Продукція > INFINEON TECHNOLOGIES > Всі товари виробника INFINEON TECHNOLOGIES (149800) > Сторінка 1265 з 2497
| Фото | Назва | Виробник | Інформація |
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| FP25R12W1T7B11BPSA1 | INFINEON TECHNOLOGIES |
 Category: IGBT modulesDescription: Module: IGBT; diode/transistor; buck chopper; Urmax: 1.2kV; Ic: 25A Semiconductor structure: diode/transistor Gate-emitter voltage: ±20V Collector current: 25A Pulsed collector current: 50A Electrical mounting: Press-in PCB Mechanical mounting: screw Type of module: IGBT Technology: EasyPIM™ 1B Topology: buck chopper; IGBT three-phase bridge; NTC thermistor; three-phase diode bridge Case: AG-EASY1B-2 Max. off-state voltage: 1.2kV кількість в упаковці: 1 шт |
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| FP30R06KE3BPSA1 | INFINEON TECHNOLOGIES |
Category: IGBT modules Description: Module: IGBT; diode/transistor; buck chopper; Urmax: 600V; Ic: 30A Max. off-state voltage: 0.6kV Semiconductor structure: diode/transistor Gate-emitter voltage: ±20V Collector current: 30A Pulsed collector current: 60A Application: Inverter Power dissipation: 125W Electrical mounting: Press-in PCB Mechanical mounting: screw Type of module: IGBT Technology: EconoPIM™ 2 Topology: buck chopper; IGBT three-phase bridge; NTC thermistor; three-phase diode bridge Case: AG-ECONO2C кількість в упаковці: 1 шт |
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| FP40R12KT3BOSA1 | INFINEON TECHNOLOGIES |
Category: IGBT modules Description: Module: IGBT; diode/transistor; buck chopper; Urmax: 1.2kV; Ic: 40A Type of semiconductor module: IGBT Semiconductor structure: diode/transistor Topology: buck chopper; IGBT three-phase bridge; NTC thermistor; three-phase diode bridge Max. off-state voltage: 1.2kV Collector current: 40A Case: AG-ECONO2-5 Application: Inverter Electrical mounting: Press-in PCB Gate-emitter voltage: ±20V Pulsed collector current: 80A Power dissipation: 210W Technology: EconoPIM™ 2 Mechanical mounting: screw кількість в упаковці: 1 шт |
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| FP50R06W2E3B11BOMA1 | INFINEON TECHNOLOGIES |
Category: IGBT modules Description: Module: IGBT; diode/transistor; buck chopper; Urmax: 600V; Ic: 50A Semiconductor structure: diode/transistor Gate-emitter voltage: ±20V Collector current: 50A Pulsed collector current: 100A Power dissipation: 175W Electrical mounting: Press-in PCB Mechanical mounting: screw Type of module: IGBT Technology: EasyPIM™ 2B Topology: buck chopper; IGBT three-phase bridge; NTC thermistor; three-phase diode bridge Case: AG-EASY2B-2 Max. off-state voltage: 0.6kV кількість в упаковці: 1 шт |
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| FP50R12KT3BOSA1 | INFINEON TECHNOLOGIES |
Category: IGBT modules Description: Diode/transistor; buck chopper,three-phase diode bridge; 280W Max. off-state voltage: 1.2kV Semiconductor structure: diode/transistor Gate-emitter voltage: ±20V Collector current: 50A Pulsed collector current: 100A Application: Inverter Power dissipation: 280W Electrical mounting: Press-in PCB Mechanical mounting: screw Technology: EconoPIM™ 2 Topology: buck chopper; IGBT three-phase bridge; NTC thermistor; three-phase diode bridge Type of semiconductor module: IGBT Case: AG-ECONO3-3 кількість в упаковці: 1 шт |
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FP75R12KT4 | INFINEON TECHNOLOGIES |
Category: IGBT modules Description: Module: IGBT; diode/transistor; buck chopper; Urmax: 1.2kV; Ic: 75A Type of semiconductor module: IGBT Semiconductor structure: diode/transistor Topology: buck chopper; IGBT three-phase bridge; NTC thermistor; three-phase diode bridge Max. off-state voltage: 1.2kV Collector current: 75A Case: AG-ECONO3-3 Application: Inverter Electrical mounting: Press-in PCB Gate-emitter voltage: ±20V Pulsed collector current: 150A Power dissipation: 385W Mechanical mounting: screw Technology: EconoPIM™ 3 кількість в упаковці: 1 шт |
на замовлення 6 шт: термін постачання 14-21 дні (днів) |
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| FS100R12W2T7B11BOMA1 | INFINEON TECHNOLOGIES |
Category: IGBT modules Description: Module: IGBT; transistor/transistor; IGBT three-phase bridge Semiconductor structure: transistor/transistor Gate-emitter voltage: ±20V Collector current: 100A Pulsed collector current: 200A Electrical mounting: Press-in PCB Mechanical mounting: screw Type of module: IGBT Technology: EasyPACK™ 2B Topology: IGBT three-phase bridge; NTC thermistor Case: AG-EASY2B-2 Max. off-state voltage: 1.2kV кількість в упаковці: 1 шт |
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| FS10R12VT3BOMA1 | INFINEON TECHNOLOGIES |
Category: IGBT modules Description: Transistor/transistor; IGBT three-phase bridge; Urmax: 1.2kV Max. off-state voltage: 1.2kV Semiconductor structure: transistor/transistor Gate-emitter voltage: ±20V Collector current: 10A Pulsed collector current: 20A Power dissipation: 64W Electrical mounting: Press-in PCB Technology: EasyPACK™ Topology: IGBT three-phase bridge Type of semiconductor module: IGBT Case: AG-EASY750-1 кількість в упаковці: 40 шт |
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| FS150R12KT4BOSA1 | INFINEON TECHNOLOGIES |
Category: IGBT modules Description: Module: IGBT; transistor/transistor; IGBT three-phase bridge Type of semiconductor module: IGBT Semiconductor structure: transistor/transistor Topology: IGBT three-phase bridge; NTC thermistor Max. off-state voltage: 1.2kV Collector current: 150A Case: AG-ECONO3-4 Electrical mounting: Press-in PCB Gate-emitter voltage: ±20V Pulsed collector current: 300A Power dissipation: 750W Technology: EconoPACK™ 3 Mechanical mounting: screw кількість в упаковці: 1 шт |
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| FS150R17PE4BOSA1 | INFINEON TECHNOLOGIES |
Category: IGBT modules Description: Module: IGBT; transistor/transistor; IGBT three-phase bridge Collector current: 150A Gate-emitter voltage: ±20V Semiconductor structure: transistor/transistor Max. off-state voltage: 1.7kV Electrical mounting: Press-Fit; screw Mechanical mounting: screw Type of module: IGBT Technology: EconoPACK™ 4 Case: AG-ECONO4-1 Topology: IGBT three-phase bridge; NTC thermistor Pulsed collector current: 300A кількість в упаковці: 1 шт |
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| FS15R12VT3BOMA1 | INFINEON TECHNOLOGIES |
FS15R12VT3 IGBT modules |
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| FS200R12KT4RB11BOSA1 | INFINEON TECHNOLOGIES |
Category: IGBT modules Description: Module: IGBT; transistor/transistor; IGBT three-phase bridge Semiconductor structure: transistor/transistor Gate-emitter voltage: ±20V Collector current: 200A Pulsed collector current: 400A Power dissipation: 1kW Electrical mounting: Press-in PCB Mechanical mounting: screw Type of module: IGBT Technology: EconoPACK™ 3 Topology: IGBT three-phase bridge; NTC thermistor Case: AG-ECONO3-4 Max. off-state voltage: 1.2kV кількість в упаковці: 1 шт |
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| FS50R12KE3BPSA1 | INFINEON TECHNOLOGIES |
Category: IGBT modules Description: Transistor/transistor; Urmax: 1.2kV; Ic: 50A; AG-ECONO2B; Inverter Max. off-state voltage: 1.2kV Semiconductor structure: transistor/transistor Gate-emitter voltage: ±20V Collector current: 50A Pulsed collector current: 100A Application: Inverter Power dissipation: 270W Electrical mounting: Press-in PCB Mechanical mounting: screw Technology: EconoPACK™ 2 Type of semiconductor module: IGBT Case: AG-ECONO2B кількість в упаковці: 1 шт |
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| FS75R12W2T4B11BOMA1 | INFINEON TECHNOLOGIES |
Category: IGBT modules Description: Module: IGBT; transistor/transistor; IGBT three-phase bridge Power dissipation: 375W Electrical mounting: Press-in PCB Mechanical mounting: screw Technology: EasyPACK™ 2B Topology: IGBT three-phase bridge; NTC thermistor Type of semiconductor module: IGBT Case: AG-EASY2B-2 Max. off-state voltage: 1.2kV Semiconductor structure: transistor/transistor Gate-emitter voltage: ±20V Collector current: 75A Pulsed collector current: 150A кількість в упаковці: 15 шт |
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| FS75R17KE3BOSA1 | INFINEON TECHNOLOGIES |
Category: IGBT modules Description: Module: IGBT; transistor/transistor; IGBT half-bridge x3; Ic: 75A Type of module: IGBT Semiconductor structure: transistor/transistor Topology: IGBT half-bridge x3; NTC thermistor Max. off-state voltage: 1.7kV Collector current: 75A Case: AG-ECONO3-4 Application: Inverter Electrical mounting: Press-in PCB Gate-emitter voltage: ±20V Pulsed collector current: 150A Power dissipation: 465W Mechanical mounting: screw кількість в упаковці: 10 шт |
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| FS820R08A6P2LBBPSA1 | INFINEON TECHNOLOGIES |
FS820R08A6P2LB IGBT modules |
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| FZ1000R33HE3BPSA1 | INFINEON TECHNOLOGIES |
FZ1000R33HE3BPSA1 IGBT modules |
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| FZ1400R33HE4BPSA1 | INFINEON TECHNOLOGIES |
FZ1400R33HE4BPSA1 IGBT modules |
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| FZ2000R33HE4BOSA1 | INFINEON TECHNOLOGIES |
Category: IGBT modules Description: Module: IGBT; transistor/transistor,common emitter; IGBT x3 Type of module: IGBT Semiconductor structure: common emitter; transistor/transistor Topology: IGBT x3 Max. off-state voltage: 3.3kV Collector current: 2kA Case: AG-IHVB190-3 Electrical mounting: screw Gate-emitter voltage: ±20V Pulsed collector current: 4kA Technology: TRENCHSTOP™ Mechanical mounting: screw кількість в упаковці: 1 шт |
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| FZ400R12KS4HOSA1 | INFINEON TECHNOLOGIES |
Category: IGBT modules Description: Module: IGBT; single transistor; Urmax: 1.2kV; Ic: 400A; AG-62MM Type of semiconductor module: IGBT Semiconductor structure: single transistor Max. off-state voltage: 1.2kV Case: AG-62MM Electrical mounting: screw Mechanical mounting: screw Power dissipation: 2.5kW Gate-emitter voltage: ±20V Collector current: 400A Pulsed collector current: 800A кількість в упаковці: 1 шт |
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| FZ400R17KE4HOSA1 | INFINEON TECHNOLOGIES |
FZ400R17KE4HOSA1 IGBT modules |
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FZ600R12KE3HOSA1 | INFINEON TECHNOLOGIES |
Category: IGBT modules Description: Module: IGBT; single transistor; Urmax: 1.2kV; Ic: 600A; AG-62MM Type of semiconductor module: IGBT Semiconductor structure: single transistor Max. off-state voltage: 1.2kV Case: AG-62MM Electrical mounting: screw Mechanical mounting: screw Power dissipation: 2.8kW Gate-emitter voltage: ±20V Collector current: 600A Pulsed collector current: 1.2kA кількість в упаковці: 1 шт |
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| FZ900R12KE4HOSA1 | INFINEON TECHNOLOGIES |
Category: IGBT modules Description: Module: IGBT; single transistor; Urmax: 1.2kV; Ic: 900A; AG-62MMES Type of semiconductor module: IGBT Semiconductor structure: single transistor Max. off-state voltage: 1.2kV Case: AG-62MMES Electrical mounting: screw Mechanical mounting: screw Power dissipation: 4.3kW Gate-emitter voltage: ±20V Collector current: 900A Pulsed collector current: 1.8kA кількість в упаковці: 1 шт |
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| IAUA170N10S5N031AUMA1 | INFINEON TECHNOLOGIES |
IAUA170N10S5N031 SMD N channel transistors |
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| IAUA180N04S5N012AUMA1 | INFINEON TECHNOLOGIES |
Category: SMD N channel transistors Description: Transistor: N-MOSFET; unipolar; 40V; 180A; Idm: 720A; 125W Type of transistor: N-MOSFET Polarisation: unipolar Drain-source voltage: 40V Drain current: 180A Pulsed drain current: 720A Power dissipation: 125W Case: PG-HSOF-5 Gate-source voltage: ±20V On-state resistance: 1.4mΩ Mounting: SMD Gate charge: 0.1µC Kind of package: reel; tape Kind of channel: enhancement Technology: OptiMOS™ 5 кількість в упаковці: 2000 шт |
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| IAUA180N08S5N026AUMA1 | INFINEON TECHNOLOGIES |
Category: SMD N channel transistors Description: Transistor: N-MOSFET; unipolar; 80V; 25A; Idm: 546A; 179W; PG-HSOF-5 Type of transistor: N-MOSFET Polarisation: unipolar Drain-source voltage: 80V Drain current: 25A Pulsed drain current: 546A Power dissipation: 179W Case: PG-HSOF-5 Gate-source voltage: ±20V On-state resistance: 3.6mΩ Mounting: SMD Gate charge: 87nC Kind of package: reel; tape Kind of channel: enhancement Technology: OptiMOS™ 5 кількість в упаковці: 2000 шт |
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| IAUA180N10S5N029AUMA1 | INFINEON TECHNOLOGIES |
Category: SMD N channel transistors Description: Transistor: N-MOSFET; unipolar; 100V; 24A; Idm: 561A; 221W Type of transistor: N-MOSFET Polarisation: unipolar Drain-source voltage: 100V Drain current: 24A Pulsed drain current: 561A Power dissipation: 221W Case: PG-HSOF-5 Gate-source voltage: ±20V On-state resistance: 3.4mΩ Mounting: SMD Gate charge: 105nC Kind of package: reel; tape Kind of channel: enhancement Technology: OptiMOS™ 5 кількість в упаковці: 2000 шт |
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| IAUA200N04S5N010AUMA1 | INFINEON TECHNOLOGIES |
IAUA200N04S5N010 SMD N channel transistors |
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| IAUA210N10S5N024AUMA1 | INFINEON TECHNOLOGIES |
IAUA210N10S5N024 SMD N channel transistors |
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| IAUA220N08S5N021AUMA1 | INFINEON TECHNOLOGIES |
IAUA220N08S5N021 SMD N channel transistors |
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| IAUA250N04S6N005AUMA1 | INFINEON TECHNOLOGIES |
IAUA250N04S6N005 SMD N channel transistors |
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| IAUA250N04S6N006AUMA1 | INFINEON TECHNOLOGIES | IAUA250N04S6N006 SMD N channel transistors |
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| IAUA250N04S6N007AUMA1 | INFINEON TECHNOLOGIES | IAUA250N04S6N007 SMD N channel transistors |
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| IAUA250N04S6N007EAUMA1 | INFINEON TECHNOLOGIES |
IAUA250N04S6N007E SMD N channel transistors |
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| IAUA250N04S6N008AUMA1 | INFINEON TECHNOLOGIES |
IAUA250N04S6N008 SMD N channel transistors |
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| IAUA250N08S5N018AUMA1 | INFINEON TECHNOLOGIES |
IAUA250N08S5N018 SMD N channel transistors |
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| IAUC100N04S6L014ATMA1 | INFINEON TECHNOLOGIES |
Category: SMD N channel transistors Description: Transistor: N-MOSFET; OptiMOS™ 6; unipolar; 40V; 100A; Idm: 400A Case: PG-TDSON-8 Mounting: SMD Kind of package: reel; tape Drain-source voltage: 40V Drain current: 100A On-state resistance: 2mΩ Type of transistor: N-MOSFET Power dissipation: 100W Polarisation: unipolar Gate charge: 65nC Technology: OptiMOS™ 6 Kind of channel: enhancement Gate-source voltage: ±16V Pulsed drain current: 400A кількість в упаковці: 5000 шт |
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| IAUC100N04S6L020ATMA1 | INFINEON TECHNOLOGIES |
Category: SMD N channel transistors Description: Transistor: N-MOSFET; OptiMOS™ 6; unipolar; 40V; 100A; Idm: 400A Case: PG-TDSON-8 Mounting: SMD Kind of package: reel; tape Drain-source voltage: 40V Drain current: 100A On-state resistance: 2.7mΩ Type of transistor: N-MOSFET Power dissipation: 75W Polarisation: unipolar Gate charge: 46nC Technology: OptiMOS™ 6 Kind of channel: enhancement Gate-source voltage: ±16V Pulsed drain current: 400A кількість в упаковці: 5000 шт |
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| IAUC100N04S6L025ATMA1 | INFINEON TECHNOLOGIES |
Category: SMD N channel transistors Description: Transistor: N-MOSFET; OptiMOS™ 6; unipolar; 40V; 83A; Idm: 400A; 62W Type of transistor: N-MOSFET Polarisation: unipolar Drain-source voltage: 40V Drain current: 83A Pulsed drain current: 400A Power dissipation: 62W Case: PG-TDSON-8 Gate-source voltage: ±16V On-state resistance: 3.6mΩ Mounting: SMD Gate charge: 34nC Kind of package: reel; tape Kind of channel: enhancement Technology: OptiMOS™ 6 кількість в упаковці: 5000 шт |
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| IAUC100N04S6N022ATMA1 | INFINEON TECHNOLOGIES |
Category: SMD N channel transistors Description: Transistor: N-MOSFET; OptiMOS™ 6; unipolar; 40V; 96A; Idm: 400A; 75W Type of transistor: N-MOSFET Polarisation: unipolar Drain-source voltage: 40V Drain current: 96A Pulsed drain current: 400A Power dissipation: 75W Case: PG-TDSON-8 Gate-source voltage: ±20V On-state resistance: 3mΩ Mounting: SMD Gate charge: 39nC Kind of package: reel; tape Kind of channel: enhancement Technology: OptiMOS™ 6 кількість в упаковці: 5000 шт |
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| IAUC100N04S6N028ATMA1 | INFINEON TECHNOLOGIES |
Category: SMD N channel transistors Description: Transistor: N-MOSFET; OptiMOS™ 6; unipolar; 40V; 77A; Idm: 400A; 62W Type of transistor: N-MOSFET Polarisation: unipolar Drain-source voltage: 40V Drain current: 77A Pulsed drain current: 400A Power dissipation: 62W Case: PG-TDSON-8 Gate-source voltage: ±20V On-state resistance: 3.9mΩ Mounting: SMD Gate charge: 29nC Kind of package: reel; tape Kind of channel: enhancement Technology: OptiMOS™ 6 кількість в упаковці: 5000 шт |
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| IAUC100N08S5N031ATMA1 | INFINEON TECHNOLOGIES |
Category: SMD N channel transistors Description: Transistor: N-MOSFET; unipolar; 80V; 100A; Idm: 400A; 167W Case: PG-TDSON-8 Technology: OptiMOS™ 5 Kind of channel: enhancement Gate-source voltage: ±20V Pulsed drain current: 400A Mounting: SMD Drain-source voltage: 80V Drain current: 100A On-state resistance: 3.1mΩ Type of transistor: N-MOSFET Power dissipation: 167W Polarisation: unipolar Kind of package: reel; tape кількість в упаковці: 5000 шт |
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| IAUC100N08S5N034ATMA1 | INFINEON TECHNOLOGIES |
Category: SMD N channel transistors Description: Transistor: N-MOSFET; unipolar; 80V; 22A; Idm: 400A; 136W Case: PG-TDSON-8 Technology: OptiMOS™ 5 Kind of channel: enhancement Gate-source voltage: ±20V Pulsed drain current: 400A Mounting: SMD Drain-source voltage: 80V Drain current: 22A On-state resistance: 4.8mΩ Type of transistor: N-MOSFET Power dissipation: 136W Polarisation: unipolar Kind of package: reel; tape Gate charge: 66nC кількість в упаковці: 5000 шт |
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| IAUC100N08S5N043ATMA1 | INFINEON TECHNOLOGIES |
Category: SMD N channel transistors Description: Transistor: N-MOSFET; unipolar; 80V; 76A; Idm: 400A; 120W Case: PG-TDSON-8 Technology: OptiMOS™ 5 Kind of channel: enhancement Gate-source voltage: ±20V Pulsed drain current: 400A Mounting: SMD Drain-source voltage: 80V Drain current: 76A On-state resistance: 4.3mΩ Type of transistor: N-MOSFET Power dissipation: 120W Polarisation: unipolar Kind of package: reel; tape кількість в упаковці: 5000 шт |
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| IAUC100N10S5L040ATMA1 | INFINEON TECHNOLOGIES |
IAUC100N10S5L040 SMD N channel transistors |
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| IAUC100N10S5L054ATMA1 | INFINEON TECHNOLOGIES |
IAUC100N10S5L054 SMD N channel transistors |
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| IAUC100N10S5N040ATMA1 | INFINEON TECHNOLOGIES |
IAUC100N10S5N040 SMD N channel transistors |
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| IAUC120N04S6L005ATMA1 | INFINEON TECHNOLOGIES |
Category: SMD N channel transistors Description: Transistor: N-MOSFET; OptiMOS™ 6; unipolar; 40V; 60A; Idm: 1550A Type of transistor: N-MOSFET Polarisation: unipolar Drain-source voltage: 40V Drain current: 60A Pulsed drain current: 1550A Power dissipation: 187W Case: PG-TDSON-8 Gate-source voltage: ±16V On-state resistance: 0.8mΩ Mounting: SMD Gate charge: 177nC Kind of package: reel; tape Kind of channel: enhancement Technology: OptiMOS™ 6 кількість в упаковці: 5000 шт |
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IAUC120N04S6L008ATMA1 | INFINEON TECHNOLOGIES |
Category: SMD N channel transistors Description: Transistor: N-MOSFET; OptiMOS™ 6; unipolar; 40V; 120A; Idm: 480A Type of transistor: N-MOSFET Polarisation: unipolar Drain-source voltage: 40V Drain current: 120A Pulsed drain current: 480A Power dissipation: 150W Case: PG-TDSON-8 Gate-source voltage: ±16V On-state resistance: 0.8mΩ Mounting: SMD Gate charge: 20nC Kind of package: reel; tape Kind of channel: enhancement Technology: OptiMOS™ 6 Features of semiconductor devices: logic level кількість в упаковці: 5000 шт |
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В кошику од. на суму грн. | ||
| IAUC120N04S6L009ATMA1 | INFINEON TECHNOLOGIES |
Category: SMD N channel transistors Description: Transistor: N-MOSFET; OptiMOS™ 6; unipolar; 40V; 120A; Idm: 480A Type of transistor: N-MOSFET Polarisation: unipolar Drain-source voltage: 40V Drain current: 120A Pulsed drain current: 480A Power dissipation: 150W Case: PG-TDSON-8 Gate-source voltage: ±16V On-state resistance: 1.2mΩ Mounting: SMD Gate charge: 128nC Kind of package: reel; tape Kind of channel: enhancement Technology: OptiMOS™ 6 кількість в упаковці: 5000 шт |
товару немає в наявності |
В кошику од. на суму грн. | |||
| IAUC120N04S6L012ATMA1 | INFINEON TECHNOLOGIES |
Category: SMD N channel transistors Description: Transistor: N-MOSFET; OptiMOS™ 6; unipolar; 40V; 120A; Idm: 480A Type of transistor: N-MOSFET Polarisation: unipolar Drain-source voltage: 40V Drain current: 120A Pulsed drain current: 480A Power dissipation: 115W Case: PG-TDSON-8 Gate-source voltage: ±16V On-state resistance: 1.7mΩ Mounting: SMD Gate charge: 80nC Kind of package: reel; tape Kind of channel: enhancement Technology: OptiMOS™ 6 кількість в упаковці: 5000 шт |
товару немає в наявності |
В кошику од. на суму грн. | |||
| IAUC120N04S6N009ATMA1 | INFINEON TECHNOLOGIES |
Category: SMD N channel transistors Description: Transistor: N-MOSFET; OptiMOS™ 6; unipolar; 40V; 120A; Idm: 480A Type of transistor: N-MOSFET Polarisation: unipolar Drain-source voltage: 40V Drain current: 120A Pulsed drain current: 480A Power dissipation: 150W Case: PG-TDSON-8 Gate-source voltage: ±20V On-state resistance: 0.9mΩ Mounting: SMD Gate charge: 33nC Kind of package: reel; tape Kind of channel: enhancement Technology: OptiMOS™ 6 Features of semiconductor devices: logic level кількість в упаковці: 5000 шт |
товару немає в наявності |
В кошику од. на суму грн. | |||
| IAUC120N06S5L032ATMA1 | INFINEON TECHNOLOGIES |
Category: SMD N channel transistors Description: Transistor: N-MOSFET; unipolar; 60V; 21A; Idm: 364A; 94W; PG-TDSON-8 Type of transistor: N-MOSFET Polarisation: unipolar Drain-source voltage: 60V Drain current: 21A Power dissipation: 94W Case: PG-TDSON-8 Gate-source voltage: ±16V On-state resistance: 4.4mΩ Mounting: SMD Gate charge: 51.5nC Kind of package: reel; tape Kind of channel: enhancement Technology: OptiMOS™ 5 Pulsed drain current: 364A кількість в упаковці: 5000 шт |
товару немає в наявності |
В кошику од. на суму грн. | |||
| IAUC120N06S5N017ATMA1 | INFINEON TECHNOLOGIES |
Category: SMD N channel transistors Description: Transistor: N-MOSFET; unipolar; 60V; 30A; Idm: 757A; 167W Type of transistor: N-MOSFET Polarisation: unipolar Drain-source voltage: 60V Drain current: 30A Power dissipation: 167W Case: PG-TDSON-8 Gate-source voltage: ±20V On-state resistance: 1.9mΩ Mounting: SMD Gate charge: 95.9nC Kind of package: reel; tape Kind of channel: enhancement Technology: OptiMOS™ 5 Pulsed drain current: 757A кількість в упаковці: 5000 шт |
товару немає в наявності |
В кошику од. на суму грн. | |||
| IAUC24N10S5L300ATMA1 | INFINEON TECHNOLOGIES |
IAUC24N10S5L300 SMD N channel transistors |
товару немає в наявності |
В кошику од. на суму грн. | |||
| IAUC26N10S5L245ATMA1 | INFINEON TECHNOLOGIES |
IAUC26N10S5L245 SMD N channel transistors |
товару немає в наявності |
В кошику од. на суму грн. | |||
| IAUC28N08S5L230ATMA1 | INFINEON TECHNOLOGIES |
IAUC28N08S5L230 SMD N channel transistors |
товару немає в наявності |
В кошику од. на суму грн. | |||
| IAUC40N08S5L140ATMA1 | INFINEON TECHNOLOGIES |
IAUC40N08S5L140 SMD N channel transistors |
товару немає в наявності |
В кошику од. на суму грн. | |||
| IAUC41N06S5L100ATMA1 | INFINEON TECHNOLOGIES |
IAUC41N06S5L100 SMD N channel transistors |
товару немає в наявності |
В кошику од. на суму грн. | |||
| IAUC41N06S5N102ATMA1 | INFINEON TECHNOLOGIES |
IAUC41N06S5N102 SMD N channel transistors |
товару немає в наявності |
В кошику од. на суму грн. |
| FP25R12W1T7B11BPSA1 |
|
Виробник: INFINEON TECHNOLOGIES
Category: IGBT modules
Description: Module: IGBT; diode/transistor; buck chopper; Urmax: 1.2kV; Ic: 25A
Semiconductor structure: diode/transistor
Gate-emitter voltage: ±20V
Collector current: 25A
Pulsed collector current: 50A
Electrical mounting: Press-in PCB
Mechanical mounting: screw
Type of module: IGBT
Technology: EasyPIM™ 1B
Topology: buck chopper; IGBT three-phase bridge; NTC thermistor; three-phase diode bridge
Case: AG-EASY1B-2
Max. off-state voltage: 1.2kV
кількість в упаковці: 1 шт
Category: IGBT modules
Description: Module: IGBT; diode/transistor; buck chopper; Urmax: 1.2kV; Ic: 25A
Semiconductor structure: diode/transistor
Gate-emitter voltage: ±20V
Collector current: 25A
Pulsed collector current: 50A
Electrical mounting: Press-in PCB
Mechanical mounting: screw
Type of module: IGBT
Technology: EasyPIM™ 1B
Topology: buck chopper; IGBT three-phase bridge; NTC thermistor; three-phase diode bridge
Case: AG-EASY1B-2
Max. off-state voltage: 1.2kV
кількість в упаковці: 1 шт
товару немає в наявності
В кошику
од. на суму грн.
| FP30R06KE3BPSA1 |
|
Виробник: INFINEON TECHNOLOGIES
Category: IGBT modules
Description: Module: IGBT; diode/transistor; buck chopper; Urmax: 600V; Ic: 30A
Max. off-state voltage: 0.6kV
Semiconductor structure: diode/transistor
Gate-emitter voltage: ±20V
Collector current: 30A
Pulsed collector current: 60A
Application: Inverter
Power dissipation: 125W
Electrical mounting: Press-in PCB
Mechanical mounting: screw
Type of module: IGBT
Technology: EconoPIM™ 2
Topology: buck chopper; IGBT three-phase bridge; NTC thermistor; three-phase diode bridge
Case: AG-ECONO2C
кількість в упаковці: 1 шт
Category: IGBT modules
Description: Module: IGBT; diode/transistor; buck chopper; Urmax: 600V; Ic: 30A
Max. off-state voltage: 0.6kV
Semiconductor structure: diode/transistor
Gate-emitter voltage: ±20V
Collector current: 30A
Pulsed collector current: 60A
Application: Inverter
Power dissipation: 125W
Electrical mounting: Press-in PCB
Mechanical mounting: screw
Type of module: IGBT
Technology: EconoPIM™ 2
Topology: buck chopper; IGBT three-phase bridge; NTC thermistor; three-phase diode bridge
Case: AG-ECONO2C
кількість в упаковці: 1 шт
товару немає в наявності
В кошику
од. на суму грн.
| FP40R12KT3BOSA1 |
|
Виробник: INFINEON TECHNOLOGIES
Category: IGBT modules
Description: Module: IGBT; diode/transistor; buck chopper; Urmax: 1.2kV; Ic: 40A
Type of semiconductor module: IGBT
Semiconductor structure: diode/transistor
Topology: buck chopper; IGBT three-phase bridge; NTC thermistor; three-phase diode bridge
Max. off-state voltage: 1.2kV
Collector current: 40A
Case: AG-ECONO2-5
Application: Inverter
Electrical mounting: Press-in PCB
Gate-emitter voltage: ±20V
Pulsed collector current: 80A
Power dissipation: 210W
Technology: EconoPIM™ 2
Mechanical mounting: screw
кількість в упаковці: 1 шт
Category: IGBT modules
Description: Module: IGBT; diode/transistor; buck chopper; Urmax: 1.2kV; Ic: 40A
Type of semiconductor module: IGBT
Semiconductor structure: diode/transistor
Topology: buck chopper; IGBT three-phase bridge; NTC thermistor; three-phase diode bridge
Max. off-state voltage: 1.2kV
Collector current: 40A
Case: AG-ECONO2-5
Application: Inverter
Electrical mounting: Press-in PCB
Gate-emitter voltage: ±20V
Pulsed collector current: 80A
Power dissipation: 210W
Technology: EconoPIM™ 2
Mechanical mounting: screw
кількість в упаковці: 1 шт
товару немає в наявності
В кошику
од. на суму грн.
| FP50R06W2E3B11BOMA1 |
|
Виробник: INFINEON TECHNOLOGIES
Category: IGBT modules
Description: Module: IGBT; diode/transistor; buck chopper; Urmax: 600V; Ic: 50A
Semiconductor structure: diode/transistor
Gate-emitter voltage: ±20V
Collector current: 50A
Pulsed collector current: 100A
Power dissipation: 175W
Electrical mounting: Press-in PCB
Mechanical mounting: screw
Type of module: IGBT
Technology: EasyPIM™ 2B
Topology: buck chopper; IGBT three-phase bridge; NTC thermistor; three-phase diode bridge
Case: AG-EASY2B-2
Max. off-state voltage: 0.6kV
кількість в упаковці: 1 шт
Category: IGBT modules
Description: Module: IGBT; diode/transistor; buck chopper; Urmax: 600V; Ic: 50A
Semiconductor structure: diode/transistor
Gate-emitter voltage: ±20V
Collector current: 50A
Pulsed collector current: 100A
Power dissipation: 175W
Electrical mounting: Press-in PCB
Mechanical mounting: screw
Type of module: IGBT
Technology: EasyPIM™ 2B
Topology: buck chopper; IGBT three-phase bridge; NTC thermistor; three-phase diode bridge
Case: AG-EASY2B-2
Max. off-state voltage: 0.6kV
кількість в упаковці: 1 шт
товару немає в наявності
В кошику
од. на суму грн.
| FP50R12KT3BOSA1 |
|
Виробник: INFINEON TECHNOLOGIES
Category: IGBT modules
Description: Diode/transistor; buck chopper,three-phase diode bridge; 280W
Max. off-state voltage: 1.2kV
Semiconductor structure: diode/transistor
Gate-emitter voltage: ±20V
Collector current: 50A
Pulsed collector current: 100A
Application: Inverter
Power dissipation: 280W
Electrical mounting: Press-in PCB
Mechanical mounting: screw
Technology: EconoPIM™ 2
Topology: buck chopper; IGBT three-phase bridge; NTC thermistor; three-phase diode bridge
Type of semiconductor module: IGBT
Case: AG-ECONO3-3
кількість в упаковці: 1 шт
Category: IGBT modules
Description: Diode/transistor; buck chopper,three-phase diode bridge; 280W
Max. off-state voltage: 1.2kV
Semiconductor structure: diode/transistor
Gate-emitter voltage: ±20V
Collector current: 50A
Pulsed collector current: 100A
Application: Inverter
Power dissipation: 280W
Electrical mounting: Press-in PCB
Mechanical mounting: screw
Technology: EconoPIM™ 2
Topology: buck chopper; IGBT three-phase bridge; NTC thermistor; three-phase diode bridge
Type of semiconductor module: IGBT
Case: AG-ECONO3-3
кількість в упаковці: 1 шт
товару немає в наявності
В кошику
од. на суму грн.
| FP75R12KT4 |
|
Виробник: INFINEON TECHNOLOGIES
Category: IGBT modules
Description: Module: IGBT; diode/transistor; buck chopper; Urmax: 1.2kV; Ic: 75A
Type of semiconductor module: IGBT
Semiconductor structure: diode/transistor
Topology: buck chopper; IGBT three-phase bridge; NTC thermistor; three-phase diode bridge
Max. off-state voltage: 1.2kV
Collector current: 75A
Case: AG-ECONO3-3
Application: Inverter
Electrical mounting: Press-in PCB
Gate-emitter voltage: ±20V
Pulsed collector current: 150A
Power dissipation: 385W
Mechanical mounting: screw
Technology: EconoPIM™ 3
кількість в упаковці: 1 шт
Category: IGBT modules
Description: Module: IGBT; diode/transistor; buck chopper; Urmax: 1.2kV; Ic: 75A
Type of semiconductor module: IGBT
Semiconductor structure: diode/transistor
Topology: buck chopper; IGBT three-phase bridge; NTC thermistor; three-phase diode bridge
Max. off-state voltage: 1.2kV
Collector current: 75A
Case: AG-ECONO3-3
Application: Inverter
Electrical mounting: Press-in PCB
Gate-emitter voltage: ±20V
Pulsed collector current: 150A
Power dissipation: 385W
Mechanical mounting: screw
Technology: EconoPIM™ 3
кількість в упаковці: 1 шт
на замовлення 6 шт:
термін постачання 14-21 дні (днів)| Кількість | Ціна |
|---|---|
| 1+ | 19265.11 грн |
| FS100R12W2T7B11BOMA1 |
|
Виробник: INFINEON TECHNOLOGIES
Category: IGBT modules
Description: Module: IGBT; transistor/transistor; IGBT three-phase bridge
Semiconductor structure: transistor/transistor
Gate-emitter voltage: ±20V
Collector current: 100A
Pulsed collector current: 200A
Electrical mounting: Press-in PCB
Mechanical mounting: screw
Type of module: IGBT
Technology: EasyPACK™ 2B
Topology: IGBT three-phase bridge; NTC thermistor
Case: AG-EASY2B-2
Max. off-state voltage: 1.2kV
кількість в упаковці: 1 шт
Category: IGBT modules
Description: Module: IGBT; transistor/transistor; IGBT three-phase bridge
Semiconductor structure: transistor/transistor
Gate-emitter voltage: ±20V
Collector current: 100A
Pulsed collector current: 200A
Electrical mounting: Press-in PCB
Mechanical mounting: screw
Type of module: IGBT
Technology: EasyPACK™ 2B
Topology: IGBT three-phase bridge; NTC thermistor
Case: AG-EASY2B-2
Max. off-state voltage: 1.2kV
кількість в упаковці: 1 шт
товару немає в наявності
В кошику
од. на суму грн.
| FS10R12VT3BOMA1 |
|
Виробник: INFINEON TECHNOLOGIES
Category: IGBT modules
Description: Transistor/transistor; IGBT three-phase bridge; Urmax: 1.2kV
Max. off-state voltage: 1.2kV
Semiconductor structure: transistor/transistor
Gate-emitter voltage: ±20V
Collector current: 10A
Pulsed collector current: 20A
Power dissipation: 64W
Electrical mounting: Press-in PCB
Technology: EasyPACK™
Topology: IGBT three-phase bridge
Type of semiconductor module: IGBT
Case: AG-EASY750-1
кількість в упаковці: 40 шт
Category: IGBT modules
Description: Transistor/transistor; IGBT three-phase bridge; Urmax: 1.2kV
Max. off-state voltage: 1.2kV
Semiconductor structure: transistor/transistor
Gate-emitter voltage: ±20V
Collector current: 10A
Pulsed collector current: 20A
Power dissipation: 64W
Electrical mounting: Press-in PCB
Technology: EasyPACK™
Topology: IGBT three-phase bridge
Type of semiconductor module: IGBT
Case: AG-EASY750-1
кількість в упаковці: 40 шт
товару немає в наявності
В кошику
од. на суму грн.
| FS150R12KT4BOSA1 |
|
Виробник: INFINEON TECHNOLOGIES
Category: IGBT modules
Description: Module: IGBT; transistor/transistor; IGBT three-phase bridge
Type of semiconductor module: IGBT
Semiconductor structure: transistor/transistor
Topology: IGBT three-phase bridge; NTC thermistor
Max. off-state voltage: 1.2kV
Collector current: 150A
Case: AG-ECONO3-4
Electrical mounting: Press-in PCB
Gate-emitter voltage: ±20V
Pulsed collector current: 300A
Power dissipation: 750W
Technology: EconoPACK™ 3
Mechanical mounting: screw
кількість в упаковці: 1 шт
Category: IGBT modules
Description: Module: IGBT; transistor/transistor; IGBT three-phase bridge
Type of semiconductor module: IGBT
Semiconductor structure: transistor/transistor
Topology: IGBT three-phase bridge; NTC thermistor
Max. off-state voltage: 1.2kV
Collector current: 150A
Case: AG-ECONO3-4
Electrical mounting: Press-in PCB
Gate-emitter voltage: ±20V
Pulsed collector current: 300A
Power dissipation: 750W
Technology: EconoPACK™ 3
Mechanical mounting: screw
кількість в упаковці: 1 шт
товару немає в наявності
В кошику
од. на суму грн.
| FS150R17PE4BOSA1 |
|
Виробник: INFINEON TECHNOLOGIES
Category: IGBT modules
Description: Module: IGBT; transistor/transistor; IGBT three-phase bridge
Collector current: 150A
Gate-emitter voltage: ±20V
Semiconductor structure: transistor/transistor
Max. off-state voltage: 1.7kV
Electrical mounting: Press-Fit; screw
Mechanical mounting: screw
Type of module: IGBT
Technology: EconoPACK™ 4
Case: AG-ECONO4-1
Topology: IGBT three-phase bridge; NTC thermistor
Pulsed collector current: 300A
кількість в упаковці: 1 шт
Category: IGBT modules
Description: Module: IGBT; transistor/transistor; IGBT three-phase bridge
Collector current: 150A
Gate-emitter voltage: ±20V
Semiconductor structure: transistor/transistor
Max. off-state voltage: 1.7kV
Electrical mounting: Press-Fit; screw
Mechanical mounting: screw
Type of module: IGBT
Technology: EconoPACK™ 4
Case: AG-ECONO4-1
Topology: IGBT three-phase bridge; NTC thermistor
Pulsed collector current: 300A
кількість в упаковці: 1 шт
товару немає в наявності
В кошику
од. на суму грн.
| FS15R12VT3BOMA1 |
|
Виробник: INFINEON TECHNOLOGIES
FS15R12VT3 IGBT modules
FS15R12VT3 IGBT modules
товару немає в наявності
В кошику
од. на суму грн.
| FS200R12KT4RB11BOSA1 |
|
Виробник: INFINEON TECHNOLOGIES
Category: IGBT modules
Description: Module: IGBT; transistor/transistor; IGBT three-phase bridge
Semiconductor structure: transistor/transistor
Gate-emitter voltage: ±20V
Collector current: 200A
Pulsed collector current: 400A
Power dissipation: 1kW
Electrical mounting: Press-in PCB
Mechanical mounting: screw
Type of module: IGBT
Technology: EconoPACK™ 3
Topology: IGBT three-phase bridge; NTC thermistor
Case: AG-ECONO3-4
Max. off-state voltage: 1.2kV
кількість в упаковці: 1 шт
Category: IGBT modules
Description: Module: IGBT; transistor/transistor; IGBT three-phase bridge
Semiconductor structure: transistor/transistor
Gate-emitter voltage: ±20V
Collector current: 200A
Pulsed collector current: 400A
Power dissipation: 1kW
Electrical mounting: Press-in PCB
Mechanical mounting: screw
Type of module: IGBT
Technology: EconoPACK™ 3
Topology: IGBT three-phase bridge; NTC thermistor
Case: AG-ECONO3-4
Max. off-state voltage: 1.2kV
кількість в упаковці: 1 шт
товару немає в наявності
В кошику
од. на суму грн.
| FS50R12KE3BPSA1 |
|
Виробник: INFINEON TECHNOLOGIES
Category: IGBT modules
Description: Transistor/transistor; Urmax: 1.2kV; Ic: 50A; AG-ECONO2B; Inverter
Max. off-state voltage: 1.2kV
Semiconductor structure: transistor/transistor
Gate-emitter voltage: ±20V
Collector current: 50A
Pulsed collector current: 100A
Application: Inverter
Power dissipation: 270W
Electrical mounting: Press-in PCB
Mechanical mounting: screw
Technology: EconoPACK™ 2
Type of semiconductor module: IGBT
Case: AG-ECONO2B
кількість в упаковці: 1 шт
Category: IGBT modules
Description: Transistor/transistor; Urmax: 1.2kV; Ic: 50A; AG-ECONO2B; Inverter
Max. off-state voltage: 1.2kV
Semiconductor structure: transistor/transistor
Gate-emitter voltage: ±20V
Collector current: 50A
Pulsed collector current: 100A
Application: Inverter
Power dissipation: 270W
Electrical mounting: Press-in PCB
Mechanical mounting: screw
Technology: EconoPACK™ 2
Type of semiconductor module: IGBT
Case: AG-ECONO2B
кількість в упаковці: 1 шт
товару немає в наявності
В кошику
од. на суму грн.
| FS75R12W2T4B11BOMA1 |
|
Виробник: INFINEON TECHNOLOGIES
Category: IGBT modules
Description: Module: IGBT; transistor/transistor; IGBT three-phase bridge
Power dissipation: 375W
Electrical mounting: Press-in PCB
Mechanical mounting: screw
Technology: EasyPACK™ 2B
Topology: IGBT three-phase bridge; NTC thermistor
Type of semiconductor module: IGBT
Case: AG-EASY2B-2
Max. off-state voltage: 1.2kV
Semiconductor structure: transistor/transistor
Gate-emitter voltage: ±20V
Collector current: 75A
Pulsed collector current: 150A
кількість в упаковці: 15 шт
Category: IGBT modules
Description: Module: IGBT; transistor/transistor; IGBT three-phase bridge
Power dissipation: 375W
Electrical mounting: Press-in PCB
Mechanical mounting: screw
Technology: EasyPACK™ 2B
Topology: IGBT three-phase bridge; NTC thermistor
Type of semiconductor module: IGBT
Case: AG-EASY2B-2
Max. off-state voltage: 1.2kV
Semiconductor structure: transistor/transistor
Gate-emitter voltage: ±20V
Collector current: 75A
Pulsed collector current: 150A
кількість в упаковці: 15 шт
товару немає в наявності
В кошику
од. на суму грн.
| FS75R17KE3BOSA1 |
|
Виробник: INFINEON TECHNOLOGIES
Category: IGBT modules
Description: Module: IGBT; transistor/transistor; IGBT half-bridge x3; Ic: 75A
Type of module: IGBT
Semiconductor structure: transistor/transistor
Topology: IGBT half-bridge x3; NTC thermistor
Max. off-state voltage: 1.7kV
Collector current: 75A
Case: AG-ECONO3-4
Application: Inverter
Electrical mounting: Press-in PCB
Gate-emitter voltage: ±20V
Pulsed collector current: 150A
Power dissipation: 465W
Mechanical mounting: screw
кількість в упаковці: 10 шт
Category: IGBT modules
Description: Module: IGBT; transistor/transistor; IGBT half-bridge x3; Ic: 75A
Type of module: IGBT
Semiconductor structure: transistor/transistor
Topology: IGBT half-bridge x3; NTC thermistor
Max. off-state voltage: 1.7kV
Collector current: 75A
Case: AG-ECONO3-4
Application: Inverter
Electrical mounting: Press-in PCB
Gate-emitter voltage: ±20V
Pulsed collector current: 150A
Power dissipation: 465W
Mechanical mounting: screw
кількість в упаковці: 10 шт
товару немає в наявності
В кошику
од. на суму грн.
| FS820R08A6P2LBBPSA1 |
|
Виробник: INFINEON TECHNOLOGIES
FS820R08A6P2LB IGBT modules
FS820R08A6P2LB IGBT modules
товару немає в наявності
В кошику
од. на суму грн.
| FZ1000R33HE3BPSA1 |
|
Виробник: INFINEON TECHNOLOGIES
FZ1000R33HE3BPSA1 IGBT modules
FZ1000R33HE3BPSA1 IGBT modules
товару немає в наявності
В кошику
од. на суму грн.
| FZ1400R33HE4BPSA1 |
|
Виробник: INFINEON TECHNOLOGIES
FZ1400R33HE4BPSA1 IGBT modules
FZ1400R33HE4BPSA1 IGBT modules
товару немає в наявності
В кошику
од. на суму грн.
| FZ2000R33HE4BOSA1 |
|
Виробник: INFINEON TECHNOLOGIES
Category: IGBT modules
Description: Module: IGBT; transistor/transistor,common emitter; IGBT x3
Type of module: IGBT
Semiconductor structure: common emitter; transistor/transistor
Topology: IGBT x3
Max. off-state voltage: 3.3kV
Collector current: 2kA
Case: AG-IHVB190-3
Electrical mounting: screw
Gate-emitter voltage: ±20V
Pulsed collector current: 4kA
Technology: TRENCHSTOP™
Mechanical mounting: screw
кількість в упаковці: 1 шт
Category: IGBT modules
Description: Module: IGBT; transistor/transistor,common emitter; IGBT x3
Type of module: IGBT
Semiconductor structure: common emitter; transistor/transistor
Topology: IGBT x3
Max. off-state voltage: 3.3kV
Collector current: 2kA
Case: AG-IHVB190-3
Electrical mounting: screw
Gate-emitter voltage: ±20V
Pulsed collector current: 4kA
Technology: TRENCHSTOP™
Mechanical mounting: screw
кількість в упаковці: 1 шт
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од. на суму грн.
| FZ400R12KS4HOSA1 |
|
Виробник: INFINEON TECHNOLOGIES
Category: IGBT modules
Description: Module: IGBT; single transistor; Urmax: 1.2kV; Ic: 400A; AG-62MM
Type of semiconductor module: IGBT
Semiconductor structure: single transistor
Max. off-state voltage: 1.2kV
Case: AG-62MM
Electrical mounting: screw
Mechanical mounting: screw
Power dissipation: 2.5kW
Gate-emitter voltage: ±20V
Collector current: 400A
Pulsed collector current: 800A
кількість в упаковці: 1 шт
Category: IGBT modules
Description: Module: IGBT; single transistor; Urmax: 1.2kV; Ic: 400A; AG-62MM
Type of semiconductor module: IGBT
Semiconductor structure: single transistor
Max. off-state voltage: 1.2kV
Case: AG-62MM
Electrical mounting: screw
Mechanical mounting: screw
Power dissipation: 2.5kW
Gate-emitter voltage: ±20V
Collector current: 400A
Pulsed collector current: 800A
кількість в упаковці: 1 шт
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| FZ400R17KE4HOSA1 |
|
Виробник: INFINEON TECHNOLOGIES
FZ400R17KE4HOSA1 IGBT modules
FZ400R17KE4HOSA1 IGBT modules
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В кошику
од. на суму грн.
| FZ600R12KE3HOSA1 |
|
Виробник: INFINEON TECHNOLOGIES
Category: IGBT modules
Description: Module: IGBT; single transistor; Urmax: 1.2kV; Ic: 600A; AG-62MM
Type of semiconductor module: IGBT
Semiconductor structure: single transistor
Max. off-state voltage: 1.2kV
Case: AG-62MM
Electrical mounting: screw
Mechanical mounting: screw
Power dissipation: 2.8kW
Gate-emitter voltage: ±20V
Collector current: 600A
Pulsed collector current: 1.2kA
кількість в упаковці: 1 шт
Category: IGBT modules
Description: Module: IGBT; single transistor; Urmax: 1.2kV; Ic: 600A; AG-62MM
Type of semiconductor module: IGBT
Semiconductor structure: single transistor
Max. off-state voltage: 1.2kV
Case: AG-62MM
Electrical mounting: screw
Mechanical mounting: screw
Power dissipation: 2.8kW
Gate-emitter voltage: ±20V
Collector current: 600A
Pulsed collector current: 1.2kA
кількість в упаковці: 1 шт
товару немає в наявності
В кошику
од. на суму грн.
| FZ900R12KE4HOSA1 |
|
Виробник: INFINEON TECHNOLOGIES
Category: IGBT modules
Description: Module: IGBT; single transistor; Urmax: 1.2kV; Ic: 900A; AG-62MMES
Type of semiconductor module: IGBT
Semiconductor structure: single transistor
Max. off-state voltage: 1.2kV
Case: AG-62MMES
Electrical mounting: screw
Mechanical mounting: screw
Power dissipation: 4.3kW
Gate-emitter voltage: ±20V
Collector current: 900A
Pulsed collector current: 1.8kA
кількість в упаковці: 1 шт
Category: IGBT modules
Description: Module: IGBT; single transistor; Urmax: 1.2kV; Ic: 900A; AG-62MMES
Type of semiconductor module: IGBT
Semiconductor structure: single transistor
Max. off-state voltage: 1.2kV
Case: AG-62MMES
Electrical mounting: screw
Mechanical mounting: screw
Power dissipation: 4.3kW
Gate-emitter voltage: ±20V
Collector current: 900A
Pulsed collector current: 1.8kA
кількість в упаковці: 1 шт
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В кошику
од. на суму грн.
| IAUA170N10S5N031AUMA1 |
|
Виробник: INFINEON TECHNOLOGIES
IAUA170N10S5N031 SMD N channel transistors
IAUA170N10S5N031 SMD N channel transistors
товару немає в наявності
В кошику
од. на суму грн.
| IAUA180N04S5N012AUMA1 |
|
Виробник: INFINEON TECHNOLOGIES
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 40V; 180A; Idm: 720A; 125W
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 40V
Drain current: 180A
Pulsed drain current: 720A
Power dissipation: 125W
Case: PG-HSOF-5
Gate-source voltage: ±20V
On-state resistance: 1.4mΩ
Mounting: SMD
Gate charge: 0.1µC
Kind of package: reel; tape
Kind of channel: enhancement
Technology: OptiMOS™ 5
кількість в упаковці: 2000 шт
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 40V; 180A; Idm: 720A; 125W
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 40V
Drain current: 180A
Pulsed drain current: 720A
Power dissipation: 125W
Case: PG-HSOF-5
Gate-source voltage: ±20V
On-state resistance: 1.4mΩ
Mounting: SMD
Gate charge: 0.1µC
Kind of package: reel; tape
Kind of channel: enhancement
Technology: OptiMOS™ 5
кількість в упаковці: 2000 шт
товару немає в наявності
В кошику
од. на суму грн.
| IAUA180N08S5N026AUMA1 |
|
Виробник: INFINEON TECHNOLOGIES
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 80V; 25A; Idm: 546A; 179W; PG-HSOF-5
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 80V
Drain current: 25A
Pulsed drain current: 546A
Power dissipation: 179W
Case: PG-HSOF-5
Gate-source voltage: ±20V
On-state resistance: 3.6mΩ
Mounting: SMD
Gate charge: 87nC
Kind of package: reel; tape
Kind of channel: enhancement
Technology: OptiMOS™ 5
кількість в упаковці: 2000 шт
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 80V; 25A; Idm: 546A; 179W; PG-HSOF-5
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 80V
Drain current: 25A
Pulsed drain current: 546A
Power dissipation: 179W
Case: PG-HSOF-5
Gate-source voltage: ±20V
On-state resistance: 3.6mΩ
Mounting: SMD
Gate charge: 87nC
Kind of package: reel; tape
Kind of channel: enhancement
Technology: OptiMOS™ 5
кількість в упаковці: 2000 шт
товару немає в наявності
В кошику
од. на суму грн.
| IAUA180N10S5N029AUMA1 |
|
Виробник: INFINEON TECHNOLOGIES
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 100V; 24A; Idm: 561A; 221W
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 100V
Drain current: 24A
Pulsed drain current: 561A
Power dissipation: 221W
Case: PG-HSOF-5
Gate-source voltage: ±20V
On-state resistance: 3.4mΩ
Mounting: SMD
Gate charge: 105nC
Kind of package: reel; tape
Kind of channel: enhancement
Technology: OptiMOS™ 5
кількість в упаковці: 2000 шт
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 100V; 24A; Idm: 561A; 221W
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 100V
Drain current: 24A
Pulsed drain current: 561A
Power dissipation: 221W
Case: PG-HSOF-5
Gate-source voltage: ±20V
On-state resistance: 3.4mΩ
Mounting: SMD
Gate charge: 105nC
Kind of package: reel; tape
Kind of channel: enhancement
Technology: OptiMOS™ 5
кількість в упаковці: 2000 шт
товару немає в наявності
В кошику
од. на суму грн.
| IAUA200N04S5N010AUMA1 |
|
Виробник: INFINEON TECHNOLOGIES
IAUA200N04S5N010 SMD N channel transistors
IAUA200N04S5N010 SMD N channel transistors
товару немає в наявності
В кошику
од. на суму грн.
| IAUA210N10S5N024AUMA1 |
|
Виробник: INFINEON TECHNOLOGIES
IAUA210N10S5N024 SMD N channel transistors
IAUA210N10S5N024 SMD N channel transistors
товару немає в наявності
В кошику
од. на суму грн.
| IAUA220N08S5N021AUMA1 |
|
Виробник: INFINEON TECHNOLOGIES
IAUA220N08S5N021 SMD N channel transistors
IAUA220N08S5N021 SMD N channel transistors
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од. на суму грн.
| IAUA250N04S6N005AUMA1 |
|
Виробник: INFINEON TECHNOLOGIES
IAUA250N04S6N005 SMD N channel transistors
IAUA250N04S6N005 SMD N channel transistors
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В кошику
од. на суму грн.
| IAUA250N04S6N006AUMA1 |
Виробник: INFINEON TECHNOLOGIES
IAUA250N04S6N006 SMD N channel transistors
IAUA250N04S6N006 SMD N channel transistors
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В кошику
од. на суму грн.
| IAUA250N04S6N007AUMA1 |
Виробник: INFINEON TECHNOLOGIES
IAUA250N04S6N007 SMD N channel transistors
IAUA250N04S6N007 SMD N channel transistors
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од. на суму грн.
| IAUA250N04S6N007EAUMA1 |
|
Виробник: INFINEON TECHNOLOGIES
IAUA250N04S6N007E SMD N channel transistors
IAUA250N04S6N007E SMD N channel transistors
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од. на суму грн.
| IAUA250N04S6N008AUMA1 |
|
Виробник: INFINEON TECHNOLOGIES
IAUA250N04S6N008 SMD N channel transistors
IAUA250N04S6N008 SMD N channel transistors
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од. на суму грн.
| IAUA250N08S5N018AUMA1 |
|
Виробник: INFINEON TECHNOLOGIES
IAUA250N08S5N018 SMD N channel transistors
IAUA250N08S5N018 SMD N channel transistors
товару немає в наявності
В кошику
од. на суму грн.
| IAUC100N04S6L014ATMA1 |
|
Виробник: INFINEON TECHNOLOGIES
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; OptiMOS™ 6; unipolar; 40V; 100A; Idm: 400A
Case: PG-TDSON-8
Mounting: SMD
Kind of package: reel; tape
Drain-source voltage: 40V
Drain current: 100A
On-state resistance: 2mΩ
Type of transistor: N-MOSFET
Power dissipation: 100W
Polarisation: unipolar
Gate charge: 65nC
Technology: OptiMOS™ 6
Kind of channel: enhancement
Gate-source voltage: ±16V
Pulsed drain current: 400A
кількість в упаковці: 5000 шт
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; OptiMOS™ 6; unipolar; 40V; 100A; Idm: 400A
Case: PG-TDSON-8
Mounting: SMD
Kind of package: reel; tape
Drain-source voltage: 40V
Drain current: 100A
On-state resistance: 2mΩ
Type of transistor: N-MOSFET
Power dissipation: 100W
Polarisation: unipolar
Gate charge: 65nC
Technology: OptiMOS™ 6
Kind of channel: enhancement
Gate-source voltage: ±16V
Pulsed drain current: 400A
кількість в упаковці: 5000 шт
товару немає в наявності
В кошику
од. на суму грн.
| IAUC100N04S6L020ATMA1 |
|
Виробник: INFINEON TECHNOLOGIES
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; OptiMOS™ 6; unipolar; 40V; 100A; Idm: 400A
Case: PG-TDSON-8
Mounting: SMD
Kind of package: reel; tape
Drain-source voltage: 40V
Drain current: 100A
On-state resistance: 2.7mΩ
Type of transistor: N-MOSFET
Power dissipation: 75W
Polarisation: unipolar
Gate charge: 46nC
Technology: OptiMOS™ 6
Kind of channel: enhancement
Gate-source voltage: ±16V
Pulsed drain current: 400A
кількість в упаковці: 5000 шт
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; OptiMOS™ 6; unipolar; 40V; 100A; Idm: 400A
Case: PG-TDSON-8
Mounting: SMD
Kind of package: reel; tape
Drain-source voltage: 40V
Drain current: 100A
On-state resistance: 2.7mΩ
Type of transistor: N-MOSFET
Power dissipation: 75W
Polarisation: unipolar
Gate charge: 46nC
Technology: OptiMOS™ 6
Kind of channel: enhancement
Gate-source voltage: ±16V
Pulsed drain current: 400A
кількість в упаковці: 5000 шт
товару немає в наявності
В кошику
од. на суму грн.
| IAUC100N04S6L025ATMA1 |
|
Виробник: INFINEON TECHNOLOGIES
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; OptiMOS™ 6; unipolar; 40V; 83A; Idm: 400A; 62W
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 40V
Drain current: 83A
Pulsed drain current: 400A
Power dissipation: 62W
Case: PG-TDSON-8
Gate-source voltage: ±16V
On-state resistance: 3.6mΩ
Mounting: SMD
Gate charge: 34nC
Kind of package: reel; tape
Kind of channel: enhancement
Technology: OptiMOS™ 6
кількість в упаковці: 5000 шт
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; OptiMOS™ 6; unipolar; 40V; 83A; Idm: 400A; 62W
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 40V
Drain current: 83A
Pulsed drain current: 400A
Power dissipation: 62W
Case: PG-TDSON-8
Gate-source voltage: ±16V
On-state resistance: 3.6mΩ
Mounting: SMD
Gate charge: 34nC
Kind of package: reel; tape
Kind of channel: enhancement
Technology: OptiMOS™ 6
кількість в упаковці: 5000 шт
товару немає в наявності
В кошику
од. на суму грн.
| IAUC100N04S6N022ATMA1 |
|
Виробник: INFINEON TECHNOLOGIES
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; OptiMOS™ 6; unipolar; 40V; 96A; Idm: 400A; 75W
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 40V
Drain current: 96A
Pulsed drain current: 400A
Power dissipation: 75W
Case: PG-TDSON-8
Gate-source voltage: ±20V
On-state resistance: 3mΩ
Mounting: SMD
Gate charge: 39nC
Kind of package: reel; tape
Kind of channel: enhancement
Technology: OptiMOS™ 6
кількість в упаковці: 5000 шт
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; OptiMOS™ 6; unipolar; 40V; 96A; Idm: 400A; 75W
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 40V
Drain current: 96A
Pulsed drain current: 400A
Power dissipation: 75W
Case: PG-TDSON-8
Gate-source voltage: ±20V
On-state resistance: 3mΩ
Mounting: SMD
Gate charge: 39nC
Kind of package: reel; tape
Kind of channel: enhancement
Technology: OptiMOS™ 6
кількість в упаковці: 5000 шт
товару немає в наявності
В кошику
од. на суму грн.
| IAUC100N04S6N028ATMA1 |
|
Виробник: INFINEON TECHNOLOGIES
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; OptiMOS™ 6; unipolar; 40V; 77A; Idm: 400A; 62W
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 40V
Drain current: 77A
Pulsed drain current: 400A
Power dissipation: 62W
Case: PG-TDSON-8
Gate-source voltage: ±20V
On-state resistance: 3.9mΩ
Mounting: SMD
Gate charge: 29nC
Kind of package: reel; tape
Kind of channel: enhancement
Technology: OptiMOS™ 6
кількість в упаковці: 5000 шт
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; OptiMOS™ 6; unipolar; 40V; 77A; Idm: 400A; 62W
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 40V
Drain current: 77A
Pulsed drain current: 400A
Power dissipation: 62W
Case: PG-TDSON-8
Gate-source voltage: ±20V
On-state resistance: 3.9mΩ
Mounting: SMD
Gate charge: 29nC
Kind of package: reel; tape
Kind of channel: enhancement
Technology: OptiMOS™ 6
кількість в упаковці: 5000 шт
товару немає в наявності
В кошику
од. на суму грн.
| IAUC100N08S5N031ATMA1 |
|
Виробник: INFINEON TECHNOLOGIES
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 80V; 100A; Idm: 400A; 167W
Case: PG-TDSON-8
Technology: OptiMOS™ 5
Kind of channel: enhancement
Gate-source voltage: ±20V
Pulsed drain current: 400A
Mounting: SMD
Drain-source voltage: 80V
Drain current: 100A
On-state resistance: 3.1mΩ
Type of transistor: N-MOSFET
Power dissipation: 167W
Polarisation: unipolar
Kind of package: reel; tape
кількість в упаковці: 5000 шт
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 80V; 100A; Idm: 400A; 167W
Case: PG-TDSON-8
Technology: OptiMOS™ 5
Kind of channel: enhancement
Gate-source voltage: ±20V
Pulsed drain current: 400A
Mounting: SMD
Drain-source voltage: 80V
Drain current: 100A
On-state resistance: 3.1mΩ
Type of transistor: N-MOSFET
Power dissipation: 167W
Polarisation: unipolar
Kind of package: reel; tape
кількість в упаковці: 5000 шт
товару немає в наявності
В кошику
од. на суму грн.
| IAUC100N08S5N034ATMA1 |
|
Виробник: INFINEON TECHNOLOGIES
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 80V; 22A; Idm: 400A; 136W
Case: PG-TDSON-8
Technology: OptiMOS™ 5
Kind of channel: enhancement
Gate-source voltage: ±20V
Pulsed drain current: 400A
Mounting: SMD
Drain-source voltage: 80V
Drain current: 22A
On-state resistance: 4.8mΩ
Type of transistor: N-MOSFET
Power dissipation: 136W
Polarisation: unipolar
Kind of package: reel; tape
Gate charge: 66nC
кількість в упаковці: 5000 шт
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 80V; 22A; Idm: 400A; 136W
Case: PG-TDSON-8
Technology: OptiMOS™ 5
Kind of channel: enhancement
Gate-source voltage: ±20V
Pulsed drain current: 400A
Mounting: SMD
Drain-source voltage: 80V
Drain current: 22A
On-state resistance: 4.8mΩ
Type of transistor: N-MOSFET
Power dissipation: 136W
Polarisation: unipolar
Kind of package: reel; tape
Gate charge: 66nC
кількість в упаковці: 5000 шт
товару немає в наявності
В кошику
од. на суму грн.
| IAUC100N08S5N043ATMA1 |
|
Виробник: INFINEON TECHNOLOGIES
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 80V; 76A; Idm: 400A; 120W
Case: PG-TDSON-8
Technology: OptiMOS™ 5
Kind of channel: enhancement
Gate-source voltage: ±20V
Pulsed drain current: 400A
Mounting: SMD
Drain-source voltage: 80V
Drain current: 76A
On-state resistance: 4.3mΩ
Type of transistor: N-MOSFET
Power dissipation: 120W
Polarisation: unipolar
Kind of package: reel; tape
кількість в упаковці: 5000 шт
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 80V; 76A; Idm: 400A; 120W
Case: PG-TDSON-8
Technology: OptiMOS™ 5
Kind of channel: enhancement
Gate-source voltage: ±20V
Pulsed drain current: 400A
Mounting: SMD
Drain-source voltage: 80V
Drain current: 76A
On-state resistance: 4.3mΩ
Type of transistor: N-MOSFET
Power dissipation: 120W
Polarisation: unipolar
Kind of package: reel; tape
кількість в упаковці: 5000 шт
товару немає в наявності
В кошику
од. на суму грн.
| IAUC100N10S5L040ATMA1 |
|
Виробник: INFINEON TECHNOLOGIES
IAUC100N10S5L040 SMD N channel transistors
IAUC100N10S5L040 SMD N channel transistors
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В кошику
од. на суму грн.
| IAUC100N10S5L054ATMA1 |
|
Виробник: INFINEON TECHNOLOGIES
IAUC100N10S5L054 SMD N channel transistors
IAUC100N10S5L054 SMD N channel transistors
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од. на суму грн.
| IAUC100N10S5N040ATMA1 |
|
Виробник: INFINEON TECHNOLOGIES
IAUC100N10S5N040 SMD N channel transistors
IAUC100N10S5N040 SMD N channel transistors
товару немає в наявності
В кошику
од. на суму грн.
| IAUC120N04S6L005ATMA1 |
|
Виробник: INFINEON TECHNOLOGIES
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; OptiMOS™ 6; unipolar; 40V; 60A; Idm: 1550A
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 40V
Drain current: 60A
Pulsed drain current: 1550A
Power dissipation: 187W
Case: PG-TDSON-8
Gate-source voltage: ±16V
On-state resistance: 0.8mΩ
Mounting: SMD
Gate charge: 177nC
Kind of package: reel; tape
Kind of channel: enhancement
Technology: OptiMOS™ 6
кількість в упаковці: 5000 шт
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; OptiMOS™ 6; unipolar; 40V; 60A; Idm: 1550A
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 40V
Drain current: 60A
Pulsed drain current: 1550A
Power dissipation: 187W
Case: PG-TDSON-8
Gate-source voltage: ±16V
On-state resistance: 0.8mΩ
Mounting: SMD
Gate charge: 177nC
Kind of package: reel; tape
Kind of channel: enhancement
Technology: OptiMOS™ 6
кількість в упаковці: 5000 шт
товару немає в наявності
В кошику
од. на суму грн.
| IAUC120N04S6L008ATMA1 |
|
Виробник: INFINEON TECHNOLOGIES
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; OptiMOS™ 6; unipolar; 40V; 120A; Idm: 480A
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 40V
Drain current: 120A
Pulsed drain current: 480A
Power dissipation: 150W
Case: PG-TDSON-8
Gate-source voltage: ±16V
On-state resistance: 0.8mΩ
Mounting: SMD
Gate charge: 20nC
Kind of package: reel; tape
Kind of channel: enhancement
Technology: OptiMOS™ 6
Features of semiconductor devices: logic level
кількість в упаковці: 5000 шт
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; OptiMOS™ 6; unipolar; 40V; 120A; Idm: 480A
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 40V
Drain current: 120A
Pulsed drain current: 480A
Power dissipation: 150W
Case: PG-TDSON-8
Gate-source voltage: ±16V
On-state resistance: 0.8mΩ
Mounting: SMD
Gate charge: 20nC
Kind of package: reel; tape
Kind of channel: enhancement
Technology: OptiMOS™ 6
Features of semiconductor devices: logic level
кількість в упаковці: 5000 шт
товару немає в наявності
В кошику
од. на суму грн.
| IAUC120N04S6L009ATMA1 |
|
Виробник: INFINEON TECHNOLOGIES
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; OptiMOS™ 6; unipolar; 40V; 120A; Idm: 480A
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 40V
Drain current: 120A
Pulsed drain current: 480A
Power dissipation: 150W
Case: PG-TDSON-8
Gate-source voltage: ±16V
On-state resistance: 1.2mΩ
Mounting: SMD
Gate charge: 128nC
Kind of package: reel; tape
Kind of channel: enhancement
Technology: OptiMOS™ 6
кількість в упаковці: 5000 шт
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; OptiMOS™ 6; unipolar; 40V; 120A; Idm: 480A
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 40V
Drain current: 120A
Pulsed drain current: 480A
Power dissipation: 150W
Case: PG-TDSON-8
Gate-source voltage: ±16V
On-state resistance: 1.2mΩ
Mounting: SMD
Gate charge: 128nC
Kind of package: reel; tape
Kind of channel: enhancement
Technology: OptiMOS™ 6
кількість в упаковці: 5000 шт
товару немає в наявності
В кошику
од. на суму грн.
| IAUC120N04S6L012ATMA1 |
|
Виробник: INFINEON TECHNOLOGIES
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; OptiMOS™ 6; unipolar; 40V; 120A; Idm: 480A
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 40V
Drain current: 120A
Pulsed drain current: 480A
Power dissipation: 115W
Case: PG-TDSON-8
Gate-source voltage: ±16V
On-state resistance: 1.7mΩ
Mounting: SMD
Gate charge: 80nC
Kind of package: reel; tape
Kind of channel: enhancement
Technology: OptiMOS™ 6
кількість в упаковці: 5000 шт
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; OptiMOS™ 6; unipolar; 40V; 120A; Idm: 480A
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 40V
Drain current: 120A
Pulsed drain current: 480A
Power dissipation: 115W
Case: PG-TDSON-8
Gate-source voltage: ±16V
On-state resistance: 1.7mΩ
Mounting: SMD
Gate charge: 80nC
Kind of package: reel; tape
Kind of channel: enhancement
Technology: OptiMOS™ 6
кількість в упаковці: 5000 шт
товару немає в наявності
В кошику
од. на суму грн.
| IAUC120N04S6N009ATMA1 |
|
Виробник: INFINEON TECHNOLOGIES
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; OptiMOS™ 6; unipolar; 40V; 120A; Idm: 480A
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 40V
Drain current: 120A
Pulsed drain current: 480A
Power dissipation: 150W
Case: PG-TDSON-8
Gate-source voltage: ±20V
On-state resistance: 0.9mΩ
Mounting: SMD
Gate charge: 33nC
Kind of package: reel; tape
Kind of channel: enhancement
Technology: OptiMOS™ 6
Features of semiconductor devices: logic level
кількість в упаковці: 5000 шт
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; OptiMOS™ 6; unipolar; 40V; 120A; Idm: 480A
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 40V
Drain current: 120A
Pulsed drain current: 480A
Power dissipation: 150W
Case: PG-TDSON-8
Gate-source voltage: ±20V
On-state resistance: 0.9mΩ
Mounting: SMD
Gate charge: 33nC
Kind of package: reel; tape
Kind of channel: enhancement
Technology: OptiMOS™ 6
Features of semiconductor devices: logic level
кількість в упаковці: 5000 шт
товару немає в наявності
В кошику
од. на суму грн.
| IAUC120N06S5L032ATMA1 |
|
Виробник: INFINEON TECHNOLOGIES
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 60V; 21A; Idm: 364A; 94W; PG-TDSON-8
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 60V
Drain current: 21A
Power dissipation: 94W
Case: PG-TDSON-8
Gate-source voltage: ±16V
On-state resistance: 4.4mΩ
Mounting: SMD
Gate charge: 51.5nC
Kind of package: reel; tape
Kind of channel: enhancement
Technology: OptiMOS™ 5
Pulsed drain current: 364A
кількість в упаковці: 5000 шт
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 60V; 21A; Idm: 364A; 94W; PG-TDSON-8
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 60V
Drain current: 21A
Power dissipation: 94W
Case: PG-TDSON-8
Gate-source voltage: ±16V
On-state resistance: 4.4mΩ
Mounting: SMD
Gate charge: 51.5nC
Kind of package: reel; tape
Kind of channel: enhancement
Technology: OptiMOS™ 5
Pulsed drain current: 364A
кількість в упаковці: 5000 шт
товару немає в наявності
В кошику
од. на суму грн.
| IAUC120N06S5N017ATMA1 |
|
Виробник: INFINEON TECHNOLOGIES
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 60V; 30A; Idm: 757A; 167W
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 60V
Drain current: 30A
Power dissipation: 167W
Case: PG-TDSON-8
Gate-source voltage: ±20V
On-state resistance: 1.9mΩ
Mounting: SMD
Gate charge: 95.9nC
Kind of package: reel; tape
Kind of channel: enhancement
Technology: OptiMOS™ 5
Pulsed drain current: 757A
кількість в упаковці: 5000 шт
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 60V; 30A; Idm: 757A; 167W
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 60V
Drain current: 30A
Power dissipation: 167W
Case: PG-TDSON-8
Gate-source voltage: ±20V
On-state resistance: 1.9mΩ
Mounting: SMD
Gate charge: 95.9nC
Kind of package: reel; tape
Kind of channel: enhancement
Technology: OptiMOS™ 5
Pulsed drain current: 757A
кількість в упаковці: 5000 шт
товару немає в наявності
В кошику
од. на суму грн.
| IAUC24N10S5L300ATMA1 |
|
Виробник: INFINEON TECHNOLOGIES
IAUC24N10S5L300 SMD N channel transistors
IAUC24N10S5L300 SMD N channel transistors
товару немає в наявності
В кошику
од. на суму грн.
| IAUC26N10S5L245ATMA1 |
|
Виробник: INFINEON TECHNOLOGIES
IAUC26N10S5L245 SMD N channel transistors
IAUC26N10S5L245 SMD N channel transistors
товару немає в наявності
В кошику
од. на суму грн.
| IAUC28N08S5L230ATMA1 |
|
Виробник: INFINEON TECHNOLOGIES
IAUC28N08S5L230 SMD N channel transistors
IAUC28N08S5L230 SMD N channel transistors
товару немає в наявності
В кошику
од. на суму грн.
| IAUC40N08S5L140ATMA1 |
|
Виробник: INFINEON TECHNOLOGIES
IAUC40N08S5L140 SMD N channel transistors
IAUC40N08S5L140 SMD N channel transistors
товару немає в наявності
В кошику
од. на суму грн.
| IAUC41N06S5L100ATMA1 |
|
Виробник: INFINEON TECHNOLOGIES
IAUC41N06S5L100 SMD N channel transistors
IAUC41N06S5L100 SMD N channel transistors
товару немає в наявності
В кошику
од. на суму грн.
| IAUC41N06S5N102ATMA1 |
|
Виробник: INFINEON TECHNOLOGIES
IAUC41N06S5N102 SMD N channel transistors
IAUC41N06S5N102 SMD N channel transistors
товару немає в наявності
В кошику
од. на суму грн.