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1SMB5928B-13 1SMB5928B-13 DIODES INCORPORATED 1SMB59xxB_ser.pdf Category: SMD Zener diodes
Description: Diode: Zener; 3W; 13V; SMD; SMB; single diode; reel,tape
Type of diode: Zener
Power dissipation: 3W
Zener voltage: 13V
Mounting: SMD
Tolerance: ±5%
Case: SMB
Semiconductor structure: single diode
Kind of package: reel; tape
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1SMB5920B-13 1SMB5920B-13 DIODES INCORPORATED 1SMB59xxB_ser.pdf Category: SMD Zener diodes
Description: Diode: Zener; 3W; 6.2V; SMD; SMB; single diode; reel,tape
Type of diode: Zener
Power dissipation: 3W
Zener voltage: 6.2V
Mounting: SMD
Tolerance: ±5%
Case: SMB
Semiconductor structure: single diode
Kind of package: reel; tape
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MMDT2227Q-7-F MMDT2227Q-7-F DIODES INCORPORATED MMDT2227Q.pdf Category: Complementary transistors
Description: Transistor: NPN / PNP; bipolar; complementary pair; 40/60V; 0.6A
Type of transistor: NPN / PNP
Polarisation: bipolar
Collector-emitter voltage: 40/60V
Collector current: 0.6A
Power dissipation: 0.2W
Case: SOT363
Current gain: 35...300
Mounting: SMD
Kind of package: reel; tape
Frequency: 300MHz
Manufacturer standard package: 3000pcs.
Kind of transistor: complementary pair
Application: automotive industry
на замовлення 2968 шт:
термін постачання 14-30 дні (днів)
19+24.61 грн
28+15.66 грн
100+8.82 грн
500+6.18 грн
1000+5.42 грн
Мінімальне замовлення: 19 шт
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MMDT2227-7-F MMDT2227-7-F DIODES INCORPORATED MMDT2227.pdf Category: Complementary transistors
Description: Transistor: NPN / PNP; bipolar; complementary pair; 40/60V; 0.6A
Type of transistor: NPN / PNP
Polarisation: bipolar
Collector-emitter voltage: 40/60V
Collector current: 0.6A
Power dissipation: 0.2W
Case: SOT363
Current gain: 35...300
Mounting: SMD
Kind of package: reel; tape
Frequency: 300MHz
Manufacturer standard package: 3000pcs.
Kind of transistor: complementary pair
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MMDT2227M-7 MMDT2227M-7 DIODES INCORPORATED ds30718.pdf Category: Complementary transistors
Description: Transistor: NPN / PNP; bipolar; complementary pair; 40/60V; 0.6A
Type of transistor: NPN / PNP
Polarisation: bipolar
Collector-emitter voltage: 40/60V
Collector current: 0.6A
Power dissipation: 0.3W
Case: SOT26
Current gain: 35...300
Mounting: SMD
Kind of package: reel; tape
Frequency: 300MHz
Manufacturer standard package: 3000pcs.
Kind of transistor: complementary pair
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SMAJ40AQ-13-F SMAJ40AQ-13-F DIODES INCORPORATED SMAJ5.0CAQ-SMAJ200CAQ.pdf Category: Unidirectional TVS SMD diodes
Description: Diode: TVS; 0.4kW; 44.4÷49.1V; 6.2A; unidirectional; SMA; reel,tape
Type of diode: TVS
Peak pulse power dissipation: 0.4kW
Max. off-state voltage: 40V
Breakdown voltage: 44.4...49.1V
Max. forward impulse current: 6.2A
Semiconductor structure: unidirectional
Case: SMA
Mounting: SMD
Leakage current: 5µA
Features of semiconductor devices: glass passivated
Kind of package: reel; tape
Application: automotive industry
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ZVN0124A ZVN0124A DIODES INCORPORATED ZVN0124A.pdf Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 240V; 0.16A; Idm: 2A; 0.7W; TO92
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 240V
Drain current: 0.16A
Pulsed drain current: 2A
Power dissipation: 0.7W
Case: TO92
Gate-source voltage: ±20V
On-state resistance: 16Ω
Mounting: THT
Kind of package: bulk
Kind of channel: enhancement
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74AUP1G09FS3-7 DIODES INCORPORATED 74AUP1G09.pdf Category: Gates, inverters
Description: IC: digital; AND; Ch: 1; IN: 2; CMOS; SMD; X2-DFN0808-4; -40÷150°C
Type of integrated circuit: digital
Kind of gate: AND
Number of channels: 1
Number of inputs: 2
Technology: CMOS
Mounting: SMD
Case: X2-DFN0808-4
Supply voltage: 0.8...3.6V DC
Operating temperature: -40...150°C
Kind of package: reel; tape
Kind of output: push-pull
Family: AUP
Kind of input: with Schmitt trigger
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74AUP1G09FW4-7 DIODES INCORPORATED 74AUP1G09.pdf Category: Gates, inverters
Description: IC: digital; AND; Ch: 1; IN: 2; CMOS; SMD; X2-DFN1010-6; 0.8÷3.6VDC
Type of integrated circuit: digital
Kind of gate: AND
Number of channels: 1
Number of inputs: 2
Technology: CMOS
Mounting: SMD
Case: X2-DFN1010-6
Supply voltage: 0.8...3.6V DC
Operating temperature: -40...150°C
Kind of package: reel; tape
Kind of output: open drain
Family: AUP
Kind of input: with Schmitt trigger
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74AUP1G09FW5-7 DIODES INCORPORATED 74AUP1G09.pdf Category: Gates, inverters
Description: IC: digital; AND; Ch: 1; IN: 2; CMOS; SMD; X1-DFN1010-6; 0.8÷3.6VDC
Type of integrated circuit: digital
Kind of gate: AND
Number of channels: 1
Number of inputs: 2
Technology: CMOS
Mounting: SMD
Case: X1-DFN1010-6
Supply voltage: 0.8...3.6V DC
Operating temperature: -40...150°C
Kind of package: reel; tape
Kind of output: open drain
Family: AUP
Kind of input: with Schmitt trigger
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74AUP1G09FX4-7 DIODES INCORPORATED 74AUP1G09.pdf Category: Gates, inverters
Description: IC: digital; AND; Ch: 1; IN: 2; CMOS; SMD; X2-DFN1409-6; 0.8÷3.6VDC
Type of integrated circuit: digital
Kind of gate: AND
Number of channels: 1
Number of inputs: 2
Technology: CMOS
Mounting: SMD
Case: X2-DFN1409-6
Supply voltage: 0.8...3.6V DC
Operating temperature: -40...150°C
Kind of package: reel; tape
Kind of output: open drain
Family: AUP
Kind of input: with Schmitt trigger
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74LVC1G11FW4-7 DIODES INCORPORATED 74LVC1G11.pdf Category: Gates, inverters
Description: IC: digital; AND; Ch: 1; IN: 3; CMOS; SMD; X2-DFN1010-6; 1.65÷5.5VDC
Type of integrated circuit: digital
Kind of gate: AND
Number of channels: 1
Number of inputs: 3
Technology: CMOS
Mounting: SMD
Case: X2-DFN1010-6
Supply voltage: 1.65...5.5V DC
Operating temperature: -40...150°C
Kind of package: reel; tape
Family: LVC
Kind of output: push-pull
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74LVC1G11FZ4-7 DIODES INCORPORATED 74LVC1G11.pdf Category: Gates, inverters
Description: IC: digital; AND; Ch: 1; IN: 3; CMOS; SMD; X2-DFN1410-6; 1.65÷5.5VDC
Type of integrated circuit: digital
Kind of gate: AND
Number of channels: 1
Number of inputs: 3
Technology: CMOS
Mounting: SMD
Case: X2-DFN1410-6
Supply voltage: 1.65...5.5V DC
Operating temperature: -40...150°C
Kind of package: reel; tape
Family: LVC
Kind of output: push-pull
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74LVC1G11W6-7 74LVC1G11W6-7 DIODES INCORPORATED 74LVC1G11.pdf Category: Gates, inverters
Description: IC: digital; AND; Ch: 1; IN: 3; CMOS; SMD; SOT26; 1.65÷5.5VDC; LVC
Type of integrated circuit: digital
Kind of gate: AND
Number of channels: 1
Number of inputs: 3
Technology: CMOS
Mounting: SMD
Case: SOT26
Supply voltage: 1.65...5.5V DC
Operating temperature: -40...150°C
Kind of package: reel; tape
Family: LVC
Kind of output: push-pull
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74LVC2G08HD4-7 DIODES INCORPORATED 74LVC2G08.pdf Category: Gates, inverters
Description: IC: digital; AND; Ch: 2; IN: 2; CMOS; SMD; X2-DFN2010-8; 1.65÷5.5VDC
Type of integrated circuit: digital
Kind of gate: AND
Number of channels: 2
Number of inputs: 2
Kind of output: push-pull
Operating temperature: -40...150°C
Technology: CMOS
Kind of input: with Schmitt trigger
Kind of package: reel; tape
Case: X2-DFN2010-8
Family: LVC
Mounting: SMD
Supply voltage: 1.65...5.5V DC
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74LVC2G08HK3-7 DIODES INCORPORATED 74LVC2G08.pdf Category: Gates, inverters
Description: IC: digital; AND; Ch: 2; IN: 4; CMOS; SMD; X2-DFN1410-8; 1.65÷5.5VDC
Type of integrated circuit: digital
Kind of gate: AND
Number of channels: 2
Number of inputs: 4
Kind of output: push-pull
Operating temperature: -40...150°C
Technology: CMOS
Kind of input: with Schmitt trigger
Kind of package: reel; tape
Case: X2-DFN1410-8
Family: LVC
Mounting: SMD
Supply voltage: 1.65...5.5V DC
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74LVC2G08RA3-7 DIODES INCORPORATED 74LVC2G08.pdf Category: Gates, inverters
Description: IC: digital; AND; Ch: 2; IN: 2; CMOS; SMD; X2-DFN1210-8; 1.65÷5.5VDC
Type of integrated circuit: digital
Kind of gate: AND
Number of channels: 2
Number of inputs: 2
Kind of output: push-pull
Operating temperature: -40...150°C
Technology: CMOS
Kind of input: with Schmitt trigger
Kind of package: reel; tape
Case: X2-DFN1210-8
Family: LVC
Mounting: SMD
Supply voltage: 1.65...5.5V DC
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DMP2305U-7 DMP2305U-7 DIODES INCORPORATED DMP2305.pdf Category: SMD P channel transistors
Description: Transistor: P-MOSFET; unipolar; -20V; -4.2A; 1.4W; SOT23
Polarisation: unipolar
Drain current: -4.2A
Kind of channel: enhancement
Drain-source voltage: -20V
Type of transistor: P-MOSFET
Gate-source voltage: ±8V
Kind of package: 7 inch reel; tape
Case: SOT23
On-state resistance: 60mΩ
Mounting: SMD
Power dissipation: 1.4W
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DMP2305UQ-7 DMP2305UQ-7 DIODES INCORPORATED DMP2305UQ_Rev1-3_Feb2022.pdf Category: SMD P channel transistors
Description: Transistor: P-MOSFET; unipolar; -20V; -3.4A; Idm: -10A; 1.4W; SOT23
Polarisation: unipolar
Drain current: -3.4A
Kind of channel: enhancement
Drain-source voltage: -20V
Application: automotive industry
Type of transistor: P-MOSFET
Gate-source voltage: ±8V
Kind of package: 7 inch reel; tape
Case: SOT23
On-state resistance: 113mΩ
Mounting: SMD
Pulsed drain current: -10A
Power dissipation: 1.4W
Gate charge: 7.6nC
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DMP2305UVT-7 DMP2305UVT-7 DIODES INCORPORATED DMP2305UVT.pdf Category: SMD P channel transistors
Description: Transistor: P-MOSFET; unipolar; -20V; -2.98A; Idm: -16A; 1.64W
Polarisation: unipolar
Drain current: -2.98A
Kind of channel: enhancement
Drain-source voltage: -20V
Type of transistor: P-MOSFET
Gate-source voltage: ±8V
Kind of package: 7 inch reel; tape
Case: TSOT26
On-state resistance: 113mΩ
Mounting: SMD
Pulsed drain current: -16A
Power dissipation: 1.64W
Gate charge: 7.6nC
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DMP32D4SFB-7B DMP32D4SFB-7B DIODES INCORPORATED DMP32D4SFB.pdf Category: SMD P channel transistors
Description: Transistor: P-MOSFET; unipolar; -30V; -0.4A; 0.5W; X1-DFN1006-3
Type of transistor: P-MOSFET
Polarisation: unipolar
Drain-source voltage: -30V
Drain current: -400mA
Power dissipation: 0.5W
Case: X1-DFN1006-3
Gate-source voltage: ±20V
On-state resistance: 2.4Ω
Mounting: SMD
Kind of package: 7 inch reel; tape
Kind of channel: enhancement
Version: ESD
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DT1042-04SO-7 DIODES INCORPORATED Category: Protection diodes - arrays
Description: Diode: TVS array
Type of diode: TVS array
Mounting: SMD
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DDZ9707-7 DDZ9707-7 DIODES INCORPORATED ds30410.pdf Category: SMD Zener diodes
Description: Diode: Zener; 0.5W; 20V; SMD; SOD123; single diode; reel,tape
Tolerance: ±5%
Mounting: SMD
Power dissipation: 0.5W
Kind of package: reel; tape
Semiconductor structure: single diode
Case: SOD123
Zener voltage: 20V
Type of diode: Zener
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DDZ9707S-7 DDZ9707S-7 DIODES INCORPORATED ds30409.pdf Category: SMD Zener diodes
Description: Diode: Zener; 0.2W; 20V; SMD; SOD323; single diode; reel,tape
Mounting: SMD
Power dissipation: 0.2W
Kind of package: reel; tape
Semiconductor structure: single diode
Case: SOD323
Zener voltage: 20V
Type of diode: Zener
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DDZ9707T-7 DDZ9707T-7 DIODES INCORPORATED ds30553.pdf Category: SMD Zener diodes
Description: Diode: Zener; 0.15W; 20V; SMD; SOD523; single diode; reel,tape
Tolerance: ±5%
Mounting: SMD
Power dissipation: 0.15W
Kind of package: reel; tape
Semiconductor structure: single diode
Case: SOD523
Zener voltage: 20V
Type of diode: Zener
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ZTX551 ZTX551 DIODES INCORPORATED ZTX550.pdf Category: PNP THT transistors
Description: Transistor: PNP; bipolar; 60V; 1A; 1W; TO92
Type of transistor: PNP
Polarisation: bipolar
Collector-emitter voltage: 60V
Collector current: 1A
Power dissipation: 1W
Case: TO92
Mounting: THT
Kind of package: bulk
Frequency: 150MHz
Manufacturer standard package: 4000pcs.
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ZTX551STZ ZTX551STZ DIODES INCORPORATED ZTX550.pdf Category: PNP THT transistors
Description: Transistor: PNP; bipolar; 60V; 1A; 1W; TO92
Type of transistor: PNP
Polarisation: bipolar
Collector-emitter voltage: 60V
Collector current: 1A
Power dissipation: 1W
Case: TO92
Mounting: THT
Kind of package: Ammo Pack
Frequency: 150MHz
Manufacturer standard package: 2000pcs.
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SMAJ60AQ-13-F SMAJ60AQ-13-F DIODES INCORPORATED SMAJ5.0CAQ-SMAJ200CAQ.pdf Category: Unidirectional TVS SMD diodes
Description: Diode: TVS; 0.4kW; 66.7÷73.7V; 4.1A; unidirectional; SMA; reel,tape
Type of diode: TVS
Peak pulse power dissipation: 0.4kW
Max. off-state voltage: 60V
Breakdown voltage: 66.7...73.7V
Max. forward impulse current: 4.1A
Semiconductor structure: unidirectional
Case: SMA
Mounting: SMD
Leakage current: 5µA
Features of semiconductor devices: glass passivated
Kind of package: reel; tape
Application: automotive industry
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P4SMAJ60ADF-13 DIODES INCORPORATED P4SMAJ50ADF_P4SMAJ85ADF.pdf Category: Unidirectional TVS SMD diodes
Description: Diode: TVS; 0.4kW; 66.7÷73.7V; 4.1A; unidirectional; D-FLAT
Type of diode: TVS
Mounting: SMD
Max. off-state voltage: 60V
Semiconductor structure: unidirectional
Case: D-FLAT
Max. forward impulse current: 4.1A
Kind of package: reel; tape
Peak pulse power dissipation: 0.4kW
Features of semiconductor devices: glass passivated
Leakage current: 1µA
Breakdown voltage: 66.7...73.7V
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SBR3045CTB-13 SBR3045CTB-13 DIODES INCORPORATED SBR3045CTB.pdf Category: SMD universal diodes
Description: Diode: rectifying; SMD; 45V; 15Ax2; D2PAK; Ufmax: 700mV; SBR®
Type of diode: rectifying
Mounting: SMD
Max. off-state voltage: 45V
Load current: 15A x2
Semiconductor structure: common cathode; double
Case: D2PAK
Max. forward voltage: 0.7V
Kind of package: reel; tape
Technology: SBR®
Max. load current: 30A
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SMAJ51AQ-13-F SMAJ51AQ-13-F DIODES INCORPORATED SMAJ5.0CAQ-SMAJ200CAQ.pdf Category: Unidirectional TVS SMD diodes
Description: Diode: TVS; 0.4kW; 56.7÷62.7V; 4.9A; unidirectional; SMA; reel,tape
Type of diode: TVS
Peak pulse power dissipation: 0.4kW
Max. off-state voltage: 51V
Breakdown voltage: 56.7...62.7V
Max. forward impulse current: 4.9A
Semiconductor structure: unidirectional
Case: SMA
Mounting: SMD
Leakage current: 5µA
Features of semiconductor devices: glass passivated
Kind of package: reel; tape
Application: automotive industry
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SMCJ22A-13-F SMCJ22A-13-F DIODES INCORPORATED SMCJ_ser.pdf Category: Unidirectional TVS SMD diodes
Description: Diode: TVS; 1.5kW; 24.4÷27V; 42.2A; unidirectional; SMC; reel,tape
Type of diode: TVS
Peak pulse power dissipation: 1.5kW
Max. off-state voltage: 22V
Breakdown voltage: 24.4...27V
Max. forward impulse current: 42.2A
Semiconductor structure: unidirectional
Case: SMC
Mounting: SMD
Leakage current: 5µA
Features of semiconductor devices: glass passivated
Kind of package: reel; tape
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SMCJ22AQ-13-F SMCJ22AQ-13-F DIODES INCORPORATED SMCJ5.0CAQ_SMCJ110CAQ.pdf Category: Unidirectional TVS SMD diodes
Description: Diode: TVS; 1.5kW; 24.4÷27V; 42.2A; unidirectional; SMC; reel,tape
Type of diode: TVS
Peak pulse power dissipation: 1.5kW
Max. off-state voltage: 22V
Breakdown voltage: 24.4...27V
Max. forward impulse current: 42.2A
Semiconductor structure: unidirectional
Case: SMC
Mounting: SMD
Leakage current: 5µA
Features of semiconductor devices: glass passivated
Application: automotive industry
Kind of package: reel; tape
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3.0SMCJ22A-13 3.0SMCJ22A-13 DIODES INCORPORATED 3.0SMCJxx.pdf Category: Unidirectional TVS SMD diodes
Description: Diode: TVS; 3kW; 24.4÷27V; 84.5A; unidirectional; SMC; reel,tape
Type of diode: TVS
Peak pulse power dissipation: 3kW
Max. off-state voltage: 22V
Breakdown voltage: 24.4...27V
Max. forward impulse current: 84.5A
Semiconductor structure: unidirectional
Case: SMC
Mounting: SMD
Leakage current: 5µA
Features of semiconductor devices: glass passivated
Kind of package: reel; tape
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DMN1001UCA10-7 DIODES INCORPORATED DMN1001UCA10.pdf Category: Multi channel transistors
Description: Transistor: N-MOSFET x2; unipolar; 12V; 16A; Idm: 90A; 2.4W
Mounting: SMD
Pulsed drain current: 90A
Power dissipation: 2.4W
Gate charge: 29nC
Polarisation: unipolar
Drain current: 16A
Kind of channel: enhancement
Drain-source voltage: 12V
Type of transistor: N-MOSFET x2
Gate-source voltage: ±8V
Kind of package: 7 inch reel; tape
Case: X2-TSN1820-10
On-state resistance: 6.9mΩ
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AL5809-50S1-7 AL5809-50S1-7 DIODES INCORPORATED AL5809-DTE.pdf Category: LED drivers
Description: IC: driver; current regulator,LED driver; SOD123; 50mA; Ch: 1
Type of integrated circuit: driver
Kind of integrated circuit: current regulator; LED driver
Case: SOD123
Output current: 50mA
Number of channels: 1
Integrated circuit features: linear dimming; PWM
Mounting: SMD
Operating temperature: -40...125°C
Operating voltage: 2.5...60V DC
Kind of package: reel; tape
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AL5809-50QP1-7 AL5809-50QP1-7 DIODES INCORPORATED AL5809Q.pdf Category: LED drivers
Description: IC: driver; current regulator,LED driver; PowerDI®123; 50mA; Ch: 1
Type of integrated circuit: driver
Kind of integrated circuit: current regulator; LED driver
Case: PowerDI®123
Output current: 50mA
Number of channels: 1
Integrated circuit features: linear dimming; PWM
Mounting: SMD
Operating temperature: -40...105°C
Operating voltage: 2.5...60V DC
Kind of package: reel; tape
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SDT10A45P5-7 DIODES INCORPORATED SDT10A45P5.pdf Category: SMD Schottky diodes
Description: Diode: Schottky rectifying; PowerDI®5; SMD; 45V; 10A; reel,tape
Type of diode: Schottky rectifying
Max. off-state voltage: 45V
Max. forward impulse current: 180A
Semiconductor structure: single diode
Case: PowerDI®5
Mounting: SMD
Leakage current: 80mA
Kind of package: reel; tape
Max. forward voltage: 0.47V
Load current: 10A
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SDT10A45P5-13 DIODES INCORPORATED SDT10A45P5.pdf Category: SMD Schottky diodes
Description: Diode: Schottky rectifying; PowerDI®5; SMD; 45V; 10A; reel,tape
Type of diode: Schottky rectifying
Max. off-state voltage: 45V
Max. forward impulse current: 180A
Semiconductor structure: single diode
Case: PowerDI®5
Mounting: SMD
Leakage current: 80mA
Kind of package: reel; tape
Max. forward voltage: 0.47V
Load current: 10A
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 Мінімальне замовлення: 5000 шт
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SDT10A100P5-13 DIODES INCORPORATED SDT10A100P5.pdf Category: SMD Schottky diodes
Description: Diode: Schottky rectifying; PowerDI®5; SMD; 100V; 10A; reel,tape
Type of diode: Schottky rectifying
Max. off-state voltage: 0.1kV
Max. forward impulse current: 0.24kA
Semiconductor structure: single diode
Case: PowerDI®5
Mounting: SMD
Leakage current: 20mA
Kind of package: reel; tape
Max. forward voltage: 0.68V
Load current: 10A
товару немає в наявності
 Мінімальне замовлення: 5000 шт
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SMCJ13A-13-F SMCJ13A-13-F DIODES INCORPORATED SMCJ_ser.pdf Category: Unidirectional TVS SMD diodes
Description: Diode: TVS; 1.5kW; 14.4÷15.9V; 69.7A; unidirectional; SMC
Type of diode: TVS
Peak pulse power dissipation: 1.5kW
Max. off-state voltage: 13V
Breakdown voltage: 14.4...15.9V
Max. forward impulse current: 69.7A
Semiconductor structure: unidirectional
Case: SMC
Mounting: SMD
Leakage current: 5µA
Features of semiconductor devices: glass passivated
Kind of package: reel; tape
товару немає в наявності
 Мінімальне замовлення: 3000 шт
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DMN3065LW-7 DMN3065LW-7 DIODES INCORPORATED DMN3065LW.pdf Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 30V; 4A; 0.77W; SOT323
Polarisation: unipolar
Mounting: SMD
Power dissipation: 0.77W
Drain current: 4A
Kind of channel: enhancement
Drain-source voltage: 30V
Type of transistor: N-MOSFET
Gate-source voltage: ±12V
Kind of package: 7 inch reel; tape
Case: SOT323
On-state resistance: 85mΩ
на замовлення 1748 шт:
термін постачання 14-30 дні (днів)
15+31.91 грн
20+21.33 грн
50+14.48 грн
100+12.19 грн
500+8.63 грн
1000+7.70 грн
Мінімальне замовлення: 15 шт
В кошику  од. на суму  грн.
2DB1386Q-13 2DB1386Q-13 DIODES INCORPORATED ds31147.pdf Category: PNP SMD transistors
Description: Transistor: PNP; bipolar; 20V; 5A; 1W; SOT89; automotive industry
Frequency: 100MHz
Polarisation: bipolar
Pulsed collector current: 10A
Application: automotive industry
Type of transistor: PNP
Current gain: 120...270
Kind of package: reel; tape
Case: SOT89
Collector current: 5A
Mounting: SMD
Manufacturer standard package: 2500pcs.
Collector-emitter voltage: 20V
Power dissipation: 1W
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2DB1386R-13 2DB1386R-13 DIODES INCORPORATED ds31147.pdf Category: PNP SMD transistors
Description: Transistor: PNP; bipolar; 20V; 5A; 1W; SOT89
Frequency: 100MHz
Polarisation: bipolar
Pulsed collector current: 10A
Type of transistor: PNP
Current gain: 180...390
Kind of package: reel; tape
Case: SOT89
Collector current: 5A
Mounting: SMD
Manufacturer standard package: 2500pcs.
Collector-emitter voltage: 20V
Power dissipation: 1W
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SMBJ60A-13-F SMBJ60A-13-F DIODES INCORPORATED ds19002.pdf Category: Unidirectional TVS SMD diodes
Description: Diode: TVS; 0.6kW; 66.7÷76.7V; 6.2A; unidirectional; SMB; reel,tape
Type of diode: TVS
Peak pulse power dissipation: 0.6kW
Max. off-state voltage: 60V
Breakdown voltage: 66.7...76.7V
Max. forward impulse current: 6.2A
Semiconductor structure: unidirectional
Case: SMB
Mounting: SMD
Leakage current: 5µA
Features of semiconductor devices: glass passivated
Kind of package: reel; tape
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SMCJ160CA-13-F SMCJ160CA-13-F DIODES INCORPORATED SMCJ_ser.pdf Category: Bidirectional TVS SMD diodes
Description: Diode: TVS; 1.5kW; 178÷197V; 5.8A; bidirectional; SMC; reel,tape
Type of diode: TVS
Peak pulse power dissipation: 1.5kW
Max. off-state voltage: 160V
Breakdown voltage: 178...197V
Max. forward impulse current: 5.8A
Semiconductor structure: bidirectional
Case: SMC
Mounting: SMD
Leakage current: 5µA
Features of semiconductor devices: glass passivated
Kind of package: reel; tape
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 Мінімальне замовлення: 3 шт
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SMBJ78A-13-F SMBJ78A-13-F DIODES INCORPORATED SMBJ_ser.pdf Category: Unidirectional TVS SMD diodes
Description: Diode: TVS; 0.6kW; 86.7÷99.7V; 4.7A; unidirectional; SMB; reel,tape
Type of diode: TVS
Peak pulse power dissipation: 0.6kW
Max. off-state voltage: 78V
Breakdown voltage: 86.7...99.7V
Max. forward impulse current: 4.7A
Semiconductor structure: unidirectional
Case: SMB
Mounting: SMD
Leakage current: 5µA
Features of semiconductor devices: glass passivated
Kind of package: reel; tape
товару немає в наявності
 Мінімальне замовлення: 3000 шт
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BZX84B5V6-7-F BZX84B5V6-7-F DIODES INCORPORATED BZX84Bxxx.pdf Category: SMD Zener diodes
Description: Diode: Zener; 0.35W; 5.6V; SMD; SOT23; single diode; reel,tape
Type of diode: Zener
Semiconductor structure: single diode
Mounting: SMD
Case: SOT23
Tolerance: ±2%
Kind of package: reel; tape
Power dissipation: 0.35W
Zener voltage: 5.6V
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MMBD914-7-F MMBD914-7-F DIODES INCORPORATED BAS16-7-DTE.pdf Category: SMD universal diodes
Description: Diode: switching; SMD; 75V; 0.2A; 4ns; SOT23; Ufmax: 1.25V; Ifsm: 2A
Type of diode: switching
Mounting: SMD
Max. off-state voltage: 75V
Load current: 0.2A
Reverse recovery time: 4ns
Semiconductor structure: single diode
Case: SOT23
Max. forward voltage: 1.25V
Max. forward impulse current: 2A
Kind of package: reel; tape
Features of semiconductor devices: small signal
Max. load current: 0.3A
Capacitance: 2pF
на замовлення 3573 шт:
термін постачання 14-30 дні (днів)
50+9.12 грн
120+3.56 грн
161+2.64 грн
186+2.28 грн
500+1.57 грн
1000+1.36 грн
2000+1.23 грн
3000+1.16 грн
Мінімальне замовлення: 50 шт
В кошику  од. на суму  грн.
SMBJ6.5A-13-F SMBJ6.5A-13-F DIODES INCORPORATED SMBJ_ser.pdf Category: Unidirectional TVS SMD diodes
Description: Diode: TVS; 0.6kW; 7.22÷8.3V; 53.6A; unidirectional; SMB; reel,tape
Type of diode: TVS
Peak pulse power dissipation: 0.6kW
Max. off-state voltage: 6.5V
Breakdown voltage: 7.22...8.3V
Max. forward impulse current: 53.6A
Semiconductor structure: unidirectional
Case: SMB
Mounting: SMD
Leakage current: 0.5mA
Features of semiconductor devices: glass passivated
Kind of package: reel; tape
на замовлення 565 шт:
термін постачання 14-30 дні (днів)
32+14.59 грн
35+12.19 грн
100+9.99 грн
500+7.03 грн
Мінімальне замовлення: 32 шт
В кошику  од. на суму  грн.
SMCJ28CA-13-F SMCJ28CA-13-F DIODES INCORPORATED SMCJ_ser.pdf Category: Bidirectional TVS SMD diodes
Description: Diode: TVS; 1.5kW; 31.1÷34.4V; 33A; bidirectional; SMC; reel,tape
Type of diode: TVS
Peak pulse power dissipation: 1.5kW
Max. off-state voltage: 28V
Breakdown voltage: 31.1...34.4V
Max. forward impulse current: 33A
Semiconductor structure: bidirectional
Case: SMC
Mounting: SMD
Leakage current: 5µA
Features of semiconductor devices: glass passivated
Kind of package: reel; tape
на замовлення 1259 шт:
термін постачання 14-30 дні (днів)
12+40.11 грн
15+28.44 грн
75+23.96 грн
100+23.28 грн
500+19.64 грн
1000+17.95 грн
Мінімальне замовлення: 12 шт
В кошику  од. на суму  грн.
FMMT618TA FMMT618TA DIODES INCORPORATED FMMT618.pdf Category: NPN SMD transistors
Description: Transistor: NPN; bipolar; 20V; 2.5A; 806mW; SOT23
Type of transistor: NPN
Polarisation: bipolar
Collector-emitter voltage: 20V
Collector current: 2.5A
Power dissipation: 0.806W
Case: SOT23
Pulsed collector current: 6A
Current gain: 100...450
Mounting: SMD
Kind of package: reel; tape
Frequency: 100...140MHz
Manufacturer standard package: 3000pcs.
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FMMT618TA FMMT618TA DIODES INCORPORATED FMMT618.pdf Category: NPN SMD transistors
Description: Transistor: NPN; bipolar; 20V; 2.5A; 806mW; SOT23
Type of transistor: NPN
Polarisation: bipolar
Collector-emitter voltage: 20V
Collector current: 2.5A
Power dissipation: 0.806W
Case: SOT23
Pulsed collector current: 6A
Mounting: SMD
Kind of package: reel; tape
Frequency: 140MHz
Quantity in set/package: 3000pcs.
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SMAZ5V6-13-F SMAZ5V6-13-F DIODES INCORPORATED SMAZx-13-F.pdf Category: SMD Zener diodes
Description: Diode: Zener; 1W; 5.6V; SMD; SMA; single diode; reel,tape
Type of diode: Zener
Power dissipation: 1W
Zener voltage: 5.6V
Case: SMA
Mounting: SMD
Tolerance: ±5%
Semiconductor structure: single diode
Kind of package: reel; tape
на замовлення 752 шт:
термін постачання 14-30 дні (днів)
14+32.82 грн
21+20.49 грн
25+17.01 грн
100+10.16 грн
500+7.96 грн
Мінімальне замовлення: 14 шт
В кошику  од. на суму  грн.
DFLZ5V6-7 DFLZ5V6-7 DIODES INCORPORATED DFLZ-ser.pdf Category: SMD Zener diodes
Description: Diode: Zener; 1W; 5.6V; SMD; PowerDI®123; single diode; reel,tape
Type of diode: Zener
Power dissipation: 1W
Zener voltage: 5.6V
Mounting: SMD
Tolerance: ±5%
Case: PowerDI®123
Semiconductor structure: single diode
Kind of package: reel; tape
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 Мінімальне замовлення: 3000 шт
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2DD2652-7 2DD2652-7 DIODES INCORPORATED 2DD2652.pdf Category: NPN SMD transistors
Description: Transistor: NPN; bipolar; 12V; 1.5A; 300mW; SOT323
Polarisation: bipolar
Pulsed collector current: 3A
Type of transistor: NPN
Current gain: 270...680
Kind of package: reel; tape
Case: SOT323
Frequency: 260MHz
Collector current: 1.5A
Mounting: SMD
Manufacturer standard package: 3000pcs.
Collector-emitter voltage: 12V
Power dissipation: 0.3W
на замовлення 1720 шт:
термін постачання 14-30 дні (днів)
36+12.76 грн
56+7.62 грн
100+5.06 грн
500+4.00 грн
1000+3.65 грн
Мінімальне замовлення: 36 шт
В кошику  од. на суму  грн.
DLP05LC-7-F DLP05LC-7-F DIODES INCORPORATED ds30283.pdf Category: Unidirectional TVS SMD diodes
Description: Diode: TVS; 300W; 6V; 17A; unidirectional; SOT23; Ch: 1; reel,tape
Case: SOT23
Mounting: SMD
Kind of package: reel; tape
Number of channels: 1
Max. off-state voltage: 5V
Semiconductor structure: unidirectional
Leakage current: 20µA
Type of diode: TVS
Breakdown voltage: 6V
Max. forward impulse current: 17A
Peak pulse power dissipation: 0.3kW
на замовлення 6000 шт:
термін постачання 14-30 дні (днів)
17+28.26 грн
23+18.62 грн
27+16.08 грн
50+12.02 грн
100+10.75 грн
500+8.38 грн
1000+8.13 грн
1500+7.87 грн
3000+7.53 грн
Мінімальне замовлення: 17 шт
В кошику  од. на суму  грн.
P4SMAJ6.0ADF-13 DIODES INCORPORATED P4SMAJ50ADF_P4SMAJ85ADF.pdf Category: Unidirectional TVS SMD diodes
Description: Diode: TVS; 0.4kW; 6.67÷7.37V; 38.8A; unidirectional; D-FLAT
Type of diode: TVS
Peak pulse power dissipation: 0.4kW
Max. off-state voltage: 6V
Breakdown voltage: 6.67...7.37V
Max. forward impulse current: 38.8A
Semiconductor structure: unidirectional
Case: D-FLAT
Mounting: SMD
Leakage current: 0.4mA
Features of semiconductor devices: glass passivated
Kind of package: reel; tape
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AL9910A-5S-13 AL9910A-5S-13 DIODES INCORPORATED AL9910_A.pdf Category: LED drivers
Description: IC: driver; LED driver; SO8; 10mA; Ch: 1; PWM,linear dimming; 90%
Type of integrated circuit: driver
Kind of integrated circuit: LED driver
Case: SO8
Number of channels: 1
Integrated circuit features: linear dimming; PWM
Mounting: SMD
Operating temperature: -40...105°C
Operating voltage: 20...500V DC
Kind of package: reel; tape
Efficiency: 90%
Output current: 10mA
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AL9910-5S-13 AL9910-5S-13 DIODES INCORPORATED AL9910_A.pdf Category: LED drivers
Description: IC: driver; LED driver; SO8; Ch: 1; PWM,linear dimming; 7.5VDC; 90%
Type of integrated circuit: driver
Kind of integrated circuit: LED driver
Case: SO8
Number of channels: 1
Integrated circuit features: linear dimming; PWM
Mounting: SMD
Operating temperature: -40...105°C
Operating voltage: 7.5V DC
Kind of package: reel; tape
Efficiency: 90%
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1SMB5928B-13 1SMB59xxB_ser.pdf
1SMB5928B-13
Виробник: DIODES INCORPORATED
Category: SMD Zener diodes
Description: Diode: Zener; 3W; 13V; SMD; SMB; single diode; reel,tape
Type of diode: Zener
Power dissipation: 3W
Zener voltage: 13V
Mounting: SMD
Tolerance: ±5%
Case: SMB
Semiconductor structure: single diode
Kind of package: reel; tape
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1SMB5920B-13 1SMB59xxB_ser.pdf
1SMB5920B-13
Виробник: DIODES INCORPORATED
Category: SMD Zener diodes
Description: Diode: Zener; 3W; 6.2V; SMD; SMB; single diode; reel,tape
Type of diode: Zener
Power dissipation: 3W
Zener voltage: 6.2V
Mounting: SMD
Tolerance: ±5%
Case: SMB
Semiconductor structure: single diode
Kind of package: reel; tape
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MMDT2227Q-7-F MMDT2227Q.pdf
MMDT2227Q-7-F
Виробник: DIODES INCORPORATED
Category: Complementary transistors
Description: Transistor: NPN / PNP; bipolar; complementary pair; 40/60V; 0.6A
Type of transistor: NPN / PNP
Polarisation: bipolar
Collector-emitter voltage: 40/60V
Collector current: 0.6A
Power dissipation: 0.2W
Case: SOT363
Current gain: 35...300
Mounting: SMD
Kind of package: reel; tape
Frequency: 300MHz
Manufacturer standard package: 3000pcs.
Kind of transistor: complementary pair
Application: automotive industry
на замовлення 2968 шт:
термін постачання 14-30 дні (днів)
КількістьЦіна без ПДВ
19+24.61 грн
28+15.66 грн
100+8.82 грн
500+6.18 грн
1000+5.42 грн
Мінімальне замовлення: 19 шт
В кошику  од. на суму  грн.
MMDT2227-7-F MMDT2227.pdf
MMDT2227-7-F
Виробник: DIODES INCORPORATED
Category: Complementary transistors
Description: Transistor: NPN / PNP; bipolar; complementary pair; 40/60V; 0.6A
Type of transistor: NPN / PNP
Polarisation: bipolar
Collector-emitter voltage: 40/60V
Collector current: 0.6A
Power dissipation: 0.2W
Case: SOT363
Current gain: 35...300
Mounting: SMD
Kind of package: reel; tape
Frequency: 300MHz
Manufacturer standard package: 3000pcs.
Kind of transistor: complementary pair
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MMDT2227M-7 ds30718.pdf
MMDT2227M-7
Виробник: DIODES INCORPORATED
Category: Complementary transistors
Description: Transistor: NPN / PNP; bipolar; complementary pair; 40/60V; 0.6A
Type of transistor: NPN / PNP
Polarisation: bipolar
Collector-emitter voltage: 40/60V
Collector current: 0.6A
Power dissipation: 0.3W
Case: SOT26
Current gain: 35...300
Mounting: SMD
Kind of package: reel; tape
Frequency: 300MHz
Manufacturer standard package: 3000pcs.
Kind of transistor: complementary pair
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SMAJ40AQ-13-F SMAJ5.0CAQ-SMAJ200CAQ.pdf
SMAJ40AQ-13-F
Виробник: DIODES INCORPORATED
Category: Unidirectional TVS SMD diodes
Description: Diode: TVS; 0.4kW; 44.4÷49.1V; 6.2A; unidirectional; SMA; reel,tape
Type of diode: TVS
Peak pulse power dissipation: 0.4kW
Max. off-state voltage: 40V
Breakdown voltage: 44.4...49.1V
Max. forward impulse current: 6.2A
Semiconductor structure: unidirectional
Case: SMA
Mounting: SMD
Leakage current: 5µA
Features of semiconductor devices: glass passivated
Kind of package: reel; tape
Application: automotive industry
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ZVN0124A ZVN0124A.pdf
ZVN0124A
Виробник: DIODES INCORPORATED
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 240V; 0.16A; Idm: 2A; 0.7W; TO92
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 240V
Drain current: 0.16A
Pulsed drain current: 2A
Power dissipation: 0.7W
Case: TO92
Gate-source voltage: ±20V
On-state resistance: 16Ω
Mounting: THT
Kind of package: bulk
Kind of channel: enhancement
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74AUP1G09FS3-7 74AUP1G09.pdf
Виробник: DIODES INCORPORATED
Category: Gates, inverters
Description: IC: digital; AND; Ch: 1; IN: 2; CMOS; SMD; X2-DFN0808-4; -40÷150°C
Type of integrated circuit: digital
Kind of gate: AND
Number of channels: 1
Number of inputs: 2
Technology: CMOS
Mounting: SMD
Case: X2-DFN0808-4
Supply voltage: 0.8...3.6V DC
Operating temperature: -40...150°C
Kind of package: reel; tape
Kind of output: push-pull
Family: AUP
Kind of input: with Schmitt trigger
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74AUP1G09FW4-7 74AUP1G09.pdf
Виробник: DIODES INCORPORATED
Category: Gates, inverters
Description: IC: digital; AND; Ch: 1; IN: 2; CMOS; SMD; X2-DFN1010-6; 0.8÷3.6VDC
Type of integrated circuit: digital
Kind of gate: AND
Number of channels: 1
Number of inputs: 2
Technology: CMOS
Mounting: SMD
Case: X2-DFN1010-6
Supply voltage: 0.8...3.6V DC
Operating temperature: -40...150°C
Kind of package: reel; tape
Kind of output: open drain
Family: AUP
Kind of input: with Schmitt trigger
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74AUP1G09FW5-7 74AUP1G09.pdf
Виробник: DIODES INCORPORATED
Category: Gates, inverters
Description: IC: digital; AND; Ch: 1; IN: 2; CMOS; SMD; X1-DFN1010-6; 0.8÷3.6VDC
Type of integrated circuit: digital
Kind of gate: AND
Number of channels: 1
Number of inputs: 2
Technology: CMOS
Mounting: SMD
Case: X1-DFN1010-6
Supply voltage: 0.8...3.6V DC
Operating temperature: -40...150°C
Kind of package: reel; tape
Kind of output: open drain
Family: AUP
Kind of input: with Schmitt trigger
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74AUP1G09FX4-7 74AUP1G09.pdf
Виробник: DIODES INCORPORATED
Category: Gates, inverters
Description: IC: digital; AND; Ch: 1; IN: 2; CMOS; SMD; X2-DFN1409-6; 0.8÷3.6VDC
Type of integrated circuit: digital
Kind of gate: AND
Number of channels: 1
Number of inputs: 2
Technology: CMOS
Mounting: SMD
Case: X2-DFN1409-6
Supply voltage: 0.8...3.6V DC
Operating temperature: -40...150°C
Kind of package: reel; tape
Kind of output: open drain
Family: AUP
Kind of input: with Schmitt trigger
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74LVC1G11FW4-7 74LVC1G11.pdf
Виробник: DIODES INCORPORATED
Category: Gates, inverters
Description: IC: digital; AND; Ch: 1; IN: 3; CMOS; SMD; X2-DFN1010-6; 1.65÷5.5VDC
Type of integrated circuit: digital
Kind of gate: AND
Number of channels: 1
Number of inputs: 3
Technology: CMOS
Mounting: SMD
Case: X2-DFN1010-6
Supply voltage: 1.65...5.5V DC
Operating temperature: -40...150°C
Kind of package: reel; tape
Family: LVC
Kind of output: push-pull
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74LVC1G11FZ4-7 74LVC1G11.pdf
Виробник: DIODES INCORPORATED
Category: Gates, inverters
Description: IC: digital; AND; Ch: 1; IN: 3; CMOS; SMD; X2-DFN1410-6; 1.65÷5.5VDC
Type of integrated circuit: digital
Kind of gate: AND
Number of channels: 1
Number of inputs: 3
Technology: CMOS
Mounting: SMD
Case: X2-DFN1410-6
Supply voltage: 1.65...5.5V DC
Operating temperature: -40...150°C
Kind of package: reel; tape
Family: LVC
Kind of output: push-pull
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74LVC1G11W6-7 74LVC1G11.pdf
74LVC1G11W6-7
Виробник: DIODES INCORPORATED
Category: Gates, inverters
Description: IC: digital; AND; Ch: 1; IN: 3; CMOS; SMD; SOT26; 1.65÷5.5VDC; LVC
Type of integrated circuit: digital
Kind of gate: AND
Number of channels: 1
Number of inputs: 3
Technology: CMOS
Mounting: SMD
Case: SOT26
Supply voltage: 1.65...5.5V DC
Operating temperature: -40...150°C
Kind of package: reel; tape
Family: LVC
Kind of output: push-pull
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74LVC2G08HD4-7 74LVC2G08.pdf
Виробник: DIODES INCORPORATED
Category: Gates, inverters
Description: IC: digital; AND; Ch: 2; IN: 2; CMOS; SMD; X2-DFN2010-8; 1.65÷5.5VDC
Type of integrated circuit: digital
Kind of gate: AND
Number of channels: 2
Number of inputs: 2
Kind of output: push-pull
Operating temperature: -40...150°C
Technology: CMOS
Kind of input: with Schmitt trigger
Kind of package: reel; tape
Case: X2-DFN2010-8
Family: LVC
Mounting: SMD
Supply voltage: 1.65...5.5V DC
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74LVC2G08HK3-7 74LVC2G08.pdf
Виробник: DIODES INCORPORATED
Category: Gates, inverters
Description: IC: digital; AND; Ch: 2; IN: 4; CMOS; SMD; X2-DFN1410-8; 1.65÷5.5VDC
Type of integrated circuit: digital
Kind of gate: AND
Number of channels: 2
Number of inputs: 4
Kind of output: push-pull
Operating temperature: -40...150°C
Technology: CMOS
Kind of input: with Schmitt trigger
Kind of package: reel; tape
Case: X2-DFN1410-8
Family: LVC
Mounting: SMD
Supply voltage: 1.65...5.5V DC
товару немає в наявності
Мінімальне замовлення: 5000 шт
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74LVC2G08RA3-7 74LVC2G08.pdf
Виробник: DIODES INCORPORATED
Category: Gates, inverters
Description: IC: digital; AND; Ch: 2; IN: 2; CMOS; SMD; X2-DFN1210-8; 1.65÷5.5VDC
Type of integrated circuit: digital
Kind of gate: AND
Number of channels: 2
Number of inputs: 2
Kind of output: push-pull
Operating temperature: -40...150°C
Technology: CMOS
Kind of input: with Schmitt trigger
Kind of package: reel; tape
Case: X2-DFN1210-8
Family: LVC
Mounting: SMD
Supply voltage: 1.65...5.5V DC
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DMP2305U-7 DMP2305.pdf
DMP2305U-7
Виробник: DIODES INCORPORATED
Category: SMD P channel transistors
Description: Transistor: P-MOSFET; unipolar; -20V; -4.2A; 1.4W; SOT23
Polarisation: unipolar
Drain current: -4.2A
Kind of channel: enhancement
Drain-source voltage: -20V
Type of transistor: P-MOSFET
Gate-source voltage: ±8V
Kind of package: 7 inch reel; tape
Case: SOT23
On-state resistance: 60mΩ
Mounting: SMD
Power dissipation: 1.4W
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DMP2305UQ-7 DMP2305UQ_Rev1-3_Feb2022.pdf
DMP2305UQ-7
Виробник: DIODES INCORPORATED
Category: SMD P channel transistors
Description: Transistor: P-MOSFET; unipolar; -20V; -3.4A; Idm: -10A; 1.4W; SOT23
Polarisation: unipolar
Drain current: -3.4A
Kind of channel: enhancement
Drain-source voltage: -20V
Application: automotive industry
Type of transistor: P-MOSFET
Gate-source voltage: ±8V
Kind of package: 7 inch reel; tape
Case: SOT23
On-state resistance: 113mΩ
Mounting: SMD
Pulsed drain current: -10A
Power dissipation: 1.4W
Gate charge: 7.6nC
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DMP2305UVT-7 DMP2305UVT.pdf
DMP2305UVT-7
Виробник: DIODES INCORPORATED
Category: SMD P channel transistors
Description: Transistor: P-MOSFET; unipolar; -20V; -2.98A; Idm: -16A; 1.64W
Polarisation: unipolar
Drain current: -2.98A
Kind of channel: enhancement
Drain-source voltage: -20V
Type of transistor: P-MOSFET
Gate-source voltage: ±8V
Kind of package: 7 inch reel; tape
Case: TSOT26
On-state resistance: 113mΩ
Mounting: SMD
Pulsed drain current: -16A
Power dissipation: 1.64W
Gate charge: 7.6nC
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DMP32D4SFB-7B DMP32D4SFB.pdf
DMP32D4SFB-7B
Виробник: DIODES INCORPORATED
Category: SMD P channel transistors
Description: Transistor: P-MOSFET; unipolar; -30V; -0.4A; 0.5W; X1-DFN1006-3
Type of transistor: P-MOSFET
Polarisation: unipolar
Drain-source voltage: -30V
Drain current: -400mA
Power dissipation: 0.5W
Case: X1-DFN1006-3
Gate-source voltage: ±20V
On-state resistance: 2.4Ω
Mounting: SMD
Kind of package: 7 inch reel; tape
Kind of channel: enhancement
Version: ESD
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DT1042-04SO-7
Виробник: DIODES INCORPORATED
Category: Protection diodes - arrays
Description: Diode: TVS array
Type of diode: TVS array
Mounting: SMD
товару немає в наявності
Мінімальне замовлення: 3000 шт
В кошику  од. на суму  грн.
DDZ9707-7 ds30410.pdf
DDZ9707-7
Виробник: DIODES INCORPORATED
Category: SMD Zener diodes
Description: Diode: Zener; 0.5W; 20V; SMD; SOD123; single diode; reel,tape
Tolerance: ±5%
Mounting: SMD
Power dissipation: 0.5W
Kind of package: reel; tape
Semiconductor structure: single diode
Case: SOD123
Zener voltage: 20V
Type of diode: Zener
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DDZ9707S-7 ds30409.pdf
DDZ9707S-7
Виробник: DIODES INCORPORATED
Category: SMD Zener diodes
Description: Diode: Zener; 0.2W; 20V; SMD; SOD323; single diode; reel,tape
Mounting: SMD
Power dissipation: 0.2W
Kind of package: reel; tape
Semiconductor structure: single diode
Case: SOD323
Zener voltage: 20V
Type of diode: Zener
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DDZ9707T-7 ds30553.pdf
DDZ9707T-7
Виробник: DIODES INCORPORATED
Category: SMD Zener diodes
Description: Diode: Zener; 0.15W; 20V; SMD; SOD523; single diode; reel,tape
Tolerance: ±5%
Mounting: SMD
Power dissipation: 0.15W
Kind of package: reel; tape
Semiconductor structure: single diode
Case: SOD523
Zener voltage: 20V
Type of diode: Zener
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ZTX551 ZTX550.pdf
ZTX551
Виробник: DIODES INCORPORATED
Category: PNP THT transistors
Description: Transistor: PNP; bipolar; 60V; 1A; 1W; TO92
Type of transistor: PNP
Polarisation: bipolar
Collector-emitter voltage: 60V
Collector current: 1A
Power dissipation: 1W
Case: TO92
Mounting: THT
Kind of package: bulk
Frequency: 150MHz
Manufacturer standard package: 4000pcs.
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ZTX551STZ ZTX550.pdf
ZTX551STZ
Виробник: DIODES INCORPORATED
Category: PNP THT transistors
Description: Transistor: PNP; bipolar; 60V; 1A; 1W; TO92
Type of transistor: PNP
Polarisation: bipolar
Collector-emitter voltage: 60V
Collector current: 1A
Power dissipation: 1W
Case: TO92
Mounting: THT
Kind of package: Ammo Pack
Frequency: 150MHz
Manufacturer standard package: 2000pcs.
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SMAJ60AQ-13-F SMAJ5.0CAQ-SMAJ200CAQ.pdf
SMAJ60AQ-13-F
Виробник: DIODES INCORPORATED
Category: Unidirectional TVS SMD diodes
Description: Diode: TVS; 0.4kW; 66.7÷73.7V; 4.1A; unidirectional; SMA; reel,tape
Type of diode: TVS
Peak pulse power dissipation: 0.4kW
Max. off-state voltage: 60V
Breakdown voltage: 66.7...73.7V
Max. forward impulse current: 4.1A
Semiconductor structure: unidirectional
Case: SMA
Mounting: SMD
Leakage current: 5µA
Features of semiconductor devices: glass passivated
Kind of package: reel; tape
Application: automotive industry
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P4SMAJ60ADF-13 P4SMAJ50ADF_P4SMAJ85ADF.pdf
Виробник: DIODES INCORPORATED
Category: Unidirectional TVS SMD diodes
Description: Diode: TVS; 0.4kW; 66.7÷73.7V; 4.1A; unidirectional; D-FLAT
Type of diode: TVS
Mounting: SMD
Max. off-state voltage: 60V
Semiconductor structure: unidirectional
Case: D-FLAT
Max. forward impulse current: 4.1A
Kind of package: reel; tape
Peak pulse power dissipation: 0.4kW
Features of semiconductor devices: glass passivated
Leakage current: 1µA
Breakdown voltage: 66.7...73.7V
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SBR3045CTB-13 SBR3045CTB.pdf
SBR3045CTB-13
Виробник: DIODES INCORPORATED
Category: SMD universal diodes
Description: Diode: rectifying; SMD; 45V; 15Ax2; D2PAK; Ufmax: 700mV; SBR®
Type of diode: rectifying
Mounting: SMD
Max. off-state voltage: 45V
Load current: 15A x2
Semiconductor structure: common cathode; double
Case: D2PAK
Max. forward voltage: 0.7V
Kind of package: reel; tape
Technology: SBR®
Max. load current: 30A
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SMAJ51AQ-13-F SMAJ5.0CAQ-SMAJ200CAQ.pdf
SMAJ51AQ-13-F
Виробник: DIODES INCORPORATED
Category: Unidirectional TVS SMD diodes
Description: Diode: TVS; 0.4kW; 56.7÷62.7V; 4.9A; unidirectional; SMA; reel,tape
Type of diode: TVS
Peak pulse power dissipation: 0.4kW
Max. off-state voltage: 51V
Breakdown voltage: 56.7...62.7V
Max. forward impulse current: 4.9A
Semiconductor structure: unidirectional
Case: SMA
Mounting: SMD
Leakage current: 5µA
Features of semiconductor devices: glass passivated
Kind of package: reel; tape
Application: automotive industry
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SMCJ22A-13-F SMCJ_ser.pdf
SMCJ22A-13-F
Виробник: DIODES INCORPORATED
Category: Unidirectional TVS SMD diodes
Description: Diode: TVS; 1.5kW; 24.4÷27V; 42.2A; unidirectional; SMC; reel,tape
Type of diode: TVS
Peak pulse power dissipation: 1.5kW
Max. off-state voltage: 22V
Breakdown voltage: 24.4...27V
Max. forward impulse current: 42.2A
Semiconductor structure: unidirectional
Case: SMC
Mounting: SMD
Leakage current: 5µA
Features of semiconductor devices: glass passivated
Kind of package: reel; tape
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SMCJ22AQ-13-F SMCJ5.0CAQ_SMCJ110CAQ.pdf
SMCJ22AQ-13-F
Виробник: DIODES INCORPORATED
Category: Unidirectional TVS SMD diodes
Description: Diode: TVS; 1.5kW; 24.4÷27V; 42.2A; unidirectional; SMC; reel,tape
Type of diode: TVS
Peak pulse power dissipation: 1.5kW
Max. off-state voltage: 22V
Breakdown voltage: 24.4...27V
Max. forward impulse current: 42.2A
Semiconductor structure: unidirectional
Case: SMC
Mounting: SMD
Leakage current: 5µA
Features of semiconductor devices: glass passivated
Application: automotive industry
Kind of package: reel; tape
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3.0SMCJ22A-13 3.0SMCJxx.pdf
3.0SMCJ22A-13
Виробник: DIODES INCORPORATED
Category: Unidirectional TVS SMD diodes
Description: Diode: TVS; 3kW; 24.4÷27V; 84.5A; unidirectional; SMC; reel,tape
Type of diode: TVS
Peak pulse power dissipation: 3kW
Max. off-state voltage: 22V
Breakdown voltage: 24.4...27V
Max. forward impulse current: 84.5A
Semiconductor structure: unidirectional
Case: SMC
Mounting: SMD
Leakage current: 5µA
Features of semiconductor devices: glass passivated
Kind of package: reel; tape
товару немає в наявності
Мінімальне замовлення: 3000 шт
В кошику  од. на суму  грн.
DMN1001UCA10-7 DMN1001UCA10.pdf
Виробник: DIODES INCORPORATED
Category: Multi channel transistors
Description: Transistor: N-MOSFET x2; unipolar; 12V; 16A; Idm: 90A; 2.4W
Mounting: SMD
Pulsed drain current: 90A
Power dissipation: 2.4W
Gate charge: 29nC
Polarisation: unipolar
Drain current: 16A
Kind of channel: enhancement
Drain-source voltage: 12V
Type of transistor: N-MOSFET x2
Gate-source voltage: ±8V
Kind of package: 7 inch reel; tape
Case: X2-TSN1820-10
On-state resistance: 6.9mΩ
товару немає в наявності
Мінімальне замовлення: 3000 шт
В кошику  од. на суму  грн.
AL5809-50S1-7 AL5809-DTE.pdf
AL5809-50S1-7
Виробник: DIODES INCORPORATED
Category: LED drivers
Description: IC: driver; current regulator,LED driver; SOD123; 50mA; Ch: 1
Type of integrated circuit: driver
Kind of integrated circuit: current regulator; LED driver
Case: SOD123
Output current: 50mA
Number of channels: 1
Integrated circuit features: linear dimming; PWM
Mounting: SMD
Operating temperature: -40...125°C
Operating voltage: 2.5...60V DC
Kind of package: reel; tape
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AL5809-50QP1-7 AL5809Q.pdf
AL5809-50QP1-7
Виробник: DIODES INCORPORATED
Category: LED drivers
Description: IC: driver; current regulator,LED driver; PowerDI®123; 50mA; Ch: 1
Type of integrated circuit: driver
Kind of integrated circuit: current regulator; LED driver
Case: PowerDI®123
Output current: 50mA
Number of channels: 1
Integrated circuit features: linear dimming; PWM
Mounting: SMD
Operating temperature: -40...105°C
Operating voltage: 2.5...60V DC
Kind of package: reel; tape
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SDT10A45P5-7 SDT10A45P5.pdf
Виробник: DIODES INCORPORATED
Category: SMD Schottky diodes
Description: Diode: Schottky rectifying; PowerDI®5; SMD; 45V; 10A; reel,tape
Type of diode: Schottky rectifying
Max. off-state voltage: 45V
Max. forward impulse current: 180A
Semiconductor structure: single diode
Case: PowerDI®5
Mounting: SMD
Leakage current: 80mA
Kind of package: reel; tape
Max. forward voltage: 0.47V
Load current: 10A
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SDT10A45P5-13 SDT10A45P5.pdf
Виробник: DIODES INCORPORATED
Category: SMD Schottky diodes
Description: Diode: Schottky rectifying; PowerDI®5; SMD; 45V; 10A; reel,tape
Type of diode: Schottky rectifying
Max. off-state voltage: 45V
Max. forward impulse current: 180A
Semiconductor structure: single diode
Case: PowerDI®5
Mounting: SMD
Leakage current: 80mA
Kind of package: reel; tape
Max. forward voltage: 0.47V
Load current: 10A
товару немає в наявності
Мінімальне замовлення: 5000 шт
В кошику  од. на суму  грн.
SDT10A100P5-13 SDT10A100P5.pdf
Виробник: DIODES INCORPORATED
Category: SMD Schottky diodes
Description: Diode: Schottky rectifying; PowerDI®5; SMD; 100V; 10A; reel,tape
Type of diode: Schottky rectifying
Max. off-state voltage: 0.1kV
Max. forward impulse current: 0.24kA
Semiconductor structure: single diode
Case: PowerDI®5
Mounting: SMD
Leakage current: 20mA
Kind of package: reel; tape
Max. forward voltage: 0.68V
Load current: 10A
товару немає в наявності
Мінімальне замовлення: 5000 шт
В кошику  од. на суму  грн.
SMCJ13A-13-F SMCJ_ser.pdf
SMCJ13A-13-F
Виробник: DIODES INCORPORATED
Category: Unidirectional TVS SMD diodes
Description: Diode: TVS; 1.5kW; 14.4÷15.9V; 69.7A; unidirectional; SMC
Type of diode: TVS
Peak pulse power dissipation: 1.5kW
Max. off-state voltage: 13V
Breakdown voltage: 14.4...15.9V
Max. forward impulse current: 69.7A
Semiconductor structure: unidirectional
Case: SMC
Mounting: SMD
Leakage current: 5µA
Features of semiconductor devices: glass passivated
Kind of package: reel; tape
товару немає в наявності
Мінімальне замовлення: 3000 шт
В кошику  од. на суму  грн.
DMN3065LW-7 DMN3065LW.pdf
DMN3065LW-7
Виробник: DIODES INCORPORATED
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 30V; 4A; 0.77W; SOT323
Polarisation: unipolar
Mounting: SMD
Power dissipation: 0.77W
Drain current: 4A
Kind of channel: enhancement
Drain-source voltage: 30V
Type of transistor: N-MOSFET
Gate-source voltage: ±12V
Kind of package: 7 inch reel; tape
Case: SOT323
On-state resistance: 85mΩ
на замовлення 1748 шт:
термін постачання 14-30 дні (днів)
КількістьЦіна без ПДВ
15+31.91 грн
20+21.33 грн
50+14.48 грн
100+12.19 грн
500+8.63 грн
1000+7.70 грн
Мінімальне замовлення: 15 шт
В кошику  од. на суму  грн.
2DB1386Q-13 ds31147.pdf
2DB1386Q-13
Виробник: DIODES INCORPORATED
Category: PNP SMD transistors
Description: Transistor: PNP; bipolar; 20V; 5A; 1W; SOT89; automotive industry
Frequency: 100MHz
Polarisation: bipolar
Pulsed collector current: 10A
Application: automotive industry
Type of transistor: PNP
Current gain: 120...270
Kind of package: reel; tape
Case: SOT89
Collector current: 5A
Mounting: SMD
Manufacturer standard package: 2500pcs.
Collector-emitter voltage: 20V
Power dissipation: 1W
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2DB1386R-13 ds31147.pdf
2DB1386R-13
Виробник: DIODES INCORPORATED
Category: PNP SMD transistors
Description: Transistor: PNP; bipolar; 20V; 5A; 1W; SOT89
Frequency: 100MHz
Polarisation: bipolar
Pulsed collector current: 10A
Type of transistor: PNP
Current gain: 180...390
Kind of package: reel; tape
Case: SOT89
Collector current: 5A
Mounting: SMD
Manufacturer standard package: 2500pcs.
Collector-emitter voltage: 20V
Power dissipation: 1W
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SMBJ60A-13-F ds19002.pdf
SMBJ60A-13-F
Виробник: DIODES INCORPORATED
Category: Unidirectional TVS SMD diodes
Description: Diode: TVS; 0.6kW; 66.7÷76.7V; 6.2A; unidirectional; SMB; reel,tape
Type of diode: TVS
Peak pulse power dissipation: 0.6kW
Max. off-state voltage: 60V
Breakdown voltage: 66.7...76.7V
Max. forward impulse current: 6.2A
Semiconductor structure: unidirectional
Case: SMB
Mounting: SMD
Leakage current: 5µA
Features of semiconductor devices: glass passivated
Kind of package: reel; tape
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SMCJ160CA-13-F SMCJ_ser.pdf
SMCJ160CA-13-F
Виробник: DIODES INCORPORATED
Category: Bidirectional TVS SMD diodes
Description: Diode: TVS; 1.5kW; 178÷197V; 5.8A; bidirectional; SMC; reel,tape
Type of diode: TVS
Peak pulse power dissipation: 1.5kW
Max. off-state voltage: 160V
Breakdown voltage: 178...197V
Max. forward impulse current: 5.8A
Semiconductor structure: bidirectional
Case: SMC
Mounting: SMD
Leakage current: 5µA
Features of semiconductor devices: glass passivated
Kind of package: reel; tape
товару немає в наявності
Мінімальне замовлення: 3 шт
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SMBJ78A-13-F SMBJ_ser.pdf
SMBJ78A-13-F
Виробник: DIODES INCORPORATED
Category: Unidirectional TVS SMD diodes
Description: Diode: TVS; 0.6kW; 86.7÷99.7V; 4.7A; unidirectional; SMB; reel,tape
Type of diode: TVS
Peak pulse power dissipation: 0.6kW
Max. off-state voltage: 78V
Breakdown voltage: 86.7...99.7V
Max. forward impulse current: 4.7A
Semiconductor structure: unidirectional
Case: SMB
Mounting: SMD
Leakage current: 5µA
Features of semiconductor devices: glass passivated
Kind of package: reel; tape
товару немає в наявності
Мінімальне замовлення: 3000 шт
В кошику  од. на суму  грн.
BZX84B5V6-7-F BZX84Bxxx.pdf
BZX84B5V6-7-F
Виробник: DIODES INCORPORATED
Category: SMD Zener diodes
Description: Diode: Zener; 0.35W; 5.6V; SMD; SOT23; single diode; reel,tape
Type of diode: Zener
Semiconductor structure: single diode
Mounting: SMD
Case: SOT23
Tolerance: ±2%
Kind of package: reel; tape
Power dissipation: 0.35W
Zener voltage: 5.6V
товару немає в наявності
В кошику  од. на суму  грн.
MMBD914-7-F BAS16-7-DTE.pdf
MMBD914-7-F
Виробник: DIODES INCORPORATED
Category: SMD universal diodes
Description: Diode: switching; SMD; 75V; 0.2A; 4ns; SOT23; Ufmax: 1.25V; Ifsm: 2A
Type of diode: switching
Mounting: SMD
Max. off-state voltage: 75V
Load current: 0.2A
Reverse recovery time: 4ns
Semiconductor structure: single diode
Case: SOT23
Max. forward voltage: 1.25V
Max. forward impulse current: 2A
Kind of package: reel; tape
Features of semiconductor devices: small signal
Max. load current: 0.3A
Capacitance: 2pF
на замовлення 3573 шт:
термін постачання 14-30 дні (днів)
КількістьЦіна без ПДВ
50+9.12 грн
120+3.56 грн
161+2.64 грн
186+2.28 грн
500+1.57 грн
1000+1.36 грн
2000+1.23 грн
3000+1.16 грн
Мінімальне замовлення: 50 шт
В кошику  од. на суму  грн.
SMBJ6.5A-13-F SMBJ_ser.pdf
SMBJ6.5A-13-F
Виробник: DIODES INCORPORATED
Category: Unidirectional TVS SMD diodes
Description: Diode: TVS; 0.6kW; 7.22÷8.3V; 53.6A; unidirectional; SMB; reel,tape
Type of diode: TVS
Peak pulse power dissipation: 0.6kW
Max. off-state voltage: 6.5V
Breakdown voltage: 7.22...8.3V
Max. forward impulse current: 53.6A
Semiconductor structure: unidirectional
Case: SMB
Mounting: SMD
Leakage current: 0.5mA
Features of semiconductor devices: glass passivated
Kind of package: reel; tape
на замовлення 565 шт:
термін постачання 14-30 дні (днів)
КількістьЦіна без ПДВ
32+14.59 грн
35+12.19 грн
100+9.99 грн
500+7.03 грн
Мінімальне замовлення: 32 шт
В кошику  од. на суму  грн.
SMCJ28CA-13-F SMCJ_ser.pdf
SMCJ28CA-13-F
Виробник: DIODES INCORPORATED
Category: Bidirectional TVS SMD diodes
Description: Diode: TVS; 1.5kW; 31.1÷34.4V; 33A; bidirectional; SMC; reel,tape
Type of diode: TVS
Peak pulse power dissipation: 1.5kW
Max. off-state voltage: 28V
Breakdown voltage: 31.1...34.4V
Max. forward impulse current: 33A
Semiconductor structure: bidirectional
Case: SMC
Mounting: SMD
Leakage current: 5µA
Features of semiconductor devices: glass passivated
Kind of package: reel; tape
на замовлення 1259 шт:
термін постачання 14-30 дні (днів)
КількістьЦіна без ПДВ
12+40.11 грн
15+28.44 грн
75+23.96 грн
100+23.28 грн
500+19.64 грн
1000+17.95 грн
Мінімальне замовлення: 12 шт
В кошику  од. на суму  грн.
FMMT618TA FMMT618.pdf
FMMT618TA
Виробник: DIODES INCORPORATED
Category: NPN SMD transistors
Description: Transistor: NPN; bipolar; 20V; 2.5A; 806mW; SOT23
Type of transistor: NPN
Polarisation: bipolar
Collector-emitter voltage: 20V
Collector current: 2.5A
Power dissipation: 0.806W
Case: SOT23
Pulsed collector current: 6A
Current gain: 100...450
Mounting: SMD
Kind of package: reel; tape
Frequency: 100...140MHz
Manufacturer standard package: 3000pcs.
товару немає в наявності
В кошику  од. на суму  грн.
FMMT618TA FMMT618.pdf
FMMT618TA
Виробник: DIODES INCORPORATED
Category: NPN SMD transistors
Description: Transistor: NPN; bipolar; 20V; 2.5A; 806mW; SOT23
Type of transistor: NPN
Polarisation: bipolar
Collector-emitter voltage: 20V
Collector current: 2.5A
Power dissipation: 0.806W
Case: SOT23
Pulsed collector current: 6A
Mounting: SMD
Kind of package: reel; tape
Frequency: 140MHz
Quantity in set/package: 3000pcs.
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SMAZ5V6-13-F SMAZx-13-F.pdf
SMAZ5V6-13-F
Виробник: DIODES INCORPORATED
Category: SMD Zener diodes
Description: Diode: Zener; 1W; 5.6V; SMD; SMA; single diode; reel,tape
Type of diode: Zener
Power dissipation: 1W
Zener voltage: 5.6V
Case: SMA
Mounting: SMD
Tolerance: ±5%
Semiconductor structure: single diode
Kind of package: reel; tape
на замовлення 752 шт:
термін постачання 14-30 дні (днів)
КількістьЦіна без ПДВ
14+32.82 грн
21+20.49 грн
25+17.01 грн
100+10.16 грн
500+7.96 грн
Мінімальне замовлення: 14 шт
В кошику  од. на суму  грн.
DFLZ5V6-7 DFLZ-ser.pdf
DFLZ5V6-7
Виробник: DIODES INCORPORATED
Category: SMD Zener diodes
Description: Diode: Zener; 1W; 5.6V; SMD; PowerDI®123; single diode; reel,tape
Type of diode: Zener
Power dissipation: 1W
Zener voltage: 5.6V
Mounting: SMD
Tolerance: ±5%
Case: PowerDI®123
Semiconductor structure: single diode
Kind of package: reel; tape
товару немає в наявності
Мінімальне замовлення: 3000 шт
В кошику  од. на суму  грн.
2DD2652-7 2DD2652.pdf
2DD2652-7
Виробник: DIODES INCORPORATED
Category: NPN SMD transistors
Description: Transistor: NPN; bipolar; 12V; 1.5A; 300mW; SOT323
Polarisation: bipolar
Pulsed collector current: 3A
Type of transistor: NPN
Current gain: 270...680
Kind of package: reel; tape
Case: SOT323
Frequency: 260MHz
Collector current: 1.5A
Mounting: SMD
Manufacturer standard package: 3000pcs.
Collector-emitter voltage: 12V
Power dissipation: 0.3W
на замовлення 1720 шт:
термін постачання 14-30 дні (днів)
КількістьЦіна без ПДВ
36+12.76 грн
56+7.62 грн
100+5.06 грн
500+4.00 грн
1000+3.65 грн
Мінімальне замовлення: 36 шт
В кошику  од. на суму  грн.
DLP05LC-7-F ds30283.pdf
DLP05LC-7-F
Виробник: DIODES INCORPORATED
Category: Unidirectional TVS SMD diodes
Description: Diode: TVS; 300W; 6V; 17A; unidirectional; SOT23; Ch: 1; reel,tape
Case: SOT23
Mounting: SMD
Kind of package: reel; tape
Number of channels: 1
Max. off-state voltage: 5V
Semiconductor structure: unidirectional
Leakage current: 20µA
Type of diode: TVS
Breakdown voltage: 6V
Max. forward impulse current: 17A
Peak pulse power dissipation: 0.3kW
на замовлення 6000 шт:
термін постачання 14-30 дні (днів)
КількістьЦіна без ПДВ
17+28.26 грн
23+18.62 грн
27+16.08 грн
50+12.02 грн
100+10.75 грн
500+8.38 грн
1000+8.13 грн
1500+7.87 грн
3000+7.53 грн
Мінімальне замовлення: 17 шт
В кошику  од. на суму  грн.
P4SMAJ6.0ADF-13 P4SMAJ50ADF_P4SMAJ85ADF.pdf
Виробник: DIODES INCORPORATED
Category: Unidirectional TVS SMD diodes
Description: Diode: TVS; 0.4kW; 6.67÷7.37V; 38.8A; unidirectional; D-FLAT
Type of diode: TVS
Peak pulse power dissipation: 0.4kW
Max. off-state voltage: 6V
Breakdown voltage: 6.67...7.37V
Max. forward impulse current: 38.8A
Semiconductor structure: unidirectional
Case: D-FLAT
Mounting: SMD
Leakage current: 0.4mA
Features of semiconductor devices: glass passivated
Kind of package: reel; tape
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AL9910A-5S-13 AL9910_A.pdf
AL9910A-5S-13
Виробник: DIODES INCORPORATED
Category: LED drivers
Description: IC: driver; LED driver; SO8; 10mA; Ch: 1; PWM,linear dimming; 90%
Type of integrated circuit: driver
Kind of integrated circuit: LED driver
Case: SO8
Number of channels: 1
Integrated circuit features: linear dimming; PWM
Mounting: SMD
Operating temperature: -40...105°C
Operating voltage: 20...500V DC
Kind of package: reel; tape
Efficiency: 90%
Output current: 10mA
товару немає в наявності
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AL9910-5S-13 AL9910_A.pdf
AL9910-5S-13
Виробник: DIODES INCORPORATED
Category: LED drivers
Description: IC: driver; LED driver; SO8; Ch: 1; PWM,linear dimming; 7.5VDC; 90%
Type of integrated circuit: driver
Kind of integrated circuit: LED driver
Case: SO8
Number of channels: 1
Integrated circuit features: linear dimming; PWM
Mounting: SMD
Operating temperature: -40...105°C
Operating voltage: 7.5V DC
Kind of package: reel; tape
Efficiency: 90%
товару немає в наявності
В кошику  од. на суму  грн.
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