Продукція > INFINEON TECHNOLOGIES > Всі товари виробника INFINEON TECHNOLOGIES (149636) > Сторінка 762 з 2494

Обрати Сторінку:   [  << Попередня Сторінка ]  1 249 498 747 757 758 759 760 761 762 763 764 765 766 767 996 1245 1494 1743 1992 2241 2490 2494  [ Наступна Сторінка >> ]
Фото Назва Виробник Інформація Доступність
Ціна
CY2309ZXC-1H CY2309ZXC-1H Infineon Technologies Infineon-CY2305_CY2309_Low_Cost_3.3_V_Zero_Delay_Buffer-DataSheet-v26_00-EN.pdf?fileId=8ac78c8c7d0d8da4017d0ebe422931ae&utm_source=cypress&utm_medium=referral&utm_campaign=202110_globe_en_all_integration-files Description: IC FANOUT BUFFER 16TSSOP
Packaging: Tube
Package / Case: 16-TSSOP (0.173", 4.40mm Width)
Mounting Type: Surface Mount
Output: LVCMOS
Frequency - Max: 133.33MHz
Type: Fanout Buffer (Distribution), Zero Delay Buffer
Input: LVCMOS, LVTTL
Operating Temperature: 0°C ~ 70°C
Voltage - Supply: 3V ~ 3.6V
Ratio - Input:Output: 1:9
Differential - Input:Output: No/No
Supplier Device Package: 16-TSSOP
PLL: Yes with Bypass
Divider/Multiplier: No/No
Number of Circuits: 1
DigiKey Programmable: Not Verified
товару немає в наявності
В кошику  од. на суму  грн.
CY7B991V-7JXC CY7B991V-7JXC Infineon Technologies download Description: IC CLK BUFFER 8:8 80MHZ 32PLCC
Packaging: Tube
Package / Case: 32-LCC (J-Lead)
Number of Circuits: 1
Mounting Type: Surface Mount
Output: LVTTL
Type: Buffer/Driver
Input: 3-State
Operating Temperature: 0°C ~ 70°C
Voltage - Supply: 2.97V ~ 3.63V
Ratio - Input:Output: 8:8
Differential - Input:Output: Yes/No
Supplier Device Package: 32-PLCC (11.43x13.97)
Frequency - Max: 80 MHz
товару немає в наявності
В кошику  од. на суму  грн.
CY62256VLL-70SNXC CY62256VLL-70SNXC Infineon Technologies CY62256V_RevF.pdf Description: IC SRAM 256KBIT PARALLEL 28SOIC
Packaging: Tube
Package / Case: 28-SOIC (0.295", 7.50mm Width)
Mounting Type: Surface Mount
Memory Size: 256Kbit
Memory Type: Volatile
Operating Temperature: 0°C ~ 70°C (TA)
Voltage - Supply: 2.7V ~ 3.6V
Technology: SRAM - Asynchronous
Memory Format: SRAM
Supplier Device Package: 28-SOIC
Write Cycle Time - Word, Page: 70ns
Memory Interface: Parallel
Access Time: 70 ns
Memory Organization: 32K x 8
DigiKey Programmable: Not Verified
товару немає в наявності
В кошику  од. на суму  грн.
CY7C1021CV33-10ZXC CY7C1021CV33-10ZXC Infineon Technologies CY7C1021CV33%20RevI.pdf Description: IC SRAM 1MBIT PARALLEL 44TSOP II
Packaging: Bag
Package / Case: 44-TSOP (0.400", 10.16mm Width)
Mounting Type: Surface Mount
Memory Size: 1Mbit
Memory Type: Volatile
Operating Temperature: 0°C ~ 70°C (TA)
Voltage - Supply: 3V ~ 3.6V
Technology: SRAM - Asynchronous
Memory Format: SRAM
Supplier Device Package: 44-TSOP II
Write Cycle Time - Word, Page: 10ns
Memory Interface: Parallel
Access Time: 10 ns
Memory Organization: 64K x 16
DigiKey Programmable: Not Verified
товару немає в наявності
В кошику  од. на суму  грн.
CY7C1021CV33-15ZXC CY7C1021CV33-15ZXC Infineon Technologies CY7C1021CV33%20RevI.pdf Description: IC SRAM 1MBIT PARALLEL 44TSOP II
Packaging: Bag
Package / Case: 44-TSOP (0.400", 10.16mm Width)
Mounting Type: Surface Mount
Memory Size: 1Mbit
Memory Type: Volatile
Operating Temperature: 0°C ~ 70°C (TA)
Voltage - Supply: 3V ~ 3.6V
Technology: SRAM - Asynchronous
Memory Format: SRAM
Supplier Device Package: 44-TSOP II
Write Cycle Time - Word, Page: 15ns
Memory Interface: Parallel
Access Time: 15 ns
Memory Organization: 64K x 16
DigiKey Programmable: Not Verified
товару немає в наявності
В кошику  од. на суму  грн.
IGOT65R045D2AUMA1 IGOT65R045D2AUMA1 Infineon Technologies Infineon-IGOT65R045D2-DataSheet-v01_00-EN.pdf?fileId=8ac78c8c8eeb092c018f0a57b4b50301 Description: IGOT65R045D2AUMA1
Packaging: Tape & Reel (TR)
Package / Case: 20-BFSOP (0.295", 7.50mm Width)
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: GaNFET (Gallium Nitride)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 34A (Tc)
Power Dissipation (Max): 109W (Tc)
Vgs(th) (Max) @ Id: 1.6V @ 3.3mA
Supplier Device Package: PG-DSO-20-91
Vgs (Max): -10V
Drain to Source Voltage (Vdss): 650 V
Gate Charge (Qg) (Max) @ Vgs: 6 nC @ 3 V
Input Capacitance (Ciss) (Max) @ Vds: 430 pF @ 400 V
товару немає в наявності
В кошику  од. на суму  грн.
IGOT65R045D2AUMA1 IGOT65R045D2AUMA1 Infineon Technologies Infineon-IGOT65R045D2-DataSheet-v01_00-EN.pdf?fileId=8ac78c8c8eeb092c018f0a57b4b50301 Description: IGOT65R045D2AUMA1
Packaging: Cut Tape (CT)
Package / Case: 20-BFSOP (0.295", 7.50mm Width)
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: GaNFET (Gallium Nitride)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 34A (Tc)
Power Dissipation (Max): 109W (Tc)
Vgs(th) (Max) @ Id: 1.6V @ 3.3mA
Supplier Device Package: PG-DSO-20-91
Vgs (Max): -10V
Drain to Source Voltage (Vdss): 650 V
Gate Charge (Qg) (Max) @ Vgs: 6 nC @ 3 V
Input Capacitance (Ciss) (Max) @ Vds: 430 pF @ 400 V
товару немає в наявності
В кошику  од. на суму  грн.
IGLT65R025D2AUMA1 IGLT65R025D2AUMA1 Infineon Technologies Infineon-IGLT65R025D2-DataSheet-v01_00-EN.pdf?fileId=8ac78c8c8eeb092c018f0a2bda5d7275 Description: IGLT65R025D2AUMA1
Packaging: Tape & Reel (TR)
Package / Case: 16-PowerSOP Module
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: GaNFET (Gallium Nitride)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 67A (Tc)
Power Dissipation (Max): 219W (Tc)
Vgs(th) (Max) @ Id: 1.6V @ 6.1mA
Supplier Device Package: PG-HDSOP-16-8
Vgs (Max): -10V
Drain to Source Voltage (Vdss): 650 V
Gate Charge (Qg) (Max) @ Vgs: 11 nC @ 3 V
Input Capacitance (Ciss) (Max) @ Vds: 780 pF @ 400 V
товару немає в наявності
В кошику  од. на суму  грн.
IGLT65R025D2AUMA1 IGLT65R025D2AUMA1 Infineon Technologies Infineon-IGLT65R025D2-DataSheet-v01_00-EN.pdf?fileId=8ac78c8c8eeb092c018f0a2bda5d7275 Description: IGLT65R025D2AUMA1
Packaging: Cut Tape (CT)
Package / Case: 16-PowerSOP Module
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: GaNFET (Gallium Nitride)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 67A (Tc)
Power Dissipation (Max): 219W (Tc)
Vgs(th) (Max) @ Id: 1.6V @ 6.1mA
Supplier Device Package: PG-HDSOP-16-8
Vgs (Max): -10V
Drain to Source Voltage (Vdss): 650 V
Gate Charge (Qg) (Max) @ Vgs: 11 nC @ 3 V
Input Capacitance (Ciss) (Max) @ Vds: 780 pF @ 400 V
товару немає в наявності
В кошику  од. на суму  грн.
IGOT65R025D2AUMA1 IGOT65R025D2AUMA1 Infineon Technologies Infineon-IGOT65R025D2-DataSheet-v01_00-EN.pdf?fileId=8ac78c8c8eeb092c018f0a57aa7202fb Description: IGOT65R025D2AUMA1
Packaging: Tape & Reel (TR)
Package / Case: 20-BFSOP (0.295", 7.50mm Width)
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: GaNFET (Gallium Nitride)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 61A (Tc)
Power Dissipation (Max): 184W (Tc)
Vgs(th) (Max) @ Id: 1.6V @ 6.1mA
Supplier Device Package: PG-DSO-20-91
Vgs (Max): -10V
Drain to Source Voltage (Vdss): 650 V
Gate Charge (Qg) (Max) @ Vgs: 11 nC @ 3 V
Input Capacitance (Ciss) (Max) @ Vds: 780 pF @ 400 V
товару немає в наявності
В кошику  од. на суму  грн.
IGOT65R025D2AUMA1 IGOT65R025D2AUMA1 Infineon Technologies Infineon-IGOT65R025D2-DataSheet-v01_00-EN.pdf?fileId=8ac78c8c8eeb092c018f0a57aa7202fb Description: IGOT65R025D2AUMA1
Packaging: Cut Tape (CT)
Package / Case: 20-BFSOP (0.295", 7.50mm Width)
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: GaNFET (Gallium Nitride)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 61A (Tc)
Power Dissipation (Max): 184W (Tc)
Vgs(th) (Max) @ Id: 1.6V @ 6.1mA
Supplier Device Package: PG-DSO-20-91
Vgs (Max): -10V
Drain to Source Voltage (Vdss): 650 V
Gate Charge (Qg) (Max) @ Vgs: 11 nC @ 3 V
Input Capacitance (Ciss) (Max) @ Vds: 780 pF @ 400 V
на замовлення 546 шт:
термін постачання 21-31 дні (днів)
1+880.65 грн
10+590.50 грн
100+509.04 грн
В кошику  од. на суму  грн.
S6E1C12C0AGV20000 S6E1C12C0AGV20000 Infineon Technologies Infineon-S6E1C32D0AGN20050-DataSheet-v01_00-EN.pdf?fileId=8ac78c8c81ae03fc0181ec33e75c2c49 Description: IC MCU 32BIT 128KB FLASH 48LQFP
Packaging: Tray
Package / Case: 48-LQFP
Mounting Type: Surface Mount
Speed: 40MHz
Program Memory Size: 128KB (128K x 8)
RAM Size: 16K x 8
Operating Temperature: -40°C ~ 105°C (TA)
Oscillator Type: Internal
Program Memory Type: FLASH
Core Processor: ARM® Cortex®-M0+
Data Converters: A/D 8x12b
Core Size: 32-Bit Single-Core
Voltage - Supply (Vcc/Vdd): 1.65V ~ 3.6V
Connectivity: CSIO, I2C, LINbus, SmartCard, UART/USART
Peripherals: I2S, LVD, POR, PWM, WDT
Supplier Device Package: 48-LQFP (7x7)
Number of I/O: 38
DigiKey Programmable: Not Verified
на замовлення 2466 шт:
термін постачання 21-31 дні (днів)
2+263.94 грн
10+191.83 грн
25+176.13 грн
100+149.07 грн
250+141.35 грн
500+136.69 грн
1000+130.68 грн
Мінімальне замовлення: 2
В кошику  од. на суму  грн.
DEMOFX3LVDSCAM01TOBO1 DEMOFX3LVDSCAM01TOBO1 Infineon Technologies Infineon-DEMO_FX3_LVDS_CAM01_EZ-USB_FX3_BT-UserManual-v03_00-EN.pdf?fileId=8ac78c8c8b6555fe018c1531687808ca Description: DEMOFX3LVDSCAM01TOBO1
Packaging: Box
Interface: GPIO, I2C, I2S, SPI, UART, USB
Contents: Board(s)
Voltage - Supply: 1.7V ~ 3.6V
Sensor Type: Image Sensor
Utilized IC / Part: CYUSB3014
Embedded: No
на замовлення 1 шт:
термін постачання 21-31 дні (днів)
1+34574.25 грн
В кошику  од. на суму  грн.
KITLGPWRBOM007TOBO1 KITLGPWRBOM007TOBO1 Infineon Technologies Infineon-UserManual_LVDSPD_low_voltage_drives_scalable_power_demonstration_board-UM-v01_00-EN.pdf?fileId=5546d462696dbf120169b58bda49538e Description: EVAL POWER BOARD 200V
Packaging: Box
Function: Half H-Bridge Driver (Internal FET)
Type: Power Management
Contents: Board(s)
на замовлення 5 шт:
термін постачання 21-31 дні (днів)
1+5444.07 грн
В кошику  од. на суму  грн.
KITTVSDIODE7TOBO1 KITTVSDIODE7TOBO1 Infineon Technologies Description: KIT SAMPLE TVS FOR RF/ANT PROT
Packaging: Box
Mounting Type: Surface Mount
Quantity: 112 Pieces (8 Values - Mixed Quantities)
Kit Type: ESD Protection
Voltage - Breakdown: 3.3V ~ 70V
товару немає в наявності
В кошику  од. на суму  грн.
ISC018N08NM6ATMA1 ISC018N08NM6ATMA1 Infineon Technologies Infineon-ISC018N08NM6-DataSheet-v02_00-EN.pdf?fileId=8ac78c8c8c3de074018c3f9382112e16 Description: TRENCH 40<-<100V
Packaging: Tape & Reel (TR)
товару немає в наявності
В кошику  од. на суму  грн.
T460N22TOFXPSA1 T460N22TOFXPSA1 Infineon Technologies Infineon-T460N-DS-v01_00-en_de.pdf?fileId=db3a304323b87bc20123ffc158c25c0d Description: SCR MODULE 2.6KV 1000A DO-200AB
Packaging: Tray
Package / Case: DO-200AB, B-PUK
Mounting Type: Clamp On
Operating Temperature: -40°C ~ 125°C
Structure: Single
Current - Hold (Ih) (Max): 200 mA
Current - Gate Trigger (Igt) (Max): 250 mA
Current - Non Rep. Surge 50, 60Hz (Itsm): 10000A @ 50Hz
Number of SCRs, Diodes: 1 SCR
Current - On State (It (AV)) (Max): 460 A
Voltage - Gate Trigger (Vgt) (Max): 1.5 V
Current - On State (It (RMS)) (Max): 1000 A
Voltage - Off State: 2.6 kV
товару немає в наявності
В кошику  од. на суму  грн.
T460N24TOFXPSA1 T460N24TOFXPSA1 Infineon Technologies Infineon-T460N-DS-v01_00-en_de.pdf?fileId=db3a304323b87bc20123ffc158c25c0d Description: SCR MODULE 2.6KV 1000A DO-200AB
Packaging: Tray
Package / Case: DO-200AB, B-PUK
Mounting Type: Clamp On
Operating Temperature: -40°C ~ 125°C
Structure: Single
Current - Hold (Ih) (Max): 200 mA
Current - Gate Trigger (Igt) (Max): 250 mA
Current - Non Rep. Surge 50, 60Hz (Itsm): 10000A @ 50Hz
Number of SCRs, Diodes: 1 SCR
Current - On State (It (AV)) (Max): 460 A
Voltage - Gate Trigger (Vgt) (Max): 1.5 V
Current - On State (It (RMS)) (Max): 1000 A
Voltage - Off State: 2.6 kV
товару немає в наявності
В кошику  од. на суму  грн.
XMC1100T016X0200ABXUMA1 Infineon Technologies Description: IC MCU
Packaging: Tape & Reel (TR)
DigiKey Programmable: Not Verified
товару немає в наявності
В кошику  од. на суму  грн.
IDK02G65C5XTMA2 IDK02G65C5XTMA2 Infineon Technologies Infineon-IDK02G65C5-DS-v02_00-en.pdf?fileId=db3a304342c787030142e6f880f921bd Description: DIODE SIL CARB 650V 2A PGTO2632
Packaging: Tape & Reel (TR)
Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
Mounting Type: Surface Mount
Speed: No Recovery Time > 500mA (Io)
Reverse Recovery Time (trr): 0 ns
Technology: SiC (Silicon Carbide) Schottky
Capacitance @ Vr, F: 70pF @ 1V, 1MHz
Current - Average Rectified (Io): 2A
Supplier Device Package: PG-TO263-2
Operating Temperature - Junction: -55°C ~ 175°C
Voltage - DC Reverse (Vr) (Max): 650 V
Voltage - Forward (Vf) (Max) @ If: 1.8 V @ 2 A
Current - Reverse Leakage @ Vr: 330 µA @ 650 V
товару немає в наявності
В кошику  од. на суму  грн.
IDK02G65C5XTMA2 IDK02G65C5XTMA2 Infineon Technologies Infineon-IDK02G65C5-DS-v02_00-en.pdf?fileId=db3a304342c787030142e6f880f921bd Description: DIODE SIL CARB 650V 2A PGTO2632
Packaging: Cut Tape (CT)
Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
Mounting Type: Surface Mount
Speed: No Recovery Time > 500mA (Io)
Reverse Recovery Time (trr): 0 ns
Technology: SiC (Silicon Carbide) Schottky
Capacitance @ Vr, F: 70pF @ 1V, 1MHz
Current - Average Rectified (Io): 2A
Supplier Device Package: PG-TO263-2
Operating Temperature - Junction: -55°C ~ 175°C
Voltage - DC Reverse (Vr) (Max): 650 V
Voltage - Forward (Vf) (Max) @ If: 1.8 V @ 2 A
Current - Reverse Leakage @ Vr: 330 µA @ 650 V
товару немає в наявності
В кошику  од. на суму  грн.
FP15R12KE3GBOSA1 FP15R12KE3GBOSA1 Infineon Technologies Infineon-FP15R12KE3G-DS-v03_02-en_de.pdf?fileId=db3a304412b407950112b430a8c95181 Description: IGBT MOD 1200V 25A 105W
Packaging: Bulk
Package / Case: Module
Mounting Type: Chassis Mount
Input: Standard
Configuration: Three Phase Inverter
Operating Temperature: -40°C ~ 125°C
Vce(on) (Max) @ Vge, Ic: 2.15V @ 15V, 15A
NTC Thermistor: Yes
Supplier Device Package: Module
IGBT Type: Trench Field Stop
Current - Collector (Ic) (Max): 25 A
Voltage - Collector Emitter Breakdown (Max): 1200 V
Power - Max: 105 W
Current - Collector Cutoff (Max): 1 mA
Input Capacitance (Cies) @ Vce: 1.1 nF @ 25 V
на замовлення 3 шт:
термін постачання 21-31 дні (днів)
1+4494.53 грн
В кошику  од. на суму  грн.
FS75R12KT4B11BOSA1 FS75R12KT4B11BOSA1 Infineon Technologies Infineon-FS75R12KT4_B11-DS-v03_00-en_de.pdf?fileId=db3a30431a47d73d011a49691bbc0130 Description: IGBT MOD 1200V 75A 385W MOD
Packaging: Bulk
Package / Case: Module
Mounting Type: Chassis Mount
Input: Standard
Configuration: Three Phase Inverter
Operating Temperature: -40°C ~ 150°C
Vce(on) (Max) @ Vge, Ic: 2.15V @ 15V, 75A
NTC Thermistor: Yes
Supplier Device Package: Module
IGBT Type: Trench Field Stop
Current - Collector (Ic) (Max): 75 A
Voltage - Collector Emitter Breakdown (Max): 1200 V
Power - Max: 385 W
Current - Collector Cutoff (Max): 1 mA
Input Capacitance (Cies) @ Vce: 4.3 nF @ 25 V
на замовлення 2 шт:
термін постачання 21-31 дні (днів)
2+10753.25 грн
Мінімальне замовлення: 2
В кошику  од. на суму  грн.
FF450R17IE4BOSA2 FF450R17IE4BOSA2 Infineon Technologies Infineon-FF450R17IE4-DS-v03_01-en_de.pdf?fileId=db3a30431ff98815012023af4c1b5a9f Description: IGBT MOD 1700V 620A 2800W
Packaging: Tray
Package / Case: Module
Mounting Type: Chassis Mount
Input: Standard
Configuration: 2 Independent
Operating Temperature: -40°C ~ 150°C
Vce(on) (Max) @ Vge, Ic: 2.45V @ 15V, 450A
NTC Thermistor: Yes
Supplier Device Package: Module
Current - Collector (Ic) (Max): 620 A
Voltage - Collector Emitter Breakdown (Max): 1700 V
Power - Max: 2800 W
Current - Collector Cutoff (Max): 5 mA
Input Capacitance (Cies) @ Vce: 36 nF @ 25 V
товару немає в наявності
В кошику  од. на суму  грн.
FS450R17KE4BOSA1 FS450R17KE4BOSA1 Infineon Technologies Infineon-FS450R17KE4-DS-v02_01-en_de.pdf?fileId=db3a30431f848401011fb30c0c1e4ff6 Description: IGBT MOD 1700V 600A 2500W
Packaging: Tray
Package / Case: Module
Mounting Type: Chassis Mount
Input: Standard
Configuration: Full Bridge
Operating Temperature: -40°C ~ 150°C
Vce(on) (Max) @ Vge, Ic: 2.3V @ 15V, 450A
NTC Thermistor: Yes
Supplier Device Package: Module
IGBT Type: Trench Field Stop
Current - Collector (Ic) (Max): 600 A
Voltage - Collector Emitter Breakdown (Max): 1700 V
Power - Max: 2500 W
Current - Collector Cutoff (Max): 3 mA
Input Capacitance (Cies) @ Vce: 36 nF @ 25 V
товару немає в наявності
В кошику  од. на суму  грн.
IRLML6302TR IRLML6302TR Infineon Technologies IRLML6302.pdf Description: MOSFET P-CH 20V 780MA SOT-23
Packaging: Cut Tape (CT)
Package / Case: TO-236-3, SC-59, SOT-23-3
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 155°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: P-Channel
Current - Continuous Drain (Id) @ 25°C: 780mA (Ta)
Rds On (Max) @ Id, Vgs: 600mOhm @ 610mA, 4.5V
Power Dissipation (Max): 540mW (Ta)
Vgs(th) (Max) @ Id: 1.5V @ 250µA
Supplier Device Package: SOT-23-3 (TO-236)
Drive Voltage (Max Rds On, Min Rds On): 2.7V, 4.5V
Vgs (Max): ±12V
Drain to Source Voltage (Vdss): 20 V
Gate Charge (Qg) (Max) @ Vgs: 3.6 nC @ 4.45 V
Input Capacitance (Ciss) (Max) @ Vds: 97 pF @ 15 V
товару немає в наявності
В кошику  од. на суму  грн.
CY95F698KNPMC-GXXXUNERE2 CY95F698KNPMC-GXXXUNERE2 Infineon Technologies infineon-mb95690k-series-new-8fx-8-bit-microcontrollers-datasheet-en.pdf?fileId=8ac78c8c7d0d8da4017d0edd8b976206 Description: IC MCU 8BIT 60KB 48LQFP
Packaging: Tape & Reel (TR)
Package / Case: 48-LQFP
Mounting Type: Surface Mount
Speed: 16.25MHz
Program Memory Size: 60KB (60K x 8)
RAM Size: 2K x 8
Operating Temperature: -40°C ~ 85°C (TA)
Oscillator Type: External, Internal
Program Memory Type: FLASH
Core Processor: F²MC-8FX
Data Converters: A/D 12x8/10b
Core Size: 8-Bit
Voltage - Supply (Vcc/Vdd): 2.88V ~ 5.5V
Connectivity: I2C, LINbus, SIO, UART/USART
Peripherals: LVD, LVR, POR, PWM, WDT
Supplier Device Package: 48-LQFP (7x7)
Number of I/O: 45
товару немає в наявності
В кошику  од. на суму  грн.
S25FL512SAGBHBC13 S25FL512SAGBHBC13 Infineon Technologies Infineon-S25FL512S_512_Mb_(64_MB)_3.0_V_SPI_Flash_Memory-DataSheet-v19_00-EN.pdf?fileId=8ac78c8c7d0d8da4017d0ed046ae4b53&utm_source=cypress&utm_medium=referral&utm_campaign=202110_globe_en_all_integration-files Description: IC FLASH 512MBIT SPI/QUAD 24BGA
Packaging: Tape & Reel (TR)
Package / Case: 24-TBGA
Mounting Type: Surface Mount
Memory Size: 512Mbit
Memory Type: Non-Volatile
Operating Temperature: -40°C ~ 105°C (TA)
Voltage - Supply: 2.7V ~ 3.6V
Technology: FLASH - NOR
Clock Frequency: 133 MHz
Memory Format: FLASH
Supplier Device Package: 24-BGA (8x6)
Grade: Automotive
Memory Interface: SPI - Quad I/O
Memory Organization: 64M x 8
DigiKey Programmable: Not Verified
Qualification: AEC-Q100
товару немає в наявності
В кошику  од. на суму  грн.
S25HL512TDPMHM010 S25HL512TDPMHM010 Infineon Technologies en?dcId=8a8181663431cb50013431cb500b0000&downloadTitle=Infineon-S25HS256T_S25HS512T_S25HS01GT_S25HL256T_S25HL512T_S25HL01GT_256Mb_512Mb_1Gb_SEMPER_TM_Flash_Quad_SPI_1_8V_3-DataSheet-v68_00-EN.pdf&download=L2RnZGwvSW5maW5lb24 Description: IC FLASH 512MBIT SPI/QUAD 16SOIC
Packaging: Tray
Package / Case: 16-SOIC (0.295", 7.50mm Width)
Mounting Type: Surface Mount
Memory Size: 512Mbit
Memory Type: Non-Volatile
Operating Temperature: -40°C ~ 125°C (TA)
Voltage - Supply: 2.7V ~ 3.6V
Technology: FLASH - NOR (SLC)
Clock Frequency: 133 MHz
Memory Format: FLASH
Supplier Device Package: 16-SOIC
Memory Interface: SPI - Quad I/O, QPI
Memory Organization: 64M x 8
DigiKey Programmable: Not Verified
товару немає в наявності
В кошику  од. на суму  грн.
FS100R12KE3BOSA1 FS100R12KE3BOSA1 Infineon Technologies Infineon-FS100R12KE3-DS-v03_01-en_de.pdf?fileId=db3a304412b407950112b4310be95324 Description: IGBT MOD 1200V 140A 480W MOD
Packaging: Tray
Package / Case: Module
Mounting Type: Chassis Mount
Input: Standard
Configuration: Single
Operating Temperature: -40°C ~ 125°C (TJ)
Vce(on) (Max) @ Vge, Ic: 2.15V @ 15V, 100A
NTC Thermistor: No
Supplier Device Package: Module
IGBT Type: NPT
Current - Collector (Ic) (Max): 140 A
Voltage - Collector Emitter Breakdown (Max): 1200 V
Power - Max: 480 W
Current - Collector Cutoff (Max): 5 mA
Input Capacitance (Cies) @ Vce: 7.1 nF @ 25 V
на замовлення 9 шт:
термін постачання 21-31 дні (днів)
1+7580.52 грн
В кошику  од. на суму  грн.
PEF3101FV1.3 PEF3101FV1.3 Infineon Technologies Description: DUSLIC: SINGLE CHANNEL SLIC
Packaging: Bulk
на замовлення 9000 шт:
термін постачання 21-31 дні (днів)
48+464.12 грн
Мінімальне замовлення: 48
В кошику  од. на суму  грн.
IRF7304TR IRF7304TR Infineon Technologies IRF7304.pdf Description: MOSFET 2P-CH 20V 4.3A 8SO
Packaging: Tape & Reel (TR)
Package / Case: 8-SOIC (0.154", 3.90mm Width)
Mounting Type: Surface Mount
Configuration: 2 P-Channel (Dual)
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
Power - Max: 2W
Drain to Source Voltage (Vdss): 20V
Current - Continuous Drain (Id) @ 25°C: 4.3A
Input Capacitance (Ciss) (Max) @ Vds: 610pF @ 15V
Rds On (Max) @ Id, Vgs: 90mOhm @ 2.2A, 4.5V
Gate Charge (Qg) (Max) @ Vgs: 22nC @ 4.5V
FET Feature: Logic Level Gate
Vgs(th) (Max) @ Id: 700mV @ 250µA
Supplier Device Package: 8-SO
товару немає в наявності
В кошику  од. на суму  грн.
TLE4802SC16S0000XUMA1 TLE4802SC16S0000XUMA1 Infineon Technologies Infineon-TLE4802SC16-S0000-DataSheet-v01_00-EN.pdf?fileId=8ac78c8c93dda25b0194ff40e21e01fb Description: TLE4802SC16S0000XUMA1
Packaging: Tape & Reel (TR)
Package / Case: 16-TSSOP (0.173", 4.40mm Width)
Mounting Type: Surface Mount
Output: SPC
Operating Temperature: -40°C ~ 150°C
Termination Style: SMD (SMT) Tab
Voltage - Supply: 4.4V ~ 6V
Actuator Type: External Magnet, Not Included
Technology: Inductive
For Measuring: Angle
Supplier Device Package: PG-TSSOP-16
Rotation Angle - Electrical, Mechanical: 0° ~ 360°
Output Signal: Clockwise Increase
Grade: Automotive
Qualification: AEC-Q100
товару немає в наявності
В кошику  од. на суму  грн.
TLE4802SC16S0000XUMA1 TLE4802SC16S0000XUMA1 Infineon Technologies Infineon-TLE4802SC16-S0000-DataSheet-v01_00-EN.pdf?fileId=8ac78c8c93dda25b0194ff40e21e01fb Description: TLE4802SC16S0000XUMA1
Packaging: Cut Tape (CT)
Package / Case: 16-TSSOP (0.173", 4.40mm Width)
Mounting Type: Surface Mount
Output: SPC
Operating Temperature: -40°C ~ 150°C
Termination Style: SMD (SMT) Tab
Voltage - Supply: 4.4V ~ 6V
Actuator Type: External Magnet, Not Included
Technology: Inductive
For Measuring: Angle
Supplier Device Package: PG-TSSOP-16
Rotation Angle - Electrical, Mechanical: 0° ~ 360°
Output Signal: Clockwise Increase
Grade: Automotive
Qualification: AEC-Q100
на замовлення 290 шт:
термін постачання 21-31 дні (днів)
1+377.66 грн
5+326.74 грн
10+312.92 грн
25+278.28 грн
50+267.77 грн
100+258.13 грн
В кошику  од. на суму  грн.
IRG7PSH54K10DPBF IRG7PSH54K10DPBF Infineon Technologies IRG7PSH54K10DPbF.pdf Description: IGBT 1200V 120A SUPER-247
Packaging: Tube
Package / Case: TO-274AA
Mounting Type: Through Hole
Operating Temperature: -40°C ~ 150°C (TJ)
Input Type: Standard
Reverse Recovery Time (trr): 170 ns
Vce(on) (Max) @ Vge, Ic: 2.4V @ 15V, 50A
Supplier Device Package: SUPER-247™ (TO-274AA)
Td (on/off) @ 25°C: 110ns/490ns
Switching Energy: 4.8mJ (on), 2.8mJ (off)
Test Condition: 600V, 50A, 5Ohm, 15V
Gate Charge: 435 nC
Current - Collector (Ic) (Max): 120 A
Voltage - Collector Emitter Breakdown (Max): 1200 V
Current - Collector Pulsed (Icm): 200 A
Power - Max: 520 W
товару немає в наявності
В кошику  од. на суму  грн.
S28HS512TGABHB013 S28HS512TGABHB013 Infineon Technologies S28H%28L%2CS%2901GT_256T_512T_RevA_7-8-19.pdf Description: IC FLASH 512MBIT SPI/OCTL 24FBGA
Packaging: Tape & Reel (TR)
Package / Case: 24-VBGA
Mounting Type: Surface Mount
Memory Size: 512Mbit
Memory Type: Non-Volatile
Operating Temperature: -40°C ~ 105°C (TA)
Voltage - Supply: 1.7V ~ 2V
Technology: FLASH - NOR (SLC)
Clock Frequency: 200 MHz
Memory Format: FLASH
Supplier Device Package: 24-FBGA (6x8)
Write Cycle Time - Word, Page: 1.7ms
Memory Interface: SPI - Octal I/O
Access Time: 5.45 ns
Memory Organization: 64M x 8
DigiKey Programmable: Not Verified
товару немає в наявності
В кошику  од. на суму  грн.
S28HS512TGABHB010 S28HS512TGABHB010 Infineon Technologies S28H%28L%2CS%2901GT_256T_512T_RevA_7-8-19.pdf Description: IC FLASH 512MBIT SPI/OCTL 24FBGA
Packaging: Tray
Package / Case: 24-VBGA
Mounting Type: Surface Mount
Memory Size: 512Mbit
Memory Type: Non-Volatile
Operating Temperature: -40°C ~ 105°C (TA)
Voltage - Supply: 1.7V ~ 2V
Technology: FLASH - NOR (SLC)
Clock Frequency: 200 MHz
Memory Format: FLASH
Supplier Device Package: 24-FBGA (6x8)
Write Cycle Time - Word, Page: 1.7ms
Memory Interface: SPI - Octal I/O
Access Time: 5.45 ns
Memory Organization: 64M x 8
DigiKey Programmable: Not Verified
товару немає в наявності
В кошику  од. на суму  грн.
CY8CPLC10-28PVXI CY8CPLC10-28PVXI Infineon Technologies Infineon-CY8CPLC10_Powerline_Communication_Solution-DataSheet-v15_00-EN.pdf?fileId=8ac78c8c7d0d8da4017d0eca76724344&utm_source=cypress&utm_medium=referral&utm_campaign=202110_globe_en_all_integration-files Description: IC PLC PSOC CMOS 28SSOP
Packaging: Tube
Package / Case: 28-SSOP (0.209", 5.30mm Width)
Mounting Type: Surface Mount
Baud Rates: 2.4k
Voltage - Supply: 4.75V ~ 5.25V
Supplier Device Package: 28-SSOP
на замовлення 141 шт:
термін постачання 21-31 дні (днів)
1+1244.19 грн
10+951.45 грн
47+855.94 грн
141+759.52 грн
В кошику  од. на суму  грн.
CY3236A-PIRMOTION CY3236A-PIRMOTION Infineon Technologies CY3236A-PIRMOTION_EVALkit_Gde.pdf Description: KIT PIR MOTION DETECT
Packaging: Box
Sensitivity: Adjustable
Interface: Relay
Contents: Board(s), Cable(s), Power Supply
Voltage - Supply: 12V
Sensor Type: Motion, Pyroelectric, PIR (Passive Infrared)
Utilized IC / Part: CY8C27443-24PVXI
Embedded: Yes, MCU, 8-Bit
товару немає в наявності
В кошику  од. на суму  грн.
STT1400N16P55HPSA1 STT1400N16P55HPSA1 Infineon Technologies Infineon-STT1400N16P55-DS-v03_01-EN.pdf?fileId=5546d4625fe36784015ffc220d0b1754 Description: SCR MODULE 1.6KV MODULE
Packaging: Tray
Package / Case: Module
Mounting Type: Chassis Mount
Operating Temperature: 125°C (TJ)
Structure: 1-Phase Controller - All SCRs
Current - Hold (Ih) (Max): 300 mA
Current - Gate Trigger (Igt) (Max): 200 mA
Current - Non Rep. Surge 50, 60Hz (Itsm): 10500A @ 50Hz
Number of SCRs, Diodes: 2 SCRs
Voltage - Gate Trigger (Vgt) (Max): 2 V
Voltage - Off State: 1.6 kV
товару немає в наявності
В кошику  од. на суму  грн.
AUIRF1010EZS AUIRF1010EZS Infineon Technologies auirf1010ez.pdf?fileId=5546d462533600a4015355a891b01360 Description: MOSFET N-CH 60V 75A D2PAK
Packaging: Tube
Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 75A (Tc)
Rds On (Max) @ Id, Vgs: 8.5mOhm @ 51A, 10V
Power Dissipation (Max): 140W (Tc)
Vgs(th) (Max) @ Id: 4V @ 250µA
Supplier Device Package: PG-TO263-3
Grade: Automotive
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 60 V
Gate Charge (Qg) (Max) @ Vgs: 86 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 2810 pF @ 25 V
Qualification: AEC-Q101
товару немає в наявності
В кошику  од. на суму  грн.
CY7C1041CV33-15ZXC CY7C1041CV33-15ZXC Infineon Technologies CY7C1041CV33%20RevH.pdf Description: IC SRAM 4MBIT PARALLEL 44TSOP II
Packaging: Bag
Package / Case: 44-TSOP (0.400", 10.16mm Width)
Mounting Type: Surface Mount
Memory Size: 4Mbit
Memory Type: Volatile
Operating Temperature: 0°C ~ 70°C (TA)
Voltage - Supply: 3V ~ 3.6V
Technology: SRAM - Asynchronous
Memory Format: SRAM
Supplier Device Package: 44-TSOP II
Write Cycle Time - Word, Page: 15ns
Memory Interface: Parallel
Access Time: 15 ns
Memory Organization: 256K x 16
DigiKey Programmable: Not Verified
товару немає в наявності
В кошику  од. на суму  грн.
PBL38640/2SOA PBL38640/2SOA Infineon Technologies PBL38640%2C2.pdf Description: IC TELECOM INTERFACE PDSO-24
Packaging: Tape & Reel (TR)
Package / Case: 24-SOIC (0.295", 7.50mm Width)
Mounting Type: Surface Mount
Function: Subscriber Line Interface Concept (SLIC)
Operating Temperature: -40°C ~ 85°C
Voltage - Supply: 5V
Current - Supply: 2.8mA
Supplier Device Package: PG-DSO-24-8
Number of Circuits: 1
Power (Watts): 730 mW
товару немає в наявності
В кошику  од. на суму  грн.
ESD118B1W01005E6327XTSA1 Infineon Technologies Description: TVS DIODES
Packaging: Tray
товару немає в наявності
В кошику  од. на суму  грн.
S25HS02GTDPBHB050 S25HS02GTDPBHB050 Infineon Technologies Description: IC FLASH 2GBIT SPI/QUAD 24BGA
Packaging: Tray
Package / Case: 24-TBGA
Mounting Type: Surface Mount
Memory Size: 2Gbit
Memory Type: Non-Volatile
Operating Temperature: -40°C ~ 105°C (TA)
Voltage - Supply: 1.7V ~ 2V
Technology: FLASH - NOR (SLC)
Clock Frequency: 133 MHz
Memory Format: FLASH
Supplier Device Package: 24-BGA (8x6)
Write Cycle Time - Word, Page: 1.7ms
Memory Interface: SPI - Quad I/O, QPI
Access Time: 6 ns
Memory Organization: 256M x 8
DigiKey Programmable: Not Verified
товару немає в наявності
В кошику  од. на суму  грн.
CYW89342CRFB4G Infineon Technologies Description: IC RF TXRX+MCU BLE 248FCFBGA
Packaging: Tray
Package / Case: 248-BGA, FCBGA
Mounting Type: Surface Mount
Type: TxRx + MCU
Supplier Device Package: 248-FCFBGA (13x13)
RF Family/Standard: Bluetooth, WiFi
товару немає в наявності
В кошику  од. на суму  грн.
IRLML2803TR IRLML2803TR Infineon Technologies IRLML2803.pdf Description: MOSFET N-CH 30V 1.2A SOT-23
Packaging: Cut Tape (CT)
Package / Case: TO-236-3, SC-59, SOT-23-3
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 155°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 1.2A (Ta)
Rds On (Max) @ Id, Vgs: 250mOhm @ 910mA, 10V
Power Dissipation (Max): 540mW (Ta)
Vgs(th) (Max) @ Id: 1V @ 250µA
Supplier Device Package: SOT-23-3 (TO-236)
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 30 V
Gate Charge (Qg) (Max) @ Vgs: 5 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 85 pF @ 25 V
товару немає в наявності
В кошику  од. на суму  грн.
PSB3427RGTR PSB3427RGTR Infineon Technologies Description: LANTIQ PSB3427 TELECOMS IC
Packaging: Bulk
на замовлення 4961 шт:
термін постачання 21-31 дні (днів)
108+199.70 грн
Мінімальне замовлення: 108
В кошику  од. на суму  грн.
CYT3BBBCEBQ1BZEGST CYT3BBBCEBQ1BZEGST Infineon Technologies Infineon-TRAVEO_T2G_CYT3BB_4BB-DataSheet-v09_00-EN.pdf?fileId=5546d4627883d7e00178a73ba6ad1732 Description: TRAVEO-2 BODY HIGH-END
Packaging: Tape & Reel (TR)
Package / Case: 272-LFBGA
Mounting Type: Surface Mount
Speed: 100MHz, 250MHz
Program Memory Size: 4.0625MB (4.0625M x 8)
RAM Size: 768K x 8
Operating Temperature: -40°C ~ 125°C (TA)
Oscillator Type: External, Internal
Program Memory Type: FLASH
EEPROM Size: 256K x 8
Core Processor: ARM® Cortex®-M0+, ARM® Cortex®-M7F
Data Converters: A/D 72x12b SAR
Core Size: 32-Bit Dual-Core
Voltage - Supply (Vcc/Vdd): 2.7V ~ 5.5V
Connectivity: CANbus, Ethernet, I2C, LINbus, eMMC/SD, SPI, UART/USART
Peripherals: Brown-out Detect/Reset, DMA, I2S, LVD, POR, PWM, WDT
Supplier Device Package: 272-BGA (16x16)
Grade: Automotive
Number of I/O: 207
Qualification: AEC-Q100
товару немає в наявності
В кошику  од. на суму  грн.
BGA8L1BN6E6327XTSA1 BGA8L1BN6E6327XTSA1 Infineon Technologies Infineon-App_Guide_Mobile_Communication-BC-v01_01-EN.pdf Description: BGA8L1BN6 - SINGLE-BAND 3G/4G MM
Packaging: Bulk
на замовлення 975000 шт:
термін постачання 21-31 дні (днів)
840+26.27 грн
Мінімальне замовлення: 840
В кошику  од. на суму  грн.
BGA777N7E6327XTSA1 BGA777N7E6327XTSA1 Infineon Technologies Infineon-BGA777N7-DS-v03_01-en.pdf?fileId=db3a30433db6f09f013dcad25fd654d1 Description: BGA777N7 - SINGLE-BAND UMTS LNA
Packaging: Bulk
на замовлення 30000 шт:
термін постачання 21-31 дні (днів)
662+32.84 грн
Мінімальне замовлення: 662
В кошику  од. на суму  грн.
IRF8327STRPBF IRF8327STRPBF Infineon Technologies irf8327spbf.pdf?fileId=5546d462533600a40153560d40c41d65 Description: MOSFET N-CH 30V 14A DIRECTFET
Packaging: Tape & Reel (TR)
Package / Case: DirectFET™ Isometric SQ
Mounting Type: Surface Mount
Operating Temperature: -40°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 14A (Ta), 60A (Tc)
Rds On (Max) @ Id, Vgs: 7.3mOhm @ 14A, 10V
Power Dissipation (Max): 2.2W (Ta), 42W (Tc)
Vgs(th) (Max) @ Id: 2.4V @ 25µA
Supplier Device Package: DIRECTFET™ SQ
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 30 V
Gate Charge (Qg) (Max) @ Vgs: 14 nC @ 4.5 V
Input Capacitance (Ciss) (Max) @ Vds: 1430 pF @ 15 V
товару немає в наявності
В кошику  од. на суму  грн.
IRLML5103TR IRLML5103TR Infineon Technologies IRLML5103.pdf Description: MOSFET P-CH 30V 760MA SOT-23
Packaging: Cut Tape (CT)
Package / Case: TO-236-3, SC-59, SOT-23-3
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 155°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: P-Channel
Current - Continuous Drain (Id) @ 25°C: 760mA (Ta)
Rds On (Max) @ Id, Vgs: 600mOhm @ 600mA, 10V
Power Dissipation (Max): 540mW (Ta)
Vgs(th) (Max) @ Id: 1V @ 250µA
Supplier Device Package: SOT-23-3 (TO-236)
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 30 V
Gate Charge (Qg) (Max) @ Vgs: 5.1 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 75 pF @ 25 V
товару немає в наявності
В кошику  од. на суму  грн.
IR2130JPBF IR2130JPBF Infineon Technologies ir2130.pdf?fileId=5546d462533600a4015355c8757d169a Description: IC GATE DRVR HALF-BRIDGE 44PLCC
Packaging: Bulk
Package / Case: 44-LCC (J-Lead), 32 Leads
Mounting Type: Surface Mount
Operating Temperature: -40°C ~ 150°C (TJ)
Voltage - Supply: 10V ~ 20V
Input Type: Inverting
High Side Voltage - Max (Bootstrap): 600 V
Supplier Device Package: 44-PLCC, 32 Leads (16.58x16.58)
Rise / Fall Time (Typ): 80ns, 35ns
Channel Type: 3-Phase
Driven Configuration: Half-Bridge
Number of Drivers: 6
Gate Type: IGBT, MOSFET (N-Channel)
Logic Voltage - VIL, VIH: 0.8V, 2.2V
Current - Peak Output (Source, Sink): 250mA, 500mA
DigiKey Programmable: Not Verified
на замовлення 41 шт:
термін постачання 21-31 дні (днів)
33+638.99 грн
Мінімальне замовлення: 33
В кошику  од. на суму  грн.
IR2130JPBF IR2130JPBF Infineon Technologies ir2130.pdf?fileId=5546d462533600a4015355c8757d169a Description: IC GATE DRVR HALF-BRIDGE 44PLCC
Packaging: Tube
Package / Case: 44-LCC (J-Lead), 32 Leads
Mounting Type: Surface Mount
Operating Temperature: -40°C ~ 150°C (TJ)
Voltage - Supply: 10V ~ 20V
Input Type: Inverting
High Side Voltage - Max (Bootstrap): 600 V
Supplier Device Package: 44-PLCC, 32 Leads (16.58x16.58)
Rise / Fall Time (Typ): 80ns, 35ns
Channel Type: 3-Phase
Driven Configuration: Half-Bridge
Number of Drivers: 6
Gate Type: IGBT, MOSFET (N-Channel)
Logic Voltage - VIL, VIH: 0.8V, 2.2V
Current - Peak Output (Source, Sink): 250mA, 500mA
DigiKey Programmable: Not Verified
товару немає в наявності
В кошику  од. на суму  грн.
IR2130PBF IR2130PBF Infineon Technologies ir2130.pdf?fileId=5546d462533600a4015355c8757d169a description Description: IC GATE DRVR HALF-BRIDGE 28DIP
Packaging: Tube
Package / Case: 28-DIP (0.600", 15.24mm)
Mounting Type: Through Hole
Operating Temperature: -40°C ~ 150°C (TJ)
Voltage - Supply: 10V ~ 20V
Input Type: Inverting
High Side Voltage - Max (Bootstrap): 600 V
Supplier Device Package: 28-PDIP
Rise / Fall Time (Typ): 80ns, 35ns
Channel Type: 3-Phase
Driven Configuration: Half-Bridge
Number of Drivers: 6
Gate Type: IGBT, MOSFET (N-Channel)
Logic Voltage - VIL, VIH: 0.8V, 2.2V
Current - Peak Output (Source, Sink): 250mA, 500mA
DigiKey Programmable: Not Verified
на замовлення 27 шт:
термін постачання 21-31 дні (днів)
1+1015.94 грн
13+756.48 грн
26+719.19 грн
В кошику  од. на суму  грн.
GS61004B-MR GS61004B-MR Infineon Technologies Description: GS61004B-MR
Packaging: Tape & Reel (TR)
Package / Case: 3-SMD, No Lead
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: GaNFET (Gallium Nitride)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 45A (Tc)
Rds On (Max) @ Id, Vgs: 20mOhm @ 13.5A, 6V
Vgs(th) (Max) @ Id: 1.3V @ 7mA
Drive Voltage (Max Rds On, Min Rds On): 6V
Vgs (Max): +7V, -10V
Drain to Source Voltage (Vdss): 100 V
Gate Charge (Qg) (Max) @ Vgs: 6.2 nC @ 6 V
Input Capacitance (Ciss) (Max) @ Vds: 295 pF @ 50 V
на замовлення 500 шт:
термін постачання 21-31 дні (днів)
250+191.40 грн
500+172.00 грн
Мінімальне замовлення: 250
В кошику  од. на суму  грн.
GS61004B-MR GS61004B-MR Infineon Technologies Description: GS61004B-MR
Packaging: Cut Tape (CT)
Package / Case: 3-SMD, No Lead
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: GaNFET (Gallium Nitride)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 45A (Tc)
Rds On (Max) @ Id, Vgs: 20mOhm @ 13.5A, 6V
Vgs(th) (Max) @ Id: 1.3V @ 7mA
Drive Voltage (Max Rds On, Min Rds On): 6V
Vgs (Max): +7V, -10V
Drain to Source Voltage (Vdss): 100 V
Gate Charge (Qg) (Max) @ Vgs: 6.2 nC @ 6 V
Input Capacitance (Ciss) (Max) @ Vds: 295 pF @ 50 V
на замовлення 712 шт:
термін постачання 21-31 дні (днів)
1+404.22 грн
10+259.76 грн
100+215.86 грн
В кошику  од. на суму  грн.
GS61008P-MR GS61008P-MR Infineon Technologies Description: GS61008P-MR
Packaging: Tape & Reel (TR)
Package / Case: 5-SMD, No Lead
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C
Technology: GaNFET (Gallium Nitride)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 90A (Tc)
Rds On (Max) @ Id, Vgs: 9.5mOhm @ 27A, 6V
Vgs(th) (Max) @ Id: 2.6V @ 7mA
Drive Voltage (Max Rds On, Min Rds On): 6V
Vgs (Max): +7V, -10V
Drain to Source Voltage (Vdss): 100 V
Gate Charge (Qg) (Max) @ Vgs: 8 nC @ 6 V
Input Capacitance (Ciss) (Max) @ Vds: 600 pF @ 50 V
на замовлення 1000 шт:
термін постачання 21-31 дні (днів)
250+376.24 грн
500+343.99 грн
Мінімальне замовлення: 250
В кошику  од. на суму  грн.
GS61008P-MR GS61008P-MR Infineon Technologies Description: GS61008P-MR
Packaging: Cut Tape (CT)
Package / Case: 5-SMD, No Lead
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C
Technology: GaNFET (Gallium Nitride)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 90A (Tc)
Rds On (Max) @ Id, Vgs: 9.5mOhm @ 27A, 6V
Vgs(th) (Max) @ Id: 2.6V @ 7mA
Drive Voltage (Max Rds On, Min Rds On): 6V
Vgs (Max): +7V, -10V
Drain to Source Voltage (Vdss): 100 V
Gate Charge (Qg) (Max) @ Vgs: 8 nC @ 6 V
Input Capacitance (Ciss) (Max) @ Vds: 600 pF @ 50 V
на замовлення 1110 шт:
термін постачання 21-31 дні (днів)
1+681.44 грн
10+449.83 грн
100+424.36 грн
В кошику  од. на суму  грн.
CY2309ZXC-1H Infineon-CY2305_CY2309_Low_Cost_3.3_V_Zero_Delay_Buffer-DataSheet-v26_00-EN.pdf?fileId=8ac78c8c7d0d8da4017d0ebe422931ae&utm_source=cypress&utm_medium=referral&utm_campaign=202110_globe_en_all_integration-files
CY2309ZXC-1H
Виробник: Infineon Technologies
Description: IC FANOUT BUFFER 16TSSOP
Packaging: Tube
Package / Case: 16-TSSOP (0.173", 4.40mm Width)
Mounting Type: Surface Mount
Output: LVCMOS
Frequency - Max: 133.33MHz
Type: Fanout Buffer (Distribution), Zero Delay Buffer
Input: LVCMOS, LVTTL
Operating Temperature: 0°C ~ 70°C
Voltage - Supply: 3V ~ 3.6V
Ratio - Input:Output: 1:9
Differential - Input:Output: No/No
Supplier Device Package: 16-TSSOP
PLL: Yes with Bypass
Divider/Multiplier: No/No
Number of Circuits: 1
DigiKey Programmable: Not Verified
товару немає в наявності
В кошику  од. на суму  грн.
CY7B991V-7JXC download
CY7B991V-7JXC
Виробник: Infineon Technologies
Description: IC CLK BUFFER 8:8 80MHZ 32PLCC
Packaging: Tube
Package / Case: 32-LCC (J-Lead)
Number of Circuits: 1
Mounting Type: Surface Mount
Output: LVTTL
Type: Buffer/Driver
Input: 3-State
Operating Temperature: 0°C ~ 70°C
Voltage - Supply: 2.97V ~ 3.63V
Ratio - Input:Output: 8:8
Differential - Input:Output: Yes/No
Supplier Device Package: 32-PLCC (11.43x13.97)
Frequency - Max: 80 MHz
товару немає в наявності
В кошику  од. на суму  грн.
CY62256VLL-70SNXC CY62256V_RevF.pdf
CY62256VLL-70SNXC
Виробник: Infineon Technologies
Description: IC SRAM 256KBIT PARALLEL 28SOIC
Packaging: Tube
Package / Case: 28-SOIC (0.295", 7.50mm Width)
Mounting Type: Surface Mount
Memory Size: 256Kbit
Memory Type: Volatile
Operating Temperature: 0°C ~ 70°C (TA)
Voltage - Supply: 2.7V ~ 3.6V
Technology: SRAM - Asynchronous
Memory Format: SRAM
Supplier Device Package: 28-SOIC
Write Cycle Time - Word, Page: 70ns
Memory Interface: Parallel
Access Time: 70 ns
Memory Organization: 32K x 8
DigiKey Programmable: Not Verified
товару немає в наявності
В кошику  од. на суму  грн.
CY7C1021CV33-10ZXC CY7C1021CV33%20RevI.pdf
CY7C1021CV33-10ZXC
Виробник: Infineon Technologies
Description: IC SRAM 1MBIT PARALLEL 44TSOP II
Packaging: Bag
Package / Case: 44-TSOP (0.400", 10.16mm Width)
Mounting Type: Surface Mount
Memory Size: 1Mbit
Memory Type: Volatile
Operating Temperature: 0°C ~ 70°C (TA)
Voltage - Supply: 3V ~ 3.6V
Technology: SRAM - Asynchronous
Memory Format: SRAM
Supplier Device Package: 44-TSOP II
Write Cycle Time - Word, Page: 10ns
Memory Interface: Parallel
Access Time: 10 ns
Memory Organization: 64K x 16
DigiKey Programmable: Not Verified
товару немає в наявності
В кошику  од. на суму  грн.
CY7C1021CV33-15ZXC CY7C1021CV33%20RevI.pdf
CY7C1021CV33-15ZXC
Виробник: Infineon Technologies
Description: IC SRAM 1MBIT PARALLEL 44TSOP II
Packaging: Bag
Package / Case: 44-TSOP (0.400", 10.16mm Width)
Mounting Type: Surface Mount
Memory Size: 1Mbit
Memory Type: Volatile
Operating Temperature: 0°C ~ 70°C (TA)
Voltage - Supply: 3V ~ 3.6V
Technology: SRAM - Asynchronous
Memory Format: SRAM
Supplier Device Package: 44-TSOP II
Write Cycle Time - Word, Page: 15ns
Memory Interface: Parallel
Access Time: 15 ns
Memory Organization: 64K x 16
DigiKey Programmable: Not Verified
товару немає в наявності
В кошику  од. на суму  грн.
IGOT65R045D2AUMA1 Infineon-IGOT65R045D2-DataSheet-v01_00-EN.pdf?fileId=8ac78c8c8eeb092c018f0a57b4b50301
IGOT65R045D2AUMA1
Виробник: Infineon Technologies
Description: IGOT65R045D2AUMA1
Packaging: Tape & Reel (TR)
Package / Case: 20-BFSOP (0.295", 7.50mm Width)
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: GaNFET (Gallium Nitride)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 34A (Tc)
Power Dissipation (Max): 109W (Tc)
Vgs(th) (Max) @ Id: 1.6V @ 3.3mA
Supplier Device Package: PG-DSO-20-91
Vgs (Max): -10V
Drain to Source Voltage (Vdss): 650 V
Gate Charge (Qg) (Max) @ Vgs: 6 nC @ 3 V
Input Capacitance (Ciss) (Max) @ Vds: 430 pF @ 400 V
товару немає в наявності
В кошику  од. на суму  грн.
IGOT65R045D2AUMA1 Infineon-IGOT65R045D2-DataSheet-v01_00-EN.pdf?fileId=8ac78c8c8eeb092c018f0a57b4b50301
IGOT65R045D2AUMA1
Виробник: Infineon Technologies
Description: IGOT65R045D2AUMA1
Packaging: Cut Tape (CT)
Package / Case: 20-BFSOP (0.295", 7.50mm Width)
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: GaNFET (Gallium Nitride)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 34A (Tc)
Power Dissipation (Max): 109W (Tc)
Vgs(th) (Max) @ Id: 1.6V @ 3.3mA
Supplier Device Package: PG-DSO-20-91
Vgs (Max): -10V
Drain to Source Voltage (Vdss): 650 V
Gate Charge (Qg) (Max) @ Vgs: 6 nC @ 3 V
Input Capacitance (Ciss) (Max) @ Vds: 430 pF @ 400 V
товару немає в наявності
В кошику  од. на суму  грн.
IGLT65R025D2AUMA1 Infineon-IGLT65R025D2-DataSheet-v01_00-EN.pdf?fileId=8ac78c8c8eeb092c018f0a2bda5d7275
IGLT65R025D2AUMA1
Виробник: Infineon Technologies
Description: IGLT65R025D2AUMA1
Packaging: Tape & Reel (TR)
Package / Case: 16-PowerSOP Module
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: GaNFET (Gallium Nitride)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 67A (Tc)
Power Dissipation (Max): 219W (Tc)
Vgs(th) (Max) @ Id: 1.6V @ 6.1mA
Supplier Device Package: PG-HDSOP-16-8
Vgs (Max): -10V
Drain to Source Voltage (Vdss): 650 V
Gate Charge (Qg) (Max) @ Vgs: 11 nC @ 3 V
Input Capacitance (Ciss) (Max) @ Vds: 780 pF @ 400 V
товару немає в наявності
В кошику  од. на суму  грн.
IGLT65R025D2AUMA1 Infineon-IGLT65R025D2-DataSheet-v01_00-EN.pdf?fileId=8ac78c8c8eeb092c018f0a2bda5d7275
IGLT65R025D2AUMA1
Виробник: Infineon Technologies
Description: IGLT65R025D2AUMA1
Packaging: Cut Tape (CT)
Package / Case: 16-PowerSOP Module
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: GaNFET (Gallium Nitride)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 67A (Tc)
Power Dissipation (Max): 219W (Tc)
Vgs(th) (Max) @ Id: 1.6V @ 6.1mA
Supplier Device Package: PG-HDSOP-16-8
Vgs (Max): -10V
Drain to Source Voltage (Vdss): 650 V
Gate Charge (Qg) (Max) @ Vgs: 11 nC @ 3 V
Input Capacitance (Ciss) (Max) @ Vds: 780 pF @ 400 V
товару немає в наявності
В кошику  од. на суму  грн.
IGOT65R025D2AUMA1 Infineon-IGOT65R025D2-DataSheet-v01_00-EN.pdf?fileId=8ac78c8c8eeb092c018f0a57aa7202fb
IGOT65R025D2AUMA1
Виробник: Infineon Technologies
Description: IGOT65R025D2AUMA1
Packaging: Tape & Reel (TR)
Package / Case: 20-BFSOP (0.295", 7.50mm Width)
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: GaNFET (Gallium Nitride)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 61A (Tc)
Power Dissipation (Max): 184W (Tc)
Vgs(th) (Max) @ Id: 1.6V @ 6.1mA
Supplier Device Package: PG-DSO-20-91
Vgs (Max): -10V
Drain to Source Voltage (Vdss): 650 V
Gate Charge (Qg) (Max) @ Vgs: 11 nC @ 3 V
Input Capacitance (Ciss) (Max) @ Vds: 780 pF @ 400 V
товару немає в наявності
В кошику  од. на суму  грн.
IGOT65R025D2AUMA1 Infineon-IGOT65R025D2-DataSheet-v01_00-EN.pdf?fileId=8ac78c8c8eeb092c018f0a57aa7202fb
IGOT65R025D2AUMA1
Виробник: Infineon Technologies
Description: IGOT65R025D2AUMA1
Packaging: Cut Tape (CT)
Package / Case: 20-BFSOP (0.295", 7.50mm Width)
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: GaNFET (Gallium Nitride)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 61A (Tc)
Power Dissipation (Max): 184W (Tc)
Vgs(th) (Max) @ Id: 1.6V @ 6.1mA
Supplier Device Package: PG-DSO-20-91
Vgs (Max): -10V
Drain to Source Voltage (Vdss): 650 V
Gate Charge (Qg) (Max) @ Vgs: 11 nC @ 3 V
Input Capacitance (Ciss) (Max) @ Vds: 780 pF @ 400 V
на замовлення 546 шт:
термін постачання 21-31 дні (днів)
Кількість Ціна
1+880.65 грн
10+590.50 грн
100+509.04 грн
В кошику  од. на суму  грн.
S6E1C12C0AGV20000 Infineon-S6E1C32D0AGN20050-DataSheet-v01_00-EN.pdf?fileId=8ac78c8c81ae03fc0181ec33e75c2c49
S6E1C12C0AGV20000
Виробник: Infineon Technologies
Description: IC MCU 32BIT 128KB FLASH 48LQFP
Packaging: Tray
Package / Case: 48-LQFP
Mounting Type: Surface Mount
Speed: 40MHz
Program Memory Size: 128KB (128K x 8)
RAM Size: 16K x 8
Operating Temperature: -40°C ~ 105°C (TA)
Oscillator Type: Internal
Program Memory Type: FLASH
Core Processor: ARM® Cortex®-M0+
Data Converters: A/D 8x12b
Core Size: 32-Bit Single-Core
Voltage - Supply (Vcc/Vdd): 1.65V ~ 3.6V
Connectivity: CSIO, I2C, LINbus, SmartCard, UART/USART
Peripherals: I2S, LVD, POR, PWM, WDT
Supplier Device Package: 48-LQFP (7x7)
Number of I/O: 38
DigiKey Programmable: Not Verified
на замовлення 2466 шт:
термін постачання 21-31 дні (днів)
Кількість Ціна
2+263.94 грн
10+191.83 грн
25+176.13 грн
100+149.07 грн
250+141.35 грн
500+136.69 грн
1000+130.68 грн
Мінімальне замовлення: 2
В кошику  од. на суму  грн.
DEMOFX3LVDSCAM01TOBO1 Infineon-DEMO_FX3_LVDS_CAM01_EZ-USB_FX3_BT-UserManual-v03_00-EN.pdf?fileId=8ac78c8c8b6555fe018c1531687808ca
DEMOFX3LVDSCAM01TOBO1
Виробник: Infineon Technologies
Description: DEMOFX3LVDSCAM01TOBO1
Packaging: Box
Interface: GPIO, I2C, I2S, SPI, UART, USB
Contents: Board(s)
Voltage - Supply: 1.7V ~ 3.6V
Sensor Type: Image Sensor
Utilized IC / Part: CYUSB3014
Embedded: No
на замовлення 1 шт:
термін постачання 21-31 дні (днів)
Кількість Ціна
1+34574.25 грн
В кошику  од. на суму  грн.
KITLGPWRBOM007TOBO1 Infineon-UserManual_LVDSPD_low_voltage_drives_scalable_power_demonstration_board-UM-v01_00-EN.pdf?fileId=5546d462696dbf120169b58bda49538e
KITLGPWRBOM007TOBO1
Виробник: Infineon Technologies
Description: EVAL POWER BOARD 200V
Packaging: Box
Function: Half H-Bridge Driver (Internal FET)
Type: Power Management
Contents: Board(s)
на замовлення 5 шт:
термін постачання 21-31 дні (днів)
Кількість Ціна
1+5444.07 грн
В кошику  од. на суму  грн.
KITTVSDIODE7TOBO1
KITTVSDIODE7TOBO1
Виробник: Infineon Technologies
Description: KIT SAMPLE TVS FOR RF/ANT PROT
Packaging: Box
Mounting Type: Surface Mount
Quantity: 112 Pieces (8 Values - Mixed Quantities)
Kit Type: ESD Protection
Voltage - Breakdown: 3.3V ~ 70V
товару немає в наявності
В кошику  од. на суму  грн.
ISC018N08NM6ATMA1 Infineon-ISC018N08NM6-DataSheet-v02_00-EN.pdf?fileId=8ac78c8c8c3de074018c3f9382112e16
ISC018N08NM6ATMA1
Виробник: Infineon Technologies
Description: TRENCH 40<-<100V
Packaging: Tape & Reel (TR)
товару немає в наявності
В кошику  од. на суму  грн.
T460N22TOFXPSA1 Infineon-T460N-DS-v01_00-en_de.pdf?fileId=db3a304323b87bc20123ffc158c25c0d
T460N22TOFXPSA1
Виробник: Infineon Technologies
Description: SCR MODULE 2.6KV 1000A DO-200AB
Packaging: Tray
Package / Case: DO-200AB, B-PUK
Mounting Type: Clamp On
Operating Temperature: -40°C ~ 125°C
Structure: Single
Current - Hold (Ih) (Max): 200 mA
Current - Gate Trigger (Igt) (Max): 250 mA
Current - Non Rep. Surge 50, 60Hz (Itsm): 10000A @ 50Hz
Number of SCRs, Diodes: 1 SCR
Current - On State (It (AV)) (Max): 460 A
Voltage - Gate Trigger (Vgt) (Max): 1.5 V
Current - On State (It (RMS)) (Max): 1000 A
Voltage - Off State: 2.6 kV
товару немає в наявності
В кошику  од. на суму  грн.
T460N24TOFXPSA1 Infineon-T460N-DS-v01_00-en_de.pdf?fileId=db3a304323b87bc20123ffc158c25c0d
T460N24TOFXPSA1
Виробник: Infineon Technologies
Description: SCR MODULE 2.6KV 1000A DO-200AB
Packaging: Tray
Package / Case: DO-200AB, B-PUK
Mounting Type: Clamp On
Operating Temperature: -40°C ~ 125°C
Structure: Single
Current - Hold (Ih) (Max): 200 mA
Current - Gate Trigger (Igt) (Max): 250 mA
Current - Non Rep. Surge 50, 60Hz (Itsm): 10000A @ 50Hz
Number of SCRs, Diodes: 1 SCR
Current - On State (It (AV)) (Max): 460 A
Voltage - Gate Trigger (Vgt) (Max): 1.5 V
Current - On State (It (RMS)) (Max): 1000 A
Voltage - Off State: 2.6 kV
товару немає в наявності
В кошику  од. на суму  грн.
XMC1100T016X0200ABXUMA1
Виробник: Infineon Technologies
Description: IC MCU
Packaging: Tape & Reel (TR)
DigiKey Programmable: Not Verified
товару немає в наявності
В кошику  од. на суму  грн.
IDK02G65C5XTMA2 Infineon-IDK02G65C5-DS-v02_00-en.pdf?fileId=db3a304342c787030142e6f880f921bd
IDK02G65C5XTMA2
Виробник: Infineon Technologies
Description: DIODE SIL CARB 650V 2A PGTO2632
Packaging: Tape & Reel (TR)
Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
Mounting Type: Surface Mount
Speed: No Recovery Time > 500mA (Io)
Reverse Recovery Time (trr): 0 ns
Technology: SiC (Silicon Carbide) Schottky
Capacitance @ Vr, F: 70pF @ 1V, 1MHz
Current - Average Rectified (Io): 2A
Supplier Device Package: PG-TO263-2
Operating Temperature - Junction: -55°C ~ 175°C
Voltage - DC Reverse (Vr) (Max): 650 V
Voltage - Forward (Vf) (Max) @ If: 1.8 V @ 2 A
Current - Reverse Leakage @ Vr: 330 µA @ 650 V
товару немає в наявності
В кошику  од. на суму  грн.
IDK02G65C5XTMA2 Infineon-IDK02G65C5-DS-v02_00-en.pdf?fileId=db3a304342c787030142e6f880f921bd
IDK02G65C5XTMA2
Виробник: Infineon Technologies
Description: DIODE SIL CARB 650V 2A PGTO2632
Packaging: Cut Tape (CT)
Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
Mounting Type: Surface Mount
Speed: No Recovery Time > 500mA (Io)
Reverse Recovery Time (trr): 0 ns
Technology: SiC (Silicon Carbide) Schottky
Capacitance @ Vr, F: 70pF @ 1V, 1MHz
Current - Average Rectified (Io): 2A
Supplier Device Package: PG-TO263-2
Operating Temperature - Junction: -55°C ~ 175°C
Voltage - DC Reverse (Vr) (Max): 650 V
Voltage - Forward (Vf) (Max) @ If: 1.8 V @ 2 A
Current - Reverse Leakage @ Vr: 330 µA @ 650 V
товару немає в наявності
В кошику  од. на суму  грн.
FP15R12KE3GBOSA1 Infineon-FP15R12KE3G-DS-v03_02-en_de.pdf?fileId=db3a304412b407950112b430a8c95181
FP15R12KE3GBOSA1
Виробник: Infineon Technologies
Description: IGBT MOD 1200V 25A 105W
Packaging: Bulk
Package / Case: Module
Mounting Type: Chassis Mount
Input: Standard
Configuration: Three Phase Inverter
Operating Temperature: -40°C ~ 125°C
Vce(on) (Max) @ Vge, Ic: 2.15V @ 15V, 15A
NTC Thermistor: Yes
Supplier Device Package: Module
IGBT Type: Trench Field Stop
Current - Collector (Ic) (Max): 25 A
Voltage - Collector Emitter Breakdown (Max): 1200 V
Power - Max: 105 W
Current - Collector Cutoff (Max): 1 mA
Input Capacitance (Cies) @ Vce: 1.1 nF @ 25 V
на замовлення 3 шт:
термін постачання 21-31 дні (днів)
Кількість Ціна
1+4494.53 грн
В кошику  од. на суму  грн.
FS75R12KT4B11BOSA1 Infineon-FS75R12KT4_B11-DS-v03_00-en_de.pdf?fileId=db3a30431a47d73d011a49691bbc0130
FS75R12KT4B11BOSA1
Виробник: Infineon Technologies
Description: IGBT MOD 1200V 75A 385W MOD
Packaging: Bulk
Package / Case: Module
Mounting Type: Chassis Mount
Input: Standard
Configuration: Three Phase Inverter
Operating Temperature: -40°C ~ 150°C
Vce(on) (Max) @ Vge, Ic: 2.15V @ 15V, 75A
NTC Thermistor: Yes
Supplier Device Package: Module
IGBT Type: Trench Field Stop
Current - Collector (Ic) (Max): 75 A
Voltage - Collector Emitter Breakdown (Max): 1200 V
Power - Max: 385 W
Current - Collector Cutoff (Max): 1 mA
Input Capacitance (Cies) @ Vce: 4.3 nF @ 25 V
на замовлення 2 шт:
термін постачання 21-31 дні (днів)
Кількість Ціна
2+10753.25 грн
Мінімальне замовлення: 2
В кошику  од. на суму  грн.
FF450R17IE4BOSA2 Infineon-FF450R17IE4-DS-v03_01-en_de.pdf?fileId=db3a30431ff98815012023af4c1b5a9f
FF450R17IE4BOSA2
Виробник: Infineon Technologies
Description: IGBT MOD 1700V 620A 2800W
Packaging: Tray
Package / Case: Module
Mounting Type: Chassis Mount
Input: Standard
Configuration: 2 Independent
Operating Temperature: -40°C ~ 150°C
Vce(on) (Max) @ Vge, Ic: 2.45V @ 15V, 450A
NTC Thermistor: Yes
Supplier Device Package: Module
Current - Collector (Ic) (Max): 620 A
Voltage - Collector Emitter Breakdown (Max): 1700 V
Power - Max: 2800 W
Current - Collector Cutoff (Max): 5 mA
Input Capacitance (Cies) @ Vce: 36 nF @ 25 V
товару немає в наявності
В кошику  од. на суму  грн.
FS450R17KE4BOSA1 Infineon-FS450R17KE4-DS-v02_01-en_de.pdf?fileId=db3a30431f848401011fb30c0c1e4ff6
FS450R17KE4BOSA1
Виробник: Infineon Technologies
Description: IGBT MOD 1700V 600A 2500W
Packaging: Tray
Package / Case: Module
Mounting Type: Chassis Mount
Input: Standard
Configuration: Full Bridge
Operating Temperature: -40°C ~ 150°C
Vce(on) (Max) @ Vge, Ic: 2.3V @ 15V, 450A
NTC Thermistor: Yes
Supplier Device Package: Module
IGBT Type: Trench Field Stop
Current - Collector (Ic) (Max): 600 A
Voltage - Collector Emitter Breakdown (Max): 1700 V
Power - Max: 2500 W
Current - Collector Cutoff (Max): 3 mA
Input Capacitance (Cies) @ Vce: 36 nF @ 25 V
товару немає в наявності
В кошику  од. на суму  грн.
IRLML6302TR IRLML6302.pdf
IRLML6302TR
Виробник: Infineon Technologies
Description: MOSFET P-CH 20V 780MA SOT-23
Packaging: Cut Tape (CT)
Package / Case: TO-236-3, SC-59, SOT-23-3
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 155°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: P-Channel
Current - Continuous Drain (Id) @ 25°C: 780mA (Ta)
Rds On (Max) @ Id, Vgs: 600mOhm @ 610mA, 4.5V
Power Dissipation (Max): 540mW (Ta)
Vgs(th) (Max) @ Id: 1.5V @ 250µA
Supplier Device Package: SOT-23-3 (TO-236)
Drive Voltage (Max Rds On, Min Rds On): 2.7V, 4.5V
Vgs (Max): ±12V
Drain to Source Voltage (Vdss): 20 V
Gate Charge (Qg) (Max) @ Vgs: 3.6 nC @ 4.45 V
Input Capacitance (Ciss) (Max) @ Vds: 97 pF @ 15 V
товару немає в наявності
В кошику  од. на суму  грн.
CY95F698KNPMC-GXXXUNERE2 infineon-mb95690k-series-new-8fx-8-bit-microcontrollers-datasheet-en.pdf?fileId=8ac78c8c7d0d8da4017d0edd8b976206
CY95F698KNPMC-GXXXUNERE2
Виробник: Infineon Technologies
Description: IC MCU 8BIT 60KB 48LQFP
Packaging: Tape & Reel (TR)
Package / Case: 48-LQFP
Mounting Type: Surface Mount
Speed: 16.25MHz
Program Memory Size: 60KB (60K x 8)
RAM Size: 2K x 8
Operating Temperature: -40°C ~ 85°C (TA)
Oscillator Type: External, Internal
Program Memory Type: FLASH
Core Processor: F²MC-8FX
Data Converters: A/D 12x8/10b
Core Size: 8-Bit
Voltage - Supply (Vcc/Vdd): 2.88V ~ 5.5V
Connectivity: I2C, LINbus, SIO, UART/USART
Peripherals: LVD, LVR, POR, PWM, WDT
Supplier Device Package: 48-LQFP (7x7)
Number of I/O: 45
товару немає в наявності
В кошику  од. на суму  грн.
S25FL512SAGBHBC13 Infineon-S25FL512S_512_Mb_(64_MB)_3.0_V_SPI_Flash_Memory-DataSheet-v19_00-EN.pdf?fileId=8ac78c8c7d0d8da4017d0ed046ae4b53&utm_source=cypress&utm_medium=referral&utm_campaign=202110_globe_en_all_integration-files
S25FL512SAGBHBC13
Виробник: Infineon Technologies
Description: IC FLASH 512MBIT SPI/QUAD 24BGA
Packaging: Tape & Reel (TR)
Package / Case: 24-TBGA
Mounting Type: Surface Mount
Memory Size: 512Mbit
Memory Type: Non-Volatile
Operating Temperature: -40°C ~ 105°C (TA)
Voltage - Supply: 2.7V ~ 3.6V
Technology: FLASH - NOR
Clock Frequency: 133 MHz
Memory Format: FLASH
Supplier Device Package: 24-BGA (8x6)
Grade: Automotive
Memory Interface: SPI - Quad I/O
Memory Organization: 64M x 8
DigiKey Programmable: Not Verified
Qualification: AEC-Q100
товару немає в наявності
В кошику  од. на суму  грн.
S25HL512TDPMHM010 en?dcId=8a8181663431cb50013431cb500b0000&downloadTitle=Infineon-S25HS256T_S25HS512T_S25HS01GT_S25HL256T_S25HL512T_S25HL01GT_256Mb_512Mb_1Gb_SEMPER_TM_Flash_Quad_SPI_1_8V_3-DataSheet-v68_00-EN.pdf&download=L2RnZGwvSW5maW5lb24
S25HL512TDPMHM010
Виробник: Infineon Technologies
Description: IC FLASH 512MBIT SPI/QUAD 16SOIC
Packaging: Tray
Package / Case: 16-SOIC (0.295", 7.50mm Width)
Mounting Type: Surface Mount
Memory Size: 512Mbit
Memory Type: Non-Volatile
Operating Temperature: -40°C ~ 125°C (TA)
Voltage - Supply: 2.7V ~ 3.6V
Technology: FLASH - NOR (SLC)
Clock Frequency: 133 MHz
Memory Format: FLASH
Supplier Device Package: 16-SOIC
Memory Interface: SPI - Quad I/O, QPI
Memory Organization: 64M x 8
DigiKey Programmable: Not Verified
товару немає в наявності
В кошику  од. на суму  грн.
FS100R12KE3BOSA1 Infineon-FS100R12KE3-DS-v03_01-en_de.pdf?fileId=db3a304412b407950112b4310be95324
FS100R12KE3BOSA1
Виробник: Infineon Technologies
Description: IGBT MOD 1200V 140A 480W MOD
Packaging: Tray
Package / Case: Module
Mounting Type: Chassis Mount
Input: Standard
Configuration: Single
Operating Temperature: -40°C ~ 125°C (TJ)
Vce(on) (Max) @ Vge, Ic: 2.15V @ 15V, 100A
NTC Thermistor: No
Supplier Device Package: Module
IGBT Type: NPT
Current - Collector (Ic) (Max): 140 A
Voltage - Collector Emitter Breakdown (Max): 1200 V
Power - Max: 480 W
Current - Collector Cutoff (Max): 5 mA
Input Capacitance (Cies) @ Vce: 7.1 nF @ 25 V
на замовлення 9 шт:
термін постачання 21-31 дні (днів)
Кількість Ціна
1+7580.52 грн
В кошику  од. на суму  грн.
PEF3101FV1.3
PEF3101FV1.3
Виробник: Infineon Technologies
Description: DUSLIC: SINGLE CHANNEL SLIC
Packaging: Bulk
на замовлення 9000 шт:
термін постачання 21-31 дні (днів)
Кількість Ціна
48+464.12 грн
Мінімальне замовлення: 48
В кошику  од. на суму  грн.
IRF7304TR IRF7304.pdf
IRF7304TR
Виробник: Infineon Technologies
Description: MOSFET 2P-CH 20V 4.3A 8SO
Packaging: Tape & Reel (TR)
Package / Case: 8-SOIC (0.154", 3.90mm Width)
Mounting Type: Surface Mount
Configuration: 2 P-Channel (Dual)
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
Power - Max: 2W
Drain to Source Voltage (Vdss): 20V
Current - Continuous Drain (Id) @ 25°C: 4.3A
Input Capacitance (Ciss) (Max) @ Vds: 610pF @ 15V
Rds On (Max) @ Id, Vgs: 90mOhm @ 2.2A, 4.5V
Gate Charge (Qg) (Max) @ Vgs: 22nC @ 4.5V
FET Feature: Logic Level Gate
Vgs(th) (Max) @ Id: 700mV @ 250µA
Supplier Device Package: 8-SO
товару немає в наявності
В кошику  од. на суму  грн.
TLE4802SC16S0000XUMA1 Infineon-TLE4802SC16-S0000-DataSheet-v01_00-EN.pdf?fileId=8ac78c8c93dda25b0194ff40e21e01fb
TLE4802SC16S0000XUMA1
Виробник: Infineon Technologies
Description: TLE4802SC16S0000XUMA1
Packaging: Tape & Reel (TR)
Package / Case: 16-TSSOP (0.173", 4.40mm Width)
Mounting Type: Surface Mount
Output: SPC
Operating Temperature: -40°C ~ 150°C
Termination Style: SMD (SMT) Tab
Voltage - Supply: 4.4V ~ 6V
Actuator Type: External Magnet, Not Included
Technology: Inductive
For Measuring: Angle
Supplier Device Package: PG-TSSOP-16
Rotation Angle - Electrical, Mechanical: 0° ~ 360°
Output Signal: Clockwise Increase
Grade: Automotive
Qualification: AEC-Q100
товару немає в наявності
В кошику  од. на суму  грн.
TLE4802SC16S0000XUMA1 Infineon-TLE4802SC16-S0000-DataSheet-v01_00-EN.pdf?fileId=8ac78c8c93dda25b0194ff40e21e01fb
TLE4802SC16S0000XUMA1
Виробник: Infineon Technologies
Description: TLE4802SC16S0000XUMA1
Packaging: Cut Tape (CT)
Package / Case: 16-TSSOP (0.173", 4.40mm Width)
Mounting Type: Surface Mount
Output: SPC
Operating Temperature: -40°C ~ 150°C
Termination Style: SMD (SMT) Tab
Voltage - Supply: 4.4V ~ 6V
Actuator Type: External Magnet, Not Included
Technology: Inductive
For Measuring: Angle
Supplier Device Package: PG-TSSOP-16
Rotation Angle - Electrical, Mechanical: 0° ~ 360°
Output Signal: Clockwise Increase
Grade: Automotive
Qualification: AEC-Q100
на замовлення 290 шт:
термін постачання 21-31 дні (днів)
Кількість Ціна
1+377.66 грн
5+326.74 грн
10+312.92 грн
25+278.28 грн
50+267.77 грн
100+258.13 грн
В кошику  од. на суму  грн.
IRG7PSH54K10DPBF IRG7PSH54K10DPbF.pdf
IRG7PSH54K10DPBF
Виробник: Infineon Technologies
Description: IGBT 1200V 120A SUPER-247
Packaging: Tube
Package / Case: TO-274AA
Mounting Type: Through Hole
Operating Temperature: -40°C ~ 150°C (TJ)
Input Type: Standard
Reverse Recovery Time (trr): 170 ns
Vce(on) (Max) @ Vge, Ic: 2.4V @ 15V, 50A
Supplier Device Package: SUPER-247™ (TO-274AA)
Td (on/off) @ 25°C: 110ns/490ns
Switching Energy: 4.8mJ (on), 2.8mJ (off)
Test Condition: 600V, 50A, 5Ohm, 15V
Gate Charge: 435 nC
Current - Collector (Ic) (Max): 120 A
Voltage - Collector Emitter Breakdown (Max): 1200 V
Current - Collector Pulsed (Icm): 200 A
Power - Max: 520 W
товару немає в наявності
В кошику  од. на суму  грн.
S28HS512TGABHB013 S28H%28L%2CS%2901GT_256T_512T_RevA_7-8-19.pdf
S28HS512TGABHB013
Виробник: Infineon Technologies
Description: IC FLASH 512MBIT SPI/OCTL 24FBGA
Packaging: Tape & Reel (TR)
Package / Case: 24-VBGA
Mounting Type: Surface Mount
Memory Size: 512Mbit
Memory Type: Non-Volatile
Operating Temperature: -40°C ~ 105°C (TA)
Voltage - Supply: 1.7V ~ 2V
Technology: FLASH - NOR (SLC)
Clock Frequency: 200 MHz
Memory Format: FLASH
Supplier Device Package: 24-FBGA (6x8)
Write Cycle Time - Word, Page: 1.7ms
Memory Interface: SPI - Octal I/O
Access Time: 5.45 ns
Memory Organization: 64M x 8
DigiKey Programmable: Not Verified
товару немає в наявності
В кошику  од. на суму  грн.
S28HS512TGABHB010 S28H%28L%2CS%2901GT_256T_512T_RevA_7-8-19.pdf
S28HS512TGABHB010
Виробник: Infineon Technologies
Description: IC FLASH 512MBIT SPI/OCTL 24FBGA
Packaging: Tray
Package / Case: 24-VBGA
Mounting Type: Surface Mount
Memory Size: 512Mbit
Memory Type: Non-Volatile
Operating Temperature: -40°C ~ 105°C (TA)
Voltage - Supply: 1.7V ~ 2V
Technology: FLASH - NOR (SLC)
Clock Frequency: 200 MHz
Memory Format: FLASH
Supplier Device Package: 24-FBGA (6x8)
Write Cycle Time - Word, Page: 1.7ms
Memory Interface: SPI - Octal I/O
Access Time: 5.45 ns
Memory Organization: 64M x 8
DigiKey Programmable: Not Verified
товару немає в наявності
В кошику  од. на суму  грн.
CY8CPLC10-28PVXI Infineon-CY8CPLC10_Powerline_Communication_Solution-DataSheet-v15_00-EN.pdf?fileId=8ac78c8c7d0d8da4017d0eca76724344&utm_source=cypress&utm_medium=referral&utm_campaign=202110_globe_en_all_integration-files
CY8CPLC10-28PVXI
Виробник: Infineon Technologies
Description: IC PLC PSOC CMOS 28SSOP
Packaging: Tube
Package / Case: 28-SSOP (0.209", 5.30mm Width)
Mounting Type: Surface Mount
Baud Rates: 2.4k
Voltage - Supply: 4.75V ~ 5.25V
Supplier Device Package: 28-SSOP
на замовлення 141 шт:
термін постачання 21-31 дні (днів)
Кількість Ціна
1+1244.19 грн
10+951.45 грн
47+855.94 грн
141+759.52 грн
В кошику  од. на суму  грн.
CY3236A-PIRMOTION CY3236A-PIRMOTION_EVALkit_Gde.pdf
CY3236A-PIRMOTION
Виробник: Infineon Technologies
Description: KIT PIR MOTION DETECT
Packaging: Box
Sensitivity: Adjustable
Interface: Relay
Contents: Board(s), Cable(s), Power Supply
Voltage - Supply: 12V
Sensor Type: Motion, Pyroelectric, PIR (Passive Infrared)
Utilized IC / Part: CY8C27443-24PVXI
Embedded: Yes, MCU, 8-Bit
товару немає в наявності
В кошику  од. на суму  грн.
STT1400N16P55HPSA1 Infineon-STT1400N16P55-DS-v03_01-EN.pdf?fileId=5546d4625fe36784015ffc220d0b1754
STT1400N16P55HPSA1
Виробник: Infineon Technologies
Description: SCR MODULE 1.6KV MODULE
Packaging: Tray
Package / Case: Module
Mounting Type: Chassis Mount
Operating Temperature: 125°C (TJ)
Structure: 1-Phase Controller - All SCRs
Current - Hold (Ih) (Max): 300 mA
Current - Gate Trigger (Igt) (Max): 200 mA
Current - Non Rep. Surge 50, 60Hz (Itsm): 10500A @ 50Hz
Number of SCRs, Diodes: 2 SCRs
Voltage - Gate Trigger (Vgt) (Max): 2 V
Voltage - Off State: 1.6 kV
товару немає в наявності
В кошику  од. на суму  грн.
AUIRF1010EZS auirf1010ez.pdf?fileId=5546d462533600a4015355a891b01360
AUIRF1010EZS
Виробник: Infineon Technologies
Description: MOSFET N-CH 60V 75A D2PAK
Packaging: Tube
Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 75A (Tc)
Rds On (Max) @ Id, Vgs: 8.5mOhm @ 51A, 10V
Power Dissipation (Max): 140W (Tc)
Vgs(th) (Max) @ Id: 4V @ 250µA
Supplier Device Package: PG-TO263-3
Grade: Automotive
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 60 V
Gate Charge (Qg) (Max) @ Vgs: 86 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 2810 pF @ 25 V
Qualification: AEC-Q101
товару немає в наявності
В кошику  од. на суму  грн.
CY7C1041CV33-15ZXC CY7C1041CV33%20RevH.pdf
CY7C1041CV33-15ZXC
Виробник: Infineon Technologies
Description: IC SRAM 4MBIT PARALLEL 44TSOP II
Packaging: Bag
Package / Case: 44-TSOP (0.400", 10.16mm Width)
Mounting Type: Surface Mount
Memory Size: 4Mbit
Memory Type: Volatile
Operating Temperature: 0°C ~ 70°C (TA)
Voltage - Supply: 3V ~ 3.6V
Technology: SRAM - Asynchronous
Memory Format: SRAM
Supplier Device Package: 44-TSOP II
Write Cycle Time - Word, Page: 15ns
Memory Interface: Parallel
Access Time: 15 ns
Memory Organization: 256K x 16
DigiKey Programmable: Not Verified
товару немає в наявності
В кошику  од. на суму  грн.
PBL38640/2SOA PBL38640%2C2.pdf
PBL38640/2SOA
Виробник: Infineon Technologies
Description: IC TELECOM INTERFACE PDSO-24
Packaging: Tape & Reel (TR)
Package / Case: 24-SOIC (0.295", 7.50mm Width)
Mounting Type: Surface Mount
Function: Subscriber Line Interface Concept (SLIC)
Operating Temperature: -40°C ~ 85°C
Voltage - Supply: 5V
Current - Supply: 2.8mA
Supplier Device Package: PG-DSO-24-8
Number of Circuits: 1
Power (Watts): 730 mW
товару немає в наявності
В кошику  од. на суму  грн.
ESD118B1W01005E6327XTSA1
Виробник: Infineon Technologies
Description: TVS DIODES
Packaging: Tray
товару немає в наявності
В кошику  од. на суму  грн.
S25HS02GTDPBHB050
S25HS02GTDPBHB050
Виробник: Infineon Technologies
Description: IC FLASH 2GBIT SPI/QUAD 24BGA
Packaging: Tray
Package / Case: 24-TBGA
Mounting Type: Surface Mount
Memory Size: 2Gbit
Memory Type: Non-Volatile
Operating Temperature: -40°C ~ 105°C (TA)
Voltage - Supply: 1.7V ~ 2V
Technology: FLASH - NOR (SLC)
Clock Frequency: 133 MHz
Memory Format: FLASH
Supplier Device Package: 24-BGA (8x6)
Write Cycle Time - Word, Page: 1.7ms
Memory Interface: SPI - Quad I/O, QPI
Access Time: 6 ns
Memory Organization: 256M x 8
DigiKey Programmable: Not Verified
товару немає в наявності
В кошику  од. на суму  грн.
CYW89342CRFB4G
Виробник: Infineon Technologies
Description: IC RF TXRX+MCU BLE 248FCFBGA
Packaging: Tray
Package / Case: 248-BGA, FCBGA
Mounting Type: Surface Mount
Type: TxRx + MCU
Supplier Device Package: 248-FCFBGA (13x13)
RF Family/Standard: Bluetooth, WiFi
товару немає в наявності
В кошику  од. на суму  грн.
IRLML2803TR IRLML2803.pdf
IRLML2803TR
Виробник: Infineon Technologies
Description: MOSFET N-CH 30V 1.2A SOT-23
Packaging: Cut Tape (CT)
Package / Case: TO-236-3, SC-59, SOT-23-3
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 155°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 1.2A (Ta)
Rds On (Max) @ Id, Vgs: 250mOhm @ 910mA, 10V
Power Dissipation (Max): 540mW (Ta)
Vgs(th) (Max) @ Id: 1V @ 250µA
Supplier Device Package: SOT-23-3 (TO-236)
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 30 V
Gate Charge (Qg) (Max) @ Vgs: 5 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 85 pF @ 25 V
товару немає в наявності
В кошику  од. на суму  грн.
PSB3427RGTR
PSB3427RGTR
Виробник: Infineon Technologies
Description: LANTIQ PSB3427 TELECOMS IC
Packaging: Bulk
на замовлення 4961 шт:
термін постачання 21-31 дні (днів)
Кількість Ціна
108+199.70 грн
Мінімальне замовлення: 108
В кошику  од. на суму  грн.
CYT3BBBCEBQ1BZEGST Infineon-TRAVEO_T2G_CYT3BB_4BB-DataSheet-v09_00-EN.pdf?fileId=5546d4627883d7e00178a73ba6ad1732
CYT3BBBCEBQ1BZEGST
Виробник: Infineon Technologies
Description: TRAVEO-2 BODY HIGH-END
Packaging: Tape & Reel (TR)
Package / Case: 272-LFBGA
Mounting Type: Surface Mount
Speed: 100MHz, 250MHz
Program Memory Size: 4.0625MB (4.0625M x 8)
RAM Size: 768K x 8
Operating Temperature: -40°C ~ 125°C (TA)
Oscillator Type: External, Internal
Program Memory Type: FLASH
EEPROM Size: 256K x 8
Core Processor: ARM® Cortex®-M0+, ARM® Cortex®-M7F
Data Converters: A/D 72x12b SAR
Core Size: 32-Bit Dual-Core
Voltage - Supply (Vcc/Vdd): 2.7V ~ 5.5V
Connectivity: CANbus, Ethernet, I2C, LINbus, eMMC/SD, SPI, UART/USART
Peripherals: Brown-out Detect/Reset, DMA, I2S, LVD, POR, PWM, WDT
Supplier Device Package: 272-BGA (16x16)
Grade: Automotive
Number of I/O: 207
Qualification: AEC-Q100
товару немає в наявності
В кошику  од. на суму  грн.
BGA8L1BN6E6327XTSA1 Infineon-App_Guide_Mobile_Communication-BC-v01_01-EN.pdf
BGA8L1BN6E6327XTSA1
Виробник: Infineon Technologies
Description: BGA8L1BN6 - SINGLE-BAND 3G/4G MM
Packaging: Bulk
на замовлення 975000 шт:
термін постачання 21-31 дні (днів)
Кількість Ціна
840+26.27 грн
Мінімальне замовлення: 840
В кошику  од. на суму  грн.
BGA777N7E6327XTSA1 Infineon-BGA777N7-DS-v03_01-en.pdf?fileId=db3a30433db6f09f013dcad25fd654d1
BGA777N7E6327XTSA1
Виробник: Infineon Technologies
Description: BGA777N7 - SINGLE-BAND UMTS LNA
Packaging: Bulk
на замовлення 30000 шт:
термін постачання 21-31 дні (днів)
Кількість Ціна
662+32.84 грн
Мінімальне замовлення: 662
В кошику  од. на суму  грн.
IRF8327STRPBF irf8327spbf.pdf?fileId=5546d462533600a40153560d40c41d65
IRF8327STRPBF
Виробник: Infineon Technologies
Description: MOSFET N-CH 30V 14A DIRECTFET
Packaging: Tape & Reel (TR)
Package / Case: DirectFET™ Isometric SQ
Mounting Type: Surface Mount
Operating Temperature: -40°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 14A (Ta), 60A (Tc)
Rds On (Max) @ Id, Vgs: 7.3mOhm @ 14A, 10V
Power Dissipation (Max): 2.2W (Ta), 42W (Tc)
Vgs(th) (Max) @ Id: 2.4V @ 25µA
Supplier Device Package: DIRECTFET™ SQ
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 30 V
Gate Charge (Qg) (Max) @ Vgs: 14 nC @ 4.5 V
Input Capacitance (Ciss) (Max) @ Vds: 1430 pF @ 15 V
товару немає в наявності
В кошику  од. на суму  грн.
IRLML5103TR IRLML5103.pdf
IRLML5103TR
Виробник: Infineon Technologies
Description: MOSFET P-CH 30V 760MA SOT-23
Packaging: Cut Tape (CT)
Package / Case: TO-236-3, SC-59, SOT-23-3
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 155°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: P-Channel
Current - Continuous Drain (Id) @ 25°C: 760mA (Ta)
Rds On (Max) @ Id, Vgs: 600mOhm @ 600mA, 10V
Power Dissipation (Max): 540mW (Ta)
Vgs(th) (Max) @ Id: 1V @ 250µA
Supplier Device Package: SOT-23-3 (TO-236)
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 30 V
Gate Charge (Qg) (Max) @ Vgs: 5.1 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 75 pF @ 25 V
товару немає в наявності
В кошику  од. на суму  грн.
IR2130JPBF ir2130.pdf?fileId=5546d462533600a4015355c8757d169a
IR2130JPBF
Виробник: Infineon Technologies
Description: IC GATE DRVR HALF-BRIDGE 44PLCC
Packaging: Bulk
Package / Case: 44-LCC (J-Lead), 32 Leads
Mounting Type: Surface Mount
Operating Temperature: -40°C ~ 150°C (TJ)
Voltage - Supply: 10V ~ 20V
Input Type: Inverting
High Side Voltage - Max (Bootstrap): 600 V
Supplier Device Package: 44-PLCC, 32 Leads (16.58x16.58)
Rise / Fall Time (Typ): 80ns, 35ns
Channel Type: 3-Phase
Driven Configuration: Half-Bridge
Number of Drivers: 6
Gate Type: IGBT, MOSFET (N-Channel)
Logic Voltage - VIL, VIH: 0.8V, 2.2V
Current - Peak Output (Source, Sink): 250mA, 500mA
DigiKey Programmable: Not Verified
на замовлення 41 шт:
термін постачання 21-31 дні (днів)
Кількість Ціна
33+638.99 грн
Мінімальне замовлення: 33
В кошику  од. на суму  грн.
IR2130JPBF ir2130.pdf?fileId=5546d462533600a4015355c8757d169a
IR2130JPBF
Виробник: Infineon Technologies
Description: IC GATE DRVR HALF-BRIDGE 44PLCC
Packaging: Tube
Package / Case: 44-LCC (J-Lead), 32 Leads
Mounting Type: Surface Mount
Operating Temperature: -40°C ~ 150°C (TJ)
Voltage - Supply: 10V ~ 20V
Input Type: Inverting
High Side Voltage - Max (Bootstrap): 600 V
Supplier Device Package: 44-PLCC, 32 Leads (16.58x16.58)
Rise / Fall Time (Typ): 80ns, 35ns
Channel Type: 3-Phase
Driven Configuration: Half-Bridge
Number of Drivers: 6
Gate Type: IGBT, MOSFET (N-Channel)
Logic Voltage - VIL, VIH: 0.8V, 2.2V
Current - Peak Output (Source, Sink): 250mA, 500mA
DigiKey Programmable: Not Verified
товару немає в наявності
В кошику  од. на суму  грн.
IR2130PBF description ir2130.pdf?fileId=5546d462533600a4015355c8757d169a
IR2130PBF
Виробник: Infineon Technologies
Description: IC GATE DRVR HALF-BRIDGE 28DIP
Packaging: Tube
Package / Case: 28-DIP (0.600", 15.24mm)
Mounting Type: Through Hole
Operating Temperature: -40°C ~ 150°C (TJ)
Voltage - Supply: 10V ~ 20V
Input Type: Inverting
High Side Voltage - Max (Bootstrap): 600 V
Supplier Device Package: 28-PDIP
Rise / Fall Time (Typ): 80ns, 35ns
Channel Type: 3-Phase
Driven Configuration: Half-Bridge
Number of Drivers: 6
Gate Type: IGBT, MOSFET (N-Channel)
Logic Voltage - VIL, VIH: 0.8V, 2.2V
Current - Peak Output (Source, Sink): 250mA, 500mA
DigiKey Programmable: Not Verified
на замовлення 27 шт:
термін постачання 21-31 дні (днів)
Кількість Ціна
1+1015.94 грн
13+756.48 грн
26+719.19 грн
В кошику  од. на суму  грн.
GS61004B-MR
GS61004B-MR
Виробник: Infineon Technologies
Description: GS61004B-MR
Packaging: Tape & Reel (TR)
Package / Case: 3-SMD, No Lead
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: GaNFET (Gallium Nitride)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 45A (Tc)
Rds On (Max) @ Id, Vgs: 20mOhm @ 13.5A, 6V
Vgs(th) (Max) @ Id: 1.3V @ 7mA
Drive Voltage (Max Rds On, Min Rds On): 6V
Vgs (Max): +7V, -10V
Drain to Source Voltage (Vdss): 100 V
Gate Charge (Qg) (Max) @ Vgs: 6.2 nC @ 6 V
Input Capacitance (Ciss) (Max) @ Vds: 295 pF @ 50 V
на замовлення 500 шт:
термін постачання 21-31 дні (днів)
Кількість Ціна
250+191.40 грн
500+172.00 грн
Мінімальне замовлення: 250
В кошику  од. на суму  грн.
GS61004B-MR
GS61004B-MR
Виробник: Infineon Technologies
Description: GS61004B-MR
Packaging: Cut Tape (CT)
Package / Case: 3-SMD, No Lead
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: GaNFET (Gallium Nitride)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 45A (Tc)
Rds On (Max) @ Id, Vgs: 20mOhm @ 13.5A, 6V
Vgs(th) (Max) @ Id: 1.3V @ 7mA
Drive Voltage (Max Rds On, Min Rds On): 6V
Vgs (Max): +7V, -10V
Drain to Source Voltage (Vdss): 100 V
Gate Charge (Qg) (Max) @ Vgs: 6.2 nC @ 6 V
Input Capacitance (Ciss) (Max) @ Vds: 295 pF @ 50 V
на замовлення 712 шт:
термін постачання 21-31 дні (днів)
Кількість Ціна
1+404.22 грн
10+259.76 грн
100+215.86 грн
В кошику  од. на суму  грн.
GS61008P-MR
GS61008P-MR
Виробник: Infineon Technologies
Description: GS61008P-MR
Packaging: Tape & Reel (TR)
Package / Case: 5-SMD, No Lead
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C
Technology: GaNFET (Gallium Nitride)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 90A (Tc)
Rds On (Max) @ Id, Vgs: 9.5mOhm @ 27A, 6V
Vgs(th) (Max) @ Id: 2.6V @ 7mA
Drive Voltage (Max Rds On, Min Rds On): 6V
Vgs (Max): +7V, -10V
Drain to Source Voltage (Vdss): 100 V
Gate Charge (Qg) (Max) @ Vgs: 8 nC @ 6 V
Input Capacitance (Ciss) (Max) @ Vds: 600 pF @ 50 V
на замовлення 1000 шт:
термін постачання 21-31 дні (днів)
Кількість Ціна
250+376.24 грн
500+343.99 грн
Мінімальне замовлення: 250
В кошику  од. на суму  грн.
GS61008P-MR
GS61008P-MR
Виробник: Infineon Technologies
Description: GS61008P-MR
Packaging: Cut Tape (CT)
Package / Case: 5-SMD, No Lead
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C
Technology: GaNFET (Gallium Nitride)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 90A (Tc)
Rds On (Max) @ Id, Vgs: 9.5mOhm @ 27A, 6V
Vgs(th) (Max) @ Id: 2.6V @ 7mA
Drive Voltage (Max Rds On, Min Rds On): 6V
Vgs (Max): +7V, -10V
Drain to Source Voltage (Vdss): 100 V
Gate Charge (Qg) (Max) @ Vgs: 8 nC @ 6 V
Input Capacitance (Ciss) (Max) @ Vds: 600 pF @ 50 V
на замовлення 1110 шт:
термін постачання 21-31 дні (днів)
Кількість Ціна
1+681.44 грн
10+449.83 грн
100+424.36 грн
В кошику  од. на суму  грн.
Обрати Сторінку:   [  << Попередня Сторінка ]  1 249 498 747 757 758 759 760 761 762 763 764 765 766 767 996 1245 1494 1743 1992 2241 2490 2494  [ Наступна Сторінка >> ]