Продукція > TOSHIBA SEMICONDUCTOR AND STORAGE > Всі товари виробника TOSHIBA SEMICONDUCTOR AND STORAGE (13538) > Сторінка 144 з 226
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RN4989FE,LF(CT | Toshiba Semiconductor and Storage |
Description: NPN + PNP BRT Q1BSR47KOHM Q1BER2Packaging: Tape & Reel (TR) Package / Case: SOT-563, SOT-666 Mounting Type: Surface Mount Transistor Type: 1 NPN, 1 PNP - Pre-Biased (Dual) Power - Max: 100mW Current - Collector (Ic) (Max): 100mA Voltage - Collector Emitter Breakdown (Max): 50V Vce Saturation (Max) @ Ib, Ic: 300mV @ 250µA, 5mA Current - Collector Cutoff (Max): 500nA DC Current Gain (hFE) (Min) @ Ic, Vce: 70 @ 10mA, 5V Frequency - Transition: 250MHz, 200MHz Resistor - Base (R1): 47kOhms Resistor - Emitter Base (R2): 22kOhms Supplier Device Package: ES6 |
на замовлення 4000 шт: термін постачання 21-31 дні (днів) |
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RN4989FE,LF(CT | Toshiba Semiconductor and Storage |
Description: NPN + PNP BRT Q1BSR47KOHM Q1BER2Packaging: Cut Tape (CT) Package / Case: SOT-563, SOT-666 Mounting Type: Surface Mount Transistor Type: 1 NPN, 1 PNP - Pre-Biased (Dual) Power - Max: 100mW Current - Collector (Ic) (Max): 100mA Voltage - Collector Emitter Breakdown (Max): 50V Vce Saturation (Max) @ Ib, Ic: 300mV @ 250µA, 5mA Current - Collector Cutoff (Max): 500nA DC Current Gain (hFE) (Min) @ Ic, Vce: 70 @ 10mA, 5V Frequency - Transition: 250MHz, 200MHz Resistor - Base (R1): 47kOhms Resistor - Emitter Base (R2): 22kOhms Supplier Device Package: ES6 |
на замовлення 4000 шт: термін постачання 21-31 дні (днів) |
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TC74HC00AFELF | Toshiba Semiconductor and Storage |
Description: IC GATE NAND 4CH 2-INP 14SOPPackaging: Tape & Reel (TR) Package / Case: 14-SOIC (0.209", 5.30mm Width) Mounting Type: Surface Mount Logic Type: NAND Gate Operating Temperature: -40°C ~ 85°C Voltage - Supply: 2V ~ 6V Current - Output High, Low: 5.2mA, 5.2mA Number of Inputs: 2 Supplier Device Package: 14-SOP Input Logic Level - High: 1.5V ~ 4.2V Input Logic Level - Low: 0.5V ~ 1.8V Max Propagation Delay @ V, Max CL: 13ns @ 6V, 50pF Part Status: Not For New Designs Number of Circuits: 4 Current - Quiescent (Max): 1 µA |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||||||||||||
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TC78H653FTG,EL | Toshiba Semiconductor and Storage |
Description: IC MTR DRVR BIPOLR 1.8-7V 16VQONPackaging: Tape & Reel (TR) Package / Case: 16-VFQFN Exposed Pad Mounting Type: Surface Mount Function: Driver - Fully Integrated, Control and Power Stage Current - Output: 4A Operating Temperature: -40°C ~ 105°C Output Configuration: Half Bridge (4) Voltage - Supply: 1.8V ~ 7V Applications: General Purpose Technology: DMOS Voltage - Load: 1.8V ~ 7V Supplier Device Package: 16-VQFN (3x3) Motor Type - Stepper: Bipolar Motor Type - AC, DC: Brushed DC |
на замовлення 12000 шт: термін постачання 21-31 дні (днів) |
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TC78H653FTG,EL | Toshiba Semiconductor and Storage |
Description: IC MTR DRVR BIPOLR 1.8-7V 16VQONPackaging: Cut Tape (CT) Package / Case: 16-VFQFN Exposed Pad Mounting Type: Surface Mount Function: Driver - Fully Integrated, Control and Power Stage Current - Output: 4A Operating Temperature: -40°C ~ 105°C Output Configuration: Half Bridge (4) Voltage - Supply: 1.8V ~ 7V Applications: General Purpose Technology: DMOS Voltage - Load: 1.8V ~ 7V Supplier Device Package: 16-VQFN (3x3) Motor Type - Stepper: Bipolar Motor Type - AC, DC: Brushed DC |
на замовлення 18628 шт: термін постачання 21-31 дні (днів) |
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SSM6K361NU,LF | Toshiba Semiconductor and Storage |
Description: MOSFET N-CH 100V 3.5A 6UDFNBPackaging: Tape & Reel (TR) Package / Case: 6-WDFN Exposed Pad Mounting Type: Surface Mount Operating Temperature: 150°C Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 3.5A (Ta) Rds On (Max) @ Id, Vgs: 69mOhm @ 2A, 10V Power Dissipation (Max): 1.25W (Ta) Vgs(th) (Max) @ Id: 2.5V @ 100µA Supplier Device Package: 6-UDFNB (2x2) Part Status: Active Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 100 V Gate Charge (Qg) (Max) @ Vgs: 3.2 nC @ 4.5 V Input Capacitance (Ciss) (Max) @ Vds: 430 pF @ 15 V |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||||||||||||
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SSM6K361NU,LF | Toshiba Semiconductor and Storage |
Description: MOSFET N-CH 100V 3.5A 6UDFNBPackaging: Cut Tape (CT) Package / Case: 6-WDFN Exposed Pad Mounting Type: Surface Mount Operating Temperature: 150°C Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 3.5A (Ta) Rds On (Max) @ Id, Vgs: 69mOhm @ 2A, 10V Power Dissipation (Max): 1.25W (Ta) Vgs(th) (Max) @ Id: 2.5V @ 100µA Supplier Device Package: 6-UDFNB (2x2) Part Status: Active Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 100 V Gate Charge (Qg) (Max) @ Vgs: 3.2 nC @ 4.5 V Input Capacitance (Ciss) (Max) @ Vds: 430 pF @ 15 V |
на замовлення 2324 шт: термін постачання 21-31 дні (днів) |
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TLP3407SRH(TP,E | Toshiba Semiconductor and Storage |
Description: SSR RELAY SPST-NO 1A 0-60VPackaging: Tape & Reel (TR) Package / Case: 4-SMD (0.079", 2.00mm) Output Type: AC, DC Mounting Type: Surface Mount Voltage - Input: 1.4VDC Circuit: SPST-NO (1 Form A) Termination Style: SMD (SMT) Tab Load Current: 1 A Supplier Device Package: S-VSON4T (2x1.45) Part Status: Active Voltage - Load: 0 V ~ 60 V On-State Resistance (Max): 300 mOhms Operating Temperature: -40°C ~ 110°C Relay Type: Photo-Coupled Relay (Photorelay) |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||||||||||||
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TLP3407SRH(TP,E | Toshiba Semiconductor and Storage |
Description: SSR RELAY SPST-NO 1A 0-60VPackaging: Cut Tape (CT) Package / Case: 4-SMD (0.079", 2.00mm) Output Type: AC, DC Mounting Type: Surface Mount Voltage - Input: 1.4VDC Circuit: SPST-NO (1 Form A) Termination Style: SMD (SMT) Tab Load Current: 1 A Supplier Device Package: S-VSON4T (2x1.45) Part Status: Active Voltage - Load: 0 V ~ 60 V On-State Resistance (Max): 300 mOhms Operating Temperature: -40°C ~ 110°C Relay Type: Photo-Coupled Relay (Photorelay) |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||||||||||||
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TLP3407SRL(TP,E | Toshiba Semiconductor and Storage |
Description: SSR RELAY SPST-NO 1A 0-60VPackaging: Tape & Reel (TR) Package / Case: 4-SMD (0.079", 2.00mm) Output Type: AC, DC Mounting Type: Surface Mount Voltage - Input: 1.2VDC Circuit: SPST-NO (1 Form A) Termination Style: SMD (SMT) Tab Load Current: 1 A Supplier Device Package: S-VSON4T (2x1.45) Part Status: Active Voltage - Load: 0 V ~ 60 V On-State Resistance (Max): 300 mOhms Operating Temperature: -40°C ~ 110°C Relay Type: Photo-Coupled Relay (Photorelay) |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||||||||||||
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TLP3407SRL(TP,E | Toshiba Semiconductor and Storage |
Description: SSR RELAY SPST-NO 1A 0-60VPackaging: Cut Tape (CT) Package / Case: 4-SMD (0.079", 2.00mm) Output Type: AC, DC Mounting Type: Surface Mount Voltage - Input: 1.2VDC Circuit: SPST-NO (1 Form A) Termination Style: SMD (SMT) Tab Load Current: 1 A Supplier Device Package: S-VSON4T (2x1.45) Part Status: Active Voltage - Load: 0 V ~ 60 V On-State Resistance (Max): 300 mOhms Operating Temperature: -40°C ~ 110°C Relay Type: Photo-Coupled Relay (Photorelay) |
на замовлення 1364 шт: термін постачання 21-31 дні (днів) |
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TLP3407S(TP,E | Toshiba Semiconductor and Storage |
Description: SSR RELAY SPST-NO 1A 0-60VPackaging: Tape & Reel (TR) Package / Case: 4-SMD (0.079", 2.00mm) Output Type: AC, DC Mounting Type: Surface Mount Voltage - Input: 1.26VDC Circuit: SPST-NO (1 Form A) Termination Style: SMD (SMT) Tab Load Current: 1 A Supplier Device Package: 4-S-VSON Part Status: Active Voltage - Load: 0 V ~ 60 V On-State Resistance (Max): 300 mOhms Operating Temperature: -40°C ~ 110°C Relay Type: Photo-Coupled Relay (Photorelay) |
на замовлення 42500 шт: термін постачання 21-31 дні (днів) |
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TLP3407S(TP,E | Toshiba Semiconductor and Storage |
Description: SSR RELAY SPST-NO 1A 0-60VPackaging: Cut Tape (CT) Package / Case: 4-SMD (0.079", 2.00mm) Output Type: AC, DC Mounting Type: Surface Mount Voltage - Input: 1.26VDC Circuit: SPST-NO (1 Form A) Termination Style: SMD (SMT) Tab Load Current: 1 A Supplier Device Package: 4-S-VSON Part Status: Active Voltage - Load: 0 V ~ 60 V On-State Resistance (Max): 300 mOhms Operating Temperature: -40°C ~ 110°C Relay Type: Photo-Coupled Relay (Photorelay) |
на замовлення 44343 шт: термін постачання 21-31 дні (днів) |
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TLP2372(TPL,E | Toshiba Semiconductor and Storage |
Description: OPTOISOLTR 3.75KV PUSH PULL 6-SOPackaging: Tape & Reel (TR) Package / Case: 6-SOIC (0.179", 4.55mm Width), 5 Leads Output Type: Push-Pull, Totem Pole Mounting Type: Surface Mount Operating Temperature: -40°C ~ 125°C Voltage - Supply: 2.2V ~ 5.5V Voltage - Forward (Vf) (Typ): 1.53V Data Rate: 20Mbps Input Type: DC Voltage - Isolation: 3750Vrms Current - DC Forward (If) (Max): 8mA Inputs - Side 1/Side 2: 1/0 Supplier Device Package: 6-SO, 5 Lead Rise / Fall Time (Typ): 2.2ns, 1.6ns Common Mode Transient Immunity (Min): 20kV/µs Propagation Delay tpLH / tpHL (Max): 75ns, 75ns Part Status: Active Number of Channels: 1 Current - Output / Channel: 8 mA |
на замовлення 3000 шт: термін постачання 21-31 дні (днів) |
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TLP2372(TPL,E | Toshiba Semiconductor and Storage |
Description: OPTOISOLTR 3.75KV PUSH PULL 6-SOPackaging: Cut Tape (CT) Package / Case: 6-SOIC (0.179", 4.55mm Width), 5 Leads Output Type: Push-Pull, Totem Pole Mounting Type: Surface Mount Operating Temperature: -40°C ~ 125°C Voltage - Supply: 2.2V ~ 5.5V Voltage - Forward (Vf) (Typ): 1.53V Data Rate: 20Mbps Input Type: DC Voltage - Isolation: 3750Vrms Current - DC Forward (If) (Max): 8mA Inputs - Side 1/Side 2: 1/0 Supplier Device Package: 6-SO, 5 Lead Rise / Fall Time (Typ): 2.2ns, 1.6ns Common Mode Transient Immunity (Min): 20kV/µs Propagation Delay tpLH / tpHL (Max): 75ns, 75ns Part Status: Active Number of Channels: 1 Current - Output / Channel: 8 mA |
на замовлення 4489 шт: термін постачання 21-31 дні (днів) |
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TLP3553(F) | Toshiba Semiconductor and Storage |
Description: SSR RELAY SPST-NO 3A 0-20VPackaging: Tube Package / Case: 4-DIP (0.300", 7.62mm) Output Type: AC, DC Mounting Type: Through Hole Voltage - Input: 1.33VDC Circuit: SPST-NO (1 Form A) Termination Style: PC Pin Load Current: 3 A Supplier Device Package: 4-DIP Part Status: Active Voltage - Load: 0 V ~ 20 V On-State Resistance (Max): 80 mOhms Operating Temperature: -40°C ~ 85°C Approval Agency: CSA, cUL, UL Relay Type: Photo-Coupled Relay (Photorelay) |
на замовлення 88 шт: термін постачання 21-31 дні (днів) |
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TPH1R306P1,L1Q | Toshiba Semiconductor and Storage |
Description: MOSFET N-CH 60V 100A 8SOPPackaging: Tape & Reel (TR) Package / Case: 8-PowerVDFN Mounting Type: Surface Mount Operating Temperature: 175°C Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 100A (Tc) Rds On (Max) @ Id, Vgs: 1.28mOhm @ 50A, 10V Power Dissipation (Max): 960mW (Ta), 170W (Tc) Vgs(th) (Max) @ Id: 2.5V @ 1mA Supplier Device Package: 8-SOP Advance (5x5) Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 60 V Gate Charge (Qg) (Max) @ Vgs: 91 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 8100 pF @ 30 V |
на замовлення 5000 шт: термін постачання 21-31 дні (днів) |
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TPH1R306P1,L1Q | Toshiba Semiconductor and Storage |
Description: MOSFET N-CH 60V 100A 8SOPPackaging: Cut Tape (CT) Package / Case: 8-PowerVDFN Mounting Type: Surface Mount Operating Temperature: 175°C Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 100A (Tc) Rds On (Max) @ Id, Vgs: 1.28mOhm @ 50A, 10V Power Dissipation (Max): 960mW (Ta), 170W (Tc) Vgs(th) (Max) @ Id: 2.5V @ 1mA Supplier Device Package: 8-SOP Advance (5x5) Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 60 V Gate Charge (Qg) (Max) @ Vgs: 91 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 8100 pF @ 30 V |
на замовлення 9539 шт: термін постачання 21-31 дні (днів) |
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TLP2631(LF5,F) | Toshiba Semiconductor and Storage |
Description: OPTOISO 2.5KV 2CH OPN COLL 8-SMDPackaging: Tube Package / Case: 8-SMD, Gull Wing Output Type: Open Collector, Schottky Clamped Mounting Type: Surface Mount Operating Temperature: -40°C ~ 85°C Voltage - Supply: 4.5V ~ 5.5V Voltage - Forward (Vf) (Typ): 1.65V Data Rate: 10MBd Input Type: DC Voltage - Isolation: 2500Vrms Current - DC Forward (If) (Max): 20mA Inputs - Side 1/Side 2: 2/0 Supplier Device Package: 8-SMD Rise / Fall Time (Typ): 30ns, 30ns Common Mode Transient Immunity (Min): 1kV/µs Propagation Delay tpLH / tpHL (Max): 75ns, 75ns Number of Channels: 2 Current - Output / Channel: 16 mA |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||||||||||||
| TLP2631(LF1,F) | Toshiba Semiconductor and Storage |
Description: PHOTOCOUPLER Packaging: Tube |
товару немає в наявності |
В кошику од. на суму грн. | |||||||||||||||||||
| TLP2631(TP5,F) | Toshiba Semiconductor and Storage |
Description: PHOTOCOUPLER Packaging: Tape & Reel (TR) |
товару немає в наявності |
В кошику од. на суму грн. | |||||||||||||||||||
| TLP2631(MBS,F) | Toshiba Semiconductor and Storage |
Description: PHOTOCOUPLER Packaging: Tube |
товару немає в наявності |
В кошику од. на суму грн. | |||||||||||||||||||
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7UL1G86FU,LF | Toshiba Semiconductor and Storage |
Description: IC GATE XOR 1CH 2-INP 5SSOPPackaging: Tape & Reel (TR) Package / Case: 5-TSSOP, SC-70-5, SOT-353 Mounting Type: Surface Mount Logic Type: XOR (Exclusive OR) Operating Temperature: -40°C ~ 85°C Voltage - Supply: 0.9V ~ 3.6V Current - Output High, Low: 8mA, 8mA Number of Inputs: 2 Supplier Device Package: 5-SSOP Input Logic Level - High: 0.75V ~ 2.48V Input Logic Level - Low: 0.1V ~ 0.4V Max Propagation Delay @ V, Max CL: 4.4ns @ 3.3V, 30pF Number of Circuits: 1 Current - Quiescent (Max): 1 µA |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||||||||||||
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7UL1G86FU,LF | Toshiba Semiconductor and Storage |
Description: IC GATE XOR 1CH 2-INP 5SSOPPackaging: Cut Tape (CT) Package / Case: 5-TSSOP, SC-70-5, SOT-353 Mounting Type: Surface Mount Logic Type: XOR (Exclusive OR) Operating Temperature: -40°C ~ 85°C Voltage - Supply: 0.9V ~ 3.6V Current - Output High, Low: 8mA, 8mA Number of Inputs: 2 Supplier Device Package: 5-SSOP Input Logic Level - High: 0.75V ~ 2.48V Input Logic Level - Low: 0.1V ~ 0.4V Max Propagation Delay @ V, Max CL: 4.4ns @ 3.3V, 30pF Number of Circuits: 1 Current - Quiescent (Max): 1 µA |
на замовлення 2774 шт: термін постачання 21-31 дні (днів) |
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7UL1G02FU,LF | Toshiba Semiconductor and Storage |
Description: IC GATE NOR 1CH 2-INP 5SSOPPackaging: Tape & Reel (TR) Package / Case: 5-TSSOP, SC-70-5, SOT-353 Mounting Type: Surface Mount Logic Type: NOR Gate Operating Temperature: -40°C ~ 85°C Voltage - Supply: 0.9V ~ 3.6V Current - Output High, Low: 8mA, 8mA Number of Inputs: 2 Supplier Device Package: 5-SSOP Input Logic Level - High: 0.75V ~ 2.48V Input Logic Level - Low: 0.1V ~ 0.4V Max Propagation Delay @ V, Max CL: 4.4ns @ 3.3V, 30pF Number of Circuits: 1 Current - Quiescent (Max): 1 µA |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||||||||||||
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7UL1G02FU,LF | Toshiba Semiconductor and Storage |
Description: IC GATE NOR 1CH 2-INP 5SSOPPackaging: Cut Tape (CT) Package / Case: 5-TSSOP, SC-70-5, SOT-353 Mounting Type: Surface Mount Logic Type: NOR Gate Operating Temperature: -40°C ~ 85°C Voltage - Supply: 0.9V ~ 3.6V Current - Output High, Low: 8mA, 8mA Number of Inputs: 2 Supplier Device Package: 5-SSOP Input Logic Level - High: 0.75V ~ 2.48V Input Logic Level - Low: 0.1V ~ 0.4V Max Propagation Delay @ V, Max CL: 4.4ns @ 3.3V, 30pF Number of Circuits: 1 Current - Quiescent (Max): 1 µA |
на замовлення 4940 шт: термін постачання 21-31 дні (днів) |
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7UL1G08FU,LF | Toshiba Semiconductor and Storage |
Description: IC GATE AND 1CH 2-INP 5SSOP Packaging: Tape & Reel (TR) Package / Case: 5-TSSOP, SC-70-5, SOT-353 Mounting Type: Surface Mount Logic Type: AND Gate Operating Temperature: -40°C ~ 85°C Voltage - Supply: 0.9V ~ 3.6V Current - Output High, Low: 8mA, 8mA Number of Inputs: 2 Supplier Device Package: 5-SSOP Input Logic Level - High: 0.75V ~ 2.48V Input Logic Level - Low: 0.1V ~ 0.4V Max Propagation Delay @ V, Max CL: 4.4ns @ 3.3V, 30pF Part Status: Active Number of Circuits: 1 Current - Quiescent (Max): 1 µA |
на замовлення 3000 шт: термін постачання 21-31 дні (днів) |
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7UL1G08FU,LF | Toshiba Semiconductor and Storage |
Description: IC GATE AND 1CH 2-INP 5SSOP Packaging: Cut Tape (CT) Package / Case: 5-TSSOP, SC-70-5, SOT-353 Mounting Type: Surface Mount Logic Type: AND Gate Operating Temperature: -40°C ~ 85°C Voltage - Supply: 0.9V ~ 3.6V Current - Output High, Low: 8mA, 8mA Number of Inputs: 2 Supplier Device Package: 5-SSOP Input Logic Level - High: 0.75V ~ 2.48V Input Logic Level - Low: 0.1V ~ 0.4V Max Propagation Delay @ V, Max CL: 4.4ns @ 3.3V, 30pF Part Status: Active Number of Circuits: 1 Current - Quiescent (Max): 1 µA |
на замовлення 3385 шт: термін постачання 21-31 дні (днів) |
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7UL1G32FU,LF | Toshiba Semiconductor and Storage |
Description: IC GATE OR 1CH 2-INP 5SSOP Packaging: Tape & Reel (TR) Package / Case: 5-TSSOP, SC-70-5, SOT-353 Mounting Type: Surface Mount Logic Type: OR Gate Operating Temperature: -40°C ~ 85°C Voltage - Supply: 0.9V ~ 3.6V Current - Output High, Low: 8mA, 8mA Number of Inputs: 2 Supplier Device Package: 5-SSOP Input Logic Level - High: 0.75V ~ 2.48V Input Logic Level - Low: 0.1V ~ 0.4V Max Propagation Delay @ V, Max CL: 4.4ns @ 3.3V, 30pF Part Status: Active Number of Circuits: 1 Current - Quiescent (Max): 1 µA |
на замовлення 3000 шт: термін постачання 21-31 дні (днів) |
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7UL1G32FU,LF | Toshiba Semiconductor and Storage |
Description: IC GATE OR 1CH 2-INP 5SSOP Packaging: Cut Tape (CT) Package / Case: 5-TSSOP, SC-70-5, SOT-353 Mounting Type: Surface Mount Logic Type: OR Gate Operating Temperature: -40°C ~ 85°C Voltage - Supply: 0.9V ~ 3.6V Current - Output High, Low: 8mA, 8mA Number of Inputs: 2 Supplier Device Package: 5-SSOP Input Logic Level - High: 0.75V ~ 2.48V Input Logic Level - Low: 0.1V ~ 0.4V Max Propagation Delay @ V, Max CL: 4.4ns @ 3.3V, 30pF Part Status: Active Number of Circuits: 1 Current - Quiescent (Max): 1 µA |
на замовлення 3410 шт: термін постачання 21-31 дні (днів) |
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7UL1G04FU,LF | Toshiba Semiconductor and Storage |
Description: IC INVERTER 1CH 1-INP 5SSOP Packaging: Tape & Reel (TR) Package / Case: 5-TSSOP, SC-70-5, SOT-353 Mounting Type: Surface Mount Logic Type: Inverter Operating Temperature: -40°C ~ 125°C Voltage - Supply: 0.9V ~ 3.6V Current - Output High, Low: 8mA, 8mA Number of Inputs: 1 Supplier Device Package: 5-SSOP Input Logic Level - High: 0.75V ~ 2.48V Input Logic Level - Low: 0.1V ~ 0.4V Max Propagation Delay @ V, Max CL: 4.4ns @ 3.3V, 30pF Part Status: Active Number of Circuits: 1 Current - Quiescent (Max): 1 µA |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||||||||||||
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7UL1G04FU,LF | Toshiba Semiconductor and Storage |
Description: IC INVERTER 1CH 1-INP 5SSOP Packaging: Cut Tape (CT) Package / Case: 5-TSSOP, SC-70-5, SOT-353 Mounting Type: Surface Mount Logic Type: Inverter Operating Temperature: -40°C ~ 125°C Voltage - Supply: 0.9V ~ 3.6V Current - Output High, Low: 8mA, 8mA Number of Inputs: 1 Supplier Device Package: 5-SSOP Input Logic Level - High: 0.75V ~ 2.48V Input Logic Level - Low: 0.1V ~ 0.4V Max Propagation Delay @ V, Max CL: 4.4ns @ 3.3V, 30pF Part Status: Active Number of Circuits: 1 Current - Quiescent (Max): 1 µA |
на замовлення 2854 шт: термін постачання 21-31 дні (днів) |
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7UL1G34FU,LF | Toshiba Semiconductor and Storage |
Description: IC BUFFER NON-INVERT 3.6V USVPackaging: Tape & Reel (TR) Package / Case: 5-TSSOP, SC-70-5, SOT-353 Mounting Type: Surface Mount Number of Elements: 1 Logic Type: Buffer, Non-Inverting Operating Temperature: -40°C ~ 85°C Voltage - Supply: 0.9V ~ 3.6V Number of Bits per Element: 1 Current - Output High, Low: 8mA, 8mA Supplier Device Package: 5-SSOP |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||||||||||||
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7UL1G34FU,LF | Toshiba Semiconductor and Storage |
Description: IC BUFFER NON-INVERT 3.6V USVPackaging: Cut Tape (CT) Package / Case: 5-TSSOP, SC-70-5, SOT-353 Mounting Type: Surface Mount Number of Elements: 1 Logic Type: Buffer, Non-Inverting Operating Temperature: -40°C ~ 85°C Voltage - Supply: 0.9V ~ 3.6V Number of Bits per Element: 1 Current - Output High, Low: 8mA, 8mA Supplier Device Package: 5-SSOP |
на замовлення 2900 шт: термін постачання 21-31 дні (днів) |
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7UL1G04FS,LF | Toshiba Semiconductor and Storage |
Description: IC INVERTER 1CH 1-INP FSVPackaging: Tape & Reel (TR) Package / Case: SOT-953 Mounting Type: Surface Mount Logic Type: Inverter Operating Temperature: -40°C ~ 125°C Voltage - Supply: 0.9V ~ 3.6V Current - Output High, Low: 8mA, 8mA Number of Inputs: 1 Supplier Device Package: fSV Input Logic Level - High: 0.75V ~ 2.48V Input Logic Level - Low: 0.1V ~ 0.4V Max Propagation Delay @ V, Max CL: 4.4ns @ 3.3V, 30pF Part Status: Active Number of Circuits: 1 Current - Quiescent (Max): 1 µA |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||||||||||||
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7UL1G04FS,LF | Toshiba Semiconductor and Storage |
Description: IC INVERTER 1CH 1-INP FSVPackaging: Cut Tape (CT) Package / Case: SOT-953 Mounting Type: Surface Mount Logic Type: Inverter Operating Temperature: -40°C ~ 125°C Voltage - Supply: 0.9V ~ 3.6V Current - Output High, Low: 8mA, 8mA Number of Inputs: 1 Supplier Device Package: fSV Input Logic Level - High: 0.75V ~ 2.48V Input Logic Level - Low: 0.1V ~ 0.4V Max Propagation Delay @ V, Max CL: 4.4ns @ 3.3V, 30pF Part Status: Active Number of Circuits: 1 Current - Quiescent (Max): 1 µA |
на замовлення 9850 шт: термін постачання 21-31 дні (днів) |
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7UL1G126FS,LF | Toshiba Semiconductor and Storage |
Description: IC BUFFER NON-INVERT 3.6V FSVPackaging: Tape & Reel (TR) Package / Case: SOT-953 Output Type: 3-State Mounting Type: Surface Mount Number of Elements: 1 Logic Type: Buffer, Non-Inverting Operating Temperature: -40°C ~ 85°C Voltage - Supply: 0.9V ~ 3.6V Number of Bits per Element: 1 Current - Output High, Low: 8mA, 8mA Supplier Device Package: fSV Part Status: Active |
на замовлення 30000 шт: термін постачання 21-31 дні (днів) |
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7UL1G126FS,LF | Toshiba Semiconductor and Storage |
Description: IC BUFFER NON-INVERT 3.6V FSVPackaging: Cut Tape (CT) Package / Case: SOT-953 Output Type: 3-State Mounting Type: Surface Mount Number of Elements: 1 Logic Type: Buffer, Non-Inverting Operating Temperature: -40°C ~ 85°C Voltage - Supply: 0.9V ~ 3.6V Number of Bits per Element: 1 Current - Output High, Low: 8mA, 8mA Supplier Device Package: fSV Part Status: Active |
на замовлення 36609 шт: термін постачання 21-31 дні (днів) |
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RN1112MFV,L3F | Toshiba Semiconductor and Storage |
Description: TRANS PREBIAS NPN 50V 0.1A VESMPackaging: Tape & Reel (TR) Package / Case: SOT-723 Mounting Type: Surface Mount Transistor Type: NPN - Pre-Biased Vce Saturation (Max) @ Ib, Ic: 300mV @ 500µA, 5mA Current - Collector Cutoff (Max): 100nA (ICBO) DC Current Gain (hFE) (Min) @ Ic, Vce: 120 @ 1mA, 5V Supplier Device Package: VESM Current - Collector (Ic) (Max): 100 mA Voltage - Collector Emitter Breakdown (Max): 50 V Power - Max: 150 mW Resistor - Base (R1): 22 kOhms |
на замовлення 8000 шт: термін постачання 21-31 дні (днів) |
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RN1112MFV,L3F | Toshiba Semiconductor and Storage |
Description: TRANS PREBIAS NPN 50V 0.1A VESMPackaging: Cut Tape (CT) Package / Case: SOT-723 Mounting Type: Surface Mount Transistor Type: NPN - Pre-Biased Vce Saturation (Max) @ Ib, Ic: 300mV @ 500µA, 5mA Current - Collector Cutoff (Max): 100nA (ICBO) DC Current Gain (hFE) (Min) @ Ic, Vce: 120 @ 1mA, 5V Supplier Device Package: VESM Current - Collector (Ic) (Max): 100 mA Voltage - Collector Emitter Breakdown (Max): 50 V Power - Max: 150 mW Resistor - Base (R1): 22 kOhms |
на замовлення 8000 шт: термін постачання 21-31 дні (днів) |
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RN1113,LF(CT | Toshiba Semiconductor and Storage |
Description: TRANS PREBIAS NPN 50V 0.1A SSM |
на замовлення 3000 шт: термін постачання 21-31 дні (днів) |
В кошику од. на суму грн. | ||||||||||||||||||
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RN1113,LF(CT | Toshiba Semiconductor and Storage |
Description: TRANS PREBIAS NPN 50V 0.1A SSM |
на замовлення 3000 шт: термін постачання 21-31 дні (днів) |
В кошику од. на суму грн. | ||||||||||||||||||
| RN1112(TE85L,F) | Toshiba Semiconductor and Storage |
Description: TRANS PREBIAS NPN 50V 0.1A SSM |
на замовлення 3000 шт: термін постачання 21-31 дні (днів) |
В кошику од. на суму грн. | |||||||||||||||||||
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RN1117(TE85L,F) | Toshiba Semiconductor and Storage |
Description: TRANS PREBIAS NPN 50V 0.1A SSMPackaging: Tape & Reel (TR) Package / Case: SC-75, SOT-416 Mounting Type: Surface Mount Transistor Type: NPN - Pre-Biased Vce Saturation (Max) @ Ib, Ic: 300mV @ 250µA, 5mA Current - Collector Cutoff (Max): 500nA DC Current Gain (hFE) (Min) @ Ic, Vce: 30 @ 10mA, 5V Supplier Device Package: SSM Part Status: Active Current - Collector (Ic) (Max): 100 mA Voltage - Collector Emitter Breakdown (Max): 50 V Power - Max: 100 mW Frequency - Transition: 250 MHz Resistor - Base (R1): 10 kOhms Resistor - Emitter Base (R2): 4.7 kOhms |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||||||||||||
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RN1117(TE85L,F) | Toshiba Semiconductor and Storage |
Description: TRANS PREBIAS NPN 50V 0.1A SSMPackaging: Cut Tape (CT) Package / Case: SC-75, SOT-416 Mounting Type: Surface Mount Transistor Type: NPN - Pre-Biased Vce Saturation (Max) @ Ib, Ic: 300mV @ 250µA, 5mA Current - Collector Cutoff (Max): 500nA DC Current Gain (hFE) (Min) @ Ic, Vce: 30 @ 10mA, 5V Supplier Device Package: SSM Part Status: Active Current - Collector (Ic) (Max): 100 mA Voltage - Collector Emitter Breakdown (Max): 50 V Power - Max: 100 mW Frequency - Transition: 250 MHz Resistor - Base (R1): 10 kOhms Resistor - Emitter Base (R2): 4.7 kOhms |
на замовлення 898 шт: термін постачання 21-31 дні (днів) |
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| RN1118(TE85L,F) | Toshiba Semiconductor and Storage |
Description: TRANS PREBIAS NPN 50V 0.1A SSM |
товару немає в наявності |
В кошику од. на суму грн. | |||||||||||||||||||
| RN1118(TE85L,F) | Toshiba Semiconductor and Storage |
Description: TRANS PREBIAS NPN 50V 0.1A SSM |
на замовлення 2970 шт: термін постачання 21-31 дні (днів) |
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RN1115MFV,L3F | Toshiba Semiconductor and Storage |
Description: TRANS PREBIAS NPN 50V 0.1A VESMPackaging: Tape & Reel (TR) Package / Case: SOT-723 Mounting Type: Surface Mount Transistor Type: NPN - Pre-Biased Vce Saturation (Max) @ Ib, Ic: 300mV @ 250µA, 5mA Current - Collector Cutoff (Max): 500nA DC Current Gain (hFE) (Min) @ Ic, Vce: 50 @ 10mA, 5V Supplier Device Package: VESM Current - Collector (Ic) (Max): 100 mA Voltage - Collector Emitter Breakdown (Max): 50 V Power - Max: 150 mW Frequency - Transition: 250 MHz Resistor - Base (R1): 2.2 kOhms Resistor - Emitter Base (R2): 10 kOhms Resistors Included: R1 and R2 |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||||||||||||
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RN1114,LF | Toshiba Semiconductor and Storage |
Description: TRANS PREBIAS NPN 50V 0.1A SSMPackaging: Tape & Reel (TR) Current - Collector (Ic) (Max): 100 mA Voltage - Collector Emitter Breakdown (Max): 50 V Power - Max: 100 mW Frequency - Transition: 250 MHz Resistor - Base (R1): 1 kOhms Resistor - Emitter Base (R2): 10 kOhms Package / Case: SC-75, SOT-416 Mounting Type: Surface Mount Transistor Type: NPN - Pre-Biased Vce Saturation (Max) @ Ib, Ic: 300mV @ 250µA, 5mA Current - Collector Cutoff (Max): 500nA DC Current Gain (hFE) (Min) @ Ic, Vce: 50 @ 10mA, 5V Supplier Device Package: SSM Resistors Included: R1 and R2 |
на замовлення 3000 шт: термін постачання 21-31 дні (днів) |
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RN1114,LF | Toshiba Semiconductor and Storage |
Description: TRANS PREBIAS NPN 50V 0.1A SSMPackaging: Cut Tape (CT) Current - Collector (Ic) (Max): 100 mA Voltage - Collector Emitter Breakdown (Max): 50 V Power - Max: 100 mW Frequency - Transition: 250 MHz Resistor - Base (R1): 1 kOhms Resistor - Emitter Base (R2): 10 kOhms Package / Case: SC-75, SOT-416 Mounting Type: Surface Mount Transistor Type: NPN - Pre-Biased Vce Saturation (Max) @ Ib, Ic: 300mV @ 250µA, 5mA Current - Collector Cutoff (Max): 500nA DC Current Gain (hFE) (Min) @ Ic, Vce: 50 @ 10mA, 5V Supplier Device Package: SSM Resistors Included: R1 and R2 |
на замовлення 3000 шт: термін постачання 21-31 дні (днів) |
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XPH4R714MC,L1XHQ | Toshiba Semiconductor and Storage |
Description: MOSFET P-CH 40V 60A 8SOPPackaging: Tape & Reel (TR) Package / Case: 8-PowerVDFN Mounting Type: Surface Mount Operating Temperature: 175°C Technology: MOSFET (Metal Oxide) FET Type: P-Channel Current - Continuous Drain (Id) @ 25°C: 60A (Ta) Rds On (Max) @ Id, Vgs: 4.7mOhm @ 30A, 10V Power Dissipation (Max): 960mW (Ta), 132W (Tc) Vgs(th) (Max) @ Id: 2.1V @ 1mA Supplier Device Package: 8-SOP Advance (5x5) Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Vgs (Max): +10V, -20V Drain to Source Voltage (Vdss): 40 V Gate Charge (Qg) (Max) @ Vgs: 160 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 5640 pF @ 10 V Grade: Automotive Qualification: AEC-Q101 |
на замовлення 5000 шт: термін постачання 21-31 дні (днів) |
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XPH4R714MC,L1XHQ | Toshiba Semiconductor and Storage |
Description: MOSFET P-CH 40V 60A 8SOPPackaging: Cut Tape (CT) Package / Case: 8-PowerVDFN Mounting Type: Surface Mount Operating Temperature: 175°C Technology: MOSFET (Metal Oxide) FET Type: P-Channel Current - Continuous Drain (Id) @ 25°C: 60A (Ta) Rds On (Max) @ Id, Vgs: 4.7mOhm @ 30A, 10V Power Dissipation (Max): 960mW (Ta), 132W (Tc) Vgs(th) (Max) @ Id: 2.1V @ 1mA Supplier Device Package: 8-SOP Advance (5x5) Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Vgs (Max): +10V, -20V Drain to Source Voltage (Vdss): 40 V Gate Charge (Qg) (Max) @ Vgs: 160 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 5640 pF @ 10 V Grade: Automotive Qualification: AEC-Q101 |
на замовлення 7811 шт: термін постачання 21-31 дні (днів) |
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XPH4R10ANB,L1XHQ | Toshiba Semiconductor and Storage |
Description: MOSFET N-CH 100V 70A 8SOPPackaging: Tape & Reel (TR) Package / Case: 8-PowerVDFN Mounting Type: Surface Mount Operating Temperature: 175°C Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 70A (Ta) Rds On (Max) @ Id, Vgs: 4.1mOhm @ 35A, 10V Power Dissipation (Max): 960mW (Ta), 170W (Tc) Vgs(th) (Max) @ Id: 3.5V @ 1mA Supplier Device Package: 8-SOP Advance (5x5) Drive Voltage (Max Rds On, Min Rds On): 6V, 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 100 V Gate Charge (Qg) (Max) @ Vgs: 75 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 4970 pF @ 10 V Grade: Automotive Qualification: AEC-Q101 |
на замовлення 30000 шт: термін постачання 21-31 дні (днів) |
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XPH4R10ANB,L1XHQ | Toshiba Semiconductor and Storage |
Description: MOSFET N-CH 100V 70A 8SOPPackaging: Cut Tape (CT) Package / Case: 8-PowerVDFN Mounting Type: Surface Mount Operating Temperature: 175°C Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 70A (Ta) Rds On (Max) @ Id, Vgs: 4.1mOhm @ 35A, 10V Power Dissipation (Max): 960mW (Ta), 170W (Tc) Vgs(th) (Max) @ Id: 3.5V @ 1mA Supplier Device Package: 8-SOP Advance (5x5) Drive Voltage (Max Rds On, Min Rds On): 6V, 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 100 V Gate Charge (Qg) (Max) @ Vgs: 75 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 4970 pF @ 10 V Grade: Automotive Qualification: AEC-Q101 |
на замовлення 33237 шт: термін постачання 21-31 дні (днів) |
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DF2B7AE,H3F | Toshiba Semiconductor and Storage |
Description: TVS DIODE 5.5VWM 20VC ESCPackaging: Tape & Reel (TR) Package / Case: SC-79, SOD-523 Mounting Type: Surface Mount Type: Zener Operating Temperature: 150°C (TJ) Capacitance @ Frequency: 8.5pF @ 1MHz Current - Peak Pulse (10/1000µs): 4A (8/20µs) Voltage - Reverse Standoff (Typ): 5.5V (Max) Supplier Device Package: ESC Bidirectional Channels: 1 Voltage - Breakdown (Min): 5.8V Voltage - Clamping (Max) @ Ipp: 20V Power - Peak Pulse: 80W Power Line Protection: No |
на замовлення 16000 шт: термін постачання 21-31 дні (днів) |
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DF2B7AE,H3F | Toshiba Semiconductor and Storage |
Description: TVS DIODE 5.5VWM 20VC ESCPackaging: Cut Tape (CT) Package / Case: SC-79, SOD-523 Mounting Type: Surface Mount Type: Zener Operating Temperature: 150°C (TJ) Capacitance @ Frequency: 8.5pF @ 1MHz Current - Peak Pulse (10/1000µs): 4A (8/20µs) Voltage - Reverse Standoff (Typ): 5.5V (Max) Supplier Device Package: ESC Bidirectional Channels: 1 Voltage - Breakdown (Min): 5.8V Voltage - Clamping (Max) @ Ipp: 20V Power - Peak Pulse: 80W Power Line Protection: No |
на замовлення 21784 шт: термін постачання 21-31 дні (днів) |
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TK1K7A60F,S4X | Toshiba Semiconductor and Storage |
Description: X35 PB-F POWER MOSFET TRANSISTORPackaging: Tube Package / Case: TO-220-3 Full Pack Mounting Type: Through Hole Operating Temperature: 150°C Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 4A (Ta) Rds On (Max) @ Id, Vgs: 1.7Ohm @ 2A, 10V Power Dissipation (Max): 35W (Tc) Vgs(th) (Max) @ Id: 4V @ 460µA Supplier Device Package: TO-220SIS Part Status: Active Drive Voltage (Max Rds On, Min Rds On): 10V Vgs (Max): ±30V Drain to Source Voltage (Vdss): 600 V Gate Charge (Qg) (Max) @ Vgs: 16 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 560 pF @ 300 V |
на замовлення 1 шт: термін постачання 21-31 дні (днів) |
В кошику од. на суму грн. | ||||||||||||||||||
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TCR3RM10A,LF | Toshiba Semiconductor and Storage |
Description: IC REG LINEAR 1V 300MA 4DFNCPackaging: Tape & Reel (TR) Package / Case: 4-XDFN Exposed Pad Output Type: Fixed Mounting Type: Surface Mount Current - Output: 300mA Operating Temperature: -40°C ~ 85°C Output Configuration: Positive Voltage - Input (Max): 5.5V Number of Regulators: 1 Supplier Device Package: 4-DFNC (1x1) Voltage - Output (Min/Fixed): 1V Part Status: Obsolete PSRR: 100dB (1kHz) Voltage Dropout (Max): 0.13V @ 300mA Protection Features: Over Current, Over Temperature |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||||||||||||
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TCR3RM10A,LF | Toshiba Semiconductor and Storage |
Description: IC REG LINEAR 1V 300MA 4DFNCPackaging: Cut Tape (CT) Package / Case: 4-XDFN Exposed Pad Output Type: Fixed Mounting Type: Surface Mount Current - Output: 300mA Operating Temperature: -40°C ~ 85°C Output Configuration: Positive Voltage - Input (Max): 5.5V Number of Regulators: 1 Supplier Device Package: 4-DFNC (1x1) Voltage - Output (Min/Fixed): 1V Part Status: Obsolete PSRR: 100dB (1kHz) Voltage Dropout (Max): 0.13V @ 300mA Protection Features: Over Current, Over Temperature |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||||||||||||
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SSM6N68NU,LF | Toshiba Semiconductor and Storage |
Description: SMALL LOW RON DUAL NCH MOSFETS HPackaging: Tape & Reel (TR) Package / Case: 6-WDFN Exposed Pad Mounting Type: Surface Mount Configuration: 2 N-Channel (Dual) Operating Temperature: 150°C Technology: MOSFET (Metal Oxide) Power - Max: 2W (Ta) Drain to Source Voltage (Vdss): 30V Current - Continuous Drain (Id) @ 25°C: 4A (Ta) Input Capacitance (Ciss) (Max) @ Vds: 129pF @ 15V Rds On (Max) @ Id, Vgs: 84mOhm @ 2A, 4.5V Gate Charge (Qg) (Max) @ Vgs: 1.8nC @ 4.5V FET Feature: Logic Level Gate, 1.8V Drive Vgs(th) (Max) @ Id: 1V @ 1mA Supplier Device Package: 6-µDFN (2x2) Part Status: Active |
товару немає в наявності |
В кошику од. на суму грн. |
| RN4989FE,LF(CT |
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Виробник: Toshiba Semiconductor and Storage
Description: NPN + PNP BRT Q1BSR47KOHM Q1BER2
Packaging: Tape & Reel (TR)
Package / Case: SOT-563, SOT-666
Mounting Type: Surface Mount
Transistor Type: 1 NPN, 1 PNP - Pre-Biased (Dual)
Power - Max: 100mW
Current - Collector (Ic) (Max): 100mA
Voltage - Collector Emitter Breakdown (Max): 50V
Vce Saturation (Max) @ Ib, Ic: 300mV @ 250µA, 5mA
Current - Collector Cutoff (Max): 500nA
DC Current Gain (hFE) (Min) @ Ic, Vce: 70 @ 10mA, 5V
Frequency - Transition: 250MHz, 200MHz
Resistor - Base (R1): 47kOhms
Resistor - Emitter Base (R2): 22kOhms
Supplier Device Package: ES6
Description: NPN + PNP BRT Q1BSR47KOHM Q1BER2
Packaging: Tape & Reel (TR)
Package / Case: SOT-563, SOT-666
Mounting Type: Surface Mount
Transistor Type: 1 NPN, 1 PNP - Pre-Biased (Dual)
Power - Max: 100mW
Current - Collector (Ic) (Max): 100mA
Voltage - Collector Emitter Breakdown (Max): 50V
Vce Saturation (Max) @ Ib, Ic: 300mV @ 250µA, 5mA
Current - Collector Cutoff (Max): 500nA
DC Current Gain (hFE) (Min) @ Ic, Vce: 70 @ 10mA, 5V
Frequency - Transition: 250MHz, 200MHz
Resistor - Base (R1): 47kOhms
Resistor - Emitter Base (R2): 22kOhms
Supplier Device Package: ES6
на замовлення 4000 шт:
термін постачання 21-31 дні (днів)| Кількість | Ціна |
|---|---|
| 4000+ | 2.90 грн |
| RN4989FE,LF(CT |
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Виробник: Toshiba Semiconductor and Storage
Description: NPN + PNP BRT Q1BSR47KOHM Q1BER2
Packaging: Cut Tape (CT)
Package / Case: SOT-563, SOT-666
Mounting Type: Surface Mount
Transistor Type: 1 NPN, 1 PNP - Pre-Biased (Dual)
Power - Max: 100mW
Current - Collector (Ic) (Max): 100mA
Voltage - Collector Emitter Breakdown (Max): 50V
Vce Saturation (Max) @ Ib, Ic: 300mV @ 250µA, 5mA
Current - Collector Cutoff (Max): 500nA
DC Current Gain (hFE) (Min) @ Ic, Vce: 70 @ 10mA, 5V
Frequency - Transition: 250MHz, 200MHz
Resistor - Base (R1): 47kOhms
Resistor - Emitter Base (R2): 22kOhms
Supplier Device Package: ES6
Description: NPN + PNP BRT Q1BSR47KOHM Q1BER2
Packaging: Cut Tape (CT)
Package / Case: SOT-563, SOT-666
Mounting Type: Surface Mount
Transistor Type: 1 NPN, 1 PNP - Pre-Biased (Dual)
Power - Max: 100mW
Current - Collector (Ic) (Max): 100mA
Voltage - Collector Emitter Breakdown (Max): 50V
Vce Saturation (Max) @ Ib, Ic: 300mV @ 250µA, 5mA
Current - Collector Cutoff (Max): 500nA
DC Current Gain (hFE) (Min) @ Ic, Vce: 70 @ 10mA, 5V
Frequency - Transition: 250MHz, 200MHz
Resistor - Base (R1): 47kOhms
Resistor - Emitter Base (R2): 22kOhms
Supplier Device Package: ES6
на замовлення 4000 шт:
термін постачання 21-31 дні (днів)| Кількість | Ціна |
|---|---|
| 22+ | 14.76 грн |
| 34+ | 8.90 грн |
| 100+ | 5.51 грн |
| 500+ | 3.78 грн |
| 1000+ | 3.32 грн |
| 2000+ | 2.94 грн |
| TC74HC00AFELF |
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Виробник: Toshiba Semiconductor and Storage
Description: IC GATE NAND 4CH 2-INP 14SOP
Packaging: Tape & Reel (TR)
Package / Case: 14-SOIC (0.209", 5.30mm Width)
Mounting Type: Surface Mount
Logic Type: NAND Gate
Operating Temperature: -40°C ~ 85°C
Voltage - Supply: 2V ~ 6V
Current - Output High, Low: 5.2mA, 5.2mA
Number of Inputs: 2
Supplier Device Package: 14-SOP
Input Logic Level - High: 1.5V ~ 4.2V
Input Logic Level - Low: 0.5V ~ 1.8V
Max Propagation Delay @ V, Max CL: 13ns @ 6V, 50pF
Part Status: Not For New Designs
Number of Circuits: 4
Current - Quiescent (Max): 1 µA
Description: IC GATE NAND 4CH 2-INP 14SOP
Packaging: Tape & Reel (TR)
Package / Case: 14-SOIC (0.209", 5.30mm Width)
Mounting Type: Surface Mount
Logic Type: NAND Gate
Operating Temperature: -40°C ~ 85°C
Voltage - Supply: 2V ~ 6V
Current - Output High, Low: 5.2mA, 5.2mA
Number of Inputs: 2
Supplier Device Package: 14-SOP
Input Logic Level - High: 1.5V ~ 4.2V
Input Logic Level - Low: 0.5V ~ 1.8V
Max Propagation Delay @ V, Max CL: 13ns @ 6V, 50pF
Part Status: Not For New Designs
Number of Circuits: 4
Current - Quiescent (Max): 1 µA
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| TC78H653FTG,EL |
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Виробник: Toshiba Semiconductor and Storage
Description: IC MTR DRVR BIPOLR 1.8-7V 16VQON
Packaging: Tape & Reel (TR)
Package / Case: 16-VFQFN Exposed Pad
Mounting Type: Surface Mount
Function: Driver - Fully Integrated, Control and Power Stage
Current - Output: 4A
Operating Temperature: -40°C ~ 105°C
Output Configuration: Half Bridge (4)
Voltage - Supply: 1.8V ~ 7V
Applications: General Purpose
Technology: DMOS
Voltage - Load: 1.8V ~ 7V
Supplier Device Package: 16-VQFN (3x3)
Motor Type - Stepper: Bipolar
Motor Type - AC, DC: Brushed DC
Description: IC MTR DRVR BIPOLR 1.8-7V 16VQON
Packaging: Tape & Reel (TR)
Package / Case: 16-VFQFN Exposed Pad
Mounting Type: Surface Mount
Function: Driver - Fully Integrated, Control and Power Stage
Current - Output: 4A
Operating Temperature: -40°C ~ 105°C
Output Configuration: Half Bridge (4)
Voltage - Supply: 1.8V ~ 7V
Applications: General Purpose
Technology: DMOS
Voltage - Load: 1.8V ~ 7V
Supplier Device Package: 16-VQFN (3x3)
Motor Type - Stepper: Bipolar
Motor Type - AC, DC: Brushed DC
на замовлення 12000 шт:
термін постачання 21-31 дні (днів)| Кількість | Ціна |
|---|---|
| 4000+ | 42.31 грн |
| 8000+ | 39.90 грн |
| 12000+ | 39.48 грн |
| TC78H653FTG,EL |
![]() |
Виробник: Toshiba Semiconductor and Storage
Description: IC MTR DRVR BIPOLR 1.8-7V 16VQON
Packaging: Cut Tape (CT)
Package / Case: 16-VFQFN Exposed Pad
Mounting Type: Surface Mount
Function: Driver - Fully Integrated, Control and Power Stage
Current - Output: 4A
Operating Temperature: -40°C ~ 105°C
Output Configuration: Half Bridge (4)
Voltage - Supply: 1.8V ~ 7V
Applications: General Purpose
Technology: DMOS
Voltage - Load: 1.8V ~ 7V
Supplier Device Package: 16-VQFN (3x3)
Motor Type - Stepper: Bipolar
Motor Type - AC, DC: Brushed DC
Description: IC MTR DRVR BIPOLR 1.8-7V 16VQON
Packaging: Cut Tape (CT)
Package / Case: 16-VFQFN Exposed Pad
Mounting Type: Surface Mount
Function: Driver - Fully Integrated, Control and Power Stage
Current - Output: 4A
Operating Temperature: -40°C ~ 105°C
Output Configuration: Half Bridge (4)
Voltage - Supply: 1.8V ~ 7V
Applications: General Purpose
Technology: DMOS
Voltage - Load: 1.8V ~ 7V
Supplier Device Package: 16-VQFN (3x3)
Motor Type - Stepper: Bipolar
Motor Type - AC, DC: Brushed DC
на замовлення 18628 шт:
термін постачання 21-31 дні (днів)| Кількість | Ціна |
|---|---|
| 4+ | 87.80 грн |
| 10+ | 61.51 грн |
| 25+ | 55.76 грн |
| 100+ | 46.34 грн |
| 250+ | 43.49 грн |
| 500+ | 41.78 грн |
| 1000+ | 39.70 грн |
| SSM6K361NU,LF |
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Виробник: Toshiba Semiconductor and Storage
Description: MOSFET N-CH 100V 3.5A 6UDFNB
Packaging: Tape & Reel (TR)
Package / Case: 6-WDFN Exposed Pad
Mounting Type: Surface Mount
Operating Temperature: 150°C
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 3.5A (Ta)
Rds On (Max) @ Id, Vgs: 69mOhm @ 2A, 10V
Power Dissipation (Max): 1.25W (Ta)
Vgs(th) (Max) @ Id: 2.5V @ 100µA
Supplier Device Package: 6-UDFNB (2x2)
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 100 V
Gate Charge (Qg) (Max) @ Vgs: 3.2 nC @ 4.5 V
Input Capacitance (Ciss) (Max) @ Vds: 430 pF @ 15 V
Description: MOSFET N-CH 100V 3.5A 6UDFNB
Packaging: Tape & Reel (TR)
Package / Case: 6-WDFN Exposed Pad
Mounting Type: Surface Mount
Operating Temperature: 150°C
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 3.5A (Ta)
Rds On (Max) @ Id, Vgs: 69mOhm @ 2A, 10V
Power Dissipation (Max): 1.25W (Ta)
Vgs(th) (Max) @ Id: 2.5V @ 100µA
Supplier Device Package: 6-UDFNB (2x2)
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 100 V
Gate Charge (Qg) (Max) @ Vgs: 3.2 nC @ 4.5 V
Input Capacitance (Ciss) (Max) @ Vds: 430 pF @ 15 V
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од. на суму грн.
| SSM6K361NU,LF |
![]() |
Виробник: Toshiba Semiconductor and Storage
Description: MOSFET N-CH 100V 3.5A 6UDFNB
Packaging: Cut Tape (CT)
Package / Case: 6-WDFN Exposed Pad
Mounting Type: Surface Mount
Operating Temperature: 150°C
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 3.5A (Ta)
Rds On (Max) @ Id, Vgs: 69mOhm @ 2A, 10V
Power Dissipation (Max): 1.25W (Ta)
Vgs(th) (Max) @ Id: 2.5V @ 100µA
Supplier Device Package: 6-UDFNB (2x2)
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 100 V
Gate Charge (Qg) (Max) @ Vgs: 3.2 nC @ 4.5 V
Input Capacitance (Ciss) (Max) @ Vds: 430 pF @ 15 V
Description: MOSFET N-CH 100V 3.5A 6UDFNB
Packaging: Cut Tape (CT)
Package / Case: 6-WDFN Exposed Pad
Mounting Type: Surface Mount
Operating Temperature: 150°C
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 3.5A (Ta)
Rds On (Max) @ Id, Vgs: 69mOhm @ 2A, 10V
Power Dissipation (Max): 1.25W (Ta)
Vgs(th) (Max) @ Id: 2.5V @ 100µA
Supplier Device Package: 6-UDFNB (2x2)
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 100 V
Gate Charge (Qg) (Max) @ Vgs: 3.2 nC @ 4.5 V
Input Capacitance (Ciss) (Max) @ Vds: 430 pF @ 15 V
на замовлення 2324 шт:
термін постачання 21-31 дні (днів)| Кількість | Ціна |
|---|---|
| 7+ | 46.62 грн |
| 11+ | 27.91 грн |
| 100+ | 17.94 грн |
| 500+ | 12.78 грн |
| 1000+ | 11.48 грн |
| TLP3407SRH(TP,E |
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Виробник: Toshiba Semiconductor and Storage
Description: SSR RELAY SPST-NO 1A 0-60V
Packaging: Tape & Reel (TR)
Package / Case: 4-SMD (0.079", 2.00mm)
Output Type: AC, DC
Mounting Type: Surface Mount
Voltage - Input: 1.4VDC
Circuit: SPST-NO (1 Form A)
Termination Style: SMD (SMT) Tab
Load Current: 1 A
Supplier Device Package: S-VSON4T (2x1.45)
Part Status: Active
Voltage - Load: 0 V ~ 60 V
On-State Resistance (Max): 300 mOhms
Operating Temperature: -40°C ~ 110°C
Relay Type: Photo-Coupled Relay (Photorelay)
Description: SSR RELAY SPST-NO 1A 0-60V
Packaging: Tape & Reel (TR)
Package / Case: 4-SMD (0.079", 2.00mm)
Output Type: AC, DC
Mounting Type: Surface Mount
Voltage - Input: 1.4VDC
Circuit: SPST-NO (1 Form A)
Termination Style: SMD (SMT) Tab
Load Current: 1 A
Supplier Device Package: S-VSON4T (2x1.45)
Part Status: Active
Voltage - Load: 0 V ~ 60 V
On-State Resistance (Max): 300 mOhms
Operating Temperature: -40°C ~ 110°C
Relay Type: Photo-Coupled Relay (Photorelay)
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од. на суму грн.
| TLP3407SRH(TP,E |
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Виробник: Toshiba Semiconductor and Storage
Description: SSR RELAY SPST-NO 1A 0-60V
Packaging: Cut Tape (CT)
Package / Case: 4-SMD (0.079", 2.00mm)
Output Type: AC, DC
Mounting Type: Surface Mount
Voltage - Input: 1.4VDC
Circuit: SPST-NO (1 Form A)
Termination Style: SMD (SMT) Tab
Load Current: 1 A
Supplier Device Package: S-VSON4T (2x1.45)
Part Status: Active
Voltage - Load: 0 V ~ 60 V
On-State Resistance (Max): 300 mOhms
Operating Temperature: -40°C ~ 110°C
Relay Type: Photo-Coupled Relay (Photorelay)
Description: SSR RELAY SPST-NO 1A 0-60V
Packaging: Cut Tape (CT)
Package / Case: 4-SMD (0.079", 2.00mm)
Output Type: AC, DC
Mounting Type: Surface Mount
Voltage - Input: 1.4VDC
Circuit: SPST-NO (1 Form A)
Termination Style: SMD (SMT) Tab
Load Current: 1 A
Supplier Device Package: S-VSON4T (2x1.45)
Part Status: Active
Voltage - Load: 0 V ~ 60 V
On-State Resistance (Max): 300 mOhms
Operating Temperature: -40°C ~ 110°C
Relay Type: Photo-Coupled Relay (Photorelay)
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од. на суму грн.
| TLP3407SRL(TP,E |
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Виробник: Toshiba Semiconductor and Storage
Description: SSR RELAY SPST-NO 1A 0-60V
Packaging: Tape & Reel (TR)
Package / Case: 4-SMD (0.079", 2.00mm)
Output Type: AC, DC
Mounting Type: Surface Mount
Voltage - Input: 1.2VDC
Circuit: SPST-NO (1 Form A)
Termination Style: SMD (SMT) Tab
Load Current: 1 A
Supplier Device Package: S-VSON4T (2x1.45)
Part Status: Active
Voltage - Load: 0 V ~ 60 V
On-State Resistance (Max): 300 mOhms
Operating Temperature: -40°C ~ 110°C
Relay Type: Photo-Coupled Relay (Photorelay)
Description: SSR RELAY SPST-NO 1A 0-60V
Packaging: Tape & Reel (TR)
Package / Case: 4-SMD (0.079", 2.00mm)
Output Type: AC, DC
Mounting Type: Surface Mount
Voltage - Input: 1.2VDC
Circuit: SPST-NO (1 Form A)
Termination Style: SMD (SMT) Tab
Load Current: 1 A
Supplier Device Package: S-VSON4T (2x1.45)
Part Status: Active
Voltage - Load: 0 V ~ 60 V
On-State Resistance (Max): 300 mOhms
Operating Temperature: -40°C ~ 110°C
Relay Type: Photo-Coupled Relay (Photorelay)
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од. на суму грн.
| TLP3407SRL(TP,E |
![]() |
Виробник: Toshiba Semiconductor and Storage
Description: SSR RELAY SPST-NO 1A 0-60V
Packaging: Cut Tape (CT)
Package / Case: 4-SMD (0.079", 2.00mm)
Output Type: AC, DC
Mounting Type: Surface Mount
Voltage - Input: 1.2VDC
Circuit: SPST-NO (1 Form A)
Termination Style: SMD (SMT) Tab
Load Current: 1 A
Supplier Device Package: S-VSON4T (2x1.45)
Part Status: Active
Voltage - Load: 0 V ~ 60 V
On-State Resistance (Max): 300 mOhms
Operating Temperature: -40°C ~ 110°C
Relay Type: Photo-Coupled Relay (Photorelay)
Description: SSR RELAY SPST-NO 1A 0-60V
Packaging: Cut Tape (CT)
Package / Case: 4-SMD (0.079", 2.00mm)
Output Type: AC, DC
Mounting Type: Surface Mount
Voltage - Input: 1.2VDC
Circuit: SPST-NO (1 Form A)
Termination Style: SMD (SMT) Tab
Load Current: 1 A
Supplier Device Package: S-VSON4T (2x1.45)
Part Status: Active
Voltage - Load: 0 V ~ 60 V
On-State Resistance (Max): 300 mOhms
Operating Temperature: -40°C ~ 110°C
Relay Type: Photo-Coupled Relay (Photorelay)
на замовлення 1364 шт:
термін постачання 21-31 дні (днів)| Кількість | Ціна |
|---|---|
| 1+ | 410.27 грн |
| 10+ | 296.61 грн |
| 100+ | 238.67 грн |
| 500+ | 204.15 грн |
| TLP3407S(TP,E |
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Виробник: Toshiba Semiconductor and Storage
Description: SSR RELAY SPST-NO 1A 0-60V
Packaging: Tape & Reel (TR)
Package / Case: 4-SMD (0.079", 2.00mm)
Output Type: AC, DC
Mounting Type: Surface Mount
Voltage - Input: 1.26VDC
Circuit: SPST-NO (1 Form A)
Termination Style: SMD (SMT) Tab
Load Current: 1 A
Supplier Device Package: 4-S-VSON
Part Status: Active
Voltage - Load: 0 V ~ 60 V
On-State Resistance (Max): 300 mOhms
Operating Temperature: -40°C ~ 110°C
Relay Type: Photo-Coupled Relay (Photorelay)
Description: SSR RELAY SPST-NO 1A 0-60V
Packaging: Tape & Reel (TR)
Package / Case: 4-SMD (0.079", 2.00mm)
Output Type: AC, DC
Mounting Type: Surface Mount
Voltage - Input: 1.26VDC
Circuit: SPST-NO (1 Form A)
Termination Style: SMD (SMT) Tab
Load Current: 1 A
Supplier Device Package: 4-S-VSON
Part Status: Active
Voltage - Load: 0 V ~ 60 V
On-State Resistance (Max): 300 mOhms
Operating Temperature: -40°C ~ 110°C
Relay Type: Photo-Coupled Relay (Photorelay)
на замовлення 42500 шт:
термін постачання 21-31 дні (днів)| Кількість | Ціна |
|---|---|
| 2500+ | 163.41 грн |
| TLP3407S(TP,E |
![]() |
Виробник: Toshiba Semiconductor and Storage
Description: SSR RELAY SPST-NO 1A 0-60V
Packaging: Cut Tape (CT)
Package / Case: 4-SMD (0.079", 2.00mm)
Output Type: AC, DC
Mounting Type: Surface Mount
Voltage - Input: 1.26VDC
Circuit: SPST-NO (1 Form A)
Termination Style: SMD (SMT) Tab
Load Current: 1 A
Supplier Device Package: 4-S-VSON
Part Status: Active
Voltage - Load: 0 V ~ 60 V
On-State Resistance (Max): 300 mOhms
Operating Temperature: -40°C ~ 110°C
Relay Type: Photo-Coupled Relay (Photorelay)
Description: SSR RELAY SPST-NO 1A 0-60V
Packaging: Cut Tape (CT)
Package / Case: 4-SMD (0.079", 2.00mm)
Output Type: AC, DC
Mounting Type: Surface Mount
Voltage - Input: 1.26VDC
Circuit: SPST-NO (1 Form A)
Termination Style: SMD (SMT) Tab
Load Current: 1 A
Supplier Device Package: 4-S-VSON
Part Status: Active
Voltage - Load: 0 V ~ 60 V
On-State Resistance (Max): 300 mOhms
Operating Temperature: -40°C ~ 110°C
Relay Type: Photo-Coupled Relay (Photorelay)
на замовлення 44343 шт:
термін постачання 21-31 дні (днів)| Кількість | Ціна |
|---|---|
| 1+ | 338.01 грн |
| 10+ | 242.51 грн |
| 100+ | 193.42 грн |
| 500+ | 161.46 грн |
| TLP2372(TPL,E |
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Виробник: Toshiba Semiconductor and Storage
Description: OPTOISOLTR 3.75KV PUSH PULL 6-SO
Packaging: Tape & Reel (TR)
Package / Case: 6-SOIC (0.179", 4.55mm Width), 5 Leads
Output Type: Push-Pull, Totem Pole
Mounting Type: Surface Mount
Operating Temperature: -40°C ~ 125°C
Voltage - Supply: 2.2V ~ 5.5V
Voltage - Forward (Vf) (Typ): 1.53V
Data Rate: 20Mbps
Input Type: DC
Voltage - Isolation: 3750Vrms
Current - DC Forward (If) (Max): 8mA
Inputs - Side 1/Side 2: 1/0
Supplier Device Package: 6-SO, 5 Lead
Rise / Fall Time (Typ): 2.2ns, 1.6ns
Common Mode Transient Immunity (Min): 20kV/µs
Propagation Delay tpLH / tpHL (Max): 75ns, 75ns
Part Status: Active
Number of Channels: 1
Current - Output / Channel: 8 mA
Description: OPTOISOLTR 3.75KV PUSH PULL 6-SO
Packaging: Tape & Reel (TR)
Package / Case: 6-SOIC (0.179", 4.55mm Width), 5 Leads
Output Type: Push-Pull, Totem Pole
Mounting Type: Surface Mount
Operating Temperature: -40°C ~ 125°C
Voltage - Supply: 2.2V ~ 5.5V
Voltage - Forward (Vf) (Typ): 1.53V
Data Rate: 20Mbps
Input Type: DC
Voltage - Isolation: 3750Vrms
Current - DC Forward (If) (Max): 8mA
Inputs - Side 1/Side 2: 1/0
Supplier Device Package: 6-SO, 5 Lead
Rise / Fall Time (Typ): 2.2ns, 1.6ns
Common Mode Transient Immunity (Min): 20kV/µs
Propagation Delay tpLH / tpHL (Max): 75ns, 75ns
Part Status: Active
Number of Channels: 1
Current - Output / Channel: 8 mA
на замовлення 3000 шт:
термін постачання 21-31 дні (днів)| Кількість | Ціна |
|---|---|
| 3000+ | 49.61 грн |
| TLP2372(TPL,E |
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Виробник: Toshiba Semiconductor and Storage
Description: OPTOISOLTR 3.75KV PUSH PULL 6-SO
Packaging: Cut Tape (CT)
Package / Case: 6-SOIC (0.179", 4.55mm Width), 5 Leads
Output Type: Push-Pull, Totem Pole
Mounting Type: Surface Mount
Operating Temperature: -40°C ~ 125°C
Voltage - Supply: 2.2V ~ 5.5V
Voltage - Forward (Vf) (Typ): 1.53V
Data Rate: 20Mbps
Input Type: DC
Voltage - Isolation: 3750Vrms
Current - DC Forward (If) (Max): 8mA
Inputs - Side 1/Side 2: 1/0
Supplier Device Package: 6-SO, 5 Lead
Rise / Fall Time (Typ): 2.2ns, 1.6ns
Common Mode Transient Immunity (Min): 20kV/µs
Propagation Delay tpLH / tpHL (Max): 75ns, 75ns
Part Status: Active
Number of Channels: 1
Current - Output / Channel: 8 mA
Description: OPTOISOLTR 3.75KV PUSH PULL 6-SO
Packaging: Cut Tape (CT)
Package / Case: 6-SOIC (0.179", 4.55mm Width), 5 Leads
Output Type: Push-Pull, Totem Pole
Mounting Type: Surface Mount
Operating Temperature: -40°C ~ 125°C
Voltage - Supply: 2.2V ~ 5.5V
Voltage - Forward (Vf) (Typ): 1.53V
Data Rate: 20Mbps
Input Type: DC
Voltage - Isolation: 3750Vrms
Current - DC Forward (If) (Max): 8mA
Inputs - Side 1/Side 2: 1/0
Supplier Device Package: 6-SO, 5 Lead
Rise / Fall Time (Typ): 2.2ns, 1.6ns
Common Mode Transient Immunity (Min): 20kV/µs
Propagation Delay tpLH / tpHL (Max): 75ns, 75ns
Part Status: Active
Number of Channels: 1
Current - Output / Channel: 8 mA
на замовлення 4489 шт:
термін постачання 21-31 дні (днів)| Кількість | Ціна |
|---|---|
| 3+ | 121.99 грн |
| 10+ | 83.58 грн |
| 100+ | 63.38 грн |
| 500+ | 51.08 грн |
| 1000+ | 48.34 грн |
| TLP3553(F) |
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Виробник: Toshiba Semiconductor and Storage
Description: SSR RELAY SPST-NO 3A 0-20V
Packaging: Tube
Package / Case: 4-DIP (0.300", 7.62mm)
Output Type: AC, DC
Mounting Type: Through Hole
Voltage - Input: 1.33VDC
Circuit: SPST-NO (1 Form A)
Termination Style: PC Pin
Load Current: 3 A
Supplier Device Package: 4-DIP
Part Status: Active
Voltage - Load: 0 V ~ 20 V
On-State Resistance (Max): 80 mOhms
Operating Temperature: -40°C ~ 85°C
Approval Agency: CSA, cUL, UL
Relay Type: Photo-Coupled Relay (Photorelay)
Description: SSR RELAY SPST-NO 3A 0-20V
Packaging: Tube
Package / Case: 4-DIP (0.300", 7.62mm)
Output Type: AC, DC
Mounting Type: Through Hole
Voltage - Input: 1.33VDC
Circuit: SPST-NO (1 Form A)
Termination Style: PC Pin
Load Current: 3 A
Supplier Device Package: 4-DIP
Part Status: Active
Voltage - Load: 0 V ~ 20 V
On-State Resistance (Max): 80 mOhms
Operating Temperature: -40°C ~ 85°C
Approval Agency: CSA, cUL, UL
Relay Type: Photo-Coupled Relay (Photorelay)
на замовлення 88 шт:
термін постачання 21-31 дні (днів)| Кількість | Ціна |
|---|---|
| 2+ | 205.91 грн |
| 10+ | 176.74 грн |
| 25+ | 168.81 грн |
| 50+ | 152.98 грн |
| TPH1R306P1,L1Q |
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Виробник: Toshiba Semiconductor and Storage
Description: MOSFET N-CH 60V 100A 8SOP
Packaging: Tape & Reel (TR)
Package / Case: 8-PowerVDFN
Mounting Type: Surface Mount
Operating Temperature: 175°C
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 100A (Tc)
Rds On (Max) @ Id, Vgs: 1.28mOhm @ 50A, 10V
Power Dissipation (Max): 960mW (Ta), 170W (Tc)
Vgs(th) (Max) @ Id: 2.5V @ 1mA
Supplier Device Package: 8-SOP Advance (5x5)
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 60 V
Gate Charge (Qg) (Max) @ Vgs: 91 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 8100 pF @ 30 V
Description: MOSFET N-CH 60V 100A 8SOP
Packaging: Tape & Reel (TR)
Package / Case: 8-PowerVDFN
Mounting Type: Surface Mount
Operating Temperature: 175°C
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 100A (Tc)
Rds On (Max) @ Id, Vgs: 1.28mOhm @ 50A, 10V
Power Dissipation (Max): 960mW (Ta), 170W (Tc)
Vgs(th) (Max) @ Id: 2.5V @ 1mA
Supplier Device Package: 8-SOP Advance (5x5)
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 60 V
Gate Charge (Qg) (Max) @ Vgs: 91 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 8100 pF @ 30 V
на замовлення 5000 шт:
термін постачання 21-31 дні (днів)| Кількість | Ціна |
|---|---|
| 5000+ | 67.36 грн |
| TPH1R306P1,L1Q |
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Виробник: Toshiba Semiconductor and Storage
Description: MOSFET N-CH 60V 100A 8SOP
Packaging: Cut Tape (CT)
Package / Case: 8-PowerVDFN
Mounting Type: Surface Mount
Operating Temperature: 175°C
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 100A (Tc)
Rds On (Max) @ Id, Vgs: 1.28mOhm @ 50A, 10V
Power Dissipation (Max): 960mW (Ta), 170W (Tc)
Vgs(th) (Max) @ Id: 2.5V @ 1mA
Supplier Device Package: 8-SOP Advance (5x5)
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 60 V
Gate Charge (Qg) (Max) @ Vgs: 91 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 8100 pF @ 30 V
Description: MOSFET N-CH 60V 100A 8SOP
Packaging: Cut Tape (CT)
Package / Case: 8-PowerVDFN
Mounting Type: Surface Mount
Operating Temperature: 175°C
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 100A (Tc)
Rds On (Max) @ Id, Vgs: 1.28mOhm @ 50A, 10V
Power Dissipation (Max): 960mW (Ta), 170W (Tc)
Vgs(th) (Max) @ Id: 2.5V @ 1mA
Supplier Device Package: 8-SOP Advance (5x5)
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 60 V
Gate Charge (Qg) (Max) @ Vgs: 91 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 8100 pF @ 30 V
на замовлення 9539 шт:
термін постачання 21-31 дні (днів)| Кількість | Ціна |
|---|---|
| 2+ | 215.24 грн |
| 10+ | 134.84 грн |
| 100+ | 93.54 грн |
| 500+ | 74.51 грн |
| TLP2631(LF5,F) |
![]() |
Виробник: Toshiba Semiconductor and Storage
Description: OPTOISO 2.5KV 2CH OPN COLL 8-SMD
Packaging: Tube
Package / Case: 8-SMD, Gull Wing
Output Type: Open Collector, Schottky Clamped
Mounting Type: Surface Mount
Operating Temperature: -40°C ~ 85°C
Voltage - Supply: 4.5V ~ 5.5V
Voltage - Forward (Vf) (Typ): 1.65V
Data Rate: 10MBd
Input Type: DC
Voltage - Isolation: 2500Vrms
Current - DC Forward (If) (Max): 20mA
Inputs - Side 1/Side 2: 2/0
Supplier Device Package: 8-SMD
Rise / Fall Time (Typ): 30ns, 30ns
Common Mode Transient Immunity (Min): 1kV/µs
Propagation Delay tpLH / tpHL (Max): 75ns, 75ns
Number of Channels: 2
Current - Output / Channel: 16 mA
Description: OPTOISO 2.5KV 2CH OPN COLL 8-SMD
Packaging: Tube
Package / Case: 8-SMD, Gull Wing
Output Type: Open Collector, Schottky Clamped
Mounting Type: Surface Mount
Operating Temperature: -40°C ~ 85°C
Voltage - Supply: 4.5V ~ 5.5V
Voltage - Forward (Vf) (Typ): 1.65V
Data Rate: 10MBd
Input Type: DC
Voltage - Isolation: 2500Vrms
Current - DC Forward (If) (Max): 20mA
Inputs - Side 1/Side 2: 2/0
Supplier Device Package: 8-SMD
Rise / Fall Time (Typ): 30ns, 30ns
Common Mode Transient Immunity (Min): 1kV/µs
Propagation Delay tpLH / tpHL (Max): 75ns, 75ns
Number of Channels: 2
Current - Output / Channel: 16 mA
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| 7UL1G86FU,LF |
![]() |
Виробник: Toshiba Semiconductor and Storage
Description: IC GATE XOR 1CH 2-INP 5SSOP
Packaging: Tape & Reel (TR)
Package / Case: 5-TSSOP, SC-70-5, SOT-353
Mounting Type: Surface Mount
Logic Type: XOR (Exclusive OR)
Operating Temperature: -40°C ~ 85°C
Voltage - Supply: 0.9V ~ 3.6V
Current - Output High, Low: 8mA, 8mA
Number of Inputs: 2
Supplier Device Package: 5-SSOP
Input Logic Level - High: 0.75V ~ 2.48V
Input Logic Level - Low: 0.1V ~ 0.4V
Max Propagation Delay @ V, Max CL: 4.4ns @ 3.3V, 30pF
Number of Circuits: 1
Current - Quiescent (Max): 1 µA
Description: IC GATE XOR 1CH 2-INP 5SSOP
Packaging: Tape & Reel (TR)
Package / Case: 5-TSSOP, SC-70-5, SOT-353
Mounting Type: Surface Mount
Logic Type: XOR (Exclusive OR)
Operating Temperature: -40°C ~ 85°C
Voltage - Supply: 0.9V ~ 3.6V
Current - Output High, Low: 8mA, 8mA
Number of Inputs: 2
Supplier Device Package: 5-SSOP
Input Logic Level - High: 0.75V ~ 2.48V
Input Logic Level - Low: 0.1V ~ 0.4V
Max Propagation Delay @ V, Max CL: 4.4ns @ 3.3V, 30pF
Number of Circuits: 1
Current - Quiescent (Max): 1 µA
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В кошику
од. на суму грн.
| 7UL1G86FU,LF |
![]() |
Виробник: Toshiba Semiconductor and Storage
Description: IC GATE XOR 1CH 2-INP 5SSOP
Packaging: Cut Tape (CT)
Package / Case: 5-TSSOP, SC-70-5, SOT-353
Mounting Type: Surface Mount
Logic Type: XOR (Exclusive OR)
Operating Temperature: -40°C ~ 85°C
Voltage - Supply: 0.9V ~ 3.6V
Current - Output High, Low: 8mA, 8mA
Number of Inputs: 2
Supplier Device Package: 5-SSOP
Input Logic Level - High: 0.75V ~ 2.48V
Input Logic Level - Low: 0.1V ~ 0.4V
Max Propagation Delay @ V, Max CL: 4.4ns @ 3.3V, 30pF
Number of Circuits: 1
Current - Quiescent (Max): 1 µA
Description: IC GATE XOR 1CH 2-INP 5SSOP
Packaging: Cut Tape (CT)
Package / Case: 5-TSSOP, SC-70-5, SOT-353
Mounting Type: Surface Mount
Logic Type: XOR (Exclusive OR)
Operating Temperature: -40°C ~ 85°C
Voltage - Supply: 0.9V ~ 3.6V
Current - Output High, Low: 8mA, 8mA
Number of Inputs: 2
Supplier Device Package: 5-SSOP
Input Logic Level - High: 0.75V ~ 2.48V
Input Logic Level - Low: 0.1V ~ 0.4V
Max Propagation Delay @ V, Max CL: 4.4ns @ 3.3V, 30pF
Number of Circuits: 1
Current - Quiescent (Max): 1 µA
на замовлення 2774 шт:
термін постачання 21-31 дні (днів)| Кількість | Ціна |
|---|---|
| 12+ | 27.20 грн |
| 20+ | 15.41 грн |
| 25+ | 12.57 грн |
| 100+ | 8.79 грн |
| 250+ | 7.31 грн |
| 500+ | 6.40 грн |
| 1000+ | 5.54 грн |
| 7UL1G02FU,LF |
![]() |
Виробник: Toshiba Semiconductor and Storage
Description: IC GATE NOR 1CH 2-INP 5SSOP
Packaging: Tape & Reel (TR)
Package / Case: 5-TSSOP, SC-70-5, SOT-353
Mounting Type: Surface Mount
Logic Type: NOR Gate
Operating Temperature: -40°C ~ 85°C
Voltage - Supply: 0.9V ~ 3.6V
Current - Output High, Low: 8mA, 8mA
Number of Inputs: 2
Supplier Device Package: 5-SSOP
Input Logic Level - High: 0.75V ~ 2.48V
Input Logic Level - Low: 0.1V ~ 0.4V
Max Propagation Delay @ V, Max CL: 4.4ns @ 3.3V, 30pF
Number of Circuits: 1
Current - Quiescent (Max): 1 µA
Description: IC GATE NOR 1CH 2-INP 5SSOP
Packaging: Tape & Reel (TR)
Package / Case: 5-TSSOP, SC-70-5, SOT-353
Mounting Type: Surface Mount
Logic Type: NOR Gate
Operating Temperature: -40°C ~ 85°C
Voltage - Supply: 0.9V ~ 3.6V
Current - Output High, Low: 8mA, 8mA
Number of Inputs: 2
Supplier Device Package: 5-SSOP
Input Logic Level - High: 0.75V ~ 2.48V
Input Logic Level - Low: 0.1V ~ 0.4V
Max Propagation Delay @ V, Max CL: 4.4ns @ 3.3V, 30pF
Number of Circuits: 1
Current - Quiescent (Max): 1 µA
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В кошику
од. на суму грн.
| 7UL1G02FU,LF |
![]() |
Виробник: Toshiba Semiconductor and Storage
Description: IC GATE NOR 1CH 2-INP 5SSOP
Packaging: Cut Tape (CT)
Package / Case: 5-TSSOP, SC-70-5, SOT-353
Mounting Type: Surface Mount
Logic Type: NOR Gate
Operating Temperature: -40°C ~ 85°C
Voltage - Supply: 0.9V ~ 3.6V
Current - Output High, Low: 8mA, 8mA
Number of Inputs: 2
Supplier Device Package: 5-SSOP
Input Logic Level - High: 0.75V ~ 2.48V
Input Logic Level - Low: 0.1V ~ 0.4V
Max Propagation Delay @ V, Max CL: 4.4ns @ 3.3V, 30pF
Number of Circuits: 1
Current - Quiescent (Max): 1 µA
Description: IC GATE NOR 1CH 2-INP 5SSOP
Packaging: Cut Tape (CT)
Package / Case: 5-TSSOP, SC-70-5, SOT-353
Mounting Type: Surface Mount
Logic Type: NOR Gate
Operating Temperature: -40°C ~ 85°C
Voltage - Supply: 0.9V ~ 3.6V
Current - Output High, Low: 8mA, 8mA
Number of Inputs: 2
Supplier Device Package: 5-SSOP
Input Logic Level - High: 0.75V ~ 2.48V
Input Logic Level - Low: 0.1V ~ 0.4V
Max Propagation Delay @ V, Max CL: 4.4ns @ 3.3V, 30pF
Number of Circuits: 1
Current - Quiescent (Max): 1 µA
на замовлення 4940 шт:
термін постачання 21-31 дні (днів)| Кількість | Ціна |
|---|---|
| 12+ | 27.20 грн |
| 20+ | 15.34 грн |
| 25+ | 12.51 грн |
| 100+ | 8.74 грн |
| 250+ | 7.27 грн |
| 500+ | 6.36 грн |
| 1000+ | 5.51 грн |
| 7UL1G08FU,LF |
Виробник: Toshiba Semiconductor and Storage
Description: IC GATE AND 1CH 2-INP 5SSOP
Packaging: Tape & Reel (TR)
Package / Case: 5-TSSOP, SC-70-5, SOT-353
Mounting Type: Surface Mount
Logic Type: AND Gate
Operating Temperature: -40°C ~ 85°C
Voltage - Supply: 0.9V ~ 3.6V
Current - Output High, Low: 8mA, 8mA
Number of Inputs: 2
Supplier Device Package: 5-SSOP
Input Logic Level - High: 0.75V ~ 2.48V
Input Logic Level - Low: 0.1V ~ 0.4V
Max Propagation Delay @ V, Max CL: 4.4ns @ 3.3V, 30pF
Part Status: Active
Number of Circuits: 1
Current - Quiescent (Max): 1 µA
Description: IC GATE AND 1CH 2-INP 5SSOP
Packaging: Tape & Reel (TR)
Package / Case: 5-TSSOP, SC-70-5, SOT-353
Mounting Type: Surface Mount
Logic Type: AND Gate
Operating Temperature: -40°C ~ 85°C
Voltage - Supply: 0.9V ~ 3.6V
Current - Output High, Low: 8mA, 8mA
Number of Inputs: 2
Supplier Device Package: 5-SSOP
Input Logic Level - High: 0.75V ~ 2.48V
Input Logic Level - Low: 0.1V ~ 0.4V
Max Propagation Delay @ V, Max CL: 4.4ns @ 3.3V, 30pF
Part Status: Active
Number of Circuits: 1
Current - Quiescent (Max): 1 µA
на замовлення 3000 шт:
термін постачання 21-31 дні (днів)| Кількість | Ціна |
|---|---|
| 3000+ | 4.88 грн |
| 7UL1G08FU,LF |
Виробник: Toshiba Semiconductor and Storage
Description: IC GATE AND 1CH 2-INP 5SSOP
Packaging: Cut Tape (CT)
Package / Case: 5-TSSOP, SC-70-5, SOT-353
Mounting Type: Surface Mount
Logic Type: AND Gate
Operating Temperature: -40°C ~ 85°C
Voltage - Supply: 0.9V ~ 3.6V
Current - Output High, Low: 8mA, 8mA
Number of Inputs: 2
Supplier Device Package: 5-SSOP
Input Logic Level - High: 0.75V ~ 2.48V
Input Logic Level - Low: 0.1V ~ 0.4V
Max Propagation Delay @ V, Max CL: 4.4ns @ 3.3V, 30pF
Part Status: Active
Number of Circuits: 1
Current - Quiescent (Max): 1 µA
Description: IC GATE AND 1CH 2-INP 5SSOP
Packaging: Cut Tape (CT)
Package / Case: 5-TSSOP, SC-70-5, SOT-353
Mounting Type: Surface Mount
Logic Type: AND Gate
Operating Temperature: -40°C ~ 85°C
Voltage - Supply: 0.9V ~ 3.6V
Current - Output High, Low: 8mA, 8mA
Number of Inputs: 2
Supplier Device Package: 5-SSOP
Input Logic Level - High: 0.75V ~ 2.48V
Input Logic Level - Low: 0.1V ~ 0.4V
Max Propagation Delay @ V, Max CL: 4.4ns @ 3.3V, 30pF
Part Status: Active
Number of Circuits: 1
Current - Quiescent (Max): 1 µA
на замовлення 3385 шт:
термін постачання 21-31 дні (днів)| Кількість | Ціна |
|---|---|
| 12+ | 26.42 грн |
| 16+ | 18.78 грн |
| 25+ | 16.43 грн |
| 100+ | 9.99 грн |
| 250+ | 8.26 грн |
| 500+ | 6.61 грн |
| 1000+ | 4.99 грн |
| 7UL1G32FU,LF |
Виробник: Toshiba Semiconductor and Storage
Description: IC GATE OR 1CH 2-INP 5SSOP
Packaging: Tape & Reel (TR)
Package / Case: 5-TSSOP, SC-70-5, SOT-353
Mounting Type: Surface Mount
Logic Type: OR Gate
Operating Temperature: -40°C ~ 85°C
Voltage - Supply: 0.9V ~ 3.6V
Current - Output High, Low: 8mA, 8mA
Number of Inputs: 2
Supplier Device Package: 5-SSOP
Input Logic Level - High: 0.75V ~ 2.48V
Input Logic Level - Low: 0.1V ~ 0.4V
Max Propagation Delay @ V, Max CL: 4.4ns @ 3.3V, 30pF
Part Status: Active
Number of Circuits: 1
Current - Quiescent (Max): 1 µA
Description: IC GATE OR 1CH 2-INP 5SSOP
Packaging: Tape & Reel (TR)
Package / Case: 5-TSSOP, SC-70-5, SOT-353
Mounting Type: Surface Mount
Logic Type: OR Gate
Operating Temperature: -40°C ~ 85°C
Voltage - Supply: 0.9V ~ 3.6V
Current - Output High, Low: 8mA, 8mA
Number of Inputs: 2
Supplier Device Package: 5-SSOP
Input Logic Level - High: 0.75V ~ 2.48V
Input Logic Level - Low: 0.1V ~ 0.4V
Max Propagation Delay @ V, Max CL: 4.4ns @ 3.3V, 30pF
Part Status: Active
Number of Circuits: 1
Current - Quiescent (Max): 1 µA
на замовлення 3000 шт:
термін постачання 21-31 дні (днів)| Кількість | Ціна |
|---|---|
| 3000+ | 4.88 грн |
| 7UL1G32FU,LF |
Виробник: Toshiba Semiconductor and Storage
Description: IC GATE OR 1CH 2-INP 5SSOP
Packaging: Cut Tape (CT)
Package / Case: 5-TSSOP, SC-70-5, SOT-353
Mounting Type: Surface Mount
Logic Type: OR Gate
Operating Temperature: -40°C ~ 85°C
Voltage - Supply: 0.9V ~ 3.6V
Current - Output High, Low: 8mA, 8mA
Number of Inputs: 2
Supplier Device Package: 5-SSOP
Input Logic Level - High: 0.75V ~ 2.48V
Input Logic Level - Low: 0.1V ~ 0.4V
Max Propagation Delay @ V, Max CL: 4.4ns @ 3.3V, 30pF
Part Status: Active
Number of Circuits: 1
Current - Quiescent (Max): 1 µA
Description: IC GATE OR 1CH 2-INP 5SSOP
Packaging: Cut Tape (CT)
Package / Case: 5-TSSOP, SC-70-5, SOT-353
Mounting Type: Surface Mount
Logic Type: OR Gate
Operating Temperature: -40°C ~ 85°C
Voltage - Supply: 0.9V ~ 3.6V
Current - Output High, Low: 8mA, 8mA
Number of Inputs: 2
Supplier Device Package: 5-SSOP
Input Logic Level - High: 0.75V ~ 2.48V
Input Logic Level - Low: 0.1V ~ 0.4V
Max Propagation Delay @ V, Max CL: 4.4ns @ 3.3V, 30pF
Part Status: Active
Number of Circuits: 1
Current - Quiescent (Max): 1 µA
на замовлення 3410 шт:
термін постачання 21-31 дні (днів)| Кількість | Ціна |
|---|---|
| 12+ | 26.42 грн |
| 16+ | 18.78 грн |
| 25+ | 16.43 грн |
| 100+ | 9.99 грн |
| 250+ | 8.26 грн |
| 500+ | 6.61 грн |
| 1000+ | 4.99 грн |
| 7UL1G04FU,LF |
Виробник: Toshiba Semiconductor and Storage
Description: IC INVERTER 1CH 1-INP 5SSOP
Packaging: Tape & Reel (TR)
Package / Case: 5-TSSOP, SC-70-5, SOT-353
Mounting Type: Surface Mount
Logic Type: Inverter
Operating Temperature: -40°C ~ 125°C
Voltage - Supply: 0.9V ~ 3.6V
Current - Output High, Low: 8mA, 8mA
Number of Inputs: 1
Supplier Device Package: 5-SSOP
Input Logic Level - High: 0.75V ~ 2.48V
Input Logic Level - Low: 0.1V ~ 0.4V
Max Propagation Delay @ V, Max CL: 4.4ns @ 3.3V, 30pF
Part Status: Active
Number of Circuits: 1
Current - Quiescent (Max): 1 µA
Description: IC INVERTER 1CH 1-INP 5SSOP
Packaging: Tape & Reel (TR)
Package / Case: 5-TSSOP, SC-70-5, SOT-353
Mounting Type: Surface Mount
Logic Type: Inverter
Operating Temperature: -40°C ~ 125°C
Voltage - Supply: 0.9V ~ 3.6V
Current - Output High, Low: 8mA, 8mA
Number of Inputs: 1
Supplier Device Package: 5-SSOP
Input Logic Level - High: 0.75V ~ 2.48V
Input Logic Level - Low: 0.1V ~ 0.4V
Max Propagation Delay @ V, Max CL: 4.4ns @ 3.3V, 30pF
Part Status: Active
Number of Circuits: 1
Current - Quiescent (Max): 1 µA
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В кошику
од. на суму грн.
| 7UL1G04FU,LF |
Виробник: Toshiba Semiconductor and Storage
Description: IC INVERTER 1CH 1-INP 5SSOP
Packaging: Cut Tape (CT)
Package / Case: 5-TSSOP, SC-70-5, SOT-353
Mounting Type: Surface Mount
Logic Type: Inverter
Operating Temperature: -40°C ~ 125°C
Voltage - Supply: 0.9V ~ 3.6V
Current - Output High, Low: 8mA, 8mA
Number of Inputs: 1
Supplier Device Package: 5-SSOP
Input Logic Level - High: 0.75V ~ 2.48V
Input Logic Level - Low: 0.1V ~ 0.4V
Max Propagation Delay @ V, Max CL: 4.4ns @ 3.3V, 30pF
Part Status: Active
Number of Circuits: 1
Current - Quiescent (Max): 1 µA
Description: IC INVERTER 1CH 1-INP 5SSOP
Packaging: Cut Tape (CT)
Package / Case: 5-TSSOP, SC-70-5, SOT-353
Mounting Type: Surface Mount
Logic Type: Inverter
Operating Temperature: -40°C ~ 125°C
Voltage - Supply: 0.9V ~ 3.6V
Current - Output High, Low: 8mA, 8mA
Number of Inputs: 1
Supplier Device Package: 5-SSOP
Input Logic Level - High: 0.75V ~ 2.48V
Input Logic Level - Low: 0.1V ~ 0.4V
Max Propagation Delay @ V, Max CL: 4.4ns @ 3.3V, 30pF
Part Status: Active
Number of Circuits: 1
Current - Quiescent (Max): 1 µA
на замовлення 2854 шт:
термін постачання 21-31 дні (днів)| Кількість | Ціна |
|---|---|
| 10+ | 31.86 грн |
| 13+ | 23.20 грн |
| 25+ | 20.89 грн |
| 100+ | 13.55 грн |
| 250+ | 11.41 грн |
| 500+ | 9.27 грн |
| 1000+ | 7.01 грн |
| 7UL1G34FU,LF |
![]() |
Виробник: Toshiba Semiconductor and Storage
Description: IC BUFFER NON-INVERT 3.6V USV
Packaging: Tape & Reel (TR)
Package / Case: 5-TSSOP, SC-70-5, SOT-353
Mounting Type: Surface Mount
Number of Elements: 1
Logic Type: Buffer, Non-Inverting
Operating Temperature: -40°C ~ 85°C
Voltage - Supply: 0.9V ~ 3.6V
Number of Bits per Element: 1
Current - Output High, Low: 8mA, 8mA
Supplier Device Package: 5-SSOP
Description: IC BUFFER NON-INVERT 3.6V USV
Packaging: Tape & Reel (TR)
Package / Case: 5-TSSOP, SC-70-5, SOT-353
Mounting Type: Surface Mount
Number of Elements: 1
Logic Type: Buffer, Non-Inverting
Operating Temperature: -40°C ~ 85°C
Voltage - Supply: 0.9V ~ 3.6V
Number of Bits per Element: 1
Current - Output High, Low: 8mA, 8mA
Supplier Device Package: 5-SSOP
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В кошику
од. на суму грн.
| 7UL1G34FU,LF |
![]() |
Виробник: Toshiba Semiconductor and Storage
Description: IC BUFFER NON-INVERT 3.6V USV
Packaging: Cut Tape (CT)
Package / Case: 5-TSSOP, SC-70-5, SOT-353
Mounting Type: Surface Mount
Number of Elements: 1
Logic Type: Buffer, Non-Inverting
Operating Temperature: -40°C ~ 85°C
Voltage - Supply: 0.9V ~ 3.6V
Number of Bits per Element: 1
Current - Output High, Low: 8mA, 8mA
Supplier Device Package: 5-SSOP
Description: IC BUFFER NON-INVERT 3.6V USV
Packaging: Cut Tape (CT)
Package / Case: 5-TSSOP, SC-70-5, SOT-353
Mounting Type: Surface Mount
Number of Elements: 1
Logic Type: Buffer, Non-Inverting
Operating Temperature: -40°C ~ 85°C
Voltage - Supply: 0.9V ~ 3.6V
Number of Bits per Element: 1
Current - Output High, Low: 8mA, 8mA
Supplier Device Package: 5-SSOP
на замовлення 2900 шт:
термін постачання 21-31 дні (днів)| Кількість | Ціна |
|---|---|
| 23+ | 13.99 грн |
| 33+ | 9.20 грн |
| 37+ | 8.14 грн |
| 100+ | 6.51 грн |
| 250+ | 5.97 грн |
| 500+ | 5.65 грн |
| 1000+ | 5.29 грн |
| 7UL1G04FS,LF |
![]() |
Виробник: Toshiba Semiconductor and Storage
Description: IC INVERTER 1CH 1-INP FSV
Packaging: Tape & Reel (TR)
Package / Case: SOT-953
Mounting Type: Surface Mount
Logic Type: Inverter
Operating Temperature: -40°C ~ 125°C
Voltage - Supply: 0.9V ~ 3.6V
Current - Output High, Low: 8mA, 8mA
Number of Inputs: 1
Supplier Device Package: fSV
Input Logic Level - High: 0.75V ~ 2.48V
Input Logic Level - Low: 0.1V ~ 0.4V
Max Propagation Delay @ V, Max CL: 4.4ns @ 3.3V, 30pF
Part Status: Active
Number of Circuits: 1
Current - Quiescent (Max): 1 µA
Description: IC INVERTER 1CH 1-INP FSV
Packaging: Tape & Reel (TR)
Package / Case: SOT-953
Mounting Type: Surface Mount
Logic Type: Inverter
Operating Temperature: -40°C ~ 125°C
Voltage - Supply: 0.9V ~ 3.6V
Current - Output High, Low: 8mA, 8mA
Number of Inputs: 1
Supplier Device Package: fSV
Input Logic Level - High: 0.75V ~ 2.48V
Input Logic Level - Low: 0.1V ~ 0.4V
Max Propagation Delay @ V, Max CL: 4.4ns @ 3.3V, 30pF
Part Status: Active
Number of Circuits: 1
Current - Quiescent (Max): 1 µA
товару немає в наявності
В кошику
од. на суму грн.
| 7UL1G04FS,LF |
![]() |
Виробник: Toshiba Semiconductor and Storage
Description: IC INVERTER 1CH 1-INP FSV
Packaging: Cut Tape (CT)
Package / Case: SOT-953
Mounting Type: Surface Mount
Logic Type: Inverter
Operating Temperature: -40°C ~ 125°C
Voltage - Supply: 0.9V ~ 3.6V
Current - Output High, Low: 8mA, 8mA
Number of Inputs: 1
Supplier Device Package: fSV
Input Logic Level - High: 0.75V ~ 2.48V
Input Logic Level - Low: 0.1V ~ 0.4V
Max Propagation Delay @ V, Max CL: 4.4ns @ 3.3V, 30pF
Part Status: Active
Number of Circuits: 1
Current - Quiescent (Max): 1 µA
Description: IC INVERTER 1CH 1-INP FSV
Packaging: Cut Tape (CT)
Package / Case: SOT-953
Mounting Type: Surface Mount
Logic Type: Inverter
Operating Temperature: -40°C ~ 125°C
Voltage - Supply: 0.9V ~ 3.6V
Current - Output High, Low: 8mA, 8mA
Number of Inputs: 1
Supplier Device Package: fSV
Input Logic Level - High: 0.75V ~ 2.48V
Input Logic Level - Low: 0.1V ~ 0.4V
Max Propagation Delay @ V, Max CL: 4.4ns @ 3.3V, 30pF
Part Status: Active
Number of Circuits: 1
Current - Quiescent (Max): 1 µA
на замовлення 9850 шт:
термін постачання 21-31 дні (днів)| Кількість | Ціна |
|---|---|
| 10+ | 31.86 грн |
| 13+ | 23.20 грн |
| 25+ | 20.89 грн |
| 100+ | 13.55 грн |
| 250+ | 11.41 грн |
| 500+ | 9.27 грн |
| 1000+ | 7.01 грн |
| 2500+ | 6.31 грн |
| 5000+ | 5.96 грн |
| 7UL1G126FS,LF |
![]() |
Виробник: Toshiba Semiconductor and Storage
Description: IC BUFFER NON-INVERT 3.6V FSV
Packaging: Tape & Reel (TR)
Package / Case: SOT-953
Output Type: 3-State
Mounting Type: Surface Mount
Number of Elements: 1
Logic Type: Buffer, Non-Inverting
Operating Temperature: -40°C ~ 85°C
Voltage - Supply: 0.9V ~ 3.6V
Number of Bits per Element: 1
Current - Output High, Low: 8mA, 8mA
Supplier Device Package: fSV
Part Status: Active
Description: IC BUFFER NON-INVERT 3.6V FSV
Packaging: Tape & Reel (TR)
Package / Case: SOT-953
Output Type: 3-State
Mounting Type: Surface Mount
Number of Elements: 1
Logic Type: Buffer, Non-Inverting
Operating Temperature: -40°C ~ 85°C
Voltage - Supply: 0.9V ~ 3.6V
Number of Bits per Element: 1
Current - Output High, Low: 8mA, 8mA
Supplier Device Package: fSV
Part Status: Active
на замовлення 30000 шт:
термін постачання 21-31 дні (днів)| Кількість | Ціна |
|---|---|
| 10000+ | 5.11 грн |
| 20000+ | 4.62 грн |
| 7UL1G126FS,LF |
![]() |
Виробник: Toshiba Semiconductor and Storage
Description: IC BUFFER NON-INVERT 3.6V FSV
Packaging: Cut Tape (CT)
Package / Case: SOT-953
Output Type: 3-State
Mounting Type: Surface Mount
Number of Elements: 1
Logic Type: Buffer, Non-Inverting
Operating Temperature: -40°C ~ 85°C
Voltage - Supply: 0.9V ~ 3.6V
Number of Bits per Element: 1
Current - Output High, Low: 8mA, 8mA
Supplier Device Package: fSV
Part Status: Active
Description: IC BUFFER NON-INVERT 3.6V FSV
Packaging: Cut Tape (CT)
Package / Case: SOT-953
Output Type: 3-State
Mounting Type: Surface Mount
Number of Elements: 1
Logic Type: Buffer, Non-Inverting
Operating Temperature: -40°C ~ 85°C
Voltage - Supply: 0.9V ~ 3.6V
Number of Bits per Element: 1
Current - Output High, Low: 8mA, 8mA
Supplier Device Package: fSV
Part Status: Active
на замовлення 36609 шт:
термін постачання 21-31 дні (днів)| Кількість | Ціна |
|---|---|
| 9+ | 35.74 грн |
| 15+ | 20.43 грн |
| 25+ | 16.76 грн |
| 100+ | 11.84 грн |
| 250+ | 9.92 грн |
| 500+ | 8.73 грн |
| 1000+ | 7.61 грн |
| 2500+ | 6.55 грн |
| 5000+ | 5.90 грн |
| RN1112MFV,L3F |
![]() |
Виробник: Toshiba Semiconductor and Storage
Description: TRANS PREBIAS NPN 50V 0.1A VESM
Packaging: Tape & Reel (TR)
Package / Case: SOT-723
Mounting Type: Surface Mount
Transistor Type: NPN - Pre-Biased
Vce Saturation (Max) @ Ib, Ic: 300mV @ 500µA, 5mA
Current - Collector Cutoff (Max): 100nA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce: 120 @ 1mA, 5V
Supplier Device Package: VESM
Current - Collector (Ic) (Max): 100 mA
Voltage - Collector Emitter Breakdown (Max): 50 V
Power - Max: 150 mW
Resistor - Base (R1): 22 kOhms
Description: TRANS PREBIAS NPN 50V 0.1A VESM
Packaging: Tape & Reel (TR)
Package / Case: SOT-723
Mounting Type: Surface Mount
Transistor Type: NPN - Pre-Biased
Vce Saturation (Max) @ Ib, Ic: 300mV @ 500µA, 5mA
Current - Collector Cutoff (Max): 100nA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce: 120 @ 1mA, 5V
Supplier Device Package: VESM
Current - Collector (Ic) (Max): 100 mA
Voltage - Collector Emitter Breakdown (Max): 50 V
Power - Max: 150 mW
Resistor - Base (R1): 22 kOhms
на замовлення 8000 шт:
термін постачання 21-31 дні (днів)| Кількість | Ціна |
|---|---|
| 8000+ | 1.60 грн |
| RN1112MFV,L3F |
![]() |
Виробник: Toshiba Semiconductor and Storage
Description: TRANS PREBIAS NPN 50V 0.1A VESM
Packaging: Cut Tape (CT)
Package / Case: SOT-723
Mounting Type: Surface Mount
Transistor Type: NPN - Pre-Biased
Vce Saturation (Max) @ Ib, Ic: 300mV @ 500µA, 5mA
Current - Collector Cutoff (Max): 100nA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce: 120 @ 1mA, 5V
Supplier Device Package: VESM
Current - Collector (Ic) (Max): 100 mA
Voltage - Collector Emitter Breakdown (Max): 50 V
Power - Max: 150 mW
Resistor - Base (R1): 22 kOhms
Description: TRANS PREBIAS NPN 50V 0.1A VESM
Packaging: Cut Tape (CT)
Package / Case: SOT-723
Mounting Type: Surface Mount
Transistor Type: NPN - Pre-Biased
Vce Saturation (Max) @ Ib, Ic: 300mV @ 500µA, 5mA
Current - Collector Cutoff (Max): 100nA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce: 120 @ 1mA, 5V
Supplier Device Package: VESM
Current - Collector (Ic) (Max): 100 mA
Voltage - Collector Emitter Breakdown (Max): 50 V
Power - Max: 150 mW
Resistor - Base (R1): 22 kOhms
на замовлення 8000 шт:
термін постачання 21-31 дні (днів)| Кількість | Ціна |
|---|---|
| 45+ | 6.99 грн |
| 64+ | 4.71 грн |
| 100+ | 3.15 грн |
| 500+ | 2.24 грн |
| 1000+ | 1.99 грн |
| 2000+ | 1.78 грн |
| RN1113,LF(CT |
![]() |
Виробник: Toshiba Semiconductor and Storage
Description: TRANS PREBIAS NPN 50V 0.1A SSM
Description: TRANS PREBIAS NPN 50V 0.1A SSM
на замовлення 3000 шт:
термін постачання 21-31 дні (днів)В кошику од. на суму грн.
| RN1113,LF(CT |
![]() |
Виробник: Toshiba Semiconductor and Storage
Description: TRANS PREBIAS NPN 50V 0.1A SSM
Description: TRANS PREBIAS NPN 50V 0.1A SSM
на замовлення 3000 шт:
термін постачання 21-31 дні (днів)В кошику од. на суму грн.
| RN1112(TE85L,F) |
![]() |
Виробник: Toshiba Semiconductor and Storage
Description: TRANS PREBIAS NPN 50V 0.1A SSM
Description: TRANS PREBIAS NPN 50V 0.1A SSM
на замовлення 3000 шт:
термін постачання 21-31 дні (днів)В кошику од. на суму грн.
| RN1117(TE85L,F) |
![]() |
Виробник: Toshiba Semiconductor and Storage
Description: TRANS PREBIAS NPN 50V 0.1A SSM
Packaging: Tape & Reel (TR)
Package / Case: SC-75, SOT-416
Mounting Type: Surface Mount
Transistor Type: NPN - Pre-Biased
Vce Saturation (Max) @ Ib, Ic: 300mV @ 250µA, 5mA
Current - Collector Cutoff (Max): 500nA
DC Current Gain (hFE) (Min) @ Ic, Vce: 30 @ 10mA, 5V
Supplier Device Package: SSM
Part Status: Active
Current - Collector (Ic) (Max): 100 mA
Voltage - Collector Emitter Breakdown (Max): 50 V
Power - Max: 100 mW
Frequency - Transition: 250 MHz
Resistor - Base (R1): 10 kOhms
Resistor - Emitter Base (R2): 4.7 kOhms
Description: TRANS PREBIAS NPN 50V 0.1A SSM
Packaging: Tape & Reel (TR)
Package / Case: SC-75, SOT-416
Mounting Type: Surface Mount
Transistor Type: NPN - Pre-Biased
Vce Saturation (Max) @ Ib, Ic: 300mV @ 250µA, 5mA
Current - Collector Cutoff (Max): 500nA
DC Current Gain (hFE) (Min) @ Ic, Vce: 30 @ 10mA, 5V
Supplier Device Package: SSM
Part Status: Active
Current - Collector (Ic) (Max): 100 mA
Voltage - Collector Emitter Breakdown (Max): 50 V
Power - Max: 100 mW
Frequency - Transition: 250 MHz
Resistor - Base (R1): 10 kOhms
Resistor - Emitter Base (R2): 4.7 kOhms
товару немає в наявності
В кошику
од. на суму грн.
| RN1117(TE85L,F) |
![]() |
Виробник: Toshiba Semiconductor and Storage
Description: TRANS PREBIAS NPN 50V 0.1A SSM
Packaging: Cut Tape (CT)
Package / Case: SC-75, SOT-416
Mounting Type: Surface Mount
Transistor Type: NPN - Pre-Biased
Vce Saturation (Max) @ Ib, Ic: 300mV @ 250µA, 5mA
Current - Collector Cutoff (Max): 500nA
DC Current Gain (hFE) (Min) @ Ic, Vce: 30 @ 10mA, 5V
Supplier Device Package: SSM
Part Status: Active
Current - Collector (Ic) (Max): 100 mA
Voltage - Collector Emitter Breakdown (Max): 50 V
Power - Max: 100 mW
Frequency - Transition: 250 MHz
Resistor - Base (R1): 10 kOhms
Resistor - Emitter Base (R2): 4.7 kOhms
Description: TRANS PREBIAS NPN 50V 0.1A SSM
Packaging: Cut Tape (CT)
Package / Case: SC-75, SOT-416
Mounting Type: Surface Mount
Transistor Type: NPN - Pre-Biased
Vce Saturation (Max) @ Ib, Ic: 300mV @ 250µA, 5mA
Current - Collector Cutoff (Max): 500nA
DC Current Gain (hFE) (Min) @ Ic, Vce: 30 @ 10mA, 5V
Supplier Device Package: SSM
Part Status: Active
Current - Collector (Ic) (Max): 100 mA
Voltage - Collector Emitter Breakdown (Max): 50 V
Power - Max: 100 mW
Frequency - Transition: 250 MHz
Resistor - Base (R1): 10 kOhms
Resistor - Emitter Base (R2): 4.7 kOhms
на замовлення 898 шт:
термін постачання 21-31 дні (днів)| Кількість | Ціна |
|---|---|
| 23+ | 13.99 грн |
| 34+ | 8.98 грн |
| 100+ | 6.05 грн |
| 500+ | 4.34 грн |
| RN1118(TE85L,F) |
![]() |
Виробник: Toshiba Semiconductor and Storage
Description: TRANS PREBIAS NPN 50V 0.1A SSM
Description: TRANS PREBIAS NPN 50V 0.1A SSM
товару немає в наявності
В кошику
од. на суму грн.
| RN1118(TE85L,F) |
![]() |
Виробник: Toshiba Semiconductor and Storage
Description: TRANS PREBIAS NPN 50V 0.1A SSM
Description: TRANS PREBIAS NPN 50V 0.1A SSM
на замовлення 2970 шт:
термін постачання 21-31 дні (днів)| Кількість | Ціна |
|---|---|
| 11+ | 28.75 грн |
| 13+ | 23.05 грн |
| 100+ | 12.23 грн |
| 500+ | 7.55 грн |
| 1000+ | 5.13 грн |
| RN1115MFV,L3F |
![]() |
Виробник: Toshiba Semiconductor and Storage
Description: TRANS PREBIAS NPN 50V 0.1A VESM
Packaging: Tape & Reel (TR)
Package / Case: SOT-723
Mounting Type: Surface Mount
Transistor Type: NPN - Pre-Biased
Vce Saturation (Max) @ Ib, Ic: 300mV @ 250µA, 5mA
Current - Collector Cutoff (Max): 500nA
DC Current Gain (hFE) (Min) @ Ic, Vce: 50 @ 10mA, 5V
Supplier Device Package: VESM
Current - Collector (Ic) (Max): 100 mA
Voltage - Collector Emitter Breakdown (Max): 50 V
Power - Max: 150 mW
Frequency - Transition: 250 MHz
Resistor - Base (R1): 2.2 kOhms
Resistor - Emitter Base (R2): 10 kOhms
Resistors Included: R1 and R2
Description: TRANS PREBIAS NPN 50V 0.1A VESM
Packaging: Tape & Reel (TR)
Package / Case: SOT-723
Mounting Type: Surface Mount
Transistor Type: NPN - Pre-Biased
Vce Saturation (Max) @ Ib, Ic: 300mV @ 250µA, 5mA
Current - Collector Cutoff (Max): 500nA
DC Current Gain (hFE) (Min) @ Ic, Vce: 50 @ 10mA, 5V
Supplier Device Package: VESM
Current - Collector (Ic) (Max): 100 mA
Voltage - Collector Emitter Breakdown (Max): 50 V
Power - Max: 150 mW
Frequency - Transition: 250 MHz
Resistor - Base (R1): 2.2 kOhms
Resistor - Emitter Base (R2): 10 kOhms
Resistors Included: R1 and R2
товару немає в наявності
В кошику
од. на суму грн.
| RN1114,LF |
![]() |
Виробник: Toshiba Semiconductor and Storage
Description: TRANS PREBIAS NPN 50V 0.1A SSM
Packaging: Tape & Reel (TR)
Current - Collector (Ic) (Max): 100 mA
Voltage - Collector Emitter Breakdown (Max): 50 V
Power - Max: 100 mW
Frequency - Transition: 250 MHz
Resistor - Base (R1): 1 kOhms
Resistor - Emitter Base (R2): 10 kOhms
Package / Case: SC-75, SOT-416
Mounting Type: Surface Mount
Transistor Type: NPN - Pre-Biased
Vce Saturation (Max) @ Ib, Ic: 300mV @ 250µA, 5mA
Current - Collector Cutoff (Max): 500nA
DC Current Gain (hFE) (Min) @ Ic, Vce: 50 @ 10mA, 5V
Supplier Device Package: SSM
Resistors Included: R1 and R2
Description: TRANS PREBIAS NPN 50V 0.1A SSM
Packaging: Tape & Reel (TR)
Current - Collector (Ic) (Max): 100 mA
Voltage - Collector Emitter Breakdown (Max): 50 V
Power - Max: 100 mW
Frequency - Transition: 250 MHz
Resistor - Base (R1): 1 kOhms
Resistor - Emitter Base (R2): 10 kOhms
Package / Case: SC-75, SOT-416
Mounting Type: Surface Mount
Transistor Type: NPN - Pre-Biased
Vce Saturation (Max) @ Ib, Ic: 300mV @ 250µA, 5mA
Current - Collector Cutoff (Max): 500nA
DC Current Gain (hFE) (Min) @ Ic, Vce: 50 @ 10mA, 5V
Supplier Device Package: SSM
Resistors Included: R1 and R2
на замовлення 3000 шт:
термін постачання 21-31 дні (днів)| Кількість | Ціна |
|---|---|
| 3000+ | 2.65 грн |
| RN1114,LF |
![]() |
Виробник: Toshiba Semiconductor and Storage
Description: TRANS PREBIAS NPN 50V 0.1A SSM
Packaging: Cut Tape (CT)
Current - Collector (Ic) (Max): 100 mA
Voltage - Collector Emitter Breakdown (Max): 50 V
Power - Max: 100 mW
Frequency - Transition: 250 MHz
Resistor - Base (R1): 1 kOhms
Resistor - Emitter Base (R2): 10 kOhms
Package / Case: SC-75, SOT-416
Mounting Type: Surface Mount
Transistor Type: NPN - Pre-Biased
Vce Saturation (Max) @ Ib, Ic: 300mV @ 250µA, 5mA
Current - Collector Cutoff (Max): 500nA
DC Current Gain (hFE) (Min) @ Ic, Vce: 50 @ 10mA, 5V
Supplier Device Package: SSM
Resistors Included: R1 and R2
Description: TRANS PREBIAS NPN 50V 0.1A SSM
Packaging: Cut Tape (CT)
Current - Collector (Ic) (Max): 100 mA
Voltage - Collector Emitter Breakdown (Max): 50 V
Power - Max: 100 mW
Frequency - Transition: 250 MHz
Resistor - Base (R1): 1 kOhms
Resistor - Emitter Base (R2): 10 kOhms
Package / Case: SC-75, SOT-416
Mounting Type: Surface Mount
Transistor Type: NPN - Pre-Biased
Vce Saturation (Max) @ Ib, Ic: 300mV @ 250µA, 5mA
Current - Collector Cutoff (Max): 500nA
DC Current Gain (hFE) (Min) @ Ic, Vce: 50 @ 10mA, 5V
Supplier Device Package: SSM
Resistors Included: R1 and R2
на замовлення 3000 шт:
термін постачання 21-31 дні (днів)| Кількість | Ціна |
|---|---|
| 24+ | 13.21 грн |
| 39+ | 7.78 грн |
| 100+ | 4.84 грн |
| 500+ | 3.31 грн |
| 1000+ | 2.91 грн |
| XPH4R714MC,L1XHQ |
![]() |
Виробник: Toshiba Semiconductor and Storage
Description: MOSFET P-CH 40V 60A 8SOP
Packaging: Tape & Reel (TR)
Package / Case: 8-PowerVDFN
Mounting Type: Surface Mount
Operating Temperature: 175°C
Technology: MOSFET (Metal Oxide)
FET Type: P-Channel
Current - Continuous Drain (Id) @ 25°C: 60A (Ta)
Rds On (Max) @ Id, Vgs: 4.7mOhm @ 30A, 10V
Power Dissipation (Max): 960mW (Ta), 132W (Tc)
Vgs(th) (Max) @ Id: 2.1V @ 1mA
Supplier Device Package: 8-SOP Advance (5x5)
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): +10V, -20V
Drain to Source Voltage (Vdss): 40 V
Gate Charge (Qg) (Max) @ Vgs: 160 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 5640 pF @ 10 V
Grade: Automotive
Qualification: AEC-Q101
Description: MOSFET P-CH 40V 60A 8SOP
Packaging: Tape & Reel (TR)
Package / Case: 8-PowerVDFN
Mounting Type: Surface Mount
Operating Temperature: 175°C
Technology: MOSFET (Metal Oxide)
FET Type: P-Channel
Current - Continuous Drain (Id) @ 25°C: 60A (Ta)
Rds On (Max) @ Id, Vgs: 4.7mOhm @ 30A, 10V
Power Dissipation (Max): 960mW (Ta), 132W (Tc)
Vgs(th) (Max) @ Id: 2.1V @ 1mA
Supplier Device Package: 8-SOP Advance (5x5)
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): +10V, -20V
Drain to Source Voltage (Vdss): 40 V
Gate Charge (Qg) (Max) @ Vgs: 160 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 5640 pF @ 10 V
Grade: Automotive
Qualification: AEC-Q101
на замовлення 5000 шт:
термін постачання 21-31 дні (днів)| Кількість | Ціна |
|---|---|
| 5000+ | 31.19 грн |
| XPH4R714MC,L1XHQ |
![]() |
Виробник: Toshiba Semiconductor and Storage
Description: MOSFET P-CH 40V 60A 8SOP
Packaging: Cut Tape (CT)
Package / Case: 8-PowerVDFN
Mounting Type: Surface Mount
Operating Temperature: 175°C
Technology: MOSFET (Metal Oxide)
FET Type: P-Channel
Current - Continuous Drain (Id) @ 25°C: 60A (Ta)
Rds On (Max) @ Id, Vgs: 4.7mOhm @ 30A, 10V
Power Dissipation (Max): 960mW (Ta), 132W (Tc)
Vgs(th) (Max) @ Id: 2.1V @ 1mA
Supplier Device Package: 8-SOP Advance (5x5)
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): +10V, -20V
Drain to Source Voltage (Vdss): 40 V
Gate Charge (Qg) (Max) @ Vgs: 160 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 5640 pF @ 10 V
Grade: Automotive
Qualification: AEC-Q101
Description: MOSFET P-CH 40V 60A 8SOP
Packaging: Cut Tape (CT)
Package / Case: 8-PowerVDFN
Mounting Type: Surface Mount
Operating Temperature: 175°C
Technology: MOSFET (Metal Oxide)
FET Type: P-Channel
Current - Continuous Drain (Id) @ 25°C: 60A (Ta)
Rds On (Max) @ Id, Vgs: 4.7mOhm @ 30A, 10V
Power Dissipation (Max): 960mW (Ta), 132W (Tc)
Vgs(th) (Max) @ Id: 2.1V @ 1mA
Supplier Device Package: 8-SOP Advance (5x5)
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): +10V, -20V
Drain to Source Voltage (Vdss): 40 V
Gate Charge (Qg) (Max) @ Vgs: 160 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 5640 pF @ 10 V
Grade: Automotive
Qualification: AEC-Q101
на замовлення 7811 шт:
термін постачання 21-31 дні (днів)| Кількість | Ціна |
|---|---|
| 3+ | 122.77 грн |
| 10+ | 75.12 грн |
| 100+ | 50.50 грн |
| 500+ | 37.50 грн |
| 1000+ | 34.50 грн |
| XPH4R10ANB,L1XHQ |
![]() |
Виробник: Toshiba Semiconductor and Storage
Description: MOSFET N-CH 100V 70A 8SOP
Packaging: Tape & Reel (TR)
Package / Case: 8-PowerVDFN
Mounting Type: Surface Mount
Operating Temperature: 175°C
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 70A (Ta)
Rds On (Max) @ Id, Vgs: 4.1mOhm @ 35A, 10V
Power Dissipation (Max): 960mW (Ta), 170W (Tc)
Vgs(th) (Max) @ Id: 3.5V @ 1mA
Supplier Device Package: 8-SOP Advance (5x5)
Drive Voltage (Max Rds On, Min Rds On): 6V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 100 V
Gate Charge (Qg) (Max) @ Vgs: 75 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 4970 pF @ 10 V
Grade: Automotive
Qualification: AEC-Q101
Description: MOSFET N-CH 100V 70A 8SOP
Packaging: Tape & Reel (TR)
Package / Case: 8-PowerVDFN
Mounting Type: Surface Mount
Operating Temperature: 175°C
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 70A (Ta)
Rds On (Max) @ Id, Vgs: 4.1mOhm @ 35A, 10V
Power Dissipation (Max): 960mW (Ta), 170W (Tc)
Vgs(th) (Max) @ Id: 3.5V @ 1mA
Supplier Device Package: 8-SOP Advance (5x5)
Drive Voltage (Max Rds On, Min Rds On): 6V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 100 V
Gate Charge (Qg) (Max) @ Vgs: 75 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 4970 pF @ 10 V
Grade: Automotive
Qualification: AEC-Q101
на замовлення 30000 шт:
термін постачання 21-31 дні (днів)| Кількість | Ціна |
|---|---|
| 5000+ | 42.95 грн |
| XPH4R10ANB,L1XHQ |
![]() |
Виробник: Toshiba Semiconductor and Storage
Description: MOSFET N-CH 100V 70A 8SOP
Packaging: Cut Tape (CT)
Package / Case: 8-PowerVDFN
Mounting Type: Surface Mount
Operating Temperature: 175°C
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 70A (Ta)
Rds On (Max) @ Id, Vgs: 4.1mOhm @ 35A, 10V
Power Dissipation (Max): 960mW (Ta), 170W (Tc)
Vgs(th) (Max) @ Id: 3.5V @ 1mA
Supplier Device Package: 8-SOP Advance (5x5)
Drive Voltage (Max Rds On, Min Rds On): 6V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 100 V
Gate Charge (Qg) (Max) @ Vgs: 75 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 4970 pF @ 10 V
Grade: Automotive
Qualification: AEC-Q101
Description: MOSFET N-CH 100V 70A 8SOP
Packaging: Cut Tape (CT)
Package / Case: 8-PowerVDFN
Mounting Type: Surface Mount
Operating Temperature: 175°C
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 70A (Ta)
Rds On (Max) @ Id, Vgs: 4.1mOhm @ 35A, 10V
Power Dissipation (Max): 960mW (Ta), 170W (Tc)
Vgs(th) (Max) @ Id: 3.5V @ 1mA
Supplier Device Package: 8-SOP Advance (5x5)
Drive Voltage (Max Rds On, Min Rds On): 6V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 100 V
Gate Charge (Qg) (Max) @ Vgs: 75 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 4970 pF @ 10 V
Grade: Automotive
Qualification: AEC-Q101
на замовлення 33237 шт:
термін постачання 21-31 дні (днів)| Кількість | Ціна |
|---|---|
| 2+ | 155.41 грн |
| 10+ | 95.78 грн |
| 100+ | 65.19 грн |
| 500+ | 48.90 грн |
| 1000+ | 47.51 грн |
| DF2B7AE,H3F |
![]() |
Виробник: Toshiba Semiconductor and Storage
Description: TVS DIODE 5.5VWM 20VC ESC
Packaging: Tape & Reel (TR)
Package / Case: SC-79, SOD-523
Mounting Type: Surface Mount
Type: Zener
Operating Temperature: 150°C (TJ)
Capacitance @ Frequency: 8.5pF @ 1MHz
Current - Peak Pulse (10/1000µs): 4A (8/20µs)
Voltage - Reverse Standoff (Typ): 5.5V (Max)
Supplier Device Package: ESC
Bidirectional Channels: 1
Voltage - Breakdown (Min): 5.8V
Voltage - Clamping (Max) @ Ipp: 20V
Power - Peak Pulse: 80W
Power Line Protection: No
Description: TVS DIODE 5.5VWM 20VC ESC
Packaging: Tape & Reel (TR)
Package / Case: SC-79, SOD-523
Mounting Type: Surface Mount
Type: Zener
Operating Temperature: 150°C (TJ)
Capacitance @ Frequency: 8.5pF @ 1MHz
Current - Peak Pulse (10/1000µs): 4A (8/20µs)
Voltage - Reverse Standoff (Typ): 5.5V (Max)
Supplier Device Package: ESC
Bidirectional Channels: 1
Voltage - Breakdown (Min): 5.8V
Voltage - Clamping (Max) @ Ipp: 20V
Power - Peak Pulse: 80W
Power Line Protection: No
на замовлення 16000 шт:
термін постачання 21-31 дні (днів)| Кількість | Ціна |
|---|---|
| 4000+ | 2.66 грн |
| 8000+ | 2.29 грн |
| 12000+ | 2.15 грн |
| DF2B7AE,H3F |
![]() |
Виробник: Toshiba Semiconductor and Storage
Description: TVS DIODE 5.5VWM 20VC ESC
Packaging: Cut Tape (CT)
Package / Case: SC-79, SOD-523
Mounting Type: Surface Mount
Type: Zener
Operating Temperature: 150°C (TJ)
Capacitance @ Frequency: 8.5pF @ 1MHz
Current - Peak Pulse (10/1000µs): 4A (8/20µs)
Voltage - Reverse Standoff (Typ): 5.5V (Max)
Supplier Device Package: ESC
Bidirectional Channels: 1
Voltage - Breakdown (Min): 5.8V
Voltage - Clamping (Max) @ Ipp: 20V
Power - Peak Pulse: 80W
Power Line Protection: No
Description: TVS DIODE 5.5VWM 20VC ESC
Packaging: Cut Tape (CT)
Package / Case: SC-79, SOD-523
Mounting Type: Surface Mount
Type: Zener
Operating Temperature: 150°C (TJ)
Capacitance @ Frequency: 8.5pF @ 1MHz
Current - Peak Pulse (10/1000µs): 4A (8/20µs)
Voltage - Reverse Standoff (Typ): 5.5V (Max)
Supplier Device Package: ESC
Bidirectional Channels: 1
Voltage - Breakdown (Min): 5.8V
Voltage - Clamping (Max) @ Ipp: 20V
Power - Peak Pulse: 80W
Power Line Protection: No
на замовлення 21784 шт:
термін постачання 21-31 дні (днів)| Кількість | Ціна |
|---|---|
| 23+ | 13.99 грн |
| 37+ | 8.23 грн |
| 100+ | 5.08 грн |
| 500+ | 3.47 грн |
| 1000+ | 3.05 грн |
| 2000+ | 2.70 грн |
| TK1K7A60F,S4X |
![]() |
Виробник: Toshiba Semiconductor and Storage
Description: X35 PB-F POWER MOSFET TRANSISTOR
Packaging: Tube
Package / Case: TO-220-3 Full Pack
Mounting Type: Through Hole
Operating Temperature: 150°C
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 4A (Ta)
Rds On (Max) @ Id, Vgs: 1.7Ohm @ 2A, 10V
Power Dissipation (Max): 35W (Tc)
Vgs(th) (Max) @ Id: 4V @ 460µA
Supplier Device Package: TO-220SIS
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±30V
Drain to Source Voltage (Vdss): 600 V
Gate Charge (Qg) (Max) @ Vgs: 16 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 560 pF @ 300 V
Description: X35 PB-F POWER MOSFET TRANSISTOR
Packaging: Tube
Package / Case: TO-220-3 Full Pack
Mounting Type: Through Hole
Operating Temperature: 150°C
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 4A (Ta)
Rds On (Max) @ Id, Vgs: 1.7Ohm @ 2A, 10V
Power Dissipation (Max): 35W (Tc)
Vgs(th) (Max) @ Id: 4V @ 460µA
Supplier Device Package: TO-220SIS
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±30V
Drain to Source Voltage (Vdss): 600 V
Gate Charge (Qg) (Max) @ Vgs: 16 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 560 pF @ 300 V
на замовлення 1 шт:
термін постачання 21-31 дні (днів)В кошику од. на суму грн.
| TCR3RM10A,LF |
![]() |
Виробник: Toshiba Semiconductor and Storage
Description: IC REG LINEAR 1V 300MA 4DFNC
Packaging: Tape & Reel (TR)
Package / Case: 4-XDFN Exposed Pad
Output Type: Fixed
Mounting Type: Surface Mount
Current - Output: 300mA
Operating Temperature: -40°C ~ 85°C
Output Configuration: Positive
Voltage - Input (Max): 5.5V
Number of Regulators: 1
Supplier Device Package: 4-DFNC (1x1)
Voltage - Output (Min/Fixed): 1V
Part Status: Obsolete
PSRR: 100dB (1kHz)
Voltage Dropout (Max): 0.13V @ 300mA
Protection Features: Over Current, Over Temperature
Description: IC REG LINEAR 1V 300MA 4DFNC
Packaging: Tape & Reel (TR)
Package / Case: 4-XDFN Exposed Pad
Output Type: Fixed
Mounting Type: Surface Mount
Current - Output: 300mA
Operating Temperature: -40°C ~ 85°C
Output Configuration: Positive
Voltage - Input (Max): 5.5V
Number of Regulators: 1
Supplier Device Package: 4-DFNC (1x1)
Voltage - Output (Min/Fixed): 1V
Part Status: Obsolete
PSRR: 100dB (1kHz)
Voltage Dropout (Max): 0.13V @ 300mA
Protection Features: Over Current, Over Temperature
товару немає в наявності
В кошику
од. на суму грн.
| TCR3RM10A,LF |
![]() |
Виробник: Toshiba Semiconductor and Storage
Description: IC REG LINEAR 1V 300MA 4DFNC
Packaging: Cut Tape (CT)
Package / Case: 4-XDFN Exposed Pad
Output Type: Fixed
Mounting Type: Surface Mount
Current - Output: 300mA
Operating Temperature: -40°C ~ 85°C
Output Configuration: Positive
Voltage - Input (Max): 5.5V
Number of Regulators: 1
Supplier Device Package: 4-DFNC (1x1)
Voltage - Output (Min/Fixed): 1V
Part Status: Obsolete
PSRR: 100dB (1kHz)
Voltage Dropout (Max): 0.13V @ 300mA
Protection Features: Over Current, Over Temperature
Description: IC REG LINEAR 1V 300MA 4DFNC
Packaging: Cut Tape (CT)
Package / Case: 4-XDFN Exposed Pad
Output Type: Fixed
Mounting Type: Surface Mount
Current - Output: 300mA
Operating Temperature: -40°C ~ 85°C
Output Configuration: Positive
Voltage - Input (Max): 5.5V
Number of Regulators: 1
Supplier Device Package: 4-DFNC (1x1)
Voltage - Output (Min/Fixed): 1V
Part Status: Obsolete
PSRR: 100dB (1kHz)
Voltage Dropout (Max): 0.13V @ 300mA
Protection Features: Over Current, Over Temperature
товару немає в наявності
В кошику
од. на суму грн.
| SSM6N68NU,LF |
![]() |
Виробник: Toshiba Semiconductor and Storage
Description: SMALL LOW RON DUAL NCH MOSFETS H
Packaging: Tape & Reel (TR)
Package / Case: 6-WDFN Exposed Pad
Mounting Type: Surface Mount
Configuration: 2 N-Channel (Dual)
Operating Temperature: 150°C
Technology: MOSFET (Metal Oxide)
Power - Max: 2W (Ta)
Drain to Source Voltage (Vdss): 30V
Current - Continuous Drain (Id) @ 25°C: 4A (Ta)
Input Capacitance (Ciss) (Max) @ Vds: 129pF @ 15V
Rds On (Max) @ Id, Vgs: 84mOhm @ 2A, 4.5V
Gate Charge (Qg) (Max) @ Vgs: 1.8nC @ 4.5V
FET Feature: Logic Level Gate, 1.8V Drive
Vgs(th) (Max) @ Id: 1V @ 1mA
Supplier Device Package: 6-µDFN (2x2)
Part Status: Active
Description: SMALL LOW RON DUAL NCH MOSFETS H
Packaging: Tape & Reel (TR)
Package / Case: 6-WDFN Exposed Pad
Mounting Type: Surface Mount
Configuration: 2 N-Channel (Dual)
Operating Temperature: 150°C
Technology: MOSFET (Metal Oxide)
Power - Max: 2W (Ta)
Drain to Source Voltage (Vdss): 30V
Current - Continuous Drain (Id) @ 25°C: 4A (Ta)
Input Capacitance (Ciss) (Max) @ Vds: 129pF @ 15V
Rds On (Max) @ Id, Vgs: 84mOhm @ 2A, 4.5V
Gate Charge (Qg) (Max) @ Vgs: 1.8nC @ 4.5V
FET Feature: Logic Level Gate, 1.8V Drive
Vgs(th) (Max) @ Id: 1V @ 1mA
Supplier Device Package: 6-µDFN (2x2)
Part Status: Active
товару немає в наявності
В кошику
од. на суму грн.




















