Продукція > DIODES INCORPORATED > Всі товари виробника DIODES INCORPORATED (74483) > Сторінка 1221 з 1242
| Фото | Назва | Виробник | Інформація | Доступність | Ціна без ПДВ | ||||||||||||||||
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| DMTH4004SK3-13 | DIODES INCORPORATED |
Category: SMD N channel transistorsDescription: Transistor: N-MOSFET; unipolar; 40V; 100A; 3.9W; TO252/DPAK Case: TO252/DPAK Drain current: 100A Drain-source voltage: 40V Type of transistor: N-MOSFET On-state resistance: 3.2mΩ Mounting: SMD Power dissipation: 3.9W Gate charge: 68.6nC Polarisation: unipolar |
товару немає в наявності |
Мінімальне замовлення: 2500 шт В кошику од. на суму грн. | |||||||||||||||||
| DMTH4004SK3Q-13 | DIODES INCORPORATED |
Category: SMD N channel transistorsDescription: Transistor: N-MOSFET; unipolar; 40V; 100A; 3.9W; TO252/DPAK Case: TO252/DPAK Drain current: 100A Drain-source voltage: 40V Application: automotive industry Type of transistor: N-MOSFET On-state resistance: 3.2mΩ Mounting: SMD Power dissipation: 3.9W Gate charge: 68.6nC Polarisation: unipolar |
товару немає в наявності |
Мінімальне замовлення: 2500 шт В кошику од. на суму грн. | |||||||||||||||||
| DST847BDJ-7 | DIODES INCORPORATED |
Category: NPN SMD transistorsDescription: Transistor: NPN x2; bipolar; 45V; 0.1A; 300mW; SOT963 Current gain: 200...470 Kind of package: reel; tape Case: SOT963 Frequency: 100...170MHz Collector current: 0.1A Mounting: SMD Manufacturer standard package: 3000pcs. Collector-emitter voltage: 45V Power dissipation: 0.3W Polarisation: bipolar Type of transistor: NPN x2 |
товару немає в наявності |
В кошику од. на суму грн. | |||||||||||||||||
| DST847BPDP6-7 | DIODES INCORPORATED |
Category: Complementary transistorsDescription: Transistor: NPN / PNP; bipolar; complementary pair; 45V; 0.1A Current gain: 200...470 Kind of package: reel; tape Case: SOT963 Frequency: 100...175MHz Collector current: 0.1A Mounting: SMD Manufacturer standard package: 3000pcs. Collector-emitter voltage: 45V Power dissipation: 0.3W Polarisation: bipolar Kind of transistor: complementary pair Type of transistor: NPN / PNP |
товару немає в наявності |
В кошику од. на суму грн. | |||||||||||||||||
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BZT52C20-7-F | DIODES INCORPORATED |
Category: SMD Zener diodesDescription: Diode: Zener; 0.37W; 20V; SMD; SOD123; single diode; reel,tape Type of diode: Zener Power dissipation: 0.37W Zener voltage: 20V Mounting: SMD Tolerance: ±6% Case: SOD123 Semiconductor structure: single diode Kind of package: reel; tape |
на замовлення 64 шт: термін постачання 14-30 дні (днів) |
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BZT52C20LP-7 | DIODES INCORPORATED |
Category: SMD Zener diodesDescription: Diode: Zener; 0.25W; 20V; SMD; X1-DFN1006-2; single diode Type of diode: Zener Power dissipation: 0.25W Zener voltage: 20V Mounting: SMD Tolerance: ±6% Case: X1-DFN1006-2 Semiconductor structure: single diode Kind of package: reel; tape |
на замовлення 2940 шт: термін постачання 14-30 дні (днів) |
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BZT52C20T-7 | DIODES INCORPORATED |
Category: SMD Zener diodesDescription: Diode: Zener; 0.3W; 20V; SMD; SOD523; single diode; reel,tape Type of diode: Zener Power dissipation: 0.3W Zener voltage: 20V Mounting: SMD Tolerance: ±6% Case: SOD523 Semiconductor structure: single diode Kind of package: reel; tape |
на замовлення 500 шт: термін постачання 14-30 дні (днів) |
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BZT52C20-13-F | DIODES INCORPORATED |
Category: SMD Zener diodesDescription: Diode: Zener; 0.37W; 20V; SMD; SOD123; single diode; reel,tape Type of diode: Zener Power dissipation: 0.37W Zener voltage: 20V Mounting: SMD Tolerance: ±6% Case: SOD123 Semiconductor structure: single diode Kind of package: reel; tape |
товару немає в наявності |
Мінімальне замовлення: 10000 шт В кошику од. на суму грн. | ||||||||||||||||
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BZT52C20Q-7-F | DIODES INCORPORATED |
Category: SMD Zener diodesDescription: Diode: Zener; 0.37W; 20V; SMD; SOD123; single diode; reel,tape Type of diode: Zener Power dissipation: 0.37W Zener voltage: 20V Mounting: SMD Tolerance: ±6% Case: SOD123 Semiconductor structure: single diode Kind of package: reel; tape Application: automotive industry |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||||||||||
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BZT52C20SQ-7-F | DIODES INCORPORATED |
Category: SMD Zener diodesDescription: Diode: Zener; 0.2W; 20V; SMD; SOD323; single diode; reel,tape Case: SOD323 Mounting: SMD Kind of package: reel; tape Tolerance: ±6% Power dissipation: 0.2W Application: automotive industry Semiconductor structure: single diode Zener voltage: 20V Type of diode: Zener |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||||||||||
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BZT52C20TQ-7-F | DIODES INCORPORATED |
Category: SMD Zener diodesDescription: Diode: Zener; 0.3W; 20V; SMD; SOD523; single diode; reel,tape Type of diode: Zener Power dissipation: 0.3W Zener voltage: 20V Mounting: SMD Tolerance: ±6% Case: SOD523 Semiconductor structure: single diode Kind of package: reel; tape Application: automotive industry |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||||||||||
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1SMB5955B-13 | DIODES INCORPORATED |
Category: SMD Zener diodesDescription: Diode: Zener; 3W; 180V; SMD; SMB; single diode; reel,tape Tolerance: ±5% Mounting: SMD Power dissipation: 3W Kind of package: reel; tape Semiconductor structure: single diode Case: SMB Zener voltage: 180V Type of diode: Zener |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||||||||||
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DMN6070SSD-13 | DIODES INCORPORATED |
Category: Multi channel transistorsDescription: Transistor: N-MOSFET x2; unipolar; 60V; 3.6A; 1.2W; SO8 Case: SO8 Mounting: SMD Kind of package: 13 inch reel; tape Power dissipation: 1.2W Polarisation: unipolar Drain current: 3.6A Kind of channel: enhancement Drain-source voltage: 60V Type of transistor: N-MOSFET x2 Gate-source voltage: ±20V On-state resistance: 0.1Ω |
на замовлення 2350 шт: термін постачання 14-30 дні (днів) |
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AZ1117IH-1.2TRG1 | DIODES INCORPORATED |
Category: LDO fixed voltage regulatorsDescription: IC: voltage regulator; LDO,linear,fixed; 1.2V; 1A; SOT223; SMD Type of integrated circuit: voltage regulator Kind of voltage regulator: fixed; LDO; linear Voltage drop: 1.3V Output voltage: 1.2V Output current: 1A Case: SOT223 Mounting: SMD Manufacturer series: AZ1117I Kind of package: reel; tape Operating temperature: -40...125°C Tolerance: ±1% Number of channels: 1 Input voltage: 1.5...10V |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||||||||||
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AZ1117IH-1.8TRG1 | DIODES INCORPORATED |
Category: LDO fixed voltage regulatorsDescription: IC: voltage regulator; LDO,linear,fixed; 1.8V; 1A; SOT223; SMD Type of integrated circuit: voltage regulator Kind of voltage regulator: fixed; LDO; linear Voltage drop: 1.3V Output voltage: 1.8V Output current: 1A Case: SOT223 Mounting: SMD Manufacturer series: AZ1117I Kind of package: reel; tape Operating temperature: -40...125°C Tolerance: ±1% Number of channels: 1 Input voltage: 1.5...10V |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||||||||||
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AZ1117IH-1.5TRG1 | DIODES INCORPORATED |
Category: LDO fixed voltage regulatorsDescription: IC: voltage regulator; LDO,linear,fixed; 1.5V; 1A; SOT223; SMD Type of integrated circuit: voltage regulator Kind of voltage regulator: fixed; LDO; linear Voltage drop: 1.3V Output voltage: 1.5V Output current: 1A Case: SOT223 Mounting: SMD Kind of package: reel; tape Operating temperature: -40...125°C Tolerance: ±1% Number of channels: 1 Input voltage: 1.5...10V |
товару немає в наявності |
Мінімальне замовлення: 4000 шт В кошику од. на суму грн. | ||||||||||||||||
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AZ1117IH-2.5TRG1 | DIODES INCORPORATED |
Category: LDO fixed voltage regulatorsDescription: IC: voltage regulator; LDO,linear,fixed; 2.5V; 1A; SOT223; SMD Type of integrated circuit: voltage regulator Kind of voltage regulator: fixed; LDO; linear Voltage drop: 1.3V Output voltage: 2.5V Output current: 1A Case: SOT223 Mounting: SMD Kind of package: reel; tape Operating temperature: -40...125°C Tolerance: ±1% Number of channels: 1 Input voltage: 1.5...10V |
товару немає в наявності |
Мінімальне замовлення: 4000 шт В кошику од. на суму грн. | ||||||||||||||||
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DFLS140-7 | DIODES INCORPORATED |
Category: SMD Schottky diodesDescription: Diode: Schottky rectifying; PowerDI®123; SMD; 40V; 1.1A; reel,tape Type of diode: Schottky rectifying Case: PowerDI®123 Mounting: SMD Max. off-state voltage: 40V Load current: 1.1A Semiconductor structure: single diode Capacitance: 28pF Max. forward voltage: 0.53V Leakage current: 6mA Max. forward impulse current: 40A Kind of package: reel; tape Power dissipation: 556mW |
на замовлення 2302 шт: термін постачання 14-30 дні (днів) |
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DMN2056U-13 | DIODES INCORPORATED |
Category: SMD N channel transistorsDescription: Transistor: N-MOSFET; unipolar; 20V; 3.2A; Idm: 22A; 940mW; SOT23 Type of transistor: N-MOSFET Polarisation: unipolar Drain-source voltage: 20V Drain current: 3.2A Power dissipation: 0.94W Case: SOT23 Gate-source voltage: ±8V On-state resistance: 85mΩ Mounting: SMD Kind of package: 13 inch reel; tape Kind of channel: enhancement Pulsed drain current: 22A Gate charge: 4.3nC |
товару немає в наявності |
Мінімальне замовлення: 10000 шт В кошику од. на суму грн. | ||||||||||||||||
| ZXTC6720MCTA | DIODES INCORPORATED |
Category: Complementary transistorsDescription: Transistor: NPN / PNP; bipolar; complementary pair; 80/70V; 4/3A Power dissipation: 2.45W Polarisation: bipolar Kind of transistor: complementary pair Pulsed collector current: 5A Type of transistor: NPN / PNP Current gain: 10...900 Kind of package: reel; tape Case: WDFN3020-8 Frequency: 100...160MHz Collector current: 4/3A Mounting: SMD Manufacturer standard package: 3000pcs. Collector-emitter voltage: 80/70V |
товару немає в наявності |
В кошику од. на суму грн. | |||||||||||||||||
| MURS320-13-F | DIODES INCORPORATED |
Category: SMD universal diodesDescription: Diode: rectifying; SMD; 200V; 3A; 25ns; SMC; Ufmax: 875mV; reel,tape Type of diode: rectifying Mounting: SMD Max. off-state voltage: 200V Load current: 3A Reverse recovery time: 25ns Semiconductor structure: single diode Case: SMC Max. forward voltage: 0.875V Kind of package: reel; tape |
товару немає в наявності |
В кошику од. на суму грн. | |||||||||||||||||
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DMN3150L-7 | DIODES INCORPORATED |
Category: SMD N channel transistorsDescription: Transistor: N-MOSFET; unipolar; 30V; 3.1A; Idm: 15A; 1.4W; SOT23 Mounting: SMD Pulsed drain current: 15A Power dissipation: 1.4W Polarisation: unipolar Drain current: 3.1A Kind of channel: enhancement Drain-source voltage: 30V Type of transistor: N-MOSFET Gate-source voltage: ±12V Kind of package: 7 inch reel; tape Case: SOT23 On-state resistance: 54mΩ |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||||||||||
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DMN3150LW-7 | DIODES INCORPORATED |
Category: SMD N channel transistorsDescription: Transistor: N-MOSFET; unipolar; 28V; 1.2A; Idm: 6.4A; 350mW; SOT323 Mounting: SMD Pulsed drain current: 6.4A Power dissipation: 0.35W Polarisation: unipolar Drain current: 1.2A Kind of channel: enhancement Drain-source voltage: 28V Type of transistor: N-MOSFET Gate-source voltage: ±12V Kind of package: 7 inch reel; tape Case: SOT323 On-state resistance: 138mΩ |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||||||||||
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FMMT455TA | DIODES INCORPORATED |
Category: NPN SMD transistorsDescription: Transistor: NPN; bipolar; 140V; 1A; 500mW; SOT23 Type of transistor: NPN Polarisation: bipolar Collector-emitter voltage: 140V Collector current: 1A Power dissipation: 0.5W Case: SOT23 Mounting: SMD Kind of package: reel; tape Frequency: 100MHz Manufacturer standard package: 3000pcs. |
на замовлення 232 шт: термін постачання 14-30 дні (днів) |
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AL5809-120P1-7 | DIODES INCORPORATED |
Category: LED driversDescription: IC: driver; current regulator,LED driver; PowerDI®123; 120mA Type of integrated circuit: driver Kind of integrated circuit: current regulator; LED driver Case: PowerDI®123 Output current: 0.12A Number of channels: 1 Mounting: SMD Operating temperature: -40...125°C Operating voltage: 2.5...60V DC Kind of package: reel; tape Integrated circuit features: linear dimming; PWM |
на замовлення 1095 шт: термін постачання 14-30 дні (днів) |
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DMN2058UW-13 | DIODES INCORPORATED |
Category: SMD N channel transistorsDescription: Transistor: N-MOSFET; unipolar; 20V; 3A; Idm: 20A; 700mW; SOT323 Type of transistor: N-MOSFET Polarisation: unipolar Drain-source voltage: 20V Drain current: 3A Pulsed drain current: 20A Power dissipation: 0.7W Case: SOT323 Gate-source voltage: ±12V On-state resistance: 91mΩ Mounting: SMD Gate charge: 7.7nC Kind of package: 13 inch reel; tape Kind of channel: enhancement |
товару немає в наявності |
Мінімальне замовлення: 10000 шт В кошику од. на суму грн. | ||||||||||||||||
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DMN2058U-13 | DIODES INCORPORATED |
Category: SMD N channel transistorsDescription: Transistor: N-MOSFET; unipolar; 20V; 3.7A; Idm: 24A; 1.13W; SOT23 Type of transistor: N-MOSFET Polarisation: unipolar Drain-source voltage: 20V Drain current: 3.7A Pulsed drain current: 24A Power dissipation: 1.13W Case: SOT23 Gate-source voltage: ±12V On-state resistance: 91mΩ Mounting: SMD Gate charge: 7.7nC Kind of package: 13 inch reel; tape Kind of channel: enhancement |
товару немає в наявності |
Мінімальне замовлення: 10000 шт В кошику од. на суму грн. | ||||||||||||||||
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FMMT618QTA | DIODES INCORPORATED |
Category: NPN SMD transistorsDescription: Transistor: NPN; bipolar; 20V; 2.5A; 806mW; SOT23 Type of transistor: NPN Polarisation: bipolar Collector-emitter voltage: 20V Collector current: 2.5A Power dissipation: 0.806W Case: SOT23 Pulsed collector current: 6A Mounting: SMD Kind of package: reel; tape Frequency: 140MHz Manufacturer standard package: 3000pcs. Application: automotive industry |
на замовлення 2771 шт: термін постачання 14-30 дні (днів) |
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fmmt717 | DIODES INCORPORATED |
Category: PNP SMD transistorsDescription: Transistor: PNP; bipolar; 12V; 2.5A; 625mW; SOT23 Type of transistor: PNP Polarisation: bipolar Collector-emitter voltage: 12V Collector current: 2.5A Power dissipation: 0.625W Case: SOT23 Mounting: SMD Kind of package: reel; tape Quantity in set/package: 3000pcs. |
товару немає в наявності |
Мінімальне замовлення: 5 шт В кошику од. на суму грн. | ||||||||||||||||
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FMMT717TA | DIODES INCORPORATED |
Category: PNP SMD transistorsDescription: Transistor: PNP; bipolar; 12V; 2.5A; 625mW; SOT23 Type of transistor: PNP Polarisation: bipolar Collector-emitter voltage: 12V Collector current: 2.5A Power dissipation: 0.625W Case: SOT23 Mounting: SMD Kind of package: reel; tape Manufacturer standard package: 3000pcs. |
на замовлення 305 шт: термін постачання 14-30 дні (днів) |
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FMMT717QTA | DIODES INCORPORATED |
Category: PNP SMD transistorsDescription: Transistor: PNP; bipolar; 12V; 2.5A; 806mW; SOT23 Type of transistor: PNP Polarisation: bipolar Collector-emitter voltage: 12V Collector current: 2.5A Power dissipation: 0.806W Case: SOT23 Mounting: SMD Kind of package: reel; tape Manufacturer standard package: 3000pcs. Pulsed collector current: 10A Application: automotive industry Current gain: 45...475 Frequency: 80...110MHz |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||||||||||
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SDM20N40A-7 | DIODES INCORPORATED |
Category: SMD Schottky diodesDescription: Diode: Schottky switching; SOT23; SMD; 40V; 0.2A; reel,tape; 200mW Case: SOT23 Mounting: SMD Max. forward voltage: 0.55V Power dissipation: 0.2W Max. off-state voltage: 40V Load current: 0.2A Kind of package: reel; tape Semiconductor structure: common anode; double Leakage current: 3mA Capacitance: 50pF Type of diode: Schottky switching Max. forward impulse current: 1A |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||||||||||
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PAM2312AABADJ | DIODES INCORPORATED |
Category: Voltage regulators - DC/DC circuitsDescription: PMIC; DC/DC converter; Uin: 2.5÷5.5VDC; 1A; TSOT25; SMD; 1.5MHz Operating temperature: -40...85°C Input voltage: 2.5...5.5V DC Output current: 1A Type of integrated circuit: PMIC Efficiency: 96% Kind of package: reel; tape Case: TSOT25 Kind of integrated circuit: DC/DC converter Frequency: 1.5MHz Topology: buck Mounting: SMD |
на замовлення 8770 шт: термін постачання 14-30 дні (днів) |
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ZVP0545GTA | DIODES INCORPORATED |
Category: SMD P channel transistorsDescription: Transistor: P-MOSFET; unipolar; -450V; -0.075A; Idm: -150mA; 2W Type of transistor: P-MOSFET Polarisation: unipolar Drain-source voltage: -450V Drain current: -0.075A Pulsed drain current: -150mA Power dissipation: 2W Case: SOT223 Gate-source voltage: ±20V On-state resistance: 150Ω Mounting: SMD Kind of package: reel; tape Kind of channel: enhancement |
на замовлення 17 шт: термін постачання 14-30 дні (днів) |
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DMN2075U-7 | DIODES INCORPORATED |
Category: SMD N channel transistorsDescription: Transistor: N-MOSFET; unipolar; 20V; 3.4A; 0.8W; SOT23 Type of transistor: N-MOSFET Polarisation: unipolar Drain-source voltage: 20V Drain current: 3.4A Power dissipation: 0.8W Case: SOT23 Gate-source voltage: ±8V On-state resistance: 45mΩ Mounting: SMD Kind of package: reel; tape Kind of channel: enhancement |
товару немає в наявності |
Мінімальне замовлення: 5 шт В кошику од. на суму грн. | ||||||||||||||||
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DMN2075UDW-7 | DIODES INCORPORATED |
Category: SMD N channel transistorsDescription: Transistor: N-MOSFET; unipolar; 20V; 2.5A; Idm: 20A; 580mW; SOT363 Type of transistor: N-MOSFET Polarisation: unipolar Drain-source voltage: 20V Drain current: 2.5A Pulsed drain current: 20A Power dissipation: 0.58W Case: SOT363 Gate-source voltage: ±8V On-state resistance: 0.1Ω Mounting: SMD Gate charge: 7nC Kind of package: 7 inch reel; tape Kind of channel: enhancement |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||||||||||
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2DB1182Q-13 | DIODES INCORPORATED |
Category: PNP SMD transistorsDescription: Transistor: PNP; bipolar; 32V; 2A; 15W; DPAK,TO252 Type of transistor: PNP Polarisation: bipolar Collector-emitter voltage: 32V Collector current: 2A Power dissipation: 15W Case: DPAK; TO252 Current gain: 120...270 Mounting: SMD Kind of package: reel; tape Application: automotive industry Manufacturer standard package: 2500pcs. Pulsed collector current: 3A Frequency: 110MHz |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||||||||||
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B220AQ-13-F | DIODES INCORPORATED |
Category: SMD Schottky diodesDescription: Diode: Schottky rectifying; SMA; SMD; 20V; 2A; reel,tape Type of diode: Schottky rectifying Max. off-state voltage: 20V Max. forward impulse current: 50A Semiconductor structure: single diode Case: SMA Mounting: SMD Leakage current: 20mA Kind of package: reel; tape Application: automotive industry Load current: 2A Capacitance: 0.2nF Max. forward voltage: 0.5V |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||||||||||
| B220AF-13 | DIODES INCORPORATED |
Category: SMD Schottky diodesDescription: Diode: Schottky rectifying; SMA flat; SMD; 20V; 2A; reel,tape Type of diode: Schottky rectifying Max. off-state voltage: 20V Max. forward impulse current: 50A Semiconductor structure: single diode Case: SMA flat Mounting: SMD Leakage current: 16mA Kind of package: reel; tape Load current: 2A Capacitance: 93pF Max. forward voltage: 0.5V |
товару немає в наявності |
Мінімальне замовлення: 10000 шт В кошику од. на суму грн. | |||||||||||||||||
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D5V0L1B2WS-7 | DIODES INCORPORATED |
Category: Bidirectional TVS SMD diodesDescription: Diode: TVS; 84W; 6÷8V; 6A; bidirectional; SOD323; Ch: 1; reel,tape Type of diode: TVS Peak pulse power dissipation: 84W Max. off-state voltage: 5V Breakdown voltage: 6...8V Max. forward impulse current: 6A Semiconductor structure: bidirectional Case: SOD323 Mounting: SMD Leakage current: 0.1µA Kind of package: reel; tape Number of channels: 1 |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||||||||||
| DMN3013LDG-7 | DIODES INCORPORATED |
Category: SMD N channel transistors Description: Transistor: N-MOSFET; unipolar; 30V; 7.6A; Idm: 80A; 1.25W Case: PowerDI3333-8 Mounting: SMD Kind of package: 7 inch reel; tape Pulsed drain current: 80A Power dissipation: 1.25W Gate charge: 5.7nC Polarisation: unipolar Drain current: 7.6A Kind of channel: enhancement Drain-source voltage: 30V Type of transistor: N-MOSFET Gate-source voltage: ±10V On-state resistance: 17.7mΩ |
товару немає в наявності |
В кошику од. на суму грн. | |||||||||||||||||
| DMNH4005SPSQ-13 | DIODES INCORPORATED |
Category: SMD N channel transistorsDescription: Transistor: N-MOSFET; unipolar; 40V; 100A; Idm: 150A; 2.8W Mounting: SMD Pulsed drain current: 150A Power dissipation: 2.8W Gate charge: 48nC Polarisation: unipolar Drain current: 100A Kind of channel: enhancement Drain-source voltage: 40V Application: automotive industry Type of transistor: N-MOSFET Gate-source voltage: ±20V Kind of package: 13 inch reel; tape Case: PowerDI5060-8 On-state resistance: 4mΩ |
товару немає в наявності |
Мінімальне замовлення: 2500 шт В кошику од. на суму грн. | |||||||||||||||||
| DMTH4005SPS-13 | DIODES INCORPORATED |
Category: SMD N channel transistorsDescription: Transistor: N-MOSFET; unipolar; 40V; 100A; Idm: 320A; 150W Mounting: SMD Pulsed drain current: 320A Power dissipation: 150W Gate charge: 49.1nC Polarisation: unipolar Drain current: 100A Kind of channel: enhancement Drain-source voltage: 40V Type of transistor: N-MOSFET Gate-source voltage: ±20V Kind of package: 13 inch reel; tape Case: PowerDI5060-8 On-state resistance: 3.7mΩ |
товару немає в наявності |
В кошику од. на суму грн. | |||||||||||||||||
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AP22652AW6-7 | DIODES INCORPORATED |
Category: Power switches - integrated circuitsDescription: IC: power switch; high-side,USB switch; 2.1A; Ch: 1; P-Channel; SMD Mounting: SMD Supply voltage: 2.7...5.5V DC Active logical level: low Output current: 2.1A Type of integrated circuit: power switch Kind of output: P-Channel Kind of package: reel; tape Case: SOT26 Kind of integrated circuit: high-side; USB switch Number of channels: 1 On-state resistance: 65mΩ |
на замовлення 189 шт: термін постачання 14-30 дні (днів) |
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GBU808 | DIODES INCORPORATED |
Category: Flat single phase diode bridge rectif.Description: Bridge rectifier: single-phase; Urmax: 800V; If: 8A; Ifsm: 200A Type of bridge rectifier: single-phase Max. off-state voltage: 0.8kV Load current: 8A Max. forward impulse current: 200A Version: flat Case: GBU Electrical mounting: THT Leads: flat pin Kind of package: tube Features of semiconductor devices: glass passivated |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||||||||||
| SBRT20M60SP5-7 | DIODES INCORPORATED |
Category: SMD Schottky diodesDescription: Diode: Schottky rectifying; PowerDI®5; Trench SBR®; SMD; 60V; 20A Type of diode: Schottky rectifying Case: PowerDI®5 Technology: Trench SBR® Mounting: SMD Max. off-state voltage: 60V Load current: 20A Semiconductor structure: single diode Max. forward voltage: 0.57V Leakage current: 40µA Max. forward impulse current: 0.32kA Kind of package: reel; tape |
товару немає в наявності |
В кошику од. на суму грн. | |||||||||||||||||
| SBRT20M60SP5-7D | DIODES INCORPORATED |
Category: SMD Schottky diodesDescription: Diode: Schottky rectifying; PowerDI®5; Trench SBR®; SMD; 60V; 20A Type of diode: Schottky rectifying Case: PowerDI®5 Technology: Trench SBR® Mounting: SMD Max. off-state voltage: 60V Load current: 20A Semiconductor structure: single diode Max. forward voltage: 0.57V Leakage current: 40µA Max. forward impulse current: 0.32kA Kind of package: reel; tape |
товару немає в наявності |
В кошику од. на суму грн. | |||||||||||||||||
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AS358AMTR-E1 | DIODES INCORPORATED |
Category: SMD operational amplifiersDescription: IC: operational amplifier; Ch: 2; 3÷36VDC; SO8; Features: low power Type of integrated circuit: operational amplifier Number of channels: 2 Mounting: SMT Voltage supply range: 3...36V DC Case: SO8 Operating temperature: -40...85°C Integrated circuit features: low power Input offset voltage: 5mV Kind of package: reel; tape Input bias current: 0.2µA Input offset current: 100nA |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||||||||||
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ZXMN6A25KTC | DIODES INCORPORATED |
Category: SMD N channel transistorsDescription: Transistor: N-MOSFET; unipolar; 60V; 9A; 4.25W; DPAK Type of transistor: N-MOSFET Polarisation: unipolar Drain-source voltage: 60V Drain current: 9A Power dissipation: 4.25W Case: DPAK Gate-source voltage: ±20V On-state resistance: 70mΩ Mounting: SMD Kind of package: reel; tape Kind of channel: enhancement |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||||||||||
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SMAZ33-13-F | DIODES INCORPORATED |
Category: SMD Zener diodesDescription: Diode: Zener; 1W; 33V; SMD; SMA; single diode; reel,tape Type of diode: Zener Power dissipation: 1W Zener voltage: 33V Mounting: SMD Tolerance: ±5% Case: SMA Semiconductor structure: single diode Kind of package: reel; tape |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||||||||||
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SMBJ8.0CA-13-F | DIODES INCORPORATED |
Category: Bidirectional TVS SMD diodesDescription: Diode: TVS; 0.6kW; 8.89÷10.23V; 44.1A; bidirectional; SMB Type of diode: TVS Peak pulse power dissipation: 0.6kW Max. off-state voltage: 8V Breakdown voltage: 8.89...10.23V Max. forward impulse current: 44.1A Semiconductor structure: bidirectional Case: SMB Mounting: SMD Leakage current: 0.1mA Features of semiconductor devices: glass passivated Kind of package: reel; tape |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||||||||||
|
MBR180S1-7 | DIODES INCORPORATED |
Category: SMD Schottky diodesDescription: Diode: Schottky rectifying; SOD123; SMD; 80V; 1A; reel,tape Type of diode: Schottky rectifying Case: SOD123 Mounting: SMD Max. off-state voltage: 80V Load current: 1A Semiconductor structure: single diode Max. forward voltage: 0.8V Max. forward impulse current: 24A Kind of package: reel; tape |
на замовлення 151 шт: термін постачання 14-30 дні (днів) |
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| DMT8008LFG-7 | DIODES INCORPORATED |
Category: SMD N channel transistorsDescription: Transistor: N-MOSFET; unipolar; 80V; 13A; Idm: 192A; 2.5W Case: PowerDI3333-8 Kind of package: 7 inch reel; tape Drain current: 13A Kind of channel: enhancement Drain-source voltage: 80V Type of transistor: N-MOSFET Gate-source voltage: ±20V On-state resistance: 10.4mΩ Mounting: SMD Pulsed drain current: 192A Power dissipation: 2.5W Gate charge: 37.7nC Polarisation: unipolar |
товару немає в наявності |
Мінімальне замовлення: 2000 шт В кошику од. на суму грн. | |||||||||||||||||
| DMT8008LFG-13 | DIODES INCORPORATED |
Category: SMD N channel transistorsDescription: Transistor: N-MOSFET; unipolar; 80V; 13A; Idm: 192A; 2.5W Case: PowerDI3333-8 Kind of package: 13 inch reel; tape Drain current: 13A Kind of channel: enhancement Drain-source voltage: 80V Type of transistor: N-MOSFET Gate-source voltage: ±20V On-state resistance: 10.4mΩ Mounting: SMD Pulsed drain current: 192A Power dissipation: 2.5W Gate charge: 37.7nC Polarisation: unipolar |
товару немає в наявності |
Мінімальне замовлення: 3000 шт В кошику од. на суму грн. | |||||||||||||||||
| DMT8008LPS-13 | DIODES INCORPORATED |
Category: SMD N channel transistorsDescription: Transistor: N-MOSFET; unipolar; 80V; 66A; Idm: 330A; 2.8W Case: PowerDI5060-8 Kind of package: 13 inch reel; tape Drain current: 66A Kind of channel: enhancement Drain-source voltage: 80V Type of transistor: N-MOSFET Gate-source voltage: ±20V On-state resistance: 11mΩ Mounting: SMD Pulsed drain current: 330A Power dissipation: 2.8W Gate charge: 41.2nC Polarisation: unipolar |
товару немає в наявності |
Мінімальне замовлення: 2500 шт В кошику од. на суму грн. | |||||||||||||||||
| DMT8008SPS-13 | DIODES INCORPORATED |
Category: SMD N channel transistorsDescription: Transistor: N-MOSFET; unipolar; 80V; 66A; Idm: 330A; 2.8W Case: PowerDI5060-8 Kind of package: 13 inch reel; tape Drain current: 66A Kind of channel: enhancement Drain-source voltage: 80V Type of transistor: N-MOSFET Gate-source voltage: ±20V On-state resistance: 11mΩ Mounting: SMD Pulsed drain current: 330A Power dissipation: 2.8W Gate charge: 34nC Polarisation: unipolar |
товару немає в наявності |
Мінімальне замовлення: 2500 шт В кошику од. на суму грн. | |||||||||||||||||
| DMT8030LFDF-7 | DIODES INCORPORATED |
Category: SMD N channel transistors Description: Transistor: N-MOSFET; unipolar; 80V; 2.2W; DFN2020-6 Case: DFN2020-6 Drain-source voltage: 80V Type of transistor: N-MOSFET On-state resistance: 25mΩ Mounting: SMD Power dissipation: 2.2W Gate charge: 5.4nC Polarisation: unipolar |
товару немає в наявності |
Мінімальне замовлення: 3000 шт В кошику од. на суму грн. | |||||||||||||||||
| 2DA1774Q-7-F | DIODES INCORPORATED |
Category: PNP SMD transistorsDescription: Transistor: PNP; bipolar; 50V; 0.15A; 150mW; SOT523 Mounting: SMD Manufacturer standard package: 3000pcs. Collector-emitter voltage: 50V Power dissipation: 0.15W Polarisation: bipolar Application: automotive industry Type of transistor: PNP Current gain: 120...560 Kind of package: reel; tape Case: SOT523 Frequency: 140MHz Collector current: 0.15A |
товару немає в наявності |
В кошику од. на суму грн. | |||||||||||||||||
| 2DA1774QLP-7 | DIODES INCORPORATED |
Category: PNP SMD transistorsDescription: Transistor: PNP; bipolar; 40V; 0.1A; 1W; X1-DFN1006-3 Mounting: SMD Manufacturer standard package: 3000pcs. Collector-emitter voltage: 40V Power dissipation: 1W Polarisation: bipolar Pulsed collector current: 0.2A Application: automotive industry Type of transistor: PNP Current gain: 120...270 Kind of package: reel; tape Case: X1-DFN1006-3 Frequency: 100MHz Collector current: 0.1A |
товару немає в наявності |
В кошику од. на суму грн. | |||||||||||||||||
| 2DA1774QLP-7B | DIODES INCORPORATED |
Category: PNP SMD transistorsDescription: Transistor: PNP; bipolar; 40V; 0.1A; 1W; X1-DFN1006-3 Mounting: SMD Manufacturer standard package: 10000pcs. Collector-emitter voltage: 40V Power dissipation: 1W Polarisation: bipolar Pulsed collector current: 0.2A Application: automotive industry Type of transistor: PNP Current gain: 120...270 Kind of package: reel; tape Case: X1-DFN1006-3 Frequency: 100MHz Collector current: 0.1A |
товару немає в наявності |
Мінімальне замовлення: 10000 шт В кошику од. на суму грн. |
| DMTH4004SK3-13 |
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Виробник: DIODES INCORPORATED
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 40V; 100A; 3.9W; TO252/DPAK
Case: TO252/DPAK
Drain current: 100A
Drain-source voltage: 40V
Type of transistor: N-MOSFET
On-state resistance: 3.2mΩ
Mounting: SMD
Power dissipation: 3.9W
Gate charge: 68.6nC
Polarisation: unipolar
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 40V; 100A; 3.9W; TO252/DPAK
Case: TO252/DPAK
Drain current: 100A
Drain-source voltage: 40V
Type of transistor: N-MOSFET
On-state resistance: 3.2mΩ
Mounting: SMD
Power dissipation: 3.9W
Gate charge: 68.6nC
Polarisation: unipolar
товару немає в наявності
Мінімальне замовлення: 2500 шт
В кошику
од. на суму грн.
| DMTH4004SK3Q-13 |
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Виробник: DIODES INCORPORATED
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 40V; 100A; 3.9W; TO252/DPAK
Case: TO252/DPAK
Drain current: 100A
Drain-source voltage: 40V
Application: automotive industry
Type of transistor: N-MOSFET
On-state resistance: 3.2mΩ
Mounting: SMD
Power dissipation: 3.9W
Gate charge: 68.6nC
Polarisation: unipolar
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 40V; 100A; 3.9W; TO252/DPAK
Case: TO252/DPAK
Drain current: 100A
Drain-source voltage: 40V
Application: automotive industry
Type of transistor: N-MOSFET
On-state resistance: 3.2mΩ
Mounting: SMD
Power dissipation: 3.9W
Gate charge: 68.6nC
Polarisation: unipolar
товару немає в наявності
Мінімальне замовлення: 2500 шт
В кошику
од. на суму грн.
| DST847BDJ-7 |
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Виробник: DIODES INCORPORATED
Category: NPN SMD transistors
Description: Transistor: NPN x2; bipolar; 45V; 0.1A; 300mW; SOT963
Current gain: 200...470
Kind of package: reel; tape
Case: SOT963
Frequency: 100...170MHz
Collector current: 0.1A
Mounting: SMD
Manufacturer standard package: 3000pcs.
Collector-emitter voltage: 45V
Power dissipation: 0.3W
Polarisation: bipolar
Type of transistor: NPN x2
Category: NPN SMD transistors
Description: Transistor: NPN x2; bipolar; 45V; 0.1A; 300mW; SOT963
Current gain: 200...470
Kind of package: reel; tape
Case: SOT963
Frequency: 100...170MHz
Collector current: 0.1A
Mounting: SMD
Manufacturer standard package: 3000pcs.
Collector-emitter voltage: 45V
Power dissipation: 0.3W
Polarisation: bipolar
Type of transistor: NPN x2
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В кошику
од. на суму грн.
| DST847BPDP6-7 |
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Виробник: DIODES INCORPORATED
Category: Complementary transistors
Description: Transistor: NPN / PNP; bipolar; complementary pair; 45V; 0.1A
Current gain: 200...470
Kind of package: reel; tape
Case: SOT963
Frequency: 100...175MHz
Collector current: 0.1A
Mounting: SMD
Manufacturer standard package: 3000pcs.
Collector-emitter voltage: 45V
Power dissipation: 0.3W
Polarisation: bipolar
Kind of transistor: complementary pair
Type of transistor: NPN / PNP
Category: Complementary transistors
Description: Transistor: NPN / PNP; bipolar; complementary pair; 45V; 0.1A
Current gain: 200...470
Kind of package: reel; tape
Case: SOT963
Frequency: 100...175MHz
Collector current: 0.1A
Mounting: SMD
Manufacturer standard package: 3000pcs.
Collector-emitter voltage: 45V
Power dissipation: 0.3W
Polarisation: bipolar
Kind of transistor: complementary pair
Type of transistor: NPN / PNP
товару немає в наявності
В кошику
од. на суму грн.
| BZT52C20-7-F |
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Виробник: DIODES INCORPORATED
Category: SMD Zener diodes
Description: Diode: Zener; 0.37W; 20V; SMD; SOD123; single diode; reel,tape
Type of diode: Zener
Power dissipation: 0.37W
Zener voltage: 20V
Mounting: SMD
Tolerance: ±6%
Case: SOD123
Semiconductor structure: single diode
Kind of package: reel; tape
Category: SMD Zener diodes
Description: Diode: Zener; 0.37W; 20V; SMD; SOD123; single diode; reel,tape
Type of diode: Zener
Power dissipation: 0.37W
Zener voltage: 20V
Mounting: SMD
Tolerance: ±6%
Case: SOD123
Semiconductor structure: single diode
Kind of package: reel; tape
на замовлення 64 шт:
термін постачання 14-30 дні (днів)
| Кількість | Ціна без ПДВ |
|---|---|
| 46+ | 9.88 грн |
| 64+ | 6.68 грн |
| BZT52C20LP-7 |
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Виробник: DIODES INCORPORATED
Category: SMD Zener diodes
Description: Diode: Zener; 0.25W; 20V; SMD; X1-DFN1006-2; single diode
Type of diode: Zener
Power dissipation: 0.25W
Zener voltage: 20V
Mounting: SMD
Tolerance: ±6%
Case: X1-DFN1006-2
Semiconductor structure: single diode
Kind of package: reel; tape
Category: SMD Zener diodes
Description: Diode: Zener; 0.25W; 20V; SMD; X1-DFN1006-2; single diode
Type of diode: Zener
Power dissipation: 0.25W
Zener voltage: 20V
Mounting: SMD
Tolerance: ±6%
Case: X1-DFN1006-2
Semiconductor structure: single diode
Kind of package: reel; tape
на замовлення 2940 шт:
термін постачання 14-30 дні (днів)
| Кількість | Ціна без ПДВ |
|---|---|
| 18+ | 26.06 грн |
| 24+ | 17.86 грн |
| 100+ | 10.35 грн |
| 500+ | 7.09 грн |
| 1000+ | 6.09 грн |
| BZT52C20T-7 |
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Виробник: DIODES INCORPORATED
Category: SMD Zener diodes
Description: Diode: Zener; 0.3W; 20V; SMD; SOD523; single diode; reel,tape
Type of diode: Zener
Power dissipation: 0.3W
Zener voltage: 20V
Mounting: SMD
Tolerance: ±6%
Case: SOD523
Semiconductor structure: single diode
Kind of package: reel; tape
Category: SMD Zener diodes
Description: Diode: Zener; 0.3W; 20V; SMD; SOD523; single diode; reel,tape
Type of diode: Zener
Power dissipation: 0.3W
Zener voltage: 20V
Mounting: SMD
Tolerance: ±6%
Case: SOD523
Semiconductor structure: single diode
Kind of package: reel; tape
на замовлення 500 шт:
термін постачання 14-30 дні (днів)
| Кількість | Ціна без ПДВ |
|---|---|
| 100+ | 4.94 грн |
| 210+ | 2.02 грн |
| 500+ | 1.79 грн |
| BZT52C20-13-F |
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Виробник: DIODES INCORPORATED
Category: SMD Zener diodes
Description: Diode: Zener; 0.37W; 20V; SMD; SOD123; single diode; reel,tape
Type of diode: Zener
Power dissipation: 0.37W
Zener voltage: 20V
Mounting: SMD
Tolerance: ±6%
Case: SOD123
Semiconductor structure: single diode
Kind of package: reel; tape
Category: SMD Zener diodes
Description: Diode: Zener; 0.37W; 20V; SMD; SOD123; single diode; reel,tape
Type of diode: Zener
Power dissipation: 0.37W
Zener voltage: 20V
Mounting: SMD
Tolerance: ±6%
Case: SOD123
Semiconductor structure: single diode
Kind of package: reel; tape
товару немає в наявності
Мінімальне замовлення: 10000 шт
В кошику
од. на суму грн.
| BZT52C20Q-7-F |
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Виробник: DIODES INCORPORATED
Category: SMD Zener diodes
Description: Diode: Zener; 0.37W; 20V; SMD; SOD123; single diode; reel,tape
Type of diode: Zener
Power dissipation: 0.37W
Zener voltage: 20V
Mounting: SMD
Tolerance: ±6%
Case: SOD123
Semiconductor structure: single diode
Kind of package: reel; tape
Application: automotive industry
Category: SMD Zener diodes
Description: Diode: Zener; 0.37W; 20V; SMD; SOD123; single diode; reel,tape
Type of diode: Zener
Power dissipation: 0.37W
Zener voltage: 20V
Mounting: SMD
Tolerance: ±6%
Case: SOD123
Semiconductor structure: single diode
Kind of package: reel; tape
Application: automotive industry
товару немає в наявності
В кошику
од. на суму грн.
| BZT52C20SQ-7-F |
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Виробник: DIODES INCORPORATED
Category: SMD Zener diodes
Description: Diode: Zener; 0.2W; 20V; SMD; SOD323; single diode; reel,tape
Case: SOD323
Mounting: SMD
Kind of package: reel; tape
Tolerance: ±6%
Power dissipation: 0.2W
Application: automotive industry
Semiconductor structure: single diode
Zener voltage: 20V
Type of diode: Zener
Category: SMD Zener diodes
Description: Diode: Zener; 0.2W; 20V; SMD; SOD323; single diode; reel,tape
Case: SOD323
Mounting: SMD
Kind of package: reel; tape
Tolerance: ±6%
Power dissipation: 0.2W
Application: automotive industry
Semiconductor structure: single diode
Zener voltage: 20V
Type of diode: Zener
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В кошику
од. на суму грн.
| BZT52C20TQ-7-F |
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Виробник: DIODES INCORPORATED
Category: SMD Zener diodes
Description: Diode: Zener; 0.3W; 20V; SMD; SOD523; single diode; reel,tape
Type of diode: Zener
Power dissipation: 0.3W
Zener voltage: 20V
Mounting: SMD
Tolerance: ±6%
Case: SOD523
Semiconductor structure: single diode
Kind of package: reel; tape
Application: automotive industry
Category: SMD Zener diodes
Description: Diode: Zener; 0.3W; 20V; SMD; SOD523; single diode; reel,tape
Type of diode: Zener
Power dissipation: 0.3W
Zener voltage: 20V
Mounting: SMD
Tolerance: ±6%
Case: SOD523
Semiconductor structure: single diode
Kind of package: reel; tape
Application: automotive industry
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В кошику
од. на суму грн.
| 1SMB5955B-13 |
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Виробник: DIODES INCORPORATED
Category: SMD Zener diodes
Description: Diode: Zener; 3W; 180V; SMD; SMB; single diode; reel,tape
Tolerance: ±5%
Mounting: SMD
Power dissipation: 3W
Kind of package: reel; tape
Semiconductor structure: single diode
Case: SMB
Zener voltage: 180V
Type of diode: Zener
Category: SMD Zener diodes
Description: Diode: Zener; 3W; 180V; SMD; SMB; single diode; reel,tape
Tolerance: ±5%
Mounting: SMD
Power dissipation: 3W
Kind of package: reel; tape
Semiconductor structure: single diode
Case: SMB
Zener voltage: 180V
Type of diode: Zener
товару немає в наявності
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| DMN6070SSD-13 |
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Виробник: DIODES INCORPORATED
Category: Multi channel transistors
Description: Transistor: N-MOSFET x2; unipolar; 60V; 3.6A; 1.2W; SO8
Case: SO8
Mounting: SMD
Kind of package: 13 inch reel; tape
Power dissipation: 1.2W
Polarisation: unipolar
Drain current: 3.6A
Kind of channel: enhancement
Drain-source voltage: 60V
Type of transistor: N-MOSFET x2
Gate-source voltage: ±20V
On-state resistance: 0.1Ω
Category: Multi channel transistors
Description: Transistor: N-MOSFET x2; unipolar; 60V; 3.6A; 1.2W; SO8
Case: SO8
Mounting: SMD
Kind of package: 13 inch reel; tape
Power dissipation: 1.2W
Polarisation: unipolar
Drain current: 3.6A
Kind of channel: enhancement
Drain-source voltage: 60V
Type of transistor: N-MOSFET x2
Gate-source voltage: ±20V
On-state resistance: 0.1Ω
на замовлення 2350 шт:
термін постачання 14-30 дні (днів)
| Кількість | Ціна без ПДВ |
|---|---|
| 8+ | 60.21 грн |
| 13+ | 34.54 грн |
| 100+ | 22.61 грн |
| 500+ | 18.02 грн |
| 1000+ | 16.60 грн |
| AZ1117IH-1.2TRG1 |
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Виробник: DIODES INCORPORATED
Category: LDO fixed voltage regulators
Description: IC: voltage regulator; LDO,linear,fixed; 1.2V; 1A; SOT223; SMD
Type of integrated circuit: voltage regulator
Kind of voltage regulator: fixed; LDO; linear
Voltage drop: 1.3V
Output voltage: 1.2V
Output current: 1A
Case: SOT223
Mounting: SMD
Manufacturer series: AZ1117I
Kind of package: reel; tape
Operating temperature: -40...125°C
Tolerance: ±1%
Number of channels: 1
Input voltage: 1.5...10V
Category: LDO fixed voltage regulators
Description: IC: voltage regulator; LDO,linear,fixed; 1.2V; 1A; SOT223; SMD
Type of integrated circuit: voltage regulator
Kind of voltage regulator: fixed; LDO; linear
Voltage drop: 1.3V
Output voltage: 1.2V
Output current: 1A
Case: SOT223
Mounting: SMD
Manufacturer series: AZ1117I
Kind of package: reel; tape
Operating temperature: -40...125°C
Tolerance: ±1%
Number of channels: 1
Input voltage: 1.5...10V
товару немає в наявності
В кошику
од. на суму грн.
| AZ1117IH-1.8TRG1 |
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Виробник: DIODES INCORPORATED
Category: LDO fixed voltage regulators
Description: IC: voltage regulator; LDO,linear,fixed; 1.8V; 1A; SOT223; SMD
Type of integrated circuit: voltage regulator
Kind of voltage regulator: fixed; LDO; linear
Voltage drop: 1.3V
Output voltage: 1.8V
Output current: 1A
Case: SOT223
Mounting: SMD
Manufacturer series: AZ1117I
Kind of package: reel; tape
Operating temperature: -40...125°C
Tolerance: ±1%
Number of channels: 1
Input voltage: 1.5...10V
Category: LDO fixed voltage regulators
Description: IC: voltage regulator; LDO,linear,fixed; 1.8V; 1A; SOT223; SMD
Type of integrated circuit: voltage regulator
Kind of voltage regulator: fixed; LDO; linear
Voltage drop: 1.3V
Output voltage: 1.8V
Output current: 1A
Case: SOT223
Mounting: SMD
Manufacturer series: AZ1117I
Kind of package: reel; tape
Operating temperature: -40...125°C
Tolerance: ±1%
Number of channels: 1
Input voltage: 1.5...10V
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| AZ1117IH-1.5TRG1 |
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Виробник: DIODES INCORPORATED
Category: LDO fixed voltage regulators
Description: IC: voltage regulator; LDO,linear,fixed; 1.5V; 1A; SOT223; SMD
Type of integrated circuit: voltage regulator
Kind of voltage regulator: fixed; LDO; linear
Voltage drop: 1.3V
Output voltage: 1.5V
Output current: 1A
Case: SOT223
Mounting: SMD
Kind of package: reel; tape
Operating temperature: -40...125°C
Tolerance: ±1%
Number of channels: 1
Input voltage: 1.5...10V
Category: LDO fixed voltage regulators
Description: IC: voltage regulator; LDO,linear,fixed; 1.5V; 1A; SOT223; SMD
Type of integrated circuit: voltage regulator
Kind of voltage regulator: fixed; LDO; linear
Voltage drop: 1.3V
Output voltage: 1.5V
Output current: 1A
Case: SOT223
Mounting: SMD
Kind of package: reel; tape
Operating temperature: -40...125°C
Tolerance: ±1%
Number of channels: 1
Input voltage: 1.5...10V
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Мінімальне замовлення: 4000 шт
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| AZ1117IH-2.5TRG1 |
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Виробник: DIODES INCORPORATED
Category: LDO fixed voltage regulators
Description: IC: voltage regulator; LDO,linear,fixed; 2.5V; 1A; SOT223; SMD
Type of integrated circuit: voltage regulator
Kind of voltage regulator: fixed; LDO; linear
Voltage drop: 1.3V
Output voltage: 2.5V
Output current: 1A
Case: SOT223
Mounting: SMD
Kind of package: reel; tape
Operating temperature: -40...125°C
Tolerance: ±1%
Number of channels: 1
Input voltage: 1.5...10V
Category: LDO fixed voltage regulators
Description: IC: voltage regulator; LDO,linear,fixed; 2.5V; 1A; SOT223; SMD
Type of integrated circuit: voltage regulator
Kind of voltage regulator: fixed; LDO; linear
Voltage drop: 1.3V
Output voltage: 2.5V
Output current: 1A
Case: SOT223
Mounting: SMD
Kind of package: reel; tape
Operating temperature: -40...125°C
Tolerance: ±1%
Number of channels: 1
Input voltage: 1.5...10V
товару немає в наявності
Мінімальне замовлення: 4000 шт
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| DFLS140-7 |
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Виробник: DIODES INCORPORATED
Category: SMD Schottky diodes
Description: Diode: Schottky rectifying; PowerDI®123; SMD; 40V; 1.1A; reel,tape
Type of diode: Schottky rectifying
Case: PowerDI®123
Mounting: SMD
Max. off-state voltage: 40V
Load current: 1.1A
Semiconductor structure: single diode
Capacitance: 28pF
Max. forward voltage: 0.53V
Leakage current: 6mA
Max. forward impulse current: 40A
Kind of package: reel; tape
Power dissipation: 556mW
Category: SMD Schottky diodes
Description: Diode: Schottky rectifying; PowerDI®123; SMD; 40V; 1.1A; reel,tape
Type of diode: Schottky rectifying
Case: PowerDI®123
Mounting: SMD
Max. off-state voltage: 40V
Load current: 1.1A
Semiconductor structure: single diode
Capacitance: 28pF
Max. forward voltage: 0.53V
Leakage current: 6mA
Max. forward impulse current: 40A
Kind of package: reel; tape
Power dissipation: 556mW
на замовлення 2302 шт:
термін постачання 14-30 дні (днів)
| Кількість | Ціна без ПДВ |
|---|---|
| 10+ | 48.52 грн |
| 12+ | 35.05 грн |
| 14+ | 30.21 грн |
| 25+ | 24.87 грн |
| 50+ | 21.61 грн |
| 100+ | 19.11 грн |
| 116+ | 8.26 грн |
| 318+ | 7.76 грн |
| DMN2056U-13 |
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Виробник: DIODES INCORPORATED
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 20V; 3.2A; Idm: 22A; 940mW; SOT23
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 20V
Drain current: 3.2A
Power dissipation: 0.94W
Case: SOT23
Gate-source voltage: ±8V
On-state resistance: 85mΩ
Mounting: SMD
Kind of package: 13 inch reel; tape
Kind of channel: enhancement
Pulsed drain current: 22A
Gate charge: 4.3nC
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 20V; 3.2A; Idm: 22A; 940mW; SOT23
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 20V
Drain current: 3.2A
Power dissipation: 0.94W
Case: SOT23
Gate-source voltage: ±8V
On-state resistance: 85mΩ
Mounting: SMD
Kind of package: 13 inch reel; tape
Kind of channel: enhancement
Pulsed drain current: 22A
Gate charge: 4.3nC
товару немає в наявності
Мінімальне замовлення: 10000 шт
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| ZXTC6720MCTA |
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Виробник: DIODES INCORPORATED
Category: Complementary transistors
Description: Transistor: NPN / PNP; bipolar; complementary pair; 80/70V; 4/3A
Power dissipation: 2.45W
Polarisation: bipolar
Kind of transistor: complementary pair
Pulsed collector current: 5A
Type of transistor: NPN / PNP
Current gain: 10...900
Kind of package: reel; tape
Case: WDFN3020-8
Frequency: 100...160MHz
Collector current: 4/3A
Mounting: SMD
Manufacturer standard package: 3000pcs.
Collector-emitter voltage: 80/70V
Category: Complementary transistors
Description: Transistor: NPN / PNP; bipolar; complementary pair; 80/70V; 4/3A
Power dissipation: 2.45W
Polarisation: bipolar
Kind of transistor: complementary pair
Pulsed collector current: 5A
Type of transistor: NPN / PNP
Current gain: 10...900
Kind of package: reel; tape
Case: WDFN3020-8
Frequency: 100...160MHz
Collector current: 4/3A
Mounting: SMD
Manufacturer standard package: 3000pcs.
Collector-emitter voltage: 80/70V
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| MURS320-13-F |
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Виробник: DIODES INCORPORATED
Category: SMD universal diodes
Description: Diode: rectifying; SMD; 200V; 3A; 25ns; SMC; Ufmax: 875mV; reel,tape
Type of diode: rectifying
Mounting: SMD
Max. off-state voltage: 200V
Load current: 3A
Reverse recovery time: 25ns
Semiconductor structure: single diode
Case: SMC
Max. forward voltage: 0.875V
Kind of package: reel; tape
Category: SMD universal diodes
Description: Diode: rectifying; SMD; 200V; 3A; 25ns; SMC; Ufmax: 875mV; reel,tape
Type of diode: rectifying
Mounting: SMD
Max. off-state voltage: 200V
Load current: 3A
Reverse recovery time: 25ns
Semiconductor structure: single diode
Case: SMC
Max. forward voltage: 0.875V
Kind of package: reel; tape
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| DMN3150L-7 |
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Виробник: DIODES INCORPORATED
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 30V; 3.1A; Idm: 15A; 1.4W; SOT23
Mounting: SMD
Pulsed drain current: 15A
Power dissipation: 1.4W
Polarisation: unipolar
Drain current: 3.1A
Kind of channel: enhancement
Drain-source voltage: 30V
Type of transistor: N-MOSFET
Gate-source voltage: ±12V
Kind of package: 7 inch reel; tape
Case: SOT23
On-state resistance: 54mΩ
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 30V; 3.1A; Idm: 15A; 1.4W; SOT23
Mounting: SMD
Pulsed drain current: 15A
Power dissipation: 1.4W
Polarisation: unipolar
Drain current: 3.1A
Kind of channel: enhancement
Drain-source voltage: 30V
Type of transistor: N-MOSFET
Gate-source voltage: ±12V
Kind of package: 7 inch reel; tape
Case: SOT23
On-state resistance: 54mΩ
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| DMN3150LW-7 |
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Виробник: DIODES INCORPORATED
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 28V; 1.2A; Idm: 6.4A; 350mW; SOT323
Mounting: SMD
Pulsed drain current: 6.4A
Power dissipation: 0.35W
Polarisation: unipolar
Drain current: 1.2A
Kind of channel: enhancement
Drain-source voltage: 28V
Type of transistor: N-MOSFET
Gate-source voltage: ±12V
Kind of package: 7 inch reel; tape
Case: SOT323
On-state resistance: 138mΩ
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 28V; 1.2A; Idm: 6.4A; 350mW; SOT323
Mounting: SMD
Pulsed drain current: 6.4A
Power dissipation: 0.35W
Polarisation: unipolar
Drain current: 1.2A
Kind of channel: enhancement
Drain-source voltage: 28V
Type of transistor: N-MOSFET
Gate-source voltage: ±12V
Kind of package: 7 inch reel; tape
Case: SOT323
On-state resistance: 138mΩ
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| FMMT455TA |
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Виробник: DIODES INCORPORATED
Category: NPN SMD transistors
Description: Transistor: NPN; bipolar; 140V; 1A; 500mW; SOT23
Type of transistor: NPN
Polarisation: bipolar
Collector-emitter voltage: 140V
Collector current: 1A
Power dissipation: 0.5W
Case: SOT23
Mounting: SMD
Kind of package: reel; tape
Frequency: 100MHz
Manufacturer standard package: 3000pcs.
Category: NPN SMD transistors
Description: Transistor: NPN; bipolar; 140V; 1A; 500mW; SOT23
Type of transistor: NPN
Polarisation: bipolar
Collector-emitter voltage: 140V
Collector current: 1A
Power dissipation: 0.5W
Case: SOT23
Mounting: SMD
Kind of package: reel; tape
Frequency: 100MHz
Manufacturer standard package: 3000pcs.
на замовлення 232 шт:
термін постачання 14-30 дні (днів)
| Кількість | Ціна без ПДВ |
|---|---|
| 10+ | 46.73 грн |
| 14+ | 30.87 грн |
| 16+ | 26.53 грн |
| 100+ | 16.10 грн |
| AL5809-120P1-7 |
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Виробник: DIODES INCORPORATED
Category: LED drivers
Description: IC: driver; current regulator,LED driver; PowerDI®123; 120mA
Type of integrated circuit: driver
Kind of integrated circuit: current regulator; LED driver
Case: PowerDI®123
Output current: 0.12A
Number of channels: 1
Mounting: SMD
Operating temperature: -40...125°C
Operating voltage: 2.5...60V DC
Kind of package: reel; tape
Integrated circuit features: linear dimming; PWM
Category: LED drivers
Description: IC: driver; current regulator,LED driver; PowerDI®123; 120mA
Type of integrated circuit: driver
Kind of integrated circuit: current regulator; LED driver
Case: PowerDI®123
Output current: 0.12A
Number of channels: 1
Mounting: SMD
Operating temperature: -40...125°C
Operating voltage: 2.5...60V DC
Kind of package: reel; tape
Integrated circuit features: linear dimming; PWM
на замовлення 1095 шт:
термін постачання 14-30 дні (днів)
| Кількість | Ціна без ПДВ |
|---|---|
| 15+ | 30.55 грн |
| 22+ | 19.78 грн |
| 25+ | 19.69 грн |
| DMN2058UW-13 |
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Виробник: DIODES INCORPORATED
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 20V; 3A; Idm: 20A; 700mW; SOT323
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 20V
Drain current: 3A
Pulsed drain current: 20A
Power dissipation: 0.7W
Case: SOT323
Gate-source voltage: ±12V
On-state resistance: 91mΩ
Mounting: SMD
Gate charge: 7.7nC
Kind of package: 13 inch reel; tape
Kind of channel: enhancement
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 20V; 3A; Idm: 20A; 700mW; SOT323
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 20V
Drain current: 3A
Pulsed drain current: 20A
Power dissipation: 0.7W
Case: SOT323
Gate-source voltage: ±12V
On-state resistance: 91mΩ
Mounting: SMD
Gate charge: 7.7nC
Kind of package: 13 inch reel; tape
Kind of channel: enhancement
товару немає в наявності
Мінімальне замовлення: 10000 шт
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| DMN2058U-13 |
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Виробник: DIODES INCORPORATED
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 20V; 3.7A; Idm: 24A; 1.13W; SOT23
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 20V
Drain current: 3.7A
Pulsed drain current: 24A
Power dissipation: 1.13W
Case: SOT23
Gate-source voltage: ±12V
On-state resistance: 91mΩ
Mounting: SMD
Gate charge: 7.7nC
Kind of package: 13 inch reel; tape
Kind of channel: enhancement
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 20V; 3.7A; Idm: 24A; 1.13W; SOT23
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 20V
Drain current: 3.7A
Pulsed drain current: 24A
Power dissipation: 1.13W
Case: SOT23
Gate-source voltage: ±12V
On-state resistance: 91mΩ
Mounting: SMD
Gate charge: 7.7nC
Kind of package: 13 inch reel; tape
Kind of channel: enhancement
товару немає в наявності
Мінімальне замовлення: 10000 шт
В кошику
од. на суму грн.
| FMMT618QTA |
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Виробник: DIODES INCORPORATED
Category: NPN SMD transistors
Description: Transistor: NPN; bipolar; 20V; 2.5A; 806mW; SOT23
Type of transistor: NPN
Polarisation: bipolar
Collector-emitter voltage: 20V
Collector current: 2.5A
Power dissipation: 0.806W
Case: SOT23
Pulsed collector current: 6A
Mounting: SMD
Kind of package: reel; tape
Frequency: 140MHz
Manufacturer standard package: 3000pcs.
Application: automotive industry
Category: NPN SMD transistors
Description: Transistor: NPN; bipolar; 20V; 2.5A; 806mW; SOT23
Type of transistor: NPN
Polarisation: bipolar
Collector-emitter voltage: 20V
Collector current: 2.5A
Power dissipation: 0.806W
Case: SOT23
Pulsed collector current: 6A
Mounting: SMD
Kind of package: reel; tape
Frequency: 140MHz
Manufacturer standard package: 3000pcs.
Application: automotive industry
на замовлення 2771 шт:
термін постачання 14-30 дні (днів)
| Кількість | Ціна без ПДВ |
|---|---|
| 8+ | 56.61 грн |
| 13+ | 33.13 грн |
| 25+ | 29.70 грн |
| 50+ | 27.12 грн |
| 85+ | 11.26 грн |
| 234+ | 10.60 грн |
| fmmt717 |
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Виробник: DIODES INCORPORATED
Category: PNP SMD transistors
Description: Transistor: PNP; bipolar; 12V; 2.5A; 625mW; SOT23
Type of transistor: PNP
Polarisation: bipolar
Collector-emitter voltage: 12V
Collector current: 2.5A
Power dissipation: 0.625W
Case: SOT23
Mounting: SMD
Kind of package: reel; tape
Quantity in set/package: 3000pcs.
Category: PNP SMD transistors
Description: Transistor: PNP; bipolar; 12V; 2.5A; 625mW; SOT23
Type of transistor: PNP
Polarisation: bipolar
Collector-emitter voltage: 12V
Collector current: 2.5A
Power dissipation: 0.625W
Case: SOT23
Mounting: SMD
Kind of package: reel; tape
Quantity in set/package: 3000pcs.
товару немає в наявності
Мінімальне замовлення: 5 шт
В кошику
од. на суму грн.
| FMMT717TA |
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Виробник: DIODES INCORPORATED
Category: PNP SMD transistors
Description: Transistor: PNP; bipolar; 12V; 2.5A; 625mW; SOT23
Type of transistor: PNP
Polarisation: bipolar
Collector-emitter voltage: 12V
Collector current: 2.5A
Power dissipation: 0.625W
Case: SOT23
Mounting: SMD
Kind of package: reel; tape
Manufacturer standard package: 3000pcs.
Category: PNP SMD transistors
Description: Transistor: PNP; bipolar; 12V; 2.5A; 625mW; SOT23
Type of transistor: PNP
Polarisation: bipolar
Collector-emitter voltage: 12V
Collector current: 2.5A
Power dissipation: 0.625W
Case: SOT23
Mounting: SMD
Kind of package: reel; tape
Manufacturer standard package: 3000pcs.
на замовлення 305 шт:
термін постачання 14-30 дні (днів)
| Кількість | Ціна без ПДВ |
|---|---|
| 10+ | 46.73 грн |
| 12+ | 36.05 грн |
| 14+ | 31.54 грн |
| 100+ | 18.86 грн |
| FMMT717QTA |
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Виробник: DIODES INCORPORATED
Category: PNP SMD transistors
Description: Transistor: PNP; bipolar; 12V; 2.5A; 806mW; SOT23
Type of transistor: PNP
Polarisation: bipolar
Collector-emitter voltage: 12V
Collector current: 2.5A
Power dissipation: 0.806W
Case: SOT23
Mounting: SMD
Kind of package: reel; tape
Manufacturer standard package: 3000pcs.
Pulsed collector current: 10A
Application: automotive industry
Current gain: 45...475
Frequency: 80...110MHz
Category: PNP SMD transistors
Description: Transistor: PNP; bipolar; 12V; 2.5A; 806mW; SOT23
Type of transistor: PNP
Polarisation: bipolar
Collector-emitter voltage: 12V
Collector current: 2.5A
Power dissipation: 0.806W
Case: SOT23
Mounting: SMD
Kind of package: reel; tape
Manufacturer standard package: 3000pcs.
Pulsed collector current: 10A
Application: automotive industry
Current gain: 45...475
Frequency: 80...110MHz
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| SDM20N40A-7 |
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Виробник: DIODES INCORPORATED
Category: SMD Schottky diodes
Description: Diode: Schottky switching; SOT23; SMD; 40V; 0.2A; reel,tape; 200mW
Case: SOT23
Mounting: SMD
Max. forward voltage: 0.55V
Power dissipation: 0.2W
Max. off-state voltage: 40V
Load current: 0.2A
Kind of package: reel; tape
Semiconductor structure: common anode; double
Leakage current: 3mA
Capacitance: 50pF
Type of diode: Schottky switching
Max. forward impulse current: 1A
Category: SMD Schottky diodes
Description: Diode: Schottky switching; SOT23; SMD; 40V; 0.2A; reel,tape; 200mW
Case: SOT23
Mounting: SMD
Max. forward voltage: 0.55V
Power dissipation: 0.2W
Max. off-state voltage: 40V
Load current: 0.2A
Kind of package: reel; tape
Semiconductor structure: common anode; double
Leakage current: 3mA
Capacitance: 50pF
Type of diode: Schottky switching
Max. forward impulse current: 1A
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| PAM2312AABADJ |
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Виробник: DIODES INCORPORATED
Category: Voltage regulators - DC/DC circuits
Description: PMIC; DC/DC converter; Uin: 2.5÷5.5VDC; 1A; TSOT25; SMD; 1.5MHz
Operating temperature: -40...85°C
Input voltage: 2.5...5.5V DC
Output current: 1A
Type of integrated circuit: PMIC
Efficiency: 96%
Kind of package: reel; tape
Case: TSOT25
Kind of integrated circuit: DC/DC converter
Frequency: 1.5MHz
Topology: buck
Mounting: SMD
Category: Voltage regulators - DC/DC circuits
Description: PMIC; DC/DC converter; Uin: 2.5÷5.5VDC; 1A; TSOT25; SMD; 1.5MHz
Operating temperature: -40...85°C
Input voltage: 2.5...5.5V DC
Output current: 1A
Type of integrated circuit: PMIC
Efficiency: 96%
Kind of package: reel; tape
Case: TSOT25
Kind of integrated circuit: DC/DC converter
Frequency: 1.5MHz
Topology: buck
Mounting: SMD
на замовлення 8770 шт:
термін постачання 14-30 дні (днів)
| Кількість | Ціна без ПДВ |
|---|---|
| 20+ | 23.36 грн |
| 24+ | 17.69 грн |
| 27+ | 15.60 грн |
| 32+ | 13.43 грн |
| 50+ | 12.18 грн |
| 100+ | 11.18 грн |
| 250+ | 10.76 грн |
| ZVP0545GTA |
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Виробник: DIODES INCORPORATED
Category: SMD P channel transistors
Description: Transistor: P-MOSFET; unipolar; -450V; -0.075A; Idm: -150mA; 2W
Type of transistor: P-MOSFET
Polarisation: unipolar
Drain-source voltage: -450V
Drain current: -0.075A
Pulsed drain current: -150mA
Power dissipation: 2W
Case: SOT223
Gate-source voltage: ±20V
On-state resistance: 150Ω
Mounting: SMD
Kind of package: reel; tape
Kind of channel: enhancement
Category: SMD P channel transistors
Description: Transistor: P-MOSFET; unipolar; -450V; -0.075A; Idm: -150mA; 2W
Type of transistor: P-MOSFET
Polarisation: unipolar
Drain-source voltage: -450V
Drain current: -0.075A
Pulsed drain current: -150mA
Power dissipation: 2W
Case: SOT223
Gate-source voltage: ±20V
On-state resistance: 150Ω
Mounting: SMD
Kind of package: reel; tape
Kind of channel: enhancement
на замовлення 17 шт:
термін постачання 14-30 дні (днів)
| Кількість | Ціна без ПДВ |
|---|---|
| 7+ | 68.29 грн |
| 10+ | 43.72 грн |
| DMN2075U-7 |
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Виробник: DIODES INCORPORATED
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 20V; 3.4A; 0.8W; SOT23
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 20V
Drain current: 3.4A
Power dissipation: 0.8W
Case: SOT23
Gate-source voltage: ±8V
On-state resistance: 45mΩ
Mounting: SMD
Kind of package: reel; tape
Kind of channel: enhancement
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 20V; 3.4A; 0.8W; SOT23
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 20V
Drain current: 3.4A
Power dissipation: 0.8W
Case: SOT23
Gate-source voltage: ±8V
On-state resistance: 45mΩ
Mounting: SMD
Kind of package: reel; tape
Kind of channel: enhancement
товару немає в наявності
Мінімальне замовлення: 5 шт
В кошику
од. на суму грн.
| DMN2075UDW-7 |
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Виробник: DIODES INCORPORATED
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 20V; 2.5A; Idm: 20A; 580mW; SOT363
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 20V
Drain current: 2.5A
Pulsed drain current: 20A
Power dissipation: 0.58W
Case: SOT363
Gate-source voltage: ±8V
On-state resistance: 0.1Ω
Mounting: SMD
Gate charge: 7nC
Kind of package: 7 inch reel; tape
Kind of channel: enhancement
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 20V; 2.5A; Idm: 20A; 580mW; SOT363
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 20V
Drain current: 2.5A
Pulsed drain current: 20A
Power dissipation: 0.58W
Case: SOT363
Gate-source voltage: ±8V
On-state resistance: 0.1Ω
Mounting: SMD
Gate charge: 7nC
Kind of package: 7 inch reel; tape
Kind of channel: enhancement
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| 2DB1182Q-13 |
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Виробник: DIODES INCORPORATED
Category: PNP SMD transistors
Description: Transistor: PNP; bipolar; 32V; 2A; 15W; DPAK,TO252
Type of transistor: PNP
Polarisation: bipolar
Collector-emitter voltage: 32V
Collector current: 2A
Power dissipation: 15W
Case: DPAK; TO252
Current gain: 120...270
Mounting: SMD
Kind of package: reel; tape
Application: automotive industry
Manufacturer standard package: 2500pcs.
Pulsed collector current: 3A
Frequency: 110MHz
Category: PNP SMD transistors
Description: Transistor: PNP; bipolar; 32V; 2A; 15W; DPAK,TO252
Type of transistor: PNP
Polarisation: bipolar
Collector-emitter voltage: 32V
Collector current: 2A
Power dissipation: 15W
Case: DPAK; TO252
Current gain: 120...270
Mounting: SMD
Kind of package: reel; tape
Application: automotive industry
Manufacturer standard package: 2500pcs.
Pulsed collector current: 3A
Frequency: 110MHz
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| B220AQ-13-F |
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Виробник: DIODES INCORPORATED
Category: SMD Schottky diodes
Description: Diode: Schottky rectifying; SMA; SMD; 20V; 2A; reel,tape
Type of diode: Schottky rectifying
Max. off-state voltage: 20V
Max. forward impulse current: 50A
Semiconductor structure: single diode
Case: SMA
Mounting: SMD
Leakage current: 20mA
Kind of package: reel; tape
Application: automotive industry
Load current: 2A
Capacitance: 0.2nF
Max. forward voltage: 0.5V
Category: SMD Schottky diodes
Description: Diode: Schottky rectifying; SMA; SMD; 20V; 2A; reel,tape
Type of diode: Schottky rectifying
Max. off-state voltage: 20V
Max. forward impulse current: 50A
Semiconductor structure: single diode
Case: SMA
Mounting: SMD
Leakage current: 20mA
Kind of package: reel; tape
Application: automotive industry
Load current: 2A
Capacitance: 0.2nF
Max. forward voltage: 0.5V
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| B220AF-13 |
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Виробник: DIODES INCORPORATED
Category: SMD Schottky diodes
Description: Diode: Schottky rectifying; SMA flat; SMD; 20V; 2A; reel,tape
Type of diode: Schottky rectifying
Max. off-state voltage: 20V
Max. forward impulse current: 50A
Semiconductor structure: single diode
Case: SMA flat
Mounting: SMD
Leakage current: 16mA
Kind of package: reel; tape
Load current: 2A
Capacitance: 93pF
Max. forward voltage: 0.5V
Category: SMD Schottky diodes
Description: Diode: Schottky rectifying; SMA flat; SMD; 20V; 2A; reel,tape
Type of diode: Schottky rectifying
Max. off-state voltage: 20V
Max. forward impulse current: 50A
Semiconductor structure: single diode
Case: SMA flat
Mounting: SMD
Leakage current: 16mA
Kind of package: reel; tape
Load current: 2A
Capacitance: 93pF
Max. forward voltage: 0.5V
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Мінімальне замовлення: 10000 шт
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| D5V0L1B2WS-7 |
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Виробник: DIODES INCORPORATED
Category: Bidirectional TVS SMD diodes
Description: Diode: TVS; 84W; 6÷8V; 6A; bidirectional; SOD323; Ch: 1; reel,tape
Type of diode: TVS
Peak pulse power dissipation: 84W
Max. off-state voltage: 5V
Breakdown voltage: 6...8V
Max. forward impulse current: 6A
Semiconductor structure: bidirectional
Case: SOD323
Mounting: SMD
Leakage current: 0.1µA
Kind of package: reel; tape
Number of channels: 1
Category: Bidirectional TVS SMD diodes
Description: Diode: TVS; 84W; 6÷8V; 6A; bidirectional; SOD323; Ch: 1; reel,tape
Type of diode: TVS
Peak pulse power dissipation: 84W
Max. off-state voltage: 5V
Breakdown voltage: 6...8V
Max. forward impulse current: 6A
Semiconductor structure: bidirectional
Case: SOD323
Mounting: SMD
Leakage current: 0.1µA
Kind of package: reel; tape
Number of channels: 1
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| DMN3013LDG-7 |
Виробник: DIODES INCORPORATED
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 30V; 7.6A; Idm: 80A; 1.25W
Case: PowerDI3333-8
Mounting: SMD
Kind of package: 7 inch reel; tape
Pulsed drain current: 80A
Power dissipation: 1.25W
Gate charge: 5.7nC
Polarisation: unipolar
Drain current: 7.6A
Kind of channel: enhancement
Drain-source voltage: 30V
Type of transistor: N-MOSFET
Gate-source voltage: ±10V
On-state resistance: 17.7mΩ
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 30V; 7.6A; Idm: 80A; 1.25W
Case: PowerDI3333-8
Mounting: SMD
Kind of package: 7 inch reel; tape
Pulsed drain current: 80A
Power dissipation: 1.25W
Gate charge: 5.7nC
Polarisation: unipolar
Drain current: 7.6A
Kind of channel: enhancement
Drain-source voltage: 30V
Type of transistor: N-MOSFET
Gate-source voltage: ±10V
On-state resistance: 17.7mΩ
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| DMNH4005SPSQ-13 |
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Виробник: DIODES INCORPORATED
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 40V; 100A; Idm: 150A; 2.8W
Mounting: SMD
Pulsed drain current: 150A
Power dissipation: 2.8W
Gate charge: 48nC
Polarisation: unipolar
Drain current: 100A
Kind of channel: enhancement
Drain-source voltage: 40V
Application: automotive industry
Type of transistor: N-MOSFET
Gate-source voltage: ±20V
Kind of package: 13 inch reel; tape
Case: PowerDI5060-8
On-state resistance: 4mΩ
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 40V; 100A; Idm: 150A; 2.8W
Mounting: SMD
Pulsed drain current: 150A
Power dissipation: 2.8W
Gate charge: 48nC
Polarisation: unipolar
Drain current: 100A
Kind of channel: enhancement
Drain-source voltage: 40V
Application: automotive industry
Type of transistor: N-MOSFET
Gate-source voltage: ±20V
Kind of package: 13 inch reel; tape
Case: PowerDI5060-8
On-state resistance: 4mΩ
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Мінімальне замовлення: 2500 шт
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| DMTH4005SPS-13 |
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Виробник: DIODES INCORPORATED
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 40V; 100A; Idm: 320A; 150W
Mounting: SMD
Pulsed drain current: 320A
Power dissipation: 150W
Gate charge: 49.1nC
Polarisation: unipolar
Drain current: 100A
Kind of channel: enhancement
Drain-source voltage: 40V
Type of transistor: N-MOSFET
Gate-source voltage: ±20V
Kind of package: 13 inch reel; tape
Case: PowerDI5060-8
On-state resistance: 3.7mΩ
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 40V; 100A; Idm: 320A; 150W
Mounting: SMD
Pulsed drain current: 320A
Power dissipation: 150W
Gate charge: 49.1nC
Polarisation: unipolar
Drain current: 100A
Kind of channel: enhancement
Drain-source voltage: 40V
Type of transistor: N-MOSFET
Gate-source voltage: ±20V
Kind of package: 13 inch reel; tape
Case: PowerDI5060-8
On-state resistance: 3.7mΩ
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| AP22652AW6-7 |
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Виробник: DIODES INCORPORATED
Category: Power switches - integrated circuits
Description: IC: power switch; high-side,USB switch; 2.1A; Ch: 1; P-Channel; SMD
Mounting: SMD
Supply voltage: 2.7...5.5V DC
Active logical level: low
Output current: 2.1A
Type of integrated circuit: power switch
Kind of output: P-Channel
Kind of package: reel; tape
Case: SOT26
Kind of integrated circuit: high-side; USB switch
Number of channels: 1
On-state resistance: 65mΩ
Category: Power switches - integrated circuits
Description: IC: power switch; high-side,USB switch; 2.1A; Ch: 1; P-Channel; SMD
Mounting: SMD
Supply voltage: 2.7...5.5V DC
Active logical level: low
Output current: 2.1A
Type of integrated circuit: power switch
Kind of output: P-Channel
Kind of package: reel; tape
Case: SOT26
Kind of integrated circuit: high-side; USB switch
Number of channels: 1
On-state resistance: 65mΩ
на замовлення 189 шт:
термін постачання 14-30 дні (днів)
| Кількість | Ціна без ПДВ |
|---|---|
| 16+ | 28.76 грн |
| 22+ | 19.19 грн |
| 25+ | 16.69 грн |
| 50+ | 15.10 грн |
| 79+ | 12.18 грн |
| GBU808 |
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Виробник: DIODES INCORPORATED
Category: Flat single phase diode bridge rectif.
Description: Bridge rectifier: single-phase; Urmax: 800V; If: 8A; Ifsm: 200A
Type of bridge rectifier: single-phase
Max. off-state voltage: 0.8kV
Load current: 8A
Max. forward impulse current: 200A
Version: flat
Case: GBU
Electrical mounting: THT
Leads: flat pin
Kind of package: tube
Features of semiconductor devices: glass passivated
Category: Flat single phase diode bridge rectif.
Description: Bridge rectifier: single-phase; Urmax: 800V; If: 8A; Ifsm: 200A
Type of bridge rectifier: single-phase
Max. off-state voltage: 0.8kV
Load current: 8A
Max. forward impulse current: 200A
Version: flat
Case: GBU
Electrical mounting: THT
Leads: flat pin
Kind of package: tube
Features of semiconductor devices: glass passivated
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| SBRT20M60SP5-7 |
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Виробник: DIODES INCORPORATED
Category: SMD Schottky diodes
Description: Diode: Schottky rectifying; PowerDI®5; Trench SBR®; SMD; 60V; 20A
Type of diode: Schottky rectifying
Case: PowerDI®5
Technology: Trench SBR®
Mounting: SMD
Max. off-state voltage: 60V
Load current: 20A
Semiconductor structure: single diode
Max. forward voltage: 0.57V
Leakage current: 40µA
Max. forward impulse current: 0.32kA
Kind of package: reel; tape
Category: SMD Schottky diodes
Description: Diode: Schottky rectifying; PowerDI®5; Trench SBR®; SMD; 60V; 20A
Type of diode: Schottky rectifying
Case: PowerDI®5
Technology: Trench SBR®
Mounting: SMD
Max. off-state voltage: 60V
Load current: 20A
Semiconductor structure: single diode
Max. forward voltage: 0.57V
Leakage current: 40µA
Max. forward impulse current: 0.32kA
Kind of package: reel; tape
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| SBRT20M60SP5-7D |
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Виробник: DIODES INCORPORATED
Category: SMD Schottky diodes
Description: Diode: Schottky rectifying; PowerDI®5; Trench SBR®; SMD; 60V; 20A
Type of diode: Schottky rectifying
Case: PowerDI®5
Technology: Trench SBR®
Mounting: SMD
Max. off-state voltage: 60V
Load current: 20A
Semiconductor structure: single diode
Max. forward voltage: 0.57V
Leakage current: 40µA
Max. forward impulse current: 0.32kA
Kind of package: reel; tape
Category: SMD Schottky diodes
Description: Diode: Schottky rectifying; PowerDI®5; Trench SBR®; SMD; 60V; 20A
Type of diode: Schottky rectifying
Case: PowerDI®5
Technology: Trench SBR®
Mounting: SMD
Max. off-state voltage: 60V
Load current: 20A
Semiconductor structure: single diode
Max. forward voltage: 0.57V
Leakage current: 40µA
Max. forward impulse current: 0.32kA
Kind of package: reel; tape
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| AS358AMTR-E1 |
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Виробник: DIODES INCORPORATED
Category: SMD operational amplifiers
Description: IC: operational amplifier; Ch: 2; 3÷36VDC; SO8; Features: low power
Type of integrated circuit: operational amplifier
Number of channels: 2
Mounting: SMT
Voltage supply range: 3...36V DC
Case: SO8
Operating temperature: -40...85°C
Integrated circuit features: low power
Input offset voltage: 5mV
Kind of package: reel; tape
Input bias current: 0.2µA
Input offset current: 100nA
Category: SMD operational amplifiers
Description: IC: operational amplifier; Ch: 2; 3÷36VDC; SO8; Features: low power
Type of integrated circuit: operational amplifier
Number of channels: 2
Mounting: SMT
Voltage supply range: 3...36V DC
Case: SO8
Operating temperature: -40...85°C
Integrated circuit features: low power
Input offset voltage: 5mV
Kind of package: reel; tape
Input bias current: 0.2µA
Input offset current: 100nA
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| ZXMN6A25KTC |
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Виробник: DIODES INCORPORATED
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 60V; 9A; 4.25W; DPAK
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 60V
Drain current: 9A
Power dissipation: 4.25W
Case: DPAK
Gate-source voltage: ±20V
On-state resistance: 70mΩ
Mounting: SMD
Kind of package: reel; tape
Kind of channel: enhancement
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 60V; 9A; 4.25W; DPAK
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 60V
Drain current: 9A
Power dissipation: 4.25W
Case: DPAK
Gate-source voltage: ±20V
On-state resistance: 70mΩ
Mounting: SMD
Kind of package: reel; tape
Kind of channel: enhancement
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| SMAZ33-13-F |
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Виробник: DIODES INCORPORATED
Category: SMD Zener diodes
Description: Diode: Zener; 1W; 33V; SMD; SMA; single diode; reel,tape
Type of diode: Zener
Power dissipation: 1W
Zener voltage: 33V
Mounting: SMD
Tolerance: ±5%
Case: SMA
Semiconductor structure: single diode
Kind of package: reel; tape
Category: SMD Zener diodes
Description: Diode: Zener; 1W; 33V; SMD; SMA; single diode; reel,tape
Type of diode: Zener
Power dissipation: 1W
Zener voltage: 33V
Mounting: SMD
Tolerance: ±5%
Case: SMA
Semiconductor structure: single diode
Kind of package: reel; tape
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| SMBJ8.0CA-13-F |
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Виробник: DIODES INCORPORATED
Category: Bidirectional TVS SMD diodes
Description: Diode: TVS; 0.6kW; 8.89÷10.23V; 44.1A; bidirectional; SMB
Type of diode: TVS
Peak pulse power dissipation: 0.6kW
Max. off-state voltage: 8V
Breakdown voltage: 8.89...10.23V
Max. forward impulse current: 44.1A
Semiconductor structure: bidirectional
Case: SMB
Mounting: SMD
Leakage current: 0.1mA
Features of semiconductor devices: glass passivated
Kind of package: reel; tape
Category: Bidirectional TVS SMD diodes
Description: Diode: TVS; 0.6kW; 8.89÷10.23V; 44.1A; bidirectional; SMB
Type of diode: TVS
Peak pulse power dissipation: 0.6kW
Max. off-state voltage: 8V
Breakdown voltage: 8.89...10.23V
Max. forward impulse current: 44.1A
Semiconductor structure: bidirectional
Case: SMB
Mounting: SMD
Leakage current: 0.1mA
Features of semiconductor devices: glass passivated
Kind of package: reel; tape
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| MBR180S1-7 |
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Виробник: DIODES INCORPORATED
Category: SMD Schottky diodes
Description: Diode: Schottky rectifying; SOD123; SMD; 80V; 1A; reel,tape
Type of diode: Schottky rectifying
Case: SOD123
Mounting: SMD
Max. off-state voltage: 80V
Load current: 1A
Semiconductor structure: single diode
Max. forward voltage: 0.8V
Max. forward impulse current: 24A
Kind of package: reel; tape
Category: SMD Schottky diodes
Description: Diode: Schottky rectifying; SOD123; SMD; 80V; 1A; reel,tape
Type of diode: Schottky rectifying
Case: SOD123
Mounting: SMD
Max. off-state voltage: 80V
Load current: 1A
Semiconductor structure: single diode
Max. forward voltage: 0.8V
Max. forward impulse current: 24A
Kind of package: reel; tape
на замовлення 151 шт:
термін постачання 14-30 дні (днів)
| Кількість | Ціна без ПДВ |
|---|---|
| 23+ | 19.77 грн |
| 35+ | 11.93 грн |
| 100+ | 6.41 грн |
| DMT8008LFG-7 |
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Виробник: DIODES INCORPORATED
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 80V; 13A; Idm: 192A; 2.5W
Case: PowerDI3333-8
Kind of package: 7 inch reel; tape
Drain current: 13A
Kind of channel: enhancement
Drain-source voltage: 80V
Type of transistor: N-MOSFET
Gate-source voltage: ±20V
On-state resistance: 10.4mΩ
Mounting: SMD
Pulsed drain current: 192A
Power dissipation: 2.5W
Gate charge: 37.7nC
Polarisation: unipolar
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 80V; 13A; Idm: 192A; 2.5W
Case: PowerDI3333-8
Kind of package: 7 inch reel; tape
Drain current: 13A
Kind of channel: enhancement
Drain-source voltage: 80V
Type of transistor: N-MOSFET
Gate-source voltage: ±20V
On-state resistance: 10.4mΩ
Mounting: SMD
Pulsed drain current: 192A
Power dissipation: 2.5W
Gate charge: 37.7nC
Polarisation: unipolar
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Мінімальне замовлення: 2000 шт
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| DMT8008LFG-13 |
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Виробник: DIODES INCORPORATED
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 80V; 13A; Idm: 192A; 2.5W
Case: PowerDI3333-8
Kind of package: 13 inch reel; tape
Drain current: 13A
Kind of channel: enhancement
Drain-source voltage: 80V
Type of transistor: N-MOSFET
Gate-source voltage: ±20V
On-state resistance: 10.4mΩ
Mounting: SMD
Pulsed drain current: 192A
Power dissipation: 2.5W
Gate charge: 37.7nC
Polarisation: unipolar
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 80V; 13A; Idm: 192A; 2.5W
Case: PowerDI3333-8
Kind of package: 13 inch reel; tape
Drain current: 13A
Kind of channel: enhancement
Drain-source voltage: 80V
Type of transistor: N-MOSFET
Gate-source voltage: ±20V
On-state resistance: 10.4mΩ
Mounting: SMD
Pulsed drain current: 192A
Power dissipation: 2.5W
Gate charge: 37.7nC
Polarisation: unipolar
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Мінімальне замовлення: 3000 шт
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| DMT8008LPS-13 |
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Виробник: DIODES INCORPORATED
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 80V; 66A; Idm: 330A; 2.8W
Case: PowerDI5060-8
Kind of package: 13 inch reel; tape
Drain current: 66A
Kind of channel: enhancement
Drain-source voltage: 80V
Type of transistor: N-MOSFET
Gate-source voltage: ±20V
On-state resistance: 11mΩ
Mounting: SMD
Pulsed drain current: 330A
Power dissipation: 2.8W
Gate charge: 41.2nC
Polarisation: unipolar
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 80V; 66A; Idm: 330A; 2.8W
Case: PowerDI5060-8
Kind of package: 13 inch reel; tape
Drain current: 66A
Kind of channel: enhancement
Drain-source voltage: 80V
Type of transistor: N-MOSFET
Gate-source voltage: ±20V
On-state resistance: 11mΩ
Mounting: SMD
Pulsed drain current: 330A
Power dissipation: 2.8W
Gate charge: 41.2nC
Polarisation: unipolar
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Мінімальне замовлення: 2500 шт
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| DMT8008SPS-13 |
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Виробник: DIODES INCORPORATED
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 80V; 66A; Idm: 330A; 2.8W
Case: PowerDI5060-8
Kind of package: 13 inch reel; tape
Drain current: 66A
Kind of channel: enhancement
Drain-source voltage: 80V
Type of transistor: N-MOSFET
Gate-source voltage: ±20V
On-state resistance: 11mΩ
Mounting: SMD
Pulsed drain current: 330A
Power dissipation: 2.8W
Gate charge: 34nC
Polarisation: unipolar
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 80V; 66A; Idm: 330A; 2.8W
Case: PowerDI5060-8
Kind of package: 13 inch reel; tape
Drain current: 66A
Kind of channel: enhancement
Drain-source voltage: 80V
Type of transistor: N-MOSFET
Gate-source voltage: ±20V
On-state resistance: 11mΩ
Mounting: SMD
Pulsed drain current: 330A
Power dissipation: 2.8W
Gate charge: 34nC
Polarisation: unipolar
товару немає в наявності
Мінімальне замовлення: 2500 шт
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| DMT8030LFDF-7 |
Виробник: DIODES INCORPORATED
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 80V; 2.2W; DFN2020-6
Case: DFN2020-6
Drain-source voltage: 80V
Type of transistor: N-MOSFET
On-state resistance: 25mΩ
Mounting: SMD
Power dissipation: 2.2W
Gate charge: 5.4nC
Polarisation: unipolar
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 80V; 2.2W; DFN2020-6
Case: DFN2020-6
Drain-source voltage: 80V
Type of transistor: N-MOSFET
On-state resistance: 25mΩ
Mounting: SMD
Power dissipation: 2.2W
Gate charge: 5.4nC
Polarisation: unipolar
товару немає в наявності
Мінімальне замовлення: 3000 шт
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| 2DA1774Q-7-F |
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Виробник: DIODES INCORPORATED
Category: PNP SMD transistors
Description: Transistor: PNP; bipolar; 50V; 0.15A; 150mW; SOT523
Mounting: SMD
Manufacturer standard package: 3000pcs.
Collector-emitter voltage: 50V
Power dissipation: 0.15W
Polarisation: bipolar
Application: automotive industry
Type of transistor: PNP
Current gain: 120...560
Kind of package: reel; tape
Case: SOT523
Frequency: 140MHz
Collector current: 0.15A
Category: PNP SMD transistors
Description: Transistor: PNP; bipolar; 50V; 0.15A; 150mW; SOT523
Mounting: SMD
Manufacturer standard package: 3000pcs.
Collector-emitter voltage: 50V
Power dissipation: 0.15W
Polarisation: bipolar
Application: automotive industry
Type of transistor: PNP
Current gain: 120...560
Kind of package: reel; tape
Case: SOT523
Frequency: 140MHz
Collector current: 0.15A
товару немає в наявності
В кошику
од. на суму грн.
| 2DA1774QLP-7 |
![]() |
Виробник: DIODES INCORPORATED
Category: PNP SMD transistors
Description: Transistor: PNP; bipolar; 40V; 0.1A; 1W; X1-DFN1006-3
Mounting: SMD
Manufacturer standard package: 3000pcs.
Collector-emitter voltage: 40V
Power dissipation: 1W
Polarisation: bipolar
Pulsed collector current: 0.2A
Application: automotive industry
Type of transistor: PNP
Current gain: 120...270
Kind of package: reel; tape
Case: X1-DFN1006-3
Frequency: 100MHz
Collector current: 0.1A
Category: PNP SMD transistors
Description: Transistor: PNP; bipolar; 40V; 0.1A; 1W; X1-DFN1006-3
Mounting: SMD
Manufacturer standard package: 3000pcs.
Collector-emitter voltage: 40V
Power dissipation: 1W
Polarisation: bipolar
Pulsed collector current: 0.2A
Application: automotive industry
Type of transistor: PNP
Current gain: 120...270
Kind of package: reel; tape
Case: X1-DFN1006-3
Frequency: 100MHz
Collector current: 0.1A
товару немає в наявності
В кошику
од. на суму грн.
| 2DA1774QLP-7B |
![]() |
Виробник: DIODES INCORPORATED
Category: PNP SMD transistors
Description: Transistor: PNP; bipolar; 40V; 0.1A; 1W; X1-DFN1006-3
Mounting: SMD
Manufacturer standard package: 10000pcs.
Collector-emitter voltage: 40V
Power dissipation: 1W
Polarisation: bipolar
Pulsed collector current: 0.2A
Application: automotive industry
Type of transistor: PNP
Current gain: 120...270
Kind of package: reel; tape
Case: X1-DFN1006-3
Frequency: 100MHz
Collector current: 0.1A
Category: PNP SMD transistors
Description: Transistor: PNP; bipolar; 40V; 0.1A; 1W; X1-DFN1006-3
Mounting: SMD
Manufacturer standard package: 10000pcs.
Collector-emitter voltage: 40V
Power dissipation: 1W
Polarisation: bipolar
Pulsed collector current: 0.2A
Application: automotive industry
Type of transistor: PNP
Current gain: 120...270
Kind of package: reel; tape
Case: X1-DFN1006-3
Frequency: 100MHz
Collector current: 0.1A
товару немає в наявності
Мінімальне замовлення: 10000 шт
В кошику
од. на суму грн.



























