Продукція > INFINEON TECHNOLOGIES > Всі товари виробника INFINEON TECHNOLOGIES (119486) > Сторінка 762 з 1992

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CY8C624ABZI-S2D04T CY8C624ABZI-S2D04T Infineon Technologies PdfFile_108807.pdf Description: IC MCU 32BIT 2MB FLASH 124VFBGA
Packaging: Tape & Reel (TR)
Package / Case: 124-VFBGA
Mounting Type: Surface Mount
Speed: 100MHz, 150MHz
Program Memory Size: 2MB (2M x 8)
RAM Size: 1M x 8
Operating Temperature: -40°C ~ 85°C (TA)
Oscillator Type: External, Internal
Program Memory Type: FLASH
EEPROM Size: 32K x 8
Core Processor: ARM® Cortex®-M0+, ARM® Cortex®-M4F
Data Converters: A/D 16x10/12b SAR ; D/A 2x7/8b Sigma-Delta
Core Size: 32-Bit Dual-Core
Voltage - Supply (Vcc/Vdd): 1.7V ~ 3.6V
Connectivity: eMMC/SD/SDIO, FIFO, I2C, IrDA, LINbus, Microwire, PCM, PDM, SmartCard, SPI, SSP, UART/USART, USB
Peripherals: Brown-out Detect/Reset, DMA, I2S, LCD, LVD, POR, PWM, Temp Sensor, WDT
Supplier Device Package: 124-VFBGA (9x9)
Number of I/O: 100
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CY8C624ABZI-S2D14T CY8C624ABZI-S2D14T Infineon Technologies PdfFile_108807.pdf Description: IC MCU 32BIT 2MB FLASH 124VFBGA
Packaging: Tape & Reel (TR)
Package / Case: 124-VFBGA
Mounting Type: Surface Mount
Speed: 100MHz, 150MHz
Program Memory Size: 2MB (2M x 8)
RAM Size: 1M x 8
Operating Temperature: -40°C ~ 85°C (TA)
Oscillator Type: External, Internal
Program Memory Type: FLASH
EEPROM Size: 32K x 8
Core Processor: ARM® Cortex®-M0+, ARM® Cortex®-M4F
Data Converters: A/D 16x10/12b SAR ; D/A 2x7/8b Sigma-Delta
Core Size: 32-Bit Dual-Core
Voltage - Supply (Vcc/Vdd): 1.7V ~ 3.6V
Connectivity: eMMC/SD/SDIO, FIFO, I2C, IrDA, LINbus, Microwire, PCM, PDM, SmartCard, SPI, SSP, UART/USART, USB
Peripherals: Brown-out Detect/Reset, CapSense, DMA, I2S, LCD, LVD, POR, PWM, Temp Sensor, WDT
Supplier Device Package: 124-VFBGA (9x9)
Number of I/O: 100
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CY8C614ABZI-S2F44T CY8C614ABZI-S2F44T Infineon Technologies Description: IC MCU 32BIT 2MB FLASH 124VFBGA
Packaging: Tape & Reel (TR)
Package / Case: 124-VFBGA
Mounting Type: Surface Mount
Speed: 150MHz
Program Memory Size: 2MB (2M x 8)
RAM Size: 1M x 8
Operating Temperature: -40°C ~ 85°C (TA)
Oscillator Type: External, Internal
Program Memory Type: FLASH
Core Processor: ARM® Cortex®-M4F
Data Converters: A/D 16x10/12b SAR ; D/A 2x7/8b Sigma-Delta
Core Size: 32-Bit
Voltage - Supply (Vcc/Vdd): 1.7V ~ 3.6V
Connectivity: eMMC/SD/SDIO, FIFO, I2C, IrDA, LINbus, Microwire, QSPI, SmartCard, SPI, SSP, UART/USART, USB
Peripherals: Brown-out Detect/Reset, CapSense, Crypto - AES, DMA, LCD, LVD, PMC, POR, PWM, RSA, SHA, Temp Sensor, TRNG, WDT
Supplier Device Package: 124-VFBGA (9x9)
Number of I/O: 100
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CY8C614ABZI-S2F44 CY8C614ABZI-S2F44 Infineon Technologies Infineon-PSoC_6_MCU_CY8C61x8_CY8C61xA-DataSheet-v04_00-EN.pdf?fileId=8ac78c8c7d0d8da4017d0eea1f6b72fa Description: IC MCU 32BIT 2MB FLASH 124VFBGA
Packaging: Tray
Package / Case: 124-VFBGA
Mounting Type: Surface Mount
Speed: 100MHz, 150MHz
Program Memory Size: 2MB (2M x 8)
RAM Size: 1M x 8
Operating Temperature: -40°C ~ 85°C (TA)
Oscillator Type: External, Internal
Program Memory Type: FLASH
Core Processor: ARM® Cortex®-M0+, ARM® Cortex®-M4F
Data Converters: A/D 16x8b, 16x10/12b SAR, Sigma-Delta; D/A 2x7/8b
Core Size: 32-Bit Dual-Core
Voltage - Supply (Vcc/Vdd): 1.7V ~ 3.6V
Connectivity: eMMC/SD/SDIO, I2C, IrDA, LINbus, Microwire, QSPI, SmartCard, SPI, SSP, UART/USART, USB
Peripherals: Brown-out Detect/Reset, CapSense, DMA, I2S, LCD, LVD, POR, PWM, Temp Sensor, WDT
Supplier Device Package: 124-VFBGA (9x9)
Number of I/O: 100
DigiKey Programmable: Not Verified
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IPAN80R280P7XKSA1 IPAN80R280P7XKSA1 Infineon Technologies infineon-ipan80r280p7-ds-en.pdf Description: MOSFET N-CH 800V 17A TO220
Packaging: Bulk
Package / Case: TO-220-3 Full Pack
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 17A (Tc)
Rds On (Max) @ Id, Vgs: 280mOhm @ 7.2A, 10V
Power Dissipation (Max): 30W (Tc)
Vgs(th) (Max) @ Id: 3.5V @ 360µA
Supplier Device Package: PG-TO220-3-FP
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 800 V
Gate Charge (Qg) (Max) @ Vgs: 36 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 1200 pF @ 500 V
на замовлення 16881 шт:
термін постачання 21-31 дні (днів)
198+101.35 грн
Мінімальне замовлення: 198
В кошику  од. на суму  грн.
CYW43012C0WKWBGT CYW43012C0WKWBGT Infineon Technologies infineon-cyw43012-product-overview-productbrief-en.pdf?fileId=8ac78c8c7d0d8da4017d0f662eb353fe Description: RF TXRX MODULE BLUETOOTH SMD
Packaging: Cut Tape (CT)
Package / Case: 24-VBGA
Mounting Type: Surface Mount
Frequency: 2.4GHz, 5GHz
Data Rate: 78Mbps
Protocol: 802.11a/b/g/n, Bluetooth v5.0
Antenna Type: Antenna Not Included
RF Family/Standard: Bluetooth
Serial Interfaces: UART
на замовлення 5000 шт:
термін постачання 21-31 дні (днів)
1+614.13 грн
10+513.26 грн
25+486.04 грн
100+421.10 грн
250+400.12 грн
500+385.32 грн
1000+365.28 грн
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FZ1500R33HL3NPSA1 Infineon Technologies FZ1500R33HL3.pdf?t.download=true&u=ovmfp3 Description: FZ1500R33 - INSULATED GATE BIPOL
Packaging: Bulk
на замовлення 8 шт:
термін постачання 21-31 дні (днів)
1+104052.62 грн
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FD300R17KE4HPSA1 FD300R17KE4HPSA1 Infineon Technologies Infineon-FD300R17KE4-DataSheet-v01_00-EN.pdf?fileId=8ac78c8c956a0a4701957a5417a47ff1 Description: MEDIUM POWER 62MM
Packaging: Tray
Package / Case: Module
Mounting Type: Chassis Mount
Input: Standard
Configuration: Single
Operating Temperature: -40°C ~ 150°C (TJ)
Vce(on) (Max) @ Vge, Ic: 2.3V @ 15V, 300A
NTC Thermistor: No
IGBT Type: Trench Field Stop
Current - Collector (Ic) (Max): 300 A
Voltage - Collector Emitter Breakdown (Max): 1700 V
Current - Collector Cutoff (Max): 1 mA
Input Capacitance (Cies) @ Vce: 24.5 nF @ 25 V
на замовлення 28 шт:
термін постачання 21-31 дні (днів)
1+8998.39 грн
10+7579.83 грн
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IGT65R055D2ATMA1 IGT65R055D2ATMA1 Infineon Technologies Infineon-IGT65R055D2-DataSheet-v01_00-EN.pdf?fileId=8ac78c8c8eeb092c018f0a5e99970a26 Description: IGT65R055D2ATMA1
Packaging: Tape & Reel (TR)
Package / Case: 8-PowerSFN
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: GaNFET (Gallium Nitride)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 31A (Tc)
Power Dissipation (Max): 106W (Tc)
Vgs(th) (Max) @ Id: 1.6V @ 2.6mA
Supplier Device Package: PG-HSOF-8-3
Vgs (Max): -10V
Drain to Source Voltage (Vdss): 650 V
Gate Charge (Qg) (Max) @ Vgs: 4.7 nC @ 3 V
Input Capacitance (Ciss) (Max) @ Vds: 340 pF @ 400 V
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IGT65R055D2ATMA1 IGT65R055D2ATMA1 Infineon Technologies Infineon-IGT65R055D2-DataSheet-v01_00-EN.pdf?fileId=8ac78c8c8eeb092c018f0a5e99970a26 Description: IGT65R055D2ATMA1
Packaging: Cut Tape (CT)
Package / Case: 8-PowerSFN
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: GaNFET (Gallium Nitride)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 31A (Tc)
Power Dissipation (Max): 106W (Tc)
Vgs(th) (Max) @ Id: 1.6V @ 2.6mA
Supplier Device Package: PG-HSOF-8-3
Vgs (Max): -10V
Drain to Source Voltage (Vdss): 650 V
Gate Charge (Qg) (Max) @ Vgs: 4.7 nC @ 3 V
Input Capacitance (Ciss) (Max) @ Vds: 340 pF @ 400 V
на замовлення 485 шт:
термін постачання 21-31 дні (днів)
1+452.19 грн
10+293.13 грн
100+215.22 грн
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IRF630NPBFAKMA1 IRF630NPBFAKMA1 Infineon Technologies Infineon-IRF630N-DataSheet-v01_00-EN.pdf Description: PLANAR 40<-<100V
Packaging: Tube
Package / Case: TO-220-3
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 9.3A (Tc)
Rds On (Max) @ Id, Vgs: 300mOhm @ 5.4A, 10V
Power Dissipation (Max): 82W (Tc)
Vgs(th) (Max) @ Id: 4V @ 250µA
Supplier Device Package: TO-220AB
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 200 V
Gate Charge (Qg) (Max) @ Vgs: 35 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 575 pF @ 25 V
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SHIELDBTS70082EPZTOBO1 Infineon Technologies infineon-profet-2-12v-grade0-productbrief-en.pdf Description: SHIELD_BTS7008-2EPZ
Packaging: Box
Function: Switch
Type: Power Management
Contents: Board(s)
Utilized IC / Part: BTS7008-2EPZ
на замовлення 1 шт:
термін постачання 21-31 дні (днів)
1+6688.95 грн
В кошику  од. на суму  грн.
SHIELDBTS70401EPZTOBO1 Infineon Technologies infineon-profet-2-12v-grade0-productbrief-en.pdf Description: SHIELD_BTS7040-1EPZ
Packaging: Box
Function: Switch
Type: Power Management
Contents: Board(s)
Utilized IC / Part: BTS7040-1EPZ
на замовлення 1 шт:
термін постачання 21-31 дні (днів)
1+7107.49 грн
В кошику  од. на суму  грн.
IPW65R060CM8XKSA1 IPW65R060CM8XKSA1 Infineon Technologies Infineon-IPW65R060CM8-DataSheet-v02_01-EN.pdf?fileId=8ac78c8c96250806019626d9c55260d5 Description: IPW65R060CM8XKSA1
Packaging: Tube
Package / Case: TO-247-3
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 45A (Tc)
Rds On (Max) @ Id, Vgs: 60mOhm @ 16.7A, 10V
Power Dissipation (Max): 227W (Tc)
Vgs(th) (Max) @ Id: 4.7V @ 440µA
Supplier Device Package: PG-TO247-3-U06
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 650 V
Gate Charge (Qg) (Max) @ Vgs: 52 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 2462 pF @ 400 V
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TDB6HK180N16RRPB11BPSA1 TDB6HK180N16RRPB11BPSA1 Infineon Technologies Infineon-TDB6HK180N16RR-DS-v02_00-en_cn.pdf?fileId=db3a304340f610c201410c3f12e4330c Description: SCR MODULE 1.6KV MODULE
Packaging: Tray
Package / Case: Module
Mounting Type: Chassis Mount
Operating Temperature: 175°C (TJ)
Structure: Bridge, 3-Phase - SCRs/Diodes - IGBT with Diode
Current - Hold (Ih) (Max): 220 mA
Current - Gate Trigger (Igt) (Max): 100 mA
Current - Non Rep. Surge 50, 60Hz (Itsm): 1600A @ 50Hz
Number of SCRs, Diodes: 3 SCRs, 3 Diodes
Voltage - Gate Trigger (Vgt) (Max): 2 V
Voltage - Off State: 1.6 kV
на замовлення 20 шт:
термін постачання 21-31 дні (днів)
1+6650.61 грн
10+5291.58 грн
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CYW20829B0P4TAI200XUMA1 Infineon Technologies Description: BLE INDUSTRIAL AND IOT
Packaging: Tape & Reel (TR)
товару немає в наявності
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FS100R12W2T7B11ABPSA2 FS100R12W2T7B11ABPSA2 Infineon Technologies Infineon-FS100R12W2T7_B11-DataSheet-v01_00-EN.pdf?fileId=5546d46267c74c9a01683d5d7ab56640 Description: IGBT MODULE 1200V 100A
Packaging: Tray
Package / Case: Module
Mounting Type: Chassis Mount
Input: Standard
Configuration: Three Phase Inverter
Operating Temperature: -40°C ~ 150°C (TJ)
Vce(on) (Max) @ Vge, Ic: 1.8V @ 15V, 100A
NTC Thermistor: Yes
IGBT Type: Trench Field Stop
Current - Collector (Ic) (Max): 100 A
Voltage - Collector Emitter Breakdown (Max): 1200 V
Current - Collector Cutoff (Max): 8 µA
Input Capacitance (Cies) @ Vce: 21700 pF @ 25 V
на замовлення 29 шт:
термін постачання 21-31 дні (днів)
1+4647.06 грн
15+3442.64 грн
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IMCQ120R026M2HXTMA1 IMCQ120R026M2HXTMA1 Infineon Technologies DS_IMCQ120R026M2H_v1.00_en.pdf Description: SICFET N-CH 1200V 82A 22PWRBSOP
Packaging: Tape & Reel (TR)
Package / Case: 22-PowerBSOP Module
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: SiCFET (Silicon Carbide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 82A (Tc)
Rds On (Max) @ Id, Vgs: 25.4mOhm @ 27A, 18V
Power Dissipation (Max): 405W (Tc)
Vgs(th) (Max) @ Id: 5.1V @ 8.6mA
Supplier Device Package: PG-HDSOP-22-3
Drive Voltage (Max Rds On, Min Rds On): 15V, 18V
Vgs (Max): +23V, -7V
Drain to Source Voltage (Vdss): 1200 V
Gate Charge (Qg) (Max) @ Vgs: 63.4 nC @ 18 V
Input Capacitance (Ciss) (Max) @ Vds: 2540 pF @ 800 V
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IMCQ120R026M2HXTMA1 IMCQ120R026M2HXTMA1 Infineon Technologies DS_IMCQ120R026M2H_v1.00_en.pdf Description: SICFET N-CH 1200V 82A 22PWRBSOP
Packaging: Cut Tape (CT)
Package / Case: 22-PowerBSOP Module
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: SiCFET (Silicon Carbide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 82A (Tc)
Rds On (Max) @ Id, Vgs: 25.4mOhm @ 27A, 18V
Power Dissipation (Max): 405W (Tc)
Vgs(th) (Max) @ Id: 5.1V @ 8.6mA
Supplier Device Package: PG-HDSOP-22-3
Drive Voltage (Max Rds On, Min Rds On): 15V, 18V
Vgs (Max): +23V, -7V
Drain to Source Voltage (Vdss): 1200 V
Gate Charge (Qg) (Max) @ Vgs: 63.4 nC @ 18 V
Input Capacitance (Ciss) (Max) @ Vds: 2540 pF @ 800 V
на замовлення 374 шт:
термін постачання 21-31 дні (днів)
1+963.83 грн
10+649.47 грн
100+534.20 грн
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ISC011N04NM7VATMA1 ISC011N04NM7VATMA1 Infineon Technologies 448_ISC011N04NM7V.pdf Description: ISC011N04NM7VATMA1
Packaging: Tape & Reel (TR)
Package / Case: 8-PowerTDFN
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 38A (Ta), 256A (Tc)
Rds On (Max) @ Id, Vgs: 1.05mOhm @ 50A, 15V
Power Dissipation (Max): 3W (Ta), 136W (Tc)
Vgs(th) (Max) @ Id: 3.15V @ 56µA
Supplier Device Package: PG-TDSON-8
Drive Voltage (Max Rds On, Min Rds On): 10V, 15V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 40 V
Gate Charge (Qg) (Max) @ Vgs: 73 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 3800 pF @ 20 V
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ISC011N04NM7VATMA1 ISC011N04NM7VATMA1 Infineon Technologies 448_ISC011N04NM7V.pdf Description: ISC011N04NM7VATMA1
Packaging: Cut Tape (CT)
Package / Case: 8-PowerTDFN
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 38A (Ta), 256A (Tc)
Rds On (Max) @ Id, Vgs: 1.05mOhm @ 50A, 15V
Power Dissipation (Max): 3W (Ta), 136W (Tc)
Vgs(th) (Max) @ Id: 3.15V @ 56µA
Supplier Device Package: PG-TDSON-8
Drive Voltage (Max Rds On, Min Rds On): 10V, 15V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 40 V
Gate Charge (Qg) (Max) @ Vgs: 73 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 3800 pF @ 20 V
на замовлення 4799 шт:
термін постачання 21-31 дні (днів)
2+158.81 грн
10+98.01 грн
100+66.62 грн
500+49.90 грн
1000+45.84 грн
2000+44.96 грн
Мінімальне замовлення: 2
В кошику  од. на суму  грн.
BDP954H6327XTSA1 BDP954H6327XTSA1 Infineon Technologies Infineon-BDP948_BDP950_BDP954-DS-v01_01-en.pdf?fileId=db3a304314dca38901156149b3e81f67 Description: TRANS PNP 100V 3A PG-SOT223-4
Packaging: Bulk
Package / Case: TO-261-4, TO-261AA
Mounting Type: Surface Mount
Transistor Type: PNP
Operating Temperature: 150°C (TJ)
Vce Saturation (Max) @ Ib, Ic: 500mV @ 200mA, 2A
Current - Collector Cutoff (Max): 100nA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce: 85 @ 500mA, 1V
Frequency - Transition: 100MHz
Supplier Device Package: PG-SOT223-4
Current - Collector (Ic) (Max): 3 A
Voltage - Collector Emitter Breakdown (Max): 100 V
Power - Max: 5 W
на замовлення 18500 шт:
термін постачання 21-31 дні (днів)
980+20.61 грн
Мінімальне замовлення: 980
В кошику  од. на суму  грн.
IR3899AMTRPBFXUMA1 IR3899AMTRPBFXUMA1 Infineon Technologies Infineon-IR3899AMTRPBF-DataSheet-v02_30-EN.pdf?fileId=5546d46276fb756a0177072216135f1f Description: IC REG BUCK ADJ 9A 19IQFN
Packaging: Cut Tape (CT)
Package / Case: 19-PowerVFQFN
Output Type: Adjustable
Mounting Type: Surface Mount
Number of Outputs: 1
Function: Step-Down
Current - Output: 9A
Operating Temperature: -40°C ~ 125°C (TJ)
Output Configuration: Positive
Frequency - Switching: 600kHz ~ 2MHz
Voltage - Input (Max): 17V
Topology: Buck
Supplier Device Package: PG-IQFN-19-900
Synchronous Rectifier: Yes
Voltage - Output (Max): 6V
Voltage - Input (Min): 4.5V
Voltage - Output (Min/Fixed): 0.6V
на замовлення 3630 шт:
термін постачання 21-31 дні (днів)
2+165.07 грн
10+118.13 грн
25+107.88 грн
100+90.69 грн
250+85.66 грн
500+82.63 грн
1000+78.82 грн
Мінімальне замовлення: 2
В кошику  од. на суму  грн.
IQFH39N04NM6ATMA1 IQFH39N04NM6ATMA1 Infineon Technologies Infineon-IQFH39N04NM6-DataSheet-v02_00-EN.pdf?fileId=8ac78c8c8eeb092c018f09d4297e4a4f Description: TRENCH <= 40V
Packaging: Tape & Reel (TR)
Package / Case: 12-PowerTDFN
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 63A (Ta), 600A (Tc)
Rds On (Max) @ Id, Vgs: 0.39mOhm @ 100A, 10V
Power Dissipation (Max): 3W (Ta), 273W (Tc)
Vgs(th) (Max) @ Id: 2.8V @ 1.05mA
Supplier Device Package: PG-TSON-12-1
Drive Voltage (Max Rds On, Min Rds On): 6V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 40 V
Gate Charge (Qg) (Max) @ Vgs: 273 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 16400 pF @ 20 V
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IQFH39N04NM6ATMA1 IQFH39N04NM6ATMA1 Infineon Technologies Infineon-IQFH39N04NM6-DataSheet-v02_00-EN.pdf?fileId=8ac78c8c8eeb092c018f09d4297e4a4f Description: TRENCH <= 40V
Packaging: Cut Tape (CT)
Package / Case: 12-PowerTDFN
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 63A (Ta), 600A (Tc)
Rds On (Max) @ Id, Vgs: 0.39mOhm @ 100A, 10V
Power Dissipation (Max): 3W (Ta), 273W (Tc)
Vgs(th) (Max) @ Id: 2.8V @ 1.05mA
Supplier Device Package: PG-TSON-12-1
Drive Voltage (Max Rds On, Min Rds On): 6V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 40 V
Gate Charge (Qg) (Max) @ Vgs: 273 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 16400 pF @ 20 V
на замовлення 2996 шт:
термін постачання 21-31 дні (днів)
1+418.55 грн
10+286.73 грн
100+210.07 грн
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SAF-XC866-4FRA BC SAF-XC866-4FRA BC Infineon Technologies Infineon-XC866-DS-v01_02-en.pdf?folderId=db3a304412b407950112b408e8c90004&fileId=db3a304412b407950112b4198e7528a5&ack=t Description: IC MCU 8BIT 16KB FLASH 38TSSOP
Packaging: Tape & Reel (TR)
Package / Case: 38-TFSOP (0.173", 4.40mm Width)
Mounting Type: Surface Mount
Speed: 86MHz
Program Memory Size: 16KB (16K x 8)
RAM Size: 768 x 8
Operating Temperature: -40°C ~ 85°C (TA)
Oscillator Type: Internal
Program Memory Type: FLASH
Core Processor: XC800
Data Converters: A/D 8x10b
Core Size: 8-Bit
Voltage - Supply (Vcc/Vdd): 4.5V ~ 5.5V
Connectivity: SSI, UART/USART
Peripherals: Brown-out Detect/Reset, POR, PWM, WDT
Supplier Device Package: PG-TSSOP-38
Number of I/O: 19
DigiKey Programmable: Not Verified
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SPU02N60S5BKMA1 SPU02N60S5BKMA1 Infineon Technologies SPD_U02N60S5_Rev.2.4.pdf?folderId=db3a304412b407950112b408e8c90004&fileId=db3a304412b407950112b42c91374727 Description: MOSFET N-CH 600V 1.8A TO251-3
Packaging: Bulk
Package / Case: TO-251-3 Short Leads, IPak, TO-251AA
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 1.8A (Tc)
Rds On (Max) @ Id, Vgs: 3Ohm @ 1.1A, 10V
Power Dissipation (Max): 25W (Tc)
Vgs(th) (Max) @ Id: 5.5V @ 80µA
Supplier Device Package: PG-TO251-3-21
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 600 V
Gate Charge (Qg) (Max) @ Vgs: 9.5 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 240 pF @ 25 V
на замовлення 23717 шт:
термін постачання 21-31 дні (днів)
296+67.74 грн
Мінімальне замовлення: 296
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IMT65R033M2HXUMA1 IMT65R033M2HXUMA1 Infineon Technologies Infineon-IMT65R033M2H-DataSheet-v02_01-EN.pdf?fileId=8ac78c8c92bcf0b001934e2151653c8f Description: SILICON CARBIDE MOSFET
Packaging: Tape & Reel (TR)
Package / Case: 8-PowerSFN
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: SiCFET (Silicon Carbide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 68A (Tc)
Rds On (Max) @ Id, Vgs: 30mOhm @ 27.9A, 20V
Power Dissipation (Max): 312W (Tc)
Vgs(th) (Max) @ Id: 5.6V @ 5.7mA
Supplier Device Package: PG-HSOF-8-2
Drive Voltage (Max Rds On, Min Rds On): 15V, 20V
Vgs (Max): +23V, -7V
Drain to Source Voltage (Vdss): 650 V
Gate Charge (Qg) (Max) @ Vgs: 34 nC @ 18 V
Input Capacitance (Ciss) (Max) @ Vds: 1215 pF @ 400 V
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IMT65R033M2HXUMA1 IMT65R033M2HXUMA1 Infineon Technologies Infineon-IMT65R033M2H-DataSheet-v02_01-EN.pdf?fileId=8ac78c8c92bcf0b001934e2151653c8f Description: SILICON CARBIDE MOSFET
Packaging: Cut Tape (CT)
Package / Case: 8-PowerSFN
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: SiCFET (Silicon Carbide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 68A (Tc)
Rds On (Max) @ Id, Vgs: 30mOhm @ 27.9A, 20V
Power Dissipation (Max): 312W (Tc)
Vgs(th) (Max) @ Id: 5.6V @ 5.7mA
Supplier Device Package: PG-HSOF-8-2
Drive Voltage (Max Rds On, Min Rds On): 15V, 20V
Vgs (Max): +23V, -7V
Drain to Source Voltage (Vdss): 650 V
Gate Charge (Qg) (Max) @ Vgs: 34 nC @ 18 V
Input Capacitance (Ciss) (Max) @ Vds: 1215 pF @ 400 V
на замовлення 1123 шт:
термін постачання 21-31 дні (днів)
1+696.28 грн
10+460.90 грн
100+350.49 грн
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CY8C20636A-24LTXI CY8C20636A-24LTXI Infineon Technologies Infineon-CY8C20XX6A_S_1.8_V_Programmable_CapSense_Controller_with_SmartSense_Auto-tuning_1-33_Buttons_0-6_Sliders-DataSheet-v26_00-EN.pdf?fileId=8ac78c8c7d0d8da4017d0ecc6dc04671&utm_source=cypress&utm_medium=referral&utm_camp Description: MCU 8K FLASH 1K SRAM 48QFN
Packaging: Tray
Package / Case: 48-VFQFN Exposed Pad
Mounting Type: Surface Mount
Interface: I2C, SPI
RAM Size: 1K x 8
Operating Temperature: -40°C ~ 85°C
Voltage - Supply: 1.71V ~ 5.5V
Controller Series: CY8C20xx6A
Program Memory Type: FLASH (8kB)
Applications: Capacitive Sensing
Core Processor: M8C
Supplier Device Package: 48-QFN (7x7)
Number of I/O: 36
DigiKey Programmable: Not Verified
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SIGC28T60SEX1SA2 SIGC28T60SEX1SA2 Infineon Technologies Description: IGBT TRENCH FS 600V 50A DIE
Packaging: Bulk
Package / Case: Die
Mounting Type: Surface Mount
Operating Temperature: -40°C ~ 175°C (TJ)
Input Type: Standard
Vce(on) (Max) @ Vge, Ic: 2.05V @ 15V, 50A
Supplier Device Package: Die
IGBT Type: Trench Field Stop
Current - Collector (Ic) (Max): 50 A
Voltage - Collector Emitter Breakdown (Max): 600 V
Current - Collector Pulsed (Icm): 150 A
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CYPD8225-97BZXIT CYPD8225-97BZXIT Infineon Technologies Infineon-EZ-PD_TM_CCG8_USB_Type-C_port_controller-DataSheet-v08_00-EN.pdf?fileId=8ac78c8c85ecb34701863a96d4321bd2&da=t Description: IC USB MCU 256KB FLASH 97-VFBGA
Packaging: Cut Tape (CT)
Package / Case: 97-VFBGA
Mounting Type: Surface Mount
Interface: I2C, SPI, UART, USB
RAM Size: 32K x 8
Operating Temperature: -40°C ~ 85°C (TA)
Voltage - Supply: 2.7V ~ 5.5V
Controller Series: EZ-PD™
Program Memory Type: FLASH (256kB), ROM (96kB)
Applications: USB Type C
Core Processor: ARM® Cortex®-M0+
Supplier Device Package: 97-BGA (6x6)
Number of I/O: 50
на замовлення 733 шт:
термін постачання 21-31 дні (днів)
1+467.05 грн
10+346.17 грн
25+320.36 грн
100+273.98 грн
250+265.46 грн
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SPD02N60S5BTMA1 SPD02N60S5BTMA1 Infineon Technologies SPD_U02N60S5_Rev.2.4.pdf?folderId=db3a304412b407950112b408e8c90004&fileId=db3a304412b407950112b42c91374727 Description: MOSFET N-CH 600V 1.8A TO252-3
Packaging: Bulk
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 1.8A (Tc)
Rds On (Max) @ Id, Vgs: 3Ohm @ 1.1A, 10V
Power Dissipation (Max): 25W (Tc)
Vgs(th) (Max) @ Id: 5.5V @ 80µA
Supplier Device Package: PG-TO252-3-11
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 600 V
Gate Charge (Qg) (Max) @ Vgs: 9.5 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 240 pF @ 25 V
на замовлення 13370 шт:
термін постачання 21-31 дні (днів)
568+35.34 грн
Мінімальне замовлення: 568
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T7300N85X203A11XPSA1 Infineon Technologies Description: SCR MODULE HP T20235K-1
Packaging: Tray
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IPW60R099CM8XKSA1 IPW60R099CM8XKSA1 Infineon Technologies DS_IPW60R099CM8_2_0.pdf Description: IPW60R099CM8XKSA1
Packaging: Tape & Reel (TR)
Package / Case: TO-247-3
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 29A (Tc)
Rds On (Max) @ Id, Vgs: 99mOhm @ 10.1A, 10V
Power Dissipation (Max): 176W (Tc)
Vgs(th) (Max) @ Id: 4.7V @ 260µA
Supplier Device Package: PG-TO247-3-U06
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 600 V
Gate Charge (Qg) (Max) @ Vgs: 31 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 1330 pF @ 400 V
на замовлення 334 шт:
термін постачання 21-31 дні (днів)
2+309.80 грн
30+165.74 грн
120+136.65 грн
Мінімальне замовлення: 2
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IPW60R055CM8XKSA1 IPW60R055CM8XKSA1 Infineon Technologies DS_IPW60R055CM8_2_0.pdf Description: IPW60R055CM8XKSA1
Packaging: Tube
Package / Case: TO-247-3
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 44A (Tc)
Rds On (Max) @ Id, Vgs: 55mOhm @ 18.2A, 10V
Power Dissipation (Max): 227W (Tc)
Vgs(th) (Max) @ Id: 4.7V @ 440µA
Supplier Device Package: PG-TO247-3-U06
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 600 V
Gate Charge (Qg) (Max) @ Vgs: 51 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 2245 pF @ 400 V
на замовлення 135 шт:
термін постачання 21-31 дні (днів)
1+406.81 грн
30+222.77 грн
120+185.63 грн
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IPW60R024CM8XKSA1 IPW60R024CM8XKSA1 Infineon Technologies DS_IPW60R024CM8_2_0.pdf Description: IPW60R024CM8XKSA1
Packaging: Tape & Reel (TR)
Package / Case: TO-247-3
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 91A (Tc)
Rds On (Max) @ Id, Vgs: 24mOhm @ 41.7A, 10V
Power Dissipation (Max): 431W (Tc)
Vgs(th) (Max) @ Id: 4.7V @ 1.06mA
Supplier Device Package: PG-TO247-3-U06
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 600 V
Gate Charge (Qg) (Max) @ Vgs: 122 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 5382 pF @ 400 V
на замовлення 359 шт:
термін постачання 21-31 дні (днів)
1+704.10 грн
30+403.77 грн
120+343.63 грн
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IPW60R120CM8XKSA1 IPW60R120CM8XKSA1 Infineon Technologies Infineon-IPW60R120CM8-DataSheet-v02_00-EN.pdf?fileId=8ac78c8c9715623e0197173a9b7930bd Description: IPW60R120CM8XKSA1
Packaging: Tube
Package / Case: TO-247-3
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 23A (Tc)
Rds On (Max) @ Id, Vgs: 120mOhm @ 8.3A, 10V
Power Dissipation (Max): 131W (Tc)
Vgs(th) (Max) @ Id: 4.7V @ 200µA
Supplier Device Package: PG-TO247-3-U06
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 600 V
Gate Charge (Qg) (Max) @ Vgs: 24 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 1045 pF @ 400 V
на замовлення 184 шт:
термін постачання 21-31 дні (днів)
2+287.90 грн
30+152.55 грн
120+125.04 грн
Мінімальне замовлення: 2
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IPW60R070CM8XKSA1 IPW60R070CM8XKSA1 Infineon Technologies Infineon-IPW60R070CM8-DataSheet-v02_01-EN.pdf?fileId=8ac78c8c9715623e0197173dc084331f Description: IPW60R070CM8XKSA1
Packaging: Tube
Package / Case: TO-247-3
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 37A (Tc)
Rds On (Max) @ Id, Vgs: 70mOhm @ 14.3A, 10V
Power Dissipation (Max): 201W (Tc)
Vgs(th) (Max) @ Id: 4.7V @ 360µA
Supplier Device Package: PG-TO247-3-U06
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 600 V
Gate Charge (Qg) (Max) @ Vgs: 43 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 1878 pF @ 400 V
на замовлення 32 шт:
термін постачання 21-31 дні (днів)
1+364.57 грн
30+198.31 грн
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IPP040N08NF2SAKMA1 IPP040N08NF2SAKMA1 Infineon Technologies Infineon-IPP040N08NF2S-DataSheet-v02_00-EN.pdf?fileId=5546d46276c4f5350176f70a2eac169b Description: TRENCH 40<-<100V
Packaging: Bulk
Package / Case: TO-220-3
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 22A (Ta), 115A (Tc)
Rds On (Max) @ Id, Vgs: 4mOhm @ 80A, 10V
Power Dissipation (Max): 3.8W (Ta), 150W (Tc)
Vgs(th) (Max) @ Id: 3.8V @ 85µA
Supplier Device Package: PG-TO220-3
Drive Voltage (Max Rds On, Min Rds On): 6V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 80 V
Gate Charge (Qg) (Max) @ Vgs: 81 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 3800 pF @ 40 V
на замовлення 250000 шт:
термін постачання 21-31 дні (днів)
189+107.44 грн
Мінімальне замовлення: 189
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CYT2B75CADQ0AZEGST CYT2B75CADQ0AZEGST Infineon Technologies Infineon-Traveo_II_CYT2B7_Series-DataSheet-v01_00-EN.pdf?fileId=5546d462749a7c2d01749d90a89b4dc2 Description: IC MCU 32BT 1.0625MB FLSH 100QFP
Packaging: Cut Tape (CT)
Package / Case: 100-LQFP
Mounting Type: Surface Mount
Speed: 100MHz, 160MHz
Program Memory Size: 1.0625MB (1.0625M x 8)
RAM Size: 128K x 8
Operating Temperature: -40°C ~ 125°C (TA)
Oscillator Type: External, Internal
Program Memory Type: FLASH
EEPROM Size: 96K x 8
Core Processor: ARM® Cortex®-M0+, ARM® Cortex®-M4F
Data Converters: A/D 57x12b SAR
Core Size: 32-Bit Dual-Core
Voltage - Supply (Vcc/Vdd): 2.7V ~ 5.5V
Connectivity: CANbus, FIFO, I2C, IrDA, LINbus, SPI, UART/USART
Peripherals: Brown-out Detect/Reset, Crypto - AES, DMA, LVD, POR, PWM, SHA, TRNG, WDT
Supplier Device Package: 100-LQFP (14x14)
Number of I/O: 78
DigiKey Programmable: Not Verified
на замовлення 500 шт:
термін постачання 21-31 дні (днів)
1+934.11 грн
10+709.96 грн
25+662.47 грн
100+572.76 грн
250+549.43 грн
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S26HS512TGABHI003 S26HS512TGABHI003 Infineon Technologies Infineon-S26HS256T_S26HS512T_S26HS01GT_S26HL256T_S26HL512T_S26HL01GT_256Mb_512Mb_1Gb_SEMPER_TM_Flash_HYPERBUS_TM_interface_1-DataSheet-v67_00-EN.pdf?fileId=8ac78c8c7d0d8da4017d0ee6a0c96f54 Description: IC FLASH 512MBIT HYPERBUS 24FBGA
Packaging: Tape & Reel (TR)
Package / Case: 24-VBGA
Mounting Type: Surface Mount
Memory Size: 512Mbit
Memory Type: Non-Volatile
Operating Temperature: -40°C ~ 85°C (TA)
Voltage - Supply: 1.7V ~ 2V
Technology: FLASH - NOR (SLC)
Clock Frequency: 200 MHz
Memory Format: FLASH
Supplier Device Package: 24-FBGA (8x8)
Write Cycle Time - Word, Page: 1.7ms
Memory Interface: HyperBus
Access Time: 5.45 ns
Memory Organization: 64M x 8
DigiKey Programmable: Not Verified
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S26HL512TFPBHV003 S26HL512TFPBHV003 Infineon Technologies Infineon-S26HS256T_S26HS512T_S26HS01GT_S26HL256T_S26HL512T_S26HL01GT_256Mb_512Mb_1Gb_SEMPER_TM_Flash_HYPERBUS_TM_interface_1-DataSheet-v67_00-EN.pdf?fileId=8ac78c8c7d0d8da4017d0ee6a0c96f54 Description: IC FLASH 512MBIT HYPERBUS 24FBGA
Packaging: Tape & Reel (TR)
Package / Case: 24-VBGA
Mounting Type: Surface Mount
Memory Size: 512Mbit
Memory Type: Non-Volatile
Operating Temperature: -40°C ~ 105°C (TA)
Voltage - Supply: 2.7V ~ 3.6V
Technology: FLASH - NOR (SLC)
Clock Frequency: 166 MHz
Memory Format: FLASH
Supplier Device Package: 24-FBGA (6x8)
Write Cycle Time - Word, Page: 1.7ms
Memory Interface: HyperBus
Access Time: 6.5 ns
Memory Organization: 64M x 8
DigiKey Programmable: Not Verified
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S26HL512TFPBHV013 S26HL512TFPBHV013 Infineon Technologies Infineon-S26HS256T_S26HS512T_S26HS01GT_S26HL256T_S26HL512T_S26HL01GT_256Mb_512Mb_1Gb_SEMPER_TM_Flash_HYPERBUS_TM_interface_1-DataSheet-v67_00-EN.pdf?fileId=8ac78c8c7d0d8da4017d0ee6a0c96f54 Description: IC FLASH 512MBIT HYPERBUS 24FBGA
Packaging: Tape & Reel (TR)
Package / Case: 24-VBGA
Mounting Type: Surface Mount
Memory Size: 512Mbit
Memory Type: Non-Volatile
Operating Temperature: -40°C ~ 105°C (TA)
Voltage - Supply: 2.7V ~ 3.6V
Technology: FLASH - NOR (SLC)
Clock Frequency: 166 MHz
Memory Format: FLASH
Supplier Device Package: 24-FBGA (6x8)
Write Cycle Time - Word, Page: 1.7ms
Memory Interface: HyperBus
Access Time: 6.5 ns
Memory Organization: 64M x 8
DigiKey Programmable: Not Verified
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S26HS512TGABHV013 S26HS512TGABHV013 Infineon Technologies Infineon-S26HS256T_S26HS512T_S26HS01GT_S26HL256T_S26HL512T_S26HL01GT_256Mb_512Mb_1Gb_SEMPER_TM_Flash_HYPERBUS_TM_interface_1-DataSheet-v67_00-EN.pdf?fileId=8ac78c8c7d0d8da4017d0ee6a0c96f54 Description: IC FLASH 512MBIT HYPERBUS 24FBGA
Packaging: Tape & Reel (TR)
Package / Case: 24-VBGA
Mounting Type: Surface Mount
Memory Size: 512Mbit
Memory Type: Non-Volatile
Operating Temperature: -40°C ~ 105°C (TA)
Voltage - Supply: 1.7V ~ 2V
Technology: FLASH - NOR (SLC)
Clock Frequency: 200 MHz
Memory Format: FLASH
Supplier Device Package: 24-FBGA (6x8)
Write Cycle Time - Word, Page: 1.7ms
Memory Interface: HyperBus
Access Time: 5.45 ns
Memory Organization: 64M x 8
DigiKey Programmable: Not Verified
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S28HL512TFPBHV010 S28HL512TFPBHV010 Infineon Technologies S28H%28L%2CS%2901GT_256T_512T_RevA_7-8-19.pdf Description: IC FLASH 512MBIT SPI/OCTL 24FBGA
Packaging: Tray
Package / Case: 24-VBGA
Mounting Type: Surface Mount
Memory Size: 512Mbit
Memory Type: Non-Volatile
Operating Temperature: -40°C ~ 105°C (TA)
Voltage - Supply: 2.7V ~ 3.6V
Technology: FLASH - NOR (SLC)
Clock Frequency: 166 MHz
Memory Format: FLASH
Supplier Device Package: 24-FBGA (6x8)
Write Cycle Time - Word, Page: 1.7ms
Memory Interface: SPI - Octal I/O
Access Time: 6.5 ns
Memory Organization: 64M x 8
DigiKey Programmable: Not Verified
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S28HL512TFPBHB013 S28HL512TFPBHB013 Infineon Technologies S28H%28L%2CS%2901GT_256T_512T_RevA_7-8-19.pdf Description: IC FLASH 512MBIT SPI/OCTL 24FBGA
Packaging: Tape & Reel (TR)
Package / Case: 24-VBGA
Mounting Type: Surface Mount
Memory Size: 512Mbit
Memory Type: Non-Volatile
Operating Temperature: -40°C ~ 105°C (TA)
Voltage - Supply: 2.7V ~ 3.6V
Technology: FLASH - NOR (SLC)
Clock Frequency: 166 MHz
Memory Format: FLASH
Supplier Device Package: 24-FBGA (6x8)
Write Cycle Time - Word, Page: 1.7ms
Memory Interface: SPI - Octal I/O
Access Time: 6.5 ns
Memory Organization: 64M x 8
DigiKey Programmable: Not Verified
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S26HL512TFPBHB003 S26HL512TFPBHB003 Infineon Technologies Infineon-S26HS256T_S26HS512T_S26HS01GT_S26HL256T_S26HL512T_S26HL01GT_256Mb_512Mb_1Gb_SEMPER_TM_Flash_HYPERBUS_TM_interface_1-DataSheet-v67_00-EN.pdf?fileId=8ac78c8c7d0d8da4017d0ee6a0c96f54 Description: IC FLASH 512MBIT HYPERBUS 24FBGA
Packaging: Tape & Reel (TR)
Package / Case: 24-VBGA
Mounting Type: Surface Mount
Memory Size: 512Mbit
Memory Type: Non-Volatile
Operating Temperature: -40°C ~ 105°C (TA)
Voltage - Supply: 2.7V ~ 3.6V
Technology: FLASH - NOR (SLC)
Clock Frequency: 166 MHz
Memory Format: FLASH
Supplier Device Package: 24-FBGA (6x8)
Write Cycle Time - Word, Page: 1.7ms
Memory Interface: HyperBus
Access Time: 6.5 ns
Memory Organization: 64M x 8
DigiKey Programmable: Not Verified
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S26HL512TFPBHB013 S26HL512TFPBHB013 Infineon Technologies Infineon-S26HS256T_S26HS512T_S26HS01GT_S26HL256T_S26HL512T_S26HL01GT_256Mb_512Mb_1Gb_SEMPER_TM_Flash_HYPERBUS_TM_interface_1-DataSheet-v67_00-EN.pdf?fileId=8ac78c8c7d0d8da4017d0ee6a0c96f54 Description: IC FLASH 512MBIT HYPERBUS 24FBGA
Packaging: Tape & Reel (TR)
Package / Case: 24-VBGA
Mounting Type: Surface Mount
Memory Size: 512Mbit
Memory Type: Non-Volatile
Operating Temperature: -40°C ~ 105°C (TA)
Voltage - Supply: 2.7V ~ 3.6V
Technology: FLASH - NOR (SLC)
Clock Frequency: 166 MHz
Memory Format: FLASH
Supplier Device Package: 24-FBGA (6x8)
Write Cycle Time - Word, Page: 1.7ms
Memory Interface: HyperBus
Access Time: 6.5 ns
Memory Organization: 64M x 8
DigiKey Programmable: Not Verified
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S26HS512TGABHV010 S26HS512TGABHV010 Infineon Technologies Infineon-S26HS256T_S26HS512T_S26HS01GT_S26HL256T_S26HL512T_S26HL01GT_256Mb_512Mb_1Gb_SEMPER_TM_Flash_HYPERBUS_TM_interface_1-DataSheet-v67_00-EN.pdf?fileId=8ac78c8c7d0d8da4017d0ee6a0c96f54 Description: IC FLASH 512MBIT HYPERBUS 24FBGA
Packaging: Tray
Package / Case: 24-VBGA
Mounting Type: Surface Mount
Memory Size: 512Mbit
Memory Type: Non-Volatile
Operating Temperature: -40°C ~ 105°C (TA)
Voltage - Supply: 1.7V ~ 2V
Technology: FLASH - NOR (SLC)
Clock Frequency: 200 MHz
Memory Format: FLASH
Supplier Device Package: 24-FBGA (6x8)
Write Cycle Time - Word, Page: 1.7ms
Memory Interface: HyperBus
Access Time: 5.45 ns
Memory Organization: 64M x 8
DigiKey Programmable: Not Verified
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S26HL512TFPBHB000 S26HL512TFPBHB000 Infineon Technologies Infineon-S26HS256T_S26HS512T_S26HS01GT_S26HL256T_S26HL512T_S26HL01GT_256Mb_512Mb_1Gb_SEMPER_TM_Flash_HYPERBUS_TM_interface_1-DataSheet-v67_00-EN.pdf?fileId=8ac78c8c7d0d8da4017d0ee6a0c96f54 Description: IC FLASH 512MBIT HYPERBUS 24FBGA
Packaging: Tray
Package / Case: 24-VBGA
Mounting Type: Surface Mount
Memory Size: 512Mbit
Memory Type: Non-Volatile
Operating Temperature: -40°C ~ 105°C (TA)
Voltage - Supply: 2.7V ~ 3.6V
Technology: FLASH - NOR (SLC)
Clock Frequency: 166 MHz
Memory Format: FLASH
Supplier Device Package: 24-FBGA (6x8)
Write Cycle Time - Word, Page: 1.7ms
Memory Interface: HyperBus
Access Time: 6.5 ns
Memory Organization: 64M x 8
DigiKey Programmable: Not Verified
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S26HL512TFPBHM003 S26HL512TFPBHM003 Infineon Technologies Infineon-S26HS256T_S26HS512T_S26HS01GT_S26HL256T_S26HL512T_S26HL01GT_256Mb_512Mb_1Gb_SEMPER_TM_Flash_HYPERBUS_TM_interface_1-DataSheet-v67_00-EN.pdf?fileId=8ac78c8c7d0d8da4017d0ee6a0c96f54 Description: IC FLASH 512MBIT HYPERBUS 24FBGA
Packaging: Tape & Reel (TR)
Package / Case: 24-VBGA
Mounting Type: Surface Mount
Memory Size: 512Mbit
Memory Type: Non-Volatile
Operating Temperature: -40°C ~ 125°C (TA)
Voltage - Supply: 2.7V ~ 3.6V
Technology: FLASH - NOR (SLC)
Clock Frequency: 166 MHz
Memory Format: FLASH
Supplier Device Package: 24-FBGA (6x8)
Write Cycle Time - Word, Page: 1.7ms
Memory Interface: HyperBus
Access Time: 6.5 ns
Memory Organization: 64M x 8
DigiKey Programmable: Not Verified
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S26HL512TFPBHM013 S26HL512TFPBHM013 Infineon Technologies Infineon-S26HS256T_S26HS512T_S26HS01GT_S26HL256T_S26HL512T_S26HL01GT_256Mb_512Mb_1Gb_SEMPER_TM_Flash_HYPERBUS_TM_interface_1-DataSheet-v67_00-EN.pdf?fileId=8ac78c8c7d0d8da4017d0ee6a0c96f54 Description: IC FLASH 512MBIT HYPERBUS 24FBGA
Packaging: Tape & Reel (TR)
Package / Case: 24-VBGA
Mounting Type: Surface Mount
Memory Size: 512Mbit
Memory Type: Non-Volatile
Operating Temperature: -40°C ~ 125°C (TA)
Voltage - Supply: 2.7V ~ 3.6V
Technology: FLASH - NOR (SLC)
Clock Frequency: 166 MHz
Memory Format: FLASH
Supplier Device Package: 24-FBGA (6x8)
Write Cycle Time - Word, Page: 1.7ms
Memory Interface: HyperBus
Access Time: 6.5 ns
Memory Organization: 64M x 8
DigiKey Programmable: Not Verified
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S28HL512TFPBHM013 S28HL512TFPBHM013 Infineon Technologies S28H%28L%2CS%2901GT_256T_512T_RevA_7-8-19.pdf Description: IC FLASH 512MBIT SPI/OCTL 24FBGA
Packaging: Tape & Reel (TR)
Package / Case: 24-VBGA
Mounting Type: Surface Mount
Memory Size: 512Mbit
Memory Type: Non-Volatile
Operating Temperature: -40°C ~ 125°C (TA)
Voltage - Supply: 2.7V ~ 3.6V
Technology: FLASH - NOR (SLC)
Clock Frequency: 166 MHz
Memory Format: FLASH
Supplier Device Package: 24-FBGA (6x8)
Write Cycle Time - Word, Page: 1.7ms
Memory Interface: SPI - Octal I/O
Access Time: 6.5 ns
Memory Organization: 64M x 8
DigiKey Programmable: Not Verified
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S28HL512TFPBHB010 S28HL512TFPBHB010 Infineon Technologies S28H%28L%2CS%2901GT_256T_512T_RevA_7-8-19.pdf Description: IC FLASH 512MBIT SPI/OCTL 24FBGA
Packaging: Tray
Package / Case: 24-VBGA
Mounting Type: Surface Mount
Memory Size: 512Mbit
Memory Type: Non-Volatile
Operating Temperature: -40°C ~ 105°C (TA)
Voltage - Supply: 2.7V ~ 3.6V
Technology: FLASH - NOR (SLC)
Clock Frequency: 166 MHz
Memory Format: FLASH
Supplier Device Package: 24-FBGA (6x8)
Write Cycle Time - Word, Page: 1.7ms
Memory Interface: SPI - Octal I/O
Access Time: 6.5 ns
Memory Organization: 64M x 8
DigiKey Programmable: Not Verified
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S26HL512TFPBHB010 S26HL512TFPBHB010 Infineon Technologies Infineon-S26HS256T_S26HS512T_S26HS01GT_S26HL256T_S26HL512T_S26HL01GT_256Mb_512Mb_1Gb_SEMPER_TM_Flash_HYPERBUS_TM_interface_1-DataSheet-v67_00-EN.pdf?fileId=8ac78c8c7d0d8da4017d0ee6a0c96f54 Description: IC FLASH 512MBIT HYPERBUS 24FBGA
Packaging: Tray
Package / Case: 24-VBGA
Mounting Type: Surface Mount
Memory Size: 512Mbit
Memory Type: Non-Volatile
Operating Temperature: -40°C ~ 105°C (TA)
Voltage - Supply: 2.7V ~ 3.6V
Technology: FLASH - NOR (SLC)
Clock Frequency: 166 MHz
Memory Format: FLASH
Supplier Device Package: 24-FBGA (6x8)
Write Cycle Time - Word, Page: 1.7ms
Memory Interface: HyperBus
Access Time: 6.5 ns
Memory Organization: 64M x 8
DigiKey Programmable: Not Verified
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S28HL512TFPBHM010 S28HL512TFPBHM010 Infineon Technologies S28H%28L%2CS%2901GT_256T_512T_RevA_7-8-19.pdf Description: IC FLASH 512MBIT SPI/OCTL 24FBGA
Packaging: Tray
Package / Case: 24-VBGA
Mounting Type: Surface Mount
Memory Size: 512Mbit
Memory Type: Non-Volatile
Operating Temperature: -40°C ~ 125°C (TA)
Voltage - Supply: 2.7V ~ 3.6V
Technology: FLASH - NOR (SLC)
Clock Frequency: 166 MHz
Memory Format: FLASH
Supplier Device Package: 24-FBGA (6x8)
Write Cycle Time - Word, Page: 1.7ms
Memory Interface: SPI - Octal I/O
Access Time: 6.5 ns
Memory Organization: 64M x 8
DigiKey Programmable: Not Verified
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S26HL512TFPBHM000 S26HL512TFPBHM000 Infineon Technologies Infineon-S26HS256T_S26HS512T_S26HS01GT_S26HL256T_S26HL512T_S26HL01GT_256Mb_512Mb_1Gb_SEMPER_TM_Flash_HYPERBUS_TM_interface_1-DataSheet-v67_00-EN.pdf?fileId=8ac78c8c7d0d8da4017d0ee6a0c96f54 Description: IC FLASH 512MBIT HYPERBUS 24FBGA
Packaging: Tray
Package / Case: 24-VBGA
Mounting Type: Surface Mount
Memory Size: 512Mbit
Memory Type: Non-Volatile
Operating Temperature: -40°C ~ 125°C (TA)
Voltage - Supply: 2.7V ~ 3.6V
Technology: FLASH - NOR (SLC)
Clock Frequency: 166 MHz
Memory Format: FLASH
Supplier Device Package: 24-FBGA (6x8)
Write Cycle Time - Word, Page: 1.7ms
Memory Interface: HyperBus
Access Time: 6.5 ns
Memory Organization: 64M x 8
DigiKey Programmable: Not Verified
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S26HL512TFPBHM010 S26HL512TFPBHM010 Infineon Technologies Infineon-S26HS256T_S26HS512T_S26HS01GT_S26HL256T_S26HL512T_S26HL01GT_256Mb_512Mb_1Gb_SEMPER_TM_Flash_HYPERBUS_TM_interface_1-DataSheet-v67_00-EN.pdf?fileId=8ac78c8c7d0d8da4017d0ee6a0c96f54 Description: IC FLASH 512MBIT HYPERBUS 24FBGA
Packaging: Tray
Package / Case: 24-VBGA
Mounting Type: Surface Mount
Memory Size: 512Mbit
Memory Type: Non-Volatile
Operating Temperature: -40°C ~ 125°C (TA)
Voltage - Supply: 2.7V ~ 3.6V
Technology: FLASH - NOR (SLC)
Clock Frequency: 166 MHz
Memory Format: FLASH
Supplier Device Package: 24-FBGA (6x8)
Write Cycle Time - Word, Page: 1.7ms
Memory Interface: HyperBus
Access Time: 6.5 ns
Memory Organization: 64M x 8
DigiKey Programmable: Not Verified
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S28HL01GTFPBHI033 S28HL01GTFPBHI033 Infineon Technologies S28H%28L%2CS%2901GT_256T_512T_RevA_7-8-19.pdf Description: IC FLASH 1GBIT SPI/OCTAL 24FBGA
Packaging: Tape & Reel (TR)
Package / Case: 24-VBGA
Mounting Type: Surface Mount
Memory Size: 1Gbit
Memory Type: Non-Volatile
Operating Temperature: -40°C ~ 85°C (TA)
Voltage - Supply: 2.7V ~ 3.6V
Technology: FLASH - NOR (SLC)
Clock Frequency: 166 MHz
Memory Format: FLASH
Supplier Device Package: 24-FBGA (8x8)
Write Cycle Time - Word, Page: 1.7ms
Memory Interface: SPI - Octal I/O
Access Time: 6.5 ns
Memory Organization: 128M x 8
DigiKey Programmable: Not Verified
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CY8C624ABZI-S2D04T PdfFile_108807.pdf
CY8C624ABZI-S2D04T
Виробник: Infineon Technologies
Description: IC MCU 32BIT 2MB FLASH 124VFBGA
Packaging: Tape & Reel (TR)
Package / Case: 124-VFBGA
Mounting Type: Surface Mount
Speed: 100MHz, 150MHz
Program Memory Size: 2MB (2M x 8)
RAM Size: 1M x 8
Operating Temperature: -40°C ~ 85°C (TA)
Oscillator Type: External, Internal
Program Memory Type: FLASH
EEPROM Size: 32K x 8
Core Processor: ARM® Cortex®-M0+, ARM® Cortex®-M4F
Data Converters: A/D 16x10/12b SAR ; D/A 2x7/8b Sigma-Delta
Core Size: 32-Bit Dual-Core
Voltage - Supply (Vcc/Vdd): 1.7V ~ 3.6V
Connectivity: eMMC/SD/SDIO, FIFO, I2C, IrDA, LINbus, Microwire, PCM, PDM, SmartCard, SPI, SSP, UART/USART, USB
Peripherals: Brown-out Detect/Reset, DMA, I2S, LCD, LVD, POR, PWM, Temp Sensor, WDT
Supplier Device Package: 124-VFBGA (9x9)
Number of I/O: 100
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CY8C624ABZI-S2D14T PdfFile_108807.pdf
CY8C624ABZI-S2D14T
Виробник: Infineon Technologies
Description: IC MCU 32BIT 2MB FLASH 124VFBGA
Packaging: Tape & Reel (TR)
Package / Case: 124-VFBGA
Mounting Type: Surface Mount
Speed: 100MHz, 150MHz
Program Memory Size: 2MB (2M x 8)
RAM Size: 1M x 8
Operating Temperature: -40°C ~ 85°C (TA)
Oscillator Type: External, Internal
Program Memory Type: FLASH
EEPROM Size: 32K x 8
Core Processor: ARM® Cortex®-M0+, ARM® Cortex®-M4F
Data Converters: A/D 16x10/12b SAR ; D/A 2x7/8b Sigma-Delta
Core Size: 32-Bit Dual-Core
Voltage - Supply (Vcc/Vdd): 1.7V ~ 3.6V
Connectivity: eMMC/SD/SDIO, FIFO, I2C, IrDA, LINbus, Microwire, PCM, PDM, SmartCard, SPI, SSP, UART/USART, USB
Peripherals: Brown-out Detect/Reset, CapSense, DMA, I2S, LCD, LVD, POR, PWM, Temp Sensor, WDT
Supplier Device Package: 124-VFBGA (9x9)
Number of I/O: 100
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CY8C614ABZI-S2F44T
CY8C614ABZI-S2F44T
Виробник: Infineon Technologies
Description: IC MCU 32BIT 2MB FLASH 124VFBGA
Packaging: Tape & Reel (TR)
Package / Case: 124-VFBGA
Mounting Type: Surface Mount
Speed: 150MHz
Program Memory Size: 2MB (2M x 8)
RAM Size: 1M x 8
Operating Temperature: -40°C ~ 85°C (TA)
Oscillator Type: External, Internal
Program Memory Type: FLASH
Core Processor: ARM® Cortex®-M4F
Data Converters: A/D 16x10/12b SAR ; D/A 2x7/8b Sigma-Delta
Core Size: 32-Bit
Voltage - Supply (Vcc/Vdd): 1.7V ~ 3.6V
Connectivity: eMMC/SD/SDIO, FIFO, I2C, IrDA, LINbus, Microwire, QSPI, SmartCard, SPI, SSP, UART/USART, USB
Peripherals: Brown-out Detect/Reset, CapSense, Crypto - AES, DMA, LCD, LVD, PMC, POR, PWM, RSA, SHA, Temp Sensor, TRNG, WDT
Supplier Device Package: 124-VFBGA (9x9)
Number of I/O: 100
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CY8C614ABZI-S2F44 Infineon-PSoC_6_MCU_CY8C61x8_CY8C61xA-DataSheet-v04_00-EN.pdf?fileId=8ac78c8c7d0d8da4017d0eea1f6b72fa
CY8C614ABZI-S2F44
Виробник: Infineon Technologies
Description: IC MCU 32BIT 2MB FLASH 124VFBGA
Packaging: Tray
Package / Case: 124-VFBGA
Mounting Type: Surface Mount
Speed: 100MHz, 150MHz
Program Memory Size: 2MB (2M x 8)
RAM Size: 1M x 8
Operating Temperature: -40°C ~ 85°C (TA)
Oscillator Type: External, Internal
Program Memory Type: FLASH
Core Processor: ARM® Cortex®-M0+, ARM® Cortex®-M4F
Data Converters: A/D 16x8b, 16x10/12b SAR, Sigma-Delta; D/A 2x7/8b
Core Size: 32-Bit Dual-Core
Voltage - Supply (Vcc/Vdd): 1.7V ~ 3.6V
Connectivity: eMMC/SD/SDIO, I2C, IrDA, LINbus, Microwire, QSPI, SmartCard, SPI, SSP, UART/USART, USB
Peripherals: Brown-out Detect/Reset, CapSense, DMA, I2S, LCD, LVD, POR, PWM, Temp Sensor, WDT
Supplier Device Package: 124-VFBGA (9x9)
Number of I/O: 100
DigiKey Programmable: Not Verified
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IPAN80R280P7XKSA1 infineon-ipan80r280p7-ds-en.pdf
IPAN80R280P7XKSA1
Виробник: Infineon Technologies
Description: MOSFET N-CH 800V 17A TO220
Packaging: Bulk
Package / Case: TO-220-3 Full Pack
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 17A (Tc)
Rds On (Max) @ Id, Vgs: 280mOhm @ 7.2A, 10V
Power Dissipation (Max): 30W (Tc)
Vgs(th) (Max) @ Id: 3.5V @ 360µA
Supplier Device Package: PG-TO220-3-FP
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 800 V
Gate Charge (Qg) (Max) @ Vgs: 36 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 1200 pF @ 500 V
на замовлення 16881 шт:
термін постачання 21-31 дні (днів)
Кількість Ціна
198+101.35 грн
Мінімальне замовлення: 198
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CYW43012C0WKWBGT infineon-cyw43012-product-overview-productbrief-en.pdf?fileId=8ac78c8c7d0d8da4017d0f662eb353fe
CYW43012C0WKWBGT
Виробник: Infineon Technologies
Description: RF TXRX MODULE BLUETOOTH SMD
Packaging: Cut Tape (CT)
Package / Case: 24-VBGA
Mounting Type: Surface Mount
Frequency: 2.4GHz, 5GHz
Data Rate: 78Mbps
Protocol: 802.11a/b/g/n, Bluetooth v5.0
Antenna Type: Antenna Not Included
RF Family/Standard: Bluetooth
Serial Interfaces: UART
на замовлення 5000 шт:
термін постачання 21-31 дні (днів)
Кількість Ціна
1+614.13 грн
10+513.26 грн
25+486.04 грн
100+421.10 грн
250+400.12 грн
500+385.32 грн
1000+365.28 грн
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FZ1500R33HL3NPSA1 FZ1500R33HL3.pdf?t.download=true&u=ovmfp3
Виробник: Infineon Technologies
Description: FZ1500R33 - INSULATED GATE BIPOL
Packaging: Bulk
на замовлення 8 шт:
термін постачання 21-31 дні (днів)
Кількість Ціна
1+104052.62 грн
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FD300R17KE4HPSA1 Infineon-FD300R17KE4-DataSheet-v01_00-EN.pdf?fileId=8ac78c8c956a0a4701957a5417a47ff1
FD300R17KE4HPSA1
Виробник: Infineon Technologies
Description: MEDIUM POWER 62MM
Packaging: Tray
Package / Case: Module
Mounting Type: Chassis Mount
Input: Standard
Configuration: Single
Operating Temperature: -40°C ~ 150°C (TJ)
Vce(on) (Max) @ Vge, Ic: 2.3V @ 15V, 300A
NTC Thermistor: No
IGBT Type: Trench Field Stop
Current - Collector (Ic) (Max): 300 A
Voltage - Collector Emitter Breakdown (Max): 1700 V
Current - Collector Cutoff (Max): 1 mA
Input Capacitance (Cies) @ Vce: 24.5 nF @ 25 V
на замовлення 28 шт:
термін постачання 21-31 дні (днів)
Кількість Ціна
1+8998.39 грн
10+7579.83 грн
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IGT65R055D2ATMA1 Infineon-IGT65R055D2-DataSheet-v01_00-EN.pdf?fileId=8ac78c8c8eeb092c018f0a5e99970a26
IGT65R055D2ATMA1
Виробник: Infineon Technologies
Description: IGT65R055D2ATMA1
Packaging: Tape & Reel (TR)
Package / Case: 8-PowerSFN
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: GaNFET (Gallium Nitride)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 31A (Tc)
Power Dissipation (Max): 106W (Tc)
Vgs(th) (Max) @ Id: 1.6V @ 2.6mA
Supplier Device Package: PG-HSOF-8-3
Vgs (Max): -10V
Drain to Source Voltage (Vdss): 650 V
Gate Charge (Qg) (Max) @ Vgs: 4.7 nC @ 3 V
Input Capacitance (Ciss) (Max) @ Vds: 340 pF @ 400 V
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IGT65R055D2ATMA1 Infineon-IGT65R055D2-DataSheet-v01_00-EN.pdf?fileId=8ac78c8c8eeb092c018f0a5e99970a26
IGT65R055D2ATMA1
Виробник: Infineon Technologies
Description: IGT65R055D2ATMA1
Packaging: Cut Tape (CT)
Package / Case: 8-PowerSFN
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: GaNFET (Gallium Nitride)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 31A (Tc)
Power Dissipation (Max): 106W (Tc)
Vgs(th) (Max) @ Id: 1.6V @ 2.6mA
Supplier Device Package: PG-HSOF-8-3
Vgs (Max): -10V
Drain to Source Voltage (Vdss): 650 V
Gate Charge (Qg) (Max) @ Vgs: 4.7 nC @ 3 V
Input Capacitance (Ciss) (Max) @ Vds: 340 pF @ 400 V
на замовлення 485 шт:
термін постачання 21-31 дні (днів)
Кількість Ціна
1+452.19 грн
10+293.13 грн
100+215.22 грн
В кошику  од. на суму  грн.
IRF630NPBFAKMA1 Infineon-IRF630N-DataSheet-v01_00-EN.pdf
IRF630NPBFAKMA1
Виробник: Infineon Technologies
Description: PLANAR 40<-<100V
Packaging: Tube
Package / Case: TO-220-3
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 9.3A (Tc)
Rds On (Max) @ Id, Vgs: 300mOhm @ 5.4A, 10V
Power Dissipation (Max): 82W (Tc)
Vgs(th) (Max) @ Id: 4V @ 250µA
Supplier Device Package: TO-220AB
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 200 V
Gate Charge (Qg) (Max) @ Vgs: 35 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 575 pF @ 25 V
товару немає в наявності
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SHIELDBTS70082EPZTOBO1 infineon-profet-2-12v-grade0-productbrief-en.pdf
Виробник: Infineon Technologies
Description: SHIELD_BTS7008-2EPZ
Packaging: Box
Function: Switch
Type: Power Management
Contents: Board(s)
Utilized IC / Part: BTS7008-2EPZ
на замовлення 1 шт:
термін постачання 21-31 дні (днів)
Кількість Ціна
1+6688.95 грн
В кошику  од. на суму  грн.
SHIELDBTS70401EPZTOBO1 infineon-profet-2-12v-grade0-productbrief-en.pdf
Виробник: Infineon Technologies
Description: SHIELD_BTS7040-1EPZ
Packaging: Box
Function: Switch
Type: Power Management
Contents: Board(s)
Utilized IC / Part: BTS7040-1EPZ
на замовлення 1 шт:
термін постачання 21-31 дні (днів)
Кількість Ціна
1+7107.49 грн
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IPW65R060CM8XKSA1 Infineon-IPW65R060CM8-DataSheet-v02_01-EN.pdf?fileId=8ac78c8c96250806019626d9c55260d5
IPW65R060CM8XKSA1
Виробник: Infineon Technologies
Description: IPW65R060CM8XKSA1
Packaging: Tube
Package / Case: TO-247-3
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 45A (Tc)
Rds On (Max) @ Id, Vgs: 60mOhm @ 16.7A, 10V
Power Dissipation (Max): 227W (Tc)
Vgs(th) (Max) @ Id: 4.7V @ 440µA
Supplier Device Package: PG-TO247-3-U06
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 650 V
Gate Charge (Qg) (Max) @ Vgs: 52 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 2462 pF @ 400 V
товару немає в наявності
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TDB6HK180N16RRPB11BPSA1 Infineon-TDB6HK180N16RR-DS-v02_00-en_cn.pdf?fileId=db3a304340f610c201410c3f12e4330c
TDB6HK180N16RRPB11BPSA1
Виробник: Infineon Technologies
Description: SCR MODULE 1.6KV MODULE
Packaging: Tray
Package / Case: Module
Mounting Type: Chassis Mount
Operating Temperature: 175°C (TJ)
Structure: Bridge, 3-Phase - SCRs/Diodes - IGBT with Diode
Current - Hold (Ih) (Max): 220 mA
Current - Gate Trigger (Igt) (Max): 100 mA
Current - Non Rep. Surge 50, 60Hz (Itsm): 1600A @ 50Hz
Number of SCRs, Diodes: 3 SCRs, 3 Diodes
Voltage - Gate Trigger (Vgt) (Max): 2 V
Voltage - Off State: 1.6 kV
на замовлення 20 шт:
термін постачання 21-31 дні (днів)
Кількість Ціна
1+6650.61 грн
10+5291.58 грн
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CYW20829B0P4TAI200XUMA1
Виробник: Infineon Technologies
Description: BLE INDUSTRIAL AND IOT
Packaging: Tape & Reel (TR)
товару немає в наявності
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FS100R12W2T7B11ABPSA2 Infineon-FS100R12W2T7_B11-DataSheet-v01_00-EN.pdf?fileId=5546d46267c74c9a01683d5d7ab56640
FS100R12W2T7B11ABPSA2
Виробник: Infineon Technologies
Description: IGBT MODULE 1200V 100A
Packaging: Tray
Package / Case: Module
Mounting Type: Chassis Mount
Input: Standard
Configuration: Three Phase Inverter
Operating Temperature: -40°C ~ 150°C (TJ)
Vce(on) (Max) @ Vge, Ic: 1.8V @ 15V, 100A
NTC Thermistor: Yes
IGBT Type: Trench Field Stop
Current - Collector (Ic) (Max): 100 A
Voltage - Collector Emitter Breakdown (Max): 1200 V
Current - Collector Cutoff (Max): 8 µA
Input Capacitance (Cies) @ Vce: 21700 pF @ 25 V
на замовлення 29 шт:
термін постачання 21-31 дні (днів)
Кількість Ціна
1+4647.06 грн
15+3442.64 грн
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IMCQ120R026M2HXTMA1 DS_IMCQ120R026M2H_v1.00_en.pdf
IMCQ120R026M2HXTMA1
Виробник: Infineon Technologies
Description: SICFET N-CH 1200V 82A 22PWRBSOP
Packaging: Tape & Reel (TR)
Package / Case: 22-PowerBSOP Module
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: SiCFET (Silicon Carbide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 82A (Tc)
Rds On (Max) @ Id, Vgs: 25.4mOhm @ 27A, 18V
Power Dissipation (Max): 405W (Tc)
Vgs(th) (Max) @ Id: 5.1V @ 8.6mA
Supplier Device Package: PG-HDSOP-22-3
Drive Voltage (Max Rds On, Min Rds On): 15V, 18V
Vgs (Max): +23V, -7V
Drain to Source Voltage (Vdss): 1200 V
Gate Charge (Qg) (Max) @ Vgs: 63.4 nC @ 18 V
Input Capacitance (Ciss) (Max) @ Vds: 2540 pF @ 800 V
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IMCQ120R026M2HXTMA1 DS_IMCQ120R026M2H_v1.00_en.pdf
IMCQ120R026M2HXTMA1
Виробник: Infineon Technologies
Description: SICFET N-CH 1200V 82A 22PWRBSOP
Packaging: Cut Tape (CT)
Package / Case: 22-PowerBSOP Module
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: SiCFET (Silicon Carbide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 82A (Tc)
Rds On (Max) @ Id, Vgs: 25.4mOhm @ 27A, 18V
Power Dissipation (Max): 405W (Tc)
Vgs(th) (Max) @ Id: 5.1V @ 8.6mA
Supplier Device Package: PG-HDSOP-22-3
Drive Voltage (Max Rds On, Min Rds On): 15V, 18V
Vgs (Max): +23V, -7V
Drain to Source Voltage (Vdss): 1200 V
Gate Charge (Qg) (Max) @ Vgs: 63.4 nC @ 18 V
Input Capacitance (Ciss) (Max) @ Vds: 2540 pF @ 800 V
на замовлення 374 шт:
термін постачання 21-31 дні (днів)
Кількість Ціна
1+963.83 грн
10+649.47 грн
100+534.20 грн
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ISC011N04NM7VATMA1 448_ISC011N04NM7V.pdf
ISC011N04NM7VATMA1
Виробник: Infineon Technologies
Description: ISC011N04NM7VATMA1
Packaging: Tape & Reel (TR)
Package / Case: 8-PowerTDFN
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 38A (Ta), 256A (Tc)
Rds On (Max) @ Id, Vgs: 1.05mOhm @ 50A, 15V
Power Dissipation (Max): 3W (Ta), 136W (Tc)
Vgs(th) (Max) @ Id: 3.15V @ 56µA
Supplier Device Package: PG-TDSON-8
Drive Voltage (Max Rds On, Min Rds On): 10V, 15V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 40 V
Gate Charge (Qg) (Max) @ Vgs: 73 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 3800 pF @ 20 V
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ISC011N04NM7VATMA1 448_ISC011N04NM7V.pdf
ISC011N04NM7VATMA1
Виробник: Infineon Technologies
Description: ISC011N04NM7VATMA1
Packaging: Cut Tape (CT)
Package / Case: 8-PowerTDFN
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 38A (Ta), 256A (Tc)
Rds On (Max) @ Id, Vgs: 1.05mOhm @ 50A, 15V
Power Dissipation (Max): 3W (Ta), 136W (Tc)
Vgs(th) (Max) @ Id: 3.15V @ 56µA
Supplier Device Package: PG-TDSON-8
Drive Voltage (Max Rds On, Min Rds On): 10V, 15V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 40 V
Gate Charge (Qg) (Max) @ Vgs: 73 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 3800 pF @ 20 V
на замовлення 4799 шт:
термін постачання 21-31 дні (днів)
Кількість Ціна
2+158.81 грн
10+98.01 грн
100+66.62 грн
500+49.90 грн
1000+45.84 грн
2000+44.96 грн
Мінімальне замовлення: 2
В кошику  од. на суму  грн.
BDP954H6327XTSA1 Infineon-BDP948_BDP950_BDP954-DS-v01_01-en.pdf?fileId=db3a304314dca38901156149b3e81f67
BDP954H6327XTSA1
Виробник: Infineon Technologies
Description: TRANS PNP 100V 3A PG-SOT223-4
Packaging: Bulk
Package / Case: TO-261-4, TO-261AA
Mounting Type: Surface Mount
Transistor Type: PNP
Operating Temperature: 150°C (TJ)
Vce Saturation (Max) @ Ib, Ic: 500mV @ 200mA, 2A
Current - Collector Cutoff (Max): 100nA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce: 85 @ 500mA, 1V
Frequency - Transition: 100MHz
Supplier Device Package: PG-SOT223-4
Current - Collector (Ic) (Max): 3 A
Voltage - Collector Emitter Breakdown (Max): 100 V
Power - Max: 5 W
на замовлення 18500 шт:
термін постачання 21-31 дні (днів)
Кількість Ціна
980+20.61 грн
Мінімальне замовлення: 980
В кошику  од. на суму  грн.
IR3899AMTRPBFXUMA1 Infineon-IR3899AMTRPBF-DataSheet-v02_30-EN.pdf?fileId=5546d46276fb756a0177072216135f1f
IR3899AMTRPBFXUMA1
Виробник: Infineon Technologies
Description: IC REG BUCK ADJ 9A 19IQFN
Packaging: Cut Tape (CT)
Package / Case: 19-PowerVFQFN
Output Type: Adjustable
Mounting Type: Surface Mount
Number of Outputs: 1
Function: Step-Down
Current - Output: 9A
Operating Temperature: -40°C ~ 125°C (TJ)
Output Configuration: Positive
Frequency - Switching: 600kHz ~ 2MHz
Voltage - Input (Max): 17V
Topology: Buck
Supplier Device Package: PG-IQFN-19-900
Synchronous Rectifier: Yes
Voltage - Output (Max): 6V
Voltage - Input (Min): 4.5V
Voltage - Output (Min/Fixed): 0.6V
на замовлення 3630 шт:
термін постачання 21-31 дні (днів)
Кількість Ціна
2+165.07 грн
10+118.13 грн
25+107.88 грн
100+90.69 грн
250+85.66 грн
500+82.63 грн
1000+78.82 грн
Мінімальне замовлення: 2
В кошику  од. на суму  грн.
IQFH39N04NM6ATMA1 Infineon-IQFH39N04NM6-DataSheet-v02_00-EN.pdf?fileId=8ac78c8c8eeb092c018f09d4297e4a4f
IQFH39N04NM6ATMA1
Виробник: Infineon Technologies
Description: TRENCH <= 40V
Packaging: Tape & Reel (TR)
Package / Case: 12-PowerTDFN
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 63A (Ta), 600A (Tc)
Rds On (Max) @ Id, Vgs: 0.39mOhm @ 100A, 10V
Power Dissipation (Max): 3W (Ta), 273W (Tc)
Vgs(th) (Max) @ Id: 2.8V @ 1.05mA
Supplier Device Package: PG-TSON-12-1
Drive Voltage (Max Rds On, Min Rds On): 6V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 40 V
Gate Charge (Qg) (Max) @ Vgs: 273 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 16400 pF @ 20 V
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IQFH39N04NM6ATMA1 Infineon-IQFH39N04NM6-DataSheet-v02_00-EN.pdf?fileId=8ac78c8c8eeb092c018f09d4297e4a4f
IQFH39N04NM6ATMA1
Виробник: Infineon Technologies
Description: TRENCH <= 40V
Packaging: Cut Tape (CT)
Package / Case: 12-PowerTDFN
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 63A (Ta), 600A (Tc)
Rds On (Max) @ Id, Vgs: 0.39mOhm @ 100A, 10V
Power Dissipation (Max): 3W (Ta), 273W (Tc)
Vgs(th) (Max) @ Id: 2.8V @ 1.05mA
Supplier Device Package: PG-TSON-12-1
Drive Voltage (Max Rds On, Min Rds On): 6V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 40 V
Gate Charge (Qg) (Max) @ Vgs: 273 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 16400 pF @ 20 V
на замовлення 2996 шт:
термін постачання 21-31 дні (днів)
Кількість Ціна
1+418.55 грн
10+286.73 грн
100+210.07 грн
В кошику  од. на суму  грн.
SAF-XC866-4FRA BC Infineon-XC866-DS-v01_02-en.pdf?folderId=db3a304412b407950112b408e8c90004&fileId=db3a304412b407950112b4198e7528a5&ack=t
SAF-XC866-4FRA BC
Виробник: Infineon Technologies
Description: IC MCU 8BIT 16KB FLASH 38TSSOP
Packaging: Tape & Reel (TR)
Package / Case: 38-TFSOP (0.173", 4.40mm Width)
Mounting Type: Surface Mount
Speed: 86MHz
Program Memory Size: 16KB (16K x 8)
RAM Size: 768 x 8
Operating Temperature: -40°C ~ 85°C (TA)
Oscillator Type: Internal
Program Memory Type: FLASH
Core Processor: XC800
Data Converters: A/D 8x10b
Core Size: 8-Bit
Voltage - Supply (Vcc/Vdd): 4.5V ~ 5.5V
Connectivity: SSI, UART/USART
Peripherals: Brown-out Detect/Reset, POR, PWM, WDT
Supplier Device Package: PG-TSSOP-38
Number of I/O: 19
DigiKey Programmable: Not Verified
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SPU02N60S5BKMA1 SPD_U02N60S5_Rev.2.4.pdf?folderId=db3a304412b407950112b408e8c90004&fileId=db3a304412b407950112b42c91374727
SPU02N60S5BKMA1
Виробник: Infineon Technologies
Description: MOSFET N-CH 600V 1.8A TO251-3
Packaging: Bulk
Package / Case: TO-251-3 Short Leads, IPak, TO-251AA
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 1.8A (Tc)
Rds On (Max) @ Id, Vgs: 3Ohm @ 1.1A, 10V
Power Dissipation (Max): 25W (Tc)
Vgs(th) (Max) @ Id: 5.5V @ 80µA
Supplier Device Package: PG-TO251-3-21
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 600 V
Gate Charge (Qg) (Max) @ Vgs: 9.5 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 240 pF @ 25 V
на замовлення 23717 шт:
термін постачання 21-31 дні (днів)
Кількість Ціна
296+67.74 грн
Мінімальне замовлення: 296
В кошику  од. на суму  грн.
IMT65R033M2HXUMA1 Infineon-IMT65R033M2H-DataSheet-v02_01-EN.pdf?fileId=8ac78c8c92bcf0b001934e2151653c8f
IMT65R033M2HXUMA1
Виробник: Infineon Technologies
Description: SILICON CARBIDE MOSFET
Packaging: Tape & Reel (TR)
Package / Case: 8-PowerSFN
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: SiCFET (Silicon Carbide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 68A (Tc)
Rds On (Max) @ Id, Vgs: 30mOhm @ 27.9A, 20V
Power Dissipation (Max): 312W (Tc)
Vgs(th) (Max) @ Id: 5.6V @ 5.7mA
Supplier Device Package: PG-HSOF-8-2
Drive Voltage (Max Rds On, Min Rds On): 15V, 20V
Vgs (Max): +23V, -7V
Drain to Source Voltage (Vdss): 650 V
Gate Charge (Qg) (Max) @ Vgs: 34 nC @ 18 V
Input Capacitance (Ciss) (Max) @ Vds: 1215 pF @ 400 V
товару немає в наявності
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IMT65R033M2HXUMA1 Infineon-IMT65R033M2H-DataSheet-v02_01-EN.pdf?fileId=8ac78c8c92bcf0b001934e2151653c8f
IMT65R033M2HXUMA1
Виробник: Infineon Technologies
Description: SILICON CARBIDE MOSFET
Packaging: Cut Tape (CT)
Package / Case: 8-PowerSFN
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: SiCFET (Silicon Carbide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 68A (Tc)
Rds On (Max) @ Id, Vgs: 30mOhm @ 27.9A, 20V
Power Dissipation (Max): 312W (Tc)
Vgs(th) (Max) @ Id: 5.6V @ 5.7mA
Supplier Device Package: PG-HSOF-8-2
Drive Voltage (Max Rds On, Min Rds On): 15V, 20V
Vgs (Max): +23V, -7V
Drain to Source Voltage (Vdss): 650 V
Gate Charge (Qg) (Max) @ Vgs: 34 nC @ 18 V
Input Capacitance (Ciss) (Max) @ Vds: 1215 pF @ 400 V
на замовлення 1123 шт:
термін постачання 21-31 дні (днів)
Кількість Ціна
1+696.28 грн
10+460.90 грн
100+350.49 грн
В кошику  од. на суму  грн.
CY8C20636A-24LTXI Infineon-CY8C20XX6A_S_1.8_V_Programmable_CapSense_Controller_with_SmartSense_Auto-tuning_1-33_Buttons_0-6_Sliders-DataSheet-v26_00-EN.pdf?fileId=8ac78c8c7d0d8da4017d0ecc6dc04671&utm_source=cypress&utm_medium=referral&utm_camp
CY8C20636A-24LTXI
Виробник: Infineon Technologies
Description: MCU 8K FLASH 1K SRAM 48QFN
Packaging: Tray
Package / Case: 48-VFQFN Exposed Pad
Mounting Type: Surface Mount
Interface: I2C, SPI
RAM Size: 1K x 8
Operating Temperature: -40°C ~ 85°C
Voltage - Supply: 1.71V ~ 5.5V
Controller Series: CY8C20xx6A
Program Memory Type: FLASH (8kB)
Applications: Capacitive Sensing
Core Processor: M8C
Supplier Device Package: 48-QFN (7x7)
Number of I/O: 36
DigiKey Programmable: Not Verified
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SIGC28T60SEX1SA2
SIGC28T60SEX1SA2
Виробник: Infineon Technologies
Description: IGBT TRENCH FS 600V 50A DIE
Packaging: Bulk
Package / Case: Die
Mounting Type: Surface Mount
Operating Temperature: -40°C ~ 175°C (TJ)
Input Type: Standard
Vce(on) (Max) @ Vge, Ic: 2.05V @ 15V, 50A
Supplier Device Package: Die
IGBT Type: Trench Field Stop
Current - Collector (Ic) (Max): 50 A
Voltage - Collector Emitter Breakdown (Max): 600 V
Current - Collector Pulsed (Icm): 150 A
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CYPD8225-97BZXIT Infineon-EZ-PD_TM_CCG8_USB_Type-C_port_controller-DataSheet-v08_00-EN.pdf?fileId=8ac78c8c85ecb34701863a96d4321bd2&da=t
CYPD8225-97BZXIT
Виробник: Infineon Technologies
Description: IC USB MCU 256KB FLASH 97-VFBGA
Packaging: Cut Tape (CT)
Package / Case: 97-VFBGA
Mounting Type: Surface Mount
Interface: I2C, SPI, UART, USB
RAM Size: 32K x 8
Operating Temperature: -40°C ~ 85°C (TA)
Voltage - Supply: 2.7V ~ 5.5V
Controller Series: EZ-PD™
Program Memory Type: FLASH (256kB), ROM (96kB)
Applications: USB Type C
Core Processor: ARM® Cortex®-M0+
Supplier Device Package: 97-BGA (6x6)
Number of I/O: 50
на замовлення 733 шт:
термін постачання 21-31 дні (днів)
Кількість Ціна
1+467.05 грн
10+346.17 грн
25+320.36 грн
100+273.98 грн
250+265.46 грн
В кошику  од. на суму  грн.
SPD02N60S5BTMA1 SPD_U02N60S5_Rev.2.4.pdf?folderId=db3a304412b407950112b408e8c90004&fileId=db3a304412b407950112b42c91374727
SPD02N60S5BTMA1
Виробник: Infineon Technologies
Description: MOSFET N-CH 600V 1.8A TO252-3
Packaging: Bulk
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 1.8A (Tc)
Rds On (Max) @ Id, Vgs: 3Ohm @ 1.1A, 10V
Power Dissipation (Max): 25W (Tc)
Vgs(th) (Max) @ Id: 5.5V @ 80µA
Supplier Device Package: PG-TO252-3-11
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 600 V
Gate Charge (Qg) (Max) @ Vgs: 9.5 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 240 pF @ 25 V
на замовлення 13370 шт:
термін постачання 21-31 дні (днів)
Кількість Ціна
568+35.34 грн
Мінімальне замовлення: 568
В кошику  од. на суму  грн.
T7300N85X203A11XPSA1
Виробник: Infineon Technologies
Description: SCR MODULE HP T20235K-1
Packaging: Tray
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IPW60R099CM8XKSA1 DS_IPW60R099CM8_2_0.pdf
IPW60R099CM8XKSA1
Виробник: Infineon Technologies
Description: IPW60R099CM8XKSA1
Packaging: Tape & Reel (TR)
Package / Case: TO-247-3
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 29A (Tc)
Rds On (Max) @ Id, Vgs: 99mOhm @ 10.1A, 10V
Power Dissipation (Max): 176W (Tc)
Vgs(th) (Max) @ Id: 4.7V @ 260µA
Supplier Device Package: PG-TO247-3-U06
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 600 V
Gate Charge (Qg) (Max) @ Vgs: 31 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 1330 pF @ 400 V
на замовлення 334 шт:
термін постачання 21-31 дні (днів)
Кількість Ціна
2+309.80 грн
30+165.74 грн
120+136.65 грн
Мінімальне замовлення: 2
В кошику  од. на суму  грн.
IPW60R055CM8XKSA1 DS_IPW60R055CM8_2_0.pdf
IPW60R055CM8XKSA1
Виробник: Infineon Technologies
Description: IPW60R055CM8XKSA1
Packaging: Tube
Package / Case: TO-247-3
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 44A (Tc)
Rds On (Max) @ Id, Vgs: 55mOhm @ 18.2A, 10V
Power Dissipation (Max): 227W (Tc)
Vgs(th) (Max) @ Id: 4.7V @ 440µA
Supplier Device Package: PG-TO247-3-U06
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 600 V
Gate Charge (Qg) (Max) @ Vgs: 51 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 2245 pF @ 400 V
на замовлення 135 шт:
термін постачання 21-31 дні (днів)
Кількість Ціна
1+406.81 грн
30+222.77 грн
120+185.63 грн
В кошику  од. на суму  грн.
IPW60R024CM8XKSA1 DS_IPW60R024CM8_2_0.pdf
IPW60R024CM8XKSA1
Виробник: Infineon Technologies
Description: IPW60R024CM8XKSA1
Packaging: Tape & Reel (TR)
Package / Case: TO-247-3
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 91A (Tc)
Rds On (Max) @ Id, Vgs: 24mOhm @ 41.7A, 10V
Power Dissipation (Max): 431W (Tc)
Vgs(th) (Max) @ Id: 4.7V @ 1.06mA
Supplier Device Package: PG-TO247-3-U06
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 600 V
Gate Charge (Qg) (Max) @ Vgs: 122 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 5382 pF @ 400 V
на замовлення 359 шт:
термін постачання 21-31 дні (днів)
Кількість Ціна
1+704.10 грн
30+403.77 грн
120+343.63 грн
В кошику  од. на суму  грн.
IPW60R120CM8XKSA1 Infineon-IPW60R120CM8-DataSheet-v02_00-EN.pdf?fileId=8ac78c8c9715623e0197173a9b7930bd
IPW60R120CM8XKSA1
Виробник: Infineon Technologies
Description: IPW60R120CM8XKSA1
Packaging: Tube
Package / Case: TO-247-3
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 23A (Tc)
Rds On (Max) @ Id, Vgs: 120mOhm @ 8.3A, 10V
Power Dissipation (Max): 131W (Tc)
Vgs(th) (Max) @ Id: 4.7V @ 200µA
Supplier Device Package: PG-TO247-3-U06
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 600 V
Gate Charge (Qg) (Max) @ Vgs: 24 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 1045 pF @ 400 V
на замовлення 184 шт:
термін постачання 21-31 дні (днів)
Кількість Ціна
2+287.90 грн
30+152.55 грн
120+125.04 грн
Мінімальне замовлення: 2
В кошику  од. на суму  грн.
IPW60R070CM8XKSA1 Infineon-IPW60R070CM8-DataSheet-v02_01-EN.pdf?fileId=8ac78c8c9715623e0197173dc084331f
IPW60R070CM8XKSA1
Виробник: Infineon Technologies
Description: IPW60R070CM8XKSA1
Packaging: Tube
Package / Case: TO-247-3
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 37A (Tc)
Rds On (Max) @ Id, Vgs: 70mOhm @ 14.3A, 10V
Power Dissipation (Max): 201W (Tc)
Vgs(th) (Max) @ Id: 4.7V @ 360µA
Supplier Device Package: PG-TO247-3-U06
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 600 V
Gate Charge (Qg) (Max) @ Vgs: 43 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 1878 pF @ 400 V
на замовлення 32 шт:
термін постачання 21-31 дні (днів)
Кількість Ціна
1+364.57 грн
30+198.31 грн
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IPP040N08NF2SAKMA1 Infineon-IPP040N08NF2S-DataSheet-v02_00-EN.pdf?fileId=5546d46276c4f5350176f70a2eac169b
IPP040N08NF2SAKMA1
Виробник: Infineon Technologies
Description: TRENCH 40<-<100V
Packaging: Bulk
Package / Case: TO-220-3
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 22A (Ta), 115A (Tc)
Rds On (Max) @ Id, Vgs: 4mOhm @ 80A, 10V
Power Dissipation (Max): 3.8W (Ta), 150W (Tc)
Vgs(th) (Max) @ Id: 3.8V @ 85µA
Supplier Device Package: PG-TO220-3
Drive Voltage (Max Rds On, Min Rds On): 6V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 80 V
Gate Charge (Qg) (Max) @ Vgs: 81 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 3800 pF @ 40 V
на замовлення 250000 шт:
термін постачання 21-31 дні (днів)
Кількість Ціна
189+107.44 грн
Мінімальне замовлення: 189
В кошику  од. на суму  грн.
CYT2B75CADQ0AZEGST Infineon-Traveo_II_CYT2B7_Series-DataSheet-v01_00-EN.pdf?fileId=5546d462749a7c2d01749d90a89b4dc2
CYT2B75CADQ0AZEGST
Виробник: Infineon Technologies
Description: IC MCU 32BT 1.0625MB FLSH 100QFP
Packaging: Cut Tape (CT)
Package / Case: 100-LQFP
Mounting Type: Surface Mount
Speed: 100MHz, 160MHz
Program Memory Size: 1.0625MB (1.0625M x 8)
RAM Size: 128K x 8
Operating Temperature: -40°C ~ 125°C (TA)
Oscillator Type: External, Internal
Program Memory Type: FLASH
EEPROM Size: 96K x 8
Core Processor: ARM® Cortex®-M0+, ARM® Cortex®-M4F
Data Converters: A/D 57x12b SAR
Core Size: 32-Bit Dual-Core
Voltage - Supply (Vcc/Vdd): 2.7V ~ 5.5V
Connectivity: CANbus, FIFO, I2C, IrDA, LINbus, SPI, UART/USART
Peripherals: Brown-out Detect/Reset, Crypto - AES, DMA, LVD, POR, PWM, SHA, TRNG, WDT
Supplier Device Package: 100-LQFP (14x14)
Number of I/O: 78
DigiKey Programmable: Not Verified
на замовлення 500 шт:
термін постачання 21-31 дні (днів)
Кількість Ціна
1+934.11 грн
10+709.96 грн
25+662.47 грн
100+572.76 грн
250+549.43 грн
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S26HS512TGABHI003 Infineon-S26HS256T_S26HS512T_S26HS01GT_S26HL256T_S26HL512T_S26HL01GT_256Mb_512Mb_1Gb_SEMPER_TM_Flash_HYPERBUS_TM_interface_1-DataSheet-v67_00-EN.pdf?fileId=8ac78c8c7d0d8da4017d0ee6a0c96f54
S26HS512TGABHI003
Виробник: Infineon Technologies
Description: IC FLASH 512MBIT HYPERBUS 24FBGA
Packaging: Tape & Reel (TR)
Package / Case: 24-VBGA
Mounting Type: Surface Mount
Memory Size: 512Mbit
Memory Type: Non-Volatile
Operating Temperature: -40°C ~ 85°C (TA)
Voltage - Supply: 1.7V ~ 2V
Technology: FLASH - NOR (SLC)
Clock Frequency: 200 MHz
Memory Format: FLASH
Supplier Device Package: 24-FBGA (8x8)
Write Cycle Time - Word, Page: 1.7ms
Memory Interface: HyperBus
Access Time: 5.45 ns
Memory Organization: 64M x 8
DigiKey Programmable: Not Verified
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S26HL512TFPBHV003 Infineon-S26HS256T_S26HS512T_S26HS01GT_S26HL256T_S26HL512T_S26HL01GT_256Mb_512Mb_1Gb_SEMPER_TM_Flash_HYPERBUS_TM_interface_1-DataSheet-v67_00-EN.pdf?fileId=8ac78c8c7d0d8da4017d0ee6a0c96f54
S26HL512TFPBHV003
Виробник: Infineon Technologies
Description: IC FLASH 512MBIT HYPERBUS 24FBGA
Packaging: Tape & Reel (TR)
Package / Case: 24-VBGA
Mounting Type: Surface Mount
Memory Size: 512Mbit
Memory Type: Non-Volatile
Operating Temperature: -40°C ~ 105°C (TA)
Voltage - Supply: 2.7V ~ 3.6V
Technology: FLASH - NOR (SLC)
Clock Frequency: 166 MHz
Memory Format: FLASH
Supplier Device Package: 24-FBGA (6x8)
Write Cycle Time - Word, Page: 1.7ms
Memory Interface: HyperBus
Access Time: 6.5 ns
Memory Organization: 64M x 8
DigiKey Programmable: Not Verified
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S26HL512TFPBHV013 Infineon-S26HS256T_S26HS512T_S26HS01GT_S26HL256T_S26HL512T_S26HL01GT_256Mb_512Mb_1Gb_SEMPER_TM_Flash_HYPERBUS_TM_interface_1-DataSheet-v67_00-EN.pdf?fileId=8ac78c8c7d0d8da4017d0ee6a0c96f54
S26HL512TFPBHV013
Виробник: Infineon Technologies
Description: IC FLASH 512MBIT HYPERBUS 24FBGA
Packaging: Tape & Reel (TR)
Package / Case: 24-VBGA
Mounting Type: Surface Mount
Memory Size: 512Mbit
Memory Type: Non-Volatile
Operating Temperature: -40°C ~ 105°C (TA)
Voltage - Supply: 2.7V ~ 3.6V
Technology: FLASH - NOR (SLC)
Clock Frequency: 166 MHz
Memory Format: FLASH
Supplier Device Package: 24-FBGA (6x8)
Write Cycle Time - Word, Page: 1.7ms
Memory Interface: HyperBus
Access Time: 6.5 ns
Memory Organization: 64M x 8
DigiKey Programmable: Not Verified
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S26HS512TGABHV013 Infineon-S26HS256T_S26HS512T_S26HS01GT_S26HL256T_S26HL512T_S26HL01GT_256Mb_512Mb_1Gb_SEMPER_TM_Flash_HYPERBUS_TM_interface_1-DataSheet-v67_00-EN.pdf?fileId=8ac78c8c7d0d8da4017d0ee6a0c96f54
S26HS512TGABHV013
Виробник: Infineon Technologies
Description: IC FLASH 512MBIT HYPERBUS 24FBGA
Packaging: Tape & Reel (TR)
Package / Case: 24-VBGA
Mounting Type: Surface Mount
Memory Size: 512Mbit
Memory Type: Non-Volatile
Operating Temperature: -40°C ~ 105°C (TA)
Voltage - Supply: 1.7V ~ 2V
Technology: FLASH - NOR (SLC)
Clock Frequency: 200 MHz
Memory Format: FLASH
Supplier Device Package: 24-FBGA (6x8)
Write Cycle Time - Word, Page: 1.7ms
Memory Interface: HyperBus
Access Time: 5.45 ns
Memory Organization: 64M x 8
DigiKey Programmable: Not Verified
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S28HL512TFPBHV010 S28H%28L%2CS%2901GT_256T_512T_RevA_7-8-19.pdf
S28HL512TFPBHV010
Виробник: Infineon Technologies
Description: IC FLASH 512MBIT SPI/OCTL 24FBGA
Packaging: Tray
Package / Case: 24-VBGA
Mounting Type: Surface Mount
Memory Size: 512Mbit
Memory Type: Non-Volatile
Operating Temperature: -40°C ~ 105°C (TA)
Voltage - Supply: 2.7V ~ 3.6V
Technology: FLASH - NOR (SLC)
Clock Frequency: 166 MHz
Memory Format: FLASH
Supplier Device Package: 24-FBGA (6x8)
Write Cycle Time - Word, Page: 1.7ms
Memory Interface: SPI - Octal I/O
Access Time: 6.5 ns
Memory Organization: 64M x 8
DigiKey Programmable: Not Verified
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S28HL512TFPBHB013 S28H%28L%2CS%2901GT_256T_512T_RevA_7-8-19.pdf
S28HL512TFPBHB013
Виробник: Infineon Technologies
Description: IC FLASH 512MBIT SPI/OCTL 24FBGA
Packaging: Tape & Reel (TR)
Package / Case: 24-VBGA
Mounting Type: Surface Mount
Memory Size: 512Mbit
Memory Type: Non-Volatile
Operating Temperature: -40°C ~ 105°C (TA)
Voltage - Supply: 2.7V ~ 3.6V
Technology: FLASH - NOR (SLC)
Clock Frequency: 166 MHz
Memory Format: FLASH
Supplier Device Package: 24-FBGA (6x8)
Write Cycle Time - Word, Page: 1.7ms
Memory Interface: SPI - Octal I/O
Access Time: 6.5 ns
Memory Organization: 64M x 8
DigiKey Programmable: Not Verified
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S26HL512TFPBHB003 Infineon-S26HS256T_S26HS512T_S26HS01GT_S26HL256T_S26HL512T_S26HL01GT_256Mb_512Mb_1Gb_SEMPER_TM_Flash_HYPERBUS_TM_interface_1-DataSheet-v67_00-EN.pdf?fileId=8ac78c8c7d0d8da4017d0ee6a0c96f54
S26HL512TFPBHB003
Виробник: Infineon Technologies
Description: IC FLASH 512MBIT HYPERBUS 24FBGA
Packaging: Tape & Reel (TR)
Package / Case: 24-VBGA
Mounting Type: Surface Mount
Memory Size: 512Mbit
Memory Type: Non-Volatile
Operating Temperature: -40°C ~ 105°C (TA)
Voltage - Supply: 2.7V ~ 3.6V
Technology: FLASH - NOR (SLC)
Clock Frequency: 166 MHz
Memory Format: FLASH
Supplier Device Package: 24-FBGA (6x8)
Write Cycle Time - Word, Page: 1.7ms
Memory Interface: HyperBus
Access Time: 6.5 ns
Memory Organization: 64M x 8
DigiKey Programmable: Not Verified
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S26HL512TFPBHB013 Infineon-S26HS256T_S26HS512T_S26HS01GT_S26HL256T_S26HL512T_S26HL01GT_256Mb_512Mb_1Gb_SEMPER_TM_Flash_HYPERBUS_TM_interface_1-DataSheet-v67_00-EN.pdf?fileId=8ac78c8c7d0d8da4017d0ee6a0c96f54
S26HL512TFPBHB013
Виробник: Infineon Technologies
Description: IC FLASH 512MBIT HYPERBUS 24FBGA
Packaging: Tape & Reel (TR)
Package / Case: 24-VBGA
Mounting Type: Surface Mount
Memory Size: 512Mbit
Memory Type: Non-Volatile
Operating Temperature: -40°C ~ 105°C (TA)
Voltage - Supply: 2.7V ~ 3.6V
Technology: FLASH - NOR (SLC)
Clock Frequency: 166 MHz
Memory Format: FLASH
Supplier Device Package: 24-FBGA (6x8)
Write Cycle Time - Word, Page: 1.7ms
Memory Interface: HyperBus
Access Time: 6.5 ns
Memory Organization: 64M x 8
DigiKey Programmable: Not Verified
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S26HS512TGABHV010 Infineon-S26HS256T_S26HS512T_S26HS01GT_S26HL256T_S26HL512T_S26HL01GT_256Mb_512Mb_1Gb_SEMPER_TM_Flash_HYPERBUS_TM_interface_1-DataSheet-v67_00-EN.pdf?fileId=8ac78c8c7d0d8da4017d0ee6a0c96f54
S26HS512TGABHV010
Виробник: Infineon Technologies
Description: IC FLASH 512MBIT HYPERBUS 24FBGA
Packaging: Tray
Package / Case: 24-VBGA
Mounting Type: Surface Mount
Memory Size: 512Mbit
Memory Type: Non-Volatile
Operating Temperature: -40°C ~ 105°C (TA)
Voltage - Supply: 1.7V ~ 2V
Technology: FLASH - NOR (SLC)
Clock Frequency: 200 MHz
Memory Format: FLASH
Supplier Device Package: 24-FBGA (6x8)
Write Cycle Time - Word, Page: 1.7ms
Memory Interface: HyperBus
Access Time: 5.45 ns
Memory Organization: 64M x 8
DigiKey Programmable: Not Verified
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S26HL512TFPBHB000 Infineon-S26HS256T_S26HS512T_S26HS01GT_S26HL256T_S26HL512T_S26HL01GT_256Mb_512Mb_1Gb_SEMPER_TM_Flash_HYPERBUS_TM_interface_1-DataSheet-v67_00-EN.pdf?fileId=8ac78c8c7d0d8da4017d0ee6a0c96f54
S26HL512TFPBHB000
Виробник: Infineon Technologies
Description: IC FLASH 512MBIT HYPERBUS 24FBGA
Packaging: Tray
Package / Case: 24-VBGA
Mounting Type: Surface Mount
Memory Size: 512Mbit
Memory Type: Non-Volatile
Operating Temperature: -40°C ~ 105°C (TA)
Voltage - Supply: 2.7V ~ 3.6V
Technology: FLASH - NOR (SLC)
Clock Frequency: 166 MHz
Memory Format: FLASH
Supplier Device Package: 24-FBGA (6x8)
Write Cycle Time - Word, Page: 1.7ms
Memory Interface: HyperBus
Access Time: 6.5 ns
Memory Organization: 64M x 8
DigiKey Programmable: Not Verified
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S26HL512TFPBHM003 Infineon-S26HS256T_S26HS512T_S26HS01GT_S26HL256T_S26HL512T_S26HL01GT_256Mb_512Mb_1Gb_SEMPER_TM_Flash_HYPERBUS_TM_interface_1-DataSheet-v67_00-EN.pdf?fileId=8ac78c8c7d0d8da4017d0ee6a0c96f54
S26HL512TFPBHM003
Виробник: Infineon Technologies
Description: IC FLASH 512MBIT HYPERBUS 24FBGA
Packaging: Tape & Reel (TR)
Package / Case: 24-VBGA
Mounting Type: Surface Mount
Memory Size: 512Mbit
Memory Type: Non-Volatile
Operating Temperature: -40°C ~ 125°C (TA)
Voltage - Supply: 2.7V ~ 3.6V
Technology: FLASH - NOR (SLC)
Clock Frequency: 166 MHz
Memory Format: FLASH
Supplier Device Package: 24-FBGA (6x8)
Write Cycle Time - Word, Page: 1.7ms
Memory Interface: HyperBus
Access Time: 6.5 ns
Memory Organization: 64M x 8
DigiKey Programmable: Not Verified
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S26HL512TFPBHM013 Infineon-S26HS256T_S26HS512T_S26HS01GT_S26HL256T_S26HL512T_S26HL01GT_256Mb_512Mb_1Gb_SEMPER_TM_Flash_HYPERBUS_TM_interface_1-DataSheet-v67_00-EN.pdf?fileId=8ac78c8c7d0d8da4017d0ee6a0c96f54
S26HL512TFPBHM013
Виробник: Infineon Technologies
Description: IC FLASH 512MBIT HYPERBUS 24FBGA
Packaging: Tape & Reel (TR)
Package / Case: 24-VBGA
Mounting Type: Surface Mount
Memory Size: 512Mbit
Memory Type: Non-Volatile
Operating Temperature: -40°C ~ 125°C (TA)
Voltage - Supply: 2.7V ~ 3.6V
Technology: FLASH - NOR (SLC)
Clock Frequency: 166 MHz
Memory Format: FLASH
Supplier Device Package: 24-FBGA (6x8)
Write Cycle Time - Word, Page: 1.7ms
Memory Interface: HyperBus
Access Time: 6.5 ns
Memory Organization: 64M x 8
DigiKey Programmable: Not Verified
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S28HL512TFPBHM013 S28H%28L%2CS%2901GT_256T_512T_RevA_7-8-19.pdf
S28HL512TFPBHM013
Виробник: Infineon Technologies
Description: IC FLASH 512MBIT SPI/OCTL 24FBGA
Packaging: Tape & Reel (TR)
Package / Case: 24-VBGA
Mounting Type: Surface Mount
Memory Size: 512Mbit
Memory Type: Non-Volatile
Operating Temperature: -40°C ~ 125°C (TA)
Voltage - Supply: 2.7V ~ 3.6V
Technology: FLASH - NOR (SLC)
Clock Frequency: 166 MHz
Memory Format: FLASH
Supplier Device Package: 24-FBGA (6x8)
Write Cycle Time - Word, Page: 1.7ms
Memory Interface: SPI - Octal I/O
Access Time: 6.5 ns
Memory Organization: 64M x 8
DigiKey Programmable: Not Verified
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S28HL512TFPBHB010 S28H%28L%2CS%2901GT_256T_512T_RevA_7-8-19.pdf
S28HL512TFPBHB010
Виробник: Infineon Technologies
Description: IC FLASH 512MBIT SPI/OCTL 24FBGA
Packaging: Tray
Package / Case: 24-VBGA
Mounting Type: Surface Mount
Memory Size: 512Mbit
Memory Type: Non-Volatile
Operating Temperature: -40°C ~ 105°C (TA)
Voltage - Supply: 2.7V ~ 3.6V
Technology: FLASH - NOR (SLC)
Clock Frequency: 166 MHz
Memory Format: FLASH
Supplier Device Package: 24-FBGA (6x8)
Write Cycle Time - Word, Page: 1.7ms
Memory Interface: SPI - Octal I/O
Access Time: 6.5 ns
Memory Organization: 64M x 8
DigiKey Programmable: Not Verified
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S26HL512TFPBHB010 Infineon-S26HS256T_S26HS512T_S26HS01GT_S26HL256T_S26HL512T_S26HL01GT_256Mb_512Mb_1Gb_SEMPER_TM_Flash_HYPERBUS_TM_interface_1-DataSheet-v67_00-EN.pdf?fileId=8ac78c8c7d0d8da4017d0ee6a0c96f54
S26HL512TFPBHB010
Виробник: Infineon Technologies
Description: IC FLASH 512MBIT HYPERBUS 24FBGA
Packaging: Tray
Package / Case: 24-VBGA
Mounting Type: Surface Mount
Memory Size: 512Mbit
Memory Type: Non-Volatile
Operating Temperature: -40°C ~ 105°C (TA)
Voltage - Supply: 2.7V ~ 3.6V
Technology: FLASH - NOR (SLC)
Clock Frequency: 166 MHz
Memory Format: FLASH
Supplier Device Package: 24-FBGA (6x8)
Write Cycle Time - Word, Page: 1.7ms
Memory Interface: HyperBus
Access Time: 6.5 ns
Memory Organization: 64M x 8
DigiKey Programmable: Not Verified
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S28HL512TFPBHM010 S28H%28L%2CS%2901GT_256T_512T_RevA_7-8-19.pdf
S28HL512TFPBHM010
Виробник: Infineon Technologies
Description: IC FLASH 512MBIT SPI/OCTL 24FBGA
Packaging: Tray
Package / Case: 24-VBGA
Mounting Type: Surface Mount
Memory Size: 512Mbit
Memory Type: Non-Volatile
Operating Temperature: -40°C ~ 125°C (TA)
Voltage - Supply: 2.7V ~ 3.6V
Technology: FLASH - NOR (SLC)
Clock Frequency: 166 MHz
Memory Format: FLASH
Supplier Device Package: 24-FBGA (6x8)
Write Cycle Time - Word, Page: 1.7ms
Memory Interface: SPI - Octal I/O
Access Time: 6.5 ns
Memory Organization: 64M x 8
DigiKey Programmable: Not Verified
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S26HL512TFPBHM000 Infineon-S26HS256T_S26HS512T_S26HS01GT_S26HL256T_S26HL512T_S26HL01GT_256Mb_512Mb_1Gb_SEMPER_TM_Flash_HYPERBUS_TM_interface_1-DataSheet-v67_00-EN.pdf?fileId=8ac78c8c7d0d8da4017d0ee6a0c96f54
S26HL512TFPBHM000
Виробник: Infineon Technologies
Description: IC FLASH 512MBIT HYPERBUS 24FBGA
Packaging: Tray
Package / Case: 24-VBGA
Mounting Type: Surface Mount
Memory Size: 512Mbit
Memory Type: Non-Volatile
Operating Temperature: -40°C ~ 125°C (TA)
Voltage - Supply: 2.7V ~ 3.6V
Technology: FLASH - NOR (SLC)
Clock Frequency: 166 MHz
Memory Format: FLASH
Supplier Device Package: 24-FBGA (6x8)
Write Cycle Time - Word, Page: 1.7ms
Memory Interface: HyperBus
Access Time: 6.5 ns
Memory Organization: 64M x 8
DigiKey Programmable: Not Verified
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S26HL512TFPBHM010 Infineon-S26HS256T_S26HS512T_S26HS01GT_S26HL256T_S26HL512T_S26HL01GT_256Mb_512Mb_1Gb_SEMPER_TM_Flash_HYPERBUS_TM_interface_1-DataSheet-v67_00-EN.pdf?fileId=8ac78c8c7d0d8da4017d0ee6a0c96f54
S26HL512TFPBHM010
Виробник: Infineon Technologies
Description: IC FLASH 512MBIT HYPERBUS 24FBGA
Packaging: Tray
Package / Case: 24-VBGA
Mounting Type: Surface Mount
Memory Size: 512Mbit
Memory Type: Non-Volatile
Operating Temperature: -40°C ~ 125°C (TA)
Voltage - Supply: 2.7V ~ 3.6V
Technology: FLASH - NOR (SLC)
Clock Frequency: 166 MHz
Memory Format: FLASH
Supplier Device Package: 24-FBGA (6x8)
Write Cycle Time - Word, Page: 1.7ms
Memory Interface: HyperBus
Access Time: 6.5 ns
Memory Organization: 64M x 8
DigiKey Programmable: Not Verified
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S28HL01GTFPBHI033 S28H%28L%2CS%2901GT_256T_512T_RevA_7-8-19.pdf
S28HL01GTFPBHI033
Виробник: Infineon Technologies
Description: IC FLASH 1GBIT SPI/OCTAL 24FBGA
Packaging: Tape & Reel (TR)
Package / Case: 24-VBGA
Mounting Type: Surface Mount
Memory Size: 1Gbit
Memory Type: Non-Volatile
Operating Temperature: -40°C ~ 85°C (TA)
Voltage - Supply: 2.7V ~ 3.6V
Technology: FLASH - NOR (SLC)
Clock Frequency: 166 MHz
Memory Format: FLASH
Supplier Device Package: 24-FBGA (8x8)
Write Cycle Time - Word, Page: 1.7ms
Memory Interface: SPI - Octal I/O
Access Time: 6.5 ns
Memory Organization: 128M x 8
DigiKey Programmable: Not Verified
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