERTER 1CH 1-INP FSV
Packaging: Cut Tape (CT)
Package / Case: SOT-953
Mounting Type: Surface Mount
Logic Type: Inverter
Operating Temperature: -40°C ~ 125°C
Voltage - Supply: 0.9V ~ 3.6V
Current - Output High, Low: 8mA, 8mA
Number of Inputs: 1
Supplier Device Package: fSV
Input Logic Level - High: 0.75V ~ 2.48V
Input Logic Level - Low: 0.1V ~ 0.4V
Max Propagation Delay @ V, Max CL: 4.4ns @ 3.3V, 30pF
Part Status: Active
Number of Circuits: 1
Current - Quiescent (Max): 1 µA
Description: IC INVERTER 1CH 1-INP FSV
Packaging: Cut Tape (CT)
Package / Case: SOT-953
Mounting Type: Surface Mount
Logic Type: Inverter
Operating Temperature: -40°C ~ 125°C
Voltage - Supply: 0.9V ~ 3.6V
Current - Output High, Low: 8mA, 8mA
Number of Inputs: 1
Supplier Device Package: fSV
Input Logic Level - High: 0.75V ~ 2.48V
Input Logic Level - Low: 0.1V ~ 0.4V
Max Propagation Delay @ V, Max CL: 4.4ns @ 3.3V, 30pF
Part Status: Active
Number of Circuits: 1
Current - Quiescent (Max): 1 µA
на замовлення 9850 шт:
термін постачання 21-31 дні (днів)
| Кількість | Ціна |
|---|---|
| 10+ | 32.51 грн |
| 13+ | 23.67 грн |
| 25+ | 21.32 грн |
| 100+ | 13.82 грн |
| 250+ | 11.64 грн |
| 500+ | 9.46 грн |
| 1000+ | 7.16 грн |
| 2500+ | 6.44 грн |
| 5000+ | 6.08 грн |
| 7UL1G126FS,LF |
![]() |
Виробник: Toshiba Semiconductor and Storage
Description: IC BUFFER NON-INVERT 3.6V FSV
Packaging: Tape & Reel (TR)
Package / Case: SOT-953
Output Type: 3-State
Mounting Type: Surface Mount
Number of Elements: 1
Logic Type: Buffer, Non-Inverting
Operating Temperature: -40°C ~ 85°C
Voltage - Supply: 0.9V ~ 3.6V
Number of Bits per Element: 1
Current - Output High, Low: 8mA, 8mA
Supplier Device Package: fSV
Part Status: Active
Description: IC BUFFER NON-INVERT 3.6V FSV
Packaging: Tape & Reel (TR)
Package / Case: SOT-953
Output Type: 3-State
Mounting Type: Surface Mount
Number of Elements: 1
Logic Type: Buffer, Non-Inverting
Operating Temperature: -40°C ~ 85°C
Voltage - Supply: 0.9V ~ 3.6V
Number of Bits per Element: 1
Current - Output High, Low: 8mA, 8mA
Supplier Device Package: fSV
Part Status: Active
на замовлення 30000 шт:
термін постачання 21-31 дні (днів)
| Кількість | Ціна |
|---|---|
| 10000+ | 5.22 грн |
| 20000+ | 4.71 грн |
| 7UL1G126FS,LF |
![]() |
Виробник: Toshiba Semiconductor and Storage
Description: IC BUFFER NON-INVERT 3.6V FSV
Packaging: Cut Tape (CT)
Package / Case: SOT-953
Output Type: 3-State
Mounting Type: Surface Mount
Number of Elements: 1
Logic Type: Buffer, Non-Inverting
Operating Temperature: -40°C ~ 85°C
Voltage - Supply: 0.9V ~ 3.6V
Number of Bits per Element: 1
Current - Output High, Low: 8mA, 8mA
Supplier Device Package: fSV
Part Status: Active
Description: IC BUFFER NON-INVERT 3.6V FSV
Packaging: Cut Tape (CT)
Package / Case: SOT-953
Output Type: 3-State
Mounting Type: Surface Mount
Number of Elements: 1
Logic Type: Buffer, Non-Inverting
Operating Temperature: -40°C ~ 85°C
Voltage - Supply: 0.9V ~ 3.6V
Number of Bits per Element: 1
Current - Output High, Low: 8mA, 8mA
Supplier Device Package: fSV
Part Status: Active
на замовлення 36609 шт:
термін постачання 21-31 дні (днів)
| Кількість | Ціна |
|---|---|
| 9+ | 36.47 грн |
| 15+ | 20.85 грн |
| 25+ | 17.10 грн |
| 100+ | 12.08 грн |
| 250+ | 10.12 грн |
| 500+ | 8.91 грн |
| 1000+ | 7.76 грн |
| 2500+ | 6.68 грн |
| 5000+ | 6.02 грн |
| RN1112MFV,L3F |
![]() |
Виробник: Toshiba Semiconductor and Storage
Description: TRANS PREBIAS NPN 50V 0.1A VESM
Packaging: Tape & Reel (TR)
Package / Case: SOT-723
Mounting Type: Surface Mount
Transistor Type: NPN - Pre-Biased
Vce Saturation (Max) @ Ib, Ic: 300mV @ 500µA, 5mA
Current - Collector Cutoff (Max): 100nA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce: 120 @ 1mA, 5V
Supplier Device Package: VESM
Current - Collector (Ic) (Max): 100 mA
Voltage - Collector Emitter Breakdown (Max): 50 V
Power - Max: 150 mW
Resistor - Base (R1): 22 kOhms
Description: TRANS PREBIAS NPN 50V 0.1A VESM
Packaging: Tape & Reel (TR)
Package / Case: SOT-723
Mounting Type: Surface Mount
Transistor Type: NPN - Pre-Biased
Vce Saturation (Max) @ Ib, Ic: 300mV @ 500µA, 5mA
Current - Collector Cutoff (Max): 100nA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce: 120 @ 1mA, 5V
Supplier Device Package: VESM
Current - Collector (Ic) (Max): 100 mA
Voltage - Collector Emitter Breakdown (Max): 50 V
Power - Max: 150 mW
Resistor - Base (R1): 22 kOhms
на замовлення 8000 шт:
термін постачання 21-31 дні (днів)
| Кількість | Ціна |
|---|---|
| 8000+ | 1.63 грн |
| RN1112MFV,L3F |
![]() |
Виробник: Toshiba Semiconductor and Storage
Description: TRANS PREBIAS NPN 50V 0.1A VESM
Packaging: Cut Tape (CT)
Package / Case: SOT-723
Mounting Type: Surface Mount
Transistor Type: NPN - Pre-Biased
Vce Saturation (Max) @ Ib, Ic: 300mV @ 500µA, 5mA
Current - Collector Cutoff (Max): 100nA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce: 120 @ 1mA, 5V
Supplier Device Package: VESM
Current - Collector (Ic) (Max): 100 mA
Voltage - Collector Emitter Breakdown (Max): 50 V
Power - Max: 150 mW
Resistor - Base (R1): 22 kOhms
Description: TRANS PREBIAS NPN 50V 0.1A VESM
Packaging: Cut Tape (CT)
Package / Case: SOT-723
Mounting Type: Surface Mount
Transistor Type: NPN - Pre-Biased
Vce Saturation (Max) @ Ib, Ic: 300mV @ 500µA, 5mA
Current - Collector Cutoff (Max): 100nA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce: 120 @ 1mA, 5V
Supplier Device Package: VESM
Current - Collector (Ic) (Max): 100 mA
Voltage - Collector Emitter Breakdown (Max): 50 V
Power - Max: 150 mW
Resistor - Base (R1): 22 kOhms
на замовлення 8000 шт:
термін постачання 21-31 дні (днів)
| Кількість | Ціна |
|---|---|
| 45+ | 7.14 грн |
| 64+ | 4.81 грн |
| 100+ | 3.21 грн |
| 500+ | 2.28 грн |
| 1000+ | 2.04 грн |
| 2000+ | 1.82 грн |
| RN1113,LF(CT |
![]() |
Виробник: Toshiba Semiconductor and Storage
Description: TRANS PREBIAS NPN 50V 0.1A SSM
Description: TRANS PREBIAS NPN 50V 0.1A SSM
на замовлення 3000 шт:
термін постачання 21-31 дні (днів)
| RN1113,LF(CT |
![]() |
Виробник: Toshiba Semiconductor and Storage
Description: TRANS PREBIAS NPN 50V 0.1A SSM
Description: TRANS PREBIAS NPN 50V 0.1A SSM
на замовлення 3000 шт:
термін постачання 21-31 дні (днів)
| RN1112(TE85L,F) |
![]() |
Виробник: Toshiba Semiconductor and Storage
Description: TRANS PREBIAS NPN 50V 0.1A SSM
Description: TRANS PREBIAS NPN 50V 0.1A SSM
на замовлення 3000 шт:
термін постачання 21-31 дні (днів)
| RN1117(TE85L,F) |
![]() |
Виробник: Toshiba Semiconductor and Storage
Description: TRANS PREBIAS NPN 50V 0.1A SSM
Packaging: Tape & Reel (TR)
Package / Case: SC-75, SOT-416
Mounting Type: Surface Mount
Transistor Type: NPN - Pre-Biased
Vce Saturation (Max) @ Ib, Ic: 300mV @ 250µA, 5mA
Current - Collector Cutoff (Max): 500nA
DC Current Gain (hFE) (Min) @ Ic, Vce: 30 @ 10mA, 5V
Supplier Device Package: SSM
Part Status: Active
Current - Collector (Ic) (Max): 100 mA
Voltage - Collector Emitter Breakdown (Max): 50 V
Power - Max: 100 mW
Frequency - Transition: 250 MHz
Resistor - Base (R1): 10 kOhms
Resistor - Emitter Base (R2): 4.7 kOhms
Description: TRANS PREBIAS NPN 50V 0.1A SSM
Packaging: Tape & Reel (TR)
Package / Case: SC-75, SOT-416
Mounting Type: Surface Mount
Transistor Type: NPN - Pre-Biased
Vce Saturation (Max) @ Ib, Ic: 300mV @ 250µA, 5mA
Current - Collector Cutoff (Max): 500nA
DC Current Gain (hFE) (Min) @ Ic, Vce: 30 @ 10mA, 5V
Supplier Device Package: SSM
Part Status: Active
Current - Collector (Ic) (Max): 100 mA
Voltage - Collector Emitter Breakdown (Max): 50 V
Power - Max: 100 mW
Frequency - Transition: 250 MHz
Resistor - Base (R1): 10 kOhms
Resistor - Emitter Base (R2): 4.7 kOhms
товару немає в наявності
Мінімальне замовлення: 3000 шт
В кошику
од. на суму грн.
| RN1117(TE85L,F) |
![]() |
Виробник: Toshiba Semiconductor and Storage
Description: TRANS PREBIAS NPN 50V 0.1A SSM
Packaging: Cut Tape (CT)
Package / Case: SC-75, SOT-416
Mounting Type: Surface Mount
Transistor Type: NPN - Pre-Biased
Vce Saturation (Max) @ Ib, Ic: 300mV @ 250µA, 5mA
Current - Collector Cutoff (Max): 500nA
DC Current Gain (hFE) (Min) @ Ic, Vce: 30 @ 10mA, 5V
Supplier Device Package: SSM
Part Status: Active
Current - Collector (Ic) (Max): 100 mA
Voltage - Collector Emitter Breakdown (Max): 50 V
Power - Max: 100 mW
Frequency - Transition: 250 MHz
Resistor - Base (R1): 10 kOhms
Resistor - Emitter Base (R2): 4.7 kOhms
Description: TRANS PREBIAS NPN 50V 0.1A SSM
Packaging: Cut Tape (CT)
Package / Case: SC-75, SOT-416
Mounting Type: Surface Mount
Transistor Type: NPN - Pre-Biased
Vce Saturation (Max) @ Ib, Ic: 300mV @ 250µA, 5mA
Current - Collector Cutoff (Max): 500nA
DC Current Gain (hFE) (Min) @ Ic, Vce: 30 @ 10mA, 5V
Supplier Device Package: SSM
Part Status: Active
Current - Collector (Ic) (Max): 100 mA
Voltage - Collector Emitter Breakdown (Max): 50 V
Power - Max: 100 mW
Frequency - Transition: 250 MHz
Resistor - Base (R1): 10 kOhms
Resistor - Emitter Base (R2): 4.7 kOhms
на замовлення 898 шт:
термін постачання 21-31 дні (днів)
| Кількість | Ціна |
|---|---|
| 23+ | 14.27 грн |
| 34+ | 9.16 грн |
| 100+ | 6.17 грн |
| 500+ | 4.43 грн |
| RN1118(TE85L,F) |
![]() |
Виробник: Toshiba Semiconductor and Storage
Description: TRANS PREBIAS NPN 50V 0.1A SSM
Description: TRANS PREBIAS NPN 50V 0.1A SSM
товару немає в наявності
Мінімальне замовлення: 3000 шт
В кошику
од. на суму грн.
| RN1118(TE85L,F) |
![]() |
Виробник: Toshiba Semiconductor and Storage
Description: TRANS PREBIAS NPN 50V 0.1A SSM
Description: TRANS PREBIAS NPN 50V 0.1A SSM
на замовлення 2970 шт:
термін постачання 21-31 дні (днів)
| Кількість | Ціна |
|---|---|
| 11+ | 29.34 грн |
| 13+ | 23.52 грн |
| 100+ | 12.48 грн |
| 500+ | 7.71 грн |
| 1000+ | 5.24 грн |
| RN1115MFV,L3F |
![]() |
Виробник: Toshiba Semiconductor and Storage
Description: TRANS PREBIAS NPN 50V 0.1A VESM
Packaging: Tape & Reel (TR)
Package / Case: SOT-723
Mounting Type: Surface Mount
Transistor Type: NPN - Pre-Biased
Vce Saturation (Max) @ Ib, Ic: 300mV @ 250µA, 5mA
Current - Collector Cutoff (Max): 500nA
DC Current Gain (hFE) (Min) @ Ic, Vce: 50 @ 10mA, 5V
Supplier Device Package: VESM
Current - Collector (Ic) (Max): 100 mA
Voltage - Collector Emitter Breakdown (Max): 50 V
Power - Max: 150 mW
Frequency - Transition: 250 MHz
Resistor - Base (R1): 2.2 kOhms
Resistor - Emitter Base (R2): 10 kOhms
Resistors Included: R1 and R2
Description: TRANS PREBIAS NPN 50V 0.1A VESM
Packaging: Tape & Reel (TR)
Package / Case: SOT-723
Mounting Type: Surface Mount
Transistor Type: NPN - Pre-Biased
Vce Saturation (Max) @ Ib, Ic: 300mV @ 250µA, 5mA
Current - Collector Cutoff (Max): 500nA
DC Current Gain (hFE) (Min) @ Ic, Vce: 50 @ 10mA, 5V
Supplier Device Package: VESM
Current - Collector (Ic) (Max): 100 mA
Voltage - Collector Emitter Breakdown (Max): 50 V
Power - Max: 150 mW
Frequency - Transition: 250 MHz
Resistor - Base (R1): 2.2 kOhms
Resistor - Emitter Base (R2): 10 kOhms
Resistors Included: R1 and R2
товару немає в наявності
Мінімальне замовлення: 8000 шт
В кошику
од. на суму грн.
| RN1114,LF |
![]() |
Виробник: Toshiba Semiconductor and Storage
Description: TRANS PREBIAS NPN 50V 0.1A SSM
Packaging: Tape & Reel (TR)
Package / Case: SC-75, SOT-416
Mounting Type: Surface Mount
Transistor Type: NPN - Pre-Biased
Vce Saturation (Max) @ Ib, Ic: 300mV @ 250µA, 5mA
Current - Collector Cutoff (Max): 500nA
DC Current Gain (hFE) (Min) @ Ic, Vce: 50 @ 10mA, 5V
Supplier Device Package: SSM
Current - Collector (Ic) (Max): 100 mA
Voltage - Collector Emitter Breakdown (Max): 50 V
Power - Max: 100 mW
Frequency - Transition: 250 MHz
Resistor - Base (R1): 1 kOhms
Resistor - Emitter Base (R2): 10 kOhms
Resistors Included: R1 and R2
Description: TRANS PREBIAS NPN 50V 0.1A SSM
Packaging: Tape & Reel (TR)
Package / Case: SC-75, SOT-416
Mounting Type: Surface Mount
Transistor Type: NPN - Pre-Biased
Vce Saturation (Max) @ Ib, Ic: 300mV @ 250µA, 5mA
Current - Collector Cutoff (Max): 500nA
DC Current Gain (hFE) (Min) @ Ic, Vce: 50 @ 10mA, 5V
Supplier Device Package: SSM
Current - Collector (Ic) (Max): 100 mA
Voltage - Collector Emitter Breakdown (Max): 50 V
Power - Max: 100 mW
Frequency - Transition: 250 MHz
Resistor - Base (R1): 1 kOhms
Resistor - Emitter Base (R2): 10 kOhms
Resistors Included: R1 and R2
на замовлення 3000 шт:
термін постачання 21-31 дні (днів)
| Кількість | Ціна |
|---|---|
| 3000+ | 2.70 грн |
| RN1114,LF |
![]() |
Виробник: Toshiba Semiconductor and Storage
Description: TRANS PREBIAS NPN 50V 0.1A SSM
Packaging: Cut Tape (CT)
Package / Case: SC-75, SOT-416
Mounting Type: Surface Mount
Transistor Type: NPN - Pre-Biased
Vce Saturation (Max) @ Ib, Ic: 300mV @ 250µA, 5mA
Current - Collector Cutoff (Max): 500nA
DC Current Gain (hFE) (Min) @ Ic, Vce: 50 @ 10mA, 5V
Supplier Device Package: SSM
Current - Collector (Ic) (Max): 100 mA
Voltage - Collector Emitter Breakdown (Max): 50 V
Power - Max: 100 mW
Frequency - Transition: 250 MHz
Resistor - Base (R1): 1 kOhms
Resistor - Emitter Base (R2): 10 kOhms
Resistors Included: R1 and R2
Description: TRANS PREBIAS NPN 50V 0.1A SSM
Packaging: Cut Tape (CT)
Package / Case: SC-75, SOT-416
Mounting Type: Surface Mount
Transistor Type: NPN - Pre-Biased
Vce Saturation (Max) @ Ib, Ic: 300mV @ 250µA, 5mA
Current - Collector Cutoff (Max): 500nA
DC Current Gain (hFE) (Min) @ Ic, Vce: 50 @ 10mA, 5V
Supplier Device Package: SSM
Current - Collector (Ic) (Max): 100 mA
Voltage - Collector Emitter Breakdown (Max): 50 V
Power - Max: 100 mW
Frequency - Transition: 250 MHz
Resistor - Base (R1): 1 kOhms
Resistor - Emitter Base (R2): 10 kOhms
Resistors Included: R1 and R2
на замовлення 3000 шт:
термін постачання 21-31 дні (днів)
| Кількість | Ціна |
|---|---|
| 24+ | 13.48 грн |
| 39+ | 7.94 грн |
| 100+ | 4.94 грн |
| 500+ | 3.38 грн |
| 1000+ | 2.97 грн |
| XPH4R714MC,L1XHQ |
![]() |
Виробник: Toshiba Semiconductor and Storage
Description: MOSFET P-CH 40V 60A 8SOP
Packaging: Tape & Reel (TR)
Package / Case: 8-PowerVDFN
Mounting Type: Surface Mount
Operating Temperature: 175°C
Technology: MOSFET (Metal Oxide)
FET Type: P-Channel
Current - Continuous Drain (Id) @ 25°C: 60A (Ta)
Rds On (Max) @ Id, Vgs: 4.7mOhm @ 30A, 10V
Power Dissipation (Max): 960mW (Ta), 132W (Tc)
Vgs(th) (Max) @ Id: 2.1V @ 1mA
Supplier Device Package: 8-SOP Advance (5x5)
Grade: Automotive
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): +10V, -20V
Drain to Source Voltage (Vdss): 40 V
Gate Charge (Qg) (Max) @ Vgs: 160 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 5640 pF @ 10 V
Qualification: AEC-Q101
Description: MOSFET P-CH 40V 60A 8SOP
Packaging: Tape & Reel (TR)
Package / Case: 8-PowerVDFN
Mounting Type: Surface Mount
Operating Temperature: 175°C
Technology: MOSFET (Metal Oxide)
FET Type: P-Channel
Current - Continuous Drain (Id) @ 25°C: 60A (Ta)
Rds On (Max) @ Id, Vgs: 4.7mOhm @ 30A, 10V
Power Dissipation (Max): 960mW (Ta), 132W (Tc)
Vgs(th) (Max) @ Id: 2.1V @ 1mA
Supplier Device Package: 8-SOP Advance (5x5)
Grade: Automotive
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): +10V, -20V
Drain to Source Voltage (Vdss): 40 V
Gate Charge (Qg) (Max) @ Vgs: 160 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 5640 pF @ 10 V
Qualification: AEC-Q101
на замовлення 10000 шт:
термін постачання 21-31 дні (днів)
| Кількість | Ціна |
|---|---|
| 5000+ | 34.47 грн |
| 10000+ | 31.13 грн |
| XPH4R714MC,L1XHQ |
![]() |
Виробник: Toshiba Semiconductor and Storage
Description: MOSFET P-CH 40V 60A 8SOP
Packaging: Cut Tape (CT)
Package / Case: 8-PowerVDFN
Mounting Type: Surface Mount
Operating Temperature: 175°C
Technology: MOSFET (Metal Oxide)
FET Type: P-Channel
Current - Continuous Drain (Id) @ 25°C: 60A (Ta)
Rds On (Max) @ Id, Vgs: 4.7mOhm @ 30A, 10V
Power Dissipation (Max): 960mW (Ta), 132W (Tc)
Vgs(th) (Max) @ Id: 2.1V @ 1mA
Supplier Device Package: 8-SOP Advance (5x5)
Grade: Automotive
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): +10V, -20V
Drain to Source Voltage (Vdss): 40 V
Gate Charge (Qg) (Max) @ Vgs: 160 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 5640 pF @ 10 V
Qualification: AEC-Q101
Description: MOSFET P-CH 40V 60A 8SOP
Packaging: Cut Tape (CT)
Package / Case: 8-PowerVDFN
Mounting Type: Surface Mount
Operating Temperature: 175°C
Technology: MOSFET (Metal Oxide)
FET Type: P-Channel
Current - Continuous Drain (Id) @ 25°C: 60A (Ta)
Rds On (Max) @ Id, Vgs: 4.7mOhm @ 30A, 10V
Power Dissipation (Max): 960mW (Ta), 132W (Tc)
Vgs(th) (Max) @ Id: 2.1V @ 1mA
Supplier Device Package: 8-SOP Advance (5x5)
Grade: Automotive
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): +10V, -20V
Drain to Source Voltage (Vdss): 40 V
Gate Charge (Qg) (Max) @ Vgs: 160 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 5640 pF @ 10 V
Qualification: AEC-Q101
на замовлення 11398 шт:
термін постачання 21-31 дні (днів)
| Кількість | Ціна |
|---|---|
| 3+ | 132.42 грн |
| 10+ | 81.40 грн |
| 100+ | 54.72 грн |
| 500+ | 40.64 грн |
| 1000+ | 37.19 грн |
| 2000+ | 34.94 грн |
| XPH4R10ANB,L1XHQ |
![]() |
Виробник: Toshiba Semiconductor and Storage
Description: MOSFET N-CH 100V 70A 8SOP
Packaging: Tape & Reel (TR)
Package / Case: 8-PowerVDFN
Mounting Type: Surface Mount
Operating Temperature: 175°C
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 70A (Ta)
Rds On (Max) @ Id, Vgs: 4.1mOhm @ 35A, 10V
Power Dissipation (Max): 960mW (Ta), 170W (Tc)
Vgs(th) (Max) @ Id: 3.5V @ 1mA
Supplier Device Package: 8-SOP Advance (5x5)
Grade: Automotive
Drive Voltage (Max Rds On, Min Rds On): 6V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 100 V
Gate Charge (Qg) (Max) @ Vgs: 75 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 4970 pF @ 10 V
Qualification: AEC-Q101
Description: MOSFET N-CH 100V 70A 8SOP
Packaging: Tape & Reel (TR)
Package / Case: 8-PowerVDFN
Mounting Type: Surface Mount
Operating Temperature: 175°C
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 70A (Ta)
Rds On (Max) @ Id, Vgs: 4.1mOhm @ 35A, 10V
Power Dissipation (Max): 960mW (Ta), 170W (Tc)
Vgs(th) (Max) @ Id: 3.5V @ 1mA
Supplier Device Package: 8-SOP Advance (5x5)
Grade: Automotive
Drive Voltage (Max Rds On, Min Rds On): 6V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 100 V
Gate Charge (Qg) (Max) @ Vgs: 75 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 4970 pF @ 10 V
Qualification: AEC-Q101
на замовлення 30000 шт:
термін постачання 21-31 дні (днів)
| Кількість | Ціна |
|---|---|
| 5000+ | 43.83 грн |
| XPH4R10ANB,L1XHQ |
![]() |
Виробник: Toshiba Semiconductor and Storage
Description: MOSFET N-CH 100V 70A 8SOP
Packaging: Cut Tape (CT)
Package / Case: 8-PowerVDFN
Mounting Type: Surface Mount
Operating Temperature: 175°C
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 70A (Ta)
Rds On (Max) @ Id, Vgs: 4.1mOhm @ 35A, 10V
Power Dissipation (Max): 960mW (Ta), 170W (Tc)
Vgs(th) (Max) @ Id: 3.5V @ 1mA
Supplier Device Package: 8-SOP Advance (5x5)
Grade: Automotive
Drive Voltage (Max Rds On, Min Rds On): 6V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 100 V
Gate Charge (Qg) (Max) @ Vgs: 75 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 4970 pF @ 10 V
Qualification: AEC-Q101
Description: MOSFET N-CH 100V 70A 8SOP
Packaging: Cut Tape (CT)
Package / Case: 8-PowerVDFN
Mounting Type: Surface Mount
Operating Temperature: 175°C
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 70A (Ta)
Rds On (Max) @ Id, Vgs: 4.1mOhm @ 35A, 10V
Power Dissipation (Max): 960mW (Ta), 170W (Tc)
Vgs(th) (Max) @ Id: 3.5V @ 1mA
Supplier Device Package: 8-SOP Advance (5x5)
Grade: Automotive
Drive Voltage (Max Rds On, Min Rds On): 6V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 100 V
Gate Charge (Qg) (Max) @ Vgs: 75 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 4970 pF @ 10 V
Qualification: AEC-Q101
на замовлення 33237 шт:
термін постачання 21-31 дні (днів)
| Кількість | Ціна |
|---|---|
| 2+ | 158.59 грн |
| 10+ | 97.74 грн |
| 100+ | 66.52 грн |
| 500+ | 49.90 грн |
| 1000+ | 48.48 грн |
| DF2B7AE,H3F |
![]() |
Виробник: Toshiba Semiconductor and Storage
Description: TVS DIODE 5.5VWM 20VC ESC
Packaging: Tape & Reel (TR)
Package / Case: SC-79, SOD-523
Mounting Type: Surface Mount
Type: Zener
Operating Temperature: 150°C (TJ)
Capacitance @ Frequency: 8.5pF @ 1MHz
Current - Peak Pulse (10/1000µs): 4A (8/20µs)
Voltage - Reverse Standoff (Typ): 5.5V (Max)
Supplier Device Package: ESC
Bidirectional Channels: 1
Voltage - Breakdown (Min): 5.8V
Voltage - Clamping (Max) @ Ipp: 20V
Power - Peak Pulse: 80W
Power Line Protection: No
Description: TVS DIODE 5.5VWM 20VC ESC
Packaging: Tape & Reel (TR)
Package / Case: SC-79, SOD-523
Mounting Type: Surface Mount
Type: Zener
Operating Temperature: 150°C (TJ)
Capacitance @ Frequency: 8.5pF @ 1MHz
Current - Peak Pulse (10/1000µs): 4A (8/20µs)
Voltage - Reverse Standoff (Typ): 5.5V (Max)
Supplier Device Package: ESC
Bidirectional Channels: 1
Voltage - Breakdown (Min): 5.8V
Voltage - Clamping (Max) @ Ipp: 20V
Power - Peak Pulse: 80W
Power Line Protection: No
на замовлення 76000 шт:
термін постачання 21-31 дні (днів)
| Кількість | Ціна |
|---|---|
| 4000+ | 2.68 грн |
| 8000+ | 2.31 грн |
| 12000+ | 2.17 грн |
| 20000+ | 1.89 грн |
| 28000+ | 1.80 грн |
| 40000+ | 1.72 грн |
| DF2B7AE,H3F |
![]() |
Виробник: Toshiba Semiconductor and Storage
Description: TVS DIODE 5.5VWM 20VC ESC
Packaging: Cut Tape (CT)
Package / Case: SC-79, SOD-523
Mounting Type: Surface Mount
Type: Zener
Operating Temperature: 150°C (TJ)
Capacitance @ Frequency: 8.5pF @ 1MHz
Current - Peak Pulse (10/1000µs): 4A (8/20µs)
Voltage - Reverse Standoff (Typ): 5.5V (Max)
Supplier Device Package: ESC
Bidirectional Channels: 1
Voltage - Breakdown (Min): 5.8V
Voltage - Clamping (Max) @ Ipp: 20V
Power - Peak Pulse: 80W
Power Line Protection: No
Description: TVS DIODE 5.5VWM 20VC ESC
Packaging: Cut Tape (CT)
Package / Case: SC-79, SOD-523
Mounting Type: Surface Mount
Type: Zener
Operating Temperature: 150°C (TJ)
Capacitance @ Frequency: 8.5pF @ 1MHz
Current - Peak Pulse (10/1000µs): 4A (8/20µs)
Voltage - Reverse Standoff (Typ): 5.5V (Max)
Supplier Device Package: ESC
Bidirectional Channels: 1
Voltage - Breakdown (Min): 5.8V
Voltage - Clamping (Max) @ Ipp: 20V
Power - Peak Pulse: 80W
Power Line Protection: No
на замовлення 81499 шт:
термін постачання 21-31 дні (днів)
| Кількість | Ціна |
|---|---|
| 23+ | 14.27 грн |
| 37+ | 8.32 грн |
| 100+ | 5.12 грн |
| 500+ | 3.50 грн |
| 1000+ | 3.08 грн |
| 2000+ | 2.72 грн |
| TK1K7A60F,S4X |
![]() |
Виробник: Toshiba Semiconductor and Storage
Description: X35 PB-F POWER MOSFET TRANSISTOR
Packaging: Tube
Package / Case: TO-220-3 Full Pack
Mounting Type: Through Hole
Operating Temperature: 150°C
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 4A (Ta)
Rds On (Max) @ Id, Vgs: 1.7Ohm @ 2A, 10V
Power Dissipation (Max): 35W (Tc)
Vgs(th) (Max) @ Id: 4V @ 460µA
Supplier Device Package: TO-220SIS
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±30V
Drain to Source Voltage (Vdss): 600 V
Gate Charge (Qg) (Max) @ Vgs: 16 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 560 pF @ 300 V
Description: X35 PB-F POWER MOSFET TRANSISTOR
Packaging: Tube
Package / Case: TO-220-3 Full Pack
Mounting Type: Through Hole
Operating Temperature: 150°C
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 4A (Ta)
Rds On (Max) @ Id, Vgs: 1.7Ohm @ 2A, 10V
Power Dissipation (Max): 35W (Tc)
Vgs(th) (Max) @ Id: 4V @ 460µA
Supplier Device Package: TO-220SIS
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±30V
Drain to Source Voltage (Vdss): 600 V
Gate Charge (Qg) (Max) @ Vgs: 16 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 560 pF @ 300 V
на замовлення 1 шт:
термін постачання 21-31 дні (днів)
| TCR3RM10A,LF |
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Виробник: Toshiba Semiconductor and Storage
Description: IC REG LINEAR 1V 300MA 4DFNC
Operating Temperature: -40°C ~ 85°C
Current - Output: 300mA
Mounting Type: Surface Mount
Output Type: Fixed
Package / Case: 4-XDFN Exposed Pad
Packaging: Tape & Reel (TR)
Protection Features: Over Current, Over Temperature
Voltage Dropout (Max): 0.13V @ 300mA
PSRR: 100dB (1kHz)
Part Status: Obsolete
Voltage - Output (Min/Fixed): 1V
Supplier Device Package: 4-DFNC (1x1)
Number of Regulators: 1
Voltage - Input (Max): 5.5V
Output Configuration: Positive
Description: IC REG LINEAR 1V 300MA 4DFNC
Operating Temperature: -40°C ~ 85°C
Current - Output: 300mA
Mounting Type: Surface Mount
Output Type: Fixed
Package / Case: 4-XDFN Exposed Pad
Packaging: Tape & Reel (TR)
Protection Features: Over Current, Over Temperature
Voltage Dropout (Max): 0.13V @ 300mA
PSRR: 100dB (1kHz)
Part Status: Obsolete
Voltage - Output (Min/Fixed): 1V
Supplier Device Package: 4-DFNC (1x1)
Number of Regulators: 1
Voltage - Input (Max): 5.5V
Output Configuration: Positive
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