Продукція > GENESIC SEMICONDUCTOR > Всі товари виробника GENESIC SEMICONDUCTOR (4204) > Сторінка 58 з 71
| Фото | Назва | Виробник | Інформація |
Доступність |
Ціна |
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MUR10010CTR | GeneSiC Semiconductor |
 Diode Modules SI S-FST RECOV 2TWR 50-600V 100A100P/70R |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||||
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MUR10020CT | GeneSiC Semiconductor |
Diode Modules SI S-FST RECOV 2TWR 50-600V100A200P/140R |
на замовлення 20 шт: термін постачання 21-30 дні (днів) |
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| MUR10020CT | GeneSiC Semiconductor |
Description: DIODE MODULE GP 200V 50A 2TOWER Packaging: Bulk Package / Case: Twin Tower Mounting Type: Chassis Mount Speed: Fast Recovery =< 500ns, > 200mA (Io) Reverse Recovery Time (trr): 75 ns Technology: Standard Diode Configuration: 1 Pair Common Cathode Current - Average Rectified (Io) (per Diode): 50A Supplier Device Package: Twin Tower Operating Temperature - Junction: -55°C ~ 150°C Voltage - DC Reverse (Vr) (Max): 200 V Voltage - Forward (Vf) (Max) @ If: 1.3 V @ 50 A Current - Reverse Leakage @ Vr: 25 µA @ 50 V |
товару немає в наявності |
В кошику од. на суму грн. | |||||||||||
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MUR10020CT | GeneSiC Semiconductor |
Diode Switching 200V 100A 3-Pin Twin Tower |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||||
| MUR10020CTR | GeneSiC Semiconductor |
Description: DIODE MODULE GP 200V 50A 2TOWER Packaging: Bulk Package / Case: Twin Tower Mounting Type: Chassis Mount Speed: Fast Recovery =< 500ns, > 200mA (Io) Reverse Recovery Time (trr): 75 ns Technology: Standard Diode Configuration: 1 Pair Common Anode Current - Average Rectified (Io) (per Diode): 50A Supplier Device Package: Twin Tower Operating Temperature - Junction: -55°C ~ 150°C Voltage - DC Reverse (Vr) (Max): 200 V Voltage - Forward (Vf) (Max) @ If: 1.3 V @ 50 A Current - Reverse Leakage @ Vr: 25 µA @ 50 V |
товару немає в наявності |
В кошику од. на суму грн. | |||||||||||
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MUR10020CTR | GeneSiC Semiconductor |
Diode Modules SI S-FST RECOV 2TWR 50-600V100A200P/140R |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||||
| MUR10040CT | GeneSiC Semiconductor |
Description: DIODE MODULE GP 400V 50A 2TOWER Packaging: Bulk Package / Case: Twin Tower Mounting Type: Chassis Mount Speed: Fast Recovery =< 500ns, > 200mA (Io) Reverse Recovery Time (trr): 90 ns Technology: Standard Diode Configuration: 1 Pair Common Cathode Current - Average Rectified (Io) (per Diode): 50A Supplier Device Package: Twin Tower Operating Temperature - Junction: -55°C ~ 150°C Voltage - DC Reverse (Vr) (Max): 400 V Voltage - Forward (Vf) (Max) @ If: 1.3 V @ 50 A Current - Reverse Leakage @ Vr: 25 µA @ 50 V |
товару немає в наявності |
В кошику од. на суму грн. | |||||||||||
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MUR10040CT | GeneSiC Semiconductor |
Diode Modules SI S-FST RECOV 2TWR 50-600V100A400P/280R |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||||
| MUR10040CTR | GeneSiC Semiconductor |
Description: DIODE MODULE GP 400V 50A 2TOWER Packaging: Bulk Package / Case: Twin Tower Mounting Type: Chassis Mount Speed: Fast Recovery =< 500ns, > 200mA (Io) Reverse Recovery Time (trr): 90 ns Technology: Standard Diode Configuration: 1 Pair Common Anode Current - Average Rectified (Io) (per Diode): 50A Supplier Device Package: Twin Tower Operating Temperature - Junction: -55°C ~ 150°C Voltage - DC Reverse (Vr) (Max): 400 V Voltage - Forward (Vf) (Max) @ If: 1.3 V @ 50 A Current - Reverse Leakage @ Vr: 25 µA @ 50 V |
товару немає в наявності |
В кошику од. на суму грн. | |||||||||||
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MUR10040CTR | GeneSiC Semiconductor |
Diode Modules SI S-FST RECOV 2TWR 50-600V100A400P/280R |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||||
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MUR10060CT | GeneSiC Semiconductor |
Rectifiers SI S-FST RECOV 2TWR 50-600V100A600P/420R |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||||
| MUR10060CT | GeneSiC Semiconductor |
Description: DIODE MODULE GP 600V 50A 2TOWER Packaging: Bulk Package / Case: Twin Tower Mounting Type: Chassis Mount Speed: Fast Recovery =< 500ns, > 200mA (Io) Reverse Recovery Time (trr): 110 ns Technology: Standard Diode Configuration: 1 Pair Common Cathode Current - Average Rectified (Io) (per Diode): 50A Supplier Device Package: Twin Tower Operating Temperature - Junction: -55°C ~ 150°C Voltage - DC Reverse (Vr) (Max): 600 V Voltage - Forward (Vf) (Max) @ If: 1.7 V @ 50 A Current - Reverse Leakage @ Vr: 25 µA @ 50 V |
товару немає в наявності |
В кошику од. на суму грн. | |||||||||||
| MUR10060CTR | GeneSiC Semiconductor |
Description: DIODE MODULE GP 600V 50A 2TOWER Packaging: Bulk Package / Case: Twin Tower Mounting Type: Chassis Mount Speed: Fast Recovery =< 500ns, > 200mA (Io) Reverse Recovery Time (trr): 110 ns Technology: Standard Diode Configuration: 1 Pair Common Anode Current - Average Rectified (Io) (per Diode): 50A Supplier Device Package: Twin Tower Operating Temperature - Junction: -55°C ~ 150°C Voltage - DC Reverse (Vr) (Max): 600 V Voltage - Forward (Vf) (Max) @ If: 1.7 V @ 50 A Current - Reverse Leakage @ Vr: 25 µA @ 50 V |
товару немає в наявності |
В кошику од. на суму грн. | |||||||||||
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MUR10060CTR | GeneSiC Semiconductor |
Rectifiers SI S-FST RECOV 2TWR 50-600V100A600P/420R |
на замовлення 6 шт: термін постачання 21-30 дні (днів) |
В кошику од. на суму грн. | ||||||||||
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MUR20005CT | GeneSiC Semiconductor |
Diode Modules SI S-FST RECOV 2TWR 50-600V 200A 50P/35R |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||||
| MUR20005CT | GeneSiC Semiconductor |
Description: DIODE MODULE GP 50V 100A 2TOWER Packaging: Bulk Package / Case: Twin Tower Mounting Type: Chassis Mount Speed: Fast Recovery =< 500ns, > 200mA (Io) Reverse Recovery Time (trr): 75 ns Technology: Standard Diode Configuration: 1 Pair Common Cathode Current - Average Rectified (Io) (per Diode): 100A Supplier Device Package: Twin Tower Operating Temperature - Junction: -55°C ~ 150°C Part Status: Obsolete Voltage - DC Reverse (Vr) (Max): 50 V Voltage - Forward (Vf) (Max) @ If: 1.3 V @ 100 A Current - Reverse Leakage @ Vr: 25 µA @ 50 V |
товару немає в наявності |
В кошику од. на суму грн. | |||||||||||
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MUR20005CTR | GeneSiC Semiconductor |
Diode Modules SI S-FST RECOV 2TWR 50-600V 200A 50P/35R |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||||
| MUR20005CTR | GeneSiC Semiconductor |
Description: DIODE MODULE GP 50V 100A 2TOWER Packaging: Bulk Package / Case: Twin Tower Mounting Type: Chassis Mount Speed: Fast Recovery =< 500ns, > 200mA (Io) Reverse Recovery Time (trr): 75 ns Technology: Standard Diode Configuration: 1 Pair Common Anode Current - Average Rectified (Io) (per Diode): 100A Supplier Device Package: Twin Tower Operating Temperature - Junction: -55°C ~ 150°C Part Status: Obsolete Voltage - DC Reverse (Vr) (Max): 50 V Voltage - Forward (Vf) (Max) @ If: 1.3 V @ 100 A Current - Reverse Leakage @ Vr: 25 µA @ 50 V |
товару немає в наявності |
В кошику од. на суму грн. | |||||||||||
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MUR20010CT | GeneSiC Semiconductor |
Description: DIODE MODULE GP 100V 100A 2TOWER Packaging: Bulk Package / Case: Twin Tower Mounting Type: Chassis Mount Speed: Fast Recovery =< 500ns, > 200mA (Io) Reverse Recovery Time (trr): 75 ns Technology: Standard Diode Configuration: 1 Pair Common Cathode Current - Average Rectified (Io) (per Diode): 100A Supplier Device Package: Twin Tower Operating Temperature - Junction: -55°C ~ 150°C Part Status: Active Voltage - DC Reverse (Vr) (Max): 100 V Voltage - Forward (Vf) (Max) @ If: 1.3 V @ 100 A Current - Reverse Leakage @ Vr: 25 µA @ 50 V |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||||
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MUR20010CT | GeneSiC Semiconductor |
Diode Modules 100V 200A Super Fast Recovery |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||||
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MUR20010CTR | GeneSiC Semiconductor |
Description: DIODE MODULE GP 100V 100A 2TOWER Packaging: Bulk Package / Case: Twin Tower Mounting Type: Chassis Mount Speed: Fast Recovery =< 500ns, > 200mA (Io) Reverse Recovery Time (trr): 75 ns Technology: Standard Diode Configuration: 1 Pair Common Anode Current - Average Rectified (Io) (per Diode): 100A Supplier Device Package: Twin Tower Operating Temperature - Junction: -55°C ~ 150°C Part Status: Active Voltage - DC Reverse (Vr) (Max): 100 V Voltage - Forward (Vf) (Max) @ If: 1.3 V @ 100 A Current - Reverse Leakage @ Vr: 25 µA @ 50 V |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||||
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MUR20010CTR | GeneSiC Semiconductor |
Diode Modules 100V 200A Super Fast Recovery |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||||
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MUR20020CT | GeneSiC Semiconductor |
Diode Modules 200V 200A Super Fast Recovery |
на замовлення 27 шт: термін постачання 21-30 дні (днів) |
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| MUR20020CT | GeneSiC Semiconductor |
Description: DIODE MODULE GP 200V 100A 2TOWER Packaging: Bulk Package / Case: Twin Tower Mounting Type: Chassis Mount Speed: Fast Recovery =< 500ns, > 200mA (Io) Reverse Recovery Time (trr): 75 ns Technology: Standard Diode Configuration: 1 Pair Common Cathode Current - Average Rectified (Io) (per Diode): 100A Supplier Device Package: Twin Tower Operating Temperature - Junction: -55°C ~ 150°C Part Status: Active Voltage - DC Reverse (Vr) (Max): 200 V Voltage - Forward (Vf) (Max) @ If: 1.3 V @ 100 A Current - Reverse Leakage @ Vr: 25 µA @ 50 V |
на замовлення 48 шт: термін постачання 21-31 дні (днів) |
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MUR20020CT | GeneSiC Semiconductor |
Diode Switching 200V 200A 3-Pin Twin Tower |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||||
| MUR20020CTR | GeneSiC Semiconductor |
Description: DIODE MODULE GP 200V 100A 2TOWER Packaging: Bulk Package / Case: Twin Tower Mounting Type: Chassis Mount Speed: Fast Recovery =< 500ns, > 200mA (Io) Reverse Recovery Time (trr): 75 ns Technology: Standard Diode Configuration: 1 Pair Common Anode Current - Average Rectified (Io) (per Diode): 100A Supplier Device Package: Twin Tower Operating Temperature - Junction: -55°C ~ 150°C Part Status: Active Voltage - DC Reverse (Vr) (Max): 200 V Voltage - Forward (Vf) (Max) @ If: 1.3 V @ 100 A Current - Reverse Leakage @ Vr: 25 µA @ 50 V |
товару немає в наявності |
В кошику од. на суму грн. | |||||||||||
 |
MUR20020CTR | GeneSiC Semiconductor |
Diode Modules 200V 200A Super Fast Recovery |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||||
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MUR20040CT | GeneSiC Semiconductor |
Diode Switching 400V 200A 3-Pin Twin Tower |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||||
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MUR20040CT | GeneSiC Semiconductor |
Diode Modules 400V 200A Super Fast Recovery |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||||
| MUR20040CT | GeneSiC Semiconductor |
Description: DIODE MODULE GP 400V 100A 2TOWER Packaging: Bulk Package / Case: Twin Tower Mounting Type: Chassis Mount Speed: Fast Recovery =< 500ns, > 200mA (Io) Reverse Recovery Time (trr): 90 ns Technology: Standard Diode Configuration: 1 Pair Common Cathode Current - Average Rectified (Io) (per Diode): 100A Supplier Device Package: Twin Tower Operating Temperature - Junction: -55°C ~ 150°C Part Status: Active Voltage - DC Reverse (Vr) (Max): 400 V Voltage - Forward (Vf) (Max) @ If: 1.3 V @ 50 A Current - Reverse Leakage @ Vr: 25 µA @ 50 V |
товару немає в наявності |
В кошику од. на суму грн. | |||||||||||
| MUR20040CTR | GeneSiC Semiconductor |
Description: DIODE MODULE GP 400V 100A 2TOWER Packaging: Bulk Package / Case: Twin Tower Mounting Type: Chassis Mount Speed: Fast Recovery =< 500ns, > 200mA (Io) Reverse Recovery Time (trr): 90 ns Technology: Standard Diode Configuration: 1 Pair Common Anode Current - Average Rectified (Io) (per Diode): 100A Supplier Device Package: Twin Tower Operating Temperature - Junction: -55°C ~ 150°C Part Status: Active Voltage - DC Reverse (Vr) (Max): 400 V Voltage - Forward (Vf) (Max) @ If: 1.3 V @ 50 A Current - Reverse Leakage @ Vr: 25 µA @ 50 V |
товару немає в наявності |
В кошику од. на суму грн. | |||||||||||
 |
MUR20040CTR | GeneSiC Semiconductor |
Diode Modules 400V 200A Super Fast Recovery |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||||
| MUR20060CT | GeneSiC Semiconductor |
Description: DIODE MODULE GP 600V 100A 2TOWER Packaging: Bulk Package / Case: Twin Tower Mounting Type: Chassis Mount Speed: Fast Recovery =< 500ns, > 200mA (Io) Reverse Recovery Time (trr): 110 ns Technology: Standard Diode Configuration: 1 Pair Common Cathode Current - Average Rectified (Io) (per Diode): 100A Supplier Device Package: Twin Tower Operating Temperature - Junction: -55°C ~ 150°C Part Status: Active Voltage - DC Reverse (Vr) (Max): 600 V Voltage - Forward (Vf) (Max) @ If: 1.7 V @ 50 A Current - Reverse Leakage @ Vr: 25 µA @ 50 V |
товару немає в наявності |
В кошику од. на суму грн. | |||||||||||
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MUR20060CT | GeneSiC Semiconductor |
Diode Modules SI S-FST RECOV 2TWR 50-600V200A600P/420R |
на замовлення 7 шт: термін постачання 21-30 дні (днів) |
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| MUR20060CTR | GeneSiC Semiconductor |
Description: DIODE MODULE GP 600V 100A 2TOWER Packaging: Bulk Package / Case: Twin Tower Mounting Type: Chassis Mount Speed: Fast Recovery =< 500ns, > 200mA (Io) Reverse Recovery Time (trr): 110 ns Technology: Standard Diode Configuration: 1 Pair Common Anode Current - Average Rectified (Io) (per Diode): 100A Supplier Device Package: Twin Tower Operating Temperature - Junction: -55°C ~ 150°C Part Status: Active Voltage - DC Reverse (Vr) (Max): 600 V Voltage - Forward (Vf) (Max) @ If: 1.7 V @ 50 A Current - Reverse Leakage @ Vr: 25 µA @ 50 V |
товару немає в наявності |
В кошику од. на суму грн. | |||||||||||
 |
MUR20060CTR | GeneSiC Semiconductor |
Diode Modules SI S-FST RECOV 2TWR 50-600V200A600P/420R |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||||
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MUR2505 | GeneSiC Semiconductor |
Rectifiers 50V 25A Super Fast Recovery |
на замовлення 45 шт: термін постачання 21-30 дні (днів) |
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| MUR2505 | GeneSiC Semiconductor |
Description: DIODE GEN PURP 50V 25A DO4 Packaging: Bulk Package / Case: DO-203AA, DO-4, Stud Mounting Type: Chassis, Stud Mount Speed: Fast Recovery =< 500ns, > 200mA (Io) Reverse Recovery Time (trr): 75 ns Technology: Standard Current - Average Rectified (Io): 25A Supplier Device Package: DO-4 Operating Temperature - Junction: -55°C ~ 150°C Voltage - DC Reverse (Vr) (Max): 50 V Voltage - Forward (Vf) (Max) @ If: 1 V @ 25 A Current - Reverse Leakage @ Vr: 10 µA @ 50 V |
товару немає в наявності |
В кошику од. на суму грн. | |||||||||||
| MUR2505R | GeneSiC Semiconductor |
Description: DIODE GEN PURP REV 50V 25A DO4 Packaging: Bulk Package / Case: DO-203AA, DO-4, Stud Mounting Type: Chassis, Stud Mount Speed: Fast Recovery =< 500ns, > 200mA (Io) Reverse Recovery Time (trr): 75 ns Technology: Standard, Reverse Polarity Current - Average Rectified (Io): 25A Supplier Device Package: DO-4 Operating Temperature - Junction: -55°C ~ 150°C Voltage - DC Reverse (Vr) (Max): 50 V Voltage - Forward (Vf) (Max) @ If: 1 V @ 25 A Current - Reverse Leakage @ Vr: 10 µA @ 50 V |
товару немає в наявності |
В кошику од. на суму грн. | |||||||||||
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MUR2505R | GeneSiC Semiconductor |
Rectifiers 50V 25A REV Leads Super Fast Recovery |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||||
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MUR2510 | GeneSiC Semiconductor |
Rectifiers 100V 25A Super Fast Recovery |
на замовлення 633 шт: термін постачання 112-121 дні (днів) |
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MUR2510 | GeneSiC Semiconductor |
Rectifier Diode Switching 100V 25A 75ns 2-Pin DO-4 |
на замовлення 375 шт: термін постачання 21-31 дні (днів) |
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MUR2510 | GeneSiC Semiconductor |
Rectifier Diode Switching 100V 25A 75ns 2-Pin DO-4 |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||||
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MUR2510R | GeneSiC Semiconductor |
Rectifiers 100V 25A REV Leads Super Fast Recovery |
на замовлення 373 шт: термін постачання 112-121 дні (днів) |
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MUR2510R | GeneSiC Semiconductor |
Description: DIODE GEN PURP REV 100V 25A DO4 Packaging: Bulk Package / Case: DO-203AA, DO-4, Stud Mounting Type: Chassis, Stud Mount Speed: Fast Recovery =< 500ns, > 200mA (Io) Reverse Recovery Time (trr): 75 ns Technology: Standard, Reverse Polarity Current - Average Rectified (Io): 25A Supplier Device Package: DO-4 Operating Temperature - Junction: -55°C ~ 150°C Voltage - DC Reverse (Vr) (Max): 100 V Voltage - Forward (Vf) (Max) @ If: 1 V @ 25 A Current - Reverse Leakage @ Vr: 10 µA @ 50 V |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||||
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MUR2520 | GeneSiC Semiconductor |
Rectifiers 200V 25A Super Fast Recovery |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||||
| MUR2520R | GeneSiC Semiconductor |
Description: DIODE GEN PURP REV 200V 25A DO4 Packaging: Bulk Package / Case: DO-203AA, DO-4, Stud Mounting Type: Chassis, Stud Mount Speed: Fast Recovery =< 500ns, > 200mA (Io) Reverse Recovery Time (trr): 75 ns Technology: Standard, Reverse Polarity Current - Average Rectified (Io): 25A Supplier Device Package: DO-4 Operating Temperature - Junction: -55°C ~ 150°C Voltage - DC Reverse (Vr) (Max): 200 V Voltage - Forward (Vf) (Max) @ If: 1 V @ 25 A Current - Reverse Leakage @ Vr: 10 µA @ 50 V |
товару немає в наявності |
В кошику од. на суму грн. | |||||||||||
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MUR2520R | GeneSiC Semiconductor |
Rectifiers 200V 25A REV Leads Super Fast Recovery |
на замовлення 135 шт: термін постачання 21-30 дні (днів) |
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| MUR2540 | GeneSiC Semiconductor |
Description: DIODE GEN PURP 400V 25A DO4 Packaging: Bulk Package / Case: DO-203AA, DO-4, Stud Mounting Type: Chassis, Stud Mount Speed: Fast Recovery =< 500ns, > 200mA (Io) Reverse Recovery Time (trr): 75 ns Technology: Standard Current - Average Rectified (Io): 25A Supplier Device Package: DO-4 Operating Temperature - Junction: -55°C ~ 150°C Voltage - DC Reverse (Vr) (Max): 400 V Voltage - Forward (Vf) (Max) @ If: 1.3 V @ 25 A Current - Reverse Leakage @ Vr: 10 µA @ 50 V |
товару немає в наявності |
В кошику од. на суму грн. | |||||||||||
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MUR2540 | GeneSiC Semiconductor |
Rectifiers 400V 25A Super Fast Recovery |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||||
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MUR2540R | GeneSiC Semiconductor |
Rectifiers 400V 25A REV Leads Super Fast Recovery |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||||
| MUR2540R | GeneSiC Semiconductor |
Description: DIODE GEN PURP REV 400V 25A DO4 Packaging: Bulk Package / Case: DO-203AA, DO-4, Stud Mounting Type: Chassis, Stud Mount Speed: Fast Recovery =< 500ns, > 200mA (Io) Reverse Recovery Time (trr): 75 ns Technology: Standard, Reverse Polarity Current - Average Rectified (Io): 25A Supplier Device Package: DO-4 Operating Temperature - Junction: -55°C ~ 150°C Voltage - DC Reverse (Vr) (Max): 400 V Voltage - Forward (Vf) (Max) @ If: 1.3 V @ 25 A Current - Reverse Leakage @ Vr: 10 µA @ 50 V |
товару немає в наявності |
В кошику од. на суму грн. | |||||||||||
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MUR2560 | GeneSiC Semiconductor |
Rectifiers 600V 25A Super Fast Recovery |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||||
| MUR2560 | GeneSiC Semiconductor |
Description: DIODE GEN PURP 600V 25A DO4 Packaging: Bulk Package / Case: DO-203AA, DO-4, Stud Mounting Type: Chassis, Stud Mount Speed: Fast Recovery =< 500ns, > 200mA (Io) Reverse Recovery Time (trr): 90 ns Technology: Standard Current - Average Rectified (Io): 25A Supplier Device Package: DO-4 Operating Temperature - Junction: -55°C ~ 150°C Voltage - DC Reverse (Vr) (Max): 600 V Voltage - Forward (Vf) (Max) @ If: 1.7 V @ 25 A Current - Reverse Leakage @ Vr: 10 µA @ 50 V |
товару немає в наявності |
В кошику од. на суму грн. | |||||||||||
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MUR2560R | GeneSiC Semiconductor |
Rectifiers 600V 25A REV Leads Super Fast Recovery |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||||
| MUR2560R | GeneSiC Semiconductor |
Description: DIODE GEN PURP REV 600V 25A DO4 Packaging: Bulk Package / Case: DO-203AA, DO-4, Stud Mounting Type: Chassis, Stud Mount Speed: Fast Recovery =< 500ns, > 200mA (Io) Reverse Recovery Time (trr): 90 ns Technology: Standard, Reverse Polarity Current - Average Rectified (Io): 25A Supplier Device Package: DO-4 Operating Temperature - Junction: -55°C ~ 150°C Voltage - DC Reverse (Vr) (Max): 600 V Voltage - Forward (Vf) (Max) @ If: 1.7 V @ 25 A Current - Reverse Leakage @ Vr: 10 µA @ 50 V |
товару немає в наявності |
В кошику од. на суму грн. | |||||||||||
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MUR2X030A02 | GeneSiC Semiconductor |
Description: DIODE MODULE GP 200V 30A SOT-227 Packaging: Bulk Package / Case: SOT-227-4, miniBLOC Mounting Type: Chassis Mount Speed: Fast Recovery =< 500ns, > 200mA (Io) Reverse Recovery Time (trr): 60 ns Technology: Standard Diode Configuration: 2 Independent Current - Average Rectified (Io) (per Diode): 30A Supplier Device Package: SOT-227 Operating Temperature - Junction: -55°C ~ 175°C Part Status: Active Voltage - DC Reverse (Vr) (Max): 200 V Voltage - Forward (Vf) (Max) @ If: 1 V @ 30 A Current - Reverse Leakage @ Vr: 25 µA @ 200 V |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||||
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MUR2X030A02 | GeneSiC Semiconductor |
Diode Modules 200V 60A Fwd Super Fast Recovery |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||||
|
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MUR2X030A04 | GeneSiC Semiconductor |
Description: DIODE MODULE GP 400V 30A SOT227 Packaging: Bulk Package / Case: SOT-227-4, miniBLOC Mounting Type: Chassis Mount Speed: Standard Recovery >500ns, > 200mA (Io) Technology: Standard Diode Configuration: 2 Independent Current - Average Rectified (Io) (per Diode): 30A Supplier Device Package: SOT-227 Operating Temperature - Junction: -55°C ~ 175°C Voltage - DC Reverse (Vr) (Max): 400 V Voltage - Forward (Vf) (Max) @ If: 1.3 V @ 30 A Current - Reverse Leakage @ Vr: 25 µA @ 400 V |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||||
 |
MUR2X030A04 | GeneSiC Semiconductor |
Diode Modules 400V 60A Fwd Super Fast Recovery |
товару немає в наявності |
В кошику од. на суму грн. |
| MUR10010CTR |
|
Виробник: GeneSiC Semiconductor
Diode Modules SI S-FST RECOV 2TWR 50-600V 100A100P/70R
Diode Modules SI S-FST RECOV 2TWR 50-600V 100A100P/70R
товару немає в наявності
В кошику
од. на суму грн.
| MUR10020CT |
|
Виробник: GeneSiC Semiconductor
Diode Modules SI S-FST RECOV 2TWR 50-600V100A200P/140R
Diode Modules SI S-FST RECOV 2TWR 50-600V100A200P/140R
на замовлення 20 шт:
термін постачання 21-30 дні (днів)| Кількість | Ціна |
|---|---|
| 1+ | 5624.42 грн |
| 10+ | 4799.01 грн |
| 25+ | 3920.91 грн |
| MUR10020CT |
|
Виробник: GeneSiC Semiconductor
Description: DIODE MODULE GP 200V 50A 2TOWER
Packaging: Bulk
Package / Case: Twin Tower
Mounting Type: Chassis Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 75 ns
Technology: Standard
Diode Configuration: 1 Pair Common Cathode
Current - Average Rectified (Io) (per Diode): 50A
Supplier Device Package: Twin Tower
Operating Temperature - Junction: -55°C ~ 150°C
Voltage - DC Reverse (Vr) (Max): 200 V
Voltage - Forward (Vf) (Max) @ If: 1.3 V @ 50 A
Current - Reverse Leakage @ Vr: 25 µA @ 50 V
Description: DIODE MODULE GP 200V 50A 2TOWER
Packaging: Bulk
Package / Case: Twin Tower
Mounting Type: Chassis Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 75 ns
Technology: Standard
Diode Configuration: 1 Pair Common Cathode
Current - Average Rectified (Io) (per Diode): 50A
Supplier Device Package: Twin Tower
Operating Temperature - Junction: -55°C ~ 150°C
Voltage - DC Reverse (Vr) (Max): 200 V
Voltage - Forward (Vf) (Max) @ If: 1.3 V @ 50 A
Current - Reverse Leakage @ Vr: 25 µA @ 50 V
товару немає в наявності
В кошику
од. на суму грн.
| MUR10020CT |
|
Виробник: GeneSiC Semiconductor
Diode Switching 200V 100A 3-Pin Twin Tower
Diode Switching 200V 100A 3-Pin Twin Tower
товару немає в наявності
В кошику
од. на суму грн.
| MUR10020CTR |
|
Виробник: GeneSiC Semiconductor
Description: DIODE MODULE GP 200V 50A 2TOWER
Packaging: Bulk
Package / Case: Twin Tower
Mounting Type: Chassis Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 75 ns
Technology: Standard
Diode Configuration: 1 Pair Common Anode
Current - Average Rectified (Io) (per Diode): 50A
Supplier Device Package: Twin Tower
Operating Temperature - Junction: -55°C ~ 150°C
Voltage - DC Reverse (Vr) (Max): 200 V
Voltage - Forward (Vf) (Max) @ If: 1.3 V @ 50 A
Current - Reverse Leakage @ Vr: 25 µA @ 50 V
Description: DIODE MODULE GP 200V 50A 2TOWER
Packaging: Bulk
Package / Case: Twin Tower
Mounting Type: Chassis Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 75 ns
Technology: Standard
Diode Configuration: 1 Pair Common Anode
Current - Average Rectified (Io) (per Diode): 50A
Supplier Device Package: Twin Tower
Operating Temperature - Junction: -55°C ~ 150°C
Voltage - DC Reverse (Vr) (Max): 200 V
Voltage - Forward (Vf) (Max) @ If: 1.3 V @ 50 A
Current - Reverse Leakage @ Vr: 25 µA @ 50 V
товару немає в наявності
В кошику
од. на суму грн.
| MUR10020CTR |
|
Виробник: GeneSiC Semiconductor
Diode Modules SI S-FST RECOV 2TWR 50-600V100A200P/140R
Diode Modules SI S-FST RECOV 2TWR 50-600V100A200P/140R
товару немає в наявності
В кошику
од. на суму грн.
| MUR10040CT |
|
Виробник: GeneSiC Semiconductor
Description: DIODE MODULE GP 400V 50A 2TOWER
Packaging: Bulk
Package / Case: Twin Tower
Mounting Type: Chassis Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 90 ns
Technology: Standard
Diode Configuration: 1 Pair Common Cathode
Current - Average Rectified (Io) (per Diode): 50A
Supplier Device Package: Twin Tower
Operating Temperature - Junction: -55°C ~ 150°C
Voltage - DC Reverse (Vr) (Max): 400 V
Voltage - Forward (Vf) (Max) @ If: 1.3 V @ 50 A
Current - Reverse Leakage @ Vr: 25 µA @ 50 V
Description: DIODE MODULE GP 400V 50A 2TOWER
Packaging: Bulk
Package / Case: Twin Tower
Mounting Type: Chassis Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 90 ns
Technology: Standard
Diode Configuration: 1 Pair Common Cathode
Current - Average Rectified (Io) (per Diode): 50A
Supplier Device Package: Twin Tower
Operating Temperature - Junction: -55°C ~ 150°C
Voltage - DC Reverse (Vr) (Max): 400 V
Voltage - Forward (Vf) (Max) @ If: 1.3 V @ 50 A
Current - Reverse Leakage @ Vr: 25 µA @ 50 V
товару немає в наявності
В кошику
од. на суму грн.
| MUR10040CT |
|
Виробник: GeneSiC Semiconductor
Diode Modules SI S-FST RECOV 2TWR 50-600V100A400P/280R
Diode Modules SI S-FST RECOV 2TWR 50-600V100A400P/280R
товару немає в наявності
В кошику
од. на суму грн.
| MUR10040CTR |
|
Виробник: GeneSiC Semiconductor
Description: DIODE MODULE GP 400V 50A 2TOWER
Packaging: Bulk
Package / Case: Twin Tower
Mounting Type: Chassis Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 90 ns
Technology: Standard
Diode Configuration: 1 Pair Common Anode
Current - Average Rectified (Io) (per Diode): 50A
Supplier Device Package: Twin Tower
Operating Temperature - Junction: -55°C ~ 150°C
Voltage - DC Reverse (Vr) (Max): 400 V
Voltage - Forward (Vf) (Max) @ If: 1.3 V @ 50 A
Current - Reverse Leakage @ Vr: 25 µA @ 50 V
Description: DIODE MODULE GP 400V 50A 2TOWER
Packaging: Bulk
Package / Case: Twin Tower
Mounting Type: Chassis Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 90 ns
Technology: Standard
Diode Configuration: 1 Pair Common Anode
Current - Average Rectified (Io) (per Diode): 50A
Supplier Device Package: Twin Tower
Operating Temperature - Junction: -55°C ~ 150°C
Voltage - DC Reverse (Vr) (Max): 400 V
Voltage - Forward (Vf) (Max) @ If: 1.3 V @ 50 A
Current - Reverse Leakage @ Vr: 25 µA @ 50 V
товару немає в наявності
В кошику
од. на суму грн.
| MUR10040CTR |
|
Виробник: GeneSiC Semiconductor
Diode Modules SI S-FST RECOV 2TWR 50-600V100A400P/280R
Diode Modules SI S-FST RECOV 2TWR 50-600V100A400P/280R
товару немає в наявності
В кошику
од. на суму грн.
| MUR10060CT |
|
Виробник: GeneSiC Semiconductor
Rectifiers SI S-FST RECOV 2TWR 50-600V100A600P/420R
Rectifiers SI S-FST RECOV 2TWR 50-600V100A600P/420R
товару немає в наявності
В кошику
од. на суму грн.
| MUR10060CT |
|
Виробник: GeneSiC Semiconductor
Description: DIODE MODULE GP 600V 50A 2TOWER
Packaging: Bulk
Package / Case: Twin Tower
Mounting Type: Chassis Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 110 ns
Technology: Standard
Diode Configuration: 1 Pair Common Cathode
Current - Average Rectified (Io) (per Diode): 50A
Supplier Device Package: Twin Tower
Operating Temperature - Junction: -55°C ~ 150°C
Voltage - DC Reverse (Vr) (Max): 600 V
Voltage - Forward (Vf) (Max) @ If: 1.7 V @ 50 A
Current - Reverse Leakage @ Vr: 25 µA @ 50 V
Description: DIODE MODULE GP 600V 50A 2TOWER
Packaging: Bulk
Package / Case: Twin Tower
Mounting Type: Chassis Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 110 ns
Technology: Standard
Diode Configuration: 1 Pair Common Cathode
Current - Average Rectified (Io) (per Diode): 50A
Supplier Device Package: Twin Tower
Operating Temperature - Junction: -55°C ~ 150°C
Voltage - DC Reverse (Vr) (Max): 600 V
Voltage - Forward (Vf) (Max) @ If: 1.7 V @ 50 A
Current - Reverse Leakage @ Vr: 25 µA @ 50 V
товару немає в наявності
В кошику
од. на суму грн.
| MUR10060CTR |
|
Виробник: GeneSiC Semiconductor
Description: DIODE MODULE GP 600V 50A 2TOWER
Packaging: Bulk
Package / Case: Twin Tower
Mounting Type: Chassis Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 110 ns
Technology: Standard
Diode Configuration: 1 Pair Common Anode
Current - Average Rectified (Io) (per Diode): 50A
Supplier Device Package: Twin Tower
Operating Temperature - Junction: -55°C ~ 150°C
Voltage - DC Reverse (Vr) (Max): 600 V
Voltage - Forward (Vf) (Max) @ If: 1.7 V @ 50 A
Current - Reverse Leakage @ Vr: 25 µA @ 50 V
Description: DIODE MODULE GP 600V 50A 2TOWER
Packaging: Bulk
Package / Case: Twin Tower
Mounting Type: Chassis Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 110 ns
Technology: Standard
Diode Configuration: 1 Pair Common Anode
Current - Average Rectified (Io) (per Diode): 50A
Supplier Device Package: Twin Tower
Operating Temperature - Junction: -55°C ~ 150°C
Voltage - DC Reverse (Vr) (Max): 600 V
Voltage - Forward (Vf) (Max) @ If: 1.7 V @ 50 A
Current - Reverse Leakage @ Vr: 25 µA @ 50 V
товару немає в наявності
В кошику
од. на суму грн.
| MUR10060CTR |
|
Виробник: GeneSiC Semiconductor
Rectifiers SI S-FST RECOV 2TWR 50-600V100A600P/420R
Rectifiers SI S-FST RECOV 2TWR 50-600V100A600P/420R
на замовлення 6 шт:
термін постачання 21-30 дні (днів)В кошику од. на суму грн.
| MUR20005CT |
|
Виробник: GeneSiC Semiconductor
Diode Modules SI S-FST RECOV 2TWR 50-600V 200A 50P/35R
Diode Modules SI S-FST RECOV 2TWR 50-600V 200A 50P/35R
товару немає в наявності
В кошику
од. на суму грн.
| MUR20005CT |
|
Виробник: GeneSiC Semiconductor
Description: DIODE MODULE GP 50V 100A 2TOWER
Packaging: Bulk
Package / Case: Twin Tower
Mounting Type: Chassis Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 75 ns
Technology: Standard
Diode Configuration: 1 Pair Common Cathode
Current - Average Rectified (Io) (per Diode): 100A
Supplier Device Package: Twin Tower
Operating Temperature - Junction: -55°C ~ 150°C
Part Status: Obsolete
Voltage - DC Reverse (Vr) (Max): 50 V
Voltage - Forward (Vf) (Max) @ If: 1.3 V @ 100 A
Current - Reverse Leakage @ Vr: 25 µA @ 50 V
Description: DIODE MODULE GP 50V 100A 2TOWER
Packaging: Bulk
Package / Case: Twin Tower
Mounting Type: Chassis Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 75 ns
Technology: Standard
Diode Configuration: 1 Pair Common Cathode
Current - Average Rectified (Io) (per Diode): 100A
Supplier Device Package: Twin Tower
Operating Temperature - Junction: -55°C ~ 150°C
Part Status: Obsolete
Voltage - DC Reverse (Vr) (Max): 50 V
Voltage - Forward (Vf) (Max) @ If: 1.3 V @ 100 A
Current - Reverse Leakage @ Vr: 25 µA @ 50 V
товару немає в наявності
В кошику
од. на суму грн.
| MUR20005CTR |
|
Виробник: GeneSiC Semiconductor
Diode Modules SI S-FST RECOV 2TWR 50-600V 200A 50P/35R
Diode Modules SI S-FST RECOV 2TWR 50-600V 200A 50P/35R
товару немає в наявності
В кошику
од. на суму грн.
| MUR20005CTR |
|
Виробник: GeneSiC Semiconductor
Description: DIODE MODULE GP 50V 100A 2TOWER
Packaging: Bulk
Package / Case: Twin Tower
Mounting Type: Chassis Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 75 ns
Technology: Standard
Diode Configuration: 1 Pair Common Anode
Current - Average Rectified (Io) (per Diode): 100A
Supplier Device Package: Twin Tower
Operating Temperature - Junction: -55°C ~ 150°C
Part Status: Obsolete
Voltage - DC Reverse (Vr) (Max): 50 V
Voltage - Forward (Vf) (Max) @ If: 1.3 V @ 100 A
Current - Reverse Leakage @ Vr: 25 µA @ 50 V
Description: DIODE MODULE GP 50V 100A 2TOWER
Packaging: Bulk
Package / Case: Twin Tower
Mounting Type: Chassis Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 75 ns
Technology: Standard
Diode Configuration: 1 Pair Common Anode
Current - Average Rectified (Io) (per Diode): 100A
Supplier Device Package: Twin Tower
Operating Temperature - Junction: -55°C ~ 150°C
Part Status: Obsolete
Voltage - DC Reverse (Vr) (Max): 50 V
Voltage - Forward (Vf) (Max) @ If: 1.3 V @ 100 A
Current - Reverse Leakage @ Vr: 25 µA @ 50 V
товару немає в наявності
В кошику
од. на суму грн.
| MUR20010CT |
|
Виробник: GeneSiC Semiconductor
Description: DIODE MODULE GP 100V 100A 2TOWER
Packaging: Bulk
Package / Case: Twin Tower
Mounting Type: Chassis Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 75 ns
Technology: Standard
Diode Configuration: 1 Pair Common Cathode
Current - Average Rectified (Io) (per Diode): 100A
Supplier Device Package: Twin Tower
Operating Temperature - Junction: -55°C ~ 150°C
Part Status: Active
Voltage - DC Reverse (Vr) (Max): 100 V
Voltage - Forward (Vf) (Max) @ If: 1.3 V @ 100 A
Current - Reverse Leakage @ Vr: 25 µA @ 50 V
Description: DIODE MODULE GP 100V 100A 2TOWER
Packaging: Bulk
Package / Case: Twin Tower
Mounting Type: Chassis Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 75 ns
Technology: Standard
Diode Configuration: 1 Pair Common Cathode
Current - Average Rectified (Io) (per Diode): 100A
Supplier Device Package: Twin Tower
Operating Temperature - Junction: -55°C ~ 150°C
Part Status: Active
Voltage - DC Reverse (Vr) (Max): 100 V
Voltage - Forward (Vf) (Max) @ If: 1.3 V @ 100 A
Current - Reverse Leakage @ Vr: 25 µA @ 50 V
товару немає в наявності
В кошику
од. на суму грн.
| MUR20010CT |
|
Виробник: GeneSiC Semiconductor
Diode Modules 100V 200A Super Fast Recovery
Diode Modules 100V 200A Super Fast Recovery
товару немає в наявності
В кошику
од. на суму грн.
| MUR20010CTR |
|
Виробник: GeneSiC Semiconductor
Description: DIODE MODULE GP 100V 100A 2TOWER
Packaging: Bulk
Package / Case: Twin Tower
Mounting Type: Chassis Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 75 ns
Technology: Standard
Diode Configuration: 1 Pair Common Anode
Current - Average Rectified (Io) (per Diode): 100A
Supplier Device Package: Twin Tower
Operating Temperature - Junction: -55°C ~ 150°C
Part Status: Active
Voltage - DC Reverse (Vr) (Max): 100 V
Voltage - Forward (Vf) (Max) @ If: 1.3 V @ 100 A
Current - Reverse Leakage @ Vr: 25 µA @ 50 V
Description: DIODE MODULE GP 100V 100A 2TOWER
Packaging: Bulk
Package / Case: Twin Tower
Mounting Type: Chassis Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 75 ns
Technology: Standard
Diode Configuration: 1 Pair Common Anode
Current - Average Rectified (Io) (per Diode): 100A
Supplier Device Package: Twin Tower
Operating Temperature - Junction: -55°C ~ 150°C
Part Status: Active
Voltage - DC Reverse (Vr) (Max): 100 V
Voltage - Forward (Vf) (Max) @ If: 1.3 V @ 100 A
Current - Reverse Leakage @ Vr: 25 µA @ 50 V
товару немає в наявності
В кошику
од. на суму грн.
| MUR20010CTR |
|
Виробник: GeneSiC Semiconductor
Diode Modules 100V 200A Super Fast Recovery
Diode Modules 100V 200A Super Fast Recovery
товару немає в наявності
В кошику
од. на суму грн.
| MUR20020CT |
|
Виробник: GeneSiC Semiconductor
Diode Modules 200V 200A Super Fast Recovery
Diode Modules 200V 200A Super Fast Recovery
на замовлення 27 шт:
термін постачання 21-30 дні (днів)| Кількість | Ціна |
|---|---|
| 1+ | 8203.34 грн |
| 10+ | 7523.93 грн |
| 25+ | 6373.75 грн |
| 40+ | 6373.05 грн |
| 120+ | 6370.24 грн |
| MUR20020CT |
|
Виробник: GeneSiC Semiconductor
Description: DIODE MODULE GP 200V 100A 2TOWER
Packaging: Bulk
Package / Case: Twin Tower
Mounting Type: Chassis Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 75 ns
Technology: Standard
Diode Configuration: 1 Pair Common Cathode
Current - Average Rectified (Io) (per Diode): 100A
Supplier Device Package: Twin Tower
Operating Temperature - Junction: -55°C ~ 150°C
Part Status: Active
Voltage - DC Reverse (Vr) (Max): 200 V
Voltage - Forward (Vf) (Max) @ If: 1.3 V @ 100 A
Current - Reverse Leakage @ Vr: 25 µA @ 50 V
Description: DIODE MODULE GP 200V 100A 2TOWER
Packaging: Bulk
Package / Case: Twin Tower
Mounting Type: Chassis Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 75 ns
Technology: Standard
Diode Configuration: 1 Pair Common Cathode
Current - Average Rectified (Io) (per Diode): 100A
Supplier Device Package: Twin Tower
Operating Temperature - Junction: -55°C ~ 150°C
Part Status: Active
Voltage - DC Reverse (Vr) (Max): 200 V
Voltage - Forward (Vf) (Max) @ If: 1.3 V @ 100 A
Current - Reverse Leakage @ Vr: 25 µA @ 50 V
на замовлення 48 шт:
термін постачання 21-31 дні (днів)| Кількість | Ціна |
|---|---|
| 1+ | 7971.82 грн |
| MUR20020CT |
|
Виробник: GeneSiC Semiconductor
Diode Switching 200V 200A 3-Pin Twin Tower
Diode Switching 200V 200A 3-Pin Twin Tower
товару немає в наявності
В кошику
од. на суму грн.
| MUR20020CTR |
|
Виробник: GeneSiC Semiconductor
Description: DIODE MODULE GP 200V 100A 2TOWER
Packaging: Bulk
Package / Case: Twin Tower
Mounting Type: Chassis Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 75 ns
Technology: Standard
Diode Configuration: 1 Pair Common Anode
Current - Average Rectified (Io) (per Diode): 100A
Supplier Device Package: Twin Tower
Operating Temperature - Junction: -55°C ~ 150°C
Part Status: Active
Voltage - DC Reverse (Vr) (Max): 200 V
Voltage - Forward (Vf) (Max) @ If: 1.3 V @ 100 A
Current - Reverse Leakage @ Vr: 25 µA @ 50 V
Description: DIODE MODULE GP 200V 100A 2TOWER
Packaging: Bulk
Package / Case: Twin Tower
Mounting Type: Chassis Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 75 ns
Technology: Standard
Diode Configuration: 1 Pair Common Anode
Current - Average Rectified (Io) (per Diode): 100A
Supplier Device Package: Twin Tower
Operating Temperature - Junction: -55°C ~ 150°C
Part Status: Active
Voltage - DC Reverse (Vr) (Max): 200 V
Voltage - Forward (Vf) (Max) @ If: 1.3 V @ 100 A
Current - Reverse Leakage @ Vr: 25 µA @ 50 V
товару немає в наявності
В кошику
од. на суму грн.
| MUR20020CTR |
|
Виробник: GeneSiC Semiconductor
Diode Modules 200V 200A Super Fast Recovery
Diode Modules 200V 200A Super Fast Recovery
товару немає в наявності
В кошику
од. на суму грн.
| MUR20040CT |
|
Виробник: GeneSiC Semiconductor
Diode Switching 400V 200A 3-Pin Twin Tower
Diode Switching 400V 200A 3-Pin Twin Tower
товару немає в наявності
В кошику
од. на суму грн.
| MUR20040CT |
|
Виробник: GeneSiC Semiconductor
Diode Modules 400V 200A Super Fast Recovery
Diode Modules 400V 200A Super Fast Recovery
товару немає в наявності
В кошику
од. на суму грн.
| MUR20040CT |
|
Виробник: GeneSiC Semiconductor
Description: DIODE MODULE GP 400V 100A 2TOWER
Packaging: Bulk
Package / Case: Twin Tower
Mounting Type: Chassis Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 90 ns
Technology: Standard
Diode Configuration: 1 Pair Common Cathode
Current - Average Rectified (Io) (per Diode): 100A
Supplier Device Package: Twin Tower
Operating Temperature - Junction: -55°C ~ 150°C
Part Status: Active
Voltage - DC Reverse (Vr) (Max): 400 V
Voltage - Forward (Vf) (Max) @ If: 1.3 V @ 50 A
Current - Reverse Leakage @ Vr: 25 µA @ 50 V
Description: DIODE MODULE GP 400V 100A 2TOWER
Packaging: Bulk
Package / Case: Twin Tower
Mounting Type: Chassis Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 90 ns
Technology: Standard
Diode Configuration: 1 Pair Common Cathode
Current - Average Rectified (Io) (per Diode): 100A
Supplier Device Package: Twin Tower
Operating Temperature - Junction: -55°C ~ 150°C
Part Status: Active
Voltage - DC Reverse (Vr) (Max): 400 V
Voltage - Forward (Vf) (Max) @ If: 1.3 V @ 50 A
Current - Reverse Leakage @ Vr: 25 µA @ 50 V
товару немає в наявності
В кошику
од. на суму грн.
| MUR20040CTR |
|
Виробник: GeneSiC Semiconductor
Description: DIODE MODULE GP 400V 100A 2TOWER
Packaging: Bulk
Package / Case: Twin Tower
Mounting Type: Chassis Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 90 ns
Technology: Standard
Diode Configuration: 1 Pair Common Anode
Current - Average Rectified (Io) (per Diode): 100A
Supplier Device Package: Twin Tower
Operating Temperature - Junction: -55°C ~ 150°C
Part Status: Active
Voltage - DC Reverse (Vr) (Max): 400 V
Voltage - Forward (Vf) (Max) @ If: 1.3 V @ 50 A
Current - Reverse Leakage @ Vr: 25 µA @ 50 V
Description: DIODE MODULE GP 400V 100A 2TOWER
Packaging: Bulk
Package / Case: Twin Tower
Mounting Type: Chassis Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 90 ns
Technology: Standard
Diode Configuration: 1 Pair Common Anode
Current - Average Rectified (Io) (per Diode): 100A
Supplier Device Package: Twin Tower
Operating Temperature - Junction: -55°C ~ 150°C
Part Status: Active
Voltage - DC Reverse (Vr) (Max): 400 V
Voltage - Forward (Vf) (Max) @ If: 1.3 V @ 50 A
Current - Reverse Leakage @ Vr: 25 µA @ 50 V
товару немає в наявності
В кошику
од. на суму грн.
| MUR20040CTR |
|
Виробник: GeneSiC Semiconductor
Diode Modules 400V 200A Super Fast Recovery
Diode Modules 400V 200A Super Fast Recovery
товару немає в наявності
В кошику
од. на суму грн.
| MUR20060CT |
|
Виробник: GeneSiC Semiconductor
Description: DIODE MODULE GP 600V 100A 2TOWER
Packaging: Bulk
Package / Case: Twin Tower
Mounting Type: Chassis Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 110 ns
Technology: Standard
Diode Configuration: 1 Pair Common Cathode
Current - Average Rectified (Io) (per Diode): 100A
Supplier Device Package: Twin Tower
Operating Temperature - Junction: -55°C ~ 150°C
Part Status: Active
Voltage - DC Reverse (Vr) (Max): 600 V
Voltage - Forward (Vf) (Max) @ If: 1.7 V @ 50 A
Current - Reverse Leakage @ Vr: 25 µA @ 50 V
Description: DIODE MODULE GP 600V 100A 2TOWER
Packaging: Bulk
Package / Case: Twin Tower
Mounting Type: Chassis Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 110 ns
Technology: Standard
Diode Configuration: 1 Pair Common Cathode
Current - Average Rectified (Io) (per Diode): 100A
Supplier Device Package: Twin Tower
Operating Temperature - Junction: -55°C ~ 150°C
Part Status: Active
Voltage - DC Reverse (Vr) (Max): 600 V
Voltage - Forward (Vf) (Max) @ If: 1.7 V @ 50 A
Current - Reverse Leakage @ Vr: 25 µA @ 50 V
товару немає в наявності
В кошику
од. на суму грн.
| MUR20060CT |
|
Виробник: GeneSiC Semiconductor
Diode Modules SI S-FST RECOV 2TWR 50-600V200A600P/420R
Diode Modules SI S-FST RECOV 2TWR 50-600V200A600P/420R
на замовлення 7 шт:
термін постачання 21-30 дні (днів)| Кількість | Ціна |
|---|---|
| 1+ | 8204.16 грн |
| 10+ | 7102.67 грн |
| 25+ | 5865.25 грн |
| 40+ | 5863.15 грн |
| MUR20060CTR |
|
Виробник: GeneSiC Semiconductor
Description: DIODE MODULE GP 600V 100A 2TOWER
Packaging: Bulk
Package / Case: Twin Tower
Mounting Type: Chassis Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 110 ns
Technology: Standard
Diode Configuration: 1 Pair Common Anode
Current - Average Rectified (Io) (per Diode): 100A
Supplier Device Package: Twin Tower
Operating Temperature - Junction: -55°C ~ 150°C
Part Status: Active
Voltage - DC Reverse (Vr) (Max): 600 V
Voltage - Forward (Vf) (Max) @ If: 1.7 V @ 50 A
Current - Reverse Leakage @ Vr: 25 µA @ 50 V
Description: DIODE MODULE GP 600V 100A 2TOWER
Packaging: Bulk
Package / Case: Twin Tower
Mounting Type: Chassis Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 110 ns
Technology: Standard
Diode Configuration: 1 Pair Common Anode
Current - Average Rectified (Io) (per Diode): 100A
Supplier Device Package: Twin Tower
Operating Temperature - Junction: -55°C ~ 150°C
Part Status: Active
Voltage - DC Reverse (Vr) (Max): 600 V
Voltage - Forward (Vf) (Max) @ If: 1.7 V @ 50 A
Current - Reverse Leakage @ Vr: 25 µA @ 50 V
товару немає в наявності
В кошику
од. на суму грн.
| MUR20060CTR |
|
Виробник: GeneSiC Semiconductor
Diode Modules SI S-FST RECOV 2TWR 50-600V200A600P/420R
Diode Modules SI S-FST RECOV 2TWR 50-600V200A600P/420R
товару немає в наявності
В кошику
од. на суму грн.
| MUR2505 |
|
Виробник: GeneSiC Semiconductor
Rectifiers 50V 25A Super Fast Recovery
Rectifiers 50V 25A Super Fast Recovery
на замовлення 45 шт:
термін постачання 21-30 дні (днів)| Кількість | Ціна |
|---|---|
| 1+ | 1100.70 грн |
| 10+ | 904.55 грн |
| 25+ | 730.53 грн |
| 100+ | 666.09 грн |
| 250+ | 575.74 грн |
| MUR2505 |
|
Виробник: GeneSiC Semiconductor
Description: DIODE GEN PURP 50V 25A DO4
Packaging: Bulk
Package / Case: DO-203AA, DO-4, Stud
Mounting Type: Chassis, Stud Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 75 ns
Technology: Standard
Current - Average Rectified (Io): 25A
Supplier Device Package: DO-4
Operating Temperature - Junction: -55°C ~ 150°C
Voltage - DC Reverse (Vr) (Max): 50 V
Voltage - Forward (Vf) (Max) @ If: 1 V @ 25 A
Current - Reverse Leakage @ Vr: 10 µA @ 50 V
Description: DIODE GEN PURP 50V 25A DO4
Packaging: Bulk
Package / Case: DO-203AA, DO-4, Stud
Mounting Type: Chassis, Stud Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 75 ns
Technology: Standard
Current - Average Rectified (Io): 25A
Supplier Device Package: DO-4
Operating Temperature - Junction: -55°C ~ 150°C
Voltage - DC Reverse (Vr) (Max): 50 V
Voltage - Forward (Vf) (Max) @ If: 1 V @ 25 A
Current - Reverse Leakage @ Vr: 10 µA @ 50 V
товару немає в наявності
В кошику
од. на суму грн.
| MUR2505R |
|
Виробник: GeneSiC Semiconductor
Description: DIODE GEN PURP REV 50V 25A DO4
Packaging: Bulk
Package / Case: DO-203AA, DO-4, Stud
Mounting Type: Chassis, Stud Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 75 ns
Technology: Standard, Reverse Polarity
Current - Average Rectified (Io): 25A
Supplier Device Package: DO-4
Operating Temperature - Junction: -55°C ~ 150°C
Voltage - DC Reverse (Vr) (Max): 50 V
Voltage - Forward (Vf) (Max) @ If: 1 V @ 25 A
Current - Reverse Leakage @ Vr: 10 µA @ 50 V
Description: DIODE GEN PURP REV 50V 25A DO4
Packaging: Bulk
Package / Case: DO-203AA, DO-4, Stud
Mounting Type: Chassis, Stud Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 75 ns
Technology: Standard, Reverse Polarity
Current - Average Rectified (Io): 25A
Supplier Device Package: DO-4
Operating Temperature - Junction: -55°C ~ 150°C
Voltage - DC Reverse (Vr) (Max): 50 V
Voltage - Forward (Vf) (Max) @ If: 1 V @ 25 A
Current - Reverse Leakage @ Vr: 10 µA @ 50 V
товару немає в наявності
В кошику
од. на суму грн.
| MUR2505R |
|
Виробник: GeneSiC Semiconductor
Rectifiers 50V 25A REV Leads Super Fast Recovery
Rectifiers 50V 25A REV Leads Super Fast Recovery
товару немає в наявності
В кошику
од. на суму грн.
| MUR2510 |
|
Виробник: GeneSiC Semiconductor
Rectifiers 100V 25A Super Fast Recovery
Rectifiers 100V 25A Super Fast Recovery
на замовлення 633 шт:
термін постачання 112-121 дні (днів)| Кількість | Ціна |
|---|---|
| 1+ | 1100.70 грн |
| 10+ | 904.55 грн |
| 25+ | 730.53 грн |
| 100+ | 664.69 грн |
| 250+ | 663.99 грн |
| MUR2510 |
|
Виробник: GeneSiC Semiconductor
Rectifier Diode Switching 100V 25A 75ns 2-Pin DO-4
Rectifier Diode Switching 100V 25A 75ns 2-Pin DO-4
на замовлення 375 шт:
термін постачання 21-31 дні (днів)| Кількість | Ціна |
|---|---|
| 10+ | 1332.19 грн |
| 25+ | 1172.37 грн |
| 50+ | 1098.83 грн |
| 100+ | 1010.29 грн |
| 250+ | 880.29 грн |
| MUR2510 |
|
Виробник: GeneSiC Semiconductor
Rectifier Diode Switching 100V 25A 75ns 2-Pin DO-4
Rectifier Diode Switching 100V 25A 75ns 2-Pin DO-4
товару немає в наявності
В кошику
од. на суму грн.
| MUR2510R |
|
Виробник: GeneSiC Semiconductor
Rectifiers 100V 25A REV Leads Super Fast Recovery
Rectifiers 100V 25A REV Leads Super Fast Recovery
на замовлення 373 шт:
термін постачання 112-121 дні (днів)| Кількість | Ціна |
|---|---|
| 1+ | 1100.70 грн |
| 10+ | 904.55 грн |
| 25+ | 730.53 грн |
| 100+ | 664.69 грн |
| 250+ | 663.99 грн |
| MUR2510R |
|
Виробник: GeneSiC Semiconductor
Description: DIODE GEN PURP REV 100V 25A DO4
Packaging: Bulk
Package / Case: DO-203AA, DO-4, Stud
Mounting Type: Chassis, Stud Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 75 ns
Technology: Standard, Reverse Polarity
Current - Average Rectified (Io): 25A
Supplier Device Package: DO-4
Operating Temperature - Junction: -55°C ~ 150°C
Voltage - DC Reverse (Vr) (Max): 100 V
Voltage - Forward (Vf) (Max) @ If: 1 V @ 25 A
Current - Reverse Leakage @ Vr: 10 µA @ 50 V
Description: DIODE GEN PURP REV 100V 25A DO4
Packaging: Bulk
Package / Case: DO-203AA, DO-4, Stud
Mounting Type: Chassis, Stud Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 75 ns
Technology: Standard, Reverse Polarity
Current - Average Rectified (Io): 25A
Supplier Device Package: DO-4
Operating Temperature - Junction: -55°C ~ 150°C
Voltage - DC Reverse (Vr) (Max): 100 V
Voltage - Forward (Vf) (Max) @ If: 1 V @ 25 A
Current - Reverse Leakage @ Vr: 10 µA @ 50 V
товару немає в наявності
В кошику
од. на суму грн.
| MUR2520 |
|
Виробник: GeneSiC Semiconductor
Rectifiers 200V 25A Super Fast Recovery
Rectifiers 200V 25A Super Fast Recovery
товару немає в наявності
В кошику
од. на суму грн.
| MUR2520R |
|
Виробник: GeneSiC Semiconductor
Description: DIODE GEN PURP REV 200V 25A DO4
Packaging: Bulk
Package / Case: DO-203AA, DO-4, Stud
Mounting Type: Chassis, Stud Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 75 ns
Technology: Standard, Reverse Polarity
Current - Average Rectified (Io): 25A
Supplier Device Package: DO-4
Operating Temperature - Junction: -55°C ~ 150°C
Voltage - DC Reverse (Vr) (Max): 200 V
Voltage - Forward (Vf) (Max) @ If: 1 V @ 25 A
Current - Reverse Leakage @ Vr: 10 µA @ 50 V
Description: DIODE GEN PURP REV 200V 25A DO4
Packaging: Bulk
Package / Case: DO-203AA, DO-4, Stud
Mounting Type: Chassis, Stud Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 75 ns
Technology: Standard, Reverse Polarity
Current - Average Rectified (Io): 25A
Supplier Device Package: DO-4
Operating Temperature - Junction: -55°C ~ 150°C
Voltage - DC Reverse (Vr) (Max): 200 V
Voltage - Forward (Vf) (Max) @ If: 1 V @ 25 A
Current - Reverse Leakage @ Vr: 10 µA @ 50 V
товару немає в наявності
В кошику
од. на суму грн.
| MUR2520R |
|
Виробник: GeneSiC Semiconductor
Rectifiers 200V 25A REV Leads Super Fast Recovery
Rectifiers 200V 25A REV Leads Super Fast Recovery
на замовлення 135 шт:
термін постачання 21-30 дні (днів)| Кількість | Ціна |
|---|---|
| 1+ | 925.01 грн |
| 10+ | 759.56 грн |
| 25+ | 614.26 грн |
| 100+ | 549.82 грн |
| 250+ | 531.61 грн |
| MUR2540 |
|
Виробник: GeneSiC Semiconductor
Description: DIODE GEN PURP 400V 25A DO4
Packaging: Bulk
Package / Case: DO-203AA, DO-4, Stud
Mounting Type: Chassis, Stud Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 75 ns
Technology: Standard
Current - Average Rectified (Io): 25A
Supplier Device Package: DO-4
Operating Temperature - Junction: -55°C ~ 150°C
Voltage - DC Reverse (Vr) (Max): 400 V
Voltage - Forward (Vf) (Max) @ If: 1.3 V @ 25 A
Current - Reverse Leakage @ Vr: 10 µA @ 50 V
Description: DIODE GEN PURP 400V 25A DO4
Packaging: Bulk
Package / Case: DO-203AA, DO-4, Stud
Mounting Type: Chassis, Stud Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 75 ns
Technology: Standard
Current - Average Rectified (Io): 25A
Supplier Device Package: DO-4
Operating Temperature - Junction: -55°C ~ 150°C
Voltage - DC Reverse (Vr) (Max): 400 V
Voltage - Forward (Vf) (Max) @ If: 1.3 V @ 25 A
Current - Reverse Leakage @ Vr: 10 µA @ 50 V
товару немає в наявності
В кошику
од. на суму грн.
| MUR2540 |
|
Виробник: GeneSiC Semiconductor
Rectifiers 400V 25A Super Fast Recovery
Rectifiers 400V 25A Super Fast Recovery
товару немає в наявності
В кошику
од. на суму грн.
| MUR2540R |
|
Виробник: GeneSiC Semiconductor
Rectifiers 400V 25A REV Leads Super Fast Recovery
Rectifiers 400V 25A REV Leads Super Fast Recovery
товару немає в наявності
В кошику
од. на суму грн.
| MUR2540R |
|
Виробник: GeneSiC Semiconductor
Description: DIODE GEN PURP REV 400V 25A DO4
Packaging: Bulk
Package / Case: DO-203AA, DO-4, Stud
Mounting Type: Chassis, Stud Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 75 ns
Technology: Standard, Reverse Polarity
Current - Average Rectified (Io): 25A
Supplier Device Package: DO-4
Operating Temperature - Junction: -55°C ~ 150°C
Voltage - DC Reverse (Vr) (Max): 400 V
Voltage - Forward (Vf) (Max) @ If: 1.3 V @ 25 A
Current - Reverse Leakage @ Vr: 10 µA @ 50 V
Description: DIODE GEN PURP REV 400V 25A DO4
Packaging: Bulk
Package / Case: DO-203AA, DO-4, Stud
Mounting Type: Chassis, Stud Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 75 ns
Technology: Standard, Reverse Polarity
Current - Average Rectified (Io): 25A
Supplier Device Package: DO-4
Operating Temperature - Junction: -55°C ~ 150°C
Voltage - DC Reverse (Vr) (Max): 400 V
Voltage - Forward (Vf) (Max) @ If: 1.3 V @ 25 A
Current - Reverse Leakage @ Vr: 10 µA @ 50 V
товару немає в наявності
В кошику
од. на суму грн.
| MUR2560 |
|
Виробник: GeneSiC Semiconductor
Rectifiers 600V 25A Super Fast Recovery
Rectifiers 600V 25A Super Fast Recovery
товару немає в наявності
В кошику
од. на суму грн.
| MUR2560 |
|
Виробник: GeneSiC Semiconductor
Description: DIODE GEN PURP 600V 25A DO4
Packaging: Bulk
Package / Case: DO-203AA, DO-4, Stud
Mounting Type: Chassis, Stud Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 90 ns
Technology: Standard
Current - Average Rectified (Io): 25A
Supplier Device Package: DO-4
Operating Temperature - Junction: -55°C ~ 150°C
Voltage - DC Reverse (Vr) (Max): 600 V
Voltage - Forward (Vf) (Max) @ If: 1.7 V @ 25 A
Current - Reverse Leakage @ Vr: 10 µA @ 50 V
Description: DIODE GEN PURP 600V 25A DO4
Packaging: Bulk
Package / Case: DO-203AA, DO-4, Stud
Mounting Type: Chassis, Stud Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 90 ns
Technology: Standard
Current - Average Rectified (Io): 25A
Supplier Device Package: DO-4
Operating Temperature - Junction: -55°C ~ 150°C
Voltage - DC Reverse (Vr) (Max): 600 V
Voltage - Forward (Vf) (Max) @ If: 1.7 V @ 25 A
Current - Reverse Leakage @ Vr: 10 µA @ 50 V
товару немає в наявності
В кошику
од. на суму грн.
| MUR2560R |
|
Виробник: GeneSiC Semiconductor
Rectifiers 600V 25A REV Leads Super Fast Recovery
Rectifiers 600V 25A REV Leads Super Fast Recovery
товару немає в наявності
В кошику
од. на суму грн.
| MUR2560R |
|
Виробник: GeneSiC Semiconductor
Description: DIODE GEN PURP REV 600V 25A DO4
Packaging: Bulk
Package / Case: DO-203AA, DO-4, Stud
Mounting Type: Chassis, Stud Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 90 ns
Technology: Standard, Reverse Polarity
Current - Average Rectified (Io): 25A
Supplier Device Package: DO-4
Operating Temperature - Junction: -55°C ~ 150°C
Voltage - DC Reverse (Vr) (Max): 600 V
Voltage - Forward (Vf) (Max) @ If: 1.7 V @ 25 A
Current - Reverse Leakage @ Vr: 10 µA @ 50 V
Description: DIODE GEN PURP REV 600V 25A DO4
Packaging: Bulk
Package / Case: DO-203AA, DO-4, Stud
Mounting Type: Chassis, Stud Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 90 ns
Technology: Standard, Reverse Polarity
Current - Average Rectified (Io): 25A
Supplier Device Package: DO-4
Operating Temperature - Junction: -55°C ~ 150°C
Voltage - DC Reverse (Vr) (Max): 600 V
Voltage - Forward (Vf) (Max) @ If: 1.7 V @ 25 A
Current - Reverse Leakage @ Vr: 10 µA @ 50 V
товару немає в наявності
В кошику
од. на суму грн.
| MUR2X030A02 |
|
Виробник: GeneSiC Semiconductor
Description: DIODE MODULE GP 200V 30A SOT-227
Packaging: Bulk
Package / Case: SOT-227-4, miniBLOC
Mounting Type: Chassis Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 60 ns
Technology: Standard
Diode Configuration: 2 Independent
Current - Average Rectified (Io) (per Diode): 30A
Supplier Device Package: SOT-227
Operating Temperature - Junction: -55°C ~ 175°C
Part Status: Active
Voltage - DC Reverse (Vr) (Max): 200 V
Voltage - Forward (Vf) (Max) @ If: 1 V @ 30 A
Current - Reverse Leakage @ Vr: 25 µA @ 200 V
Description: DIODE MODULE GP 200V 30A SOT-227
Packaging: Bulk
Package / Case: SOT-227-4, miniBLOC
Mounting Type: Chassis Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 60 ns
Technology: Standard
Diode Configuration: 2 Independent
Current - Average Rectified (Io) (per Diode): 30A
Supplier Device Package: SOT-227
Operating Temperature - Junction: -55°C ~ 175°C
Part Status: Active
Voltage - DC Reverse (Vr) (Max): 200 V
Voltage - Forward (Vf) (Max) @ If: 1 V @ 30 A
Current - Reverse Leakage @ Vr: 25 µA @ 200 V
товару немає в наявності
В кошику
од. на суму грн.
| MUR2X030A02 |
|
Виробник: GeneSiC Semiconductor
Diode Modules 200V 60A Fwd Super Fast Recovery
Diode Modules 200V 60A Fwd Super Fast Recovery
товару немає в наявності
В кошику
од. на суму грн.
| MUR2X030A04 |
|
Виробник: GeneSiC Semiconductor
Description: DIODE MODULE GP 400V 30A SOT227
Packaging: Bulk
Package / Case: SOT-227-4, miniBLOC
Mounting Type: Chassis Mount
Speed: Standard Recovery >500ns, > 200mA (Io)
Technology: Standard
Diode Configuration: 2 Independent
Current - Average Rectified (Io) (per Diode): 30A
Supplier Device Package: SOT-227
Operating Temperature - Junction: -55°C ~ 175°C
Voltage - DC Reverse (Vr) (Max): 400 V
Voltage - Forward (Vf) (Max) @ If: 1.3 V @ 30 A
Current - Reverse Leakage @ Vr: 25 µA @ 400 V
Description: DIODE MODULE GP 400V 30A SOT227
Packaging: Bulk
Package / Case: SOT-227-4, miniBLOC
Mounting Type: Chassis Mount
Speed: Standard Recovery >500ns, > 200mA (Io)
Technology: Standard
Diode Configuration: 2 Independent
Current - Average Rectified (Io) (per Diode): 30A
Supplier Device Package: SOT-227
Operating Temperature - Junction: -55°C ~ 175°C
Voltage - DC Reverse (Vr) (Max): 400 V
Voltage - Forward (Vf) (Max) @ If: 1.3 V @ 30 A
Current - Reverse Leakage @ Vr: 25 µA @ 400 V
товару немає в наявності
В кошику
од. на суму грн.
| MUR2X030A04 |
|
Виробник: GeneSiC Semiconductor
Diode Modules 400V 60A Fwd Super Fast Recovery
Diode Modules 400V 60A Fwd Super Fast Recovery
товару немає в наявності
В кошику
од. на суму грн.