Продукція > INFINEON TECHNOLOGIES > Всі товари виробника INFINEON TECHNOLOGIES (119460) > Сторінка 171 з 1991

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BGS 12AL7-4 E6327 BGS 12AL7-4 E6327 Infineon Technologies BGS12AL7-4.pdf?folderId=db3a304314dca3890115176d140c0ca3&fileId=db3a30431b3e89eb011b458d7a767d88 Description: IC SW SPDT 30MHZ - 3GHZ TSLP7-4
товару немає в наявності
В кошику  од. на суму  грн.
BFP740H6327XTSA1 BFP740H6327XTSA1 Infineon Technologies Infineon-BFP740-DS-v02_00-EN.pdf?fileId=5546d46265f064ff0166389680a24ea4 Description: RF TRANS NPN 4.7V 42GHZ SOT-343
Packaging: Tape & Reel (TR)
Package / Case: SC-82A, SOT-343
Mounting Type: Surface Mount
Transistor Type: NPN
Operating Temperature: 150°C (TJ)
Gain: 27dB
Power - Max: 160mW
Current - Collector (Ic) (Max): 30mA
Voltage - Collector Emitter Breakdown (Max): 4.7V
DC Current Gain (hFE) (Min) @ Ic, Vce: 160 @ 25mA, 3V
Frequency - Transition: 42GHz
Noise Figure (dB Typ @ f): 0.5dB ~ 0.85dB @ 1.8GHz ~ 6GHz
Supplier Device Package: PG-SOT343-4-2
Part Status: Active
товару немає в наявності
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ILD4001E6327HTSA1 ILD4001E6327HTSA1 Infineon Technologies ILD4001.pdf Description: IC LED DRIVER CTRLR PWM SC74
Packaging: Tape & Reel (TR)
Package / Case: SC-74, SOT-457
Mounting Type: Surface Mount
Number of Outputs: 1
Frequency: 500kHz
Type: DC DC Controller
Operating Temperature: -40°C ~ 150°C (TJ)
Applications: Lighting
Internal Switch(s): No
Topology: Step-Down (Buck)
Supplier Device Package: SC-74
Dimming: Analog, PWM
Voltage - Supply (Min): 4.5V
Voltage - Supply (Max): 40V
Part Status: Obsolete
товару немає в наявності
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ESD5V3L1U02LRHE6327XTSA1 ESD5V3L1U02LRHE6327XTSA1 Infineon Technologies ESD5V3L1U-02LRH.pdf Description: TVS DIODE 5.3VWM 10VC PGTSLP217
Packaging: Tape & Reel (TR)
Package / Case: SOD-882
Mounting Type: Surface Mount
Type: Zener
Operating Temperature: -55°C ~ 125°C (TJ)
Applications: General Purpose
Capacitance @ Frequency: 1pF @ 1MHz
Current - Peak Pulse (10/1000µs): 6A (8/20µs)
Voltage - Reverse Standoff (Typ): 5.3V (Max)
Supplier Device Package: PG-TSLP-2-17
Unidirectional Channels: 1
Voltage - Breakdown (Min): 6V
Voltage - Clamping (Max) @ Ipp: 10V (Typ)
Power Line Protection: No
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ILD4035E6327HTSA1 ILD4035E6327HTSA1 Infineon Technologies ILD4035.pdf Description: IC LED DRVR RGLTR PWM 350MA SC74
Packaging: Tape & Reel (TR)
Package / Case: SC-74, SOT-457
Mounting Type: Surface Mount
Number of Outputs: 1
Frequency: 120kHz
Type: DC DC Regulator
Applications: Lighting
Current - Output / Channel: 350mA
Internal Switch(s): Yes
Topology: Step-Down (Buck)
Supplier Device Package: SC-74
Dimming: Analog, PWM
Voltage - Supply (Min): 4.5V
Voltage - Supply (Max): 40V
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ILD4120E6327XUMA1 ILD4120E6327XUMA1 Infineon Technologies ILD4120.pdf Description: IC LED DRVR RGLTR PWM 1.2A 8DSO
Packaging: Tape & Reel (TR)
Package / Case: 8-SOIC (0.154", 3.90mm Width)
Mounting Type: Surface Mount
Number of Outputs: 1
Frequency: 500kHz
Type: DC DC Regulator
Operating Temperature: -40°C ~ 150°C (TJ)
Applications: Lighting
Current - Output / Channel: 1.2A
Internal Switch(s): Yes
Topology: Step-Down (Buck)
Supplier Device Package: PG-DSO-8
Dimming: Analog, PWM
Voltage - Supply (Min): 4.5V
Voltage - Supply (Max): 40V
Part Status: Obsolete
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ILD4120E6327XUMA1 ILD4120E6327XUMA1 Infineon Technologies ILD4120.pdf Description: IC LED DRVR RGLTR PWM 1.2A 8DSO
Packaging: Cut Tape (CT)
Package / Case: 8-SOIC (0.154", 3.90mm Width)
Mounting Type: Surface Mount
Number of Outputs: 1
Frequency: 500kHz
Type: DC DC Regulator
Operating Temperature: -40°C ~ 150°C (TJ)
Applications: Lighting
Current - Output / Channel: 1.2A
Internal Switch(s): Yes
Topology: Step-Down (Buck)
Supplier Device Package: PG-DSO-8
Dimming: Analog, PWM
Voltage - Supply (Min): 4.5V
Voltage - Supply (Max): 40V
Part Status: Obsolete
товару немає в наявності
В кошику  од. на суму  грн.
ILD4035E6327HTSA1 ILD4035E6327HTSA1 Infineon Technologies ILD4035.pdf Description: IC LED DRVR RGLTR PWM 350MA SC74
Packaging: Cut Tape (CT)
Package / Case: SC-74, SOT-457
Mounting Type: Surface Mount
Number of Outputs: 1
Frequency: 120kHz
Type: DC DC Regulator
Applications: Lighting
Current - Output / Channel: 350mA
Internal Switch(s): Yes
Topology: Step-Down (Buck)
Supplier Device Package: SC-74
Dimming: Analog, PWM
Voltage - Supply (Min): 4.5V
Voltage - Supply (Max): 40V
товару немає в наявності
В кошику  од. на суму  грн.
ILD4001E6327HTSA1 ILD4001E6327HTSA1 Infineon Technologies ILD4001.pdf Description: IC LED DRIVER CTRLR PWM SC74
Packaging: Cut Tape (CT)
Package / Case: SC-74, SOT-457
Mounting Type: Surface Mount
Number of Outputs: 1
Frequency: 500kHz
Type: DC DC Controller
Operating Temperature: -40°C ~ 150°C (TJ)
Applications: Lighting
Internal Switch(s): No
Topology: Step-Down (Buck)
Supplier Device Package: SC-74
Dimming: Analog, PWM
Voltage - Supply (Min): 4.5V
Voltage - Supply (Max): 40V
Part Status: Obsolete
товару немає в наявності
В кошику  од. на суму  грн.
ESD5V3L1U-02LRH E6327 ESD5V3L1U-02LRH E6327 Infineon Technologies esd5v3l1u-02lrh.pdf?folderId=db3a30431f848401011fcbf2ab4c04c4&fileId=db3a3043284aacd8012895a71c230078 Description: TVS DIODE 5.3VWM 10VC TSLP2-17
товару немає в наявності
В кошику  од. на суму  грн.
ESD5V3L1U-02LRH E6327 ESD5V3L1U-02LRH E6327 Infineon Technologies esd5v3l1u-02lrh.pdf?folderId=db3a30431f848401011fcbf2ab4c04c4&fileId=db3a3043284aacd8012895a71c230078 Description: TVS DIODE 5.3VWM 10VC TSLP2-17
товару немає в наявності
В кошику  од. на суму  грн.
BGS 12AL7-4 E6327 BGS 12AL7-4 E6327 Infineon Technologies BGS12AL7-4.pdf?folderId=db3a304314dca3890115176d140c0ca3&fileId=db3a30431b3e89eb011b458d7a767d88 Description: IC SW SPDT 30MHZ - 3GHZ TSLP7-4
на замовлення 6656 шт:
термін постачання 21-31 дні (днів)
В кошику  од. на суму  грн.
BGS 12AL7-4 E6327 BGS 12AL7-4 E6327 Infineon Technologies BGS12AL7-4.pdf?folderId=db3a304314dca3890115176d140c0ca3&fileId=db3a30431b3e89eb011b458d7a767d88 Description: IC SW SPDT 30MHZ - 3GHZ TSLP7-4
на замовлення 6656 шт:
термін постачання 21-31 дні (днів)
В кошику  од. на суму  грн.
BFP740H6327XTSA1 BFP740H6327XTSA1 Infineon Technologies Infineon-BFP740-DS-v02_00-EN.pdf?fileId=5546d46265f064ff0166389680a24ea4 Description: RF TRANS NPN 4.7V 42GHZ SOT-343
Packaging: Cut Tape (CT)
Package / Case: SC-82A, SOT-343
Mounting Type: Surface Mount
Transistor Type: NPN
Operating Temperature: 150°C (TJ)
Gain: 27dB
Power - Max: 160mW
Current - Collector (Ic) (Max): 30mA
Voltage - Collector Emitter Breakdown (Max): 4.7V
DC Current Gain (hFE) (Min) @ Ic, Vce: 160 @ 25mA, 3V
Frequency - Transition: 42GHz
Noise Figure (dB Typ @ f): 0.5dB ~ 0.85dB @ 1.8GHz ~ 6GHz
Supplier Device Package: PG-SOT343-4-2
Part Status: Active
на замовлення 2115 шт:
термін постачання 21-31 дні (днів)
10+33.64 грн
14+22.83 грн
25+20.37 грн
100+16.61 грн
250+15.42 грн
500+14.71 грн
1000+13.88 грн
Мінімальне замовлення: 10
В кошику  од. на суму  грн.
IR3084AMTRPBF IR3084AMTRPBF Infineon Technologies IR3084A.pdf Description: IC CTLR XPHASE 28-MLPQ
Packaging: Cut Tape (CT)
Package / Case: 28-VFQFN Exposed Pad
Mounting Type: Surface Mount
Operating Temperature: 0°C ~ 100°C
Voltage - Supply: 9.5V ~ 16V
Applications: Processor
Current - Supply: 14mA
Supplier Device Package: 28-MLPQ (5x5)
на замовлення 2259 шт:
термін постачання 21-31 дні (днів)
2+185.41 грн
10+160.77 грн
25+155.13 грн
100+141.36 грн
250+138.20 грн
500+137.15 грн
1000+132.82 грн
Мінімальне замовлення: 2
В кошику  од. на суму  грн.
IR3086AMTRPBF IR3086AMTRPBF Infineon Technologies IR3086APbF.pdf Description: IC CTLR XPHASE 28-MLPQ
Packaging: Cut Tape (CT)
Package / Case: 20-VFQFN Exposed Pad
Mounting Type: Surface Mount
Operating Temperature: 0°C ~ 125°C
Voltage - Supply: 8.4V ~ 14V
Applications: Processor
Current - Supply: 10mA
Supplier Device Package: 20-MLPQ (4x4)
на замовлення 2770 шт:
термін постачання 21-31 дні (днів)
3+121.26 грн
10+99.97 грн
25+95.71 грн
100+85.37 грн
250+83.22 грн
500+81.91 грн
1000+79.50 грн
Мінімальне замовлення: 3
В кошику  од. на суму  грн.
IR3621MTRPBF IR3621MTRPBF Infineon Technologies IR3621(PbF).pdf Description: IC REG CTRLR BUCK 32MLPQ
товару немає в наявності
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IRF1407STRLPBF IRF1407STRLPBF Infineon Technologies infineon-irf1407spbf-ds-en.pdf Description: MOSFET N-CH 75V 100A D2PAK
Packaging: Cut Tape (CT)
Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 100A (Tc)
Rds On (Max) @ Id, Vgs: 7.8mOhm @ 78A, 10V
Power Dissipation (Max): 3.8W (Ta), 200W (Tc)
Vgs(th) (Max) @ Id: 4V @ 250µA
Supplier Device Package: D2PAK
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 75 V
Gate Charge (Qg) (Max) @ Vgs: 250 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 5600 pF @ 25 V
на замовлення 3228 шт:
термін постачання 21-31 дні (днів)
2+185.41 грн
10+115.34 грн
100+79.34 грн
Мінімальне замовлення: 2
В кошику  од. на суму  грн.
IRF2804STRL7PP IRF2804STRL7PP Infineon Technologies IRF2804S-7P.pdf Description: MOSFET N-CH 40V 160A D2PAK
Packaging: Cut Tape (CT)
Package / Case: TO-263-7, D2PAK (6 Leads + Tab), TO-263CB
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 160A (Tc)
Rds On (Max) @ Id, Vgs: 1.6mOhm @ 160A, 10V
Power Dissipation (Max): 330W (Tc)
Vgs(th) (Max) @ Id: 4V @ 250µA
Supplier Device Package: D2PAK (7-Lead)
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 40 V
Gate Charge (Qg) (Max) @ Vgs: 260 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 6930 pF @ 25 V
товару немає в наявності
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IRF2804STRLPBF IRF2804STRLPBF Infineon Technologies irf2804pbf.pdf?fileId=5546d462533600a4015355de76f818e3 Description: MOSFET N-CH 40V 75A D2PAK
Packaging: Cut Tape (CT)
Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 75A (Tc)
Rds On (Max) @ Id, Vgs: 2mOhm @ 75A, 10V
Power Dissipation (Max): 300W (Tc)
Vgs(th) (Max) @ Id: 4V @ 250µA
Supplier Device Package: D2PAK
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 40 V
Gate Charge (Qg) (Max) @ Vgs: 240 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 6450 pF @ 25 V
на замовлення 1185 шт:
термін постачання 21-31 дні (днів)
2+241.74 грн
10+151.95 грн
100+105.76 грн
Мінімальне замовлення: 2
В кошику  од. на суму  грн.
IRF2805STRLPBF IRF2805STRLPBF Infineon Technologies irf2805spbf.pdf?fileId=5546d462533600a4015355de9aad18ed Description: MOSFET N-CH 55V 135A D2PAK
Packaging: Cut Tape (CT)
Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 135A (Tc)
Rds On (Max) @ Id, Vgs: 4.7mOhm @ 104A, 10V
Power Dissipation (Max): 200W (Tc)
Vgs(th) (Max) @ Id: 4V @ 250µA
Supplier Device Package: D2PAK
Part Status: Not For New Designs
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 55 V
Gate Charge (Qg) (Max) @ Vgs: 230 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 5110 pF @ 25 V
товару немає в наявності
В кошику  од. на суму  грн.
IRF2807ZSTRLPBF IRF2807ZSTRLPBF Infineon Technologies irf2807zpbf.pdf?fileId=5546d462533600a4015355debf4518f9 Description: MOSFET N-CH 75V 75A D2PAK
Packaging: Cut Tape (CT)
Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 75A (Tc)
Rds On (Max) @ Id, Vgs: 9.4mOhm @ 53A, 10V
Power Dissipation (Max): 170W (Tc)
Vgs(th) (Max) @ Id: 4V @ 250µA
Supplier Device Package: D2PAK
Part Status: Not For New Designs
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 75 V
Gate Charge (Qg) (Max) @ Vgs: 110 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 3270 pF @ 25 V
товару немає в наявності
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IRF3805STRL-7PP IRF3805STRL-7PP Infineon Technologies IRSDS18836-1.pdf?t.download=true&u=5oefqw Description: MOSFET N-CH 55V 160A D2PAK
Packaging: Cut Tape (CT)
Package / Case: TO-263-7, D2PAK (6 Leads + Tab), TO-263CB
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 160A (Tc)
Rds On (Max) @ Id, Vgs: 2.6mOhm @ 140A, 10V
Power Dissipation (Max): 300W (Tc)
Vgs(th) (Max) @ Id: 4V @ 250µA
Supplier Device Package: D2PAK (7-Lead)
Part Status: Not For New Designs
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 55 V
Gate Charge (Qg) (Max) @ Vgs: 200 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 7820 pF @ 25 V
товару немає в наявності
В кошику  од. на суму  грн.
IRF3808STRLPBF IRF3808STRLPBF Infineon Technologies irf3808spbf.pdf?fileId=5546d462533600a4015364c3bcef29bc Description: MOSFET N-CH 75V 106A D2PAK
Packaging: Cut Tape (CT)
Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 106A (Tc)
Rds On (Max) @ Id, Vgs: 7mOhm @ 82A, 10V
Power Dissipation (Max): 200W (Tc)
Vgs(th) (Max) @ Id: 4V @ 250µA
Supplier Device Package: D2PAK
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 75 V
Gate Charge (Qg) (Max) @ Vgs: 220 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 5310 pF @ 25 V
Voltage Coupled to Gate Charge (Qg) (Max) @ Vgs: 10
Voltage Coupled to Input Capacitance (Ciss) (Max) @ Vds: 25
на замовлення 1184 шт:
термін постачання 21-31 дні (днів)
2+283.99 грн
10+179.75 грн
100+126.30 грн
Мінімальне замовлення: 2
В кошику  од. на суму  грн.
IRF4905STRLPBF IRF4905STRLPBF Infineon Technologies irf4905spbf.pdf?fileId=5546d462533600a4015355e331c41980 description Description: MOSFET P-CH 55V 42A D2PAK
Packaging: Cut Tape (CT)
Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: P-Channel
Current - Continuous Drain (Id) @ 25°C: 42A (Tc)
Rds On (Max) @ Id, Vgs: 20mOhm @ 42A, 10V
Power Dissipation (Max): 170W (Tc)
Vgs(th) (Max) @ Id: 4V @ 250µA
Supplier Device Package: D2PAK
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 55 V
Gate Charge (Qg) (Max) @ Vgs: 180 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 3500 pF @ 25 V
Voltage Coupled to Gate Charge (Qg) (Max) @ Vgs: 10
Voltage Coupled to Input Capacitance (Ciss) (Max) @ Vds: 25
на замовлення 16611 шт:
термін постачання 21-31 дні (днів)
2+245.65 грн
10+154.66 грн
100+107.80 грн
Мінімальне замовлення: 2
В кошику  од. на суму  грн.
IRF5210STRLPBF IRF5210STRLPBF Infineon Technologies irf5210spbf.pdf?fileId=5546d462533600a4015355e35f77198e Description: MOSFET P-CH 100V 38A D2PAK
Packaging: Cut Tape (CT)
Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: P-Channel
Current - Continuous Drain (Id) @ 25°C: 38A (Tc)
Rds On (Max) @ Id, Vgs: 60mOhm @ 38A, 10V
Power Dissipation (Max): 3.1W (Ta), 170W (Tc)
Vgs(th) (Max) @ Id: 4V @ 250µA
Supplier Device Package: D2PAK
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 100 V
Gate Charge (Qg) (Max) @ Vgs: 230 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 2780 pF @ 25 V
на замовлення 5495 шт:
термін постачання 21-31 дні (днів)
2+281.64 грн
10+178.40 грн
100+125.31 грн
Мінімальне замовлення: 2
В кошику  од. на суму  грн.
IRF5801TRPBF IRF5801TRPBF Infineon Technologies irf5801pbf.pdf?fileId=5546d462533600a4015355e3be0919ac Description: MOSFET N-CH 200V 600MA MICRO6
Packaging: Cut Tape (CT)
Package / Case: SOT-23-6 Thin, TSOT-23-6
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 600mA (Ta)
Rds On (Max) @ Id, Vgs: 2.2Ohm @ 360mA, 10V
Power Dissipation (Max): 2W (Ta)
Vgs(th) (Max) @ Id: 5.5V @ 250µA
Supplier Device Package: Micro6™(TSOP-6)
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±30V
Drain to Source Voltage (Vdss): 200 V
Gate Charge (Qg) (Max) @ Vgs: 3.9 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 88 pF @ 25 V
на замовлення 3865 шт:
термін постачання 21-31 дні (днів)
7+46.94 грн
11+27.95 грн
100+17.94 грн
500+12.79 грн
1000+11.48 грн
Мінімальне замовлення: 7
В кошику  од. на суму  грн.
IRF5802TRPBF IRF5802TRPBF Infineon Technologies irf5802pbf.pdf?fileId=5546d462533600a4015355e3d4d319b2 Description: MOSFET N-CH 150V 900MA MICRO6
Packaging: Cut Tape (CT)
Package / Case: SOT-23-6 Thin, TSOT-23-6
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 900mA (Ta)
Rds On (Max) @ Id, Vgs: 1.2Ohm @ 540mA, 10V
Power Dissipation (Max): 2W (Ta)
Vgs(th) (Max) @ Id: 5.5V @ 250µA
Supplier Device Package: Micro6™(TSOP-6)
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±30V
Drain to Source Voltage (Vdss): 150 V
Gate Charge (Qg) (Max) @ Vgs: 6.8 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 88 pF @ 25 V
на замовлення 6159 шт:
термін постачання 21-31 дні (днів)
8+43.03 грн
12+25.84 грн
100+16.53 грн
500+11.75 грн
1000+10.53 грн
Мінімальне замовлення: 8
В кошику  од. на суму  грн.
IRF5803TRPBF IRF5803TRPBF Infineon Technologies irf5803pbf.pdf?fileId=5546d462533600a4015355e3e4e019b6 Description: MOSFET P-CH 40V 3.4A MICRO6
Packaging: Cut Tape (CT)
Package / Case: SOT-23-6 Thin, TSOT-23-6
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: P-Channel
Current - Continuous Drain (Id) @ 25°C: 3.4A (Ta)
Rds On (Max) @ Id, Vgs: 112mOhm @ 3.4A, 10V
Power Dissipation (Max): 2W (Ta)
Vgs(th) (Max) @ Id: 3V @ 250µA
Supplier Device Package: Micro6™(TSOP-6)
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 40 V
Gate Charge (Qg) (Max) @ Vgs: 37 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 1110 pF @ 25 V
товару немає в наявності
В кошику  од. на суму  грн.
IRF5852TRPBF IRF5852TRPBF Infineon Technologies IR_PartNumberingSystem.pdf Description: MOSFET 2N-CH 20V 2.7A 6TSOP
Packaging: Cut Tape (CT)
Package / Case: SOT-23-6 Thin, TSOT-23-6
Mounting Type: Surface Mount
Configuration: 2 N-Channel (Dual)
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
Power - Max: 960mW
Drain to Source Voltage (Vdss): 20V
Current - Continuous Drain (Id) @ 25°C: 2.7A
Input Capacitance (Ciss) (Max) @ Vds: 400pF @ 15V
Rds On (Max) @ Id, Vgs: 90mOhm @ 2.7A, 4.5V
Gate Charge (Qg) (Max) @ Vgs: 6nC @ 4.5V
FET Feature: Logic Level Gate
Vgs(th) (Max) @ Id: 1.25V @ 250µA
Supplier Device Package: 6-TSOP
Part Status: Obsolete
товару немає в наявності
В кошику  од. на суму  грн.
IRF6215STRLPBF IRF6215STRLPBF Infineon Technologies irf6215spbf.pdf?fileId=5546d462533600a4015355e454d819d2 Description: MOSFET P-CH 150V 13A D2PAK
Packaging: Cut Tape (CT)
Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: P-Channel
Current - Continuous Drain (Id) @ 25°C: 13A (Tc)
Rds On (Max) @ Id, Vgs: 290mOhm @ 6.6A, 10V
Power Dissipation (Max): 3.8W (Ta), 110W (Tc)
Vgs(th) (Max) @ Id: 4V @ 250µA
Supplier Device Package: D2PAK
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 150 V
Gate Charge (Qg) (Max) @ Vgs: 66 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 860 pF @ 25 V
товару немає в наявності
В кошику  од. на суму  грн.
IRF6216TRPBF IRF6216TRPBF Infineon Technologies irf6216pbf.pdf?fileId=5546d462533600a4015355e4623c19d7 Description: MOSFET P-CH 150V 2.2A 8SO
Packaging: Cut Tape (CT)
Package / Case: 8-SOIC (0.154", 3.90mm Width)
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: P-Channel
Current - Continuous Drain (Id) @ 25°C: 2.2A (Ta)
Rds On (Max) @ Id, Vgs: 240mOhm @ 1.3A, 10V
Power Dissipation (Max): 2.5W (Ta)
Vgs(th) (Max) @ Id: 5V @ 250µA
Supplier Device Package: 8-SO
Part Status: Obsolete
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 150 V
Gate Charge (Qg) (Max) @ Vgs: 49 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 1280 pF @ 25 V
товару немає в наявності
В кошику  од. на суму  грн.
IRF6217TRPBF IRF6217TRPBF Infineon Technologies irf6217pbf.pdf?fileId=5546d462533600a4015355e472de19db Description: MOSFET P-CH 150V 700MA 8SO
товару немає в наявності
В кошику  од. на суму  грн.
IRF7240TRPBF IRF7240TRPBF Infineon Technologies irf7240pbf.pdf?fileId=5546d462533600a4015355f19e0d1af2 Description: MOSFET P-CH 40V 10.5A 8SO
Packaging: Cut Tape (CT)
Package / Case: 8-SOIC (0.154", 3.90mm Width)
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: P-Channel
Current - Continuous Drain (Id) @ 25°C: 10.5A (Ta)
Rds On (Max) @ Id, Vgs: 15mOhm @ 10.5A, 10V
Power Dissipation (Max): 2.5W (Ta)
Vgs(th) (Max) @ Id: 3V @ 250µA
Supplier Device Package: 8-SO
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 40 V
Gate Charge (Qg) (Max) @ Vgs: 110 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 9250 pF @ 25 V
на замовлення 15571 шт:
термін постачання 21-31 дні (днів)
3+122.83 грн
10+75.19 грн
100+50.54 грн
500+37.51 грн
1000+34.40 грн
Мінімальне замовлення: 3
В кошику  од. на суму  грн.
IRF7380TRPBF IRF7380TRPBF Infineon Technologies irf7380pbf.pdf?fileId=5546d462533600a4015355f9da901b89 Description: MOSFET 2N-CH 80V 3.6A 8SO
Packaging: Cut Tape (CT)
Package / Case: 8-SOIC (0.154", 3.90mm Width)
Mounting Type: Surface Mount
Configuration: 2 N-Channel (Dual)
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
Power - Max: 2W
Drain to Source Voltage (Vdss): 80V
Current - Continuous Drain (Id) @ 25°C: 3.6A
Input Capacitance (Ciss) (Max) @ Vds: 660pF @ 25V
Rds On (Max) @ Id, Vgs: 73mOhm @ 2.2A, 10V
Gate Charge (Qg) (Max) @ Vgs: 23nC @ 10V
FET Feature: Logic Level Gate
Vgs(th) (Max) @ Id: 4V @ 250µA
Supplier Device Package: 8-SO
Part Status: Active
на замовлення 297 шт:
термін постачання 21-31 дні (днів)
5+70.41 грн
10+49.42 грн
100+37.85 грн
Мінімальне замовлення: 5
В кошику  од. на суму  грн.
IRF7410TRPBF IRF7410TRPBF Infineon Technologies irf7410pbf.pdf?fileId=5546d462533600a4015355fa75d71bb0 Description: MOSFET P-CH 12V 16A 8SO
Packaging: Cut Tape (CT)
Package / Case: 8-SOIC (0.154", 3.90mm Width)
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: P-Channel
Current - Continuous Drain (Id) @ 25°C: 16A (Ta)
Rds On (Max) @ Id, Vgs: 7mOhm @ 16A, 4.5V
Power Dissipation (Max): 2.5W (Ta)
Vgs(th) (Max) @ Id: 900mV @ 250µA
Supplier Device Package: 8-SO
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 1.8V, 4.5V
Vgs (Max): ±8V
Drain to Source Voltage (Vdss): 12 V
Gate Charge (Qg) (Max) @ Vgs: 91 nC @ 4.5 V
Input Capacitance (Ciss) (Max) @ Vds: 8676 pF @ 10 V
товару немає в наявності
В кошику  од. на суму  грн.
IRF7425TRPBF IRF7425TRPBF Infineon Technologies irf7425pbf.pdf?fileId=5546d462533600a4015355fb1c361bdc Description: MOSFET P-CH 20V 15A 8SO
Packaging: Cut Tape (CT)
Package / Case: 8-SOIC (0.154", 3.90mm Width)
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: P-Channel
Current - Continuous Drain (Id) @ 25°C: 15A (Ta)
Rds On (Max) @ Id, Vgs: 8.2mOhm @ 15A, 4.5V
Power Dissipation (Max): 2.5W (Ta)
Vgs(th) (Max) @ Id: 1.2V @ 250µA
Supplier Device Package: 8-SO
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 2.5V, 4.5V
Vgs (Max): ±12V
Drain to Source Voltage (Vdss): 20 V
Gate Charge (Qg) (Max) @ Vgs: 130 nC @ 4.5 V
Input Capacitance (Ciss) (Max) @ Vds: 7980 pF @ 15 V
на замовлення 3133 шт:
термін постачання 21-31 дні (днів)
3+114.22 грн
10+69.53 грн
100+46.54 грн
500+34.42 грн
1000+31.45 грн
2000+30.97 грн
Мінімальне замовлення: 3
В кошику  од. на суму  грн.
IRF7467TRPBF IRF7467TRPBF Infineon Technologies IRF7467PBF.pdf Description: MOSFET N-CH 30V 11A 8SO
товару немає в наявності
В кошику  од. на суму  грн.
IRF7484TRPBF IRF7484TRPBF Infineon Technologies IRF7484PbF.pdf Description: MOSFET N-CH 40V 14A 8SO
Packaging: Cut Tape (CT)
Package / Case: 8-SOIC (0.154", 3.90mm Width)
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 14A (Ta)
Rds On (Max) @ Id, Vgs: 10mOhm @ 14A, 7V
Power Dissipation (Max): 2.5W (Ta)
Vgs(th) (Max) @ Id: 2V @ 250µA
Supplier Device Package: 8-SO
Drive Voltage (Max Rds On, Min Rds On): 7V
Vgs (Max): ±8V
Drain to Source Voltage (Vdss): 40 V
Gate Charge (Qg) (Max) @ Vgs: 100 nC @ 7 V
Input Capacitance (Ciss) (Max) @ Vds: 3520 pF @ 25 V
товару немає в наявності
В кошику  од. на суму  грн.
IRF7490TRPBF IRF7490TRPBF Infineon Technologies irf7490pbf.pdf?fileId=5546d462533600a4015355ffaf0b1c38 Description: MOSFET N-CH 100V 5.4A 8SO
Packaging: Cut Tape (CT)
Package / Case: 8-SOIC (0.154", 3.90mm Width)
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 5.4A (Ta)
Rds On (Max) @ Id, Vgs: 39mOhm @ 3.2A, 10V
Power Dissipation (Max): 2.5W (Ta)
Vgs(th) (Max) @ Id: 4V @ 250µA
Supplier Device Package: 8-SO
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 100 V
Gate Charge (Qg) (Max) @ Vgs: 56 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 1720 pF @ 25 V
на замовлення 13687 шт:
термін постачання 21-31 дні (днів)
4+97.01 грн
10+58.76 грн
100+38.93 грн
500+28.53 грн
1000+25.95 грн
2000+23.79 грн
Мінімальне замовлення: 4
В кошику  од. на суму  грн.
IRF7492TRPBF IRF7492TRPBF Infineon Technologies IRF7492PbF.pdf Description: MOSFET N-CH 200V 3.7A 8SO
Packaging: Cut Tape (CT)
Package / Case: 8-SOIC (0.154", 3.90mm Width)
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 3.7A (Ta)
Rds On (Max) @ Id, Vgs: 79mOhm @ 2.2A, 10V
Power Dissipation (Max): 2.5W (Ta)
Vgs(th) (Max) @ Id: 2.5V @ 250µA
Supplier Device Package: 8-SO
Part Status: Obsolete
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 200 V
Gate Charge (Qg) (Max) @ Vgs: 59 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 1820 pF @ 25 V
товару немає в наявності
В кошику  од. на суму  грн.
IRF7507TRPBF IRF7507TRPBF Infineon Technologies irf7507.pdf Description: MOSFET N/P-CH 20V 2.4A MICRO8
Packaging: Cut Tape (CT)
Package / Case: 8-TSSOP, 8-MSOP (0.118", 3.00mm Width)
Mounting Type: Surface Mount
Configuration: N and P-Channel
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
Power - Max: 1.25W
Drain to Source Voltage (Vdss): 20V
Current - Continuous Drain (Id) @ 25°C: 2.4A, 1.7A
Input Capacitance (Ciss) (Max) @ Vds: 260pF @ 15V
Rds On (Max) @ Id, Vgs: 140mOhm @ 1.7A, 4.5V
Gate Charge (Qg) (Max) @ Vgs: 8nC @ 4.5V
FET Feature: Logic Level Gate
Vgs(th) (Max) @ Id: 700mV @ 250µA
Supplier Device Package: Micro8™
Part Status: Not For New Designs
товару немає в наявності
В кошику  од. на суму  грн.
IRF7701TRPBF IRF7701TRPBF Infineon Technologies IRF7701PbF.pdf Description: MOSFET P-CH 12V 10A 8TSSOP
товару немає в наявності
В кошику  од. на суму  грн.
IRF7705TRPBF IRF7705TRPBF Infineon Technologies IRF7705PBF.pdf Description: MOSFET P-CH 30V 8A 8TSSOP
Packaging: Cut Tape (CT)
Package / Case: 8-TSSOP (0.173", 4.40mm Width)
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: P-Channel
Current - Continuous Drain (Id) @ 25°C: 8A (Tc)
Rds On (Max) @ Id, Vgs: 18mOhm @ 8A, 10V
Power Dissipation (Max): 1.5W (Ta)
Vgs(th) (Max) @ Id: 2.5V @ 250µA
Supplier Device Package: 8-TSSOP
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 30 V
Gate Charge (Qg) (Max) @ Vgs: 88 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 2774 pF @ 25 V
товару немає в наявності
В кошику  од. на суму  грн.
IRF7752TRPBF IRF7752TRPBF Infineon Technologies IRF7752PBF.pdf Description: MOSFET 2N-CH 30V 4.6A 8TSSOP
товару немає в наявності
В кошику  од. на суму  грн.
IRF7853TRPBF IRF7853TRPBF Infineon Technologies irf7853pbf.pdf?fileId=5546d462533600a40153560c4d2f1d27 Description: MOSFET N-CH 100V 8.3A 8SO
Packaging: Cut Tape (CT)
Package / Case: 8-SOIC (0.154", 3.90mm Width)
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 8.3A (Ta)
Rds On (Max) @ Id, Vgs: 18mOhm @ 8.3A, 10V
Power Dissipation (Max): 2.5W (Ta)
Vgs(th) (Max) @ Id: 4.9V @ 100µA
Supplier Device Package: 8-SO
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 100 V
Gate Charge (Qg) (Max) @ Vgs: 39 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 1640 pF @ 25 V
на замовлення 2916 шт:
термін постачання 21-31 дні (днів)
3+123.61 грн
10+75.86 грн
100+51.08 грн
500+37.96 грн
1000+35.07 грн
Мінімальне замовлення: 3
В кошику  од. на суму  грн.
IRF7854TRPBF IRF7854TRPBF Infineon Technologies irf7854pbf.pdf?fileId=5546d462533600a40153560c559a1d29 Description: MOSFET N-CH 80V 10A 8SO
Packaging: Cut Tape (CT)
Package / Case: 8-SOIC (0.154", 3.90mm Width)
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 10A (Ta)
Rds On (Max) @ Id, Vgs: 13.4mOhm @ 10A, 10V
Power Dissipation (Max): 2.5W (Ta)
Vgs(th) (Max) @ Id: 4.9V @ 100µA
Supplier Device Package: 8-SO
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 80 V
Gate Charge (Qg) (Max) @ Vgs: 41 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 1620 pF @ 25 V
на замовлення 14208 шт:
термін постачання 21-31 дні (днів)
2+159.60 грн
10+98.24 грн
100+66.63 грн
500+49.83 грн
1000+45.74 грн
2000+43.29 грн
Мінімальне замовлення: 2
В кошику  од. на суму  грн.
IRF7855TRPBF IRF7855TRPBF Infineon Technologies irf7855pbf.pdf?fileId=5546d462533600a40153560c60181d2b Description: MOSFET N-CH 60V 12A 8SO
Packaging: Cut Tape (CT)
Package / Case: 8-SOIC (0.154", 3.90mm Width)
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 12A (Ta)
Rds On (Max) @ Id, Vgs: 9.4mOhm @ 12A, 10V
Power Dissipation (Max): 2.5W (Ta)
Vgs(th) (Max) @ Id: 4.9V @ 100µA
Supplier Device Package: 8-SO
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 60 V
Gate Charge (Qg) (Max) @ Vgs: 39 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 1560 pF @ 25 V
Voltage Coupled to Gate Charge (Qg) (Max) @ Vgs: 10
Voltage Coupled to Input Capacitance (Ciss) (Max) @ Vds: 25
на замовлення 8296 шт:
термін постачання 21-31 дні (днів)
3+136.13 грн
10+81.89 грн
100+65.17 грн
500+50.44 грн
1000+49.39 грн
Мінімальне замовлення: 3
В кошику  од. на суму  грн.
IRF7904TRPBF IRF7904TRPBF Infineon Technologies irf7904pbf.pdf?fileId=5546d462533600a40153560c7f8c1d33 Description: MOSFET 2N-CH 30V 7.6A/11A 8SO
Packaging: Cut Tape (CT)
Package / Case: 8-SOIC (0.154", 3.90mm Width)
Mounting Type: Surface Mount
Configuration: 2 N-Channel (Half Bridge)
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
Power - Max: 1.4W, 2W
Drain to Source Voltage (Vdss): 30V
Current - Continuous Drain (Id) @ 25°C: 7.6A, 11A
Input Capacitance (Ciss) (Max) @ Vds: 910pF @ 15V
Rds On (Max) @ Id, Vgs: 16.2mOhm @ 7.6A, 10V
Gate Charge (Qg) (Max) @ Vgs: 11nC @ 4.5V
FET Feature: Logic Level Gate
Vgs(th) (Max) @ Id: 2.25V @ 25µA
Supplier Device Package: 8-SO
Part Status: Not For New Designs
товару немає в наявності
В кошику  од. на суму  грн.
IRF7907TRPBF IRF7907TRPBF Infineon Technologies irf7907pbf.pdf?fileId=5546d462533600a40153560c992e1d39 Description: MOSFET 2N-CH 30V 9.1A/11A 8SO
Packaging: Cut Tape (CT)
Package / Case: 8-SOIC (0.154", 3.90mm Width)
Mounting Type: Surface Mount
Configuration: 2 N-Channel (Dual)
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
Power - Max: 2W
Drain to Source Voltage (Vdss): 30V
Current - Continuous Drain (Id) @ 25°C: 9.1A, 11A
Input Capacitance (Ciss) (Max) @ Vds: 850pF @ 15V
Rds On (Max) @ Id, Vgs: 16.4mOhm @ 9.1A, 10V
Gate Charge (Qg) (Max) @ Vgs: 10nC @ 4.5V
FET Feature: Logic Level Gate
Vgs(th) (Max) @ Id: 2.35V @ 25µA
Supplier Device Package: 8-SO
Part Status: Active
на замовлення 52959 шт:
термін постачання 21-31 дні (днів)
4+104.05 грн
10+63.06 грн
100+41.90 грн
500+30.80 грн
1000+28.05 грн
2000+25.74 грн
Мінімальне замовлення: 4
В кошику  од. на суму  грн.
IRF8010STRLPBF IRF8010STRLPBF Infineon Technologies irf8010spbf.pdf?fileId=5546d462533600a40153560cd69a1d49 Description: MOSFET N-CH 100V 80A D2PAK
Packaging: Cut Tape (CT)
Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 80A (Tc)
Rds On (Max) @ Id, Vgs: 15mOhm @ 45A, 10V
Power Dissipation (Max): 260W (Tc)
Vgs(th) (Max) @ Id: 4V @ 250µA
Supplier Device Package: D2PAK
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 100 V
Gate Charge (Qg) (Max) @ Vgs: 120 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 3830 pF @ 25 V
на замовлення 1825 шт:
термін постачання 21-31 дні (днів)
2+232.35 грн
10+145.62 грн
100+101.12 грн
Мінімальне замовлення: 2
В кошику  од. на суму  грн.
IRF9530NSTRLPBF IRF9530NSTRLPBF Infineon Technologies irf9530nspbf.pdf?fileId=5546d462533600a401535611c2011dc3 Description: MOSFET P-CH 100V 14A D2PAK
Packaging: Cut Tape (CT)
Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: P-Channel
Current - Continuous Drain (Id) @ 25°C: 14A (Tc)
Rds On (Max) @ Id, Vgs: 200mOhm @ 8.4A, 10V
Power Dissipation (Max): 3.8W (Ta), 79W (Tc)
Vgs(th) (Max) @ Id: 4V @ 250µA
Supplier Device Package: D2PAK
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 100 V
Gate Charge (Qg) (Max) @ Vgs: 58 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 760 pF @ 25 V
на замовлення 8828 шт:
термін постачання 21-31 дні (днів)
3+131.43 грн
10+80.76 грн
100+54.32 грн
Мінімальне замовлення: 3
В кошику  од. на суму  грн.
IRF9540NSTRLPBF IRF9540NSTRLPBF Infineon Technologies irf9540nspbf.pdf?fileId=5546d462533600a401535611d92a1dca description Description: MOSFET P-CH 100V 23A D2PAK
Packaging: Cut Tape (CT)
Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: P-Channel
Current - Continuous Drain (Id) @ 25°C: 23A (Tc)
Rds On (Max) @ Id, Vgs: 117mOhm @ 14A, 10V
Power Dissipation (Max): 3.1W (Ta), 110W (Tc)
Vgs(th) (Max) @ Id: 4V @ 250µA
Supplier Device Package: D2PAK
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 100 V
Gate Charge (Qg) (Max) @ Vgs: 110 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 1450 pF @ 25 V
Voltage Coupled to Gate Charge (Qg) (Max) @ Vgs: 10
Voltage Coupled to Input Capacitance (Ciss) (Max) @ Vds: 25
на замовлення 16034 шт:
термін постачання 21-31 дні (днів)
2+165.85 грн
10+102.23 грн
100+69.63 грн
Мінімальне замовлення: 2
В кошику  од. на суму  грн.
IRFL024NTRPBF IRFL024NTRPBF Infineon Technologies irfl024npbf.pdf?fileId=5546d462533600a401535627cdd51fae Description: MOSFET N-CH 55V 2.8A SOT223
Packaging: Cut Tape (CT)
Package / Case: TO-261-4, TO-261AA
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 2.8A (Ta)
Rds On (Max) @ Id, Vgs: 75mOhm @ 2.8A, 10V
Power Dissipation (Max): 1W (Ta)
Vgs(th) (Max) @ Id: 4V @ 250µA
Supplier Device Package: SOT-223
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 55 V
Gate Charge (Qg) (Max) @ Vgs: 18.3 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 400 pF @ 25 V
на замовлення 6 шт:
термін постачання 21-31 дні (днів)
5+64.93 грн
Мінімальне замовлення: 5
В кошику  од. на суму  грн.
IRFL024ZTRPBF IRFL024ZTRPBF Infineon Technologies irfl024zpbf.pdf?fileId=5546d462533600a401535627dcd91fb2 Description: MOSFET N-CH 55V 5.1A SOT223
Packaging: Cut Tape (CT)
Package / Case: TO-261-4, TO-261AA
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 5.1A (Ta)
Rds On (Max) @ Id, Vgs: 57.5mOhm @ 3.1A, 10V
Power Dissipation (Max): 1W (Ta)
Vgs(th) (Max) @ Id: 4V @ 250µA
Supplier Device Package: SOT-223
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 55 V
Gate Charge (Qg) (Max) @ Vgs: 14 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 340 pF @ 25 V
Voltage Coupled to Gate Charge (Qg) (Max) @ Vgs: 10
Voltage Coupled to Input Capacitance (Ciss) (Max) @ Vds: 25
на замовлення 58251 шт:
термін постачання 21-31 дні (днів)
5+75.89 грн
10+45.58 грн
100+29.83 грн
500+21.63 грн
1000+19.58 грн
Мінімальне замовлення: 5
В кошику  од. на суму  грн.
IRFL4315TRPBF IRFL4315TRPBF Infineon Technologies irfl4315pbf.pdf?fileId=5546d462533600a4015356280dbc1fbe Description: MOSFET N-CH 150V 2.6A SOT223
Packaging: Cut Tape (CT)
Package / Case: TO-261-4, TO-261AA
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 2.6A (Ta)
Rds On (Max) @ Id, Vgs: 185mOhm @ 1.6A, 10V
Power Dissipation (Max): 2.8W (Ta)
Vgs(th) (Max) @ Id: 5V @ 250µA
Supplier Device Package: SOT-223
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±30V
Drain to Source Voltage (Vdss): 150 V
Gate Charge (Qg) (Max) @ Vgs: 19 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 420 pF @ 25 V
на замовлення 4811 шт:
термін постачання 21-31 дні (днів)
5+75.10 грн
10+45.58 грн
100+29.92 грн
500+21.76 грн
1000+19.73 грн
Мінімальне замовлення: 5
В кошику  од. на суму  грн.
IRFR24N15DTRPBF IRFR24N15DTRPBF Infineon Technologies irfr24n15dpbf.pdf?fileId=5546d462533600a40153562dc1162081 Description: MOSFET N-CH 150V 24A DPAK
Packaging: Cut Tape (CT)
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 24A (Tc)
Rds On (Max) @ Id, Vgs: 95mOhm @ 14A, 10V
Power Dissipation (Max): 140W (Tc)
Vgs(th) (Max) @ Id: 5V @ 250µA
Supplier Device Package: TO-252AA (DPAK)
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±30V
Drain to Source Voltage (Vdss): 150 V
Gate Charge (Qg) (Max) @ Vgs: 45 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 890 pF @ 25 V
на замовлення 7858 шт:
термін постачання 21-31 дні (днів)
3+128.30 грн
10+78.80 грн
100+53.10 грн
500+39.52 грн
1000+36.80 грн
Мінімальне замовлення: 3
В кошику  од. на суму  грн.
IRFR3411TRPBF IRFR3411TRPBF Infineon Technologies irfr3411pbf.pdf?fileId=5546d462533600a401535631077c2093 Description: MOSFET N-CH 100V 32A DPAK
Packaging: Cut Tape (CT)
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 32A (Tc)
Rds On (Max) @ Id, Vgs: 44mOhm @ 16A, 10V
Power Dissipation (Max): 130W (Tc)
Vgs(th) (Max) @ Id: 4V @ 250µA
Supplier Device Package: TO-252AA (DPAK)
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 100 V
Gate Charge (Qg) (Max) @ Vgs: 71 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 1960 pF @ 25 V
на замовлення 2624 шт:
термін постачання 21-31 дні (днів)
3+121.26 грн
10+74.36 грн
100+50.00 грн
500+37.13 грн
1000+34.14 грн
Мінімальне замовлення: 3
В кошику  од. на суму  грн.
IRFR3505TRPBF IRFR3505TRPBF Infineon Technologies irfr3505pbf.pdf?fileId=5546d462533600a4015356312d2d20a0 Description: MOSFET N-CH 55V 30A DPAK
Packaging: Cut Tape (CT)
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 30A (Tc)
Rds On (Max) @ Id, Vgs: 13mOhm @ 30A, 10V
Power Dissipation (Max): 140W (Tc)
Vgs(th) (Max) @ Id: 4V @ 250µA
Supplier Device Package: TO-252AA (DPAK)
Part Status: Obsolete
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 55 V
Gate Charge (Qg) (Max) @ Vgs: 93 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 2030 pF @ 25 V
товару немає в наявності
В кошику  од. на суму  грн.
IRFR3710ZTRPBF IRFR3710ZTRPBF Infineon Technologies irfr3710zpbf.pdf?fileId=5546d462533600a401535631b29d20cb Description: MOSFET N-CH 100V 42A DPAK
Packaging: Cut Tape (CT)
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 42A (Tc)
Rds On (Max) @ Id, Vgs: 18mOhm @ 33A, 10V
Power Dissipation (Max): 140W (Tc)
Vgs(th) (Max) @ Id: 4V @ 250µA
Supplier Device Package: TO-252AA (DPAK)
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 100 V
Gate Charge (Qg) (Max) @ Vgs: 100 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 2930 pF @ 25 V
Voltage Coupled to Gate Charge (Qg) (Max) @ Vgs: 10
Voltage Coupled to Input Capacitance (Ciss) (Max) @ Vds: 25
на замовлення 14000 шт:
термін постачання 21-31 дні (днів)
2+162.73 грн
10+100.50 грн
100+68.40 грн
500+51.29 грн
1000+47.14 грн
Мінімальне замовлення: 2
В кошику  од. на суму  грн.
BGS 12AL7-4 E6327 BGS12AL7-4.pdf?folderId=db3a304314dca3890115176d140c0ca3&fileId=db3a30431b3e89eb011b458d7a767d88
BGS 12AL7-4 E6327
Виробник: Infineon Technologies
Description: IC SW SPDT 30MHZ - 3GHZ TSLP7-4
товару немає в наявності
В кошику  од. на суму  грн.
BFP740H6327XTSA1 Infineon-BFP740-DS-v02_00-EN.pdf?fileId=5546d46265f064ff0166389680a24ea4
BFP740H6327XTSA1
Виробник: Infineon Technologies
Description: RF TRANS NPN 4.7V 42GHZ SOT-343
Packaging: Tape & Reel (TR)
Package / Case: SC-82A, SOT-343
Mounting Type: Surface Mount
Transistor Type: NPN
Operating Temperature: 150°C (TJ)
Gain: 27dB
Power - Max: 160mW
Current - Collector (Ic) (Max): 30mA
Voltage - Collector Emitter Breakdown (Max): 4.7V
DC Current Gain (hFE) (Min) @ Ic, Vce: 160 @ 25mA, 3V
Frequency - Transition: 42GHz
Noise Figure (dB Typ @ f): 0.5dB ~ 0.85dB @ 1.8GHz ~ 6GHz
Supplier Device Package: PG-SOT343-4-2
Part Status: Active
товару немає в наявності
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ILD4001E6327HTSA1 ILD4001.pdf
ILD4001E6327HTSA1
Виробник: Infineon Technologies
Description: IC LED DRIVER CTRLR PWM SC74
Packaging: Tape & Reel (TR)
Package / Case: SC-74, SOT-457
Mounting Type: Surface Mount
Number of Outputs: 1
Frequency: 500kHz
Type: DC DC Controller
Operating Temperature: -40°C ~ 150°C (TJ)
Applications: Lighting
Internal Switch(s): No
Topology: Step-Down (Buck)
Supplier Device Package: SC-74
Dimming: Analog, PWM
Voltage - Supply (Min): 4.5V
Voltage - Supply (Max): 40V
Part Status: Obsolete
товару немає в наявності
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ESD5V3L1U02LRHE6327XTSA1 ESD5V3L1U-02LRH.pdf
ESD5V3L1U02LRHE6327XTSA1
Виробник: Infineon Technologies
Description: TVS DIODE 5.3VWM 10VC PGTSLP217
Packaging: Tape & Reel (TR)
Package / Case: SOD-882
Mounting Type: Surface Mount
Type: Zener
Operating Temperature: -55°C ~ 125°C (TJ)
Applications: General Purpose
Capacitance @ Frequency: 1pF @ 1MHz
Current - Peak Pulse (10/1000µs): 6A (8/20µs)
Voltage - Reverse Standoff (Typ): 5.3V (Max)
Supplier Device Package: PG-TSLP-2-17
Unidirectional Channels: 1
Voltage - Breakdown (Min): 6V
Voltage - Clamping (Max) @ Ipp: 10V (Typ)
Power Line Protection: No
товару немає в наявності
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ILD4035E6327HTSA1 ILD4035.pdf
ILD4035E6327HTSA1
Виробник: Infineon Technologies
Description: IC LED DRVR RGLTR PWM 350MA SC74
Packaging: Tape & Reel (TR)
Package / Case: SC-74, SOT-457
Mounting Type: Surface Mount
Number of Outputs: 1
Frequency: 120kHz
Type: DC DC Regulator
Applications: Lighting
Current - Output / Channel: 350mA
Internal Switch(s): Yes
Topology: Step-Down (Buck)
Supplier Device Package: SC-74
Dimming: Analog, PWM
Voltage - Supply (Min): 4.5V
Voltage - Supply (Max): 40V
товару немає в наявності
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ILD4120E6327XUMA1 ILD4120.pdf
ILD4120E6327XUMA1
Виробник: Infineon Technologies
Description: IC LED DRVR RGLTR PWM 1.2A 8DSO
Packaging: Tape & Reel (TR)
Package / Case: 8-SOIC (0.154", 3.90mm Width)
Mounting Type: Surface Mount
Number of Outputs: 1
Frequency: 500kHz
Type: DC DC Regulator
Operating Temperature: -40°C ~ 150°C (TJ)
Applications: Lighting
Current - Output / Channel: 1.2A
Internal Switch(s): Yes
Topology: Step-Down (Buck)
Supplier Device Package: PG-DSO-8
Dimming: Analog, PWM
Voltage - Supply (Min): 4.5V
Voltage - Supply (Max): 40V
Part Status: Obsolete
товару немає в наявності
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ILD4120E6327XUMA1 ILD4120.pdf
ILD4120E6327XUMA1
Виробник: Infineon Technologies
Description: IC LED DRVR RGLTR PWM 1.2A 8DSO
Packaging: Cut Tape (CT)
Package / Case: 8-SOIC (0.154", 3.90mm Width)
Mounting Type: Surface Mount
Number of Outputs: 1
Frequency: 500kHz
Type: DC DC Regulator
Operating Temperature: -40°C ~ 150°C (TJ)
Applications: Lighting
Current - Output / Channel: 1.2A
Internal Switch(s): Yes
Topology: Step-Down (Buck)
Supplier Device Package: PG-DSO-8
Dimming: Analog, PWM
Voltage - Supply (Min): 4.5V
Voltage - Supply (Max): 40V
Part Status: Obsolete
товару немає в наявності
В кошику  од. на суму  грн.
ILD4035E6327HTSA1 ILD4035.pdf
ILD4035E6327HTSA1
Виробник: Infineon Technologies
Description: IC LED DRVR RGLTR PWM 350MA SC74
Packaging: Cut Tape (CT)
Package / Case: SC-74, SOT-457
Mounting Type: Surface Mount
Number of Outputs: 1
Frequency: 120kHz
Type: DC DC Regulator
Applications: Lighting
Current - Output / Channel: 350mA
Internal Switch(s): Yes
Topology: Step-Down (Buck)
Supplier Device Package: SC-74
Dimming: Analog, PWM
Voltage - Supply (Min): 4.5V
Voltage - Supply (Max): 40V
товару немає в наявності
В кошику  од. на суму  грн.
ILD4001E6327HTSA1 ILD4001.pdf
ILD4001E6327HTSA1
Виробник: Infineon Technologies
Description: IC LED DRIVER CTRLR PWM SC74
Packaging: Cut Tape (CT)
Package / Case: SC-74, SOT-457
Mounting Type: Surface Mount
Number of Outputs: 1
Frequency: 500kHz
Type: DC DC Controller
Operating Temperature: -40°C ~ 150°C (TJ)
Applications: Lighting
Internal Switch(s): No
Topology: Step-Down (Buck)
Supplier Device Package: SC-74
Dimming: Analog, PWM
Voltage - Supply (Min): 4.5V
Voltage - Supply (Max): 40V
Part Status: Obsolete
товару немає в наявності
В кошику  од. на суму  грн.
ESD5V3L1U-02LRH E6327 esd5v3l1u-02lrh.pdf?folderId=db3a30431f848401011fcbf2ab4c04c4&fileId=db3a3043284aacd8012895a71c230078
ESD5V3L1U-02LRH E6327
Виробник: Infineon Technologies
Description: TVS DIODE 5.3VWM 10VC TSLP2-17
товару немає в наявності
В кошику  од. на суму  грн.
ESD5V3L1U-02LRH E6327 esd5v3l1u-02lrh.pdf?folderId=db3a30431f848401011fcbf2ab4c04c4&fileId=db3a3043284aacd8012895a71c230078
ESD5V3L1U-02LRH E6327
Виробник: Infineon Technologies
Description: TVS DIODE 5.3VWM 10VC TSLP2-17
товару немає в наявності
В кошику  од. на суму  грн.
BGS 12AL7-4 E6327 BGS12AL7-4.pdf?folderId=db3a304314dca3890115176d140c0ca3&fileId=db3a30431b3e89eb011b458d7a767d88
BGS 12AL7-4 E6327
Виробник: Infineon Technologies
Description: IC SW SPDT 30MHZ - 3GHZ TSLP7-4
на замовлення 6656 шт:
термін постачання 21-31 дні (днів)
В кошику  од. на суму  грн.
BGS 12AL7-4 E6327 BGS12AL7-4.pdf?folderId=db3a304314dca3890115176d140c0ca3&fileId=db3a30431b3e89eb011b458d7a767d88
BGS 12AL7-4 E6327
Виробник: Infineon Technologies
Description: IC SW SPDT 30MHZ - 3GHZ TSLP7-4
на замовлення 6656 шт:
термін постачання 21-31 дні (днів)
В кошику  од. на суму  грн.
BFP740H6327XTSA1 Infineon-BFP740-DS-v02_00-EN.pdf?fileId=5546d46265f064ff0166389680a24ea4
BFP740H6327XTSA1
Виробник: Infineon Technologies
Description: RF TRANS NPN 4.7V 42GHZ SOT-343
Packaging: Cut Tape (CT)
Package / Case: SC-82A, SOT-343
Mounting Type: Surface Mount
Transistor Type: NPN
Operating Temperature: 150°C (TJ)
Gain: 27dB
Power - Max: 160mW
Current - Collector (Ic) (Max): 30mA
Voltage - Collector Emitter Breakdown (Max): 4.7V
DC Current Gain (hFE) (Min) @ Ic, Vce: 160 @ 25mA, 3V
Frequency - Transition: 42GHz
Noise Figure (dB Typ @ f): 0.5dB ~ 0.85dB @ 1.8GHz ~ 6GHz
Supplier Device Package: PG-SOT343-4-2
Part Status: Active
на замовлення 2115 шт:
термін постачання 21-31 дні (днів)
Кількість Ціна
10+33.64 грн
14+22.83 грн
25+20.37 грн
100+16.61 грн
250+15.42 грн
500+14.71 грн
1000+13.88 грн
Мінімальне замовлення: 10
В кошику  од. на суму  грн.
IR3084AMTRPBF IR3084A.pdf
IR3084AMTRPBF
Виробник: Infineon Technologies
Description: IC CTLR XPHASE 28-MLPQ
Packaging: Cut Tape (CT)
Package / Case: 28-VFQFN Exposed Pad
Mounting Type: Surface Mount
Operating Temperature: 0°C ~ 100°C
Voltage - Supply: 9.5V ~ 16V
Applications: Processor
Current - Supply: 14mA
Supplier Device Package: 28-MLPQ (5x5)
на замовлення 2259 шт:
термін постачання 21-31 дні (днів)
Кількість Ціна
2+185.41 грн
10+160.77 грн
25+155.13 грн
100+141.36 грн
250+138.20 грн
500+137.15 грн
1000+132.82 грн
Мінімальне замовлення: 2
В кошику  од. на суму  грн.
IR3086AMTRPBF IR3086APbF.pdf
IR3086AMTRPBF
Виробник: Infineon Technologies
Description: IC CTLR XPHASE 28-MLPQ
Packaging: Cut Tape (CT)
Package / Case: 20-VFQFN Exposed Pad
Mounting Type: Surface Mount
Operating Temperature: 0°C ~ 125°C
Voltage - Supply: 8.4V ~ 14V
Applications: Processor
Current - Supply: 10mA
Supplier Device Package: 20-MLPQ (4x4)
на замовлення 2770 шт:
термін постачання 21-31 дні (днів)
Кількість Ціна
3+121.26 грн
10+99.97 грн
25+95.71 грн
100+85.37 грн
250+83.22 грн
500+81.91 грн
1000+79.50 грн
Мінімальне замовлення: 3
В кошику  од. на суму  грн.
IR3621MTRPBF IR3621(PbF).pdf
IR3621MTRPBF
Виробник: Infineon Technologies
Description: IC REG CTRLR BUCK 32MLPQ
товару немає в наявності
В кошику  од. на суму  грн.
IRF1407STRLPBF infineon-irf1407spbf-ds-en.pdf
IRF1407STRLPBF
Виробник: Infineon Technologies
Description: MOSFET N-CH 75V 100A D2PAK
Packaging: Cut Tape (CT)
Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 100A (Tc)
Rds On (Max) @ Id, Vgs: 7.8mOhm @ 78A, 10V
Power Dissipation (Max): 3.8W (Ta), 200W (Tc)
Vgs(th) (Max) @ Id: 4V @ 250µA
Supplier Device Package: D2PAK
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 75 V
Gate Charge (Qg) (Max) @ Vgs: 250 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 5600 pF @ 25 V
на замовлення 3228 шт:
термін постачання 21-31 дні (днів)
Кількість Ціна
2+185.41 грн
10+115.34 грн
100+79.34 грн
Мінімальне замовлення: 2
В кошику  од. на суму  грн.
IRF2804STRL7PP IRF2804S-7P.pdf
IRF2804STRL7PP
Виробник: Infineon Technologies
Description: MOSFET N-CH 40V 160A D2PAK
Packaging: Cut Tape (CT)
Package / Case: TO-263-7, D2PAK (6 Leads + Tab), TO-263CB
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 160A (Tc)
Rds On (Max) @ Id, Vgs: 1.6mOhm @ 160A, 10V
Power Dissipation (Max): 330W (Tc)
Vgs(th) (Max) @ Id: 4V @ 250µA
Supplier Device Package: D2PAK (7-Lead)
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 40 V
Gate Charge (Qg) (Max) @ Vgs: 260 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 6930 pF @ 25 V
товару немає в наявності
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IRF2804STRLPBF irf2804pbf.pdf?fileId=5546d462533600a4015355de76f818e3
IRF2804STRLPBF
Виробник: Infineon Technologies
Description: MOSFET N-CH 40V 75A D2PAK
Packaging: Cut Tape (CT)
Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 75A (Tc)
Rds On (Max) @ Id, Vgs: 2mOhm @ 75A, 10V
Power Dissipation (Max): 300W (Tc)
Vgs(th) (Max) @ Id: 4V @ 250µA
Supplier Device Package: D2PAK
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 40 V
Gate Charge (Qg) (Max) @ Vgs: 240 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 6450 pF @ 25 V
на замовлення 1185 шт:
термін постачання 21-31 дні (днів)
Кількість Ціна
2+241.74 грн
10+151.95 грн
100+105.76 грн
Мінімальне замовлення: 2
В кошику  од. на суму  грн.
IRF2805STRLPBF irf2805spbf.pdf?fileId=5546d462533600a4015355de9aad18ed
IRF2805STRLPBF
Виробник: Infineon Technologies
Description: MOSFET N-CH 55V 135A D2PAK
Packaging: Cut Tape (CT)
Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 135A (Tc)
Rds On (Max) @ Id, Vgs: 4.7mOhm @ 104A, 10V
Power Dissipation (Max): 200W (Tc)
Vgs(th) (Max) @ Id: 4V @ 250µA
Supplier Device Package: D2PAK
Part Status: Not For New Designs
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 55 V
Gate Charge (Qg) (Max) @ Vgs: 230 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 5110 pF @ 25 V
товару немає в наявності
В кошику  од. на суму  грн.
IRF2807ZSTRLPBF irf2807zpbf.pdf?fileId=5546d462533600a4015355debf4518f9
IRF2807ZSTRLPBF
Виробник: Infineon Technologies
Description: MOSFET N-CH 75V 75A D2PAK
Packaging: Cut Tape (CT)
Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 75A (Tc)
Rds On (Max) @ Id, Vgs: 9.4mOhm @ 53A, 10V
Power Dissipation (Max): 170W (Tc)
Vgs(th) (Max) @ Id: 4V @ 250µA
Supplier Device Package: D2PAK
Part Status: Not For New Designs
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 75 V
Gate Charge (Qg) (Max) @ Vgs: 110 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 3270 pF @ 25 V
товару немає в наявності
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IRF3805STRL-7PP IRSDS18836-1.pdf?t.download=true&u=5oefqw
IRF3805STRL-7PP
Виробник: Infineon Technologies
Description: MOSFET N-CH 55V 160A D2PAK
Packaging: Cut Tape (CT)
Package / Case: TO-263-7, D2PAK (6 Leads + Tab), TO-263CB
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 160A (Tc)
Rds On (Max) @ Id, Vgs: 2.6mOhm @ 140A, 10V
Power Dissipation (Max): 300W (Tc)
Vgs(th) (Max) @ Id: 4V @ 250µA
Supplier Device Package: D2PAK (7-Lead)
Part Status: Not For New Designs
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 55 V
Gate Charge (Qg) (Max) @ Vgs: 200 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 7820 pF @ 25 V
товару немає в наявності
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IRF3808STRLPBF irf3808spbf.pdf?fileId=5546d462533600a4015364c3bcef29bc
IRF3808STRLPBF
Виробник: Infineon Technologies
Description: MOSFET N-CH 75V 106A D2PAK
Packaging: Cut Tape (CT)
Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 106A (Tc)
Rds On (Max) @ Id, Vgs: 7mOhm @ 82A, 10V
Power Dissipation (Max): 200W (Tc)
Vgs(th) (Max) @ Id: 4V @ 250µA
Supplier Device Package: D2PAK
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 75 V
Gate Charge (Qg) (Max) @ Vgs: 220 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 5310 pF @ 25 V
Voltage Coupled to Gate Charge (Qg) (Max) @ Vgs: 10
Voltage Coupled to Input Capacitance (Ciss) (Max) @ Vds: 25
на замовлення 1184 шт:
термін постачання 21-31 дні (днів)
Кількість Ціна
2+283.99 грн
10+179.75 грн
100+126.30 грн
Мінімальне замовлення: 2
В кошику  од. на суму  грн.
IRF4905STRLPBF description irf4905spbf.pdf?fileId=5546d462533600a4015355e331c41980
IRF4905STRLPBF
Виробник: Infineon Technologies
Description: MOSFET P-CH 55V 42A D2PAK
Packaging: Cut Tape (CT)
Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: P-Channel
Current - Continuous Drain (Id) @ 25°C: 42A (Tc)
Rds On (Max) @ Id, Vgs: 20mOhm @ 42A, 10V
Power Dissipation (Max): 170W (Tc)
Vgs(th) (Max) @ Id: 4V @ 250µA
Supplier Device Package: D2PAK
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 55 V
Gate Charge (Qg) (Max) @ Vgs: 180 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 3500 pF @ 25 V
Voltage Coupled to Gate Charge (Qg) (Max) @ Vgs: 10
Voltage Coupled to Input Capacitance (Ciss) (Max) @ Vds: 25
на замовлення 16611 шт:
термін постачання 21-31 дні (днів)
Кількість Ціна
2+245.65 грн
10+154.66 грн
100+107.80 грн
Мінімальне замовлення: 2
В кошику  од. на суму  грн.
IRF5210STRLPBF irf5210spbf.pdf?fileId=5546d462533600a4015355e35f77198e
IRF5210STRLPBF
Виробник: Infineon Technologies
Description: MOSFET P-CH 100V 38A D2PAK
Packaging: Cut Tape (CT)
Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: P-Channel
Current - Continuous Drain (Id) @ 25°C: 38A (Tc)
Rds On (Max) @ Id, Vgs: 60mOhm @ 38A, 10V
Power Dissipation (Max): 3.1W (Ta), 170W (Tc)
Vgs(th) (Max) @ Id: 4V @ 250µA
Supplier Device Package: D2PAK
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 100 V
Gate Charge (Qg) (Max) @ Vgs: 230 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 2780 pF @ 25 V
на замовлення 5495 шт:
термін постачання 21-31 дні (днів)
Кількість Ціна
2+281.64 грн
10+178.40 грн
100+125.31 грн
Мінімальне замовлення: 2
В кошику  од. на суму  грн.
IRF5801TRPBF irf5801pbf.pdf?fileId=5546d462533600a4015355e3be0919ac
IRF5801TRPBF
Виробник: Infineon Technologies
Description: MOSFET N-CH 200V 600MA MICRO6
Packaging: Cut Tape (CT)
Package / Case: SOT-23-6 Thin, TSOT-23-6
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 600mA (Ta)
Rds On (Max) @ Id, Vgs: 2.2Ohm @ 360mA, 10V
Power Dissipation (Max): 2W (Ta)
Vgs(th) (Max) @ Id: 5.5V @ 250µA
Supplier Device Package: Micro6™(TSOP-6)
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±30V
Drain to Source Voltage (Vdss): 200 V
Gate Charge (Qg) (Max) @ Vgs: 3.9 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 88 pF @ 25 V
на замовлення 3865 шт:
термін постачання 21-31 дні (днів)
Кількість Ціна
7+46.94 грн
11+27.95 грн
100+17.94 грн
500+12.79 грн
1000+11.48 грн
Мінімальне замовлення: 7
В кошику  од. на суму  грн.
IRF5802TRPBF irf5802pbf.pdf?fileId=5546d462533600a4015355e3d4d319b2
IRF5802TRPBF
Виробник: Infineon Technologies
Description: MOSFET N-CH 150V 900MA MICRO6
Packaging: Cut Tape (CT)
Package / Case: SOT-23-6 Thin, TSOT-23-6
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 900mA (Ta)
Rds On (Max) @ Id, Vgs: 1.2Ohm @ 540mA, 10V
Power Dissipation (Max): 2W (Ta)
Vgs(th) (Max) @ Id: 5.5V @ 250µA
Supplier Device Package: Micro6™(TSOP-6)
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±30V
Drain to Source Voltage (Vdss): 150 V
Gate Charge (Qg) (Max) @ Vgs: 6.8 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 88 pF @ 25 V
на замовлення 6159 шт:
термін постачання 21-31 дні (днів)
Кількість Ціна
8+43.03 грн
12+25.84 грн
100+16.53 грн
500+11.75 грн
1000+10.53 грн
Мінімальне замовлення: 8
В кошику  од. на суму  грн.
IRF5803TRPBF irf5803pbf.pdf?fileId=5546d462533600a4015355e3e4e019b6
IRF5803TRPBF
Виробник: Infineon Technologies
Description: MOSFET P-CH 40V 3.4A MICRO6
Packaging: Cut Tape (CT)
Package / Case: SOT-23-6 Thin, TSOT-23-6
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: P-Channel
Current - Continuous Drain (Id) @ 25°C: 3.4A (Ta)
Rds On (Max) @ Id, Vgs: 112mOhm @ 3.4A, 10V
Power Dissipation (Max): 2W (Ta)
Vgs(th) (Max) @ Id: 3V @ 250µA
Supplier Device Package: Micro6™(TSOP-6)
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 40 V
Gate Charge (Qg) (Max) @ Vgs: 37 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 1110 pF @ 25 V
товару немає в наявності
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IRF5852TRPBF IR_PartNumberingSystem.pdf
IRF5852TRPBF
Виробник: Infineon Technologies
Description: MOSFET 2N-CH 20V 2.7A 6TSOP
Packaging: Cut Tape (CT)
Package / Case: SOT-23-6 Thin, TSOT-23-6
Mounting Type: Surface Mount
Configuration: 2 N-Channel (Dual)
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
Power - Max: 960mW
Drain to Source Voltage (Vdss): 20V
Current - Continuous Drain (Id) @ 25°C: 2.7A
Input Capacitance (Ciss) (Max) @ Vds: 400pF @ 15V
Rds On (Max) @ Id, Vgs: 90mOhm @ 2.7A, 4.5V
Gate Charge (Qg) (Max) @ Vgs: 6nC @ 4.5V
FET Feature: Logic Level Gate
Vgs(th) (Max) @ Id: 1.25V @ 250µA
Supplier Device Package: 6-TSOP
Part Status: Obsolete
товару немає в наявності
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IRF6215STRLPBF irf6215spbf.pdf?fileId=5546d462533600a4015355e454d819d2
IRF6215STRLPBF
Виробник: Infineon Technologies
Description: MOSFET P-CH 150V 13A D2PAK
Packaging: Cut Tape (CT)
Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: P-Channel
Current - Continuous Drain (Id) @ 25°C: 13A (Tc)
Rds On (Max) @ Id, Vgs: 290mOhm @ 6.6A, 10V
Power Dissipation (Max): 3.8W (Ta), 110W (Tc)
Vgs(th) (Max) @ Id: 4V @ 250µA
Supplier Device Package: D2PAK
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 150 V
Gate Charge (Qg) (Max) @ Vgs: 66 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 860 pF @ 25 V
товару немає в наявності
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IRF6216TRPBF irf6216pbf.pdf?fileId=5546d462533600a4015355e4623c19d7
IRF6216TRPBF
Виробник: Infineon Technologies
Description: MOSFET P-CH 150V 2.2A 8SO
Packaging: Cut Tape (CT)
Package / Case: 8-SOIC (0.154", 3.90mm Width)
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: P-Channel
Current - Continuous Drain (Id) @ 25°C: 2.2A (Ta)
Rds On (Max) @ Id, Vgs: 240mOhm @ 1.3A, 10V
Power Dissipation (Max): 2.5W (Ta)
Vgs(th) (Max) @ Id: 5V @ 250µA
Supplier Device Package: 8-SO
Part Status: Obsolete
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 150 V
Gate Charge (Qg) (Max) @ Vgs: 49 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 1280 pF @ 25 V
товару немає в наявності
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IRF6217TRPBF irf6217pbf.pdf?fileId=5546d462533600a4015355e472de19db
IRF6217TRPBF
Виробник: Infineon Technologies
Description: MOSFET P-CH 150V 700MA 8SO
товару немає в наявності
В кошику  од. на суму  грн.
IRF7240TRPBF irf7240pbf.pdf?fileId=5546d462533600a4015355f19e0d1af2
IRF7240TRPBF
Виробник: Infineon Technologies
Description: MOSFET P-CH 40V 10.5A 8SO
Packaging: Cut Tape (CT)
Package / Case: 8-SOIC (0.154", 3.90mm Width)
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: P-Channel
Current - Continuous Drain (Id) @ 25°C: 10.5A (Ta)
Rds On (Max) @ Id, Vgs: 15mOhm @ 10.5A, 10V
Power Dissipation (Max): 2.5W (Ta)
Vgs(th) (Max) @ Id: 3V @ 250µA
Supplier Device Package: 8-SO
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 40 V
Gate Charge (Qg) (Max) @ Vgs: 110 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 9250 pF @ 25 V
на замовлення 15571 шт:
термін постачання 21-31 дні (днів)
Кількість Ціна
3+122.83 грн
10+75.19 грн
100+50.54 грн
500+37.51 грн
1000+34.40 грн
Мінімальне замовлення: 3
В кошику  од. на суму  грн.
IRF7380TRPBF irf7380pbf.pdf?fileId=5546d462533600a4015355f9da901b89
IRF7380TRPBF
Виробник: Infineon Technologies
Description: MOSFET 2N-CH 80V 3.6A 8SO
Packaging: Cut Tape (CT)
Package / Case: 8-SOIC (0.154", 3.90mm Width)
Mounting Type: Surface Mount
Configuration: 2 N-Channel (Dual)
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
Power - Max: 2W
Drain to Source Voltage (Vdss): 80V
Current - Continuous Drain (Id) @ 25°C: 3.6A
Input Capacitance (Ciss) (Max) @ Vds: 660pF @ 25V
Rds On (Max) @ Id, Vgs: 73mOhm @ 2.2A, 10V
Gate Charge (Qg) (Max) @ Vgs: 23nC @ 10V
FET Feature: Logic Level Gate
Vgs(th) (Max) @ Id: 4V @ 250µA
Supplier Device Package: 8-SO
Part Status: Active
на замовлення 297 шт:
термін постачання 21-31 дні (днів)
Кількість Ціна
5+70.41 грн
10+49.42 грн
100+37.85 грн
Мінімальне замовлення: 5
В кошику  од. на суму  грн.
IRF7410TRPBF irf7410pbf.pdf?fileId=5546d462533600a4015355fa75d71bb0
IRF7410TRPBF
Виробник: Infineon Technologies
Description: MOSFET P-CH 12V 16A 8SO
Packaging: Cut Tape (CT)
Package / Case: 8-SOIC (0.154", 3.90mm Width)
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: P-Channel
Current - Continuous Drain (Id) @ 25°C: 16A (Ta)
Rds On (Max) @ Id, Vgs: 7mOhm @ 16A, 4.5V
Power Dissipation (Max): 2.5W (Ta)
Vgs(th) (Max) @ Id: 900mV @ 250µA
Supplier Device Package: 8-SO
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 1.8V, 4.5V
Vgs (Max): ±8V
Drain to Source Voltage (Vdss): 12 V
Gate Charge (Qg) (Max) @ Vgs: 91 nC @ 4.5 V
Input Capacitance (Ciss) (Max) @ Vds: 8676 pF @ 10 V
товару немає в наявності
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IRF7425TRPBF irf7425pbf.pdf?fileId=5546d462533600a4015355fb1c361bdc
IRF7425TRPBF
Виробник: Infineon Technologies
Description: MOSFET P-CH 20V 15A 8SO
Packaging: Cut Tape (CT)
Package / Case: 8-SOIC (0.154", 3.90mm Width)
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: P-Channel
Current - Continuous Drain (Id) @ 25°C: 15A (Ta)
Rds On (Max) @ Id, Vgs: 8.2mOhm @ 15A, 4.5V
Power Dissipation (Max): 2.5W (Ta)
Vgs(th) (Max) @ Id: 1.2V @ 250µA
Supplier Device Package: 8-SO
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 2.5V, 4.5V
Vgs (Max): ±12V
Drain to Source Voltage (Vdss): 20 V
Gate Charge (Qg) (Max) @ Vgs: 130 nC @ 4.5 V
Input Capacitance (Ciss) (Max) @ Vds: 7980 pF @ 15 V
на замовлення 3133 шт:
термін постачання 21-31 дні (днів)
Кількість Ціна
3+114.22 грн
10+69.53 грн
100+46.54 грн
500+34.42 грн
1000+31.45 грн
2000+30.97 грн
Мінімальне замовлення: 3
В кошику  од. на суму  грн.
IRF7467TRPBF IRF7467PBF.pdf
IRF7467TRPBF
Виробник: Infineon Technologies
Description: MOSFET N-CH 30V 11A 8SO
товару немає в наявності
В кошику  од. на суму  грн.
IRF7484TRPBF IRF7484PbF.pdf
IRF7484TRPBF
Виробник: Infineon Technologies
Description: MOSFET N-CH 40V 14A 8SO
Packaging: Cut Tape (CT)
Package / Case: 8-SOIC (0.154", 3.90mm Width)
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 14A (Ta)
Rds On (Max) @ Id, Vgs: 10mOhm @ 14A, 7V
Power Dissipation (Max): 2.5W (Ta)
Vgs(th) (Max) @ Id: 2V @ 250µA
Supplier Device Package: 8-SO
Drive Voltage (Max Rds On, Min Rds On): 7V
Vgs (Max): ±8V
Drain to Source Voltage (Vdss): 40 V
Gate Charge (Qg) (Max) @ Vgs: 100 nC @ 7 V
Input Capacitance (Ciss) (Max) @ Vds: 3520 pF @ 25 V
товару немає в наявності
В кошику  од. на суму  грн.
IRF7490TRPBF irf7490pbf.pdf?fileId=5546d462533600a4015355ffaf0b1c38
IRF7490TRPBF
Виробник: Infineon Technologies
Description: MOSFET N-CH 100V 5.4A 8SO
Packaging: Cut Tape (CT)
Package / Case: 8-SOIC (0.154", 3.90mm Width)
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 5.4A (Ta)
Rds On (Max) @ Id, Vgs: 39mOhm @ 3.2A, 10V
Power Dissipation (Max): 2.5W (Ta)
Vgs(th) (Max) @ Id: 4V @ 250µA
Supplier Device Package: 8-SO
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 100 V
Gate Charge (Qg) (Max) @ Vgs: 56 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 1720 pF @ 25 V
на замовлення 13687 шт:
термін постачання 21-31 дні (днів)
Кількість Ціна
4+97.01 грн
10+58.76 грн
100+38.93 грн
500+28.53 грн
1000+25.95 грн
2000+23.79 грн
Мінімальне замовлення: 4
В кошику  од. на суму  грн.
IRF7492TRPBF IRF7492PbF.pdf
IRF7492TRPBF
Виробник: Infineon Technologies
Description: MOSFET N-CH 200V 3.7A 8SO
Packaging: Cut Tape (CT)
Package / Case: 8-SOIC (0.154", 3.90mm Width)
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 3.7A (Ta)
Rds On (Max) @ Id, Vgs: 79mOhm @ 2.2A, 10V
Power Dissipation (Max): 2.5W (Ta)
Vgs(th) (Max) @ Id: 2.5V @ 250µA
Supplier Device Package: 8-SO
Part Status: Obsolete
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 200 V
Gate Charge (Qg) (Max) @ Vgs: 59 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 1820 pF @ 25 V
товару немає в наявності
В кошику  од. на суму  грн.
IRF7507TRPBF irf7507.pdf
IRF7507TRPBF
Виробник: Infineon Technologies
Description: MOSFET N/P-CH 20V 2.4A MICRO8
Packaging: Cut Tape (CT)
Package / Case: 8-TSSOP, 8-MSOP (0.118", 3.00mm Width)
Mounting Type: Surface Mount
Configuration: N and P-Channel
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
Power - Max: 1.25W
Drain to Source Voltage (Vdss): 20V
Current - Continuous Drain (Id) @ 25°C: 2.4A, 1.7A
Input Capacitance (Ciss) (Max) @ Vds: 260pF @ 15V
Rds On (Max) @ Id, Vgs: 140mOhm @ 1.7A, 4.5V
Gate Charge (Qg) (Max) @ Vgs: 8nC @ 4.5V
FET Feature: Logic Level Gate
Vgs(th) (Max) @ Id: 700mV @ 250µA
Supplier Device Package: Micro8™
Part Status: Not For New Designs
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В кошику  од. на суму  грн.
IRF7701TRPBF IRF7701PbF.pdf
IRF7701TRPBF
Виробник: Infineon Technologies
Description: MOSFET P-CH 12V 10A 8TSSOP
товару немає в наявності
В кошику  од. на суму  грн.
IRF7705TRPBF IRF7705PBF.pdf
IRF7705TRPBF
Виробник: Infineon Technologies
Description: MOSFET P-CH 30V 8A 8TSSOP
Packaging: Cut Tape (CT)
Package / Case: 8-TSSOP (0.173", 4.40mm Width)
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: P-Channel
Current - Continuous Drain (Id) @ 25°C: 8A (Tc)
Rds On (Max) @ Id, Vgs: 18mOhm @ 8A, 10V
Power Dissipation (Max): 1.5W (Ta)
Vgs(th) (Max) @ Id: 2.5V @ 250µA
Supplier Device Package: 8-TSSOP
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 30 V
Gate Charge (Qg) (Max) @ Vgs: 88 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 2774 pF @ 25 V
товару немає в наявності
В кошику  од. на суму  грн.
IRF7752TRPBF IRF7752PBF.pdf
IRF7752TRPBF
Виробник: Infineon Technologies
Description: MOSFET 2N-CH 30V 4.6A 8TSSOP
товару немає в наявності
В кошику  од. на суму  грн.
IRF7853TRPBF irf7853pbf.pdf?fileId=5546d462533600a40153560c4d2f1d27
IRF7853TRPBF
Виробник: Infineon Technologies
Description: MOSFET N-CH 100V 8.3A 8SO
Packaging: Cut Tape (CT)
Package / Case: 8-SOIC (0.154", 3.90mm Width)
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 8.3A (Ta)
Rds On (Max) @ Id, Vgs: 18mOhm @ 8.3A, 10V
Power Dissipation (Max): 2.5W (Ta)
Vgs(th) (Max) @ Id: 4.9V @ 100µA
Supplier Device Package: 8-SO
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 100 V
Gate Charge (Qg) (Max) @ Vgs: 39 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 1640 pF @ 25 V
на замовлення 2916 шт:
термін постачання 21-31 дні (днів)
Кількість Ціна
3+123.61 грн
10+75.86 грн
100+51.08 грн
500+37.96 грн
1000+35.07 грн
Мінімальне замовлення: 3
В кошику  од. на суму  грн.
IRF7854TRPBF irf7854pbf.pdf?fileId=5546d462533600a40153560c559a1d29
IRF7854TRPBF
Виробник: Infineon Technologies
Description: MOSFET N-CH 80V 10A 8SO
Packaging: Cut Tape (CT)
Package / Case: 8-SOIC (0.154", 3.90mm Width)
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 10A (Ta)
Rds On (Max) @ Id, Vgs: 13.4mOhm @ 10A, 10V
Power Dissipation (Max): 2.5W (Ta)
Vgs(th) (Max) @ Id: 4.9V @ 100µA
Supplier Device Package: 8-SO
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 80 V
Gate Charge (Qg) (Max) @ Vgs: 41 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 1620 pF @ 25 V
на замовлення 14208 шт:
термін постачання 21-31 дні (днів)
Кількість Ціна
2+159.60 грн
10+98.24 грн
100+66.63 грн
500+49.83 грн
1000+45.74 грн
2000+43.29 грн
Мінімальне замовлення: 2
В кошику  од. на суму  грн.
IRF7855TRPBF irf7855pbf.pdf?fileId=5546d462533600a40153560c60181d2b
IRF7855TRPBF
Виробник: Infineon Technologies
Description: MOSFET N-CH 60V 12A 8SO
Packaging: Cut Tape (CT)
Package / Case: 8-SOIC (0.154", 3.90mm Width)
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 12A (Ta)
Rds On (Max) @ Id, Vgs: 9.4mOhm @ 12A, 10V
Power Dissipation (Max): 2.5W (Ta)
Vgs(th) (Max) @ Id: 4.9V @ 100µA
Supplier Device Package: 8-SO
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 60 V
Gate Charge (Qg) (Max) @ Vgs: 39 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 1560 pF @ 25 V
Voltage Coupled to Gate Charge (Qg) (Max) @ Vgs: 10
Voltage Coupled to Input Capacitance (Ciss) (Max) @ Vds: 25
на замовлення 8296 шт:
термін постачання 21-31 дні (днів)
Кількість Ціна
3+136.13 грн
10+81.89 грн
100+65.17 грн
500+50.44 грн
1000+49.39 грн
Мінімальне замовлення: 3
В кошику  од. на суму  грн.
IRF7904TRPBF irf7904pbf.pdf?fileId=5546d462533600a40153560c7f8c1d33
IRF7904TRPBF
Виробник: Infineon Technologies
Description: MOSFET 2N-CH 30V 7.6A/11A 8SO
Packaging: Cut Tape (CT)
Package / Case: 8-SOIC (0.154", 3.90mm Width)
Mounting Type: Surface Mount
Configuration: 2 N-Channel (Half Bridge)
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
Power - Max: 1.4W, 2W
Drain to Source Voltage (Vdss): 30V
Current - Continuous Drain (Id) @ 25°C: 7.6A, 11A
Input Capacitance (Ciss) (Max) @ Vds: 910pF @ 15V
Rds On (Max) @ Id, Vgs: 16.2mOhm @ 7.6A, 10V
Gate Charge (Qg) (Max) @ Vgs: 11nC @ 4.5V
FET Feature: Logic Level Gate
Vgs(th) (Max) @ Id: 2.25V @ 25µA
Supplier Device Package: 8-SO
Part Status: Not For New Designs
товару немає в наявності
В кошику  од. на суму  грн.
IRF7907TRPBF irf7907pbf.pdf?fileId=5546d462533600a40153560c992e1d39
IRF7907TRPBF
Виробник: Infineon Technologies
Description: MOSFET 2N-CH 30V 9.1A/11A 8SO
Packaging: Cut Tape (CT)
Package / Case: 8-SOIC (0.154", 3.90mm Width)
Mounting Type: Surface Mount
Configuration: 2 N-Channel (Dual)
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
Power - Max: 2W
Drain to Source Voltage (Vdss): 30V
Current - Continuous Drain (Id) @ 25°C: 9.1A, 11A
Input Capacitance (Ciss) (Max) @ Vds: 850pF @ 15V
Rds On (Max) @ Id, Vgs: 16.4mOhm @ 9.1A, 10V
Gate Charge (Qg) (Max) @ Vgs: 10nC @ 4.5V
FET Feature: Logic Level Gate
Vgs(th) (Max) @ Id: 2.35V @ 25µA
Supplier Device Package: 8-SO
Part Status: Active
на замовлення 52959 шт:
термін постачання 21-31 дні (днів)
Кількість Ціна
4+104.05 грн
10+63.06 грн
100+41.90 грн
500+30.80 грн
1000+28.05 грн
2000+25.74 грн
Мінімальне замовлення: 4
В кошику  од. на суму  грн.
IRF8010STRLPBF irf8010spbf.pdf?fileId=5546d462533600a40153560cd69a1d49
IRF8010STRLPBF
Виробник: Infineon Technologies
Description: MOSFET N-CH 100V 80A D2PAK
Packaging: Cut Tape (CT)
Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 80A (Tc)
Rds On (Max) @ Id, Vgs: 15mOhm @ 45A, 10V
Power Dissipation (Max): 260W (Tc)
Vgs(th) (Max) @ Id: 4V @ 250µA
Supplier Device Package: D2PAK
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 100 V
Gate Charge (Qg) (Max) @ Vgs: 120 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 3830 pF @ 25 V
на замовлення 1825 шт:
термін постачання 21-31 дні (днів)
Кількість Ціна
2+232.35 грн
10+145.62 грн
100+101.12 грн
Мінімальне замовлення: 2
В кошику  од. на суму  грн.
IRF9530NSTRLPBF irf9530nspbf.pdf?fileId=5546d462533600a401535611c2011dc3
IRF9530NSTRLPBF
Виробник: Infineon Technologies
Description: MOSFET P-CH 100V 14A D2PAK
Packaging: Cut Tape (CT)
Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: P-Channel
Current - Continuous Drain (Id) @ 25°C: 14A (Tc)
Rds On (Max) @ Id, Vgs: 200mOhm @ 8.4A, 10V
Power Dissipation (Max): 3.8W (Ta), 79W (Tc)
Vgs(th) (Max) @ Id: 4V @ 250µA
Supplier Device Package: D2PAK
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 100 V
Gate Charge (Qg) (Max) @ Vgs: 58 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 760 pF @ 25 V
на замовлення 8828 шт:
термін постачання 21-31 дні (днів)
Кількість Ціна
3+131.43 грн
10+80.76 грн
100+54.32 грн
Мінімальне замовлення: 3
В кошику  од. на суму  грн.
IRF9540NSTRLPBF description irf9540nspbf.pdf?fileId=5546d462533600a401535611d92a1dca
IRF9540NSTRLPBF
Виробник: Infineon Technologies
Description: MOSFET P-CH 100V 23A D2PAK
Packaging: Cut Tape (CT)
Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: P-Channel
Current - Continuous Drain (Id) @ 25°C: 23A (Tc)
Rds On (Max) @ Id, Vgs: 117mOhm @ 14A, 10V
Power Dissipation (Max): 3.1W (Ta), 110W (Tc)
Vgs(th) (Max) @ Id: 4V @ 250µA
Supplier Device Package: D2PAK
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 100 V
Gate Charge (Qg) (Max) @ Vgs: 110 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 1450 pF @ 25 V
Voltage Coupled to Gate Charge (Qg) (Max) @ Vgs: 10
Voltage Coupled to Input Capacitance (Ciss) (Max) @ Vds: 25
на замовлення 16034 шт:
термін постачання 21-31 дні (днів)
Кількість Ціна
2+165.85 грн
10+102.23 грн
100+69.63 грн
Мінімальне замовлення: 2
В кошику  од. на суму  грн.
IRFL024NTRPBF irfl024npbf.pdf?fileId=5546d462533600a401535627cdd51fae
IRFL024NTRPBF
Виробник: Infineon Technologies
Description: MOSFET N-CH 55V 2.8A SOT223
Packaging: Cut Tape (CT)
Package / Case: TO-261-4, TO-261AA
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 2.8A (Ta)
Rds On (Max) @ Id, Vgs: 75mOhm @ 2.8A, 10V
Power Dissipation (Max): 1W (Ta)
Vgs(th) (Max) @ Id: 4V @ 250µA
Supplier Device Package: SOT-223
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 55 V
Gate Charge (Qg) (Max) @ Vgs: 18.3 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 400 pF @ 25 V
на замовлення 6 шт:
термін постачання 21-31 дні (днів)
Кількість Ціна
5+64.93 грн
Мінімальне замовлення: 5
В кошику  од. на суму  грн.
IRFL024ZTRPBF irfl024zpbf.pdf?fileId=5546d462533600a401535627dcd91fb2
IRFL024ZTRPBF
Виробник: Infineon Technologies
Description: MOSFET N-CH 55V 5.1A SOT223
Packaging: Cut Tape (CT)
Package / Case: TO-261-4, TO-261AA
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 5.1A (Ta)
Rds On (Max) @ Id, Vgs: 57.5mOhm @ 3.1A, 10V
Power Dissipation (Max): 1W (Ta)
Vgs(th) (Max) @ Id: 4V @ 250µA
Supplier Device Package: SOT-223
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 55 V
Gate Charge (Qg) (Max) @ Vgs: 14 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 340 pF @ 25 V
Voltage Coupled to Gate Charge (Qg) (Max) @ Vgs: 10
Voltage Coupled to Input Capacitance (Ciss) (Max) @ Vds: 25
на замовлення 58251 шт:
термін постачання 21-31 дні (днів)
Кількість Ціна
5+75.89 грн
10+45.58 грн
100+29.83 грн
500+21.63 грн
1000+19.58 грн
Мінімальне замовлення: 5
В кошику  од. на суму  грн.
IRFL4315TRPBF irfl4315pbf.pdf?fileId=5546d462533600a4015356280dbc1fbe
IRFL4315TRPBF
Виробник: Infineon Technologies
Description: MOSFET N-CH 150V 2.6A SOT223
Packaging: Cut Tape (CT)
Package / Case: TO-261-4, TO-261AA
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 2.6A (Ta)
Rds On (Max) @ Id, Vgs: 185mOhm @ 1.6A, 10V
Power Dissipation (Max): 2.8W (Ta)
Vgs(th) (Max) @ Id: 5V @ 250µA
Supplier Device Package: SOT-223
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±30V
Drain to Source Voltage (Vdss): 150 V
Gate Charge (Qg) (Max) @ Vgs: 19 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 420 pF @ 25 V
на замовлення 4811 шт:
термін постачання 21-31 дні (днів)
Кількість Ціна
5+75.10 грн
10+45.58 грн
100+29.92 грн
500+21.76 грн
1000+19.73 грн
Мінімальне замовлення: 5
В кошику  од. на суму  грн.
IRFR24N15DTRPBF irfr24n15dpbf.pdf?fileId=5546d462533600a40153562dc1162081
IRFR24N15DTRPBF
Виробник: Infineon Technologies
Description: MOSFET N-CH 150V 24A DPAK
Packaging: Cut Tape (CT)
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 24A (Tc)
Rds On (Max) @ Id, Vgs: 95mOhm @ 14A, 10V
Power Dissipation (Max): 140W (Tc)
Vgs(th) (Max) @ Id: 5V @ 250µA
Supplier Device Package: TO-252AA (DPAK)
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±30V
Drain to Source Voltage (Vdss): 150 V
Gate Charge (Qg) (Max) @ Vgs: 45 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 890 pF @ 25 V
на замовлення 7858 шт:
термін постачання 21-31 дні (днів)
Кількість Ціна
3+128.30 грн
10+78.80 грн
100+53.10 грн
500+39.52 грн
1000+36.80 грн
Мінімальне замовлення: 3
В кошику  од. на суму  грн.
IRFR3411TRPBF irfr3411pbf.pdf?fileId=5546d462533600a401535631077c2093
IRFR3411TRPBF
Виробник: Infineon Technologies
Description: MOSFET N-CH 100V 32A DPAK
Packaging: Cut Tape (CT)
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 32A (Tc)
Rds On (Max) @ Id, Vgs: 44mOhm @ 16A, 10V
Power Dissipation (Max): 130W (Tc)
Vgs(th) (Max) @ Id: 4V @ 250µA
Supplier Device Package: TO-252AA (DPAK)
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 100 V
Gate Charge (Qg) (Max) @ Vgs: 71 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 1960 pF @ 25 V
на замовлення 2624 шт:
термін постачання 21-31 дні (днів)
Кількість Ціна
3+121.26 грн
10+74.36 грн
100+50.00 грн
500+37.13 грн
1000+34.14 грн
Мінімальне замовлення: 3
В кошику  од. на суму  грн.
IRFR3505TRPBF irfr3505pbf.pdf?fileId=5546d462533600a4015356312d2d20a0
IRFR3505TRPBF
Виробник: Infineon Technologies
Description: MOSFET N-CH 55V 30A DPAK
Packaging: Cut Tape (CT)
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 30A (Tc)
Rds On (Max) @ Id, Vgs: 13mOhm @ 30A, 10V
Power Dissipation (Max): 140W (Tc)
Vgs(th) (Max) @ Id: 4V @ 250µA
Supplier Device Package: TO-252AA (DPAK)
Part Status: Obsolete
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 55 V
Gate Charge (Qg) (Max) @ Vgs: 93 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 2030 pF @ 25 V
товару немає в наявності
В кошику  од. на суму  грн.
IRFR3710ZTRPBF irfr3710zpbf.pdf?fileId=5546d462533600a401535631b29d20cb
IRFR3710ZTRPBF
Виробник: Infineon Technologies
Description: MOSFET N-CH 100V 42A DPAK
Packaging: Cut Tape (CT)
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 42A (Tc)
Rds On (Max) @ Id, Vgs: 18mOhm @ 33A, 10V
Power Dissipation (Max): 140W (Tc)
Vgs(th) (Max) @ Id: 4V @ 250µA
Supplier Device Package: TO-252AA (DPAK)
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 100 V
Gate Charge (Qg) (Max) @ Vgs: 100 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 2930 pF @ 25 V
Voltage Coupled to Gate Charge (Qg) (Max) @ Vgs: 10
Voltage Coupled to Input Capacitance (Ciss) (Max) @ Vds: 25
на замовлення 14000 шт:
термін постачання 21-31 дні (днів)
Кількість Ціна
2+162.73 грн
10+100.50 грн
100+68.40 грн
500+51.29 грн
1000+47.14 грн
Мінімальне замовлення: 2
В кошику  од. на суму  грн.
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