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MDS75-08 GeneSiC Semiconductor GeneSiC
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MDS75-12 GeneSiC Semiconductor GeneSiC
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MDS75-16 GeneSiC Semiconductor GeneSiC
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MSRT100100(A)D MSRT100100(A)D GeneSiC Semiconductor msrt10060ad_thru_msrt100100ad-1132692.pdf Schottky Diodes & Rectifiers 1000V 100A Forward
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MSRT100100(A)D MSRT100100(A)D GeneSiC Semiconductor msrt10060(a)d_thru_msrt100100(a)d.pdf Description: DIODE GEN 1KV 100A 3 TOWER
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MSRT100100AD MSRT100100AD GeneSiC Semiconductor msrt100100ad.pdf Description: DIODE MOD GP 1000V 100A 3TOWER
Packaging: Bulk
Package / Case: Three Tower
Mounting Type: Chassis Mount
Speed: Standard Recovery >500ns, > 200mA (Io)
Technology: Standard
Diode Configuration: 1 Pair Series Connection
Current - Average Rectified (Io) (per Diode): 100A
Supplier Device Package: Three Tower
Operating Temperature - Junction: -55°C ~ 150°C
Voltage - DC Reverse (Vr) (Max): 1000 V
Voltage - Forward (Vf) (Max) @ If: 1.1 V @ 100 A
Current - Reverse Leakage @ Vr: 10 µA @ 1000 V
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MSRT100100D MSRT100100D GeneSiC Semiconductor msrt100100d.pdf Description: DIODE MOD GP 1000V 100A 3TOWER
Packaging: Bulk
Package / Case: Three Tower
Mounting Type: Chassis Mount
Speed: Standard Recovery >500ns, > 200mA (Io)
Technology: Standard
Diode Configuration: 1 Pair Series Connection
Current - Average Rectified (Io) (per Diode): 100A
Supplier Device Package: Three Tower
Operating Temperature - Junction: -55°C ~ 150°C
Voltage - DC Reverse (Vr) (Max): 1000 V
Voltage - Forward (Vf) (Max) @ If: 1.1 V @ 100 A
Current - Reverse Leakage @ Vr: 10 µA @ 1000 V
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MSRT100120AD MSRT100120AD GeneSiC Semiconductor msrt100120ad.pdf Description: DIODE MOD GP 1200V 100A 3TOWER
Packaging: Bulk
Package / Case: Three Tower
Mounting Type: Chassis Mount
Speed: Standard Recovery >500ns, > 200mA (Io)
Technology: Standard
Diode Configuration: 1 Pair Series Connection
Current - Average Rectified (Io) (per Diode): 100A
Supplier Device Package: Three Tower
Operating Temperature - Junction: -55°C ~ 150°C
Voltage - DC Reverse (Vr) (Max): 1200 V
Voltage - Forward (Vf) (Max) @ If: 1.1 V @ 100 A
Current - Reverse Leakage @ Vr: 10 µA @ 1200 V
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MSRT100120(A)D MSRT100120(A)D GeneSiC Semiconductor msrt100120(a)d_thru_msrt100160(a)d.pdf Description: DIODE GEN 1.2KV 100A 3 TOWER
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MSRT100120(A)D MSRT100120(A)D GeneSiC Semiconductor msrt100120ad_thru_msrt100160ad-1133132.pdf Schottky Diodes & Rectifiers 1200V 100A Forward
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MSRT100120D MSRT100120D GeneSiC Semiconductor msrt100160d.pdf Description: DIODE MOD GP 1200V 100A 3TOWER
Packaging: Bulk
Package / Case: Three Tower
Mounting Type: Chassis Mount
Speed: Standard Recovery >500ns, > 200mA (Io)
Technology: Standard
Diode Configuration: 1 Pair Series Connection
Current - Average Rectified (Io) (per Diode): 100A
Supplier Device Package: Three Tower
Operating Temperature - Junction: -55°C ~ 150°C
Voltage - DC Reverse (Vr) (Max): 1200 V
Voltage - Forward (Vf) (Max) @ If: 1.1 V @ 100 A
Current - Reverse Leakage @ Vr: 10 µA @ 1200 V
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MSRT100140(A)D MSRT100140(A)D GeneSiC Semiconductor msrt100120(a)d_thru_msrt100160(a)d.pdf Description: DIODE GEN 1.4KV 100A 3 TOWER
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MSRT100140AD MSRT100140AD GeneSiC Semiconductor msrt100140ad.pdf Description: DIODE MOD GP 1400V 100A 3TOWER
Packaging: Bulk
Package / Case: Three Tower
Mounting Type: Chassis Mount
Speed: Standard Recovery >500ns, > 200mA (Io)
Technology: Standard
Diode Configuration: 1 Pair Series Connection
Current - Average Rectified (Io) (per Diode): 100A
Supplier Device Package: Three Tower
Operating Temperature - Junction: -55°C ~ 150°C
Voltage - DC Reverse (Vr) (Max): 1400 V
Voltage - Forward (Vf) (Max) @ If: 1.1 V @ 100 A
Current - Reverse Leakage @ Vr: 10 µA @ 1400 V
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MSRT100140(A)D MSRT100140(A)D GeneSiC Semiconductor msrt100120ad_thru_msrt100160ad-1133132.pdf Schottky Diodes & Rectifiers 1400V 100A Forward
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MSRT100140D MSRT100140D GeneSiC Semiconductor msrt100160d.pdf Description: DIODE MOD GP 1400V 100A 3TOWER
Packaging: Bulk
Package / Case: Three Tower
Mounting Type: Chassis Mount
Speed: Standard Recovery >500ns, > 200mA (Io)
Technology: Standard
Diode Configuration: 1 Pair Series Connection
Current - Average Rectified (Io) (per Diode): 100A
Supplier Device Package: Three Tower
Operating Temperature - Junction: -55°C ~ 150°C
Voltage - DC Reverse (Vr) (Max): 1400 V
Voltage - Forward (Vf) (Max) @ If: 1.1 V @ 100 A
Current - Reverse Leakage @ Vr: 10 µA @ 1400 V
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MSRT100160(A)D MSRT100160(A)D GeneSiC Semiconductor msrt100120(a)d_thru_msrt100160(a)d.pdf Description: DIODE GEN 1.6KV 100A 3 TOWER
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MSRT100160AD MSRT100160AD GeneSiC Semiconductor msrt100160ad.pdf Description: DIODE MOD GP 1600V 100A 3TOWER
Packaging: Bulk
Package / Case: Three Tower
Mounting Type: Chassis Mount
Speed: Standard Recovery >500ns, > 200mA (Io)
Technology: Standard
Diode Configuration: 1 Pair Series Connection
Current - Average Rectified (Io) (per Diode): 100A
Supplier Device Package: Three Tower
Operating Temperature - Junction: -55°C ~ 150°C
Voltage - DC Reverse (Vr) (Max): 1600 V
Voltage - Forward (Vf) (Max) @ If: 1.1 V @ 100 A
Current - Reverse Leakage @ Vr: 10 µA @ 1600 V
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MSRT100160(A)D MSRT100160(A)D GeneSiC Semiconductor msrt100120ad_thru_msrt100160ad-1133132.pdf Discrete Semiconductor Modules 1600V 100A Forward
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MSRT100160D MSRT100160D GeneSiC Semiconductor msrt100160d.pdf Description: DIODE MOD GP 1600V 100A 3TOWER
Packaging: Bulk
Package / Case: Three Tower
Mounting Type: Chassis Mount
Speed: Standard Recovery >500ns, > 200mA (Io)
Technology: Standard
Diode Configuration: 1 Pair Series Connection
Current - Average Rectified (Io) (per Diode): 100A
Supplier Device Package: Three Tower
Operating Temperature - Junction: -55°C ~ 150°C
Voltage - DC Reverse (Vr) (Max): 1600 V
Voltage - Forward (Vf) (Max) @ If: 1.1 V @ 100 A
Current - Reverse Leakage @ Vr: 10 µA @ 1600 V
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MSRT10060(A)D MSRT10060(A)D GeneSiC Semiconductor msrt10060ad_thru_msrt100100ad-1132692.pdf Discrete Semiconductor Modules 600V 100A Forward
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MSRT10060(A)D MSRT10060(A)D GeneSiC Semiconductor msrt10060(a)d_thru_msrt100100(a)d.pdf Description: DIODE GEN PURP 600V 100A 3 TOWER
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MSRT10060AD MSRT10060AD GeneSiC Semiconductor msrt10060ad.pdf Description: DIODE MODULE GP 600V 100A 3TOWER
Packaging: Bulk
Package / Case: Three Tower
Mounting Type: Chassis Mount
Speed: Standard Recovery >500ns, > 200mA (Io)
Technology: Standard
Diode Configuration: 1 Pair Series Connection
Current - Average Rectified (Io) (per Diode): 100A
Supplier Device Package: Three Tower
Operating Temperature - Junction: -55°C ~ 150°C
Voltage - DC Reverse (Vr) (Max): 600 V
Voltage - Forward (Vf) (Max) @ If: 1.1 V @ 100 A
Current - Reverse Leakage @ Vr: 10 µA @ 600 V
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MSRT10060D MSRT10060D GeneSiC Semiconductor msrt100100d.pdf Description: DIODE MODULE GP 600V 100A 3TOWER
Packaging: Bulk
Package / Case: Three Tower
Mounting Type: Chassis Mount
Speed: Standard Recovery >500ns, > 200mA (Io)
Technology: Standard
Diode Configuration: 1 Pair Series Connection
Current - Average Rectified (Io) (per Diode): 100A
Supplier Device Package: Three Tower
Operating Temperature - Junction: -55°C ~ 150°C
Voltage - DC Reverse (Vr) (Max): 600 V
Voltage - Forward (Vf) (Max) @ If: 1.1 V @ 100 A
Current - Reverse Leakage @ Vr: 10 µA @ 600 V
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MSRT10060D MSRT10060D GeneSiC Semiconductor msrt10060d-2451945.pdf Discrete Semiconductor Modules 600V 100A Three Tower Silicon Rectifier Module - Standard Recovery (Standard Configuration)
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MSRT10080(A)D MSRT10080(A)D GeneSiC Semiconductor msrt10060ad_thru_msrt100100ad-1132692.pdf Schottky Diodes & Rectifiers 800V 100A Forward
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MSRT10080(A)D MSRT10080(A)D GeneSiC Semiconductor msrt100100(a)d.pdf Description: DIODE GEN PURP 800V 100A 3 TOWER
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MSRT10080AD MSRT10080AD GeneSiC Semiconductor msrt10080ad.pdf Description: DIODE MODULE GP 800V 100A 3TOWER
Packaging: Bulk
Package / Case: Three Tower
Mounting Type: Chassis Mount
Speed: Standard Recovery >500ns, > 200mA (Io)
Technology: Standard
Diode Configuration: 1 Pair Series Connection
Current - Average Rectified (Io) (per Diode): 100A
Supplier Device Package: Three Tower
Operating Temperature - Junction: -55°C ~ 150°C
Voltage - DC Reverse (Vr) (Max): 800 V
Voltage - Forward (Vf) (Max) @ If: 1.1 V @ 100 A
Current - Reverse Leakage @ Vr: 10 µA @ 800 V
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MSRT10080D MSRT10080D GeneSiC Semiconductor msrt100100d.pdf Description: DIODE MODULE GP 800V 100A 3TOWER
Packaging: Bulk
Package / Case: Three Tower
Mounting Type: Chassis Mount
Speed: Standard Recovery >500ns, > 200mA (Io)
Technology: Standard
Diode Configuration: 1 Pair Series Connection
Current - Average Rectified (Io) (per Diode): 100A
Supplier Device Package: Three Tower
Operating Temperature - Junction: -55°C ~ 150°C
Voltage - DC Reverse (Vr) (Max): 800 V
Voltage - Forward (Vf) (Max) @ If: 1.1 V @ 100 A
Current - Reverse Leakage @ Vr: 10 µA @ 800 V
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MSRT150100A MSRT150100A GeneSiC Semiconductor Description: DIODE MODULE 1KV 150A 3TOWER
Packaging: Bulk
Package / Case: Three Tower
Mounting Type: Chassis Mount
Speed: Standard Recovery >500ns, > 200mA (Io)
Technology: Standard
Diode Configuration: 1 Pair Common Cathode
Current - Average Rectified (Io) (per Diode): 150A
Supplier Device Package: Three Tower
Operating Temperature - Junction: -55°C ~ 150°C
Voltage - DC Reverse (Vr) (Max): 1000 V
Voltage - Forward (Vf) (Max) @ If: 1.2 V @ 150 A
Current - Reverse Leakage @ Vr: 10 µA @ 600 V
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MSRT150100(A) MSRT150100(A) GeneSiC Semiconductor msrt15060a_thru_msrt150100a.pdf Description: DIODE MODULE 1KV 150A 3TOWER
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MSRT150100(A)D MSRT150100(A)D GeneSiC Semiconductor msrt15060(a)d_thru_msrt150100(a)d.pdf Description: DIODE GEN 1KV 150A 3 TOWER
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MSRT150100AD MSRT150100AD GeneSiC Semiconductor Description: DIODE GEN 1KV 150A 3 TOWER
Packaging: Bulk
Package / Case: Three Tower
Mounting Type: Chassis Mount
Speed: Standard Recovery >500ns, > 200mA (Io)
Technology: Standard
Diode Configuration: 1 Pair Series Connection
Current - Average Rectified (Io) (per Diode): 150A
Supplier Device Package: Three Tower
Operating Temperature - Junction: -55°C ~ 150°C
Voltage - DC Reverse (Vr) (Max): 1000 V
Voltage - Forward (Vf) (Max) @ If: 1.1 V @ 150 A
Current - Reverse Leakage @ Vr: 10 µA @ 1000 V
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MSRT150100(A)D MSRT150100(A)D GeneSiC Semiconductor msrt15060ad_thru_msrt150100ad-1132828.pdf Discrete Semiconductor Modules 1000V 150A Forward
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MSRT150100D MSRT150100D GeneSiC Semiconductor msrt150100d-2452099.pdf Discrete Semiconductor Modules 1000V 150A Three Tower Silicon Rectifier Module - Standard Recovery (Standard Configuration)
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MSRT150100D GeneSiC Semiconductor msrt150100d.pdf Description: 1000V 150A THREE TOWER SILICON R
Packaging: Bulk
Package / Case: Three Tower
Mounting Type: Chassis Mount
Speed: Standard Recovery >500ns, > 200mA (Io)
Technology: Standard
Diode Configuration: 1 Pair Series Connection
Current - Average Rectified (Io) (per Diode): 150A
Supplier Device Package: Three Tower
Operating Temperature - Junction: -55°C ~ 150°C
Voltage - DC Reverse (Vr) (Max): 1000 V
Voltage - Forward (Vf) (Max) @ If: 1.1 V @ 150 A
Current - Reverse Leakage @ Vr: 10 µA @ 1000 V
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MSRT150120(A)D GeneSiC Semiconductor 266908775065775msrt150120ad_thru_msrt150160ad.pdf Silicon Standard Recovery Diode
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MSRT150120A MSRT150120A GeneSiC Semiconductor Description: DIODE MODULE 1.2KV 150A 3TOWER
Packaging: Bulk
Package / Case: Three Tower
Mounting Type: Chassis Mount
Speed: Standard Recovery >500ns, > 200mA (Io)
Technology: Standard
Diode Configuration: 1 Pair Common Cathode
Current - Average Rectified (Io) (per Diode): 150A
Supplier Device Package: Three Tower
Operating Temperature - Junction: -55°C ~ 150°C
Voltage - DC Reverse (Vr) (Max): 1200 V
Voltage - Forward (Vf) (Max) @ If: 1.2 V @ 150 A
Current - Reverse Leakage @ Vr: 10 µA @ 600 V
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MSRT150120(A) MSRT150120(A) GeneSiC Semiconductor msrt150120a_thru_msrt150160a.pdf Description: DIODE MODULE 1.2KV 150A 3TOWER
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MSRT150120(A)D MSRT150120(A)D GeneSiC Semiconductor msrt150120(a)d_thru_msrt150160(a)d.pdf Description: DIODE GEN 1.2KV 150A 3 TOWER
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MSRT150120(A)D MSRT150120(A)D GeneSiC Semiconductor msrt150120(a)d_thru_msrt150160(a)d-542013.pdf Discrete Semiconductor Modules 1200V 150A Forward
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MSRT150120AD MSRT150120AD GeneSiC Semiconductor Description: DIODE GEN 1.2KV 150A 3 TOWER
Packaging: Bulk
Package / Case: Three Tower
Mounting Type: Chassis Mount
Speed: Standard Recovery >500ns, > 200mA (Io)
Technology: Standard
Diode Configuration: 1 Pair Series Connection
Current - Average Rectified (Io) (per Diode): 150A
Supplier Device Package: Three Tower
Operating Temperature - Junction: -55°C ~ 150°C
Voltage - DC Reverse (Vr) (Max): 1200 V
Voltage - Forward (Vf) (Max) @ If: 1.1 V @ 150 A
Current - Reverse Leakage @ Vr: 10 µA @ 1200 V
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MSRT150120D MSRT150120D GeneSiC Semiconductor msrt150120d-2452012.pdf Discrete Semiconductor Modules 1200V 150A Three Tower Silicon Rectifier Module - Standard Recovery (Standard Configuration)
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MSRT150120D GeneSiC Semiconductor msrt150120d.pdf Description: 1200V 150A THREE TOWER SILICON R
Packaging: Bulk
Package / Case: Three Tower
Mounting Type: Chassis Mount
Speed: Standard Recovery >500ns, > 200mA (Io)
Technology: Standard
Diode Configuration: 1 Pair Series Connection
Current - Average Rectified (Io) (per Diode): 150A
Supplier Device Package: Three Tower
Operating Temperature - Junction: -55°C ~ 150°C
Voltage - DC Reverse (Vr) (Max): 1200 V
Voltage - Forward (Vf) (Max) @ If: 1.1 V @ 150 A
Current - Reverse Leakage @ Vr: 10 µA @ 1200 V
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MSRT150140(A) MSRT150140(A) GeneSiC Semiconductor msrt150120a_thru_msrt150160a.pdf Description: DIODE MODULE 1.4KV 150A 3TOWER
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MSRT150140A MSRT150140A GeneSiC Semiconductor Description: DIODE MODULE 1.4KV 150A 3TOWER
Packaging: Bulk
Package / Case: Three Tower
Mounting Type: Chassis Mount
Speed: Standard Recovery >500ns, > 200mA (Io)
Technology: Standard
Diode Configuration: 1 Pair Common Cathode
Current - Average Rectified (Io) (per Diode): 150A
Supplier Device Package: Three Tower
Operating Temperature - Junction: -55°C ~ 150°C
Voltage - DC Reverse (Vr) (Max): 1400 V
Voltage - Forward (Vf) (Max) @ If: 1.2 V @ 150 A
Current - Reverse Leakage @ Vr: 10 µA @ 600 V
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MSRT150140AD MSRT150140AD GeneSiC Semiconductor Description: DIODE GEN 1.4KV 150A 3 TOWER
Packaging: Bulk
Package / Case: Three Tower
Mounting Type: Chassis Mount
Speed: Standard Recovery >500ns, > 200mA (Io)
Technology: Standard
Diode Configuration: 1 Pair Series Connection
Current - Average Rectified (Io) (per Diode): 150A
Supplier Device Package: Three Tower
Operating Temperature - Junction: -55°C ~ 150°C
Voltage - DC Reverse (Vr) (Max): 1400 V
Voltage - Forward (Vf) (Max) @ If: 1.1 V @ 150 A
Current - Reverse Leakage @ Vr: 10 µA @ 1400 V
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MSRT150140(A)D MSRT150140(A)D GeneSiC Semiconductor msrt150120(a)d_thru_msrt150160(a)d-542013.pdf Discrete Semiconductor Modules 1400V 150A Forward
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MSRT150140(A)D MSRT150140(A)D GeneSiC Semiconductor msrt150120(a)d_thru_msrt150160(a)d.pdf Description: DIODE GEN 1.4KV 150A 3 TOWER
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MSRT150140D MSRT150140D GeneSiC Semiconductor msrt150140d-2452015.pdf Discrete Semiconductor Modules 1400V 150A Three Tower Silicon Rectifier Module - Standard Recovery (Standard Configuration)
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MSRT150140D GeneSiC Semiconductor msrt150120d.pdf Description: 1400V 150A THREE TOWER SILICON R
Packaging: Bulk
Package / Case: Three Tower
Mounting Type: Chassis Mount
Speed: Standard Recovery >500ns, > 200mA (Io)
Technology: Standard
Diode Configuration: 1 Pair Series Connection
Current - Average Rectified (Io) (per Diode): 150A
Supplier Device Package: Three Tower
Operating Temperature - Junction: -55°C ~ 150°C
Voltage - DC Reverse (Vr) (Max): 1400 V
Voltage - Forward (Vf) (Max) @ If: 1.1 V @ 150 A
Current - Reverse Leakage @ Vr: 10 µA @ 1400 V
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MSRT150160A MSRT150160A GeneSiC Semiconductor Description: DIODE MODULE 1.6KV 150A 3TOWER
Packaging: Bulk
Package / Case: Three Tower
Mounting Type: Chassis Mount
Speed: Standard Recovery >500ns, > 200mA (Io)
Technology: Standard
Diode Configuration: 1 Pair Common Cathode
Current - Average Rectified (Io) (per Diode): 150A
Supplier Device Package: Three Tower
Operating Temperature - Junction: -55°C ~ 150°C
Voltage - DC Reverse (Vr) (Max): 1600 V
Voltage - Forward (Vf) (Max) @ If: 1.2 V @ 150 A
Current - Reverse Leakage @ Vr: 10 µA @ 600 V
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MSRT150160(A) MSRT150160(A) GeneSiC Semiconductor msrt150120a_thru_msrt150160a.pdf Description: DIODE MODULE 1.6KV 150A 3TOWER
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MSRT150160AD MSRT150160AD GeneSiC Semiconductor Description: DIODE GEN 1.6KV 150A 3 TOWER
Packaging: Bulk
Package / Case: Three Tower
Mounting Type: Chassis Mount
Speed: Standard Recovery >500ns, > 200mA (Io)
Technology: Standard
Diode Configuration: 1 Pair Series Connection
Current - Average Rectified (Io) (per Diode): 150A
Supplier Device Package: Three Tower
Operating Temperature - Junction: -55°C ~ 150°C
Voltage - DC Reverse (Vr) (Max): 1600 V
Voltage - Forward (Vf) (Max) @ If: 1.1 V @ 150 A
Current - Reverse Leakage @ Vr: 10 µA @ 1600 V
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MSRT150160(A)D MSRT150160(A)D GeneSiC Semiconductor msrt150120(a)d_thru_msrt150160(a)d-542013.pdf Discrete Semiconductor Modules 1600V 150A Forward
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MSRT150160(A)D MSRT150160(A)D GeneSiC Semiconductor msrt150120(a)d_thru_msrt150160(a)d.pdf Description: DIODE GEN 1.6KV 150A 3 TOWER
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В кошику  од. на суму  грн.
MSRT150160D GeneSiC Semiconductor msrt150120d.pdf Description: 1600V 150A THREE TOWER SILICON R
Packaging: Bulk
Package / Case: Three Tower
Mounting Type: Chassis Mount
Speed: Standard Recovery >500ns, > 200mA (Io)
Technology: Standard
Diode Configuration: 1 Pair Series Connection
Current - Average Rectified (Io) (per Diode): 150A
Supplier Device Package: Three Tower
Operating Temperature - Junction: -55°C ~ 150°C
Voltage - DC Reverse (Vr) (Max): 1600 V
Voltage - Forward (Vf) (Max) @ If: 1.1 V @ 150 A
Current - Reverse Leakage @ Vr: 10 µA @ 1600 V
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MSRT150160D MSRT150160D GeneSiC Semiconductor msrt150160d-2451888.pdf Discrete Semiconductor Modules 1600V 150A Three Tower Silicon Rectifier Module - Standard Recovery (Standard Configuration)
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MSRT15060A MSRT15060A GeneSiC Semiconductor Description: DIODE MODULE 600V 150A 3TOWER
Packaging: Bulk
Package / Case: Three Tower
Mounting Type: Chassis Mount
Speed: Standard Recovery >500ns, > 200mA (Io)
Technology: Standard
Diode Configuration: 1 Pair Common Cathode
Current - Average Rectified (Io) (per Diode): 150A
Supplier Device Package: Three Tower
Operating Temperature - Junction: -55°C ~ 150°C
Voltage - DC Reverse (Vr) (Max): 600 V
Voltage - Forward (Vf) (Max) @ If: 1.2 V @ 150 A
Current - Reverse Leakage @ Vr: 10 µA @ 600 V
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MSRT15060(A) MSRT15060(A) GeneSiC Semiconductor Description: DIODE MODULE 600V 150A 3TOWER
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MSRT15060AD MSRT15060AD GeneSiC Semiconductor Description: DIODE GEN PURP 600V 150A 3 TOWER
Packaging: Bulk
Package / Case: Three Tower
Mounting Type: Chassis Mount
Speed: Standard Recovery >500ns, > 200mA (Io)
Technology: Standard
Diode Configuration: 1 Pair Series Connection
Current - Average Rectified (Io) (per Diode): 150A
Supplier Device Package: Three Tower
Operating Temperature - Junction: -55°C ~ 150°C
Voltage - DC Reverse (Vr) (Max): 600 V
Voltage - Forward (Vf) (Max) @ If: 1.1 V @ 150 A
Current - Reverse Leakage @ Vr: 10 µA @ 600 V
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В кошику  од. на суму  грн.
MDS75-08
Виробник: GeneSiC Semiconductor
GeneSiC
товару немає в наявності
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MDS75-12
Виробник: GeneSiC Semiconductor
GeneSiC
товару немає в наявності
В кошику  од. на суму  грн.
MDS75-16
Виробник: GeneSiC Semiconductor
GeneSiC
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MSRT100100(A)D msrt10060ad_thru_msrt100100ad-1132692.pdf
MSRT100100(A)D
Виробник: GeneSiC Semiconductor
Schottky Diodes & Rectifiers 1000V 100A Forward
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MSRT100100(A)D msrt10060(a)d_thru_msrt100100(a)d.pdf
MSRT100100(A)D
Виробник: GeneSiC Semiconductor
Description: DIODE GEN 1KV 100A 3 TOWER
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В кошику  од. на суму  грн.
MSRT100100AD msrt100100ad.pdf
MSRT100100AD
Виробник: GeneSiC Semiconductor
Description: DIODE MOD GP 1000V 100A 3TOWER
Packaging: Bulk
Package / Case: Three Tower
Mounting Type: Chassis Mount
Speed: Standard Recovery >500ns, > 200mA (Io)
Technology: Standard
Diode Configuration: 1 Pair Series Connection
Current - Average Rectified (Io) (per Diode): 100A
Supplier Device Package: Three Tower
Operating Temperature - Junction: -55°C ~ 150°C
Voltage - DC Reverse (Vr) (Max): 1000 V
Voltage - Forward (Vf) (Max) @ If: 1.1 V @ 100 A
Current - Reverse Leakage @ Vr: 10 µA @ 1000 V
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В кошику  од. на суму  грн.
MSRT100100D msrt100100d.pdf
MSRT100100D
Виробник: GeneSiC Semiconductor
Description: DIODE MOD GP 1000V 100A 3TOWER
Packaging: Bulk
Package / Case: Three Tower
Mounting Type: Chassis Mount
Speed: Standard Recovery >500ns, > 200mA (Io)
Technology: Standard
Diode Configuration: 1 Pair Series Connection
Current - Average Rectified (Io) (per Diode): 100A
Supplier Device Package: Three Tower
Operating Temperature - Junction: -55°C ~ 150°C
Voltage - DC Reverse (Vr) (Max): 1000 V
Voltage - Forward (Vf) (Max) @ If: 1.1 V @ 100 A
Current - Reverse Leakage @ Vr: 10 µA @ 1000 V
товару немає в наявності
В кошику  од. на суму  грн.
MSRT100120AD msrt100120ad.pdf
MSRT100120AD
Виробник: GeneSiC Semiconductor
Description: DIODE MOD GP 1200V 100A 3TOWER
Packaging: Bulk
Package / Case: Three Tower
Mounting Type: Chassis Mount
Speed: Standard Recovery >500ns, > 200mA (Io)
Technology: Standard
Diode Configuration: 1 Pair Series Connection
Current - Average Rectified (Io) (per Diode): 100A
Supplier Device Package: Three Tower
Operating Temperature - Junction: -55°C ~ 150°C
Voltage - DC Reverse (Vr) (Max): 1200 V
Voltage - Forward (Vf) (Max) @ If: 1.1 V @ 100 A
Current - Reverse Leakage @ Vr: 10 µA @ 1200 V
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В кошику  од. на суму  грн.
MSRT100120(A)D msrt100120(a)d_thru_msrt100160(a)d.pdf
MSRT100120(A)D
Виробник: GeneSiC Semiconductor
Description: DIODE GEN 1.2KV 100A 3 TOWER
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В кошику  од. на суму  грн.
MSRT100120(A)D msrt100120ad_thru_msrt100160ad-1133132.pdf
MSRT100120(A)D
Виробник: GeneSiC Semiconductor
Schottky Diodes & Rectifiers 1200V 100A Forward
товару немає в наявності
В кошику  од. на суму  грн.
MSRT100120D msrt100160d.pdf
MSRT100120D
Виробник: GeneSiC Semiconductor
Description: DIODE MOD GP 1200V 100A 3TOWER
Packaging: Bulk
Package / Case: Three Tower
Mounting Type: Chassis Mount
Speed: Standard Recovery >500ns, > 200mA (Io)
Technology: Standard
Diode Configuration: 1 Pair Series Connection
Current - Average Rectified (Io) (per Diode): 100A
Supplier Device Package: Three Tower
Operating Temperature - Junction: -55°C ~ 150°C
Voltage - DC Reverse (Vr) (Max): 1200 V
Voltage - Forward (Vf) (Max) @ If: 1.1 V @ 100 A
Current - Reverse Leakage @ Vr: 10 µA @ 1200 V
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MSRT100140(A)D msrt100120(a)d_thru_msrt100160(a)d.pdf
MSRT100140(A)D
Виробник: GeneSiC Semiconductor
Description: DIODE GEN 1.4KV 100A 3 TOWER
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В кошику  од. на суму  грн.
MSRT100140AD msrt100140ad.pdf
MSRT100140AD
Виробник: GeneSiC Semiconductor
Description: DIODE MOD GP 1400V 100A 3TOWER
Packaging: Bulk
Package / Case: Three Tower
Mounting Type: Chassis Mount
Speed: Standard Recovery >500ns, > 200mA (Io)
Technology: Standard
Diode Configuration: 1 Pair Series Connection
Current - Average Rectified (Io) (per Diode): 100A
Supplier Device Package: Three Tower
Operating Temperature - Junction: -55°C ~ 150°C
Voltage - DC Reverse (Vr) (Max): 1400 V
Voltage - Forward (Vf) (Max) @ If: 1.1 V @ 100 A
Current - Reverse Leakage @ Vr: 10 µA @ 1400 V
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MSRT100140(A)D msrt100120ad_thru_msrt100160ad-1133132.pdf
MSRT100140(A)D
Виробник: GeneSiC Semiconductor
Schottky Diodes & Rectifiers 1400V 100A Forward
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В кошику  од. на суму  грн.
MSRT100140D msrt100160d.pdf
MSRT100140D
Виробник: GeneSiC Semiconductor
Description: DIODE MOD GP 1400V 100A 3TOWER
Packaging: Bulk
Package / Case: Three Tower
Mounting Type: Chassis Mount
Speed: Standard Recovery >500ns, > 200mA (Io)
Technology: Standard
Diode Configuration: 1 Pair Series Connection
Current - Average Rectified (Io) (per Diode): 100A
Supplier Device Package: Three Tower
Operating Temperature - Junction: -55°C ~ 150°C
Voltage - DC Reverse (Vr) (Max): 1400 V
Voltage - Forward (Vf) (Max) @ If: 1.1 V @ 100 A
Current - Reverse Leakage @ Vr: 10 µA @ 1400 V
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В кошику  од. на суму  грн.
MSRT100160(A)D msrt100120(a)d_thru_msrt100160(a)d.pdf
MSRT100160(A)D
Виробник: GeneSiC Semiconductor
Description: DIODE GEN 1.6KV 100A 3 TOWER
товару немає в наявності
В кошику  од. на суму  грн.
MSRT100160AD msrt100160ad.pdf
MSRT100160AD
Виробник: GeneSiC Semiconductor
Description: DIODE MOD GP 1600V 100A 3TOWER
Packaging: Bulk
Package / Case: Three Tower
Mounting Type: Chassis Mount
Speed: Standard Recovery >500ns, > 200mA (Io)
Technology: Standard
Diode Configuration: 1 Pair Series Connection
Current - Average Rectified (Io) (per Diode): 100A
Supplier Device Package: Three Tower
Operating Temperature - Junction: -55°C ~ 150°C
Voltage - DC Reverse (Vr) (Max): 1600 V
Voltage - Forward (Vf) (Max) @ If: 1.1 V @ 100 A
Current - Reverse Leakage @ Vr: 10 µA @ 1600 V
товару немає в наявності
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MSRT100160(A)D msrt100120ad_thru_msrt100160ad-1133132.pdf
MSRT100160(A)D
Виробник: GeneSiC Semiconductor
Discrete Semiconductor Modules 1600V 100A Forward
товару немає в наявності
В кошику  од. на суму  грн.
MSRT100160D msrt100160d.pdf
MSRT100160D
Виробник: GeneSiC Semiconductor
Description: DIODE MOD GP 1600V 100A 3TOWER
Packaging: Bulk
Package / Case: Three Tower
Mounting Type: Chassis Mount
Speed: Standard Recovery >500ns, > 200mA (Io)
Technology: Standard
Diode Configuration: 1 Pair Series Connection
Current - Average Rectified (Io) (per Diode): 100A
Supplier Device Package: Three Tower
Operating Temperature - Junction: -55°C ~ 150°C
Voltage - DC Reverse (Vr) (Max): 1600 V
Voltage - Forward (Vf) (Max) @ If: 1.1 V @ 100 A
Current - Reverse Leakage @ Vr: 10 µA @ 1600 V
товару немає в наявності
В кошику  од. на суму  грн.
MSRT10060(A)D msrt10060ad_thru_msrt100100ad-1132692.pdf
MSRT10060(A)D
Виробник: GeneSiC Semiconductor
Discrete Semiconductor Modules 600V 100A Forward
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В кошику  од. на суму  грн.
MSRT10060(A)D msrt10060(a)d_thru_msrt100100(a)d.pdf
MSRT10060(A)D
Виробник: GeneSiC Semiconductor
Description: DIODE GEN PURP 600V 100A 3 TOWER
товару немає в наявності
В кошику  од. на суму  грн.
MSRT10060AD msrt10060ad.pdf
MSRT10060AD
Виробник: GeneSiC Semiconductor
Description: DIODE MODULE GP 600V 100A 3TOWER
Packaging: Bulk
Package / Case: Three Tower
Mounting Type: Chassis Mount
Speed: Standard Recovery >500ns, > 200mA (Io)
Technology: Standard
Diode Configuration: 1 Pair Series Connection
Current - Average Rectified (Io) (per Diode): 100A
Supplier Device Package: Three Tower
Operating Temperature - Junction: -55°C ~ 150°C
Voltage - DC Reverse (Vr) (Max): 600 V
Voltage - Forward (Vf) (Max) @ If: 1.1 V @ 100 A
Current - Reverse Leakage @ Vr: 10 µA @ 600 V
товару немає в наявності
В кошику  од. на суму  грн.
MSRT10060D msrt100100d.pdf
MSRT10060D
Виробник: GeneSiC Semiconductor
Description: DIODE MODULE GP 600V 100A 3TOWER
Packaging: Bulk
Package / Case: Three Tower
Mounting Type: Chassis Mount
Speed: Standard Recovery >500ns, > 200mA (Io)
Technology: Standard
Diode Configuration: 1 Pair Series Connection
Current - Average Rectified (Io) (per Diode): 100A
Supplier Device Package: Three Tower
Operating Temperature - Junction: -55°C ~ 150°C
Voltage - DC Reverse (Vr) (Max): 600 V
Voltage - Forward (Vf) (Max) @ If: 1.1 V @ 100 A
Current - Reverse Leakage @ Vr: 10 µA @ 600 V
товару немає в наявності
В кошику  од. на суму  грн.
MSRT10060D msrt10060d-2451945.pdf
MSRT10060D
Виробник: GeneSiC Semiconductor
Discrete Semiconductor Modules 600V 100A Three Tower Silicon Rectifier Module - Standard Recovery (Standard Configuration)
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В кошику  од. на суму  грн.
MSRT10080(A)D msrt10060ad_thru_msrt100100ad-1132692.pdf
MSRT10080(A)D
Виробник: GeneSiC Semiconductor
Schottky Diodes & Rectifiers 800V 100A Forward
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В кошику  од. на суму  грн.
MSRT10080(A)D msrt100100(a)d.pdf
MSRT10080(A)D
Виробник: GeneSiC Semiconductor
Description: DIODE GEN PURP 800V 100A 3 TOWER
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В кошику  од. на суму  грн.
MSRT10080AD msrt10080ad.pdf
MSRT10080AD
Виробник: GeneSiC Semiconductor
Description: DIODE MODULE GP 800V 100A 3TOWER
Packaging: Bulk
Package / Case: Three Tower
Mounting Type: Chassis Mount
Speed: Standard Recovery >500ns, > 200mA (Io)
Technology: Standard
Diode Configuration: 1 Pair Series Connection
Current - Average Rectified (Io) (per Diode): 100A
Supplier Device Package: Three Tower
Operating Temperature - Junction: -55°C ~ 150°C
Voltage - DC Reverse (Vr) (Max): 800 V
Voltage - Forward (Vf) (Max) @ If: 1.1 V @ 100 A
Current - Reverse Leakage @ Vr: 10 µA @ 800 V
товару немає в наявності
В кошику  од. на суму  грн.
MSRT10080D msrt100100d.pdf
MSRT10080D
Виробник: GeneSiC Semiconductor
Description: DIODE MODULE GP 800V 100A 3TOWER
Packaging: Bulk
Package / Case: Three Tower
Mounting Type: Chassis Mount
Speed: Standard Recovery >500ns, > 200mA (Io)
Technology: Standard
Diode Configuration: 1 Pair Series Connection
Current - Average Rectified (Io) (per Diode): 100A
Supplier Device Package: Three Tower
Operating Temperature - Junction: -55°C ~ 150°C
Voltage - DC Reverse (Vr) (Max): 800 V
Voltage - Forward (Vf) (Max) @ If: 1.1 V @ 100 A
Current - Reverse Leakage @ Vr: 10 µA @ 800 V
товару немає в наявності
В кошику  од. на суму  грн.
MSRT150100A
MSRT150100A
Виробник: GeneSiC Semiconductor
Description: DIODE MODULE 1KV 150A 3TOWER
Packaging: Bulk
Package / Case: Three Tower
Mounting Type: Chassis Mount
Speed: Standard Recovery >500ns, > 200mA (Io)
Technology: Standard
Diode Configuration: 1 Pair Common Cathode
Current - Average Rectified (Io) (per Diode): 150A
Supplier Device Package: Three Tower
Operating Temperature - Junction: -55°C ~ 150°C
Voltage - DC Reverse (Vr) (Max): 1000 V
Voltage - Forward (Vf) (Max) @ If: 1.2 V @ 150 A
Current - Reverse Leakage @ Vr: 10 µA @ 600 V
товару немає в наявності
В кошику  од. на суму  грн.
MSRT150100(A) msrt15060a_thru_msrt150100a.pdf
MSRT150100(A)
Виробник: GeneSiC Semiconductor
Description: DIODE MODULE 1KV 150A 3TOWER
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MSRT150100(A)D msrt15060(a)d_thru_msrt150100(a)d.pdf
MSRT150100(A)D
Виробник: GeneSiC Semiconductor
Description: DIODE GEN 1KV 150A 3 TOWER
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В кошику  од. на суму  грн.
MSRT150100AD
MSRT150100AD
Виробник: GeneSiC Semiconductor
Description: DIODE GEN 1KV 150A 3 TOWER
Packaging: Bulk
Package / Case: Three Tower
Mounting Type: Chassis Mount
Speed: Standard Recovery >500ns, > 200mA (Io)
Technology: Standard
Diode Configuration: 1 Pair Series Connection
Current - Average Rectified (Io) (per Diode): 150A
Supplier Device Package: Three Tower
Operating Temperature - Junction: -55°C ~ 150°C
Voltage - DC Reverse (Vr) (Max): 1000 V
Voltage - Forward (Vf) (Max) @ If: 1.1 V @ 150 A
Current - Reverse Leakage @ Vr: 10 µA @ 1000 V
товару немає в наявності
В кошику  од. на суму  грн.
MSRT150100(A)D msrt15060ad_thru_msrt150100ad-1132828.pdf
MSRT150100(A)D
Виробник: GeneSiC Semiconductor
Discrete Semiconductor Modules 1000V 150A Forward
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В кошику  од. на суму  грн.
MSRT150100D msrt150100d-2452099.pdf
MSRT150100D
Виробник: GeneSiC Semiconductor
Discrete Semiconductor Modules 1000V 150A Three Tower Silicon Rectifier Module - Standard Recovery (Standard Configuration)
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В кошику  од. на суму  грн.
MSRT150100D msrt150100d.pdf
Виробник: GeneSiC Semiconductor
Description: 1000V 150A THREE TOWER SILICON R
Packaging: Bulk
Package / Case: Three Tower
Mounting Type: Chassis Mount
Speed: Standard Recovery >500ns, > 200mA (Io)
Technology: Standard
Diode Configuration: 1 Pair Series Connection
Current - Average Rectified (Io) (per Diode): 150A
Supplier Device Package: Three Tower
Operating Temperature - Junction: -55°C ~ 150°C
Voltage - DC Reverse (Vr) (Max): 1000 V
Voltage - Forward (Vf) (Max) @ If: 1.1 V @ 150 A
Current - Reverse Leakage @ Vr: 10 µA @ 1000 V
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MSRT150120(A)D 266908775065775msrt150120ad_thru_msrt150160ad.pdf
Виробник: GeneSiC Semiconductor
Silicon Standard Recovery Diode
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В кошику  од. на суму  грн.
MSRT150120A
MSRT150120A
Виробник: GeneSiC Semiconductor
Description: DIODE MODULE 1.2KV 150A 3TOWER
Packaging: Bulk
Package / Case: Three Tower
Mounting Type: Chassis Mount
Speed: Standard Recovery >500ns, > 200mA (Io)
Technology: Standard
Diode Configuration: 1 Pair Common Cathode
Current - Average Rectified (Io) (per Diode): 150A
Supplier Device Package: Three Tower
Operating Temperature - Junction: -55°C ~ 150°C
Voltage - DC Reverse (Vr) (Max): 1200 V
Voltage - Forward (Vf) (Max) @ If: 1.2 V @ 150 A
Current - Reverse Leakage @ Vr: 10 µA @ 600 V
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MSRT150120(A) msrt150120a_thru_msrt150160a.pdf
MSRT150120(A)
Виробник: GeneSiC Semiconductor
Description: DIODE MODULE 1.2KV 150A 3TOWER
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MSRT150120(A)D msrt150120(a)d_thru_msrt150160(a)d.pdf
MSRT150120(A)D
Виробник: GeneSiC Semiconductor
Description: DIODE GEN 1.2KV 150A 3 TOWER
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В кошику  од. на суму  грн.
MSRT150120(A)D msrt150120(a)d_thru_msrt150160(a)d-542013.pdf
MSRT150120(A)D
Виробник: GeneSiC Semiconductor
Discrete Semiconductor Modules 1200V 150A Forward
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В кошику  од. на суму  грн.
MSRT150120AD
MSRT150120AD
Виробник: GeneSiC Semiconductor
Description: DIODE GEN 1.2KV 150A 3 TOWER
Packaging: Bulk
Package / Case: Three Tower
Mounting Type: Chassis Mount
Speed: Standard Recovery >500ns, > 200mA (Io)
Technology: Standard
Diode Configuration: 1 Pair Series Connection
Current - Average Rectified (Io) (per Diode): 150A
Supplier Device Package: Three Tower
Operating Temperature - Junction: -55°C ~ 150°C
Voltage - DC Reverse (Vr) (Max): 1200 V
Voltage - Forward (Vf) (Max) @ If: 1.1 V @ 150 A
Current - Reverse Leakage @ Vr: 10 µA @ 1200 V
товару немає в наявності
В кошику  од. на суму  грн.
MSRT150120D msrt150120d-2452012.pdf
MSRT150120D
Виробник: GeneSiC Semiconductor
Discrete Semiconductor Modules 1200V 150A Three Tower Silicon Rectifier Module - Standard Recovery (Standard Configuration)
товару немає в наявності
В кошику  од. на суму  грн.
MSRT150120D msrt150120d.pdf
Виробник: GeneSiC Semiconductor
Description: 1200V 150A THREE TOWER SILICON R
Packaging: Bulk
Package / Case: Three Tower
Mounting Type: Chassis Mount
Speed: Standard Recovery >500ns, > 200mA (Io)
Technology: Standard
Diode Configuration: 1 Pair Series Connection
Current - Average Rectified (Io) (per Diode): 150A
Supplier Device Package: Three Tower
Operating Temperature - Junction: -55°C ~ 150°C
Voltage - DC Reverse (Vr) (Max): 1200 V
Voltage - Forward (Vf) (Max) @ If: 1.1 V @ 150 A
Current - Reverse Leakage @ Vr: 10 µA @ 1200 V
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MSRT150140(A) msrt150120a_thru_msrt150160a.pdf
MSRT150140(A)
Виробник: GeneSiC Semiconductor
Description: DIODE MODULE 1.4KV 150A 3TOWER
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MSRT150140A
MSRT150140A
Виробник: GeneSiC Semiconductor
Description: DIODE MODULE 1.4KV 150A 3TOWER
Packaging: Bulk
Package / Case: Three Tower
Mounting Type: Chassis Mount
Speed: Standard Recovery >500ns, > 200mA (Io)
Technology: Standard
Diode Configuration: 1 Pair Common Cathode
Current - Average Rectified (Io) (per Diode): 150A
Supplier Device Package: Three Tower
Operating Temperature - Junction: -55°C ~ 150°C
Voltage - DC Reverse (Vr) (Max): 1400 V
Voltage - Forward (Vf) (Max) @ If: 1.2 V @ 150 A
Current - Reverse Leakage @ Vr: 10 µA @ 600 V
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MSRT150140AD
MSRT150140AD
Виробник: GeneSiC Semiconductor
Description: DIODE GEN 1.4KV 150A 3 TOWER
Packaging: Bulk
Package / Case: Three Tower
Mounting Type: Chassis Mount
Speed: Standard Recovery >500ns, > 200mA (Io)
Technology: Standard
Diode Configuration: 1 Pair Series Connection
Current - Average Rectified (Io) (per Diode): 150A
Supplier Device Package: Three Tower
Operating Temperature - Junction: -55°C ~ 150°C
Voltage - DC Reverse (Vr) (Max): 1400 V
Voltage - Forward (Vf) (Max) @ If: 1.1 V @ 150 A
Current - Reverse Leakage @ Vr: 10 µA @ 1400 V
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MSRT150140(A)D msrt150120(a)d_thru_msrt150160(a)d-542013.pdf
MSRT150140(A)D
Виробник: GeneSiC Semiconductor
Discrete Semiconductor Modules 1400V 150A Forward
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MSRT150140(A)D msrt150120(a)d_thru_msrt150160(a)d.pdf
MSRT150140(A)D
Виробник: GeneSiC Semiconductor
Description: DIODE GEN 1.4KV 150A 3 TOWER
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MSRT150140D msrt150140d-2452015.pdf
MSRT150140D
Виробник: GeneSiC Semiconductor
Discrete Semiconductor Modules 1400V 150A Three Tower Silicon Rectifier Module - Standard Recovery (Standard Configuration)
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MSRT150140D msrt150120d.pdf
Виробник: GeneSiC Semiconductor
Description: 1400V 150A THREE TOWER SILICON R
Packaging: Bulk
Package / Case: Three Tower
Mounting Type: Chassis Mount
Speed: Standard Recovery >500ns, > 200mA (Io)
Technology: Standard
Diode Configuration: 1 Pair Series Connection
Current - Average Rectified (Io) (per Diode): 150A
Supplier Device Package: Three Tower
Operating Temperature - Junction: -55°C ~ 150°C
Voltage - DC Reverse (Vr) (Max): 1400 V
Voltage - Forward (Vf) (Max) @ If: 1.1 V @ 150 A
Current - Reverse Leakage @ Vr: 10 µA @ 1400 V
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MSRT150160A
MSRT150160A
Виробник: GeneSiC Semiconductor
Description: DIODE MODULE 1.6KV 150A 3TOWER
Packaging: Bulk
Package / Case: Three Tower
Mounting Type: Chassis Mount
Speed: Standard Recovery >500ns, > 200mA (Io)
Technology: Standard
Diode Configuration: 1 Pair Common Cathode
Current - Average Rectified (Io) (per Diode): 150A
Supplier Device Package: Three Tower
Operating Temperature - Junction: -55°C ~ 150°C
Voltage - DC Reverse (Vr) (Max): 1600 V
Voltage - Forward (Vf) (Max) @ If: 1.2 V @ 150 A
Current - Reverse Leakage @ Vr: 10 µA @ 600 V
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MSRT150160(A) msrt150120a_thru_msrt150160a.pdf
MSRT150160(A)
Виробник: GeneSiC Semiconductor
Description: DIODE MODULE 1.6KV 150A 3TOWER
товару немає в наявності
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MSRT150160AD
MSRT150160AD
Виробник: GeneSiC Semiconductor
Description: DIODE GEN 1.6KV 150A 3 TOWER
Packaging: Bulk
Package / Case: Three Tower
Mounting Type: Chassis Mount
Speed: Standard Recovery >500ns, > 200mA (Io)
Technology: Standard
Diode Configuration: 1 Pair Series Connection
Current - Average Rectified (Io) (per Diode): 150A
Supplier Device Package: Three Tower
Operating Temperature - Junction: -55°C ~ 150°C
Voltage - DC Reverse (Vr) (Max): 1600 V
Voltage - Forward (Vf) (Max) @ If: 1.1 V @ 150 A
Current - Reverse Leakage @ Vr: 10 µA @ 1600 V
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MSRT150160(A)D msrt150120(a)d_thru_msrt150160(a)d-542013.pdf
MSRT150160(A)D
Виробник: GeneSiC Semiconductor
Discrete Semiconductor Modules 1600V 150A Forward
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MSRT150160(A)D msrt150120(a)d_thru_msrt150160(a)d.pdf
MSRT150160(A)D
Виробник: GeneSiC Semiconductor
Description: DIODE GEN 1.6KV 150A 3 TOWER
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MSRT150160D msrt150120d.pdf
Виробник: GeneSiC Semiconductor
Description: 1600V 150A THREE TOWER SILICON R
Packaging: Bulk
Package / Case: Three Tower
Mounting Type: Chassis Mount
Speed: Standard Recovery >500ns, > 200mA (Io)
Technology: Standard
Diode Configuration: 1 Pair Series Connection
Current - Average Rectified (Io) (per Diode): 150A
Supplier Device Package: Three Tower
Operating Temperature - Junction: -55°C ~ 150°C
Voltage - DC Reverse (Vr) (Max): 1600 V
Voltage - Forward (Vf) (Max) @ If: 1.1 V @ 150 A
Current - Reverse Leakage @ Vr: 10 µA @ 1600 V
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MSRT150160D msrt150160d-2451888.pdf
MSRT150160D
Виробник: GeneSiC Semiconductor
Discrete Semiconductor Modules 1600V 150A Three Tower Silicon Rectifier Module - Standard Recovery (Standard Configuration)
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MSRT15060A
MSRT15060A
Виробник: GeneSiC Semiconductor
Description: DIODE MODULE 600V 150A 3TOWER
Packaging: Bulk
Package / Case: Three Tower
Mounting Type: Chassis Mount
Speed: Standard Recovery >500ns, > 200mA (Io)
Technology: Standard
Diode Configuration: 1 Pair Common Cathode
Current - Average Rectified (Io) (per Diode): 150A
Supplier Device Package: Three Tower
Operating Temperature - Junction: -55°C ~ 150°C
Voltage - DC Reverse (Vr) (Max): 600 V
Voltage - Forward (Vf) (Max) @ If: 1.2 V @ 150 A
Current - Reverse Leakage @ Vr: 10 µA @ 600 V
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MSRT15060(A)
MSRT15060(A)
Виробник: GeneSiC Semiconductor
Description: DIODE MODULE 600V 150A 3TOWER
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MSRT15060AD
MSRT15060AD
Виробник: GeneSiC Semiconductor
Description: DIODE GEN PURP 600V 150A 3 TOWER
Packaging: Bulk
Package / Case: Three Tower
Mounting Type: Chassis Mount
Speed: Standard Recovery >500ns, > 200mA (Io)
Technology: Standard
Diode Configuration: 1 Pair Series Connection
Current - Average Rectified (Io) (per Diode): 150A
Supplier Device Package: Three Tower
Operating Temperature - Junction: -55°C ~ 150°C
Voltage - DC Reverse (Vr) (Max): 600 V
Voltage - Forward (Vf) (Max) @ If: 1.1 V @ 150 A
Current - Reverse Leakage @ Vr: 10 µA @ 600 V
товару немає в наявності
В кошику  од. на суму  грн.
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