Продукція > GENESIC SEMICONDUCTOR > Всі товари виробника GENESIC SEMICONDUCTOR (4217) > Сторінка 59 з 71
| Фото | Назва | Виробник | Інформація |
Доступність |
Ціна |
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MUR2520 | GeneSiC Semiconductor |
Rectifiers 200V 25A Super Fast Recovery |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||||
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MUR2520R | GeneSiC Semiconductor |
Rectifiers 200V 25A REV Leads Super Fast Recovery |
на замовлення 135 шт: термін постачання 21-30 дні (днів) |
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| MUR2520R | GeneSiC Semiconductor |
Description: DIODE GEN PURP REV 200V 25A DO4Packaging: Bulk Package / Case: DO-203AA, DO-4, Stud Mounting Type: Chassis, Stud Mount Speed: Fast Recovery =< 500ns, > 200mA (Io) Reverse Recovery Time (trr): 75 ns Technology: Standard, Reverse Polarity Current - Average Rectified (Io): 25A Supplier Device Package: DO-4 Operating Temperature - Junction: -55°C ~ 150°C Voltage - DC Reverse (Vr) (Max): 200 V Voltage - Forward (Vf) (Max) @ If: 1 V @ 25 A Current - Reverse Leakage @ Vr: 10 µA @ 50 V |
товару немає в наявності |
В кошику од. на суму грн. | |||||||||||
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MUR2540 | GeneSiC Semiconductor |
Rectifiers 400V 25A Super Fast Recovery |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||||
| MUR2540 | GeneSiC Semiconductor |
Description: DIODE GEN PURP 400V 25A DO4Packaging: Bulk Package / Case: DO-203AA, DO-4, Stud Mounting Type: Chassis, Stud Mount Speed: Fast Recovery =< 500ns, > 200mA (Io) Reverse Recovery Time (trr): 75 ns Technology: Standard Current - Average Rectified (Io): 25A Supplier Device Package: DO-4 Operating Temperature - Junction: -55°C ~ 150°C Voltage - DC Reverse (Vr) (Max): 400 V Voltage - Forward (Vf) (Max) @ If: 1.3 V @ 25 A Current - Reverse Leakage @ Vr: 10 µA @ 50 V |
товару немає в наявності |
В кошику од. на суму грн. | |||||||||||
| MUR2540R | GeneSiC Semiconductor |
Description: DIODE GEN PURP REV 400V 25A DO4Packaging: Bulk Package / Case: DO-203AA, DO-4, Stud Mounting Type: Chassis, Stud Mount Speed: Fast Recovery =< 500ns, > 200mA (Io) Reverse Recovery Time (trr): 75 ns Technology: Standard, Reverse Polarity Current - Average Rectified (Io): 25A Supplier Device Package: DO-4 Operating Temperature - Junction: -55°C ~ 150°C Voltage - DC Reverse (Vr) (Max): 400 V Voltage - Forward (Vf) (Max) @ If: 1.3 V @ 25 A Current - Reverse Leakage @ Vr: 10 µA @ 50 V |
товару немає в наявності |
В кошику од. на суму грн. | |||||||||||
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MUR2540R | GeneSiC Semiconductor |
Rectifiers 400V 25A REV Leads Super Fast Recovery |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||||
| MUR2560 | GeneSiC Semiconductor |
Description: DIODE GEN PURP 600V 25A DO4Packaging: Bulk Package / Case: DO-203AA, DO-4, Stud Mounting Type: Chassis, Stud Mount Speed: Fast Recovery =< 500ns, > 200mA (Io) Reverse Recovery Time (trr): 90 ns Technology: Standard Current - Average Rectified (Io): 25A Supplier Device Package: DO-4 Operating Temperature - Junction: -55°C ~ 150°C Voltage - DC Reverse (Vr) (Max): 600 V Voltage - Forward (Vf) (Max) @ If: 1.7 V @ 25 A Current - Reverse Leakage @ Vr: 10 µA @ 50 V |
товару немає в наявності |
В кошику од. на суму грн. | |||||||||||
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MUR2560 | GeneSiC Semiconductor |
Rectifiers 600V 25A Super Fast Recovery |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||||
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MUR2560R | GeneSiC Semiconductor |
Rectifiers 600V 25A REV Leads Super Fast Recovery |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||||
| MUR2560R | GeneSiC Semiconductor |
Description: DIODE GEN PURP REV 600V 25A DO4Packaging: Bulk Package / Case: DO-203AA, DO-4, Stud Mounting Type: Chassis, Stud Mount Speed: Fast Recovery =< 500ns, > 200mA (Io) Reverse Recovery Time (trr): 90 ns Technology: Standard, Reverse Polarity Current - Average Rectified (Io): 25A Supplier Device Package: DO-4 Operating Temperature - Junction: -55°C ~ 150°C Voltage - DC Reverse (Vr) (Max): 600 V Voltage - Forward (Vf) (Max) @ If: 1.7 V @ 25 A Current - Reverse Leakage @ Vr: 10 µA @ 50 V |
товару немає в наявності |
В кошику од. на суму грн. | |||||||||||
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MUR2X030A02 | GeneSiC Semiconductor |
Description: DIODE MODULE GP 200V 30A SOT-227Packaging: Bulk Package / Case: SOT-227-4, miniBLOC Mounting Type: Chassis Mount Speed: Fast Recovery =< 500ns, > 200mA (Io) Reverse Recovery Time (trr): 60 ns Technology: Standard Diode Configuration: 2 Independent Current - Average Rectified (Io) (per Diode): 30A Supplier Device Package: SOT-227 Operating Temperature - Junction: -55°C ~ 175°C Part Status: Active Voltage - DC Reverse (Vr) (Max): 200 V Voltage - Forward (Vf) (Max) @ If: 1 V @ 30 A Current - Reverse Leakage @ Vr: 25 µA @ 200 V |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||||
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MUR2X030A02 | GeneSiC Semiconductor |
Diode Modules 200V 60A Fwd Super Fast Recovery |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||||
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MUR2X030A04 | GeneSiC Semiconductor |
Diode Modules 400V 60A Fwd Super Fast Recovery |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||||
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MUR2X030A04 | GeneSiC Semiconductor |
Description: DIODE MODULE GP 400V 30A SOT227Packaging: Bulk Package / Case: SOT-227-4, miniBLOC Mounting Type: Chassis Mount Speed: Standard Recovery >500ns, > 200mA (Io) Technology: Standard Diode Configuration: 2 Independent Current - Average Rectified (Io) (per Diode): 30A Supplier Device Package: SOT-227 Operating Temperature - Junction: -55°C ~ 175°C Voltage - DC Reverse (Vr) (Max): 400 V Voltage - Forward (Vf) (Max) @ If: 1.3 V @ 30 A Current - Reverse Leakage @ Vr: 25 µA @ 400 V |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||||
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MUR2X030A06 | GeneSiC Semiconductor |
Rectifiers 600V 60A Fwd Super Fast Recovery |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||||
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MUR2X030A06 | GeneSiC Semiconductor |
Description: DIODE MODULE GP 600V 30A SOT-227Packaging: Bulk Package / Case: SOT-227-4, miniBLOC Mounting Type: Chassis Mount Speed: Fast Recovery =< 500ns, > 200mA (Io) Reverse Recovery Time (trr): 60 ns Technology: Standard Diode Configuration: 2 Independent Current - Average Rectified (Io) (per Diode): 30A Supplier Device Package: SOT-227 Operating Temperature - Junction: -55°C ~ 175°C Part Status: Obsolete Voltage - DC Reverse (Vr) (Max): 600 V Voltage - Forward (Vf) (Max) @ If: 1.5 V @ 30 A Current - Reverse Leakage @ Vr: 25 µA @ 600 V |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||||
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MUR2X030A10 | GeneSiC Semiconductor |
Rectifiers 1000V 60A Fwd Super Fast Recovery |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||||
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MUR2X030A12 | GeneSiC Semiconductor |
Rectifiers 1200V 60A Fwd Super Fast Recovery |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||||
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MUR2X030A12 | GeneSiC Semiconductor |
Description: DIODE MODULE GP 1200V 30A SOT227Packaging: Bulk Package / Case: SOT-227-4, miniBLOC Mounting Type: Chassis Mount Speed: Fast Recovery =< 500ns, > 200mA (Io) Reverse Recovery Time (trr): 85 ns Technology: Standard Diode Configuration: 2 Independent Current - Average Rectified (Io) (per Diode): 30A Supplier Device Package: SOT-227 Operating Temperature - Junction: -65°C ~ 175°C Part Status: Obsolete Voltage - DC Reverse (Vr) (Max): 1200 V Voltage - Forward (Vf) (Max) @ If: 2.35 V @ 30 A Current - Reverse Leakage @ Vr: 25 µA @ 1200 V |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||||
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MUR2X060A02 | GeneSiC Semiconductor |
Diode Modules 200V 120A Fwd Super Fast Recovery |
на замовлення 118 шт: термін постачання 21-30 дні (днів) |
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MUR2X060A04 | GeneSiC Semiconductor |
Description: DIODE MODULE GP 400V 60A SOT227Packaging: Bulk Package / Case: SOT-227-4, miniBLOC Mounting Type: Chassis Mount Speed: Fast Recovery =< 500ns, > 200mA (Io) Reverse Recovery Time (trr): 75 ns Technology: Standard Diode Configuration: 2 Independent Current - Average Rectified (Io) (per Diode): 60A Supplier Device Package: SOT-227 Operating Temperature - Junction: -55°C ~ 175°C Part Status: Active Voltage - DC Reverse (Vr) (Max): 400 V Voltage - Forward (Vf) (Max) @ If: 1.3 V @ 60 A Current - Reverse Leakage @ Vr: 25 µA @ 400 V |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||||
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MUR2X060A04 | GeneSiC Semiconductor |
Discrete Semiconductor Modules 400V 120A Fwd Super Fast Recovery |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||||
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MUR2X060A06 | GeneSiC Semiconductor |
Description: DIODE MODULE GP 600V 60A SOT-227Packaging: Bulk Package / Case: SOT-227-4, miniBLOC Mounting Type: Chassis Mount Speed: Fast Recovery =< 500ns, > 200mA (Io) Reverse Recovery Time (trr): 90 ns Technology: Standard Diode Configuration: 2 Independent Current - Average Rectified (Io) (per Diode): 60A Supplier Device Package: SOT-227 Operating Temperature - Junction: -55°C ~ 175°C Part Status: Active Voltage - DC Reverse (Vr) (Max): 600 V Voltage - Forward (Vf) (Max) @ If: 1.5 V @ 60 A Current - Reverse Leakage @ Vr: 25 µA @ 600 V |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||||
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MUR2X060A06 | GeneSiC Semiconductor |
Diode Modules 600V 120A Fwd Super Fast Recovery |
на замовлення 143 шт: термін постачання 21-30 дні (днів) |
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MUR2X060A10 | GeneSiC Semiconductor |
Description: DIODE GEN PURP 1KV 60A SOT227 |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||||
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MUR2X060A10 | GeneSiC Semiconductor |
Discrete Semiconductor Modules 1000V 120A Fwd Super Fast Recovery |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||||
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MUR2X060A12 | GeneSiC Semiconductor |
Discrete Semiconductor Modules 1200V 120A Fwd Super Fast Recovery |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||||
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MUR2X060A12 | GeneSiC Semiconductor |
Description: DIODE GEN PURP 1.2KV 60A SOT227 |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||||
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MUR2X100A02 | GeneSiC Semiconductor |
Diode Modules 200V 200A Fwd Super Fast Recovery |
на замовлення 82 шт: термін постачання 21-30 дні (днів) |
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MUR2X100A02 | GeneSiC Semiconductor |
Description: DIODE MODULE GP 200V 100A SOT227Packaging: Bulk Package / Case: SOT-227-4, miniBLOC Mounting Type: Chassis Mount Speed: Fast Recovery =< 500ns, > 200mA (Io) Reverse Recovery Time (trr): 75 ns Technology: Standard Diode Configuration: 2 Independent Current - Average Rectified (Io) (per Diode): 100A Supplier Device Package: SOT-227 Operating Temperature - Junction: -55°C ~ 175°C Part Status: Active Voltage - DC Reverse (Vr) (Max): 200 V Voltage - Forward (Vf) (Max) @ If: 1 V @ 100 A Current - Reverse Leakage @ Vr: 25 µA @ 200 V |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||||
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MUR2X100A04 | GeneSiC Semiconductor |
Discrete Semiconductor Modules 400V 200A Fwd Super Fast Recovery |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||||
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MUR2X100A04 | GeneSiC Semiconductor |
Description: DIODE MODULE GP 400V 100A SOT227Packaging: Bulk Package / Case: SOT-227-4, miniBLOC Mounting Type: Chassis Mount Speed: Fast Recovery =< 500ns, > 200mA (Io) Reverse Recovery Time (trr): 90 ns Technology: Standard Diode Configuration: 2 Independent Current - Average Rectified (Io) (per Diode): 100A Supplier Device Package: SOT-227 Operating Temperature - Junction: -55°C ~ 175°C Part Status: Active Voltage - DC Reverse (Vr) (Max): 400 V Voltage - Forward (Vf) (Max) @ If: 1.3 V @ 100 A Current - Reverse Leakage @ Vr: 25 µA @ 400 V |
на замовлення 12 шт: термін постачання 21-31 дні (днів) |
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MUR2X100A06 | GeneSiC Semiconductor |
Description: DIODE GEN PURP 600V 100A SOT227 |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||||
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MUR2X100A06 | GeneSiC Semiconductor |
Discrete Semiconductor Modules 600V 200A Fwd Super Fast Recovery |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||||
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MUR2X100A10 | GeneSiC Semiconductor |
Description: DIODE GEN PURP 1KV 100A SOT227 |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||||
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MUR2X100A10 | GeneSiC Semiconductor |
Discrete Semiconductor Modules 1000V 200A Fwd Super Fast Recovery |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||||
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MUR2X100A12 | GeneSiC Semiconductor |
Discrete Semiconductor Modules 1200V 200A Fwd Super Fast Recovery |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||||
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MUR2X100A12 | GeneSiC Semiconductor |
Description: DIODE GEN PURP 1.2KV 100A SOT227 |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||||
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MUR2X120A02 | GeneSiC Semiconductor |
Discrete Semiconductor Modules 200V 240A Fwd Super Fast Recovery |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||||
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MUR2X120A02 | GeneSiC Semiconductor |
Description: DIODE GEN PURP 200V 120A SOT227Packaging: Bulk Package / Case: SOT-227-4, miniBLOC Mounting Type: Chassis Mount Speed: Standard Recovery >500ns, > 200mA (Io) Technology: Standard Diode Configuration: 2 Independent Current - Average Rectified (Io) (per Diode): 120A Supplier Device Package: SOT-227 Operating Temperature - Junction: -55°C ~ 175°C Part Status: Active Voltage - DC Reverse (Vr) (Max): 200 V Voltage - Forward (Vf) (Max) @ If: 1 V @ 120 A Current - Reverse Leakage @ Vr: 25 µA @ 200 V |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||||
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MUR2X120A04 | GeneSiC Semiconductor |
Description: DIODE GEN PURP 400V 120A SOT227 |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||||
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MUR2X120A04 | GeneSiC Semiconductor |
Discrete Semiconductor Modules 400V 240A Fwd Super Fast Recovery |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||||
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MUR2X120A06 | GeneSiC Semiconductor |
Description: DIODE GEN PURP 600V 120A SOT227Packaging: Bulk Package / Case: SOT-227-4, miniBLOC Mounting Type: Chassis Mount Speed: Standard Recovery >500ns, > 200mA (Io) Technology: Standard Diode Configuration: 2 Independent Current - Average Rectified (Io) (per Diode): 120A Supplier Device Package: SOT-227 Operating Temperature - Junction: -55°C ~ 175°C Part Status: Active Voltage - DC Reverse (Vr) (Max): 600 V Voltage - Forward (Vf) (Max) @ If: 1.3 V @ 120 A Current - Reverse Leakage @ Vr: 25 µA @ 600 V |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||||
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MUR2X120A06 | GeneSiC Semiconductor |
Discrete Semiconductor Modules 600V 240A Fwd Super Fast Recovery |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||||
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MUR2X120A10 | GeneSiC Semiconductor |
Description: DIODE MOD GP 1000V 120A SOT-227Packaging: Bulk Package / Case: SOT-227-4, miniBLOC Mounting Type: Chassis Mount Speed: Standard Recovery >500ns, > 200mA (Io) Technology: Standard Diode Configuration: 2 Independent Current - Average Rectified (Io) (per Diode): 120A Supplier Device Package: SOT-227 Operating Temperature - Junction: -55°C ~ 175°C Part Status: Active Voltage - DC Reverse (Vr) (Max): 1000 V Voltage - Forward (Vf) (Max) @ If: 2.35 V @ 120 A Current - Reverse Leakage @ Vr: 25 µA @ 1000 V |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||||
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MUR2X120A10 | GeneSiC Semiconductor |
Discrete Semiconductor Modules 1000V 240A Fwd Super Fast Recovery |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||||
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MUR2X120A12 | GeneSiC Semiconductor |
Description: DIODE GEN PURP 1.2KV 120A SOT227 |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||||
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MUR2X120A12 | GeneSiC Semiconductor |
Discrete Semiconductor Modules 1200V 240A Fwd Super Fast Recovery |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||||
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MUR30005CT | GeneSiC Semiconductor |
Rectifiers 50V 300A Super Fast Recovery |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||||
| MUR30005CT | GeneSiC Semiconductor |
Description: DIODE MODULE GP 50V 150A 2TOWERPackaging: Bulk Package / Case: Twin Tower Mounting Type: Chassis Mount Speed: Fast Recovery =< 500ns, > 200mA (Io) Reverse Recovery Time (trr): 90 ns Technology: Standard Diode Configuration: 1 Pair Common Cathode Current - Average Rectified (Io) (per Diode): 150A Supplier Device Package: Twin Tower Operating Temperature - Junction: -55°C ~ 150°C Voltage - DC Reverse (Vr) (Max): 50 V Voltage - Forward (Vf) (Max) @ If: 1.3 V @ 100 A Current - Reverse Leakage @ Vr: 25 µA @ 50 V |
товару немає в наявності |
В кошику од. на суму грн. | |||||||||||
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MUR30005CTR | GeneSiC Semiconductor |
Rectifiers 50V 300A Super Fast Recovery |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||||
| MUR30005CTR | GeneSiC Semiconductor |
Description: DIODE MODULE GP 50V 150A 2TOWERPackaging: Bulk Package / Case: Twin Tower Mounting Type: Chassis Mount Speed: Fast Recovery =< 500ns, > 200mA (Io) Reverse Recovery Time (trr): 90 ns Technology: Standard Diode Configuration: 1 Pair Common Anode Current - Average Rectified (Io) (per Diode): 150A Supplier Device Package: Twin Tower Operating Temperature - Junction: -55°C ~ 150°C Voltage - DC Reverse (Vr) (Max): 50 V Voltage - Forward (Vf) (Max) @ If: 1.3 V @ 100 A Current - Reverse Leakage @ Vr: 25 µA @ 50 V |
товару немає в наявності |
В кошику од. на суму грн. | |||||||||||
| MUR30010CT | GeneSiC Semiconductor |
Description: DIODE MODULE GP 100V 150A 2TOWERPackaging: Bulk Package / Case: Twin Tower Mounting Type: Chassis Mount Speed: Fast Recovery =< 500ns, > 200mA (Io) Reverse Recovery Time (trr): 90 ns Technology: Standard Diode Configuration: 1 Pair Common Cathode Current - Average Rectified (Io) (per Diode): 150A Supplier Device Package: Twin Tower Operating Temperature - Junction: -55°C ~ 150°C Voltage - DC Reverse (Vr) (Max): 100 V Voltage - Forward (Vf) (Max) @ If: 1.3 V @ 100 A Current - Reverse Leakage @ Vr: 25 µA @ 50 V |
товару немає в наявності |
В кошику од. на суму грн. | |||||||||||
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MUR30010CT | GeneSiC Semiconductor |
Diode Modules 100V 300A Super Fast Recovery |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||||
| MUR30010CTR | GeneSiC Semiconductor |
Description: DIODE MODULE GP 100V 150A 2TOWERPackaging: Bulk Package / Case: Twin Tower Mounting Type: Chassis Mount Speed: Fast Recovery =< 500ns, > 200mA (Io) Reverse Recovery Time (trr): 90 ns Technology: Standard Diode Configuration: 1 Pair Common Anode Current - Average Rectified (Io) (per Diode): 150A Supplier Device Package: Twin Tower Operating Temperature - Junction: -55°C ~ 150°C Voltage - DC Reverse (Vr) (Max): 100 V Voltage - Forward (Vf) (Max) @ If: 1.3 V @ 100 A Current - Reverse Leakage @ Vr: 25 µA @ 50 V |
товару немає в наявності |
В кошику од. на суму грн. | |||||||||||
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MUR30010CTR | GeneSiC Semiconductor |
Diode Modules 100V 300A Super Fast Recovery |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||||
| MUR30020CT | GeneSiC Semiconductor |
Description: DIODE MODULE GP 200V 150A 2TOWERPackaging: Bulk Package / Case: Twin Tower Mounting Type: Chassis Mount Speed: Fast Recovery =< 500ns, > 200mA (Io) Reverse Recovery Time (trr): 90 ns Technology: Standard Diode Configuration: 1 Pair Common Cathode Current - Average Rectified (Io) (per Diode): 150A Supplier Device Package: Twin Tower Operating Temperature - Junction: -55°C ~ 150°C Voltage - DC Reverse (Vr) (Max): 200 V Voltage - Forward (Vf) (Max) @ If: 1.3 V @ 100 A Current - Reverse Leakage @ Vr: 25 µA @ 50 V |
товару немає в наявності |
В кошику од. на суму грн. | |||||||||||
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MUR30020CT | GeneSiC Semiconductor |
Diode Modules SI S-FST RECOV 2TWR 50-600V300A200P/141R |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||||
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MUR30020CTR | GeneSiC Semiconductor |
Diode Modules SI S-FST RECOV 2TWR 50-600V300A200P/141R |
товару немає в наявності |
В кошику од. на суму грн. |
| MUR2520 |
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Виробник: GeneSiC Semiconductor
Rectifiers 200V 25A Super Fast Recovery
Rectifiers 200V 25A Super Fast Recovery
товару немає в наявності
В кошику
од. на суму грн.
| MUR2520R |
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Виробник: GeneSiC Semiconductor
Rectifiers 200V 25A REV Leads Super Fast Recovery
Rectifiers 200V 25A REV Leads Super Fast Recovery
на замовлення 135 шт:
термін постачання 21-30 дні (днів)| Кількість | Ціна |
|---|---|
| 1+ | 916.33 грн |
| 10+ | 752.43 грн |
| 25+ | 608.50 грн |
| 100+ | 544.66 грн |
| 250+ | 526.62 грн |
| MUR2520R |
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Виробник: GeneSiC Semiconductor
Description: DIODE GEN PURP REV 200V 25A DO4
Packaging: Bulk
Package / Case: DO-203AA, DO-4, Stud
Mounting Type: Chassis, Stud Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 75 ns
Technology: Standard, Reverse Polarity
Current - Average Rectified (Io): 25A
Supplier Device Package: DO-4
Operating Temperature - Junction: -55°C ~ 150°C
Voltage - DC Reverse (Vr) (Max): 200 V
Voltage - Forward (Vf) (Max) @ If: 1 V @ 25 A
Current - Reverse Leakage @ Vr: 10 µA @ 50 V
Description: DIODE GEN PURP REV 200V 25A DO4
Packaging: Bulk
Package / Case: DO-203AA, DO-4, Stud
Mounting Type: Chassis, Stud Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 75 ns
Technology: Standard, Reverse Polarity
Current - Average Rectified (Io): 25A
Supplier Device Package: DO-4
Operating Temperature - Junction: -55°C ~ 150°C
Voltage - DC Reverse (Vr) (Max): 200 V
Voltage - Forward (Vf) (Max) @ If: 1 V @ 25 A
Current - Reverse Leakage @ Vr: 10 µA @ 50 V
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В кошику
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| MUR2540 |
![]() |
Виробник: GeneSiC Semiconductor
Rectifiers 400V 25A Super Fast Recovery
Rectifiers 400V 25A Super Fast Recovery
товару немає в наявності
В кошику
од. на суму грн.
| MUR2540 |
![]() |
Виробник: GeneSiC Semiconductor
Description: DIODE GEN PURP 400V 25A DO4
Packaging: Bulk
Package / Case: DO-203AA, DO-4, Stud
Mounting Type: Chassis, Stud Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 75 ns
Technology: Standard
Current - Average Rectified (Io): 25A
Supplier Device Package: DO-4
Operating Temperature - Junction: -55°C ~ 150°C
Voltage - DC Reverse (Vr) (Max): 400 V
Voltage - Forward (Vf) (Max) @ If: 1.3 V @ 25 A
Current - Reverse Leakage @ Vr: 10 µA @ 50 V
Description: DIODE GEN PURP 400V 25A DO4
Packaging: Bulk
Package / Case: DO-203AA, DO-4, Stud
Mounting Type: Chassis, Stud Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 75 ns
Technology: Standard
Current - Average Rectified (Io): 25A
Supplier Device Package: DO-4
Operating Temperature - Junction: -55°C ~ 150°C
Voltage - DC Reverse (Vr) (Max): 400 V
Voltage - Forward (Vf) (Max) @ If: 1.3 V @ 25 A
Current - Reverse Leakage @ Vr: 10 µA @ 50 V
товару немає в наявності
В кошику
од. на суму грн.
| MUR2540R |
![]() |
Виробник: GeneSiC Semiconductor
Description: DIODE GEN PURP REV 400V 25A DO4
Packaging: Bulk
Package / Case: DO-203AA, DO-4, Stud
Mounting Type: Chassis, Stud Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 75 ns
Technology: Standard, Reverse Polarity
Current - Average Rectified (Io): 25A
Supplier Device Package: DO-4
Operating Temperature - Junction: -55°C ~ 150°C
Voltage - DC Reverse (Vr) (Max): 400 V
Voltage - Forward (Vf) (Max) @ If: 1.3 V @ 25 A
Current - Reverse Leakage @ Vr: 10 µA @ 50 V
Description: DIODE GEN PURP REV 400V 25A DO4
Packaging: Bulk
Package / Case: DO-203AA, DO-4, Stud
Mounting Type: Chassis, Stud Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 75 ns
Technology: Standard, Reverse Polarity
Current - Average Rectified (Io): 25A
Supplier Device Package: DO-4
Operating Temperature - Junction: -55°C ~ 150°C
Voltage - DC Reverse (Vr) (Max): 400 V
Voltage - Forward (Vf) (Max) @ If: 1.3 V @ 25 A
Current - Reverse Leakage @ Vr: 10 µA @ 50 V
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В кошику
од. на суму грн.
| MUR2540R |
![]() |
Виробник: GeneSiC Semiconductor
Rectifiers 400V 25A REV Leads Super Fast Recovery
Rectifiers 400V 25A REV Leads Super Fast Recovery
товару немає в наявності
В кошику
од. на суму грн.
| MUR2560 |
![]() |
Виробник: GeneSiC Semiconductor
Description: DIODE GEN PURP 600V 25A DO4
Packaging: Bulk
Package / Case: DO-203AA, DO-4, Stud
Mounting Type: Chassis, Stud Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 90 ns
Technology: Standard
Current - Average Rectified (Io): 25A
Supplier Device Package: DO-4
Operating Temperature - Junction: -55°C ~ 150°C
Voltage - DC Reverse (Vr) (Max): 600 V
Voltage - Forward (Vf) (Max) @ If: 1.7 V @ 25 A
Current - Reverse Leakage @ Vr: 10 µA @ 50 V
Description: DIODE GEN PURP 600V 25A DO4
Packaging: Bulk
Package / Case: DO-203AA, DO-4, Stud
Mounting Type: Chassis, Stud Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 90 ns
Technology: Standard
Current - Average Rectified (Io): 25A
Supplier Device Package: DO-4
Operating Temperature - Junction: -55°C ~ 150°C
Voltage - DC Reverse (Vr) (Max): 600 V
Voltage - Forward (Vf) (Max) @ If: 1.7 V @ 25 A
Current - Reverse Leakage @ Vr: 10 µA @ 50 V
товару немає в наявності
В кошику
од. на суму грн.
| MUR2560 |
![]() |
Виробник: GeneSiC Semiconductor
Rectifiers 600V 25A Super Fast Recovery
Rectifiers 600V 25A Super Fast Recovery
товару немає в наявності
В кошику
од. на суму грн.
| MUR2560R |
![]() |
Виробник: GeneSiC Semiconductor
Rectifiers 600V 25A REV Leads Super Fast Recovery
Rectifiers 600V 25A REV Leads Super Fast Recovery
товару немає в наявності
В кошику
од. на суму грн.
| MUR2560R |
![]() |
Виробник: GeneSiC Semiconductor
Description: DIODE GEN PURP REV 600V 25A DO4
Packaging: Bulk
Package / Case: DO-203AA, DO-4, Stud
Mounting Type: Chassis, Stud Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 90 ns
Technology: Standard, Reverse Polarity
Current - Average Rectified (Io): 25A
Supplier Device Package: DO-4
Operating Temperature - Junction: -55°C ~ 150°C
Voltage - DC Reverse (Vr) (Max): 600 V
Voltage - Forward (Vf) (Max) @ If: 1.7 V @ 25 A
Current - Reverse Leakage @ Vr: 10 µA @ 50 V
Description: DIODE GEN PURP REV 600V 25A DO4
Packaging: Bulk
Package / Case: DO-203AA, DO-4, Stud
Mounting Type: Chassis, Stud Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 90 ns
Technology: Standard, Reverse Polarity
Current - Average Rectified (Io): 25A
Supplier Device Package: DO-4
Operating Temperature - Junction: -55°C ~ 150°C
Voltage - DC Reverse (Vr) (Max): 600 V
Voltage - Forward (Vf) (Max) @ If: 1.7 V @ 25 A
Current - Reverse Leakage @ Vr: 10 µA @ 50 V
товару немає в наявності
В кошику
од. на суму грн.
| MUR2X030A02 |
![]() |
Виробник: GeneSiC Semiconductor
Description: DIODE MODULE GP 200V 30A SOT-227
Packaging: Bulk
Package / Case: SOT-227-4, miniBLOC
Mounting Type: Chassis Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 60 ns
Technology: Standard
Diode Configuration: 2 Independent
Current - Average Rectified (Io) (per Diode): 30A
Supplier Device Package: SOT-227
Operating Temperature - Junction: -55°C ~ 175°C
Part Status: Active
Voltage - DC Reverse (Vr) (Max): 200 V
Voltage - Forward (Vf) (Max) @ If: 1 V @ 30 A
Current - Reverse Leakage @ Vr: 25 µA @ 200 V
Description: DIODE MODULE GP 200V 30A SOT-227
Packaging: Bulk
Package / Case: SOT-227-4, miniBLOC
Mounting Type: Chassis Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 60 ns
Technology: Standard
Diode Configuration: 2 Independent
Current - Average Rectified (Io) (per Diode): 30A
Supplier Device Package: SOT-227
Operating Temperature - Junction: -55°C ~ 175°C
Part Status: Active
Voltage - DC Reverse (Vr) (Max): 200 V
Voltage - Forward (Vf) (Max) @ If: 1 V @ 30 A
Current - Reverse Leakage @ Vr: 25 µA @ 200 V
товару немає в наявності
В кошику
од. на суму грн.
| MUR2X030A02 |
![]() |
Виробник: GeneSiC Semiconductor
Diode Modules 200V 60A Fwd Super Fast Recovery
Diode Modules 200V 60A Fwd Super Fast Recovery
товару немає в наявності
В кошику
од. на суму грн.
| MUR2X030A04 |
![]() |
Виробник: GeneSiC Semiconductor
Diode Modules 400V 60A Fwd Super Fast Recovery
Diode Modules 400V 60A Fwd Super Fast Recovery
товару немає в наявності
В кошику
од. на суму грн.
| MUR2X030A04 |
![]() |
Виробник: GeneSiC Semiconductor
Description: DIODE MODULE GP 400V 30A SOT227
Packaging: Bulk
Package / Case: SOT-227-4, miniBLOC
Mounting Type: Chassis Mount
Speed: Standard Recovery >500ns, > 200mA (Io)
Technology: Standard
Diode Configuration: 2 Independent
Current - Average Rectified (Io) (per Diode): 30A
Supplier Device Package: SOT-227
Operating Temperature - Junction: -55°C ~ 175°C
Voltage - DC Reverse (Vr) (Max): 400 V
Voltage - Forward (Vf) (Max) @ If: 1.3 V @ 30 A
Current - Reverse Leakage @ Vr: 25 µA @ 400 V
Description: DIODE MODULE GP 400V 30A SOT227
Packaging: Bulk
Package / Case: SOT-227-4, miniBLOC
Mounting Type: Chassis Mount
Speed: Standard Recovery >500ns, > 200mA (Io)
Technology: Standard
Diode Configuration: 2 Independent
Current - Average Rectified (Io) (per Diode): 30A
Supplier Device Package: SOT-227
Operating Temperature - Junction: -55°C ~ 175°C
Voltage - DC Reverse (Vr) (Max): 400 V
Voltage - Forward (Vf) (Max) @ If: 1.3 V @ 30 A
Current - Reverse Leakage @ Vr: 25 µA @ 400 V
товару немає в наявності
В кошику
од. на суму грн.
| MUR2X030A06 |
![]() |
Виробник: GeneSiC Semiconductor
Rectifiers 600V 60A Fwd Super Fast Recovery
Rectifiers 600V 60A Fwd Super Fast Recovery
товару немає в наявності
В кошику
од. на суму грн.
| MUR2X030A06 |
![]() |
Виробник: GeneSiC Semiconductor
Description: DIODE MODULE GP 600V 30A SOT-227
Packaging: Bulk
Package / Case: SOT-227-4, miniBLOC
Mounting Type: Chassis Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 60 ns
Technology: Standard
Diode Configuration: 2 Independent
Current - Average Rectified (Io) (per Diode): 30A
Supplier Device Package: SOT-227
Operating Temperature - Junction: -55°C ~ 175°C
Part Status: Obsolete
Voltage - DC Reverse (Vr) (Max): 600 V
Voltage - Forward (Vf) (Max) @ If: 1.5 V @ 30 A
Current - Reverse Leakage @ Vr: 25 µA @ 600 V
Description: DIODE MODULE GP 600V 30A SOT-227
Packaging: Bulk
Package / Case: SOT-227-4, miniBLOC
Mounting Type: Chassis Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 60 ns
Technology: Standard
Diode Configuration: 2 Independent
Current - Average Rectified (Io) (per Diode): 30A
Supplier Device Package: SOT-227
Operating Temperature - Junction: -55°C ~ 175°C
Part Status: Obsolete
Voltage - DC Reverse (Vr) (Max): 600 V
Voltage - Forward (Vf) (Max) @ If: 1.5 V @ 30 A
Current - Reverse Leakage @ Vr: 25 µA @ 600 V
товару немає в наявності
В кошику
од. на суму грн.
| MUR2X030A10 |
![]() |
Виробник: GeneSiC Semiconductor
Rectifiers 1000V 60A Fwd Super Fast Recovery
Rectifiers 1000V 60A Fwd Super Fast Recovery
товару немає в наявності
В кошику
од. на суму грн.
| MUR2X030A12 |
![]() |
Виробник: GeneSiC Semiconductor
Rectifiers 1200V 60A Fwd Super Fast Recovery
Rectifiers 1200V 60A Fwd Super Fast Recovery
товару немає в наявності
В кошику
од. на суму грн.
| MUR2X030A12 |
![]() |
Виробник: GeneSiC Semiconductor
Description: DIODE MODULE GP 1200V 30A SOT227
Packaging: Bulk
Package / Case: SOT-227-4, miniBLOC
Mounting Type: Chassis Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 85 ns
Technology: Standard
Diode Configuration: 2 Independent
Current - Average Rectified (Io) (per Diode): 30A
Supplier Device Package: SOT-227
Operating Temperature - Junction: -65°C ~ 175°C
Part Status: Obsolete
Voltage - DC Reverse (Vr) (Max): 1200 V
Voltage - Forward (Vf) (Max) @ If: 2.35 V @ 30 A
Current - Reverse Leakage @ Vr: 25 µA @ 1200 V
Description: DIODE MODULE GP 1200V 30A SOT227
Packaging: Bulk
Package / Case: SOT-227-4, miniBLOC
Mounting Type: Chassis Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 85 ns
Technology: Standard
Diode Configuration: 2 Independent
Current - Average Rectified (Io) (per Diode): 30A
Supplier Device Package: SOT-227
Operating Temperature - Junction: -65°C ~ 175°C
Part Status: Obsolete
Voltage - DC Reverse (Vr) (Max): 1200 V
Voltage - Forward (Vf) (Max) @ If: 2.35 V @ 30 A
Current - Reverse Leakage @ Vr: 25 µA @ 1200 V
товару немає в наявності
В кошику
од. на суму грн.
| MUR2X060A02 |
![]() |
Виробник: GeneSiC Semiconductor
Diode Modules 200V 120A Fwd Super Fast Recovery
Diode Modules 200V 120A Fwd Super Fast Recovery
на замовлення 118 шт:
термін постачання 21-30 дні (днів)| Кількість | Ціна |
|---|---|
| 1+ | 3280.81 грн |
| 10+ | 2791.10 грн |
| 25+ | 2258.44 грн |
| 104+ | 2254.28 грн |
| 260+ | 2170.32 грн |
| MUR2X060A04 |
![]() |
Виробник: GeneSiC Semiconductor
Description: DIODE MODULE GP 400V 60A SOT227
Packaging: Bulk
Package / Case: SOT-227-4, miniBLOC
Mounting Type: Chassis Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 75 ns
Technology: Standard
Diode Configuration: 2 Independent
Current - Average Rectified (Io) (per Diode): 60A
Supplier Device Package: SOT-227
Operating Temperature - Junction: -55°C ~ 175°C
Part Status: Active
Voltage - DC Reverse (Vr) (Max): 400 V
Voltage - Forward (Vf) (Max) @ If: 1.3 V @ 60 A
Current - Reverse Leakage @ Vr: 25 µA @ 400 V
Description: DIODE MODULE GP 400V 60A SOT227
Packaging: Bulk
Package / Case: SOT-227-4, miniBLOC
Mounting Type: Chassis Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 75 ns
Technology: Standard
Diode Configuration: 2 Independent
Current - Average Rectified (Io) (per Diode): 60A
Supplier Device Package: SOT-227
Operating Temperature - Junction: -55°C ~ 175°C
Part Status: Active
Voltage - DC Reverse (Vr) (Max): 400 V
Voltage - Forward (Vf) (Max) @ If: 1.3 V @ 60 A
Current - Reverse Leakage @ Vr: 25 µA @ 400 V
товару немає в наявності
В кошику
од. на суму грн.
| MUR2X060A04 |
![]() |
Виробник: GeneSiC Semiconductor
Discrete Semiconductor Modules 400V 120A Fwd Super Fast Recovery
Discrete Semiconductor Modules 400V 120A Fwd Super Fast Recovery
товару немає в наявності
В кошику
од. на суму грн.
| MUR2X060A06 |
![]() |
Виробник: GeneSiC Semiconductor
Description: DIODE MODULE GP 600V 60A SOT-227
Packaging: Bulk
Package / Case: SOT-227-4, miniBLOC
Mounting Type: Chassis Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 90 ns
Technology: Standard
Diode Configuration: 2 Independent
Current - Average Rectified (Io) (per Diode): 60A
Supplier Device Package: SOT-227
Operating Temperature - Junction: -55°C ~ 175°C
Part Status: Active
Voltage - DC Reverse (Vr) (Max): 600 V
Voltage - Forward (Vf) (Max) @ If: 1.5 V @ 60 A
Current - Reverse Leakage @ Vr: 25 µA @ 600 V
Description: DIODE MODULE GP 600V 60A SOT-227
Packaging: Bulk
Package / Case: SOT-227-4, miniBLOC
Mounting Type: Chassis Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 90 ns
Technology: Standard
Diode Configuration: 2 Independent
Current - Average Rectified (Io) (per Diode): 60A
Supplier Device Package: SOT-227
Operating Temperature - Junction: -55°C ~ 175°C
Part Status: Active
Voltage - DC Reverse (Vr) (Max): 600 V
Voltage - Forward (Vf) (Max) @ If: 1.5 V @ 60 A
Current - Reverse Leakage @ Vr: 25 µA @ 600 V
товару немає в наявності
В кошику
од. на суму грн.
| MUR2X060A06 |
![]() |
Виробник: GeneSiC Semiconductor
Diode Modules 600V 120A Fwd Super Fast Recovery
Diode Modules 600V 120A Fwd Super Fast Recovery
на замовлення 143 шт:
термін постачання 21-30 дні (днів)| Кількість | Ціна |
|---|---|
| 1+ | 3547.13 грн |
| 10+ | 3012.92 грн |
| 25+ | 2469.37 грн |
| 52+ | 2361.13 грн |
| 104+ | 2345.86 грн |
| MUR2X060A10 |
![]() |
Виробник: GeneSiC Semiconductor
Description: DIODE GEN PURP 1KV 60A SOT227
Description: DIODE GEN PURP 1KV 60A SOT227
товару немає в наявності
В кошику
од. на суму грн.
| MUR2X060A10 |
![]() |
Виробник: GeneSiC Semiconductor
Discrete Semiconductor Modules 1000V 120A Fwd Super Fast Recovery
Discrete Semiconductor Modules 1000V 120A Fwd Super Fast Recovery
товару немає в наявності
В кошику
од. на суму грн.
| MUR2X060A12 |
![]() |
Виробник: GeneSiC Semiconductor
Discrete Semiconductor Modules 1200V 120A Fwd Super Fast Recovery
Discrete Semiconductor Modules 1200V 120A Fwd Super Fast Recovery
товару немає в наявності
В кошику
од. на суму грн.
| MUR2X060A12 |
![]() |
Виробник: GeneSiC Semiconductor
Description: DIODE GEN PURP 1.2KV 60A SOT227
Description: DIODE GEN PURP 1.2KV 60A SOT227
товару немає в наявності
В кошику
од. на суму грн.
| MUR2X100A02 |
![]() |
Виробник: GeneSiC Semiconductor
Diode Modules 200V 200A Fwd Super Fast Recovery
Diode Modules 200V 200A Fwd Super Fast Recovery
на замовлення 82 шт:
термін постачання 21-30 дні (днів)| Кількість | Ціна |
|---|---|
| 1+ | 3634.55 грн |
| 10+ | 3103.88 грн |
| 25+ | 2429.82 грн |
| MUR2X100A02 |
![]() |
Виробник: GeneSiC Semiconductor
Description: DIODE MODULE GP 200V 100A SOT227
Packaging: Bulk
Package / Case: SOT-227-4, miniBLOC
Mounting Type: Chassis Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 75 ns
Technology: Standard
Diode Configuration: 2 Independent
Current - Average Rectified (Io) (per Diode): 100A
Supplier Device Package: SOT-227
Operating Temperature - Junction: -55°C ~ 175°C
Part Status: Active
Voltage - DC Reverse (Vr) (Max): 200 V
Voltage - Forward (Vf) (Max) @ If: 1 V @ 100 A
Current - Reverse Leakage @ Vr: 25 µA @ 200 V
Description: DIODE MODULE GP 200V 100A SOT227
Packaging: Bulk
Package / Case: SOT-227-4, miniBLOC
Mounting Type: Chassis Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 75 ns
Technology: Standard
Diode Configuration: 2 Independent
Current - Average Rectified (Io) (per Diode): 100A
Supplier Device Package: SOT-227
Operating Temperature - Junction: -55°C ~ 175°C
Part Status: Active
Voltage - DC Reverse (Vr) (Max): 200 V
Voltage - Forward (Vf) (Max) @ If: 1 V @ 100 A
Current - Reverse Leakage @ Vr: 25 µA @ 200 V
товару немає в наявності
В кошику
од. на суму грн.
| MUR2X100A04 |
![]() |
Виробник: GeneSiC Semiconductor
Discrete Semiconductor Modules 400V 200A Fwd Super Fast Recovery
Discrete Semiconductor Modules 400V 200A Fwd Super Fast Recovery
товару немає в наявності
В кошику
од. на суму грн.
| MUR2X100A04 |
![]() |
Виробник: GeneSiC Semiconductor
Description: DIODE MODULE GP 400V 100A SOT227
Packaging: Bulk
Package / Case: SOT-227-4, miniBLOC
Mounting Type: Chassis Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 90 ns
Technology: Standard
Diode Configuration: 2 Independent
Current - Average Rectified (Io) (per Diode): 100A
Supplier Device Package: SOT-227
Operating Temperature - Junction: -55°C ~ 175°C
Part Status: Active
Voltage - DC Reverse (Vr) (Max): 400 V
Voltage - Forward (Vf) (Max) @ If: 1.3 V @ 100 A
Current - Reverse Leakage @ Vr: 25 µA @ 400 V
Description: DIODE MODULE GP 400V 100A SOT227
Packaging: Bulk
Package / Case: SOT-227-4, miniBLOC
Mounting Type: Chassis Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 90 ns
Technology: Standard
Diode Configuration: 2 Independent
Current - Average Rectified (Io) (per Diode): 100A
Supplier Device Package: SOT-227
Operating Temperature - Junction: -55°C ~ 175°C
Part Status: Active
Voltage - DC Reverse (Vr) (Max): 400 V
Voltage - Forward (Vf) (Max) @ If: 1.3 V @ 100 A
Current - Reverse Leakage @ Vr: 25 µA @ 400 V
на замовлення 12 шт:
термін постачання 21-31 дні (днів)| Кількість | Ціна |
|---|---|
| 1+ | 3909.08 грн |
| 10+ | 3261.36 грн |
| MUR2X100A06 |
![]() |
Виробник: GeneSiC Semiconductor
Description: DIODE GEN PURP 600V 100A SOT227
Description: DIODE GEN PURP 600V 100A SOT227
товару немає в наявності
В кошику
од. на суму грн.
| MUR2X100A06 |
![]() |
Виробник: GeneSiC Semiconductor
Discrete Semiconductor Modules 600V 200A Fwd Super Fast Recovery
Discrete Semiconductor Modules 600V 200A Fwd Super Fast Recovery
товару немає в наявності
В кошику
од. на суму грн.
| MUR2X100A10 |
![]() |
Виробник: GeneSiC Semiconductor
Description: DIODE GEN PURP 1KV 100A SOT227
Description: DIODE GEN PURP 1KV 100A SOT227
товару немає в наявності
В кошику
од. на суму грн.
| MUR2X100A10 |
![]() |
Виробник: GeneSiC Semiconductor
Discrete Semiconductor Modules 1000V 200A Fwd Super Fast Recovery
Discrete Semiconductor Modules 1000V 200A Fwd Super Fast Recovery
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В кошику
од. на суму грн.
| MUR2X100A12 |
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Виробник: GeneSiC Semiconductor
Discrete Semiconductor Modules 1200V 200A Fwd Super Fast Recovery
Discrete Semiconductor Modules 1200V 200A Fwd Super Fast Recovery
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В кошику
од. на суму грн.
| MUR2X100A12 |
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Виробник: GeneSiC Semiconductor
Description: DIODE GEN PURP 1.2KV 100A SOT227
Description: DIODE GEN PURP 1.2KV 100A SOT227
товару немає в наявності
В кошику
од. на суму грн.
| MUR2X120A02 |
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Виробник: GeneSiC Semiconductor
Discrete Semiconductor Modules 200V 240A Fwd Super Fast Recovery
Discrete Semiconductor Modules 200V 240A Fwd Super Fast Recovery
товару немає в наявності
В кошику
од. на суму грн.
| MUR2X120A02 |
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Виробник: GeneSiC Semiconductor
Description: DIODE GEN PURP 200V 120A SOT227
Packaging: Bulk
Package / Case: SOT-227-4, miniBLOC
Mounting Type: Chassis Mount
Speed: Standard Recovery >500ns, > 200mA (Io)
Technology: Standard
Diode Configuration: 2 Independent
Current - Average Rectified (Io) (per Diode): 120A
Supplier Device Package: SOT-227
Operating Temperature - Junction: -55°C ~ 175°C
Part Status: Active
Voltage - DC Reverse (Vr) (Max): 200 V
Voltage - Forward (Vf) (Max) @ If: 1 V @ 120 A
Current - Reverse Leakage @ Vr: 25 µA @ 200 V
Description: DIODE GEN PURP 200V 120A SOT227
Packaging: Bulk
Package / Case: SOT-227-4, miniBLOC
Mounting Type: Chassis Mount
Speed: Standard Recovery >500ns, > 200mA (Io)
Technology: Standard
Diode Configuration: 2 Independent
Current - Average Rectified (Io) (per Diode): 120A
Supplier Device Package: SOT-227
Operating Temperature - Junction: -55°C ~ 175°C
Part Status: Active
Voltage - DC Reverse (Vr) (Max): 200 V
Voltage - Forward (Vf) (Max) @ If: 1 V @ 120 A
Current - Reverse Leakage @ Vr: 25 µA @ 200 V
товару немає в наявності
В кошику
од. на суму грн.
| MUR2X120A04 |
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Виробник: GeneSiC Semiconductor
Description: DIODE GEN PURP 400V 120A SOT227
Description: DIODE GEN PURP 400V 120A SOT227
товару немає в наявності
В кошику
од. на суму грн.
| MUR2X120A04 |
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Виробник: GeneSiC Semiconductor
Discrete Semiconductor Modules 400V 240A Fwd Super Fast Recovery
Discrete Semiconductor Modules 400V 240A Fwd Super Fast Recovery
товару немає в наявності
В кошику
од. на суму грн.
| MUR2X120A06 |
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Виробник: GeneSiC Semiconductor
Description: DIODE GEN PURP 600V 120A SOT227
Packaging: Bulk
Package / Case: SOT-227-4, miniBLOC
Mounting Type: Chassis Mount
Speed: Standard Recovery >500ns, > 200mA (Io)
Technology: Standard
Diode Configuration: 2 Independent
Current - Average Rectified (Io) (per Diode): 120A
Supplier Device Package: SOT-227
Operating Temperature - Junction: -55°C ~ 175°C
Part Status: Active
Voltage - DC Reverse (Vr) (Max): 600 V
Voltage - Forward (Vf) (Max) @ If: 1.3 V @ 120 A
Current - Reverse Leakage @ Vr: 25 µA @ 600 V
Description: DIODE GEN PURP 600V 120A SOT227
Packaging: Bulk
Package / Case: SOT-227-4, miniBLOC
Mounting Type: Chassis Mount
Speed: Standard Recovery >500ns, > 200mA (Io)
Technology: Standard
Diode Configuration: 2 Independent
Current - Average Rectified (Io) (per Diode): 120A
Supplier Device Package: SOT-227
Operating Temperature - Junction: -55°C ~ 175°C
Part Status: Active
Voltage - DC Reverse (Vr) (Max): 600 V
Voltage - Forward (Vf) (Max) @ If: 1.3 V @ 120 A
Current - Reverse Leakage @ Vr: 25 µA @ 600 V
товару немає в наявності
В кошику
од. на суму грн.
| MUR2X120A06 |
![]() |
Виробник: GeneSiC Semiconductor
Discrete Semiconductor Modules 600V 240A Fwd Super Fast Recovery
Discrete Semiconductor Modules 600V 240A Fwd Super Fast Recovery
товару немає в наявності
В кошику
од. на суму грн.
| MUR2X120A10 |
![]() |
Виробник: GeneSiC Semiconductor
Description: DIODE MOD GP 1000V 120A SOT-227
Packaging: Bulk
Package / Case: SOT-227-4, miniBLOC
Mounting Type: Chassis Mount
Speed: Standard Recovery >500ns, > 200mA (Io)
Technology: Standard
Diode Configuration: 2 Independent
Current - Average Rectified (Io) (per Diode): 120A
Supplier Device Package: SOT-227
Operating Temperature - Junction: -55°C ~ 175°C
Part Status: Active
Voltage - DC Reverse (Vr) (Max): 1000 V
Voltage - Forward (Vf) (Max) @ If: 2.35 V @ 120 A
Current - Reverse Leakage @ Vr: 25 µA @ 1000 V
Description: DIODE MOD GP 1000V 120A SOT-227
Packaging: Bulk
Package / Case: SOT-227-4, miniBLOC
Mounting Type: Chassis Mount
Speed: Standard Recovery >500ns, > 200mA (Io)
Technology: Standard
Diode Configuration: 2 Independent
Current - Average Rectified (Io) (per Diode): 120A
Supplier Device Package: SOT-227
Operating Temperature - Junction: -55°C ~ 175°C
Part Status: Active
Voltage - DC Reverse (Vr) (Max): 1000 V
Voltage - Forward (Vf) (Max) @ If: 2.35 V @ 120 A
Current - Reverse Leakage @ Vr: 25 µA @ 1000 V
товару немає в наявності
В кошику
од. на суму грн.
| MUR2X120A10 |
![]() |
Виробник: GeneSiC Semiconductor
Discrete Semiconductor Modules 1000V 240A Fwd Super Fast Recovery
Discrete Semiconductor Modules 1000V 240A Fwd Super Fast Recovery
товару немає в наявності
В кошику
од. на суму грн.
| MUR2X120A12 |
![]() |
Виробник: GeneSiC Semiconductor
Description: DIODE GEN PURP 1.2KV 120A SOT227
Description: DIODE GEN PURP 1.2KV 120A SOT227
товару немає в наявності
В кошику
од. на суму грн.
| MUR2X120A12 |
![]() |
Виробник: GeneSiC Semiconductor
Discrete Semiconductor Modules 1200V 240A Fwd Super Fast Recovery
Discrete Semiconductor Modules 1200V 240A Fwd Super Fast Recovery
товару немає в наявності
В кошику
од. на суму грн.
| MUR30005CT |
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Виробник: GeneSiC Semiconductor
Rectifiers 50V 300A Super Fast Recovery
Rectifiers 50V 300A Super Fast Recovery
товару немає в наявності
В кошику
од. на суму грн.
| MUR30005CT |
![]() |
Виробник: GeneSiC Semiconductor
Description: DIODE MODULE GP 50V 150A 2TOWER
Packaging: Bulk
Package / Case: Twin Tower
Mounting Type: Chassis Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 90 ns
Technology: Standard
Diode Configuration: 1 Pair Common Cathode
Current - Average Rectified (Io) (per Diode): 150A
Supplier Device Package: Twin Tower
Operating Temperature - Junction: -55°C ~ 150°C
Voltage - DC Reverse (Vr) (Max): 50 V
Voltage - Forward (Vf) (Max) @ If: 1.3 V @ 100 A
Current - Reverse Leakage @ Vr: 25 µA @ 50 V
Description: DIODE MODULE GP 50V 150A 2TOWER
Packaging: Bulk
Package / Case: Twin Tower
Mounting Type: Chassis Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 90 ns
Technology: Standard
Diode Configuration: 1 Pair Common Cathode
Current - Average Rectified (Io) (per Diode): 150A
Supplier Device Package: Twin Tower
Operating Temperature - Junction: -55°C ~ 150°C
Voltage - DC Reverse (Vr) (Max): 50 V
Voltage - Forward (Vf) (Max) @ If: 1.3 V @ 100 A
Current - Reverse Leakage @ Vr: 25 µA @ 50 V
товару немає в наявності
В кошику
од. на суму грн.
| MUR30005CTR |
![]() |
Виробник: GeneSiC Semiconductor
Rectifiers 50V 300A Super Fast Recovery
Rectifiers 50V 300A Super Fast Recovery
товару немає в наявності
В кошику
од. на суму грн.
| MUR30005CTR |
![]() |
Виробник: GeneSiC Semiconductor
Description: DIODE MODULE GP 50V 150A 2TOWER
Packaging: Bulk
Package / Case: Twin Tower
Mounting Type: Chassis Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 90 ns
Technology: Standard
Diode Configuration: 1 Pair Common Anode
Current - Average Rectified (Io) (per Diode): 150A
Supplier Device Package: Twin Tower
Operating Temperature - Junction: -55°C ~ 150°C
Voltage - DC Reverse (Vr) (Max): 50 V
Voltage - Forward (Vf) (Max) @ If: 1.3 V @ 100 A
Current - Reverse Leakage @ Vr: 25 µA @ 50 V
Description: DIODE MODULE GP 50V 150A 2TOWER
Packaging: Bulk
Package / Case: Twin Tower
Mounting Type: Chassis Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 90 ns
Technology: Standard
Diode Configuration: 1 Pair Common Anode
Current - Average Rectified (Io) (per Diode): 150A
Supplier Device Package: Twin Tower
Operating Temperature - Junction: -55°C ~ 150°C
Voltage - DC Reverse (Vr) (Max): 50 V
Voltage - Forward (Vf) (Max) @ If: 1.3 V @ 100 A
Current - Reverse Leakage @ Vr: 25 µA @ 50 V
товару немає в наявності
В кошику
од. на суму грн.
| MUR30010CT |
![]() |
Виробник: GeneSiC Semiconductor
Description: DIODE MODULE GP 100V 150A 2TOWER
Packaging: Bulk
Package / Case: Twin Tower
Mounting Type: Chassis Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 90 ns
Technology: Standard
Diode Configuration: 1 Pair Common Cathode
Current - Average Rectified (Io) (per Diode): 150A
Supplier Device Package: Twin Tower
Operating Temperature - Junction: -55°C ~ 150°C
Voltage - DC Reverse (Vr) (Max): 100 V
Voltage - Forward (Vf) (Max) @ If: 1.3 V @ 100 A
Current - Reverse Leakage @ Vr: 25 µA @ 50 V
Description: DIODE MODULE GP 100V 150A 2TOWER
Packaging: Bulk
Package / Case: Twin Tower
Mounting Type: Chassis Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 90 ns
Technology: Standard
Diode Configuration: 1 Pair Common Cathode
Current - Average Rectified (Io) (per Diode): 150A
Supplier Device Package: Twin Tower
Operating Temperature - Junction: -55°C ~ 150°C
Voltage - DC Reverse (Vr) (Max): 100 V
Voltage - Forward (Vf) (Max) @ If: 1.3 V @ 100 A
Current - Reverse Leakage @ Vr: 25 µA @ 50 V
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В кошику
од. на суму грн.
| MUR30010CT |
![]() |
Виробник: GeneSiC Semiconductor
Diode Modules 100V 300A Super Fast Recovery
Diode Modules 100V 300A Super Fast Recovery
товару немає в наявності
В кошику
од. на суму грн.
| MUR30010CTR |
![]() |
Виробник: GeneSiC Semiconductor
Description: DIODE MODULE GP 100V 150A 2TOWER
Packaging: Bulk
Package / Case: Twin Tower
Mounting Type: Chassis Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 90 ns
Technology: Standard
Diode Configuration: 1 Pair Common Anode
Current - Average Rectified (Io) (per Diode): 150A
Supplier Device Package: Twin Tower
Operating Temperature - Junction: -55°C ~ 150°C
Voltage - DC Reverse (Vr) (Max): 100 V
Voltage - Forward (Vf) (Max) @ If: 1.3 V @ 100 A
Current - Reverse Leakage @ Vr: 25 µA @ 50 V
Description: DIODE MODULE GP 100V 150A 2TOWER
Packaging: Bulk
Package / Case: Twin Tower
Mounting Type: Chassis Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 90 ns
Technology: Standard
Diode Configuration: 1 Pair Common Anode
Current - Average Rectified (Io) (per Diode): 150A
Supplier Device Package: Twin Tower
Operating Temperature - Junction: -55°C ~ 150°C
Voltage - DC Reverse (Vr) (Max): 100 V
Voltage - Forward (Vf) (Max) @ If: 1.3 V @ 100 A
Current - Reverse Leakage @ Vr: 25 µA @ 50 V
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В кошику
од. на суму грн.
| MUR30010CTR |
![]() |
Виробник: GeneSiC Semiconductor
Diode Modules 100V 300A Super Fast Recovery
Diode Modules 100V 300A Super Fast Recovery
товару немає в наявності
В кошику
од. на суму грн.
| MUR30020CT |
![]() |
Виробник: GeneSiC Semiconductor
Description: DIODE MODULE GP 200V 150A 2TOWER
Packaging: Bulk
Package / Case: Twin Tower
Mounting Type: Chassis Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 90 ns
Technology: Standard
Diode Configuration: 1 Pair Common Cathode
Current - Average Rectified (Io) (per Diode): 150A
Supplier Device Package: Twin Tower
Operating Temperature - Junction: -55°C ~ 150°C
Voltage - DC Reverse (Vr) (Max): 200 V
Voltage - Forward (Vf) (Max) @ If: 1.3 V @ 100 A
Current - Reverse Leakage @ Vr: 25 µA @ 50 V
Description: DIODE MODULE GP 200V 150A 2TOWER
Packaging: Bulk
Package / Case: Twin Tower
Mounting Type: Chassis Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 90 ns
Technology: Standard
Diode Configuration: 1 Pair Common Cathode
Current - Average Rectified (Io) (per Diode): 150A
Supplier Device Package: Twin Tower
Operating Temperature - Junction: -55°C ~ 150°C
Voltage - DC Reverse (Vr) (Max): 200 V
Voltage - Forward (Vf) (Max) @ If: 1.3 V @ 100 A
Current - Reverse Leakage @ Vr: 25 µA @ 50 V
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В кошику
од. на суму грн.
| MUR30020CT |
![]() |
Виробник: GeneSiC Semiconductor
Diode Modules SI S-FST RECOV 2TWR 50-600V300A200P/141R
Diode Modules SI S-FST RECOV 2TWR 50-600V300A200P/141R
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од. на суму грн.
| MUR30020CTR |
![]() |
Виробник: GeneSiC Semiconductor
Diode Modules SI S-FST RECOV 2TWR 50-600V300A200P/141R
Diode Modules SI S-FST RECOV 2TWR 50-600V300A200P/141R
товару немає в наявності
В кошику
од. на суму грн.

