Продукція > DIODES INCORPORATED > Всі товари виробника DIODES INCORPORATED (74565) > Сторінка 1219 з 1243
Фото | Назва | Виробник | Інформація |
Доступність |
Ціна |
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AH3360-Z-7 | DIODES INCORPORATED |
![]() Description: Sensor: Hall Type of sensor: Hall |
на замовлення 3000 шт: термін постачання 21-30 дні (днів) |
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AH3363Q-SA-7 | DIODES INCORPORATED |
![]() Description: Sensor: Hall Type of sensor: Hall |
на замовлення 6000 шт: термін постачання 21-30 дні (днів) |
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AH3360-FA-7 | DIODES INCORPORATED |
![]() Description: Sensor: Hall Type of sensor: Hall |
на замовлення 3000 шт: термін постачання 21-30 дні (днів) |
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DMG2301L-7 | DIODES INCORPORATED |
![]() Description: Transistor: P-MOSFET; 20V; 3A; 1.5W; SOT23 Type of transistor: P-MOSFET Technology: MOSFET Drain-source voltage: 20V Drain current: 3A Power dissipation: 1.5W Case: SOT23 Gate-source voltage: 8V On-state resistance: 0.12Ω Mounting: SMD Gate charge: 5.5nC Kind of channel: enhancement |
на замовлення 57000 шт: термін постачання 21-30 дні (днів) |
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MBR230S1F-7 | DIODES INCORPORATED |
![]() Description: Diode: Schottky rectifying; SOD123F; SMD; 30V; 2A; reel,tape Type of diode: Schottky rectifying Case: SOD123F Mounting: SMD Max. off-state voltage: 30V Load current: 2A Semiconductor structure: single diode Max. forward voltage: 0.42V Max. forward impulse current: 30A Kind of package: reel; tape |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||||||||
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BAV756DW-7-F | DIODES INCORPORATED |
![]() Description: Diode: switching; SMD; 75V; 0.15A; 4ns; SOT363; Ufmax: 1.25V; Ifsm: 2A Type of diode: switching Mounting: SMD Max. off-state voltage: 75V Load current: 0.15A Reverse recovery time: 4ns Semiconductor structure: common anode; common cathode; double x2 Features of semiconductor devices: small signal Case: SOT363 Max. forward voltage: 1.25V Max. forward impulse current: 2A Kind of package: reel; tape Capacitance: 2pF Max. load current: 0.3A |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||||||||
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ZVN3320FTA | DIODES INCORPORATED |
![]() Description: Transistor: N-MOSFET; unipolar; 200V; 0.06A; 0.33W; SOT23 Type of transistor: N-MOSFET Polarisation: unipolar Drain-source voltage: 200V Drain current: 60mA Power dissipation: 0.33W Case: SOT23 Gate-source voltage: ±20V On-state resistance: 25Ω Mounting: SMD Kind of package: reel; tape Kind of channel: enhancement |
на замовлення 3000 шт: термін постачання 21-30 дні (днів) |
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FZT458TA | DIODES INCORPORATED |
![]() Description: Transistor: NPN; bipolar; 400V; 0.3A; 2W; SOT223 Type of transistor: NPN Polarisation: bipolar Collector-emitter voltage: 400V Collector current: 0.3A Power dissipation: 2W Case: SOT223 Current gain: 100...300 Mounting: SMD Quantity in set/package: 1000pcs. Kind of package: reel; tape Frequency: 50MHz |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||||||||
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FCX458TA | DIODES INCORPORATED |
![]() Description: Transistor: NPN; bipolar; 400V; 0.225A; 700mW; SOT89 Type of transistor: NPN Polarisation: bipolar Collector-emitter voltage: 400V Collector current: 0.225A Power dissipation: 0.7W Case: SOT89 Mounting: SMD Kind of package: reel; tape Current gain: 15...300 Frequency: 50MHz Quantity in set/package: 1000pcs. |
на замовлення 250 шт: термін постачання 21-30 дні (днів) |
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DMTH4007LK3-13 | DIODES INCORPORATED |
![]() Description: Transistor: N-MOSFET; unipolar; 40V; 44A; Idm: 80A; 59W; TO252 Mounting: SMD Case: TO252 Type of transistor: N-MOSFET Polarisation: unipolar Gate charge: 29.1nC On-state resistance: 7.3mΩ Power dissipation: 59W Drain current: 44A Gate-source voltage: ±20V Drain-source voltage: 40V Pulsed drain current: 80A Kind of package: 13 inch reel; tape Kind of channel: enhancement |
товару немає в наявності |
В кошику од. на суму грн. | |||||||||||||||
DMTH4007LPS-13 | DIODES INCORPORATED |
![]() Description: Transistor: N-MOSFET; unipolar; 40V; 85A; Idm: 340A; 83.3W Mounting: SMD Case: PowerDI5060-8 Type of transistor: N-MOSFET Polarisation: unipolar Gate charge: 29.1nC On-state resistance: 6.5mΩ Power dissipation: 83.3W Drain current: 85A Gate-source voltage: ±20V Drain-source voltage: 40V Pulsed drain current: 340A Kind of package: 13 inch reel; tape Kind of channel: enhancement |
товару немає в наявності |
В кошику од. на суму грн. | |||||||||||||||
DMTH4007SPD-13 | DIODES INCORPORATED |
![]() Description: Transistor: N-MOSFET; unipolar; 40V; 11.9A; Idm: 90A; 2.6W Mounting: SMD Case: PowerDI5060-8 Type of transistor: N-MOSFET Polarisation: unipolar Gate charge: 41.9nC On-state resistance: 8.6mΩ Power dissipation: 2.6W Drain current: 11.9A Gate-source voltage: ±20V Drain-source voltage: 40V Pulsed drain current: 90A Kind of package: 13 inch reel; tape Kind of channel: enhancement |
товару немає в наявності |
В кошику од. на суму грн. | |||||||||||||||
DMTH4007SPS-13 | DIODES INCORPORATED |
![]() Description: Transistor: N-MOSFET; unipolar; 40V; 13.1A; Idm: 200A; 2.8W Mounting: SMD Case: PowerDI5060-8 Type of transistor: N-MOSFET Polarisation: unipolar Gate charge: 41.9nC On-state resistance: 7.6mΩ Power dissipation: 2.8W Drain current: 13.1A Gate-source voltage: ±20V Drain-source voltage: 40V Pulsed drain current: 200A Kind of package: 13 inch reel; tape Kind of channel: enhancement |
товару немає в наявності |
В кошику од. на суму грн. | |||||||||||||||
DMTH4007LPSQ-13 | DIODES INCORPORATED |
![]() Description: Transistor: N-MOSFET; unipolar; 40V; 11A; Idm: 340A; 2.7W Mounting: SMD Case: PowerDI5060-8 Application: automotive industry Type of transistor: N-MOSFET Polarisation: unipolar Gate charge: 29.1nC On-state resistance: 9.8mΩ Power dissipation: 2.7W Drain current: 11A Gate-source voltage: ±20V Drain-source voltage: 40V Pulsed drain current: 340A Kind of package: 13 inch reel; tape Kind of channel: enhancement |
товару немає в наявності |
В кошику од. на суму грн. | |||||||||||||||
DMTH4007LK3Q-13 | DIODES INCORPORATED |
![]() Description: Transistor: N-MOSFET; unipolar; 40V; 13.9A; Idm: 80A; 2.6W; TO252 Mounting: SMD Case: TO252 Application: automotive industry Type of transistor: N-MOSFET Polarisation: unipolar Gate charge: 29.1nC On-state resistance: 9.8mΩ Power dissipation: 2.6W Drain current: 13.9A Gate-source voltage: ±20V Drain-source voltage: 40V Pulsed drain current: 80A Kind of package: 13 inch reel; tape Kind of channel: enhancement |
товару немає в наявності |
В кошику од. на суму грн. | |||||||||||||||
DMTH4007SPDQ-13 | DIODES INCORPORATED |
![]() Description: Transistor: N-MOSFET; unipolar; 40V; 11.9A; Idm: 90A; 2.6W Mounting: SMD Case: PowerDI5060-8 Application: automotive industry Type of transistor: N-MOSFET Polarisation: unipolar Gate charge: 41.9nC On-state resistance: 8.6mΩ Power dissipation: 2.6W Drain current: 11.9A Gate-source voltage: ±20V Drain-source voltage: 40V Pulsed drain current: 90A Kind of package: 13 inch reel; tape Kind of channel: enhancement |
товару немає в наявності |
В кошику од. на суму грн. | |||||||||||||||
DFLR1400-7 | DIODES INCORPORATED |
![]() Description: Diode: rectifying Type of diode: rectifying |
на замовлення 27000 шт: термін постачання 21-30 дні (днів) |
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DMTH4007SPSQ-13 | DIODES INCORPORATED |
![]() Description: Transistor: N-MOSFET Type of transistor: N-MOSFET |
на замовлення 2500 шт: термін постачання 21-30 дні (днів) |
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BAW156Q-13-F | DIODES INCORPORATED |
![]() Description: Diode: switching; SMD; 85V; 0.16A; 3us; SOT23; Ufmax: 1.25V; Ifsm: 4A Type of diode: switching Mounting: SMD Max. off-state voltage: 85V Load current: 0.16A Reverse recovery time: 3µs Semiconductor structure: common anode; double Capacitance: 3pF Case: SOT23 Max. forward voltage: 1.25V Max. forward impulse current: 4A Kind of package: reel; tape Application: automotive industry Max. load current: 0.5A Features of semiconductor devices: small signal |
на замовлення 6708 шт: термін постачання 21-30 дні (днів) |
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BAW156TQ-7-F | DIODES INCORPORATED |
![]() Description: Diode: switching; SMD; 85V; 0.215A; 3us; SOT523; reel,tape Type of diode: switching Mounting: SMD Max. off-state voltage: 85V Load current: 0.215A Reverse recovery time: 3µs Semiconductor structure: common anode; double Case: SOT523 Kind of package: reel; tape Application: automotive industry Features of semiconductor devices: small signal |
на замовлення 3000 шт: термін постачання 21-30 дні (днів) |
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FES1GE | DIODES INCORPORATED |
![]() Description: Diode: rectifying Type of diode: rectifying |
на замовлення 10000 шт: термін постачання 21-30 дні (днів) |
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DML3008LFDS-7 | DIODES INCORPORATED |
![]() Description: IC: power switch Type of integrated circuit: power switch |
на замовлення 3000 шт: термін постачання 21-30 дні (днів) |
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74AHCT1G32QW5-7 | DIODES INCORPORATED |
![]() Description: IC: digital Type of integrated circuit: digital |
на замовлення 3000 шт: термін постачання 21-30 дні (днів) |
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DMP3015LSS-13 | DIODES INCORPORATED |
![]() Description: Transistor: P-MOSFET; unipolar; -30V; -9.75A; Idm: -45A; 2.5W; SO8 Type of transistor: P-MOSFET Polarisation: unipolar Drain-source voltage: -30V Drain current: -9.75A Pulsed drain current: -45A Power dissipation: 2.5W Case: SO8 Gate-source voltage: ±20V On-state resistance: 17mΩ Mounting: SMD Kind of package: 13 inch reel; tape Kind of channel: enhancement Gate charge: 60.4nC |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||||||||
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DMP3015LSSQ-13 | DIODES INCORPORATED |
![]() Description: Transistor: P-MOSFET; unipolar; -30V; -9.75A; Idm: -45A; 2.5W; SO8 Type of transistor: P-MOSFET Polarisation: unipolar Drain-source voltage: -30V Drain current: -9.75A Pulsed drain current: -45A Power dissipation: 2.5W Case: SO8 Gate-source voltage: ±20V On-state resistance: 17mΩ Mounting: SMD Kind of package: 13 inch reel; tape Kind of channel: enhancement Gate charge: 60.4nC Application: automotive industry |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||||||||
ZXTN25020DGTA | DIODES INCORPORATED |
![]() Description: Transistor: NPN Type of transistor: NPN |
на замовлення 1000 шт: термін постачання 21-30 дні (днів) |
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ZXTP25020DGTA | DIODES INCORPORATED |
![]() Description: Transistor: PNP Type of transistor: PNP |
на замовлення 1000 шт: термін постачання 21-30 дні (днів) |
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P4SMAJ15ADF-13 | DIODES INCORPORATED |
![]() Description: Diode: TVS Type of diode: TVS |
на замовлення 10000 шт: термін постачання 21-30 дні (днів) |
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DFLR1600-7 | DIODES INCORPORATED |
![]() Description: Diode: rectifying; SMD; 600V; 1A; PowerDI®123; Ufmax: 1.1V; Ifsm: 25A Mounting: SMD Features of semiconductor devices: glass passivated Semiconductor structure: single diode Type of diode: rectifying Load current: 1A Max. forward impulse current: 25A Max. forward voltage: 1.1V Max. off-state voltage: 0.6kV Kind of package: reel; tape Case: PowerDI®123 |
на замовлення 7052 шт: термін постачання 21-30 дні (днів) |
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BC846BLP4-7B | DIODES INCORPORATED |
![]() Description: Transistor: NPN; bipolar; 65V; 0.1A; 1W; X2-DFN1006-3 Type of transistor: NPN Polarisation: bipolar Collector-emitter voltage: 65V Collector current: 0.1A Power dissipation: 1W Case: X2-DFN1006-3 Current gain: 200...450 Mounting: SMD Kind of package: reel; tape Frequency: 100...300MHz Pulsed collector current: 0.2A Quantity in set/package: 10000pcs. |
товару немає в наявності |
В кошику од. на суму грн. | |||||||||||||||
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DDZ9691-7 | DIODES INCORPORATED |
![]() Description: Diode: Zener; 0.5W; 6.2V; SMD; reel,tape; SOD123; single diode Type of diode: Zener Power dissipation: 0.5W Zener voltage: 6.2V Kind of package: reel; tape Case: SOD123 Mounting: SMD Tolerance: ±5% Semiconductor structure: single diode |
на замовлення 1157 шт: термін постачання 21-30 дні (днів) |
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MMSZ5242B-7-F | DIODES INCORPORATED |
![]() Description: Diode: Zener; 0.37/0.5W; 12V; SMD; reel,tape; SOD123; single diode Type of diode: Zener Power dissipation: 0.37/0.5W Zener voltage: 12V Mounting: SMD Tolerance: ±5% Kind of package: reel; tape Case: SOD123 Semiconductor structure: single diode |
на замовлення 64 шт: термін постачання 21-30 дні (днів) |
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MMSZ5242BS-7-F | DIODES INCORPORATED |
![]() Description: Diode: Zener; 0.2W; 12V; SMD; reel,tape; SOD323; single diode Type of diode: Zener Power dissipation: 0.2W Zener voltage: 12V Mounting: SMD Tolerance: ±5% Kind of package: reel; tape Case: SOD323 Semiconductor structure: single diode |
на замовлення 2296 шт: термін постачання 21-30 дні (днів) |
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MMSZ5242BQ-7-F | DIODES INCORPORATED |
![]() Description: Diode: Zener; 0.37/0.5W; 12V; SMD; reel,tape; SOD123; single diode Type of diode: Zener Power dissipation: 0.37/0.5W Zener voltage: 12V Mounting: SMD Tolerance: ±5% Kind of package: reel; tape Case: SOD123 Semiconductor structure: single diode Application: automotive industry |
товару немає в наявності |
В кошику од. на суму грн. | |||||||||||||||
MMSZ5242BQ-13-F | DIODES INCORPORATED |
Category: SMD Zener diodes Description: Diode: Zener Type of diode: Zener |
на замовлення 10000 шт: термін постачання 21-30 дні (днів) |
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SMAJ15CAQ-13-F | DIODES INCORPORATED |
![]() Description: Diode: TVS; 0.4kW; 16.7÷18.5V; 16.4A; bidirectional; SMA; reel,tape Type of diode: TVS Peak pulse power dissipation: 0.4kW Max. off-state voltage: 15V Breakdown voltage: 16.7...18.5V Max. forward impulse current: 16.4A Semiconductor structure: bidirectional Case: SMA Mounting: SMD Leakage current: 5µA Application: automotive industry Features of semiconductor devices: glass passivated Kind of package: reel; tape |
товару немає в наявності |
В кошику од. на суму грн. | |||||||||||||||
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DDTC143ZCA-7-F | DIODES INCORPORATED |
![]() Description: Transistor: NPN; bipolar; BRT; 50V; 0.1A; 200mW; SOT23; R1: 4.7kΩ Type of transistor: NPN Polarisation: bipolar Kind of transistor: BRT Collector-emitter voltage: 50V Collector current: 0.1A Power dissipation: 0.2W Case: SOT23 Mounting: SMD Kind of package: reel; tape Frequency: 250MHz Base resistor: 4.7kΩ Base-emitter resistor: 47kΩ Quantity in set/package: 3000pcs. |
на замовлення 198 шт: термін постачання 21-30 дні (днів) |
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DDTC143ZUA-7-F | DIODES INCORPORATED |
![]() Description: Transistor: NPN; bipolar; BRT; 50V; 0.1A; 200mW; SOT323; R1: 4.7kΩ Type of transistor: NPN Polarisation: bipolar Kind of transistor: BRT Collector-emitter voltage: 50V Collector current: 0.1A Power dissipation: 0.2W Case: SOT323 Mounting: SMD Kind of package: reel; tape Frequency: 250MHz Base resistor: 4.7kΩ Base-emitter resistor: 47kΩ Quantity in set/package: 3000pcs. |
на замовлення 1290 шт: термін постачання 21-30 дні (днів) |
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DF01M | DIODES INCORPORATED |
![]() Description: Bridge rectifier: single-phase; Urmax: 100V; If: 1A; Ifsm: 50A; DFM Type of bridge rectifier: single-phase Max. off-state voltage: 100V Load current: 1A Max. forward impulse current: 50A Case: DFM Electrical mounting: THT Kind of package: tube Max. forward voltage: 1.1V Features of semiconductor devices: glass passivated |
на замовлення 203 шт: термін постачання 21-30 дні (днів) |
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DF02M | DIODES INCORPORATED |
![]() Description: Bridge rectifier: single-phase; Urmax: 200V; If: 1A; Ifsm: 50A; DFM Type of bridge rectifier: single-phase Max. off-state voltage: 200V Load current: 1A Max. forward impulse current: 50A Case: DFM Electrical mounting: THT Kind of package: tube Max. forward voltage: 1.1V Features of semiconductor devices: glass passivated |
на замовлення 264 шт: термін постачання 21-30 дні (днів) |
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TB0900H-13-F | DIODES INCORPORATED |
![]() Description: Thyristor: TSS; Urmax: 75V; SMB; SMD; reel,tape; 100A; bidirectional Type of thyristor: TSS Max. off-state voltage: 75V Case: SMB Mounting: SMD Kind of package: reel; tape Max. forward impulse current: 100A Semiconductor structure: bidirectional Breakover voltage: 98V |
товару немає в наявності |
В кошику од. на суму грн. | |||||||||||||||
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ZXMN2A03E6TA | DIODES INCORPORATED |
![]() Description: Transistor: N-MOSFET; unipolar; 20V; 3.4A; 1.1W; SOT26 Type of transistor: N-MOSFET Polarisation: unipolar Drain-source voltage: 20V Drain current: 3.4A Power dissipation: 1.1W Case: SOT26 Gate-source voltage: ±12V On-state resistance: 0.1Ω Mounting: SMD Kind of package: reel; tape Kind of channel: enhancement |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||||||||
DMT12H065LFDF-13 | DIODES INCORPORATED |
![]() Description: Transistor: N-MOSFET; unipolar; 115V; 3.4A; Idm: 25A; 1.2W Type of transistor: N-MOSFET Polarisation: unipolar Drain-source voltage: 115V Drain current: 3.4A Power dissipation: 1.2W Case: U-DFN2020-6 Gate-source voltage: ±12V On-state resistance: 0.35Ω Mounting: SMD Kind of package: 13 inch reel; tape Kind of channel: enhancement Gate charge: 5.5nC Pulsed drain current: 25A |
товару немає в наявності |
В кошику од. на суму грн. | |||||||||||||||
DDTD113EC-7-F | DIODES INCORPORATED |
![]() Description: Transistor: NPN; bipolar; BRT; 50V; 0.5A; 200mW; SOT23; R1: 1kΩ Mounting: SMD Type of transistor: NPN Collector current: 0.5A Power dissipation: 0.2W Current gain: 33 Collector-emitter voltage: 50V Quantity in set/package: 3000pcs. Base resistor: 1kΩ Base-emitter resistor: 1kΩ Kind of package: reel; tape Frequency: 200MHz Polarisation: bipolar Kind of transistor: BRT Case: SOT23 |
товару немає в наявності |
В кошику од. на суму грн. | |||||||||||||||
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DMN6068SE-13 | DIODES INCORPORATED |
![]() Description: Transistor: N-MOSFET; unipolar; 60V; 4.5A; 2W; SOT223 Type of transistor: N-MOSFET Polarisation: unipolar Drain-source voltage: 60V Drain current: 4.5A Power dissipation: 2W Case: SOT223 Gate-source voltage: ±20V On-state resistance: 0.1Ω Mounting: SMD Kind of package: 13 inch reel; tape Kind of channel: enhancement |
на замовлення 2553 шт: термін постачання 21-30 дні (днів) |
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DMN2020LSN-7 | DIODES INCORPORATED |
![]() Description: Transistor: N-MOSFET; unipolar; 20V; 4.5A; Idm: 30A; 0.61W; SC59; ESD Type of transistor: N-MOSFET Polarisation: unipolar Drain-source voltage: 20V Drain current: 4.5A Pulsed drain current: 30A Power dissipation: 0.61W Case: SC59 Gate-source voltage: ±12V On-state resistance: 20mΩ Mounting: SMD Kind of package: 7 inch reel; tape Kind of channel: enhancement Version: ESD |
на замовлення 1316 шт: термін постачання 21-30 дні (днів) |
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ZXTN25020DFHTA | DIODES INCORPORATED |
![]() Description: Transistor: NPN; bipolar; 20V; 4.5A; 1.25W; SOT23 Type of transistor: NPN Polarisation: bipolar Collector-emitter voltage: 20V Collector current: 4.5A Power dissipation: 1.25W Case: SOT23 Mounting: SMD Quantity in set/package: 3000pcs. Kind of package: reel; tape Frequency: 215MHz |
на замовлення 2862 шт: термін постачання 21-30 дні (днів) |
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DFLS1100Q-7 | DIODES INCORPORATED |
![]() Description: Diode: Schottky rectifying; PowerDI®123; SMD; 100V; 1A; reel,tape Type of diode: Schottky rectifying Case: PowerDI®123 Mounting: SMD Max. off-state voltage: 100V Load current: 1A Semiconductor structure: single diode Capacitance: 36pF Max. forward voltage: 0.86V Leakage current: 0.35mA Max. forward impulse current: 50A Kind of package: reel; tape Application: automotive industry |
товару немає в наявності |
В кошику од. на суму грн. | |||||||||||||||
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BZT52C6V8-7-F | DIODES INCORPORATED |
![]() Description: Diode: Zener; 0.37W; 6.8V; SMD; reel,tape; SOD123; single diode Type of diode: Zener Power dissipation: 0.37W Zener voltage: 6.8V Mounting: SMD Tolerance: ±6% Kind of package: reel; tape Case: SOD123 Semiconductor structure: single diode |
на замовлення 833 шт: термін постачання 21-30 дні (днів) |
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BZT52C6V2-7-F | DIODES INCORPORATED |
![]() Description: Diode: Zener; 0.37W; 6.2V; SMD; reel,tape; SOD123; single diode Type of diode: Zener Power dissipation: 0.37W Zener voltage: 6.2V Mounting: SMD Tolerance: ±6.5% Kind of package: reel; tape Case: SOD123 Semiconductor structure: single diode |
на замовлення 2254 шт: термін постачання 21-30 дні (днів) |
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BZT52C6V8T-7 | DIODES INCORPORATED |
![]() Description: Diode: Zener; 0.3W; 6.8V; SMD; reel,tape; SOD523; single diode Type of diode: Zener Power dissipation: 0.3W Zener voltage: 6.8V Mounting: SMD Tolerance: ±6% Kind of package: reel; tape Case: SOD523 Semiconductor structure: single diode |
на замовлення 5800 шт: термін постачання 21-30 дні (днів) |
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BZT52C6V2LP-7 | DIODES INCORPORATED |
![]() Description: Diode: Zener; 0.25W; 6.2V; SMD; reel,tape; X1-DFN1006-2 Type of diode: Zener Power dissipation: 0.25W Zener voltage: 6.2V Mounting: SMD Tolerance: ±6.5% Kind of package: reel; tape Case: X1-DFN1006-2 Semiconductor structure: single diode |
на замовлення 1980 шт: термін постачання 21-30 дні (днів) |
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BZT52C6V8S-7-F | DIODES INCORPORATED |
![]() Description: Diode: Zener; 0.2W; 6.8V; SMD; reel,tape; SOD323; single diode Type of diode: Zener Power dissipation: 0.2W Zener voltage: 6.8V Mounting: SMD Tolerance: ±6% Kind of package: reel; tape Case: SOD323 Semiconductor structure: single diode |
на замовлення 1970 шт: термін постачання 21-30 дні (днів) |
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BZT52C6V2-13-F | DIODES INCORPORATED |
![]() Description: Diode: Zener; 0.37W; 6.2V; SMD; reel,tape; SOD123; single diode Type of diode: Zener Power dissipation: 0.37W Zener voltage: 6.2V Mounting: SMD Tolerance: ±6% Kind of package: reel; tape Case: SOD123 Semiconductor structure: single diode |
на замовлення 1190 шт: термін постачання 21-30 дні (днів) |
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BZT52C6V2TQ-13-F | DIODES INCORPORATED |
![]() Description: Diode: Zener; 0.3W; 6.2V; SMD; reel,tape; SOD523; single diode Type of diode: Zener Power dissipation: 0.3W Zener voltage: 6.2V Mounting: SMD Tolerance: ±6% Kind of package: reel; tape Case: SOD523 Semiconductor structure: single diode Application: automotive industry |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||||||||
BZT52C6V8Q-7-F | DIODES INCORPORATED |
![]() Description: Diode: Zener; 0.37W; 6.8V; SMD; reel,tape; SOD123; single diode Type of diode: Zener Power dissipation: 0.37W Zener voltage: 6.8V Mounting: SMD Tolerance: ±6% Kind of package: reel; tape Case: SOD123 Semiconductor structure: single diode Application: automotive industry |
товару немає в наявності |
В кошику од. на суму грн. | |||||||||||||||
BZT52C6V2Q-7-F | DIODES INCORPORATED |
![]() Description: Diode: Zener; 0.37W; 6.2V; SMD; reel,tape; SOD123; single diode Type of diode: Zener Power dissipation: 0.37W Zener voltage: 6.2V Mounting: SMD Tolerance: ±6.5% Kind of package: reel; tape Case: SOD123 Semiconductor structure: single diode Application: automotive industry |
товару немає в наявності |
В кошику од. на суму грн. | |||||||||||||||
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BZT52C6V2SQ-7-F | DIODES INCORPORATED |
![]() Description: Diode: Zener; 0.2W; 6.2V; SMD; reel,tape; SOD323; single diode Type of diode: Zener Power dissipation: 0.2W Zener voltage: 6.2V Mounting: SMD Tolerance: ±6% Kind of package: reel; tape Case: SOD323 Semiconductor structure: single diode Application: automotive industry |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||||||||
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BZT52C6V2T-7 | DIODES INCORPORATED |
![]() Description: Diode: Zener; 0.3W; 6.2V; SMD; reel,tape; SOD523; single diode Type of diode: Zener Power dissipation: 0.3W Zener voltage: 6.2V Mounting: SMD Tolerance: ±6.5% Kind of package: reel; tape Case: SOD523 Semiconductor structure: single diode |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||||||||
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AP7380-50W5-7 | DIODES INCORPORATED |
![]() Description: IC: voltage regulator; LDO,linear,fixed; 5V; 0.15A; SOT25; SMD Type of integrated circuit: voltage regulator Kind of voltage regulator: fixed; LDO; linear Voltage drop: 1.5V Output voltage: 5V Output current: 0.15A Case: SOT25 Mounting: SMD Manufacturer series: AP7380 Kind of package: reel; tape Operating temperature: -40...125°C Tolerance: ±1% Number of channels: 1 Input voltage: 3.5...24V Integrated circuit features: shutdown mode control input |
на замовлення 2995 шт: термін постачання 21-30 дні (днів) |
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AH3360-Z-7 |
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на замовлення 3000 шт:
термін постачання 21-30 дні (днів)Кількість | Ціна |
---|---|
3000+ | 18.84 грн |
AH3363Q-SA-7 |
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на замовлення 6000 шт:
термін постачання 21-30 дні (днів)Кількість | Ціна |
---|---|
3000+ | 33.00 грн |
AH3360-FA-7 |
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на замовлення 3000 шт:
термін постачання 21-30 дні (днів)Кількість | Ціна |
---|---|
3000+ | 18.08 грн |
DMG2301L-7 |
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Виробник: DIODES INCORPORATED
Category: SMD P channel transistors
Description: Transistor: P-MOSFET; 20V; 3A; 1.5W; SOT23
Type of transistor: P-MOSFET
Technology: MOSFET
Drain-source voltage: 20V
Drain current: 3A
Power dissipation: 1.5W
Case: SOT23
Gate-source voltage: 8V
On-state resistance: 0.12Ω
Mounting: SMD
Gate charge: 5.5nC
Kind of channel: enhancement
Category: SMD P channel transistors
Description: Transistor: P-MOSFET; 20V; 3A; 1.5W; SOT23
Type of transistor: P-MOSFET
Technology: MOSFET
Drain-source voltage: 20V
Drain current: 3A
Power dissipation: 1.5W
Case: SOT23
Gate-source voltage: 8V
On-state resistance: 0.12Ω
Mounting: SMD
Gate charge: 5.5nC
Kind of channel: enhancement
на замовлення 57000 шт:
термін постачання 21-30 дні (днів)Кількість | Ціна |
---|---|
3000+ | 2.72 грн |
MBR230S1F-7 |
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Виробник: DIODES INCORPORATED
Category: SMD Schottky diodes
Description: Diode: Schottky rectifying; SOD123F; SMD; 30V; 2A; reel,tape
Type of diode: Schottky rectifying
Case: SOD123F
Mounting: SMD
Max. off-state voltage: 30V
Load current: 2A
Semiconductor structure: single diode
Max. forward voltage: 0.42V
Max. forward impulse current: 30A
Kind of package: reel; tape
Category: SMD Schottky diodes
Description: Diode: Schottky rectifying; SOD123F; SMD; 30V; 2A; reel,tape
Type of diode: Schottky rectifying
Case: SOD123F
Mounting: SMD
Max. off-state voltage: 30V
Load current: 2A
Semiconductor structure: single diode
Max. forward voltage: 0.42V
Max. forward impulse current: 30A
Kind of package: reel; tape
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В кошику
од. на суму грн.
BAV756DW-7-F |
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Виробник: DIODES INCORPORATED
Category: SMD universal diodes
Description: Diode: switching; SMD; 75V; 0.15A; 4ns; SOT363; Ufmax: 1.25V; Ifsm: 2A
Type of diode: switching
Mounting: SMD
Max. off-state voltage: 75V
Load current: 0.15A
Reverse recovery time: 4ns
Semiconductor structure: common anode; common cathode; double x2
Features of semiconductor devices: small signal
Case: SOT363
Max. forward voltage: 1.25V
Max. forward impulse current: 2A
Kind of package: reel; tape
Capacitance: 2pF
Max. load current: 0.3A
Category: SMD universal diodes
Description: Diode: switching; SMD; 75V; 0.15A; 4ns; SOT363; Ufmax: 1.25V; Ifsm: 2A
Type of diode: switching
Mounting: SMD
Max. off-state voltage: 75V
Load current: 0.15A
Reverse recovery time: 4ns
Semiconductor structure: common anode; common cathode; double x2
Features of semiconductor devices: small signal
Case: SOT363
Max. forward voltage: 1.25V
Max. forward impulse current: 2A
Kind of package: reel; tape
Capacitance: 2pF
Max. load current: 0.3A
товару немає в наявності
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од. на суму грн.
ZVN3320FTA |
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Виробник: DIODES INCORPORATED
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 200V; 0.06A; 0.33W; SOT23
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 200V
Drain current: 60mA
Power dissipation: 0.33W
Case: SOT23
Gate-source voltage: ±20V
On-state resistance: 25Ω
Mounting: SMD
Kind of package: reel; tape
Kind of channel: enhancement
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 200V; 0.06A; 0.33W; SOT23
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 200V
Drain current: 60mA
Power dissipation: 0.33W
Case: SOT23
Gate-source voltage: ±20V
On-state resistance: 25Ω
Mounting: SMD
Kind of package: reel; tape
Kind of channel: enhancement
на замовлення 3000 шт:
термін постачання 21-30 дні (днів)Кількість | Ціна |
---|---|
20+ | 22.17 грн |
26+ | 15.76 грн |
50+ | 13.06 грн |
100+ | 11.95 грн |
120+ | 7.76 грн |
330+ | 7.36 грн |
FZT458TA |
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Виробник: DIODES INCORPORATED
Category: NPN SMD transistors
Description: Transistor: NPN; bipolar; 400V; 0.3A; 2W; SOT223
Type of transistor: NPN
Polarisation: bipolar
Collector-emitter voltage: 400V
Collector current: 0.3A
Power dissipation: 2W
Case: SOT223
Current gain: 100...300
Mounting: SMD
Quantity in set/package: 1000pcs.
Kind of package: reel; tape
Frequency: 50MHz
Category: NPN SMD transistors
Description: Transistor: NPN; bipolar; 400V; 0.3A; 2W; SOT223
Type of transistor: NPN
Polarisation: bipolar
Collector-emitter voltage: 400V
Collector current: 0.3A
Power dissipation: 2W
Case: SOT223
Current gain: 100...300
Mounting: SMD
Quantity in set/package: 1000pcs.
Kind of package: reel; tape
Frequency: 50MHz
товару немає в наявності
В кошику
од. на суму грн.
FCX458TA |
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Виробник: DIODES INCORPORATED
Category: NPN SMD transistors
Description: Transistor: NPN; bipolar; 400V; 0.225A; 700mW; SOT89
Type of transistor: NPN
Polarisation: bipolar
Collector-emitter voltage: 400V
Collector current: 0.225A
Power dissipation: 0.7W
Case: SOT89
Mounting: SMD
Kind of package: reel; tape
Current gain: 15...300
Frequency: 50MHz
Quantity in set/package: 1000pcs.
Category: NPN SMD transistors
Description: Transistor: NPN; bipolar; 400V; 0.225A; 700mW; SOT89
Type of transistor: NPN
Polarisation: bipolar
Collector-emitter voltage: 400V
Collector current: 0.225A
Power dissipation: 0.7W
Case: SOT89
Mounting: SMD
Kind of package: reel; tape
Current gain: 15...300
Frequency: 50MHz
Quantity in set/package: 1000pcs.
на замовлення 250 шт:
термін постачання 21-30 дні (днів)Кількість | Ціна |
---|---|
9+ | 50.30 грн |
15+ | 26.60 грн |
50+ | 20.43 грн |
69+ | 13.62 грн |
188+ | 12.90 грн |
DMTH4007LK3-13 |
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Виробник: DIODES INCORPORATED
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 40V; 44A; Idm: 80A; 59W; TO252
Mounting: SMD
Case: TO252
Type of transistor: N-MOSFET
Polarisation: unipolar
Gate charge: 29.1nC
On-state resistance: 7.3mΩ
Power dissipation: 59W
Drain current: 44A
Gate-source voltage: ±20V
Drain-source voltage: 40V
Pulsed drain current: 80A
Kind of package: 13 inch reel; tape
Kind of channel: enhancement
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 40V; 44A; Idm: 80A; 59W; TO252
Mounting: SMD
Case: TO252
Type of transistor: N-MOSFET
Polarisation: unipolar
Gate charge: 29.1nC
On-state resistance: 7.3mΩ
Power dissipation: 59W
Drain current: 44A
Gate-source voltage: ±20V
Drain-source voltage: 40V
Pulsed drain current: 80A
Kind of package: 13 inch reel; tape
Kind of channel: enhancement
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В кошику
од. на суму грн.
DMTH4007LPS-13 |
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Виробник: DIODES INCORPORATED
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 40V; 85A; Idm: 340A; 83.3W
Mounting: SMD
Case: PowerDI5060-8
Type of transistor: N-MOSFET
Polarisation: unipolar
Gate charge: 29.1nC
On-state resistance: 6.5mΩ
Power dissipation: 83.3W
Drain current: 85A
Gate-source voltage: ±20V
Drain-source voltage: 40V
Pulsed drain current: 340A
Kind of package: 13 inch reel; tape
Kind of channel: enhancement
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 40V; 85A; Idm: 340A; 83.3W
Mounting: SMD
Case: PowerDI5060-8
Type of transistor: N-MOSFET
Polarisation: unipolar
Gate charge: 29.1nC
On-state resistance: 6.5mΩ
Power dissipation: 83.3W
Drain current: 85A
Gate-source voltage: ±20V
Drain-source voltage: 40V
Pulsed drain current: 340A
Kind of package: 13 inch reel; tape
Kind of channel: enhancement
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од. на суму грн.
DMTH4007SPD-13 |
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Виробник: DIODES INCORPORATED
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 40V; 11.9A; Idm: 90A; 2.6W
Mounting: SMD
Case: PowerDI5060-8
Type of transistor: N-MOSFET
Polarisation: unipolar
Gate charge: 41.9nC
On-state resistance: 8.6mΩ
Power dissipation: 2.6W
Drain current: 11.9A
Gate-source voltage: ±20V
Drain-source voltage: 40V
Pulsed drain current: 90A
Kind of package: 13 inch reel; tape
Kind of channel: enhancement
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 40V; 11.9A; Idm: 90A; 2.6W
Mounting: SMD
Case: PowerDI5060-8
Type of transistor: N-MOSFET
Polarisation: unipolar
Gate charge: 41.9nC
On-state resistance: 8.6mΩ
Power dissipation: 2.6W
Drain current: 11.9A
Gate-source voltage: ±20V
Drain-source voltage: 40V
Pulsed drain current: 90A
Kind of package: 13 inch reel; tape
Kind of channel: enhancement
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од. на суму грн.
DMTH4007SPS-13 |
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Виробник: DIODES INCORPORATED
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 40V; 13.1A; Idm: 200A; 2.8W
Mounting: SMD
Case: PowerDI5060-8
Type of transistor: N-MOSFET
Polarisation: unipolar
Gate charge: 41.9nC
On-state resistance: 7.6mΩ
Power dissipation: 2.8W
Drain current: 13.1A
Gate-source voltage: ±20V
Drain-source voltage: 40V
Pulsed drain current: 200A
Kind of package: 13 inch reel; tape
Kind of channel: enhancement
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 40V; 13.1A; Idm: 200A; 2.8W
Mounting: SMD
Case: PowerDI5060-8
Type of transistor: N-MOSFET
Polarisation: unipolar
Gate charge: 41.9nC
On-state resistance: 7.6mΩ
Power dissipation: 2.8W
Drain current: 13.1A
Gate-source voltage: ±20V
Drain-source voltage: 40V
Pulsed drain current: 200A
Kind of package: 13 inch reel; tape
Kind of channel: enhancement
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од. на суму грн.
DMTH4007LPSQ-13 |
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Виробник: DIODES INCORPORATED
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 40V; 11A; Idm: 340A; 2.7W
Mounting: SMD
Case: PowerDI5060-8
Application: automotive industry
Type of transistor: N-MOSFET
Polarisation: unipolar
Gate charge: 29.1nC
On-state resistance: 9.8mΩ
Power dissipation: 2.7W
Drain current: 11A
Gate-source voltage: ±20V
Drain-source voltage: 40V
Pulsed drain current: 340A
Kind of package: 13 inch reel; tape
Kind of channel: enhancement
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 40V; 11A; Idm: 340A; 2.7W
Mounting: SMD
Case: PowerDI5060-8
Application: automotive industry
Type of transistor: N-MOSFET
Polarisation: unipolar
Gate charge: 29.1nC
On-state resistance: 9.8mΩ
Power dissipation: 2.7W
Drain current: 11A
Gate-source voltage: ±20V
Drain-source voltage: 40V
Pulsed drain current: 340A
Kind of package: 13 inch reel; tape
Kind of channel: enhancement
товару немає в наявності
В кошику
од. на суму грн.
DMTH4007LK3Q-13 |
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Виробник: DIODES INCORPORATED
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 40V; 13.9A; Idm: 80A; 2.6W; TO252
Mounting: SMD
Case: TO252
Application: automotive industry
Type of transistor: N-MOSFET
Polarisation: unipolar
Gate charge: 29.1nC
On-state resistance: 9.8mΩ
Power dissipation: 2.6W
Drain current: 13.9A
Gate-source voltage: ±20V
Drain-source voltage: 40V
Pulsed drain current: 80A
Kind of package: 13 inch reel; tape
Kind of channel: enhancement
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 40V; 13.9A; Idm: 80A; 2.6W; TO252
Mounting: SMD
Case: TO252
Application: automotive industry
Type of transistor: N-MOSFET
Polarisation: unipolar
Gate charge: 29.1nC
On-state resistance: 9.8mΩ
Power dissipation: 2.6W
Drain current: 13.9A
Gate-source voltage: ±20V
Drain-source voltage: 40V
Pulsed drain current: 80A
Kind of package: 13 inch reel; tape
Kind of channel: enhancement
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DMTH4007SPDQ-13 |
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Виробник: DIODES INCORPORATED
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 40V; 11.9A; Idm: 90A; 2.6W
Mounting: SMD
Case: PowerDI5060-8
Application: automotive industry
Type of transistor: N-MOSFET
Polarisation: unipolar
Gate charge: 41.9nC
On-state resistance: 8.6mΩ
Power dissipation: 2.6W
Drain current: 11.9A
Gate-source voltage: ±20V
Drain-source voltage: 40V
Pulsed drain current: 90A
Kind of package: 13 inch reel; tape
Kind of channel: enhancement
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 40V; 11.9A; Idm: 90A; 2.6W
Mounting: SMD
Case: PowerDI5060-8
Application: automotive industry
Type of transistor: N-MOSFET
Polarisation: unipolar
Gate charge: 41.9nC
On-state resistance: 8.6mΩ
Power dissipation: 2.6W
Drain current: 11.9A
Gate-source voltage: ±20V
Drain-source voltage: 40V
Pulsed drain current: 90A
Kind of package: 13 inch reel; tape
Kind of channel: enhancement
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од. на суму грн.
DFLR1400-7 |
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Виробник: DIODES INCORPORATED
Category: SMD universal diodes
Description: Diode: rectifying
Type of diode: rectifying
Category: SMD universal diodes
Description: Diode: rectifying
Type of diode: rectifying
на замовлення 27000 шт:
термін постачання 21-30 дні (днів)Кількість | Ціна |
---|---|
3000+ | 4.62 грн |
DMTH4007SPSQ-13 |
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Виробник: DIODES INCORPORATED
Category: SMD N channel transistors
Description: Transistor: N-MOSFET
Type of transistor: N-MOSFET
Category: SMD N channel transistors
Description: Transistor: N-MOSFET
Type of transistor: N-MOSFET
на замовлення 2500 шт:
термін постачання 21-30 дні (днів)Кількість | Ціна |
---|---|
2500+ | 52.01 грн |
BAW156Q-13-F |
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Виробник: DIODES INCORPORATED
Category: SMD universal diodes
Description: Diode: switching; SMD; 85V; 0.16A; 3us; SOT23; Ufmax: 1.25V; Ifsm: 4A
Type of diode: switching
Mounting: SMD
Max. off-state voltage: 85V
Load current: 0.16A
Reverse recovery time: 3µs
Semiconductor structure: common anode; double
Capacitance: 3pF
Case: SOT23
Max. forward voltage: 1.25V
Max. forward impulse current: 4A
Kind of package: reel; tape
Application: automotive industry
Max. load current: 0.5A
Features of semiconductor devices: small signal
Category: SMD universal diodes
Description: Diode: switching; SMD; 85V; 0.16A; 3us; SOT23; Ufmax: 1.25V; Ifsm: 4A
Type of diode: switching
Mounting: SMD
Max. off-state voltage: 85V
Load current: 0.16A
Reverse recovery time: 3µs
Semiconductor structure: common anode; double
Capacitance: 3pF
Case: SOT23
Max. forward voltage: 1.25V
Max. forward impulse current: 4A
Kind of package: reel; tape
Application: automotive industry
Max. load current: 0.5A
Features of semiconductor devices: small signal
на замовлення 6708 шт:
термін постачання 21-30 дні (днів)Кількість | Ціна |
---|---|
136+ | 3.15 грн |
272+ | 1.46 грн |
307+ | 1.29 грн |
741+ | 1.26 грн |
1000+ | 1.16 грн |
3000+ | 1.14 грн |
BAW156TQ-7-F |
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Виробник: DIODES INCORPORATED
Category: SMD universal diodes
Description: Diode: switching; SMD; 85V; 0.215A; 3us; SOT523; reel,tape
Type of diode: switching
Mounting: SMD
Max. off-state voltage: 85V
Load current: 0.215A
Reverse recovery time: 3µs
Semiconductor structure: common anode; double
Case: SOT523
Kind of package: reel; tape
Application: automotive industry
Features of semiconductor devices: small signal
Category: SMD universal diodes
Description: Diode: switching; SMD; 85V; 0.215A; 3us; SOT523; reel,tape
Type of diode: switching
Mounting: SMD
Max. off-state voltage: 85V
Load current: 0.215A
Reverse recovery time: 3µs
Semiconductor structure: common anode; double
Case: SOT523
Kind of package: reel; tape
Application: automotive industry
Features of semiconductor devices: small signal
на замовлення 3000 шт:
термін постачання 21-30 дні (днів)Кількість | Ціна |
---|---|
13+ | 34.10 грн |
19+ | 20.98 грн |
100+ | 10.53 грн |
252+ | 3.72 грн |
692+ | 3.48 грн |
FES1GE |
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Виробник: DIODES INCORPORATED
Category: SMD universal diodes
Description: Diode: rectifying
Type of diode: rectifying
Category: SMD universal diodes
Description: Diode: rectifying
Type of diode: rectifying
на замовлення 10000 шт:
термін постачання 21-30 дні (днів)Кількість | Ціна |
---|---|
10000+ | 3.48 грн |
DML3008LFDS-7 |
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Виробник: DIODES INCORPORATED
Category: Power switches - integrated circuits
Description: IC: power switch
Type of integrated circuit: power switch
Category: Power switches - integrated circuits
Description: IC: power switch
Type of integrated circuit: power switch
на замовлення 3000 шт:
термін постачання 21-30 дні (днів)Кількість | Ціна |
---|---|
3000+ | 50.30 грн |
74AHCT1G32QW5-7 |
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Виробник: DIODES INCORPORATED
Category: Gates, inverters
Description: IC: digital
Type of integrated circuit: digital
Category: Gates, inverters
Description: IC: digital
Type of integrated circuit: digital
на замовлення 3000 шт:
термін постачання 21-30 дні (днів)Кількість | Ціна |
---|---|
3000+ | 4.27 грн |
DMP3015LSS-13 |
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Виробник: DIODES INCORPORATED
Category: SMD P channel transistors
Description: Transistor: P-MOSFET; unipolar; -30V; -9.75A; Idm: -45A; 2.5W; SO8
Type of transistor: P-MOSFET
Polarisation: unipolar
Drain-source voltage: -30V
Drain current: -9.75A
Pulsed drain current: -45A
Power dissipation: 2.5W
Case: SO8
Gate-source voltage: ±20V
On-state resistance: 17mΩ
Mounting: SMD
Kind of package: 13 inch reel; tape
Kind of channel: enhancement
Gate charge: 60.4nC
Category: SMD P channel transistors
Description: Transistor: P-MOSFET; unipolar; -30V; -9.75A; Idm: -45A; 2.5W; SO8
Type of transistor: P-MOSFET
Polarisation: unipolar
Drain-source voltage: -30V
Drain current: -9.75A
Pulsed drain current: -45A
Power dissipation: 2.5W
Case: SO8
Gate-source voltage: ±20V
On-state resistance: 17mΩ
Mounting: SMD
Kind of package: 13 inch reel; tape
Kind of channel: enhancement
Gate charge: 60.4nC
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DMP3015LSSQ-13 |
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Виробник: DIODES INCORPORATED
Category: SMD P channel transistors
Description: Transistor: P-MOSFET; unipolar; -30V; -9.75A; Idm: -45A; 2.5W; SO8
Type of transistor: P-MOSFET
Polarisation: unipolar
Drain-source voltage: -30V
Drain current: -9.75A
Pulsed drain current: -45A
Power dissipation: 2.5W
Case: SO8
Gate-source voltage: ±20V
On-state resistance: 17mΩ
Mounting: SMD
Kind of package: 13 inch reel; tape
Kind of channel: enhancement
Gate charge: 60.4nC
Application: automotive industry
Category: SMD P channel transistors
Description: Transistor: P-MOSFET; unipolar; -30V; -9.75A; Idm: -45A; 2.5W; SO8
Type of transistor: P-MOSFET
Polarisation: unipolar
Drain-source voltage: -30V
Drain current: -9.75A
Pulsed drain current: -45A
Power dissipation: 2.5W
Case: SO8
Gate-source voltage: ±20V
On-state resistance: 17mΩ
Mounting: SMD
Kind of package: 13 inch reel; tape
Kind of channel: enhancement
Gate charge: 60.4nC
Application: automotive industry
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ZXTN25020DGTA |
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Виробник: DIODES INCORPORATED
Category: NPN SMD transistors
Description: Transistor: NPN
Type of transistor: NPN
Category: NPN SMD transistors
Description: Transistor: NPN
Type of transistor: NPN
на замовлення 1000 шт:
термін постачання 21-30 дні (днів)Кількість | Ціна |
---|---|
1000+ | 29.24 грн |
ZXTP25020DGTA |
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Виробник: DIODES INCORPORATED
Category: PNP SMD transistors
Description: Transistor: PNP
Type of transistor: PNP
Category: PNP SMD transistors
Description: Transistor: PNP
Type of transistor: PNP
на замовлення 1000 шт:
термін постачання 21-30 дні (днів)Кількість | Ціна |
---|---|
1000+ | 20.38 грн |
P4SMAJ15ADF-13 |
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Виробник: DIODES INCORPORATED
Category: Unidirectional TVS SMD diodes
Description: Diode: TVS
Type of diode: TVS
Category: Unidirectional TVS SMD diodes
Description: Diode: TVS
Type of diode: TVS
на замовлення 10000 шт:
термін постачання 21-30 дні (днів)Кількість | Ціна |
---|---|
10000+ | 7.50 грн |
DFLR1600-7 |
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Виробник: DIODES INCORPORATED
Category: SMD universal diodes
Description: Diode: rectifying; SMD; 600V; 1A; PowerDI®123; Ufmax: 1.1V; Ifsm: 25A
Mounting: SMD
Features of semiconductor devices: glass passivated
Semiconductor structure: single diode
Type of diode: rectifying
Load current: 1A
Max. forward impulse current: 25A
Max. forward voltage: 1.1V
Max. off-state voltage: 0.6kV
Kind of package: reel; tape
Case: PowerDI®123
Category: SMD universal diodes
Description: Diode: rectifying; SMD; 600V; 1A; PowerDI®123; Ufmax: 1.1V; Ifsm: 25A
Mounting: SMD
Features of semiconductor devices: glass passivated
Semiconductor structure: single diode
Type of diode: rectifying
Load current: 1A
Max. forward impulse current: 25A
Max. forward voltage: 1.1V
Max. off-state voltage: 0.6kV
Kind of package: reel; tape
Case: PowerDI®123
на замовлення 7052 шт:
термін постачання 21-30 дні (днів)Кількість | Ціна |
---|---|
18+ | 23.87 грн |
26+ | 15.60 грн |
100+ | 10.85 грн |
245+ | 3.81 грн |
672+ | 3.60 грн |
BC846BLP4-7B |
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Виробник: DIODES INCORPORATED
Category: NPN SMD transistors
Description: Transistor: NPN; bipolar; 65V; 0.1A; 1W; X2-DFN1006-3
Type of transistor: NPN
Polarisation: bipolar
Collector-emitter voltage: 65V
Collector current: 0.1A
Power dissipation: 1W
Case: X2-DFN1006-3
Current gain: 200...450
Mounting: SMD
Kind of package: reel; tape
Frequency: 100...300MHz
Pulsed collector current: 0.2A
Quantity in set/package: 10000pcs.
Category: NPN SMD transistors
Description: Transistor: NPN; bipolar; 65V; 0.1A; 1W; X2-DFN1006-3
Type of transistor: NPN
Polarisation: bipolar
Collector-emitter voltage: 65V
Collector current: 0.1A
Power dissipation: 1W
Case: X2-DFN1006-3
Current gain: 200...450
Mounting: SMD
Kind of package: reel; tape
Frequency: 100...300MHz
Pulsed collector current: 0.2A
Quantity in set/package: 10000pcs.
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DDZ9691-7 |
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Виробник: DIODES INCORPORATED
Category: SMD Zener diodes
Description: Diode: Zener; 0.5W; 6.2V; SMD; reel,tape; SOD123; single diode
Type of diode: Zener
Power dissipation: 0.5W
Zener voltage: 6.2V
Kind of package: reel; tape
Case: SOD123
Mounting: SMD
Tolerance: ±5%
Semiconductor structure: single diode
Category: SMD Zener diodes
Description: Diode: Zener; 0.5W; 6.2V; SMD; reel,tape; SOD123; single diode
Type of diode: Zener
Power dissipation: 0.5W
Zener voltage: 6.2V
Kind of package: reel; tape
Case: SOD123
Mounting: SMD
Tolerance: ±5%
Semiconductor structure: single diode
на замовлення 1157 шт:
термін постачання 21-30 дні (днів)Кількість | Ціна |
---|---|
46+ | 9.38 грн |
58+ | 6.89 грн |
66+ | 6.02 грн |
100+ | 4.24 грн |
500+ | 3.02 грн |
521+ | 1.79 грн |
MMSZ5242B-7-F |
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Виробник: DIODES INCORPORATED
Category: SMD Zener diodes
Description: Diode: Zener; 0.37/0.5W; 12V; SMD; reel,tape; SOD123; single diode
Type of diode: Zener
Power dissipation: 0.37/0.5W
Zener voltage: 12V
Mounting: SMD
Tolerance: ±5%
Kind of package: reel; tape
Case: SOD123
Semiconductor structure: single diode
Category: SMD Zener diodes
Description: Diode: Zener; 0.37/0.5W; 12V; SMD; reel,tape; SOD123; single diode
Type of diode: Zener
Power dissipation: 0.37/0.5W
Zener voltage: 12V
Mounting: SMD
Tolerance: ±5%
Kind of package: reel; tape
Case: SOD123
Semiconductor structure: single diode
на замовлення 64 шт:
термін постачання 21-30 дні (днів)Кількість | Ціна |
---|---|
56+ | 7.67 грн |
64+ | 6.33 грн |
MMSZ5242BS-7-F |
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Виробник: DIODES INCORPORATED
Category: SMD Zener diodes
Description: Diode: Zener; 0.2W; 12V; SMD; reel,tape; SOD323; single diode
Type of diode: Zener
Power dissipation: 0.2W
Zener voltage: 12V
Mounting: SMD
Tolerance: ±5%
Kind of package: reel; tape
Case: SOD323
Semiconductor structure: single diode
Category: SMD Zener diodes
Description: Diode: Zener; 0.2W; 12V; SMD; reel,tape; SOD323; single diode
Type of diode: Zener
Power dissipation: 0.2W
Zener voltage: 12V
Mounting: SMD
Tolerance: ±5%
Kind of package: reel; tape
Case: SOD323
Semiconductor structure: single diode
на замовлення 2296 шт:
термін постачання 21-30 дні (днів)Кількість | Ціна |
---|---|
59+ | 7.35 грн |
74+ | 5.38 грн |
84+ | 4.75 грн |
136+ | 2.92 грн |
500+ | 2.27 грн |
535+ | 1.74 грн |
1469+ | 1.65 грн |
MMSZ5242BQ-7-F |
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Виробник: DIODES INCORPORATED
Category: SMD Zener diodes
Description: Diode: Zener; 0.37/0.5W; 12V; SMD; reel,tape; SOD123; single diode
Type of diode: Zener
Power dissipation: 0.37/0.5W
Zener voltage: 12V
Mounting: SMD
Tolerance: ±5%
Kind of package: reel; tape
Case: SOD123
Semiconductor structure: single diode
Application: automotive industry
Category: SMD Zener diodes
Description: Diode: Zener; 0.37/0.5W; 12V; SMD; reel,tape; SOD123; single diode
Type of diode: Zener
Power dissipation: 0.37/0.5W
Zener voltage: 12V
Mounting: SMD
Tolerance: ±5%
Kind of package: reel; tape
Case: SOD123
Semiconductor structure: single diode
Application: automotive industry
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MMSZ5242BQ-13-F |
Виробник: DIODES INCORPORATED
Category: SMD Zener diodes
Description: Diode: Zener
Type of diode: Zener
Category: SMD Zener diodes
Description: Diode: Zener
Type of diode: Zener
на замовлення 10000 шт:
термін постачання 21-30 дні (днів)Кількість | Ціна |
---|---|
10000+ | 1.98 грн |
SMAJ15CAQ-13-F |
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Виробник: DIODES INCORPORATED
Category: Bidirectional TVS SMD diodes
Description: Diode: TVS; 0.4kW; 16.7÷18.5V; 16.4A; bidirectional; SMA; reel,tape
Type of diode: TVS
Peak pulse power dissipation: 0.4kW
Max. off-state voltage: 15V
Breakdown voltage: 16.7...18.5V
Max. forward impulse current: 16.4A
Semiconductor structure: bidirectional
Case: SMA
Mounting: SMD
Leakage current: 5µA
Application: automotive industry
Features of semiconductor devices: glass passivated
Kind of package: reel; tape
Category: Bidirectional TVS SMD diodes
Description: Diode: TVS; 0.4kW; 16.7÷18.5V; 16.4A; bidirectional; SMA; reel,tape
Type of diode: TVS
Peak pulse power dissipation: 0.4kW
Max. off-state voltage: 15V
Breakdown voltage: 16.7...18.5V
Max. forward impulse current: 16.4A
Semiconductor structure: bidirectional
Case: SMA
Mounting: SMD
Leakage current: 5µA
Application: automotive industry
Features of semiconductor devices: glass passivated
Kind of package: reel; tape
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DDTC143ZCA-7-F |
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Виробник: DIODES INCORPORATED
Category: NPN SMD transistors
Description: Transistor: NPN; bipolar; BRT; 50V; 0.1A; 200mW; SOT23; R1: 4.7kΩ
Type of transistor: NPN
Polarisation: bipolar
Kind of transistor: BRT
Collector-emitter voltage: 50V
Collector current: 0.1A
Power dissipation: 0.2W
Case: SOT23
Mounting: SMD
Kind of package: reel; tape
Frequency: 250MHz
Base resistor: 4.7kΩ
Base-emitter resistor: 47kΩ
Quantity in set/package: 3000pcs.
Category: NPN SMD transistors
Description: Transistor: NPN; bipolar; BRT; 50V; 0.1A; 200mW; SOT23; R1: 4.7kΩ
Type of transistor: NPN
Polarisation: bipolar
Kind of transistor: BRT
Collector-emitter voltage: 50V
Collector current: 0.1A
Power dissipation: 0.2W
Case: SOT23
Mounting: SMD
Kind of package: reel; tape
Frequency: 250MHz
Base resistor: 4.7kΩ
Base-emitter resistor: 47kΩ
Quantity in set/package: 3000pcs.
на замовлення 198 шт:
термін постачання 21-30 дні (днів)Кількість | Ціна |
---|---|
39+ | 11.08 грн |
46+ | 8.71 грн |
53+ | 7.60 грн |
100+ | 4.23 грн |
DDTC143ZUA-7-F |
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Виробник: DIODES INCORPORATED
Category: NPN SMD transistors
Description: Transistor: NPN; bipolar; BRT; 50V; 0.1A; 200mW; SOT323; R1: 4.7kΩ
Type of transistor: NPN
Polarisation: bipolar
Kind of transistor: BRT
Collector-emitter voltage: 50V
Collector current: 0.1A
Power dissipation: 0.2W
Case: SOT323
Mounting: SMD
Kind of package: reel; tape
Frequency: 250MHz
Base resistor: 4.7kΩ
Base-emitter resistor: 47kΩ
Quantity in set/package: 3000pcs.
Category: NPN SMD transistors
Description: Transistor: NPN; bipolar; BRT; 50V; 0.1A; 200mW; SOT323; R1: 4.7kΩ
Type of transistor: NPN
Polarisation: bipolar
Kind of transistor: BRT
Collector-emitter voltage: 50V
Collector current: 0.1A
Power dissipation: 0.2W
Case: SOT323
Mounting: SMD
Kind of package: reel; tape
Frequency: 250MHz
Base resistor: 4.7kΩ
Base-emitter resistor: 47kΩ
Quantity in set/package: 3000pcs.
на замовлення 1290 шт:
термін постачання 21-30 дні (днів)Кількість | Ціна |
---|---|
39+ | 11.08 грн |
54+ | 7.44 грн |
61+ | 6.57 грн |
100+ | 4.23 грн |
479+ | 1.94 грн |
DF01M |
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Виробник: DIODES INCORPORATED
Category: SMD/THT sing. phase diode bridge rectif.
Description: Bridge rectifier: single-phase; Urmax: 100V; If: 1A; Ifsm: 50A; DFM
Type of bridge rectifier: single-phase
Max. off-state voltage: 100V
Load current: 1A
Max. forward impulse current: 50A
Case: DFM
Electrical mounting: THT
Kind of package: tube
Max. forward voltage: 1.1V
Features of semiconductor devices: glass passivated
Category: SMD/THT sing. phase diode bridge rectif.
Description: Bridge rectifier: single-phase; Urmax: 100V; If: 1A; Ifsm: 50A; DFM
Type of bridge rectifier: single-phase
Max. off-state voltage: 100V
Load current: 1A
Max. forward impulse current: 50A
Case: DFM
Electrical mounting: THT
Kind of package: tube
Max. forward voltage: 1.1V
Features of semiconductor devices: glass passivated
на замовлення 203 шт:
термін постачання 21-30 дні (днів)Кількість | Ціна |
---|---|
15+ | 28.99 грн |
20+ | 20.43 грн |
22+ | 18.61 грн |
50+ | 15.04 грн |
92+ | 10.13 грн |
DF02M |
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Виробник: DIODES INCORPORATED
Category: SMD/THT sing. phase diode bridge rectif.
Description: Bridge rectifier: single-phase; Urmax: 200V; If: 1A; Ifsm: 50A; DFM
Type of bridge rectifier: single-phase
Max. off-state voltage: 200V
Load current: 1A
Max. forward impulse current: 50A
Case: DFM
Electrical mounting: THT
Kind of package: tube
Max. forward voltage: 1.1V
Features of semiconductor devices: glass passivated
Category: SMD/THT sing. phase diode bridge rectif.
Description: Bridge rectifier: single-phase; Urmax: 200V; If: 1A; Ifsm: 50A; DFM
Type of bridge rectifier: single-phase
Max. off-state voltage: 200V
Load current: 1A
Max. forward impulse current: 50A
Case: DFM
Electrical mounting: THT
Kind of package: tube
Max. forward voltage: 1.1V
Features of semiconductor devices: glass passivated
на замовлення 264 шт:
термін постачання 21-30 дні (днів)Кількість | Ціна |
---|---|
12+ | 35.81 грн |
20+ | 20.58 грн |
50+ | 15.60 грн |
100+ | 13.86 грн |
102+ | 9.10 грн |
TB0900H-13-F |
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Виробник: DIODES INCORPORATED
Category: Thyristors - others
Description: Thyristor: TSS; Urmax: 75V; SMB; SMD; reel,tape; 100A; bidirectional
Type of thyristor: TSS
Max. off-state voltage: 75V
Case: SMB
Mounting: SMD
Kind of package: reel; tape
Max. forward impulse current: 100A
Semiconductor structure: bidirectional
Breakover voltage: 98V
Category: Thyristors - others
Description: Thyristor: TSS; Urmax: 75V; SMB; SMD; reel,tape; 100A; bidirectional
Type of thyristor: TSS
Max. off-state voltage: 75V
Case: SMB
Mounting: SMD
Kind of package: reel; tape
Max. forward impulse current: 100A
Semiconductor structure: bidirectional
Breakover voltage: 98V
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ZXMN2A03E6TA |
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Виробник: DIODES INCORPORATED
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 20V; 3.4A; 1.1W; SOT26
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 20V
Drain current: 3.4A
Power dissipation: 1.1W
Case: SOT26
Gate-source voltage: ±12V
On-state resistance: 0.1Ω
Mounting: SMD
Kind of package: reel; tape
Kind of channel: enhancement
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 20V; 3.4A; 1.1W; SOT26
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 20V
Drain current: 3.4A
Power dissipation: 1.1W
Case: SOT26
Gate-source voltage: ±12V
On-state resistance: 0.1Ω
Mounting: SMD
Kind of package: reel; tape
Kind of channel: enhancement
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DMT12H065LFDF-13 |
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Виробник: DIODES INCORPORATED
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 115V; 3.4A; Idm: 25A; 1.2W
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 115V
Drain current: 3.4A
Power dissipation: 1.2W
Case: U-DFN2020-6
Gate-source voltage: ±12V
On-state resistance: 0.35Ω
Mounting: SMD
Kind of package: 13 inch reel; tape
Kind of channel: enhancement
Gate charge: 5.5nC
Pulsed drain current: 25A
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 115V; 3.4A; Idm: 25A; 1.2W
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 115V
Drain current: 3.4A
Power dissipation: 1.2W
Case: U-DFN2020-6
Gate-source voltage: ±12V
On-state resistance: 0.35Ω
Mounting: SMD
Kind of package: 13 inch reel; tape
Kind of channel: enhancement
Gate charge: 5.5nC
Pulsed drain current: 25A
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DDTD113EC-7-F |
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Виробник: DIODES INCORPORATED
Category: NPN SMD transistors
Description: Transistor: NPN; bipolar; BRT; 50V; 0.5A; 200mW; SOT23; R1: 1kΩ
Mounting: SMD
Type of transistor: NPN
Collector current: 0.5A
Power dissipation: 0.2W
Current gain: 33
Collector-emitter voltage: 50V
Quantity in set/package: 3000pcs.
Base resistor: 1kΩ
Base-emitter resistor: 1kΩ
Kind of package: reel; tape
Frequency: 200MHz
Polarisation: bipolar
Kind of transistor: BRT
Case: SOT23
Category: NPN SMD transistors
Description: Transistor: NPN; bipolar; BRT; 50V; 0.5A; 200mW; SOT23; R1: 1kΩ
Mounting: SMD
Type of transistor: NPN
Collector current: 0.5A
Power dissipation: 0.2W
Current gain: 33
Collector-emitter voltage: 50V
Quantity in set/package: 3000pcs.
Base resistor: 1kΩ
Base-emitter resistor: 1kΩ
Kind of package: reel; tape
Frequency: 200MHz
Polarisation: bipolar
Kind of transistor: BRT
Case: SOT23
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DMN6068SE-13 |
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Виробник: DIODES INCORPORATED
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 60V; 4.5A; 2W; SOT223
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 60V
Drain current: 4.5A
Power dissipation: 2W
Case: SOT223
Gate-source voltage: ±20V
On-state resistance: 0.1Ω
Mounting: SMD
Kind of package: 13 inch reel; tape
Kind of channel: enhancement
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 60V; 4.5A; 2W; SOT223
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 60V
Drain current: 4.5A
Power dissipation: 2W
Case: SOT223
Gate-source voltage: ±20V
On-state resistance: 0.1Ω
Mounting: SMD
Kind of package: 13 inch reel; tape
Kind of channel: enhancement
на замовлення 2553 шт:
термін постачання 21-30 дні (днів)Кількість | Ціна |
---|---|
10+ | 46.04 грн |
13+ | 31.11 грн |
50+ | 23.91 грн |
71+ | 13.14 грн |
195+ | 12.43 грн |
DMN2020LSN-7 |
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Виробник: DIODES INCORPORATED
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 20V; 4.5A; Idm: 30A; 0.61W; SC59; ESD
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 20V
Drain current: 4.5A
Pulsed drain current: 30A
Power dissipation: 0.61W
Case: SC59
Gate-source voltage: ±12V
On-state resistance: 20mΩ
Mounting: SMD
Kind of package: 7 inch reel; tape
Kind of channel: enhancement
Version: ESD
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 20V; 4.5A; Idm: 30A; 0.61W; SC59; ESD
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 20V
Drain current: 4.5A
Pulsed drain current: 30A
Power dissipation: 0.61W
Case: SC59
Gate-source voltage: ±12V
On-state resistance: 20mΩ
Mounting: SMD
Kind of package: 7 inch reel; tape
Kind of channel: enhancement
Version: ESD
на замовлення 1316 шт:
термін постачання 21-30 дні (днів)Кількість | Ціна |
---|---|
14+ | 31.55 грн |
20+ | 20.27 грн |
50+ | 13.86 грн |
100+ | 11.88 грн |
130+ | 7.20 грн |
358+ | 6.81 грн |
ZXTN25020DFHTA |
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Виробник: DIODES INCORPORATED
Category: NPN SMD transistors
Description: Transistor: NPN; bipolar; 20V; 4.5A; 1.25W; SOT23
Type of transistor: NPN
Polarisation: bipolar
Collector-emitter voltage: 20V
Collector current: 4.5A
Power dissipation: 1.25W
Case: SOT23
Mounting: SMD
Quantity in set/package: 3000pcs.
Kind of package: reel; tape
Frequency: 215MHz
Category: NPN SMD transistors
Description: Transistor: NPN; bipolar; 20V; 4.5A; 1.25W; SOT23
Type of transistor: NPN
Polarisation: bipolar
Collector-emitter voltage: 20V
Collector current: 4.5A
Power dissipation: 1.25W
Case: SOT23
Mounting: SMD
Quantity in set/package: 3000pcs.
Kind of package: reel; tape
Frequency: 215MHz
на замовлення 2862 шт:
термін постачання 21-30 дні (днів)Кількість | Ціна |
---|---|
7+ | 68.21 грн |
11+ | 38.48 грн |
25+ | 26.13 грн |
50+ | 18.68 грн |
137+ | 17.66 грн |
DFLS1100Q-7 |
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Виробник: DIODES INCORPORATED
Category: SMD Schottky diodes
Description: Diode: Schottky rectifying; PowerDI®123; SMD; 100V; 1A; reel,tape
Type of diode: Schottky rectifying
Case: PowerDI®123
Mounting: SMD
Max. off-state voltage: 100V
Load current: 1A
Semiconductor structure: single diode
Capacitance: 36pF
Max. forward voltage: 0.86V
Leakage current: 0.35mA
Max. forward impulse current: 50A
Kind of package: reel; tape
Application: automotive industry
Category: SMD Schottky diodes
Description: Diode: Schottky rectifying; PowerDI®123; SMD; 100V; 1A; reel,tape
Type of diode: Schottky rectifying
Case: PowerDI®123
Mounting: SMD
Max. off-state voltage: 100V
Load current: 1A
Semiconductor structure: single diode
Capacitance: 36pF
Max. forward voltage: 0.86V
Leakage current: 0.35mA
Max. forward impulse current: 50A
Kind of package: reel; tape
Application: automotive industry
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В кошику
од. на суму грн.
BZT52C6V8-7-F |
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Виробник: DIODES INCORPORATED
Category: SMD Zener diodes
Description: Diode: Zener; 0.37W; 6.8V; SMD; reel,tape; SOD123; single diode
Type of diode: Zener
Power dissipation: 0.37W
Zener voltage: 6.8V
Mounting: SMD
Tolerance: ±6%
Kind of package: reel; tape
Case: SOD123
Semiconductor structure: single diode
Category: SMD Zener diodes
Description: Diode: Zener; 0.37W; 6.8V; SMD; reel,tape; SOD123; single diode
Type of diode: Zener
Power dissipation: 0.37W
Zener voltage: 6.8V
Mounting: SMD
Tolerance: ±6%
Kind of package: reel; tape
Case: SOD123
Semiconductor structure: single diode
на замовлення 833 шт:
термін постачання 21-30 дні (днів)Кількість | Ціна |
---|---|
59+ | 7.29 грн |
90+ | 4.43 грн |
103+ | 3.86 грн |
130+ | 3.05 грн |
500+ | 2.23 грн |
776+ | 1.20 грн |
BZT52C6V2-7-F |
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Виробник: DIODES INCORPORATED
Category: SMD Zener diodes
Description: Diode: Zener; 0.37W; 6.2V; SMD; reel,tape; SOD123; single diode
Type of diode: Zener
Power dissipation: 0.37W
Zener voltage: 6.2V
Mounting: SMD
Tolerance: ±6.5%
Kind of package: reel; tape
Case: SOD123
Semiconductor structure: single diode
Category: SMD Zener diodes
Description: Diode: Zener; 0.37W; 6.2V; SMD; reel,tape; SOD123; single diode
Type of diode: Zener
Power dissipation: 0.37W
Zener voltage: 6.2V
Mounting: SMD
Tolerance: ±6.5%
Kind of package: reel; tape
Case: SOD123
Semiconductor structure: single diode
на замовлення 2254 шт:
термін постачання 21-30 дні (днів)Кількість | Ціна |
---|---|
56+ | 7.67 грн |
61+ | 6.49 грн |
73+ | 5.46 грн |
146+ | 2.72 грн |
500+ | 1.84 грн |
771+ | 1.20 грн |
2118+ | 1.14 грн |
BZT52C6V8T-7 |
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Виробник: DIODES INCORPORATED
Category: SMD Zener diodes
Description: Diode: Zener; 0.3W; 6.8V; SMD; reel,tape; SOD523; single diode
Type of diode: Zener
Power dissipation: 0.3W
Zener voltage: 6.8V
Mounting: SMD
Tolerance: ±6%
Kind of package: reel; tape
Case: SOD523
Semiconductor structure: single diode
Category: SMD Zener diodes
Description: Diode: Zener; 0.3W; 6.8V; SMD; reel,tape; SOD523; single diode
Type of diode: Zener
Power dissipation: 0.3W
Zener voltage: 6.8V
Mounting: SMD
Tolerance: ±6%
Kind of package: reel; tape
Case: SOD523
Semiconductor structure: single diode
на замовлення 5800 шт:
термін постачання 21-30 дні (днів)Кількість | Ціна |
---|---|
39+ | 11.08 грн |
44+ | 9.18 грн |
50+ | 7.92 грн |
111+ | 3.59 грн |
438+ | 2.12 грн |
1202+ | 2.01 грн |
BZT52C6V2LP-7 |
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Виробник: DIODES INCORPORATED
Category: SMD Zener diodes
Description: Diode: Zener; 0.25W; 6.2V; SMD; reel,tape; X1-DFN1006-2
Type of diode: Zener
Power dissipation: 0.25W
Zener voltage: 6.2V
Mounting: SMD
Tolerance: ±6.5%
Kind of package: reel; tape
Case: X1-DFN1006-2
Semiconductor structure: single diode
Category: SMD Zener diodes
Description: Diode: Zener; 0.25W; 6.2V; SMD; reel,tape; X1-DFN1006-2
Type of diode: Zener
Power dissipation: 0.25W
Zener voltage: 6.2V
Mounting: SMD
Tolerance: ±6.5%
Kind of package: reel; tape
Case: X1-DFN1006-2
Semiconductor structure: single diode
на замовлення 1980 шт:
термін постачання 21-30 дні (днів)Кількість | Ціна |
---|---|
19+ | 23.02 грн |
24+ | 16.94 грн |
28+ | 14.49 грн |
36+ | 11.24 грн |
100+ | 7.52 грн |
160+ | 5.78 грн |
440+ | 5.46 грн |
BZT52C6V8S-7-F |
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Виробник: DIODES INCORPORATED
Category: SMD Zener diodes
Description: Diode: Zener; 0.2W; 6.8V; SMD; reel,tape; SOD323; single diode
Type of diode: Zener
Power dissipation: 0.2W
Zener voltage: 6.8V
Mounting: SMD
Tolerance: ±6%
Kind of package: reel; tape
Case: SOD323
Semiconductor structure: single diode
Category: SMD Zener diodes
Description: Diode: Zener; 0.2W; 6.8V; SMD; reel,tape; SOD323; single diode
Type of diode: Zener
Power dissipation: 0.2W
Zener voltage: 6.8V
Mounting: SMD
Tolerance: ±6%
Kind of package: reel; tape
Case: SOD323
Semiconductor structure: single diode
на замовлення 1970 шт:
термін постачання 21-30 дні (днів)Кількість | Ціна |
---|---|
46+ | 9.38 грн |
52+ | 7.76 грн |
59+ | 6.73 грн |
122+ | 3.26 грн |
500+ | 2.31 грн |
610+ | 1.52 грн |
1676+ | 1.44 грн |
BZT52C6V2-13-F |
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Виробник: DIODES INCORPORATED
Category: SMD Zener diodes
Description: Diode: Zener; 0.37W; 6.2V; SMD; reel,tape; SOD123; single diode
Type of diode: Zener
Power dissipation: 0.37W
Zener voltage: 6.2V
Mounting: SMD
Tolerance: ±6%
Kind of package: reel; tape
Case: SOD123
Semiconductor structure: single diode
Category: SMD Zener diodes
Description: Diode: Zener; 0.37W; 6.2V; SMD; reel,tape; SOD123; single diode
Type of diode: Zener
Power dissipation: 0.37W
Zener voltage: 6.2V
Mounting: SMD
Tolerance: ±6%
Kind of package: reel; tape
Case: SOD123
Semiconductor structure: single diode
на замовлення 1190 шт:
термін постачання 21-30 дні (днів)Кількість | Ціна |
---|---|
56+ | 7.67 грн |
61+ | 6.49 грн |
74+ | 5.38 грн |
160+ | 2.48 грн |
500+ | 1.81 грн |
693+ | 1.34 грн |
BZT52C6V2TQ-13-F |
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Виробник: DIODES INCORPORATED
Category: SMD Zener diodes
Description: Diode: Zener; 0.3W; 6.2V; SMD; reel,tape; SOD523; single diode
Type of diode: Zener
Power dissipation: 0.3W
Zener voltage: 6.2V
Mounting: SMD
Tolerance: ±6%
Kind of package: reel; tape
Case: SOD523
Semiconductor structure: single diode
Application: automotive industry
Category: SMD Zener diodes
Description: Diode: Zener; 0.3W; 6.2V; SMD; reel,tape; SOD523; single diode
Type of diode: Zener
Power dissipation: 0.3W
Zener voltage: 6.2V
Mounting: SMD
Tolerance: ±6%
Kind of package: reel; tape
Case: SOD523
Semiconductor structure: single diode
Application: automotive industry
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В кошику
од. на суму грн.
BZT52C6V8Q-7-F |
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Виробник: DIODES INCORPORATED
Category: SMD Zener diodes
Description: Diode: Zener; 0.37W; 6.8V; SMD; reel,tape; SOD123; single diode
Type of diode: Zener
Power dissipation: 0.37W
Zener voltage: 6.8V
Mounting: SMD
Tolerance: ±6%
Kind of package: reel; tape
Case: SOD123
Semiconductor structure: single diode
Application: automotive industry
Category: SMD Zener diodes
Description: Diode: Zener; 0.37W; 6.8V; SMD; reel,tape; SOD123; single diode
Type of diode: Zener
Power dissipation: 0.37W
Zener voltage: 6.8V
Mounting: SMD
Tolerance: ±6%
Kind of package: reel; tape
Case: SOD123
Semiconductor structure: single diode
Application: automotive industry
товару немає в наявності
В кошику
од. на суму грн.
BZT52C6V2Q-7-F |
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Виробник: DIODES INCORPORATED
Category: SMD Zener diodes
Description: Diode: Zener; 0.37W; 6.2V; SMD; reel,tape; SOD123; single diode
Type of diode: Zener
Power dissipation: 0.37W
Zener voltage: 6.2V
Mounting: SMD
Tolerance: ±6.5%
Kind of package: reel; tape
Case: SOD123
Semiconductor structure: single diode
Application: automotive industry
Category: SMD Zener diodes
Description: Diode: Zener; 0.37W; 6.2V; SMD; reel,tape; SOD123; single diode
Type of diode: Zener
Power dissipation: 0.37W
Zener voltage: 6.2V
Mounting: SMD
Tolerance: ±6.5%
Kind of package: reel; tape
Case: SOD123
Semiconductor structure: single diode
Application: automotive industry
товару немає в наявності
В кошику
од. на суму грн.
BZT52C6V2SQ-7-F |
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Виробник: DIODES INCORPORATED
Category: SMD Zener diodes
Description: Diode: Zener; 0.2W; 6.2V; SMD; reel,tape; SOD323; single diode
Type of diode: Zener
Power dissipation: 0.2W
Zener voltage: 6.2V
Mounting: SMD
Tolerance: ±6%
Kind of package: reel; tape
Case: SOD323
Semiconductor structure: single diode
Application: automotive industry
Category: SMD Zener diodes
Description: Diode: Zener; 0.2W; 6.2V; SMD; reel,tape; SOD323; single diode
Type of diode: Zener
Power dissipation: 0.2W
Zener voltage: 6.2V
Mounting: SMD
Tolerance: ±6%
Kind of package: reel; tape
Case: SOD323
Semiconductor structure: single diode
Application: automotive industry
товару немає в наявності
В кошику
од. на суму грн.
BZT52C6V2T-7 |
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Виробник: DIODES INCORPORATED
Category: SMD Zener diodes
Description: Diode: Zener; 0.3W; 6.2V; SMD; reel,tape; SOD523; single diode
Type of diode: Zener
Power dissipation: 0.3W
Zener voltage: 6.2V
Mounting: SMD
Tolerance: ±6.5%
Kind of package: reel; tape
Case: SOD523
Semiconductor structure: single diode
Category: SMD Zener diodes
Description: Diode: Zener; 0.3W; 6.2V; SMD; reel,tape; SOD523; single diode
Type of diode: Zener
Power dissipation: 0.3W
Zener voltage: 6.2V
Mounting: SMD
Tolerance: ±6.5%
Kind of package: reel; tape
Case: SOD523
Semiconductor structure: single diode
товару немає в наявності
В кошику
од. на суму грн.
AP7380-50W5-7 |
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Виробник: DIODES INCORPORATED
Category: LDO fixed voltage regulators
Description: IC: voltage regulator; LDO,linear,fixed; 5V; 0.15A; SOT25; SMD
Type of integrated circuit: voltage regulator
Kind of voltage regulator: fixed; LDO; linear
Voltage drop: 1.5V
Output voltage: 5V
Output current: 0.15A
Case: SOT25
Mounting: SMD
Manufacturer series: AP7380
Kind of package: reel; tape
Operating temperature: -40...125°C
Tolerance: ±1%
Number of channels: 1
Input voltage: 3.5...24V
Integrated circuit features: shutdown mode control input
Category: LDO fixed voltage regulators
Description: IC: voltage regulator; LDO,linear,fixed; 5V; 0.15A; SOT25; SMD
Type of integrated circuit: voltage regulator
Kind of voltage regulator: fixed; LDO; linear
Voltage drop: 1.5V
Output voltage: 5V
Output current: 0.15A
Case: SOT25
Mounting: SMD
Manufacturer series: AP7380
Kind of package: reel; tape
Operating temperature: -40...125°C
Tolerance: ±1%
Number of channels: 1
Input voltage: 3.5...24V
Integrated circuit features: shutdown mode control input
на замовлення 2995 шт:
термін постачання 21-30 дні (днів)Кількість | Ціна |
---|---|
18+ | 24.73 грн |
21+ | 19.32 грн |
24+ | 17.02 грн |
28+ | 14.41 грн |
100+ | 11.88 грн |
104+ | 8.95 грн |
284+ | 8.47 грн |