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ZTX551STZ ZTX551STZ DIODES INCORPORATED ZTX550.pdf Category: PNP THT transistors
Description: Transistor: PNP; bipolar; 60V; 1A; 1W; TO92
Type of transistor: PNP
Polarisation: bipolar
Collector-emitter voltage: 60V
Collector current: 1A
Power dissipation: 1W
Case: TO92
Mounting: THT
Kind of package: Ammo Pack
Frequency: 150MHz
Manufacturer standard package: 2000pcs.
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SMAJ60AQ-13-F SMAJ60AQ-13-F DIODES INCORPORATED SMAJ5.0CAQ-SMAJ200CAQ.pdf Category: Unidirectional TVS SMD diodes
Description: Diode: TVS; 0.4kW; 66.7÷73.7V; 4.1A; unidirectional; SMA; reel,tape
Type of diode: TVS
Peak pulse power dissipation: 0.4kW
Max. off-state voltage: 60V
Breakdown voltage: 66.7...73.7V
Max. forward impulse current: 4.1A
Semiconductor structure: unidirectional
Case: SMA
Mounting: SMD
Leakage current: 5µA
Features of semiconductor devices: glass passivated
Kind of package: reel; tape
Application: automotive industry
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P4SMAJ60ADF-13 DIODES INCORPORATED P4SMAJ50ADF_P4SMAJ85ADF.pdf Category: Unidirectional TVS SMD diodes
Description: Diode: TVS; 0.4kW; 66.7÷73.7V; 4.1A; unidirectional; D-FLAT
Type of diode: TVS
Peak pulse power dissipation: 0.4kW
Max. off-state voltage: 60V
Breakdown voltage: 66.7...73.7V
Max. forward impulse current: 4.1A
Semiconductor structure: unidirectional
Case: D-FLAT
Mounting: SMD
Leakage current: 1µA
Features of semiconductor devices: glass passivated
Kind of package: reel; tape
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SBR3045CTB-13 SBR3045CTB-13 DIODES INCORPORATED SBR3045CTB.pdf Category: SMD universal diodes
Description: Diode: rectifying; SMD; 45V; 15Ax2; D2PAK; Ufmax: 700mV; SBR®
Type of diode: rectifying
Mounting: SMD
Max. off-state voltage: 45V
Load current: 15A x2
Semiconductor structure: common cathode; double
Case: D2PAK
Max. forward voltage: 0.7V
Kind of package: reel; tape
Technology: SBR®
Max. load current: 30A
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SMAJ51AQ-13-F SMAJ51AQ-13-F DIODES INCORPORATED SMAJ5.0CAQ-SMAJ200CAQ.pdf Category: Unidirectional TVS SMD diodes
Description: Diode: TVS; 0.4kW; 56.7÷62.7V; 4.9A; unidirectional; SMA; reel,tape
Type of diode: TVS
Peak pulse power dissipation: 0.4kW
Max. off-state voltage: 51V
Breakdown voltage: 56.7...62.7V
Max. forward impulse current: 4.9A
Semiconductor structure: unidirectional
Case: SMA
Mounting: SMD
Leakage current: 5µA
Features of semiconductor devices: glass passivated
Kind of package: reel; tape
Application: automotive industry
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SMCJ22A-13-F SMCJ22A-13-F DIODES INCORPORATED SMCJ_ser.pdf Category: Unidirectional TVS SMD diodes
Description: Diode: TVS; 1.5kW; 24.4÷27V; 42.2A; unidirectional; SMC; reel,tape
Type of diode: TVS
Peak pulse power dissipation: 1.5kW
Max. off-state voltage: 22V
Breakdown voltage: 24.4...27V
Max. forward impulse current: 42.2A
Semiconductor structure: unidirectional
Case: SMC
Mounting: SMD
Leakage current: 5µA
Features of semiconductor devices: glass passivated
Kind of package: reel; tape
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SMCJ22AQ-13-F DIODES INCORPORATED SMCJ5.0CAQ_SMCJ110CAQ.pdf Category: Unidirectional TVS SMD diodes
Description: Diode: TVS; 1.5kW; 24.4÷27V; 42.2A; unidirectional; SMC; reel,tape
Type of diode: TVS
Peak pulse power dissipation: 1.5kW
Max. off-state voltage: 22V
Breakdown voltage: 24.4...27V
Max. forward impulse current: 42.2A
Semiconductor structure: unidirectional
Case: SMC
Mounting: SMD
Leakage current: 5µA
Features of semiconductor devices: glass passivated
Application: automotive industry
Kind of package: reel; tape
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3.0SMCJ22A-13 DIODES INCORPORATED 3.0SMCJxx.pdf Category: Unidirectional TVS SMD diodes
Description: Diode: TVS; 3kW; 24.4÷27V; 84.5A; unidirectional; SMC; reel,tape
Type of diode: TVS
Peak pulse power dissipation: 3kW
Max. off-state voltage: 22V
Breakdown voltage: 24.4...27V
Max. forward impulse current: 84.5A
Semiconductor structure: unidirectional
Case: SMC
Mounting: SMD
Leakage current: 5µA
Features of semiconductor devices: glass passivated
Kind of package: reel; tape
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 Мінімальне замовлення: 3000 шт
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DMN1001UCA10-7 DIODES INCORPORATED DMN1001UCA10.pdf Category: Multi channel transistors
Description: Transistor: N-MOSFET x2; unipolar; 12V; 16A; Idm: 90A; 2.4W
Mounting: SMD
Pulsed drain current: 90A
Power dissipation: 2.4W
Gate charge: 29nC
Polarisation: unipolar
Drain current: 16A
Kind of channel: enhancement
Drain-source voltage: 12V
Type of transistor: N-MOSFET x2
Gate-source voltage: ±8V
Kind of package: 7 inch reel; tape
Case: X2-TSN1820-10
On-state resistance: 6.9mΩ
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ZLLS1000TA ZLLS1000TA DIODES INCORPORATED ZLLS1000.pdf Category: SMD Schottky diodes
Description: Diode: Schottky rectifying; SOT23; SMD; 40V; 1.16A; reel,tape
Type of diode: Schottky rectifying
Case: SOT23
Mounting: SMD
Max. off-state voltage: 40V
Load current: 1.16A
Semiconductor structure: single diode
Capacitance: 28pF
Max. forward voltage: 0.56V
Max. forward impulse current: 6.4A
Kind of package: reel; tape
Power dissipation: 0.8W
на замовлення 448 шт:
термін постачання 14-30 дні (днів)
10+48.22 грн
13+33.08 грн
100+20.48 грн
150+18.82 грн
300+16.25 грн
Мінімальне замовлення: 10 шт
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AL5809-50S1-7 AL5809-50S1-7 DIODES INCORPORATED AL5809-DTE.pdf Category: LED drivers
Description: IC: driver; current regulator,LED driver; SOD123; 50mA; Ch: 1
Type of integrated circuit: driver
Kind of integrated circuit: current regulator; LED driver
Case: SOD123
Output current: 50mA
Number of channels: 1
Integrated circuit features: linear dimming; PWM
Mounting: SMD
Operating temperature: -40...125°C
Operating voltage: 2.5...60V DC
Kind of package: reel; tape
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AL5809-50QP1-7 AL5809-50QP1-7 DIODES INCORPORATED AL5809Q.pdf Category: LED drivers
Description: IC: driver; current regulator,LED driver; PowerDI®123; 50mA; Ch: 1
Type of integrated circuit: driver
Kind of integrated circuit: current regulator; LED driver
Case: PowerDI®123
Output current: 50mA
Number of channels: 1
Integrated circuit features: linear dimming; PWM
Mounting: SMD
Operating temperature: -40...105°C
Operating voltage: 2.5...60V DC
Kind of package: reel; tape
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SDT10A45P5-7 DIODES INCORPORATED SDT10A45P5.pdf Category: SMD Schottky diodes
Description: Diode: Schottky rectifying; PowerDI®5; SMD; 45V; 10A; reel,tape
Type of diode: Schottky rectifying
Max. off-state voltage: 45V
Max. forward impulse current: 180A
Semiconductor structure: single diode
Case: PowerDI®5
Mounting: SMD
Leakage current: 80mA
Kind of package: reel; tape
Max. forward voltage: 0.47V
Load current: 10A
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SDT10A45P5-13 DIODES INCORPORATED SDT10A45P5.pdf Category: SMD Schottky diodes
Description: Diode: Schottky rectifying; PowerDI®5; SMD; 45V; 10A; reel,tape
Type of diode: Schottky rectifying
Max. off-state voltage: 45V
Max. forward impulse current: 180A
Semiconductor structure: single diode
Case: PowerDI®5
Mounting: SMD
Leakage current: 80mA
Kind of package: reel; tape
Max. forward voltage: 0.47V
Load current: 10A
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SDT10A100P5-13 DIODES INCORPORATED SDT10A100P5.pdf Category: SMD Schottky diodes
Description: Diode: Schottky rectifying; PowerDI®5; SMD; 100V; 10A; reel,tape
Type of diode: Schottky rectifying
Max. off-state voltage: 0.1kV
Max. forward impulse current: 0.24kA
Semiconductor structure: single diode
Case: PowerDI®5
Mounting: SMD
Leakage current: 20mA
Kind of package: reel; tape
Max. forward voltage: 0.68V
Load current: 10A
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SMCJ13A-13-F SMCJ13A-13-F DIODES INCORPORATED SMCJ_ser.pdf Category: Unidirectional TVS SMD diodes
Description: Diode: TVS; 1.5kW; 14.4÷15.9V; 69.7A; unidirectional; SMC
Type of diode: TVS
Peak pulse power dissipation: 1.5kW
Max. off-state voltage: 13V
Breakdown voltage: 14.4...15.9V
Max. forward impulse current: 69.7A
Semiconductor structure: unidirectional
Case: SMC
Mounting: SMD
Leakage current: 5µA
Features of semiconductor devices: glass passivated
Kind of package: reel; tape
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 Мінімальне замовлення: 3000 шт
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DMN3065LW-7 DMN3065LW-7 DIODES INCORPORATED DMN3065LW.pdf Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 30V; 4A; 0.77W; SOT323
Polarisation: unipolar
Mounting: SMD
Power dissipation: 0.77W
Drain current: 4A
Kind of channel: enhancement
Drain-source voltage: 30V
Type of transistor: N-MOSFET
Gate-source voltage: ±12V
Kind of package: 7 inch reel; tape
Case: SOT323
On-state resistance: 85mΩ
на замовлення 1748 шт:
термін постачання 14-30 дні (днів)
15+31.25 грн
20+20.89 грн
50+14.18 грн
100+11.94 грн
500+8.46 грн
1000+7.54 грн
Мінімальне замовлення: 15 шт
В кошику  од. на суму  грн.
2DB1386Q-13 2DB1386Q-13 DIODES INCORPORATED ds31147.pdf Category: PNP SMD transistors
Description: Transistor: PNP; bipolar; 20V; 5A; 1W; SOT89; automotive industry
Frequency: 100MHz
Polarisation: bipolar
Pulsed collector current: 10A
Application: automotive industry
Type of transistor: PNP
Current gain: 120...270
Kind of package: reel; tape
Case: SOT89
Collector current: 5A
Mounting: SMD
Manufacturer standard package: 2500pcs.
Collector-emitter voltage: 20V
Power dissipation: 1W
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2DB1386R-13 2DB1386R-13 DIODES INCORPORATED ds31147.pdf Category: PNP SMD transistors
Description: Transistor: PNP; bipolar; 20V; 5A; 1W; SOT89
Frequency: 100MHz
Polarisation: bipolar
Pulsed collector current: 10A
Type of transistor: PNP
Current gain: 180...390
Kind of package: reel; tape
Case: SOT89
Collector current: 5A
Mounting: SMD
Manufacturer standard package: 2500pcs.
Collector-emitter voltage: 20V
Power dissipation: 1W
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SMBJ60A-13-F SMBJ60A-13-F DIODES INCORPORATED ds19002.pdf Category: Unidirectional TVS SMD diodes
Description: Diode: TVS; 0.6kW; 66.7÷76.7V; 6.2A; unidirectional; SMB; reel,tape
Type of diode: TVS
Peak pulse power dissipation: 0.6kW
Max. off-state voltage: 60V
Breakdown voltage: 66.7...76.7V
Max. forward impulse current: 6.2A
Semiconductor structure: unidirectional
Case: SMB
Mounting: SMD
Leakage current: 5µA
Features of semiconductor devices: glass passivated
Kind of package: reel; tape
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SMCJ160CA-13-F SMCJ160CA-13-F DIODES INCORPORATED SMCJ_ser.pdf Category: Bidirectional TVS SMD diodes
Description: Diode: TVS; 1.5kW; 178÷197V; 5.8A; bidirectional; SMC; reel,tape
Type of diode: TVS
Peak pulse power dissipation: 1.5kW
Max. off-state voltage: 160V
Breakdown voltage: 178...197V
Max. forward impulse current: 5.8A
Semiconductor structure: bidirectional
Case: SMC
Mounting: SMD
Leakage current: 5µA
Features of semiconductor devices: glass passivated
Kind of package: reel; tape
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 Мінімальне замовлення: 3 шт
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SMBJ78A-13-F SMBJ78A-13-F DIODES INCORPORATED SMBJ_ser.pdf Category: Unidirectional TVS SMD diodes
Description: Diode: TVS; 0.6kW; 86.7÷99.7V; 4.7A; unidirectional; SMB; reel,tape
Type of diode: TVS
Peak pulse power dissipation: 0.6kW
Max. off-state voltage: 78V
Breakdown voltage: 86.7...99.7V
Max. forward impulse current: 4.7A
Semiconductor structure: unidirectional
Case: SMB
Mounting: SMD
Leakage current: 5µA
Features of semiconductor devices: glass passivated
Kind of package: reel; tape
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 Мінімальне замовлення: 3000 шт
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BZX84B5V6-7-F BZX84B5V6-7-F DIODES INCORPORATED BZX84Bxxx.pdf Category: SMD Zener diodes
Description: Diode: Zener; 0.35W; 5.6V; SMD; SOT23; single diode; reel,tape
Type of diode: Zener
Power dissipation: 0.35W
Zener voltage: 5.6V
Mounting: SMD
Tolerance: ±2%
Case: SOT23
Semiconductor structure: single diode
Kind of package: reel; tape
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MMBD914-7-F MMBD914-7-F DIODES INCORPORATED BAS16-7-DTE.pdf Category: SMD universal diodes
Description: Diode: switching; SMD; 75V; 0.2A; 4ns; SOT23; Ufmax: 1.25V; Ifsm: 2A
Reverse recovery time: 4ns
Mounting: SMD
Max. forward impulse current: 2A
Max. forward voltage: 1.25V
Features of semiconductor devices: small signal
Max. off-state voltage: 75V
Load current: 0.2A
Max. load current: 0.3A
Kind of package: reel; tape
Semiconductor structure: single diode
Case: SOT23
Capacitance: 2pF
Type of diode: switching
на замовлення 3592 шт:
термін постачання 14-30 дні (днів)
50+8.93 грн
117+3.57 грн
159+2.62 грн
184+2.26 грн
500+1.57 грн
1000+1.36 грн
2000+1.22 грн
3000+1.15 грн
Мінімальне замовлення: 50 шт
В кошику  од. на суму  грн.
SMBJ6.5A-13-F SMBJ6.5A-13-F DIODES INCORPORATED SMBJ_ser.pdf Category: Unidirectional TVS SMD diodes
Description: Diode: TVS; 0.6kW; 7.22÷8.3V; 53.6A; unidirectional; SMB; reel,tape
Type of diode: TVS
Peak pulse power dissipation: 0.6kW
Max. off-state voltage: 6.5V
Breakdown voltage: 7.22...8.3V
Max. forward impulse current: 53.6A
Semiconductor structure: unidirectional
Case: SMB
Mounting: SMD
Leakage current: 0.5mA
Kind of package: reel; tape
Features of semiconductor devices: glass passivated
на замовлення 3565 шт:
термін постачання 14-30 дні (днів)
32+14.29 грн
35+11.94 грн
100+9.78 грн
500+6.88 грн
1000+6.14 грн
3000+5.80 грн
Мінімальне замовлення: 32 шт
В кошику  од. на суму  грн.
SMCJ28CA-13-F SMCJ28CA-13-F DIODES INCORPORATED SMCJ_ser.pdf Category: Bidirectional TVS SMD diodes
Description: Diode: TVS; 1.5kW; 31.1÷34.4V; 33A; bidirectional; SMC; reel,tape
Type of diode: TVS
Peak pulse power dissipation: 1.5kW
Max. off-state voltage: 28V
Breakdown voltage: 31.1...34.4V
Max. forward impulse current: 33A
Semiconductor structure: bidirectional
Case: SMC
Mounting: SMD
Leakage current: 5µA
Kind of package: reel; tape
Features of semiconductor devices: glass passivated
на замовлення 2479 шт:
термін постачання 14-30 дні (днів)
10+44.64 грн
16+27.11 грн
100+19.98 грн
500+17.08 грн
1000+15.42 грн
Мінімальне замовлення: 10 шт
В кошику  од. на суму  грн.
FMMT618TA FMMT618TA DIODES INCORPORATED FMMT618.pdf Category: NPN SMD transistors
Description: Transistor: NPN; bipolar; 20V; 2.5A; 806mW; SOT23
Type of transistor: NPN
Polarisation: bipolar
Collector-emitter voltage: 20V
Collector current: 2.5A
Power dissipation: 0.806W
Case: SOT23
Pulsed collector current: 6A
Current gain: 100...450
Mounting: SMD
Kind of package: reel; tape
Frequency: 100...140MHz
Manufacturer standard package: 3000pcs.
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FMMT618TA FMMT618TA DIODES INCORPORATED FMMT618.pdf Category: NPN SMD transistors
Description: Transistor: NPN; bipolar; 20V; 2.5A; 806mW; SOT23
Type of transistor: NPN
Polarisation: bipolar
Collector-emitter voltage: 20V
Collector current: 2.5A
Power dissipation: 0.806W
Case: SOT23
Pulsed collector current: 6A
Mounting: SMD
Kind of package: reel; tape
Frequency: 140MHz
Quantity in set/package: 3000pcs.
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SMAZ5V6-13-F SMAZ5V6-13-F DIODES INCORPORATED SMAZx-13-F.pdf Category: SMD Zener diodes
Description: Diode: Zener; 1W; 5.6V; SMD; SMA; single diode; reel,tape
Type of diode: Zener
Power dissipation: 1W
Zener voltage: 5.6V
Mounting: SMD
Tolerance: ±5%
Case: SMA
Semiconductor structure: single diode
Kind of package: reel; tape
на замовлення 4502 шт:
термін постачання 14-30 дні (днів)
14+32.14 грн
21+20.06 грн
25+16.67 грн
100+9.95 грн
500+7.79 грн
1000+7.05 грн
2000+6.47 грн
Мінімальне замовлення: 14 шт
В кошику  од. на суму  грн.
DFLZ5V6-7 DFLZ5V6-7 DIODES INCORPORATED DFLZ-ser.pdf Category: SMD Zener diodes
Description: Diode: Zener; 1W; 5.6V; SMD; PowerDI®123; single diode; reel,tape
Type of diode: Zener
Power dissipation: 1W
Zener voltage: 5.6V
Mounting: SMD
Tolerance: ±5%
Case: PowerDI®123
Semiconductor structure: single diode
Kind of package: reel; tape
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 Мінімальне замовлення: 3000 шт
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2DD2652-7 2DD2652-7 DIODES INCORPORATED 2DD2652.pdf Category: NPN SMD transistors
Description: Transistor: NPN; bipolar; 12V; 1.5A; 300mW; SOT323
Polarisation: bipolar
Pulsed collector current: 3A
Type of transistor: NPN
Current gain: 270...680
Kind of package: reel; tape
Case: SOT323
Frequency: 260MHz
Collector current: 1.5A
Mounting: SMD
Manufacturer standard package: 3000pcs.
Collector-emitter voltage: 12V
Power dissipation: 0.3W
на замовлення 1720 шт:
термін постачання 14-30 дні (днів)
36+12.50 грн
56+7.46 грн
100+4.96 грн
500+3.91 грн
1000+3.57 грн
Мінімальне замовлення: 36 шт
В кошику  од. на суму  грн.
DLP05LC-7-F DLP05LC-7-F DIODES INCORPORATED ds30283.pdf Category: Unidirectional TVS SMD diodes
Description: Diode: TVS; 300W; 6V; 17A; unidirectional; SOT23; Ch: 1; reel,tape
Type of diode: TVS
Peak pulse power dissipation: 0.3kW
Max. off-state voltage: 5V
Breakdown voltage: 6V
Max. forward impulse current: 17A
Semiconductor structure: unidirectional
Case: SOT23
Mounting: SMD
Leakage current: 20µA
Number of channels: 1
Kind of package: reel; tape
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P4SMAJ6.0ADF-13 DIODES INCORPORATED P4SMAJ50ADF_P4SMAJ85ADF.pdf Category: Unidirectional TVS SMD diodes
Description: Diode: TVS; 0.4kW; 6.67÷7.37V; 38.8A; unidirectional; D-FLAT
Type of diode: TVS
Peak pulse power dissipation: 0.4kW
Max. off-state voltage: 6V
Breakdown voltage: 6.67...7.37V
Max. forward impulse current: 38.8A
Semiconductor structure: unidirectional
Case: D-FLAT
Mounting: SMD
Leakage current: 0.4mA
Features of semiconductor devices: glass passivated
Kind of package: reel; tape
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AL9910A-5S-13 AL9910A-5S-13 DIODES INCORPORATED AL9910_A.pdf Category: LED drivers
Description: IC: driver; LED driver; SO8; 10mA; Ch: 1; PWM,linear dimming; 90%
Type of integrated circuit: driver
Kind of integrated circuit: LED driver
Case: SO8
Number of channels: 1
Integrated circuit features: linear dimming; PWM
Mounting: SMD
Operating temperature: -40...105°C
Operating voltage: 20...500V DC
Kind of package: reel; tape
Efficiency: 90%
Output current: 10mA
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AL9910-5S-13 AL9910-5S-13 DIODES INCORPORATED AL9910_A.pdf Category: LED drivers
Description: IC: driver; LED driver; SO8; Ch: 1; PWM,linear dimming; 7.5VDC; 90%
Type of integrated circuit: driver
Kind of integrated circuit: LED driver
Case: SO8
Number of channels: 1
Integrated circuit features: linear dimming; PWM
Mounting: SMD
Operating temperature: -40...105°C
Operating voltage: 7.5V DC
Kind of package: reel; tape
Efficiency: 90%
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AL9910S-13 AL9910S-13 DIODES INCORPORATED AL9910_A.pdf Category: LED drivers
Description: IC: driver; LED driver; SO8; Ch: 1; PWM,linear dimming; 15÷500VDC
Type of integrated circuit: driver
Kind of integrated circuit: LED driver
Case: SO8
Number of channels: 1
Integrated circuit features: linear dimming; PWM
Mounting: SMD
Operating temperature: -40...105°C
Operating voltage: 15...500V DC
Kind of package: reel; tape
Efficiency: 90%
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FZT649TC FZT649TC DIODES INCORPORATED FZT649.pdf Category: NPN SMD transistors
Description: Transistor: NPN; bipolar; 25V; 3A; 2W; SOT223
Type of transistor: NPN
Polarisation: bipolar
Collector-emitter voltage: 25V
Collector current: 3A
Power dissipation: 2W
Case: SOT223
Pulsed collector current: 8A
Mounting: SMD
Frequency: 240MHz
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D5V0M5B6LP16-7 D5V0M5B6LP16-7 DIODES INCORPORATED D5V0M5B6LP16.pdf Category: Protection diodes - arrays
Description: Diode: TVS array; 5.5V; 12A; bidirectional; U-DFN1616-6; Ch: 5
Mounting: SMD
Breakdown voltage: 5.5V
Max. forward impulse current: 12A
Max. off-state voltage: 5V
Kind of package: reel; tape
Semiconductor structure: bidirectional
Leakage current: 0.1µA
Case: U-DFN1616-6
Capacitance: 40pF
Type of diode: TVS array
Number of channels: 5
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D26V0H1U2LP16-7 DIODES INCORPORATED D26V0H1U2LP16.pdf Category: Unidirectional TVS SMD diodes
Description: Diode: TVS; 28V; 50A; unidirectional; U-DFN1616-2; reel,tape
Mounting: SMD
Breakdown voltage: 28V
Max. forward impulse current: 50A
Max. off-state voltage: 26V
Kind of package: reel; tape
Semiconductor structure: unidirectional
Leakage current: 0.1µA
Case: U-DFN1616-2
Type of diode: TVS
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AP7343D-20FS4-7B DIODES INCORPORATED AP7343.pdf Category: LDO fixed voltage regulators
Description: IC: voltage regulator; LDO,linear,fixed; 2V; 0.3A; X2DFN4; SMD
Manufacturer series: AP7343
Output current: 0.3A
Mounting: SMD
Operating temperature: -40...85°C
Output voltage: 2V
Kind of package: reel; tape
Case: X2DFN4
Number of channels: 1
Tolerance: ±1%
Kind of voltage regulator: fixed; LDO; linear
Input voltage: 1.7...5.25V
Type of integrated circuit: voltage regulator
Voltage drop: 0.39V
Integrated circuit features: output discharge; shutdown mode control input
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SMCJ10CA-13-F SMCJ10CA-13-F DIODES INCORPORATED SMCJ_ser.pdf Category: Bidirectional TVS SMD diodes
Description: Diode: TVS; 1.5kW; 11.1÷12.3V; 88.2A; bidirectional; SMC; reel,tape
Type of diode: TVS
Peak pulse power dissipation: 1.5kW
Max. off-state voltage: 10V
Breakdown voltage: 11.1...12.3V
Max. forward impulse current: 88.2A
Semiconductor structure: bidirectional
Case: SMC
Mounting: SMD
Leakage current: 10µA
Features of semiconductor devices: glass passivated
Kind of package: reel; tape
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BZX84C2V4Q-7-F BZX84C2V4Q-7-F DIODES INCORPORATED BZX84Cxx_SER.pdf Category: SMD Zener diodes
Description: Diode: Zener; 0.35W; 2.4V; SMD; SOT23; single diode; reel,tape
Type of diode: Zener
Power dissipation: 0.35W
Zener voltage: 2.4V
Mounting: SMD
Tolerance: ±8%
Case: SOT23
Semiconductor structure: single diode
Kind of package: reel; tape
Application: automotive industry
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BZX84C2V4T-7-F BZX84C2V4T-7-F DIODES INCORPORATED BZX84CxxT_SER.pdf Category: SMD Zener diodes
Description: Diode: Zener; 0.15W; 2.4V; SMD; SOT523; single diode; reel,tape
Type of diode: Zener
Power dissipation: 0.15W
Zener voltage: 2.4V
Mounting: SMD
Tolerance: ±8.5%
Case: SOT523
Semiconductor structure: single diode
Kind of package: reel; tape
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BZX84C2V4TS-7-F BZX84C2V4TS-7-F DIODES INCORPORATED BZX84CxxTS_SER.pdf Category: SMD Zener diodes
Description: Diode: Zener; 0.2W; 2.4V; SMD; SOT363; triple independent
Type of diode: Zener
Power dissipation: 0.2W
Zener voltage: 2.4V
Mounting: SMD
Tolerance: ±8.5%
Case: SOT363
Semiconductor structure: triple independent
Kind of package: reel; tape
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BZX84C2V4W-7-F BZX84C2V4W-7-F DIODES INCORPORATED BZX84CxxW_SER.pdf Category: SMD Zener diodes
Description: Diode: Zener; 0.2W; 2.4V; SMD; SOT323; single diode; reel,tape
Type of diode: Zener
Power dissipation: 0.2W
Zener voltage: 2.4V
Mounting: SMD
Tolerance: ±8.5%
Case: SOT323
Semiconductor structure: single diode
Kind of package: reel; tape
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ZXMN10A07ZTA ZXMN10A07ZTA DIODES INCORPORATED ZXMN10A07Z.pdf Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 100V; 1.1A; 1.5W; SOT89
Type of transistor: N-MOSFET
Polarisation: unipolar
Case: SOT89
Mounting: SMD
Kind of package: reel; tape
Power dissipation: 1.5W
Drain current: 1.1A
Kind of channel: enhancement
Drain-source voltage: 100V
Gate-source voltage: ±20V
On-state resistance: 0.9Ω
на замовлення 1656 шт:
термін постачання 14-30 дні (днів)
8+62.50 грн
15+29.60 грн
50+25.04 грн
100+23.13 грн
250+20.65 грн
500+18.74 грн
1000+16.91 грн
Мінімальне замовлення: 8 шт
В кошику  од. на суму  грн.
FCX1051ATA FCX1051ATA DIODES INCORPORATED FCX1051A.pdf Category: NPN SMD transistors
Description: Transistor: NPN; bipolar; 40V; 3A; 2W; SOT89
Type of transistor: NPN
Polarisation: bipolar
Collector-emitter voltage: 40V
Collector current: 3A
Case: SOT89
Current gain: 40...1200
Mounting: SMD
Kind of package: reel; tape
Frequency: 155MHz
Manufacturer standard package: 1000pcs.
Power dissipation: 2W
Pulsed collector current: 10A
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BCX5510TA BCX5510TA DIODES INCORPORATED BCX54x-DTE.pdf Category: NPN SMD transistors
Description: Transistor: NPN; bipolar; 60V; 1A; 1W; SOT89
Type of transistor: NPN
Polarisation: bipolar
Collector-emitter voltage: 60V
Collector current: 1A
Power dissipation: 1W
Case: SOT89
Mounting: SMD
Frequency: 150MHz
Kind of package: reel; tape
Manufacturer standard package: 1000pcs.
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AP7365-10YG-13 AP7365-10YG-13 DIODES INCORPORATED AP7365.pdf Category: LDO fixed voltage regulators
Description: IC: voltage regulator; LDO,linear,fixed; 1V; 0.6A; SOT89; SMD; ±2%
Case: SOT89
Mounting: SMD
Kind of package: reel; tape
Output current: 0.6A
Type of integrated circuit: voltage regulator
Voltage drop: 0.6V
Operating temperature: -40...85°C
Output voltage: 1V
Number of channels: 1
Tolerance: ±2%
Kind of voltage regulator: fixed; LDO; linear
Manufacturer series: AP7365
Input voltage: 2...6V
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ZXTP19100CZTA ZXTP19100CZTA DIODES INCORPORATED ZXTP19100CZ.pdf Category: PNP SMD transistors
Description: Transistor: PNP; bipolar; 100V; 2A; 4.46W; SOT89
Type of transistor: PNP
Polarisation: bipolar
Collector-emitter voltage: 100V
Collector current: 2A
Case: SOT89
Current gain: 20...500
Mounting: SMD
Kind of package: reel; tape
Frequency: 142MHz
Manufacturer standard package: 1000pcs.
Power dissipation: 4.46W
Pulsed collector current: 3A
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1N4934-T 1N4934-T DIODES INCORPORATED 1N4934_37.pdf Category: THT universal diodes
Description: Diode: rectifying; THT; 100V; 1A; Ifsm: 30A; DO41; reel,tape; 200ns
Type of diode: rectifying
Mounting: THT
Max. off-state voltage: 0.1kV
Load current: 1A
Semiconductor structure: single diode
Capacitance: 15pF
Max. forward impulse current: 30A
Case: DO41
Kind of package: reel; tape
Max. forward voltage: 1.2V
Reverse recovery time: 200ns
на замовлення 490 шт:
термін постачання 14-30 дні (днів)
63+7.14 грн
74+5.64 грн
82+5.06 грн
115+3.61 грн
Мінімальне замовлення: 63 шт
В кошику  од. на суму  грн.
DDZ33ASF-7 DDZ33ASF-7 DIODES INCORPORATED ds31987.pdf Category: SMD Zener diodes
Description: Diode: Zener; 0.5W; 33V; SMD; SOD323F; single diode; reel,tape
Power dissipation: 0.5W
Kind of package: reel; tape
Semiconductor structure: single diode
Case: SOD323F
Zener voltage: 33V
Type of diode: Zener
Mounting: SMD
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BZT52C18LP-7 DIODES INCORPORATED BZT52CxxLP_ser.pdf Category: SMD Zener diodes
Description: Diode: Zener; 0.25W; 18V; SMD; X1-DFN1006-2; single diode
Type of diode: Zener
Power dissipation: 0.25W
Zener voltage: 18V
Mounting: SMD
Tolerance: ±6.5%
Case: X1-DFN1006-2
Semiconductor structure: single diode
Kind of package: reel; tape
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BZT52C18Q-7-F BZT52C18Q-7-F DIODES INCORPORATED BZT52Cxx_ser.pdf Category: SMD Zener diodes
Description: Diode: Zener; 0.37W; 18V; SMD; SOD123; single diode; reel,tape
Type of diode: Zener
Power dissipation: 0.37W
Zener voltage: 18V
Mounting: SMD
Tolerance: ±6.5%
Case: SOD123
Semiconductor structure: single diode
Kind of package: reel; tape
Application: automotive industry
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GBU1002 GBU1002 DIODES INCORPORATED GBU10_ser.pdf Category: Flat single phase diode bridge rectif.
Description: Bridge rectifier: single-phase; Urmax: 200V; If: 10A; Ifsm: 220A
Type of bridge rectifier: single-phase
Max. off-state voltage: 200V
Load current: 10A
Max. forward impulse current: 220A
Version: flat
Case: GBU
Electrical mounting: THT
Leads: flat pin
Kind of package: tube
Features of semiconductor devices: glass passivated
на замовлення 22 шт:
термін постачання 14-30 дні (днів)
4+131.26 грн
10+76.28 грн
20+71.30 грн
Мінімальне замовлення: 4 шт
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GBU1001 GBU1001 DIODES INCORPORATED GBU10_ser.pdf Category: Flat single phase diode bridge rectif.
Description: Bridge rectifier: single-phase; Urmax: 100V; If: 10A; Ifsm: 220A
Type of bridge rectifier: single-phase
Max. off-state voltage: 0.1kV
Load current: 10A
Max. forward impulse current: 220A
Version: flat
Case: GBU
Electrical mounting: THT
Leads: flat pin
Kind of package: tube
Features of semiconductor devices: glass passivated
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GBU1008 GBU1008 DIODES INCORPORATED GBU10_ser.pdf Category: Flat single phase diode bridge rectif.
Description: Bridge rectifier: single-phase; Urmax: 800V; If: 10A; Ifsm: 220A
Type of bridge rectifier: single-phase
Max. off-state voltage: 0.8kV
Load current: 10A
Max. forward impulse current: 220A
Version: flat
Case: GBU
Electrical mounting: THT
Leads: flat pin
Kind of package: tube
Features of semiconductor devices: glass passivated
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GBU10005 GBU10005 DIODES INCORPORATED GBU10_ser.pdf Category: Flat single phase diode bridge rectif.
Description: Bridge rectifier: single-phase; Urmax: 50V; If: 10A; Ifsm: 220A
Type of bridge rectifier: single-phase
Max. off-state voltage: 50V
Load current: 10A
Max. forward impulse current: 220A
Version: flat
Case: GBU
Electrical mounting: THT
Leads: flat pin
Kind of package: tube
Features of semiconductor devices: glass passivated
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GBU1004 GBU1004 DIODES INCORPORATED GBU10_ser.pdf Category: Flat single phase diode bridge rectif.
Description: Bridge rectifier: single-phase; Urmax: 400V; If: 10A; Ifsm: 220A
Type of bridge rectifier: single-phase
Max. off-state voltage: 0.4kV
Load current: 10A
Max. forward impulse current: 220A
Version: flat
Case: GBU
Electrical mounting: THT
Leads: flat pin
Kind of package: tube
Features of semiconductor devices: glass passivated
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AL17050WT-7 AL17050WT-7 DIODES INCORPORATED AL17050info.pdf AL17050.pdf Category: Voltage regulators - DC/DC circuits
Description: PMIC; DC/DC converter; Uin: 20÷400VDC; Uout: 3.4÷20VDC; 0.06A; SMD
Mounting: SMD
Input voltage: 20...400V DC
Output current: 60mA
Type of integrated circuit: PMIC
Operating temperature: -40...105°C
Efficiency: 50%
Output voltage: 3.4...20V DC
Kind of package: reel; tape
Case: TSOT25
Kind of integrated circuit: DC/DC converter
Frequency: 70kHz
Topology: buck
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ZTX551STZ ZTX550.pdf
ZTX551STZ
Виробник: DIODES INCORPORATED
Category: PNP THT transistors
Description: Transistor: PNP; bipolar; 60V; 1A; 1W; TO92
Type of transistor: PNP
Polarisation: bipolar
Collector-emitter voltage: 60V
Collector current: 1A
Power dissipation: 1W
Case: TO92
Mounting: THT
Kind of package: Ammo Pack
Frequency: 150MHz
Manufacturer standard package: 2000pcs.
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SMAJ60AQ-13-F SMAJ5.0CAQ-SMAJ200CAQ.pdf
SMAJ60AQ-13-F
Виробник: DIODES INCORPORATED
Category: Unidirectional TVS SMD diodes
Description: Diode: TVS; 0.4kW; 66.7÷73.7V; 4.1A; unidirectional; SMA; reel,tape
Type of diode: TVS
Peak pulse power dissipation: 0.4kW
Max. off-state voltage: 60V
Breakdown voltage: 66.7...73.7V
Max. forward impulse current: 4.1A
Semiconductor structure: unidirectional
Case: SMA
Mounting: SMD
Leakage current: 5µA
Features of semiconductor devices: glass passivated
Kind of package: reel; tape
Application: automotive industry
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P4SMAJ60ADF-13 P4SMAJ50ADF_P4SMAJ85ADF.pdf
Виробник: DIODES INCORPORATED
Category: Unidirectional TVS SMD diodes
Description: Diode: TVS; 0.4kW; 66.7÷73.7V; 4.1A; unidirectional; D-FLAT
Type of diode: TVS
Peak pulse power dissipation: 0.4kW
Max. off-state voltage: 60V
Breakdown voltage: 66.7...73.7V
Max. forward impulse current: 4.1A
Semiconductor structure: unidirectional
Case: D-FLAT
Mounting: SMD
Leakage current: 1µA
Features of semiconductor devices: glass passivated
Kind of package: reel; tape
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SBR3045CTB-13 SBR3045CTB.pdf
SBR3045CTB-13
Виробник: DIODES INCORPORATED
Category: SMD universal diodes
Description: Diode: rectifying; SMD; 45V; 15Ax2; D2PAK; Ufmax: 700mV; SBR®
Type of diode: rectifying
Mounting: SMD
Max. off-state voltage: 45V
Load current: 15A x2
Semiconductor structure: common cathode; double
Case: D2PAK
Max. forward voltage: 0.7V
Kind of package: reel; tape
Technology: SBR®
Max. load current: 30A
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SMAJ51AQ-13-F SMAJ5.0CAQ-SMAJ200CAQ.pdf
SMAJ51AQ-13-F
Виробник: DIODES INCORPORATED
Category: Unidirectional TVS SMD diodes
Description: Diode: TVS; 0.4kW; 56.7÷62.7V; 4.9A; unidirectional; SMA; reel,tape
Type of diode: TVS
Peak pulse power dissipation: 0.4kW
Max. off-state voltage: 51V
Breakdown voltage: 56.7...62.7V
Max. forward impulse current: 4.9A
Semiconductor structure: unidirectional
Case: SMA
Mounting: SMD
Leakage current: 5µA
Features of semiconductor devices: glass passivated
Kind of package: reel; tape
Application: automotive industry
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SMCJ22A-13-F SMCJ_ser.pdf
SMCJ22A-13-F
Виробник: DIODES INCORPORATED
Category: Unidirectional TVS SMD diodes
Description: Diode: TVS; 1.5kW; 24.4÷27V; 42.2A; unidirectional; SMC; reel,tape
Type of diode: TVS
Peak pulse power dissipation: 1.5kW
Max. off-state voltage: 22V
Breakdown voltage: 24.4...27V
Max. forward impulse current: 42.2A
Semiconductor structure: unidirectional
Case: SMC
Mounting: SMD
Leakage current: 5µA
Features of semiconductor devices: glass passivated
Kind of package: reel; tape
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SMCJ22AQ-13-F SMCJ5.0CAQ_SMCJ110CAQ.pdf
Виробник: DIODES INCORPORATED
Category: Unidirectional TVS SMD diodes
Description: Diode: TVS; 1.5kW; 24.4÷27V; 42.2A; unidirectional; SMC; reel,tape
Type of diode: TVS
Peak pulse power dissipation: 1.5kW
Max. off-state voltage: 22V
Breakdown voltage: 24.4...27V
Max. forward impulse current: 42.2A
Semiconductor structure: unidirectional
Case: SMC
Mounting: SMD
Leakage current: 5µA
Features of semiconductor devices: glass passivated
Application: automotive industry
Kind of package: reel; tape
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3.0SMCJ22A-13 3.0SMCJxx.pdf
Виробник: DIODES INCORPORATED
Category: Unidirectional TVS SMD diodes
Description: Diode: TVS; 3kW; 24.4÷27V; 84.5A; unidirectional; SMC; reel,tape
Type of diode: TVS
Peak pulse power dissipation: 3kW
Max. off-state voltage: 22V
Breakdown voltage: 24.4...27V
Max. forward impulse current: 84.5A
Semiconductor structure: unidirectional
Case: SMC
Mounting: SMD
Leakage current: 5µA
Features of semiconductor devices: glass passivated
Kind of package: reel; tape
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Мінімальне замовлення: 3000 шт
В кошику  од. на суму  грн.
DMN1001UCA10-7 DMN1001UCA10.pdf
Виробник: DIODES INCORPORATED
Category: Multi channel transistors
Description: Transistor: N-MOSFET x2; unipolar; 12V; 16A; Idm: 90A; 2.4W
Mounting: SMD
Pulsed drain current: 90A
Power dissipation: 2.4W
Gate charge: 29nC
Polarisation: unipolar
Drain current: 16A
Kind of channel: enhancement
Drain-source voltage: 12V
Type of transistor: N-MOSFET x2
Gate-source voltage: ±8V
Kind of package: 7 inch reel; tape
Case: X2-TSN1820-10
On-state resistance: 6.9mΩ
товару немає в наявності
Мінімальне замовлення: 3000 шт
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ZLLS1000TA ZLLS1000.pdf
ZLLS1000TA
Виробник: DIODES INCORPORATED
Category: SMD Schottky diodes
Description: Diode: Schottky rectifying; SOT23; SMD; 40V; 1.16A; reel,tape
Type of diode: Schottky rectifying
Case: SOT23
Mounting: SMD
Max. off-state voltage: 40V
Load current: 1.16A
Semiconductor structure: single diode
Capacitance: 28pF
Max. forward voltage: 0.56V
Max. forward impulse current: 6.4A
Kind of package: reel; tape
Power dissipation: 0.8W
на замовлення 448 шт:
термін постачання 14-30 дні (днів)
КількістьЦіна без ПДВ
10+48.22 грн
13+33.08 грн
100+20.48 грн
150+18.82 грн
300+16.25 грн
Мінімальне замовлення: 10 шт
В кошику  од. на суму  грн.
AL5809-50S1-7 AL5809-DTE.pdf
AL5809-50S1-7
Виробник: DIODES INCORPORATED
Category: LED drivers
Description: IC: driver; current regulator,LED driver; SOD123; 50mA; Ch: 1
Type of integrated circuit: driver
Kind of integrated circuit: current regulator; LED driver
Case: SOD123
Output current: 50mA
Number of channels: 1
Integrated circuit features: linear dimming; PWM
Mounting: SMD
Operating temperature: -40...125°C
Operating voltage: 2.5...60V DC
Kind of package: reel; tape
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AL5809-50QP1-7 AL5809Q.pdf
AL5809-50QP1-7
Виробник: DIODES INCORPORATED
Category: LED drivers
Description: IC: driver; current regulator,LED driver; PowerDI®123; 50mA; Ch: 1
Type of integrated circuit: driver
Kind of integrated circuit: current regulator; LED driver
Case: PowerDI®123
Output current: 50mA
Number of channels: 1
Integrated circuit features: linear dimming; PWM
Mounting: SMD
Operating temperature: -40...105°C
Operating voltage: 2.5...60V DC
Kind of package: reel; tape
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SDT10A45P5-7 SDT10A45P5.pdf
Виробник: DIODES INCORPORATED
Category: SMD Schottky diodes
Description: Diode: Schottky rectifying; PowerDI®5; SMD; 45V; 10A; reel,tape
Type of diode: Schottky rectifying
Max. off-state voltage: 45V
Max. forward impulse current: 180A
Semiconductor structure: single diode
Case: PowerDI®5
Mounting: SMD
Leakage current: 80mA
Kind of package: reel; tape
Max. forward voltage: 0.47V
Load current: 10A
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SDT10A45P5-13 SDT10A45P5.pdf
Виробник: DIODES INCORPORATED
Category: SMD Schottky diodes
Description: Diode: Schottky rectifying; PowerDI®5; SMD; 45V; 10A; reel,tape
Type of diode: Schottky rectifying
Max. off-state voltage: 45V
Max. forward impulse current: 180A
Semiconductor structure: single diode
Case: PowerDI®5
Mounting: SMD
Leakage current: 80mA
Kind of package: reel; tape
Max. forward voltage: 0.47V
Load current: 10A
товару немає в наявності
Мінімальне замовлення: 5000 шт
В кошику  од. на суму  грн.
SDT10A100P5-13 SDT10A100P5.pdf
Виробник: DIODES INCORPORATED
Category: SMD Schottky diodes
Description: Diode: Schottky rectifying; PowerDI®5; SMD; 100V; 10A; reel,tape
Type of diode: Schottky rectifying
Max. off-state voltage: 0.1kV
Max. forward impulse current: 0.24kA
Semiconductor structure: single diode
Case: PowerDI®5
Mounting: SMD
Leakage current: 20mA
Kind of package: reel; tape
Max. forward voltage: 0.68V
Load current: 10A
товару немає в наявності
Мінімальне замовлення: 5000 шт
В кошику  од. на суму  грн.
SMCJ13A-13-F SMCJ_ser.pdf
SMCJ13A-13-F
Виробник: DIODES INCORPORATED
Category: Unidirectional TVS SMD diodes
Description: Diode: TVS; 1.5kW; 14.4÷15.9V; 69.7A; unidirectional; SMC
Type of diode: TVS
Peak pulse power dissipation: 1.5kW
Max. off-state voltage: 13V
Breakdown voltage: 14.4...15.9V
Max. forward impulse current: 69.7A
Semiconductor structure: unidirectional
Case: SMC
Mounting: SMD
Leakage current: 5µA
Features of semiconductor devices: glass passivated
Kind of package: reel; tape
товару немає в наявності
Мінімальне замовлення: 3000 шт
В кошику  од. на суму  грн.
DMN3065LW-7 DMN3065LW.pdf
DMN3065LW-7
Виробник: DIODES INCORPORATED
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 30V; 4A; 0.77W; SOT323
Polarisation: unipolar
Mounting: SMD
Power dissipation: 0.77W
Drain current: 4A
Kind of channel: enhancement
Drain-source voltage: 30V
Type of transistor: N-MOSFET
Gate-source voltage: ±12V
Kind of package: 7 inch reel; tape
Case: SOT323
On-state resistance: 85mΩ
на замовлення 1748 шт:
термін постачання 14-30 дні (днів)
КількістьЦіна без ПДВ
15+31.25 грн
20+20.89 грн
50+14.18 грн
100+11.94 грн
500+8.46 грн
1000+7.54 грн
Мінімальне замовлення: 15 шт
В кошику  од. на суму  грн.
2DB1386Q-13 ds31147.pdf
2DB1386Q-13
Виробник: DIODES INCORPORATED
Category: PNP SMD transistors
Description: Transistor: PNP; bipolar; 20V; 5A; 1W; SOT89; automotive industry
Frequency: 100MHz
Polarisation: bipolar
Pulsed collector current: 10A
Application: automotive industry
Type of transistor: PNP
Current gain: 120...270
Kind of package: reel; tape
Case: SOT89
Collector current: 5A
Mounting: SMD
Manufacturer standard package: 2500pcs.
Collector-emitter voltage: 20V
Power dissipation: 1W
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2DB1386R-13 ds31147.pdf
2DB1386R-13
Виробник: DIODES INCORPORATED
Category: PNP SMD transistors
Description: Transistor: PNP; bipolar; 20V; 5A; 1W; SOT89
Frequency: 100MHz
Polarisation: bipolar
Pulsed collector current: 10A
Type of transistor: PNP
Current gain: 180...390
Kind of package: reel; tape
Case: SOT89
Collector current: 5A
Mounting: SMD
Manufacturer standard package: 2500pcs.
Collector-emitter voltage: 20V
Power dissipation: 1W
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SMBJ60A-13-F ds19002.pdf
SMBJ60A-13-F
Виробник: DIODES INCORPORATED
Category: Unidirectional TVS SMD diodes
Description: Diode: TVS; 0.6kW; 66.7÷76.7V; 6.2A; unidirectional; SMB; reel,tape
Type of diode: TVS
Peak pulse power dissipation: 0.6kW
Max. off-state voltage: 60V
Breakdown voltage: 66.7...76.7V
Max. forward impulse current: 6.2A
Semiconductor structure: unidirectional
Case: SMB
Mounting: SMD
Leakage current: 5µA
Features of semiconductor devices: glass passivated
Kind of package: reel; tape
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SMCJ160CA-13-F SMCJ_ser.pdf
SMCJ160CA-13-F
Виробник: DIODES INCORPORATED
Category: Bidirectional TVS SMD diodes
Description: Diode: TVS; 1.5kW; 178÷197V; 5.8A; bidirectional; SMC; reel,tape
Type of diode: TVS
Peak pulse power dissipation: 1.5kW
Max. off-state voltage: 160V
Breakdown voltage: 178...197V
Max. forward impulse current: 5.8A
Semiconductor structure: bidirectional
Case: SMC
Mounting: SMD
Leakage current: 5µA
Features of semiconductor devices: glass passivated
Kind of package: reel; tape
товару немає в наявності
Мінімальне замовлення: 3 шт
В кошику  од. на суму  грн.
SMBJ78A-13-F SMBJ_ser.pdf
SMBJ78A-13-F
Виробник: DIODES INCORPORATED
Category: Unidirectional TVS SMD diodes
Description: Diode: TVS; 0.6kW; 86.7÷99.7V; 4.7A; unidirectional; SMB; reel,tape
Type of diode: TVS
Peak pulse power dissipation: 0.6kW
Max. off-state voltage: 78V
Breakdown voltage: 86.7...99.7V
Max. forward impulse current: 4.7A
Semiconductor structure: unidirectional
Case: SMB
Mounting: SMD
Leakage current: 5µA
Features of semiconductor devices: glass passivated
Kind of package: reel; tape
товару немає в наявності
Мінімальне замовлення: 3000 шт
В кошику  од. на суму  грн.
BZX84B5V6-7-F BZX84Bxxx.pdf
BZX84B5V6-7-F
Виробник: DIODES INCORPORATED
Category: SMD Zener diodes
Description: Diode: Zener; 0.35W; 5.6V; SMD; SOT23; single diode; reel,tape
Type of diode: Zener
Power dissipation: 0.35W
Zener voltage: 5.6V
Mounting: SMD
Tolerance: ±2%
Case: SOT23
Semiconductor structure: single diode
Kind of package: reel; tape
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В кошику  од. на суму  грн.
MMBD914-7-F BAS16-7-DTE.pdf
MMBD914-7-F
Виробник: DIODES INCORPORATED
Category: SMD universal diodes
Description: Diode: switching; SMD; 75V; 0.2A; 4ns; SOT23; Ufmax: 1.25V; Ifsm: 2A
Reverse recovery time: 4ns
Mounting: SMD
Max. forward impulse current: 2A
Max. forward voltage: 1.25V
Features of semiconductor devices: small signal
Max. off-state voltage: 75V
Load current: 0.2A
Max. load current: 0.3A
Kind of package: reel; tape
Semiconductor structure: single diode
Case: SOT23
Capacitance: 2pF
Type of diode: switching
на замовлення 3592 шт:
термін постачання 14-30 дні (днів)
КількістьЦіна без ПДВ
50+8.93 грн
117+3.57 грн
159+2.62 грн
184+2.26 грн
500+1.57 грн
1000+1.36 грн
2000+1.22 грн
3000+1.15 грн
Мінімальне замовлення: 50 шт
В кошику  од. на суму  грн.
SMBJ6.5A-13-F SMBJ_ser.pdf
SMBJ6.5A-13-F
Виробник: DIODES INCORPORATED
Category: Unidirectional TVS SMD diodes
Description: Diode: TVS; 0.6kW; 7.22÷8.3V; 53.6A; unidirectional; SMB; reel,tape
Type of diode: TVS
Peak pulse power dissipation: 0.6kW
Max. off-state voltage: 6.5V
Breakdown voltage: 7.22...8.3V
Max. forward impulse current: 53.6A
Semiconductor structure: unidirectional
Case: SMB
Mounting: SMD
Leakage current: 0.5mA
Kind of package: reel; tape
Features of semiconductor devices: glass passivated
на замовлення 3565 шт:
термін постачання 14-30 дні (днів)
КількістьЦіна без ПДВ
32+14.29 грн
35+11.94 грн
100+9.78 грн
500+6.88 грн
1000+6.14 грн
3000+5.80 грн
Мінімальне замовлення: 32 шт
В кошику  од. на суму  грн.
SMCJ28CA-13-F SMCJ_ser.pdf
SMCJ28CA-13-F
Виробник: DIODES INCORPORATED
Category: Bidirectional TVS SMD diodes
Description: Diode: TVS; 1.5kW; 31.1÷34.4V; 33A; bidirectional; SMC; reel,tape
Type of diode: TVS
Peak pulse power dissipation: 1.5kW
Max. off-state voltage: 28V
Breakdown voltage: 31.1...34.4V
Max. forward impulse current: 33A
Semiconductor structure: bidirectional
Case: SMC
Mounting: SMD
Leakage current: 5µA
Kind of package: reel; tape
Features of semiconductor devices: glass passivated
на замовлення 2479 шт:
термін постачання 14-30 дні (днів)
КількістьЦіна без ПДВ
10+44.64 грн
16+27.11 грн
100+19.98 грн
500+17.08 грн
1000+15.42 грн
Мінімальне замовлення: 10 шт
В кошику  од. на суму  грн.
FMMT618TA FMMT618.pdf
FMMT618TA
Виробник: DIODES INCORPORATED
Category: NPN SMD transistors
Description: Transistor: NPN; bipolar; 20V; 2.5A; 806mW; SOT23
Type of transistor: NPN
Polarisation: bipolar
Collector-emitter voltage: 20V
Collector current: 2.5A
Power dissipation: 0.806W
Case: SOT23
Pulsed collector current: 6A
Current gain: 100...450
Mounting: SMD
Kind of package: reel; tape
Frequency: 100...140MHz
Manufacturer standard package: 3000pcs.
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FMMT618TA FMMT618.pdf
FMMT618TA
Виробник: DIODES INCORPORATED
Category: NPN SMD transistors
Description: Transistor: NPN; bipolar; 20V; 2.5A; 806mW; SOT23
Type of transistor: NPN
Polarisation: bipolar
Collector-emitter voltage: 20V
Collector current: 2.5A
Power dissipation: 0.806W
Case: SOT23
Pulsed collector current: 6A
Mounting: SMD
Kind of package: reel; tape
Frequency: 140MHz
Quantity in set/package: 3000pcs.
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SMAZ5V6-13-F SMAZx-13-F.pdf
SMAZ5V6-13-F
Виробник: DIODES INCORPORATED
Category: SMD Zener diodes
Description: Diode: Zener; 1W; 5.6V; SMD; SMA; single diode; reel,tape
Type of diode: Zener
Power dissipation: 1W
Zener voltage: 5.6V
Mounting: SMD
Tolerance: ±5%
Case: SMA
Semiconductor structure: single diode
Kind of package: reel; tape
на замовлення 4502 шт:
термін постачання 14-30 дні (днів)
КількістьЦіна без ПДВ
14+32.14 грн
21+20.06 грн
25+16.67 грн
100+9.95 грн
500+7.79 грн
1000+7.05 грн
2000+6.47 грн
Мінімальне замовлення: 14 шт
В кошику  од. на суму  грн.
DFLZ5V6-7 DFLZ-ser.pdf
DFLZ5V6-7
Виробник: DIODES INCORPORATED
Category: SMD Zener diodes
Description: Diode: Zener; 1W; 5.6V; SMD; PowerDI®123; single diode; reel,tape
Type of diode: Zener
Power dissipation: 1W
Zener voltage: 5.6V
Mounting: SMD
Tolerance: ±5%
Case: PowerDI®123
Semiconductor structure: single diode
Kind of package: reel; tape
товару немає в наявності
Мінімальне замовлення: 3000 шт
В кошику  од. на суму  грн.
2DD2652-7 2DD2652.pdf
2DD2652-7
Виробник: DIODES INCORPORATED
Category: NPN SMD transistors
Description: Transistor: NPN; bipolar; 12V; 1.5A; 300mW; SOT323
Polarisation: bipolar
Pulsed collector current: 3A
Type of transistor: NPN
Current gain: 270...680
Kind of package: reel; tape
Case: SOT323
Frequency: 260MHz
Collector current: 1.5A
Mounting: SMD
Manufacturer standard package: 3000pcs.
Collector-emitter voltage: 12V
Power dissipation: 0.3W
на замовлення 1720 шт:
термін постачання 14-30 дні (днів)
КількістьЦіна без ПДВ
36+12.50 грн
56+7.46 грн
100+4.96 грн
500+3.91 грн
1000+3.57 грн
Мінімальне замовлення: 36 шт
В кошику  од. на суму  грн.
DLP05LC-7-F ds30283.pdf
DLP05LC-7-F
Виробник: DIODES INCORPORATED
Category: Unidirectional TVS SMD diodes
Description: Diode: TVS; 300W; 6V; 17A; unidirectional; SOT23; Ch: 1; reel,tape
Type of diode: TVS
Peak pulse power dissipation: 0.3kW
Max. off-state voltage: 5V
Breakdown voltage: 6V
Max. forward impulse current: 17A
Semiconductor structure: unidirectional
Case: SOT23
Mounting: SMD
Leakage current: 20µA
Number of channels: 1
Kind of package: reel; tape
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P4SMAJ6.0ADF-13 P4SMAJ50ADF_P4SMAJ85ADF.pdf
Виробник: DIODES INCORPORATED
Category: Unidirectional TVS SMD diodes
Description: Diode: TVS; 0.4kW; 6.67÷7.37V; 38.8A; unidirectional; D-FLAT
Type of diode: TVS
Peak pulse power dissipation: 0.4kW
Max. off-state voltage: 6V
Breakdown voltage: 6.67...7.37V
Max. forward impulse current: 38.8A
Semiconductor structure: unidirectional
Case: D-FLAT
Mounting: SMD
Leakage current: 0.4mA
Features of semiconductor devices: glass passivated
Kind of package: reel; tape
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AL9910A-5S-13 AL9910_A.pdf
AL9910A-5S-13
Виробник: DIODES INCORPORATED
Category: LED drivers
Description: IC: driver; LED driver; SO8; 10mA; Ch: 1; PWM,linear dimming; 90%
Type of integrated circuit: driver
Kind of integrated circuit: LED driver
Case: SO8
Number of channels: 1
Integrated circuit features: linear dimming; PWM
Mounting: SMD
Operating temperature: -40...105°C
Operating voltage: 20...500V DC
Kind of package: reel; tape
Efficiency: 90%
Output current: 10mA
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AL9910-5S-13 AL9910_A.pdf
AL9910-5S-13
Виробник: DIODES INCORPORATED
Category: LED drivers
Description: IC: driver; LED driver; SO8; Ch: 1; PWM,linear dimming; 7.5VDC; 90%
Type of integrated circuit: driver
Kind of integrated circuit: LED driver
Case: SO8
Number of channels: 1
Integrated circuit features: linear dimming; PWM
Mounting: SMD
Operating temperature: -40...105°C
Operating voltage: 7.5V DC
Kind of package: reel; tape
Efficiency: 90%
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AL9910S-13 AL9910_A.pdf
AL9910S-13
Виробник: DIODES INCORPORATED
Category: LED drivers
Description: IC: driver; LED driver; SO8; Ch: 1; PWM,linear dimming; 15÷500VDC
Type of integrated circuit: driver
Kind of integrated circuit: LED driver
Case: SO8
Number of channels: 1
Integrated circuit features: linear dimming; PWM
Mounting: SMD
Operating temperature: -40...105°C
Operating voltage: 15...500V DC
Kind of package: reel; tape
Efficiency: 90%
товару немає в наявності
Мінімальне замовлення: 2500 шт
В кошику  од. на суму  грн.
FZT649TC FZT649.pdf
FZT649TC
Виробник: DIODES INCORPORATED
Category: NPN SMD transistors
Description: Transistor: NPN; bipolar; 25V; 3A; 2W; SOT223
Type of transistor: NPN
Polarisation: bipolar
Collector-emitter voltage: 25V
Collector current: 3A
Power dissipation: 2W
Case: SOT223
Pulsed collector current: 8A
Mounting: SMD
Frequency: 240MHz
товару немає в наявності
Мінімальне замовлення: 4000 шт
В кошику  од. на суму  грн.
D5V0M5B6LP16-7 D5V0M5B6LP16.pdf
D5V0M5B6LP16-7
Виробник: DIODES INCORPORATED
Category: Protection diodes - arrays
Description: Diode: TVS array; 5.5V; 12A; bidirectional; U-DFN1616-6; Ch: 5
Mounting: SMD
Breakdown voltage: 5.5V
Max. forward impulse current: 12A
Max. off-state voltage: 5V
Kind of package: reel; tape
Semiconductor structure: bidirectional
Leakage current: 0.1µA
Case: U-DFN1616-6
Capacitance: 40pF
Type of diode: TVS array
Number of channels: 5
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В кошику  од. на суму  грн.
D26V0H1U2LP16-7 D26V0H1U2LP16.pdf
Виробник: DIODES INCORPORATED
Category: Unidirectional TVS SMD diodes
Description: Diode: TVS; 28V; 50A; unidirectional; U-DFN1616-2; reel,tape
Mounting: SMD
Breakdown voltage: 28V
Max. forward impulse current: 50A
Max. off-state voltage: 26V
Kind of package: reel; tape
Semiconductor structure: unidirectional
Leakage current: 0.1µA
Case: U-DFN1616-2
Type of diode: TVS
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AP7343D-20FS4-7B AP7343.pdf
Виробник: DIODES INCORPORATED
Category: LDO fixed voltage regulators
Description: IC: voltage regulator; LDO,linear,fixed; 2V; 0.3A; X2DFN4; SMD
Manufacturer series: AP7343
Output current: 0.3A
Mounting: SMD
Operating temperature: -40...85°C
Output voltage: 2V
Kind of package: reel; tape
Case: X2DFN4
Number of channels: 1
Tolerance: ±1%
Kind of voltage regulator: fixed; LDO; linear
Input voltage: 1.7...5.25V
Type of integrated circuit: voltage regulator
Voltage drop: 0.39V
Integrated circuit features: output discharge; shutdown mode control input
товару немає в наявності
Мінімальне замовлення: 5 шт
В кошику  од. на суму  грн.
SMCJ10CA-13-F SMCJ_ser.pdf
SMCJ10CA-13-F
Виробник: DIODES INCORPORATED
Category: Bidirectional TVS SMD diodes
Description: Diode: TVS; 1.5kW; 11.1÷12.3V; 88.2A; bidirectional; SMC; reel,tape
Type of diode: TVS
Peak pulse power dissipation: 1.5kW
Max. off-state voltage: 10V
Breakdown voltage: 11.1...12.3V
Max. forward impulse current: 88.2A
Semiconductor structure: bidirectional
Case: SMC
Mounting: SMD
Leakage current: 10µA
Features of semiconductor devices: glass passivated
Kind of package: reel; tape
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BZX84C2V4Q-7-F BZX84Cxx_SER.pdf
BZX84C2V4Q-7-F
Виробник: DIODES INCORPORATED
Category: SMD Zener diodes
Description: Diode: Zener; 0.35W; 2.4V; SMD; SOT23; single diode; reel,tape
Type of diode: Zener
Power dissipation: 0.35W
Zener voltage: 2.4V
Mounting: SMD
Tolerance: ±8%
Case: SOT23
Semiconductor structure: single diode
Kind of package: reel; tape
Application: automotive industry
товару немає в наявності
Мінімальне замовлення: 20 шт
В кошику  од. на суму  грн.
BZX84C2V4T-7-F BZX84CxxT_SER.pdf
BZX84C2V4T-7-F
Виробник: DIODES INCORPORATED
Category: SMD Zener diodes
Description: Diode: Zener; 0.15W; 2.4V; SMD; SOT523; single diode; reel,tape
Type of diode: Zener
Power dissipation: 0.15W
Zener voltage: 2.4V
Mounting: SMD
Tolerance: ±8.5%
Case: SOT523
Semiconductor structure: single diode
Kind of package: reel; tape
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BZX84C2V4TS-7-F BZX84CxxTS_SER.pdf
BZX84C2V4TS-7-F
Виробник: DIODES INCORPORATED
Category: SMD Zener diodes
Description: Diode: Zener; 0.2W; 2.4V; SMD; SOT363; triple independent
Type of diode: Zener
Power dissipation: 0.2W
Zener voltage: 2.4V
Mounting: SMD
Tolerance: ±8.5%
Case: SOT363
Semiconductor structure: triple independent
Kind of package: reel; tape
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BZX84C2V4W-7-F BZX84CxxW_SER.pdf
BZX84C2V4W-7-F
Виробник: DIODES INCORPORATED
Category: SMD Zener diodes
Description: Diode: Zener; 0.2W; 2.4V; SMD; SOT323; single diode; reel,tape
Type of diode: Zener
Power dissipation: 0.2W
Zener voltage: 2.4V
Mounting: SMD
Tolerance: ±8.5%
Case: SOT323
Semiconductor structure: single diode
Kind of package: reel; tape
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ZXMN10A07ZTA ZXMN10A07Z.pdf
ZXMN10A07ZTA
Виробник: DIODES INCORPORATED
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 100V; 1.1A; 1.5W; SOT89
Type of transistor: N-MOSFET
Polarisation: unipolar
Case: SOT89
Mounting: SMD
Kind of package: reel; tape
Power dissipation: 1.5W
Drain current: 1.1A
Kind of channel: enhancement
Drain-source voltage: 100V
Gate-source voltage: ±20V
On-state resistance: 0.9Ω
на замовлення 1656 шт:
термін постачання 14-30 дні (днів)
КількістьЦіна без ПДВ
8+62.50 грн
15+29.60 грн
50+25.04 грн
100+23.13 грн
250+20.65 грн
500+18.74 грн
1000+16.91 грн
Мінімальне замовлення: 8 шт
В кошику  од. на суму  грн.
FCX1051ATA FCX1051A.pdf
FCX1051ATA
Виробник: DIODES INCORPORATED
Category: NPN SMD transistors
Description: Transistor: NPN; bipolar; 40V; 3A; 2W; SOT89
Type of transistor: NPN
Polarisation: bipolar
Collector-emitter voltage: 40V
Collector current: 3A
Case: SOT89
Current gain: 40...1200
Mounting: SMD
Kind of package: reel; tape
Frequency: 155MHz
Manufacturer standard package: 1000pcs.
Power dissipation: 2W
Pulsed collector current: 10A
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BCX5510TA BCX54x-DTE.pdf
BCX5510TA
Виробник: DIODES INCORPORATED
Category: NPN SMD transistors
Description: Transistor: NPN; bipolar; 60V; 1A; 1W; SOT89
Type of transistor: NPN
Polarisation: bipolar
Collector-emitter voltage: 60V
Collector current: 1A
Power dissipation: 1W
Case: SOT89
Mounting: SMD
Frequency: 150MHz
Kind of package: reel; tape
Manufacturer standard package: 1000pcs.
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AP7365-10YG-13 AP7365.pdf
AP7365-10YG-13
Виробник: DIODES INCORPORATED
Category: LDO fixed voltage regulators
Description: IC: voltage regulator; LDO,linear,fixed; 1V; 0.6A; SOT89; SMD; ±2%
Case: SOT89
Mounting: SMD
Kind of package: reel; tape
Output current: 0.6A
Type of integrated circuit: voltage regulator
Voltage drop: 0.6V
Operating temperature: -40...85°C
Output voltage: 1V
Number of channels: 1
Tolerance: ±2%
Kind of voltage regulator: fixed; LDO; linear
Manufacturer series: AP7365
Input voltage: 2...6V
товару немає в наявності
Мінімальне замовлення: 3 шт
В кошику  од. на суму  грн.
ZXTP19100CZTA ZXTP19100CZ.pdf
ZXTP19100CZTA
Виробник: DIODES INCORPORATED
Category: PNP SMD transistors
Description: Transistor: PNP; bipolar; 100V; 2A; 4.46W; SOT89
Type of transistor: PNP
Polarisation: bipolar
Collector-emitter voltage: 100V
Collector current: 2A
Case: SOT89
Current gain: 20...500
Mounting: SMD
Kind of package: reel; tape
Frequency: 142MHz
Manufacturer standard package: 1000pcs.
Power dissipation: 4.46W
Pulsed collector current: 3A
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1N4934-T 1N4934_37.pdf
1N4934-T
Виробник: DIODES INCORPORATED
Category: THT universal diodes
Description: Diode: rectifying; THT; 100V; 1A; Ifsm: 30A; DO41; reel,tape; 200ns
Type of diode: rectifying
Mounting: THT
Max. off-state voltage: 0.1kV
Load current: 1A
Semiconductor structure: single diode
Capacitance: 15pF
Max. forward impulse current: 30A
Case: DO41
Kind of package: reel; tape
Max. forward voltage: 1.2V
Reverse recovery time: 200ns
на замовлення 490 шт:
термін постачання 14-30 дні (днів)
КількістьЦіна без ПДВ
63+7.14 грн
74+5.64 грн
82+5.06 грн
115+3.61 грн
Мінімальне замовлення: 63 шт
В кошику  од. на суму  грн.
DDZ33ASF-7 ds31987.pdf
DDZ33ASF-7
Виробник: DIODES INCORPORATED
Category: SMD Zener diodes
Description: Diode: Zener; 0.5W; 33V; SMD; SOD323F; single diode; reel,tape
Power dissipation: 0.5W
Kind of package: reel; tape
Semiconductor structure: single diode
Case: SOD323F
Zener voltage: 33V
Type of diode: Zener
Mounting: SMD
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BZT52C18LP-7 BZT52CxxLP_ser.pdf
Виробник: DIODES INCORPORATED
Category: SMD Zener diodes
Description: Diode: Zener; 0.25W; 18V; SMD; X1-DFN1006-2; single diode
Type of diode: Zener
Power dissipation: 0.25W
Zener voltage: 18V
Mounting: SMD
Tolerance: ±6.5%
Case: X1-DFN1006-2
Semiconductor structure: single diode
Kind of package: reel; tape
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BZT52C18Q-7-F BZT52Cxx_ser.pdf
BZT52C18Q-7-F
Виробник: DIODES INCORPORATED
Category: SMD Zener diodes
Description: Diode: Zener; 0.37W; 18V; SMD; SOD123; single diode; reel,tape
Type of diode: Zener
Power dissipation: 0.37W
Zener voltage: 18V
Mounting: SMD
Tolerance: ±6.5%
Case: SOD123
Semiconductor structure: single diode
Kind of package: reel; tape
Application: automotive industry
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GBU1002 GBU10_ser.pdf
GBU1002
Виробник: DIODES INCORPORATED
Category: Flat single phase diode bridge rectif.
Description: Bridge rectifier: single-phase; Urmax: 200V; If: 10A; Ifsm: 220A
Type of bridge rectifier: single-phase
Max. off-state voltage: 200V
Load current: 10A
Max. forward impulse current: 220A
Version: flat
Case: GBU
Electrical mounting: THT
Leads: flat pin
Kind of package: tube
Features of semiconductor devices: glass passivated
на замовлення 22 шт:
термін постачання 14-30 дні (днів)
КількістьЦіна без ПДВ
4+131.26 грн
10+76.28 грн
20+71.30 грн
Мінімальне замовлення: 4 шт
В кошику  од. на суму  грн.
GBU1001 GBU10_ser.pdf
GBU1001
Виробник: DIODES INCORPORATED
Category: Flat single phase diode bridge rectif.
Description: Bridge rectifier: single-phase; Urmax: 100V; If: 10A; Ifsm: 220A
Type of bridge rectifier: single-phase
Max. off-state voltage: 0.1kV
Load current: 10A
Max. forward impulse current: 220A
Version: flat
Case: GBU
Electrical mounting: THT
Leads: flat pin
Kind of package: tube
Features of semiconductor devices: glass passivated
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GBU1008 GBU10_ser.pdf
GBU1008
Виробник: DIODES INCORPORATED
Category: Flat single phase diode bridge rectif.
Description: Bridge rectifier: single-phase; Urmax: 800V; If: 10A; Ifsm: 220A
Type of bridge rectifier: single-phase
Max. off-state voltage: 0.8kV
Load current: 10A
Max. forward impulse current: 220A
Version: flat
Case: GBU
Electrical mounting: THT
Leads: flat pin
Kind of package: tube
Features of semiconductor devices: glass passivated
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GBU10005 GBU10_ser.pdf
GBU10005
Виробник: DIODES INCORPORATED
Category: Flat single phase diode bridge rectif.
Description: Bridge rectifier: single-phase; Urmax: 50V; If: 10A; Ifsm: 220A
Type of bridge rectifier: single-phase
Max. off-state voltage: 50V
Load current: 10A
Max. forward impulse current: 220A
Version: flat
Case: GBU
Electrical mounting: THT
Leads: flat pin
Kind of package: tube
Features of semiconductor devices: glass passivated
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GBU1004 GBU10_ser.pdf
GBU1004
Виробник: DIODES INCORPORATED
Category: Flat single phase diode bridge rectif.
Description: Bridge rectifier: single-phase; Urmax: 400V; If: 10A; Ifsm: 220A
Type of bridge rectifier: single-phase
Max. off-state voltage: 0.4kV
Load current: 10A
Max. forward impulse current: 220A
Version: flat
Case: GBU
Electrical mounting: THT
Leads: flat pin
Kind of package: tube
Features of semiconductor devices: glass passivated
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AL17050WT-7 AL17050info.pdf AL17050.pdf
AL17050WT-7
Виробник: DIODES INCORPORATED
Category: Voltage regulators - DC/DC circuits
Description: PMIC; DC/DC converter; Uin: 20÷400VDC; Uout: 3.4÷20VDC; 0.06A; SMD
Mounting: SMD
Input voltage: 20...400V DC
Output current: 60mA
Type of integrated circuit: PMIC
Operating temperature: -40...105°C
Efficiency: 50%
Output voltage: 3.4...20V DC
Kind of package: reel; tape
Case: TSOT25
Kind of integrated circuit: DC/DC converter
Frequency: 70kHz
Topology: buck
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