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DMT69M8LFV-13 DIODES INCORPORATED DMT69M8LFV.pdf Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 60V; 8.9A; Idm: 60A; 2.2W
On-state resistance: 13.3mΩ
Power dissipation: 2.2W
Gate-source voltage: ±16V
Kind of package: 13 inch reel; tape
Kind of channel: enhancement
Type of transistor: N-MOSFET
Case: PowerDI3333-8
Mounting: SMD
Polarisation: unipolar
Pulsed drain current: 60A
Drain current: 8.9A
Drain-source voltage: 60V
Gate charge: 33.5nC
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DMMT5551S-7-F DMMT5551S-7-F DIODES INCORPORATED pVersion=0046&contRep=ZT&docId=005056AB82531EE986AC5E03E61C78BF&compId=DMMT5551.pdf?ci_sign=f60cd0e5a12f975d11403171edbc245cb1734cb2 Category: NPN SMD transistors
Description: Transistor: NPN x2; bipolar; 160V; 0.2A; 300mW; SOT26
Type of transistor: NPN x2
Polarisation: bipolar
Collector-emitter voltage: 160V
Collector current: 0.2A
Power dissipation: 0.3W
Case: SOT26
Current gain: 50...250
Mounting: SMD
Quantity in set/package: 3000pcs.
Kind of package: reel; tape
Frequency: 100...300MHz
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DMHC3025LSDQ-13 DMHC3025LSDQ-13 DIODES INCORPORATED DMHC3025LSDQ_ds.pdf Category: Multi channel transistors
Description: Transistor: N/P-MOSFET; unipolar; 30/-30V; 6.1/-4.3A; Idm: 60÷-30A
Mounting: SMD
Type of transistor: N/P-MOSFET
Polarisation: unipolar
Gate charge: 11.7/11.4nC
On-state resistance: 40/80mΩ
Power dissipation: 1.5W
Drain current: 6.1/-4.3A
Gate-source voltage: ±20V
Drain-source voltage: 30/-30V
Pulsed drain current: 60...-30A
Kind of package: 13 inch reel; tape
Application: automotive industry
Case: SO8
Kind of channel: enhancement
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74AHCT04T14-13 DIODES INCORPORATED pVersion=0046&contRep=ZT&docId=005056AB281E1EDDA4E70BF021E3E0D3&compId=74AHCT04.pdf?ci_sign=0e24153ef9bf53f04a7a698e97f691b9fe46b158 Category: Gates, inverters
Description: IC: digital; inverter; Ch: 6; IN: 1; CMOS,TTL; SMD; TSSOP14; -40÷150°C
Type of integrated circuit: digital
Kind of integrated circuit: inverter
Number of channels: 6
Number of inputs: 1
Technology: CMOS; TTL
Mounting: SMD
Case: TSSOP14
Operating temperature: -40...150°C
Kind of output: push-pull
Family: AHCT
Supply voltage: 4.5...5.5V DC
Kind of package: reel; tape
Kind of input: with Schmitt trigger
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74AHCT04S14-13 DIODES INCORPORATED pVersion=0046&contRep=ZT&docId=005056AB281E1EDDA4E70BF021E2E0D3&compId=74AHCT04.pdf?ci_sign=43a8565fa61cbe99c83ebef35db1c07a9957a5b4 Category: Gates, inverters
Description: IC: digital; inverter; Ch: 6; IN: 1; CMOS,TTL; SMD; SO14; 4.5÷5.5VDC
Type of integrated circuit: digital
Kind of integrated circuit: inverter
Number of channels: 6
Number of inputs: 1
Technology: CMOS; TTL
Mounting: SMD
Case: SO14
Operating temperature: -40...150°C
Kind of output: push-pull
Family: AHCT
Supply voltage: 4.5...5.5V DC
Kind of package: reel; tape
Kind of input: with Schmitt trigger
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DMN2710UTQ-7 DIODES INCORPORATED DMN2710UTQ.pdf Category: SMD N channel transistors
Description: Transistor: N-MOSFET; 20V; 870mA; 320mW; automotive industry; SMT
Mounting: SMD
Type of transistor: N-MOSFET
Electrical mounting: SMT
Technology: MOSFET
Gate charge: 0.6nC
Kind of channel: enhancement
Application: automotive industry
Power dissipation: 0.32W
On-state resistance: 0.45Ω
Drain current: 870mA
Gate-source voltage: 6V
Drain-source voltage: 20V
на замовлення 9000 шт:
термін постачання 21-30 дні (днів)
3000+5.79 грн
Мінімальне замовлення: 3000
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2DD2679-13 2DD2679-13 DIODES INCORPORATED pVersion=0046&contRep=ZT&docId=005056AB0ED61ED8AEE8CD0E25B72143&compId=2DD2679.pdf?ci_sign=0a8e99213e0100f76a2e4a465697386013dba603 Category: NPN SMD transistors
Description: Transistor: NPN; bipolar; 30V; 2A; 900mW; SOT89
Type of transistor: NPN
Polarisation: bipolar
Collector-emitter voltage: 30V
Collector current: 2A
Power dissipation: 0.9W
Case: SOT89
Mounting: SMD
Kind of package: reel; tape
Frequency: 240MHz
Current gain: 270...680
Quantity in set/package: 2500pcs.
на замовлення 2333 шт:
термін постачання 21-30 дні (днів)
15+29.82 грн
22+19.30 грн
100+13.36 грн
500+10.51 грн
1000+9.61 грн
Мінімальне замовлення: 15
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FCX495TA FCX495TA DIODES INCORPORATED FCX495.pdf Category: NPN SMD transistors
Description: Transistor: NPN; bipolar; 150V; 1A; 1W; SOT89
Type of transistor: NPN
Polarisation: bipolar
Collector-emitter voltage: 150V
Collector current: 1A
Power dissipation: 1W
Case: SOT89
Mounting: SMD
Kind of package: reel; tape
Frequency: 100MHz
Pulsed collector current: 2A
Quantity in set/package: 1000pcs.
на замовлення 1078 шт:
термін постачання 21-30 дні (днів)
10+43.85 грн
18+22.97 грн
100+16.53 грн
200+14.82 грн
500+12.79 грн
1000+12.62 грн
Мінімальне замовлення: 10
В кошику  од. на суму  грн.
AL5817MP-13 DIODES INCORPORATED AL5817.pdf Category: LED drivers
Description: IC: driver; LED driver; MSOP8EP; 15mA; Ch: 1; 4.5÷60VDC
Case: MSOP8EP
Type of integrated circuit: driver
Kind of integrated circuit: LED driver
Mounting: SMD
Operating temperature: -40...125°C
Output current: 15mA
Number of channels: 1
Operating voltage: 4.5...60V DC
Kind of package: reel; tape
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74AHC05T14-13 DIODES INCORPORATED 74AHC05.pdf Category: Gates, inverters
Description: IC: digital; inverter; Ch: 6; IN: 1; CMOS; SMD; TSSOP14; 2÷5.5VDC; AHC
Type of integrated circuit: digital
Number of channels: 6
Mounting: SMD
Case: TSSOP14
Supply voltage: 2...5.5V DC
Operating temperature: -40...150°C
Kind of package: reel; tape
Family: AHC
Kind of output: open drain
Kind of input: with Schmitt trigger
Number of inputs: 1
Technology: CMOS
Kind of integrated circuit: inverter
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DMT2004UFDF-7 DIODES INCORPORATED DMT2004UFDF.pdf Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 24V; 11.2A; Idm: 70A; 1.8W
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 24V
Drain current: 11.2A
Pulsed drain current: 70A
Power dissipation: 1.8W
Case: U-DFN2020-6
Gate-source voltage: ±12V
On-state resistance: 12.5mΩ
Mounting: SMD
Gate charge: 53.7nC
Kind of package: 7 inch reel; tape
Kind of channel: enhancement
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DMT2004UFG-7 DIODES INCORPORATED DMT2004UFG.pdf Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 24V; 55A; Idm: 90A; 2.3W
Case: PowerDI3333-8
Mounting: SMD
Drain-source voltage: 24V
Pulsed drain current: 90A
Drain current: 55A
Gate charge: 53.7nC
On-state resistance: 10mΩ
Power dissipation: 2.3W
Gate-source voltage: ±12V
Kind of package: 7 inch reel; tape
Kind of channel: enhancement
Type of transistor: N-MOSFET
Polarisation: unipolar
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DMT2004UFV-7 DIODES INCORPORATED DMT2004UFV.pdf Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 24V; 55A; Idm: 90A; 2.3W
Case: PowerDI3333-8
Mounting: SMD
Drain-source voltage: 24V
Pulsed drain current: 90A
Drain current: 55A
Gate charge: 53.7nC
On-state resistance: 10mΩ
Power dissipation: 2.3W
Gate-source voltage: ±12V
Kind of package: 7 inch reel; tape
Kind of channel: enhancement
Type of transistor: N-MOSFET
Polarisation: unipolar
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DMT2005UDV-13 DIODES INCORPORATED DMT2005UDV.pdf Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 24V; 40A; Idm: 70A; 1.9W
Case: PowerDI3333-8
Mounting: SMD
Drain-source voltage: 24V
Pulsed drain current: 70A
Drain current: 40A
Gate charge: 46.7nC
On-state resistance: 12mΩ
Power dissipation: 1.9W
Gate-source voltage: ±12V
Kind of package: 13 inch reel; tape
Kind of channel: enhancement
Type of transistor: N-MOSFET
Polarisation: unipolar
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DMN3066LQ-13 DMN3066LQ-13 DIODES INCORPORATED DMN3066LQ.pdf Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 30V; 2.9A; Idm: 21A; 1.33W; SOT23
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 30V
Drain current: 2.9A
Power dissipation: 1.33W
Case: SOT23
Gate-source voltage: ±12V
On-state resistance: 98mΩ
Mounting: SMD
Kind of package: 13 inch reel; tape
Kind of channel: enhancement
Application: automotive industry
Gate charge: 4.1nC
Pulsed drain current: 21A
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KBP04G KBP04G DIODES INCORPORATED pVersion=0046&contRep=ZT&docId=005056AB752F1EE89CD8E613AAA733D7&compId=KBP005G_ser.pdf?ci_sign=471abe1c817507136ba76f3ade949bcde4486439 Category: Flat single phase diode bridge rectif.
Description: Bridge rectifier: single-phase; Urmax: 400V; If: 1.5A; Ifsm: 40A
Type of bridge rectifier: single-phase
Max. off-state voltage: 0.4kV
Load current: 1.5A
Max. forward impulse current: 40A
Version: flat
Case: KBP
Electrical mounting: THT
Leads: flat pin
Kind of package: tube
Max. forward voltage: 1.1V
Features of semiconductor devices: glass passivated
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KBP04G DIODES INCORPORATED ds21203.pdf Category: Flat single phase diode bridge rectif.
Description: Bridge rectifier: single-phase; Urmax: 400V; If: 1.5A; Ifsm: 40A
Type of bridge rectifier: single-phase
Max. off-state voltage: 0.4kV
Load current: 1.5A
Max. forward impulse current: 40A
Version: flat
Case: KBP
Electrical mounting: THT
Leads: flat pin
Kind of package: tube
Max. forward voltage: 1.1V
Features of semiconductor devices: glass passivated
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AP2311AMP-13 DIODES INCORPORATED AP23x1A.pdf Category: Power switches - integrated circuits
Description: IC: power switch; high-side,USB switch; 2A; Ch: 1; P-Channel; SMD
Mounting: SMD
Case: MSOP8EP
Active logical level: high
Type of integrated circuit: power switch
Kind of output: P-Channel
Kind of package: reel; tape
On-state resistance: 70mΩ
Output current: 2A
Number of channels: 1
Supply voltage: 2.7...5.5V DC
Kind of integrated circuit: high-side; USB switch
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DMC1028UVT-13 DIODES INCORPORATED DMC1028UVT.pdf Category: Multi channel transistors
Description: Transistor: N/P-MOSFET
Type of transistor: N/P-MOSFET
на замовлення 10000 шт:
термін постачання 21-30 дні (днів)
10000+11.75 грн
Мінімальне замовлення: 10000
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DMN3060LVT-13 DIODES INCORPORATED DMN3060LVT.pdf Category: Multi channel transistors
Description: Transistor: N-MOSFET x2
Type of transistor: N-MOSFET x2
на замовлення 10000 шт:
термін постачання 21-30 дні (днів)
10000+9.47 грн
Мінімальне замовлення: 10000
В кошику  од. на суму  грн.
SMAJ51CA-13-F SMAJ51CA-13-F DIODES INCORPORATED pVersion=0046&contRep=ZT&docId=005056AB281E1EDCB5D5D61A59AC00D2&compId=SMAJ_ser.pdf?ci_sign=97d7e07ffaac288e0eb21ce6c5e39913c3418386 Category: Bidirectional TVS SMD diodes
Description: Diode: TVS; 0.4kW; 56.7÷62.7V; 4.9A; bidirectional; SMA; reel,tape
Type of diode: TVS
Peak pulse power dissipation: 0.4kW
Max. off-state voltage: 51V
Breakdown voltage: 56.7...62.7V
Max. forward impulse current: 4.9A
Semiconductor structure: bidirectional
Case: SMA
Mounting: SMD
Leakage current: 5µA
Kind of package: reel; tape
Features of semiconductor devices: glass passivated
на замовлення 600 шт:
термін постачання 21-30 дні (днів)
22+20.17 грн
27+15.15 грн
32+13.11 грн
50+8.88 грн
100+7.66 грн
500+5.70 грн
Мінімальне замовлення: 22
В кошику  од. на суму  грн.
SMAJ54CA-13-F SMAJ54CA-13-F DIODES INCORPORATED SMAJ_ser.pdf Category: Bidirectional TVS SMD diodes
Description: Diode: TVS; 0.4kW; 60÷66.3V; 4.6A; bidirectional; SMA; reel,tape
Type of diode: TVS
Peak pulse power dissipation: 0.4kW
Max. off-state voltage: 54V
Breakdown voltage: 60...66.3V
Max. forward impulse current: 4.6A
Semiconductor structure: bidirectional
Case: SMA
Mounting: SMD
Leakage current: 5µA
Kind of package: reel; tape
Features of semiconductor devices: glass passivated
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D5V0P4URL6SO-7 D5V0P4URL6SO-7 DIODES INCORPORATED D5V0P4URL6SO.pdf Category: Protection diodes - arrays
Description: Diode: TVS array; 4.5V; 20A; unidirectional; SOT23-6; Ch: 4
Case: SOT23-6
Mounting: SMD
Kind of package: reel; tape
Number of channels: 4
Max. off-state voltage: 3.3V
Breakdown voltage: 4.5V
Max. forward impulse current: 20A
Application: HDMI
Semiconductor structure: unidirectional
Type of diode: TVS array
Capacitance: 3pF
Leakage current: 1µA
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BZT52C3V0S-7-F BZT52C3V0S-7-F DIODES INCORPORATED pVersion=0046&contRep=ZT&docId=005056AB752F1ED7BED534E388BC6A18&compId=BZT52CxxS_ser.pdf?ci_sign=19b509c5a9084fd233a8e598b6a776ae01cc116a Category: SMD Zener diodes
Description: Diode: Zener; 0.2W; 3V; SMD; reel,tape; SOD323; single diode
Type of diode: Zener
Power dissipation: 0.2W
Zener voltage: 3V
Mounting: SMD
Tolerance: ±6.5%
Kind of package: reel; tape
Case: SOD323
Semiconductor structure: single diode
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FMMT458QTA DIODES INCORPORATED FMMT458.pdf Category: NPN SMD transistors
Description: Transistor: NPN; bipolar; 400V; 0.225A; 500mW; SOT23
Type of transistor: NPN
Polarisation: bipolar
Collector-emitter voltage: 400V
Collector current: 0.225A
Power dissipation: 0.5W
Case: SOT23
Mounting: SMD
Quantity in set/package: 3000pcs.
Kind of package: reel; tape
Frequency: 50MHz
Application: automotive industry
Current gain: 15...300
Pulsed collector current: 1A
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ZXMN6A09GTA ZXMN6A09GTA DIODES INCORPORATED pVersion=0046&contRep=ZT&docId=005056AB82531EE986CC216436A758BF&compId=ZXMN6A09G.pdf?ci_sign=04dbc1273ac4c3eb2ce59b14697641c045db5b7a Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 60V; 6.2A; 2W; SOT223
Type of transistor: N-MOSFET
Kind of package: reel; tape
Mounting: SMD
Case: SOT223
Polarisation: unipolar
On-state resistance: 60mΩ
Power dissipation: 2W
Drain current: 6.2A
Gate-source voltage: ±20V
Drain-source voltage: 60V
Kind of channel: enhancement
на замовлення 662 шт:
термін постачання 21-30 дні (днів)
4+109.63 грн
10+73.13 грн
15+67.35 грн
50+53.75 грн
100+48.05 грн
200+43.82 грн
Мінімальне замовлення: 4
В кошику  од. на суму  грн.
ZXMC6A09DN8TA ZXMC6A09DN8TA DIODES INCORPORATED pVersion=0046&contRep=ZT&docId=005056AB752F1ED6879B7E25FB2D91BF&compId=ZXMC6A09DN8TA.pdf?ci_sign=c66943eacf319df19153cba6185df9177d2c8bb8 Category: Multi channel transistors
Description: Transistor: N/P-MOSFET; unipolar; complementary pair; 60/-60V
Type of transistor: N/P-MOSFET
Kind of package: reel; tape
Mounting: SMD
Case: SO8
Polarisation: unipolar
On-state resistance: 0.045/0.055Ω
Power dissipation: 2.1W
Drain current: 4.8/-5.1A
Gate-source voltage: ±20V
Kind of transistor: complementary pair
Drain-source voltage: 60/-60V
Kind of channel: enhancement
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ZXMN10A09KTC ZXMN10A09KTC DIODES INCORPORATED pVersion=0046&contRep=ZT&docId=005056AB82531EE986CBC341120678BF&compId=ZXMN10A09K.pdf?ci_sign=3f2949a1a3d78163da9615e4694cdd4317761576 Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 100V; 7.1A; 4.31W; TO252
Type of transistor: N-MOSFET
Kind of package: reel; tape
Mounting: SMD
Case: TO252
Polarisation: unipolar
On-state resistance: 0.1Ω
Power dissipation: 4.31W
Drain current: 7.1A
Gate-source voltage: ±20V
Drain-source voltage: 100V
Kind of channel: enhancement
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ZXMN6A09GQTA DIODES INCORPORATED ZXMN6A09GQ.pdf Category: Transistors - Unclassified
Description: ZXMN6A09GQTA
на замовлення 1000 шт:
термін постачання 21-30 дні (днів)
1000+61.39 грн
Мінімальне замовлення: 1000
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ZXMN6A09KTC DIODES INCORPORATED ZXMN6A09K.pdf Category: SMD N channel transistors
Description: Transistor: N-MOSFET
Type of transistor: N-MOSFET
на замовлення 2500 шт:
термін постачання 21-30 дні (днів)
2500+48.76 грн
Мінімальне замовлення: 2500
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DMP2004K-7 DMP2004K-7 DIODES INCORPORATED pVersion=0046&contRep=ZT&docId=005056AB752F1EE797FA3CA5FD6FE748&compId=DMP2004K.pdf?ci_sign=0f2e2648481c019baa8fd6e1a50e7a79e6d3eaa4 Category: SMD P channel transistors
Description: Transistor: P-MOSFET; unipolar; -20V; -0.6A; 0.55W; SOT23; ESD
Version: ESD
Case: SOT23
Kind of channel: enhancement
Mounting: SMD
Type of transistor: P-MOSFET
Polarisation: unipolar
Drain-source voltage: -20V
Drain current: -600mA
On-state resistance: 2Ω
Power dissipation: 0.55W
Gate-source voltage: ±8V
Kind of package: 7 inch reel; tape
на замовлення 9000 шт:
термін постачання 21-30 дні (днів)
24+18.42 грн
35+11.65 грн
52+7.98 грн
100+6.78 грн
500+4.67 грн
1000+4.01 грн
1500+3.67 грн
3000+3.17 грн
6000+2.86 грн
Мінімальне замовлення: 24
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BCM846BS-7 DIODES INCORPORATED BCM846BS.pdf Category: NPN SMD transistors
Description: Transistor: NPN x2; bipolar; 65V; 0.1A; 200mW; SOT363
Type of transistor: NPN x2
Polarisation: bipolar
Collector-emitter voltage: 65V
Collector current: 0.1A
Power dissipation: 0.2W
Case: SOT363
Current gain: 200...450
Mounting: SMD
Kind of package: reel; tape
Frequency: 100MHz
Pulsed collector current: 0.2A
Quantity in set/package: 3000pcs.
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FMMT459QTA DIODES INCORPORATED FMMT459Q.pdf Category: NPN SMD transistors
Description: Transistor: NPN; bipolar; 450V; 0.15A; 806mW; SOT23
Type of transistor: NPN
Polarisation: bipolar
Collector-emitter voltage: 450V
Collector current: 0.15A
Power dissipation: 0.806W
Case: SOT23
Pulsed collector current: 0.5A
Current gain: 50...120
Mounting: SMD
Quantity in set/package: 3000pcs.
Kind of package: reel; tape
Frequency: 50MHz
Application: automotive industry
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D1213A-02SR-7 D1213A-02SR-7 DIODES INCORPORATED pVersion=0046&contRep=ZT&docId=005056AB82531EE984FD3EF5C2B178BF&compId=D1213A-02SR.pdf?ci_sign=f26653fc9b86e82e84f472e6500285f2defe62ac Category: Protection diodes - arrays
Description: Diode: TVS array; 6V; 5A; 0.4W; unidirectional; SOT143; Ch: 2; ESD
Type of diode: TVS array
Breakdown voltage: 6V
Semiconductor structure: unidirectional
Mounting: SMD
Case: SOT143
Max. off-state voltage: 3.3V
Leakage current: 1µA
Number of channels: 2
Kind of package: reel; tape
Capacitance: 0.85pF
Application: automotive industry
Peak pulse power dissipation: 0.4W
Version: ESD
Max. forward impulse current: 5A
на замовлення 4099 шт:
термін постачання 21-30 дні (днів)
14+31.57 грн
18+22.80 грн
21+19.71 грн
100+12.13 грн
500+9.12 грн
1000+8.23 грн
3000+7.25 грн
Мінімальне замовлення: 14
В кошику  од. на суму  грн.
D1213A-01WS-7 D1213A-01WS-7 DIODES INCORPORATED D1213A-01WS.pdf Category: Protection diodes - arrays
Description: Diode: TVS array; 6V; 5A; 0.25W; unidirectional; SOD323; Ch: 1; ESD
Type of diode: TVS array
Breakdown voltage: 6V
Semiconductor structure: unidirectional
Mounting: SMD
Case: SOD323
Max. off-state voltage: 3.3V
Leakage current: 1µA
Number of channels: 1
Kind of package: reel; tape
Capacitance: 0.85pF
Application: Ethernet; USB
Peak pulse power dissipation: 0.25W
Version: ESD
Max. forward impulse current: 5A
на замовлення 3348 шт:
термін постачання 21-30 дні (днів)
39+11.40 грн
52+7.98 грн
61+6.68 грн
89+4.59 грн
103+3.97 грн
500+3.03 грн
1000+2.78 грн
1500+2.69 грн
Мінімальне замовлення: 39
В кошику  од. на суму  грн.
D1213A-02SOL-7 D1213A-02SOL-7 DIODES INCORPORATED D1213A_02SOL.pdf Category: Protection diodes - arrays
Description: Diode: TVS array; 6V; 5A; 0.3W; unidirectional; SOT23; Ch: 2; ESD
Type of diode: TVS array
Breakdown voltage: 6V
Semiconductor structure: unidirectional
Mounting: SMD
Case: SOT23
Max. off-state voltage: 3.3V
Leakage current: 1µA
Number of channels: 2
Kind of package: reel; tape
Capacitance: 0.85pF
Application: Ethernet; USB
Peak pulse power dissipation: 0.3W
Version: ESD
Max. forward impulse current: 5A
на замовлення 3324 шт:
термін постачання 21-30 дні (днів)
34+13.16 грн
37+11.24 грн
40+10.34 грн
53+7.82 грн
100+6.92 грн
500+5.29 грн
1000+4.72 грн
Мінімальне замовлення: 34
В кошику  од. на суму  грн.
D1213A-04V-7 D1213A-04V-7 DIODES INCORPORATED D1213A-04V.pdf Category: Protection diodes - arrays
Description: Diode: TVS array; 6V; unidirectional; SOT563; Ch: 4; reel,tape
Case: SOT563
Mounting: SMD
Kind of package: reel; tape
Capacitance: 1.2pF
Leakage current: 1µA
Number of channels: 4
Max. off-state voltage: 3.3V
Breakdown voltage: 6V
Application: automotive industry
Semiconductor structure: unidirectional
Type of diode: TVS array
на замовлення 1619 шт:
термін постачання 21-30 дні (днів)
20+21.93 грн
27+15.64 грн
31+13.36 грн
39+10.67 грн
100+7.90 грн
500+7.17 грн
Мінімальне замовлення: 20
В кошику  од. на суму  грн.
D1213A-01SO-7 D1213A-01SO-7 DIODES INCORPORATED ds32185.pdf Category: Protection diodes - arrays
Description: Diode: TVS array; 6V; unidirectional; SOT23; Ch: 1; reel,tape
Type of diode: TVS array
Breakdown voltage: 6V
Semiconductor structure: unidirectional
Mounting: SMD
Case: SOT23
Max. off-state voltage: 3.3V
Leakage current: 1µA
Number of channels: 1
Kind of package: reel; tape
Capacitance: 1.2pF
Application: automotive industry
на замовлення 2770 шт:
термін постачання 21-30 дні (днів)
32+14.03 грн
39+10.59 грн
45+9.12 грн
57+7.26 грн
100+5.13 грн
500+3.66 грн
1000+3.31 грн
Мінімальне замовлення: 32
В кошику  од. на суму  грн.
D1213A-04TS-7 D1213A-04TS-7 DIODES INCORPORATED D1213A-04TS.pdf Category: Protection diodes - arrays
Description: Diode: TVS array; 6V; 5A; unidirectional; TSOT26; Ch: 4; reel,tape
Type of diode: TVS array
Breakdown voltage: 6V
Max. forward impulse current: 5A
Semiconductor structure: unidirectional
Mounting: SMD
Case: TSOT26
Leakage current: 1µA
Number of channels: 4
Kind of package: reel; tape
Application: automotive industry
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D1213A-02S-7 DIODES INCORPORATED D1213A-02S.pdf Category: Protection diodes - arrays
Description: Diode: TVS array; 6V; unidirectional; SC70,SOT353; Ch: 2; reel,tape
Type of diode: TVS array
Breakdown voltage: 6V
Semiconductor structure: unidirectional
Mounting: SMD
Case: SC70; SOT353
Max. off-state voltage: 3.3V
Leakage current: 1µA
Number of channels: 2
Kind of package: reel; tape
Capacitance: 1.2pF
Application: automotive industry
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D1213A-04SO-7 DIODES INCORPORATED ds32144.pdf Category: Protection diodes - arrays
Description: Diode: TVS array; 6V; unidirectional; SOT23-6; Ch: 4; reel,tape
Case: SOT23-6
Mounting: SMD
Kind of package: reel; tape
Number of channels: 4
Max. off-state voltage: 3.3V
Breakdown voltage: 6V
Application: automotive industry
Semiconductor structure: unidirectional
Type of diode: TVS array
Capacitance: 1.2pF
Leakage current: 1µA
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D1213A-01LP-7B DIODES INCORPORATED D1213A-01LP.pdf Category: Protection diodes - arrays
Description: Diode: TVS array; 6V; unidirectional; DFN1006-2; Ch: 1; reel,tape
Type of diode: TVS array
Breakdown voltage: 6V
Semiconductor structure: unidirectional
Mounting: SMD
Case: DFN1006-2
Max. off-state voltage: 3.3V
Leakage current: 1µA
Number of channels: 1
Kind of package: reel; tape
Capacitance: 1.2pF
Application: automotive industry
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D1213A-01LP4-7B DIODES INCORPORATED D1213A-01LP4.pdf Category: Protection diodes - arrays
Description: Diode: TVS array; 6V; unidirectional; DFN1006-2; Ch: 1; reel,tape
Type of diode: TVS array
Breakdown voltage: 6V
Semiconductor structure: unidirectional
Mounting: SMD
Case: DFN1006-2
Max. off-state voltage: 3.3V
Leakage current: 1µA
Number of channels: 1
Kind of package: reel; tape
Capacitance: 1.2pF
Application: automotive industry
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D1213A-02WL-7 DIODES INCORPORATED D1213A_02WL.pdf Category: Protection diodes - arrays
Description: Diode: TVS array; 6V; unidirectional; SOT323; Ch: 2; reel,tape
Type of diode: TVS array
Breakdown voltage: 6V
Semiconductor structure: unidirectional
Mounting: SMD
Case: SOT323
Max. off-state voltage: 3.3V
Leakage current: 1µA
Number of channels: 2
Kind of package: reel; tape
Capacitance: 1.2pF
Application: universal
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D1213A-01W-7 DIODES INCORPORATED D1213A-01W.pdf Category: Protection diodes - arrays
Description: Diode: TVS array; 6V; unidirectional; SOT323; Ch: 1; reel,tape
Type of diode: TVS array
Breakdown voltage: 6V
Semiconductor structure: unidirectional
Mounting: SMD
Case: SOT323
Max. off-state voltage: 3.3V
Leakage current: 1µA
Number of channels: 1
Kind of package: reel; tape
Capacitance: 1.2pF
Application: automotive industry
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D1213A-02SO-7 DIODES INCORPORATED Category: Protection diodes - arrays
Description: Diode: TVS array; 6V; unidirectional; SOT23; Ch: 2; reel,tape
Type of diode: TVS array
Breakdown voltage: 6V
Semiconductor structure: unidirectional
Mounting: SMD
Case: SOT23
Max. off-state voltage: 3.3V
Leakage current: 1µA
Number of channels: 2
Kind of package: reel; tape
Capacitance: 1.2pF
Application: automotive industry
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D1213A-01LPQ-7B DIODES INCORPORATED D1213A-01LPQ.pdf Category: Protection diodes - arrays
Description: Diode: TVS array; 6V; bidirectional; DFN1006-2; Ch: 1; reel,tape
Type of diode: TVS array
Breakdown voltage: 6V
Semiconductor structure: bidirectional
Mounting: SMD
Case: DFN1006-2
Max. off-state voltage: 3.3V
Leakage current: 1µA
Number of channels: 1
Kind of package: reel; tape
Capacitance: 1.2pF
Application: automotive industry
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D1213A-01T-7 DIODES INCORPORATED D1213A-01T.pdf Category: Protection diodes - arrays
Description: Diode: TVS array; 6V; unidirectional; SOD523; Ch: 1; reel,tape
Type of diode: TVS array
Breakdown voltage: 6V
Semiconductor structure: unidirectional
Mounting: SMD
Case: SOD523
Max. off-state voltage: 3.3V
Leakage current: 1µA
Number of channels: 1
Kind of package: reel; tape
Capacitance: 1.2pF
Application: automotive industry
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D1213A-02SM-7 DIODES INCORPORATED D1213A-02SM.pdf Category: Protection diodes - arrays
Description: Diode: TVS array; 6V; unidirectional; SOT25; Ch: 2; reel,tape
Type of diode: TVS array
Breakdown voltage: 6V
Semiconductor structure: unidirectional
Mounting: SMD
Case: SOT25
Max. off-state voltage: 3.3V
Leakage current: 1µA
Number of channels: 2
Kind of package: reel; tape
Capacitance: 1.2pF
Application: automotive industry
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D1213A-04MR-13 DIODES INCORPORATED D1213A-04MR.pdf Category: Protection diodes - arrays
Description: Diode: TVS array; 6V; unidirectional; MSOP10; Ch: 4; reel,tape
Type of diode: TVS array
Breakdown voltage: 6V
Semiconductor structure: unidirectional
Mounting: SMD
Case: MSOP10
Max. off-state voltage: 3.3V
Leakage current: 1µA
Number of channels: 4
Kind of package: reel; tape
Capacitance: 1.2pF
Application: automotive industry
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D1213A-01WSQ-7 DIODES INCORPORATED D1213A-01WSQ.pdf Category: Protection diodes - arrays
Description: D1213A-01WSQ-7
на замовлення 3000 шт:
термін постачання 21-30 дні (днів)
3000+3.99 грн
Мінімальне замовлення: 3000
В кошику  од. на суму  грн.
SBR10200CTFP DIODES INCORPORATED SBR10200CT-SBR10200CTFP.pdf Category: THT universal diodes
Description: Diode: rectifying; THT; 200V; 5Ax2; tube; Ifsm: 110A; ITO220AB; 20ns
Kind of package: tube
Semiconductor structure: common cathode; double
Case: ITO220AB
Type of diode: rectifying
Technology: SBR®
Mounting: THT
Reverse recovery time: 20ns
Load current: 5A x2
Max. load current: 10A
Max. forward impulse current: 110A
Max. off-state voltage: 200V
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AP1538SG-13 AP1538SG-13 DIODES INCORPORATED pVersion=0046&contRep=ZT&docId=005056AB752F1ED6B7AA8415CA325E28&compId=AP1538x-DTE.pdf?ci_sign=c9d433d1fb71e213d1f4ca9e8682434b417d8cb5 Category: Voltage regulators - DC/DC circuits
Description: PMIC; DC/DC converter; Uin: 3.6÷18VDC; Uout: 0.8÷18VDC; 3A; SMD
Type of integrated circuit: PMIC
Kind of integrated circuit: DC/DC converter
Input voltage: 3.6...18V DC
Output voltage: 0.8...18V DC
Output current: 3A
Case: SOP-8L-DEP
Mounting: SMD
Frequency: 300kHz
Topology: buck
Operating temperature: -20...85°C
Kind of package: reel; tape
Efficiency: 92%
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AS7815ADTR-G1 DIODES INCORPORATED AS78XXA.pdf Category: Fixed voltage regulators
Description: IC: voltage regulator; linear,fixed; 15V; 1A; DPAK; SMD; AS78XXA
Type of integrated circuit: voltage regulator
Kind of voltage regulator: fixed; linear
Voltage drop: 2V
Output voltage: 15V
Output current: 1A
Case: DPAK
Mounting: SMD
Manufacturer series: AS78XXA
Kind of package: reel; tape
Operating temperature: -40...125°C
Tolerance: ±4%
Number of channels: 1
Input voltage: 17.9...30V
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DMT32M5LFG-13 DIODES INCORPORATED DMT32M5LFG.pdf Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 30V; 24A; Idm: 350A; 2.3W
Kind of channel: enhancement
Mounting: SMD
Type of transistor: N-MOSFET
Polarisation: unipolar
Gate charge: 67.7nC
On-state resistance: 2.6mΩ
Power dissipation: 2.3W
Drain current: 24A
Gate-source voltage: ±20V
Drain-source voltage: 30V
Pulsed drain current: 350A
Kind of package: 13 inch reel; tape
Case: PowerDI3333-8
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DMT32M5LFG-7 DIODES INCORPORATED DMT32M5LFG.pdf Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 30V; 24A; Idm: 350A; 2.3W
Kind of channel: enhancement
Mounting: SMD
Type of transistor: N-MOSFET
Polarisation: unipolar
Gate charge: 67.7nC
On-state resistance: 2.6mΩ
Power dissipation: 2.3W
Drain current: 24A
Gate-source voltage: ±20V
Drain-source voltage: 30V
Pulsed drain current: 350A
Kind of package: 7 inch reel; tape
Case: PowerDI3333-8
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DMT32M5LPS-13 DIODES INCORPORATED DMT32M5LPS.pdf Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 30V; 120A; Idm: 350A; 3.2W
Kind of channel: enhancement
Mounting: SMD
Type of transistor: N-MOSFET
Polarisation: unipolar
Gate charge: 68nC
On-state resistance: 3mΩ
Power dissipation: 3.2W
Drain current: 120A
Gate-source voltage: ±20V
Drain-source voltage: 30V
Pulsed drain current: 350A
Kind of package: 13 inch reel; tape
Case: PowerDI5060-8
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DMT69M5LCG-7 DIODES INCORPORATED Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 60V; 11.7A; Idm: 208A; 2.64W
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 60V
Drain current: 11.7A
Pulsed drain current: 208A
Power dissipation: 2.64W
Case: V-DFN3333-8
Gate-source voltage: ±20V
On-state resistance: 12.5mΩ
Mounting: SMD
Gate charge: 28.4nC
Kind of package: 7 inch reel; tape
Kind of channel: enhancement
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DMT69M5LFVWQ-13 DIODES INCORPORATED Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 60V; 11.9A; Idm: 160A; 2.74W
Kind of channel: enhancement
Mounting: SMD
Type of transistor: N-MOSFET
Polarisation: unipolar
Gate charge: 28.4nC
On-state resistance: 12.5mΩ
Power dissipation: 2.74W
Drain current: 11.9A
Gate-source voltage: ±20V
Drain-source voltage: 60V
Pulsed drain current: 160A
Kind of package: 13 inch reel; tape
Application: automotive industry
Case: PowerDI3333-8
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DMT10H4M5LPS-13 DIODES INCORPORATED DMT10H4M5LPS.pdf Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 100V; 15A; Idm: 400A; 2.3W
Kind of channel: enhancement
Mounting: SMD
Type of transistor: N-MOSFET
Polarisation: unipolar
Gate charge: 80nC
On-state resistance: 6.2mΩ
Power dissipation: 2.3W
Drain current: 15A
Gate-source voltage: ±20V
Drain-source voltage: 100V
Pulsed drain current: 400A
Kind of package: 13 inch reel; tape
Case: PowerDI5060-8
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DMT69M8LFV-13 DMT69M8LFV.pdf
Виробник: DIODES INCORPORATED
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 60V; 8.9A; Idm: 60A; 2.2W
On-state resistance: 13.3mΩ
Power dissipation: 2.2W
Gate-source voltage: ±16V
Kind of package: 13 inch reel; tape
Kind of channel: enhancement
Type of transistor: N-MOSFET
Case: PowerDI3333-8
Mounting: SMD
Polarisation: unipolar
Pulsed drain current: 60A
Drain current: 8.9A
Drain-source voltage: 60V
Gate charge: 33.5nC
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DMMT5551S-7-F pVersion=0046&contRep=ZT&docId=005056AB82531EE986AC5E03E61C78BF&compId=DMMT5551.pdf?ci_sign=f60cd0e5a12f975d11403171edbc245cb1734cb2
DMMT5551S-7-F
Виробник: DIODES INCORPORATED
Category: NPN SMD transistors
Description: Transistor: NPN x2; bipolar; 160V; 0.2A; 300mW; SOT26
Type of transistor: NPN x2
Polarisation: bipolar
Collector-emitter voltage: 160V
Collector current: 0.2A
Power dissipation: 0.3W
Case: SOT26
Current gain: 50...250
Mounting: SMD
Quantity in set/package: 3000pcs.
Kind of package: reel; tape
Frequency: 100...300MHz
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DMHC3025LSDQ-13 DMHC3025LSDQ_ds.pdf
DMHC3025LSDQ-13
Виробник: DIODES INCORPORATED
Category: Multi channel transistors
Description: Transistor: N/P-MOSFET; unipolar; 30/-30V; 6.1/-4.3A; Idm: 60÷-30A
Mounting: SMD
Type of transistor: N/P-MOSFET
Polarisation: unipolar
Gate charge: 11.7/11.4nC
On-state resistance: 40/80mΩ
Power dissipation: 1.5W
Drain current: 6.1/-4.3A
Gate-source voltage: ±20V
Drain-source voltage: 30/-30V
Pulsed drain current: 60...-30A
Kind of package: 13 inch reel; tape
Application: automotive industry
Case: SO8
Kind of channel: enhancement
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74AHCT04T14-13 pVersion=0046&contRep=ZT&docId=005056AB281E1EDDA4E70BF021E3E0D3&compId=74AHCT04.pdf?ci_sign=0e24153ef9bf53f04a7a698e97f691b9fe46b158
Виробник: DIODES INCORPORATED
Category: Gates, inverters
Description: IC: digital; inverter; Ch: 6; IN: 1; CMOS,TTL; SMD; TSSOP14; -40÷150°C
Type of integrated circuit: digital
Kind of integrated circuit: inverter
Number of channels: 6
Number of inputs: 1
Technology: CMOS; TTL
Mounting: SMD
Case: TSSOP14
Operating temperature: -40...150°C
Kind of output: push-pull
Family: AHCT
Supply voltage: 4.5...5.5V DC
Kind of package: reel; tape
Kind of input: with Schmitt trigger
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74AHCT04S14-13 pVersion=0046&contRep=ZT&docId=005056AB281E1EDDA4E70BF021E2E0D3&compId=74AHCT04.pdf?ci_sign=43a8565fa61cbe99c83ebef35db1c07a9957a5b4
Виробник: DIODES INCORPORATED
Category: Gates, inverters
Description: IC: digital; inverter; Ch: 6; IN: 1; CMOS,TTL; SMD; SO14; 4.5÷5.5VDC
Type of integrated circuit: digital
Kind of integrated circuit: inverter
Number of channels: 6
Number of inputs: 1
Technology: CMOS; TTL
Mounting: SMD
Case: SO14
Operating temperature: -40...150°C
Kind of output: push-pull
Family: AHCT
Supply voltage: 4.5...5.5V DC
Kind of package: reel; tape
Kind of input: with Schmitt trigger
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DMN2710UTQ-7 DMN2710UTQ.pdf
Виробник: DIODES INCORPORATED
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; 20V; 870mA; 320mW; automotive industry; SMT
Mounting: SMD
Type of transistor: N-MOSFET
Electrical mounting: SMT
Technology: MOSFET
Gate charge: 0.6nC
Kind of channel: enhancement
Application: automotive industry
Power dissipation: 0.32W
On-state resistance: 0.45Ω
Drain current: 870mA
Gate-source voltage: 6V
Drain-source voltage: 20V
на замовлення 9000 шт:
термін постачання 21-30 дні (днів)
Кількість Ціна
3000+5.79 грн
Мінімальне замовлення: 3000
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2DD2679-13 pVersion=0046&contRep=ZT&docId=005056AB0ED61ED8AEE8CD0E25B72143&compId=2DD2679.pdf?ci_sign=0a8e99213e0100f76a2e4a465697386013dba603
2DD2679-13
Виробник: DIODES INCORPORATED
Category: NPN SMD transistors
Description: Transistor: NPN; bipolar; 30V; 2A; 900mW; SOT89
Type of transistor: NPN
Polarisation: bipolar
Collector-emitter voltage: 30V
Collector current: 2A
Power dissipation: 0.9W
Case: SOT89
Mounting: SMD
Kind of package: reel; tape
Frequency: 240MHz
Current gain: 270...680
Quantity in set/package: 2500pcs.
на замовлення 2333 шт:
термін постачання 21-30 дні (днів)
Кількість Ціна
15+29.82 грн
22+19.30 грн
100+13.36 грн
500+10.51 грн
1000+9.61 грн
Мінімальне замовлення: 15
В кошику  од. на суму  грн.
FCX495TA FCX495.pdf
FCX495TA
Виробник: DIODES INCORPORATED
Category: NPN SMD transistors
Description: Transistor: NPN; bipolar; 150V; 1A; 1W; SOT89
Type of transistor: NPN
Polarisation: bipolar
Collector-emitter voltage: 150V
Collector current: 1A
Power dissipation: 1W
Case: SOT89
Mounting: SMD
Kind of package: reel; tape
Frequency: 100MHz
Pulsed collector current: 2A
Quantity in set/package: 1000pcs.
на замовлення 1078 шт:
термін постачання 21-30 дні (днів)
Кількість Ціна
10+43.85 грн
18+22.97 грн
100+16.53 грн
200+14.82 грн
500+12.79 грн
1000+12.62 грн
Мінімальне замовлення: 10
В кошику  од. на суму  грн.
AL5817MP-13 AL5817.pdf
Виробник: DIODES INCORPORATED
Category: LED drivers
Description: IC: driver; LED driver; MSOP8EP; 15mA; Ch: 1; 4.5÷60VDC
Case: MSOP8EP
Type of integrated circuit: driver
Kind of integrated circuit: LED driver
Mounting: SMD
Operating temperature: -40...125°C
Output current: 15mA
Number of channels: 1
Operating voltage: 4.5...60V DC
Kind of package: reel; tape
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74AHC05T14-13 74AHC05.pdf
Виробник: DIODES INCORPORATED
Category: Gates, inverters
Description: IC: digital; inverter; Ch: 6; IN: 1; CMOS; SMD; TSSOP14; 2÷5.5VDC; AHC
Type of integrated circuit: digital
Number of channels: 6
Mounting: SMD
Case: TSSOP14
Supply voltage: 2...5.5V DC
Operating temperature: -40...150°C
Kind of package: reel; tape
Family: AHC
Kind of output: open drain
Kind of input: with Schmitt trigger
Number of inputs: 1
Technology: CMOS
Kind of integrated circuit: inverter
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DMT2004UFDF-7 DMT2004UFDF.pdf
Виробник: DIODES INCORPORATED
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 24V; 11.2A; Idm: 70A; 1.8W
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 24V
Drain current: 11.2A
Pulsed drain current: 70A
Power dissipation: 1.8W
Case: U-DFN2020-6
Gate-source voltage: ±12V
On-state resistance: 12.5mΩ
Mounting: SMD
Gate charge: 53.7nC
Kind of package: 7 inch reel; tape
Kind of channel: enhancement
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DMT2004UFG-7 DMT2004UFG.pdf
Виробник: DIODES INCORPORATED
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 24V; 55A; Idm: 90A; 2.3W
Case: PowerDI3333-8
Mounting: SMD
Drain-source voltage: 24V
Pulsed drain current: 90A
Drain current: 55A
Gate charge: 53.7nC
On-state resistance: 10mΩ
Power dissipation: 2.3W
Gate-source voltage: ±12V
Kind of package: 7 inch reel; tape
Kind of channel: enhancement
Type of transistor: N-MOSFET
Polarisation: unipolar
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DMT2004UFV-7 DMT2004UFV.pdf
Виробник: DIODES INCORPORATED
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 24V; 55A; Idm: 90A; 2.3W
Case: PowerDI3333-8
Mounting: SMD
Drain-source voltage: 24V
Pulsed drain current: 90A
Drain current: 55A
Gate charge: 53.7nC
On-state resistance: 10mΩ
Power dissipation: 2.3W
Gate-source voltage: ±12V
Kind of package: 7 inch reel; tape
Kind of channel: enhancement
Type of transistor: N-MOSFET
Polarisation: unipolar
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DMT2005UDV-13 DMT2005UDV.pdf
Виробник: DIODES INCORPORATED
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 24V; 40A; Idm: 70A; 1.9W
Case: PowerDI3333-8
Mounting: SMD
Drain-source voltage: 24V
Pulsed drain current: 70A
Drain current: 40A
Gate charge: 46.7nC
On-state resistance: 12mΩ
Power dissipation: 1.9W
Gate-source voltage: ±12V
Kind of package: 13 inch reel; tape
Kind of channel: enhancement
Type of transistor: N-MOSFET
Polarisation: unipolar
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DMN3066LQ-13 DMN3066LQ.pdf
DMN3066LQ-13
Виробник: DIODES INCORPORATED
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 30V; 2.9A; Idm: 21A; 1.33W; SOT23
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 30V
Drain current: 2.9A
Power dissipation: 1.33W
Case: SOT23
Gate-source voltage: ±12V
On-state resistance: 98mΩ
Mounting: SMD
Kind of package: 13 inch reel; tape
Kind of channel: enhancement
Application: automotive industry
Gate charge: 4.1nC
Pulsed drain current: 21A
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KBP04G pVersion=0046&contRep=ZT&docId=005056AB752F1EE89CD8E613AAA733D7&compId=KBP005G_ser.pdf?ci_sign=471abe1c817507136ba76f3ade949bcde4486439
KBP04G
Виробник: DIODES INCORPORATED
Category: Flat single phase diode bridge rectif.
Description: Bridge rectifier: single-phase; Urmax: 400V; If: 1.5A; Ifsm: 40A
Type of bridge rectifier: single-phase
Max. off-state voltage: 0.4kV
Load current: 1.5A
Max. forward impulse current: 40A
Version: flat
Case: KBP
Electrical mounting: THT
Leads: flat pin
Kind of package: tube
Max. forward voltage: 1.1V
Features of semiconductor devices: glass passivated
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KBP04G ds21203.pdf
Виробник: DIODES INCORPORATED
Category: Flat single phase diode bridge rectif.
Description: Bridge rectifier: single-phase; Urmax: 400V; If: 1.5A; Ifsm: 40A
Type of bridge rectifier: single-phase
Max. off-state voltage: 0.4kV
Load current: 1.5A
Max. forward impulse current: 40A
Version: flat
Case: KBP
Electrical mounting: THT
Leads: flat pin
Kind of package: tube
Max. forward voltage: 1.1V
Features of semiconductor devices: glass passivated
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В кошику  од. на суму  грн.
AP2311AMP-13 AP23x1A.pdf
Виробник: DIODES INCORPORATED
Category: Power switches - integrated circuits
Description: IC: power switch; high-side,USB switch; 2A; Ch: 1; P-Channel; SMD
Mounting: SMD
Case: MSOP8EP
Active logical level: high
Type of integrated circuit: power switch
Kind of output: P-Channel
Kind of package: reel; tape
On-state resistance: 70mΩ
Output current: 2A
Number of channels: 1
Supply voltage: 2.7...5.5V DC
Kind of integrated circuit: high-side; USB switch
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В кошику  од. на суму  грн.
DMC1028UVT-13 DMC1028UVT.pdf
Виробник: DIODES INCORPORATED
Category: Multi channel transistors
Description: Transistor: N/P-MOSFET
Type of transistor: N/P-MOSFET
на замовлення 10000 шт:
термін постачання 21-30 дні (днів)
Кількість Ціна
10000+11.75 грн
Мінімальне замовлення: 10000
В кошику  од. на суму  грн.
DMN3060LVT-13 DMN3060LVT.pdf
Виробник: DIODES INCORPORATED
Category: Multi channel transistors
Description: Transistor: N-MOSFET x2
Type of transistor: N-MOSFET x2
на замовлення 10000 шт:
термін постачання 21-30 дні (днів)
Кількість Ціна
10000+9.47 грн
Мінімальне замовлення: 10000
В кошику  од. на суму  грн.
SMAJ51CA-13-F pVersion=0046&contRep=ZT&docId=005056AB281E1EDCB5D5D61A59AC00D2&compId=SMAJ_ser.pdf?ci_sign=97d7e07ffaac288e0eb21ce6c5e39913c3418386
SMAJ51CA-13-F
Виробник: DIODES INCORPORATED
Category: Bidirectional TVS SMD diodes
Description: Diode: TVS; 0.4kW; 56.7÷62.7V; 4.9A; bidirectional; SMA; reel,tape
Type of diode: TVS
Peak pulse power dissipation: 0.4kW
Max. off-state voltage: 51V
Breakdown voltage: 56.7...62.7V
Max. forward impulse current: 4.9A
Semiconductor structure: bidirectional
Case: SMA
Mounting: SMD
Leakage current: 5µA
Kind of package: reel; tape
Features of semiconductor devices: glass passivated
на замовлення 600 шт:
термін постачання 21-30 дні (днів)
Кількість Ціна
22+20.17 грн
27+15.15 грн
32+13.11 грн
50+8.88 грн
100+7.66 грн
500+5.70 грн
Мінімальне замовлення: 22
В кошику  од. на суму  грн.
SMAJ54CA-13-F SMAJ_ser.pdf
SMAJ54CA-13-F
Виробник: DIODES INCORPORATED
Category: Bidirectional TVS SMD diodes
Description: Diode: TVS; 0.4kW; 60÷66.3V; 4.6A; bidirectional; SMA; reel,tape
Type of diode: TVS
Peak pulse power dissipation: 0.4kW
Max. off-state voltage: 54V
Breakdown voltage: 60...66.3V
Max. forward impulse current: 4.6A
Semiconductor structure: bidirectional
Case: SMA
Mounting: SMD
Leakage current: 5µA
Kind of package: reel; tape
Features of semiconductor devices: glass passivated
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D5V0P4URL6SO-7 D5V0P4URL6SO.pdf
D5V0P4URL6SO-7
Виробник: DIODES INCORPORATED
Category: Protection diodes - arrays
Description: Diode: TVS array; 4.5V; 20A; unidirectional; SOT23-6; Ch: 4
Case: SOT23-6
Mounting: SMD
Kind of package: reel; tape
Number of channels: 4
Max. off-state voltage: 3.3V
Breakdown voltage: 4.5V
Max. forward impulse current: 20A
Application: HDMI
Semiconductor structure: unidirectional
Type of diode: TVS array
Capacitance: 3pF
Leakage current: 1µA
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BZT52C3V0S-7-F pVersion=0046&contRep=ZT&docId=005056AB752F1ED7BED534E388BC6A18&compId=BZT52CxxS_ser.pdf?ci_sign=19b509c5a9084fd233a8e598b6a776ae01cc116a
BZT52C3V0S-7-F
Виробник: DIODES INCORPORATED
Category: SMD Zener diodes
Description: Diode: Zener; 0.2W; 3V; SMD; reel,tape; SOD323; single diode
Type of diode: Zener
Power dissipation: 0.2W
Zener voltage: 3V
Mounting: SMD
Tolerance: ±6.5%
Kind of package: reel; tape
Case: SOD323
Semiconductor structure: single diode
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FMMT458QTA FMMT458.pdf
Виробник: DIODES INCORPORATED
Category: NPN SMD transistors
Description: Transistor: NPN; bipolar; 400V; 0.225A; 500mW; SOT23
Type of transistor: NPN
Polarisation: bipolar
Collector-emitter voltage: 400V
Collector current: 0.225A
Power dissipation: 0.5W
Case: SOT23
Mounting: SMD
Quantity in set/package: 3000pcs.
Kind of package: reel; tape
Frequency: 50MHz
Application: automotive industry
Current gain: 15...300
Pulsed collector current: 1A
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ZXMN6A09GTA pVersion=0046&contRep=ZT&docId=005056AB82531EE986CC216436A758BF&compId=ZXMN6A09G.pdf?ci_sign=04dbc1273ac4c3eb2ce59b14697641c045db5b7a
ZXMN6A09GTA
Виробник: DIODES INCORPORATED
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 60V; 6.2A; 2W; SOT223
Type of transistor: N-MOSFET
Kind of package: reel; tape
Mounting: SMD
Case: SOT223
Polarisation: unipolar
On-state resistance: 60mΩ
Power dissipation: 2W
Drain current: 6.2A
Gate-source voltage: ±20V
Drain-source voltage: 60V
Kind of channel: enhancement
на замовлення 662 шт:
термін постачання 21-30 дні (днів)
Кількість Ціна
4+109.63 грн
10+73.13 грн
15+67.35 грн
50+53.75 грн
100+48.05 грн
200+43.82 грн
Мінімальне замовлення: 4
В кошику  од. на суму  грн.
ZXMC6A09DN8TA pVersion=0046&contRep=ZT&docId=005056AB752F1ED6879B7E25FB2D91BF&compId=ZXMC6A09DN8TA.pdf?ci_sign=c66943eacf319df19153cba6185df9177d2c8bb8
ZXMC6A09DN8TA
Виробник: DIODES INCORPORATED
Category: Multi channel transistors
Description: Transistor: N/P-MOSFET; unipolar; complementary pair; 60/-60V
Type of transistor: N/P-MOSFET
Kind of package: reel; tape
Mounting: SMD
Case: SO8
Polarisation: unipolar
On-state resistance: 0.045/0.055Ω
Power dissipation: 2.1W
Drain current: 4.8/-5.1A
Gate-source voltage: ±20V
Kind of transistor: complementary pair
Drain-source voltage: 60/-60V
Kind of channel: enhancement
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ZXMN10A09KTC pVersion=0046&contRep=ZT&docId=005056AB82531EE986CBC341120678BF&compId=ZXMN10A09K.pdf?ci_sign=3f2949a1a3d78163da9615e4694cdd4317761576
ZXMN10A09KTC
Виробник: DIODES INCORPORATED
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 100V; 7.1A; 4.31W; TO252
Type of transistor: N-MOSFET
Kind of package: reel; tape
Mounting: SMD
Case: TO252
Polarisation: unipolar
On-state resistance: 0.1Ω
Power dissipation: 4.31W
Drain current: 7.1A
Gate-source voltage: ±20V
Drain-source voltage: 100V
Kind of channel: enhancement
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ZXMN6A09GQTA ZXMN6A09GQ.pdf
Виробник: DIODES INCORPORATED
Category: Transistors - Unclassified
Description: ZXMN6A09GQTA
на замовлення 1000 шт:
термін постачання 21-30 дні (днів)
Кількість Ціна
1000+61.39 грн
Мінімальне замовлення: 1000
В кошику  од. на суму  грн.
ZXMN6A09KTC ZXMN6A09K.pdf
Виробник: DIODES INCORPORATED
Category: SMD N channel transistors
Description: Transistor: N-MOSFET
Type of transistor: N-MOSFET
на замовлення 2500 шт:
термін постачання 21-30 дні (днів)
Кількість Ціна
2500+48.76 грн
Мінімальне замовлення: 2500
В кошику  од. на суму  грн.
DMP2004K-7 pVersion=0046&contRep=ZT&docId=005056AB752F1EE797FA3CA5FD6FE748&compId=DMP2004K.pdf?ci_sign=0f2e2648481c019baa8fd6e1a50e7a79e6d3eaa4
DMP2004K-7
Виробник: DIODES INCORPORATED
Category: SMD P channel transistors
Description: Transistor: P-MOSFET; unipolar; -20V; -0.6A; 0.55W; SOT23; ESD
Version: ESD
Case: SOT23
Kind of channel: enhancement
Mounting: SMD
Type of transistor: P-MOSFET
Polarisation: unipolar
Drain-source voltage: -20V
Drain current: -600mA
On-state resistance: 2Ω
Power dissipation: 0.55W
Gate-source voltage: ±8V
Kind of package: 7 inch reel; tape
на замовлення 9000 шт:
термін постачання 21-30 дні (днів)
Кількість Ціна
24+18.42 грн
35+11.65 грн
52+7.98 грн
100+6.78 грн
500+4.67 грн
1000+4.01 грн
1500+3.67 грн
3000+3.17 грн
6000+2.86 грн
Мінімальне замовлення: 24
В кошику  од. на суму  грн.
BCM846BS-7 BCM846BS.pdf
Виробник: DIODES INCORPORATED
Category: NPN SMD transistors
Description: Transistor: NPN x2; bipolar; 65V; 0.1A; 200mW; SOT363
Type of transistor: NPN x2
Polarisation: bipolar
Collector-emitter voltage: 65V
Collector current: 0.1A
Power dissipation: 0.2W
Case: SOT363
Current gain: 200...450
Mounting: SMD
Kind of package: reel; tape
Frequency: 100MHz
Pulsed collector current: 0.2A
Quantity in set/package: 3000pcs.
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FMMT459QTA FMMT459Q.pdf
Виробник: DIODES INCORPORATED
Category: NPN SMD transistors
Description: Transistor: NPN; bipolar; 450V; 0.15A; 806mW; SOT23
Type of transistor: NPN
Polarisation: bipolar
Collector-emitter voltage: 450V
Collector current: 0.15A
Power dissipation: 0.806W
Case: SOT23
Pulsed collector current: 0.5A
Current gain: 50...120
Mounting: SMD
Quantity in set/package: 3000pcs.
Kind of package: reel; tape
Frequency: 50MHz
Application: automotive industry
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D1213A-02SR-7 pVersion=0046&contRep=ZT&docId=005056AB82531EE984FD3EF5C2B178BF&compId=D1213A-02SR.pdf?ci_sign=f26653fc9b86e82e84f472e6500285f2defe62ac
D1213A-02SR-7
Виробник: DIODES INCORPORATED
Category: Protection diodes - arrays
Description: Diode: TVS array; 6V; 5A; 0.4W; unidirectional; SOT143; Ch: 2; ESD
Type of diode: TVS array
Breakdown voltage: 6V
Semiconductor structure: unidirectional
Mounting: SMD
Case: SOT143
Max. off-state voltage: 3.3V
Leakage current: 1µA
Number of channels: 2
Kind of package: reel; tape
Capacitance: 0.85pF
Application: automotive industry
Peak pulse power dissipation: 0.4W
Version: ESD
Max. forward impulse current: 5A
на замовлення 4099 шт:
термін постачання 21-30 дні (днів)
Кількість Ціна
14+31.57 грн
18+22.80 грн
21+19.71 грн
100+12.13 грн
500+9.12 грн
1000+8.23 грн
3000+7.25 грн
Мінімальне замовлення: 14
В кошику  од. на суму  грн.
D1213A-01WS-7 D1213A-01WS.pdf
D1213A-01WS-7
Виробник: DIODES INCORPORATED
Category: Protection diodes - arrays
Description: Diode: TVS array; 6V; 5A; 0.25W; unidirectional; SOD323; Ch: 1; ESD
Type of diode: TVS array
Breakdown voltage: 6V
Semiconductor structure: unidirectional
Mounting: SMD
Case: SOD323
Max. off-state voltage: 3.3V
Leakage current: 1µA
Number of channels: 1
Kind of package: reel; tape
Capacitance: 0.85pF
Application: Ethernet; USB
Peak pulse power dissipation: 0.25W
Version: ESD
Max. forward impulse current: 5A
на замовлення 3348 шт:
термін постачання 21-30 дні (днів)
Кількість Ціна
39+11.40 грн
52+7.98 грн
61+6.68 грн
89+4.59 грн
103+3.97 грн
500+3.03 грн
1000+2.78 грн
1500+2.69 грн
Мінімальне замовлення: 39
В кошику  од. на суму  грн.
D1213A-02SOL-7 D1213A_02SOL.pdf
D1213A-02SOL-7
Виробник: DIODES INCORPORATED
Category: Protection diodes - arrays
Description: Diode: TVS array; 6V; 5A; 0.3W; unidirectional; SOT23; Ch: 2; ESD
Type of diode: TVS array
Breakdown voltage: 6V
Semiconductor structure: unidirectional
Mounting: SMD
Case: SOT23
Max. off-state voltage: 3.3V
Leakage current: 1µA
Number of channels: 2
Kind of package: reel; tape
Capacitance: 0.85pF
Application: Ethernet; USB
Peak pulse power dissipation: 0.3W
Version: ESD
Max. forward impulse current: 5A
на замовлення 3324 шт:
термін постачання 21-30 дні (днів)
Кількість Ціна
34+13.16 грн
37+11.24 грн
40+10.34 грн
53+7.82 грн
100+6.92 грн
500+5.29 грн
1000+4.72 грн
Мінімальне замовлення: 34
В кошику  од. на суму  грн.
D1213A-04V-7 D1213A-04V.pdf
D1213A-04V-7
Виробник: DIODES INCORPORATED
Category: Protection diodes - arrays
Description: Diode: TVS array; 6V; unidirectional; SOT563; Ch: 4; reel,tape
Case: SOT563
Mounting: SMD
Kind of package: reel; tape
Capacitance: 1.2pF
Leakage current: 1µA
Number of channels: 4
Max. off-state voltage: 3.3V
Breakdown voltage: 6V
Application: automotive industry
Semiconductor structure: unidirectional
Type of diode: TVS array
на замовлення 1619 шт:
термін постачання 21-30 дні (днів)
Кількість Ціна
20+21.93 грн
27+15.64 грн
31+13.36 грн
39+10.67 грн
100+7.90 грн
500+7.17 грн
Мінімальне замовлення: 20
В кошику  од. на суму  грн.
D1213A-01SO-7 ds32185.pdf
D1213A-01SO-7
Виробник: DIODES INCORPORATED
Category: Protection diodes - arrays
Description: Diode: TVS array; 6V; unidirectional; SOT23; Ch: 1; reel,tape
Type of diode: TVS array
Breakdown voltage: 6V
Semiconductor structure: unidirectional
Mounting: SMD
Case: SOT23
Max. off-state voltage: 3.3V
Leakage current: 1µA
Number of channels: 1
Kind of package: reel; tape
Capacitance: 1.2pF
Application: automotive industry
на замовлення 2770 шт:
термін постачання 21-30 дні (днів)
Кількість Ціна
32+14.03 грн
39+10.59 грн
45+9.12 грн
57+7.26 грн
100+5.13 грн
500+3.66 грн
1000+3.31 грн
Мінімальне замовлення: 32
В кошику  од. на суму  грн.
D1213A-04TS-7 D1213A-04TS.pdf
D1213A-04TS-7
Виробник: DIODES INCORPORATED
Category: Protection diodes - arrays
Description: Diode: TVS array; 6V; 5A; unidirectional; TSOT26; Ch: 4; reel,tape
Type of diode: TVS array
Breakdown voltage: 6V
Max. forward impulse current: 5A
Semiconductor structure: unidirectional
Mounting: SMD
Case: TSOT26
Leakage current: 1µA
Number of channels: 4
Kind of package: reel; tape
Application: automotive industry
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D1213A-02S-7 D1213A-02S.pdf
Виробник: DIODES INCORPORATED
Category: Protection diodes - arrays
Description: Diode: TVS array; 6V; unidirectional; SC70,SOT353; Ch: 2; reel,tape
Type of diode: TVS array
Breakdown voltage: 6V
Semiconductor structure: unidirectional
Mounting: SMD
Case: SC70; SOT353
Max. off-state voltage: 3.3V
Leakage current: 1µA
Number of channels: 2
Kind of package: reel; tape
Capacitance: 1.2pF
Application: automotive industry
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D1213A-04SO-7 ds32144.pdf
Виробник: DIODES INCORPORATED
Category: Protection diodes - arrays
Description: Diode: TVS array; 6V; unidirectional; SOT23-6; Ch: 4; reel,tape
Case: SOT23-6
Mounting: SMD
Kind of package: reel; tape
Number of channels: 4
Max. off-state voltage: 3.3V
Breakdown voltage: 6V
Application: automotive industry
Semiconductor structure: unidirectional
Type of diode: TVS array
Capacitance: 1.2pF
Leakage current: 1µA
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D1213A-01LP-7B D1213A-01LP.pdf
Виробник: DIODES INCORPORATED
Category: Protection diodes - arrays
Description: Diode: TVS array; 6V; unidirectional; DFN1006-2; Ch: 1; reel,tape
Type of diode: TVS array
Breakdown voltage: 6V
Semiconductor structure: unidirectional
Mounting: SMD
Case: DFN1006-2
Max. off-state voltage: 3.3V
Leakage current: 1µA
Number of channels: 1
Kind of package: reel; tape
Capacitance: 1.2pF
Application: automotive industry
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D1213A-01LP4-7B D1213A-01LP4.pdf
Виробник: DIODES INCORPORATED
Category: Protection diodes - arrays
Description: Diode: TVS array; 6V; unidirectional; DFN1006-2; Ch: 1; reel,tape
Type of diode: TVS array
Breakdown voltage: 6V
Semiconductor structure: unidirectional
Mounting: SMD
Case: DFN1006-2
Max. off-state voltage: 3.3V
Leakage current: 1µA
Number of channels: 1
Kind of package: reel; tape
Capacitance: 1.2pF
Application: automotive industry
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D1213A-02WL-7 D1213A_02WL.pdf
Виробник: DIODES INCORPORATED
Category: Protection diodes - arrays
Description: Diode: TVS array; 6V; unidirectional; SOT323; Ch: 2; reel,tape
Type of diode: TVS array
Breakdown voltage: 6V
Semiconductor structure: unidirectional
Mounting: SMD
Case: SOT323
Max. off-state voltage: 3.3V
Leakage current: 1µA
Number of channels: 2
Kind of package: reel; tape
Capacitance: 1.2pF
Application: universal
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D1213A-01W-7 D1213A-01W.pdf
Виробник: DIODES INCORPORATED
Category: Protection diodes - arrays
Description: Diode: TVS array; 6V; unidirectional; SOT323; Ch: 1; reel,tape
Type of diode: TVS array
Breakdown voltage: 6V
Semiconductor structure: unidirectional
Mounting: SMD
Case: SOT323
Max. off-state voltage: 3.3V
Leakage current: 1µA
Number of channels: 1
Kind of package: reel; tape
Capacitance: 1.2pF
Application: automotive industry
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D1213A-02SO-7
Виробник: DIODES INCORPORATED
Category: Protection diodes - arrays
Description: Diode: TVS array; 6V; unidirectional; SOT23; Ch: 2; reel,tape
Type of diode: TVS array
Breakdown voltage: 6V
Semiconductor structure: unidirectional
Mounting: SMD
Case: SOT23
Max. off-state voltage: 3.3V
Leakage current: 1µA
Number of channels: 2
Kind of package: reel; tape
Capacitance: 1.2pF
Application: automotive industry
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D1213A-01LPQ-7B D1213A-01LPQ.pdf
Виробник: DIODES INCORPORATED
Category: Protection diodes - arrays
Description: Diode: TVS array; 6V; bidirectional; DFN1006-2; Ch: 1; reel,tape
Type of diode: TVS array
Breakdown voltage: 6V
Semiconductor structure: bidirectional
Mounting: SMD
Case: DFN1006-2
Max. off-state voltage: 3.3V
Leakage current: 1µA
Number of channels: 1
Kind of package: reel; tape
Capacitance: 1.2pF
Application: automotive industry
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D1213A-01T-7 D1213A-01T.pdf
Виробник: DIODES INCORPORATED
Category: Protection diodes - arrays
Description: Diode: TVS array; 6V; unidirectional; SOD523; Ch: 1; reel,tape
Type of diode: TVS array
Breakdown voltage: 6V
Semiconductor structure: unidirectional
Mounting: SMD
Case: SOD523
Max. off-state voltage: 3.3V
Leakage current: 1µA
Number of channels: 1
Kind of package: reel; tape
Capacitance: 1.2pF
Application: automotive industry
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D1213A-02SM-7 D1213A-02SM.pdf
Виробник: DIODES INCORPORATED
Category: Protection diodes - arrays
Description: Diode: TVS array; 6V; unidirectional; SOT25; Ch: 2; reel,tape
Type of diode: TVS array
Breakdown voltage: 6V
Semiconductor structure: unidirectional
Mounting: SMD
Case: SOT25
Max. off-state voltage: 3.3V
Leakage current: 1µA
Number of channels: 2
Kind of package: reel; tape
Capacitance: 1.2pF
Application: automotive industry
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D1213A-04MR-13 D1213A-04MR.pdf
Виробник: DIODES INCORPORATED
Category: Protection diodes - arrays
Description: Diode: TVS array; 6V; unidirectional; MSOP10; Ch: 4; reel,tape
Type of diode: TVS array
Breakdown voltage: 6V
Semiconductor structure: unidirectional
Mounting: SMD
Case: MSOP10
Max. off-state voltage: 3.3V
Leakage current: 1µA
Number of channels: 4
Kind of package: reel; tape
Capacitance: 1.2pF
Application: automotive industry
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D1213A-01WSQ-7 D1213A-01WSQ.pdf
Виробник: DIODES INCORPORATED
Category: Protection diodes - arrays
Description: D1213A-01WSQ-7
на замовлення 3000 шт:
термін постачання 21-30 дні (днів)
Кількість Ціна
3000+3.99 грн
Мінімальне замовлення: 3000
В кошику  од. на суму  грн.
SBR10200CTFP SBR10200CT-SBR10200CTFP.pdf
Виробник: DIODES INCORPORATED
Category: THT universal diodes
Description: Diode: rectifying; THT; 200V; 5Ax2; tube; Ifsm: 110A; ITO220AB; 20ns
Kind of package: tube
Semiconductor structure: common cathode; double
Case: ITO220AB
Type of diode: rectifying
Technology: SBR®
Mounting: THT
Reverse recovery time: 20ns
Load current: 5A x2
Max. load current: 10A
Max. forward impulse current: 110A
Max. off-state voltage: 200V
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AP1538SG-13 pVersion=0046&contRep=ZT&docId=005056AB752F1ED6B7AA8415CA325E28&compId=AP1538x-DTE.pdf?ci_sign=c9d433d1fb71e213d1f4ca9e8682434b417d8cb5
AP1538SG-13
Виробник: DIODES INCORPORATED
Category: Voltage regulators - DC/DC circuits
Description: PMIC; DC/DC converter; Uin: 3.6÷18VDC; Uout: 0.8÷18VDC; 3A; SMD
Type of integrated circuit: PMIC
Kind of integrated circuit: DC/DC converter
Input voltage: 3.6...18V DC
Output voltage: 0.8...18V DC
Output current: 3A
Case: SOP-8L-DEP
Mounting: SMD
Frequency: 300kHz
Topology: buck
Operating temperature: -20...85°C
Kind of package: reel; tape
Efficiency: 92%
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AS7815ADTR-G1 AS78XXA.pdf
Виробник: DIODES INCORPORATED
Category: Fixed voltage regulators
Description: IC: voltage regulator; linear,fixed; 15V; 1A; DPAK; SMD; AS78XXA
Type of integrated circuit: voltage regulator
Kind of voltage regulator: fixed; linear
Voltage drop: 2V
Output voltage: 15V
Output current: 1A
Case: DPAK
Mounting: SMD
Manufacturer series: AS78XXA
Kind of package: reel; tape
Operating temperature: -40...125°C
Tolerance: ±4%
Number of channels: 1
Input voltage: 17.9...30V
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DMT32M5LFG-13 DMT32M5LFG.pdf
Виробник: DIODES INCORPORATED
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 30V; 24A; Idm: 350A; 2.3W
Kind of channel: enhancement
Mounting: SMD
Type of transistor: N-MOSFET
Polarisation: unipolar
Gate charge: 67.7nC
On-state resistance: 2.6mΩ
Power dissipation: 2.3W
Drain current: 24A
Gate-source voltage: ±20V
Drain-source voltage: 30V
Pulsed drain current: 350A
Kind of package: 13 inch reel; tape
Case: PowerDI3333-8
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DMT32M5LFG-7 DMT32M5LFG.pdf
Виробник: DIODES INCORPORATED
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 30V; 24A; Idm: 350A; 2.3W
Kind of channel: enhancement
Mounting: SMD
Type of transistor: N-MOSFET
Polarisation: unipolar
Gate charge: 67.7nC
On-state resistance: 2.6mΩ
Power dissipation: 2.3W
Drain current: 24A
Gate-source voltage: ±20V
Drain-source voltage: 30V
Pulsed drain current: 350A
Kind of package: 7 inch reel; tape
Case: PowerDI3333-8
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DMT32M5LPS-13 DMT32M5LPS.pdf
Виробник: DIODES INCORPORATED
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 30V; 120A; Idm: 350A; 3.2W
Kind of channel: enhancement
Mounting: SMD
Type of transistor: N-MOSFET
Polarisation: unipolar
Gate charge: 68nC
On-state resistance: 3mΩ
Power dissipation: 3.2W
Drain current: 120A
Gate-source voltage: ±20V
Drain-source voltage: 30V
Pulsed drain current: 350A
Kind of package: 13 inch reel; tape
Case: PowerDI5060-8
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DMT69M5LCG-7
Виробник: DIODES INCORPORATED
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 60V; 11.7A; Idm: 208A; 2.64W
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 60V
Drain current: 11.7A
Pulsed drain current: 208A
Power dissipation: 2.64W
Case: V-DFN3333-8
Gate-source voltage: ±20V
On-state resistance: 12.5mΩ
Mounting: SMD
Gate charge: 28.4nC
Kind of package: 7 inch reel; tape
Kind of channel: enhancement
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DMT69M5LFVWQ-13
Виробник: DIODES INCORPORATED
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 60V; 11.9A; Idm: 160A; 2.74W
Kind of channel: enhancement
Mounting: SMD
Type of transistor: N-MOSFET
Polarisation: unipolar
Gate charge: 28.4nC
On-state resistance: 12.5mΩ
Power dissipation: 2.74W
Drain current: 11.9A
Gate-source voltage: ±20V
Drain-source voltage: 60V
Pulsed drain current: 160A
Kind of package: 13 inch reel; tape
Application: automotive industry
Case: PowerDI3333-8
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DMT10H4M5LPS-13 DMT10H4M5LPS.pdf
Виробник: DIODES INCORPORATED
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 100V; 15A; Idm: 400A; 2.3W
Kind of channel: enhancement
Mounting: SMD
Type of transistor: N-MOSFET
Polarisation: unipolar
Gate charge: 80nC
On-state resistance: 6.2mΩ
Power dissipation: 2.3W
Drain current: 15A
Gate-source voltage: ±20V
Drain-source voltage: 100V
Pulsed drain current: 400A
Kind of package: 13 inch reel; tape
Case: PowerDI5060-8
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