Продукція > GENESIC SEMICONDUCTOR > Всі товари виробника GENESIC SEMICONDUCTOR (4204) > Сторінка 59 з 71
| Фото | Назва | Виробник | Інформація |
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MUR2X030A06 | GeneSiC Semiconductor |
 Description: DIODE MODULE GP 600V 30A SOT-227Packaging: Bulk Package / Case: SOT-227-4, miniBLOC Mounting Type: Chassis Mount Speed: Fast Recovery =< 500ns, > 200mA (Io) Reverse Recovery Time (trr): 60 ns Technology: Standard Diode Configuration: 2 Independent Current - Average Rectified (Io) (per Diode): 30A Supplier Device Package: SOT-227 Operating Temperature - Junction: -55°C ~ 175°C Part Status: Obsolete Voltage - DC Reverse (Vr) (Max): 600 V Voltage - Forward (Vf) (Max) @ If: 1.5 V @ 30 A Current - Reverse Leakage @ Vr: 25 µA @ 600 V |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||||
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MUR2X030A06 | GeneSiC Semiconductor |
Rectifiers 600V 60A Fwd Super Fast Recovery |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||||
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MUR2X030A10 | GeneSiC Semiconductor |
Rectifiers 1000V 60A Fwd Super Fast Recovery |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||||
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MUR2X030A12 | GeneSiC Semiconductor |
Description: DIODE MODULE GP 1200V 30A SOT227 Packaging: Bulk Package / Case: SOT-227-4, miniBLOC Mounting Type: Chassis Mount Speed: Fast Recovery =< 500ns, > 200mA (Io) Reverse Recovery Time (trr): 85 ns Technology: Standard Diode Configuration: 2 Independent Current - Average Rectified (Io) (per Diode): 30A Supplier Device Package: SOT-227 Operating Temperature - Junction: -65°C ~ 175°C Part Status: Obsolete Voltage - DC Reverse (Vr) (Max): 1200 V Voltage - Forward (Vf) (Max) @ If: 2.35 V @ 30 A Current - Reverse Leakage @ Vr: 25 µA @ 1200 V |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||||
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MUR2X030A12 | GeneSiC Semiconductor |
Rectifiers 1200V 60A Fwd Super Fast Recovery |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||||
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MUR2X060A02 | GeneSiC Semiconductor |
Diode Modules 200V 120A Fwd Super Fast Recovery |
на замовлення 118 шт: термін постачання 21-30 дні (днів) |
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MUR2X060A04 | GeneSiC Semiconductor |
Description: DIODE MODULE GP 400V 60A SOT227 Packaging: Bulk Package / Case: SOT-227-4, miniBLOC Mounting Type: Chassis Mount Speed: Fast Recovery =< 500ns, > 200mA (Io) Reverse Recovery Time (trr): 75 ns Technology: Standard Diode Configuration: 2 Independent Current - Average Rectified (Io) (per Diode): 60A Supplier Device Package: SOT-227 Operating Temperature - Junction: -55°C ~ 175°C Part Status: Active Voltage - DC Reverse (Vr) (Max): 400 V Voltage - Forward (Vf) (Max) @ If: 1.3 V @ 60 A Current - Reverse Leakage @ Vr: 25 µA @ 400 V |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||||
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MUR2X060A04 | GeneSiC Semiconductor |
Discrete Semiconductor Modules 400V 120A Fwd Super Fast Recovery |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||||
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MUR2X060A06 | GeneSiC Semiconductor |
Diode Modules 600V 120A Fwd Super Fast Recovery |
на замовлення 143 шт: термін постачання 21-30 дні (днів) |
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MUR2X060A06 | GeneSiC Semiconductor |
Description: DIODE MODULE GP 600V 60A SOT-227 Packaging: Bulk Package / Case: SOT-227-4, miniBLOC Mounting Type: Chassis Mount Speed: Fast Recovery =< 500ns, > 200mA (Io) Reverse Recovery Time (trr): 90 ns Technology: Standard Diode Configuration: 2 Independent Current - Average Rectified (Io) (per Diode): 60A Supplier Device Package: SOT-227 Operating Temperature - Junction: -55°C ~ 175°C Part Status: Active Voltage - DC Reverse (Vr) (Max): 600 V Voltage - Forward (Vf) (Max) @ If: 1.5 V @ 60 A Current - Reverse Leakage @ Vr: 25 µA @ 600 V |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||||
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MUR2X060A10 | GeneSiC Semiconductor |
Discrete Semiconductor Modules 1000V 120A Fwd Super Fast Recovery |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||||
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MUR2X060A10 | GeneSiC Semiconductor |
Description: DIODE GEN PURP 1KV 60A SOT227 |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||||
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MUR2X060A12 | GeneSiC Semiconductor |
Description: DIODE GEN PURP 1.2KV 60A SOT227 |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||||
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MUR2X060A12 | GeneSiC Semiconductor |
Discrete Semiconductor Modules 1200V 120A Fwd Super Fast Recovery |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||||
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MUR2X100A02 | GeneSiC Semiconductor |
Diode Modules 200V 200A Fwd Super Fast Recovery |
на замовлення 82 шт: термін постачання 21-30 дні (днів) |
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MUR2X100A02 | GeneSiC Semiconductor |
Description: DIODE MODULE GP 200V 100A SOT227 Packaging: Bulk Package / Case: SOT-227-4, miniBLOC Mounting Type: Chassis Mount Speed: Fast Recovery =< 500ns, > 200mA (Io) Reverse Recovery Time (trr): 75 ns Technology: Standard Diode Configuration: 2 Independent Current - Average Rectified (Io) (per Diode): 100A Supplier Device Package: SOT-227 Operating Temperature - Junction: -55°C ~ 175°C Part Status: Active Voltage - DC Reverse (Vr) (Max): 200 V Voltage - Forward (Vf) (Max) @ If: 1 V @ 100 A Current - Reverse Leakage @ Vr: 25 µA @ 200 V |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||||
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MUR2X100A04 | GeneSiC Semiconductor |
Description: DIODE MODULE GP 400V 100A SOT227 Packaging: Bulk Package / Case: SOT-227-4, miniBLOC Mounting Type: Chassis Mount Speed: Fast Recovery =< 500ns, > 200mA (Io) Reverse Recovery Time (trr): 90 ns Technology: Standard Diode Configuration: 2 Independent Current - Average Rectified (Io) (per Diode): 100A Supplier Device Package: SOT-227 Operating Temperature - Junction: -55°C ~ 175°C Part Status: Active Voltage - DC Reverse (Vr) (Max): 400 V Voltage - Forward (Vf) (Max) @ If: 1.3 V @ 100 A Current - Reverse Leakage @ Vr: 25 µA @ 400 V |
на замовлення 12 шт: термін постачання 21-31 дні (днів) |
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MUR2X100A04 | GeneSiC Semiconductor |
Discrete Semiconductor Modules 400V 200A Fwd Super Fast Recovery |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||||
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MUR2X100A06 | GeneSiC Semiconductor |
Description: DIODE GEN PURP 600V 100A SOT227 |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||||
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MUR2X100A06 | GeneSiC Semiconductor |
Discrete Semiconductor Modules 600V 200A Fwd Super Fast Recovery |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||||
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MUR2X100A10 | GeneSiC Semiconductor |
Discrete Semiconductor Modules 1000V 200A Fwd Super Fast Recovery |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||||
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MUR2X100A10 | GeneSiC Semiconductor |
Description: DIODE GEN PURP 1KV 100A SOT227 |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||||
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MUR2X100A12 | GeneSiC Semiconductor |
Discrete Semiconductor Modules 1200V 200A Fwd Super Fast Recovery |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||||
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MUR2X100A12 | GeneSiC Semiconductor |
Description: DIODE GEN PURP 1.2KV 100A SOT227 |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||||
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MUR2X120A02 | GeneSiC Semiconductor |
Discrete Semiconductor Modules 200V 240A Fwd Super Fast Recovery |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||||
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MUR2X120A02 | GeneSiC Semiconductor |
Description: DIODE GEN PURP 200V 120A SOT227 Packaging: Bulk Package / Case: SOT-227-4, miniBLOC Mounting Type: Chassis Mount Speed: Standard Recovery >500ns, > 200mA (Io) Technology: Standard Diode Configuration: 2 Independent Current - Average Rectified (Io) (per Diode): 120A Supplier Device Package: SOT-227 Operating Temperature - Junction: -55°C ~ 175°C Part Status: Active Voltage - DC Reverse (Vr) (Max): 200 V Voltage - Forward (Vf) (Max) @ If: 1 V @ 120 A Current - Reverse Leakage @ Vr: 25 µA @ 200 V |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||||
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MUR2X120A04 | GeneSiC Semiconductor |
Description: DIODE GEN PURP 400V 120A SOT227 |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||||
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MUR2X120A04 | GeneSiC Semiconductor |
Discrete Semiconductor Modules 400V 240A Fwd Super Fast Recovery |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||||
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MUR2X120A06 | GeneSiC Semiconductor |
Description: DIODE GEN PURP 600V 120A SOT227 Packaging: Bulk Package / Case: SOT-227-4, miniBLOC Mounting Type: Chassis Mount Speed: Standard Recovery >500ns, > 200mA (Io) Technology: Standard Diode Configuration: 2 Independent Current - Average Rectified (Io) (per Diode): 120A Supplier Device Package: SOT-227 Operating Temperature - Junction: -55°C ~ 175°C Part Status: Active Voltage - DC Reverse (Vr) (Max): 600 V Voltage - Forward (Vf) (Max) @ If: 1.3 V @ 120 A Current - Reverse Leakage @ Vr: 25 µA @ 600 V |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||||
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MUR2X120A06 | GeneSiC Semiconductor |
Discrete Semiconductor Modules 600V 240A Fwd Super Fast Recovery |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||||
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MUR2X120A10 | GeneSiC Semiconductor |
Discrete Semiconductor Modules 1000V 240A Fwd Super Fast Recovery |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||||
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MUR2X120A10 | GeneSiC Semiconductor |
Description: DIODE MOD GP 1000V 120A SOT-227 Packaging: Bulk Package / Case: SOT-227-4, miniBLOC Mounting Type: Chassis Mount Speed: Standard Recovery >500ns, > 200mA (Io) Technology: Standard Diode Configuration: 2 Independent Current - Average Rectified (Io) (per Diode): 120A Supplier Device Package: SOT-227 Operating Temperature - Junction: -55°C ~ 175°C Part Status: Active Voltage - DC Reverse (Vr) (Max): 1000 V Voltage - Forward (Vf) (Max) @ If: 2.35 V @ 120 A Current - Reverse Leakage @ Vr: 25 µA @ 1000 V |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||||
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MUR2X120A12 | GeneSiC Semiconductor |
Discrete Semiconductor Modules 1200V 240A Fwd Super Fast Recovery |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||||
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MUR2X120A12 | GeneSiC Semiconductor |
Description: DIODE GEN PURP 1.2KV 120A SOT227 |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||||
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MUR30005CT | GeneSiC Semiconductor |
Rectifiers 50V 300A Super Fast Recovery |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||||
| MUR30005CT | GeneSiC Semiconductor |
Description: DIODE MODULE GP 50V 150A 2TOWER Packaging: Bulk Package / Case: Twin Tower Mounting Type: Chassis Mount Speed: Fast Recovery =< 500ns, > 200mA (Io) Reverse Recovery Time (trr): 90 ns Technology: Standard Diode Configuration: 1 Pair Common Cathode Current - Average Rectified (Io) (per Diode): 150A Supplier Device Package: Twin Tower Operating Temperature - Junction: -55°C ~ 150°C Voltage - DC Reverse (Vr) (Max): 50 V Voltage - Forward (Vf) (Max) @ If: 1.3 V @ 100 A Current - Reverse Leakage @ Vr: 25 µA @ 50 V |
товару немає в наявності |
В кошику од. на суму грн. | |||||||||||
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MUR30005CTR | GeneSiC Semiconductor |
Rectifiers 50V 300A Super Fast Recovery |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||||
| MUR30005CTR | GeneSiC Semiconductor |
Description: DIODE MODULE GP 50V 150A 2TOWER Packaging: Bulk Package / Case: Twin Tower Mounting Type: Chassis Mount Speed: Fast Recovery =< 500ns, > 200mA (Io) Reverse Recovery Time (trr): 90 ns Technology: Standard Diode Configuration: 1 Pair Common Anode Current - Average Rectified (Io) (per Diode): 150A Supplier Device Package: Twin Tower Operating Temperature - Junction: -55°C ~ 150°C Voltage - DC Reverse (Vr) (Max): 50 V Voltage - Forward (Vf) (Max) @ If: 1.3 V @ 100 A Current - Reverse Leakage @ Vr: 25 µA @ 50 V |
товару немає в наявності |
В кошику од. на суму грн. | |||||||||||
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MUR30010CT | GeneSiC Semiconductor |
Diode Modules 100V 300A Super Fast Recovery |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||||
| MUR30010CT | GeneSiC Semiconductor |
Description: DIODE MODULE GP 100V 150A 2TOWER Packaging: Bulk Package / Case: Twin Tower Mounting Type: Chassis Mount Speed: Fast Recovery =< 500ns, > 200mA (Io) Reverse Recovery Time (trr): 90 ns Technology: Standard Diode Configuration: 1 Pair Common Cathode Current - Average Rectified (Io) (per Diode): 150A Supplier Device Package: Twin Tower Operating Temperature - Junction: -55°C ~ 150°C Voltage - DC Reverse (Vr) (Max): 100 V Voltage - Forward (Vf) (Max) @ If: 1.3 V @ 100 A Current - Reverse Leakage @ Vr: 25 µA @ 50 V |
товару немає в наявності |
В кошику од. на суму грн. | |||||||||||
| MUR30010CTR | GeneSiC Semiconductor |
Description: DIODE MODULE GP 100V 150A 2TOWER Packaging: Bulk Package / Case: Twin Tower Mounting Type: Chassis Mount Speed: Fast Recovery =< 500ns, > 200mA (Io) Reverse Recovery Time (trr): 90 ns Technology: Standard Diode Configuration: 1 Pair Common Anode Current - Average Rectified (Io) (per Diode): 150A Supplier Device Package: Twin Tower Operating Temperature - Junction: -55°C ~ 150°C Voltage - DC Reverse (Vr) (Max): 100 V Voltage - Forward (Vf) (Max) @ If: 1.3 V @ 100 A Current - Reverse Leakage @ Vr: 25 µA @ 50 V |
товару немає в наявності |
В кошику од. на суму грн. | |||||||||||
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MUR30010CTR | GeneSiC Semiconductor |
Diode Modules 100V 300A Super Fast Recovery |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||||
| MUR30020CT | GeneSiC Semiconductor |
Description: DIODE MODULE GP 200V 150A 2TOWER Packaging: Bulk Package / Case: Twin Tower Mounting Type: Chassis Mount Speed: Fast Recovery =< 500ns, > 200mA (Io) Reverse Recovery Time (trr): 90 ns Technology: Standard Diode Configuration: 1 Pair Common Cathode Current - Average Rectified (Io) (per Diode): 150A Supplier Device Package: Twin Tower Operating Temperature - Junction: -55°C ~ 150°C Voltage - DC Reverse (Vr) (Max): 200 V Voltage - Forward (Vf) (Max) @ If: 1.3 V @ 100 A Current - Reverse Leakage @ Vr: 25 µA @ 50 V |
товару немає в наявності |
В кошику од. на суму грн. | |||||||||||
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MUR30020CT | GeneSiC Semiconductor |
Diode Modules SI S-FST RECOV 2TWR 50-600V300A200P/141R |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||||
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MUR30020CTR | GeneSiC Semiconductor |
Diode Modules SI S-FST RECOV 2TWR 50-600V300A200P/141R |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||||
| MUR30020CTR | GeneSiC Semiconductor |
Description: DIODE MODULE GP 200V 150A 2TOWER Packaging: Bulk Package / Case: Twin Tower Mounting Type: Chassis Mount Speed: Fast Recovery =< 500ns, > 200mA (Io) Reverse Recovery Time (trr): 90 ns Technology: Standard Diode Configuration: 1 Pair Common Anode Current - Average Rectified (Io) (per Diode): 150A Supplier Device Package: Twin Tower Operating Temperature - Junction: -55°C ~ 150°C Voltage - DC Reverse (Vr) (Max): 200 V Voltage - Forward (Vf) (Max) @ If: 1.3 V @ 100 A Current - Reverse Leakage @ Vr: 25 µA @ 50 V |
товару немає в наявності |
В кошику од. на суму грн. | |||||||||||
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MUR30040CT | GeneSiC Semiconductor |
Diode Modules SI S-FST RECOV 2TWR 50-600V300A400P/280R |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||||
| MUR30040CT | GeneSiC Semiconductor |
Description: DIODE MODULE GP 400V 150A 2TOWER Packaging: Bulk Package / Case: Twin Tower Mounting Type: Chassis Mount Speed: Fast Recovery =< 500ns, > 200mA (Io) Reverse Recovery Time (trr): 90 ns Technology: Standard Diode Configuration: 1 Pair Common Cathode Current - Average Rectified (Io) (per Diode): 150A Supplier Device Package: Twin Tower Operating Temperature - Junction: -55°C ~ 150°C Voltage - DC Reverse (Vr) (Max): 400 V Voltage - Forward (Vf) (Max) @ If: 1.5 V @ 100 A Current - Reverse Leakage @ Vr: 25 µA @ 50 V |
товару немає в наявності |
В кошику од. на суму грн. | |||||||||||
| MUR30040CTR | GeneSiC Semiconductor |
Description: DIODE MODULE GP 400V 150A 2TOWER Packaging: Bulk Package / Case: Twin Tower Mounting Type: Chassis Mount Speed: Fast Recovery =< 500ns, > 200mA (Io) Reverse Recovery Time (trr): 90 ns Technology: Standard Diode Configuration: 1 Pair Common Anode Current - Average Rectified (Io) (per Diode): 150A Supplier Device Package: Twin Tower Operating Temperature - Junction: -55°C ~ 150°C Voltage - DC Reverse (Vr) (Max): 400 V Voltage - Forward (Vf) (Max) @ If: 1.5 V @ 100 A Current - Reverse Leakage @ Vr: 25 µA @ 50 V |
товару немає в наявності |
В кошику од. на суму грн. | |||||||||||
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MUR30040CTR | GeneSiC Semiconductor |
Diode Modules SI S-FST RECOV 2TWR 50-600V300A400P/280R |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||||
| MUR30060CT | GeneSiC Semiconductor |
Description: DIODE MODULE GP 600V 150A 2TOWER Packaging: Bulk Package / Case: Twin Tower Mounting Type: Chassis Mount Speed: Fast Recovery =< 500ns, > 200mA (Io) Reverse Recovery Time (trr): 90 ns Technology: Standard Diode Configuration: 1 Pair Common Cathode Current - Average Rectified (Io) (per Diode): 150A Supplier Device Package: Twin Tower Operating Temperature - Junction: -55°C ~ 150°C Voltage - DC Reverse (Vr) (Max): 600 V Voltage - Forward (Vf) (Max) @ If: 1.7 V @ 100 A Current - Reverse Leakage @ Vr: 25 µA @ 50 V |
товару немає в наявності |
В кошику од. на суму грн. | |||||||||||
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MUR30060CT | GeneSiC Semiconductor |
Diode Modules SI S-FST RECOV 2TWR 50-600V300A600P/420R |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||||
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MUR30060CTR | GeneSiC Semiconductor |
Diode Modules SI S-FST RECOV 2TWR 50-600V300A600P/420R |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||||
| MUR30060CTR | GeneSiC Semiconductor |
Description: DIODE MODULE GP 600V 150A 2TOWER Packaging: Bulk Package / Case: Twin Tower Mounting Type: Chassis Mount Speed: Fast Recovery =< 500ns, > 200mA (Io) Reverse Recovery Time (trr): 90 ns Technology: Standard Diode Configuration: 1 Pair Common Anode Current - Average Rectified (Io) (per Diode): 150A Supplier Device Package: Twin Tower Operating Temperature - Junction: -55°C ~ 150°C Voltage - DC Reverse (Vr) (Max): 600 V Voltage - Forward (Vf) (Max) @ If: 1.7 V @ 100 A Current - Reverse Leakage @ Vr: 25 µA @ 50 V |
товару немає в наявності |
В кошику од. на суму грн. | |||||||||||
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MUR40005CT | GeneSiC Semiconductor |
Diode Modules SI S-FST RECOV 2TWR 50-600V 400A 50P/35R |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||||
| MUR40005CT | GeneSiC Semiconductor |
Description: DIODE MODULE GP 50V 200A 2TOWER Packaging: Bulk Package / Case: Twin Tower Mounting Type: Chassis Mount Speed: Fast Recovery =< 500ns, > 200mA (Io) Reverse Recovery Time (trr): 90 ns Technology: Standard Diode Configuration: 1 Pair Common Cathode Current - Average Rectified (Io) (per Diode): 200A Supplier Device Package: Twin Tower Operating Temperature - Junction: -55°C ~ 150°C Part Status: Obsolete Voltage - DC Reverse (Vr) (Max): 50 V Voltage - Forward (Vf) (Max) @ If: 1.3 V @ 125 A Current - Reverse Leakage @ Vr: 25 µA @ 50 V |
товару немає в наявності |
В кошику од. на суму грн. | |||||||||||
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MUR40005CTR | GeneSiC Semiconductor |
Diode Modules SI S-FST RECOV 2TWR 50-600V 400A 50P/35R |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||||
| MUR40005CTR | GeneSiC Semiconductor |
Description: DIODE MODULE GP 50V 200A 2TOWER Packaging: Bulk Package / Case: Twin Tower Mounting Type: Chassis Mount Speed: Fast Recovery =< 500ns, > 200mA (Io) Reverse Recovery Time (trr): 90 ns Technology: Standard Diode Configuration: 1 Pair Common Anode Current - Average Rectified (Io) (per Diode): 200A Supplier Device Package: Twin Tower Operating Temperature - Junction: -55°C ~ 150°C Part Status: Obsolete Voltage - DC Reverse (Vr) (Max): 50 V Voltage - Forward (Vf) (Max) @ If: 1.3 V @ 125 A Current - Reverse Leakage @ Vr: 25 µA @ 50 V |
товару немає в наявності |
В кошику од. на суму грн. | |||||||||||
| MUR40010CT | GeneSiC Semiconductor |
Description: DIODE MODULE GP 100V 200A 2TOWER Packaging: Bulk Package / Case: Twin Tower Mounting Type: Chassis Mount Speed: Fast Recovery =< 500ns, > 200mA (Io) Reverse Recovery Time (trr): 90 ns Technology: Standard Diode Configuration: 1 Pair Common Cathode Current - Average Rectified (Io) (per Diode): 200A Supplier Device Package: Twin Tower Part Status: Active Voltage - DC Reverse (Vr) (Max): 100 V Voltage - Forward (Vf) (Max) @ If: 1.3 V @ 125 A Current - Reverse Leakage @ Vr: 25 µA @ 50 V |
товару немає в наявності |
В кошику од. на суму грн. | |||||||||||
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MUR40010CT | GeneSiC Semiconductor |
Diode Modules SI S-FST RECOV 2TWR 50-600V 400A100P/70R |
товару немає в наявності |
В кошику од. на суму грн. |
| MUR2X030A06 |
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Виробник: GeneSiC Semiconductor
Description: DIODE MODULE GP 600V 30A SOT-227
Packaging: Bulk
Package / Case: SOT-227-4, miniBLOC
Mounting Type: Chassis Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 60 ns
Technology: Standard
Diode Configuration: 2 Independent
Current - Average Rectified (Io) (per Diode): 30A
Supplier Device Package: SOT-227
Operating Temperature - Junction: -55°C ~ 175°C
Part Status: Obsolete
Voltage - DC Reverse (Vr) (Max): 600 V
Voltage - Forward (Vf) (Max) @ If: 1.5 V @ 30 A
Current - Reverse Leakage @ Vr: 25 µA @ 600 V
Description: DIODE MODULE GP 600V 30A SOT-227
Packaging: Bulk
Package / Case: SOT-227-4, miniBLOC
Mounting Type: Chassis Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 60 ns
Technology: Standard
Diode Configuration: 2 Independent
Current - Average Rectified (Io) (per Diode): 30A
Supplier Device Package: SOT-227
Operating Temperature - Junction: -55°C ~ 175°C
Part Status: Obsolete
Voltage - DC Reverse (Vr) (Max): 600 V
Voltage - Forward (Vf) (Max) @ If: 1.5 V @ 30 A
Current - Reverse Leakage @ Vr: 25 µA @ 600 V
товару немає в наявності
В кошику
од. на суму грн.
| MUR2X030A06 |
|
Виробник: GeneSiC Semiconductor
Rectifiers 600V 60A Fwd Super Fast Recovery
Rectifiers 600V 60A Fwd Super Fast Recovery
товару немає в наявності
В кошику
од. на суму грн.
| MUR2X030A10 |
|
Виробник: GeneSiC Semiconductor
Rectifiers 1000V 60A Fwd Super Fast Recovery
Rectifiers 1000V 60A Fwd Super Fast Recovery
товару немає в наявності
В кошику
од. на суму грн.
| MUR2X030A12 |
|
Виробник: GeneSiC Semiconductor
Description: DIODE MODULE GP 1200V 30A SOT227
Packaging: Bulk
Package / Case: SOT-227-4, miniBLOC
Mounting Type: Chassis Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 85 ns
Technology: Standard
Diode Configuration: 2 Independent
Current - Average Rectified (Io) (per Diode): 30A
Supplier Device Package: SOT-227
Operating Temperature - Junction: -65°C ~ 175°C
Part Status: Obsolete
Voltage - DC Reverse (Vr) (Max): 1200 V
Voltage - Forward (Vf) (Max) @ If: 2.35 V @ 30 A
Current - Reverse Leakage @ Vr: 25 µA @ 1200 V
Description: DIODE MODULE GP 1200V 30A SOT227
Packaging: Bulk
Package / Case: SOT-227-4, miniBLOC
Mounting Type: Chassis Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 85 ns
Technology: Standard
Diode Configuration: 2 Independent
Current - Average Rectified (Io) (per Diode): 30A
Supplier Device Package: SOT-227
Operating Temperature - Junction: -65°C ~ 175°C
Part Status: Obsolete
Voltage - DC Reverse (Vr) (Max): 1200 V
Voltage - Forward (Vf) (Max) @ If: 2.35 V @ 30 A
Current - Reverse Leakage @ Vr: 25 µA @ 1200 V
товару немає в наявності
В кошику
од. на суму грн.
| MUR2X030A12 |
|
Виробник: GeneSiC Semiconductor
Rectifiers 1200V 60A Fwd Super Fast Recovery
Rectifiers 1200V 60A Fwd Super Fast Recovery
товару немає в наявності
В кошику
од. на суму грн.
| MUR2X060A02 |
|
Виробник: GeneSiC Semiconductor
Diode Modules 200V 120A Fwd Super Fast Recovery
Diode Modules 200V 120A Fwd Super Fast Recovery
на замовлення 118 шт:
термін постачання 21-30 дні (днів)| Кількість | Ціна |
|---|---|
| 1+ | 3311.08 грн |
| 10+ | 2814.32 грн |
| 25+ | 2239.92 грн |
| 104+ | 2190.89 грн |
| MUR2X060A04 |
|
Виробник: GeneSiC Semiconductor
Description: DIODE MODULE GP 400V 60A SOT227
Packaging: Bulk
Package / Case: SOT-227-4, miniBLOC
Mounting Type: Chassis Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 75 ns
Technology: Standard
Diode Configuration: 2 Independent
Current - Average Rectified (Io) (per Diode): 60A
Supplier Device Package: SOT-227
Operating Temperature - Junction: -55°C ~ 175°C
Part Status: Active
Voltage - DC Reverse (Vr) (Max): 400 V
Voltage - Forward (Vf) (Max) @ If: 1.3 V @ 60 A
Current - Reverse Leakage @ Vr: 25 µA @ 400 V
Description: DIODE MODULE GP 400V 60A SOT227
Packaging: Bulk
Package / Case: SOT-227-4, miniBLOC
Mounting Type: Chassis Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 75 ns
Technology: Standard
Diode Configuration: 2 Independent
Current - Average Rectified (Io) (per Diode): 60A
Supplier Device Package: SOT-227
Operating Temperature - Junction: -55°C ~ 175°C
Part Status: Active
Voltage - DC Reverse (Vr) (Max): 400 V
Voltage - Forward (Vf) (Max) @ If: 1.3 V @ 60 A
Current - Reverse Leakage @ Vr: 25 µA @ 400 V
товару немає в наявності
В кошику
од. на суму грн.
| MUR2X060A04 |
|
Виробник: GeneSiC Semiconductor
Discrete Semiconductor Modules 400V 120A Fwd Super Fast Recovery
Discrete Semiconductor Modules 400V 120A Fwd Super Fast Recovery
товару немає в наявності
В кошику
од. на суму грн.
| MUR2X060A06 |
|
Виробник: GeneSiC Semiconductor
Diode Modules 600V 120A Fwd Super Fast Recovery
Diode Modules 600V 120A Fwd Super Fast Recovery
на замовлення 143 шт:
термін постачання 21-30 дні (днів)| Кількість | Ціна |
|---|---|
| 1+ | 3580.74 грн |
| 10+ | 3041.47 грн |
| 25+ | 2492.77 грн |
| 52+ | 2383.50 грн |
| 104+ | 2368.09 грн |
| MUR2X060A06 |
|
Виробник: GeneSiC Semiconductor
Description: DIODE MODULE GP 600V 60A SOT-227
Packaging: Bulk
Package / Case: SOT-227-4, miniBLOC
Mounting Type: Chassis Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 90 ns
Technology: Standard
Diode Configuration: 2 Independent
Current - Average Rectified (Io) (per Diode): 60A
Supplier Device Package: SOT-227
Operating Temperature - Junction: -55°C ~ 175°C
Part Status: Active
Voltage - DC Reverse (Vr) (Max): 600 V
Voltage - Forward (Vf) (Max) @ If: 1.5 V @ 60 A
Current - Reverse Leakage @ Vr: 25 µA @ 600 V
Description: DIODE MODULE GP 600V 60A SOT-227
Packaging: Bulk
Package / Case: SOT-227-4, miniBLOC
Mounting Type: Chassis Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 90 ns
Technology: Standard
Diode Configuration: 2 Independent
Current - Average Rectified (Io) (per Diode): 60A
Supplier Device Package: SOT-227
Operating Temperature - Junction: -55°C ~ 175°C
Part Status: Active
Voltage - DC Reverse (Vr) (Max): 600 V
Voltage - Forward (Vf) (Max) @ If: 1.5 V @ 60 A
Current - Reverse Leakage @ Vr: 25 µA @ 600 V
товару немає в наявності
В кошику
од. на суму грн.
| MUR2X060A10 |
|
Виробник: GeneSiC Semiconductor
Discrete Semiconductor Modules 1000V 120A Fwd Super Fast Recovery
Discrete Semiconductor Modules 1000V 120A Fwd Super Fast Recovery
товару немає в наявності
В кошику
од. на суму грн.
| MUR2X060A10 |
|
Виробник: GeneSiC Semiconductor
Description: DIODE GEN PURP 1KV 60A SOT227
Description: DIODE GEN PURP 1KV 60A SOT227
товару немає в наявності
В кошику
од. на суму грн.
| MUR2X060A12 |
|
Виробник: GeneSiC Semiconductor
Description: DIODE GEN PURP 1.2KV 60A SOT227
Description: DIODE GEN PURP 1.2KV 60A SOT227
товару немає в наявності
В кошику
од. на суму грн.
| MUR2X060A12 |
|
Виробник: GeneSiC Semiconductor
Discrete Semiconductor Modules 1200V 120A Fwd Super Fast Recovery
Discrete Semiconductor Modules 1200V 120A Fwd Super Fast Recovery
товару немає в наявності
В кошику
од. на суму грн.
| MUR2X100A02 |
|
Виробник: GeneSiC Semiconductor
Diode Modules 200V 200A Fwd Super Fast Recovery
Diode Modules 200V 200A Fwd Super Fast Recovery
на замовлення 82 шт:
термін постачання 21-30 дні (днів)| Кількість | Ціна |
|---|---|
| 1+ | 3668.99 грн |
| 10+ | 3133.29 грн |
| 25+ | 2452.84 грн |
| MUR2X100A02 |
|
Виробник: GeneSiC Semiconductor
Description: DIODE MODULE GP 200V 100A SOT227
Packaging: Bulk
Package / Case: SOT-227-4, miniBLOC
Mounting Type: Chassis Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 75 ns
Technology: Standard
Diode Configuration: 2 Independent
Current - Average Rectified (Io) (per Diode): 100A
Supplier Device Package: SOT-227
Operating Temperature - Junction: -55°C ~ 175°C
Part Status: Active
Voltage - DC Reverse (Vr) (Max): 200 V
Voltage - Forward (Vf) (Max) @ If: 1 V @ 100 A
Current - Reverse Leakage @ Vr: 25 µA @ 200 V
Description: DIODE MODULE GP 200V 100A SOT227
Packaging: Bulk
Package / Case: SOT-227-4, miniBLOC
Mounting Type: Chassis Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 75 ns
Technology: Standard
Diode Configuration: 2 Independent
Current - Average Rectified (Io) (per Diode): 100A
Supplier Device Package: SOT-227
Operating Temperature - Junction: -55°C ~ 175°C
Part Status: Active
Voltage - DC Reverse (Vr) (Max): 200 V
Voltage - Forward (Vf) (Max) @ If: 1 V @ 100 A
Current - Reverse Leakage @ Vr: 25 µA @ 200 V
товару немає в наявності
В кошику
од. на суму грн.
| MUR2X100A04 |
|
Виробник: GeneSiC Semiconductor
Description: DIODE MODULE GP 400V 100A SOT227
Packaging: Bulk
Package / Case: SOT-227-4, miniBLOC
Mounting Type: Chassis Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 90 ns
Technology: Standard
Diode Configuration: 2 Independent
Current - Average Rectified (Io) (per Diode): 100A
Supplier Device Package: SOT-227
Operating Temperature - Junction: -55°C ~ 175°C
Part Status: Active
Voltage - DC Reverse (Vr) (Max): 400 V
Voltage - Forward (Vf) (Max) @ If: 1.3 V @ 100 A
Current - Reverse Leakage @ Vr: 25 µA @ 400 V
Description: DIODE MODULE GP 400V 100A SOT227
Packaging: Bulk
Package / Case: SOT-227-4, miniBLOC
Mounting Type: Chassis Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 90 ns
Technology: Standard
Diode Configuration: 2 Independent
Current - Average Rectified (Io) (per Diode): 100A
Supplier Device Package: SOT-227
Operating Temperature - Junction: -55°C ~ 175°C
Part Status: Active
Voltage - DC Reverse (Vr) (Max): 400 V
Voltage - Forward (Vf) (Max) @ If: 1.3 V @ 100 A
Current - Reverse Leakage @ Vr: 25 µA @ 400 V
на замовлення 12 шт:
термін постачання 21-31 дні (днів)| Кількість | Ціна |
|---|---|
| 1+ | 3946.12 грн |
| 10+ | 3292.27 грн |
| MUR2X100A04 |
|
Виробник: GeneSiC Semiconductor
Discrete Semiconductor Modules 400V 200A Fwd Super Fast Recovery
Discrete Semiconductor Modules 400V 200A Fwd Super Fast Recovery
товару немає в наявності
В кошику
од. на суму грн.
| MUR2X100A06 |
|
Виробник: GeneSiC Semiconductor
Description: DIODE GEN PURP 600V 100A SOT227
Description: DIODE GEN PURP 600V 100A SOT227
товару немає в наявності
В кошику
од. на суму грн.
| MUR2X100A06 |
|
Виробник: GeneSiC Semiconductor
Discrete Semiconductor Modules 600V 200A Fwd Super Fast Recovery
Discrete Semiconductor Modules 600V 200A Fwd Super Fast Recovery
товару немає в наявності
В кошику
од. на суму грн.
| MUR2X100A10 |
|
Виробник: GeneSiC Semiconductor
Discrete Semiconductor Modules 1000V 200A Fwd Super Fast Recovery
Discrete Semiconductor Modules 1000V 200A Fwd Super Fast Recovery
товару немає в наявності
В кошику
од. на суму грн.
| MUR2X100A10 |
|
Виробник: GeneSiC Semiconductor
Description: DIODE GEN PURP 1KV 100A SOT227
Description: DIODE GEN PURP 1KV 100A SOT227
товару немає в наявності
В кошику
од. на суму грн.
| MUR2X100A12 |
|
Виробник: GeneSiC Semiconductor
Discrete Semiconductor Modules 1200V 200A Fwd Super Fast Recovery
Discrete Semiconductor Modules 1200V 200A Fwd Super Fast Recovery
товару немає в наявності
В кошику
од. на суму грн.
| MUR2X100A12 |
|
Виробник: GeneSiC Semiconductor
Description: DIODE GEN PURP 1.2KV 100A SOT227
Description: DIODE GEN PURP 1.2KV 100A SOT227
товару немає в наявності
В кошику
од. на суму грн.
| MUR2X120A02 |
|
Виробник: GeneSiC Semiconductor
Discrete Semiconductor Modules 200V 240A Fwd Super Fast Recovery
Discrete Semiconductor Modules 200V 240A Fwd Super Fast Recovery
товару немає в наявності
В кошику
од. на суму грн.
| MUR2X120A02 |
|
Виробник: GeneSiC Semiconductor
Description: DIODE GEN PURP 200V 120A SOT227
Packaging: Bulk
Package / Case: SOT-227-4, miniBLOC
Mounting Type: Chassis Mount
Speed: Standard Recovery >500ns, > 200mA (Io)
Technology: Standard
Diode Configuration: 2 Independent
Current - Average Rectified (Io) (per Diode): 120A
Supplier Device Package: SOT-227
Operating Temperature - Junction: -55°C ~ 175°C
Part Status: Active
Voltage - DC Reverse (Vr) (Max): 200 V
Voltage - Forward (Vf) (Max) @ If: 1 V @ 120 A
Current - Reverse Leakage @ Vr: 25 µA @ 200 V
Description: DIODE GEN PURP 200V 120A SOT227
Packaging: Bulk
Package / Case: SOT-227-4, miniBLOC
Mounting Type: Chassis Mount
Speed: Standard Recovery >500ns, > 200mA (Io)
Technology: Standard
Diode Configuration: 2 Independent
Current - Average Rectified (Io) (per Diode): 120A
Supplier Device Package: SOT-227
Operating Temperature - Junction: -55°C ~ 175°C
Part Status: Active
Voltage - DC Reverse (Vr) (Max): 200 V
Voltage - Forward (Vf) (Max) @ If: 1 V @ 120 A
Current - Reverse Leakage @ Vr: 25 µA @ 200 V
товару немає в наявності
В кошику
од. на суму грн.
| MUR2X120A04 |
|
Виробник: GeneSiC Semiconductor
Description: DIODE GEN PURP 400V 120A SOT227
Description: DIODE GEN PURP 400V 120A SOT227
товару немає в наявності
В кошику
од. на суму грн.
| MUR2X120A04 |
|
Виробник: GeneSiC Semiconductor
Discrete Semiconductor Modules 400V 240A Fwd Super Fast Recovery
Discrete Semiconductor Modules 400V 240A Fwd Super Fast Recovery
товару немає в наявності
В кошику
од. на суму грн.
| MUR2X120A06 |
|
Виробник: GeneSiC Semiconductor
Description: DIODE GEN PURP 600V 120A SOT227
Packaging: Bulk
Package / Case: SOT-227-4, miniBLOC
Mounting Type: Chassis Mount
Speed: Standard Recovery >500ns, > 200mA (Io)
Technology: Standard
Diode Configuration: 2 Independent
Current - Average Rectified (Io) (per Diode): 120A
Supplier Device Package: SOT-227
Operating Temperature - Junction: -55°C ~ 175°C
Part Status: Active
Voltage - DC Reverse (Vr) (Max): 600 V
Voltage - Forward (Vf) (Max) @ If: 1.3 V @ 120 A
Current - Reverse Leakage @ Vr: 25 µA @ 600 V
Description: DIODE GEN PURP 600V 120A SOT227
Packaging: Bulk
Package / Case: SOT-227-4, miniBLOC
Mounting Type: Chassis Mount
Speed: Standard Recovery >500ns, > 200mA (Io)
Technology: Standard
Diode Configuration: 2 Independent
Current - Average Rectified (Io) (per Diode): 120A
Supplier Device Package: SOT-227
Operating Temperature - Junction: -55°C ~ 175°C
Part Status: Active
Voltage - DC Reverse (Vr) (Max): 600 V
Voltage - Forward (Vf) (Max) @ If: 1.3 V @ 120 A
Current - Reverse Leakage @ Vr: 25 µA @ 600 V
товару немає в наявності
В кошику
од. на суму грн.
| MUR2X120A06 |
|
Виробник: GeneSiC Semiconductor
Discrete Semiconductor Modules 600V 240A Fwd Super Fast Recovery
Discrete Semiconductor Modules 600V 240A Fwd Super Fast Recovery
товару немає в наявності
В кошику
од. на суму грн.
| MUR2X120A10 |
|
Виробник: GeneSiC Semiconductor
Discrete Semiconductor Modules 1000V 240A Fwd Super Fast Recovery
Discrete Semiconductor Modules 1000V 240A Fwd Super Fast Recovery
товару немає в наявності
В кошику
од. на суму грн.
| MUR2X120A10 |
|
Виробник: GeneSiC Semiconductor
Description: DIODE MOD GP 1000V 120A SOT-227
Packaging: Bulk
Package / Case: SOT-227-4, miniBLOC
Mounting Type: Chassis Mount
Speed: Standard Recovery >500ns, > 200mA (Io)
Technology: Standard
Diode Configuration: 2 Independent
Current - Average Rectified (Io) (per Diode): 120A
Supplier Device Package: SOT-227
Operating Temperature - Junction: -55°C ~ 175°C
Part Status: Active
Voltage - DC Reverse (Vr) (Max): 1000 V
Voltage - Forward (Vf) (Max) @ If: 2.35 V @ 120 A
Current - Reverse Leakage @ Vr: 25 µA @ 1000 V
Description: DIODE MOD GP 1000V 120A SOT-227
Packaging: Bulk
Package / Case: SOT-227-4, miniBLOC
Mounting Type: Chassis Mount
Speed: Standard Recovery >500ns, > 200mA (Io)
Technology: Standard
Diode Configuration: 2 Independent
Current - Average Rectified (Io) (per Diode): 120A
Supplier Device Package: SOT-227
Operating Temperature - Junction: -55°C ~ 175°C
Part Status: Active
Voltage - DC Reverse (Vr) (Max): 1000 V
Voltage - Forward (Vf) (Max) @ If: 2.35 V @ 120 A
Current - Reverse Leakage @ Vr: 25 µA @ 1000 V
товару немає в наявності
В кошику
од. на суму грн.
| MUR2X120A12 |
|
Виробник: GeneSiC Semiconductor
Discrete Semiconductor Modules 1200V 240A Fwd Super Fast Recovery
Discrete Semiconductor Modules 1200V 240A Fwd Super Fast Recovery
товару немає в наявності
В кошику
од. на суму грн.
| MUR2X120A12 |
|
Виробник: GeneSiC Semiconductor
Description: DIODE GEN PURP 1.2KV 120A SOT227
Description: DIODE GEN PURP 1.2KV 120A SOT227
товару немає в наявності
В кошику
од. на суму грн.
| MUR30005CT |
|
Виробник: GeneSiC Semiconductor
Rectifiers 50V 300A Super Fast Recovery
Rectifiers 50V 300A Super Fast Recovery
товару немає в наявності
В кошику
од. на суму грн.
| MUR30005CT |
|
Виробник: GeneSiC Semiconductor
Description: DIODE MODULE GP 50V 150A 2TOWER
Packaging: Bulk
Package / Case: Twin Tower
Mounting Type: Chassis Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 90 ns
Technology: Standard
Diode Configuration: 1 Pair Common Cathode
Current - Average Rectified (Io) (per Diode): 150A
Supplier Device Package: Twin Tower
Operating Temperature - Junction: -55°C ~ 150°C
Voltage - DC Reverse (Vr) (Max): 50 V
Voltage - Forward (Vf) (Max) @ If: 1.3 V @ 100 A
Current - Reverse Leakage @ Vr: 25 µA @ 50 V
Description: DIODE MODULE GP 50V 150A 2TOWER
Packaging: Bulk
Package / Case: Twin Tower
Mounting Type: Chassis Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 90 ns
Technology: Standard
Diode Configuration: 1 Pair Common Cathode
Current - Average Rectified (Io) (per Diode): 150A
Supplier Device Package: Twin Tower
Operating Temperature - Junction: -55°C ~ 150°C
Voltage - DC Reverse (Vr) (Max): 50 V
Voltage - Forward (Vf) (Max) @ If: 1.3 V @ 100 A
Current - Reverse Leakage @ Vr: 25 µA @ 50 V
товару немає в наявності
В кошику
од. на суму грн.
| MUR30005CTR |
|
Виробник: GeneSiC Semiconductor
Rectifiers 50V 300A Super Fast Recovery
Rectifiers 50V 300A Super Fast Recovery
товару немає в наявності
В кошику
од. на суму грн.
| MUR30005CTR |
|
Виробник: GeneSiC Semiconductor
Description: DIODE MODULE GP 50V 150A 2TOWER
Packaging: Bulk
Package / Case: Twin Tower
Mounting Type: Chassis Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 90 ns
Technology: Standard
Diode Configuration: 1 Pair Common Anode
Current - Average Rectified (Io) (per Diode): 150A
Supplier Device Package: Twin Tower
Operating Temperature - Junction: -55°C ~ 150°C
Voltage - DC Reverse (Vr) (Max): 50 V
Voltage - Forward (Vf) (Max) @ If: 1.3 V @ 100 A
Current - Reverse Leakage @ Vr: 25 µA @ 50 V
Description: DIODE MODULE GP 50V 150A 2TOWER
Packaging: Bulk
Package / Case: Twin Tower
Mounting Type: Chassis Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 90 ns
Technology: Standard
Diode Configuration: 1 Pair Common Anode
Current - Average Rectified (Io) (per Diode): 150A
Supplier Device Package: Twin Tower
Operating Temperature - Junction: -55°C ~ 150°C
Voltage - DC Reverse (Vr) (Max): 50 V
Voltage - Forward (Vf) (Max) @ If: 1.3 V @ 100 A
Current - Reverse Leakage @ Vr: 25 µA @ 50 V
товару немає в наявності
В кошику
од. на суму грн.
| MUR30010CT |
|
Виробник: GeneSiC Semiconductor
Diode Modules 100V 300A Super Fast Recovery
Diode Modules 100V 300A Super Fast Recovery
товару немає в наявності
В кошику
од. на суму грн.
| MUR30010CT |
|
Виробник: GeneSiC Semiconductor
Description: DIODE MODULE GP 100V 150A 2TOWER
Packaging: Bulk
Package / Case: Twin Tower
Mounting Type: Chassis Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 90 ns
Technology: Standard
Diode Configuration: 1 Pair Common Cathode
Current - Average Rectified (Io) (per Diode): 150A
Supplier Device Package: Twin Tower
Operating Temperature - Junction: -55°C ~ 150°C
Voltage - DC Reverse (Vr) (Max): 100 V
Voltage - Forward (Vf) (Max) @ If: 1.3 V @ 100 A
Current - Reverse Leakage @ Vr: 25 µA @ 50 V
Description: DIODE MODULE GP 100V 150A 2TOWER
Packaging: Bulk
Package / Case: Twin Tower
Mounting Type: Chassis Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 90 ns
Technology: Standard
Diode Configuration: 1 Pair Common Cathode
Current - Average Rectified (Io) (per Diode): 150A
Supplier Device Package: Twin Tower
Operating Temperature - Junction: -55°C ~ 150°C
Voltage - DC Reverse (Vr) (Max): 100 V
Voltage - Forward (Vf) (Max) @ If: 1.3 V @ 100 A
Current - Reverse Leakage @ Vr: 25 µA @ 50 V
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| MUR30010CTR |
|
Виробник: GeneSiC Semiconductor
Description: DIODE MODULE GP 100V 150A 2TOWER
Packaging: Bulk
Package / Case: Twin Tower
Mounting Type: Chassis Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 90 ns
Technology: Standard
Diode Configuration: 1 Pair Common Anode
Current - Average Rectified (Io) (per Diode): 150A
Supplier Device Package: Twin Tower
Operating Temperature - Junction: -55°C ~ 150°C
Voltage - DC Reverse (Vr) (Max): 100 V
Voltage - Forward (Vf) (Max) @ If: 1.3 V @ 100 A
Current - Reverse Leakage @ Vr: 25 µA @ 50 V
Description: DIODE MODULE GP 100V 150A 2TOWER
Packaging: Bulk
Package / Case: Twin Tower
Mounting Type: Chassis Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 90 ns
Technology: Standard
Diode Configuration: 1 Pair Common Anode
Current - Average Rectified (Io) (per Diode): 150A
Supplier Device Package: Twin Tower
Operating Temperature - Junction: -55°C ~ 150°C
Voltage - DC Reverse (Vr) (Max): 100 V
Voltage - Forward (Vf) (Max) @ If: 1.3 V @ 100 A
Current - Reverse Leakage @ Vr: 25 µA @ 50 V
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од. на суму грн.
| MUR30010CTR |
|
Виробник: GeneSiC Semiconductor
Diode Modules 100V 300A Super Fast Recovery
Diode Modules 100V 300A Super Fast Recovery
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од. на суму грн.
| MUR30020CT |
|
Виробник: GeneSiC Semiconductor
Description: DIODE MODULE GP 200V 150A 2TOWER
Packaging: Bulk
Package / Case: Twin Tower
Mounting Type: Chassis Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 90 ns
Technology: Standard
Diode Configuration: 1 Pair Common Cathode
Current - Average Rectified (Io) (per Diode): 150A
Supplier Device Package: Twin Tower
Operating Temperature - Junction: -55°C ~ 150°C
Voltage - DC Reverse (Vr) (Max): 200 V
Voltage - Forward (Vf) (Max) @ If: 1.3 V @ 100 A
Current - Reverse Leakage @ Vr: 25 µA @ 50 V
Description: DIODE MODULE GP 200V 150A 2TOWER
Packaging: Bulk
Package / Case: Twin Tower
Mounting Type: Chassis Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 90 ns
Technology: Standard
Diode Configuration: 1 Pair Common Cathode
Current - Average Rectified (Io) (per Diode): 150A
Supplier Device Package: Twin Tower
Operating Temperature - Junction: -55°C ~ 150°C
Voltage - DC Reverse (Vr) (Max): 200 V
Voltage - Forward (Vf) (Max) @ If: 1.3 V @ 100 A
Current - Reverse Leakage @ Vr: 25 µA @ 50 V
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од. на суму грн.
| MUR30020CT |
|
Виробник: GeneSiC Semiconductor
Diode Modules SI S-FST RECOV 2TWR 50-600V300A200P/141R
Diode Modules SI S-FST RECOV 2TWR 50-600V300A200P/141R
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од. на суму грн.
| MUR30020CTR |
|
Виробник: GeneSiC Semiconductor
Diode Modules SI S-FST RECOV 2TWR 50-600V300A200P/141R
Diode Modules SI S-FST RECOV 2TWR 50-600V300A200P/141R
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В кошику
од. на суму грн.
| MUR30020CTR |
|
Виробник: GeneSiC Semiconductor
Description: DIODE MODULE GP 200V 150A 2TOWER
Packaging: Bulk
Package / Case: Twin Tower
Mounting Type: Chassis Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 90 ns
Technology: Standard
Diode Configuration: 1 Pair Common Anode
Current - Average Rectified (Io) (per Diode): 150A
Supplier Device Package: Twin Tower
Operating Temperature - Junction: -55°C ~ 150°C
Voltage - DC Reverse (Vr) (Max): 200 V
Voltage - Forward (Vf) (Max) @ If: 1.3 V @ 100 A
Current - Reverse Leakage @ Vr: 25 µA @ 50 V
Description: DIODE MODULE GP 200V 150A 2TOWER
Packaging: Bulk
Package / Case: Twin Tower
Mounting Type: Chassis Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 90 ns
Technology: Standard
Diode Configuration: 1 Pair Common Anode
Current - Average Rectified (Io) (per Diode): 150A
Supplier Device Package: Twin Tower
Operating Temperature - Junction: -55°C ~ 150°C
Voltage - DC Reverse (Vr) (Max): 200 V
Voltage - Forward (Vf) (Max) @ If: 1.3 V @ 100 A
Current - Reverse Leakage @ Vr: 25 µA @ 50 V
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од. на суму грн.
| MUR30040CT |
|
Виробник: GeneSiC Semiconductor
Diode Modules SI S-FST RECOV 2TWR 50-600V300A400P/280R
Diode Modules SI S-FST RECOV 2TWR 50-600V300A400P/280R
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В кошику
од. на суму грн.
| MUR30040CT |
|
Виробник: GeneSiC Semiconductor
Description: DIODE MODULE GP 400V 150A 2TOWER
Packaging: Bulk
Package / Case: Twin Tower
Mounting Type: Chassis Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 90 ns
Technology: Standard
Diode Configuration: 1 Pair Common Cathode
Current - Average Rectified (Io) (per Diode): 150A
Supplier Device Package: Twin Tower
Operating Temperature - Junction: -55°C ~ 150°C
Voltage - DC Reverse (Vr) (Max): 400 V
Voltage - Forward (Vf) (Max) @ If: 1.5 V @ 100 A
Current - Reverse Leakage @ Vr: 25 µA @ 50 V
Description: DIODE MODULE GP 400V 150A 2TOWER
Packaging: Bulk
Package / Case: Twin Tower
Mounting Type: Chassis Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 90 ns
Technology: Standard
Diode Configuration: 1 Pair Common Cathode
Current - Average Rectified (Io) (per Diode): 150A
Supplier Device Package: Twin Tower
Operating Temperature - Junction: -55°C ~ 150°C
Voltage - DC Reverse (Vr) (Max): 400 V
Voltage - Forward (Vf) (Max) @ If: 1.5 V @ 100 A
Current - Reverse Leakage @ Vr: 25 µA @ 50 V
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В кошику
од. на суму грн.
| MUR30040CTR |
|
Виробник: GeneSiC Semiconductor
Description: DIODE MODULE GP 400V 150A 2TOWER
Packaging: Bulk
Package / Case: Twin Tower
Mounting Type: Chassis Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 90 ns
Technology: Standard
Diode Configuration: 1 Pair Common Anode
Current - Average Rectified (Io) (per Diode): 150A
Supplier Device Package: Twin Tower
Operating Temperature - Junction: -55°C ~ 150°C
Voltage - DC Reverse (Vr) (Max): 400 V
Voltage - Forward (Vf) (Max) @ If: 1.5 V @ 100 A
Current - Reverse Leakage @ Vr: 25 µA @ 50 V
Description: DIODE MODULE GP 400V 150A 2TOWER
Packaging: Bulk
Package / Case: Twin Tower
Mounting Type: Chassis Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 90 ns
Technology: Standard
Diode Configuration: 1 Pair Common Anode
Current - Average Rectified (Io) (per Diode): 150A
Supplier Device Package: Twin Tower
Operating Temperature - Junction: -55°C ~ 150°C
Voltage - DC Reverse (Vr) (Max): 400 V
Voltage - Forward (Vf) (Max) @ If: 1.5 V @ 100 A
Current - Reverse Leakage @ Vr: 25 µA @ 50 V
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В кошику
од. на суму грн.
| MUR30040CTR |
|
Виробник: GeneSiC Semiconductor
Diode Modules SI S-FST RECOV 2TWR 50-600V300A400P/280R
Diode Modules SI S-FST RECOV 2TWR 50-600V300A400P/280R
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В кошику
од. на суму грн.
| MUR30060CT |
|
Виробник: GeneSiC Semiconductor
Description: DIODE MODULE GP 600V 150A 2TOWER
Packaging: Bulk
Package / Case: Twin Tower
Mounting Type: Chassis Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 90 ns
Technology: Standard
Diode Configuration: 1 Pair Common Cathode
Current - Average Rectified (Io) (per Diode): 150A
Supplier Device Package: Twin Tower
Operating Temperature - Junction: -55°C ~ 150°C
Voltage - DC Reverse (Vr) (Max): 600 V
Voltage - Forward (Vf) (Max) @ If: 1.7 V @ 100 A
Current - Reverse Leakage @ Vr: 25 µA @ 50 V
Description: DIODE MODULE GP 600V 150A 2TOWER
Packaging: Bulk
Package / Case: Twin Tower
Mounting Type: Chassis Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 90 ns
Technology: Standard
Diode Configuration: 1 Pair Common Cathode
Current - Average Rectified (Io) (per Diode): 150A
Supplier Device Package: Twin Tower
Operating Temperature - Junction: -55°C ~ 150°C
Voltage - DC Reverse (Vr) (Max): 600 V
Voltage - Forward (Vf) (Max) @ If: 1.7 V @ 100 A
Current - Reverse Leakage @ Vr: 25 µA @ 50 V
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В кошику
од. на суму грн.
| MUR30060CT |
|
Виробник: GeneSiC Semiconductor
Diode Modules SI S-FST RECOV 2TWR 50-600V300A600P/420R
Diode Modules SI S-FST RECOV 2TWR 50-600V300A600P/420R
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В кошику
од. на суму грн.
| MUR30060CTR |
|
Виробник: GeneSiC Semiconductor
Diode Modules SI S-FST RECOV 2TWR 50-600V300A600P/420R
Diode Modules SI S-FST RECOV 2TWR 50-600V300A600P/420R
товару немає в наявності
В кошику
од. на суму грн.
| MUR30060CTR |
|
Виробник: GeneSiC Semiconductor
Description: DIODE MODULE GP 600V 150A 2TOWER
Packaging: Bulk
Package / Case: Twin Tower
Mounting Type: Chassis Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 90 ns
Technology: Standard
Diode Configuration: 1 Pair Common Anode
Current - Average Rectified (Io) (per Diode): 150A
Supplier Device Package: Twin Tower
Operating Temperature - Junction: -55°C ~ 150°C
Voltage - DC Reverse (Vr) (Max): 600 V
Voltage - Forward (Vf) (Max) @ If: 1.7 V @ 100 A
Current - Reverse Leakage @ Vr: 25 µA @ 50 V
Description: DIODE MODULE GP 600V 150A 2TOWER
Packaging: Bulk
Package / Case: Twin Tower
Mounting Type: Chassis Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 90 ns
Technology: Standard
Diode Configuration: 1 Pair Common Anode
Current - Average Rectified (Io) (per Diode): 150A
Supplier Device Package: Twin Tower
Operating Temperature - Junction: -55°C ~ 150°C
Voltage - DC Reverse (Vr) (Max): 600 V
Voltage - Forward (Vf) (Max) @ If: 1.7 V @ 100 A
Current - Reverse Leakage @ Vr: 25 µA @ 50 V
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В кошику
од. на суму грн.
| MUR40005CT |
|
Виробник: GeneSiC Semiconductor
Diode Modules SI S-FST RECOV 2TWR 50-600V 400A 50P/35R
Diode Modules SI S-FST RECOV 2TWR 50-600V 400A 50P/35R
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В кошику
од. на суму грн.
| MUR40005CT |
|
Виробник: GeneSiC Semiconductor
Description: DIODE MODULE GP 50V 200A 2TOWER
Packaging: Bulk
Package / Case: Twin Tower
Mounting Type: Chassis Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 90 ns
Technology: Standard
Diode Configuration: 1 Pair Common Cathode
Current - Average Rectified (Io) (per Diode): 200A
Supplier Device Package: Twin Tower
Operating Temperature - Junction: -55°C ~ 150°C
Part Status: Obsolete
Voltage - DC Reverse (Vr) (Max): 50 V
Voltage - Forward (Vf) (Max) @ If: 1.3 V @ 125 A
Current - Reverse Leakage @ Vr: 25 µA @ 50 V
Description: DIODE MODULE GP 50V 200A 2TOWER
Packaging: Bulk
Package / Case: Twin Tower
Mounting Type: Chassis Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 90 ns
Technology: Standard
Diode Configuration: 1 Pair Common Cathode
Current - Average Rectified (Io) (per Diode): 200A
Supplier Device Package: Twin Tower
Operating Temperature - Junction: -55°C ~ 150°C
Part Status: Obsolete
Voltage - DC Reverse (Vr) (Max): 50 V
Voltage - Forward (Vf) (Max) @ If: 1.3 V @ 125 A
Current - Reverse Leakage @ Vr: 25 µA @ 50 V
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В кошику
од. на суму грн.
| MUR40005CTR |
|
Виробник: GeneSiC Semiconductor
Diode Modules SI S-FST RECOV 2TWR 50-600V 400A 50P/35R
Diode Modules SI S-FST RECOV 2TWR 50-600V 400A 50P/35R
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В кошику
од. на суму грн.
| MUR40005CTR |
|
Виробник: GeneSiC Semiconductor
Description: DIODE MODULE GP 50V 200A 2TOWER
Packaging: Bulk
Package / Case: Twin Tower
Mounting Type: Chassis Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 90 ns
Technology: Standard
Diode Configuration: 1 Pair Common Anode
Current - Average Rectified (Io) (per Diode): 200A
Supplier Device Package: Twin Tower
Operating Temperature - Junction: -55°C ~ 150°C
Part Status: Obsolete
Voltage - DC Reverse (Vr) (Max): 50 V
Voltage - Forward (Vf) (Max) @ If: 1.3 V @ 125 A
Current - Reverse Leakage @ Vr: 25 µA @ 50 V
Description: DIODE MODULE GP 50V 200A 2TOWER
Packaging: Bulk
Package / Case: Twin Tower
Mounting Type: Chassis Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 90 ns
Technology: Standard
Diode Configuration: 1 Pair Common Anode
Current - Average Rectified (Io) (per Diode): 200A
Supplier Device Package: Twin Tower
Operating Temperature - Junction: -55°C ~ 150°C
Part Status: Obsolete
Voltage - DC Reverse (Vr) (Max): 50 V
Voltage - Forward (Vf) (Max) @ If: 1.3 V @ 125 A
Current - Reverse Leakage @ Vr: 25 µA @ 50 V
товару немає в наявності
В кошику
од. на суму грн.
| MUR40010CT |
|
Виробник: GeneSiC Semiconductor
Description: DIODE MODULE GP 100V 200A 2TOWER
Packaging: Bulk
Package / Case: Twin Tower
Mounting Type: Chassis Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 90 ns
Technology: Standard
Diode Configuration: 1 Pair Common Cathode
Current - Average Rectified (Io) (per Diode): 200A
Supplier Device Package: Twin Tower
Part Status: Active
Voltage - DC Reverse (Vr) (Max): 100 V
Voltage - Forward (Vf) (Max) @ If: 1.3 V @ 125 A
Current - Reverse Leakage @ Vr: 25 µA @ 50 V
Description: DIODE MODULE GP 100V 200A 2TOWER
Packaging: Bulk
Package / Case: Twin Tower
Mounting Type: Chassis Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 90 ns
Technology: Standard
Diode Configuration: 1 Pair Common Cathode
Current - Average Rectified (Io) (per Diode): 200A
Supplier Device Package: Twin Tower
Part Status: Active
Voltage - DC Reverse (Vr) (Max): 100 V
Voltage - Forward (Vf) (Max) @ If: 1.3 V @ 125 A
Current - Reverse Leakage @ Vr: 25 µA @ 50 V
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В кошику
од. на суму грн.
| MUR40010CT |
|
Виробник: GeneSiC Semiconductor
Diode Modules SI S-FST RECOV 2TWR 50-600V 400A100P/70R
Diode Modules SI S-FST RECOV 2TWR 50-600V 400A100P/70R
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В кошику
од. на суму грн.