Продукція > GENESIC SEMICONDUCTOR > Всі товари виробника GENESIC SEMICONDUCTOR (4204) > Сторінка 64 з 71
| Фото | Назва | Виробник | Інформація |
Доступність |
Ціна |
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|---|---|---|---|---|---|---|---|---|---|---|---|
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MURT40060R | GeneSiC Semiconductor |
 Rectifiers SI S-FST RECOV 3TWR 50-600V400A600P/424R |
товару немає в наявності |
В кошику од. на суму грн. | ||||||
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MURTA200120 | GeneSiC Semiconductor |
Diode Modules 1200V 200A Si Super Fast Recovery |
товару немає в наявності |
В кошику од. на суму грн. | ||||||
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MURTA200120R | GeneSiC Semiconductor |
Diode Modules 1200V 200A Si Super Fast Recovery |
товару немає в наявності |
В кошику од. на суму грн. | ||||||
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MURTA20020 | GeneSiC Semiconductor |
Diode Modules 200V 200A Si Super Fast Recovery |
товару немає в наявності |
В кошику од. на суму грн. | ||||||
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MURTA20020R | GeneSiC Semiconductor |
Diode Modules 200V 200A Si Super Fast Recovery |
товару немає в наявності |
В кошику од. на суму грн. | ||||||
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MURTA20040 | GeneSiC Semiconductor |
Diode Modules 400V 200A Si Super Fast Recovery |
товару немає в наявності |
В кошику од. на суму грн. | ||||||
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MURTA20040R | GeneSiC Semiconductor |
Diode Modules 400V 200A Si Super Fast Recovery |
товару немає в наявності |
В кошику од. на суму грн. | ||||||
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MURTA20060 | GeneSiC Semiconductor |
Diode Modules 600V 200A Si Super Fast Recovery |
товару немає в наявності |
В кошику од. на суму грн. | ||||||
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MURTA20060R | GeneSiC Semiconductor |
Diode Modules 600V 200A Si Super Fast Recovery |
товару немає в наявності |
В кошику од. на суму грн. | ||||||
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MURTA300120 | GeneSiC Semiconductor |
Description: DIODE MODULE GP 600V 150A 3TOWER Packaging: Bulk Package / Case: Three Tower Mounting Type: Chassis Mount Speed: Standard Recovery >500ns, > 200mA (Io) Technology: Standard Diode Configuration: 1 Pair Common Cathode Current - Average Rectified (Io) (per Diode): 150A Supplier Device Package: Three Tower Operating Temperature - Junction: -55°C ~ 150°C Voltage - DC Reverse (Vr) (Max): 600 V Voltage - Forward (Vf) (Max) @ If: 2.6 V @ 150 A Current - Reverse Leakage @ Vr: 25 µA @ 600 V |
товару немає в наявності |
В кошику од. на суму грн. | ||||||
 |
MURTA300120 | GeneSiC Semiconductor |
Discrete Semiconductor Modules 1200V 300A Si Super Fast Recovery |
товару немає в наявності |
В кошику од. на суму грн. | ||||||
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MURTA300120R | GeneSiC Semiconductor |
Description: DIODE MODULE GP 600V 150A 3TOWER Packaging: Bulk Package / Case: Three Tower Mounting Type: Chassis Mount Speed: Standard Recovery >500ns, > 200mA (Io) Technology: Standard Diode Configuration: 1 Pair Common Anode Current - Average Rectified (Io) (per Diode): 150A Supplier Device Package: Three Tower Operating Temperature - Junction: -55°C ~ 150°C Voltage - DC Reverse (Vr) (Max): 600 V Voltage - Forward (Vf) (Max) @ If: 2.6 V @ 150 A Current - Reverse Leakage @ Vr: 25 µA @ 600 V |
товару немає в наявності |
В кошику од. на суму грн. | ||||||
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MURTA300120R | GeneSiC Semiconductor |
Discrete Semiconductor Modules 1200V 300A Si Super Fast Recovery |
товару немає в наявності |
В кошику од. на суму грн. | ||||||
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MURTA30020 | GeneSiC Semiconductor |
Discrete Semiconductor Modules 200V 300A Si Super Fast Recovery |
товару немає в наявності |
В кошику од. на суму грн. | ||||||
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MURTA30020 | GeneSiC Semiconductor |
Description: DIODE MODULE GP 200V 150A 3TOWER Packaging: Bulk Package / Case: Three Tower Mounting Type: Chassis Mount Speed: Standard Recovery >500ns, > 200mA (Io) Technology: Standard Diode Configuration: 1 Pair Common Cathode Current - Average Rectified (Io) (per Diode): 150A Supplier Device Package: Three Tower Operating Temperature - Junction: -55°C ~ 150°C Voltage - DC Reverse (Vr) (Max): 200 V Voltage - Forward (Vf) (Max) @ If: 1 V @ 150 A Current - Reverse Leakage @ Vr: 25 µA @ 200 V |
товару немає в наявності |
В кошику од. на суму грн. | ||||||
 |
MURTA30020R | GeneSiC Semiconductor |
Discrete Semiconductor Modules 200V 300A Si Super Fast Recovery |
товару немає в наявності |
В кошику од. на суму грн. | ||||||
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MURTA30020R | GeneSiC Semiconductor |
Description: DIODE MODULE GP 200V 150A 3TOWER Packaging: Bulk Package / Case: Three Tower Mounting Type: Chassis Mount Speed: Standard Recovery >500ns, > 200mA (Io) Technology: Standard Diode Configuration: 1 Pair Common Anode Current - Average Rectified (Io) (per Diode): 150A Supplier Device Package: Three Tower Operating Temperature - Junction: -55°C ~ 150°C Voltage - DC Reverse (Vr) (Max): 200 V Voltage - Forward (Vf) (Max) @ If: 1 V @ 150 A Current - Reverse Leakage @ Vr: 25 µA @ 200 V |
товару немає в наявності |
В кошику од. на суму грн. | ||||||
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MURTA30040 | GeneSiC Semiconductor |
Description: DIODE MODULE GP 400V 150A 3TOWER Packaging: Bulk Package / Case: Three Tower Mounting Type: Chassis Mount Speed: Standard Recovery >500ns, > 200mA (Io) Technology: Standard Diode Configuration: 1 Pair Common Cathode Current - Average Rectified (Io) (per Diode): 150A Supplier Device Package: Three Tower Operating Temperature - Junction: -55°C ~ 150°C Voltage - DC Reverse (Vr) (Max): 400 V Voltage - Forward (Vf) (Max) @ If: 1.3 V @ 150 A Current - Reverse Leakage @ Vr: 25 µA @ 400 V |
товару немає в наявності |
В кошику од. на суму грн. | ||||||
 |
MURTA30040 | GeneSiC Semiconductor |
Discrete Semiconductor Modules 400V 300A Si Super Fast Recovery |
товару немає в наявності |
В кошику од. на суму грн. | ||||||
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MURTA30040R | GeneSiC Semiconductor |
Description: DIODE MODULE GP 400V 150A 3TOWER Packaging: Bulk Package / Case: Three Tower Mounting Type: Chassis Mount Speed: Standard Recovery >500ns, > 200mA (Io) Technology: Standard Diode Configuration: 1 Pair Common Anode Current - Average Rectified (Io) (per Diode): 150A Supplier Device Package: Three Tower Operating Temperature - Junction: -55°C ~ 150°C Voltage - DC Reverse (Vr) (Max): 400 V Voltage - Forward (Vf) (Max) @ If: 1.3 V @ 150 A Current - Reverse Leakage @ Vr: 25 µA @ 400 V |
товару немає в наявності |
В кошику од. на суму грн. | ||||||
 |
MURTA30040R | GeneSiC Semiconductor |
Discrete Semiconductor Modules 400V 300A Si Super Fast Recovery |
товару немає в наявності |
В кошику од. на суму грн. | ||||||
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MURTA30060 | GeneSiC Semiconductor |
Description: DIODE MODULE GP 600V 150A 3TOWER Packaging: Bulk Package / Case: Three Tower Mounting Type: Chassis Mount Speed: Standard Recovery >500ns, > 200mA (Io) Technology: Standard Diode Configuration: 1 Pair Common Cathode Current - Average Rectified (Io) (per Diode): 150A Supplier Device Package: Three Tower Operating Temperature - Junction: -55°C ~ 150°C Voltage - DC Reverse (Vr) (Max): 600 V Voltage - Forward (Vf) (Max) @ If: 1.7 V @ 150 A Current - Reverse Leakage @ Vr: 25 µA @ 600 V |
товару немає в наявності |
В кошику од. на суму грн. | ||||||
 |
MURTA30060 | GeneSiC Semiconductor |
Diode Modules 600V 300A Si Super Fast Recovery |
товару немає в наявності |
В кошику од. на суму грн. | ||||||
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MURTA30060R | GeneSiC Semiconductor |
Description: DIODE MODULE GP 600V 150A 3TOWER Packaging: Bulk Package / Case: Three Tower Mounting Type: Chassis Mount Speed: Standard Recovery >500ns, > 200mA (Io) Technology: Standard Diode Configuration: 1 Pair Common Anode Current - Average Rectified (Io) (per Diode): 150A Supplier Device Package: Three Tower Operating Temperature - Junction: -55°C ~ 150°C Voltage - DC Reverse (Vr) (Max): 600 V Voltage - Forward (Vf) (Max) @ If: 1.7 V @ 150 A Current - Reverse Leakage @ Vr: 25 µA @ 600 V |
товару немає в наявності |
В кошику од. на суму грн. | ||||||
 |
MURTA30060R | GeneSiC Semiconductor |
Diode Modules 600V 300A Si Super Fast Recovery |
товару немає в наявності |
В кошику од. на суму грн. | ||||||
 |
MURTA400120 | GeneSiC Semiconductor |
Diode Modules 1200V 400A Si Super Fast Recovery |
товару немає в наявності |
В кошику од. на суму грн. | ||||||
 |
MURTA400120R | GeneSiC Semiconductor |
Diode Modules 1200V 400A Si Super Fast Recovery |
товару немає в наявності |
В кошику од. на суму грн. | ||||||
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MURTA40020 | GeneSiC Semiconductor |
Description: DIODE MODULE GP 200V 200A 3TOWER Packaging: Bulk Package / Case: Three Tower Mounting Type: Chassis Mount Speed: Standard Recovery >500ns, > 200mA (Io) Technology: Standard Diode Configuration: 1 Pair Common Cathode Current - Average Rectified (Io) (per Diode): 200A Supplier Device Package: Three Tower Operating Temperature - Junction: -55°C ~ 150°C Voltage - DC Reverse (Vr) (Max): 200 V Voltage - Forward (Vf) (Max) @ If: 1.3 V @ 200 A Current - Reverse Leakage @ Vr: 25 µA @ 200 V |
товару немає в наявності |
В кошику од. на суму грн. | ||||||
 |
MURTA40020 | GeneSiC Semiconductor |
Discrete Semiconductor Modules 200V 400A Si Super Fast Recovery |
товару немає в наявності |
В кошику од. на суму грн. | ||||||
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MURTA40020R | GeneSiC Semiconductor |
Description: DIODE MODULE GP 200V 200A 3TOWER Packaging: Bulk Package / Case: Three Tower Mounting Type: Chassis Mount Speed: Standard Recovery >500ns, > 200mA (Io) Technology: Standard Diode Configuration: 1 Pair Common Anode Current - Average Rectified (Io) (per Diode): 200A Supplier Device Package: Three Tower Operating Temperature - Junction: -55°C ~ 150°C Voltage - DC Reverse (Vr) (Max): 200 V Voltage - Forward (Vf) (Max) @ If: 1.3 V @ 200 A Current - Reverse Leakage @ Vr: 25 µA @ 200 V |
товару немає в наявності |
В кошику од. на суму грн. | ||||||
 |
MURTA40020R | GeneSiC Semiconductor |
Discrete Semiconductor Modules 200V 400A Si Super Fast Recovery |
товару немає в наявності |
В кошику од. на суму грн. | ||||||
 |
MURTA40040 | GeneSiC Semiconductor |
Discrete Semiconductor Modules 400V 400A Si Super Fast Recovery |
товару немає в наявності |
В кошику од. на суму грн. | ||||||
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MURTA40040 | GeneSiC Semiconductor |
Description: DIODE MODULE GP 400V 200A 3TOWER Packaging: Bulk Package / Case: Three Tower Mounting Type: Chassis Mount Speed: Standard Recovery >500ns, > 200mA (Io) Technology: Standard Diode Configuration: 1 Pair Common Cathode Current - Average Rectified (Io) (per Diode): 200A Supplier Device Package: Three Tower Operating Temperature - Junction: -55°C ~ 150°C Voltage - DC Reverse (Vr) (Max): 400 V Voltage - Forward (Vf) (Max) @ If: 1.3 V @ 200 A Current - Reverse Leakage @ Vr: 25 µA @ 400 V |
товару немає в наявності |
В кошику од. на суму грн. | ||||||
|
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MURTA40040R | GeneSiC Semiconductor |
Description: DIODE MODULE GP 400V 200A 3TOWER Packaging: Bulk Package / Case: Three Tower Mounting Type: Chassis Mount Speed: Standard Recovery >500ns, > 200mA (Io) Technology: Standard Diode Configuration: 1 Pair Common Anode Current - Average Rectified (Io) (per Diode): 200A Supplier Device Package: Three Tower Operating Temperature - Junction: -55°C ~ 150°C Voltage - DC Reverse (Vr) (Max): 400 V Voltage - Forward (Vf) (Max) @ If: 1.3 V @ 200 A Current - Reverse Leakage @ Vr: 25 µA @ 400 V |
товару немає в наявності |
В кошику од. на суму грн. | ||||||
 |
MURTA40040R | GeneSiC Semiconductor |
Discrete Semiconductor Modules 400V 400A Si Super Fast Recovery |
товару немає в наявності |
В кошику од. на суму грн. | ||||||
 |
MURTA40060 | GeneSiC Semiconductor |
Discrete Semiconductor Modules 600V 400A Si Super Fast Recovery |
на замовлення 13 шт: термін постачання 21-30 дні (днів) |
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MURTA40060 | GeneSiC Semiconductor |
Description: DIODE MODULE GP 600V 200A 3TOWER Packaging: Bulk Package / Case: Three Tower Mounting Type: Chassis Mount Speed: Standard Recovery >500ns, > 200mA (Io) Technology: Standard Diode Configuration: 1 Pair Common Cathode Current - Average Rectified (Io) (per Diode): 200A Supplier Device Package: Three Tower Operating Temperature - Junction: -55°C ~ 150°C Voltage - DC Reverse (Vr) (Max): 600 V Voltage - Forward (Vf) (Max) @ If: 1.7 V @ 200 A Current - Reverse Leakage @ Vr: 25 µA @ 600 V |
товару немає в наявності |
В кошику од. на суму грн. | ||||||
|
|
MURTA40060R | GeneSiC Semiconductor |
Description: DIODE MODULE GP 600V 200A 3TOWER Packaging: Bulk Package / Case: Three Tower Mounting Type: Chassis Mount Speed: Standard Recovery >500ns, > 200mA (Io) Technology: Standard Diode Configuration: 1 Pair Common Anode Current - Average Rectified (Io) (per Diode): 200A Supplier Device Package: Three Tower Operating Temperature - Junction: -55°C ~ 150°C Voltage - DC Reverse (Vr) (Max): 600 V Voltage - Forward (Vf) (Max) @ If: 1.7 V @ 200 A Current - Reverse Leakage @ Vr: 25 µA @ 600 V |
товару немає в наявності |
В кошику од. на суму грн. | ||||||
 |
MURTA40060R | GeneSiC Semiconductor |
Discrete Semiconductor Modules 600V 400A Si Super Fast Recovery |
товару немає в наявності |
В кошику од. на суму грн. | ||||||
 |
MURTA500120 | GeneSiC Semiconductor |
Discrete Semiconductor Modules 1200V 500A Si Super Fast Recovery |
товару немає в наявності |
В кошику од. на суму грн. | ||||||
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MURTA500120 | GeneSiC Semiconductor |
Description: DIODE MODULE GP 1.2KV 3TOWER Packaging: Bulk Package / Case: Three Tower Mounting Type: Chassis Mount Speed: Standard Recovery >500ns, > 200mA (Io) Technology: Standard Diode Configuration: 1 Pair Common Cathode Current - Average Rectified (Io) (per Diode): 250A Supplier Device Package: Three Tower Operating Temperature - Junction: -55°C ~ 150°C Voltage - DC Reverse (Vr) (Max): 1200 V Voltage - Forward (Vf) (Max) @ If: 2.6 V @ 250 A Current - Reverse Leakage @ Vr: 25 µA @ 1200 V |
товару немає в наявності |
В кошику од. на суму грн. | ||||||
 |
MURTA500120R | GeneSiC Semiconductor |
Discrete Semiconductor Modules 1200V 500A Si Super Fast Recovery |
товару немає в наявності |
В кошику од. на суму грн. | ||||||
|
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MURTA500120R | GeneSiC Semiconductor |
Description: DIODE MODULE GP 1.2KV 3TOWER Packaging: Bulk Package / Case: Three Tower Mounting Type: Chassis Mount Speed: Standard Recovery >500ns, > 200mA (Io) Technology: Standard Diode Configuration: 1 Pair Common Anode Current - Average Rectified (Io) (per Diode): 250A Supplier Device Package: Three Tower Operating Temperature - Junction: -55°C ~ 150°C Voltage - DC Reverse (Vr) (Max): 1200 V Voltage - Forward (Vf) (Max) @ If: 2.6 V @ 250 A Current - Reverse Leakage @ Vr: 25 µA @ 1200 V |
товару немає в наявності |
В кошику од. на суму грн. | ||||||
 |
MURTA50020 | GeneSiC Semiconductor |
Discrete Semiconductor Modules SI S-FST RECOV H3TWR 200-600V500A 50P/35 |
товару немає в наявності |
В кошику од. на суму грн. | ||||||
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MURTA50020 | GeneSiC Semiconductor |
Description: DIODE MODULE GP 200V 250A 3TOWER Packaging: Bulk Package / Case: Three Tower Mounting Type: Chassis Mount Speed: Fast Recovery =< 500ns, > 200mA (Io) Reverse Recovery Time (trr): 150 ns Technology: Standard Diode Configuration: 1 Pair Common Cathode Current - Average Rectified (Io) (per Diode): 250A Supplier Device Package: Three Tower Operating Temperature - Junction: -55°C ~ 150°C Voltage - DC Reverse (Vr) (Max): 200 V Voltage - Forward (Vf) (Max) @ If: 1.3 V @ 250 A Current - Reverse Leakage @ Vr: 25 µA @ 50 V |
товару немає в наявності |
В кошику од. на суму грн. | ||||||
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MURTA50020R | GeneSiC Semiconductor |
Description: DIODE MODULE GP 200V 250A 3TOWER Packaging: Bulk Package / Case: Three Tower Mounting Type: Chassis Mount Speed: Fast Recovery =< 500ns, > 200mA (Io) Reverse Recovery Time (trr): 150 ns Technology: Standard Diode Configuration: 1 Pair Common Anode Current - Average Rectified (Io) (per Diode): 250A Supplier Device Package: Three Tower Operating Temperature - Junction: -55°C ~ 150°C Voltage - DC Reverse (Vr) (Max): 200 V Voltage - Forward (Vf) (Max) @ If: 1.3 V @ 250 A Current - Reverse Leakage @ Vr: 25 µA @ 50 V |
товару немає в наявності |
В кошику од. на суму грн. | ||||||
 |
MURTA50020R | GeneSiC Semiconductor |
Discrete Semiconductor Modules SI S-FST RECOV H3TWR 200-600V500A 50P/35 |
товару немає в наявності |
В кошику од. на суму грн. | ||||||
 |
MURTA50040 | GeneSiC Semiconductor |
Discrete Semiconductor Modules SI S-FST RECOV H3TWR 200-600V500A100P/71 |
товару немає в наявності |
В кошику од. на суму грн. | ||||||
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MURTA50040 | GeneSiC Semiconductor |
Description: DIODE MODULE GP 400V 250A 3TOWER Packaging: Bulk Package / Case: Three Tower Mounting Type: Chassis Mount Speed: Fast Recovery =< 500ns, > 200mA (Io) Reverse Recovery Time (trr): 150 ns Technology: Standard Diode Configuration: 1 Pair Common Cathode Current - Average Rectified (Io) (per Diode): 250A Supplier Device Package: Three Tower Operating Temperature - Junction: -55°C ~ 150°C Voltage - DC Reverse (Vr) (Max): 400 V Voltage - Forward (Vf) (Max) @ If: 1.5 V @ 250 A Current - Reverse Leakage @ Vr: 25 µA @ 50 V |
товару немає в наявності |
В кошику од. на суму грн. | ||||||
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MURTA50040R | GeneSiC Semiconductor |
Description: DIODE MODULE GP 400V 250A 3TOWER Packaging: Bulk Package / Case: Three Tower Mounting Type: Chassis Mount Speed: Fast Recovery =< 500ns, > 200mA (Io) Reverse Recovery Time (trr): 150 ns Technology: Standard Diode Configuration: 1 Pair Common Anode Current - Average Rectified (Io) (per Diode): 250A Supplier Device Package: Three Tower Operating Temperature - Junction: -55°C ~ 150°C Voltage - DC Reverse (Vr) (Max): 400 V Voltage - Forward (Vf) (Max) @ If: 1.5 V @ 250 A Current - Reverse Leakage @ Vr: 25 µA @ 50 V |
товару немає в наявності |
В кошику од. на суму грн. | ||||||
 |
MURTA50040R | GeneSiC Semiconductor |
Discrete Semiconductor Modules SI S-FST RECOV H3TWR 200-600V500A100P/71 |
товару немає в наявності |
В кошику од. на суму грн. | ||||||
 |
MURTA50060 | GeneSiC Semiconductor |
Discrete Semiconductor Modules SI S-FST RECOV H3TWR 50-600V500A200P/141 |
товару немає в наявності |
В кошику од. на суму грн. | ||||||
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MURTA50060 | GeneSiC Semiconductor |
Description: DIODE MODULE GP 600V 250A 3TOWER Packaging: Bulk Package / Case: Three Tower Mounting Type: Chassis Mount Speed: Fast Recovery =< 500ns, > 200mA (Io) Reverse Recovery Time (trr): 250 ns Technology: Standard Diode Configuration: 1 Pair Common Cathode Current - Average Rectified (Io) (per Diode): 250A Supplier Device Package: Three Tower Operating Temperature - Junction: -55°C ~ 150°C Voltage - DC Reverse (Vr) (Max): 600 V Voltage - Forward (Vf) (Max) @ If: 1.7 V @ 250 A Current - Reverse Leakage @ Vr: 25 µA @ 50 V |
товару немає в наявності |
В кошику од. на суму грн. | ||||||
 |
MURTA50060R | GeneSiC Semiconductor |
Discrete Semiconductor Modules SI S-FST RECOV H3TWR 50-600V500A200P/141 |
товару немає в наявності |
В кошику од. на суму грн. | ||||||
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MURTA50060R | GeneSiC Semiconductor |
Description: DIODE MODULE GP 600V 250A 3TOWER Packaging: Bulk Package / Case: Three Tower Mounting Type: Chassis Mount Speed: Fast Recovery =< 500ns, > 200mA (Io) Reverse Recovery Time (trr): 250 ns Technology: Standard Diode Configuration: 1 Pair Common Anode Current - Average Rectified (Io) (per Diode): 250A Supplier Device Package: Three Tower Operating Temperature - Junction: -55°C ~ 150°C Voltage - DC Reverse (Vr) (Max): 600 V Voltage - Forward (Vf) (Max) @ If: 1.7 V @ 250 A Current - Reverse Leakage @ Vr: 25 µA @ 50 V |
товару немає в наявності |
В кошику од. на суму грн. | ||||||
 |
MURTA600120 | GeneSiC Semiconductor |
Discrete Semiconductor Modules 1200V 600A Si Super Fast Recovery |
товару немає в наявності |
В кошику од. на суму грн. | ||||||
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MURTA600120 | GeneSiC Semiconductor |
Description: DIODE MODULE GP 1.2KV 3TOWER Packaging: Bulk Package / Case: Three Tower Mounting Type: Chassis Mount Speed: Standard Recovery >500ns, > 200mA (Io) Technology: Standard Diode Configuration: 1 Pair Common Cathode Current - Average Rectified (Io) (per Diode): 300A Supplier Device Package: Three Tower Operating Temperature - Junction: -55°C ~ 150°C Voltage - DC Reverse (Vr) (Max): 1200 V Voltage - Forward (Vf) (Max) @ If: 2.6 V @ 300 A Current - Reverse Leakage @ Vr: 25 µA @ 1200 V |
товару немає в наявності |
В кошику од. на суму грн. | ||||||
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MURTA600120R | GeneSiC Semiconductor |
Description: DIODE MODULE GP 1.2KV 3TOWER Packaging: Bulk Package / Case: Three Tower Mounting Type: Chassis Mount Speed: Standard Recovery >500ns, > 200mA (Io) Technology: Standard Diode Configuration: 1 Pair Common Anode Current - Average Rectified (Io) (per Diode): 300A Supplier Device Package: Three Tower Operating Temperature - Junction: -55°C ~ 150°C Voltage - DC Reverse (Vr) (Max): 1200 V Voltage - Forward (Vf) (Max) @ If: 2.6 V @ 300 A Current - Reverse Leakage @ Vr: 25 µA @ 1200 V |
товару немає в наявності |
В кошику од. на суму грн. | ||||||
 |
MURTA600120R | GeneSiC Semiconductor |
Discrete Semiconductor Modules 1200V 600A Si Super Fast Recovery |
товару немає в наявності |
В кошику од. на суму грн. | ||||||
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MURTA60020 | GeneSiC Semiconductor |
Discrete Semiconductor Modules SI S-FST RECOV H3TWR 200-600V600A 50P/35 |
товару немає в наявності |
В кошику од. на суму грн. |
| MURT40060R |
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Виробник: GeneSiC Semiconductor
Rectifiers SI S-FST RECOV 3TWR 50-600V400A600P/424R
Rectifiers SI S-FST RECOV 3TWR 50-600V400A600P/424R
товару немає в наявності
В кошику
од. на суму грн.
| MURTA200120 |
|
Виробник: GeneSiC Semiconductor
Diode Modules 1200V 200A Si Super Fast Recovery
Diode Modules 1200V 200A Si Super Fast Recovery
товару немає в наявності
В кошику
од. на суму грн.
| MURTA200120R |
|
Виробник: GeneSiC Semiconductor
Diode Modules 1200V 200A Si Super Fast Recovery
Diode Modules 1200V 200A Si Super Fast Recovery
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В кошику
од. на суму грн.
| MURTA20020 |
|
Виробник: GeneSiC Semiconductor
Diode Modules 200V 200A Si Super Fast Recovery
Diode Modules 200V 200A Si Super Fast Recovery
товару немає в наявності
В кошику
од. на суму грн.
| MURTA20020R |
|
Виробник: GeneSiC Semiconductor
Diode Modules 200V 200A Si Super Fast Recovery
Diode Modules 200V 200A Si Super Fast Recovery
товару немає в наявності
В кошику
од. на суму грн.
| MURTA20040 |
|
Виробник: GeneSiC Semiconductor
Diode Modules 400V 200A Si Super Fast Recovery
Diode Modules 400V 200A Si Super Fast Recovery
товару немає в наявності
В кошику
од. на суму грн.
| MURTA20040R |
|
Виробник: GeneSiC Semiconductor
Diode Modules 400V 200A Si Super Fast Recovery
Diode Modules 400V 200A Si Super Fast Recovery
товару немає в наявності
В кошику
од. на суму грн.
| MURTA20060 |
|
Виробник: GeneSiC Semiconductor
Diode Modules 600V 200A Si Super Fast Recovery
Diode Modules 600V 200A Si Super Fast Recovery
товару немає в наявності
В кошику
од. на суму грн.
| MURTA20060R |
|
Виробник: GeneSiC Semiconductor
Diode Modules 600V 200A Si Super Fast Recovery
Diode Modules 600V 200A Si Super Fast Recovery
товару немає в наявності
В кошику
од. на суму грн.
| MURTA300120 |
|
Виробник: GeneSiC Semiconductor
Description: DIODE MODULE GP 600V 150A 3TOWER
Packaging: Bulk
Package / Case: Three Tower
Mounting Type: Chassis Mount
Speed: Standard Recovery >500ns, > 200mA (Io)
Technology: Standard
Diode Configuration: 1 Pair Common Cathode
Current - Average Rectified (Io) (per Diode): 150A
Supplier Device Package: Three Tower
Operating Temperature - Junction: -55°C ~ 150°C
Voltage - DC Reverse (Vr) (Max): 600 V
Voltage - Forward (Vf) (Max) @ If: 2.6 V @ 150 A
Current - Reverse Leakage @ Vr: 25 µA @ 600 V
Description: DIODE MODULE GP 600V 150A 3TOWER
Packaging: Bulk
Package / Case: Three Tower
Mounting Type: Chassis Mount
Speed: Standard Recovery >500ns, > 200mA (Io)
Technology: Standard
Diode Configuration: 1 Pair Common Cathode
Current - Average Rectified (Io) (per Diode): 150A
Supplier Device Package: Three Tower
Operating Temperature - Junction: -55°C ~ 150°C
Voltage - DC Reverse (Vr) (Max): 600 V
Voltage - Forward (Vf) (Max) @ If: 2.6 V @ 150 A
Current - Reverse Leakage @ Vr: 25 µA @ 600 V
товару немає в наявності
В кошику
од. на суму грн.
| MURTA300120 |
|
Виробник: GeneSiC Semiconductor
Discrete Semiconductor Modules 1200V 300A Si Super Fast Recovery
Discrete Semiconductor Modules 1200V 300A Si Super Fast Recovery
товару немає в наявності
В кошику
од. на суму грн.
| MURTA300120R |
|
Виробник: GeneSiC Semiconductor
Description: DIODE MODULE GP 600V 150A 3TOWER
Packaging: Bulk
Package / Case: Three Tower
Mounting Type: Chassis Mount
Speed: Standard Recovery >500ns, > 200mA (Io)
Technology: Standard
Diode Configuration: 1 Pair Common Anode
Current - Average Rectified (Io) (per Diode): 150A
Supplier Device Package: Three Tower
Operating Temperature - Junction: -55°C ~ 150°C
Voltage - DC Reverse (Vr) (Max): 600 V
Voltage - Forward (Vf) (Max) @ If: 2.6 V @ 150 A
Current - Reverse Leakage @ Vr: 25 µA @ 600 V
Description: DIODE MODULE GP 600V 150A 3TOWER
Packaging: Bulk
Package / Case: Three Tower
Mounting Type: Chassis Mount
Speed: Standard Recovery >500ns, > 200mA (Io)
Technology: Standard
Diode Configuration: 1 Pair Common Anode
Current - Average Rectified (Io) (per Diode): 150A
Supplier Device Package: Three Tower
Operating Temperature - Junction: -55°C ~ 150°C
Voltage - DC Reverse (Vr) (Max): 600 V
Voltage - Forward (Vf) (Max) @ If: 2.6 V @ 150 A
Current - Reverse Leakage @ Vr: 25 µA @ 600 V
товару немає в наявності
В кошику
од. на суму грн.
| MURTA300120R |
|
Виробник: GeneSiC Semiconductor
Discrete Semiconductor Modules 1200V 300A Si Super Fast Recovery
Discrete Semiconductor Modules 1200V 300A Si Super Fast Recovery
товару немає в наявності
В кошику
од. на суму грн.
| MURTA30020 |
|
Виробник: GeneSiC Semiconductor
Discrete Semiconductor Modules 200V 300A Si Super Fast Recovery
Discrete Semiconductor Modules 200V 300A Si Super Fast Recovery
товару немає в наявності
В кошику
од. на суму грн.
| MURTA30020 |
|
Виробник: GeneSiC Semiconductor
Description: DIODE MODULE GP 200V 150A 3TOWER
Packaging: Bulk
Package / Case: Three Tower
Mounting Type: Chassis Mount
Speed: Standard Recovery >500ns, > 200mA (Io)
Technology: Standard
Diode Configuration: 1 Pair Common Cathode
Current - Average Rectified (Io) (per Diode): 150A
Supplier Device Package: Three Tower
Operating Temperature - Junction: -55°C ~ 150°C
Voltage - DC Reverse (Vr) (Max): 200 V
Voltage - Forward (Vf) (Max) @ If: 1 V @ 150 A
Current - Reverse Leakage @ Vr: 25 µA @ 200 V
Description: DIODE MODULE GP 200V 150A 3TOWER
Packaging: Bulk
Package / Case: Three Tower
Mounting Type: Chassis Mount
Speed: Standard Recovery >500ns, > 200mA (Io)
Technology: Standard
Diode Configuration: 1 Pair Common Cathode
Current - Average Rectified (Io) (per Diode): 150A
Supplier Device Package: Three Tower
Operating Temperature - Junction: -55°C ~ 150°C
Voltage - DC Reverse (Vr) (Max): 200 V
Voltage - Forward (Vf) (Max) @ If: 1 V @ 150 A
Current - Reverse Leakage @ Vr: 25 µA @ 200 V
товару немає в наявності
В кошику
од. на суму грн.
| MURTA30020R |
|
Виробник: GeneSiC Semiconductor
Discrete Semiconductor Modules 200V 300A Si Super Fast Recovery
Discrete Semiconductor Modules 200V 300A Si Super Fast Recovery
товару немає в наявності
В кошику
од. на суму грн.
| MURTA30020R |
|
Виробник: GeneSiC Semiconductor
Description: DIODE MODULE GP 200V 150A 3TOWER
Packaging: Bulk
Package / Case: Three Tower
Mounting Type: Chassis Mount
Speed: Standard Recovery >500ns, > 200mA (Io)
Technology: Standard
Diode Configuration: 1 Pair Common Anode
Current - Average Rectified (Io) (per Diode): 150A
Supplier Device Package: Three Tower
Operating Temperature - Junction: -55°C ~ 150°C
Voltage - DC Reverse (Vr) (Max): 200 V
Voltage - Forward (Vf) (Max) @ If: 1 V @ 150 A
Current - Reverse Leakage @ Vr: 25 µA @ 200 V
Description: DIODE MODULE GP 200V 150A 3TOWER
Packaging: Bulk
Package / Case: Three Tower
Mounting Type: Chassis Mount
Speed: Standard Recovery >500ns, > 200mA (Io)
Technology: Standard
Diode Configuration: 1 Pair Common Anode
Current - Average Rectified (Io) (per Diode): 150A
Supplier Device Package: Three Tower
Operating Temperature - Junction: -55°C ~ 150°C
Voltage - DC Reverse (Vr) (Max): 200 V
Voltage - Forward (Vf) (Max) @ If: 1 V @ 150 A
Current - Reverse Leakage @ Vr: 25 µA @ 200 V
товару немає в наявності
В кошику
од. на суму грн.
| MURTA30040 |
|
Виробник: GeneSiC Semiconductor
Description: DIODE MODULE GP 400V 150A 3TOWER
Packaging: Bulk
Package / Case: Three Tower
Mounting Type: Chassis Mount
Speed: Standard Recovery >500ns, > 200mA (Io)
Technology: Standard
Diode Configuration: 1 Pair Common Cathode
Current - Average Rectified (Io) (per Diode): 150A
Supplier Device Package: Three Tower
Operating Temperature - Junction: -55°C ~ 150°C
Voltage - DC Reverse (Vr) (Max): 400 V
Voltage - Forward (Vf) (Max) @ If: 1.3 V @ 150 A
Current - Reverse Leakage @ Vr: 25 µA @ 400 V
Description: DIODE MODULE GP 400V 150A 3TOWER
Packaging: Bulk
Package / Case: Three Tower
Mounting Type: Chassis Mount
Speed: Standard Recovery >500ns, > 200mA (Io)
Technology: Standard
Diode Configuration: 1 Pair Common Cathode
Current - Average Rectified (Io) (per Diode): 150A
Supplier Device Package: Three Tower
Operating Temperature - Junction: -55°C ~ 150°C
Voltage - DC Reverse (Vr) (Max): 400 V
Voltage - Forward (Vf) (Max) @ If: 1.3 V @ 150 A
Current - Reverse Leakage @ Vr: 25 µA @ 400 V
товару немає в наявності
В кошику
од. на суму грн.
| MURTA30040 |
|
Виробник: GeneSiC Semiconductor
Discrete Semiconductor Modules 400V 300A Si Super Fast Recovery
Discrete Semiconductor Modules 400V 300A Si Super Fast Recovery
товару немає в наявності
В кошику
од. на суму грн.
| MURTA30040R |
|
Виробник: GeneSiC Semiconductor
Description: DIODE MODULE GP 400V 150A 3TOWER
Packaging: Bulk
Package / Case: Three Tower
Mounting Type: Chassis Mount
Speed: Standard Recovery >500ns, > 200mA (Io)
Technology: Standard
Diode Configuration: 1 Pair Common Anode
Current - Average Rectified (Io) (per Diode): 150A
Supplier Device Package: Three Tower
Operating Temperature - Junction: -55°C ~ 150°C
Voltage - DC Reverse (Vr) (Max): 400 V
Voltage - Forward (Vf) (Max) @ If: 1.3 V @ 150 A
Current - Reverse Leakage @ Vr: 25 µA @ 400 V
Description: DIODE MODULE GP 400V 150A 3TOWER
Packaging: Bulk
Package / Case: Three Tower
Mounting Type: Chassis Mount
Speed: Standard Recovery >500ns, > 200mA (Io)
Technology: Standard
Diode Configuration: 1 Pair Common Anode
Current - Average Rectified (Io) (per Diode): 150A
Supplier Device Package: Three Tower
Operating Temperature - Junction: -55°C ~ 150°C
Voltage - DC Reverse (Vr) (Max): 400 V
Voltage - Forward (Vf) (Max) @ If: 1.3 V @ 150 A
Current - Reverse Leakage @ Vr: 25 µA @ 400 V
товару немає в наявності
В кошику
од. на суму грн.
| MURTA30040R |
|
Виробник: GeneSiC Semiconductor
Discrete Semiconductor Modules 400V 300A Si Super Fast Recovery
Discrete Semiconductor Modules 400V 300A Si Super Fast Recovery
товару немає в наявності
В кошику
од. на суму грн.
| MURTA30060 |
|
Виробник: GeneSiC Semiconductor
Description: DIODE MODULE GP 600V 150A 3TOWER
Packaging: Bulk
Package / Case: Three Tower
Mounting Type: Chassis Mount
Speed: Standard Recovery >500ns, > 200mA (Io)
Technology: Standard
Diode Configuration: 1 Pair Common Cathode
Current - Average Rectified (Io) (per Diode): 150A
Supplier Device Package: Three Tower
Operating Temperature - Junction: -55°C ~ 150°C
Voltage - DC Reverse (Vr) (Max): 600 V
Voltage - Forward (Vf) (Max) @ If: 1.7 V @ 150 A
Current - Reverse Leakage @ Vr: 25 µA @ 600 V
Description: DIODE MODULE GP 600V 150A 3TOWER
Packaging: Bulk
Package / Case: Three Tower
Mounting Type: Chassis Mount
Speed: Standard Recovery >500ns, > 200mA (Io)
Technology: Standard
Diode Configuration: 1 Pair Common Cathode
Current - Average Rectified (Io) (per Diode): 150A
Supplier Device Package: Three Tower
Operating Temperature - Junction: -55°C ~ 150°C
Voltage - DC Reverse (Vr) (Max): 600 V
Voltage - Forward (Vf) (Max) @ If: 1.7 V @ 150 A
Current - Reverse Leakage @ Vr: 25 µA @ 600 V
товару немає в наявності
В кошику
од. на суму грн.
| MURTA30060 |
|
Виробник: GeneSiC Semiconductor
Diode Modules 600V 300A Si Super Fast Recovery
Diode Modules 600V 300A Si Super Fast Recovery
товару немає в наявності
В кошику
од. на суму грн.
| MURTA30060R |
|
Виробник: GeneSiC Semiconductor
Description: DIODE MODULE GP 600V 150A 3TOWER
Packaging: Bulk
Package / Case: Three Tower
Mounting Type: Chassis Mount
Speed: Standard Recovery >500ns, > 200mA (Io)
Technology: Standard
Diode Configuration: 1 Pair Common Anode
Current - Average Rectified (Io) (per Diode): 150A
Supplier Device Package: Three Tower
Operating Temperature - Junction: -55°C ~ 150°C
Voltage - DC Reverse (Vr) (Max): 600 V
Voltage - Forward (Vf) (Max) @ If: 1.7 V @ 150 A
Current - Reverse Leakage @ Vr: 25 µA @ 600 V
Description: DIODE MODULE GP 600V 150A 3TOWER
Packaging: Bulk
Package / Case: Three Tower
Mounting Type: Chassis Mount
Speed: Standard Recovery >500ns, > 200mA (Io)
Technology: Standard
Diode Configuration: 1 Pair Common Anode
Current - Average Rectified (Io) (per Diode): 150A
Supplier Device Package: Three Tower
Operating Temperature - Junction: -55°C ~ 150°C
Voltage - DC Reverse (Vr) (Max): 600 V
Voltage - Forward (Vf) (Max) @ If: 1.7 V @ 150 A
Current - Reverse Leakage @ Vr: 25 µA @ 600 V
товару немає в наявності
В кошику
од. на суму грн.
| MURTA30060R |
|
Виробник: GeneSiC Semiconductor
Diode Modules 600V 300A Si Super Fast Recovery
Diode Modules 600V 300A Si Super Fast Recovery
товару немає в наявності
В кошику
од. на суму грн.
| MURTA400120 |
|
Виробник: GeneSiC Semiconductor
Diode Modules 1200V 400A Si Super Fast Recovery
Diode Modules 1200V 400A Si Super Fast Recovery
товару немає в наявності
В кошику
од. на суму грн.
| MURTA400120R |
|
Виробник: GeneSiC Semiconductor
Diode Modules 1200V 400A Si Super Fast Recovery
Diode Modules 1200V 400A Si Super Fast Recovery
товару немає в наявності
В кошику
од. на суму грн.
| MURTA40020 |
|
Виробник: GeneSiC Semiconductor
Description: DIODE MODULE GP 200V 200A 3TOWER
Packaging: Bulk
Package / Case: Three Tower
Mounting Type: Chassis Mount
Speed: Standard Recovery >500ns, > 200mA (Io)
Technology: Standard
Diode Configuration: 1 Pair Common Cathode
Current - Average Rectified (Io) (per Diode): 200A
Supplier Device Package: Three Tower
Operating Temperature - Junction: -55°C ~ 150°C
Voltage - DC Reverse (Vr) (Max): 200 V
Voltage - Forward (Vf) (Max) @ If: 1.3 V @ 200 A
Current - Reverse Leakage @ Vr: 25 µA @ 200 V
Description: DIODE MODULE GP 200V 200A 3TOWER
Packaging: Bulk
Package / Case: Three Tower
Mounting Type: Chassis Mount
Speed: Standard Recovery >500ns, > 200mA (Io)
Technology: Standard
Diode Configuration: 1 Pair Common Cathode
Current - Average Rectified (Io) (per Diode): 200A
Supplier Device Package: Three Tower
Operating Temperature - Junction: -55°C ~ 150°C
Voltage - DC Reverse (Vr) (Max): 200 V
Voltage - Forward (Vf) (Max) @ If: 1.3 V @ 200 A
Current - Reverse Leakage @ Vr: 25 µA @ 200 V
товару немає в наявності
В кошику
од. на суму грн.
| MURTA40020 |
|
Виробник: GeneSiC Semiconductor
Discrete Semiconductor Modules 200V 400A Si Super Fast Recovery
Discrete Semiconductor Modules 200V 400A Si Super Fast Recovery
товару немає в наявності
В кошику
од. на суму грн.
| MURTA40020R |
|
Виробник: GeneSiC Semiconductor
Description: DIODE MODULE GP 200V 200A 3TOWER
Packaging: Bulk
Package / Case: Three Tower
Mounting Type: Chassis Mount
Speed: Standard Recovery >500ns, > 200mA (Io)
Technology: Standard
Diode Configuration: 1 Pair Common Anode
Current - Average Rectified (Io) (per Diode): 200A
Supplier Device Package: Three Tower
Operating Temperature - Junction: -55°C ~ 150°C
Voltage - DC Reverse (Vr) (Max): 200 V
Voltage - Forward (Vf) (Max) @ If: 1.3 V @ 200 A
Current - Reverse Leakage @ Vr: 25 µA @ 200 V
Description: DIODE MODULE GP 200V 200A 3TOWER
Packaging: Bulk
Package / Case: Three Tower
Mounting Type: Chassis Mount
Speed: Standard Recovery >500ns, > 200mA (Io)
Technology: Standard
Diode Configuration: 1 Pair Common Anode
Current - Average Rectified (Io) (per Diode): 200A
Supplier Device Package: Three Tower
Operating Temperature - Junction: -55°C ~ 150°C
Voltage - DC Reverse (Vr) (Max): 200 V
Voltage - Forward (Vf) (Max) @ If: 1.3 V @ 200 A
Current - Reverse Leakage @ Vr: 25 µA @ 200 V
товару немає в наявності
В кошику
од. на суму грн.
| MURTA40020R |
|
Виробник: GeneSiC Semiconductor
Discrete Semiconductor Modules 200V 400A Si Super Fast Recovery
Discrete Semiconductor Modules 200V 400A Si Super Fast Recovery
товару немає в наявності
В кошику
од. на суму грн.
| MURTA40040 |
|
Виробник: GeneSiC Semiconductor
Discrete Semiconductor Modules 400V 400A Si Super Fast Recovery
Discrete Semiconductor Modules 400V 400A Si Super Fast Recovery
товару немає в наявності
В кошику
од. на суму грн.
| MURTA40040 |
|
Виробник: GeneSiC Semiconductor
Description: DIODE MODULE GP 400V 200A 3TOWER
Packaging: Bulk
Package / Case: Three Tower
Mounting Type: Chassis Mount
Speed: Standard Recovery >500ns, > 200mA (Io)
Technology: Standard
Diode Configuration: 1 Pair Common Cathode
Current - Average Rectified (Io) (per Diode): 200A
Supplier Device Package: Three Tower
Operating Temperature - Junction: -55°C ~ 150°C
Voltage - DC Reverse (Vr) (Max): 400 V
Voltage - Forward (Vf) (Max) @ If: 1.3 V @ 200 A
Current - Reverse Leakage @ Vr: 25 µA @ 400 V
Description: DIODE MODULE GP 400V 200A 3TOWER
Packaging: Bulk
Package / Case: Three Tower
Mounting Type: Chassis Mount
Speed: Standard Recovery >500ns, > 200mA (Io)
Technology: Standard
Diode Configuration: 1 Pair Common Cathode
Current - Average Rectified (Io) (per Diode): 200A
Supplier Device Package: Three Tower
Operating Temperature - Junction: -55°C ~ 150°C
Voltage - DC Reverse (Vr) (Max): 400 V
Voltage - Forward (Vf) (Max) @ If: 1.3 V @ 200 A
Current - Reverse Leakage @ Vr: 25 µA @ 400 V
товару немає в наявності
В кошику
од. на суму грн.
| MURTA40040R |
|
Виробник: GeneSiC Semiconductor
Description: DIODE MODULE GP 400V 200A 3TOWER
Packaging: Bulk
Package / Case: Three Tower
Mounting Type: Chassis Mount
Speed: Standard Recovery >500ns, > 200mA (Io)
Technology: Standard
Diode Configuration: 1 Pair Common Anode
Current - Average Rectified (Io) (per Diode): 200A
Supplier Device Package: Three Tower
Operating Temperature - Junction: -55°C ~ 150°C
Voltage - DC Reverse (Vr) (Max): 400 V
Voltage - Forward (Vf) (Max) @ If: 1.3 V @ 200 A
Current - Reverse Leakage @ Vr: 25 µA @ 400 V
Description: DIODE MODULE GP 400V 200A 3TOWER
Packaging: Bulk
Package / Case: Three Tower
Mounting Type: Chassis Mount
Speed: Standard Recovery >500ns, > 200mA (Io)
Technology: Standard
Diode Configuration: 1 Pair Common Anode
Current - Average Rectified (Io) (per Diode): 200A
Supplier Device Package: Three Tower
Operating Temperature - Junction: -55°C ~ 150°C
Voltage - DC Reverse (Vr) (Max): 400 V
Voltage - Forward (Vf) (Max) @ If: 1.3 V @ 200 A
Current - Reverse Leakage @ Vr: 25 µA @ 400 V
товару немає в наявності
В кошику
од. на суму грн.
| MURTA40040R |
|
Виробник: GeneSiC Semiconductor
Discrete Semiconductor Modules 400V 400A Si Super Fast Recovery
Discrete Semiconductor Modules 400V 400A Si Super Fast Recovery
товару немає в наявності
В кошику
од. на суму грн.
| MURTA40060 |
|
Виробник: GeneSiC Semiconductor
Discrete Semiconductor Modules 600V 400A Si Super Fast Recovery
Discrete Semiconductor Modules 600V 400A Si Super Fast Recovery
на замовлення 13 шт:
термін постачання 21-30 дні (днів)| Кількість | Ціна |
|---|---|
| 1+ | 13431.45 грн |
| 10+ | 11978.20 грн |
| 24+ | 10415.12 грн |
| MURTA40060 |
|
Виробник: GeneSiC Semiconductor
Description: DIODE MODULE GP 600V 200A 3TOWER
Packaging: Bulk
Package / Case: Three Tower
Mounting Type: Chassis Mount
Speed: Standard Recovery >500ns, > 200mA (Io)
Technology: Standard
Diode Configuration: 1 Pair Common Cathode
Current - Average Rectified (Io) (per Diode): 200A
Supplier Device Package: Three Tower
Operating Temperature - Junction: -55°C ~ 150°C
Voltage - DC Reverse (Vr) (Max): 600 V
Voltage - Forward (Vf) (Max) @ If: 1.7 V @ 200 A
Current - Reverse Leakage @ Vr: 25 µA @ 600 V
Description: DIODE MODULE GP 600V 200A 3TOWER
Packaging: Bulk
Package / Case: Three Tower
Mounting Type: Chassis Mount
Speed: Standard Recovery >500ns, > 200mA (Io)
Technology: Standard
Diode Configuration: 1 Pair Common Cathode
Current - Average Rectified (Io) (per Diode): 200A
Supplier Device Package: Three Tower
Operating Temperature - Junction: -55°C ~ 150°C
Voltage - DC Reverse (Vr) (Max): 600 V
Voltage - Forward (Vf) (Max) @ If: 1.7 V @ 200 A
Current - Reverse Leakage @ Vr: 25 µA @ 600 V
товару немає в наявності
В кошику
од. на суму грн.
| MURTA40060R |
|
Виробник: GeneSiC Semiconductor
Description: DIODE MODULE GP 600V 200A 3TOWER
Packaging: Bulk
Package / Case: Three Tower
Mounting Type: Chassis Mount
Speed: Standard Recovery >500ns, > 200mA (Io)
Technology: Standard
Diode Configuration: 1 Pair Common Anode
Current - Average Rectified (Io) (per Diode): 200A
Supplier Device Package: Three Tower
Operating Temperature - Junction: -55°C ~ 150°C
Voltage - DC Reverse (Vr) (Max): 600 V
Voltage - Forward (Vf) (Max) @ If: 1.7 V @ 200 A
Current - Reverse Leakage @ Vr: 25 µA @ 600 V
Description: DIODE MODULE GP 600V 200A 3TOWER
Packaging: Bulk
Package / Case: Three Tower
Mounting Type: Chassis Mount
Speed: Standard Recovery >500ns, > 200mA (Io)
Technology: Standard
Diode Configuration: 1 Pair Common Anode
Current - Average Rectified (Io) (per Diode): 200A
Supplier Device Package: Three Tower
Operating Temperature - Junction: -55°C ~ 150°C
Voltage - DC Reverse (Vr) (Max): 600 V
Voltage - Forward (Vf) (Max) @ If: 1.7 V @ 200 A
Current - Reverse Leakage @ Vr: 25 µA @ 600 V
товару немає в наявності
В кошику
од. на суму грн.
| MURTA40060R |
|
Виробник: GeneSiC Semiconductor
Discrete Semiconductor Modules 600V 400A Si Super Fast Recovery
Discrete Semiconductor Modules 600V 400A Si Super Fast Recovery
товару немає в наявності
В кошику
од. на суму грн.
| MURTA500120 |
|
Виробник: GeneSiC Semiconductor
Discrete Semiconductor Modules 1200V 500A Si Super Fast Recovery
Discrete Semiconductor Modules 1200V 500A Si Super Fast Recovery
товару немає в наявності
В кошику
од. на суму грн.
| MURTA500120 |
|
Виробник: GeneSiC Semiconductor
Description: DIODE MODULE GP 1.2KV 3TOWER
Packaging: Bulk
Package / Case: Three Tower
Mounting Type: Chassis Mount
Speed: Standard Recovery >500ns, > 200mA (Io)
Technology: Standard
Diode Configuration: 1 Pair Common Cathode
Current - Average Rectified (Io) (per Diode): 250A
Supplier Device Package: Three Tower
Operating Temperature - Junction: -55°C ~ 150°C
Voltage - DC Reverse (Vr) (Max): 1200 V
Voltage - Forward (Vf) (Max) @ If: 2.6 V @ 250 A
Current - Reverse Leakage @ Vr: 25 µA @ 1200 V
Description: DIODE MODULE GP 1.2KV 3TOWER
Packaging: Bulk
Package / Case: Three Tower
Mounting Type: Chassis Mount
Speed: Standard Recovery >500ns, > 200mA (Io)
Technology: Standard
Diode Configuration: 1 Pair Common Cathode
Current - Average Rectified (Io) (per Diode): 250A
Supplier Device Package: Three Tower
Operating Temperature - Junction: -55°C ~ 150°C
Voltage - DC Reverse (Vr) (Max): 1200 V
Voltage - Forward (Vf) (Max) @ If: 2.6 V @ 250 A
Current - Reverse Leakage @ Vr: 25 µA @ 1200 V
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| MURTA500120R |
|
Виробник: GeneSiC Semiconductor
Discrete Semiconductor Modules 1200V 500A Si Super Fast Recovery
Discrete Semiconductor Modules 1200V 500A Si Super Fast Recovery
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В кошику
од. на суму грн.
| MURTA500120R |
|
Виробник: GeneSiC Semiconductor
Description: DIODE MODULE GP 1.2KV 3TOWER
Packaging: Bulk
Package / Case: Three Tower
Mounting Type: Chassis Mount
Speed: Standard Recovery >500ns, > 200mA (Io)
Technology: Standard
Diode Configuration: 1 Pair Common Anode
Current - Average Rectified (Io) (per Diode): 250A
Supplier Device Package: Three Tower
Operating Temperature - Junction: -55°C ~ 150°C
Voltage - DC Reverse (Vr) (Max): 1200 V
Voltage - Forward (Vf) (Max) @ If: 2.6 V @ 250 A
Current - Reverse Leakage @ Vr: 25 µA @ 1200 V
Description: DIODE MODULE GP 1.2KV 3TOWER
Packaging: Bulk
Package / Case: Three Tower
Mounting Type: Chassis Mount
Speed: Standard Recovery >500ns, > 200mA (Io)
Technology: Standard
Diode Configuration: 1 Pair Common Anode
Current - Average Rectified (Io) (per Diode): 250A
Supplier Device Package: Three Tower
Operating Temperature - Junction: -55°C ~ 150°C
Voltage - DC Reverse (Vr) (Max): 1200 V
Voltage - Forward (Vf) (Max) @ If: 2.6 V @ 250 A
Current - Reverse Leakage @ Vr: 25 µA @ 1200 V
товару немає в наявності
В кошику
од. на суму грн.
| MURTA50020 |
|
Виробник: GeneSiC Semiconductor
Discrete Semiconductor Modules SI S-FST RECOV H3TWR 200-600V500A 50P/35
Discrete Semiconductor Modules SI S-FST RECOV H3TWR 200-600V500A 50P/35
товару немає в наявності
В кошику
од. на суму грн.
| MURTA50020 |
|
Виробник: GeneSiC Semiconductor
Description: DIODE MODULE GP 200V 250A 3TOWER
Packaging: Bulk
Package / Case: Three Tower
Mounting Type: Chassis Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 150 ns
Technology: Standard
Diode Configuration: 1 Pair Common Cathode
Current - Average Rectified (Io) (per Diode): 250A
Supplier Device Package: Three Tower
Operating Temperature - Junction: -55°C ~ 150°C
Voltage - DC Reverse (Vr) (Max): 200 V
Voltage - Forward (Vf) (Max) @ If: 1.3 V @ 250 A
Current - Reverse Leakage @ Vr: 25 µA @ 50 V
Description: DIODE MODULE GP 200V 250A 3TOWER
Packaging: Bulk
Package / Case: Three Tower
Mounting Type: Chassis Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 150 ns
Technology: Standard
Diode Configuration: 1 Pair Common Cathode
Current - Average Rectified (Io) (per Diode): 250A
Supplier Device Package: Three Tower
Operating Temperature - Junction: -55°C ~ 150°C
Voltage - DC Reverse (Vr) (Max): 200 V
Voltage - Forward (Vf) (Max) @ If: 1.3 V @ 250 A
Current - Reverse Leakage @ Vr: 25 µA @ 50 V
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В кошику
од. на суму грн.
| MURTA50020R |
|
Виробник: GeneSiC Semiconductor
Description: DIODE MODULE GP 200V 250A 3TOWER
Packaging: Bulk
Package / Case: Three Tower
Mounting Type: Chassis Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 150 ns
Technology: Standard
Diode Configuration: 1 Pair Common Anode
Current - Average Rectified (Io) (per Diode): 250A
Supplier Device Package: Three Tower
Operating Temperature - Junction: -55°C ~ 150°C
Voltage - DC Reverse (Vr) (Max): 200 V
Voltage - Forward (Vf) (Max) @ If: 1.3 V @ 250 A
Current - Reverse Leakage @ Vr: 25 µA @ 50 V
Description: DIODE MODULE GP 200V 250A 3TOWER
Packaging: Bulk
Package / Case: Three Tower
Mounting Type: Chassis Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 150 ns
Technology: Standard
Diode Configuration: 1 Pair Common Anode
Current - Average Rectified (Io) (per Diode): 250A
Supplier Device Package: Three Tower
Operating Temperature - Junction: -55°C ~ 150°C
Voltage - DC Reverse (Vr) (Max): 200 V
Voltage - Forward (Vf) (Max) @ If: 1.3 V @ 250 A
Current - Reverse Leakage @ Vr: 25 µA @ 50 V
товару немає в наявності
В кошику
од. на суму грн.
| MURTA50020R |
|
Виробник: GeneSiC Semiconductor
Discrete Semiconductor Modules SI S-FST RECOV H3TWR 200-600V500A 50P/35
Discrete Semiconductor Modules SI S-FST RECOV H3TWR 200-600V500A 50P/35
товару немає в наявності
В кошику
од. на суму грн.
| MURTA50040 |
|
Виробник: GeneSiC Semiconductor
Discrete Semiconductor Modules SI S-FST RECOV H3TWR 200-600V500A100P/71
Discrete Semiconductor Modules SI S-FST RECOV H3TWR 200-600V500A100P/71
товару немає в наявності
В кошику
од. на суму грн.
| MURTA50040 |
|
Виробник: GeneSiC Semiconductor
Description: DIODE MODULE GP 400V 250A 3TOWER
Packaging: Bulk
Package / Case: Three Tower
Mounting Type: Chassis Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 150 ns
Technology: Standard
Diode Configuration: 1 Pair Common Cathode
Current - Average Rectified (Io) (per Diode): 250A
Supplier Device Package: Three Tower
Operating Temperature - Junction: -55°C ~ 150°C
Voltage - DC Reverse (Vr) (Max): 400 V
Voltage - Forward (Vf) (Max) @ If: 1.5 V @ 250 A
Current - Reverse Leakage @ Vr: 25 µA @ 50 V
Description: DIODE MODULE GP 400V 250A 3TOWER
Packaging: Bulk
Package / Case: Three Tower
Mounting Type: Chassis Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 150 ns
Technology: Standard
Diode Configuration: 1 Pair Common Cathode
Current - Average Rectified (Io) (per Diode): 250A
Supplier Device Package: Three Tower
Operating Temperature - Junction: -55°C ~ 150°C
Voltage - DC Reverse (Vr) (Max): 400 V
Voltage - Forward (Vf) (Max) @ If: 1.5 V @ 250 A
Current - Reverse Leakage @ Vr: 25 µA @ 50 V
товару немає в наявності
В кошику
од. на суму грн.
| MURTA50040R |
|
Виробник: GeneSiC Semiconductor
Description: DIODE MODULE GP 400V 250A 3TOWER
Packaging: Bulk
Package / Case: Three Tower
Mounting Type: Chassis Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 150 ns
Technology: Standard
Diode Configuration: 1 Pair Common Anode
Current - Average Rectified (Io) (per Diode): 250A
Supplier Device Package: Three Tower
Operating Temperature - Junction: -55°C ~ 150°C
Voltage - DC Reverse (Vr) (Max): 400 V
Voltage - Forward (Vf) (Max) @ If: 1.5 V @ 250 A
Current - Reverse Leakage @ Vr: 25 µA @ 50 V
Description: DIODE MODULE GP 400V 250A 3TOWER
Packaging: Bulk
Package / Case: Three Tower
Mounting Type: Chassis Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 150 ns
Technology: Standard
Diode Configuration: 1 Pair Common Anode
Current - Average Rectified (Io) (per Diode): 250A
Supplier Device Package: Three Tower
Operating Temperature - Junction: -55°C ~ 150°C
Voltage - DC Reverse (Vr) (Max): 400 V
Voltage - Forward (Vf) (Max) @ If: 1.5 V @ 250 A
Current - Reverse Leakage @ Vr: 25 µA @ 50 V
товару немає в наявності
В кошику
од. на суму грн.
| MURTA50040R |
|
Виробник: GeneSiC Semiconductor
Discrete Semiconductor Modules SI S-FST RECOV H3TWR 200-600V500A100P/71
Discrete Semiconductor Modules SI S-FST RECOV H3TWR 200-600V500A100P/71
товару немає в наявності
В кошику
од. на суму грн.
| MURTA50060 |
|
Виробник: GeneSiC Semiconductor
Discrete Semiconductor Modules SI S-FST RECOV H3TWR 50-600V500A200P/141
Discrete Semiconductor Modules SI S-FST RECOV H3TWR 50-600V500A200P/141
товару немає в наявності
В кошику
од. на суму грн.
| MURTA50060 |
|
Виробник: GeneSiC Semiconductor
Description: DIODE MODULE GP 600V 250A 3TOWER
Packaging: Bulk
Package / Case: Three Tower
Mounting Type: Chassis Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 250 ns
Technology: Standard
Diode Configuration: 1 Pair Common Cathode
Current - Average Rectified (Io) (per Diode): 250A
Supplier Device Package: Three Tower
Operating Temperature - Junction: -55°C ~ 150°C
Voltage - DC Reverse (Vr) (Max): 600 V
Voltage - Forward (Vf) (Max) @ If: 1.7 V @ 250 A
Current - Reverse Leakage @ Vr: 25 µA @ 50 V
Description: DIODE MODULE GP 600V 250A 3TOWER
Packaging: Bulk
Package / Case: Three Tower
Mounting Type: Chassis Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 250 ns
Technology: Standard
Diode Configuration: 1 Pair Common Cathode
Current - Average Rectified (Io) (per Diode): 250A
Supplier Device Package: Three Tower
Operating Temperature - Junction: -55°C ~ 150°C
Voltage - DC Reverse (Vr) (Max): 600 V
Voltage - Forward (Vf) (Max) @ If: 1.7 V @ 250 A
Current - Reverse Leakage @ Vr: 25 µA @ 50 V
товару немає в наявності
В кошику
од. на суму грн.
| MURTA50060R |
|
Виробник: GeneSiC Semiconductor
Discrete Semiconductor Modules SI S-FST RECOV H3TWR 50-600V500A200P/141
Discrete Semiconductor Modules SI S-FST RECOV H3TWR 50-600V500A200P/141
товару немає в наявності
В кошику
од. на суму грн.
| MURTA50060R |
|
Виробник: GeneSiC Semiconductor
Description: DIODE MODULE GP 600V 250A 3TOWER
Packaging: Bulk
Package / Case: Three Tower
Mounting Type: Chassis Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 250 ns
Technology: Standard
Diode Configuration: 1 Pair Common Anode
Current - Average Rectified (Io) (per Diode): 250A
Supplier Device Package: Three Tower
Operating Temperature - Junction: -55°C ~ 150°C
Voltage - DC Reverse (Vr) (Max): 600 V
Voltage - Forward (Vf) (Max) @ If: 1.7 V @ 250 A
Current - Reverse Leakage @ Vr: 25 µA @ 50 V
Description: DIODE MODULE GP 600V 250A 3TOWER
Packaging: Bulk
Package / Case: Three Tower
Mounting Type: Chassis Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 250 ns
Technology: Standard
Diode Configuration: 1 Pair Common Anode
Current - Average Rectified (Io) (per Diode): 250A
Supplier Device Package: Three Tower
Operating Temperature - Junction: -55°C ~ 150°C
Voltage - DC Reverse (Vr) (Max): 600 V
Voltage - Forward (Vf) (Max) @ If: 1.7 V @ 250 A
Current - Reverse Leakage @ Vr: 25 µA @ 50 V
товару немає в наявності
В кошику
од. на суму грн.
| MURTA600120 |
|
Виробник: GeneSiC Semiconductor
Discrete Semiconductor Modules 1200V 600A Si Super Fast Recovery
Discrete Semiconductor Modules 1200V 600A Si Super Fast Recovery
товару немає в наявності
В кошику
од. на суму грн.
| MURTA600120 |
|
Виробник: GeneSiC Semiconductor
Description: DIODE MODULE GP 1.2KV 3TOWER
Packaging: Bulk
Package / Case: Three Tower
Mounting Type: Chassis Mount
Speed: Standard Recovery >500ns, > 200mA (Io)
Technology: Standard
Diode Configuration: 1 Pair Common Cathode
Current - Average Rectified (Io) (per Diode): 300A
Supplier Device Package: Three Tower
Operating Temperature - Junction: -55°C ~ 150°C
Voltage - DC Reverse (Vr) (Max): 1200 V
Voltage - Forward (Vf) (Max) @ If: 2.6 V @ 300 A
Current - Reverse Leakage @ Vr: 25 µA @ 1200 V
Description: DIODE MODULE GP 1.2KV 3TOWER
Packaging: Bulk
Package / Case: Three Tower
Mounting Type: Chassis Mount
Speed: Standard Recovery >500ns, > 200mA (Io)
Technology: Standard
Diode Configuration: 1 Pair Common Cathode
Current - Average Rectified (Io) (per Diode): 300A
Supplier Device Package: Three Tower
Operating Temperature - Junction: -55°C ~ 150°C
Voltage - DC Reverse (Vr) (Max): 1200 V
Voltage - Forward (Vf) (Max) @ If: 2.6 V @ 300 A
Current - Reverse Leakage @ Vr: 25 µA @ 1200 V
товару немає в наявності
В кошику
од. на суму грн.
| MURTA600120R |
|
Виробник: GeneSiC Semiconductor
Description: DIODE MODULE GP 1.2KV 3TOWER
Packaging: Bulk
Package / Case: Three Tower
Mounting Type: Chassis Mount
Speed: Standard Recovery >500ns, > 200mA (Io)
Technology: Standard
Diode Configuration: 1 Pair Common Anode
Current - Average Rectified (Io) (per Diode): 300A
Supplier Device Package: Three Tower
Operating Temperature - Junction: -55°C ~ 150°C
Voltage - DC Reverse (Vr) (Max): 1200 V
Voltage - Forward (Vf) (Max) @ If: 2.6 V @ 300 A
Current - Reverse Leakage @ Vr: 25 µA @ 1200 V
Description: DIODE MODULE GP 1.2KV 3TOWER
Packaging: Bulk
Package / Case: Three Tower
Mounting Type: Chassis Mount
Speed: Standard Recovery >500ns, > 200mA (Io)
Technology: Standard
Diode Configuration: 1 Pair Common Anode
Current - Average Rectified (Io) (per Diode): 300A
Supplier Device Package: Three Tower
Operating Temperature - Junction: -55°C ~ 150°C
Voltage - DC Reverse (Vr) (Max): 1200 V
Voltage - Forward (Vf) (Max) @ If: 2.6 V @ 300 A
Current - Reverse Leakage @ Vr: 25 µA @ 1200 V
товару немає в наявності
В кошику
од. на суму грн.
| MURTA600120R |
|
Виробник: GeneSiC Semiconductor
Discrete Semiconductor Modules 1200V 600A Si Super Fast Recovery
Discrete Semiconductor Modules 1200V 600A Si Super Fast Recovery
товару немає в наявності
В кошику
од. на суму грн.
| MURTA60020 |
|
Виробник: GeneSiC Semiconductor
Discrete Semiconductor Modules SI S-FST RECOV H3TWR 200-600V600A 50P/35
Discrete Semiconductor Modules SI S-FST RECOV H3TWR 200-600V600A 50P/35
товару немає в наявності
В кошику
од. на суму грн.