Продукція > INFINEON TECHNOLOGIES > Всі товари виробника INFINEON TECHNOLOGIES (148389) > Сторінка 2462 з 2474

Обрати Сторінку:   [  << Попередня Сторінка ]  1 247 494 741 988 1235 1482 1729 1976 2223 2457 2458 2459 2460 2461 2462 2463 2464 2465 2466 2467 2470 2474  [ Наступна Сторінка >> ]
Фото Назва Виробник Інформація Доступність
Ціна
BAS3010A03WE6327HTSA1 BAS3010A03WE6327HTSA1 INFINEON TECHNOLOGIES BAS3010A03WE6327HT.pdf Category: SMD Schottky diodes
Description: Diode: Schottky rectifying; SOD323; SMD; 30V; 1A
Type of diode: Schottky rectifying
Case: SOD323
Mounting: SMD
Max. off-state voltage: 30V
Load current: 1A
Semiconductor structure: single diode
Max. forward impulse current: 10A
на замовлення 1515 шт:
термін постачання 21-30 дні (днів)
17+24.70 грн
23+16.67 грн
50+12.38 грн
100+10.86 грн
122+7.34 грн
334+6.96 грн
1000+6.80 грн
Мінімальне замовлення: 17
В кошику  од. на суму  грн.
IPB026N06NATMA1 IPB026N06NATMA1 INFINEON TECHNOLOGIES IPB026N06N-DTE.pdf Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 60V; 100A; 136W; PG-TO263-3
Mounting: SMD
Case: PG-TO263-3
Drain-source voltage: 60V
Drain current: 100A
On-state resistance: 2.6mΩ
Type of transistor: N-MOSFET
Power dissipation: 136W
Polarisation: unipolar
Technology: OptiMOS™
Kind of channel: enhancement
Gate-source voltage: ±20V
товару немає в наявності
В кошику  од. на суму  грн.
BAT1804E6327HTSA1 BAT1804E6327HTSA1 INFINEON TECHNOLOGIES BAT18.pdf Category: Diodes - others
Description: Diode: switching; 35V; 100mA; SOT23; double series; Ufmax: 1.2V
Type of diode: switching
Max. off-state voltage: 35V
Load current: 0.1A
Case: SOT23
Mounting: SMD
Semiconductor structure: double series
Features of semiconductor devices: PIN; RF
Max. forward voltage: 1.2V
Kind of package: reel; tape
товару немає в наявності
В кошику  од. на суму  грн.
BSZ130N03MSGATMA1 BSZ130N03MSGATMA1 INFINEON TECHNOLOGIES BSZ130N03MSG-DTE.pdf Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 30V; 31A; 25W; PG-TSDSON-8
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 30V
Drain current: 31A
Power dissipation: 25W
Case: PG-TSDSON-8
Gate-source voltage: ±20V
On-state resistance: 11.5mΩ
Mounting: SMD
Kind of channel: enhancement
Technology: OptiMOS™ 3
товару немає в наявності
В кошику  од. на суму  грн.
IPD70N10S3L12ATMA1 INFINEON TECHNOLOGIES Infineon-IPD70N10S3L-DS-v01_01-en.pdf?folderId=db3a3043156fd5730115c7d50620107c&fileId=db3a3043183a955501188996d3f9675c&ack=t Category: SMD N channel transistors
Description: Transistor: N-MOSFET; OptiMOS® -T; unipolar; 100V; 48A; Idm: 280A
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 100V
Drain current: 48A
Power dissipation: 125W
Case: PG-TO252-3-11
Gate-source voltage: ±20V
On-state resistance: 11.5mΩ
Mounting: SMD
Kind of channel: enhancement
Technology: OptiMOS® -T
Pulsed drain current: 280A
товару немає в наявності
В кошику  од. на суму  грн.
2ED21091S06FXUMA1 2ED21091S06FXUMA1 INFINEON TECHNOLOGIES Infineon-2ED21091S06F-DataSheet-v02_10-EN.pdf?fileId=5546d4626cb27db2016cb8d7765529ff Category: MOSFET/IGBT drivers
Description: IC: driver; IGBT half-bridge,MOSFET half-bridge; PG-DSO-8; Ch: 2
Type of integrated circuit: driver
Topology: IGBT half-bridge; MOSFET half-bridge
Kind of integrated circuit: gate driver; high-/low-side
Case: PG-DSO-8
Output current: -0.7...0.29A
Number of channels: 2
Integrated circuit features: integrated bootstrap functionality
Mounting: SMD
Kind of package: reel; tape
Supply voltage: 10...20V
Voltage class: 650V
Protection: undervoltage UVP
товару немає в наявності
В кошику  од. на суму  грн.
IPB029N06N3GATMA1 IPB029N06N3GATMA1 INFINEON TECHNOLOGIES IPB029N06N3G-DTE.pdf Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 60V; 120A; 188W; PG-TO263-3
Polarisation: unipolar
Technology: OptiMOS™ 3
Kind of channel: enhancement
Gate-source voltage: ±20V
Mounting: SMD
Case: PG-TO263-3
Drain-source voltage: 60V
Drain current: 120A
On-state resistance: 2.9mΩ
Type of transistor: N-MOSFET
Power dissipation: 188W
товару немає в наявності
В кошику  од. на суму  грн.
IPD95R750P7ATMA1 IPD95R750P7ATMA1 INFINEON TECHNOLOGIES IPD95R750P7.pdf Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 950V; 5.5A; 73W; DPAK; ESD
Type of transistor: N-MOSFET
Technology: CoolMOS™ P7
Polarisation: unipolar
Drain-source voltage: 950V
Drain current: 5.5A
Power dissipation: 73W
Case: DPAK
Gate-source voltage: ±20V
On-state resistance: 0.75Ω
Mounting: SMD
Gate charge: 23nC
Kind of package: reel
Kind of channel: enhancement
Version: ESD
товару немає в наявності
В кошику  од. на суму  грн.
CY14E116L-ZS25XI INFINEON TECHNOLOGIES ?docID=50503 Category: Parallel SRAM memories - integ. circ.
Description: IC: SRAM memory; 16MbSRAM; 2Mx8bit; 25ns; TSOP44 II; parallel
Case: TSOP44 II
Mounting: SMD
Kind of package: in-tray
Type of integrated circuit: SRAM memory
Kind of memory: NV SRAM
Memory organisation: 2Mx8bit
Access time: 25ns
Kind of interface: parallel
Memory: 16Mb SRAM
Operating temperature: -40...85°C
Supply voltage: 4.5...5.5V DC
товару немає в наявності
В кошику  од. на суму  грн.
IPD50N04S408ATMA1 INFINEON TECHNOLOGIES Infineon-IPD50N04S4_08-DS-v01_00-en.pdf?fileId=db3a304328c6bd5c01291c847b245e45 Category: SMD N channel transistors
Description: Transistor: N-MOSFET; OptiMOS® -T2; unipolar; 40V; 47A; Idm: 200A
Case: PG-TO252-3-313
Mounting: SMD
Drain current: 47A
On-state resistance: 7.9mΩ
Type of transistor: N-MOSFET
Power dissipation: 46W
Polarisation: unipolar
Technology: OptiMOS® -T2
Kind of channel: enhancement
Gate-source voltage: ±20V
Pulsed drain current: 200A
Drain-source voltage: 40V
товару немає в наявності
В кошику  од. на суму  грн.
IPD50N04S4L08ATMA1 INFINEON TECHNOLOGIES Infineon-IPD50N04S4L_08-DS-v01_00-en.pdf?folderId=db3a304412b407950112b42b75b74520&fileId=db3a304328c6bd5c01291c87fdc25e50&ack=t Category: SMD N channel transistors
Description: Transistor: N-MOSFET; OptiMOS® -T2; unipolar; 40V; 49A; Idm: 200A
Type of transistor: N-MOSFET
Polarisation: unipolar
Case: PG-TO252-3-313
Mounting: SMD
Kind of channel: enhancement
On-state resistance: 7.3mΩ
Power dissipation: 46W
Technology: OptiMOS® -T2
Gate-source voltage: -16...20V
Pulsed drain current: 200A
Drain-source voltage: 40V
Drain current: 49A
товару немає в наявності
В кошику  од. на суму  грн.
BSC050N04LSGATMA1 BSC050N04LSGATMA1 INFINEON TECHNOLOGIES BSC050N04LSG-DTE.pdf Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 40V; 71A; 57W; PG-TDSON-8
Type of transistor: N-MOSFET
Polarisation: unipolar
Case: PG-TDSON-8
Mounting: SMD
Kind of channel: enhancement
On-state resistance: 5mΩ
Power dissipation: 57W
Technology: OptiMOS™ 3
Gate-source voltage: ±20V
Drain-source voltage: 40V
Drain current: 71A
товару немає в наявності
В кошику  од. на суму  грн.
IAUA250N04S6N005AUMA1 INFINEON TECHNOLOGIES Infineon-IAUA250N04S6N005-DataSheet-v01_00-EN.pdf?fileId=8ac78c8c7f2a768a017fac2a170d3f38 Category: SMD N channel transistors
Description: Transistor: N-MOSFET; OptiMOS™ 6; unipolar; 40V; 62A; Idm: 1500A
Type of transistor: N-MOSFET
Polarisation: unipolar
Case: PG-HSOF-5
Mounting: SMD
Kind of package: reel; tape
Kind of channel: enhancement
On-state resistance: 0.7mΩ
Power dissipation: 250W
Gate charge: 170nC
Technology: OptiMOS™ 6
Gate-source voltage: ±20V
Pulsed drain current: 1.5kA
Drain-source voltage: 40V
Drain current: 62A
товару немає в наявності
В кошику  од. на суму  грн.
IAUA250N04S6N006AUMA1 INFINEON TECHNOLOGIES Category: SMD N channel transistors
Description: Transistor: N-MOSFET; OptiMOS™ 6; unipolar; 40V; 57A; Idm: 1500A
Type of transistor: N-MOSFET
Polarisation: unipolar
Case: PG-HSOF-5
Mounting: SMD
Kind of package: reel; tape
Kind of channel: enhancement
On-state resistance: 0.7mΩ
Power dissipation: 250W
Gate charge: 169nC
Technology: OptiMOS™ 6
Gate-source voltage: ±20V
Pulsed drain current: 1.5kA
Drain-source voltage: 40V
Drain current: 57A
товару немає в наявності
В кошику  од. на суму  грн.
IAUA250N04S6N007AUMA1 INFINEON TECHNOLOGIES Category: SMD N channel transistors
Description: Transistor: N-MOSFET; OptiMOS™ 6; unipolar; 40V; 55A; Idm: 1350A
Type of transistor: N-MOSFET
Polarisation: unipolar
Case: PG-HSOF-5
Mounting: SMD
Kind of package: reel; tape
Kind of channel: enhancement
On-state resistance: 0.8Ω
Power dissipation: 250W
Gate charge: 151nC
Technology: OptiMOS™ 6
Gate-source voltage: ±20V
Pulsed drain current: 1350A
Drain-source voltage: 40V
Drain current: 55A
товару немає в наявності
В кошику  од. на суму  грн.
IAUA250N04S6N007EAUMA1 INFINEON TECHNOLOGIES Infineon-IAUA250N04S6N007E-DataSheet-v01_00-EN.pdf?fileId=8ac78c8c7f2a768a017fac29beb03f29 Category: SMD N channel transistors
Description: Transistor: N-MOSFET; OptiMOS™ 6; unipolar; 40V; 55A; Idm: 1300A
Type of transistor: N-MOSFET
Polarisation: unipolar
Case: PG-HSOF-5
Mounting: SMD
Kind of package: reel; tape
Kind of channel: enhancement
On-state resistance: 0.83Ω
Power dissipation: 192W
Gate charge: 128nC
Technology: OptiMOS™ 6
Gate-source voltage: ±20V
Pulsed drain current: 1.3kA
Drain-source voltage: 40V
Drain current: 55A
товару немає в наявності
В кошику  од. на суму  грн.
IAUA250N04S6N008AUMA1 INFINEON TECHNOLOGIES Infineon-IAUA250N04S6N008-DataSheet-v01_00-EN.pdf?fileId=8ac78c8c7f2a768a017fac2a23773f3b Category: SMD N channel transistors
Description: Transistor: N-MOSFET; OptiMOS™ 6; unipolar; 40V; 51A; Idm: 1100A
Type of transistor: N-MOSFET
Polarisation: unipolar
Case: PG-HSOF-5
Mounting: SMD
Kind of package: reel; tape
Kind of channel: enhancement
On-state resistance: 960µΩ
Power dissipation: 172W
Gate charge: 109nC
Technology: OptiMOS™ 6
Gate-source voltage: ±20V
Pulsed drain current: 1100A
Drain-source voltage: 40V
Drain current: 51A
товару немає в наявності
В кошику  од. на суму  грн.
ISP452 ISP452 INFINEON TECHNOLOGIES ISP452.pdf Category: Power switches - integrated circuits
Description: IC: power switch; high-side; 700mA; Ch: 1; N-Channel; SMD; SOT223-3
Type of integrated circuit: power switch
Kind of integrated circuit: high-side
Output current: 0.7A
Mounting: SMD
Number of channels: 1
Case: SOT223-3
Supply voltage: 5...34V DC
On-state resistance: 0.16Ω
Kind of output: N-Channel
Technology: Industrial PROFET
на замовлення 684 шт:
термін постачання 21-30 дні (днів)
3+158.07 грн
5+131.49 грн
8+126.14 грн
20+119.26 грн
100+117.73 грн
500+114.67 грн
Мінімальне замовлення: 3
В кошику  од. на суму  грн.
IRFS4310ZTRLPBF IRFS4310ZTRLPBF INFINEON TECHNOLOGIES irfb4310zpbf.pdf Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 100V; 127A; 250W; D2PAK
Type of transistor: N-MOSFET
Technology: HEXFET®
Polarisation: unipolar
Drain-source voltage: 100V
Drain current: 127A
Power dissipation: 250W
Case: D2PAK
Mounting: SMD
Kind of package: reel
Kind of channel: enhancement
товару немає в наявності
В кошику  од. на суму  грн.
IR2128SPBF IR2128SPBF INFINEON TECHNOLOGIES IR21271SPBF.pdf Category: MOSFET/IGBT drivers
Description: IC: driver; high-side,gate driver; SO8; -420÷200mA; 625mW; Ch: 1
Type of integrated circuit: driver
Kind of integrated circuit: gate driver; high-side
Case: SO8
Output current: -420...200mA
Power: 625mW
Number of channels: 1
Supply voltage: 12...20V DC
Mounting: SMD
Operating temperature: -40...125°C
Kind of package: tube
Voltage class: 600V
Turn-on time: 0.2µs
Turn-off time: 150ns
на замовлення 33 шт:
термін постачання 21-30 дні (днів)
3+188.53 грн
8+121.55 грн
21+115.44 грн
Мінімальне замовлення: 3
В кошику  од. на суму  грн.
IRFR3607TRPBF IRFR3607TRPBF INFINEON TECHNOLOGIES irfr3607pbf.pdf Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 75V; 80A; 140W; DPAK
Type of transistor: N-MOSFET
Technology: HEXFET®
Polarisation: unipolar
Drain-source voltage: 75V
Drain current: 80A
Power dissipation: 140W
Case: DPAK
Mounting: SMD
Kind of package: reel
Kind of channel: enhancement
товару немає в наявності
В кошику  од. на суму  грн.
TT320N18SOF TT320N18SOF INFINEON TECHNOLOGIES TT320N18SOF_TD320N18SOF.pdf Category: Thyristor modules
Description: Module: thyristor; double series; 1.8kV; 320A; BG-PB50SB-1; screw
Gate current: 150mA
Max. forward impulse current: 9.5kA
Electrical mounting: FASTON connectors; screw
Mechanical mounting: screw
Type of module: thyristor
Case: BG-PB50SB-1
Max. off-state voltage: 1.8kV
Max. forward voltage: 1.47V
Load current: 320A
Semiconductor structure: double series
на замовлення 2 шт:
термін постачання 21-30 дні (днів)
1+7277.93 грн
В кошику  од. на суму  грн.
IDW40G65C5XKSA1 IDW40G65C5XKSA1 INFINEON TECHNOLOGIES IDW40G65C5_Final_Datasheet_v_2_1.pdf?folderId=db3a304314dca38901151224afae0c96&fileId=db3a30433899edae0138a4c399d32237 Category: THT Schottky diodes
Description: Diode: Schottky rectifying; SiC; THT; 650V; 40A; PG-TO247-3; 112W
Case: PG-TO247-3
Max. off-state voltage: 650V
Max. forward voltage: 1.8V
Load current: 40A
Semiconductor structure: single diode
Max. forward impulse current: 153A
Leakage current: 8.2µA
Power dissipation: 112W
Kind of package: tube
Type of diode: Schottky rectifying
Technology: CoolSiC™ 5G; SiC
Mounting: THT
товару немає в наявності
В кошику  од. на суму  грн.
CY7C2245KV18-450BZXI INFINEON TECHNOLOGIES Infineon-CY7C2245KV18-450BZXI-DataSheet-v05_00-EN.pdf?fileId=8ac78c8c7d0d8da4017d0ec2b7a837b0 Category: Parallel SRAM memories - integ. circ.
Description: IC: SRAM memory; 36MbSRAM; 1Mx36bit; FBGA165; parallel; -40÷85°C
Type of integrated circuit: SRAM memory
Kind of memory: SRAM
Memory: 36Mb SRAM
Memory organisation: 1Mx36bit
Case: FBGA165
Kind of interface: parallel
Mounting: SMD
Operating temperature: -40...85°C
Kind of package: in-tray
Supply voltage: 1.7...1.9V DC
Frequency: 450MHz
товару немає в наявності
В кошику  од. на суму  грн.
BCR320UE6327HTSA1 BCR320UE6327HTSA1 INFINEON TECHNOLOGIES BCR320UE6327.pdf Category: LED drivers
Description: IC: driver; single transistor; current regulator,LED driver
Mounting: SMD
Kind of integrated circuit: current regulator; LED driver
Topology: single transistor
Case: SC74
Operating voltage: 0...25V DC
Output current: 0.25A
Type of integrated circuit: driver
Number of channels: 1
на замовлення 1008 шт:
термін постачання 21-30 дні (днів)
15+28.82 грн
Мінімальне замовлення: 15
В кошику  од. на суму  грн.
BCR321UE6327HTSA1 INFINEON TECHNOLOGIES dgdl?fileId=5546d4624b0b249c014b7d69949b463b Category: LED drivers
Description: IC: driver; single transistor; current regulator,LED driver
Mounting: SMD
Kind of integrated circuit: current regulator; LED driver
Topology: single transistor
Case: SC74
Operating voltage: 0...4.5V DC
Output current: 0.25A
Type of integrated circuit: driver
Number of channels: 1
товару немає в наявності
В кошику  од. на суму  грн.
PVI1050NSPBF PVI1050NSPBF INFINEON TECHNOLOGIES pvin.pdf Category: Optocouplers - others
Description: Optocoupler; SMD; Ch: 2; OUT: photodiode; 2.5kV; Gull wing 8
Type of optocoupler: optocoupler
Mounting: SMD
Number of channels: 2
Kind of output: photodiode
Insulation voltage: 2.5kV
Case: Gull wing 8
Turn-on time: 0.3ms
Turn-off time: 220µs
Manufacturer series: PVI-NPbF
товару немає в наявності
В кошику  од. на суму  грн.
IPA65R280E6XKSA1 IPA65R280E6XKSA1 INFINEON TECHNOLOGIES IPA65R280E6-DTE.pdf Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 650V; 13.8A; 32W; TO220FP
Type of transistor: N-MOSFET
Technology: CoolMOS™
Polarisation: unipolar
Drain-source voltage: 650V
Drain current: 13.8A
Power dissipation: 32W
Case: TO220FP
Gate-source voltage: ±20V
On-state resistance: 0.28Ω
Mounting: THT
Kind of package: tube
Kind of channel: enhancement
товару немає в наявності
В кошику  од. на суму  грн.
IPW65R280C6FKSA1 IPW65R280C6FKSA1 INFINEON TECHNOLOGIES IPW65R280C6-DTE.pdf Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 650V; 13.8A; 104W; PG-TO247-3
Type of transistor: N-MOSFET
Technology: CoolMOS™
Polarisation: unipolar
Drain-source voltage: 650V
Drain current: 13.8A
Power dissipation: 104W
Case: PG-TO247-3
Gate-source voltage: ±20V
On-state resistance: 0.28Ω
Mounting: THT
Kind of package: tube
Kind of channel: enhancement
товару немає в наявності
В кошику  од. на суму  грн.
IPI65R280E6XKSA1 IPI65R280E6XKSA1 INFINEON TECHNOLOGIES IPI65R280E6-DTE.pdf Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 650V; 13.8A; 104W; PG-TO262-3
Type of transistor: N-MOSFET
Technology: CoolMOS™
Polarisation: unipolar
Drain-source voltage: 650V
Drain current: 13.8A
Power dissipation: 104W
Case: PG-TO262-3
Gate-source voltage: ±20V
On-state resistance: 0.28Ω
Mounting: THT
Kind of channel: enhancement
товару немає в наявності
В кошику  од. на суму  грн.
IPP65R280E6XKSA1 IPP65R280E6XKSA1 INFINEON TECHNOLOGIES IPP65R280E6-DTE.pdf Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 650V; 13.8A; 104W; PG-TO220-3
Type of transistor: N-MOSFET
Technology: CoolMOS™
Polarisation: unipolar
Drain-source voltage: 650V
Drain current: 13.8A
Power dissipation: 104W
Case: PG-TO220-3
Gate-source voltage: ±20V
On-state resistance: 0.28Ω
Mounting: THT
Kind of package: tube
Kind of channel: enhancement
товару немає в наявності
В кошику  од. на суму  грн.
IPB65R280E6ATMA1 IPB65R280E6ATMA1 INFINEON TECHNOLOGIES IPB65R280E6-DTE.pdf Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 650V; 13.8A; 104W; PG-TO263-3
Type of transistor: N-MOSFET
Technology: CoolMOS™
Polarisation: unipolar
Drain-source voltage: 650V
Drain current: 13.8A
Power dissipation: 104W
Case: PG-TO263-3
Gate-source voltage: ±20V
On-state resistance: 0.28Ω
Mounting: SMD
Kind of channel: enhancement
товару немає в наявності
В кошику  од. на суму  грн.
IPI65R280C6XKSA1 IPI65R280C6XKSA1 INFINEON TECHNOLOGIES IPI65R280C6-DTE.pdf Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 650V; 13.8A; 104W; PG-TO262-3
Type of transistor: N-MOSFET
Technology: CoolMOS™
Polarisation: unipolar
Drain-source voltage: 650V
Drain current: 13.8A
Power dissipation: 104W
Case: PG-TO262-3
Gate-source voltage: ±20V
On-state resistance: 0.28Ω
Mounting: THT
Kind of channel: enhancement
товару немає в наявності
В кошику  од. на суму  грн.
IPA65R190E6XKSA1 IPA65R190E6XKSA1 INFINEON TECHNOLOGIES IPA65R190E6-DTE.pdf Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 650V; 20.2A; 34W; TO220FP
Type of transistor: N-MOSFET
Technology: CoolMOS™
Polarisation: unipolar
Drain-source voltage: 650V
Drain current: 20.2A
Power dissipation: 34W
Case: TO220FP
Gate-source voltage: ±20V
On-state resistance: 0.19Ω
Mounting: THT
Kind of package: tube
Kind of channel: enhancement
на замовлення 120 шт:
термін постачання 21-30 дні (днів)
2+241.23 грн
7+151.37 грн
17+142.96 грн
100+137.61 грн
Мінімальне замовлення: 2
В кошику  од. на суму  грн.
IPA65R190C7XKSA1 IPA65R190C7XKSA1 INFINEON TECHNOLOGIES IPA65R190C7-DTE.pdf Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 650V; 8A; 30W; TO220FP
Type of transistor: N-MOSFET
Technology: CoolMOS™
Polarisation: unipolar
Drain-source voltage: 650V
Drain current: 8A
Power dissipation: 30W
Case: TO220FP
Gate-source voltage: ±20V
On-state resistance: 0.19Ω
Mounting: THT
Kind of package: tube
Kind of channel: enhancement
товару немає в наявності
В кошику  од. на суму  грн.
IPA65R190CFDXKSA1 IPA65R190CFDXKSA1 INFINEON TECHNOLOGIES IPA65R190CFD-DTE.pdf Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 650V; 17.5A; 34W; TO220FP
Type of transistor: N-MOSFET
Technology: CoolMOS™
Polarisation: unipolar
Drain-source voltage: 650V
Drain current: 17.5A
Power dissipation: 34W
Case: TO220FP
Gate-source voltage: ±20V
On-state resistance: 0.19Ω
Mounting: THT
Kind of package: tube
Kind of channel: enhancement
товару немає в наявності
В кошику  од. на суму  грн.
IPA65R310CFDXKSA1 IPA65R310CFDXKSA1 INFINEON TECHNOLOGIES IPA65R310CFD-DTE.pdf Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 650V; 11.4A; 32W; TO220FP
Type of transistor: N-MOSFET
Technology: CoolMOS™
Polarisation: unipolar
Drain-source voltage: 650V
Drain current: 11.4A
Power dissipation: 32W
Case: TO220FP
Gate-source voltage: ±20V
On-state resistance: 0.31Ω
Mounting: THT
Kind of package: tube
Kind of channel: enhancement
товару немає в наявності
В кошику  од. на суму  грн.
BSZ100N06LS3GATMA1 BSZ100N06LS3GATMA1 INFINEON TECHNOLOGIES BSZ100N06LS3G-DTE.pdf Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 60V; 20A; 50W; PG-TSDSON-8
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 60V
Drain current: 20A
Power dissipation: 50W
Case: PG-TSDSON-8
Gate-source voltage: ±20V
On-state resistance: 10mΩ
Mounting: SMD
Kind of channel: enhancement
Technology: OptiMOS™ 3
товару немає в наявності
В кошику  од. на суму  грн.
IRFS4610TRLPBF IRFS4610TRLPBF INFINEON TECHNOLOGIES irfs4410pbf.pdf Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 100V; 73A; 190W; D2PAK
Type of transistor: N-MOSFET
Technology: HEXFET®
Polarisation: unipolar
Drain-source voltage: 100V
Drain current: 73A
Power dissipation: 190W
Case: D2PAK
Mounting: SMD
Kind of package: reel
Kind of channel: enhancement
товару немає в наявності
В кошику  од. на суму  грн.
IDH16G65C6XKSA1 IDH16G65C6XKSA1 INFINEON TECHNOLOGIES IDH16G65C6.pdf Category: THT Schottky diodes
Description: Diode: Schottky rectifying; SiC; THT; 650V; 16A; PG-TO220-2; 97W
Case: PG-TO220-2
Max. off-state voltage: 650V
Max. forward voltage: 1.25V
Load current: 16A
Semiconductor structure: single diode
Max. forward impulse current: 65A
Leakage current: 123µA
Power dissipation: 97W
Kind of package: tube
Type of diode: Schottky rectifying
Technology: CoolSiC™ 5G; SiC
Heatsink thickness: 1.17...1.37mm
Mounting: THT
товару немає в наявності
В кошику  од. на суму  грн.
IPL60R075CFD7 IPL60R075CFD7 INFINEON TECHNOLOGIES IPL60R075CFD7.pdf Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 600V; 21A; 189W; PG-VSON-4
Mounting: SMD
Drain-source voltage: 600V
Drain current: 21A
On-state resistance: 0.149Ω
Type of transistor: N-MOSFET
Power dissipation: 189W
Polarisation: unipolar
Gate charge: 67nC
Kind of channel: enhancement
Gate-source voltage: ±20V
Technology: OptiMOS™
Case: PG-VSON-4
товару немає в наявності
В кошику  од. на суму  грн.
IPW60R075CPFKSA1 IPW60R075CPFKSA1 INFINEON TECHNOLOGIES IPW60R075CP-DTE.pdf Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 600V; 39A; 313W; PG-TO247-3
Mounting: THT
Drain-source voltage: 600V
Drain current: 39A
On-state resistance: 75mΩ
Type of transistor: N-MOSFET
Power dissipation: 313W
Polarisation: unipolar
Kind of package: tube
Kind of channel: enhancement
Gate-source voltage: ±20V
Technology: CoolMOS™ CP
Case: PG-TO247-3
товару немає в наявності
В кошику  од. на суму  грн.
BCR602XTSA1 BCR602XTSA1 INFINEON TECHNOLOGIES Infineon-BCR602-DS-v01_01-EN.pdf?fileId=5546d46268554f4a016855acb7e80020 Category: LED drivers
Description: IC: driver; current regulator,LED driver; PG-SOT23-6; 10mA; Ch: 1
Type of integrated circuit: driver
Kind of integrated circuit: current regulator; LED driver
Case: PG-SOT23-6
Integrated circuit features: linear dimming; PWM
Mounting: SMD
Operating voltage: 8...60V DC
Output current: 10mA
Number of channels: 1
Protection: overheating OTP
на замовлення 1586 шт:
термін постачання 21-30 дні (днів)
10+45.28 грн
11+34.94 грн
35+26.30 грн
96+24.85 грн
250+23.93 грн
Мінімальне замовлення: 10
В кошику  од. на суму  грн.
BCR420U BCR420U INFINEON TECHNOLOGIES BCR420U.pdf Category: LED drivers
Description: IC: driver; single transistor; current regulator,LED driver
Type of integrated circuit: driver
Kind of integrated circuit: current regulator; LED driver
Case: SC74
Output current: 150...200mA
Number of channels: 1
Integrated circuit features: linear dimming
Mounting: SMD
Operating voltage: 1.4...40V DC
Topology: single transistor
на замовлення 465 шт:
термін постачання 21-30 дні (днів)
25+17.95 грн
30+14.53 грн
75+12.69 грн
200+12.00 грн
Мінімальне замовлення: 25
В кошику  од. на суму  грн.
BCR402U BCR402U INFINEON TECHNOLOGIES bcr402u.pdf Category: LED drivers
Description: IC: driver; single transistor; current regulator,LED driver
Type of integrated circuit: driver
Kind of integrated circuit: current regulator; LED driver
Case: SC74
Output current: 20...65mA
Number of channels: 1
Integrated circuit features: linear dimming
Mounting: SMD
Operating voltage: 1.4...40V DC
Topology: single transistor
на замовлення 140 шт:
термін постачання 21-30 дні (днів)
20+25.03 грн
25+20.87 грн
60+16.51 грн
Мінімальне замовлення: 20
В кошику  од. на суму  грн.
BCR402RE6327 BCR402RE6327 INFINEON TECHNOLOGIES BCR402R.pdf Category: LED drivers
Description: IC: driver; single transistor; current regulator,LED driver
Type of integrated circuit: driver
Kind of integrated circuit: current regulator; LED driver
Case: SOT143R
Output current: 20...60mA
Number of channels: 1
Integrated circuit features: linear dimming
Mounting: SMD
Operating voltage: 1.2...18V DC
Topology: single transistor
на замовлення 1770 шт:
термін постачання 21-30 дні (днів)
18+23.88 грн
25+16.82 грн
72+12.83 грн
197+12.13 грн
Мінімальне замовлення: 18
В кошику  од. на суму  грн.
BSO080P03SHXUMA1 BSO080P03SHXUMA1 INFINEON TECHNOLOGIES BSO080P03SHXUMA1-DTE.PDF Category: SMD P channel transistors
Description: Transistor: P-MOSFET; unipolar; -30V; -12.6A; 1.79W; PG-DSO-8
Type of transistor: P-MOSFET
Polarisation: unipolar
Drain-source voltage: -30V
Drain current: -12.6A
Power dissipation: 1.79W
Case: PG-DSO-8
Gate-source voltage: ±25V
On-state resistance: 8mΩ
Mounting: SMD
Kind of channel: enhancement
Technology: OptiMOS™ P
товару немає в наявності
В кошику  од. на суму  грн.
BSP78 BSP78 INFINEON TECHNOLOGIES BSP78.pdf Category: Power switches - integrated circuits
Description: IC: power switch; low-side; 3A; Ch: 1; N-Channel; SMD; SOT223-3
Type of integrated circuit: power switch
Kind of integrated circuit: low-side
Output current: 3A
Number of channels: 1
Kind of output: N-Channel
Mounting: SMD
Case: SOT223-3
On-state resistance: 35mΩ
Technology: HITFET®
Output voltage: 42V
на замовлення 2773 шт:
термін постачання 21-30 дні (днів)
3+200.06 грн
10+121.55 грн
13+73.39 грн
34+69.57 грн
1000+68.04 грн
2000+67.28 грн
Мінімальне замовлення: 3
В кошику  од. на суму  грн.
BTS282ZE3230AKSA2 BTS282ZE3230AKSA2 INFINEON TECHNOLOGIES BTS282Z.pdf Category: Power switches - integrated circuits
Description: IC: power switch; low-side; 36A; Ch: 1; N-Channel; THT; tube; 300W
Type of integrated circuit: power switch
Kind of integrated circuit: low-side
Output current: 36A
Number of channels: 1
Kind of output: N-Channel
Mounting: THT
Case: PG-TO220-7-12
On-state resistance: 6.5mΩ
Kind of package: tube
Technology: TEMPFET®
Operating temperature: -40...175°C
Output voltage: 49V
Power dissipation: 300W
Integrated circuit features: internal temperature sensor
на замовлення 10 шт:
термін постачання 21-30 дні (днів)
1+519.50 грн
3+331.79 грн
8+314.20 грн
В кошику  од. на суму  грн.
BTS5120-2EKA BTS5120-2EKA INFINEON TECHNOLOGIES BTS5120-2EKA.pdf Category: Power switches - integrated circuits
Description: IC: power switch; high-side; 2A; Ch: 2; N-Channel; SMD; SO14
Output current: 2A
Type of integrated circuit: power switch
Number of channels: 2
Kind of output: N-Channel
Technology: PROFET™+ 12V
Kind of integrated circuit: high-side
Mounting: SMD
Case: SO14
Supply voltage: 8...18V DC
On-state resistance: 0.22Ω
на замовлення 1898 шт:
термін постачання 21-30 дні (днів)
3+199.24 грн
10+120.79 грн
13+73.39 грн
34+69.57 грн
1000+67.28 грн
Мінімальне замовлення: 3
В кошику  од. на суму  грн.
BTS282ZE3180AATMA2 BTS282ZE3180AATMA2 INFINEON TECHNOLOGIES BTS282Z.pdf Category: Power switches - integrated circuits
Description: IC: power switch; low-side; 36A; Ch: 1; N-Channel; SMD; PG-TO263-7-1
Operating temperature: -40...175°C
Case: PG-TO263-7-1
On-state resistance: 6.5mΩ
Output voltage: 49V
Output current: 36A
Type of integrated circuit: power switch
Number of channels: 1
Kind of output: N-Channel
Power dissipation: 300W
Integrated circuit features: internal temperature sensor
Kind of package: reel; tape
Technology: TEMPFET®
Kind of integrated circuit: low-side
Mounting: SMD
на замовлення 87 шт:
термін постачання 21-30 дні (днів)
1+493.98 грн
3+316.50 грн
8+298.92 грн
В кошику  од. на суму  грн.
BFN26E6327 BFN26E6327 INFINEON TECHNOLOGIES BFN26.pdf Category: NPN SMD transistors
Description: Transistor: NPN; bipolar; 300V; 0.2A; 0.36W; SOT23
Type of transistor: NPN
Polarisation: bipolar
Collector-emitter voltage: 300V
Collector current: 0.2A
Power dissipation: 0.36W
Case: SOT23
Mounting: SMD
Frequency: 70MHz
на замовлення 1541 шт:
термін постачання 21-30 дні (днів)
41+10.13 грн
65+5.89 грн
192+4.70 грн
528+4.44 грн
Мінімальне замовлення: 41
В кошику  од. на суму  грн.
IPW60R037P7XKSA1 IPW60R037P7XKSA1 INFINEON TECHNOLOGIES IPW60R037P7.pdf Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 600V; 48A; 255W; PG-TO247-3; ESD
Type of transistor: N-MOSFET
Technology: CoolMOS™ P7
Polarisation: unipolar
Drain-source voltage: 600V
Drain current: 48A
Power dissipation: 255W
Case: PG-TO247-3
Gate-source voltage: ±20V
On-state resistance: 37mΩ
Mounting: THT
Gate charge: 121nC
Kind of package: tube
Kind of channel: enhancement
Version: ESD
товару немає в наявності
В кошику  од. на суму  грн.
IRFP4368PBF IRFP4368PBF INFINEON TECHNOLOGIES irfp4368pbf.pdf description Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 75V; 350A; 520W; TO247AC
Type of transistor: N-MOSFET
Technology: HEXFET®
Polarisation: unipolar
Drain-source voltage: 75V
Drain current: 350A
Power dissipation: 520W
Case: TO247AC
Gate-source voltage: ±20V
On-state resistance: 1.8mΩ
Mounting: THT
Gate charge: 380nC
Kind of package: tube
Kind of channel: enhancement
товару немає в наявності
В кошику  од. на суму  грн.
IRFP4368PBFXKMA1 IRFP4368PBFXKMA1 INFINEON TECHNOLOGIES Infineon-IRFP4368-DataSheet-v01_01-EN.pdf?fileId=5546d462533600a40153562c61512015 Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 75V; 350A; 520W; TO247AC
Type of transistor: N-MOSFET
Technology: HEXFET®
Polarisation: unipolar
Drain-source voltage: 75V
Drain current: 350A
Power dissipation: 520W
Case: TO247AC
Gate-source voltage: ±20V
On-state resistance: 1.8mΩ
Mounting: THT
Gate charge: 380nC
Kind of package: tube
Kind of channel: enhancement
на замовлення 14 шт:
термін постачання 21-30 дні (днів)
1+559.02 грн
4+300.44 грн
9+284.39 грн
В кошику  од. на суму  грн.
CY62137EV30LL-45ZSXIT INFINEON TECHNOLOGIES Infineon-CY62137EV30_MoBL_2-Mbit_(128_K_16)_Static_RAM-DataSheet-v10_00-EN.pdf?fileId=8ac78c8c7d0d8da4017d0ebe8fb93241&utm_source=cypress&utm_medium=referral&utm_campaign=202110_globe_en_all_integration-files Category: Parallel SRAM memories - integ. circ.
Description: IC: SRAM memory; 2MbSRAM; 128kx16bit; 45ns; TSOP44 II; parallel
Operating temperature: -40...85°C
Case: TSOP44 II
Supply voltage: 2.2...3.6V DC
Type of integrated circuit: SRAM memory
Kind of memory: SRAM
Memory organisation: 128kx16bit
Access time: 45ns
Kind of package: reel; tape
Kind of interface: parallel
Memory: 2Mb SRAM
Mounting: SMD
товару немає в наявності
В кошику  од. на суму  грн.
CY62137FV18LL-55BVXIT INFINEON TECHNOLOGIES Infineon-CY62137FV18_MoBL(R)_2-Mbit_(128_K_x_16)_Static_RAM-DataSheet-v14_00-EN.pdf?fileId=8ac78c8c7d0d8da4017d0ebe93e13249 Category: Parallel SRAM memories - integ. circ.
Description: IC: SRAM memory; 2MbSRAM; 128kx16bit; 55ns; VFBGA48; parallel
Operating temperature: -40...85°C
Case: VFBGA48
Supply voltage: 1.65...2.25V DC
Type of integrated circuit: SRAM memory
Kind of memory: SRAM
Memory organisation: 128kx16bit
Access time: 55ns
Kind of package: reel; tape
Kind of interface: parallel
Memory: 2Mb SRAM
Mounting: SMD
товару немає в наявності
В кошику  од. на суму  грн.
CY62137FV30LL-45BVXIT INFINEON TECHNOLOGIES Infineon-CY62137FV30_MoBL_2-Mbit_(128_K_16)_Static_RAM-DataSheet-v17_00-EN.pdf?fileId=8ac78c8c7d0d8da4017d0ebe9762324f Category: Parallel SRAM memories - integ. circ.
Description: IC: SRAM memory; 2MbSRAM; 128kx16bit; 45ns; VFBGA48; parallel
Operating temperature: -40...85°C
Case: VFBGA48
Supply voltage: 2.2...3.6V DC
Type of integrated circuit: SRAM memory
Kind of memory: SRAM
Memory organisation: 128kx16bit
Access time: 45ns
Kind of package: reel; tape
Kind of interface: parallel
Memory: 2Mb SRAM
Mounting: SMD
товару немає в наявності
В кошику  од. на суму  грн.
CY62137FV30LL-45ZSXIT INFINEON TECHNOLOGIES Infineon-CY62137FV30_MoBL_2-Mbit_(128_K_16)_Static_RAM-DataSheet-v17_00-EN.pdf?fileId=8ac78c8c7d0d8da4017d0ebe9762324f Category: Parallel SRAM memories - integ. circ.
Description: IC: SRAM memory; 2MbSRAM; 128kx16bit; 45ns; TSOP44 II; parallel
Operating temperature: -40...85°C
Case: TSOP44 II
Supply voltage: 2.2...3.6V DC
Type of integrated circuit: SRAM memory
Kind of memory: SRAM
Memory organisation: 128kx16bit
Access time: 45ns
Kind of package: reel; tape
Kind of interface: parallel
Memory: 2Mb SRAM
Mounting: SMD
товару немає в наявності
В кошику  од. на суму  грн.
CY62137FV30LL-55ZSXET INFINEON TECHNOLOGIES download Category: Parallel SRAM memories - integ. circ.
Description: IC: SRAM memory; 2MbSRAM; 128kx16bit; 55ns; TSOP44 II; parallel
Operating temperature: -40...125°C
Case: TSOP44 II
Supply voltage: 2.2...3.6V DC
Type of integrated circuit: SRAM memory
Kind of memory: SRAM
Memory organisation: 128kx16bit
Access time: 55ns
Kind of package: reel; tape
Kind of interface: parallel
Memory: 2Mb SRAM
Mounting: SMD
товару немає в наявності
В кошику  од. на суму  грн.
BAS3010A03WE6327HTSA1 BAS3010A03WE6327HT.pdf
BAS3010A03WE6327HTSA1
Виробник: INFINEON TECHNOLOGIES
Category: SMD Schottky diodes
Description: Diode: Schottky rectifying; SOD323; SMD; 30V; 1A
Type of diode: Schottky rectifying
Case: SOD323
Mounting: SMD
Max. off-state voltage: 30V
Load current: 1A
Semiconductor structure: single diode
Max. forward impulse current: 10A
на замовлення 1515 шт:
термін постачання 21-30 дні (днів)
Кількість Ціна
17+24.70 грн
23+16.67 грн
50+12.38 грн
100+10.86 грн
122+7.34 грн
334+6.96 грн
1000+6.80 грн
Мінімальне замовлення: 17
В кошику  од. на суму  грн.
IPB026N06NATMA1 IPB026N06N-DTE.pdf
IPB026N06NATMA1
Виробник: INFINEON TECHNOLOGIES
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 60V; 100A; 136W; PG-TO263-3
Mounting: SMD
Case: PG-TO263-3
Drain-source voltage: 60V
Drain current: 100A
On-state resistance: 2.6mΩ
Type of transistor: N-MOSFET
Power dissipation: 136W
Polarisation: unipolar
Technology: OptiMOS™
Kind of channel: enhancement
Gate-source voltage: ±20V
товару немає в наявності
В кошику  од. на суму  грн.
BAT1804E6327HTSA1 BAT18.pdf
BAT1804E6327HTSA1
Виробник: INFINEON TECHNOLOGIES
Category: Diodes - others
Description: Diode: switching; 35V; 100mA; SOT23; double series; Ufmax: 1.2V
Type of diode: switching
Max. off-state voltage: 35V
Load current: 0.1A
Case: SOT23
Mounting: SMD
Semiconductor structure: double series
Features of semiconductor devices: PIN; RF
Max. forward voltage: 1.2V
Kind of package: reel; tape
товару немає в наявності
В кошику  од. на суму  грн.
BSZ130N03MSGATMA1 BSZ130N03MSG-DTE.pdf
BSZ130N03MSGATMA1
Виробник: INFINEON TECHNOLOGIES
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 30V; 31A; 25W; PG-TSDSON-8
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 30V
Drain current: 31A
Power dissipation: 25W
Case: PG-TSDSON-8
Gate-source voltage: ±20V
On-state resistance: 11.5mΩ
Mounting: SMD
Kind of channel: enhancement
Technology: OptiMOS™ 3
товару немає в наявності
В кошику  од. на суму  грн.
IPD70N10S3L12ATMA1 Infineon-IPD70N10S3L-DS-v01_01-en.pdf?folderId=db3a3043156fd5730115c7d50620107c&fileId=db3a3043183a955501188996d3f9675c&ack=t
Виробник: INFINEON TECHNOLOGIES
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; OptiMOS® -T; unipolar; 100V; 48A; Idm: 280A
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 100V
Drain current: 48A
Power dissipation: 125W
Case: PG-TO252-3-11
Gate-source voltage: ±20V
On-state resistance: 11.5mΩ
Mounting: SMD
Kind of channel: enhancement
Technology: OptiMOS® -T
Pulsed drain current: 280A
товару немає в наявності
В кошику  од. на суму  грн.
2ED21091S06FXUMA1 Infineon-2ED21091S06F-DataSheet-v02_10-EN.pdf?fileId=5546d4626cb27db2016cb8d7765529ff
2ED21091S06FXUMA1
Виробник: INFINEON TECHNOLOGIES
Category: MOSFET/IGBT drivers
Description: IC: driver; IGBT half-bridge,MOSFET half-bridge; PG-DSO-8; Ch: 2
Type of integrated circuit: driver
Topology: IGBT half-bridge; MOSFET half-bridge
Kind of integrated circuit: gate driver; high-/low-side
Case: PG-DSO-8
Output current: -0.7...0.29A
Number of channels: 2
Integrated circuit features: integrated bootstrap functionality
Mounting: SMD
Kind of package: reel; tape
Supply voltage: 10...20V
Voltage class: 650V
Protection: undervoltage UVP
товару немає в наявності
В кошику  од. на суму  грн.
IPB029N06N3GATMA1 IPB029N06N3G-DTE.pdf
IPB029N06N3GATMA1
Виробник: INFINEON TECHNOLOGIES
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 60V; 120A; 188W; PG-TO263-3
Polarisation: unipolar
Technology: OptiMOS™ 3
Kind of channel: enhancement
Gate-source voltage: ±20V
Mounting: SMD
Case: PG-TO263-3
Drain-source voltage: 60V
Drain current: 120A
On-state resistance: 2.9mΩ
Type of transistor: N-MOSFET
Power dissipation: 188W
товару немає в наявності
В кошику  од. на суму  грн.
IPD95R750P7ATMA1 IPD95R750P7.pdf
IPD95R750P7ATMA1
Виробник: INFINEON TECHNOLOGIES
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 950V; 5.5A; 73W; DPAK; ESD
Type of transistor: N-MOSFET
Technology: CoolMOS™ P7
Polarisation: unipolar
Drain-source voltage: 950V
Drain current: 5.5A
Power dissipation: 73W
Case: DPAK
Gate-source voltage: ±20V
On-state resistance: 0.75Ω
Mounting: SMD
Gate charge: 23nC
Kind of package: reel
Kind of channel: enhancement
Version: ESD
товару немає в наявності
В кошику  од. на суму  грн.
CY14E116L-ZS25XI ?docID=50503
Виробник: INFINEON TECHNOLOGIES
Category: Parallel SRAM memories - integ. circ.
Description: IC: SRAM memory; 16MbSRAM; 2Mx8bit; 25ns; TSOP44 II; parallel
Case: TSOP44 II
Mounting: SMD
Kind of package: in-tray
Type of integrated circuit: SRAM memory
Kind of memory: NV SRAM
Memory organisation: 2Mx8bit
Access time: 25ns
Kind of interface: parallel
Memory: 16Mb SRAM
Operating temperature: -40...85°C
Supply voltage: 4.5...5.5V DC
товару немає в наявності
В кошику  од. на суму  грн.
IPD50N04S408ATMA1 Infineon-IPD50N04S4_08-DS-v01_00-en.pdf?fileId=db3a304328c6bd5c01291c847b245e45
Виробник: INFINEON TECHNOLOGIES
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; OptiMOS® -T2; unipolar; 40V; 47A; Idm: 200A
Case: PG-TO252-3-313
Mounting: SMD
Drain current: 47A
On-state resistance: 7.9mΩ
Type of transistor: N-MOSFET
Power dissipation: 46W
Polarisation: unipolar
Technology: OptiMOS® -T2
Kind of channel: enhancement
Gate-source voltage: ±20V
Pulsed drain current: 200A
Drain-source voltage: 40V
товару немає в наявності
В кошику  од. на суму  грн.
IPD50N04S4L08ATMA1 Infineon-IPD50N04S4L_08-DS-v01_00-en.pdf?folderId=db3a304412b407950112b42b75b74520&fileId=db3a304328c6bd5c01291c87fdc25e50&ack=t
Виробник: INFINEON TECHNOLOGIES
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; OptiMOS® -T2; unipolar; 40V; 49A; Idm: 200A
Type of transistor: N-MOSFET
Polarisation: unipolar
Case: PG-TO252-3-313
Mounting: SMD
Kind of channel: enhancement
On-state resistance: 7.3mΩ
Power dissipation: 46W
Technology: OptiMOS® -T2
Gate-source voltage: -16...20V
Pulsed drain current: 200A
Drain-source voltage: 40V
Drain current: 49A
товару немає в наявності
В кошику  од. на суму  грн.
BSC050N04LSGATMA1 BSC050N04LSG-DTE.pdf
BSC050N04LSGATMA1
Виробник: INFINEON TECHNOLOGIES
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 40V; 71A; 57W; PG-TDSON-8
Type of transistor: N-MOSFET
Polarisation: unipolar
Case: PG-TDSON-8
Mounting: SMD
Kind of channel: enhancement
On-state resistance: 5mΩ
Power dissipation: 57W
Technology: OptiMOS™ 3
Gate-source voltage: ±20V
Drain-source voltage: 40V
Drain current: 71A
товару немає в наявності
В кошику  од. на суму  грн.
IAUA250N04S6N005AUMA1 Infineon-IAUA250N04S6N005-DataSheet-v01_00-EN.pdf?fileId=8ac78c8c7f2a768a017fac2a170d3f38
Виробник: INFINEON TECHNOLOGIES
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; OptiMOS™ 6; unipolar; 40V; 62A; Idm: 1500A
Type of transistor: N-MOSFET
Polarisation: unipolar
Case: PG-HSOF-5
Mounting: SMD
Kind of package: reel; tape
Kind of channel: enhancement
On-state resistance: 0.7mΩ
Power dissipation: 250W
Gate charge: 170nC
Technology: OptiMOS™ 6
Gate-source voltage: ±20V
Pulsed drain current: 1.5kA
Drain-source voltage: 40V
Drain current: 62A
товару немає в наявності
В кошику  од. на суму  грн.
IAUA250N04S6N006AUMA1
Виробник: INFINEON TECHNOLOGIES
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; OptiMOS™ 6; unipolar; 40V; 57A; Idm: 1500A
Type of transistor: N-MOSFET
Polarisation: unipolar
Case: PG-HSOF-5
Mounting: SMD
Kind of package: reel; tape
Kind of channel: enhancement
On-state resistance: 0.7mΩ
Power dissipation: 250W
Gate charge: 169nC
Technology: OptiMOS™ 6
Gate-source voltage: ±20V
Pulsed drain current: 1.5kA
Drain-source voltage: 40V
Drain current: 57A
товару немає в наявності
В кошику  од. на суму  грн.
IAUA250N04S6N007AUMA1
Виробник: INFINEON TECHNOLOGIES
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; OptiMOS™ 6; unipolar; 40V; 55A; Idm: 1350A
Type of transistor: N-MOSFET
Polarisation: unipolar
Case: PG-HSOF-5
Mounting: SMD
Kind of package: reel; tape
Kind of channel: enhancement
On-state resistance: 0.8Ω
Power dissipation: 250W
Gate charge: 151nC
Technology: OptiMOS™ 6
Gate-source voltage: ±20V
Pulsed drain current: 1350A
Drain-source voltage: 40V
Drain current: 55A
товару немає в наявності
В кошику  од. на суму  грн.
IAUA250N04S6N007EAUMA1 Infineon-IAUA250N04S6N007E-DataSheet-v01_00-EN.pdf?fileId=8ac78c8c7f2a768a017fac29beb03f29
Виробник: INFINEON TECHNOLOGIES
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; OptiMOS™ 6; unipolar; 40V; 55A; Idm: 1300A
Type of transistor: N-MOSFET
Polarisation: unipolar
Case: PG-HSOF-5
Mounting: SMD
Kind of package: reel; tape
Kind of channel: enhancement
On-state resistance: 0.83Ω
Power dissipation: 192W
Gate charge: 128nC
Technology: OptiMOS™ 6
Gate-source voltage: ±20V
Pulsed drain current: 1.3kA
Drain-source voltage: 40V
Drain current: 55A
товару немає в наявності
В кошику  од. на суму  грн.
IAUA250N04S6N008AUMA1 Infineon-IAUA250N04S6N008-DataSheet-v01_00-EN.pdf?fileId=8ac78c8c7f2a768a017fac2a23773f3b
Виробник: INFINEON TECHNOLOGIES
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; OptiMOS™ 6; unipolar; 40V; 51A; Idm: 1100A
Type of transistor: N-MOSFET
Polarisation: unipolar
Case: PG-HSOF-5
Mounting: SMD
Kind of package: reel; tape
Kind of channel: enhancement
On-state resistance: 960µΩ
Power dissipation: 172W
Gate charge: 109nC
Technology: OptiMOS™ 6
Gate-source voltage: ±20V
Pulsed drain current: 1100A
Drain-source voltage: 40V
Drain current: 51A
товару немає в наявності
В кошику  од. на суму  грн.
ISP452 ISP452.pdf
ISP452
Виробник: INFINEON TECHNOLOGIES
Category: Power switches - integrated circuits
Description: IC: power switch; high-side; 700mA; Ch: 1; N-Channel; SMD; SOT223-3
Type of integrated circuit: power switch
Kind of integrated circuit: high-side
Output current: 0.7A
Mounting: SMD
Number of channels: 1
Case: SOT223-3
Supply voltage: 5...34V DC
On-state resistance: 0.16Ω
Kind of output: N-Channel
Technology: Industrial PROFET
на замовлення 684 шт:
термін постачання 21-30 дні (днів)
Кількість Ціна
3+158.07 грн
5+131.49 грн
8+126.14 грн
20+119.26 грн
100+117.73 грн
500+114.67 грн
Мінімальне замовлення: 3
В кошику  од. на суму  грн.
IRFS4310ZTRLPBF irfb4310zpbf.pdf
IRFS4310ZTRLPBF
Виробник: INFINEON TECHNOLOGIES
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 100V; 127A; 250W; D2PAK
Type of transistor: N-MOSFET
Technology: HEXFET®
Polarisation: unipolar
Drain-source voltage: 100V
Drain current: 127A
Power dissipation: 250W
Case: D2PAK
Mounting: SMD
Kind of package: reel
Kind of channel: enhancement
товару немає в наявності
В кошику  од. на суму  грн.
IR2128SPBF IR21271SPBF.pdf
IR2128SPBF
Виробник: INFINEON TECHNOLOGIES
Category: MOSFET/IGBT drivers
Description: IC: driver; high-side,gate driver; SO8; -420÷200mA; 625mW; Ch: 1
Type of integrated circuit: driver
Kind of integrated circuit: gate driver; high-side
Case: SO8
Output current: -420...200mA
Power: 625mW
Number of channels: 1
Supply voltage: 12...20V DC
Mounting: SMD
Operating temperature: -40...125°C
Kind of package: tube
Voltage class: 600V
Turn-on time: 0.2µs
Turn-off time: 150ns
на замовлення 33 шт:
термін постачання 21-30 дні (днів)
Кількість Ціна
3+188.53 грн
8+121.55 грн
21+115.44 грн
Мінімальне замовлення: 3
В кошику  од. на суму  грн.
IRFR3607TRPBF irfr3607pbf.pdf
IRFR3607TRPBF
Виробник: INFINEON TECHNOLOGIES
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 75V; 80A; 140W; DPAK
Type of transistor: N-MOSFET
Technology: HEXFET®
Polarisation: unipolar
Drain-source voltage: 75V
Drain current: 80A
Power dissipation: 140W
Case: DPAK
Mounting: SMD
Kind of package: reel
Kind of channel: enhancement
товару немає в наявності
В кошику  од. на суму  грн.
TT320N18SOF TT320N18SOF_TD320N18SOF.pdf
TT320N18SOF
Виробник: INFINEON TECHNOLOGIES
Category: Thyristor modules
Description: Module: thyristor; double series; 1.8kV; 320A; BG-PB50SB-1; screw
Gate current: 150mA
Max. forward impulse current: 9.5kA
Electrical mounting: FASTON connectors; screw
Mechanical mounting: screw
Type of module: thyristor
Case: BG-PB50SB-1
Max. off-state voltage: 1.8kV
Max. forward voltage: 1.47V
Load current: 320A
Semiconductor structure: double series
на замовлення 2 шт:
термін постачання 21-30 дні (днів)
Кількість Ціна
1+7277.93 грн
В кошику  од. на суму  грн.
IDW40G65C5XKSA1 IDW40G65C5_Final_Datasheet_v_2_1.pdf?folderId=db3a304314dca38901151224afae0c96&fileId=db3a30433899edae0138a4c399d32237
IDW40G65C5XKSA1
Виробник: INFINEON TECHNOLOGIES
Category: THT Schottky diodes
Description: Diode: Schottky rectifying; SiC; THT; 650V; 40A; PG-TO247-3; 112W
Case: PG-TO247-3
Max. off-state voltage: 650V
Max. forward voltage: 1.8V
Load current: 40A
Semiconductor structure: single diode
Max. forward impulse current: 153A
Leakage current: 8.2µA
Power dissipation: 112W
Kind of package: tube
Type of diode: Schottky rectifying
Technology: CoolSiC™ 5G; SiC
Mounting: THT
товару немає в наявності
В кошику  од. на суму  грн.
CY7C2245KV18-450BZXI Infineon-CY7C2245KV18-450BZXI-DataSheet-v05_00-EN.pdf?fileId=8ac78c8c7d0d8da4017d0ec2b7a837b0
Виробник: INFINEON TECHNOLOGIES
Category: Parallel SRAM memories - integ. circ.
Description: IC: SRAM memory; 36MbSRAM; 1Mx36bit; FBGA165; parallel; -40÷85°C
Type of integrated circuit: SRAM memory
Kind of memory: SRAM
Memory: 36Mb SRAM
Memory organisation: 1Mx36bit
Case: FBGA165
Kind of interface: parallel
Mounting: SMD
Operating temperature: -40...85°C
Kind of package: in-tray
Supply voltage: 1.7...1.9V DC
Frequency: 450MHz
товару немає в наявності
В кошику  од. на суму  грн.
BCR320UE6327HTSA1 BCR320UE6327.pdf
BCR320UE6327HTSA1
Виробник: INFINEON TECHNOLOGIES
Category: LED drivers
Description: IC: driver; single transistor; current regulator,LED driver
Mounting: SMD
Kind of integrated circuit: current regulator; LED driver
Topology: single transistor
Case: SC74
Operating voltage: 0...25V DC
Output current: 0.25A
Type of integrated circuit: driver
Number of channels: 1
на замовлення 1008 шт:
термін постачання 21-30 дні (днів)
Кількість Ціна
15+28.82 грн
Мінімальне замовлення: 15
В кошику  од. на суму  грн.
BCR321UE6327HTSA1 dgdl?fileId=5546d4624b0b249c014b7d69949b463b
Виробник: INFINEON TECHNOLOGIES
Category: LED drivers
Description: IC: driver; single transistor; current regulator,LED driver
Mounting: SMD
Kind of integrated circuit: current regulator; LED driver
Topology: single transistor
Case: SC74
Operating voltage: 0...4.5V DC
Output current: 0.25A
Type of integrated circuit: driver
Number of channels: 1
товару немає в наявності
В кошику  од. на суму  грн.
PVI1050NSPBF pvin.pdf
PVI1050NSPBF
Виробник: INFINEON TECHNOLOGIES
Category: Optocouplers - others
Description: Optocoupler; SMD; Ch: 2; OUT: photodiode; 2.5kV; Gull wing 8
Type of optocoupler: optocoupler
Mounting: SMD
Number of channels: 2
Kind of output: photodiode
Insulation voltage: 2.5kV
Case: Gull wing 8
Turn-on time: 0.3ms
Turn-off time: 220µs
Manufacturer series: PVI-NPbF
товару немає в наявності
В кошику  од. на суму  грн.
IPA65R280E6XKSA1 IPA65R280E6-DTE.pdf
IPA65R280E6XKSA1
Виробник: INFINEON TECHNOLOGIES
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 650V; 13.8A; 32W; TO220FP
Type of transistor: N-MOSFET
Technology: CoolMOS™
Polarisation: unipolar
Drain-source voltage: 650V
Drain current: 13.8A
Power dissipation: 32W
Case: TO220FP
Gate-source voltage: ±20V
On-state resistance: 0.28Ω
Mounting: THT
Kind of package: tube
Kind of channel: enhancement
товару немає в наявності
В кошику  од. на суму  грн.
IPW65R280C6FKSA1 IPW65R280C6-DTE.pdf
IPW65R280C6FKSA1
Виробник: INFINEON TECHNOLOGIES
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 650V; 13.8A; 104W; PG-TO247-3
Type of transistor: N-MOSFET
Technology: CoolMOS™
Polarisation: unipolar
Drain-source voltage: 650V
Drain current: 13.8A
Power dissipation: 104W
Case: PG-TO247-3
Gate-source voltage: ±20V
On-state resistance: 0.28Ω
Mounting: THT
Kind of package: tube
Kind of channel: enhancement
товару немає в наявності
В кошику  од. на суму  грн.
IPI65R280E6XKSA1 IPI65R280E6-DTE.pdf
IPI65R280E6XKSA1
Виробник: INFINEON TECHNOLOGIES
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 650V; 13.8A; 104W; PG-TO262-3
Type of transistor: N-MOSFET
Technology: CoolMOS™
Polarisation: unipolar
Drain-source voltage: 650V
Drain current: 13.8A
Power dissipation: 104W
Case: PG-TO262-3
Gate-source voltage: ±20V
On-state resistance: 0.28Ω
Mounting: THT
Kind of channel: enhancement
товару немає в наявності
В кошику  од. на суму  грн.
IPP65R280E6XKSA1 IPP65R280E6-DTE.pdf
IPP65R280E6XKSA1
Виробник: INFINEON TECHNOLOGIES
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 650V; 13.8A; 104W; PG-TO220-3
Type of transistor: N-MOSFET
Technology: CoolMOS™
Polarisation: unipolar
Drain-source voltage: 650V
Drain current: 13.8A
Power dissipation: 104W
Case: PG-TO220-3
Gate-source voltage: ±20V
On-state resistance: 0.28Ω
Mounting: THT
Kind of package: tube
Kind of channel: enhancement
товару немає в наявності
В кошику  од. на суму  грн.
IPB65R280E6ATMA1 IPB65R280E6-DTE.pdf
IPB65R280E6ATMA1
Виробник: INFINEON TECHNOLOGIES
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 650V; 13.8A; 104W; PG-TO263-3
Type of transistor: N-MOSFET
Technology: CoolMOS™
Polarisation: unipolar
Drain-source voltage: 650V
Drain current: 13.8A
Power dissipation: 104W
Case: PG-TO263-3
Gate-source voltage: ±20V
On-state resistance: 0.28Ω
Mounting: SMD
Kind of channel: enhancement
товару немає в наявності
В кошику  од. на суму  грн.
IPI65R280C6XKSA1 IPI65R280C6-DTE.pdf
IPI65R280C6XKSA1
Виробник: INFINEON TECHNOLOGIES
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 650V; 13.8A; 104W; PG-TO262-3
Type of transistor: N-MOSFET
Technology: CoolMOS™
Polarisation: unipolar
Drain-source voltage: 650V
Drain current: 13.8A
Power dissipation: 104W
Case: PG-TO262-3
Gate-source voltage: ±20V
On-state resistance: 0.28Ω
Mounting: THT
Kind of channel: enhancement
товару немає в наявності
В кошику  од. на суму  грн.
IPA65R190E6XKSA1 IPA65R190E6-DTE.pdf
IPA65R190E6XKSA1
Виробник: INFINEON TECHNOLOGIES
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 650V; 20.2A; 34W; TO220FP
Type of transistor: N-MOSFET
Technology: CoolMOS™
Polarisation: unipolar
Drain-source voltage: 650V
Drain current: 20.2A
Power dissipation: 34W
Case: TO220FP
Gate-source voltage: ±20V
On-state resistance: 0.19Ω
Mounting: THT
Kind of package: tube
Kind of channel: enhancement
на замовлення 120 шт:
термін постачання 21-30 дні (днів)
Кількість Ціна
2+241.23 грн
7+151.37 грн
17+142.96 грн
100+137.61 грн
Мінімальне замовлення: 2
В кошику  од. на суму  грн.
IPA65R190C7XKSA1 IPA65R190C7-DTE.pdf
IPA65R190C7XKSA1
Виробник: INFINEON TECHNOLOGIES
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 650V; 8A; 30W; TO220FP
Type of transistor: N-MOSFET
Technology: CoolMOS™
Polarisation: unipolar
Drain-source voltage: 650V
Drain current: 8A
Power dissipation: 30W
Case: TO220FP
Gate-source voltage: ±20V
On-state resistance: 0.19Ω
Mounting: THT
Kind of package: tube
Kind of channel: enhancement
товару немає в наявності
В кошику  од. на суму  грн.
IPA65R190CFDXKSA1 IPA65R190CFD-DTE.pdf
IPA65R190CFDXKSA1
Виробник: INFINEON TECHNOLOGIES
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 650V; 17.5A; 34W; TO220FP
Type of transistor: N-MOSFET
Technology: CoolMOS™
Polarisation: unipolar
Drain-source voltage: 650V
Drain current: 17.5A
Power dissipation: 34W
Case: TO220FP
Gate-source voltage: ±20V
On-state resistance: 0.19Ω
Mounting: THT
Kind of package: tube
Kind of channel: enhancement
товару немає в наявності
В кошику  од. на суму  грн.
IPA65R310CFDXKSA1 IPA65R310CFD-DTE.pdf
IPA65R310CFDXKSA1
Виробник: INFINEON TECHNOLOGIES
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 650V; 11.4A; 32W; TO220FP
Type of transistor: N-MOSFET
Technology: CoolMOS™
Polarisation: unipolar
Drain-source voltage: 650V
Drain current: 11.4A
Power dissipation: 32W
Case: TO220FP
Gate-source voltage: ±20V
On-state resistance: 0.31Ω
Mounting: THT
Kind of package: tube
Kind of channel: enhancement
товару немає в наявності
В кошику  од. на суму  грн.
BSZ100N06LS3GATMA1 BSZ100N06LS3G-DTE.pdf
BSZ100N06LS3GATMA1
Виробник: INFINEON TECHNOLOGIES
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 60V; 20A; 50W; PG-TSDSON-8
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 60V
Drain current: 20A
Power dissipation: 50W
Case: PG-TSDSON-8
Gate-source voltage: ±20V
On-state resistance: 10mΩ
Mounting: SMD
Kind of channel: enhancement
Technology: OptiMOS™ 3
товару немає в наявності
В кошику  од. на суму  грн.
IRFS4610TRLPBF irfs4410pbf.pdf
IRFS4610TRLPBF
Виробник: INFINEON TECHNOLOGIES
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 100V; 73A; 190W; D2PAK
Type of transistor: N-MOSFET
Technology: HEXFET®
Polarisation: unipolar
Drain-source voltage: 100V
Drain current: 73A
Power dissipation: 190W
Case: D2PAK
Mounting: SMD
Kind of package: reel
Kind of channel: enhancement
товару немає в наявності
В кошику  од. на суму  грн.
IDH16G65C6XKSA1 IDH16G65C6.pdf
IDH16G65C6XKSA1
Виробник: INFINEON TECHNOLOGIES
Category: THT Schottky diodes
Description: Diode: Schottky rectifying; SiC; THT; 650V; 16A; PG-TO220-2; 97W
Case: PG-TO220-2
Max. off-state voltage: 650V
Max. forward voltage: 1.25V
Load current: 16A
Semiconductor structure: single diode
Max. forward impulse current: 65A
Leakage current: 123µA
Power dissipation: 97W
Kind of package: tube
Type of diode: Schottky rectifying
Technology: CoolSiC™ 5G; SiC
Heatsink thickness: 1.17...1.37mm
Mounting: THT
товару немає в наявності
В кошику  од. на суму  грн.
IPL60R075CFD7 IPL60R075CFD7.pdf
IPL60R075CFD7
Виробник: INFINEON TECHNOLOGIES
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 600V; 21A; 189W; PG-VSON-4
Mounting: SMD
Drain-source voltage: 600V
Drain current: 21A
On-state resistance: 0.149Ω
Type of transistor: N-MOSFET
Power dissipation: 189W
Polarisation: unipolar
Gate charge: 67nC
Kind of channel: enhancement
Gate-source voltage: ±20V
Technology: OptiMOS™
Case: PG-VSON-4
товару немає в наявності
В кошику  од. на суму  грн.
IPW60R075CPFKSA1 IPW60R075CP-DTE.pdf
IPW60R075CPFKSA1
Виробник: INFINEON TECHNOLOGIES
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 600V; 39A; 313W; PG-TO247-3
Mounting: THT
Drain-source voltage: 600V
Drain current: 39A
On-state resistance: 75mΩ
Type of transistor: N-MOSFET
Power dissipation: 313W
Polarisation: unipolar
Kind of package: tube
Kind of channel: enhancement
Gate-source voltage: ±20V
Technology: CoolMOS™ CP
Case: PG-TO247-3
товару немає в наявності
В кошику  од. на суму  грн.
BCR602XTSA1 Infineon-BCR602-DS-v01_01-EN.pdf?fileId=5546d46268554f4a016855acb7e80020
BCR602XTSA1
Виробник: INFINEON TECHNOLOGIES
Category: LED drivers
Description: IC: driver; current regulator,LED driver; PG-SOT23-6; 10mA; Ch: 1
Type of integrated circuit: driver
Kind of integrated circuit: current regulator; LED driver
Case: PG-SOT23-6
Integrated circuit features: linear dimming; PWM
Mounting: SMD
Operating voltage: 8...60V DC
Output current: 10mA
Number of channels: 1
Protection: overheating OTP
на замовлення 1586 шт:
термін постачання 21-30 дні (днів)
Кількість Ціна
10+45.28 грн
11+34.94 грн
35+26.30 грн
96+24.85 грн
250+23.93 грн
Мінімальне замовлення: 10
В кошику  од. на суму  грн.
BCR420U BCR420U.pdf
BCR420U
Виробник: INFINEON TECHNOLOGIES
Category: LED drivers
Description: IC: driver; single transistor; current regulator,LED driver
Type of integrated circuit: driver
Kind of integrated circuit: current regulator; LED driver
Case: SC74
Output current: 150...200mA
Number of channels: 1
Integrated circuit features: linear dimming
Mounting: SMD
Operating voltage: 1.4...40V DC
Topology: single transistor
на замовлення 465 шт:
термін постачання 21-30 дні (днів)
Кількість Ціна
25+17.95 грн
30+14.53 грн
75+12.69 грн
200+12.00 грн
Мінімальне замовлення: 25
В кошику  од. на суму  грн.
BCR402U bcr402u.pdf
BCR402U
Виробник: INFINEON TECHNOLOGIES
Category: LED drivers
Description: IC: driver; single transistor; current regulator,LED driver
Type of integrated circuit: driver
Kind of integrated circuit: current regulator; LED driver
Case: SC74
Output current: 20...65mA
Number of channels: 1
Integrated circuit features: linear dimming
Mounting: SMD
Operating voltage: 1.4...40V DC
Topology: single transistor
на замовлення 140 шт:
термін постачання 21-30 дні (днів)
Кількість Ціна
20+25.03 грн
25+20.87 грн
60+16.51 грн
Мінімальне замовлення: 20
В кошику  од. на суму  грн.
BCR402RE6327 BCR402R.pdf
BCR402RE6327
Виробник: INFINEON TECHNOLOGIES
Category: LED drivers
Description: IC: driver; single transistor; current regulator,LED driver
Type of integrated circuit: driver
Kind of integrated circuit: current regulator; LED driver
Case: SOT143R
Output current: 20...60mA
Number of channels: 1
Integrated circuit features: linear dimming
Mounting: SMD
Operating voltage: 1.2...18V DC
Topology: single transistor
на замовлення 1770 шт:
термін постачання 21-30 дні (днів)
Кількість Ціна
18+23.88 грн
25+16.82 грн
72+12.83 грн
197+12.13 грн
Мінімальне замовлення: 18
В кошику  од. на суму  грн.
BSO080P03SHXUMA1 BSO080P03SHXUMA1-DTE.PDF
BSO080P03SHXUMA1
Виробник: INFINEON TECHNOLOGIES
Category: SMD P channel transistors
Description: Transistor: P-MOSFET; unipolar; -30V; -12.6A; 1.79W; PG-DSO-8
Type of transistor: P-MOSFET
Polarisation: unipolar
Drain-source voltage: -30V
Drain current: -12.6A
Power dissipation: 1.79W
Case: PG-DSO-8
Gate-source voltage: ±25V
On-state resistance: 8mΩ
Mounting: SMD
Kind of channel: enhancement
Technology: OptiMOS™ P
товару немає в наявності
В кошику  од. на суму  грн.
BSP78 BSP78.pdf
BSP78
Виробник: INFINEON TECHNOLOGIES
Category: Power switches - integrated circuits
Description: IC: power switch; low-side; 3A; Ch: 1; N-Channel; SMD; SOT223-3
Type of integrated circuit: power switch
Kind of integrated circuit: low-side
Output current: 3A
Number of channels: 1
Kind of output: N-Channel
Mounting: SMD
Case: SOT223-3
On-state resistance: 35mΩ
Technology: HITFET®
Output voltage: 42V
на замовлення 2773 шт:
термін постачання 21-30 дні (днів)
Кількість Ціна
3+200.06 грн
10+121.55 грн
13+73.39 грн
34+69.57 грн
1000+68.04 грн
2000+67.28 грн
Мінімальне замовлення: 3
В кошику  од. на суму  грн.
BTS282ZE3230AKSA2 BTS282Z.pdf
BTS282ZE3230AKSA2
Виробник: INFINEON TECHNOLOGIES
Category: Power switches - integrated circuits
Description: IC: power switch; low-side; 36A; Ch: 1; N-Channel; THT; tube; 300W
Type of integrated circuit: power switch
Kind of integrated circuit: low-side
Output current: 36A
Number of channels: 1
Kind of output: N-Channel
Mounting: THT
Case: PG-TO220-7-12
On-state resistance: 6.5mΩ
Kind of package: tube
Technology: TEMPFET®
Operating temperature: -40...175°C
Output voltage: 49V
Power dissipation: 300W
Integrated circuit features: internal temperature sensor
на замовлення 10 шт:
термін постачання 21-30 дні (днів)
Кількість Ціна
1+519.50 грн
3+331.79 грн
8+314.20 грн
В кошику  од. на суму  грн.
BTS5120-2EKA BTS5120-2EKA.pdf
BTS5120-2EKA
Виробник: INFINEON TECHNOLOGIES
Category: Power switches - integrated circuits
Description: IC: power switch; high-side; 2A; Ch: 2; N-Channel; SMD; SO14
Output current: 2A
Type of integrated circuit: power switch
Number of channels: 2
Kind of output: N-Channel
Technology: PROFET™+ 12V
Kind of integrated circuit: high-side
Mounting: SMD
Case: SO14
Supply voltage: 8...18V DC
On-state resistance: 0.22Ω
на замовлення 1898 шт:
термін постачання 21-30 дні (днів)
Кількість Ціна
3+199.24 грн
10+120.79 грн
13+73.39 грн
34+69.57 грн
1000+67.28 грн
Мінімальне замовлення: 3
В кошику  од. на суму  грн.
BTS282ZE3180AATMA2 BTS282Z.pdf
BTS282ZE3180AATMA2
Виробник: INFINEON TECHNOLOGIES
Category: Power switches - integrated circuits
Description: IC: power switch; low-side; 36A; Ch: 1; N-Channel; SMD; PG-TO263-7-1
Operating temperature: -40...175°C
Case: PG-TO263-7-1
On-state resistance: 6.5mΩ
Output voltage: 49V
Output current: 36A
Type of integrated circuit: power switch
Number of channels: 1
Kind of output: N-Channel
Power dissipation: 300W
Integrated circuit features: internal temperature sensor
Kind of package: reel; tape
Technology: TEMPFET®
Kind of integrated circuit: low-side
Mounting: SMD
на замовлення 87 шт:
термін постачання 21-30 дні (днів)
Кількість Ціна
1+493.98 грн
3+316.50 грн
8+298.92 грн
В кошику  од. на суму  грн.
BFN26E6327 BFN26.pdf
BFN26E6327
Виробник: INFINEON TECHNOLOGIES
Category: NPN SMD transistors
Description: Transistor: NPN; bipolar; 300V; 0.2A; 0.36W; SOT23
Type of transistor: NPN
Polarisation: bipolar
Collector-emitter voltage: 300V
Collector current: 0.2A
Power dissipation: 0.36W
Case: SOT23
Mounting: SMD
Frequency: 70MHz
на замовлення 1541 шт:
термін постачання 21-30 дні (днів)
Кількість Ціна
41+10.13 грн
65+5.89 грн
192+4.70 грн
528+4.44 грн
Мінімальне замовлення: 41
В кошику  од. на суму  грн.
IPW60R037P7XKSA1 IPW60R037P7.pdf
IPW60R037P7XKSA1
Виробник: INFINEON TECHNOLOGIES
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 600V; 48A; 255W; PG-TO247-3; ESD
Type of transistor: N-MOSFET
Technology: CoolMOS™ P7
Polarisation: unipolar
Drain-source voltage: 600V
Drain current: 48A
Power dissipation: 255W
Case: PG-TO247-3
Gate-source voltage: ±20V
On-state resistance: 37mΩ
Mounting: THT
Gate charge: 121nC
Kind of package: tube
Kind of channel: enhancement
Version: ESD
товару немає в наявності
В кошику  од. на суму  грн.
IRFP4368PBF description irfp4368pbf.pdf
IRFP4368PBF
Виробник: INFINEON TECHNOLOGIES
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 75V; 350A; 520W; TO247AC
Type of transistor: N-MOSFET
Technology: HEXFET®
Polarisation: unipolar
Drain-source voltage: 75V
Drain current: 350A
Power dissipation: 520W
Case: TO247AC
Gate-source voltage: ±20V
On-state resistance: 1.8mΩ
Mounting: THT
Gate charge: 380nC
Kind of package: tube
Kind of channel: enhancement
товару немає в наявності
В кошику  од. на суму  грн.
IRFP4368PBFXKMA1 Infineon-IRFP4368-DataSheet-v01_01-EN.pdf?fileId=5546d462533600a40153562c61512015
IRFP4368PBFXKMA1
Виробник: INFINEON TECHNOLOGIES
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 75V; 350A; 520W; TO247AC
Type of transistor: N-MOSFET
Technology: HEXFET®
Polarisation: unipolar
Drain-source voltage: 75V
Drain current: 350A
Power dissipation: 520W
Case: TO247AC
Gate-source voltage: ±20V
On-state resistance: 1.8mΩ
Mounting: THT
Gate charge: 380nC
Kind of package: tube
Kind of channel: enhancement
на замовлення 14 шт:
термін постачання 21-30 дні (днів)
Кількість Ціна
1+559.02 грн
4+300.44 грн
9+284.39 грн
В кошику  од. на суму  грн.
CY62137EV30LL-45ZSXIT Infineon-CY62137EV30_MoBL_2-Mbit_(128_K_16)_Static_RAM-DataSheet-v10_00-EN.pdf?fileId=8ac78c8c7d0d8da4017d0ebe8fb93241&utm_source=cypress&utm_medium=referral&utm_campaign=202110_globe_en_all_integration-files
Виробник: INFINEON TECHNOLOGIES
Category: Parallel SRAM memories - integ. circ.
Description: IC: SRAM memory; 2MbSRAM; 128kx16bit; 45ns; TSOP44 II; parallel
Operating temperature: -40...85°C
Case: TSOP44 II
Supply voltage: 2.2...3.6V DC
Type of integrated circuit: SRAM memory
Kind of memory: SRAM
Memory organisation: 128kx16bit
Access time: 45ns
Kind of package: reel; tape
Kind of interface: parallel
Memory: 2Mb SRAM
Mounting: SMD
товару немає в наявності
В кошику  од. на суму  грн.
CY62137FV18LL-55BVXIT Infineon-CY62137FV18_MoBL(R)_2-Mbit_(128_K_x_16)_Static_RAM-DataSheet-v14_00-EN.pdf?fileId=8ac78c8c7d0d8da4017d0ebe93e13249
Виробник: INFINEON TECHNOLOGIES
Category: Parallel SRAM memories - integ. circ.
Description: IC: SRAM memory; 2MbSRAM; 128kx16bit; 55ns; VFBGA48; parallel
Operating temperature: -40...85°C
Case: VFBGA48
Supply voltage: 1.65...2.25V DC
Type of integrated circuit: SRAM memory
Kind of memory: SRAM
Memory organisation: 128kx16bit
Access time: 55ns
Kind of package: reel; tape
Kind of interface: parallel
Memory: 2Mb SRAM
Mounting: SMD
товару немає в наявності
В кошику  од. на суму  грн.
CY62137FV30LL-45BVXIT Infineon-CY62137FV30_MoBL_2-Mbit_(128_K_16)_Static_RAM-DataSheet-v17_00-EN.pdf?fileId=8ac78c8c7d0d8da4017d0ebe9762324f
Виробник: INFINEON TECHNOLOGIES
Category: Parallel SRAM memories - integ. circ.
Description: IC: SRAM memory; 2MbSRAM; 128kx16bit; 45ns; VFBGA48; parallel
Operating temperature: -40...85°C
Case: VFBGA48
Supply voltage: 2.2...3.6V DC
Type of integrated circuit: SRAM memory
Kind of memory: SRAM
Memory organisation: 128kx16bit
Access time: 45ns
Kind of package: reel; tape
Kind of interface: parallel
Memory: 2Mb SRAM
Mounting: SMD
товару немає в наявності
В кошику  од. на суму  грн.
CY62137FV30LL-45ZSXIT Infineon-CY62137FV30_MoBL_2-Mbit_(128_K_16)_Static_RAM-DataSheet-v17_00-EN.pdf?fileId=8ac78c8c7d0d8da4017d0ebe9762324f
Виробник: INFINEON TECHNOLOGIES
Category: Parallel SRAM memories - integ. circ.
Description: IC: SRAM memory; 2MbSRAM; 128kx16bit; 45ns; TSOP44 II; parallel
Operating temperature: -40...85°C
Case: TSOP44 II
Supply voltage: 2.2...3.6V DC
Type of integrated circuit: SRAM memory
Kind of memory: SRAM
Memory organisation: 128kx16bit
Access time: 45ns
Kind of package: reel; tape
Kind of interface: parallel
Memory: 2Mb SRAM
Mounting: SMD
товару немає в наявності
В кошику  од. на суму  грн.
CY62137FV30LL-55ZSXET download
Виробник: INFINEON TECHNOLOGIES
Category: Parallel SRAM memories - integ. circ.
Description: IC: SRAM memory; 2MbSRAM; 128kx16bit; 55ns; TSOP44 II; parallel
Operating temperature: -40...125°C
Case: TSOP44 II
Supply voltage: 2.2...3.6V DC
Type of integrated circuit: SRAM memory
Kind of memory: SRAM
Memory organisation: 128kx16bit
Access time: 55ns
Kind of package: reel; tape
Kind of interface: parallel
Memory: 2Mb SRAM
Mounting: SMD
товару немає в наявності
В кошику  од. на суму  грн.
Обрати Сторінку:   [  << Попередня Сторінка ]  1 247 494 741 988 1235 1482 1729 1976 2223 2457 2458 2459 2460 2461 2462 2463 2464 2465 2466 2467 2470 2474  [ Наступна Сторінка >> ]