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ADTA124ECAQ-13 DIODES INCORPORATED ADTA124ECAQ.pdf Category: PNP SMD transistors
Description: Transistor: PNP; bipolar; BRT; 50V; 0.1A; 310mW; SOT23; R1: 22kΩ
Type of transistor: PNP
Polarisation: bipolar
Kind of transistor: BRT
Collector-emitter voltage: 50V
Collector current: 0.1A
Case: SOT23
Mounting: SMD
Kind of package: reel; tape
Base resistor: 22kΩ
Base-emitter resistor: 22kΩ
Power dissipation: 0.31W
Frequency: 250MHz
Quantity in set/package: 10000pcs.
Application: automotive industry
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DDTA124ECA-7-F DDTA124ECA-7-F DIODES INCORPORATED ds30333.pdf Category: PNP SMD transistors
Description: Transistor: PNP; bipolar; BRT; 50V; 100mA; 200mW; SOT23; R1: 22kΩ
Type of transistor: PNP
Polarisation: bipolar
Kind of transistor: BRT
Collector-emitter voltage: 50V
Collector current: 0.1A
Case: SOT23
Mounting: SMD
Kind of package: reel; tape
Base resistor: 22kΩ
Base-emitter resistor: 22kΩ
Current gain: 56
Power dissipation: 0.2W
Frequency: 250MHz
Quantity in set/package: 3000pcs.
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DDTA124EE-7-F DIODES INCORPORATED ds30317.pdf Category: PNP SMD transistors
Description: Transistor: PNP; bipolar; BRT; 50V; 0.1A; 150mW; SOT523; R1: 22kΩ
Type of transistor: PNP
Polarisation: bipolar
Kind of transistor: BRT
Collector-emitter voltage: 50V
Collector current: 0.1A
Case: SOT523
Mounting: SMD
Kind of package: reel; tape
Base resistor: 22kΩ
Base-emitter resistor: 22kΩ
Current gain: 56
Power dissipation: 0.15W
Frequency: 250MHz
Quantity in set/package: 3000pcs.
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DDTA124EUA-7-F DIODES INCORPORATED ds30325.pdf Category: PNP SMD transistors
Description: Transistor: PNP; bipolar; BRT; 50V; 0.1A; 200mW; SOT323; R1: 22kΩ
Type of transistor: PNP
Polarisation: bipolar
Kind of transistor: BRT
Collector-emitter voltage: 50V
Collector current: 0.1A
Case: SOT323
Mounting: SMD
Kind of package: reel; tape
Base resistor: 22kΩ
Base-emitter resistor: 22kΩ
Current gain: 56
Power dissipation: 0.2W
Frequency: 250MHz
Quantity in set/package: 3000pcs.
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BCR401UW6-7 BCR401UW6-7 DIODES INCORPORATED pVersion=0046&contRep=ZT&docId=005056AB752F1EE79186D98E613E0746&compId=BCR401UW6.pdf?ci_sign=137b027342fb1f3a42dae42a7898fd20c0fabe65 Category: LED drivers
Description: IC: driver; single transistor; current regulator,LED driver
Type of integrated circuit: driver
Topology: single transistor
Kind of integrated circuit: current regulator; LED driver
Case: SOT26
Output current: 10...100mA
Number of channels: 1
Integrated circuit features: linear dimming; PWM
Mounting: SMD
Operating temperature: -55...150°C
Operating voltage: 1.4...18V DC
Kind of package: reel; tape
на замовлення 2496 шт:
термін постачання 21-30 дні (днів)
23+19.57 грн
29+14.70 грн
32+13.05 грн
50+11.15 грн
100+10.24 грн
250+9.66 грн
500+9.33 грн
1000+8.92 грн
Мінімальне замовлення: 23
В кошику  од. на суму  грн.
ZVP2106A ZVP2106A DIODES INCORPORATED pVersion=0046&contRep=ZT&docId=005056AB281E1FD0AACBC8C774D9A0E2&compId=ZVP2106A.pdf?ci_sign=ddf038bda58d8f73e77061fcfa80d50140cb5453 Category: THT P channel transistors
Description: Transistor: P-MOSFET; unipolar; -60V; -0.28A; Idm: -4A; 0.7W; TO92
Type of transistor: P-MOSFET
Polarisation: unipolar
Drain-source voltage: -60V
Drain current: -280mA
Power dissipation: 0.7W
Case: TO92
Gate-source voltage: ±20V
On-state resistance: 5Ω
Mounting: THT
Kind of package: bulk
Kind of channel: enhancement
Pulsed drain current: -4A
на замовлення 3364 шт:
термін постачання 21-30 дні (днів)
8+59.59 грн
10+47.32 грн
40+40.14 грн
100+35.51 грн
200+32.37 грн
250+31.30 грн
500+28.41 грн
1000+27.91 грн
Мінімальне замовлення: 8
В кошику  од. на суму  грн.
DMC4029SSD-13 DMC4029SSD-13 DIODES INCORPORATED pVersion=0046&contRep=ZT&docId=005056AB752F1ED6879B5B084B72B1BF&compId=DMC4029SSD-13.pdf?ci_sign=e2277353b6106028baf363f0021aed1255723ec1 Category: Multi channel transistors
Description: Transistor: N/P-MOSFET; unipolar; complementary pair; 40/-40V
Case: SO8
Mounting: SMD
Kind of package: 13 inch reel; tape
Kind of channel: enhancement
Type of transistor: N/P-MOSFET
Polarisation: unipolar
On-state resistance: 0.024/0.045Ω
Power dissipation: 1.3W
Drain current: 6.5/-9A
Gate-source voltage: ±20V
Drain-source voltage: 40/-40V
Kind of transistor: complementary pair
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DMC4028SSD-13 DMC4028SSD-13 DIODES INCORPORATED pVersion=0046&contRep=ZT&docId=005056AB752F1ED6879B4F4F6FE5F1BF&compId=DMC4028SSD-13.pdf?ci_sign=4bd5ae437f532333a0613bd45d05f0e7500330ff Category: Multi channel transistors
Description: Transistor: N/P-MOSFET; unipolar; complementary pair; 40/-40V
Case: SO8
Mounting: SMD
Kind of package: 13 inch reel; tape
Kind of channel: enhancement
Type of transistor: N/P-MOSFET
Polarisation: unipolar
On-state resistance: 0.028/0.05Ω
Power dissipation: 1.8W
Drain current: 5.5/-4.2A
Gate-source voltage: ±20V
Drain-source voltage: 40/-40V
Kind of transistor: complementary pair
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DMG3414U-7 DMG3414U-7 DIODES INCORPORATED DMG3414U.pdf Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 20V; 3.2A; 0.78W; SOT23
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 20V
Drain current: 3.2A
Power dissipation: 0.78W
Case: SOT23
Gate-source voltage: ±8V
On-state resistance: 37mΩ
Mounting: SMD
Kind of package: 7 inch reel; tape
Kind of channel: enhancement
на замовлення 1894 шт:
термін постачання 21-30 дні (днів)
13+35.58 грн
18+23.70 грн
25+18.42 грн
100+12.64 грн
150+11.64 грн
500+9.66 грн
750+9.33 грн
1000+9.08 грн
Мінімальне замовлення: 13
В кошику  од. на суму  грн.
DMG3414UQ-13 DMG3414UQ-13 DIODES INCORPORATED DMG3414UQ.pdf Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 20V; 3.2A; Idm: 30A; 780mW; SOT23
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 20V
Drain current: 3.2A
Pulsed drain current: 30A
Power dissipation: 0.78W
Case: SOT23
Gate-source voltage: ±8V
On-state resistance: 37mΩ
Mounting: SMD
Gate charge: 9.6nC
Kind of package: 13 inch reel; tape
Kind of channel: enhancement
Application: automotive industry
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DMG3414UQ-7 DMG3414UQ-7 DIODES INCORPORATED DMG3414UQ.pdf Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 20V; 3.2A; Idm: 30A; 780mW; SOT23
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 20V
Drain current: 3.2A
Pulsed drain current: 30A
Power dissipation: 0.78W
Case: SOT23
Gate-source voltage: ±8V
On-state resistance: 37mΩ
Mounting: SMD
Gate charge: 9.6nC
Kind of package: 7 inch reel; tape
Kind of channel: enhancement
Application: automotive industry
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D12V0H1U2LP1610-7 DIODES INCORPORATED D12V0H1U2LP1610.pdf Category: Unidirectional TVS SMD diodes
Description: Diode: TVS; 1kW; 13V; 50A; unidirectional; reel,tape; Case: 0201
Mounting: SMD
Kind of package: reel; tape
Type of diode: TVS
Leakage current: 0.1µA
Max. off-state voltage: 12V
Breakdown voltage: 13V
Max. forward impulse current: 50A
Peak pulse power dissipation: 1kW
Case - inch: 0201
Case - mm: 0603
Semiconductor structure: unidirectional
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74AHC1G02W5-7 74AHC1G02W5-7 DIODES INCORPORATED pVersion=0046&contRep=ZT&docId=005056AB281E1EDDA4E70B30D02720D3&compId=74AHC1G02.pdf?ci_sign=53e23c7a4d759144f00c71ab61d7bb4183447f88 Category: Gates, inverters
Description: IC: digital; NOR; Ch: 1; IN: 2; CMOS; SMD; SOT25; 2÷5.5VDC; -40÷150°C
Type of integrated circuit: digital
Kind of gate: NOR
Number of channels: 1
Number of inputs: 2
Technology: CMOS
Mounting: SMD
Case: SOT25
Supply voltage: 2...5.5V DC
Operating temperature: -40...150°C
Kind of package: reel; tape
Family: AHC
Kind of output: push-pull
Kind of input: with Schmitt trigger
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BAV170Q-7-F DIODES INCORPORATED ds30234.pdf Category: SMD universal diodes
Description: Diode: switching; SMD; 85V; 0.215A; 3us; SOT23; Ufmax: 1.25V; Ifsm: 4A
Type of diode: switching
Mounting: SMD
Max. off-state voltage: 85V
Load current: 0.215A
Reverse recovery time: 3µs
Semiconductor structure: common cathode; double
Case: SOT23
Max. forward voltage: 1.25V
Max. forward impulse current: 4A
Kind of package: reel; tape
Features of semiconductor devices: small signal
Application: automotive industry
Max. load current: 0.5A
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D28V0H1U2P5Q-13 DIODES INCORPORATED D28V0H1U2P5Q.pdf Category: Unidirectional TVS SMD diodes
Description: Diode: TVS; 1.8kW; 31V; 41A; unidirectional; PowerDI®5; reel,tape
Mounting: SMD
Kind of package: reel; tape
Semiconductor structure: unidirectional
Type of diode: TVS
Leakage current: 0.1µA
Max. off-state voltage: 28V
Breakdown voltage: 31V
Max. forward impulse current: 41A
Peak pulse power dissipation: 1.8kW
Case: PowerDI®5
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DCX123JU-7-F DCX123JU-7-F DIODES INCORPORATED DCX_XXXX_U.pdf Category: Complementary transistors
Description: Transistor: NPN / PNP; bipolar; BRT,complementary pair; 50V; 0.1A
Type of transistor: NPN / PNP
Polarisation: bipolar
Collector-emitter voltage: 50V
Collector current: 0.1A
Power dissipation: 0.2W
Case: SOT363
Mounting: SMD
Quantity in set/package: 3000pcs.
Kind of package: reel; tape
Frequency: 250MHz
Kind of transistor: BRT; complementary pair
Base resistor: 2.2kΩ
Base-emitter resistor: 47kΩ
на замовлення 923 шт:
термін постачання 21-30 дні (днів)
34+13.34 грн
48+8.75 грн
55+7.60 грн
100+4.96 грн
500+3.83 грн
Мінімальне замовлення: 34
В кошику  од. на суму  грн.
ZXTP23140BFHTA DIODES INCORPORATED ZXTP23140BFH.pdf Category: PNP SMD transistors
Description: Transistor: PNP; bipolar; 140V; 2.5A; 1.25W; SOT23
Type of transistor: PNP
Polarisation: bipolar
Collector-emitter voltage: 140V
Collector current: 2.5A
Power dissipation: 1.25W
Case: SOT23
Pulsed collector current: 5A
Mounting: SMD
Quantity in set/package: 3000pcs.
Kind of package: reel; tape
Frequency: 130MHz
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AP2166SG-13 AP2166SG-13 DIODES INCORPORATED AP2166_76.pdf Category: Power switches - integrated circuits
Description: IC: power switch; high-side,USB switch; 1A; Ch: 2; P-Channel; SMD
Type of integrated circuit: power switch
Mounting: SMD
Supply voltage: 2.7...5.5V DC
Number of channels: 2
Case: SO8
Kind of output: P-Channel
Output current: 1A
On-state resistance: 0.1Ω
Kind of integrated circuit: high-side; USB switch
Kind of package: reel; tape
Active logical level: low
на замовлення 1640 шт:
термін постачання 21-30 дні (днів)
9+52.48 грн
13+34.36 грн
25+31.05 грн
75+27.91 грн
100+27.25 грн
250+25.44 грн
500+24.45 грн
Мінімальне замовлення: 9
В кошику  од. на суму  грн.
AP2331FJ-7 DIODES INCORPORATED AP2331.pdf Category: Power switches - integrated circuits
Description: IC: power switch; high-side; 0.2A; Ch: 1; SMD; U-DFN2020-3
Type of integrated circuit: power switch
Kind of integrated circuit: high-side
Output current: 0.2A
Number of channels: 1
Mounting: SMD
Case: U-DFN2020-3
On-state resistance: 0.25Ω
Kind of package: reel; tape
Supply voltage: 2.7...5.2V DC
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AP2331TDSA-7 AP2331TDSA-7 DIODES INCORPORATED AP2331TD.pdf Category: Power switches - integrated circuits
Description: IC: power switch; high-side; 0.2A; Ch: 1; SMD; SOT23; reel,tape
Type of integrated circuit: power switch
Kind of integrated circuit: high-side
Output current: 0.2A
Number of channels: 1
Mounting: SMD
Case: SOT23
On-state resistance: 0.25Ω
Kind of package: reel; tape
Supply voltage: 2.7...5.2V DC
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DMN3030LSS-13 DMN3030LSS-13 DIODES INCORPORATED DMN3030LSS.pdf Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 30V; 6.75A; Idm: 40A; 2.5W; SO8
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 30V
Drain current: 6.75A
Pulsed drain current: 40A
Power dissipation: 2.5W
Case: SO8
Gate-source voltage: ±25V
On-state resistance: 30mΩ
Mounting: SMD
Gate charge: 25nC
Kind of package: 13 inch reel; tape
Kind of channel: enhancement
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AP2191DWG-7 AP2191DWG-7 DIODES INCORPORATED pVersion=0046&contRep=ZT&docId=005056AB82531EE98AA36303EDF3F8BF&compId=AP2181_91.pdf?ci_sign=d341c3865dd0b7568f70f5682e699bac0286fffc Category: Power switches - integrated circuits
Description: IC: power switch; high-side,USB switch; 1.5A; Ch: 1; P-Channel; SMD
Type of integrated circuit: power switch
Kind of integrated circuit: high-side; USB switch
Output current: 1.5A
Number of channels: 1
Kind of output: P-Channel
Mounting: SMD
Case: SOT25
On-state resistance: 95mΩ
Kind of package: reel; tape
Supply voltage: 2.7...5.5V DC
Active logical level: high
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AP2191AW-7 AP2191AW-7 DIODES INCORPORATED AP2181A-91A.pdf Category: Power switches - integrated circuits
Description: IC: power switch; high-side,USB switch; 1.5A; Ch: 1; P-Channel; SMD
Type of integrated circuit: power switch
Kind of integrated circuit: high-side; USB switch
Output current: 1.5A
Number of channels: 1
Kind of output: P-Channel
Mounting: SMD
Case: SOT25
On-state resistance: 95mΩ
Kind of package: reel; tape
Supply voltage: 2.7...5.5V DC
Active logical level: high
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AP2191SG-13 AP2191SG-13 DIODES INCORPORATED AP2181_91.pdf Category: Power switches - integrated circuits
Description: IC: power switch; high-side,USB switch; 1.5A; Ch: 1; P-Channel; SMD
Type of integrated circuit: power switch
Kind of integrated circuit: high-side; USB switch
Output current: 1.5A
Number of channels: 1
Kind of output: P-Channel
Mounting: SMD
Case: SO8
On-state resistance: 95mΩ
Kind of package: reel; tape
Supply voltage: 2.7...5.5V DC
Active logical level: high
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AP2191WG-7 AP2191WG-7 DIODES INCORPORATED pVersion=0046&contRep=ZT&docId=005056AB82531EE98AA36303EDF3F8BF&compId=AP2181_91.pdf?ci_sign=d341c3865dd0b7568f70f5682e699bac0286fffc Category: Power switches - integrated circuits
Description: IC: power switch; high-side,USB switch; 1.5A; Ch: 1; P-Channel; SMD
Type of integrated circuit: power switch
Kind of integrated circuit: high-side; USB switch
Output current: 1.5A
Number of channels: 1
Kind of output: P-Channel
Mounting: SMD
Case: SOT25
On-state resistance: 95mΩ
Kind of package: reel; tape
Supply voltage: 2.7...5.5V DC
Active logical level: high
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AP2191DFMG-7 DIODES INCORPORATED AP2181D_91D.pdf Category: Power switches - integrated circuits
Description: IC: power switch; high-side,USB switch; 1.5A; Ch: 1; P-Channel; SMD
Type of integrated circuit: power switch
Kind of integrated circuit: high-side; USB switch
Output current: 1.5A
Number of channels: 1
Kind of output: P-Channel
Mounting: SMD
Case: U-DFN2018-6
On-state resistance: 90mΩ
Kind of package: reel; tape
Supply voltage: 2.7...5.5V DC
Active logical level: high
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AP2191DSG-13-82 DIODES INCORPORATED Category: Power switches - integrated circuits
Description: IC: power switch; high-side,USB switch; 1.5A; Ch: 1; P-Channel; SMD
Type of integrated circuit: power switch
Kind of integrated circuit: high-side; USB switch
Output current: 1.5A
Number of channels: 1
Kind of output: P-Channel
Mounting: SMD
Case: SO8-W
On-state resistance: 90mΩ
Supply voltage: 2.7...5.5V DC
Active logical level: high
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AP2191FMG-7 DIODES INCORPORATED AP2181_91.pdf Category: Power switches - integrated circuits
Description: IC: power switch; high-side,USB switch; 1.5A; Ch: 1; P-Channel; SMD
Type of integrated circuit: power switch
Kind of integrated circuit: high-side; USB switch
Output current: 1.5A
Number of channels: 1
Kind of output: P-Channel
Mounting: SMD
Case: U-DFN2018-6
On-state resistance: 95mΩ
Kind of package: reel; tape
Supply voltage: 2.7...5.5V DC
Active logical level: high
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B240-13-F B240-13-F DIODES INCORPORATED B220A_B260A.pdf Category: SMD Schottky diodes
Description: Diode: Schottky rectifying; SMB; SMD; 40V; 2A; reel,tape
Type of diode: Schottky rectifying
Max. off-state voltage: 40V
Semiconductor structure: single diode
Case: SMB
Mounting: SMD
Kind of package: reel; tape
Capacitance: 200pF
Max. forward voltage: 0.5V
Load current: 2A
Max. forward impulse current: 50A
на замовлення 4407 шт:
термін постачання 21-30 дні (днів)
23+19.57 грн
31+13.54 грн
34+12.39 грн
100+8.82 грн
500+6.75 грн
1000+5.92 грн
3000+4.71 грн
Мінімальне замовлення: 23
В кошику  од. на суму  грн.
B240S1F-7 B240S1F-7 DIODES INCORPORATED B240S1F.pdf Category: SMD Schottky diodes
Description: Diode: Schottky rectifying; SOD123F; SMD; 40V; 2A; reel,tape
Case: SOD123F
Mounting: SMD
Kind of package: reel; tape
Max. forward impulse current: 50A
Max. off-state voltage: 40V
Type of diode: Schottky rectifying
Semiconductor structure: single diode
Capacitance: 0.1nF
Leakage current: 12.6mA
Load current: 2A
Max. forward voltage: 0.5V
на замовлення 2170 шт:
термін постачання 21-30 дні (днів)
30+15.12 грн
40+10.57 грн
100+7.54 грн
500+5.82 грн
1000+5.17 грн
Мінімальне замовлення: 30
В кошику  од. на суму  грн.
B240Q-13-F DIODES INCORPORATED B220_A-B260_A.pdf Category: SMD Schottky diodes
Description: Diode: Schottky rectifying; SMB; SMD; 40V; 2A; reel,tape
Application: automotive industry
Case: SMB
Mounting: SMD
Type of diode: Schottky rectifying
Semiconductor structure: single diode
Capacitance: 200pF
Leakage current: 20mA
Max. forward voltage: 0.5V
Load current: 2A
Max. off-state voltage: 40V
Max. forward impulse current: 50A
Kind of package: reel; tape
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ZXMS82120S14PQ-13 DIODES INCORPORATED ZXMS82120S14PQ.pdf Category: Power switches - integrated circuits
Description: IC: power switch
Type of integrated circuit: power switch
на замовлення 2500 шт:
термін постачання 21-30 дні (днів)
2500+85.38 грн
Мінімальне замовлення: 2500
В кошику  од. на суму  грн.
DXTN22040CFGQ-7 DIODES INCORPORATED DXTN22040CFGQ.pdf Category: NPN SMD transistors
Description: Transistor: NPN
Type of transistor: NPN
на замовлення 2000 шт:
термін постачання 21-30 дні (днів)
2000+17.17 грн
Мінімальне замовлення: 2000
В кошику  од. на суму  грн.
DXTN22040DFGQ-7 DIODES INCORPORATED DXTN22040DFGQ.pdf Category: NPN SMD transistors
Description: Transistor: NPN
Type of transistor: NPN
на замовлення 2000 шт:
термін постачання 21-30 дні (днів)
2000+17.17 грн
Мінімальне замовлення: 2000
В кошику  од. на суму  грн.
DXTP22040CFGQ-7 DIODES INCORPORATED DXTP22040CFGQ.pdf Category: PNP SMD transistors
Description: Transistor: PNP
Type of transistor: PNP
на замовлення 2000 шт:
термін постачання 21-30 дні (днів)
2000+17.17 грн
Мінімальне замовлення: 2000
В кошику  од. на суму  грн.
DXTP22040DFGQ-7 DIODES INCORPORATED DXTP22040DFGQ.pdf Category: PNP SMD transistors
Description: Transistor: PNP
Type of transistor: PNP
на замовлення 2000 шт:
термін постачання 21-30 дні (днів)
2000+17.17 грн
Мінімальне замовлення: 2000
В кошику  од. на суму  грн.
AZ23C8V2-7-F AZ23C8V2-7-F DIODES INCORPORATED pVersion=0046&contRep=ZT&docId=005056AB0ED61ED8B7A017D94BAE6143&compId=AZ23C_ser.pdf?ci_sign=f8289f634af17fc3dccb307520c64a27b76de4d8 Category: SMD Zener diodes
Description: Diode: Zener; 0.3W; 8.2V; SMD; reel,tape; SOT23
Type of diode: Zener
Power dissipation: 0.3W
Zener voltage: 8.2V
Mounting: SMD
Tolerance: ±5%
Kind of package: reel; tape
Case: SOT23
Semiconductor structure: common anode; double
на замовлення 4980 шт:
термін постачання 21-30 дні (днів)
36+12.45 грн
45+9.25 грн
54+7.76 грн
108+3.84 грн
500+2.97 грн
3000+2.71 грн
Мінімальне замовлення: 36
В кошику  од. на суму  грн.
BZT52C8V2-7-F BZT52C8V2-7-F DIODES INCORPORATED pVersion=0046&contRep=ZT&docId=005056AB752F1ED7BED5211ADD746A18&compId=BZT52Cxx_ser.pdf?ci_sign=95d454b64d194db3b460a4ff8a5c90b54420aea6 Category: SMD Zener diodes
Description: Diode: Zener; 0.37W; 8.2V; SMD; reel,tape; SOD123; single diode
Type of diode: Zener
Power dissipation: 0.37W
Zener voltage: 8.2V
Mounting: SMD
Tolerance: ±6%
Kind of package: reel; tape
Case: SOD123
Semiconductor structure: single diode
на замовлення 7660 шт:
термін постачання 21-30 дні (днів)
63+7.12 грн
87+4.79 грн
112+3.70 грн
170+2.44 грн
1600+1.46 грн
3000+1.38 грн
6000+1.33 грн
Мінімальне замовлення: 63
В кошику  од. на суму  грн.
DZ23C8V2-7-F DIODES INCORPORATED DZ23C2V7-DZ23C51.pdf Category: SMD Zener diodes
Description: Diode: Zener; 0.3W; 8.2V; SMD; reel,tape; SOT23
Type of diode: Zener
Power dissipation: 0.3W
Zener voltage: 8.2V
Mounting: SMD
Kind of package: reel; tape
Case: SOT23
Semiconductor structure: common cathode; double
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BZT52C8V2Q-7-F DIODES INCORPORATED ds18004.pdf Category: SMD Zener diodes
Description: Diode: Zener; 0.37W; 8.2V; SMD; reel,tape; SOD123; single diode
Type of diode: Zener
Power dissipation: 0.37W
Zener voltage: 8.2V
Mounting: SMD
Tolerance: ±6%
Kind of package: reel; tape
Case: SOD123
Semiconductor structure: single diode
Application: automotive industry
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MBRB20200CT-13 DIODES INCORPORATED MBRB20200CT.pdf Category: SMD Schottky diodes
Description: Diode: Schottky rectifying; D2PAK; SMD; 200V; 10Ax2; reel,tape
Type of diode: Schottky rectifying
Case: D2PAK
Mounting: SMD
Max. off-state voltage: 200V
Load current: 10A x2
Semiconductor structure: common cathode; double
Max. forward voltage: 0.89V
Leakage current: 10mA
Max. forward impulse current: 170A
Kind of package: reel; tape
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MBRD20200CT-13 DIODES INCORPORATED MBRD20200CT.pdf Category: SMD Schottky diodes
Description: Diode: Schottky rectifying; DPAK; SMD; 200V; 10Ax2; reel,tape
Type of diode: Schottky rectifying
Mounting: SMD
Max. off-state voltage: 200V
Load current: 10A x2
Semiconductor structure: common cathode; double
Case: DPAK
Max. forward voltage: 0.9V
Max. forward impulse current: 150A
Kind of package: reel; tape
Leakage current: 1mA
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DSS5320T-7 DIODES INCORPORATED DSS5320T.pdf Category: PNP SMD transistors
Description: Transistor: PNP; bipolar; 20V; 2A; 600mW; SOT23
Mounting: SMD
Type of transistor: PNP
Power dissipation: 0.6W
Case: SOT23
Collector current: 2A
Pulsed collector current: 5A
Collector-emitter voltage: 20V
Current gain: 100...220
Quantity in set/package: 3000pcs.
Polarisation: bipolar
Frequency: 100...180MHz
Kind of package: reel; tape
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B330A-13-F B330A-13-F DIODES INCORPORATED pVersion=0046&contRep=ZT&docId=005056AB752F1EE584EA383D53230469&compId=B320A-13-F.pdf?ci_sign=edde656f9367791a6672056dbd13e96b0d748afe Category: SMD Schottky diodes
Description: Diode: Schottky rectifying; SMA; SMD; 30V; 3A; reel,tape; 850mW
Power dissipation: 0.85W
Case: SMA
Mounting: SMD
Kind of package: reel; tape
Type of diode: Schottky rectifying
Semiconductor structure: single diode
Capacitance: 200pF
Max. forward voltage: 0.5V
Load current: 3A
Max. off-state voltage: 30V
Max. forward impulse current: 80A
на замовлення 2289 шт:
термін постачання 21-30 дні (днів)
16+29.35 грн
21+20.32 грн
25+17.76 грн
100+14.29 грн
250+12.47 грн
500+11.31 грн
1000+10.24 грн
2000+9.25 грн
Мінімальне замовлення: 16
В кошику  од. на суму  грн.
B330-13-F B330-13-F DIODES INCORPORATED b320-360.pdf Category: SMD Schottky diodes
Description: Diode: Schottky rectifying; SMC; SMD; 30V; 3A; reel,tape
Type of diode: Schottky rectifying
Max. off-state voltage: 30V
Semiconductor structure: single diode
Case: SMC
Mounting: SMD
Kind of package: reel; tape
Capacitance: 200pF
Max. forward voltage: 0.5V
Load current: 3A
Max. forward impulse current: 100A
на замовлення 2592 шт:
термін постачання 21-30 дні (днів)
12+37.36 грн
15+27.75 грн
17+24.94 грн
100+17.10 грн
250+14.70 грн
500+13.21 грн
1000+11.73 грн
Мінімальне замовлення: 12
В кошику  од. на суму  грн.
ZXMN2F34FHTA ZXMN2F34FHTA DIODES INCORPORATED pVersion=0046&contRep=ZT&docId=005056AB82531EE986CBF247D42A18BF&compId=ZXMN2F34FH.pdf?ci_sign=799affe8426fd8dcc5d6bb0a5196f1cffc52a0d7 Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 20V; 2.9A; 0.95W; SOT23
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 20V
Drain current: 2.9A
Power dissipation: 0.95W
Case: SOT23
Gate-source voltage: ±12V
On-state resistance: 0.12Ω
Mounting: SMD
Kind of package: reel; tape
Kind of channel: enhancement
на замовлення 738 шт:
термін постачання 21-30 дні (днів)
20+22.24 грн
28+15.20 грн
32+13.13 грн
50+10.41 грн
Мінімальне замовлення: 20
В кошику  од. на суму  грн.
ABS210-13 DIODES INCORPORATED ABS210.pdf Category: SMD/THT sing. phase diode bridge rectif.
Description: Bridge rectifier: single-phase; Urmax: 1kV; If: 2A; Ifsm: 60A; SOPA4
Type of bridge rectifier: single-phase
Max. off-state voltage: 1kV
Load current: 2A
Max. forward impulse current: 60A
Case: SOPA4
Electrical mounting: SMT
Max. forward voltage: 1.1V
Leads: soldering pads
Max. load current: 2A
на замовлення 20000 шт:
термін постачання 21-30 дні (днів)
5000+7.38 грн
Мінімальне замовлення: 5000
В кошику  од. на суму  грн.
SMCJ16AQ-13-F DIODES INCORPORATED SMCJ5.0CAQ_SMCJ110CAQ.pdf Category: Unidirectional TVS SMD diodes
Description: Diode: TVS; 1.5kW; 17.8÷19.7V; 57.7A; unidirectional; SMC
Type of diode: TVS
Peak pulse power dissipation: 1.5kW
Max. off-state voltage: 16V
Breakdown voltage: 17.8...19.7V
Max. forward impulse current: 57.7A
Semiconductor structure: unidirectional
Case: SMC
Mounting: SMD
Leakage current: 5µA
Kind of package: reel; tape
Features of semiconductor devices: glass passivated
Application: automotive industry
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SMAJ100A-13-F SMAJ100A-13-F DIODES INCORPORATED pVersion=0046&contRep=ZT&docId=005056AB281E1EDCB5D5D61A59AC00D2&compId=SMAJ_ser.pdf?ci_sign=97d7e07ffaac288e0eb21ce6c5e39913c3418386 Category: Unidirectional TVS SMD diodes
Description: Diode: TVS; 0.4kW; 111÷123V; 2.5A; unidirectional; SMA; reel,tape
Type of diode: TVS
Peak pulse power dissipation: 0.4kW
Max. off-state voltage: 100V
Breakdown voltage: 111...123V
Max. forward impulse current: 2.5A
Semiconductor structure: unidirectional
Case: SMA
Mounting: SMD
Leakage current: 5µA
Features of semiconductor devices: glass passivated
Kind of package: reel; tape
на замовлення 1907 шт:
термін постачання 21-30 дні (днів)
25+17.79 грн
30+13.87 грн
36+11.48 грн
100+4.34 грн
Мінімальне замовлення: 25
В кошику  од. на суму  грн.
SMAJ100CA-13-F SMAJ100CA-13-F DIODES INCORPORATED pVersion=0046&contRep=ZT&docId=005056AB281E1EDCB5D5D61A59AC00D2&compId=SMAJ_ser.pdf?ci_sign=97d7e07ffaac288e0eb21ce6c5e39913c3418386 Category: Bidirectional TVS SMD diodes
Description: Diode: TVS; 0.4kW; 111÷123V; 2.5A; bidirectional; SMA; reel,tape
Type of diode: TVS
Peak pulse power dissipation: 0.4kW
Max. off-state voltage: 100V
Breakdown voltage: 111...123V
Max. forward impulse current: 2.5A
Semiconductor structure: bidirectional
Case: SMA
Mounting: SMD
Leakage current: 5µA
Features of semiconductor devices: glass passivated
Kind of package: reel; tape
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SBR10A45SP5-13 DIODES INCORPORATED SBR10A45SP5.pdf Category: SMD Schottky diodes
Description: Diode: Schottky rectifying; PowerDI®5; SBR®; SMD; 45V; 10A
Mounting: SMD
Case: PowerDI®5
Type of diode: Schottky rectifying
Technology: SBR®
Leakage current: 0.4mA
Max. forward voltage: 0.53V
Load current: 10A
Max. off-state voltage: 45V
Max. forward impulse current: 180A
Kind of package: reel; tape
Semiconductor structure: single diode
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DMN1004UFV-13 DIODES INCORPORATED DMN1004UFV.pdf Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 12V; 50A; Idm: 80A; 1.9W
On-state resistance: 5.1mΩ
Power dissipation: 1.9W
Gate-source voltage: ±8V
Kind of package: 13 inch reel; tape
Kind of channel: enhancement
Type of transistor: N-MOSFET
Case: PowerDI3333-8
Mounting: SMD
Polarisation: unipolar
Pulsed drain current: 80A
Drain current: 50A
Drain-source voltage: 12V
Gate charge: 47nC
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DMP2010UFV-13 DIODES INCORPORATED DMP2010UFV.pdf Category: SMD P channel transistors
Description: Transistor: P-MOSFET; unipolar; -20V; -40A; Idm: -80A; 2W
On-state resistance: 12.5mΩ
Power dissipation: 2W
Gate-source voltage: ±10V
Kind of package: 13 inch reel; tape
Kind of channel: enhancement
Type of transistor: P-MOSFET
Case: PowerDI3333-8
Mounting: SMD
Polarisation: unipolar
Pulsed drain current: -80A
Drain current: -40A
Drain-source voltage: -20V
Gate charge: 103nC
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DMP3013SFV-13 DIODES INCORPORATED DMP3013SFV.pdf Category: SMD P channel transistors
Description: Transistor: P-MOSFET; unipolar; -30V; -10A; Idm: -80A; 1.94W
On-state resistance: 17mΩ
Power dissipation: 1.94W
Gate-source voltage: ±25V
Kind of package: 13 inch reel; tape
Kind of channel: enhancement
Type of transistor: P-MOSFET
Case: PowerDI3333-8
Mounting: SMD
Polarisation: unipolar
Pulsed drain current: -80A
Drain current: -10A
Drain-source voltage: -30V
Gate charge: 33.7nC
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DMP3018SFV-13 DIODES INCORPORATED DMP3018SFV.pdf Category: SMD P channel transistors
Description: Transistor: P-MOSFET; unipolar; -30V; -9A; Idm: -70A; 1.9W
Type of transistor: P-MOSFET
Polarisation: unipolar
Drain-source voltage: -30V
Drain current: -9A
Pulsed drain current: -70A
Power dissipation: 1.9W
Case: PowerDI3333-8
Gate-source voltage: ±25V
On-state resistance: 21mΩ
Mounting: SMD
Gate charge: 51nC
Kind of package: 13 inch reel; tape
Kind of channel: enhancement
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DMP3036SFV-13 DIODES INCORPORATED DMP3036SFV.pdf Category: SMD P channel transistors
Description: Transistor: P-MOSFET; unipolar; -30V; -7A; Idm: -80A; 2.3W
On-state resistance: 29mΩ
Power dissipation: 2.3W
Gate-source voltage: ±25V
Kind of package: 13 inch reel; tape
Kind of channel: enhancement
Type of transistor: P-MOSFET
Case: PowerDI3333-8
Mounting: SMD
Polarisation: unipolar
Pulsed drain current: -80A
Drain current: -7A
Drain-source voltage: -30V
Gate charge: 16.5nC
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DMT2004UFV-13 DIODES INCORPORATED DMT2004UFV.pdf Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 24V; 55A; Idm: 90A; 2.3W
Case: PowerDI3333-8
Mounting: SMD
Drain-source voltage: 24V
Pulsed drain current: 90A
Drain current: 55A
Gate charge: 53.7nC
On-state resistance: 10mΩ
Power dissipation: 2.3W
Gate-source voltage: ±12V
Kind of package: 13 inch reel; tape
Kind of channel: enhancement
Type of transistor: N-MOSFET
Polarisation: unipolar
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DMT35M7LFV-13 DIODES INCORPORATED Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 30V; 61A; Idm: 90A; 1.98W
On-state resistance: 8.5mΩ
Power dissipation: 1.98W
Gate-source voltage: ±20V
Kind of package: 13 inch reel; tape
Kind of channel: enhancement
Type of transistor: N-MOSFET
Case: PowerDI3333-8
Mounting: SMD
Polarisation: unipolar
Pulsed drain current: 90A
Drain current: 61A
Drain-source voltage: 30V
Gate charge: 36nC
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DMT69M8LFV-13 DIODES INCORPORATED DMT69M8LFV.pdf Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 60V; 8.9A; Idm: 60A; 2.2W
On-state resistance: 13.3mΩ
Power dissipation: 2.2W
Gate-source voltage: ±16V
Kind of package: 13 inch reel; tape
Kind of channel: enhancement
Type of transistor: N-MOSFET
Case: PowerDI3333-8
Mounting: SMD
Polarisation: unipolar
Pulsed drain current: 60A
Drain current: 8.9A
Drain-source voltage: 60V
Gate charge: 33.5nC
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DMMT5551S-7-F DMMT5551S-7-F DIODES INCORPORATED pVersion=0046&contRep=ZT&docId=005056AB82531EE986AC5E03E61C78BF&compId=DMMT5551.pdf?ci_sign=f60cd0e5a12f975d11403171edbc245cb1734cb2 Category: NPN SMD transistors
Description: Transistor: NPN x2; bipolar; 160V; 0.2A; 300mW; SOT26
Type of transistor: NPN x2
Polarisation: bipolar
Collector-emitter voltage: 160V
Collector current: 0.2A
Power dissipation: 0.3W
Case: SOT26
Current gain: 50...250
Mounting: SMD
Quantity in set/package: 3000pcs.
Kind of package: reel; tape
Frequency: 100...300MHz
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ADTA124ECAQ-13 ADTA124ECAQ.pdf
Виробник: DIODES INCORPORATED
Category: PNP SMD transistors
Description: Transistor: PNP; bipolar; BRT; 50V; 0.1A; 310mW; SOT23; R1: 22kΩ
Type of transistor: PNP
Polarisation: bipolar
Kind of transistor: BRT
Collector-emitter voltage: 50V
Collector current: 0.1A
Case: SOT23
Mounting: SMD
Kind of package: reel; tape
Base resistor: 22kΩ
Base-emitter resistor: 22kΩ
Power dissipation: 0.31W
Frequency: 250MHz
Quantity in set/package: 10000pcs.
Application: automotive industry
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DDTA124ECA-7-F ds30333.pdf
DDTA124ECA-7-F
Виробник: DIODES INCORPORATED
Category: PNP SMD transistors
Description: Transistor: PNP; bipolar; BRT; 50V; 100mA; 200mW; SOT23; R1: 22kΩ
Type of transistor: PNP
Polarisation: bipolar
Kind of transistor: BRT
Collector-emitter voltage: 50V
Collector current: 0.1A
Case: SOT23
Mounting: SMD
Kind of package: reel; tape
Base resistor: 22kΩ
Base-emitter resistor: 22kΩ
Current gain: 56
Power dissipation: 0.2W
Frequency: 250MHz
Quantity in set/package: 3000pcs.
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DDTA124EE-7-F ds30317.pdf
Виробник: DIODES INCORPORATED
Category: PNP SMD transistors
Description: Transistor: PNP; bipolar; BRT; 50V; 0.1A; 150mW; SOT523; R1: 22kΩ
Type of transistor: PNP
Polarisation: bipolar
Kind of transistor: BRT
Collector-emitter voltage: 50V
Collector current: 0.1A
Case: SOT523
Mounting: SMD
Kind of package: reel; tape
Base resistor: 22kΩ
Base-emitter resistor: 22kΩ
Current gain: 56
Power dissipation: 0.15W
Frequency: 250MHz
Quantity in set/package: 3000pcs.
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DDTA124EUA-7-F ds30325.pdf
Виробник: DIODES INCORPORATED
Category: PNP SMD transistors
Description: Transistor: PNP; bipolar; BRT; 50V; 0.1A; 200mW; SOT323; R1: 22kΩ
Type of transistor: PNP
Polarisation: bipolar
Kind of transistor: BRT
Collector-emitter voltage: 50V
Collector current: 0.1A
Case: SOT323
Mounting: SMD
Kind of package: reel; tape
Base resistor: 22kΩ
Base-emitter resistor: 22kΩ
Current gain: 56
Power dissipation: 0.2W
Frequency: 250MHz
Quantity in set/package: 3000pcs.
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BCR401UW6-7 pVersion=0046&contRep=ZT&docId=005056AB752F1EE79186D98E613E0746&compId=BCR401UW6.pdf?ci_sign=137b027342fb1f3a42dae42a7898fd20c0fabe65
BCR401UW6-7
Виробник: DIODES INCORPORATED
Category: LED drivers
Description: IC: driver; single transistor; current regulator,LED driver
Type of integrated circuit: driver
Topology: single transistor
Kind of integrated circuit: current regulator; LED driver
Case: SOT26
Output current: 10...100mA
Number of channels: 1
Integrated circuit features: linear dimming; PWM
Mounting: SMD
Operating temperature: -55...150°C
Operating voltage: 1.4...18V DC
Kind of package: reel; tape
на замовлення 2496 шт:
термін постачання 21-30 дні (днів)
Кількість Ціна
23+19.57 грн
29+14.70 грн
32+13.05 грн
50+11.15 грн
100+10.24 грн
250+9.66 грн
500+9.33 грн
1000+8.92 грн
Мінімальне замовлення: 23
В кошику  од. на суму  грн.
ZVP2106A pVersion=0046&contRep=ZT&docId=005056AB281E1FD0AACBC8C774D9A0E2&compId=ZVP2106A.pdf?ci_sign=ddf038bda58d8f73e77061fcfa80d50140cb5453
ZVP2106A
Виробник: DIODES INCORPORATED
Category: THT P channel transistors
Description: Transistor: P-MOSFET; unipolar; -60V; -0.28A; Idm: -4A; 0.7W; TO92
Type of transistor: P-MOSFET
Polarisation: unipolar
Drain-source voltage: -60V
Drain current: -280mA
Power dissipation: 0.7W
Case: TO92
Gate-source voltage: ±20V
On-state resistance: 5Ω
Mounting: THT
Kind of package: bulk
Kind of channel: enhancement
Pulsed drain current: -4A
на замовлення 3364 шт:
термін постачання 21-30 дні (днів)
Кількість Ціна
8+59.59 грн
10+47.32 грн
40+40.14 грн
100+35.51 грн
200+32.37 грн
250+31.30 грн
500+28.41 грн
1000+27.91 грн
Мінімальне замовлення: 8
В кошику  од. на суму  грн.
DMC4029SSD-13 pVersion=0046&contRep=ZT&docId=005056AB752F1ED6879B5B084B72B1BF&compId=DMC4029SSD-13.pdf?ci_sign=e2277353b6106028baf363f0021aed1255723ec1
DMC4029SSD-13
Виробник: DIODES INCORPORATED
Category: Multi channel transistors
Description: Transistor: N/P-MOSFET; unipolar; complementary pair; 40/-40V
Case: SO8
Mounting: SMD
Kind of package: 13 inch reel; tape
Kind of channel: enhancement
Type of transistor: N/P-MOSFET
Polarisation: unipolar
On-state resistance: 0.024/0.045Ω
Power dissipation: 1.3W
Drain current: 6.5/-9A
Gate-source voltage: ±20V
Drain-source voltage: 40/-40V
Kind of transistor: complementary pair
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DMC4028SSD-13 pVersion=0046&contRep=ZT&docId=005056AB752F1ED6879B4F4F6FE5F1BF&compId=DMC4028SSD-13.pdf?ci_sign=4bd5ae437f532333a0613bd45d05f0e7500330ff
DMC4028SSD-13
Виробник: DIODES INCORPORATED
Category: Multi channel transistors
Description: Transistor: N/P-MOSFET; unipolar; complementary pair; 40/-40V
Case: SO8
Mounting: SMD
Kind of package: 13 inch reel; tape
Kind of channel: enhancement
Type of transistor: N/P-MOSFET
Polarisation: unipolar
On-state resistance: 0.028/0.05Ω
Power dissipation: 1.8W
Drain current: 5.5/-4.2A
Gate-source voltage: ±20V
Drain-source voltage: 40/-40V
Kind of transistor: complementary pair
товару немає в наявності
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DMG3414U-7 DMG3414U.pdf
DMG3414U-7
Виробник: DIODES INCORPORATED
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 20V; 3.2A; 0.78W; SOT23
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 20V
Drain current: 3.2A
Power dissipation: 0.78W
Case: SOT23
Gate-source voltage: ±8V
On-state resistance: 37mΩ
Mounting: SMD
Kind of package: 7 inch reel; tape
Kind of channel: enhancement
на замовлення 1894 шт:
термін постачання 21-30 дні (днів)
Кількість Ціна
13+35.58 грн
18+23.70 грн
25+18.42 грн
100+12.64 грн
150+11.64 грн
500+9.66 грн
750+9.33 грн
1000+9.08 грн
Мінімальне замовлення: 13
В кошику  од. на суму  грн.
DMG3414UQ-13 DMG3414UQ.pdf
DMG3414UQ-13
Виробник: DIODES INCORPORATED
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 20V; 3.2A; Idm: 30A; 780mW; SOT23
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 20V
Drain current: 3.2A
Pulsed drain current: 30A
Power dissipation: 0.78W
Case: SOT23
Gate-source voltage: ±8V
On-state resistance: 37mΩ
Mounting: SMD
Gate charge: 9.6nC
Kind of package: 13 inch reel; tape
Kind of channel: enhancement
Application: automotive industry
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DMG3414UQ-7 DMG3414UQ.pdf
DMG3414UQ-7
Виробник: DIODES INCORPORATED
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 20V; 3.2A; Idm: 30A; 780mW; SOT23
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 20V
Drain current: 3.2A
Pulsed drain current: 30A
Power dissipation: 0.78W
Case: SOT23
Gate-source voltage: ±8V
On-state resistance: 37mΩ
Mounting: SMD
Gate charge: 9.6nC
Kind of package: 7 inch reel; tape
Kind of channel: enhancement
Application: automotive industry
товару немає в наявності
В кошику  од. на суму  грн.
D12V0H1U2LP1610-7 D12V0H1U2LP1610.pdf
Виробник: DIODES INCORPORATED
Category: Unidirectional TVS SMD diodes
Description: Diode: TVS; 1kW; 13V; 50A; unidirectional; reel,tape; Case: 0201
Mounting: SMD
Kind of package: reel; tape
Type of diode: TVS
Leakage current: 0.1µA
Max. off-state voltage: 12V
Breakdown voltage: 13V
Max. forward impulse current: 50A
Peak pulse power dissipation: 1kW
Case - inch: 0201
Case - mm: 0603
Semiconductor structure: unidirectional
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В кошику  од. на суму  грн.
74AHC1G02W5-7 pVersion=0046&contRep=ZT&docId=005056AB281E1EDDA4E70B30D02720D3&compId=74AHC1G02.pdf?ci_sign=53e23c7a4d759144f00c71ab61d7bb4183447f88
74AHC1G02W5-7
Виробник: DIODES INCORPORATED
Category: Gates, inverters
Description: IC: digital; NOR; Ch: 1; IN: 2; CMOS; SMD; SOT25; 2÷5.5VDC; -40÷150°C
Type of integrated circuit: digital
Kind of gate: NOR
Number of channels: 1
Number of inputs: 2
Technology: CMOS
Mounting: SMD
Case: SOT25
Supply voltage: 2...5.5V DC
Operating temperature: -40...150°C
Kind of package: reel; tape
Family: AHC
Kind of output: push-pull
Kind of input: with Schmitt trigger
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BAV170Q-7-F ds30234.pdf
Виробник: DIODES INCORPORATED
Category: SMD universal diodes
Description: Diode: switching; SMD; 85V; 0.215A; 3us; SOT23; Ufmax: 1.25V; Ifsm: 4A
Type of diode: switching
Mounting: SMD
Max. off-state voltage: 85V
Load current: 0.215A
Reverse recovery time: 3µs
Semiconductor structure: common cathode; double
Case: SOT23
Max. forward voltage: 1.25V
Max. forward impulse current: 4A
Kind of package: reel; tape
Features of semiconductor devices: small signal
Application: automotive industry
Max. load current: 0.5A
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D28V0H1U2P5Q-13 D28V0H1U2P5Q.pdf
Виробник: DIODES INCORPORATED
Category: Unidirectional TVS SMD diodes
Description: Diode: TVS; 1.8kW; 31V; 41A; unidirectional; PowerDI®5; reel,tape
Mounting: SMD
Kind of package: reel; tape
Semiconductor structure: unidirectional
Type of diode: TVS
Leakage current: 0.1µA
Max. off-state voltage: 28V
Breakdown voltage: 31V
Max. forward impulse current: 41A
Peak pulse power dissipation: 1.8kW
Case: PowerDI®5
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В кошику  од. на суму  грн.
DCX123JU-7-F DCX_XXXX_U.pdf
DCX123JU-7-F
Виробник: DIODES INCORPORATED
Category: Complementary transistors
Description: Transistor: NPN / PNP; bipolar; BRT,complementary pair; 50V; 0.1A
Type of transistor: NPN / PNP
Polarisation: bipolar
Collector-emitter voltage: 50V
Collector current: 0.1A
Power dissipation: 0.2W
Case: SOT363
Mounting: SMD
Quantity in set/package: 3000pcs.
Kind of package: reel; tape
Frequency: 250MHz
Kind of transistor: BRT; complementary pair
Base resistor: 2.2kΩ
Base-emitter resistor: 47kΩ
на замовлення 923 шт:
термін постачання 21-30 дні (днів)
Кількість Ціна
34+13.34 грн
48+8.75 грн
55+7.60 грн
100+4.96 грн
500+3.83 грн
Мінімальне замовлення: 34
В кошику  од. на суму  грн.
ZXTP23140BFHTA ZXTP23140BFH.pdf
Виробник: DIODES INCORPORATED
Category: PNP SMD transistors
Description: Transistor: PNP; bipolar; 140V; 2.5A; 1.25W; SOT23
Type of transistor: PNP
Polarisation: bipolar
Collector-emitter voltage: 140V
Collector current: 2.5A
Power dissipation: 1.25W
Case: SOT23
Pulsed collector current: 5A
Mounting: SMD
Quantity in set/package: 3000pcs.
Kind of package: reel; tape
Frequency: 130MHz
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В кошику  од. на суму  грн.
AP2166SG-13 AP2166_76.pdf
AP2166SG-13
Виробник: DIODES INCORPORATED
Category: Power switches - integrated circuits
Description: IC: power switch; high-side,USB switch; 1A; Ch: 2; P-Channel; SMD
Type of integrated circuit: power switch
Mounting: SMD
Supply voltage: 2.7...5.5V DC
Number of channels: 2
Case: SO8
Kind of output: P-Channel
Output current: 1A
On-state resistance: 0.1Ω
Kind of integrated circuit: high-side; USB switch
Kind of package: reel; tape
Active logical level: low
на замовлення 1640 шт:
термін постачання 21-30 дні (днів)
Кількість Ціна
9+52.48 грн
13+34.36 грн
25+31.05 грн
75+27.91 грн
100+27.25 грн
250+25.44 грн
500+24.45 грн
Мінімальне замовлення: 9
В кошику  од. на суму  грн.
AP2331FJ-7 AP2331.pdf
Виробник: DIODES INCORPORATED
Category: Power switches - integrated circuits
Description: IC: power switch; high-side; 0.2A; Ch: 1; SMD; U-DFN2020-3
Type of integrated circuit: power switch
Kind of integrated circuit: high-side
Output current: 0.2A
Number of channels: 1
Mounting: SMD
Case: U-DFN2020-3
On-state resistance: 0.25Ω
Kind of package: reel; tape
Supply voltage: 2.7...5.2V DC
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AP2331TDSA-7 AP2331TD.pdf
AP2331TDSA-7
Виробник: DIODES INCORPORATED
Category: Power switches - integrated circuits
Description: IC: power switch; high-side; 0.2A; Ch: 1; SMD; SOT23; reel,tape
Type of integrated circuit: power switch
Kind of integrated circuit: high-side
Output current: 0.2A
Number of channels: 1
Mounting: SMD
Case: SOT23
On-state resistance: 0.25Ω
Kind of package: reel; tape
Supply voltage: 2.7...5.2V DC
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В кошику  од. на суму  грн.
DMN3030LSS-13 DMN3030LSS.pdf
DMN3030LSS-13
Виробник: DIODES INCORPORATED
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 30V; 6.75A; Idm: 40A; 2.5W; SO8
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 30V
Drain current: 6.75A
Pulsed drain current: 40A
Power dissipation: 2.5W
Case: SO8
Gate-source voltage: ±25V
On-state resistance: 30mΩ
Mounting: SMD
Gate charge: 25nC
Kind of package: 13 inch reel; tape
Kind of channel: enhancement
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AP2191DWG-7 pVersion=0046&contRep=ZT&docId=005056AB82531EE98AA36303EDF3F8BF&compId=AP2181_91.pdf?ci_sign=d341c3865dd0b7568f70f5682e699bac0286fffc
AP2191DWG-7
Виробник: DIODES INCORPORATED
Category: Power switches - integrated circuits
Description: IC: power switch; high-side,USB switch; 1.5A; Ch: 1; P-Channel; SMD
Type of integrated circuit: power switch
Kind of integrated circuit: high-side; USB switch
Output current: 1.5A
Number of channels: 1
Kind of output: P-Channel
Mounting: SMD
Case: SOT25
On-state resistance: 95mΩ
Kind of package: reel; tape
Supply voltage: 2.7...5.5V DC
Active logical level: high
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AP2191AW-7 AP2181A-91A.pdf
AP2191AW-7
Виробник: DIODES INCORPORATED
Category: Power switches - integrated circuits
Description: IC: power switch; high-side,USB switch; 1.5A; Ch: 1; P-Channel; SMD
Type of integrated circuit: power switch
Kind of integrated circuit: high-side; USB switch
Output current: 1.5A
Number of channels: 1
Kind of output: P-Channel
Mounting: SMD
Case: SOT25
On-state resistance: 95mΩ
Kind of package: reel; tape
Supply voltage: 2.7...5.5V DC
Active logical level: high
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AP2191SG-13 AP2181_91.pdf
AP2191SG-13
Виробник: DIODES INCORPORATED
Category: Power switches - integrated circuits
Description: IC: power switch; high-side,USB switch; 1.5A; Ch: 1; P-Channel; SMD
Type of integrated circuit: power switch
Kind of integrated circuit: high-side; USB switch
Output current: 1.5A
Number of channels: 1
Kind of output: P-Channel
Mounting: SMD
Case: SO8
On-state resistance: 95mΩ
Kind of package: reel; tape
Supply voltage: 2.7...5.5V DC
Active logical level: high
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AP2191WG-7 pVersion=0046&contRep=ZT&docId=005056AB82531EE98AA36303EDF3F8BF&compId=AP2181_91.pdf?ci_sign=d341c3865dd0b7568f70f5682e699bac0286fffc
AP2191WG-7
Виробник: DIODES INCORPORATED
Category: Power switches - integrated circuits
Description: IC: power switch; high-side,USB switch; 1.5A; Ch: 1; P-Channel; SMD
Type of integrated circuit: power switch
Kind of integrated circuit: high-side; USB switch
Output current: 1.5A
Number of channels: 1
Kind of output: P-Channel
Mounting: SMD
Case: SOT25
On-state resistance: 95mΩ
Kind of package: reel; tape
Supply voltage: 2.7...5.5V DC
Active logical level: high
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AP2191DFMG-7 AP2181D_91D.pdf
Виробник: DIODES INCORPORATED
Category: Power switches - integrated circuits
Description: IC: power switch; high-side,USB switch; 1.5A; Ch: 1; P-Channel; SMD
Type of integrated circuit: power switch
Kind of integrated circuit: high-side; USB switch
Output current: 1.5A
Number of channels: 1
Kind of output: P-Channel
Mounting: SMD
Case: U-DFN2018-6
On-state resistance: 90mΩ
Kind of package: reel; tape
Supply voltage: 2.7...5.5V DC
Active logical level: high
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В кошику  од. на суму  грн.
AP2191DSG-13-82
Виробник: DIODES INCORPORATED
Category: Power switches - integrated circuits
Description: IC: power switch; high-side,USB switch; 1.5A; Ch: 1; P-Channel; SMD
Type of integrated circuit: power switch
Kind of integrated circuit: high-side; USB switch
Output current: 1.5A
Number of channels: 1
Kind of output: P-Channel
Mounting: SMD
Case: SO8-W
On-state resistance: 90mΩ
Supply voltage: 2.7...5.5V DC
Active logical level: high
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AP2191FMG-7 AP2181_91.pdf
Виробник: DIODES INCORPORATED
Category: Power switches - integrated circuits
Description: IC: power switch; high-side,USB switch; 1.5A; Ch: 1; P-Channel; SMD
Type of integrated circuit: power switch
Kind of integrated circuit: high-side; USB switch
Output current: 1.5A
Number of channels: 1
Kind of output: P-Channel
Mounting: SMD
Case: U-DFN2018-6
On-state resistance: 95mΩ
Kind of package: reel; tape
Supply voltage: 2.7...5.5V DC
Active logical level: high
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B240-13-F B220A_B260A.pdf
B240-13-F
Виробник: DIODES INCORPORATED
Category: SMD Schottky diodes
Description: Diode: Schottky rectifying; SMB; SMD; 40V; 2A; reel,tape
Type of diode: Schottky rectifying
Max. off-state voltage: 40V
Semiconductor structure: single diode
Case: SMB
Mounting: SMD
Kind of package: reel; tape
Capacitance: 200pF
Max. forward voltage: 0.5V
Load current: 2A
Max. forward impulse current: 50A
на замовлення 4407 шт:
термін постачання 21-30 дні (днів)
Кількість Ціна
23+19.57 грн
31+13.54 грн
34+12.39 грн
100+8.82 грн
500+6.75 грн
1000+5.92 грн
3000+4.71 грн
Мінімальне замовлення: 23
В кошику  од. на суму  грн.
B240S1F-7 B240S1F.pdf
B240S1F-7
Виробник: DIODES INCORPORATED
Category: SMD Schottky diodes
Description: Diode: Schottky rectifying; SOD123F; SMD; 40V; 2A; reel,tape
Case: SOD123F
Mounting: SMD
Kind of package: reel; tape
Max. forward impulse current: 50A
Max. off-state voltage: 40V
Type of diode: Schottky rectifying
Semiconductor structure: single diode
Capacitance: 0.1nF
Leakage current: 12.6mA
Load current: 2A
Max. forward voltage: 0.5V
на замовлення 2170 шт:
термін постачання 21-30 дні (днів)
Кількість Ціна
30+15.12 грн
40+10.57 грн
100+7.54 грн
500+5.82 грн
1000+5.17 грн
Мінімальне замовлення: 30
В кошику  од. на суму  грн.
B240Q-13-F B220_A-B260_A.pdf
Виробник: DIODES INCORPORATED
Category: SMD Schottky diodes
Description: Diode: Schottky rectifying; SMB; SMD; 40V; 2A; reel,tape
Application: automotive industry
Case: SMB
Mounting: SMD
Type of diode: Schottky rectifying
Semiconductor structure: single diode
Capacitance: 200pF
Leakage current: 20mA
Max. forward voltage: 0.5V
Load current: 2A
Max. off-state voltage: 40V
Max. forward impulse current: 50A
Kind of package: reel; tape
товару немає в наявності
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ZXMS82120S14PQ-13 ZXMS82120S14PQ.pdf
Виробник: DIODES INCORPORATED
Category: Power switches - integrated circuits
Description: IC: power switch
Type of integrated circuit: power switch
на замовлення 2500 шт:
термін постачання 21-30 дні (днів)
Кількість Ціна
2500+85.38 грн
Мінімальне замовлення: 2500
В кошику  од. на суму  грн.
DXTN22040CFGQ-7 DXTN22040CFGQ.pdf
Виробник: DIODES INCORPORATED
Category: NPN SMD transistors
Description: Transistor: NPN
Type of transistor: NPN
на замовлення 2000 шт:
термін постачання 21-30 дні (днів)
Кількість Ціна
2000+17.17 грн
Мінімальне замовлення: 2000
В кошику  од. на суму  грн.
DXTN22040DFGQ-7 DXTN22040DFGQ.pdf
Виробник: DIODES INCORPORATED
Category: NPN SMD transistors
Description: Transistor: NPN
Type of transistor: NPN
на замовлення 2000 шт:
термін постачання 21-30 дні (днів)
Кількість Ціна
2000+17.17 грн
Мінімальне замовлення: 2000
В кошику  од. на суму  грн.
DXTP22040CFGQ-7 DXTP22040CFGQ.pdf
Виробник: DIODES INCORPORATED
Category: PNP SMD transistors
Description: Transistor: PNP
Type of transistor: PNP
на замовлення 2000 шт:
термін постачання 21-30 дні (днів)
Кількість Ціна
2000+17.17 грн
Мінімальне замовлення: 2000
В кошику  од. на суму  грн.
DXTP22040DFGQ-7 DXTP22040DFGQ.pdf
Виробник: DIODES INCORPORATED
Category: PNP SMD transistors
Description: Transistor: PNP
Type of transistor: PNP
на замовлення 2000 шт:
термін постачання 21-30 дні (днів)
Кількість Ціна
2000+17.17 грн
Мінімальне замовлення: 2000
В кошику  од. на суму  грн.
AZ23C8V2-7-F pVersion=0046&contRep=ZT&docId=005056AB0ED61ED8B7A017D94BAE6143&compId=AZ23C_ser.pdf?ci_sign=f8289f634af17fc3dccb307520c64a27b76de4d8
AZ23C8V2-7-F
Виробник: DIODES INCORPORATED
Category: SMD Zener diodes
Description: Diode: Zener; 0.3W; 8.2V; SMD; reel,tape; SOT23
Type of diode: Zener
Power dissipation: 0.3W
Zener voltage: 8.2V
Mounting: SMD
Tolerance: ±5%
Kind of package: reel; tape
Case: SOT23
Semiconductor structure: common anode; double
на замовлення 4980 шт:
термін постачання 21-30 дні (днів)
Кількість Ціна
36+12.45 грн
45+9.25 грн
54+7.76 грн
108+3.84 грн
500+2.97 грн
3000+2.71 грн
Мінімальне замовлення: 36
В кошику  од. на суму  грн.
BZT52C8V2-7-F pVersion=0046&contRep=ZT&docId=005056AB752F1ED7BED5211ADD746A18&compId=BZT52Cxx_ser.pdf?ci_sign=95d454b64d194db3b460a4ff8a5c90b54420aea6
BZT52C8V2-7-F
Виробник: DIODES INCORPORATED
Category: SMD Zener diodes
Description: Diode: Zener; 0.37W; 8.2V; SMD; reel,tape; SOD123; single diode
Type of diode: Zener
Power dissipation: 0.37W
Zener voltage: 8.2V
Mounting: SMD
Tolerance: ±6%
Kind of package: reel; tape
Case: SOD123
Semiconductor structure: single diode
на замовлення 7660 шт:
термін постачання 21-30 дні (днів)
Кількість Ціна
63+7.12 грн
87+4.79 грн
112+3.70 грн
170+2.44 грн
1600+1.46 грн
3000+1.38 грн
6000+1.33 грн
Мінімальне замовлення: 63
В кошику  од. на суму  грн.
DZ23C8V2-7-F DZ23C2V7-DZ23C51.pdf
Виробник: DIODES INCORPORATED
Category: SMD Zener diodes
Description: Diode: Zener; 0.3W; 8.2V; SMD; reel,tape; SOT23
Type of diode: Zener
Power dissipation: 0.3W
Zener voltage: 8.2V
Mounting: SMD
Kind of package: reel; tape
Case: SOT23
Semiconductor structure: common cathode; double
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BZT52C8V2Q-7-F ds18004.pdf
Виробник: DIODES INCORPORATED
Category: SMD Zener diodes
Description: Diode: Zener; 0.37W; 8.2V; SMD; reel,tape; SOD123; single diode
Type of diode: Zener
Power dissipation: 0.37W
Zener voltage: 8.2V
Mounting: SMD
Tolerance: ±6%
Kind of package: reel; tape
Case: SOD123
Semiconductor structure: single diode
Application: automotive industry
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MBRB20200CT-13 MBRB20200CT.pdf
Виробник: DIODES INCORPORATED
Category: SMD Schottky diodes
Description: Diode: Schottky rectifying; D2PAK; SMD; 200V; 10Ax2; reel,tape
Type of diode: Schottky rectifying
Case: D2PAK
Mounting: SMD
Max. off-state voltage: 200V
Load current: 10A x2
Semiconductor structure: common cathode; double
Max. forward voltage: 0.89V
Leakage current: 10mA
Max. forward impulse current: 170A
Kind of package: reel; tape
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MBRD20200CT-13 MBRD20200CT.pdf
Виробник: DIODES INCORPORATED
Category: SMD Schottky diodes
Description: Diode: Schottky rectifying; DPAK; SMD; 200V; 10Ax2; reel,tape
Type of diode: Schottky rectifying
Mounting: SMD
Max. off-state voltage: 200V
Load current: 10A x2
Semiconductor structure: common cathode; double
Case: DPAK
Max. forward voltage: 0.9V
Max. forward impulse current: 150A
Kind of package: reel; tape
Leakage current: 1mA
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DSS5320T-7 DSS5320T.pdf
Виробник: DIODES INCORPORATED
Category: PNP SMD transistors
Description: Transistor: PNP; bipolar; 20V; 2A; 600mW; SOT23
Mounting: SMD
Type of transistor: PNP
Power dissipation: 0.6W
Case: SOT23
Collector current: 2A
Pulsed collector current: 5A
Collector-emitter voltage: 20V
Current gain: 100...220
Quantity in set/package: 3000pcs.
Polarisation: bipolar
Frequency: 100...180MHz
Kind of package: reel; tape
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B330A-13-F pVersion=0046&contRep=ZT&docId=005056AB752F1EE584EA383D53230469&compId=B320A-13-F.pdf?ci_sign=edde656f9367791a6672056dbd13e96b0d748afe
B330A-13-F
Виробник: DIODES INCORPORATED
Category: SMD Schottky diodes
Description: Diode: Schottky rectifying; SMA; SMD; 30V; 3A; reel,tape; 850mW
Power dissipation: 0.85W
Case: SMA
Mounting: SMD
Kind of package: reel; tape
Type of diode: Schottky rectifying
Semiconductor structure: single diode
Capacitance: 200pF
Max. forward voltage: 0.5V
Load current: 3A
Max. off-state voltage: 30V
Max. forward impulse current: 80A
на замовлення 2289 шт:
термін постачання 21-30 дні (днів)
Кількість Ціна
16+29.35 грн
21+20.32 грн
25+17.76 грн
100+14.29 грн
250+12.47 грн
500+11.31 грн
1000+10.24 грн
2000+9.25 грн
Мінімальне замовлення: 16
В кошику  од. на суму  грн.
B330-13-F b320-360.pdf
B330-13-F
Виробник: DIODES INCORPORATED
Category: SMD Schottky diodes
Description: Diode: Schottky rectifying; SMC; SMD; 30V; 3A; reel,tape
Type of diode: Schottky rectifying
Max. off-state voltage: 30V
Semiconductor structure: single diode
Case: SMC
Mounting: SMD
Kind of package: reel; tape
Capacitance: 200pF
Max. forward voltage: 0.5V
Load current: 3A
Max. forward impulse current: 100A
на замовлення 2592 шт:
термін постачання 21-30 дні (днів)
Кількість Ціна
12+37.36 грн
15+27.75 грн
17+24.94 грн
100+17.10 грн
250+14.70 грн
500+13.21 грн
1000+11.73 грн
Мінімальне замовлення: 12
В кошику  од. на суму  грн.
ZXMN2F34FHTA pVersion=0046&contRep=ZT&docId=005056AB82531EE986CBF247D42A18BF&compId=ZXMN2F34FH.pdf?ci_sign=799affe8426fd8dcc5d6bb0a5196f1cffc52a0d7
ZXMN2F34FHTA
Виробник: DIODES INCORPORATED
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 20V; 2.9A; 0.95W; SOT23
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 20V
Drain current: 2.9A
Power dissipation: 0.95W
Case: SOT23
Gate-source voltage: ±12V
On-state resistance: 0.12Ω
Mounting: SMD
Kind of package: reel; tape
Kind of channel: enhancement
на замовлення 738 шт:
термін постачання 21-30 дні (днів)
Кількість Ціна
20+22.24 грн
28+15.20 грн
32+13.13 грн
50+10.41 грн
Мінімальне замовлення: 20
В кошику  од. на суму  грн.
ABS210-13 ABS210.pdf
Виробник: DIODES INCORPORATED
Category: SMD/THT sing. phase diode bridge rectif.
Description: Bridge rectifier: single-phase; Urmax: 1kV; If: 2A; Ifsm: 60A; SOPA4
Type of bridge rectifier: single-phase
Max. off-state voltage: 1kV
Load current: 2A
Max. forward impulse current: 60A
Case: SOPA4
Electrical mounting: SMT
Max. forward voltage: 1.1V
Leads: soldering pads
Max. load current: 2A
на замовлення 20000 шт:
термін постачання 21-30 дні (днів)
Кількість Ціна
5000+7.38 грн
Мінімальне замовлення: 5000
В кошику  од. на суму  грн.
SMCJ16AQ-13-F SMCJ5.0CAQ_SMCJ110CAQ.pdf
Виробник: DIODES INCORPORATED
Category: Unidirectional TVS SMD diodes
Description: Diode: TVS; 1.5kW; 17.8÷19.7V; 57.7A; unidirectional; SMC
Type of diode: TVS
Peak pulse power dissipation: 1.5kW
Max. off-state voltage: 16V
Breakdown voltage: 17.8...19.7V
Max. forward impulse current: 57.7A
Semiconductor structure: unidirectional
Case: SMC
Mounting: SMD
Leakage current: 5µA
Kind of package: reel; tape
Features of semiconductor devices: glass passivated
Application: automotive industry
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SMAJ100A-13-F pVersion=0046&contRep=ZT&docId=005056AB281E1EDCB5D5D61A59AC00D2&compId=SMAJ_ser.pdf?ci_sign=97d7e07ffaac288e0eb21ce6c5e39913c3418386
SMAJ100A-13-F
Виробник: DIODES INCORPORATED
Category: Unidirectional TVS SMD diodes
Description: Diode: TVS; 0.4kW; 111÷123V; 2.5A; unidirectional; SMA; reel,tape
Type of diode: TVS
Peak pulse power dissipation: 0.4kW
Max. off-state voltage: 100V
Breakdown voltage: 111...123V
Max. forward impulse current: 2.5A
Semiconductor structure: unidirectional
Case: SMA
Mounting: SMD
Leakage current: 5µA
Features of semiconductor devices: glass passivated
Kind of package: reel; tape
на замовлення 1907 шт:
термін постачання 21-30 дні (днів)
Кількість Ціна
25+17.79 грн
30+13.87 грн
36+11.48 грн
100+4.34 грн
Мінімальне замовлення: 25
В кошику  од. на суму  грн.
SMAJ100CA-13-F pVersion=0046&contRep=ZT&docId=005056AB281E1EDCB5D5D61A59AC00D2&compId=SMAJ_ser.pdf?ci_sign=97d7e07ffaac288e0eb21ce6c5e39913c3418386
SMAJ100CA-13-F
Виробник: DIODES INCORPORATED
Category: Bidirectional TVS SMD diodes
Description: Diode: TVS; 0.4kW; 111÷123V; 2.5A; bidirectional; SMA; reel,tape
Type of diode: TVS
Peak pulse power dissipation: 0.4kW
Max. off-state voltage: 100V
Breakdown voltage: 111...123V
Max. forward impulse current: 2.5A
Semiconductor structure: bidirectional
Case: SMA
Mounting: SMD
Leakage current: 5µA
Features of semiconductor devices: glass passivated
Kind of package: reel; tape
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SBR10A45SP5-13 SBR10A45SP5.pdf
Виробник: DIODES INCORPORATED
Category: SMD Schottky diodes
Description: Diode: Schottky rectifying; PowerDI®5; SBR®; SMD; 45V; 10A
Mounting: SMD
Case: PowerDI®5
Type of diode: Schottky rectifying
Technology: SBR®
Leakage current: 0.4mA
Max. forward voltage: 0.53V
Load current: 10A
Max. off-state voltage: 45V
Max. forward impulse current: 180A
Kind of package: reel; tape
Semiconductor structure: single diode
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DMN1004UFV-13 DMN1004UFV.pdf
Виробник: DIODES INCORPORATED
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 12V; 50A; Idm: 80A; 1.9W
On-state resistance: 5.1mΩ
Power dissipation: 1.9W
Gate-source voltage: ±8V
Kind of package: 13 inch reel; tape
Kind of channel: enhancement
Type of transistor: N-MOSFET
Case: PowerDI3333-8
Mounting: SMD
Polarisation: unipolar
Pulsed drain current: 80A
Drain current: 50A
Drain-source voltage: 12V
Gate charge: 47nC
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DMP2010UFV-13 DMP2010UFV.pdf
Виробник: DIODES INCORPORATED
Category: SMD P channel transistors
Description: Transistor: P-MOSFET; unipolar; -20V; -40A; Idm: -80A; 2W
On-state resistance: 12.5mΩ
Power dissipation: 2W
Gate-source voltage: ±10V
Kind of package: 13 inch reel; tape
Kind of channel: enhancement
Type of transistor: P-MOSFET
Case: PowerDI3333-8
Mounting: SMD
Polarisation: unipolar
Pulsed drain current: -80A
Drain current: -40A
Drain-source voltage: -20V
Gate charge: 103nC
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DMP3013SFV-13 DMP3013SFV.pdf
Виробник: DIODES INCORPORATED
Category: SMD P channel transistors
Description: Transistor: P-MOSFET; unipolar; -30V; -10A; Idm: -80A; 1.94W
On-state resistance: 17mΩ
Power dissipation: 1.94W
Gate-source voltage: ±25V
Kind of package: 13 inch reel; tape
Kind of channel: enhancement
Type of transistor: P-MOSFET
Case: PowerDI3333-8
Mounting: SMD
Polarisation: unipolar
Pulsed drain current: -80A
Drain current: -10A
Drain-source voltage: -30V
Gate charge: 33.7nC
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DMP3018SFV-13 DMP3018SFV.pdf
Виробник: DIODES INCORPORATED
Category: SMD P channel transistors
Description: Transistor: P-MOSFET; unipolar; -30V; -9A; Idm: -70A; 1.9W
Type of transistor: P-MOSFET
Polarisation: unipolar
Drain-source voltage: -30V
Drain current: -9A
Pulsed drain current: -70A
Power dissipation: 1.9W
Case: PowerDI3333-8
Gate-source voltage: ±25V
On-state resistance: 21mΩ
Mounting: SMD
Gate charge: 51nC
Kind of package: 13 inch reel; tape
Kind of channel: enhancement
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DMP3036SFV-13 DMP3036SFV.pdf
Виробник: DIODES INCORPORATED
Category: SMD P channel transistors
Description: Transistor: P-MOSFET; unipolar; -30V; -7A; Idm: -80A; 2.3W
On-state resistance: 29mΩ
Power dissipation: 2.3W
Gate-source voltage: ±25V
Kind of package: 13 inch reel; tape
Kind of channel: enhancement
Type of transistor: P-MOSFET
Case: PowerDI3333-8
Mounting: SMD
Polarisation: unipolar
Pulsed drain current: -80A
Drain current: -7A
Drain-source voltage: -30V
Gate charge: 16.5nC
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DMT2004UFV-13 DMT2004UFV.pdf
Виробник: DIODES INCORPORATED
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 24V; 55A; Idm: 90A; 2.3W
Case: PowerDI3333-8
Mounting: SMD
Drain-source voltage: 24V
Pulsed drain current: 90A
Drain current: 55A
Gate charge: 53.7nC
On-state resistance: 10mΩ
Power dissipation: 2.3W
Gate-source voltage: ±12V
Kind of package: 13 inch reel; tape
Kind of channel: enhancement
Type of transistor: N-MOSFET
Polarisation: unipolar
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DMT35M7LFV-13
Виробник: DIODES INCORPORATED
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 30V; 61A; Idm: 90A; 1.98W
On-state resistance: 8.5mΩ
Power dissipation: 1.98W
Gate-source voltage: ±20V
Kind of package: 13 inch reel; tape
Kind of channel: enhancement
Type of transistor: N-MOSFET
Case: PowerDI3333-8
Mounting: SMD
Polarisation: unipolar
Pulsed drain current: 90A
Drain current: 61A
Drain-source voltage: 30V
Gate charge: 36nC
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DMT69M8LFV-13 DMT69M8LFV.pdf
Виробник: DIODES INCORPORATED
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 60V; 8.9A; Idm: 60A; 2.2W
On-state resistance: 13.3mΩ
Power dissipation: 2.2W
Gate-source voltage: ±16V
Kind of package: 13 inch reel; tape
Kind of channel: enhancement
Type of transistor: N-MOSFET
Case: PowerDI3333-8
Mounting: SMD
Polarisation: unipolar
Pulsed drain current: 60A
Drain current: 8.9A
Drain-source voltage: 60V
Gate charge: 33.5nC
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DMMT5551S-7-F pVersion=0046&contRep=ZT&docId=005056AB82531EE986AC5E03E61C78BF&compId=DMMT5551.pdf?ci_sign=f60cd0e5a12f975d11403171edbc245cb1734cb2
DMMT5551S-7-F
Виробник: DIODES INCORPORATED
Category: NPN SMD transistors
Description: Transistor: NPN x2; bipolar; 160V; 0.2A; 300mW; SOT26
Type of transistor: NPN x2
Polarisation: bipolar
Collector-emitter voltage: 160V
Collector current: 0.2A
Power dissipation: 0.3W
Case: SOT26
Current gain: 50...250
Mounting: SMD
Quantity in set/package: 3000pcs.
Kind of package: reel; tape
Frequency: 100...300MHz
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